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Semiconductors

Semiconductors-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Finfets with source/drain cladding
Taiwan Semiconductor Manufacturing Company, Ltd.
January 11, 2018 - N°20180012989

A device includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate. A semiconductor fin is between opposite portions of the isolation regions, wherein the semiconductor fin is over top surfaces of the isolation regions. A gate stack overlaps the semiconductor fin. A source/drain region is on a side of the gate stack and connected to the ...
High voltage direct current power transmission series valve group control device
Nr Engineering Co., Ltd.
January 04, 2018 - N°20180006462

A high voltage direct current power transmission series valve group control device, is used for regulating a series circuit having two or more valve groups provided with controllable power semiconductors respectively. Each valve group is provided with a current regulation unit and a voltage regulation unit. The current regulation unit controls a direct current current flowing through a valve group ...
Doped diamond semi-conductor and method of manufacture
Adamantite Technologies Llc
January 04, 2018 - N°20180006121

A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having ...
Semiconductors Patent Pack
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Semiconductors Patent Applications
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  • 132+ full patent PDF documents of Semiconductors-related inventions.
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Metal contacts to group iv semiconductors by inserting interfacial atomic monolayers
Acorn Technologies, Inc.
December 28, 2017 - N°20170373164

Techniques for reducing the specific contact resistance of metal-semiconductor (group iv) junctions by interposing a monolayer of group v or group iii atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group iv semiconductor junctions find application as a ...
Method for doping semiconductors
Merck Patent Gmbh
December 28, 2017 - N°20170372903

The present invention relates to a process for the production of structured, highly efficient solar cells and of photovoltaic elements which have regions of different doping. The invention likewise relates to the solar cells having increased efficiency produced in this way.
High rate sputter deposition of alkali metal-containing precursor films useful to fabricate chalcogenide semiconductors
Nuvoson, Inc.
December 28, 2017 - N°20170372897

The present invention provides methods to sputter deposit films comprising alkali metal compounds. At least one target comprising one or more alkali metal compounds and at least one metallic component is sputtered to form one or more corresponding sputtered films. The at least one target has an atomic ratio of the alkali metal compound to the at least one metallic ...
Semiconductors Patent Pack
Download 132+ patent application PDFs
Semiconductors Patent Applications
Download 132+ Semiconductors-related PDFs
For professional research & prior art discovery
inventor
  • 132+ full patent PDF documents of Semiconductors-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Method of manufacturing semiconductor device, and semiconductor device
Mitsubishi Electric Corporation
December 21, 2017 - N°20170365981

A method of manufacturing a semiconductor device includes a step of forming a mesa portion including an active layer above a substrate, and an n-type layer above the active layer, a step of forming a current confinement portion on left and right of the mesa portion, the current confinement portion including a p-type current blocking layer, an n-type current blocking ...
Laser doping of semiconductors
Merck Patent Gmbh
December 21, 2017 - N°20170365734

The present invention relates to a process for the production of structured, highly efficient solar cells and of photovoltaic elements which have regions of different doping. The invention likewise relates to the solar cells having increased efficiency produced in this way.
Method of manufacturing high resistivity soi wafers with charge trapping layers based on terminated si ...
Sunedison Semiconductor Limited (uen201334164h)
December 21, 2017 - N°20170365506

A method of preparing a single crystal semiconductor handle wafer in the manufacture of a silicon-on-insulator device is provided. The method comprises forming a multilayer of passivated semiconductors layers on a dielectric layer of a high resistivity single crystal semiconductor handle wafer. The method additionally comprises forming a semiconductor oxide layer on the multilayer of passivated semiconductor layers. The multilayer ...
Creation of hyperdoped semiconductors with concurrent high crystallinity and high sub-bandgap absorptance using nanosecond laser ...
President And Fellows Of Harvard College
December 21, 2017 - N°20170365476

In one aspect, a method of processing a semiconductor substrate is disclosed, which comprises incorporating at least one dopant in a semiconductor substrate so as to generate a doped polyphase surface layer on a light-trapping surface, and optically annealing the surface layer via exposure to a plurality of laser pulses having a pulsewidth in a range of about 1 nanosecond to ...
Array voltage regulating technique to enable data operations on large memory arrays with resistive memory ...
Unity Semiconductor Corporation
December 21, 2017 - N°20170364296

Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to preserve states of memory elements in association with data operations using variable access signal magnitudes for other memory elements, such as implemented in third dimensional memory technology. In some embodiments, a memory device can include a cross-point array with ...
A power device and method for driving a load
Koninklijke Philips N.v.
December 21, 2017 - N°20170363698

Embodiments of the invention provide a power device. The power device comprises a switch mode power conversion circuit with power semiconductors for driving a load in response to a control signal, a controller coupled to the switch mode power conversion circuit to generate the control signal based on a predetermined current profile to be provided to the load and a ...
Frequency converter
Schmidhauser Ag
December 14, 2017 - N°20170357556

A frequency converter has a control unit. The control unit has: a serial control unit interface, a control unit clock pulse generator for generating a control unit clock pulse, wherein data are transmitted via the serial control unit interface depending on the control unit clock pulse, and a control unit processor which is designed to define at least one control ...
Semiconductors Patent Pack
Download 132+ patent application PDFs
Semiconductors Patent Applications
Download 132+ Semiconductors-related PDFs
For professional research & prior art discovery
inventor
  • 132+ full patent PDF documents of Semiconductors-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Integrated circuits and methods of manufacturing
Leonardo Mw Ltd.
December 07, 2017 - N°20170352630

A technique for making high performance low noise amplifiers, low cost high performance rf, microwave circuits and other devices by using a minimum of costly high performance semiconductors is described. By combining a single discrete portion of an expensive semiconductor with a less expensive gaas carrier, mmic devices with improved performance over their discrete counterparts are achieved.
Graphene-semiconductor based wavelength selective photodetector for sub-bandgap photo detection
The University Of Hong Kong
December 07, 2017 - N°20170352492

Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the ...
Organic semiconductor solution blends for switching ambipolar transport to n-type transport
The Regents Of The University Of California
November 23, 2017 - N°20170338415

The present disclosure describes additives that attenuate a specific transport channel in ambipolar semiconductors to achieve unipolar characteristics. Carrier selective traps are included in the ambipolar semiconductors and are chosen on the basis of energetic preferences for holes or electrons and the relative positions of the molecular orbital energies of host polymer and the dopants. In one embodiment, a composition ...
Method for producing chlorinated oligosilanes
Nagarjuna Fertilizers And Chemicals Limited
November 23, 2017 - N°20170334730

The present invention relates to a process for preparing chlorinated oligosilanes, wherein chlorinated polysilane having an empirical formula of sicl1. 0-2. 8 and/or a mixture comprising the chlorinated polysilane is reacted with elemental chlorine or a chlorine-containing mixture. Additionally claimed are chlorinated oligosilanes prepared by the process and the use thereof for production of semiconductors and/or hard coatings.
Motor system
Lenze Drives Gmbh
November 16, 2017 - N°20170331345

A motor system includes: a stator; a rotor; a motor shaft, which is mechanically coupled for conjoint rotation with the rotor, and which defines a radial direction and an axial direction of the motor system; heat-generating components, in particular power semiconductors; a control device which is designed to control an operation of the motor system; and a housing. The housing ...
Conjugated polymers
Max-planck-gesellschaft Zur Foerderung Der Wissens Chaften E.v.
November 16, 2017 - N°20170331043

The invention relates to new conjugated semiconducting polymers containing thermally cleavable side groups. The thermally cleavable side groups are selected from among carbonate groups and carbamate groups, by thermally cleaving side groups, the solubility or the polymers can he reduced in a targeted manner. The polymers are used as semiconductors in organic electronic (oe) devices, especially in organic photovoltaic (opv) ...
Method of fabricating a transistor with nano-layers having a vertical channel
Commissariat A L'energie Atomique Et Aux Energies Alternatives
November 16, 2017 - N°20170330958

A process for fabricating a vertical transistor is provided, including steps of providing a substrate surmounted by a stack of first to third layers made of first to third semiconductors materials of two different types; partially etching the first and third layers with an etching that is selective, so as to form a first void in the first layer and ...
Polysulfonamide redistribution compositions and methods of their use
Commissariat A L'energie Atomique Et Aux Energies Alternatives
November 16, 2017 - N°20170329222

The invention relates to polysulfonamide compositions for use as redistribution layers as used in the manufacture of semiconductors and semiconductor packages. More specifically it relates to photoimageable polysulfonamide composition for redistribution applications. The invention also relates to the use of the compositions in semiconductor manufacture.
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