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Semiconductor Substrate

Semiconductor Substrate-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Solid-state imaging device, manufacturing method thereof, camera, and electronic device
Sony Corporation
August 17, 2017 - N°20170237916

A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading ...
Solar cell and method of manufacturing the same
Lg Electronics Inc.
August 17, 2017 - N°20170236972

A method of manufacturing a solar cell is disclosed. The method includes forming a control passivation layer on a back surface of a semiconductor substrate containing impurities of a first conductivity type, forming an emitter region containing impurities of a second conductivity type opposite the first conductivity type and a back surface field region containing impurities of the first conductivity ...
Laser irradiation aluminum doping for monocrystalline silicon substrates
Solexel, Inc.
August 17, 2017 - N°20170236969

Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction ...
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Solar cell module
Kyocera Corporation
August 17, 2017 - N°20170236964

A solar cell module comprises a solar cell element, first and second connection tabs, and first and second solder portions. The solar cell element includes a semiconductor substrate, a front busbar electrode, and a back busbar electrode. The first solder portion connects the front busbar electrode and the first connection tab. The second solder portion connects the back busbar electrode ...
Flat top laser beam processing for making a solar cell substrate
Solexel, Inc.
August 17, 2017 - N°20170236961

Flat top beam laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, back surface field formation, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques ...
Structure and formation method of semiconductor device structure
Taiwan Semiconductor Manufacturing Company, Ltd.
August 17, 2017 - N°20170236939

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a gate dielectric layer, a work function layer, and a conductive filling over the work function layer. The semiconductor device structure also ...
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Semiconductor Substrate Patent Applications
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Semiconductor device comprising a temperature sensor, temperature sensor and method of manufacturing a semiconductor device ...
Infineon Technologies Ag
August 17, 2017 - N°20170236931

A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a source contact, the source contact including a first and second source contact portion, and a gate electrode in a gate trench in the first main surface adjacent to a body region. The body region and a drift zone ...
Semiconductor device with selectively etched surface passivation
Nxp Usa, Inc.
August 17, 2017 - N°20170236929

A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of ...
Semiconductor device and method of manufacturing semiconductor device
Fuji Electric Co., Ltd.
August 17, 2017 - N°20170236927

A semiconductor device, including a first groove, a second groove and a first impurity region provided on a semiconductor substrate, a second impurity region provided in the first impurity region, a gate electrode provided in the first groove, a first insulating film provided between the first groove and the gate electrode, a second insulating film provided in the second groove, ...
Semiconductor device
Fuji Electric Co., Ltd.
August 17, 2017 - N°20170236926

Provided is a semiconductor device comprising: a semiconductor substrate; a plurality of gate trench sections formed in the semiconductor substrate; and a plurality of emitter trench sections formed in the semiconductor substrate, one or more emitter trench sections provided in each region between adjacent gate trench sections of the plurality of gate trench sections, wherein the semiconductor device includes at ...
Systems and methods for in-situ doped semiconductor gate electrodes for wide bandgap semiconductor power devices
General Electric Company
August 17, 2017 - N°20170236915

In an embodiment, a wide bandgap semiconductor power device, includes a wide bandgap semiconductor substrate layer; an epitaxial semiconductor layer disposed above the wide bandgap semiconductor substrate layer; a gate dielectric layer disposed directly over a portion of the epitaxial semiconductor layer; and a gate electrode disposed directly over the gate dielectric layer. The gate electrode includes an in-situ doped ...
Spatial terahertz wave phase modulator based on high electron mobility transistor
University Of Electronic Science And Technology Of China
August 17, 2017 - N°20170236912

A spatial terahertz wave phase modulator based on the high electron mobility transistor is provided. The phase modulator combines the quick-response high electron mobility transistor with a novel metamaterial resonant structure, so as to rapidly modulate terahertz wave phases in a free space. The phase modulator includes a semiconductor substrate, an hemt epitaxial layer, a periodical metamaterial resonant structure and ...
Methods of manufacturing a power mosfet
Infineon Technologies Austria Ag
August 17, 2017 - N°20170236910

A method of manufacturing a power metal oxide semiconductor field effect transistor includes: forming a field electrode in a field plate trench in a main surface of a semiconductor substrate; forming a gate trench in the main surface, the gate trench extending in a first direction parallel to the main surface; and for a gate electrode in the gate trench, ...
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Semiconductor Substrate Patent Applications
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Semiconductor device with thresholdmosfet for high voltage termination
Alpha And Omega Semiconductor Incorporated
August 17, 2017 - N°20170236895

This invention discloses a semiconductor power device disposed in a semiconductor substrate comprising a lightly doped layer formed on a heavily doped layer and having an active cell area and an edge termination area. The edge termination area comprises a plurality p-channel mosfets. By connecting the gate to the drain electrode, the p-channel mosfet transistors formed on the edge termination ...
Solid-state imaging device
Canon Kabushiki Kaisha
August 17, 2017 - N°20170236862

In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a ...
Backside illuminated (bsi) image sensor with a reflector
Taiwan Semiconductor Manufacturing Co., Ltd.
August 17, 2017 - N°20170236854

A backside illuminated (bsi) image sensor with a reflector is provided. A pixel sensor is arranged on a lower side of a semiconductor substrate, and comprises a photodetector arranged within the semiconductor substrate. An interconnect structure is arranged under the semiconductor substrate and the pixel sensor, and comprises an interconnect layer and a contact via extending from the interconnect layer ...
Integrated circuit devices and fabrication techniques
Stmicroelectronics, Inc.
August 17, 2017 - N°20170236826

Single gate and dual gate finfet devices suitable for use in an sram memory array have respective fins, source regions, and drain regions that are formed from portions of a single, contiguous layer on the semiconductor substrate, so that sti is unnecessary. Pairs of finfets can be configured as dependent-gate devices wherein adjacent channels are controlled by a common gate, ...
Semiconductor device
Renesas Electronics Corporation
August 17, 2017 - N°20170236818

A p-type well is formed in a semiconductor substrate, and an n+-type semiconductor region and a p+-type semiconductor region are formed in the p-type well to be spaced apart from each other. The n+-type semiconductor region is an emitter semiconductor region of a bipolar transistor, and the p-type well and the p+-type semiconductor region are base ...
Mosfet devices with asymmetric structural configurations introducing different electrical characteristics
Stmicroelectronics, Inc.
August 17, 2017 - N°20170236758

First and second transistors with different electrical characteristics are supported by a substrate having a first-type dopant. The first transistor includes a well region within the substrate having the first-type dopant, a first body region within the well region having a second-type dopant and a first source region within the first body region and laterally offset from the well region ...
Fin formation for semiconductor device
Samsung Electronics Co., Ltd.
August 17, 2017 - N°20170236722

A method of fabricating a semiconductor structure includes forming a plurality of semiconductor fins disposed on a semiconductor substrate, wherein at least one of the fins is an unwanted fin including a semiconductor material; providing a conformal protective layer over the plurality of semiconductor fins; forming a mask having an opening over the unwanted fin; removing a portion of the ...
Doped protection layer for contact formation
Taiwan Semiconductor Manufacturing Co., Ltd.
August 17, 2017 - N°20170236716

A semiconductor device is provided. The semiconductor device includes a semiconductor substrate including a first doped region and a second doped region and a gate stack on the semiconductor substrate. The semiconductor device also includes a main spacer layer on a sidewall of the gate stack and a protection layer between the main spacer layer and the semiconductor substrate. The ...
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