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Transistors patents



      
           
This page is updated frequently with new Transistors-related patent applications. Subscribe to the Transistors RSS feed to automatically get the update: related Transistors RSS feeds. RSS updates for this page: Transistors RSS RSS


3dic system with a two stable state memory

Monolithic 3d

3dic system with a two stable state memory

Gate length independent silicon-on-nothing (son) scheme for bulk finfets

Globalfoundries

Gate length independent silicon-on-nothing (son) scheme for bulk finfets

Gate length independent silicon-on-nothing (son) scheme for bulk finfets

Apple

Liquid crystal displays with oxide-based thin-film transistors

Date/App# patent app List of recent Transistors-related patents
02/26/15
20150059008
 Undiscoverable physical chip identification patent thumbnailnew patent Undiscoverable physical chip identification
Methods and circuits for undiscoverable physical chip identification are disclosed. Embodiments of the present invention provide an intrinsic bit element that comprises two transistors.
International Business Machines Corporation
02/26/15
20150058698
 Data recovery from blocks with gate shorts patent thumbnailnew patent Data recovery from blocks with gate shorts
A storage module may include a nand-type flash memory array and one or more controllers configured to increase gate bias voltage levels applied to gates in the memory array to overcome possible gate shorts and recover data identified as being uncorrectable. The increased gate bias voltages may be applied to gates of a single type of transistor or to different types of transistors in the memory array, including drain select transistors, source select transistors, or floating gate transistors..
02/26/15
20150058653
 Integrated circuit power measurement and adaptation patent thumbnailnew patent Integrated circuit power measurement and adaptation
An integrated circuit (e.g., a system application processor ic) includes power supply lines that include a section having a known resistance. Measurement connections across the section are also present.
Broadcom Corporation
02/26/15
20150056935
 Current output circuit and wireless communication apparatus patent thumbnailnew patent Current output circuit and wireless communication apparatus
A current output circuit includes a current mirror circuit that has first and second transistors in each of which a source is connected to a reference voltage, and that outputs a current which is proportional to a drain current of the first transistor, from a drain of the second transistor; a switch that turns on/off the current output of the current mirror circuit; a third transistor in which a gate is connected to a gate of the second transistor; and a bias circuit that applies a first voltage to a drain of the third transistor. The bias circuit switches the first voltage to two different voltages in synchronization with opening/closing of the switch..
Panasonic Corporation
02/26/15
20150056823
 Laser processing method and laser processing apparatus patent thumbnailnew patent Laser processing method and laser processing apparatus
A display device is manufactured by forming a semiconductor film over a substrate and irradiating the film with laser light. The laser light is generated from an oscillator, passes through an attenuator that includes a filter, and passes through an optical system after passing through the attenuator.
Semiconductor Energy Laboratory Co., Ltd.
02/26/15
20150056781
 Gate length independent silicon-on-nothing (son) scheme for bulk finfets patent thumbnailnew patent Gate length independent silicon-on-nothing (son) scheme for bulk finfets
Methods for fabricating integrated circuits and finfet transistors on bulk substrates with active channel regions isolated from the substrate with an insulator are provided. In accordance with an exemplary embodiment, a method for fabricating an integrated circuit includes forming fin structures overlying a semiconductor substrate, wherein each fin structure includes a channel material and extends in a longitudinal direction from a first end to a second end.
Globalfoundries, Inc.
02/26/15
20150056767
 Methods for forming transistors patent thumbnailnew patent Methods for forming transistors
A hybrid transistor is produced to have a substrate with a first (e.g., p type) well region and a second (e.g., n type) well region with an np or pn junction therebetween. A mos portion of the hybrid transistor has an (e.g., n type) source region in the first well region and a gate conductor overlying and insulated from the well regions.
02/26/15
20150056746
 Diketopyrrolopyrrole polymers for use in organic field effect transistors patent thumbnailnew patent Diketopyrrolopyrrole polymers for use in organic field effect transistors
The present invention relates to polymers comprising a repeating unit of the formula i, or iii and their use as organic semiconductor in organic devices, especially an organic field effect transistor (ofet), or a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties.
Basf Se
02/26/15
20150055805
 Multiple level charge pump generating voltages with distinct levels and associated methods patent thumbnailnew patent Multiple level charge pump generating voltages with distinct levels and associated methods
A multi level charge pump circuit may be associated with at least two power supplies, and may provide at least four levels of positive and negative voltage. The multi level charge pump may include first and second fly capacitors, and first and second tank capacitors.
Stmicroelectronics International N.v.
02/26/15
20150055761
 Temperature compensation for thin film transistors in digital x-ray detectors patent thumbnailnew patent Temperature compensation for thin film transistors in digital x-ray detectors
A digital radiographic detector uses predetermined calibration information corresponding to a first operating temperature of the detector. The calibration data is accessible by the detector to compensate a radiographic image captured by the detector at a second operating temperature different than the first operating temperature.
Carestream Health, Inc.
02/26/15
20150055426
new patent

Novel sense amplifier scheme


A sense amplifier circuit comprising a pair of cross-coupled inverters and a data line charging circuit is disclosed. The cross-coupled inverters comprise a first inverter and a second inverter.
Taiwan Semiconductor Manufacturing Company Limited
02/26/15
20150055396
new patent

Resistance change memory


According to one embodiment, a resistance change memory includes a first memory cell, a word line, a first bit line, first and second inverters, first to sixth mos transistors, and a control circuit. The first transistor is connected to the first output terminal of the first inverter.
02/26/15
20150055394
new patent

Semiconductor device


A semiconductor device comprises a semiconductor substrate including first and second regions that have different conductivity types from each other; an isolation region extending continuously over the first and second regions and having a shallow trench covered by a field insulator; first and second active regions placed in respective first and second regions and being each surrounded by the isolation region; a gate electrode disposed in a lower portion of a gate groove that extends continuously from the first active region to the second active region via the isolation region, the gate groove being shallower than the shallow trench; a cap insulating film disposed in an upper portion of the gate groove so as to cover an upper surface of the gate electrode; first and second transistors placed in respective first and second active regions and sharing the gate electrode; and a logic circuit including the first and second transistors connected in series.. .
Micron Technology, Inc.
02/26/15
20150055051
new patent

Displays with silicon and semiconducting oxide thin-film transistors


An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display.
Apple Inc.
02/26/15
20150055050
new patent

Liquid crystal display device and electronic device


To provide a circuit used for a shift register or the like. The basic configuration includes first to fourth transistors and four wirings.
Semiconductor Energy Laboratory Co., Ltd.
02/26/15
20150055047
new patent

Liquid crystal displays with oxide-based thin-film transistors


An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display.
Apple Inc.
02/26/15
20150054998
new patent

Solid-state imaging apparatus


A solid-state imaging apparatus includes a plurality of pixels arranged in an array, each including a photoelectric converter and a transfer transistor, a driving circuit configured to supply a control signal to the transfer transistor of each of the plurality of pixels, and a plurality of driving lines connecting the transfer transistors of the plurality of pixels and the driving circuit. The plurality of pixels include a first pixel and a second pixel connected to the same driving line.
Canon Kabushiki Kaisha
02/26/15
20150054802
new patent

Buffer circuit, scanning circuit, display device, and electronic equipment


A buffer circuit includes a first transistor circuit having a first conductivity type transistor, a second transistor circuit having a second conductivity type transistors, in which the first and second transistor circuits are serially connected between a first fixed power supply and a second fixed power supply, and input terminals and output terminals of each of the first and second transistor circuits are connected in common respectively, in which at least one transistor circuit of the first transistor circuit and the second transistor circuit is a double gate transistor, and in which wherein a switch element, when any one transistor circuit of the first and the second transistor circuits is in an operating state, is included to supply a voltage of a third fixed power supply to a common connection node of the double gate transistor of the other transistor circuit.. .
Sony Corporation
02/26/15
20150054799
new patent

Display driver circuitry for liquid crystal displays with semiconducting-oxide thin-film transistors


An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display.
Apple Inc.
02/26/15
20150054576
new patent

Apparatus and methods for chopper amplifiers


Apparatus and methods for chopper amplifiers are provided herein. In certain configurations, a chopper amplifier includes at least one differential transistor bank including a selection circuit and a plurality of transistors.
Analog Devices, Inc.
02/26/15
20150054572
new patent

Charge pump generator with direct voltage sensor


A method for operating a charge pump that supplies switching current for a plurality of transistors includes a capacitor generating a pumped voltage. A comparator generates a pump control signal for turning on and off charging of the pump capacitor based on a difference between a comparison voltage and a reference voltage.
International Business Machines Corporation
02/26/15
20150054571
new patent

Charge pump circuit and semiconductor device including the same


Efficiency of a charge pump circuit is increased. The charge pump circuit includes serially connected fundamental circuits each including a diode-connected transistor and a capacitor.
Semiconductor Energy Laboratory Co., Ltd.
02/26/15
20150054568
new patent

Layout construction for addressing electromigration


A cmos device with a plurality of pmos transistors each having a pmos drain and a plurality of nmos transistors each having an nmos drain includes a first interconnect on an interconnect level extending in a length direction to connect the pmos drains together. A second interconnect on the interconnect level extends in the length direction to connect the nmos drains together.
Qualcomm Incorporated
02/26/15
20150054561
new patent

Semiconductor device and cascading matched frequency window tuned lc tank buffers


A tunable buffer circuit has a first tunable buffer cell receiving an input signal. A first transmission line is coupled to the first tunable buffer cell.
Semtech Corporation
02/26/15
20150054552
new patent

Systems, circuits, devices, and methods with bidirectional bipolar transistors


Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (btrans) for switching. Four-terminal three-layer btrans provide substantially identical operation in either direction with forward voltages of less than a diode drop.
Ideal Power, Inc.
02/26/15
20150054548
new patent

Semiconductor device and manufacturing semiconductor device


A manufacturing method of a semiconductor device in which the threshold is adjusted is provided. In a semiconductor device including a plurality of transistors arranged in a matrix each including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and a charge trap layer between the gate electrode and the semiconductor, electrons are trapped in the charge trap layer by performing heat treatment and, simultaneously, keeping a potential of the gate electrode higher than that of the source or drain electrode for 1 second or more.
Semiconductor Energy Laboratory Co., Ltd.
02/26/15
20150054493
new patent

Charge pump generator with direct voltage sensor


Embodiments relate to a direct voltage sensor and a charge pump system for a computer system. A charge pump that supplies switching current for a plurality of transistors includes a capacitor generating a pumped voltage.
International Business Machines Corporation
02/26/15
20150054440
new patent

Method for making a motor quieter


The method is for making a brushless direct-current (dc) motor quieter. A predetermined high frequency pulse width modulated (pwm) signal is generated.
Ld Design Electronics Ab
02/26/15
20150054117
new patent

Semiconductor devices with guard rings


Semiconductor devices with guard rings are described. The semiconductor devices may be, e.g., transistors and diodes designed for high-voltage applications.
Transphorm Inc.
02/26/15
20150054090
new patent

3dic system with a two stable state memory


A 3d ic based system, including: a first layer including first transistors; a second layer overlying the first layer, the second layer includes a plurality of second transistors, where the second layer includes at least one through second layer via having a diameter of less than 400 nm, and where at least one of the plurality of second transistors forms a two stable state memory cell including a back-bias region.. .
Monolithic 3d Inc.
02/26/15
20150054066
new patent

Semiconductor devices including vertical transistors, electronic systems including the same and methods of manufacturing the same


The semiconductor device includes word lines on a semiconductor substrate, common gates connected to each of the word lines and vertically disposed in the semiconductor substrate, buried bit lines intersecting the word lines at a non-right angle in a plan view, and a pair of vertical transistors sharing each of the common gates. The pair of vertical transistors is disposed on both sides of one of the word lines.
Sk Hynix Inc.
02/26/15
20150054043
new patent

Simple and cost-free mtp structure


Non-volatile (nv) multi-time programmable (mtp) memory cells are presented. The memory cell includes a substrate and first and second wells in the substrate.
Globalfoundries Singapore Pte. Ltd.
02/26/15
20150054042
new patent

Photodiode of high quantum efficiency


A photodiode includes at least one central pad arranged on a light-receiving surface of a photodiode semiconductor substrate. The pad is made of a first material and includes lateral sidewalls surrounded by a spacer made of a second material having a different optical index than the first material.
Commissariat A L'energie Atomique Et Aux Energies Alternatives
02/26/15
20150054031
new patent

Tin doped iii-v material contacts


Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be implemented, for example, using a metal contact such as one or more metals/alloys on silicon or silicon germanium (sige) source/drain regions.
Intel Corporation
02/26/15
20150054030
new patent

Defect-free sige source/drain formation by epitaxy-free process


Mosfet transistors having localized stressors for improving carrier mobility are provided. Embodiments of the invention comprise a gate electrode formed over a substrate, a carrier channel region in the substrate under the gate electrode, and source/drain regions on either side of the carrier channel region.
Taiwan Semiconductor Manufacturing Company, Ltd.
02/26/15
20150054027
new patent

Passive devices for finfet integrated circuit technologies


Device structures and design structures for passive devices that may be used as electrostatic discharge protection devices in fin-type field-effect transistor integrated circuit technologies. A device region is formed in a trench and is coupled with a handle wafer of a semiconductor-on-insulator substrate.
International Business Machines Corporation
02/26/15
20150053982
new patent

Heterojunction bipolar transistors with reduced parasitic capacitance


Fabrication methods, device structures, and design structures for a heterojunction bipolar transistor. A trench isolation region and a collector are formed in a semiconductor substrate.
International Business Machines Corporation
02/26/15
20150053976
new patent

Display device and manufacturing the same


With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. The increase in the numbers of gate lines and signal lines makes it difficult to mount an ic chip having a driver circuit for driving the gate line and the signal line by bonding or the like, which causes an increase in manufacturing costs.
Semiconductor Energy Laboratory Co., Ltd.
02/26/15
20150053955
new patent

Organic el display device


An organic el display device includes: thin film transistors that are arranged in respective pixels within a display area which are arranged in a matrix; a planarization film that is formed over the thin film transistor and made of an organic insulating material; contact electrodes that are connected to drains or sources of the respective thin film transistors through contact holes formed within the planarization film; contact hole planarization films that are arranged over the respective contact electrodes with which the contact holes are embedded, and made of an organic insulating material; a lower electrode that is formed to be electrically connected onto the contact electrodes, and formed over the contact hole planarization film; and an organic layer that is arranged over the lower electrode to cover the overall display area, and formed of a plurality of organic material layers including a light emitting layer.. .
Japan Display Inc.
02/26/15
20150053935
new patent

Organic light-emitting diode displays with semiconducting-oxide and silicon thin-film transistors


An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display.
Apple Inc.
02/26/15
20150053928
new patent

Silicon and silicon germanium nanowire formation


Among other things, one or semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. For example, one or more silicon and silicon germanium stacks are utilized to form pmos transistors comprising germanium nanowire channels and nmos transistors comprising silicon nanowire channels.
Taiwan Semiconductor Manufacturing Company Limited
02/26/15
20150053927
new patent

Stretchable transistors with buckled carbon nanotube films as conducting channels


Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors.
Wisconsin Alumni Research Foundation
02/26/15
20150053360
new patent

Process for using and producing paper based on natural cellulose fibers, synthetic fibers or mixed fibers as physical support and storing medium for electrical charges in self-sustaining field-effect transistors with memory using active semiconductor oxides


The present invention refers to the use and creation of materials based on natural cellulose fibbers, synthetic fibbers, or mixed fibbers as physical support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semiconductors for the manufacture of the channel regions that are deposited on the fibbers of the paper material as well as metals or passive semiconductors for manufacturing drain and source allowing the interconnection of fibbers, in addition to the gate electrode contact existing on the other side-face of the paper, p or n type respectively, in monolithic or hybrid forms.. .
02/19/15
20150051398

Process for the preparation of tetracarboxynaphthalenediimide compounds disubstituted with heteroaryl groups


A process for the preparation of a tetracarboxynaphthalenediimide compound disubstituted with heteroaryl groups having general formula (i), comprising the reaction of at least one disubstituted n,ni-dialkyl-1,4,5,8-tetracarboxynaphthalenediimide with at least one heteroaryl compound. Said tetracarboxynaphthalenediimide compound disubstituted with heteroaryl groups can be advantageously used as monomer in the synthesis of semiconductor polymers which can be advantageously used in the construction of organic field effect transistors (ofet) or of organic thin film transistors (otft)..
Eni S.p.a.
02/19/15
20150050787

Fully silicided gate formed according to the gate-first hkmg approach


When forming field-effect transistors, a common problem is the formation of a schottky barrier at the interface between a metal thin film in the gate electrode and a semiconductor material, typically polysilicon, formed thereupon. Fully silicided gates are known in the state of the art, which may overcome this problem.
Globalfoundries Inc.
02/19/15
20150049541

Semiconductor memory device


When threshold voltages of constituent transistors are reduced in order to operate an sram circuit at a low voltage, there is a problem in that a leakage current of the transistors is increased and, as a result, electric power consumption when the sram circuit is not operated while storing data is increased. Therefore, there is provided a technique for reducing the leakage current of mos transistors in sram memory cells mc by controlling a potential of a source line ssl of the driver mos transistors in the memory cells..
Renesas Electronics Corporation
02/19/15
20150049514

Power converter circuits including high electron mobility transistors for switching and rectification


A power converter circuit includes a storage component, a rectifier component comprising a first field effect transistor and having first and second bias states, and a switch including a second field effect transistor having first and second operational states. The first and second field effect transistors are high electron mobility transistors (hemts)..
Cree, Inc.
02/19/15
20150049125

Pixel, pixel driving method, and display device including the pixel


A pixel includes a switching transistor connected to a data line, a first circuit to control compensation of a first driving transistor, and a second circuit to control compensation of a second driving transistor. The first and second circuits are connected to the switching transistor.
Samsung Display Co., Ltd.
02/19/15
20150049077

Level shift circuit with automatic timing control of charging transistors, and driver circuit having the same


A level shift circuit includes first and second nmos transistors that are coupled between a first supply terminal, and first and second output nodes, respectively, and have respective control terminals receiving input signals of a low amplitude, third and fourth pmos transistors which are coupled between a second supply terminal, and the first and second output nodes outputting signals of high amplitude, respectively, a fifth pmos transistor which is coupled between a gate of the third pmos transistor and the second output node, and has a gate coupled to the first output node, a sixth pmos transistor which is coupled between a gate of the fourth pmos transistor and the first output node, and has a gate coupled to the second output node, and first and second load elements which are coupled between the second supply terminal and the gates of the third and fourth pmos transistors, respectively.. .
Renesas Electronics Corporation
02/19/15
20150049050

Touch display apparatus and driving method thereof


Provided a touch display apparatus and a driving method thereof, and the touch display apparatus comprising: a plurality of gate lines, a plurality of data lines, pixel electrodes and thin film transistors, wherein the touch display apparatus further includes a plurality of first common electrodes, the plurality of first common electrodes are disposed to be intersected and insulated with the plurality of data lines, and are used for receiving a touch detection driving signal to form touch driving electrodes at a first moment, and for receiving a display driving signal at a second moment; the plurality of data lines are combined as sensing electrodes so as to form a mutual-capacitance structure with the touch driving electrodes, at the first moment; and the pixel electrode is used for receiving a pixel signal so as to display in cooperation with the first common electrodes, at the second moment.. .
Boe Technology Group Co., Ltd.
02/19/15
20150048818

Integrated fluxgate magnetic sensor and excitation circuitry


Improved magnetic sensor excitation circuitry is presented for providing a periodic bidirectional excitation waveform to a fluxgate magnetic sensor excitation coil using a bridge circuit connected to the excitation coil and having lower transistors for switched selective connection to a current mirror input transistor to mirror a current provided by pulsed current source, and with integrated filtering to control pulse rise times and slew rate.. .
Texas Instruments Deutschland Gmbh
02/19/15
20150048503

Packages with interposers and methods for forming the same


A package structure includes an interposer, a die over and bonded to the interposer, and a printed circuit board (pcb) underlying and bonded to the interposer. The interposer is free from transistors therein (add transistor), and includes a semiconductor substrate, an interconnect structure over the semiconductor substrate, through-vias in the silicon substrate, and redistribution lines on a backside of the silicon substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.
02/19/15
20150048478

Trench isolation for bipolar junction transistors in bicmos technology


Device structures and design structures for a bipolar junction transistor. A first isolation structure is formed in a substrate to define a boundary for a device region.
International Business Machines Corporation
02/19/15
20150048472

Multi-pixel avalanche photodiode


Semiconductor avalanche photo transistors and methods of manufacturing the same, operable for internal amplification of a photo signal and for use in detection of weak light signals, gamma rays and nuclear particles. The multi-pixel avalanche photo transistor devices can comprise a semiconductor layer, a plurality of semiconductor areas (pixels) forming a p-n-junction with the semiconductor layer, a common conductive grid separated from the semiconductor layer by a dielectric layer and individual micro-resistors connected said semiconductor areas with the common conductive grid.
Zecotek Photonics Inc.
02/19/15
20150048455

Self-aligned gate contact structure


Embodiments of present invention provide a method of forming a semiconductor device. The method includes depositing a layer of metal over one or more channel regions of respective one or more transistors in a substrate, the layer of metal having a first region and a second region; lowering height of the first region of the layer of metal; forming an insulating layer over the first region of lowered height, the insulating layer being formed to have a top surface coplanar with the second region of the layer of metal; and forming at least one contact to a source/drain region of the one or more transistors.
International Business Machines Corporation
02/19/15
20150048434

Structure and manufacturing a stacked memory array for junction-free cell transistors


A three-dimensional nand memory device and an associated method for manufacturing this device are provided. The three-dimensional nand memory device includes a source contact electrically isolated from a conductive gate material.
Conversant Intellectual Property Management Inc
02/19/15
20150048425

Gate array architecture with multiple programmable regions


An integrated circuit includes a gate array layer having a two-dimensional array of logic gates, each logic gate including multiple transistors. At least one upper template-based metal layer is coupled to the gate array layer and is configured to define at least one of a power distribution network, a clock network and a global signal network.
Baysand Inc.
02/19/15
20150048421

High electron mobility transistors, methods of manufacturing the same, and electronic devices including the same


Provided are high electron mobility transistors (hemts), methods of manufacturing the hemts, and electronic devices including the hemts. An hemt may include an impurity containing layer, a partial region of which is selectively activated.
Samsung Electronics Co., Ltd.
02/19/15
20150048376

Semiconductor device, and display device and electronic device utilizing the same


A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning off a diode-connected transistor 101, the gate terminal of a first transistor 102 is brought into a floating state.
Semiconductor Energy Laboratory Co., Ltd.
02/19/15
20150048322

Organic light emitting diode display


Oled display that includes: a substrate; a plurality of thin film transistors formed on the substrate; a plurality of first electrodes respectively connected to the thin film transistors; a pixel definition layer formed on the substrate and having a first opening, a second opening, and a third opening respectively exposing first, second, and third first electrodes of the plurality of first electrodes; an emission layer formed at the first opening, the second opening, and the third opening; and a second electrode formed on the emission layer, wherein the first opening has a first pair of boundary lines facing each other and a second pair of boundary lines facing each other, and the first pair of boundary lines overlap boundary lines of a pair of boundary lines of the first first electrode or are positioned outside the boundary lines of the pair of boundary lines of the first first electrode.. .
Samsung Display Co., Ltd.
02/19/15
20150048241

Sensor pixels, arrays and array systems and methods therefor


One sensor pixel includes amplifying transistor, coupled between first bias line and data line; switch transistor, operated by control line and coupled between data line and gate of amplifying transistor; storage capacitor, coupled to second bias line; and sensor being coupled to gate of amplifying transistor. Another sensor pixel includes first amplifying transistor coupled between first bias line and data line; second amplifying transistor being coupled between second bias line and data line; switch transistor being operated by control line and being coupled between data line and gates of first and second amplifying transistors; storage capacitor coupled to gates of first and second amplifying transistors; and sensor coupled to gates of first and second amplifying transistors.
02/12/15
20150044861

Gate silicidation


A method for performing silicidation of gate electrodes includes providing a semiconductor device having first and second transistors with first and second gate electrodes formed on a semiconductor substrate, forming an oxide layer on the first and second gate electrodes and the semiconductor substrate, forming a cover layer on the oxide layer, and back etching the cover layer to expose portions of the oxide layer above the first and second gate electrodes while maintaining a portion of the cover layer between the first and second gate electrodes. Furthermore, the exposed portions of the oxide layer are removed from the first and second gate electrodes to expose upper portions of the first and second gate electrodes, while maintaining a portion of the oxide layer between the first and second gate electrodes, and a silicidation of the exposed upper portions of the first and second gate electrodes is performed..
Globalfoundries Inc.
02/12/15
20150044842

Integrating junction formation of transistors with contact formation


A method includes forming a gate stack over a semiconductor region, depositing an impurity layer over the semiconductor region, and depositing a metal layer over the impurity layer. An annealing is then performed, wherein the elements in the impurity layer are diffused into a portion of the semiconductor region by the annealing to form a source/drain region, and wherein the metal layer reacts with a surface layer of the portion of the semiconductor region to form a source/drain silicide region over the source/drain region..
Taiwan Semiconductor Manufacturing Company, Ltd.
02/12/15
20150044838

Gate depletion drain extended mos transistor


A drain extended mos transistor configured to operate in a gate-depletion regime. Devices comprising such transistors are described together with fabrication processes for such devices and transistors..
Cambridge Silicon Radio Limited
02/12/15
20150044834

Transistors, semiconductor constructions, and methods of forming semiconductor constructions


Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second segment of the channel region. The second electrically conductive gate portion is a different composition than the first electrically conductive gate portion.
Micron Technology, Inc.
02/12/15
20150044521

Battery cell with discretion to drive loads within battery stack


Embodiments of the present invention are directed to improved battery packaging designs. The battery pack design may include a battery cell, a plurality of transistors, and a controller.
Analog Devices, Inc.
02/12/15
20150044515

Battery pack with locally controlled disconnect safeguards


Embodiments of the present invention are directed to an improved battery packaging design. The battery pack design may include a battery cell, a plurality of transistors, and a controller.
Analog Devices, Inc.
02/12/15
20150043265

N-well switching circuit


A thin gate-oxide dual-mode pmos transistor is disclosed that has a first mode of operation in which a switched n-well for the dual-mode pmos transistor is biased to a high voltage. The dual-mode pmos transistor has a second mode of operation in which the switched n-well is biased to a low voltage that is lower than the high voltage.
Qualcomm Incorporated
02/12/15
20150043113

Esd clamp circuit


Esd clamp circuit is provided, including an rc circuit, a first transistor, a second transistor, an esd conduction unit and an inverter. The first transistor has a gate and a drain respectively coupled to the rc circuit and a control terminal of the esd conduction unit.
Global Unichip Corporation
02/12/15
20150042916

Pixel array and liquid crystal display device


A pixel array includes: pixel units, data lines quantitatively corresponding to the number of columns n of the pixel units, and scan lines quantitatively corresponding to the number of rows of the pixel units, wherein transistors in the pixel units are arranged in the same direction; the pixel units in the same row are connected to the same scan line; the pixel units in each column and in odd rows are connected respectively to corresponding one of the data lines; the pixel units in each column and in even rows are connected respectively to corresponding one of the data lines; and the pixel units in the nth column and in even rows and the pixel units in the n+1 th column and in odd rows are connected to the same data line, where n=1, 2, . .
Tianma Micro-electronics Co., Ltd.
02/12/15
20150042913

Flexible display having damage impeding layer and manufacturing the same


A flexible display includes a flexible base substrate, a thin film transistors layer formed on the flexible base substrate, and a light emitting elements layer formed on the thin film transistors layer, where the flexible base substrate includes a first support layer formed below the thin film transistors layer, a second support layer disposed below the first support layer, and a heat-energy blocking/reflecting layer provided between the first support layer and the second support layer. The heat-energy blocking/reflecting layer is configured to block or reflect a sufficient portion of radiated heat-energy that is generated when the flexible base substrate is separated from a supporting carrier substrate so as to prevent the damage from the radiated heat-energy to the light emitting elements layer..
Samsung Display Co., Ltd.
02/12/15
20150042855

Image sensor, operating the same, and system including the image sensor


An image sensor includes a pixel array having a plurality of layers and a control unit. Each of the plurality of layers including pixels having a photoelectric conversion element and a transmission transistor therein.
Samsung Electronics Co., Ltd.
02/12/15
20150042725

Inkjet print head, manufacturing the same and drawing apparatus equipped with the same


Provided are a manufacturing method of an inkjet print head, the inkjet print head and a drawing apparatus equipped with the inkjet print head. The manufacturing method includes: forming a separation assisting layer on a substrate; forming heating resistors, thin-film transistors and nozzles for ejecting liquid, on the separation assisting layer; separating the separation assisting layer from the substrate; forming a first heat-conductive layer on the opposite surface of the separation assisting layer from the nozzles; and forming an ink supply port for supplying ink to the nozzles from a first heat-conductive layer side of the inkjet print head..
Nlt Technologies, Ltd.
02/12/15
20150042396

Level shifter


A level shifter includes high breakdown voltage first and second pmos transistors, high breakdown voltage first and second depression nmos transistors having gates respectively supplied with first and second control signals, low breakdown voltage first and second nmos transistors having gates respectively supplied with third and fourth control signals, and a timing control unit that generates the first control signal and the third control signal different from the first control signal corresponding to an inverted signal of an input signal, and generates the second control signal and the fourth control signal different from the second control signal corresponding to a non-inverted signal of the input signal.. .
Renesas Electronics Corporation
02/12/15
20150042384

Packaged power transistors and power packages


A power package is provided comprising a packaged transistor and a driving unit connected to the transistor and adapted to drive the transistor. A control terminal of the transistor is connected to a middle terminal pin of the housing of the transistor and outer terminal pins of the housing are connected to the driving unit and to a voltage level, respectively, wherein the connections are crossing free..
Infineon Technologies Ag
02/12/15
20150042381

Eprom cell


The present invention relates to a register cell comprising one output node, at least two power supply nodes, and a first flash transistor and a second flash transistor, wherein the register cell is configured so that the output node can be driven by at least one of the power supply nodes as a function of the value stored in at least one of the flash transistors. The invention further relates to an fpga comprising the register cell..
Soitec
02/12/15
20150042372

Addressable test circuit and test key parameters of transistors


Methods of testing key parameters of transistors can be achieved using an addressable test circuit. Saturation current and leakage current of transistor are measured through different test signal lines.
Semitronix Corporation
02/12/15
20150042232

Level shifter circuit, scanning circuit, display device and electronic equipment


A level shifter circuit, wherein a first and a second transistor circuit are connected serially, a third and a fourth transistor circuit are connected serially; a first input voltage is applied to the second transistor circuit and a second input voltage is applied to the fourth transistor circuit; an input terminal of the first transistor circuit is connected to an output terminal of the third and the fourth transistor circuits, and an input terminal of the third transistor circuit is connected to an output terminal of the first and the second transistor circuits; two transistor circuits of at least one side of two transistor circuits of a first fixed power source side and two transistor circuits of a second fixed power source side are configured of double gate transistors; and the level shifter circuit has a switch element for applying a voltage to a common connection node.. .
Sony Corporation


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Transistors topics: Transistors, Semiconductor, Semiconductor Device, Integrated Circuit, High Speed, Photodiode, Memory Effect, Silicon Nitride, Enhancement, Ion Implant, Ion Channel, Interrupted, Reference Voltage, Semiconductor Devices, Semiconductor Substrate

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