|| List of recent Silicon-related patents
|Wearable device for a user|
The wearable device for sensing a body status is placed on the user. The wearable device includes a flexible printed circuit board and a semi-cured sheet encapsulatingly conforms to the shape of the flexible printed circuit board.
|Rubber composition and pneumatic tire|
To produce a copolymer, and reacting a compound containing a nitrogen atom and/or a silicon atom with an active terminal of the copolymer, wherein the rubber composition includes the conjugated diene polymer in an amount of not less than 10% by mass per 100% by mass of a rubber component of the rubber composition, and the silica in an amount of 10-70 parts by mass per 100 parts by mass of the rubber component.. .
|Curing-type coating-agent composition|
A curing-type coating-agent composition according to the present invention contains: component (a) (e.g., an isocyanuric ring-containing urethane (meth)acrylate compound) in an amount of from 20 to 80 parts by mass; component (b) (e.g., an isocyanuricring-containing tri(meth)acrylate compound free from any urethane bond) in an amount of from 10 to 70 parts by mass; component (c-1) (e.g., a reaction compound between a colloidal silica and an alkoxysilane compound having a maleimide group) in amount of from 1 to 35 parts by mass, or component (c-2) (e.g., a specific organosilicon compound) in an amount of from 5 to 35 parts by mass; a radical-polymerization initiator serving as component (d) in an amount of from 0.1 to 10 parts by mass; an ultraviolet absorber serving as component (e) in an amount of from 1 to 12 parts by mass; and an organic solvent serving as component (f) in an amount of from 10 to 1,000 parts by mass; with respect to a sum of the component (a), the component (b), and the component (c-1) or the component (c-2) being taken as 100 parts by mass. The aforementioned composition demonstrates excellent wear resistance and weatherability as a coating agent for plastic substrate, or the like, which is employed outside..
|Porous carbon-heteroatom-silicon inorganic/organic materials for chromatographic separations and process for the preparation thereof|
The present invention provides porous carbon-heteroatom-silicon inorganic/organic homogenous copolymeric hybrid materials, methods for their preparation, and uses thereof, e.g., as chromatographic separations materials.. .
|Post procedure skin care gel and methods of use thereof|
Compositions and methods are provided for a post-procedure care following the treatment of skin with cosmetic skin resurfacing treatments, which include without limitation a variety of laser treatments, chemical peeling and dermabrasion, by applying a silicone-based gel formulation in combination with therapeutic peptides. Peptides of interest include one or more of transforming growth factor, epidermal growth factor, and basic fibroblast growth factor.
|Aqueous surface-treating agent|
(where r1 and r2 each are an alkyl group having 1 to 4 carbon atoms, and n and m are 1≦n≦3 and m=3−n, respectively), and/or a hydrolyzate thereof; wherein 100 parts by weight or more of the polyurethane resin in terms of the weight of solid matters is used on the basis of 100 parts by weight in terms of nonvolatile matters of silicone oil, can prevent sticking of rubber seal materials such as o rings, etc. Themselves or sticking to a metal, a resin, etc., and can reduce the friction of rubber or resin seal members at the time of sliding motion..
|Paraffinic oil and class b gibberellin biosynthesis inhibitor compositions|
This disclosure features combinations that include a paraffinic oil and a class b gibberellin biosynthesis inhibitor. The combinations can further include (but are not limited to) one or more of the following: one or more emulsifiers, one or more pigments, one or more silicone surfactants, one or more anti-settling agents, and water.
|Grinding tool for machining brittle materials and a method of making a grinding tool|
The invention relates to a grinding tool for machining brittle materials. The grinding tool has a core and an abrasive rim.
|Resin composition, prepreg, and laminate|
A resin composition contains a cyanate ester compound, a maleimide compound, an epoxy resin, a silicone rubber powder, and an inorganic filler. The cyanate ester compound contains a compound represented by the following formula.
|Laser-based materials processing apparatus, method and applications|
In a particular embodiment, a relatively high-energy thulium fiber laser operating at the wavelength λ=2 μm may be used to selectively modify a front and/or a back surface of silicon and gallium arsenide wafers. The processing regime was studied in terms of the process parameters variation, and the corresponding modification fluence thresholds were determined.
|Remote plasma radical treatment of silicon oxide|
Embodiments described herein generally relate to methods for manufacturing flash memory devices. In one embodiment, the method includes generating a plasma comprising nitrogen-containing radicals in a remote plasma applicator, flowing the plasma comprising nitrogen-containing radicals into a processing region of the processing chamber where a semiconductor device is disposed, wherein the semiconductor device has a substrate comprising an oxide layer formed thereon, exposing an exposed surface of the oxide layer to the nitrogen-containing radicals, and incorporating nitrogen in the exposed surface of the oxide layer of the substrate..
|Method for manufacturing small-size fin-shaped structure|
A method for manufacturing a small-size fin-shaped structure, comprising: forming a first mask layer and a second mask layer on a substrate in sequence; etching the first mask layer and the second mask layer to form a hard mask pattern, wherein a second mask layer pattern is wider than a first mask layer pattern; eliminating the second mask layer pattern; and performing a dry etching of the substrate by taking the first mask layer pattern as a mask, so as to form a fin-shaped structure. According to the method for manufacturing a small-size fin-shaped structure of the present invention, firstly a large-size hard mask is prepared, then a width controllable small-size hard mask is prepared through a wet corrosion, and finally the bulk silicon wafer is etched, so as to obtain the required small-size fin-shaped structure, thereby improving the electrical properties and the integration level of the device, simplifying the processes and reducing the cost..
|Method of forming a through-silicon via utilizing a metal contact pad in a back-end-of-line wiring level to fill the through-silicon via|
A method for fabricating through-silicon vias (tsvs) for semiconductor devices is provided. Specifically, the method involves utilizing copper contact pads in a back-end-of-line wiring level, wherein the copper contact pads act as cathodes for performing an electroplating technique to fill tsvs with plated-conductive material (e.g., copper) from an electroplating solution.
|Semiconductor device and method for fabricating the same|
A method of fabricating a semiconductor device includes forming a first gate pattern and a dummy gate pattern on a first active area and a second active area of a substrate, respectively, the first gate pattern including a first gate insulating layer and a silicon gate electrode, removing the dummy gate pattern to expose a surface of the substrate in the second active area, forming a second gate pattern including a second gate insulating layer and a metal gate electrode on the exposed surface of the substrate, the first gate insulating layer having a thickness larger than a thickness of the second gate insulating layer, and forming a gate silicide on the silicon gate electrode after forming the second gate pattern.. .
|Workpiece cutting method|
Fractures (17a, 17b) are generated from modified regions (7a, 7b) to front and rear faces (12a, 12b) of a object to be processed (1), respectively, while an unmodified region (2) is interposed between the modified regions (7a, 7b). This can prevent fractures from continuously advancing in the thickness direction of a silicon substrate (12) when forming a plurality of rows of modified regions (7).
|Methods of fabricating semiconductor device having shallow trench isolation (sti)|
Methods of fabricating a semiconductor device include forming a field trench in a silicon substrate, forming a first oxide layer in the field trench, forming a first thinned oxide layer by partially removing a surface of the first oxide layer, and forming a first nitride layer on the first thinned oxide layer.. .
|Finfet/tri-gate channel doping for multiple threshold voltage tuning|
An embodiment method of controlling threshold voltages in a fin field effect transistor (finfet) includes forming a dummy gate over a central portion of a fin, the central portion of the fin disposed between exterior portions of the fin unprotected by the dummy gate, removing the exterior portions of the fin and replacing the exterior portions of the fin with an epitaxially-grown silicon-containing material, applying a spin-on resist over the dummy gate and the epitaxially-grown silicon-containing material and then removing the spin-on resist over the hard mask of the dummy gate, etching away the hard mask and a polysilicon of the dummy gate to expose a gate oxide of the dummy gate, the gate oxide disposed over the central portion of the fin, and implanting ions into the central portion of the fin through the gate oxide disposed over the central portion of the fin.. .
|Using interrupted through-silicon-vias in integrated circuits adapted for stacking|
In an integrated circuit (ic) adapted for use in a stack of interconnected ics, interrupted through-silicon-vias (tsvs) are provided in addition to uninterrupted tsvs. The interrupted tsvs provide signal paths other than common parallel paths between the ics of the stack.
|Thermal fluid flow sensor and method of manufacturing the same|
In a thermal sensor with a detection part and a circuit part formed on the same substrate, an insulating film for protection of the circuit part causes problems of lowering in sensitivity of a heater, deterioration in accuracy due to variation of a residual stress in the detection part, etc. A layered film including insulating films is formed on a heating resistor, an intermediate layer is formed thereon, and a layered film including insulating films is formed further thereon.
|Silicon-containing antireflective coatings including non-polymeric silsesquioxanes|
Embodiments include a silicon-containing antireflective material including a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an siox background, where x ranges from approximately 1 to approximately 2.
|Composite silicon or composite tin particles|
The specification relates to a composite particle for storing lithium. The composite particle is used in an electrochemical cell.
|Nanoparticles, compositions, manufacture and applications|
There are disclosed energetic nanoparticle compositions and materials containing silicon and other energetic elements, and methods of manufacturing the same, including reacting silicon nanoparticles and unsaturated alkene or alkyne to form covalently bonded surface coatings passivated against surface oxidation, for combination with a fuel, explosive or oxidizer.. .
|Quenched and partitioned high-carbon steel wire|
A high-carbon steel wire has as steel composition: a carbon content ranging from 0.40 weight percent to 0.85 weight percent, a silicon content ranging from 1.0 weight percent to 2.0 weight percent, a manganese content ranging from 0.40 weight percent to 1.0 weight percent, and a chromium content ranging from 0.0 weight percent to 1.0 weight percent. The remainder is iron.
|Deposition of silicon oxide by atmospheric pressure chemical vapor deposition|
The invention provides methods for forming silicon oxide-containing layer(s) on a substrate, such as glass, by heating a substrate, vaporizing at least one precursor comprising a monoalkylsilane having an alkyl group with greater than two carbon atoms to form a vaporized precursor stream, and contacting a surface of the heated substrate with the vaporized precursor stream at about atmospheric pressure to deposit one or more layers comprising silicon oxide onto the surface of the substrate. The invention is particularly useful for applying an anti-iridescent coating to glass in an online float glass process..
|Biomimetic dry adhesives and methods of production therefor|
The effectiveness of biomimetic dry adhesives at different ambient pressures is investigated. Biomimetic dry adhesives have great potential for space applications but there have been few studies on how these adhesives perform in low-pressure environments.
|Self adhesive film and method to minimize or eliminate print defects in such film|
The present invention relates to a self adhesive ink jet printable polymer film. The film comprises a polymeric resin and a low surface energy additive that is in a substantially free form.
|Accommodating intraocular lens|
Systems, devices, and methods are presented for a prosthetic injectable intraocular lens. The lenses can be made from silicone, fluorosilicone, and phenyl substituted silicone and be semipermeable to air.
|Method of protecting transparent nonmetallic electroconductive parts|
A method of protecting a transparent nonmetallic electroconductive part formed by, e.g., ito, on a transparent substrate, e.g., a glass substrate, from electrochemical corrosion, is characterized by coating the transparent nonmetallic electroconductive part with a room-temperature-curable silicone rubber composition that contains from 1 weight-ppm to 30 weight % of a triazole compound, e.g., a 1,2,4-triazole compound or a benzotriazole compound; and thereafter curing the composition.. .
|Piezoelectric device and method for manufacturing piezoelectric device|
In a method for manufacturing a piezoelectric device, a silicon oxide film is deposited by sputtering on a surface of a single-crystal piezoelectric substrate closer to an ion-implanted region, and a silicon nitride film is deposited by sputtering on a surface of the dielectric film opposite to a side thereof closer to the single-crystal piezoelectric substrate. The silicon oxide film has a composition that is deficient in oxygen relative to the stoichiometric composition.
|Cosmetic compositions for deeper ethnic skin tones|
Disclosed herein are cosmetic compositions comprising, in a cosmetically acceptable medium, (1) at least one silicone elastomer blend, (2) at least one film-forming polymer chosen from polyalkylsilsesquioxane resins, (3) at least one siloxane resin, (4) at least one polymeric filler, and (5) at least one mineral filler. Also disclosed herein are methods for making up and/or enhancing the appearance of a keratinous substrate, such as the skin, comprising applying said compositions to the keratinous substrate..
|Particles formed of silica and carbon, and method for producing mixture of silica and carbon|
A particle formed of silica and carbon having a low impurity content and an excellent reactivity is provided. Also provided is a method of producing a silica and carbon-containing material including: (b) a carbon mixing step of mixing an aqueous alkali silicate solution having a silicon concentration within the liquid portion of at least 10 wt % with carbon so as to obtain a carbon-containing aqueous alkali silicate solution; and (c) a silica recovery step of mixing the carbon-containing aqueous alkali silicate solution with a mineral acid so as to cause carbon and silicon within the liquid portion to precipitate as particles formed of silica and carbon and thus obtaining a particle-containing liquid substance, then solid-liquid separating the liquid substance so as to obtain a solid portion of a silica and carbon-containing material which is an assembly of particles formed of silica and carbon and a liquid portion containing impurities..
|Iron-based alloy for powder injection molding|
A ferrous alloy for powder injection molding is provided. The ferrous alloy for powder injection molding includes iron (fe) at 52.59-78.15 wt %, chromium (cr) at 16.45-37.34 wt %, boron (b) at 3.42-7.76 wt %, silicon (si) at 1.64-1.92 wt %, sulfur (s) at 0-0.21 wt %, carbon (c) at 0.16-0.18 wt %, and other inevitable impurities..
|Stainless steel alloys, turbocharger turbine housings formed from the stainless steel alloys, and methods for manufacturing the same|
Disclosed is an austenitic stainless steel alloy that includes, by weight, about 16% to about 21% chromium, about 4.5% to about 5.5% nickel, about 2% to about 5% manganese, about 1% to about 2% silicon, about 0.8% to about 1.2% tungsten, about 0.4% to about 0.8% molybdenum, about 0.4% to about 0.6% niobium, about 0.4% to about 0.5% carbon, and a balance of iron. The alloy is suitable for use in turbocharger turbine housing applications for temperature up to about 1020° c..
|Iii-v photonic crystal microlaser bonded on silicon-on-insulator|
Novel methods and systems for miniaturized lasers are described. A photonic crystal is bonded to a silicon-on-insulator wafer.
|Weak keeper circuit for memory device|
A memory circuit is provided comprising a plurality of bit cells coupled to a bit line that permits accessing information from each of the plurality of bit cells. A sense inverter is coupled to an output of the bit line.
|Wiring board and light emitting device|
There is provided a wiring board. The wiring board includes: a first insulating layer; a plurality of wiring patterns on the first insulating layer so as to be spaced apart from each other; a plating layer on at least one of the wiring patterns; a second insulating layer containing silicone therein and having an opening, wherein an outermost surface of the plating layer is exposed from the opening and serves as a connection pad; and a silica film on the outermost surface of the plating layer..
|Electrostatic discharge protection|
A chip includes a first die, a second die, a first and a second through-silicon vias, a first protection circuit, and a second protection circuit. The first die has a first operational voltage node and a first reference voltage node.
|Silicone contact lens and method for manufacturing thereof|
A contact lens and a method for manufacturing thereof are provided. The contact lens has a silicone contact lens base material and an amorphous carbon film formed in the silicone contact lens base material.
|Vertically aligned nematic mode liquid crystal display having large tilt angles and high contrast|
A reflective liquid crystal on silicon (lcos) display comprises a transparent substrate, a reflective substrate, and liquid crystal fluid between the substrates. The lcos display further comprises a matrix of pixels, arranged in a plurality of rows and columns, wherein an intersection of a row and a column defines a position of a pixel in the matrix.
|In substrate coupled inductor structure|
Some novel features pertain to an in-substrate inductor structure that includes a first inductor winding, a second inductor winding and a substrate. The first inductor winding includes an electrically conductive material.
|Non-invasive pre-bond tsv test using ring oscillators and multiple voltage levels|
A design for test (dft) architecture is provided that enables pre-bond parametric testing of through-silicon vias (tsvs). A grouping of n number of input/output (i/o) segments are configured to receive a test signal in a feedback loop, where each i/o segment includes one or more buffers (or inverters) and a tsv connected at one end to the one or more buffers.
|Isolation structure for stacked dies|
An isolation structure for stacked dies is provided. A through-silicon via is formed in a semiconductor substrate.
An electrical contact includes a substrate, at least an insulation layer, a metal layer, a conductive layer, and a metal silicide layer. The substrate includes at least a silicon region.
|Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry|
In accordance with the invention, an improved image sensor comprises an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques.
|Source and body contact structure for trench-dmos devices using polysilicon|
A semiconductor device includes a gate electrode, a top source region disposed next to the gate electrode, a drain region disposed below the bottom of the gate electrode, a oxide disposed on top of the source region and the gate electrode, and a doped polysilicon spacer disposed along a sidewall of the source region and a sidewall of the oxide. Methods for manufacturing such device are also disclosed.
|Electronic device including a nonvolatile memory structure having an antifuse component|
An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include a substrate, an access transistor, a read transistor, and an antifuse component. Each of the access and read transistors can include source/drain regions at least partly within the substrate, a gate dielectric layer overlying the substrate, and a gate electrode overlying the gate dielectric layer.
|Semiconductor constructions, dram arrays, and methods of forming semiconductor constructions|
The invention includes methods for utilizing partial silicon-on-insulator (soi) technology in combination with fin field effect transistor (finfet) technology to form transistors particularly suitable for utilization in dynamic random access memory (dram) arrays. The invention also includes dram arrays having low rates of refresh.
|Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer|
An soi wafer contains a compressively stressed buried insulator structure. In one example, the stressed buried insulator (box) may be formed on a host wafer by forming silicon oxide, silicon nitride and silicon oxide layers so that the silicon nitride layer is compressively stressed.
|Methods and apparatus for esd protection circuits|
Methods and apparatus are disclosed for esd protection circuits. An esd protection circuit may comprise a lateral silicon controlled rectifier (scr) circuit and a lateral pnp bipolar junction transistor (bjt) circuit.
|Reo/alo/aln template for iii-n material growth on silicon|
A iii-n template formed on a silicon substrate includes a distributed bragg reflector positioned on the silicon substrate. The distributed bragg reflector is substantially crystal lattice matched to the surface of the silicon substrate.
|Thin film transistor with increased doping regions|
A transistor that may be used in electronic displays to selectively activate one or more pixels. The transistor includes a metal layer, a silicon layer deposited on at least a portion of the metal layer, the silicon layer includes an extension portion that extends a distance past the metal layer, and at least three lightly doped regions positioned in the silicon layer.
|Deuterated film encapsulation of nonvolatile charge trap memory device|
Nonvolatile charge trap memory devices with deuterium passivation of charge traps and methods of forming the same are described. In one embodiment, the device includes a channel formed from a semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device.
|Tensile polycrystalline silicon film having stable resistivity and method of fabricating thereof|
Tensile polycrystalline silicon films having improved resistivity and less variability or more stable resistivity in finished semiconductors are provided. The methods of manufacturing such polycrystalline silicon films include application of protective film or film layer prior to annealing the semiconductor.
The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved.
An object of the invention is to improve the accuracy of light detection in a photosensor, and to increase the light-receiving area of the photosensor. The photosensor includes: a light-receiving element which converts light into an electric signal; a first transistor which transfers the electric signal; and a second transistor which amplifies the electric signal.
|Resistive switching device for a non-volatile memory device|
A method for forming a non-volatile memory device configured with a resistive switching element includes providing a substrate having a surface region, depositing a first dielectric material overlying the surface region, forming a first wiring structure overlying the first dielectric material, forming a contact layer of doped polycrystalline silicon containing material overlying the first wiring structure, forming a switching layer of resistive switching material over the contact layer, removing native oxide formed on a top surface of the switching layer, if any, depositing a metal layer of an active metal directly upon the top surface of the switching layer, and depositing a second wiring structure overlying the metal layer, wherein the top surface of the switching layer is cleaned of the native oxide, if any, to reduce agglomeration of the active metal.. .
|Method of controlling the crystallinity of a silicon powder|
A method of controlling the crystallinity of a silicon powder may include heating a reactor to a temperature of no more than 650° c., and flowing a feed gas comprising silane and a carrier gas into the reactor at a molar gas flux of from about 5 mol/min/m2 to about 25 mol/min/m2. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon.
|Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials|
Methods are presented for separating the effects of background doping density and effective minority carrier lifetime on photoluminescence (pl) generated from semiconductor materials. In one embodiment the background doping density is measured by another technique, enabling pl measurements to be analysed in terms of effective minority carrier lifetime.
|Three-dimensional baking mould for producing baked goods|
A three-dimensional baking mould (1) for producing baked goods, has a first negative mould part (2) and a second negative mould part (3), which form the baking mould (1) when fastened to each other. The two mould parts (2, 3) form a cavity (4), into which dough can be introduced through a receiving opening (5), which is partially formed by each of the two mould parts (2, 3).
|Filter device and analysis device using same|
A filter device of the present disclosure includes at least a sheet-shaped fiber structure having a plurality of fibers made of amorphous silicon dioxide, wherein the plurality of fibers are tangled and thus connected together to form voids in the sheet-shaped fiber structure. A filter device of the present disclosure corresponds to an analysis device including: a substrate; a flow path formed on the substrate; and a sheet-shaped fiber structure provided on the inner wall of the flow path, wherein the sheet-shaped fiber structure includes a plurality of fibers made of amorphous silicon dioxide, and the plurality of fibers are tangled and thus connected together to form voids in the sheet-shaped fiber structure..
|Propofol formulations with non-reactive container closures|
A container storing an anesthetic is disclosed. The container is sealed by a closure and stores a liquid anesthetic solution.
|Propofol formulations with non-reactive container closures|
A container storing an anesthetic is disclosed. The container is sealed by a closure and stores a liquid anesthetic solution.
|Laminated film and electronic device|
Wherein q1 represents a silicon atom that is bonded to one neutral oxygen atom and three hydroxyl groups, q2 represents a silicon atom that is bonded to two neutral oxygen atoms and two hydroxyl groups, q3 represents a silicon atom that is bonded to three neutral oxygen atoms and one hydroxyl group, and q4 represents a silicon atom that is bonded to four neutral oxygen atoms.. .
|Trench process and structure for backside contact solar cells with polysilicon doped regions|
A solar cell includes polysilicon p-type and n-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the p-type doped region from the n-type doped region.
|Silicon solar cell structure|
A silicon solar cell structure includes a silicon substrate, a phosphorus diffusion doping layer within a surface of the silicon substrate, a passivation layer on the surface of the silicon substrate, a phosphorous-containing oxide layer between the passivation layer and the phosphorus diffusion doping layer within the silicon substrate, and an electrode on the surface of the silicon substrate through the passivation layer and the phosphorous-containing oxide layer.. .
|Method for producing concentrating solar cell module and concentrating solar cell module|
A method for producing a concentrating solar cell module having the steps of: preparing a base portion having a plurality of mounting regions for mounting solar cells and a plurality of lead electrodes for electrically connecting the solar cells with external electrodes, and a support composed of a thermosetting resin, the support surrounding each of the mounting regions of the base portion; mounting the solar cells on the mounting regions; molding a condensing lens above the mounting regions so as to encapsulate the solar cells, plating a surface of the mounting regions of the prepared base portion after the preparing step and before the mounting step; and joining the support to the base portion after the mounting step and before the molding step, wherein in the molding step, the condensing lens is molded with a transparent thermosetting silicone resin.. .
|Cement compositions containing nano sized boehmite crystallites|
A composition comprising cement and nano-sized crystalline particles of boehmite alumina or nano-sized crystalline particles of boehmite alumina which have been modified by the inclusion of silicon oxide, calcium oxide, or magnesium oxide. The boehmite alumina has an average crystallite size from about 2 nm to about 80 nm and a content of non-crystalline alumina of less than about 25 mol percent based on total aluminum..
|Gel handle pliers for beading|
Beading pliers, having a pair of engageable jaws pivotable about a journal cylinder, are provided with handles. Each handle has an outwardly curving handle core surrounded by a silicone gel filled retention tube encompassed by a cover tube comprising silicone rubber having a thickness of between about 3 and about 7 mm, the end of each pliable cover tube space from the journal being closed.
|Multidimensional strain gage|
A strain sensor is provided having an annular collar. At least one sensor is movably coupled to the collar, the at least one sensor having a body with a plurality of silicon strain gages coupled thereto.
|Piezoelectric sensors and sensor arrays for the measurement of wave parameters in a fluid, and method of manufacturing therefor|
The present disclosure relates to piezoelectric sensors and piezoelectric sensor arrays, to methods of manufacturing therefor, and to a method of measuring characteristics of a mechanical wave using a piezoelectric sensor array. A piezoelectric sensor is formed of a silicon substrate on which an electrical barrier is added.