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Memristor

Memristor-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Hierarchical computations on sparse matrix rows via a memristor array
Hewlett Packard Enterprise Development Lp
June 21, 2018 - N°20180173677

Hierarchical computation on sparse matrix rows is disclosed. One example is a circuit including a sparse row processor to identify a sparse row of a matrix, where the identified row has a number of non-zero entries less than a threshold, associate a sub-vector of an input vector with a sub-row of the identified row, where the sub-row comprises the non-zero ...
Compensated readout of a memristor array, a memristor array readout circuit, and method of fabrication ...
King Abdullah University Of Science And Technology
June 14, 2018 - N°20180166134

A method for readout of a gated memristor array, a memristor array readout circuit and method of fabrication thereof are provided. In the context of the method, the method includes selecting a row of a memristor array associated with a desired cell, measuring the value of the selected memristor row, and selecting a column of a memristor array associated with ...
Memristor logic design using driver circuitry
Board Of Regents, The University Of Texas System
June 07, 2018 - N°20180159536

A new lower-power gate design for memristor-based boolean operations. Such a design offers a uniform cell that is configurable to perform all boolean operations, including the xor operation.
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Resistive content addressable memory based in-memory computation architecture
The Regents Of The University Of California
May 17, 2018 - N°20180137916

Various examples are provided examples related to resistive content addressable memory (rcam) based in-memory computation architectures. In one example, a system includes a content addressable memory (cam) including an array of cells having a memristor based crossbar and an interconnection switch matrix having a gateless memristor array, which is coupled to an output of the cam.
Memristance feedback tuning
Hewlett Packard Enterprise Development Lp
April 19, 2018 - N°20180108410

An example device in accordance with an aspect of the present disclosure includes at least one current comparator, a plurality of threshold currents, and a controller. The current comparator is to compare a memristor current to a plurality of threshold currents.
Temperature compensation circuits
Hewlett Packard Enterprise Development Lp
April 19, 2018 - N°20180108403

A temperature compensation circuit may comprise a temperature sensor to sense a temperature signal of a memristor crossbar array, a signal converter to convert the temperature signal to an electrical control signal, and a voltage compensation circuit to determine a compensation voltage based on the electrical control signal and pre-calibrated temperature data of the memristor crossbar array.. .
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Making of organic nanobiomimetic memristor and memcapacitors and its applications in dual sensing of a ...
March 29, 2018 - N°20180088069

An organic memristor/memcapacitor device comprises a biomimetic membrane attached on the surface of an electrode forming variable size toroidal matrix cross-linked to derivative cyclodextrin polymers forming cross bars, that facilitate a dual functioning biosensor characteristics which enabled to detecting voltage and current changes of a biomarker β-amyloid (aβ) in pm concentration that direct linked to ...
Multi-memristive synapse with clock-arbitrated weight update
International Business Machines Corporation
March 22, 2018 - N°20180082177

A method and system providing a multi-memristive synaptic element for a cognitive computing system. The multi-memristive synaptic element comprises an array of memristive devices.
Memristive crossbar array having multi-selector memristor cells
Hewlett Packard Enterprise Development Lp
March 15, 2018 - N°20180075904

A memristive crossbar array is described. The crossbar array includes a number of row lines and a number of column lines intersecting the row lines to form a number of cross points.
Neuron circuits
Hewlett Packard Enterprise Development Lp
March 15, 2018 - N°20180075337

Examples disclosed herein relate to neuron circuits and methods for generating neuron circuit outputs. In some of the disclosed examples, a neuron circuit includes a memristor and first and second current mirrors.
Ternary content addressable memories having a bit cell with memristors and serially connected match-line transistors
Hewlett Packard Enterprise Development Lp
February 08, 2018 - N°20180040374

An example ternary content addressable memory. A bit cell of the memory may include a first memristor that has a first terminal that is connected to a first data line and a second terminal that is selectively connected to a second data line via a first switching transistor.
Spectrally programmable memristor-based optical computing
Halliburton Energy Services, Inc.
February 01, 2018 - N°20180031729

A memristor element is used to create a spectrally programmable optical computing device for use in, for example, a downhole environment. An electromagnetic field is applied across the memristor element in order to alter its spectral properties.
Dynamic logic memcap
Hewlett-packard Development Company, L.p.
January 18, 2018 - N°20180017870

An integrated circuit may include a substrate with a plurality of transistors formed in the substrate. The plurality of transistors may be coupled to a first metal layer formed over the plurality of transistors.
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Resistive random access memory (reram) device
Hewlett Packard Enterprise Development Lp
January 04, 2018 - N°20180006088

One example includes a resistive random access memory (reram) device. The device includes a set of electrodes to receive a voltage.
Temperature gradients for controlling memristor switching
Hewlett Packard Enterprise Development Lp
December 28, 2017 - N°20170372782

A memristor includes a bottom electrode, a top electrode, and an active region disposed therebetween. The active region has an electrically conducting filament in an electrically insulating medium, extending between the bottom electrode and the top electrode.
Logic design with unipolar memristors
Technion Research & Development Foundation Limited
November 30, 2017 - N°20170345497

Logic gates are made from first and second resistive elements connected together to form a voltage divider. One or both of the resistive elements is a unipolar memristor.
Method for implementing memristive logic gates
November 23, 2017 - N°20170337968

An embodiment of the present invention provides a method for implementing boolean functionality to create and, or, nand, nor, or not logic gates using a single memristor. In an embodiment, a first voltage is applied to the memristor within a predetermined range of one of the prescribed boolean functions to be performed by the memristor.
Memristive cross-bar array for determining a dot product
November 02, 2017 - N°20170316827

A method of obtaining a dot product includes applying a number of first voltages to a corresponding number of row lines within a memristive cross-bar array to change the resistive values of a corresponding number of memristors located a junctions between the row lines and a number of column lines. The first voltages define a corresponding number of values within ...
Self-organizing logic gates and circuits and complex problem solving with self-organizing circuits
November 02, 2017 - N°20170316309

Self-organizing logic gates formed from a combination of memristor devices and dynamic correction modules configured to provide a stable operation upon application of a signal to any terminal. A solg of the invention can accept signals from any terminal and does not require an absence of signals at any other terminal.
Integrated circuit devices comprising memristors
Hewlett-packard Development Company, L.p.
October 26, 2017 - N°20170305153

In some examples, an integrated circuit device includes a substrate, a memristor over the substrate and comprising a first metal layer as a first electrode, a second metal layer as a second electrode, and a switching oxide layer between the first and second metal layers, and a thermal resistor layer over the substrate.. .
Coupled memristor devices to enable feedback control and sensing of micro/nanoelectromechanical actuator and sencors
October 19, 2017 - N°20170297908

A mems apparatus with dynamic displacement control includes a mems parallel plate capacitor integrated with one or more memristors in a series configuration wherein a displacement is observable as a function of memristance, such that an upper electrode position is capable of being interpreted in a form of a resistance rather than a capacitance. The current is limited by said ...
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