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Semiconductor Device

Semiconductor Device-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Inspection circuit, semiconductor storage element, semiconductor device, and connection inspection method
Lapis Semiconductor Co., Ltd.
August 09, 2018 - N°20180226973

An inspection circuit for inspecting a connection state between a semiconductor storage element including a storage section, and a semiconductor element connected to the semiconductor storage element, the inspection circuit includes: an input terminal that is input with a test signal to be sent to a first controller; an input/output terminal that is input and output with data to ...
Semiconductor device and system including the same
Sk Hynix Inc.
August 09, 2018 - N°20180226965

A semiconductor apparatus may be provided. The semiconductor apparatus may include a first buffer configured to generate a first preliminary clock and a first preliminary clock bar based on an external clock, an external clock bar, and a node voltage code.
Vco tuning range extension using parasitic diode capacitance control
International Business Machines Corporation
August 09, 2018 - N°20180226921

Embodiments of methods and apparatuses may provide the capability to extend the tuning range of a vco in a way that does not degrade vco circuit performance. For example, the parasitic capacitance of semiconductor devices in the vco circuit may be utilized to extend the tuning range of a vco without significant degradation of vco circuit performance.
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Coating solution for non-light-emitting organic semiconductor device, organic transistor, compound, organic semiconductor material for non-light-emitting ...
August 09, 2018 - N°20180226589

(in formula (2), r11 and r12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in formula (2) may be substituted with a halogen atom.). .
Semiconductor device having magnetic tunnel junction structure and method of fabricating the same
Samsung Electronics Co., Ltd.
August 09, 2018 - N°20180226575

A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor device includes a lower electrode and a magnetic tunnel junction structure disposed on the lower electrode.
Semiconductor structures and devices and methods of forming semiconductor structures and magnetic memory cells
Micron Technology, Inc.
August 09, 2018 - N°20180226570

A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor trap material comprising at least one attracter species having at least one trap site and a chemical affinity for the diffusive species.
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Semiconductor Device Patent Applications
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Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices
E I Du Pont De Nemours And Company
August 09, 2018 - N°20180226522

The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium..
Semiconductor device and method of forming embedded thermoelectric cooler for heat dissipation of image sensor
Semiconductor Components Industries, Llc
August 09, 2018 - N°20180226515

A semiconductor device has a first substrate with a vertical electrical interconnect structure formed between opposing surfaces of the first substrate. A semiconductor die is embedded within the first substrate.
Semiconductor device and method for manufacturing same
Sharp Kabushiki Kaisha
August 09, 2018 - N°20180226512

A semiconductor device includes a tft (101), the tft including a gate electrode (12), a gate insulating layer (14) covering the gate electrode, a metal oxide layer (16a) including a channel region (16c), a source contact region (16s) and a drain contact region (16d), a first electrode (18a) in contact with the source contact region, an insulating layer (22) formed on the metal oxide ...
Semiconductor devices with low junction capacitances and methods of fabrication thereof
Taiwan Semiconductor Manufacturing Company Ltd.
August 09, 2018 - N°20180226506

Semiconductor devices with low junction capacitances and methods of fabrication thereof are described. In one embodiment, a method of forming a semiconductor device includes forming isolation regions in a substrate to form active areas.
Finfet with source/drain structure and method of fabrication thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
August 09, 2018 - N°20180226504

A semiconductor device includes a substrate including a first fin element, a second fin element, and a third fin element. A first source/drain epitaxial feature is disposed over the first and second fin elements.
Semiconductor device with low band-to-band tunneling
International Business Machines Corporation
August 09, 2018 - N°20180226499

The invention includes a semiconductor device comprising an interlevel dielectric layer over a buried insulator layer over a semiconductor substrate; a source and drain in the interlevel layer; a channel between the source and drain, the channel including a first region having a first bandgap adjacent to a second region having a second bandgap, wherein the first band gap is ...
Semiconductor device
Japan Display Inc.
August 09, 2018 - N°20180226498

A semiconductor device including a first oxide insulating layer, a barrier layer above the first oxide insulating layer, the barrier layer including an opening, a second oxide insulating layer above the first oxide insulating layer at a position overlapping the opening, an oxide semiconductor layer facing the first oxide insulating layer interposed by the second oxide insulating layer at a ...
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Semiconductor Device Patent Applications
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  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
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Fabrication of multi-channel nanowire devices with self-aligned internal spacers and soi finfets using selective silicon ...
Intel Corporation
August 09, 2018 - N°20180226490

Methods of selectively nitriding surfaces of semiconductor devices are disclosed. For example, a hardmask is formed on the top portion of the fins to create soi structure.
Semiconductor device and electrical apparatus
Toshiba Electronic Devices & Storage Corporation
August 09, 2018 - N°20180226487

According to an embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the second conductivity type, a gate electrode, and a ...
Production method for semiconductor device
Fuji Electric Co., Ltd.
August 09, 2018 - N°20180226486

A method for producing a semiconductor device includes implanting protons from a rear surface of a semiconductor substrate of a first conductivity type, and after the implanting protons, forming a first semiconductor region of the first conductivity type having a impurity concentration higher than that of the semiconductor substrate by performing an annealing process for the semiconductor substrate in an ...
Semiconductor device with different gate trenches
Infineon Technologies Austria Ag
August 09, 2018 - N°20180226481

A semiconductor device includes a first trench and a second trench in a first main surface of a semiconductor substrate. Each of the first and second trenches includes first sections extending lengthwise in a first direction and a second section extending lengthwise in a second direction transvers to the first direction, the second section of the first trench being disposed ...
Semiconductor device and manufacturing method thereof
Rohm Co., Ltd.
August 09, 2018 - N°20180226480

A semiconductor device includes a semiconductor layer of a first conductivity type having a main surface at which a trench is formed, a gate insulating layer formed along a side wall of the trench, a gate electrode embedded in the trench with the gate insulating layer interposed therebetween and having an upper surface located below the main surface of the ...
Semiconductor devices and fabricating methods thereof
Samsung Electronics Co., Ltd.
August 09, 2018 - N°20180226475

Provided are semiconductor devices and fabricating methods thereof. The semiconductor device includes a field insulating layer formed in a substrate, an interlayer dielectric layer formed on the field insulating layer and including a trench exposing at least a portion of the field insulating layer, a deposition insulating layer formed in the trench to be disposed on the field insulating layer, ...
Semiconductor device, semiconductor device manufacturing method, inverter circuit, driving device, vehicle, and elevator
Kabushiki Kaisha Toshiba
August 09, 2018 - N°20180226474

A semiconductor device according to the embodiments described herein includes a silicon carbide layer and a silicon oxide layer. The silicon oxide layer is disposed on the silicon carbide layer and contains at least one element selected from a group of phosphorus (p), arsenic (as), antimony (sb), and bismuth (bi).
Semiconductor device and method of manufacturing the same
Kabushiki Kaisha Toshiba
August 09, 2018 - N°20180226473

A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided on the first semiconductor region, a third semiconductor region of the first conductivity type provided on the second semiconductor region, a first insulating part provided in the first semiconductor region, a first electrode provided in the first ...
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