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Semiconductor

Semiconductor-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Multilayer wiring board for an electronic device
Invensas Corporation
June 15, 2017 - N°20170171986

An electronic assembly is disclosed that includes a flexible insulating film, a semiconductor component that has a thickness of less than 50 micrometers, a conductive interconnect extending through the flexible insulating film, a second patterned metal wiring film adjacent, and a third patterned metal wiring film. The second patterned metal wiring film is electrically coupled with the third patterned metal wiring ...
Solid-state imaging element and camera system
Sony Corporation
June 15, 2017 - N°20170171488

A solid-state imaging element that includes a plurality of semiconductor layers stacked, a plurality of stack-connecting parts for electrically connecting the plurality of semiconductor layers, a pixel array part in which pixel cells that include a photoelectric conversion part and a signal output part are arrayed in a two-dimensional shape, and an output signal line through which signals from the ...
Solid-state imaging device
Olympus Corporation
June 15, 2017 - N°20170171484

There are provided a first semiconductor substrate in which a plurality of photoelectric conversion circuits, which are some circuit elements of the pixel cells including the photoelectric conversion unit, are formed in a two-dimensional matrix, a second semiconductor substrate in which a plurality of memory circuits, which are some other circuit elements of the pixel cells, are formed in a ...
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Image reading apparatus and semiconductor device
Seiko Epson Corporation
June 15, 2017 - N°20170171419

An image reading apparatus includes a light receiving element configured to receive light from an image to perform photoelectric conversion, an amplification unit configured to amplify a signal generated by the photoelectric conversion, a switch element electrically connected to first and second ends of the amplification unit to be in parallel with the amplification unit, and a capacitor. The capacitor ...
On-chip test interface for voltage-mode mach-zehnder modulator driver
Futurewei Technologies, Inc.
June 15, 2017 - N°20170170894

An apparatus comprising a semiconductor chip that comprises an optical modulator configured to modulate an optical signal based on a received driver signal, a voltage-mode (vm) driver coupled to the optical modulator and configured to produce a level-shifted driver signal to modulate the optical signal, and a two-stage test interface coupled to the optical modulator and configured to receive and ...
Semiconductor device
Semiconductor Energy Laboratory Co., Ltd.
June 15, 2017 - N°20170170828

It is an object to provide a semiconductor device in which power consumption can be reduced. It is another object to provide a highly reliable semiconductor device using a programming cell, such as a programmable logic device (pld). In accordance with a change in a configuration of connections between basic blocks, power supply voltage furnishing to the basic blocks is ...
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Semiconductor Patent Applications
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inventor
  • 122+ full patent PDF documents of Semiconductor-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Current measurement in a power semiconductor device
Infineon Technologies Ag
June 15, 2017 - N°20170170823

A semiconductor device includes a first load terminal, a second load terminal and a semiconductor body coupled to the first load terminal and the second load terminal. The semiconductor body is configured to conduct a load current along a load current path between the first load terminal and the second load terminal. The semiconductor device further includes a control electrode ...
Driving circuit and semiconductor module
Fuji Electric Co., Ltd.
June 15, 2017 - N°20170170820

Provided is a driving circuit for driving a switching element in accordance with an input signal. The driving circuit includes a driving unit connected to a control terminal of the switching element, where the driving unit is configured to switch, in accordance with the input signal, which one of a source current and a sink current is to be fed ...
Semiconductor device and electric power control apparatus
Renesas Electronics Corporation
June 15, 2017 - N°20170170819

A driver ic includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense mos that is arranged between a floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault ...
Method and system for reliable bootstrapping switches
Maxlinear, Inc.
June 15, 2017 - N°20170170818

Methods and systems for reliable bootstrapping switches may comprise sampling a received signal with a bootstrapping switch, where the bootstrapping switch comprises a switching metal-oxide semiconductor (mos) transistor having a pull-down path coupled to a gate terminal of the switching mos transistor, wherein: source terminals of both a diode-connected transistor and a second mos transistor are coupled to the gate ...
Dual trench deep trench based unreleased mems resonators
Maxlinear, Inc.
June 15, 2017 - N°20170170805

A deep trench (dt) mems resonator includes a periodic array of unit cells, each of which includes a single dt formed in a semiconductor substrate and filled with a material whose acoustic impedance is different than that of the substrate. The filled dt is used as both an electrical capacitor and a mechanical structure at the same time, making it ...
Motor starter apparatus with start-up fault detection capability
Eaton Corporation
June 15, 2017 - N°20170170772

A motor starter apparatus includes at least one semiconductor switch configured to selectively couple a power source to a motor, at least one current sensor configured to generate a current sense signal indicative of a current provided via the at least one semiconductor switch, and a control circuit coupled to the at least one current sensor and configured to cause ...
Switched-capacitor converters with low-voltage gate drivers
Arctic Sand Technologies, Inc.
June 15, 2017 - N°20170170725

A power-conversion apparatus includes active-semiconductor switches configured to transition between first and second states that result in corresponding first and second electrical interconnections between capacitors and at least one of first and second terminals configured to be coupled to first and second external circuits at corresponding first and second voltages, a pre-charge circuit coupled to at least one of the ...
Semiconductor Patent Pack
Download 122+ patent application PDFs
Semiconductor Patent Applications
Download 122+ Semiconductor-related PDFs
For professional research & prior art discovery
inventor
  • 122+ full patent PDF documents of Semiconductor-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Foldable fabric-based packaging solution
Intel Corporation
June 15, 2017 - N°20170170676

Methods, systems, and apparatuses for a foldable fabric-based semiconductor package (ffp) that can assist with charging a secondary cell are described. An ffp includes: a ground plane; a first component over the ground plane; a second component adjacent to the ground plane; a third component adjacent to the second component; a molding compound encapsulating the ground plane, the first component, ...
Operating method of full-bridge modular multilevel converter boosting ac voltages
Huazhong University Of Science And Technology
June 15, 2017 - N°20170170660

Provided is an operating method of a full-bridge sub-module (fbsm)-based modular multilevel converter for hvdc transmission with ac-side voltage boosting. The peak value of the ac-side voltage is increased under a constant dc-link voltage by using fbsm's negative output voltage under steady state, wherein keeping the semiconductor's current rating constant during ac-side voltage boosting is in favor of reducing ...
Electronic circuit breaker
Ellenberger & Poensgen Gmbh
June 15, 2017 - N°20170170654

An electronic circuit breaker with a semiconductor switch, a drain connection and a source connection of the semiconductor switch being connected between a voltage input and a load output, and a gate connection of said semiconductor switch being connected to a control device which is supplied, at the input end, with a signal which represents the load current. The control ...
Semiconductor device
Fuji Electric Co., Ltd.
June 15, 2017 - N°20170170647

A first sense resistor is connected between a fourth terminal of a power source potential of a high-potential region and a first terminal of a ground potential. A second sense resistor is connected between a third terminal of a reference potential of the high-potential region and the first terminal. A comparator is disposed in a low-potential region and uses the ...
Method for producing quantum cascade laser and quantum cascade laser
Sumitomo Electric Industries, Ltd.
June 15, 2017 - N°20170170634

A method for producing a quantum cascade laser includes the steps of growing a stacked semiconductor layer including a core layer; forming an insulating mask on the stacked semiconductor layer; forming a mesa structure including the core layer by etching the stacked semiconductor layer through the insulating mask; growing a buried layer on a side surface of the mesa structure ...
Method for producing quantum cascade laser and quantum cascade laser
Sumitomo Electric Industries, Ltd.
June 15, 2017 - N°20170170633

A method for producing a quantum cascade laser includes the steps of forming a laser structure including a mesa structure and a buried region embedding the mesa structure; forming a mask on the laser structure, the mask including a first pattern that defines a λ/4 period distribution bragg reflector structure and a second pattern that defines a 3λ/4 ...
Small aperture formation for facilitating optoelectronic device integration with defective semiconductor materials
International Business Machines Corporation
June 15, 2017 - N°20170170632

In one example, a device includes a layered semiconductor material having material defects formed therein and an optoelectronic device formed in the layered semiconductor material. The optoelectronic device includes an active region comprising an aperture formed through the layered semiconductor material. The aperture is formed in a manner that avoids intersection with the material defects.
Semiconductor light-emitting element
Photonics Electronics Technology Research Association
June 15, 2017 - N°20170170630

According to one embodiment, a semiconductor light-emitting element includes a ring-shaped light-emitting portion provided on a substrate, a mode-control light waveguide of si provided on an upper or a lower surface side of the light-emitting portion, and including at least two portions located close to the light-emitting portion, and an output light waveguide of si provided on the upper or ...
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