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Silicon Nitride patents



      
           
This page is updated frequently with new Silicon Nitride-related patent applications. Subscribe to the Silicon Nitride RSS feed to automatically get the update: related Silicon RSS feeds. RSS updates for this page: Silicon Nitride RSS RSS


Piezoelectric device and method for manufacturing piezoelectric device

Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer

Date/App# patent app List of recent Silicon Nitride-related patents
08/14/14
20140227952
 Grinding tool for machining brittle materials and a method of making a grinding tool patent thumbnailGrinding tool for machining brittle materials and a method of making a grinding tool
The invention relates to a grinding tool for machining brittle materials. The grinding tool has a core and an abrasive rim.
08/14/14
20140227434
 Piezoelectric device and method for manufacturing piezoelectric device patent thumbnailPiezoelectric device and method for manufacturing piezoelectric device
In a method for manufacturing a piezoelectric device, a silicon oxide film is deposited by sputtering on a surface of a single-crystal piezoelectric substrate closer to an ion-implanted region, and a silicon nitride film is deposited by sputtering on a surface of the dielectric film opposite to a side thereof closer to the single-crystal piezoelectric substrate. The silicon oxide film has a composition that is deficient in oxygen relative to the stoichiometric composition.
08/14/14
20140225160
 Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer patent thumbnailStrained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer
An soi wafer contains a compressively stressed buried insulator structure. In one example, the stressed buried insulator (box) may be formed on a host wafer by forming silicon oxide, silicon nitride and silicon oxide layers so that the silicon nitride layer is compressively stressed.
08/07/14
20140220779
 Surface selective polishing compositions patent thumbnailSurface selective polishing compositions
The disclosure provides polishing compositions that show a high polishing rate ratio of a silicon nitride (sin) surface to a silicon oxide surface, and/or of a sin surface to a polycrystalline silicon (poly si) surface. Such compositions comprise, in certain aspects, of colloidal silica, and one or more water soluble polymers, and has a ph of 6 or less, wherein the colloidal silica comprises one or more organic acids bound to its surface, and the water soluble polymer is a polyoxyalkylene hydrocarbyl ether which hydrocarbyl moiety has 12 or more carbon atoms..
08/07/14
20140220407
 Method of manufacturing solid type secondary battery and solid type secondary battery based on the same patent thumbnailMethod of manufacturing solid type secondary battery and solid type secondary battery based on the same
A method of manufacturing a solid type secondary battery and a solid type secondary battery manufactured using the same, in which positive and negative electrodes include silicon carbide and silicon nitride, nonaqueous electrolyte includes ion exchange resin or ion exchange inorganic substance, the method including the steps of manufacturing a positive electrode print layer 2, a negative electrode print layer 3, and a nonaqueous electrolyte print layer 4 by mixing each pigment powder of 100 parts by weight for materials of the positive electrode layer, the negative electrode layer, and the nonaqueous electrolyte layer with water-soluble silicon resin of 1 to 50 parts by weight and water of 10 to 100 parts by weight; sequentially performing layered printing for each print layer; and drying the stack.. .
08/07/14
20140220302
 Silicon nitride substrate and method for producing silicon nitride substrate patent thumbnailSilicon nitride substrate and method for producing silicon nitride substrate
A silicon nitride substrate including a phase encompassed of silicon nitride particles, and intergranular phase formed from a sintering aid, wherein a separation layer is formed on the surface of a molded body including silicon nitride powder, sintering aid powder, and organic binder, by using a boron nitride paste containing boron nitride powder, organic binder, and organic solvent; the separation layer and molded body are heated; the organic binder is removed from the separation layer and molded body; subsequently molded bodies stacked with a separation layer therebetween, are sintered. Boron nitride paste contains 0.01 to 0.50% by oxygen mass and 0.001 to 0.5% by carbon mass, and c/a is within range of 0.02 to 10.00, where c is oxygen content in the powder of the boron nitride paste, and a carbon content in the degreased separation layer, which includes 0.2 to 3.5 mg/cm2 of hexagonal boron nitride powder..
08/07/14
20140220239
 Copper paste composition and its use in a method for forming copper conductors on substrates patent thumbnailCopper paste composition and its use in a method for forming copper conductors on substrates
This invention relates to a copper thick film paste composition paste comprising copper powder, a pb-free, bi-free and cd-free borosilicate glass frit, a component selected from the group consisting of ruthenium-based powder, copper oxide powder and mixtures thereof and an organic vehicle. The invention also provides methods of using the copper thick film paste composition to make a copper conductor on a substrate.
08/07/14
20140217485
 Stress engineered multi-layers for integration of cmos and si nanophotonics patent thumbnailStress engineered multi-layers for integration of cmos and si nanophotonics
A method of forming an integrated photonic semiconductor structure having a photonic device and a cmos device may include depositing a first silicon nitride layer having a first stress property over the photonic device, depositing an oxide layer having a stress property over the deposited first silicon nitride layer, and depositing a second silicon nitride layer having a second stress property over the oxide layer. The deposited first silicon nitride layer, the oxide layer, and the second silicon nitride layer encapsulate the photonic device..
07/31/14
20140211178
 Method for producing a capping layer composed of silicon oxide on an euv mirror, euv mirror, and euv lithography apparatus patent thumbnailMethod for producing a capping layer composed of silicon oxide on an euv mirror, euv mirror, and euv lithography apparatus
A method for producing a capping layer (18) composed of silicon oxide siox on a coating (16) of a mirror (13), the coating reflecting euv radiation (6) e.g. For use in an euv lithography apparatus or in an euv mask metrology system.
07/31/14
20140209877
 Tft substrate including barrier layer, organic light-emitting display device including the tft substrate, and method of manufacturinq the tft substrate patent thumbnailTft substrate including barrier layer, organic light-emitting display device including the tft substrate, and method of manufacturinq the tft substrate
A thin-film transistor (tft) substrate includes a flexible substrate. A first barrier layer is formed on the flexible substrate.
07/31/14
20140209851
Memory cell constructions, and methods for fabricating memory cell constructions
Some embodiments include methods for fabricating memory cell constructions. A memory cell may be formed to have a programmable material directly against a material having a different coefficient of expansion than the programmable material.
07/24/14
20140206195
Process for removing carbon material from substrates
A method of removing carbon materials, preferably amorphous carbon, from a substrate includes dispensing a liquid sulfuric acid composition including sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the carbon material coated substrate. The liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor.
07/24/14
20140206176
Method for low temperature bonding and bonded structure
A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and sio2.
07/24/14
20140206161
Method of fabricating a semiconductor device having a capping layer
A method of semiconductor device fabrication includes forming a first dummy gate structure in a first region of a semiconductor substrate and forming a second dummy gate structure in a second region of the semiconductor substrate. A protective layer (e.g., oxide and/or silicon nitride hard mask) is formed on the second dummy gate structure.
07/24/14
20140203407
Method for low temperature bonding and bonded structure
A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface polymerization to prevent a reverse polymerization reaction to allow room temperature chemical bonding of materials such as silicon, silicon nitride and sio2.
07/17/14
20140200131
Si3n4 insulator material for corona discharge igniter systems
A silicon nitride material is disclosed which has properties beneficial for efficient operation of a corona discharge igniter system in an internal combustion gas engine.. .
07/17/14
20140199851
Method of patterning a silicon nitride dielectric film
Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer.
07/17/14
20140199850
Dry-etch for selective oxidation removal
Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (h2).
07/17/14
20140199847
Semiconductor device manufacturing method
According to one embodiment, a semiconductor device manufacturing method includes depositing a silicon film above a semiconductor substrate, forming an insulating film which includes silicon oxide or silicon nitride on the silicon film, forming a physical guide having a depressed portion above the insulating film, forming a directed self-assembly material layer which includes a first polymer and a second polymer in the depressed portion of the physical guide, phase-separating the directed self-assembly material layer into a first region which includes the first polymer and a second region which includes the second polymer, removing the second region, processing the insulating film by using the physical guide and the first region as masks, and transferring a pattern corresponding to the second region to the insulating film. Further, the silicon film is processed by using the pattern transferred onto the insulating film as a mask..
07/17/14
20140199846
Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device is disclosed. The method may comprise: etching a plurality of first openings in an interlayer dielectric layer on a substrate; forming an opening modifying layer in the plurality of first openings; and etching the opening modifying layer until the substrate is exposed, resulting in a plurality of second openings, wherein the second openings have a depth-to-width ratio greater than that of the first openings.
07/17/14
20140197513
Image sensor with improved dark current performance
Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region.
07/17/14
20140197473
Nonvolatile semiconductor storage device and method of manufacturing the same
A nonvolatile semiconductor storage device includes a substrate; an isolation film extending in a first direction and dividing the substrate into element regions; a cell string including memory cells in the element regions; a cell unit including the cell string and a select transistor on first directional ends of the cell string; diffusion layers formed in a portion of the element region first directionally beside the select gate electrode, the diffusion layers being adjacent to one another in a second direction intersecting with the first direction; and contacts extending through an interlayer insulating film and contacting the diffusion layers. An upper surface of the isolation film located between the diffusion layers is lower than an upper surface of the substrate.
07/17/14
20140197460
Semiconductor device, method for manufacturing the same, power supply device, and high-frequency amplifier
A semiconductor device includes: a compound semiconductor stack structure including a plurality of compound semiconductor layers stacked over a semiconductor substrate; and a first insulating film covering the surface of the compound semiconductor stack structure, the first insulating film being a silicon nitride film including, on the top side, a first region containing nitrogen element in excess of the stoichiometric ratio.. .
07/17/14
20140197356
Cmp compositions and methods for suppressing polysilicon removal rates
The present invention provides a chemical-mechanical polishing (cmp) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof.
07/10/14
20140191231
Display device and method of manufacturing the same
According to one embodiment, a method of manufacturing a thin-film transistor circuit substrate including forming an oxide semiconductor thin film above an insulative substrate, forming a gate insulation film and a gate electrode which are stacked on a first region of the oxide semiconductor thin film, and exposing from the gate insulation film a second region and a third region of the oxide semiconductor thin film, the second region and the third region being located on both sides of the first region of the oxide semiconductor thin film, forming an interlayer insulation film of silicon nitride including dangling bonds of silicon, the interlayer insulation film covering the second region and the third region of the oxide semiconductor thin film, the gate insulation film and the gate electrode, and forming a source electrode and a drain electrode.. .
07/03/14
20140187052
Selective etching of hafnium oxide using diluted hydrofluoric acid
Provided are methods for processing semiconductor substrates having hafnium oxide structures as well as silicon nitride and/or silicon oxide structures. Etching solutions and processing conditions described herein provide high etching selectivity of hafnium oxide relative to these other materials.
07/03/14
20140187045
Silicon nitride gapfill implementing high density plasma
Methods of filling features with silicon nitride using high-density plasma chemical vapor deposition are described. Narrow trenches may be filled with gapfill silicon nitride without damaging compressive stress.
07/03/14
20140187009
Uniform, damage free nitride etch
An integrated circuit may be formed by forming a sacrificial silicon nitride feature. At least a portion of the sacrificial silicon nitride feature may be removed by placing the integrated circuit in a two-step oxidized layer etch tool and removing a surface layer of oxidized silicon from the sacrificial silicon nitride feature using a two-step etch process.
07/03/14
20140185981
Silicon photonics photodetector integration
A method of forming an integrated photonic semiconductor structure having a photonic device and adjacent cmos devices may include depositing a first silicon nitride layer over the adjacent cmos devices and depositing an oxide layer over the first silicon nitride layer, wherein the oxide layer conformally covers the first silicon nitride layer and the underlying adjacent cmos devices to form a substantially planarized surface over the adjacent cmos devices. A second silicon nitride layer is then deposited over the oxide layer and a region corresponding to forming the photonic device.
07/03/14
20140185347
Compound semiconductor device and manufacturing method therefor
An hemt includes, on an sic substrate, a compound semiconductor layer, a silicon nitride (sin) protective film having an opening and covering the compound semiconductor layer, and a gate electrode formed on the compound semiconductor layer so as to plug the opening. In the protective film, a projecting portion projecting from a side surface of the opening is formed at a lower layer portion 6a..
07/03/14
20140183734
Semiconductor device
Technique capable of achieving reliability improvement of a semiconductor device even if temperature rising of an operation guarantee temperature of the semiconductor device is performed is provided. Gap portions are provided among a plurality of pads, and a glass coat composed of, for example, a silicon oxide film or a silicon nitride film is embedded in the gap portions.
07/03/14
20140183720
Methods of manufacturing integrated circuits having a compressive nitride layer
Methods of manufacturing semiconductor integrated circuits having a compressive nitride layer are disclosed. In one example, a method of fabricating an integrated circuit includes depositing an aluminum layer over a semiconductor substrate, depositing a tensile silicon nitride layer or a neutral silicon nitride layer over the aluminum layer, and depositing a compressive silicon nitride layer over the tensile silicon nitride layer or the neutral silicon nitride layer.
07/03/14
20140183498
Thin film silicon nitride barrier layers on flexible substrate
An article comprising a polymeric substrate and at least one inorganic barrier layer, wherein the inorganic barrier layer has a stress not greater than about 400 mpa and a density of at least about 1.5 g/cm3. The article is preferably an optical device, such as an organic light emitting diode (oled) or a photovoltaic (pv) module, wherein a silicon nitride barrier layer has been directly deposited on a flexible polymeric substrate via plasma enhanced chemical vapor deposition (pecvd)..
06/26/14
20140179107
Etching silicon nitride using dilute hydrofluoric acid
Provided are methods for processing semiconductor substrates or, more specifically, methods for etching silicon nitride structures without damaging photoresist structures that are exposed to the same etching solutions. In some embodiments, a highly diluted hydrofluoric acid is used for etching silicon nitride.
06/26/14
20140179082
Selective etching of hafnium oxide using non-aqueous solutions
Provided are methods for processing semiconductor substrates having hafnium oxide structures as well as one or more of silicon nitride, silicon oxide, polysilicon, and titanium nitride structures. Selected etching solution compositions and processing conditions provide high etching selectivity of hafnium oxide relative to these other materials.
06/26/14
20140179078
Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes: forming a silicon nitride film having a refractive index equal to or larger than 2.2 on a nitride semiconductor layer; and introducing at least one of elements that are oxygen, nitrogen, fluorine, phosphorus, sulfur and selenium into the silicon nitride film, the silicon nitride film including the at least one of elements remaining on the nitride semiconductor layer. The at least one of elements is introduced by a process of exposing the silicon nitride film to plasma including the at least one of elements, a process of ion-implanting the at least one of elements into the silicon nitride film, or a process of thermally diffusing the at least one of elements into the silicon nitride film.
06/26/14
20140178659
Al2o3 or al2o3-contained multilayer coatings for silicon nitride cutting tools by physical vapor deposition and methods of making the same
The present invention provides an al2o3 coated si3n4 cutting tool comprising a si3n4 based substrate body and a coating layer on the substrate body, wherein the coating layer has at least one al2o3 coating layer consisting of amorphous al2o3 or nanocrystalline α-, γ-, or κ-al2o3. The hard and wear resistant refractory coating is deposited onto the si3n4-based substrate body by reactive sputtering using bipolar pulsed dms technique or dual magnetron sputtering method at substrate temperatures of 300-700° c.
06/26/14
20140177039
Sub-wavelength extreme ultraviolet metal transmission grating and manufacturing method thereof
A method of manufacturing a sub-wavelength extreme ultraviolet metal transmission grating is disclosed. In one aspect, the method comprises forming a silicon nitride self-supporting film window on a back surface of a silicon-based substrate having both surfaces polished, then spin-coating a silicon nitride film on a front surface of the substrate with an electron beam resist hsq.
06/26/14
20140175557
Semiconductor device having insulating film with different stress levels in adjacent regions and manufacturing method thereof
An n-channel misfetqn is formed in an nmis first formation region of a semiconductor substrate and a p-channel misfetqp is formed in an adjacent pmis second formation region of the semiconductor substrate. A silicon nitride film having a tensile stress is formed to cover the n-channel misfetqn and the p-channel misfetqp.
06/26/14
20140175520
Metal silicide self-aligned sige heterojunction bipolar transistor and method of forming the same
The present invention discloses a metal silicide self-aligned sige heterojunction bipolar transistor, which is designed to overcome the shortcomings such as the large base resistance rb of the prior art products. The metal silicide self-aligned sige heterojunction bipolar transistor of the present invention mainly comprises an si collector region, a local dielectric region, a base region, a base-region low-resistance metal silicide layer, a polysilicon emitter region, an emitter-base spacer dielectric region composed of a liner silicon oxide layer and a silicon nitride inner sidewall, a monocrystalline emitter region, a contact hole dielectric layer, an emitter metal electrode and a base metal electrode.
06/26/14
20140175473
Light emitting diodes including light emitting surface barrier layers, and methods of fabricating same
A light emitting device includes a light emitting diode (led) having a light emitting surface, a silicon nitride layer on the light emitting surface and a sealed environment surrounding the light emitting surface. The silicon nitride layer may be directly on and cover the light emitting surface.
06/26/14
20140175359
Diffusion barrier layer for resistive random access memory cells
Provided are resistive random access memory (reram) cells having diffusion barrier layers formed from various materials, such as beryllium oxide or titanium silicon nitrides. Resistive switching layers used in reram cells often need to have at least one inert interface such that substantially no materials pass through this interface.
06/26/14
20140174532
Optimized anti-reflection coating layer for crystalline silicon solar cells
Embodiments of the invention include a solar cell and methods of forming a solar cell. Specifically, the methods may be used to form a passivation/anti-reflection layer having desired functional and optical properties on a solar cell substrate.
06/19/14
20140170050
Process for converting silicon tetrachloride to trichlorosilane
The invention relates to a process for converting silicon tetrachloride (stc) to trichlorosilane (tcs), by introducing reactant gas containing stc and hydrogen into a reaction zone of a reactor in which the temperature is 1000-1600° c., wherein the reaction zone is heated by a heater located outside the reaction zone and the product gas containing tcs which forms is then cooled, with the proviso that it is cooled to a temperature of 700-900° c. Within 0.1-35 ms, wherein the reactant gas is heated by the product gas by means of a heat exchanger working in countercurrent, wherein reactor and heat exchanger form a single, gas-tight component, wherein the component includes one or more ceramic materials selected from the group consisting of silicon carbide, silicon nitride, graphite, sic-coated graphite and quartz glass..
06/19/14
20140167265
Methods of forming a bi-layer cap layer on copper-based conductive structures and devices with such a cap layer
One illustrative device disclosed herein includes a layer of insulating material, a copper-based conductive structure positioned in the layer of insulating material and a bi-layer cap layer comprised of a first layer of material positioned on the copper-based conductive structure and a second layer of material positioned on the first layer of material. One method disclosed herein includes forming a copper-based conductive structure in a first layer of insulating material, forming a first layer of a bi-layer cap layer on the copper-based conductive structure, the first layer being comprised of silicon carbon nitride, forming a second layer of the bi-layer cap layer on the first layer, the second layer being comprised of silicon nitride, and forming a second layer of insulating material above the second layer..
06/19/14
20140167211
Method for amnufacturing a semiconductor device
A method of manufacturing a semiconductor device includes forming a silicon nitride film having an opening portion on a semiconductor substrate, forming a silicon oxide film on the silicon nitride film and on a side face of the opening portion, performing an etching treatment to the silicon oxide film so that a sidewall is formed on the side face of the opening portion, forming a trench on the semiconductor substrate with use of the sidewall and the silicon nitride film as a mask, and forming an insulating layer in the trench. The step of forming the silicon oxide film includes oxidizing the silicon nitride film with a plasma oxidation method or a radical oxidation method..
06/19/14
20140166617
Non-local plasma oxide etch
A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (n:) containing precursor.
06/12/14
20140162430
Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material
The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride.
06/12/14
20140158858
Polycrystalline silicon ingot casting mold and method for producing same, and silicon nitride powder for mold release material for polycrystalline silicon ingot casting mold and slurry containing same
Provided are a polycrystalline silicon ingot casting mold and a method for producing a polycrystalline silicon ingot casting mold, with which high-quality silicon ingots can be obtained at high yields by minimizing sticking with the surfaces of the silicon ingot casting mold, and losses and damages that occur when solidified silicon ingot is released from the mold. The method for producing a polycrystalline silicon ingot casting mold having a release layer, including: forming a slurry by mixing a silicon nitride powder with water, coating the surface of the mold with the slurry, and heating the mold at 400 to 800° c.
06/05/14
20140151621
Method of forming anneal-resistant embedded resistor for non-volatile memory application
Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer.
05/29/14
20140145248
Dummy fin formation by gas cluster ion beam
Finfet structures with dielectric fins and methods of fabrication are disclosed. A gas cluster ion beam (gcib) tool is used to apply an ion beam to exposed fins, which converts the fins from a semiconductor material such as silicon, to a dielectric such as silicon nitride or silicon oxide.
05/22/14
20140141626
Method for depositing a chlorine-free conformal sin film
Described are methods of making silicon nitride (sin) materials on substrates. Improved sin films made by the methods are also included.
05/22/14
20140141542
Methods for depositing films on sensitive substrates
Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties.
05/15/14
20140134819
Nanopillar field-effect and junction transistors
Methods for fabrication of nanopillar field effect transistors are described. These transistors can have high height-to-width aspect ratios and be cmos compatible.
05/15/14
20140132908
Liquid crystal display device and method for manufacturing the same
A liquid crystal display device using a plastic substrate becomes required to have high resolution, high opening ratio, high reliability, or the like, with the increasing of a screen size. Besides, high productivity and cost reduction is also required.
05/15/14
20140132902
Manufacturing method for liquid crystal display device
A lcd device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode.
05/15/14
20140131807
Semiconductor device and method of manufacturing the same
A device isolation region is made of a silicon oxide film embedded in a trench, an upper portion thereof is protruded from a semiconductor substrate, and a sidewall insulating film made of silicon nitride or silicon oxynitride is formed on a sidewall of a portion of the device isolation region which is protruded from the semiconductor substrate. A gate insulating film of a misfet is made of an hf-containing insulating film containing hafnium, oxygen and an element for threshold reduction as main components, and a gate electrode that is a metal gate electrode extends on an active region, the sidewall insulating film and the device isolation region.
05/15/14
20140131701
Semiconductor device
To provide a semiconductor device which includes a gate insulating film with high withstand voltage and thus can have high reliability. The semiconductor device includes an oxide semiconductor film over an insulating surface; a pair of first conductive films over the oxide semiconductor film; a first insulating film, a second insulating film, and a third insulating film which are stacked in this order over the oxide semiconductor film and the pair of first conductive films; and a second conductive film overlapping with the oxide semiconductor film over the first to third insulating films.
05/08/14
20140127832
Forming method of an annular storage unit of a magneto-resistive memory
The present invention discloses a method of forming an annular storage structure of a magneto-resistive memory. It relates to the manufacturing process of the semiconductor devices.
05/08/14
20140125936
Electronic device having liquid crystal display device
A display device of the present invention includes a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode, a silicon nitride film formed over the thin film transistor, a resin film formed over the silicon nitride film, an inorganic insulating film formed over the resin film; a metal layer formed over the substrate; and a sealing material formed over the metal layer, wherein the sealing material covers a region where the resin film is not formed over the silicon nitride film.. .
05/08/14
20140124849
B4-flash device and the manufacturing method therof
The invention provides a b4-flash device and the manufacture method thereof, wherein the device comprises a substrate, a first silicon oxide layer, a silicon nitride layer and a second silicon oxide layer, and all those layers are disposed on the substrate in sequence. The first silicon oxide layer comprises a first section, a second section and a third section, and all those sections are along the channel direction in sequence.
05/01/14
20140116387
Pressure relief valve for common rail fuel system
A pressure relief valve for a common rail fuel system includes a hard ceramic spherical valve member that moves into and out of contact with a conical valve seat of a soft metallic valve body. Fretting damage to the valve is inhibited by using the dissimilar materials, and by using a guide pin that is allowed to move on the spherical surface of the ceramic spherical valve member.
05/01/14
20140116016
Honeycomb filter
A honeycomb filter includes a honeycomb structure and plugged portions. Partition walls of the honeycomb structure are made of a partition wall material including a plurality of aggregates containing silicon carbide or silicon nitride as a main component, and a binding material at a content of 15 to 35 mass %.
05/01/14
20140115878
Manufacturing method for touch screen panel
In one aspect, a method of manufacturing a touch screen panel including forming sensing electrodes for touch sensing on a substrate; forming metal patterns for electrical connection of the sensing electrodes on the sensing electrodes; forming a first protective layer including any one of silicon nitride (sin) and silicon oxide (sio) on the metal patterns; and forming a second protective layer including the other of the silicon nitride (sin) and the silicon oxide (sio) on the first protective layer is provided.. .
04/24/14
20140113455
Method of forming a semiconductor structure including a wet etch process for removing silicon nitride
A method disclosed herein includes providing a semiconductor structure comprising a transistor, the transistor comprising a gate electrode and a silicon nitride sidewall spacer formed at the gate electrode. A wet etch process is performed.
04/24/14
20140113230
Positive-type photosensitive resin composition and cured film prepared therefrom
Disclosed herein is a photosensitive resin composition which comprises (a1) at least one compound selected from the group consisting of a silane compound represented by formula (i), a hydrolyzate thereof and a condensate of the hydrolyzate, (a2) a 1,2-quinonediazide compound, and (a3) an amino-based silane coupling agent represented by formula (ii). A cured film prepared from the photosensitive resin composition has an excellent pattern development property, heat resistance and light transmittance, as well as an excellent adhesion property to a silicon nitride(sinx) substrate, and it can be used as a protective film of an electronic component..
04/24/14
20140113156
Making semiconductor bodies from molten material using a free-standing interposer sheet
An interposer sheet can be used for making semiconductor bodies, such as of silicon, such as for solar cell use. It is free-standing, very thin, flexible, porous and able to withstand the chemical and thermal environment of molten semiconductor without degradation.
04/24/14
20140110806
Solid-state imaging device and method of manufacturing solid-state imaging device
According to one embodiment, a solid-state imaging device includes a photoelectric conversion element, a fixed charge layer, a silicon nitride film, and a silicon oxide film. The photoelectric conversion element performs photoelectric conversion of converting incident light into the amount of charges corresponding to the amount of received light, and accumulates the charges.
04/24/14
20140110110
Porous proppants
A lightweight proppant with high crush strength can include a ceramic such as silicon carbide or silicon nitride.. .
04/17/14
20140106577
Method and apparatus of forming silicon nitride film
Provided is a method of forming a silicon nitride film on an object to be processed, which includes: supplying a silicon raw material gas into a processing chamber; and supplying a nitridant gas into the processing chamber, wherein supplying the silicon raw material gas includes an initial supply stage in which the silicon raw material gas is initially supplied and a late supply stage following the initial supply stage, wherein a first internal pressure of the processing chamber defined in the initial supply stage is lower than a second internal pressure of the processing chamber defined in the late supply stage.. .
04/17/14
20140104687
Production method for optical component and optical component
A method for manufacturing a light transmissive optical component, includes a first etching process of forming a depressed portion by applying etching to a silicon region of a plate-shaped member, a thermal oxidation process of forming a silicon oxide film by thermally oxidizing an inner side surface of the depressed portion, and a nitride film formation process of forming a silicon nitride film that covers the silicon oxide film. Accordingly, it is possible to realize a manufacturing method for an optical component which is capable of uniformly forming a silicon oxide film on a semi-transmissive reflecting surface which is largely inclined (or nearly vertical) with respect to a substrate surface, and an optical component produced by this method..


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Silicon Nitride topics: Silicon Nitride, Semiconductor, Silicon Dioxide, Silicon Carbide, Ion Channel, Enhancement, Semiconductor Substrate, Ion Implant, Transistors, Interrupted, Photodiode, Gallium Nitride, Planarization, Replacement Gate, Semiconductor Device

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