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Semiconductor

Semiconductor-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Power-module device, power conversion device, and method for manufacturing power-module device
Hitachi, Ltd.
November 09, 2017 - N°20170325360

In order to efficiently cool a heat-generating semiconductor element, it is desirable to cool a power semiconductor element from both surfaces. Therefore, in order to cool multiple power semiconductor elements, it is an effective way to alternately arrange a semiconductor component having the incorporated semiconductor element and a cooling device. A power conversion device for handling a high-power voltage needs ...
Semiconductor device and manufacturing method therefor, and resin composition for forming flexible resin layer
Hitachi Chemical Company, Ltd.
November 09, 2017 - N°20170325336

Disclosed is a method for producing a semiconductor device including a circuit board having a flexible resin layer that encapsulates a circuit component. The method may include a step of immersing a flexible substrate in an encapsulant, drying the encapsulant, and thereby encapsulating the circuit component with the encapsulant; and a step of curing the encapsulant, and thereby forming a ...
Packaged semiconductor device having a shielding against electromagnetic interference and manufacturing process thereof
Stmicroelectronics S.r.l.
November 09, 2017 - N°20170325329

A packaged device has a die of semiconductor material bonded to a support. An electromagnetic shielding structure surrounds the die and is formed by a grid structure of conductive material extending into the support and an electromagnetic shield, coupled together. A packaging mass embeds both the die and the electromagnetic shield. The electromagnetic shield is formed by a plurality of ...
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Equalization circuit, semiconductor apparatus and semiconductor system using the same
Sk Hynix Inc.
November 09, 2017 - N°20170324593

An equalization circuit may include a buffer configured to sense an input signal according to a reference voltage. The equalization circuit may include a reference voltage generator configured to generate the reference voltage. The reference voltage may be changed in conformity with noise of the input signal.
Equalization circuit, semiconductor apparatus and semiconductor system using the same
Sk Hynix Inc.
November 09, 2017 - N°20170324592

An equalization circuit may include a buffer configured to sense an input signal according to a reference voltage. The equalization circuit may include a reference voltage generator configured to generate the reference voltage. The reference voltage may be changed in conformity with noise of the input signal.
Serializer, and semiconductor apparatus and system including the same
Sk Hynix Inc.
November 09, 2017 - N°20170324540

A serializer may be provided. The serializer may include a first data output circuit and a second data output circuit. The first data output circuit may provide first data to an output node in synchronization with a first phase clock and a second phase clock. The second data output circuit may provide second data to the output node in synchronization ...
Semiconductor Patent Pack
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Semiconductor Patent Applications
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  • 122+ full patent PDF documents of Semiconductor-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Semiconductor integrated circuit
Renesas Electronics Corporation
November 09, 2017 - N°20170324399

An object of the present invention is to reduce burden on a program for changing an operation mode of an internal circuit in accordance with an internal clock frequency without mounting a large-scale circuit in an lsi in which setting of the frequency of an internal clock can be dynamically changed. In an lsi including an internal clock generation circuit ...
Method, apparatus and system for back gate biasing for fd-soi devices
Globalfoundries Inc.
November 09, 2017 - N°20170324385

At least one method, apparatus and system disclosed involves providing semiconductor device having transistors comprising back gates and front gates. The semiconductor device comprises a signal processing unit for processing an input signal to provide an output signal. The signal processing unit includes a first transistor and a second transistor. The first transistor includes a first back gate electrically coupled ...
Load adaptable boost dc-dc power converter
Merus Audio Aps
November 09, 2017 - N°20170324321

A boost dc-dc power converter comprising a semiconductor switch arrangement comprising a plurality of series connected semiconductor switches. A first capacitor is connected between a first intermediate node of a first leg of the semiconductor switch arrangement and a second intermediate node of a second leg of the semiconductor switch arrangement. A control circuit is coupled to respective control terminals ...
Semiconductor device
Fuji Electric Co., Ltd.
November 09, 2017 - N°20170324316

There is provided a semiconductor device capable of decreasing a switching loss. The semiconductor device has first semiconductor elements (su)-(sw) and second semiconductor elements (sx)-(sz) connected in series, in which the first semiconductor element includes a low switching loss semiconductor element having a switching loss which is smaller than a switching loss of the second semiconductor ...
Output circuit with esd protection
Novatek Microelectronics Corp.
November 09, 2017 - N°20170324240

An output circuit with electrostatic discharge (esd) protection in a semiconductor chip includes a first metal oxide semiconductor (mos) transistor and a first resistor. The first mos transistor includes a first terminal coupled to an output pad of the semiconductor chip, a bulk terminal and a gate terminal. The first resistor is coupled between the bulk terminal of the first ...
Semiconductor laser incorporating an electron barrier with low aluminum content
Macom Technology Solutions Holdings, Inc.
November 09, 2017 - N°20170324219

A semiconductor laser may include a substrate, an active region, and an electron stopper layer. The electron stopper layer may include an aluminum gallium indium arsenide phosphide alloy. The aluminum gallium indium arsenide phosphide alloy may have an alxgayin(1-x-y)aszp(1-z) composition.
External cavity laser with reduced optical mode-hopping
Oracle International Corporation
November 09, 2017 - N°20170324218

An optical source is described. This optical source includes a semiconductor optical amplifier (with a semiconductor other than silicon) that provides an optical gain medium and that includes a reflector. Moreover the hybrid external cavity laser includes a photonic chip with: an optical waveguide that conveys an optical signal output by the semiconductor optical amplifier; and a ring resonator, having ...
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Semiconductor Patent Applications
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For professional research & prior art discovery
inventor
  • 122+ full patent PDF documents of Semiconductor-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Light module comprising a laser element
Valeo Vision
November 09, 2017 - N°20170324214

The invention relates to a light module including a semiconductor laser element emitting a laser beam in a first cone of light, a photoluminescent element, and an optical means for transforming the light coming from the photoluminescent element into an exit light beam. The optical means has a guiding portion arranged to guide at least a portion of the light ...
Microwave antenna apparatus, packing and manufacturing method
Sony Corporation
November 09, 2017 - N°20170324135

A microwave antenna apparatus includes: a redistribution layer including a carrier layer, a ground plane arranged on a first or second surface of the carrier layer, and a microstrip line arranged on the other one of the first or second surface of the carrier layer; a semiconductor element mounted on the first surface of the carrier layer and coupled to ...
Semiconductor light-emitting element
The University Of Tokyo
November 09, 2017 - N°20170324048

A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes first and second light-emitting layers; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a first base layer with a composition subject to stress strain ...
Semiconductor light-emitting element
The University Of Tokyo
November 09, 2017 - N°20170324047

A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a first light-emitting layer; a second light-emitting layer; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a base layer with composition subject to stress strain from the first semiconductor layer ...
Component with reduced stress forces in the substrate
Micronas Gmbh
November 09, 2017 - N°20170324028

A component with a magnetic field sensor. The electronic component is located in a semiconductor substrate or on the surface of the semiconductor substrate and is surrounded at least partially, preferably largely, by a trench in the semiconductor substrate. The trench is filled with a filling material.
Highly-integrated thermoelectric cooler
Research Triangle Institute
November 09, 2017 - N°20170324016

A method of forming a thermoelectric device structure and the resultant thermoelectric device structure. The method forms a first pattern of epitaxial thermoelectric elements of a first conductivity type on a first semiconductor substrate, forms a second pattern of epitaxial thermoelectric elements of a second conductivity type on a second semiconductor substrate, separates the epitaxial thermoelectric elements of the first ...
Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and ...
Micron Technology, Inc.
November 09, 2017 - N°20170324014

Solid-state transducers (“ssts”) and vertical high voltage ssts having buried contacts are disclosed herein. An sst die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The sst ...
Optoelectronic component and method of producing an optoelectronic component
Osram Opto Semiconductors Gmbh
November 09, 2017 - N°20170324012

An optoelectronic component includes a first lead frame section and a second lead frame section spaced apart from one another, and having an optoelectronic semiconductor chip arranged on the first lead frame section and the second lead frame section, wherein the first lead frame section and the second lead frame section respectively have an upper side, a lower side and ...
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