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Silicon-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Heater tube for molten metal immersion
Mitsui Mining & Smelting Co., Ltd.
June 14, 2018 - N°20180168004

A heater tube for molten metal immersion 1 has a cylindrical heater housing part 4 equipped with a closed end 2 and an open end 3, wherein the heater housing part 4 comprises silicon nitride, a compound comprising yttrium, and a compound comprising magnesium. The heater housing part 4 has a surface roughness ra of an outer circumferential surface of the heater housing part 4 is between 0.5 &#...
Sound absorbing material and manufacturing method thereof and speaker using sound absorbing material
Aac Technologies Pte. Ltd.
June 14, 2018 - N°20180167721

The present disclosure provides a sound absorbing material, a manufacturing method thereof and a speaker using the sound absorbing material. The speaker comprises a shell with a receiving space, a sound production unit disposed in the shell, and a rear cavity encircled by the sound production unit and the shell.
Data flow configuration in hybrid system of silicon and micro-electro-mechanical-switch (mems) elements
International Business Machines Corporation
June 14, 2018 - N°20180167310

Certain embodiments of the present disclosure provide a method for communicating data flows. The method generally includes receiving control flow information corresponding to a data flow for communication from a first device to a second device, and determining one or more characteristics of the data flow based on the control flow information.
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Compact 3d receiver architecture using silicon germanium thru silicon via technology
Gm Global Technology Operations Llc
June 14, 2018 - N°20180167095

A wide bandwidth radio system designed to adapt to various global radio standards and, more particularly, to a system and method incorporate a compact receiver array design to support the demand for increased mobile broadband services using a through-silicon vias to interconnect front-end analog functions in sige bicmos to backend circuitry in cmos.. .
Fully depleted silicon on insulator power amplifier
Globalfoundries Inc.
June 14, 2018 - N°20180167038

The present disclosure generally relates to semiconductor structures and, more particularly, to a fully depleted silicon on insulator power amplifier with unique biases and voltage standing wave ratio protection and methods of manufacture. The structure includes a pseudo-differential common source amplifier; first stage cascode devices connected to the pseudo-differential common source amplifier and protecting the pseudo-differential common source amplifier from ...
Protective structure of stator and fan using the same
Asia Vital Components Co., Ltd.
June 14, 2018 - N°20180166941

The present invention relates to a protective structure of a stator and a fan using the same. The protective structure of a stator comprises plural silicon steel sheets, at least one first filler, and a cover body.
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Microfabricated optical apparatus with grounded metal layer
Innovative Micro Technology
June 14, 2018 - N°20180166850

A microfabricated optical apparatus that includes a light source driven by a waveform, wherein the waveform is delivered to the light source by at least one through silicon via. The microfabricated optical apparatus may also include a light-sensitive receiver which generates an electrical signal in response to an optical signal.
Porous silicon-silicon oxide-carbon composite, and method of preparing the same
Korea Advanced Institute Of Science And Technology
June 14, 2018 - N°20180166685

The present invention relates to a porous silicon-silicon oxide-carbon composite comprising a silicon oxide-carbon structure and silicon particles, wherein the silicon oxide-carbon structure comprises a plurality of micropores, and the silicon particles are uniformly distributed in the silicon oxide-carbon structure. The porous silicon-silicon oxide-carbon composite of the present invention shows decreased volume expansion due to the intercalation of lithium ions ...
High capacity monolithic composite si/carbon fiber electrode architectures synthesized from low cost materials and ...
Ut-battelle, Llc
June 14, 2018 - N°20180166684

A composite si-carbon fiber comprising a carbon matrix material with 1-90 wt % silicon embedded therein. The composite carbon fibers are incorporated into electrodes for batteries.
Method of producing a housing cover, method of producing an optoelectronic component, and optoelectronic component
Osram Opto Semiconductors Gmbh
June 14, 2018 - N°20180166611

A method of producing a housing cover includes providing a cover blank having a mounting surface formed on an underside; connecting the underside of the cover blank to a silicon slice; creating at least one opening in the silicon slice to expose at least part of the mounting surface; arranging a base metallization on the exposed part of the mounting ...
Method of fabricating thin film photovoltaic devices
June 14, 2018 - N°20180166603

Thin film silicon photovoltaic cell arrangements that include a heavily doped p-type polycrystalline silicon layer spaced-apart from the substrate and bottom electrode in order to reduce grain defects by initiating crystallization at a location far from the substrate. This is accomplished by forming a device structure incorporating such amorphous silicon films on a substrate and annealing at elevated temperature to ...
High performance solar cells, arrays and manufacturing processes therefor
Mpower Technology, Inc.
June 14, 2018 - N°20180166598

High performance single crystal silicon cells and arrays thereof are manufactured using a rapid process flow. Tunneling junctions formed in the process provide performance benefits, such as higher efficiency and a lower power temperature coefficient.
Photoelectric conversion device, method of manufacturing the same, and camera
Canon Kabushiki Kaisha
June 14, 2018 - N°20180166591

A photoelectric conversion device has a silicon substrate which includes a first portion configured to perform photoelectric conversion, and a second portion which is arranged farther apart from a light receiving surface of the silicon substrate than the first portion and contains carbon. A first peak concentration as a carbon peak concentration in the second portion is not less than 1&#...
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  • 4172+ full patent PDF documents of Silicon-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Contact structure and extension formation for iii-v nfet
International Business Machines Corporation
June 14, 2018 - N°20180166561

Finfet devices including iii-v fin structures and silicon-based source/drain regions are formed on a semiconductor substrate. Silicon is diffused into the iii-v fin structures to form n-type junctions.
Cascode configured semiconductor component
Semiconductor Components Industries, Llc
June 14, 2018 - N°20180166557

In accordance with an embodiment, a cascode connected semiconductor component and a method for manufacturing the cascode connected semiconductor component are provided. The cascode connected semiconductor component has a pair of silicon based transistors, each having a body region, a gate region over the body region, a source region and a drain.
Silicon carbide vertical mosfet with polycrystalline silicon channel layer
Infineon Technologies Ag
June 14, 2018 - N°20180166555

A semiconductor device may include a semiconductor body of silicon carbide (sic) and a field effect transistor. The field effect transistor has the semiconductor body that includes a drift region.
Semiconductor device and manufacturing method
Renesas Electronics Corporation
June 14, 2018 - N°20180166554

A semiconductor device includes: a first conductivity type semiconductor substrate made of silicon carbide; a second conductivity type body region in a device region of the semiconductor substrate; a first conductivity type source region formed in the body region; and a gate electrode formed on the body region through gate insulating films. The semiconductor device further includes, in a termination ...
Semiconductor device and method of manufacturing the same
Kia Motors Corporation
June 14, 2018 - N°20180166541

A semiconductor device is provided. The semiconductor device includes a n− type layer disposed at a first surface of a n+ type silicon carbide substrate and a trench disposed at the n− type layer.
Semiconductor device and method manufacturing the same
Kia Motors Corporation
June 14, 2018 - N°20180166540

A semiconductor device may include an n− type layer disposed at a first surface of an n+ type silicon carbide substrate; a trench disposed at the n− type layer; a p type region, an n+ type region, and a p+ type region disposed at an upper portion in the n− type layer; a gate insulating layer disposed ...
Semiconductor device and method manufacturing the same
Kia Motors Corporation
June 14, 2018 - N°20180166539

A semiconductor device may include an n− type layer disposed at a first surface of an n+ type silicon carbide substrate; a p− type region, a p type region, an n+ type region, and a p+ type region disposed at an upper portion in the n− type layer; a gate electrode and a source electrode disposed on ...
Semiconductor device and method manufacturing the same
Kia Motors Corporation
June 14, 2018 - N°20180166538

A semiconductor device may include an n− type layer sequentially disposed at a first surface of an n+ type silicon carbide substrate; a p type region disposed in the n− type layer; an auxiliary n+ type region disposed on the p type region or in the p type region; an n+ type region disposed in the p type ...
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