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Silicon patents



      
           
This page is updated frequently with new Silicon-related patent applications. Subscribe to the Silicon RSS feed to automatically get the update: related Silicon RSS feeds. RSS updates for this page: Silicon RSS RSS


Arrangement for joining a silicone part to an adhesible part

Reducing contact resistance by direct self-assembling

Interconnect structures for stacked dies, including penetrating structures for through-silicon vias, and associated…

Date/App# patent app List of recent Silicon-related patents
07/24/14
20140208279
 System and method of testing through-silicon vias of a semiconductor die patent thumbnailnew patent System and method of testing through-silicon vias of a semiconductor die
A method includes contacting a first group of through-silicon vias (tsvs) contacts with a multi-contact probe and applying a first voltage value to each of the first group of tsv contacts via the multi-contact probe, where the first group of tsv contacts corresponds to a first group of tsvs. The method also includes determining, based on a second voltage value detected at a particular tsv of the first group of tsvs, whether the particular tsv corresponds to a tsv test result..
07/24/14
20140206830
 Silicone-containing monomer patent thumbnailnew patent Silicone-containing monomer
The monomer is used for the preparation of a composition for use in manufacturing of ophthalmic lenses potentially with anti-infective properties. Also, methods of making the present monomers are described..
07/24/14
20140206816
 Addition-type organosilicon sealant for halogen-free conductive and flame-resistant electric products patent thumbnailnew patent Addition-type organosilicon sealant for halogen-free conductive and flame-resistant electric products
This invention refers to an addition-type organosilicon sealant for halogen-free conductive and flame-resistant electric products, which consists of: a) vinyl silicone oil; b) silicon dioxide treated by silane or aluminium oxide treated by silane; c) a compound in which every molecule contains h—si functional group, the mass content of h is 0.1-1.2%; d) hydrolysis product from hydrolysis reaction between vinyl trimethoxy (triethoxy) silane and γ-(2,3-epoxy propoxy) propyl trimethoxy (triethoxy) silane; e) chloroplatinic acid or 1,3-divinyl-1,1,3,3-tetramethyl disiloxane platinum complex; f) any one or combination of carbon black, iron black, titanium dioxide, cerium oxide, benzotriazole, zinc carbonate and magnesium carbonate. The substance provided by this invention, which is halogen-free and flame-resistant with certain heat conductivity and viscosity, is quite applicable to sealing of electric products..
07/24/14
20140206812
 Thermosetting resins with enhanced cure characteristics containing organofunctional silane moieties patent thumbnailnew patent Thermosetting resins with enhanced cure characteristics containing organofunctional silane moieties
A reactive, non-hydrolyzable silane. The silane comprises a quaternary silicon atom and first and second terminal groups.
07/24/14
20140206803
 Thermoplastic resin composition for reduction of squeaking noises and structure of reduced squeaking noises patent thumbnailnew patent Thermoplastic resin composition for reduction of squeaking noises and structure of reduced squeaking noises
Provided is a thermoplastic resin composition [x] for reduction of squeaking noises containing a rubber-reinforced vinyl resin [a] obtained by polymerizing a vinyl monomer [b1] in the presence of an ethylene -α- olefin rubber polymer [a1] having tm (melting point) of 0° c. Or higher, wherein an amount of silicon contained in the thermoplastic resin composition [x] is 0.15% by mass or less based on 100% by mass of the thermoplastic resin composition [x].
07/24/14
20140206200
 Process for increasing the hydrophilicity of silicon surfaces following hf treatment patent thumbnailnew patent Process for increasing the hydrophilicity of silicon surfaces following hf treatment
A method for performing an oxide removal process is described. The method includes providing a substrate having an oxide layer, and preparing a patterned mask layer on the oxide layer, wherein the patterned mask layer has a pattern exposing at least a portion of the oxide layer.
07/24/14
20140206196
 Dry etching method patent thumbnailnew patent Dry etching method
There is provided according to the present invention a dry etching method for a laminated film, the laminated film being formed on a substrate and having a laminated structure in which silicon layers and insulating layers are laminated together with a hole or groove defined therein in a direction perpendicular to a surface of the substrate, the dry etching method comprising etching, with an etching gas, parts of the silicon layers appearing on an inner surface of the hole or groove, characterized in that the etching gas comprises: at least one kind of gas selected from the group consisting of clf3, brf5, brf3, if7 and if5; and f2. It is possible by such a dry etching method to prevent non-uniformity of etching depth between the silicon layers..
07/24/14
20140206195
 Process for removing carbon material from substrates patent thumbnailnew patent Process for removing carbon material from substrates
A method of removing carbon materials, preferably amorphous carbon, from a substrate includes dispensing a liquid sulfuric acid composition including sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the carbon material coated substrate. The liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor.
07/24/14
20140206188
 Method of forming a metal silicide layer patent thumbnailnew patent Method of forming a metal silicide layer
A method for forming a metal silicide layer is disclosed. The method includes the steps of: forming a first metal layer with a thickness less than 10 nm on a silicon substrate; forming a second metal layer with a thickness more than 10 nm on the first metal layer; annealing the metal layers and the silicon substrate, so that a part of the second metal layer penetrates through the first metal layer, and both the part of the second metal layer penetrating through the first metal layer and a part of the first metal layer react with the silicon substrate to form the metal silicide layer, while the remaining part of the first and second metal layers form a third metal layer; and removing the third metal layer, so that the metal silicide layer can be formed in the semiconductor substrate..
07/24/14
20140206180
 Thin film formation method patent thumbnailnew patent Thin film formation method
A thin film formation method to form an amorphous silicon film containing an impurity on a surface of an object to be processed in a process chamber that allows vacuum exhaust includes supplying a silane-based gas composed of silicon and hydrogen into the process chamber in a state that the silane-based gas is adsorbed onto the surface of the object without supplying an impurity-containing gas, supplying the impurity-containing gas into the process chamber to form the amorphous silicon film containing the impurity without supplying the silane-based gas, and performing the supplying of the silane-based gas and the supplying of the impurity-containing gas alternately and repeatedly such that the impurity reacts with the silane-based gas.. .
07/24/14
20140206178
new patent Method of laser separation of the epitaxial film or of the epitaxial film layer from the growth substrate of the epitaxial semiconductor structure (variations)
The present invention proposes variations of the laser separation method allowing separating homoepitaxial films from the substrates made from the same crystalline material as the epitaxial film this new method of laser separation is based on using the selective doping of the substrate and epitaxial film with fine donor and acceptor impurities. In selective doping, concentration of free carries in the epitaxial film and substrate may essentially differ and this can lead to strong difference between the light absorption factors in the infrared region near the residual beams region where free carriers and phonon-plasmon interaction of the optical phonons with free carriers make an essential contribution to infrared absorption of the optical phonons.
07/24/14
20140206176
new patent Method for low temperature bonding and bonded structure
A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and sio2.
07/24/14
20140206167
new patent Contact structure of semiconductor device
A method of fabricating a semiconductor device comprises epitaxially-growing a strained material in a cavity of a substrate comprising a major surface and the cavity, the cavity being below the major surface. A lattice constant of the strained material is different from a lattice constant of the substrate.
07/24/14
20140206161
new patent Method of fabricating a semiconductor device having a capping layer
A method of semiconductor device fabrication includes forming a first dummy gate structure in a first region of a semiconductor substrate and forming a second dummy gate structure in a second region of the semiconductor substrate. A protective layer (e.g., oxide and/or silicon nitride hard mask) is formed on the second dummy gate structure.
07/24/14
20140206145
new patent Interconnect structures for stacked dies, including penetrating structures for through-silicon vias, and associated systems and methods
Interconnect structures for stacked dies, including penetrating structures for through-silicon vias, and associated systems and methods are disclosed. A system in accordance with a particular embodiment includes a first semiconductor substrate having a first substrate material, and a penetrating structure carried by the first semiconductor substrate.
07/24/14
20140206125
new patent Method for producing a solar cell
In a method for producing a solar cell having a substrate made of crystalline silicon, on a surface of the si substrate, a locally defined n-doped emitter region is produced by full-surface cold coating of the surface using a p-containing coating, followed by a local laser beam-doping of p atoms from the p-containing coating, and subsequent thermal driving in of the p atoms, starting from the doping-in region.. .
07/24/14
20140206123
new patent Dual layer microelectromechanical systems device and method of manufacturing same
Exemplary microelectromechanical system (mems) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (soi) substrate, wherein the soi substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a mems device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the mems device..
07/24/14
20140206112
new patent Method for reducing charge in critical dimension-scanning electron microscope metrology
Methods and compositions are provided for reducing or eliminating charge buildup during scanning electron microscopy (sem) metrology of a critical dimension (cd) in a structure produced by lithography. An under layer is utilized that comprises silicon in the construction of the structure.
07/24/14
20140206107
new patent Semiconductor ferroelectric device, manufacturing method for the same, and electronic device
A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask, forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer, forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film, and forming a ferroelectric layer on the lower electrode.. .
07/24/14
20140206090
new patent Etchant product analysis in alkaline etchant solutions
Silicon ions in an alkaline etchant solution are analyzed by acidifying a sample of the etchant solution, adding fluoride ions in excess of the concentration required to react with all of the silicon ions, and using a fluoride ion specific electrode (fise) to detect free fluoride ions in the resulting test solution. Good sensitivity and precision are provided by using a relatively acidic test solution and only a slight excess of fluoride ions, and limiting the analysis range to the maximum expected silicon concentration in the etchant solution..
07/24/14
20140205972
new patent Glass ceramic material and method
The present invention relates to a method for manufacturing of a glass ceramic material for dental applications. The method comprises: providing a first precursor comprising silicon(iv); providing a second precursor comprising zirconium(iv); hydrolyzing said first precursor and second precursor in solution; polymerizing of the hydrolysed first precursor and second precursor in a solvent, wherein polymers are formed; formation of colloids comprising said polymers; formation of a gel from said colloids; aging the gel; drying the gel; and sintering the gel under formation of a glass ceramic material..
07/24/14
20140205907
new patent Silicon-based composite and production method thereof
The present invention relates to a silicon-based composite including a silicon oxide which is coated thereon with carbon and bonded therein to lithium. The present invention also relates to a method of producing a silicon-based composite, comprising coating a surface of silicon oxide with carbon, mixing the silicon oxide coated with carbon with lithium oxide, and heat-treating a mixture of the silicon oxide coated with carbon and the lithium oxide in an inert atmosphere..
07/24/14
20140205905
new patent Ultrathin surface coating on negative electrodes to prevent transition metal deposition and methods for making and use thereof
An electrode material for use in an electrochemical cell, like a lithium-ion battery, is provided. The electrode material may be a negative electrode comprising graphite, silicon, silicon-alloys, or tin-alloys, for example.
07/24/14
20140205844
new patent Method for depositing silicon carbide film
A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate.
07/24/14
20140205806
new patent Arrangement for joining a silicone part to an adhesible part
An arrangement for joining a silicone part to an adhesible part, with an intermediate element which is joined on a first surface to the silicone part and is bonded on a second surface to an adhesible part, the first surface having an adhesive structure with micro-undercuts which are cast with the silicone part and form a micromechanical positive fit between the silicone part and the intermediate element, and a joining method.. .
07/24/14
20140205803
new patent Method for forming identification marks on silicon carbide single crystal substrate, and silicon carbide single crystal substrate
A method for forming an identification mark on a silicon carbide single crystal substrate according to the present invention includes: (a) scanning a principal surface of a silicon carbide single crystal substrate with a laser beam at a first energy density such that a groove is formed in the principal surface of the silicon carbide single crystal substrate, thereby forming an identification mark which is constituted of one or more grooves in the principal surface of the silicon carbide single crystal substrate; and (b) scanning an inside of the groove formed in the principal surface of the silicon carbide single crystal substrate with a laser beam at a second energy density that is lower than the first energy density.. .
07/24/14
20140205793
new patent Multiple-resin composite structures and methods of producing the same
Solid, flexible composite structures may include a textile arrangement of at least one textile layer constructed of textile fibers and having a distribution of pores formed therein, with a first resin filling pores having a pore diameter equal to or less than a pore diameter threshold, and a second resin bonded to the first resin and substantially filling pores having a pore diameter greater than the pore diameter threshold. Some embodiments include a rigid first resin such as an epoxy, and a flexible second resin such as a silicone.
07/24/14
20140205781
new patent Silicone espun ptfe composites
The present disclosure provides a composite material comprising a silicone component and an electrospun, porous polymeric component and methods of producing such a composite material. The layers are preferably processed so as to result in some degree of penetration of the silicone component into the pores of the electrospun polymeric component.
07/24/14
20140205557
new patent Cationic conditioner replacements
Described are personal care compositions for hair, comprising a surfactant, a silicone, and a methylcellulose that gels at 45c or less, wherein personal care composition is substantially free of cationic polymers selected from cationic cellulose derivatives, cationic guar derivatives, cationic methacrylamido polymers, polyquaternium-6, or polyquaternium-7.. .
07/24/14
20140205556
new patent Composition comprising an alkoxysilane, a fatty ester and a silicone, and cosmetic use thereof
The invention relates to a composition, especially a cosmetic composition, comprising: (i) one or more alkoxysilanes, (ii) one or more fatty esters; and (iii) one or more silicones. The invention also relates to a cosmetic process for treating keratin materials with this composition, and also to the use of this composition for caring for and/or shaping keratin materials..
07/24/14
20140205528
new patent Process for preparing a composition comprising synthetic mineral particles and composition
A process for preparing a composition including synthetic mineral particles, in which a hydrogel which is a precursor of the synthetic mineral particles is prepared via a coprecipitation reaction between at least one compound including silicon, and at least one compound including at least one metal element, characterized in that the coprecipitation reaction takes place in the presence of at least one carboxylate salt of formula r2—coom′ in which: —m′ denotes a metal chosen from the group made up of na and k, and —r2 is chosen from h and alkyl groups including fewer than 5 carbon atoms. A composition including synthetic mineral particles which is obtained by such a process is also described..
07/24/14
20140205527
new patent Method of producing gaas single crystal and gaas single crystal wafer
A method of producing a gaas single crystal having high carrier concentration and high crystallinity and to provide a gaas single crystal wafer using such a gaas single crystal. In the method of producing a gaas single crystal, a vertical boat method is performed with a crucible receiving a seed crystal, a si material, a gaas material serving as an impurity, solid silicon dioxide, and a boron oxide material, thereby growing a gaas single crystal..
07/24/14
20140205234
new patent Vertical optical coupler for planar photonic circuits
Described herein are an apparatus, system, and method for providing a vertical optical coupler (voc) for planar photonics circuits such as photonics circuits fabricated on silicon-on-insulator (soi) wafers. In one embodiment, the voc comprises a waveguide made from a material having refractive index in a range of 1.45 to 3.45, the waveguide comprising: a first end configured to reflect light nearly vertical by total internal reflection between the waveguide and another medium, a second end to receive the light for reflection, and a third end to output the reflected light.
07/24/14
20140205231
new patent Method of fabricating silicon waveguides with embedded active circuitry
A method of fabricating silicon waveguides with embedded active circuitry from silicon-on-insulator wafers utilizes photolithographic microfabrication techniques to define waveguide structures and embedded circuit recesses for receiving integrated circuitry. The method utilizes a double masking layer, one layer of which at least partially defines at least one waveguide and the other layer of which at least partially defines the at least one waveguide and at least one embedded circuit recess.
07/24/14
20140204967
new patent Thermal shunt
A thermal shunt is to transfer heat from a sidewall of a device to a silicon substrate. The device is associated with a silicon-on-insulator (soi) including a buried oxide layer.
07/24/14
20140204508
new patent Housing and electronic device using the same
A housing includes a substrate, a transition layer disposed on the substrate, and a color layer disposed on the transition layer. The transition layer is a layer of titanium-nitride and m-nitride, wherein the m is chromium, aluminum, or silicon.
07/24/14
20140204330
new patent Pipelined pixel applications in liquid crystal on silicon chip
An example embodiment includes a lcos ic. The lcos ic includes multiple pixels, a column driver, and multiple conductive lines.
07/24/14
20140204299
new patent Local buffers in a liquid crystal on silicon chip
An example embodiment includes a liquid crystal on silicon (lcos) system. The lcos system includes multiple pixels, a pixel voltage supply source (voltage source), an external buffer, and a local buffer.
07/24/14
20140204298
new patent Pixel test in a liquid crystal on silicon chip
An example embodiment includes a continuity testing method of a pixel in a liquid crystal on silicon integrated circuit. The method includes writing a first voltage to a pixel.
07/24/14
20140204150
new patent Release agent composition for solid inkjet imaging systems for improved coefficient of friction
A functional amine release agent displaying reduced coefficient of friction as compared to standard silicone oils, the release agent comprising a polydimethylsiloxane oil and a functional amine selected from the group consisting of pendant propylamines and pendant n-(2-aminoethyl)-3-aminopropyl; wherein the concentration of functional amine to polydimethylsiloxane oil is approximately less than 0.0006 meq/g. According to certain embodiments, the functional amine release agent is operable to impart a coefficient of friction of about 0.3 or more to the print media, resulting in improved finishing and converting equipment interaction..
07/24/14
20140203796
new patent Nanoelectromechanical resonators
A silicon device, e.g., a nanoelectromechanical resonator, has a silicon substrate; an oxide layer having a trench therein; a silicon device layer over the oxide layer; and a nanowire disposed at least partly over the trench. Substantially no oxide or polysilicon is over the nanowire in the trench.
07/24/14
20140203728
new patent Light emitting device package
A light emitting device package includes a substrate, a light emitting device disposed on the substrate, a reflector surrounding the light emitting device, and an encapsulant encapsulating the light emitting device. The reflector includes a silicon-based polymer which is a main body portion, and a silicon oxide layer disposed at least on a portion of a surface of the silicon-based polymer..
07/24/14
20140203478
new patent System and method for molding soft fluid-filled implant shells
Systems and methods for molding shells for fluid-filled prosthetic implants, including spinning and rotating dip- or spray-mandrels during a devolatilization step to ensure an even covering. The mandrels may be spun during the dipping or spraying step, and/or afterward while a solvent evaporates until a gum state is formed.
07/24/14
20140203446
new patent Through silicon via device having low stress, thin film gaps and methods for forming the same
Aspects of the present invention generally relate to approaches for forming a semiconductor device such as a tsv device having a “buffer zone” or gap layer between the tsv and transistor(s). The gap layer is typically filled with a low stress, thin film fill material that controls stresses and crack formation on the devices.
07/24/14
20140203439
new patent Through silicon via structure and method
A system and method for manufacturing a through silicon via is disclosed. An embodiment comprises forming a through silicon via with a liner protruding from a substrate.
07/24/14
20140203433
new patent In-situ thermoelectric cooling
Methods and structures for thermoelectric cooling of 3d semiconductor structures are disclosed. Thermoelectric vias (tevs) to form a thermoelectric cooling structure.
07/24/14
20140203415
new patent Semiconductor device and manufacturing method thereof, delamination method, and transferring method
A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a tft obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed..
07/24/14
20140203414
new patent Method of modifying surfaces
The invention provides a method for chemically modifying a surface of a substrate, preferably a silicon substrate, including the steps of providing a substrate having at least a portion of a surface thereof coated with an organic coating composition including unsaturated moieties forming a surface coating, and introducing a vapour phase reactive intermediate species based on a group 14 or group 15 element from the periodic table of elements to the substrate whereupon the reactive intermediate species is able to react with a number of the unsaturated moieties in the coating composition thereby chemically modifying the surface coating. Also disclosed is a surface-modified substrate obtained or obtainable by the method, and uses thereof in the fabrication of mems and ic devices..
07/24/14
20140203412
new patent Through silicon vias for semiconductor devices and manufacturing method thereof
The present invention provides a semiconductor wafer, a semiconductor chip and a semiconductor package. The semiconductor wafer includes a first pad, a first inter-layer dielectric and a second pad.
07/24/14
20140203407
new patent Method for low temperature bonding and bonded structure
A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and sio2.
07/24/14
20140203394
new patent Chip with through silicon via electrode and method of forming the same
The present invention provides a method of forming a chip with tsv electrode. A substrate with a first surface and a second surface is provided.
07/24/14
20140203372
new patent Semiconductor device and fabrication method thereof
A semiconductor device includes an inter-layer dielectric (ild) layer over a substrate; and a first gate feature in the ild layer, the first gate feature comprising a first gate material and having a first resistance, wherein the first gate material comprises a first conductive material. The semiconductor device further includes a second gate feature in the ild layer, the second gate feature comprising a second gate material and having a second resistance higher than the first resistance, wherein the second material comprises at least 50% by volume silicon oxide..
07/24/14
20140203365
new patent Semiconductor device
There is disclosed a semiconductor device. The device comprises: a silicon layer; a tapered insulating layer formed on the silicon layer; and a plurality of bipolar cmos dmos device layers formed above the tapered insulating layer.
07/24/14
20140203364
new patent Semiconductor device and manufacturing method of semiconductor device
A semiconductor device having an n channel misfet formed on an soi substrate including a support substrate, an insulating layer formed on the support substrate and a silicon layer formed on the insulating layer has the following structure. An impurity region for threshold adjustment is provided in the support substrate of a gate electrode so that the silicon layer contains carbon.
07/24/14
20140203360
new patent Reducing contact resistance by direct self-assembling
As stated above, methods of forming a source/drain contact for a transistor are disclosed. In one embodiment, a transistor is formed on a semiconductor-on-insulator (soi) substrate, which includes a semiconductor-on-insulator (soi) layer, a buried insulator layer and a silicon substrate.
07/24/14
20140203359
new patent Butted soi junction isolation structures and devices and method of fabrication
A structure, a fet, a method of making the structure and of making the fet. The structure including: a silicon layer on a buried oxide (box) layer of a silicon-on-insulator substrate; a trench in the silicon layer extending from a top surface of the silicon layer into the silicon layer, the trench not extending to the box layer, a doped region in the silicon layer between and abutting the box layer and a bottom of the trench, the first doped region doped to a first dopant concentration; a first epitaxial layer, doped to a second dopant concentration, in a bottom of the trench; a second epitaxial layer, doped to a third dopant concentration, on the first epitaxial layer in the trench; and wherein the third dopant concentration is greater than the first and second dopant concentrations and the first dopant concentration is greater than the second dopant concentration..
07/24/14
20140203337
new patent Method of forming gate dielectric layer and method of fabricating semiconductor device
A method for fabricating a semiconductor device includes ion-implanting germanium into a monocrystalline silicon-containing substrate; forming a gate oxide layer over a surface of the monocrystalline silicon-containing substrate and forming, under the gate oxide layer, a germanium-rich region in which the germanium is concentrated, by performing a plasma oxidation process; and crystallizing the germanium-rich region by performing an annealing process.. .
07/24/14
20140203323
new patent Primer composition and optical semiconductor apparatus using same
The invention provides a primer composition which adheres a substrate mounting an optical semiconductor device and a cured material of an addition reaction curing silicone composition that encapsulates the optical semiconductor device, includes (a) silazane compound or polysilazane compounds that has one or more silazane bonds in the molecule, (b) acrylic resin containing either one or both of acrylate ester and methacrylate ester that contains one or more sih groups in the molecule, and (c) solvent. There can be provided a primer composition in which the adhesion between a substrate mounting an optical semiconductor device and a cured material of an addition reaction curing silicone composition that encapsulates the optical semiconductor device can be improved, the corrosion of a metal electrode on the substrate can be prevented, and the heat resistance and flexibility of a primer can be improved..
07/24/14
20140203298
new patent Strained silicon carbide channel for electron mobility of nmos
A semiconductor is formed on a (110) silicon (si) substrate, with improved electron mobility. Embodiments include semiconductor devices having a silicon carbide (sic) portion in the nfet channel region.
07/24/14
20140203297
new patent Method of manufacturing substrates having improved carrier lifetimes
This invention relates to a method for depositing silicon carbide material onto a substrate such that the resulting substrate has a carrier lifetime of 0.5-1000 microseconds, the method comprising a. Introducing a gas mixture comprising a chlorosilane gas, a carbon-containing gas, and hydrogen gas into a reaction chamber containing a substrate; and b.
07/24/14
20140203294
new patent Gallium nitride devices
Semiconductor structures comprising a iii-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit, or prevent, undesirable reactions between the electrically conductive material and the other component(s) which can impair device performance.
07/24/14
20140203270
new patent Organic electroluminescent element material having silicon-containing four membered ring structure, and organic electroluminescent element
Provided are a material for an organic electroluminescent element formed of a silicon-containing four-membered ring compound, and an organic electroluminescent element using the material. The material for an organic electroluminescent element is formed of a compound represented by the following formula (1) and is used for, for example, a light-emitting layer containing a phosphorescent light-emitting dopant in an organic electroluminescent element.
07/24/14
20140203220
new patent Electrode for a li-ion battery having a polyether-siloxane copolymer as binder
Where r1 is a monovalent, sic-bonded c1-c18 hydrocarbon radical which is free of aliphatic carbon-carbon multiple bonds and a and b are nonnegative integers, with the proviso that 0.5<(a+b)<3.0 and 0<a<2, and that at least two silicon-bonded hydrogen atoms are present per molecule, by means of polyether macromers (p) containing at least two alkenyl groups per molecule and optionally further compounds (w) containing alkenyl groups, with polyethylene glycols functionalized by one allyl group being excepted from the compounds (w) as binder; and also a process for preparing a crosslinked polyether-siloxane copolymer (v) as binder for the electrode in a li-ion battery in a crosslinking step.. .
07/24/14
20140203207
new patent Anode active material for secondary battery and method of manufacturing the same
An anode active material for a lithium secondary battery having high-capacity and high-efficient charging/discharging characteristics. The anode active material includes silicon single phases, and silicon-metal alloy phases distributed around the silicon single phases.
07/24/14
20140203069
new patent Metallized film-over-foam contacts
A metallized film-over-foam contact suitable for circuit grounding of surface mount technology devices generally includes a silicone foam resilient core member, a solderable electrically conductive layer, and an adhesive bonding the solderable electrically conductive layer to the resilient core member. The adhesive has no more than a maximum of 900 parts per million chlorine, no more than a maximum of 900 parts per million bromine, and no more than a maximum of 1,500 parts per million total halogens..


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