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Silicon patents

      

This page is updated frequently with new Silicon-related patent applications.

Shin-etsu Chemical Co., Ltd.
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Hitachi, Ltd.
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Samsung Sdi Co., Ltd.
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Heater tube for molten metal immersion
A heater tube for molten metal immersion 1 has a cylindrical heater housing part 4 equipped with a closed end 2 and an open end 3, wherein the heater housing part 4 comprises silicon nitride, a compound comprising yttrium, and a compound comprising magnesium. The heater housing part 4 has a surface roughness ra of an outer circumferential surface of the heater housing part 4 is between 0.5 μm and 10 μm, inclusive..
Mitsui Mining & Smelting Co., Ltd.


Sound absorbing material and manufacturing method thereof and speaker using sound absorbing material
The present disclosure provides a sound absorbing material, a manufacturing method thereof and a speaker using the sound absorbing material. The speaker comprises a shell with a receiving space, a sound production unit disposed in the shell, and a rear cavity encircled by the sound production unit and the shell.
Aac Technologies Pte. Ltd.


Data flow configuration in hybrid system of silicon and micro-electro-mechanical-switch (mems) elements
Certain embodiments of the present disclosure provide a method for communicating data flows. The method generally includes receiving control flow information corresponding to a data flow for communication from a first device to a second device, and determining one or more characteristics of the data flow based on the control flow information.
International Business Machines Corporation


Temperature insensitive delay line interferometer
A silicon photonics based temperature-insensitive delay line interferometer (dli). The dli includes a first arm comprising a first length of a first material characterized by a first group index corresponding to a first phase delay to transfer a first light wave with a first peak frequency and a second arm comprising a second length of a second material characterized by a second group index corresponding to a second phase to transfer a second light wave with a second peak frequency with a time-delay difference relative to the first light wave.
Inphi Corporation


Compact 3d receiver architecture using silicon germanium thru silicon via technology
A wide bandwidth radio system designed to adapt to various global radio standards and, more particularly, to a system and method incorporate a compact receiver array design to support the demand for increased mobile broadband services using a through-silicon vias to interconnect front-end analog functions in sige bicmos to backend circuitry in cmos.. .
Gm Global Technology Operations Llc


Fully depleted silicon on insulator power amplifier
The present disclosure generally relates to semiconductor structures and, more particularly, to a fully depleted silicon on insulator power amplifier with unique biases and voltage standing wave ratio protection and methods of manufacture. The structure includes a pseudo-differential common source amplifier; first stage cascode devices connected to the pseudo-differential common source amplifier and protecting the pseudo-differential common source amplifier from an over stress; second stage cascode devices connected to the first stage cascode devices and providing differential outputs; and at least one loop receiving the differential outputs from the second stage cascode devices and feeding back the differential outputs to the second stage cascode devices..
Globalfoundries Inc.


Protective structure of stator and fan using the same

The present invention relates to a protective structure of a stator and a fan using the same. The protective structure of a stator comprises plural silicon steel sheets, at least one first filler, and a cover body.
Asia Vital Components Co., Ltd.

High holding voltage clamp

An electrostatic discharge (esd) protection device with a high holding voltage is disclosed including at least an esd clamp coupled to a holding voltage tuning circuit. The esd clamp may be coupled to the holding voltage tuning circuit through a connection circuit such as a diode.
Sofics Bvba

Microfabricated optical apparatus with grounded metal layer

A microfabricated optical apparatus that includes a light source driven by a waveform, wherein the waveform is delivered to the light source by at least one through silicon via. The microfabricated optical apparatus may also include a light-sensitive receiver which generates an electrical signal in response to an optical signal.
Innovative Micro Technology

Porous silicon-silicon oxide-carbon composite, and preparing the same

The present invention relates to a porous silicon-silicon oxide-carbon composite comprising a silicon oxide-carbon structure and silicon particles, wherein the silicon oxide-carbon structure comprises a plurality of micropores, and the silicon particles are uniformly distributed in the silicon oxide-carbon structure. The porous silicon-silicon oxide-carbon composite of the present invention shows decreased volume expansion due to the intercalation of lithium ions and improved electric conductivity, and has a porous structure.
Korea Advanced Institute Of Science And Technology

High capacity monolithic composite si/carbon fiber electrode architectures synthesized from low cost materials and process technologies

A composite si-carbon fiber comprising a carbon matrix material with 1-90 wt % silicon embedded therein. The composite carbon fibers are incorporated into electrodes for batteries.
Ut-battelle, Llc

Method of producing a housing cover, producing an optoelectronic component, and optoelectronic component

A method of producing a housing cover includes providing a cover blank having a mounting surface formed on an underside; connecting the underside of the cover blank to a silicon slice; creating at least one opening in the silicon slice to expose at least part of the mounting surface; arranging a base metallization on the exposed part of the mounting surface; and removing the silicon slice.. .
Osram Opto Semiconductors Gmbh

Method of fabricating thin film photovoltaic devices

Thin film silicon photovoltaic cell arrangements that include a heavily doped p-type polycrystalline silicon layer spaced-apart from the substrate and bottom electrode in order to reduce grain defects by initiating crystallization at a location far from the substrate. This is accomplished by forming a device structure incorporating such amorphous silicon films on a substrate and annealing at elevated temperature to crystallize the a-si films such that the crystallization of the a-si starts within the spaced-apart heavily doped p-type layer and proceeds through the intrinsic silicon layer..

High performance solar cells, arrays and manufacturing processes therefor

High performance single crystal silicon cells and arrays thereof are manufactured using a rapid process flow. Tunneling junctions formed in the process provide performance benefits, such as higher efficiency and a lower power temperature coefficient.
Mpower Technology, Inc.

Photoelectric conversion device, manufacturing the same, and camera

A photoelectric conversion device has a silicon substrate which includes a first portion configured to perform photoelectric conversion, and a second portion which is arranged farther apart from a light receiving surface of the silicon substrate than the first portion and contains carbon. A first peak concentration as a carbon peak concentration in the second portion is not less than 1×1018 [atoms/cm3] and not more than 1×1020 [atoms/cm3], and a second peak concentration as an oxygen peak concentration in the second portion is not less than 1/1000 and not more than 1/10 of the first peak concentration..
Canon Kabushiki Kaisha

Method of forming conformal epitaxial semiconductor cladding material over a fin field effect transistor (finfet) device

The present disclosure generally relates to devices having conformal semiconductor cladding materials, and methods of forming the same. The cladding material is a silicon germanium epitaxial material.
Applied Materials, Inc.

Contact structure and extension formation for iii-v nfet

Finfet devices including iii-v fin structures and silicon-based source/drain regions are formed on a semiconductor substrate. Silicon is diffused into the iii-v fin structures to form n-type junctions.
International Business Machines Corporation

Cascode configured semiconductor component

In accordance with an embodiment, a cascode connected semiconductor component and a method for manufacturing the cascode connected semiconductor component are provided. The cascode connected semiconductor component has a pair of silicon based transistors, each having a body region, a gate region over the body region, a source region and a drain.
Semiconductor Components Industries, Llc

Silicon carbide vertical mosfet with polycrystalline silicon channel layer

A semiconductor device may include a semiconductor body of silicon carbide (sic) and a field effect transistor. The field effect transistor has the semiconductor body that includes a drift region.
Infineon Technologies Ag

Semiconductor device and manufacturing method

A semiconductor device includes: a first conductivity type semiconductor substrate made of silicon carbide; a second conductivity type body region in a device region of the semiconductor substrate; a first conductivity type source region formed in the body region; and a gate electrode formed on the body region through gate insulating films. The semiconductor device further includes, in a termination region of the semiconductor substrate, second conductivity type resurf layers, and an edge termination region formed in the resurf layers.
Renesas Electronics Corporation

Semiconductor device and manufacturing the same

A semiconductor device is provided. The semiconductor device includes a n− type layer disposed at a first surface of a n+ type silicon carbide substrate and a trench disposed at the n− type layer.
Kia Motors Corporation

Semiconductor device and method manufacturing the same

A semiconductor device may include an n− type layer disposed at a first surface of an n+ type silicon carbide substrate; a trench disposed at the n− type layer; a p type region, an n+ type region, and a p+ type region disposed at an upper portion in the n− type layer; a gate insulating layer disposed on the n− type layer, the n+ type region, and the p type region; a gate electrode disposed on the gate insulating layer; an insulating layer disposed on the gate electrode; a source electrode disposed on the insulating layer and in the trench; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate, wherein the source electrode includes an ohmic junction region and a schottky junction region.. .
Kia Motors Corporation

Semiconductor device and method manufacturing the same

A semiconductor device may include an n− type layer disposed at a first surface of an n+ type silicon carbide substrate; a p− type region, a p type region, an n+ type region, and a p+ type region disposed at an upper portion in the n− type layer; a gate electrode and a source electrode disposed on the n− type layer and insulated from each other; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate, wherein the source electrode is in contact with the p− type region, the n+ type region, and the p+ type region, and the source electrode may include an ohmic junction region disposed at a contact portion of the source electrode and the n+ type region and the contact portion of the source region and the p+ type region and a schottky junction region disposed at the contact portion of the source electrode and the p− type region.. .
Kia Motors Corporation

Semiconductor device and method manufacturing the same

A semiconductor device may include an n− type layer sequentially disposed at a first surface of an n+ type silicon carbide substrate; a p type region disposed in the n− type layer; an auxiliary n+ type region disposed on the p type region or in the p type region; an n+ type region disposed in the p type region; an auxiliary electrode disposed on the auxiliary n+ type region and the p type region; a gate electrode separated from the auxiliary electrode and disposed on the n− type layer; a source electrode separated from the auxiliary electrode and the gate electrode; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate, wherein the auxiliary n+ type region and the n+ type region are separated from each other, and the source electrode is in contact with the n+ type region.. .
Kia Motors Corporation

Process to etch semiconductor materials

The present disclosure describes a method which can selectively etch silicon from silicon/silicon-germanium stacks or silicon-germanium from silicon-germanium/germanium stacks to form germanium-rich channel nanowires. For example, a method can include a multilayer stack formed with alternating layers of a silicon-rich material and a germanium-rich material.
Taiwan Semiconductor Manufacturing Co., Ltd.

Method for crystallizing metal oxide semiconductor layer, semiconductor structure, active array substrate, and indium gallium zinc oxide crystal

The present invention provides a method for crystallizing a metal oxide semiconductor layer, a semiconductor structure, a method for manufacturing a semiconductor structure, an active array substrate, and an indium gallium zinc oxide crystal. The crystallization method includes the following steps: forming an amorphous metal oxide semiconductor layer on a substrate; forming an oxide layer on the amorphous metal oxide semiconductor layer; forming an amorphous silicon layer on the oxide layer; and irradiating the amorphous silicon layer by using a laser, so as to heat the amorphous silicon layer, where the heated amorphous silicon layer heats the amorphous metal oxide semiconductor layer, so that the amorphous metal oxide semiconductor layer is converted into a crystallized metal oxide semiconductor layer..
Au Optronics Corporation

Thin film transistor array substrate and liquid crystal panel

The present disclosure discloses a thin film transistor array substrate and a liquid crystal panel. The thin film transistor array substrate comprises a substrate, a silicon thin film transistor formed on the substrate, an oxide semiconductor transistor, and a capacitor.
Wuhan China Star Optoelectronics Technology Co., Ltd.

Semiconductor device and manufacturing the same

A method of manufacturing a semiconductor device, includes forming a fin structure on a main surface of semiconductor substrate, the fin structure including a silicon material; forming a first gate electrode over the fin structure via a first insulating film, and forming a second gate electrode over the fin structure via a second insulating film having a charge accumulating part, such that the second gate electrode is disposed along a sidewall of the first gate electrode in a plan view; forming source and drain regions over a surface of the fin structure at both sides of a structure defined by the first and second gate electrodes; performing a first heat treatment to the semiconductor substrate to keep the semiconductor substrate at a first predetermined temperature; and forming a first metal film on the fin structure by sputtering in condition that the semiconductor substrate is at the first predetermined temperature.. .
Renesas Electronics Corporation

Method of providing layout design of sram cell

A method of providing a layout design of an sram cell includes: providing a substrate layout comprising a first oxide diffusion area, a second oxide diffusion area, a first polysilicon layout, and a second polysilicon layout, wherein the first polysilicon layout extends across the first oxide diffusion area and the second oxide diffusion area, and the second polysilicon layout extends across the first oxide diffusion area and the second oxide diffusion area; forming a first pull-up transistor on the first oxide diffusion area and the first polysilicon layout; forming a first pull-down transistor on the second oxide diffusion area and the first polysilicon layout; forming a second pull-up transistor on the first oxide diffusion area and the second polysilicon layout; and forming a second pull-down transistor on the second oxide diffusion area and second first polysilicon layout.. .
Taiwan Semiconductor Manufacturing Company Ltd.

Semiconductor device and electronic apparatus

A semiconductor device, including a first semiconductor chip including a first substrate having a semiconductor larger in bandgap than silicon, the first semiconductor chip being formed with a first fet including a first gate electrode, a first source, and a first drain, a second semiconductor chip including a second substrate having a semiconductor larger in bandgap than silicon, the second semiconductor chip being formed with a second fet having a second gate electrode, a second source, and a second drain, and a third semiconductor chip including a third substrate having silicon, the third semiconductor chip being formed with a mosfet including a third gate electrode, a third source, and a third drain. The first semiconductor chip and the second semiconductor chip are mounted over a first chip mounting section, and the third semiconductor chip is mounted over a second chip mounting section..
Renesas Electronics Corporation

Mass transfer of micro structures using adhesives

Mass transfer of micro structures are effected from one substrate to another using adhesives. In the context of an integrated micro led display, a micro led array is fabricated on a native substrate and corresponding cmos pixel drivers are fabricated on a separate substrate.
Hong Kong Beida Jade Bird Display Limited

Semiconductor copper metallization structure and related methods

Implementations of semiconductor packages may include: a silicon die including a pad, the pad including aluminum and copper; a passivation layer over at least a portion of the silicon die and a layer of one of a polyimide (pi) a polybenzoxazole (pbo), or a polymer resin coupled to the passivation layer. The package may include a first copper layer coupled over the pad, the first copper layer being about 1 microns to about 20 microns thick; a second copper layer coupled over the first copper layer, the second copper layer may be about 5 microns to about 40 microns thick; where a width of the first copper layer above the pad may be wider than a width of the second copper layer above the pad.
Semiconductor Components Industries, Llc

Through-silicon via with improved substrate contact for reduced through-silicon via (tsv) capacitance variability

The present disclosure relates to semiconductor structures and, more particularly, to through-silicon via (tsv) structures with improved substrate contact and methods of manufacture. The structure includes: a substrate of a first species type; a layer of different species type on the substrate; a through substrate via formed through the substrate and comprising an insulator sidewall and conductive fill material; a second species type adjacent the through substrate via; a first contact in electrical contact with the layer of different species type; and a second contact in electrical contact with the conductive fill material of the through substrate via..
Globalfoundries Inc.

Current sensor and making a current sensor

A current sensor comprises a current conductor having a first portion, a measuring portion and a second portion, the first portion including one or more first electrical terminals and the second portion including one or more second electrical terminals. The current sensor further comprises third electrical terminals and a semiconductor chip.
Melexis Technologies Sa

Semiconductor substrate, semiconductor device and forming the same

A semiconductor device, a semiconductor substrate and a method of forming the same are disclosed. The semiconductor substrate includes a first silicon-containing layer, a single crystalline iii-v compound semiconductor layer and an amorphous iii-v compound semiconductor layer.
Nuvoton Technology Corporation

Bimos device with a fully self-aligned emitter-silicon and manufacturing the same

A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation layer, a sacrificial layer, and a second isolation layer.
Infineon Technologies Ag

Structure and high performance large-grain-poly silicon backplane for oled applications

Large grain polysilicon films can be exfoliated on a handle substrate, such as a glass or glass-ceramic substrate. The large grain polysilicon can have high mobility for device formation, and can be used for backplane of a display or a sensor array for x-ray detection..

Ion injector and lens system for ion beam milling

The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner.
Lam Research Corporation

Method of selectively etching first region made of silicon nitride against second region made of silicon oxide

Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine..
Tokyo Electron Limited

Method of forming a nitride semiconductor substrate

In a method of forming a nitride semiconductor substrate, a nitride semiconductor substrate may be formed on a silicon substrate. A protection layer may be formed to cover a surface of the nitride semiconductor substrate.
Samsung Electronics Co., Ltd.

Monocrystal and polycrystal texturing device

A monocrystal and polycrystal texturing device includes a device body, various stations arranged in the device body, a transmission device and a control system. The various stations are respectively a dipping acid texturing station, a spray washing station, a drying station, a spray alkali texturing station, a spray washing station, a dipping acid treatment station, a spray washing station, an acid treatment station, a spray washing station and a drying station arranged in sequence.
Changzhou S.c Exact Equipment Co., Ltd.

Methods and preventing counter-doping during high temperature processing

In a described example method, semiconductor wafer with a backside silicon nitride layer is encapsulated with a diffusion barrier layer prior to a high temperature anneal greater than about 1000 degrees celsius. After the high temperature anneal the diffusion barrier layer and the backside silicon nitride layers are stripped..
Texas Instruments Incorporated

Flame retardant resin composition, and cable and optical fiber cable using the same

Disclosed is a flame retardant resin composition containing a polyolefin resin, a silicone compound, a fatty acid containing compound, calcium carbonate, and a triazine ring containing hindered amine compound. In this composition, relative to 100 parts by mass of the polyolefin resin, the silicone compound is blended at a ratio of 1.5 parts by mass or more and 10 parts by mass the fatty acid containing compound is blended at a ratio of 3 parts by mass or more and 20 parts by mass, the calcium carbonate is blended at a ratio of 10 parts by mass or more and less than 120 parts by mass, the triazine ring containing hindered amine compound is blended at a ratio of 0.05 part by mass or more and less than 10 parts by mass, and the triazine ring containing hindered amine compound includes an oxygen atom..
Fujikura Ltd.

Forming multi-sized through-silicon-via (tsv) structures

Various embodiments include approaches for designing through-silicon vias (tsvs) in integrated circuits (ics). In some cases, a method includes: identifying types of through-silicon vias (tsvs) for placement within an integrated circuit (ic) design based upon an electrical requirement for the tsvs, wherein the ic design includes distinct types of tsvs; calculating etch and fill rates for the ic design with the distinct types of tsvs with common etching and filling processes; and providing fabrication instructions to form the distinct types of tsvs according to the calculated etch and fill rates in the common processes..
Globalfoundries Inc.

Dispatch of processor read results

In a multi-core, multi-tenant computing environment a shared cache is removed, and that space on the silicon of a cpu chip is designed to include a static register file scratchpad that is visible to the system security software. Such a static register file may be explicitly managed, where its security properties can be reasoned about via the system security software.
Palo Alto Research Center Incorporated

Method using silicon-containing underlayers

Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.. .
Rohm And Haas Electronic Materials Llc

Method using silicon-containing underlayers

Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, are provided.. .
Rohm And Haas Electronic Materials Llc

Optical module including silicon photonics chip and coupler chip

An optical module includes a waveguide interconnect that transports light signals; a silicon photonics chip that modulates the light signals, detects the light signals, or both modulates and detects the light signals; a coupler chip attached to the silicon photonics chip and the waveguide interconnect so that the light signals are transported along a light path between the silicon photonics chip and the waveguide interconnect; and one of the silicon photonics chip and the coupler chip includes first, second, and third alignment protrusions. The other of the coupler chip and the silicon photonics chip includes a point contact, a linear contact, and a planar contact.
Samtec, Inc.

Silicon-waveguide-based broadband polarization beam rotator

A compact polarization beam rotator includes a converter waveguide comprising a first segment and a second segment both in corresponding taper rib shapes sharing a first middle plane and configured to receive an input optical signal with tm polarization mode from an input plane and convert the tm polarization mode to te1 polarization mode comprising a first arm mode and a second arm mode at a second middle plane. The polarization beam rotator additionally includes a splitter waveguide coupled to the second middle plane for separating the first arm mode and the second arm mode at a third plane respectively coupled to a first branch waveguide to deliver the first arm mode in phase and a second branch waveguide to reverse the second arm mode phase by 180°, and a 2×1 mmi coupler waveguide to combine both arm modes in phase to an output optical signal with te polarization mode..
Inphi Corporation

Microfluidic photoionization detector

A rapid flow-through, highly sensitive microfluidic photoionization detector (pid) which is micro-fabricated directly onto a substrate, such as a conductive silicon wafer, is provided. The microfluidic pid has an ionization chamber volume of less than 9 μl.
The Regents Of The University Of Michigan

Chip-scale gas chromatography

A miniaturized gas chromatography system integrated on single chip comprising a sample injection unit, a separation column having an inlet, an exit and an interior surface, at least one detector located at the separation column exit and the sample injection unit having a t-shaped configuration. The column may be coated with room temperature ionic liquids, with and without an intermediate layer between the room temperature ionic liquid and the silicon surface..

Thin film material residual stress testing structure and method

A thin film material residual testing structure comprises two groups of structures. The first group of structures comprises an electrostatic driven polysilicon cantilever beam, an asymmetrical cross beam made of thin film material to be tested and having an alignment structure, and a double-end fixed support beam made of the thin film material to be tested.
Southeast University

Hemispherical resonance micromechanical gyroscope and processing method thereof

The present invention relates to a micromachined hemispherical resonance gyroscope, which includes a resonant layer, wherein the resonant layer comprises a hemispherical shell whose top point of the hemispherical shell is its anchor point; several silicon hemispherical electrodes are ananged around the hemispherical shell, the silicon hemispherical electrodes include driving electrodes, equilibrium electrodes, shielded electrodes and signal detection electrodes or quadrature correction electrodes, the hemispherical shell and the several silicon spherical electrodes which sunound the hemispherical shell constitute several capacitors. The hemispherical resonance micromechanical gyroscope utilizes a processing method on the basis of silicon micromachining, which leads to small size and low production cost, as well as batch production capacity, meanwhile its sensitivity is independent of amplitude and its driving voltage could be very low, as a result its output noise could be significantly reduced, and its accuracy is better than the gyroscope products in the prior art..
Suzhou Wenzhixin Micro System Technology Co., Ltd

Component and manufacturing a component

A bearing component, such as a bearing roller or a bearing ring, has an exterior surface and includes at least one interior region made of a recycled material which region is spaced from and does not form any part of the exterior surface. The recycled material and the unrecycled material may each include silicon nitride and/or sialon and/or silicon carbide and/or a ceramic material.
Aktiebolaget Skf

Fluoro-containing thermal chemical vapor deposition process and article

Thermal chemical vapor deposition treatment is disclosed. Specifically, a thermal chemical vapor deposition treated article includes a substrate, and an oleophobic treatment to the substrate, the oleophobic treatment having oxygen, carbon, silicon, fluorine, and hydrogen.
Silcotek Corp.

Chromium-free thermal spray composition, method, and apparatus

A composition, method for depositing the composition on a downhole component, and a downhole tool. The composition includes about 0.25 wt % to about 1.25 wt % of carbon, about 1.0 wt % to about 3.5 wt % of manganese, about 0.1 wt % to about 1.4 wt % of silicon, about 1.0 wt % to about 3.0 wt % of nickel, about 0.0 to about 2.0 wt % of molybdenum, about 0.7 wt % to about 2.5 wt % of aluminum, about 1.0 wt % to about 2.7 wt % of vanadium, about 1.5 wt % to about 3.0 wt % of titanium, about 0.0 wt % to about 6.0 wt % of niobium, about 3.5 wt % to about 5.5 wt % of boron, about 0.0 wt % to about 10.0 wt % tungsten, and a balance of iron..
Antelope Oil Tool & Mfg. Co., Llc

Amorphous alloy material

An amorphous alloy material is provided, including 55%˜65% iron, 10%˜20% cobalt, 13%˜17% silicon, 8%˜12% boron and unavoidable impurity in weight percentage. The amorphous alloy material has good soft magnetic performance..
Metal Industries Research & Development Centre

Coil spring steel

Disclosed herein is a coil spring steel, comprising, by weight, carbon (c): about 0.51% to about 0.57%, silicon (si): about 1.35% to about 1.45%, manganese (mn): about 0.95% to about 1.05%, phosphorus (p): from about 0.003% to about 0.015%, sulfur (s): from about 0.003% to about 0.010%, chromium (cr): from about 0.70% to about 0.90%, copper (cu): from about 0.30% to about 0.40%, vanadium (v): from about 0.10% to about 0.15%, aluminum (al): from about 0.010% to about 0.040%, titanium (ti) from about 0.010% to about 0.033%, molybdenum (mo): from about 0.05% to about 0.15%, nickel (ni): from about 0.25% to about 0.35%, and a balance of iron (fe) and inevitable impurities to form 100%.. .
Hyundai Steel Company

Black heart malleable cast iron and manufacturing method thereof

A black heart malleable cast iron including carbon of not lower than 2.0% and not higher than 3.4%; silicon of not lower than 0% and not higher than 1.4%; aluminum of not lower than 2.0% and not higher than 6.0%, which are all expressed by percent by mass; and balance iron and inevitable impurities, wherein a value of a carbon equivalent ce expressed by equation (1) is not lower than 3.0% and not higher than 4.2%, where c denotes a content of the carbon expressed by percent by mass, si denotes a content of the silicon expressed by percent by mass and al denotes a content of the aluminum expressed by percent by mass: ce=c+si/3+al/8 (1).. .
Hitachi Metals, Ltd.

Etching composition and fabricating semiconductor device by using the same

An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (sige)..
Soulbrain Co., Ltd.

Organopolysiloxane composition and producing same, and silicone composition for mist suppressor as well as solvent-free release paper or release film

An organopolysiloxane composition obtained by dissolving in a solvent an organopolysiloxane crosslinked product obtained by repeating one or more times a process of again introducing an organopolysiloxane and an organohydrogenpolysiloxane to a product, obtained by conducting an addition reaction of an organopolysiloxane of a specific structure and an organohydrogenpolysiloxane of a specific structure using a platinum group metal-based compound in 10-50 times the total mass of these polysiloxanes, and conducting an addition reaction using a platinum group metal-based compound.. .
Shin-etsu Chemical Co., Ltd.

Method of applying rapid cure silicone lubricious coatings

A silicone coating process that improves the durability of silicone coatings on the surfaces of surgical needles and other medical devices. The silicone coated surgical needles or medical devices produced by this process have both superior lubricity and durability for ease of repeated and successive passes through tissue.
Ethicon, Inc.

Polyorganosiloxane compositions with metal based n-heterocyclic carbene condensation reaction catalysts and methods for the preparation thereof

A complex prepared by combining a metal compound and an n-heterocyclic carbene has catalytic activity for condensation reaction of polyorganosiloxane compositions. The composition includes the complex, a silanol functional compound having an average per molecule of one or more silicon bonded hydroxy moieties..
Dow Corning Corporation

Synthesis of molecular sieve ssz-41

A method is disclosed for synthesizing zincoaluminosilicate molecular sieve ssz-41 having high aluminum content from a combined source of silicon oxide and aluminum oxide selected from one or more a fau framework type zeolite and a colloidal aluminosilicate.. .
Chevron U.s.a. Inc.

Protective shield including hybrid nanofiber composite layers

A method of forming a protective shield to protect an aircraft component from emi or energy bursts includes the steps of combining a carbon-based or silicon-based preceramic polymer precursor and a metallic precursor to form a dope, processing the dope to provide a deposit that includes nano-structures, post-processing the deposit to provide a nano-structure material with a uniformly distributed base metal or metal compound, and forming a protective shield using the nano-structure material.. .
United Technologies Corporation

Silicon extrusion plant, silicon extrusion and silicon extrudate produced herewith

A silicon extrusion plant has a silicon extruder and a silicon feed device configured to load the silicon extruder. The silicon feed device has a feed hopper.
Raumedic Ag

Method for treating a component and heterogeneous composition

A method for treating a component and a heterogeneous composition are provided. The method includes the steps of brazing the component with a heterogeneous composition.
General Electric Company

Functionalized silicones for froth flotation

Improved sparge compositions for froth flotation separation, methods of using them, and uses thereof are described. The compositions are suitably used in the froth flotation of particulate material containing ultrafine particles, and are well suited to the froth flotation separation of finely comminuted poor (low-grade) ores.
Ecolab Usa Inc.

Porous carbon material composites and their production process, adsorbents, cosmetics, purification agents, and composite photocatalyst materials

A porous carbon material composite formed of a porous carbon material and a functional material and equipped with high functionality. The porous carbon material composite is formed of (a) a porous carbon material obtainable from a plant-derived material having a silicon (si) content of 5 wt % or higher as a raw material; and (b) a functional material adhered on the porous carbon material, and has a specific surface area of 10 m2/g or greater as determined by the nitrogen bet method and a pore volume of 0.1 cm3/g or greater as determined by the bjh method and mp method..
Sony Corporation

Stretchable attachment apparatus

A hospital bed rail attachment apparatus constructed of molded silicone or another form of elastomeric substance. An embodiment of the present disclosure includes an elongated member having a first appendage, a second appendage, and a central portion extending between the first appendage and the second appendage.
Clinical Biotechnology Research Institute At Rsfh

Low toxicity topical active agent delivery system

An active agent delivery composition is provided that allows topical delivery of active agents including vitamin a and its derivatives. A polyhalogenic vehicle serves as a coupler for an active agent and a silicone carrier so as to allow solubilization of active agents not normally miscible in silicones and providing a moisture maintaining composition..

Silicones for heat protection

Disclosed are compositions and methods for protecting hair against heat comprising applying to hair compositions containing silicone and silicone polyether copolymers with groups having amino, hydroxyl and/or alkoxy functionalities.. .
Dow Corning Corporation

Hair care formulation

A hair care formulation comprises a diester of a c8-c26 guerbet alcohol and a c4-c40 dicarboxylic acid. The diester can function as an active ingredient, particularly as a conditioning agent, especially on dry hair.
Croda International Plc

Silicon oxide-coated zinc oxide, composition containing silicon oxide-coated zinc oxide, and cosmetic product

Provided is silicon oxide-coated zinc oxide, which can inhibit a decrease in viscosity resulting from a carbomer in a case where the silicon oxide-coated zinc oxide is used in water-based materials, a composition containing silicon oxide-coated zinc oxide, and a cosmetic product. The silicon oxide-coated zinc oxide of the present invention contains zinc oxide particles and a silicon oxide coating on a surface of the zinc oxide particles, in which an electric conductivity of a water suspension of the silicon oxide-coated zinc oxide is 120 μs/cm or less..
Sumitomo Osaka Cement Co., Ltd.

Skin cleanser

A skin cleanser includes a surface, such as a silicone surface, with at least one textured portion for transmitting vibrational tapping to the skin. The skin cleanser includes at least one oscillating motor for generating the tapping motion to the skin.

Apparatus for use in a surgical procedure

A tapered sleeve is provided that includes a lubricating coating on an inner surface. An implant (e.g., a pre-filled silicon breast implant) is introduced into a large end of the sleeve and extruded into a surgical pocket of minimal access incision size through a small-sized end of the apparatus..
Keller Medical, Inc.

Implantation and antenna orientation of an implantable sensor

A sensor system including an implantable sensor and an external transceiver. Aspects of the sensor system may provide improved implantation and antenna orientation of the implanted sensor.
Senseonics, Incorporated

. .

Shin-etsu Chemical Co., Ltd.

. .

Shin-etsu Chemical Co., Ltd.

. .

Guided saw device

A guided surface acoustic wave (saw) device includes a substrate, a piezoelectric layer on the substrate, and a transducer on the piezoelectric layer. The substrate is silicon, and has a crystalline orientation defined by a first euler angle (ϕ), a second euler angle (θ), and a third euler angle (ψ).
Qorvo Us, Inc.

Silicon steel plate used to form a stator of a motor

A silicon steel plate used to form a stator of a motor is disclosed. The silicon steel plate includes a plurality of magnetic pole units.
Sunonwealth Electric Machine Industry Co., Ltd.

Ring-resonator-based laser with multiple wavelengths

An optical source includes semiconductor optical amplifiers, with a semiconductor other than silicon, which provide an optical gain medium. Moreover, a photonic chip in the optical source, which is optically coupled to the semiconductor optical amplifiers, includes ring resonators that selectively pass corresponding optical signals having carrier wavelengths provided by the semiconductor optical amplifiers, where a given ring resonator and a reflector on one of the semiconductor optical amplifier defines an optical cavity, and the ring resonators have different radii with associated resonance wavelengths corresponding to the carrier wavelengths.
Oracle International Corporation

Anode active material particles with artificial sel-layer by means of graft-to-polymerization

A method for manufacturing an anode active material and/or an anode for a lithium cell and/or lithium battery, in particular for a lithium-ion cell and/or lithium-ion battery, and/or for manufacturing such a lithium cell and/or lithium battery. In order to improve the cycle stability of the lithium cell and/or lithium battery, in the method at least one polymerizable monomer, and/or at least one polymer constituted from the at least one polymerizable monomer, is reacted with at least one silane compound having at least one polymerizable and/or polymerization-initiating and/or polymerization-controlling functional group, and anode active material particles, in particular silicon particles, are added.
Robert Bosch Gmbh

Composition for negative electrode active materials, negative electrode, nonaqueous electrolyte rechargeable battery, and producing composition for negative electrode active materials

A composition and a method for producing a composition are provided for negative electrode active materials, a negative electrode, and a nonaqueous electrolyte rechargeable battery, which are capable of improving cycle properties. The composition for negative electrode active materials includes a co-dispersion of a silica gel and a fine particulate carbon; and silicon particles contained in the co-dispersion, and so forth..
Fuji Silysia Chemical Ltd.

Negative electrode active material for lithium ion secondary batteries, and lithium ion secondary battery

The objective of the present invention is to provide a negative electrode active material for lithium ion secondary batteries, which has high capacity and a long service life by solving the aforementioned problem. A negative electrode active material for lithium ion secondary batteries, which comprises scale-like silicon particles, and wherein the surface of each scale-like silicon particle is covered with a carbon layer..
Hitachi, Ltd.

Negative electrode, battery, battery pack, electronic apparatus, electrically driven vehicle, electrical storage device, and electric power system

Provided is a battery including a positive electrode, a negative electrode, and an electrolytic solution. The negative electrode includes a negative electrode active material layer including a negative electrode active material and a binding agent.
Sony Corporation

Negative electrode active material, producing a negative electrode active material, and lithium ion secondary battery

The present invention is a negative electrode active material for a negative electrode active material layer of a lithium ion secondary battery, wherein: the negative electrode active material comprises silicon-based material consisting of siox (0.5≤x≤1.6); and the negative electrode active material has two or more peaks in a region of a bond energy ranging from 520 ev to 537 ev in an o 1s peak shape given in an x-ray photoelectron spectroscopy. As a result, it is possible to provide a negative electrode active material in which a battery capacity can be increased and cycle characteristics and initial charge/discharge characteristics can be improved when used as a negative electrode active material for a lithium ion secondary battery..
Shin-etsu Chemical Co., Ltd.

Multilayer diamond display system and method

Disclosed herein is a transparent glass system that includes an optical grade silicon substrate, a transparent substrate layer; a titanium dioxide transparent layer, the transparent layer having an index of refraction of 2.35 or greater; and a polycrystalline diamond layer, wherein the transparent layer is between the substrate layer and the polycrystalline diamond layer.. .

Low power barrier modulated cell for storage class memory

Systems and methods for providing a barrier modulated cell (bmc) structure that may comprise a reversible resistance-switching memory element within a memory array are described. The bmc structure may include a barrier layer comprising a layer of amorphous germanium or amorphous silicon germanium paired with a conductive metal oxide, such as titanium dioxide (tio2), strontium titanate (srtio3), or a binary metal oxide.
Sandisk Technologies Llc

Led fabrication using high-refractive-index adhesives

Silicone-containing adhesive layer formed by cyclic ring-opening polymerization and comprising amounts of an organic base and bonding a wavelength converting layer to a thickness of sapphire in a light-emitting diode (led) apparatus. Methods enabling its uninhibited curing so as to achieve contaminant-free and debris-free adhesion between surfaces.
Lumileds Llc

Led device, led module and ultraviolet light emitting device

An led device is provided which includes a substrate, an led element disposed on the substrate, an inorganic glass molded body disposed at a position where all or a part of the light which is emitted from the led element passes through, a first bonding portion that is provided in contact with the substrate and bonds the substrate and the inorganic glass molded body, and a second bonding portion provided between the led element and the inorganic glass molded body. The led element is shielded from the outside air by the substrate, the inorganic glass molded body and the first bonding portion.
Sumitomo Chemical Company, Limited

Display device

A display device is provided. The display device includes a substrate, a first transistor, and a light emitting diode.
Innolux Corporation

Tandem solar cell and manufacturing the same

The present disclosure relates to a tandem solar cell and a method of manufacturing the same, and more particularly, to a tandem solar cell having a perovskite solar cell stacked on and bonded to a silicon solar cell and a method of manufacturing the same. According to the present disclosure, a tandem solar cell embodied by using a homojunction silicon solar cell is provided with a first passivation pattern so that a part of an emitter layer under the first passivation pattern is exposed, thereby protecting, by the first passivation pattern, the emitter layer during high temperature firing for forming a second electrode, reducing surface defects of the emitter layer, and reducing a problem in that characteristics of the perovskite solar cell are degraded..
Lg Electronics Inc.

High electron mobility transistors with localized sub-fin isolation

Crystalline heterostructures including an elevated fin structure extending from a sub-fin structure over a substrate. Devices, such as iii-v transistors, may be formed on the raised fin structures while silicon-based devices (e.g., transistors) may be formed in other regions of the silicon substrate.
Intel Corporation

Semiconductor device and manufacturing semiconductor device

A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film.
Semiconductor Energy Laboratory Co., Ltd.

Sige source/drain structure and preparation method thereof

A structure of sige source/drain and a preparation method thereof are disclosed in the present invention. Firstly, providing a semiconductor single crystal silicon substrate.

Spacer formation in vertical field effect transistors

Embodiments of the present invention provide systems and methods for generating oxide spacers in a vertical field transistor. The fin of the channel facilitates the electrical current flowing between the source terminal and the drain terminal.
International Business Machines Corporation

Self-aligned silicon germanium finfet with relaxed channel region

A self-aligned sige finfet device features a relaxed channel region having a high germanium concentration. Instead of first introducing germanium into the channel and then attempting to relax the resulting strained film, a relaxed channel is formed initially to accept the germanium.
Stmicroelectronics, Inc.

High-electron-mobility transistor with buried interconnect

A high-electron-mobility transistor (hemt) includes a substrate layer of silicon, a first contact disposed on a first surface of the substrate layer, and a number of layers disposed on a second surface of the substrate layer opposite the first surface. A second contact and a gate contact are disposed on those layers.
Vishay-siliconix

High-electron-mobility transistor devices

A device includes a first high electronic mobility transistor (hemt) and a second hemt. The first hemt includes a first gate, a source coupled to the first gate, and a drain coupled to the first gate.
Vishay-siliconix

Semiconductor device and manufacturing a semiconductor device

A semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a silicon carbide semiconductor substrate of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type and connected to the first semiconductor region, a first electrode forming a schottky-contact with the first semiconductor layer and the first semiconductor region, and a second electrode forming an ohmic contact with the second semiconductor region. The second electrode has a ti—al alloy layer on a surface in contact with the first electrode.
Fuji Electric Co., Ltd.

Image sensing device

The image sensing device includes a semiconductor substrate, an interconnection layer, a radiation-sensing region and an isolation structure. The semiconductor substrate has a front surface and a back surface.
Taiwan Semiconductor Manufacturing Co., Ltd.

Semiconductor device, manufacturing semiconductor device, and display unit

A semiconductor device includes a substrate. The semiconductor device further includes a first transistor.
Joled Inc.

Display device

A display device is disclosed, which includes: a first substrate; a first transistor disposed over the first substrate, wherein the first transistor includes an oxide semiconductor layer; and a second transistor disposed over the first substrate, wherein the second transistor includes a silicon semiconductor layer, wherein the oxide semiconductor layer includes indium, gallium, and oxygen; and a ratio of an atomic percentage of oxygen to a sum of atomic percentages of indium and gallium in the oxide semiconductor layer is greater than or equal to 1 and less than or equal to 3.. .
Innolux Corporation

Display device

A display device is disclosed, which includes: a substrate having a display region and a peripheral region adjacent to the display region; a first transistor disposed on the display region and comprising a first channel layer, wherein the first channel layer includes an oxide semiconductor layer; and a second transistor disposed on the peripheral region and comprising a second channel layer, wherein the second channel layer includes a silicon semiconductor layer. Herein, a first ratio, which is a ratio of a first channel width of the first channel layer to the first channel length thereof, is greater than or equal to 0.4 and less than or equal to 4.5; and a second ratio, which is a ratio of a second channel width of the second channel layer to a second channel length thereof, is greater than or equal to 0.05 and less than or equal to 0.8..
Innolux Corporation

Semiconductor memory devices

A semiconductor memory device includes a substrate having an active region, word lines extending across the active region, a bit line on the active region between the word lines, a bit line node contact between the bit line and the active region, and a storage node contact on an end portion of the active region, wherein one or more of the bit line node contact or the storage node contact include silicon germanium.. .
Samsung Electronics Co., Ltd.

Capacitor mounting structure

A mounting structure includes a silicon die, an interposer, a substrate, and a capacitor. The capacitor includes a multilayer body, a first outer electrode provided on one end surface of the multilayer body, a second outer electrode provided on another end surface of the multilayer body, and a third outer electrode provided on side surfaces of the multilayer body, and a portion of the capacitor at the first outer electrode side is embedded within the interposer.
Murata Manufacturing Co., Ltd.

Integrated circuit with integrally formed micro-channel oscillating heat pipe

A miniaturized oscillating heat pipe (ohp) embedded within an integrated circuit (ic) is provided. The miniaturized oscillating heat pipe (ohp) integrally formed within an integrated circuit (ic) is fabricated to form a monolithic ic device using silicon (or similar future semiconductors) fabrication techniques.
Thermavant Technologies, Llc

Through-silicon via based semiconductor package

Provided is a semiconductor package. The semiconductor package comprises: a device substrate having a device pattern formed thereon; a cap substrate overlying the device substrate and comprising a first cavity area; a base substrate underlying the device substrate and comprising a second cavity area formed in the position corresponding to the first cavity area and at least one first through-silicon via that outputs, to the outside, an electrical signal provided from the device pattern or transmits, to the device pattern, an electrical signal provided from the outside; and a circuit substrate underlying the base substrate and electrically connected with the first through-silicon via to process an electrical signal for the device pattern..
Shin Sung C&t Co., Ltd.

High resistivity silicon-on-insulator structure and manufacture thereof

A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.. .
Sunedison Semiconductor Limited (uen201334164h)

Apparatus for achieving ultra-high selectivity while etching silicon nitride

Apparatuses for processing substrates are provided herein. Apparatuses include a plasma etch chamber having a showerhead and pedestal for holding a substrate having silicon nitride, at least one outlet for coupling to a vacuum, a solid non-functional silicon source, and a plasma generator.
Lam Research Corporation

Method of smoothing a surface

According to the invention there is provided a method of smoothing a surface of a silicon substrate comprising the steps of: providing a silicon substrate having a backside surface, wherein the silicon substrate has been ground to leave the backside surface with an associated roughness; and smoothing the backside surface of the silicon substrate using a plasma etch process; in which the plasma etch process comprises the steps of performing a first plasma etch step which forms a plurality of protrusions that upstand from the backside surface; and performing a second plasma etch step which at least partially etches the protrusions to provide a smoothed backside surface which exhibits specular reflection.. .
Spts Technologies Limited

Deposition of metal films

Methods to selectively deposit titanium-containing films on silicon-containing surfaces in high aspect ratio features of substrates comprise plasma-enhanced chemical vapor deposition (pecvd) process at a plasma powers in the range of about 1 to less than about 700 mwatts/cm2 and frequencies in the range of about 10 khz to about 50 mhz. The titanium films may be selectively deposited with a selectivity in the range of at least about 1.3:1 metallic silicon surfaces relative to silicon dioxide surfaces..
Applied Materials, Inc.

Parasitic channel mitigation via back side implantation

Iii-nitride materials are generally described herein, including material structures comprising iii-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates..
Macom Technology Solutions Holdings, Inc.

Method of processing target object

A controllability of a size of a mask can be improved in a multi-patterning method. A process of forming a silicon oxide film on a first mask and an antireflection film is performed.
Tokyo Electron Limited

Soft landing nanolaminates for advanced patterning

Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (hfrf) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high hfrf plasma power..
Novellus Systems, Inc.

Method to enhance growth rate for selective epitaxial growth

Embodiments of the present disclosure generally relate to methods for forming a doped silicon epitaxial layer on semiconductor devices at increased pressure and reduced temperature. In one embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of about 550 degrees celsius to about 800 degrees celsius, introducing into the processing chamber a silicon source comprising trichlorosilane (tcs), a phosphorus source, and a gas comprising a halogen, and depositing a silicon containing epitaxial layer comprising phosphorus on the substrate, the silicon containing epitaxial layer having a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, wherein the silicon containing epitaxial layer is deposited at a chamber pressure of about 150 torr or greater..
Applied Materials, Inc.

High-k gate dielectrics on 2d substrates, inert surfaces, and 3d materials

A method for forming a high-k oxide includes forming a nanofog of al2o3 nanoparticles and conducting subsequent ald deposition of a dielectric on the nanofog. A nanofog oxide is adhered to an inert 2d or 3d surface, the nano oxide consisting essentially of sub 1 nm al2o3 nanoparticles.
The Regents Of The University Of California

Etching method and plasma processing apparatus

An etching method is provided for processing a substrate that includes a first region having an insulating film arranged on a silicon layer and a second region having the insulating film arranged on a metal layer. The etching method includes a first step of etching the insulating film into a predetermined pattern using a plasma generated from a first gas until the silicon layer and the metal layer are exposed, and a second step of further etching the silicon layer after the first step using a plasma generated from a second gas including a bromide-containing gas..
Tokyo Electron Limited

Radio-frequency identification device for a tubular element to be identified in a constrained environment

A radio-frequency identification device for identifying a tubular element is provided that includes a radio-frequency identification chip connected to at least one antenna having two conductive strands and a flexible envelope enveloping the radio-frequency identification chip and strands. The envelope is a silicone material and includes a central portion overmolding the radio-frequency identification chip, and two strips extend on either side of the central portion and each strip overmolds at least one strand.
Systemes Et Technologies Identification (stid)

Post-silicon validation and debug using symbolic quick error detection

Disclosed are improved methods and structures for verifying integrated circuits and in particular systems-on-a-chip constructed therefrom. We call methods and structures according to the present disclosure symbolic quick error detection or symbolic qed, illustrative characteristics of symbolic qed include: 1) it is applicable to any system-on-chip (soc) design as long as it contains at least one programmable processor; 2) it is broadly applicable for logic bugs inside processor cores, accelerators, and uncore components; 3) it does not require failure reproduction; 4) it does not require human intervention during bug localization; 5) it does not require trace buffers, 6) it does not require assertions; and 7) it uses hardware structures called “change detectors” which introduce only a small area overhead.
New York University

Low power tunable reference current generator

An improved reference current generator for use in an integrated circuit. A voltage difference generator generates two voltages that are separated by a relatively small electrical potential.
Suite 200

Liquid crystal device, electronic apparatus, manufacturing liquid crystal device, mother substrate for liquid cystal device, and manufacturing mother substrate for liquid crystal device

A liquid crystal device includes an elemental substrate provided with a silicon oxide alignment layer on the front surface side thereof. Silanol groups of the alignment layer are bound to an organic silane polymer layer by silane coupling treatment.
Seiko Epson Corporation

Nose bracket structure for glasses

A nose bracket structure for glasses contains: a lens assembly (10) and a supporter (20). The lens assembly (10) includes a holding extension (11), a first fastener (12), a first retaining portion (13), and two locking segments (14).
Gem Optical Co., Ltd.

Infrared optical system, imaging optical device, and digital appliance

This infrared optical system using the wavelength range of 3 to 5 μm comprises, in the order from an object side, a first lens having a negative power and formed with a convex meniscus toward an object, a second lens that is convex on both sides, and a cold aperture. A bandpass filter is provided between the second lens and the image surface.
Konica Minolta, Inc.

Method and system for partial integration of wavelength division multiplexing and bi-directional solutions

Methods and systems for partial integration of wavelength division multiplexing and bi-directional solutions are disclosed and may include, an optical transceiver on a silicon photonics integrated circuit coupled to a planar lightwave circuit (plc). The silicon photonics integrated circuit may include a first modulator and first light source that operates at a first wavelength and a second modulator and second light source that operates at a second wavelength.
Luxtera, Inc.

Digital silicon photomultiplier for tof-pet

A radiation detector includes an array of detector pixels each including an array of detector cells. Each detector cell includes a photodiode biased in a breakdown region and digital circuitry coupled with the photodiode and configured to output a first digital value in a quiescent state and a second digital value responsive to photon detection by the photodiode.
Koninklijke Philips N.v.

Polarization sensitive optical coherence tomography

This disclosure relates to an oct apparatus configured to generate to electromagnetic (e.g., optical) signals having two different polarization states. Two or more silicon optical amplifiers (soas) can be configured to maintain a respective polarization state in an optical input signal provided from a light source (e.g., a broadband light source).
Case Western Reserve University

Silicone composition for release paper or release film, release paper, and release film

In a silicone composition for release paper or a release film cured by additive reaction, an organopolysiloxane containing an alkenyl group having a terminal unsaturated bond is used as a base polymer, and a specific amount of an organopolysiloxane that has a lower molecular weight than the base polymer and that contains an alkenyl group having a terminal unsaturated bond is mixed with the base polymer.. .

Pile fabric and manufacturing same

A pile fabric includes ground yarns constituting a ground structure; pile fibers that are tangled with the ground yarns, the pile fibers including portions standing on a front surface side of the ground structure; and an organically-modified silicone-based softener adhered to the pile fibers located on a back surface side of the pile fabric. The pile fibers include at least one selected from the group consisting of acrylic fibers and modacrylic fibers, and have a softening point lower than a softening point of the ground yarns.
Kaneka Corporation

Metal oxide film formation method

In a metal oxide film formation method of the present invention, the following steps are performed. In a solution vessel, a raw-material solution including aluminum as a metallic element is turned into a mist so that a raw-material solution mist is obtained.
Kochi Prefectural Public University Corporation

Ecae materials for high strength aluminum alloys

A method of forming a high strength aluminum alloy. The method comprises subjecting an aluminum material containing at least one of magnesium, manganese, silicon, copper, and zinc at a concentration of at least 0.1% by weight to an equal channel angular extrusion (ecae) process.
Honeywell International Inc.

Lighting devices with prescribed colour emission

Optical conversion layers based on semiconductor nanoparticles for use in lighting devices, and lighting devices including same. In various embodiments, spherical core/shell seeded nanoparticles (snps) or nanorod seeded nanoparticles (rsnps) are used to form conversion layers with superior combinations of high optical density (od), low re-absorbance and small fret.
Qlight Nanotech Ltd.

Electrostatic ink compositions

Herein is disclosed an electrostatic ink composition. In some examples, the electrostatic ink compositions comprise: a carrier liquid; a first resin; and a fluorescent pigment.
Hp Indigo B.v.

Inkjet recording ink and recorded matter

An inkjet recording ink is used for an inkjet recording device that includes a silicone rubber having a solubility parameter at 25° c. Of 6 to 8 as a member with which an ink comes in contact, the inkjet recording ink including water, a disperse dye, and an anionic surfactant, the content x (mass %) of the disperse dye and the content y (mass %) of the anionic surfactant in the inkjet recording ink satisfying the relationship “y/x≥0.7”..
Seiko Epson Corporation

Multifunctional graphene-silicone elastomer nanocomposite, making the same, and uses thereof

A nanocomposite composition having a silicone elastomer matrix having therein a filler loading of greater than 0.05 wt %, based on total nanocomposite weight, wherein the filler is functional graphene sheets (fgs) having a surface area of from 300 m2/g to 2630 m2/g; and a method for producing the nanocomposite and uses thereof.. .
The Trustees Of Princeton University

Condensation-curable silicone resin composition sheet, manufacturing condensation-curable silicone resin composition sheet, and manufacturing light-emitting apparatus

(2) in an amount of 5 to 100 parts by mass based on 100 parts by mass of the component (a). This condensation-curable silicone resin composition sheet is easy to be handled and has high heat resistance and ultraviolet light resistance while being excel in curing characteristics..

Organosilicon compounds having amino acid moieties, and process for preparation thereof

The invention provides a process for preparing organosilicon compounds (o) which contain free amino acid moieties and contain at least one unit of the general formula (i) and no unit or at least one unit of the general formula (ii), r1b(x)csio[4−(b+c)]/2 (i), r2asio(4−a)/2 (ii), in which epoxy-functional organosilicon compounds composed of at least one unit of the general formula (iii) and no unit or at least one unit of the general formula (ii), r1b(z)csio[4−(b+c)]/2 (iii), r2asio(4−a)/2 (ii), where z has the definition (formula a), are reacted with unprotected amino acids of the general formula (iv): h—nr7—(ch2)f—cr8r9—cooh, in the presence of aliphatic alcohols, where r1, r2, r4, r5, r6, r7, r8, r9, x, z, y, a, b, c, e and f have the definitions given in claim 1, the organosilicon compounds (o) which contain free amino acid moieties and are prepayable by the process, and uses for the organosilicon compounds (o).. .
Wacker Chemie Ag

Method of making an alumina-silicate oxynitride and cubic boron nitride ceramic composite

A method for producing a composite of cubic boron nitride dispersed in a sialon ceramic. This method involves mixing silicon nitride nanoparticles, aluminum nitride nanoparticles, silica nanoparticles, calcium oxide nanoparticles, and cubic boron nitride microparticles to produce a mixture.
King Fahd University Of Petroleum And Minerals

Method for manufacturing substrate

A method for manufacturing a substrate is disclosed. The method comprises the following steps: step one, depositing an amorphous silicon layer on a base material; step two, depositing a silicon dioxide layer with a first thickness on the amorphous silicon layer; and step three, etching the silicon dioxide layer until a thickness thereof is reduced to a second thickness.
Wuhan China Star Optoelectronics Technology Co. Ltd.

Connector for actuating delivering taps

A connector for delivering taps is described, comprising: a pouring element that connects a tube that takes liquid from the tap to a dispensing device; a valve made of silicone, that performs static and dynamic seals inside the connector; a body, that contains the tap and is coupled with the pouring element; at least one lever, that is connected to the body and makes the tap open through a rotation around a fulcrum obtained on the body; and a small blocking plug, connected to the lever and adapted to engage the tap in an opening and continuous delivery position thereof; the small plug is made in a single piece with a metallic spring having a flexible shape for inserting and fastening it to the lever; the spring is adapted, upon opening the connector, to make the small plug go back to its opening position.. .
Vitop Moulding S.r.l.

Silicon steel composite for low denomination coin

An alloy includes: steel; manganese; aluminum; and silicon in an amount such that the alloy has an electrical conductivity from 2% iacs to 6% iacs measured in accordance with astm e1004-09 (2009).. .
Government Of The United States Of America, As Represented By The Secretary Of Treasury

Method for deterministic finishing of a chuck surface

In a deterministic setting for finishing the support surface of a chuck such as a wafer chuck, the treatment tool may have a contacting surface shaped as a ring, annulus, or toroid, or at least such will be the form of contact when the treatment tool is brought into contact with a flat surface. The treatment tool may have about the same hardness as the work piece (e.g., the wafer chuck) that is being finished.
M Cubed Technologies, Inc.

Compositions and methods for administering antibodies

The present invention relates to a drug delivery system and uses thereof. Specifically, a system that can be used to deliver therapeutic proteins, including antibodies, to proteolytic environments is disclosed.
University Of South Australia

A photo-protective personal care composition

The invention relates to a photo-protective personal care composition, especially to one that provides enhanced stability of a uva sunscreen of the dibenzoylmethane class when a uvb sunscreen of the cinnamic acid class is also present. This has been achieved by entrapping the uva sunscreen in a matrix comprising a specific silica and a specific silicone and combining this with a uvb sunscreen being entrapped in a gel made of a silicone elastomer and a volatile silicone..
Conopco, Inc., D/b/a Unilever

Fluid dispensing brush

A brush comprising a housing having an opening at which there is a pad and bristles. The housing defines an interior space and a handle.
Shordee Products Llc

Overmold direct attach sole

Joining a bottom unit, such as an athletic shoe sole, with an upper is achieved with an over molding process. A midsole core may be formed with a direct attach to an underfoot portion of the upper.
Nike, Inc.

. .

Elastic wave device, high-frequency front-end circuit, and communication device

An elastic wave device includes a support substrate made of silicon, a piezoelectric film disposed directly or indirectly on the support substrate, and an interdigital transducer electrode disposed on one surface of the piezoelectric film. A higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity vsi=(v1)1/2 of propagation through silicon or higher than the acoustic velocity vsi, where vsi is specified by v1 among solutions v1, v2, and v3 with respect to x derived from ax3+bx2+cx+d=0..
Murata Manufacturing Co., Ltd.

Replenished negative electrodes for secondary batteries

A method is provided for activating a secondary battery having a negative electrode, a positive electrode, and a microporous separator between the negative and positive electrodes permeated with carrier-ion containing electrolyte, the negative electrode having anodically active silicon or an alloy thereof. The method includes transferring carrier ions from the positive electrode to the negative electrode to at least partially charge the secondary battery, and transferring carrier ions from an auxiliary electrode to the positive electrode, to provide the secondary battery with a positive electrode end of discharge voltage vpos,eod and a negative electrode end of discharge voltage vneg,eod when the cell is at a predefined vcell,eod value, the value of vpos,eod corresponding to a voltage at which the state of charge of the positive electrode is at least 95% of its coulombic capacity and vneg,eod is at least 0.4 v (vs li) but less than 0.9 v (vs li)..
Enovix Corporation

Anode active material and a lithium secondary battery including the same

An anode active material for a lithium secondary battery, the anode active material including a metal silicide core, a silicon shell disposed on the core, and a metal nitride disposed on a surface of the silicon shell opposite the core.. .
Samsung Electronics Co., Ltd.

Negative electrode active material for lithium secondary battery and preparing the same

The present specification relates to a negative electrode active material which includes a silicon-based composite represented by sioa (0≤a<1), and a carbon coating layer distributed on a surface of the silicon-based composite, and which has a bimodal pore structure including nanopores and mesopores. In a lithium secondary battery including the negative electrode active material, an oxygen content in the silicon-based composite can be controlled to improve initial efficiency and capacity characteristics, and a specific surface area can also be controlled, and thus a side reaction with electrolyte can be reduced..
Lg Chem, Ltd.

Negative electrode active material for non-aqueous electrolyte secondary battery, negative electrode for non-aqueous electrolyte secondary battery, non-aqueous electrolyte secondary battery, and producing negative electrode active material particles

A negative electrode active material for a non-aqueous electrolyte secondary battery, including: negative electrode active material particles that contain a silicon compound containing a li compound; wherein the silicon compound is at least partially coated with a carbon coating, the negative electrode active material particles are coated with a coating composed of at least one of a compound having a boron-fluorine bond and a compound having a phosphorous-fluorine bond on at least a part of the surface of either or both of the silicon compound and the carbon coating, the negative electrode active material particles contain a boron or a phosphorous element in a range of 10 to 10000 ppm by mass with respect to the total amount of negative electrode active material particles. This provides a negative electrode active material for a non-aqueous electrolyte secondary battery that can increase battery capacity and improve cycle performance..
Shin-etsu Chemical Co., Ltd.

Negative electrode active material for lithium secondary battery and preparing the same

The present specification relates to a negative electrode active material including an amorphous silicon-based composite represented by sioa (0<a<1); and a carbon coating layer distributed on a surface of the silicon-based composite, and provides a negative electrode active material in which the crystal growth of crystalline silicon in a silicon-based composite prepared by thermal reduction with a metal reducing agent is suppressed in a state where a carbon coating layer is formed, and the ratio of silicon in the composite is high, and a method of preparing the same.. .
Lg Chem, Ltd.

Thin-film transistor array panel

The present invention disclosure proposes a tft array panel includes a back-channel etching structure tft having a semiconductor layer made from a tin-silicon oxide, a source, and a drain. Both of the source and the drain are arranged on and contact the semiconductor layer.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Carbon-based interface for epitaxially grown source/drain transistor regions

Techniques are disclosed for forming p-mos transistors having one or more carbon-based interface layers between epitaxially grown s/d regions and the channel region. In some cases, the carbon-based interface layer(s) may comprise a single layer having a carbon content of greater than 20% carbon and a thickness of 0.5-8 nm.
Intel Corporation

Resistance reduction in transistors having epitaxially grown source/drain regions

Techniques are disclosed for resistance reduction in p-mos transistors having epitaxially grown boron-doped silicon germanium (sige:b) s/d regions. The techniques can include growing one or more interface layers between a silicon (si) channel region of the transistor and the sige:b replacement s/d regions.
Intel Corporation

Spacer formation in vertical field effect transistors

Embodiments of the present invention provide systems and methods for generating oxide spacers in a vertical field transistor. The fin of the channel facilitates the electrical current flowing between the source terminal and the drain terminal.
International Business Machines Corporation

Silicon carbide semiconductor device

A silicon carbide semiconductor device includes a first conductivity type silicon carbide substrate having an active region and a termination region surrounding the active region, a plurality of unit cells located in the active region, and a termination structure located in the termination region. Each unit cell is provided with a transistor structure.
Panasonic Intellectual Property Management Co., Ltd.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a non-volatile memory. The non-volatile memory includes a first dielectric layer disposed on a substrate, a floating gate disposed on the dielectric layer, a control gate, a second dielectric layer disposed between the floating gate and the control gate and having one of a silicon oxide layer, a silicon nitride layer and multilayers of silicon oxide and silicon nitride, and an erase gate and a select gate.
Taiwan Semiconductor Manufacturing Co., Ltd.

Semiconductor device and manufacture thereof

A semiconductor device and its manufacturing method are presented. The manufacturing method includes providing a semiconductor structure comprising a substrate, at least one source region on the substrate, an interlayer dielectric layer covering a portion of the source region and having a cavity on the source region, and a pseudo gate insulation layer at the bottom of the cavity covering a portion of the source region; forming a barrier layer in the cavity; forming a loss reduction region in the interlayer dielectric layer by conducting an ion implantation process comprising silicon ion or carbon ion; removing the barrier layer; removing the pseudo gate insulation layer to expose a portion of the source region; and forming a gate structure on the exposed portion of the source region.
Semiconductor Manufacturing International (shanghai) Corporation

Sub-fin sidewall passivation in replacement channel finfets

Techniques are disclosed for reducing off-state leakage of fin-based transistors through the use of a sub-fin passivation layer. In some cases, the techniques include forming sacrificial fins in a bulk silicon substrate and depositing and planarizing shallow trench isolation (sti) material, removing and replacing the sacrificial silicon fins with a replacement material (e.g., sige or iii-v material), removing at least a portion of the sti material to expose the sub-fin areas of the replacement fins, applying a passivating layer/treatment/agent to the exposed sub-fins, and re-depositing and planarizing additional sti material.
Intel Corporation

Semiconductor device and manufacturing semiconductor device

A semiconductor device has a silicon layer having a photoelectric conversion portion, a transfer electrode of a transfer portion disposed on the silicon layer, the transfer portion transferring a charge of the photoelectric conversion portion, and an insulator film having a first portion located between the transfer electrode and the silicon layer and a second portion located on the photoelectric conversion portion, the first portion and the second portion of the insulator film contain nitrogen, oxygen, and silicon, and the distance between the position where the nitrogen concentration shows the largest value in the second portion and the silicon layer is larger than the distance between the position where the nitrogen concentration shows the largest value in the first portion and the silicon layer.. .
Canon Kabushiki Kaisha

Three-dimensional memory device with discrete self-aligned charge storage elements and making thereof

A memory opening can be formed through an alternating stack of insulating layers and sacrificial material layers over a substrate. A material layer stack containing, from outside to inside, an aluminum oxide tunneling dielectric layer, a silicon-containing tunneling dielectric layer, and a vertical semiconductor channel is formed within the memory opening.
Sandisk Technologies Llc

Three dimensional integrated circuits employing thin film transistors

An integrated circuit which enables lower cost and improved features compared to standard crystalline silicon integrated circuits by utilizing thin film transistors (tfts) in 2d and 3d memory and logic devices, including nand flash memory and other nonvolatile memories such as rram, nram, mram, feram or pcram. By utilizing tfts, density is improved and die area and costs are reduced.
3b Technologies, Inc.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a non-volatile memory. The non-volatile memory includes a first dielectric layer disposed on a substrate, a floating gate disposed on the dielectric layer, a control gate.
Taiwan Semiconductor Manufacturing Co., Ltd.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a non-volatile memory. The non-volatile memory includes a first dielectric layer disposed on a substrate, a floating gate disposed on the dielectric layer, a control gate and a second dielectric layer disposed between the floating gate and the control gate.
Taiwan Semiconductor Manufacturing Co., Ltd.

Interconnection structures and fabrication methods thereof

A method for fabricating an interconnection structure includes providing a substrate, forming a dielectric layer on the substrate, forming a conductive structure in the dielectric layer, forming a cap layer doped with silicon on the conductive structure and the dielectric layer, and performing an annealing process on the conductive structure and the cap layer. During the annealing process, the silicon ions in the cap layer react with the material of the conductive structure and form chemical bonds.
Semiconductor Manufacturing International (beijing) Corporation

Method for manufacturing a semiconductor device having a dummy section

There is provided a semiconductor device comprising a semiconductor substrate having an active area in which a plurality of active elements are formed, and a non-active area excepting the active area; at least one electrode pad electrically connected to any of the active elements. At least one through silicon via electrode is formed, being electrically connected to the electrode pad by way of the non-active area.
Lapis Semiconductor Co., Ltd.

Semiconductor structure and fabrication method therefor

A method of fabricating a semiconductor structure. The method includes forming a sacrificial gate structure, depositing a dielectric material, and implanting the dielectric material using a silicon cluster gas.
Taiwan Semiconductor Manufacturing Company, Ltd.

Glass substrate, laminated substrate, laminated substrate manufacturing method, laminate, package, and glass substrate manufacturing method

A glass substrate is laminated with a substrate containing silicon to thereby form a laminated substrate. The glass substrate has a concave surface and a convex surface and has one or more marks that distinguish between the concave surface and the convex surface..
Asahi Glass Company, Limited

Method of fabricating diamond-semiconductor composite substrates

A method of fabricating a semiconductor-on-diamond composite substrate, the method comprising: (i) starting with a native semiconductor wafer comprising a native silicon carbidesubstrate on which a compound semiconductor is disposed; (ii) bonding a silicon carbide carrier substrate to the compound semiconductor; (iii) removing the native silicon carbide substrate; (iv) forming a nucleation layer over the compound semiconductor; (v) growing polycrystalline chemical vapour deposited (cvd) diamond on the nucleation layer to form a composite diamond-compound semiconductor-silicon carbide wafer, and (vi) removing the silicon carbide carrier substrate y laser lift-off to achieve a layered structure comprising the compound semiconductor bonded to the polycrystalline cvd diamond via the nucleation layer, wherein in step (ii) the silicon carbide carrier substrate is bonded to the compound semiconductor via a laser absorption material which absorbs laser light, wherein the laser has a coherence length shorter than a thickness of the silicon carbide carrier substrate.. .
Rfhic Corporation

Process for making multi-gate transistors and resulting structures

In a gate last metal gate process for forming a transistor, a dielectric layer is formed over an intermediate transistor structure, the intermediate structure including a dummy gate electrode, typically formed of polysilicon. Various processes, such as patterning the polysilicon, planarizing top layers of the structure, and the like can remove top portions of the dielectric layer, which can result in decreased control of gate height when a metal gate is formed in place of the dummy gate electrode, decreased control of fin height for finfets, and the like.
Taiwan Semiconductor Manufacturing Company, Ltd.

Method for generating vertical profiles in organic layer etches

A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1.
Lam Research Corporation

Methods for processing semiconductor wafers having a polycrystalline finish

A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. The silicon layer has a substantially uniform thickness.
Sunedison Semiconductor Limited

Substrate processing apparatus and heat shield plate

There is provided a substrate processing apparatus which includes: a process container configured to accommodate a substrate; a partition member disposed between plasma generated inside the process container and the substrate, the partition member configured to selectively transmit radicals in the plasma toward the substrate; and a heat shield plate disposed between the partition member and the substrate. The heat shield plate is disposed so as to face the substrate.
Tokyo Electron Limited

Electrodes for localized control facilitating the integration of porous silicon formed by galvanic etching

A method of manufacturing a porous silicon (psi) includes providing a semiconductor wafer; depositing a mask layer on a first side of the semiconductor wafer; patterning the mask layer to expose portions of semiconductor material of the semiconductor wafer; depositing a metal layer onto the patterned mask layer on a second side of the semiconductor wafer; and etching the semiconductor wafer where exposed by patterned portions of any of the mask layer and the metal layer thereby creating psi regions at a surface of the semiconductor wafer. The method may further include patterning the metal layer prior to etching to form at least one electrode.
The United States Government As Represented By The Secretary Of The Army

Semiconductor device and fabrication method therefor

A method of manufacturing a semiconductor structure includes depositing a silicon layer over a substrate, removing a portion of the silicon layer to form a gate stack, and performing a hydrogen treatment on the gate stack to repair a plurality of voids in the stack structure.. .
Taiwan Semiconductor Manufacturing Company, Ltd.

Laser annealing apparatus, and fabrication methods of polycrystalline silicon thin film and thin film transistor

A laser annealing apparatus, a fabrication method of a polysilicon thin film, and a fabrication method of a thin film transistor are provided. The laser annealing apparatus includes: a laser generator, an optical system and an annealing chamber.
Ordos Yuansheng Optoelectronics Co., Ltd.

Formation of silicon-containing thin films

Methods for depositing silicon-containing thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (peald) cycle including one or more deposition cycles including contacting the substrate with a silicon precursor and a second reactant that does not include oxygen.
Asm Ip Holding B.v.

Method of topologically restricted plasma-enhanced cyclic deposition

In an embodiment, a method for transferring a pattern constituted by vertical spacers arranged on a template with intervals to the template, includes depositing by plasma-enhanced cyclic deposition a layer as a spacer umbrella layer substantially only on a top surface of each vertical spacer made of silicon or metal oxide, wherein substantially no layer is deposited on sidewalls of the vertical spacers and on an exposed surface of the template, followed by transferring the pattern constituted by the vertical spacers to the template by anisotropic etching using the vertical spacers with the spacer umbrella layers.. .
Asm Ip Holding B.v.

Si precursors for deposition of sin at low temperatures

Methods and precursors for depositing silicon nitride films by atomic layer deposition (ald) are provided. In some embodiments the silicon precursors comprise an iodine ligand.
Asm Ip Holding B.v.

Metamaterial photocathode for detection and imaging of infrared radiation

Exemplary metamaterial photocathodes enable detection of light from visible through long wave infrared wavelengths. Metamaterial stacks, comprising gold, silicon, and cesium-oxide, coupled to a semiconductor allow hot electrons to efficiently enter a vacuum.
The United States Of America As Represented By The Secretary Of The Navy

Surface-treated copper foil, manufacturing method therefor, printed circuit board copper-clad laminate, and printed circuit board

There is provided a copper foil having a surface coating layer that can achieve a high bonding strength to a resin layer even if the copper foil has an extremely smooth surface such as one formed by vapor deposition, for example, sputtering and also has a desirable insulation resistance suitable for achieving a fine pitch in a printed wiring board. A surface-treated copper foil according to the present invention includes a copper foil and a silicon-based surface coating layer provided on at least one surface of the copper foil, the silicon-based surface coating layer being mainly composed of silicon (si).
Mitsui Mining & Smelting Co., Ltd.

Speed governor for timepiece

A governor includes a balance spring including a base member made of silicon, for example, and a balance wheel. The balance spring includes a coating film of dlc that is applied to a surface of the silicon base member to improve the strength of the balance spring.
Citizen Watch Co., Ltd.

Lithography process with enhanced etch selectivity

The present disclosure provides a method for lithography patterning. The method includes coating a bottom layer on a substrate, wherein the bottom layer includes a carbon-rich material; forming a middle layer on the bottom layer, wherein the middle layer has a composition such that its silicon concentration is enhanced to be greater than 42% in weight; coating a photosensitive layer on the middle layer; performing an exposing process to the photosensitive layer; and developing the photosensitive layer to form a patterned photosensitive layer..
Taiwan Semiconductor Manufacturing Co., Ltd.

Silicon compound and hard coating film and display device including the same

A liquid crystal display device includes a liquid crystal panel; and a backlight unit disposed at one side of the liquid crystal panel. The backlight unit includes a prism sheet, which comprises a base and a plurality of prism patterns arranged on the base and a binder and a silicon compound having adjacent siloxane moieties linked via a diselenide group, and a light source disposed at a lower portion of the prism sheet.
Lg Display Co., Ltd.

Manufacturing tft substrate and tft substrate manufactured by the manufacturing method thereof

The invention provides an array substrate and a manufacturing method thereof. The array substrate comprises a substrate body, a common electrode, a light shield layer, an insulating layer, a polycrystalline silicon layer, a gate insulating layer, a gate electrode, a medium layer and a source-drain electrode.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Electro-absorption modulator with local temperature control

Methods, apparatus, and systems are provided including an electro-absorption modulator (eam) with local temperature control for optical communication. One aspect provides an optical eam including a semiconductor portion configured to modulate light for transmission or reception of an optical signal.
Futurewei Technologies, Inc.

Eyeglasses temple

An eyeglasses temple includes a curved section and a support section coupled to the curved section. The curved section includes a metal member, upper and lower plastic members for wrapping the metal member, and a connector installed to an inner side of the support section and proximate to an eyeglasses frame.
Dongguan Zhongxin Rubber Products Co., Ltd.

Semiconductor device and manufacturing the same

An soi substrate is attracted to and detached from an electrostatic chuck included in a semiconductor manufacturing device without failures. A semiconductor device includes a semiconductor substrate made of silicon, a first insulating film formed on a main surface of the semiconductor substrate and configured to generate compression stress to silicon, a waveguide, made of silicon, formed on the first insulating film, and a first interlayer insulating film formed on the first insulating film so as to cover the waveguide.
Renesas Electronics Corporation

Adiabatic polarization rotator-splitter

Various polarization rotator splitter (prs) configurations are disclosed. In an example embodiment, a system includes a prs that includes a silicon nitride (sin) rib waveguide core that includes a rib and a ridge that extends vertically above the rib, the sin rib waveguide core having a total height hsin from a bottom of the rib to a top of the ridge, a rib height hrib from the bottom of the rib to a top of the rib, a rib width wrib, and a top width wsin of the ridge.
University Of Toronto

Silicon-germanium based optical filter

An optical filter may include a substrate. An optical filter may include a set of optical filter layers disposed onto the substrate.
Viavi Solutions Inc.

Optical member formed from silicon material and optical device comprising same

The objective of the present invention is to provide: an optical member which is formed from a silicon material having high infrared transmittance and high hardness; and an optical device which comprises such an optical member. The present invention provides: an optical member for transmitting infrared light, which is formed from a silicon material that has an oxygen concentration of 1.0×1017 atom/cm3 or less, while containing carbon at a concentration of from 1.0×1016 atom/cm3 to 8.0×1018 atom/cm3; and an optical device which comprises this optical member arranged in the optical path of infrared light..
Carlit Holdings Co., Ltd.

Electrical cell-substrate impedance sensor (ecis)

A method for detection and monitoring a spreading stage of a biological cell for cancer diagnosis is disclosed. The method includes steps of removing biological cell lines from a material; culturing the cell lines via maintaining the removed biological cell lines in an appropriate medium at a controlled set of conditions; seeding the cultured biological cells lines on silicon nanowire electrode arrays of an electrical cell-substrate impedance sensor (ecis); and measuring an electrical impedance of the seeded biological cell lines to detect and monitor a spreading state of the seeded biological cell lines for cancer diagnosis..

Low-profile efficient vehicular lighting modules

A vehicle lighting module includes a silicone lens having an input surface and an exit surface, and a light source. The lens defines a near-zero draft between the input surface and the exit surface.
Ford Global Technologies, Llc

Method for regenerating member within silicon single crystal pulling apparatus

In a regeneration method of the present invention, a member, to the surface of which silicon or the like adheres, is subjected to a heat treatment for at least two hours in an inert gas atmosphere at a pressure of 2.67 kpa or less so that the surface of the member is at a temperature at which siox and/or silicon metal adhering to the surface starts to sublimate or higher but less than a temperature at which the member starts thermal deformation and/or thermal alteration, thereby removing silicon or the like adhering to the surface of the member by means of sublimation.. .
Sumco Corporation

Methods for depositing flowable silicon containing films using hot wire chemical vapor deposition

In some embodiments, a method of processing a substrate disposed within a processing volume of a hot wire chemical vapor deposition (hwcvd) process chamber, includes: (a) providing a silicon containing precursor gas into the processing volume, the silicon containing precursor gas is provided into the processing volume from an inlet located a first distance above a surface of the substrate; (b) breaking hydrogen-silicon bonds within molecules of the silicon containing precursor via introduction of hydrogen radicals to the processing volume to deposit a flowable silicon containing layer atop the substrate, wherein the hydrogen radicals are formed by flowing a hydrogen containing gas over a plurality of wires disposed within the processing volume above the substrate and the inlet.. .
Applied Materials, Inc.

Nickel base casting alloy, casting, and manufacturing an impeller of a rotary machine

A nickel base casting alloy includes a composition, by weight percent: 19.0-22.5 chromium, 7.0-9.5 molybdenum, 2.75-4.0 niobium, 1.0-1.7 titanium, 0.35-1.0 manganese, 0.2-1.0 silicon, 0 - 0.03 carbon, 0-0.015 phosphorus, 0-0.01 sulfur, 0-0.35 aluminum, 0-13.25 iron, the balance being nickel and incidental impurities.. .
Sulzer Management Ag

Lead-free easy-cutting high-strength corrosion-resistant silicon-brass alloy and the preparation method and use thereof

The present invention relates to a lead-free easy-cutting high-strength corrosion-resistant silicon-brass alloy and the preparation method and use thereof. The mass percent composition of the alloy is: 56-60% cu, 38-42% zn, 0.003-0.01% b, 0.03-0.06% ti, and 1.0-1.5% si and 0.5-0.9% al or 0.5-0.8% si and 1-1.5% al, and the zinc equivalent of all components is between 48% and 50%.
Kaiping Freendo Sanitary Ware Co., Ltd.

Adhesive tape, which can be used in particular in a molding a body in a mold

Adhesive tape having a carrier material comprising the following layers: a textile composed of fibers having a softening point greater than or equal to 200° c., and coated with fluoropolymers or silicone polymers, to the top side of which textile a first film composed of fluoropolymers is applied over the whole surface and to the bottom side of which textile a second film is applied over the whole surface, wherein a self-adhesive mass is applied to one side of the carrier material.. .
Tesa Se

Abrasion resistant coating composition with inorganic metal oxides

The present technology provides a coating system including a curable silicone polymer and a catalyst, wherein the catalyst is selected from a super base, a salt of a super base, or a combination of two or more thereof.. .
Momentive Performance Materials Inc.

High temperature inks for electronic and aerospace applications

A printable material in ink form for forming electronic and structural components capable of high temperature performance may include a polymeric or oligomeric ceramic precursor. The material may also include a filler material and an optional liquid carrier.
United Technologies Corporation

Coating composition and optical member

There are provided a coating composition being possible to form a cured film which has excellent transparency and weather resistance, and especially hardness. A coating composition obtained by which a silicon-containing substance as a component (m) and a silica colloidal particle having a primary particle diameter of 2 to 80 nm as a component (s) are mixed, and then the component (m) is hydrolyzed, and the resulting aqueous solution is subsequently mixed with a colloidal particle (c) wherein a component (f) is a modified metal oxide colloidal particle (c) having a primary particle diameter of 2 to 100 nm, which includes a metal oxide colloidal particle (a) having a primary particle diameter of 2 to 60 nm as a core, whose surface is coated with a coating (b) formed of an acidic oxide colloidal particle..
Nissan Chemical Industries, Ltd.

Method for manufacturing liquid ejection head having a water-repellent layer at the ejection surface

A method for manufacturing a liquid ejection head includes forming a water-repellent layer containing a condensate of a first hydrolyzable silane compound and a second hydrolyzable silane compound, and irradiating the water-repellent layer with light including a light ray having a wavelength of less than 270 nm, wherein the first hydrolyzable silane compound contains a fluorine-containing group but no carbonyl group between the fluorine-containing group and a silicon atom, and the second hydrolyzable silane compound contains a fluorine-containing group and a carbonyl group between the fluorine-containing group and a silicon atom.. .
Canon Kabushiki Kaisha

Bulk polymerization of silicone-containing copolymers

Methods for preparing silicone-containing polymers by essentially adiabatic polymerization methods are disclosed. The polymerization system includes free radically polymerizable monomers.
3m Innovative Properties Company

Bulk polymerization of silicone-containing copolymers

Methods for preparing silicone-containing polymers by essentially adiabatic polymerization methods are disclosed. The polymerization system includes free radically polymerizable monomers.
3m Innovative Properties Company

Apparatus for conveying a product stream of chunk polysilicon or granular polysilicon

Foreign objects in a conveyed product stream of granular or chunk polysilicon is effected by identifying the foreign objects by eddy current sensors in the conveyor by which the granular or chunk polysilicon is being conveyed.. .
Wacker Chemie Ag

Packaging of polysilicon

Reduction of contamination and the proportion of fines fractions in the packaging of rod form polysilicon is achieved by directly filling a plastic bag with polysilicon from a cleaning bowl by a rotating motion which causes polysilicon chunks to slide into the bag.. .
Wacker Chemie Ag

Eco-pump type cosmetic container

The eco-pump type cosmetic container according to the present invention comprises: a container having a liquid cosmetic stored therein; a shoulder portion, which is fastened and fixed to the upper portion of the container and has a shoulder bush integrally formed at the center of the interior thereof so as to protrude upwards; an elastic member, which is fastened and fixed inside the shoulder portion, is made of a silicone rubber material having an elastic restoration force, and has a sheet at the center thereof so as to be in close contact with the top surface of the shoulder bush; and a pressing portion which is installed and fixed on the upper portion of the elastic member to pressurize the elastic member, in which the shoulder portion may have a guide surface along which the pressing portion is guided and moved, a double engaging projection which is fitted and fixed to a fixing protrusion formed on the pressing portion to be prevented from being separated to the outside, a fitting groove formed so that a connection projection of the container is inserted and fixed therein, a separation preventing protrusion formed on the lower portion of the guide surface so as to prevent the elastic member from being separated upward, and a discharge hole formed to penetrate from the bottom surface thereof to the upper portion thereof so that the liquid cosmetic, which is stored in the container, is discharged to the outside.. .

Method and device for milling and separation of solids and granular materials including metal containing materials as well as phytogenic materials with a high level of silicon in a controlled airflow

The invention relates to the method for milling and separation into fractions of solids and granular materials in a controlled airflow. The device for milling and separation of solids and granular materials consists of a round milling chamber with a system of pneumatic separation comprising of a vertical cylindrical body that has an uploading slot for solids and granular materials and unloading channels for the milled products of light, medium and coarse fractions.
Eco Tec Mineria Corp.

Method for fabricating a titanium-containing silicon oxide material with high thermal stability and applications of the same

The present invention discloses a method for fabricating a titanium-containing silicon oxide material with high thermal stability and applications of the same, wherein a titanium source, a silicon source, an alkaline source, a template molecule and a peroxide are formulated into an aqueous solution; the aqueous solution reacts to generate a solid product; the solid product is separated from the aqueous solution with a solid-liquid separation process and dried; the solid product is calcined to obtain a titanium-containing silicon oxide material with high specific surface area. The titanium-containing silicon oxide material fabricated by the present invention has high thermal stability.
Oriental Union Chemical Corp.

Nanoporous silicon nitride membranes, and methods for making and using such membranes

Provided are nanoporous silicon nitride membranes and methods of making such membranes. The membranes can be part of a monolithic structure or free-standing.
Simpore, Inc.

Cosmetic compositions containing silicones

A cosmetic composition comprising a cosmetically active ingredient in a cosmetically acceptable medium, wherein the cosmetic composition contains a silicone composition comprising (a) a hydrophobic organopolysiloxane fluid having a surface tension of from 15 to 40 mn/m and (b) a finely divided solid hydrophobic filler dispersed in the organopolysiloxane fluid (a).. .
Dow Corning Corporation

Micro-silicon microphone and fabrication method thereof

A micro-silicon microphone and a fabrication method thereof in the preset invention are to solve the technical problem that stress of the micro-silicon microphone influences sensitivity. The micro-silicon microphone in the present invention comprises a silicon substrate, an insulation layer and a vibration film layer sequentially disposed on the silicon substrate.
Memsensing Microsystems (suzhou, China) Co., Ltd.

Power gating circuit utilizing double-gate fully depleted silicon-on-insulator transistor

Combining the functionality of sleep transistors with logic devices in power-gating circuits by utilizing fully depleted silicon-on-insulator (fdsoi) transistors. In an embodiment, a back gate of a fdsoi transistor controls the threshold voltage to eliminate the need for standalone sleep transistors..
The Curators Of The University Of Missouri

Elastic wave device, high-frequency front end circuit, and communication apparatus

An elastic wave device includes a piezoelectric substrate, an idt electrode including a first electrode layer which is provided on the piezoelectric substrate and contains pt as a main component and a second electrode layer which is laminated on the first electrode layer and contains cu as a main component, and a dielectric film that is provided on the piezoelectric substrate and covers the idt electrode. The piezoelectric substrate is made of lithium niobate.
Murata Manufacturing Co., Ltd.

Single crystal acoustic resonator and bulk acoustic wave filter

A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices provided on a silicon and carbide bearing material, each having a first electrode member, a second electrode member, and an overlying passivation material.
Akoustis, Inc.

Hybrid switch for inverter of computed tomography system

An inverter for a computed tomography (ct) system is provided. The inverter includes a hybrid switch.
General Electric Company

Motor drive with silicon carbide mosfet switches

Motor drive power conversion systems, including a filter circuit with a single inductor and a capacitor for each input phase, an active rectifier with silicon carbide rectifier switching devices and no precharge circuitry, a dc bus circuit with a film dc bus capacitor, an inverter to drive a load, and a controller to operate the rectifier switching devices at a pwm rectifier switching frequency of 10 khz or more.. .
Rockwell Automation Technologies, Inc.

A novel induction servo motor with a constant-output- force or a constant-output-torque by using uniform magnetic fields

The present invention belongs to the technical field of alternating current induction servo motors, and particularly relates to a rotary-type induction servo motor with a constant-output-torque by using uniform magnetic fields and a linear-type induction servo motor with a constant-output-force by using uniform magnetic fields. The present invention has main features that the rotary-type induction servo motor or the linear-type induction servo motor is composed of n independent motor units; each independent motor unit has the same or similar structure, and is powered by single-phase alternating current; and the n independent motor units have an equal voltage magnitude of power supply, but voltage phases are different and form an arithmetic progression.

Porous silicon composite cluster structure, preparing the same, carbon composite using the same, and electrode, lithium battery, and device each including the same

A porous silicon composite including: a porous silicon composite cluster comprising a porous silicon composite secondary particle and a second carbon flake on at least one surface of the porous silicon composite secondary particle; and a carbonaceous layer on the porous silicon composite cluster, the carbonaceous layer comprising amorphous carbon, wherein the porous silicon composite secondary particle comprises an aggregate of two or more silicon primary particles, the two or more silicon primary particles comprise silicon, a silicon suboxide of the formula siox, wherein 0<x<2 on a surface of the silicon, and a first carbon flake on at least one surface of the silicon suboxide, the silicon suboxide is in a form of a film, a matrix, or a combination thereof, and the first carbon flake and the second carbon flake are each independently present in a form of a film, particles, a matrix, or a combination thereof. Also a method of preparing the porous silicon composite, a carbon composite, an electrode, and a device, each including the porous silicon composite, and a lithium battery including the electrode..
Samsung Sdi Co., Ltd.

Secondary battery-use anode and manufacturing the same, secondary battery and manufacturing the same, battery pack, electric vehicle, electric power storage system, electric power tool, and electronic apparatus

A secondary battery includes a cathode, an anode, and an electrolytic solution. The anode includes a first anode active material, a second anode active material, and an anode binder.
Sony Corporation

Organic electroluminescent materials and devices

This invention discloses novel compounds containing indolocarbazole and silicon core structures. These compounds can be used as hosts for oleds..
Universal Display Corporation

Method of forming resistive random access memory (rram) cells

A method of forming a memory device includes forming a first layer of conductive material having opposing upper and lower surfaces, forming a layer of amorphous silicon on the upper surface of the first layer of conductive material, stripping away the layer of amorphous silicon, wherein some of the amorphous silicon remains in the upper surface of the first layer of conductive material, forming a layer of transition metal oxide material on the upper surface of the first layer of conductive material, and forming a second layer of conductive material on the layer of transition metal oxide material. The method smoothes the upper surface of the bottom electrode, and also provides an bottom electrode upper surface with stable material that is hard to oxidize..
Silicon Storage Technology, Inc.

Variable resistance element and memory device

According to one embodiment, a variable resistance element includes first and second conductive layers and a first layer. The first conductive layer includes at least one of silver, copper, zinc, titanium, vanadium, chrome, manganese, iron, cobalt, nickel, tellurium, or bismuth.
Toshiba Memory Corporation

Techniques for integration of ge-rich p-mos source/drain

Techniques are disclosed for improved integration of germanium (ge)-rich p-mos source/drain contacts to, for example, reduce contact resistance. The techniques include depositing the p-type ge-rich layer directly on a silicon (si) surface in the contact trench location, because si surfaces are favorable for deposition of high quality conductive ge-rich materials.
Intel Corporation

Silicon-carbide trench gate mosfets and methods of manufacture

In a general aspect, an apparatus can include a semiconductor substrate, a drift region disposed in the semiconductor substrate; a body region disposed in the drift region and a source region disposed in the body region. The apparatus can also include a gate trench disposed in the semiconductor substrate.
Fairchild Semiconductor Corporation

Semiconductor device

A parasitic capacitance and a leak current in a nitride semiconductor device are reduced. For example, a 100 nm-thick buffer layer made of aln, a 2 μm-thick undoped gan layer, and 20 nm-thick undoped algan having an al composition ratio of 20% are epitaxially grown in this order on, for example, a substrate made of silicon, and a source electrode and a drain electrode are formed so as to be in ohmic contact with the undoped algan layer.
Panasonic Intellectual Property Management Co., Ltd.

Heteroepitaxial structures with high temperature stable substrate interface material

Crystalline heterostructures including an elevated crystalline structure extending from one or more trenches in a trench layer disposed over a crystalline substrate are described. In some embodiments, an interfacial layer is disposed over a silicon substrate surface.
Intel Corporation

Iii-v fin generation by lateral growth on silicon sidewall

A method comprises providing a structure defined by a silicon material on a buried oxide layer of a substrate; causing a nucleation of a iii-v material in a sidewall of the structure defined by the silicon material; adjusting a growth condition to facilitate a first growth rate of the iii-v material in directions along a surface of the sidewall and a second growth rate of the iii-v material in a direction laterally from the surface of the sidewall, wherein the second growth rate is less than the first growth rate; and processing the silicon material and the iii-v material to form a fin.. .
International Business Machines Corporation

Iii-v fin generation by lateral growth on silicon sidewall

A method comprises providing a structure defined by a silicon material on a buried oxide layer of a substrate; causing a nucleation of a iii-v material in a sidewall of the structure defined by the silicon material; adjusting a growth condition to facilitate a first growth rate of the iii-v material in directions along a surface of the sidewall and a second growth rate of the iii-v material in a direction laterally from the surface of the sidewall, wherein the second growth rate is less than the first growth rate; and processing the silicon material and the iii-v material to form a fin.. .
International Business Machines Corporation

Doped poly-silicon for polycmp planarity improvement

A method includes forming a polysilicon layer with an uneven upper surface over a first region and a second region of a substrate, doping a top portion of the polysilicon layer to change its removal rate, thereby forming a doped layer, and removing the doped layer in the first region to expose the polysilicon layer in the first region and leaving at least a portion of the doped layer in the second region. The method also includes removing the exposed polysilicon layer in the first region at a first removal rate and the doped layer in the second region at a second removal rate, the polysilicon layer in the second region being exposed after the doped layer in the second region is removed, and removing the polysilicon layer in the first region and the second region at a third removal rate and a fourth removal rate, respectively..
Taiwan Semiconductor Manufacturing Company, Ltd.

Thin film transistor, manufacturing the same, array substrate and display device

The present disclosure provides a thin film transistor, a method for manufacturing the same, an array substrate and a display device. The method for manufacturing a thin film transistor includes providing a substrate, forming a gate electrode, a gate insulating layer, an amorphous silicon material active layer and a cap layer on the substrate successively, wherein the cap layer is provided with a pattern on a side of the cap layer away from the amorphous silicon material active layer, and the pattern is composed of at least one groove along a length direction of the active layer and at least one groove along a width direction of the active layer, subjecting the amorphous silicon material active layer to laser annealing treatment to transform the amorphous silicon material active layer into a low temperature polycrystalline silicon material active layer, and removing the cap layer..
Boe Technology Group Co., Ltd.

Manufacturing semiconductor device

To improve the performance of a semiconductor device, there is provided with a manufacturing method of a semiconductor device including a step of removing an oxide film formed on the surface of a silicon carbide substrate including the inner wall of a trench, before forming the hydrogen annealing.. .
Renesas Electronics Corporation

Silicon on insulator device with partially recessed gate

Transistors having partially recessed gates are constructed on silicon-on-insulator (soi) semiconductor wafers provided with a buried oxide layer (box), for example, fd-soi and utbb devices. An epitaxially grown channel region relaxes constraints on the design of doped source and drain profiles.
Stmicroelectronics, Inc.

Fully substrate-isolated finfet transistor

Channel-to-substrate leakage in a finfet device is prevented by inserting an insulating layer between the semiconducting channel and the substrate during fabrication of the device. Similarly, source/drain-to-substrate leakage in a finfet device is prevented by isolating the source/drain regions from the substrate by inserting an insulating layer between the source/drain regions and the substrate.
Stmicroelectronics, Inc.

Solid-state imaging device, manufacturing solid-state imaging device, and electronic device

The present technology relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device, in which degradation of transfer characteristics of a photo diode can be suppressed. A floating diffusion is formed to reach the same depth as a layer of a photo diode formed on a silicon substrate, and a transfer transistor gate is formed therebetween.
Sony Semiconductor Solutions Corporation

Graded-semiconductor image sensor

A method of image sensor fabrication includes growing a semiconductor material having an illuminated surface and a non-illuminated surface, where the semiconductor material includes silicon and germanium and a germanium concentration increases in a direction of the non-illuminated surface. The method further includes forming a plurality of photodiodes, including a doped region and a heavily doped region, in the semiconductor material, where the doped region is of an opposite majority charge carrier type as the heavily doped region.
Omnivision Technologies, Inc.

Field-effect transistors with a buried body contact

Device structures for a field-effect transistor with a body contact and methods of forming such device structures. An opening is formed that extends through a device layer of a silicon-on-insulator (soi) substrate and into a buried oxide layer of the silicon-on-insulator substrate.
Globalfoundries Inc.

Fin field effect transistor (finfet) device structure

A fin field effect transistor (finfet) device structure and method for forming the same are provided. The finfet device structure includes a fin structure extending above a substrate.
Taiwan Semiconductor Manufacturing Co., Ltd.

Esd protection circuit

An electrostatic discharge (esd) protection circuit includes a silicon controlled rectifier (scr) configured to discharge an esd current applied to a power terminal to a ground terminal; and a p-channel metal oxide silicon (pmos) configured to have a triggering voltage lower than that of the scr, and to provide an esd current path between the power terminal and the ground terminal.. .
Samsung Electro-mechanics Co., Ltd.

Gan devices on engineered silicon substrates

Gan-on-silicon (gos) structures and techniques for accommodating and/or controlling stress/strain incurred during iii-n growth on a large diameter silicon substrate. A back-side of a silicon substrate may be processed to adapt substrates of standardized diameters and thicknesses to gos applications.
Intel Corporation

Methods for forming semiconductor devices and semiconductor device

A method for forming a semiconductor device and semiconductor device is disclosed. In one example, the method includes forming a silicone layer on a semiconductor die.
Infineon Technologies Austria Ag

Integrated circuit chip with power delivery network on the backside of the chip

An integrated circuit (ic) chip having power and ground rails incorporated in the front end of line (feol) is disclosed. In one aspect, these power and ground rails are at the same level as the active devices and are therefore buried deep in the ic, as seen from the front of the chip.
Imec Vzw

Robust through-silicon-via structure

Methods and apparatus entailing an interconnect structure comprising interconnect features disposed in dielectric material over a substrate. Each interconnect feature comprises an interconnect member and a via extending between the interconnect member and a conductive member formed within the dielectric material.
Taiwan Semiconductor Manufacturing Co., Ltd.

Co-integration of tensile silicon and compressive silicon germanium

Integrated circuits are disclosed in which the strain properties of adjacent pfets and nfets are independently adjustable. The pfets include compressive-strained sige on a silicon substrate, while the nfets include tensile-strained silicon on a strain-relaxed sige substrate.
Stmicroelectronics, Inc.

Method for producing soi wafer

A method for producing a soi wafer that includes implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer formed of a silicon single crystal to form an ion implanted layer, bonding the ion-implanted surface of the bond wafer to a surface of a base wafer formed of a silicon single crystal through a silicon oxide film formed on the base wafer surface, delaminating the bond wafer at the ion implanted layer by performing delamination heat treatment to fabricate a soi wafer having a buried oxide film layer and a soi layer on the base wafer, and performing flattening heat treatment on the soi wafer in an atmosphere containing argon gas.. .
Shin-etsu Handotai Co., Ltd.

Methods of forming patterns using imprint process

A method for forming patterns is provided. The method includes forming a resist layer on a substrate, imprinting a convex pattern and a concave pattern on the resist layer using a template, forming a silicon diffusion layer containing silicon containing diffusion species in an upper portion of the convex pattern, and selectively removing a recessed portion of the resist layer under the concave pattern using the silicon diffusion layer as an etch mask..
Sk Hynix Inc.

Dopant introduction method and thermal treatment method

A psg film, which is a silicon dioxide thin film containing phosphorus as a dopant, is formed on the surface of a semiconductor wafer. The semiconductor wafer having the psg film formed thereon is kept at a predetermined heating temperature by light radiation from halogen lamps in the atmosphere containing hydrogen for 1 second or longer, so that the dopant is diffused from the psg film into the surface of the semiconductor wafer.
Screen Holdings Co., Ltd.

Method of forming silicon-containing film

A method of forming a silicon-containing film includes: an adsorption step of supplying a silicon-containing gas represented by a general formula xsicl3 (wherein x is an element whose bonding energy with si is smaller than bonding energy of a si—cl bond) into a processing chamber accommodating substrates to cause the silicon-containing gas to be adsorbed to a surface of each of the substrates; and a reaction step of supplying a reaction gas reacting with the silicon-containing gas into the processing chamber to cause the silicon-containing gas adsorbed to the surface of each of the substrates to react with the reaction gas.. .
Tokyo Electron Limited

Semiconductor structures comprising silicon nitride and related methods

Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° c.
Micron Technology, Inc.

Systems and methods for detection and quantification of selenium and silicon in samples

The present disclosure provides methods and systems for improved detection and/or quantification of selenium (se) and/or silicon (si) in samples. In certain embodiment, the methods and systems feature the use of carbon dioxide (co2) as a reaction gas in a reaction cell chamber, such as a dynamic reaction cell (drc), of an inductively coupled plasma mass spectrometer (icp-ms).
Perkinelmer Health Sciences, Inc.

Transparent wildlife covers for high voltage electrical equipment

The invention relates to a transparent silicone rubber cover for animal mitigation a pliable cover made from a ultraviolet stable non-conductive polymer to encapsulate an electrical bushing used as a conduit for an electrical lead, the lead attached to the bushing via a connector device and a plurality of spaced apart non-electrically conductive button-snaps and associated holes along flanges on each side of the opening to secure the cover circumferentially around the bushing, and wherein a top portion of the cover contains a centrally located port that provides access for an electrical lead line to the bushing.. .
Midsun Group, Inc.

Optical fingerprint recognition sensor package

An optical fingerprint recognition sensor package, which comprises a carrier, at least one image sensor, at least one light emitting diode, a first molding compound and at least one second molding compound is provided. The image sensor is disposed on the carrier and being electrically connected thereto.
Tron Intelligence Inc.

Fractional redundant array of silicon independent elements

Higher-level redundancy information computation enables a solid-state disk (ssd) controller to provide higher-level redundancy capabilities to maintain reliable operation in a context of failures of non-volatile (e.g. Flash) memory elements during operation of an ssd implemented in part by the controller.
Seagate Technology Llc

Programmable integrated circuit with stacked memory die for storing configuration data

A system may include a host processor, a coprocessor for accelerating tasks received from the host processor, and one or more memory dies mounted to the coprocessor. The coprocessor and the memory die may be part of an integrated circuit package.
Intel Corporation

Electrostatic latent image developer and producing electrostatic latent image developer

The disclosure concerns an electrostatic latent image developer including: a toner having toner base particles and an external additive; and a carrier, wherein the external additive contains silicone oil-treated silica and titanium oxide, net intensity of titanium (ti) in the toner to be measured by x-ray fluorescence analysis is 0.5 to 5 kcps, the carrier has a resin coating layer coating core material particles, and the resin coating layer has a constituent unit formed from an alicyclic (meth)acrylic acid ester.. .
Konika Minolta, Inc.

Silicon wafer transportation system

A wafer transfer system for use in a photolithography system including a wafer storage apparatus, a pre-alignment apparatus, a buffer stage and a wafer stage is disclosed, which includes: a dual-arm robot, configured to take a wafer to be exposed from the wafer storage apparatus and transfer it onto the pre-alignment apparatus and further configured to remove an exposed wafer from the buffer stage and place it back into the wafer storage apparatus; a wafer-loading linear robot, configured to transfer a pre-aligned wafer onto the wafer stage; and a wafer-unloading linear robot, configured to transfer the exposed wafer onto the buffer stage. The dual-arm robot, the wafer-loading linear robot and the wafer-unloading linear robot can operate in parallel so as to achieve time savings in the wafer transfers..
Shanghai Micro Electronics Equipment (group) Co. Ltd.

Mask blank, phase shift mask, and manufacturing semiconductor device

The phase shift film has a function to transmit arf exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting arf exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.8 and extinction coefficient k of 2.0 or more; the upper layer has refractive index n of 2.3 or more and extinction coefficient k of 1.0 or less; and the upper layer has more thickness than the lower layer.. .

Ultra-responsive phase shifters for depletion mode silcon modulators

A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters.
Elenion Technologies, Llc

Wavelength-tunable iii-v/si hybrid optical transmitter

An optical transmitter includes a reflective semiconductor optical amplifier (rsoa) coupled to an input end of a first optical waveguide. An end of the first optical waveguide provides a transmitter output for the optical transmitter.
Oracle International Corporation

Optical diffuser and its manufacture

Methods of manufacture of an optical diffuser. In one embodiment, an optical diffuser is formed by providing a wafer including a silicon slice of which an upper face is covered with a first layer made of a first material itself covered with a second layer made of a second selectively etchable material with respect to the first material.
Stmicroelectronics (crolles 2) Sas

Manufacturing micro-nano structure antireflective coating layer and display apparatus thereof

A manufacturing method of micro-nano structure antireflective coating layer and a display apparatus thereof are described. The method includes providing a substrate, forming a silicon oxide layer on the substrate, forming a graphene layer with a hexagonal honeycomb lattice on the silicon oxide layer, and forming a bottom surface of the antireflective coating layer in the nucleation points by serving the graphene layer as a growing base layer, wherein a diffusion length and an atomic mass of diffusion atoms of the antireflective coating layer are decreased with time by a gradient growing manner to form a upper surface of the antireflective coating layer..
Wuhan China Star Optoelectronics Technology Co., Ltd.

Diagnosis internal fault of oil-immersed electric apparatus

The present invention is a diagnosis method for internal fault of an oil-immersed electric apparatus using a silicone oil as an insulating oil. The method diagnoses an internal fault of the oil-immersed electric apparatus based on a first concentration ratio that is a concentration ratio between two gases selected from an analysis gas group consisting of hydrogen gas, methane gas, ethane gas, and ethylene gas contained in the, silicone oil, and a second concentration ratio that is a concentration ratio between the other two gases selected from the analysis gas group.
Mitsubishi Electric Corporation

Methods and devices for the high-volume production of silicon chips with uniform anti-reflective coatings

This present disclosure generally relates to devices, methods, and systems for producing large numbers of sio2 coated silicon chips with uniform film thickness controlled to angstrom and sub angstrom levels. The disclosure further relates to etching plates configured for receiving a plurality of chips mounted thereon..
Adarza Biosystems, Inc.

Spiral spring and its manufacturing

A spiral spring and a method of manufacturing the spiral spring are disclosed. The spiral spring includes at least one winding, which includes a core made of a silicon material.
Damasko Uhrenmanufaktur Kg

Aqueous urethane resin composition and synthetic leather

The present invention provides an aqueous urethane resin composition including: a urethane resin (a) that is a reaction product of essential ingredients including a polyol (a1), a reactive silicone (a2) having a number average molecular weight of 4,000 or more and having a functional group reactive with an isocyanate group, and a polyisocyanate (a3); and an aqueous medium (b). The present invention also provides a synthetic leather including a skin layer formed from the aqueous urethane resin composition and/or a surface-treated layer formed from the aqueous urethane resin composition.
Dic Corporation

Device and removing fur and hair from fabrics

A disk, ball or sheet/strip shaped device is made of a silicone elastomer substance having a tacky surface and a shore durometer hardness preferably in the range of 10 to 40. The device is adapted to be placed into a laundry washer or dryer, such that the tumbling motion causes the tacky surfaces of the device to rub against the clothing, thereby removing pet fur.

Method for produciung a diamond electrode and diamond electrode

The invention relates to a method for producing a diamond electrode, which comprises the following steps: a) providing a main body (2) composed of silicon, the dimensions of which are greater than the dimensions of the diamond electrode (22) to be produced, b) etching at least one recess (10) into the surface of the main body (2), c) introducing predetermined breaking points (18) into the main body (2), d) coating the main body (2) with diamond, e) breaking the diamond electrode (22) out of the main body (2) along the predetermined breaking points (18).. .
Condias Gmbh

Film formation processing method and film formation procesing apparatus

There is provided a film formation processing method for forming, in a vacuum atmosphere, a silicon nitride film along an inner wall surface of a recess constituting a pattern formed on a surface of a substrate, which includes: forming the silicon nitride film on the substrate by repeating, plural times, a process of supplying a raw material gas containing silicon to the substrate and subsequently, supplying an ammonia gas to the substrate to generate a silicon nitride on the substrate; and subsequently, modifying the silicon nitride film by activating a hydrogen gas and an ammonia gas and supplying the activated hydrogen gas and the activated ammonia gas to the substrate.. .
Tokyo Electron Limited

Methods for depositing amorphous silicon layers or silicon oxycarbide layers via physical vapor deposition

In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.. .
Applied Materials, Inc.

Process for the production of a pgm-enriched alloy

A process for the production of a pgm-enriched alloy comprising 0 to 60 wt.-% of iron and 20 to 99 wt.-% of one or more pgms selected from the group consisting of platinum, palladium and rhodium, the process comprising the steps of (1) providing a pgm collector alloy comprising 30 to 95 wt.-% of iron, less than 1 wt.-% of sulfur and 2 to 15 wt.-% of one or more pgms selected from the group consisting of platinum, palladium and rhodium, (2) providing a copper- and sulfur-free material capable of forming a slag-like composition when molten, wherein the molten slag-like composition comprises 40 to 90 wt.-% of magnesium oxide and/or calcium oxide and 10 to 60 wt.-% of silicon dioxide, (3) melting the pgm collector alloy and the material capable of forming a slag-like composition when molten in a weight ratio of 1:0.2 to 1 within a converter until a multi- or two-phase system of a lower high-density molten mass comprising the molten pgm collector alloy and one or more upper low-density molten masses comprising the molten slag-like composition has formed, (4) contacting an oxidizing gas comprising 0 to 80 vol.-% of inert gas and 20 to 100 vol.-% of oxygen with the lower high-density molten mass obtained in step (3) until it has been converted into a lower high-density molten mass of the pgm-enriched alloy, (5) separating an upper low-density molten slag formed in the course of step (4) from the lower high-density molten mass of the pgm-enriched alloy making use of the difference in density, (6) letting the molten masses separated from one another cool down and solidify, and (7) collecting the solidified pgm-enriched alloy.. .
Heraeus Precious Metals North America Llc

High-strength thin steel sheet with excellent drawability and bake hardenability, and manufacturing same

A high-strength thin steel sheet having excellent drawability and bake hardenability, and a method of manufacturing the same are provided. The high-strength thin steel sheet includes 0.0005 to 0.003 wt % of carbon (c); 0.5 wt % or less (excluding 0 wt %) of silicon (si); 1.2 wt % or less (excluding 0 wt %) of manganese (mn); 0.005 to 0.12 wt % of phosphorous (p); 0.008 wt % or less of sulfur (s); 0.005 wt % or less of nitrogen (n); 0.1 wt % or less (excluding 0 wt %) of acid-soluable aluminum (al); 0.01 to 0.04 wt % of titanium (ti); iron (fe) as a remainder thereof; and unavoidable impurities.
Posco

Curable composition, and moulded body

Provided is a curable composition which can form, when cured, a cured product having high surface hardness and offering excellent flexibility and workability. The curable composition according to the present invention contains a cationically curable silicone resin, an epoxy compound other than the cationically curable silicone resin, and a leveling agent.
Daicel Corporation

Surface coating composition

The present invention relates to a composition which contains—a wax (w), a silicone oil (s), —a binder (b), —one or more pigment(s) and/or filler(s) (pf1) of an average particle size of 0.1 to 1.0 μm in a total amount of 8.0 to 55 wt. %, —one or more pigment(s) and/or filler(s) (pf2) of an average particle size of more than 1.0 to 10 μm in a total amount of 5.0 to 40 wt.
Sto Se & Co. Kgaa

Enhancing release of bulk solids from a surface

Methods of enhancing release of bulk solids from a surface are provided. The methods comprise wetting the surface with a substance comprising water, a fatty acid, an emulsifier, and a carrier oil.
Ecolab Usa Inc.

Functionalized cyanosilane and synthesis method and use thereof

The present teachings relate to a functionalized silyl cyanide and synthetic methods thereof. As an example, the method may include adding a raw material silane and a cyanide source mcn in an organic solvent to produce the functionalized silyl cyanide in the absence of catalyst or in the presence of a metal salt catalyst.
East China Normal University

Composite material and making

A method for making a composite material includes disposing a quantity of liquid comprising at least 90 weight percent molten boron within pores of a porous preform, the preform comprising a preform material; and reacting at least a portion of the molten boron with a portion of the preform material to form a solid ceramic reaction product, thereby forming a ceramic matrix composite material. An article comprises a composite material; the composite material comprises a fibrous phase disposed within a matrix.
General Electric Company

Thermally insulating glass for ovens and preparation method thereof

A thermally insulating glass for ovens includes a glass substrate, a thermally insulating layer and a protective layer. The glass substrate has an inner and outer surfaces, and the inner or/and outer surfaces are coated with the thermally insulating layer made of silver.
Dongguan Shine Glass Co., Ltd

Primary distillation boron reduction

The present invention relates to an apparatus and a method for producing polycrystalline silicon having a reduced amount of boron compound impurities. Especially, the boron compounds are removed from the process for producing polycrystalline silicon, while the trichlorosilane is purified by distillation.
Mitsubishi Materials Corporation

Molded fluid flow structure

A fluid flow structure may include a micro device embedded in a monolithic molding. The molding may include a channel therein through which fluid flows directly into the micro device.
Hewlett-packard Development Company, L.p.

Substrate comprising a stack having thermal properties

The invention relates to a substrate (10), especially a transparent glass substrate, provided with a thin-film multilayer comprising a functional layer (40) having reflection properties in the infrared and/or in solar radiation, especially a metallic functional layer based on silver or on a metal alloy containing silver, and two coatings (20, 60), said coatings being composed of a plurality of dielectric layers (24, 26; 64), so that the functional layer (40) is placed between the two coatings (20, 60), the functional layer (40) being deposited on a wetting layer (30) itself deposited directly onto a subjacent coating (20), characterized in that the subjacent coating (20) comprises at least one dielectric layer (24) based on nitride, especially on silicon nitride and/or aluminum nitride, and at least one noncrystalline smoothing layer (26) made from a mixed oxide, said smoothing layer (26) being in contact with said superjacent wetting layer (30).. .
Saint-gobain Glass France

Cosmetic implant

A cosmetic implant includes a silicone gel core and an outermost hydrophilic coating on all sides of the silicone gel core. An intermediate coating can be provided between the silicone gel core and the outermost coating.

Silicone lace with a strong visual identity and improved tear strength, and lacing system formed by a plate for locking the lace in place on the shoe

The invention is intended to provide silicone elastomer laces that are improved in terms of branding and/or ornamentation and/or tear strength and/or additional novel functions other than the mechanical properties and external appearance thereof, as well as a novel lacing solution. For this purpose, the invention relates first to a lace (1) for a shoe (2) equipped with a lace passage (3), the two edges (4, 5) of said passage having through-holes (7).
Alpurna Development

Joint protection device and method

The invention is directed to a joint protection device that has a frame of an elastomeric material. The elastomeric material has a flash point above 500 degrees celsius.

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Shin-etsu Chemical Co., Ltd.

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Nisshinbo Holdings Inc.

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Tokyo University Of Science Foundation

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Vibration transducer

A vibration transducer includes a silicon substrate, a first oxide film formed on the silicon substrate, an activation layer formed on the first oxide film, a second oxide film formed on the activation layer, a polysilicon layer formed on the second oxide film, and a substrate contact part. A vibrator, a vibrator electrode electrically conducted with the vibrator, a fixed electrode close to the vibrator and a vacuum chamber configured to surround the vibrator are formed in the activation layer.
Yokogawa Electric Corporation

Optical amplifier including multi-section gain waveguide

Described herein are methods, systems, and apparatuses to utilize a semiconductor optical amplifier (soa) comprising a silicon layer including a silicon waveguide, a non-silicon layer disposed on the silicon layer and including a non-silicon waveguide, first and second mode transition region comprising tapers in the silicon waveguide and/or the non-silicon waveguide for exchanging light between the waveguide, and a plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide such that confinement factors for the non-silicon waveguide in each of the plurality of regions differ.. .
Juniper Networks, Inc.

Polymer electrolyte and electrochemical devices comprising same

The invention relates to a polymer electrolyte comprising a silicone polymer bearing pending polyoxyalkylene ether groups, at least one fluorinated salt and a solvent, said solvent representing between 10% and 60% by weight, relative to the total weight of the silicone polymer bearing pending polyoxyalkylene ether groups, of the fluorinated salt and of the solvent, and said solvent comprising at least one polyether solvent. In addition, the invention also relates to a process for producing said polymer electrolyte and to the uses thereof as an electrolyte in an electrochemical device, in particular as an electrolyte in a battery or in an electronic display device, in particular an electrochemical device..
Rhodia Operations

Flexible, planar, double sided air breathing microscale fuel cell

Flexible air-breathing microscale fuel cells are produced using ion exchange polymer membranes without silicon substrates or other rigid components. The microscale fuel cells provide long-life energy supply sources in portable electronics due to reduced volume, high energy density, and low cost.
The Trustees Of The Stevens Institute Of Technology

Cathode electrode material and lithium sulfur battery using the same

A cathode electrode material and a lithium sulfur battery are disclosed. The cathode electrode material includes the cathode binder.
Tsinghua University

Binder for lithium cell, composition for producing electrode, and electrode

The present invention relates to “a binder for a lithium cell, the binder comprising polyacrylic acid cross-linked by a cross-linking agent selected from the compounds described in the general formulae [1] to [13] and the polymer described in the general formula [14] (provided that the one which includes a functional group-containing vinylidene fluoride-based polymer is excluded)”; a “composition for producing an electrode of a lithium cell, the composition comprising 1) an active material containing silicon, 2) a conductive assistant and 3) a cross-linked-type polyacrylic acid (provided that the one containing a functional group-containing vinylidene fluoride-based polymer is excluded)”; and an “electrode for a lithium cell, the electrode comprising 1) an active material containing silicon, 2) a conductive assistant, 3) a cross-linked-type polyacrylic acid, and 4) a current collector (provided that the one containing a functional group-containing vinylidene fluoride-based polymer is excluded)”.. .

Method for manufacturing silicon flakes, silicon-containing negative electrode and manufacturing the same

A method for manufacturing silicon flakes includes steps as follows. A silicon material is contacted with a machining tool which includes at least one abrasive particle fixedly disposed thereon.
Auo Crystal Corporation

Packaging material, organic light-emitting diode device and packaging the same

The present disclosure provides a packaging material, an oled device and a method for packaging the oled device. The packaging material for a transparent device includes a primary ingredient including a rare earth metal oxide, zinc oxide, aluminum oxide and silicon dioxide, and an adhesive for adhering the primary ingredient.
Boe Technology Group Co., Ltd.

Method for reducing the wet etch rate of a sin film without damaging the underlying substrate

Methods and apparatuses for forming conformal, low wet etch rate silicon nitride films having low hydrogen content using atomic layer deposition are described herein. Methods involve depositing a silicon nitride film at a first temperature using a bromine-containing and/or iodine-containing silicon precursor and nitrogen by atomic layer deposition and treating the silicon nitride film using a plasma at a temperature less than about 100° c.
Lam Research Corporation

Piezoelectric mems microphone

A piezoelectric mems microphone comprising a multi-layer sensor that includes at least one piezoelectric layer between two electrode layers, with the sensor being dimensioned such that it provides a near maximized ratio of output energy to sensor area, as determined by an optimization parameter that accounts for input pressure, bandwidth, and characteristics of the piezoelectric and electrode materials. The sensor can be formed from single or stacked cantilevered beams separated from each other by a small gap, or can be a stress-relieved diaphragm that is formed by deposition onto a silicon substrate, with the diaphragm then being stress relieved by substantial detachment of the diaphragm from the substrate, and then followed by reattachment of the now stress relieved diaphragm..
The Regents Of The University Of Michigan

Micro-light emitting diode (led) fabrication by layer transfer

Embodiments relate to fabricating a micro-light emitting diode (led) structure utilizing layer-transferred material. In particular, high quality gallium nitride (gan) is grown upon a donor substrate, utilizing techniques such as hydride vapor phase epitaxy (hvpe).
Qmat, Inc.

Semiconductor wafers and semiconductor devices with barrier layer and methods of manufacturing

A semiconductor ingot is sliced to obtain a semiconductor slice with a front side surface and a rear side surface parallel to the front side surface. A passivation layer is formed directly on at least one of the front side surface and the rear side surface.
Infineon Technologies Ag

Solar cell piece, solar cell module, solar piece unit and preparation method therefor

A solar cell piece, a solar cell module, a cell piece unit, and a preparation method thereof. The solar cell piece has an aluminum back field coating, a silicon chip layer, and thin gate lines.
Suzhou Autoway System Co., Ltd.

Method of forming an electrode structure and manufacturing a photovoltaic cell using the same

In a method of forming an electrode structure for a photovoltaic cell, a transparent conductive layer is formed on a semiconductor layer of amorphous silicon material doped with dopants of a first conductive type. Then, a first metal pattern is formed on the transparent conductive layer by performing an ink jet process using metal nano ink.
Korea University Research And Business Foundation

Uv-curing of light-receiving surfaces of solar cells

Methods of fabricating solar cells using uv-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate.
Sunpower Corporation

Semiconductor device

Germanium (ge) contamination to a semiconductor manufacturing apparatus is suppressed. Germanium is a dissimilar material in a silicon semiconductor process.
Renesas Electronics Corporation

Semiconductor device and manufacturing semiconductor device

A semiconductor device includes an active region provided in an n+-type silicon carbide substrate and through which main current flows, a termination region that surrounds a periphery of the active region, and a p-type silicon carbide layer provided on a front surface of the n+-type silicon carbide substrate and extending into the termination region. A region of the p-type silicon carbide layer extending into the termination region includes one or more step portions that progressively reduce a thickness of the p-type silicon carbide layer as the p-type silicon carbide layer becomes farther outward from the active region..
Fuji Electric Co., Ltd.

High resistivity silicon-on-insulator wafer manufacturing reducing substrate loss

A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm; a semiconductor nitride layer in contact with the semiconductor handle substrate, the semiconductor nitride layer selected from the group consisting of aluminum nitride, boron nitride, indium nitride, gallium nitride, aluminum gallium nitride, aluminum gallium indium nitride, aluminum gallium indium boron nitride, and combinations thereof; a dielectric layer in contact with the semiconductor nitride layer; and a semiconductor device layer in contact with the dielectric layer..
Sunedison Semiconductor Limited (uen201334164h)

Forming a fin using double trench epitaxy

The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a fin using double trench epitaxy. The fin may be composed of a iii-v semiconductor material and may be grown on a silicon, silicon germanium, or germanium substrate.
International Business Machines Corporation

Silicon carbide semiconductor element and manufacturing silicon carbide semiconductor

A silicon carbide semiconductor element includes n-type silicon carbide epitaxial layers formed on an n+-type silicon carbide semiconductor substrate, plural p base layers selectively formed in surfaces of the silicon carbide epitaxial layers, a p-type silicon carbide epitaxial layer formed in the silicon carbide epitaxial layer, and a trench penetrating at least the silicon carbide epitaxial layer. The silicon carbide semiconductor element also includes, in a portion of the silicon carbide epitaxial layer, a mesa portion exposing the p base layer.
Fuji Electric Co., Ltd.

Method of manufacturing silicon carbide semiconductor device

In a method of manufacturing a silicon carbide semiconductor device, an n-type drift layer and a p-type epitaxial base layer are sequentially deposited onto an n-type silicon carbide substrate. Next, n-type source regions and a p-type base contact region are formed in the surface layer of the p-type epitaxial base layer.
Fuji Electric Co., Ltd.

Silicon carbide semiconductor device and manufacturing the same

A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, and a gate electrode. The gate insulating film is provided as being in contact with the first main surface of the silicon carbide substrate.
Renesas Electronics Corporation

Silicon carbide semiconductor device and manufacturing silicon carbide semiconductor device

A silicon carbide semiconductor device includes plural p-type silicon carbide epitaxial layers provided on an n+-type silicon carbide substrate. In some of the p-type silicon carbide epitaxial layers, an n+ source region is provided in at least a region of an upper portion.
Fuji Electric Co., Ltd.

Silicon carbide semiconductor device and manufacturing silicon carbide semiconductor device

A silicon carbide semiconductor device includes an n-type drift layer and a p-type epitaxial base layer deposited on an n-type silicon carbide substrate, as well as first trenches and second trenches. N-type source regions are formed in the surface layer of the p-type epitaxial base layer, in the sidewalls of the first trenches, and in the bottoms of the first trenches.
Fuji Electric Co., Ltd.

Method of preventing bulk silicon charge transfer for nanowire and nanoslab processing

A method of fabricating a semiconductor device includes providing a substrate having a layered fin structure thereon. The layered fin structure includes base fin portion, a sacrificial portion provided on the base fin portion and a channel portion provided on the sacrificial portion.
Tokyo Electron Limited

Sic-based superjunction semiconductor device

A method of producing a semiconductor device includes providing a semiconductor body including a semiconductor body material having a dopant diffusion coefficient that is smaller than the corresponding dopant diffusion coefficient of silicon. At least one first semiconductor region doped with dopants of a first conductivity type is produced in the semiconductor body, including by applying a first implantation of first implantation ions.
Infineon Technologies Ag

Light emitting element display device

A display device includes two or more transistors in one pixel, and the two or more transistors include a first transistor of which a channel semiconductor layer is polycrystalline silicon, and a second transistor of which a channel semiconductor layer is an oxide semiconductor.. .
Japan Display Inc.

Self-aligned back-plane and well contacts for fully depleted silicon on insulator device

The present disclosure generally relates to semiconductor structures and, more particularly, to self-aligned back-plane and well contacts for a fully depleted silicon on insulator device and methods of manufacture. The structure includes a back-plane, a p-well and an n-well formed within a bulk substrate; a contact extending from each of the back-plane, the p-well and the n-well; a gate structure formed above the back-plane, the p-well and the n-well; and an insulating spacer isolating the contact of the back-plane from the gate structure..
Globalfoundries Inc.

Semiconductor device

A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.. .
Samsung Electronics Co., Ltd.

Porous silicon relaxation medium for dislocation free cmos devices

A method for forming cmos devices includes masking a first portion of a tensile-strained silicon layer of a soi substrate, doping a second portion of the layer outside the first portion and growing an undoped silicon layer on the doped portion and the first portion. The undoped silicon layer becomes tensile-strained.
International Business Machines Corporation

Handle substrate for use in manufacture of semiconductor-on-insulator structure and manufacturing thereof

A method is provided for preparing a high resistivity silicon handle substrate for use in semiconductor-on-insulator structure. The handle substrate is prepared to comprise thermally stable charge carrier traps in the region of the substrate that will be at or near the buried oxide layer (box) of the final semiconductor-on-insulator structure.
Sunedison Semiconductor Limited (uen201334164h)

Sin spacer profile patterning

Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon nitride surface on a semiconductor substrate within a processing region of a semiconductor processing chamber.
Applied Materials, Inc.

Cleaning method

Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition.
Applied Materials, Inc.

Method for high modulus ald sio2 spacer

Methods and apparatuses for forming high modulus silicon oxide spacers using atomic layer deposition are provided. Methods involve depositing at high temperature, using high plasma energy, and post-treating deposited silicon oxide using ultraviolet radiation.
Lam Research Corporation

Selective inhibition in atomic layer deposition of silicon-containing films

Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant.
Lam Research Corporation

Apparatus and handling an implant

An apparatus for plasma treatment of an implant prior to installing the implant in a live subject is provided. The apparatus comprises an activation device and a portable container detachable from the activation device.
Nova Plasma Ltd.

Method for manufacturing magnetic particles, magnetic particles, and magnetic body

Provided is a method for manufacturing magnetic particles, in which an oxidation treatment, a reduction treatment, and a nitriding treatment are performed in that order on raw material particles with a core-shell structure in which a silicon oxide layer is formed on the surfaces of iron microparticles, thereby nitriding the iron microparticles while maintaining the core-shell structure. Due to this configuration, granular magnetic particles with a core-shell structure in which a silicon oxide layer is formed on the surfaces of iron nitride microparticles can be obtained..
Nisshin Engineering Inc.

Euv multilayer mirror

To suppress the breakage of a mirror for reflecting high-intensity euv light, an euv multilayer mirror presenting a bragg diffraction effect is formed by a pile of a plurality of heavy-element layers (102) and a plurality of light-element layers (103) disposed on a substrate (101), wherein the light-element layers and the heavy-element layers are alternately deposited. The heavy-element layers (102) contain niobium as a main component, and the light-element layers (103) contain silicon as a main component.
Ntt Advanced Technology Corporation

Gate driver on array circuit based on low temperature poly-silicon semiconductor thin film transistor

The present disclosure proposes a goa circuit based on ltps tfts. A ninth tft is introduced to adjust the high and low voltage levels imposed on the second node p(n).
Wuhan China Star Optoelectronics Technology Co., Ltd.

Integrated electro-optic modulator

An e/o phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension..
Stmicroelectronics (crolles 2) Sas

Vertical integration of hybrid waveguide with controlled interlayer thickness

An silicon photonics device of hybrid waveguides having a coupling interlayer with an accurately controlled thickness and a method of making the same. The device includes a first plurality of si waveguides formed in a soi substrate and a first layer of sio2 overlying the first plurality of si waveguides and a second plurality of si3n4 waveguides formed on the first layer of sio2.
Inphi Corporation

Electrical cell-substrate impedance sensor (ecis)

A method for detection and monitoring a therapeutic effect of a cancer treatment drug is disclosed. The method includes steps of removing a malignant biological cell lines from a tumor; culturing the removed biological cell lines in a controlled set of conditions; seeding the cultured biological cell lines on silicon nanowire electrode arrays of an electrical cell-substrate impedance sensor (ecis); adding a cancer treatment drug to the seeded biological cell lines to treat the seeded biological cell lines; and measuring an electrical impedance of the treated biological cell lines for detection and monitoring a therapeutic effect of the cancer treatment drug..

Methods for inspecting semiconductor wafers

Methods and systems are presented for analysing semiconductor materials as they progress along a production line, using photoluminescence images acquired using line-scanning techniques. The photoluminescence images can be analysed to obtain spatially resolved information on one or more properties of said material, such as lateral charge carrier transport, defects and the presence of cracks.
Bt Imaging Pty Ltd.

Seed crystal holder for pulling up single crystal and manufacturing silicon single crystal using the same

A seed crystal holder for pulling up a single crystal is made of a carbon fiber-reinforced carbon composite material, and has a substantially cylindrical shape with a hollow space having a shape matching an outer shape of a substantially rod-shaped seed crystal. A direction of carbon fibers at a part in contact with at least an outer peripheral surface of the seed crystal has isotropy as viewed from a central axis of the hollow space..
Sumco Corporation

Catalyst for water splitting and preparing same

The present invention relates to a catalyst for water splitting consisted of an oxide or a hydroxide that comprises silicon and one or more transition metals selected from a group consisting of mn, fe, co, ni, and cu, and is amorphous, and a method of preparing the same.. .
Snu R & Db Foundation

Hard thin films

Systems and methods provide for the improvement of surface properties via deposition of a film. A typical film may comprise at least three, including at least four components, and typically includes at least one of, including both of, nitrogen and oxygen.
Hpvico Ab

Molybdenum-silicon-boron alloy and producing same, and component

The use of a specific molybdenum-silicon-boron alloy and a particular production process in which powder is used makes it possible to achieve components which have a particular fiber-matrix structure and can be used for high-temperature applications and can also be produced inexpensively.. .
Siemens Aktiengesellschaft

Lubricant for conveying containers

The passage of a container along a conveyor is lubricated by applying to the container or conveyor a lubricant composition comprising a water-miscible silicone material having a silicone emulsion wherein the silicone emulsion contains less than 500 ppm of a triethanolamine salts of alkyl benzene sulfonic acid compounds.. .
Ecolab Usa Inc.

Lubricant including silicon-containing ionic liquid

(in the formula, r1 represents an alkyl group having 1 to 10 carbon atoms, r2 represents an alkyl group having 8 to 20 carbon atoms, and r3 represents an alkyl group having 1 to 8 carbon atoms. Herein, it is provided that the number of carbon atoms in r2 is greater than the number of carbon atoms in r1.).

Mixed anion cesium rare earth silicates

Scintillating compounds, methods of synthesizing scintillating compounds, and applications of scintillating compounds are disclosed. The scintillating compounds can include cesium rare earth silicates.
University Of South Carolina

High temperature resistant pressure sensitive adhesive with low thermal impedance

A high temperature resistant thermally conductive pressure sensitive adhesive composition comprising a first silicon resin, a second silicon resin, a first thermally conductive filler, a second thermally conductive filler, a catalytically effective amount of a curing agent, an optional defoaming agent, and an optional drying agent, wherein said thermally conductive filler has a volume weighted mean particle size in the range of 8 to 20 μm.. .
Polyonics, Inc.

Pressure sensitive adhesive sheet, producing the same, and pressure sensitive adhesive sheet member

A pressure sensitive adhesive sheet includes a transparent sheet base material, a first pressure sensitive adhesive layer, and a second pressure sensitive adhesive layer, and a pressure sensitive adhesive strength by a pressure of 1 n/cm2 or less is 0 n/25 mm. The first pressure sensitive adhesive layer includes a first silicone-based pressure sensitive adhesive and the second pressure sensitive adhesive layer has a second silicone-based pressure sensitive adhesive and a plurality of protrusions formed of a plurality of fine particles.
Fujifilm Corporation

Methods for synthesis of end-functionalized polyolefins

A strategy for the synthesis of semi-telechelic polyethylene through the palladium diimine-catalyzed chain transfer polymerization of ethylene using various silanes as chain transfer agents is reported. Polymer molecular weight and end-group chemical structure can be tuned by varying the chain transfer agent as well as its concentration.
The Board Of Trustees Of The University Of Illinois

Addition-curable silicone rubber composition and cured product

That makes it possible to provide silicone rubber that can lower the compression set without harming the curing rate and suppress discoloration after a heat resistance test.. .

Alcohol compound

Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by cvd, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (i).
Adeka Corporation

Oxidation protection for carbon-carbon composites

The method may include forming fibers with a silicon-based sizing, forming a fibrous preform from the fibers, forming a silicon dioxide coating around the fibers, carbonizing the fibrous preform, and densifying the fibrous preform. In various embodiments, forming the fibers with the silicon-based sizing includes utilizing a mass of the silicon-based sizing that is at least 1.0% of a mass of the fibers..
Goodrich Corporation

Sialon composite and cutting tools made thereof

A sialon composite includes a sialon phase including α-sialon phase, β-sialon phase and grain boundary phase. The sialon composite is prepared from a starting powder mixture including a silicon nitride powder and at least one powder providing aluminum, oxygen, nitrogen, yttrium (y) and erbium (er) to the sialon composite.
Taegutec, Ltd.

Silicon nitride sintered body and high-temperature-resistant member using the same

The present invention provides a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, wherein the silicon nitride crystal grains are covered with the grain boundary phase and width of the grain boundary phase is 0.2 nm or more. It is preferable that the width of the grain boundary phase is 0.2 nm to 5 nm.
Toshiba Materials Co., Ltd.

Micropowder and manufacturing the same

A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° c. To 1800° c.
Industrial Technology Research Institute

Process and plant that decomposes monosilane

A method that decomposes monosilane wherein a monosilane-containing gas stream is circulated in a circuit system including a reactor that decomposes the monosilane, the method including injecting a monosilane-containing gas stream into the reactor, bringing the gas stream into contact with a heated surface inside the reactor at which surface a portion of the monosilane in the gas stream is decomposed to deposit a solid silicon layer on the surface so that the concentration of the monosilane in the gas stream decreases, discharging the gas stream from the reactor, reprocessing the gas stream including at least partially compensating the decrease in the monosilane concentration resulting from the decomposition by addition of monosilane, and reinjecting the reprocessed, monosilane-containing gas stream into the reactor, wherein during deposition an operating pressure of 2.5 to 10 bar is established and the gas stream enters the reactor at a velocity of less than 7.5 m/s.. .
Schmid Silicon Technology Gmbh

Silicon nitride substrate and silicon nitride circuit board using the same

A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 w/m·k or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (t2/t1) of a total length t2 of the grain boundary phase in a thickness direction with respect to a thickness t1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kv/mm or more.
Toshiba Materials Co., Ltd.

Localized silicone heat shielding for extension dash panels

A method for making an insulated vehicle extension dash panel includes injection molding an extension dash panel from a structural polymer. The method further includes adding a plurality of components to a mixer to form an insulating foaming layer.
Ford Global Technologies, Llc

Biodegradable reinforced paper packaging material and its manufacturing method

A paper packaging material, and method for manufacturing it, having a paper layer with a polyethylene coating on one surface, a biodegradable resin grid on the opposite surface to enhance its strength while maintaining reduced weight and a thermo-sealing resin, which eliminates the use of glues in the packaging process. The vegetal resin is made out of vegetable wax, acrylic styrene copolymer, demineralized water, water based silicone and natural fungicide.
Chroma Paper Ltd

Compressible, multilayer articles and making thereof

The present disclosure relates to compressible, multilayer articles useful in force sensing capacitors. The compressible multilayer articles include a silicone polymer layer having a first major surface and a second major surface and a first primer layer having a first major surface and a second major surface, wherein the thickness of the first primer layer is from about 100 nanometers to about 100 microns and at least a portion of the first major surface of the first primer layer is adhered to and in contact with the first major surface of the silicone polymer.
3m Innovative Properties Company

Tire having component with release coated surface and related processes

Disclosed herein are a tire comprising at least one component having a surface coated with a liquid release layer, a process for preparing a tire having at least one component with a surface coated with a release layer, and a cured tire comprising a tire body at least one component with a surface coated with a release layer. The release layer comprises at least one silicone rubber and at least one adhesive polymer which may be present in latex form in the liquid release layer..
Bridgestone Americas Tire Operations, Llc

Silicon ingot slicing apparatus using microbubbles and wire electric discharge machining

Provided are a silicon ingot slicing apparatus capable of slicing silicon ingots in various forms such as blocks or wafers using microbubbles and wire electric discharge machining.. .
Korea Institute Of Energy Research

Abrasive article including agglomerates having silicon carbide and an inorganic bond material

An abrasive article including a body including a bond material having an inorganic material including a ceramic, abrasive agglomerates including silicon carbide contained within the bond material, and a permeability of at least 60.. .
Saint-gobain Abrasifs

Systems and methods for low-manganese welding alloys

Systems and methods for low-manganese welding alloys are disclosed. An example arc welding consumable that forms a weld deposit on a steel workpiece during an arc welding operation, wherein the welding consumable comprises: less than 0.4 wt % manganese; strengthening agents selected from the group consisting of nickel, cobalt, copper, carbon, molybdenum, chromium, vanadium, silicon, and boron; and grain control agents selected from the group consisting of niobium, tantalum, titanium, zirconium, and boron, wherein the grain control agents comprise greater than 0.06 wt % and less than 0.6 wt % of the welding consumable, wherein the weld deposit comprises a tensile strength greater than or equal to 70 ksi, a yield strength greater than or equal to 58 ksi, a ductility, as measured by percent elongation, that is at least 22%, and a charpy v-notch toughness greater than or equal to 20 ft-lbs at −20° f., and wherein the welding consumable provides a manganese fume generation rate less than 0.01 grams per minute during the arc welding operation..
Hobart Brothers Company

Precipitation strengthened nickel based welding material for fusion welding of superalloys

A precipitation strengthened nickel based welding material that comprises 5-15 wt. % co, 5-25 wt.
Liburdi Engineering Limited

Adhesive composition

Moisture-curable adhesive compositions, their preparation and use are disclosed herein. The moisture-curable adhesive compositions include one or more reactive polymers, such as reactive silicone polymers, one or more adhesive components, such as a silicone pressure sensitive polymer(s) (psas), a cross-linker and a catalyst.
Coloplast A/s

Cosmetic

One of the purposes of the present invention is to provide a cosmetic composition having an excellent adhesion. Specifically, the purpose of the present invention is to provide a cosmetic composition which provides an effect of making eyelashes longer and provides natural gloss on eyelashes without blending fibers.
Shin-etsu Chemical Co., Ltd.

Cosmetic composition

Provided is a cosmetic composition formed from a silicone-branched polyglycerol-modified silicone, of which the weight-average molecular weight, in terms of polystyrene, does not exceed 10,000 according to gel permeation chromatography.. .
Shin-etsu Chemical Co., Ltd.

Solid stick antiperspirant compositions having non-volatile silicones

Solid stick antiperspirant compositions include an antiperspirant active, one or more waxes, and a plurality of liquids. The one or more waxes include a polar wax.
The Procter & Gamble Company

. .

. .

Delay line system and switching apparatus with embedded attenuators

Systems, methods, and apparatus for reducing standing wave reflections between delay line modules are described. The delay line modules include semiconductor switches, particularly mosfet switches fabricated on silicon-on-insulator (“soi”) and silicon-on-sapphire (“sos”) substrates and embedded attenuators..
Koppe Royalty B.v.

Lg Chem, Ltd.

. .

Versum Materials Us, Llc

. .

Light emitting diode lamp with burnable function and light emitting diode lamp string with burnable function

A light emitting diode lamp with a burnable function includes a light emitting diode and a light emitting diode driving apparatus. The light emitting diode driving apparatus receives a burn start signal and a burn address data sent through a first contact.
Semisilicon Technology Corp.

Ups systems and methods using coordinated static switch and inverter operation for generator walk-in

An uninterruptible power supply (ups) system includes an ac output, an inverter coupled to the ac output and configured to provide power at the ac output, and a switch configured to selectively couple a generator (e.g., an engine-generator set) to the ac output. The system further includes a control circuit configured to variably modulate the switch to gradually increase control power flow from the generator to the ac output while causing the inverter to concurrently provide power to the ac output.
Eaton Corporation

Photonic devices and methods of using and making photonic devices

Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed bragg reflectors (dbrs) formed in silicon nitride-based waveguides.

Flexible inorganic fuel cell membrane

A solid electrolyte includes an amorphous silica network and phosphoric acid. The phosphoric acid is contained in the amorphous silica network, and is typically in molecular form.

Negative electrode active material for electric device and electric device using the same

A negative electrode active material includes a silicon-containing alloy represented by: sixsnymzaa (a is unavoidable impurities, m is one or more transition metal elements, x, y, z, and a represent values of percent by mass, and 0<x<100, 0<y<100, 0<z<100, and 0≤a<0.5 and x+y+z+a=100). The silicon-containing alloy has a lattice image subjected to fourier transform processing to obtain a diffraction pattern.
Nissan Motor Co., Ltd.

Oled package structure and packaging method

An oled packaging method includes providing a substrate on which an oled device is formed and a package lid that comprises a trough formed to correspond to the oled device and receive a solid resin film therein, forming a loop of fritted glass on the package lid and outside the trough, forming a loop of inorganic protective frame made of silicon nitride on the substrate and at a location that is outside the trough and inside the fritted glass, forming a loop of adhesive on the package lid to correspond to the inorganic protective frame, and laminating the package lid and the substrate to each other such that the oled device is covered by the solid resin film and the inorganic protective frame is adhered to the adhesive to form a combined circumferential wall, which surrounds, together with the fritted glass, the oled device covered by the solid resin film.. .
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Plant and system for the automatic horizontal assembly of photovoltaic panels with front-back connection of the cells and pre-fixing

A plant and system for the automatic horizontal assembly of photovoltaic panels with front-back-contact solar cells of crystalline silicon, of the type called h-type, the contacting being carried out at a temperature lower than 150° c. Also with the pre-fixing of conductive elements onto the encapsulating layer.
Vismunda Srl

Monocrystal and polycrystal texturing method

A monocrystal and polycrystal texturing method, includes: 1: placing a silicon wafer in an acid liquid, where the acid liquid reacts with the surface of the silicon wafer to conduct acid corrosion; 2: washing the silicon wafer after acid corrosion by water and then drying the silicon wafer; 3: uniformly spreading an alkali liquid on the silicon wafer, where the alkali liquid reacts with the surface of the silicon wafer to conduct alkali corrosion; 4: washing the silicon wafer after alkali corrosion by water; 5: placing the silicon wafer in alkali solution for alkali washing; 6: washing the silicon wafer by water; 7: washing the silicon wafer by acid solution; and 8: washing the silicon after acid washing by water and then drying the silicon wafer. Steps 1 to 8 are conducted during monocrystal texturing, and steps 1 to 2 and steps 5 to 8 are conducted during polycrystal texturing..
Changzhou S.c Exact Equipment Co., Ltd.

Vertical transistor using a through silicon via gate

A vertical transistor is described that uses a through silicon via as a gate. In one example, the structure includes a substrate, a via in the substrate, the via being filled with a conductive material and having a dielectric liner, a deep well coupled to the via, a drain area coupled to the deep well having a drain contact, a source area between the drain area and the via having a source contact, and a gate contact over the via..
Intel Corporation

Semiconductor device and manufacturing semiconductor device

To provide a semiconductor device having a substrate contact in a deep trench thereof and having an improved characteristic. A pvd-metal film (metal film formed by pvd) is used as a first barrier metal film which is a lowermost layer barrier metal film formed in a deep trench penetrating an n type epitaxial layer and a reaching a layer therebelow.
Renesas Electronics Corporation

Integrated circuit comprising components, for example nmos transistors, having active regions with relaxed compressive stresses

An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the substrate limited by an insulating region. To address compressive stress in the active region, the circuit further includes at least one electrically inactive trench located at least in the insulating region and containing an internal area configured to reduce compressive stress in the active region.
Stmicroelectronics (rousset) Sas

Laterally diffused metal oxide semiconductor field-effect transistor and manufacturing method therefor

Provided are a laterally diffused metal oxide semiconductor field-effect transistor and a manufacturing method therefor. The method comprises: providing a wafer on which a first n well (22), a first p well (24) and a channel region shallow trench isolating structure (42) are formed; forming a high-temperature oxidation film on the surface of the wafer by deposition; photoetching and dryly etching the high-temperature oxidation film, and reserving a thin layer as an etching buffer layer; performing wet etching, removing the etching buffer layer in a region which is not covered by a photoresist, and forming a mini oxidation layer (52); performing photoetching and ion injection to form a second n well (32) in the first n well and form a second p well (34) in the first p well; forming a polysilicon gate (62) and a gate oxide layer on the surface of the wafer; and photoetching and injecting n-type ions to form a drain electrode (72) and a source electrode (74)..
Csmc Technologies Fab2 Co., Ltd.

Integrated capacitor with sidewall having reduced roughness

A method of forming an integrated capacitor on a semiconductor surface on a substrate includes etching a capacitor dielectric layer including at least one silicon compound material layer on a bottom plate which is above and electrically isolated from the semiconductor surface to provide at least one defined dielectric feature having sloped dielectric sidewall portion. A dielectric layer is deposited to at least partially fill pits in the sloped dielectric sidewall portion to smooth a surface of the sloped dielectric sidewall portion.
Texas Instruments Incorporated

Integrated trench capacitor with top plate having reduced voids

A method for forming trench capacitors includes forming a silicon nitride layer over a first region of a semiconductor surface doped a first type and over a second region doped a second type. A patterned photoresist layer is directly formed on the silicon nitride layer.
Texas Instruments Incorporated

Multiple subthreshold swing circuit and application to displays and sensors

An apparatus includes a junction field-effect transistor (jfet) and a set of one or more serially-connected diodes. The jfet includes a first layer including silicon of a first conductivity type, a gate, and first and second terminals.
International Business Machines Corporation

Display panel and manufacturing the same

An organic light emitting display panel including a first electrode, a second electrode on the first electrode, an organic layer between the first electrode and the second electrode and including at least one light emitting layer, an organic cover layer disposed on the second electrode, a lower layer between the organic cover layer and the second electrode and including a first layer, a second layer, and a third layer, which are different from each other and are sequentially stacked, and an upper layer on the organic cover layer. The first layer contacts the second electrode.
Samsung Display Co., Ltd.

Semiconductor device and semiconductor-device manufacturing method

It is possible to reduce resistance variations of a member connecting a through-silicon via to a line and improve wiring reliability. A hole through which the through-silicon via is to be stretched is created and an over-etching process is carried out on a wiring layer including the line.
Sony Corporation

Ltps array substrate and producing the same

An ltps array substrate includes: a substrate on which a gate is disposed. An insulating layer and a polycrystalline silicon layer are disposed in sequence on the substrate and the gate.
Wuhan China Star Optoelectronics Technology Co., Ltd

Ltps array substrate and producing the same

An ltps array substrate and a method for producing the same are proposed. The method includes: forming an insulating layer, a semiconductor layer, and a first positive photoresist layer on the substrate one by one; exposing one side of the substrate on the opposite side of the gate for forming a polycrystalline silicon layer; forming a source and a drain of the tft on the polycrystalline silicon layer; forming a pixel electrode on the insulating layer and part of the source; forming a plain passivation layer on a source-drain electrode layer; forming a transparent electrode layer on the plain passivation layer so that the transparent electrode layer is connected to the gate, the source, and the drain via the contact hole.
Wuhan China Star Optoelectronics Technology Co., L Td

Ltps array substrate and producing the same

An ltps array substrate and a method for producing the same are proposed. The method includes: forming a gate of a thin-film transistor (tft) of the ltps array substrate on a substrate; forming a first insulating layer, a semiconductor layer, and a positive photoresist layer on the substrate one by one; exposing one side of the substrate on the opposite side of the gate for forming a polycrystalline silicon layer; forming a second insulating layer on the substrate of the polycrystalline silicon layer; forming a source and a drain of the tft on the second insulating layer so that the source and the drain is electrically connected to the polycrystalline silicon layer via a contact hole.
Wuhan China Star Optoelectronics Technology Co., Ltd

Vertical thyristor cell and memory array with silicon germanium base regions

Memory arrays of vertical thyristor memory cells with sige base layers are described. The composition of the sige can be constant or varied depending upon the desired characteristics of the memory cells.
Kilopass Technology, Inc.

Well-based integration of heteroepitaxial n-type transistors with p-type transistors

Non-silicon fin structures extend from a crystalline heteroepitaxial well material in a well recess of a substrate. Iii-v finfets may be formed on the fin structures within the well recess while group iv finfets are formed in a region of the substrate adjacent to the well recess.
Intel Corporation

Semiconductor device including a repeater/buffer at upper metal routing layers and methods of manufacturing the same

A semiconductor device includes a series of metal routing layers and a complementary pair of planar field-effect transistors (fets) on an upper metal routing layer of the metal routing layers. The upper metal routing layer is m3 or higher.
Samsung Electronics Co., Ltd.

Semiconductor structure and manufacturing the same

The present disclosure provides a semiconductor structure, including a first silicon layer having a through silicon via (tsv), a iii-v structure over the first silicon layer, electrically coupling to the tsv, and a redistribution layer (rdl) under the first silicon layer, electrically coupling to the tsv. The present disclosure also provides a method of manufacturing a semiconductor device.
Taiwan Semiconductor Manufacturing Company Ltd.

Silicon substrate processing method, element embedded substrate, and channel forming substrate

A silicon substrate processing method includes forming an etching mask which has an opening portion, on a surface of a silicon substrate, forming an etching guide hole in the opening portion on the silicon substrate, and forming a through-hole which passes through the silicon substrate, by applying an etching treatment onto the silicon substrate in which the etching guide hole is formed. In the forming of the guide hole, the etching guide hole passing through the silicon substrate is formed by irradiating the opening portion with a laser beam a plurality of times, with a cooling period between each instance of irradiation with the laser beam..
Seiko Epson Corporation

Structure and capping cobalt contacts

A process for forming a conductive structure includes the formation of a self-aligned silicide cap over a cobalt-based contact. The silicide cap is formed in situ by the deposition of a thin silicon layer over exposed portions of a cobalt contact, followed by heat treatment to react the deposited silicon with the cobalt and form cobalt silicide, which is an effective barrier to cobalt migration and oxidation..
Globalfoundries Inc.

Substrate holding member

Provided is a substrate holding member that includes a base body and a plurality of protrusions formed on a surface of the base body and that is capable of suppressing generation of particles due to peeling-off or cracking of protective layers of the protrusions. A substrate holding member includes a base body and a plurality of protrusions formed on a surface of the base body.
Ngk Spark Plug Co., Ltd.

Etching method

Disclosed is a method for etching an etching target layer which contains silicon and is provided with a metal-containing mask thereon. The method includes: generating plasma of a first processing gas containing a fluorocarbon gas in a processing container that accommodates the etching target layer and the mask to form a fluorocarbon-containing deposit on the mask and the etching target layer; and generating plasma of a second processing gas containing an inert gas in the processing container to etch the etching target layer by radicals of the fluorocarbon contained in the deposit.
Tokyo Electron Limited

Semiconductor device manufacturing method

A method of manufacturing a semiconductor device includes the following processes. A metal film forming process in which a metal film including cobalt is formed on a surface of silicon.
Mie Fujitsu Semiconductor Limited

Precursors for silicon dioxide gap fill

A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench.
Entegris, Inc.

Mask blank, phase shift mask, manufacturing phase shift mask, and manufacturing semiconductor device

Provided is a mask blank including a phase shift film on a transparent substrate. This phase shift film includes a phase shift layer at least containing a transition metal and silicon, and a silicon layer, which is configured to attenuate exposure light with which the phase shift layer is irradiated, and the silicon layer is formed to be in contact with the substrate side of the phase shift layer.
Hoya Corporation

Silicon photonic device, optical polarisation beam coupler and optical waveguide coupler

A silicon photonic device comprises a silicon core having a core refractive index and a structure formed in the silicon core. The structure comprises a first refractive index variation pattern across the core in a first direction (x) and having a first modulation depth (h1), and a second refractive index variation pattern across the core in a second, orthogonal, direction (y) and having a second modulation depth (h2), less than the first modulation depth.
Telefonaktiebolaget Lm Ericsson (publ)

Single-mode optical fiber with ultra low attenuation and large effective area

An optical fiber with ultra-low attenuation and large effective-area includes a core layer and cladding layers. The cladding layers have an inner cladding layer surrounding the core layer, a trench cladding layer surrounding the inner cladding layer, an auxiliary outer cladding layer surrounding the trench cladding layer, and an outer cladding layer surrounding the auxiliary outer cladding layer.
Yangtze Optical Fibre And Cable Joint Stock Limited Company

Single mode optical fiber with ultra-low attenuation and bend insensibility

An optical fiber with ultra-low attenuation and bend insensitivity includes a core layer and cladding layers. The cladding layers have an inner cladding layer surrounding the core layer, a trench cladding layer surrounding the inner cladding layer, an auxiliary outer cladding layer surrounding the trench cladding layer, and an outer cladding layer surrounding the auxiliary outer cladding layer.
Yangtze Optical Fibre And Cable Joint Stock Limited Company

Novel design of enzyme-linked immunosorbent assay plates and systems and methods of use thereof

The present disclosure refers to an enzyme-linked immunosorbent assay (elisa) plate comprising at least one row of reaction chambers, wherein the reaction chambers in the same row are in fluid communication with each other. Also enclosed is a system for detecting one or more target analytes comprising an elisa plate as described herein, a plurality of magnetic beads and a magnet configured to cooperate with the magnetic beads.
Agency For Science, Technology And Research

Bearings for dryer seals, fire retardant high temperature dryer seals and related methods

Bearings for fire retardant dryer seals, fire retardant dryer seals, and related methods are provided herein. A fire retardant dryer seal can include an elongate, flexible base substrate having a first end and a second end.
Felters Of South Carolina, Llc

Silicon-based molten composition and manufacturing sic single crystal using the same

In equation (1) above, a is a first energy (a) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, b is a second energy (b) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, μ1 is a constant of −5.422, and μ2 is a constant of −9.097.. .

Gas-barrier plastic molded product and manufacturing same

An object of the present disclosure is to provide a gas barrier plastic molded body which is excellent in gas barrier properties and transparency and a method for producing the same. A gas barrier plastic molded body 90 according to the present disclosure includes a plastic molded body 91 and a gas barrier thin film 92 provided on a surface of the plastic molded body 91, and in the gas barrier plastic molded body, the gas barrier thin film 92 contains silicon (si), carbon (c), and oxygen (o) as constituent elements and has a region, in a which a main peak is observed, at a peak appearance position of binding energy of si—c when the gas barrier thin film is subjected to an x-ray photoelectron spectroscopic analysis under condition (1).
Kirin Company, Limited

Thin film diamond coating system and method

Disclosed herein is a transparent glass system that includes an optical grade silicon substrate, and a nanocrystalline diamond film on the silicon substrate, the diamond film deposited using a chemical vapor deposition system having a reactor in which methane, hydrogen and argon source gases are added. Further disclosed is a method of fabricating transparent glass that includes the steps of seeding an optical grade silicon substrate and forming a nanocrystalline diamond film on the silicon substrate using a chemical vapor deposition system having a reactor in which methane, hydrogen and argon source gases are added..

Increasing strength of an aluminum alloy

In an example of a method for increasing strength of an aluminum alloy, the aluminum alloy is formed in a molten state. The aluminum alloy includes from about 4 wt % to about 11 wt % silicon, from greater than 0.2 wt % to about 0.5 wt % chromium, from about 0.1 wt % to about 0.5 wt % magnesium, from about 0.01 wt % to about 0.1 wt % titanium, equal to or less than about 0.5 wt % iron, equal to or less than about 0.5 wt % manganese, and a balance of aluminum.
Gm Global Technology Operations Llc

Compositions and methods for the deposition of silicon oxide films

As defined herein.. .

High temperature resistant, two component, low viscosity silicone composition

A two part curable composition comprising organosiloxane polymer; water; an organosilane such as hexamethyldisilazane (hmds) or vinyltrimethoxysilane; crosslinker; adhesion promoter and catalyst; and optionally comprising plasticizer; colorant and filler. The first part can comprise organosiloxane polymer and water.
Henkel Ip & Holding Gmbh

Rubber composition for tire tread

Provided is a rubber composition for tire treads containing a diene rubber, from 1 to 20 parts by weight of a silica containing millable silicone rubber compound, and from 0.2 to 20 parts by weight of thermally expandable microcapsules, per 100 parts by weight of the diene rubber. A rubber hardness of the millable silicone rubber compound is from 10 to 50..
The Yokohama Rubber Co., Ltd.

Method of forming a gel having improved thermal stability

A gel having improved thermal stability is the hydrosilylation reaction product of (a) an organopolysiloxane having an average of at least 0.1 silicon-bonded alkenyl group per molecule and (b) a cross-linker having an average of at least 2 silicon-bonded hydrogen atoms per molecule. (a) and (b) react via hydrosilylation in the presence of (c) a hydrosilylation catalyst and (d) a heated reaction product of iron acetylacetonate.
Dow Corning Corporation

Hydrophobically modified nanocellulose crystal and a hydrophobic grafting modification of nanocellulose crystals

The present disclosure relates to a hydrophobically modified nanocellulose crystal and a method for hydrophobic grafting modification of nanocellulose crystals, comprising the steps: mixing the nanocellulose crystals with a saturated alkane, and stirring the resultant at room temperature or under a heating condition; while stirring, adding in sequence a polymethylhydrosiloxane containing a silicon-hydrogen bond and a catalyst; continuously stirring to complete the dehydrogenation reaction, then obtaining a mixed solution; and filtering the mixed solution by a polyvinylidene fluoride membrane, then drying it to complete the hydrophobic modification. A —si—o—c-chemical bonding is formed between the polymethylhydrosiloxane and the nanocellulose crystal in the method, enabling improvement of the hydrophobicity and water resistance of the nanocellulose crystal..
Petrochina Company Limited

Scratch resistant, easy-to-clean coatings, methods of producing the same and the use thereof

A computer or personal communication device or a similar device, comprising a cpu; and a display;wherein the display comprises;an array of optical elements;a touch sensor; and a glass cover having a coating that is oleophobic. The coating of the glass is a polymer having silicon, oxygen and carbon in the backbone.
Basf Se

Structures for packaging stress-sensitive micro-electro-mechanical system stacked onto electronic circuit chip

A packaged micro-electro-mechanical system (mems) device (100) comprises a circuitry chip (101) attached to the pad (110) of a substrate with leads (111), and a mems (150) vertically attached to the chip surface by a layer (140) of low modulus silicone compound. On the chip surface, the mems device is surrounded by a polyimide ring (130) with a surface phobic to silicone compounds.
Texas Instruments Incorporated

Silicone-based assembly layers for flexible display applications

The present invention is an assembly layer for a flexible device. The assembly layer is derived from precursors in eluding at least one of a physically cross-linked silicone elastomer and a covalently cross-linked silicone elastomer forming reagent mixture, and a mq resin.
3m Innovative Properties Company

Articles and methods for bonding sheets with carriers

Described herein are organosilicon modification layers and associated deposition methods and inert gas treatments that may be applied on a sheet, a carrier, or both, to control van der waals, hydrogen and covalent bonding between a sheet and carrier. The modification layers bond the sheet and carrier together such that a permanent bond is prevented at high temperature processing as well as maintaining a sufficient bond to prevent delamination during high temperature processing..
Corning Incorporated

Halogen-free thermosetting resin composition, prepreg and laminate for printed circuit boards using the same

The present invention relates to a halogen-free thermosetting resin composition, a prepreg and a laminate for printed circuit boards using the same. The halogen-free thermosetting resin composition comprises, based on 100 parts by weight of organic solids, (a) from 16 to 42 parts by weight of a halogen-free epoxy resin, (b) from 1.5 to 4.8 parts by weight of a compound containing dihydrobenzoxazine ring; (c) from 10 to 28 parts by weight of a phosphorus-containing bisphenol curing agent, wherein the phosphorus-containing bisphenol curing agent has a weight average molecular weight of 1000-6500, and (d) from 30 to 70 parts by weight of silicon dioxide.
Shengyi Technology Co., Ltd.

Machining tool

The present invention relates to a machining tool having a substrate surface made of a hard metal or a ceramic material, said substrate surface containing hard material particles on the basis of carbide and/or nitride and/or oxide that are embedded in a cobalt-containing binder matrix, and the substrate surface being smoothened. The substrate surface of the machining tool can be smoothened by way of a treatment with an ion beam that consists of monomer ions of at least one cation species, the cation species being mono-or poly-charged and being selected from the group consisting of: cations of the main group elements lithium, boron, aluminum, gallium, carbon, silicon, germanium, nitrogen, phosphorus and oxygen; and cations of the transition metals titanium, zirconium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, iron, cobalt, nickel and copper..
Guehring Kg

Aluminum alloy for forming an axisymmetric article

A vehicle wheel, or other axisymmetric shaped article, is formed of an aluminum-based alloy by a combination of a liquid forging step of a pre-form shape of the wheel and a subsequent solid-state flow forming step to complete the specified shape of the wheel. An aluminum-based alloy, containing specified amounts of zinc, silicon, and magnesium is devised for use in the forming process.
Gm Global Technology Operations Llc

Hydrotreating catalyst containing metal organic sulfides on doped supports

A catalyst comprising: a catalyst support; at least one group vib metal component; at least one group viii metal component; at least one mercapto-carboxylic acid; wherein the catalyst support contains at least one dopant comprising either boron, and/or silicon, and/or phosphorusin the range of about 1 to about 13 wt %, expressed as an oxide and based on the total weight of the catalyst for each dopant added; and wherein the amount of the at least one mercapto-carboxylic acid is in the amount from about 0.4 to about 3 equivalents to the sulfur amount necessary for forming sulfides of the group vi and viii components.. .
Albemarle Europe Sprl

Chromium- and nickel-free hydrogenation of hydroformylation mixtures

The invention is concerned with catalysts for heterogeneous hydrogenation of oxo process aldehydes. The problem addressed by the invention is that of developing a catalyst containing neither chromium nor nickel.
Evonik Degussa Gmbh

Reactor component placement inside liner wall

Reaction chamber liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed. The liners include an aperture and a cavity configured to receive a reactor component, such as a probe, a sensor, a nozzle, a feed line, a sampling line, a heating/cooling component, or the like.
Rec Silicon Inc

Removable rubberized pointe shoe caps for non-traditional studio and other flooring

Removable rubberized pointe shoe caps are provided for using ballet pointe shoes on non-traditional studio and other flooring. An exemplary removable cap for a ballet pointe shoe comprises a rubberized material having a shape that is a substantial replica of an exterior portion of a particular ballet pointe shoe of a dancer, wherein the rubberized material removably covers only (i) a front portion of the particular ballet pointe shoe that includes a box portion, and (ii) a portion of a bottom of the particular ballet pointe shoe, and wherein the rubberized material has a substantially tight fit with respect to the front portion and the bottom portion of the particular ballet pointe shoe.

Manufacturing silicone-coated glove

A manufacturing method of a silicone-coated glove, comprises: a knitting step (s100) of forming a glove; a water-repellency treatment solution preparation step (s200) of forming a water-repellency treatment solution by diluting a silicone-containing water-repellent agent for fabrics with water; a water-repellency treatment solution dipping step (s300) of dipping the knitted glove in the water-repellency treatment solution; a water-repellent coating formation step (s400) of forming, on a fabric layer (10) of the glove, a water-repellent coating (20) containing silicone by dehydrating the glove dipped in the water-repellency treatment solution and then drying the glove at 80-180° c.; a dipping step (s500) of forming a silicone coating (30) by dipping the glove having the water-repellent coating (20) in a silicone coating solution; and a drying step of hardening the glove having the silicone coating (30).. .
Heungje International Corp.

Silicone scrub brush glove for dishwashing

Provided is a silicone scrub brush glove for dishwashing which is entirely made of silicone and has a protrusion-type scrub brush which is made of silicone and integrated with the glove into a single piece on the area of the palm and the bottom surface of the fingers. The silicone scrub brush glove has advantageous effects of resolving or improving the problems involved in existing rubber gloves..

Rf interconnect

We describe below a structure and process that uses through-silicon-vias and wafer-to-wafer bonding to create transmission lines. The method may require one electroplating step, 3 etch steps, 4 lithography steps, one grind and polish step, and one wafer bonding step, totaling ten process steps per transmission line layer..
Innovative Micro Technology

Earbud cover

An earbud cover is a hollow shell with an interior and exterior. The interior allows for the insertion of an earbud body.

Power device for high voltage and high current switching

An apparatus includes a circuitry to perform a high current and/or a high voltage switching. The circuitry includes a first gallium nitride (gan) on a silicon (si) substrate lateral field effect transistor.
Visic Technologies Ltd.

Central control system

Provided is a structure which is capable of central control of an electric device and a sensor device and a structure which can reduce power consumption of an electric device and a sensor device. A central control system includes at least a central control device, an output unit, and an electric device or a sensor device.
Semiconductor Energy Laboratory Co., Ltd.

Catalyst for oxygen reduction reaction comprising iridium-based alloy

Provided is a catalyst for an oxygen reduction reaction, including an alloy in which two metals are mixed, in which the corresponding alloy is an alloy of iridium (ir); and silicon (si), phosphorus (p), germanium (ge), or arsenic (as). The corresponding catalyst for the oxygen reduction reaction may have excellent price competitiveness while exhibiting a catalytic activity which is equal to or similar to that of an existing pt catalyst.
Korea Institute Of Science And Technology

Negative electrode including silicon nanoparticles having a carbon coating thereon

An example of a negative electrode includes silicon nanoparticles having a carbon coating thereon. The carbon coating has an oxygen-free structure including pentagon rings.
Gm Global Technology Operations Llc

Lithium ion secondary battery

A lithium ion secondary battery having more improved cycle characteristics is provided. The present invention relates to a lithium ion secondary battery having a negative electrode comprising a graphite and a silicon oxide having a composition represented by siox (0<x≤2), wherein ag/as is within a range of 0.6 or more and 1.6 or less when a particle number average aspect ratio of the graphite is defined as ag and a particle number average aspect ratio of the silicon oxide is defined as as..
Nec Corporation

Laminate structure, piezoelectric element, and manufacturing piezoelectric element

A piezoelectric element is obtained using a method including: preparing a first structure; preparing a second structure; disposing a first facing electrode layer of the first structure to face a first surface of a vibration plate substrate and bonding the first structure to the first surface of the vibration plate substrate; processing the vibration plate substrate into a vibration plate by polishing or etching a second surface of the vibration plate substrate to which the first structure is bonded; preparing a laminate structure by disposing a second facing electrode layer of the second structure to face an exposed surface of the vibration plate and bonding the second structure to the vibration plate; and removing at least a part of a first silicon substrate of the first structure and a second silicon substrate of the second structure from the laminate structure.. .
Fujifilm Corporation

Method of manufacturing solar cell

A method of manufacturing a solar cell, the method includes forming a protective film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon, wherein the forming of the protective film includes a heat treatment process performed at a heat treatment temperature of approximately 600 degrees celsius or more under a gas atmosphere including nitrogen, and wherein the heat treatment process includes: a main section, during which the heat treatment temperature is maintained, a temperature increase section before the main section, during which an increase in temperature occurs from an introduction temperature to the heat treatment temperature, and a temperature reduction section after the main section, during which a decrease in temperature occurs from the heat treatment temperature to a discharge temperature.. .
Lg Electronics Inc.

Solar cell and solar cell manufacturing method

A solar cell includes a p-type impurity diffusion layer formed on one side of an n-type single-crystal silicon substrate, an n-type impurity diffusion layer formed on the opposite side of the substrate with an n-type impurity element at a higher concentration than the substrate, and having a first layer with an n-type impurity element diffused at a first concentration, and a second layer with an n-type impurity element diffused at a second concentration lower than the first concentration, on-p-type-impurity-diffusion-layer electrodes formed on the p-type impurity diffusion layer, and on-n-type-impurity-diffusion-layer electrodes formed on the first layer. The concentration of the n-type impurity element at a surface of the first layer is between 5×1020 atoms/cm3 and 2×1021 atoms/cm3 inclusive, and the concentration of the n-type impurity element at a surface of the second layer is between 5×1019 atoms/cm3 and 2×1020 atoms/cm3 inclusive..
Mitsubishi Electric Corporation

Semi-flexible solar module using crystaline solar cells and fabrication thereof

A semi-flexible solar module including: a front layer, for example, etfe, having an ultra-violet reflecting material; one or more impact cushion layers, for example, eva; a solar cell layer comprising crystalline silicon solar cells; a support layer comprising a semi-flexible material configured to support the solar cell layer, for example pet; and a back layer, for example, tpt, wherein none of the layers is formed of glass.. .
Canadian Solar Solutions Inc.

Solar cell module

A solar cell module includes a first solar cell including, in the following order, a single-crystalline silicon substrate, a conductive silicon layer, and a back side transparent electrode layer, where the conductive silicon layer and the back side transparent electrode layer are disposed on a back side of the single-crystalline silicon substrate; an encapsulant; and a flexible metal foil disposed between the back side transparent electrode layer and the encapsulant. The flexible metal foil is in contact with the back side transparent electrode layer in a non-bonded state.
Kaneka Corporation

Method of patterning an amorphous semiconductor layer

Methods of patterning an amorphous semiconductor layer according to a predetermined pattern via laser ablation with a pulsed laser having a laser wavelength are disclosed. In one aspect, a method may include providing the amorphous semiconductor layer on a substrate, providing a distributed bragg reflector on the amorphous semiconductor layer, wherein the distributed bragg reflector is reflective at the laser wavelength, providing an absorbing layer on the distributed bragg reflector, wherein the absorbing layer is absorptive at the laser wavelength, patterning the absorbing layer by laser ablation, in accordance with the predetermined pattern, patterning the distributed bragg reflector by performing an etching step using the patterned absorbing layer as an etch mask, and etching the amorphous semiconductor layer using the patterned distributed bragg reflector as an etch mask.
Katholieke Universiteit Leuven

Solar cell composite utilizing molecule-terminated silicon nanoparticles

Nano particles obtained by terminating surfaces of silicon nanoparticles having a diameter of not more than 5 nm with molecules of hydrocarbon are disposed on the outermost surface of a semiconductor forming a p-n junction solar cell that uses silicon or the like. These silicon nanoparticles absorb energy of ultraviolet light, and the energy is transferred to the p-n junction solar cell.

Method of manufacturing lower temperature polycrystal silicon thin film transistor array substrate

A method of manufacturing an array substrate, the method including the steps of: a) defining a heavily doped region and a lightly doped region of a source electrode of an n-channel area, and a heavily doped region and a lightly doped region of a drain electrode of the n-channel area by using a first stripped photomask; b) defining a doped region of a source electrode of a p-channel area and a doped region of a drain electrode of the p-channel area by using a second stripped photomask; c) defining a pixel region, a contact hole region by using a third stripped photomask; and d) defining a metal electrode region by using a fourth stripped photomask.. .
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Fdsoi ldmos semiconductor device

Semiconductor devices are provided that use both silicon on insulator region and bulk region of a fully depleted silicon on insulator (fdsoi) device. For example, a semiconductor device includes a drain region that is disposed above a first type well and a first drain extension region that is disposed above the first type well and laterally spaced apart from the drain region.
Broadcom Corporation

Vtfet devices utilizing low temperature selective epitaxy

Low temperature epitaxial silicon deposition for forming the top source or drain regions of vtfet structures. The methods generally include epitaxially growing a silicon layer with a dopant at a temperature less 500° c.
International Business Machines Corporation

Parasitic channel mitigation using elemental diboride diffusion barrier regions

Iii-nitride materials are generally described herein, including material structures comprising iii-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates..
Macom Technology Solutions Holdings, Inc.

Iii-nitride semiconductor structures comprising spatially patterned implanted species

Iii-nitride materials are generally described herein, including material structures comprising iii-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates..
Macom Technology Solutions Holdings, Inc.

Gap fill of metal stack in replacement gate process

A method for fabricating a semiconductor device comprises forming a replacement gate structure on a semiconductor layer of a substrate. The replacement gate structure at least including a polysilicon layer.
International Business Machines Corporation

Ring-type field effect transistor for terahertz wave detection, which uses gate metal as antenna

A ring-type fet may include a silicon base, a source formed on a portion of the silicon base through doping, a channel formed to encompass the source on a plane, a drain formed outside the channel, a dielectric layer formed on the source, the channel and the drain, and a gate provided on the dielectric layer, wherein a center of the source is spaced apart from a center of the channel, and the gate is formed of a metal material, disposed above the channel and configured to cover an upper face of the channel and overlap a portion of the source and a portion of the drain.. .
Unist (ulsan National Institute Of Science And Technology)

Semiconductor device and manufacturing the same

A semiconductor device according to an exemplary embodiment of the present invention includes: a current applying region; and a termination region disposed at an end portion of the current applying region. The termination region includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a p type termination structure disposed in the n− type layer; and a lower gate runner disposed on the p type termination structure such that the lower gate runner overlaps the p type termination structure..
Hyundai Motor Company

Silicon germanium alloy fin with multiple threshold voltages

A semiconductor structure is provided that includes a strained silicon germanium alloy fin structure and a relaxed silicon germanium alloy fin structure located in different device regions of a substrate. The relaxed silicon germanium alloy fin provides a higher threshold voltage than the strained silicon germanium alloy fin structure..
International Business Machines Corporation

Low noise ingaas photodiode array

A photodiode pixel structure for imaging short wave infrared (swir) and visible light built in a planar structure and may be used for one dimensional and two dimensional photodiode arrays. The photodiode arrays may be hybridized to a read out integrated circuit (roic), for example, a silicon complementary metal-oxide-semiconductor (cmos) circuit.
Princeton Infrared Technologies, Inc.

Solid state image pickup device and producing solid state image pickup device

Forming a back-illuminated type cmos image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark.
Sony Corporation

Ltps array substrate and producing the same

An ltps array substrate includes a substrate; a gate disposed on the substrate; a first insulating layer, a polycrystalline silicon layer, and a second insulating layer sequentially disposed on the gate; a source and a drain disposed on the second insulating layer and are electrically connected to the polycrystalline silicon layer via first contact holes formed in the second insulating layer; a passivation layer disposed on the source, the drain, and the second insulating layer and including a second contact hole formed therein to expose a surface of the drain; a third insulating layer disposed on the passivation layer in such a way that the second contact hole is exposed outside the third insulating layer; and a pixel electrode disposed on the third insulation layer and electrically connected to the drain via the second contact hole.. .
Wuhan China Star Optoelectronics Technology Co., Ltd

Method for manufacturing thin film transistor and display panel

In the present invention, a gate electrode is formed on a substrate surface, and an insulation film is formed on the substrate surface whereon the gate electrode has been formed. A first amorphous silicon layer is formed on the substrate surface whereon the insulation film has been formed.
Sakai Display Products Corporation

Display device

A display device comprising: a first tft using silicon (si) and a second tft using oxide semiconductor are formed on a substrate, a distance between the silicon (si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a drain source electrode of the first tft connects with the silicon (si) via a first through hole, a drain source electrode of the second tft connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an alo layer is formed on the metal films and the oxide semiconductor, the second source drain electrode and the metal films are connected via the second through hole formed in the alo layer.. .
Japan Display Inc.

Ltps array substrate and manufactoring method thereof

A method for manufacturing a ltps array substrate includes: forming a source electrode and a drain electrode on a substrate, forming a poly-silicon layer in a first region and a second region of the substrate including the source electrode and the drain electrode, such that the poly-silicon layer of the first region has a thickness greater than that of the second region and the poly-silicon layer of the first region partially covers the source electrode and the drain electrode; passivating a surface of the poly-silicon layer in order to turn a part of the poly-silicon layer of the second region and the first region that is adjacent to the surface into an insulating layer; and forming a gate electrode on the insulating layer between the source electrode and the drain electrode. The ltps technical process is simple and can reduce the producing costs..
Wuhan China Star Optoelectronics Technology Co., Ltd

Semiconductor device and manufacturing the same

A semiconductor device using an soi (silicon on insulator) substrate, capable of preventing malfunction of misfets (metal insulator semiconductor field effect transistor) and thus improving the reliability of the semiconductor device. Moreover, the parasitic resistance of the misfets is reduced, and the performance of the semiconductor device is improved.
Renesas Electronics Corporation

Three dimension integrated circuits employing thin film transistors

An integrated circuit which enables lower cost yet provides superior performance compared to standard silicon integrated circuits by utilizing thin film transistors (tfts) fabricated in beol. Improved memory circuits are enabled by utilizing tfts to improve the density and access in a three dimensional circuit design which minimizes die area.
3b Technologies, Inc.

Electrostatic protection device of ldmos silicon controlled structure

An electrostatic protection device of an ldmos silicon controlled structure comprises a p-type substrate (310), an n-well (320) and a p-well (330) on the substrate, a gate electrode (340) overlapping on the p-well (330) and extending to an edge of the n-well (320), a first n+ structure and a first p+ structure provided in the n-well (320), and a second n+ structure and a second p+ structure provided in the p-well(330), the first n+ structure being a drain electrode n+ structure (322), the first n+ structure being a drain electrode n+ structure (322), the first p+ structure being a drain electrode p+ structure (324), the second n+ structure being a source electrode n+ structure (332), the second p+ structure being a source p+ structure (334), and a distance from the drain electrode p+ structure (324) to the gate electrode (340) being greater than a distance from the drain electrode n+ structure (322) to the gate electrode (340).. .
Csmc Technologies Fab2 Co., Ltd.

Direct bandgap semiconductor bonded to silicon photonics

According to an example of the present disclosure a direct bandgap (dbg) semiconductor structure is bonded to an assembly comprising a silicon photonics (sip) wafer and a complementary metal-oxide-semiconductor (cmos) wafer. The sip wafer includes photonics circuitry and the cmos wafer includes electronic circuitry.
Hewlett Packard Enterprise Development Lp

Electronic circuit board, laminated board, and manufacturing electronic circuit board

An electronic circuit board includes: electronic components; a silicon board that is plate shaped, includes a wiring pattern provided on at least one of a surface and a reverse surface thereof, and includes recessed portions where the electronic components are individually mounted; and a supporting board that is layered over the reverse surface of the silicon board, and includes a wiring pattern provided on at least one of a surface and a reverse surface thereof. Side faces of the recessed portions are perpendicular to the surface of the silicon board, the wiring pattern is connected to at least one of the electronic components mounted in the recessed portions, via at least one of a via and a bottom surface electrode provided in of the at least one of the recessed portions, and the recessed portions penetrate through the silicon board..
Olympus Corporation

Floating package stiffener

Embodiments herein may relate to a package with one or more layers. A silicon die may be coupled with the one or more layers via an adhesive.
Intel Corporation

Porous silicon relaxation medium for dislocation free cmos devices

A method for forming cmos devices includes masking a first portion of a tensile-strained silicon layer of a soi substrate, doping a second portion of the layer outside the first portion and growing an undoped silicon layer on the doped portion and the first portion. The undoped silicon layer becomes tensile-strained.
International Business Machines Corporation

Enhancing robustness of soi substrate containing a buried n+ silicon layer for cmos processing

A silicon buffer layer selected from undoped silicon, p-doped silicon or a multilayered stack of, in any order, undoped silicon and p-doped silicon is provided between an n+ silicon layer and an oxide layer of an soi substrate. The presence of the silicon buffer layer reduces electron injection into the oxide layer during device processing which requires an electric field..
International Business Machines Corporation

Plasma etching method

A plasma etching method for etching a film containing a tungsten element using plasma, wherein the film containing a tungsten element is etched by using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.. .
Hitachi High-technologies Corporation

Substrate processing method

A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer..
Tokyo Electron Limited

Screen-printable boron doping paste with simultaneous inhibition of phosphorus diffusion in co-diffusion processes

The present invention relates to a novel printable boron doping paste in the form of a hybrid gel based on precursors of inorganic oxides, preferably of silicon dioxide, aluminium oxide and boron oxide, in the presence of organic polymer particles, where the pastes according to the invention can be used in a simplified process for the production of solar cells, where the hybrid gel according to the invention functions both as doping medium and as diffusion barrier.. .
Merck Patent Gmbh

Method for manufacturing bonded soi wafer

A method for manufacturing a bonded soi wafer, including depositing a polycrystalline silicon layer on a base wafer, forming an insulator film on a bond wafer, bonding the bond wafer and a polished surface of the silicon layer with the insulator film interposed, and thinning the bond wafer, wherein a silicon single crystal wafer having a resistivity of 100 Ω-cm or more is the base wafer, the step of depositing the silicon layer includes a stage of forming an oxide film on the surface of the base wafer, and the silicon layer is deposited between 1050° c. And 1200° c.
Shin-etsu Handotai Co., Ltd.

Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures

A method of preparing a self-aligned block (sab) structure is described. The method includes providing a substrate having raised features defined by a first material containing silicon nitride and a second material containing silicon oxide formed on side walls of the first material, and a third material containing an organic material covering some of the raised features and exposing some raised features according to a block pattern formed in the third material.
Tokyo Electron Limited

Method for manufacturing poly-silicon layer, thin film transistor, array substrate and display device

The present disclosure provides a method for manufacturing a poly-silicon layer. The method for manufacturing the poly-silicon layer comprises steps of: depositing a porous metal film on a microcrystalline silicon layer of a base substrate; immersing the base substrate deposited with the porous metal film into an etching liquid comprising hydrogen fluoride and oxidants for etching the microcrystalline silicon layer; after the microcrystalline silicon layer has been etched successfully, removing the metal film with an acid solution and washing the microcrystalline silicon layer with a deionized water subsequently so as to obtain a processed microcrystalline silicon layer; and depositing an amorphous silicon layer on the processed microcrystalline silicon layer and subjecting the amorphous silicon layer to laser annealing treatment so as to obtain the poly-silicon layer.
Boe Technology Group Co., Ltd.

Precursors and flowable cvd methods for making low-k films to fill surface features features

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable cvd reactor; introducing into the reactor at least one silicon-containing compound and at least one multifunctional organoamine compound to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon carbonitride coating has excellent mechanical properties..
Versum Materials Us, Llc

Memory device comprising an electrically floating body transistor

A memory cell comprising includes a silicon-on-insulator (soi) substrate, an electrically floating body transistor fabricated on the silicon-on-insulator (soi) substrate, and a charge injector region. The floating body transistor is configured to have more than one stable state through an application of a bias on the charge injector region..
Zeno Semiconductor, Inc.

Under screen sensor assembly

A sensor assembly that includes a silicon substrate and a sensor integrally formed on or in its top surface. Bond pads are formed at the substrate top surface and electrically coupled to the sensor.
Optiz, Inc.

Method and computer program product for controlling the positioning of patterns on a substrate in a manufacturing process

In a method for controlling the positioning of patterns on a substrate in a manufacturing process at least one registration measurement is conducted with a registration tool on at least one pattern formed in at least one layer on the substrate by a previous process step of the manufacturing process. From the registration measurement a position of the at least one pattern in a coordinate system is determined.
Kla-tencor Corporation

Thermally-conductive rubber material, belt for image forming apparatus, and image forming apparatus

According to one embodiment, a thermally-conductive rubber material includes silicone rubber, carbon fiber, and spherical graphite. The thermally-conductive rubber material further includes carbon fiber, and the average diameter d of the carbon fiber and the average primary particle diameter r of the spherical graphite satisfy [r/d]≤[½]..
Toshiba Tec Kabushiki Kaisha

Electrostatically charged image developing toner and electrostatically charged image developing two-component developer

An electrostatically charged image developing toner includes a particulate toner matrix containing an external additive on the surface of the particulate toner matrix. The external additive includes silica particles a and silica particles b.
Konica Minolta, Inc.

Tetracarboxylic acid diester compound, polymer of polyimide precursor and producing same, negative photosensitive resin composition, patterning process, and forming cured film

Wherein, the dotted line represents a bonding, y1 represents an organic group with a valency of k+1, rs represents a group containing at least one silicon atom, “k” represents 1, 2 or 3, and “n” represents 0 or 1. There can be provided a tetracarboxylic acid diester compound which can lead a polymer of a polyimide precursor capable of using a base resin of a negative photosensitive resin composition which is capable of forming a fine pattern and giving high resolution, a polymer of a polyimide precursor obtained by using the tetracarboxylic acid diester compound and a method for producing the same..

Display device

A display device is disclosed, which includes: a first substrate; a first transistor disposed on the first substrate, wherein the first transistor comprises a first semiconductor layer; a second transistor disposed on the first substrate, wherein the second transistor includes a second semiconductor layer; and a first insulating layer disposed under the first semiconductor layer; wherein a thickness of the first insulating layer is greater than or equal to 200 nm and less than or equal to 500 nm; and wherein one of the first semiconductor layer and the second semiconductor layer comprises a silicon semiconductor layer, and the other comprises an oxide semiconductor layer.. .
Innolux Corporation

Method for producing contact lenses with wearing comfort

The invention is related to a method for producing silicone hydrogel contact lenses with a stable lubricious hydrogel coating thereon providing a low surface friction. A method of the invention comprises forming a plasma-reactive hydrophilic polymer hybrid base coating having reactive functional groups on a silicone hydrogel contact lens and heating the silicone hydrogel contact lens with the hybrid base coating in an aqueous solution of a water-soluble and thermally crosslinkable hydrophilic polymeric material to form a stable lubricious hydrogel coating thereon..
Novartis Ag

Silicone-based hydrophilic copolymer and hydrogel compositions comprising the same

A hydrophilic siloxane copolymer of siloxane and hydrophilic organic monomer/s the copolymers can be functionalized to make them capable of undergoing further polymerization by thermal or actinic radiations. The hydrophilicity of these polymers can be varied by varying the siloxane versus organic monomer ratio thereby going from water dispersible to soluble states.
Momentive Performance Materials Inc.

Neutron imager with spaced diamond detector arrays

A neutron detector system, with a detector having a pair of spaced diamond detector layers, sandwiched between outer silicon layers. In response to incident neutrons, the detector system measures pulse heights and response times, and from those measurements, calculates the carbon recoil energy and time of flight of scattered neutrons.
Southwest Research Institute

Monitoring excimer-laser annealing process

A method of evaluating a crystallized silicon layer on a substrate includes injecting light into the substrate in such a way that it is wave-guided by the substrate. Wave-guided injected light is diffracted out of the substrate by periodic features of the silicon layer.
Coherent Lasersystems Gmbh & Co. Kg

Method for maintaining contained volume of molten material from which material is depleted and replenished

A main crucible of molten semiconductor is replenished from a supply crucible maintained such that there are always two phases of solid and liquid semiconductor within the supply crucible. Heat added to melt the solid material results in the solid material changing phase to liquid, but will not result in any significant elevation in temperature of the liquid within the supply crucible.
1366 Technologies, Inc.

Silicon-based films and methods of forming the same

Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain <50 atomic % of silicon.
Versum Materials Us, Llc

Articles for high temperature service and methods for making

Embodiments of the present disclosure are directed to an article and methods of forming the article. The article includes a thermal barrier coating disposed on a substrate.
General Electric Company

Method for processing rolling circle amplification products

This disclosure provides, among other things, a method for processing a membrane comprising rolling circle amplification (rca) products. In some embodiments, this method may comprise: (a) obtaining a porous capillary membrane that comprises fluorescently labeled rca products that are in or on the membrane; (b) depositing a curable polymer onto the membrane; and (c) curing the curable polymer to encapsulate the rca products in a solid.
Vanadis Diagnostics

Molecular delivery with nanowires

A molecular delivery system including a plurality of nanowires (e.g., si nws), each of the nanowires having a surface layer formed of a silicon-containing material and a covalently bound linker (e.g., silane linker) attached to the surface layer and optionally including a substrate to which the nanowires are adhered or a molecule to be delivered attached to the linker. Also disclosed is a method of delivering into a cell an exogenous molecule..
President And Fellows Of Harvard College

Silicone adhesive composition and an adhesive tape

One of the purposes of the present invention is to provide a silicone adhesive composition which provides an adhesive layer having an excellent antistatic property and which has an excellent strength of bond to a tape substrate and, therefore, when an adhesive tape or film having the adhesive layer is peeled from a tape-stuck body, less residual adhesive occurs on the tape-stuck body. The other purpose of the present invention is to provide a silicone adhesive composition which cures well by heating for a short time, particularly for less than 5 minutes, to provide an adhesive layer having an excellent antistatic property.
Shin-etsu Chemical Co., Ltd.

Method for preparing silicone-treated films of polyethylene terephthalate (pet)

A method for preparing silicone-treated films of pet in which the silicone treatment step occurs simultaneously with the extrusion of the film (“in-line”).. .
Siliconature S.p.a.

Aqueous inkjet ink, inkjet recording method, and inkjet recording device

An aqueous inkjet ink includes at least water, a coloring material, a water-soluble organic solvent component, a surfactant, resin particles, and a water-soluble carbodiimide compound that acts as a crosslinking component. The surfactant is a silicone-based surfactant.
Roland Dg Corporation

Organic-inorganic hybrid

An organic-inorganic hybrid forming composition, which is capable of forming an organic-inorganic hybrid with less yellow coloring than conventional ones, while maintaining the surface hardness. The organic-inorganic hybrid forming composition includes: a) a condensate of an organosilicon compound represented by the formula (i): rnsix4-n (i) (where r represents an organic group having a carbon atom directly bonded to si in the formula; x each independently represents a hydroxyl group or a hydrolyzable group; and n represents 1 or 2, and when n is 2, each r is the same or different), which is obtained by condensing the organosilicon compound represented by the formula (i) in the presence of a zirconium complex; b) an electromagnetic ray-curable compound; and c) a photopolymerization initiator..
Nippon Soda Co., Ltd.

Waterproof silicone emulsion, waterproof board exhibiting excellent crack resistance, and manufacturing method therefor

Embodiments relate to a waterproof silicone emulsion, a waterproof board exhibiting excellent crack resistance, and a manufacturing method therefor and, more specifically, to a waterproof silicone emulsion including a silicone oil and an emulsifier, a waterproof board including a cured product of an aqueous gypsum slurry, and a manufacturing method therefor. The aqueous gypsum slurry includes calcium sulfate hemihydrate, a silicone oil and a specific catalyst, and exhibits excellent crack resistance and a low total absorptance..
Kcc Corporation

Dual temperature curable silicone compositions, methods of manufacture, and articles prepared therefrom

Dual temperature curable silicone compositions, articles made from such compositions, and methods for the manufacture and use thereof. In particular, a dual temperature curable silicone composition is manufactured from a composition comprising a vinyl silicone; a silicone hydride-containing crosslinker, a platinum-containing catalyst; and a peroxide catalyst..
Rogers Corporation

Organosilicone composition, reflective coating, preparation method therefor and photovoltaic module comprising same

A silicone composition, a reflective coating and a preparation method therefor, and a photovoltaic assembly comprising the reflective coating are disclosed. The silicone composition comprises a base polymer component, a catalyst, a cross-linking agent and reflective particles, wherein the base polymer component, the catalyst and the cross-linking agent are not mixed simultaneously before use; the base polymer component comprises 100 parts by weight of a polymethylsiloxane having at least two si-vi bonds per molecule, 5-15 parts by weight of a hydrogenated epoxy resin or cycloaliphatic epoxy resin-modified polymethylvinylsiloxane terminated with a hydroxyl group, 10-20 parts by weight of a siloxane resin having at least two si-vi bonds; and the cross-linking agent is a polyorganosiloxane having at least two si—h bonds..
Byd Company Limited

Method for producing organosilicon compounds having amino acid groups

The present invention relates to a method for producing amino acid group-containing organosilicon compounds (o), wherein the epoxy group-bearing organosilicon compounds are reacted with a stoichiometric excess of amino acids or the salts thereof in the presence of an alcohol.. .
Wacker Chemie Ag

(meth)acrylate manufacturing method

The present invention provides a (meth)acrylate manufacturing method characterized in that when manufacturing a (meth) acrylate by an ester exchange reaction between an alcohol and a monofunctional (meth)acrylate using catalyst a and catalyst b together, contact treatment of the ester exchange reaction product with adsorbent c is performed. Catalyst a: one or more kinds of compounds selected from a group consisting of cyclic tertiary amines with an azabicyclo structure and salts or complexes thereof, amidine and salts or complexes thereof, compounds with a pyridine ring and salts or complexes thereof, phosphines and salts or complexes thereof, and compounds with a tertiary diamine structure and salts or complexes thereof.
Toagosei Co., Ltd.

Hydrogen separation membrane

A hydrogen separation membrane employs a dense liquid metal separator deposited on a support structure for providing a membrane film allowing passage of hydrogen to be used in industrial processes and consumer applications benefiting from pure hydrogen. A support structure such as silicon carbide is non-reactive with the molten metal, thus withstanding the high temperatures associated with hydrogen producing processes.

Thermal transfer sheet, producing thermal transfer sheet, thermal transfer image-receiving sheet, producing thermal transfer image-receiving sheet, forming printed product, and printed product

In a thermal transfer sheet in which a transfer layer is provided on a substrate, the transfer layer has a layered structure in which a receiving layer, an intermediate layer, and a masking layer are layered in this order from the side of the substrate, the receiving layer is a solvent-based receiving layer containing a solvent-based resin and a silicone oil, the intermediate layer is a water-based intermediate layer containing a water-based resin, and the masking layer is a solvent-based masking layer containing a solvent-based resin and a colorant.. .
Dai Nippon Printing Co., Ltd.

Method of manufacturing fluorescent silicone film

A method of manufacturing a fluorescent silicone film contains: steps of: a. Mixing optical silicone and fluorescent powders so as to produce a mixture, and adding liquid to the mixture; b.

Mold release agent composition for use in casting

The present invention provides a novel mold release agent composition which can cope with a higher temperature range than that of the conventional mold release agent composition. That is, a mold release agent composition for use in casting of the present invention contains a silicone oil and a solvent, wherein the silicone oil contains 30% by mass or more of a first silicone oil represented by the formula (1) and 70% by mass or less of a second silicone oil represented by the formula (2), with respect to the total amount of the silicone oil.
Yushiro Chemical Industry Co., Ltd.

Copper-supported zeolite and exhaust gas purification catalyst containing the zeolite

Disclosed herein is a copper-supported zeolite containing a zeolite having a framework structure including silicon atoms, phosphorus atoms, and aluminum atoms, and copper supported on the zeolite, wherein the copper-supported zeolite satisfies (1) to (3): (1) an amount of copper (in terms of copper atoms) supported on the copper-supported zeolite is 1.5% by weight or more and 3.5% by weight or less, (2) the copper-supported zeolite has an uv-vis-nir absorption intensity ratio of less than 0.35 as determined by a formula (i) below: intensity (22,000 cm−1)/intensity (12,500 cm−1) . .
Mitsubishi Chemical Corporation

Porous silicon microparticle-based cancer vaccines and methods for potentiating anti-tumor immunity

Porous silicon (psi) microparticles (psm) are disclosed, which provide an important advance in the area of cancer immunotherapeutics and molecular nanomedicine. In particular, potent psm-based adjuvants are disclosed for dendritic cell-based vaccines compositions, and methods for their use in a variety of cancer immunotherapies.
The Methodist Hospital

A hair conditioning composition and a treating hair

The present disclosure relates to a hair conditioning composition comprising a polyoxyalkylenated aminosilicone, a monoalkyl quaternary ammonium cationic surfactant and dialkyl acyloxyethyl hydroxyethylmonium cationic surfactant, and to a method of treating hair using the hair conditioning composition.. .
Henkel Ag & Co. Kgaa

Water in oil emulsion providing skin mattity and true color

The present invention relates to a water-in-oil cosmetic composition containing at least one hydrophobically treated powder, at least two mattifying powders, at least one silicone resin, and at least one oil absorbing powder, which impart true color and mattity, while also reducing dullness, whiteness, and/or ashiness of the keratinous substrate, in particular skin, to which they have been applied.. .
L'orÉal

Sunless tanning composition comprising soluble and insoluble silicone-containing polymers

In certain aspects, the present disclosure relates to sunless tanning compositions and methods for using the same. It has been found that using a combination of water soluble silicones and/or water dispersible silicones may improve the deposition of certain cosmetic ingredients and/or form a protective layer over certain cosmetic ingredients.
Australian Gold, Llc

Dry electrode for bio-potential and skin impedance sensing and use

An electrode configured to provide electrical contact with skin of a subject is provided. The electrode includes an electrode body configured to be removably coupled with the skin of the subject and to receive electrical signals from and/or transmit electrical signals to the skin of the subject, and an electrical coupling that facilitates coupling the electrode to an external computing system.
Koninklijke Philips N.v.

Infant eye opening apparatus

An infant eye opening apparatus so that an infant's eyelid can be opened to expose the eye so that the eye can be examined, the device can be operated with one hand and opens the eyelid without damaging the eyelid or eyeball. The apparatus comprises a first arm and a second arm, connected at one end with the ends opposite opposed to each other and separated.

Espresso milk frothing pitcher with one or more heat resistant silicone pads

An improved pitcher for making an espresso comprises a metal body having a top rim opening through which to feed a liquid and a pour spout; a handle attachment area; and a plurality of heat resistant silicone pads for adhering to one or more sides of the metal body, said silicone pads displaying as a first color at or below a first temperature and as a second color, distinguishable from the first color, at or above the first temperature. A method for making espressos with that pitcher is also disclosed..
Espriazza, L.l.c.

Butter holder and application device

A butter holder for dispensing butter onto food having a base piece which includes at least one wall having inner and outer wall surfaces. The base piece has a floor positioned at a base of the wall, and the inner wall surface and the floor define a cavity for retaining a portion of a stick of butter.

Slip resistant shoelace and cord

The present invention is for a slip resistant shoelace comprising a shoelace tube and one or more friction inducing features such as a plurality of bumps made or rubber or silicone disposed over at least a portion of the length of the shoelace tube. The bumps can also be disposed over a rope in any desired manner to make it a slippage resistant rope.

Method and system for a distributed optical transmitter with local domain splitting

Methods and systems for a distributed optical transmitter with local domain splitting is disclosed and may include, in an optical modulator integrated in a silicon photonics chip: receiving electrical signals, communicating the electrical signals to domain splitters along a length of waveguides of the optical modulator utilizing one or more delay lines, generating electrical signals in voltage domains utilizing the domain splitters, modulating received optical signals in the waveguides of the optical modulator by driving diodes with the electrical signals generated in the voltage domains, and generating a modulated output signal through interference of the modulated optical signal in the waveguides of the optical modulator. The delay lines may comprise one delay element per domain splitter, or may comprise a delay element per domain splitter for a first subset of the domain splitters and more than one delay element per domain splitter for a second subset of the domain splitters..
Lazzeri Società Agricola A R.l.

Versum Materials Us, Llc

. .

Decoder, receiver, and electronic device

A decoder with reduced power consumption is provided. The decoder includes a first circuit and a second circuit for holding data.
Semiconductor Energy Laboratory Co., Ltd.

Dc-dc hybrid converter with gallium nitride and silicon transistors

The present invention provides a hybrid combination of gan transistor and si transistor that are connected in an unique manner in a synchronous dc-dc power converter. The gan transistor acts as active switch and the si transistor acts as synchronous diode to reduce the power loss in a dc-dc power converter..
Indian Institute Of Science

Crosslinked polymeric battery materials

Provided are crosslinked or crosslinkable polymeric materials suitable for use as an electrode binder, separator, protector, or other uses in an electrochemical call. In some aspects, electrode materials are provided that include an electrode active material combined with a binder that is formed of crosslinked polymeric material, optionally crosslinked with lithium tetraborate.
Navitas Systems, Llc

Negative electrode material for nonaqueous electrolyte secondary batteries, and secondary battery

The present invention relates to a negative electrode material for nonaqueous electrolyte secondary batteries, which is composed of a silicon composite body that has a structure wherein microcrystals or fine particles of silicon are dispersed in a substance having a composition different from that of the microcrystals or fine particles, said silicon composite body having a crystallite size of the microcrystals or fine particles of 8.0 nm or less as calculated using scherrer's equation on the basis of the half width of the diffraction peak belonging to si(220) in an x-ray diffraction. The present invention is able to provide a negative electrode material for nonaqueous electrolyte secondary batteries, which has excellent coulombic efficiency, and a nonaqueous electrolyte secondary battery..
Shin-etsu Chemical Co., Ltd.

Methods for resistive random access memory (rram)

Methods for a resistive random access memory (rram) device are disclosed. A bottom electrode is formed over a substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.

Metal-assisted etch combined with regularizing etch

In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a).
Advanced Silicon Group, Inc.

Method for manufacturing an edge termination for a silicon carbide power semiconductor device

A method for manufacturing an edge termination structure for a silicon carbide power semiconductor device having a central region and an edge region is provided. The following manufacturing steps are performed: a) providing an n-doped silicon carbide substrate, b) epitaxially growing a silicon carbide n-doped drift layer on the substrate, which has a lower doping concentration than the substrate, c) creating at least one p-doped termination layer by implanting a second ion up to a maximum termination layer depth and annealing on the first main side, d) forming a doping reduction layer having a depth range, which doping reduction layer comprises at least one doping reduction region, wherein a depth of a doping concentration minimum of the doping reduction layer is greater than the maximum termination layer depth, wherein for the creation of each doping reduction region: implanting a first ion with an implantation energy in the drift layer at least in the edge region, wherein the first ion and the at least one implantation energy are chosen such that the doping reduction layer depth range is less than 10 μm, e) annealing the doping reduction layer, wherein step d) and e) are performed such that the doping concentration of the drift layer is reduced in the doping reduction layer..
Abb Schweiz Ag

Low temperature poly-silicon thin film transistor and manufacturing the same

A low temperature poly-silicon thin film transistor includes at least an interlayer dielectric layer formed of a material including silicon oxide and silicon nitride, in such a way that the interlayer dielectric layer includes a depression region channel in a stepped form. A source metal layer and a drain metal layer are formed in the depression region channel in the stepped form..
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Preparation methods for semiconductor layer and tft, tft, array substrate

Embodiments of the present disclosure provide preparation methods for a semiconductor layer and a tft, a tft and an array substrate. The preparation method for a semiconductor layer: includes forming a silicon dioxide film on a substrate; forming sidewalls at two ends of the semiconductor layer to be formed by patterning process; performing amination treatment on the sidewalls so that an aminosiloxane monolayer self-assembly is formed on the surface of the sidewalls; carboxylating a carbon nanotube solution and making the carboxylated carbon nanotube solution on the surface of the substrate with the sidewalls formed to form a carbon nanotube film; removing portions of the carbon nanotube film other than the portion between the sidewalls to form a semiconductor layer..
Boe Technology Group Co., Ltd.

Formation of finfet junction

A finfet structure, and method of forming such structure, in which a germanium enriched nanowire is located in the channel region of the fet, while simultaneously having silicon-germanium fin in the source/drain region of the finfet.. .
International Business Machines Corporation

Semiconductor device and manufacturing same

A semiconductor device includes an n+ type silicon carbide substrate, an n− type layer, an n type layer, a plurality of trenches, a p type region, an n+ type region, a gate insulating film, a gate electrode, a source electrode, a drain electrode, and a channel. The plurality of trenches is disposed in a planar matrix shape.
Hyundai Motor Company

Self-aligned gate cut with polysilicon liner oxidation

A method of forming a semiconductor device that includes forming a gate structure over a plurality of fin structures, wherein the gate structure provides a first fill pinch off between the fin structures separated by a first pitch; and forming a material stack of a silicon containing layer, and a dielectric layer over the plurality of fin structures, wherein the dielectric provides a second fill pinch off between fin structures separated by a second pitch. The silicon containing layer is converted into an oxide material layer.
International Business Machines Corporation

Vertical power component

A vertical power component includes a doped silicon substrate of a first conductivity type. A local well of a second conductivity type extends from an upper surface of the substrate.
Stmicroelectronics (tours) Sas

Bipolar transistor and manufacturing the same

A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region of a first conductivity type on the collector contact region.
Stmicroelectronics Sa

Polysilicon thin film and manufacturing method thereof, tft and manufacturing method thereof, and disply panel

A manufacturing method for a polysilicon thin film is provided. The manufacturing method for a polysilicon thin film includes forming a polysilicon layer, treating a surface of the polysilicon layer so that the surface of the polysilicon layer is electronegative, and supplying polar gas into a process chamber so that polar molecules of the polar gas are adsorbed on the surface of the polysilicon layer which is electronegative so as to form the polysilicon thin film, a surface of which has a hole density higher than an electron density..
Boe Technology Group Co., Ltd.

Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

A method for manufacturing a silicon carbide semiconductor device includes the steps of preparing a silicon carbide substrate having a first main surface and a second main surface located on a side opposite to the first main surface, forming an epitaxial layer on the first main surface, the epitaxial layer having a first conductivity type and having a third main surface located on a side opposite to a side on which the silicon carbide substrate is located, forming a trench, which includes side walls intersecting with the third main surface and a bottom portion connected to the side walls, in the epitaxial layer, widening an opening of the trench, and forming an embedded region, which has a second conductivity type different from the first conductivity type, in the trench. The epitaxial layer adjacent to the embedded region and the embedded region constitute a superjunction structure..
Sumitomo Electric Industries, Ltd.

Pillar resistor structures for integrated circuitry

Formation of a resistor pillar may be integrated with a replacement gate transistor process by concurrently forming the resistor pillar and sacrificial gate out of a same material, such as polysilicon. Pillar resistor contacts may also be concurrently formed with one or more transistor contacts..

Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon

A method of forming poly silicon comprises forming a first polysilicon-comprising material over a substrate, with the first polysilicon-comprising material comprising at least one of elemental carbon and elemental nitrogen at a total of 0.1 to 20 atomic percent. A second polysilicon-comprising material is formed over the first poly silicon-comprising material.
Micron Technology, Inc.

Semiconductor devices and methods of fabrication

Some embodiments include a semiconductor device having a stack structure including a source comprising polysilicon, an etch stop of oxide on the source, a select gate source on the etch stop, a charge storage structure over the select gate source, and a select gate drain over the charge storage structure. The semiconductor device may further include an opening extending vertically into the stack structure to a level adjacent to the source.

Flash memory device

An integrated circuit product includes a silicon-on-insulator (soi) substrate and a flash memory device positioned in a first area of the soi substrate. The soi substrate includes a semiconductor bulk substrate, a buried insulating layer positioned above the semiconductor bulk substrate, and a semiconductor layer positioned above the buried insulating layer, and the flash memory device includes a flash transistor device and a read transistor device.
Globalfoundries Inc.

Interposer heater for high bandwidth memory applications

A method for integrating heaters in high bandwidth memory (hbm) applications and the related devices are provided. Embodiments include forming a silicon (si) interposer over a substrate; forming hbm and an integrated circuit (ic) over the si interposer; forming a heater on the si interposer in a space between the hbm and si interposer; and utilizing one or more temperature sensors in the hbm to monitor a temperature of the hbm..
Globalfoundries Inc.

Semiconductor device and manufacturing the same

A semiconductor device includes a semiconductor substrate, a semiconductor element formed in or on the semiconductor substrate, a metal layer connected to the semiconductor element, and a passivation film that protects the semiconductor element. The passivation film is formed by alternately stacking a first insulation film that generates compressive stress and has low density and a second insulation film that generates compressive stress and has high density.
Murata Manufacturing Co., Ltd.

Semiconductor device and manufacturing the same

A semiconductor device includes a semiconductor substrate, a semiconductor element formed in or on the semiconductor substrate, a metal layer connected to the semiconductor element, and a passivation film that protects the semiconductor element. The passivation film is formed by alternately stacking a first insulation film that has larger tensile stress and a second insulation film that has smaller tensile stress.
Murata Manufacturing Co., Ltd.

Integrated circuit structure having deep trench capacitor and through-silicon via and forming same

One aspect of the disclosure relates to a method of forming an integrated circuit structure. The method may include providing a substrate having a front side and a back side, the substrate including a deep trench (dt) capacitor within the substrate extending toward the back side of the substrate; etching the substrate on the back side of the substrate to remove at least a portion of the substrate on the back side; forming a first dielectric layer covering the back side of the substrate and extending away from the front side of the substrate; and forming a through silicon via (tsv) adjacent to the dt capacitor, the tsv extending through the first dielectric layer toward the front side of the substrate..
Globalfoundries Inc.

Silicon epitaxial wafer and producing same

A silicon single crystal is pulled up such that nitrogen concentration of the crystal is 1×1011 to 2×1013 atoms/cm3, the crystal cooling rate is about 4.2° c./min at a temperature of a silicon melting point to 1350° c. And is about 3.1° c./min at a temperature of 1200° c.
Sumco Corporation

Gas composition for dry etching and dry etching method

A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by cxhyfz, wherein x is an integer of from 3 to 5, and relationships y+z≤2x and y≤z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition..
Kanto Denka Kogyo Co., Ltd.

Method of forming titanium oxide film and forming hard mask

A method for forming a titanium oxide film on a substrate to be processed, which has a silicon portion on a surface thereof, the method including: forming a first titanium oxide film on the surface of the substrate to be processed, which includes the silicon portion, by means of thermal ald by alternately supplying a titanium-containing gas and a gas containing hydrogen and oxygen serving as an oxidizing agent in a first stage; and forming a second titanium oxide film on the first titanium oxide film by means of plasma ald by alternately supplying a titanium-containing gas and plasma of an oxygen-containing gas as an oxidizing agent in a second stage.. .
Tokyo Electron Limited

Silicon oxide silicon nitride stack ion-assisted etch

A method for ion-assisted etching a stack of alternating silicon oxide and silicon nitride layers in an etch chamber is provided. An etch gas comprising a fluorine component, helium, and a fluorohydrocarbon or hydrocarbon is flowed into the etch chamber.
Lam Research Corporation

Gate oxide structure and fabricating the same

A method for forming a gate oxide layer on a substrate is provided, in which a region of the substrate is defined out by a shallow trench isolation (sti) structure. An oxide layer covers over the substrate and a mask layer with an opening to expose oxide layer corresponding to the region with an interface edge of the sti structure.
United Microelectronics Corp.

Multi-column electron beam lithography including field emitters on a silicon substrate with boron layer

A multi-column electron beam device includes an electron source comprising multiple field emitters fabricated on a surface of a silicon substrate. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitters.
Kla-tencor Corporation

Multi-gate nor flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates

Multi-gate nor flash thin-film transistor (tft) string arrays (“multi-gate nor string arrays”) are organized as stacks of horizontal active strips running parallel to the surface of a silicon substrate, with the tfts in each stack being controlled by vertical local word-lines provided along one or both sidewalls of the stack of active strips. Each active strip includes at least a channel layer formed between two shared source or drain layers.
Sunrise Memory Corporation

Three-dimensional vertical nor flash thin-film transistor strings

A memory structure includes (a) active columns of polysilicon formed above a semiconductor substrate, each active column extending vertically from the substrate and including a first heavily doped region, a second heavily doped region, and one or more lightly doped regions each adjacent both the first and second heavily doped region, wherein the active columns are arranged in a two-dimensional array extending in second and third directions parallel to the planar surface of the semiconductor substrate; (b) charge-trapping material provided over one or more surfaces of each active column; and (c) conductors each extending lengthwise along the third direction. The active columns, the charge-trapping material and the conductors together form a plurality of thin film transistors, with each thin film transistor formed by one of the conductors, a portion of the lightly doped region of an active column, the charge-trapping material between the portion of the lightly doped region and the conductor, and the first and second heavily doped regions.
Sunrise Memory Corporation

Gate driver on array circuit based on low temperature poly-silicon semiconductor thin film transistor

The present disclosure proposes a goa circuit having goa units connected in a serial. Each goa unit includes a scan-control module, an output module, a pull-down module, and an output adjusting module.

Display module and display device

A display module and a display device are disclosed. The display module includes an organic light emitting diode substrate and a liquid crystal panel, wherein the organic light emitting diode substrate includes a base and a plurality of organic light emitting diodes disposed on a side of the base adjacent to the liquid crystal panel; the liquid crystal panel includes a plurality of sub-pixels configured to filter light; wherein the base is a silicon base, on which a first driving circuit and a second driving circuit are disposed, the first driving circuit configured to drive the respective organic light emitting diodes to emit light and the second driving circuit configured to the respective sub-pixels to filter light..
Beijing Boe Optoelectronics Technology Co., Ltd.

Surface-normal optical coupling interface with thermal-optic coefficient compensation

The disclosed embodiments provide a system that implements an optical interface. The system includes a semiconductor chip with a silicon layer, which includes a silicon waveguide, and an interface layer (which can be comprised of sion) disposed over the silicon layer, wherein the interface layer includes an interface waveguide.
Oracle International Corporation

Method and apparatus to minimise the onset and recovery time of a silicon photomultiplier

Silicon photomultiplier circuitry is provided that comprises at least one silicon photomultiplier pixel, each pixel comprising a plurality of silicon photomultiplier microcells. The silicon photomultiplier circuitry comprises control circuitry adapted to maintain a substantially constant voltage on a connection node between microcells of the pixel.
Sensl Technologies Ltd.

System and electrical testing of through silicon vias (tsvs)

A testing system for carrying out electrical testing of at least one first through via forms an insulated via structure extending only part way through a substrate of a first body of semiconductor material. The testing system has a first electrical test circuit integrated in the first body and electrically coupled to the insulated via structure.
Stmicroelectronics S.r.l.

Biological sensing system

Provided is a biological sensing system, including a nanowire field-effect transistor and a sensing chip. A gate terminal of the nanowire fet surrounds a gate of a silicon nanowire or a gate of a silicon nanobelt, diameter of the silicon nanowire is less than 20 nm.
National Chiao Tung University

Friction material composition, and friction material and friction member using the same

A friction material composition imparts superior friction coefficient, abrasion resistance, aggressiveness against an opposite member, and brake noise preventive characteristics in high speed and high load braking to a friction material, although containing no copper, which can pollute rivers, lakes, the ocean, or other environments, or containing copper in an amount of at most 0.5 mass. Moreover, a friction material and a friction member each uses the friction material composition.
Hitachi Chemical Company, Ltd.

Contoured bondcoat for environmental barrier coatings and methods for making contoured bondcoats for environmental barrier coatings

A method of forming an article includes forming a plurality of channels and ridges in a silicon-containing layer on a surface of a substrate of the article using a mask placed on the surface of the substrate or the silicon-containing layer.. .
General Electric Company

Polycrystalline silicon ingot, polycrystalline silicon bar, and producing single crystal silicon

A polycrystalline silicon ingot having a value of te−ts, Δt, of 50° c. Or less, wherein ts and te are the onset temperature and the completion temperature of melting, respectively, when the temperature is increased at a rate of 60° c./minute or less in the temperature range of 1400° c.
Shin-etsu Chemical Co., Ltd.

Die-cast aluminium alloy piece, and processing method and mobile terminal therefor

Provided is a method for processing a die-cast aluminum alloy piece, comprising the following steps: performing a strengthening treatment on a die-cast aluminum alloy piece body (10) using a strengthening liquid, so as to form an organosilicon hardened layer (20) on the surface of the die-cast aluminum alloy piece body (10); forming an aluminum film layer (30) on the organosilicon hardened layer (20) by means of vacuum coating; performing an anodic oxidation treatment on the aluminum film layer (30), so that a part of the aluminum film layer (30) is oxidized to form an anodic oxidation layer (40), wherein the ratio of the thickness of the anodic oxidation layer (40) to that of the aluminum film layer (30) is (1-3):1; and performing a hole sealing treatment on the anodic oxidation layer (40). The invention further, relates to a die-cast aluminum alloy piece and a mobile terminal using the die-cast aluminum alloy piece..
Dongguan Janus Electronic Precision Components Co., Ltd.

Free graphite containing powders

An improved atomized powder metal material containing an increased amount of free graphite after heat treatment and/or sintering is provided. The powder metal material is typically a ferrous alloy and includes carbon in an amount of 1.0 wt.
La Corporation De L'ecole Polytechnique De Montreal

Method of making a molybdenum alloy having a high titanium content

The invention relates to method of making a molybdenum alloy which has a high titanium content and further comprises silicon and/or boron. The method comprises subjecting to pressureless sintering or sintering under pressure in an inert gas atmosphere a mixture of one or more powders (i) of an alloy of mo and ti and, optionally, one or more additional metals x and/or (i′) powders of mo and of tin, and (ii) one or more powders comprising one or more powders of silicides of mo and/or ti and/or (iii) one or more powders of nitrides which comprise si3n4 powder and/or bn powder..
Mtu Aero Engines Ag

Composition and dna marking elastomeric material

Methods of incorporating coded dna into elastomeric materials and compositions thereof are claimed. Methods of recovering information from elastomeric materials with coded dna and authenticating silicone objects with coded dna are also claimed..
Apdn (b.v.i.) Inc.

Composition for glass and ceramic polishing

A composition for glass and ceramic polishing has a polishing material including titanium dioxide particles covered, at least in part, with silicon dioxide. The composition has excellent applicability to cmp polishing, and has polishing material particles having a uniform particle size, thereby having no concerns about the occurrence of deformation or change of properties.
Tayca Corporation

Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity

Wherein x1 and x2, z1 and z2, r1, r2, r3, and r4, and n are as defined herein, and water, wherein the polishing composition has a ph of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition.

Primer composition, adhering method, and electric/electronic part

A primer composition is provided. The primer composition comprises: (a) an organosiloxane block copolymer represented by the average unit formula: (r12sio2/2)a(r2sio3/2)b, wherein each r1 and r2 is independently an alkyl group having 1 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group having 7 to 20 carbon atoms, “a” is a number in the range of 0.40 to 0.90, “b” is a number in the range of 0.10 to 0.60, and “a+b”=1.00, and having 0.5 to 35.0 mol % of silicon atom-bonded hydroxyl groups or silicon atom-bonded alkoxy groups, in which resinous siloxane blocks are connected by linear siloxane blocks; (b) a curing catalyst; and (c) an organic solvent.
Dow Corning Toray Co., Ltd.

Curable granular silicone composition and manufacturing thereof

A curable granular silicone composition is provided, which may be in a pellet form. The curable granular silicone composition comprises: (a) hot meltable silicone fine particles having a hydrosilylation reactive group and/or radical reactive group, with a softening point of 30° c.
Dow Corning Toray Co., Ltd.

Catalysts for polyurethane foam polyol premixes containing halogenated olefin blowing agents

The invention provides polyurethane and polyisocyanurate foams and methods for the preparation thereof. More particularly, the invention relates to closed-celled, polyurethane and polyisocyanurate foams and methods for their preparation.
Honeywell International Inc.

Surface reactive crosslinkable copolymers

The present application is directed to a crosslinkable copolymer comprising styrene and 4-vinyl benzocyclobutene monomers and at least one alkoxysilane group, a method for generating an ultrathin copolymer film, which contains at least one crosslinked copolymer as defined herein, on a silicon-containing substrate, a composition or film comprising at least one copolymer as defined herein, as well as the use of this copolymer or composition containing it for electrical insulation and/or bonding of silicon-containing substrates.. .
Henkel Ag & Co. Kgaa

Carbon bridged aminosilane compounds for high growth rate silicon-containing films

Wherein r, r1, r2, r3, r4, and r5 are defined herein.. .

Coated article with low-e coating having low visible transmission

This invention relates to a coated article including a low-emissivity (low-e) coating. In certain example embodiments, the low-e coating is provided on a substrate (e.g., glass substrate) and includes at least first and second infrared (ir) reflecting layers (e.g., silver based layers) that are spaced apart by contact layers (e.g., nicr based layers) and a dielectric layer of or including a material such as silicon nitride.
Guardian Glass, Llc

Composition containing synthetic mineral particles and a process for preparing the composition

A composition comprising synthetic mineral particles, such as silicate or phyllosilicate mineral particles, is presented. The composition can be prepared by a process in which a hydrogel precursor of the synthetic mineral particles is produced by a coprecipitation reaction between at least one compound comprising silicon, such as sodium metasilicate, and at least one compound comprising at least one metal element, such as a dicarboxylate salt of the formula m(r1—coo)2, wherein r1 is h or an alkyl group having 1 to 4 carbon atoms.
Universite Paul Sabatier (toulouse Iii)

Fluidized bed reactor for preparing chlorosilanes

The lifetime of a fluidized bed reactor containing silicon particles, for the production of chlorosilanes is greatly extended by armoring at least a portion of the reactor shell interior wall with expanded metal coated with a cement containing ceramic particles.. .
Wacker Chemie Ag

Compressible, multilayer articles and making thereof

The present disclosure relates to compressible, multilayer articles useful in force sensing capacitors. The compressible, multilayer articles include a cured, silicone elastomer layer having a first major surface and a second major surface and at least one of a first and second tie-layer, each having a first major surface and a second major surface, comprising a silicone polyoxamide, wherein the first major surface of the first tie-layer is in contact with and adhered to the first major surface of the cured, silicone elastomer layer and/or the first major surface of the second tie-layer is in contact with and adhered to the second major surface of the cured, silicone elastomer layer.
3m Innovative Properties Company

Method for producing contact lenses

The invention provides a method producing contact lenses, including the step of: holding the molded silicone hydrogel contact lens attached to the one of the female mold half or the male mold half with a vacuum supplied with a suction cup; deforming a surface of the one of the female mold half or the male mold half having the molded silicone hydrogel contact lens attached to with a pin so as to separate the molded silicone hydrogel contact lens from the mold half attached to and to transfer the molded silicone hydrogel contact lens to the suction cup; moving the suction cup away from the pin while the suction cup continues to hold the molded silicone hydrogel contact lens remains; applying a compressed gas to blow the molded silicone hydrogel contact lens away from the suction cup into a container.. .
Novartis Ag

Surface modification of silicones

A process for modifying a silicone elastomeric-based surface of an article where the coefficient of friction (cof) of the silicone elastomeric-based surface is generally reduced by at least 5% is disclosed. The process comprises subjecting the silicone elastomeric-based surface of the article to vacuum ultraviolet (uv) radiation..
Dow Corning Corporation

Timepiece component made of welded materials

A timepiece component includes a first silicon-based or ceramic-based part, and a second metal-based part. One surface of the first part is directly welded using laser-type electromagnetic radiation onto a surface of the second part in order to secure the parts without addition of material.
Nivarox-far S.a.

Method for manufacturing a golf club head

A method for manufacturing a golf club head includes providing a club head body produced by electric smelting an alloy base material including 0.04-0.07 wt % of carbon, 0.5-1.0 wt % of manganese, 0.5-1.0 wt % of silicon, less than 0.04 wt % of phosphorus, less than 0.03 wt % of sulfur, 15-17.7 wt % of chromium, 3.6-5.1 wt % of nickel, 2.8-3.5 wt % of copper, with the rest being iron and inevitable impurities. A solid solution treatment is proceeded at 1020-1080° c.
Fusheng Precision Co., Ltd

Apparatus and classifying and dedusting granular polysilicon

Granular polysilicon is fed into a screening plant, divided into two or more fractions by means of one or more screen surfaces, and thereby classified and dedusted wherein a throwing motion of the granular polysilicon in the screening plant removes adhering dust particles from the granular polysilicon, the removed dust particles are taken off from the screening plant by means of a gas flow supplied to the screening plant, and the screening plant is of gas-tight design and supply and takeoff of the gas flow are effected such that the screening plant is at a positive pressure compared to the surroundings.. .
Wacker Chemie Ag

Shaped catalyst body for the catalytic oxidation of so2 into so3

The invention relates to shaped catalyst bodies for the oxidation of so2 to so3, which comprise vanadium, at least one alkali metal and sulfate on a silicon dioxide support material, wherein the shaped body has the shape of a cylinder having 3 or 4 hollow-cylindrical convexities, obtainable by extrusion of a catalyst precursor composition comprising vanadium, at least one alkali metal and sulfate on a silicon dioxide support material through the opening of an extrusion tool, wherein the opening of the extrusion tool has a cross section formed by 3 or 4 partly overlapping rings whose midpoints lie essentially on a circular line having a diameter of y, wherein the rings are bounded by an outer line lying on a circle having an external diameter x1 and an inner line lying on a circle having an internal diameter x2.. .
Basf Se

Composition for acoustic wave probe, silicone resin for acoustic wave probe using the same, acoustic wave probe, ultrasound probe, acoustic wave measurement apparatus, ultrasound diagnostic apparatus, photoacoustic wave measurement apparatus, and ultrasound endoscope

Provided is a composition for an acoustic wave probe including a polysiloxane mixture containing at least polysiloxane having a vinyl group and a phenyl group, polysiloxane having two or more si—h groups in a molecular chain, and zinc oxide, a silicone resin for an acoustic wave probe, the acoustic wave probe, an acoustic wave measurement apparatus, an ultrasound diagnostic apparatus, an ultrasound probe, a photoacoustic wave measurement apparatus, and an ultrasound endoscope.. .
Fujifilm Corporation

Composition for covering and protecting scars

Subject of the invention is a composition comprising: (a) at least one film-forming polymer, which does not comprise silicon, (b) at least one organic uv filter, and (c) at least one organic solvent, wherein the composition is liquid at 20° c., wherein components (a) and (b) are dissolved in solvent (c), and wherein the ratio of the total amounts of organic uv filters (b) to film-form ing polymers (a) is below 6.5. The invention also relates to compositions for therapy, uses of the composition, devices and methods..
Siniq Gmbh

Pacifier

A pacifier and a method of making a pacifier. Two or more separate silicone-based materials are joined together with a compression mold such that the pacifier defines a unitary structure where gaps and related crevices associated with multi-piece pacifier construction are avoided while still permitting artwork, differing colors or other aesthetically-pleasing indicia.

Adjustable no-slip headband

An adjustable athletic headband is provided with silicone strips applied to an inwardly facing surface of the headband for a non-slip engagement with the wearer's forehead and hair. The headband restricts movement on the wearer's head when engaged in athletic or rigorous activities due to the frictional engagement of the silicone material with the wearer's head and hair.

. .

Substrate support assembly

A substrate support assembly comprises a ceramic puck comprising a substrate receiving surface, and having embedded therein: (i) an electrode to generate an electrostatic force to retain a substrate placed on the substrate receiving surface; and (ii) a heater to heat the substrate, the heater comprising a plurality of spaced apart heater coils. A compliant layer bonds the ceramic puck to a base, the compliant layer comprising a silicon material.
Applied Materials, Inc.

Silicon photonics receive phased array sensors

High-performance ultra-wideband receive phased array sensors (rx-pas) are disclosed, which have unique capabilities, enabled through photonic integrated circuits and novel optical architectures. Unique capabilities for a rx-pas are provided by wafer scale photonic integration including heterogeneous integration of iii-v materials and ultra-low-loss silicon nitride waveguides.

Photonic beam forming network chip based on silicon semiconductor

Disclosed is a photonic beam forming network chip using silicon semiconductor based monolithic integration for fabrication and using true time delay for signal processing of a phased array antenna, including at least one power splitter a plurality of mach-zehnder modulators, a plurality of true time delay devices, a photonic detector, and a photonic waveguide configured to respectively connect the at least one power splitter, the plurality of mach-zehnder modulators, the plurality of true time delay devices, and the photonic detector.. .
Korea Advanced Institute Of Science And Technology

Lithium ion battery anode containing silicon nanowires grown in situ in pores of graphene foam and production process

A process for producing an anode layer, comprising: (a) dispersing catalyst metal-coated si particles, graphene sheets, and an optional blowing agent in a liquid medium to form a graphene/si dispersion; (b) dispensing and depositing the dispersion onto a supporting substrate to form a wet layer and removing the liquid medium from the wet layer to form a dried layer of graphene/si mixture material; and (c) exposing the dried layer to a high temperature environment, from 300° c. To 2,000° c., to induce volatile gas molecules from graphene sheets or to activate the blowing agent for producing the graphene foam and, concurrently, to enable a catalyst metal-catalyzed growth of multiple si nanowires emanated from si particles as a feed material in pores of the foam to form the anode layer; wherein the si nanowires have a diameter of 5-100 nm and a length-to-diameter aspect ratio of at least 5..
Nanotek Instruments, Inc.

Solid state imaging apparatus, production method thereof and electronic device

A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus..
Sony Corporation

Microstructure enhanced absorption photosensitive devices

Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with cmos/bicmos circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and iii-v materials and can also reduce avalanche voltages for avalanche photodiodes.
W&wsens, Devices Inc.

Single structure cascode device

A novel semiconductor power transistor is presented. The semiconductor structure is simple and is based on a mos configuration with a drift region and an additional gate that modulates the carrier density in the drift region, so that the control on the carrier transport is enhanced and the specific on-resistance per area is reduced.
Qualcomm Incorporated

Reducing metal gate overhang by forming a top-wide bottom-narrow dummy gate electrode

A polysilicon layer is formed over a substrate. The polysilicon layer is etched to form a dummy gate electrode having a top portion with a first lateral dimension and a bottom portion with a second lateral dimension.
Taiwan Semiconductor Manufacturing Co., Ltd.

Insulated gate bipolar transistor and manufacturing method therefor

An insulated gate bipolar transistor (100) is provided. A substrate (10) of the insulated gate bipolar transistor (100) is of an n type.
Csmc Technologies Fab1 Co., Ltd.

Wafer laminate and producing the same

The wafer laminate includes a support, an adhesive layer formed on the support, and a wafer laminated in such a manner that its front surface having a circuit surface faces the adhesive layer. The adhesive layer includes a light-shielding resin layer a and a non-silicone thermoplastic resin-coating resin layer b in this order from the support side.

Semiconductor package utilizing embedded bridge through-silicon-via interconnect component

A semiconductor package includes a resin molded package substrate comprising a resin molded core, a plurality of metal vias in the resin molded core, a front-side rdl structure, and a back-side rdl structure. A bridge tsv interconnect component is embedded in the resin molded core.
Micron Technology, Inc.

Semiconductor device structure with 110-pfet and 111-nfet current flow direction

A finfet comprises a hybrid substrate having a top wafer of (100) silicon, a handle wafer of (110) silicon, and a buried oxide layer between the top wafer and the handle wafer; a first set of fins disposed in the top wafer and oriented in a <110> direction of the (100) silicon; and a second set of fins disposed in the handle wafer and oriented in a <112> direction of the (110) silicon. The first set of fins and the second set of fins are aligned..
International Business Machines Corporation

Methods of forming a silicon layer, methods of forming patterns, and methods of manufacturing semiconductor devices using the same

A method of forming a pattern includes forming an etch target layer on a substrate, forming sacrificial patterns on the etch target layer, the sacrificial patterns including a carbon-containing material, providing a silicon-sulfur compound or a sulfur-containing gas onto the sacrificial patterns to form a seed layer, providing a silicon precursor onto the seed layer to form silicon-containing mask patterns, and at least partially etching the etch target layer using the mask patterns.. .
Samsung Electronics Co., Ltd.

Method for selectively etching silicon oxide with respect to an organic mask

A method for selectively etching trenches in a silicon oxide containing layer with an organic planarization layer is provided. Processing the silicon oxide layer comprises a plurality of process cycles, wherein each etch cycle comprises a deposition phase, comprising providing a flow of a deposition phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio, providing a constant rf power, which forms the deposition phase gas into a plasma, and stopping the deposition phase and an etch phase, comprising providing a flow of an etch phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio that is higher than the fluorine to carbon ratio of the deposition phase gas, providing a pulsed rf power, which forms the etch phase gas into a plasma, and stopping the etch phase..
Lam Research Corporation

Selective sin lateral recess

Exemplary methods for laterally etching silicon nitride may include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor.
Applied Materials, Inc.

Selective sin lateral recess

Exemplary methods for laterally etching silicon nitride may include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor.
Applied Materials, Inc.

Integrated light-emitting diode arrays for displays

Integrated light-emitting diode (led) arrays based devices or systems and methods of forming the integrated led arrays based devices or systems are provided. In one aspect, an integrated active-matrix led display includes a silicon substrate including a first side and a second side, an array of active-matrix led pixels formed on the first side, each led pixel including at least one led and at least one non-volatile memory coupled to the at least one led, display drivers formed on the first side and coupled to the led pixels, integrated circuits formed on the second side, and conductive electrodes penetrating through the silicon substrate and coupling the display drivers to the integrated circuits.

Vibratory feeder systems for rfid elements

Systems and methods for processing rfid element or chip components allow for the use of relatively common and inexpensive vibratory feeder handling equipment that require a much lower capital cost than systems incorporating technology such as flip chipping or direct punching down approaches. Instead, vibratory feeders provide feed handling equipment for the rfid element or chip components, which are subsequently fed and combined with rfid antennas in forming rfid devices such as rfid tags.
Avery Dennison Retail Information Services, Llc

Silicon-containing photoresist for lithography

A photoresist includes a polymer backbone, an acid labile group (alg) chemically bonded to the polymer backbone, a photo-acid generator (pag), a solvent, and a silicon-containing unit that is chemically bonded to the alg. A method of using the photoresist composition includes forming a layer of the photoresist over a substrate, performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer.
Taiwan Semiconductor Manufacturing Co., Ltd.

Integrated optical phased arrays with optically enhanced elements

An optical phase array, includes, in part, n optical signal emitting elements, and n lenses each associated with a different one of the n optical signal emitting elements and positioned to form an image of its associated signal emitting element, where n is an integer greater than 1. The optical signal emitting elements may be a grating coupler, an edge coupler, and the like.
California Institute Of Technology

Integrated polarization splitter and rotator including a third region for tuning the polarization dependent loss of output transverse electric signals

An integrated polarization splitter and rotator (psr) employs the te0 and te1 modes of propagating light, rather than the te0 and tm0 modes used in conventional prior art psr. The integrated psr exhibits appreciably flatter wavelength response because it does not require a directional coupler to de-multiplex incoming polarizations.
Elenion Technologies, Llc

Method for inspecting aging state of silicone rubber composite insulating material

A method for inspecting an aging state of a silicone rubber composite insulating material comprises the following steps: bombarding, for multiple times and by a pulsed laser beam, selected points on a surface of a silicone rubber composite insulating material to be inspected to generate a plasma; collecting spectrum information emitted by the plasma at each bombardment, and extracting, from the collected spectrum information, a spectral property indicator of a specific constituent element of the silicone rubber composite insulating material at each bombardment; and determining aging state information of the silicone rubber composite insulating material according to the change pattern of the spectral property indicator of the specific constituent element with respect to the bombardment depth. The method enables the rapid and accurate inspection of an aging state of a silicone rubber composite insulating material, and avoids the destructive tests required in the prior art..
Graduate School At Shenzhen, Tsinghua University

Oblique incidence, prism-incident, silicon-based, immersion microchannel-based measurement device and measurement method

An oblique incidence, prism-incident, silicon-based, immersion microchannel-based measurement device related to an example of the present disclosure may include: a microchannel structure which has a support, a substrate which is formed on the support and made of a semiconductor or dielectric material, a cover part which has a prism structure and is installed on the support, and a microchannel which is formed in any one of an upper portion of the support and a lower end of the cover part; a sample injection part which forms an adsorption layer for a sample on a substrate by injecting a buffer solution containing the sample made of a biomaterial into the microchannel; a polarized light generation part which emits polarized incident light through an incident surface of the prism to the adsorption layer at an incident angle that satisfies a p-wave antireflection condition; and a polarized light detection part which first reflective light reflected by at least one of the adsorption layer and the substrate enters through a reflective surface of the prism and which detects a change in polarization of the first reflective light.. .
Korea Research Institute Of Standards And Science

Method for forming a pin bore

A pin bore is formed on a piston of the internal combustion engine, wherein the piston is connected with a connecting rod through a piston pin, and includes pin bosses through which the pin bore is formed for receiving the piston pin. The piston is casted from aluminum silicon alloy.
Fuji Manufacturing Co., Ltd.

Surface modification of silicones

A process for modifying a silicone elastomeric-based surface of a textile article where the coefficient of friction (cof) of the silicone elastomeric-based surface is generally reduced by at least 5% is disclosed. The process comprises subjecting the silicone elastomeric-based surface of the textile article to vacuum ultraviolet (uv) radiation..
Dow Corning Corporation

Single crystal ingots with reduced dislocation defects and methods for producing such ingots

An improved system based on the czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot.
Corner Star Limited

High manganese steel

Disclosed herein is a high manganese steel including: 0.5 to 1.2 wt % of carbon (c), 0.1 to 2.3 wt % of silicon (si), 15 to 30 wt % of manganese (mn), 7.0 to 13.0 wt % of aluminum (al), 0.01 to 3.0 wt % of nickel (ni), 0.01 to 0.5 wt % of chromium (cr), 0.01 to 0.4 wt % of molybdenum (mo), 0.01 to 0.5 wt % of vanadium (v), 0.005 to 0.3 wt % of niobium (nb), 0.005 to 0.3 wt % of titanium (ti), and remainder iron (fe) and other inevitable impurities.. .
Hyundai Motor Company

Microalloy carbon steel for passenger car hub bearings and manufacturing the same

A steel, including: between 0.45 and 0.70 wt. % of carbon, between 0.10 and 0.50 wt.
Jiangyin Xingcheng Special Steel Works Co., Ltd.

Rubber mixture and vehicle tires

Disclosed are sulfur-crosslinkable rubber mixtures that can be incorporated into treads of vehicle tires, and vehicle tires comprising the disclosed sulfur-crosslinkable rubber mixtures. The rubber mixtures comprise: at least one diene rubber, at least one silica, at least one hydrocarbon resin, and 1 to 40 phr of at least one liquid polybutadiene having terminal organosilicon modification and having a weight-average molecular weight mw by gpc of 500 to 12 000 g/mol..
Continental Reifen Deutschland Gmbh

Optoelectronic device with a mixture having a silicone and a fluoro-organic additive

An optoelectronic device with a mixture including silicone and a fluoro-organic additive is disclosed. In an embodiment the device includes at least one radiation-emitting or radiation-detecting semiconductor and a mixture including silicone and a fluoro-organic additive.
Osram Opto Semiconductors Gmbh

Chain-extended polydimethylsiloxane vinylic crosslinkers and uses thereof

The invention provides a chain-extended polydiorganosiloxane vinylic crosslinker which comprises (1) a polymer chain comprising at least two polydiorganosiloxane segments and one hydrophilized linker between each pair of polydiorganosiloxane segements, wherein each polydiorganosiloxane comprises at least 5 dimethylsiloxane units in a consecutive sequence, wherein the hydrophilized linker is a divalent radical having at least two (meth)acrylamide moieties; (2) two terminal (meth)acryloyl groups, wherein the chain-extended polydiorganosiloxane vinylic crosslinker has an average molecular weight of at least about 1500 daltons. The present invention is also related to a silicone hydrogel contact lens, which comprises repeating units derived from a chain-extended polydiorganosiloxane vinylic crosslinker of the invention.
Novartis Ag

Silicone elastomer compositions, composite materials, and methods

Provided herein are compositions and methods of forming compositions that include ethylene-vinyl acetate, alumina trihydrate, a peroxide, and an ultra-high molecular weight (uhmw) silicone elastomer. The uhmw silicone elastomer may be added after the other components of the composition have been added in the methods provided herein.
Equistar Chemicals, Lp

Tri-block prepolymers and their use in silicone hydrogels

Described is a tri-block prepolymer having a chemical structure of [a]-[b]-[c], comprising at least one monovalent reactive group, wherein segment [a] and [c] independently comprise polymeric segments based on a first hydrophilic monomer comprising functionality selected from the group consisting of hydroxyalkyl, alkylamine, and mixtures thereof and optionally a second hydrophilic monomer, and [b] comprises a polymeric segment of at least one silicone-containing macromer and optionally a third hydrophilic monomer comprising functionality selected from the group consisting of hydroxyalkyl, alkylamine, and mixtures thereof and optionally a silicone-containing monomer. These prepolymers may be used alone or in combination with other components in reactive monomer mixtures for making silicone hydrogels and ophthalmic devices made therefrom, including contact lenses..
Johnson & Johnson Vision Care, Inc.

Polymerizable polydimethylsiloxane-polyoxyalkylene block copolymers

The invention provides a polymerizable polydimethylsiloxane-polyoxyalkylene block copolymer which comprises (1) a linear polymer chain comprising at least two polydimethylsiloxane segments, one hydrophilic polyoxyalkylene segment between each pair of polydimethylsiloxane segments, and one amide-rich linker between each pair of one polydimethylsiloxane segment and one hydrophilic polyoxyalkylene segment, and (2) two terminal (meth)acryloyl groups. The hydrophilized polydiorganosiloxane vinylic crosslinker has a weight average molecular weight of at least 3000 daltons.
Novartis Ag

Hierarchically porous aluminosilicate materials

Disclosed are methods of synthesizing a hierarchically porous aluminosilicate materials. Methods for synthesizing a hierarchically porous aluminosilicate material can comprise (i) combining, in aqueous solution, a base, an aluminum source, and silicon source to form a precursor gel; (ii) removing water from the precursor gel to form a nucleated gel; and (iii) reacting the nucleated gel at a temperature of from 0° c.
Ohio State Innovation Foundation

Packaging for polysilicon and packaging polysilicon

Reduction of contamination and the proportion of fines fractions in the packaging of rod form polysilicon is achieved by directly filling a plastic bag with polysilicon from a cleaning bowl by a rotating motion which causes polysilicon chunks to slide into the bag.. .
Wacker Chemie Ag

Annealing apparatus using two wavelengths of radiation

A thermal processing apparatus and method in which a first laser source, for example, a co2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a gaas laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam.
Applied Materials, Inc.

Tool steel composition for component of die-casting apparatus or of extrusion press

A tool steel composition for a component of a die-casting apparatus or of an extrusion press, comprises, in weight percentage: from about 0.35% to about 0.40% carbon (c); from about 0.32% to about 0.50% silicon (si); from about 4.50% to about 5.50% chromium (cr); from about 3.75% to about 4.75% molybdenum (mo); from about 0.80% to about 1.00% vanadium (v); and iron (fe).. .
Exco Technologies Limited

Catalyst for direct nox decomposition and a forming and using the catalyst

A process of forming a direct nox catalyst includes the steps of providing a palladium salt, providing a silicon oxide support material, mixing the palladium salt and silicon oxide support material in an aqueous solution, evaporating the aqueous solution forming a solid, calcining the solid, and then exposing the calcined solid to a pretreatment gas at a specified temperature to form a desired direct nox catalyst. When the process includes exposing the calcined solid to helium gas at a temperature of from 650 to 1000° c.
Toyota Motor Engineering & Manufacturing North America, Inc.

Method for preparation of gold nanoparticles through pulsed laser

A method for preparation of gold nanoparticles in aqueous solution through pulsed laser, comprises firstly preparing an aqueous solution including haucl4.h2o and h2o2, followed by allowing a catalytic light source to emit into the aqueous solution for catalysis, such that a plurality of gold nanoparticles are formed in the aqueous solution, the catalytic light source being a pulsed laser. Additionally, it is also possible for firstly placing a porous silicon substrate into the aqueous solution, and then allowing the catalytic light source to emit into the aqueous solution for catalysis, such that the gold nanoparticles are grown on the surface of the porous silicon substrate.
National Chi Nan University

Cosmetic composition

A finisher composition that provides improved look and feel benefits to an underlying skin care product. The finisher composition is an oil-in-water emulsion that includes from 10 to 25 wt % of substantially spherical silicone elastomer particles having a mean particle size of from 2 to 40 microns.
The Procter & Gamble Company

Portable artificial respirator

Provided is a portable artificial respirator, which is manufactured in a compact size without a closing and opening device such as a valve so as to be easily portable, and is configured to internally pressurize the lung and the chest through the trachea and mouth of a human body when an emergency occurs. The portable artificial respirator has a flexible air chamber which is a cylinder-shaped chamber having an opened air passage formed only on the lower part, and has a plurality of folds on the main periphery to be folded and compressed by the pressure applied to the lower part, and restored when the pressure is released to be inflated to the upper part.
Dasala Inc.

Use of african seed extract for hunger suppression

A composition and method for the use of irvingia gabonensis seed extract for hunger suppression in obese individuals with low leptin sensitivity, individuals with higher levels of ghrelin, and for individuals with cannabis-induced appetite stimulation where dosage can be effectively administered in a gum base cold pressed into a tablet containing at least 100 mg of irvingia gabonensis seed extract and maltitol, sorbitol, isomalt, xylitol, natural & artificial flavors, vegetarian magnesium stearate, sucralose and silicon dioxide.. .
Engen Medical Corporation

Toyoda Gosei Co.. Ltd.

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Schmitt trigger circuit with hysteresis determined by modified polysilicon gate dopants

A schmitt trigger's hysteresis is established by standard and non-standard mosfets having different (lower/higher) threshold voltages. For example, a standard n-channel transistor having a relatively low threshold voltage (e.g., 1v) sets the lower trigger switching voltage, and a non-standard n-channel transistor (e.g., an n-channel source/drain and a polysilicon gate doped with a p-type dopant) exhibits a relatively high threshold voltage (e.g., 2v) that sets the higher trigger switching voltage.
Tower Semiconductor Ltd.

Method of manufacturing a photovoltaic-thermoelectric hybrid device, and photovoltaic-thermoelectric hybrid device

A photovoltaic-thermoelectric hybrid device is disclosed, which comprises a bi-layer silicon substrate, an electrode unit having a first electrode and a second electrode disposed on and connected to the bi-layer silicon substrate, and an external circuit connecting to the electrode unit, in which an electric current is set up between the first electrode and the second electrode and flows through the bi-layer silicon substrate as the first electrode is either heated or illuminated more than the second electrode.. .
National Chi Nan University

Negative active material, lithium secondary battery including the material, and manufacturing the material

A negative active material including: a porous silicon-carbon secondary particle including: a plurality of silicon-carbon primary particles including a plurality of silicon-carbon primary particles including a silicon material, and a first carbonaceous material, wherein an apparent density of a silicon-carbon primary particle of the plurality of silicon-carbon primary particles is about 2 grams per cubic centimeter or greater; and a second carbonaceous material, wherein the second carbonaceous material is disposed on the plurality of silicon-carbon primary particles.. .
Samsung Sdi Co., Ltd.

Nano-structured porous thermoelectric generators

Methods and processes to fabricate thermoelectric materials and more particularly to methods and processes to fabricate nano-sized doped silicon-based semiconductive materials to use as thermoelectrics in the production of electricity from recovered waste heat. Substantially oxidant-free and doped silicon particulates are fractured and sintered to form a porous nano-sized silicon-based thermoelectric material..
Mossey Creek Technologies Inc.

Solar cell emitter region fabrication with differentiated p-type and n-type architectures and incorporating dotted diffusion

Methods of fabricating solar cell emitter regions with differentiated p-type and n-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface.
Sunpower Corporation

Method of manufacturing solar cell

A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° c. To 700° c.
Lg Electronics Inc.

Solar cell device and manufacturing same

Provided is a solar cell device wherein: a cu-containing metal layer exhibits good adhesion strength with respect to an si substrate and a tab wire; and diffusion of cu into the substrate and an ag finger wiring line is suppressed. Provided is a solar cell device which comprises a silicon semiconductor substrate, a cu-containing metal layer, an ag-containing finger wiring line, and an interface layer containing an oxide or an organic compound.
Material Concept, Inc.

Solar cell and manufacturing the same

A solar cell includes a substrate formed of n-type single crystal silicon, an emitter region of a p-type which is positioned at a first surface of the substrate and includes a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance, a plurality of surface field regions of the n-type locally positioned at a second surface opposite the first surface of the substrate, a plurality of first electrodes which are positioned only on the second emitter region to be separated from one another and are connected to the second emitter region, and a plurality of second electrodes which are positioned on the plurality of surface field regions to be separated from one another and are connected to the plurality of surface field regions.. .
Lg Electronics Inc.

Thin film transistor, manufacture thin film transistor and cmos device

A thin film transistor, a manufacture method of a thin film transistor and a cmos device are provided. The thin film transistor includes: a substrate and a low temperature poly-silicon (ltps) layer disposed on the same side of the substrate, a first and a second light doped zones disposed adjacently to two opposite ends of the ltps on the same layer with the ltps, a first heavy doped zone disposed on the same layer with the ltps, the first heavy doped zone is disposed adjacently to an end of the first light doped zone away from the ltps, the second heavy doped zone is disposed adjacently to an end of the second light doped zone away from the ltps, the first insulating layer, covering the first and the second light doped zones as well as the first and the second heavy doped zones..
Shenzhen China Star Optoelectronics Technology Co., Ltd.

This film transistor and display panel

The thin film transistor includes a gate electrode formed on a surface of a substrate; a first amorphous silicon layer formed on an upper side of the gate electrode; a plurality of polysilicon layers separated by the first amorphous silicon layer and formed on the upper side of the gate electrode with a required spaced dimension; a second amorphous silicon layer and an n+ silicon layer which are formed on the upper side of the plurality of polysilicon layers and the first amorphous silicon layer; and a source electrode and a drain electrode formed on the n+ silicon layer.. .
Sakai Display Products Corporation

Gate all around vacuum channel transistor

A vacuum channel transistor having a vertical gate-all-around (gaa) architecture provides high performance for high-frequency applications, and features a small footprint compared with existing planar devices. The gaa vacuum channel transistor features stacked, tapered source and drain regions that are formed by notching a doped silicon pillar using a lateral oxidation process.
Stmicroelectronic, Inc.

Manufacture array substrate

The present invention provides a manufacture method of an array substrate, comprising steps of: depositing an active layer including amorphous silicon on a substrate; covering the active layer with a siox thin film; converting the amorphous silicon in the active layer into polysilicon; etching the active layer to form a pattern; implanting ion into the active layer; cleaning and removing the siox thin film. In the present invention, first, the siox thin film covers the active layer, and then processes of the conversion from amorphous silicon into polysilicon, etching the active layer and ion implantation are performed.
Wuhan China Star Optoelectronics Technology Co., Ltd.

Finfet device and fabricating same

An integrated circuit structure includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate, wherein the isolation regions have opposite sidewalls facing each other. A fin structure includes a silicon fin higher than top surfaces of the isolation regions, a germanium-containing semiconductor region overlapped by the silicon fin, silicon oxide regions on opposite sides of the germanium-containing semiconductor region, and a germanium-containing semiconductor layer between and in contact with the silicon fin and one of the silicon oxide regions..
Taiwan Semiconductor Manufacturing Company, Ltd.

Semiconductor device and manufacturing semiconductor device

A mos gate is provided on a front surface side of a silicon carbide substrate. The silicon carbide substrate includes silicon carbide layers sequentially formed on an n+-type starting substrate by epitaxial growth.
Fuji Electric Co., Ltd.

Fully depleted soi device for reducing parasitic back gate capacitance

A method is presented for forming a semiconductor structure. The method includes forming a bilayer buried insulator over a substrate, forming an extremely thin silicon-on-insulator (etsoi) over the bilayer buried insulator, forming a dummy gate, and forming a source/drain next to the dummy gate, the source/drain defining a raised source/drain region.
International Business Machines Corporation

Semiconductor device and manufacturing semiconductor device

A gate trench of a mos gate formed in the front surface of a silicon carbide substrate includes a first portion that includes the bottom surface of the gate trench, a second portion that is connected to the substrate front surface side of the first portion, and a third portion that is connected to the substrate front surface side of the second portion. In the third portion of the gate trench, an n+ source region is exposed along the sidewalls.
Fuji Electric Co., Ltd.

Semiconductor device, silicon wafer and manufacturing a silicon wafer

A method of manufacturing a silicon wafer is provided that includes extracting an n-type silicon ingot over an extraction time period from the a silicon melt comprising n-type dopants; adding p-type dopants to the silicon melt over at least part of the extraction time period, thereby compensating an n-type doping in the n-type silicon ingot by 10% to 80%; slicing the silicon ingot; forming hydrogen related donors in the silicon wafer by irradiating the silicon wafer with protons; and annealing the silicon wafer subsequent to the forming of the hydrogen related donors in the silicon wafer.. .
Infineon Technologies Ag

Back side illuminated cmos image sensor arrays

An image sensor including at least one pixel for collecting charge in its photodiode is provided. The image sensor comprises: a substrate having a first surface on a front side and a second surface on a back side, a photodetector formed in the silicon substrate and having a light-receiving surface on the second surface, and a first layer with positive charges disposed on the second surface, the first layer being configured to form an electron accumulation region at the light-receiving surface of the photodetector for suppressing a dark current at a back side interface of the image sensor.
Cista System Corp.

Vertical fin resistor devices

Semiconductor devices and methods are provided in which vertical fin resistor devices are integrally formed as part of a process flow for fabricating finfet (fin field effect transistor) devices. For example, a semiconductor device includes a finfet device and a vertical fin resistor device formed on a semiconductor substrate.
International Business Machines Corporation

Finfet structure and fabricating gate structure

A method of forming a gate structure on a fin structure includes the steps of providing a fin structure covered by a first silicon oxide layer, a silicon nitride layer, a gate material and a cap material in sequence, wherein the silicon nitride layer contacts the first silicon oxide layer. Later, the cap material is patterned to form a first cap layer and the gate material is patterned to form a first gate electrode by taking the silicon nitride layer as an etching stop layer.
United Microelectronics Corp.

Vertical fin resistor devices

Semiconductor devices and methods are provided in which vertical fin resistor devices are integrally formed as part of a process flow for fabricating finfet (fin field effect transistor) devices. For example, a semiconductor device includes a finfet device and a vertical fin resistor device formed on a semiconductor substrate.
International Business Machines Corporation

Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device includes forming an amorphous silicon layer over a first isolation layer. The method further includes simultaneously forming a gate oxide layer of a transistor device and transforming the amorphous silicon layer into a polycrystalline silicon layer by a thermal oxidation process.
Infineon Technologies Dresden Gmbh

A stacked semiconductor package having fault detection and a identifying a fault in a stacked package

A stacked semiconductor package comprising a functional silicon die having embedded thereupon a wide input/output 2 (wio2) interface, and two or more memory dies forming a corresponding two or more memory layers of the stacked semiconductor package. A plurality of through silicon vias (tsvs) are formed through the two or more memory dies, wherein each of the plurality of tsvs traverse through the two or more memory layers to the functional silicon die via the wio2 interface of the functional silicon die.
Intel Corporation

Photo-sensitive silicon package embedding self-powered electronic system

A self-powered electronic system comprises a first chip (401) of single-crystalline semiconductor embedded in a second chip (302) of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container (330) bordered by ridges (331).
Texas Instruments Incorporated

Systems, methods, and apparatuses for implementing die recovery in two-level memory (2lm) stacked die subsystems

In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing die recovery in two-level memory (2lm) stacked die subsystems. For instance, there is disclosed in accordance with one embodiment a stacked semiconductor package having therein: a processor functional silicon die at a first layer of the stacked semiconductor package; one or more memory dies forming a corresponding one or more memory layers of the stacked semiconductor package; a plurality of through silicon vias (tsvs) formed through the one or more memory dies, wherein each of the plurality of tsvs traverse through the one or more memory layers to the processor functional silicon die at the first layer of the stacked semiconductor package; a plurality of physical memory interfaces electrically interfacing the one or more memory dies to the processor functional silicon die at the first layer through the memory layers via the plurality of tsvs; a redundant physical memory interface formed by a redundant tsv traversing through the memory layers to the processor functional silicon die at the first layer through which to reroute a memory signal path from a defective physical memory interface at a defective tsv to a functional signal path traversing the redundant tsv.
Intel Corporation

Composite dielectric interface layers for interconnect structures

Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The composite films in one embodiment include at least two elements selected from the group consisting of al, si, and ge, and at least one element selected from the group consisting of o, n, and c.
Lam Research Corporation

Local trap-rich isolation

A trap-rich polysilicon layer is interposed between the active (soi) layer and the underlying handle portion of a semiconductor substrate to prevent or minimize parasitic surface conduction effects within the active layer and promote device linearity. In various embodiments, the trap-rich layer extends vertically through a portion of an isolation layer and laterally therefrom between the isolation layer and the handle portion of the substrate to underlie a portion of the device active area..
Globalfoundries, Inc.

Fabrication of silicon germanium-on-insulator finfet

A method of making a structurally stable sige-on-insulator finfet employs a silicon nitride liner to prevent de-stabilizing oxidation at the base of a sige fin. The silicon nitride liner blocks access of oxygen to the lower corners of the fin to facilitate fabrication of a high-concentration sige fin.
Stmicroelectronics, Inc.

Isolated semiconductor layer over buried isolation layer

An integrated circuit may be formed by forming an isolation recess in a single-crystal silicon-based substrate. Sidewall insulators are formed on sidewalls of the isolation recess.
Texas Instruments Incorporated

Multiple finfet formation with epitaxy separation

A semiconductor device includes a buried epitaxially grown substrate and a silicon on insulator (soi) layer. The device also includes a buried oxide (box) layer between the buried epitaxially grown substrate and the soi layer, an isolation trench having first width (w1), a contact trench having a second width (w2) and a capacitive trench having a third width (w3).
International Business Machines Corporation

Substrate treating apparatus

A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.. .
Samsung Electronics Co., Ltd.

Method for manufacturing silicon carbide epitaxial substrate, silicon carbide epitaxial substrate, manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device

A method for manufacturing a silicon carbide epitaxial substrate includes epitaxially growing a first layer on a silicon carbide single crystal substrate, and forming a second layer at an outermost surface of the first layer. The second layer has a chemical composition or density different from that of the first layer.
Sumitomo Electric Industries, Ltd.

Methods and devices using pvd ruthenium

Ruthenium containing gate stacks and methods of forming ruthenium containing gate stacks are described. The ruthenium containing gate stack comprises a polysilicon layer on a substrate; a silicide layer on the polysilicon layer; a barrier layer on the silicide layer; a ruthenium layer on the barrier layer; and a spacer layer comprising a nitride on sides of the ruthenium layer, wherein the ruthenium layer comprises substantially no ruthenium nitride after formation of the spacer layer.
Applied Materials, Inc.

Method of gas-phase deposition by epitaxy

A gas phase epitaxial deposition method deposits silicon, germanium, or silicon-germanium on a single-crystal semiconductor surface of a substrate. The substrate is placed in an epitaxy reactor swept by a carrier gas.
Stmicroelectronics (crolles 2) Sas

Remote plasma based deposition of graded or multi-layered silicon carbide film

Provided are methods and apparatuses for depositing a graded or multi-layered silicon carbide film using remote plasma. A graded or multi-layered silicon carbide film can be formed under process conditions that provide one or more organosilicon precursors onto a substrate in a reaction chamber.
Lam Research Corporation

Miniature inductors and related circuit components and methods of making same

New types of circuit elements for integrated circuits include structures wherein a thickness dimension is much greater than a width dimension and is more closely spaced than the width dimension in order to attain a tight coupling condition. The structure is suitable to form inductors, capacitors, transmission lines and low impedance power distribution networks in integrated circuits.
Lonestar Inventions, L.p.

Ferrite composition and electronic device

A ferrite composition includes a main component and an accessory component. The main component includes 18 to 30 mol % of iron oxide in terms of fe2o3, 4 to 14 mol % of copper oxide in terms of cuo, 0 to 6 mol % of zinc oxide in terms of zno, and a remaining part of nickel oxide.
Tdk Corporation

Systems, methods, and apparatuses for implementing testing of a far memory subsystem within two-level memory (2lm) stacked die subsystems

In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing testing of a far memory subsystem within two-level memory (2lm) stacked die subsystems. For instance, there is in accordance with one embodiment a stacked semiconductor package which includes: a functional silicon die; a test controller having signature accumulation logic embedded therein; a fabric to route transactions between the test controller and a far memory controller of the functional silicon die; in which the far memory controller includes a physical memory interface having no physical memory attached; a two level memory (2lm) controller having logic to modify received transactions to indicate a cache miss forcing all received transactions to be routed to the far memory controller via the fabric; and an auto response mechanism to observe the transactions on the fabric and route responses and completions issued in reply to the transactions back to an agent having initiated the transactions.
Intel Corporation

Wafer-level liquid-crystal-on-silicon projection assembly, systems and methods

A wafer-level liquid-crystal-on-silicon (lcos) projection assembly includes a lcos display for spatially modulating light incident on the lcos display and a polarizing beam-separating (pbs) layer for directing light to and from the lcos display. A method for fabricating a lcos projection system includes disposing a pbs wafer above an active-matrix wafer.
Omnivision Technologies, Inc.

Polarization-insensitive optical transceiver

An integrated circuit that includes a wavelength-filter layer stack (which may include silicon oxynitride) and an optical substrate (such as a silicon-on-insulator platform) is described. During operation, an optical signal received from an optical fiber or an optical waveguide is wavelength filtered into a set of wavelength-filter optical waveguides by an optical multiplexer/demultiplexer (such as an echelle grating and/or an array waveguide grating) in the wavelength-filter layer stack.
Oracle International Corporation

Systems, methods, and apparatuses for implementing testing of fault repairs to a through silicon via (tsv) in two-level memory (2lm) stacked die subsystems

Stacked semiconductor packages and methods for performing bare die testing on a functional silicon die in a stacked semiconductor package are described. In an example, a stacked semiconductor package includes a functional silicon die, a test controller having signature accumulation logic embedded therein, and a fabric to route transactions between the test controller and any of a plurality of near memory controllers of the functional silicon die..
Intel Corporation

Color tunable led assembly

An led assembly includes two strings of surface mounted led devices mounted to a central ceramic plug portion of a pcb substrate. One string has a cct of 4000 degrees kelvin.
Luminus, Inc.

Manufacturing monocrystalline silicon and monocrystalline silicon

A smonocrystalline silicon include a straight body formed without generating a remelt growth area of 200 μm or more in a height in a growth direction. Growth striations, which are formed radially across the straight body, include a growth striation with an outer end interrupted by another growth striation not to reach a peripheral portion of the straight body.
Sumco Corporation

Apparatus and meth0d for growing silicon single crystal ingot

Provided is a silicon single crystal ingot growing apparatus of an embodiment, including: a chamber; a crucible provided inside the chamber to accommodate silicon melt; a rotating shaft and a crucible support disposed at a lower portion of the crucible; a heater provided inside the chamber to heat the silicon melt; a pulling unit for rotating and pulling up an ingot grown from the silicon melt; and a magnetic field generating unit for applying a horizontal magnetic field to the crucible, wherein a first direction in which the rotating shaft rotates the crucible and a second direction in which the pulling unit rotates the ingot are the same.. .
Sk Siltron Co., Ltd.

Vanadium-graphite based cermet

This invention relates to a vanadium and graphite based cermet, and a combination of other chemical elements of lighter atomic density. The cermet comprises of vanadium and graphite which makes up 70 percent (70%) of weight.

Cast aluminum alloy, producing an engine component, engine component, and use of a cast aluminum alloy to produce an engine component

The application relates to a cast aluminum alloy, to a method for producing an engine component, in particular a piston for an internal combustion engine, wherein a cast aluminum alloy is cast in the gravity permanent-mold casting method, to an engine component, in particular a piston for an internal combustion engine, at least partially consisting of a cast aluminum alloy, and to the use of a cast aluminum alloy to produce an engine component, in particular a piston for an internal combustion engine. The cast aluminum alloy consists of the following alloying elements: silicon: 9.0 wt % to<10.5 wt %, nickel: 0.8 wt % to<1.9 wt %, copper: 1.8 wt % to<3.6 wt %, magnesium: 0.5 wt % to 1.8 wt %, iron: 0.9 wt % to<1.4 wt %, zirconium and/or vanadium: in each case, 0.05 to<=0.3 or 0.2%, respectively, manganese: up to<=0.4 wt %, titanium: up to<=0.15 wt %, phosphorus: up to<=0.05 wt %, and aluminum and unavoidable impurities as the remainder..
Federal-mogul Nurnberg Gmbh

Heat-conductive silicone grease composition

A heat-conductive silicone grease composition comprising (a) an organopolysiloxane in an amount of 20 to 90 parts by mass, (b) a non-silicone-type organic compound in an amount of 80 to 10 parts by mass (wherein the total amount of the components (a) and (b) is 100 parts by mass) and (c) a heat-conductive inorganic filler having an average particle diameter of 0.5 to 100 μm in an amount of 200 to 2,000 parts by mass relative to 100 parts by mass of the total amount of the components (a) and (b), wherein the sp value of the non-silicone-type organic compound (b) is greater than that of the organopolysiloxane (a) (i.e., (b)>(a)), the value obtained by subtracting the sp value of the component (a) from the sp value of the component (b) is greater than 2, and the viscosity of the heat-conductive silicone grease composition is 50 to 1,000 pa·s at 25° c.. .
Shin-etsu Chemical Co., Ltd.

Organopolysiloxane emulsion composition for release paper or release film, producing same, and release paper and release film

An organopolysiloxane emulsion composition for release paper or a release film, said composition being produced by dispersing a mixture comprising components (a) to (d) as mentioned below in water: (a) an alkenyl-group-containing diorganopolysiloxane having at least two alkenyl groups per molecule and having a viscosity of 1,000 pa·s or less at 25° c., in an amount of 100 parts by mass; (b) an organohydrogenpolysiloxane having at least two si—h groups per molecule and having a viscosity of 1 pa·s or less at 25° c., in such to an amount that the number of moles of an si—h group can become 0.5 to 10 times the number of moles of an alkenyl group in the component (a); (c) a curing catalyst, in an amount of 0.01 to 3 parts by mass; and (d) a polyether-modified and/or polyol-modified organosilicon compound, in an amount of 0.01 to 10 parts by mass.. .
Shin-etsu Chemical Co., Ltd.

Paper coating material having environment-friendly, water-proof and oil-proof properties, and manufacturing the same

Provided are a paper coating material having environment-friendly, water-proof, and oil-proof properties, and a method of manufacturing the same. The paper coating material includes a copolymer emulsion in which a silicon-based polymer and an acryl-based polymer are copolymerized, the copolymer emulsion having the weight average molecular weight of 100,000 to 200,000, and a colloidal aqueous solution of gelatinized polyvinyl alcohol to be mixed with the copolymer emulsion.
Repaper Inc.

Biological composite material

A plastics compound includes a biological component, wherein at least (a) at least one biomineral filler and (b) at least one polymer are processed to give a compound. This is done using a renewable biomineral filler having a high proportion of silicon dioxide..

Method of preparing powdery diacetal clarifying agent

Provided is a method of preparing a powdery diacetal clarifying agent, which comprises mixing an aromatic aldehyde, a polyol, and an acid catalyst in an organic polar solvent, adding a hydrogenating agent and an inorganic silicon-containing agent into the foregoing mixture, and filtering the mixture. The powdery diacetal clarifying agent prepared by the method can have excellent flowability, dispersability, thermal resistance, and color stability.
Sunko Ink Co., Ltd.

Method for preparing the silicoaluminate form of the aei zeolite structure with high yields, and its application in catalysis

The present invention relates to a new process for synthesising the silicoaluminate form of the aei zeolite structure based on the use of another zeolite, zeolite y, as the only source of silicon and aluminum, in order to obtain high synthesis yields (greater than 80%) in the absence of any other source of silicon, phosphine-derivedcationsand fluoride anions in the synthesis medium. The n,n-dimethyl-3,5-dimethylpiperidinium cation may be used as the osda, and the fau crystal structure is transformed into the aei crystal structure with high yields.
Universitat Politècnica De València

Cavity with silicon on insulator mems pressure sensing device with an extended shallow polygon cavity

An improved microelectromechanical system (mems) pressure sensing device has an extended shallow polygon cavity on a top side of a silicon supporting substrate. A buried silicon dioxide layer is formed between the top side of the supporting substrate and a bottom side of a device layer.
Continental Automotive Systems, Inc.

Door protection device and method

A door protection device has a number of stay tabs attached along an edge of a protective layer or pad. Each of the stay tabs has a sharped end or wedge shaped end that is inserted between the window and the weather stripping.

Substrates, laminates, and assemblies for flexible heaters, flexible heaters, and methods of manufacture

A substrate for a flexible heater comprises a polyimide layer; a primer layer disposed on a first side of the polyimide layer; and a high-consistency silicone rubber adhesive layer calendered onto the first side of the polyimide layer.. .
Rogers Corporation

Capacitive discharge welding system

A capacitive discharge welding system includes at least one capacitive discharge-based power supply that is adapted to provide alternate polarity pulses from a first weld to a subsequent weld, and to be compatible with iron-core transformers used for alternating current resistance welding; at least one iron core transformer adapted to receive electrical discharges from the capacitive discharge-based power supply; a polarity switching network that includes at least two sets of silicon controlled rectifiers that are arranged in pairs for facilitating current flow in alternate directions; a pair of engagable, properly biased shunt diodes that are operative to shunt reflected current for protecting the silicon controlled rectifiers when the system is in use; and a control network configured for simultaneous engagement of the properly biased shunt diodes and firing the silicon controlled rectifiers for current flow; and tracking polarity for assuring that subsequent pulses use opposite direction current flow for preventing saturation of the iron core transformer.. .
Edison Welding Institute, Inc.

Method for producing an engine component, engine component, and use of an aluminium alloy

A method for producing an engine component, more particularly a piston for an internal combustion engine, in which an aluminium alloy is cast using the gravity die casting method is provided. The aluminium alloy comprises: 9 to ≦10.5% by weight silicon, >2.0 to <3.5% by weight nickel, >3.7 to 5.2% by weight copper, <1% by weight cobalt, 0.5 to 1.5% by weight magnesium, 0.1 to 0.7% by weight iron, 0.1 to 0.4% by weight manganese, >0.1 to <0.2% by weight zirconium, >0.1 to <0.2% by weight vanadium, 0.05 to <0.2% by weight titanium, 0.004 to 0.008% by weight phosphorus, with aluminium and unavoidable impurities constituting the rest.
Federal-mogul Nurnberg Gmbh

A process for the removal of soot from a sulfurous gas stream

In a process for the removal of soot from a sulfurous gas stream, a process gas containing o2 and more than 500 ppm so2 and/or so3 together with soot is brought into contact with a vk type catalyst in a reactor, said catalyst comprising vanadium pentoxide (v2o5), sulfur in the form of sulfate, pyrosulfate, tri- or tetrasulfate and one or more alkali metals, such as na, k, rb or cs, on a porous carrier, preferably a silicon dioxide carrier.. .
Haldor Topsøe A/s

Hypochlorous acid-based hand sanitizer

A sanitizing formulation is disclosed for use as a hand sanitizer. The formulation may include hypochlorous acid, a silicone polymer or blend thereof, sodium phosphate, hydrochloric acid, and sodium magnesium silicate.
Reoxcyn Discoveries Group, Inc.

Bimatoprost ocular silicone inserts and methods of use thereof

The present invention is directed to compositions of bimatoprost, processes of preparing these compositions, devices comprising these compositions, and methods of lowering intraocular pressure.. .
Forsight Vision5, Inc.

Compositions and methods for treating hair

Disclosed herein are compositions and methods for styling hair comprising at least two latex polymers, wherein at least one latex polymer is a film-forming polymer; at least one aminofunctional silicone; at least one amphoteric surfactant; at least one alkylpolyglucoside; at least one anionic thickening agent; and water; wherein the at least two latex polymers are present in a combined amount ranging from about 0.1% to about 30% by weight, relative to the weight of the composition.. .
L'oreal

Compositions and methods for treating hair

Disclosed herein are compositions and methods for styling hair comprising at least two latex polymers, wherein at least one latex polymer is a film-forming polymer; at least one aminofunctional silicone; at least one thickening agent chosen from optionally crosslinked and/or neutralized 2-acrylamido-2-methylpropanesulfonic acid polymers (amps) and copolymers, crosslinked anionic copolymers of acrylamide, crosslinked anionic copolymers of amps, emulsions of crosslinked anionic copolymers of acrylamide/nonionic surfactants, emulsions of amps/nonionic surfactants, or mixtures thereof; at least one nonionic surfactant chosen glyceryl esters, fatty alcohols, alkoxylated alcohols and lanolin, alkylpolyglucosides, or mixtures thereof; and water; wherein the at least two latex polymers are present in a combined amount ranging from about 0.1% to about 30% by weight, relative to the weight of the composition.. .
L'oreal

Compositions and methods for treating hair

Disclosed herein are compositions and methods for styling hair comprising at least two latex polymers, wherein at least one latex polymer is a film-forming polymer; at least one oil chosen from lower alkanes, hydrocarbon oils, plant/vegetable oils, fluoro oils, silicones, or mixtures thereof; and water; wherein the at least two latex polymers are present in a combined amount ranging from about 0.1% to about 30% by weight, relative to the weight of the composition.. .
L'oreal

Foaming cosmetic compositions and methods for producing the same

Disclosed herein are foaming cosmetic compositions comprising: at least one anionic thickening agent; at least two alkaline compounds; and at least one silicone. Methods for producing the foaming cosmetic compositions and for improving the stability of a foamed cosmetic composition are also disclosed..
L'oreal

Therapeutic massage mat

A therapeutic massage mat is provided with one or more healing agents. The therapeutic massage mat includes: (i) a top layer, (ii) a middle layer, (iii) a bottom layer, (iv) an array of layered sheets, (v) one or more bags, (vi) one or more motors, and (vii) a velcro.

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Komatsu Ltd.

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Fabrication of ceramic matrix composites with carbon nanotubes and graphene

Systems and methods are provided for fabrication of a ceramic matrix composite (cmc) material with carbon nanotubes and graphene. One embodiment is a method for forming a ceramic matrix composite structure.
The Boeing Company

Planar lightwave circuit active connector

An assembly of waveguide wavelength multiplexers and demultiplexers, together with continuous wave (cw) laser transmitters that interface to grating couplers on a silicon photonics chip, providing cw sources, multiplexed output and optionally multiplexed input, all using a single photonic lightwave circuit (plc).. .
Kaiam Corp.

A device includes a first silicon-controlled rectifier (scr), a second scr connected in anti-parallel with the first scr, and a commutation module. The commutation module is configured to apply a reverse bias voltage to the first scr or the second scr to turn off the first scr or the second scr.
Rockwell Automation Technologies, Inc.

Elastic wave device, high-frequency front end circuit, and communication apparatus

An elastic wave device includes a piezoelectric substrate that includes first and second main surfaces which face each other, an interdigital transducer electrode that is provided on the first main surface of the piezoelectric substrate and includes a first electrode layer containing molybdenum as a main component, and a dielectric film that is provided on the piezoelectric substrate and covers the interdigital transducer electrode. The piezoelectric substrate is made of lithium niobate.
Murata Manufacturing Co., Ltd.

Asymmetric two-stage dc-dc switching converter

A asymmetric two-stage dc-dc switching converter, using multi-stage phases, in parallel to single-stage phases, to supply an output voltage, is described. An intermediate voltage supply is used to provide supply to some second-stage phases.
Dialog Semiconductor (uk) Limited

Reluctance generator

A reluctance generator includes a circular stator made by silicon steel sheets and amorphous metal, first and second exciting coils, first and second outputting coils, and a rotator disposed in the stator. The stator includes four projecting poles.

Negative electrode active material for lithium secondary battery, and lithium secondary battery including negative electrode including the negative electrode active material

A negative electrode active material for a lithium secondary battery including silicon (si), manganese (mn), component a including at least one selected from iron (fe), molybdenum (mo), chromium (cr), zinc (zn), titanium (ti), nickel (ni), vanadium (v), tungsten (w), and yttrium (y), and component b including at least one selected from carbon (c), boron (b), oxygen (o), nitrogen (n), phosphorous (p), and sulfur (s), wherein a total amount of si, mn, and component a is about 70 atom % or less, an amount of component b is 30 atom % or more, and a total amount of mn and component a is in a range of about 10 atom % to about 35 atom %.. .
Mk Electron Co., Ltd.

Negative electrode active material for non-aqueous electrolyte rechargeable battery, preparing same, and non-aqueous rechargeable battery including same

Provided are a negative electrode active material for a non-aqueous electrolyte rechargeable battery, a method for preparing the same, and a non-aqueous electrolyte rechargeable battery including the same and, more specifically, a negative electrode active material for a non-aqueous electrolyte rechargeable battery, including a silicon oxide composite, capable of degrading irreversible characteristics and improving structural stability of the non-aqueous electrolyte rechargeable battery, the silicon oxide composite containing silicone, a silicon oxide represented by general formula siox (0<x<2), and an oxide including silicone and m (m is any one element selected from the group consisting of mg, li, na, k, ca, sr, ba, ti, zr, b, and al), a method for preparing the same, and to a non-aqueous electrolyte rechargeable battery including the same.. .
Daejoo Electronic Materials Co., Ltd.

Thin-film transistor array panel and manufacturing method thereof

A thin-film transistor array panel and a manufacturing method thereof are disclosed. The thin-film transistor array panel has a polysilicon layer including a first region, a second region and a third region.
Shenzhen China Star Optoectronocs Technology Co., Ltd.

Method of fabricating x-ray absorbers for lowenergyx-ray spectroscopy

A method of forming low-energy x-ray absorbers. Sensors may be formed on a semiconductor, e.g., silicon, wafer.
U.s.a. As Represented By The Administrator Of The National Aeronautics And Space Administration

Vertical light emitting devices with nickel silicide bonding and methods of manufacturing

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series.
Micron Technology, Inc.

Light-emitting device and manufacturing the same

A light-emitting device includes a light-emitting element, a wavelength conversion member, a light-reflective member and a light-distributing member. The wavelength conversion member is arranged on the light-emitting element.
Nichia Corporation

Semiconductor device and manufacturing the same

A provided semiconductor device includes a ge photodiode having proper diode characteristics. A groove is provided on a germanium growth protective film, a p-type silicon layer, and a first insulating film from the top surface of the germanium growth protective film without reaching the major surface of a semiconductor substrate.
Renesas Electronics Corporation

Dielectric sidewall structure for quality improvement in ge and sige devices

Some embodiments relate to an integrated circuit (ic) disposed on a silicon substrate, which includes a well region having a first conductivity type. A dielectric layer is arranged over an upper surface of the silicon substrate, and extends over outer edges of the well region and includes an opening that leaves an inner portion of the well region exposed.
Taiwan Semiconductor Manufacturing Co., Ltd.

P-type solar cell with limited emitter saturation current

The current disclosure describes a p-type solar cell with back emitter with increased electrical efficiency and decreased manufacturing and material costs. According to one aspect of the present disclosure, the solar cell comprises gallium-doped silicon, closely arranged contact openings in the rear passivation layer, and physical vapor deposition application of at least one metal to create the rear contact.
Solarworld Innovations Gmbh

Semiconductor device and manufacturing the semiconductor device

Resistance of a gate electrode is reduced in a split gate monos memory configured by a fin fet. A memory gate electrode of a split gate monos memory is formed of a first polysilicon film, a metal film, and a second polysilicon film formed in order on a fin.
Renesas Electronics Corporation

Low temperature poly-silicon tft substrate and manufacturing method thereof

The present invention provides a ltps tft substrate and a manufacturing method thereof. The lips tft substrate of the present invention includes a metal layer formed on a channel zone so that the metal layer, a source electrode, and a drain electrode can be used as a mask to form ldd zones in a poly-silicon layer in order to save the mask needed for separately forming the ldd zones; further, due to the addition of the metal layer that is connected to the channel zone of the poly-silicon layer, the electrical resistance of the channel zone can be effectively reduced to increase a tft on-state current.
Wuhan China Star Optoelectronics Technology Co., Ltd.

Method for producing semiconductor device

A method for producing a semiconductor device includes a first step of forming a first insulating film around a fin-shaped semiconductor layer on a semiconductor substrate; a second step of forming a second insulating film, depositing a first polysilicon, planarizing the first polysilicon, forming a third insulating film, forming a second resist, and forming a pillar-shaped semiconductor layer, a first dummy gate, and a first hard mask; and a third step of forming a fourth insulating film, depositing a second polysilicon, planarizing the second polysilicon, etching back the second polysilicon, depositing a sixth insulating film, forming a fourth resist, forming a second hard mask, forming a third hard mask, forming a second dummy gate, and forming a first dummy contact on the fin-shaped semiconductor layer.. .
Unisantis Electronics Singapore Pte. Ltd.

Flexible display

A flexible display is disclosed. The flexible display including an oxide semiconductor thin film transistor on a plastic substrate includes a first buffer layer disposed on the plastic substrate, a second buffer layer disposed on the first buffer layer and formed of silicon oxide (siox), and an active layer disposed on the second buffer layer and formed of an oxide semiconductor.
Lg Display Co., Ltd.

Semiconductor device and manufacturing the same

A semiconductor device including a field-effect transistor having source and drain source regions, first and second gate electrodes and a protective diode connected to the transistor. The first gate electrode is formed over a first gate insulating film in a lower part of a trench.
Renesas Electronics Corporation

Finfet with rounded source/drain profile

A method of forming a finfet with a rounded source/drain profile comprises forming a fin in a substrate, etching a source/drain recess in the fin, forming a plurality of source/drain layers in the source/drain recess; and etching at least one of the plurality of source/drain layers. The source/drain layers may be a silicon germanium compound.
Taiwan Semiconductor Manufacturing Company, Ltd.

Method for manufacturing a semiconductor device

The reliability of a semiconductor device is improved. A first gate electrode of a dummy gate electrode including silicon is formed over a semiconductor substrate.
Renesas Electronics Corporation

Semiconductor device

A nitride semiconductor device is disclosed, where the nitride semiconductor device type of a field effect transistor having a gate electrode and an insulating film covering the gate electrode. The gate electrode has stacked metals of nickel (ni) and gold (au), while, the insulating film is made of silicon nitride (si).
Sumitomo Electric Industries, Ltd.

Low resistivity wrap-around contacts

Low resistivity, wrap-around contact structures are provided in nanosheet devices, vertical fets, and finfets. Such contact structures are obtained by delivering dopants to source/drain regions using a highly conformal, doped metal layer.
International Business Machines Corporation

Laser device integrated with semiconductor optical amplifier on silicon substrate

A laser device includes a silicon substrate, a buffer layer on the silicon substrate, a laser cavity on the buffer layer including a first active region based on group iii-v semiconductor quantum dots, and a semiconductor optical amplifier that is integrated with the laser cavity on the buffer layer, includes a second active region based on group iii-v semiconductor quantum dots, and amplifies light emitted from the laser cavity.. .
Samsung Electronics Co., Ltd.

Tensile strained nfet and compressively strained pfet formed on strain relaxed buffer

A tensile strained silicon layer and a compressively strained silicon germanium layer are formed on a strain relaxed silicon germanium buffer layer substrate. A relaxed silicon layer is formed on the substrate and the compressively strained silicon germanium layer is formed on the relaxed silicon layer.
International Business Machines Corporation

Process for fabricating silicon nanostructures

A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent hf and an oxidizing agent.. .
Advanced Silicon Group, Inc.

Semiconductor device, manufacturing the same, and power conversion system

An anode electrode and a cathode electrode formed on a silicon semiconductor substrate, p-type layer formed next to the anode electrode, an n-type layer formed next to the cathode electrode by a v-group element being diffused, an n− layer formed between the p-type layer and the n-type layer, and an n-buffer layer formed between the n− layer and the n-type layer and containing oxygen are provided and an oxygen concentration in an area of a width of at least 30 μm from a surface on a side of the n-type layer of the cathode electrode toward the anode electrode is set to 1×1017 cm−3 or more and also the oxygen concentration of the n− layer in a position in contact with the p-type layer is set to less than 3×1017 cm−3.. .
Hitachi Power Semiconductor Device, Ltd.

Image sensors with infrared-blocking layers

An image sensor may include an infrared radiation-blocking layer. The infrared radiation-blocking layer may block infrared radiation from reflecting off of metal layers formed beneath pixel structures in the image sensor so that the reflected light does not reach the photodiodes.
Semiconductor Components Industries, Llc

Finfet cut-last process using oxide trench fill

A cut-last process for cutting fin segments of a finfet structure on a substrate utilizes a two-step process. After the fins are formed, an oxide material is deposited in the trenches of the finfet structure.
Taiwan Semiconductor Manufacturing Company, Ltd.

Integrated iii-v device and driver device units and methods for fabricating the same

Integrated circuits, wafer level integrated iii-v device and cmos driver device packages, and methods for fabricating products with integrated iii-v devices and silicon-based driver devices are provided. In an embodiment, an integrated circuit includes a semiconductor substrate and a plurality of transistors in and/or overlying the semiconductor substrate.
Globalfoundries Singapore Pte. Ltd.

Method of manufacturing semiconductor integrated circuit device

A semiconductor integrated circuit device capable of stably forming a fuse element that is used to adjust the characteristics of the semiconductor integrated circuit device, and a method of manufacturing the semiconductor integrated circuit device are provided. The thickness of an interlayer insulating film above the fuse element is reduced by using an amorphous silicon layer that is formed by sputtering as a material of the fuse element, and by forming the amorphous silicon layer at the same time as metal wiring is formed.
Sii Semiconductor Corporation

Backside device contact

A method for fabricating a backside device contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer, includes forming a trench in the device layer. A trench is formed in the device layer.
International Business Machines Corporation

Backside device contact

A method for fabricating a backside device contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer, includes forming a trench in the device layer. The trench is filled with a contact plug.
International Business Machines Corporation

Backside device contact

A back-side device structure with a silicon-on-insulator substrate that includes: a first dielectric layer that includes a first via that communicates with a trench, a contact plug that fills the trench, and a first contact formed in a second dielectric layer. The first contact fills the first via and connects with the contact plug and a wire formed in a third dielectric layer.
International Business Machines Corporation

Method of forming a temporary test structure for device fabrication

A method of forming a temporary test structure for device fabrication is provided. The method allows for electrically testing conductive interconnects during controlled collapse chip connections (c4) fabrication and/or through-silicon vias (tsvs) during interposer fabrication.
International Business Machines Corporation

Method of forming a temporary test structure for device fabrication

A method of forming a temporary test structure for device fabrication is provided. The method allows for electrically testing conductive interconnects during controlled collapse chip connections (c4) fabrication and/or through-silicon vias (tsvs) during interposer fabrication.
International Business Machines Corporation

Manufacturing semiconductor device

A manufacturing method of a semiconductor device comprises a step of ion-implanting a p-type impurity at a first dose amount to form semiconductor regions that are low concentration semiconductor regions of a high breakdown voltage p-type transistor, and a step of ion-implanting a p-type impurity at a second dose amount to form p− semiconductor regions that are low concentration semiconductor regions of a low breakdown voltage p-type transistor and form a p-type impurity layer that is a resistance portion of a polysilicon resistor. The manufacturing method further comprises a resistance portion forming step in which a resistance portion of the polysilicon resistor is made thinner than terminal portions at both ends of the resistance portion, and the second dose amount is larger than the first dose amount..
Renesas Electronics Corporation

Fluoro-silicone compositions as temporary bonding adhesives

Fluoro-containing silicone-based storage stable temporary bonding adhesive compositions are disclosed. The adhesive compositions can be used in varied applications including, but not limited to, 3d chip integration, packaging applications, semiconductor devices, radio-frequency identification tags, chip cards, high-density memory devices, and microelectronic devices.
Dow Corning Corporation

Apparatus for manufacturing a silicon carbide wafer

Various embodiments provide a reaction chamber including a support, a receptacle, and a sponge. The support includes a plurality of bars that are spaced from each other by a plurality of openings.
Consiglio Nazionale Delle Ricerche-istituto Per La Microelettronica E Microsistemi

Substrate treating method and substrate treating device

A substrate treating method is for etching and washing a predetermined substrate. Specifically, the substrate treating method includes: an etching step of dissolving a silicon film provided on a substrate, by using an alkaline etching liquid of which temperature is higher than a normal temperature; and a washing step of washing the substrate after the etching step, by using warm water of which temperature is higher than the normal temperature..
Screen Holdings Co., Ltd.

Silicon carbide semiconductor device and manufacturing silicon carbide semiconductor device

A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a gate insulating film provided on a front surface of the silicon carbide semiconductor substrate and including any one or a plurality of an oxide film, a nitride film, and an oxynitride film, and a gate electrode containing poly-silicon and provided on the gate insulating film. A concentration of fluorine in the gate insulating film at an interface with the silicon carbide semiconductor substrate is equal to or higher than 1×1019 atoms/cm3..
Fuji Electric Co., Ltd.

Silicon carbide semiconductor device and manufacturing silicon carbide semiconductor device

A silicon carbide semiconductor device, including a silicon carbide semiconductor substrate, and an insulating film formed on a front surface of the silicon carbide semiconductor substrate. The silicon carbide semiconductor substrate has fluorine implanted therein, a concentration of which is in a range of 2×1017/cm3 to 4×1018/cm3.
Fuji Electric Co., Ltd.

Polysilicon residue removal in nanosheet mosfets

A method is presented for forming a semiconductor device. The method includes depositing a sacrificial layer on a fin structure formed on a substrate and then filled with polysilicon, etching a portion of the polysilicon material via a first etching process, and pre-cleaning the surface native oxide layer.
International Business Machines Corporation

Method for forming dielectric film and fabricating semiconductor device

A method of forming a dielectric film includes providing a substrate in a chamber, and forming a silicon nitride film on the substrate using an atomic layer deposition (ald) method in which a first gas including a silicon precursor containing hexachlorodisilazane (hcdz) and a second gas containing a nitrogen ingredient are introduced into the chamber.. .
Samsung Electronics Co., Ltd.

Method of manufacturing semiconductor device

Disclosed is a method of manufacturing a semiconductor device. The method includes: (a) accommodating a substrate having a plurality of carbon-containing films protruding from a surface of the substrate; (b) forming a silicon-containing film on a surface of the plurality of carbon-containing films and a surface of the substrate by supplying a silicon-containing gas to the substrate; (c) forming a silicon/oxygen-containing film by supplying a first plasma of an oxygen-containing gas to the substrate; and (d) forming a silicon oxide film by supplying a second plasma of the oxygen-containing gas to the substrate after performing (c)..
Hitachi Kokusai Electric Inc.

Multi-gate nor flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates

Multi-gate nor flash thin-film transistor (tft) string arrays (“multi-gate nor string arrays”) are organized as stacks of horizontal active strips running parallel to the surface of a silicon substrate, with the tfts in each stack being controlled by vertical local word-lines provided along one or both sidewalls of the stack of active strips. Each active strip includes at least a channel layer formed between two shared source or drain layers.
Sunrise Memory Corporation

Quantum metrology and quantum memory using defect states with spin-3/2 or higher half-spin multiplets

Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a vsi− monovacancy defect in silicon carbide are provided. Also provided are quantum memory devices and methods for creation of quantum memory using the spin states of a vsi− monovacancy defect in silicon carbide..
The Government Of The United States Of America, As Represented By The Secretary Of The Navy

Semiconductor device

A semiconductor device which reduces power consumption. In the semiconductor device, semiconductor chips are stacked over a base chip.
Renesas Electronics Corporation

Cleft palate diagnostic training set

A cleft palate diagnostic training set comprises silicone models of palates including a plurality of models which represent cleft palates and a plurality of model which represent normal, non-cleft palates.. .

Halftone phase shift mask blank and halftone phase shift mask

A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon is provided. The halftone phase shift film includes at least one layer composed of a silicon base material having a transition metal content≦3 at %, a si+n+o content≧90 at %, a si content of 30-70 at %, a n+o content of 30-60 at %, and an o content≦30 at %, and having a sheet resistance≦1013/Ω/□.
Shin-etsu Chemical Co., Ltd.

Halftone phase shift photomask blank, making method, and halftone phase shift photomask

During reactive sputtering using a silicon-containing target, an inert gas, and a nitrogen-containing reactive gas, a hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In the step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise.
Shin-etsu Chemical Co., Ltd.

Liquid crystal panel structure and manufacture method

The present invention provides a liquid crystal panel structure and a manufacture method. Both the first alignment layer of the upper layer and the second alignment layer of the lower substrate employ the silicon nitride films, of which the surfaces are implemented with ion beam bombardment, and in comparison with the utilization of pi alignment film material, the alignment layers possess the physical, chemical properties of silicon nitride, which are more stable, and thus can provide the better reliability for the liquid crystal panel; besides, the proper pre-tilted angle provided by the surface of the silicon nitride films with ion beam bombardment can be adjusted in a certain range, and thus can provide the proper pre-tilted angle for the liquid crystal molecules, and compared with the present psva technology, the procedure of utilizing the uv light irradiation to provide the pre-tilted angle for the liquid crystal is not required..
Shenzhen China Star Optoelectronics Technology Co. Ltd.

Integrated micro-channel heatsink in dmd substrate for enhanced cooling capacity

A dmd cooling apparatus and method includes a dmd chip configured on a substrate, and a heatsink located within and integrated into the substrate upon which the dmd is configured. A plurality of micro-channels can be formed on a backside of the substrate.
Xerox Corporation

Low loss heterogeneous optical waveguide transitions

Thus, embodiments of the invention describe optical devices created with a low loss transition from hybrid regions to silicon regions with fewer restrictions on the design of the silicon waveguides and the iii-v waveguides.. .

Back end of line process integrated optical device fabrication

An integrated optical device fabricated in the back end of line process located within the vertical span of the metal stack and having one or more advantages over a corresponding integrated optical device fabricated in the silicon on insulator layer.. .
Elenion Technologies, Llc

Method and assembly for determining the carbon content in silicon

A method of determining the carbon content in a silicon sample may include: generating electrically active polyatomic complexes within the silicon sample. Each polyatomic complex may include at least one carbon atom.
Infineon Technologies Ag

Thin-film thermocouple for measuring the temperature of a ceramic matrix composite (cmc) component

A thin-film thermocouple for measuring the temperature of a ceramic matrix composite (cmc) component comprises a first thermocouple leg and a second thermocouple leg deposited on a surface of a cmc component, where each of the first and second thermocouple legs has a length extending from a reference end to a working end thereof. The working ends of the first and second thermocouple legs are joined at a junction region on the surface.
Rolls-royce Corporation

Siliconized synthetic filament yarn

The invention provides a yarn that includes a plurality of synthetic filament plies bundled together in the form of a yarn strand, which is siliconized. Articles comprising the inventive yarn, and methods of making the inventive yarn are also provided..
Primaloft, Inc.

Method of producing carbide raw material

A method of producing a carbide raw material includes the steps of (a) providing a porous carbon material and a high-purity silicon raw material or a metal raw material and applying the porous carbon material and the high-purity silicon raw material or a metal raw material alternately to form a layer structure; (b) putting the layer structure in a synthesis furnace to undergo a gas evacuation process; and (c) producing a carbide raw material with a synthesis reaction which the layer structure undergoes in an inert gas atmosphere, wherein the carbide raw material is a carbide powder of a particle diameter of less than 300 μm, thereby preventing secondary raw material contamination otherwise arising from comminution, oxidation and acid rinsing.. .
National Chung Shan Institute Of Science And Technology

Method for manufacturing epitaxial silicon wafer

A method includes: a step of forming an oxide film on a backside of a silicon wafer; a step of removing the oxide film present at an outer periphery of the silicon wafer; a step of argon annealing in which a heat treatment is performed in an argon gas atmosphere; and a step of forming an epitaxial film on a surface of the silicon wafer, the step of forming the epitaxial film including: a step of pre-baking in which the silicon wafer is subjected to a heat treatment in an gas atmosphere containing hydrogen and hydrogen chloride to etch an outer layer of the silicon wafer; and a step of growing the epitaxial film on the surface of the silicon wafer.. .
Sumco Corporation

Monocrystalline diamonds and methods of growing the same

A monocrystalline diamond having a corrected full width at half maxima after accounting for the rayleigh width of a 514.5 nm laser, and exhibiting: a presence or absence of negatively-charged silicon vacancy defect depending on the diamond quality; a concentration level of neutral substitutional nitrogen at an absorption coefficient of 270 nm; an ftir transmittance value at a 10.6 μm wavelength; a concentration of positively-charged substitutional nitrogen when the peak height is at 1332.5 cm−1; an absence of nitrogen-vacancy-hydrogen defect species when the wavelength is at 3123 cm−1; normalisation of spectra when the first order raman peak is at 552.37 nm using 514.5 nm laser excitation; either a black or white sector and having a refractive index of retardation to thickness of diamond plates; or a reddish glow and a blue glow when the diamond is placed under 355 nm laser irradiation at room temperature in the dark.. .
Iia Technologies Pte. Ltd.

Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots

Methods for producing single crystal ingots having doped axial resistivity regions with different resistivities and methods for producing such ingots are disclosed. In some embodiments, first and second target resistivities are determined for first and second doped axial regions.
Corner Star Limited

Cleaning solution and cleaning material comprising carbon-incorporated silicon oxide for use in recycling wafer

It is an object of the present invention to provide a cleaning solution for removing carbon-incorporated silicon oxide (sioc) from the surface of a wafer in a step of producing a wafer having a material comprising the sioc, and a cleaning method of using the same. The cleaning solution of the present invention comprises 2% by mass to 30% by mass of a fluorine compound, 0.0001% by mass to 20% by mass of a specific cationic surfactant that is an ammonium salt or an amine, and water, and has a ph value of 0 to 4..
Mitsubishi Gas Chemical Company, Inc.

Phosphor and light emitting device

The present invention provides a phosphor, including a constituent having the formula capsrqmm-aa-bb—ot—nn:zr, in which m selected from the group consisting of magnesium, barium, beryllium and zinc; a selected from the group consisting of aluminum, gallium, indium, scandium, yttrium, lanthanum, gadolinium and lutetium; b selected from the group consisting of silicon, germanium, tin, titanium, zirconium and hafnium; z selected from the group consisting of europium and cerium; 0<p<1; 0≦q<1; 0≦m<1; 0≦t≦0.3; 0.00001≦r≦0.1; a=1, 0.8≦b≦1.2; and 2.7≦n≦3.1. Moreover, the normalized dissolved content of calcium of the phosphor is 1˜25 ppm, thereby obtaining a phosphor of high brilliance in the 600˜680 nm region.
Chi-mei Corporation

Silicone composition and manufacturing heat-conductive silicone composition

A silicone composition that contains an organopolysiloxane having at least two aliphatic unsaturated hydrocarbon groups per molecule, a filler containing an aluminum powder and a zinc oxide powder, an organohydrogenpolysiloxane having two or more sih groups per molecule, and a platinum group metal catalyst, in which when a storage and loss elastic modulus g″ of the silicone composition is measured by means a viscoelasticity measurement apparatus capable of measuring shear modulus, the silicone composition can provide a cured product wherein g′ after 3,000 seconds from the start of holding is 10,000 pa or less, g′ after 7,200 seconds from the start of holding is 100,000 pa or less, and g′ exceeds g″ after 800 seconds or more from the start of holding. As a result, there is provided a silicone composition excellent in crushability, spreadability, and heat conductivity..
Shin-etsu Chemical Co., Ltd.

Coating compositions comprising silicone

A coating composition comprising a silicone component is disclosed. The silicone component comprises a silicone comprising at least one silicon-bonded hydrogen and a silicone comprising at least one ethylenically unsaturated group.
Ppg Industries Ohio, Inc.

Corrosion-resistant epoxidized vegetable oil can interior coating

A coating composition comprising epoxidized vegetable oil, an amine terminated polyamide and a silicone resin is disclosed. Substrates coated at least in part with such coatings are also disclosed..
Ppg Industries Ohio, Inc.

Release agent composition for silicone adhesive, release film, and laminate

Provided is a release agent composition for silicone adhesives in which organopolysiloxane having a specific structure is added, as a heavy release component, to a release agent composition for silicone adhesives that includes organopolysiloxane modified with a fluorine-containing organic group.. .
Shin-etsu Chemical Co., Ltd.

Porous body, and producing porous body

According to the present invention, there are provided a porous body comprising a porous silicone substrate having communicating pores and a three-dimensional network silicone skeleton which forms the pores and which is formed by a copolymerization of a bifunctional alkoxysilane and a trifunctional alkoxysilane, and a polymeric cover material covering at least a part of a surface of the silicone skeleton, and an a method for producing the porous body. The porous body of the present invention has high flexibility and is strong to tension..
Nitto Denko Corporation

Method for preparing silicone resins containing hydroxy groups and alkoxy groups

The chlorohydrocarbon content of silicone resins prepared from alkoxysilanes is reduced by reacting alkoxysilane and 0.01-1 pbw chlorinated hydrocarbons with water at at least 50° c. And for at least 30 minutes, in the absence of a water immiscible solvent..
Wacker Chemie Ag

Silicone-modified polyurethane-based fiber and manufacturing same

Provided is a fiber formed from a resin containing a silicone-modified polyurethane resin. With the present invention, a characteristic fiber having excellent flexibility, slipping ability, blocking resistance, heat retaining property, water vapor permeability, water repellency, and spinnability can be provided..
Shinshu University, National University Corporation

Trichlorosilane purification producing polycrystalline silicon

There is provided trichlorosilane purification technology in which it is unnecessary to discharge large amounts of chlorosilanes oat of the system in the production of high-purity trichlorosilane from a chlorosilane fraction containing hydrocarbons and in which the reaction control can also be easily performed. In the present invention, the step of converting hydrocarbons contained in a chlorosilane fraction into low-boiling materials by thermal decomposition has been provided in the purification system in order to easily separate the hydrocarbons.
Shin-etsu Chemical Co., Ltd.

Polycrystalline silicon rod pair and producing polycrystalline silicon

Polycrystalline silicon is produced by depositing polycrystalline silicon onto u-shaped slim rods, deinstalling at least one polycrystalline silicon rod pair from the reactor, removing graphite residues from the electrode-side ends of the polycrystalline silicon rods of the polycrystalline silicon rod pair, and comminuting the polycrystalline silicon rods into rod pieces or into chunks, wherein prior to deinstallation of the polycrystalline silicon rod pairs from the reactor, the polycrystalline silicon rod pairs are at least partially with a plastics material bag made of a plastics material film having a thickness of more than 150 μm, wherein the plastics material bag comprises weights at its opening. The invention further relates to a polycrystalline silicon rod pair which has a rod diameter of 190 mm or more and is covered by a plastics material bag made of a plastics material film having a thickness of more than 150 μm..
Wacker Chemie Ag

Process for manufacturing a microelectronic device having a black surface, and microelectronic device

A roughened silicon surface is formed by a process including repetitively performed roughening cycles. Each roughening cycles including a step for depositing a non-planar polymeric layer over an area of a silicon body and a step for plasma etching the polymeric layer and the area of the silicon body etch in a non-unidirectional way.
Stmicroelectronics S.r.l.

Silicon carbide microelectromechanical structure, device, and method

Electromechanical device structures are provided, as well as methods for forming them. The device structures incorporate at least a first and second substrate separated by an interface material layer, where the first substrate comprises an anchor material structure and at least one suspended material structure, optionally a spring material structure, and optionally an electrostatic sense electrode.
The Charles Stark Draper Laboratory, Inc.

Apparatus and separating polysilicon-carbon chuck

Disclosed herein are an apparatus and a method for separating polysilicon from a carbon chuck. The apparatus carries out induction-heating by applying a high-frequency current on a carbon chuck with polysilicon adhering thereto (a polysilicon-carbon chuck) retrieved from a chamber for synthesizing polysilicon, to thereby selectively heat the carbon chuck.
Oci Company Ltd.

Protective film and electronic appliance including the same

Disclosed herein are a protective film having a structure capable of protecting an adherend and an electronic appliance including the same. The protective film includes a protection layer comprising polyolefin, and an adhesive layer laminated on the protection layer and comprising a silicone adhesive..
Samsung Electronics Co., Ltd.

Extrusion molded article, producing same, molding raw material for extrusion molding, and producing same

A method for producing an extrusion molded article, comprising a step of extruding a molding raw material to obtain an extrusion molded article, wherein the molding raw material is a mixture of a first liquid material including liquid silicone rubber, and a crosslinked particle obtained by dynamically crosslinking a second liquid material including liquid silicone rubber, the viscosity at 23° c. Of the first liquid material is less than 600 pa·s, and the viscosity at 23° c.
Shin-etsu Polymer Co., Ltd.

Patch

A patch includes an adhesive layer and a release liner laminated on at least one surface of a backing. The adhesive layer comprises, as an adhesive base agent, at least one selected from the group consisting of acrylate-based adhesives and rubber-based adhesives, and the adhesive layer comprises 0.3 to 5% by mass of a nonfunctional silicone oil having a kinematic viscosity of 10 to 350 cst at 25° c..
Hisamitsu Pharmaceutical Co., Inc.

Silyl polymeric benzoic acid ester compounds, uses, and compositions thereof

The present invention relates to organosilicon polymers containing benzoic acid esters in form of particles, process for their preparation, cosmetic or dermatological composition comprising them, as well as their use for protecting a human or animal living body from uv radiation.. .
Interquim, S.a.

Microcapsule compositions containing amino silicone

Disclosed is a microcapsule composition containing a microcapsule and an aminopolysiloxane. The microcapsule has an oil core including an active material and a capsule wall encapsulating the oil core.
International Flavors & Fragrances Inc.

Shin-etsu Chemical Co., Ltd.

. .

Process for protecting an electronic device by selective deposition of polymer coatings

Methods for protecting an electronic device from contaminants by applying different insulating and conducting materials to different vital components of a device are disclosed. In one embodiment, the method comprises applying an electrically insulating material, such as isobutylene isoprene rubber, to one or more connectors and components located on the printed circuit board of the device.

Semiconductor device and controlling semiconductor device

A semiconductor device comprises a first transistor with a silicon carbide layer between the source and the drain electrodes and between the gate and drain electrodes. A diode is formed in the silicon carbide layer.
Kabushiki Kaisha Toshiba

Cascode amplifier bias circuits

Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit.
Peregrine Semiconductor Corporation

Thermally compensating spot-size converter for an athermal laser

A laser includes a reflective gain medium (rgm) comprising an optical gain material coupled with an associated reflector. The rgm is coupled to a spot-size converter (ssc), which optically couples the rgm to an optical reflector through a silicon waveguide.
Oracle International Corporation

Cmos compatible rare-earth-doped waveguide amplifier

The present application is directed to a waveguide amplifier. The waveguide amplifier has a substrate including an upper surface and a lower surface.
Lgs Innovations Llc

Lithium-ion secondary battery and manufacturing the same

There is provided a lithium-ion secondary battery that includes a positive electrode including a sulfur-based positive active material containing at least sulfur and a negative electrode including a silicon-based negative active material containing at least silicon or a tin-based negative active material containing tin, in which lithium ions are easily implanted and moved. There is also provided a method of manufacturing the lithium-ion secondary battery.
Hitachi Chemical Company, Ltd.

Composite powder for use in an anode of a lithium ion battery, manufacturing a composite powder and lithium ion battery

Composite powder for use in an anode of a lithium ion battery, whereby the particles of the composite powder comprise a carbon matrix material and silicon particles embedded in this matrix material, characterized in that the composite powder further comprises silicon carbide.. .
Umicore

Porous silicon composite cluster and carbon composite thereof, and electrode, lithium battery, field emission device, biosensor and semiconductor device each including the same

A porous silicon composite cluster comprising: a porous core comprising a porous silicon composite secondary particle, wherein the silicon composite secondary particle comprises an aggregate of two or more silicon composite primary particles, and the silicon composite primary particles each comprise silicon, a silicon oxide of the formula siox, wherein 0<x<2, disposed on the silicon, and a first graphene disposed on the silicon oxide; and a shell disposed on and surrounding the core, the shell comprising a second graphene.. .
Samsung Sdi Co., Ltd.

Composite powder for use in an anode of a lithium ion battery, manufacturing a composite powder and lithium ion battery

Composite powder for use as electrochemically active material in an anode of a lithium ion battery, whereby the particles of the composite powder comprise a carbon-based matrix material and silicon particles embedded in this matrix material, whereby the silicon particles and the matrix material have an interface, characterized in that at this interface there are si—c chemical bonds present.. .
Umicore

High performance silicon electrodes having improved interfacial adhesion between binder, silicon and conductive particles

Methods for making a negative electrode material for use in an electrochemical cell, like a lithium ion battery, are provided. The electroactive material includes a functionalized surface having a grafted reactive group (e.g., an amino group, a carboxyl group, an anhydride group, and the like).
Gm Global Technology Operations Llc

Rechargeable battery and manufacturing the same

A rechargeable battery includes at least an electrolyte layer, a cathode layer and an anode layer. The electrolyte layer includes a lithium salt compound arranged between a cathode surface of the cathode layer and an anode surface of the anode layer.
Stichting Energieonderzoek Centrum Nederland

Silicon-based anode active material and preparation method therefor

The present invention relates to a silicon-based anode active material and a method of fabricating the same. The silicon-based anode active material according to an embodiment of the present invention comprises: particles comprising silicon and oxygen combined with the silicon, wherein a carbon-based conductive layer is coated with on outermost surface of the particles; and phosphorus doped in the particles, wherein a content of the phosphorus with respect to a total weight of the particles and the phosphorus doped in the particles have a range of 0.01 wt % to 15 wt %, and a content of the oxygen has a range of 9.5 wt % to 25 wt %..
Orange Power Ltd.

Organic el display device and manufacturing same

An organic el display device 1 includes: an organic el element 4 provided above an element substrate 10; and a sealing film 2 formed above the element substrate 10 so as to cover the organic el element 4, and made of silicon nitride (sinx). The sealing film 2 is comprised of a first sealing layer 25, a second sealing layer 26 provided on the surface of the first sealing layer 25, and a third sealing layer 27 provided on the surface of the second sealing layer 26.
Sharp Kabushiki Kaisha

Thermoelectric material, fabricating the same, and thermoelectric element using the same

Provided is a thermoelectric material including a metal silicide film, and silicon particles dispersed in the metal silicide film, the total volume of the silicon particles being greater than the volume of the metal silicide film.. .
Electronics And Telecommunications Research Institute

Thermoelectric material, manufacturing thermoelectric material, and thermoelectric converter

A thermoelectric material contains as a major ingredient a magnesium silicon alloy, a magnesium silicon tin alloy, a silicon or a silicon germanium alloy, and includes a porous body with a large number of pores.. .
Hakusan, Inc.

Semiconductor device

To achieve a high-reliability germanium photoreceiver. A photoreceiver portion of a germanium photoreceiver comprised of a p type silicon core layer, an i type germanium layer, and an n type silicon layer is covered with a second insulating film and from a coupling hole formed in the second insulating film, a portion of the upper surface of the photoreceiver portion is exposed.
Renesas Electronics Corporation

Manufacture of solar concentrator modules using a wafer precursor

A wafer precursor for creating photovoltaic (pv) concentrator modules and a method for fabricating solar concentrator modules using the wafer precursor. The method includes providing a crystalline silicon wafer substrate that can be used to make multiple concentrator cells to be incorporated into concentrator modules.
United States Of America As Represented By Secretary Of The Navy

Crystalline silicon solar cell module and manufacturing same

A crystalline silicon solar cell module includes a crystalline silicon solar cell and an interconnector. The interconnector is electrically connected to the crystalline silicon solar cell.
Kaneka Corporation

Method for producing a solar cell, in particular a silicon thin-film solar cell

A method for producing a solar cell, in particular a silicon thin-film solar cell, wherein a tco layer (3) is applied to a glass substrate (1) and at least one silicon layer (4, 5) is applied to the tco layer (3). Before the tco layer (3) is applied, electron radiation is applied to the glass substrate (1), such that a light-scattering layer (2) of the glass substrate (1) is produced, to which light-scattering layer the tco layer (3) is applied.
Lilas Gmbh

Silicon-based visible and near-infrared optoelectric devices

In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate.
President And Fellows Of Harvard College

Bulk to silicon on insulator device

A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of the bulk semiconductor substrate adjacent to the fin. The method further includes removing portions of the first insulator layer to reduce a thickness of the first insulator layer and expose a sidewall of the fin.
International Business Machines Corporation

Method of manufacturing soi lateral si-emitter sige base hbt

A soi lateral heterojunction si-emitter sige-base bipolar transistor is provided that contains an intrinsic base region that includes a small band gap region (i.e., a silicon germanium alloy base of a first conductivity type) and a large band gap region (i.e., a silicon region of the first conductivity type) a silicon emitter of a second conductivity type that is opposite the first conductivity type is formed on the large-band gap side of the intrinsic base region and a silicon collector of the second conductivity type is formed on the small-band gap side of the intrinsic base region.. .
International Business Machines Corporation

Method of junction control for lateral bipolar junction transistor

A method of controlling formation of junctions in a lateral bipolar junction transistor comprises: providing a starting substrate comprising a bulk silicon material as a handle substrate, a buried oxide layer on the handle substrate, and an intrinsic base semiconductor layer of germanium on the buried oxide layer; forming an extrinsic base layer on the intrinsic base semiconductor layer; etching at least a portion of the base layer; disposing a sidewall spacer on a side of the base layer; disposing a faceted germanium layer adjacent the sidewall spacer; recessing the faceted germanium layer and the intrinsic base semiconductor layer below the sidewall spacer; using a hot angle ion implantation technique to implant ions into a side of the intrinsic base semiconductor layer to form a junction edge/profile; annealing the implanted ions; and epitaxially growing a si or sige layer on the germanium layer and the junction edge/profile.. .
International Business Machines Corporation

Method of junction control for lateral bipolar junction transistor

A method of controlling formation of junctions in a lateral bipolar junction transistor comprises: providing a starting substrate comprising a bulk silicon material as a handle substrate, a buried oxide layer on the handle substrate, and an intrinsic base semiconductor layer of germanium on the buried oxide layer; forming an extrinsic base layer on the intrinsic base semiconductor layer; etching at least a portion of the base layer; disposing a sidewall spacer on a side of the base layer; disposing a faceted germanium layer adjacent the sidewall spacer; recessing the faceted germanium layer and the intrinsic base semiconductor layer below the sidewall spacer; using a hot angle ion implantation technique to implant ions into a side of the intrinsic base semiconductor layer to form a junction edge/profile; annealing the implanted ions; and epitaxially growing a si or sige layer on the germanium layer and the junction edge/profile.. .
International Business Machines Corporation

Nanosheet channel-to-source and drain isolation

A method and structures are used to fabricate a nanosheet semiconductor device. Nanosheet fins including nanosheet stacks including alternating silicon (si) layers and silicon germanium (sige) layers are formed on a substrate and etched to define a first end and a second end along a first axis between which each nanosheet fin extends parallel to every other nanosheet fin.
International Business Machines Corporation

Semiconductor device, manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

A semiconductor device according to an embodiment includes a silicon carbide layer, an insulating layer, and a region provided between the silicon carbide layer and the insulating layer, the region including a plurality of first atoms of one element from the group consisting of nitrogen (n), phosphorus (p), arsenic (as), antimony (sb), and bismuth (si), at least some of the plurality of first atoms being four-fold coordinated atoms and/or five-fold coordinated atoms.. .
Kabushiki Kaisha Toshiba

Semiconductor device with epitaxial source/drain

A semiconductor device and method of manufacturing the semiconductor device are provided. In some embodiments, the semiconductor device includes a fin extending from a substrate and a gate structure disposed over the fin.
Taiwan Semiconductor Manufacturing Co., Ltd.

Method of doped germanium formation

Implementations described herein generally relate to methods and systems for depositing layer on substrates, and more specifically, to methods for forming boron or gallium-doped germanium on silicon-containing surfaces. In one implementation, a method of processing a substrate is provided.
Applied Materials, Inc.

Compound semiconductor device, producing same, and resin-sealed type semiconductor device

In a semiconductor element having a compound semiconductor layer epitaxially grown on a silicon substrate, an object is to suppress generation of deficiency or problems of reliability deriving from the ends of the element that are generated when dividing into semiconductor devices by dicing. A compound semiconductor layer epitaxially grown on a silicon substrate is formed via a buffer layer made of aluminum nitride.
Panasonic Intellectual Property Management Co., Ltd.

Semiconductor device

A semiconductor device includes first, second, and gate electrodes. A first silicon carbide region of a first type is between the first and second electrodes and between the gate and second electrodes.
Kabushiki Kaisha Toshiba

Package oled substrate and oled package structure

The present invention provides a package method of an oled substrate and an oled package structure. In the package method, by manufacturing the passivation layer with two layers in the process of manufacturing the oled substrate, and the first layer is a regular silicon oxide layer, and the second layer is a silicon oxynitride layer, and the silicon oxynitride layer directly contacts with the seal, and the adhesion of the seal and the silicon oxynitride layer is stronger to promote the adhesion result of the seal and the oled substrate for achieving the result of raising the seal package performance.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Low temperature poly-silicon tft substrate structure and manufacture method thereof

A method for manufacturing a ltps tft substrate is provided. Buffer layers are respectively provided in a drive tft area and a display tft area and have different thicknesses, such that the thickness of the buffer layer in the drive tft area is larger than the thickness of the buffer layer in the display tft area so that different temperature grades are formed in a crystallization process of poly-silicon to achieve control of the grain diameters of crystals.
Shenzhen China Star Optoelectronics Technology Co. Ltd.

Semiconductor devices, memory dies and related methods

A semiconductor substrate is provided. Active areas and trench isolation regions are formed.
Micron Technology, Inc.

Method of forming semiconductor device including tungsten layer

A method of forming a semiconductor device includes forming a tungsten layer over a semiconductor substrate in a first chamber, transferring the substrate over which the tungsten layer is formed from the first chamber to a second chamber without exposing into an atmosphere including oxygen, and forming a silicon nitride layer on the tungsten layer in the second chamber.. .
Micron Technology, Inc.

Integrated circuit including balanced cells limiting an active area

An integrated circuit is provided, including: a first pair including a first nmos transistor and a first pmos transistor; a second pair including a second nmos transistor and a second pmos transistor; the first and the second nmos transistors including a channel region made of silicon that is subjected to tensile stress, and their respective gates being positioned at least 250 nm from a border of their active zone; and a third pair including a third nmos transistor having a same construction as the second nmos transistor and a third pmos transistor having a same construction as the first pmos transistor and having a tensile stress that is lower by at least 250 mpa than the tensile stress of the channel region, respective gates of the transistors of the third pair being positioned at most 200 nm from a border of their active zone.. .
Stmicroelectronics (crolles 2) Sas

Integrated circuit devices and methods of assembling the same

An integrated circuit (ic) device is described. The ic device includes a substrate.
General Electric Company

Chip alignment utilizing superomniphobic surface treatment of silicon die

Certain embodiments of the present disclosure provide a method for soldering a chip onto a surface. The method generally includes forming a bonding pad on the surface on which the chip is to be soldered, wherein the bonding pad is surrounded, at least in part, by dielectric material.
International Business Machines Corporation

Thin low defect relaxed silicon germanium layers on bulk silicon substrates

A strain relaxed silicon germanium layer that has a low defect density is formed on a surface of a silicon substrate without causing wafer bowing. The strain relaxed silicon germanium layer is formed using multiple epitaxial growing, bonding and transferring steps.
International Business Machines Corporation

Nickel-silicon fuse for finfet structures

Semiconductor fuses and methods of forming the same include forming a dummy gate on a semiconductor fin. A dielectric layer is formed around the dummy gate.
International Business Machines Corporation

Semiconductor device and its manufacturing method

In a semiconductor device having a capacitive element, an increase in a leak current caused by the generation of a parasitic mosfet is avoided by thinning the insulating film between the electrodes of the capacitive element and thickening the interlayer insulating film. The semiconductor device is provided with a capacitive element including a lower electrode formed on the main surface of the semiconductor substrate in the capacitive element region and an upper electrode formed just above the lower electrode through the silicon nitride film and an interlayer insulating film including a silicon oxide film, a silicon nitride film, and a silicon oxide film over the semiconductor substrate in a region different from the capacitive element region..
Renesas Electronics Corporation

Glass substrate and laminated substrate

The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 μm to 300 μm, and an inclination angle due to the warpage of 0.0004° to 0.12°..
Asahi Glass Company, Limited

Method for manufacturing a si-based high-mobility cmos device with stacked channel layers, and resulting devices

A device and method for manufacturing a si-based high-mobility cmos device is provided. The method includes the steps of: (i) providing a silicon substrate having a first insulation layer on top and a trench into the silicon; (ii) manufacturing a iii-v semiconductor channel layer above the first insulation layer by depositing a first dummy layer of a sacrificial material, covering the first dummy layer with a first oxide layer, and replacing the first dummy layer with iii-v semiconductor material by etching via holes in the first oxide layer followed by selective area growth; (iii) manufacturing a second insulation layer above the iii-v semiconductor channel layer and uncovering the trench; (iv) manufacturing a germanium or silicon-germanium channel layer above the second insulation layer by depositing a second dummy layer of a sacrificial material, covering the second dummy layer with a second oxide layer, and replacing the second dummy layer with germanium or silicon-germanium by etching via holes in the second oxide layer followed by selective area growth..
Imec Vzw

Fdsoi channel control by implanted high-k buried oxide

Methods of locally changing the box layer of a mosfet device to a high-k layer to provide different vts with one backside voltage and the resulting device are provided. Embodiments include providing a si substrate having a box layer formed over the substrate and a soi layer formed over the box layer; implanting a high current of dopants into at least one portion of the box layer; performing a high-temperature anneal of the box layer; forming first and second fully depleted silicon-on-insulator (fdsoi) transistors on the soi layer, the first fdsoi transistors formed above either the box layer or the at least one portion of the box layer and the second fdsoi transistors formed above the at least one portion of the box layer; and applying a single voltage across a backside of the si substrate..
Globalfoundries Inc.

Manufacturing semiconductor device and semiconductor device

A photoresist pattern is not formed in an outer circumferential region from an outer circumferential end of a semiconductor substrate up to 0.5 mm to 3.0 mm, in a process for patterning a silicon oxide film which will serve as a hard mask. A part of the silicon oxide film which is positioned in the outer circumferential region is removed, thereby exposing the semiconductor substrate, in a process for performing an etching process for patterning the silicon oxide film.
Renesas Electronics Corporation

Plasma processing method

The present invention provides a plasma processing method for subjecting a sample on which a metal element-containing film is disposed to plasma etching in a processing chamber. The method comprises: subjecting an inside of the processing chamber to plasma cleaning using a boron element-containing gas; removing the boron element using plasma after the plasma cleaning; subjecting the inside of the processing chamber to plasma cleaning using a fluorine element-containing gas after removing the boron element; depositing a deposited film in the processing chamber by plasma using a silicon element-containing gas after the plasma cleaning using the fluorine element-containing gas; and subjecting the sample to plasma etching after depositing the deposited film..
Hitachi High-technologies Corporation

Methods for selective etching of a silicon material using hf gas without nitrogen etchants

The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including hf gas without nitrogen etchants to remove a silicon material disposed on a substrate..
Applied Materials, Inc.

Silicon carbide semiconductor substrate, manufacturing silicon carbide semiconductor substrate, semiconductor device, and manufacturing semiconductor device

A silicon carbide semiconductor substrate includes a silicon carbide substrate of a first conductivity type, an epitaxial layer of the first conductivity type provided on a front surface of the silicon carbide substrate, an impurity concentration of the epitaxial layer being 1×1017/cm3 to 1×1018/cm3, and a film thickness of the epitaxial layer being 1 μm to 5 μm. The silicon carbide semiconductor substrate further includes a buffer layer of the first conductivity type provided on a surface of a first side of the epitaxial layer opposite a second side facing the silicon carbide substrate, an impurity concentration of the buffer layer being about a same as that of the silicon carbide substrate, and a drift layer of the first conductivity type provided on a surface of a first side of the buffer layer opposite a second side facing toward the silicon carbide substrate, an impurity concentration of the drift layer being lower than that of the buffer layer..
Fuji Electric Co., Ltd.

Atomic layer deposition of silicon carbon nitride based materials

A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a sin sub-cycle and a sicn sub-cycle. The sin sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a sin sub-cycle nitrogen precursor.
Asm Ip Holding B.v.

Integrated source/drain engineering

Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise group iv source/drain growth in semiconductor devices.
Applied Materials, Inc.

Electrode material for electronic device and electronic device comprising the same

An electrode material according to one exemplary embodiment of the present invention includes a silicon carbide powder including mesopores having a diameter of 2 to 50 nm and micropores having a diameter of 2 nm or less.. .
Lg Innotek Co., Ltd.

Multilayer ceramic electronic component and manufacturing method therefor

A multilayer ceramic electronic component includes a first organic layer located on both principal surfaces and both side surfaces in contact with a first external electrode, and a second organic layer located on the both principal surfaces and the both side surfaces in contact with a second external electrode. The first organic layer includes an organic silicon compound and covers an end of a first base electrode layer of the first external electrode, and the second organic layer includes an organic silicon compound and covers an end of a second base electrode layer of the second external electrode.
Murata Manufacturing Co., Ltd.

Monolithically integrated system on chip for silicon photonics

The present invention provides an integrated system-on-chip device. The device is configured on a single silicon substrate member.
Inphi Corporation

Gasket with embedded capacitive sensor

An electronic device is disclosed. In some examples, the device includes one or more force sensors at its perimeter.
Apple Inc.

Process for producing contact lenses with durable lubricious coatings thereon

The invention is related to a method for producing soft contact lenses comprises a silicone hydrogel lens body and a composite coating thereon. The composite coating comprises: a plasma base coating which is chemically-attached directly onto the surface of the silicone hydrogel contact lens and functions as a fail-proof measure for ensuring the hydrophobic silicone hydrogel lens material to be shielded from any exposure to ocular environments even after at least 30 days of daily uses including daily waring and daily cleaning/disinfecting; and a relatively-durable lubricious hydrogel top coating for ensuring wearing comfort.
Novartis Ag

Bent taper with varying widths for an optical waveguide

A soi bent taper structure is used as a mode convertor. By tuning the widths of the bent taper and the bend angles, almost lossless mode conversion is realized between te0 and te1 in a silicon waveguide.
Elenion Technologies, Llc

Photonic integration by flip-chip bonding and spot-size conversion

Two or more monolithic or heterogeneously integrated substrates are attached to each other and optically edge-coupled using spot-size converters. Spot-size converters are placed between planar optical waveguides and cleaved or etched facets in each substrate.
Biond Photonics Inc.

Compact and low loss y-junction for submicron silicon waveguide

A compact, low-loss and wavelength insensitive y-junction for submicron silicon waveguides. The design was performed using fdtd and particle swarm optimization (pso).
Elenion Technologies, Llc

Electronic device with light diffuser

An electronic device may have an optical system that includes one or more light-based components. The light-based components may include light-emitting components such as light-emitting diodes or lasers and may include light-detecting components such as photodiodes or digital image sensors.
Apple Inc.

Optical system for head-mounted display system

Systems and methods for providing optical systems which utilize double fresnel lenses on curved surfaces for use with display systems, such as silicon-based micro display systems (e.g., oled micro displays) used with head mounted display (hmd) systems. The optical systems disclosed herein may implement multiplexing or blending to provide a smooth profile transition and reduce aberrations between zones or fields (e.g., small fov angles, large fov angles) of a fresnel surface which is defined by multiple fresnel patterns or functions.
Valve Corporation

Six-degree-of-freedom displacement measurement exposure region on silicon wafer stage

A six-degree-of-freedom displacement measurement method for an exposure region on a wafer stage, the wafer stage comprises a coil array and a movable platform. A planar grating is fixed below a permanent magnet array of the movable platform.
Beijing U-precision Tech Co., Ltd.

Mechanical seed coupling

An apparatus and method of manufacturing silicon seed rod in which two silicon seeds are joined into one long silicon seed rod by mechanical coupling. A mechanical seed coupler is a body in having an outer wall, an upper surface with an upper aperture, a lower surface with a lower aperture, and an inner wall surrounding an inner space.
Mitsubishi Materials Corporation

Silicon-based materials containing gallium and methods of forming the same

A ceramic component is generally provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and about 0.001% to about 85% of a ga-containing compound. For example, the silicon-based layer can be a bond coating directly on the surface of the substrate.
General Electric Company

Reaction chamber passivation and selective deposition of metallic films

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon.
Asm Ip Holding B.v.

Compositions containing gallium and/or indium and methods of forming the same

A composition is provided that includes a silicon-containing material (e.g., a silicon metal and/or a silicide) and about 0.001% to about 85% of a ga-containing compound, an in-containing compound, or a mixture thereof. The silicon-based layer can be a bond coating directly on the surface of the substrate.
General Electric Company

Resin composition for electric/electronic component

A resin composition which includes: (a) a polyorganosiloxane that contains a mercaptoalkyl group bonded to a silicon atom and has a viscosity at 23° c. Of 20 to 3,000 cp; (b) a polyorganosiloxane containing an aliphatic unsaturated group; (c) a photoreaction initiator; (d) a chemically surface-treated silica having a bet specific surface area of 50 to 250 m2/g and a ph of 5.0 to 9.0; and (e) a polyoxyalkylene glycol, and/or a derivative of the polyoxyalkylene glycol.
Momentive Performance Materials Japan Llc

Rubber compositions including siliceous fillers

Vulcanizates with desirable properties can be obtained from compositions incorporating polymers that include hydroxyl group-containing aryl functionalities, silica or other particulate filler(s) that contain or include oxides of silicon and a group or compound that can act to covalently bond the filler particles and the polymer. The group can be provided as a substituent of the filler particle, or a discreet compound can be provided in the composition..
Bridgestone Corporation

Method for producing a water-soluble thermally-crosslinkable polymeric material

The invention is related to a cost-effective method for producing water-soluble thermally-crosslinkable hydrophilic polymeric materials. Resultant materials can find particular use in preparing a packaging solution used for packaging and autoclaving medical devices, especially contact lenses.
Novartis Ag

Organopolysiloxane, production method thereof, and curable silicone composition

An organopolysiloxane represented by the following average unit formula: (r1sio3/2)a(xr22sio1/2)b(o1/2sir22—y—r22sio1/2)c is provided. R1 and r2 each individually represent a c1-c20 alkyl group, c6-c20 aryl group, or c7-c20 aralkyl group.
Dow Corning Toray Co., Ltd.

High-ri siloxane monomers, their polymerization and use

Phenoxyphenylsilane monomers were synthesized and polymerized. The polymers have high refractive indices and excellent uv and thermal stability.
Inkron Oy

Silicon-based materials containing boron

A ceramic component is provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume of the boron-doped refractory compound). A coated component is also provided that includes a cmc component defining a surface; a bond coating directly on the surface of the cmc component, with the bond coating comprises a silicon-containing material and a boron-doped refractory compound (e.g., about 0.1% to about 25% of the boron-doped refractory compound); a thermally grown oxide layer on the bond coating; and an environmental barrier coating on the thermally grown oxide layer..
General Electric Company

Silicon-based materials containing indium and methods of forming the same

A ceramic component is generally provided that includes a silicon-based layer comprising a silicon-containing material (e.g., a silicon metal and/or a silicide) and about 0.001% to about 85% of an in-containing compound. For example, the silicon-based layer can be a bond coating directly on the surface of the substrate.
General Electric Company

Silicon compositions containing boron and methods of forming the same

A composition is generally provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and a boron-doped refractory compound, such as about 0.001% to about 85% by volume of the boron-doped refractory compound (e.g., about 1% to about 60% by volume). In one embodiment, a bond coating on a surface of a ceramic component is generally provided with the bond coating including such a composition, with the silicon-containing material is silicon metal..
General Electric Company

Tin oxide overcoat indium tin oxide coatings, coated glazings, and production methods

The invention provides transparent conductive coatings based on indium tin oxide. The coating has a tin oxide overcoat.
Cardinal Cg Company

Silicon compositions containing boron and methods of forming the same

A compound is provided that has the formula: ln4-x-zbxdzm2-n-yanbyo9, where ln comprises la, ce, pr, nd, pm, sm, or a mixture thereof; x is 0 to about 2; d is la, ce, pr, nd, pm, sm, eu, gd, tb, dy, ho, er, tm, yb, lu, or a mixture thereof, where: d is not equal to ln; if d is la, ce, pr, nd, pm, sm, or a mixture thereof, then z is 0 to less than 4; if d is eu, gd, tb, dy, ho, er, tm, yb, lu, or a mixture thereof, then z is 0 to about 2; m comprises ga, al, or a combination thereof; a comprises fe, in, or a combination thereof; n is 0 to about 1; y is 0 to about 1; and x+y is greater than 0. In one embodiment, a composition is generally provided that includes a silicon-containing material and such a boron-doped refractory compound..
General Electric Company

Boron doped rare earth metal oxide compound

A compound is generally provided that has the formula: ln3-xbxm5-ybyo12, where ln comprises sc, y, la, ce, pr, nd, pm, sm, eu, gd, tb, dy, ho, er, tm, yb, lu, or a mixture thereof; x is 0 to about 1.5; m comprises ga, in, al, fe, or a combination thereof; y is 0 to about 2.5; and x+y is greater than 0. A composition is also provided that includes a silicon-containing material (e.g., silicon metal and/or a silicide) and the boron-doped refractory compound having the formula described above, such as about 0.001% to about 85% by volume of the boron-doped refractory compound..
General Electric Company

Liquid ejecting head, liquid ejecting apparatus, and manufacturing liquid ejecting head

Provided is a liquid ejecting head including: a first substrate in which a space serving as a flow path is formed in a state of having an opening on a surface of one side thereof; and a second substrate which seals the opening from the surface on the one side of the first substrate, divides the flow path, and is made of resin, in which the first substrate and the second substrate adhere to each other via a first adhesive layer which is laminated on the surface on the one side of the first substrate and which is made of a silicone-based adhesive and a second adhesive layer which is laminated on the first adhesive layer and which is made of an epoxy-based adhesive.. .
Seiko Epson Corporation

Paint protection film

A paint protection film, including: (a) a coating layer formed by using a silicon-containing fluororesin and an isocyanate-based crosslinker; (b) a urethane layer; and (c) an adhesive layer.. .

Hydrogel contact lenses with lubricious coating thereon

The invention is generally related to soft contact lenses which comprise a non-silicone hydrogel lens body and a hydrogel coating thereon. The non-silicone hydrogel lens body is composed of a hydrogel material which is free of silicone and comprises at least 50% by mole of repeating units of at least one hydroxyl-containing vinylic monomer.
Novartis Ag

Colored hydrogel contact lenses with lubricious coating thereon

The invention is generally related to colored contact lenses which comprise a hydrogel lens body having an opaque color image therein and/or thereon and a durable lubricious coating thereon. The coating comprises an anchoring layer of a polyanionic polymer having carboxyl groups and a hydrogel layer which is derived from a hydrophilic polymeric material having azetidinium groups and is covalently attached onto the anchoring layer of the polyanionic polymer through linkages each formed between one carboxyl group and one azetidinium groups.
Novartis Ag

Method and separating one or more components from a composition

The present invention relates to methods of separating one or more components from a feed composition, methods of desorbing one or more components from an absorbent fluid, as well as systems and apparatus that can carry out the methods. In one embodiment, the present invention provides a method of separating one or more components from a feed composition including contacting at least some of a first component of a feed composition including the first component with an absorbent fluid, to provide a contacted composition and a used absorbent fluid including at least some of the first component contacted with the absorbent fluid.
Dow Corning Corporation

Protective mask

Provided is a protective mask that is highly comfortable to wear. A protective mask includes: a face piece; an eyepiece attached to the face piece; and a lip extending from an outer circumference of the face piece in a direction crossing the face piece, in which at least a part of the lip includes a face contact portion capable of coming into contact with a face of a wearer, the face contact portion is formed from a silicone rubber, the face piece and the lip are formed from a gas impermeable material except for the face contact portion, and the gas impermeable material and the silicone rubber are joined together along the boundary between the gas impermeable material and the silicone rubber..
Koken Ltd.

Aminofunctional organosiloxanes

Aminofunctional silicone compositions are disclosed comprising: an organopolysiloxane having an average formula of (ch3)3sio[(ch3)2sio]x[(ch3)rnsio]ysi(ch3)3 with less than 1 weight % of nitrogen in its formula, where rn is an aminofunctional group, x is ≧100, y is ≧1 with the proviso the sum of x+y is from 250 to 350; wherein the viscosity of the silicone composition ranges from 1000 to 2500 cp at 25° c. And is measured by a brookfield rv dv viscometer equipped with pro cp 52 spindle at 20 rpm; and the aminofunctional silicone composition contains less than 0.1 weight % of d4 and less than 0.1 weight % d5 cyclic siloxanes..
Dow Corning Corporation

Transdermal delivery of cannabidiol with other active moieties including cannabinoids

Transdermal delivery devices for the delivery of cannabidiol (cbd) and related moieties are shown and described. In a reservoir-patch design, a microporous, hydrophilic membrane and a backing define a reservoir that houses a mixture of cbd, a polar liquid, and a gelling agent, along with other moieties that seem to be enhanced or bioavailability of increased by the same.
Life Tech Global, Llc

Fluid compositions and personal care

A fluid composition comprises i) a first component and ii) second component different from the first component i). The first component i) comprises at least one copolymer.
Dow Corning Corporation

Anti-reflective coating on oxide particles for sunscreen applications

Zinc oxide compositions and methods for applying anti-reflective coating on oxide particles for sunscreen applications are provided herein. A composition includes multiple zinc oxide particles suspended within a medium forming sunscreen composition, and coating materials applied to each of the multiple zinc oxide particles in distinct layers via a gradation based on refractive index, wherein each of the coating materials has a refractive index that is between the refractive index of air and the refractive index of zinc oxide, and wherein the coating materials comprise a combination of (i) silicon dioxide, (ii) magnesium fluoride, (iii) one or more fluoropolymers, (iv) aluminum oxide, (v) zinc sulfide, and (vi) titanium dioxide..
International Business Machines Corporation

Pituitous silicone emulsions

The present invention provides methods for preparing emulsions of silicone fluids having pituitous rheological properties. The present invention also provides emulsions of a silicone fluid having pituitous rheological properties and composition comprising the emulsions.
Dow Corning Corporation

Container for a solution of human plasma proteins and obtaining thereof

A container for a solution of human plasma proteins has a primary inner bag made up of a first multilayer polymer film with two outer layers of polyethylene (pe) and an intermediate layer of ethylene vinyl alcohol (evoh) copolymer, and a secondary outer bag made up of a second multilayer film with layers of polyethylene terephthalate (pet)-silicon oxides (siox), oriented polyamide (opa), polypropylene (pp)-silicon oxides (siox) and polypropylene (pp), referred to as multilayer pp-siox.. .
Grifols, S.a.

Intraocular drainage device

An intraocular drainage device may include a monolithic silicone body having a flap, a rigid bottom plate having a portion configured to contact a corresponding portion of the flap, and a tube having a proximal end disposed between the flap and the rigid bottom plate. The corresponding portion of the flap may be configured to separate from the portion of the rigid bottom plate responsive to a fluid pressure in aqueous humor received from the tube.
New World Medical, Inc.

Flexible neural probes

Embodiments include microelectrodes including a flexible shank and a bioabsorbable material surrounding the flexible shank. The flexible shank can include a flexible substrate, a circuit, and a plurality of sensors.
International Business Machines Corporation

Flexible neural probes

Embodiments include microelectrodes including a flexible shank and a bioabsorbable material surrounding the flexible shank. The flexible shank can include a flexible substrate, a circuit, and a plurality of sensors.
International Business Machines Corporation

Flexible neural probes

Embodiments include microelectrodes including a flexible shank and a bioabsorbable material surrounding the flexible shank. The flexible shank can include a flexible substrate, a circuit, and a plurality of sensors.
International Business Machines Corporation

. .

Topical pharmaceutical cosmetic and disinfectant compositions comprising phosphatidylcholine

A topical carrier consists of 99% by weight or more of phosphatidylcholine and volatile solvent selected from the group consisting of: ethanol and its combinations with c3-and/or c4-alcohol and/or volatile silicone oil. The carrier may additionally comprise up to 1% by weight of antioxidant, colorant, odorant, and/or preservative, and up to 2% by weight of denaturant.
Eternal Plant Boijl B.v.

The Boeing Company

. .

Shin-etsu Chemical Co., Ltd.

. .

Wearable device

To provide a wearable device a part of which directly comes in contact with the skin of a living body includes silicone foam and which is excellent in durability and comfortability. An earpiece 150 includes a core 152 that is attached to a sound conduit 140, and an ear canal attachment section 156 that is attached to an outer side of the core 152 and comes into contact with an ear canal inner wall of a wearer.
Sony Corporation

Transconductance (gm) cell based analog and/or digital circuitry

Transconductance (gm)-cell based circuitry is well suited for low power, low voltage complementary metal oxide silicon (cmos) design in deep sub micro technology. This circuitry includes a gm cell as the basic building block.
Avago Technologies General Ip (singapore) Pte. Ltd.

Current protected integrated transformer driver for isolating a dc-dc convertor

An improved electronic oscillator circuit suitable for use in an isolating dc-to-dc converter circuit, and an improved isolating dc-to-dc converter circuit. In one embodiment, an integrated circuit coupled to a transformer includes an oscillator and an output driver.
Peregrine Semiconductor Corporation

Dc-dc converter device

A dc-dc converter includes an insulating substrate; a magnetic core embedded in the insulating substrate, the magnetic core having non-zero x, y and z dimensions of less than or equal to about 5.4 mm by about 5.4 mm by about 1.8 mm; separate primary and secondary transformer windings surrounding first and second regions of the magnetic core; and a control circuit including: an oscillator; a drive circuit coupled to the oscillator; and one or more switches coupled to the drive circuit; the drive circuit providing a switching signal to the one or more switches and energizing the one or more switches to provide a drive voltage to the primary transformer winding. The one or more switches are field effect transistors implemented in a silicon-on-insulator configuration or as a silicon-on-sapphire configuration..
Murata Manufacturing Co., Ltd.

Electrode and power storage device

A novel electrode, a novel power storage device, an electrode with less deterioration, an electrode with a high capacity, a long-life power storage device, a power storage device with less deterioration, a power storage device with high energy density, or a highly reliable power storage device is provided. The electrode includes a graphene compound including a graphene layer and a substituted or unsubstituted chain group, and an active material.
Semiconductor Energy Laboratory Co., Ltd.

Nitrile-substituted silanes and electrolyte compositions and electrochemical devices containing them

Described herein are liquid, organosilicon compounds that including a substituent that is a cyano (—cn), cyanate (—ocn), isocyanate (—nco), thiocyanate (—scn) or isothiocyanate (—ncs). The organosilicon compounds are useful in electrolyte compositions and can be used in any electrochemical device where electrolytes are conventionally used..
Silatronix, Inc.

Conductive polymer binder for a novel silicon/graphene anode in lithium ion batteries

A composite electrode prepared from silicon-graphene material and conductive polymer binder poly (1-pyrenemethyl methacrylate-co-methacrylic acid) for use in lithium-ion batteries.. .
Bayerische Motoren Werke Aktiengesellschaft

Porous silicon materials and conductive polymer binder electrodes

A composite electrode prepared from porous silicon and conductive polymer binders for use in lithium-ion batteries.. .
Bayerische Motoren Werke Aktiengesellschaft

Electrode, producing an electrode and energy store having an electrode

A method for producing an electrode having an electrically conductive base element on which there is arranged an active material comprising a silicon nanostructure includes introducing a precursor mixture comprising a silicon-containing material and a base matrix into a spinning unit, arranging an electrically conductive base body at a defined distance from a delivery device of the spinning unit, and delivering at least part of the precursor mixture from the delivery device to the base body. The method further includes applying an electrical voltage between at least part of the spinning unit and the base body so as to spin a silicon-containing nanostructure onto the base body, heat-treating the silicon-containing nanostructure, removing the heat-treated nanostructure from the base body, processing the removed nanostructure to a slurry, and applying the slurry to the base element to produce the electrode..
Robert Bosch Gmbh

Organic monolayer passivation and silicon heterojunction photovoltaic devices using the same

A method for inorganic surface passivation in a photovoltaic device includes etching a native oxide over an inorganic substrate, the inorganic substrate having a surface; and forming an organic monolayer on the surface of the inorganic substrate to form a heterojunction, the organic monolayer having the following formula: ˜x—y, wherein x is an oxygen or a sulfur; y is an alkyl chain, an alkenyl chain, or an alkynyl chain; and x covalently bonds to the surface of the inorganic substrate by a covalent bond.. .
International Business Machines Corporation

Cem switching device

Subject matter herein disclosed relates to a method for the manufacture of a switching device comprising a silicon-containing correlated electron material. In embodiments, processes are described for forming the silicon-containing correlated electron material.
Arm Limited

Silicon-containing semiconductor structures, methods of making the same and devices including the same

A semiconductor system includes a silicon substrate and a porous silicon region disposed on the silicon substrate. The porous silicon region is configured to passivate the surface of the silicon substrate via a field effect and to reduce reflection loss on the silicon substrate via an appropriate refractive index.
Specmat, Inc.

Solar cell

According to one embodiment of the present invention, a solar cell is provided with an n-type crystalline silicon substrate, and a passivation layer formed on the light receiving surface of the substrate, said passivation layer having a carrier generating function. The n-type crystalline silicon substrate has a doped layer in the vicinity of an interface to the passivation layer, said doped layer being doped to have a conductivity type equal to that of the substrate, and being doped at a dopant concentration equal to or higher than 1×1017 cm−3.
Panasonic Intellectual Property Management Co., Ltd.

Thin-film transistor, manufacturing the same, and display device

A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region.
Joled Inc.

Finfet with reduced series total resistance

Selective epitaxial growth is used to form a hetero-structured source/drain region to fill an etched recess in a silicon fin for an n-type finfet device.. .
Qualcomm Incorporated

Method of contact formation between metal and semiconductor

Implementations of the present disclosure generally relate to improved semiconductor devices and methods of manufacture thereof. More specifically, implementations disclosed herein relate to a semiconductor device having an improved contact interface between the semiconductor material and metal material and methods of manufacture thereof.
Applied Materials, Inc.

Closed cell lateral mosfet using silicide source and forming

A closed cell lateral mosfet device includes minimally sized source/body contacts formed in source cells with silicided source and body diffusion regions formed therein. In this manner, the cell pitch of the cellular transistor array is kept small while the ruggedness of the transistor is ensured.
Alpha And Omega Semiconductor Incorporated

Semiconductor device and manufacturing semiconductor device

A mos gate having a trench gate structure is formed on the front surface side of a silicon carbide substrate. A gate trench of the trench gate structure goes through an n+ source region and a p-type base region and reaches an n− drift region.
Fuji Electric Co., Ltd.

Semiconductor device

A semiconductor device includes: a first nitride semiconductor layer, a second nitride semiconductor layer that is provided on the first nitride semiconductor layer and has a band gap larger than a band gap of the first nitride semiconductor layer, a gate electrode that is provided on the first nitride semiconductor layer, a first electrode that is electrically connected to the first nitride semiconductor layer, a second electrode disposed such that the gate electrode is positioned between the first electrode and the second electrode, and electrically connected to the first nitride semiconductor layer, and a first insulation layer that is provided between the gate electrode and the second electrode, disposed such that the second nitride semiconductor layer is positioned between the first nitride semiconductor layer and the first insulation layer, and including silicon oxide having an oxygen-to-silicon atomic ratio (o/si) of 1.50 or more and 1.85 or less.. .
Kabushiki Kaisha Toshiba

Semiconductor memory device and manufacturing the same

According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a semiconductor portion, and an insulating portion. The insulating portion is provided in the stacked body and extends in a stacking direction and a first direction along a surface of the substrate, the first direction crossing the stacking direction.
Toshiba Memory Corporation

Oxide semiconductor, semiconductor device, semiconductor memory device, and solid-state imaging device

According to one embodiment, an oxide semiconductor includes indium (in), gallium (ga), and silicon (si). A composition ratio of si to in (si/in) in the oxide semiconductor is larger than 0.2, and a composition ratio of si to ga (si/ga) in the oxide semiconductor is larger than 0.2..
Kabushiki Kaisha Toshiba

Silicon carbide semiconductor device

An embodiment of a silicon carbide semiconductor device includes one or more inner cells each having a mosfet and one or more outer peripheral cells that does not have a mosfet structure, and the area (surface area) of the p+ contact region of each of the outermost peripheral cells is less than the surface area of an p+ contact region of each of the inner cells, for example, so that a unit total resistance of p+ contact regions of the outermost peripheral cells, as measured in a depth direction of the semiconductor substrate with respect to a unit area in a surface of the semiconductor substrate, is greater than a unit total resistance of the p+ contact regions of the inner cells, as measured in the depth direction of the semiconductor substrate with respect to the unit area in the surface of the semiconductor substrate.. .
Fuji Electric Co., Ltd.

Semiconductor device and semiconductor substrate

A semiconductor device includes: a nitride semiconductor layer; a silicon substrate including a first region of a first conductivity type, a second region of a second conductivity type provided between the first region and the nitride semiconductor layer, a third region of the first conductivity type provided between the second region and the nitride semiconductor layer, a fourth region of the second conductivity type provided between the third region and the nitride semiconductor layer, a fifth region of the first conductivity type provided between the fourth region and the nitride semiconductor layer, and a sixth region of the second conductivity type provided between the fifth region and the nitride semiconductor layer; a first electrode, the nitride semiconductor layer being located between the silicon substrate and the first electrode; and a second electrode that is spaced from the first electrode and located between the silicon substrate and the second electrode.. .
Kabushiki Kaisha Toshiba

Silicon carbide semiconductor device and manufacturing same

A drift layer of a first conductivity type is made of silicon carbide. A body region of a second conductivity type is provided on the drift layer.
Mitsubishi Electric Corporation

Semiconductor devices and methods for forming the same

A semiconductor device and a method for forming the same are provided. The method includes forming a patterned mask on a substrate, wherein the patterned mask includes a pad oxide layer and a silicon nitride layer over the pad oxide layer.
Vanguard International Semiconductor Corporation

Powermos

A process of manufacturing a device is disclosed. The process includes forming an epitaxial layer of a first conductivity type on in a substrate, forming a first vertical section of a second conductivity type in the expitaxial layer, creating a first vertical trench through etching vertically next to the first vertical section, filling the first vertical trench with a first type oxide, forming a second vertical trench in the first vertical trench.
Nexperia B.v.

Integrated trench capacitor

A deep trench capacitor and a method for providing the same in a semiconductor process are disclosed. The method includes forming a plurality of deep trenches in a first region of a semiconductor wafer, the first region having well doping of a first type.
Texas Instruments Incorporated

Backside-illuminated color image sensors with crosstalk-suppressing color filter array

A backside-illuminated color image sensor with crosstalk-suppressing color filter array includes (a) a silicon layer including an array of photodiodes and (b) a color filter layer on the light-receiving surface of the silicon layer, wherein the color filter layer includes (i) an array of color filters cooperating with the array of photodiodes to form a respective array of color pixels and (ii) a light barrier grid disposed between the color filters to suppress transmission of light between adjacent ones of the color filters. The light barrier is spatially non-uniform across the color filter layer to account for variation of chief ray angle across the array of color filters.
Omnivision Technologies, Inc.

Cover-glass-free array camera with individually light-shielded cameras

A cover-glass-free array camera with individually light-shielded cameras includes an image sensor array having a plurality of photosensitive pixel arrays formed in a silicon substrate, and a lens array bonded to the silicon substrate, wherein the lens array includes (a) a plurality of imaging objectives respectively registered to the photosensitive pixel arrays to form respective individual cameras therewith, and (b) a first opaque material between each of the imaging objectives to prevent crosstalk between individual cameras.. .
Omnivision Technologies, Inc.

Semiconductor device, display apparatus, manufacturing semiconductor device and manufacturing display apparatus

A semiconductor device includes an insulating substrate, a polysilicon layer, a first-gate-insulating layer, a first metal layer, an oxide-semiconductor layer, a second-gate-insulating layer, a second metal layer, a first insulating interlayer, a third metal layer, a first top gate planar type thin film transistor in which the polysilicon layer serves as a channel, and a second top gate planar self-aligned type thin film transistor in which the oxide-semiconductor layer serves as a channel. The gates of the first top gate planar type thin film transistor and the second top gate planar self-aligned type thin film transistor are made of the first and second metal layers, respectively.
Tianma Japan, Ltd.

Semiconductor device, display apparatus, manufacturing semiconductor device and manufacturing display apparatus

A semiconductor device includes an insulating substrate, a polysilicon layer on the substrate, a first-gate-insulating layer on the polysilicon layer, a first metal layer and an oxide-semiconductor layer both on the first-gate-insulating layer, a second-gate-insulating layer on the oxide-semiconductor layer, a second metal layer on the second-gate-insulating layer, a first top gate planar thin film transistor in which the polysilicon layer forms a channel with a source, drain and gate, and a second top gate thin film transistor in which the oxide-semiconductor layer forms a channel with a source, drain and gate. The source and drain of the first top gate planar thin film transistor and the gate of the second top gate thin film transistor are in the second metal layer.
Tianma Japan, Ltd.

Finfet cmos with silicon fin n-channel fet and silicon germanium fin p-channel fet

A substrate having a silicon region and a silicon germanium region is provided. A first set of fins in the silicon region and a second set of fins in the silicon germanium region is etched into the substrate.
International Business Machines Corporation

Finfet cmos with silicon fin n-channel fet and silicon germanium fin p-channel fet

An advanced finfet structure is described. A finfet device includes a set of n-type finfet devices and a set of p-type finfet devices disposed on a substrate.
International Business Machines Corporation

Semiconductor device manufacturing method

A semiconductor device manufacturing method includes stacking a second semiconductor chip on a first surface of a first semiconductor chip such that the at bump electrode overlies the position of a first through silicon via in the first semiconductor chip, stacking a third semiconductor chip on the second semiconductor chip such that a second bump electrode on the second semiconductor chip overlies the position of a second through silicon via in the third semiconductor chip to form a chip stacked body, connecting the first and second bump electrodes of the chip stacked body to the first and the second through silicon vias by reflowing the bump material, placing the chip stacked body on the first substrate such that the first surface of the first semiconductor chip faces the second surface, and sealing the second surface and the first, second, and third semiconductor chips with a filling resin.. .
Toshiba Memory Corporation

Display device including a test unit

A display device includes a pixel connected to a data line, a data pad connected to the data line, and a first test area. The first test area includes a test control line transmitting a test control signal, a test signal line transmitting a test signal, and a first switch connected to the data pad.
Samsung Display Co., Ltd.

Forming a hybrid channel nanosheet semiconductor structure

A method for fabricating a nanosheet semiconductor structure includes forming a first nanosheet field effect transistor (fet) structure having a first inner spacer comprised of a first material and a second nanosheet fet structure having second inner spacer comprised of a second material. The first material is different than the second material.
International Business Machines Corporation

Semiconductor device and manufacturing same

According to one embodiment, a semiconductor device includes a foundation layer, a stacked body, and an insulating layer. The stacked body provides on the foundation layer, the stacked body includes a plurality of electrode layers stacked with an insulator interposed.
Toshiba Memory Corporation

Method of etching silicon oxide and silicon nitride selectively against each other

Silicon oxide and silicon nitride can be etched selectively against each other with high efficiency. A method includes preparing a processing target object within a chamber; etching the silicon oxide of the processing target object by generating plasma of a processing gas containing carbon, hydrogen and fluorine within the chamber in a state that a temperature of the processing target object is set to a first temperature; and etching the silicon nitride of the processing target object by generating the plasma of the processing gas containing carbon, hydrogen and fluorine within the chamber in a state that the temperature of the processing target object is set to a second temperature higher than the first temperature..
Tokyo Electron Limited

Chemistries for tsv/mems/power device etching

Replacement chemistries for the cc4f8 passivation gas in the bosch etch process and processes for using the same are disclosed. These chemistries have the formula cxhyfz, with 1≦x<7, 1≦y≦13, and 1≦z≦13.
Air Liquide Electronics U.s. Lp

Poly directional etch by oxidation

Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon surface on a semiconductor substrate within a processing region of a semiconductor processing chamber.
Applied Materials, Inc.

Borane mediated dehydrogenation process from silane and alkylsilane species for spacer and hardmask application

Implementations described herein generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron-doped amorphous silicon layers on a semiconductor substrate. In one implementation, a method of forming a boron-doped amorphous silicon layer on a substrate is provided.
Applied Materials, Inc.

Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device

Methods are provided to form pure silicon oxide layers on silicon-germanium (sige) layers, as well as an fet device having a pure silicon oxide interfacial layer of a metal gate structure formed on a sige channel layer of the fet device. For example, a method comprises growing a first silicon oxide layer on a surface of a sige layer using a first oxynitridation process, wherein the first silicon oxide layer comprises nitrogen.
International Business Machines Corporation

Self aligned silicon carbide contact formation using protective layer

A silicon-carbide substrate that includes: a doped silicon-carbide contact region directly adjoining a main surface of the substrate, and a dielectric layer covering the main surface is provided. A protective layer is formed on the silicon-carbide substrate such that the protective layer covers the dielectric layer and exposes the doped silicon-carbide contact region at the main surface.
Infineon Technologies Ag

Sic film forming method and sic film forming apparatus

There is provided a sic film forming method for forming a sic film on a workpiece, including: a first step of forming a carbon film on the workpiece; and a second step of exposing the carbon film to a silicon-containing gas and causing silicon to be combined into the carbon film.. .
Tokyo Electron Limited

Steam oxidation initiation for high aspect ratio conformal radical oxidation

A substrate oxidation assembly includes: a chamber body defining a processing volume; a substrate support disposed in the processing volume; a plasma source coupled to the processing volume; a steam source fluidly coupled to the processing volume; and a substrate heater. A method of processing a semiconductor substrate includes: initiating conformal radical oxidation of high aspect ratio structures of the substrate comprising: heating the substrate; and exposing the substrate to steam; and conformally oxidizing the substrate.
Applied Materials, Inc.

Pentachlorodisilane

Disclosed is a silicon precursor compound for deposition, the silicon precursor compound comprising pentachlorodisilane; a composition for film forming, the composition comprising the silicon precursor compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the silicon precursor compound, and the silicon-containing film formed thereby.. .
Dow Corning Corporation

High temperature silicon oxide atomic layer deposition technology

Processes for depositing sio2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.. .
Applied Materials, Inc.

Method of treating semiconductor substrate

In a method of treating a semiconductor substrate, a plurality of active regions and a plurality of trench isolation regions are formed by selectively etching the semiconductor substrate. The semiconductor substrate is washed by providing deionized water to the semiconductor substrate.
Sk Hynix Inc.

Discharge electrode

Heretofore, silicon nitride film formed by low pressure plasma cvd has been used for an antireflection film of a solar battery. But it is difficult to reduce the production cost of a solar battery, because, in a low pressure process, facility cost and process cost are expensive.
Wacom

Methods and devices for saving and/or restoring a state of a pattern-recognition processor

Systems and methods are disclosed for saving and restoring the search state of a pattern-recognition processor. Embodiments include a pattern-recognition processor having a state variable array and a state variable storage array stored in on-chip memory (on-silicon memory with the processor).
Micron Technology Inc.

Method and system for hybrid integration of optical communication systems

Methods and systems for hybrid integration of optical communication systems are disclosed and may include receiving a continuous wave (cw) optical signal in a silicon photonics die (spd) from an optical source external to the spd. The received cw optical signal may be processed based on electrical signals received from an electronics die bonded to the spd via metal interconnects.
Luxtera, Inc.

Visible alignment markers/landmarks for cad-to-silicon backside image alignment

A mos ic includes a first standard cell including first and second power rails, first and second active regions, and a plurality of metal interconnects. The first power rail extends in a first direction and provides a first voltage to the first standard cell.
Qualcomm Incorporated

Electromigration monitor

A structure, such as a wafer, semiconductor chip, integrated circuit, or the like, includes a through silicon via (tsv) and an electromigration (em) monitor. The tsv) incldues at least one perimeter sidewall.
International Business Machines Corporation

Humidity sensor with heat module

A humidity sensor is provided, including a silicon base plate on which several intermetallic dielectric layers, each of which is provided with a metallic zone, and a metal layer are disposed, wherein the metal layer is etched to form two electrodes, each including an armature provided with a plurality of arms, wherein each armature is mounted so that the arms are interlaced to have arms positioned to face one another. The sensor also includes a temperature module or a heating module..
Em Microelectronic-marin Sa

Flexible electronics for wearable healthcare sensors

Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an insulating layer on a silicon substrate.
International Business Machines Corporation

Wooden projectile

The disclosure herein provides for a wooden projectile to be used in firearm that is comprised of wood; and in some embodiments combined with other materials. Further disclosed is a method of manufacturing the wooden projectiles with a silicon substrate..

Body cleaner for closestool

Disclosed is a body cleaner for a closestool, comprising water spray devices having a body cleaning function, fixing devices for fixing the water spray devices, and silicone hoses for providing a water flow, wherein water inlet ends of the silicone hoses are connected to a tap water pipe, and water outlet ends thereof are connected to the water spray devices; the fixing devices are arranged on the rear end of an opening of the closestool and fixed on the inner wall of the opening of the closestool; the height of the water outlet ends of the silicone hoses in the vertical direction can be adjusted; and the water spraying devices are provided with at least one nozzle which inclines upwards to form a 45-degree angle, and the nozzle is properly aligned with the front upper end of the opening of the closestool.. .

High strength special steel

Disclosed herein is a high strength special steel including, by weight %: carbon (c): from about 0.1 to 0.5%; silicon (si): from about 0.1 to 2.3%; manganese (mn): from about 0.3 to 1.5%; chromium (cr): from about 1.1 to 4.0%; molybdenum (mo): from about 0.3 to 1.5%; nickel (ni): from about 0.1 to 4.0%; vanadium (v): from about 0.01 to 0.50%; boron (b): from about 0.001 to 0.010%; niobium (nb): from about 0.05 to 0.50%; and the balance of iron (fe) and inevitable impurities.. .
Hyundai Motor Company

Case-hardenable stainless steel alloy

A steel alloy for a bearing, the alloy having a composition having from 0.04 to 0.1 wt. % carbon, from 10.5 to 13 wt.
Skf Aerospace France S.a.s

Chemical heat storage material, and composition for forming chemical heat storage material

The purpose of the present invention is to provide: a chemical heat storage material which may be molded into an article having high strength and high heat conductivity; and a composition for forming a chemical heat storage material, whereby it becomes possible to mold the chemical heat storage material in a desired shape. A chemical heat storage material comprising a group-2 element compound, a boron compound and a silicone polymer; and a composition for forming a chemical heat storage material, said composition comprising a group-2 element compound, a boron-containing compound, at least one component selected from the group consisting of an alkoxysilane, a hydrolysate of the alkoxysilane and a condensation product of the alkoxysilane, and a resin..
Nippon Paint Holdings Co., Ltd.

Waterborne copolymer dispersions with improved wet scrub resistance

An aqueous copolymer dispersion comprises at least one copolymer formed from a mixture comprising one or more main monomers selected from the group consisting of one or more vinyl esters of c1-c18 alkanoic acids, vinyl esters of aromatic acids, olefins, dienes, esters of ethylenically unsaturated carboxylic acids, vinylaromatics, and vinylhalogenides; from 0.05 to 5% by weight of one or more ethylenically unsaturated polycarboxylic acids or anhydrides thereof; from 0.05 to 10% by weight of one or more ethylenically unsaturated epoxy-containing compounds; and from 0.05 to 5% by weight of one or more hydrolyzable silicon compounds; wherein all percents are % by weight based on the total weight of the main monomers in the mixture.. .
Celanese International Corporation

Method for producing anti-blocking hard coat film

Embodiments of the invention provide a hard coat film, including a film base material and a hard coat arranged on at least one surface of the film base material, wherein the hard coat is comprised of an active energy ray-curable resin composition. The active energy ray-curable resin composition includes 100 parts by mass of (p) a urethane (meth)acrylate compound, 0.02 to 5 parts by mass of (q) organic fine particles having an average particle size of 10 to 300 nm, and 0.0002 to 2 parts by mass of (r) an acrylic silicon leveling agent.
Riken Technos Corporation

Temperature-resistant silicone resins

The r1, r2, and r3 are each independently selected from a group consisting of h, alkyl, alkenyl, alkynyl, and aryl; n ranges from 1 to 10; m ranges from 1 to 200; and p ranges from 2 to 1,000. The elastomeric materials prepared from modified silicone resins display robust mechanical properties following prolonged exposure to high temperatures (e.g., 316° c.

Compositions useful in preparing plastics and paints

Compositions of matter that are useful in the preparation of plastics and paints. These compositions contain a large number of silanol groups bonded to the silicon atoms that provide water solubility and/or disperseability of such materials in aqueous solutions.

A sulphur containing additive for making bitumen paving mixtures

The present disclosure relates to a sulphur containing additive for bitumen paving mixtures. The sulphur containing additive comprises sulphur, a mixture of metal oxides, and optionally 5 at least one metal sulphate.
Reliance Industries Limited

Silicon carbide member for plasma processing apparatus, and production method therefor

A silicon carbide member for a plasma processing apparatus is obtained by mixing an α-silicon carbide powder having an average particle size of 0.3 to 3 μm, with an amount of metal impurities in the α-silicon carbide powder reduced to 20 ppm or less, and a sintering aid comprising b4c in amount of 0.5 to 5 weight parts or al2o3 and y2o3 in total amount of 3 to 15 weight parts; sintering a mixture of the α-silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body. The resulting silicon carbide member for a plasma processing apparatus is low cost and durable..
Hokuriku Seikei Industrial Co., Ltd.

Building materials from an aqueous solution

A method of making building materials includes precipitating calcium salts from an aqueous solution by increasing a ph of the aqueous solution, and mixing the calcium salts with a first material including silicon to form a mixture. The mixture is then heated to form cement clinker..
X Development Llc

Fireproof board and manufacturing the same

A fireproof board and a method of manufacturing the fireproof board are provided. The fireproof board may include a first aggregate using a shell containing lime, a second aggregate containing silicon, and a binder to bind the first aggregate and the second aggregate.
Doenc Co., Ltd.

Operation of fluidized bed reactors by optimizing temperature gradients via particle size distribution control

A method of improving the operation of polysilicon fluidized bed reactors is disclosed. The present disclosure is directed to the optimization of axial temperature gradients in gas-solid fluidized bed systems.
Corner Star Limited

Method for solubilizing crosslinked eva, and recovering resource from used solar cell by employing solubilization method

There is provided a method for solubilizing cross-linked eva which can dissolve cross-linked eva within a short time such as about 60 minutes. Further, an object of the present invention is to provide a recovering method which uses such a solubilization method to solubilize, within a short time, the cross-linked eva of a solar battery module containing metal and silicon and recovers valuable resources such as metal and silicon, and the recovering method includes treating the cross-linked eva with a treatment solution at a temperature within a range from 100 to 300° c.
National Institute Of Advanced Industrial Science And Technology

Method for producing porous silicone sheet, frozen body, and porous silicone sheet rolled-body

The present invention provides a method for producing a porous silicone sheet comprising a freezing step of freezing a wet gel of a porous silicone body having communicating pores and a three-dimensional network silicone skeleton which forms the pores and which is formed by a copolymerization of a bifunctional alkoxysilane and a trifunctional alkoxysilane, to obtain a frozen body, a sheet forming step of forming the frozen body into a sheet to obtain a porous silicone sheet, and a cleaning step of cleaning the porous silicone sheet. According to the method of the present invention, a porous silicone body from which impurities have been sufficiently removed can be produced.
Nitto Denko Corporation

Use of an elastic polymer for production of a porous body in an additive manufacturing method

It is a feature of a use of an elastic polymer for production of a porous body (in an additive manufacturing method that the porous body comprises a three-dimensional network of node points joined to one another by struts, and a void volume present between the struts, where the struts have an average length of ≧200 μm to ≦50 mm and the struts (100) have an average thickness of ≧100 μm to ≦5 mm. The polymer here is an elastomer selected from the following group: thermoset polyurethane elastomers (pur), thermoplastic copolyamides (tpa), thermoplastic copolyesters (tpc), thermoplastic olefin-based elastomers (tpo), styrene block copolymers (tps), thermoplastic urethane-based elastomers (tpu), crosslinked thermoplastic olefin-based elastomers (tpv), thermoplastic polyvinyl chloride-based elastomers (pvc), thermoplastic silicone-based elastomers and a combination of at least two of these elastomers..
Covestro Deutschland Ag

Eartip, mold device for manufacturing the eartip, and manufacturing the eartip

An eartip, mold device for manufacturing the eartip, and method of manufacturing the eartip are introduced, characterized by forming an upper bevel-portion with upper and lower molds of a first mold unit, placing the upper bevel-portion in an upper bevel receiving cavity of a second mold unit, forming a lower bevel-portion with a lower bevel cavity, and joining the upper and lower bevel-portions to form an eartip. The top of the lower hollow-cored guiding tube extends to form a buffer portion which connects and communicates with the upper hollow-cored guiding tube.
Rextec International Limited

Apparatus for facilitating needle siliconization with controlled positive pressure gas flow

A process and apparatus for applying a needle lubricant to a syringe. The interface forces between the needle lubricant and the syringe at the tip of the needle are balanced by optimizing the flow rate of a positively pressurized gas that is delivered to the syringe.
Sio2 Medical Products, Inc.

Pharmaceutical preparations containing highly volatile silicones

The subject of the present invention is a transdermal preparation containing pharmaceutically active ingredient, wherein the particles of the active ingredient are coated with highly volatile silicones or a mixture thereof, and these coated particles are dispersed in a gel or cream base. The volatile silicone component is hexamethyldisiloxane and/or octamethyltrisiloxane and/or decamethylpentacyclo-siloxane.
Egis Gyogyszergyar Nyilvanosan Mukodo Reszvenytarsasag

Silicon dioxide nanoparticles and the use thereof for vaccination

The invention relates to ultrasmall, monodisperse nanoparticles comprising silicon dioxide to the surface of which at least one antigen is attached. The nanoparticles can be used for the immunoprophylaxis or immunotherapy of cancer.
Merck Patent Gmbh

Polymer treatment agent

A polymer treatment agent for rehabilitating damaged hair contains a block copolymer including a hydrophilic polymer chain segment and a hydrophobic polymer chain segment that is derived from a polyamino acid. The polymer treatment agent is not limited to methods for rehabilitating damaged head hair, but also can be applied to body hair including eyelashes and eyebrows; furthermore, it can increase the physical strength of hair even when applied in a very small amount and without using a silicone component..
Nanocarrier Co., Ltd.

Compositions comprising modified polysaccharides and uses thereof

Cationic and silicon substituents are introduced into polysaccharides thereby producing modified polysaccharides cationically substituted by quaternary ammonium groups and having a charge density of about 0.1 to about 2.5 meq/g, and further substituted by siliconate groups such that the modified polysaccharide has a silicon content of about 300 to about 5000 ppm. The modified polysaccharides have application in industrial, home care and personal care surface modifying formulations..
Corn Products Development, Inc.

Modified polysaccharides

Cationic and silicon substituents are introduced into polysaccharides thereby producing modified polysaccharides cationically substituted by quaternary ammonium groups and having a charge density of about 0.1 to about 2.5 meq/g, and further substituted by siliconate groups such that the modified polysaccharide has a silicon content of about 300 to about 5000 ppm. The modified polysaccharides have application in industrial, home care and personal care surface modifying formulations..
Corn Products Development, Inc.

Intraocular prosthesis

Intraocular apparatus is provided, having an anterior side and a posterior side, and configured for use with an extraocular imaging device. The intraocular apparatus includes a photovoltaic energy receiver, or an rf energy receiver, on the anterior side which receives energy from outside the eye to power the intraocular apparatus.
Rainbow Medical Ltd.

Sealed distal end prosthesis insertion bag

An apparatus and method for inserting prosthesis implants into a patient pocket. The apparatus has multiple openings including a prosthesis opening, a proximal opening, and a small opening to receive a lubricating fluid.

Aluminum plate-coated multifunctional hair straightener

Disclosed is fabric taped aluminum plates multifunctional hair straightener, relating to hairdressing apparatus field. Lower battens are clamped on two sides of lower aluminum plate with lower fabric on surface and lower aluminum plate stopper at one end, lower cover plate and lower cover plate stopper fixedly connected with other side of lower body via several first screws are installed on other side of lower body, one end of the lower cover plate is clamped with that of the lower cover plate stopper; upper clamping spring, upper elastic sheet, upper silicone pad, fuse, second mch, second manganese steel sheet and upper aluminum plate are installed inside one side of upper body; upper battens are clamped on two sides of the upper aluminum plate with upper fabric on surface.
Shenzhen Lady Merry Technology Co., Ltd.

Aluminum tube-coated novel hair curler

Disclosed is fabric taped aluminum tubes novel hair curler, relating to hairdressing apparatus field. Two ends of upper aluminum tube and lower aluminum tube are clamped onto connector and front stopper support; upper elastic sheet, upper iron sheet and first mch are arranged inside upper aluminum tube with upper fabric outside; clamping sheet, with one end fixedly connected with lower other side of handle key via screws, is arranged on outer surface of upper fabric; fuse, silicon gel stopper, lower elastic sheet, lower iron sheet and second mch are arranged inside lower aluminum tube with lower fabric outside; front stopper is fixedly connected with one end of front stopper support via screws.
Shenzhen Lady Merry Technology Co., Ltd.

Power source for an aerosol delivery device

An aerosol delivery device is provided that comprises a housing defining a reservoir configured to retain aerosol precursor composition. Contained within the housing, the aerosol delivery device also comprises a heating element controllable to activate and vaporize components of the aerosol precursor composition, and a power source configured to power the heating element to activate and vaporize components of the aerosol precursor composition.
Rai Strategic Holdings, Inc.

. .

Solid-state image sensor, manufacturing the same, and camera

A solid-state image sensor is provided. The solid-state image sensor comprises a pixel region including a photoelectric conversion unit formed in a substrate.
Canon Kabushiki Kaisha

Method and system for a photonic interposer

Methods and systems for a photonic interposer are disclosed and may include receiving one or more continuous wave (cw) optical signals in a silicon photonic interposer from an external optical source, from an optical source assembly via optical fibers coupled to the silicon photonic interposer. A modulated optical signal may be generated by processing the received cw optical signals based on a first electrical signal received from the electronics die.
Luxtera, Inc.

Scalable 2.5d interface architecture

Systems and methods for interface block. The interface block includes input/output modules distributed along the interface block and a mid-stack module interspersed within the input/output modules.
Altera Corporation

Mems resonator with a high quality factor

A symmetrical mems resonator is disclosed with a high quality factor. The mems resonator includes a silicon layer with a top surface and bottom surface opposite the top surface.
Murata Manufacturing Co., Ltd.

Resonant cavity strained group iii-v photodetector and led on silicon substrate and method to fabricate same

A structure includes an optoelectronic device having a group iv substrate (e.g., si); a buffer layer (e.g. Sige) disposed on the substrate and a first distributed bragg reflector (dbr) disposed on the buffer layer.
International Business Machines Corporation

Electrolyte formulations for electrochemical cells containing a silicon electrode

Additives to electrolytes that enable the formation of comparatively more robust sei films on silicon anodes. The sei films in these embodiments are seen to be more robust in part because the batteries containing these materials have higher coulombic efficiency and longer cycle life than comparable batteries without such additives..
Wildcat Discovery Technologies, Inc

Method for producing graphite powder for negative electrode materials for lithium ion secondary batteries

A method for producing a graphite powder for a negative electrode of a lithium ion secondary battery, including a process of graphitizing a mixture of a carbon raw material powder and a silicon carbide powder, wherein a 90% particle diameter in a volume-based cumulative particle size distribution by laser diffraction method, d90, is 1 to 40 μm, a silicon carbide content in a total mass of a carbon raw material and silicon carbide (mass of silicon carbide/total mass of the carbon raw material and silicon carbide) is 1 to 35 mass %, the ratio of a 50% particle diameter in a volume-based cumulative particle size distribution by laser diffraction method, d50, of the carbon raw material powder to d50 of silicon carbide powder (d50 of the carbon raw material powder/d50 of silicon carbide powder) is 0.40 to 4.0.. .
Showa Denko K.k.

Porous silicon based negative electrode active material, manufacturing the same, and rechargeable lithium battery including the same

The present invention relates to a method of preparing a porous silicon-based negative electrode active material comprising: mixing a porous silica (sio2) and an aluminum powder; oxidizing all or part of the aluminum powder as an aluminum oxide while at the same time reducing all or part of the porous silica as a porous silicon (si) by heat-treating a mixture of the porous silica with the aluminum powder, a negative electrode active material, and a rechargeable lithium battery including the same.. .
Sj Materials Co., Ltd

Anode material for secondary battery and non-aqueous electrolyte secondary battery using the same

Provided is an anode material for a secondary battery which reduces and inhibits swelling of a high-capacity silicon-containing alloy material to realize excellent charge/discharge cycle characteristics. The anode material includes alloy particles containing a transition metal which has electron conductivity, is difficult to react with lithium atoms and is at least one selected from the group of metals that belong to transition metals, and silicon, wherein the alloy particles include amorphous silicon, and silicide microcrystals formed by silicon and the transition metal, and the silicide microcrystals are scattered in amorphous silicon..
Lg Chem, Ltd.

Anode active material for secondary battery and preparation method thereof

Disclosed are an anode active material for a secondary battery an a method for preparing the same, wherein the anode active material includes: a crystalline carbon particle; silicon-based nanoparticles, which are surface-coated with a first amorphous carbon layer and embedded into the crystalline carbon particle while being dispersed on a surface of the crystalline carbon particle; and a second amorphous carbon layer enclosing a surface of the crystalline carbon particle and the silicon-based nanoparticles, so a novel metal composite-based anode active material can be provided that has excellent life characteristics and high battery capacity.. .
Gs Energy Corp.

Electroactive materials for metal-ion batteries

A process is provided for preparing a particulate material consisting of a plurality of porous particles comprising an electroactive material selected from silicon, tin, germanium, aluminium or a mixture thereof, wherein the particles are assembled from a plurality of particle fragments comprising the electroactive material wherein the fragments are obtained by the fragmentation of a porous precursor. The fragmentation step may be realized e.g.
Nexeon Limited

Volume change compensated silicon-silicon oxide-lithium composite material having nano silicon particles embedded in a silicon:silicon lithium silicate composite matrix, and cyclical ex-situ manufacturing processes

A method for producing a volume change compensated silicon: silicon oxide: lithium composite (sslc) material is disclosed. The method includes producing an initially prelithiated sslc material; delithiating the initially prelithiated material to produce a delithiated sslc material; and performing at least one iteration of a volume change compensation process involving: (a) re-prelithiating the delithiated sslc material to produce a re-prelithiated sslc material; and (b) delithiating the re-prelithiated sslc material produced in (a), wherein at least one of the following is satisfied: (i) prior to performing the at least one iteration of the volume change compensation process the initially prelithiated sslc material is essentially completely lithiated; and (ii) at least one iteration of the volume change compensation process produces a re-prelithiated sslc material that is essentially completely prelithiated.
Eocell Limited

Negative active material, negative electrode and lithium secondary battery including the same, and preparing the negative active material

Provided are a negative active material, an anode and a lithium secondary battery including the same, and a method of preparing the negative active material. The negative active material includes a silicon alloy core including silicon, iron, and manganese, and a shell including a metal oxide on the silicon alloy core, the metal oxide including one or more of titanium, zirconium, aluminum, cobalt, or lithium.
Samsung Sdi Co., Ltd.

Tunable lithium niobate resonators and filters via lithiation and delithiation

A surface acoustic wave (saw) device includes a silicon substrate, a piezoelectric substrate formed of lithium niobate, an alumina layer interposed between the silicon substrate and the piezoelectric substrate, and at least one electrode on the piezoelectric substrate.. .
Robert Bosch Gmbh

Optoelectronic device and the production of an optoelectronic device

The invention relates to an optoelectronic device (1) comprising at least one outer surface (2) containing silicone (20), chemical compounds, comprising an anchor group (3) and a head group (4), being bonded to the silicone via the anchor group, and the adhesion of the regions of the silicone (2) present on the outer surface being reduced owing to the head groups of the chemical compounds. A method for producing an optoelectronic device is also disclosed..
Osram Opto Semiconductors Gmbh

Solar cell and manufacturing same

The solar cell includes an n-type semiconductor layer and a p-type semiconductor layer on a first principal surface of a crystalline silicon substrate. The n-type semiconductor layer is provided so as to extend over a part on a p-type semiconductor layer-formed region provided with the p-type semiconductor layer, and a p-type semiconductor layer non-formed-region where the p-type semiconductor layer is not provided.
Kaneka Corporation

Jfet structure and manufacturing the same

The present disclosure provides a transistor structure, including a self-aligned source-drain structure surrounded by an insulating structure and a gate of a second conductive type separated from the source and the drain by the insulating structure. The self-aligned source-drain structure includes a source and a drain of a first conductive type, a channel between the source and the drain, and a polysilicon contact over and aligned with the channel.
Taiwan Semiconductor Manufacturing Company Ltd.

Mos devices having epitaxy regions with reduced facets

An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage.
Taiwan Semiconductor Manufacturing Company, Ltd.

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and manufacturing the same

A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nmos transistor are provided on a silicon substrate. Using the gate electrode as a mask, n-type dopants having a relatively large mass number (70 or more) such as as ions or sb ions are implanted, to form a source/drain region of the nmos transistor, whereby the gate electrode is amorphized.
Renesas Electronics Corporation

Strained cmos on strain relaxation buffer substrate

A finfet device includes a strain relaxation buffer (srb) substrate. A set of cut silicon fins is on the srb substrate.
International Business Machines Corporation

Lateral insulated-gate bipolar transistor and manufacturing method therefor

Provided is a lateral insulated-gate bipolar transistor (ligbt), comprising a substrate (10), an anode terminal and a cathode terminal on the substrate (10), and a drift region (30) and a gate (61) located between the anode terminal and the cathode terminal. The anode terminal comprises a p-type buried layer (52) on the substrate (10), an n-type buffer region (54) on the p-type buried layer (52), and a p+ collector region (56) on the surface of the n-type buffer region (54).
Csmc Technologies Fab1 Co., Ltd.

Method to build vertical pnp in a bicmos technology with improved speed

Various particular embodiments include an integrated circuit (ic) structure having: a stack region; and a silicon substrate underlying and contacting the stack region, the silicon substrate including: a silicon region including a doped subcollector region; a set of isolation regions overlying the silicon region; a base region between the set of isolation regions and below the stack region, the base region including an intrinsic base contacting the stack region, an extrinsic base contacting the intrinsic base and the stack region, and an amorphized extrinsic base contact region contacting the extrinsic base; a collector region between the set of isolation regions; an undercut collector-base region between the set of isolation regions and below the base region; and a collector contact region contacting the collector region under the intrinsic base and the collector-base region via the doped subcollector region.. .
International Business Machines Corporation

Method of forming pairs of three-gate non-volatile flash memory cells using two polysilicon deposition steps

A simplified method for forming pairs of non-volatile memory cells using two polysilicon depositions. A first polysilicon layer is formed on and insulated from the semiconductor substrate in a first polysilicon deposition process.
Silicon Storage Technology Inc.

Manufacture n type thin film transistor

The present invention provides a manufacture method of a n type thin film transistor. In the manufacture process, the chemical solution is employed to etch the channel region of the n type thin film transistor to raise a surface roughness of the low temperature polysilicon in the channel region of the n type thin film transistor, and thus to raise the surface defect density of the low temperature polysilicon in the channel region of the n type thin film transistor.
Wuhan China Star Optoelectronics Technology Co., Ltd.

Method for late differential soi thinning for improved fdsoi performance and hci optimization

Methods for selectively thinning a silicon channel area under a gate electrode and resulting devices are disclosed. Embodiments include providing a soi substrate including a si-layer; providing a first dummy-gate electrode over a first gate-oxide between first spacers over a first channel area of the si-layer and a second dummy-gate electrode over a second gate-oxide between second spacers over a second channel area of the si-layer; forming a s/d region adjacent each spacer; forming an oxide over the s/d regions and the spacers; removing the dummy-gate electrodes creating first and second cavities between respective first and second spacers; forming a mask with an opening over the first cavity; removing the first gate-oxide; thinning the si-layer under the first cavity, forming a recess in the si-layer; forming a third gate-oxide on recess side and bottom surfaces; and filling the recess and the cavities with metal, forming first and second rmg electrodes..
Globalfoundries Inc.

Nucleation layer for growth of iii-nitride structures

Nucleation layers for growth of iii-nitride structures, and methods for growing the nucleation layers, are described herein. A semiconductor can include a silicon substrate and a nucleation layer over the silicon substrate.
Iqe, Plc

Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling

Methods of forming a semiconductor structure include the use of channeled implants into silicon carbide crystals. Some methods include providing a silicon carbide layer having a crystallographic axis, heating the silicon carbide layer to a temperature of about 300° c.
Cree, Inc.

Sic structure, semiconductor device having sic structure, and process of forming the same

A silicon carbide (sic) structure and a method of forming the sic structure are disclosed. The sic structure includes an sic substrate and a film provided on the sic substrate.
Tohoku University

Tensile contact etch stop layer (cesl) for radio frequency (rf) silicon-on-insulator (soi) switch technology

A radio frequency switch includes a plurality of n-channel soi cmos transistors connected in series, wherein each of these transistors has a gate width of at least about 0.13 microns. A contact etch stop layer (cesl) structure having a relatively large thickness of at least about 1000 angstroms is formed on silicide regions of the n-channel soi cmos transistors, wherein the cesl structure places a tensile stress on channel regions of the n-channel soi cmos transistors, thereby reducing the on-resistances of the n-channel soi cmos transistors.
Newport Fab, Llc Dba Jazz Semiconductor, Inc.

Manufacture ltps array substrate

The present invention provides a manufacture method of a ltps array substrate. By utilizing one halftone mask, the n type heavy doping, the channel doping of the first polysilicon layer of the nmos region and the p type heavy doping of the second polysilicon layer of the pmos region, the three processes which previously require three masks are integrated into one mask process, and two exposure processes are eliminated, which significantly raises the exposure capacity, and meanwhile saves the manufacture cost of two masks to effectively reduce the manufacture cost of the ltps array substrate, and the manufactured ltps array substrate possesses great electrical property..
Wuhan China Star Optoelectronics Technology Co., Ltd.

Tft array substrate structure and manufacturing method thereof

The present invention provides a tft array substrate structure and a manufacturing method thereof, in which an interlayer dielectric layer (3) having a three-layer structure comprising a lower silicon nitride layer (31), a silicon oxide layer (32), and an upper silicon nitride layer (33) is used, wherein the lower silicon nitride layer (31) contains hydrogen for supplying hydrogen ions for hydrogenation operations and the upper silicon nitride layer (33) improves an isolation and protection capability of the interlayer dielectric layer (3) against impurity ions, so as to, when compared to the prior art that involves an intermediate dielectric layer having a dual-layer structure comprising only a silicon oxide layer and a silicon nitride layer, improve the isolation and protection capability of the interlayer dielectric layer against impurity ions, without affecting an effect of hydrogenation, and eliminating potential risk of contamination by impurity ions, shortening hydrogenation time, and increasing throughput.. .
Wuhan China Star Optoelectronics Technology Co., Ltd.

Strained cmos on strain relaxation buffer substrate

A method for constructing an advanced finfet structure is described. A first long silicon fin for n-type finfet devices and a first long silicon germanium fin for p-type finfet devices are provided on a strain relaxation buffer (srb) substrate.
International Business Machines Corporation

Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation

A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer.
International Business Machines Corporation

Deposition silicon oxide thin film and manufacture low temperature poly-silicon tft substrate

The present invention provides a deposition method of a silicon oxide thin film and a manufacture method of a low temperature poly-silicon tft substrate. The present invention provides a deposition method of a silicon oxide thin film.
Wuhan China Star Optoelectronics Technology Co. Lt

Photoresist polymers, photoresist compositions, methods of forming patterns and methods of manufacturing semiconductor devices

A photoresist polymer includes a first repeating unit and a second repeating unit. The first repeating unit includes a fluorine leaving group that is configured to be removed by a photo-chemical reaction.

Silicon nitride fill for pc gap regions to increase cell density

A semiconductor device is provided comprising a substrate, two or more semiconductor fins, and one or more gates. A flowable oxide layer is deposited on the semiconductor device.
International Business Machines Corporation

Electro-static discharge protection devices having a low trigger voltage

An electro-static discharge (esd) protection device includes a first pn diode, a second pn diode and a silicon controlled rectifier (scr). The first pn diode and the second pn diode are coupled in series between a pad and a ground voltage to provide a first discharge current path.
Sk Hynix Inc.

Method for bonding and interconnecting integrated circuit devices

A method for bonding and interconnecting two or more ic devices arranged on substrates such as silicon wafers is disclosed. In one aspect, the wafers are bonded by a direct bonding technique to form a wafer assembly, and the multiple ic devices are provided with metal contact structures.
Imec Vzw

Copper interconnect for improving radio frequency (rf) silicon-on-insulator (soi) switch field effect transistor (fet) stacks

A radio frequency (rf) switch includes a plurality of silicon-on-insulator (soi) cmos transistors. A first metal layer (m1) includes traces that connect the soi cmos transistors in series to form the rf switch.
Newport Fab, Llc Dba Jazz Semiconductor, Inc.

Power module

A power module will be provided which can suppress insulation performance deterioration caused by heat cycle to ensure insulation performance, by suppressing generation of bubbles and occurrence of detachments between silicone gel and an insulating substrate at a high or low temperature or at a high working voltage. The power module includes: an insulating substrate 2 on a first face of which a semiconductor element 3 is provided; a base plate 1 joined to a second face of the insulating substrate 2; a case member 6 surrounding the insulating substrate 2 and being in contact with a face of the base plate 1, that is joined to the insulating place2; sealing resin 8 filling a region surrounded by the base plate 1 and the case member 6 to seal the insulating substrate 2; a pressing plate 9 disposed in close contact with a surface of the sealing resin 8 in a side of the first face of the insulating substrate 2; and a lid member 7 facing an opposite face of the pressing plate 9 with respect to a face thereof in close contact with the sealing resin 8, and being fixed to the case member 6 at a position to prevent the pressing plate 9 from ascending..
Mitsubishi Electric Corporation

Backside contact to a final substrate

A device structure with a backside contact includes a silicon-on-insulator substrate including a device layer, a buried insulator layer, and an electrically-conducting connection in a trench. A final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate..
International Business Machines Corporation

Backside contact to a final substrate

A method for fabricating a backside contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. The method includes forming a first switch and a second switch in the device layer.
International Business Machines Corporation

Electrostatic chuck device

Provided is an electrostatic chuck device which includes: an electrostatic chuck section having one main surface serving as a placing surface on which a plate-shaped sample is placed, and having a built-in internal electrode for electrostatic attraction; a first adhesion layer which contains spacers and a silicone adhesive and in which a layer thickness d is in a range of 3 to 25 μm and a ratio (φs/d) between the layer thickness d and an average particle diameter φs of the spacers is in a range of 0.1 to 1.0; a plurality of heating members bonded to the surface on the side opposite to the placing surface of the electrostatic chuck section in a pattern having a gap with respect to one another by the first adhesion layer; a second adhesion layer which contains a silicone adhesive; and a base section having a function of cooling the electrostatic chuck section.. .
Sumitomo Osaka Cement Co., Ltd.

Etching method

A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride includes a first step of exposing a target object having the first region and the second region to a plasma of a processing gas containing a fluorocarbon gas, etching the first region, and forming a deposit containing fluorocarbon on the first region and the second region. The method further includes a second step of etching the first region by a radical of the fluorocarbon contained in the deposit.
Tokyo Electron Limited

Plasma processing method and plasma processing apparatus

The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing.
Hitachi High-technologies Corporation

Method of manufacturing semiconductor device

To achieve the above, poly-silicon films are formed inside a trench in a main surface of a semiconductor substrate and over the semiconductor substrate. Further, phosphorus is thermally diffused into each poly-silicon film from a phosphorous film over an upper surface of the poly-silicon film.

Substrate bonding apparatus and substrate bonding method

A substrate bonding apparatus includes a vacuum chamber, a surface activation part for activating respective bonding surfaces of a first substrate and a second substrate, and stage moving mechanisms for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates. In order to activate the bonding surfaces in the vacuum chamber, the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles.
Bondtech Co., Ltd.

Method and heat-treating high dielectric constant film

A substrate in which a high-dielectric-constant gate insulator is formed on a silicon substrate with an interface layer film sandwiched in between is housed in a chamber. The method of the invention including: (a) housing the substrate in a chamber; (b) supplying ammonia to the chamber to foam an ammonia atmosphere; and (c) applying flash light to a surface of the substrate housed in the chamber to heat the high dielectric constant film, wherein the flash light applied in said step (c) has a spectral distribution that has a peak in a wavelength range of 200 to 300 nm..
Screen Holdings Co., Ltd.

Deposition of sin

Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ald), such as plasma enhanced ald.
Asm Ip Holding B.v.

Electronic component

A ceramic electronic component including a ceramic element assembly, an external electrode, and an underlying layer. In this ceramic electronic component, the underlying layer is formed on the ceramic element assembly, the external electrode is formed on the underlying layer, the underlying layer is formed of a metal material and a glass material containing a silicon atom, and the metal material exists in a highly dispersed state in the glass material..
Murata Manufacturing Co., Ltd.

Flat winding / equal coupling common mode inductor apparatus and use thereof

The invention comprises an inductor, such as used in processing transmission of a 3-phase power system. The inductor comprises a flat/rectangular winding with a narrow edge of the flat winding wound around a core, where the width of the winding exceeds three times the height of the inductor facing edge of the winding.
Ctm Magnetics, Inc.

Display with light-emitting diodes

A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply.
Apple Inc.

Single-chip control module for an integrated system-on-a-chip for silicon photonics

The present invention provides an integrated system-on-chip device. The device is configured on a single silicon substrate member.
Inphi Corporation

Balanced mach-zehnder modulator

An apparatus for modulating a beam of light with balanced push-pull mechanism. The apparatus includes a first waveguide comprising a first pn junction on a substrate and a second waveguide comprising a second pn junction on the silicon-on-insulator substrate.
Inphi Corporation

Fabrication of electrochromic devices

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited.
View, Inc.

Manufacture low temperature poly-silicon array substrate

The present invention provides a manufacture method of a low temperature poly-silicon array substrate. A halftone mask is utilized to realize the pattern process to the polysilicon layer and the n type heavy doping process of the polysilicon section of the nmos region.
Wuhan China Star Optoelectronics Technology Co., Ltd.

Optical waveguide circuit and fabricating same

Provided is an optical waveguide circuit avoiding the difficulty of the property compensation based on temperature control, compensated with respect to the property variations due to fabrication error, particularly paid attention in a silicon waveguide, and being low in power consumption and high in performances. The optical waveguide circuit includes a silicon (si) substrate, a buried oxide film (box) layer formed on the si substrate, and an soi (silicon on insulator) layer, formed on the box layer, including an optical element utilizing the soi layer as a main optical transmission medium.
Photonics Electronics Technology Research Association

Optical coupler

A semiconductor photonic device includes a substrate, facet(s), and optical coupler(s) associated with the facet(s). Each optical coupler can couple an electromagnetic field incident on the respective facet towards the substrate as the electromagnetic field proceeds into the semiconductor photonic device.

Structured antireflection optical surface having a long lifetime and its manufacturing method

An antireflection optical surface, exhibiting absorption in the domain of the visible and of the near infrared, comprises a substrate made of a material based on silicon carbide sic and a set of texturing microstructures carpeting an exposure face of the substrate. Each microstructure is formed by a single protuberance produced on and integral with the substrate.
Commissariat A L'energie Atomique Et Aux Energies Alternatives

Flexible and stretchable sensors formed by patterned spalling

A material removal process referred to as spalling is used to provide flexible and stretchable sensors that can be used for healthcare monitoring, bio-medical devices, wearable electronic devices, artificial skin, large area sensing, etc. The flexible and stretchable sensors of the present application have high sensitivity that is comparable to that of a bulk silicon sensor.
International Business Machines Corporation

Silicon article inspection systems and methods

A method of inspecting a silicon article includes irradiating a silicon article with infrared radiation, transmitting a portion of the infrared radiation through the silicon article, and filtering the infrared radiation transmitted through the silicon article. Image data is acquired from the filtered infrared radiation and an image of the silicon article reconstructed from the image data.
Sensors Unlimited, Inc.

Infrared radiation emission surface having a high thermal emissivity and a long life time and its manufacturing method

An infrared ir radiation emission surface in a predetermined wavelength range comprises a substrate made of a material based on silicon carbide sic, and an ensemble of texturing microstructures covering the exposed emission face of the substrate. Each microstructure is formed by a single protuberance, which is arranged on and integrally with the substrate.
Commissariat A L'energie Atomique Et Aux Energies Alternatives

Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingot

The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an sic single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown sic single crystal and thereby produce an sic single-crystal ingot with a small threading screw dislocation density from the initial stage of growth. The present invention is a method for producing a silicon carbide single-crystal ingot growing a silicon carbide single crystal on a growth face of a seed crystal consisting of a silicon carbide single crystal by a physical vapor transport method so as to produce a silicon carbide single-crystal ingot, the method for producing a silicon carbide single-crystal ingot comprising forming step bunching with heights of steps of 10 μm to 1 mm and spans of terraces of 200 μm to 1 mm on the growth face of the seed crystal and making the silicon carbide single crystal grow on the growth face of the seed crystal by the physical vapor transport method..
Nippon Steel & Sumitomo Metal Corporation

High purity polymer derived 3c sic, methods compositions and applications

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (sioc) and silicon carbide (sic) materials having 3-nines, 4-nines, 6-nines and greater purity.
Melior Innovations, Inc.

Apparatus for manufacturing silicon single crystal and melt inlet pipe of the same

An apparatus for manufacturing a silicon single crystal is provided. The apparatus comprises a chamber (11), a quarts crucible (21) provided in the chamber so as to be rotatable and movable upward and downward and store a silicon melt, a first heater (25) for melting a silicon raw material stored in the crucible, and a pulling mechanism (32) provided in the chamber so as to be rotatable and movable upward and downward.
Sumco Corporation

A nickel-based alloy

A nickel-based alloy composition consisting, in weight percent, of: between 7.0 and 1.0% chromium, between 4.0 and 14.0% cobalt, between 1.0 and 2.0% rhenium, between 0.5 and 11.0% tungsten, between 0.0 and 0.5% molybdenum, between 4.0 and 6.5% aluminium, between 8.0 and 12.0 tantalum, between 0.0 and up to 0.5% hafnium, between 0.0 and 0.5% niobium, between 0.0 and 0.5% titanium, between 0.0 and 0.5% vanadium, between 0.0 and 0.1% silicon, between 0.0 and 0.1% yttrium, between 0.0 and 0.1% lanthanum, between 0.0 and 0.1% cerium, between 0.0 and 0.003% sulphur, between 0.0 and 0.05% manganese, between 0.0 and 0.05% zirconium, between 0.0 and 0.005% boron, between 0.0 and 0.01% carbon, the balance being nickel and incidental impurities.. .
Oxford University Innovation Limited

Cobalt silicide-containing copper alloy

The present invention discloses copper alloy containing cobalt and silicon, which comprises (in percentage of weight): 69% to 92% of copper; 6.5% to 30.5% of zinc; 0.01% to 3% of cobalt; and 0.01% to 0.5% of silicon; wherein the total content of copper and zinc is greater than 95%, and the content of inevitable impurities is less than 0.2%. Preferably, the copper alloy comprises matrix phases of copper-zinc α solid solution and coxsiy precipitated phases; the coxsiy precipitated phases are dispersedly distributed on a matrix phase; the percentage of the matrix phases by area is greater than or equal to 95%; and, the percentage of the coxsiy precipitated phases by area is 0.01% to 5%..
Ningbo Powerway Alloy Material Co., Ltd.