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Semiconductor Substrate

Semiconductor Substrate-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Electronic device with substrate current management
Monolithic Power Systems, Inc.
October 12, 2017 - N°20170294902

An electronic device with substrate current management. The electronic device has a semiconductor substrate in which a schottky diode is formed. A parasitic pn diode is also formed in the semiconductor substrate, and coexisted with the schottky diode in parallel. The forward voltage of the schottky diode is limited to be larger than the forward conduction threshold voltage of the ...
Semiconductor device
Mitsubishi Electric Corporation
October 12, 2017 - N°20170294887

A semiconductor device includes: a semiconductor substrate whose contour is a pentagon; a front-stage amplifier formed relatively near a vertex of the pentagon of the semiconductor substrate; and a rear-stage amplifier formed relatively near a side opposed to the vertex of the semiconductor substrate and amplifying an output from the front-stage amplifier.
Laser device and methods for manufacturing the same
Electronics And Telecommunications Research Institute
October 12, 2017 - N°20170294762

Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the ...
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Semiconductor Substrate Patent Applications
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Bulk to silicon on insulator device
International Business Machines Corporation
October 12, 2017 - N°20170294534

A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of the bulk semiconductor substrate adjacent to the fin. The method further includes removing portions of the first insulator layer to reduce a thickness of the first insulator layer and expose a sidewall of the fin. ...
Bulk to silicon on insulator device
International Business Machines Corporation
October 12, 2017 - N°20170294533

A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of the bulk semiconductor substrate adjacent to the fin. The method further includes removing portions of the first insulator layer to reduce a thickness of the first insulator layer and expose a sidewall of the fin. ...
Semiconductor devices with integrated schotky diodes and methods of fabrication
Nxp Usa, Inc.
October 12, 2017 - N°20170294531

An embodiment of a semiconductor device includes a semiconductor substrate that includes an upper surface and a channel, a gate electrode disposed over the substrate electrically coupled to the channel, and a schottky metal layer disposed over the substrate adjacent the gate electrode. The schottky metal layer includes a schottky contact electrically coupled to the channel which provides a schottky ...
Semiconductor Substrate Patent Pack
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Semiconductor Substrate Patent Applications
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  • 2408+ full patent PDF documents of Semiconductor Substrate-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Semiconductor devices with enhanced deterministic doping and related methods
Atomera Incorporated
October 12, 2017 - N°20170294514

A method for making a semiconductor device may include forming a plurality of stacked groups of layers on a semiconductor substrate, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include ...
Semiconductor device and manufacturing method of the same
Atomera Incorporated
October 12, 2017 - N°20170294513

A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the soi substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of ...
Bulk to silicon on insulator device
International Business Machines Corporation
October 12, 2017 - N°20170294507

A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of the bulk semiconductor substrate adjacent to the fin. The method further includes removing portions of the first insulator layer to reduce a thickness of the first insulator layer and expose a sidewall of the fin. ...
Image sensor, method for manufacturing the same, and image processing device having the image sensor
Samsung Electronics Co., Ltd.
October 12, 2017 - N°20170294487

An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a ...
Photoelectric conversion device, manufacturing method of photoelectric conversion device, and imaging system
Canon Kabushiki Kaisha
October 12, 2017 - N°20170294472

Provided is a photoelectric conversion device including: a semiconductor substrate having a photoelectric conversion unit; a first conductive layer formed over the semiconductor substrate; a first diffusion prevention layer formed over the first conductive layer; and a light guide that guides an incident light into the photoelectric conversion unit, in which the first diffusion prevention layer contains hydrogen atoms and ...
Solid-state image pickup apparatus and method of manufacturing the same
Canon Kabushiki Kaisha
October 12, 2017 - N°20170294470

Provided are a solid-state image pickup apparatus which includes: a semiconductor substrate having a plurality of photoelectric converters; a first and a second insulating layers formed on the semiconductor substrate; an optical waveguide formed above each of the plurality of photoelectric converters and in an opening portion of the first and the second insulating layers, and has a refractive index ...
Solid-state imaging device
Olympus Corporation
October 12, 2017 - N°20170294467

A solid-state imaging device includes a first semiconductor substrate in which first photoelectric conversion layers photoelectrically converting incident light in a first wavelength band are formed, a second semiconductor substrate in which second photoelectric conversion layers photoelectrically converting incident light are formed, a conductive layer disposed between the first semiconductor substrate and the second semiconductor substrate and having conductivity, an ...
Semiconductor Substrate Patent Pack
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Semiconductor Substrate Patent Applications
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inventor
  • 2408+ full patent PDF documents of Semiconductor Substrate-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Semiconductor device and method for manufacturing the same
Rohm Co., Ltd.
October 12, 2017 - N°20170294400

A semiconductor device includes a semiconductor substrate with a wiring layer formed thereon, an insulating film formed on the semiconductor substrate so as to cover the wiring layer and having a pad opening exposing a portion of the wiring layer as a pad, a front surface protection film formed on the insulating film and being constituted of an insulating material ...
Semiconductor device
Sumitomo Electric Industries, Ltd.
October 12, 2017 - N°20170294365

A semiconductor device includes: a semiconductor element disposed on a semiconductor substrate; a first insulating film disposed on the semiconductor substrate, the first insulating film having an upper surface and an edge; a resin layer disposed on the semiconductor substrate, the resin layer covering the semiconductor element; and a second insulating film disposed on the semiconductor substrate, the second insulating ...
Semiconductor device and manufacturing method thereof
Renesas Electronics Corporation
October 12, 2017 - N°20170294352

A semiconductor device with a through via penetrating a semiconductor substrate, in which shorting between a wiring and a semiconductor element is prevented to improve the reliability of the semiconductor device. A liner insulating film as a low-k film, which has a function to insulate the semiconductor substrate and a through-silicon via from each other and is thick enough to ...
Electrical conductive vias in a semiconductor substrate and a corresponding manufacturing method
X-fab Semiconductor Foundries Ag
October 12, 2017 - N°20170294351

A method is provided for producing at least one electrical via in a substrate, the method comprising: producing a protective layer over a component structure which has been produced or is present on a front side of the substrate; forming at least one contact hole which extends from a surface of a backside of the substrate to a contact surface ...
Bulk to silicon on insulator device
International Business Machines Corporation
October 12, 2017 - N°20170294340

A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of the bulk semiconductor substrate adjacent to the fin. The method further includes removing portions of the first insulator layer to reduce a thickness of the first insulator layer and expose a sidewall of the fin. ...
Hkmg integration
Applied Materials, Inc.
October 12, 2017 - N°20170294320

A method for processing a semiconductor substrate is described herein. The method described herein includes generating fluorine radicals and ions, delivering the fluorine radicals through an ion blocker to a processing region, and removing one or more portions of a gate structure to expose one or more portions of a gate dielectric material disposed thereunder. The gate structure includes at ...
Fabrication of semiconductor structures
International Business Machines Corporation
October 12, 2017 - N°20170294307

The invention relates to a method for fabricating a semiconductor circuit comprising providing a semiconductor substrate; fabricating a first semiconductor device comprising a first semiconductor material on the substrate and forming an insulating layer comprising a cavity structure on the first semiconductor device. The cavity structure comprises at least one growth channel and the growth channel connects a crystalline seed ...
Formation of a layer on a semiconductor substrate
Aixtron Se
October 12, 2017 - N°20170294306

Described herein are techniques for forming an epitaxial iii-v layer on a substrate. In a pre-clean chamber, a native oxygen layer may be replaced with a passivation layer by treating the substrate with a hydrogen plasma (or products of a plasma decomposition). In a deposition chamber, the temperature of the substrate may be elevated to a temperature less than 700° ...
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