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Silicon patents



      
           
This page is updated frequently with new Silicon-related patent applications. Subscribe to the Silicon RSS feed to automatically get the update: related Silicon RSS feeds. RSS updates for this page: Silicon RSS RSS


Finfet device and method of fabricating same

Lithium battery

Date/App# patent app List of recent Silicon-related patents
07/17/14
20140200529
 Post-nipple reconstruction protector patent thumbnailnew patent Post-nipple reconstruction protector
An improved post-operative dressing for providing both breast and, notably, nipple reconstruction and which in particular establishes custom lateral supporting of the nipple annulus. A body is constructed of a medical grade silicone and exhibits a three dimensional shape adapted for placement over the reconstructed breast and an aperture defined by an inner rim configured within the body is adapted to seat therethrough an associated nipple graft or flap in a laterally supporting and non-pressure applied fashion.
07/17/14
20140200300
 Precursor polyelectrolyte complexes compositions patent thumbnailnew patent Precursor polyelectrolyte complexes compositions
The invention relates to compositions and methods of treatment employing compositions comprising polyelectrolyte complexes. The compositions include a water-soluble first polyelectrolyte bearing a net cationic charge or capable of developing a net cationic charge and a water-soluble second polyelectrolyte bearing a net anionic charge or capable of developing a net anionic charge.
07/17/14
20140200296
 Highly pigmented aqueous coating compositions with improved resistance to blocking patent thumbnailnew patent Highly pigmented aqueous coating compositions with improved resistance to blocking
The organosilicon composition is advantageously supplied in the form of an aqueous emulsion.. .
07/17/14
20140200286
 Silicone hydrogel contact lenses patent thumbnailnew patent Silicone hydrogel contact lenses
Silicone hydrogel contact lenses are provided which have reduced modulus and contact angle properties, and which have acceptable wettabilities for use in daily wear and extended or continuous wear applications.. .
07/17/14
20140200131
 Si3n4 insulator material for corona discharge igniter systems patent thumbnailnew patent Si3n4 insulator material for corona discharge igniter systems
A silicon nitride material is disclosed which has properties beneficial for efficient operation of a corona discharge igniter system in an internal combustion gas engine.. .
07/17/14
20140199915
 Novel enhanced filamentous silicone products and processes patent thumbnailnew patent Novel enhanced filamentous silicone products and processes
Filamentous bodies which are longitudinally extended and other film-like constructions are made by combining liquid siliceous precursors with air and extruding them. Distinct types or grades of fibers, strands, and other film-like constructions are produced which have a multiplicity of useful applications and indications for use owing to their inherent memory, compactability, tensile strength and density.
07/17/14
20140199909
 Silicone-organic resin composite laminate and manufacturing method thereof, and light-emitting semiconductor apparatus using the same patent thumbnailnew patent Silicone-organic resin composite laminate and manufacturing method thereof, and light-emitting semiconductor apparatus using the same
The invention provides a silicone-organic resin composite laminate comprises a laminate in which an organic resin layer containing an inorganic fiber cloth into which a thermosetting organic resin has been impregnated, and a silicone resin layer containing an inorganic fiber cloth into which a curable silicone resin has been impregnated, being laminated with each one or more layers, and metal foils laminated at an uppermost surface and a lowermost surface of the laminate. There can be provided a silicone-organic resin composite laminate which has low linear expansion, good thermal dimensional stability, excellent mechanical characteristics, and excellent heat resistance and light resistance, and is suitable as a mounting substrate for an led which corresponds to increase in luminance of the led mounted substrate..
07/17/14
20140199857
 Method of controlling silicon oxide film thickness patent thumbnailnew patent Method of controlling silicon oxide film thickness
A deposition process for coating a substrate with films of varying thickness on a substrate can be achieve. The thickness of the film deposition can be controlled by the separation between the substrate and a curtain.
07/17/14
20140199853
 Method of forming silicon oxide film patent thumbnailnew patent Method of forming silicon oxide film
A method of forming a silicon oxide film includes forming a silicon film on a base, the base being a surface to be processed of an object to be processed, and forming a silicon oxide film on the base by oxidizing the silicon film. Between the forming a silicon film and the forming a silicon oxide film, exposing the object to be processed having the silicon film formed thereon to an atmosphere containing at least an oxidizing component is performed..
07/17/14
20140199852
 Pattern forming method patent thumbnailnew patent Pattern forming method
A pattern forming method is provided for forming a pattern of a multilayer film including insulative films and electrically conductive films stacked together and having a hole formed therein on a substrate with the electrically conductive film being selectively accurately indented from an inner peripheral surface of the hole. The pattern forming method includes the steps of: alternately stacking at least two insulative films and at least two polysilicon films on a substrate to form a multilayer film including the at least two insulative films and the at least two polysilicon films; forming a hole extending through the at least two insulative films and the at least two polysilicon films in the multilayer film; and selectively etching the polysilicon films from a side wall of the hole through isotropic etching by feeding into the hole an etching gas prepared by diluting fluorine-containing halogen gas with an inert gas..
07/17/14
20140199851
new patent Method of patterning a silicon nitride dielectric film
Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer.
07/17/14
20140199850
new patent Dry-etch for selective oxidation removal
Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (h2).
07/17/14
20140199849
new patent Polysilicon over-etch using hydrogen diluted plasma for three-dimensional gate etch
Methods of polysilicon over-etch using hydrogen diluted plasma for three-dimensional gate etch are described. In an example, a method of forming a three-dimensional gate structure includes performing a main plasma etch on a masked polysilicon layer formed over a semiconductor fin.
07/17/14
20140199847
new patent Semiconductor device manufacturing method
According to one embodiment, a semiconductor device manufacturing method includes depositing a silicon film above a semiconductor substrate, forming an insulating film which includes silicon oxide or silicon nitride on the silicon film, forming a physical guide having a depressed portion above the insulating film, forming a directed self-assembly material layer which includes a first polymer and a second polymer in the depressed portion of the physical guide, phase-separating the directed self-assembly material layer into a first region which includes the first polymer and a second region which includes the second polymer, removing the second region, processing the insulating film by using the physical guide and the first region as masks, and transferring a pattern corresponding to the second region to the insulating film. Further, the silicon film is processed by using the pattern transferred onto the insulating film as a mask..
07/17/14
20140199846
new patent Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device is disclosed. The method may comprise: etching a plurality of first openings in an interlayer dielectric layer on a substrate; forming an opening modifying layer in the plurality of first openings; and etching the opening modifying layer until the substrate is exposed, resulting in a plurality of second openings, wherein the second openings have a depth-to-width ratio greater than that of the first openings.
07/17/14
20140199842
new patent Chemical mechanical polishing process and slurry containing silicon nanoparticles
In one aspect, a substrate chemical mechanical polishing (cmp) method for substrates is disclosed. The cmp method includes providing a substrate having a surface of silicon and copper such as through silicon via regions containing copper, and polishing the surface with a slurry containing very small silicon nanoparticles (e.g., having an average diameter less than 8 nanometers).
07/17/14
20140199839
new patent Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film
A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, heating the object on which the tungsten film or the tungsten oxide film is formed, forming a seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer by simultaneously supplying a silicon material gas including silicon and a gas including an oxidizing agent for oxidizing silicon.. .
07/17/14
20140199838
new patent Semiconductor device and method of forming through-silicon-via with sacrificial layer
A semiconductor device can be formed by first providing a semiconductor wafer, and forming a conductive via into the semiconductor wafer. A portion of the semiconductor wafer can be removed so that the conductive via extends above a surface of the semiconductor wafer.
07/17/14
20140199834
new patent Hybrid conductor through-silicon-via for power distribution and signal transmission
A method of providing signal, power and ground through a through-silicon-via (tsv), and an integrated circuit chip having a tsv that simultaneously provides signal, power and ground. In one embodiment, the method comprises forming a tsv through a semiconductor substrate, including forming a via in the substrate; and forming a multitude of conductive bars in the via.
07/17/14
20140199833
new patent Methods for performing a via reveal etching process for forming through-silicon vias in a substrate
The present disclosure provides methods for via reveal etching process to form through-silicon vias (tsvs) in a substrate. In one embodiment, a method for performing a via reveal process to form through-silicon vias in a substrate includes providing a substrate having partial through-silicon vias formed from a first surface of the substrate into a processing chamber, wherein the partial through-silicon vias formed in the substrate are blind vias, supplying an etching gas mixture including at least a fluorine containing gas and a chlorine containing gas into the processing chamber, and preferentially removing a portion of the substrate from a second surface of the substrate to expose the through-silicon vias until a desired length of the through-silicon vias is exposed from the second surface of the substrate..
07/17/14
20140199825
new patent Silicon-germanium heterojunction tunnel field effect transistor and preparation method thereof
A silicon/germanium (sige) heterojunction tunnel field effect transistor (tfet) and a preparation method thereof are provided, in which a source region of a device is manufactured on a silicon germanium (sige) or ge region, and a drain region of the device is manufactured in a si region, thereby obtaining a high on-state current while ensuring a low off-state current. Local ge oxidization and concentration technique is used to implement a silicon germanium on insulator (sgoi) or germanium on insulator (goi) with a high ge content in some area.
07/17/14
20140199824
new patent Method and apparatus for forming silicon film
A method of forming a silicon film in grooves formed on a surface of an object to be processed, the method including forming a first silicon film containing impurities so as to embed the first silicon film in the grooves of the object to be processed; doping the impurities in the vicinity of the surface of the first silicon film; expanding opening portions of the grooves by etching the first silicon film thereby forming expanded openings having grooves; and forming a second silicon film so as to embed the second silicon film in the grooves of the expanded openings is provided.. .
07/17/14
20140199823
new patent Method for manufacturing semiconductor device
An sot substrate (6), in which a silicon layer (5) is provided on a silicon substrate (3) via a silicon oxide film (4), is formed. Next, a plurality of semiconductor elements (8) is formed on a surface of the silicon layer (5).
07/17/14
20140199820
new patent Methods of forming a pattern and methods of manufacturing a semiconductor device using the same
A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (cvd) process, the underlayer including a silicon compound combined with a photoacid generator (pag), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (euv) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.. .
07/17/14
20140199813
new patent Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation
Processes for making field effect transistors relax a buried stressor layer to induce strain in a silicon surface layer above the buried stressor layer. The buried stressor layer is relaxed and the surface layer is strained by implantation into at least the buried stressor layer, preferably on both sides of a portion of the surface layer that is to be stressed.
07/17/14
20140199806
new patent Dielectric structures in solar cells
A dielectric, structure and a method of forming a dielectric structure for a rear surface of a silicon solar cell are provided. The method comprises forming a first dielectric layer over the rear surface of the silicon solar cell, and then depositing a layer of metal such as aluminum over the first dielectric layer.
07/17/14
20140199799
new patent Method and structure for adding mass with stress isolation to mems structures
A method and structure for adding mass with stress isolation to mems. The structure has a thickness of silicon material coupled to at least one flexible element.
07/17/14
20140199794
new patent Organic light emitting diode display and method for manufacturing the same
An organic light emitting diode (oled) display and a manufacturing method thereof, the oled display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern..
07/17/14
20140199787
new patent Semiconductor mask blanks with a compatible stop layer
Provided is a method for creating a mask blank that includes a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks.
07/17/14
20140199614
new patent Composite, and electrode and fuel cell including the composite
Wherein m1 is silicon (si), germanium (ge), molybdenum (mo), or a combination thereof, and 0≦x≦0.3 and 0≦y≦3; and a yttria-stabilized zirconia including cerium (ce), titanium (ti), or a combination thereof.. .
07/17/14
20140199602
new patent Lithium battery
A lithium battery including: a positive electrode including an overlithiated lithium transition metal oxide having a layered structure; a negative electrode including a silicon-based negative active material; and an electrolyte between the positive electrode and the negative electrode, the electrolyte including an electrolytic solution including a fluorinated ether solvent in an amount of 3 vol % or more based on the total volume of the electrolytic solution.. .
07/17/14
20140199594
new patent Anode active material for secondary battery and method of manufacturing the same
An anode active material for a lithium secondary battery having high-capacity and high-efficient charge/discharge characteristics. The anode active material includes silicon single phases; and silicon-metal alloy phases surrounding the silicon single phases.
07/17/14
20140199579
new patent Negative electrode active material for nonaqueous electrolyte secondary battery, nonaqueous electrolyte secondary battery and battery pack
A negative electrode active material for a nonaqueous electrolyte secondary battery has a carbonaceous substance, a silicon oxide phase in the carbonaceous substance, a silicon phase in the silicon oxide phase, and a zirconia phase in the carbonaceous substance. The negative electrode active material has a diffraction peak at 2θ=30±1° in powder x-ray diffraction measurement..
07/17/14
20140199554
new patent Metal oxide particles containing titanium oxide coated with silicon dioxide-stannic oxide complex oxide
A metal oxide particle containing titanium oxide coated with silicon dioxide-stannic oxide complex oxide including: a titanium oxide-containing core particle (a); and a coating layer with which the titanium oxide-containing core particle (a) is coated and that is made of silicon dioxide-stannic oxide complex oxide colloidal particles (b) having a mass ratio of silicon dioxide/stannic oxide of 0.1 to 5.0, wherein one or more intermediate thin film layers that are made of any one of an oxide; a complex oxide of at least one element selected from the group consisting of si, al, sn, zr, zn, sb, nb, ta, and w; and a mixture of the oxide and the complex oxide are interposed between the titanium oxide-containing core particle (a) and the coating layer made of the silicon dioxide-stannic oxide complex oxide colloidal particles (b).. .
07/17/14
20140199552
new patent Alkali-barrier layer
A glazing incorporating a glass substrate includes, on at least one portion of its surface, a stack of layers including a barrier layer to the migration of ions contained in the substrate, especially of na+ or k+ alkali metal type, the barrier layer being interposed in the stack between the surface of the substrate and at least one upper layer giving the glazing a functionality of the solar-control, low-emissivity, antireflection, photocatalytic, hydrophobic or other type, the barrier layer essentially consisting of a silicon oxide or a silicon oxynitride, wherein the silicon oxide or oxynitride includes one or more elements selected from the group consisting of al, ga and b and wherein the si/x atomic ratio is strictly less than 92/8 in the barrier layer, x being the sum of the atomic contributions of the al, ga and b elements.. .
07/17/14
20140199549
new patent Flexible bismaleimide, benzoxazine, epoxy-anhydride adduct hybrid adhesive
A resin composition which has low stress, and good adhesive property in high temperature and high moisture environments and which is useful in adhesive applications in low stress, high moisture sensitivity level electronic packages. Preferably, a flexible epoxy anhydride adduct modified solid bismaleimide and solid benzoxazine resin composition that can survive high temperature and high moisture conditions and maintain good adhesion strength and minimize the stress resulting from a coefficient of thermal expansion mismatch between a silicon die and a substrate which is ball grid array solder mask or a smart card polyethylene terephthalate or silver or copper metal lead frame..
07/17/14
20140199543
new patent Reflective optical element and optical system for euv lithography
In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an euv lithography device, there is proposed for the extreme ultraviolet and soft x-ray wavelength region a reflective optical element (50) having a reflective surface (60) with a multilayer system (51) and in the case of which the reflective surface (60) has a protective layer system (59) with an uppermost layer (56) composed of silicon carbide or ruthenium, the protective layer system (59) having a thickness of between 5 nm and 25 nm.. .
07/17/14
20140199353
new patent Three-layered hair conditioning composition and consumer product
Personal care compositions comprising three liquid layers, particular useful for treating hair. The compositions are visually three separate layers.
07/17/14
20140199252
new patent Silicone-free antiperspirant compositions and methods for manufacturing silicone-free antiperspirant compositions
Silicone-free antiperspirant compositions and methods for fabricating silicone-free antiperspirant compositions are provided. In accordance with an exemplary embodiment, an antiperspirant composition includes an active antiperspirant compound, stearyl alcohol, a c14-c16 fatty alcohol, and a carrier fluid.
07/17/14
20140199249
new patent Compositions for depositing agents using highly volatile silicone solvents
The invention relates to the field of depositing agents on surfaces using highly volatile silicone solvents. Particularly, the invention relates to novel compositions useful for depositing agents on skin and other surfaces..
07/17/14
20140199205
new patent Aluminum alloy and production method thereof
Provided are an aluminum alloy and a production method thereof. In accordance with an embodiment, an aluminum-based mother material is melted to form a molten metal.
07/17/14
20140199164
new patent Nickel-based alloy and turbine component having nickel-based alloy
A nickel-based alloy and a turbine component are disclosed. The alloy includes, by weight, between about 0.8% and about 1.3% hafnium, between about 5.7% and about 6.4% aluminum, between about 7.0% and about 10.0% cobalt, up to about 0.1% carbon, up to about 8.7% chromium, up to about 0.6% molybdenum, up to about 9.7% tungsten, up to about 0.9% titanium, up to about 0.02% boron, up to about 0.1% manganese, up to about 0.06% silicon, up to about 0.01% phosphorus, up to about 0.004% sulfur, up to about 0.02% zirconium, up to about 1.8% niobium, up to about 0.1% vanadium, up to about 0.1% copper, up to about 0.2% iron, up to about 0.003% magnesium, up to about 0.002% oxygen, up to about 0.002% nitrogen, and a balance nickel.
07/17/14
20140199040
new patent Optical fiber
Provided is an optical fiber which is provided with heat resistance and productivity and in which a transmission loss is suppressed even in a high-temperature environment. It has, on an outer periphery of a glass fiber composed of a core part and a cladding part, a coating layer made by crosslinking an energy-curable resin composition containing a silicon compound, in which the silicon compound contained in the energy-curable resin composition of the coating layer as an outermost layer has a specified structure having a cyclic silicone site having an epoxy group and a linear silicone site, with the content of the cyclic silicone site in the compound being from 10 to 30% by mass..
07/17/14
20140198825
new patent Epitaxial formation mechanisms of source and drain regions
The embodiments of mechanisms for monitoring thermal budget of an etch process of a cyclic deposition/etch (cde) process to form an epitaxially grown silicon-containing material are descried to enable and to improve process control of the material formation. The monitoring is achieved by measuring the temperature of each processed wafer as a function of process time to calculate the accumulated thermal budget (atb) of the wafer and to compare the atb with a reference atb (or optimal accumulated thermal budget, oatb) to see if the processed wafer is within an acceptable range (or tolerance).
07/17/14
20140198815
new patent Laser device
The present invention provides a light source for light circuits on a silicon platform. A vertical laser cavity is formed by a gain region arranged between a first mirror structure and a second mirror structure, both acting as mirrors, by forming a grating region including an active material in a silicon layer in a semiconductor structure or wafer structure.
07/17/14
20140198295
new patent Medical device and method for producing the same
To provide a medical device which is excellent in wettability and lubricity and is also scarcely broken since it is soft, by a medical device in which a layer made of an acidic polymer and a basic polymer is formed on at least a part of a surface of a low water content soft base material, the low water content soft base material containing, as a main component, a copolymer containing a monofunctional monomer component m having one polymerizable functional group and one silicone moiety per molecule.. .
07/17/14
20140198013
new patent Backside redistribution layer patch antenna
A patch antenna system comprising: an integrated circuit die having an active side including an active layer, and a backside; a dielectric layer formed on the backside; and a redistribution layer formed on the dielectric layer wherein the redistribution layer forms an array of patches. The patch antenna further comprises a plurality of through-silicon vias (tsv), wherein the tsvs electrically connect the array of patches to the active layer..
07/17/14
20140197865
new patent On-chip randomness generation
An on-chip true noise generator including an embedded noise source with a low-voltage, high-noise zener diode(s), and an in-situ close-loop zener diode power control circuit. The present invention proposes the use of heavily doped polysilicon and silicon p-n diode(s) structures to minimize the breakdown voltage, increasing noise level and improving reliability.
07/17/14
20140197801
new patent Silicon-based electrode for a lithium-ion cell
A silicon-based electrode includes a silicon layer on a substrate, an electrically conductive layer overlying a top surface of the silicon layer, an optional polymer layer overlying the top surface of the electrically conducting layer, and a plurality of channels extending through the electrically conductive layer and the silicon layer to the substrate. The channels define sidewalls in the silicon layer.
07/17/14
20140197583
new patent Ceramic composition and ceramic injection-molding process
A ceramic composition for an injection-molding process for producing a combustion chamber pressure sensor, in particular for producing an insulation punch of a combustion chamber pressure sensor, includes a ceramic component in a proportion of greater than or equal to 50% by weight and a glass component in a proportion of less than or equal to 50% by weight. The ceramic component includes aluminum oxide.
07/17/14
20140197522
new patent Hybrid conductor through-silicon-via for power distribution and signal transmission
A method of providing signal, power and ground through a through-silicon-via (tsv), and an integrated circuit chip having a tsv that simultaneously provides signal, power and ground. In one embodiment, the method comprises forming a tsv through a semiconductor substrate, including forming a via in the substrate; and forming a multitude of conductive bars in the via.
07/17/14
20140197513
new patent Image sensor with improved dark current performance
Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region.
07/17/14
20140197507
new patent Buried waveguide photodetector
A method of forming an integrated photonic semiconductor structure having a photodetector and a cmos device may include forming the cmos device on a first silicon-on-insulator region, forming a silicon optical waveguide on a second silicon-on-insulator region, and forming a shallow trench isolation (sti) region surrounding the silicon optical waveguide such that the shallow trench isolation electrically isolating the first and second silicon-on-insulator region. Within a first region of the sti region, a first germanium material is deposited adjacent a first side wall of the semiconductor optical waveguide.
07/17/14
20140197495
new patent Semiconductor device and method of forming the same
A semiconductor device may include an n-mos transistor, and a p-mos transistor. The p-mos transistor may include, but is not limited to, a gate insulating film and a gate electrode.
07/17/14
20140197493
new patent Defect reduction for formation of epitaxial layer in source and drain regions
The embodiments of mechanisms for forming source/drain (s/d) regions of field effect transistors (fets) described enable forming an epitaxially grown silicon-containing layer with reduced number of particles on surface of recesses. The described mechanisms also reduce the effect of the residual particles on the epitaxial growth.
07/17/14
20140197473
new patent Nonvolatile semiconductor storage device and method of manufacturing the same
A nonvolatile semiconductor storage device includes a substrate; an isolation film extending in a first direction and dividing the substrate into element regions; a cell string including memory cells in the element regions; a cell unit including the cell string and a select transistor on first directional ends of the cell string; diffusion layers formed in a portion of the element region first directionally beside the select gate electrode, the diffusion layers being adjacent to one another in a second direction intersecting with the first direction; and contacts extending through an interlayer insulating film and contacting the diffusion layers. An upper surface of the isolation film located between the diffusion layers is lower than an upper surface of the substrate.
07/17/14
20140197460
new patent Semiconductor device, method for manufacturing the same, power supply device, and high-frequency amplifier
A semiconductor device includes: a compound semiconductor stack structure including a plurality of compound semiconductor layers stacked over a semiconductor substrate; and a first insulating film covering the surface of the compound semiconductor stack structure, the first insulating film being a silicon nitride film including, on the top side, a first region containing nitrogen element in excess of the stoichiometric ratio.. .
07/17/14
20140197458
new patent Finfet device and method of fabricating same
An integrated circuit structure includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate, wherein the isolation regions have opposite sidewalls facing each other. A fin structure includes a silicon fin higher than top surfaces of the isolation regions, a germanium-containing semiconductor region overlapped by the silicon fin, silicon oxide regions on opposite sides of the germanium-containing semiconductor region, and a germanium-containing semiconductor layer between and in contact with the silicon fin and one of the silicon oxide regions..
07/17/14
20140197422
new patent Silicon carbide semiconductor device
A silicon carbide semiconductor device includes a silicon carbide substrate. The silicon carbide substrate is composed of an element region provided with a semiconductor element portion and a termination region surrounding the element region as viewed in a plan view.
07/17/14
20140197416
new patent Memories and methods of forming thin-film transistors using hydrogen plasma doping
Methods of forming thin-film transistors and memories are disclosed. In one such method, polycrystalline silicon is hydrogen plasma doped to form doped polycrystalline silicon.
07/17/14
20140197411
new patent Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device
A methodology enabling the formation of steep channel profiles for devices, such as ssrw fets, having a resultant channel profiles that enables suppression of threshold voltage variation and the resulting device are disclosed. Embodiments include providing sti regions in a silicon wafer; performing a deep well implantation of a dopant into the silicon wafer between sti regions; forming a recess in the doped silicon wafer between the sti regions; performing a shallow well implantation of the dopant into the silicon wafer in the recess; and forming si:c on the doped silicon wafer in the recess..
07/17/14
20140197407
new patent Semiconductor device and method for manufacturing the same
Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked.
07/17/14
20140197404
new patent Thin-film transistor active device
The present invention relates to a thin-film transistor (tft) active device. The tft active device includes: a gate electrode; a gate insulation layer covering the gate electrode; an oxide semiconductor layer formed on the gate insulation layer; a first protection layer formed on the oxide semiconductor layer; a source/drain electrode electrically connected with the oxide semiconductor layer; and a second protection layer covering the source/drain electrode.
07/17/14
20140197358
new patent Positive electrode active material for sodium battery, and method of producing the same
(wherein m is at least one selected from the group consisting of titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper and zinc; a is at least one selected from the group consisting of aluminum, silicon, phosphorus, sulfur, titanium, vanadium and tungsten; x satisfies the condition 4≧x≧2; y satisfies the condition 4≧y≧1, z satisfies the condition 4≧z≧0; w satisfies the condition 1≧w≧0; and one or both of z and w is 1 or more).. .
07/17/14
20140197356
new patent Cmp compositions and methods for suppressing polysilicon removal rates
The present invention provides a chemical-mechanical polishing (cmp) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof.
07/17/14
20140197135
new patent Plasma processing method and plasma processing apparatus
A plasma processing method includes forming a silicon oxide film on a surface of a member provided within a chamber with plasma of a silicon-containing gas without oxygen while controlling a temperature of the member to be lower than a temperature of another member; performing a plasma process on a target object loaded into the chamber with plasma of a processing gas after the silicon oxide film is formed on the surface of the member; and removing the silicon oxide film from the surface of the member with plasma of a fluorine-containing gas after the target object on which the plasma process is performed is unloaded to an outside of the chamber.. .
07/17/14
20140197133
new patent Compositions for controlled assembly and improved ordering of silicon-containing block copolymers
The invention provides compositions and methods for inducing and enhancing order and nanostructures in organosilicon block copolymers compositions by including certain organic additives in such compositions that include one or more moieties comprising a hydrogen bond acceptor or a hydrogen bond donor. Such block copolymer compositions may be used, for example, as a mask for lithographic patterning as is used, for example, during various stages of semiconductor device fabrication..


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This listing is a sample listing of patent applications related to Silicon for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Silicon with additional patents listed. Browse our RSS directory or Search for other possible listings.
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