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Semiconductor Substrate

Semiconductor Substrate-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Acoustic sensor and capacitive transducer
Omron Corporation
June 14, 2018 - N°20180167740

An acoustic sensor has a semiconductor substrate having an opening, a back plate that is disposed facing the opening of the semiconductor substrate, that is configured to function as a fixed electrode, and that has sound holes that allow passage of air, a vibration electrode film disposed facing the back plate through a void, and a casing configured to house ...
Rectifier device
Infineon Technologies Ag
June 14, 2018 - N°20180166999

A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first mos transistor and a diode that is connected parallel to a load current path.
Rectifier device
Infineon Technologies Ag
June 14, 2018 - N°20180166971

A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first mos transistor and a diode that is connected parallel to a load current path.
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Structure and formation method of semiconductor device with bipolar junction transistor
Taiwan Semiconductor Manufacturing Co., Ltd.
June 14, 2018 - N°20180166564

A semiconductor device structure is provided. The semiconductor device structure includes a collector element formed in or over a semiconductor substrate.
Contact structure and extension formation for iii-v nfet
International Business Machines Corporation
June 14, 2018 - N°20180166561

Finfet devices including iii-v fin structures and silicon-based source/drain regions are formed on a semiconductor substrate. Silicon is diffused into the iii-v fin structures to form n-type junctions.
Semiconductor device and manufacturing method
Renesas Electronics Corporation
June 14, 2018 - N°20180166554

A semiconductor device includes: a first conductivity type semiconductor substrate made of silicon carbide; a second conductivity type body region in a device region of the semiconductor substrate; a first conductivity type source region formed in the body region; and a gate electrode formed on the body region through gate insulating films. The semiconductor device further includes, in a termination ...
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Semiconductor Substrate Patent Applications
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  • 2408+ full patent PDF documents of Semiconductor Substrate-related inventions.
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Semiconductor memory devices and methods of fabricating the same
Samsung Electronics Co., Ltd.
June 14, 2018 - N°20180166529

A semiconductor memory devices and methods of fabricating the same are disclosed. For example, the semiconductor memory device including a semiconductor substrate including a cell area and a peripheral area, a plurality of bottom electrodes on the semiconductor substrate at the cell area, a dielectric layer conformally covering top surfaces and sidewalls of the bottom electrodes, and an upper electrode ...
Semiconductor device including a line pattern having threshold switching devices
Samsung Electronics Co., Ltd.
June 14, 2018 - N°20180166502

Some example embodiments relate to a semiconductor device including a line pattern, the line pattern having threshold switching devices. The semiconductor device includes a line pattern disposed on a semiconductor substrate.
Imaging device, manufacturing method, and electronic device
Sony Corporation
June 14, 2018 - N°20180166490

There is provided an imaging device including: a first semiconductor substrate (21) having a first region (22, r11) that includes a photoelectric conversion section (67) and a via portion (51), a second region (r12) adjacent to the first region, a connection portion (53, 84, 85) disposed at the second region, and a second semiconductor substrate (81), wherein the connection portion electrically couples the first semiconductor substrate to the ...
Isolation structure for reducing crosstalk between pixels and fabrication method thereof
Taiwan Semiconductor Manufacturing Co., Ltd.
June 14, 2018 - N°20180166476

A semiconductor device and a method for fabricating the same are provided. In the method for fabricating the semiconductor device, at first, a semiconductor substrate is provided.
Semiconductor device
June 14, 2018 - N°20180166461

A semiconductor device includes a plurality of cell gate electrodes on a semiconductor substrate. End portions of the cell gate electrodes include stepped-pad regions that extend in a direction parallel to a surface of the semiconductor substrate.
Semiconductor device and method of manufacturing the same
Renesas Electronics Corporation
June 14, 2018 - N°20180166459

A method of manufacturing a semiconductor device, includes forming a fin structure on a main surface of semiconductor substrate, the fin structure including a silicon material; forming a first gate electrode over the fin structure via a first insulating film, and forming a second gate electrode over the fin structure via a second insulating film having a charge accumulating part, ...
Insulated gate semiconductor device
Fuji Electric Co., Ltd.
June 14, 2018 - N°20180166436

An insulated gate semiconductor device includes a main insulated gate transistor having a gate electrode controlling a main current, a current-detecting insulated gate transistor, which is disposed in parallel to a main insulated gate transistor, outputting a current on a proportional basis in size between the transistors to the main current flowing through the main insulated gate transistor, a temperature ...
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Semiconductor Substrate Patent Applications
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inventor
  • 2408+ full patent PDF documents of Semiconductor Substrate-related inventions.
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Package structure and method for forming the same
Taiwan Semiconductor Manufacturing Co., Ltd.
June 14, 2018 - N°20180166396

Package structures and methods for forming the same are provided. A fan-out package structure includes a semiconductor substrate.
Semiconductor device and method of manufacturing the same
Advanced Semiconductor Engineering, Inc.
June 14, 2018 - N°20180166370

A semiconductor substrate includes an interconnection structure and a dielectric layer. The dielectric layer surrounds the interconnection structure and defines a first cavity.
Method of forming conductive bumps for cooling device connection
Taiwan Semiconductor Manufacturing Company, Ltd.
June 14, 2018 - N°20180166361

A method of preparing a semiconductor substrate with metal bumps on both sides of the substrate includes depositing a first-side ubm layer on a first surface of the substrate, and forming a plurality of first-side metal bumps on the first surface of the substrate after the first-side ubm layer is deposited. The method includes forming a second-side ubm layer on ...
Semiconductor substrate, semiconductor device and method of forming the same
Nuvoton Technology Corporation
June 14, 2018 - N°20180166339

A semiconductor device, a semiconductor substrate and a method of forming the same are disclosed. The semiconductor substrate includes a first silicon-containing layer, a single crystalline iii-v compound semiconductor layer and an amorphous iii-v compound semiconductor layer.
Semiconductor with through-substrate interconnect
Micron Technology, Inc.
June 14, 2018 - N°20180166317

Semiconductor devices are described that have a metal interconnect extending vertically through a portion of the device to the back side of a semiconductor substrate. A top region of the metal interconnect is located vertically below a horizontal plane containing a metal routing layer.
Variable adjustment for precise matching of multiple chamber cavity housings
Asm Ip Holding B.v.
June 14, 2018 - N°20180166315

A vertical adjustment assembly is disclosed in order to provide for matching vertical positions of two substrates within separate chambers or cavities of a reaction system for processing of semiconductor substrates. The vertical adjustment assembly, in cooperation with a main lift driver, can provide for a more accurate positioning of the substrates to account for a tolerance stack-up error..
Ion injector and lens system for ion beam milling
Lam Research Corporation
June 14, 2018 - N°20180166304

The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner.
Method of forming a nitride semiconductor substrate
Samsung Electronics Co., Ltd.
June 14, 2018 - N°20180166302

In a method of forming a nitride semiconductor substrate, a nitride semiconductor substrate may be formed on a silicon substrate. A protection layer may be formed to cover a surface of the nitride semiconductor substrate.
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