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Transistors

Transistors-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Reference voltage generator and light emitting diode device comprising the same
Fairchild Korea Semiconductor Ltd.
June 22, 2017 - N°20170181237

A reference voltage generator disclosed herein includes an amplifier including two input terminals connected to a dimming signal and a first node, respectively, and an output terminal, a first transistor including a gate connected to the output terminal of the amplifier and one electrode connected to the first node, second and third transistors configured to form a current mirror, and ...
Current accumulative pixel structure for cmos-tdi image sensor
Tianjin University
June 22, 2017 - N°20170180666

The present invention relates to technical field of analog integrated circuit design. Tdi function is better realized by cmos image sensor and it improves scanning frequency of the cmos-tdi image sensor and extends application range of tdi technique. To this end, the present invention proposes a technical solution of a current accumulative pixel structure for cmos-tdi image sensor which comprises ...
Image sensor color correction
Omnivision Technologies, Inc.
June 22, 2017 - N°20170180662

An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of transfer transistors. Individual transfer transistors in the plurality of transfer transistors are coupled to individual photodiodes in the plurality of photodiodes. A floating diffusion is also coupled to the plurality of transfer transistors to receive image charge from the plurality of photodiodes. The ...
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Method and apparatus for radio modulator and antenna driver
Intel Ip Corporation
June 22, 2017 - N°20170180013

A communication device includes a pulse width modulator that is provided with an oscillator signal at a communication carrier frequency. The pulse width modulator input is an amplified reference voltage that is regulated by a feedback loop. A modulation control provides the data signal to be transmitted. The modulation control may either be provided to the amplifier mixed with the ...
Semiconductor integrated circuit and high frequency antenna switch
Kabushiki Kaisha Toshiba
June 22, 2017 - N°20170179945

An integrated circuit includes a drive circuit with a first inverter circuit with a first transistor of a first conductivity type and a second transistor of a second conductivity type. The drains of the first and second transistors are connected. An output circuit is provided having a third transistor of the second conductivity with a gate connected to the drains ...
Power switch drivers with equalizers for paralleled switches
Virginia Tech Intellectual Properties, Inc.
June 22, 2017 - N°20170179944

Capacitors connected between gate terminals of a plurality of parallel-connected power transistors are charged and discharged in each switching cycle to provide a plurality of power transistor control waveforms from a single gate driver waveform that equalize power losses/temperatures or steady-state currents among the plurality of power transistors. The capacitors are charged to different voltages by diverting current from ...
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Wideband amplifier circuits and methods
Qualcomm Incorporated
June 22, 2017 - N°20170179910

An wideband amplifier circuit such as a transimpedance amplifier achieves improved amplifier and/or system performance, such as a reduced input impedance. The transimpedance amplifier may use a complementary common gate stage that receives an input signal and generates current to a current summing stage. In one instance, an input current is received by a complimentary common gate stage that ...
Programmable-gain amplifier, corresponding device and method
Stmicroelectronics S.r.l.
June 22, 2017 - N°20170179897

A programmable-gain amplifier includes: two complementary cross-coupled transistor pairs mutually coupled with each transistor in one pair having a current flow path cascaded with a current flow path of a respective one of the transistors in the other pair. First and second coupling points are formed between the pairs; with first and second sampling capacitors coupled thereto. First and second ...
Mitigating amplifier pop noise
Texas Instruments Incorporated
June 22, 2017 - N°20170179893

At least some embodiments are directed to a system comprising an amplifier containing a first bias current source and configured to provide an output voltage at a node, a gain stage coupled to the node and comprising a second bias current source, and a buffer stage coupled to the node and comprising third and fourth bias current sources and an ...
Small signal amplifier
Imec Vzw
June 22, 2017 - N°20170179891

An amplifier circuit, a voltage sensing apparatus, and an amplification method are disclosed. The amplifier circuit comprises (1) an input stage comprising a first set of transistors to which an input signal to be amplified is applied, the transistors of the first set comprising a semiconductor body, and (2) a processing stage comprising a second set of transistors for processing the signal ...
Multimode voltage controlled oscillator
Qualcomm Incorporated
June 22, 2017 - N°20170179883

Features and advantages of the present disclosure include a multimode voltage controlled oscillator (vco). In one embodiment, a circuit comprises a vco, first and second transistors, and first and second capacitive attenuators. The first and second transistors are cross coupled through the attenuators. In a first mode, the first and second transistors are turned off, and the capacitive attenuators attenuate ...
System and method for controlling a voltage controlled oscillator
Semiconductor Components Industries, Llc
June 22, 2017 - N°20170179882

An electrical circuit includes: at least one inductor, at least one varactor, and at least two transistors, all of which electrically arranged to form a voltage controlled oscillator (vco) having an oscillation frequency; wherein the at least two transistors includes a first transistor and a second transistor; wherein the first transistor has a first bulk terminal and a first parasitic ...
Current sensing in a power supply
Infineon Technologies Americas Corp.
June 22, 2017 - N°20170179824

During operation, a protection circuit receives an input voltage representative of current delivered by a power supply phase to a load. In one configuration, the input voltage is received as the voltage across respective drain-source nodes of a synchronous switch (low side switch) disposed in a power supply. The protection circuit selectively controls conveyance of the input voltage so that ...
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Magnetic tunnel junction based anti-fuses with cascoded transistors
International Business Machines Corporation
June 22, 2017 - N°20170179380

Magnetic tunnel junction antifuse devices are protected from degradation caused by programming voltage drop across the gates of unselected magnetic tunnel junction antifuses by connecting said magnetic tunnel junctions serially with a first field effect transistor and a second field effect transistor, the first field effect transistor having its gate connected to a positive supply voltage while the gate of ...
Leakage-free implantation-free etsoi transistors
International Business Machines Corporation
June 22, 2017 - N°20170179304

A semiconductor device includes an extremely thin semiconductor-on-insulator substrate (etsoi) having a base substrate, a thin semiconductor layer and a buried dielectric therebetween. A device channel is formed in the thin semiconductor layer. Source and drain regions are formed at opposing positions relative to the device channel. The source and drain regions include an n-type material deposited on the buried ...
Vertical field effect transistors
International Business Machines Corporation
June 22, 2017 - N°20170179302

Vertical field effect transistors (fets) with minimum pitch and methods of manufacture are disclosed. The structure includes at least one vertical fin structure and gate material contacting with the at least one vertical fin structure. The structure further includes metal material in electrical contact with the ends of the at least one vertical fin.
Strain compensation in transistors
Intel Corporation
June 22, 2017 - N°20170179228

Transistor structures having channel regions comprising alternating layers of compressively and tensilely strained epitaxial materials are provided. The alternating epitaxial layers can form channel regions in single and multigate transistor structures. In alternate embodiments, one of the two alternating layers is selectively etched away to form nanoribbons or nanowires of the remaining material. The resulting strained nanoribbons or nanowires form ...
Horizontal current bipolar transistors with improved breakdown voltages
University Of Zagreb, Faculty Of Electrical Engineering And Computing
June 22, 2017 - N°20170179220

A horizontal current bipolar transistor comprises a substrate of first conductivity type, defining a wafer plane parallel to said substrate; a collector drift region above said substrate, having a second, opposite conductivity type, forming a first metallurgical pn-junction with said substrate; a collector contact region having second conductivity type above said substrate and adjacent to said collector drift region; a ...
Static random access memory device with vertical fet devices
Taiwan Semiconductor Manufacturing Co., Ltd.
June 22, 2017 - N°20170179135

An sram includes an sram array comprising a plurality of sram cells arranged in a matrix. Each of the sram cells includes six vertical field effect transistors. The sram array includes a plurality of groups of conductive regions extending in the column direction. Each of the plurality of groups of conductive regions includes a first to a fourth conductive region ...
Layout of static random access memory cell
Taiwan Semiconductor Manufacturing Co., Ltd.
June 22, 2017 - N°20170179134

A static random access memory (sram) cell is defined by first and second boundaries disposed opposite to each other and third and fourth boundaries disposed opposite to each other and intersected by the first and second boundaries. The sram cell includes a first invertor including a first p-type pull-up transistor and a first n-type pull-down transistor, a second invertor including ...
Semiconductor device
Semiconductor Energy Laboratory Co., Ltd.
June 22, 2017 - N°20170179132

Provided is a semiconductor device which has low power consumption and can operate at high speed. The semiconductor device includes a memory element including a first transistor including crystalline silicon in a channel formation region, a capacitor for storing data of the memory element, and a second transistor which is a switching element for controlling supply, storage, and release of ...
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