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Transistors patents



      

This page is updated frequently with new Transistors-related patent applications.




Date/App# patent app List of recent Transistors-related patents
05/19/16
20160143186 
 Heatpipe imbedded coldplate enhancing igbt heat spreading patent thumbnailnew patent Heatpipe imbedded coldplate enhancing igbt heat spreading
A cold plate for a power circuit is disclosed. The power circuit includes a plurality of transistors and each of the plurality of transistors includes a plurality of dies.
Caterpillar Inc.


05/19/16
20160142059 
 Differential odd integer divider patent thumbnailnew patent Differential odd integer divider
A differential odd integer divider provides low power and compact sub-harmonics of an applied square or sinusoidal clock signal with self-aligned 50% duty cycle. The odd integer divider circuit includes a set of low power delay cells connected in a ring fashion.
Texas Instruments Incorporated


05/19/16
20160142057 
 Compact logic evaluation gates using null convention patent thumbnailnew patent Compact logic evaluation gates using null convention
Compact logic evaluation gates are built using null convention logic (ncl) circuits. The inputs to a null convention circuit include a ncl true input and a ncl complement input.
Wave Semiconductor, Inc.


05/19/16
20160142056 
 Level shifter of driving circuit patent thumbnailnew patent Level shifter of driving circuit
A level shifter applied to a driving circuit of a display is disclosed. The level shifter at least includes a first stage of level shifting unit, a second stage of level shifting unit, and two third stage of level shifting units belonging to different power domains and used to perform boost conversion of voltage signals in different power domains.
Raydium Semiconductor Corporation


05/19/16
20160142051 
 Driver output with dynamic switching bias patent thumbnailnew patent Driver output with dynamic switching bias
A circuit of an output stage of a push-pull driver having dynamic biasing may include a stacked configuration of field effect transistors (pfets) having a first pfet, a second pfet, and a third pfet, whereby the first pfet is connected to a first supply voltage, the third pfet is connected to an output of a switchable voltage bias generator circuit, and the second pfet is electrically connected between the first pfet and the third pfet. A transmission gate may be connected to a second supply voltage, whereby the transmission gate electrically connects the second supply voltage to an electrical connection between the first pfet and the second pfet based on a first operating state for preventing a voltage breakdown condition associated with the stacked configuration of pfets.
International Business Machines Corporation


05/19/16
20160142019 
 Amplifying device and offset voltage correction method patent thumbnailnew patent Amplifying device and offset voltage correction method
An output voltage delay time caused by the relationship between offset voltage and input voltage is shortened. A single power supply amplifying device includes first and second amplifying units, a state detecting unit, and an offset voltage correcting unit.
Fuji Electric Co., Ltd.


05/19/16
20160142000 
 Motor vehicle patent thumbnailnew patent Motor vehicle
In the case where an on-fixation failure occurs in one of transistors of an inverter, a shutdown signal gsdwn or msdwn is output as on signal for a duration of adjusting time since switching of a fail signal gfinv or mfinv to on signal. After elapse of the adjustment time, the shutdown signal gsdwn or msdwn is switched to off signal.
Toyota Jidosha Kabushiki Kaisha


05/19/16
20160141864 
 Protection circuit patent thumbnailnew patent Protection circuit
A p-channel type mosfet and an n-channel type mosfet formed by a cmos process are connected in series. A high-voltage signal and a low-voltage signal are applied to the drain of one of transistors.
Canon Kabushiki Kaisha


05/19/16
20160141529 
 Method for producing an organic cmos circuit and organic cmos circuit protected against uv radiation patent thumbnailnew patent Method for producing an organic cmos circuit and organic cmos circuit protected against uv radiation
An organic cmos circuit including a substrate having an n-type organic transistor and a p-type organic transistor formed thereon, the transistors respectively including a layer of n-type semiconductor material and a layer of p-type semiconductor material. A surface of each of the semiconductor material layers, opposite to the substrate, is covered with an anti-ultraviolet layer made of electrically-insulating material absorbing and/or reflecting ultra-violet rays..
Commissariat A L'energie Atomique Et Aux Energies Alternatives


05/19/16
20160141427 
 Multi-channel field effect transistors using 2d-material patent thumbnailnew patent Multi-channel field effect transistors using 2d-material
A device includes a semiconductor substrate, a buried oxide over the substrate, a first transition metal dichalcogenide layer over the buried oxide, an insulator over the first transition metal dichalcogenide layer, and a second transition metal dichalcogenide layer over the insulator. A gate dielectric is over the second transition metal dichalcogenide layer, and a gate is over the gate dielectric..
National Taiwan University


05/19/16
20160141425 
new patent

Thin film transistor assembly, array substrate manufacturing the same, and display device


The present disclosure discloses a thin film transistor assembly, an array substrate and a method of manufacturing the same, and a display device including the array substrate. The array substrate includes a substrate; a plurality of thin film transistors formed on the substrate; and a plurality of light shielding layers, each of the light shielding layers being arranged between a source electrode and a drain electrode of the thin film transistor and configured to block light from the exterior from illuminating an active layer of the thin film transistor.
Boe Technology Group Co., Ltd.


05/19/16
20160141423 
new patent

Contacts for highly scaled transistors


A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (s/d) regions, a channel between the first and second s/d regions, a gate engaging the channel, and a contact feature connecting to the first s/d region.
Taiwan Semiconductor Manufacturing Company, Ltd.


05/19/16
20160141375 
new patent

Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems


Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage..
Ideal Power Inc.


05/19/16
20160141373 
new patent

Semiconductor devices including field effect transistors and methods of forming the same


A semiconductor device includes an active pattern provided on a substrate and a gate electrode crossing over the active pattern. The active pattern includes a first buffer pattern on the substrate, a channel pattern on the first buffer pattern, a doped pattern between the first buffer pattern and the channel pattern, and a second buffer pattern between the doped pattern and the channel pattern.

05/19/16
20160141366 
new patent

Field effect transistors and methods of forming same


Semiconductor devices and methods of forming the same are provided. A first gate stack is formed over a substrate, wherein the first gate stack comprises a first ferroelectric layer.
Taiwan Semiconductor Manufacturing Company, Ltd.


05/19/16
20160141362 
new patent

Output capacitance reduction in power transistors


Technologies are described for reduction of an output capacitance of a transistor. In some examples, spacing of source-to-drain metallization may be increased and a sealed air-gap may be employed in an elongated trench in the drain region to reduce a dielectric constant of a portion of the body region and thereby the output capacitance of the transistor.
Empire Technology Development Llc


05/19/16
20160141348 
new patent

Organic light-emitting diode display with enhanced aperture ratio


An organic light-emitting diode display may have an array of pixels. Each pixel may have an organic light-emitting diode with an anode and cathode.
Apple Inc.


05/19/16
20160141344 
new patent

Light-emitting element display device


A light-emitting element display device includes a substrate, one or a plurality of thin film transistors, a light-emitting element, a first electrode, and a second electrode. The substrate includes an insulating material.
Japan Display Inc.


05/19/16
20160141334 
new patent

Monolithic three dimensional memory arrays with staggered vertical bit line select transistors and methods therfor


A monolithic three-dimensional memory array is provided that includes a plurality of global bit lines disposed above a substrate, each global bit line having a long axis, a plurality of vertically-oriented bit lines disposed above the global bit lines, a plurality of word lines disposed above the global bit lines, a plurality of memory cells coupled between the vertically-oriented bit lines and the word lines, and a plurality of vertically-oriented bit line select transistors coupled between the vertically-oriented bit lines and the global bit lines, each vertically-oriented bit line select transistor comprising a width and a thickness. Vertically-oriented bit line select transistors disposed above adjacent global bit lines are offset from one another in a direction along the long axis of the global bit lines.
Sandisk 3d Llc


05/19/16
20160141319 
new patent

Solid state imaging device


A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion.
Sony Corporation


05/19/16
20160141304 
new patent

Method to match soi transistors using a local heater element


An integrated circuit with a matched transistor pair with a matching resistance heater coupled to each transistor of the matched transistor pair. A method for forming a matching resistance heater.
Texas Instruments Incorporated


05/19/16
20160141291 
new patent

Metal segments as landing pads and local interconnects in an ic device


Methods for utilizing metal segments of an additional metal layer as landing pads for vias and also as local interconnects between contacts in an ic device and resulting devices are disclosed. Embodiments include forming source/drain and gate contacts connected to transistors on a substrate in an integrated circuit device, each contact having an upper surface with a first area; forming metal segments in a plane at the upper surface of the contacts, each metal segment being in contact with one or more of the contacts and having a second area greater than the first area; and forming one or more vias between one or more of the metal segments and one or more first segments of a first metal layer..
Globalfoundries Inc.


05/19/16
20160141275 
new patent

Semiconductor power module using discrete semiconductor components


An electronic power module is disclosed. The module includes a baseplate and a plurality of internally isolated discrete electronic devices mounted to the baseplate such that their electrical leads are oriented away from the baseplate.
Littelfuse, Inc.


05/19/16
20160141274 
new patent

Novel semiconductor device and structure


An integrated circuit device, including: a base wafer including single crystal, the base wafer including a plurality of first transistors; at least one metal layer providing interconnection between the plurality of first transistors; a first wire structure constructed to provide power to a portion of the first transistors; a second layer of less than 2 micron thickness, the second layer including a plurality of second single crystal transistors, the second layer overlying the at least one metal layer; and a second wire structure constructed to provide power to a portion of the second transistors, where the second wire structure is isolated from the first wire structure to provide a different power voltage to the portion of the second transistors.. .
Monolithic 3d Inc.


05/19/16
20160141045 
new patent

Nonvolatile memory device, erase method thereof and memory system including the same


An erase method of a nonvolatile memory device including a plurality of cell strings on a substrate is provided. Each string includes a plurality of memory cells stacked in a direction perpendicular to the substrate, a ground select transistor between the memory cells and the substrate, and string select transistors between the memory cells and a bit line.

05/19/16
20160141039 
new patent

Non-volatile semiconductor memory device


A semiconductor memory device, which restrains a breakdown of a low-voltage transistor constructing a bit line selecting circuit, is provided. An nand string unit and transistors (blse, blso, biase, biaso) that construct bit line selecting circuit are formed in a p-well.
Winbond Electronics Corp.


05/19/16
20160141032 
new patent

Eeprom architecture wherein each bit is formed by two serially connected cells


An integrated circuit memory includes memory cells arranged in an array with rows and columns, each column including a first bit line and a second bit line. Each memory cell is formed by: a first select transistor with a first source-drain path; a second select transistor with a second source-drain path; a first floating gate transistor with a third source-drain path; and a second floating gate transistor with a fourth source-drain path.
Stmicroelectronics (rousset) Sas


05/19/16
20160141023 
new patent

Memory device


Disclosed is a memory device. The memory device includes a bit-cell comprising a cross-coupled inverter and pass gate transistor connected to data storage node of the cross-coupled inverter, a read buffer transistor having a drain terminal connected to a bit line for read operation and a gate terminal connected to the pass gate transistor, a write operation transistor connected between the pass gate transistor and a bit line for write operation, and a drive transistor unit which is connected to a local line between the pass gate transistors and the write operation transistor and which provide a voltage to a gate terminal of the read buffer transistor based on a data value stored at the bit-cell..
Industry-academic Cooperation Foundation, Yonsei University


05/19/16
20160141011 
new patent

Semiconductor device and operating method thereof


Provided is a semiconductor device and an operating method thereof. The operating method of the semiconductor device includes performing an erase operation on a memory block including bottom dummy cells, a plurality of memory cells, top dummy cells and selection transistors arranged in a vertical direction with respect to a pipe gate, increasing threshold voltages of the top and bottom dummy cells at substantially a same time by applying a first soft program voltage to a bottom dummy word line coupled to the bottom dummy cells and a second soft program voltage greater than the first soft program voltage to the top dummy word line coupled to the top dummy cells, verifying the top and bottom dummy cells, and repeatedly performing the erase operation and increasing the threshold voltages by gradually increasing the first and second soft program voltages until the verifying of the top and bottom dummy cells passes..
Sk Hynix Inc.


05/19/16
20160140380 
new patent

Fingerprint sensors


A sensor for detecting fingerprints is provided having first and second substrates, a two-dimensional array of sensing elements formed on the first substrate, and a plurality of thin-film transistors or tfts for controlling the sensing elements at pixel location along the array. Each of the sensing elements detects one of electrical signals (e.g., capacitance, resistance, or impedance), temperature, or light via one of the first or second substrates representative of one or more fingerprints.
Cross Match Technologies, Inc.


05/19/16
20160139700 
new patent

Capacitive touch array substrate, touch display screen and driving method thereof


A capacitive touch array substrate, a touch display screen and a driving method thereof are disclosed to alleviate display abnormality caused by driving voltage imbalance between the parts of the common electrode. The capacitive touch array substrate includes an array substrate including a common electrode including a first part connected with a common voltage driving circuit and a second part including a plurality of touch driving electrodes, and the first part of the common electrode is connected with the touch driving electrodes via switching transistors..
Boe Technology Group Co., Ltd.


05/12/16
20160134281 

Switch isolation network


Radio-frequency (rf) switches and devices are disclosed providing improved switch isolation. Disclosed rf switches may include a pole node, a first throw arm connected between the pole node and a first throw node, and a second throw arm connected between the pole node and a second throw node, the second throw arm including first and second field-effect transistors (fets).
Skyworks Solutions, Inc.


05/12/16
20160134280 

Bidirectional integrated cmos switch


A bidirectional integrated cmos switch is provided which is capable of switching voltages beyond the range of the supply and ground potentials. The switch is composed of nmos and pmos transistors as the switch conductor path, a diode bridge, and control circuitry to turn the switch on and off by means of low voltage logic, regardless of the voltages on the switch terminals.
Telephonics Corporation


05/12/16
20160134271 

Buffer circuit


It is an object of the present invention to provide a buffer circuit that reduces a reverse voltage applied to transistors being a complementary pair during turn-on and turn-off. A buffer circuit is a buffer circuit that turns on and turns off a switching element and includes a drive-side element that has an end connected to a base of a drive transistor and a sink-side element that has an end connected to a base of a sink transistor.
Mitsubishi Electric Corporation


05/12/16
20160134270 

Radio-frequency devices with gate node voltage compensation


Radio-frequency (rf) devices are disclosed having transistor gate voltage compensation to provide improved switching performance. Rf devices, such as switches, include a plurality of field-effect transistors (fets) connected in series between first and second nodes, each fet having a gate.
Skyworks Solutions, Inc.


05/12/16
20160134264 

Meta-stability prevention for oscillators


In an integrated circuit, meta-stability prevention circuitry prevents an oscillator, such as a current-controlled oscillator having a ring of differential inverters, from being turned on, for example, during power up, until after the power-supply voltage is sufficiently high for the oscillator ring to achieve oscillation without going into a meta-stable state. In one implementation, a level detector monitors the power-supply voltage level and generates a logic signal indicating whether or not the power-supply voltage level is sufficiently high.
Lattice Semiconductor Corporation


05/12/16
20160134241 

Power amplifier


A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors..
Murata Manufacturing Co., Ltd.


05/12/16
20160134199 

High voltage analog switch


A high voltage analog switch can be used in medical ultrasound applications. The high voltage analog switch can pass high voltage transducer excitation signals without necessarily having any high voltage power supplies.
Monolithic Power Systems, Inc.


05/12/16
20160133753 

Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure


Semiconductor devices are provided such as, ferroelectric transistors and floating gate transistors, that include an epitaxial perovskite/doped strontium titanate structure formed above a surface of a semiconductor substrate. The epitaxial perovskite/doped strontium titanate structure includes a stack of, in any order, a doped strontium titanate and a perovskite type oxide..
International Business Machines Corporation


05/12/16
20160133751 

Hydrogenated p-channel metal oxide semiconductor thin film transistors


This disclosure provides p-type metal oxide semiconductor materials that display good thin film transistor (tft) characteristics. Also provided are tfts including channels that include p-type oxide semiconductors, and methods of fabrication.
Qualcomm Incorporated


05/12/16
20160133744 

Transistor and fabrication method thereof


A method for forming transistors includes providing a substrate having at least a dummy gate structure having at least dummy gate layer; forming a first dielectric layer on the substrate; thinning the first dielectric layer with a pre-determined depth to cause a top surface of the dielectric layer to be lower than a top surface of the dummy gate structure and expose top portions of side surfaces of the dummy gate structure; forming a stress layer on the exposed portions of the side surfaces of the dummy gate structure; forming a second dielectric layer on the thinned first dielectric layer; removing the dummy gate layer to form an opening with an enlarged top size caused by releasing stress in the stress layer previously formed on the exposed portions of the side surfaces of the dummy gate structure; and forming a gate electrode layer in the opening.. .
Semiconductor Manufacturing International (shanghai) Corporation


05/12/16
20160133731 

Lateral bipolar junction transistors having high current-driving capability


A bipolar junction transistor includes a common base region, a plurality of emitter regions disposed in the common base region and arrayed to be spaced apart from each other in a first diagonal direction, and a plurality of collector regions disposed in the common base region and arrayed to be spaced apart from each other in the first diagonal direction. The plurality of emitter regions and the plurality of collector regions are alternately arrayed in a second diagonal direction..
Sk Hynix Inc.


05/12/16
20160133717 

Transistors, memory cells and semiconductor constructions


Some embodiments include a semiconductor construction having a gate extending into a semiconductor base. Conductively-doped source and drain regions are within the base adjacent the gate.
Micron Technology, Inc.


05/12/16
20160133700 

Nanowire and planar transistors co-integrated on utbox soi substrate


Fabrication of a microelectronic device on a semiconductor on insulator type substrate, the device being provided with a transistor of a given type, the channel structure of which is formed from semiconducting bar(s), a dielectric area different from the insulating layer of the substrate being provided to replace the insulating layer, facing the transistor channel structure, specifically for this given type of transistor.. .
Stmicroelectronics (crolles 2) Sas


05/12/16
20160133651 

Light-emitting device


A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits.
Semiconductor Energy Laboratory Co., Ltd.


05/12/16
20160133645 

Radio-frequency switches having silicon-on-insulator field-effect transistors with reduced linear region resistance


Disclosed are devices and methods related to radio-frequency (rf) switches having silicon-on-insulator (soi) field-effect transistors (fets). In some embodiments, an rf switch can include an fet with shaped source, drain, and gate selected to yield a reduced per-area value of resistance in linear operating region (rds-on).
Skyworks Solutions, Inc.


05/12/16
20160133634 

Fin field-effect transistor static random access memory devices with p-channel metal-oxide-semiconductor pass gate transistors


A complementary metal oxide semiconductor (cmos) static random access memory (sram) cell. A cmos sram cell in accordance with an aspect of the present disclosure includes a bit line and a word line.
Qualcomm Incorporated


05/12/16
20160133633 

Sram cells with vertical gate-all-round mosfets


A static random access memory (sram) cell includes a first and a second pull-up transistor, a first and a second pull-down transistor forming cross-latched inverters with the first and the second pull-up transistors, and a first and a second pass-gate transistor. Each of the first and the second pull-up transistors, the first and the second pull-down transistors, and the first and the second pass-gate transistors includes a bottom plate as a first source/drain region, a channel over the bottom plate, and a top plate as a second source/drain region.
Taiwan Semiconductor Manufacturing Co., Ltd.


05/12/16
20160133617 

Forming a panel of triple stack semiconductor packages


A method for forming a panel of stacked semiconductor packages includes providing a bottom leadframe (lf) panel including lfs downset each including at least a plurality of terminals. Low side (ls) transistors are attached to the first die attach area.
Texas Instruments Incorporated


05/12/16
20160133526 

Devices having inhomogeneous silicide schottky barrier contacts


A method of fabricating schottky barrier contacts for an integrated circuit (ic). A substrate including a silicon including surface is provided.
Texas Instruments Incorporated


05/12/16
20160133509 

Methods and apparatus of metal gate transistors


In some embodiments, a method of manufacturing a device includes providing a first device with an isolation area, an active area next to the isolation area, a metal gate above the isolation area and the active area, and a dielectric layer above the metal gate. The method also includes forming a first opening within a conductive layer of the metal gate, and a second opening within the dielectric layer.
Taiwan Semiconductor Manufacturing Company, Ltd.


05/12/16
20160133321 

Memory devices and related methods


A resistive memory device. Implementations may include an array of memory cells including resistive memory elements which are coupled to isolation transistors and which may include a magnetic tunnel junction.

05/12/16
20160133315 

Semiconductor device


A semiconductor device with a memory unit of which the variations in the operation timing are reduced is provided. For example, the semiconductor device is provided with dummy bit lines which are arranged collaterally with a proper bit line, and column direction load circuits which are sequentially coupled to the dummy bit lines.
Renesas Electronics Corporation


05/12/16
20160133186 

Display device, laying out light emitting elements, and electronic device


Disclosed herein is a display device in which light emitting elements of a plurality of colors including a light emitting element emitting blue light are formed in each pixel on a substrate on which a transistor is formed for each sub-pixel, and a plurality of pixels formed with sub-pixels of the plurality of colors as a unit are arranged in a form of a matrix, wherein relative positional relation between transistors of sub-pixels of respective light emission colors including blue light and a light emitting section of a light emitting element emitting the blue light is laid out such that distances between the transistors of the sub-pixels of the respective light emission colors including the blue light and the light emitting section of the light emitting element emitting the blue light are equal to each other for the respective colors.. .
Sony Corporation


05/12/16
20160133184 

Organic light-emitting diode display with luminance control


An organic light-emitting diode display may have an array of pixel circuits. Each pixel circuit may contain an organic light-emitting diode that emits light, a drive transistor that controls current flow through the diode, and additional transistors such as switching transistors for loading data into the pixel circuit and emission transistors for enabling and disabling current flow through the drive transistor and diode.
Apple Inc.


05/12/16
20160132386 

Semiconductor device and driving method thereof


An error of stored data is detected with high accuracy. Data (e.g., a remainder in a crc) used for detecting an error is stored in a memory in which an error is unlikely to occur.
Semiconductor Energy Laboratory Co., Ltd.


05/12/16
20160131939 

Reflective type display device


According to one embodiment, a reflective type liquid crystal display device provided can suppress light leakage into a thin film transistor due to entry of extraneous light. An array substrate includes a glass substrate, a plurality of thin film transistors, a plurality of pixel electrodes, and a metal film.
Japan Display Inc.


05/05/16
20160128154 

Lighting system with built-in intelligence


The present invention provides an improved lighting system, for an led lamp, with built-in intelligence and a controlling unit. The controlling unit comprises one or more field effect transistors and a microcontroller.
Lunera Lighting Inc.


05/05/16
20160127720 

Liquid crystal display panel and black picture insertion the panel displayed in 3d mode


An lcd panel includes multiple data lines, multiple scanning lines, multiple pixels, and multiple control transistors. Each pixel connected with a corresponding one of the data lines and one of the scanning lines.
Shenzhen China Star Optoelectronics Technology Co. Ltd.


05/05/16
20160126951 

Integrated magnetic field sensor-controlled switch devices


Embodiments relate to integrated magnetic field sensor-controlled switch devices, such as transistors, current sources, and power switches, among others. In an embodiment, a magnetic switch and a load switch are integrated in a single integrated circuit device.
Infineon Technologies Ag


05/05/16
20160126935 

Circuit and compensating for early effects


Early effects are intrinsically present in bipolar junction transistors (bjts). Described are examples of complimentary to absolute temperature (ctat) and proportional to absolute temperature (ptat) cells that reduce errors associated with the early effects that would otherwise be present..
Analog Devices Global


05/05/16
20160126909 

Programmable hysteresis comparator


In one embodiment, a circuit includes a differential amplifier having a differential pair with a first transistor and second transistor. Each of the first and the second transistors include a front gate contact and a back gate contact.
Stmicroelectronics Pvt. Ltd.


05/05/16
20160126896 

Transformer feedback amplifier


An apparatus includes: first and second transistors, each of the first and second transistors includes a gate terminal, a source terminal, and a drain terminal; and a transformer including a primary winding and first and second secondary windings, the primary winding is coupled to a first input node configured to receive an input signal and a second input node configured to receive a potential, the first and second secondary windings are coupled to gate terminals of the first and second transistors and cross-coupled to source terminals of the first and second transistors.. .
Qualcomm Incorporated


05/05/16
20160126850 

Integrated primary startup bias and mosfet driver


Some implementations are directed to a a dc-to-dc converter that includes a power transformer having a primary side and a secondary side and a plurality of power transistors coupled to the primary side of the transformer. The converter also includes a secondary bias supply coupled to the secondary side of the transformer and a secondary side controller coupled to the secondary side of the transformer and configured to generate a feedback control signal based on a voltage level associated with the secondary side of the transformer.
Texas Instruments Incorporated


05/05/16
20160126844 

Secondary side control of resonant dc/dc converters


A secondary-side rectification and regulation circuit includes a secondary-side transformer winding, a full-wave rectifier circuit and a control unit. The full-wave rectifier has a first pair of controllable rectifiers including a first transistor connected to a first terminal of the secondary-side transformer winding and a second transistor connected to a second terminal of the secondary-side transformer winding.
Infineon Technologies Austria Ag


05/05/16
20160126484 

Optoelectronic devices made using layers detached from inherently lamellar semiconductor donors


Optoelectronic devices containing functional elements made from layers liberated from natural and/or fabricated inherently lamellar semiconductor donors. In one embodiment, a donor is provided, a layer is detached from the donor, and the layer is incorporated into an optoelectronic device as a functional element thereof.
Verlase Technologies Llc


05/05/16
20160126359 

Split gate flash cell semiconductor device


A split gate flash cell device with floating gate transistors is provided. Each floating gate transistor is formed by providing a floating gate transistor substructure including an oxide disposed over a polysilicon gate disposed over a gate oxide disposed on a portion of a common source.
Wafertech, Llc


05/05/16
20160126355 

Thin film transistors with metal oxynitride active channels for electronic displays


In yet another embodiment of the invention a high electron mobility thin film transistor structure with a plurality of gate insulating layers and a plurality of metal oxynitride active channel layers for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted on state series resistance in the metal oxynitride active channel layers and to minimize unwanted power dissipation in the backplane circuit.. .

05/05/16
20160126354 

Methods of forming transistors


Some embodiments include methods of forming transistors. Recesses are formed to extend into semiconductor material.
Micron Technology, Inc.


05/05/16
20160126350 

Ldmos transistors for cmos technologies and an associated production method


In a semiconductor component or device, a lateral power effect transistor is produced as an ldmos transistor in such a way that, in combination with a trench isolation region (12) and the heavily doped feed guiding region (28, 28a), an improved potential profile is achieved in the drain drift region (8) of the transistor. For this purpose, in advantageous embodiments, it is possible to use standard implantation processes of cmos technology, without additional method steps being required..
X-fab Semiconductor Foundries Ag


05/05/16
20160126338 

Transistor and fabrication method thereof


A method for forming transistors is provided. The method includes providing a substrate having a base and at least a fin on the base; and forming a gate layer on the fin, the gate layer has first side surfaces parallel to a longitudinal direction of the fin and second side surfaces perpendicular to the fin.
Semiconductor Manufacturing International (shanghai) Corporation


05/05/16
20160126302 

Organic light-emitting diode (oled) device and display device


The present disclosure relates to an organic light-emitting diode (oled) device and a display device. The oled device may include a substrate, thin film transistors (tfts), an anode, a cathode, and an organic light-emitting layer between the anode and the cathode and configured to emit light.
Boe Technology Group Co., Ltd.


05/05/16
20160126293 

Active matrix light emitting diodes display module with carbon nanotubes control circuits and methods of fabrication


An active matrix light emitting diodes display module integrated with single-walled carbon nanotubes control circuits includes a light emitting diode pixel having a crystalline semiconductor light emitting diode, single-walled carbon nanotubes switching transistors and a charge storage capacitor. .
Atom Nanoelectronics, Inc.


05/05/16
20160126281 

Grounding system for integrated circuits of particular usefulness for circuits incorporating backside-illuminated photosensor arrays


A backside-illuminated photosensor array ic is formed in a thinned circuit wafer. Silicon is removed in at least one substrate-stripped zone where a doped edge-contact ring surrounds the substrate-stripped zone, the edge-contact ring formed in a same first side of the wafer as a plurality of transistors, and opposite to a backside of the wafer.
Omnivision Technologies, Inc.


05/05/16
20160126265 

Image sensor having improved quantum efficiency at large wavelengths


The invention relates to an image sensor specially adapted to vision in low-light conditions (notably night vision).the sensor is formed on an integrated circuit chip starting from a silicon substrate. It comprises: a matrix of rows and columns of active pixels each comprising at least one photodiode and transistors, control circuits for the matrix, external to the matrix, and signal read circuits, external to the matrix.
E2v Semiconductors


05/05/16
20160126230 

Triple stack semiconductor package


A method for forming a stacked semiconductor package includes providing a bottom leadframe (lf) panel including lfs downset each including at least a plurality of terminals. Low side (ls) transistors are attached to the first die attach area.
Texas Instruments Incorporated




Transistors topics: Transistors, Semiconductor, Semiconductor Device, Integrated Circuit, High Speed, Photodiode, Memory Effect, Silicon Nitride, Enhancement, Ion Implant, Ion Channel, Interrupted, Reference Voltage, Semiconductor Devices, Semiconductor Substrate

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