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Semiconductor

Semiconductor-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Populated printed circuit board and method for populating a printed circuit board
Borgwarner Ludwigsburg Gmbh
September 14, 2017 - N°20170265305

Disclosed is a printed circuit board having at least one power semiconductor soldered thereon and, as a thermal fuse, a spring having two contact arms fastened to solder pads of the printed circuit board by soldered connections. The spring is under mechanical stress such that at least one of the two contact arms moves away from one of the solder ...
Dc detection circuit and operational method of the same, semiconductor apparatus, and audio signal output ...
Rohm Co., Ltd.
September 14, 2017 - N°20170265000

The dc detection circuit includes: a or circuit configured to generate a logical or flag on the basis of logical or of values of x bits from a (msb-1)th bit to a (msb-x)th bit of input data; a nand circuit configured to generate a nand flag on the basis of a nand of values of x bits from ...
Wearable electronic module and attachment system
Sentrix Technology Limited
September 14, 2017 - N°20170264978

The present invention provides a novel wearable sensor module system. According to an embodiment, the novel wearable sensor module system includes a wearable electronic sensor module, a multi-layer conductive fabric at least a magnetic fixture, and at least a metallic fixture, wherein said multi-layer fabric makes contact with the metallic fixtures for providing a stable and durable electronic signal communication ...
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Semiconductor device, ramp signal control method, image data generating method, and camera system
Renesas Electronics Corporation
September 14, 2017 - N°20170264847

Conventional semiconductor devices disadvantageously failed to sufficiently enlarge a dynamic range. A semiconductor device according to an embodiment includes a plurality of registers 21 to 26 that sets a gradient of a ramp signal. In the semiconductor device, the values in the registers 24 to 26 that are reflected in the gradient of the ramp signal are switched at predetermined timings, whereby a ramp ...
Semiconductor integrated circuit and image capturing apparatus
Ricoh Company, Ltd.
September 14, 2017 - N°20170264844

A semiconductor integrated circuit includes multiple signal processing circuits including a constant current source, a first bias source that generates first bias voltage, a second bias source that generates second bias voltage, a first bias circuit that supplies a first reference current to the first bias source, a second bias circuit that supplies a second reference current to the second ...
Imaging device
Panasonic Intellectual Property Management Co., Ltd.
September 14, 2017 - N°20170264840

An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, ...
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Semiconductor Patent Applications
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  • 122+ full patent PDF documents of Semiconductor-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Method and system for an analog crossbar architecture
Maxlinear, Inc.
September 14, 2017 - N°20170264569

Methods and systems for an analog crossbar may comprise, in a wireless device comprising a receiver path with an analog crossbar: receiving a digital signal comprising a plurality of channels; amplifying the received signal; converting the amplified signal to an analog signal; separating the analog signal into a plurality of separate channels; and routing the plurality of separate channels to ...
Semiconductor device and operating method of semiconductor device
Samsung Electronics Co., Ltd.
September 14, 2017 - N°20170264334

Provided are a semiconductor device and an operating method thereof. The semiconductor device includes a mode controller configured to output a first control signal in a first communication mode, and output a second control signal in a second communication mode which is different from the first communication mode; and a configurable circuit configured to generate a first output signal to ...
Semiconductor integrated circuit device and wireless communication apparatus
Kabushiki Kaisha Toshiba
September 14, 2017 - N°20170264333

According to one embodiment, a semiconductor integrated circuit device includes an oscillator, a frequency divider, and a control circuit. The oscillator is configured to oscillate at a variable oscillation frequency. The frequency divider is configured to oscillate at a variable free-running oscillation frequency, and has a frequency dividing range that transitions according to a variation in the free-running oscillation frequency. ...
Semiconductor device
Kabushiki Kaisha Toshiba
September 14, 2017 - N°20170264298

According to one embodiment, in a semiconductor device, a connection block includes multiple unit configurations, in each of which a first line extends along a first direction. A second line is placed above the first line and extends along a second direction which intersects with the first direction. A first variable resistance element has one end electrically connected to the ...
Input-output receiver
Semiconductor Manufacturing International (beijing ) Corporation
September 14, 2017 - N°20170264297

An input-output (i/o) receiver includes a receiving terminal, a first n-type metal-oxide-semiconductor (nmos) transistor, a reformation circuit, and a compensation unit. The receiving terminal is coupled with an external voltage signal. The first nmos transistor has a source electrode coupled with the receiving terminal and a gate electrode coupled with a first power supply voltage. The reformation circuit is ...
Semiconductor integrated circuit
Kabushiki Kaisha Toshiba
September 14, 2017 - N°20170264290

A semiconductor integrated circuit includes an output circuit driven by a power voltage across a first and a second node. A control circuit is driven by the power voltage to control output a digital signal at a pad terminal, a logic value of the signal being set by a core circuit connected to the output circuit. The digital signal causes ...
Integrated high-side driver for p-n bimodal power device
Texas Instruments Incorporated
September 14, 2017 - N°20170264289

An integrated circuit chip includes a bimodal power n-p-laterally diffused metal oxide semiconductor (ldmos) device having an n-gate coupled to receive an input signal and a level shifter coupled to receive the input signal and to provide a control signal to a p-gate driver of the n-p-ldmos device. A method of operating an n-p-ldmos power device is also disclosed.
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Semiconductor Patent Applications
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  • 122+ full patent PDF documents of Semiconductor-related inventions.
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Switching circuit
Toyota Jidosha Kabushiki Kaisha
September 14, 2017 - N°20170264282

A switching circuit disclosed, herein, includes a main mosfet 12, a control mosfet 14, and a diode 16. The main mosfet is formed in a sic semiconductor layer. A channel type of the main mosfet is a first conductivity type. A channel type of the control mosfet is a second conductivity type. A source of the control mosfet is connected to-a gate of ...
Semiconductor device, charge pump circuit, semiconductor system, vehicle, and control method of semiconductor device
Renesas Electronics Corporation
September 14, 2017 - N°20170264280

A semiconductor device capable of preventing deterioration of a transistor caused by a flow of an overcurrent is provided. According to an embodiment, a semiconductor chip includes a first transistor provided between a high-potential side voltage terminal to which a constant voltage generated by reducing a power-supply voltage is supplied and an output terminal, a second transistor provided between a ...
Thin-film bulk acoustic resonator, semiconductor apparatus comprising of such an acoustic resonator, and manufacture thereof
Semiconductor Manufacturing International (beijing) Corporation
September 14, 2017 - N°20170264264

A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing method are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and second ...
Thin-film bulk acoustic resonator, semiconductor apparatus comprising of such an acoustic resonator, and manufacture thereof
Semiconductor Manufacturing International (beijing) Corporation
September 14, 2017 - N°20170264263

A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing methods are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and the ...
Inverter drive device and semiconductor module
Fuji Electric Co., Ltd.
September 14, 2017 - N°20170264230

An inverter drive device for driving a semiconductor switching element that controls an output current of an inverter. An inverter drive device includes a drive circuit configured to apply a drive voltage to the semiconductor switching element, to thereby turn the semiconductor switching element on and off, the turning off of the semiconductor switching element causing a counter electromotive force ...
Improvements in or relating to electrical assemblies for voltage source sub-modules
General Electric Technology Gmbh
September 14, 2017 - N°20170264208

An electrical assembly for a voltage source sub-module is provided, which comprises a first semiconductor device module which includes a plurality of first semiconductor devices. The electrical assembly also includes an energy storage device which in turn includes a plurality of energy storage sections that are configured to control the magnitude of a current portion flowing through each first semiconductor ...
Boost chopper circuit
Fuji Electric Co., Ltd.
September 14, 2017 - N°20170264197

In a boost chopper circuit, a distance between a plurality of first mounting portions of a first semiconductor package that houses a switching device circuit and a distance between a plurality of second mounting portions of a second semiconductor package that houses a backflow prevention diode circuit are different from each other.
Semiconductor integrated circuit
Kabushiki Kaisha Toshiba
September 14, 2017 - N°20170264196

According to one embodiment, in a semiconductor integrated circuit, a first input terminal of an error amplifier is electrically connected to a third node between a second node and a reference potential. A second input terminal of the error amplifier is electrically connected to a reference voltage. An output terminal of the error amplifier is electrically connected to a gate ...
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