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Semiconductor patents



      
           
This page is updated frequently with new Semiconductor-related patent applications. Subscribe to the Semiconductor RSS feed to automatically get the update: related Semiconductor RSS feeds. RSS updates for this page: Semiconductor RSS RSS


Method for forming semiconductor layout patterns, semiconductor layout patterns, and semiconductor structure

Method for forming semiconductor layout patterns, semiconductor layout patterns, and semiconductor structure

Method for copy-protected storage of information on a data carrier

Method for copy-protected storage of information on a data carrier

Method for copy-protected storage of information on a data carrier

Semiconductor device

Date/App# patent app List of recent Semiconductor-related patents
11/13/14
20140337897
 Systems and methods for receiving and transferring video information patent thumbnailSystems and methods for receiving and transferring video information
Devices and methods for receiving and/or processing digital data. The devices may include a satellite modem, a transport module, and/or a processing module.
11/13/14
20140337809
 Method for forming semiconductor layout patterns, semiconductor layout patterns, and semiconductor structure patent thumbnailMethod for forming semiconductor layout patterns, semiconductor layout patterns, and semiconductor structure
A method for forming semiconductor layout patterns providing a pair of first layout patterns being symmetrical along an axial line, each of the first layout patterns comprising a first side proximal to the axial line and a second side far from the axial line; shifting a portion of the first layout patterns toward a direction opposite to the axial line to form at least a first shifted portion in each first layout pattern, and outputting the first layout patterns and the first shifted portions on a first mask.. .
11/13/14
20140337631
 Method for copy-protected storage of information on a data carrier patent thumbnailMethod for copy-protected storage of information on a data carrier
A method for storing digital data information on a data carrier and for reading the information therefrom uses a disk having an individual digital identifier. A signature is formed, and the information includes information items, which can be processed by a first electronic data processing device only if the identifier and the signature are in a predefined relation to one another.
11/13/14
20140337603
 Semiconductor device patent thumbnailSemiconductor device
An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix.
11/13/14
20140337574
 Memory system, semiconductor memory device and operating method thereof patent thumbnailMemory system, semiconductor memory device and operating method thereof
Disclosed are a memory system, a semiconductor memory device and a method of operating the same. The memory system includes: a memory controller to output a command, address and data; and a semiconductor memory device to store at least one page data in each memory cell in response to the command, the address and the data, the memory controller to separately output first address used for determining the at least one page data from the data and second address used for determining a word line coupled to at least one memory cell..
11/13/14
20140337567
 Storage device including flash memory and capable of predicting storage device performance based on performance parameters patent thumbnailStorage device including flash memory and capable of predicting storage device performance based on performance parameters
A storage device includes a semiconductor memory storing data. A controller instructs to write data to the semiconductor memory in accordance with a request the controller receives.
11/13/14
20140337395
 Semiconductor memory device and random number generator patent thumbnailSemiconductor memory device and random number generator
According to one embodiment, semiconductor memory device and a random number generator includes a semiconductor memory device includes: a semiconductor memory 30, a random number generator 10 generating a random number sequence, and a data writing unit 20 storing data in the semiconductor memory 30 using the random number sequence. The random number generator 10 includes: a random number generating unit generating an m-bit random number sequence; a coefficient selecting unit outputs a first coefficient or a second coefficient to the random number generating unit; and a bit selecting unit which outputs the random number sequence obtained by selecting n bits from m-bit random number sequence output from the random number generating unit..
11/13/14
20140336952
 Gas discriminating semiconductor sensors patent thumbnailGas discriminating semiconductor sensors
Sensing particular gases in a mixture uses precise modulated heating. Sensor relative responses are compared at different temperatures and compared with known relative responses to identify gases and concentrations.
11/13/14
20140335800
 Semiconductor device, antenna switch circuit, and radio communication apparatus patent thumbnailSemiconductor device, antenna switch circuit, and radio communication apparatus
A semiconductor device includes: a laminated body including a channel layer that is configured of a compound semiconductor; and at least one gate electrode that is provided on a top surface side of the laminated body, wherein the laminated body includes a first low-resistance region that is provided on the top surface side of the laminated body, the first low-resistance region facing the at least one gate electrode, and a second low-resistance region that is provided externally of the first low resistance region on the top surface side of the laminated body, the second low-resistance region being continuous with the first low-resistance region.. .
11/13/14
20140335701
 Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium patent thumbnailMethod of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
A thin film containing boron and a borazine ring structure is formed on a substrate by performing a cycle a predetermined number of times under a condition where the borazine ring structure is preserved in a borazine compound. The cycle includes: supplying a source gas containing boron and a halogen element to the substrate; and supplying a reactive gas including a borazine compound to the substrate..
11/13/14
20140335698
Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
A component of a plasma processing chamber having a protective liquid layer on a plasma exposed surface of the component. The protective liquid layer can be replenished by supplying a liquid to a liquid channel and delivering the liquid through liquid feed passages in the component.
11/13/14
20140335695
External uv light sources to minimize asymmetric resist pattern trimming rate for three dimensional semiconductor chip manufacture
Embodiments of the present invention provide an apparatus and methods for forming stair-like structures in manufacturing three dimensional (3d) stacking of semiconductor chips. In one embodiment, a method of forming stair-like structures on a substrate includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process, wherein the trimming process further comprises supplying a trimming gas mixture including at least an oxygen containing gas, and providing a light energy in the trimming gas mixture to an edge of the substrate during the trimming process..
11/13/14
20140335690
Semiconductor device and method for manufacturing the same
A semiconductor device includes: a contact hole formed over a structure including a conductive pattern; a contact plug formed in the contact hole; a first metal silicide film surrounding the contact plug; and a second metal silicide film formed over the contact plug.. .
11/13/14
20140335689
Method of fabricating a semiconductor interconnect structure
A method for forming a semiconductor interconnect structure includes forming a dielectric layer on a substrate and patterning the dielectric layer to form an opening therein. A metal layer fills the opening and covers the dielectric layer.
11/13/14
20140335687
Method of making a conductive pillar bump with non-metal sidewall protection structure
A method of making a semiconductor device includes forming an under bump metallurgy (ubm) layer over a substrate, the ubm layer comprising sidewalls and a surface region. The method further includes forming a conductive pillar over the ubm layer, the conductive pillar includes sidewalls, wherein the conductive pillar exposes the surface region of the ubm layer.
11/13/14
20140335684
Manufacturing method and manufacturing apparatus of semiconductor device
A manufacturing method for a semiconductor device includes implanting dopants into a silicon carbide substrate, applying a carbon-containing material on at least one surface of the silicon carbide substrate, and heating the silicon carbide substrate having the carbon-containing material applied thereon to form a carbon layer on surfaces of the silicon carbide substrate. The heating is performed in a non-oxidizing atmosphere, and is followed by another heating step for activating the dopants..
11/13/14
20140335682
Semiconductor device and manufacturing method thereof
A semiconductor device according to an embodiment includes a first-conductive-type semiconductor substrate; a first-conductive-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductive-type second semiconductor layer epitaxially formed on the first semiconductor layer; and a second-conductive-type third semiconductor layer epitaxially formed on the second semiconductor layer, and having an impurity concentration higher than that of the second semiconductor layer. The semiconductor device also includes a recess formed in the third semiconductor layer, and at least a corner portion of a side face and a bottom surface is located in the second semiconductor layer.
11/13/14
20140335676
Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.. .
11/13/14
20140335674
Manufacturing method of semiconductor device
A manufacturing method of a semiconductor device is provided. The method includes at least the following steps.
11/13/14
20140335673
Methods of manufacturing finfet semiconductor devices using sacrificial gate patterns and selective oxidization of a fin
A method of manufacturing a semiconductor device includes patterning a substrate to form an active fin, forming a sacrificial gate pattern crossing over the active fin on the substrate, forming an interlayer insulating layer on the sacrificial gate pattern, removing the sacrificial gate pattern to form a gap region exposing the active fin in the interlayer insulating layer, and oxidizing a portion of the active fin exposed by the gap region to form an insulation pattern between the active fin and the substrate.. .
11/13/14
20140335672
Process for manufacturing semiconductor transistor device
A process for manufacturing a semiconductor transistor device is provided. The process comprises steps of providing a substrate; forming a patterned hard mask on the substrate; forming a spacer on a sidewall of the patterned hard mask; forming a trench by removing a portion of the substrate not being covered by the patterned hard mask and the spacer; and filling a conductive material into the trench..
11/13/14
20140335671
Non-volatile memory having 3d array of read/write elements with vertical bit lines and select devices and methods thereof
A three-dimensional memory is formed as an array of memory elements that are formed across multiple layers of planes positioned at different distances above a semiconductor substrate. The memory elements reversibly change a level of electrical conductance in response to a voltage difference being applied across them.
11/13/14
20140335670
Semiconductor device including finfet and diode having reduced defects in depletion region
A semiconductor device comprises a first substrate portion and a second substrate portion disposed a distance away from the first substrate portion. The first substrate portion includes a first active semiconductor layer defining at least one semiconductor fin and a first polycrystalline layer formed directly on the fin.
11/13/14
20140335668
Contact landing pads for a semiconductor device and methods of making same
A method of forming a conductive contact landing pad and a transistor includes forming first and second spaced-apart active regions in a semiconducting substrate, forming a layer of gate insulation material on the first and second active regions, and performing an etching process to remove the layer of gate insulation material formed on the second active region so as to thereby expose the second active region. The method further includes performing a common process operation to form a gate electrode structure above the layer of gate insulation material on the first active region for the transistor and the conductive contact landing pad that is conductively coupled to the second active region, and forming a contact to the conductive contact landing pad..
11/13/14
20140335667
Semiconductor device
A semiconductor device includes an active area having a source and a gate. A gate metal contact is deposited above and forms an electrical contact with the gate and a source metal contact is deposited above and forms an electrical contact with the source.
11/13/14
20140335665
Low extension resistance iii-v compound fin field effect transistor
A gate stack including a gate dielectric and a gate electrode is formed over at least one compound semiconductor fin provided on an insulating substrate. The at least one compound semiconductor fin is thinned employing the gate stack as an etch mask.
11/13/14
20140335663
Method of making a transitor
A method for manufacturing a transistor includes forming a stack of semiconductor on insulator type layers including at least one substrate, surmounted by a first insulating layer and an active layer to form a channel for the transistor; forming a gate stack on the active layer; producing a source and a drain including forming, on either side of the gate stack, cavities by at least one step of etching the active layer, the first insulating layer, and part of the substrate selectively to the gate stack to remove the active layer, the first insulating layer, and a portion of the substrate outside regions situated below the gate stack; forming a second insulating layer on the bared surfaces of the substrate, to form a continuous insulating layer with the first insulating layer; baring of the lateral ends of the channel; and the filling of the cavities by epitaxy.. .
11/13/14
20140335659
Method of manufacturing semiconductor device
A semiconductor device includes a first semiconductor chip including a first surface, a second surface and a first terminal arranged on the first surface, a second semiconductor chip including a first surface, a second surface and a second terminal arranged on the first surface of the second semiconductor chip, a support substrate including a first surface bonded to the second surfaces of the first semiconductor chip and the second semiconductor chip, and an isolation groove formed on the first surface of the support substrate. The isolation includes a pair of side surfaces continuously extending from opposing side surfaces of the first semiconductor chip and the second semiconductor chip, respectively, and the isolation groove is formed into the support substrate to extend from the first surface of the support substrate.
11/13/14
20140335658
Semiconductor device and method of land grid array packaging with bussing lines
A semiconductor device and method of making a semiconductor device is described. An embedded die panel comprising a plurality of semiconductor die separated by saw streets is provided.
11/13/14
20140335657
Stack packages having fastening element and halogen-free inter-package connector
A stack package includes a lower package including a lower package substrate and a lower semiconductor chip disposed on the lower package substrate, an upper package including an upper package substrate and an upper semiconductor chip disposed on the upper package substrate, a fastening element formed between a top surface of the lower semiconductor chip and a bottom surface of the upper package substrate, and a halogen-free inter-package connector connecting the lower package substrate to the upper package substrate.. .
11/13/14
20140335656
Semiconductor stack packages and methods of fabricating the same
Semiconductor chip stacks are provided. The semiconductor chip stack includes a semiconductor chip stack including a plurality of first semiconductor chips vertically stacked on a top surface of the interposer, a second semiconductor chip stacked on a bottom surface of the interposer opposite to the semiconductor chip stack, and an external electrode attached to a top surface of the second semiconductor chip opposite to the interposer.
11/13/14
20140335654
Method and apparatus for semiconductor device fabrication using a reconstituted wafer
Method and apparatus for semiconductor device fabrication using a reconstituted wafer is described. In one embodiment, diced semiconductor chips are placed within openings on a frame.
11/13/14
20140335653
Transistor, liquid crystal display device, and manufacturing method thereof
Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity.
11/13/14
20140335652
Semiconductor device and method for manufacturing the same
A miniaturized semiconductor device including a transistor in which a channel formation region is formed using an oxide semiconductor film and variation in electric characteristics due to a short-channel effect is suppressed is provided. In addition, a semiconductor device whose on-state current is improved is provided.
11/13/14
20140335651
Inks and pastes for solar cell fabrication
A silicon solar cell is formed with an n-type silicon layer on a p-type silicon semiconductor substrate. An aluminum ink composition is printed on the back of the silicon wafer to form back contact electrodes.
11/13/14
20140335649
Compound semiconductor precursor ink composition, method for forming a chalcogenide semiconductor film, and method for forming a photovoltaic device
A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film..
11/13/14
20140335644
Method for producing spot size converter
A method for producing a spot size converter includes the steps of forming a first insulator mask on a stacked semiconductor layer; forming first and second terraces, and a waveguide mesa disposed between the first and second terraces by etching the stacked semiconductor layer using the first insulator mask, the first terrace having first to fourth terrace portions, the second terrace having fifth to eighth terrace portions, the waveguide mesa having first to fourth mesa portions; forming a second insulator mask including a first pattern on the first terrace portion, a second pattern on the fifth terrace portion, a third pattern on the third and fourth mesa portions, and a fourth pattern that integrally covers a region extending from the fourth terrace portion to the eighth terrace portion through the fourth mesa portion; and selectively growing a semiconductor layer by using the second insulator mask.. .
11/13/14
20140335634
Mold release film and method of process for producing a semiconductor device using the same
A mold release film, which is adapted to be disposed on the cavity surface of a mold to form a resin-encapsulated portion by encapsulating a semiconductor element of a semiconductor device with a curable encapsulation resin, has a tensile modulus of elasticity of from 10 to 24 mpa at 132° c. As measured in accordance with jis k 7127, and a peak peel resistance of at most 0.8 n/25 mm..
11/13/14
20140335632
Manufacturing method of semiconductor device, and semiconductor device
Provided is a semiconductor device that suppresses the occurrence of defects due to photocorrosion. A method for manufacturing the semiconductor device includes the steps of: forming an insulating layer with a concave portion over a substrate; forming a conductive film over the insulating film and the inside of the concave portion; polishing and removing the conductive film positioned over the insulating layer; and cleaning the insulating layer in a light-shielded state.
11/13/14
20140335631
Semiconductor defect characterization
The defect-containing die identified from an inspection layer analysis subsequent to a manufacturing step for a wafer including a plurality of die and as well as the faulty die identified from a fault testing of the wafer are processed to identify a subset of the die that both contain a defect and are faulty. A probability analysis is performed to determine a confidence level of whether the die in the subset are faulty due to their defects..
11/13/14
20140335453
Method for producing resist composition
Provided by the present invention is a method for producing a resist composition, especially a silicon-containing resist underlayer film composition, with fewer film defects, the composition used in immersion exposure, double patterning, development by an organic solvent, and so forth. Specifically, provided is a method for producing a resist composition to be used for manufacturing a semiconductor device, wherein the resist composition is filtered using a filter which filters through 5 mg or less of an eluate per unit surface area (m2) in an extraction using an organic solvent..
11/13/14
20140335447
Composition for hardmask, method of forming patterns using the same, and semiconductor integrated circuit device including the patterns
A composition for a hardmask including copolymer including repeating units represented by chemical formulae 1 and 2 and a solvent, a method of forming a pattern using the same, and a semiconductor integrated circuit device including a pattern formed using the method are provided.. .


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Semiconductor topics: Semiconductor, Semiconductor Substrate, Semiconductor Device, Semiconductor Material, Electric Conversion, Conductive Layer, Molybdenum, Camera Module, Semiconductor Devices, Semiconductors, Integrated Circuit, Surfactant, Photoelectric Conversion, Electronic Device, Transparent Conductive Oxide

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This listing is a sample listing of patent applications related to Semiconductor for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Semiconductor with additional patents listed. Browse our RSS directory or Search for other possible listings.
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