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Transistors

Transistors-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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NEW Low voltage differential signaling driver
May 17, 2018 - N°20180139076

A low voltage differential signaling driver includes at least one output circuit, a first control circuit, and a second control circuit. The output circuit includes a first input terminal to receive a first input signal, a second input terminal to receive a second input signal, a first output terminal to output a first output signal, a second output terminal to ...
NEW Low power cmos buffer circuit
Nxp Usa, Inc.
May 17, 2018 - N°20180138903

A cmos buffer circuit includes a first branch circuit having first and second transistors connected in parallel between a voltage source and ground, and a second branch having third and fourth transistors connected in parallel between the voltage source and ground. The gates of the first and second transistors receive an input signal. The gates of the third and fourth ...
NEW Low output impedance, high speed and high voltage generator for use in driving a capacitive ...
Stmicroelectronics, Inc.
May 17, 2018 - N°20180138898

A voltage generator circuit uses a feedback loop to regulate an output voltage at an output node. A pair of opposite conductivity source-follower transistors are coupled to the output node. A first one of the source-follower transistors operates to provide a fast current transient for charging a capacitive load that is switchably connected to the output node. A second one ...
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NEW Self-powered clock input buffer
Qualcomm Incorporated
May 17, 2018 - N°20180138822

A method and system for self-powering a clock input buffer is disclosed. The system includes an input node adapted to receive an alternating current (ac) signal having an instantaneous voltage oscillating between a minimum voltage and a maximum voltage. The system includes a pass transistor having a voltage controlled terminal, a first transfer terminal, and a second transfer terminal. The ...
NEW Semiconductor device and system
Samsung Electronics Co., Ltd.
May 17, 2018 - N°20180138806

A semiconductor device includes an inductor selectively connected to a power supply voltage and configured to store and release energy; a first transistor connected between the power supply voltage and the inductor and configured to provide the power supply voltage to the inductor; a second transistor connected to the first transistor in series, connected between the inductor and a ground ...
NEW Dc-dc converter for controlling an aircraft fan inverter, and associated control method and fan
Safran Electrical & Power
May 17, 2018 - N°20180138800

The invention relates to an electric dc-dc converter suitable for being supplied with power by a primary voltage source and for supplying control electronics of a three-phase inverter with power, said three-phase inverter being configured to control a fan of a ventilation system of an aircraft. The dc-dc converter is characterised in that it comprises a transformer (16), a primary circuit (12) ...
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NEW Light emitting element display device
Japan Display Inc.
May 17, 2018 - N°20180138258

A display device includes two or more transistors in one pixel, and the two or more transistors include a first transistor of which a channel semiconductor layer is polycrystalline silicon, and a second transistor of which a channel semiconductor layer is an oxide semiconductor.
NEW Low-noise cmos image sensor
May 17, 2018 - N°20180138226

Wherein the third transistor has a gate length and/or width smaller than those of the first and second transistors, wherein difference vddh-gnd is greater than the nominal voltage of the third mos transistor, and wherein the body or drain region of the third transistor is connected to a potential vl between potentials vddh and gnd.
NEW Logic semiconductor device
Korea University Research And Business Foundation
May 17, 2018 - N°20180138200

A semiconductor device includes stacked transistors. Each of the transistors includes a semiconductor column including a first conductive region of first conductivity type, a second conductive region of second conductivity type, an intrinsic region disposed between the first conductive region and the second conductive region, and a barrier region of the first conductivity type disposed between the intrinsic region and ...
NEW Conductive structures, wordlines and transistors
Micron Technology, Inc.
May 17, 2018 - N°20180138182

Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4. 5 ev, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4. 5 ev, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material ...
NEW Semiconductor field effect transistors and manufacturing method thereof
Taiwan Semiconductor Manufacturing Co., Ltd.
May 17, 2018 - N°20180138168

A semiconductor device includes a substrate, source/drain contacts, gate structures, conductive elements, and a first stop layer. The substrate has source/drain regions formed therein. The source/drain contacts are over the substrate and each of the source/drain contacts is electrically connected to the respective source/drain region. The gate structures are arranged in parallel on the substrate. ...
NEW Power field-effect transistor (fet), pre-driver, controller, and sense resistor integration for multi-phase power applications
Texas Instruments Incorporated
May 17, 2018 - N°20180138112

Techniques are described for integrating power field-effect transistors (fets), pre-drivers, controllers, and/or resistors into a common multi-chip package for implementing multi-phase bridge circuits. The techniques may provide a multi-chip package with at least two high-side (hs) fets and at least two low-side (ls) fets, and place the at least two hs fets or the at least ls fets on ...
NEW Method and structure to control channel length in vertical fet device
Globalfoundries Inc.
May 17, 2018 - N°20180138046

A method of manufacturing a vertical field effect transistor includes an isotropic etch of a gate conductor to recess the gate and define the length of the transistor channel. A symmetric gate conductor geometry prior to the etch, in combination with the isotropic (i. E., lateral) etch, allows the effective vertical etch rate of the gate conductor to be independent ...
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Transistors Patent Applications
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  • 1475+ full patent PDF documents of Transistors-related inventions.
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NEW Display panel and manufacturing method thereof
Century Technology (shenzhen) Corporation Limited
May 17, 2018 - N°20180136525

A display panel includes a substrate, a plurality of thin film transistors (tfts), a plurality common electrodes, a plurality of common electrode lines, a plurality of coupling electrodes, and a plurality of pixel electrodes. Each of the tfts comprises a gate, a source, a drain and a channel layer coupling the source to the drain. The gate, the common electrodes, ...
NEW Gate driver on array circuit based on low temperature poly-silicon semiconductor thin film transistor
Wuhan China Star Optoelectronics Technology Co., Ltd.
May 17, 2018 - N°20180136500

The present disclosure proposes a goa circuit based on ltps tfts. A ninth tft is introduced to adjust the high and low voltage levels imposed on the second node p(n). The ninth tft includes a gate and a source both electrically connected to the second node p(n) and a drain electrically connected to a second clock signal. Such ...
Printing complex electronic circuits using a printable solution defined by a patterned hydrophobic layer
Nthdegree Technologies Worldwide Inc.
May 10, 2018 - N°20180132347

A programmable circuit includes an array of printed groups of microscopic transistors or diodes. The devices are pre-formed and printed as an ink and cured. A patterned hydrophobic layer defines the locations of the printed dots of the devices. The devices in each group are connected in parallel so that each group acts as a single device. Each group has ...
Manifolded gate resistance network
Skyworks Solutions, Inc.
May 10, 2018 - N°20180131369

A radio-frequency switch includes a pole node, a throw node connected to the pole node via a radio-frequency signal path, the radio-frequency signal path including first, second, third and fourth field-effect transistors connected in series, each of the first, second, third and fourth field-effect transistors having a gate, a first coupling path coupling the gate of the first field-effect transistor ...
Differential output circuit
Panasonic Intellectual Property Management Co., Ltd.
May 10, 2018 - N°20180131363

A differential output circuit includes: input transistors that receive differential input signals; n stages of cascode transistors (n≥2) cascode connected to the input transistors; output terminals connected to the drains of n-th stage cascode transistors; an intermediate potential generating circuit that supplies an intermediate potential of potentials of the output terminals to the gates of the n-th stage cascode ...
Fast settling peak detector
Qualcomm Incorporated
May 10, 2018 - N°20180131356

The present disclosure describes aspects of a fast settling peak detector. In some aspects, a peak detector circuit includes a first transistor having a gate coupled to an input of the circuit at which a signal is received and a drain coupled to a source of a second transistor. Current may flow in the first and second transistors responsive to ...
High efficiency voltage mode class d topology
Efficient Power Conversion Corporation
May 10, 2018 - N°20180131335

A high efficiency voltage mode class d amplifier and energy transfer system is provided. The amplifier and system includes a pair of transistors connected in series between a voltage source and a ground connection. Further, a ramp current tank circuit is coupled in parallel with one of the pair of transistors and a resonant tuned load circuit is coupled to ...
Wireless receiver
Taiwan Semiconductor Manufacturing Co., Ltd.
May 10, 2018 - N°20180131332

A low noise amplifier (lna) includes a pair of n-type transistors, each configured to provide a first trans conductance; a pair of p-type transistors, each configured to provide a second transconductance; a first pair of coupling capacitors, cross-coupled between the pair of n-type transistors, and configured to provide a first boosting coefficient to the first transconductance; and a second pair ...
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