|| List of recent Semiconductors-related patents
| Back contact solar cells with effective and efficient designs and corresponding patterning processes|
Laser based processes are used alone or in combination to effectively process doped domains for semiconductors and/or current harvesting structures. For example, dopants can be driven into a silicon/germanium semiconductor layer from a bare silicon/germanium surface using a laser beam.
| Solid-state imaging device|
In a solid-state imaging device, n regions serving as photoelectric conversion diodes are formed on outer peripheries of p regions in upper portions of island-shaped semiconductors formed on a substrate, and p+ regions connected to a pixel selection line conductive layer are formed on top layer portions of upper ends of the island-shaped semiconductors so as to adjoin the n regions and the p regions. In the p+ regions, a first p+ region has a thickness less than a second p+ region, and the second p+ region has a thickness less than a third p+ region..
| Complexation of low-molecular semiconductors for the application as an emitter complex in organic light-emitting electrochemical cells (oleecs)|
The invention relates to an oleec component and to a production process therefor. This component has an active layer including a novel emitter complex.
|Laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation|
Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation. A method includes forming a dopant-containing amorphous silicon layer stack on at least one portion of a surface of a crystalline semiconductor layer, and irradiating a selected area of the dopant-containing amorphous silicon layer stack, wherein the selected area of the dopant-containing amorphous silicon layer stack interacts with an upper portion of the underlying crystalline semiconductor layer to form a doped, conductive crystalline region, and each non-selected area of the dopant-containing amorphous silicon layer stack remains intact on the at least one portion of the surface of the crystalline semiconductor layer..
|Multilayer line trimming|
Substantially simultaneous plasma etching of polysilicon and oxide layers in multilayer lines in semiconductors allows for enhanced critical dimensions and aspect ratios of the multilayer lines. Increasing multilayer line aspect ratios may be possible, allowing for increased efficiency, greater storage capacity, and smaller critical dimensions in semiconductor technologies..
|Solution processing of kesterite semiconductors|
Wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; −1≦q≦1, generally include contacting a hydrazine-based solvent, a source of cu, a source of sn, a source of zn carboxylate, a source of at least one of s and se, under conditions sufficient to form a solution substantially free of solid particles; applying the solution onto a substrate to form a thin layer; and annealing the thin layer at a temperature, pressure, and length of time sufficient to form the kesterite film. Also disclosed are hydrazine-based precursor solutions for forming a kesterite film and a photovoltaic device including the kesterite film formed by the above method..
|Laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation|
Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation. A structure includes a crystalline semiconductor having at least one surface, a doped crystalline region disposed in at least one selected area of the semiconductor surface, and a dopant-containing amorphous silicon layer stack containing a same dopant as present in the doped crystalline region on at least a portion of the semiconductor surface outside the selected area, wherein the dopant-containing amorphous silicon layer stack passivates the portion of the semiconductor surface on which it is disposed..
|Mixtures of organic emissive semiconductors and matrix materials, their use and electronic components comprising said materials|
The present invention relates to new types of material mixtures composed of at least two substances, one serving as a matrix material and the other being an emission material capable of emission and containing at least one element of atomic number greater than 20, and for their use in organic electronic components such as electroluminescent elements and displays.. .
|Semiconducting compounds and optoelectronic devices incorporating same|
Disclosed are new compounds having semiconducting properties. Such compounds can be processed in solution-phase into thin film semiconductors that exhibit high carrier mobility and/or good current modulation characteristics..
|Metathesis-active adhesion agents and methods for enhancing polymer adhesion to surfaces|
The invention discloses an adhesion agent composition comprising at least one c3-c200 olefin compound having at least one metathesis active double bond, wherein the olefin is substituted or unsubstituted; and at least one compatibilizing functionality for interacting with a substrate surface. The substrate surface can be any surface, for example, silicate glasses, silicate minerals, metals, metal alloys, ceramics, natural stones, plastics, carbon, silicon, and semiconductors.
|Photoelectric conversion element and solar cell|
A photoelectric conversion element includes a photoelectric conversion layer, a transparent electrode, an intermediate layer, and a window layer. The photoelectric conversion layer includes a homojunction of a p-type compound semiconductor layer and an n-type compound semiconductor layer.
|Regioregular pyridal[2,1,3]thiadiazole pi-conjugated copolymers for organic semiconductors|
A method of regioselectively preparing a pyridine-containing compound is provided. In particular embodiments, the method includes reacting halogen-functionalized pyridal[2,1,3]thiadiazole with organotin-functionalized cyclopenta[2,1-b:3,4-b′]dithiophene or organotin-functionalized indaceno[2,1-b:3,4-b′]dithiophene.
|Photo emitter x-ray source array (pexsa)|
A photo-emitter x-ray source is provided that includes a photocathode electron source, a laser light source, where the laser light source illuminates the photocathode electron source to emit electrons, and an x-ray target, where the emitted electrons are focused on the x-ray target, where the x-ray target emits x-rays. The photocathode electron source can include alkali halides (such as csbr and csi), semiconductors (such as gaas, inp), and theses materials modified with rare earth element (such as eu) doping, electron beam bombardment, and x-ray irradiation, and has a form factor that includes planar, patterned, of optically patterned.
|Nanopyramid sized opto-electronic structure and method for manufacturing of same|
Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, leds and transistors.
|Systems and methods for terminating junctions in wide bandgap semiconductor devices|
An electrical device includes a blocking layer disposed on top of a substrate layer, wherein the blocking layer and the substrate layer each are wide bandgap semiconductors, and the blocking layer and the substrate layer form a buried junction in the electrical device. The device comprises a termination feature disposed at a surface of the blocking layer and a filled trench disposed proximate to the termination feature.
|Method and system for determining overlap process windows in semiconductors by inspection techniques|
The formation of overlap areas in sophisticated semiconductor devices is a critical aspect which may not be efficiently evaluated on the basis of conventional measurement and design strategies. For this reason, the present disclosure provides measurement techniques and systems in which overlying device patterns are transformed into the same material layer, thereby forming a combined pattern which is accessible by well-established defect inspection techniques.
|Nitride nanowires and method of producing such|
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, leds and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a cvd based selective area growth technique.
|Circular transmission line methods compatible with combinatorial processing of semiconductors|
Methods and structures are described for determining contact resistivities and schottky barrier heights for conductors deposited on semiconductor wafers that can be combined with combinatorial processing, allowing thereby numerous processing conditions and materials to be tested concurrently. Methods for using multi-ring as well as single-ring ctlm structures to cancel parasitic resistance are also described, as well as structures and processes for inline monitoring of properties..
|Methods for forming semiconductor device structures|
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.. .
|Thermoelectric ornamental assembly|
A thermoelectric ornamental assembly for generating thermoelectric energy in a body adornment like a ring. The assembly uses a thermoelectric effect to generate an applied temperature gradient between an inner layer and an outer layer of the ring.
|Light emitting device and light emitting device package having the same|
Disclosed are a light emitting device. The light emitting device includes a light emitting structure including a first and second conductive semiconductors, and an active layer; an insulating layer on a lateral surface of the light emitting structure; an electrode on the first conductive semiconductor layer; an electrode layer under the second conductive semiconductor layer; and a protective layer including a first portion between the light emitting structure and the electrode layer and a second portion extending outward beyond a lower surface of the light emitting structure, wherein the first conductive semiconductor layer includes a first top surface including a roughness on a first region, and a second top surface lower than the first region and being closer the lateral surface of the light emitting structure than the first region, wherein the second top surface is disposed on an edge portion of the first conductive semiconductor layer..
|Method for in-line determination of film thickness and quality during printing processes for the production of organic electronics|
The present invention is related to the in-line determination of thickness, optical properties and quality of thin films and multilayer structures of organic (conductors, semiconductors and insulators), hybrid (organic/inorganic) and inorganic (e.g. Metals, oxides) materials in real-time by the use of spectroscopic ellipsometry—se, during their printing and/or treating by roll-to-roll and sheet-to-sheet processes.
|Deposition chamber and injector|
A system and method are disclosed for processing semiconductors. An embodiment comprises a reaction chamber for processing wafers and having walls tapering at an angle that is greater than 0 degrees and less than about 35 degrees from a first end optionally having a diameter of 341 to 380 millimeters to a second end optionally having a diameter of 300 to 340 millimeters at a second end, with gas flow from the first end to the second end, and having at least one deposition injector near the first end of the reaction chamber and having a plurality of injector openings that disperse injection material across a cross section of the reaction chamber for forming a deposition layer..
|Laser-induced flaw formation in nitride semiconductors|
An embodiment is a method to induce flaw formation in nitride semiconductors. Regions of a thin film structure are selectively decomposed within a thin film layer at an interface with a substrate to form flaws in a pre-determined pattern within the thin film structure.
|Catalysts and methods of use|
The present invention relates to a catalyst comprising (i) a semiconductor preferably comprising one or more metal-(group vib) semiconductors, and (ii) a semiconductor material having elevated phosphorous content preferably comprising one or more metal-(group vib))-phosphorous species. .
|Mocvd for growing iii-v compound semiconductors on silicon substrates|
A device includes providing a silicon substrate; annealing the silicon substrate at a first temperature higher than about 900° c.; and lowering a temperature of the silicon substrate from the first temperature to a second temperature. A temperature lowering rate during the step of lowering the temperature is greater than about 1° c./second.
|Naphthalene-diimide-heterocycle-naphthalene diimide oligomers as organic semiconductors and transistors therefrom|
The various inventions and/or their embodiments disclosed herein relate to certain naphthalene diimide (ndi) compounds wherein the ndi groups are bonded to certain subclasses of bridging heteroaryl (har) groups, such as the “ndi-har-ndi” oligomeric compounds, wherein har is a heteroaryl group chosen to provide desirable electronic and steric properties, and the possible identities of the “rz” terminal peripheral substituent groups are described herein. Transistor and inverter devices can be prepared..
|Pyrrolo[3,2-b]pyrrole-2,5-diones and their use as organic semiconductors|
The invention relates to novel compounds based on pyrrolo[3,2-b]pyrrole-2,5-dione, methods for their preparation and intermediates used therein, mixtures and formulations containing them, the use of the compounds, mixtures and formulations as semiconductor in organic electronic (oe) devices, especially in organic photovoltaic (opv) devices, and to oe and opv devices comprising these compounds, mixtures or formulations.. .
|Electromagnetic high frequency homopolar generator|
Electromagnetic high frequency homopolar generator is a type of homopolar generator that can continuously transform kinetic energy into high frequency current. Operating frequency of this generator is independent from speed of rotation.
|Electrical motor vehicle coolant pump|
An electric coolant pump for a motor vehicle includes a wet section in which is arranged an impeller and a permanently magnetized motor rotor of an electronically commutated electromotor, a dry section in which is arranged an electric circuit board comprising a plurality of power semiconductors which each comprise a cooling lug, and a partition wall lying in a traverse plane. The partition wall is arranged to separate the wet section and the dry section.
|Dinaphto[2,3-a:2'3'-h]phenazines and their use as organic semiconductors|
The invention relates to novel dinaphtho[2,3-a:2′,3′-h]phenazine conmpounds, to methods for their preparation and intermediates used therein, formulations comprising them, the use of these compounds and formulations as semiconductor material in organic electronic (oe) devices, and oe devices comprising these compounds and formulations.. .
|Method of metal plating semiconductors|
A metal underlayer is selectively plated on semiconductor wafers immediately followed by plating copper on the metal underlayer using a low internal stress copper plating bath. Additional metallization may be done to build up the metal layers using conventional metal plating baths and methods to form current tracks.
|Tetraazaperopyrene compounds and their use as n-type semiconductors|
A tetraazaperopyrene compound of formula (i): wherein: r1, r2, r3, r4, r5, r6, r7, r8 at each occurrence, independently are selected from h, cl and br, with the proviso that at least one of r 1, r2, r3, r4, r5, r6, wand r8 is cl or br, r9, r10, at each occurrence, independently are selected from h, a c1-30 alkyl group, a c1-30 haloalkyl group, a c6-14 aryl group, a heteroaryl group having 5 to 14 ringatoms, and a c7-20 arylalkyl group, wherein aryl, heteroaryl and arylalkyl can be optionally substituted with one or more halogen, c1-4 haloalkyl, —cn, —no2, —cho, —cooh, —conh2, —co(c1-14 alkyl), —coo(c1-14 alkyl), —conhc(c1-14 alkyl) and —con(c1-14 alkyl)2 groups.. .
|Reversibly water-soluble nanocrystals|
A general, facile, and reversible nanocrystal (ncs) phase transfer protocol via ligand exchange using nucleotides and/or nucleosides is provided to generate reversibly water-soluble nanocrystals. This phase transfer strategy can be employed on a wide variety of chemically synthesized nanostructured materials including semiconductors, metal oxides and noble metals with different sizes and shapes.
|Processing multilayer semiconductors with multiple heat sources|
A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber..
|Integrated circuit structures containing a strain- compensated compound semiconductor layer and methods and system related thereto|
A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into an electronic device, such as, for example, a sige npn hbt, by substitutional placement of strain-compensating atomic species. The invention also applies to strained layers in other electronic devices such as strained sige, si in mos applications, vertical thin film transistors (vtft), and a variety of other electronic device types.
|Method for producing perforated workpieces in a stress-relieving manner|
A method for producing perforated work pieces from glass, glass ceramics, or semiconductors in a stress-relieving manner is provided. The method includes heating the work piece up to the glass transition temperature and perforating the work piece using a high-voltage electric field of suitable frequency or pulse shape.
|Method for substrate pretreatment to achieve high-quality iii-nitride epitaxy|
The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-iii nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (hcl) and aluminum metal (al).
|Color sensor insensitive to distance variations|
A system for calibrating a color sensing pixel based upon the distance between the color sensing pixel and an object. The distance is determined by measuring the phase shift of electromagnetic radiation as reflected from the surface of the object compared with the wave profile of the electromagnetic radiation incident on the object surface.
|Multilayer substrate structure and method of manufacturing the same|
A multilayer substrate structure comprises a substrate, a thermal matching layer formed on the substrate and a lattice matching layer above the thermal matching layer. The thermal matching layer includes at least one of molybdenum, molybdenum-copper, mullite, sapphire, graphite, aluminum-oxynitrides, silicon, silicon carbide, zinc oxides, and rare earth oxides.
|Three dimensional strained semiconductors|
In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure..
|Method for operating a resistance welding device|
The service life of the power semiconductors of a resistance welding device largely determines the reliability of the installation in operation. The disclosure proposes a method for monitoring the remaining service life of power semiconductors that are exposed to current during the operation of a resistance welding device.
|Coincident site lattice-matched growth of semiconductors on sustrates using compliant buffer layers|
A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a iii-v semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials.
|Lattice matching layer for use in a multilayer substrate structure|
A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element.
|Functionalized anthracene-capped oligothiophenes and organic semiconductors based on the same, use thereof|
The present invention relates to a series of compounds having functionalized anthracene-capped oligothiophenes and its derivatives and the organic semiconductor device using the same, in particular, organic field-effect transistors (ofets) comprising the above compounds.. .
|Metal complexes for use as dopants and other uses|
The invention relates to electrochemical devices comprising complexes of cobalt comprising at least one ligand with a 5- or six membered, n-containing heteroring. The complex are useful as p- and n-dopants, as over of electrochemical devices, in particular in organic semiconductors.
|Sub-module of a modular multi-stage converter|
A sub-module for a modular multi-stage converter has an energy store and a power semiconductor series circuit connected in parallel to the energy store. In the semiconductor series circuit, two power semiconductor switches that can be activated and deactivated and have the same forward direction are connected in series.
|Multi-junction solar cell and manufacturing method therefor|
The present invention provides a multi-junction solar cell capable of increasing the degree of freedom of the selection of compound semiconductors. The multi-junction solar cell 1 includes a layered structure section 4 including compound semiconductor photovoltaic devices 2 and 3 matched in lattice constant with each other and joined to each other, and a nanopillar structure section 7 including a compound semiconductor photovoltaic device or a plurality of compound semiconductor photovoltaic devices 5 and 6 joined to each other..
|Tetraazapyrene compounds and their use as n-type semiconductors|
Provided are tetraazapyrene compounds of formula (i) and their use as n-type semiconductors. In formula (i), r1, r2, r3, r4, at each occurrence, independently are selected from h, a c1-30 alkyl group, a c1-30 alkoxy group, a c1-30 alkylthio group, a c6-14 aryl group, a c6-14 aryloxy group, a c6-14 arylthio group, a c7-20 arylalkyl group, ci and br; r5, r6, at each occurrence, independently are selected from h, a c1-30 alkyl group, a cy1-30 haloalkyl group, a c6-14 aryl group and a c7-20 arylalkyl group, wherein aryl and arylalkyl can be optionally substituted with one or more halogen, c1-4 haloalkyl, —cn, —no2, —cho, —cooh, —conh2, —co(c1-14 alkyl), —coo(c1-14 alkyl), conhc(c1-14 alkyl) and —con(c1-14 alkyl)2 groups, with the proviso that at least one of r1, r2, r3, r4 is a c6-14 aryloxy, a c6-14 arylthio i group, ci or br.
|Modular inverter arrangement|
An arrangement for a modular inverter includes a number of power semiconductors and cooling elements, where the cooling elements are connected to the power semiconductors for cooling the power semiconductors. The power semiconductors and the cooling elements are disposed around a center axis of the arrangement in such a manner that they demark a channel around the center axis in which a cooling medium is able to flow in the direction of the center axis.
|Methods to enhance doping concentration in near-surface layers of semiconductors and methods of making same|
A die includes a semiconductive prominence and a surface-doped structure on the prominence. The surface-doped structure makes contact with contact metallization.
|Ultra-large grain polycrystalline semiconductors through top-down aluminum induced crystallization (taic)|
A seed layer structure is annealed. The seed layer structure comprises a crystallization catalyst material on a seed semiconductor over a substrate.
|Uv curing system for semiconductors|
Embodiments of an ultraviolet (uv) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a uv radiation source disposed above the chamber, and a uv transparent window interspersed between the radiation source and wafer support.
|Single-shot semiconductor processing system and method having various irradiation patterns|
High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece (170) is irradiated with a laser beam (164) to melt and recrystallize target areas of the surface exposed to the laser beam.
An optoelectronic device comprising a charge transfer layer including a first semiconductive polymer comprising one or more zwitterions.. .
|Reliable area joints for power semiconductors|
A power semiconductor module includes an electrically insulating substrate, copper metallization disposed on a first side of the substrate and patterned into a die attach region and a plurality of contact regions, and a semiconductor die attached to the die attach region. The die includes an active device region and one or more copper die metallization layers disposed above the active device region.
|Blends of fullerene derivatives, and uses thereof in electronic devices|
Disclosed are compositions of mixed fullerene derivatives with utility in organic semiconductors, and methods of making and using such compositions. In certain embodiments, the present invention relates to compositions of mixed fullerene derivatives further comprising one or more additional fullerene-based components within specified ranges.
|Quinone compounds for use in photovoltaic application|
The invention relates to a photovoltaic coating containing a mixture of organic n-type (acceptor) and p-type (donor) semiconductor compounds, which makes it possible, when selecting the donor/acceptor pair, to modulate the semiconductor properties of the photovoltaic coating so as to enable the use thereof within a photovoltaic device, wherein one of the organic semiconductors includes a quinone core.. .
|Flavanthrene derivatives and their use as organic semiconductors|
The invention relates to benzo[h]benz[5,6]acridino[2,1,9,8-klmna]acridines, methods of their preparation, their use as semiconductors in organic electronic (oe) devices, and to oe devices comprising them.. .
|Transparent electrode and electronic material comprising the same|
A transparent electrode includes: a substrate, a first electrode layer formed on the substrate, and a graphene oxide layer formed on and/or under the first electrode layer, and an electronic material for same. The transparent electrode includes graphene oxide layers on and under a conductor and/or a semiconductor to maintain a resistance measured on a surface of a graphene oxide layer in a transparent electrode including the graphene oxide layer almost equal to a resistance of a conductor and/or a semiconductor while showing characteristics of an insulator between conductors or semiconductors or between a conductor and a semiconductor which are separated from each other.
|Microelectronic structures including cuprous oxide semiconductors and having improved p-n heterojunctions|
The present invention provides strategies for making higher quality p-n heterojunctions that incorporate cuprous oxide and another material suitable for forming the heterojunction. When incorporated into microelectronic devices, these improved heterojunctions would be expected to provide improved microelectronic properties such as improved defect density, in particular lower interfacial defect density at the p-n heterojunction, leading to improved microelectronic devices such as solar cell devices with improved open circuit voltage, fill factor, efficiency, current density, and the like..
|Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture|
A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride.
|Gaussian surface lens quantum photon converter and methods of controlling led colour and intensity|
This invention is a photon-interactive gaussian surface lens method means that converts incident photons from a single or a plurality of wide band gap semiconductor class light emitting diode dies, into a secondary emission of photons emanating from a composite photon transparent colloidal stationary suspension of quantum dots, high efficiency phosphors, a combination of quantum dots and high efficiency phosphors and nano-particles of metal, silicon or similar semiconductors from the iiib and ivb group of the periodic table and any nano-material and/or micro/nano spheres that responds to rayleigh scattering and/or mie scattering; and a plurality of quantum dots in communication with said nano-particles in said suspension. The patent teaches that utilizing this method means results in improved narrow pass-band of red, green, and blue photon efficiency over phosphor based conversion.
|Power semiconductor module|
A power semiconductor module includes a base plate and at least one pair of substrates mounted on the base plate. Multiple power semiconductors are mounted on each substrate.
|Thiocyanato or isothiocyanato substituted naphthalene diimide and rylene diimide compounds and their use as n-type semiconductors|
Disclosed are thiocyanato or isothiocyanato substituted naphthalene diimide and rylene diimide compounds according to formula (i), use of these compounds as n-type semiconductors, methods of preparing these compounds, as well as various compositions, composites, and devices that incorporate these compounds.. .
|Electrochemical etching of semiconductors|
Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range.
|Composition for increasing the lipophobicity of a watch-making component|
The present invention describes the highly advantageous properties of a mixture of thiol-perfluoropolyether (pfpe) molecules with perfluorinated bisphosphonic (pf-bp) compounds. This mixture makes it possible in effect to obtain a lipophobic behaviour (also referred to as “epilame” effect) with common watch-making lubricants on all the materials tested, including metals, inter alia gold and alloys thereof, ceramics and semiconductors, and gives the surface treated a good resistance to ageing and to cleaning products..
|Assembly device for semiconductors|
An exemplary assembly device includes a first loading plate, a movable pole, a driving element, a first camera module, a transparent fetching element, a first processor, a first adjusting element, and a controller. The first loading plate loads a first workpiece.
|Metal assisted chemical etching to produce iii-v semiconductor nanostructures|
Methods of metal assisted chemical etching iii-v semiconductors are provided. The methods can include providing an electrically conductive film pattern disposed on a semiconductor substrate comprising a iii-v semiconductor.
|Method and apparatus for high resolution photon detection based on extraordinary optoconductance (eoc) effects|
The inventors disclose a new high performance optical sensor, preferably of nanoscale dimensions, that functions at room temperature based on an extraordinary optoconductance (eoc) phenomenon, and preferably an inverse eoc (i-eoc) phenomenon, in a metal-semiconductor hybrid (msh) structure having a semiconductor/metal interface. Such a design shows efficient photon sensing not exhibited by bare semiconductors.
|Semiconductor heterostructure and transistor of hemt type, in particular for low-frequency low-noise cryogenic applications.|
A semiconductor heterostructure having: a substrate (ss); a buffer layer (h); a spacer layer (d, e, f); a barrier layer (b, c); and which may also include a cover layer (a) is provided. The barrier layer is doped (ds); and the barrier and spacer layers are made of one or more semiconductors having wider bandgaps than the one or more materials forming the buffer layer, the heterostructure being characterized in that: the barrier layer comprises a first barrier sublayer (c) in contact with the spacer layer, and a second barrier sublayer (b), distant from the spacer layer; and in that the second barrier sublayer has a wider bandgap than the first barrier sublayer.
|As/sb compound semiconductors grown on si or ge substrate|
An as(arsenic)/sb(antimony) compound semiconductor is grown on a si(silicon) or ge (germanium) substrate. With the present invention, island-like growth on the si or ge substrate owing to lattice constant mismatch is prevented.