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Semiconductor Substrate

Semiconductor Substrate-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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NEW Doped substrate regions in mems microphones
Robert Bosch Gmbh
June 22, 2017 - N°20170180869

Systems and methods for preventing electrical leakage in a mems microphone. In one embodiment, the mems microphone includes a semiconductor substrate, an electrode, a first insulation layer, and a doped region. The first insulation layer is formed between the electrode and the semiconductor substrate. The doped region is implanted in at least a portion of the semiconductor substrate where the ...
NEW Image pickup device that is provided with peripheral circuits to prevent chip area from being ...
Canon Kabushiki Kaisha
June 22, 2017 - N°20170180664

An image pickup device which suppresses an increase in chip area of peripheral circuits without degrading the performance of a pixel section and makes it possible to prevent costs from being increased. The image pickup device includes a first semiconductor substrate and a second semiconductor substrate. A pixel section includes photo diodes each for generate electric charges by photoelectric conversion, ...
NEW Method of manufacturing solar cell
Lg Electronics Inc.
June 22, 2017 - N°20170179332

Disclosed herein are a solar cell and a method of manufacturing the same. The solar cell module includes a semiconductor substrate, a first passivation film located on a front surface of the semiconductor substrate, a second passivation film located on a rear surface of the semiconductor substrate, a front electric field region located on the first passivation film on the ...
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NEW Finfets with wrap-around silicide and method forming the same
Taiwan Semiconductor Manufacturing Company, Ltd.
June 22, 2017 - N°20170179301

A device includes isolation regions extending into a semiconductor substrate, with a substrate strip between opposite portions of the isolation regions having a first width. A source/drain region has a portion overlapping the substrate strip, wherein an upper portion of the source/drain region has a second width greater than the first width. The upper portion of the source/...
NEW One time programmable non-volatile memory device
Magnachip Semiconductor, Ltd.
June 22, 2017 - N°20170179297

A one-time programmable non-volatile memory device includes a first conductivity type well region located in a semiconductor substrate, a selection gate electrode and a floating gate electrode located on the substrate, a first doped region located between the selection gate electrode and the floating gate electrode, a second conductivity type source region located on one side of the selection gate ...
NEW Mos devices with non-uniform p-type impurity profile
Taiwan Semiconductor Manufacturing Company, Ltd.
June 22, 2017 - N°20170179287

An integrated circuit structure include a semiconductor substrate, a gate stack over the semiconductor substrate, and a recess extending into the semiconductor substrate, wherein the recess is adjacent to the gate stack. A silicon germanium region is disposed in the recess, wherein the silicon germanium region has a first p-type impurity concentration. A silicon cap substantially free from germanium is ...
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Semiconductor Substrate Patent Applications
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  • 2408+ full patent PDF documents of Semiconductor Substrate-related inventions.
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NEW Self-aligned nanostructures for semiconductor devices
Imec Vzw
June 22, 2017 - N°20170179281

A method for forming a semiconductor device is disclosed. The method includes providing a semiconductor substrate. The method also includes epitaxially growing on the semiconductor substrate a first part of a iii-v semiconductor nanostructure. The method further includes covering the first part of the iii-v semiconductor nanostructure with a layer of a first material. Additionally, the method includes removing a ...
NEW Partial, self-biased isolation in semiconductor devices
Freescale Semiconductor, Inc.
June 22, 2017 - N°20170179279

A device includes a semiconductor substrate, a buried doped isolation layer disposed in the semiconductor substrate to isolate the device, a drain region disposed in the semiconductor substrate and to which a voltage is applied during operation, and a depletion region disposed in the semiconductor substrate and having a conductivity type in common with the buried doped isolation barrier and ...
NEW Trench mosfet with depleted gate shield and method of manufacture
Great Wall Semiconductor Corporation
June 22, 2017 - N°20170179277

A semiconductor device, method of manufacture of a semiconductor device, and electronic system are disclosed. For example, the semiconductor device includes at least one trench disposed in a semiconductor substrate of the semiconductor device, wherein the semiconductor substrate has a first conductivity type. The semiconductor device further includes a polysilicon depleted gate shield disposed in the at least one trench, ...
NEW Semiconductor device and method for fabricating the same
Sk Hynix Inc.
June 22, 2017 - N°20170179253

A method for fabricating a semiconductor device may include: preparing a semiconductor substrate including a doping region; performing tilt implantation using a first additional dopant to form an amorphous region in the doping region; doping a second additional dopant in the amorphous region; forming a metal layer on the doped amorphous region; and reacting the doped amorphous region with the ...
NEW Semiconductor device and manufacturing method thereof
Seiko Epson Corporation
June 22, 2017 - N°20170179239

A semiconductor device includes a p-type semiconductor substrate, a plurality of n-type buried diffusion layers that are arranged in the semiconductor substrate, an n-type first semiconductor layer that is arranged in a first region on a first buried diffusion layer, an n-type second semiconductor layer that is arranged in a second region on a second buried diffusion layer, an n-type ...
NEW Dielectrically isolated semiconductor device and method for manufacturing the same
Hangzhou Silan Integrated Circuit Co., Ltd.
June 22, 2017 - N°20170179227

The present disclosure relates to a dielectrically isolated semiconductor device and a method for manufacturing the same. The dielectrically isolated semiconductor device includes a semiconductor substrate, a first semiconductor layer above the semiconductor substrate, a second semiconductor layer above the first semiconductor layer, a semiconductor island in the second semiconductor layer, and a first dielectric isolation layer surrounding a bottom ...
NEW Semiconductor device having a super junction structure and method of manufacturing the same
Semiconductor Components Industries, Llc
June 22, 2017 - N°20170179225

A semiconductor device having a super junction and a method of manufacturing the semiconductor device capable of obtaining a high breakdown voltage are provided, whereby charge balance of the super junction is further accurately controlled in the semiconductor device that is implemented by an n-type pillar and a p-type pillar. The semiconductor device includes a semiconductor substrate; and a blocking ...
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Semiconductor Substrate Patent Applications
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  • 2408+ full patent PDF documents of Semiconductor Substrate-related inventions.
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NEW Semiconductor device
Sharp Kabushiki Kaisha
June 22, 2017 - N°20170179222

A semiconductor device includes a wall-like first guard ring structure that is formed to surround a periphery of an element formation region on a semiconductor substrate and that extends in a thickness direction of the substrate through an insulating film; and a wall-like second guard ring structure that is formed to surround the periphery of the element formation region between ...
NEW Semiconductor device and method for producing the same
Renesas Electronics Corporation
June 22, 2017 - N°20170179221

A semiconductor device according to one embodiment of the present invention comprises: a semiconductor substrate having a main surface; a noise source element formed at the main surface of the semiconductor substrate; a protection target element formed at the main surface of the semiconductor substrate; an n type region disposed between the noise source element and the protection target element; ...
NEW Semiconductor device and method of manufacturing the same
Samsung Electronics Co., Ltd.
June 22, 2017 - N°20170179181

A semiconductor device includes a first semiconductor substrate having a first wiring layer which includes a first conductive pad, a second semiconductor substrate disposed on the first semiconductor substrate and including a second wiring layer which includes a second conductive pad, a first oxide layer disposed on the second semiconductor substrate and containing a second end of an intermediate connection ...
NEW Image sensor and electronic device including the same
Samsung Electronics Co., Ltd.
June 22, 2017 - N°20170179179

An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region, a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the ...
NEW Solid-state imaging device, production method of the same, and imaging apparatus
Sony Corporation
June 22, 2017 - N°20170179172

A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately ...
NEW Pixel for cmos image sensor and image sensor including the same
Samsung Electronics Co., Ltd.
June 22, 2017 - N°20170179170

A pixel of a complementary metal-oxide-semiconductor (cmos) image sensor includes a semiconductor substrate having a first surface and a third surface formed by removing part of the semiconductor substrate from a second surface, an active region which is formed between the first surface and the third surface and which contains a photoelectric conversion element generating charges in response to light ...
NEW Semiconductor device
Rohm Co., Ltd.
June 22, 2017 - N°20170179157

A semiconductor device includes a semiconductor substrate having an active layer in which an element region and a contact region are formed, a support substrate supporting the active layer, and a buried insulation layer interposed between the active layer and the support substrate. A transistor element is formed in the element region, the transistor element having a transistor buried impurity ...
NEW Structure and method for fully depleted silicon on insulator structure for threshold voltage modification
Globalfoundries Inc.
June 22, 2017 - N°20170179156

A method for fabricating a fully depleted silicon on insulator (fdsoi) device is described. A charge trapping layer in a buried oxide layer is provided on a semiconductor substrate. A backgate well in the semiconductor substrate is provided under the charge trapping layer. A device structure including a gate structure, source and drain regions is disposed over the buried oxide ...
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