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Silicon patents

      

This page is updated frequently with new Silicon-related patent applications.


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Built-in self test for loopback on communication system on chip
In an example, the present invention includes an integrated system-on-chip device. The device is configured on a single silicon substrate member.

Dense-comb redundant ring laser array
The disclosed embodiments relate to the design of a hybrid laser comprising a shared ring mirror coupled to a pair of buses by a 3 db coupler (also referred to as a “symmetric splitter”), which is described in more detail below. Each bus is also coupled to an array of ring filters, wherein each ring filter couples an associated reflective silicon optical amplifier (rsoa) to the shared ring mirror and in doing so forms a verniered ring pair with the shared ring mirror.

Multi-wavelength semiconductor lasers
Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (soi) substrate and a quantum dot (qd) layer above the soi substrate.

High capacity anode electrodes with mixed binders for energy storage devices
A silicon anode comprising a hybrid binder at a blending ratio of 10-90 wt. % for use in a li-ion battery is provided.

Organosilicon-containing electrolyte compositions having enhanced electrochemical and thermal stability
Described are electrolyte compositions and electrochemical devices containing the electrolyte compositions. The compositions include an organosilicon compound, an imide salt and optionally lipf6.

Lithium ion battery anode containing silicon nanowires grown in situ in pores of graphene foam and production process
A process for producing an anode layer, comprising: (a) dispersing catalyst metal-coated si particles, graphene sheets, and an optional blowing agent in a liquid medium to form a graphene/si dispersion; (b) dispensing and depositing the dispersion onto a supporting substrate to form a wet layer and removing the liquid medium from the wet layer to form a dried layer of graphene/si mixture material; and (c) exposing the dried layer to a high temperature environment, from 300° c. To 2,000° c., to induce volatile gas molecules from graphene sheets or to activate the blowing agent for producing the graphene foam and, concurrently, to enable a catalyst metal-catalyzed growth of multiple si nanowires emanated from si particles as a feed material in pores of the foam to form the anode layer; wherein the si nanowires have a diameter of 5-100 nm and a length-to-diameter aspect ratio of at least 5..

Negative active material for lithium secondary battery and lithium secondary battery including the same
A negative active material for a lithium secondary battery and a lithium secondary battery including the same are provided. The negative active material may be a silicon (si)-based alloy negative active material.

Electrode material and manufacturing the same
A method for manufacturing an electrode material includes preparing silicon oxide, reducing at least a portion of the silicon oxide to form a first composite including an aggregate in which silicon oxide particles and silicon particles are aggregated, selectively removing the silicon oxide particles of the first composite to form a second composite including an aggregate in which the silicon particles are aggregated, and forming a third composite by dry-mixing and cold-welding the second composite and a carbon material.. .

Stabilized lithium metal impressions coated with alloy-forming elements and production thereof

The invention relates to particulate lithium metal composite materials, stabilized by alloy-forming elements of the third and fourth primary group of the pse and method for production thereof by reaction of lithium metal with film-forming element precursors of the general formulas (i) or (ii): [ar1r2r3r4]lix (i), or r1r2r3a-o-ar4r5r6 (ii), wherein r1r2r3r4r5r6=alkyl (c1-c12), aryl, alkoxy, aryloxy-, or halogen (f, cl, br, i), independently of each other; or two groups r represent together a 1,2-diolate (1,2-ethandiolate, for example), a 1,2- or 1,3-dicarboxylate (oxalate or malonate, for example) or a 2-hydroxycarboxylate dianion (lactate or salicylate, for example); the groups r1 to r6 can comprise additional functional groups, such as alkoxy groups; a=boron, aluminum, gallium, indium, thallium, silicon, germanium, tin, lead; x=0 or 1 for b, al, ga, in, tl; x=0 for si, ge, sn, pb; in the case that x=0 and a=b, al, ga, in, tl, r4 is omitted, or with polymers comprising one or more of the elements b, al, ga, in, tl, si, ge, sn, pb, at temperatures between 50 and 300° c., pre ferably above the melting temperature of lithium of 180.5° c., in an organic, inert solvent.. .

Negative electrode active material for non-aqueous electrolyte secondary battery, non-aqueous electrolyte secondary battery, producing negative electrode material for non-aqueous secondary battery, and producing non-aqueous electrolyte secondary battery

A negative electrode active material for non-aqueous electrolyte secondary batteries which has particles of negative electrode active material, the particles of negative electrode active material containing a silicon compound (siox: 0.5≤x≤1.6) that contains a li compound, including a carbon coating on at least a part of a surface of the silicon compound and a salt coating containing one or more kinds of a metal silicate containing a metal element other than a lithium element and a metal salt containing a metal element other than the lithium element on a part of a surface of the silicon compound or a surface of the carbon coating or both of these. Thus, the negative electrode active material for non-aqueous electrolyte secondary batteries having high stability to an aqueous slurry, high capacity and excellent cycle characteristics and initial efficiency may be provided..

Transistor sidewall formation process

Processing methods may be performed to form a sidewall spacer on a semiconductor substrate. The methods may include laterally etching a first silicon-containing material relative to a second silicon-containing material.

Semiconductor device and electrical device

According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction.

Oled image display apparatus driven by silicon-based cmos and manufacturing method

An oled image display apparatus driven by a silicon-based cmos and a manufacturing method are disclosed, where the apparatus includes four same microdisplay units formed through exposure by using a same mask, where each microdisplay unit includes: a display controller, a row driver, a column driver, and a rectangular display effective area, where one of vertexes of each rectangular display effective area is close to each other to form one rectangular whole display effective area, and there is no electronic component between any two rectangular display effective areas. Through proper layout designing and exposure field splicing, the oled image display apparatus that is driven by a silicon-based cmos and that has a larger area is implemented..

High efficiency wide spectrum sensor

A method for fabricating an optical sensor includes: forming, over a substrate, a first material layer comprising a first alloy of germanium and silicon having a first germanium composition; forming, over the first material layer, a graded material layer comprising germanium and silicon; and forming, over the graded material layer, a second material layer comprising a second alloy of germanium and silicon having a second germanium composition. The first germanium composition is lower than the second germanium composition and a germanium composition of the graded material layer is between the first germanium composition and the second germanium composition and varies along a direction perpendicular to the substrate..

Production array substrate and array substrate

This disclosure provides a production method of an array substrate and an array substrate. The production method of this array substrate comprises: forming a polycrystalline silicon layer on a base, wherein the base comprises a first active area, a second active area, and a non-active area; forming an oxide semiconductor layer on the polycrystalline silicon layer; and forming a first active layer on the first active area and forming a second active layer on the second active area by using a single patterning process, wherein the first active layer is composed of the polycrystalline silicon layer, and the second active layer is composed of the oxide semiconductor layer and the polycrystalline silicon layer..

Array substrate, liquid crystal display, thin film transistor, and manufacturing array substrate

An array substrate according to the present invention is a tft substrate including a pixel tft and a drive tft on a substrate, where the pixel tft includes a first source electrode, a first drain electrode, and an amorphous silicon layer, and the drive tft includes a third oxide semiconductor layer provided on a gate insulating film while overlapping a second gate electrode in plan view, and a second source electrode and a second drain electrode overlapping the third oxide semiconductor layer in plan view, with a third separation portion separating the second source electrode and the second drain electrode from each other.. .

Semiconductor device having milti-height structure and manufacturing the same

A semiconductor device having semiconductor device having a multi-height structure is provided. The semiconductor device having a multi-height structure includes a silicon substrate.

Thermally enhanced fully molded fan-out module

A method of making a semiconductor device can include providing a temporary carrier with adhesive. A first semiconductor die and a second semiconductor die can be mounted face up to the temporary carrier such that back surfaces of the first semiconductor die and the second semiconductor die are depressed within the adhesive.

Semiconductor device and manufacturing the same

A semiconductor device includes a substrate; a laminate which is formed on one main surface side of the substrate, and includes an aluminum alloy wiring and an insulating film surrounding the aluminum alloy wiring; and a silicon nitride film covering the laminate, in which the silicon nitride film and the insulating film have an opening portion, through which the silicon nitride film and the insulating film, formed at a position overlapped with a bonding portion of the aluminum alloy wiring, and a deposition made of a residue caused by reverse sputtering, which contains silicon and nitrogen, adheres to a portion exposed from the opening portion of a surface of the aluminum alloy wiring, to form a film.. .

Semiconductor module comprising an encapsulating compound that covers at least one semiconductor component

A semiconductor module (10) contains a ceramic interconnect device (50) having at least one semiconductor component (20). The at least one semiconductor component (20) is covered by an encapsulating compound (30) which contains a cured inorganic cement and has a thermal expansion coefficient in the range of 2 to 10 ppm/k.

Replacement contact process

Processing methods may be performed to expose a contact region on a semiconductor substrate. The methods may include selectively removing a first region of a silicon material between source/drain regions of a semiconductor substrate to expose a first region of oxide material.

High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by he-n2 co-implantation

A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm and comprises a region of nitrogen-reacted nanovoids in the front surface region; a silicon dioxide layer on the surface of the semiconductor handle substrate; a dielectric layer in contact with the silicon dioxide layer; and a semiconductor device layer in contact with the dielectric layer..

Etching method

An etching method for a target object. The target object includes a main surface, grooves formed in the main surface, and an etching target film covering the main surface and surfaces of the grooves.

Semiconductor device and manufacturing method thereof

Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer..

Etching method

An etching method performed by an etching apparatus includes a first process of causing a first high-frequency power supply to output a first high-frequency power with a first frequency and causing a second high-frequency power supply to output a second high-frequency power with a second frequency lower than the first frequency in a cryogenic environment where the temperature of a wafer is −35° c. Or lower, to generate plasma from a hydrogen-containing gas and a fluorine-containing gas and to etch, with the plasma, a multi-layer film of silicon dioxide and silicon nitride and a single-layer film of silicon dioxide that are formed on the wafer; and a second process of stopping the output of the second high-frequency power supply.

Oxide film removing method, oxide film removing apparatus, contact forming method, and contact forming system

Disclosed is a method for removing, from a processing target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion of a bottom of the pattern. The method includes: removing the silicon-containing oxide film formed on the bottom of the pattern by ionic anisotropic plasma etching using plasma of a carbon-based gas; removing a remaining portion of the silicon-containing oxide film after the anisotropic plasma etching, by chemical etching; and removing a residue remaining after the chemical etching..

Method of quasi-atomic layer etching of silicon nitride

A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing h and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture.

Substantially defect-free polysilicon gate arrays

A single critical mask process flow and associated structure eliminate the formation of narrow polysilicon defects at the ends of polysilicon gate arrays, and obviate the need to implement complicated ground rules and post-design fill methods to avoid generation of the defects.. .

Film forming method

A film forming method for a target object including a main surface and grooves formed in the main surface, includes a step of supplying of a first gas into the processing chamber, and a step of supplying a second gas and a high frequency power for plasma generation into the processing chamber to generate in the processing chamber a plasma of a gas including the second gas in the processing chamber. The first gas contains an oxidizing agent that does not include a hydrogen atom.

Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide

Methods and apparatuses for selectively depositing silicon-containing dielectric or metal-containing dielectric material on silicon or metal surfaces selective to silicon oxide or silicon nitride materials are provided herein. Methods involve exposing the substrate to an acyl chloride which is reactive with the silicon oxide or silicon nitride material where deposition is not desired to form a ketone structure that blocks deposition on the silicon oxide or silicon nitride material.

Selective deposition of silicon nitride on silicon oxide using catalytic control

It will be understood that in some embodiments, nitrogen-containing ligands bonded to the silicon may not necessarily be identical to another nitrogen-containing ligand bonded to the same silicon atom. For example, in some embodiments, r1 and r2 may be different alkyl ligands.

Silicon dioxide solar cell

A silicon dioxide solar cell includes first and second substrates having electrical conductivity, the first and second substrates being arranged so that conductive surfaces of the first and second substrates are facing each other, the first substrate being a transparent substrate on a light incident side to which a light is irradiated; a silicon dioxide layer consisting essentially of silicon dioxide particles which is formed on an electrode disposed on the second substrate such that the silicon dioxide layer has a photovoltaic ability absorbing an infrared light; and an electrolyte disposed between said first and second substrate. The space between the silicon dioxide layer and the first substrate on the light incident side is filled with the electrolyte, and the silicon dioxide solar cell is configured to generate electricity from the silicon dioxide particles of the silicon dioxide layer and output the electricity via the electrode..

Hybrid mems-floating gate device

A hybrid micro-electro-mechanical-system-floating-gate (mems-fg) device includes an electrically isolated non-volatile memory (floating) structure including a polysilicon gate structure connected by a metal via to a fixed electrode, where the polysilicon gate structure also forms the gate of an nvm cell, and the fixed electrode forms part of a lever-type or membrane-type ohmic mems switch. An initial charge is written before each sensing operation onto the floating structure by way of the nvm cell.

Photomask blank

A photomask blank has on a transparent substrate, an optional first film, a second film, a third film, and a fourth film. The first and third films are formed of silicon-containing materials which are resistant to chlorine base dry etching and removable by fluorine base dry etching.

Halftone phase shift photomask blank

A halftone phase shift photomask blank has on a transparent substrate, a first film serving as a halftone phase shift film, a second film serving as a light shielding film, a third film serving as a hard mask film, and a fourth film. The first and third films are formed of silicon-containing materials which are resistant to chlorine base dry etching and removable by fluorine base dry etching.

Mask blank, transfer mask, manufacturing transfer mask and manufacturing semiconductor device

A mask blank comprising an etching stopper film. The mask blank comprises a thin film for pattern formation on a main surface of a transparent substrate, and is featured in that: the thin film for pattern formation contains silicon, an etching stopper film is provided between the transparent substrate and the thin film for pattern formation, and the etching stopper film contains silicon, aluminum, and oxygen..

Photonic interface for electronic circuit

A photonic interface for an electronic circuit is disclosed. The photonic interface includes a photonic integrated circuit having a modulator and a photodetector, and an optical fiber or fibers for optical communication with another optical circuit.

Method for producing semiconductor device

A semiconductor device and a method for producing a semiconductor device are disclosed. The semiconductor device includes a first silicon layer; a first dielectric layer, located on the first silicon layer, where the first dielectric layer includes a window, and a bottom horizontal size of the window of the first dielectric layer is not greater than 20 nm; and a iii-v semiconductor layer, located on the first dielectric layer and in the window of the first dielectric layer, and connected to the first silicon layer in the window of the first dielectric layer.

Antireflective optical member and producing antireflective optical member

There is provided an optical member including a porous layer on a substrate, wherein the porous layer contains silicon oxide particles, a silicon oxide binder, and a fluorine compound having a fluorocarbon group and a nonionic hydrophilic group, and the amount of the fluorine compound is 0.1% by mass or more and 2.5% by mass or less with respect to the silicon oxide.. .

Systems and methods for improved waste gas abatement

The present disclosure generally relates to systems and methods for the combustive abatement of waste gas formed during the manufacture of semiconductor wafers. In particular, the systems described herein are capable of combusting air-polluting perfluorocarbons, including those having high greenhouse gas indexes such as hexafluoroethane (c2f6) and tetrafluoromethane (cf4), as well as particulate-forming silicon dioxide precursors, such as silane (sih4) and tetraethoxysilane (si(oc2h5)4, abbreviated teos), with greater efficiency and lower energy usage than prior abatement systems.

Textile optics - solution for robust flexible light treatment pads

An assembly constructed according to the method is also provided. This assembly is particularly suited to being disposed against skin due to the high biocompatibility of silicone, particularly pdms..

Heat dissipation device for led lamp

Heat dissipation devices for a light emitting diode (led) lamp are presented including: a base; a number of heat conducting fins vertically stacked and mechanically coupled with the base, where the heat conducting fins radiate outward from the base; and an led module mechanically coupled with the base. In some embodiments, the base further includes a thermal conductive grease for maximizing heat transfer between the base on the led socket.

Heat dissipation device for led lamp

Heat dissipation devices for a light emitting diode (led) lamp are presented including: a base; a number of heat conducting fins vertically stacked and mechanically coupled with the base, where the heat conducting fins radiate outward from the base; and an led module mechanically coupled with the base. In some embodiments, the base further includes a thermal conductive grease for maximizing heat transfer between the base on the led socket.

Heat dissipation device for led lamp

Heat dissipation devices for a light emitting diode (led) lamp are presented including: a base; a number of heat conducting fins vertically stacked and mechanically coupled with the base, where the heat conducting fins radiate outward from the base; and an led module mechanically coupled with the base. In some embodiments, the base further includes a thermal conductive grease for maximizing heat transfer between the base on the led socket.

Low-temperature selective epitaxial growth of silicon for device integration

An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees celsius.

Thermal chemical vapor deposition coating

Thermal chemical vapor deposition coated articles and thermal chemical vapor deposition processes are disclosed. The thermal chemical vapor deposition coated article includes a substrate and a coating on the substrate, the coating having multiple layers and being positioned on regions of the thermal chemical vapor deposition coated article that are unable to be concurrently coated through line-of-sight techniques.

Rapid methods for the extraction of nucleic acids from biological samples

The invention is directed to compositions and methods for rapidly and efficiently extracting nucleic acids and/or targeted nucleic acids sequences from biological samples. The methods of the invention comprise combining the sample with a buffer and magnetic silicon beads and concentrating the beads with a magnet or other electrical field.

Film for plastic restoration, surface-protected article, and process for producing film for plastic restoration

Provided is a film for plastic restoration with which transparency of plastic having reduced transparency can be easily recovered. The film for plastic restoration has base material film formed of thermoplastic polyurethane; and adhesive layer formed on a first surface side of base material film.

Polishing composition

A polishing composition used for polishing an object to be polished containing oxygen atoms and silicon atoms, the polishing composition including: abrasive grains a having an average primary particle size of 3 nm or more and 8 nm or less; abrasive grains b having an average primary particle size of more than 8 nm; and a dispersing medium, wherein a content of the abrasive grains b in the polishing composition is larger than a content of the abrasive grains a in the polishing composition, average silanol group density of the abrasive grains a and the abrasive grains b is 2.0 nm−2 or less, and an aspect ratio of the abrasive grains b is more than 1.3 and 2.0 or less.. .

Silicone coating composition containing surface sheen modifier

There is provided herein an opaque one-part room temperature vulcanizing silicone polymer composition comprising: (a) a silanol-terminated diorganopolysiloxane, (b) an opaque reinforcing filler; (c) a polyalkoxysilane crosslinking agent; (d) a condensation cure catalyst; (e) an organo-functional alkoxy silane adhesion promoter; and, (f) a cyclic siloxane. There is also provided a method for the continuous production of such a silicone polymer composition, and a paint containing such a silicone polymer composition..

Aqueous ink, ink cartridge and ink jet recording method

To provide an aqueous ink that can suppress the dissolution of silicon or a silicon compound contained in a recording head, can be stably, continuously ejected for a long time, and enables the recording of an image having excellent glossiness. An aqueous ink for ink jet includes a pigment, a resin dispersant for dispersing the pigment, an alkanolamine and a urethane resin.

Porous silicon oxide beads for use as drying agents for waterborne latex paint compositions

A highway marking paint is provided formed from a waterborne latex paint and porous silica beads having a pore volume in the range of 0.3 cc/g to 3.0 cc/g. The silica beads enable the paint to achieve sufficient viscosity to permit the application of a highway marking of at least 40 mil and preferably at least 120 mil.

Polyester polymer compositions

A fiber reinforced polyester polymer composition is disclosed that contains at least one tribological modifier. The tribological modifier may comprise an ultra-high molecular weight silicone alone or in combination with polytetrafluoroethylene particles.

Cross-linkable silicone compositions for producing highly transparent molded parts by means of ballistic methods

Complex shaped bodies of silicone are produced by ballistic 3d dod printing by employing a silicone resin-based composition curable by hydrosilylation, which exhibits a high shear thinning behavior and a rapid viscosity recovery rate alter removal of shear.. .

Curing polyurethanes

The present invention relates to methods for curing alkenyl ether groups-containing polyurethanes with moisture-reactive end groups by means of a two-stage curing process. The invention further relates to alkenyl ether group-containing polyurethanes with silicon-containing end groups as well as to the cured polymers which can be obtained by means of the method according to the invention and to the products containing them..

Residual stress free joined silicon carbide ceramics and processing the same

The present invention relates to joined silicon carbide (sic) ceramics and a method for processing the same. And, most particularly, the joined silicon carbide (sic) ceramics and the method for processing the same provide a method for processing joined silicon carbide (sic) ceramics including the steps of sintering silicon carbide substrates configuring the joined ceramics, processing a joined silicon carbide ceramics preparation by layering a non-sintered silicon carbide bond having a same composition as the silicon carbide substrate between at least two substrates selected from the sintered silicon carbide substrates, and processing the joined silicon carbide ceramics by performing heat treatment on the joined silicon carbide ceramics preparation.

Method of producing a body comprising porous alpha silicon carbide and the body produced by the method

The present invention relates to a method of producing porous alpha-sic containing shaped body and porous alpha-sic containing shaped body produced by that method. The porous alpha-sic containing shaped body shows a characteristic microstructure providing a high degree of mechanical stability..

Display window and manufacturing method thereof

According to an exemplary embodiment of the present disclosure, a method of manufacturing a display window includes preparing a mother substrate, performing a salt treatment on the mother substrate to form a silicon-rich layer in a surface of the mother substrate to a first depth from the surface of the mother substrate, and removing the silicon-rich layer, wherein the first depth is greater than a depth of any cracks in the surface of the mother substrate, and a ratio of silicon content in the silicon-rich layer to a silicon content in the mother substrate is 1.2 to 1.4.. .

Li-containing silicon oxide powder and production method thereof

There is produced a li-containing silicon oxide powder containing a crystallized lithium silicate that is mostly water-insoluble li2si2o5 and containing little crystalline si. This object is attained through the mixing of a lower silicon oxide powder represented by a compositional formula siox (0.5<x<1.5) with a powdered lithium source that involves grinding of the powdered lithium source; controlling a median diameter d1 of the lower silicon oxide powder and a median diameter d2 of the powdered lithium source so as to fulfill 0.05≤d2/d1≤2; and calcining the mixed powder at 300° c.

Preparation of cross-linked aerogels and derivatives thereof

Three-dimensional nanoporous aerogels and suitable preparation methods are provided. Nanoporous aerogels may include a carbide material such as a silicon carbide, a metal carbide, or a metalloid carbide.

Manufacturing a micromechanical device including an oblique surface and corresponding micromechanical device

A method for manufacturing a micromechanical device includes providing a silicon substrate having a front side and a rear side, where a first normal of the front side deviates by a first angle from the <111> direction of the silicon substrate; forming in the front side first and second trenches that are spaced apart from and essentially parallel to each other, with the first and second trenches extending along a direction of the deviation; forming on the front side a first etching mask that covers the front side except for a first opening area between the first and second trenches; and anisotropically etching the front side using the etching mask, thereby forming in the opening area an oblique surface having a second angle to the first normal, which approximately corresponds to the first angle.. .

Optical electronics device

An optical electronics device includes first, second and third wafers. The first wafer has a semiconductor substrate with a dielectric layer on a side of the semiconductor substrate.

Mems cavity with non-contaminating seal

A semiconductor device includes a first silicon layer disposed between second and third silicon layers and separated therefrom by respective first and second oxide layers. A cavity within the first silicon layer is bounded by interior surfaces of the second and third silicon layers, and a passageway extends through the second silicon layer to enable material removal from within the semiconductor device to form the cavity.

Flexible electronics for wearable healthcare sensors

Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an adhesive layer on the top side of the structure.

Multilayer articles comprising a release surface and methods thereof

Described herein is multilayer article made by the process comprising: delivering particles comprising a silicon compound from at least one fluid jet to a metal surface to embed the metal surface with the silicon compound to form a silicon compound layer; coating the silicon compound layer with an aqueous fluoropolymer dispersion to form a fluoropolymer layer and thereby forming a multilayered article, wherein the aqueous fluoropolymer dispersion comprises (i) a modifying agent; and (ii) a fluorinated polymer, wherein the fluorinated polymer comprises at least one of (a) a partially fluorinated polymer capable of forming a carbon-carbon double bond, (b) a functionalized fluorinated polymer, and (c) combinations thereof; and sintering the multilayered article to form the release surface coated substrate.. .

Buffer material, buffer material for coating robot, robot with buffer material, and coating robot with buffer material

A buffer material including a skinned polyurethane foam including a foam layer and a skin layer formed on the surface of the foam layer, wherein the skinned polyurethane foam essentially contains no silicone compound, the foam layer is polyurethane foam, the skin layer is a polyurethane resin layer produced by reaction of a skin-isocyanate component containing an aliphatic and/or an alicyclic polyisocyanate with a skin-active hydrogen group-containing component, the skin layer has a storage modulus at 23° c. (e′coat) of 1×107 pa or more and 3×108 pa or less, the foam layer has a storage modulus at 23° c.

Adhesive article

Provided are adhesive articles and related methods that use a foam layer including an acrylic polymer or silicone polymer and having a pair of opposing major surfaces. An adhesive surface is disposed on each of the opposing major surfaces and a plurality of channels extend across at least one adhesive surface.

Silicone-containing roof assemblies and methods for production and use

An underlayment material has a fiber mat partially infused and/or coated with asphalt and coated with silicone coating. A selvedge edge, may be coated or uncoated.

Method for manufacturing an integrated member and an integrated member

A method for manufacturing an integrated member and an integrated member manufactured by the method which can improve the joining strength and reduce the manufacturing cost. A method for manufacturing an integrated member by welding a first member formed of aluminum alloy material and a second member formed of ferrous-based material characterized in that the first member contains a predetermined amount of silicon and has a thickness larger than that of the second member.

Thin cast strip product with microalloy additions, and making the same

A steel product or thin steel cast strip comprised of, by weight, less than 0.25% carbon, between 0.20 and 2.0% manganese, between 0.05 and 0.50% silicon, aluminum 0.008% or less by weight, and at least one element selected from the group consisting of titanium between about 0.01% and about 0.20%, niobium between about 0.01% and about 0.20%, molybdenum between about 0.05% and about 0.50%, and vanadium between about 0.01% and about 0.20%, and having a microstructure comprised of a majority bainite, and further comprising fine oxide particles of silicon and iron distributed through the steel microstructure having an average precipitate size less than 50 nanometers. The steel product or thin cast steel strip may have a yield strength of at least 55 ksi (380 mpa) or a tensile strength of at least 500 mpa, or both.

Transdermal delivery system

Described is a transdermal device comprising a backing layer; a single layer adhesive matrix comprising buprenorphine or a salt thereof, a pressure sensitive adhesive including a silicone-type adhesive blended with an acrylate-type adhesive, a solubilizer, a permeation enhancer, and a crystallization inhibitor; and a release layer. Also described is a method of relieving pain and a method of preparing a transdermal delivery system..

Method of treating hair with a concentrated conditioner

A method of treating the hair including providing a concentrated hair care composition in an aerosol foam dispenser. The concentrated hair care composition includes one or more silicones, perfume, and less than 10% high melting point fatty compounds.

Hair care regimen using liquid concentrated conditioner

A method of treating the hair including applying to the hair a shampoo composition, rinsing the shampoo composition from the hair, applying to the hair a concentrated conditioner composition, and rinsing the concentrated conditioner composition from the hair. The shampoo composition includes an anionic surfactant, one or more amphoteric, non-ionic, or zwitterionic co-surfactants, and less than 0.25% of one or more shampoo high melting point fatty compounds.

Method of treating hair with a concentrated conditioner

Described herein is a method of treating the hair including providing a concentrated hair care composition in an aerosol foam dispenser. The concentrated hair care composition includes one or more silicones, perfume, stearyl alcohol, and cetyl alcohol.

Facial puff

A facial puff includes a silicon rubber puff body, an external wrapping layer having waterproof, thin and flexible characteristics and wrapped about the silicon rubber puff body using vacuum packaging technology, and a printing design or ornamental sheet carrying a text, markings, drawings and/or patterns and disposed between the silicon rubber puff body and the external wrapping layer.. .

Antiviral film

Provided is an antiviral film which is excellent in antiviral properties. The antiviral film includes a silicon-containing compound, in which a ph of a film surface is lower than or equal to 6.

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Hoya Corporation

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Telecommunications enclosure with cable seal

A telecommunications enclosure is provided with reliable sealing around cables entering therein. The enclosure includes one or more cable ports with cable seals made from a material that includes an oil-bleed silicone rubber.
Commscope Technologies Llc

Electrolyte material having a nasicon structure for solid-state sodium ion batteries and the production thereof

A method for preparing electrolyte material having a nasicon structure, based on a na3+xscxzr2−x(sio4)2(po4) compound where 0≤x<2. The method includes providing an acidic, aqueous solution which, according to a desired stoichiometry, comprises sodium, scandium and zirconium in the form of water-soluble nitrates, acetates or carbonates, and soluble silicates or orthosilicic acids or organic silicon compounds in dissolved form; subsequently adding phosphoric acid or ammonium dihydrogenphosphate or other soluble phosphates, according to the desired stoichiometry, complex zirconium dioxide phosphates forming as colloidal precipitations; and subsequently drying and calcining the mixture..
Forschungszentrum Juelich Gmbh

Production negative electrode active material for nonaqueous electrolyte secondary battery, production nonaqueous electrolyte secondary battery, production negative electrode for nonaqueous electrolyte secondary battery, and nonaqueous electrolyte secondary battery

A production method of a negative electrode active material containing a silicon compound (siox: 0.5≤x≤1.6) that contains lithium includes: making a silicon compound into which the lithium has been inserted contact with a solution b containing a polycyclic aromatic compound or a derivative thereof or both thereof (here, the solution b contains one or more kinds selected from an ether-based solvent, a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, and an amine-based solvent as a solvent); and making the silicon compound contact with a solution c (here, the solution c contains one or more kinds selected from an ether-based material, a ketone-based material, and an ester-based material as the solvent, and contains a compound having a quinoid structure in a molecule as a solute).. .
Mitsui Chemicals, Inc.

Methods of forming and using materials containing silicon and nitrogen

Some embodiments include methods utilizing atomic layer deposition to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses sii4 as one precursor and uses a nitrogen-containing material as another precursor.
Micron Technology, Inc.

Systems and methods for preparing gan and related materials for micro assembly

The disclosed technology relates generally to a method and system for micro assembling gan materials and devices to form displays and lighting components that use arrays of small leds and high-power, high-voltage, and or high frequency transistors and diodes. Gan materials and devices can be formed from epitaxy on sapphire, silicon carbide, gallium nitride, aluminum nitride, or silicon substrates.
X-celeprint Limited

Method for manufacturing crystalline silicon-based solar cell and manufacturing crystalline silicon-based solar cell module

A method for manufacturing a crystalline silicon-based solar cell includes forming a first intrinsic silicon-based thin-film on a first principal surface and a lateral surface of an n-type crystalline silicon substrate, forming a p-type silicon-based thin-film on the first intrinsic silicon-based thin-film, forming a first transparent electrode layer on an entire region of the first principal surface except for a peripheral portion, forming a second intrinsic silicon-based thin-film on a second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming an n-type silicon-based thin-film on the second intrinsic silicon-based thin-film, forming a second transparent electrode layer on an entire region of the second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming a patterned collecting electrode on the first transparent electrode layer, and forming a plated metal electrode on the second transparent electrode layer by an electroplating method.. .
Kaneka Corporation

Silicon carbide semiconductor device

A mesa type p-n junction diode silicon carbide semiconductor device that includes a first silicon carbide semiconductor substrate, a first drift layer formed on the silicon carbide semiconductor substrate, a second anode layer formed on the drift layer, a mesa structure having a flat mesa bottom portion formed in an outer periphery thereof and having a mesa side wall obliquely formed with respect to a top face of the anode layer in a cross-section ranging from the anode layer to the drift layer, a second lightly doped region formed from an edge of the anode layer to the mesa bottom portion, and a second highly doped region formed on the side of the mesa side wall in the lightly doped region in contact with the edge of the anode layer and in a portion connected to the mesa bottom portion at a lower part of the mesa side wall.. .
Mitsubishi Electric Corporation

Forming a fin using double trench epitaxy

The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a fin using double trench epitaxy. The fin may be composed of a iii-v semiconductor material and may be grown on a silicon, silicon germanium, or germanium substrate.
International Business Machines Corporation

High-electron-mobility transistors with counter-doped dopant diffusion barrier

Iii-v compound semiconductor devices, such transistors, may be formed in active regions of a iii-v semiconductor material disposed over a silicon substrate. A counter-doped portion of a iii-v semiconductor material provides a diffusion barrier retarding diffusion of silicon from the substrate into iii-v semiconductor material where it might otherwise behave as electrically active amphoteric contaminate in the iii-v material.
Intel Corporation

Silicon carbide substrate

A silicon carbide substrate whose majority carrier density is 1×1017 cm−3 or greater is such that a standard deviation of minority carrier lifetime as obtained by μ-pcd analysis is 0.7 ns or less in an area other than an area within a distance of 5 mm from an outer perimeter of a main surface.. .
Sumitomo Electric Industries ,ltd.

Silicon carbide substrate

A silicon carbide substrate includes a carbon-surface-side principal surface and a silicon-surface-side principal surface. The silicon carbide substrate has a diameter of 100 mm or greater and a thickness of 300 μm or greater.
Sumitomo Electric Industries, Ltd.

Forming nanosheet transistors with differing characteristics

A method of forming a transistor in an integrated circuit device can include forming a first and second nanosheet structure with alternating sheets of silicon and silicon germanium. A first and second transistor structure are constructed using the first and second nanosheet structures as first and second channels.
International Business Machines Corporation

Methods of doping fin structures of non-planar transistor devices

Methods and structures formed thereby are described relating to the doping non-planar fin structures. An embodiment of a structure includes a substrate, wherein the substrate comprises silicon, a fin on the substrate comprising a first portion and a second portion; and a dopant species, wherein the first portion comprises a first dopant species concentration, and the second portion comprises a second dopant species concentration, wherein the first dopant species concentration is substantially less than the second dopant species concentration..
Intel Corporation

Led light source comprising an electronic circuit

An electroluminescent light source including light-emitting diodes arranged on a substrate made of silicon. The light source integrates an electronic circuit performing a function that is necessary for controlling the light-emitting diodes..
Valeo Vision

Apparatus and wafer thinning in advanced packaging applications

A system and method are provided for etching semiconductor wafers (integrated circuit substrates) with advanced packaging using a two-step wet etching process. The first etch step uses an etchant that is non-selective to at least the wafer material (silicon) and metals, such as copper and titanium, that are present in the wafer.
Veeco Precision Surface Processing Llc

Semiconductor device and supporting ultra-thin semiconductor die

A first semiconductor substrate contains a first semiconductor material, such as silicon. A second semiconductor substrate containing a second semiconductor material, such as gallium nitride or aluminum gallium nitride, is formed on the first semiconductor substrate.
Semiconductor Components Industries, Llc

Method of encapsulating a substrate

A method of encapsulating a substrate is disclosed, in which the substrate has at least the following layers: a cmos device layer, a layer of first semiconductor material different to silicon, and a layer of second semiconductor material, the layer of first semiconductor material arranged intermediate the cmos device layer and the layer of second semiconductor material. The method comprises: (i) circumferentially removing a portion of the substrate at the edges; and (ii) depositing a dielectric material on the substrate to replace the portion removed at step (i) for encapsulating at least the cmos device layer and the layer of first semiconductor material.
Massachusetts Institute Of Technology

Charge-trap layer separation and word-line isolation in a 3-d nand structure

In a 3d nand device, the charge trap region of a memory cell is formed as a separate charge-trap “island.” as a result, the charge-trap region of one memory cell is electrically isolated from charge-trap regions in adjacent memory cells. The charge trap region of one memory cell is separated from the charge trap regions of adjacent memory cells by a dielectric structure, such as a silicon oxide film.
Applied Materials, Inc.

Method for manufacturing semiconductor device and manufacturing same

A method for manufacturing a semiconductor device includes introducing a group iii element to a part of a substrate containing silicon and carbon; introducing oxygen into the part of the substrate; and heating the substrate after introducing the group iii element and the oxygen.. .
Kabushiki Kaisha Toshiba

Surface treatment method and surface treatment liquid

To provide a surface treatment method capable of highly hydrophobizing (silylating) a surface of a treatment target while deterioration of polyvinyl chloride is suppressed when surface treatment of the treatment target such as an inorganic pattern and a resin pattern is carried out using a device having a liquid contact portion provided with a member made of polyvinyl chloride, and also provide a surface treatment liquid suitably used for the surface treatment method. A surface treatment liquid used for the surface treatment method includes a silylating agent (a) and a solvent (s), the silylating agent (a) does not have an alkoxy group bonded to a silicon atom, and the solvent (s) does not have a hydroxyl group bonded to a carbon atom.
Tokyo Ohka Kogyo Co., Ltd.

Secure code jump and execution gating

Systems, apparatuses, and methods for improving security of a silicon-based system by creating a glitch-resistant process for executing a software code block on the silicon-based system are disclosed. An example method may begin by marking the software code block as non-executable.
Google Llc

Silicon-containing underlayers

Wet-strippable underlayer compositions comprising one or more silicon-containing polymers comprising a backbone comprising si—o linkages, one or more organic blend polymers, and a cure catalyst are provided. These compositions are useful in the manufacture of various electronic devices..
Rohm And Haas Electronic Materials Llc

Transparent photosensitive resin

Wherein m, n are independently 1 to 600; x is a tetravalent organic group, and the main chain of x includes alicyclic structure; y is a divalent organic group, and the main chain of y includes siloxane structure; z is a divalent organic group, and the side chain of z includes phenolic hydroxyl group or carboxyl group. The filler include at least one of aluminium oxide, inorganic clay, mica powder, silicon dioxide, zinc oxide, and zirconium dioxide.

Polymerizable liquid crystal composition and optically anisotropic body formed from the same

The present invention provides a polymerizable cholesteric liquid crystal composition containing: one or two or more polymerizable liquid crystal compounds (i) having two or more polymerizable functional groups in the molecule; a chiral compound (iii); a polymerization initiator (iv); optionally a non-silicon compound (v) having a repeating unit; and optionally one or two or more polymerizable liquid crystal compounds (ii) having one polymerizable functional group. An optically anisotropic body formed from a polymerizable liquid crystal composition according to the present invention is also provided..
Dic Corporation

Methods and electroactive variable aperture lenses

This invention discloses methods and apparatus for providing a variable aperture insert into a lens. A liquid crystal layer may be used to provide a variable aperture function and in some examples.
Johnson & Johnson Vision Care, Inc.

Vibration damping mount

A mems sensor package includes a mems sensor fixed to a vibration damping mount. The mount includes a silicon substrate defining an outer frame; a moveable support to which the mems sensor is fixed; and a vibration damping structure connected between the outer frame and the moveable support to damp movement of the support.
Atlantic Inertial Systems Limited

Microfluidic chip-based, universal coagulation assay

A microfluidic, chip-based assay device has been developed for measuring physical properties of an analyte (particularly, whole blood or whole blood derivatives). The technologies can be applied to measure clotting times of whole blood or blood derivatives, determine the effects of anticoagulant drugs on the kinetics of clotting/coagulation, as well as evaluate the effect of anticoagulant reversal agents.
Persophere Technologies Inc.

Pressure sensor, pressure sensor module, electronic apparatus, and vehicle

A pressure sensor includes a substrate which has a diaphragm that is flexurally deformed by receiving a pressure, a side wall section which is placed on one surface side of the substrate and surrounds the diaphragm in a plan view, and a sealing layer which is placed so as to face the diaphragm through a space surrounded by the side wall section and seals the space, wherein the sealing layer includes a first silicon layer, a second silicon layer which is located on the opposite side to the substrate with respect to the first silicon layer, and a silicon oxide layer which is located between the first silicon layer and the second silicon layer, and the silicon oxide layer is sealed from the outside by being covered with the second silicon layer.. .
Seiko Epson Corporation

Turbine engines, engine structures, and methods of forming engine structures with improved interlayer bonding

Engine structures and methods of forming the engine structures are provided herein. In an embodiment, an engine structure includes a silicon-based ceramic-containing substrate having an in-tolerance surface and one or more barrier layers disposed on the in-tolerance surface of the ceramic-containing substrate.
Honeywell International Inc.

Method for manufacturing silicon carbide single crystal

The present invention provides a method of manufacturing by the sublimation-recrystallization method more accurately detecting a thermal state of a starting material in a crucible and enabling control of the growth conditions while manufacturing an sic single crystal. The method obtains the high frequency current to be supplied through the induction coil by a converter for converting ac current to dc current and an inverter means for converting the dc current output from the converter to a high frequency to obtain a high frequency current, obtains a grasp, in advance, of a relationship between a variation over time of a dc equivalent resistivity (dcv/dci), calculated from a dc voltage value (dcv) and dc current value (dci) converted by the converter at the time of growth of the silicon carbide single crystal, and a density of micropipes formed in the grown silicon carbide single crystal, and adjusts at least one of the dcv or dci at the converter based on the relationship of the dc equivalent resistivity and micropipe density grasped in advance..
Nippon Steel & Sumikin Materials Co., Ltd.

Vapor-phase deposition of germanium nanostructures on substrates using solid-phase germanium sources

A method of depositing germanium on one or more substrates is disclosed. The method includes placing a source of germanium and the substrate(s) in a vapor deposition system, and heating the source of germanium in the vapor deposition system at a temperature near, at or above a melting point of elemental germanium, while flowing an inert gas over the source of germanium towards the substrate(s) for a length of time sufficient to deposit the germanium onto the substrate(s).
Csub Auxiliary For Sponsored Programs Administration

Anti-coking iron spinel surface

An anti-coking surface having a thickness up to 15 microns comprising from 15 to 50 wt. % of mncr2o4; from 15 to 25 wt.
Nova Chemicals (international) S.a.

Etching gas composition for silicon compound, and etching method

Provided are an etching gas composition and an etching method which enable an object, such as a substrate to be etched, to be efficiently precision processed during thin film formation, and which enable efficient removal of an accumulated or adhered silicon-based compound, other than the object such as the substrate to be etched, by means of plasma etching. The etching gas composition is characterized by containing: (1) a fluorinated halogen compound represented by xf (x is cl, br or i) as a primary component; (2) f2; (3) a fluorinated halogen compound represented by xfn (x is cl, br or i, and n is an integer of 3 or higher); (4) hf; (5) o2; and (6) at least one type of halogen gas molecule selected from among cl2, br2 and i2..
Kanto Denka Kogyo Co., Ltd.

Waterproof sheet and waterproofing method including using same

A waterproof sheet which is for application to a site to be waterproofed in order to prevent rainwater infiltration thereinto and retard deteriorations which proceed with time, the waterproof sheet comprising: a base layer that comprises a silicone rubber composition reinforced with reinforcing fibers and that has physical properties including high strength; and a pressure-sensitive silicone adhesive layer that has been formed on one surface of the base layer and that has a low hardness and is highly tacky. The waterproof sheet provided by the present invention less breaks than conventional waterproof sheets because of the reinforcement layer, and can conform to cracks or dislocations occurring in the surfaces to which the waterproof sheet has been applied, due to the pressure-sensitive adhesive layer formed on one surface.
Shin-etsu Chemical Co., Ltd.

Heat-dissipating coating composition, heat-dissipating member, article

Provided is a heat-dissipating coating composition having capability of forming a coating film having a high heat-dissipating effect, and having capability of forming the coating film also excellent in heat resistance and uv resistance. The heat-dissipating coating composition of the present application contains a filler of an orthorhombic silicate mineral; and an acrylic resin and a curing agent.
Jnc Corporation

Method for producing a material containing a polymer

A method for producing a material, in which method the following products are incorporated so as to produce a mixture: a polymer; and particles including silicon and carbon. A feature of the method is that during the incorporation of the particles, the particles have an apparent density of more than 0.3 grams per cubic centimeter.
Nanomakers

Silicon polymer production method using non-transition-metal-catalyst hydrosilylation

The present invention relates to a silicon polymer production method using a non-transition-metal-catalyst method of hydrosilylation, and more specifically relates to a production method for a silicon polymer using a non-transition-metal-catalyst method of hydrosilylation, wherein an environmentally friendly silicon polymer is produced by using hydrosilylation using a non-transition metal as a catalyst, thereby avoiding the use of platinum, palladium and rhodium or other expensive platinum group catalysts and so achieving outstanding economic viability and making it possible to prevent residues of heavy metals.. .
Korea Advanced Institute Of Science And Technology

High-temperature resistant modified silicon-containing cyanate ester resin as well as preparation method and application thereof

The present invention relates to a high-temperature resistant modified silicon-containing cyanate ester resin as well as a preparation method and an application thereof. The preparation method comprises the following steps: adding a mixed solution of hydroxyl silicone oil, a silane coupling agent and an organic solvent into a mixed solution of a tetramethylammonium hydroxide aqueous solution and a polar solvent, performing hydrolytic polycondensation at a temperature of 5-40° c.
Suzhou Taihu Electric Advanced Material Co, Ltd.

Silicone-modified polyester coating

A silicone-modified polyester resin and methods for making the resin are described herein. The method includes production of a siliconized intermediate which is then esterified to give a silicone-modified polyester resin.
Valspar Sourcing, Inc.

Flexible foodstuff container with closure

A sealable container comprising: a base having a geometric shape; sides extending from the base and defining a mouth opposite the base, wherein cross-sections of the sides parallel to the base have a geometric shape; and a seal of the mouth comprising: a first zipper member and a second zipper member, wherein when the seal is closed to seal the mouth the first and second zipper members engage each other to make the seal and when the seal is open the first and second zipper members disengage to break the seal, wherein the base, sides and seal comprise silicone, wherein the base and at least a portion of the sides adjacent the base are of sufficient thickness and rigidity for the container to freely stand vertically on its base with the mouth at the top, and wherein the seal and at least a portion of the sides defining the mouth are sufficiently flexible to allow the seal and side portion to be deformed between open and closed mouth configurations.. .

Seam-sealed curtain airbag cushion

Provided is a seam-sealed curtain airbag cushion that makes a panel with a fabric to which a silicone coating liquid is applied and doubly couples a first panel and a second panel constituting the panel by means of a silicone sealant and a sewing yarn so as to maintain the internal pressure thereof for a period of time in the event of a side crush or vehicle overturning. The seam-sealed curtain airbag cushion has the improvements in the tensile strength and tearing strength and is not deteriorated in performance even under various external environments..
Dual Co., Ltd.

Method of making silicone containing contact lens with reduced amount of diluents

The present invention relates to a method of manufacturing a contact lens including the steps of: (i) adding reactive components to a mold, wherein the reactive components comprise (a) at least one hydroxy-containing silicone component having a weight average molecular weight from about 200 to about 15,000 g/mole and (b) at least one mono-ether terminated, mono-methacrylate terminated polyethylene glycol having a weight average molecular weight from about 200 to about 10,000 g/mole; (ii) curing the reactive components within the mold to form the contact lens; and (iii) removing the contact lens from said mold.. .
Johnson & Johnson Vision Care, Inc.

Manufacturing method and manufacturing silicone rubber molded body

A manufacturing method for a silicone rubber molded body that is to be used in an electrophotographic image forming apparatus includes a heating process of a precursor of a silicone rubber molded body. The heating process includes heating the precursor of a silicone rubber molded body and externally introducing an environmental gas and discharging the environmental gas to outside, to reduce an amount of a low molecular weight compound remaining in the precursor of a silicone rubber molded body..
Konica Minolta, Inc.

Methods for producing 8-membered oxygen ring zeolite and aei-type zeolite

To provide methods for efficiently producing an 8-membered oxygen ring zeolite and an aei-type zeolite at a low cost, with an organic structure-directing agent that is inexpensive and easily available industrially without using an expensive organic structure-directing agent, such as a cyclic quaternary ammonium salt. A method for producing an 8-membered oxygen ring zeolite, the method comprising mixing an aluminum atom raw material, a silicon atom raw material, an alkali-metal atom raw material, an organic structure-directing agent, and water with one another in order to prepare a raw material mixture, and producing an 8-membered oxygen ring zeolite from the raw material mixture by hydrothermal synthesis, the aluminum atom raw material including at least an aluminosilicate zeolite having a framework including a composite building unit d6r defined by international zeolite association (iza), the aluminosilicate zeolite having a framework density of 15 t/1000 Å3 or less, the silicon atom raw material including at least the aluminosilicate zeolite and a silicon atom raw material other than the aluminosilicate zeolite, the organic structure-directing agent including at least a quaternary ammonium salt including 5 to 11 carbon atoms per molecule..
Mitsubishi Chemical Corporation

Exhaust treatment catalysts with enhanced hydrothermal stability and low-temperature activity

A catalyst for treating fuel combustion exhaust, the catalyst comprising the following components: (i) an oxide support comprising silicon oxide, aluminum oxide, or combination of silicon and aluminum oxides; (ii) cerium oxide, zirconium oxide, or a combination of cerium and zirconium oxides in contact with said oxide support; and (iii) nanoparticles comprising elemental palladium or platinum in contact with at least component (ii), wherein said palladium or platinum is present in an amount of 0.1-4 wt. % by weight of the particles, and wherein surfaces of said nanoparticles of elemental palladium or palladium are exposed and accessible to said fuel combustion exhaust.
Ut-battelle, Llc

Hydrophobic sorbents for co2/h2o displacement desorption applications

The disclosure generally relates to ccs sorbents, particularly for co2/h2o displacement desorption process. The sorbent includes an aluminum oxide support and an alkali metal salt impregnated on the support, and a silicon modification of the sorbent to reduce water uptake by the sorbent and make it more hydrophobic.
Tda Research, Inc.

High internal phase water-in-oil type cosmetic composition

The present invention provides a high internal phase water-in-oil type cosmetic composition which shows colors by containing pearl particles or aqueous pigments in an internal phase. The present invention employs a particular kind of emulsifier forming large emulsification particles in order to allow the pearls or pigments to stably exist in an aqueous phase as an internal phase, and employs particular kinds of dispersant and preservative in order to supplement the emulsifying power for emulsion formation, prevent the separation of the formulation, and improve fluidity.
Amorepacific Corporation

Conditioning shampoo with ester mixtures of plant oils

Subject matter of the present disclosure is a conditioning shampoo containing (a) a mixture of the mono-, di- and tri-esters of a fatty acid mixture (f1) and glycerine, and (b) a mixture of the mono- and di-esters of a fatty acid mixture (f1) and a polyethylene glycol having a mean molecular mass of from about 200 to about 800 g/mol, wherein—the fatty acid mixture (f1) is a mixture of fatty acids which has the same fatty acid composition as a plant-based oil, and,—relative to the total weight of the shampoo,—the total quantity of all the plant-based oils included in the shampoo, which are not the same as the tri-esters of the fatty acid mixture (f1) and glycerine, is a value of maximum about 0.25 wt. %, and—the total quantity of all the silicone compounds included in the shampoo is a value of maximum about 0.25 wt.
Henkel Ag & Co. Kgaa

Tooth whitening oral care composition

The present invention provides an oral care system comprising (a) a first composition comprising: (i) a peroxide-containing whitening agent; and (ii) at least one silicone polymer, and (b) a second composition comprising a polymer selected from polysaccharides, acrylate polymers, acrylamide polymers, and a mixture of any two or more thereof; wherein the first composition and the second composition are maintained separately from one another. The present invention also provides a method of whitening teeth using the oral care system..
Colgate-palmolive Company

Hernia repair device and method

An improved inguinal hernia repair system is presented that is identical to the above except it does not contain the hydrophobic silicone component.. .

Blade insert illuminator

An air gap retractor illumination system includes any suitable retractor such as a mcculloch with a channel in the blade to accommodate an air gap illuminator. The illuminator is preferably made from a suitable light conducting plastic material such as acrylic or polycarbonate or silicone.
Invuity, Inc.

Ultimate rinse cup brush cleaning system

A set of molded silicone rubber devices is used for cleaning a variety of paint brushes in a variety of containers. A circular basic paint “puck” is molded silicone rubber with paint-cleaning teeth and a diameter matching the bottom of a standard coffee cup or else a standard disposable paint mixing cup of 8oz, 16oz, 32oz or 64oz.

Paint puck

A circular paint “puck” is molded silicone or rubber with a diameter matching the bottom of a standard coffee cup or else a standard disposable paint mixing cup of 8 oz, 16 oz, 32 oz or 64 oz. The puck is a disk featuring cleaning surfaces on the top side and, on the bottom, suction cups for securing the puck to the bottom of the cup and preventing its moving during brush cleaning.

Clothing having anion-emitting silicone patch attached thereto and manufacturing same

The present invention relates to clothing having an anion-emitting silicone patch attached thereto and a method for manufacturing same. The clothing having an anion-emitting silicone patch attached thereto according to the present invention comprises: clothing; and a silicone patch which is adhered to the clothing and emits anions, wherein the silicone patch comprises anion ore powder and is adhered to clothing by seamless welding at a temperature ranging from 170 to 180° c.
Enerskin Inc.

Remote plasma based deposition of graded or multi-layered silicon carbide film

Provided are methods and apparatuses for depositing a graded or multi-layered silicon carbide film using remote plasma. A graded or multi-layered silicon carbide film can be formed under process conditions that provide one or more organosilicon precursors onto a substrate in a reaction chamber.
Innovaplant Zierpflanzen Gmbh & Co. Kg

Nano-tube mosfet technology and devices

This invention discloses a semiconductor power device disposed in a semiconductor substrate and the semiconductor substrate has a plurality of trenches. Each of the trenches is filled with a plurality of epitaxial layers of alternating conductivity types constituting nano tubes functioning as conducting channels stacked as layers extending along a sidewall direction with a “gap filler” layer filling a merging-gap between the nano tubes disposed substantially at a center of each of the trenches.
Innovaplant Zierpflanzen Gmbh & Co. Kg

Shin-etsu Chemical Co., Ltd.

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Kuraray Co., Ltd.

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3-d stacking of active devices over passive devices

Single-die or multi-die packaged modules that incorporate three-dimensional integration of active devices with discrete passive devices to create a package structure that allows active devices (such as, silicon or gallium-arsenide devices) to share the same footprint area as an array of passive surface mount components. In one example, a module includes at least one active device stacked on top of an array of passive surface mount components on a substrate.
Skyworks Solutions, Inc.

Method and system for an optoelectronic built-in self-test system for silicon photonics optical transceivers

Methods and systems for an optoelectronic built-in self-test (bist) system for silicon photonics optical transceivers are disclosed and may include, in an optoelectronic transceiver having a transmit (tx) path and a receive (rx) path, where the rx path includes a main rx path and a bist loopback path: generating a pseudo-random bit sequence (prbs) signal, generating an optical signal in the tx path by applying the prbs signal to a modulator, communicating the optical signal to the bist loopback path and converting to an electrical signal utilizing a photodetector, the photodetector being a replica of a photodetector in the main rx path, and assessing the performance of the tx and rx paths by extracting a prbs signal from the electrical signal. The transceiver may be a single complementary-metal oxide semiconductor (cmos) die or in two cmos die, where a first comprises electronic devices and a second comprises optical devices..
Luxtera, Inc.

Active silicon optical bench

An integrated photonic module includes a semiconductor substrate configured to serve as an optical bench. Alternating layers of insulating and conducting materials are deposited on the substrate and patterned so as to define electrical connections.
Apple Inc.

Low-loss silicon on insulator based dielectric microstrip line

Systems and methods which provide low-loss dielectric microstrip line (dml) circuits for use with respect to signals in the terahertz frequency range are described. Low-loss dml integrated circuits of embodiments, such as may comprise dml transmission lines, dml couplers, dml crossovers, etc., may be based on silicon technology and are adapted for signal frequencies in the range of 750-925 ghz.
City University Of Hong Kong

Negative electrode for lithium ion secondary battery, lithium ion secondary battery comprising same, and producing negative electrode for lithium ion secondary battery

The present invention addresses the problem of providing: a negative electrode that is for a lithium ion secondary battery, that has high initial charge/discharge efficiency, and that has high energy density; a lithium ion secondary battery comprising the negative electrode for a lithium ion secondary battery; and a method for producing the negative electrode for a lithium ion battery that makes it possible to efficiently pre-dope an alkali earth metal or an alkali metal such as lithium. In order to solve this problem, this negative electrode for a lithium ion secondary battery comprises a negative electrode mixture layer containing at least: an alloy material (a) comprising tin or silicon capable of occluding lithium; carbon particles (b); an imide bond-containing polymer (c); and a polycyclic aromatic compound (d).
Shin-etsu Chemical Co., Ltd.

Silicon-carbon composite particulate material

The present invention relates to an electrochemically active si-carbon composite particulate material, wherein silicon nanoparticles are entrapped in a carbon matrix material based on at least micronic graphite particles, reduced graphene platelets and amorphous carbon.. .
Umicore

Method for preparing negative electrode of lithium ion battery and lithium ion battery

The present application provides a method for preparing negative electrode of lithium ion battery, wherein a negative electrode is obtained by plating a stannum-silicon composite layer and a stannum-carbon composite layer on the surface of a negative current collector. The negative electrode prepared according to the present application could solve the problem of large volume change during charge and discharge processes, so as to improve the cycle performance.
Optimum Battery Co., Ltd.

Process method using organic silicone resin photoconverter to bond-package led by tandem rolling

Provided is a process method for bond-packaging an led using an organic silicone resin photoconverter by tandem rolling, including the following continuous process flow: preparation of a semi-cured photoconversion sheet, pseudo-curing of the semi-cured photoconversion sheet, preparation of a flip chip led array sheet, forming of led package elements by dual-roller roll-bonding, curing of the led package elements, and cutting of the led package elements. The present invention has a significant advantage of bond-packaging an led by using a continuous rolling process, and can satisfy a condition requirement of bond-packaging an led using an organic silicone resin photoconverter, thereby improving the production efficiency and yield of led packages in industrialized batch production..
Jiangsu Cherrity Optronics Co., Ltd

Trench process and structure for backside contact solar cells with polysilicon doped regions

A solar cell includes polysilicon p-type and n-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the p-type doped region from the n-type doped region.
Sunpower Corporation

Rf device integrated on an engineered substrate

A substrate for rf devices includes a polycrystalline ceramic core and an interlayer structure. The interlayer structure includes a first silicon oxide layer coupled to the polycrystalline ceramic core, a polysilicon layer coupled to the first silicon oxide layer, a second silicon oxide layer coupled to the polysilicon layer, a barrier layer coupled to the second silicon oxide layer, a third silicon oxide layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the third silicon oxide layer..
Qromis, Inc.

Nitride semiconductor epitaxial stack structure and power device thereof

A nitride semiconductor epitaxial stack structure including: a silicon substrate; an aluminum-including nucleation layer disposed on the silicon substrate; a buffer structure disposed on the aluminum-including nucleation layer and sequentially including: a first superlattice epitaxial structure, a first gan based thick layer disposed on the first superlattice epitaxial structure, a second superlattice epitaxial structure disposed on the first gan based thick layer, and a second gan based thick layer disposed on the second superlattice epitaxial structure; a channel layer disposed on the buffer structure; a barrier layer disposed on the channel layer; and a two dimensional electron gas layer disposed near an interface between the channel layer and the barrier layer, wherein the total thickness of the first gan based thick layer and the second gan based thick layer is more than 2 micrometers.. .
Epistar Corporation

Silicon carbide/graphite composite and articles and assemblies comprising same

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (sio) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween.
Entegris, Inc.

Modulated super junction power mosfet devices

A semiconductor device—e.g., a super junction power mosfet—includes a number of columns of one type of dopant formed in a region of another type of dopant. Generally speaking, the columns are modulated in some manner.
Vishay-siliconix

Tunable on-chip nanosheet resistor

A method of forming an integrated circuit device having a nanosheet resistor includes forming a nanosheet structure having alternating sheets of silicon and silicon germanium. An ion implantation is performed on the nanosheet structure.
International Business Machines Corporation

Silicon-based oled image transceiving device and manufacture method thereof

A silicon-based oled image transceiving device includes a substrate, multiple photodiodes for sensing light, and multiple oleds for emitting light. The oled includes a metal interconnect anode, a hole transport layer, an organic light emitting layer, an electronic transport layer, and a transparent cathode layer.
Shenzhen Dianbond Technology Co., Ltd

Integration of silicon thin-film transistors and metal-oxide thin film transistors

This disclosure relates generally to the three-dimensional (3d) integrated thin-film transistors (tfts) with silicon and metal-oxide (mo) semiconductors as the active layers. In one or more embodiments, an apparatus is provided that comprises a first transistor comprising a silicon active layer, and a second transistor comprising a metal oxide active layer.
The Hong Kong University Of Science And Technology

Electro-optical and optoelectronic devices

The present invention is notably directed to an electro-optical device. The latter comprises a layer structure with: a silicon substrate; a buried oxide layer over the silicon substrate; a tapered silicon waveguide core over the buried oxide layer, the silicon waveguide core cladded by a first cladding structure; a bonding layer over the first cladding structure; and a stack of iii-v semiconductor gain materials on the bonding layer, the stack of iii-v semiconductor gain materials cladded by a second cladding structure.
International Business Machines Corporation

Fully-depleted silicon-on-insulator transistors

A fully-depleted silicon-on-insulator (fdsoi) semiconductor structure includes: a first pfet, a second pfet, and a third pfet each having a different threshold voltage and each being over an n-well that is biased to a first voltage; and a first nfet, a second nfet, and a third nfet each having a different threshold voltage and each being over a p-type substrate that is biased to a second voltage. The second voltage is different than the first voltage..
International Business Machines Corporation

Semiconductor memory device and manufacturing semiconductor memory device

According to an embodiment, a semiconductor memory device includes a pillar member, a plurality of insulating layers arranged on an outer peripheral surface of the pillar member, an electrode film arranged between the insulating layers adjacent in a height direction, and a second block insulating film arranged between the electrode film and the pillar member and between the electrode film and the insulating layers. The pillar member includes a first block insulating film, a memory film, and a channel semiconductor layer in order from a side at its outer peripheral surface.
Toshiba Memory Corporation

High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type iii-v semiconductor material and silicon germanium semiconductor material

An electrical device that includes at least one n-type field effect transistor including a channel region in a type iii-v semiconductor device, and at least one p-type field effect transistor including a channel region in a germanium containing semiconductor material. Each of the n-type and p-type semiconductor devices may include gate structures composed of material layers including work function adjusting materials selections, such as metal and doped dielectric layers.
International Business Machines Corporation

Semiconductor device and manufacturing method thereof

A semiconductor device includes a semiconductor substrate and a passive component. The passive component is formed on the semiconductor substrate and includes a first polysilicon (poly) layer, a salicide blockage (sab) layer and a first salicide layer.
Mediatek Inc.

Embedded multi-die interconnect bridge with improved power delivery

Integrated circuit packages with multiple integrated circuit dies are provided. A multichip package may include at least two integrated circuit dies that communicate using an embedded multi-die interconnect bridge (emib) in a substrate of the multi-chip package.
Intel Corporation

Semiconductor package and manufacturing method thereof

A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device structure (e.g., a sensor device structure), and method for manufacturing thereof, that comprises a three-dimensional package structure free of wire bonds, through silicon vias, and/or flip-chip bonding..
Amkor Technology, Inc.

Microelectronic devices designed with compound semiconductor devices and integrated on an inter die fabric

Embodiments of the invention include a microelectronic device that includes a first silicon based substrate having compound semiconductor components. The microelectronic device also includes a second substrate coupled to the first substrate.
Intel Corporation

Design of embedded sige epitaxy test pad

Techniques for measuring and testing a semiconductor wafer during semiconductor device fabrication include designating a test area on the top surface of the wafer and etching a first rectangular trench and a second rectangular trench on the top surface of the wafer in the test area. The trenches are oriented such that a length of the first trench is perpendicular to a length of the second trench, and positioned such that the length of the first trench, if extended, intersects the length of the second trench.
Shanghai Huali Microelectronics Corporation

Semiconductor device and manufacturing same

According to one embodiment, a stacked body includes a plurality of conductive layers stacked with an insulator interposed. A semiconductor body extends in the stacked body in a stacking direction of the stacked body.
Toshiba Memory Corporation

Light irradiation type heat treatment apparatus and heat treatment method

A semiconductor wafer that has a plane orientation of (100) and is made of monocrystalline silicon is warped along an axis, i.e., a diameter along a <100> direction of the semiconductor wafer when irradiated with a flash of light. The semiconductor wafer is placed on a susceptor while the direction of the semiconductor wafer is adjusted so that the diameter along the <100> direction coincides with an optical axis of an upper radiation thermometer.
Screen Holdings Co., Ltd.

Use of non-oxidizing strong acids for the removal of ion-implanted resist

A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials..
Entegris, Inc.

Hard mask removal method

A method of removing a hard mask is provided. Gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer.
Taiwan Semiconductor Manufacturing Company Limited

Liquid phase epitaxy doping and silicon pn junction photovoltaic devices

A method for forming a doped silicon layer or a silicon alloy includes providing a silicon substrate having a silicon surface. An eutectic-former layer with dopant is formed on the silicon surface.
The Regents Of The University Of California

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique which includes: forming a first film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: forming a first layer containing silicon, oxygen, carbon and nitrogen by simultaneously supplying first aminosilane and an oxidant to the substrate; and performing a first modifying process to the first layer under a first temperature; and performing a second modifying process to the first film under a second temperature that is higher than the first temperature.. .
Hitachi Kokusai Electric Inc.

Conductive ball

The present invention provides a conductive ball, which can be used as a connector by intervening between electrodes to apply a current between the electrodes with relatively high conductivity, and which is prevented from decreasing the conductivity due to the following thermal history. The conductive ball of the present invention comprises a sphere formed of an elastic body; a thermal expansion-resistant resin shell applied so as to coat the surface of the sphere; and a conductive metal shell applied so as to coat the outer surface of the thermal expansion-resistant resin shell.
Little Device Corporation

Arrays of integrated analytical devices and methods for production

Arrays of integrated analytical devices and their methods for production are provided. The arrays are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions.
Pacific Biosciences Of California, Inc.

Inertia sensor and manufacturing the same

Airtightness in a cavity of an inertial sensor (acceleration sensor) is increased to achieve high sensitivity. In the acceleration sensor having movable electrodes ve1, ve2 and fixed electrodes fe1, fe2, the fixed electrodes are formed by portions surrounded by a through hole th1 provided in a cap layer cl, and the through hole is filled with an insulating film if1 and polysilicon p and has a wide portion (wp).
Hitachi, Ltd.

Noise improvement in dna sequencing circuit by finfet-like nanopore formation

The disclosure generally relates to a deoxyribonucleic acid (dna) sequencing circuit having a controllable pore size and a lower membrane capacitance and noise floor relative to biological nanopore devices. For example, design principles used to fabricate a fin-shaped field effect transistor (finfet) may be applied to form, on a first wafer, a nanopore that has a desired pore size in a silicon-based membrane.
Qualcomm Incorporated

Hydrogen tank body and producing the same, and hydrogen tank and producing the same

A hydrogen tank body includes a base layer formed of a synthetic resin selected from the group consisting of silicon resin, polyphenylene sulfide, polybutylene terephthalate, polyvinyl chloride, polypropylene, polyethylene, and polycarbonate, and a liner layer formed of hydrogen impermeable resin, on an inside wall surface of the base layer.. .
Toyota Jidosha Kabushiki Kaisha

Fluid transport apparatus, flexible conduit, manufacturing flexible conduit, and storage method

A fluid transport apparatus defining an aseptic pathway configured to direct fluids therethrough is provided. The fluid transport apparatus may include a conduit extending between a first terminus and a second terminus.
Allpure Technologies, Llc.

Sharp and erosion resistance degradable material for slip buttons and sliding sleeve baffles

A sharp and erosion resistant degradable material used in a component in a downhole tool and a method of using said degradable material. More particularly, the sharp and erosion resistant degradable material includes dissolvable metal matrix composite which includes a dissolvable metal and a dispersed reinforcement material wherein the dissolvable metal is capable of dissolving via galvanic corrosion.
Halliburton Energy Services, Inc.

Modular carpet systems

A modular carpet system includes a carpet tile and an adhesive. The carpet tile is operative for resisting deformation, even under adverse conditions.
Tandus Centiva Inc.

Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber

A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray.
Daevac International Co., Ltd.

Method for manufacturing silicon carbide epitaxial substrate, manufacturing silicon carbide semiconductor device, and manufacturing silicon carbide epitaxial substrate

In forming of a silicon carbide layer, when an x axis indicates a first value representing, in percentage, a value obtained by dividing a flow rate of silane by a flow rate of hydrogen and a y axis indicates a second value representing a flow rate of ammonia in sccm, the first value and the second value fall within a quadrangular region surrounded by first coordinates, second coordinates, third coordinates, and fourth coordinates in xy plane coordinates. The first coordinates are (0.05, 6.5×10−4).
Sumitomo Electric Industries, Ltd.

Apparatus for growing single crystalline ingot and growing same

The present invention relates to an apparatus for growing a single crystal ingot capable of uniformly controlling an oxygen concentration in a longitudinal direction and a radial direction of a single crystal ingot by uniformly maintaining a convection pattern on a silicon melt interface, and a method for growing the same. In an apparatus for growing a single crystal ingot and a method for growing the same according to the present invention, a horizontal magnet is positioned to be movable up and down by a magnet moving unit around a crucible, so that a maximum gauss position (mgp) is positioned to be higher than the silicon melt interface and simultaneously, a rate of increase in the mgp is controlled to 3.5 mm/hr to 6.5 mm/hr, and thus it possible to secure simplicity and symmetry of convection on the silicon melt interface.
Sk Siltron Co., Ltd.

Methods for producing low oxygen silicon ingots

An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (sio) from the crucible to the single crystal, and an evaporation rate of sio from the melt..
Globalwafers Co., Ltd.

Method for growing single crystal

According to an embodiment of the present invention, there is provided a method for growing a single crystal ingot having a target resistivity in a silicon melt by the czochralski method, including steps of: deriving a resistivity value according to a dopant concentration included in a raw material and tabulating the resistivity value with reliable data; setting a reference value of a dopant concentration with respect to a target resistivity value; deriving a measurement value with respect to the dopant concentration included in the raw material itself; calculating a difference value between the reference value and the measurement value; and performing a counter doping on the silicon melt as much as the difference value. Accordingly, a single crystal ingot having a resistivity of 8 kΩ or more can be grown without improving impurities included in the raw material itself..
Sk Siltron Co., Ltd.

Conversion coating composition comprising a dye and a coating a metal surface with said conversion coating composition

The invention is directed to a conversion coating composition for coating a metal surface including a water soluble dye, at least one metal compound selected from the group consisting of a zirconium-containing compound, titanium-containing compound and silicon-containing compound; and water, wherein the provides for qualitative characterization of the conversion coating uniformity and thickness by the naked human eye or visible light detecting device; and, a method for coating the metal surfaces using the conversion coating composition.. .
Momentive Performance Materials Inc.

Electroless plating method and product obtained

The present invention relates to an electroless plating method, in which electroless plating is performed by contacting a substrate which is patterned with an anti-electroless plating coating with an electroless plating solution, whereby metal is deposited by electroless plating onto portions of the substrate that are not patterned with the anti-electroless plating coating, the anti-electroless plating coating having multiple layers, each of which is obtainable by plasma deposition of a precursor mixture comprising (a) one or more organosilicon compounds, (b) optionally o2, n2o, no2, h2, nh3, n2, sif4 and/or hexafluoropropylene (hfp), and (c) optionally he, ar and/or kr.. .
Semblant Limited

Film deposition method and film deposition apparatus

A film deposition method is provided for filling a recessed pattern formed in a surface of a substrate with a film. In the method, an adsorption blocking group is formed by adsorbing chlorine gas activated by plasma on a top surface of the substrate and an upper portion of the recessed pattern.
Tokyo Electron Limited

Gas barrier film and producing gas barrier film

A gas barrier film includes a film substrate, a silica layer, and an inorganic layer that is in direct contact with the silica layer in this order, and the silica layer includes an amine having a specific molecular weight and a specific boiling point, and a silica polymer having at least a covalent bond between a silicon atom and an oxygen atom. A method of producing a gas barrier film includes applying a coating liquid including an amine having a specific molecular weight and a specific boiling point, and a silicon compound to a film substrate to form a coating layer including a silicon compound, irradiating the coating layer including the silicon compound with vacuum ultraviolet rays to form a silica layer including a silica polymer having at least a covalent bond between a silicon atom and an oxygen atom, and forming an inorganic layer on a surface of the silica layer by a vapor deposition method or a sputtering method..
Fujifilm Corporation

Heat treatable coated article having zirconium nitride and ito based ir reflecting layers

Coated articles include two or more functional infrared (ir) reflecting layers optionally sandwiched between at least dielectric layers. The dielectric layers may be of or including silicon nitride or the like.
Guardian Glass, Llc

Silicone polymer emulsions

Silicone oil-in-water emulsions containing a polysiloxane containing polymer is prepared by first preparing a polysiloxane containing polymer by the polymerisation of siloxane containing monomers and/or oligomers in the presence of an inert organopoly siloxane and/or an organic fluid, a suitable catalyst and optionally an end-blocking agent; and quenching the reaction if required. If required one or more surfactants may be introduced into the polysiloxane containing polymer to form a homogenous oil phase.
Dow Silicones Corporation

Relating to lubricating compositions

A lubricating oil composition, a method of reducing low-speed pre-ignition (lspi) in a direct-injected spark-ignited internal combustion engine, and a use of a lubricant composition to reduce lspi events in such an engine. Preferably, the composition comprises a detergent comprising an overbased calcium detergent having a total base number (tbn) of at least 150, wherein the lubricating oil composition has a calcium content of at least 0.08 wt.
Infineum International Limited

Desulfurization of a naphtha boiling range feed

Processes for desulfurizing a fluid catalytic cracker (fcc) naphtha feedstock, straight run naphtha feedstocks and combinations thereof are provided herein. Naphtha boiling range feed is passed over a silicon trap prior to being hydrodesulfurized in an olefin-retentive, catalytic naphtha hydrodesulfurization process.
Exxonmobil Research And Engineering Company

Method for preparing iron silicon sulfur multi-element composite biochar soil heavy metal conditioner

A method for preparing an iron silicon sulfur multi-element composite biochar soil heavy metal conditioner, including: adding silicate to agricultural wastes and roasting with air isolated to enable silicate to enter structural pores of biochar; enabling iron-containing slats to gather on kaolinite with a given proportion; enabling sulfate to gather on bentonite with a given proportion; mixing the above three materials evenly according to a given proportion; and adding diatomite and starch to the mixture, and pelleting to prepare the iron silicon sulfur multi-element composite biochar soil heavy metal conditioner. The conditioner can be widely applied in soil heavy metal pollution abatement of rice fields, and it is able to synchronously passivate composite pollutants in acid or alkaline soils to reduce the amount of pollutants absorbed by and accumulated in rice, thereby achieving safe utilization of polluted farmland..
Guangdong Institute Of Eco-environmental Science & Technology

Method for producing a conversion element

A method for producing a conversion element is disclosed. In an embodiment, the method includes providing an acidic medium having a ph value of less than 2, adding a conversion material into the acidic medium thereby forming a mixture and adding a silicate solution having a viscosity between 2 to 10 000 poise inclusive to the mixture such that the ph value during the addition of the silicate solution is smaller than 2.
Osram Opto Semiconductors Gmbh

Two-part adhesive comprising phenoxyethyl methacrylate and tetrahydrofurfuryl methacrylate, structure including cured material thereof

A two-part adhesive that enables adhesion in a wide temperature range near room temperature and exhibits an excellent adhesion strength on a poorly-adhesive substrate including a silicone rubber or the like. In some embodiments, the two-part adhesive includes: a main agent including phenoxyethyl methacrylate and tetrahydrofurfuryl methacrylate; and an initiator including an organoborane; wherein the main agent includes the phenoxyethyl methacrylate at 60 to 95% by mass with reference to a mass of a polymerizable component..
3m Innovative Properties Company

Curable coating compositions of silane functional polymers

There is a tin-free curable composition having (a) one or more organic polymers having a reactive-silicon-containing group, wherein at least one polymer has a main chain skeleton selected from the group consisting of polyoxyalkylene polymers, saturated hydrocarbon polymers, and (meth)acrylic acid ester polymers; (b) from 0.001 to 20 parts by weight for 100 parts by weight of the organic polymer(s) (a) of a silanol condensation catalyst consisting of one or more metal amidine complexes and one or more amine carboxylate salts, (c) a crosslinker or chain extender chosen from an alkoxysilane, an alkoxysiloxane, an oximosilane, an oximosiloxane, an epoxysilane, an epoxysiloxane, an aminosilane, a carboxysilane, a carboxysiloxane, an alkylamidosilane, an alkylamidosiloxane, an arylamidosilane, an arylamidosiloxane, an alkoxyaminosilane, an alkaryaminosiloxane, an alkoxycarbamatosilane, an alkoxycarbamatosiloxane, and combinations of two or more thereof; and (d) at least one adhesion promoter chosen from a silane or siloxane other than the compounds listed under (c). There is also a cured polymer formed from the tin-free curable composition..
King Industries

Addition-curable silicone resin composition and die attach material for optical semiconductor device

An addition-curable silicone resin composition comprising (a-1) a linear organopolysiloxane having, per molecule, two or more alkenyl groups having 2 to 8 carbon atoms, (a-2) a branched organopolysiloxane represented by a specific formula and having, per molecule, two or more alkenyl groups having 2 to 8 carbon atoms, (b-1) a branched organohydrogenpolysiloxane represented by a specific formula, wherein the weight average molecular weight of the polysiloxane and the content of sih group-containing organosilicon compounds having 1 to 10 silicon atoms are each in a specified range, (b-2) a linear organohydrogenpolysiloxane represented by a specified formula, wherein the content of sih group-containing organosilicon compounds having 1 to 10 silicon atoms is in a specified range, and (c) an addition reaction catalyst.. .

Curable composition and cured product from same

Provided is a curable composition which has excellent curability, less causes silicone molds to swell, and allows the silicone molds to have better durability and a longer service life in repeated use. The curable composition according to the present invention is a curable composition for production of an optical component by molding using silicone molds.
Daicel Corporation

Organosilicon compound, polymer compound, inorganic material and resin composition

Wherein r1 to r3 each independently represent a chlorine atom, a methoxy group, or an ethoxy group; r4 represents an alkyl group having 1 to 10 carbon atoms; r5 represents an alkylene group having 1 to 10 carbon atoms; and r6 represents a hydrogen atom or a methyl group.. .

Ceramic bonded body

A ceramic bonded body of the disclosure includes a first silicon carbide ceramics, a second silicon carbide ceramics, and a bonding layer positioned between the first silicon carbide ceramics and the second silicon carbide ceramics. The bonding layer contains 25 mass % or more metallic silicon, and 25 mass % or more silicon carbide assuming all components constituting the bonding layer as 100 mass %, and a total of the metallic silicon and the silicon carbide is 75 mass % or more, and the bonding layer further contains at least one of nickel silicide and chromium silicide..
Kyocera Corporation

Silicon nitride sintered body with high thermal conductivity and manufacturing same

Embodiments relate to a method for manufacturing a silicon nitride sintered body with high thermal conductivity, which includes the steps of: a) obtaining a slurry by mixing a silicon nitride powder and a non-oxide based sintering aid; b) obtaining a mixed powder by drying the slurry; c) forming a compact by pressurizing the mixed powder; and d) sintering the compact.. .
Kcc Corporation

Heat treatable coated article having titanium nitride and ito based ir reflecting layers

Coated articles include two or more functional infrared (ir) reflecting layers optionally sandwiched between at least dielectric layers. The dielectric layers may be of or including silicon nitride or the like.
Guardian Industries Corp.

Chabazite-type zeolite and manufacturing chabazite-type zeolite

A process of manufacturing a chabazite-type zeolite is provided having high heat resistance without having a large crystal size. A catalyst is also provided that contains such a chabazite-type zeolite and exhibits high nitrogen oxide reduction properties, and in particular high nitrogen oxide reduction properties in low temperatures below 200° c., even after exposure to high temperature and high humidity.
Tosoh Corporation

Silica to high purity silicon production process

An apparatus and a process for the production of high purity silicon from silica containing material such as quartz or quartzite, using a vacuum electric arc furnace, are disclosed.. .
Pyrogenesis Canada Inc.

Safe and low temperature thermite reaction systems and method to form porous silicon

Embodiments of a safe, low-temperature reaction system and method for preparing porous silicon are disclosed. The porous silicon is prepared from porous silica, a low-melting metal halide, and a metal comprising aluminum, magnesium, or a combination thereof.
Battelle Memorial Institute

Hydrogen gas recovery system and hydrogen gas separation and recovery method

A hydrogen gas recovery system according to the present ingestion is configured by a condensation and separation apparatus (a) that condenses and separates chlorosilanes from a hydrogen-containing reaction exhaust gas exhausted from a polycrystalline silicon production step, a compression apparatus (b) that compresses the hydrogen-containing reaction exhaust gas, an absorption apparatus (c) that absorbs and separates hydrogen chloride by contacting the hydrogen-containing reaction exhaust gas with an absorption liquid, a first adsorption apparatus (d) comprising an adsorption column filled with activated carbon for adsorbing and removing methane, hydrogen chloride, and part of the chlorosilanes each contained in the hydrogen-containing reaction exhaust gas, a second adsorption apparatus (e) comprising an adsorption column filled with synthetic zeolite that adsorbs and removes methane contained in the hydrogen-containing reaction exhaust gas, and a gas line (f) that recovers a purified hydrogen gas having a reduced concentration of methane.. .
Shin-etsu Chemical Co., Ltd.

Semiconductor device, microphone and methods for forming a semiconductor device

A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate.
Infineon Technologies Ag

Method of manufacturing an ink-jet printhead

The present application relates to a method of manufacturing an ink-jet printhead comprising: providing a silicon substrate (10) including active ejecting elements (11); providing a hydraulic structure layer (20) for defining hydraulic circuits configured to enable a guided flow of ink; providing a silicon orifice plate (30) having a plurality of nozzles (31) for ejection of the ink; assembling the silicon substrate (10) with the hydraulic structure layer (20) and the silicon orifice plate (30); wherein providing the silicon orifice plate (30) comprises: providing a silicon wafer (40) having a planar extension delimited by a first surface (41) and a second surface (42) on opposite sides of the silicon wafer (40); performing a thinning step at the second surface (42) so as to remove from the second surface (42) a central portion (43) having a preset height (h), the silicon wafer (40) being formed, following the thinning step, by a base portion (44) having a planar extension and a peripheral portion (45) extending from the base portion (44), transversally with respect to the planar extension of the base portion (44); and forming in the silicon wafer (40) a plurality of through holes, each defining a respective nozzle (31) for ejection of the ink. The method according to the present invention is characterized in that the silicon wafer (40) is a silicon-on-insulator wafer, wherein the silicon-on-insulator wafer comprises a silicon device layer (38) adjacent to the first surface (41), a silicon handle layer (37) adjacent to the second surface (42) and an insulator layer (39) in-between..
Sicpa Holding Sa

Cutting blade and cutting apparatus

Disclosed herein is an electroformed cutting blade having a cutting edge containing super abrasive grains. The cutting edge further contains filler particles formed of silicon-based organic material..
Disco Corporation

A brazing material for brazing articles of austenitic stainless steel and method therefore

A brazing material for brazing articles of austenitic stainless steel comprises: 1.8-2.2% molybdenum (mo); 12.5-13.5% nickel (ni); 16.8-18.6% chromium (cr); 7.0-12.0% silicon (si); 3.0-5.5% mn; 1.0-2.0% boron (b); balance being iron (fe) and small amounts of other elements, wherein the percentages of these elements are lower than 0.1% for each element, all percentages being given by weight.. .
Swep International Ab

Rice bran sterol sugar-coated tablet

The present invention discloses a rice bran sterol sugar-coated tablet comprising rice bran sterol, a filler and a coating agent, wherein a mass ratio of the rice bran sterol, the filler and the coating agent is 1:3.9-4.5:1.30-1.35. The filler is composed of starch, dextrin, talcum powder, calcium carbonate, microcrystalline cellulose, starch slurry, carboxymethyl starch sodium, magnesium stearate and silicon dioxide in a mass ratio of 1.29-1.5:0.5-0.71:1:1:0.24-0.25:1.86-2.25:0.16-0.18:0.028-0.03:0.14-0.17, and the coating agent is composed of white sugar, gum, gelatin, pigment and chinese insect wax in a mass ratio of 201-249:5.56-8:1:0.06-0.07:1.
Hangzhou Yipin Xinwufeng Pharmaceutical Co., Ltd.

Dry electrode for detecting biosignal and manufacturing same

Provided is a dry electrode for detecting a bio-signal, comprising a body part; a protrusion part formed on one surface of the body part; and a coating part formed on an end surface of the protrusion part, wherein the body part and the protrusion part comprise a conductive silicone, and the coating part comprises ag, agcl, and, optionally, 3-aminopropyltriethoxysilane.. .
Y-brain Inc

Inner sealable, elastic, contracting, collapsing membrane made from flexible plastic base, and/or/with rubber base, and/or/with nylon based, and/or/with metal base material and/or combination material/s installed inside plastic, glass, metals bottles, containers, dispensers, caps, refillables, and/ closures for liquids, attached to metal or plastic tubing enclosed with ball bearing for manual and/or automatic suction action for pumps, sprayers, triggers, and droppers

This invention addresses waste of liquids in all sorts of bottles/containers made from plastic, glass, metals bottles, containers, dispensers, caps which use pumping action to expel all sorts of liquids. Inside the bottles will be installed a refillables enclosed bags for liquids made from plastic/silicon based membrane inserted in plastic and glass bottles (containers) filling the volume within the bottles/containers, expelling the liquids using various type of pumps to improve suction of leftover (excess) of liquid as oil base, water base, soap base as shampoo, and any liquid in the bottom of the containers.

Shin-etsu Chemical Co., Ltd.

. .

Daicel Corporation

. .

Wiring board and manufacturing wiring board

For a wiring board, silicon including a first main surface and a second main surface is a base, a first conductor on the first main surface and a second conductor on the second main surface are connected by a through electrode formed of an electroplating layer disposed on an inner surface of a through hole, a bottom surface of which is the second conductor, and a hilling which is a continuous projecting portion is provided on the inner surface of the through hole from the first main surface to the second main surface in parallel with a depth direction.. .
Olympus Corporation

Multiple mems motor apparatus with common vent

A first mems motor and s second mems motor share a common back volume and a common support structure, and the common support structure is configured to support a first diaphragm and the first back plate, and the common support structure is also configured to support the second diaphragm and the second back plate. A channel passes through the common support structure and communicates with the exterior environment, the channel being of a first diameter, the channel being disposed beyond an outer periphery of each back plate.
Knowles Electronics, Llc

Method and system for large silicon photonic interposers by stitching

Methods and systems for large silicon photonic interposers by stitching are disclosed and may include, in an integrated optical communication system including cmos electronics die coupled to a silicon photonic interposer, where the interposer includes a plurality of reticle sections: communicating an optical signal between two of the plurality of reticle sections utilizing a waveguide. The waveguide may include a taper region at a boundary between the two reticle sections, the taper region expanding an optical mode of the communicated optical signal prior to the boundary and narrowing the optical mode after the boundary.
Luxtera, Inc.

Control circuitry for silicon-on-insulator chip

Disclosed herein are non-limiting examples of charge pumps that reduce the introduction of noise into a circuit in which they are implemented and/or lower the output impedance when providing certain voltages (e.g., negative voltage generators). The disclosed technologies utilize a plurality of smaller charge pumps (or charge pump units) working in parallel that operate on different clock phases rather than using a single charge pump with a relatively large flying capacitor or a plurality of charge pumps in series.
Skyworks Solutions, Inc.

Electric submersible pump variable speed drive controller

An electric submersible pump (esp) variable speed drive (vsd) controller is described. A vsd control system includes a pump assembly including an induction motor operatively coupled to a pump, a power cable and a transformer electrically coupled between the induction motor and a vsd controller that controls a speed of the induction motor, the vsd controller including a converter section that sends a direct current (dc), a dc link including a dc smoothing capacitor that smooths the dc, an inverter that converts the smoothed dc to a pulse width modulated (pwm) output voltage, the inverter including at least one silicon carbide (sic) power semiconductor module, and a pwm filter that filters the pwm output voltage to produce near sinusoidal voltages, the pwm filter including inductors, and the pwm filter sending voltage to the transformer..
Summit Esp, Llc

Current limiting systems and methods

Presented systems and methods can facilitate efficient switching and protection in electronic systems. A system can comprise: an input operable to receive a signal; an adjustable component configurable to operate in a first mode which includes a low resistance and the component configurable to operate in a second mode which includes a current limiting operation in which the second mode enables continued operation in conditions that are unsafe for operation in the first mode; and an output operable to forward a signal.
Vishay-siliconix

Electrolyte formulations for electrochemical cells containing a silicon electrode

Additives to electrolytes that enable the formation of comparatively more robust sei films on silicon anodes. The sei films in these embodiments are seen to be more robust in part because the batteries containing these materials have higher coulombic efficiency and longer cycle life than comparable batteries without such additives..
Wildcat Discovery Technologies, Inc.

Lithium ion secondary battery

A lithium ion secondary battery 10 includes at least one cell obtained by laminating a positive electrode 1, an electrolyte layer 2, and a negative electrode 3 in this order. The electrolyte layer 2 contains a fluoride.
Sekisui Chemical Co., Ltd.

Positive electrode active material for secondary battery and preparing the same

The present invention relates to a positive electrode active material for a secondary battery, which comprises a core including a lithium composite metal oxide, and a surface treatment layer located on a surface of the core and including an amorphous oxide, wherein the amorphous oxide including silicon (si), nitrogen (n) and at least one metal element selected from the group consisting of a group 1a element, a group 2a element, and a group 3b element, and a method for preparing the same.. .
Lg Chem, Ltd.

Process method using deformable organic silicone resin photoconverter to bond-package led

A process method for bond-packaging an led using a special-shaped organic silicone resin photoconverter includes the following continuous process flow: roll-molding of a refined photoconversion sheet, roll-shaping of a photoconversion sheet array, sheet melting for the photoconversion sheet array, preparation of a flip chip led array sheet, forming of led package elements by roll-bonding, curing of the led package elements, and cutting of the led package elements. The present invention has a significant advantage of bond-packaging an led by continuous rolling, and can meet a condition requirement of bond-packaging an led using a special-shaped organic silicone resin photoconverter, thereby enhancing the production efficiency and yield of led packages in industrialized batch production..
Jiangsu Cherrity Optronics Co., Ltd.

Equipment system using deformable organic silicone resin photoconverter to bond-package led

An equipment system for bond-packaging an led using a special-shaped organic silicone resin photoconverter includes: a roll-laminating apparatus used for refining a photoconversion sheet (8-6); a roll-shaping apparatus used for performing heating and roll-shaping on the refined photoconversion sheet (8-6); a sheet-melting apparatus (3) used for performing sheet melting on the roll-shaped refined photoconversion sheet (8-6); and a roll-bonding apparatus used for performing roll-bonding on the sheet-melted refined photoconversion sheet and a flip chip led array with a carrier film, the refined photoconversion sheet and the flip chip led array facing each other and being aligned with each other. The roll-laminating apparatus, the roll-shaping apparatus, the sheet-melting apparatus, and the roll-bonding apparatus are arranged sequentially to form cooperatively linked process equipment.
Jiangsu Cherrity Optronics Co., Ltd.

Solid-state light emitting devices and signage with photoluminescence wavelength conversion and photoluminescent compositions therefor

A photoluminescent composition (“phosphor ink”) comprises a suspension of particles of at least one blue light (380 nm to 480 nm) excitable phosphor material in a light transmissive liquid binder in which the weight loading of at least one phosphor material to binder material is in a range 40% to 75%. The binder can be u.v.
Intematix Corporation

Photodetector

A germanium photodetector which reduces a dark current without degradation of a photocurrent includes: a silicon substrate; a lower clad layer formed on the silicon substrate; a core layer formed on the lower clad layer; a p-type silicon slab formed in a part of the core layer and doped with a p-type impurity ion; p++ silicon electrode sections that are highly-doped with a p-type impurity and act as an electrode; and germanium layers which absorb light. The germanium photodetector further includes an upper clad layer, an n-type germanium region doped with an n-type impurity above the germanium layer, and an electrode.
Nippon Telegraph And Telephone Corporation

Optically isolated photodiode for high sensitivity application

An integrated silicon-based photo-detection system, fabricated in an integrated silicon based structure on a silicon-on-insulator (soi) wafer, includes a photodiode fabricated on an isolated area surrounded by a light barrier, where the light barrier is an area where the soi wafer is removed, an optical waveguide that guides an input signal light into the photodiode, and external electrical traces that the free electron carriers flow into as photocurrent. A method of fabricating an integrated silicon-based photo-detection system in an integrated silicon based structure on a silicon-on-insulator (soi) wafer, includes performing deep etching to create a light barrier surrounding an isolated area on the soi wafer, fabricating a photodiode in the isolated area surrounded by the light barrier, fabricating an optical waveguide that guides an input signal light into the photodiode, and wirebonding external electrical traces to connect to the remainder of the integrated silicon based structure..
Ciena Corporation

Semiconductor arrangement with substrate isolation

One or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a channel, such as an un-doped channel, over a substrate.
Taiwan Semiconductor Manufacturing Company Limited

Transistors and methods of forming transistors using vertical nanowires

Devices and methods of fabricating vertical nanowires on semiconductor devices are provided. One method includes: obtaining an intermediate semiconductor device having a substrate, a first insulator disposed above the substrate, a material layer over the first insulator, a second insulator above the material layer, and a first hardmask; etching a plurality of vertical trenches through the hardmask, the first and second insulators, and the material layer; growing, epitaxially, a set of silicon nanowires from a bottom surface of the plurality of vertical trenches; etching a first set of vertical trenches to expose the material layer; etching a second set of vertical trenches to the substrate; depositing an insulating spacer material on a set of sidewalls of the first and second set of vertical trenches; and forming contacts in the first and second set of vertical trenches..
Globalfoundries Inc.

Gate cut integration and related device

A method for forming gate cuts during rmg processing and the resulting device are provided. Embodiments include forming si fins over a substrate; forming a sti layer over the substrate and recessed, exposing upper portions of the si fins; forming polysilicon dummy gate electrodes perpendicular to the si fins, separated by sti regions, on the upper portions of the si fins and on the sti layer between the si fins; forming a hardmask over the polysilicon dummy gate electrodes; etching through the hardmask and polysilicon dummy gate electrodes forming cavities between some of the si fins; oxidizing polysilicon exposed on sides of the cavities and any residual polysilicon remaining at a bottom of one or more of the cavities; filling the cavities with sin; removing the polysilicon dummy gate electrodes; and forming rmgs..
Globalfoundries Inc.

Silicon carbide power transistor apparatus and producing same

A silicon carbide semiconductor device, wherein the gate insulator is formed by performing a hydrogen etch on an upper exposed surface of a sic substrate, performing a termination anneal on the upper exposed surface, and depositing a gate insulator material on the upper exposed surface. The sic substrate may include multiple n-type and p-type doped regions..
Purdue Research Foundation

Silicon carbide semiconductor device and manufacturing the same

A silicon carbide semiconductor device includes: a drift layer in contact with a first main surface and having a first conductivity type; a body region located in the drift layer, in contact with the first main surface, and having a second conductivity type; and a protruding portion having the second conductivity type and connected to a bottom of the body region. A manufacturing method includes forming, in the drift layer of a silicon carbide substrate, by ion implantation, the body region, the protruding portion, a jte region, and at least one guard ring region, each having the second conductivity type..
Sumitomo Electric Industries, Ltd.

Silicon carbide epitaxial substrate

A silicon carbide epitaxial substrate includes: a silicon carbide single crystal substrate; and an epitaxial layer. The silicon carbide single crystal substrate has a diameter of not less than 100 mm.
Sumitomo Electric Industries, Ltd.

Germanium-silicon light sensing apparatus ii

A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first mosfet transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.. .
Artilux Corporation

Imaging device and electronic device

An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated.
Semiconductor Energy Laboratory Co., Ltd.

Germanium-silicon light sensing apparatus ii

An optical apparatus that includes: a semiconductor substrate formed from a first material, the semiconductor substrate including a first n-doped region; and a photodiode supported by the semiconductor substrate, the photodiode including an absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons, the absorption region being formed from a second material different than the first material and including: a first p-doped region; and a second n-doped region coupled to the first n-doped region, wherein a second doping concentration of the second n-doped region is less than or substantially equal to a first doping concentration of the first n-doped region.. .
Artilux Corporation

Cmos with middle of line processing of iii-v material on mandrel

A method includes forming first structures on a first portion of a silicon substrate and second structures on a second portion of the substrate; forming spacers on the first structures; forming dummy gates on the first and second structures; depositing a first interlayer dielectric on the dummy gates; removing the dummy gates from the second structures; forming metal gates on the second structures; performing an anneal; forming recess areas in the first interlayer dielectric; removing the spacers from the first structures; epitaxially growing sidewalls on the first structures; removing portions of the first structures outside the dummy gates from the first portion; depositing a second interlayer dielectric on the first portion; removing the dummy gates from the first portion; removing portions of the first structures previously under the dummy gates from the first portion; and forming metal gates on the first structures.. .
International Business Machines Corporation

Cmos with middle of line processing of iii-v material on mandrel

A method includes forming first structures on a first portion of a silicon substrate and second structures on a second portion of the substrate; forming spacers on the first structures; forming dummy gates on the first and second structures; depositing a first interlayer dielectric on the dummy gates; removing the dummy gates from the second structures; forming metal gates on the second structures; performing an anneal; forming recess areas in the first interlayer dielectric; removing the spacers from the first structures; epitaxially growing sidewalls on the first structures; removing portions of the first structures outside the dummy gates from the first portion; depositing a second interlayer dielectric on the first portion; removing the dummy gates from the first portion; removing portions of the first structures previously under the dummy gates from the first portion; and forming metal gates on the first structures.. .
International Business Machines Corporation

Integrated circuit and manufacturing the same

An integrated circuit includes a high-voltage mos (hv) transistor and a capacitor supported by a semiconductor substrate. A gate stack of the hv transistor includes a first insulating layer over the semiconductor layer and a gate electrode formed from a first polysilicon.
Stmicroelectronics (crolles 2) Sas

Method for fabricating semiconductor device

A semiconductor device including a logic transistor, a non-volatile memory (nvm) cell and a contact etching stop layer (cesl) is shown. The cesl includes a first silicon nitride layer on the logic transistor but not on the nvm cell, a silicon oxide layer on the first silicon nitride layer and on the nvm cell, and a second silicon nitride layer disposed on the silicon oxide layer over the logic transistor and disposed on the silicon oxide layer on the nvm cell..
United Microelectronics Corp.

Method of fabricating packaging structure

A package structure includes a dielectric layer having opposing first and second surfaces, a wiring layer formed on the first surface and having a plurality of conducive vias that penetrate the dielectric layer, an electronic component disposed on the first surface of the dielectric layer and electrically connected to the wiring layer, an encapsulant encapsulating the electronic component, and a packaging substrate disposed on the second surface and electrically connected to the conductive vias. With the dielectric layer in replacement of a conventional silicon board and the wiring layer as a signal transmission medium between the electronic component and the packaging substrate, the package structure does not need through-silicon vias.
Siliconware Precision Industries Co., Ltd.

Semiconductor device and authentication system

In order to realize a silicon puf of lower power consumption, a semiconductor device includes first and second mis transistors of the same conductive type in off-state coupled in series, as a puf element. The puf element outputs a signal of high level or low level depending on the potential of a connection node of the first and the second mis transistors.
Renesas Electronics Corporation

Semiconductor package assembly

The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package and a second semiconductor package overlying a portion of the first semiconductor package.
Mediatek Inc.

Flip-chip mounting of silicon-on-insulator die

A component of an electronic device comprises a semiconductor die flip-chip mounted on a printed circuit board and a barrier mechanically coupled to a portion of the die and the printed circuit board, the barrier defining a cavity between a surface of the die and the printed circuit board.. .
Skyworks Solutions, Inc.

Structure and tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step

A method of making a semiconductor device includes forming a first silicon germanium layer on a substrate, the first silicon germanium layer forming a portion of a first transistor; forming a second silicon germanium layer on the substrate adjacent to the first silicon germanium layer, the second silicon germanium layer forming a portion of a second transistor and having a germanium content that is different than the first silicon germanium layer and a thickness that is substantially the same; growing by an epitaxial process a compressively strained silicon germanium layer on the first silicon germanium layer, and a tensile strained silicon germanium layer on the second silicon germanium layer; patterning a first fin in the compressively strained silicon germanium layer and the first silicon germanium layer; and patterning a second fin in the tensile strained silicon germanium layer and the second silicon germanium layer.. .
International Business Machines Corporation

Method for preventing dishing during the manufacture of semiconductor devices

A method for manufacturing a semiconductor device and a device manufactured using the same are provided. According to a method approach of the embodiment, a substrate having at least a first area with a plurality of polysilicon gates and a second area adjacent to the first area is provided.
United Microelectronics Corp.

Graphene contacts on source/drain regions of finfet devices

A finfet device includes a fin formed in a semiconductor substrate, a gate structure positioned above a portion of the fin, and source and drain regions positioned on opposite sides of the gate structure, wherein the semiconductor substrate includes a first semiconductor material. A silicon-carbide (sic) semiconductor material is positioned above the fin in the source region and the drain region, wherein the silicon-carbide (sic) semiconductor material is different from the first semiconductor material.
Globalfoundries Inc.

Techniques for revealing a backside of an integrated circuit device, and associated configurations

Embodiments of the present disclosure describe techniques for revealing a backside of an integrated circuit (ic) device, and associated configurations. The ic device may include a plurality of fins formed on a semiconductor substrate (e.g., silicon substrate), and an isolation oxide may be disposed between the fins along the backside of the ic device.
Intel Corporation

Local trap-rich isolation

A trap-rich polysilicon layer is interposed between the active (soi) layer and the underlying handle portion of a semiconductor substrate to prevent or minimize parasitic surface conduction effects within the active layer and promote device linearity. In various embodiments, the trap-rich layer extends vertically through a portion of an isolation layer and laterally therefrom between the isolation layer and the handle portion of the substrate to underlie a portion of the device active area..
Globalfoundries, Inc.

Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress

A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, a textured oxide, nitride, or oxynitride layer, a polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer.
Sunedison Semiconductor Limited (uen201334164h)

Substrate treatment apparatus and manufacturing semiconductor device

According to an embodiment, a substrate treatment apparatus includes a tank and a control mechanism. The tank houses a substrate including a silicon oxide film and a silicon nitride film, and receives a supply of a phosphoric acid solution capable of selectively etching the silicon nitride film rather than the silicon oxide film.
Toshiba Memory Corporation

Non-volatile flash memory cell

A method for manufacturing a flash memory device on a substrate may include: preparing the substrate with shallow trench isolation to define active sections; depositing a floating gate oxide layer on the prepared substrate; depositing a floating gate polysilicon layer on the floating gate oxide layer; polishing the floating gate polysilicon layer to isolate a plurality of floating gates above the active sections of the substrate; depositing a silicon nitride layer on top of the plurality of floating gates; patterning and etching the silicon nitride layer to create silicon nitride features; depositing a set of oxide spacers along sides of the silicon nitride features; implanting a source junction into the substrate beneath the individual floating gates; removing the floating gate polysilicon layer except where beneath individual oxide spacers, then removing the set of oxide spacers; depositing an inter-poly layer on top of the remaining floating gates; depositing a second polysilicon layer on top of the inter-poly layer; and patterning and etching the second polysilicon layer to separate the second polysilicon layer into word line devices and erase gates.. .
Microchip Technology Incorporated

Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device

Methods are provided to form pure silicon oxide layers on silicon-germanium (sige) layers, as well as an fet device having a pure silicon oxide interfacial layer of a metal gate structure formed on a sige channel layer of the fet device. For example, a method comprises growing a first silicon oxide layer on a surface of a sige layer using a first oxynitridation process, wherein the first silicon oxide layer comprises nitrogen.
International Business Machines Corporation

Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device

Methods are provided to form pure silicon oxide layers on silicon-germanium (sige) layers, as well as an fet device having a pure silicon oxide interfacial layer of a metal gate structure formed on a sige channel layer of the fet device. For example, a method comprises growing a first silicon oxide layer on a surface of a sige layer using a first oxynitridation process, wherein the first silicon oxide layer comprises nitrogen.
International Business Machines Corporation

Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (hf) based chemistry, wherein the hydrofluoric (hf) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer.
International Business Machines Corporation

Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (hf) based chemistry, wherein the hydrofluoric (hf) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer.
International Business Machines Corporation

Self-aligned nanodots for 3d nand flash memory

A method of forming a 3d nand structure having self-aligned nanodots includes depositing alternating layers of an oxide and a nitride on a substrate; at least partially recessing the nitride layers; and forming sige nanodots on the nitride layers. A method of forming a 3d nand structure having self-aligned nanodots includes depositing alternating layers of an oxide and a nitride on a substrate; at least partially recessing the nitride layers; and forming sige nanodots on the nitride layers by a process including maintaining a temperature of the substrate below about 560° c.; flowing a silicon epitaxy precursor into the chamber; forming a silicon epitaxial layer on the substrate at the nitride layers; flowing germanium gas into the chamber with the silicon epitaxy precursor; and forming a silicon germanium epitaxial layer on the substrate at the nitride layers..
Applied Materials, Inc.

Method for manufacturing silicon-carbide semiconductor element

In this method for manufacturing a semiconductor element, a modified layer produced by subjecting a substrate (70) to mechanical polishing is removed by heating the substrate (70) under si vapor pressure. An epitaxial layer formation step, an ion implantation step, an ion activation step, and a second removal step are then performed.
Kwansei Gakuin Educational Foundation

High deposition rate and high quality nitride

In one implementation, a method comprising depositing one or more silicon oxide/silicon nitride containing stacks on a substrate positioned in a processing chamber is provided. Depositing the one or more silicon oxide/silicon nitride containing stacks comprises (a) energizing a first process gas into a first plasma, (b) depositing a first film layer over the substrate from the first plasma, (c) energizing a second process gas into a second plasma, wherein the second process gas comprises a compound having at least one silicon-nitrogen bond and (d) depositing a second film layer on the first film layer from the second plasma.
Applied Materials, Inc.

Method to increase the lithographic process window of extreme ultra violet negative tone development resists

A patterning method that includes providing an amorphous semiconductor surface to be patterned, and terminating the amorphous semiconductor surface by forming silicon-hydrogen (si—h) on the surface to be patterned. A photoresist is formed on the surface to be patterned.
International Business Machines Corporation

Method to increase the lithographic process window of extreme ultra violet negative tone development resists

A patterning method that includes providing an amorphous semiconductor surface to be patterned, and terminating the amorphous semiconductor surface by forming silicon-hydrogen (si—h) on the surface to be patterned. A photoresist is formed on the surface to be patterned.
International Business Machines Corporation

Selective deposition of silicon oxide

Methods and apparatuses for selectively depositing silicon oxide on a silicon oxide surface relative to a silicon nitride surface are described herein. Methods involve pre-treating a substrate surface using ammonia and/or nitrogen plasma and selectively depositing silicon oxide on a silicon oxide surface using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction without depositing silicon oxide on an exposed silicon nitride surface..
Lam Research Corporation

Method of manufacturing semiconductor device

There is provided a method of manufacturing a semiconductor device which includes: supplying a process gas to a process chamber in a state in which a substrate with an insulating film formed thereon is mounted on a substrate support part inside the process chamber; supplying a first power from a plasma generation part to the process chamber to generate plasma and forming a first silicon nitride layer on the insulating film; and supplying a second power from an ion control part to the process chamber in parallel with the generation of plasma, to form a second silicon nitride layer having lower stress than that of the first silicon nitride layer on the first silicon nitride layer.. .
Hitachi Kokusai Electric Inc.

Microengineered skimmer cone for a miniature mass spectrometer

A method for forming a miniature skimmer cone for a free jet expansion vacuum interface is disclosed. The skimmer cone is formed from electroplated metal, deposited inside a blind hole formed on a silicon substrate.
Microsaic Systems Plc

Forming ion pump having silicon manifold

An ultra-high vacuum (uhv) system includes a uhv cell and an ion pump to maintain the uhv in the uhv cell. The ion pump has a gcc (glass, ceramic, or crystalline) housing.
Coldquanta, Inc.

Cold-matter system having integrated pressure regulator

A cold-atom cell is formed by machining a block of silicon to define sites for an atom source chamber, an atom manipulation chamber, and an ion-pump chamber. A polished silicon panel is frit-bonded to an unpolished (due to machining) chamber wall (which would be difficult and costly to polish).
Coldquanta, Inc.

Plasma processing method and plasma processing apparatus

A plasma processing method is provided that includes applying a radio frequency power to an upper electrode of a chamber, and performing a coating process by supplying a coating gas, including a carbon-containing gas, to an interior of the chamber to generate a plasma from the supplied coating gas, and coating the interior of the chamber with a carbon film using the plasma generated from the coating gas. The plasma processing method further includes performing an etching process after the coating process by supplying an etching gas, including a fluorocarbon-containing gas, to the interior of the chamber to generate a plasma from the supplied etching gas and etching a first silicon-containing film that is arranged on a second silicon-containing film covering an electrode formed on a workpiece using the plasma generated from the etching gas..
Tokyo Electron Limited

Core for stationary induction apparatus

The invention provides a core for a stationary induction apparatus including an amorphous core formed of an amorphous thin magnetic strip arranged inside the core, a silicon steel sheet core formed of a silicon steel sheet arranged on a side surface of the amorphous core, a wear plate arranged on the outermost peripheral surface of the silicon steel sheet core, an amorphous core frame arranged around the amorphous core including a space between the amorphous core and the silicon steel sheet core, and a support frame which supports and fixes the amorphous core and the silicon steel sheet core via the wear plate.. .
Hitachi, Ltd.

Fully ceramic capsulated nuclear fuel composition containing three-layer-structured isotropic nuclear fuel particles with coating layer having higher shrinkage than matrix, material thereof and preparing the same

The present invention relates to a method for preparing a fully ceramic capsulated nuclear fuel material containing three-layer-structured isotropic nuclear fuel particles coated with a ceramic having a composition which has a higher shrinkage than a matrix in order to prevent cracking of ceramic nuclear fuel, wherein the three-layer-structured nuclear fuel particles before coating is included in the range of between 5 and 40 fractions by volume based on after sintering. More specifically, the present invention provides a composition for preparing a fully ceramic capsulated nuclear fuel containing three-layer-structured isotropic particles coated with the substance which includes, as a main ingredient, a silicon carbine derived from a precursor of the silicon carbide wherein a condition of Δlc>Δlm at normal pressure sintering is created, where the sintering shrinkage of the coating layer of the three-layer-structured isotropic nuclear fuel particles is Δlc and the sintering shrinkage of the silicon carbide matrix is Δlm; material produced therefrom; and a method for manufacturing the material.
Kepco Nuclear Fuel Co., Ltd.

Sensing amplifier comprising fully depleted silicon-on-insulator transistors for use in flash memory systems

The present invention relates to a flash memory system comprising one or more sense amplifiers for reading data stored in flash memory cells. The sense amplifiers utilize fully depleted silicon-on-insulator transistors to minimize leakage.
Silicon Storage Technology, Inc.

Data processing system to implement wiring/silicon blockages via parameterized cells

A data processing system to implement wiring/silicon blockages via parameterized cells (pcells) includes a front end-of-line placement/blockage (feol p/b) controller to generate a placement blockage based on an input parameter corresponding to a physical design of an integrated circuit (ic). The feol p/b outputs a placement blockage parameter that is stored in a wire track allocation database to indicate the placement blockage.
International Business Machines Corporation

Quantum dot, color conversion panel, and display device including the same

A quantum dot, a color conversion panel, and a display device, the quantum dot including a core; and a shell layer positioned outside of the core, wherein at least one of the core and the shell layer is doped with aluminum, silicon, titanium, magnesium, or zinc, and the core includes a group iii-v compound.. .
Korea Advanced Institute Of Science And Technology

Electrode structure for silicon photonics modulator

The purpose of the present invention is to allow a silicon photonics modulator to be operated at high speed with high frequency by providing an electrode structure for the small multichannel high-density silicon photonics modulator. This electrode structure for a silicon photonics modulator includes, on the planar surface of a silicon substrate, a first layer for forming a plurality of bias electrical wirings, and a second layer formed by aligning each of a plurality of ground electrode portions and each electrical wiring in the first layer..
Photonics Electronics Technology Research Association

Self-tuned silicon-photonic wdm transmitter

An optical transmitter includes: a set of reflective silicon optical amplifiers (rsoas), a set of ring modulators, a shared broadband reflector, a set of intermediate waveguides, and a shared waveguide. Each intermediate waveguide channels light from an rsoa in proximity to an associated ring modulator to cause optically coupled light to circulate in the associated ring modulator.
Oracle International Corporation

Dual-use laser source comprising a cascaded array of hybrid distributed feedback lasers

The disclosed embodiments provide a laser source comprising a silicon waveguide formed in a silicon layer, and a cascaded array of hybrid distributed feedback (dfb) lasers formed by locating sections of iii-v gain material over the silicon waveguide. Each dfb laser in the cascaded array comprises a section of iii-v gain material located over the silicon waveguide, wherein the section of iii-v gain material includes an active region that generates light, and a bragg grating located between the iii-v gain material and the silicon waveguide.
Oracle International Corporation

Optical polarizing filter

An optical filter may include a substrate. The optical filter may include a set of alternating high refractive index layers and low refractive index layers disposed onto the substrate to polarization beam split incident light.
Viavi Solutions Inc.

Lens assembly including a silicone fresnel lens

A lens assembly and a method of making the assembly are described. The lens assembly includes a first lens and a second lens slidably coupled with the first lens.
Oculus Vr, Llc

Hybrid lens with a silicone fresnel surface

A method for making a hybrid lens includes providing, in a mold having a first fresnel pattern, (i) a first lens and (ii) a silicone material comprising silicone and curing the silicone material in the mold to form a hybrid fresnel lens. The cured silicone material is mechanically coupled with the first lens; and the cured silicone material has a second fresnel pattern that corresponds to the first fresnel pattern.
Oculus Vr, Llc

Reflective optical element with high stiffness substrate

A high stiffness substrate for optical elements is described. The substrate includes a graphite finishing layer and a non-oxide ceramic base substrate.
Corning Incorporated

Item having optimized adhesive properties and comprising a silicon organic layer

An item including a substrate having at least one main surface coated with an interference coating including: a layer a with refractive index less than or equal to 1.65 and obtained via vacuum deposition assisted by an ion source made of at least one organosilicon compound a and making direct contact with layer a, layer b having a refractive index greater than 1.65 and is obtained via vacuum deposition assisted by an ion source made of at least one metal oxide and at least one organosilicon compound b, layer b containing at least one metal oxide having a refractive index greater than or equal to 1.8, or a layer c that includes a silicon oxide, has a thickness less than or equal to 15 nm, and makes direct contact with a layer e that includes at least one metal oxide having a refractive index greater than or equal to 1.8.. .
Essilor International

Calibration curve determination method, carbon concentration measurement method, and silicon wafer-manufacturing method

A carbon concentration can be measured using a small number of calibration curves even for a silicon wafer containing oxygen at a high concentration. A calibration curve determination method includes determining calibration curves using data sets each including a plurality of data, each data including irradiation dose, oxygen concentration, carbon concentration, and luminescence intensity, the data of each data set having the same irradiation dose and the same oxygen concentration, and the data sets being different in at least one of the irradiation dose and the oxygen concentration, selecting one or more combinations each being a pair of the calibration curves which are equal to each other in the irradiation dose and different from each other in the oxygen concentration, and obtaining a difference between slopes of the paired calibration curves on a log-log plot for each combination..
Globalwafers Japan Co., Ltd.

Thermal-type flow rate sensor

In a conventional air flow meter, in the case of foreign matter having a large particle diameter, the inertia thereof is used as a measure to prevent contact with a detection element, but for foreign matter having a particle diameter of 10 μm or less and an extremely small mass, the inertia thereof inside a bypass structure has almost no effect, and the foreign matter can adhere to the detection element. Ac dust or the like defined by the sae standard j726c in the u.s.
Hitachi Automotive Systems, Ltd.

Silicon steel bar checking device

A silicon steel bars checking device includes a top board, a bottom board, a block unit and multiple bolts. A room is defined between the top board, the bottom board and the block unit.
Nishoku Technology Inc.

Silicon ingot

A silicon ingot has opposite ends. A specific resistance, measured along an axis between the opposite ends of the silicon ingot, has at least one point of inflection where a concavity of the specific resistance changes along the axis.
Infineon Technologies Ag

Method for manufacturing silicon nitride thin film using plasma atomic layer deposition method

The present invention relates to a method for manufacturing a silicon nitride thin film using a plasma atomic layer deposition method and, more particularly, the purpose of the present invention is to provide a method for manufacturing a silicon nitride thin film including a high quality si—n bond under the condition of lower power and film-forming temperature, by applying an aminosilane derivative having a specific si—n bond to a plasma atomic layer deposition method.. .
Dnf Co., Ltd.

Precursor polyelectrolyte complexes compositions

The invention relates to compositions and methods of treatment employing compositions comprising polyelectrolyte complexes. The compositions include a water-soluble first polyelectrolyte bearing a net cationic charge or capable of developing a net cationic charge and a water-soluble second polyelectrolyte bearing a net anionic charge or capable of developing a net anionic charge.
The Clorox Company

Silicone surfactant, and silicone-dissolvative cleaner containing the same

Wherein “a” represents an ionic group selected from the group consisting of a sulfonic ion, a carboxylic ion, and a quaternary ammonium cation; and b represents a counter-ion to “a” and is selected from an alkali metal ion and a halide ion.. .

Wavelength conversion member, phosphor sheet, white light source device, and display device

Provided is a wavelength conversion member that can be produced at low cost and can suppress temporal variation in the chromaticity of light when used in a light source device. The wavelength conversion member contains: a phosphor that performs wavelength conversion of at least a portion of incident light and releases emitted light of a different wavelength to the incident light; a light diffusing element that diffuses either or both of the incident light and the emitted light; and a base material that holds the light diffusing element.
Dexerials Corporation

Slurry composition for cmp and polishing method using same

Provided are a slurry composition for cmp and a polishing method using the same, in which polishing can be performed by freely adjusting the selectivity ratio of a silicon oxide film, a silicon nitride and a polysilicon film through control of the amounts of additive and solvent, and thus the slurry composition can be efficiently applied to the process of manufacturing a semiconductor, requiring selective removal of a silicon nitride film and a polysilicon film relative to a silicon oxide film.. .
Skc Co., Ltd.

Silicone coatings

Coating compositions including about 50-80% by weight of a water-based silicone elastomer composition, about 0.5-4.0% by weight of a silane adhesion promoter, about 0.02-0.5% by weight of a silicone surfactant, and about 10-50% by weight water are disclosed herein. Also included are methods of preparing the coating compositions and methods of using the coating compositions..
Gaco Western, Llc

Water-repellant and oil-repellant coating composition and transparent film

The present invention aims to provide a water-repellant and oil-repellant coating composition which has good water-repellant and oil-repellant characteristics and further improves abrasion resistance, and a transparent film produced therefrom. The present invention is a water-repellant and oil-repellant coating composition comprising a first organic silicon compound (a) in which a fluorine-containing group having a perfluoroalkyl group or a perfluoropolyether group on the free end side thereof and a hydrolyzable group are bonded to a silicon atom thereof, and a second organic silicon compound (b) that is a hydrolyzable silane oligomer or a compound in which a carbon fluoride-containing group and a hydrolyzable group are bonded to a silicon atom thereof and that has a vapor pressure at 100° c.
Sumitomo Chemical Company, Limited

Method for producing organosilicon compounds having amino groups

The object of the invention is therefore to provide a method for the preparation of amino-functional polyorganosiloxanes, in which (a) organosiloxanes containing si—oh groups are reacted with (b) at least stoichiometric amounts of monoalkoxy(aminoalkyl) silanes with respect to the si—oh groups, wherein catalytically active additives selected from acid, base or metal-organic compound are used in amounts of less than 0.1 ppm acid, less than 30 ppm base and less than 0.4% metal-organic compound.. .
Wacker Chemie Ag

Novel organic silicon compound, surface treatment agent containing same, resin composition containing same, and gel or cured product of same

An organic silicon compound is disclosed which is represented by a formula : (r13sio)3sir2-[sir32o]y[sir32]w-r4-r5, wherein each of r1 and r3 is a group independently selected from the group consisting of alkyl groups, alkenyl groups, aryl groups, aralkyl groups and alkoxy groups having 1 to 20 carbon atoms, r2 is a divalent hydrocarbon group or an oxygen atom, r4 is a divalent hydrocarbon group, or a direct bond to a silicon (si) atom, r5 is a monovalent group represented by (r6o)qr7(3-q)si or a monovalent hydrocarbon group having 1 to 20 carbon atoms, and each of r6 and r7 is a group independently selected from the group consisting of alkyl groups, alkenyl groups, aryl groups, aralkyl groups and alkoxy groups having 1 to 20 carbon atoms, and q is an integer between 1 and 3, y is an integer between 0 and 200, and w is 0 or 1.. .
Dow Corning Toray Co., Ltd.

Surface-modified glass fiber with bi-component core-sheath structure

Surface-modified glass fiber, comprising: a core made of a first glass fiber material; a surface layer that encloses the core completely in a sheath-like way; wherein the surface layer has a higher silicon dioxide percentage and a higher porosity compared to the core.. .
Isolite Gmbh

Protective sleeves for containers

Aspects of the invention include a sleeve or wrap for protecting a container. In certain embodiments, the sleeve or wrap is a protective encasement for protecting a container, such as a bottle.
Lifefactory, Inc.

Equipment system using organic silicone resin photoconverter to bond-package led by tandem rolling

An equipment system for bond-packaging an led using an organic silicone resin photoconverter by tandem rolling includes a protective film removing apparatus used for removing a protective film on one side of a photoconversion sheet with protective films on both sides and a roll-bonding apparatus for packaging a flip chip led array by using the photoconversion sheet containing a protective film on a single side, to form led package elements. The protective film removing apparatus includes a photoconversion sheet freezing part (2-1, 2-2), a traction part for pulling and removing a protective film on a single side of the frozen photoconversion sheet, and a photoconversion sheet rewarming part (4-1, 4-2) that are sequentially connected and disposed.
Jiangsu Cherrity Optronics Co., Ltd

Layered silicon and stacking of microfluidic chips

An apparatus for sorting macromolecules includes a first chip including a channel formed in a first side of the first chip and having at least one monolithic sorting structure for sorting macromolecules from the sample fluid. A first set of vias formed in the first chip has openings in a second side of the first chip, the sample fluid being provided to the sorting structure through the first set of vias.
International Business Machines Corporation

Polysilicon manufacturing apparatus

Provided is a polysilicon manufacturing apparatus including a reactor disposed on a base plate to form a reaction chamber, a pair of electrical feedthroughs installed on the base plate to be extended to the inside of the reaction chamber, rod filaments installed on the electrical feedthroughs in the reaction chamber and connected to each other by a rod bridge at the upper end to form a silicon rod by chemical vapor deposition of source gas introduced to a gas inlet, and a cooling jacket inserted to a through-hole provided at the upper side of the reactor to be supported to the base plate, connected to a gas outlet formed on the base plate by forming a gas passage discharging the gas after reaction, and introducing and circulating a low-temperature coolant to a coolant passage from the outside of the reactor by forming the coolant passage at the outside of the gas passage to discharge a high-temperature coolant to the outside of the reactor.. .
Hanwha Chemical Corporation

Tunable adsorbents

The present invention relates to a method for modifying the crystalline inorganic framework of an adsorbent with coatings to provide rate selectivity for one gas over others is described. The method described herein narrows the effective pore size of crystalline porous solids with pores less than about 5a for rate selective separations.

Oxidation dyeing agent with special hydroxy-terminated, amine-functionalized silicone polymers

The present disclosure relates to a cosmetic agent for dyeing keratinous fibers, more particularly human hair, containing at least one special hydroxy-terminated, amine-functionalized silicone polymer and at least one oxidative dye precursor and/or one partially-oxidative dye, the use of the at least one hydroxy-terminated, amine-functionalized silicone polymer leading to improved nourishment of the keratinous fibers with extremely low color shift at the same time. The present disclosure also relates to a corresponding kit-of-parts, as well as a method for dyeing keratinous fibers.
Henkel Ag & Co. Kgaa

Cosmetic

A cosmetic is disclosed, which provides easy-to-spread lightness at the start of application, in the course of application, and at the end of application, which stays smooth and soft when and after it is applied, and provides dry touch without oiliness during use. The cosmetic includes a silicone oil in an amount of 50 mass % or more relative to the total mass of the cosmetic, and has a viscosity of 10000 mpa·s or less.
Shiseido Company, Ltd.

Essence of alayah - hair seen

The essence of alayah—hair seen (eoa), is a hair sheen or hair polish that is specially designed and formulated to add a brilliant sheen, gloss, or shine to any type hair style, and may be used to as a final touch to top off a hair style. The eoa consist of a chemical mixture of cyclomethicone and dimethicone, and/or any other silicone or oil based chemical mixture; and said chemical mixture has a final viscosity approximately equal to that of water, or a viscosity that enables the chemical mixture to be sprayed as a mist onto the hair and not weigh down the hair as does most oil sprays.
Mcleanics Technology Corporation

Stable vitamin c compositions

Disclosed is a composition comprising ascorbic acid or a derivative thereof, a silicone containing compound, and an essential oil, wherein at least 50% of the initial amount of the ascorbic acid in the composition remains stable when the composition is stored for at least 1 month at room temperature. The composition can be non-aqueous..
Mary Kay Inc.

Dental treatment devices comprising silicone-like elastomeric material

Non-customized dental treatment trays used to provide a desired treatment are formed from elastomeric silicone or silicone-like material. They may be molded from a two-part liquid silicone composition or a silicone-like tpe material (e.g., preferably sebs and/or versaflex thermoplastic elastomer).
Ultradent Products, Inc.

Device for cleaning an exercise mat

An exercise mat cleaning device includes a liquid dispensing container for holding a sanitizing solution, and a pump sprayer fitted to a top of the container. A longitudinal edge of the exterior wall structure of the container is fitted with a squeegee blade formed of a rubber or silicon material.

Semiconductor processing apparatus with protective coating including amorphous phase

Embodiments of the invention relate to compositions including a yttrium-based fluoride crystal phase, or a yttrium-based oxyfluoride crystal phase, or an oxyfluoride amorphous phase, or a combination of these materials. The compositions may be used to form a solid substrate for use as a semiconductor processing apparatus, or the compositions may be used to form a coating which is present upon a surface of substrates having a melting point which is higher than about 1600°, substrates such as aluminum oxide, aluminum nitride, quartz, silicon carbide and silicon nitride, by way of example..
Ip Improved Products By Breeding Ug

Jsr Life Sciences Corporation

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Shin-etsu Chemical Co., Ltd.

. .

Low profile packaging and assembly of a power conversion system in modular form

Embedded pcb (printed circuit board) is used for the packaging and assembly of a low profile power conversion system module that can be employed in space constrained environment of small computer/electronic systems. The low profile power conversion system module may include an embedded pcb, a power silicon device embedded within the pcb, a magnetic component which is either embedded within the pcb or disposed on the pcb, or input/output terminals disposed on the side of the embedded pcb.
Apple Inc.

Piezo-actuated mems resonator with surface electrodes

A microelectromechanical system (mems) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes..
Sitime Coporation

Resonance device and manufacturing method therefor

A resonance device that includes a lower cover formed from non-degenerate silicon; a resonator having a degenerate silicon substrate with a lower surface facing the lower cover, and including first and second electrode layers laminated on the substrate with a piezoelectric film formed therebetween and having a surface opposing an upper surface of the substrate. Moreover, the lower surface of the substrate has an adjustment region where a depth or height of projections and recesses formed on the surface is larger than that in another region of the lower surface of the substrate or is a region where an area of the projections and recesses is larger than that in the other region of the lower surface of the substrate..
Murata Manufacturing Co., Ltd.

Resonant cavity strained group iii-v photodetector and led on silicon substrate and method to fabricate same

A structure includes an optoelectronic device having a group iv substrate (e.g., si); a buffer layer (e.g. Sige) disposed on the substrate and a first distributed bragg reflector (dbr) disposed on the buffer layer.
International Business Machines Corporation

Mixture paste for negative electrode of lithium ion secondary battery, negative electrode for lithium ion secondary battery, producing negative electrode for lithium ion secondary battery, and lithium ion secondary battery

The objective of the present invention is to provide a mixture paste that is for the production of a negative electrode for a lithium ion secondary battery, that is not prone to cycle deterioration as a result of changes in volume, and that is not prone to decreases in initial charge/discharge efficiency as a result of reduction of a polyimide during charging. This objective is achieved by a mixture paste for a negative electrode of a lithium ion secondary battery comprising: a binder resin composition that comprises a polyamic acid and/or a corresponding polyimide, said polyamic acid being obtained from a diamine compound and a tetracarboxylic acid dianhydride, and said diamine compound comprising a diamine represented by formula (i) or (ii); and a negative electrode active substance containing a silicon oxide represented by siox (0.5≤x≤1.5) and carbon particles..
Mitsui Chemicals, Inc.

Photocurable resin composition, fuel cell, and sealing method

The present invention has an object to provide a photocurable resin composition which can be quickly cured by irradiation with active energy rays such as ultraviolet rays and achieves excellent adhesion to an electrolyte membrane having properties difficult to bond. Specifically, provided is a photocurable resin composition containing the following (a) to (c) ingredients: (a) ingredient: a polymer having a polyisobutylene backbone containing a —[ch2c(ch3)2]— unit, the polymer having one or more (meth)acryloyl groups; (b) ingredient: a photo-radical polymerization initiator; and (c) ingredient: one or more compounds selected from the group consisting of silicone oligomers each having one or more alkoxy groups and one or more (meth)acryloyl groups, silicone oligomers each having one or more alkoxy groups and one or more amino groups, and silane compounds each having one or more isocyanate groups..
Threebond Co., Ltd.

Negative electrode active material for non-aqueous electrolyte secondary battery, negative electrode for non-aqueous electrolyte secondary battery, non-aqueous electrolyte secondary battery, and producing negative electrode material for non-aqueous electrolyte secondary battery

A negative electrode active material for a non-aqueous electrolyte secondary battery, wherein: negative electrode active material particles that contain a silicon compound (siox: 0.5≤x≤1.6) having a carbon coating on a surface, wherein the carbon coating exhibits a g′-band peak at a raman shift in a range of 2600 cm−1 to 2760 cm−1 and a g-band peak at a raman shift in a range of 1500 cm−1 to 1660 cm−1 in a raman spectrum obtained by raman spectrometry, and the g′-band peak and the g-band peak satisfy 0<ig′/ig≤0.6 where ig′ and ig are intensities of the g′-band peak and the g-band peak, respectively. This provides a negative electrode active material having a high capacity retention rate and high initial efficiency..
Shin-etsu Chemical Co., Ltd.

Titanium oxide compound, and electrode and lithium ion secondary battery each manufactured using same

A titanium oxide compound according to the present invention comprises bronze-type titanium oxide or titanium oxide mainly composed of bronze-type titanium oxide, and contains calcium and/or silicon. The titanium oxide compound contains 0.005 to 2.5 mass % inclusive of calcium or 0.15 to 0.55 mass % inclusive of silicon, or contains 0.005 to 1.2 mass % inclusive of calcium and 0.15 to 0.2 mass % inclusive of silicon, or contains 0.005 to 0.1 mass % inclusive of calcium and 0.15 to 0.5 mass % inclusive of silicon..
Kubota Corporation

Surface modification of silicon particles for electrochemical storage

Silicon particles for active materials and electro-chemical cells are provided. The active materials comprising silicon particles described herein can be utilized as an electrode material for a battery.
Enevate Corporation

Negative electrode and manufacturing same

The present invention relates to a negative electrode and a method for manufacturing the same. Specifically, the present invention provides a negative electrode comprising a current collector, a first active material layer formed on the current collector, and a second active material layer formed on the first active material layer, wherein the first active material layer comprises carbon-based negative electrode active material particles, and the second active material layer comprises silicon nitride.
Lg Chem, Ltd.

Secondary battery-use anode and manufacturing the same, secondary battery and manufacturing the same, battery pack, electric vehicle, electric power storage system, electric power tool, and electronic apparatus

An anode includes an anode current collector and an anode active material layer provided on the anode current collector, and the anode active material layer includes a first anode active material, a second anode active material, and an anode binder. The first anode active material includes a first central portion and a first coating portion provided on a surface of the first central portion.
Murata Manufacturing Co., Ltd.

Oled packaging method and oled package structure

The present invention provides an oled packaging method and an oled package structure. The oled packaging method of the present invention is such that a silicon-doped diamond-like carbon layer and a diamond-like carbon scattering layer are both provided in an oled package structure so that the silicon-doped diamond-like carbon layer may provide an effect of blocking external moisture and oxygen and the diamond-like carbon scattering layer is used to provide an effect of increasing light transmission rate, whereby it is possible to greatly extend the service life of the oled device and also to ensure a relatively high light output efficiency of the oled device.
Wuhan China Star Optoelectronics Technology Co., Ltd.

Silicon-based large-sized oled image transceiving device and manufacturing method

A silicon-based large-sized oled image transceiving device comprises an oled micro-display control and power supply unit, an oled row driver, an oled column driver, an image sensor control and power supply unit, an image sensor column signal output unit, a signal processing unit, an image sensor row driver, an oled display region and a light-sensitive region, each of them is formed on an independent exposure unit or an independent exposure area divided into at least two exposure units, and the device is formed by splicing the exposure units together after exposure.. .
Shenzhen Dianbond Technology Co., Ltd.

Monocrystalline magneto resistance element, producing the same and using same

To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a b2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a b2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16..
National Institute For Materials Science

Memory cell structure, manufacturing a memory, and memory apparatus

A memory cell includes: a transistor that uses a first diffusion layer formed in a bottom portion of a concave portion formed by processing a silicon substrate into a groove shape, and a second diffusion layer formed in upper end portions of two opposing sidewall portions of the concave portion, to form channels at portions between the first diffusion layer and the second diffusion layer in the two sidewall portions; and a memory element that is disposed below the first diffusion layer. The first diffusion layer is electrically connected to the memory element via a contact formed after the silicon substrate is thinned..

Electronic device and fabricating the same

An electronic device may include a semiconductor memory, and the semiconductor memory may include a substrate; an interlayer dielectric layer formed over the substrate and patterned to include a contact hole; a lower contact structure formed over the substrate in the contact hole; and a variable resistance element formed over and electrically coupled to the lower contact structure, wherein the lower contact structure comprises: a spacer formed on sidewalls of the contact hole in the interlayer dielectric layer and including a material having a lower etch rate than that of silicon nitride (sin); a contact plug filling a portion of the contact hole; and a contact pad formed over the contact plug and filling a remaining portion of the contact hole.. .
Sk Hynix Inc.

Resonant cavity strained iii-v photodetector and led on silicon substrate

An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed bragg reflector stack of iii-v semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of iii-v semiconductor material present on the first distributed bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer.
International Business Machines Corporation

Resonant cavity strained iii-v photodetector and led on silicon substrate

An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed bragg reflector stack of iii-v semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of iii-v semiconductor material present on the first distributed bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer.
International Business Machines Corporation

Method for fabricating multijunction solar cells on bulk gesi substrate

A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.. .
Solaero Technologies Corp.

Optoelectronic device having photodiodes for different wavelengths and process for making same

An optoelectronic device includes: a substrate made of a first material; a region in the substrate, the region being made of a second material different from the first material; an n-well in the region made of the second material; and a photo diode formed in the region by ion implantation. The second material for example is silicon germanium (si1-xgex) or silicon carbide (si1-ycy), wherein 0<x, y<1..
Pixart Imaging Incorporation

Multi-junction photoelectric conversion device and photoelectric conversion module

A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer.
Kaneka Corporation

Multijunction solar cells on bulk gesi substrate

A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.. .
Solaero Technologies Corp.

Functional metal oxide based microelectronic devices

A microelectronic device having a functional metal oxide channel may be fabricated on a microelectronic substrate that can be utilized in very large scale integration, such as a silicon substrate, by forming a buffer transition layer between the microelectronic substrate and the functional metal oxide channel. In one embodiment, the microelectronic device may be a microelectronic transistor with a source structure and a drain structure formed on the buffer transition layer, wherein the source structure and the drain structure abut opposing sides of the functional metal oxide channel and a gate dielectric is disposed between a gate electrode and the functional metal oxide channel.
Intel Corporation

Fabrication of multi-channel nanowire devices with self-aligned internal spacers and soi finfets using selective silicon nitride capping

Methods of selectively nitriding surfaces of semiconductor devices are disclosed. For example, a hardmask is formed on the top portion of the fins to create soi structure.
Intel Corporation

Semiconductor device, semiconductor device manufacturing method, inverter circuit, driving device, vehicle, and elevator

A semiconductor device according to the embodiments described herein includes a silicon carbide layer and a silicon oxide layer. The silicon oxide layer is disposed on the silicon carbide layer and contains at least one element selected from a group of phosphorus (p), arsenic (as), antimony (sb), and bismuth (bi).
Kabushiki Kaisha Toshiba

Organic light emitting display panel and manufacturing method thereof

The present disclosure discloses an oled panel, including: a substrate and a driving thin film transistor, a switching thin film transistor, a storage capacitor, an organic light emitting device, and a light emitting device formed on the substrate, an external voltage signal is stored in the storage capacitor via the switching thin film transistor, the external voltage signal controls a magnitude of on-current of the driving thin film transistor to control the gray scale of the organic light emitting device. The present disclosure further discloses a manufacturing method of oled panel.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Advanced processing apparatus comprising a plurality of quantum processing elements

The present disclosure provides a scalable architecture for an advanced processing apparatus for performing quantum processing. The architecture is based on an all-silicon cmos fabrication technology.
Newsouth Innovations Pty Limited

Methods for high-dynamic-range color imaging

A method for manufacturing a high-dynamic-range color image sensor includes (a) depositing a color filter layer on a silicon substrate having a photosensitive pixel array with a plurality of first pixels and a plurality of second pixels, to form (i) a plurality of first color filters above a first subset of each of the plurality of first pixels and the plurality of second pixels and (ii) a plurality of second color filters above a second subset of each of the plurality of first pixels and the plurality of second pixels, wherein thickness of the second color filters exceeds thickness of the first color filters, and (b) depositing, on the color filter layer, a dynamic-range extending layer including grey filters above the second pixels to attenuate light propagating toward the second pixels, combined thickness of the color filter layer and the dynamic-range extending layer being uniform across the photosensitive pixel array.. .
Omnivision Technologies, Inc.

Accommodating imperfectly aligned memory holes

Methods of forming 3-d flash memory cells are described. The methods allow the cells to be produced despite a misalignment in at least two sections (top and bottom), each having multiple charge storage locations.
Applied Materials, Inc.

Accommodating imperfectly aligned memory holes

Methods of forming 3-d flash memory cells are described. The methods allow the cells to be produced despite a misalignment in at least two sections (top and bottom), each having multiple charge storage locations.
Applied Materials, Inc.

Split gate non-volatile flash memory cell having metal gates

A memory device including a silicon substrate having a planar upper surface in a memory cell area and an upwardly extending silicon fin in a logic device area. The silicon fin includes side surfaces extending up and terminating at a top surface.
Sillicon Storage Technology, Inc.

Semiconductor memory device and manufacturing method thereof

A semiconductor memory device and a manufacturing method thereof are provided. At least one bit line structure including a first metal layer, a bit line capping layer, and a first silicon layer located between the first metal layer and the bit line capping layer is formed on a semiconductor substrate.
Fujian Jinhua Integrated Circuit Co., Ltd.

Finfet esd device with schottky diode

A fin field effect transistor (finfet) esd device is disclosed. The device may include: a substrate; a silicon-controlled rectifier (scr) over the substrate, the scr including: a p-well region over the substrate; an n-well region laterally abutting the p-well region over the substrate; a first p+ doped region over the p-well region; a first n+ doped region over the p-well region; and a second n+ doped region over the p-well region; and a schottky diode electrically coupled to the n-well region, wherein the schottky diode spans the n-well region and the p-well region, and wherein the schottky diode controls electrostatic discharge (esd) between the second n+ doped region and the n-well region..
Globalfoundries Inc.

Metal-free frame design for silicon bridges for semiconductor packages

Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semi-conductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter.
Intel Corporation

Guard ring design enabling in-line testing of silicon bridges for semiconductor packages

Guard ring designs enabling in-line testing of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon.
Intel Corporation

Alternative surfaces for conductive pad layers of silicon bridges for semiconductor packages

Alternative surfaces for conductive pad layers of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having a lower insulating layer disposed thereon.
Intel Corporation

System and electrical testing of through silicon vias (tsvs)

A substrate includes first and second semiconductor layers doped with opposite conductivity type in contact with each other at a pn junction to form a junction diode. At least one through silicon via structure, formed by a conductive region surrounded laterally by an insulating layer, extends completely through the first semiconductor layer and partially through the second semiconductor layer with a back end embedded in, and in physical and electrical contact with, the second semiconductor layer.
Stmicroelectronics S.r.l.

Tft backplane manufacturing method and tft backplane

The invention provides a manufacturing method for tft backplane, through forming an oxygen-containing a-si layer on the buffer layer and an oxygen-free a-si layer on the oxygen-containing a-si layer so that when using a boron induced spc to crystallize the a-si thin film, the contact interface between the a-si thin film and the buffer layer is the oxygen-containing a-si layer; because the nucleation is not easy to occur in oxygen-containing a-si layer during high temperature crystallization, the nucleation only occurs top-down in the boron doped layer on the upper surface of the a-si thin film for good die quality and thin film uniformity to achieve improve crystalline quality and uniformity. The tft backplane provided by the invention is made with simple process, wherein the crystalline quality and uniformity of the polysilicon layer is preferable, and can enhance the tft performance and the driving effect..
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Plasma etching method

A plasma etching method includes a first process of generating a first plasma from a first processing gas that contains fluorine-containing gas and hydrogen-containing gas, by using a first radio frequency power, to etch a laminated film including a first silicon-containing film layer and a second silicon-containing film layer that is different from the first silicon-containing film layer, with the generated first plasma; and a second process that is performed after the first process and includes generating a second plasma from a second processing gas that contains bromine-containing gas, by using a second radio frequency power, to etch the laminated film with the generated second plasma. Unevenness is formed at an interface between the first silicon-containing film layer and the second silicon-containing film layer in the first process, and the unevenness is removed in the second process..
Tokyo Electron Limited

Shaped etch profile with oxidation

Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon surface on a semiconductor substrate within a processing region of a semiconductor processing chamber.
Applied Materials, Inc.

Process for producing of polycrystalline silicon

The present invention relates to a process for producing of polycrystalline silicon, and the method includes (1) preparing a silicon-containing gas; (2) storing the silicon-containing gas in a storage tank; (3) depositing polycrystalline silicon by injecting the silicon-containing gas stored in the storage tank to a cvd reactor; (4) treating an off-gas emitted in the depositing step; and (5) injecting the gas treated in the treating step to the storage tank.. .
Oci Company Ltd.

Laser assisted sic growth on silicon

A heterojunction device is provided. The heterojunction device includes a silicon (si) substrate; and a film of silicon carbide (sic) deposited on a surface of the si substrate.
Board Of Trustees Of Michigan State University

Method of manufacturing silicon carbide epitaxial wafer

The present invention is aimed at providing a method of manufacturing a silicon carbide epitaxial wafer by which a plurality of silicon carbide epitaxial layers of a predetermined layer thickness can be precisely formed. In the present invention, a first n-type sic epitaxial layer is formed on an n-type sic substrate so that the rate of change in impurity concentration between the n-type sic substrate and the first n-type sic epitaxial layer will be greater than or equal to 20%.
Mitsubishi Electric Corporation

Polysilicon chip reclamation assembly and reclaiming polysilicon chips from a polysilicon cleaning apparatus

A polysilicon chip reclamation assembly includes a polysilicon cleaning apparatus configured to clean a plurality of bodies of polysilicon. Also included is a plurality of polysilicon chips generated from the bodies of polysilicon during cleaning thereof, wherein each of the plurality of polysilicon chips has a longest dimensional length ranging from 0.1 mm to 25.0 mm.
Hemlock Semiconductor Corporation

Method and forming device quality gallium nitride layers on silicon substrates

Atomic layer deposition (ald) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° c. The substrate and film materials are preferably matched to take advantage of domain matched epitaxy (dme).
Ultratech, Inc.

Monocrystalline silicon sputtering target

A sputtering target formed from monocrystalline silicon is provided, wherein a sputter surface of the sputtering target is a plane inclined at an angle that exceeds 1° and is less than 10° from a {100} plane. The sputtering target formed from monocrystalline silicon provides a sputtering target which yields superior mechanical strength as well as exhibiting a sputter performance which is equivalent to that of a {100} plane.
Jx Nippon Mining & Metals Corporation

Solar cell front side silver paste doped with modified grapheme and preparation method thereof

A solar cell front side silver paste doped with modified graphene and its preparation method are disclosed. The solar cell front side silver paste doped with modified graphene comprises by weight 0.1-5 parts of modified graphene, 88-91 parts of silver powder, 5-15 parts of organic binder, 1-5 parts of organic solvent, 1-3 parts of glass powder, wherein the modified graphene is a surface modified graphene.
Nantong T-sun New Energy Co.,ltd.

Composite, carbon composite including the composite, electrode, lithium battery, electroluminescent device, biosensor, semiconductor device, and thermoelectric device including the composite and/or the carbon composite

A composite including: silicon (si); a silicon oxide of the formula siox, wherein 0<x<2; and a graphene disposed on the silicon oxide.. .
Samsung Electronics Co., Ltd.

Semiconductor structures with deep trench capacitor and methods of manufacture

An integrated finfet and deep trench capacitor structure and methods of manufacture are disclosed. The method includes forming at least one deep trench capacitor in a silicon on insulator (soi) substrate.
International Business Machines Corporation

Photosensitive resin composition, photosensitive dry film, photosensitive resin coating, and pattern forming process

A photosensitive resin composition comprising (a) a silicone-modified polybenzoxazole resin and (b) a photoacid generator which is decomposed to generate an acid upon exposure to radiation of 190-500 nm is coated onto a substrate to form a thick coating, which is exposed to radiation, baked, and developed to form a pattern. The resin coating is capable of forming a fine pattern and has improved crack resistance and other film properties, and reliability..
Shin-etsu Chemical Co., Ltd.

Optical fiber for silicon photonics

An optical fiber for efficient coupling of optical signals to photonic devices. The optical fiber includes a cl doped tapered core region with a changing outer diameter and changing maximum core refractive index to provide improved coupling at wavelength of interest to photonic devices.
Corning Incorporated

Online monitoring of production processes using electron paramagnetic resonance (epr)

Certain aspects of the present disclosure provide methods and apparatus for closed-loop control of a system using one or more electron paramagnetic resonance (epr) sensors located on-site. With such epr sensors, a change can be applied to the system, the epr sensors can measure the effect(s) of the change, and then adjustments can be made in real-time.
Microsilicon Inc.

Resin material, vinyl bag, polycrystalline silicon rod, polycrystalline silicon mass

According to the present invention, a resin material that has the following surface concentration of impurities is consistently used in production of polycrystalline silicon. Values obtained from quantitative analysis by icp-mass spectrometry using a 1 wt % nitric acid aqueous solution as an extraction liquid are: a phosphorous (p) concentration of 50 pptw or less; an arsenic (as) concentration of 2 pptw or less; a boron (b) concentration of 20 pptw or less; an aluminum (al) concentration of 10 pptw or less; a total concentration of 6 elements of iron (fe), chromium (cr), nickel (ni), copper (cu), sodium (na), and zinc (zn) of 80 pptw or less; a total concentration of 10 elements of lithium (li), potassium (k), calcium (ca), titanium (ti), manganese (mn), cobalt (co), molybdenum (mo), tin (sn), tungsten (w), and lead (pb) of 100 pptw or less..
Shin-etsu Chemical Co., Ltd.

Polysilicon preparation apparatus

The present invention provides a polysilicon manufacturing apparatus that can prevent generation of popcorns in the entire cvd reaction process by cooling an upper portion of a silicon rod where a rod bridge is disposed. A polysilicon manufacturing apparatus according to an exemplary embodiment of the present invention includes: a reactor provided on a base and forming a reaction chamber; a pair of feedthroughs provided in the base and extending into the reaction chamber; rod filaments provided in the feedthroughs in the reaction chamber, connected with each other at upper ends thereof through a rod bridge, and where a silicon rod of polysilicon is formed from a raw material gas through a chemical vapor deposition (cvd) process; and cooling spray nozzles spraying a cooling gas to the silicon rod formed as silicon deposited around the rod bridge and the rod filaments..
Hanwha Chemical Corporation

Organoamino-polysiloxanes for deposition of silicon-containing films

Organoamino-polysiloxanes, which have at least three silicon atoms, oxygen atoms, as well as an organoamino group, and methods for making the organoamino-polysiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-polysiloxanes are also disclosed..
Versum Materials Us, Llc

Sio2 thin film produced by atomic layer deposition at room temperature

A process of atomic layer deposition for the deposition of silicon oxide on a substrate, performed at room temperature, involving at least three precursors, being silicon tetrachloride, water and one lewis base agent, being in various instances ammonia. The process comprises the steps of exposing on the substrate during an exposure time (a) the one lewis base agent, (b) the silicon tetrachloride, and (c) the water.
Luxembourg Institute Of Science And Technology (list)

Steel sheet coated with a metallic coating based on aluminum

A steel sheet coated with a metallic coating is provided. The steel sheet includes from 2.0 to 24.0% by weight of zinc, from 7.1 to 12.0% by weight of silicon, optionally from 1.1 to 8.0% by weight of magnesium, and optionally additional elements chosen from pb, ni, zr, or hf, the content by weight of each additional element being less than 0.3% by weight, the balance being aluminum and optionally unavoidable impurities and residual elements.
Arcelormittal

Hypoeutectoid bearing steel

A steel alloy for bearings contains: 0.6 to 0.9 wt. % carbon, 0.1 to 0.5 wt.
Aktiebolaget Skf

Method for the manufacture of a hardened part which does not have lme issues

The present invention provides a method for the manufacture of a hardened part. The method includes the provision of a steel sheet pre-coated with a metallic coating including from 2.0 to 24.0% by weight of zinc, from 1.1 to 7.0% by weight of silicon, optionally from 1.1 to 8.0% by weight of magnesium when the amount of silicon is between 1.1 and 4.0%, and optionally additional elements chosen from pb, ni, zr, or hf, the content by weight of each additional element being less than 0.3% by weight, the balance being aluminum and unavoidable impurities and residuals elements, wherein the ratio al/zn is above 2.9.
Arcelormittal

Lubricating oil composition, defoaming lubricating oil, and defoaming agent composition

A lubricating oil composition including: a lubricant base oil; (a) a first defoaming agent obtainable by a process, the process including the step of: polymerizing (b) at least one defoaming agent monomer in (a) a polymerization solvent under coexistence of (c) a polymer soluble in the polymerization solvent; and (b) a second defoaming agent being a silicone defoaming agent.. .
Jxtg Nippon Oil & Energy Corporation

Rapid thickening of aminosilicones to promote emulsion stability and adhesion of uv-curable quantum dot enhancement film emulsions

The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures, an aminosilicone polymer, an organic resin, and a cation.
Nanosys, Inc.

Curable composition

A curable composition includes a (meth)acrylic acid ester polymer (a), wherein the (meth)acrylic acid ester polymer (a) includes a monomer and a macromonomer (a). The monomer includes a reactive silicon group represented by the general formula (1): —sir1ax3-a (1) (in the formula, r1 represents a substituted or unsubstituted hydrocarbon group with 1 to 20 carbon atoms, x each independently represents a hydroxyl group or a hydrolyzable group, and a represents 0 or 1.) and a polymerizable unsaturated group.
Kaneka Corporation

Coating material and laminate

A coating material capable of forming a film that is free of squeakiness and is less likely to suffer staining of clothing dye on the surface of a base such as a rubber molded article. The coating material contains fluororesin primary particles having an average particle size of 0.2 to 200 nm, a curable silicone resin in an amount of 0.1 to 250 mass % relative to the fluororesin primary particles, and water..
Daikin Industries, Ltd.

Maltodextrin-based paint booth protective coatings

In various embodiments novel coatings for the protection of a paint booth are provided. In certain embodiments the coatings comprise a maltodextrin, a humectant; and ph adjuster.
Cal-west Specialty Coatings, Inc.

Silicone rubber syntactic foam

The present invention relates to a novel silicone rubber syntactic foam and the silicone precursor of said foam.. .
Elkem Silicones Usa Corp.

Unvulcanized liquid or solid silicone rubber and using liquid or solid silicone rubber in an injection method

An unvulcanized liquid or solid silicone rubber containing a proportion of a filler material that expands at an increased temperature.. .
Universität Kassel

Silicone-modified polybenzoxazole resin and making method

A silicone-modified polybenzoxazole resin comprising repeating units of formulae (1a) and (1b) is prepared by addition polymerization. R1 to r4 are a c1-c8 monovalent hydrocarbon group, m and n are integers of 0-300, r5 is c1-c8 alkylene or phenylene, a and b are positive numbers of less than 1, a+b=1, and x1 is a divalent linker of formula (2).
Shin-etsu Chemical Co., Ltd.

Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films

Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed..
Versum Materials Us, Llc

Increasing the density of a bond coat

An example method may include applying a bond coat comprising silicon or a silicon alloy on a surface of a ceramic or ceramic matrix composite substrate, where the bond coat comprises a plurality of pores; infiltrating a precursor into at least some pores of the plurality of pores; and heat-treating the bond coat and the precursor, where after heat-treating a porosity of the bond coat is less than about 5 vol. %, and where after heat-treating, the bond coat is substantially free of continuous porosity extending through a thickness of the bond coat..
Rolls-royce High Temperature Composites, Inc.

Electrically-functional optical target

In one example, a printhead having an electrically-functional optical target. The printhead includes a substrate.
Hewlett-packard Development Company, L.p.

Aluminum alloy, extruded tube formed from aluminum alloy, and heat exchanger

An aluminum alloy for heat exchanger applications and a method for fabricating a billet comprising the aluminum alloy are disclosed. The aluminum alloy includes an amount of silicon between 0.01 and 0.08 wt %; an amount of iron between 0.03 and 0.12 wt %; an amount of manganese 0.50 and 0.90 wt %; an amount of titanium 0.1 and 0.15 wt %; an amount of zinc between 0.05 and 0.10 wt %; no more than 0.03 wt % copper; no more than 0.008 wt % nickel; no more than 0.03 wt % other impurities; and a balance of aluminum.
Brazeway, Inc.

Olefin metathesis method using a catalyst containing silicon and molybdenum incorporated by means of at least two precursors

The invention relates to a process for the metathesis of olefins implemented with a catalyst comprising a mesoporous matrix and at least the elements molybdenum and silicon, said elements being incorporated into said matrix by means of at least two precursors of which at least one precursor contains molybdenum and at least one precursor contains silicon.. .
Ifp Energies Nouvelles

Modified siloxane composite membranes for heavy hydrocarbon recovery

Composite membranes include a polymer material that is selectively permeable to heavy (c3+) hydrocarbons over methane. The polymer material may be a modified poly(dimethylsilane) having a backbone including dimethylsiloxyl monomers, substituted methylsiloxyl monomers, and internal-network monomers.
Saudi Arabian Oil Company

Dressing formulations to prevent and reduce scarring

Provided herein is a scar dressing formulation comprising a blend of a high molecular weight silicone elastomer crosspolymer and a silicone oil, wherein said silicone elastomer crosspolymer is in a volatile fluid. The formulation has a soft, silky feel without being greasy and dries quickly to form a durable, flexible scar dressing..
Tgb Pharma

Methods for making pharmaceutical solid dosage forms of spray-dried dispersions

A process for drying a spray dried dispersion, comprising: a) providing a spray-dried dispersion comprising particles wherein the particles comprise an active agent and a polymer and optionally one or more surfactants, the dispersion having an average particle diameter of less than about 100 m; b) blending an amount of silicon dioxide with the dispersion to form a dispersion-silicon dioxide blend, wherein the amount of silicon dioxide relative to the amount of dispersion is between about 0.5 and 2.0% by weight; c) drying the blend with a secondary dryer.. .
Merck Sharp & Dohme Corp.

Sol-gel phase-reversible hydrogel templates and uses thereof

Discrete microstructures of predefined size and shape are prepared using sol-gel phase-reversible hydrogel templates. An aqueous solution of hydrogel-forming material is covered onto a microfabricated silicon wafer master template having predefined microfeatures, such as pillars.
Akina, Inc.

Method of treating hair with a concentrated conditioner

A method of treating the hair including providing a concentrated hair care composition in a dispenser. The concentrated hair care composition includes one or more silicones, perfume, and from about 2% to about 10% high melting point fatty compounds.
The Procter & Gamble Company

Low viscosity hair care composition

This invention relates to a foamable concentrated hair care composition comprising an anionic surfactant and a co-surfactant. The hair care composition may further comprise a silicone, wherein the silicone particle size is less than about 10 microns.
The Procter & Gamble Company

Flexible silicon nanowire electrode

A method is presented for forming a nanowire electrode. The method includes forming a plurality of nanowires over a first substrate, depositing a conducting layer over the plurality of nanowires, forming solder bumps and electrical interconnections over a second flexible substrate, and integrating nanowire electrode arrays to the second flexible substrate.
International Business Machines Corporation

Flexible silicon nanowire electrode

A method is presented for forming a nanowire electrode. The method includes forming a plurality of nanowires over a first substrate, depositing a conducting layer over the plurality of nanowires, forming solder bumps and electrical interconnections over a second flexible substrate, and integrating nanowire electrode arrays to the second flexible substrate.
International Business Machines Corporation

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Polyphenyl ether resin composition and use thereof in high-frequency circuit substrate

The present invention relates to a polyphenyl ether resin composition and a use thereof in a high-frequency circuit substrate. The polyphenyl ether resin composition comprises a vinyl-modified polyphenyl ether resin and an organic silicon resin containing unsaturated double bonds and having a three-dimensional net structure.
Shengyi Technology Co., Ltd.

Control power converters with inverter blocks with silicon carbide mosfets

Systems and methods for operating a power converter with a plurality of inverter blocks with silicon carbide mosfets are provided. A converter can include a plurality of inverter blocks.
General Electric Company

Resonant cavity strained group iii-v photodetector and led on silicon substrate and method to fabricate same

A structure includes an optoelectronic device having a group iv substrate (e.g., si); a buffer layer (e.g. Sige) disposed on the substrate and a first distributed bragg reflector (dbr) disposed on the buffer layer.
International Business Machines Corporation

Bipolar battery seal and thermal rib arrangements

A current collector assembly, such as for a bipolar lead acid battery, can include an electrically-conductive silicon substrate and a frame bonded to the electrically-conductive silicon substrate. The substrate can be treated or modified, such as to include one or more thin films which render a surface substrate electrically conductive and electrochemically stable in the presence of a lead acid electrolyte chemistry.
Gridtential Energy, Inc.

Negative electrode active material and secondary battery including the same

The present invention relates to a negative electrode active material and a secondary battery including the same, and specifically, provides a negative electrode active material particle including a core, which includes a carbon-based active material and an oxygen functional group, and a shell, which surrounds the core and includes a silicon-based active material.. .
Lg Chem, Ltd.

Lithium ion secondary battery negative electrode material, production method therefor, and lithium ion secondary battery

This lithium ion secondary battery negative electrode material is characterized as being particles that contain silicon and that can occlude and release lithium ions, and satisfying 1.00≤p2/p1≤1.10 when the maximum value of 28.0°≤2θ≤28.2° is defined as p1 and the maximum value of 28.2°≤2θ≤28.6° is defined as p2 in an analysis of an x-ray diffraction pattern.. .
Shin-etsu Chemical Co., Ltd.

Negative electrode active material and lithium secondary battery including the same

The present invention relates to a silicon-carbon-based composite negative electrode active material, and a negative electrode for a secondary battery and a lithium secondary battery including the same, and particularly to a silicon-carbon-based composite negative electrode active material, in which physical stability is improved by including a carbon-based core capable of intercalating and deintercalating lithium ions and at least one silicon particle included in the carbon-based core and disposed in the form of being distributed in an outer portion of the carbon-based core, and a negative electrode for a secondary battery and a lithium secondary battery in which life characteristics are improved by including the same.. .
Lg Chem, Ltd.

Back contact photovoltaic cells with induced junctions

The disclosed technology generally relates to photovoltaic devices and more particularly to back contact photovoltaic devices, and to methods of fabricating back contact photovoltaic devices. In one aspect, a back contact photovoltaic cell includes an n-type silicon substrate having formed on a rear side first layer stacks formed at first locations and second layer stacks formed at second locations different from and non-overlapping with the first locations.
Kuwait University

Optical cladding layer design

Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a iii-v semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the iii-v semiconductor layer.
Juniper Networks, Inc.

Solar cells with improved lifetime, passivation and/or efficiency

A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate.
Sunpower Corporation

Iii-n epitaxial device structures on free standing silicon mesas

Iii-n semiconductor heterostructures on iii-n epitaxial islands laterally overgrown from a mesa of a silicon substrate. An ic may include a iii-n semiconductor device disposed on the iii-n epitaxial island overhanging the silicon mesa and may further include a silicon-based mosfet monolithically integrated with the iii-n device.
Intel Corporation

Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device

A silicon carbide single crystal includes: threading dislocations each of which having a dislocation line extending through a c-plane, and a burgers vector including at least a component in a c-axis direction. In addition, a density of the threading dislocations having angles, each of which is formed by an orientation of the burgers vector and an orientation of the dislocation line, larger than 0° and within 40° is set to 300 dislocations/cm2 or less.
Central Research Institute Of Electronic Power Industry.

Semiconductor device and manufacturing the same

A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the soi substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed.

Semiconductor device and fabricating the same

A semiconductor device and a method of fabricating the same are provide. The fabricating method includes providing a silicon-on-insulator (soi) substrate that includes, from bottom to top, a substrate, a first insulating layer and a semiconductor layer.
United Microelectronics Corp.

Anti-reflective coating with high refractive index material at air interface

An optical element comprising a transparent substrate and an anti-reflective coating, wherein the anti-reflective coating further comprises at least a transparent, high refractive index layer and a transparent, low refractive index layer, wherein the high refractive index layer is in contact with the low refractive index layer; and wherein the high refractive index layer is situated at an interface between the anti-reflective coating and air. Further, the low refractive index layer may be silicon oxide; the high refractive index layer may be tantalum oxide or silicon nitride..
Omnivision Technologies, Inc.

Display device

A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode.
Japan Display Inc.

Structure and method to form defect free high-mobility semiconductor fins on insulator

A semiconductor structure is provided that includes a plurality of high mobility semiconductor material (i.e., silicon germanium alloy of iii-v compound semiconductors) fins located above and spaced apart from a bulk semiconductor substrate portion, wherein each of the high mobility semiconductor material fins has a lower faceted surface that is confined within a dielectric isolation structure.. .
International Business Machines Corporation

Tungsten for wordline applications

Disclosed herein are methods and related apparatus for formation of multi-component tungsten-containing films including multi-component tungsten-containing films diffusion barriers. According to various embodiments, the methods involve deposition of multi-component tungsten-containing films using tungsten chloride (wclx) precursors and boron (b)-containing, silicon (si)-containing or germanium (ge)-containing reducing agents..
Lam Research Corporation

Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle

Methods of operating semiconductor memory devices with floating body transistors, using a silicon controlled rectifier principle are provided, as are semiconductor memory devices for performing such operations. A method of maintaining the data state of a semiconductor dynamic random access memory cell is provided, wherein the memory cell comprises a substrate being made of a material having a first conductivity type selected from p-type conductivity type and n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type; a second region having the second conductivity type, the second region being spaced apart from the first region; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer, the body region having the first conductivity type; and a gate positioned between the first and second regions and adjacent the body region.
Zeno Semiconductor, Inc.

Low trigger and holding voltage silicon controlled rectifier (scr) for non-planar technologies

The present disclosure relates to a silicon controlled rectifier (scr) in non-planar technology to provide a robust esd protection in system on chip employing non-planar technologies. The disclosed scr incorporates wire or fin shaped nanostructures extending from p-type tap to cathode, from the cathode to anode, and from the anode to n-type tap to provide parallel trigger paths to prevent problem of current crowding at the base emitter junction that limits efficient turn-on in conventional scrs.
Indian Institute Of Science

Diode-triggered schottky silicon-controlled rectifier for fin-fet electrostatic discharge control

Various embodiments include fin-type field effect transistor (finfet) structures. In some cases, a finfet structure includes: a substrate; a silicon-controlled rectifier (scr) over the substrate, the scr including: a p-well region and an adjacent n-well region over the substrate; and a negatively charged fin over the p-well region; and a schottky diode electrically coupled with the scr, the schottky diode spanning between the p-well region and the n-well region, the schottky diode for controlling electrostatic discharge (esd) across the negatively charged fin and the n-well region..
Globalfoundries Inc.

Sensor shielding for harsh media applications

A sensor device for use in harsh media, comprising a silicon die comprises a lowly doped region, and a contact layer, contacting the silicon die. The contact layer comprises a refractory metal and an ohmic contact to the silicon die via a silicide of the refractory metal.
Melexis Technologies Nv

Metal on both sides with power distributed through the silicon

An apparatus including a circuit structure including a device stratum; and a contact coupled to a supply line and routed through the device stratum and coupled to at least one device on a first side. A method including providing a supply from a package substrate to at least one transistor in a device stratum of a circuit structure; and distributing the supply to the at least one transistor using a supply line on an underside of the device stratum and contacting the at least one transistor on a device side by routing a contact from the supply line through the device stratum.
Intel Corporation

Semiconductor devices including through-silicon-vias and methods of manufacturing the same and semiconductor packages including the semiconductor devices

A semiconductor device can include a substrate that has a surface. A via structure can extend through the substrate toward the surface of the substrate, where the via structure includes an upper surface.
Samsung Electronics Co., Ltd.

Conformal low temperature hermetic dielectric diffusion barriers

Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3d topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ald) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a pecvd process for a thinner contiguous hermetic diffusion barrier.
Intel Corporation

Gate all around device architecture with hybrid wafer bond technique

A system and method for fabricating non-planar devices while managing semiconductor processing yield and cost are described. A semiconductor device fabrication process forms a stack of alternating semiconductor layers.
Advanced Micro Devices, Inc.

Bond pad protection for harsh media applications

A method for making and a semiconductor device comprises a silicon die including a metal contact region and, at least one passivation layer covering the semiconductor die and patterned such as to form an opening to the metal contact region of the semiconductor die. A continuous part of a contact layer comprises a refractory metal, and overlaps and completely covers the opening in the at least one passivation layer to contact the metal contact region in the opening and adhere to the at least one passivation layer along the entire edge of the continuous part.
Melexis Technologies Nv

Isotropic etching of film with atomic layer control

A method for isotropically etching film on a substrate with atomic layer control includes a) providing a substrate including a material selected from a group consisting of silicon (si), germanium (ge) and silicon germanium (sige). The method includes b) depositing a sacrificial layer on the material in a processing chamber by: cooling a lower portion of the substrate; one of creating or supplying an oxidant-containing plasma in the processing chamber; and increasing a surface temperature of the substrate for a predetermined period using rapid thermal heating while creating or supplying the oxidant-containing plasma in the processing chamber.
Lam Research Corporation

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Provided is a technique which includes forming on a substrate an oxide film containing silicon or a metal element and doped with a dopant by performing a cycle a predetermined number of times, wherein the cycle includes sequentially and non-simultaneously performing: (a) supplying a first gas to the substrate wherein the first gas is free of chlorine and contains boron or phosphorus as the dopant; (b) supplying a second gas to the substrate wherein the second gas contains silicon or the metal element; and (c) supplying a third gas to the substrate wherein the third gas contains oxygen.. .
Hitachi Kokusai Electric Inc.

Methods and systems for system design automation (sda) of mixed signal electronic circuitry including embedded software designs

Methods and systems for sda of mixed signal electronic circuitry including embedded software designs for creating asics, sub-systems, and socs. The sda system described extends ip reuse beyond the circuit and stand-alone verification capabilities that are common practice today which limit the benefits of reuse.
Concertal Systems, Inc.

Addition-curable liquid silicone rubber mixture, electrophotographic member, producing the same, and fixing apparatus

Provided is an electrophotographic member, the member including an elastic layer that is formed by graphite particles dispersed in a silicone rubber and has high thermal conductivity in the thickness direction. The electrophotographic member has a substrate and an elastic layer on the substrate, in which the elastic layer contains a cured product of an addition-curable liquid silicone rubber mixture including graphite particles, the dibutyl phthalate (dbp) oil absorption number of the graphite particles is from 80 cm3/100 g to 150 cm3/100 g, the thermal conductivity in the thickness direction of the elastic layer is from 1.1 w/(m·k) to 5.0 w/(m·k), and the modulus in tension of the elastic layer is from 0.1 mpa to 4.0 mpa..
Canon Kabushiki Kaisha

Addition-curable liquid silicone rubber mixture, electrophotographic member and production method therefor, and fixing apparatus

The present disclosure provides an electrophotographic member having an elastic layer containing graphite particles dispersed in a silicone rubber and having a high thermal conductivity in the thickness direction. The electrophotographic member includes a substrate and an elastic layer on the substrate, the elastic layer containing a cured product of an addition-curable liquid silicone rubber mixture including an addition-curable liquid silicone rubber and graphite particles, and the graphite particles having a dbp oil absorption number of 40 cm3/100 g or more and lower than 80 cm3/100 g..
Canon Kabushiki Kaisha

Pattern forming method, semiconductor device, and manufacturing method thereof

According to one embodiment, a pattern forming method includes forming a resist pattern on a substrate, forming a first silicone resin layer so as to bury the resist pattern on the substrate, pressing a film on the surface of the first silicone resin layer to adhere the film thereto, curing the first silicone resin layer after the adhesion of the film, peeling the film from the first silicone resin layer before or after the curing of the first silicone resin layer, and removing the resist pattern after the peeling of the film.. .
Kabushiki Kaisha Toshiba

Method for making an epoxy resin mold from a lithography patterned microstructure master

A method for pattern transfer to a silicone-based microstructure device comprises the steps of molding a silicone-based negative replica from a lithography patterned master mold. An epoxy resin-based master mold is molded from the silicone-based replica.
The University Of North Carolina At Chapel Hill

Display substrate and manufacturing method thereof and display device

Embodiments of the present disclosure provide a display substrate and manufacturing method thereof and a display device. The method of manufacturing the display substrate comprises: forming a pattern including an active layer on a base substrate using an amorphous silicon material, the active layer including at least one step region having a film thickness greater than a film thickness of other regions of the active layer; crystallizing the amorphous silicon material in the active layer into a polysilicon material..
Boe Technology Group Co., Ltd.

Fiber coupler for silicon photonics

An apparatus for converting fiber mode to waveguide mode. The apparatus includes a silicon substrate member and a dielectric member having an elongated body.
Inphi Corporation

Battery-powered deposition system and process for making reflective coatings

A battery powered deposition system and process for applying aluminum, silver, and sio films (and their derivatives such as aluminum oxide, aluminum nitride and silicon dioxide) especially for making broadband reflective coatings for mirrors. One or more filaments are wetted with a filament wetting material such as aluminum or a silver alloy.

Silicone hydrogels comprising n-vinyl amides and hydroxyalkyl (meth)acrylates or (meth)acrylamides

The present invention relates to a process comprising the steps of reacting a reactive mixture comprising at least one silicone-containing component, at least one hydrophilic component, and at least one diluent to form an ophthalmic device having an advancing contact angle of less than about 80°; and contacting the ophthalmic device with an aqueous extraction solution at an elevated extraction temperature, wherein said at least one diluent has a boiling point at least about 10° higher than said extraction temperature.. .
Johnson & Johnson Vision Care, Inc.

Systems and methods for detector output adjustment

A silicon photomultiplier (sipm) based detection system includes a plurality of scintillators, sipms, a front end circuit, adjustment circuits, and an energy and position processing unit. The sipms have a non-linear response to energy deposition corresponding to radiation detection.
General Electric Company

Method of fabricating nano-scale structures on the edge and nano-scale structures fabricated on the edge using the method

A fabrication method for the fabrication of special nano-scale structures, such as afm probe tip(s) at the edge of a silicon and/or silicon nitride platform, called the cantilever. An array of these special afm probes with the afm tip structure located at the edge is fabricated from an array of regular afm probes where the afm tip structure may not originally have been located at the edge of the cantilever.

Silicon substrate analyzing device

A silicon substrate analyzing device with which impurities such as trace metals in a silicon substrate having a thick nitride film or oxide film formed on a silicon substrate surface can be analyzed with a high precision by icp-ms. The silicon substrate analyzing device includes a load port, a substrate transportation robot, an aligner, a drying chamber, a gas-phase decomposition chamber, an analysis scan port having an analysis stage and a substrate analyzing nozzle, an analysis liquid collecting means, and an analysis means for performing inductively coupled plasma mass spectrometry.
Ias Inc.

A portable battery steam cleaner

The present invention provides a portable battery steam cleaner comprising in combination of a hollow main body, in which a water tank, peristaltic pump, control system and lithium battery; the water tank in connection with the input of the peristaltic pump; the output of the peristaltic pump in connection with one end of silicone hose; and the other end of silicone hose in connection with the steam generator. The present invention can continuously transport liquid from the water tank, through the silicone hose, into the steam generator, and thus eject steam continuously for cleaning purposes..
Beijing China Base Startrade Co., Ltd.

Nonwoven down batting

The invention provides batting that includes a nonwoven web having a first surface parallel to a second surface. The nonwoven web is made up of a fiber mixture that includes: 25 to 75 wt % spiral-crimped siliconized synthetic polymeric fibers having a denier of greater than 4 denier and less than 10 denier; and 20 to 75 wt % down treated with a durable water repellant, said down having a fill power of at least 550 in3/oz, and having a down cluster content of at least 85 wt %.
Primaloft, Inc.

Method for producing epitaxial silicon carbide single crystal wafer

A method for producing an epitaxial silicon carbide single crystal wafer comprised of a silicon carbide single crystal substrate having a small off angle on which a high quality silicon carbide single crystal film with little basal plane dislocations is provided, that is, a method for producing an epitaxial silicon carbide single crystal wafer epitaxially growing silicon carbide on a silicon carbide single crystal substrate using a thermal cvd method, comprising supplying an etching gas inside the epitaxial growth reactor to etch the surface of the silicon carbide single crystal substrate so that the arithmetic average roughness ra value becomes 0.5 nm to 3.0 nm, then starting epitaxial growth to convert 95% or more of the basal plane dislocations at the surface of the silicon carbide single crystal substrate to threading edge dislocations.. .
Nippon Steel & Sumitomo Metal Corporation

A the manufacture of a phosphatable part starting from a steel sheet coated with a metallic coating based on aluminum

A method for the manufacture of a hardened part coated with a phosphatable coating is provided. The method includes providing a steel sheet pre-coated with a metallic coating including from 4.0 to 20.0% by weight of zinc, from 1.0 to 3.5% by weight of silicon, optionally from 1.0 to 4.0% by weight of magnesium, and optionally additional elements chosen from pb, ni, zr, or hf, the content by weight of each additional element being less than 0.3% by weight, the balance being aluminum and unavoidable impurities and residuals elements.
Arcelormittal

Metal-coated steel strip

A steel strip having a coating of a metal alloy on at least one surface of the strip is disclosed. The metal alloy contains aluminium, zinc, silicon, and magnesium as the major elements.
Bluescope Steel Limited

A nickel-based alloy

A nickel-based alloy composition consisting, in weight percent, of: between 3.5 and 6.5% chromium, between 0.0 and 12.0% cobalt, between 4.5 and 11.5% tungsten, between 0.0 and 0.5% molybdenum, between 3.5 and 7.0% rhenium, between 1.0 and 3.7% ruthenium, between 3.7 and 6.8% aluminium, between 5.0 and 9.0% tantalum, between 0.0 and 0.5% hafnium, between 0.0 and 0.5% niobium, between 0.0 and 0.5% titanium, between 0.0 and 0.5% vanadium, between 0.0 and 0.1% silicon, between 0.0 and 0.1% yttrium, between 0.0 and 0.1% lanthanum, between 0.0 and 0.1% cerium, between 0.0 and 0.003% sulphur, between 0.0 and 0.05% manganese, between 0.0 and 0.05% zirconium, between 0.0 and 0.005% boron, between 0.0 and 0.01% carbon, the balance being nickel and incidental impurities.. .
Oxford University Innovation Limited

Silicone rubber composition for thermally conductive silicone-rubber development member, and thermally conductive silicone-rubber development member

A silicone rubber composition for thermally conductive silicone-rubber development members which comprises (a) 100 parts by mass of an organopolysiloxane having, in the molecule, at least two alkenyl groups each bonded to a silicon atom, (b) 40-400 parts by mass of a thermally conductive powder that has an average primary-particle diameter of 30 μm or smaller and a thermal conductivity of 10 w/m·k or greater, (c) 1-50 parts by mass of carbon black, and (d) a hardener in an amount capable of curing the component (a) and which gives a cured silicone rubber having a thermal conductivity of 0.28 w/m·k or greater. With the silicone rubber composition for thermally conductive silicone-rubber development members, it is possible to provide a thermally conductive silicone-rubber development member (roll, belt, etc.) which comprises a silicone rubber layer formed by curing the silicone rubber composition and which is excellent in terms of image characteristics and has the feature of high thermal conductivity..
Shin-etsu Chemical Co., Ltd.

Composite material, heat-absorbing component, and producing the composite material

In a known composite material with a fused silica matrix there are regions of silicon-containing phase embedded. In order to provide a composite material which is suitable for producing components for use in high-temperature processes for heat treatment even when exacting requirements are imposed on impermeability to gas and on purity, it is proposed in accordance with the invention that the composite material be impervious to gas, have a closed porosity of less than 0.5% and a specific density of at least 2.19 g/cm3, and at a temperature of 1000° c.
Heraeus Quartz America Llc

Polyphenyl ether resin composition and use thereof in high-frequency circuit substrate

The present invention relates to a polyphenyl ether resin composition and a use thereof in a high-frequency circuit substrate. The polyphenyl ether resin composition comprises a vinyl-modified polyphenyl ether resin and an organic silicon resin containing unsaturated double bonds and having a three-dimensional net structure.
Shengyi Technology Co., Ltd.

Temporary bonding material, laminate, manufacturing laminate, manufacturing device substrate, and manufacturing semiconductor device

A temporary bonding material of the present invention includes a thermoplastic resin, a compound having a si—o structure in an amount of 0.001% by mass or more and less than 8% by mass of the thermoplastic resin, and a solvent, in which an adhesive force of the temporary bonding material of an adhesive in which the solvent is removed from the temporary bonding material with respect to a silicon wafer is 1 to 15 n/m. In addition, a laminate using the temporary bonding material, a method for manufacturing a laminate, a method for manufacturing a device substrate, and a method for manufacturing a semiconductor device are disclosed..

Aerosol silicone

A silicone-based aerosol product includes a container and an aerosol silicone composition within the container. The aerosol silicone composition includes a silicone elastomer composition and a propellant..

Nonstick ceramic coating composite and heating kitchen utensil using the same

A nonstick ceramic coating composite and a heating kitchen utensil using the same, and more particularly, a nonstick ceramic coating composite that is prepared by filing a nonstick silicone fluid in the pores of a functional filler and mixing the filler with an inorganic binding agent, etc. And a heating kitchen utensil that has a nonstick ceramic coating layer using the nonstick ceramic coating composite in order to render heating kitchen utensils nonstick for a long period, according to which it is possible to provide a nonstick ceramic coating composite that is prepared by loading a nonstick silicone fluid in the pores of a functional filler and mixing the filler with an inorganic binding agent, etc., and, by applying the nonstick ceramic coating composite on a heating kitchen utensil, acquire adequate corrosion resistance, wear resistance, heat resistance, etc., prevent food from being sticking to such utensils when being heated and retain the nonstickability of such utensils for a long period by restricting to the extent possible, when compared with conventional nonstick ceramic composites, the nonstickability-endowed compounds from being deteriorated..
Sam Kwang Co., Ltd.

Cured silicone particles and cosmetic incorporating same therein

Cured silicone particles are disclosed. The cured silicone particles are obtained by curing a curable silicone composition comprising at least components (a) through (c), wherein components (a) and (b) are polyorganosiloxanes having certain average formulas, and component (c) is a catalyst.
Dow Corning Toray Co., Ltd.

Stretchable film and forming the stretchable film

The present invention was accomplished by a stretchable film including a resin having a branched siloxane bond having 3 to 11 silicon atoms on a side chain and having a urethane bond on a main chain.. .

Curable composition and cured product from same

Provided is a curable composition which has chargeability into silicone molds and curability at excellent levels, less causes the silicone molds to swell, and allows the silicone molds to have better durability and a longer service life in repeated use. The curable composition according to the present invention contains curable compounds and a cationic initiator and is used for production of an optical component by molding using silicone molds.
Daicel Corporation

Sintered material and cutting tool including same

A sintered material includes a first material and a second material, the first material being partially stabilized zro2 having a crystal grain boundary or crystal grain in which 5 to 90 volume % of al2o3 is dispersed with respect to a whole of the first material, the second material including at least one of sialon, silicon nitride and titanium nitride, the sintered material including 1 to 50 volume % of the first material.. .
Sumitomo Electric Industries, Ltd.

Aluminum-silicon-carbide composite and manufacturing same

Provided is an aluminum-silicon-carbide composite formed by impregnating a porous silicon carbide molded body with an aluminum alloy. The ratio of silicon carbide in the composite is 60 vol % or more, and the composite contains 60-75 mass % of silicon carbide having a particle diameter of 80 μm or more and 800 μm or less, 20-30 mass % of silicon carbide having a particle diameter of 8 μm or more and less than 80 μm, and 5-10 mass % of silicon carbide having a particle diameter of less than 8.

Water lock to prevent water ingress

The invention provides an element (210) comprising: (i) an electrical component (1220); (ii) an optical medium (270) comprising medium material (275) comprising a silicone transmissive for one or more of uv radiation and visible radiation, wherein the electrical component (1220) is embedded in the optical medium (270); (iii) an electrical connector (510) for functionally coupling the electrical component (1220) external to the optical medium (270), wherein the electrical connector (510) is embedded in the optical medium (270) over at least part of its length; and (iv) a water barrier (530) at least partly embedded in the optical medium (270) and configured to enclose at least part of the electrical connector (510).. .
Koninklijke Philips N.v.

Additive manufacturing with nanofunctionalized precursors

Some variations provide a process for additive manufacturing of a nanofunctionalized metal alloy, comprising: providing a nanofunctionalized metal precursor containing metals and grain-refining nanoparticles; exposing a first amount of the nanofunctionalized metal precursor to an energy source for melting the precursor, thereby generating a first melt layer; solidifying the first melt layer, thereby generating a first solid layer; and repeating many times to generate a plurality of solid layers in an additive-manufacturing build direction. The additively manufactured, nanofunctionalized metal alloy has a microstructure with equiaxed grains.
Hrl Laboratories, Llc

Methods for nanofunctionalization of powders, and nanofunctionalized materials produced therefrom

Some variations provide a method of making a nanofunctionalized metal powder, comprising: providing metal particles containing metals selected from aluminum, iron, nickel, copper, titanium, magnesium, zinc, silicon, lithium, silver, chromium, manganese, vanadium, bismuth, gallium, or lead; providing nanoparticles selected from zirconium, tantalum, niobium, or titanium; disposing the nanoparticles onto surfaces of the metal particles, in the presence of mixing media, thereby generating nanofunctionalized metal particles; and isolating and recovering the nanofunctionalized metal particles as a nanofunctionalized metal powder. Some variations provide a composition comprising a nanofunctionalized metal powder, the composition comprising metal particles and nanoparticles containing one or more elements selected from the group consisting of zirconium, tantalum, niobium, titanium, and oxides, nitrides, hydrides, carbides, or borides thereof, or combinations of the foregoing..
Hrl Laboratories, Llc

Sinter-resistant stable catalyst systems by trapping of mobile platinum group metal (pgm) catalyst species

Methods of preparing a sinter-resistant catalyst include forming a dual coating system. A surface of a particulate catalyst support contacts a first liquid precursor including a metal salt with an element selected from the group consisting of: aluminum (al), cerium (ce), zirconium (zr), titanium (ti), silicon (si), magnesium (mg), zinc (zn), and combinations thereof.
Gm Global Technology Operations Llc

Plugged honeycomb structure

A plugged honeycomb structure including: a pillar-shaped honeycomb structure body having porous partition walls made of a material including silicon carbide, and plugging portions, wherein a porosity of the partition walls is from 42 to 52%, a thickness of the partition walls is from 0.15 to 0.36 mm, a ratio of a volume of pores having pore diameters of 10 μm or less to a total pore volume of the partition walls is 41% or less, a ratio of a volume of pores having pore diameters in a range of 18 to 36 μm to the total pore volume is 10% or less, the pore diameter indicating a maximum value of the log differential pore volume is in a range of 10 to 16 μm, and a half-value width of a peak including the maximum value of the log differential pore volume is 5 μm or less.. .
Ngk Insulators, Ltd.

Nasal ejecting catheter for home remedy of nasal irrigation treatment

A nasal ejecting catheter for home remedy of nasal irrigation treatment comprises a catheter unit and a connecting unit. The catheter unit comprises an open end, a closed end on the opposite side and a plurality of apertures formed near the closed end.
Patent Wide International Corporation

Topcoat for long-wear lip compositions

The present invention relates to a topcoat composition for long-wear lip compositions comprising at least one silicone film-forming agent, as well as to systems, kits and methods of treating, making-up and enhancing the appearance of lips, including a long-wear lip composition comprising at least one silicone film-forming agent and a topcoat composition for application to the long-wear lip composition.. .
L'oreal

Long-wear compositions containing silicone resin and silicone elastomer resin

Compositions including at least one silicone resin comprising at least one t unit and at least one silicone elastomer resin, as well as methods of making such compositions and methods of applying such compositions to keratinous material are provided.. .
L'orÉal

Long-wear compositions containing silicone acrylate copolymer and surface-treated pigment

Compositions including at least one dendritic silicone acrylate copolymer and at least one surface-treated pigment, as well as methods of making such compositions and methods of applying such compositions to keratinous material are provided.. .
L'orÉal

Long-wear compositions containing silicone acrylate copolymer, silicone elastomer resin and surface-treated pigment

Compositions including at least one dendritic silicone acrylate copolymer, at least one silicone elastomer resin, and at least one surface-treated pigment, as well as methods of making such compositions and methods of applying such compositions to keratinous material are provided.. .
L'orÉal

Long-wear compositions containing silicone acrylate copolymer and silicone elastomer resin

Compositions including at least one dendritic silicone acrylate copolymer and at least one silicone elastomer resin, as well as methods of making such compositions and methods of applying such compositions to keratinous material are provided.. .
L 'orÉal

Trocar structure for abdominal surgery

The trocar structure for abdominal surgery comprises a cannula having at one end a guide element provided with a valve for maintaining the positive intracavitary pressure and a shaft having, at one end a head and at the opposite end a tip, advantageously the valve is made of a single piece of silicone and has first elastically deformable sealing means for maintaining the positive intracavitary pressure during the passage of the shaft and of a surgical instrument through the cannula and second elastically deformable sealing means engaging the guide element.. .
Ab Medica Holding S.p.a.

Silicone clip

Disclosed is a clip for a bracelet and/or a necklace. The clip in a closed state having a through hole (402) allowing the clip to wreathe an elongated member of a bracelet and/or necklace.
Pandora A/s

Silicone clip

Disclosed is a clip (100) for a bracelet and/or a necklace. The clip in a closed state having a through hole (102) allowing said clip to wreathe an elongated member (301) of a bracelet and/or necklace.
Pandora A/s

. .

Segmented tubes used in annealing of high purity silicon granules

This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly.
Rec Silicon Inc

Device programming with system generation

A secure programming system and method for provisioning and programming a target payload into a programmable device mounted in a programmer. The programmable device can be authenticated before programming to verify the device is a valid device produced by a silicon vendor.
Data I/o Corporation

Vapor cell comprising electro-optic function for chip-scale atomic clock, and manufacturing sealed container for chipscale instrument

According to the present invention, since a silicon body itself supporting first and second glass substrates also has a role of an electric heating device, the temperature of the inside of a through-part can be maintained to be constant. In addition, since it is unnecessary to comprise a separate electric heating device such as a heater or to form an additional heating pattern in order to control the temperature of the inside of the through-part, a process for manufacturing a vapor cell can be simplified.
Korea Advanced Institute Of Science And Technology

Complementary metal oxide silicon transceiver having integrated power amplifier

A complementary metal oxide silicon transceiver having an integrated power amplifier is provided. The complementary metal oxide silicon transceiver having the integrated power amplifier is capable of controlling an output power according to a communication environment to solve the following problem that with the increment of an output level of a power amplifier, performance is decreased when noises flow into other blocks of a transceiver with power and thus are inputted to the power amplifier..
Fci Inc.

Photonic device comprising a laser optically connected to a silicon wave guide and fabricating such a photonic device

A photonic device comprising: a support; an intermediate layer comprising at least one dielectric material and a first and second excess thickness of silicon separated from each other by a space; a first patterned silicon layer at least partially forming a waveguide, and first to fifth waveguide sections; a first dielectric layer covering the first silicon layer and a gain structure comprising at least one gain medium in contact with the first dielectric layer; the second and fourth wave guide sections, the first and second excess thicknesses of silicon, and the first and second ends of the gain structure forming a first and second optical transition zone between a hybrid laser waveguide, formed by a central portion of the gain structure, the space and the third waveguide section and the first and fifth waveguide sections respectively. The invention also relates to a method of fabricating such a photonic device..
Commissariat à I'énergie Atomique Et Aux énergies Alternatives

Lithium secondary battery and manufacturing same

Provided are a lithium secondary battery wherein gas generation associated with charging and discharging can be suppressed even in case where silicon and silicon oxide are contained as negative electrode active materials, and wherein deformation due to the gas generation can be suppressed even in case where a resin film is used as an outer package; and a method for manufacturing the lithium secondary battery. A lithium secondary battery comprises a negative electrode containing a negative electrode active material, a positive electrode containing a positive electrode active material, and an electrolytic solution used to immerse the negative electrode active material and the positive electrode active material, wherein the negative electrode active material contains silicon and silicon oxide that have been subjected to a reduction treatment..
Nec Corporation

Silicon particle-containing anode materials for lithium ion batteries

One aspect of the invention relates to an anode material or lithium ion batteries that is based on silicon particles, one or more binders, optionally gaphite, optionally one or more additional electroconductive components, and optionally one or more additives, characterized in that the silicon particles are not aggegated and have a volume-weighted particle size distribution between the diameter percentiles d10≥0.2 μm and d50≤20.0 μmas well as as width d90≤15 μm.. .
Wacker Chemie Ag

Negative electrode active material for lithium ion secondary battery and producing same

A negative electrode active material for the lithium ion secondary battery contains silicon oxide that is obtained by heat-treating, under an inert gas atmosphere, a hydrogen silsesquioxane polymer (hpsq) obtained by allowing hydrolysis of a silicon compound represented by formula (1) and then a condensation reaction of the resulting material, contains si, o and h, and has, in an infrared spectrum, a ratio (i1/i2) in the range of 0.01 to 0.35 with regard to intensity (i1) of peak 1 at 820 to 920 cm−1 due to a si—h bond to intensity (i2) of peak 2 at 1000 to 1200 cm−1 due to a si—o—si bond, and is represented by general formula sioxhy (1<x<1.8, 0.01<y<0.4): hsi(r)3 (1), in which r is groups selected from hydrogen, alkoxy having 1 to 10 carbons and the like.. .
Jnc Petrochemical Corporation

Electroluminescent device

An organic el display device includes a substrate and an organic el element (electroluminescent element) provided on the substrate. The organic el display device includes a sealing layer that seals the organic el element.
Sharp Kabushiki Kaisha

Thermoelectric conversion material and producing same

A thermoelectric conversion material is used in which columnar or spherical nanodots 1 having a diameter of 20 nm or less are embedded in an embedding layer 3 at an area density of 5×1010/cm2 or more and an interval between the nanodots of 0.5 nm or more and 30.0 nm or less, and the first material constituting the nanodot 1 is a material containing silicon in an amount of 30 atom % or more, and, either one or both of a difference in energy between the valence band of the first material and the valence band of the second material constituting the embedding layer 3 and a difference in energy between the conduction band of the first material and the conduction band of the second material constituting the embedding layer are in the range of 0.1 ev or more and 0.3 ev or less.. .
Tohoku Techno Arch Co., Ltd.

Led lamp with siloxane particle material

An led lamp is formed from a die substrate wherein the substrate has formed thereon a semiconductor material, an electrode for the application of a bias across the semiconductor material for causing light to be emitted therefrom, and an adhesive that bonds the die substrate to a support substrate, wherein the adhesive is a polymerized siloxane polymer having a thermal conductivity of greater than 0.1 watts per meter kelvin (w/(m·k)) wherein the adhesive is not light absorbing, wherein the siloxane polymer has silicon and oxygen in the polymer backbone, as well as aryl or alky groups bound thereto, and wherein the adhesive further comprises particles having an average particle size of less than 100 microns.. .
Inkron Oy

Porous silicon nanowire photovoltaic cell

The porous silicon nanowire photovoltaic cell includes a first electrode, a p-type silicon layer, and a second electrode, which is formed from a transparent electrode with at least one metal contact. An array of porous silicon nanowires is sandwiched between the second electrode and the p-type silicon layer.
United Arab Emirates University

Thin film transistor and manufacturing thin film transistor

Provided are a thin film transistor having properties properly adjusted by adjusting crystallinity of a polycrystalline silicon, and a method of manufacturing the same. The silicon layer functioning as a channel layer of a tft comprises an amorphous part, a first polycrystalline part and a second polycrystalline part.
Sakai Display Products Corporation

Low temperature polysilicon array substrate and manufacturing the same

Disclosed is a low temperature polysilicon array substrate and its manufacturing method. The method includes: forming a light-shielding layer, a buffer layer and u-type polysilicon patterns successively on a glass substrate; doping channels of the u-type polysilicon patterns in the active area and then heavily n+ doping these u-type polysilicon patterns; forming a gate insulation layer and etching first via holes; forming a gate line, a source and lightly-doped regions of the n-type double-gate transistor; and heavily p+ doping u-type polysilicon patterns in the non-active area..
Wuhan China Star Optoelectronics Technology Co., Ltd.

Transistor structure with improved unclamped inductive switching immunity

A laterally diffused metal oxide semiconductor (ldmos) transistor structure with improved unclamped inductive switching immunity. The ldmos includes a substrate and an adjacent epitaxial layer both of a first conductivity type.
Vishay-siliconix

Polysilicon design for replacement gate technology

The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.

Method for manufacturing a semiconductor device with a cobalt silicide film

A method for manufacturing a semiconductor device with a cobalt silicide film is provided in the present invention. The method includes the steps of providing a silicon structure with an interlayer dielectric formed thereon, forming a contact hole in the interlayer dielectric to expose the silicon structure, depositing a cobalt film on the exposed silicon structure at a temperature between 300° c-400° c., wherein a cobalt protecting film is in-situ formed on the surface of the cobalt film, performing a rapid thermal process to transform the cobalt film into a cobalt silicide film, and removing untransformed cobalt film..
Fujian Jinhua Integrated Circuit Co., Ltd.

Integrated schottky diode in high voltage semiconductor device

This invention discloses a method for manufacturing a semiconductor power device in a semiconductor substrate comprises an active cell area and a termination area. The method comprises the steps of a) growing and patterning a field oxide layer in the termination area and also in the active cell area on a top surface of the semiconductor substrate b) depositing and patterning a polysilicon layer on the top surface of the semiconductor substrate at a gap distance away from the field oxide layer; c) performing a blank body dopant implant to form body dopant regions in the semiconductor substrate substantially aligned with the gap area followed by diffusing the body dopant regions into body regions in the semiconductor substrate; d) implanting high concentration body-dopant regions encompassed in and having a higher dopant concentration than the body regions and e) applying a source mask to implant source regions having a conductivity opposite to the body region with the source regions encompassed in the body regions and surrounded by the high concentration body-dopant regions..
Alpha And Omega Semiconductor Incorporated

Array substrate, manufacturing method thereof, and display apparatus

The present disclosure provides an array substrate, its manufacturing method, and a display apparatus. The array substrate includes a monocrystalline silicon layer and an array circuit layer.
Ordos Yuansheng Optoelectronics Co., Ltd.

Low temperature polysilicon array substrate and manufacturing the same

A low temperature polysilicon array substrate and a method for manufacturing the same are disclosed. The method includes forming a light shield layer, a buffer layer, and a polysilicon island on a glass substrate in sequence, performing channel doping on an nmos area of the polysilicon island, performing p− light doping on two sides of a pmos area of the polysilicon island, performing n+ heavy doping, forming a gate insulating layer and a gate layer, and performing n− light doping and p+ heavy doping..
Wuhan China Star Optoelectronics Technology Co., Ltd.

Systems, methods and enabling high voltage circuits

Systems, methods and apparatus for coexistence of high voltage and low voltage devices and circuits on a same integrated circuit fabricated in silicon-on-insulator (soi) technology are described. In particular, techniques for mitigating back gate effects are described, including using of resistive and/or capacitive couplings to control surface potentials at regions of a substrate used for the soi fabrication proximate the high voltage and low voltage devices and circuits.
Psemi Corporation

Semiconductor package

A semiconductor package includes a first semiconductor chip including a through silicon via in the first semiconductor chip and a first trench portion in an upper portion of the first semiconductor chip, a second semiconductor chip on an upper surface of the first semiconductor chip and being electrically connected to the first semiconductor chip through the through silicon via of the first semiconductor chip, and an insulating bonding layer between the first semiconductor chip and the second semiconductor chip. The insulating bonding layer fills the first trench portion..
Samsung Electronics Co., Ltd.

Susceptor for holding a semiconductor wafer having an orientation notch, a depositing a layer on a semiconductor wafer, and semiconductor wafer

A semiconductor wafer processing susceptor for holding a wafer having an orientation notch during deposition of a layer on the wafer, having a placement surface for supporting the semiconductor wafer in the rear edge region of the wafer, the placement surface having a stepped outer delimitation, and an indentation of the outer delimitation of the placement surface for placement of the partial region of the edge region of the rear side of the wafer in which the orientation notch is located onto a partial region of the placement surface delimited by the indentation of the outer delimitation of the placement surface. The susceptor is used in a method for depositing a layer on a wafer having an orientation notch, and wafers made of monocrystalline silicon upon which layers are deposited using the susceptor have greater local flatness on both front and rear sides proximate the orientation notch..
Siltronic Ag

Formation of common interfacial layer on si/sige dual channel complementary metal oxide semiconductor device

A method is presented for forming a semiconductor structure. The method includes forming a silicon (si) channel for a first device, forming a first interfacial layer over the si channel, forming a silicon-germanium (sige) channel for a second device, forming a second interfacial layer over the sige channel, and selectively removing germanium oxide (geox) from the second interfacial layer by applying a combination of hydrogen (h2) and hydrogen chloride (hcl).
International Business Machines Corporation

Silicon and silicon germanium nanowire formation

Among other things, one or semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. For example, one or more silicon and silicon germanium stacks are utilized to form pmos transistors comprising germanium nanowire channels and nmos transistors comprising silicon nanowire channels.
Taiwan Semiconductor Manufacturing Company Limited

Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ald

A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ald) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference.
Dow Corning Corporation

Template formation for fully relaxed sige growth

The present disclosure generally relates to a device having a thin, low-defect, fully-relaxed silicon germanium (sige) layer, and methods of manufacture thereof. The methods generally include depositing a silicon oxide layer on a silicon layer, patterning the silicon oxide layer, exposing the silicon oxide layer to an etchant to form one or more recesses in the silicon layer and one or more faceted silicon oxide caps, and epitaxially growing a silicon germanium layer in the one or more recesses and over an apex of the one or more faceted silicon oxide caps.
Applied Materials, Inc.

Methods for forming doped silicon oxide thin films

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface.
Asm International N.v.

Integrated organic light emitting diode display making the same

Provided are integrated organic light emitting diode (oled) display apparatus and methods for making the same. In one example, the apparatus includes driving logic on a first substrate of a first die, a plurality of pixel circuits on a second substrate of a second die, and a plurality of oleds above the plurality of pixel circuits.
Viewtrix Technology Co., Ltd.

Transparent conductive coating for capacitive touch panel with additional functional film(s)

A multi-layer conductive coating is substantially transparent to visible light, contains at least one conductive layer comprising silver that is sandwiched between at least a pair of dielectric layers, and may be used as an electrode and/or conductive trace in a capacitive touch panel. The multi-layer conductive coating may contain a dielectric layer of or including zirconium oxide (e.g., zro2) and/or silicon nitride, and may be used in applications such as capacitive touch panels for controlling showers, appliances, vending machines, electronics, electronic devices, and/or the like.
Guardian Glass, Llc

Resist composition, and resist film, pattern forming method, and manufacturing electronic device, each using resist composition

Provided are a resist composition capable of forming a pattern having excellent pattern collapse performance, particularly in the formation of an ultrafine pattern (for example, a pattern with a line width 50 nm or less) using the resist composition containing a resin (a) having a repeating unit (a) having an aromatic ring group and a repeating unit (b) having a silicon atom in a side chain, as well as a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the resist composition.. .
Fujifilm Corporation

Mask blank, phase shift mask, phase shift mask manufacturing method, and semiconductor device manufacturing method

An object is to provide a mask blank for manufacturing a phase shift mask in which a thermal expansion of a phase shift pattern, which is caused when exposure light is radiated onto the phase shift pattern, and displacement of the phase shift pattern are suppressed to be small. A phase shift film has a function of transmitting exposure light from an arf excimer laser at a transmittance of 2% or higher and 30% or lower and a function of generating a phase difference of 150° or larger and 180° or smaller between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance equal to a thickness of the phase shift film.
Hoya Corporation

Optical modulator

A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters.
Elenion Technologies, Llc

Integrated circuit sensor and sensor substrate

An integrated circuit sensor that enables, regardless of a type of an inspection object, the inspection object and a front surface of the integrated circuit sensor to be in reliable contact with each other in a large region is provided. A through silicon via (11) that electrically connects an inside of an integrated circuit sensor (4) and an outside of the integrated circuit sensor (4) is formed in the inside of the integrated circuit sensor (4) so as to reach a rear surface of the integrated circuit sensor (4), which faces the front surface of the integrated circuit sensor (4)..
Sharp Kabushiki Kaisha

Treadmill lubrication system and method

A treadmill lubrication system and method is provided. In a preferred embodiment, the lubrication system comprises a spray bottle with a nozzle including an extended tube through which a silicone-based lubricant may be sprayed.

Epitaxial wafer and manufacturing same

An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface.
Sumitomo Electric Industries, Ltd.

Growing epitaxial 3c-sic on single-crystal silicon

A method of growing epitaxial 3-sic on single-crystal silicon is disclosed. The method comprises providing a single-crystal silicon substrate in a cold-wall chemical vapour deposition reactor, heating the substrate to a temperature equal to or greater than 700° c.
The University Of Warwick

Composite material for a sliding bearing

The invention relates to a method for producing a sliding bearing composite material (10), having a support layer (14), in particular made of steel, a bearing metal layer (18) made of a lead-free aluminum base alloy containing magnesium, and a running layer (22), wherein the aluminum base alloy ultimately comprises 0.5-5.5% by weight magnesium, optionally one or more alloy components from the group comprising zinc, copper, silicon, iron, manganese, chromium, titanium, zirconium, vanadium, nickel, cobalt, cerium, and alloy components resulting from impurities, the sum of the latter not exceeding 1% by weight, and the remainder being aluminum, wherein the aluminum base alloy is copper-free or contains at most 3% by weight copper, the total content of zinc, copper, and nickel does not exceed 8% by weight, and the total content of all alloy components does not exceed 12% by weight. The bearing metal layer (18) is either rolled directly onto the support layer (14) or roll-cladded beforehand with an intermediate layer (38) made of an aluminum alloy or technical pure aluminum and then rolled onto the support layer (14) with this intermediate layer (38) in between, in such a way that the intermediate layer (38) subsequently has a thickness of at most 100 μm, in particular at most 50 μm, wherein the composite of the support layer (14) and the bearing metal layer (18) thus obtained is soft-annealed at temperatures between 280° and 350° c.
Ks Gleitlager Gmbh

High-strength steel having a high minimum yield limit and producing a steel of this type

A high-strength steel having a minimum yield strength of 1300 mpa may include 0.23% to 0.25% by weight carbon, 0.15% to 0.35% by weight silicon, 0.85% to 1.00% by weight manganese, 0.07% to 0.10% by weight aluminium, 0.65% to 0.75% by weight chromium, 0.02% to 0.03% by weight niobium, 0.55% to 0.65% by weight molybdenum, 0.035% to 0.05% by weight vanadium, 1.10% to 1.30% by weight nickel, 0.0020% to 0.0035% by weight boron, and 0.0007% to 0.0030% by weight calcium. The high-strength steel may also include iron, unavoidable impurities, and at least one of the following: at most 0.012% by weight phosphorus, at most 0.003% by weight sulfur, at most 0.10% by weight copper, at most 0.006% by weight nitrogen, at most 0.008% by weight titanium, at most 0.03% by weight tin, at most 2.00 ppm hydrogen, at most 0.01% by weight arsenic, or at most 0.01% by weight cobalt.
Thyssenkrupp Ag

Process for producing a high-grade steel tube and high-grade steel tube

A process for producing a high-grade steel tube includes the steps of: providing a tubular blank of an austenitic high-grade steel, wherein the high-grade steel comprises in weight % no more than 0.02% carbon, no more than 1.0% manganese, no more than 0.03% phosphor, no more than 0.015% sulfur, no more than 0.8% silicon, no more than 17.5% t to 18.5% nickel, no more than 19.5% to 20.5% chromium, no more than 6.0% to 6.5% molybdenum, no more than 0.18% to 0.25% nitrogen, no more than 0.5% to 1.0% copper,and a remainder of iron and unavoidable impurities; and cold-forming the blank into a tube.. .
Sandvik Materials Technology Deutschland Gmbh

Hot melt silicone and curable hot melt composition

A hot melt silicone that is non-flowable at 25° c. And that has a melt viscosity at 100° c.
Dow Corning Toray Co., Ltd.

Release film

According to the present invention, there is provided a release film that can be suitably used in various applications without suffering from deterioration in releasing property thereof, for example, owing to a solvent used upon processing an adhesive layer, when the film is used as a release film for adhesives or a protective film for an adhesive layer for a polarizing plate. The release film of the present invention comprises a polyester film and a coating layer formed on at least one surface of the polyester film, the coating layer comprising a silicone compound and a gemini surfactant..
Mitsubishi Chemical Corporation

Curable and optically clear pressure sensitive adhesive and uses thereof

Curable silicone pressure sensitive adhesive compositions and films suitable for sealing and adhering substrates for optically clear electronic devices are described. The curable silicone pressure sensitive adhesive compositions are suitable as films or encapsulants for adhering electronic devices, e.g., lcd display, led display, flexible display, touch screen, and flexible thin film photovoltaic module..
Henkel Ip & Holding Gmbh

Highly viscous silicone compositions for producing elastomeric molded parts by means of ballistic generative methods

Curable silicone rubber compositions of high viscosity can be ballistically printed if the melt flow index is within a defined shear thinning range and the viscosity is also within a defined range.. .
Wacker Chemie Ag

Silicone rubber composition and silicone rubber crosslinked body

Provided are a silicone rubber composition that is excellent in storage stability and crosslinking reactivity, and a silicone rubber crosslinked body made from the silicone rubber composition. The silicone rubber composition contains (a) an organopolysiloxane, (b) a crosslinking agent, and (c) a microcapsule type catalyst that is made of microparticles of a resin and a crosslinking catalyst encapsulated in the microcapsules, wherein the solubility parameter of the resin of (c) is 7.9 or higher, a thermal conductivity of 0.16 w/m·k or higher, and a glasstransition temperature of 40 to 145 degrees c.
Sumiriko Fine Elastomer, Ltd.

Silicone gel composition and use thereof

A silicone gel composition comprising: (a) branched organopolysiloxane having, on average, at least two alkenyl groups bonded to silicon atoms in a molecule, and a viscosity ranging from 10 to 10,000 mpa·s at 25° c.; (b) organohydrogenpolysiloxane; (c) platinum-based addition reaction catalyst; and (d) a reaction product of (d1) alkali metal silanolate with (d2) at least one ceric salt selected from cerium chloride and a carboxylic acid salt of cerium.. .
Dow Corning Toray Co., Ltd.

Modified filler particles and silicone compositions comprising the same

Composition of comprising nano metal oxide/hydroxide particles and a polyorganosiloxane having increased refractive index, processes to cure these compositions for making transparent coats, shaped articles by an extrusion or molding process having a refractive index above the refractive index of the polyorganosiloxane. Use of the cured polyorganosiloxane compositions as optical devices, coats, lenses or light guides..
Momentive Performance Materials Gmbh

Curable composition

The present invention is a curable composition characterized by including a 2-cyanoacrylate and a particle containing titanium oxide and silicon oxide. The preferable content of the particle is in a range from 0.1 to 10.0 parts by mass based on 100 parts by mass of the 2-cyanoacrylate..
Toagosei Co., Ltd.

Long-workability calcium aluminate cement with hardening promoted by a temperature increase, and related use

Disclosed is to a calcium aluminate cement, including a calcium aluminate with a first crystallised mineralogical phase of calcium dialuminate ca2 including one calcium oxide cao for two aluminium oxides al2o3 and/or a second crystallised mineralogical phase of dicalcium alumina silicate c2as including two calcium oxides cao for one aluminium oxide al2o3 and one silicon dioxide sio2. The mass fraction of all of the first and second mineralogical phases in the calcium aluminate is greater than or equal to 80%..
Kerneos

Coated article with low-e coating having absorbing layers for low film side reflectance and low visible transmission

Absorbing layers of a low-emissivity (low-e) coating are designed to cause the coating to have a reduced film side reflectance which is advantageous for aesthetic purposes. In certain embodiments, the absorbing layers are metallic or substantially metallic (e.g., nicr or nicrnx) and are each provided between first and second nitride layers (e.g., silicon nitride based layers) in order to reduce or prevent oxidation of the absorbing layers during optional heat treatment (e.g., thermal tempering, heat bending, and/or heat strengthening).
Guardian Glass, Llc

Method for producing iron-based oxide magnetic particle powder

To provide iron-based oxide magnetic particle powder that has a narrow particle size distribution and a small content of fine particles that do not contribute to the magnetic recording characteristics, which result in a narrow coercive force distribution, and is suitable for the enhancement of the recording density of the magnetic recording medium, and a method for producing the same. An alkali is added to an aqueous solution containing a trivalent iron ion and an ion of the metal substituting a part of fe sites to neutralize the aqueous solution to ph of 1.0 or more and 3.0 or less; a hydroxycarboxylic acid d is added in an amount providing a molar ratio d/fe with respect to the amount of the trivalent iron ion or a molar ratio (d/(fe+m)) with respect to the total amount of the trivalent iron ion and the ion of the metal m in the case where the substituting metal ion is contained of 0.125 or more and 1.0 or less; an alkali is further added to neutralize to ph of 7.0 or more and 10.0 or less; and then the iron oxyhydroxide containing the substituting metal element is coated with a silicon oxide and heated, so as to provide ε-type iron-based oxide magnetic particle powder containing the substituting metal element..
Dowa Electronics Materials Co., Ltd.

Control of silicon oxide off-gas to prevent fouling of granular silicon annealing system

This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly.
Rec Silicon Inc

System for reducing agglomeration during annealing of flowable, finely divided solids

This disclosure concerns embodiments of an annealing device and a method for annealing flowable, finely divided solids, such as annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which flowable, finely divided solids are flowed downwardly.
Rec Silicon Inc

Method for annealing granular silicon with agglomeration control

This disclosure concerns embodiments of an annealing device and a method for annealing flowable, finely divided solids, such as annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which flowable, finely divided solids are flowed downwardly.
Rec Silicon Inc

Container for icecream

A container for ice cream according to an exemplary embodiment of the present disclosure is an ice cream container having an inner space, in which ice cream is stored, formed by coupling between a container part and a cap part, and the container for ice cream includes: a container part which is formed of a material obtained by mixing polyethylene terephthalate (pet) and silicone resin in order to endow the same with elasticity and has a first coupling flange formed on the periphery thereof and a first grip portion formed on one side thereof; and a cap part which has a second coupling flange corresponding to the first coupling flange and has a second grip portion corresponding to the first grip portion and thus corresponds to the container part.. .
Intellectual Discovery Co., Ltd.

Environmentally-friendly, anti-contamination suction-nozzle beverage cup cover and processing method thereof

Disclosed is an environmentally-friendly, anti-contamination suction-nozzle beverage cup cover, comprising a cover body (1), with the lower part of the cover body (1) being connected to a beverage cup (2), the top of the cover body (1) being formed with a suction nozzle mounting chamber (4), a tube insertion hole (5) being formed in the suction nozzle mounting chamber (4), and a suction nozzle (7) being disposed in the tube insertion hole (5), characterized in that a swing sleeve (8) is provided outside the suction nozzle (7) made of silicone, swing holes (9) are formed in both sides of the mounting chamber (4), the swing sleeve (8) is formed with a swing pin (10) fitted into the swing holes (9), a connecting ear (11) is formed at one side of the cover body (1), a clamp (12) and a safety catch (13) are disposed on the connecting ear (11), the clamp (12) and the safety catch (13) are fixed with the connecting ear (11) via a small shaft (14), a return ejector spring (15) is disposed in the clamp (12), a shield (17) is disposed on the cover body (1), the inner wall of the shield (17) is in contact with the head of the suction nozzle, the head (20) of the shield (17) is formed with a clamp rib (18), and the clamp rib (18) matches the clamp (12). Bacterial contamination can be avoided when the cup cover is opened and closed..

Carrier devices having silicone-free thermoplastic elastomer (tpe) materials

The invention relates generally to carrier materials. More specifically, the present invention relates to silicon-free thermoplastic elastomer (tpe) materials for use in carrier devices.
Delphon Industries, Llc

Organosilicon material for the decontamination of water

The subject of the present invention is the use of a porous or non-porous organosilicon material for eliminating radionuclides, mineral anions, anionic molecular entities and negatively charged dyes or active principles from an aqueous solution, characterized in that the structure of said organosilicon material is formed of repeat units, each repeat unit comprising at least one positively charged entity selected from an ammonium entity, an imidazolium entity, a guanidinium entity, a pyridinium entity and a phosphonium entity and being incorporated into a silicon network by at least two silicon-carbon bonds. The invention also relates to a specific novel organosilicon material, comprising at least one benzyl group, one 4-phenylbenzyl group or one styrene group in each repeat unit..
Axlr, Satt Du Languedoc Roussillon (satt Axlr)

Biocompatible self-lubricating polymer compositions and their use in medical and surgical devices

The invention comprises self-lubricating polymer compositions that are especially useful in medical devices and valves and gaskets of medical devices. In a preferred embodiment, the polymer compositions comprise a thermosetting or thermoplastic silicone elastomer in combination with a lubricity enhancing polyfluoropolyether fluid or hydrocarbon-based synthetic oil.
St. Jude Medical, Atrial Fibrillation Division, Inc.

Hair composition

The present invention provides a hair treatment composition comprising; a. 40-99 w.t.
Conopco, Inc., D/b/a Unilever

Hair composition

The present invention provides: an aqueous hair care composition comprising; a. 0.5 to 3 w.t.
Conopco, Inc., D/b/a Unilever

Electrically conductive bandage for use with touchscreen devices

A bandage covers skin of a patient for the purpose of fostering healing. A touchscreen device normally utilizes conductivity of skin to sense location of a finger upon the touchscreen device.

High-temperature liner for cooking devices

Embodiments are directed to a cooking device and/or to a high-temperature liner, potentially made out of silicone. In one scenario, the high-temperature liner includes a liner shell configured for placement within a cavity of a cooking device, a bottom plate embedded within the liner shell, and a temperature gauge configured to provide internal temperature readings for the cooking device.

. .

Shin-etsu Chemical Co., Ltd.

. .

Underwater heater and manufacturing method therefor

Provided is an immersion heater including: a flange; a heat generation tube bent in a u-shape and having both lengthwise ends passing through the flange in an upward direction; a sensor rod having one end passing through the flange in the upward direction; a cap coupled to the flange to cover an end of the heat generation tube and an end of the sensor rod protruding from a top surface of the flange; a power wire having one end inserted into the cap and connected to a power terminal of the heat generation tube; a sensor wire having one end inserted into the cap and connected to a sensor terminal of the sensor rod; and silicone filled in the cap and including a plurality of hardened layers with a time difference.. .
Kd Heater Co., Ltd.

Standby current reduction in digital circuitries

The standby leakage current reduction schemes for digital data storing components are disclosed. By floating the low digital voltage node of the digital data storing components in standby mode, the major standby leakage current paths to the ground voltage caused by the channel diffusion leakage current of mosfet devices can be terminated.
Flashsilicon Incorporation

Rotating switching strategy for power converters

Systems and methods for operating a power converter with a plurality of inverter blocks with silicon carbide mosfets are provided. A dc to ac converter can include a plurality of inverter blocks.
General Electric Company

Positive electrode active material containing lithium composite oxyfluoride and organosilicon compound, and battery including positive electrode containing the positive electrode active material

A positive electrode active material contains a lithium composite oxyfluoride and an organosilicon compound binding to the lithium composite oxyfluoride. The organosilicon compound has insulation property..
Panasonic Intellectual Property Management Co., Ltd.

Silicon-based composite with three dimensional binding network for lithium ion batteries

The present invention relates to a silicon-based composite with three dimensional binding network and enhanced interaction between binder and silicon-based material, which comprises silicon-based material, treatment material, a binder containing carboxyl groups and conductive carbon, wherein the treatment material is selected from the group consisting of polydopamine or silane coupling agent with amine and/or imine groups; as well as relates to an electrode material and a lithium-ion battery comprising said silicon-based composite, and a process for preparing said silicon-based composite.. .
Robert Bosch Gmbh

Electrode, producing electrode, battery, and using clathrate compound

An electrode containing a clathrate compound is disclosed that is more likely to withstand load involved in repetition of penetration and desorption of, e.g., lithium ions compared to no guest substance-encapsulating silicon clathrate compounds. An electrode active material making up the electrode according to the present invention includes a clathrate compound.
Nippon Steel & Sumitomo Metal Corporation

Method for preparing silicon-carbon composite, negative electrode, and lithium ion battery

The present application provides a method for preparing silicon-carbon composite. The silicon-carbon composite prepared according to the present application is suitable to be an active material for negative electrode of lithium ion battery, which could not only ensure high capacity of silicon but also have good cycle performance and good charge and discharge performance.
Optimum Battery Co., Ltd.

Groove structure employed for printing film formation and manufacture method thereof

The present invention provides a groove structure employed for printing film formation, wherein the groove structure is located on a substrate (1), and comprises a dam (2) and a groove (3) formed by the dam (2) surrounding, and the dam (2) comprises at least two layers of branch dam layers (21), which are stacked up, and material of the branch dam layers (21) is silicon nitride or silicon oxide, and material of a top side branch dam layer (21) is silicon oxide, wherein the inclined circumferential surface of the groove, which is surrounded by the branch dam layer (21) manufactured with silicon oxide and the upper surface of the top side branch dam layer (21) are hydrophobic surfaces, and an inclined circumferential surface of the groove, which is surrounded by the branch dam layer (21) manufactured with silicon nitride, is a hydrophilic surface.. .
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Solar cell

Disclosed is a solar cell including: a semiconductor substrate; a conductive region on or at the semiconductor substrate; an electrode electrically connected to the conductive region; and a passivation layer on a light incident surface of the semiconductor substrate. The passivation layer includes a first layer in contact with the light incident surface of the semiconductor substrate and formed of silicon oxynitride for ultraviolet stability.
Lg Electronics Inc.

Epitaxial silicon wafer

An epitaxial silicon wafer is provided with a boron-doped silicon substrate and an epitaxial layer formed on a surface of the silicon substrate, wherein the boron concentration in the silicon substrate is 2.7×1017 atoms/cm3 or more and 1.3×1019 atoms/cm3 or less, and an initial oxygen concentration in the silicon substrate is 11×1017 atoms/cm3 or less. When an oxygen precipitate evaluation heat treatment, such as a heat treatment at 700° c.
Sumco Corporation

Method of manufacturing thin film transistor and thin film transistor

A method of manufacturing a thin film transistor including: forming a gate electrode on a substrate, forming an insulating film, forming a first silicon layer including an amorphous silicon, irradiating a region of the first silicon layer from a part or the whole of a predetermined region of the first silicon layer to an outside of the predetermined region with an energy beam so as to convert a portion of the first silicon layer into a polycrystalline silicon, a first etching step for etching the first silicon layer while leaving the predetermined region, forming a second silicon layer including an amorphous silicon so as to cover the predetermined region, a second etching step for etching the second silicon layer covering the predetermined region while leaving a part of the second silicon layer, the part larger than the predetermined region, and forming a source electrode and a drain electrode.. .
Sakai Display Products Corporation

Vertical fet structure

A vertical fet includes a silicon carbide substrate having a top surface and a bottom surface opposite the top surface; a drain/collector contact on the bottom surface of the silicon carbide substrate; and an epitaxial structure on the top surface of the silicon carbide substrate having formed therein a first source/emitter implant. A gate dielectric is provided on a portion of the epitaxial structure.
Cree, Inc.

Semiconductor device and manufacturing same

A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide.
Sumitomo Electric Industries, Ltd.

Fully depleted soi device for reducing parasitic back gate capacitance

A method is presented for forming a semiconductor structure. The method includes forming a bilayer buried insulator over a substrate, forming an extremely thin silicon-on-insulator (etsoi) over the bilayer buried insulator, forming a dummy gate, and forming a source/drain next to the dummy gate, the source/drain defining a raised source/drain region.
International Business Machines Corporation

Power mosfet with a deep source contact

A power mosfet ic device including an array of mosfet cells formed in a semiconductor substrate. The array of mosfet cells comprises an interior region of interior mosfet cells and an outer edge region of peripheral mosfet cells, each interior mosfet cell of the interior region of the array comprising a pair of interior mosfet devices coupled to each other at a common drain contact.
Texas Instruments Incorporated

Semiconductor device, power supply circuit, computer, and manufacturing semiconductor device

A semiconductor device includes a first nitride semiconductor layer containing ga, a second nitride semiconductor layer provided on the first nitride semiconductor layer containing ga, a first electrode and a second electrode provided on or above the first nitride semiconductor layer and electrically connected to the first nitride semiconductor layer, a gate electrode provided between the first electrode and the second electrode, a conductive layer provided on or above the second electrode, of which a first distance to the second electrode is smaller than a second distance between the second electrode and the gate electrode, and which is electrically connected to the first electrode or the gate electrode, a first aluminum oxide layer provided between the gate electrode and the second electrode and provided between the second nitride semiconductor layer and the conductive layer, a silicon oxide layer, and a second aluminum oxide layer.. .
Kabushiki Kaisha Toshiba

Power metal-oxide-semiconductor field-effect transistor device with three-dimensional super junction and fabrication method thereof

A power metal-oxide-semiconductor field-effect transistor (mosfet) device includes a first metal layer, a substrate, an epitaxy layer, a plurality of first trench wells, a plurality of second trench wells, a plurality of body structure layers, a plurality of polysilicon layers, and a second metal layer. A part of a depletion region is formed between each first trench well and the epitaxy layer and between a body structure layer corresponding to the each first trench well and the epitaxy layer, and a rest part of the depletion region is formed between a second trench well corresponding to the each first trench well and the epitaxy layer.
Leadtrend Technology Corp.

Semiconductor device and manufacturing the semiconductor device

In a semiconductor device having a first p+-type base region, a second p+-type base region, a high-concentration n-type region selectively formed in an n-type silicon carbide epitaxial layer on an n+-type silicon carbide substrate; a p-type base layer formed on the n-type silicon carbide epitaxial layer; an n+-type source region and a p++-type contact region selectively formed in a surface layer of the p-type base layer; and a trench formed penetrating the p-type base layer and shallower than the second p+-type base region, in at least a part of the first p+-type base region, a region is shallower than the second p+-type base region as viewed from an element front surface side.. .
Fuji Electric Co., Ltd.

Semiconductor device and manufacturing the semiconductor device

Provided is a semiconductor device having a resistor including silicide layers and a polysilicon layer with impurities, and the resistor includes a plurality of boundary surfaces between the silicide layers and the polysilicon layer in a longitudinal direction of the resistor, permitting correction with one photomask when a resistance value of a resistor is deviated from a design value while suppressing upsizing of a semiconductor device. Further, provided is a method of manufacturing the semiconductor device, in which the resistance value is adjusted by changing one mask for forming the silicide layers to change the number of boundary surfaces between the silicide layers and the polysilicon layer, and change a length of the polysilicon layer..
Sii Semiconductor Corporation

Manufacture amoled pixel drive circuit

The present invention provides a manufacture method of an amoled pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be the switch thin film transistor of the amoled pixel driving circuit to reduce the leakage current of the switch thin film transistor, and the p type polysilicon thin film transistor manufactured by utilizing the solid phase crystallization is employed to be the drive thin film transistor of the amoled pixel driving circuit to promote the mobility, the equality and the reliability of the drive thin film transistor, and utilizing the p type thin film transistor to be the drive thin film transistor can form the constant current type oled element, which is more stable than the source follower type oled formed by the n type thin film transistor, and meanwhile, the parasitic capacitance is decreased with the top gate structure..
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Semiconductor structure and manufacturing method thereof

The present disclosure provides a semiconductor package device, which includes an interposer die. The interposer die includes a semiconductor substrate and a plurality of through-silicon-vias (tsvs) extending through the semiconductor substrate.
Taiwan Semiconductor Manufacturing Company Ltd.

Backside processed semiconductor device

A semiconductor device includes a first substrate having a first surface and a second surface opposite to the first surface, a shallow trench isolation in the first substrate, the shallow trench isolation having a first depth, the first depth being a distance from a bottom of the shallow trench isolation to the first surface of the first substrate, a transistor on the first surface of the first substrate, a first dielectric cap layer covering the first surface of the first substrate, a first interconnect structure on the first dielectric cap layer, a carrier substrate bonded to the first substrate through the first dielectric cap layer, a second dielectric cap layer on the second surface of the first substrate; and a through silicon via extending through the second dielectric cap layer, the shallow trench isolation, and the first dielectric cap layer, and connected to the first interconnect structure.. .
Semiconductor Manufacturing International (shanghai) Corporation

Low temperature poly silicon backboard, manufacturing the same and light-emitting device

The present disclosure provides a low temperature poly silicon (ltps) backboard, a method for manufacturing the ltps, and a light-emitting device. The ltps backboard includes: a base substrate, and a thin film transistor (tft) and a light blocking layer that are arranged above the base substrate, wherein the light blocking layer is arranged above the tft, and the light blocking layer is configured for preventing an irradiation light from irradiating onto the tft..
Boe Technology Group Co., Ltd.

Method of manufacturng solar cell

A method of manufacturing a solar cell is disclosed. The method of manufacturing the solar cell includes depositing an intrinsic amorphous silicon layer on a surface of a semiconductor substrate, depositing an amorphous silicon layer containing impurities on the intrinsic amorphous silicon layer to form a conductive region, and forming an electrode electrically connected to the conductive region.
Lg Electronics Inc.

Compositions and methods for removing ceria particles from a surface

A removal composition and process for cleaning post-chemical mechanical polishing (cmp) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and cmp contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials..
Entegris, Inc.

Method of preferential silicon nitride etching using sulfur hexafluoride

Embodiments of the invention describe substrate processing methods using non-polymerizing chemistry to preferentially etch silicon nitride relative to other materials found in semiconductor manufacturing. According to one embodiment, a processing method includes providing in a plasma processing chamber a substrate containing a first material containing silicon nitride and a second material that is different from the first material, forming a plasma-excited process gas containing sf6, and exposing the substrate to the plasma-excited process gas to preferentially etch the first material relative to the second material.
Tokyo Electron Limited

Method of forming patterns, patterns formed according to the method, and semiconductor device including the patterns

A method of forming patterns, patterns formed according to the method, and a semiconductor device including the patterns, the method including forming an etching subject layer on a substrate, forming a first layer on the etching subject layer such that the first layer has a projecting pattern, forming a second layer such that the second layer completely covers the projecting pattern of the first layer, partially removing the second layer such that a top of the projecting pattern is exposed and a patterned second layer remains at a side of the projecting pattern, removing the first layer such that a top of the etching subject layer is exposed, and etching the etching subject layer using the patterned second layer as an etching mask, wherein one of the first layer and the second layer is a carbon-containing layer and the other is a silicon-containing layer, and the silicon-containing layer is formed by coating a silicon-containing composition and heat-treating the same.. .
Samsung Sdi Co., Ltd.

Dry etching method

Disclosed is a dry etching method for etching a laminated film of silicon oxide layers and silicon nitride layers on a substrate. The dry etching method includes providing a mask on the laminated film, generating a plasma from a dry etching agent and etching the laminated film by the plasma through the mask under a bias voltage of 500 v or higher to form a through hole in the laminated film vertically to the layers, wherein the dry etching agent contains at least c3h2f4, an unsaturated perfluorocarbon represented by cxfy and an oxidizing gas, and wherein a volume of the unsaturated perfluorocarbon contained in the dry etching agent is 0.1 to 10 times a volume of the c3h2f4 contained in the dry etching agent..
Central Glass Company, Limited

Method of fabricating a tunnel oxide layer and a tunnel oxide layer for a semiconductor device

A method of fabricating a tunnel oxide layer for a semiconductor memory device, the method comprising: fabricating on a substrate a first oxide layer by a plasma oxidation process; and fabricating at least one further oxide layer by a furnace oxidation process, wherein during fabrication of the at least one further oxide layer, reactive gases penetrate the first oxide layer and react with the silicon substrate to form at least a first portion of the at least one further oxide layer beneath the first oxide layer.. .
X-fab Semiconductor Foundries Ag

Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions

A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench.
Infineon Technologies Ag

Protective film forming method

A protective film forming method is provided. In the method, substantially an entire surface of a silicon-containing underfilm is terminated with fluorine by supplying a fluorine-containing gas to the silicon-containing underfilm formed on a substrate having a surface including a plurality of recesses and a flat surface provided between the adjacent recesses.
Tokyo Electron Limited

Apparatuses, systems, and methods for ion traps

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (mw) rails and a number of radio frequency (rf) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces.
Honeywell International Inc.

Stationary induction apparatus core

An object of the present invention is to improve a mechanical strength and to ensure a low magnetic loss without using a supporting member even when amorphous ribbons are used for an inner core. To attain the object, a stationary induction apparatus core of the present invention includes an inner core formed from the amorphous ribbons and outer cores formed from silicon steel sheets, the outer cores being disposed on two sides of the inner core in a depth direction as opposed to a standing direction of the inner core in such a manner as to sandwich the inner core therebetween..
Hitachi, Ltd.

Pattern for increased coefficient of friction of input devices

Described are examples of an input device for use with a computing device. The input device includes a body having a plurality of surfaces, where the plurality of surfaces include a bottom surface composed of silicone and having a pattern of a plurality of apertures to provide a desired coefficient of friction..
Microsoft Technology Licensing, Llc

Atomic layer deposition bonding for heterogeneous integration of photonics and electronics

Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ald) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., al2o3) on a first surface of the compound semiconductor.
Juniper Networks, Inc.

Biomedical devices containing internal wetting agents

This invention includes a wettable biomedical device containing a high molecular weight hydrophilic polymer and a hydroxyl-functionalized silicone-containing monomer.. .
Johnson & Johnson Vision Care, Inc.

Modular chemiresistive sensor

The present invention relates to methods of forming modular chemiresistive sensors. The sensors preferably have two gold or platinum electrodes mounted on a silicon substrate with the electrodes connected to a power source and are separated by a gap of 0.5 to 4.0 μm.
Innosense Llc

Method for sampling and extracting pollutants in a fluid, sampling cartridge, sampling and extracting devices using said method

A sampling cartridge (1), a sampling device (2, 3), an extracting device (4) and a sampling and extracting device (5) which allow safe measurement without contamination of the adsorbent, before or after sampling. The sampling cartridge (1) comprises an envelope (10) made from an inert material in which an adsorbent material (13) is sealed, in a leaktight manner, by two caps (11, 12) located at the two ends (100, 101) of the envelope.
Ncx Sarl

Flexible light bar assembly

A flexible light bar assembly conforms onto a surface of any shapes and curvatures within a vehicle, is disclosed. The light bar assembly comprises, a flexible silicone housing, a light projection unit embedded within the silicone housing having a plurality of light emitting source.

Bond layer for ceramic or ceramic matrix composite

An article having a substrate that includes a ceramic or a ceramic matrix composite, a bond layer on the substrate that includes silicon metal and a boria stabilizing agent, and at least one additional layer on the bond layer.. .
Rolls-royce Corporation

Stain-resistant synthetic leather and manufacturing same

Provided a stain-resistant synthetic leather, including: (a) a polyurethane synthetic leather; (b) a silane-based coating layer formed on the polyurethane synthetic leather; and (c) a silicone coating layer formed on the silane-based coating layer, wherein the silane-based layer strengthens the binding between the polyurethane synthetic leather and the silicone coating layer, so that the stain-resistant synthetic leather can exhibit texture and flexibility of natural leather per se, and can exhibit excellent water resistance, stain resistance, weather resistance, and wear resistance through the silane-based coating layer and silicone coating layer formed on the polyurethane synthetic leather.. .

Multicolored siilicone synthetic leather and preparing method

A multicolored silicone synthetic leather includes an a colored silica layer, a b colored silica layer and a substrate sequentially disposed from top to bottom. Colors of the a colored silica layer and the b colored silica layer are different.
Salirone Inc.

Method of manufacturing silicon carbide epitaxial substrate

A method of manufacturing a silicon carbide epitaxial substrate includes: performing degassing by heating a reaction chamber of a film formation apparatus; and using a gas including silicon atoms, a gas including carbon atoms, an ammonia gas, and a hydrogen gas serving as a carrier gas and having a dew point equal to or less than −100° c., epitaxially growing a silicon carbide layer on a surface of a silicon carbide single-crystal substrate within the reaction chamber.. .
Sumitomo Electric Industries, Ltd.

Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt

An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block.
Varian Semiconductor Equipment Associates, Inc.

Sealing anodized aluminum using a low-temperature nickel-free process

The inventive two-step process operates at low temperature, without any toxic heavy metals, to provide excellent sealing on anodized aluminum substrates, especially those aluminum substrates comprising silicon. The first step of the process seals the anodized surface and the second step passivates the anodized surface.
Macdermid Acumen, Inc.

Sapphire thin film coated substrate

A method to transfer a layer of harder thin film substrate onto a softer, flexible substrate. In particular, the present invention provides a method to deposit a layer of sapphire thin film on to a softer and flexible substrate e.g.
Hong Kong Baptist University

Near-eutectoid bearing steel

A near-eutectoid bearing steel having from 0.7 to 0.9 wt. % carbon, from 0.1 to 0.35 wt.
Aktiebolaget Skf

Cell-holding container and cell culture method using same

A cell-holding container comprises: an elastic body for holding cells including at least any one of adherent cells at least one selected from the group consisting of stem cells, progenitor cells, somatic cells and germ cells, and suspended cells at least one selected from the group consisting of blood cells, t cells and b cells; and the elastic body is formed of a rubber material containing a rubber component including an additional crosslinking silicone rubber and is able to hold the cells.. .
Asahi Rubber Inc.

A forming oxide quantum dots and uses thereof

A method of forming oxide quantum dots is disclosed. The method may provide for the highly controlled formation of the oxide quantum dots.
Fuzhou Danlaw Xicheng Electronic Technology Co. Ltd.

Pressure-sensitive adhesive film and the use thereof for protecting surfaces

The invention relates to a pressure-sensitive adhesive film that comprises a backing coated on one side with a rubber adhesive containing at least 5 wt % of tackifying resin, and on the other side with a silicone epoxy varnish. Said adhesive film is suitable for temporary protection of surfaces, notably of metal surfaces..
Novacel

Silicone gel composition and silicone gel cured product

(in the formula, r3 is a homogeneous or heterogeneous monovalent hydrocarbon group, m is at least one metal selected from among nickel and niobium, and f is 2 when m is nickel and 4 or 5 when m is niobium.). .

Degradable resin pellet and molded product using same

The present invention relates generally to a degradable resin pellet and a molded article produced using the same. More specifically, the present invention provides a degradable resin pellet comprising a composition comprising 100 parts by weight of polylactic acid (pla), 50 to 150 parts by weight of calcium carbonate (caco3), 0.1 to 10 parts by weight of magnesium, 0.1 to 10 parts by weight of aluminum, 0.1 to 10 parts by weight of silicon, and 0.5 to 20 parts by weight of calcium; wherein the composition is mixed with, based on 100 parts by weight of the polylactic acid (pla), 50 to 150 parts by weight of polyvinyl alcohol (pva), and wherein the composition is further mixed with, based on 100 parts by weight of the polylactic acid (pla), 50 to 150 parts by weight of polyethylene (pe)..

Composition for forming coating film and forming coating film using same

[problem] to provide a composition for forming a coating layer having excellent gas barrier performance and a method of forming the coating layer. [means for solution] a composition for forming a coating film comprising a specific silicon compound which reacts with a polysilazane by exposure, a polysilazane and an organic solvent, and a method for forming a coating layer comprising coating the composition on a substrate and exposing..
Az Electronic Materials (luxembourg) S.a.r.l.

Organosilicon compounds having (meth)acrylate groups and a process for preparation thereof

(meth)acrylate-functionalized silicon compounds are easily prepared by the reaction of a (meth)acryloyl-functionalized chlorosilane with an organosilicon compound having silicon-bonded hydroxy groups. The carbon atom adjacent to the resulting o—si linkage is bonded to at least one further carbon, rendering the product stable to hydrolysis despite the c—o—si linkage..
Wacker Chemie Ag

Polymer with alternating phenylene silicon and siloxane structure and producing precursor of the same

A polymer with alternating phenylene silicon and siloxane structure and a method of producing a precursor of the same are introduced to develop an autonomous synthesis process for para-phenylene disilanol monomer compounds and design a technique of purifying the polymer with alternating phenylene silicon and siloxane structure easily, so as to enable mass production of the polymer with alternating phenylene silicon and siloxane structure.. .
National Chung Shan Institute Of Science And Technology

Compositions and methods for curing concrete

A composition that may be used to retain moisture within fresh concrete as it cures to optimize the curing of the concrete may include one or more hardening and densifying agents (e.g., alkali metal polysilicate, colloidal silica, etc.) and one or more temporary moisture sealing agents (e.g., a wax, etc.). Additionally, such a composition may include a siliconate (e.g., a metal siliconate, such as an alkali metal siliconate like potassium methyl siliconate, etc.).
Advanced Concrete Technologies Llc

Pressed and self sintered polymer derived sic materials, applications and devices

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (sioc) and silicon carbide (sic) materials having 3-nines, 4-nines, 6-nines and greater purity.
Pallidus, Inc.

Focus ring and producing focus ring

The present invention provides a focus ring having favorable plasma resistance. In addition, the present invention provides a method for producing a focus ring which enables the easy production of focus rings having favorable plasma resistance.
Sumitomo Osaka Cement Co., Ltd.

Silicon-based materials containing indium and methods of forming the same

A ceramic component is generally provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and about 0.001% to about 85% of an in-containing compound. For example, the silicon-based layer can be a bond coating directly on the surface of the substrate.
General Electric Company

Reduction of metal/semi-metal oxides

This invention is concerned with the reduction of metal and/or semi-metal oxides. More particularly the invention relates to a method and apparatus adapted to produce silicon by reduction of silicon oxides.
Northeastern University

Yolk-shell-structured material, anode material, anode, battery, and forming same

A yolk-shell-structured material (16, 59, 59a, 74) is disclosed as including a plurality of silicon nano-particles (12, 54, 54a, 62) and a cavity (16, 60, 80, 84) enclosed by a micron-sized shell (18, 72) made of carbon nano-particles (14, 56, 58). A method of forming a yolk-shell-structured material with silicon nano-particles (12) and a cavity (16) enclosed by a micron-sized shell (18) made of carbon nano-particles (14) is disclosed as including (a) providing a micron-sized cornstarch core (10), (b) forming a layer of nano silicon-particle (12) on the cornstarch core (10), (c) forming a micron-sized shell (18) of carbon nano-particles (14) on the layer of nano silicon-particle (12), and (d) removing the cornstarch core (10) by heating..
Winsky Technology Hong Kong Limited

Micro-electro-mechanical system (mems) structures and design structures

Micro-electro-mechanical system (mems) structures, methods of manufacture and design structures are disclosed. The method includes forming a micro-electro-mechanical system (mems) beam structure by venting both tungsten material and silicon material above and below the mems beam to form an upper cavity above the mems beam and a lower cavity structure below the mems beam..
International Business Machines Corporation

Micro-electro-mechanical system (mems) structures and design structures

Micro-electro-mechanical system (mems) structures, methods of manufacture and design structures are disclosed. The method includes forming a micro-electro-mechanical system (mems) beam structure by venting both metal material and silicon material above and below the mems beam to form an upper cavity above the mems beam and a lower cavity structure below the mems beam..
International Business Machines Corporation

Capacitive micromachined ultrasonic transducer and fabricating the same

A capacitive micromachined ultrasonic transducer and a method of fabricating the same are provided. The capacitive micromachined ultrasonic transducer includes a device substrate including a first trench defining a plurality of first portions corresponding to an element and a second trench spaced apart from the first trench; a supporting unit provided on the device substrate, the supporting unit defining a plurality of cavities; a membrane provided on the supporting unit to cover the plurality of cavities; a top electrode electrically connected to a second portion in the second trench through a via hole penetrating through the membrane and the supporting unit; and a through silicon via (tsv) substrate provided on a bottom surface of the device substrate, the tsv substrate including a first via metal connected to the plurality of first portions corresponding to the element and a second via metal connected to the second portion..
Samsung Electronics Co., Ltd.

Micro-emitters for electrospray systems

Micro-emitter arrays and methods of microfabricating such emitter arrays are provided. The microfabricated emitter arrays incorporate a plurality of emitters with heights greater than 280 microns with uniformity of +/−10 microns arranged on a supporting silicon substrate, each emitter comprising an elongated body extending from the top surface of the substrate and incorporating at least one emitter tip on the distal end of the elongated body thereof.
California Institute Of Technology

High-molecular polysilane and the production thereof for producing pre-ceramic molded bodies

A method produces a polysilane by reacting at least two silane monomers and at least one alkali metal. The silane monomers have the following structural units: at least one aryl group, at least one alkyl group, at least one alkenyl group, and at least three halogen atoms.
Bjs Ceramics Gmbh

Lightweight material

Disclosed herein is a novel approach to producing a lightweight component. The lightweight component is produced of a much lighter material than has been used before, produced by a process of mixing a compound containing uncured silicone and a volume of microspheres, and then dispensing this material into a mold.
4m Company

Catalyst ta-nb for the production of 1,3-butadiene

The invention relates to a catalyst that comprises a mesoporous oxide matrix, with said matrix comprising at least one oxide of an element x that is selected from among silicon and titanium, taken by itself or in a mixture, with said catalyst comprising at least the tantalum element and the niobium element, with the tantalum mass representing between 0.1 to 30% by weight of the mass of the mesoporous oxide matrix, the niobium mass representing between 0.02 to 6% by weight of the mass of the mesoporous oxide matrix, the content by mass of the tantalum element being greater than or equal to the content by mass of the niobium element. The invention also relates to the use of this catalyst in a method for the production of 1,3-butadiene from a feedstock that comprises at least ethanol..
Compagnie Generale Des Etablissements Michelin

Mesoporous mixed oxide catalyst comprising silicon

A mesoporous mixed oxide catalyst that comprises silicon and at least one metal m that is selected from the group that consists of the elements of groups 4 and 5 of the periodic table and mixtures thereof, with the mass of metal m being between 0.1 and 20% of the mixed oxide mass.. .
Compagnie Generale Des Etablissements Michelin

Wash resistant compositions containing aminosilicone

Compositions and methods are disclosed for imparting a long-wearing color to keratin fibers, including hair. More specifically, the invention relates to cosmetic compositions and methods for improving retention of particulate materials, such as pigments, on hair to artificially color the hair and/or to impart other aesthetic benefits to the hair.
Avon Products, Inc.

Straightening agent containing a polymer combination of polyurethanes and amodimethicones

The invention relates to cosmetic agents for temporarily shaping keratin fibers, a method for temporarily shaping keratin fibers using said agents, and the use of said agents for temporarily shaping keratin fibers. The polymer combination of at least one specific anionic polyurethane polymer and a specific silicone-containing cationic copolymer used according to the invention results in excellent straightening properties and excellent protection of hair from damage during straightening..
Henkel Ag & Co. Kgaa

Hair care composition comprising cationic surfactant system, silicone, and metal salt

Disclosed is a hair care composition comprising: a cationic surfactant system comprising a mono-long alkyl cationic surfactant and a di-long alkyl cationic surfactant; a silicone compound having an amine or a quaternary ammonium group, and an alkylene oxide group; and further comprising a metal salt other than metal pyrithione. The compositions of the present invention provide improved deposition of the metal salts on scalp..
The Procter & Gamble Company

Hair cosmetic

(c) a silicone.. .

Silicon oxide-coated iron oxide composition for coating comprising iron oxide particles coated with silicon oxide

The present invention provides a composition for coating having high ultraviolet ray protection ability for a coating material, and properties required for a coating material such as texture, appearance, designability and weather resistance. The composition is a silicon oxide-coated iron oxide composition for coating comprising iron oxide particles, a primary particle diameter of which is 1 nm or more and 50 nm or less, wherein at least a part of the surface of said iron oxide particles is coated with silicon oxide, and wherein said composition comprises an iron oxide particle dispersion having the average molar absorption coefficient of 1500 li(mol·cm) or more for the light of the wavelengths from 190 nm to 380 nm in a state that said coated iron oxide particles are dispersed in a dispersion medium.
M. Technique Co., Ltd.

Soft filled prosthesis shell with discrete fixation surfaces

A soft prosthetic implant shell, such as a silicone breast implant shell, that has discrete fixation surfaces thereon for tissue adhesion. The fixation surfaces may be provided on the posterior face of the shell, as well as either on the periphery or at discrete areas on the anterior face.
Allergan, Inc.

Compression molded silicone ring

A method of manufacturing a silicone ring consisting of two outer-band halves formed by compression silicone-molding in a first mold and an inner-band formed by placing half of the outer-bands of the ring in a second mold, placing a spacer-insert mold over the second mold, inserting a silicone rubber in the cavities of a spacer-insert mold, inserting the remaining outer-band halves into a fourth mold, inserting the three molds into a compression chamber to vulcanize the outer-band halves and the inner-band together, wherein the first and second outer-bands form a complete ring, and a symmetrical inner-band is formed in between the first and second outer-band halves.. .
Qalo, Llc

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Silicon-controlled rectifier-compatible constant-voltage circuit, led dimming circuit, and related led lighting apparatus

The present disclosure provides a silicon-controlled rectifier (scr)-compatible constant-voltage circuit. The circuit includes an input undervoltage control module, an overpower protection module, a controllable load module, and a power conversion module.
Sengled Optoelectronics Co., Ltd.

Operation and stabilization of mod-mux wdm transmitters based on silicon microrings

A transmitter comprising a plurality of modulator and multiplexer (mod-mux) units, each mod-mux unit operating at an optical wavelength different from the other mod-mux units. The transmitter can additional include in each mod-mux unit two optical taps and three photodetectors that are configured to allow the respective mod-mux unit to be tuned to achieve thermal stabilization and achieve effective modulation and wdm operation across a range of temperatures.
Elenion Technologies, Llc

Grounding scheme for power converters with silicon carbide mosfets

Systems and methods for grounding power generation systems with silicon carbide mosfet power converters are provided. A power generation system can include a power generator comprising a multiphase rotor configured to generate multiphase alternating current power at a first voltage and a power converter comprising one or more silicon carbide mosfets and an isolation transformer.
General Electric Company

Ground fault isolation for power converters with silicon carbide mosfets

Systems and methods for grounding power generation units with silicon carbide mosfet power converters are provided. A power generation unit can include a power generator configured to generate multiphase alternating current power at a first voltage.
General Electric Company

Lithium ion secondary battery

Use of a silicon-based material in a negative electrode of a lithium ion secondary battery results in a decrease in discharge capacity and an increase in internal resistance. In order to overcome this, the lithium ion secondary battery according to the present invention is characterized in having a negative electrode comprising a carbon nanotube having a peak between 2600 and 2800 cm−1 in a raman spectrum obtained by raman spectroscopy, a graphite, and a silicon oxide having a composition represented by siox (0<x≤2)..
Nec Corporation

Production negative electrode active material for non-aqueous electrolyte secondary battery, production negative electrode for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery

A production method of a negative electrode active material for non-aqueous electrolyte secondary batteries containing a silicon compound (siox: 0.5≤1.6) that contains li, includes: making a silicon compound into which the lithium has been inserted contact with a solution b containing a polycyclic aromatic compound or a derivative thereof or both thereof (here, the solution b contains one or more kinds selected from an ether-based solvent, a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, and an amine-based solvent as the solvent); and making the silicon compound contact with a solution c (here, the solution c contains one or more kinds selected from an alcohol-based solvent, a carboxylic acid-based solvent, and water as the solvent). Thereby, a production method of a negative electrode active material for non-aqueous electrolyte secondary batteries is capable of increasing a battery capacity and improving the cycle characteristics..
Mitsui Chemicals, Inc.

Processes to fabricate porous silicon and its use as feedstock for secondary battery electrodes

Provided are processes to form microporous silicon useful as mi active material in an electrode of an electrochemical cell the processes including subjecting a mixture of silicon oxide and a metal reducing agent, optionally aluminum, to mechanical milling to form mechanically activated silicon oxide/aluminium, thermally treating the silicon oxide/aluminium to reduce the silicon oxide and form si/al2o3 and removing at least a portion of the alumina from the si to form a microporous silicon. The resulting electrochemically active microporous silicon is also provided with residual alumina present at 15% by weight or less that demonstrates excellent cycle life and safety..
Navitas Systems, Llc

Current compliance layers and memory arrays comprising thereof

Provided are novel compositions of current compliance layers (ccls) as well as novel methods of fabricating such ccls and novel architectures of arranging ccls and memory cells in memory arrays. A ccl may comprise one of sulfur (s), selenium (se), and tellurium (te).
Intermolecular, Inc.

Ultrasonic probe and manufacturing the same

Provided are an ultrasonic probe and a method of manufacturing the same. The method includes: forming a plurality of grooves by removing regions of a first insulating layer and a first silicon wafer from a first substrate including the first silicon wafer and the first insulating layer; bonding a second substrate including a second silicon wafer, a second insulating layer, and a silicon thin layer to the first substrate, such that the plurality of grooves turn into a plurality of cavities; removing the second silicon wafer from the second substrate; forming transducer cells on regions of the second insulating layer corresponding to the plurality of cavities; and forming a plurality of unit substrates by cutting the first substrate, the silicon thin layer, and the second insulating layer..
Samsung Medison Co., Ltd.

Process refining photoconverter to bond-package led and refinement equipment system

Provided are a process method for bond-packaging an led using a refined photoconverter, and a refining equipment system. The process method includes the following continuous process flow: roll-shaping of a special-shaped microporous carrier sheet, refining of a semi-cured photoconversion sheet, preparation of a flip chip led array sheet, forming of led package elements by roll-bonding, curing of the led package elements, and cutting of the led package elements.
Jiangsu Cherrity Optronics Co., Ltd.

Semiconductor device and a manufacturing method thereof

In a semiconductor device including a split gate type monos memory, and a trench capacitor element having an upper electrode partially embedded in trenches formed in the main surface of a semiconductor substrate, merged therein, the flatness of the top surface of the upper electrode embedded in the trench is improved. The polysilicon film formed over the semiconductor substrate to form a control gate electrode forming a memory cell of the monos memory is embedded in the trenches formed in the main surface of the semiconductor substrate in a capacitor element formation region, thereby to form the upper electrode including the polysilicon film in the trenches..
Renesas Electronics Corporation

Semiconductor device and manufacturing semiconductor device

In a first main surface side of a silicon carbide semiconductor base, a trench is formed. A second base region of a second conductivity type is arranged at a position facing the trench in a depth direction.
Fuji Electric Co., Ltd.

Semiconductor device

A nitride semiconductor device is disclosed. The semiconductor device includes a semiconductor stack with a top layer containing gallium (ga) and nitrogen (n), electrodes of a source, a gate and a drain provided on the semiconductor stack, and a silicon nitride (sin) film provided on the gan layer between the drain electrode and the gate electrode but apart from the gate electrode.
Sumitomo Electric Device Innovations, Inc.

Method for manufacturing semiconductor device

A manufacturing method of a semiconductor device including a step of forming a silicon layer over a formation substrate, a step of forming a resin layer over the silicon layer, a step of forming a transistor over the resin layer, a step of forming a conductive layer over the silicon layer and the resin layer, and a step of separating the formation substrate and the transistor. The resin layer has an opening over the silicon layer.
Semiconductor Energy Laboratory Co., Ltd.

Low resistivity wrap-around contacts

Low resistivity, wrap-around contact structures are provided in nanosheet devices, vertical fets, and finfets. Such contact structures are obtained by delivering dopants to source/drain regions using a highly conformal, doped metal layer.
International Business Machines Corporation

Iii-v mosfet with self-aligned diffusion barrier

A field effect transistor is provided which includes a plurality of fins, at least a portion of a given fin including a respective source region, and a raised source disposed at least partially on the fins and including iii-v material. The field effect transistor further includes a diffusion barrier disposed at least partially on the raised source and including transition metal bonded with silicon or germanium, and a gate stack capacitively coupled at least to the respective source regions of the fins..
International Business Machines Corporation

Co-integration of elastic and plastic relaxation on the same wafer

An n-doped field effect transistor (nfet) section of an integrated device logic region is provided. The nfet section includes a semiconductor substrate, a layer at least partially formed of silicon germanium (sige) disposed on the semiconductor substrate and fin formations.
International Business Machines Corporation

Semiconductor device and manufacturing semiconductor device

In a first main surface of a silicon carbide semiconductor base, a trench is formed. On a first main surface side of the silicon carbide semiconductor base, an n-type silicon carbide epitaxial layer is deposited.
Fuji Electric Co., Ltd.

Fully depleted silicon-on-insulator (fdsoi) transistor device and self-aligned active area in fdsoi bulk exposed regions

Methods for eliminating the distance between a bulex and soi and the resulting devices are disclosed. Embodiments include providing a silicon layer on a box layer on a silicon substrate; forming two active areas in the silicon layer, separated by a space; forming first and second polysilicon gates over one active area, a third polysilicon gate over the space, and fourth and fifth polysilicon gates over the other active area, the second and fourth gates abutting edges of the space; forming spacers at opposite sides of each gate; removing the second, third, and fourth gates and the corresponding spacers; removing the silicon layer and box layer in the space, forming a trench and exposing the silicon substrate; forming second spacers on sidewalls of the trench; forming raised source/drain regions on each active area; and forming a p-well contact on the silicon substrate between the second spacers..
Globalfoundries Inc.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a non-volatile memory and a logic circuit. The non-volatile memory includes a stacked structure comprising a first insulating layer, a floating gate, a second insulating layer, a control gate and a third insulating layer stacked in this order from a substrate; an erase gate line; and a word line.
Taiwan Semiconductor Manufacturing Co., Ltd.

Finfet cmos with silicon fin n-channel fet and silicon germanium fin p-channel fet

A substrate having a silicon region and a silicon germanium region is provided. A first set of fins in the silicon region and a second set of fins in the silicon germanium region is etched into the substrate.
International Business Machines Corporation

Structure and equal substrate to channel height between n and p fin-fets

A method for fabricating fin field effect transistors comprises creating a pattern of self-aligned small cavities for p-type material growth using at least two hard mask layers, generating a pre-defined isolation area around each small cavity using a vertical spacer, selectively removing n-type material from the self-aligned small cavities, and growing p-type material in the small cavities. The p-type material may be silicon germanium (sige) and the n-type material may be tensile silicon (t-si).
International Business Machines Corporation

Semiconductor device and manufacturing the same

A method for manufacturing a semiconductor is provided. A first oxide layer is formed on a substrate.
Samsung Electronics Co., Ltd.

Replacement channel etch for high quality interface

Techniques are disclosed for customization of fin-based transistor devices to provide a diverse range of channel configurations and/or material systems, and within the same integrated circuit die. Sacrificial fins are removed via wet and/or dry etch chemistries configured to provide trench bottoms that are non-faceted and have no or otherwise low-ion damage.
Intel Corporation

Epitaxial silicon wafer

An epitaxial silicon wafer includes a silicon wafer consisting of a cop region in which a nitrogen concentration is 1×108−3×109 atoms/cm3, and an epitaxial silicon film formed on the silicon wafer. When heat treatment for evaluation is applied, a density of bmd formed inside the silicon wafer is 1×108−3×109 atoms/cm3 over the entire radial direction of the silicon wafer.
Sumco Corporation

Formulations to selectively etch silicon germanium relative to germanium

Compositions useful for the selective removal of silicon germanium materials relative to germanium-containing materials and silicon-containing materials from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required sige:ge removal selectivity and etch rates..
Entegris, Inc.

Silicon chalcogenate precursors and methods of forming the silicon chalcogenate precursors

A silicon chalcogenate precursor comprising the chemical formula of si(xr1)nr24-n, where x is sulfur, selenium, or tellurium, r1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each r2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed..
Micron Technology, Inc.

Buffer layer to inhibit wormholes in semiconductor fabrication

Reducing wormhole formation during n-type transistor fabrication includes providing a starting structure, the starting structure including a semiconductor substrate, a n-type source region and a n-type drain region of a transistor. The method further includes removing a portion of each of the n-type source region and the n-type drain region, the removing creating a source trench and a drain trench, and forming a buffer layer of silicon-based material(s) over the n-type source region and n-type drain region that is sufficiently thick to inhibit interaction between metal contaminants that may be present below surfaces of the n-type source trench and/or the n-type drain trench, and halogens subsequently introduced prior to source and drain formation.
Globalfoundries Inc.

Formation of siocn thin films

Methods for depositing silicon oxycarbonitride (siocn) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (peald) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen.
Asm Ip Holding B.v.

Selective siarc removal

Methods and systems for selective silicon anti-reflective coating (siarc) removal are described. An embodiment of a method includes providing a substrate in a process chamber, the substrate comprising: a resist layer, a siarc layer, a pattern transfer layer, and an underlying layer.
Tokyo Electron Limited

Plasma processing method and plasma processing apparatus

In a plasma processing method, a carbon-containing film is formed on surfaces of components in a chamber by using a plasma of a carbon-containing gas, and a silicon-containing film whose film thickness is determined based on a film thickness of the carbon-containing film is formed on a surface of the carbon-containing film by a silicon-containing gas. Then, a target object is loaded into the chamber and processed by a plasma of a processing gas after the formation of the silicon-containing film.
Tokyo Electron Limited

Display substrate, display panel and display device

The present disclosure provides a display substrate, a display panel and a display device. The display substrate includes a display region and a peripheral region surrounding the display region.
Shanghai Tianma Micro-electronics Co.,ltd.

Liquid crystal display device

The purpose of the invention is to suppress a color shift when the screen is viewed in an oblique direction. The structure to countermeasure the problem is: a liquid crystal display device comprising; a liquid crystal layer is sealed between a first substrate and a second substrate, a first insulating film including a silicon oxide film (sio) on the first substrate, a second insulating film including a silicon nitride film (sin) covering the first insulating film, a third insulating film including a silicon oxide film (sio) covering the second insulating film, wherein a thickness of the second insulating film is between 190 nm and 270 nm..
Japan Display Inc.

Silicon waveguide coupling alignment apparatus

A silicon waveguide coupling alignment apparatus includes a fine adjustment bracket, a stress releasing clamp and a silicon photonic integrated chip force sensor. A silicon photonic integrated chip is fixed on the silicon photonic integrated chip force sensor, at least a part of an optical fiber to be coupled is fixed on one end of the stress releasing clamp, the stress releasing clamp is arranged on the fine adjustment bracket, an end surface of the optical fiber to be coupled is aligned with an end surface of the silicon photonic integrated chip by adjusting a position of the fine adjustment bracket, and a cushioning mechanism is arranged within the stress releasing clamp to cushion a collision force in a direction perpendicular to the end surface of the optical fiber to be coupled.
Accelink Technologies Co., Ltd.

Monolithically-integrated, polarization-independent circulator

A polarization-independent, optical circulator is formed in silicon photonics. The polarization-independent, optical circulator uses an optical splitter having two couplers and two waveguides joining the two couplers.
Skorpios Technologies, Inc.

Copackaging of asic and silicon photonics

A system and method for packing optical and electronic components. A module includes an electronic integrated circuit and a plurality of photonic integrated circuits, connected to the electronic integrated circuit by wire bonds or by wire bonds and other conductors.
Rockley Photonics Limited

Scintillator array

There is provided a scintillator array to be used for a neutron detector capable of detecting high energy neutrons with high definition and high efficiency. A scintillator array comprises a structure including a plurality of stacks layered each other.
Toshiba Materials Co., Ltd.

Hot surface igniters and methods of making same

A method of making a hot surface igniter is described. A silicon carbide composition that includes both fines fraction and a coarse fraction is sintered in a nitrogen and argon reducing atmosphere in a manner that controls the incorporation of nitrogen with in the lattice of recrystallized silicon carbide.
Specialized Component Parts Limited, Inc.

Piston compression rings of copper alloys

A piston ring is made from a copper-nickel-silicon-chromium alloy. This material permits the top compression ring of a piston to be moved closer to the piston crown, reducing crevice volume and reducing the tendency for pre-ignition.
Materion Corporation

Environmentally friendly wallpaper with weathering resistance and contaminating resistance and preparing method

An environmentally friendly wallpaper with weathering resistance and contaminating resistance includes a substrate layer and a silicone rubber layer composite and connected together. The wallpaper is prepared by a process of calendering and attaching-pressing for patterning-vulcanizating.
Salirone Inc.

Scald-resistant synthetic leather and preparing method

A scald-resistant synthetic leather includes a silicone layer and a high-temperature resistant substrate disposed in sequence from top to bottom. A preparing method includes coating and vulcanizating a silicone slurry on the high-temperature resistant substrate, after coating the silicone slurry, sending the high-temperature resistant substrate and the silicone slurry to a drying tunnel for vulcanization to allow attachment of the silicone layer and the high-temperature resistant substrate; after the vulcanization, peeling the silicone layer and the high-temperature resistant substrate apart to obtain the scald-resistant synthetic leather; the number of processes of coating and vulcanizating is more than one, and a thickness for a single coating is 0.02-3 mm; a total thickness for coating is 0.2-0.5 mm.
Salirone Inc.

Method for making gallium nitride epitaxial layer by silicon substrate

The disclosure relates to a method for making gallium nitride (gan) epitaxial layer by silicon substrate is related. The method includes: providing a silicon substrate; providing a carbon nanotube structure comprising a plurality of carbon nanotubes and defining a plurality of holes; forming the carbon nanotube structure on a surface of the silicon substrate so that portions of the silicon substrate are exposed; dry etching the silicon substrate using the carbon nanotube structure as mask to obtain a patterned silicon substrate having a pattern surface comprising a plurality of bulges; and growing the gan epitaxial layer using the patterned silicon substrate as an epitaxial substrate..
Hon Hai Precision Industry Co., Ltd.

Devices and methods for electrochemical liquid phase epitaxy

Electrochemical liquid phase epitaxy (ec-lpe) processes and devices are provided that can form precipitated epitaxial crystalline films or layers on a substrate. The precipitated films may comprise a semiconductor, such as germanium, silicon, or carbon.
The Regents Of The University Of Michigan

A nickel-based alloy

A nickel-based alloy composition consisting, in weight percent, of: between 12.3 and 15.2% chromium, between 4.8 and 12.0% cobalt, between 2.5 and 8.3% tungsten, between 0.0 and 0.5% molybdenum, between 0.0 and 0.5% rhenium, between 3.5 and 6.7% aluminium, between 6.1 and 10.7% tantalum, between 0.0 and up to 0.5% hafnium, between 0.0 and 0.5% niobium, between 0.0 and 0.5% titanium, between 0.0 and 0.5% vanadium, between 0.0 and 0.1% silicon, between 0.0 and 0.1% yttrium, between 0.0 and 0.1% lanthanum, between 0.0 and 0.1% cerium, between 0.0 and 0.003% sulphur, between 0.0 and 0.05% manganese, between 0.0 and 0.05% zirconium, between 0.0 and 0.005% boron, between 0.0 and 0.01% carbon, the balance being nickel and incidental impurities.. .
Oxford University Innovation Limited

Nitride fluorescent material, producing the same, and light emitting device

A method for producing a nitride fluorescent material having high emission luminance can be provided. The method includes heat-treating a raw material mixture containing silicon nitride, silicon, an aluminium compound, a calcium compound, and a europium compound..
Nichia Corporation

Methods for recovering hydrocarbon materials from subterranean formations

A method for recovering hydrocarbon material from a subterranean formation includes introducing a treatment fluid into the subterranean formation. One treatment fluid includes at least one organometallic material having a metal or metalloid from group iii of the periodic table or a transition metal.
Aculon, Inc

Self-adhesive multi-layer item and the production thereof

5) optionally at least one layer of silicone release coating rc applied on the bottom face si2 of the dorsal support do and which is prepared by application and irradiation of said curable silicone composition c, and on this same layer, there is at least one adhesive psa, preferably at least one pressure-sensitive adhesive psa.. .

Water based silicone coating compositions

A high temperature coating includes a silicone resin, a mass of nanoclay particles dispersed in the silicone resin, a surfactant and water.. .
Hamilton Sundstrand Corporation

Subsurface modified silica materials

Methods and compositions related to subsurface modified silica materials are described. The silica materials include silicon- and carbon-containing groups covalently bonded to the silicon-oxygen matrix.
International Business Machines Corporation

Antifouling composition

An antifouling thermoplastic polyurethane (tpu) composition has a surface energy of from about 18 to about 26 mj/m2. The antifouling tpu composition comprises the reaction product of: (a) a polyetherol; (b) a silicone polyol; (c) a chain extender different than said polyetherol and said silicone polyol; and (d) an isocyanate.
Basf Se

Siloxane crosslinking processes employing sulfur compounds and platinum catalysts

Provided is a composition and process for producing a crosslinked product. The composition comprises a mixture constituting (a) an alkenyl silicone, (b) a hydrogen siloxane, (c) a cure inhibitor and (d) a hydrosilylation catalyst, optionally in the presence of a solvent, and (e) sulfur compounds in order to produce the crosslinked product, and the process comprises reacting such a composition to form a crosslinked product..
Momentive Performance Materials Inc.

Polyurethane/urea silicon carbide nanocomposite

Polyurethane/urea nanocomposites, precursors thereof, and methods of their manufacture and use are provided, the nanocomposites comprising: a) a polyurethane/urea polymer matrix, and b) surface modified silicon carbide nanoparticles dispersed within and covalently bound to a polyurethane/urea polymer comprising the polyurethane/urea polymer matrix. In some embodiments, the surface modified silicon carbide nanoparticle comprises a silicon carbide core and a linking group covalently bound to the surface of the silicon carbide core and covalently bound to the polyurethane/urea polymer.
3m Innovative Properties Company

Elastic roll for electrophotographic manufacturing the same

An elastic roll 10 for an electrophotographic apparatus includes a shaft body 12, and a foamed elastic body layer 14 provided on an outer periphery of the shaft body 12, wherein the foamed elastic body layer 14 consists of a silicone rubber foamed body including a plurality of air bubbles 18 in its base material containing cross-linked silicone rubber and a reinforcement material, and wherein the foamed elastic body layer has a communication degree of 40% or more. It is preferable that the elastic roll 10 should further include a skin layer 14a in the foamed elastic body layer 14 on an outer peripheral side..

Process for preparing organosilicon compounds containing organyloxy groups

Synthesis of organyloxyfunctional organosilicon compounds is facilitated by a two-step process using a basic lithium, guanidine or amidine catalyst in the first step, and a phosphorus compound having a p═o linkage in a second step.. .
Wacker Chemie Ag

Method for preparing pentachloropyridine by utiilizing dctf rectifying short steaming residues

A method for preparing pentachloropyridine by utilizing dctf rectifying short steaming residues, comprising the following steps: converting polymers in the residues through in situ catalytic cracking and vacuum distillation by using the catalytic degradation function of a catalyst formed by aluminum oxide, silicon oxide, zirconia, 4a zeolite, magnesium oxide, mordenite and hzsm-5 zeolite on the polymers in the dctf rectifying short steaming residues into small molecular compounds and obtaining pentachloropyridine-containing crude oil; washing the pentachloropyridine-containing crude oil by using an aqueous solution of an alkaline assistant formed by sodium carbonate, potassium carbonate, sodium bicarbonate, potassium bicarbonate, ammonium bicarbonate and sodium hydroxide, carrying out reduced pressure rectification, refrigerating crystallization, vacuum filtration or centrifuging separation, solvent washing, and vacuum drying method sequentially to obtain a pentachloropyridine product with a mass percentage content greater than 95% at a yield being 1-15% of the mass of the dctf rectifying short steaming residues.. .
Yancheng Institute Of Technology

Method of melt infiltration utilizing a non-wetting coating for producing a ceramic matrix composite

A method of melt infiltration for producing a ceramic matrix composite comprises applying a non-wetting coating onto one or more outer surfaces of a porous fiber preform. The non-wetting coating comprises a non-wetting material with which molten silicon has a contact angle of at least about 45°.
Rolls-royce High Temperature Composites Inc.

Carbon yielding resin for melt infiltration

Methods for forming a ceramic matrix composite from a melt infiltrated and melt extracted preform that has residual silicon within open pore channels therein are provided. The method may include: introducing a carbon yielding resin into the open pore channels; heating the preform to produce elemental carbon from the carbon yielding resin within the open pore channels; and further heating the elemental carbon to react with the residual silicon to form sic within the open pore channels to form the ceramic matrix composite..
General Electric Company

Melt infiltration with siga and/or siin alloys

Methods for forming a ceramic matrix composite (cmc) are generally provided. The method may include melt infiltrating a silicon mixture into a ceramic matrix composite preform, with the silicon mixture including siga, siin, or a mixture thereof.
General Electric Company

Method for forming sintered ceramic material

A ca—sialon ceramic with enhanced mechanical properties and a method employing micron-sized and submicron precursors to form the ca—sialon ceramic. The ca—sialon ceramic comprises not more than 42 wt % silicon, relative to the total weight of the ca—sialon ceramic.
King Fahd University Of Petroleum And Minerals

A treating silicon carbide fibers

A method of treating at least one silicon carbide fiber, the method including a) putting at least one silicon carbide fiber presenting an oxygen content that is less than or equal to 1% in atomic percentage into contact with an oxidizing medium in order to transform the surface of the fiber chemically and form a surface layer of silica; b) eliminating the resulting silica layer by putting the fiber obtained after performing step a) into contact with an acid liquid medium comprising at least hydrofluoric acid; and c) depositing an interphase layer on the surface of the fiber obtained after performing step b).. .
Safran Ceramics

Method for the thermal treatment of granular material composed of silicon, granular material composed of silicon, and producing a monocrystal composed of silicon

Granular silicon which is especially useful in reducing dislocations and gas inclusions of single crystals prepared therefrom is produced by a heat treatment in which a process gas flowing through a plasma chamber heats granular silicon, and the heated granular silicon is transported counter-currently through the plasma chamber, melting an outer periphery of the granular silicon, which then recrystallizes, producing an exterior with a lower concentration of crystal grains than the interior of the granules.. .
Siltronic Ag

Tire tread rubber composition

Provided is a rubber composition for a tire tread, which includes 1 or greater parts by mass and less than 20 parts by mass of a millable silicone rubber compound per 100 parts by mass of a diene rubber, wherein the millable silicone rubber compound has a storage modulus of 0.3 to 10 kpa at a 450% shear strain at 110° c. And a glass transition temperature and a plasticity with a relationship: 14000<(273+tg)×pn<82000, where tg is the glass transition temperature (° c.) and the pn is the plasticity at 23° c..
The Yokohama Rubber Co., Ltd.

Antifogging article and automobile glass

There are provided an antifogging article and automobile glass that not only satisfy a good antifogging property and abrasion resistance but also have a good appearance. An antifogging article includes: a transparent base; and an antifogging layer which is provided on the transparent base and which made of an epoxy resin cured material containing a silicon atom and an aluminum atom, wherein, in the antifogging layer, an antifogging time (t35) in a 35° c.
Asahi Glass Company, Limited

Silicone optics

Silicone-containing light fixture optics. A method for manufacturing an optical component may include mixing two precursors of silicone, opening a first gate of an optic forming device, moving the silicone mixture from the extrusion machine into the optic forming device, cooling the silicone mixture as it enters the optic forming device, filling a mold within the optic forming device with the silicone mixture, closing the first gate, and heating the silicone mixture in the mold to at least partially cure the silicone.
Abl Ip Holding Llc

Process for producing a silicon carbide-containing body

The present invention relates to a process for producing a silicon carbide-containing body (100), characterized in that the process has the following process steps: a) providing a mixture (16) comprising a silicon source and a carbon source, the silicon source and the carbon source being present together in particles of a solid granular material; b) arranging a layer of the mixture (16) provided in process step a) on a carrier (12), the layer of the mixture (16) having a predefined thickness; and c) treating the mixture (16) arranged in process step b) over a locally limited area with a temperature within a range from ≥1400° c. To ≤2000° c.
Universität Paderborn

Process for continuous production of stable silicone emulsions

Organopolysiloxane emulsions which are stable and of large particle size are produced in controllable fashion using a cylindrical mixer having multiple inlets and axially displaced rotor stator units.. .
Wacker Chemie Ag

Portal with septum embedded indicia

An implantable portal includes a septum that has embedded therein an indicia adapted to identify at least one characteristic of the portal. The indicia may be formed as an impression at a base layer of the septum, and is filled with a radiopaque material.
Smiths Medical Asd, Inc.

Use of american ginseng to counteract cannabis-induced intoxication

A composition and method for the use of panax quinquefolius for the attenuation of cannabis-induced dysphoria where dosage can be effectively administered in a gum base cold pressed into a tablet containing at least 300 mg of panax quinquefolius and maltitol, sorbitol, isomalt, xylitol, natural & artificial flavors, vegetarian magnesium stearate, sucralose and silicon dioxide.. .
Engen Medical Corporation

Prophylactic leukotriene inhibitor and implant displacement therapy for prevention and treatment of capsular contracture in silicone breast augmentation

A method of treating or preventing capsular contracture in a patient resulting from surgical insertion of a silicone breast implant in a surgically created implant pocket. The method includes administering to the patient a therapeutically effective amount of a leukotriene receptor antagonist prior to the formation of a capsular contracture in the patient.

Fusogenic liposome-coated porous silicon nanoparticles

The disclosure describes a fusogenic liposome-coated porous silicon nanoparticles for high loading efficiency of anionic payloads (small molecules, dyes, nucleic acids), and for non-endocytic delivery of hydrophilic and lipophilic payloads by membrane fusion. The liposome coating can be further modified with targeting peptides or antibodies via covalent binding chemistry between the ligands and functionalized poly(ethylene glycol).
The Regents Of The University Of California

Oil-in-water emulsion and method

A method of preparing an oil-in-water emulsion comprises combining (a) an organopolysiloxane including at least two silicon-bonded hydrolysable or hydroxyl groups and (b) an organic oil to give a mixture. The method further comprises combining the mixture, (c) an aqueous medium and (d) a surfactant to form an initial emulsion.
Dow Corning Corporation

Bone intramedullary fixation scaffold

A new shape changing bone implant and instrument for the fixation of structures to include bone tissue. This new implant stores elastic mechanical energy to exert force on fixated structures to enhance their security and in bone affect its healing response.

Engery-discriminating photon-counting detector and the use thereof

The present approaches relates to the use of silicon-based energy-discriminating, photon-counting detectors, such as for use in x-ray based imaging including computed tomography. The described approaches address the resolution and classification of x-ray photons affected by compton scatter, which may be detected as having energy levels below their proper level due to collision or deflection events..
General Electric Company

Synthetic polymer film having surface that is provided with bactericidal action, and film comprising same

A synthetic polymer film (34a) having a surface which has a plurality of raised portions (34ap), (34bp), wherein a two-dimensional size of the plurality of raised portions (34ap), (34bp) is in a range of more than 20 nm and less than 500 nm when viewed in a normal direction of the synthetic polymer film (34a), (34b), the surface having a microbicidal effect. The synthetic polymer film (34a), (34b) includes a urethane resin and a silicone oil, and the silicone oil has a hlb value of not less than 14 and not more than 18..
Sharp Kabushiki Kaisha

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Shin-etsu Chemical Co., Ltd.

. .

Device heat dissipation method

According to this method of heat dissipation, a first heat dissipation sheet is pasted on an internal wall surface of a wall of a housing, and a second heat dissipation sheet is pasted on an external wall surface of the wall of the housing so that the wall of the housing is positioned between the first heat dissipation sheet and the second heat dissipation sheet. The first and the second heat dissipation sheets include a heat conductive layer, a heat radiation layer adjacent to a first surface of the heat conductive layer, and a base adjacent to a second surface of the heat conductive layer.
Shin-etsu Chemical Co., Ltd.

Pam4 signal generation apparatus

A pam4 signal generation apparatus is provided. The pam4 signal generation apparatus includes a dfb, two ea modulators, an soa, a psr, a direct-current power source, two electrical-signal generators, and two amplitude-limiting amplifiers.
Hisilicon Optoelectronics Co., Limited

Systems and methods for bootstrapping ecosystem certificate issuance

An ecosystem for managing a public key infrastructure (pki) includes an electronic device having at least one silicon component, an ecosystem manager configured to create at least one pki keypair, a root certificate, and a bootstrapping certificate, and a device manufacturer configured to integrate into the electronic device the at least one silicon component. The device manufacturer is further configured to integrate into the at least one silicon component a public key of the at least one pki keypair and the bootstrapping certificate.
Cable Television Laboratories, Inc

Method and system for silicon photonics wavelength division multiplexing transceivers

Methods and systems for silicon photonics wavelength division multiplexing transceivers are disclosed and may include, in a transceiver integrated in a silicon photonics chip: generating a first modulated output optical signal at a first wavelength utilizing a first electrical signal, generating a second modulated output optical signal at a second wavelength utilizing a second electrical signal, communicating the first and second modulated output optical signals into an optical fiber coupled to the chip utilizing a multiplexing grating coupler in the chip. A received input optical signal may be split into a modulated input optical signal at the first wavelength and a modulated input optical signal at the second wavelength utilizing a demultiplexing grating coupler in the chip.
Luxtera, Inc.

Ratiometric control of optical devices

Embodiments of the invention comprise a photonic integrated circuit (pic) including an optical device and a silicon integrated circuit (ic) (such as an application specific ic (asic)) including a controller for the optical device. The pic and silicon ic are integrated on a shared substrate.
Aurrion, Inc.

Built-in self test for loopback on communication system on chip

In an example, the present invention includes an integrated system-on-chip device. The device is configured on a single silicon substrate member.
Inphi Corporation

Power converter for doubly fed induction generator wind turbine systems

Power converters for use in wind turbine systems are included. For instance, a wind turbine system can include a wind driven doubly fed induction generator having a stator and a rotor.
General Electric Company

Filter device for power converters with silicon carbide mosfets

Filter devices for use in power conversion systems utilizing silicon carbide mosfets are provided. A power conversion system can include a power converter configured to convert power from a first power to a second power.
General Electric Company

Power converter for energy systems

Power converters for use in energy systems are included. For instance, an energy system can include an input power source configured to provide a low voltage direct current power.
General Electric Company

Integrated laser with dbr-mrr mirror and multiple drop ports that provide balanced power

An integrated laser that provides multiple outputs includes a reflective silicon optical amplifier (rsoa) having a reflective end with a reflective coating and an interface end. It also includes an optical waveguide optically coupled to the rsoa.
Oracle International Corporation

Wavelength-tunable external-cavity laser and adjustable light emission module

A wavelength-tunable external cavity laser comprises a semiconductor optical amplifier chip and a laser external cavity, the laser external cavity comprising a grid filter, a phase adjustor and a silicon-based micro-ring chip, the grid filter and the silicon-based micro-ring chip constituting a wavelength-tunable optical filter which implements wavelength tuning by spectral tuning of the grid filter and/or the silicon-based micro-ring chip. A micro-ring filter in the silicon-based micro-ring chip of the tunable external-cavity laser is manufactured by adopting a mature silicon light technology, which can greatly reduce a manufacturing difficulty of the adjustable filter, and reduce the manufacturing cost of a device.
Accelink Technologies Co., Ltd.

Formation machine for polymer li-ion battery with 64 channels

A 64-channel polymer lithium ion battery formation fixture machine is disclosed, comprising a machine frame, wherein, further comprising a pressure control device, a 64-channel laminate, a temperature control cabinet and a battery formation cabinet; the pressure control device is mounted on the machine frame, and the 64-channel laminate is mounted on the pressure control device; the 64-channel laminate comprises a heating plate, a fixture pressure plate, a temperature sensor, a connecting chain, a guide block, a silicon plate and a battery tab contact pin for clamping tab of the polymer lithium ion battery, a plurality of fixture pressure plates are arranged in parallel, and the polymer lithium ion battery is clamped between two fixture pressure plates; the heating plate is attached to the surface of the fixture pressure plate for clamping polymer lithium ion battery, and the silicon plate is attached to the surface opposite to the heating plate; the temperature sensor is mounted inside the fixture pressure plate, and the end of the fixture pressure plates are interconnected by the connecting chain. This utility model integrates the pressing, heating and formation in one fixture, reducing the transferring steps between processes..
Zhejiang Hangke Technologies Co., Ltd

Lithium titanate powder for electrode of energy storage device, active material, and electrode sheet and energy storage device using the same

Provided is a lithium titanate powder for an electrode of an energy storage device containing li4ti5o12 as its main component, wherein, the specific surface area determined by a bet method is 5 m2/g or more, as peak intensity obtained by x-ray diffraction measurement of the lithium titanate powder, when a peak intensity that derives from a (111) plane of li4/3ti5/3o4 is considered to be 100, a sum of a peak intensity that derives from a (101) plane of anatase-type titanium dioxide, a peak intensity that derives from a (110) plane of rutile-type titanium dioxide, and a value calculated by multiplying 100/80 to a peak intensity that derives from the (−133) plane of li2tio3 is 1 or less, and a ratio i/i0, a ratio of diffraction integrated intensity i of a (111) plane of li4ti5o12 to diffraction integrated intensity i0 of a (111) plane of si, which are obtained by x-ray diffraction measurement of a lithium titanate powder containing a silicon powder obtained by adding the silicon powder (nist standard reference material 640d) as an internal standard sample to the lithium titanate powder by 10 mass % in outer percentage, is 5 or more, active material containing the lithium titanate powder, and an energy storage device using the active material.. .
Ube Industries, Ltd.

Negative electrode active material for secondary battery and secondary battery including the same

Provided are a negative electrode active material for a secondary battery, in which a silicon-based negative electrode active material is formed in a three-layer structure including an amorphous matrix, thereby suppressing a dispersal phenomenon of the negative electrode active material during charging/discharging. The negative electrode active material having a three-layer structure includes: a silicon (si) layer; an amorphous matrix layer outside the si layer; and a nano grain matrix layer formed on an interface between the si layer and the amorphous matrix layer..
Iljin Electric Co., Ltd.

Negative electrode material for lithium-ion batteries and use therefor

A negative electrode material for a lithium ion battery, including silicon-containing particles, artificial graphite particles and a carbonaceous material, wherein at least part of the silicon-containing particles, the artificial graphite particles and the carbonaceous material form composite particles; wherein the silicon-containing particles are silicon particles having a siox (0<x≤2) layer on the particle surface, having an oxygen content of 1.0 mass % or more and 18.0 mass % or less, and mainly containing particles having a primary particle diameter of 200 nm or less; wherein the artificial graphite particles are non-flaky artificial graphite particles and have a 50% particle diameter in a volume-based cumulative particle size distribution, d50, of 1.0 μm or more and 15.0 μm or less. Also disclosed is a lithium-ion battery including a negative electrode using the negative electrode material..
Umicore

Conductive polymer/si interfaces at the backside of solar cells

The present invention relates to a solar cell (1) comprising a substrate (2) of p-type silicon or n-type silicon, wherein the substrate (2) comprises—a front side (2a) the surface of which is at least partially covered with at least one passivation layer (3) and—a back side (2b), wherein—the back side (2b) of the substrate (2) is at least partially covered with a passivation layer (4) having a thickness sufficient to allow a transport of holes through it, and—the passivation layer (4) on the backside 2b) of the substrate (2) is at least partially cov-ered with a conductive polymer layer (5). The present invention also relates to a process for the preparation of a solar cell, to a solar cell obtainable by this process and to a solar module..
Institut Fur Solarenergieforschung Gmbh

Silicone-organic resin composite laminate and manufacturing method thereof, and light-emitting semiconductor apparatus using the same

The invention provides a silicone-organic resin composite laminate comprising a laminate in which an organic resin layer containing an inorganic fiber cloth into which a thermosetting organic resin has been impregnated, and a silicone resin layer containing an inorganic fiber cloth into which a curable silicone resin has been impregnated, being laminated with each one or more layers, and metal foils laminated at an uppermost surface and a lowermost surface of the laminate. There can be provided a silicone-organic resin composite laminate which has low linear expansion, good thermal dimensional stability, excellent mechanical characteristics, and excellent heat resistance and light resistance, and is suitable as a mounting substrate for an led which corresponds to increase in luminance of the led mounted substrate..
Shin-etsu Chemical Co., Ltd.

Photon extraction from ultraviolet light-emitting devices

In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (uv) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to uv light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent..

Method for manufacturing heterojunction with intrinsic thin layer solar cell

A heterojunction with intrinsic thin layer (hit) solar cell has a crystalline si substrate, an intrinsic amorphous si layer, a doped amorphous si layer, a transparent conductive layer and two electrode layers. The intrinsic amorphous si layer disposed between the doped amorphous si layer and the crystalline silicon substrate contacts the doped amorphous si layer and the crystalline silicon substrate.
National Taiwan Normal University

Methods to introduce sub-micrometer, symmetry-breaking surface corrugation to silicon substrates to increase light trapping

Provided is a method for fabricating a nano-patterned surface. The method includes forming a mask on a substrate, patterning the substrate to include a plurality of symmetry-breaking surface corrugations, and removing the mask.
Stc.unm

Display apparatus and manufacturing the same

A display apparatus includes a thin film transistor on a first base substrate, the thin film transistor including a gate electrode disposed on the first base substrate, an active pattern disposed on the first base substrate and including a semiconductor layer including of amorphous silicon and an ohmic contact layer which is on the semiconductor layer, a drain electrode disposed on the ohmic contact layer and having a first thickness, and a source electrode disposed on the ohmic contact layer and having a second thickness which is greater than the first thickness.. .
Samsung Display Co., Ltd.

Semiconductor device and manufacturing semiconductor device

A manufacturing method of a semiconductor device includes forming an amorphous silicon film on an insulation surface, forming a silicon oxide film using an oxidation treatment from the amorphous silicon film, forming an oxide semiconductor layer above the silicon oxide film, forming a gate insulating film above the oxide semiconductor layer, and forming a gate electrode interposed by the gate insulating film above the oxide semiconductor layer.. .
Japan Display Inc.

Metal oxide semiconductor device having recess and manufacturing method thereof

The present invention provides a mos (metal-oxide-silicon) device and a manufacturing method thereof. The mos device includes: a semiconductor substrate, a gate, a source, a drain, and two ldds (lightly-doped-drains).
Richtek Technology Corporation

3d semiconductor device and structure

A 3d semiconductor device, the device including: a first layer including first transistors each including a silicon channel; a second layer including second transistors each including a silicon channel, the second layer overlaying the first transistors, where at least one of the second transistors is at least partially self-aligned to at least one of the first transistors; and a third layer including third transistors each including a single crystal silicon channel, the third layer underlying the first transistors, where a plurality of the third transistors form a logic circuit, and where the logic circuit is aligned to the second transistors with less than 200 nm alignment error, where the first layer thickness is less than one micron, and where the first transistor is a junction-less transistor.. .
Monolithic 3d Inc.

Method of manufacturing soi lateral si-emitter sige base hbt

A soi lateral heterojunction si-emitter sige-base bipolar transistor is provided that contains an intrinsic base region that includes a small band gap region (i.e., a silicon germanium alloy base of a first conductivity type) and a large band gap region (i.e., a silicon region of the first conductivity type) a silicon emitter of a second conductivity type that is opposite the first conductivity type is formed on the large-band gap side of the intrinsic base region and a silicon collector of the second conductivity type is formed on the small-band gap side of the intrinsic base region.. .
International Business Machines Corporation

Metal oxide semiconductor device having mitigated threshold voltage roll-off and threshold voltage roll-off mitigation method thereof

The present invention provides a mos (metal-oxide-silicon) device having mitigated threshold voltage roll-off and a threshold voltage roll-off mitigation method therefor. The mos device includes: a substrate, a well region, an isolation region, a gate, two ldds (lightly-doped-drains), a source, a drain and a compensation doped region.
Richtek Technology Corporation

Strain retention semiconductor member for channel sige layer of pfet

A pfet includes a semiconductor-on-insulator (soi) substrate; and a trench isolation within the soi substrate, the trench isolation including a raised portion extending above an upper surface of the soi substrate. A compressive channel silicon germanium (csige) layer is over the soi substrate.
Globalfoundries Inc.

Display device

A display device is disclosed. The display device includes a substrate including first to fourth subpixels, a first buffer layer positioned on the substrate, the first buffer layer including a silicon nitride layer and a silicon oxide layer, and a thin film transistor and an organic light emitting diode positioned on the first buffer layer.
Lg Display Co., Ltd.

Semiconductor led display devices

The subject of this invention is a full-color display device based on iii-nitride semiconductors. The display device includes an array of micro-leds, monolithically integrated on a single chip of the epitaxially grown led heterostructure, and flip-chip bonded to a silicon backplane of active matrix driving circuits, and color conversion layers.

Manufacturing thin film transistor and manufacturing array substrate

The invention provides a manufacturing method of a thin film transistor and a manufacturing method of an array substrate. A photoresist is used to define a to-be-doped region of an amorphous silicon layer to thereby make a crystallization be occurred in a source contact region and a drain contact region.
Shenzhen China Star Optoelectronics Technology Co. Ltd.

Display panel and display apparatus

A display panel and a display apparatus are provided. The display panel includes: a substrate; multiple first-layer wires disposed on the substrate; and an insulating dielectric layer disposed on the first-layer wires.
Chongqing Hkc Optoelectronics Technology Co., Ltd.

Display panel and manufacturing method thereof

A display panel and a manufacturing method are provided. The display panel includes a substrate, multiple active switches disposed on the substrate and a low dielectric constant protective layer.
Chongqing Hkc Optoelectronics Technology Co., Ltd.

Method for fabricating semiconductor device

A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a periphery region; forming a first buried gate and a second buried gate in the substrate on the memory region; forming a first silicon layer on the substrate on the periphery region; forming a stacked layer on the first silicon layer; forming an epitaxial layer on the substrate between the first buried gate and the second buried gate; and forming a second silicon layer on the epitaxial layer on the memory region and the stacked layer on the periphery region.. .
Fujian Jinhua Integrated Circuit Co., Ltd.

Bit line gate structure of dynamic random access memory (dram) and forming method thereof

A method of forming a bit line gate structure of a dynamic random access memory (dram) includes the following. A hard mask layer is formed on a metal stack by a chemical vapor deposition process importing nitrogen (n2) gases and then importing amonia (nh3) gases.
Fujian Jinhua Integrated Circuit Co., Ltd.

Method of manufacturing a semiconductor device

The present invention proposes a method of manufacturing a semiconductor device, which includes the steps of providing a substrate with a memory region and a logic region, forming bit lines and logic gates respectively in the memory region and the logic region, wherein storage node regions are defined between bit lines, forming a first low-k dielectric layer on sidewalls of bit lines, forming a doped silicon layer in the storage node regions between bit lines, wherein the top surface of doped silicon layer is lower than the top surface of bit line, forming a second low-k dielectric layer on sidewalls of storage node regions, and filling up storage node regions with metal plugs.. .
Fujian Jinhua Integrated Circuit Co., Ltd.

Semiconductor device and manufacturing method thereof

In a method for manufacturing a semiconductor device, a doped layer doped with a first dopant is formed in a substrate. A semiconductor layer is formed on the doped layer.
Taiwan Semiconductor Manufacturing Co., Ltd.

Semiconductor device and corresponding manufacturing method

A semiconductor device includes a semiconductor body having a first silicon carbide region and a second silicon carbide region which forms a pn-junction with the first silicon carbide region, a first metallization on a front side of the semiconductor body, a contact region that forms an ohmic contact with the second silicon carbide region, and a barrier-layer between the first metallization and the contact region and that is in ohmic connection with the first metallization and the contact region. The barrier-layer forms a schottky-junction with the first silicon carbide region, and includes molybdenum nitride or tantalum nitride.
Infineon Technologies Ag

Silicon-controlled rectifiers having a cathode coupled by a contact with a diode trigger

Silicon-controlled rectifiers, electrostatic discharge circuits, and methods of fabricating a silicon-controlled rectifier for use in an electrostatic discharge circuit. A device structure for the silicon controlled rectifier includes a first well of a first conductivity type in a semiconductor layer, a second well of a second conductivity type in the semiconductor layer, a cathode coupled with the first well, and an anode coupled with the second well.
Globalfoundries Inc.

Cowos structures and forming the same

Chip on wafer on substrate structures and methods of forming are provided. The method includes attaching a first die and a second die to an interposer.
Taiwan Semiconductor Manufacturing Company, Ltd.

3d semiconductor device and structure

A 3d semiconductor device, the device including: a first single crystal layer including a plurality of first transistors; at least one metal layer interconnecting the first transistors, a portion of the first transistors forming a plurality of logic gates; a plurality of second transistors overlaying the first single crystal layer; at least one connection from the plurality of first transistors to a plurality of through silicon vias (tsvs); a plurality of third transistors overlaying the plurality of second transistors, where the plurality of second transistors are self-aligned to the plurality of third transistors having been processed following the same lithography step; and a first memory array and a second memory array, where the first memory array includes the plurality of second transistors and the second memory array includes the plurality of third transistors.. .
Monolithic 3d Inc.

Bent-bridge semiconductive apparatus

A bent-bridge semiconductive apparatus includes a silicon bridge that is integral to a semiconductive device and the silicon bridge is deflected out of planarity. The silicon bridge may couple two semiconductive devices, all of which are from an integral processed die..

Semiconductor device having through-silicon-via and methods of forming the same

Semiconductor devices having a through-silicon-via and methods of forming the same are described herein. As an example, a semiconductor device may include a substrate material, a through-silicon-via protrusion extending from the substrate material, a first dielectric material formed on the substrate material, a second dielectric material formed on the first dielectric material, and an interconnect formed on the through-silicon-via protrusion, where the interconnect formed is in an opening in the second dielectric material..
Micron Technology, Inc.

Peeling method, semiconductor device, and peeling apparatus

To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer..
Semiconductor Energy Laboratory Co., Ltd.

Method for fabricating semiconductor device

A silicon oxide film having at least one opening portion is formed, on a silicon substrate. A structural member formed of a material less prone to be etched by hydrofluoric acid than a silicon oxide film is formed, wherein the structural member is provided on the silicon oxide film and reaches the silicon substrate in the opening portion.
Mitsubishi Electric Corporation

Composition and polishing silicon carbide

The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a ph of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition.
Cabot Microelectronics Corporation

Method of selectively etching silicon oxide film on substrate

An etching method including: (a) providing a workpiece including a first region made of a first material and a second region made of a second material defining a recess, the first region filling the recess of the second region while covering the second region; (b) generating plasma of a first fluorocarbon gas to etch the first region until before exposing the second region; (c) generating plasma of a second fluorocarbon gas to form fluorocarbon deposits on the first region; (d) generating plasma of an inert gas to etch the first region by fluorocarbon radicals contained in the fluorocarbon deposits; and (e) repeating step (c) and step (d) one or more times until after exposing the second region. An etching rate of the first material of the first region is higher than that of the second material of the second region with respect to the second fluorocarbon gas..
Tokyo Electron Limited

Method for fabricating metal gate structure

A method for fabricating a metal gate structure includes following steps. A substrate is provided and followed by forming a high-k dielectric layer on the substrate.
United Microelectronics Corp.

Thin film transistor and fabricating the same

Disclosed are a thin film transistor and a method for fabricating the same, where annealing can be performed on a base substrate formed with a metal inductive layer to thereby perform metal induced crystallization so as to fabricate the bottom-gate low-temperature poly-silicon thin film transistor while dispensing with a shielding layer in a top-gate thin film transistor. Furthermore an amorphous-silicon layer can be converted into a poly-silicon layer due to metal induced crystallization, and the patterning process can be further performed on the poly-silicon layer to form a first doped zone corresponding to an active layer, and a second doped zone corresponding to a source and drain area, so that a channel area can be separated from the source and drain area to thereby guarantee the electrical performance of the thin film transistor..
Ordos Yuansheng Optoelectronics Co., Ltd.

Method and selective epitaxy

A method of forming a film on a substrate having silicon surfaces and dielectric surfaces includes precleaning the substrate; applying an inhibitor species to the dielectric surfaces; and exposing the substrate to a precursor while maintaining a temperature of less than about 600 degrees celsius.. .
Applied Materials, Inc.

Method for forming amorphous silicon multuple layer structure

The present invention provides a method for forming an amorphous silicon multiple layer structure, the method comprises the flowing steps: first, a substrate material layer is provided, next, a first amorphous silicon layer is formed on the substrate material layer, wherein the first amorphous silicon layer includes a plurality of hydrogen atoms disposed therein, afterwards, an uv curing process is performed to the first amorphous silicon layer, so as to remove the hydrogen atoms from the first amorphous silicon layer, finally, a second amorphous silicon layer is formed on the first amorphous silicon layer.. .
Fujian Jinhua Integrated Circuit Co., Ltd.

Semiconductor device and semiconductor device manufacturing method

If a sio2 film is formed on a semiconductor substrate using teos (tetraethylorthosilicate: si(oc2h5)4), carbon (c) may be mixed in the sio2 film in some cases. In a sio2 film, carbon may function as fixed charges.
Fuji Electric Co., Ltd.

Formation of siocn thin films

Methods for depositing silicon oxycarbonitride (siocn) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (peald) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen.
Asm Ip Holding B.v.

Array substrate, display panel and display device

An array substrate, a display panel and a display device are provided. The array substrate has a display area including display transistors and gate lines, and a non-display area surrounding the display area and including a gate driving circuit electrically connected to the gate lines.
Shanghai Avic Optoelectronics Co., Ltd.

Scan driver and display device including the same

A scan driver, includes a plurality of stage circuits, each of which includes a driving circuit unit providing an output signal and an inverter inverting the output signal of the driving circuit unit and generating a scan signal, in which the inverter includes a first transistor and a second transistor, which are complementarily operated, the first transistor is a p-type polysilicon transistor, and the second transistor is an n-type oxide semiconductor transistor. A display device may include the scan driver..
Samsung Display Co., Ltd

Dynamic holography non-scanning printing device

A printing device (106) includes a dynamic holography printing application configured to generate a laser control signal and a lcos-slm (liquid crystal on silicon spatial light modulator) control signal based on a two-dimensional content corresponding to a lithography mask. A laser source (110) generates a plurality of incident laser beams based on the laser control signal.
Dualitas Ltd.

Electro-optic device, electro-optic unit, and electronic apparatus

An electro-optic device includes a chip provided with a mirror and a drive element adapted to drive the mirror, a light-transmitting cover adapted to cover the mirror in a planar view, and a spacer having contact with one surface of the chip between the cover and the chip. The entire part of one surface of the chip having contact with the spacer is made of a firs material such as silicon oxide film having first thermal conductivity, and the spacer is made of a second material such as a quartz crystal having second thermal conductivity higher than the first thermal conductivity.
Seiko Epson Corporation

Nuclear spin polarization enhancing method through dynamic nuclear polarization by using soluble pentacene

An object is to provide a method for enhancing a nuclear spin polarization. Triplet dnp where a pentacene derivative represented by the following formula (a) is used as a polarizing agent enables an effective enhancement in nuclear spin polarization to be achieved.
Osaka University

Test socket, test socket manufacturing method, and jig assembly for test socket

A method of manufacturing a test socket includes preparing a printed circuit board (pcb) on which a bonding pad is disposed, bonding a conductive wire on the bonding pad, mounting, on an upper surface of the pcb, a space through which the bonding pad is exposed, mounting, on an upper surface of the space, a base through which the bonding pad is exposed, mounting, on an upper surface of the base, a jig which covers the bonding pad, and injecting a liquid silicone rubber into a jig assembly by using the jig assembly as a mold, the jig assembly including the pcb, the space, the base, and the jig.. .
Okins Electronics Co.,ltd

Flexible and stretchable sensor using soft optical waveguides

A stretchable optical sensor that can detect multiple modes of deformation and contact, including pressure, strain, and bending. The method of operation involves a waveguide and a flexible housing, in one embodiment made of silicone rubber.
Carnegie Mellon University

Inner cabinet for regrigerator and refrigerator including the same

Embodiments of the present disclosure relate to an inner cabinet for a refrigerator formed of a ceramic material and a refrigerator including the same. One aspect of an inner cabinet for a refrigerator, the inner cabinet includes a ceramic material comprising at least one of silicon oxide and aluminum oxide as a main component, wherein the ceramic material has a ratio of an area occupied by pores per unit surface area in the range of 0.1 to 10%..
Samsung Electronics Co., Ltd

Method of making whisker reinforced high fracture toughness ceramic threaded fasteners

A high temperature fastener including a bolt and a nut, where the bolt and the nut are constructed of an aluminum oxide ceramic material reinforced with silicon-carbide crystal whiskers or silicon nitride.. .
The Boeing Company

Power converter for full conversion wind turbine systems

Power converters for use in wind turbine systems are included. For instance, a wind turbine system can include a full power generator having a stator and a rotor.
General Electric Company

Modified atmosphere melt infiltration

A ceramic matrix composite component for use in a gas turbine engine and method for making the same are described herein. The component includes a body and an outer region.
Rolls-royce Corporation

Heat treatable coated article having titanium nitride and nickel chrome based ir reflecting layers

Coated articles include two or more functional infrared (ir) reflecting layers sandwiched between at least dielectric layers. The dielectric layers may be of or including silicon nitride or the like.
Guardian Glass, Llc

Stabilized, high-doped silicon carbide

Stabilized, high-doped silicon carbide is described. A silicon carbide crystal is grown on a substrate using chemical vapor deposition so that the silicon carbide crystal includes a dopant and the strain compensating component.
Cree, Inc.

Method for producing silicon single crystals

A method for producing a plurality of silicon single crystals using a single quartz crucible by repeating a step of heating a silicon material charged in the quartz crucible within a chamber and a step of pulling a silicon single crystal from the silicon melt in the quartz crucible includes a first melting step of melting the silicon material fed to the quartz crucible used to pull a first silicon single crystal, and a second melting step of melting an additional amount of the silicon material fed to the quartz crucible used to pull the second and subsequent silicon single crystals. The interior of the chamber is set to be a first furnace pressure during the first melting step and then set to be a second furnace pressure higher than the first furnace pressure during the second melting step..
Sumco Corporation

Method and system for sculpting spacer sidewall mask

Provided is a method of forming a spacer sidewall mask, the method comprising: providing a substrate in a process chamber, the substrate having a carbon mandrel pattern and an underlying layer, the underlying layer comprising an amorphous silicon layer above a silicon nitride layer; performing a breakthrough etch process including growth of a conformal native silicon oxide layer, creating an ald patterned structure; performing a spacer sidewall sculpting process on the ald patterned structure; performing an amorphous silicon main etch (me) process on the ald patterned structure, the me process causing a spacer oxide open and carbon mandrel removal; and performing an amorphous silicon me over etch (oe) process on the ald spacer oxide pattern, the me oe process transferring the ald spacer oxide pattern into the amorphous silicon layer, generating a first sculpted pattern comprising a first sculpted sub-structure with a trapezoidal shape.. .
Tokyo Electron Limited

Alloy steel in which carburization is prevented by processing load and manufacturing the same

Provided herein is an alloy steel in which carburization is prevented by a processing load, the alloy steel including: about 0.13 to 0.25 wt % of carbon (c), about 0.6 to 1.5 wt % of silicon (si), about 0.6 to 1.5 wt % of manganese (mn), about 1.5 to 3.0 wt % of chromium (cr), about 0.01 to 0.1 wt % of niobium (nb), about 0.01 to 0.1 wt % of aluminum (al), about 0.05 to 0.5 wt % of vanadium (v), the balance iron (f), and impurities, based on the total weight of the alloy steel.. .
Kia Motors Corporation

Steel wire rod having coating film that has excellent corrosion resistance and workability, and producing same

The present invention provides a steel wire rod having a lubricating coating film, which can achieve both workabilities such as wire drawability, spike property and ball ironing property, and corrosion resistance such as long-term rust prevention property; and a method for producing the same. Disclosed are a steel wire rod having a coating film containing no phosphorus, wherein the coating film includes a lower layer coating film composed of oxide and/or hydroxide of zirconium and having a film thickness of 1.0 to 200 nm, and an upper layer coating film containing silicon and tungsten, in order from a steel wire rod side, a mass ratio of tungsten/silicon being in a range of 1.3 to 18; and a method for producing the above steel wire rod, which includes bringing an aqueous chemical conversion treatment solution, which has a ph in a range of 2.5 to 5.0 and contains a water-soluble zirconium compound dissolved therein, into contact with a surface of a steel wire rod to form a lower layer coating film..
Nihon Parkerizing Co., Ltd.

Composite material, manufacturing the same, and application the same

The composite material of the invention includes a plurality of quantum dots, a plurality of siloxane compounds, and a component. Each of the siloxane compounds has a plurality of amino groups.
Unique Materials Co., Ltd.

Water-based ink

The present invention relates to a water-based ink including a pigment, a water-insoluble polymer, an organic solvent and a surfactant, in which the organic solvent includes at least a glycol ether which has a viscosity of from 2.0 to 7.0 mpa·s and a vapor pressure from 0.01 to 7.0 hpa as measured at 20° c., and a content of a glycol ether having a viscosity of not less than 6.0 mpa·s as measured at 20° c. As a component of the glycol ether in the water-based ink is from 0 to 5% by mass; the surfactant includes a silicone-based surfactant and a content of the silicone-based surfactant in the water-based ink is from 0.005 to 0.3% by mass; a content of the organic solvent in the water-based ink is from 25 to 50% by mass; and a content of a high-boiling organic solvent in the water-based ink is not more than 5% by mass, an ink set for ink-jet printing including two or more kinds of water-based inks which are each constituted of the aforementioned water-based ink, and an ink-jet printing method including the steps of ejecting the aforementioned water-based ink onto a printing medium, and further ejecting the water-based ink onto the printing medium to overstrike the water-based ink onto the water-based ink that has been ejected onto the printing medium in the previous step.
Kao Corporation

Silicon-containing resin composition

A silicon-containing resin composition with which it is possible to form a silica-based coating film in which generation of cracks is minimized, a method for forming a silica-based coating film using the silicon-containing resin composition, and a crack-free silica-based coating film formed using the silicon-containing resin composition. The silicon-containing resin composition includes a silicon-containing resin and a solvent, in which one or more of siloxane resins and polysilanes is used as the silicon-containing resin, and the solvent contains a cycloalkyl acetate having a specific structure..
Tokyo Ohka Kogyo Co., Ltd.

Silicone compositions rapidly cross-linkable at ambient temperatures and methods of making and using same

Provided are rapidly cross-linkable silicone compositions, systems, kits, and methods for filling implanted medical devices in situ, the implanted medical devices, including for example, body implants and tissue expanders, the compositions including a platinum divinyl disiloxane complex; a low viscosity vinyl terminated polydimethylsiloxane; a low viscosity hydride terminated polydimethylsiloxane; and a silicone cross-linker, where the rapidly cross-linkable silicone composition has a viscosity of ≤150 cps for ≥1 min. Post-preparation and ≤300 cps ≤5 min.
Ethicon, Inc.

Silicone composition, silicone emulsion composition, and fiber treatment agent

(in the formula, rx is a c1-8 divalent hydrocarbon group, a is an integer of 0-4, ry are each independently a hydrogen atom, c1-10 monovalent hydrocarbon group, or acyl group, and at least one group shown by ry is hydrogen) and (b) 2-30 parts by mass of blocked polyisocyanate having two or more isocyanate groups per molecule, 50% or more of these isocyanate groups being blocked by a thermally dissociable blocking agent.. .

Carrier, catalyst, methods for producing them and producing ethylene oxide

A carrier for an ethylene epoxidation catalyst, the carrier comprising a porous alumina body formed of sintered particles of alumina in a substantial absence of inorganic binder species other than alumina, wherein the substantial absence of inorganic binder species corresponds to an amount of less than 0.6 wt % inorganic binder species other than alumina and comprises at least a substantial absence of silicon-containing species.. .
Noritake Co., Limited

Method for synthesizing high-purity ultrafine zrc-sic composite powder

A method for synthesizing high-purity ultrafine zrc—sic composite powder is provided. The high-purity ultrafine zrc—sic composite powder is prepared by utilizing zirconium silicate only or zirconium silicate with one or both of zirconium oxide or silica sol as a zirconium source and a silicon source material, utilizing sucrose or glucose as a carbon source material, and utilizing acrylamide monomer and n,n′-methylene diacrylamide cross-linking agent as a gel material..
Shandong Ul Traming Fine Ceramics Co., Ltd.

Porous alumina ceramic ware and preparation method thereof

Provided are a porous alumina ceramic ware and a preparation method thereof. The porous alumina ceramic material comprises the following components at the following percentages by mass: 40%-60% of alumina, 30%-50% of diatomaceous earth, and 6%-15% of silicon sol, wherein silicon dioxide makes up 25%-30% of the mass of the silicon sol..
Suntech Advanced Ceramics (shenzhen) Co., Ltd

Heat treatable coated article having titanium nitride based ir reflecting layer(s)

Coated articles include at least one functional infrared (ir) reflecting layer(s) sandwiched between at least dielectric layers. The dielectric layers may be of or including silicon nitride or the like.
Guardian Glass, Llc

Fet based sensory systems

This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor, multi-axis gyroscope or accelerometer.

Sublimation type thermal transfer sheet

A sublimation thermal transfer sheet having first, second, and third dye layers frame sequentially provided on a surface of a substrate in this order, and a back-face layer provided on another surface of the substrate. The first, second, and third dye layers contain an each individual sublimable dye and an each individual binder resin.
Dai Nippon Printing Co., Ltd.

Bonding process

The invention relates to a process for bonding a silicone or silicone based material to a polyurethane and use of the bonded silicone-polyurethane in the manufacture of biomaterials, devices, articles or implants, in particular long term implantable medical devices in the fields of cardiology, orthopaedics, plastic surgery and gastroenterology. The process involves the steps of (a) flame treating a surface of the silicone or silicone based material and (b) bonding the polyurethane to the flame treated surface of the silicone or silicone based material..
Aortech International Plc

Adhesive composition and flexible laminate

An adhesive composition is provided. The adhesive composition includes an organic silicon polymer, a silicon coupling agent, carboxylic polyester, and a solvent.
Taiflex Scientific Co., Ltd.

3d printing method utilizing heat-curable silicone composition

A method of forming a three-dimensional (3d) article comprises the steps of i) printing a first heat-curable silicone composition with a 3d printer to form a layer, ii) heating the layer to form an at least partially cured layer, iii) printing a second heat-curable silicone composition on the at least partially cured layer with the 3d printer to form a subsequent layer, and iv) heating the subsequent layer to form an at least partially cured subsequent layer. Optionally, steps iii) and iv) can be repeated with independently selected heat-curable silicone composition(s) for any additional layer(s) to form the 3d article.
Dow Corning Corporation

Device and the creation of 2d and 3d objects by using a 3d drawing pen

The object of the present invention consists of a device that allows for the easy creation of 2-dimensional and 3-dimensional plastic objects using a 3-d drawing pen. The device object of the present invention is comprised of a flexible, heat resistant, non-sticky, transparent silicon mat characterized by the presence of grooves cut in its surface the path of which can be of any geometric or non-geometric shape.

Screen plate for screening plants for mechanical classification of polysilicon

Polysilicon chunks or granules are classified into size fractions using a mechanical screen having a profiled surface having peaks and valleys, and terminating in widening slots through which a polysilicon size fraction falls. The device is effective and the slots are resistant to clogging..
Wacker Chemie Ag

Chip or silicon based feedthrough

This document discusses, among other things, systems and methods to fabricate and operate an implantable medical device. The implantable medical device can include a housing portion defining an interior chamber.
Cardiac Pacemakers, Inc.

Ventilation interface for sleep apnea therapy

The ventilation interface for sleep apnea therapy interfaces a ventilation device to the patient's airways. The ventilation interface includes a pair of nasal inserts made from flexible, resilient silicone which are oval shaped in cross-section and slightly tapered from a base proximal the ventilation supply to the distal tip end.
Innomed Healthscience, Inc.

Hair conditioner for wavy and curly hair

The present application discloses hair conditioning compositions which provide effective hair conditioning, particularly to wavy or curly hair, the conditioning benefit lasting in the hair over several (up to 10) subsequent shampooings. The compositions comprise a film-forming polyester that is the reaction product of at least one diol, at least one polyol, and at least one dicarboxylic acid; polyquaternium-52 and/or polyquaternium-37; and at least one amino or aminopropyl-functional silicone, in an aqueous vehicle.
Kao Usa, Inc.

Illuminated nipple shield

A nipple shield having an attached illuminated element containing a luminescent agent that illuminates for placement of a conventional nipple shield on a breast in darkened conditions. The nipple shield has a nipple portion and a base portion having a convex outer-facing surface and a concave breast-contacting surface, and the attachable illuminated element comprises a transparent silicone resin material, a luminescent agent interspersed within a portion of the resin material, and a binding surface comprising an adhesive material.

Silicone foam compositions rapidly cross-linkable at ambient temperatures and methods of making and using same

Provided are rapidly cross-linkable silicone foam compositions, kits, and methods for filling implanted medical devices in situ or in vivo, the implanted medical devices, including for example, body implants and tissue expanders, the compositions including a platinum divinyl disiloxane complex; a low viscosity vinyl terminated polydimethylsiloxane; a low viscosity hydride terminated polydimethylsiloxane; a silicone cross-linker; and a gas and/or gas-filled microcapsules, where the rapidly cross-linkable silicone foam composition has a viscosity of ≤150 cps for ≥1 min. Post-preparation and ≤300 cps≤5 min.
Ethicon, Inc.

Urine measurement device and method

A urine handling system capsule for releasing an oil mixture in the lumen of a urine handling system, the capsule comprising a capsule wall defining a space filled with an oil mixture, wherein the oil mixture comprises 90-100% of an oil selected from the group consisting of silicone fluids and mineral oils or a mixture thereof, and having a viscosity of at most 600 cst, and wherein the capsule wall is made of a water-soluble material. A urine measurement system comprising an oil mixture arranged in the luminal space of the measurement system.
Observe Medical Aps

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Commissariat A L'energie Atomique Et Aux Energies Alternatives

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Tokyo Ohka Kogyo Co., Ltd.

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Apparatus for controlling brightness of mobile phone screen

The present invention discloses an apparatus for controlling brightness of a mobile phone screen, which includes a light source module, configured to provide a light source for the mobile phone screen; a rectifier processing module connected to the light source module, configured to rectify an input power source; a silicon-controlled dimmer connected to the rectifier processing module, configured to adjust brightness of the light source; and a first constant current controller processing module connected to the rectifier processing module and the light source module, configured to provide an anode forward current necessary to sustain conduction of the silicon-controlled dimmer.. .
Beijing Taitan Technology Co. Ltd.

Embedded test circuit for physically unclonable function

There is disclosed a silicon integrated circuit comprising a physically unclonable function and an online or embedded test circuit, said online test circuit comprising one or more circuit parts being physically adjacent to said puf and said one or more circuits embodying one or more tests which can be performed to determine one or more quality properties of said puf or otherwise characterize it. Different tests with specific associated method steps are described..
Secure-ic Sas

High-efficiency semiconductor laser

Embodiments of the present disclosure may relate to a hybrid silicon distributed feed-back (dfb) laser, wherein light is to propagate through the dfb laser along a length of the dfb laser. The dfb laser may include a mesa with a current channel that extends from the first side of the mesa to the second side of the mesa.
Intel Corporation

Doping of selector and storage materials of a memory cell

Doping a storage element, a selector element, or both, of a memory cell with a dopant including one or more of aluminum (al), zirconium (zr), hafnium (hf), and silicon (si), can minimize volume or density changes in a phase change memory as well as minimize electromigration, in accordance with embodiments. In one embodiment, a memory cell includes a first electrode and a second electrode, and a storage element comprising a layer of doped phase change material between the first and second electrodes, wherein the doped phase change material includes one or more of aluminum, zirconium, hafnium, and silicon.
Intel Corporation

Arrangement

An arrangement is disclosed. In an embodiment the arrangement includes at least one semiconductor component and a heat sink, wherein the semiconductor component is arranged on the heat sink, wherein the heat sink is configured to dissipate heat from the semiconductor component, wherein the heat sink comprises a thermally conductive material, and wherein the material comprises at least aluminum and silicon..
Osram Opto Semiconductors Gmbh

Thin film transistor, fabricating the same, display substrate and display device

A thin film transistor, a method for fabricating the same, a display substrate, and a display device are disclosed. The method comprises: forming in sequence a light shielding layer, an insulating layer, and a semiconductor layer; and forming a pattern of the light shielding layer, the insulating layer, and the semiconductor layer in one patterning process.
Boe Technology Co., Ltd.

Thin film transistor, array substrate and their manufacturing methods, and display apparatus

The present disclosure discloses a thin film transistor, an array substrate and their manufacturing methods, and a display apparatus. The method for manufacturing the thin film transistor of the present disclosure comprises a step of forming an insulation layer, wherein the step of forming the insulation layer further comprises forming a siloxane material layer, oxidizing the siloxane material layer such that an inorganic silicon film is formed on a surface of the siloxane material layer, and curing the oxidized siloxane material layer to obtain the insulation layer.
Boe Technology Group Co., Ltd.

Silicon carbide semiconductor device and manufacturing silicon carbide semiconductor device

A silicon carbide semiconductor device, including a silicon carbide substrate, a drift layer provided on a front surface of the silicon carbide substrate, an embedded layer selectively provided in a surface layer of the drift layer, an epitaxial layer provided on the drift layer, a channel layer provided on the epitaxial layer, a source region selectively provided in a surface layer of the channel layer, a trench penetrating the source region and the channel layer and reaching the epitaxial layer, a gate electrode provided in the trench via a gate insulating film, a source electrode in contact with the channel layer and the source region, and a drain electrode provided on a rear surface of the silicon carbide substrate. The embedded layer is arranged underneath the trench in a depth direction.
Fuji Electric Co., Ltd.

Transistor having high electron mobility

A method for manufacturing a transistor having high electron mobility, encompassing a substrate having a heterostructure, in particular an algan/gan heterostructure, having the steps of: generation of a gate electrode by patterning a semiconductor layer that is applied onto the heterostructure, the semiconductor layer encompassing, in particular, polysilicon; application of a passivating layer onto the semiconductor layer; formation of drain regions and source regions by generation of first vertical openings that extend at least into the heterostructure; generation of ohmic contacts in the drain regions and in the source regions by partly filling the first vertical openings with a first metal at least to the height of the passivating layer; and application of a second metal layer onto the ohmic contacts, the second metal layer projecting beyond the passivating layer.. .
Robert Bosch Gmbh

Semiconductor structures and fabricating the same

A semiconductor structure is provided. The semiconductor structure includes a silicon substrate having a groove, an epitaxial layer disposed on the sidewalls of the groove, and a gate disposed above the epitaxial layer and electrically connected to the epitaxial layer.
Industrial Technology Research Institute

Method of manufacturing low temperature poly-silicon array substrate, array substrate, and display panel

The present disclosure proposes a method of manufacturing a low temperature poly-silicon array substrate, an array substrate and a display panel. The method includes: disposing a substrate, and forming a buffer layer on the substrate; depositing first gas mixture and doped ionized gas by using vapor deposition to form a doped amorphous silicon thin film on the buffer layer; depositing second gas mixture by using vapor deposition to dehydrogenate the amorphous silicon thin film; performing an annealing treatment to the amorphous silicon thin film being dehydrogenated to diffuse dopant ions so as to form a polysilicon layer; and patterning the polysilicon layer..
Wuhan China Star Optoelectronics Technology Co., Ltd.

Method of manufacturing a semiconductor device integrating a vertical conduction transistor, and semiconductor device

A method of manufacturing a vertical conduction semiconductor device comprising the steps of: forming a recess in a monocrystalline silicon substrate; forming a silicon oxide seed layer in the recess; carrying out an epitaxial growth of silicon on the substrate, simultaneously growing a polycrystalline silicon region in the seed layer and a monocrystalline silicon region in surface regions of the substrate, which surround the seed layer; and implanting dopant species in the polycrystalline silicon region to form a conductive path in order to render the second conduction terminal electrically accessible from a front side of the vertical conduction semiconductor device.. .
Stmicroelectronics S.r.l.

Method for forming a semiconductor structure

A method for forming a semiconductor structure includes the following steps. First, a preliminary structure is provided.
United Microelectronics Corp.

Forming nanosheet transistors with differing characteristics

A method of forming a transistor in an integrated circuit device can include forming a first and second nanosheet structure with alternating sheets of silicon and silicon germanium. A first and second transistor structure are constructed using the first and second nanosheet structures as first and second channels.
International Business Machines Corporation

Saddle channel thin film transistor for driving micro leds or oleds in ultrahigh resolution displays

A thin film transistor (tft) to control a light emitting diode (led) or an organic light emitting diode (oled) includes a channel region configured as a saddle channel extending between the drain region and the source region of the tft. The saddle channel is formed by deposition of channel material on a fin structure, and the contour of the saddle channel is defined by the contour of the fin structure.
Intel Corporation

Semiconductor apparatus, system, and producing semiconductor apparatus

A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.. .
Canon Kabushiki Kaisha

Method for manufacturing tft substrate

A method for manufacturing a tft substrate is disclosed. The tft substrate includes a drive tft region and a display tft region.
Shenzhen China Star Optoelectronics Technology Co. , Ltd.

Display device

By applying an ac pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an ac pulse.
Semiconductor Energy Laboratory Co., Ltd.

Structure and fully depleted silicon on insulator structure for threshold voltage modification

A method for fabricating a fully depleted silicon on insulator (fdsoi) device is described. A charge trapping layer in a buried oxide layer is provided on a semiconductor substrate.
Globalfoundries Inc.

Semiconductor device and manufacturing the same

In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area.
Taiwan Semiconductor Manufacturing Co., Ltd.

Manufacturing semiconductor device and semiconductor device

After a dummy control gate electrode and a memory gate electrode are formed and an interlayer insulating film is formed so as to cover the gate electrodes, the interlayer insulating film is polished to expose the dummy control gate electrode and the memory gate electrode. Thereafter, the dummy control gate electrode is removed by etching, and then a control gate electrode is formed in a trench which is a region from which the dummy control gate electrode has been removed.
Renesas Electronics Corporation

Embedded silicon substrate fan-out type packaging structure and manufacturing method therefor

An embedded silicon substrate fan-out type packaging structure comprises: a silicon substrate having a first surface and a second surface opposite thereto, at least one groove extending towards the second surface being formed on the first surface; at least one chip placed in the groove, a pad surface of the chip being opposite to a bottom of the groove; a second dielectric layer formed on the chip and the first surface; at least one layer of metal wiring connected to pads of the chip, formed on the second dielectric layer; under bump metal layers for planting solder balls, formed on an outermost layer of metal wiring; and solder balls or bumps planted on the under bump metal layers, wherein at least one solder ball or bump and at least one under bump metal layer corresponding thereto are on the first surface of the silicon substrate.. .
Huatian Technology (kunshan) Electronics Co., Ltd.

Thin low defect relaxed silicon germanium layers on bulk silicon substrates

A strain relaxed silicon germanium layer that has a low defect density is formed on a surface of a silicon substrate without causing wafer bowing. The strain relaxed silicon germanium layer is formed using multiple epitaxial growing, bonding and transferring steps.
International Business Machines Corporation

Contact using multilayer liner

An opening is formed within a substrate made of a silicon material, and a cleaning process is performed; after which, the bottom and walls of the opening are contaminated with oxygen and fluorine particles. A lower blocking layer is formed within the opening, and the lower blocking layer contacts the bottom and walls of the opening.
Globalfoundries Inc.

Scalable embedded silicon bridge via pillars in lithographically defined vias, and methods of making same

An embedded silicon bridge system including tall interconnect via pillars is part of a system in package device. The tall via pillars may span a z-height distance to a subsequent bond pad from a bond pad that is part of an organic substrate that houses the embedded silicon bridge..
Intel Corporation

Ir assisted fan-out wafer level packaging using silicon handler

A support structure for use in fan-out wafer level packaging is provided that includes, a silicon handler wafer having a first surface and a second surface opposite the first surface, a release layer is located above the first surface of the silicon handler wafer, and a layer selected from the group consisting of an adhesive layer and a redistribution layer is located on a surface of the release layer. After building-up a fan-out wafer level package on the support structure, infrared radiation is employed to remove (via laser ablation) the release layer, and thus remove the silicon handler wafer from the fan-out wafer level package..
International Business Machines Corporation

Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield

The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as nh3 or n2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as nh3 or n2 to thereby imprint an oxygen precipitate profile can degrade the goi yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film.
Sunedison Semiconductor Limited (uen201334164h)

Method and substrate processing

A substrate processing method according to exemplary embodiments includes bringing removal solution obtained by mixing a nitric acid, a strong acid stronger than the nitric acid, and water into contact with a substrate in which a boron monofilm is formed on a film including a silicon-based film so as to remove the boron monofilm from the substrate.. .
Tokyo Electron Limited

Semiconductor device and manufacturing the same

In a split-gate-type monos memory, increase in a defective rate due to variation in a gate length of a memory gate electrode is prevented, and reliability of a semiconductor device is improved. A first dry etching having a high anisotropic property but a low selection ratio relative to silicon oxide is performed to a silicon film, and then, a second dry etching having a low anisotropic property but a high selection ratio relative to silicon oxide is performed thereto, so that a control gate electrode composed of the silicon film is formed, and then, a sidewall-shaped memory gate electrode is formed on a side surface of the control gate electrode.
Renesas Electronics Corporation

Method and system for vertical power devices

A method of forming a semiconductor device includes providing an engineered substrate. The engineered substrate includes a polycrystalline ceramic core, a barrier layer encapsulating the polycrystalline ceramic core, a bonding layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the bonding layer.
Qromis, Inc.

Method of forming a structure on a substrate

Providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.. .

Method of forming a structure on a substrate

Subsequently introducing the silicon halide in the reactor at a temperature causing decomposition of the silicon halide precursor to provide a substantially pure amorphous silicon layer on top of the primary layer.. .

Cable

A cable includes at least one core that has a conductor and an insulating coating layer that covers the conductor; and a sheath layer that covers the at least one core. The sheath layer includes an inner sheath layer and an outer sheath layer that covers the inner sheath layer.
Sumitomo Electric Industries, Ltd.

Apparatus for controlling brightness of mobile phone screen

Embodiments of the present invention provide an apparatus for controlling brightness of a mobile phone screen, which includes: a mobile phone screen light source, a silicon-controlled dimmer, a rectifier processing module, a first constant current controller processing module, a second constant current controller processing module, an electrolytic capacitor processing module, and a third constant current controller processing module, since the first constant current controller processing module can be used to provide an anode forward current necessary to sustain conduction of the silicon-controlled dimmer, the problem of screen flickering in a switch changeover state can be avoided.. .
Beijing Taitan Technology Co. Ltd.

Monolithic micro led display

A micro display, which includes leds and tfts of a tft electronic control circuit for controlling the leds, is produced monolithically on a silicon, silicon carbide, or sapphire wafer. The display includes red, green, and blue micro leds, and electronic control circuits include tfts with indium gallium zinc oxide (igzo) channels or indium phosphide (inp) channels.
Intel Corporation

Barcode-reading system

A barcode reader is disclosed. The barcode reader may include a semiconductor package and an optic system.
The Code Corporation

Fingerprint identification device, mobile device using the same and manufacturing fingerprint identification device

A fingerprint identification device and a method for manufacturing the fingerprint identification device are provided. The fingerprint identification device includes a solder ball array, a re-distribution layer, an image sensing integrated circuit (ic), a light emitting circuit, a photic layer and a molding material.
Eosmem Corporation

Fingerprint emulator

An access key for a device having a fingerprint activated lock includes an electrically conductive member having surface features formed on a surface thereof that can be recognized by the fingerprint activated lock as a unique fingerprint. A second electrically conductive member is electrically coupled to the first electrically conductive member.
Griffin Technology, Llc

Projected capacitive touch panel with silver-inclusive transparent conducting layer(s), and/or making the same

Certain example embodiments relate to capacitive touch panels. First and second glass substrates are substantially parallel and spaced apart from one another.
Guardian Glass, Llc

Light transmitting and receiving device and light detection and ranging system

A light transmitting and receiving device and a light detection and ranging system are related. The device includes a light transmitting module and a light receiving module.
Hon Hai Precision Industry Co., Ltd.

Mother-of-pearl substrate coated with a yellow layer

Method for coloured coating on a watchmaking or jewellery external part component, comprising at least one visible surface prepared in advance on a substrate, this method comprising a step of vacuum-deposition of at least one main layer of titanium and silicon nitride (ti, sik)nx or of titanium and silicon nitride doped with oxygen (ti, sik)nxoy.. .
The Swatch Group Research And Development Ltd

Fixing apparatus

A fixing apparatus includes a tubular film, a heater including a first surface and a second surface opposite to the first surface, the first surface being to contact an inner surface of the film, a supporting member including a supporting surface for supporting the heater from a side of the second surface, and a heat conductive member arranged between the second surface of the heater and the supporting surface of the supporting member, wherein a toner image is fixed on a recording material with heat of the heater via the film, and wherein the heat conductive member is attached to at least one of the second surface of the heater and the supporting surface of the supporting member via an adhesive member including silicone-based pressure-sensitive adhesive or silicone-based adhesive.. .
Canon Kabushiki Kaisha

Toner for electrostatic use

A toner for electrostatic use includes a binder resin including an amorphous polyester resin having a urethane bond and a crystalline polyester resin, a metal ion forming a chemical bond with the binder resin, at least one colorant forming a coordinate bond with the metal ion and being supported on the binder resin through the metal ion, and at least three elements selected from an iron element, a silicon element, a sulfur element, and a fluorine element while including at least one of an iron element, a silicon element, and a sulfur element, wherein an amount of the iron element is about 1000 ppm to about 10000 ppm as an element concentration, an amount of the silicon element is about 1000 ppm to about 5000 ppm as an element concentration, and an amount of the sulfur element is about 500 ppm to about 3000 ppm as an element concentration.. .
Samsung Electronics Co., Ltd.

Toner for developing electrostatic images

Provided is a toner for developing electrostatic images that has an excellent balance between low-temperature fixability and heat-resistant shelf stability as well as good conveyance amount stability and printing durability, and causes less occurrence of fog in a high temperature and high humidity environment. The toner for developing electrostatic images of the present invention includes colored resin particles containing a binder resin and a colorant, and an external additive, wherein silica fine particles a having a sodium to silicon ratio of 0.1 to 1.8% by mass, are contained as the external additive..
Zeon Corporation

Method of pattern formation and producing polysilane resin precursor

A method of pattern formation. The method is capable of inhibiting a post-development residue from remaining on a support equipped with an electrode, and a method of producing a polysilane-polysiloxane resin precursor that is suitable for use in the method of pattern formation.
Tokyo Ohka Kogyo Co., Ltd.

Radiation sensitive composition

And is bonded to a silicon atom through a si—c bond or a si—o bond, and r9 is a hydrolyzable group.. .

Mask blank, phase-shift mask and manufacturing semiconductor device

Wherein rm is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and cn is the content of nitrogen in said one layer.. .

Photomask blank, and preparation method thereof

A photomask blank including a transparent substrate, and at least one film (a) containing chromium and nitrogen and free of silicon and at least one film (b) containing silicon and oxygen, and free of a transition metal that are contacted to each other in the blank, when an intension of secondary ions is measured along a thickness direction of the films by a time-of-flight secondary ion mass spectrometry (tof-sims), an intension of secondary ions derived from cr2o5 is lower than an intension of secondary ions derived from sin, at a position located at the interface or its vicinity of the film (a) and film (b) and having a maximum intensity of secondary ions derived from sicro5.. .
Shin-etsu Chemical Co., Ltd.

Photomask blank, and preparation method thereof

A photomask blank including a transparent substrate, and at least one film (a) containing chromium and free of silicon and at least one film (b) containing silicon, and oxygen or oxygen and nitrogen, and free of a transition metal that are contacted to each other in the blank, when an intension of secondary ions is measured along a thickness direction of the films by a time-of-flight secondary ion mass spectrometry (tof-sims), an intension of secondary ions derived from cr2o5 is lower than an intension of secondary ions derived from cr, at a position located at the interface or its vicinity of the film (a) and film (b) and having a maximum intensity of secondary ions derived from sicro5.. .
Shin-etsu Chemical Co., Ltd.

Morphable identity, networkable photonic quantum logic gate system & method

Optical information processing systems and methods including quantum computing logic gates, quantum computing memory configurations, and quantum computing entanglement discernment methods. Realization manners include linear optical components as well as rectangular waveguides lithographed on silicon chips..

Liquid crystal display panel

An lcd panel is provided, which includes a substrate, a polarizing sheet disposed on a surface of the substrate, and a device disposed on another surface of the substrate. The device forms a device area.
Wuhan China Star Optoelectronics Technology Co., Ltd.

Microfabricated optical apparatus with flexible electrical connector

A microfabricated optical apparatus that includes a light source driven by a waveform, wherein the waveform is delivered to the light source by at least one through silicon via. The microfabricated optical apparatus may also include a light-sensitive receiver which generates an electrical signal in response to an optical signal.
Innovative Micro Technology

Waveguide formation using cmos fabrication techniques

Conventional approaches to integrating waveguides within standard electronic processes typically involve using a dielectric layer, such as polysilicon, single-crystalline silicon, or silicon nitride, within the in-foundry process or depositing and patterning a dielectric layer in the backend as a post-foundry process. In the present approach, the back-end of the silicon handle is etched away after in-foundry processing to expose voids or trenches defined using standard in-foundry processing (e.g., complementary metal-oxide-semiconductor (cmos) processing).
Massachusetts Institute Of Technology

Mehtod and system for coupling optical signals into silicon optoelectronic chips

A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a cmos photonic chip comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chip and one or more optical couplers may receive the optical signals in the front surface of the chip.
Luxtera, Inc.

Fully integrated avalanche photodiode receiver

Various embodiments of a fully integrated avalanche photodiode receiver and manufacturing method thereof are described herein. A photonic device includes a silicon-on-insulator (soi) substrate with a buried oxide (box) layer therein, an avalanche photodiode integrated with the soi substrate, a capacitor integrated with the soi substrate, a resistor integrated with the soi substrate, and silicon passive waveguides as well as bonding pads integrated with the soi substrate..
Sifotonics Technologies Co., Ltd.

Material in-situ detection device and method under multi-load and multi-physical field coupled service conditions

Provided are a material in-situ test device and method under multi-load and multi-physical field coupled service conditions. The device is composed of a precise six-degree-of-freedom composite load applying module, a precise torsion module, a precise indentation module, a clamp module and a control module which work together to complete a composite-load and multi-physical field coupled experiment, and is integrated with a digital speckle strain measurement and infrared thermal imaging module and a microscope observation module, so as to carry out in-situ observation and quantitative characterization on material deformation behaviours and damage mechanism phenomena in a composite-load and multi-physical field loading process.
Jilin University

High sensitivity silicon piezoresistor force sensor

Embodiments relate to systems and methods for sensing a force using a sense die. A sense die may comprise a chip comprising a slab; an actuation element configured to contact the slab at or near the center of the slab, and configured to apply a force to the slab; and one or more sense elements supported by the slab, wherein the ratio of the width of the slab to the distance between the one or more sense elements is at least 2/1.
Honeywell International Inc.

Modular interlocking display systems

Modular interlocking display systems including frames constructed from a plurality of modular frame elements. The modular frame elements each include a perimeter side equipped with a locking channel and interlocking mechanisms that allow frames to be joined together without the need of tools.

Ironing pad and related ironing

An ironing pad includes at least a top layer and a bottom layer. The top layer is constructed of fabric and has a first coefficient of friction.

Method of evaluating manufacturing process of silicon material and manufacturing silicon material

The method is a method of evaluating a manufacturing process of a silicon material, wherein the manufacturing process includes a process that uses a member containing a carbon-containing sintered body, and the method of evaluating the manufacturing process of a silicon material includes performing dlts measurement on a silicon material manufactured in the manufacturing process, and estimating a heavy metal contamination source of a silicon material manufactured in the manufacturing process with an indicator in the form of presence/absence of detection of a peak of a carbon-related level and presence/absence of detection of a peak of a heavy metal-related level in a dlts spectrum obtained by the dlts measurement.. .
Sumco Corporation

Methods for forming single crystal silicon ingots with improved resistivity control

Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity..
Sunedison Semiconductor Limited (uen201334164h)

Component, in particular structural component, for a motor vehicle, as well as a producing a component

A component, in particular a structural component for a motor vehicle, is disclosed. The component has a basic body formed from a hot-formable steel, which is provided with a coating at least in one partial region.
Daimier Ag

Method for producing substrate, substrate, and liquid ejection head

A method for producing a substrate that includes a protective layer made from a metal oxide protecting silicon against corrosion and an organic resin layer on a substrate surface of a silicon substrate includes the following steps in this order: step a of forming the protective layer on the substrate surface; step b of removing the protective layer from the substrate surface in a region z1 that is a part of the region in which the protective layer has been formed; and step c of providing an organic resin layer on the substrate surface in a region z2 including the region z1.. .
Canon Kabushiki Kaisha

Superplastic medium manganese steel and produing the same

A superplastic medium manganese steel according to the present invention preferably has a composition containing 4 to 8 wt. % of manganese (mn) and 3 wt.
Industry-academic Cooperation Foundation, Yonsei University

Method for producing turbine rotor and producing turbine

A method for producing a turbine rotor includes forming a rotor base material having a maximum outer diameter of 1000 mm or less from low-alloy steel including carbon, silicon, manganese, nickel, chromium, molybdenum, and vanadium; heating the rotor base material, by a quenching process, to a temperature range of 940° c. To 960° c.; performing oil quenching on the rotor base material, after the quenching process, in a temperature range of 250° c.
Japan Casting & Forging Corporation

Ferritic stainless steel and manufacturing the same

Provided is a ferritic stainless steel and method of manufacturing the same. The ferritic stainless steel comprises, by weight percent, 0.02% or less of carbon (c), 0.02% or less of nitrogen (n), 1.0% or less of silicon (si), 1.20% or less of manganese (mn), 0.05% or less of phosphorus (p), 10.0 to 25.0% of chromium (cr), 0.5 to 2.0% of molybdenum (mo), 0.01 to 0.30% of titanium (ti), 0.30 to 0.70% of niobium (nb), and the remainder consisting of iron (fe) and other unavoidable impurities.
Posco

Solvent compositions for use as heptane replacements

The present disclosure provides, in part, a solvent composition for use as a heptane replacement. The solvent composition may include a first methylated organosilicon compound, an acetate ester, and either para-chlorobenzotrifluoride (pcbtf) or a second methylated organosilicon compound or both..
Tbf Environmental Technology Inc.

Renewable biomass derived carbon material for metallurgical processes and making the same

A method for the production of a carbon material entirely from raw biomass feedstock for use in connection with a metallurgical production and refining process such as the production of steel, aluminum or silicon. The carbon material has a carbon content of greater than 50% by volume of non-volatile, high purity fixed elemental carbon and includes physical properties such as coking strength, conductivity, density, porosity, surface area and particle size which may be individually modified to meet the requirements of a specific metallurgical application..
Carbon Research & Development, Co.

Silicone composition and cured product

A silicone composition is provided comprising (a) an alkenyl-containing organopolysiloxanc having a viscosity of 1.0-100 pa·s at 25° c., (b) an organopolysiloxane of formula (1), (c) an organohydrogenpolysiloxane of formula (2), (d) an organohydrogenpolysiloxane of formula (3), (e) a filler, (f) a platinum group metal catalyst, and (g) a reaction inhibitor. The composition has a low viscosity and good moldability prior to curing and cures into a dilatant product that exhibits a low storage elastic modulus at a low strain rate and a high storage elastic modulus at a high strain rate..
Soken, Inc.

Thermosetting silicone resin composition containing boron nitride, dispersant for silicone resin compositions, and inorganic filler

The present invention provides: 1) a silicone resin composition, containing: a thermosetting silicone resin; an inorganic substance; and a dispersant, in which: the dispersant includes a copolymer of a (meth)acrylic acid ester having at least one polydimethylsiloxane structure and a (meth)acrylic acid alkyl ester; and the inorganic substance is boron nitride or a mixture of the boron nitride and an inorganic substance except the boron nitride; 2) a dispersant for a boron nitride-containing silicone resin composition, comprising the above-mentioned copolymer; and 3) an inorganic filler, comprising boron nitride or a mixture of the boron nitride and an inorganic substance except the boron nitride. The silicone resin composition of the present invention has a low viscosity and has stability against a mechanochemical treatment..
Showa Denko K. K.

Polyurethane foam premixes containing halogenated olefin blowing agents and foams made from same

Disclosed are polyol premix compositions, and foams formed therefrom, which comprise a combination of a hydrohaloolefin blowing agent, a polyol, a silicone surfactant, and a catalyst system that includes a bismuth-based metal catalyst. Such catalysts may be used alone or in combination with an amine catalyst and/or other non-amine catalysts..

Resin composition, prepreg, resin sheet, metal foil-clad laminate, and printed circuit board

It is intended to provide a resin composition that suppresses the thermal expansion of a printed circuit board more than ever and also prevents the bleedout of substances from the printed circuit board, while maintaining a high glass transition temperature. The resin composition of the present invention contains an alkenyl-substituted nadimide, a maleimide compound, and an epoxy-modified cyclic silicone compound..
Mitsubishi Gas Chemical Company, Inc.

Resin composition, prepreg or resin sheet comprising the resin composition, and laminate and printed circuit board comprising them

The resin composition of the present invention comprises an alkenyl-substituted nadimide (a), a maleimide compound (b), and an amino-modified silicone (c).. .
Mitsubishi Gas Chemical Company, Inc.

Silicone elastomers and their preparation and use

The present invention relates to an elastomeric composition comprising a silicone rubber, glycerol, at least one crosslinking agent, and optionally one or more excipients, wherein said glycerol is present as discrete droplets in the silicone rubber, obtainable through the application of high shear forces.. .
Danmarks Tekniske Universitet

Composite of silicon oxide nanoparticles and silsesquioxane polymer, producing same, and composite material produced using composite thereof

[means for solution] provided are a method of producing a composite of silicon oxide nanoparticles and a silsesquioxane polymer, the method comprising reacting a silsesquioxane polymer having a silanol group at a terminal or a silane monomer with silicon oxide nanoparticles having a hydroxyl group or an alkoxy group on the surface in a mixed solvent of an aqueous solvent and an organic solvent in the presence of a phase transfer catalyst, and a composite produced by the method.. .

Synthesis of polycarbonate siloxane diols

The present invention provides silicon-based polycarbonates, processes for their preparation and their use in the synthesis of copolymers, in particular segmented copolymers such as polyurethanes for biomedical applications.. .
Aortech Internation Plc

Silicone surfactant for use in polyurethane foams prepared with polyether carbonate polylos

Surfactants for polyurethane foam forming compositions, polyurethane foam forming compositions, and polyurethane foams formed by such compositions. The polyurethane foam forming compositions employ (i) a silicone based surfactant comprising polyether groups pendant from the silicone backbone, and (ii) a polyol component comprising a polyether carbonate polyol, where the surfactant comprises low molecular weight pendant group having a high ethylene oxide content..
Momentive Performance Materials Inc.

Solvent compositions for use as hexane replacements

The present disclosure provides, in part, a solvent composition for use as a hexane replacement. The solvent composition may include para-chlorobenzotrifluoride (pcbtf), a methylated organosilicon compound, and an acetate ester..
Tbf Environmental Technology Inc.

Silicon material and producing the same

Provided is a method for producing a silicon material, the method including: a molten metal preparing step of preparing ca-x at % si alloy (42≤x≤75) molten metal; a solidifying step of cooling the molten metal by a rapid cooling device to solidify the ca-x at % si alloy; a synthesizing step of reacting the solidified ca-x at % si alloy with acid to obtain a layered silicon compound; and a heating step of heating the layered silicon compound at not less than 300° c.. .
Kabushiki Kaisha Toyota Jidoshokki

Manufacturing silicon carbide and silicon carbide manufactured using the same

A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.. .
Korea Institute Of Energy Research

Method of producing heterophase graphite

A method of producing a heterophase graphite, including the steps of (a) providing a silicon carbide single-crystal substrate;(b) placing the silicon carbide single-crystal substrate in a graphite crucible and then in a reactor to undergo an air extraction process; and (c) performing a desilicification reaction on the silicon carbide single-crystal substrate in an inert gas atmosphere to obtain 2h graphite and 3r graphite, so as to directly produce lumpy (sheetlike, crushed, particulate, and powderlike) 2h graphite and 3r graphite, and preclude secondary contamination of raw materials which might otherwise occur because of a crushing step, an oxidation step, and an acid rinsing step.. .
National Chung Shan Institute Of Science And Technology

Micro-electro-mechanical system (mems) structures and design structures

Micro-electro-mechanical system (mems) structures, methods of manufacture and design structures are disclosed. The method includes forming a micro-electro-mechanical system (mems) beam structure by venting both tungsten material and silicon material above and below the mems beam to form an upper cavity above the mems beam and a lower cavity structure below the mems beam..
International Business Machines Corporation

Method and preparing release paper rolls of adhesive insulation material and release paper rolls of adhesive insulation material which are stackable and non-adherent to each other

A method and apparatus is disclosed for preparing release paper rolls of adhesive duct insulation material which are stackable and non-adherent to each other. The adhesive insulation material contemplated is the type used for sealing crevices and spaces in air cooling and leaking systems generally referred to as “heating, ventilation and cooling” systems, or “hvac”.
Capital Hardware Supply, Inc.

Method for bonding heterogeneous substrates

Adhering a second substrate raw material to the uv radiation treated surface of the first substrate, the second substrate raw material being fluorinated hydrocarbon rubber or silicone rubber; and press molding the first substrate and the second substrate raw material so as to bond the first substrate and a second substrate of the second substrate raw material together.. .

Laminate, silicone resin layer-attached support substrate, silicone resin layer-attached resin substrate, and producing electronic device

The present invention provides a laminate including a support substrate, a silicone resin layer and a substrate arranged in this order, in which the silicone resin layer contains at least one metal element selected from the group consisting of 3d transition metals, 4d transition metals, lanthanide metals, and bismuth and in which end portion degradation of a silicone resin layer is suppressed.. .
Asahi Glass Company, Limited

Imprinting apparatus

An imprinting apparatus includes a silicon master having a plurality of nanofeatures defined therein. An anti-stick layer coats the silicon master, the anti-stick layer including a molecule having a cyclosiloxane with at least one silane functional group.
Illumina Cambridge Limited

Abrasive articles including aggregates of silicon carbide in a vitrified bond

The present disclosure relates to abrasive articles that include abrasive aggregates of silicon carbide with a vitrified bond, and methods of making and using such abrasive articles and abrasive aggregates. In particular, the abrasive aggregates can possess a combination of beneficial properties and comprise a vitreous binder composition having a specific composition, sintering temperature, glass transition temperature, or a combination thereof..
Saint-gobain Abrasifs

Amorphous ductile braze alloy compositions, and related methods and articles

A nickel-based braze alloy composition is described, including nickel, about 1 weight % to about 5 weight % boron (b); and about 1 weight % to about 20 weight % germanium (ge). The composition is free of any silicon.
General Electric Company

Novel methods of metals processing

Novel methods for the production of iron, silicon, and magnesium metal from extraterrestrial and terrestrial resources are described. The methods employ processing steps including metal oxide reduction using carbon monoxide, carbon, hydrogen, and methane.
Pioneer Astronautics

Laminate, silicone resin layer-attached support substrate, silicone resin layer-attached resin substrate, and producing electronic device

The present invention provides a laminate superior in foaming resistance, including a support substrate, a silicone resin layer and a substrate arranged in this order, in which the silicone resin layer contains at least one metal element selected from the group consisting of zirconium, aluminum, and tin.. .
Asahi Glass Company, Limited

Modification of surface properties of microfluidic devices

Compositions, devices, and methods are disclosed for the modification of polymer surfaces with coatings having a dispersion of silicone polymer and hydrophobic silica. The surface coatings provide the polymer surface with high hydrophobicity, as well as increased resistance to biofouling with proteinaceous material.
Bio-rad Laboratories, Inc.

Cation exchange resin, and cation exchange membrane and fuel cell electrolyte membrane using same

A cation exchange resin is used, the cation exchange resin comprising: a divalent hydrophobic unit; and a divalent hydrophilic unit having divalent hydrophilic groups which are repeated via carbon-carbon bond, the divalent hydrophilic groups being composed of one aromatic ring, or being composed of a plurality of aromatic rings which are bonded to each other via a divalent hydrocarbon group, a divalent silicon-containing group, a divalent nitrogen-containing group, a divalent phosphorus-containing group, a divalent oxygen-containing group, a divalent sulfur-containing group, or carbon-carbon bond, at least one of the aromatic rings having a cation exchange group; wherein the hydrophobic unit and the hydrophilic unit are bonded to each other via carbon-carbon bond.. .

Circumferential coating material and circumferential coating honeycomb structure

A circumferential coating material which is coated on a circumferential surface of a honeycomb structure monolithically formed by extrusion, to form a circumferential coating layer, the circumferential coating material containing fused silica in a range of 20 to 75 mass %, containing a color developing agent in a range of 5 to 50 mass %, containing colloidal silica in a range of 5 to 30 mass %, and further containing a silicon based water repellent agent in a range of 1 to 10 mass % to a total mass of the fused silica, the color developing agent, and the colloidal silica.. .
Ngk Insulators, Ltd.

Method for producing transition-metal-containing zeolite, transition metal zeolite produced by the method, and exhaust gas purification catalyst including the zeolite

Provided is a method for producing a transition-metal-containing silicoaluminophosphate that is highly suitable as a catalyst or an adsorbent and has excellent high-temperature hydrothermal durability and excellent water resistance, that is, excellent durability against water submersion (water-submersion durability), in a simple and efficient manner. A method for producing a transition-metal-containing zeolite, the method comprising a steam treatment step in which a transition-metal-containing zeolite is stirred at 710° c.
Mitsubishi Plastics, Inc.

Hybrid sapo-34/zsm-5 catalyst, its preparation and its use

Prepare a hybrid sapo-34/zsm-5 catalyst via sequential steps as follows: a) form a mixture consisting essentially of zsm-5 as a sole source of silicon atoms, aluminum isopropoxide and a solution of orthophosphoric acid; b) combine the mixture with an aqueous solution of tetraethylammonium hydroxide to form a reaction mixture; and c) subject the reaction mixture to hydrothermal conditions for a period of time sufficient to convert the reaction mixture to a hybrid sapo-34/zsm-5 catalyst. Use the hybrid catalyst in converting an oxygenate (methanol and/or dimethyl ether) to an olefin..
Dow Global Technologies Llc

Delivery of drug nanoparticles and methods of use thereof

Disclosed are compositions and methods useful for enhancing the skin penetration of drug nanoparticles. The compositions can be hydrophobic and include a hydrophobic carrier, a volatile silicone fluid, and drug nanoparticles.
Dfb Soria, Llc

Cosmetic compositions which are homogenous in the bulk and capable of forming a multilayer structure after application to a keratinous material

An inorganic pigment, skin active agent, skin adjuvant, or uv filter; wherein the weight ratio of the silicone- and/or hydrocarbon-containing film forming agent(s) in component a to silicone compound(s) in component b of about 1:1.5 to about 1:100.. .

Cosmetic compositions which are homogenous in the bulk and capable of forming a multilayer structure after application to a keratinous material

Wherein the weight ratio of the silicone- and/or hydrocarbon-containing film forming agent(s) in component a to silicone compound(s) in component b of about 1:1.5 to about 1:100.. .

Apparatus and treating male impotence

The present invention strategically utilizes the sturdiness of thin wires enwrapped inside a thick layer of soft material such as silicone rubber which is smoother and softer than human tissue. Therefore, the device doesn't cause any damage or side effect and feels comfortable to user.

Hairpin

A hairpin comprising a metal body and a silicone coating covering the metal body, the silicone coating begin configured for heat resistance.. .

Antimicrobial, insecticidal and acaricidal system

The present invention relates to an antimicrobial, insecticidal and acaricidal system comprising support particles functionalized with at least one antimicrobial compound of natural origin. The particles are preferably selected from the group consisting of silica-based inorganic materials, such as mesoporous silicon oxide particles or amorphous silicon oxide particles, for example; and also cellulose particles, such as microcrystalline cellulose particles, for example, whereas the antimicrobial compound is preferably selected from the group consisting of carvacrol, cinnamaldehyde, perillaldehyde, eugenol, thymol, vanillin, gallic acid and ferulic acid..
Universidad Politecnica De Valencia

3m Innovative Properties Company

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Resin composition, prepreg or resin sheet comprising the resin composition, and laminate and printed circuit board comprising them

The resin composition of the present invention comprises a prepolymer (p) and a thermosetting component, the prepolymer (p) being obtained by polymerizing an alkenyl-substituted nadimide (a), a maleimide compound (b), and an amino-modified silicone (c).. .
Mitsubishi Gas Chemical Company, Inc.

Active interposer for localized programmable integrated circuit reconfiguration

A system may include a host processor, an interposer having memory elements, a coprocessor mounted on the interposer for accelerating tasks received from the host processor, and an auxiliary chip. The coprocessor, interposer, and auxiliary chip may be part of an integrated circuit package.
Intel Corporation

Resonator, oscillator, electronic apparatus, and vehicle

A resonator includes a surface silicon layer as a base material, a first silicon oxide layer disposed on a first surface of the surface silicon layer, and a second silicon oxide layer disposed on the opposite side to the surface silicon layer of the first silicon oxide layer, wherein when the thickness of the surface silicon layer is represented by tsi, the thickness of the first silicon oxide layer is represented by ta, and the thickness of the second silicon oxide layer is represented by tb, the following relationships are satisfied: 0.138×tsi<ta<0.268×tsi and 0.189×tsi<tb<0.527×tsi.. .
Seiko Epson Corporation

Garnet-type oxide sintered body and producing same

A garnet-type oxide sintered body according to the present invention includes crystal grains composed of a garnet-type oxide containing li, la and zr and a grain boundary composition containing boron and silicon and filling gaps between the crystal grains. The oxide sintered body has the characteristics of high density and high ion conductivity.
Central Glass Company, Limited

Negative electrode active material for secondary battery and preparing method thereof

Provided are a negative electrode active material for a secondary battery, which suppresses a dispersal phenomenon of a negative electrode active material during charging/discharging by controlling a lattice mismatch ratio of an amorphous matrix layer to a silicon layer in a silicon-based negative electrode active material.. .
Iljin Electric Co., Ltd.

Negative electrode active material for non-aqueous electrolyte secondary battery, non-aqueous electrolyte secondary battery, and producing negative electrode material for non-aqueous electrolyte secondary battery

A negative electrode active material for a non-aqueous electrolyte secondary battery, includes: negative electrode active material particles that contain a silicon compound (siox: 0.5≤x≤1.6) containing a li compound, wherein the silicon compound is at least partially coated with a carbon coating, and at least a part of a surface of the silicon compound, a surface of the carbon coating, or both of them are coated with a composite layer that contains a composite composed of amorphous metal oxide and metal hydroxide. This provides a negative electrode active material for a non-aqueous electrolyte secondary battery that is highly stable in aqueous slurry, having a high capacity, favorable cycle performance and first efficiency..
Shin-etsu Chemical Co., Ltd.

Method for preparing negative electrode of lithium ion battery and lithium ion battery

The present application provides a method for preparing negative electrode of lithium ion battery. The negative electrode prepared according to the present application has large specific surface area, good chemical stability and controllable volume change.
Optimum Battery Co., Ltd.

Negative electrode active material, raw material for a negative electrode active material, negative electrode, lithium ion secondary battery, producing a negative electrode active material, and producing a lithium ion secondary ba...

A negative electrode active material including: a particle of negative electrode active material containing silicon-based material of siox (0.5≤x≤1.6); wherein the intensity a of a peak in a si-region given in the chemical shift region of from −50 to −95 ppm and the intensity b of a peak in a sio2-region given in the chemical shift region of from −96 to −150 ppm in a 29si-mas-nmr spectrum of the silicon-based material satisfy a relationship that a/b≥0.8. This provides a negative electrode active material which can increase a battery capacity, and can improve cycle characteristics and initial charge/discharge characteristics when used as a negative electrode active material for a lithium ion secondary battery..
Shin-etsu Chemical Co., Ltd.

Elastic wave device, high-frequency front end circuit, and communication apparatus

An elastic wave device includes a piezoelectric substrate, an idt electrode including a first electrode layer located on the piezoelectric substrate and including one of mo and w as a main component and a second electrode layer laminated on the first electrode layer and including cu as a main component, and a dielectric film located on the piezoelectric substrate and covering the idt electrode. The piezoelectric substrate is made of lithium niobate.
Murata Manufacturing Co., Ltd.

Resin molding, surface mounted light emitting manufacturing the same

The surface mounted light emitting apparatus comprises the light emitting device 10 based on gan which emits blue light, the first resin molding 40 which integrally molds the first lead 20 whereon the light emitting device 10 is mounted and the second lead 30 which is electrically connected to the light emitting device 10, and the second resin molding 50 which contains yag fluorescent material and covers the light emitting device 10. The first resin molding 40 has the recess 40c comprising the bottom surface 40a and the side surface 40b formed therein, and the second resin molding 50 is placed in the recess 40c.

Solar cells having differentiated p-type and n-type architectures

Methods of fabricating solar cell emitter regions with differentiated p-type and n-type region architectures, and the resulting solar cells, are described herein. In an example, a solar cell includes an n-type semiconductor substrate having a light-receiving surface and a back surface.
Sunpower Corporation

Vertical double diffusion metal-oxide-semiconductor power device with high voltage start-up unit

A vertical double diffusion metal-oxide-semiconductor power device with high voltage start-up unit includes a vertical double diffusion metal-oxide-semiconductor power transistor and the high voltage start-up unit. The vertical double diffusion metal-oxide-semiconductor power transistor includes a first metal layer, a substrate layer with first conductivity type, an epitaxy layer with first conductivity type, a second metal layer, and a plurality of polysilicon layers.
Leadtrend Technology Corp.

High voltage mosfet devices and methods of making the devices

A sic mosfet device having low specific on resistance is described. The device has n+, p-well and jfet regions extended in one direction (y-direction) and p+ and source contacts extended in an orthogonal direction (x-direction).
Monolith Semiconductor Inc.

Gallium nitride (gan) transistor structures on a substrate

Techniques are disclosed for gallium nitride (gan) oxide isolation and formation of gan transistor structures on a substrate. In some cases, the gan transistor structures can be used for system-on-chip integration of high-voltage gan front-end radio frequency (rf) switches on a bulk silicon substrate.
Intel Corporation

Conformal transfer doping fin-like field effect transistor

Doping techniques for fin-like field effect transistors (finfets) are disclosed herein. An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature.
Taiwan Semiconductor Manufacturing Co., Ltd.

Method of fabricating a semiconductor device

A method for fabricating a semiconductor device includes forming a gate electrode structure over a first region of a semiconductor substrate, and selectively forming an oxide layer overlying the gate electrode structure by reacting a halide compound with oxygen to increase a height of the gate electrode structure. The halide compound may be silicon tetrachloride, and the oxide layer may be silicon dioxide.
Taiwan Semiconductor Manufacturing Co., Ltd.

Integration process of finfet spacer formation

A novel plasma process is introduced as an improvement over conventional plasma processes during formation of spacers for finfet devices. Under this novel plasma process, an oxide layer is grown over sidewall materials and low energy plasma gas is used for the over-etching of the corner areas of the sidewalls.
Shanghai Huali Microelectronics Corporation

Preparation platform-shaped active region based p-i-n diode string in reconfigurable loop antenna

A preparation method for a platform-shaped active region based p-i-n diode string in a reconfigurable loop antenna includes: (a) selecting an soi substrate; (b) etching the soi substrate to form a platform-shaped active region; (c) depositing a p-type si material and an n-type si material around the platform-shaped active region by an in-situ doping process to form a p region and an n region respectively; (d) depositing a polysilicon material around the platform-shaped active region; (e) forming leads on a surface of the polysilicon material and forming pads by photolithography, to form the p-i-n diode string. Therefore, a high-performance platform-shaped active region based p-i-n diode string suitable for a solid-state plasma antenna can be provided by an in-situ doping process..
Xi'an Creation Keji Co., Ltd.

Fin-type semiconductor device

Fin-type semiconductor device is provided. The semiconductor device includes: a semiconductor substrate and an insulating layer on sidewalls of the plurality of fins.
Semiconductor Manufacturing International (shanghai) Corporation

Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer

A body structure and a drift zone are formed in a semiconductor layer, wherein the body structure and the drift zone form a first pn junction. A silicon nitride layer is formed on the semiconductor layer.
Infineon Technologies Ag

Silicon carbide semiconductor device and manufacturing the silicon carbide semiconductor device

A vertical mosfet of a trench gate structure includes an n−-type drift layer and a p+-type base layer formed by epitaxial growth. The vertical mosfet includes a trench that penetrates the n−-type drift layer and the p+-type base layer.
National Institute Of Advanced Industrial Science And Technology

Multijunction photovoltaic device

There is provided a multi-junction photovoltaic device (100) comprising a first sub-cell (110) disposed over a second sub-cell (120), the first sub-cell comprising a photoactive region comprising a layer of perovskite material and the second sub-cell comprising a silicon heterojunction (shj).. .
Oxford Photovoltaics Limited

Light emitting diodes (leds) with integrated cmos circuits

Disclosed is a device which includes first and second major substrate surfaces. The first substrate surface includes an led with first and second terminals while the second substrate surface includes cmos circuit components.
Globalfoundries Inc.

Germanium-silicon light sensing apparatus

A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.. .
Artilux Corporation

Transistor array panel and display device including the same

A transistor array panel according to an exemplary embodiment includes: a substrate; a first buffer layer positioned on the substrate; and a first transistor and a second transistor positioned on the substrate and separated from each other, wherein the first transistor includes a polycrystalline semiconductor positioned on the substrate, and a first gate electrode overlapping the polycrystalline semiconductor, the second transistor includes an oxide semiconductor positioned on the first buffer layer, and a second gate electrode overlapping the oxide semiconductor, the first buffer layer covers the first gate electrode, and the first buffer layer includes a silicon oxide.. .
Samsung Display Co., Ltd.

Semiconductor device

A semiconductor device (1) is manufactured which includes a sic epitaxial layer (28), a plurality of transistor cells (18) that are formed in the sic epitaxial layer (28) and that are subjected to on/off control by a predetermined control voltage, a gate electrode (19) that faces a channel region (32) of the transistor cells (18) in which a channel is formed when the semiconductor device (1) is in an on state, a gate metal (44) that is exposed at the topmost surface for electrical connection with the outside and that is electrically connected to the gate electrode (19) while being physically separated from the gate electrode (19), and a built-in resistor (21) that is made of polysilicon and that is disposed below the gate metal (44) so as to electrically connect the gate metal (44) and the gate electron (19) together.. .
Rohm Co., Ltd.

Source and drain formation technique for fin-like field effect transistor

Source and drain formation techniques are disclosed herein for fin-like field effect transistors (finfets). An exemplary method for forming epitaxial source/drain features for a finfet includes epitaxially growing a semiconductor material on a plurality of fins using a silicon-containing precursor and a chlorine-containing precursor.
Taiwan Semiconductor Manufacturing Co., Ltd.

Method, apparatus, and system having super steep retrograde well with silicon and silicon germanium fins

At least one method, apparatus and system disclosed involves forming a finfet device having silicon and silicon germanium fins. The method includes: forming an n-doped and a p-doped region in a semiconductor wafer; forming a layer of silicon above both the those regions; removing a portion of the silicon layer above the p-doped region to create a first recess; forming a layer of silicon germanium in the first recess; etching away at least a portion of the silicon layer and the underlying p-doped region; etching away at least a portion of the silicon germanium layer and the underlying n-doped region; forming fins from the unetched silicon and silicon germanium layers; and forming a shallow trench isolation dielectric in the etched away portion of the silicon layer and the underlying p-doped region and in the etched away portion of the silicon germanium layer and the underlying n-doped region..
Globalfoundries Inc.

Vertical double diffusion metal-oxide-semiconductor power device

A vertical double diffusion metal-oxide-semiconductor power device with thermal sensitivity unit includes a vertical double diffusion metal-oxide-semiconductor power transistor and at least one thermal sensitivity unit. The vertical double diffusion metal-oxide-semiconductor power transistor includes a first metal layer, a substrate layer, an epitaxy layer, a second metal layer, and a plurality of first polysilicon layers, wherein each first polysilicon layer of the plurality of first polysilicon layers corresponds to a first oxide layer, a first doping well and a second doping well with second conductivity type, a first doped region and a second doped region with first conductivity type, and a second oxide layer.
Leadtrend Technology Corp.

Methods for fabricating metal gate structures

One aspect of the present disclosure is a method of fabricating metal gate by forming a silicon-nitride layer (sin) over a dummy gate at a second metal gate type transistor region (e.g. Nmos) avoid dummy gate loss during a cmp process for a pmos gate.
Shanghai Huali Microelectronics Corporation

Dual epitaxial growth process for semiconductor device

A method of forming a semiconductor device includes forming first and second fin structures on a substrate and a patterned polysilicon structure on first portions of the first and second fin structures. The method further includes depositing an insulating layer on second portions of the first and second fin structures and on the patterned polysilicon structure, which may be followed by selectively removing the insulating layer from the second portions and patterning a first hard mask layer on the second portion of the second fin structure.
Taiwan Semiconductor Manufacturing Co., Ltd.

Semiconductor device and manufacturing the same, and stacked semiconductor device

A semiconductor device includes: a semiconductor substrate; a through silicon via which penetrates the semiconductor substrate; an insulating film which is provided between a side surface of the through silicon via and the semiconductor substrate; and a mos transistor which is provided on the semiconductor substrate, wherein: the semiconductor substrate has a first crystal axis and a second crystal axis, and a propagation amount of stress occurring from the through silicon via is larger in a direction of the first crystal axis than in a direction of the second crystal axis; and the insulating film has a thickness in a direction of a diameter of the through silicon via being a thickness along the direction of the first crystal axis larger than a thickness along the direction of the second crystal axis.. .
Fujitsu Limited

High resistivity silicon-on-insulator substrate comprising an isolation region

A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm and an isolation region that impedes the transfer of charge carriers along the surface of the handle substrate and reduces parasitic coupling between rf devices..
Sunedison Semiconductor Limited (uen201334164h)

Semiconductor device

An object is to provide a semiconductor device with reduced standby power. A transistor including an oxide semiconductor as an active layer is used as a switching element, and supply of a power supply voltage to a circuit in an integrated circuit is controlled by the switching element.
Semiconductor Energy Laboratory Co., Ltd.

Method for forming trench liner passivation

In a method for fabricating a semiconductor device, a trench is etched in a semiconductor substrate having a top surface, and a lining oxide layer is formed conformal to the trench. A negatively-charged liner covering the lining oxide layer and conformal to the trench is formed.
Taiwan Semiconductor Manufacturing Co., Ltd.

Trench isolated ic with transistors having locos gate dielectric

An integrated circuit (ic) including at least one transistor having a metal-oxide-semiconductor (mos) gate includes a substrate having a semiconductor surface. The transistor includes at least one trench isolation region in the semiconductor surface.
Texas Instruments Incorporated

Thermoplastic temporary adhesive for silicon handler with infra-red laser wafer de-bonding

A bonding material including a phenoxy resin thermoplastic component, and a carbon black filler component. The carbon black filler component is present in an amount greater than 1 wt.
International Business Machines Corporation

Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme

A method of making a semiconductor device includes disposing a first hard mask (hm), amorphous silicon, and second hm on a substrate; disposing oxide and neutral layers on the second hm; removing a portion of the oxide and neutral layers to expose a portion of the second hm; forming a guiding pattern by selectively backfilling with a polymer; forming a self-assembled block copolymer (bcp) on the guiding pattern; removing a portion of the bcp to form an etch template; transferring the pattern from said template into the substrate and forming uniform silicon fin arrays with two types of hm stacks with different materials and heights; gap-filling with oxide followed by planarization; selectively removing and replacing the taller hm stack with a third hm material; planarizing the surface and exposing both hm stacks; and selectively removing the shorter hm stack and the silicon fins underneath.. .
Globalfoundries, Inc.

Thin film metal silicides and methods for formation

The disclosed subject matter provides thin films including a metal silicide and methods for forming such films. The disclosed subject matter can provide techniques for tailoring the electronic structure of metal thin films to produce desirable properties.
The Trustees Of The University Of Pennsylvania

Production semiconductor device electrode

The present invention provides a method for producing a semiconductor device electrode, the method including the steps of: forming a first thin-film including a first metal on a substrate containing si; forming a second thin-film including a compound of a second metal on the first thin-film; and performing a heat treatment to form an electrode including a silicide of the first metal, and is characterized in that hafnium (hf) is applied as the second metal. Hfn, hfw, hfb or the like is suitable as the compound of the second metal.
Tokyo Institute Of Technology

Semiconductor structure having low-k spacer and manufacturing the same

The present disclosure provides a semiconductor structure, including a semiconductor fin, a metal gate over the semiconductor fin, and a sidewall spacer composed of low-k dielectric surrounding opposing sidewalls of the metal gate. A portion of the sidewall spacer comprises a tapered profile with a greater separation of the opposing sidewalls toward a top portion and a narrower separation of the opposing sidewalls toward a bottom portion of the sidewall spacer.
Taiwan Semiconductor Manufacturing Company Ltd.

Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure

A semiconductor device includes a silicon carbide semiconductor body and a metal contact structure. Interface particles including a silicide kernel and a carbon cover on a surface of the silicide kernel are formed directly between the silicon carbide semiconductor body and the metal contact structure.
Infineon Technologies Ag

Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

A method of manufacturing a silicon carbide semiconductor device includes, in order: polishing a silicon carbide semiconductor base body from a second main surface side thus forming unevenness on a second main surface; forming a thin metal film made of metal capable of forming a metal carbide on the second main surface of the silicon carbide semiconductor base body; irradiating a laser beam which falls within a visible region or within an infrared region to the thin metal film so as to heat the thin metal film thus forming a metal carbide on a boundary face between the silicon carbide semiconductor base body and the thin metal film; etching a metal containing byproduct layer possibly formed on a surface side of the metal carbide by a non-oxidizing chemical solution thus exposing a surface of the metal carbide; and forming a cathode electrode on the metal carbide.. .
Shindengen Electric Manufacturing Co., Ltd.

Hardmask composition and methods thereof

Provided is a material composition and method for that includes forming a silicon-based resin over a substrate. In various embodiments, the silicon-based resin includes a nitrobenzyl functional group.
Taiwan Semiconductor Manufacturing Co., Ltd.

Patterning process with silicon mask layer

A lithography method is provided in accordance with some embodiments. The lithography method includes forming an under layer on a substrate; forming a silicon-containing middle layer on the under layer, wherein the silicon-containing middle layer has a thermal base generator (tbg) composite; forming a photosensitive layer on the silicon-containing middle layer; performing an exposing process to the photosensitive layer; and developing the photosensitive layer, thereby forming a patterned photosensitive layer..
Taiwan Semiconductor Manufacturing Co., Ltd.

Integrated source/drain engineering

Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise group iv source/drain growth in semiconductor devices.
Applied Materials, Inc.

Manufacturing gallium nitride substrate

A method of manufacturing a gallium nitride substrate, the method including forming a first buffer layer on a silicon substrate such that the first buffer layer has one or more holes therein; forming a second buffer layer on the first buffer layer such that the second buffer layer has one or more holes therein; and forming a gan layer on the second buffer layer, wherein the one or more holes of the first buffer layer are filled by the second buffer layer.. .
Samsung Electronics Co., Ltd.

Fire resistant coaxial cable and manufacturing technique

Fire-resistant coaxial cables are described as well as methods to manufacture them. The dielectric between the coax cable's central conductor and outer coaxial conductor ceramify under high heat, such as those specified by common fire test standards (e.g., 1850° f./1010° c.
American Fire Wire, Inc.

Method to dynamically inject errors in a repairable memory on silicon and a method to validate built-in-self-repair logic

An error injection system of a built-in self-repairable memory system renders the redundant spare columns of the repairable memory accessible to built-in self-test (bist) read and write operations. To this end, the error injection system selectively injects fault data at one or more locations of the main memory during a bist sequence, causing the bist controller to issue a repair instruction that allocates one or more spare columns as replacement memory areas for the presumed faulty main memory locations.
Ampere Computing Llc

Semiconductor device, display panel, and electronic device

Objects are to provide a semiconductor device with a novel structure, to provide a semiconductor device with high resistance to noise, to provide a semiconductor device with a small chip area, and to provide a semiconductor device with low power consumption. In a memory cell included in a frame memory, a transistor containing an oxide semiconductor and a transistor containing silicon are used in combination to retain charge, whereby data is retained.
Semiconductor Energy Laboratory Co., Ltd.

Pin-based noise characterization for silicon compiler

A silicon compiler, such as a memory compiler, provides for pin-based noise characterization in a computationally efficient manner. For a given user-provided option set, a silicon compiler provides a noise database for the set of all available memory instances by performing pin-based noise characterization on only a subset of the set of available memory instances..
Arm Limited

Display panel and thin film transistor array substrate

A liquid crystal display panel and a thin film transistor array substrate are provided. The thin film transistor array substrate includes a pixel area and a fan-out area.
Wuhan China Star Optoelectronics Technology Co., Ltd.

Gsg track-type radio-frequency electrode, silicon-based traveling-wave electrode light modulator, and preparation method

The present invention discloses a gsg track-type radio-frequency electrode, a silicon-based traveling-wave electrode light modulator, and a preparation method, and relates to the field of high-speed electro-optical chips. The gsg track-type radio-frequency electrode includes a gsg-type planar electrode, where a track electrode used for delaying an electric field is periodically added to one side or dual sides of the gsg-type planar electrode, and the track electrode is connected to a ground electrode of the gsg-type planar electrode.
Wuhan Research Institute Of Posts And Telecommunications

Broadband general interference mmi-based polarization beam splitter

A polarization beam splitter includes a silicon waveguide body of a thickness in rectangular shape with a width and a length between a first end plane and a second end plane. Two input ports are formed in the first end plane at two separate locations respectively next to two opposing length edges.
Inphi Corporation

Method of forming an integrated circuit and related integrated circuit

A method of forming an integrated circuit is disclosed. The method includes: (i) forming at least a pair of optoelectronic devices from at least a first wafer material arranged on a semiconductor substrate, the first wafer material different to silicon; (ii) etching the first wafer material to form a first recess to be filled with a second material; (iii) processing the second material to form a waveguide for coupling the pair of optoelectronic devices to define an optical interconnect; and (iv) bonding at least one partially processed cmos device layer having at least one transistor to the second semiconductor substrate to form the integrated circuit, the partially processed cmos device layer arranged adjacent to the optical interconnect.
Nanyang Technological University

Micromachined pressure sensor and making the same

The design and manufacture method of a pressure sensor utilizing thermal field sensing with a thermal isolated membrane of a diaphragm structure is disclosed in the present invention. This device is made with silicon micromachining (a.k.a.
Wisenstech Inc.

Control system and control diameter of single crystal ingot

The embodiments of the present invention provides a diameter controlling system of the single crystal ingot for controlling a diameter deviation of a silicon ingot during the growth of silicon ingot by a czochralski method, it may include a seed chuck for supporting a silicon ingot combined with a seed crystal and grown; a measuring part connected to an upper surface of the seed chuck with a cable and configured to measure a load applied to the seed chuck; a load adjusting part for moving a position of the seed chuck vertically while the seed chuck is connected to the cable to change a load applied to the silicon ingot; and a controlling part for controlling the load applied to the silicon ingot by driving the load adjusting part according to the load value measured from the measuring part. Therefore, shaking of the seed during the growth process of the single crystal ingot is prevented, and thus the diameter deviation of the growing single crystal ingot may be reduced..
Lg Siltron Inc.

Seed crystal holder, crystal growing device, and crystal growing method

A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.. .
Kyocera Corporation

Side stream removal of impurities in electrolysis systems

A side stream subsystem can be used to remove impurity species from the recirculating alkali metal chloride solution in certain electrolysis systems. Silicon and/or aluminum species can be removed via precipitation after introducing an alkali metal hydroxide and magnesium chloride in a side stream line in the subsystem.
Chemetics Inc.

Vapor phase growth method

A vapor phase growth method according to an embodiment is a vapor phase growth method of forming on a single substrate a film having a composition different from a composition of the substrate. The method includes, rotating the single substrate with a center of the single substrate being a rotation center, heating a single substrate to a first temperature, and forming a silicon carbide film having a film thickness of 10 nm or more and 200 nm or less on a surface of the single substrate by supplying a first process gas containing silicon and carbon as a laminar flow in a direction substantially perpendicular to the surface of the single substrate..
Nuflare Technology, Inc.

Wet etch chemistry for selective silicon etch

For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (tmah) and monoethanolamine (mea), one or more polar solvents, and water..
Taiwan Semiconductor Manufacturing Co., Ltd.

Flocked products having a silicone adhesive composition and methods of making and using the same

This invention relates generally to flocked articles and methods for making the same, more particularly to flocked products having a silicone adhesive and methods for making and using the same.. .

Adhesive composition and use thereof in electronics

An adhesive composition includes a polymer, inorganic fillers, and at least one organic solvent. The polymer is at least one preceramic polymer, advantageously based on silicon.
Commissariat A L'energie Atomique Et Aux Energies Alternatives

Adhesive sheet

A pressure sensitive adhesive sheet is provided, containing a substrate or a release material having thereon a resin layer including a resin part (x) containing as a main component a hydrocarbon resin having a carbon atom on a main chain of a structural unit, and a particle part (y) consisting of fine particles containing silica particles, and at least a surface (α) of the resin layer being opposite to the side of the substrate or being opposite to the side which the release material is provided, having pressure sensitive adhesiveness, the resin layer containing a multilayer structure having a layer (xα) and a layer (y1) in this order in the thickness direction from the side of the surface (α), in a measurement of an intensity ratio (si/c) of a peak intensity (si) derived from a silicon atom and a peak intensity (c) derived from a carbon atom with an energy dispersive x-ray analyzer in the thickness direction from the side of the surface (α) of the resin layer, the intensity ratio in the layer (xα) being less than 0.10, and the intensity ratio in the layer (y1) being 0.10 or more, the surface (α) having concave portions of irregular shapes.. .
Lintec Corporation

High performance silicon based coatings

Provided herein is a silicon based coating formed from a mixture of constituents. The mixture comprises from about 5% (w/w of the mixture) to about 80% (w/w of the mixture) polysilazane, from about 0% (w/w of the mixture) to about 60% (w/w of the mixture) polysiloxane, and from about 8% (w/w of the mixture) to about 80% (w/w of the mixture) polysilane of a formula (r1r2si)n, wherein n is greater than 1, and wherein r1 and r2 are the same or different and are chosen from alkyl, alkenyl, cycloalkyl, alkylamino, aryl, aralkyl, or alkylsilyl.
Burning Bush Group, Llc

Silicone-based composition and article made therefrom

A silicone-based composition includes a silicone polymer and at least one acid neutralizer, wherein the silicone-based composition has a ph of at least about 5 after at least one dose of irradiation, when measured by a ph meter.. .
Saint-gobain Performance Plastics Corporation

Quartz-containing silicone compositions which are low in cyclic compounds

Generation of cyclic siloxanes in silicone compositions containing quartz flour as a filer is reduced by incorporating a basic substance into the composition prior to adding filler.. .
Wacker Chemie Ag

High-k ltcc dielectric compositions and devices

Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing forms a dielectric material comprising a barium-titanium-tungsten-silicon oxide.. .
Ferro Corporation

Asphalt composition and production and/or regeneration of at least one asphalt surface layer

The present invention relates to an asphalt composition comprising asphalt or an asphalt mixture and to a silicon carbide-containing binder that can be heated by means of microwaves. The silicon carbide is present in the binder in particle form, the equivalent diameter of silicon carbide particles contained in the binder is less than 60 μm.

Method of adhering silicone rubber film and glass sheet together

A method of adhering a silicone rubber film and a glass sheet together contains steps of: (a). Pouring liquid silicone rubber into a mold in a vacuum condition so as to form a silicone rubber film with 0.2 mm thickness after the liquid silicone rubber solidifies; (b).

Laminated body

A laminated body includes a substrate provided with a first surface; a rugged layer including fluorine; and an antifouling layer. The rugged layer has an average surface roughness of 0.05-50 nm.
Asahi Glass Company, Limited

Epsilon iron oxide and producing the same, magnetic coating material and magnetic recording medium

An epsilon iron oxide has an average particle size of 10 to 18 nm, a part of the iron element being substituted with a substitutional element and has a coercive force of 14 koe or less, wherein a coefficient of variation of the particle size is 40% or less. A method for producing the same, a magnetic coating material and a magnetic recording medium using the epsilon iron oxide, includes depositing a metal compound of a substitutional element on iron oxide hydroxide to thereby obtain iron oxide hydroxide on which the metal compound is deposited; coating the iron oxide hydroxide on which the metal compound is deposited, with silicon oxide to thereby obtain iron oxide hydroxide coated with the silicon oxide; and applying heat treatment to the silicon oxide-coated iron oxide hydroxide in an oxidizing atmosphere, wherein a part of an iron element is substituted with the substitutional element..
Dowa Electronics Materials Co., Ltd.

Method for producing casi2-containing composition and silicon material

A cooling step of cooling the molten metal to obtain a casi2-containing composition containing a reduced amount of crystalline silicon.. .

Group iii-n mems structures on a group iv substrate

Techniques are disclosed for forming group iii material-nitride (iii-n) microelectromechanical systems (mems) structures on a group iv substrate, such as a silicon, silicon germanium, or germanium substrate. In some cases, the techniques include forming a iii-n layer on the substrate and optionally on shallow trench isolation (sti) material, and then releasing the iii-n layer by etching to form a free portion of the iii-n layer suspended over the substrate.
Intel Corporation

Method for manufacturing liquid discharge apparatus and liquid discharge apparatus

There is provided a method for manufacturing a liquid discharge apparatus including: forming a photoresist film made of a photoresist on a silicon substrate; exposing the photoresist film; forming a nozzle in the photoresist film by exposing the photoresist film and then developing the photoresist film; forming a channel hole in communication with the nozzle by carrying out an etching process from a surface of the substrate on the opposite side from the photoresist film after forming the nozzle; and joining a channel member to the surface of the substrate on the opposite side from the photoresist film, the channel member including a pressure chamber in communication with the channel hole and a piezoelectric element formed as a film to correspond to the pressure chamber.. .
Brother Kogyo Kabushiki Kaisha

Sliding part with wear resistant coating and forming wear resistant coating

A sliding part with a wear resistant coating includes a sliding part, and a wear resistant coating provided on a sliding surface of the sliding part, and made of a cobalt alloy containing chromium and silicon. In the wear resistant coating, oxide particles are dispersed which include an oxide containing chromium and silicon, and have a particle size of 100 μm or less when a cross section of the wear resistant coating is observed using an optical microscope with a magnification of 100 times..
Ihi Corporation

Method for producing contact lenses

The invention provides a method producing contact lenses, comprising the step of: separating the mold into the male and female mold halves, with the silicone hydrogel contact lens adhered on one of the male and female mold halves; bring a shaped ultrasonic horn in direct contact with at least one area of a non-optical surface of the female mold half or the male mold half having the molded silicone hydrogel contact lens attached thereon; and applying a ultrasonic vibrational energy to the at least one area of the non-optical surface of the female mold half or the male mold half having the molded silicone hydrogel contact lens attached thereon so as to separate the molded silicone hydrogel contact lens from the mold half attached thereon.. .
Novartis Ag

High strength weld metal for demanding structural applications

Weld metals and methods for welding ferritic steels are provided. The weld metals have high strength and high ductile tearing resistance and are suitable for use in strain based pipelines.

Aluminum alloy for die casting and die casting mold manufactured using the same

The embodiments of the present disclosure provide an aluminum alloy for die casting comprising a composition ratio having an aluminum (al) content which occupies almost the composition ratio of the aluminum alloy; a magnesium (mg) content of 2.5˜3.0%; a silicon (si) content of 9.6˜0.5%; a zinc (zn) content of 0.5% or less; and a copper (cu) content of 0.15% or less.. .

Classifying polysilicon

A method for mechanically classifying polycrystalline silicon chunks or granules with a vibratory screening machine, involves setting silicon chunks or granules present on one or more screens each comprising a screen lining in vibration such that the silicon chunks or silicon granules perform a movement which causes the silicon chunks or silicon granules to be separated into various size classes, wherein a screening index is greater than or equal to 0.6 and less than or equal to 9.0.. .
Wacker Chemie Ag

Silicone wound dressing and methods for manufacturing and using thereof

Provided are a silicone wound dressing, a method of manufacturing thereof and a method of using thereof. The silicone wound dressing has a silicone dressing base material and an amorphous carbon coating formed on the silicone dressing base material.
Bio Interface Engineering, L.l.c.

Hair conditioning composition

The present invention relates to an aqueous composition for treating hair comprising one or more cationic polymers having certain cationic change density and one or more aminated silicones. The novel composition provides hair long lasting conditioning, especially improves combability and suppleness of hair which is held up to 20 hair washes..
Kao Germany Gmbh

Method of conditioning the hair

Described herein is a method of conditioning the hair, the method including providing a hair care composition, adding a hydrofluoropropene to the hair care composition at a concentrated hair care composition to hydrofluoropropene weight ratio of from about 85:15 to about 98:2 to create a pressurized hair care composition, dispensing the pressurized hair care composition from an aerosol dispenser as a foam, applying the foam to the hair, and rinsing the foam from the hair. The hair care composition includes from about 0.5% to about 18% silicone, less than 8% high melting point fatty compound, and less than 5% cationic surfactant.
The Procter & Gamble Company

Particles with cross-linked coatings for cosmetic applications

The present invention relates to a cosmetic composition comprising core particles in a cosmetically or pharmaceutically acceptable carrier, wherein the core particles comprise a heat-curable coating which is the reaction product of a vinyl-functional silicone polymer, a hydride-functional crosslinker, and a metal catalyst.. .
Elc Management Llc

Bag on valve or dip-tube container for a pressurized personal care product

Described herein is an aerosol dispenser including a pressurized personal care product in a bag on valve or dip-tube container. The pressurized personal care product includes from about 2% to about 10% propellant, from about 0.5% to about 5% perfume, from about 1% to about 14% nonionic emulsifier, less than 5% cationic surfactant, from about 3% to about 17% silicone, and less than 7.5% high melting point fatty compound.
The Procter & Gamble Company

Method of conditioning the hair

Described herein is a method of conditioning the hair, the method including providing a hair care composition, adding a propellant to the hair care composition at a concentrated hair care composition to propellant weight ratio of from about 98:2 to about 85:15 to create a pressurized hair care composition, dispensing the pressurized hair care composition from an aerosol dispenser as a foam, applying the foam to the hair, and rinsing the foam from the hair. The hair care composition includes from about 3% to about 18% silicone, less than 8% high melting point fatty compound, and less than 5% cationic surfactant.
The Procter & Gamble Company

Slip-resistant shoelace and method

Slip-resistant laces for articles of dress, such as various types of footwear and clothing, and methods of making the same are provided. The slip-resistant laces include a first engagement portion and a second engagement portion.

Shin-etsu Chemical Co., Ltd.

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Hitachi, Ltd.

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Samsung Sdi Co., Ltd.

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Heater tube for molten metal immersion

A heater tube for molten metal immersion 1 has a cylindrical heater housing part 4 equipped with a closed end 2 and an open end 3, wherein the heater housing part 4 comprises silicon nitride, a compound comprising yttrium, and a compound comprising magnesium. The heater housing part 4 has a surface roughness ra of an outer circumferential surface of the heater housing part 4 is between 0.5 μm and 10 μm, inclusive..
Mitsui Mining & Smelting Co., Ltd.

Sound absorbing material and manufacturing method thereof and speaker using sound absorbing material

The present disclosure provides a sound absorbing material, a manufacturing method thereof and a speaker using the sound absorbing material. The speaker comprises a shell with a receiving space, a sound production unit disposed in the shell, and a rear cavity encircled by the sound production unit and the shell.
Aac Technologies Pte. Ltd.

Data flow configuration in hybrid system of silicon and micro-electro-mechanical-switch (mems) elements

Certain embodiments of the present disclosure provide a method for communicating data flows. The method generally includes receiving control flow information corresponding to a data flow for communication from a first device to a second device, and determining one or more characteristics of the data flow based on the control flow information.
International Business Machines Corporation

Temperature insensitive delay line interferometer

A silicon photonics based temperature-insensitive delay line interferometer (dli). The dli includes a first arm comprising a first length of a first material characterized by a first group index corresponding to a first phase delay to transfer a first light wave with a first peak frequency and a second arm comprising a second length of a second material characterized by a second group index corresponding to a second phase to transfer a second light wave with a second peak frequency with a time-delay difference relative to the first light wave.
Inphi Corporation

Compact 3d receiver architecture using silicon germanium thru silicon via technology

A wide bandwidth radio system designed to adapt to various global radio standards and, more particularly, to a system and method incorporate a compact receiver array design to support the demand for increased mobile broadband services using a through-silicon vias to interconnect front-end analog functions in sige bicmos to backend circuitry in cmos.. .
Gm Global Technology Operations Llc

Fully depleted silicon on insulator power amplifier

The present disclosure generally relates to semiconductor structures and, more particularly, to a fully depleted silicon on insulator power amplifier with unique biases and voltage standing wave ratio protection and methods of manufacture. The structure includes a pseudo-differential common source amplifier; first stage cascode devices connected to the pseudo-differential common source amplifier and protecting the pseudo-differential common source amplifier from an over stress; second stage cascode devices connected to the first stage cascode devices and providing differential outputs; and at least one loop receiving the differential outputs from the second stage cascode devices and feeding back the differential outputs to the second stage cascode devices..
Globalfoundries Inc.

Protective structure of stator and fan using the same

The present invention relates to a protective structure of a stator and a fan using the same. The protective structure of a stator comprises plural silicon steel sheets, at least one first filler, and a cover body.
Asia Vital Components Co., Ltd.

High holding voltage clamp

An electrostatic discharge (esd) protection device with a high holding voltage is disclosed including at least an esd clamp coupled to a holding voltage tuning circuit. The esd clamp may be coupled to the holding voltage tuning circuit through a connection circuit such as a diode.
Sofics Bvba

Microfabricated optical apparatus with grounded metal layer

A microfabricated optical apparatus that includes a light source driven by a waveform, wherein the waveform is delivered to the light source by at least one through silicon via. The microfabricated optical apparatus may also include a light-sensitive receiver which generates an electrical signal in response to an optical signal.
Innovative Micro Technology

Porous silicon-silicon oxide-carbon composite, and preparing the same

The present invention relates to a porous silicon-silicon oxide-carbon composite comprising a silicon oxide-carbon structure and silicon particles, wherein the silicon oxide-carbon structure comprises a plurality of micropores, and the silicon particles are uniformly distributed in the silicon oxide-carbon structure. The porous silicon-silicon oxide-carbon composite of the present invention shows decreased volume expansion due to the intercalation of lithium ions and improved electric conductivity, and has a porous structure.
Korea Advanced Institute Of Science And Technology

High capacity monolithic composite si/carbon fiber electrode architectures synthesized from low cost materials and process technologies

A composite si-carbon fiber comprising a carbon matrix material with 1-90 wt % silicon embedded therein. The composite carbon fibers are incorporated into electrodes for batteries.
Ut-battelle, Llc

Method of producing a housing cover, producing an optoelectronic component, and optoelectronic component

A method of producing a housing cover includes providing a cover blank having a mounting surface formed on an underside; connecting the underside of the cover blank to a silicon slice; creating at least one opening in the silicon slice to expose at least part of the mounting surface; arranging a base metallization on the exposed part of the mounting surface; and removing the silicon slice.. .
Osram Opto Semiconductors Gmbh

Method of fabricating thin film photovoltaic devices

Thin film silicon photovoltaic cell arrangements that include a heavily doped p-type polycrystalline silicon layer spaced-apart from the substrate and bottom electrode in order to reduce grain defects by initiating crystallization at a location far from the substrate. This is accomplished by forming a device structure incorporating such amorphous silicon films on a substrate and annealing at elevated temperature to crystallize the a-si films such that the crystallization of the a-si starts within the spaced-apart heavily doped p-type layer and proceeds through the intrinsic silicon layer..

High performance solar cells, arrays and manufacturing processes therefor

High performance single crystal silicon cells and arrays thereof are manufactured using a rapid process flow. Tunneling junctions formed in the process provide performance benefits, such as higher efficiency and a lower power temperature coefficient.
Mpower Technology, Inc.

Photoelectric conversion device, manufacturing the same, and camera

A photoelectric conversion device has a silicon substrate which includes a first portion configured to perform photoelectric conversion, and a second portion which is arranged farther apart from a light receiving surface of the silicon substrate than the first portion and contains carbon. A first peak concentration as a carbon peak concentration in the second portion is not less than 1×1018 [atoms/cm3] and not more than 1×1020 [atoms/cm3], and a second peak concentration as an oxygen peak concentration in the second portion is not less than 1/1000 and not more than 1/10 of the first peak concentration..
Canon Kabushiki Kaisha

Method of forming conformal epitaxial semiconductor cladding material over a fin field effect transistor (finfet) device

The present disclosure generally relates to devices having conformal semiconductor cladding materials, and methods of forming the same. The cladding material is a silicon germanium epitaxial material.
Applied Materials, Inc.

Contact structure and extension formation for iii-v nfet

Finfet devices including iii-v fin structures and silicon-based source/drain regions are formed on a semiconductor substrate. Silicon is diffused into the iii-v fin structures to form n-type junctions.
International Business Machines Corporation

Cascode configured semiconductor component

In accordance with an embodiment, a cascode connected semiconductor component and a method for manufacturing the cascode connected semiconductor component are provided. The cascode connected semiconductor component has a pair of silicon based transistors, each having a body region, a gate region over the body region, a source region and a drain.
Semiconductor Components Industries, Llc

Silicon carbide vertical mosfet with polycrystalline silicon channel layer

A semiconductor device may include a semiconductor body of silicon carbide (sic) and a field effect transistor. The field effect transistor has the semiconductor body that includes a drift region.
Infineon Technologies Ag

Semiconductor device and manufacturing method

A semiconductor device includes: a first conductivity type semiconductor substrate made of silicon carbide; a second conductivity type body region in a device region of the semiconductor substrate; a first conductivity type source region formed in the body region; and a gate electrode formed on the body region through gate insulating films. The semiconductor device further includes, in a termination region of the semiconductor substrate, second conductivity type resurf layers, and an edge termination region formed in the resurf layers.
Renesas Electronics Corporation

Semiconductor device and manufacturing the same

A semiconductor device is provided. The semiconductor device includes a n− type layer disposed at a first surface of a n+ type silicon carbide substrate and a trench disposed at the n− type layer.
Kia Motors Corporation

Semiconductor device and method manufacturing the same

A semiconductor device may include an n− type layer disposed at a first surface of an n+ type silicon carbide substrate; a trench disposed at the n− type layer; a p type region, an n+ type region, and a p+ type region disposed at an upper portion in the n− type layer; a gate insulating layer disposed on the n− type layer, the n+ type region, and the p type region; a gate electrode disposed on the gate insulating layer; an insulating layer disposed on the gate electrode; a source electrode disposed on the insulating layer and in the trench; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate, wherein the source electrode includes an ohmic junction region and a schottky junction region.. .
Kia Motors Corporation

Semiconductor device and method manufacturing the same

A semiconductor device may include an n− type layer disposed at a first surface of an n+ type silicon carbide substrate; a p− type region, a p type region, an n+ type region, and a p+ type region disposed at an upper portion in the n− type layer; a gate electrode and a source electrode disposed on the n− type layer and insulated from each other; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate, wherein the source electrode is in contact with the p− type region, the n+ type region, and the p+ type region, and the source electrode may include an ohmic junction region disposed at a contact portion of the source electrode and the n+ type region and the contact portion of the source region and the p+ type region and a schottky junction region disposed at the contact portion of the source electrode and the p− type region.. .
Kia Motors Corporation

Semiconductor device and method manufacturing the same

A semiconductor device may include an n− type layer sequentially disposed at a first surface of an n+ type silicon carbide substrate; a p type region disposed in the n− type layer; an auxiliary n+ type region disposed on the p type region or in the p type region; an n+ type region disposed in the p type region; an auxiliary electrode disposed on the auxiliary n+ type region and the p type region; a gate electrode separated from the auxiliary electrode and disposed on the n− type layer; a source electrode separated from the auxiliary electrode and the gate electrode; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate, wherein the auxiliary n+ type region and the n+ type region are separated from each other, and the source electrode is in contact with the n+ type region.. .
Kia Motors Corporation

Process to etch semiconductor materials

The present disclosure describes a method which can selectively etch silicon from silicon/silicon-germanium stacks or silicon-germanium from silicon-germanium/germanium stacks to form germanium-rich channel nanowires. For example, a method can include a multilayer stack formed with alternating layers of a silicon-rich material and a germanium-rich material.
Taiwan Semiconductor Manufacturing Co., Ltd.

Method for crystallizing metal oxide semiconductor layer, semiconductor structure, active array substrate, and indium gallium zinc oxide crystal

The present invention provides a method for crystallizing a metal oxide semiconductor layer, a semiconductor structure, a method for manufacturing a semiconductor structure, an active array substrate, and an indium gallium zinc oxide crystal. The crystallization method includes the following steps: forming an amorphous metal oxide semiconductor layer on a substrate; forming an oxide layer on the amorphous metal oxide semiconductor layer; forming an amorphous silicon layer on the oxide layer; and irradiating the amorphous silicon layer by using a laser, so as to heat the amorphous silicon layer, where the heated amorphous silicon layer heats the amorphous metal oxide semiconductor layer, so that the amorphous metal oxide semiconductor layer is converted into a crystallized metal oxide semiconductor layer..
Au Optronics Corporation

Thin film transistor array substrate and liquid crystal panel

The present disclosure discloses a thin film transistor array substrate and a liquid crystal panel. The thin film transistor array substrate comprises a substrate, a silicon thin film transistor formed on the substrate, an oxide semiconductor transistor, and a capacitor.
Wuhan China Star Optoelectronics Technology Co., Ltd.

Semiconductor device and manufacturing the same

A method of manufacturing a semiconductor device, includes forming a fin structure on a main surface of semiconductor substrate, the fin structure including a silicon material; forming a first gate electrode over the fin structure via a first insulating film, and forming a second gate electrode over the fin structure via a second insulating film having a charge accumulating part, such that the second gate electrode is disposed along a sidewall of the first gate electrode in a plan view; forming source and drain regions over a surface of the fin structure at both sides of a structure defined by the first and second gate electrodes; performing a first heat treatment to the semiconductor substrate to keep the semiconductor substrate at a first predetermined temperature; and forming a first metal film on the fin structure by sputtering in condition that the semiconductor substrate is at the first predetermined temperature.. .
Renesas Electronics Corporation

Method of providing layout design of sram cell

A method of providing a layout design of an sram cell includes: providing a substrate layout comprising a first oxide diffusion area, a second oxide diffusion area, a first polysilicon layout, and a second polysilicon layout, wherein the first polysilicon layout extends across the first oxide diffusion area and the second oxide diffusion area, and the second polysilicon layout extends across the first oxide diffusion area and the second oxide diffusion area; forming a first pull-up transistor on the first oxide diffusion area and the first polysilicon layout; forming a first pull-down transistor on the second oxide diffusion area and the first polysilicon layout; forming a second pull-up transistor on the first oxide diffusion area and the second polysilicon layout; and forming a second pull-down transistor on the second oxide diffusion area and second first polysilicon layout.. .
Taiwan Semiconductor Manufacturing Company Ltd.

Semiconductor device and electronic apparatus

A semiconductor device, including a first semiconductor chip including a first substrate having a semiconductor larger in bandgap than silicon, the first semiconductor chip being formed with a first fet including a first