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Silicon patents

      

This page is updated frequently with new Silicon-related patent applications.




 Phased-array antenna with in-plane optical feed and  manufacture patent thumbnailPhased-array antenna with in-plane optical feed and manufacture
A phased antenna array comprises a plurality of antennas and photodiodes arranged on a substrate. Each antenna is driven by an electrical signal output by the photodiode.
Phase Sensitive Innovations, Inc.


 Electrolytes with ionic liquid additives for lithium ion batteries patent thumbnailElectrolytes with ionic liquid additives for lithium ion batteries
Electrolytes, anodes, lithium ion cells and methods are provided for preventing lithium metallization in lithium ion batteries to enhance their safety. Electrolytes comprise up to 20% ionic liquid additives which form a mobile solid electrolyte interface during charging of the cell and prevent lithium metallization and electrolyte decomposition on the anode while maintaining the lithium ion mobility at a level which enables fast charging of the batteries.
Storedot Ltd.


 Partly immobilized ionic liquid electrolyte additives for lithium ion batteries patent thumbnailPartly immobilized ionic liquid electrolyte additives for lithium ion batteries
Electrolytes, anodes, lithium ion cells and methods are provided for preventing lithium metallization in lithium ion batteries to enhance their safety. Electrolytes comprise up to 20% ionic liquid additives which form a mobile solid electrolyte interface during charging of the cell and prevent lithium metallization and electrolyte decomposition on the anode while maintaining the lithium ion mobility at a level which enables fast charging of the batteries.
Storedot Ltd.


 Methods for mass-producing silicon nano powder and graphene-doped silicon nano powder patent thumbnailMethods for mass-producing silicon nano powder and graphene-doped silicon nano powder
Disclosed is a facile and cost effective method of producing metal-doped nano silicon powder or graphene-doped metal-doped silicon nano powder having a particle size smaller than 100 nm. The method comprises: (a) preparing a silicon precursor/metal precursor/graphene nano composite; (b) mixing the silicon precursor/metal precursor/graphene nano composite with a desired quantity of magnesium; (c) converting the silicon precursor to form a mixture of graphene-doped silicon and a reaction by-product through a thermal and/or chemical reduction reaction; and (d) removing the reaction by-product from the mixture to obtain graphene-doped metal-doped silicon nano powder..
Nanotek Instruments, Inc.


 Tin silicon anode active material patent thumbnailTin silicon anode active material
Improved anodes and cells are provided, which enable fast charging rates with enhanced safety due to much reduced probability of metallization of lithium on the anode, preventing dendrite growth and related risks of fire or explosion. Anodes and/or electrolytes have buffering zones for partly reducing and gradually introducing lithium ions into the anode for lithiation, to prevent lithium ion accumulation at the anode electrolyte interface and consequent metallization and dendrite growth.
Storedot Ltd.


 A process for preparing passivated emitter rear contact (perc) solar cells patent thumbnailA process for preparing passivated emitter rear contact (perc) solar cells
A process for preparing a passivated emitter rear contact solar cell, which includes the steps as follows: removing the damaged layer on the surface of the silicon wafer and at the same time polishing both surfaces, texturing, forming pn junction, etching, removing the glass impurity, depositing a passivation film on the back surface, depositing a passivating antireflective layer on the front surface, making local openings on the back surface, screen printing of metal paste on both the front surface and the back surface and sintering, in which the texturing step employs a catalytic metal etching approach, and the textured structure is a nanometer-level textured structure. The present invention has combined removing the damaged layer on the surface of the silicon wafer and polishing both the front and back surfaces into one single step, and thus has simplified the production process and reduced the production cost..
Csi Cells Co., Ltd


 Bulk to silicon on insulator device patent thumbnailBulk to silicon on insulator device
A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of the bulk semiconductor substrate adjacent to the fin. The method further includes removing portions of the first insulator layer to reduce a thickness of the first insulator layer and expose a sidewall of the fin.
International Business Machines Corporation


 Bulk to silicon on insulator device patent thumbnailBulk to silicon on insulator device
A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of the bulk semiconductor substrate adjacent to the fin. The method further includes removing portions of the first insulator layer to reduce a thickness of the first insulator layer and expose a sidewall of the fin.
International Business Machines Corporation


 High electron mobility transistors with improved heat dissipation patent thumbnailHigh electron mobility transistors with improved heat dissipation
Iii-nitride based high electron mobility transistors (hemts), such as algan/gan hemts on silicon substrates, with improved heat dissipation are described herein. A semiconductor device having improved heat dissipation may include a substrate having a top surface and a bottom surface, a nucleation layer on the top surface of the substrate, a transition layer on the nucleation layer, a buffer layer on the transition layer, a barrier layer on the buffer layer, and a metal layer filling a via hole that extends from the bottom surface of the substrate to a bottom surface of the transition layer..
University Of Florida Research Foundation, Incorporated


 Semiconductor device and  manufacturing the same patent thumbnailSemiconductor device and manufacturing the same
An insulated gate bipolar transistor (igbt) includes: a p base layer disposed close to a front surface of an n-type silicon substrate; and a deep n+ buffer layer and a shallow n+ buffer layer disposed close to a back surface of the n-type silicon substrate. The p base layer has a higher impurity concentration than the n-type silicon substrate.
Mitsubishi Electric Corporation


Recess liner for silicon germanium fin formation

Semiconductor device fabrication method and structures are provided having a substrate structure which includes a silicon layer at an upper portion. The silicon layer is recessed in a first region of the substrate structure and remains unrecessed in a second region of the substrate structure.
Globalfoundries Inc.

Semiconductor device and manufacturing the same

A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the soi substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed.

Bulk to silicon on insulator device

A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of the bulk semiconductor substrate adjacent to the fin. The method further includes removing portions of the first insulator layer to reduce a thickness of the first insulator layer and expose a sidewall of the fin.
International Business Machines Corporation

Display device

A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor layer; a first top gate electrode disposed above the first semiconductor layer; a first bottom gate electrode disposed under the first semiconductor layer; a first source electrode electrically connected to the first semiconductor layer; and a first drain electrode electrically connected to the first semiconductor layer, wherein the first drain electrode is electrically connected to the light emitting diode.
Innolux Corporation

Display device

A display device includes a substrate; a gate insulating layer disposed on the substrate, a first gate electrode and a second gate electrode; a first active layer disposed on the gate insulating layer and comprising a polysilicon layer; a first insulating layer disposed on the first active layer and the gate insulating layer; a second active layer disposed on the first insulating layer and comprising a metal oxide layer; a first source electrode, a first drain electrode, a second source electrode and a second drain electrode, wherein the first source electrode and the first drain electrode are disposed on the first insulating layer and respectively electrically connect to the first active layer, and the second source electrode and the second drain electrode are disposed on the second active layer and electrically connect to the second active layer; and a display medium layer disposed on the substrate.. .
Innolux Corporation

Display device

A display device includes: a substrate; a first thin film transistor unit disposed on the substrate and comprising a first active layer comprising a silicon layer, wherein the first active layer comprises a channel region, a source region and a drain region; a second thin film transistor unit disposed on the substrate and comprising a second active layer comprising a metal oxide layer; and a display medium disposed on the first thin film transistor unit and the second thin film transistor unit. Herein, a thickness of the silicon layer in the channel region is less than or equal to a thickness of the silicon layer in the source region..
Innolux Corporation

Semiconductor structure having gate replacement and manufacturing the same

A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of first stacked structures and two second stacked structures disposed on the substrate.
Macronix International Co., Ltd.

Semiconductor device and forming the same

A semiconductor device with a ring structure surrounding a through silicon via (tsv) electrode and a method for forming the same are disclosed. The method includes receiving a substrate including a back side and a front side having a conductor thereon, forming a via hole in the substrate and exposing the conductor, forming a groove extending from the back side into the substrate and surrounding the via hole, forming a first material layer in the via hole, and forming a second material layer in the groove.
Nanya Technology Corporation

Method for forming an electrical contact between a semiconductor film and a bulk handle wafer, and resulting structure

A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer.
Stmicroelectronics (crolles 2) Sas

Reliable packaging and interconnect structures

Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the interconnect structure having a top surface and portions of the side walls of the interconnect structure covered in a dissimilar material.
Tessera, Inc.

Co-integration of silicon and silicon-germanium channels for nanosheet devices

Nanosheet semiconductor devices and methods of forming the same include forming a first stack in a first device region, the first stack including layers of a first channel material and layers of a sacrificial material. A second stack is formed in a second device region, the second stack including layers of a second channel material, layers of the sacrificial material, and a liner formed around the layers of the second channel material.
International Business Machines Corporation

Integration of nominal gate width finfets and devices having larger gate width

A starting semiconductor structure includes a layer of filler material (e.g., amorphous silicon), a hard mask layer over the layer of filler material, and filler material lines over the hard mask layer. A protective layer is formed over one or more, but less than all of the filler material lines, at least one protected filler material line and at least one unprotected filler material line have a same width, and, after forming the protective layer, oxidizing unprotected filler material lines, such that the oxidized unprotected line(s) have a larger width than the protected filler material line(s)..
Globalfoundries Inc.

Semiconductor device and manufacturing method thereof

A semiconductor device with a through via penetrating a semiconductor substrate, in which shorting between a wiring and a semiconductor element is prevented to improve the reliability of the semiconductor device. A liner insulating film as a low-k film, which has a function to insulate the semiconductor substrate and a through-silicon via from each other and is thick enough to reduce capacitance between the semiconductor substrate and the through-silicon via, is used as an interlayer insulating film for a first wiring layer over a contact layer.
Renesas Electronics Corporation

Bulk to silicon on insulator device

A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of the bulk semiconductor substrate adjacent to the fin. The method further includes removing portions of the first insulator layer to reduce a thickness of the first insulator layer and expose a sidewall of the fin.
International Business Machines Corporation

Devices and methods for dynamically tunable biasing to backplates and wells

Devices and methods of fabricating integrated circuit devices for dynamically applying bias to back plates and/or p-well regions are provided. One method includes, for instance: obtaining a wafer with a silicon substrate, at least one first oxide layer, at least one silicon layer, and at least one second oxide layer; forming at least one recess in the wafer; depositing at least one third oxide layer over the wafer and filling the at least one recess; depositing a silicon nitride layer over the wafer; and forming at least one opening having sidewalls and a bottom surface within the filled at least one recess.
Globalfoundries Inc.

Carrier-less silicon interposer using photo patterned polymer as substrate

A component, e.g., interposer has first and second opposite sides, conductive elements at the first side and terminals at the second side. The terminals can connect with another component, for example.
Invensas Corporation

Method of growing a high quality iii-v compound layer on a silicon substrate

The present disclosure involves a method of fabricating a semiconductor device. A surface of a silicon wafer is cleaned.
Epistar Corporation

Fusion neutron-source power system

The fusion reactor of the invention comprises a plurality of elongated triangular electrodes aligned in a cylindrical shape to form an axially symmetric containment geometry. The electrodes are separated by means of electrical insulator preferably pure swept quartz (sio2).

Cleaning a silicon photoconductor

In an example implementation, a method of cleaning a silicon photoconductor includes contacting the silicon photoconductor with a base-peroxide solution, rinsing the silicon photoconductor with a liquid, and heating the silicon photoconductor to evaporate the liquid.. .
Hewlett-packard Indigo B.v.

Switch matrix incorporating polarization controller

Optical inputs to photonic switches may incorporate a polarization controller in order to change the polarization of the input signal to a pre-determined polarization for operation with the silicon photonics. A last stage of components of the polarization controller may overlap with a first input switching stage.

Poly(oxazoline-co-ethyleneimine)-epichlorohydrin copolymers and uses thereof

The invention is related to poly(2-oxazoline-co-ethyleneimine)-epichlorohydrin copolymers and chemically-modified derivatives thereof as well as their uses in formation of non-silicone hydrogel coatings on silicone hydrogel contact lenses.. .
Novartis Ag

Destructive inspection method and quality determination vitreous silica crucible

A destructive inspection method of a vitreous silica crucible for pulling a silicon single crystal evaluates a crack state of an inner surface of the vitreous silica crucible supported by a graphite susceptor when a load is instantaneously applied to at least one point on the inner surface via an automatic center punch while pushing the tip portion of the automatic center punch against the inner surface. The destructive inspection method can inspect the vitreous silica crucible under conditions as close to the actual conditions of use as possible..
Sumco Corporation

Internal combustion engine components with anti-fouling properties and methods of making same

A component of an internal combustion engine with anti-fouling (e.g., anti-coking) properties, said component comprising a metal surface; a plasma deposition formed layer comprising silicon, oxygen, and hydrogen on at least a portion of said metal surface; and an anti-fouling coating, of an at least partially fluorinated composition comprising at least one silane group, on at least a portion of a surface of said layer.. .
3m Innovative Properties Company

Manufacturing method and manufacturing system for silicon single crystal

Spatial coordinates of multiple points on an inner surface of a vitreous silica crucible are measured prior to filling raw material in the vitreous silica crucible, and a three-dimensional shape of the inner surface of the vitreous silica crucible using a combination of polygons having vertex coordinates constituted by the respective measured points is specified (s11); a predictive value of an initial liquid surface level of the silicon melt in the vitreous silica crucible is preset (s12); a volume of the silicon melt satisfying the predictive value of the initial liquid surface level is obtained based on the three-dimensional shape of the inner surface of the vitreous silica crucible (s13); a weight of the silicon melt having the volume is obtained (s14); raw material having the weight is filled in the vitreous silica crucible (s15); a dipping control of the seed crystal is performed based on the predictive value of the initial liquid surface level (s17).. .
Sumco Corporation

Aluminum alloys having iron, silicon, vanadium and copper, and with a high volume of ceramic phase therein

New aluminum alloys having iron, vanadium, silicon, and copper, and with a high volume of ceramic phase therein are disclosed. The new products may include from 3 to 12 wt.
Arconic Inc.

Hexene-1 containing amorphous polyalphaolefins for improved hot melt adhesives

Propylene-co-hexene-1-co-butene-1 terpolymers, made either with or without an in-reactor-added organosilicon external donor, are used in the formulation of improved-performance, apao-based, hot melt adhesives. The addition of an external donor during the manufacture of hexene-1 based amorphous polyalpha-olefins (apao's) results in products having enhanced physical and mechanical properties compared to similar adhesive products made without the addition of the external donor..
Rextac Llc

Polishing composition, manufacturing same, and polishing method

There is provided a polishing composition capable of polishing a polishing object including elemental silicon, a silicon compound, metals and the like, especially including tungsten, at a high polishing rate. The polishing composition includes: colloidal silica with organic acid immobilized to a surface thereof; hydrogen peroxide; and salt, the salt being at least one of ammonium nitrate and ammonium sulfate..
Fujimi Incorporated

Polishing composition for silicon oxide film

Provided is a polishing composition for a silicon oxide film that can improve the speed of polishing a silicon oxide film. In one or more embodiments, a polishing composition for a silicon oxide film contains: water; a cerium oxide particle; and a compound having in its molecule an amino group and at least one acid group selected from a sulfonic acid group and a phosphonic acid group.
Kao Corporation

Composition for laminated coating film comprising iron oxide particles coated with silicon oxide

The object of the present invention is to provide a composition for a laminated coating film having designability to a coated body and weather resistance. The present invention provides a composition for a laminated coating film, comprising silicon oxide-coated iron oxide particles, wherein at least a part of the surface of said iron oxide particles is coated with silicon oxide, wherein the diameter of said iron oxide particles is 1 to 50 nm, and wherein the average reflectivity of said silicon oxide-coated iron oxide particles for the light of the wavelengths of 620 to 750 nm is 25% or less.
M. Technique Co., Ltd.

Thermal balancing coating and a manufacturing method thereof

A manufacturing method for a thermal balancing conductive coating includes steps as: a) providing gluey liquid mixed by a first solution and a compound substance with a weight ratio ranging from 1:0.6 to 1:1.4; the compound substance is selected from a group consisting of fluorocarbon resin, fluororesin, acrylic acid resin, polyurethane, polyurea resin, unsaturated polyester, silicon resin, and mixtures thereof; b) providing a filler material mixed by a second solution and a filler substance with a weight ratio ranging from 1:0.1 to 1:0.6 and another weight ratio of the compound substance to the filler substance from 1:0.3 to 1:0.8; the filler substance includes a main ingredient selected from a group consisting of graphite, graphene platelets, graphene, graphite fiber, graphene fiber, bn, mica, and mixtures thereof; c)mixing the gluey liquid and the filler material to produce a thermal balancing conductive material, so as to form a thermal balancing conductive coating.. .
M-victory Specific Material Co., Ltd.

End-modified conjugated diene polymer and preparing the same

Wherein p is a conjugated diene polymer chain; r1 to r7 are each independently c1-c20 saturated or unsaturated hydrocarbon chains; x is carbon (c), silicon (si), or nitrogen (n); a is 1 or 2; and n is an integer of 1 to 200, and a method for preparing the same.. .

Silicone compounds and compositions thereof for the treatment of amino acid based substrates

Organofunctional polyorganosiloxanes, their use in cosmetic compositions, method for treating amino acid based substrates with organofunctional polyorganosiloxanes, compositions comprising the organofunctional polyorganosiloxanes useful for hair straightening and shaping as well as hair coloration and hair color retention.. .
Momentive Performance Materials Gmbh

Ester-modified organosilicon-based surfactants, methods of making same and applications containing the same

There is also provided methods for making the ester-modified organosilicon (i) and agricultural, coating, personal care and home care applications containing the polyalkylene-oxide-free surfactant composition.. .

Halogenide containing glasses in metallization pastes for silicon solar cells

The invention also relates to a solar cell precursor, to a process for the preparation of a solar cell, to a solar cell obtainable by this process, to a module comprising such a solar cell and to the use of a particulate lead-silicate glass as a component in a silver paste that can be used for the formation of an electrode.. .

Method of preparing silicon from sand

Embodiments herein provide a method of preparing silicon (si) from sand (sio2).the method includes preparing sand particles with a size less than 50 microns. Further, the method includes obtaining magnesium (mg) particles with a size in range of 105-150 microns.
Indian Institute Of Technology Bombay

Decorative container sleeves and method

A container for displaying prepared food acquired from a provider in a disposable container is formed by a sleeve of a thermally insulating material such as neoprene or a silicone-based material that has been sized and dimensioned to receive a disposable container from a food provider. The sleeve has indicia thereon to provide an enhanced appearance, or a message such as a slogan or message of support..

Outboard durable transparent conductive coating on aircraft canopy

A coated transparency includes: a transparency; a base layer on the transparency, the base layer comprising at least one selected from an organic compound, an organosilicon compound, and a polysiloxane compound; a metal layer physically contacting the base layer; and a metal oxide layer on the metal layer, the metal oxide layer comprising aluminum doped zinc oxide (azo).. .
Ppg Industries Ohio, Inc.

Elastic roller

An elastic roller includes an inner layer side elastic member around a roller shaft, and a coating layer surrounding around the inner layer side elastic member, the coating layer contacting a belt-shaped member. The coating layer is made of silicone resin having jis-c hardness of 20 degrees or less.
Sato Holdings Kabushiki Kaisha

Thermal conducting sheet and producing same

A thermal conducting sheet having a high adhesion between layers even if the thermal conducting sheet has a multilayer structure is provided. The thermal conducting sheet including a low-hardness layer and a reinforcing layer laminated on one side or both sides of the low-hardness layer.
Kitagawa Industries Co., Ltd.

Silicone-containing roof assemblies and methods for production and use

An underlayment material has a fiber mat partially infused and/or coated with asphalt and coated with silicone coating. A selvedge edge, may be coated or uncoated.
Gardner-gibson, Inc.

Method for producing synthetic leather and synthetic leather produced by the same

The present invention provides a method for producing synthetic leather using a silicone rubber coating liquid; and synthetic leather produced by the method.. .

Diamond composite cmp pad conditioner

A chemical-mechanical polishing/planarization pad conditioner body made from diamond-reinforced reaction bonded silicon carbide, with diamond particles protruding or “standing proud” of the rest of the surface, and uniformly distributed on the cutting surface. In one embodiment, the diamond particles are approximately uniformly distributed throughout the composite, but in other embodiments they are preferentially located at and near the conditioning surface.
M Cubed Technologies, Inc.

Alloy modifying agent for use in preparing metal semisolid slurry

An alloy modifying agent for use in preparing a metal semisolid slurry, where the components and mass ratio thereof is silicon:iron:copper:manganese:magnesium:zinc:titanium:lead:aluminum having a mass ratio of (6.05-6.95):(0.15-0.45):(0.12-0.65):(0.002-0.006):(0.001-0.5):(0.025-0.05):(0.0 02-0.08):(0.002-0.06):(90.5-93.2). Also, a method for preparing the alloy modifying agent and a method for using the alloy modifying agent.
Zhuhai Runxingtai Electrical Co., Ltd

Ultrasonic transducer, making same, ultrasonic transducer array, and ultrasonic test apparatus

A structure that prevents a substrate from being warped is provided on a region or a location other than a membrane that determines the characteristics of a cmut. In a cmut in a structure in which a first conductive layer and a second conductive layer are provided sandwiching a cavity on a substrate, for example, as a warpage prevention structure, a warpage prevention layer that prevents the substrate from being warped is provided between the substrate and the first conductive film.
Hitachi, Ltd.

Sol-gel polymeric stationary phases for high-performance liquid chromatography and solid phase extraction: their making

A sol-gel sorbent or chromatography stationary phase is a particulate metal oxide gel containing polymeric segments uniformly distributed throughout the metal oxide gel. The metal oxide gel is an oxide from silicone or other metal oxide that can have one of the valence bonds attached to an organic group and the remainder occupied by oxygens that can be provided as an oxide or an alkoxide or aryl oxide of the polymeric segments.
The Florida International University Board Of Trustees

Template-induced silicate-doped hydroxyapatite and the preparation method

A silicate-doped hydroxyapatite material has an ordered and directional growth structure. The silicon content in the silicate-doped hydroxyapatite material ranges from 0.1 wt % to 1.6 wt %, and silicon is doped in hydroxyapatite lattices in a form of silicate.
Asia Biomaterials (wuhan) Co. Ltd.

Method and composition for dag mitigation on hair

Technologies are described for a method and constituents for mitigating dag on hair. The method comprises applying a hydrophobic silicon containing constituent and a reactive constituent onto the hair.
Empire Technology Development Llc

Solid lip cosmetics

A solid lip cosmetic provides excellent effects of being prevented from secondary adhesion and also has excellent usability, long-lasting glossiness and stability. A solid lip cosmetic is characterized by comprising (a) 25 to 50% by mass of hydrogenated polyisobutene; (b) 20 to 70% by mass of at least one methylphenylsilicone component that can be separated from the component (a) when the component (b) is mixed with the component (a) at 25° c.; (c) 1 to 20% by mass of neopentyl glycol dicaprate that serves as a compatibility modifier that can adjust the compatibility of the component (a) with the component (b); and (d) 3 to 12% by mass of a wax..
Shiseido Company, Ltd.

Energy device for surgical operations

There is provided an energy device for surgical operation capable of suppressing fixation of body tissue, wherein a coating layer is formed on an outer periphery of a base material constituting an operational area portion transmitting energy in an energy device for surgical operation operating in the operational area portion, and is comprised of a base coating formed on the base material and an outermost coating formed on the base coating. The base coating is made from silicon oxide or a compound containing silicon oxide, and the outermost coating is made from polysiloxane or a compound containing polysiloxane or a compound containing a partly fluorinated polysiloxane, and the coating layer has a good adhesiveness and is applicable to a complicated form..
National University Corporation Shiga University Of Medical Science

Vibrating diaphragm structure and manufacture thereof

A vibrating diaphragm includes a diaphragm body and a suspension edge. The diaphragm body is made by acrylonitrile butadiene styrene materials.
Cheng Uei Precision Industry Co., Ltd.

Vibrating diaphragm structure and manufacture thereof

A vibrating diaphragm includes a diaphragm body and a suspension edge. The diaphragm body is made by acrylonitrile butadiene styrene materials.
Cheng Uei Precision Industry Co., Ltd.

Integrated cosmetic audio driver

An accessory device suitable for use with an electronic device is disclosed. The electronic device may include an audio assembly designed to generate acoustical energy.
Apple Inc.

Robotic camera systems

A direct drive servo motor is provided and may include a quadrature encoder and a silicone rubber sleeve affixed to the encoder's shaft that is attached to the rotor hub and may also include an axle fixed to the rotor hub, inner and outer bearings, front and rear bearing plates, an outer stator, and an inner rotor rare earth magnet ring. A computer-controlled camera system is also provided and includes a direct drive camera gimbal; a pan-bar system; a robotic control system; a master interconnect unit; custom control software; and a track and gantry system.

Time offset validation of components with independent silicon clocks

In accordance with embodiments disclosed herein, there is provided systems and methods for time offset validation of components with independent silicon clocks. A requesting component includes transmission logic to transmit timing protocol requests to a responding component, receiving logic to receive timing protocol responses, replay detection logic to detect a retransmission of a timing protocol message and to set an internal timing state of the requesting component as invalid, and validation logic to detect at least two consecutive timing protocol dialogs and set the internal timing state of the requesting component as valid.
Intel Corporation

Balanced unilateral frequency quadrupler

An integrated frequency quadruplet consists of a pair of balanced frequency doublers that are driven in phase quadrature using a hybrid coupler. This approach results, effectively, in a “unilateral” multiplier that presents a match to the input-driving source, irrespective of the impedance of the doubler stages.
University Of Virginia

Input overvoltage protection circuit

An input overvoltage protection circuit is equipped with a first wiring and a second wiring which are connected to a protected circuit in order to supply a voltage thereto, a fuse inserted in series in the first wiring and which interrupts a current flowing through the first wiring when a current greater than or equal to a predetermined value flows therethrough, a silicon surge absorber, one end of which is connected between the protected circuit and the fuse in the first wiring, and the other end of which is connected to the second wiring, and a bidirectional two-terminal thyristor connected to the first wiring and to the second wiring at a location between the silicon surge absorber and the protected circuit.. .
Fanuc Corporation

Low-profile and high-gain modulated metasurface antennas from gigahertz to terahertz range frequencies

A modulated mts antenna including a metasurface fabricated from metallized cylinders on a ground plane. The antenna structure can be designed to operate in the gigahertz or terahertz frequency band and to have a well defined directivity.
California Institute Of Technology

Method for manufacturing of slurry for negative electrode

The present invention relates to a method of preparing a negative electrode slurry, and, specifically, the present invention provides a method of preparing a negative electrode slurry which includes the steps of preparing a first negative electrode slurry including a silicon-based active material, a carboxymethyl cellulose, and a styrene-butadiene rubber, and a second negative electrode slurry including a graphite-based active material, a conductive agent, a styrene-butadiene rubber, and a carboxymethyl cellulose (step 1), and mixing the first negative electrode slurry and the second negative electrode slurry which are prepared in step 1 (step 2).. .
Lg Chem, Ltd.

Negative electrode active material for non-aqueous electrolyte secondary battery, negative electrode for non-aqueous electrolyte secondary battery, non-aqueous electrolyte secondary battery, and producing negative electrode material for non-aqueous electrolyte secondary battery

A negative electrode active material for a non-aqueous electrolyte secondary battery, including negative electrode active material particles containing a silicon compound (siox where 0.5≦x≦1.6), the negative electrode active material particles being coated with a carbon coating composed of a substance at least partially containing carbon, the carbon coating having a density ranging from 1.2 g/cm3 to 1.9 g/cm3, the negative electrode active material particles having a characteristic of type ii or type iii adsorption-desorption isotherm in the iupac classification, as obtained by adsorption-desorption isotherm measurement with nitrogen gas. This negative electrode active material can increase the battery capacity and improve the cycle performance and battery initial efficiency..
Shin-etsu Chemical Co., Ltd.

Organic el display panel

An organic el display panel including: a substrate; display elements over the substrate; a first sealing layer over the display elements; a buffer layer covering the first sealing layer; and a second sealing layer covering the buffer layer. The first sealing layer, the buffer layer, and the second sealing layer are each made of a silicon nitride film, and a peak amount of ammonia gas desorbing from the silicon nitride film of the buffer layer within a predetermined temperature range is greater than one hundred times and smaller than one thousand times a peak amount of ammonia gas desorbing from each of the silicon nitride film of the first sealing layer and the silicon nitride film of the second sealing layer within the predetermined temperature range..
Joled Inc.

Laminated film and process for manufacturing the same

An object of the present invention is to provide a laminated film which can prevent transmission of the water vapor at the high level, and has good flex resistance, and the present invention provides a laminated film comprising at least a gas barrier layer and an inorganic polymer layer being laminated on a resin substrate, wherein concerning a distance from a surface of the inorganic polymer layer in a film thickness direction of the layer and the ratio of an oxygen atom to a total amount of a silicon atom, an oxygen atom, a carbon atom and a nitrogen atom (oxygen atomic ratio), the ratio of a value of the oxygen atomic ratio o/(total amount of si, o, c and n) in a region from a surface on a side opposite to the gas barrier layer up to 30% of a film thickness of the inorganic polymer in a depth direction to a value of the oxygen atomic ratio o/(total amount of si, o, c and n) in a region from 30% of a film thickness of the inorganic polymer layer in a depth direction up to a surface on a side of the gas barrier layer is 1.05 or more.. .
Sumitomo Chemical Company, Limited

Composition for forming organic semiconductor film, organic semiconductor film, manufacturing method thereof, organic semiconductor element, and manufacturing method thereof

A composition for forming an organic semiconductor film includes an organic semiconductor represented by formula a-1, a polymer, a solvent having a boiling point of 150° c. Or higher and an sp value of 18 to 23, and a silicone compound having a structure represented by formula d-1..
Fujifilm Corporation

Integrated hall effect sensors with voltage controllable sensitivity

An integrated hall effect sensor is disclosed. The integrated hall effect sensor has high tunable sensitivity by varying the thickness of the hall plate.
Globalfoundries Singapore Pte. Ltd.

Silicon-based quantum dot device

A silicon-based quantum dot device (1) is disclosed. The device comprises a substrate (8) and a layer (7) of silicon or silicon-germanium supported on the substrate which is configured to provide at least one quantum dot (51, 52: fig.
Hitachi, Ltd.

Metallization of solar cells with differentiated p-type and n-type region architectures

Methods of fabricating solar cell emitter regions with differentiated p-type and n-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface.

Semiconductor device

A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer.
Semiconductor Energy Laboratory Co., Ltd.

Kite shaped cavity for embedding material

The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a kite-shaped cavity, and the shaped cavity is filled with silicon and germanium material.
Shanghai Huali Microelectronics Corporation

Aluminum nitride based silicon-on-insulator substrate structure

A substrate structure includes a polycrystalline substrate, a plurality of thin film layers disposed on the polycrystalline substrate, a bonding layer coupled to at least a portion of the plurality of thin films, and a single crystal silicon layer joined to the bonding layer.. .
Quora Technology, Inc.

Silicon carbide (sic) device with improved gate dielectric shielding

In one general aspect, an apparatus can include a silicon carbide (sic) device can include a gate dielectric, a first doped region having a first conductivity type, a source, a body region of the first conductivity type, and a second doped region having a second conductivity type. The second doped region can have a first portion and a second portion.
Fairchild Semiconductor Corporation

Vertical power component

A vertical power component includes a doped silicon substrate of a first conductivity type. A local well of a second conductivity type extends from an upper surface of the substrate.
Stmicroelectronics (tours) Sas

Method of forming sige channel formation region

A method comprising: forming an sige layer on sidewalls of one or more fins of a semiconductor device by a non-selective deposition of amorphous sige, the fins being formed of si or sige; depositing a silicon oxide layer over the sige layer; and forming an sige channel formation region within each fin by performing ge enrichment to diffuse ge atoms from the sige layer into the one or more fins.. .
International Business Machines Corporation

Silicon carbide epitaxial substrate and manufacturing silicon carbide semiconductor device

The silicon carbide layer has a second main surface. The second main surface has a peripheral region within 5 mm from an outer edge thereof, and a central region surrounded by the peripheral region.
Sumitomo Electric Industries, Ltd.

Image pickup element, image pickup apparatus, and manufacturing image pickup element

In an image pickup element, an interval between adjacent light receiving elements on a light receiving surface is changed depending on a position on the light receiving surface. Further, the image pickup element is manufactured by a method of manufacturing the image pickup element including layering photodiodes by repeatedly performing a silicon epitaxial process and an ion injection process.

Method for manufacturing semiconductor device, and semiconductor device

Provided is a semiconductor device with improved performance. In a method for manufacturing a semiconductor device, after forming a gate electrode of a transfer transistor over a p-type well, a photodiode is formed in one part of the p-type well positioned on one side with respect to the gate electrode.
Renesas Electronics Corporation

Image sensor contact enhancement

A method of image sensor fabrication includes providing a plurality of photodiodes disposed in a semiconductor material and a floating diffusion disposed in the semiconductor material. The method also includes providing peripheral circuitry disposed in the semiconductor material, including a first electrical contact to the semiconductor material, and forming a transfer gate disposed to transfer image charge from the photodiode to the floating diffusion.
Omnivision Technologies, Inc.

Optoelectronic modules having a silicon substrate, and fabrication methods for such modules

Optoelectronic modules include a silicon substrate in which or on which there is an optoelectronic device. An optics assembly is disposed over the optoelectronic device, and a spacer separates the silicon substrate from the optics assembly.
Heptagon Micro Optics Pte. Ltd.

Variable buried oxide thickness for silicon-on-insulator devices

Variable buried oxide thickness for silicon-on-insulator devices. In some embodiments, a radio-frequency device can include a silicon-on-insulator substrate having an insulator layer and a handle wafer.
Skyworks Solutions, Inc.

Semiconductor device and manufacturing method thereof

An optical waveguide for optical signals is formed in a semiconductor layer of an soi substrate, a heater for heating the optical waveguide is formed on a silicon oxide film which covers the optical waveguide, and wirings for supplying power to the heater are connected to both ends of the heater. Each of the wirings is constituted of a laminated film of a bottom barrier metal film, an aluminum-copper alloy film serving as a main conductive film and a top barrier metal film, and the heater is constituted integrally with the bottom barrier metal film constituting a part of each of the wirings..
Renesas Electronics Corporation

Method and forming boron-doped silicon germanium film, and storage medium

A method for forming a boron-doped silicon germanium film on a base film in a surface of an object to be processed includes: forming a seed layer by adsorbing a chlorine-free boron-containing gas to a surface of the base film; and forming a boron-doped silicon germanium film on the surface of the base film to which the seed layer is adsorbed by using a silicon raw material gas, a germanium raw material gas, and a boron doping gas through a chemical vapor deposition method.. .
Tokyo Electron Limited

Devices with an embedded zener diode

In one aspect, a silicon-controlled rectifier (scr) includes a zener diode embedded in the scr. In another aspect, a laterally diffused metal oxide semiconductor (ldmos) includes a zener diode embedded in the ldmos.
Allegro Microsystems, Llc

Power component protected against overheating

A triac has a vertical structure formed from a silicon substrate having an upper surface side. A main metallization on the upper surface side has a first portion resting on a first region of a first conductivity type formed in a layer of a second conductivity type.
Stmicroelectronics (tours) Sas

Wafer level proximity sensor

Wafer level proximity sensors are formed by processing a silicon substrate wafer and a silicon cap wafer separately, bonding the cap wafer to the substrate wafer, forming an interconnect structure of through-silicon vias within the substrate, and singulating the bonded wafers to yield individually packaged sensors. The wafer level proximity sensor is smaller than a conventional proximity sensor and can be manufactured using a shorter fabrication process at a lower cost.
Stmicroelectronics Pte Ltd

Bond pad with micro-protrusions for direct metallic bonding

A bond pad with micro-protrusions for direct metallic bonding. In one embodiment, a semiconductor device comprises a semiconductor substrate, a through-silicon via (tsv) extending through the semiconductor substrate, and a copper pad electrically connected to the tsv and having a coupling side.
Micron Technology, Inc.

Cu column, cu core column, solder joint, and through-silicon via

Provided are a cu column, a cu core column, a solder joint, and a through-silicon via, which have the low vickers hardness and the small arithmetic mean roughness. For the cu column 1 according to the present invention, its purity is equal to or higher than 99.9% and equal to or lower than 99.995%, its arithmetic mean roughness is equal to or less than 0.3 μm, and its vickers hardness is equal to or higher than 20 hv and equal to or less than 60 hv.
Senju Metal Industry Co., Ltd.

Variable handle wafer resistivity for silicon-on-insulator devices

Variable handle wafer resistivity for silicon-on-insulator devices. In some embodiments, a radio-frequency device can include a silicon-on-insulator substrate having an insulator layer and a handle wafer.
Skyworks Solutions, Inc.

Tunable active silicon for coupler linearity improvement and reconfiguration

An electromagnetic coupler assembly includes a handle wafer having an oxide layer disposed on a first surface thereof. A layer of active semiconductor is disposed on the oxide layer and includes a voltage terminal to receive a supply voltage.
Skyworks Solutions, Inc.

Dual metal-insulator-semiconductor contact structure and formulation method

A method of making a semiconductor device includes forming a first source/drain trench and a second source/drain trench over a first and second source/drain region, respectively; forming a first silicon dioxide layer in the first source/drain trench and a second silicon dioxide layer in the second source/drain trench; forming a first source/drain contact over the first source/drain region, the first source/drain contact including a first tri-layer contact disposed between the first silicon dioxide layer and a first conductive material; and forming a second source/drain contact over the second source/drain region, the second source/drain contact including a second tri-layer contact disposed between the second silicon dioxide layer and a second conductive material; wherein the first tri-layer contact includes a first metal oxide layer in contact with the first silicon dioxide layer, and the second tri-layer contact includes a second metal oxide layer in contact with the second silicon dioxide layer.. .
Globalfoundries, Inc.

Contact expose etch stop

The present disclosure relates to semiconductor devices and the teachings thereof may be embodied in metal oxide semiconductor field effect transistors (mosfet). Some embodiments may include a power mosfet with transistor cells, each cell comprising a source and a drain region; a first dielectric layer disposed atop the transistor cells; a silicon rich oxide layer on the first dielectric layer; grooves through the multi-layered dielectric, each groove above a respective source or drain region and filled with a conductive material; a second dielectric layer atop the multi-layered dielectric; openings in the second dielectric layer, each opening exposing a contact area of one of the plurality of grooves; and a metal layer disposed atop the second dielectric layer and filling the openings.
Microchip Technology Incorporated

Ir assisted fan-out wafer level packaging using silicon handler

A support structure for use in fan-out wafer level packaging is provided that includes, a silicon handler wafer having a first surface and a second surface opposite the first surface, a release layer is located above the first surface of the silicon handler wafer, and a layer selected from the group consisting of an adhesive layer and a redistribution layer is located on a surface of the release layer. After building-up a fan-out wafer level package on the support structure, infrared radiation is employed to remove (via laser ablation) the release layer, and thus remove the silicon handler wafer from the fan-out wafer level package..
International Business Machines Corporation

Method and forming silicon film and storage medium

A silicon film forming method of forming a silicon film in a recess with respect to a target substrate having on its surface an insulating film in which the recess is formed. The method includes (a) forming a first silicon film filling the recess by supplying a silicon raw material gas onto the target substrate, (b) subsequently, etching the first silicon film by supplying a halogen-containing etching gas onto the target substrate such that surfaces of the insulating film on the target substrate and on an upper portion of an inner wall of the recess are exposed and such that the first silicon film remains in a bottom portion of the recess, and (c) subsequently, growing a second silicon film in a bottom-up growth manner on the first silicon film that remains in the recess by supplying a silicon raw material gas onto the target substrate after the etching..
Tokyo Electron Limited

Semiconductor device and manufacturing the same

A first silicon oxide film is formed on the inner wall of a deep trench by oxidizing the inner wall of the deep trench while heating the inner wall. Then, a second silicon oxide film is formed using at least one of atmospheric pressure cvd and plasma cvd so that the second silicon oxide film covers the first silicon oxide film in the deep trench..
Renesas Electronics Corporation

Silicon on nothing devices and methods of formation thereof

In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate.
Infineon Technologies Dresden Gmbh

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes: (a) loading into a process chamber a substrate including: a wiring layer including a first interlayer insulating film, a plurality of copper-containing films formed on the first interlayer insulating film and used as a wiring, an inter-wire insulating film electrically insulating the plurality of copper containing film and a recess formed between the plurality of copper-containing film; and a first diffusion barrier film formed on a first portion of a surface of the plurality of copper-containing films to suppress a diffusion of a component of the plurality of copper-containing film; and (b) supplying a silicon-containing gas into the process chamber to form a silicon-containing film on: a surface of the recess; and a second portion of the surface of the plurality of copper-containing films other than the first portion where the first diffusion barrier film is formed.. .
Hitachi Kokusai Electric Inc.

Process and processing a nitride structure without silica deposition

Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica.
Tokyo Electron Limited

Colloidal silica growth inhibitor and associated method and system

A technique to inhibit the growth of colloidal silica deposits on surfaces treated in phosphoric acid is described. In one embodiment, the disclosed techniques include the use of a colloidal silica growth inhibitor as an additive to a phosphoric acid solution utilized for a silicon nitride etch.
Tokyo Electron Limited

Selective self-aligned patterning of silicon germanium, germanium and type iii/v materials using a sulfur-containing mask

A method for patterning a substrate including multiple layers using a sulfur-based mask includes providing a substrate including a first layer and a second layer arranged on the first layer. The first layer includes a material selected from a group consisting of germanium, silicon germanium and type iii/v materials.
Lam Research Corporation

Method of fabricating a tunnel oxide layer and a tunnel oxide layer for a semiconductor device

A method of fabricating a tunnel oxide layer for a semiconductor memory device, the method comprising: fabricating on a substrate a first oxide layer by an in-situ-steam-generation process; and fabricating at least one further oxide layer by a furnace oxidation process, wherein during fabrication of the at least one further oxide layer, reactive gases penetrate the first oxide layer and react with the silicon substrate to form at least a first portion of the at least one further oxide layer beneath the first oxide layer.. .
X-fab Semiconductor Foundries Ag

Iron-based oxide magnetic particle powder and producing iron-based oxide magnetic particle powder

An e-type iron-based oxide magnetic particle powder has narrow particle size distribution and has a low content of fine particles which do not contribute to magnetic recording characteristics. As a result, a narrow coercive force distribution is achieved and the powder is suitable for increasing recording density of a magnetic recording medium.
Dowa Electronics Materials Co., Ltd.

Crystalline compounds for use in mechanical watches and methods of manufacture thereof

This invention teaches a new class of materials that can be used to manufacture hairsprings and/or other components of mechanical watches, and methods for manufacturing these components. The new class of materials is crystalline compounds, including, but not limited to, gallium arsenide, extrinsically doped gallium arsenide, extrinsically doped silicon, gallium nitride, extrinsically doped gallium nitride, gallium phosphide, extrinsically doped gallium phosphide, and quartz.
Firehouse Horology, Inc.

Electrostatic charge image developer, developer cartridge, and process cartridge

An electrostatic charge image developer includes a toner that includes a toner particle; and a carrier, wherein the toner particle contains a brilliant pigment, an exposed amount of the brilliant pigment contained in the toner particle is from 0.5% to 5%, the carrier has a core particle and a coating layer which covers a surface of the core particle, the coating layer contains a silicone resin and a siloxane oligomer, and a content of the siloxane oligomer is from 0.1 ppm to 500 ppm with respect to a total weight of the coating layer.. .
Fuji Xerox Co., Ltd.

Mask blank, phase shift mask, manufacturing phase shift mask, and manufacturing semiconductor device

A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an arf excimer laser are suppressed. The film transmits light of an arf excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film.
Hoya Corporation

Hologram projector

The present invention describes a hologram projector that is used to project three dimensional high definition images on the screen using various electronic devices. The hologram projector can provide an upright display that is comfortable to view while allowing the electronic device to lay flat, by incorporating a completely or partially reflective material along with the hologram projector.

Silicon modulators and related apparatus and methods

An optical mach zehnder modulator is described. The optical mach zehnder modulator may comprise a plurality of segments separated by curved waveguides.
Acacia Communications, Inc.

Automatic endless polarization controller for a silicon-on-insulator platform

A photonic platform based polarization controller providing a fixed target polarization is disclosed. The polarization controller has a polarization rotator splitter splitting the beam into first and second feeds corresponding to first and second orthogonal polarization components.

Cold weather camera kit

Various embodiments of the present disclosure may include an imaging system that includes a de-icing assembly. The de-icing assembly may include a de-icing window and a window frame.
Flir Systems, Inc.

Electro-optic device, electro-optic unit, and electronic apparatus

An electro-optic device includes a chip provided with a mirror and a drive element adapted to drive the mirror, a light-transmitting cover adapted to cover the mirror in a planar view, and a spacer having contact with one surface of the chip between the cover and the chip. The entire part of one surface of the chip having contact with the spacer is made of a first material such as silicon oxide film having first thermal conductivity, and the spacer is made of a second material such as a quartz crystal having second thermal conductivity higher than the first thermal conductivity.
Seiko Epson Corporation

Facet optical coupler

Techniques for forming a facet optical coupler to couple light at an edge of silicon substrate are described. The facet optical coupler includes a silicon substrate, a layer of second material disposed on the silicon substrate and in direct contact with the edge of the silicon substrate, and an undercut region disposed between a portion of the silicon substrate and the layer of second material.
Acacia Communications, Inc.

Coupling optical signals into silicon optoelectronic chips

A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a cmos photonic chip comprising photonic, electronic, and optoelectronic devices. The devices may be integrated in a front surface of the chip and one or more optical couplers may receive the optical signals in the front surface of the chip.
Luxtera, Inc.

Microfluidic analysis device and method

The present invention relates to a microfluidic analysis device (1) including: a substrate (20) wherein a separation channel (10) is arranged, in which an electrolyte flows, a portion of the separation channel (10) being covered with a polarisable surface (11); two longitudinal field electrodes (8a, 8b) arranged on either side of the separation channel (10); at least one control electrode (6a, 6b) positioned in the separation channel (10), the control electrode (6a, 6b) being suitable for polarising the polarisable surface (11) so as to control the speed of the electro-osmotic flow in the separation channel (10); the microfluidic analysis device (1) being characterised in that the polarisable surface (11) includes an insulating sub-layer (12) made of amorphous silicon carbide (sic) and an upper polarisable layer (13) in direct contact with the electrolyte, the control electrodes (6a, 6b) being positioned between the insulating sub-layer (12) and the upper polarisable layer (13).. .
Universite Paris-sud

Oil agent for carbon-fiber-precursor acrylic fiber, oil agent composition for carbon-fiber-precursor acrylic fiber, oil-treatment-liquid for carbon-fiber-precursor acrylic fiber, and carbon-fiber-precursor acrylic fiber bundle

An oil for a carbon fiber precursor acrylic fiber including: a hydroxybenzoate ester (a) indicated by formula (1a); an amino-modified silicone (h) indicated by formula (3e); and an organic compound (x) which is compatible with the hydroxybenzoate ester (a), in which a residual mass rate r1 at 300° c. In thermal mass analysis in an air atmosphere is 70-100 mass % inclusive, and which is a liquid at 100° c., and a carbon fiber precursor acrylic fiber bundle to which the oil for a carbon fiber precursor acrylic fiber is adhered..
Mitsubishi Chemical Corporation

Single-crystal silicon-carbide substrate and polishing solution

The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.. .
Asahi Glass Company, Limited

Polycrystalline silicon, fz single crystal silicon, and producing the same

When fz single crystal silicon is produced from polycrystalline silicon, which is synthesized by the siemens method followed by being subjected to thermal treatment and includes crystal grains having a miller index plane <111> or <220> as a principal plane and grown by the thermal treatment, and in which the x-ray diffraction intensity from either of the miller index planes <111> and <220> after the thermal treatment is 1.5 times or less the x-ray diffraction intensity before the thermal treatment, as raw material, disappearance of crystal lines in the step of forming an fz single crystal is markedly prevented.. .
Shin-etsu Chemical Co., Ltd.

Process for producing silicon single crystal

In a process for producing a silicon single crystal in which carbon is incorporated in order to inhibit crystal defects, provided is a process which easily allows carbon to be mixed and dissolved into a silicon melt. The process for producing a silicon single crystal, which involves allowing a silicon single crystal to grow during its pulling-up from the silicon melt held in a crucible, uses as at least part of a silicon raw material, crushed materials of a polycrystalline silicon rod produced by siemens process that are obtained by crushing an end of the rod in the vicinity contacting a carbon core wire holding member..
Tokuyama Corporation

Method for producing single crystal and producing silicon wafer

A method for producing a single crystal includes: bringing a seed crystal into contact with a dopant-added melt, in which a red phosphorus is added to a silicon melt, such that a resistivity of the single crystal is 0.9 mΩ·cm or less and subsequently pulling up the seed crystal, to form a straight body of the single crystal; and withdrawing the single crystal from the dopant-added melt in a state that a temperature of an upper end of the straight body is 590 degrees c. Or more..
Sumco Corporation

Tooling having a durable metallic surface over an additively formed polymer base and forming such tooling

A tool and a method for forming a tool are disclosed. The tool has a base layer additively formed from a polymer material in a desired tool shape.
The Boeing Company

Treated article, system having treated article, and process incorporating treated article

Treated articles and a process of producing the treated articles, systems having treated articles, and processes incorporating treated articles are disclosed. The treated articles include a metal or metallic substrate, and a surface treatment of the metal or metallic substrate, the surface treatment having fluorine, silicon, and carbon.
Silcotek Corp.

Honeycomb structure, and manufacturing the same

The honeycomb structure includes a pillar-shaped honeycomb structure body having porous partition walls 1 defining a plurality of cells and a circumferential wall, and a pair of electrode members disposed on the side of a side surface of the honeycomb structure body. The pair of electrode members contain metal silicon and boron, at least a part of the electrode member is made of a composite material including, as a main component, silicon containing 100 to 10000 ppm of boron in silicon.
Ngk Insulators, Ltd.

Steel for high-strength bolt, and high-strength bolt

A high-strength bolt is formed using steel for a high-strength bolt that contains: from 0.50 mass % to 0.65 mass % carbon, from 1.5 mass % to 2.5 mass % silicon, 1.0 mass % or more chromium, 0.4 mass % or less manganese, greater than 1.5 mass % molybdenum, 0.03 mass % or less phosphorus and sulfur combined, and balance iron and inevitable impurities.. .

Nucleic acid-binding solid-phase carrier and nucleic acid extraction method

A nucleic acid-binding solid-phase carrier includes a magnetic particle of an amorphous metal containing fe, cr, si, and b, and a silicon oxide film provided on the surface of the magnetic particle.. .
Seiko Epson Corporation

Uv-thickening thermally conductive silicone grease composition

A uv-thickening thermally conductive silicone grease composition: which has (a) an organopolysiloxane, the viscosity at 25° c. Of which is 50-100,000 mpa·s and which contains at least one alkenyl group in a single molecule, (b) an organohydrogenpolysiloxane, a single molecule of which contains a hydrogen atom directly bonded to at least two silicon atoms, (c) a photoactive platinum complex curing catalyst, and (d) a thermally conductive filler with a thermal conductivity of at least 10 w/m·° c.
Shin-etsu Chemical Co., Ltd.

Adhesive tape

According to one embodiment, an adhesive tape includes a film and an adhesive layer. The film includes polytetrafluoroethylene and a carbon filler.
Chukoh Chemical Industries, Ltd., Tokyo, Japan;

3d printing method utilizing a photocurable silicone composition

A method of forming a three-dimensional (3d) article comprises the steps of i) printing a first photocurable silicone composition with a 3d printer to form a layer, ii) irradiating the layer with an energy source to form an at least partially cured layer, iii) printing a second photocurable silicone composition on the at least partially cured layer with the 3d printer to form a subsequent layer, and iv) irradiating the subsequent layer with the energy source to form an at least partially cured subsequent layer. Optionally, steps iii) and iv) can be repeated with independently selected photocurable silicone compositions for any additional layer(s) to form the 3d article.
Dow Corning Corporation

Aqueous coating materials

Silicone resin dispersions containing at least one silicone resin having at least two differently substituted t units are used in aqueous coating materials producible therefrom for mineral building materials, wood or metal. The aqueous coating materials exhibit good hydrophobicity without beading, low water permeability, and acquire these properties rapidly after application..
Wacker Chemie Ag

Silicone mist inhibitor

A silicone mist inhibitor which has an excellent effect of inhibiting silicone mist and provides a composition and a cured product which have excellent storage stability is provided. A silicone mist inhibitor includes at least one selected from organic powder, inorganic powder and inorganic-organic composite powder, wherein the powder has a volume average particle size of 100 to 4000 nm.
Shin-etsu Chemical Co., Ltd.

Photocurable and thermosetting resin composition, cured product, and laminate

A curable composition includes a condensation product having a weight average molecular weight of 30,000 or less and a curing agent, the condensation product being obtained by hydrolysis and condensation of a first and secondsilane compound in the presence of a neutral salt catalyst. The condensation product also has a ratio y/x of 0.2 or less, wherein x is the number of moles of an or3 group directly bonded to silicon atoms of the first and second silane compounds, and y is the number of moles of an or3 group directly bonded to a silicon atom of the condensation product.
Kaneka Corporation

Curable composition, infrared cut filter with light-shielding film, and solid-state imaging device

The present invention provides a curable composition which is suitably used for the production of a light-shielding film which has excellent light-shielding properties, exhibits low reflectivity, has excellent pattern linearity, and is not susceptible to chipping; an infrared cut filter with a light-shielding film; and a solid-state imaging device. The curable composition according to the present invention includes a curable compound which has at least one selected from the group consisting of a fluorine atom, a silicon atom, a linear alkyl group having 8 or more carbon atoms, and a branched alkyl group having 3 or more carbon atoms, and a curable functional group; a silane coupling agent; and a black pigment..
Fujifilm Corporation

Resin composition, resin film, producing resin film, producing semiconductor device, and semiconductor device

The present invention provides a resin composition including: (a) a silicone resin containing a constitutional unit shown by the following composition formula (1) and having a weight average molecular weight of 3,000 to 500,000, (b) an epoxy resin-curing agent; and (c) a filler. This can provide a resin composition and a resin film that can mold a wafer in a lump, has good molding properties particularly to a thin-film wafer having a large diameter, gives low-warping properties, as well as good wafer protection performance, good adhesion properties, high reliability, and good heat resistance after molding, can perform a molding process favorably, and can be used for wafer level packaging favorably.
Shin-etsu Chemical Co., Ltd.

Organopolysiloxane compositions which can be crosslinked by means of a condensation reaction

Moisture curable elastomer compositions are highly suitable for use as sealants, and initially contain an organopolysiloxane having condensable groups, a tri-acyloxy functional organosilicon compound, and as fillers, anhydrite and silica. The compositions have very low modulus and accommodate high joint movement, while being storage stable.
Wacker Chemie Ag

Formulation of terpolymers based on alkyl acrylates employed as antifoaming of gasified heavy and super-heavy crude oils

The present invention is related to the application of terpolymers based on alkyl acrylates as defoamers of gasified crude oils, with densities between 10 and 40° api. The evaluation of terpolymers based on alkyl acrylates at conditions similar to those of gas-liquid separators has shown that the terpolymers are efficient as inhibitors of the foam formation in heavy and super-heavy crude oil, abating the foam between 15 and 50% faster than in non-dosed crude oil (blank).
Instituto Mexicano Del PetrÓleo

Fluorosilicon nitrile compounds

Novel fluorosilicon nitrile compounds, and methods of preparing them, are described. The fluorosilicon nitrile compounds are characterized by having a total of four substituents attached to a silicon atom, wherein one or two of the substituents are fluorine atoms, one or two of the substituents are cyanoalkyl groups, which are the same as or different from each other, and the remainder of the substituents, if any, are alkyl groups, which are the same as or different from each other..
Arkema Inc.

Method for producing an aroma substance

Where r1 is alkyl of 1 to 4 carbon atoms, comprises reacting cyclohexene with hydrogen peroxide and an alcohol r1oh in the presence of a catalyst comprising a zeolite of framework structure mww, wherein the framework of the zeolite comprises silicon, titanium, boron, oxygen and hydrogen.. .

Super-smooth glaze and preparation method thereof

The present invention relates to a super-smooth glaze and a preparation method thereof, and belongs to the field of ceramic machining, wherein each component in parts by weight is: potassium feldspar, quartz, kaolin, calcite, dolomite, boric acid, aluminum oxide, silicon oxide, calcium oxide, potassium oxide, sodium oxide, zinc oxide, and barium oxide; a mixture weighed in proportion is disposed in a planetary quick ball mill, and pure water of 30˜40 wt % to the total weight of the mixture is added to ball-mill the mixture to particle sizes of 0.5˜1.0 μm, thus obtaining the super-smooth glaze. The method enables the surface of a glaze layer to be highly smooth and makes the roughness of the glaze be relatively reduced than that of an ordinary ceramic glaze..
Da-han International Holding Limited

Process for preparing monohydrogentrihalosilanes

A process for preparing a product including a monohydrogentrihalosilane is disclosed. The process includes the steps of: 1) initially charging a reactor with a contact mass including both fresh silicon and recycled contact mass, where the recycled contact mass is obtained from during or after a production phase of an inorganic direct process reaction for production of a monohydrogentrihalosilane; and thereafter 2) feeding to the reactor a hydrogen halide and additional fresh silicon, thereby forming the product..
Dow Corning Corporation

Poly-silicon manufacturing apparatus and method using high-efficiency hybrid horizontal reactor

According to the present invention, there is provided a polysilicon production apparatus including: a horizontal reaction tube having an inlet port through which gaseous raw materials including reactant gases and a reducing gas are supplied, an outlet port through which residual gases exit, a reaction surface with which the gaseous raw materials come into contact, and bottom openings through which molten polysilicon produced by the reactions of the gaseous raw materials is discharged; and first heating means adapted to heat the reaction surface of the horizontal reaction tube. The horizontal reaction tube includes reaction regions consisting of first reaction regions where polysilicon is deposited and second reaction regions where reaction by-products are converted to the reactant gases.
Lg Chem, Ltd.

Portable water purifying bottle

A portable water purifying bottle comprises: an upper cover, having a water output port; a filter core component, disposed inside the upper cover, and located below the water output port; and a plastic cup sleeve, sleeved into a lower portion of the upper cover. The portable water purifying bottle is simple in design, the plastic cup sleeve made of silicone for storing water is retractable for easy carrying, thus fulfilling the needs of outdoor user.
Xiamen Runner Industrial Corporation

Fluid container with internal perforated compartment

The present invention provides a container for drinking fluids wherein the container has an integrated interior compartment for storing solid elements used for treating drinking fluids. The interior compartment includes a plurality of perforations that allow the fluid found in the container to flow through the interior compartment to allow such fluid to interact with the contents of the interior chamber.
Dyln Lifestyle, Llc

Transfer sheet

There is provided a transfer sheet with improvement in smudges and blurs of a transfer layer when printed matters are produced even after storing the transfer sheet under high temperatures. The transfer sheet according to the present invention comprises a substrate, and in the order a peel layer and a transfer layer on the substrate, wherein the peel layer contains a binder resin, a silicone oil and/or a wax component and the total contents of the silicone oil and the wax component in the peel layer is 0.1 mass % or more and 15 mass % or less, based on the solid content of mass of the binder resin..
Dai Nippon Printing Co., Ltd.

Cap for ink tank, ink tank, and ink-jet recording apparatus

There is provided an ink tank cap configured to open and close an ink inlet port of an ink tank, the ink tank cap including a contacting portion contacting with the ink inlet port, wherein the contacting portion of the ink tank cap is formed of an ethylene-propylene-diene rubber containing silicone.. .
Brother Kogyo Kabushiki Kaisha

Casting cores and producing slips

The present disclosure relates to casting cores. The teachings thereof may be embodied in methods for producing a slip and components produced using such methods.
Siemens Aktiengesellschaft

Eutectic brazing compositions, and related processes and devices

An active braze alloy composition is described, including nickel; or a combination of nickel and cobalt; about 2% by weight to about 30% by weight germanium; and about 1% by weight to about 5% by weight boron and about 0.5% by weight to about 5% by weight of at least active element. The composition is free of silicon.
General Electric Company

Brazing compositions for ductile braze structures, and related processes and devices

This disclosure includes the description of a braze alloy composition. The braze composition contains nickel, about 5% by weight to about 25% by weight germanium; and about 1% by weight to about 4% by weight boron.
General Electric Company

Porous material, manufacturing porous material, and honeycomb structure

Provided is a porous material which is not easily damaged even when being exposed to a high temperature in a low oxygen atmosphere, and has heat resistance improved. A porous material includes aggregates formed of a nonoxide containing silicon and a binding material formed of an oxide ceramic binding the aggregates to each other while keeping a plurality of pores.
Ngk Insulators, Ltd.

Organic compounds

A pharmaceutical composition comprises octreotide acetate microparticles of linear poly (lactide-co-glycolide) polymer wherein the polymer contains less than 1% silicone oil or heptane.. .
Novartis Ag

Cosmetic compositions comprising silicone and hydrocarbon capable of forming a multilayer structure after application to a keratinous material

Cosmetic compositions capable of forming a multilayer structure after application to a keratinous material are provided, as well as methods of applying such compositions to a keratinous material. Certain cosmetic compositions comprises at least two immiscible components: component a which comprises about 0.01% to 60% by weight with respect to the total weight of the composition of at least one hydrocarbon-containing film forming agent having at least one glass transition temperature which is lower than normal human body temperature; and component b which comprises about 0.01% to 90% by weight with respect to the total weight of the composition of one or more silicone compounds in amounts sufficient to achieve a viscosity of about 1,000 cst to 10,000,000 cst, wherein the weight ratio of hydrocarbon-containing film forming agent(s) in component a to silicone compound(s) in component b is from about 1:50 to 50:1..
L'oreal

Cosmetic compositions comprising silicone capable of forming a multilayer structure after application to a keratinous material

Cosmetic compositions capable of forming a multilayer structure after application to a keratinous material are provided, as well as methods of applying such compositions to a keratinous material. Certain cosmetic compositions comprises at least two immiscible components: component a which comprises about 0.01% to 60% by weight with respect to the total weight of the composition of at least one silicone-containing film forming agent having at least one glass transition temperature which is lower than normal human body temperature; and component b which comprises about 0.01% to 90% by weight with respect to the total weight of the composition of one or more silicone compounds in amounts sufficient to achieve a viscosity of about 1,000 cst to 10,000,000 cst, wherein the weight ratio of silicone-containing film forming agent(s) in component a to silicone compound(s) in component b is from about 1:50 to 50:1..
L'oreal

Compositions comprising a silicone surfactant, a silicone elastomer powder and an organo-modified clay

Ethanol at a content by weight ranging from 8% to 18% relative to the total weight of said composition.. .

Hernia repair device and methods

An improved inguinal hernia repair system is presented that is identical to the above except it does not contain the hydrophobic silicone component.. .

Lecithin-based spray adjuvant containing organosilicon wetting agents

An adjuvant composition contains lecithin and an organosilicon surfactant as defined herein.. .
Momentive Performance Materials Inc.

Lateral silicon nanospikes fabricated using metal-assisted chemical etching

The present disclosure relates to methods for forming an antimicrobial nanostructure and antimicrobial articles. The methods may include: providing a master template of a layout of the antimicrobial nanostructure on a silicon substrate, depositing a silicon nitride layer on a top surface of the silicon substrate, forming a patterned lithographic resist mask layer on a top surface of the silicon nitride layer, generating certain silicon pillars according to the patterned lithographic resist mask using a resist and reactive ion etching, forming certain lateral silicon nanospikes on the silicon pillars by performing metal assisted chemical etching (macetch), and removing the silicon nitride layer and bonding a top cover glass on the silicon pillars to form the antimicrobial nanostructure having lateral silicon nanospikes.
International Business Machines Corporation

Wafer-level manufacturing embedding passive element in glass substrate

A wafer-level manufacturing method for embedding a passive element in a glass substrate is disclosed. A highly doped silicon wafer is dry etched to form a highly doped silicon mould wafer, containing highly doped silicon passive component structures mould seated in cavity arrays; a glass wafer is anodically bonded to the highly doped silicon mould wafer in vacuum pressure to seal the cavity arrays; the bonded wafers are heated so that the glass melts and fills gaps in the cavity arrays, annealing and cooling are performed, and a reflowed wafer is formed; the upper glass substrate of the reflowed wafer is grinded and polished to expose the highly doped silicon passives; the passive component structure mould embedded in the glass substrate is fully etched; the blind holes formed in the glass substrates after the passive component structure mould has been etched is filled with copper by electroplating; the highly doped silicon substrate and unetched silicon between the cavity arrays are etched, and several glass substrates embedded with a passive element are obtained; to form electrodes for the passives, a metal adhesion layer is deposited, and a metal conductive layer is electroplated.
Southeast University

Silicon steel sheet for motor

A silicon steel sheet for a motor contains: a peripheral extension, a plurality of main teeth, multiple auxiliary teeth, a plurality of first pole shoes, and multiple second pole shoes. Each main tooth is separated from each auxiliary tooth and is defined between any two auxiliary teeth, each first pole shoe is in connection with each main tooth, and each second pole shoe is coupled with each auxiliary tooth.

Silicon steel sheet for motor

A silicon steel sheet for a motor contains: a peripheral extension, a plurality of main teeth, multiple auxiliary teeth, a plurality of first pole shoes, and multiple second pole shoes. Each main tooth is separated from each auxiliary tooth and is defined between any two auxiliary teeth, and each first pole shoe is in connection with any two main teeth, and each second pole shoe is coupled with any two auxiliary teeth.

Silicon-based solid electrolyte for rechargeable battery

The present application discloses s an electrochemical cell (battery) comprising a hydrogen storage negative electrode (anode), a positive electrode (cathode) and a solid proton-conducting electrolyte in contact with the electrodes. The solid proton-conducting electrolyte comprises a silicon material which comprises at least 35 at % silicon..
Basf Corporation

Method to fabricate discreet vertical transistors

The present disclosure generally relates to the fabrication of metal-oxide-semiconductor (mos) select transistors in a vertical orientation such that the transistor pair fits within the footprint of a 4f2 memory cell. The present disclosure further relates to the simultaneous fabrication of a vertical stack of transistors in which each transistor is distinct, as opposed to being serially connected in a nand-like string.
Hgst Netherlands B.v.

Electronic component having a reinforced hollowed structure

Provide an electronic component that has a hollowed structure and is capable of suppressing the deformation of the hollowed structure due to the pressure during the module resin molding. The electronic component includes a device substrate 2, a driver portion 3 formed on one of the principle surfaces of the device substrate 2, a protection portion 4 configured to cover the driver portion 3 so as to form a hollowed space 8 around the driver portion 3, an adhesion layer 10 that is made of a resin and arranged above the protection portion 4, and a reinforcing plate 11 arranged on the adhesion layer 10, wherein the reinforcing plate 11 is a silicon substrate..
Murata Manufacturing Co., Ltd.

Thermoelectric module

A thermoelectric module may include a metallic module housing surrounding a module interior and conductor bridges arranged therein. The module housing may include a cold side wall and a warm side wall connected to cold-side conductor bridges and warm-side conductor bridges, respectively, in a thermally conductive, electrically insulating and permanent manner.
Mahle International Gmbh

Contact for silicon heterojunction solar cells

A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact.
International Business Machines Corporation

Manufacturing solar cell and solar cell

A manufacturing method for a solar cell includes a step of forming a p-type diffusion layer on one principal surface side of an n-type silicon substrate and forming an n-type silicon substrate having a pn junction, a step of forming a laminated film of a silicon oxide film and a silicon nitride film as a passivation film on a surface on a side of a light receiving surface that is an n type, a step of forming an open region in the passivation film, a step of diffusing n-type impurities with respect to the open region of the passivation film by using the passivation film as a mask to form a high-concentration diffusion region, and a step of forming a metal electrode selectively in the high-concentration diffusion region that is exposed in the open region of the passivation film.. .
Mitsubishi Electric Corporation

Screen printing electrical contacts to nanostructured areas

A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature.
Advanced Silicon Group, Inc.

Method of manufacturing thin film transistor

Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.. .
Samsung Display Co., Ltd.

Semiconductor device

The semiconductor device includes a transistor including an oxide semiconductor film having a channel formation region, a gate insulating film, and a gate electrode layer. In the transistor, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the thickness of the gate insulating film is large (equivalent oxide thickness which is obtained by converting into a thickness of silicon oxide containing nitrogen is 5 nm or more and 50 nm or less, preferably 10 nm or more and 40 nm or less).
Semiconductor Energy Laboratory Co., Ltd.

Thin film transistor

A thin film transistor includes an oxide semiconductor layer including a channel region, and a source region and a drain region having a resistivity lower than that of the channel region; a gate insulating layer disposed on the channel region of the oxide semiconductor layer; a gate electrode disposed on the gate insulating layer; and an aluminum oxide layer covering the lateral surface of the gate insulating layer, and the source region and the drain region, wherein the gate insulating layer has a multi-layer structure including a first insulating layer and a second insulating layer, and the first insulating layer contains silicon oxide as a main component, and is disposed on and in contact with the channel region.. .
Joled Inc.

Semiconductor device including mos transistor having silicided source/drain region and fabricating the same

A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or carbon. In the method, a gate electrode is formed on a semiconductor substrate with a gate insulating layer interposed therebetween.
Samsung Electronics Co., Ltd.

Polysilicon design for replacement gate technology

The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.

Semiconductor device having a graphene layer, and manufacturing thereof

A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; bonding a first side of the silicon carbide wafer to the carrier wafer; splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting; and forming a graphene material on the silicon carbide layer.. .
Infineon Technologies Ag

Display device and manufacturing the same

A plurality of thin film transistors provided in a peripheral region are first staggered thin film transistors where a first channel layer configured of low-temperature polysilicon is included, and the first channel layer is not interposed between a first source electrode and a first gate electrode, and between a first drain electrode and the first gate electrode. A plurality of thin film transistors provided in a display region are second staggered thin film transistors where a second channel layer configured of an oxide semiconductor is included, and the second channel layer is not interposed between a second source electrode and a second gate electrode, and between a second drain electrode and the second gate electrode.
Japan Display Inc.

Semiconductor device, manufacturing method thereof, and separation apparatus

A technique is described in which a transistor formed using an oxide semiconductor film, a transistor formed using a polysilicon film, a transistor formed using an amorphous silicon film or the like, a transistor formed using an organic semiconductor film, a light-emitting element, or a passive element is separated from a glass substrate by light or heat. An oxide layer is formed over a light-transmitting substrate, a metal layer is selectively formed over the oxide layer, a resin layer is formed over the metal layer, an element layer is formed over the resin layer, a flexible film is fixed to the element layer, the resin layer and the metal layer are irradiated with light through the light-transmitting substrate, the light-transmitting substrate is separated, and a bottom surface of the metal layer is made bare..
Semiconductor Energy Laboratory Co., Ltd.

Thin film transistor, thin film transistor panel, and manufacturing the same

A thin film transistor includes a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode and includes a channel layer comprising an oxide semiconductor and an auxiliary layer comprising amorphous silicon.
Samsung Display Co., Ltd.

Semiconductor device and manufacturing the same

An misfet has a gate electrode formed on a semiconductor substrate via a gate insulating film, and a source region and a drain region formed inside the semiconductor substrate so as to sandwich the gate electrode. And, a first silicide layer is formed on surfaces of the source region and the drain region, and a second silicide layer is formed on a surface of the gate electrode.
Renesas Electronics Corporation

Semiconductor device and manufacturing the semiconductor device

In a monos memory, withstand voltage is increased between a control gate electrode over an ono film having a charge accumulating part and a semiconductor substrate. When a silicon film is processed to form a control gate electrode, dry etching is performed for a relatively long time, thereby a recess is formed in a sidewall of the control gate electrode.
Renesas Electronics Corporation

Electrostatic discharge protection using a guard region

A silicon controlled rectifier (scr) circuit is configured to shunt electrostatic discharge (esd) current from a node to a reference voltage. The scr circuit includes a first bipolar pnp transistor having a first emitter connected to the node, a first base, and a first collector.
Nxp B.v.

Semiconductor power device having shielded gate structure and esd clamp diode manufactured with less mask process

A semiconductor power device having shielded gate structure in an active area and having esd clamp diode with two poly-silicon layer process is disclosed, wherein: the shielded gate structure comprises a first poly-silicon layer to serve as a shielded electrode and a second poly-silicon layer to serve as a gate electrode, and the esd clamp diode formed between two protruding electrodes is also formed by the first poly-silicon layer. A mask specially used to define the esd clamp diode portion is saved..
Force Mos Technology Co., Ltd

Chip alignment utilizing superomniphobic surface treatment of silicon die

Certain embodiments of the present disclosure provide a method for soldering a chip onto a surface. The method generally includes forming a bonding pad on the surface on which the chip is to be soldered, wherein the bonding pad is surrounded, at least in part, by dielectric material.
International Business Machines Corporation

Tungsten feature fill

Described herein are methods of filling features with tungsten and related systems and apparatus. The methods include inside-out fill techniques as well as conformal deposition in features.
Novellus Systems, Inc.

Methods of manufacturing a semiconductor device

In a method of manufacturing a semiconductor device, a first insulating interlayer and a sacrificial layer is sequentially formed on a substrate. The sacrificial layer is partially removed to form a first opening exposing an upper surface of the first insulating interlayer.
Samsung Electronics Co., Ltd.

Method of manufacturing silicon on insulator substrate

A method of manufacturing a silicon on insulator substrate includes: preparing a semiconductor substrate including a rear side semiconductor layer, an insulating layer, and a front side semiconductor layer, a first surface of the insulating layer being in contact with a surface of the rear side semiconductor layer, and a first surface of the front side semiconductor layer being in contact with a second surface of the insulating layer; forming a high concentration region in which an impurity concentration is increased in the front side semiconductor layer, by injecting impurities into the front side semiconductor layer; heating the semiconductor substrate having the high concentration region; and epitaxially growing an additional semiconductor layer on a second surface of the front side semiconductor layer of the heated semiconductor substrate, the additional semiconductor layer having a lower impurity concentration than the high concentration region.. .
Sumco Corporation

Technique for oxidizing plasma post-treatment for reducing photolithography poisoning and associated structures

Embodiments of the present disclosure describe techniques for oxidizing plasma post-treatment for reducing photolithography poisoning. In one embodiment, an apparatus includes a dielectric layer with a plurality of routing features; and an etch stop layer, having a first interface region coupled with the dielectric layer and a second interface region disposed opposite to the first interface region.

Endless belt for image forming apparatus, belt unit for image forming apparatus, image forming apparatus, resin composition, manufacturing endless belt for image forming apparatus, and manufacturing resin composition

An endless belt for an image forming apparatus is provided with a resin layer having a sea-island structure including an island part containing a silicone-modified polyetherimide and a sea part containing a polyetherimide other than the silicone-modified polyetherimide and containing carbon black.. .
Fuji Xerox Co., Ltd.

Ultra-responsive phase shifters for depletion mode silcon modulators

A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters.
Elenion Technologies, Llc

Cmos based micro-photonic systems

This invention relates to cmos based micro-photonic systems comprising an optical source, means for optical transmission, and a detector, wherein the optical source is capable of emitting light having a wavelength being in a range in which a nitride comprising layer of said means for optical transmission is transparent and being below a detection threshold of said detector so as to enable the generation of a micro-photonic system in silicon integrated circuit technology.. .
Tshwane University Of Technology

Method of determining a concentration of a material not dissolved by silicon etchants contaminating a product

A method of determining a concentration of plastic or other material not dissolved by silicon etchants contaminating a silicon product comprising: obtaining a sample of the silicon product contaminated with the plastic or other material not dissolved by silicon etchants; placing the sample of the silicon product into a ultrasonic bath liquid to produce a slurry comprising the ultrasonic bath liquid, silicon dust, and the plastic or other material not dissolved by silicon etchants; filtering the slurry with a first filter to produce a cake comprising the silicon dust and the plastic or other material not dissolved by silicon etchants separated from the sample of the silicon product; and analyzing the cake to determine the concentration of plastic or other material not dissolved by silicon etchants contaminating the silicon product.. .
Hemlock Semiconductor Corporation

Pressure sensor, production pressure sensor, altimeter, electronic apparatus, and moving object

A pressure sensor includes a flexible diaphragm which is flexed by pressure changes and a coating layer on one surface of the diaphragm. The diaphragm is a single layer containing silicon, nitrogen, and oxygen.
Seiko Epson Corporation

Methods of manufacturing cominbination thrust-bearing and radial bearing apparatuses

Embodiments of the invention relate to bearing apparatuses in which one bearing surface of the bearing apparatus includes diamond, while another bearing surface includes a non-diamond superhard material (e.g., silicon carbide). For example, a bearing apparatus may include a bearing stator assembly and a bearing rotor assembly.
Us Synthetic Corporation

Silicon carbide epitaxial substrate and manufacturing silicon carbide semiconductor device

The silicon carbide layer includes a second main surface opposite to a surface in contact with the silicon carbide single crystal substrate. The second main surface corresponds to a plane inclined relative to a {0001} plane in an off direction.
Sumitomo Electric Industries, Ltd.

Metallic nickel-based acid-resistant material

A weld filler includes a nickel-molybdenum-iron alloy with high corrosion resistance with respect to reducing media at high temperatures, consisting of (in % by mass): 61 to 63% nickel, 24 to 26% molybdenum, 10 to 14% iron, 0.20 to 0.40% niobium, 0.1 to 0.3% aluminum, 0.01 to 1.0% chromium, 0.1 to 1.0% manganese, at most 0.5% copper, at most 0.01% carbon, at most 0.1% silicon, at most 0.02% phosphorus, at most 0.01% sulphur, at most 1.0% cobalt, and further smelting-related impurities. The weld filler can be welded to fill a joint..
Vdm Metals International Gmbh

Printing inks and coatings compositions for polyethylene coated board

The present invention provides a printing ink or coating composition comprising a self-crosslinking acrylic polymer, a coalescent and a silicone emulsion wherein the self-crosslinking acrylic polymer has a glass transition temperature of greater than 25° c. Furthermore the present invention also provides a process for preparing a coated substrate, in particular a polyboard substrate and an article made from the coated substrate, such as a milk or juice carton..
Sun Chemical Corporation

Curable polymers comprising silsesquioxane polymer core silsesquioxane polymer outer layer, and reactive groups

Curable silsesquioxane polymers are described comprising a core comprising a first silsesquioxane polymer and an outer layer comprising a second silsesquioxane polymer bonded to the core. The silsesquioxane polymer of the core, outer layer, or combination thereof comprises reactive groups that are not ethylenically unsaturated groups.
3m Innovative Properties Company

Uv curable silicone composition, cured product thereof, optical element encapsulation material comprised of the composition, and optical element encapsulated by the encapsulation material

(b) 0.1 to 10 parts by mass of a photopolymerization initiator.. .

Process for production of halosilanes from silicon-containing ternary intermetallic compounds

A process for preparing a reaction product including a halosilane includes: contacting an unsaturated hydrocarbyl halide and a ternary intermetallic compound at a temperature of 300° c. To 700° c.
Dow Corning Corporation

Preparation of fluorosilicon compounds

Methods of synthesizing fluorosilanes containing cyano-substituted alkyl groups are provided. For example, 3-cyano-propyldimethylfluorosilane may be produced by reacting tetramethyldisiloxane and boron trifluoride to obtain fluorodimethylsilane and then reacting the fluorodimethylsilane with allyl cyanide, in the presence of a hydrosilylation catalyst.
Arkema Inc.

Method for producing aryl-functional silanes

A method for preparing a reaction product including an aryl-functional silane includes sequential steps (1) and (2). Step (1) is contacting, under silicon deposition conditions, (a) an ingredient including (i) a halosilane such as silicon tetrahalide and optionally (ii) hydrogen (h2); and (b) a metal combination comprising copper (cu) and at least one other metal, where the at least one other metal is selected from the group consisting of gold (au), cobalt (co), chromium (cr), iron (fe), magnesium (mg), manganese (mn), nickel (ni), palladium (pd), and silver (ag); thereby forming a silicon alloy catalyst comprising si, cu and the at least one other metal.
Dow Corning Corporation

Cordierite-based sintered body, producing the same, and composite substrate

A cordierite-based sintered body according to the present invention contains cordierite as a main component and silicon nitride or silicon carbide. The cordierite-based sintered body preferably has a thermal expansion coefficient less than 2.4 ppm; ° c.
Ngk Insulators, Ltd.

Mullite-containing sintered body, manufacturing the same, and composite substrate

A mullite-containing sintered body according to the present invention contains mullite and at least one selected from the group consisting of silicon nitride, silicon oxynitride, and sialon. It is preferable that the mullite-containing sintered body have a thermal expansion coefficient of less than 4.3 ppm/° c.
Ngk Insulators, Ltd.

Tungsten sulfide thin film and preparation method therefor

The present invention relates to the technical field of inorganic nanofilm materials, and provides a method for preparing a tungsten sulfide thin film. The method comprises the steps of: applying a one-atom-thick w layer on a silicon substrate; applying a one-atom-thick s layer on the w layer; and applying another one-atom-thick w layer on the s layer, to obtain a thin film that is a single-layer thin film having a w—s—w layered structure.
Shenzhen University

System and an ovenized silicon platform using si/sio2 hybrid supports

The present invention generally relates to an ovenized platform and a fabrication process thereof. Specifically, the invention relates to an ovenized hybrid si/sio2 platform compatible with typical cmos and mems fabrication processes and methods of its manufacture.
Evigia Systems, Inc.

Atomic layer deposition layer for a microelectromechanical system (mems) device

System and method for forming an ald assembly on a surface of a microelectromechanical system (mems) device comprises a substrate having a surface and the ald assembly is at least partially disposed on the surface of the substrate, wherein the ald assembly is at least one of hydrophobic and hydrophilic properties. The ald layer further includes a first ald and a second ald.
Robert Bosch Gmbh





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