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Silicon-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Halogen-free and phosphorus-free silicone resin composition, prepreg, laminate board, copper-clad plate using the same, and ...
Shengyi Technology Co., Ltd.
December 07, 2017 - N°20170354032

Provided are a halogen-free phosphorus-free silicon resin composition, and prepreg and laminated board using the same, and printed circuit board, the silicon resin composition comprising the following components in parts by solid weight: 50-90 parts of an organic silicon resin, 20-80 parts of a vinyl-terminated silicon oil, 0. 1-5 parts of a viscosity enhancing agent, 0-60 parts of a filler, 0. 0001-0. 5 ...
Temperature-insensitive optical transceiver
Oracle International Corporation
December 07, 2017 - N°20170353262

A transceiver separates wavelength-division-multiplexing (wdm) components into two groups, one of which is more sensitive to temperature than the other group. The temperature-sensitive group of optical components is implemented on a first substrate in the transceiver that has a lower thermo-optic coefficient than a second substrate in the transceiver, which contains the group of optical components that is less temperature ...
Secondary battery
Nec Corporation
December 07, 2017 - N°20170352908

An object of the present invention is to provide a secondary battery having high energy density with long-term life. The present invention relates to a secondary battery comprising a negative electrode comprising a silicon-containing compound and an electrolyte solution comprising a fluorine-containing ether compound, a fluorine-containing phosphoric acid ester, a sulfone compound and a cyclic carbonate compound in a predetermined ...
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Negative electrode active material for electric device and electric device using the same
Nissan Motor Co., Ltd.
December 07, 2017 - N°20170352882

A negative electrode active material for electric device is used which includes a silicon-containing alloy having a structure in which a silicide phase containing a silicide of a transition metal is dispersed in a parent phase containing amorphous or low crystalline silicon as a main component and a predetermined composition and in which a ratio value (b/a) of a ...
Negative-electrode active material for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery
Sanyo Electric Co., Ltd.
December 07, 2017 - N°20170352881

A non-aqueous electrolyte secondary battery containing a silicon material, wherein the negative-electrode active material can constitute a non-aqueous electrolyte secondary battery having high charge capacity, high initial charge/discharge efficiency, and good cycle characteristics. A negative-electrode active material particle according to an embodiment includes a lithium silicate phase represented by li2zsio(2+z) {0<z<2} and particles ...
Silicon-carbon composite material containing carbon material comprising layers
Panasonic Intellectual Property Management Co., Ltd.
December 07, 2017 - N°20170352878

A silicon—carbon composite material contains: a carbon material comprising layers; and silicon particles supported between the layers of the carbon material. The specific surface area of the silicon—carbon composite material is 200 m2/g or more as determined by the bet method using nitrogen gas adsorption.
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Silicon Patent Applications
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  • 4172+ full patent PDF documents of Silicon-related inventions.
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  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Negative electrode active material for nonaqueous electrolyte secondary batteries
Mitsui Mining & Smelting Co., Ltd.
December 07, 2017 - N°20170352872

Provided is a novel method of preparing a negative electrode for nonaqueous electrolyte secondary batteries, which contains silicon and is capable of improving cycle characteristics and is also capable of suppressing aggregation of active material particles in a slurry. After formation of a molten liquid by any one of methods (i) to described in the specification, the molten liquid is ...
Composition for organic electronic device encapsulant and encapsulant formed using the same
Momentive Performance Materials Korea Co., Ltd.
December 07, 2017 - N°20170352836

The present application relates to a composition for an encapsulant and an encapsulant formed using the same. The composition for an encapsulant according to one embodiment of the present application includes 1) a silicone resin; 2) one or more types of moisture absorbents; and 3) one or more types of photoinitiators.
Method for manufacturing substrate for solar cell and substrate for solar cell
Shin-etsu Chemical Co., Ltd.
December 07, 2017 - N°20170352774

The present invention is a method for manufacturing a substrate for a solar cell composed of a single crystal silicon, including the steps of: producing a silicon single crystal ingot; slicing a silicon substrate from the silicon single crystal ingot; and subjecting the silicon substrate to low temperature thermal treatment at a temperature of 800° c. Or more and less ...
Semiconductor device
Samsung Electronics Co., Ltd.
December 07, 2017 - N°20170352759

A semiconductor device may include: a semiconductor substrate, a device isolating layer embedded within the semiconductor substrate and defining an active region, a channel region formed in the active region, a gate electrode disposed above the channel region, a gate insulating layer provided between the channel region and the gate electrode, and a silicon germanium epitaxial layer adjacent to the ...
Method of manufacturing semiconductor device
Hitachi Kokusai Electric Inc.
December 07, 2017 - N°20170352745

Described is a technique for uniformly doping a silicon substrate having a fin structure with a dopant. A method of manufacturing a semiconductor device may includes: (a) forming a dopant-containing film containing a dopant on a silicon film by performing a cycle a predetermined number of times, the, cycle including: (a-1) forming a first dopant-containing film by supplying a first ...
Novel embedded shape sige for strained channel transistors
Stmicroelectronics, Inc.
December 07, 2017 - N°20170352741

An integrated circuit die includes a silicon substrate. Pmos and nmos transistors are formed on the silicon substrate. The carrier mobilities of the pmos and nmos transistors are increased by introducing tensile stress into the channel regions of the nmos transistors and compressive stress into the channel regions of the pmos transistors. Tensile stress is introduced by including a region ...
Contact formation on germanium-containing substrates using hydrogenated silicon
International Business Machines Corporation
December 07, 2017 - N°20170352738

A method and structure is provided in which germanium or a germanium tin alloy can be used as a channel material in either planar or non-planar architectures, with a functional gate structure formed utilizing either a gate first or gate last process. After formation of the functional gate structure, and contact openings within a middle-of-the-line (mol) dielectric material, a hydrogenated ...
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Silicon Patent Applications
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Thin poly field plate design
Taiwan Semiconductor Manufacturing Co., Ltd.
December 07, 2017 - N°20170352731

The present disclosure relates to a high voltage transistor device having a thin polysilicon film field plate, and an associated method of formation. In some embodiments, the high voltage transistor device has a gate electrode disposed between source and drain regions and separated from a substrate by a gate dielectric. A spacer is disposed along an upper surface of the ...
Semiconductor structure with a silicon germanium alloy fin and silicon germanium alloy pad structure
International Business Machines Corporation
December 07, 2017 - N°20170352729

A semiconductor structure is provided that includes a silicon germanium alloy fin having a second germanium content located on a first portion of a substrate. The structure further includes a laterally graded silicon germanium alloy material portion located on a second portion of the substrate. The laterally graded silicon germanium alloy material portion is spaced apart from the silicon germanium ...
Manufacturing method of tft backplane and tft backplane
Shenzhen China Star Optoelectronics Technology Co. Ltd.
December 07, 2017 - N°20170352711

The present invention provides a manufacture method of a tft backplate and a tft backplate. By utilizing the oxide semiconductor to manufacture the switch tft, and utilizing the advantages of rapid switch and lower leakage current of the oxide semiconductor, the switch speed of the switch tft is raised and the leakage current is lowered; by utilizing the polysilicon to ...
Method of manufacturing thin film transistor, dehydrogenating apparatus for performing the same, and organic light ...
Lg Display Co., Ltd.
December 07, 2017 - N°20170352688

Provided are a method of manufacturing a thin film transistor, a dehydrogenating apparatus for performing the method, and an organic light emitting display device including a thin film transistor manufactured by the same. A method of manufacturing a thin film transistor includes reducing a content of oxygen in a chamber for performing a dehydrogenation process of an amorphous silicon layer ...
Thermal pads between stacked semiconductor dies and associated systems and methods
Micron Technology, Inc.
December 07, 2017 - N°20170352645

Systems and methods are described for improved heat dissipation of the stacked semiconductor dies by including metallic thermal pads between the dies in the stack. In one embodiment, the thermal pads may be in direct contact with the semiconductor dies. Heat dissipation of the semiconductor die stack can be improved by a relatively high thermal conductivity of the thermal pads ...
Wafer laminate and making method
Shin-etsu Chemical Co., Ltd.
December 07, 2017 - N°20170352637

A wafer laminate has an adhesive layer (2) sandwiched between a support (1) and a wafer (3), with a circuit-forming surface of the wafer facing the adhesive layer. The adhesive layer (2) includes a light-shielding resin layer (2a), an epoxy-containing siloxane skeleton resin layer (2b), and a non-silicone thermoplastic resin layer (2c).
Integrated circuit structure having deep trench capacitor and through-silicon via and method of forming same
Globalfoundries Inc.
December 07, 2017 - N°20170352618

One aspect of the disclosure relates to an interposer. The interposer may include: a first dielectric layer extending from a substrate in a direction away from a front side of the substrate; a back-end-of-the-line (beol) region extending from the substrate in a direction away from the back side of the substrate; a deep trench (dt) capacitor within the substrate and ...
Semiconductor device and method for producing the same
Mitsubishi Electric Corporation
December 07, 2017 - N°20170352600

Provided is a semiconductor device capable of measuring a depth of removal of a silicon carbide (sic) wafer with high accuracy through simple steps, and a method for producing the semiconductor device. The semiconductor device according to an aspect of the present invention includes at least one evaluation element disposed on a sic wafer. The evaluation element includes a doped ...
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