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Silicon patents

      

This page is updated frequently with new Silicon-related patent applications.




 Halogen-free and phosphorus-free silicone resin composition, prepreg, laminate board, copper-clad plate using the same, and printed circuit board patent thumbnailnew patent Halogen-free and phosphorus-free silicone resin composition, prepreg, laminate board, copper-clad plate using the same, and printed circuit board
Provided are a halogen-free phosphorus-free silicon resin composition, and prepreg and laminated board using the same, and printed circuit board, the silicon resin composition comprising the following components in parts by solid weight: 50-90 parts of an organic silicon resin, 20-80 parts of a vinyl-terminated silicon oil, 0.1-5 parts of a viscosity enhancing agent, 0-60 parts of a filler, 0.0001-0.5 parts of a catalyst, and 0.00001-0.1 parts of an inhibitor, a mole ratio between si—h in a cross-linking agent and si-vi in the organic silicon resin being 1.0-1.7. The resin body of the resin composition is a thermosetting silicon resin, and the laminated board prepared thereby has good heat and flame resistance and an extremely low dielectric constant (dk) and dielectric loss (df)..
Shengyi Technology Co., Ltd.


 Temperature-insensitive optical transceiver patent thumbnailnew patent Temperature-insensitive optical transceiver
A transceiver separates wavelength-division-multiplexing (wdm) components into two groups, one of which is more sensitive to temperature than the other group. The temperature-sensitive group of optical components is implemented on a first substrate in the transceiver that has a lower thermo-optic coefficient than a second substrate in the transceiver, which contains the group of optical components that is less temperature sensitive.
Oracle International Corporation


 Secondary battery patent thumbnailnew patent Secondary battery
An object of the present invention is to provide a secondary battery having high energy density with long-term life. The present invention relates to a secondary battery comprising a negative electrode comprising a silicon-containing compound and an electrolyte solution comprising a fluorine-containing ether compound, a fluorine-containing phosphoric acid ester, a sulfone compound and a cyclic carbonate compound in a predetermined amount respectively..
Nec Corporation


 Silicon-based anode active material and  manufacturing same patent thumbnailnew patent Silicon-based anode active material and manufacturing same
The present invention relates to a silicon-based anode active material and a method for manufacturing the same. The silicon-based anode active material according to an embodiment of the present invention comprises: particles comprising silicon and oxygen combined with the silicon, and having a carbon-based conductive film coated on the outermost periphery thereof; and boron doped inside the particles, wherein with respect to the total weight of the particles and the doped boron, the boron is included in the amount of 0.01 weight % to 17 weight %, and the oxygen is included in the amount of 16 weight % to 29 weight %..
Orange Power Ltd.


 Negative electrode active material for electric device and electric device using the same patent thumbnailnew patent Negative electrode active material for electric device and electric device using the same
A negative electrode active material for electric device is used which includes a silicon-containing alloy having a structure in which a silicide phase containing a silicide of a transition metal is dispersed in a parent phase containing amorphous or low crystalline silicon as a main component and a predetermined composition and in which a ratio value (b/a) of a diffraction peak intensity b of a silicide of a transition metal in a range of 2θ=37 to 45° to a diffraction peak intensity a of a (111) plane of si in a range of 2θ=24 to 33° is 0.41 or more in an x-ray diffraction measurement of the silicon-containing alloy using a cukα1 ray.. .
Nissan Motor Co., Ltd.


 Negative-electrode active material for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery patent thumbnailnew patent Negative-electrode active material for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery
A non-aqueous electrolyte secondary battery containing a silicon material, wherein the negative-electrode active material can constitute a non-aqueous electrolyte secondary battery having high charge capacity, high initial charge/discharge efficiency, and good cycle characteristics. A negative-electrode active material particle according to an embodiment includes a lithium silicate phase represented by li2zsio(2+z) {0<z<2} and particles dispersed in the lithium silicate phase.
Sanyo Electric Co., Ltd.


 Silicon-carbon composite material containing carbon material comprising layers patent thumbnailnew patent Silicon-carbon composite material containing carbon material comprising layers
A silicon—carbon composite material contains: a carbon material comprising layers; and silicon particles supported between the layers of the carbon material. The specific surface area of the silicon—carbon composite material is 200 m2/g or more as determined by the bet method using nitrogen gas adsorption..
Panasonic Intellectual Property Management Co., Ltd.


 Composite powder for use in an anode of a lithium ion battery,  preparing such a composite powder and  analysing such a composite powder patent thumbnailnew patent Composite powder for use in an anode of a lithium ion battery, preparing such a composite powder and analysing such a composite powder
Composite powder for use in an anode of a lithium ion battery, whereby the particles of the composite powder comprise silicon-based domains in a matrix, whereby the individual silicon-based domains are either free silicon-based domains that are not or not completely embedded in the matrix or are fully embedded silicon-based domains that are completely surrounded by the matrix, whereby the percentage of free silicon-based domains is lower than or equal to 4 weight % of the total amount of si in metallic or oxidized state in the composite powder.. .
Showa Denko K.k.


 Negative electrode active material for nonaqueous electrolyte secondary batteries patent thumbnailnew patent Negative electrode active material for nonaqueous electrolyte secondary batteries
Provided is a novel method of preparing a negative electrode for nonaqueous electrolyte secondary batteries, which contains silicon and is capable of improving cycle characteristics and is also capable of suppressing aggregation of active material particles in a slurry. After formation of a molten liquid by any one of methods (i) to described in the specification, the molten liquid is micronized by atomization or liquid quenching, thereby forming a micronized active material in the form of powder, and the micronized active material is pulverized and classified in a nitrogen atmosphere in which air is present in an amount of less than 1%, and the balance is composed of nitrogen, to thereby adjust the particle size of the micronized active material..
Mitsui Mining & Smelting Co., Ltd.


 Composition for organic electronic device encapsulant and encapsulant formed using the same patent thumbnailnew patent Composition for organic electronic device encapsulant and encapsulant formed using the same
The present application relates to a composition for an encapsulant and an encapsulant formed using the same. The composition for an encapsulant according to one embodiment of the present application includes 1) a silicone resin; 2) one or more types of moisture absorbents; and 3) one or more types of photoinitiators..
Momentive Performance Materials Korea Co., Ltd.


new patent

Method for manufacturing substrate for solar cell and substrate for solar cell

The present invention is a method for manufacturing a substrate for a solar cell composed of a single crystal silicon, including the steps of: producing a silicon single crystal ingot; slicing a silicon substrate from the silicon single crystal ingot; and subjecting the silicon substrate to low temperature thermal treatment at a temperature of 800° c. Or more and less than 1200° c., wherein the silicon single crystal ingot or the silicon substrate is subjected to high temperature thermal treatment at a temperature of 1200° c.
Shin-etsu Chemical Co., Ltd.

new patent

Semiconductor device

A semiconductor device may include: a semiconductor substrate, a device isolating layer embedded within the semiconductor substrate and defining an active region, a channel region formed in the active region, a gate electrode disposed above the channel region, a gate insulating layer provided between the channel region and the gate electrode, and a silicon germanium epitaxial layer adjacent to the channel region within the active region and including a first epitaxial layer containing a first concentration of germanium, a second epitaxial layer containing a second concentration of germanium, higher than the first concentration, and a third epitaxial layer containing a third concentration of germanium, lower than the second concentration, the first to third epitaxial layers being sequentially stacked on one another in that order.. .
Samsung Electronics Co., Ltd.

new patent

Method of manufacturing semiconductor device

Described is a technique for uniformly doping a silicon substrate having a fin structure with a dopant. A method of manufacturing a semiconductor device may includes: (a) forming a dopant-containing film containing a dopant on a silicon film by performing a cycle a predetermined number of times, the, cycle including: (a-1) forming a first dopant-containing film by supplying a first dopant-containing gas containing the dopant and a first ligand to a substrate having thereon the silicon film and one of a silicon oxide film and a silicon nitride film; and (a-2) forming a second dopant-containing film by supplying a second dopant-containing gas containing the dopant and a second ligand different from and reactive with the first ligand to the substrate; and (b) forming a doped silicon film by annealing the substrate having the dopant-containing film thereon to diffuse the dopant into the silicon film..
Hitachi Kokusai Electric Inc.

new patent

Novel embedded shape sige for strained channel transistors

An integrated circuit die includes a silicon substrate. Pmos and nmos transistors are formed on the silicon substrate.
Stmicroelectronics, Inc.

new patent

Contact formation on germanium-containing substrates using hydrogenated silicon

A method and structure is provided in which germanium or a germanium tin alloy can be used as a channel material in either planar or non-planar architectures, with a functional gate structure formed utilizing either a gate first or gate last process. After formation of the functional gate structure, and contact openings within a middle-of-the-line (mol) dielectric material, a hydrogenated silicon layer is formed that includes hydrogenated crystalline silicon regions disposed over the germanium or a germanium tin alloy, and hydrogenated amorphous silicon regions disposed over dielectric material.
International Business Machines Corporation

new patent

Metal silicide, metal germanide, methods for making the same

In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate.
Asm International N.v.

new patent

Thin poly field plate design

The present disclosure relates to a high voltage transistor device having a thin polysilicon film field plate, and an associated method of formation. In some embodiments, the high voltage transistor device has a gate electrode disposed between source and drain regions and separated from a substrate by a gate dielectric.
Taiwan Semiconductor Manufacturing Co., Ltd.

new patent

Semiconductor structure with a silicon germanium alloy fin and silicon germanium alloy pad structure

A semiconductor structure is provided that includes a silicon germanium alloy fin having a second germanium content located on a first portion of a substrate. The structure further includes a laterally graded silicon germanium alloy material portion located on a second portion of the substrate.
International Business Machines Corporation

new patent

Manufacturing tft backplane and tft backplane

The present invention provides a manufacture method of a tft backplate and a tft backplate. By utilizing the oxide semiconductor to manufacture the switch tft, and utilizing the advantages of rapid switch and lower leakage current of the oxide semiconductor, the switch speed of the switch tft is raised and the leakage current is lowered; by utilizing the polysilicon to manufacture the drive tft, and utilizing the properties of higher electron mobility and the uniform grain of the polysilicon, the electron mobility and the current output consistency of the drive tft is promoted.
Shenzhen China Star Optoelectronics Technology Co. Ltd.

new patent

Method of manufacturing thin film transistor, dehydrogenating performing the same, and organic light emitting display device including thin film transistor manufactured by the same

Provided are a method of manufacturing a thin film transistor, a dehydrogenating apparatus for performing the method, and an organic light emitting display device including a thin film transistor manufactured by the same. A method of manufacturing a thin film transistor includes reducing a content of oxygen in a chamber for performing a dehydrogenation process of an amorphous silicon layer from a first value to a second value, inserting a substrate on which the amorphous silicon layer is formed into the chamber, heating the inside of the chamber to perform the dehydrogenation process on the amorphous silicon layer, and forming a polysilicon layer by crystallizing the amorphous silicon layer using a laser..
Lg Display Co., Ltd.

new patent

Thermal pads between stacked semiconductor dies and associated systems and methods

Systems and methods are described for improved heat dissipation of the stacked semiconductor dies by including metallic thermal pads between the dies in the stack. In one embodiment, the thermal pads may be in direct contact with the semiconductor dies.
Micron Technology, Inc.

new patent

Wafer laminate and making method

A wafer laminate has an adhesive layer (2) sandwiched between a support (1) and a wafer (3), with a circuit-forming surface of the wafer facing the adhesive layer. The adhesive layer (2) includes a light-shielding resin layer (2a), an epoxy-containing siloxane skeleton resin layer (2b), and a non-silicone thermoplastic resin layer (2c)..
Shin-etsu Chemical Co., Ltd.

new patent

Integrated circuit structure having deep trench capacitor and through-silicon via and forming same

One aspect of the disclosure relates to an interposer. The interposer may include: a first dielectric layer extending from a substrate in a direction away from a front side of the substrate; a back-end-of-the-line (beol) region extending from the substrate in a direction away from the back side of the substrate; a deep trench (dt) capacitor within the substrate and extending toward a back side of the substrate, the dt capacitor having a first portion within the substrate and a second portion within the first dielectric layer; and a through silicon via (tsv) adjacent to the dt capacitor and extending through the first dielectric layer, the substrate, and the beol region..
Globalfoundries Inc.

new patent

Semiconductor device and producing the same

Provided is a semiconductor device capable of measuring a depth of removal of a silicon carbide (sic) wafer with high accuracy through simple steps, and a method for producing the semiconductor device. The semiconductor device according to an aspect of the present invention includes at least one evaluation element disposed on a sic wafer.
Mitsubishi Electric Corporation

new patent

Integrated circuit structure having deep trench capacitor and through-silicon via and forming same

One aspect of the disclosure relates to a method of forming an integrated circuit structure. The method may include: providing a substrate having a front side and a back side, the substrate including: a deep trench (dt) capacitor within the substrate extending toward the back side of substrate, and a through silicon via (tsv) adjacent to the dt capacitor within the substrate extending toward the back side of the substrate, the tsv including a metal substantially surrounded by a liner layer and an insulating layer substantially surrounding the liner layer; etching the back side of the substrate to expose the tsv on the back side of the substrate; and forming a first dielectric layer covering the exposed tsv on the back side of the substrate and extending away from the front side of the substrate..
Globalfoundries Inc.

new patent

Method for producing self-aligned line end vias and related device

A method for producing self-aligned line end vias and the resulting device are provided. Embodiments include trench lines formed in a dielectric layer; each trench line including a pair of self aligned line end vias; and a high-density plasma (hdp) oxide, silicon carbide (sic) or silicon carbon nitride (sicnh) formed between each pair of self aligned line end vias, wherein the trench lines and self aligned line end vias are filled with a metal liner and metal..
Globalfoundries Inc.

new patent

Methods of forming one or more covered voids in a semiconductor substrate, methods of forming field effect transistors, methods of forming semiconductor-on-insulator substrates, methods of forming a span comprising silicon dioxide, methods of cooling semiconductor devices, methods of forming electromagnetic radiation emitters and conduits, methods of forming imager systems, methods of forming nanofluidic channels, fluorimetry methods, and integrated circuitry

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials.
Micron Technology, Inc.

new patent

Methods of forming one or more covered voids in a semiconductor substrate, methods of forming field effect transistors, methods of forming semiconductor-on-insulator substrates, methods of forming a span comprising silicon dioxide, methods of cooling semiconductor devices, methods of forming electromagnetic radiation emitters and conduits, methods of forming imager systems, methods of forming nanofluidic channels, fluorimetry methods, and integrated circuitry

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials.
Micron Technology, Inc.

new patent

Fluorine contamination control in semiconductor manufacturing process

A method of forming a semiconductor device includes forming a fin over a substrate, forming a polysilicon gate structure over the fin, and replacing the polysilicon gate structure with a metal gate structure. Replacing of the polysilicon gate structure includes depositing a work function metal layer over the fin, performing a sublimation process on a non-fluorine based metal precursor to produce a gaseous non-fluorine based metal precursor, and depositing a substantially fluorine-free metal layer over the work function metal layer based on the gaseous non-fluorine based metal precursor.
Taiwan Semiconductor Manufacturing Co., Ltd.

new patent

A epitaxial growth of a material interface between group iii-v materials and silicon wafers providing counterbalancing of residual strains

The present invention relates to a method of manufacturing semiconductor materials comprising interface layers of group iii-v materials in combination with si substrates. Especially the present invention is related to a method of manufacturing semiconductor materials comprising gaas in combination with si(111) substrates, wherein residual strain due to different thermal expansion coefficient of respective materials is counteracted by introducing added layer(s) compensating the residual strain..
Integrated Solar

new patent

System and verifying the deterministic starting state of a digital device

A system configured to perform a digital simulation of a hardware device, where the hardware device has a digital state component. The system creates an instance of a first module inside a target module associated with the state component, where the source code of the target module remains unmodified by the instance.
Oracle International Corporation

new patent

Toner for developing electrostatic charge image and preparing the same

A toner for developing an electrostatic charge image, the toner including: elemental iron, wherein a content of the elemental iron is in a range of 1.0×103 to 1.0×104 ppm, based on a total weight of the toner; elemental silicon, wherein a content of the elemental silicon is in a range of 1.0×103 to 5.0×103 ppm, based on a total weight of the toner; elemental sulfur, wherein a content of the elemental sulfur is in a range of 500 to 3,000 ppm, based on a total weight of the toner; optionally elemental fluorine, wherein a content of the elemental fluorine, if present, is in a range of 1.0×103 to 1.0×104 ppm; and a binder resin. .
Samsung Electronics Co., Ltd.

new patent

Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank including actinic ray-sensitive or radiation-sensitive film, pattern forming method, and manufacturing electronic device

Provided are an actinic ray-sensitive or radiation-sensitive resin composition including a compound (a) whose dissolution rate in an alkali developer decreases by the action of an acid, a resin (b) having a group that decomposes by the action of an alkali developer to increase the solubility in the alkali developer and having at least one of a fluorine atom or a silicon atom, and a resin (c) having a phenolic hydroxyl group, different from the resin (b), an actinic ray-sensitive or radiation-sensitive film and a mask blank, each formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.. .
Fujifilm Corporation

new patent

Optical communication modules

An optical assembly may include a platform disposed within a housing that has a limited space. The platform may be tilted by a first angle to fit a fiber array into the limited space of the housing.
Finisar Corporation

new patent

Integrated multistage taper coupler for waveguide to fiber coupling

A waveguide coupler has a compression region and an expansion region for coupling light between a silicon waveguide and an optical fiber. The compression region receives light from the silicon waveguide and compresses an optical mode of the light.
Skorpios Technologies, Inc.

new patent

Waveguide mode expander having an amorphous-silicon shoulder

A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder and a ridge.
Skorpios Technologies, Inc.

new patent

Integrated micro-lens waveguide and methods of making and using same

A probe structure includes a monolithically integrated waveguide and lens. The probe is based on su-8 as a guiding material.
The Trustees Of Columbia University In The City Of New York

new patent

Method for manufacturing fz silicon single crystal for solar cell and solar cell

The present invention is a method for manufacturing an fz silicon single crystal for a solar cell, including the steps of: pulling a cz silicon single crystal doped with gallium by a czochralski method; and float-zone processing a raw material rod, with the raw material rod being the cz silicon single crystal, at 1.6 atmospheric pressure or more to manufacture the fz silicon single crystal. As a result, it is possible to provide a method for manufacturing an fz silicon single crystal for a solar cell that can decrease the amount of gallium dopant evaporated during the float-zone processing, thereby preventing the silicon single crystal from increasing the resistance while decreasing oxygen, which is inevitably introduced into a cz crystal, and preventing formation of a b-o pair, which causes a problem to the characteristics of a solar cell..
Shin-etsu Chemical Co., Ltd.

new patent

Copper containing rail steel

Steel railroad rails including carbon, manganese, silicon and greater than 0.45 wt % to 1 wt % copper are provided having greater hardness and yield strength than standard steel rails containing less than 0.45 wt % copper. As an example, the ultimate tensile strength of the steel rails is from 1170 mpa to 1725 mpa.
Cf&i Steel L.p., D/b/a Evraz Rocky Mountain Steel

new patent

Nickel-base alloy and articles

An alloy is disclosed comprising up to 0.05 weight percent carbon, 27.0 to 31.0 weight percent chromium, up to 0.5 weight percent copper, 7.0 to 11.0 weight percent iron, up to 0.5 weight percent manganese, up to 0.015 weight percent sulfur, up to 0.5 weight percent silicon, at least 58 weight percent nickel, and incidental impurities, wherein the alloy exhibits an astm grain size of 3.0 to 9.0, exhibits a uniform grain size distribution, includes intergranular m23c6 carbide precipitates uniformly distributed on grain boundaries, and includes minimal or no intragranular m23c6 carbide precipitates. Articles of manufacture including the alloy also are described..
Ati Properties Llc

new patent

Biochip

A biochip; a liquid which has a different specific gravity from that of the reaction mixture and is immiscible with the reaction mixture; and an additive containing, as a principal component, a carbinol-modified silicone resin, a carboxyl-modified silicone resin, an amino-modified silicone resin, a polyether-modified silicone resin, a silanol-modified silicone resin, or a fluoro-modified silicone resin, wherein the vessel comprising, a flow channel that is capable of flowing a liquid droplet of a reaction mixture containing a surfactant in the longitudinal direction of the vessel.. .
Seiko Epson Corporation

new patent

Laundry treatment particles including silicone

A composition including: a plurality of first particles including: (i) about 30% to about 95% by weight of the first particles a water soluble first carrier, wherein the first particles have a first particles onset of melt from about 25° c. To about 120° c.; and perfume; and (ii) a plurality of second particles including: about 30% to about 95% by weight of the second particles a water soluble second carrier, wherein the second particles have a second particles onset of melt from about 25° c.
The Procter & Gamble Company

new patent

Thermally conductive interface composition and use thereof

A thermally conductive interface composition is interposed between a heat generating component and a heat dissipating component. To meet escalated heat dissipation for performance demanding devices, a thermally conductive interface composition comprises (a) a linear alkenyl organopolysiloxane containing a silicon-bonded alkenyl-terminated group or groups, (b) a branched alkenyl organopolysiloxane containing at least two silicon-bonded alkenyl groups, (c) thermally conductive fillers in a ternary particle size mixture, (d) an organohydrogenpolysiloxane containing at least two si—h terminated groups, (e) an addition reaction catalyst, (f) a hydroxy group-containing siloxane, (g) alkoxy group-containing siloxanes..

new patent

Light blocking adhesive

An adhesive including a copolymer that includes repeating units of a first monomer and a second monomer, wherein: the first monomer includes a (meth)acrylate-based monomer, a silicon-based monomer, or an urethane-based monomer, the second monomer includes a light absorbing group, and the light absorbing group is an azo-based dye.. .
Samsung Display Co., Ltd.

new patent

Adhesive composition, adhesive film formed from same, and display member comprising same

Disclosed herein is an adhesive film which includes: a monomer mixture including a hydroxyl group-containing (meth)acrylate and a comonomer; and nanoparticles, wherein the nanoparticles include a silicone polymer and have an average particle diameter of about 5 nm to about 800 nm.. .
Samsung Electronics Co., Ltd.

new patent

Coating material and producing the same

The present invention provides a coating material that allows a structure with void spaces having a strength and flexibility to be formed. The coating material of the present invention includes: pulverized products of a gelled silicon compound obtained from a silicon compound containing at least three or less functional groups having saturated bonds; and a dispersion medium, wherein the pulverized product contains a residual silanol group.
Nitto Denko Corporation

new patent

Coating agent composition

A coating agent composition of the present invention has excellent water repellency and water sliding property, as well as favorable application workability, wear resistance, and storage stability. The coating agent composition is particularly useful in forming a thin coating layer for imparting water repellency, water sliding property, gloss, durability, and antifouling properties to a metal surface, a painted surface, or a resin surface of automotive bodies and railroad vehicles, and other similar objects.
Threebond Co., Ltd.

new patent

A composition for impregnating materials to shield against the effects of alternating electromagnetic fields, its application in coating/impregnating fibrous and/or porous matrices and materials containing the same

The object of the invention is a composition for impregnating other materials, rendering them able to shield alternating electromagnetic fields in the range from low frequencies up to radio frequencies, containing an aqueous solution of salt that may form hydrates or a combination of salts, of which at least one forms a hydrate, characterised in that it contains an acrylic and/or styrene-acrylic dispersion and/or silicone emulsion and/or enhancing additives selected from a group containing surfactants and/or aluminosilicates and silicates and/or soluble and insoluble calcium compounds, metal and metalloid oxides, while an alternating field is shielded at least in range from 10−2 hz to 106 hz and its application for coating/impregnating fibrous and/or porous matrix and materials containing the thereof.. .
Selena Labs Sp. Z O.o.

new patent

Organic silicone resin composition and pre-preg, laminate, copper-clad laminate, and aluminum substrate that use the composition

The present invention relates to an organic silicone resin composition and a prepreg, a laminate, and an aluminum substrate that use the composition. The organic silicone resin composition comprises in terms of parts by weight: 100 parts of a condensation-type silicone resin, 0.0001-2 parts of a catalyst, and 0.001-10 parts of an additive.
Shengyi Technology Co., Ltd.

new patent

Dry adhesive with a selective adhesitivity

A selective adhesive mechanism comprises an engineered surface structure or substrate and a compliant member. The compliant member is able to be a dry and non-tacky substance.
Carey & Co.

new patent

Silicone rubber composition for making key pad and key pad

(f) an effective amount of a curing agent.. .

new patent

Polyolefin resin foam particles and production same

An expanded polyolefin resin particle is obtained by expanding a polyolefin resin particle using water and/or an inorganic gas as a foaming agent. The polyolefin resin particle includes a polyolefin resin, a product obtained by heating and kneading a mixture, and a water absorbing substance, wherein the mixture includes a first polypropylene resin, a polypropylene wax, a polyorganosiloxane including at least one silicon-atom-bound radical polymerizable functional group per molecule, and an organic peroxide..
Kaneka Corporation

new patent

Method for producing organopolysiloxanes

Highly condensed silicon resins are obtained by a three step continuous procedure without the use of organic solvent, by preliminarily forming a partial alkoxylate by reacting a chlorosilane with alcohol containing no or a minimal amount of water, feeding the partial alkoxylate to a reaction column to form a silicone resin of low degree of condensation, and further condensing the silicone resin intermediate thus formed to produce a silicone resin product.. .
Wacker Chemie Ag

new patent

Organosilicon compound containing isocyanate group, process for producing same, adhesive, pressure-sensitive adhesive, and coating material

The purpose of the present invention is to obtain an organosilicon compound containing an isocyanate group by thiol-ene addition reaction from a corresponding organosilicon compound having a mercapto group and an isocyanate compound having a polymerizable group. Provided is a silane coupling agent which includes a specific linking structure in which a sulfur atom is indispensably contained in a linking chain which connects an isocyanate group to a hydrolyzable silyl group.
Shin-etsu Chemical Co., Ltd.

new patent

Road and surface coating compositions and processes thereof

Provided are compositions and methods thereof that may include portland cement, a melamine, and alumina. The compositions may further include silicon dioxide, supplementary cementitious material, polymer resin(s), hydrophobizers, preservatives, film-forming assistants, dispersants, foam stabilizers, defoamers, pigments, dyes, water, or combinations thereof.
Epave, Llc

new patent

Reactor for the deposition of polycrystalline silicon

Reflective silver coatings on the inside surfaces of a siemens reactor for polycrystalline silicon production are improved by a cold forming after-treatment of the silver coating.. .
Wacker Chemie Ag

new patent

Automobiles weather strip structure and manufacturing method

A method for manufacturing an automobile weather strip comprises: (a) weather strip manufacturing step wherein the seam material and a thermoplastic elastomer are extruded and molded; (b) pretreatment step wherein the surface of the weather strip manufactured is pretreated; (c) slip agent applying step wherein a slip agent made by mixing silicone and polyurethane is applied to the surface of the weather strip pretreated through the pretreatment step; and (d) curing step wherein the slip agent coating layer formed through the slip agent applying step is cured.. .
Dmc, Inc

new patent

Coated solder wire and manufacturing same

Provided is a manufacturing method in which a coated solder wire having a dense polysiloxane coating film that is uniformly provided over the entire surface of the solder wire can be efficiently obtained in a single process. A coated solder wire is obtained by a manufacturing method that includes; a radicalization step for forming a radicalized organic silicon compound by mixing a reaction gas that has been plasmatized under atmospheric pressure and an organic silicon compound that is introduced by way of a carrier gas, and radicalizing that organic silicon compound; a reaction area formation step for forming a reaction area that is defined by a helical gas flow and in which the radicalized organic silicon compound is uniformly dispersed; and a coating step for forming a 4 nm to 200 nm thick polysiloxane coating film on the surface of a solder wire by transporting a solder wire inside the reaction area and causing the radicalized organic silicon compound to react with metal on the surface of that solder wire..
Sumitomo Metal Mining Co., Ltd.

new patent

Activation of supported olefin metathesis catalysts by organic reductants

An organic reductant, in particular an organo silicon reductant suitable for activating supported catalysts of the type monem, wherein e is s and/or se, in particular mon, wherein m is w, mo or re, is described as well as its use in metathesis reactions. The reduced catalysts are able to metathesize olefins at low temperatures and are therefore also suitable for metathesis of functionalized olefins..
Osaka University

new patent

Novel zeolite

An object of the present invention is to provide an afx zeolite having a novel structure. An afx zeolite having a lattice spacing d of a (004) plane being not less than 4.84 Å and not greater than 5.00 Å, and a molar ratio of silica to alumina being not less than 10 and not higher than 32.
Tosoh Corporation

new patent

Filters comprising oxygen-depleted sic membranes

A filter for the filtration of a fluid, such as a liquid, includes or composed of a support element made of a porous ceramic material, the element having a tubular or parallelepipedal shape delimited by an external surface and including, in its internal portion, a set of adjacent channels with axes parallel to one another and separated from one another by walls of the porous inorganic material, wherein at least a portion of the channels and/or at least a portion of the external surface are covered with a porous separating membrane layer, wherein the layer is made of a material essentially composed of sintered grains of silicon carbide (sic), and the weight content of elemental oxygen of the layer is less than 0.5%.. .
Ecole Nationale Superieure De Chimie De Montpellier

new patent

Filters comprising sic membranes incorporating nitrogen

A filter for the filtration of a fluid, such as a liquid, includes or is composed of a support element made of a porous ceramic material, the element exhibiting a tubular or parallelepipedal shape delimited by an external surface and including, in its internal portion, a set of adjacent channels with axes parallel to one another and separated from one another by walls of the porous inorganic material, in which at least a portion of the channels and/or at least a portion of the external surface are covered with a porous separating membrane layer, wherein the separating membrane layer is made of a material essentially composed of silicon carbide (sic), and the content by weight of elemental nitrogen of the layer constituting the porous separating membrane layer is between 0.1% and 2%.. .
Saint-gobain Centre De Recherches Et D'etudes Europeen

new patent

Clear cleansing composition containing aesthetic modifiers

The present invention is directed to a cleansing composition containing: (a) at least one anionic surfactant; (b) at least one amphoteric surfactant; (c) at least one amphoteric polymer; (d) at least one acrylate copolymer; (e) at least one silicone; (f) at least one alcohol ester; and (g) an insoluble component, and wherein the composition is preferably clear in appearance, free of cationic polymer, and has the insoluble component effectively suspended therein.. .
L'oreal

new patent

Hair darkening dye composition

A hair darkening dye composition, comprises: 2-98 parts by weight of hair dye; 1-99 parts by weight of darkening agent; 2-98 parts by weight of crosslinking agent; 2-98 parts by weight of emulsifier; 2-98 parts by weight of dyeing auxiliaries; and 0.1-40 parts by weight of ph regulator. The darkening agent is selected from one or more of chitin, chitosan, gelatin, silicon oil and resin.
Jilin Hengtai Garment Washing And Dyeing Science And Technology Institute

new patent

Non-sticky stable composition

The present invention relates to a composition comprising: (a) at least one oil; (b) at least one polyglyceryl fatty acid ester; (c) at least one silicone elastomer; and (d) at least one polysaccharide. The composition according to the present invention provides no sticky feeling or a reduced sticky feeling to the touch, and is stable, in particular stable over time and/or under elevated temperature, although the composition includes a polyglyceryl fatty acid ester..
L'oreal

new patent

Dye composition comprising a para-phenylenediamine oxidation base, a polysaccharide thickener in a medium rich in fatty substances

The present invention relates to a composition for dyeing keratin fibres, in particular keratin fibres such as the hair, comprising: a) at least one oxidation base 3-(2,5-diaminophenyl)-1-propanol and/or acid salts thereof or solvates thereof such as hydrates; b) at least one coupler; c) at least 10% by weight relative to the total weight of the composition of a fatty substance which is preferably liquid and non-silicone-based; d) at least one saccharide thickening polymerp; e) optionally at least one basifying agent; and f) optionally at least one chemical oxidizing agent. The invention also relates to a process for dyeing keratin fibres such as the hair using the composition of the invention, and to a multi-compartment device for using the composition of the invention..
L'oreal

new patent

Intraocular drainage device

An intraocular drainage device may include a monolithic silicone body having a flap, a rigid bottom plate having a portion configured to contact a corresponding portion of the flap, and a tube having a proximal end disposed between the flap and the rigid bottom plate. The corresponding portion of the flap may be configured to separate from the portion of the rigid bottom plate responsive to a fluid pressure in aqueous humor received from the tube.
New World Medical, Inc.

new patent

Adjustable breast implant with integral injection port

A breast implant comprising an outer shell that may be filled with saline or a double shell comprising two chambers, wherein the outer shell may be filled with silicone gel and the inner shell may be filled with saline. Alternatively, the single lumen saline chamber may contain several bubble shells disposed within the lumen to baffle the saline, giving the implant a more gel-like feel.
Techno Investments, Llc

new patent

Safety cushion for bathtub

A safety cushion that can be easily attached to and flush mounted on a surface of a bathtub and/or bathtub rim is disclosed. The safety cushion includes an elongated body fabricated from a pliable material such as rubber, silicone or polyurethane, and is provided with a plurality of substantially concave openings extending partially through a thickness of the body from a bottom surface towards a top surface.

new patent

Hookah holder

Provided is a hookah holder comprising: a) a ring configured for accepting a base of a hookah; b) a plurality of connectors on a bottom of the ring for securing the ring to a surface; wherein the hookah's base in placed inside of the ring and is secured by the hookah holder. The connector can be a suction cup.
Bilikian-attie Inc., Dba, Golden Desert

Built-in self test for loopback on communication system on chip

In an example, the present invention includes an integrated system-on-chip device. The device is configured on a single silicon substrate member.
Inphi Corporation

Ldmos transistors and associated systems and methods

A lateral double-diffused metal-oxide-semiconductor field effect (ldmos) transistor includes a silicon semiconductor structure, a dielectric layer at least partially disposed in a trench of the silicon semiconductor structure in a thickness direction, and a gate conductor embedded in the dielectric layer and extending into the trench in the thickness direction. The dielectric layer and the gate conductor are at least substantially symmetric with respect to a center axis of the trench extending in the thickness direction, as seen when the ldmos transistor is viewed cross-sectionally in a direction orthogonal to the lateral and thickness directions..
Maxim Integrated Products, Inc.

Ldmos transistors and associated systems and methods

A lateral double-diffused metal-oxide-semiconductor field effect transistor includes a silicon semiconductor structure, first and second gate structures, and a trench dielectric layer. The first and second gate structures are disposed on the silicon semiconductor structure and separated from each other in a lateral direction.
Maxim Integrated Products, Inc.

Aluminum alloy for diecasting having improved thermal conductivity and castability, heat sink for battery using aluminum alloy for diecasting and manufacturing method thereof

The present invention relates to an aluminum alloy for diecasting having improved thermal conductivity and castability. Provided herein is an aluminum alloy for diecasting having improved thermal conductivity and castability by forming an aluminum alloy containing about 10.0 wt % to about 12.0 wt % of silicon (si), about 0.5 wt % to about 0.8 wt % of iron (fe), about 0.3 wt % or less of impurities, and remainder of aluminum (al), a heat sink for a battery manufactured using the aluminum alloy for diecasting, and a manufacturing method thereof..
Kia Motors Corporation

Microbattery with through-silicon via electrodes

Batteries and methods of forming the same include an anode structure, a cathode structure, and a conductive overcoat. The anode structure includes an anode substrate, an anode formed on the anode substrate, and an anode conductive liner that is in contact with the anode.
International Business Machines Corporation

Electric device

In an electric device the negative electrode active material layer includes a silicide phase containing a silicide of a transition metal is dispersed in a parent phase containing amorphous or low crystalline silicon as a main component, a predetermined composition, and a ratio value (b/a) of a diffraction peak intensity b of a silicide of a transition metal in a range of 2θ=37 to 45° to a diffraction peak intensity a of a (111) plane of si in a range of 2θ=24 to 33° in a predetermined range in an x-ray diffraction measurement using a cukα1 ray is used as a si-containing alloy. A solid solution or an oxide-coated solid solution in which a coating layer containing an oxide in a predetermined amount is formed on the particle surface of the solid solution and is used in the positive electrode active material layer..
Nissan Motor Co., Ltd.

Negative electrode active material and preparing the same

A negative electrode active material includes a silicon-based alloy represented by si-m1-m2-c—b, wherein m1 and m2 are different from each other and are each independently selected from magnesium, aluminum, titanium, vanadium, chromium, iron, cobalt, nickel, copper, zinc, gallium, germanium, manganese, yttrium, zirconium, niobium, molybdenum, silver, tin, tantalum, and tungsten. In the silicon-based alloy, si is in a range of about 50 at % to about 90 at %, m1 is in a range of about 10 at % to about 50 atom %, and m2 is in a range of 0 at % to about 10 at %, based on a total number of si, m1, and m2 atoms.
Industry-academia Cooperation Group Of Sejong University

Negative electrode active material and battery

A negative electrode active material includes a carbon material including boron and a silicon material including at least one selected from silicon and silicon oxide. The silicon material does not include boron.
Panasonic Intellectual Property Management Co., Ltd.

Electrodes for metal-ion batteries

An electrode for a metal-ion battery is provided wherein the active layer of the electrode comprises a plurality of porous particles comprising an electroactive material selected from silicon, germanium, tin, aluminium and mixtures thereof and a plurality of carbon particles selected from one or more of graphite, soft carbon and hard carbon. The ratio of the d50 particles size of the carbon particles to the d50 particle diameter of the porous particles is in the range of from 1.5 to 30.
Nexeon Limited

Powder, electrode and battery comprising such a powder

Powder comprising particles comprising a matrix material and silicon-based domains dispersed in this matrix material, whereby either part of the silicon-based domains are present in the form of agglomerates of silicon-based domains whereby at least 98% of these agglomerates have a maximum size of 3 μm or less, or the silicon-based domains are not at all agglomerated into agglomerates.. .
Umicore

Negative electrode active material for non-aqueous electrolyte secondary batteries, and non-aqueous electrolyte secondary battery

The initial charge/discharge efficiency and cycle characteristics of a non-aqueous electrolyte secondary battery that contains a silicon material as a negative-electrode active material are improved. A negative-electrode active material particle (10) according to an embodiment includes a lithium silicate phase (11) represented by li2zsio(2+z) {0<z<2} and silicon particles (12) dispersed in the lithium silicate phase (11).
Sanyo Electric Co., Ltd.

Method of manufacturing magnetoresistive device and magnetoresistive device manufacturing system

A method of manufacturing a magnetoresistive device according to an embodiment includes: forming an underlying film including silicon, oxygen, and carbon, on a substrate; performing plasma ashing on the underlying film by using plasma of an oxygen-containing gas; forming a multilayer film including a metal layer and a magnetic layer, on the underlying film subjected to ashing; and performing plasma etching on the multilayer film by using plasma of a hydrogen-containing gas.. .
Tokyo Electron Limited

Integrated circuits with magnetic tunnel junctions and methods for producing the same

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction with a fixed layer, a total free structure, and a barrier layer between the fixed layer and the total free structure.
Globalfoundries Singapore Pte. Ltd.

Piezoelectric vibration component and application method

A piezoelectric vibration component that includes a piezoelectric vibrator, a substrate, and a conductive adhesive that bonds the piezoelectric vibrator to the substrate. The conductive adhesive contains a silicone-based base resin, a cross-linker, a conductive filler, and an insulating filler.
Murata Manufacturing Co., Ltd.

Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit

A method for increasing the integration level of superconducting electronic circuits, comprising fabricating a series of planarized electrically conductive layers patterned into wiring, separated by planarized insulating layers, with vias communicating between the conductive layers. Contrary to the standard sequence of patterning from the bottom up, the pattern of vias in at least one insulating layer is formed prior to the pattern of wiring in the underlying conductive layer.
Hypres, Inc.

Sensor device

The purpose of the present invention is to provide a highly accurate and highly reliable physical quantity sensor wherein an error due to stress applied to a sensor element of the physical quantity sensor is reduced. This physical quantity sensor device is provided with: a hollow section formed in a si substrate; an insulating film covering the hollow section; and a heating section formed in the insulating film.
Hitachi Automotive Systems, Ltd.

Light emitting device

A light emitting device includes a light emitting element having a peak emission wavelength of 410 nm to 440nm and a phosphor member. The phosphor member includes a first phosphor having a peak emission wavelength of 430 nm to 500 nm and containing an alkaline-earth phosphate, a second phosphor having a peak emission wavelength of 440 nm to 550 nm and containing at least one of an alkaline-earth aluminate and a silicate containing ca, mg, and cl, a third phosphor having a peak emission wavelength of 500 nm to 600 nm and containing a rare-earth aluminate, a fourth phosphor having a peak emission wavelength of 610 nm to 650 nm and containing a silicon nitride containing al and at least one of sr and ca, and a fifth phosphor having a peak emission wavelength of 650 nm to 670 nm and containing a fluorogermanate..
Nichia Corporation

Process for the manufacture of solar cells

The present invention relates to a method for manufacturing a solar cell from a silicon wafer comprising a step of etching the silicon wafer with specific gas mixtures comprising fluorine, hydrogen fluoride, one or more inert gases and optionally one or more a further gases, to silicon wafers produced using said method as well as to the use of said gas mixtures.. .
Solvay Sa

High speed photosensitive devices and associated methods

High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation.
Sionyx, Llc

Method for forming semiconductor structure

A method for manufacturing a semiconductor structure includes the following steps. First, a semiconductor substrate including a first semiconductor material is provided.
United Microelectronics Corp.

Method to form strained channel in thin box soi structures by elastic strain relaxation of the substrate

Methods and structures for forming strained-channel fets are described. A strain-inducing layer may be formed under stress in a silicon-on-insulator substrate below the insulator.
Stmicroelectronics, Inc.

Method for producing semiconductor device

A method for producing a semiconductor device includes depositing an oxide film containing an impurity having a first conductivity type on a substrate. A nitride film and an oxide film containing an impurity having a second conductivity type different from the first conductivity type are deposited.
Unisantis Electronics Singapore Pte. Ltd.

Semiconductor device, manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

A semiconductor device according to an embodiment includes a silicon carbide layer, a silicon oxide layer including carbon, the silicon oxide layer including single bonds between carbon atoms which are at least a part of the carbon, the number of the single bonds between carbon atoms being greater than the number of double bonds between carbon atoms which are at least a part of the carbon, and a region provided between the silicon carbide layer and the silicon oxide layer, the region including at least one element from the group consisting of nitrogen (n), phosphorus (p), arsenic (as), antimony (sb), bismuth (bi), scandium (sc), yttrium (y), and lanthanoids (la, ce, pr, nd, pm, sm, eu, gd, tb, dy, ho, er, tm, yb, and lu).. .
Kabushiki Kaisha Toshiba

Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods

Semiconductor devices include a silicon carbide drift region having an upper portion and a lower portion. A first contact is on the upper portion of the drift region and a second contact is on the lower portion of the drift region.
Cree, Inc.

Avalanche-rugged silicon carbide (sic) power device

In at least one general aspect, a silicon carbide (sic) device can include a drift region and a termination region at least partially surrounding the sic device. The termination region can have a first transition zone and a second transition zone.
Fairchild Semiconductor Corporation

Imaging device and manufacturing the same

A groove-type through hole passing through a silicon layer and a first interlayer insulating film is formed in a region around a chip formation region including a photodiode. In the groove-type through hole, a wall-like wall-type conductive pass-through portion corresponding to the groove-type through hole is formed.
Renesas Electronics Corporation

Graded-semiconductor image sensor

An image sensor includes a semiconductor material having an illuminated surface and a non-illuminated surface. A plurality of photodiodes is disposed in the semiconductor material to receive image light through the illuminated surface.
Omnivision Technologies, Inc.

Soi memory device

A method of manufacturing a semiconductor device is provided including providing a silicon-on-insulator substrate comprising a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate and a semiconductor layer formed on the buried oxide layer, and forming a memory device on the soi substrate including forming a floating gate from a part of the semiconductor layer, forming an insulating layer on the floating gate, and forming a control gate on the insulating layer.. .
Globalfoundries Inc.

Nvm memory hkmg integration technology

The present disclosure relates to an integrated circuit (ic) that includes a hkmg hybrid non-volatile memory (nvm) device and that provides small scale and high performance, and a method of formation. In some embodiments, the integrated circuit includes a memory region having a nvm device with a pair of control gate electrodes separated from a substrate by corresponding floating gates.
Taiwan Semiconductor Manufacturing Co., Ltd.

Methods of fabricating semiconductor devices

A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.. .
Samsung Electronics Co., Ltd.

Semiconductor device having gate structure with reduced threshold voltage and manufacturing the same

A semiconductor device is provided, including: a substrate having a first area and a second area; several first gate structures formed at the first area, and at least one of the first gate structures including a first hardmask on a first gate, and the first gate structure having a first gate length; several second gate structures formed at the second area, and at least one of the second gate structures including a second hardmask on a second gate, and the second gate structure having a second gate length. The first gate length is smaller than the second gate length, and the first hardmask contains at least a portion of nitrogen (n2)-based silicon nitride (sin) which is free of oh concentration..
United Microelectronics Corp.

Semiconductor device and fabrication the same

The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer..
Pannova Semic

Exposed solderable heat spreader for flipchip packages

A flipchip may include: a silicon die having a circuit side with solder bumps and a non-circuit side; a leadframe attached to the solder bumps on the circuit side of the silicon die; a heat spreader attached to the non-circuit side of the silicon die; and encapsulation material encapsulating the silicon die, a portion of the leadframe, and all but one exterior surface of the heat spreader. The leadframe may have nipdau plating on the portion that is not encapsulated by the encapsulation material and no plating on the portion that is attached to the solder bumps..
Linear Technology Corporation

Advanced through substrate via metallization in three dimensional semiconductor integration

An advanced through silicon via structure for is described. The device includes a substrate including integrated circuit devices.
International Business Machines Corporation

High-k metal gate device and manufaturing method thereof

A high-k metal gate device and manufacturing method thereof are provided in the present invention. The method uses a silicon material layer as a battier layer for the lower silicon nitride layer in the nmos region and then performs an annealing process to turn the silicon material layer into a tisin interlayer of the pmos region and a tisin layer of the nmos region, respectively.
Shanghai Huali Microelectronics Corporation

High-k metal gate device and manufaturing method thereof

A high-k metal gate device and manufacturing method thereof are provided in the present invention. The method uses a silicon material layer as a battier layer for the lower silicon nitride layer in the nmos region and then performs an annealing process to turn the silicon material layer into a tisin interlayer of the pmos region and a tisin layer of the nmos region, respectively.
Shanghai Huali Microelectronics Corporation

Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packages

A semiconductor chip including through silicon vias (tsvs), wherein the tsvs may be prevented from bending and the method of fabricating the semiconductor chip may be simplified, and a method of fabricating the semiconductor chip. The semiconductor chip includes a silicon substrate having a first surface and a second surface; a plurality of tsvs which penetrate the silicon substrate and protrude above the second surface of the silicon substrate; a polymer pattern layer which is formed on the second surface of the silicon substrate, surrounds side surfaces of the protruding portion of each of the tsvs, and comprises a flat first portion and a second portion protruding above the first portion; and a plated pad which is formed on the polymer pattern layer and covers a portion of each of the tsvs exposed from the polymer pattern layer..
Samsung Electronics Co., Ltd.

Method of selective silicon nitride etching

Embodiments of the invention provide a substrate processing method for selective sin etching relative to other layers used in semiconductor manufacturing. According to one embodiment, the substrate processing method includes providing in a plasma processing chamber a substrate containing a first material containing silicon nitride and a second material that is different from the first material, forming a plasma-excited process gas containing nf3 and o2, and exposing the substrate to the plasma-excited process gas to selectively etch the first material relative to the second material.
Tokyo Electron Limited

Method of selective silicon oxide etching

Embodiments of the invention provide a substrate processing method for selective sio2 etching relative to other layers used in semiconductor manufacturing. The method includes providing a substrate containing a first layer containing sio2 and a second layer that is different from the first layer, forming a plasma-excited process gas containing 1) nf3 and nh3, 2) nf3, n2 and h2, or 3) nf3, nh3, n2 and h2, and exposing the substrate to the plasma-excited process gas to selectively etch the first layer relative to the second layer.
Tokyo Electron Limited

Method of silicon extraction using a hydrogen plasma

A method of silicon extraction using a hydrogen plasma has been disclosed in various embodiments. The substrate processing method includes providing a substrate containing a first material consisting of silicon and a second material that is different from the first material, forming a plasma-excited process gas containing h2 and optionally ar, and exposing the substrate to the plasma-excited process gas to selectively etch the first material relative to the second material.
Tokyo Electron Limited

Plasma processing method

Disclosed is a plasma processing method for processing a workpiece that includes: a silicon-containing etching target layer, an organic film provided on the etching target layer, an antireflective film provided on the organic layer, and a first mask provided on the antireflective layer, using a plasma processing apparatus having a processing container. The plasma processing method includes: etching the antireflective film using plasma generated in the processing container and the first mask to form a second mask from the antireflective film; etching the organic film using plasma generated in the processing container and the second mask to form a third mask from the organic film; generating plasma of a mixed gas including the first gas and the second gas in the processing container; and etching the etching target layer using plasma generated in the processing container and the third mask..
Tokyo Electron Limited

Method for manufacturing a bonded soi wafer

Method for manufacturing a bonded soi wafer by bonding a bond wafer and base wafer, each composed of a silicon single crystal, via an insulator film, including the steps: depositing a polycrystalline silicon layer on the base wafer bonding surface side, polishing the polycrystalline silicon layer surface, forming the insulator film on the bonding surface of the bond wafer, bonding the polished surface of the base wafer polycrystalline silicon layer and bond wafer via the insulator film; thinning the bonded bond wafer to form an soi layer; wherein, in the step of depositing the polycrystalline silicon layer, a wafer having a chemically etched surface as base wafer; chemically etched surface is subjected to primary polishing followed by depositing the polycrystalline silicon layer on surface subjected to the primary polishing, and in the step polishing the polycrystalline silicon layer surface, which is subjected to secondary polishing or secondary and finish polishing.. .
Shin-etsu Handotai Co., Ltd.

Method for polishing silicon wafer

The present invention is method for polishing silicon wafer, the method including recovering used slurry containing polishing abrasive grains that have been supplied to the silicon wafer and used for polishing, and circulating and supplying the recovered used slurry to the silicon wafer to polish the silicon wafer, wherein mixed alkali solution containing chelating agent and either or both of a ph adjuster and a polishing rate accelerator is added to the recovered used slurry without adding unused polishing abrasive grains, and the recovered used slurry is circulated and supplied to the silicon wafer to polish the silicon wafer. As a result, there is provided a method for polishing a silicon wafer that can suppress the occurrence of metal impurity contamination and stabilize the composition (e.g., the concentration of the chelating agent) of the used slurry when the used slurry is circulated and supplied to the silicon wafer for polishing..
Shin-etsu Handotai Co., Ltd.

Semiconductor device, manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

A semiconductor device according to an embodiment includes a silicon carbide layer, a gate electrode, and a silicon oxide layer disposed between the silicon carbide layer and the gate electrode, a number of single bonds between carbon atoms being larger than that of double bonds between carbon atoms in the silicon oxide layer.. .
National Institute For Materials Science

Substrate processing method

Disclosed is a substrate processing method including gas injection including a source material containing silicon towards substrates received in a reaction chamber, depositing the source material on the substrates by generating plasma including oxygen radicals so as to form deposition films, and executing surface treatment of the deposition films by injecting plasma gas including oxygen radicals.. .
Jusung Engineering Co., Ltd.

Habit bracelet

A habit bracelet fabricated from a flexible material such as silicone or rubber. The bracelet has the a plurality of removable elements such as for example, break-off and/or punch-out elements.

Transparent conductive coating for capacitive touch panel

A multi-layer conductive coating is substantially transparent to visible light, contains at least one conductive layer comprising silver that is sandwiched between at least a pair of dielectric layers, and may be used as an electrode and/or conductive trace in a capacitive touch panel. The multi-layer conductive coating may contain a dielectric layer of or including zirconium oxide (e.g., zro2), silicon nitride, and/or tin oxide in certain embodiments, and may be used in applications such as capacitive touch panels for controlling showers, appliances, vending machines, electronics, electronic devices, and/or the like..
Guardian Glass, Llc

Arcless tap changer using gated semiconductor devices

A voltage regulator includes a tap changer coupled to a voltage source terminal and a voltage load terminal, the voltage regulator also includes a first switch and a first current transformer coupled in series between the voltage load terminal and a first movable contact of the tap changer. The voltage regulator further includes a second switch and a second transformer coupled in series between the voltage load terminal and a second movable contact of the tap changer, a first silicon controlled rectifier and a second silicon controlled rectifier are controlled by a first control circuit and a second control circuit, respectively.
Cooper Technologies Company

Manufacturing liquid crystal display device

A lcd device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode.
Panasonic Liquid Crystal Display Co., Ltd.

Silicon-based optical ports providing passive alignment connectivity

Optical ports providing passive alignment connectivity are disclosed. In one embodiment, an optical port includes a substrate having a surface, a photonic silicon chip, a connector body, and a plurality of spacer elements.
Corning Optical Communications Llc

Method for evaluating abrasive grains, and manufacturing silicon wafer

An evaluation method of abrasive grains used in an ingot-cutting slurry includes: an evaluation solution preparation step in which abrasive grains including polishing grains and impurities are dissolved in a solvent to prepare an evaluation solution; a sedimentation step in which a container containing the evaluation solution is left still to settle the polishing grains; a measurement step in which a turbidity of supernatant of the evaluation solution is measured using the measurement device; and an estimation step in which an amount of the impurities is estimated based on the measurement result of the turbidity of the supernatant.. .
Sumco Corporation

High temperature composites with enhanced matrix

A composite article comprises a substrate, the substrate comprising a silicon containing material and an additive comprising boron nitride nanotubes.. .
United Technologies Corporation

Waterproof sheet and waterproofing construction

A waterproof sheet which comprises a base layer constituted of a silicone rubber and a pressure-sensitive adhesive layer superposed thereon and which is for use in preventing the infiltration of rainwater, etc., characterized in that the pressure-sensitive adhesive layer is constituted of a cured object of an addition reaction type curable silicone composition in which the theoretical amount of crosslinks is 0.005-0.01 mol/g and the ratio of the amount of sih groups to the amount of alkenyl groups, sih/alkenyl, is 0.5-1.1 by mole and which, when cured, has a hardness as measured with a csr-2 type hardness meter of 3-20. This waterproof sheet can be used over a long period without decreasing in physical property, and has waterproofing properties over a long period.
Shin-etsu Chemical Co., Ltd.

Method for heat treatment of silicon single crystal wafer

A method for a heat treatment of a silicon single crystal wafer in an oxidizing ambient, including: performing the heat treatment based on a condition determined by a tripartite correlation between a heat treatment temperature during the heat treatment, an oxygen concentration in the silicon single crystal wafer before the heat treatment, and a growth condition of a silicon single crystal from which the silicon single crystal wafer is cut out. This provides a method for a heat treatment of a silicon single crystal wafer which can annihilate void defects or micro oxide precipitate nuclei in a silicon single crystal wafer with low cost, efficiently, and securely by a heat treatment in an oxidizing ambient..
Shin-etsu Handotai Co., Ltd.

Storage bag for polycrystalline silicon ingot, packing polycrystalline silicon ingot, and producing cz silicon single crystal

In the present invention, as a bag to store polycrystalline silicon ingots, there is used a bag in which the concentration of paraffinic hydrocarbons in a concentrate of solvent-soluble components obtained by soxhlet extraction using acetone as a solvent is lower than 300 ppmw as a value measured by gc-ms method; the concentration of antioxidants, lower than 10 ppmw; the concentration of ultraviolet absorbents, lower than 5 ppmw; and the concentration of antistatic agents and surfactants, lower than 50 ppmw. Then, when the polycrystalline silicon ingots are packed, preferably, the polycrystalline silicon ingots are put in the storage bag; thereafter, the storage bag is sealed; further, the storage bag is put and sealed in a linear low-density polyethylene bag containing an antistatic agent or a surfactant added in the bag material..
Shin-etsu Chemical Co., Ltd.

Method for producing silicon carbide single crystal and silicon carbide single crystal substrate

The present invention provides a method for producing an sic single crystal, enabling obtaining an sic single crystal substrate in which a screw dislocation-reduced region is ensured in a wide range, and an sic single crystal substrate. The sic single crystal substrate is produced using a seed crystal having an off angle in the off orientation from a {0001} plane by a production method wherein in advance of a growth main step of performing crystal growth to form a facet {0001} plane in the crystal peripheral part on the crystal end face having grown thereon the bulk silicon carbide single crystal and obtain more than 50% of the thickness of the obtained sic single crystal, a growth sub-step of growing the crystal at a higher nitrogen concentration than in the growth main step and at a growth atmosphere pressure of 3.9 to 39.9 kpa and a seed crystal temperature of 2,100° c.
Nippon Steel & Sumitomo Metal Corporation

Method for producing crystal

A method for producing a crystal, according to the present invention, where the lower surface 4b of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4b of the seed crystal 4, comprising the steps of bringing the lower surface 4b of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4b of the seed crystal 4 is in contact with the solution 5, in a deceleration step.. .
Kyocera Corporation

Method for forming carbon-containing silicon/metal oxide or nitride film by ald using silicon precursor and hydrocarbon precursor

An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ald conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, —nr2, or —or..
Asm Ip Holding B.v.

Thermal spray composition and component made therewith

Thermal spray coating compositions, methods of using thermal spray coating compositions, and remanufactured components are disclosed herein. A thermal spray coating composition can include about 7% to about 9% by weight aluminum, about 5% to about 7% by weight silicon, about 1% to about 3% by weight manganese, about 1% to about 14% by weight copper, with a remaining balance of iron.
Caterpillar Inc.

Ferritic stainless steel

Provided is a ferritic stainless steel including, as a ferritic stainless steel used in a separator for a fuel cell, a base material including, in weight %, c: 0.003% to 0.012%, n: 0.003% to 0.015%, si: 0.05% to 0.15%, mn: 0.3% to 0.8%, cr: 20% to 24%, mo; 0.1% to 0.4%, nb: 0.1% to 0.7%, ti: 0.03% to 0.1%, and the remainder being fe and inevitable impurities. A first scale layer including chromium oxide is formed on a surface of the base material, and a second scale layer including chromium oxide and manganese oxide is formed on a surface of the first scale layer.
Posco

Single-crystal silicon-carbide substrate and polishing solution

The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.. .
Asahi Glass Company, Limited

Use of magnesium compound for improving water resistance of cured silicone rubber

The present invention relates to a curable silicone rubber composition for various types of water supply components used in contact with water. The present invention also relates to a cured product of this composition, a water resistant cured silicone rubber, and use thereof.
Dow Corning Toray Co., Ltd.

Omniphobic coating

Methods for forming a coating can include preparing a nanocomposite film including surface modified silicon dioxide nanoparticles, applying an oxygen plasma treatment to the nanocomposite film to form a treated nanocomposite film, and applying a fluorosilane solution to the treated nanocomposite film to form the coating. A coating can include a nanocomposite film including surface modified silicon dioxide nanoparticles, the nanocomposite film having an oxygen plasma treated surface, and a monolayer of a fluoro alkyl chain.
Honeywell International Inc.

Silicone porous body and producing the same

The present invention provides, for example, a silicone porous body having a porous structure with less cracks and a high proportion of void space as well as having a strength. The silicone porous body of the present invention includes silicon compound microporous particles, wherein the silicon compound microporous particles are chemically bonded by catalysis.
Nitto Denko Corporation

Crosslinkable organopolysiloxane compositions

Moisture curable rtv-1 compositions with rapid curing and a modulus which is adjustable over a wide range include organopolysiloxanes having on-chain and side-chain silicon-bonded α-aminoalkyl groups and at least on average two silicon-bonded alkoxy groups, trialkoxyorganylsilanes and/or tetraalkoxysilanes, and organopolysiloxanes bearing alkoxysilyl groups.. .
Wacker Chemie Ag

Lens oil having a narrow molecular weight distribution for intraocular lens devices

A silicone oil having a mean molecular weight average greater than about 20,000 daltons, with no more than about 3% to about 4% of the total silicone oil by weight being comprised of components having a molecular weight less than about 15,000 daltons. In some embodiments, the silicone oil is used in intraocular lens devices..
Lensgen, Inc.

Organofunctional silicon particles, process for the production thereof and use thereof

Organofunctional silicon particles are covalently functionalized on their surface with at least one organic compound, for example a plurality of —o—(c1-c48)-alkyl compounds. The functionalization of the surface of the silicon particles makes it possible to adjust the properties of fluids in terms of their profile of properties by addition of the modified silicon particles.
Evonik Degussa Gmbh

Silicon carbide fiber reinforced silicon carbide composite material

The silicon carbide fiber reinforced silicon carbide composite material comprising a multiphase matrix containing a silicon carbide phase and a phase comprising a substance having low reactivity with respect to silicon carbide; and silicon carbide fibers disposed in the matrix can be obtained by a production step suitable for mass production. The composite material ensures greatly improved fracture toughness while maintaining the excellent properties of sic ceramics..

Core wire holder and producing silicon

A core wire holder 3 attached on an electrode 2 placed on a bottom panel of a device 20 for producing silicon by siemens process includes a silicon core wire holding portion 9 being generally circular truncated cone-shaped, and holding and energizing a silicon core wire 4. The silicon core wire holding portion 9 includes a generally circular truncated cone having an upper surface formed with a silicon core wire insertion hole 7 for holding the silicon core wire 4, and the silicon core wire holding portion 9 includes an upper surface and a side surface, which form a ridge having a curved surface and serving as a chamfered portion 8..
Tokuyama Corporation

Polycrystalline silicon rod, processing polycrystalline silicon rod, evaluating polycrystalline silicon rod, and producing fz single crystal silicon

For evaluating a polycrystalline silicon rod to be used as a raw material for production of fz si single crystals, novel evaluation values (values of characteristics×amount of crystals) including the amount of crystals grown in the growth direction (radial direction) are defined and the homogeneity in crystal characteristics in the growth direction (radial direction) is evaluated. Specifically, the homogeneity of the polycrystalline rod is evaluated by sampling a plurality of specimen plates each having, as a principal plane thereof, a cross-section perpendicular to a radial direction of the polycrystalline rod grown by a siemens method at equal intervals in the radial direction, determining values of characteristics of the crystals of the specimen plates by measurements, and by using evaluation values obtained by multiplying amounts of the crystals (relative amounts of the crystals) at sites where the specimen plates have been sampled by the values of the crystal characteristics..
Shin-etsu Chemical Co., Ltd.

Small wafer area mems switch

Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched mems switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever mems switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias..
International Business Machines Corporation

Small wafer area mems switch

Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched mems switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever mems switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias..
International Business Machines Corporation

Imaging plate multi-layer blanket

An apparatus and method of manufacturing a multiplayer image blanket with a platinum catalyzed fluorosilicone topcoat for a variable data lithography printing system. The blanket consists of multiple layers that may be: (a) a commercial carcass having a sulphur free rubber outer layer, a suitable primer layer for improving the inter-layer adhesion, and the platinum catalyzed fluorosilicone topcoat; or (b) seamless polyimide substrate coated with a platinum cured silicone, a primer layer, and the fluorosilicone topcoat..
Xerox Corporation

Solvent resistant glossy printable substrates and their methods of manufacture and use

Printable substrates that provide a glossy printable surface with solvent resistance are provided. The printable substrate may include a base sheet having a first surface and a second surface, and a printable coating on the first surface.
Neenah Paper, Inc.

Liquid discharge head, manufacturing method therefor, and recording method

A liquid discharge head comprising a silicon substrate; an insulating layer a formed on a first surface of the silicon substrate, a protective layer a that includes metal oxide and is formed on the insulating layer a, the structure that is formed on the protective layer a by direct contact with the protective layer a, includes organic resin, and forms a part of a flow path for liquid, and an element that is formed on a second surface of the silicon substrate on a side opposite to the first surface, and is configured to generate energy used for discharging the liquid.. .
Canon Kabushiki Kaisha

Liquid ejection head, manufacturing the same, and printing method

A liquid election head including a silicon substrate and an element for generating energy that is utilized for electing a liquid on the silicon substrate, wherein a protective layer a containing a metal oxide is disposed on a first surface of the silicon substrate, a structure containing an organic resin and constituting part of a liquid flow passage is disposed on the protective layer a, and an intermediate layer a containing a silicon compound is disposed between the protective layer a and the structure.. .
Canon Kabushiki Kaisha

Method for raising polishing pad and polishing method

A method for raising a polishing pad for polishing a silicon wafer, wherein a polishing pad made of foamed urethane resin is attached to a polishing machine, after dressing is performed, dummy polishing is performed, after processing to remove the polishing residues that have built up in the polishing pad by the dummy polishing is then performed, an amount of polishing residues in the polishing pad is measured, and a rise of the polishing pad subjected to the dummy polishing is judged based on the measured amount of polishing residues. As a result, a method for raising a polishing pad can improve the particle level in the polishing pad life early stage..
Shin-etsu Handotai Co., Ltd.

Oil-in-water silicone emulsion composition for die casting release agent

Organopolysiloxane emulsions having improved release properties when employed in die casting, contain an organopolysiloxane with long chain alkyl groups and/or aryl groups, and a partially hydrophobicized silica as an emulsifying agent.. .
Wacker Chemie Ag

Component for a syringe and syringe

A component for a syringe is disclosed. The component has formed a structure which has a friction-reducing effect due to its shape in the syringe.
Gerresheimer Regensburg Gmbh

Transdermal drug delivery system

A transdermal drug delivery system is provided that includes a drug-in-adhesive matrix layer and a backing layer. The matrix layer includes an active pharmaceutical ingredient, a cross-linked polyvinylpyrrolidone binder, a mesoporous silicon dioxide filler, and a pressure sensitive adhesive, while the backing layer forms an exterior facing-surface of the delivery system.
Prosolus, Inc.

Dye composition comprising a para-phenylenediamine oxidation base, an amphoteric surfactant in a medium rich in fatty substances

The present invention relates to a composition for dyeing keratin fibres, in particular human keratin fibres such as the hair, comprising: a) at least one oxidation base 3-(2,5-diaminophenyl)-1-propanol and/or acid salts thereof or solvates thereof such as hydrates; b) at least one coupler; c) at least 10% by weight of the total weight of the composition of a fatty substance which is preferably liquid and non-silicone-based; d) at least one amphoteric surfactant; e) optionally at least one basifying agent; and f) optionally at least one chemical oxidizing agent. The invention also relates to a process for dyeing keratin fibres such as the hair using the composition of the invention, and to a multi-compartment device for using the composition of the invention..
L'oreal

Dye composition comprising a para-phenylenediamine oxidation base, a nonionic surfactant in a medium rich in fatty substances

The present invention relates to a composition for dyeing keratin fibres, in particular keratin fibres such as the hair, comprising: a) at least one oxidation base 3-(2,5-diaminophenyl)-1-propanol and/or acid salts thereof or solvates thereof such as hydrates; b) at least one coupler; c) at least 10% by weight of the total weight of the composition of a fatty substance which is preferably liquid and non-silicone-based; d) at least one nonionic surfactant chosen from alkyl(poly)glycoside surfactants, esters of oxyalkylenated sorbitan and fatty acids and oxyalkylenated fatty alcohols; e) optionally at least one basifying agent; and f) optionally at least one chemical oxidizing agent. The invention also relates to a process for dyeing keratin fibres such as the hair using the composition of the invention, and to a multi-compartment device for using the composition of the invention..
L'oreal

Non-invasive medical analysis based on ts fuzzy control

The proposed method use monte carlo simulation in order to measuring the path-length of photon in different tissues. We develop a modified monte carlo algorithm based on ts fuzzy model.

Passive mattress encasement

A passive mattress encasement is disclosed which can be relatively easily installed or removed over a mattress supported by a foundation. The encasement is formed to encapsulate a mattress and includes a top panel, a bottom panel and multiple side panels.
Levitation Sciences Llc

Active mattress encasement

An active mattress encasement which can be relatively easily installed or removed or rotated over a mattress supported by a foundation is disclosed. The encasement is formed to encapsulate a mattress and may include a top panel, a bottom panel and multiple side panels.
Levitation Sciences Llc

Combination hand towel and pot holder assembly

A combination hand towel and pot holder assembly for use by an amateur cook or professional chef, the assembly having an elongate, cloth web formed of an absorbent material, the ends of the elongate web formed with pockets of the same absorbent material, the pockets formed on the same side of the web, the opposing side of the web, proximate the formed pockets would be overlaid with a heat resistant material layer, such as neoprene. The elongate web of the assembly would be of sufficient length to allow the assembly to be worn over the shoulder of the amateur cook or professional chef, the absorbent web material serving as a hand towel, and the terminus pockets in combination with the heat resistant material, such as neoprene, or a silicon compound, serve as potholders for the movement or transport of hot pots, pans or dishes..

Accessory device having a retaining feature

An accessory device for use with an electronic device is disclosed. The accessory device may include multiple layers.
Apple Inc.

Circuit protection device with self fault detection function

The invention discloses a circuit protection device with self fault detection function. The ground fault protection unit comprises a ground fault detection circuit, an ac power supply path and an electromagnetic drive circuit.
Jiaxing Shouxin Electrical Technology Co., Ltd.

Laser on silicon made with 2d material gain medium

A laser structure includes a substrate and a first dielectric layer formed on the substrate. A multi-quantum well is formed on the first dielectric layer and has a plurality of alternating layers.
International Business Machines Corporation

Electrical connector and making the same

An electrical connector includes: a plug connector including an insulative housing, plural conductive terminals affixed to the insulative housing, a shielding plate affixed to the insulative housing, and a shielding shell enclosing the insulative housing; and an insulative shell attached to the plug connector and a silicon o-ring integrated with an opening of the insulative shell.. .
Foxconn Interconnect Technology Limited

Lithium ion cell

Provided is a lithium ion battery whose manufacturing process is simple and which has high energy density and heat resistance. A lithium ion battery capable of storing and releasing lithium ions, and being provided with a separator between a positive electrode and a negative electrode having irreversible capacity at the initial charge/discharge, and having a structure in which void portions in the separator are filled with a nonaqueous electrolytic solution including lithium ions, wherein a positive electrode active material contained in the positive electrode has a first charge-discharge efficiency of 80% to 90% when charged/discharged using metal li as an counter electrode; a negative electrode active material contained in the negative electrode includes a mixed material of a silicon compound and a carbon material; in the negative electrode, lithium corresponding to an irreversible capacity at the initial charge/discharge is not doped; a capacity ratio of the negative electrode to the positive electrode at the initial electric charge capacity of the positive electrode and the negative electrode is 0.95 or more and 1 or less; the positive electrode binder contained in the positive electrode is an aqueous binder; the negative electrode binder contained in the negative electrode is a polyimide; and the nonaqueous electrolyte contains lithium bis(oxalate) borate..
Murata Manufacturing Co., Ltd.

Polymerization process for forming polymeric ultrathin conformal coatings on electrode materials

An electroactive material for use in an electrochemical cell, like a lithium ion battery, is provided. The electroactive material comprises silicon or tin and undergoes substantial expansion during operation of a lithium ion battery.
Gm Global Technology Operations Llc

Material of negative electrode for lithium secondary battery

The present invention is related to a material of negative electrode for a lithium secondary battery manufactured by alloying a material which does not form silicon and intermetallic compounds with silicon through the arc melting alloying. More particularly, the present disclosure is related to a material of negative electrode for lithium secondary battery wherein the capacity and life expectancy have been improved by mixing silicon and five or more kinds of metals which do not form an intermetallic compound with silicon to have almost the same atomic ratio in order to improve the volume expansion problem and initial efficiency characteristics of silicon when using silicon as the anode active material of a lithium secondary battery and by applying a buffering action to the volume expansion of the silicon in the charging and discharging process of the electrode through the use of high entropy alloy manufactured by alloying through arc melting..
Korea University Research And Business Foundation

Method of producing an electrode material for a battery electrode

The present invention relates to a method for producing an electrode material for a battery electrode, in particular for a lithium-ion battery, wherein said electrode material comprises nanostructured silicon carbide, comprising the steps of: a) providing a mixture including a silicon source, a carbon source and a dopant, wherein at least the silicon source and the carbon source are present in common in particles of a solid granulate; b) treating the mixture provided in step a) at a temperature in the range from ≧1400° c. To ≦2000° c., in particular in a range from ≧1650° c.
UniversitÄt Paderborn

Negative electrode active material for secondary battery, conductive composition for secondary battery, negative electrode material comprising same, negative electrode structure and secondary battery comprising same, and manufacturing same

The present invention relates to a negative electrode active material for a secondary battery, a conductive composition for a secondary battery, a negative electrode material including the same, a negative electrode structure and secondary battery including the same, and a method for manufacturing the same. The present invention includes: a silicon particle; and an amorphous surface layer formed on the surface of the silicon particle.
Samsung Electronics Co., Ltd.

Negative electrode active material for secondary battery, conductive composition for secondary battery, negative electrode material comprising same, negative electrode structure and secondary battery comprising same, and manufacturing same

The present invention relates to a negative electrode active material for a secondary battery, a conductive composition for a secondary battery, a negative electrode material including the same, a negative electrode structure and secondary battery including the same, and a method for manufacturing the same. The present invention includes: a silicon particle; and an amorphous surface layer formed on the surface of the silicon particle.
Samsung Electronics Co., Ltd.

Nanosilicon material preparation for functionalized group iva particle frameworks

Functionalized group iva particles, methods of preparing the group iva particles, and methods of using the group iva particles are provided. The group iva particles may be passivated with at least one layer of material covering at least a portion of the particle.
Kratos Llc

Stable silicon-ionic liquid interface lithium-ion batteries

The disclosure includes a composition of matter including a film formed on substantially all nsi-cpan particles included in an electrode, the film including fluorine, oxygen, sulfur, carbon and lithium.. .
The Regents Of The University Of Colorado, A Body Corporate

Negative electrode active material, secondary battery, manufacturing negative electrode, and processing device of negative electrode

As a negative electrode active material, a particle which is a mixture of silicon, lithium metasilicate, and lithium oxide is used. Because lithium metasilicate and lithium oxide are already contained in the particle of the negative electrode active material, a compound containing lithium and oxygen (lithium orthosilicate and lithium metasilicate), which is a cause of the irreversible capacity at the initial charge, is not generated any more.

Composite structures containing high capacity porous active materials constrained in shells

Provided are novel electrode material composite structures containing high capacity active materials formed into porous base structures. The structures also include shells that encapsulate these porous base structures.
Amprius, Inc.

Cylindrical nonaqueous electrolyte secondary battery

A cylindrical nonaqueous electrolyte secondary battery having an electrode body which includes a negative electrode having a negative electrode active material, and the negative electrode active material contains a compound containing silicon (si); a sealing body which has a current cutoff mechanism which includes an upper valve body and a lower valve body disposed below the upper valve body to be connected to the upper valve body, and in which when the gas pressure in a space formed between the upper valve body and the lower valve body is increased, a current path is cut off; and a bottom portion of the case body has a thin portion which forms at least a portion of a ring, and the thickness t of a portion deviating from the thin portion of the bottom portion is 0.25 mm<t<0.35 mm.. .
Sanyo Electric Co., Ltd.

Methods for fabricating a memory device with an enlarged space between neighboring bottom electrodes

Embodiments of the present invention describe a method for fabricating a memory device comprising an enlarged space between neighboring bottom electrodes comprising depositing a poly-silicon layer on a substrate depositing a carbon layer above the poly-silicon layer, patterning a photo-resist layer on the carbon layer, depositing a first spacer layer on the photo-resist layer and performing a modified photolithography process on the photo resist layer after etching back the spacer layer creating sidewalls.. .
Sony Semiconductor Solutions Corporation

Lateral avalanche photodetector

A lateral ge/si apd constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body.
Elenion Technologies, Llc

High-voltage transistor device

A semiconductor device is provided comprising a silicon-on-insulator (soi) substrate comprising a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate and a semiconductor layer formed on the buried oxide layer and a transistor device, wherein the transistor device comprises a gate electrode formed by a part of the semiconductor bulk substrate, a gate insulation layer formed by a part of the buried oxide layer and a channel region formed in a part of the semiconductor layer.. .
Globalfoundries Inc.

Method of making split gate non-volatile flash memory cell

A method of forming a non-volatile memory cell on a substrate having memory cell and logic circuit regions by forming a pair of conductive floating gates in the memory cell region, forming a first source region in the substrate between the pair of floating gates, forming a polysilicon layer in both regions, forming an oxide layer over the polysilicon layer in the logic circuit region, performing a chemical-mechanical polish of the polysilicon layer in the memory cell area leaving a first block of the polysilicon layer between the floating gates that is separated from remaining portions of the polysilicon layer, and selectively etching portions of the polysilicon layer to result in: second and third blocks of the polysilicon layer disposed in outer regions of the memory cell area, and a fourth block of the polysilicon layer in the logic circuit region.. .
Silicon Storage Technology, Inc.

Two-step dummy gate formation

A method includes forming isolation regions extending into a semiconductor substrate, and recessing the isolation regions. A portion of the semiconductor substrate between the isolation regions protrudes higher than the isolation regions to form a semiconductor fin.
Taiwan Semiconductor Manufacturing Company, Ltd.

Dummy dielectric fins for finfets with silicon and silicon germanium channels

A method for forming a semiconductor device includes forming first fins from a first semiconductor material and second fins from a second semiconductor material and encapsulating the first fins and the second fins with a protective dielectric. Semiconductor material between the first fins and the second fins is etched to form trenches.
International Business Machines Corporation

Dummy dielectric fins for finfets with silicon and silicon germanium channels

A method for forming a semiconductor device includes forming first fins from a first semiconductor material and second fins from a second semiconductor material and encapsulating the first fins and the second fins with a protective dielectric. Semiconductor material between the first fins and the second fins is etched to form trenches.
International Business Machines Corporation

Nickel silicide implementation for silicon-on-insulator (soi) radio frequency (rf) switch technology

A radio frequency (rf) switch includes a plurality of series-connected silicon-on-insulator (soi) cmos transistors fabricated using a 0.13 micron (or larger) process, wherein the soi cmos transistors include nickel silicide formed on the source/drain regions. Each of the series-connected soi cmos transistors has a gate length of about 0.13 microns or more, thereby enabling these soi cmos transistors to handle high power rf signals, and exhibit the high breakdown voltages required to implement an rf switch.
Newport Fab, Llc Dba Jazz Semiconductor, Inc.

Method for producing semiconductor device

An sgt is produced by forming a first insulating film around a fin-shaped semiconductor layer, forming a pillar-shaped semiconductor layer in an upper portion of the fin-shaped layer, forming a second insulating film, a polysilicon gate electrode covering the second insulating film, and a polysilicon gate line, forming a diffusion layer in an upper portion of the fin-shaped layer and a lower portion of the pillar-shaped layer, forming a metal-semiconductor compound in an upper portion of the diffusion layer in the fin-shaped layer, depositing an interlayer insulating film, exposing and etching the polysilicon gate electrode and gate line, depositing a first metal, forming a metal gate electrode and a metal gate line, and forming a third metal sidewall on an upper side wall of the pillar-shaped layer. The third metal sidewall is connected to an upper surface of the pillar-shaped layer..
Unisantis Electronics Singapore Pte. Ltd.

Electric field shielding in silicon carbide metal-oxide-semiconductor (mos) device cells using body region extensions

The subject matter disclosed herein relates to semiconductor power devices, such as silicon carbide (sic) power devices. In particular, the subject matter disclosed herein relates to shielding regions in the form of body region extensions for that reduce the electric field present between the well regions of neighboring device cells of a semiconductor device under reverse bias.
General Electric Company

Electric field shielding in silicon carbide metal-oxide-semiconductor (mos) device cells

The subject matter disclosed herein relates to semiconductor power devices, such as silicon carbide (sic) power devices. In particular, the subject matter disclosed herein relates to disconnected or connected shielding regions that reduce the electric field present between the well regions of neighboring device cells of a semiconductor device under reverse bias.
General Electric Company

Electric field shielding in silicon carbide metal-oxide-semiconductor (mos) devices having an optimization layer

The subject matter disclosed herein relates to silicon carbide (sic) power devices. In particular, the present disclosure relates to shielding regions for use in combination with an optimization layer.
General Electric Company

Electric field shielding in silicon carbide metal-oxide-semiconductor (mos) device cells using channel region extensions

The subject matter disclosed herein relates to semiconductor power devices, such as silicon carbide (sic) power devices. In particular, the subject matter disclosed herein relates to shielding regions in the form of channel region extensions for that reduce the electric field present between the well regions of neighboring device cells of a semiconductor device under reverse bias.
General Electric Company

Floating body contact circuit improving esd performance and switching speed

Embodiments of systems, methods, and apparatus for improving esd performance and switching time for semiconductor devices including metal-oxide-semiconductor (mos) field effect transistors (fets), and particularly to mosfets fabricated on semiconductor-on-insulator (“soi”) and silicon-on-sapphire (“sos”) substrates.. .
Peregrine Semiconductor Corporation

Light emitting diodes (leds) with integrated cmos circuits

Disclosed is a multi-color semiconductor led display with integrated with cmos circuit components, such as thin film transistors (tfts). Leds of the display are disposed on a first major surface of a substrate while cmos circuit components which are configured as circuitry for operating the display are disposed on a second opposing major surface of the substrate.
Globalfoundries Inc.

Display device

A display device is disclosed, which includes: a first substrate; a first thin film transistor disposed on the first substrate; a second thin film transistor disposed on the first substrate; a first capacitance electrode; and a second capacitance electrode. The first thin film transistor includes: a first semiconductor layer comprising silicon; and a first electrode electrically connected to the first semiconductor layer.
Innolux Corporation

Method of fabricating non-volatile memory device array

A method of fabricating nanocrystal memory array includes stacking a silicon layer and a silicon germanium layer on a wafer. A gate oxide layer over is then formed on the silicon layer and the silicon germanium layer.
Taiwan Semiconductor Manufacturing Co., Ltd.

Single mask level including a resistor and a through-gate implant

A method of forming an ic includes providing a field dielectric in a portion of a semiconductor surface, a bipolar or schottky diode (bsd) class device area, a cmos transistor area, and a resistor area. A polysilicon layer is deposited to provide a polysilicon gate area for mos transistors in the cmos transistor area, over the bsd class device area, and over the field dielectric for providing a polysilicon resistor in the resistor area.
Texas Instruments Incorporated

Packaging a substrate with an led into an interconnect structure only through top side landing pads on the substrate

Standardized photon building blocks are packaged in molded interconnect structures to form a variety of led array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which led dies are mounted.
Bridgelux, Inc.

Through silicon via chip and manufacturing method thereof, fingerprint identification sensor and terminal device

A through silicon via chip and manufacturing method thereof are provided, where the through silicon via chip includes a silicon substrate, the silicon substrate is provided with a via, the via is an oblique via, and a backfill structure layer is disposed in the via. According to the through silicon via chip and manufacturing method thereof, a fingerprint identification sensor and a terminal device, a backfill structure is added in an oblique via to play a supportive role when a force is exerted on a surface of the through silicon via chip, which avoids a fracture of the through silicon via chip, thereby enhancing structural strength of the through silicon via chip..
Shenzhen Goodix Technology Co., Ltd.

Structure, and electronic component and electronic device including the structure

Provided herein is a structure having desirable heat dissipation, particularly a structure having high far-infrared emissivity. An electronic component including such a structure, and an electronic device including the electronic component are also provided.
Panasonic Intellectual Property Management Co., Ltd.

Method for plasma etching a workpiece

A method of plasma etching one or more features in a silicon substrate includes performing a main etch using a cyclical etch process in which a deposition step and an etch step are alternately repeated, and performing an over etch to complete the plasma etching of the features. The over etch includes one or more etch steps of a first kind and one or more etch steps of a second kind, each of the etch steps of the first and second kind include etching by ion bombardment of the silicon substrate.
Spts Technologies Limited

Chemical mechanical polishing slurry, chemical mechanical polishing and manufacturing semiconductor structure

A chemical mechanical polishing (cmp) slurry, a method for cmp, and a manufacturing method of a semiconductor structure are provided. The cmp slurry includes a ph-adjustor for providing an alkaline environment in the cmp slurry and a silicon inhibitor for lowering a removal rate of silicon.
Taiwan Semiconductor Manufacturing Company Ltd.

Oxide film removing method, oxide film removing apparatus, contact forming method, and contact forming system

Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ald using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film..
Tokyo Electron Limited

Method for manufacturing epitaxial silicon wafer and vapor phase growth device

A vapor deposition apparatus includes an exhaust regulator provided in an exhaust pipe to regulate exhaust of the reaction chamber and including: a hollow frustum upstream baffle having a larger first opening near a reaction chamber than a second opening near an exhaust device; and a hollow frustum downstream baffle provided near the exhaust device with respect to the upstream baffle and having a larger third opening near the reaction chamber than a fourth opening near the exhaust device. The upstream baffle and downstream baffle are designed so that b/a and c/a are 0.33 or less, at least one of b/a and c/a is 0.26 or less, and (b+c)/a is 0.59 or less, where an inner diameter of the exhaust pipe and diameters of the first and third openings are a, a diameter of the second opening is b and a diameter of the fourth opening is c..
Sumco Corporation

Method for patterning a substrate using a layer with multiple materials

Techniques herein enable integrating stack materials and multiple color materials that require no corrosive gases for etching. Techniques enable a multi-line layer for self-aligned pattern shrinking in which all layers or colors or materials can be limited to silicon-containing materials and organic materials.
Tokyo Electron Limited

Methods for forming doped silicon oxide thin films

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface.
Asm International N.v.

Compositions and methods using same for deposition of silicon-containing films

Described herein are compositions and methods using same for forming a silicon-containing film or material such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film in a semiconductor deposition process, such as without limitation, a plasma enhanced atomic layer deposition of silicon-containing film.. .
Versum Materials Us, Llc

Substrate processing method and substrate processing apparatus

A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.. .
Hitachi Kokusai Electric Inc.

Method of manufacturing silicon carbide semiconductor device

In accordance with the following step of a method of manufacturing a mosfet, a first cutting step of cutting a silicon carbide wafer along a plane substantially parallel to a {11-20} plane is performed. After the first cutting step, a second cutting step of cutting the silicon carbide wafer along a plane substantially perpendicular to the {11-20} plane and substantially perpendicular to the first main surface is performed..
Sumitomo Electric Industries, Ltd.

Manufacturing monocrystalline silicon and monocrystalline silicon

A manufacturing method of a monocrystalline silicon includes: a growth step in which a seed crystal having contacted a silicon melt is pulled up and a crucible is rotated and raised to form a straight body of the monocrystalline silicon; a separating step in which the monocrystalline silicon is separated from the silicon melt; a state holding step in which the crucible and the monocrystalline silicon are lowered and the monocrystalline silicon is kept at a level at which an upper end of the straight body is located at the same level as an upper end of a heat shield or is located below the upper end of the heat shield for a predetermined time; and a draw-out step in which the monocrystalline silicon is drawn out of a chamber.. .
Sumco Corporation





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