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 Imaging element, gain control method, program, and electronic device patent thumbnailImaging element, gain control method, program, and electronic device
The present disclosure relates to an imaging element, a gain control method, a program, and an electronic device that can capture an image with a high image quality or a high dynamic range with lower power consumption. The imaging element includes: an a/d conversion unit configured to a/d-convert a pixel signal outputted from a pixel; and a reference signal generation unit.
Sony Corporation


 Integrated circuit power rail multiplexing patent thumbnailIntegrated circuit power rail multiplexing
An integrated circuit (ic) is disclosed herein for power management through power rail multiplexing. In an example aspect, an ic includes a first power rail, a second power rail, and a load power rail.
Qualcomm Incorporated


 Boosting amplifier gain without clipping signal envelope patent thumbnailBoosting amplifier gain without clipping signal envelope
Disclosed is a circuit having a differential stage comprising a pair or transistors. The transistors are biased by respective bias transistors.
Qualcomm Incorporated


 Bias circuit for low quiescent current amplifier patent thumbnailBias circuit for low quiescent current amplifier
A bias circuit for applying bias current to a low quiescent current amplifier includes first and second transistors and a transistor pair circuit. The first transistor is connected to a supply bias voltage source and an auxiliary bias voltage source, and is controlled by a bias voltage output from the auxiliary bias voltage source, the first transistor acting as a current source.
Avago Technologies General Ip (singapore) Pte. Ltd.


 Circuit with current sharing alternately switched parallel transistors patent thumbnailCircuit with current sharing alternately switched parallel transistors
Paralleled igbts are controlled such that current is alternately switched through each of the two paralleled igbt to reduce conduction and switch losses on each igbt.. .
Hamilton Sundstrand Corporation


 Efficient voltage conversion patent thumbnailEfficient voltage conversion
An apparatus for providing on-chip voltage-regulated power includes a switched capacitor voltage conversion circuit that receives an elevated power demand signal and operates at a base rate when the elevated power demand signal is not active and at an elevated rate when the elevated power demand signal is active. The switched capacitor voltage conversion circuit comprises an auxiliary set of transistors that are disabled, when the elevated power demand signal is not active and enabled, when the elevated power demand signal is active.
International Business Machines Corporation


 Battery protection system with reference voltage control system patent thumbnailBattery protection system with reference voltage control system
A programmable battery protection system. Implementations may include: a battery and a battery protection integrated circuit (ic) coupled with the battery that includes a reference voltage circuit, a variable resistor circuit coupled with the reference voltage circuit, and only two field effect transistors (fets) coupled with the overcurrent detection circuit and with the battery.
Semiconductor Components Industries, Llc


 Automatically programmable battery protection system and related methods patent thumbnailAutomatically programmable battery protection system and related methods
A programmable battery protection system. Implementations may include: a battery, only two field effect transistors (fets), and a battery protection integrated circuit (ic).
Semiconductor Components Industries, Llc


 Automatically programmable battery protection system and related methods patent thumbnailAutomatically programmable battery protection system and related methods
A programmable battery protection system. Implementations may include: a battery, only two field effect transistors (fets) coupled with the battery, and a battery protection integrated circuit (ic) coupled with the fets.
Semiconductor Components Industries, Llc


 Fluoroalkylfluorene derivatives patent thumbnailFluoroalkylfluorene derivatives
Wherein s1, s2, d and b1 have meanings given in the description that are useful as charge transport and emissive materials for the fabrication of electronic devices such as diodes, transistors, and photovoltaic devices.. .

Semiconductor device

The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode.
Semiconductor Energy Laboratory Co., Ltd.

Semiconductor device and manufacturing the same

In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including in, ga, and zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced.
Semiconductor Energy Laboratory Co., Ltd.

High doped iii-v source/drain junctions for field effect transistors

A semiconductor device includes a fin patterned in a substrate; a gate disposed over and substantially perpendicular to the fin; a pair of epitaxial contacts including a iii-v material over the fin and on opposing sides of the gate; and a channel region between the pair of epitaxial contacts under the gate including an undoped iii-v material between doped iii-v materials, the doped iii-v materials including a dopant in an amount in a range from about 1e18 to about 1e20 atoms/cm3 and contacting the epitaxial contacts.. .
Stmicroelectronics, Inc.

Facilitation of increased locking range transistors

transistors can be used for a variety of electronic-based applications. Therefore, transistor efficiency and performance is of importance.
City University Of Hong Kong

Localized fin width scaling using a hydrogen anneal

transistors including one or more semiconductor fins formed on a substrate. The one or more semiconductor fins are thinner in a channel region than in source and drain regions and have rounded corners.
Renesas Electronics Corporation

High doped iii-v source/drain junctions for field effect transistors

A semiconductor device includes a fin patterned in a substrate; a gate disposed over and substantially perpendicular to the fin; a pair of epitaxial contacts including a iii-v material over the fin and on opposing sides of the gate; and a channel region between the pair of epitaxial contacts under the gate comprising an undoped iii-v material between doped iii-v materials, the doped iii-v materials including a dopant in an amount in a range from about 1e18 to about 1e20 atoms/cm3 and contacting the epitaxial contacts.. .
Stmicroelectronics, Inc.

Enhancement mode field effect transistor with doped buffer and drain field plate

This disclosure relates to a novel approach towards enhancing the threshold voltage of an enhancement-mode field-effect-transistor (e-mode fet) using doped or polarization-graded buffer layers and utilizing drain-connected field plates to engineer peak fields. Enhancement-mode field effect transistors (e-mode fets) with doped buffer layers replacing conventional undoped buffer layers could enable larger threshold voltages, owing to higher capacitance from the back.
Ohio State Innovation Foundation

Leakage-free implantation-free etsoi transistors

A semiconductor device includes an extremely thin semiconductor-on-insulator substrate (etsoi) having a base substrate, a thin semiconductor layer and a buried dielectric therebetween. A device channel is formed in the thin semiconductor layer.
International Business Machines Corporation

Organic electroluminescent device and repairing method thereof

An organic electroluminescent device includes a substrate including a plurality of pixel regions each having a light emission region and an element region; a plurality of thin film transistors (tfts) including at least one switching tft and at least one driving tft in each element region; a planarization layer on the plurality of tfts; a first electrode on the planarization layer and including first to third portions connected to one another, wherein the first and second portions are at each pixel region, and the third portion is at a neighboring pixel region; an organic light emitting layer on the first electrode; and a second electrode on the organic light emitting layer, wherein an end of the third portion overlaps the driving tft of the neighboring pixel region.. .
Lg Display Co., Ltd.

Esd protection device with improved bipolar gain using cutout in the body well

An integrated circuit includes an nmos scr in which a p-type body well of the nmos transistor provides a base layer for a vertical npn layer stack. The base layer is formed by implanting p-type dopants using an implant mask which has a cutout mask element over the base area, so as to block the p-type dopants from the base area.
Texas Instruments Incorporated

Vertical cmos structure and method

A method for forming stacked, complementary transistors is disclosed. Selective deposition techniques are used to form a column having a lower portion that includes one type of semiconductor (e.g.
Taiwan Semiconductor Manufacturing Company, Ltd.

High mobility transistors

An integrated circuit containing an n-channel finfet and a p-channel finfet is formed by forming a first polarity fin epitaxial layer for a first polarity finfet, and subsequently forming a hard mask which exposes an area for a second, opposite, polarity fin epitaxial layer for a second polarity finfet. The second polarity fin epitaxial layer is formed in the area exposed by the hard mask.
Texas Instruments Incorporated

Operational amplifying circuit and liquid crystal panel drive device using the same

An operational amplifier circuit includes: a first differential amplifier section containing a p-type differential pair of p-type transistors; a second differential amplifier section containing an n-type differential pair of n-type transistors; an intermediate stage connected with outputs of the first and second differential amplifier sections and containing a first current mirror circuit of p-type transistors, and a second current mirror circuit of n-type transistors; and an output stage configured to amplify an output of the intermediate stage in power. The first differential amplifier section includes a first current source and a first capacitance between sources of the p-type transistors of the p-type differential pair and a positive side power supply voltage.
Renesas Electronics Corporation

Organic light emitting display device and driving method therefor

An organic light emitting display device includes: pixels including driving transistors positioned in regions divided by scan lines and data lines; a data accumulating unit arranged to accumulate first data; a first storage unit storing current and voltage change information corresponding to a degradation of an organic light emitting diode (oled); a second storage unit storing a compensation value corresponding at least partially to channel length modulation of the driving transistors; and a timing controller programmed to carry out an altering of first data corresponding to an ith pixel so as to generate second data to be supplied to the ith pixel, the altering carried out according to: accumulation stress information for the ith pixel, the accumulation stress information corresponding to the accumulated first data and being stored in the data accumulating unit, the current and voltage change information, and a compensation value corresponding to the ith pixel.. .
Samsung Display Co., Ltd.

Shift register using oxide transistor and display device using the same

Disclosed is a shift register which is an embedded shift register using an oxide transistor is capable of improving output performance, operation range and output stability, and a display device using the same. In the shift register, each stage includes at least two light shielding layers individually overlapped with the transistors of the stage by dividing the transistors into at least two regions, and a connection transistor selectively applying a voltage to a first shielding layer overlapped with the pull-up transistor of the two light shielding layers to allow the first light shielding layer to float..
Lg Display Co., Ltd.

Wires replacing transistors enabling light speed

Majority vote function, approximation function or data formatting function, as a supplement to verification function, allowing access to universal logic possibilities.. .

In-cell multi-touch display panel system

An in-cell multi-touch display panel system includes a multi-touch lcd panel and a touch display control subsystem. The multi-touch lcd panel has a tft layer, a detection electrode layer, and a common-voltage and touch-driving layer.
Orise Technology Co., Ltd.

Multiple voltage identification (vid) power architecture, a digital synthesizable low dropout regulator, and improving reliability of power gates

Described is an apparatus comprising: first and second processing cores; and a pcu which is operable to: generate a first vid for an off-die regulator external to the apparatus, the first vid resulting in a first power supply for the first processing core; and generate a second vid different from the first vid, the second vid resulting in a second power supply for the second processing core. Described is an apparatus comprising: a plurality of power-gate transistors controllable by a digital bus, the plurality of power-gate transistors operable to provide a first power supply to a processing core, and to receive a second power supply as input; an adc to receive the first power supply and to generate a digital output representative of the first power supply; and a controller to receive the digital output representative and to generate the digital bus for controlling the plurality of power-gate transistors..
Intel Corporation

Large area, low-defect gallium-containing nitride crystals, making, and use

An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators..
Soraa, Inc.

Image sensor

An image sensor includes pixels arranged in 1×2 sharing manner by which two neighboring pixels of a same column form a pixel group. Two neighboring bit lines are connected to a multiplexer, and the output of the multiplexer is connected to a readout circuit.
Himax Imaging Limited

Active pixel image sensor operating in global shutter mode, subtraction of the reset noise and non-destructive read

An active pixel image sensor comprising a matrix of pixels organized in rows and columns and a read circuit comprising a distinct read pathway for each column of pixels, comprises: a photodiode, a storage node, a transfer transistor, a storage node reset transistor, a row select transistor and a transistor mounted as voltage follower; each read pathway comprises a subtraction block connected to receive, first, voltage at the terminals of the storage node of a pixel of the corresponding column and, second, a reference voltage of value substantially equal to the reset voltage of the pixels of the matrix seen at the input of the read pathway; the sensor comprises a controller for driving the transistors of pixels and the read circuit to perform an image acquisition in global shutter mode with subtraction of the reset noise and non-destructive reading of the pixels. A method for acquiring images is provided..
Pyxalis

Driver circuit, display device including the driver circuit, and electronic appliance including the display device

An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor.
Semiconductor Energy Laboratory Co., Ltd.

Resonant virtual supply booster for synchronous digital circuits having a predictable evaluate time

A booster for a digital circuit block provides speed and reliability at lower static power supply voltages, reducing overall power consumption of the circuits. The booster includes a transistor that couples a dynamic power supply node to a static power supply and is disabled in response to a boost clock.
International Business Machines Corporation

Resonant virtual supply booster for synchronous digital circuits having a predictable evaluate time

A booster for a digital circuit block provides speed and reliability at lower static power supply voltages, reducing overall power consumption of the circuits. The booster includes a transistor that couples a dynamic power supply node to a static power supply and is disabled in response to a boost clock.
International Business Machines Corporation

Two-transistor devices for protecting circuits from sustained overcurrent

Two-transistor devices protect electrical circuits from sustained overcurrent conditions. Some cases provide normally-on depletion mode transistors biased into enhancement mode for lower impedance during normal current conditions, and then the transistors are biased into blocking depletion mode during sustained overcurrent conditions to block the current to the circuit.
Symptote Technologies, Llc

Battery short-circuit protection circuit

This invention involves a battery short-circuit protection circuit installed in a battery-load circuit. In the battery-load circuit, there is a battery and a load rl.
Hefei University Of Technology

Laser driver with variable resistor and variable capacitance element, and optical transmitter including the same

A laser driver includes a differential amplifier and a driver. The differential amplifier includes a first series circuit and a second series circuit each including a resistor, a transistor, and a current source that are connected in series to each other, a variable resistor connected between emitters of the transistors, and a variable capacitance element connected in parallel to the variable resistor.
Sumitomo Electric Industries, Ltd.

Organic electronic compositions and device thereof

The present invention relates to organic electronic devices, and more specifically to organic field effect transistors, comprising a dielectric layer that comprises a polycycloolefinic polymer with an olefinic side chain.. .
Merck Patent Gmbh

Monolithic integration of high voltage transistors & low voltage non-planar transistors

High voltage transistors spanning multiple non-planar semiconductor bodies, such as fins or nanowires, are monolithically integrated with non-planar transistors utilizing an individual non-planar semiconductor body. The non-planar fets may be utilized for low voltage cmos logic circuitry within an ic, while high voltage transistors may be utilized for high voltage circuitry within the ic.
Intel Corporation

Source/drain regions for high electron mobility transistors (hemt) and methods of forming same

An embodiment high electron mobility transistor (hemt) includes a gate electrode over a semiconductor substrate and a multi-layer semiconductor cap over the semiconductor substrate and adjacent the gate electrode. The multi-layer semiconductor cap includes a first semiconductor layer and a second semiconductor layer comprising a different material than the first semiconductor layer.
Taiwan Semiconductor Manufacturing Company, Ltd.

Fabrication of single or multiple gate field plates

A process for fabricating single or multiple gate field plates using consecutive steps of dielectric material deposition/growth, dielectric material etch and metal evaporation on the surface of a field effect transistors. This fabrication process permits a tight control on the field plate operation since dielectric material deposition/growth is typically a well controllable process.
Cree, Inc.

Imaging device and electronic device

An imaging device capable of obtaining high-quality imaging data is provided. The imaging device can correct variation in the threshold voltage of amplifier transistors included in pixel circuits.
Semiconductor Energy Laboratory Co., Ltd.

Imaging device, electronic apparatus, and manufacturing imaging device

An imaging device includes: a photodiode configured to perform photoelectric conversion and to generate electric charge in accordance with an amount of received light; a floating diffusion section configured to accumulate the electric charge generated in the photodiode; a reading circuit configured to output a pixel signal having a voltage in accordance with a level of the electric charge accumulated in the floating diffusion section, the reading circuit including one or a plurality of transistors each having a gate that is electrically connected to a wiring used for selecting a pixel; and an insulating section extending into part or whole of a bottom surface of the floating diffusion section, part or whole of bottom surfaces of source-drain regions in the one or the plurality of transistors, or both. The photodiode, the floating diffusion section, the reading circuit, and the insulating section are provided in a semiconductor layer..
Sony Corporation

Display device

A display device according to one aspect of the present invention includes a plurality of scanning lines (10a) and a plurality of signal lines (11a); a plurality of pixel thin-film transistors; a common scanning interconnect (10b); and a plurality of protective diodes (6) (protective elements). At least a part of a plurality of connecting interconnects that electrically connect the common scanning interconnect with the plurality of protective diodes are constituted by connecting interconnects (11e) on the same layer as the signal lines.
Sharp Kabushiki Kaisha

Semiconductor device including different orientations of memory cell array and peripheral circuit transistors

A memory device includes a memory cell on a first region of a substrate. An active region is in a second region neighboring the first region of the substrate, and an extension direction of the active region has an acute angle with the <110> direction of the substrate.
Samsung Electronics Co., Ltd.

Transistors having offset contacts for reduced off capacitance

Systems, apparatuses and methods for reduced off capacitance in switching devices are disclosed. A transistor stack includes first and second doped regions serving as a source and drain, respectively of a transistor, an elongated gate structure including a first gate structure disposed between the first and second regions and serving as a gate of the transistor, a first set of electrical contact pads disposed on the first region, and a second set of electrical contact pads disposed on the second region, the second set of contact pads having an offset position with respect to the first set of contact pads in a longitudinal direction of the first and second regions..
Skyworks Solutions, Inc.

Electronic circuits including diode-connected bipolar junction transistors

A diode-connected bipolar junction transistor includes a common collector region of a first conductivity, a common base region of a second conductivity disposed over the common collector region, and a plurality of emitter regions of the first conductivity disposed over the common base region, arranged to be spaced apart from each other, and arranged to have island shapes. The common base region and the common collector region are electrically coupled to each other..
Sk Hynix Inc.

Circuit and an integrated circuit including a transistor and another component coupled thereto

A circuit can include a transistor coupled to a resistor or a diode. In an embodiment, the circuit can include a pair of transistors arranged in a cascode configuration, and each of the transistors can have a corresponding component connected in parallel.
Semiconductor Components Industries, Llc

Cascode configured semiconductor component

In accordance with an embodiment, a cascode connected semiconductor component and a method for manufacturing the cascode connected semiconductor component are provided. The cascode connected semiconductor component has a pair of silicon based transistors, each having a body region, a gate region over the body region, a source region and a drain.
Semiconductor Components Industries, Llc

Non-volatile memory device for reducing bit line recovery time

Methods and apparatuses are contemplated herein for reducing bit-line recovery time of nonvolatile memory devices. In an example embodiment, a nonvolatile memory device comprises a 3d array of non-volatile memory cells, including a plurality of blocks, each block comprising a plurality of nand strings, each of the nand strings coupled to a bit line and word lines, the word lines arranged orthogonally to the nand strings and establishing the memory cells at cross-points between surfaces of the nand strings and the word lines, and a first set of discharge transistors positioned at an edge of the 3d array, coupled to a corresponding bit line, and configured for bl discharge, and a second set of discharge transistors positioned such that a first portion of bl potential is discharged through the first set of discharge transistors and a second portion through the second set..
Macronix International Co., Ltd.

Shift register unit and driving method thereof, gate driving circuit and display device

A shift register unit includes input, output, restoration, reset, reset reinforce, reset reinforce control, and energy storage modules. The input, output, restoration and energy storage modules are connected to a first node.
Hefei Boe Optoelectronics Technology Co., Ltd.

Display device and driving same

Based on the results of detection of characteristics of drive transistors and organic el elements, a control circuit finds magnitudes of threshold shifts of the drive transistors and the organic el elements. A power supply voltage control unit sets a value of a low-level power supply voltage to a value lower, by a voltage value corresponding to an average value of the magnitudes of the threshold shifts for all pixels, than a value at an initial point in time.
Sharp Kabushiki Kaisha



Transistors topics:
  • Transistors
  • Semiconductor
  • Semiconductor Device
  • Integrated Circuit
  • High Speed
  • Photodiode
  • Memory Effect
  • Silicon Nitride
  • Enhancement
  • Ion Implant
  • Ion Channel
  • Interrupted
  • Reference Voltage
  • Semiconductor Devices
  • Semiconductor Substrate


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