Follow us on Twitter
twitter icon@FreshPatents


Antiparallel patents

      

This page is updated frequently with new Antiparallel-related patent applications.

Stabilized minimal coiled-coil mimetics
This invention relates to a macrostructure that includes an antiparallel coiled-coil structure shown below or a parallel coiled-coil structure shown below and described in the present application.. .

Magnetoresistance effect element and magnetic memory device
A magnetoresistance effect element includes a recording layer containing a ferromagnetic body, and including a first fixed and second magnetization regions having magnetization components fixed substantially in a direction antiparallel to the in-plane direction to each other, and a free magnetization region disposed between the first and second fixed magnetization regions and having a magnetization component invertible in the in-plane direction, a domain wall disposed between the first fixed magnetization region and the free magnetization region, and being movable within the free magnetization region, and a magnetic nanowire having a width of 40 nm or less. The thickness of the recording layer is 40 nm or less and at least half but no more than twofold the width of the magnetic nanowire.
Tohoku University


Technologies for physically unclonable functions with magnetic tunnel junctions
Technologies for a physically unclonable function with magnetic tunnel junctions (mtjs) is disclosed. An mtj may have a fixed layer and a free layer.

Memory device
According to one embodiment, a memory device includes: a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers; and a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a current pulse to the magnetoresistive element. A first pulse pattern used in the first writing is different from a second pulse pattern used in the second writing..
Toshiba Memory Corporation


Magnetic resonance imaging (mri) coil with pin diode decoupling circuit
A magnetic resonance imaging (mri) radio frequency (rf) coil comprising an lc circuit including at least one series capacitor, and a decoupling circuit connected in parallel to the lc circuit. The decoupling circuit is configured to decouple the mri rf coil from one or more other mri rf coils using passive decoupling upon the production of an induced voltage in the decoupling circuit, or to actively decouple the mri rf coil from one or more other mri rf coils upon the insertion of a dc bias into the decoupling circuit.
Quality Electrodynamics, Llc


Tunnel magnetoresistive sensor having stabilized magnetic shield and dielectric gap sensor
An apparatus according to one embodiment includes an array of magnetic transducers each having: a current-perpendicular-to-plane sensor, and a stabilizing layered structure adjacent the sensor. The stabilizing layered structure includes a first ferromagnetic layer, a second ferromagnetic layer, and an antiparallel coupling layer between the ferromagnetic layers.
International Business Machines Corporation


Magnetization alignment in a thin-film device
We disclose a magnetic device having a pair of coplanar thin-film magnetic electrodes arranged on a substrate with a relatively small edge-to-edge separation. In an example embodiment, the magnetic electrodes have a substantially identical footprint that can be approximated by an ellipse, with the short axes of the ellipses being collinear and the edge-to-edge separation between the ellipses being smaller than the size of the short axis.
Alcatel-lucent Usa Inc.


Magnetic logic unit (mlu) cell for sensing magnetic fields with improved programmability and low reading consumption
A magnetic logic unit (mlu) cell for sensing magnetic fields, including: a magnetic tunnel junction including a storage layer having a storage magnetization, a sense layer having a sense magnetization; a tunnel barrier layer between the storage layer and the sense layer; and a pinning layer pinning the storage magnetization at a low threshold temperature and freeing it at a high threshold temperature. The sense magnetization is freely alignable at the low and high threshold temperatures and the storage layer induces an exchange bias field magnetically coupling the sense layer such that the sense magnetization tends to be aligned antiparallel or parallel to the storage magnetization.
Crocus Technology Sa


Sequential electromechanical brake with advanced emergency tripping
An electromechanical brake comprising mobile induced elements or sectors or frames (2), the number of mobile induced elements (2) or sectors being at least three, where one of the sectors acts faster than the rest, and where one of the sectors acts in a delayed manner with respect to the rest of the sectors in the case of an emergency, said time-delayed actuation being achieved by means of the antiparallel arrangement of a diode (6) on the coil (5) associated with said sector. Smooth and progressive stop is thus achieved in the case of an emergency..
Thyssenkrupp Ag


Variable gain distributed amplifier systems and methods
Distributed amplifier systems and methods are disclosed. An example distributed amplifier system includes first stage traveling wave amplifier (twa) circuitry that is controllable to provide one of a first set of discrete gain settings.
Keysight Technologies, Inc.


Storage element and storage apparatus

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween.
Sony Corporation

Removal of suspended solids from waste water

A system and method for removing suspended solids from waste water includes flowing a volume of waste water through a series of flow chambers arranged between an inlet and an outlet. Each of the flow chambers includes a flow path that is substantially transverse (orthogonal) to a predominant flow path between the inlet and the outlet.

Power converter

In a multilevel converter, three first rectifying elements are respectively connected between three arms and a negative voltage terminal. Three second rectifying elements are respectively connected to the three first rectifying elements in antiparallel.
Mitsubishi Electric Corporation

Stabilizing layered structure for magnetic tape heads

An apparatus according to one embodiment includes an array of magnetic read transducers each having a current-perpendicular-to-plane sensor, magnetic shields on opposite sides of the sensor in an intended direction of media travel thereacross, and a stabilizing layered structure between at least one of the magnetic shields and the sensor. The stabilizing layered structure has an antiferromagnetic layer, a first ferromagnetic layer adjacent the antiferromagnetic layer, and a second ferromagnetic layer.
International Business Machines Corporation

Power module

A power module includes an inverter circuit and a pair of conductors that sandwich the inverter circuit. The inverter circuit includes a positive bus bar, a negative bus bar, output bus bars, and element pairs.
Toyota Jidosha Kabushiki Kaisha

Symmetric mems piezoelectric accelerometer for lateral noise

Apparatus and associated methods relate to maximizing a signal to noise ratio of an accelerometer by inhibiting signals arising from movements of a proofmass in directions perpendicular to a direction of intended sensitivity. The direction of intended sensitivity of the accelerometer is along an axis of the proofmass.
Rosemount Aerospace Inc.

Magnetic storage device and manufacturing magnetic storage device

According to one embodiment, a magnetic storage device includes a first and a second magnetoresistive effect element, which are disposed in an arrangement pattern including a plurality of arrangement areas, and in each of which a second ferromagnetic layer and a third ferromagnetic layer are antiferromagnetically coupled. A magnetization orientation of the third ferromagnetic layer of the first magnetoresistive effect element is antiparallel to a magnetization orientation of the third ferromagnetic layer of the second magnetoresistive effect element.
Kabushiki Kaisha Toshiba

Manufacturing liquid crystal panel

A manufacturing method of a liquid crystal panel is provided with steps of: providing an array substrate having a first electrode with a plurality of slots and a second electrode thereon, and a color filter substrate; applying a first photo alignment film to the array substrate, and performing a first irradiation treatment on the first photo alignment film to have a first pretilt angle; applying a second photo alignment film to the color filter substrate, and performing a second irradiation treatment on the second photo alignment film to have a second pretilt angle antiparallel to the first pretilt angle; sealing a liquid crystal molecule and a photopolymerizable monomer within a space between the first photo alignment film and the second photo alignment film to form a liquid crystal panel; and performing a third irradiation treatment on the liquid crystal panel to carry out a polymerization of the photopolymerizable monomer.. .
Shenzhen China Star Optoelectronics Technology Co.,ltd.

Beta sheet tapes ribbons in tissue engineering

There is described a material comprising tapes, ribbons, fibrils or fibres characterized in that each of the ribbons, fibrils or fibres have an antiparallel arrangement of peptides in a β-sheet tape-like substructure.. .
University Of Leeds

Welding power supply with half bridge

A method and apparatus for providing welding-type power is disclosed. It includes an input circuit, a dc bus, an output circuit, and a control module.
Iiiinois Tool Works Inc.

Magnetic tunnel junction device

The output voltage of an mram is increased by means of an fe(001)/mgo(001)/fe(001) mtj device, which is formed by microfabrication of a sample prepared as follows: a single-crystalline mgo (001) substrate is prepared. An epitaxial fe(001) lower electrode (a first electrode) is grown on a mgo(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum.
National Institute Of Advanced Industrial Science And Technology

Mobile zoom using multiple optical image stabilization cameras

In some embodiments, a first camera unit of a multifunction device for capturing a first image of a first visual field includes a first actuator for moving a first optical package. A second camera unit includes a second actuator for moving a second optical package.
Apple Inc.

Spin-transfer torque memory (sttm) devices having magnetic contacts

Techniques are disclosed for forming integrated circuit structures including a magnetic tunnel junction (mtj), such as spin-transfer torque memory (sttm) devices, having magnetic contacts. The techniques include incorporating an additional magnetic layer (e.g., a layer that is similar or identical to that of the magnetic contact layer) such that the additional magnetic layer is coupled antiferromagnetically (or in a substantially antiparallel manner).
Intel Corporation

Electric power converter and mri system comprising such converter

The present specification relates to an electric power converter, comprising at least a set of four controllable power switches, arranged in an h-bridge or a functionally equivalent circuit comprising two switching legs of two series switches connected to a voltage source, each power switch comprising an antiparallel diode, a controller configured for controlling the switches with a blanking time, a feedback loop for the load current, characterised by a first bias current injection circuit, coupled to the central point of the first leg of the h-bridge and a second bias current injection circuit, coupled to the central point of the second leg of the h-bridge. The specification further relates to a mri scanner, provided with an electric power converter according to any of the preceding claims, for driving the gradient coils..
Prodrive Technologies B.v.

Systems and methods for implementing magnetoelectric junctions including integrated magnetization components

Systems and methods in accordance with embodiments of the invention implement magnetoelectric junctions that include integrated magnetization components. In one embodiment, a magnetoelectric junction includes: a first fixed layer; a free layer; a dielectric layer disposed between the first fixed layer and the free layer; at least one magnetization layer that is disposed proximate the free layer; where: the first fixed layer is magnetized in a first direction; the free layer can adopt a magnetization direction that is either substantially parallel with or antiparallel with the first direction; the at least one magnetization layer is magnetized in a second direction that is orthogonal to the first direction; the magnetoelectric junction is characterized by a vcma coefficient of at least approximately 80 fj/v·m; and the magnetoelectric junction is configured such that a voltage pulse of a proper length in time can cause the free layer to invert its magnetization direction..
Inston Inc.

Light valve device, infrared display apparatus, dedicated spectacles and system

The present invention discloses a light valve device, an infrared display apparatus, dedicated spectacles and a system, to realize with naked eyes, only a black picture plane without any information can be seen on a display screen, but with spectacles, effective image information can be seen on the display screen; as a result, the image display is more concealed. The light valve device comprises a first liquid crystal cell and a second liquid crystal cell that are oppositely disposed to each other; the first liquid crystal cell and the second liquid crystal cell are both formed by two substrates that are oppositely arranged, and alignment films with parallel or antiparallel alignment directions are formed on the inside the two substrates respectively; cholesteric liquid crystals with opposite arrangement and rotation directions are filled in the first liquid crystal cell and the second liquid crystal cell respectively..
Boe Technology Group Co., Ltd.

Lighting system including a protection circuit, and corresponding protecting light sources from electrostatic discharges

Various embodiments may relate to a lighting system including a string of light sources connected in series between a first terminal and a second terminal, wherein at least one electrical contact of the string of light sources is accessible. The system further includes a protection circuit that protects the light sources from an electrostatic discharge applied to the electrical contact that is accessible.
Osram Gmbh

Trenched and implanted bipolar junction transistor

The present invention concerns a monolithically merged trenched-and-implanted bipolar junction transistor (ti-bjt) with antiparallel diode and a method of manufacturing the same. Trenches are made in a collector, base, emitter stack downto the collector.
United Silicon Carbide, Inc.

System and soft switching power inversion

A power inversion system includes an input and output coupleable to a dc power and an ac load, respectively, and a power inverter including a plurality of phase legs each having two bridge legs coupled in parallel with at least two switch and antiparallel diode pairs coupled in series. The system also includes a plurality of inductors, with at least one inductor coupled between a midpoint of each bridge leg and an lcl filter, the inductors in each phase leg being magnetically coupled.
General Electric Company

Storage element and storage apparatus

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween.
Sony Corporation

Bidirectional power switch with improved switching performance

A bidirectional power switch includes first and second thyristors connected in antiparallel between first and second conduction terminals of the switch. The first thyristor is of an anode-gate thyristor, and the second thyristor is of a cathode-gate thyristor.
Stmicroelectronics (tours) Sas

Beta sheet tapes ribbons in tissue engineering

There is described a material comprising tapes, ribbons, fibrils or fibres characterized in that each of the ribbons, fibrils or fibres have an antiparallel arrangement of peptides in a β-sheet tape-like substructure wherein the material comprises a pair of self assembling complementary polypeptides.. .
University Of Leeds

Control magnetoresistance effect element and control device for magnetoresistance effect element

A control method for a magnetoresistance effect element and a control device for the magnetoresistance effect element that provide a higher writing speed and lower power consumption. When the magnetization direction of a second magnetic layer is nearly parallel to the magnetization direction of a first magnetic layer, a first voltage is applied across the first and second magnetic layer so that the magnetization direction of the second magnetic layer is reversed by modifying the direction of the magnetization easy axis thereof, followed by the application of a second voltage.
Tohoku University

Integrated electronic device comprising a temperature transducer and determining an estimate of a temperature difference

An integrated electronic device including an electronic component and a temperature transducer formed in a first die. The temperature transducer including a first diode and a second diode which are connected in antiparallel..
Stmicroelectronics S.r.l.

Electric motor and generator

Disclosed are various embodiments for a direct current electric motor and generator. The motor comprises a housing.

Submodule for modular multi-level converter and application thereof

A sub-module for a modular multi-level converter, a converter comprising the sub-module, and an application thereof. The sub-module comprises a first switching module (1), a second switching module (2), a direct current capacitor (4), and a third switching module (3).
Huazhong University Of Science And Technology

Magnetic storage device

A magnetic storage device of one embodiment includes a first and second magnetoresistive effect elements. The first magnetoresistive element includes a first magnetic layer having a first coercivity, a second magnetic layer having a second coercivity higher than the first coercivity, and a third magnetic layer having a third coercivity higher than the second coercivity.

Systems and methods for implementing robust magnetoelectric junctions

Robust magnetoelectric junctions (mejs) are disclosed. In one embodiment, an mej includes: a first fixed layer; a free layer; a seed layer; a cap layer; and a dielectric layer disposed between the first fixed layer and the free layer; where: one of the seed layer and the cap layer is disposed adjacently to a ferromagnetic layer; the first fixed layer is magnetized in a first direction; the free layer can adopt a magnetization direction that is either substantially parallel with or substantially antiparallel with the first direction; when a potential difference is applied across the mej, the coercivity of the free layer is reduced for the duration of the application of the potential difference; and at least one of the seed layer and the cap layer includes one of: molybdenum, tungsten, iridium, bismuth, rhenium, and gold..
Inston Inc.

High-performance device for protection from electrostatic discharge

A semiconductor device for protection from electrostatic discharge includes a number of modules for protection from electrostatic discharge. Each module includes a thyristor having terminals and a gate, and a diode coupled in antiparallel to the terminals of the thyristor.
Stmicroelectronics Sa

Radiation-emitting semiconductor chip and producing radiation-emitting semiconductor chips

A radiation-emitting semiconductor chip having a semiconductor body including a semi-conductor layer sequence having an active region that generates radiation, a first semiconductor layer of a first conductor, and a second semiconductor layer of a second conductor different from the first conductor, and having a carrier on which the semiconductor body is arranged, wherein a pn junction is formed in the carrier, the carrier has a first contact and a second contact on a rear side facing away from the semiconductor body, and the active area and the pn junction connect to one another in antiparallel in relation to the forward-bias direction by the first contact and the second contact.. .
Osram Opto Semiconductors Gmbh

Beta sheet tapes ribbons in tissue engineering

There is described a material comprising tapes, ribbons, fibrils or fibres characterized in that each of the ribbons, fibrils or fibres have an antiparallel arrangement of peptides in a β-sheet tape-like substructure wherein the material comprises a pair of self assembling complementary polypeptides.. .

Electronic device

This patent document provides an electronic device capable of improving the characteristics of a variable resistance element. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a variable resistance element capable of being included in the semiconductor memory, and including a fixed layer, a tunnel barrier layer, and a variable layer laminated therein, wherein the variable resistance element is capable of allowing a slope of a graph of a switching current density as a function of an external magnetic field to be proportional to the square of “h/hk” when the magnetization directions of the fixed layer and the variable layer are switched from a parallel state to an antiparallel state.

Tunneling magnetoresistive (tmr) sensor with a soft bias layer

An apparatus according to one embodiment includes a read sensor. The read sensor has an antiferromagnetic layer (afm), a first antiparallel magnetic layer (ap1 ) positioned above the afm layer in a first direction oriented along a media-facing surface and perpendicular to a track width direction, a non-magnetic layer positioned above the ap1 in the first direction, a second antiparallel magnetic layer (ap2) positioned above the non-magnetic layer in the first direction, a harrier layer positioned above the ap2 in the first direction, and a free layer positioned above the barrier layer in the first direction.
Hgst Netherlands B.v.

Sensor assembly for use in sensor bearings

A sensor assembly for use in sensor bearings, the sensor assembly comprising at least two sensor units configured to be arranged on a ring of the sensor bearing in different angular positions with regard to the rotation axis of the bearing. Each of the sensor units includes at least one hall sensor plate.
Aktiebolaget Skf

Sub-module, protection unit, converter, and control method thereof

Disclosed are a submodule structure formed of an energy storage element, a first turn-off device, a second turn-off device, a third turn-off device, a freewheeling diode, a series resistor, and diodes respectively in antiparallel connection with the turn-off devices, and a converter completely or partially formed of the submodules. Also disclosed are a relevant protection unit and a control method for the converter.
Nr Electric Co., Ltd.

Power limiter

Embodiments provide a limiter circuit that includes a power splitter coupled with a plurality of antiparallel diode pairs. In some embodiments, the power splitter may be part of a first stage of the limiter circuit.

Magnetoresistive element, manufacturing magnetoresistive element, magnetic head, and magnetic recording and reading apparatus

A magnetoresistive element according to an embodiment includes: a multilayer element including a first magnetic layer, a magnetization direction of the first magnetic layer being pinned, a nonmagnetic layer disposed on the first magnetic layer, a second magnetic layer disposed in a first region on the nonmagnetic layer, a magnetization direction of the second magnetic layer being pinned and antiparallel to the magnetization direction of the first magnetic layer, and a third magnetic layer disposed in a second region that is different from the first region on the nonmagnetic layer near one of two opposite end faces of the nonmagnetic layer, a magnetization direction of the third magnetic layer being changeable by an external magnetic field, a lower face of the nonmagnetic layer being in contact with an upper face of the first magnetic layer.. .
Kabushiki Kaisha Toshiba

Single-package bridge-type magnetic field sensor

A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package.
Multidimension Technology Co., Ltd.

Semiconductor device

A semiconductor device includes: a first well provided in a semiconductor substrate; a second well provided in the semiconductor substrate, so as to be isolated from the first well; a schottky barrier diode formed in the first well; and a pn junction diode formed in the second well, with an impurity concentration of the pn junction thereof set higher than an impurity concentration of the schottky junction of the schottky barrier diode, and being connected antiparallel with the schottky barrier diode.. .
Fujitsu Semiconductor Limited

Magnetic head and magnetic recording and reproducing apparatus

A magnetic head of an embodiment includes a stack, side shields, and a first and a second magnetic shield. The stack includes a pin layer having a fixed magnetization direction, a first free layer having a magnetization direction to change in accordance with an external magnetic field, a second free layer antiferromagnetically exchange-coupled with the first free layer and having a magnetization direction to change in accordance with the field, and an antiferromagnetic layer exchange-coupled with the second free layer.
Kabushiki Kaisha Toshiba

Rotation rate sensor having a substrate having a main extension plance for detecting a rotation rate

A rotation-rate sensor having a substrate with main extension plane, for detecting a rotation rate, extending in a direction parallel/orthogonal to the main plane; the sensor including a primary/secondary pair of seismic masses; the primary pair having first/second primary masses; the secondary pair having first/second secondary masses; the first/second primary masses being movable relative to the substrate along a primary deflection direction extending parallel to the main plane; the first/second secondary masses being movable relative to the substrate along a secondary deflection direction extending parallel to the main plane; the first/second primary masses and the first/second primary masses being movable antiparallel or parallel to one another corresponding to the deflection direction, essentially extending orthogonally to the secondary deflection direction; and the primary pair and/or secondary pair being drivable so that, based on sensor rotation, the coriolis force leads to deflection of the first/second primary masses and/or the first/second secondary masses.. .
Robert Bosch Gmbh

Beta sheet tapes ribbons in tissue engineering

There is described a material comprising tapes, ribbons, fibrils or fibres characterized in that each of the ribbons, fibrils or fibres have an antiparallel arrangement of peptides in a β-sheet tape-like substructure.. .
University Of Leeds

Single-chain antiparallel coiled coil proteins

The present invention relates to single-chain proteins of the formula hrs1-l1-hrs2-l2-hrs3, wherein hrs1, hrs2 and hrs3 are heptad repeat sequences and l1 and l2 are structurally flexible linker sequences, and wherein hrs1, hrs2 and hrs3 form a thermodynamically stable triple-stranded, antiparallel, alpha-helical coiled coil structure in aqueous solution. The invention also relates to amino acid sequence variants, conditions and methods to obtain such proteins and variants, and usages thereof, especially their usage as scaffolds and as therapeutic products..
Complix Nv

Bidirectional switch

A bidirectional switch is formed in a semiconductor substrate of a first conductivity type. The switch includes first and second thyristors connected in antiparallel extending vertically between front and rear surfaces of the substrate.
Stmicroelectronics (tours) Sas

Bidirectional switch

A bidirectional switch formed in a substrate includes first and second main vertical thyristors in antiparallel connection. A third auxiliary vertical thyristor has a rear surface layer in common with the rear surface layer of the first thyristor.
Stmicroelectronics (tours) Sas

Magnetic tunnel junction device

The output voltage of an mram is increased by means of an fe(001)/mgo(001)/fe(001) mtj device, which is formed by microfabrication of a sample prepared as follows: a single-crystalline mgo (001) substrate is prepared. An epitaxial fe(001) lower electrode (a first electrode) is grown on a mgo(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum.
National Institute Of Advanced Industrial Science And Technology

Magneto-electronic devices and methods of production

A magneto-electronic device includes a first electrode, a second electrode spaced apart from the first electrode, and an electric-field-controllable magnetic tunnel junction arranged between the first electrode and the second electrode. The electric-field-controllable magnetic tunnel junction includes a first ferromagnetic layer, an insulating layer formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the insulating layer.
The Johns Hopkins University