 Patent Application Title |
Patent App Num. |
Date |
| Thin-film transistor array substrate, organic light emitting display device including the same, and method of manufacturing the same | 20130112975 | 20130509 |
 A TFT array substrate including: a thin-film transistor including an active layer, gate, source and drain electrodes, a first insulation layer between the active layer and the gate electrode, and a second insulation layer between the gate and the source and drain electrodes; a pixel electrode on the first and second insulation layers, and connected to one of the source and drain electrodes; a capacitor including a first electrode on the same layer as the gate electrode, a second electrode formed of the same material as the pixel electrode, a first protection layer on the second electrode, and a second protection layer on the first protection layer; a third insulation layer between the second insulation layer and the pixel electrode, and between the first electrode and... |
| Thin film transistor array structure and liquid crystal panel using the same | 20130107153 | 20130502 |
 The present disclosure provides a TFT array substrate. The TFT array substrate includes a plurality of data lines, a plurality of gate lines, a plurality of pixel areas defined by the data lines and the scan lines, a pixel electrode disposed in each pixel area, a storage capacitor disposed on each gate line; and a TFT disposed on the junction of the data line and the gate line. The present disclosure further provides a liquid crystal panel with the TFT array substrate. In the present disclosure, TFTs are respectively disposed on the junctions of the data lines and the gate lines to increase an aperture ratio of a LCD without reducing the number of wirings of the gate lines and data lines. Additionally, the storage capacitor... |
| Hybrid display device | 20130087815 | 20130411 |
 The disclosure provides a hybrid display device, comprising: a substrate, wherein the substrate comprises a first surface and a second surface; a TFT array layer formed on the first surface of the substrate; a first display device formed on the TFT array layer; and a second display device formed on the second surface of the substrate, wherein there exists a corresponding relationship between a dielectric constant (k) of the substrate and a thickness (t) of the substrate to drive at least one of the first display device and the second display device, or to drive both of the first display device and the second display device by the TFT array layer, especially the TFT array layer actively drive the first display device, the second display device... |
| Method of manufacturing tft array substrate and tft array substrate | 20130071962 | 20130321 |
 The invention discloses a method of manufacturing TFT array substrate and a TFT array substrate, wherein the manufacturing method comprises the following steps: sequentially depositing a metal film, a insulating layer, and a semiconductor layer, and manufacturing a gate line and a gate electrode using a composition method; depositing a insulating layer, and manufacturing a channel region protecting layer using the composition method; sequentially depositing a doped semiconductor layer and a metal layer; forming a source electrode, a drain electrode and a data line using the composition method; and cutting the doped semiconductor layer and the metal layer to form an energizing channel; and depositing an ITO layer, and forming a pixel electrode by the ITO layer using the composition method. Because four-composition technologies are used... |
| Tft array substrate and manufacturing method thereof | 20130056739 | 20130307 |
 A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.
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| Thin film transistor array structure and manufacturing method thereof | 20130043472 | 20130221 |
| A thin film transistor (TFT) array structure for a liquid crystal display (LCD) includes a panel, a first conductive layer, a middle layer, a second conductive layer, a passivation layer, and a black electrode layer. The first conductive layer is formed on the panel using filming technologies and a first photo-mask process. The middle layer is deposited and formed on the first conductive layer using a second photo-mask process. The second conductive layer is formed on the middle layer using a third photo-mask process and a first etching operation. The passivation layer is deposited and formed on the middle layer and the second conductive layer using a forth photo-mask process and a second etching operation. The black electrode layer formed on the passivation layer. The TFT... |
| Pva pixel electrode and liquid crystal display apparatus using the same | 20130033668 | 20130207 |
| The present invention provides a patterned vertical alignment (PVA) pixel electrode comprising: a first electrode in the form of a “” or “” shape disposed on a TFT array substrate; and a second electrode in the form of a “” or “” shape corresponding to the first electrode and disposed on a CF substrate, wherein the first electrode and/or the second electrode includes ITO slits with unequal length which are disposed between the fringes of the first electrode and the second electrode for improving a display quality of the pixel. The present invention further provides a liquid crystal display (LCD) apparatus. The PVA pixel electrode and the LCD apparatus using the same can raise a transmittance and a display quality of the pixel.
... |
| Tft array substrate, lcd panel and wiring repairing method | 20130027624 | 20130131 |
| A TFT array substrate includes a pixel region and a wiring region disposed outside the pixel region. The wiring region has a wiring layer including scan or data wirings. A repair wiring layer including repair wiring is disposed insulatedly below or above the wiring layer. A scan or data wiring has a first intersection and a second intersection with a repair wiring section of the repair wiring. When the scan or data wiring is broken, a repair wiring section is cut off the repair wiring by a first cut-off point and a second cut-off point, and the broken scan or data wiring is electrically connected to the repair wiring section through soldering the first intersection and the second intersection. Thus, products that would otherwise be rejected... |
| Methods for manufacturing thin film transistor array substrate and display panel | 20130029441 | 20130131 |
| The present invention provides methods for manufacturing a thin film transistor (TFT) array substrate and a display panel. The method for manufacturing the TFT array substrate comprises the following steps: forming a plurality of gate electrodes, a gate insulating layer, a semiconductor layer, an ohmic contact layer, an electrode layer and a photo-resist layer on a transparent substrate in sequence; using a multi tone mask to pattern the photo-resist layer; forming a plurality of source electrodes and a plurality of drain electrodes at both sides of the channels, respectively; heating the photo-resist layer; etching the semiconductor layer; removing the photo-resist layer; forming a passivation layer on the channels, the source electrodes and the drain electrodes; and forming a pixel electrode layer on the passivation layer. The... |
| Thin film transistor array substrate and method of manufacturing the same | 20130009151 | 20130110 |
| A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
... |
| Thin film transistor array substrate and liquid crystal display panel having the same | 20130009156 | 20130110 |
| A TFT array is disclosed that includes a substrate, a gate line, a data line and a pixel, wherein the pixel comprises a first pixel electrode portion comprising a plurality of spaced apart first electrode lines, the first pixel electrode portion having an associated TFT coupled to the first electrode portion, a second pixel electrode portion comprising a plurality of spaced apart second electrode lines, the second pixel electrode portion capacitively coupled with the first pixel electrode portion, wherein a width of each of the first electrode lines of the first pixel electrode portion is narrower than a width of each of the second electrode lines of the second pixel electrode portion, and an interval between adjacent first electrode lines of the first pixel electrode portion... |
| Liquid crystal display and thin film transistor array panel usable with the liquid crystal display | 20130009159 | 20130110 |
| A liquid crystal display with improved viewing angle and uncompromised transmittance is provided, along with a thin film transistor (TFT) array panel usable for such liquid crystal display. The TFT array panel includes a substrate, a plurality of gate lines formed on the substrate, a plurality of data lines formed on the substrate and intersecting the gate lines, and a plurality of thin film transistors. Each of the thin film transistors includes a gate electrode connected to one of the gate lines, a source electrode connected to one of the data lines, and a drain electrode. The TFT array panel also includes a plurality of pixel electrodes, each of the pixel electrodes connected to one of the drain electrodes and having a pair of oblique edges... |
| Method of manufacturing flexible display | 20130005059 | 20130103 |
| Provided is a method of manufacturing a flexible display, which can simplify manufacturing processes and reduce manufacturing expenses. A method of manufacturing a flexible display according to one exemplary embodiment of the present invention may include: forming a sacrificial layer on a carrier substrate; forming a flexible substrate on the sacrificial layer; forming a TFT array on the flexible substrate; etching the sacrificial layer to separate the flexible substrate from the carrier substrate; attaching the flexible substrate to an adhesive roll; and attaching the flexible substrate, which has been attached to the adhesive roll, to a rear substrate.
... |
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| Thin film transistor array substrate and method for manufacturing the same | 20120313101 | 20121213 |
| The present disclosure discloses a method for manufacturing a TFT array substrate, comprising: depositing a gate metal layer, a gate insulating layer, a semiconductor layer and a source-drain electrode layer in this order on a base substrate, performing a first photolithograph process to form a common electrode line, a gate line, a gate electrode, a source electrode, a drain electrode and a channel defined between the source electrode and the drain electrode; depositing a passivation layer, performing a second photolithograph process to form a first via hole and a second via hole in the passivation layer; and depositing a pixel electrode layer and a data line layer in this order, perform a third photolithograph process to form a data line connected to the source electrode through... |
| Thin-film transistor (tft) array and liquid crystal display (lcd) panel thereof | 20120313915 | 20121213 |
| A thin-film transistor (TFT) array and a liquid crystal display (LCD) panel thereof are described. The TFT array includes a plurality of scan lines, a plurality of data lines, a plurality of pixel units and a plurality of control transistors. When the control transistor turns on and a video signal is transmitted to the pixel unit, the second sub-pixel of another pixel unit is charged. When the gate electrode of the control transistor turns off and the switching transistor of the second sub-pixel of another pixel unit turns on, the second sub-pixel of another pixel unit charges the first sub-pixel of another pixel unit.
... |
| Organic tft array substrate and manufacture method thereof | 20120298972 | 20121129 |
| According to an embodiment of the disclosed technology, a manufacture method of an organic thin film transistor array substrate is provided. The method comprises: forming a first pixel electrode, a source electrode, a drain electrode and a data line in a first patterning process; forming an organic semiconductor island and a gate insulating island in a second patterning process; forming a data pad region in a third patterning process; and forming a second pixel electrode, a gate electrode and a gate line in a fourth patterning process.
... |
| Manufacturing method of low temperature poly-silicon tft array substrate | 20120302016 | 20121129 |
| A manufacturing method of an LTPS-TFT array substrate is provided. The exemplary method comprises a step of sequentially forming a poly-silicon layer and a data-line-metal layer on a base substrate, and performing a patterning process by using a third mask to simultaneously form an active layer and source and drain electrodes, the active layer being provided on the gate insulating layer and corresponding to the gate electrode, and the source and drain electrodes being provided on the active layer.
... |
| Liquid crystal display, tft array substrate and method for manufacturing the same | 20120287364 | 20121115 |
| The embodiments of the disclosed technology provide a liquid crystal display, a thin film transistor array substrate and a method for manufacturing thin film transistor array substrate. The TFT array substrate comprises: a semiconductor layer, a source electrode and a drain electrode formed adjoining the semiconductor layer, a thin film transistor channel region being defined between the source electrode and the drain electrode; and an ohmic contact layer formed between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode, wherein the material of the semiconductor layer is zinc oxide (ZnO) and the material of the ohmic contact layer is GaxZn1−xO, where 0≦x≦1.
... |
| Method of manufacturing poly-silicon tft array substrate | 20120289006 | 20121115 |
| An embodiment of the present disclosure relates to a method of manufacturing a poly-silicon TFT array substrate, which accomplishes a patterning process to form a gate electrode, a poly-silicon semiconductor pattern and a pixel electrode with one process by using an HTM or GTM mask.
... |
| Thin film transistor array substrate and method for fabricating the thin film transistor array substrate | 20120280239 | 20121108 |
| The present disclosed technology is related to a TFT array substrate and a method for fabricating the TFT array substrate. The method may comprise: depositing a transparent conductive film layer and a source-drain metal layer in this order on a base substrate, and forming source electrodes, drain electrodes, data scan lines and transparent pixel electrodes by a first pattering process, with the transparent conductive film layer being left under the source electrodes, the drain electrodes and the data scan lines; on the resultant substrate, depositing a semiconductor layer and forming a patterned semiconductor layer by a second pattering process; and on the resultant substrate, depositing a gate insulator and a gate metal film in this order, and forming gate electrodes and gate scan lines by a... |
| Method of manufacturing in-plane switching mode liquid crystal display | 20120266450 | 20121025 |
| Provided is a method for manufacturing an in-plane switching mode liquid crystal display, which can prevent the problem of bubble generation caused by an Ag dot during the attachment process of a liquid crystal panel and a cover substrate, and improve the yield of an Ag dot process. A method for manufacturing an in-plane switching mode liquid crystal display according to an embodiment of the present invention may comprise: forming a liquid crystal panel by interposing a liquid crystal layer between a color filter substrate and a TFT array substrate; attaching a polarizer, with a protective film attached thereon, on the color filter substrate; forming an Ag dot to be in contact with an edge of the protective film, the color filter substrate, and the TFT... |
| Thin film transistor array panel and method of manufacturing the same | 20120267630 | 20121025 |
| A thin film transistor (“TFT”) array panel is provided. The TFT array panel includes an insulation substrate, a gate line formed on the insulation substrate and including a gate electrode, a data line insulated from and intersecting the gate line, and including a source electrode, a drain electrode opposite to the source electrode on the gate line, and a semiconductor formed in a layer between the data line and the gate line, and having a protruding portion extending below the drain electrode, wherein a portion of the semiconductor extending towards the drain electrode, from an area occupied by the data line, is positioned within an occupying area of the gate line including the gate electrode.
... |
| Tft array substrate and method for manufacturing the same | 20120264260 | 20121018 |
| A TFT array substrate includes a substrate, at least one gate line and gate electrode, a gate insulating layer, and at least one channel component, source electrode, drain electrode and data line. The gate line and gate electrode are disposed on the substrate, wherein both of the gate line and gate electrode have first and second conductive layers, the first conductive layer is formed on the substrate, the first conductive layer contains molybdenum nitride , the second conductive layer is formed on the first conductive layer, and the second conductive layer contains copper. The gate insulating layer is disposed on the gate line, gate electrode and the substrate. The channel component is disposed on the gate insulating layer. The source electrode and drain electrode are disposed... |
| Liquid crystal display panel | 20120257150 | 20121011 |
| A liquid crystal display includes a thin-film transistor (TFT) array substrate, a color filter substrate and a liquid crystal layer disposed between the TFT array substrate and the color filter substrate. The TFT array substrate includes a first substrate, a plurality of scan lines, a plurality of data lines, a plurality of pixel electrodes and a black matrix layer. The black matrix layer is disposed above the scan lines and the data lines of the TFT array substrate and between the data lines and the pixel electrodes.
... |
| Reflective display and tft array substrate thereof | 20120242921 | 20120927 |
| A thin film transistor (TFT) array substrate includes a substrate and a pixel array. The pixel array is disposed on the substrate and includes a plurality of transistors and a plurality of reflective electrodes. Each transistor includes a gate, a drain, a source, and a channel layer. In each transistor, the channel layer is located between the gate and the drain, and between the gate and the source. The channel layer is partially overlapped with the gate, the drain and the source. The reflective electrodes are electrically connected to the drains respectively. Each reflective electrode includes a plurality of dyeing particles and a conductive layer. The dyeing particles are distributed in the conductive layer.
... |
| Liquid crystal display device | 20120200799 | 20120809 |
| A liquid crystal display device has pixel electrodes including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the... |
| Thin-film transistor array substrate and method of fabricating the same | 20120193624 | 20120802 |
| A thin-film transistor (TFT) array substrate comprises: a substrate; an active layer and a capacitor first electrode formed on the substrate; a gate insulating film formed on the substrate, the active layer and the capacitor first electrode; a gate electrode formed on the gate insulating film corresponding to the active layer and a capacitor second electrode formed on the gate insulating film corresponding to the capacitor first electrode; an interlayer insulating film formed on the gate insulating film, the gate electrode, and the capacitor second electrode; and a pixel electrode, a source electrode, and a drain electrode formed on the interlayer insulating film; wherein at least one of the source electrode and the drain electrode is formed on the pixel electrode. A method of fabricating the... |
| Thin film transistor array substrate, manufacturing method thereof, and liquid crystal display device | 20120187405 | 20120726 |
| A TFT array substrate includes a plurality of pixels arranged in a matrix, in which the pixel includes a thin film transistor, a pixel electrode conductively connected to a drain electrode, and a common electrode that is formed opposite the pixel electrode with an insulation film interposed therebetween. In the TFT array substrate, when one of the pixels is focused, the pixel electrode is divided into a plurality of divided pixel electrodes and includes a plurality of branch conductive parts that conductively connect each of the drain electrode and the plurality of divided pixel electrodes, and in plane view, the common electrode is not formed in at least a part of a formation region of the plurality of branch conductive parts.
... |
| Generation of digital electrostatic latent images utilizing wireless communications | 20120183307 | 20120719 |
| An electrostatic latent image is formed when the print controller of a print engine wirelessly transmits digital printing signals. Driving electronics receives the wirelessly transmitted digital printing signals and transmits digital signals to address plurality of thin-film transistors (TFTs) individually in a TFT array. Driving electronics also transmit pixel voltages to bias individual TFTs in the TFT array which in turn drives the hole injecting pixels overcoated with a charge transport layer to generate the electrostatic latent image on the surface of the charge transport layer in response to the received digital printing signals.
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| Dot inversion tft array and lcd panel | 20120176351 | 20120712 |
| A dot inversion TFT array is provided. The dot inversion TFT array includes: a plurality of data lines; a plurality of dot unit pairs, each including a first dot unit and a second dot unit and coupled to one of the data lines; and a plurality of gate line pairs, each including a first gate line and a second gate line. A predetermined dot unit pair of the dot unit pairs is coupled to a predetermined gate line pair of the gate line pairs, and two horizontally neighboring dot unit pairs of the dot unit pairs are mirror-symmetrical.
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