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Semiconductors

Semiconductors-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Thermoelectric module
Korea Institute Of Machinery & Materials
July 05, 2018 - N°20180190893

Provided is a thermoelectric module including electrodes and p-type and n-type semiconductors formed on a substrate by a printing method. The thermoelectric module includes upper and lower substrates (110 and 120) formed of ceramic or aluminum and forming upper and lower surfaces of the thermoelectric module; electrodes (130) disposed on surfaces of the upper and lower substrates (110 and 120), the electrodes being formed of ...
Methods for forming semiconductors by diffusion
Asm Ip Holding B.v.
July 05, 2018 - N°20180190793

In some embodiments, a compound semiconductor is formed by diffusion of semiconductor species from a source semiconductor layer into semiconductor material in a substrate. The source semiconductor layer may be an amorphous or polycrystalline structure, and provides a source of semiconductor species for later diffusion into the other semiconductor material.
Semiconductor led display devices
July 05, 2018 - N°20180190712

The subject of this invention is a full-color display device based on iii-nitride semiconductors. The display device includes an array of micro-leds, monolithically integrated on a single chip of the epitaxially grown led heterostructure, and flip-chip bonded to a silicon backplane of active matrix driving circuits, and color conversion layers.
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Lighting device for a vehicle, combining two light sources
Valeo Vision
July 05, 2018 - N°20180187852

The lighting device for a vehicle has two light sources and a wavelength conversion device excited by the combination of the radiations from the two light sources. A first light source is associated with a scanning system projecting, by scanning, a first light radiation onto a first conversion region of the device, while a second light source with semiconductors emits ...
Fet based sensory systems
July 05, 2018 - N°20180186623

This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor, multi-axis gyroscope or accelerometer.
System and method for anti-ambipolar heterojunctions from solution-processed semiconductors
Regents Of The University Of Minnesota
June 28, 2018 - N°20180183423

Van der waals heterojunctions are extended to semiconducting p-type single-walled carbon nanotube (s-swcnt) and n-type film that can be solution-processed with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions can exhibit anti-ambipolar transfer characteristics with high on/off ratios.
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Semiconductors Patent Applications
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  • 132+ full patent PDF documents of Semiconductors-related inventions.
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Low dropout regulator (ldo) circuit
Semiconductor Manufacturing International (shanghai) Corporation
June 28, 2018 - N°20180181152

The present disclosure relates to the technical field of semiconductors, and discloses a low dropout regulator (ldo) circuit. The ldo circuit includes a first adjustment pipe, a second adjustment pipe, a first error amplifier, and a second error amplifier.
Light emitting device
Seoul Viosys Co., Ltd.
June 21, 2018 - N°20180175105

A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light ...
Image sensor and manufacturing method therefor
Semiconductor Manufacturing International (beijing) Corporation
June 21, 2018 - N°20180175098

The present disclosure relates to the technical field of semiconductors, and discloses an image sensor and a manufacturing method therefor. The method includes: providing a semiconductor structure, where the semiconductor structure includes: a semiconductor substrate, and a first active region located on the semiconductor substrate, the first active region including a first doped region and a second doped region abutting ...
Imaging device and imaging unit
Nikon Corporation
June 21, 2018 - N°20180175097

An imaging device having a first surface on which light is incident and a second surface on an opposite side of the first surface, includes a photoelectric conversion section including semiconductors having a same conductivity type, in which an impurity concentration on the second surface side is higher than an impurity concentration on the first surface side.. .
Image sensor and manufacturing method therefor
Semiconductor Manufacturing International (beijing) Corporation
June 21, 2018 - N°20180175082

The present disclosure relates to the technical field of semiconductors, and discloses an image sensor and a manufacturing method therefor. The image sensor includes: a semiconductor substrate; a first active region located on the semiconductor substrate; a doped semiconductor layer located on the first active region; and a contact located on the semiconductor layer, where the first active region includes: ...
Method and apparatus for carrier profiling of semiconductors utilizing simultaneous techniques utilizing a simulator and ...
June 21, 2018 - N°20180172727

Numerous carrier profiling techniques may be combined for simultaneous operation of those techniques on a single material sample. A single apparatus utilizing a field-programmable gate array (“fpga”) may be utilized to simultaneously operate those techniques.
Display apparatus and connecting method of light emitting part thereof
Seoul Viosys Co., Ltd.
June 14, 2018 - N°20180166470

A display apparatus and a method of connecting electrodes thereof. The display apparatus includes: a light emitting part including a plurality of light emitting diodes regularly arranged thereon; and a tft panel part including a plurality of tfts driving the plurality of light emitting diodes, wherein the light emitting part includes a substrate; a plurality of electrodes regularly arranged on ...
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Semiconductors Patent Applications
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  • 132+ full patent PDF documents of Semiconductors-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Integrated circuit with integrally formed micro-channel oscillating heat pipe
Thermavant Technologies, Llc
June 07, 2018 - N°20180158756

A miniaturized oscillating heat pipe (ohp) embedded within an integrated circuit (ic) is provided. The miniaturized oscillating heat pipe (ohp) integrally formed within an integrated circuit (ic) is fabricated to form a monolithic ic device using silicon (or similar future semiconductors) fabrication techniques.
Complex three-dimensional multi-layer structure and manufacturing method thereof
Minuta Technology Co., Ltd.
June 07, 2018 - N°20180156950

The present invention relates to a 3-dimensional complex multilayer structure. The 3-dimensional complex multilayer structure includes a first pattern and a second pattern having different thicknesses formed on one or both surfaces of a plate.
Esters containing non-aromatic cycles as solvents for oled formulations
Merck Patent Gmbh
June 07, 2018 - N°20180155616

The present invention relates to formulations for the preparation of organic electronic devices (oleds) which comprise at least one specific ester solvent containing a non aromatic cycle and at least one organic functional material selected from organic conductors, organic semiconductors, organic fluorescent compounds, organic phosphorescent compounds, organic light-absorbent compounds, organic light-sensitive compounds, organic photosensitisation agents and other organic photoactive compounds, ...
Method to form ohmic contacts to semiconductors using quantized metals
Intel Corporation
May 31, 2018 - N°20180151684

An apparatus including an integrated circuit device including at least one low density of state metal/semiconductor material interface, wherein the at least one low density of state metal is quantized. An apparatus including an integrated circuit device including at least one interface of a low density of state metal and a semiconductor material, wherein a contact area of the ...
Micro display having vertically stacked structure and method of forming the same
Gwangju Institute Of Science And Technology
May 31, 2018 - N°20180151632

Disclosed is a micro display. Each of display portions constituting the micro display includes an individual active layer and p-type semiconductor layer which are on each of a plurality of n-type semiconductors which are each configured in a line form.
Growing iii-v compound semiconductors from trenches filled with intermediate layers
Taiwan Semiconductor Manufacturing Company, Ltd.
May 31, 2018 - N°20180151359

A method of forming an integrated circuit structure includes forming an insulation layer over at least a portion of a substrate; forming a plurality of semiconductor pillars over a top surface of the insulation layer. The plurality of semiconductor pillars is horizontally spaced apart by portions of the insulation layer.
Cleaning compositions for removing post etch residue
Entegris, Inc.
May 31, 2018 - N°20180148669

The disclosure relates to a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors. There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one said polyprotic acid ...
Current source and digital to analog converter
Semiconductor Manufacturing International (shanghai) Corporation
May 24, 2018 - N°20180145699

The present disclosure relates to the technical field of semiconductors, and discloses a current source and a digital to analog convertor. The current source includes a current output circuit and an impedance gain circuit which is configured to increase output impedance of the current output circuit.
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