Follow us on Twitter
twitter icon@FreshPatents


Silicon patents

      

This page is updated frequently with new Silicon-related patent applications.




new patent Electric motor
An electric motor includes a permanent magnet rotor unit and a stator unit. The permanent magnet rotor unit includes a spindle, at least one magnet fixedly disposed beside the spindle, at least one magnetic yoke fixedly disposed at an outer end of the magnet.

new patent Germanium-on-silicon laser in cmos technology
A germanium waveguide is formed from a p-type silicon substrate that is coated with a heavily-doped n-type germanium layer and a first n-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip.
Universite Paris Sud


new patent Rechargeable battery with wafer current collector and assembly method
Apparatus and techniques herein related battery plates. For example, a first battery plate can include a conductive silicon wafer.
Gridtential Energy, Inc.


new patent Anode electrode material and lithium ion battery using the same
An anode electrode material and a lithium ion battery are disclosed. The anode electrode material includes an anode binder.
Tsinghua University


new patent Negative electrode active material and producing the same, negative electrode, and battery
A negative electrode contains a negative electrode active material. A negative electrode active material includes: lithium; a first element consisting of silicon or tin; and a second element consisting of oxygen or fluorine, in which the negative electrode active material contains substantially no compound phase of the first element and the lithium, and contains an amorphous phase containing the first element and the second element, and an ionic bond is formed between the lithium and the second element..
Sony Corporation


new patent Separation method, light-emitting device, module, and electronic device
A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming a functional layer over the separation layer; performing heat treatment to promote the release of hydrogen and nitrogen from the layer; and separating the substrate at the separation layer.
Semiconductor Energy Laboratory Co., Ltd.


new patent Process for depositing porous organosilicate glass films for use as resistive random access memory
A process for forming a resistive random-access memory device, the process comprising the steps of: depositing a first electrode on a substrate; forming a porous resistive memory material layer on the first electrode, wherein the porous resistive memory layer is formed by (i) depositing a gaseous composition comprising a silicon precursor and a porogen precursor and, once deposited, (ii) removing the porogen precursor by exposing the composition to uv radiation; and depositing a second electrode on top of the porous resistive memory material layer.. .
Versum Materials Us, Llc


new patent Package structure for ultraviolet light-emitting diode
The present embodiment discloses a package structure for ultraviolet led, which comprises a substrate, an ultraviolet light-emitting diode (led), and an optical device. The wavelength of the light emitted by the ultraviolet led is between 200 and 400 nm.
Institute Of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, R.o.c.


new patent Method of manufacturing a semiconductor device
Provided is a method of manufacturing a semiconductor device having a photodiode that has a shallow p-n junction and thus achieves high sensitivity to an ultraviolet ray, in which an oxide containing impurities at high concentration is deposited on the surface of the silicon substrate, and thereafter a diffusion region is formed to have a shallow junction by performing thermal diffusion of a rapid temperature change, with the use of a high-speed temperature rising and falling apparatus without using ion implantation into the silicon substrate.. .
Sii Semiconductor Corporation


new patent Power semiconductor element and power semiconductor module using same
In a schottky barrier diode comprising silicon carbide: an active region includes a first semiconductor region of a first conductivity type configuring a first schottky junction having a plurality of linear patterns between a first electrode and the first semiconductor region and a second semiconductor region of a second conductivity type adjacent to the first schottky junction and connected to the first electrode; at the border of the active region and a periphery region, a second schottky junction comprising the first electrode and the first semiconductor region and having at least one annular pattern surrounding the linear patterns is provided and the second semiconductor region is adjacent to the second schottky junction and is connected to the first electrode; and the first and second schottky junctions are conductive parts and the second semiconductor region is a nonconductive part in a forward bias state.. .
Hitachi, Ltd.


new patent

Semi-floating gate fet

A semi-floating gate transistor is implemented as a vertical fet built on a silicon substrate, wherein the source, drain, and channel are vertically aligned, on top of one another. Current flow between the source and the drain is influenced by a control gate and a semi-floating gate.
Stmicroelectronics, Inc.

new patent

Tensile strained high percentage silicon germanium alloy finfets

A thermal mixing process is employed to convert a portion of a silicon germanium alloy fin having a first germanium content and an overlying non-doped epitaxial silicon source material into a silicon germanium alloy source structure having a second germanium content that is less than the first germanium content, to convert another portion of the silicon germanium alloy fin and an overlying non-doped epitaxial silicon drain material into a silicon germanium alloy drain structure having the second germanium content, and to provide a tensile strained silicon germanium alloy fin portion having the first germanium content. A dopant is then introduced into the silicon germanium alloy source structure and into the silicon germanium alloy drain structure..
International Business Machines Corporation

new patent

Structure and forming strained finfet by cladding stressors

Various methods and structures for fabricating a strained semiconductor fin of a finfet device. A strained semiconductor fin structure includes a substrate, a semiconductor fin disposed on the substrate, the semiconductor fin having two fin ends, and a stressor material cladding wrapped around a portion of each of the two fin ends forming a strained semiconductor fin that includes at least one strained channel fin having stressor cladding wrapped around at least one end of the strained channel fin thereby straining the at least one strained channel fin.
International Business Machines Corporation

new patent

High voltage mosfet devices and methods of making the devices

A sic mosfet device having low specific on resistance is described. The device has n+, p-well and jfet regions extended in one direction (y-direction) and p+ and source contacts extended in an orthogonal direction (x-direction).
Monolith Semiconductor Inc.

new patent

Techniques for forming non-planar germanium quantum well devices

Techniques are disclosed for forming a non-planar germanium quantum well structure. In particular, the quantum well structure can be implemented with group iv or iii-v semiconductor materials and includes a germanium fin structure.
Intel Corporation

new patent

Low temperature polycrystalline silicon thin film transistor and manufacturing thereof

The disclosure relates to a low temperature polycrystalline silicon thin film transistor including: a substrate; a buffer layer formed on the substrate; a semiconductor layer formed on the buffer layer; a gate insulation layer formed on the buffer layer and the semiconductor layer; gates formed on the gate insulation layer; a dielectric layer formed on the gate insulation layer and the gates; a passivation layer formed on the dielectric layer; a first contact hole and a second contact hole formed respectively inside the passivation layer, the dielectric layer and the gate insulation layer, and sources ad drains formed respectively on the first contact hole and the second contact hole; the semiconductor layer being a low temperature poly silicon layer, and a reflective layer and/or an insulation layer disposed between the buffer layer and the semiconductor layer. The disclosure further relates to a manufacturing method for aforementioned thin film transistor..
Wuhan China Star Optoelectronics Technology Co., Ltd.

new patent

Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts

An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill.
Globalfoundries Inc.

new patent

Semiconductor device including metal-semiconductor junction

A semiconductor device includes a silicon semiconductor layer including at least one region doped with a first conductive type dopant, a metal material layer electrically connected to the doped region, and a self-assembled monolayer (sam) between the doped region and the metal material layer, the sam forming a molecular dipole on an interface of the silicon semiconductor layer in a direction of reducing a schottky barrier height (sbh).. .
Samsung Electronics Co., Ltd.

new patent

Array substrate manufacturing method and array substrate

The present invention provides an array substrate manufacturing method and an array substrate. The array substrate manufacturing method of the present invention uses an organic photoresist material to form a passivation protection layer (90) for substituting the conventional passivation protection layer that is made of a silicon nitride material and applies one mask to subject the passivation protection layer (90) and a planarization layer (70) to exposure and development so as to obtain a third via (91) that is located above the first drain electrode (62) and a fourth via (92) that is located above the second drain electrode (64) and, thus, compared the prior art techniques, saves one mask and reduces one etching process so as to achieve the purposes of simplifying the manufacturing process and saving manufacturing cost.
Wuhan China Star Optoelectronics Technology Co., Ltd.

new patent

Transistor display panel and manufacturing method thereof

A method of manufacturing a transistor display panel and a transistor display panel, the method including forming a polycrystalline silicon layer on a substrate; forming an active layer by patterning the polycrystalline silicon layer; forming a first insulating layer covering the substrate and the active layer; exposing the active layer by polishing the first insulating layer using a polishing apparatus; and forming a second insulating layer that contacts the first insulating layer and the active layer, wherein exposing the active layer by polishing the first insulating layer includes coating a first slurry on a surface of the first insulating layer, the first slurry reducing a polishing rate of the active layer.. .
Samsung Display Co., Ltd.

new patent

Semiconductor device

A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided.
Semiconductor Energy Laboratory Co., Ltd.

new patent

Semiconductor device and manufacturing the same

Deterioration in reliability is prevented regarding a semiconductor device. The deterioration is caused when an insulating film for formation of a sidewall is embedded between gate electrodes at the time of forming sidewalls having two kinds of different widths on a substrate.
Renesas Electronics Corporation

new patent

Semiconductor device and production method thereof

A semiconductor device includes: a memory transistor including a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a first gate electrode that are disposed in sequence on a substrate; and a mos transistor including a third silicon oxide film and a second gate electrode that are disposed in sequence on the substrate. The memory transistor has a side wall including an extending portion of the first silicon oxide film, a second silicon nitride film that is in contact with the first silicon nitride film, and a fourth silicon oxide film that are disposed in sequence on the substrate, and the mos transistor has a side wall including a fifth silicon oxide film that is disposed on the substrate..
Seiko Epson Corporation

new patent

3d ctf integration using hybrid charge trap layer of sin and self aligned sige nanodot

Provided are an improved memory device and a method of manufacturing the same. In one embodiment, the memory device may include a vertical stack of alternating oxide layer and nitride layer, the vertical stack having a channel region formed therethrough, a plurality of nanostructures selectively formed on nitride layer of the vertical stack, and a gate oxide layer disposed on exposed surfaces of the channel region, the gate oxide layer encapsulating the plurality of nanostructures formed on the nitride layer.
Applied Materials, Inc.

new patent

Semiconductor device comprising a floating gate flash memory device

A method of manufacturing a semiconductor device is provided including providing a silicon-on-insulator (soi) substrate comprising a semiconductor bulk substrate, a buried insulation layer formed on the semiconductor bulk substrate and a semiconductor layer formed on the buried insulation layer, forming a first transistor device on and in the soi substrate in a logic area of the soi substrate, removing the semiconductor layer and the buried insulation layer from a memory area of the soi substrate, forming a dielectric layer on the exposed semiconductor bulk substrate, forming a floating gate layer on the first dielectric layer, forming an insulating layer on the floating gate layer and forming a control gate layer on the insulating layer, wherein an upper surface of the floating gate layer is substantially at the same height level as an upper surface of the semiconductor layer remaining in the logic area.. .
Globalfoundries Inc.

new patent

Sige p-channel tri-gate transistor based on bulk silicon and fabrication method thereof

A p-channel tri-gate transistor has a silicon fin that protrudes from a bulk silicon substrate, a thin silicon-germanium active layer is formed on three sidewalls of the silicon fin, and a hole well is formed between the gate insulating film and the silicon fin in the active layer surrounded by the tri-gate by a valence band offset electric potential against the silicon fin for moving holes collected in the hole well along the active layer with a high hole-mobility. Thus, it is possible to have the effects of not only an ultra-high speed, low power operation, but also a body biasing through an integral structure of the silicon fin-body.
Gachon University Of Industry-academic Cooperation Foundation

new patent

Method to form silicide and contact at embedded epitaxial facet

An integrated circuit with an mos transistor abutting field oxide and a gate structure on the field oxide adjacent to the mos transistor and a gap between an epitaxial source/drain and the field oxide is formed with a silicon dioxide-based gap filler in the gap. Metal silicide is formed on the exposed epitaxial source/drain region.
Texas Instruments Incorporated

new patent

Integrated circuit having oxidized gate cut region and method to fabricate same

A method includes epitaxially depositing source/drains on parallel semiconductor fins having parallel polysilicon gate precursor structures disposed thereon orthogonally to the fins, where two adjacent polysilicon gate precursor structures are joined together and connected at ends thereof by a polysilicon loop portion. The method further includes oxidizing the ends of the polysilicon precursor gate structures, the connecting polysilicon loop portion and any semiconductor nodules that formed on the connecting polysilicon loop portion during the step of epitaxially depositing the source/drains.
International Business Machines Corporation

new patent

Method for manufacturing a semiconductor device

The improvement of the reliability of a semiconductor device having a split gate type monos memory is implemented. An ono film and a second polysilicon film are sequentially formed so as to fill between a first polysilicon film and a dummy gate electrode.
Renesas Electronics Corporation

new patent

Bumpless build-up layer package with a pre-stacked microelectronic devices

The present disclosure relates to the field of integrated circuit package design and, more particularly, to packages using a bumpless build-up layer (bbul) designs. Embodiments of the present description relate to the field of fabricating microelectronic packages, wherein a first microelectronic device having through-silicon vias may be stacked with a second microelectronic device and used in a bumpless build-up layer package..
Intel Corporation

new patent

Composite bond structure in stacked semiconductor structure

A semiconductor device includes a substrate, a dielectric structure, a top metal layer and a bonding structure. The dielectric structure is disposed on the substrate.
Taiwan Semiconductor Manufacturing Co., Ltd.

new patent

Standalone interface for stacked silicon interconnect (ssi) technology integration

Methods and apparatus are described for adding one or more features (e.g., high bandwidth memory (hbm)) to an existing qualified stacked silicon interconnect (ssi) technology programmable ic die (e.g., a super logic region (slr)) without changing the programmable ic die (e.g., adding or removing blocks). One example integrated circuit (ic) package generally includes a package substrate; at least one interposer disposed above the package substrate and comprising a plurality of interconnection lines; a programmable ic die disposed above the interposer; a fixed feature die disposed above the interposer; and an interface die disposed above the interposer and configured to couple the programmable ic die to the fixed feature die using a first set of interconnection lines routed through the interposer between the programmable ic die and the interface die and a second set of interconnection lines routed through the interposer between the interface die and the fixed feature die..
Xilinx, Inc.

new patent

Power semiconductor device and manufacturing such a power semiconductor device

A power semiconductor device is provided comprising a wafer, wherein in a termination region of the device a passivation layer structure is formed at least on a portion of a surface of the wafer and the passivation layer structure comprises in an order from the surface of the wafer in a direction away from the wafer a semi insulating layer, a silicon nitride layer, an undoped silicate glass layer and an organic dielectric layer. The silicon nitride layer has a layer thickness of at least 0.5 μm.
Abb Schweiz Ag

new patent

Analysis silanol group of substrate surface

A silanol group on a surface of a substrate having silicon on the surface thereof can be quantitatively analyzed with high accuracy. An analysis method for a silanol group on a substrate surface includes chemically modifying the silanol group by supplying a gas of a metal compound to a substrate having silicon on a surface thereof and allowing the gas of the metal compound to react with the silanol group existing on the surface of the substrate; measuring a concentration of a metal contained in the metal compound which is adsorbed to the surface of the substrate; and calculating a concentration of the silanol group based on the measured concentration of the metal and a ratio in which the metal compound is allowed to be adsorbed to the silanol group on the substrate surface..
Tokyo Electron Limited

new patent

Air gap spacer implant for nzg reliability fix

A method of forming a semiconductor device includes providing a silicon-on-insulator substrate comprising a semiconductor bulk substrate, a buried insulation layer formed on the semiconductor bulk substrate and a semiconductor layer formed on the buried insulation layer, providing at least one n-type metal-oxide semiconductor gate structure being an nzg gate structure having a gate insulation layer over the semiconductor layer and at least one p-type metal-oxide semiconductor gate structure being a pzg gate structure having a gate insulation layer over the semiconductor layer, the nzg and pzg gate structures being electrically separated from each other.. .
Globalfoundries Inc.

new patent

Transistor device structures with retrograde wells in cmos applications

A device includes a substrate having an n-active region and a p-active region, a layer of silicon-carbon positioned on an upper surface of the n-active region, a first layer of a first semiconductor material positioned on the layer of silicon-carbon, a second layer of the first semiconductor material positioned on an upper surface of the p-active region, and a layer of a second semiconductor material positioned on the second layer of the first semiconductor material. An n-type transistor is positioned in and above the n-active region and a p-type transistor is positioned in and above the p-active region..
Globalfoundries Inc.

new patent

Semiconductor device including contact structure

A semiconductor device including a contact structure is provided. The semiconductor device includes an isolation region defining a lower active region.
Samsung Electronics Co., Ltd.

new patent

Thru-silicon-via structures

Stress generation free thru-silicon-via structures with improved performance and reliability and methods of manufacture are provided. The method includes forming a first conductive diffusion barrier liner on an insulator layer within a thru-silicon-via of a wafer material.
Globalfoundries Inc.

new patent

Semiconductor device and manufacturing method thereof

The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed..
Renesas Electronics Corporation

new patent

Engineered substrate structure and manufacture

A substrate includes a polycrystalline ceramic core; a first adhesion layer encapsulating the polycrystalline ceramic core; a conductive layer encapsulating the first adhesion layer; a second adhesion layer encapsulating the conductive layer; a barrier layer encapsulating the second adhesion layer, and a bonding layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the bonding layer.. .
Quora Technology

new patent

Thermally stable charge trapping layer for use in manufacture of semiconductor-on-insulator structures

A single crystal semiconductor handle substrate for use in the manufacture of semiconductor-on-insulator (e.g., silicon-on-insulator (soi)) structure is etched to form a porous layer in the front surface region of the wafer. The etched region is oxidized and then filled with a semiconductor material, which may be polycrystalline or amorphous.
Sunedison Semiconductor Limited

new patent

Method for conditioning silicon part

A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° c.
Lam Research Corporation

new patent

Method of selective epitaxy

Embodiments of the present disclosure generally relate to methods for trench filling of high quality epitaxial silicon-containing material without losing selectivity of growth to dielectrics such as silicon oxides and silicon nitrides. The methods include epitaxially growing a silicon-containing material within a trench formed in a dielectric layer by exposing the trench to a gas mixture comprising a halogenated silicon compound and a halogenated germanium compound.
Applied Materials, Inc.

new patent

Multilayer dielectric structures with graded composition for nano-scale semiconductor devices

Multilayer dielectric structures are provided with graded composition. For example, a multilayer dielectric structure includes a stack of dielectric films, wherein the dielectric films include at least a first sicno (silicon carbon nitride oxide) film and a second sicno film.
International Business Machines Corporation

new patent

Engineered substrate structure for power and rf applications

A substrate includes a support structure comprising: a polycrystalline ceramic core; a first adhesion layer coupled to the polycrystalline ceramic core; a conductive layer coupled to the first adhesion layer; a second adhesion layer coupled to the conductive layer; and a barrier layer coupled to the second adhesion layer. The substrate also includes a silicon oxide layer coupled to the support structure, a substantially single crystalline silicon layer coupled to the silicon oxide layer, and an epitaxial layer coupled to the substantially single crystalline silicon layer..
Quora Technology

new patent

Optical recording medium

An optical recording medium includes a reflective layer, a first dielectric layer, a phase-change recording layer, and a second dielectric layer. The phase-change recording layer has an average composition represented by sbxinymz, in which m is at least one of mo, ge, mn, and al, and x, y, and z are values in the ranges 0.70≦x≦0.92, 0.05≦y≦0.20, and 0.03≦z≦0.10, respectively, provided that x+y+z=1, the first dielectric layer includes a zirconium oxide-containing composite material or tantalum oxide, and the second dielectric layer includes a chromium oxide-containing composite material or silicon nitride..
Sony Corporation

new patent

Fabrication of electrochromic devices

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited.
View, Inc.

new patent

Tsv testing method and apparatus

An integrated circuit die includes a substrate of semiconductor material having a top surface, a bottom surface, and an opening through the substrate between the top surface and the bottom surface. A through silicon via (tsv) has a conductive body in the opening, has a top contact point coupled to the body at the top surface, and has a bottom contact point coupled to the body at the bottom surface.
Texas Instruments Incorporated

new patent

Tri-axial mems accelerometer

A method for fabricating a tri-axial mems accelerometer that has a top cap silicon wafer and a bottom cap silicon wafer coupled with a measurement mass. The measurement mass has a two level structure, each level having an inner frame coupled to an outer frame by a plurality of first elastic beams, a mass coupled to the inner frame by a plurality of second elastic beams, and a comb coupling structure between the mass and the inner frame.
Chinese Academy Of Sciences Institute Of Geology And Geophysics

new patent

Magnetic removal or identification of damaged or compromised cells or cellular structures

A method for magnetic cellular manipulation may include contacting a composition with a biological sample to form a mixture. The composition may include a plurality of particles.
Inguran, Llc

new patent

Raman spectrometer

A raman spectrometer includes a laser, a lens, a dichroscope, a confocal microscope, an optical system, a fabri-perot tunable filter and a silicon detector. The light emitted by the laser impinges on the dichroscope after passing through the lens.
China Jiliang University

new patent

Vitreous silica crucible and evaluation the same

A vitreous silica crucible used to pull up silicon single crystal includes: a cylindrical straight body portion, a corner portion formed at a lower end of the straight body portion, and a bottom portion connected with the straight body portion via the corner portion, wherein the vitreous silica crucible further comprises: an opaque outer layer enclosing bubbles therein; and a transparent inner layer from which bubbles are removed, wherein the residual distortion's distribution obtained by measuring the silica glass's inner surface in a non-destructed state has an optical path difference which is 130 nm or less, which residual distortion's distribution is measured using a distortion-measuring apparatus which converts a linearly polarized light into circularly polarized light and then irradiates the crucible's wall.. .
Sumco Corporation

new patent

Cmos thermal-diffusivity temperature sensor based on polysilicon

The disclosed embodiments relate to the design of a temperature sensor, which is integrated into a semiconductor chip. This temperature sensor comprises an electro-thermal filter (etf) integrated onto the semiconductor chip, wherein the etf comprises: a heater; a thermopile, and a heat-transmission medium that couples the heater to the thermopile, wherein the heat-transmission medium comprises a polysilicon layer sandwiched between silicon dioxide layers.
Oracle International Corporation

new patent

Heterogeneous spectroscopic transceiving photonic integrated circuit sensor

Described herein are optical sensing devices for photonic integrated circuits (pics). A pic may comprise a plurality of waveguides formed in a silicon on insulator (soi) substrate, and a plurality of heterogeneous lasers, each laser formed from a silicon material of the soi substrate and to emit an output wavelength comprising an infrared wavelength.

new patent

Torque transmitting key for electric submersible pumps

A torque transmitting key for electrical submersible pumps (esp). An esp system includes a rotatable shaft and a sleeve coupled to the rotatable shaft by an elongate key, the elongate key made of a carbide composite material, the carbide composite material including a carbide selected from the group consisting of tungsten carbide, titanium carbide and silicon carbide, and a composite material selected from the group consisting of cobalt, nickel and a combination of cobalt and nickel.
Summit Esp, Llc

new patent

Method of growing high quality, thick sic epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition

Methods for forming an epilayer on a surface of a substrate are generally provided. For example, a substrate can be positioned within a hot wall cvd chamber (e.g., onto a susceptor within the cvd chamber).
University Of South Carolina

new patent

Non-metallic coating for steel substrates and forming the same

A non-metallic coating for a steel substrate or for a coated steel substrate includes a first layer fabricated from at least one of a silicon oxide, a silicon nitride, and a silicon oxynitride, as well as a second layer fabricated from chromium nitride. The second layer has a thickness between 3 nm and 30 nm, and the first layer and the second layer together form a stacked-layer structure having a total thickness of not more than 300 nm..
Magna International Inc.

new patent

Minimizing radical recombination using ald silicon oxide surface coating with intermittent restoration plasma

Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces.
Lam Research Corporation

new patent

Steel alloy with tailored hardenability

An alloy with tailored hardenability includes carbon, silicon, manganese, nickel, molybdenum, chromium, vanadium, and cobalt. A time and temperature transformation diagram of the alloy has a bainite nose and a ferrite nose that occur at approximately the same time at approximately 4 seconds at temperatures of about 750 k and 950 k, respectively..
Gm Global Technology Operations Llc

new patent

Forming high-strength, lightweight alloys

In an example of a method for forming a high-strength, lightweight alloy, starting materials are provided. The starting materials include aluminum, iron, and silicon.
Gm Global Technology Operations Llc

new patent

Methods of extracting hydrocarbons from subterranean formations

A method of extracting hydrocarbons from a subterranean formation comprises introducing a solution comprising a silicon-containing compound into the subterranean formation. The silicon-containing compound may comprise a terminal group comprising one of an alkanoate group, a fluoroalkanoate group, and a perfluoroalkanoate group, and one or more of an alkoxy group and a chlorine atom bonded to a silicon atom.
Baker Hughes Incorporated

new patent

Silicone pressure sensitive adhesives

The invention provides a process for the production of a pressure sensitive adhesive, comprising dissolving a particulate solid mq silicone resin having a bulk density in the range 0.4-0.9 g/cm3 in a volatile solvent, and dissolving a polydiorganosiloxane having a viscosity of 0.1 to 40,000 pa·s at 25° c. In the volatile solvent before, simultaneously with or after dissolving the solid mq silicone resin.
Dow Corning Corporation

new patent

Stabilized solutions of alkylalkoxysilane hydrolysates and flexible films formed thereof

A stabilized mixture containing an alkyltrialkoxysilane hydrolysate solution and an amine functional silicone emulsion is provided. The stabilized mixture may be utilized in a masonry treatment product or a cellulosic or wood treatment product, such as to provide waterproofing properties, or in a hair care treatment product for improving hair combability.
Gelest Technologies, Inc.

new patent

Silicone hydrogel lenses with water-rich surfaces

The invention is related to a hydrated silicone hydrogel contact lens having a layered structural configuration: a lower water content silicone hydrogel core (or bulk material) completely covered with a layer of a higher water content hydrogel totally or substantially free of silicone. A hydrated silicone hydrogel contact lens of the invention possesses high oxygen permeability for maintaining the corneal health and a soft, water-rich, lubricious surface for wearing comfort..
Novartis Ag

new patent

Water-resistant products using a wax emulsion

Embodiments of the present disclosure are directed to water-resistant products which contain a wax emulsion, or silicones, or siliconates, or fluorinated compounds, or stearates, or combinations thereof. In some embodiments, the compound can be used to provide enhanced moisture resistance to joints, or holes such as screw holes or nail holes, in a wallboard..
Henry Company Llc

new patent

Non-reactive, hydrophilic polymers having terminal siloxanes and methods for making and using the same

The present invention relates to compositions comprising at least one stable, near-monodisperse, non-reactive hydrophilic polymer comprising in said polymer's backbone, a hydrophilic segment having a degree of polymerization of about 10 to about 1000, and a linear silicone segment at at least one terminal end of said non-reactive hydrophilic polymer, wherein said silicone segment comprises between about 6 and about 200 siloxy units, and said non-reactive hydrophilic polymer is associated, via the linear silicone block with a silicone hydrogel. The non-reactive hydrophilic polymers may be incorporated into the formulation from which the silicone hydrogel is made or may be contacted with the silicone hydrogel post formation..
Johnson & Johnson Vision Care, Inc.

new patent

Silicone rubber composition and vulcanized product

Disclosed is a silicone rubber composition and a vulcanized product thereof, which show high levels of flexibility and electrical conductivity at the same time. The disclosed silicone rubber composition comprises a silicone rubber and fibrous carbon nanostructures including carbon nanotubes, wherein the fibrous carbon nanostructures exhibit a convex upward shape in a t-plot obtained from an adsorption isotherm.
Zeon Corporation

new patent

Refining process for producing solar silicon, silicon carbide, high-purity graphite and hollow silica microspheres

A process for producing solar grade silicon from silica sand employs a plurality of plasma furnaces to perform a sequence of chemical reactions together with other process steps to produce solar grade silicon. The plasma furnace generates a stable dirty air, donut-shaped plasma into which particulate matter can be introduced.
Plassein Technologies Ltd. Llc

new patent

Mems sensor, especially pressure sensor

A mems sensor with improved overload resistance for metrological registering of a measured variable comprises a plurality of layers, especially silicon layers, arranged on one another. The layers include at least one inner layer, which is arranged between a first layer and a second layer, and in the inner layer there is provided extending perpendicularly to the plane of the inner layer through the inner layer at least one cavity, on which borders externally at least sectionally and forming a connecting element, a region of the inner layer, which is connected with the first layer and the second layer.
Endress + Hauser Gmbh + Co. Kg

new patent

Storage container and mounting system

A storage container and mounting system includes a bottom wall and a perimeter wall that is attached to and extends upwardly from the perimeter wall. The perimeter wall has an upper edge defining an access opening extending into the container.

new patent

Lithographic printing original plate, producing lithographic printing plate using same, and producing printed matter

The present invention provides a planographic printing plate original including, in the order mentioned below: a substrate; and at least a heat sensitive layer and a silicone rubber layer provided on the substrate, wherein the heat sensitive layer contains a polyurethane having a carbonate structure. The present invention also provides a method of producing a planographic printing plate using the same, and a method of producing a printed matter.
Toray Industries, Inc.

new patent

Method of initializing multiferroic element

Here, in the above-mentioned general formula (1), m represents an atom of any of germanium, aluminum and silicon, and x represents a numerical value of 0.5 or more and lower than 1.. .

new patent

Metallo-silicate catalyst (msc) compositions, methods of preparation and methods of use in partial upgrading of hydrocarbon feedstocks

The invention relates to the preparation of novel bi- or tri metallic silicate micro-porous and/or meso-porous materials based on cerium, nickel, copper and/or zinc on a porous silicate framework matrix to use its molecular sieve effect to target preferentially the acidic organic molecules present in hydrocarbon feedstocks like crude oil, bitumen, vgo and the like. The chosen metals are selected based on their ability to activate steam and transfer oxygen for completing the oxidation of carboxylic compounds or decarboxylating them.
Cenovus Energy Inc.

new patent

Method for producing pulverulent solids from alkali salts of silanols

Pulverulent alkali metal alkyl siliconates having lesser hydroscopicity and improved hydrophobicity in construction materials are produced by spray drying an aqueous solution of an alkali metal alkylsiliconate having a defined range of alkali metal content, a low alcohol content, and a low chlorine content.. .
Wacker Chemie Ag

new patent

Delivery of oral care substances

Disclosed is a hydrophilic silicone composition comprising an oral care substance. The composition is based on polysiloxanes having a high water-uptake capability.
Koninklijke Philips N.v.

new patent

Vibrating, essential oils, harmony stone system, apparatus and method

A therapeutic system and related method for use in massage, energy or other healing therapy, comprising: a therapeutic stone; a vibrator aperture carved into a top of the stone, passing only partially through the stone; at least one essential oil channel fabricated into a bottom of the vibrator aperture, passing the remainder of the way through from the bottom of the vibrator aperture to a bottom of the stone; a vibrator surrounded on a circumference thereof with silicon or equivalent material, sized to fit snugly but removably into the aperture; the aperture configured deeply enough in relation to a height of the vibrator to leave enough space for the aperture to provide a reservoir for essential oils poured into the aperture; the at least one essential oil channel configured for the essential oils to diffuse therethrough, through the bottom of the stone, and onto a body of a user.. .

new patent

Silicone based membranes for use in implantable glucose sensors

Membrane systems incorporating silicone polymers are described for use in implantable analyte sensors. Some layers of the membrane system may comprise a blend of a silicone polymer with a hydrophilic polymer, for example, a triblock poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) polymer.
Dexcom, Inc.

new patent

Crock pot bag

The present invention is a reusable silicone container or bag in the shape of the most commonly used crock pots (oval or round according to the dimensions of the specific crock pots). It would have a fully sealable zipper that would make it easy to fill, and empty even when frozen.

new patent

Smoking pipe

The present invention is directed to a smoking pipe having an elastic body that defines an air passage. Preferably the elastic body is formed of a heat resistant silicone.

Surface acoustic wave elements with protective films

A protection film for a surface acoustic wave element, the protection film being configured to prevent moisture absorption into a silicon dioxide film to improve the moisture resistance capability and configured to be unsusceptible to oxidation and stable such that the propagation characteristics of the surface acoustic wave are not adversely affected. The surface acoustic wave element includes a piezoelectric substrate having a top surface, an idt electrode formed on the top surface of the piezoelectric substrate and including a plurality of electrode fingers configured to excite a surface acoustic wave, a first silicon dioxide film formed to cover the comb-shaped electrode on the top surface of the piezoelectric substrate, a silicon oxynitride film formed over and in contact with the first silicon dioxide film, and a second silicon dioxide film formed over and in contact with the silicon oxynitride film..
Skyworks Filter Solutions Japan Co., Ltd.

Telecommunications enclosure with cable seal

A telecommunications enclosure is provided with reliable sealing around cables entering therein. The enclosure includes one or more cable ports with cable seals made from a material that includes an oil-bleed silicone rubber.
Commscope Technologies Llc

Negative electrode material for secondary battery with non-aqueous electrolyte, manufacturing negative electrode material for secondary battery with non-aqueous electrolyte, and lithium ion secondary battery

The present invention is a negative electrode material for a secondary battery with a non-aqueous electrolyte comprising at least a silicon-silicon oxide composite and a carbon coating formed on a surface of the silicon-silicon oxide composite, wherein at least the silicon-silicon oxide composite is doped with lithium, and a ratio i(sic)/i(si) of a peak intensity i(sic) attributable to sic of 2θ=35.8±0.2° to a peak intensity i(si) attributable to si of 2θ=28.4±0.2° satisfies a relation of i(sic)/i(si)≦0.03, when x-ray diffraction using cu-kα ray. As a result, there is provided a negative electrode material for a secondary battery with a non-aqueous electrolyte that is superior in first efficiency and cycle durability to a conventional negative electrode material..
Shin-etsu Chemical Co., Ltd.

Composite positive active material, positive electrode including the same, and lithium battery including the positive electrode

Wherein, in formula 1, m is titanium (ti) or zirconium (zr); m′ is manganese (mn), vanadium (v), magnesium (mg), gallium (ga), silicon (si), tungsten (w), molybdenum (mo), iron (fe), chromium (cr), copper (cu), zinc (zn), titanium (ti), aluminum (al), boron (b), or a combination thereof; and 0<δ<0.5; 0≦x<0.3; a+b+c≦1; 0<a<1; 0<b<1; 0<c<1, and 0.95≦d≦1.05.. .

Non-aqueous electrolyte secondary battery

A non-aqueous electrolyte secondary battery in an aspect of the present invention includes an electrode body formed by winding a positive electrode plate and a negative electrode plate with a separator interposed therebetween; a non-aqueous electrolyte; an outer can that houses the electrode body and the non-aqueous electrolyte; and a sealing body that seals an opening of the outer can. The negative electrode plate has a negative electrode mixture layer formed on a negative electrode current collector.
Sanyo Electric Co., Ltd.

Silicon-carbon composite anode for lithium-ion batteries

The present invention describes a silicon-carbon composite anode tor lithium-ion batteries comprising 40-80 weight % of silicon particles, 10-45 weight % of carbon, consisting of carbon black and graphite, and a combination of carboxy-methyl cellulose (cmc) and styrene butadiene rubber (sb.r) as a binder. The invention also comprises a method of manufacturing the anode and a li-ion battery comprising the si—c composite anode according to the present invention..
Elkem As

Composite materials having red emitting phosphors

A lighting apparatus includes an led light source radiationally coupled to a composite material including a phosphor of formula i and a thermally conductive material dispersed in at least a portion of a binder material. The thermally conductive material includes a material selected from the group consisting of indium oxide, tin oxide, indium tin oxide, calcium oxide, barium oxide, strontium oxide, aluminum hydroxide, magnesium hydroxide, calcium hydroxide, barium hydroxide, strontium hydroxide, zinc hydroxide, aluminum phosphate, magnesium phosphate, calcium phosphate, barium phosphate, strontium phosphate, diamond, graphene, polyethylene nanofibers, carbon nanotubes, silver metal nanoparticles, copper metal nanoparticles, gold metal nanoparticles, aluminum metal nanoparticles, boron nitride, silicon nitride, an alkali metal halide, calcium fluoride, magnesium fluoride, a compound of formula ii, and combinations thereof..
General Electric Company

Method for processing silicon material

The present disclosure provides a method for accelerating the formation of defects in doped silicon. A doped silicon area is exposed with high intensity electromagnetic radiation to provide a substantial excess of majority carriers and promote a high rate of defect formation to allow efficient silicon passivation..
Newsouth Innovations Pty Limited

Solar cell and manufacturing solar cell

A solar cell is made which has a first conduction-type crystalline silicon substrate having a texture provided on the surface, and an i-type amorphous silicon layer located on the surface of the crystalline silicon substrate, wherein the texture has a larger radius of curvature r1 of root parts thereof than the radius of curvature r2 of peak parts thereof. The crystalline silicon substrate has a first conduction-type highly-doped region containing a first conduction-type dopant on the surface thereof, and the dopant concentration in the first conduction-type highly-doped region is higher than that in the center in the thickness direction of the crystalline silicon substrate..
Panasonic Intellectual Property Management Co., Ltd.

Germanium lateral bipolar transistor with silicon passivation

Semiconductor structure including germanium-on-insulator lateral bipolar junction transistors and methods of fabricating the same generally include formation of a silicon passivation layer at an interface between the insulator layer and a germanium layer.. .
International Business Machines Corporation

Laser annealing method, laser annealing apparatus, and manufacturing process for thin film transistor

The present invention provides a laser annealing method for irradiating laser light l to an amorphous silicon thin film deposited on a substrate to obtain polysilicon, the method including: multiply irradiating the laser light l while changing an irradiation area of the laser light l on the amorphous silicon thin film to achieve such a grain size distribution that a crystal grain size of the polysilicon decreases from a central portion to a side edge portion at least along a center line c of the irradiation area of the laser light l. The above laser annealing method can reduce a leak current through a simple process..
V Technology Co., Ltd.

Low temperature poly-silicon thin film transistor and manufacturing the same

The present disclosure relates to a low temperature poly-silicon thin film transistor and a method of preparing the same. The low temperature poly-silicon thin film transistor includes a substrate, a metal induction layer formed on the substrate, a barrier layer formed on the metal induction layer, and an amorphous silicon film layer formed on the barrier layer, the amorphous silicon film layer being converted into a poly-silicon film layer under the inducing effect of the metal induction layer, and the poly-silicon film layer being an active layer.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Silicon carbide semiconductor device

A silicon carbide semiconductor device includes a silicon carbide substrate and a gate insulating film. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface.
Sumitomo Electric Industries, Ltd.

Semiconductor device and manufacturing semiconductor device

A semiconductor device includes in an active region in which current flows, an n+-type silicon carbide epitaxial layer of a low concentration and formed on an n+-type silicon carbide substrate; a p-type channel region constituting a channel region; a trench contacting the p-type channel region and having embedded therein an oxide film and a gate electrode; a p+-type base layer arranged beneath the trench; a third n-type csl layer region contacting the p-type channel region; a second n-type csl layer region having a maximum impurity concentration higher than that of the third n-type csl layer region, the maximum impurity concentration being farther on a substrate front side than a top of the p+-type base layer arranged beneath the trench is; and a first n-type csl layer region contacting the second n-type csl layer region and having a maximum impurity concentration lower than that of the second n-type csl layer region.. .
Fuji Electric Co., Ltd.

Fully depleted silicon-on-insulator device formation

A p-type metal-oxide-semiconductor (pmos) planar fully depleted silicon-on-insulator (fdsoi) device and a method of fabricating the pmos fdsoi are described. The method includes processing a silicon germanium (sige) layer disposed on an insulator layer to form gaps on a surface opposite a surface that is disposed on the insulator layer, each of the gaps extending into the sige layer to a depth less than or equal to a thickness of the sige layer, and forming a gate conductor over a region of the sige layer corresponding to a channel region of the pmos.
International Business Machines Corporation

Semiconductor device and manufacturing semiconductor device

An active region through which current flows in a semiconductor device includes an n−-type silicon carbide epitaxial layer formed on a front surface of an n+-type silicon carbide semiconductor substrate; a p-type layer becoming a channel region; a trench formed so as to be in contact with a p-type layer and having an oxide film and a gate electrode embedded therein; a p+-type layer arranged beneath the trench and between trenches; an n−-type layer in contact with the p-type layer, a p+-type layer, and the trench, and arranged in contact with a p+-type layer or on a surface side of the semiconductor substrate; an n-type layer in contact with the n−-type silicon carbide epitaxial layer and the p+-type layer, and having an impurity concentration higher than that of the n−-type layer and that of the n−-type silicon carbide epitaxial layer.. .
Sumitomo Electric Industries, Ltd.

Semiconductor device and manufacturing semiconductor device

A silicon carbide semiconductor device has an n-type drift layer provided on a front surface of an n+-type silicon carbide substrate. In a surface layer of the n-type drift layer, a first p+-type region is provided.
Fuji Electric Co., Ltd.

Array substrate, manufacturing method therefor, display panel, and display apparatus

An array substrate and manufacturing method thereof, a display panel and a display device are provided. The array substrate includes a display area and a peripheral circuit area.
Boe Technology Group Co., Ltd.

Display device and electronic device

A display device including a display portion with an extremely high resolution is provided. The display device includes a pixel circuit and a light-emitting element.
Semiconductor Energy Laboratory Co., Ltd.

Vertical-type memory device

A vertical-type memory device may include a channel layer vertically extending on a substrate, a ground selection transistor at a side of the channel layer on the substrate, the ground selection transistor including a first gate insulation portion and a first replacement gate electrode, an etch control layer on the first replacement gate electrode, and a memory cell on the etch control layer, the memory cell including a second gate insulation portion and a second replacement gate electrode. The etch control layer may include a polysilicon layer doped with carbon, n-type impurities, or p-type impurities, or may include a polysilicon oxide layer comprising carbon, n-type impurities, or p-type impurities.

Packaging optoelectronic components and cmos circuitry using silicon-on-insulator substrates for photonics applications

Package structures and methods are provided to integrate optoelectronic and cmos devices using soi semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (ic) chip, and an optoelectronics device and interposer mounted to the ic chip.
International Business Machines Corporation

Silicon package having electrical functionality by embedded passive components

A packaged electronic system comprises a slab (210) of low-grade silicon (i-g-si) configured as ridges (114) framing a depression of depth (112) including a recessed central area suitable to accommodate semiconductor chips and embedded electrical components, the depth at least equal to the thickness of the chips and the components, the ridge covered by system terminals (209b) connected to attachment pads in the central area; and semiconductor chips (120, 130) having a thickness and terminals on at least one of opposing chip sides, the chips terminals attached to the central area terminals so that the opposite chip side is coplanar with the system terminals on the slab ridge.. .
Texas Instruments Incorporated

Backside contact to a final substrate

A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming an electrically-conducting connection in a trench.
International Business Machines Corporation

Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching etching layers, and an environment sensor

The invention relates to a method for structuring a nitride layer (2), comprising the following steps: a) providing a nitride layer (2) formed with silicon nitride of a first type, b) defining regions (40) of said nitride layer (2) to be transformed, and c) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.. .
Osram Opto Semiconductors Gmbh

Silicon carbide semiconductor substrate and manufacturing silicon carbide semiconductor substrate

A silicon carbide semiconductor substrate includes an epitaxial layer. A difference of a donor concentration and an acceptor concentration of the epitaxial layer is within a range from 1×1014/cm3 to 1×1015/cm3.
Fuji Electric Co., Ltd.

Partial net shape and partial near net shape silicon carbide chemical vapor deposition

A method for fabricating a structure having surfaces exposed to plasma in a substrate processing system includes providing a sacrificial substrate having a first shape, machining the substrate into a second shape, the second shape having dimensions corresponding to a desired final shape of the structure, depositing a layer of material on the substrate, machining first selected portions of the layer of material to expose the substrate within the layer of material, removing remaining portions of the substrate, and machining second selected portions of the layer of material into the structure having the desired final shape without machining the surfaces of the structure that are exposed to plasma during processing.. .
Lam Research Corporation

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber..
Hitachi Kokusai Electric Inc.

Methods for depositing low k and low wet etch rate dielectric thin films

Methods for the formation of sicn, sico and sicon films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure..
Applied Materials, Inc.

Forming integrated inductors and transformers with embedded magnetic cores

In accordance with an embodiment of the application a method of forming an integrated magnetic device is described. A prepreg or core is mounted on a carrier.
Texas Instruments Incorporated

Transformer

A transformer of the invention includes a core which includes a main leg, a side leg, and a yoke, and a winding wire (5) which is wound around the main leg of the core, inside a tank (40) which is filled with an insulating medium, the main leg of the core includes a main wound core (1) having a square cross-section which is formed by winding the amorphous magnetic ribbon and a sub wound core (2) constituted by silicon steel plates which are stacked with curvatures provided at four sides thereof, and a cross-section of a part, where the winding wire (5) is disposed, in the main leg is approximately a circular shape.. .
Hitachi, Ltd.

Display device and electronic device

A display device with high driving performance is provided. The display device includes a base, a display portion, a gate deriver, a level shifter, a source driver ic, and a controller ic.
Semiconductor Energy Laboratory Co., Ltd.

Fingerprint detection liquid

A fingerprint detection liquid that makes it possible to recover clear fingerprints from wet objects and various other objects without adjustment of concentration and composition. The fingerprint detection liquid includes not only pigment particles and a silicone but also a cationic surfactant and an ionizing liquid that ionizes the cationic surfactant.
Kinsei Matec Co., Ltd.

Composition for cleaning blade for electrophotographic apparatus and cleaning blade for electrophotographic apparatus

A urethane composition contains (a) a polyester polyol, (b) a polyisocyanate, and (c) a modified silicone oil, wherein the (c) modified silicone oil contains a polysiloxane block and an alkylene oxide block, the alkylene oxide block having a hydroxyl group protected by a protecting group, and the (c) modified silicone oil has no hydroxyl group. A cleaning blade is made of a molding of the urethane composition and contains a polyurethane elastomer and the (c) modified silicone oil..

Release layer

Herein is disclosed a method of coating a web with a release formulation. The method comprising: providing a coating station comprising a rotatable applicator roller to apply a release formulation coating to a web; applying a release formulation coating to a surface of the applicator roller, the release formulation comprising at least one silicone oil; feeding the web through the coating station such that the web engages with the applicator roller; and applying the release formulation coating to the web under a shearing force by rotating the applicator roller such that, at a location at which the web and the applicator roller engage, the surface of the applicator roller moves in the opposite direction to the direction the web is fed through the coating station..
Hp Indigo B.v.

Panel carrier and attaching a liquid-crystal-on-silicon panel thereto

A panel carrier includes a substrate, a die-attach region, a short sidewall, and a conductor. The die-attach region is on a top substrate surface of the substrate for supporting the lcos panel.
Omnivision Technologies, Inc.

Device and detecting light

A device for detecting light includes a silicon photomultiplier (sipm) comprising a detection area formed from an array of a plurality of single-photon avalanche diodes (spads). An optical system is configured to shape the light such that the detection area is covered as completely as possible with a light beam region of substantially constant intensity..
Leica Microsystems Cms Gmbh

Fiber coupler for silicon photonics

An apparatus for converting fiber mode to waveguide mode. The apparatus includes a silicon substrate member and a dielectric member having an elongated body.
Inphi Corporation

Optical interconnection device and integrated optical device using bulk-silicon substrate

An optical interconnection device including: a first element layer formed on a substrate; a second element layer disposed on the first element layer and receiving an optical signal; and a mode converter interposed between the first element layer and the second element layer, and eliminating a difference between an effective refractive index of the first element layer and an effective refractive index of the second element layer and match a mode profile, wherein the first element layer, the mode converter, and the second element layer are sequentially disposed on respective planes spaced apart from each other on the substrate, and one end of the mode converter overlaps a part of the second element layer, and the other end of the mode converter overlaps a part of the first element layer.. .
Kookmin University Industry-academic Cooperation Foundation

Semiconductor device and manufacturing same

A semiconductor layer that constitutes each of a first optical signal line, a second optical signal line, a grating coupler, an optical modulator, and a p-type layer of a germanium optical receiver is formed by a polycrystalline silicon film. Crystal grains of polycrystalline silicon exposed on an upper surface of the semiconductor layer include crystal grains having flat surfaces parallel to a first main surface of a semiconductor substrate, and crystal grains of polycrystalline silicon exposed on side surfaces (including side surfaces of a protrusion of a protruding portion) of the semiconductor layer include crystal grains having flat surfaces perpendicular to the first main surface of the semiconductor substrate..

Single-mode fiber with ultra low attenuation

A single-mode fiber with ultralow attenuation includes a core layer and cladding layers. The cladding layers includes an inner cladding layer surrounding the core layer, a trench cladding layer surrounding the inner cladding layer, an auxiliary outer cladding layer surrounding the trench cladding layer, and an outer cladding layer surrounding the auxiliary cladding layer.
Yangtze Optical Fibre And Cable Joint Stock Limited Company

Universal readout for silicon photomultiplier based detectors

A sipm readout circuit includes a front-end circuit having amplifiers coupled to sipm analog outputs, pixel readout channels coupled to amplifiers provide a timing signal representing gamma ray photon detection in individual sipm, a block timing channel that creates a summed signal from all sipms, and generates a block timing signal and a validation signal, an energy channel that generates a summed energy signal and a two-dimensional position of the gamma ray photon detection in the block, and a control logic/processing circuit that performs a time stamp estimation method. Methods of determining the radiation event timing and a non-transitory computer-readable medium containing computer-readable instructions to implement the methods are disclosed..
General Electric Company

Optically enabled mems inertial sensors on integrated photonic platforms

A method of forming a photonic inertial sensor includes providing a substrate having an insulation layer and a silicon layer on the insulation layer opposite the substrate; etching the silicon layer to form a silicon proof mass for the photonic inertial sensor; etching at least a portion of the insulation layer underneath the silicon proof mass to suspend the silicon proof mass; and depositing a high-density mass-increasing layer on the silicon proof mass to thereby increase the mass of the silicon proof mass.. .
Khalifa University Of Science And Technology

Method of lipid assay and reagent for use therein

A method of lipid assay characterized by assaying the lipids contained in a blood component in the presence of an organic silicon compound. The method can cause specific conditions for direct methods while satisfying requirements such as no influence on precision of assay, no burden on assay apparatus, and easy availability..
Sekisui Medical Co., Ltd.

Miniature gas sensor and manufacturing the same

The present invention provides a gas sensor structure comprising a gas sensing chip. The back of the sensing material is a hollow structure.
National Applied Research Laboratories

System for determining the adiabatic stress derivative of temperature for rock

A system for determining an adiabatic stress derivative of temperature for rock includes two pressure vessels containing a rock sample unit. The two pressure vessels are both filled with silicon oil.
South China Sea Institute Of Oceanology, Chinese Academy Of Sciences

Metal matrix compositions and methods for manufacturing same

An additive manufacturing method for making a metal matrix composite component includes melting a powdered mixture with an electron beam. The powdered mixture comprises powdered tungsten carbide in an amount of 45 wt % to 72 wt % of the powdered mixture and a powdered binder in an amount of 28 wt % to 55 wt % of the powdered mixture.
Seed Technologies Corp.,ltd.

Window framing system with three main extrusions

A window system for manufacturing fixed windows using only two main extrusions, a main frame, and sash frame; and for manufacturing vertical and horizontal sliding windows using only three main extrusions, a main frame, a sash frame, and an interlock. This overcomes the disadvantages of existing window assemblies that currently need multiple extrusions, and results in reduced retooling costs, permitting manufacture of window systems using newer, more energy efficient materials including silicon-based materials..

Silicon treated polyolefin carbon fibers

A carbonaceous fiber is prepared from a polyolefin fiber. The polyolefin fiber is stabilized and is treated with a silicon source.
Dow Global Technologies Llc

Composite plating film

An object is to provide a composite plating film excellent in the water-repellent property and oil-repellent property using a material that is less likely to accumulate in the environment, as substitute for a fluorine resin. A composite plating film is provided which includes an alloy matrix phase and a silicone dispersed in the alloy matrix phase.
Kabushiki Kaisha Toyota Chuo Kenkyusho

Silicon nitride film forming method and silicon nitride film forming apparatus

A silicon nitride film forming method for forming a silicon nitride film on a substrate to be processed, includes forming a silicon nitride film doped with a predetermined amount of titanium by repeating, a predetermined number of times, forming a silicon nitride film by repeating, a first number of times, a process of causing a silicon source gas to be adsorbed onto the substrate and a process of nitriding the adsorbed silicon source gas with plasma of a nitriding gas, and forming a titanium nitride film by repeating, a second number of times, a process of causing a titanium source gas containing chlorine to be adsorbed onto the substrate and a process of nitriding the adsorbed titanium source gas with the plasma of the nitriding gas.. .
Tokyo Electron Limited

Method for manufacturing light emitting device

A light emitting device is manufactured by bonding an led element on a wiring board using an anisotropic conductive adhesive. In the manufacture, the anisotropic conductive adhesive is disposed on the wiring board, and the led element is disposed thereon.
Dexerials Corporation

Tie layers prepared from particle-containing waterborne suspensions

Waterborne suspensions include surface treated silica particles, a water dispersable binder resin, at least one surfactant, and an aqueous solvent. The surface treated silica particles have a mixture of hydrophobic and hydrophilic silane surface treatment agents, where the ratio of hydrophilic silane surface treatment agent to hydrophobic silane surface treatment agent is greater than 1.
3m Innovative Properties Company

Fire retardant-treated wood products with durable coating protection

A novel method of improving the water and leaching resistances and durability of a fire retardant-treated wood product by using a chemical fire retardant composition in which crosslinking polyvinyl acetate (xpavc or x-pvac) is applied as a protective coating on wood over the fire retardant layer. An additional crosslinking polyvinyl acetate coating layer or one or more layers of acrylic, alkyd, epoxy, lacquer, polyester, polyurethane, silicone coatings, vinyl ester, or the like may further cover the cured crosslinking polyvinyl acetate primer and then dried or cured..

Polyacetal resin composition and sliding member

A polyacetal resin composition which not only is highly inhibited from making creaking sounds but also has satisfactory performances with respect to other properties. The polyacetal resin composition includes 100 parts by weight of a polyacetal resin, 0.01-1 part by weight of a hindered phenolic antioxidant, 0.01-1 part by weight of a nitrogenous compound, 0.1-1 part by weight of a graft copolymer, 0.1-1 part by weight of a fatty acid ester, 0.5-5 parts by weight of a silicone oil, and 0.1-1 part by weight of calcium carbonate.
Polyplastics Co., Ltd.

Ultra highmolecular weight polyethylene compositions

Ultrahigh molecular weight, or high molecular weight silicone is added to ultrahigh molecular weight polyethylene polymer during the compounding process. It creates a material composition that is processable by traditional injection molding and extrusion processes that rely on shear as a primary means of melting and helping to shape end products..

Sponge-formable silicone rubber composition and silicone rubber sponge

A sponge-formable silicone rubber composition comprises: (a) a polyorganosiloxane having at least two silicon-bonded alkenyl groups per molecule, (b) a polyorganosiloxane having at least two silicon-bonded hydrogen atoms per molecule, (c) water, (d) cellulose nanofibers, (e) an emulsifier, and (f) a hydrosilylation reaction catalyst. The sponge-formable silicone rubber composition can form a silicone rubber sponge having uniform and fine bubbles and that does not readily contaminate a mold..
Dow Corning Toray Co., Ltd.

Polyimide precursor resin composition

This resin composition is characterized by comprising (a) 100 parts by mass of a polyimide precursor containing a structural unit represent by general formula (1) (wherein, r1 and r2 are each independently selected from a hydrogen atom, monovalent aliphatic hydrocarbons having 1-20 carbon atoms, and aromatic groups, and x1 is a tetravalent organic group having 4-32 carbon atoms), (b) 0.001-5 parts by mass of a silicone-based surfactant, and (c) an organic solvent.. .
Asahi Kasei Kabushiki Kaisha

Novel bis (alkoxysilyl-vinylene) group-containing silicon compound and production same

The novel silicon-containing compound of the present invention provides a cured product of a room temperature-curable organopolysiloxane composition that is particularly superior in fast curability.. .

Diazadienyl compound, raw material for forming thin film, producing thin film, and diazadiene compound

Wherein r1 and r2 each independently represent a c1-6 linear or branched alkyl group, r3 represents hydrogen, or a c1-6 linear or branched alkyl group, m represents a metal atom or a silicon atom, and n represents a valence of the metal atom or silicon atom represented by m.. .

Seal coats to prevent silicon loss during re-melt infiltration of si contining composites

Provided is a method including obtaining ceramic matrix composite (cmc) with a first matrix portion including a silicon carbide and silicon phase dispersed therewithin, disposing a coating thereupon to form a sealed part, and forming thereupon another segment comprising a cmc, which may be another matrix portion including a silicon carbide and a silicon phase dispersed within therewithin. Also provided is a gas turbine component with a cmc segment including a matrix portion including a silicon carbide and a silicon phase dispersed therewithin, a sealing layer including silicon carbide enclosing the first segment, and a second segment on the sealing layer, wherein the second segment includes a melt-infiltrated cmc having a matrix portion including a silicon carbide and a silicon phase dispersed therewithin..
General Electric Company

Fiber unwinding system and methods of unwinding a fiber from a bobbin

Methods for coating a fiber are provided. The method can include unwinding a silicon carbide-containing fibrous material from a bobbin rotatably mounted around an axle and forming a boron nitride coating onto the silicon carbide-containing fibrous material.
General Electric Company

High strength, density controlled cold fusion concrete cementitious spray applied fireproofing

A density controlled cold fusion concrete cementitious spray applied fireproofing material including a mixture of water, one or more of silicon dioxide, expanded glass, vermiculite, bottom ash, perlite, expanded shale, or other lightweight aggregates of various diameter sizes ranging from about 0.025 mm to about 12.5 mm in diameter; anhydrous or hydrous sodium or potassium metasilicate; waste from steel production consisting of granulated ground blast furnace slag (ggbfs); high calcium or low calcium waste from coal combustion (fly ash or bottom ash); sodium tetraborate, sodium citrate dihydrate, citric acid, or boric acid; and an alkali-resistant micro-.. .
Geopolymer Solutions Llc

Cold fusion concrete

A cold fusion concrete formulation including a mixture of water, silicon based mineral aggregates acting as a filler material; sodium or potassium metasilicate/pentahydrate acting as an activator; waste from steel production including granulated ground blast slag acting as a cementitious ingredient; high calcium or low calcium waste from coal combustion (fly ash or bottom ash) acting as a cementitious ingredient; sodium tetraborate, sodium citrate dihydrate, citric acid, or boric acid acting as set-time retarders; strengthening agents including including calcium, potassium, magnesium, sodium, or aluminium hydroxides; attapulgite, kaolin, red, or other fine grained, high alumino silicate containing clay, for increasing the silicon and alumino-silicate concentration and associated strength; a protein or synthetic protein material to form a weak covalent bond with the hydroxides and silicates, for the purpose of maintaining a consistent volume during the curing process; and a pollinated fern oil to reduce water content of the mixture and decrease viscosity.. .
Geopolymer Solutions Llc

Fire resistant coating

A density controlled cold fusion concrete cementitious spray applied fireproofing material including a mixture of water, one or more of silicon dioxide, expanded glass, vermiculite, bottom ash, perlite, expanded shale, expanded polystyrene, and sulfonated formaldehyde, or other lightweight aggregates of various diameter sizes ranging from about 0.025 mm to about 12.5 mm in diameter; anhydrous or hydrous sodium or potassium metasilicate; waste from steel production consisting of granulated ground blast furnace slag (ggbfs); high calcium or low calcium waste from coal combustion (fly ash or bottom ash); sodium tetraborate, sodium citrate dihydrate, citric acid, or boric acid; and an alkali-resistant micro-fiber.. .
Geopolymer Solutions Llc

A fibre-reinforced transparent composite material and producing same

The present invention relates to a method for producing a fibre-reinforced, transparent composite material (10), comprising the following steps: a) providing a material matrix melt and b) producing reinforcing fibres (14), step b) of the method comprising the steps of b1) providing a mixture having a silicon source and a carbon source, the silicon source and the carbon source being present together in particles of a granulated solid; b2) treating the mixture provided in step a) of the method at a temperature in a range from ≧1400° c. To ≦2000° c., more particularly in a range from ≧1650° c.
Universität Paderborn

Bottle cap opener

There is provided a bottle cap opener comprising: a cylindrical body including an upper cylindrical body and a lower cylindrical body; an elongate screw bar passing through the upper cylindrical body at a center thereof, and passing beyond the upper cylindrical body upwards; a handle coupled to the elongate screw bar at a top end thereof; a screw protrusion coupled to the elongate screw bar at a bottom end thereof; both wings pivotally coupled to the upper cylindrical body at both-side pivotal portions thereof via both-side pivotal shafts respectively; and a silicon-based cap gripper formed on an inner face of the lower cylindrical body so as to grip a bottle cap tightly therein.. .

Curable organopolysiloxane composition, a use thereof, and a laminate prepared from the composition

A curable organopolysiloxane composition comprising: (a) an organopolysiloxane having at least two alkenyl groups in each molecule; (b) an organohydrogenpolysiloxane in an amount sufficient to provide a value of 1.1:1 to 20:1 (sih:alkenyl group) for the molar ratio of silicon-bonded hydrogen atoms in the organohydrogenpolysiloxane to the alkenyl groups in component (a), wherein component (b) consists of the following components (b1) and (b2) at a mass ratio of (b1)/(b2) in the range from 100/0 to 15/85: (b1) an organohydrogenpolysiloxane having at least three silicon-bonded hydrogen atoms in each molecule and a silicon-bonded hydrogen content [si—h] mass % satisfying the following equation: 0<[si—h] mass %<5/(dp)0.5 wherein the dp is in the range from 5 to 1000; (b2) an organohydrogenpolysiloxane having at least one silicon-bonded hydrogen atom in each molecule, which is different from the component (b1); and (c) a hydrosilation reaction catalyst in a catalytic amount.. .
Dow Corning (china) Holding Co., Ltd.

Laminated film

A laminate film which exhibits excellent gas barrier properties and lamination strength even after a severe retort treatment or which is small deterioration of gas barrier properties and hardly cause interlayer peeling can be provided. The laminate film comprises a coating layer, a metal oxide layer and a protective layer, with another intervening layer or without any intervening layer, laminated in this order on at least one surface of a polyester substrate film, wherein the coating layer comprises an oxazoline group-containing resin (a) and a polyurethane resin (b), wherein the metal oxide layer comprises a composite oxide composed of silicon oxide and aluminum oxide, and wherein the protective layer comprises a polyurethane resin (d), the polyurethane resin (d) contains a metaxylylene group in an amount of 20 to 33% by mass and a silanol group in an amount of 700 to 1700 mg per kg of a resin constituting the polyurethane resin (d), as a si element amount contained in the silanol group..
Mitsui Chemicals, Inc.

Heat diffusion sheet

A heat diffusion sheet includes a graphite sheet having a thickness of from 20 μm to 80 μm, an acrylic adhesive layer having a thickness within a range of from 5 μm to 15 μm and not containing a thermally conductive material, a polyester film having a thickness within a range of from 5 μm to 30 μm, and a silicone adhesive layer thinner than the polyester film, having a thickness within a range of from 2 μm to 25 μm, not containing a thermally conductive material and having a peeling strength of from 0.005 n/cm to 1.0 n/cm, sequentially laminated from the graphite sheet. Heat generated by the object to which the silicone adhesive layer is to be adhered is easily transferred to the graphite sheet and the heat diffusion sheet can be peeled off and reused easily..
Dexerials Corporation

Screen protector and manufacture method thereof

The present application relates to the field of screen protective material, it provides a screen protector comprising: a laminate structure (1) made of plastic or glass; an adhesive or a silicon oil coated on one side of the laminate structure (1); a plurality of projections (2) of identical height arranged in a uniform on the same side of the laminate structure (1) as that having the projections (2). The present screen protector can prevent the appearance of newton's ring..
Shenzhen Tec-motion Technologies Co., Ltd.

Release agent for tire bladder, tire bladder, and pneumatic tire

(in the formula, r1 is a substituted or unsubstituted c1-c30 monovalent hydrocarbon group excluding r2, r2 is a carboxy-group-substituted c1-c30 monovalent organic group, r3 is r1 or r2, and n is an integer of 3 to 2000.). This release agent produces a longer service life of a tire bladder and leads to reduced tire production cost because the amount of silicone that migrates to the tire side is low when the tire is released, and repeated mold-release performance is enhanced..

Solid phosphoric acid catalysts

The present disclosure relates to solid phosphoric acid (spa) catalysts useful in the conversion of hydrocarbons, such as the oligomerization of olefins, to methods for making such spa catalysts, and to methods for converting hydrocarbons by contacting hydrocarbons with such catalyst. For example, in certain embodiments, the disclosure provides a calcined solid phosphoric acid catalyst composition that includes phosphoric acid and silicon phosphates, and in which (i) one or more promoters each selected from the group consisting of boron, bismuth, tungsten, silver and lanthanum is present; (ii) the composition is a calcined product of a formable mixture including silica-alumina clay, silica fiber and/or silica alumina fiber; or (iii) the composition is a calcined product of a formable mixture including fumed silica..
Clariant Corporation

Cable and medical hollow tube

A cable includes a silicone rubber coating including microparticles and cavities as an outermost coating. A medial hollow tube includes a silicone rubber coating including microparticles and cavities as an outermost coating or an innermost coating.
Hitachi Metals, Ltd.

Transdermal drug delivery systems for norethindrone acetate

Described are transdermal drug delivery systems for the transdermal administration of norethindrone acetate in the form of a flexible finite system for topical application, comprising a drug-in-adhesive polymer matrix comprising norethindrone acetate (neta) as the only systemically active drug, an adhesive polymer selected from silicone adhesives and polyisobutylene (pib) adhesives, a penetration enhancer, and a crystallization inhibitor. Methods of making and using the systems also are described..
Noven Pharmaceuticals, Inc.

Hydrocortisone acetate suppository formulation for treatment of disease

The present invention relates, in various embodiments, to formulations comprising hydrocortisone and silicon dioxide. In additional embodiments, the invention relates to suppositories comprising hydrocortisone and silicon dioxide.
Criscot Llc

Pulverulent/pasty composition comprising a silicone elastomer gel, solid particles and a hydrocarbon-based oil, and lip treatment process

Optionally at least one wax in a content not exceeding 5% by weight, relative to the weight of the composition.. .

Method of replacing the nucleus pulposus of an intervertebral disc

An implant configured to completely replace degenerated or damaged nucleus pulposus in an intervertebral disc. The implant comprises a silicone elastomer shell that is implanted into a void within the annulus fibrosus created by at least partial removal of the nucleus pulposus therefrom.

Systems and methods for in vivo detection of electrophysiological and electrochemical signals

Systems and methods for measuring electrophysiological and electrochemical signals in a portion of a body of a subject are provided. The structure includes an array of electrochemical sensors made of miniaturized multi-layer graphene, an array of electrophysiological electrodes, an integrated front-end readout circuit, and narrow silicon shafts with metal spines.
New York University

Electronic cigarette

An electronic cigarette, including an atomizer assembly, including: an upper cover; a shell having two through holes; a base having two blind holes; a heating wire having a limit cover and a support base; two silicon plugs; an upper sealing ring; a lower sealing ring; and a sealing plug. The shell is disposed between the upper cover and the base.

Microwaveable container

A microwaveable container comprising a pan and a pan cover, the pan comprising a bottom, a continuous wall, a rim, a first heating layer and a first polymeric layer; the pan cover comprising an upper surface, a lower surface, an outer side edge, a second polymeric layer, and a second heating layer, the first heating layer being attached to the pan bottom, the second heating layer being attached to the pan cover, and wherein the first polymeric layer is attached to the rim, the first heating layer and the pan bottom, the second polymeric layer being attached to the pan cover and the second heating layer; the first and second heating layers independently comprising: a susceptor powder selected from manganese zinc ferrite, nickel zinc ferrite, strontium ferrite or mixtures thereof; and a polymer matrix selected from a silicone rubber, a liquid crystal polymer, a polyphenylene sulfide polymer or mixtures thereof.. .
Dart Industries Inc.

New self-adaptive earcap

A new self-adaptive earcap belonging t the technical field of headsets is provided, including an earcap body, wherein the earcap body is made of soft silicone materials. A small boss is provided on a top surface of the earcap body, and a built-in chamber for receiving an in-ear earphone is provided inside the earcap body.
Fujikon Industrial Co., Ltd

Local buffers in a liquid crystal on silicon chip

An example embodiment includes a liquid crystal on silicon (lcos) system. The lcos system includes multiple pixels, a pixel voltage supply source (voltage source), an external buffer, and a local buffer.
Finisar Corporation

Device programming with system generation

A secure programming system and method for provisioning and programming a target payload into a programmable device mounted in a programmer. The programmable device can be authenticated before programming to verify the device is a valid device produced by a silicon vendor.
Data I/o Corporation

On-chip dc-dc power converters with fully integrated gan power switches, silicon cmos transistors and magnetic inductors

Fully integrated, on-chip dc-dc power converters are provided. In one aspect, a dc-dc power converter includes: a soi wafer having a soi layer separated from a substrate by a buried insulator, wherein the soi layer and the buried insulator are selectively removed from at least one first portion of the soi wafer, and wherein the soi layer and the buried insulator remain present in at least one second portion of the soi wafer; at least one gan transistor formed on the substrate in the first portion of the soi wafer; at least one cmos transistor formed on the soi layer in the second portion of the soi wafer; a dielectric covering the gan and cmos transistors; and at least one magnetic inductor formed on the dielectric.
International Business Machines Corporation

Silicon anode active material and preparation method therefor

The present invention relates to a silicon anode active material capable of high capacity and high output, and a method for fabricating the same. A silicon anode active material according to an embodiment of the present invention includes a silicon core including silicon particles; and a double clamping layer having a silicon carbide layer on the silicon core and a silicon oxide layer between the silicon core and the silicon carbide layer..
Orange Power Ltd.

Conductive polymer and si nanoparticles composite secondary particles and structured current collectors for high loading lithium ion negative electrode application

Embodiments of the present invention disclose a composition of matter comprising a silicon (si) nanoparticle coated with a conductive polymer. Another embodiment discloses a method for preparing a composition of matter comprising a plurality of silicon (si) nanoparticles coated with a conductive polymer comprising providing si nanoparticles, providing a conductive polymer, preparing a si nanoparticle, conductive polymer, and solvent slurry, spraying the slurry into a liquid medium that is a non-solvent of the conductive polymer, and precipitating the silicon (si) nanoparticles coated with the conductive polymer.
The Regents Of The University Of California

Method for manufacturing tft substrate

The present invention provides a method for manufacturing a tft substrate, in which after induced crystallization is conducted by implanting ions into an amorphous silicon layer, there is no need to completely remove the ion induction layer formed on the surface of a poly-silicon layer so obtained and instead, a half-tone mask based operation is applied to remove only a portion of the ion induction layer corresponding to a channel zone and there is no need for re-conducting ion implantation subsequently for source/drain contact zones, thereby saving the mask necessary for re-conducting ion implantation. Further, the source/drain electrodes are also formed with the half-tone mask based operation so as to save the mask necessary for making the source/drain electrodes.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Systems and methods for fabrication of superconducting integrated circuits

Various techniques and apparatus permit fabrication of superconductive circuits. A niobium/aluminum oxide/niobium trilayer may be formed and individual josephson junctions (jjs) formed.
D-wave Systems Inc.

Semiconductor device and semiconductor device manufacturing method

A semiconductor device includes a semiconductor substrate, a polysilicon layer fixed to the semiconductor substrate, and a silicon nitride layer in contact with the polysilicon layer, wherein the polysilicon layer includes a n-type layer and a p-type layer in contact with the n-type layer.. .
Toyota Jidosha Kabushiki Kaisha

Electronic component including a material comprising epoxysilane-modified polyorganosiloxane

The present invention relates to an optoelectronic component comprising a semiconductor (1) and a polyorganosiloxane. The polyorganosiloxane is obtainable by crosslinking a composition comprising a first organosiloxane having at least one terminal vinyl group, a second organosiloxane having at least one silicon-hydrogen bond and an alkoxysilane having at least one epoxy group.
Osram Opto Semiconductors Gmbh

Monolithic integration of iii-v cells for powering memory erasure devices

A method for making a photovoltaic device is provided that includes the steps of providing a silicon substrate having a complementary metal-oxide semiconductor (“cmos”); bonding a first layer of silicon oxide to a second layer of silicon oxide wherein the bonded layers are deposited on the silicon substrate; and forming a iii-v photovoltaic cell on a side of the bonded silicon oxide layers opposite the silicon substrate, wherein when the iii-v photovoltaic cell is exposed to radiation, the iii-v photovoltaic cell generates a current that powers a memory erasure device to cause an alteration of a memory state of a memory cell in an integrated circuit.. .
International Business Machines Corporation

Flexible silicon infrared emitter

An apparatus includes a flexible silicon (si) substrate, such as a crystalline n-type substrate, and a heterostructure structure formed on the silicon substrate. The heterojunction structure includes a first layered structured deposited on a first side of the silicon substrate.
Arizona Board Of Regents On Behalf Of Arizona State University

Metal-foil-assisted fabrication of thin-silicon solar cell

One embodiment relates to a method of fabricating a solar cell. A silicon lamina is cleaved from the silicon substrate.
Sunpower Corporation

Integrated circuits having source/drain structure

The integrated circuit includes a gate structure over a substrate. The integrated circuit further includes a first silicon-containing material structure in a recess adjacent to the gate structure.
Taiwan Semiconductor Manufacturing Company, Ltd.

Silicon carbide semiconductor device and manufacturing silicon carbide semiconductor device

A silicon carbide semiconductor device, including a silicon carbide substrate, multiple trenches provided in the silicon carbide substrate, a first semiconductor region provided between each adjacent two of the trenches, a second semiconductor region selectively provided in the first semiconductor region, multiple third semiconductor regions selectively provided in the silicon carbide substrate to each cover a bottom of one trench, multiple fourth semiconductor regions selectively provided in the silicon carbide substrate, each between adjacent two of the trenches and being in contact with the first semiconductor region, multiple gate electrodes, each provided via a gate insulating film in one of the trenches, a first electrode connected to the first and second semiconductor regions, and a second electrode connected to the rear surface of the silicon carbide substrate. At least two of the trenches are arranged between each adjacent two of the fourth semiconductor regions..
Fuji Electric Co., Ltd.

Silicon germanium p-channel finfet stressor structure and making same

A source/drain (s/d) structure includes a sige structure epitaxially grown and having sloped facets on a recessed fin structure disposed adjacent to a channel portion of a finfet, a first ge structure having a rounded surface epitaxially grown on the sige structure, and a capping layer formed over the rounded surface of the ge structure. The capping layer may be formed of si.
Taiwan Semiconductor Manufacturing Co., Ltd.

3dic device with memory

A semiconductor device, the device including: a first stratum including memory periphery circuits; a second stratum including an array of first memory cells, where the first stratum is overlaid by the second stratum; a third stratum including an array of second memory cells, where the second stratum is overlaid by the third stratum, where the first memory cells include a plurality of first polysilicon structures and the second memory cells include a plurality of second polysilicon structures, and where at least one of the first memory cells is self-aligned to at least one of the second memory cells.. .
Monolithic 3d Inc.

Silicon carbide semiconductor device and manufacturing silicon carbide semiconductor device

A silicon carbide (sic) semiconductor device, including a sic substrate, a first sic layer formed on the substrate, first and second impurity layers selectively formed in the first sic layer, a second sic layer formed on the first sic layer, a third impurity layer selectively formed in the second sic layer and on the second impurity layer, a third sic layer formed on the second sic layer, a fourth impurity layer selectively formed in the third sic layer, a trench that penetrates the fourth impurity layer and the second and third sic layers, a bottom thereof reaching the first impurity layer, and a gate electrode formed in the trench via a gate insulating film. The first sic layer has first and second regions adjacent respectively to the first and second impurity layers on a side facing the substrate, an impurity concentration at the first region being lower than that at the second region..
Fuji Electric Co., Ltd.

Forming a non-planar transistor having a quantum well channel

In one embodiment, the present invention includes an apparatus having a substrate, a buried oxide layer formed on the substrate, a silicon on insulator (soi) core formed on the buried oxide layer, a compressive strained quantum well (qw) layer wrapped around the soi core, and a tensile strained silicon layer wrapped around the qw layer. Other embodiments are described and claimed..
Intel Corporation

Method of fabricating a semiconductor device

A method of fabricating a semiconductor device is disclosed. A substrate is provided.
United Microelectronics Corp.

Method of uniform channel formation

Embodiments described herein generally provide a method and apparatus to form semiconductor devices. Specifically, embodiments describe an apparatus and methods of forming channels in sub-5 nm node finfets.
Applied Materials, Inc.

Finfets with high quality source/drain structures

A semiconductor structure is provided that includes a silicon germanium alloy fin located on a portion of a topmost surface of an insulator layer. A functional gate structure straddles a portion of the silicon germanium alloy fin and is located on other portions of the topmost surface of the insulator layer.
International Business Machines Corporation

Hybrid thin film transistor and organic light emitting display device using the same

Different types of thin film transistors are disposed on the same flexible substrate and an organic light emitting display using the same includes a display area and a non-display area; a first buffer layer over an entire surface of the flexible substrate; a driving transistor on the buffer layer in the display area, the driving transistor including a polycrystalline silicon (lips) layer, a first gate electrode, a first source electrode, and a first drain electrode; a capacitor electrode on the first source electrode of the driving transistor and forming a storage capacitor together with the first source electrode; a switching transistor in the display area to be spaced apart from the driving transistor; and a dummy electrode on the switching transistor, the dummy electrode formed of the same material as the capacitor electrode, and disposed on the same plane as the capacitor.. .
Lg Display Co., Ltd.

Manufacturing ltps tft substrate

The invention provides a manufacturing method for ltps tft substrate. After forming n+ areas on both sides of polysilicon layer, the first gate insulating layer, first gate, second gate insulating layer, and second gate are sequentially formed on polysilicon layer, and the second gate is wider than first gate to produce a low electric field region in the polysilicon layer to reduce leakage current; alternatively, forming first gate and first gate insulating layer, forming polysilicon layer and n+ areas on both sides of polysilicon layer, forming second gate insulating layer and second gate on polysilicon layer, the second gate insulating layer is thicker than first gate insulating layer and the second gate is wider than first gate, so that the second gate insulating layer sandwiched by the second gate beyond first gate and polysilicon layer is thicker and produces a smaller electric field, which simplifies process and reduce cost..
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Displays with silicon and semiconducting oxide thin-film transistors

An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display.
Apple Inc.

Variable holding voltage silicon controlled rectifier using separate and distinct bipolars

A silicon controlled rectifier (scr) using separate bipolar transistors is disclosed. The separate bipolar scr enables access to internal feedback terminals of the scr, which may then may be used to adjust the gain of individual bipolar transistors.
Texas Instruments Incorporated

Packages with die stack including exposed molding underfill

A method includes bonding a first device die onto a top surface of a package substrate, and performing an expose molding on the first device die and the package substrate. At least a lower portion of the first device die is molded in a molding material.
Taiwan Semiconductor Manufacturing Company, Ltd.

Resurfaceable contact pad for silicon or organic redistribution interposer for semiconductor probing

The present invention relates to a method and an apparatus for a resurfaceable contact pad that uses an epoxy to encapsulate contact pads so that the epoxy and encapsulated contact pads are coplanar on a silicon redistribution interposer. These redistribution interposers electrically connect a wafer semi-conductor to a probe card where it is necessary to convert the course pad arrangement of one with a fine pad arrangement of the other through the use of an interposer board.
R&d Circuits, Inc.

Silicon carbide single crystal substrate, silicon carbide semiconductor device, and manufacturing silicon carbide semiconductor device

A silicon carbide single crystal substrate includes a first main surface and a second main surface opposite to the first main surface. The first main surface includes a central square region and an outer square region.
Sumitomo Electric Industries, Ltd.

Bonded semiconductor wafer and manufacturing bonded semiconductor wafer

A bonded semiconductor wafer provided with a single crystal silicon layer on a main surface, wherein the bonded semiconductor wafer has a base wafer composed of a silicon single crystal, and the bonded semiconductor wafer has a first dielectric layer, a polycrystalline silicon layer, a second dielectric layer, and the single crystal silicon layer above the base wafer in this order, with a bonding plane lying between the polycrystalline silicon layer and the second dielectric layer; and wherein a carrier trap layer is formed between the base wafer and the dielectric layer. This provides a bonded semiconductor wafer of a trap-rich type soi substrate wherein the base wafer can be prevented from lowering the specific resistance due to impurities and influence of electric charge in the box oxide film, distortion of radio-frequency fundamental signals and crosstalk signals from one circuit to another circuit are decreased, and the mass-productivity is excellent..
Shin-etsu Handotai Co., Ltd.

Substrate bonding method

A substrate bonding method includes: preparing a first substrate having a first silicon oxide film with a film thickness of 50 nm or more arranged on the first substrate, and a second substrate having a second silicon oxide film arranged on the second substrate; bonding the first substrate and the second substrate together in a state where the first silicon oxide film and the second silicon oxide film face each other; and heating and bonding the first substrate and the second substrate. The preparing of the first substrate and the second substrate includes preparing the second substrate having the second silicon oxide film with a film thickness of 2.5 nm or less.
Denso Corporation

Method for preparing trench isolation structure

A method for preparing a trench isolation structure, which comprises the following steps of: providing a substrate; forming an oxide layer on the substrate; successively generating an oxidation barrier layer and an ethyl orthosilicate layer on the surface of the oxide layer; etching the oxidation barrier layer and the ethyl orthosilicate layer; corroding the substrate to form a trench by using the oxidation barrier layer and the ethyl orthosilicate layer as mask layers; removing the ethyl orthosilicate layer, and oxidizing a side wall of the trench by using the oxidation barrier layer as a barrier layer; filling the trench with a polysilicon and then etching back the polysilicon, and removing the polysilicon on the surface of the oxidation barrier layer; and removing the oxidation barrier layer and the oxide layer on the surface of the substrate.. .
Csmc Technologies Fab2 Co., Ltd.

Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage bcd process

The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage bcd process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the bcd high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the bcd process.
Hangzhou Silan Microelectronics Co., Ltd.

Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and making thereof

Word lines for a three-dimensional memory device can be formed by forming a stack of alternating layers comprising insulating layers and sacrificial material layers and memory stack structures vertically extending therethrough. Backside recesses are formed by removing the sacrificial material layers through a backside via trench.
Sandisk Technologies Llc

Film forming method and manufacturing thin film transistor

Provided is a film forming method to minimize decreases in the electrical resistance of an oxide semiconductor film even when a fluorinated silicon nitride film is formed directly on the oxide semiconductor film. The film forming method includes: a surface treatment process in which a substance including an oxide semiconductor film on a substrate is prepared, plasma is generated using a mixed gas of oxygen and hydrogen which contains hydrogen at a rate of 8% or less (not including 0), and plasma is used to treat surface of oxide semiconductor film; a film formation process in which a fluorinated silicon nitride film (a sin:f film) is subsequently forming on oxide semiconductor film by a plasma cvd method in which plasma is generated using a raw material gas containing silicon tetrafluoride gas and nitrogen gas; and an annealing process in which substrate and film thereon are subsequently heated..
Nissin Electric Co., Ltd.

Uniform back side exposure of through-silicon vias

Systems and methods for uniform back side exposure of through-silicon vias (tsvs) are disclosed. In one embodiment, a semiconductor device comprises a substrate having a front side with circuit elements formed thereon, and a back side opposite the front side.
Micron Technology, Inc.

Methods for fabricating semiconductor devices

Example embodiments relate to a method for fabricating a semiconductor device. The method for fabricating a semiconductor device includes stacking on a substrate an etching target layer, a first mask layer, and a photoresist layer, irradiating extreme ultraviolet (euv) radiation on the photoresist layer to form a photoresist pattern, patterning the first mask layer to form a first mask pattern using the photoresist pattern as an etching mask, and patterning the etching target layer to form a target pattern using the first mask pattern as an etching mask.
Samsung Electronics Co., Ltd.

Method for planarizing material layer

A method for planarizing a silicon layer includes providing a silicon layer having at least one recess therein. Next, a photoresist layer is formed to cover the silicon layer and fill up the recess.
United Microelectronics Corp.

Method of forming structures with v shaped bottom on silicon substrate

The present disclosure generally relate to methods of processing a substrate in an epitaxy chamber. The method includes applying a passivating agent containing antimony to portions of a silicon substrate exposed through trenches formed in a dielectric layer on the silicon substrate, while applying the passivating agent containing antimony, exposing the silicon substrate to a group iv-containing precursor to form an epitaxial layer having a v-shaped structure having an exposed (111) plane at a bottom of the trenches, and forming a semiconductor layer on the epitaxial layer..
Applied Materials, Inc.

Silicon germanium selective oxidation process

Implementations described herein relate to selective oxidation processes for semiconductor device manufacturing. In one implementation, the process includes delivering a substrate having a semiconductor device comprising at least a silicon material and a silicon germanium material formed thereon to a process chamber.
Applied Materials, Inc.

Compositions and methods using same for carbon doped silicon containing films

A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed..
Versum Materials Us, Llc

Mask blank and phase shift mask using same

A mask blank includes: a light transmitting substrate; a first layer disposed on the light transmitting substrate, and including a chromium compound that contains chromium and at least one element selected from oxygen, nitrogen, and carbon; and a second layer disposed on the first layer as an outermost layer from among the first and second layers, and including a silicon compound that contains silicon and at least one element selected from oxygen, nitrogen, and carbon, an alloy of a transition metal and silicon, or a transition metal and silicon compound that contains a transition metal, silicon, and at least one element selected from oxygen, nitrogen, and carbon. The thickness of the first layer is 45 nm or less, and the thickness of the second layer is 5 nm or greater.
Samsung Electronics Co., Ltd.

Cvd silicon monolayer formation method and gate oxide ald formation on semiconductor materials

Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a iii-v surface at a temperature between 300° c. And 500° c.
Applied Materials, Inc.

X-ray systems and methods including x-ray anodes

An anode for an x-ray tube can include a body comprising one or more of a yttrium-oxide derivative, titanium diboride, boron carbide, titanium suboxide, reaction bonded silicon carbide, and reaction boded silicon nitride. Upon collision with an anode, the kinetic energy of an electron beam in an x-ray tube is converted to high frequency electromagnetic waves, i.e., x-rays.

Surface-modified iron-based oxide magnetic particle powder, and producing same

A surface-modified iron-based oxide magnetic particle powder has good solid-liquid separation property in the production process, has good dispersibility in a coating material for forming a coating-type magnetic recording medium, has good orientation property, and has a small elution amount of a water-soluble alkali metal, and to provide a method for producing the surface-modified iron-based oxide magnetic particle powder. The surface-modified iron-based oxide magnetic particle powder can be obtained by neutralizing a solution containing dissolved therein a trivalent iron ion and an ion of the metal, by which the part of fe sites is to be substituted, with an alkali aqueous solution, so as to provide a precursor, coating a silicon oxide on the precursor, heating the precursor to provide e-type iron-based oxide magnetic powder, and adhering a hydroxide or a hydrous oxide of one kind or two kinds of al and y thereto..
Dowa Electronics Materials Co., Ltd.





Follow us on Twitter
twitter icon@FreshPatents

###

This listing is a sample listing of patent applications related to Silicon for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Silicon with additional patents listed. Browse our RSS directory or Search for other possible listings.


1.1894

file did exist - 12571

1 - 1 - 273