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Silicon patents



      
           
This page is updated frequently with new Silicon-related patents. Subscribe to the Silicon RSS feed to automatically get the update: related Silicon RSS feeds.

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Date/App# patent app List of recent Silicon-related patents
04/10/14
20140100401
 Catalyst for the alkylation of aromatic hydrocarbons patent thumbnailCatalyst for the alkylation of aromatic hydrocarbons
The present invention relates to catalyst composition prepared by a method wherein an aluminosilicate zeolite having its pores filled with templating agent with a specific organic silicon compound to deposit said organic silicon compound on the surface of the zeolite to provide an organosilicon treated catalyst precursor; and calcining the organosilicon treated catalyst precursor under conditions sufficient to remove the templating agent from the zeolite. Furthermore, the present invention relates to a method for preparing said catalyst composition and a process for alkylation of an aromatic hydrocarbon comprising contacting the catalyst composition of the present invention with a feed stream comprising said aromatic hydrocarbon and an alkylating agent under aromatic alkylation conditions..
04/10/14
20140100392
 Method for hydroxylation of phenol patent thumbnailMethod for hydroxylation of phenol
A method for hydroxylation of phenol is disclosed. The method includes the step of performing a reaction of phenol and hydrogen peroxide to form diphenol in the presence of solid catalyst with zeolite framework, wherein the solid catalyst includes silicon oxide, titanium oxide and cobalt oxide.
04/10/14
20140100387
 Process for preparing cyclohexanepolycarboxylic acid derivatives having a low proportion of by-products patent thumbnailProcess for preparing cyclohexanepolycarboxylic acid derivatives having a low proportion of by-products
The present invention relates to a process for preparing at least one cyclohexanepolycarboxylic acid or a derivative thereof by bringing at least one corresponding benzenepolycarboxylic acid or a derivative thereof into contact with a hydrogen-comprising gas in the presence of at least one coated catalyst comprising an active metal selected from the group consisting of ruthenium, rhodium, palladium, platinum and mixes thereof, applied to a support material comprising silicon dioxide, where the pore volume of the support material is from 0.6 to 1.0 ml/g, determined by hg porosimetry, the bet surface area is from 280 to 500 m2/g, at least 90% of the pores present have a diameter of from 6 to 12 nm, and from 40 to 70% by weight of the active metal, based on the total amount of the active metal, are present in the catalyst coating up to a penetration depth of 200 μm, wherein the contacting is carried out at a superficial velocity of not more than 50 m/h.. .
04/10/14
20140100349
 Silicic acid (hetero) polycondensates comprising organically polymerisable groups and either sulphonate groups or sulphate groups, organic polymerisates produced therefrom, and a method for producing said polycondensates patent thumbnailSilicic acid (hetero) polycondensates comprising organically polymerisable groups and either sulphonate groups or sulphate groups, organic polymerisates produced therefrom, and a method for producing said polycondensates
The invention relates to silicic acid (hetero) polycondensates consisting of at least one silane that has a group bonded to silicon by a carbon atom and that carries an organically polymerisable c═c double bond, and at least one silane that has a group bonded to silicon by a carbon atom and that carries a sulphonate group or a sulphate group of the formula —(o)d-so3m wherein d=0 or 1 and m=hydrogen, or a monovalent metal cation, or the corresponding quantity of a polyvalent metal cation, yet not including polycondensates in which the c═c double bonds are formed exclusively by methacrylic esters that are bound, in the form of a methylene acryl ester group, to the groups bonded to silicon by carbon. The invention also relates to composites that consist of such silicic acid (hetero) polycondensates in combination with fillers, and to polymers produced by organically polymerising the c═c double bonds in the polycondensates or composites.
04/10/14
20140100348
 Process for making low viscosity, fast curing silane terminated polymers patent thumbnailProcess for making low viscosity, fast curing silane terminated polymers
Methods of producing a composition comprising a crosslinkable silane-terminated polymer having at least one cross-linkable silyl group in each molecule are provided. The method may comprise providing a polymer having at least one unsaturated group and at least one alcohol hydroxyl group in each molecule and having a number average molecular weight between about 100 and about 5,000, adding to the polymer a compound having a hydrogen-silicon bond and a crosslinkable silyl group in each molecule and a hydrosilylation catalyst to thereby carry out a hydrosilylation reaction to form a composition comprising hydrosilylated polymers, wherein the hydrosilylation reaction has a hydrosilylation efficiency greater than 50% as determined by 1h-nmr, capping the hydrosilylated polymers by adding the hydrosilylated polymer to at least one isocyanate at an index of between about 100 and about 250, and reacting the isocyanate capped hydrosilylated polymer with a polyol having a nominal functionality of at least 2 to form the composition comprising a crosslinkable silane-terminated polymer..
04/10/14
20140100291
 Actinically-crosslinkable siloxane-containing copolymers patent thumbnailActinically-crosslinkable siloxane-containing copolymers
The invention provide a class of actinically-crosslinkable silicone-containing prepolymers obtained by functionalizing an intermediary copolymer to have two or more thiol or ethylenically-unsaturated groups covalently attached thereto, wherein the intermediary copolymer is an atom-transfer radical polymerization (atrp) product of a reactive mixture comprising a polysiloxane atrp macroinitiator and at least one hydrophilic vinylic monomer. The present invention is also related to silicone hydrogel contact lenses made from a prepolymer of the invention and methods for making the contact lenses in a cost-effective way and with high consistency and high fidelity to the original lens design..
04/10/14
20140100104
 Carbon fiber-reinforced silicon carbide composite material and method of preparing the same patent thumbnailCarbon fiber-reinforced silicon carbide composite material and method of preparing the same
The present invention provides a method of preparing a carbon fiber-reinforced silicon carbide composite material, wherein carbon nanotubes are formed in the composite material, and then metal silicon is melted and infiltrated into the composite material, so the amount of unreacted metal is reduced and the strength of the composite material is improved, and provides a carbon fiber-reinforced silicon carbide composite material prepared by the method.. .
04/10/14
20140099797
 Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus patent thumbnailMethod of manufacturing semiconductor device, substrate processing method and substrate processing apparatus
A silicon oxide film is formed, having a specific film thickness on a substrate by alternately repeating: forming a silicon-containing layer on the substrate by supplying a source gas containing silicon, to the substrate housed in a processing chamber and heated to a first temperature; and oxidizing and changing the silicon-containing layer formed on the substrate, to a silicon oxide layer by supplying reactive species containing oxygen to the substrate heated to the first temperature in the processing chamber under a pressure atmosphere of less than atmospheric pressure, the reactive species being generated by causing a reaction between an oxygen-containing gas and a hydrogen-containing gas in a pre-reaction chamber under a pressure atmosphere of less than atmospheric pressure and heated to a second temperature equal to the first temperature or higher than the first temperature.. .
04/10/14
20140099792
 Single fin cut employing angled processing methods patent thumbnailSingle fin cut employing angled processing methods
Fin-defining spacers are formed on an array of mandrel structure. Mask material portions can be directionally deposited on fin-defining spacers located on one side of each mandrel structure, while not deposited on the other side.
04/10/14
20140099780
 Laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation patent thumbnailLaser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation
Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation. A method includes forming a dopant-containing amorphous silicon layer stack on at least one portion of a surface of a crystalline semiconductor layer, and irradiating a selected area of the dopant-containing amorphous silicon layer stack, wherein the selected area of the dopant-containing amorphous silicon layer stack interacts with an upper portion of the underlying crystalline semiconductor layer to form a doped, conductive crystalline region, and each non-selected area of the dopant-containing amorphous silicon layer stack remains intact on the at least one portion of the surface of the crystalline semiconductor layer..
04/10/14
20140099776
Compressively strained soi substrate
A method of forming a strained silicon-on-insulator includes forming a first wafer having a compressively strained active semiconductor layer, forming a second wafer having an insulation layer formed above a bulk semiconductor layer, and bonding the compressively strained active semiconductor layer of the first wafer to the insulation layer of the second wafer.. .
04/10/14
20140099773
Dual shallow trench isolation liner for preventing electrical shorts
A shallow trench is formed to extend into a handle substrate of a semiconductor-on-insulator (soi) layer. A dielectric liner stack of a dielectric metal oxide layer and a silicon nitride layer is formed in the shallow trench, followed by deposition of a shallow trench isolation fill portion.
04/10/14
20140099770
Semiconductor device and a method of manufacturing the same and designing the same
There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary bl between the element forming region da and dummy region fa by placing the first dummy pattern dp1 of relatively wider area and the second dummy pattern dp2 of relatively small area in the dummy region fa.
04/10/14
20140099769
Method to protect against contact related shorts on utbb
Isolation trenches are etched through an active silicon layer overlying a buried oxide on a substrate into the substrate, and through any pad dielectric(s) on the active silicon layer. Lateral epitaxial growth of the active silicon layer forms protrusions into the isolation trenches to a lateral distance of at least about 5 nanometers, and portions of the isolation trenches around the protrusions are filled with dielectric.
04/10/14
20140099763
Forming silicon-carbon embedded source/drain junctions with high substitutional carbon level
Embodiment of the present invention provides a method of forming a semiconductor device. The method includes providing a semiconductor substrate; epitaxially growing a silicon-carbon layer on top of the semiconductor substrate; amorphizing the silicon-carbon layer; covering the amorphized silicon-carbon layer with a stress liner; and subjecting the amorphized silicon-carbon layer to a solid phase epitaxy (spe) process to form a highly substitutional silicon-carbon film.
04/10/14
20140099760
Method for fabricating semiconductor device
A method for fabricating a semiconductor device, wherein the method comprises steps as follows: a dummy gate with a poly-silicon gate electrode and a passive device having a poly-silicon element layer are firstly provided. A hard mask layer is then formed on the dummy gate and the passive device.
04/10/14
20140099751
Method for forming doping region and method for forming mos
The present invention provides a method of forming a doping region. A substrate is provided, and a poly-silicon layer is formed on the substrate.
04/10/14
20140099748
Hybrid multi-junction photovoltaic cells and associated methods
A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap group ib-iiib-vib2 material solar absorber layer is formed on the back contact layer.
04/10/14
20140099746
Method of manufacturing solar cell module
A method of manufacturing a solar cell module includes pressing a first silicone gel sheet provided on a sunlight receiving surface and a second silicone gel sheet provided on an opposite side sunlight non-receiving surface in vacuum to encapsulate the solar cell string with the first and second silicone gel sheets; disposing the sunlight receiving side of the first silicone gel sheet on one surface of a transparent light receiving panel and disposing butyl rubber in a picture frame-like shape along an outer peripheral portion of the first silicone gel sheet and laying the light receiving panel and the light non-receiving panel or back sheet over each other with the silicone gel sheet-encapsulated solar cell string on the inside, and pressing them at 100 to 150° c. In vacuum to press bond the light receiving panel and the non-receiving panel to each other through the butyl rubber..
04/10/14
20140099745
Silicon-based visible and near-infrared optoelectric devices
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate.
04/10/14
20140099675
Reusable pcr amplification system and method
A dna amplification device utilizing a polydimethylsiloxane (pdms) and silicon substrate coated with spin-on glass (sog) is provided. This pdms layer is irreversibly bonded to the sog layer of the silicon substrate using oxygen plasma.
04/10/14
20140099554
Material for electrode of power storage device, power storage device, and electrical appliance
To improve the reliability of a power storage device. A granular active material including carbon is used, and a net-like structure is formed on part of a surface of the granular active material.
04/10/14
20140099542
Lithium ion secondary battery electrode, manufacturing process for the same, and lithium ion secondary battery using the electrode
A lithium ion secondary battery electrode includes a current collector, an active material layer containing a binder formed on a surface of the current collector, and a coated layer formed on the surface of at least a part of the active material layer, wherein the coated layer contains a silicone-acrylic graft copolymer cured substance including an acrylic type main chain having a functional group and a side chain having a silicone graft-polymerized to the acrylic type main chain, and the coated layer is chemically bonded with the binder.. .
04/10/14
20140099539
Negative electrode for lithium-ion secondary battery, manufacturing method thereof, and lithium-ion secondary battery
To provide a lithium-ion secondary battery which has high charge and discharge capacity, is capable of being charged and discharged at high rate and has good cycle characteristics. A negative electrode includes a current collector and a negative electrode active material layer.
04/10/14
20140099478
Block copolymer assembly
The embodiments disclose a block copolymer assembly structure, including a first pattern and second pattern with a first density of patterned features integrated in data and servo zones, a silicon substrate with thin film layers deposited thereon and patterned using the first density of first pattern and second pattern features and a template fabrication pattern with a second density greater than the first density created using ordered block copolymer periodic structures across a portion of the substrate.. .
04/10/14
20140099474
Nanoimprint mold and curved surface body
A nanoimprint mold for a curved surface is provided and includes a silicone rubber elastic body having an hs rubber hardness, in the case of a thickness of 250 μm, of 10 to 55 and includes fine depressions and protrusions formed on the surface. According to the nanoimprint mold for a curved surface, a nanoimprint can be formed even on a curved surface..
04/10/14
20140099230
Aluminum alloy that is not sensitive to quenching, as well as method for the production of a semi-finished product
An aluminum alloy that is not sensitive to quenching, for the production of high-strength forged pieces that are low in inherent tension, and high-strength extruded and rolled products, consisting of: 7.0-10.5 wt. % zinc, 1.0-2.5 wt.
04/10/14
20140099051
Rolling sliding member, method of manufacturing the same, and rolling bearing
A steel material which contains 0.16 to 0.19% of carbon by mass, 0.15 to 0.35% of silicon by mass, 0.20 to 1.55% of manganese by mass, and 2.5 to 3.2% of chromium by mass, of which remaining part is formed of iron and incidental impurities, and which contains 0.01 to 0.2% of nickel by mass as an incidental impurity and higher than or equal to 0.001% and lower than 0.15% of molybdenum by mass as an incidental impurity, and which has a hardenability index of higher than or equal to 5.4 is subjected to a carbonitriding step, a process annealing step, a quenching step, a tempering step and a finishing step. Thus, there is obtained a rolling sliding member made of the steel material, and having satisfactory corrosion resistance and crack resistance and having a sufficiently long useful life even under an environment where rust is easily formed..
04/10/14
20140098415
Coated article with low-e coating having low visible transmission
This invention relates to a coated article including a low-emissivity (low-e) coating. In certain example embodiments, the low-e coating is provided on a substrate (e.g., glass substrate) and includes at least first and second infrared (ir) reflecting layers (e.g., silver based layers) that are spaced apart by contact layers (e.g., nicr based layers) and a dielectric layer of or including a material such as silicon nitride.
04/10/14
20140097891
Reconfiguring through silicon vias in stacked multi-die packages
Through silicon vias (tsvs) in a stacked multi-die integrated circuit package are controlled to assume different connection configurations as desired during field operation of the package in its normal mission mode. Tsv connections may be reconfigured to connect an affected die in a manner different from, for example, a factory default connection of that die.
04/10/14
20140097727
Securing structure for fan sensing element
A securing structure for fan sensing element includes a substrate and a stator. The substrate has a first face and at least one electronic element plug-in connected to the first face.
04/10/14
20140097689
Static transfer switch off detection and transfer management
A static transfer switch is used for switching an output load from a first power source to a second power source. A first switching unit has a first pair of silicon controlled rectifiers (scr).
04/10/14
20140097574
Seal ring
The objective of the present invention is to provide a seal ring having excellent dimensional stability and fitting properties with an opposing member, is able to effectively prevent leakage of oil even at very low hydraulic pressure, and also having excellent sliding properties. The seal ring is produced from a resin composition comprising (a) a poly(phthalamide) and (b) at least one component selected from among elastomers, crosslinked rubbers and dynamically crosslinked resins.
04/10/14
20140097541
Multilayer line trimming
Substantially simultaneous plasma etching of polysilicon and oxide layers in multilayer lines in semiconductors allows for enhanced critical dimensions and aspect ratios of the multilayer lines. Increasing multilayer line aspect ratios may be possible, allowing for increased efficiency, greater storage capacity, and smaller critical dimensions in semiconductor technologies..
04/10/14
20140097540
Semiconductor structure
A semiconductor structure includes a silicon substrate, a titanium layer, a nickel layer, a silver layer and a metallic adhesion layer, wherein the silicon substrate comprises a back surface, and the titanium layer comprises an upper surface. The titanium layer is formed on the back surface, the nickel layer is formed on the upper surface, the silver layer is formed on the nickel layer, and the metallic adhesion layer is formed between the nickel layer and the silver layer..
04/10/14
20140097539
Technique for uniform cmp
Pitch-dependent dishing and erosion following cmp treatment of copper features is quantitatively assessed by atomic force microscopy (afm) and transmission electron microscopy (tem). A new sequence of processing steps presented herein is used to prevent dishing and to reduce significantly the local pitch- and pattern density-induced cmp non-uniformity for copper metal lines having widths and spacing in the range of about 32-128 nm.
04/10/14
20140097521
Silicon on nothing devices and methods of formation thereof
In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate.
04/10/14
20140097510
Photodiode and method for producing the same, photodiode array, spectrophotometer and solid-state imaging device
Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulator layer, and is smaller than a penetration depth of ultraviolet light.. .
04/10/14
20140097508
Accelerometer and its fabrication technique
An accelerometer has e-shaped resilient beams to isolate stress and reduce deformation. A top cap silicon wafer and a bottom cap silicon wafer are both coupled with a measurement mass to form a capacitor.
04/10/14
20140097500
Semiconductor device
A semiconductor device includes a first planar semiconductor (e.g., silicon) layer, first and second pillar-shaped semiconductor (e.g., silicon) layers, a first gate insulating film, a first gate electrode, a second gate insulating film, a second gate electrode, a first gate line connected to the first and second gate electrodes, a first n-type diffusion layer, a second n-type diffusion layer, a first p-type diffusion layer, and a second p-type diffusion layer. A center line extending along the first gate line is offset by a first predetermined amount from a line connecting a center of the first pillar-shaped semiconductor layer and a center of the second pillar-shaped semiconductor layer..
04/10/14
20140097494
Method for producing semiconductor device and semiconductor device
A method for producing a semiconductor device includes forming a fin-shaped silicon layer, a first insulating film around the fin-shaped silicon layer, a pillar-shaped silicon layer on the fin-shaped silicon layer, a gate electrode and a gate insulating film around the pillar-shaped silicon layer, a gate line connected to the gate electrode, a first diffusion layer in an upper portion of the pillar-shaped silicon layer, a second diffusion layer in a lower portion of the pillar-shaped silicon layer and an upper portion of the fin-shaped silicon layer, and a first silicide and a second silicide on the first diffusion layer and the second diffusion layer; an interlayer insulating film to expose an upper portion of the pillar-shaped silicon layer; etching the interlayer insulating film to form a contact hole; depositing a metal to form the first contact on the second silicide; and performing etching to form the metal wire.. .
04/10/14
20140097488
Method for producing a semiconductor device and field-effect semiconductor device
A method for producing a semiconductor device is provided. The method includes providing a wafer including a main surface and a silicon layer arranged at the main surface and having a nitrogen concentration of at least about 3*1014 cm−3, and partially out-diffusing nitrogen to reduce the nitrogen concentration at least close to the main surface.
04/10/14
20140097479
Pillars for vertical transistors
In order to form a more stable silicon pillar which can be used for the formation of vertical transistors in dram cells, a multi-step masking process is used. In a preferred embodiment, an oxide layer and a nitride layer are used as masks to define trenches, pillars, and active areas in a substrate.
04/10/14
20140097476
Solid-state imaging apparatus and electronic apparatus
A solid-state imaging apparatus includes a charge accumulation unit, a signal voltage detection unit, a transfer transistor, and a pinning layer. The charge accumulation unit accumulates photoelectrically converted charges, and is formed on a silicon substrate.
04/10/14
20140097469
Hydrogen mitigation schemes in the passivation of advanced devices
Embodiments of a silicon nitride (sin) passivation structure for a semiconductor device and methods of fabrication thereof are disclosed. In general, a semiconductor device includes a semiconductor body and a sin passivation structure over a surface of the semiconductor body.
04/10/14
20140097467
Compressively strained soi substrate
A method of forming a strained silicon-on-insulator includes forming a first wafer having a compressively strained active semiconductor layer, forming a second wafer having an insulation layer formed above a bulk semiconductor layer, and bonding the compressively strained active semiconductor layer of the first wafer to the insulation layer of the second wafer.. .
04/10/14
20140097465
Silicon controlled rectifier (scr) device for bulk finfet technology
Some aspects relate to a semiconductor device disposed on a semiconductor substrate. The device includes an sti region that laterally surrounds a base portion of a semiconductor fin.
04/10/14
20140097450
Diffused junction termination structures for silicon carbide devices
An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the surface of the silicon carbide layer adjacent the main junction. Charge in the junction termination region decreases with lateral distance from the main junction, and a maximum charge in the junction termination region may be less than about 2×1014 cm−2..
04/10/14
20140097447
Semiconductor device and method of manufacturing the same
Disclosed herein is a semiconductor device and method of manufacturing the semiconductor, including an n type buffer layer disposed on a first surface of an n+ type silicon carbide substrate, an n− type epitaxial layer disposed on the n type buffer layer, a first type of trench disposed on each side of a second type of trench, wherein the trenches are disposed in the n− type epitaxial layer, an n+ region disposed on the n− type epitaxial layer, a p+ region disposed in each first type of trench, a gate insulating layer disposed in the second trench, a gate material disposed on the gate insulating layer, an oxidation layer disposed on the gate material, a source electrode disposed on the n+ region, oxidation layer, and p+ region, and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate.. .
04/10/14
20140097446
Gallium nitride devices with gallium nitride alloy intermediate layer
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer.
04/10/14
20140097444
Nitride semiconductor device
A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate.
04/10/14
20140097443
Nitride semiconductor device
A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor stacked layer, a light-emitting layer and a second type nitride semiconductor layer. The nucleation layer is disposed on the silicon substrate.
04/10/14
20140097442
Nitride semiconductor device
A nitride semiconductor device includes a silicon substrate, a nucleation layer, a first buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate.
04/10/14
20140097434
Back-end-of-line metal-oxide-semiconductor varactors
Device structures, design structures, and fabrication methods for a varactor. The device structure includes a first electrode formed on a dielectric layer, and a semiconductor body formed on the first electrode.
04/10/14
20140097168
Low-manganese gas-shielded flux cored welding electrodes
A gas-shielded flux cored welding electrode comprises a ferrous metal sheath and a core within the sheath enclosing core ingredients. The core ingredients and sheath together comprise, in weight percentages based on the total weight of the core ingredients and the sheath: 0.25 to 1.50 manganese; 0.02 to 0.12 carbon; 0.003 to 0.02 boron; 0.2 to 1.5 silicon; 0 to 0.3 molybdenum; at least one of titanium, magnesium, and aluminum, wherein the total content of titanium, magnesium, and aluminum is 0.2 to 2.5; 3 to 12 titanium dioxide; at least one arc stabilizer, where the total content of arc stabilizers is 0.05 to 1.0; no greater than 10 of additional flux system components; remainder iron and incidental impurities..
04/10/14
20140097153
Method of plasma etching
A method of plasma etching a silicon carbide workpiece includes forming a mask on a surface of the silicon carbide workpiece, performing an initial plasma etch on the masked surface using a first set of process conditions, wherein the plasma is produced using an etchant gas mixture which includes i) oxygen and ii) at least one fluorine rich gas which is present in the etchant gas mixture at a volume ratio of less than 50%, and subsequently performing a bulk plasma etch process using a second set of process conditions which differ from the first set of process conditions.. .
04/10/14
20140097092
Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
A composition comprising a source of metal ions and at least one polyaminoamide, said polyaminoamide comprising amide and amine functional groups in the polymeric backbone and aromatic moieties attached to or located within said polymeric backbone.. .


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