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Semiconductor

Semiconductor-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Nitride semiconductor light-emitting element base and manufacturing method thereof
Asahi Glass Company, Limited
July 12, 2018 - N°20180199433

To prevent degradation of electrical characteristics caused by a resin filled between electrodes in an ultraviolet light-emitting operation, the present invention provides a base 10 that comprises an insulating base material 11 and two or more metal films 12 and 13 that are formed on one side of the insulating base material 11 and electrically separated from each other. The two or more metal films ...
Configurable computing array die based on printed memory and two-sided integration
Hangzhou Haicun Information Technology Co., Ltd.
July 12, 2018 - N°20180198448

The present invention discloses a new type of configurable gate array—a configurable computing array die based on two-sided integration. It is a monolithic die and comprises at least a configurable computing element and a configurable logic element formed on different sides of a semiconductor substrate.
Semiconductor device driving circuit
Mitsubishi Electric Corporation
July 12, 2018 - N°20180198442

A semiconductor device driving circuit includes: a threshold adjustment circuit; a desaturation voltage detection circuit; and a drive circuit. The threshold adjustment circuit switches the threshold between a first voltage and a second voltage which is larger than the first voltage, outputs the first voltage as the threshold when the semiconductor switching device is in an off-state, and outputs the ...
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Semiconductor integrated circuit, sensor reader, and sensor readout method
Mitsubishi Electric Corporation
July 12, 2018 - N°20180198413

In a sensor reader, an ic chip has a function for amplifying and outputting a sensor signal from each sensor element included in a sensor array, and includes a plurality of channel amplifiers connected each of the sensor elements. When an output switch is closed and the ic chip is in the outputting state, channel switches operate sequentially, and sensor ...
Semiconductor-switch control device
Yazaki Corporation
July 12, 2018 - N°20180198271

A semiconductor-switch control device includes a controller that detects an analog signal of a load current, converts the detected analog signal into a digital signal, and determines an over-current based on the converted digital signal; a short circuit detector that detects an analog signal of a load voltage, and detects an over-current based on the analog signal without converting the ...
Organic light-emitting component and method for producing an organic light-emitting component
Osram Oled Gmbh
July 12, 2018 - N°20180198087

An organic light-emitting component may include: a substrate, a first electrode arranged over the substrate, at least one organic functional layer stack configured to emit radiation and arranged over the first electrode, at least one conductive current spreading structure which is arranged on the first electrode and faces the at least one organic functional layer stack, and a second electrode ...
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Semiconductor Patent Applications
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  • 122+ full patent PDF documents of Semiconductor-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Memory cells, semiconductor devices including the memory cells, and methods of operation
Micron Technology, Inc.
July 12, 2018 - N°20180198063

Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material.
Electronic device
Toshiba Memory Corporation
July 12, 2018 - N°20180198060

An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer which is in contact with the free layer and includes a rare earth ...
Semiconductor devices and methods of fabricating the same
July 12, 2018 - N°20180198059

A device, which may include a semiconductor device, may include a contact plug, a first barrier metal covering a bottom surface of the contact plug and a lower sidewall of the contact plug, such that the first barrier metal exposes an upper sidewall of the contact plug, and an insulation pattern covering the upper sidewall of the contact plug such ...
Malfunction detection device for power generator
Toyota Jidosha Kabushiki Kaisha
July 12, 2018 - N°20180198048

A malfunction detection device is provided for a power generator that includes a thermoelectric transducer module including, as a plurality of thermoelectric transducers, a plurality of semiconductor single crystals in which the band gap energy of an intrinsic semiconductor part is lower than the band gap energies of an n-type semiconductor part and a p-type semiconductor part. The malfunction detection ...
Light emitting diodes with integrated reflector for a direct view display and method of making ...
Glo Ab
July 12, 2018 - N°20180198047

An led subpixel can be provided with a reflector layer that controls viewing angles. After formation of an array of nanowires including first conductivity type cores and active layers, a second conductivity type semiconductor material layer, a transparent conductive oxide layer, and a dielectric material layer are sequentially formed.
Optoelectronic component and a method of producing an optoelectronic component
Osram Opto Semiconductors Gmbh
July 12, 2018 - N°20180198045

An optoelectronic component includes a boundary layer is arranged between a semiconductor body and a metallic layer in a lateral direction, adjoins the semiconductor body at least in places, covers an active layer laterally, and has a lower refractive index compared to the semiconductor body, a metallic layer is configured to prevent the electromagnetic radiation generated during operation of the ...
Optoelectronic lamp device and method of producing same
Osram Opto Semiconductors Gmbh
July 12, 2018 - N°20180198044

An optoelectronic lamp device includes an optoelectronic semiconductor component including a top side including a light-emitting face, and a housing embedding the semiconductor component and leaving free the light-emitting face, wherein a housing face is coated with a light-scattering dielectric resist layer that may scatter light incident on a face of the resist layer facing away from the housing face.. .
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  • 122+ full patent PDF documents of Semiconductor-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
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Method for producing optoelectronic conversion semiconductor chips and composite of conversion semiconductor chips
Osram Opto Semiconductors Gmbh
July 12, 2018 - N°20180198037

A method for producing optoelectronic conversion semiconductor chips and a composite of conversion semiconductor chips are disclosed. In an embodiment the method includes growing a semiconductor layer sequence on a growth substrate, applying an electric contact on to a rear side of the semiconductor layer sequence facing away from the growth substrate, thinning the growth substrate, after thinning, cutting the ...
Semiconductor light-emitting device and method for fabricating the same
Lg Innotek Co., Ltd.
July 12, 2018 - N°20180198030

A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer.
Semiconductor light emitting device including reflective element and method of making same
Glo Ab
July 12, 2018 - N°20180198029

A light emitting device and method of forming the same, the method including etching grooves into semiconductor layers disposed on a substrate to form mesas, forming an insulating layer on the mesas, etching the insulating layer to expose upper surfaces of the mesas, and forming a reflective contact layer on the mesas. The contact layer may include protrusions disposed in ...
Optoelectronic semiconductor chip
Osram Opto Semiconductors Gmbh
July 12, 2018 - N°20180198028

In one embodiment, the optoelectronic semiconductor chip (1) comprises a first semiconductor region (21) of a first conductivity type and a second semiconductor region (23) of a second conductivity type. An active zone (22) configured for generating light is situated between these two semiconductor regions (21, 23).
Electron emitter and light emitting apparatus comprising same
Korea Advanced Institute Of Science And Technology
July 12, 2018 - N°20180198027

The present invention relates to an electron emitter, a method for manufacturing the same, and a light emitting apparatus comprising the same, and, more particularly, to an electron emitter comprising a semiconductor wafer having a nanostructure formed in at least a portion thereof. The present invention is capable of providing a large-area electron emitter, and also capable of providing a ...
Semiconductor light emitting device and method of manufacturing the same
Samsung Electronics Co., Ltd.
July 12, 2018 - N°20180198025

A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an ...
Micro light-emitting diode chip
Playnitride Inc.
July 12, 2018 - N°20180198024

A micro light-emitting diode chip includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer, and the epitaxial structure further includes a first surface, side surface and a second surface opposite to the first surface.
Ultraviolet light emitting device having current blocking layer
Seoul Viosys Co., Ltd.
July 12, 2018 - N°20180198023

Described herein is a highly efficient light emitting device. The light emitting device includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a current blocking layer disposed on the second conductivity-type semiconductor layer; a transparent electrode layer covering the current blocking layer; ...
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