FreshPatents.com Logo
Enter keywords:  

Track companies' patents here: Public Companies RSS Feeds | RSS Feed Home Page
Popular terms

[SEARCH]

Transistors topics
Transistors
Semiconductor
Semiconductor Device
Integrated Circuit
High Speed
Photodiode
Memory Effect
Silicon Nitride
Enhancement
Ion Implant
Ion Channel
Interrupted
Reference Voltage
Semiconductor Devices
Semiconductor Substrate

Follow us on Twitter
twitter icon@FreshPatents

Web & Computing
Cloud Computing
Ecommerce
Search patents
Smartphone patents
Social Media patents
Video patents
Website patents
Web Server
Android patents
Copyright patents
Database patents
Programming patents
Wearable Computing
Webcam patents

Web Companies
Apple patents
Google patents
Adobe patents
Ebay patents
Oracle patents
Yahoo patents

[SEARCH]

Transistors patents



      
           
This page is updated frequently with new Transistors-related patent applications. Subscribe to the Transistors RSS feed to automatically get the update: related Transistors RSS feeds. RSS updates for this page: Transistors RSS RSS


Cmos transistor with dual high-k gate dielectric

Cmos transistor with dual high-k gate dielectric

Replacement metal gate process for cmos integrated circuits

Replacement metal gate process for cmos integrated circuits

Replacement metal gate process for cmos integrated circuits

Stacked comparator topology for multi-level signaling

Date/App# patent app List of recent Transistors-related patents
10/23/14
20140315363
 6t sram architecture for gate-all-around nanowire devices patent thumbnail6t sram architecture for gate-all-around nanowire devices
A memory device includes a first plurality of semiconductor nanowires tethered between landing pads and suspended over a substrate. A first gate electrode surrounds each of the first plurality of semiconductor nanowires, making them gate-all-around, (gaa) semiconductor nanowires.
10/23/14
20140315362
 Cmos transistor with dual high-k gate dielectric patent thumbnailCmos transistor with dual high-k gate dielectric
A cmos device with transistors having different gate dielectric materials and a method of manufacture thereof. A cmos device is formed on a workpiece having a first region and a second region.
10/23/14
20140315361
 Replacement metal gate process for cmos integrated circuits patent thumbnailReplacement metal gate process for cmos integrated circuits
A complementary metal-oxide-semiconductor (cmos) integrated circuit structure, and method of fabricating the same according to a replacement metal gate process. P-channel and n-channel mos transistors are formed with high-k gate dielectric material that differ from one another in composition or thickness, and with interface dielectric material that differ from one another in composition or thickness.
10/23/14
20140314172
 Stacked comparator topology for multi-level signaling patent thumbnailStacked comparator topology for multi-level signaling
A system and method for detecting signal levels in a multi-level signaling receiver. In one embodiment, a plurality of comparators, each including a differential pair, such as a differential pair of field-effect transistors (fets) are assembled in a stacked configuration so that in some states current flows through fets of the plurality of differential pairs in series, resulting in a reduction in power consumption..
10/23/14
20140313828
 Sharing support circuitry in a memory patent thumbnailSharing support circuitry in a memory
A memory device, system, and method for operation of a memory device are disclosed. In one such memory device, the memory device comprises a plurality of strings of memory cells.
10/23/14
20140313811
 Semiconductor device patent thumbnailSemiconductor device
A semiconductor device with a memory unit of which the variations in the operation timing are reduced is provided. For example, the semiconductor device is provided with dummy bit lines which are arranged collaterally with a proper bit line, and column direction load circuits which are sequentially coupled to the dummy bit lines.
10/23/14
20140313808
 Content addressable memory chip patent thumbnailContent addressable memory chip
A content addressable memory chip which can perform a high speed search with less error is provided. A match amplifier zone determines coincidence or non-coincidence of search data with data stored in the content addressable memory cells in an entry of a cam cell array, according to the voltage of a match line.
10/23/14
20140312960
 Semiconductor device and operating method thereof patent thumbnailSemiconductor device and operating method thereof
A substrate including a plurality of transistors, and a piezoelectric formed to be contacted with the substrate. The piezoelectric is formed heat-expendably in a direction parallel to a gate direction of the transistors..
10/23/14
20140312954
 High-voltage multi-level shifter for ultrasound applications and transmit/receive channel for ultrasound applications using said level shifter patent thumbnailHigh-voltage multi-level shifter for ultrasound applications and transmit/receive channel for ultrasound applications using said level shifter
A multi-level shifter includes a first branch having first and second transistors coupled between a higher voltage terminal and a lower voltage terminal. The multi-level shifter comprises a second branch, in parallel with the first branch, having: a third transistor, coupled between said higher voltage reference terminal and an output node, a fourth switching transistor coupled between said output node and said lower voltage terminal.
10/23/14
20140312950
 Data holding circuit and semiconductor integrated circuit device patent thumbnailData holding circuit and semiconductor integrated circuit device
A circuit including: an input stage that includes a first input unit into which input data is input and a pair of first output units and is driven by a first power-supply voltage; a pair of first gate elements that includes first transistors, and is driven by a clock that includes a second power-supply voltage that is lower than the first power-supply voltage; a first latch circuit that includes a pair of second input units, and is driven by the first power-supply voltage; a pair of second gate elements that includes second transistors, and is driven by an inverted clock of the clock; and a second latch circuit that includes a pair of third input units, and a third output unit that outputs one of a pair of pieces of data, and is driven by the first power-supply voltage.. .
10/23/14
20140312875
Startup circuits with native transistors
Startup circuits with native transistors. In some embodiments, a startup circuit may include a first inverter configured to receive a bandgap voltage (vbg) from a bandgap reference circuit and to produce an output voltage (vout), and a second inverter operably coupled to the first inverter to form a latch, the latch configured to maintain a value of vout, the second inverter including a native transistor, the native transistor having a gate terminal coupled to vout and a source terminal coupled to vbg.
10/23/14
20140312865
Voltage generator with current source compensated for an error current operable over a wide voltage range
In one embodiment, a regulator circuit for generating a regulated output voltage vout has an error amplifier using a pair of bipolar transistors at its front end. The error amplifier compares the regulated output voltage to a reference voltage vref.
10/23/14
20140312710
Multiple output charge pump with peak voltage following frequency divider control
A power converter for a load with varying power requirements dynamically adjusts its supply voltage to the load so as to track the radio frequency (rf) envelope of the signal being carried by the load. The supply voltage can be provided by a multiple-output charge pump providing multiple output voltage levels concurrently, and a switch to provide a selected one of the different output voltage levels as the supply voltage to the load.
10/23/14
20140312697
Active triac triggering circuit
A power supply unit for use with thermostats or other like devices requiring power. A power supply unit may be designed to keep electromagnetic interference emissions at a minimum, particularly at a level that does not violate governmental regulations.
10/23/14
20140312696
Mosfet gate driving circuit for transition softening
A power supply unit for use with thermostats or other like devices requiring power. A power supply unit may be designed to keep electromagnetic interference emissions at a minimum, particularly at a level that does not violate governmental regulations.
10/23/14
20140312471
Semiconductor device and manufacturing method thereof
A semiconductor device has a plurality of closely spaced fins each coated at its top and sidewalls with a sige layer used for improving charge carrier mobility in a channel portion of the device. The sidewalls of the closely adjacent fins are selectively thinned so as to prevent an undesired bridging of sige material between immediately adjacent ones of the fins.
10/23/14
20140312441
Novel spin hall effect magnetic-ram
A spin hall effect magnetoresistive memory comprises apparatus of a three terminal magnetoresistive memory cell having an mtj stack, a functional magnetic layer having a magnetization anti-parallel or parallel coupled with a recording layer magnetization in the mtj stack, and a she-metal base layer. The control circuitry coupled through the bit line and the two select transistors to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two bottom electrodes and to supply a bi-directional spin hall effect recording current, and accordingly to directly switch the magnetization of the functional magnetic coupling layer and indirectly switching the magnetization of the recording layer through the coupling between the functional magnetic coupling layer and the recording layer..
10/23/14
20140312426
6t sram architecture for gate-all-around nanowire devices
A memory device includes a first plurality of semiconductor nanowires tethered between landing pads and suspended over a substrate. A first gate electrode surrounds each of the first plurality of semiconductor nanowires, making them gate-all-around (gaa) semiconductor nanowires.
10/23/14
20140312413
Self aligned embedded gate carbon transistors
Transistors with self-aligned source/drain regions a gate structure embedded in a substrate; self-aligned source and drain contacts embedded in the substrate around the gate structure; and a channel layer over the gate structure and self-aligned source and drain contacts. The source and drain contacts extend above the channel layer..
10/23/14
20140312412
Self aligned embedded gate carbon transistors
Transistors with self-aligned source/drain regions and methods for making the same. The methods include forming a gate structure embedded in a recess in a substrate; removing substrate material around the gate structure to create self-aligned source and drain recesses; forming a channel layer over the gate structure and the source and drain recesses; and forming source and drain contacts in the source and drain recesses, wherein the source and drain contacts extend above the channel layer..
10/23/14
20140312403
Memory cell floating gate replacement
A nand flash memory chip is formed by depositing two n-type polysilicon layers. The upper n-type polysilicon layer is then replaced with p-type polysilicon and barrier layer in the array area only, while maintaining the upper n-type polysilicon layer in the periphery.
10/23/14
20140312392
Solid-state imaging device, method of manufacturing the same, method of driving the same, and electronic apparatus
A solid-state imaging device includes a plurality of pixels, each of which includes a photoelectric converter section formed on a first substrate to generate and accumulate signal charges corresponding to incident light, a charge accumulation capacitor section formed on the first substrate or a second substrate to temporarily hold the signal charges transferred from the photoelectric converter section, and a plurality of mos transistors formed on the second substrate to transfer the signal charges accumulated in the charge accumulation capacitor section, connection electrodes formed on the first substrate, and connection electrodes formed on the second substrate and electrically connected to the connection electrodes formed on the first substrate.. .
10/23/14
20140312390
Layout structure of heterojunction bipolar transistors
A layout structure of hbts comprising one or more hbts, each of which comprises a base electrode, an emitter electrode, and a collector electrode. A passive layer, a first dielectric layer, a collector redistribution layers, one or more emitter copper pillars, and one or more collector copper pillars are formed above the one or more hbts.
10/23/14
20140312334
Organic electroluminescent display device
An organic el display device of active matrix type wherein insulated-gate field effect transistors formed on a single-crystal semiconductor substrate are overlaid with an organic el layer; characterized in that the single-crystal semiconductor substrate (413 in fig. 4) is held in a vacant space (414) which is defined by a bed plate (401) and a cover plate (405) formed of an insulating material, and a packing material (404) for bonding the bed and cover plates; and that the vacant space (414) is filled with an inert gas and a drying agent, whereby the organic el layer is prevented from oxidizing..
10/23/14
20140312330
Inspection system for oled display panels
A system for inspecting at least a portion of a display panel having thin film transistors (tfts) and light emitting devicxes (oleds), during or immediately following fabrication, so that adjustments can be made to the fabrication procedures to avoid defects and non-uniformities. The system provides bonding pads connected to signal lines on at least portions of the display panel, and probe pads along selected edges of the display panel.
10/23/14
20140312312
Organic light-emitting display device and method of manufacturing the same
A method of manufacturing an organic light-emitting display device includes providing a substrate which comprises thin-film transistors (tfts), and forming a planarization layer over the substrate. The planarization layer comprises a first planarization portion and a plurality of second planarization portions.
10/23/14
20140312131
Triac or bypass circuit and mosfet power steal combination
A power supply unit for use with thermostats or other like devices requiring power. A power supply unit may be designed to keep electromagnetic interference emissions at a minimum, particularly at a level that does not violate governmental regulations.
10/16/14
20140308807
Method for fabricating a semiconductor memory
A method for fabricating a semiconductor memory includes the following steps. Active areas are defined in a substrate.
10/16/14
20140308792
Methods of producing bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations
Methods for producing bipolar transistors are provided. In one embodiment, the method includes producing a bipolar transistor including first and second connected emitter-base (eb) junctions of varying different depths.
10/16/14
20140308789
Semiconductor memory device and method of manufacturing the same
According to one embodiment, a semiconductor memory device with memory cells each composed of a vertical transistor, comprises a silicon layer formed into a columnar shape on a silicon substrate, a gate insulating film part in which a tunnel insulating film, a charge storage layer, and a block insulating film are formed to surround the sidewall surface of the silicon layer, and a stacked structure part formed to surround the sidewall surface of the gate insulating film part and in which a plurality of interlayer insulating films and a plurality of control gate electrode layers are stacked alternately. The silicon layer, gate insulating film part, and control gate electrode layer constitute the vertical transistor.
10/16/14
20140308682
Graphene-biomolecule bioelectronic devices
Provided are devices and methods featuring a nanoelectronic interface between graphene devices (for example, field effect transistors or fets) and biomolecules such as proteins, which in turn provides a pathway for production of bioelectronic devices that combine functionalities of the biomolecular and inorganic components. In one exemplary application, one may functionalize graphene fets with fluorescent proteins to yield hybrids that respond to light at wavelengths defined by the optical absorption spectrum of the protein.
10/16/14
20140307513
Semiconductor memory device and body bias method thereof
A semiconductor memory device is provided which includes a function block including a plurality of transistors; a body bias control unit configured to detect a command and to generate a body bias selection signal according to the detection result; and a body bias generator configured to generate a body voltage according to the body bias selection signal and to provide the body voltage to bodies of the plurality of transistors, wherein the body bias generator down-converts a power supply voltage supplied from an external device to generate the body voltage.. .
10/16/14
20140307503
Eight transistor soft error robust storage cell
A storage cell is provided with improved robustness to soft errors. The storage cell comprises complementary core storage nodes and complementary outer storage nodes.
10/16/14
20140306946
Organic light emitting display device and method of driving the same
A method of driving an organic light emitting display device includes compensating threshold voltages of driving transistors included in respective pixels while concurrently supplying scan signals to scan lines, lowering voltages of gate electrodes of the driving transistors and equalizing voltages of first electrodes and second electrodes of the driving transistors after the compensating of the threshold voltages, transmitting data signals to the pixels while progressively supplying the scan signals to the scan lines, and emitting light concurrently from the pixels in response to gray levels of the data signals.. .
10/16/14
20140306906
Driving method for reducing display interference in in-cell multi-touch panel and system using the same
In a driving method for reducing display interference in in-cell multi-touch panel, a display driving signal is provided to k gate lines and a display image signal is provided to l source lines so as to drive corresponding transistors and capacitors in a display frame for displaying an image. The method also provides a touch driving signal to n touch driving lines and receives touch signals from m sensing lines to thereby detect one or more touch point positions of an external object in a touch frame based on the touch driving signal.
10/16/14
20140306760
Apparatus and method for transimpedance amplifiers with wide input current ranges
Improved preamplifier circuits for converting single-ended input current signals to differential output voltage signals, including first and second transimpedance amplifiers with input transistors operating according to bias currents from a biasing circuit, output transistors and adjustable feedback impedances modified using an automatic gain control circuit, as well as a reference circuit controlling the bias currents according to an on-board reference current and the single-ended input or the differential output voltage signals from the transimpedance amplifiers.. .
10/16/14
20140306744
Static signal value storage circuitry using a single clock signal
Signal value storage circuitry 2 is provided which includes a first transistor stack, a second transistor stack and a third transistor stack. The signal value storage circuitry is controlled by a single clock signal.
10/16/14
20140306737
Low-power voltage mode high speed driver
Differential voltage mode signal driver circuitry is presented in which a differential current mode amplifier input stage provides a differential signal, and an output stage includes a pair of bipolar transistors receiving the differential signal and being connected in series with a pair of cross-coupled field effect transistors that are coupled to corresponding current sources, where a negative impedance circuit is connected between the field effect transistors to substantially cancel a parasitic capacitance of a driven output circuit.. .
10/16/14
20140306685
Sequence circuit
A sequence circuit includes a power output terminal, first to third power input terminals, first to sixth resistors, first to tenth filed effect transistors (fets), first to third inductors, a first capacitor, a second capacitor, and first to third drivers. The sequence circuit ensures that different voltages work in a correct sequence..
10/16/14
20140306684
Voltage converting device
A voltage converting device includes first and second stage circuits for converting a differential voltage to an output signal that has a magnitude smaller than the differential voltage. The second stage circuit includes input transistors for receiving voltages from the first stage circuit, output transistors for outputting the output signal, and a clamp module to clamp voltages at the input transistors of the second stage circuit..
10/16/14
20140306683
Adaptive digital pulse width modulation generator for buck converters
Systems and methods are disclosed to control a buck converter by performing adaptive digital pulse width modulation (adpwm) with a plurality of upper power transistors each uniquely controlled to enable greater than 100% duty cycle for the buck converter and a lower power transistor coupled to the plurality of upper power transistors; and driving an inductor having one end coupled to the lower power transistor and the upper power transistors.. .
10/16/14
20140306674
Charge and discharge signal circuit and dc-dc converter
A charge and discharge signal circuit includes: high side transistors connected in series; low side transistors connected in series; high side drive circuits; low side drive circuits; and a drive signal generation circuit, wherein each drive circuit includes: a high side level shifter; a high side capacitor switch string of a capacitor and a switch element connected in series, being connected in parallel with the high side transistor; and a high side drive part, to which an output of the high side level shifter is supplied, and each of the low side drive circuits includes: a low side level shifter; a low side capacitor switch string of a capacitor and a switch element connected in series, being connected in parallel with the low side transistor; and a low side drive part, to which an output of the low side level shifter is supplied.. .
10/16/14
20140306294
Gap fill self planarization on post epi
The present disclosure relates to an integrated chip ic having transistors with structures separated by a flowable dielectric material, and a related method of formation. In some embodiments, an integrated chip has a semiconductor substrate and an embedded silicon germanium (sige) region extending as a positive relief from a location within the semiconductor substrate to a position above the semiconductor substrate.
10/16/14
20140306293
Semiconductor memory device including guard band
The semiconductor memory device including a first sense amplifier region including first metal-oxide-semiconductor (mos) transistors disposed in a well on a semiconductor substrate, a second sense amplifier region adjacent to the well and including second mos transistors disposed on the semiconductor substrate, a guard band having a bar type structure and provided between the first mos transistors in the well, and a guard ring partially or fully enclosing the second sense amplifier region in the semiconductor substrate may be provided.. .
10/16/14
20140306277
Semiconductor storage device
A memory includes a semiconductor substrate. Magnetic tunnel junction elements are provided above the semiconductor substrate.
10/16/14
20140306271
Unltra-shallow junction semiconductor field-effect transistor and method of making
An ultra-shallow junction semiconductor field-effect transistor and its methods of making are disclosed. In the present disclosure, a mixture film is formed on a semiconductor substrate with a gate structure formed thereon using a physical vapor deposition (pvd) process, which employs a mixture of metal and semiconductor dopants as a target.
10/16/14
20140306227
Display apparatus, array substrate, and method for producing the array substrate
A display apparatus, an array substrate, and a method for producing the array substrate are provides to so as to effectively reduce a horizontal distance occupied by the esd assembly at each side of the display region of the substrate and achieve a good performance of the narrow edge frame of the tft-lcd. The array substrate comprises a pixel region and a periphery wiring region, wherein an electro-static discharge (esd) assembly and a short-circuit ring are disposed in the periphery wiring region, and wherein the esd assembly comprises a plurality of thin film transistors (tfts) each having a source electrode and a drain electrode that are disposed within the short-circuit ring..
10/16/14
20140306225
Thin film transistor and shift register
Thin film transistors having a high current drive capability and a suitable threshold voltage are provided. The thin film transistor includes a gate electrode, an insulating layer formed on the gate electrode, a semiconductor layer formed on the insulating layer, and source/drain electrodes formed on the semiconductor layer.
10/16/14
20140306218
Display device and electronic device
Variation in the electrical characteristics of transistors is minimized and reliability of the transistors is improved. A display device includes a pixel portion 104 and a driver circuit portion 106 outside the pixel portion.
10/16/14
20140306212
Organic semiconductor device and process for its production
An organic semiconductor device selected from organic diodes, organic field effect transistors, and devices comprising an organic diode and/or organic field effect transistor and a method of producing such a device are provided. The organic semiconductor device comprises at least one semiconducting layer based on a diketopyrrolopyrrole (dpp) polymer.
10/09/14
20140303335
Diketopyrrolopyrrole polymers for use in organic semiconductor devices
The present invention relates to polymers comprising one or more (repeating) unit(s) of the formula (i) which are characterized in that ar1 and ar1′ are independently of each other are an annulated (aromatic) heterocyclic ring system, containing at least one thiophene ring, which may be optionally substituted by one, or more groups, and their use as organic semiconductor in organic devices, especially in organic photovoltaics (solar cells) and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties.
10/09/14
20140302652
Semiconductor device and method of fabricating the same
A method of manufacturing a semiconductor device, a semiconductor device and systems incorporating the same include transistors having a gate metal doped with impurities. An altered work function of the transistor may alter a threshold voltage of the transistor.
10/09/14
20140302647
Symmetric blocking transient voltage suppressor (tvs) using bipolar npn and pnp transistor base snatch
A symmetrical blocking transient voltage suppressing (tvs) circuit for suppressing a transient voltage includes an npn transistor having a base electrically connected to a common source of two transistors whereby the base is tied to a terminal of a low potential in either a positive or a negative voltage transient. The two transistors are two substantially identical transistors for carrying out a substantially symmetrical bi-directional clamping a transient voltage.
10/09/14
20140302637
Polymers based on benzodiones
The present invention relates to polymers comprising one or more (repeating) unit(s) of the formula (i), and compounds of formula (iii), wherein y, y15, y16 and y17 are independently of each other a group of formula (a), (b) or (c) and their use as ir absorber, organic semiconductor in organic devices, especially in organic photovoltaics and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers and compounds according to the invention can have excellent solubility in organic solvents and excellent film-forming properties.
10/09/14
20140301413
Method and system for an analog crossbar architecture
Methods and systems for an analog crossbar may comprise, in a wireless device comprising a receiver path with an analog crossbar: receiving a digital signal comprising a plurality of channels; amplifying the received signal; converting the amplified signal to an analog signal; separating the analog signal into a plurality of separate channels; routing the plurality of separate channels to desired signal paths utilizing the analog crossbar; and converting the routed plurality of separate channels to a plurality of digital signals. The analog crossbar may comprise an array of complementary metal-oxide semiconductor (cmos) transistors.
10/09/14
20140301045
Pulse signal output circuit and shift register
An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors.
10/09/14
20140300690
Peripheral viewing system for a vehicle
A peripheral viewing system for a vehicle includes a pair of digital cameras, each positioned on the exterior of the vehicle proximately positioned where a side view mirror would typically be mounted. An additional digital camera is mounted on the vehicle roof immediately adjacent the top edge of the rear window.
10/09/14
20140300421
Power amplifier circuit based on a cascode structure
A power amplifier circuit based on a cascode structure and to be powered by a power source voltage, e.g. A battery, said circuit comprising—a first transistor having a grid, source and drain terminal; said first transistor being connected in a common source mode;—a second grid source transistor having grid, source and drain terminal, said second transistor being connected in common grid mode;—a biasing circuit for biasing said first transistor and said second transistor.
10/09/14
20140300408
Semiconductor device having a complementary field effect transistor
A method for controlling power supply current in a cmos circuit, the method including applying a first predetermined voltage to a diode connected n-channel replica transistor, the n-channel replica transistor operating in weak inversion, applying a first substrate voltage to the substrate of the n-channel replica transistor so that the current flowing in the n-channel replica transistor equals a first predetermined target current, and applying the first substrate voltage to substrates of n-channel transistors in the cmos circuit. .
10/09/14
20140300400
Comparator and clock signal generation circuit
A comparator used in a clock signal generation circuit has first and second input transistors coupled to input signals of the comparator. First and second hysteresis transistors are coupled between the input transistors and an output stage of the comparator, and apply hysteresis to a comparison of the input signals.
10/09/14
20140300399
Pulse generation circuit and semiconductor device
Two gate drivers each comprising a shift register and a demultiplexer including single conductivity type transistors are provided on left and right sides of a pixel portion. Gate lines are alternately connected to the left-side and right-side gate drivers in every m rows.
10/09/14
20140300386
Voltage level shifter circuit, system, and method for high speed applications
A level shifting circuit includes a first inverter including a pair of transistors of opposite conductivity type, the first inverter adapted to receive an input signal in a first voltage domain and further including at least one additional transistor driven by a voltage in a second voltage domain. A second inverter is coupled in series with the first inverter and operable to generate an output signal in the second voltage domain.
10/09/14
20140300334
Apparatus and methods for voltage converter bypass circuits
Apparatus and methods for voltage converter bypass circuits are provided. In one embodiment, a voltage conversion system includes a bypass circuit and a voltage converter including an inductor and a plurality of switches configured to control a current through the inductor.
10/09/14
20140299927
Digital circuit having correcting circuit and electronic apparatus thereof
Provided is a digital circuit (30) that comprises: a switching circuit (31) having first transistors (32, 33) supplied with power supply potentials (vdd, vss); correcting circuits (34, 36) connected between an input terminal (in) inputted with an input signal and control terminals (gates) of the first transistors; capacitors (c2, c3) connected between the control terminals and the input terminal; diode-connected second transistors (35, 37) that are provided between nodes (n5, n6) between the capacitors and the control terminals and the power supply potentials and have the substantially same threshold voltage as the first transistors; and switches (sw2, sw3) connected in series with the second transistors.. .
10/09/14
20140299839
Electrical devices with graphene on boron nitride
Methods of forming and resulting devices are described that include graphene devices on boron nitride. Selected methods of forming and resulting devices include graphene field effect transistors (gfets) including boron nitride..
10/09/14
20140299838
Transistors, methods of forming transistors and display devices having transistors
A transistor, a display device, and associated methods, the transistor including a substrate; an active layer pattern disposed on the substrate, the active layer pattern including silicon and graphene; a gate insulating layer disposed on the active layer pattern; a gate electrode disposed on the gate insulating layer; an insulating interlayer covering the active layer pattern and the gate electrode; and a source electrode and a drain electrode in contact with the active layer pattern.. .
10/09/14
20140299772
Mid-infrared photodetectors
Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 μm to 12 μm and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (ccd), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors..
10/02/14
20140298282
Design structure for stacked cmos circuits
An automated method of modifying a semiconductor chip design includes creating a timing analysis of said semiconductor chip design, identifying a pluraility of gates in said semiconductor chip design which have either too fast a rising edge or falling edge, for each gate in said plurality of gates adding a stacked transistor to provide delay to the rising or falling edge of the gate. A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure includes a cmos device having a first transistor with a first input, a pair of stacked transistors having a second input, and an output..
10/02/14
20140295647
Bulk fin-field effect transistors with well defined isolation
A computer program storage product includes instructions for forming a fin field-effect-transistor. The instructions are configured to perform a method.
10/02/14
20140295630
Sige sram butted contact resistance improvement
The present disclosure relates to a method for fabricating a butted a contact arrangement configured to couple two transistors, wherein an active region of a first transistor is coupled to a gate of a second transistor. The gate of the second transistor is formed from a gate material which comprises a dummy gate of the first transistor, and is configured to straddle a boundary between the active region of the first transistor and an isolation layer formed about the first transistor.
10/02/14
20140293724
Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features
Systems and methods are disclosed for providing selective threshold voltage characteristics via use of mos transistors having differential threshold voltages. In one exemplary embodiment, there is provided a metal oxide semiconductor device comprising a substrate of semiconductor material having a source region, a drain region and a channel region therebetween, an insulating layer over the channel region, and a gate portion of the insulating layer.
10/02/14
20140293721
Sense amplifier circuit and semiconductor device
A single-ended sense amplifier circuit of the invention comprises first and second mos transistors and first and second precharge circuits. The first mos transistor drives the bit line to a predetermined voltage and switches connection between the bit line and a sense node and the second mos transistor whose gate is connected to the sense node amplifies the signal via the first mos transistor.
10/02/14
20140293703
Non-volatile memory device having vertical structure and method of operating the same
A non-volatile memory device having a vertical structure includes a nand string having a vertical structure. The nand string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells.
10/02/14
20140293702
Select gate materials having different work functions in non-volatile memory
In a 3d stacked non-volatile memory device, multiple smaller drain-end selected gate (sgd) transistors replace one larger sgd transistor. The sgd transistors have different work functions in their control gates so that, during a programming operation, a discontinuous channel potential is created in an inhibited nand string.
10/02/14
20140293701
Adjusting control gate overdrive of select gate transistors during programming of non-volatile memory
In a 3d stacked non-volatile memory device, multiple smaller drain-end selected gate (sgd) transistors replace one larger sgd transistor. The sgd transistors have different control gate overdrive voltages so that, during a programming operation, a discontinuous channel potential is created in an inhibited nand string.
10/02/14
20140293681
8t sram cell with one word line
An integrated circuit with sram cells containing dual passgate transistors and a read buffer, all connected to one word line is disclosed. The read buffer and one passgate transistor may be variously configured to a separate read data line and write data line, or a combined data line, in different embodiments.
10/02/14
20140293104
Comparator, solid-state imaging device, electronic apparatus, and driving method
A comparator includes: a first amplifying unit that includes a differential pair configured with a pair of transistors which are first and second transistors, and amplifies a difference of signals input to each of the gate electrodes of the first and second transistors, to output; a second amplifying unit that amplifies the signal output from the first amplifying unit; a first condenser that is disposed between a gate electrode of the first transistor and a reference signal supply unit; a second condenser that is disposed between a gate electrode of the second transistor and a pixel signal wiring; a third transistor that connects a connection point of the gate electrode of the first transistor and the first condenser to the pixel signal wiring; and a fourth transistor that connects a connection point of the gate electrode of the second transistor and the second condenser to the pixel signal wiring.. .


Popular terms: [SEARCH]

Transistors topics: Transistors, Semiconductor, Semiconductor Device, Integrated Circuit, High Speed, Photodiode, Memory Effect, Silicon Nitride, Enhancement, Ion Implant, Ion Channel, Interrupted, Reference Voltage, Semiconductor Devices, Semiconductor Substrate

Follow us on Twitter
twitter icon@FreshPatents

###

This listing is a sample listing of patent applications related to Transistors for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Transistors with additional patents listed. Browse our RSS directory or Search for other possible listings.
     SHARE
  
         


FreshNews promo



0.4612

3616

1 - 1 - 77