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Transistors patents



      

This page is updated frequently with new Transistors-related patent applications.




Date/App# patent app List of recent Transistors-related patents
04/07/16
20160100464 
 Ac-powered led light engine patent thumbnailAc-powered led light engine
Ac led light engines powered directly from the ac power line contain circuitry of resistors, capacitors, diodes and transistors which enables an array of leds to efficiently produce light with a relatively low level of flicker as perceived by the human eye. The leds are driven by a current which is alternately capacitively limited and resistively-limited.

04/07/16
20160100117 
 Da converter, solid-state imaging device, driving  solid-state imaging device, and electronic apparatus patent thumbnailDa converter, solid-state imaging device, driving solid-state imaging device, and electronic apparatus
Disclosed is a digital-analog converter including a current generation section, a current source transistor bias voltage keeping section, a cascade transistor group switch section, and a conversion section. The current generation section has at least one current source transistor group including a plurality of current source transistors and generates an output current based on a value of a digital input signal.
Sony Corporation


04/07/16
20160099820 
 Circuits and methods for wireless transmitters patent thumbnailCircuits and methods for wireless transmitters
Circuits comprising: digital-to-amplitude converter (dac), comprising: binary weighted switching transistors (bwsts), each having gate coupled to amplitude control bit acb, and wherein the drain of each of the bwsts are connected together and wherein the source of each of the bwsts are connected together; transistor m1 having gate coupled to input signal and first bias voltage bv1 and source coupled to the drains of the bwsts; transistor m2 having gate coupled to bv2 and source coupled to the drain of m1; transistor m3 having gate coupled to bv3 and source coupled to the drain of m2; transistor having gate coupled to bv4, source coupled to the drain of m3; and inverter having input coupled to another acb and having output coupled to the output of the dac and the drain of m4.. .

04/07/16
20160099715 
 Level shift circuit and semiconductor device patent thumbnailLevel shift circuit and semiconductor device
A level shift circuit includes: a latch circuit (q5, q6, q7, q8) including first (q5, q7) and second (q6, q8) inverter circuits; a first input mos transistor (q1) operating in accordance with an input signal; a second input mos transistor (q2) operating in accordance with an inversion signal of the input signal; and a current-voltage control mos transistor (q9). The latch circuit (q5, q6, q7, q8) outputs a voltage having been converted from the input voltage in level.
Renesas Electronics Corporation


04/07/16
20160099707 
 Circuit with a plurality of transistors and  controlling such a circuit patent thumbnailCircuit with a plurality of transistors and controlling such a circuit
A circuit includes a transistor circuit including a first node, a second node, and a plurality of transistors coupled in parallel between the first node and the second node. The circuit further includes a drive circuit configured to switch on a first group of the plurality of transistors, the first group including a first subgroup and a second subgroup and each of the first subgroup and the second subgroup including one or more of the transistors.
Infineon Technologies Austria Ag


04/07/16
20160099692 
 High gain, high slew rate amplifier patent thumbnailHigh gain, high slew rate amplifier
In an example embodiment, an amplifier having high gain and high slew rate is provided and includes a pair of input transistors to which input voltage is applied, a pair of diode-connected loads coupled to the input transistors, at least one pair of current sources coupled to the diode-connected loads, and a bias control configured to turn off the at least one pair of current sources to enable high slew rate for the amplifier and to turn on the at least one pair of current sources to enable high gain for the amplifier. In specific embodiments, the current sources include transistors, the bias control controls a bias voltage to the current sources, and the bias voltage is driven to the supply voltage (vdd) to turn off the current sources..
Analog Devices Technology


04/07/16
20160099679 
 Switching current source radio frequency oscillator patent thumbnailSwitching current source radio frequency oscillator
A novel and useful rf oscillator suitable for use in applications requiring ultra-low voltage and power. The oscillator structure, employing alternating current source transistors, combines the benefits of low supply voltage operation of conventional nmos cross-coupled oscillators together with high current efficiency of the complementary push-pull oscillators.

04/07/16
20160099665 
 Dynamic igbt gate drive for vehicle traction inverters patent thumbnailDynamic igbt gate drive for vehicle traction inverters
A hybrid electric vehicle includes a traction battery, traction motor and power inverter therebetween. The power inverter converts the dc power of the traction battery to ac power to drive each phase of the traction motor.
Ford Global Technologies, Llc


04/07/16
20160099412 
 N-type organic semiconductor formulations and devices patent thumbnailN-type organic semiconductor formulations and devices
The present invention discloses an organic semiconductor formulation comprising an organic semiconductor (osc) and an organic phosphorous-containing additive (opa) capable of enhancing the n-type performance of the organic semiconductor. The semiconductor formulation disclosed herein is suitable for producing n-type semiconductor thin films for use in a variety of electronic, optical, or optoelectronic devices such as organic thin film transistors, organic photovoltaics, and organic light emitting devices..

04/07/16
20160099355 
 Non-volatile memory devices with thin-film and mono-crystalline silicon transistors patent thumbnailNon-volatile memory devices with thin-film and mono-crystalline silicon transistors
A non-volatile memory device combines thin-film transistor-based memory cells with bulk mono-crystalline silicon transistors, which can more efficiently drive bit lines for fast sensing of the stored data in the thin-film memory cells.. .
Schiltron Corporation


04/07/16
20160099354 

Recessed transistors containing ferroelectric material


Some embodiments include transistor constructions having a first insulative structure lining a recess within a base. A first conductive structure lines an interior of the first insulative structure, and a ferroelectric structure lines an interior of the first conductive structure.
Micron Technology, Inc.


04/07/16
20160099344 

Facilitating fabricating gate-all-around nanowire field-effect transistors


Methods are presented for facilitating fabrication of a semiconductor device, such as a gate-all-around nanowire field-effect transistor. The methods include, for instance: providing at least one stack structure including at least one layer or bump extending above the substrate structure; selectively oxidizing at least a portion of the at least one stack structure to form at least one nanowire extending within the stack structure(s) surrounded by oxidized material of the stack structure(s); and removing the oxidized material from the stack structure(s), exposing the nanowire(s).
Globalfoundries Inc.


04/07/16
20160099339 

Novel embedded shape sige for strained channel transistors


An integrated circuit die includes a silicon substrate. Pmos and nmos transistors are formed on the silicon substrate.
Stmicroelectronics, Inc.


04/07/16
20160099310 

Semiconductor device integrating high and low voltage devices


The present invention is directed to a method for forming multiple active components, such as bipolar transistors. Mosfets, diodes, etc., on a semiconductor substrate so that active components with higher operation voltage may be formed on a common substrate with a lower operation voltage device and incorporating the existing proven process flow of making the lower operation voltage active components.
Alpha & Omega Semiconductor Incorporated


04/07/16
20160099305 

Integrated circuitry and methods of forming transistors


Some embodiments include integrated circuits having first and second transistors. The first transistor is wider than the second transistor.
Micron Technology, Inc.


04/07/16
20160099297 

Flexible active matrix display


High resolution active matrix structures are fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor devices is formed using a semiconductor-on-insulator substrate.
Globalfoundries Inc.


04/07/16
20160099262 

Hybrid pixel control circuits for light-emitting diode display


An electronic device may include a display. The display may be formed by an array of light-emitting diodes mounted to the surface of a substrate.
Apple Inc.


04/07/16
20160099247 

Semiconductor devices with capacitors


A semiconductor device includes bottom electrodes two-dimensionally arranged on a substrate and transistors connected to the bottom electrodes, respectively. Each of the bottom electrodes may include first side surfaces facing each other in a first direction and second side surfaces facing each other in a second direction crossing the first direction.

04/07/16
20160099184 

Semiconductor chip and estimating capability of semiconductor manufacturing system


A method of estimating the capability of a semiconductor manufacturing system is provided. Plural first transistors are formed and a first vtmm value and a first scale value are obtained.
United Microelectronics Corp.


04/07/16
20160099063 

Semiconductor device


A semiconductor device includes memory strings each including a drain select transistor, memory cells and a source select transistor, which are connected between a bit line and a common source line and suitable for operating based on voltages applied to a drain select line, word lines and a source select line, respectively, and an operation circuit suitable for performing a pre-program operation, an erase operation and a post-program operation on the memory strings. The operation circuit sequentially performs erase operations on the drain select transistors included in the memory strings..
Sk Hynix Inc.


04/07/16
20160099033 

Column decoder circuitry for a non-volatile memory


A memory includes a column decoder performing at least two levels of decoding using a first level decoder that decodes between the column bit lines and first level decode lines and a second level decoder that decodes between the first level decode lines and second level decode lines. The second level decoder includes first transistors coupled between the first level decode lines and read output lines and second transistors coupled between the first level decode lines and write input lines.
Stmicroelectronics S.r.l.


04/07/16
20160098965 

Display having vertical gate line extensions and minimized borders


A display may have an array of pixels arranged in rows and columns. Each pixel may have a transistor for controlling the amount of output light associated with that pixel.
Apple Inc.


04/07/16
20160098960 

Organic light emitting display device and transistor structure for the same


Disclosed are a transistor structure for a display and an organic light emitting display device. The transistor structure includes: a voltage line positioned in one direction and configured to supply voltage to pixels; and two or more transistors which share one of drains and sources which are formed integrally with the voltage line and respectively include the other of the drains and sources which are individually formed and connected with different nodes directly or through a connection pattern..
Lg Display Co., Ltd.


04/07/16
20160098144 

Display having vertical gate line extensions and touch sensor


A display may have an array of pixels arranged in rows and columns. Each pixel may have a transistor for controlling the amount of output light associated with that pixel.
Apple Inc.


04/07/16
20160098077 

Electronic control unit


An electronic control unit includes a microcomputer, a monitoring unit, a clock-generating oscillator circuit, a first power circuit supplying power to the microcomputer, and a second power circuit supplying power to the monitor microcomputer. The first power circuit includes a first switching power source including a first transistor and a first series power source including a second transistor.
Toyota Jidosha Kabushiki Kaisha


04/07/16
20160098050 

Voltage regulator, application-specific integrated circuit and providing a load with a regulated voltage


A voltage regulator for digital loads combines a closed loop regulation circuit with an open loop topology. A transistor and a bank of transistors share the same voltage source vdd and gate control current.
Freescale Semiconductor, Inc.


04/07/16
20160097805 

In-die transistor characterization in an ic


In an example implementation, an integrated circuit (ic) includes: a plurality of transistors disposed in a plurality of locations on a die of the ic; conductors coupled to terminals of each of the plurality of transistors; a digital-to-analog converter (dac), coupled to the conductors, to drive voltage signals to the plurality of transistors in response to a digital input; and an analog-to-digital converter (adc), coupled to at least a portion of the conductors, to generate samples in response to current signals induced in the plurality of transistors in response to the voltage signals, the samples being indicative of at least one electrostatic characteristic for the plurality of transistors.. .
Xilinx, Inc.


03/31/16
20160094229 

Chip and identifying a chip


A chip includes a logic circuit which has a plurality of transistors and is configured to carry out a logical data processing function, the transistors being operated in a first direction when carrying out the data processing function, and a readout circuit which is configured to control the logic circuit in such a manner that the transistors are operated in a second direction opposite the first direction and is configured to determine an identification of the logic circuit on the basis of an output from the logic circuit when operating the transistors in the second direction.. .
Infineon Technologies Ag


03/31/16
20160094226 

Power switch control between usb and wireless power system


An electrical system can selectively power a load via a usb connection or via another power source, such as a wireless power transfer path. An integrated switch controller determines whether to power the load via the usb connection or the other power sources and controls two external transistors via a single i/o pin connection to implement that determination.

03/31/16
20160094224 

Logic circuit, semiconductor device, electronic component, and electronic device


A drive capability of a dynamic logic circuit is improved. A logic circuit includes a dynamic logic circuit, a first output node, a first transistor that is diode-connected, and a capacitor.
Semiconductor Energy Laboratory Co., Ltd.


03/31/16
20160094217 

Driver circuit including driver transistors with controlled body biasing


A drive circuit includes a first drive transistor coupled between a first supply node and an output pad of an integrated circuit and a second drive transistor coupled between a second supply node and the output pad. The first drive transistor and second drive transistors are controlled by a control signal.
Stmicroelectronics International N.v.


03/31/16
20160094210 

Driver device for transistors, and corresponding integrated circuit


A driver device is for switching on and off a transistor for supplying a load by driving a control electrode of the transistor. The driver device includes a first terminal connected to the control electrode of the transistor, a second terminal connected between the transistor and the load, and a current-discharge path coupled to the first terminal.
Stmicroelectronics S.r.l.


03/31/16
20160094184 

Schottky enhanced bias circuit


Embodiments disclosed herein relate to a bias circuit that uses schottky diodes. Typically, a bias circuit will include a number of transistors used to generate a bias voltage or a bias current for a power amplifier.
Skyworks Solutions, Inc.


03/31/16
20160094137 

Soft transition on all switching elements two transistors forward converter


A method is shown to improve any forward topology operation to achieve efficient resonant transitions by actively shorting the magnetizing inductance and release the short at another time thus producing lower switching losses independent of frequency. In another embodiment of this invention the current from the output inductor is allowed to go negative before the freewheeling synchronous rectifier is turned off, pushing the current back into the primary to create a soft transition across the switching elements before they are turned on.
Rompower Energy Systems, Inc.


03/31/16
20160093718 

Semiconductor structures and fabrication method thereof


A method is provided for fabricating transistors. The method includes providing a semiconductor substrate.
Semiconductor Manufacturing International (shanghai) Corporation


03/31/16
20160093696 

Integrated circuit comprising components, for example nmos transistors, having active regions with relaxed compressive stresses


An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the substrate limited by an insulating region. To address compressive stress in the active region, the circuit further includes at least one electrically inactive trench located at least in the insulating region and containing an internal area configured to reduce compressive stress in the active region.
Stmicroelectronics (rousset) Sas


03/31/16
20160093676 

Display panel and manufacturing the same


A display panel includes an array substrate including a thin film transisitors array, a lighting device formed on a surface of the array substrate where the thin film transistors array is formed to emit a backlight, and a color conversion layer formed on a side of the array substrate opposite to the lighting device. The display panel defines a number of pixel areas, each of the pixel areas includes at least three sub-pixels to correspondingly emit lights with three-primary colors.
Ye Xin Technology Consulting Co., Ltd.


03/31/16
20160093674 

Memory device


According to one embodiment, a memory device includes a first active area, formed on the substrate, which extends in a third direction. The memory device also includes three gate electrodes, provided on the first active area, which extend in a second direction intersecting the third direction.
Kabushiki Kaisha Toshiba


03/31/16
20160093653 

Solid-state imaging device and manufacturing solid-state imaging device, and electronic device


A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.. .
Sony Corporation


03/31/16
20160093633 

Semiconductor memory device and manufacturing method thereof


A semiconductor memory device includes a plurality of memory cell transistors that are formed above a semiconductor substrate and are connected to each other in series, first and second selection transistors formed respectively on either side of the memory cell transistors above the semiconductor substrate, a source line contact formed adjacent the first selection transistor and having a bottom thereof in contact with the semiconductor substrate, and a bit line contact formed adjacent the second selection transistor and having a bottom thereof in contact with the semiconductor substrate at a position higher than the bottom of the source line contact.. .
Kabushiki Kaisha Toshiba


03/31/16
20160093631 

Memory devices and methods of fabricating the same


A memory device includes a substrate having common source regions thereon, common source lines extending along a surface of the substrate and contacting the common source regions, respectively, and channel structures extending away from the surface of the substrate between the common source lines. The common source lines define a unit cell of the memory device therebetween.

03/31/16
20160093629 

Nonvolatile memory cell with improved isolation structures


An array of floating gate transistors of a non-volatile memory, nvm, cell includes floating gate transistors separated from one another by high-concentration dopant impurity regions and without using shallow trench isolation (sti) or field oxide (fox) isolation structures. The array is formed over a substrate portion that includes a continuous and planar upper surface.
Wafertech, Llc


03/31/16
20160093628 

Memory device, memory cell and memory cell layout


A memory device includes at least one memory cell. The memory cell includes first and second transistors, and first and second capacitors.
Taiwan Semiconductor Manufacturing Company, Ltd.


03/31/16
20160093623 

Two-transistor sram semiconductor structure and methods of fabrication


A two-transistor memory cell based upon a thyristor for an sram integrated circuit is described together with a process for fabricating it. The memory cell can be implemented in different combinations of mos and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation.
Kilopass Technology, Inc.


03/31/16
20160093622 

Cross-coupled thyristor sram semiconductor structures and methods of fabrication


A memory cell based upon thyristors for an sram integrated circuit is described together with a process for fabricating it. The memory cell can be implemented in different combinations of mos and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation.
Kilopass Technology, Inc.


03/31/16
20160093607 

Six-transistor sram semiconductor structures and methods of fabrication


A two-transistor memory cell based upon a thyristor for an sram integrated circuit is described together with a process for fabricating it. The memory cell can be implemented in different combinations of mos and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation.
Kilopass Technology, Inc.


03/31/16
20160093536 

Integrated circuit having plural transistors with work function metal gate structures


The present invention provides an integrated circuit including a substrate, a first transistor, a second transistor and a third transistor. The first transistor has a first metal gate including a first bottom barrier layer, a first work function metal layer and a first metal layer.
United Microelectronics Corp.


03/31/16
20160093511 

Multigate transistor device and isolating adjacent transistors in multigate transistor device using self-aligned diffusion break (sadb)


A multigate transistor device such as a fin-shaped field effect transistor (finfet) is fabricated by applying a self-aligned diffusion break (sadb) mask having an opening positioned to expose an area of at least one portion of at least one gate stripe designated as at least one tie-off gate in the multigate transistor device and removing the tie-off gate through the opening of the sadb mask to isolate transistors adjacent to the tie-off gate.. .
Qualcomm Incorporated


03/31/16
20160093369 

Write assist sram circuits and methods of operation


A two-transistor memory cell based upon a thyristor for an sram integrated circuit is described together with methods of operation. The memory cell can be implemented in different combinations of mos and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation.
Kilopass Technology, Inc.


03/31/16
20160093368 

Six-transistor sram circuits and methods of operation


A two-transistor memory cell based upon a thyristor for an sram integrated circuit is described together with methods of operation. The memory cell can be implemented in different combinations of mos and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation.
Kilopass Technology, Inc.


03/31/16
20160093367 

Cross-coupled thyristor sram circuits and methods of operation


A memory cell based upon thyristors for an sram integrated circuit is described together with a process for fabricating it. The memory cell can be implemented in different combinations of mos and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation.
Kilopass Technology, Inc.


03/31/16
20160093362 

Two-transistor sram circuit and methods of fabrication


A two-transistor memory cell based upon a thyristor for an sram integrated circuit is described together with methods of operation. The memory cell can be implemented in different combinations of mos and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation.
Kilopass Technology, Inc.


03/31/16
20160093263 

Display device and driving method thereof


To provide a display device which can perform external correction in parallel with display operation. The display device includes a plurality of pixels arranged in a matrix and a plurality of reading circuits provided outside the pixels.
Semiconductor Energy Laboratory Co., Ltd.


03/31/16
20160092170 

Low area full adder with shared transistors


A full adder is disclosed that utilizes low area. The full adder includes an exclusive nor logic circuit.
Texas Instruments Incorporated


03/31/16
20160092027 

Touch sensing device and driving method thereof


A touch sensing device includes a panel including pixels disposed in a matrix form defined by data lines and gate lines, the pixels including thin film transistors (tfts). The touch sensing device includes at least one touch sensor having a mutual capacitance and a sensor driving circuit configured to receive an electric charge from the mutual capacitance.
Lg Display Co., Ltd.


03/31/16
20160090291 

Semiconductor device, display module, and electronic device


An object is to continuously apply voltage to a mems device using first to fifth or sixth transistors. One of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor.
Semiconductor Energy Laboratory Co., Ltd.


03/24/16
20160088246 

Solid-state imaging device and camera system


A solid-state imaging device and a camera system are disclosed. The solid-state imaging device includes a pixel unit and a pixel signal readout circuit.
Sony Corporation


03/24/16
20160087633 

Differential driver with pull up and pull down boosters


A driver includes first and second resistors coupled to a supply voltage and coupled to pairs of main transistors at positive and negative output nodes. The first and second pairs of main transistors provide emphasis and de-emphasis on the positive and negative output nodes.
Texas Instruments Incorporated


03/24/16
20160087627 

Output buffer, and source driver and display device including the same


Disclosed is an output buffer. The output buffer includes a first amplifier configured to amplify an input signal, and output first to fourth amplified signals according to results of the amplification, a first transistor to receive the first amplified signal, a second transistor to receive the second amplified signal, a third transistor to receive the third amplified signal, a fourth transistor to receive the fourth amplified signal, a first node, connected to drains of the first and second transistors, a second node, connected to drains of the third and fourth transistors, an output node connected to the first and second nodes, and a first controller configured to selectively supply a control voltage to the gates of the first to fourth transistors in response to a control signal..
Dongbu Hitek Co., Ltd.


03/24/16
20160087626 

Power control circuit


A power control circuit according to one embodiment includes an h-bridge circuit formed using a plurality of power transistors. The power transistors are respectively connected to current measurement circuits that measure currents flowing through the power transistors.
Renesas Electronics Corporation


03/24/16
20160087624 

High frequency switch circuit


A high frequency switch circuit including a first terminal, a second terminal, a bias terminal, n (n is an integer more than one) number of transistors connected in series in an order from a first transistor to an nth transistor from said first terminal to said second terminal, first to nth nodes respectively connected to back gates of said first to nth transistors, and n number of resistance elements connected in series in an order from a first resistance element to an nth resistance element from said bias terminal to said nth node, wherein said first resistance element is connected between said bias terminal and said first node, and a kth resistance element (k=2 to n) is connected between said (k−1)th node and said kth node.. .
Renesas Electronics Corporation


03/24/16
20160087623 

Gate driver


In a gate driver for driving a first transistor, the gate driver includes first, second and third push-pull circuits, in each of the push-pull circuits, two transistors are connected in series, an output terminal of the first push-pull circuit is connected to the gate of the first transistor, an output terminal of the second push-pull circuit is connected to the gate of a second transistor included in the first push-pull circuit and an output terminal of the third push-pull circuit is connected to the gate of a third transistor included in the first push-pull circuit.. .
Kyoto University


03/24/16
20160087621 

Integrated magnetic field sensor-controlled switch devices


Embodiments relate to integrated magnetic field sensor-controlled switch devices, such as transistors, current sources, and power switches, among others. In an embodiment, a magnetic switch and a load switch are integrated in a single integrated circuit device.
Infineon Technologies Ag


03/24/16
20160087588 

Packaged rf amplifier devices with grounded isolation structures and methods of manufacture thereof


An embodiment of a packaged rf amplifier device includes a device substrate, a transistor die coupled to the device substrate, and an isolation structure coupled to the transistor die. The transistor die has a top die surface, a bottom die surface, a semiconductor substrate, first and second transistors formed in the semiconductor substrate, a conductive structure at the top die surface and positioned between the first and second transistors, and a low resistance path that extends vertically through the semiconductor substrate between the conductive structure and the bottom die surface.
Freescale Semiconductor, Inc.


03/24/16
20160087230 

Soluble cyclic imides containing polymers as dielectrics in organic electronic applications


The present invention relates to an electronic device comprising a dielectric material, which dielectric material comprises a copolymer comprising styrene and maleimic acid and derivatives thereof as structural units, a process for the preparation of the electronic device and to the use of the copolymer as dielectric material, especially as dielectric layer in printed electronic devices such as capacitors and organic field-effect transistors.. .
Basf Se


03/24/16
20160087212 

Graphene nanoribbons as semiconductors for organic thin film transistors


Disclosed herein are graphene nanoribbons, controllable and reproducible methods of synthesizing graphene nanoribbons, and uses thereof. transistors containing graphene nanoribbons are also disclosed..
Empire Technology Development Llc


03/24/16
20160087088 

Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same


Methods of forming a transistor include providing a semiconductor epitaxial structure including a channel layer and barrier layer on the channel layer, forming a gate electrode on the barrier layer, etching the semiconductor epitaxial structure using the gate electrode as an etch mask to form a trench in the semiconductor epitaxial structure, and depositing a source metal in the trench. The trench extends at least to the channel layer, and the source metal forms a schottky junction with the channel layer.
Cree, Inc.


03/24/16
20160087073 

Bipolar junction transistors with an air gap in the shallow trench isolation


Device structures, fabrication methods, and design structures for a bipolar junction transistor. A trench isolation region is formed in a substrate.
Globalfoundries Inc


03/24/16
20160087055 

3d memory having nand strings switched by transistors with elongated polysilicon gates


A 3d nand memory has vertical nand strings across multiple memory planes above a substrate, with each memory cell of a nand string residing in a different memory layer. Word lines in each memory plane each has a series of socket components aligned to embed respective floating gates of a group memory cells.
Sandisk Technologies, Inc.


03/24/16
20160087022 

Silicon and semiconducting oxide thin-film transistor displays


An electronic device display may have an array of pixel circuits. Each pixel circuit may include an organic light-emitting diode and a drive transistor.
Apple Inc.


03/24/16
20160087021 

Light emitting element display device


A display device includes two or more transistors in one pixel, and the two or more transistors include a first transistor of which a channel semiconductor layer is polycrystalline silicon, and a second transistor of which a channel semiconductor layer is an oxide semiconductor.. .
Japan Display Inc.


03/24/16
20160086992 

Solid-state image pickup device, image pickup system using solid-state image pickup device, and manufacturing solid-state image pickup device


In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.. .
Canon Kabushiki Kaisha


03/24/16
20160086980 

Gan transistors with polysilicon layers used for creating additional components


A gan transistor with polysilicon layers for creating additional components for an integrated circuit and a method for manufacturing the same. The gan device includes an epi structure and an insulating material disposed over epi structure.
Efficient Power Conversion Corporation


03/24/16
20160086970 

Three-dimensional non-volatile nor-type flash memory


The present invention provides a design of three-dimensional non-volatile nor flash memory devices consisting of arrays of basic nor memory group in which individual memory cells (field-effect-transistors) are stacked along a direction (or directions) either out of or parallel to the plane of the substrate and electrically connected in parallel to achieve high storage densities approaching 1 tb with lower manufacturing cost. Offering full random access to every individual memory cells and also capability of parallel programming/erasing in blocks of memory cells, such three-dimensional non-volatile nor flash memory can be widely used for both executable-code storage and mass data storage applications..

03/24/16
20160086958 

Semiconductor device, electronic component, and electronic device


A semiconductor device has a function of storing data and includes an output terminal, a first terminal, a second terminal, a first circuit, and second circuits. The first circuit has a function of keeping the potential of the output terminal to be a high-level or low-level potential.
Semiconductor Energy Laboratory Co., Ltd.


03/24/16
20160086946 

Cmos device and manufacturing the same


An cmos device comprises a plurality of nmos transistors and a plurality of pmos transistors, each of which comprises a gate stack constituted of a gate insulating layer and a gate metal layer on a substrate, a source/drain region in the substrate on both sides of the gate stack and a channel region below the gate stack, wherein the gate metal layer of each nmos transistor comprising a first barrier layer, an nmos work function adjusting layer, a second barrier layer, and a filling layer, and wherein the gate metal layer of each pmos transistor comprising a first barrier layer, a pmos work function adjusting layer, an nmos work function adjusting layer, a second barrier layer, and a filling layer, and wherein the first barrier layer in the gate metal layer of the nmos transistor and the first barrier layer in the gate metal layer of the pmos transistor contain a doping ion to finely adjust the work function. The semiconductor device and the method for manufacturing the same according to the present disclosure utilize the sacrificial layer to diffuse impurity to the barrier layer so that the adjusting accuracy of the threshold voltage may be effectively improved, thereby facilitating in improving the whole performance of the device..
Institute Of Microelectronics, Chinese Academy Of Sciences


03/24/16
20160086863 

Semiconductor device for testing large number of devices and composing method and test method thereof


Provided is a method for testing a plurality of transistors of a semiconductor device. The method includes forming a plurality of elements or a plurality of logic using a front end of line (feol) process, forming a selection logic using at least one of the plurality of elements or the plurality of logic cells, connecting the selection logic and the plurality of transistors, forming a pad for connecting an input terminal of the selection logic and drain or source terminals of the plurality of transistors, and sequentially selecting the plurality of transistors using the selection logic and measuring an electrical characteristic of selected transistors among the plurality of transistors..

03/24/16
20160086860 

Methods for making robust replacement metal gates and multi-threshold devices in a soft mask integration scheme


A method of fabricating advanced multi-threshold field effect transistors using a replacement metal gate process. A first method includes thinning layers composed of multilayer film stacks and incorporating a portion of the remaining thinned film in some transistors.
Globalfoundries Inc.


03/24/16
20160086820 

Localized fin width scaling using a hydrogen anneal


transistors and methods for fabricating the same include annealing channel portions of one or more semiconductor fins that are uncovered by a protective layer in a gaseous environment to reduce fin width, to produce a fin profile that is widest at the bottom and tapers toward the top, and to round corners of the one or more semiconductor fins.. .
International Business Machines Corporation


03/24/16
20160086800 

Tunneling field effect transistors and transistor circuitry employing same


A p-channel tunneling field effect transistor (tfet) is selected from a group consisting of (i) a multi-layer structure of group iv layers and (ii) a multi-layer structure of group iii-v layers. The p-channel tfet includes a channel region comprising one of a silicon-germanium alloy with non-zero germanium content and a ternary iii-v alloy.
The Ohio State University


03/24/16
20160086676 

Method and system for improving the radiation tolerance of floating gate memories


A method of improving radiation tolerance of floating gate memories is provided herein. Floating gate memories can include a floating gate transistor or a block of floating gate transistors.
United States Of America As Represented By The Secretary Of The Navy


03/24/16
20160086655 

Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle


Methods of operating semiconductor memory devices with floating body transistors, using a silicon controlled rectifier principle are provided, as are semiconductor memory devices for performing such operations. A method of maintaining the data state of a semiconductor dynamic random access memory cell is provided, wherein the memory cell comprises a substrate being made of a material having a first conductivity type selected from p-type conductivity type and n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type; a second region having the second conductivity type, the second region being spaced apart from the first region; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer, the body region having the first conductivity type; and a gate positioned between the first and second regions and adjacent the body region.
Zeno Semiconductor, Inc.


03/24/16
20160086559 

Liquid crystal display device


A scanning line drive unit selects a plurality of scanning lines in order, and controls the operation of a thin-film transistors. A timing control unit controls the scanning line drive unit on the basis of a display signal that includes a horizontal synchronization signal, a vertical synchronization signal, and an image signal.
Sharp Kabushiki Kaisha


03/24/16
20160086534 

Active matrix led pixel driving circuit and layout method


A unit pixel driver circuit includes a capacitor configured to store a voltage corresponding to a desired pixel brightness and a control block. The control block may include a first, second third and fourth transistors, all of which are connected together, both in parallel and in series.
Kopin Corporation


03/24/16
20160085377 

Display device


A display device includes a display panel including data lines, gate lines crossing the data lines, and pixels arranged in a matrix form, a touch screen which is embedded in the display panel or is installed on the display panel, a data driving circuit supplying a data voltage to the data lines, a gate driving circuit supplying a gate pulse to the gate lines, and a touch sensing circuit which supplies a driving signal to lines of the touch screen and senses a touch input. The gate driving circuit alternately drives pull-down transistors connected in parallel to one gate line.
Lg Display Co., Ltd.


03/24/16
20160085256 

Body biasing for rf switch optimization


Switches comprising a number of transistors in series achieve improved performance through biasing the bodies of the transistors to lower the stack resistance in the on mode and optionally to also lower the stack capacitance in the off mode. These switches find use in rf applications such as phase shifters, step attenuators, and in antenna switches, for example.
Acco


03/17/16
20160081144 

Method of operating backlight unit and display device including backlight unit


Provided is a display device. According to one embodiment, the display device includes: a backlight unit with a plurality of light emitting strings including at least one light emitting diode; and a display panel displaying an image using light outputted from the backlight unit, wherein the backlight unit includes: a light source unit including the plurality of light emitting strings and a plurality of photo transistors controlling the plurality of light emitting strings; a dc-dc converter outputting the driving voltage to the light source unit; and a driving control unit applying activated gate voltages to turn on the plurality of photo transistors and detecting driving time differences between an output time for outputting the driving voltage and applying times for applying the gate voltages..
Samsung Display Co., Ltd.


03/17/16
20160080005 

Multi-mode multi-band self-realigning power amplifier


A power amplifier (pa) system is provided for multi-mode multi-band operations. The pa system includes one or more amplifying modules, each amplifying module including one or more banks, each bank comprising one or more transistors; and a plurality of matching modules, each matching module being configured to be adjusted to provide impedances corresponding to frequency bands and conditions.
Ethertronics, Inc.


03/17/16
20160079980 

Buffer circuit


A first logic inversion unit generates an input inversion signal and a buffer unit generates a signal having a same logic as that of the input inversion signal. The first logic inversion unit includes first and second mos transistors.
Kabushiki Kaisha Toshiba


03/17/16
20160079979 

Pulsed level shift and inverter circuits for gan devices


Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device.
Navitas Semiconductor Inc.


03/17/16
20160079978 

Level shift and inverter circuits for gan devices


Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device.
Navitas Semiconductor Inc.


03/17/16
20160079975 

Half bridge driver circuits


Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side gan device communicates through one or more level shift circuits with a high side gan device.
Navitas Semiconductor Inc.


03/17/16
20160079967 

Power semiconductor device and gate driver circuit


A power semiconductor device includes a first output transistor connected to a first node at a first end of a current path thereof. The power semiconductor device further includes a second output transistor connected to a second end of the current path of the first output transistor at a first end of a current path thereof and to a second node at a second end of the current path.
Kabushiki Kaisha Toshiba


03/17/16
20160079964 

Integrated level shifter


Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device.
Navitas Semiconductor, Inc.


03/17/16
20160079944 

Precision, high voltage, low power differential input stage with static and dynamic gate protection


A precision, high voltage, low power differential input stage including static and dynamic gate protection is disclosed herein. The differential input stage incorporates the performance of low voltage transistors with the high voltage capability of high voltage transistors.

03/17/16
20160079923 

Power amplifier


A power amplifier includes an input circuit configured to receive an input signal. At least two transistors connected in series.
Taiwan Semiconductor Manufacturing Company, Ltd.


03/17/16
20160079922 

Mixer circuit


A mixer circuit includes a single-ended to differential converter, first and second transistors, first to fourth inductive transmission lines, and a mixer. The first and second transistors receive a differential input voltage signal pair from the single-ended to differential converter and generate a differential input current signal pair.
National Chi Nan University


03/17/16
20160079869 

Clamping apparatus and method


A protection circuit protects transistors in a dc-dc conversion circuit from over voltages. The transistors in the conversion circuit include first and second transistors.
Continental Automotive Systems, Inc.


03/17/16
20160079853 

Integrated bias supply, reference and bias current circuits for gan devices


Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device.
Navitas Semiconductor Inc.


03/17/16
20160079844 

Half bridge power conversion circuits using gan devices


Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device.
Navitas Semiconductor Inc.


03/17/16
20160079785 

Bootstrap capacitor charging circuit for gan devices


Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device.
Navitas Semiconductor Inc.


03/17/16
20160079384 

Gate structure integration scheme for fin field effect transistors


In one embodiment, a semiconductor device is provided that includes a gate structure present on a channel portion of a fin structure. The gate structure includes a dielectric spacer contacting a sidewall of a gate dielectric and a gate conductor.
International Business Machines Corporation


03/17/16
20160079381 

Semiconductor chip including integrated circuit including at least five gate level conductive structures having particular spatial and electrical relationship and manufacturing the same


A semiconductor chip region includes a first conductive structure (cs) that forms a gate electrode (ge) of a first transistor of a first transistor type (tt) and a ge of a first transistor of a second tt, a second cs that forms a ge of a second transistor of the first tt, a third cs that forms a ge of a second transistor of the second tt, a fourth cs that forms a ge of a third transistor of the first tt, and a fifth cs that forms a ge of a third transistor of the second tt. Diffusion terminals of the first and second transistors of the first tt are electrically connected.
Tela Innovations, Inc.


03/17/16
20160079359 

High voltage field effect transistors


transistors suitable for high voltage and high frequency operation. A nanowire is disposed vertically or horizontally on a substrate.
Intel Corporation


03/17/16
20160079337 

Narrow border organic light-emitting diode display


An electronic device may be provided having an organic light-emitting diode display and control circuitry for operating the display. The display may include one or more display layers interposed between the control circuitry and a display layer having thin-film transistors.
Apple Inc.


03/17/16
20160079305 

Method of manufacturing semiconductor device


The semiconductor device has a plurality of photodiodes placed in array form on the main surface of a semiconductor substrate, a p+ type semiconductor region surrounding each photodiode in plan view, and a plurality of transistors placed between the direction-y adjacent photodiodes. A method of manufacturing the semiconductor device includes forming the p+ type semiconductor region by implanting a p type impurity into the semiconductor substrate through a mask layer opened at a p+ type semiconductor region formation region and implanting an n type impurity into the semiconductor substrate through the mask layer.

03/17/16
20160079277 

Fully-depleted silicon-on-insulator transistors


A fully-depleted silicon-on-insulator (fdsoi) semiconductor structure includes: a first pfet, a second pfet, and a third pfet each having a different threshold voltage and each being over an n-well that is biased to a first voltage; and a first nfet, a second nfet, and a third nfet each having a different threshold voltage and each being over a p-type substrate that is biased to a second voltage. The second voltage is different than the first voltage..
International Business Machines Corporation


03/17/16
20160079276 

Semiconductor chip including integrated circuit having cross-coupled transistor configuration and manufacturing the same


A first conductive structure forms gate electrodes of a first transistor of a first transistor type and a first transistor of a second transistor type. A second conductive structure forms a gate electrode of a second transistor of the first transistor type.
Tela Innovations, Inc.


03/17/16
20160079274 

Transistors, semiconductor constructions, and methods of forming semiconductor constructions


Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second segment of the channel region. The second electrically conductive gate portion is a different composition than the first electrically conductive gate portion.
Micron Technology, Inc.


03/17/16
20160079259 

Nonvolatile memory device


A nonvolatile memory device includes a memory cell array and a peripheral circuit. The peripheral circuit is connected to the memory cell array through conductive lines and includes transistors.

03/17/16
20160079250 

Non-volatile semiconductor memory device and manufacturing method thereof


This non-volatile semiconductor memory device includes a memory cell array including nand cell units formed in a first direction vertical to a surface of a semiconductor substrate. A local source line is electrically coupled to one end of the nand cell unit formed on the surface of the substrate.
Kabushiki Kaisha Toshiba


03/17/16
20160079237 

High voltage semiconductor power switching device


A three terminal high voltage darlington bipolar transistor power switching device includes two high voltage bipolar transistors, with collectors connected together serving as the collector terminal. The base of the first high voltage bipolar transistor serves as the base terminal.
Mosway Semiconductor Limited


03/17/16
20160079159 

Enforcement of semiconductor structure regularity for localized transistors and interconnect


A global placement grating (gpg) is defined for a chip level to include a set of parallel and evenly spaced virtual lines. At least one virtual line of the gpg is positioned to intersect each contact that interfaces with the chip level.
Tela Innovations, Inc.


03/17/16
20160079127 

Fully-depleted silicon-on-insulator transistors


A fully-depleted silicon-on-insulator (fdsoi) semiconductor structure includes: a first pfet, a second pfet, and a third pfet each having a different threshold voltage and each being over an n-well that is biased to a first voltage; and a first nfet, a second nfet, and a third nfet each having a different threshold voltage and each being over a p-type substrate that is biased to a second voltage. The second voltage is different than the first voltage..
International Business Machines Corporation




Transistors topics: Transistors, Semiconductor, Semiconductor Device, Integrated Circuit, High Speed, Photodiode, Memory Effect, Silicon Nitride, Enhancement, Ion Implant, Ion Channel, Interrupted, Reference Voltage, Semiconductor Devices, Semiconductor Substrate

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