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|| List of recent Silicon-related patents
| X-tracer: a reconfigurable x-tolerance trace compressor for silicon debug|
An apparatus and method for compressing trace data containing unknown (x) bits in trace-based silicon debug, wherein redundant and/or reconfigurable misrs and a non-x signature extraction algorithm are used to produce non-x signature that contains a maximized number of known (non-x) information bits.. .
| Optimized process for upgrading bio-oils of aromatic bases|
A process for preparing aromatic compounds from a liquid biofuel feedstock by introducing the feedstock into a hydroreforming stage in the presence of hydrogen and a hydroreforming catalyst that contains a transition metal of a group 3 to 12 element and an activated carbon, silicon carbide, silica, transition alumina, alumina-silica, zirconium oxide, cerium oxide, titanium oxide, or an aluminate of a transition metal substrate, to obtain a liquid effluent that contains an aqueous phase and an organic phase, a stage for hydrotreatment of the organic phase, a hydrocracking stage, recycling a fraction that boils higher than 160° c. In said hydrocracking stage, a separation into a fraction containing naphtha and a fraction that boils higher than 160° c., a stage for catalytic reforming of the fraction containing naphtha to obtain hydrogen and a reformate that contains aromatic compounds and a stage for separation of the aromatic compounds of the reformate..
| Method for converting a hydrocarbonaceous material to a fluid hydrocarbon product comprising p-xylene|
The invention relates to a method for producing a fluid hydrocarbon product, and more specifically, to a method for producing a fluid hydrocarbon product via catalytic pyrolysis. The reactants comprise hydrocarbonaceous materials (e.g., biomass).
| Nylon compositions for forming cast nylon and cast nylon parts|
A composition for forming a cast nylon part comprising a base caprolactam mixture and at least one of a first additive comprising acetylene carbon black; a second additive comprising at least one of nonyl phenol ethoxylate, silicon oil, and at least one nonionic surfactant having a viscosity similar to that of nonyl phenol ethoxylate; a third additive comprising silicon dioxide; and a fourth additive comprising intercalated expandable graphite.. .
| Integrated molded product|
Provided is an integrated molded product in which a molded resin product containing a phosphorus compound is used and an addition-reactive silicone adhesive agent is used to achieve strong bonding. The integrated molded product comprises a thermoplastic resin molded product made of a thermoplastic resin composition comprising a polybutylene terephthalate resin and a phosphorus compound, the content of the phosphorus compound being 0.5% by mass or less; an addition-reactive silicone composition; and a member; and the thermoplastic resin molded product and the addition-reactive silicone composition are brought into contact with each other.
| Porous alumina material, process for producing same, and catalyst|
Provided is a production method for a porous alumina material, comprising the steps of: mixing an alkoxysilane solution that comprises an alkoxysilane, a mixed solvent comprising water and an alcohol, and an inorganic acid, with an aluminum solution comprising an aluminum compound and water, to prepare a mixed solution in which the aluminum compound and the alkoxysilane are dissolved in the mixed solvent; co-precipitating aluminum hydroxide with a silicon compound in the mixed solution, to form a precipitate; and baking the precipitate to form a porous alumina material comprising aluminum oxide and silicon oxide.. .
| Polishing composition|
Provided is a polishing composition containing at least aluminum oxide abrasive grains and water, and having a ph of 8.5 or higher. The aluminum oxide abrasive grains have a specific surface area of 20 m2/g or less.
The present invention provides a socket, which includes an insulation housing, conductive silicone rubber received in the insulation housing, and a conductive plate mounted to the insulation housing. The conductive plate has an end electrically connected to the conductive silicone rubber and an opposite end extending outside the insulation housing for external electrical connection.
| Composite material, method of producing the same, and apparatus for producing the same|
Proposed are a composite material having a high adhesiveness, wherein non-penetrating pores that are formed in a silicone surface layer are filled up with a metal or the like without leaving any voids by using the plating technique and the silicone surface layer is coated with the metal or the like, and a method of producing the composite material. A composite material, which has a high adhesiveness between a second metal or an alloy of the second metal (106a, 106b) and a silicone surface, can be obtained by filling up non-penetrating pores that are formed in the surface of a silicone substrate (100) substantially with a second metal or an alloy of the second metal (106a) with the use of the autocatalytic electroless plating technique wherein a first metal located at the bottom of the non-penetrating pores as described above serves as the starting point, and coating the surface of the silicone substrate (100) with the second metal (106b)..
| Method and apparatus for forming silicon film|
A method of forming a silicon film includes a first film forming process, an etching process, a doping process, and a second film forming process. In the first film forming process, a silicon film doped with impurities containing boron is formed so as to embed a groove provided on an object to be processed.
| Methods for depositing amorphous silicon|
Methods for depositing an amorphous silicon layer on wafers are disclosed. A process wafer, a control wafer, and a dummy wafer may be loaded into a chamber where an amorphous silicon layer may be deposited on the process wafer.
| Method for forming insulating film|
[means for solving] a substrate surface is coated with a silicon dioxide dispersion containing silicon dioxide fine particles, a polymer, a surfactant and a dispersion medium; and then further coated with a polysilazane composition; and thereafter heated to form an insulating film.. .
| Process for fabricating an integrated circuit having trench isolations with different depths|
A process for fabricating an integrated circuit includes, in a stack of layers including a silicon substrate overlaid with a buried insulating layer overlaid with a silicon layer, etching first trenches into the silicon substrate, depositing a silicon nitride layer on the silicon layer to fill the first trenches and form first trench isolations, forming a mask on the silicon nitride layer, etching second trenches into the silicon substrate, in a pattern defined by the mask, to a depth greater than a depth of the first trenches, filling the second trenches with an electrical insulator to form second trench isolations, carrying out a chemical etch until the silicon layer is exposed, and forming a fet by forming a channel, a source, and a drain of the field effect transistor in the silicon layer.. .
| Transistor and method for forming the same|
The present invention relates to a transistor and the method for forming the same. The transistor of the present invention comprises a semiconductor substrate; a gate dielectric layer formed on the semiconductor substrate; a gate formed on the gate dielectric layer; a source region and a drain region located in the semiconductor substrate and on respective sides of the gate, wherein at least one of the source region and the drain region comprises at least one dislocation; an epitaxial semiconductor layer containing silicon located on the source region and the drain region; and a metal silicide layer on the epitaxial semiconductor layer..
| Methods for forming mos devices with raised source/drain regions|
A method includes forming a first gate stack of a first device over a semiconductor substrate, and forming a second gate stack of a second mos device over the semiconductor substrate. A first epitaxy is performed to form a source/drain stressor for the second mos device, wherein the source/drain stressor is adjacent to the second gate stack.
| Device with through-silicon via (tsv) and method of forming the same|
A method includes forming an opening extending from a top surface of a silicon substrate into the silicon substrate to a predetermined depth. The method further includes forming an insulation structure on the silicon substrate along the sidewalls and the bottom of the opening and forming a conductive layer on the insulation structure to fill the opening.
| Manufacture of solar cell module|
A solar cell module is manufactured by coating and curing a curable silicone gel composition onto one surface of each of two panels except a peripheral region to form a cured silicone gel coating, providing a seal member (3) on the peripheral region of one panel (1a), placing a solar cell component (4) on the cured silicone gel coating on one panel, placing the other panel (1b) on the one panel so that the seal member (3) abuts against the peripheral region of the other panel, and the solar cell component is sandwiched between the panels, and heat pressing the panels (1a, 1b) in vacuum for encapsulating the solar cell component (4).. .
| Method of fabricating patterned functional substrates|
Methods of preparing organosilane-functionalized regions on a substrate surface and more specifically fabricating patterned functionalized substrates suitable to be optically read, the methods generally comprising employing a vapor deposition process of an organosilane gas onto a lithographically patterned silicon surface followed by removal of the patterning media in a bath of organic solvents and ultrasonic excitation. The inventive methods provide optimized surface density of functional species while avoiding deleterious effects that can occur when lithographically patterned substrates are exposed to various gaseous species during the functionalization process..
| Silicified electrolyte material for fuel cell, method for its preparation and fuel cell using same|
This material suitable for constituting an electrolyte for a fuel cell has a hydrophobic matrix comprising carbon, fluorine, oxygen and hydrogen, and silicon.. .
| Method for the production of an lmo product|
A fused product including lithium-manganese spinel, which is optionally doped, having a spinel structure ab2o4, where the site a is occupied by lithium and the site b is occupied by manganese, it being possible for the site b to be doped with an element b′ and it being possible for the site a to exert a substoichiometry or a superstoichiometry with respect to the site b, so that the product observes the formula li(1+x)mn(2−y)b′yo4, with −0.20≦x≦0.4 and 0≦y≦1, the element b′ being chosen from aluminum, cobalt, nickel, chromium, iron, magnesium, titanium, vanadium, copper, zinc, gallium, calcium, niobium, yttrium, barium, silicon, boron, zirconium and their mixtures.. .
| Method of producing high purity siox nanoparticles with excellent volatility and apparatus for producing the same|
The present disclosure provides a method of producing high purity siox nanoparticles with excellent volatility and an apparatus for producing the same, which enables mass production of siox nanoparticles by melting silicon through induction heating and injecting gas to a surface of the molten silicon. The apparatus includes a vacuum chamber, a graphite crucible into which raw silicon is charged, the graphite crucible being mounted inside the vacuum chamber, an induction melting part which forms molten silicon by induction heating of the silicon material received in the graphite crucible, a gas injector which injects a gas into the graphite crucible to be brought into direct contact with a surface of the molten silicon, and a collector disposed above the graphite crucible and collecting siox vapor produced by reaction between the molten silicon and the injected gas..
| Sliding bearing composite material|
The invention relates to a sliding bearing composite material with a substrate layer made of steel, an intermediate layer which lies on the substrate layer, and a bearing metal layer which lies on the intermediate layer and which is made of an aluminum alloy that is free of lead apart from impurities. The aluminum alloy contains 10.5-14 wt.
| Metal foil with carrier and method for producing laminated substrate using same|
The present invention relates to a metal foil with a carrier (1, 21, 31) including a non-metallic plate-shaped carrier (2, 22, 32), a metal foil (3, 23, 33) laminated on at least one surface of the carrier (2, 22, 32), and a low-adhesion material (4) provided between the metal foil (3, 23, 33) and the carrier (2, 22, 32) to adhere to the metal foil (3, 23, 33) and made of a mixture of polyvinyl alcohol and silicone resin.. .
| Self-adhesive silicone compositions which can be crosslinked to form elastomers|
Self-adhesive crosslinkable silicone compositions may be transparent and prepared without conventional adhesion promoters, and contain (1) an organopolysiloxane having a minimum of two aliphatically unsaturated carbon-carbon bond-containing groups, (2) a pendant si—h functional organopolysiloxane having at least 3 si—h groups and a minimum of 0.7 weight percent of si-bonded hydrogen, and (3) a linear organopolysiloxane bearing terminal si—h groups, wherein the mol ratio of silicon-bonded hydrogen in (2) to that in [(2) and (3)] is from 0.05 to 1.. .
| Monomer systems with dispersed silicone-based engineered particles|
Provided are compositions containing engineered particles, and methods of making such engineered particles. Polymeric articles, such as contact lenses, prepared from such compositions are also provided.
| Silicon single crystal wafer|
The present invention provides a silicon single crystal wafer sliced out from a silicon single crystal ingot grown by a czochralski method, wherein the silicon single crystal wafer is sliced out from the silicon single crystal ingot having oxygen concentration of 8×1017 atoms/cm3 (astm' 79) or less and includes of a defect region where neither fpds nor leps are detected by preferential etching but lstds are detected by an infrared scattering method. As a result, the wafer having the low oxygen concentration can be provided at low cost without causing a breakdown voltage failure or a leak failure at the time of fabricating a device..
| Readily sinterable silicon carbide powder and silicon carbide ceramic sintered body|
Provided are: a readily sinterable silicon carbide powder substantially having a stoichiometric composition and from which a dense sintered body can be obtained; a silicon carbide ceramic sintered body having a low specific resistance; and a production method thereof. This readily sinterable silicon carbide powder has a carbon/silicon elemental ratio of 0.96 to 1.04, an average particle diameter of 1.0 to 100 μm, and a ratio of 20% or less of an integrated value of an absorption intensity in a chemical shift range of 0 to 30 ppm to an integrated value of an absorption intensity in a chemical shift range of 0 to 170 ppm, in a 13c-nmr spectrum.
| Integrated co2 phase changing absorbent for co2 separation system|
A method and system for removing carbon dioxide from a power plant exhaust (such as a power plant, coal boilers, natural gas combined cycle plants or a gas turbine engine exhaust), where the method includes the steps of contacting the exhaust gas with a lean amino-silicone absorbent in an absorber, with the absorbent being sufficient in amount and concentration to react with a substantial portion of the carbon dioxide present in the exhaust gas; forming a liquid/solids slurry comprising unreacted amino-silicone absorbent and solid carbamates resulting from the reaction of the absorbent with carbon dioxide; heating the slurry in a desorber to a temperature sufficient to effectively strip the carbon dioxide from the carbamates; regenerating lean amino-silicone absorbent as a recycle stream back to the absorber; and sequestering the desorbed carbon dioxide gas.. .
| Nickel-chromium-iron-aluminum alloy having good processability|
The invention relates to a nickel-chromium-aluminum-iron alloy, comprising (in wt %) 12 to 28% chromium, 1.8 to 3.0% aluminum, 1.0 to 15% iron, 0.01 to 0.5% silicon, 0.005 to 0.5% manganese, 0.01 to 0.20% yttrium, 0.02 to 0.60% titanium, 0.01 to 0.2% zirconium, 0.0002 to 0.05% magnesium, 0.0001 to 0.05% calcium, 0.03 to 0.11% carbon, 0.003 to 0.05% nitrogen, 0.0005 to 0.008% boron, 0.0001 to 0.010% oxygen, 0.001 to 0.030% phosphorus, max. 0.010% sulfur, max.
| Nickel-chromium-molybdenum-vanadium alloy and turbine component|
A nicrmov alloy and a turbine component are disclosed. The nicrmov alloy includes at least about 0.06%, at least about 3.40% nickel, between about 0.22% and about 0.30% carbon, up to about 0.60% molybdenum, up to about 0.15% vanadium, up to about 2.00% chromium, up to about 0.012% phosphorus, up to about 0.007% sulfur, up to about 0.10% silicon, up to about 0.002% antimony, up to about 0.008% arsenic, up to about 0.012% tin, and up to about 0.015% aluminum and/or is resistant to embrittlement at temperatures above 700° f..
| Fixing member, fixing device, and image forming apparatus|
To provide a fixing member, which contains a base, and a polyorganosiloxane layer provided on the base, where the polyoranosiloxane layer contains polyoranosiloxane including a silicon atom bonded to three or four oxygen atoms, and wherein the fixing member is designed to be used in a process for heating a toner image on a recording medium to fix the toner image onto the recording medium.. .
| Method and structure providing optical isolation of a waveguide on a silicon-on-insulator substrate|
Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.. .
| Leakage and performance graded memory|
Embodiments of the present invention provide a memory configuration on a chip containing multiple memory segments having different memory grades. In a typical embodiment, a single chip will be provided on which the memory segments are positioned.
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