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Silicon-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Built-in self test for loopback on communication system on chip
September 13, 2018 - N°20180262268

In an example, the present invention includes an integrated system-on-chip device. The device is configured on a single silicon substrate member.
Dense-comb redundant ring laser array
September 13, 2018 - N°20180261983

The disclosed embodiments relate to the design of a hybrid laser comprising a shared ring mirror coupled to a pair of buses by a 3 db coupler (also referred to as a “symmetric splitter”), which is described in more detail below. Each bus is also coupled to an array of ring filters, wherein each ring filter couples ...
Multi-wavelength semiconductor lasers
September 13, 2018 - N°20180261978

Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (soi) substrate and a quantum dot (qd) layer above the soi substrate.
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Organosilicon-containing electrolyte compositions having enhanced electrochemical and thermal stability
September 13, 2018 - N°20180261879

Described are electrolyte compositions and electrochemical devices containing the electrolyte compositions. The compositions include an organosilicon compound, an imide salt and optionally lipf6.
Lithium ion battery anode containing silicon nanowires grown in situ in pores of graphene foam ...
September 13, 2018 - N°20180261847

A process for producing an anode layer, comprising: (a) dispersing catalyst metal-coated si particles, graphene sheets, and an optional blowing agent in a liquid medium to form a graphene/si dispersion; (b) dispensing and depositing the dispersion onto a supporting substrate to form a wet layer and removing the liquid medium from the wet layer to form a dried layer ...
Negative active material for lithium secondary battery and lithium secondary battery including the same
September 13, 2018 - N°20180261837

A negative active material for a lithium secondary battery and a lithium secondary battery including the same are provided. The negative active material may be a silicon (si)-based alloy negative active material.
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Silicon Patent Applications
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inventor
  • 4172+ full patent PDF documents of Silicon-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
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Stabilized lithium metal impressions coated with alloy-forming elements and method for production thereof
September 13, 2018 - N°20180261834

The invention relates to particulate lithium metal composite materials, stabilized by alloy-forming elements of the third and fourth primary group of the pse and method for production thereof by reaction of lithium metal with film-forming element precursors of the general formulas (i) or (ii): [ar1r2r3r4]lix (i), or r1r2r3a-o-ar4r5r6 (ii), wherein r1...
Negative electrode active material for non-aqueous electrolyte secondary battery, non-aqueous electrolyte secondary battery, method for ...
September 13, 2018 - N°20180261833

A negative electrode active material for non-aqueous electrolyte secondary batteries which has particles of negative electrode active material, the particles of negative electrode active material containing a silicon compound (siox: 0.5≤x≤1.6) that contains a li compound, including a carbon coating on at least a part of a surface of the silicon compound and a salt coating containing one ...
Transistor sidewall formation process
September 13, 2018 - N°20180261686

Processing methods may be performed to form a sidewall spacer on a semiconductor substrate. The methods may include laterally etching a first silicon-containing material relative to a second silicon-containing material.
Semiconductor device and electrical device
September 13, 2018 - N°20180261681

According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the ...
Oled image display apparatus driven by silicon-based cmos and manufacturing method
September 13, 2018 - N°20180261659

An oled image display apparatus driven by a silicon-based cmos and a manufacturing method are disclosed, where the apparatus includes four same microdisplay units formed through exposure by using a same mask, where each microdisplay unit includes: a display controller, a row driver, a column driver, and a rectangular display effective area, where one of vertexes of each rectangular display ...
High efficiency wide spectrum sensor
September 13, 2018 - N°20180261645

A method for fabricating an optical sensor includes: forming, over a substrate, a first material layer comprising a first alloy of germanium and silicon having a first germanium composition; forming, over the first material layer, a graded material layer comprising germanium and silicon; and forming, over the graded material layer, a second material layer comprising a second alloy of germanium ...
Production method of array substrate and array substrate
September 13, 2018 - N°20180261632

This disclosure provides a production method of an array substrate and an array substrate. The production method of this array substrate comprises: forming a polycrystalline silicon layer on a base, wherein the base comprises a first active area, a second active area, and a non-active area; forming an oxide semiconductor layer on the polycrystalline silicon layer; and forming a first ...
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Silicon Patent Applications
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  • 4172+ full patent PDF documents of Silicon-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Semiconductor device having milti-height structure and method of manufacturing the same
September 13, 2018 - N°20180261609

A semiconductor device having semiconductor device having a multi-height structure is provided. The semiconductor device having a multi-height structure includes a silicon substrate.
Thermally enhanced fully molded fan-out module
September 13, 2018 - N°20180261586

A method of making a semiconductor device can include providing a temporary carrier with adhesive. A first semiconductor die and a second semiconductor die can be mounted face up to the temporary carrier such that back surfaces of the first semiconductor die and the second semiconductor die are depressed within the adhesive.
Semiconductor device and method of manufacturing the same
September 13, 2018 - N°20180261562

A semiconductor device includes a substrate; a laminate which is formed on one main surface side of the substrate, and includes an aluminum alloy wiring and an insulating film surrounding the aluminum alloy wiring; and a silicon nitride film covering the laminate, in which the silicon nitride film and the insulating film have an opening portion, through which the silicon ...
Semiconductor module comprising an encapsulating compound that covers at least one semiconductor component
September 13, 2018 - N°20180261518

A semiconductor module (10) contains a ceramic interconnect device (50) having at least one semiconductor component (20). The at least one semiconductor component (20) is covered by an encapsulating compound (30) which contains a cured inorganic cement and has a thermal expansion coefficient in the range of 2 to 10 ppm/k.
Replacement contact process
September 13, 2018 - N°20180261516

Processing methods may be performed to expose a contact region on a semiconductor substrate. The methods may include selectively removing a first region of a silicon material between source/drain regions of a semiconductor substrate to expose a first region of oxide material.
High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by he-n2 co-implantation
September 13, 2018 - N°20180261496

A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm and comprises a region of nitrogen-reacted nanovoids in the front surface region; a silicon dioxide layer on the surface of the semiconductor handle substrate; a ...
Etching method
September 13, 2018 - N°20180261476

An etching method for a target object. The target object includes a main surface, grooves formed in the main surface, and an etching target film covering the main surface and surfaces of the grooves.
Semiconductor device and manufacturing method thereof
September 13, 2018 - N°20180261468

Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion ...
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