|| List of recent Silicon-related patents
|Esd/antenna diodes for through-silicon vias|
Roughly described, an antenna diode is formed at least partially within the exclusion zone around a tsv, and is connected to the tsv by way of a metal 1 layer conductor at the same time that the tsv is connected to either the gate poly or a diffusion region of one or more transistors placed outside the exclusion zone.. .
|Concurrent host operation and device debug operation with single port extensible host interface (xhci) host controller|
An improved usb host controller and method supports concurrent host and device debug operations with only one usable usb port. The described embodiments save silicon cost and avoid additional connectors, which are undesirable in ever-smaller devices..
|System and method for hardware based security|
An asset management system is provided, which includes a hardware module operating as an asset control core. The asset control core generally includes a small hardware core embedded in a target system on chip that establishes a hardware-based point of trust on the silicon die.
|Flexible surgically implantable device, made of coated silicone, for joining phalanxes, metacarpus-phalanx or metatarsus-phalanx bones in arthroplasty surgery|
A surgically implantable device (1,10) made of a single piece of silicone, for joining phalanxes, metacarpus-phalanx or metatarsus-phalanx bones of the hand or foot in arthroplasty surgery, includes an enlarged central portion (2) formed by a thickened portion (5) having a rounded profile and provided with a canal (6) extending transversally in which a depression (7) is centrally formed, and by two elongated stem portions (3,4) which extend from the enlarged central portion (2), one opposed to the other. The device (1,10) is coated completely with at least one layer of turbostratic pyrolytic carbon less than or equal to 10 microns thick obtained by physical vapour deposition (pvd)..
|Silicon breast implant which minimizes stress concentration and method for manufacturing same|
The present invention relates to a silicon breast implant which minimizes stress concentration applied thereto after being inserted into the human body to maximize the resistance of same to fatigue-induced rupture, thereby improving the durability of the implant. The breast implant may include an elegant patch-adhesion portion having a thin thickness so as to provide superior overall feel and improve the appearance of the product.
|Method and magnetic resonance apparatus to determine at least one datum from an implanted silicone implant|
In a method and magnetic resonance apparatus to determine at least one datum of an implanted silicone implant, at least one magnetic resonance data set is acquired, with the acquired signals of the magnetic resonance data set originating at least in part from the silicone implant. At least one spectrum is calculated from the magnetic resonance data set, and the datum is determined in a processor from the spectrum..
|Hexafluorodimethylcarbinol terminated alkane- and alkenethiols|
A hexafluorodimethylcarbinol terminated compound, method of making it, and a composition of matter are disclosed. The compound may have the formula (cf3)2c(oh)-l-m-r.
|Camptothecin derivative, and preparation method thereof, and pharmaceutical composition and application|
The present invention relates to a camptothecin derivative having a structure as represented by formula (ii), in which xn+ is selected from h+, k+, na+, li+, mg2+, ca2+, zn2+, fe3+, and ammonium ion, while r1, r2, r3, and r4 independently represent a hydrogen, a hydroxyl group, a nitro group, a cyano group, a halogen, a carboxyl group, an optionally substituted amino group, a silicon-containing group, a monocyclic aryloxy group, an optionally substituted c1-c6 alkoxy group, an optionally substituted c1-c6 alkylcarbonyl group, an optionally substituted c1-c6 alkyl group, or an optionally substituted c3-c6 cycloalkyl group; alternatively, r1 and r2 are connected via one to three other atoms to form a heterocyclic ring; and in another embodiment, r3 and r4 are oxygen atoms and connected via —o—(ch2)n—o—, forming a ring, in which n=i or 2. The compound has great water-solubility, chemical stability, and great efficacy in treatment on cancer..
|Method for preparing a polyorganosiloxane|
One object of the present invention is to provide a method for preparing a polyorganosiloxane without using any catalyst having corrosivity and toxicity such as an alkaline earth metal catalyst in a condensation reaction of at least one organic silicon compound having a silanol group and/or an alkoxy silyl group. The present invention is a method for preparing a polyorganosiloxane, wherein the method includes a step of condensation reacting at least one organic silicon compound having at least one —ox group bonding to a silicon atom in the molecule, wherein x is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms or an alkoxyalkyl group having 2 to 10 carbon atoms, in the presence of a catalyst, wherein the catalyst is at least one selected from the group having hydroxides or oxides of elements in groups 3-15 of the periodic table..
|Functionalized polymer, rubber composition and pneumatic tire|
Where r1, r2 and r3 are independently c1 to c8 alkyl or c1 to c8 alkoxy, with the proviso that at least two of r1, r2 and r3 are c1 to c8 alkoxy; r4 is c1 to c8 alkanediyl, c1 to c8 arylene, c1 to c8 alkylarylene, c1 to c8 arylalkanediyl, or a covalent bond; r5 is c2 alkanediyl; si is silicon; x is sulfur or oxygen; and p is a diene based elastomer, and n is 1 or 2.. .
|Fluoroelastomer compositions having self-bonding characteristics and methods of making same|
Self-bonding curable fluoroelastomer compositions are provided wherein the compositions including a) a fluoropolymer composition having at least one curable fluoropolymer; and b) a compound selected from the group consisting of aluminum acrylates, silicon acrylates, and ammonia acrylates, wherein the self-bonding curable fluoroelastomer composition is able to bond directly to a substrate. Bonded structures formed of such self-bonding compositions and a substrate having a surface bonded thereto are also described herein along with a method for bonding a self-bonding curable fluoroelastomer composition to a substrate surface.
|Paraffinic oil-in-water emulsions for controlling infection of crop plants by fungal pathogens|
This disclosure features fungicidal combinations that include a paraffinic oil and an emulsifier. The combinations can further include one or more of the following: pigments, silicone surfactants, anti-settling agents, conventional fungicides such as demethylation inhibitors (dmi) and quinone outside inhibitors (qol) and water.
|Composite encapsulating material|
The present invention is a composite encapsulating material which consists of silicon dioxide, aluminum oxide, yttrium oxide and zinc oxide and has glass transition temperature between 694° c. And 833° c.
|Multifunctional substrate polishing and burnishing device and polishing and burnishing method thereof|
The invention, involving grinding and polishing flat processing and thinning processing of hard and brittle materials such as silicon wafer, sapphire substrate and the glass substrate, belongs to ultra-precision machining technical field and provides a multifunction substrate grinding and polishing device and method for the substrate grinding and polishing, which could be used in the grinding and polishing process of flat substrate such as ceramics, metal and composite materials. The grinding and polishing of substrate are processed in three ways: axial plunge grinding and polishing, radial plunge grinding and polishing and back grinding and polishing of wafer with outer rim.
|Method and apparatus of forming silicon nitride film|
Provided is a method of forming a silicon nitride film on an object to be processed, which includes: supplying a silicon raw material gas into a processing chamber; and supplying a nitridant gas into the processing chamber, wherein supplying the silicon raw material gas includes an initial supply stage in which the silicon raw material gas is initially supplied and a late supply stage following the initial supply stage, wherein a first internal pressure of the processing chamber defined in the initial supply stage is lower than a second internal pressure of the processing chamber defined in the late supply stage.. .
|Substrate processing apparatus and method of manufacturing semiconductor device|
A substrate processing apparatus includes a substrate processing chamber including a plasma generation space where a plasma is generated and a substrate processing space where a substrate is placed during a substrate process; an inductive coupling structure outside the plasma generation space wherein a sum of electrical lengths of a coil of the inductive coupling structure and a waveform adjustment circuit connected to the coil is an integer multiple of a wavelength of an applied power; a substrate mounting table in the substrate processing space and supporting the substrate including grooves having high aspect ratios with a silicon-containing layer disposed thereon; a substrate transfer port at a wall of the substrate processing chamber; a substrate mounting table elevator moving the substrate mounting table upward/downward; an oxygen gas supply system to supply an oxygen-containing gas into the plasma generation space; and an exhaust unit exhausting gas from the substrate processing chamber.. .
|Back contact solar cells with effective and efficient designs and corresponding patterning processes|
Laser based processes are used alone or in combination to effectively process doped domains for semiconductors and/or current harvesting structures. For example, dopants can be driven into a silicon/germanium semiconductor layer from a bare silicon/germanium surface using a laser beam.
|Epitaxy of high tensile silicon alloy for tensile strain applications|
Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature.
|Method and device for slicing a shaped silicon ingot using layer transfer|
A method for slicing a crystalline material ingot includes providing a crystalline material boule characterized by a cropped structure including a first end-face, a second end-face, and a length along an axis in a first crystallographic direction extending from the first end-face to the second end-face. The method also includes cutting the crystalline material boule substantially through a first crystallographic plane in parallel to the axis to separate the crystalline material boule into a first portion with a first surface and a second portion with a second surface.
|Methods of manufacturing a semiconductor device|
Methods of manufacturing a semiconductor device are provided. The method includes forming a poly-silicon layer doped with first p-type dopants on a substrate, etching the poly-silicon layer and the substrate to form a poly-silicon pattern and a trench, forming device isolation pattern covering a lower sidewall of the poly-silicon pattern in the trench, thermally treating the poly-silicon pattern in a gas including second p-type dopants, forming a dielectric layer and a conductive layer on the thermally treated poly-silicon pattern and the device isolation pattern, etching the conductive layer, the dielectric layer, and the thermally treated poly-silicon pattern to form a control gate, a dielectric pattern, and a floating gate respectively..
|Memory cells and methods of forming memory cells|
Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6.
|Finfet device with silicided source-drain regions and method of making same using a two step anneal|
A thermal annealing flow process includes the steps of: depositing a metal or metal alloy on a silicon semiconductor structure, performing a first annealing of a rapid thermal anneal (rta) type to produce a metal rich phase in a portion of the silicon semiconductor structure, removing unreacted metal or metal alloy and performing a second annealing as a millisecond annealing at a temperature that is below a melt temperature of the silicon material present in the silicon semiconductor structure.. .
|Self-doped ohmic contacts for compound semiconductor devices|
A compound semiconductor device is manufactured by forming an iii-nitride compound semiconductor device structure on a silicon-containing semiconductor substrate, the iii-nitride compound semiconductor device structure including a gan alloy on gan and a channel region arising near an interface between the gan alloy and the gan. One or more silicon-containing insulating layers are formed on a surface of the iii-nitride compound semiconductor device structure adjacent the gan alloy, and a contact opening is formed which extends through the one or more silicon-containing insulating layers to at least the gan alloy.
|Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same|
In an amorphous silicon thin film transistor-liquid crystal display device and a method of manufacturing the same, gate patterns including a gate line and a gate electrode are formed on an insulation substrate having a display region and a driving circuit region on which a plurality of shift resistors are formed. A gate insulating film, active layer patterns and data patterns including source/drain electrodes are formed successively on the substrate.
|Method for etching polysilicon gate|
A method for etching a polysilicon gate is disclosed, wherein the polysilicon gate includes an undoped polysilicon portion and a doped polysilicon portion that is situated on the undoped polysilicon portion. The method includes: obtaining a thickness of the undoped polysilicon portion and a thickness of the doped polysilicon portion by using an optical linewidth measurement device; and etching the undoped polysilicon portion and the doped polysilicon portion by using two respective steps with different parameters, respective etching time for the undoped polysilicon portion and the doped polysilicon portion of every wafer being adjusted in real time by using an advanced process control system.
|Silicon oxide-carbon composite and method of manufacturing the same|
Provided are a silicon oxide-carbon composite and a method of manufacturing the same. More particularly, the present invention provides a method of manufacturing a silicon oxide-carbon composite including mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, reacting the mixture of silicon and silicon dioxide in a reducing atmosphere, and coating a surface of silicon oxide manufactured by the reaction with carbon, and a silicon oxide-carbon composite manufactured thereby..
|Negative active material, method of manufacturing the same, and lithium battery including the negative active material|
In an aspect, a negative active material, a method of preparing the negative active material, and a lithium battery including the negative active material are provided. The method of preparing the negative active material may increase pulverizing efficiency in pulverizing a silicon-based bulky particle into a nano-size silicon-based primary particle and decrease a capacity loss of the obtained negative active material.
|Lithium ion secondary cell|
The negative-electrode active material for a lithium ion secondary cell of the invention includes a mixed material of silicon oxide particles composed of silicon oxide and rod-shaped iron oxide particles composed of iron oxide. It is preferable to use iron oxide particles having a plurality of pores in a surface, and an electrode reaction is effectively carried out..
|Silicon oxide for anode active material of secondary battery|
Provided is silicon oxide for an anode active material of a secondary battery. More particularly, the present invention provides silicon oxide included in an anode active material of a secondary battery, wherein a ratio of a maximum height (h2) of a peak in a 2 theta range of 40° to 60° to a maximum height (h1) of a peak in a 2 theta range of 15° to 40° in a x-ray diffraction (xrd) pattern of the silicon oxide satisfies 0.40≦h2/h1≦1.5..
|Phase separated silicon-tin composite as negative electrode material for lithium-ion and lithium sulfur batteries|
A composite of silicon and tin is prepared as a negative electrode composition with increased lithium insertion capacity and durability for use with a metal current collector in cells of a lithium-ion battery or a lithium-sulfur battery. This negative electrode material is formed such that the silicon is present as a distinct amorphous phase in a matrix phase of crystalline tin.
|Synthesis of micro-sized interconnected si-c composites|
Embodiments provide a method of producing micro-sized si—c composites or doped si—c and si alloy-c with interconnected nanoscle si and c building blocks through converting commercially available siox (0<x<2) to a silicon framework by calcination, followed by etching and then by carbon filling by thermal deposition of gas containing organic molecules that have carbon atoms.. .
|High energy density secondary lithium batteries|
A lithium ion battery includes a positive electrode comprising carbon fibers, a binder composition with conductive carbon, and a lithium rich composition. The lithium rich composition comprises at least one selected from the group consisting of li1+x(my mzii mwiii)o2 where x+y+z=1, and xli2mno3(1−x)limo2, where x=0.2-0.7, and where m, mii and miii are interchangeably manganese, nickel and cobalt, and lim2−xmxiio4 , where m and mii are manganese and nickel, respectively, with x=0.5.
|Photocurable composition and encapsulated apparatus including a barrier layer formed using the photocurable composition|
A photocurable composition, a composition for encapsulation of an organic light emitting device, an encapsulated device, and an encapsulated apparatus, the photocurable composition including a photocurable monomer; a silicon-containing monomer; and a photopolymerization initiator, wherein the silicon-containing monomer has a structure represented formula 1:. .
|Method for the plasma treatment of workpieces and workpiece with a gas barrier layer|
The method serves for the plasma treatment of container-like workpieces. The workpiece is inserted into an at least partially evacuable chamber of a treatment station.
|Anodic bonding for a mems device|
The invention relates to a device comprising a wafer comprising a silicon area and a wafer comprising a glass area fastened to each other, the fastening zone thus formed between the wafers defining a multilayer structure comprising a first layer protecting the silicon from physical changes caused by attack of the surface, which layer covers the silicon area, and a second layer protecting the glass from physical changes caused by attack of the surface, which layer covers the glass area; said multilayer structure furthermore comprising at least one additional layer enabling anodic bonding between the two protective layers; said device containing at least one fluid channel protected by said protective layers and able to contain a solution temporarily.. .
|Spark plug electrode material and spark plug and method for manufacturing the spark plug electrode material and an electrode for the spark plug|
A spark plug electrode material containing a) 0.7 to 1.3% silicon by weight, b) 0.5 to 1.0% copper by weight, and c) nickel as the balance.. .
|Hydrogen gas production system utilizing silicon wastewater and method for production of hydrogen energy using the same|
Disclosed is a method for production of hydrogen energy utilizing silicon wastewater. The method includes treating the silicon wastewater through uf membrane filtration to separate uf treated water and a concentrated silicon waste solution therefrom, admixing the separated silicon waste solution with an alkaline material, reacting the concentrated silicon waste solution with the alkaline material in the mixture to produce hydrogen gas and alkaline water, using an acidic material to neutralize the alkaline water, thereby forming a supernatant and a precipitate..
|Process for deposition of polycrystalline silicon|
The invention relates to a process for deposition of polycrystalline silicon, including introduction of a reaction gas containing a silicon-containing component and hydrogen into a reactor, as a result of which polycrystalline silicon is deposited in the form of rods, which includes passing into the reactor, after the deposition has ended, a gas which attacks silicon or silicon compounds which flows around the polycrystalline rods and an inner reactor wall in order to dissolve silicon-containing particles which are formed in the course of deposition and adhere on the inner reactor wall or on the polycrystalline silicon rods before the polycrystalline silicon rods are removed from the reactor.. .
|Process for hydrogenating silicon tetrachloride to trichlorosilane|
The invention provides a process for hydrogenating silicon tetrachloride in a reactor, in which reactant gas containing hydrogen and silicon tetrachloride is heated to a temperature of greater than 900° c. At a pressure between 4 and 15 bar, first by means of at least one heat exchanger made from graphite and then by means of at least one heating element made from sic-coated graphite, the temperature of the heating elements being between 1150° c.
|Titanium based ceramic reinforced alloy for use in medical implants|
A titanium based, ceramic reinforced alloy ingot for use in producing medical implants. An ingot is formed from an alloy having comprising from about 5 to about 35 wt.
|Cooling device for near instantaneous water heater for kitchen or bath products|
The present application relates to a near instantaneous water heater for kitchen or bath products such as a toilet bidet or bidet. The water heater includes a cold water chamber such that water entering the water heater flows through the cold water chamber before it is heated within a heating chamber.
|Optical waveguide type optical terminator|
An optical waveguide type optical terminator forms an optical waveguide structure including at least an optical absorption core (103) which is formed on a clad layer (102) and includes a portion composed of silicon in which an impurity of 1019 cm−3 or more is doped, and is used by being optically connected in series with an optical waveguide including a core (105) composed of silicon. The optical absorption core (103) is sufficient provided that, at least, an impurity of around 1019 cm−3 is doped therein.
|Miniature speaker and speaker cabinet and hearing aid|
A miniature speaker and speaker cabinet are provided, wherein the speaker is enclosed in an oblong capsule with a sound output opening at one end and leads passing from a speaker coil inside the capsule to connection points externally on the capsule, and where the cabinet encloses the capsule and at one end thereof comprise a lead input opening with leads passing there through to the connection points on the capsule, and where the cabinet further comprise a sound exit opening opposite the lead input opening, which is in fluid communication with the sound output opening of the capsule, wherein the cabinet has an internal space surpassing external measures of the capsule in all directions defining a gap between the capsule and cabinet wherein the thus defined gab is filled out with a hardening silicone.. .
|Automatic recovery of tpm keys|
A trusted platform module (tpm) is a silicon chip that constitutes a secure encryption key-pair generator and key management device. A tpm provides a hardware-based root-of-trust contingent on the generation of the first key-pair that the device creates: the srk (storage root key).
|Production method for optical component and optical component|
A method for manufacturing a light transmissive optical component, includes a first etching process of forming a depressed portion by applying etching to a silicon region of a plate-shaped member, a thermal oxidation process of forming a silicon oxide film by thermally oxidizing an inner side surface of the depressed portion, and a nitride film formation process of forming a silicon nitride film that covers the silicon oxide film. Accordingly, it is possible to realize a manufacturing method for an optical component which is capable of uniformly forming a silicon oxide film on a semi-transmissive reflecting surface which is largely inclined (or nearly vertical) with respect to a substrate surface, and an optical component produced by this method..
|Wavelength selective switch including a liquid crystal on silicon|
A wavelength selective switch (wss) apparatus is disclosed, which includes: a liquid crystal on silicon (lcos) phase array configured for selectively diverting a certain wavelength component of light beams to continue to propagate and keeping another wavelength component of the light beams from propagating by controlling a voltage applied thereto and/or a polarization of the light beams, the lcos phase array being provided with a first liquid crystal (lc) domain, a second liquid crystal (lc) domain, and a reflection component, the reflection component being configured to reflect a light beam input through the first lc domain back to the first lc domain and reflect a light beam input through the second lc domain back to the second lc domain; and a reflective element that is arranged to reflect the light beams output from the lcos phase array back to the lcos phase array.. .
|Composite soft magnetic powder, composite soft magnetic powder core, and preparation method therefor|
The present invention discloses a composite soft magnetic powder core and a preparation method therefor, which belong to the technical fields of soft magnetic materials and preparation thereof. An fe/fe3o4 shell layer is generated in situ on surfaces of iron powder particles through a controlled oxidation process, to prepare fe/fe3o4 composite soft magnetic powder having a uniform structure.
|Silicone polymers with high refractive indices and extended pot life|
Novel compositions and methods of using those compositions to form high refractive index coatings are provided. The compositions comprise a mixture of two silicone polymers, a catalyst, and an inhibitor for the catalyst.
|Selective wet etching of hafnium aluminum oxide films|
Methods and etchant compositions for wet etching to selectively remove a hafnium aluminum oxide (hfalox) material relative to silicon oxide (siox) are provided.. .
|Production process for a micromechanical component and micromechanical component|
A production process for a micromechanical component includes at least partially structuring at least one structure from at least one monocrystalline silicon layer by at least performing a crystal-orientation-dependent etching step on an upper side of the silicon layer with a given (110) surface orientation of the silicon layer. For the at least partial structuring of the at least one structure, at least one crystal-orientation-independent etching step is additionally performed on the upper side of the silicon layer with the given (110) surface orientation of the silicon layer..
|Silicon wafer and method for producing the same|
The present invention provides a method for producing a silicon wafer from a defect-free silicon single crystal grown by a cz method, the method comprising: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° c. Or higher but 600° c.
|Antifuse device for integrated circuit|
The present disclosure relates to an antifuse for preventing a flow of electrical current in an integrated circuit. One such antifuse includes a reactive material and a silicon region thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state.
|Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus|
A solid-state imaging device with a pixel region in which a plurality of pixels with photoelectric conversion films are arrayed and pixel isolation portions are interposed between the plurality of pixels. The photoelectric conversion film is a chalcopyrite-structure compound semiconductor composed of a copper-aluminum-gallium-indium-sulfur-selenium based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium based mixed crystal, and is disposed on a silicon substrate in such a way as to lattice-match the silicon substrate concerned.
|Micro-electromechanical pressure sensor having reduced thermally-induced stress|
Thermally-induced stress on a silicon micro-electromechanical pressure transducer (mems sensor) is reduced by attaching the mems sensor to a plastic filled with low cte fillers that lowers the plastic's coefficient of thermal expansion (cte) to be closer to that of silicon. The mems sensor is attached to the housing using an epoxy adhesive/silica filler mixture, which when cured has a cte between about ten ppm/° c.
|Sensor device, motion sensor, and electronic device|
A sensor device includes a first electrode disposed on active surface side of a silicon substrate, an external connecting terminal electrically connected to the first electrode, at least one stress relaxation layer disposed between the silicon substrate and the external connecting terminal, a connecting terminal disposed on the active surface side of the silicon substrate, and a vibration gyro element having weight sections as mass adjustment sections, the vibration gyro element is held by the silicon substrate due to connection between the connection electrode and the external connecting terminal, and a meltage protection layer formed in an area where the stress relaxation layer and the mass adjustment section overlap each other in a plan view is provided.. .
|Field effect transistor with narrow bandgap source and drain regions and method of fabrication|
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer.
|Soi substrate and manufacturing method thereof|
An object is to provide an soi substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an soi substrate.
|Rf power hemt grown on a silicon or sic substrate with a front-side plug connection|
A compound semiconductor device includes a plurality of high-resistance crystalline silicon epitaxial layers and a plurality of activated dopant regions disposed in a same region of at least some of the epitaxial layers so that the activated dopant regions are aligned in a vertical direction perpendicular to a main surface of the epitaxial layers. The compound semiconductor device further includes an iii-nitride compound semiconductor device structure disposed on the main surface of the epitaxial layers.
|Techniques for forming non-planar germanium quantum well devices|
Techniques are disclosed for forming a non-planar germanium quantum well structure. In particular, the quantum well structure can be implemented with group iv or iii-v semiconductor materials and includes a germanium fin structure.
A semiconductor device comprises a vertical mos transistor including a semiconductor substrate having a silicon pillar, a gate electrode formed along a sidewall of the silicon pillar, a gate insulating film formed between the gate electrode and the silicon pillar, an upper diffusion layer formed on the top of the silicon pillar, and a lower diffusion layer formed lower than the upper diffusion layer in the semiconductor substrate; and a pad electrically connected to the lower diffusion layer. Breakdown occurs between the lower diffusion layer and the semiconductor substrate when a surge voltage is applied..
|Method and apparatus for packaging phosphor-coated leds|
The present disclosure involves a method of packaging light-emitting diodes (leds). According to the method, a plurality of leds is provided over an adhesive tape.
|Silicon device on si:c-oi and sgoi and method of manufacture|
A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (sti) in a substrate and providing a first material and a second material on the substrate.
|Semiconductor device and method for manufacturing same|
A semiconductor device includes: a substrate made of silicon carbide; an insulating film formed on a surface of the substrate; a buffer film containing no al; and an electrode containing al. The substrate has an electrically conductive region.
|Nitride semiconductor structure|
A nitride semiconductor structure including a silicon substrate, a nucleation layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer disposed on the silicon substrate includes a cubic silicon carbon nitride (sicn) layer.
|Low temperature poly-silicon thin film transistor, manufacturing method thereof, and display device|
The present invention discloses a low temperature poly-silicon thin film transistor, a manufacturing method thereof, and a display device. Particularly, a metal film is formed between source and drain electrodes and a first conductive layer, and the metal film reacts with the poly-silicon of the source and drain electrodes to form metal silicide, whereby activating the source and drain electrodes at a low temperature.
|Semiconductor storage device and method for manufacturing same|
Disclosed are a semiconductor storage device and a manufacturing method. The storage device has: a substrate; a first word line above the substrate; a first laminated body above the first word line and having n+1 first inter-gate insulating layers and n first semiconductor layers alternately laminated; a first bit line above the laminated body and extending in a direction that intersects the first word line; a first gate insulating layer on side surfaces of the first inter-gate insulating layers and the first semiconductor layers; a first channel layer on the side surface of the first gate insulating layer; and a first variable resistance material layer on the side surface of the first channel layer.
|Reram cells including taxsiyn embedded resistors|
Provided are resistive random access memory (reram) cells and methods of fabricating thereof. A reram cell includes an embedded resistor and a resistive switching layer connected in series with this resistor.
|Diffusion barrier layer for resistive random access memory cells|
Provided are resistive random access memory (reram) cells having diffusion barrier layers formed from various materials, such as beryllium oxide or titanium silicon nitrides. Resistive switching layers used in reram cells often need to have at least one inert interface such that substantially no materials pass through this interface.
|Method of manufacturing silicon oxide|
Provided is a method of manufacturing silicon oxide by which an amount of oxygen of the silicon oxide may be controlled. The method of manufacturing silicon oxide may include mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, and reacting the mixture of silicon and silicon dioxide in a reducing atmosphere..
|Compositions for use in semiconductor devices|
An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer.
|Radiation detection system including a scintillating material and an optical fiber|
A radiation detection system can include optical fibers and a material disposed between the optical fibers. In an embodiment, the material can include a fluid, such as a gas, a liquid, or a non-newtonian fluid.
|Furnace system having hybrid microwave and radiant heating|
A furnace system for thermal processing of products and materials is disclosed which is particularly useful in processing touch screens for computer tablets and silicon wafers employed in fabricating solar cells. The system employs a hybrid of microwave and radiant heating of workpieces to provide controlled heating of the workpieces.