Semiconductor

Semiconductor-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).

Image View List View Download All PDFs Archive

loading
NEW Semiconductor image sensor with integrated pixel heating and method of operating a semiconductor image sensor
May 25, 2017 - N°20170150081

The semiconductor image sensor comprises a plurality of pixels (1) with photo sensors (2). At least one heater (4) is integrated with the photo sensors and is arranged in at least one of the pixels or in the vicinity of at least one of the pixels. An appropriate operation of the heater will increase the temperature of the relevant pixel. Thus it is ...
NEW Image sensor and light source driver integrated in a same semiconductor package
May 25, 2017 - N°20170150079

An apparatus is described that includes an image sensor and a light source driver circuit integrated in a same semiconductor chip package. The image sensor includes visible light pixels and depth pixels. The depth pixels are to sense light generated with a light source drive signal. The light source drive signal is generated with the light source driver circuit.
NEW Image sensor
May 25, 2017 - N°20170150078

A light receiving element includes a first semiconductor layer of a first conductivity type to which a first potential is to be applied, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer, first and second regions of the first conductivity type formed in an upper portion of the second semiconductor layer, a first electrode ...
NEW Semiconductor Patent Pack
Download 122+ patent application PDFs
Semiconductor Patent Applications
Download 122+ Semiconductor-related PDFs
For professional research & prior art discovery
inventor
  • 122+ full patent PDF documents of Semiconductor-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
NEW On-chip electromagnetic bandgap (ebg) structure for noise suppression
May 25, 2017 - N°20170149404

An integrated circuit (ic) die for electromagnetic band gap (ebg) noise suppression is provided. A power mesh and a ground mesh are stacked within a back end of line (beol) region overlying a semiconductor substrate, and an inductor is arranged over the power and ground meshes. The inductor comprises a plurality of inductor segments stacked upon one another and connected ...
NEW Semiconductor device
May 25, 2017 - N°20170149393

In a semiconductor device, received signals of different frequency bands are input selectively to low noise amplifiers. A plurality of primary inductors are coupled between differential output nodes of the respective low noise amplifiers. A secondary inductor is provided commonly for the primary inductors, and magnetically coupled to the primary inductors. A demodulator converts a received signal transmitted from one ...
NEW Photonic degradation monitoring for semiconductor devices
May 25, 2017 - N°20170149383

Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.
NEW Semiconductor Patent Pack
Download 122+ patent application PDFs
Semiconductor Patent Applications
Download 122+ Semiconductor-related PDFs
For professional research & prior art discovery
inventor
  • 122+ full patent PDF documents of Semiconductor-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
NEW Power storage device control system, power storage system, and electrical appliance
May 25, 2017 - N°20170149253

Deterioration of a power storage device is reduced. Switches that control the connections of a plurality of power storage devices separately are provided. The switches are controlled with a plurality of control signals, so as to switch between charge and discharge of each of the power storage devices or between serial connection and parallel connection of the plurality of power ...
NEW Semiconductor device
May 25, 2017 - N°20170149214

A semiconductor device includes: a semiconductor layered structure including an active layer, a first region including a part of the active layer and extending in a layered direction, a second region including at least a part of an end portion of the active layer and extending in the layered direction, disordering of the second region being higher than the first ...
NEW Vertical cavity light emitting device
May 25, 2017 - N°20170149213

A vertical cavity light emitting device includes: a first multilayer film reflector; a semiconductor structure layer that is formed on the first multilayer film reflector and includes a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type opposite to the first conductivity type; an insulating current confinement layer formed on ...
NEW Semiconductor laser device
May 25, 2017 - N°20170149205

A semiconductor laser device of the present disclosure includes a cooling plate, an insulating sheet, a first cooling block, and a first semiconductor laser element. The conductive cooling plate includes a water supply passage and a drain passage. The insulating sheet is provided to the cooling plate, and includes a first through hole connected to the water supply passage and ...
NEW Semiconductor device
May 25, 2017 - N°20170149149

In a semiconductor device, a plurality of semiconductor units is electrically connected in parallel using a connecting device. The connecting device includes a first connecting unit and a second connecting unit. The first connecting unit is electrically connected to a control terminal of each semiconductor unit. The second connecting unit is electrically connected to a main terminal of each semiconductor ...
NEW Method of manufacturing a lithium ion battery
May 25, 2017 - N°20170149085

A method of manufacturing a lithium ion battery includes: attaching a lid to a first main surface of a first substrate, the lid including a conductive coves element; forming a cavity between the lid and the first substrate; forming an anode comprising a component made of a semiconductor material at the first substrate; forming a cathode at the lid; and ...
NEW Thin film transistor and manufacturing method thereof, array substrate, and display apparatus
May 25, 2017 - N°20170149003

This invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. This thin film transistor comprises an organic semiconductor layer and a source drain electrode layer, and further comprises a metal oxide insulating layer, wherein the metal oxide insulating layer is provided between the organic semiconductor layer and the source drain electrode ...
NEW Semiconductor Patent Pack
Download 122+ patent application PDFs
Semiconductor Patent Applications
Download 122+ Semiconductor-related PDFs
For professional research & prior art discovery
inventor
  • 122+ full patent PDF documents of Semiconductor-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
NEW Diketopyrrolopyrrole polymers for use in organic field effect transistors
May 25, 2017 - N°20170148992

The present invention relates to polymers comprising a repeating unit of the formula i, or iii and their use as organic semiconductor in organic devices, especially an organic field effect transistor (ofet), or a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming ...
NEW Diketopyrrolopyrrole polymers for use in organic field effect transistors
May 25, 2017 - N°20170148991

The present invention relates to polymers comprising a repeating unit of the formula i, or iii and their use as organic semiconductor in organic devices, especially an organic field effect transistor (ofet), or a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming ...
NEW Vapor deposition mask, frame-equipped vapor deposition mask, vapor deposition mask preparation body, and method for ...
May 25, 2017 - N°20170148989

A vapor deposition mask capable of correctly performing confirmation of whether a shape pattern of openings formed in a resin mask is normal or similar confirmation while satisfying both high definition and lightweight, a vapor deposition mask preparation body for obtaining the vapor deposition mask, a frame-equipped vapor deposition mask including the vapor deposition mask, and a method for producing ...
NEW Semiconductor apparatus and method for fabricating the same
May 25, 2017 - N°20170148986

A method for fabricating a semiconductor apparatus includes providing a semiconductor substrate, stacking a conductive layer, a variable resistance layer, and a sacrificial layer on the semiconductor substrate, etching the conductive layer, the variable resistance layer, and the sacrificial layer to form a pillar structure including a lower electrode, a variable resistor device, and a sacrificial layer pattern, removing the ...
NEW Semiconductor apparatus and method for fabricating the same
May 25, 2017 - N°20170148985

A semiconductor apparatus includes a variable resistor including a variable resistance layer, which is formed to surround on an inner surface of a resistive region, and an insert layer which is formed in the variable resistance layer and has a resistivity being different from that of the variable resistance layer.
NEW Semiconductor devices having insulating substrates and methods of formation thereof
May 25, 2017 - N°20170148981

In one embodiment, a method of forming a current sensor device includes forming a device region comprising a magnetic sensor within and/or over a semiconductor substrate. The device region is formed adjacent a front side of the semiconductor substrate. The back side of the semiconductor substrate is attached over an insulating substrate, where the back side is opposite the ...
NEW Vertical solid-state transducers having backside terminals and associated systems and methods
May 25, 2017 - N°20170148967

Vertical solid-state transducers (“ssts”) having backside contacts are disclosed herein. An sst in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the sst, a second semiconductor material at a second side of the sst opposite the first side, and an active region between the ...
NEW Surface-mountable semiconductor component and method for producing same
May 25, 2017 - N°20170148966

A surface-mountable semiconductor component and a method for producing the same are disclosed. In an embodiment the component includes an optoelectronic semiconductor chip, first and second contact elements and a molded body, wherein the chip includes a semiconductor body having a semiconductor layer sequence with an active region provided for producing and/or receiving electromagnetic radiation and arranged between a ...