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Transistors

Transistors-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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NEW Global shutter image sensor pixels having improved shutter efficiency
Semiconductor Components Industries, Llc
February 15, 2018 - N°20180048841

An image sensor may be provided with an array of image sensor pixels formed on a substrate having front and back surfaces. Each pixel may have a photodiode that receives light through the back surface, a floating diffusion node, a charge transfer gate, and first and second reset transistor gates. A source follower transistor may have a gate coupled to ...
NEW Solid-state image pickup device, method for controlling the same, and electronic apparatus
Sony Corporation
February 15, 2018 - N°20180048838

The present technique relates to a solid-state image pickup device capable of realizing low power consumption in a simpler configuration, a control method therefor, and an electronic apparatus. The solid-state image pickup device includes a pixel array section that has a plurality of pixels arranged two-dimensionally in a matrix shape, load transistors each of which configures a source follower circuit ...
NEW Multi-format driver interface
Microsemi Semiconductor Ulc
February 15, 2018 - N°20180048312

A multi-format signal driver interface has first, second and third pairs of transistors arranged in a back-to-back relationship. First transistors and second transistors of the first and second pairs of transistors form respective first and second parallel arrangement. The first transistors of the third pair of transistors are in series with the first parallel arrangement, and the second transistors of ...
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NEW Method and system for reliable bootstrapping switches
Maxlinear, Inc.
February 15, 2018 - N°20180048301

Methods and systems for reliable bootstrapping switches may comprise sampling a received signal with a bootstrapping switch, where the bootstrapping switch comprises a switching metal-oxide semiconductor (mos) transistor having a pull-down path coupled to a gate terminal of the switching mos transistor, wherein: source terminals of both a diode-connected transistor and a second mos transistor are coupled to the gate ...
NEW Active triac triggering circuit
Honeywell International Inc.
February 15, 2018 - N°20180048300

A power supply unit for use with thermostats or other like devices requiring power. A power supply unit may be designed to keep electromagnetic interference emissions at a minimum, particularly at a level that does not violate governmental regulations. A unit may be designed so that there is enough power for a triggering a switch at about a cross over ...
NEW Systems and methods providing an intermodulation distortion sink
Qualcomm Incorporated
February 15, 2018 - N°20180048294

A circuit includes an active balun having an rf signal input and having differential signal outputs, the active balun including a first pair of transistors coupled to the rf signal input, the first pair of transistors including a first transistor of a first type and a second transistor of a second type, wherein the first type and second type are ...
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NEW Wide range power combiner
Argentum Electronics, Inc.
February 15, 2018 - N°20180048148

A wide range power combiner (wrpc) includes an electronics system that combines power from a plurality of input sources, which can differ in level, to at least a single output. In certain embodiments, a circuit can be constructed as shown in the figures (fig. 1); a controller is used to generate a control signal to the switches, and for monitoring the ...
NEW Tungsten gates for non-planar transistors
Intel Corporation
February 15, 2018 - N°20180047825

The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar nmos transistors, wherein an nmos work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a ...
NEW Back-side illuminated pixel
Stmicroelectronics (crolles 2) Sas
February 15, 2018 - N°20180047770

A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a central portion of the pixel by a transfer region of ...
NEW Isolated circuit formed during back end of line process
Renesas Electronics America Inc.
February 15, 2018 - N°20180047756

A semiconductor die is disclosed upon which is formed direct current (dc) isolated first and second circuits. The first circuit is configured for electrical connection to a first ground. The second circuit is configured for electrical connection to a second ground. The first and second grounds can be at different potentials. The first and second circuits were formed using front ...
NEW Goa circuit
Wuhan China Star Optoelectronics Technology Co., Ltd.
February 15, 2018 - N°20180047751

Disclosed is a goa circuit. By locating the thirteenth thin film transistor (t13) coupled with the tenth thin film transistor (t10) in series and controlled by the mth clock signal (ck(m)) in the output module (400) of the nth stage goa unit, as entering signal interrupt and performing touch scan, the output competition of the output ends (g(n)) can ...
NEW Semiconductor memory device
Toshiba Memory Corporation
February 15, 2018 - N°20180047744

A semiconductor memory device includes a semiconductor substrate, transistors formed in an upper surface of the semiconductor substrate, a stacked body provided on the semiconductor substrate, a first contact, and a second contact. The transistors are arranged along a first direction. A minimum period of an arrangement of the transistors is a first period. The stacked body includes electrode films. ...
NEW 3d semiconductor device and structure
Monolithic 3d Inc.
February 15, 2018 - N°20180047707

An integrated circuit device, the device including: a base wafer including a single crystal layer, the base wafer including a plurality of first transistors; at least one metal layer providing interconnection between the plurality of first transistors, where the base wafer includes a memory bit-cell array including the first transistors and control bit-lines and word-lines; and a second layer including ...
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NEW Relay control device
Sumitomo Electric Industries, Ltd.
February 15, 2018 - N°20180047535

A relay control device is provided configured to reduce the amount of power supplied to a coil in an electromagnetic relay. The relay control device includes a control unit for generating and outputting a pfm signal to control the voltage-drop dc/dc converter unit, a filter unit allowing passage of the pfm signal, and a circuit unit controlling the operation ...
NEW Semiconductor memory device
Toshiba Memory Corporation
February 15, 2018 - N°20180047451

A semiconductor memory device includes a memory block, a plurality of bit lines, a plurality of select gate lines, a plurality of word lines, and a controller. The memory block includes a plurality of memory strings, each memory string including a selection transistor and a plurality of memory cells. The plurality of bit lines are arranged in the first direction ...
NEW Nonvolatile memory device and storage device including nonvolatile memory device
February 15, 2018 - N°20180047449

A nonvolatile memory device includes a memory cell array, a row decoder circuit, a page buffer circuit, and a control logic circuit. The control logic circuit controls the row decoder circuit and the page buffer circuit to perform: (1) a pre-program of sequentially selecting a plurality of memory blocks and increasing threshold voltages of string selection transistors or ground selection transistors ...
NEW Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance
Samsung Electronics Co., Ltd.
February 15, 2018 - N°20180047448

A nonvolatile memory device performs a read operation comprising first and second intervals. In the first interval the device applies a turn-on voltage to string selection lines and ground selection lines connected to the string selection transistors and the ground selection transistors, respectively. In the second interval, the device applies a turn-off voltage to unselected string selection lines and unselected ...
NEW Memory with keeper circuit
Taiwan Semiconductor Manufacturing Co., Ltd.
February 15, 2018 - N°20180047442

A memory device with a keeper circuit is disclosed herein. The memory device (i) improves current tracking between the device's memory cells and the keeper circuit, (ii) improves vccmin for memory operations, and (iii) has an efficient circuit layout. The memory device includes a memory array with a plurality of bitlines coupled to the memory cells. The keeper circuit includes ...
NEW Demultiplex type display driving circuit
Wuhan China Star Optoelectronics Technology Co., Ltd.
February 15, 2018 - N°20180047353

Disclosed is a demultiplex type display driving circuit, applied in a rgbw four colors pixel structure display device, comprising a plurality of driving units, and each driving unit comprises eight demultiplex modules, and each demultiplex module comprises three thin film transistors, and gates of the three thin film transistors are electrically coupled to a first branch control signal (demux1), a ...
NEW Gate driver on array circuit and liquid crystal display using the same
Wuhan China Star Optoelectronics Technology Co. Ltd.
February 15, 2018 - N°20180046048

A goa circuit includes goa circuit units. A holding module is substituted for a capacitor in each goa circuit unit. A second transistor in the holding module is turned on when a scanning signal does not produce a pulse so that voltage imposed in a first control node is held by a first transistor and a third transistor. Because the ...
Solid-state imaging device
Sony Corporation
February 08, 2018 - N°20180041725

A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, ...
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