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This page is updated frequently with new Semiconductor Material-related patent applications. Subscribe to the Semiconductor Material RSS feed to automatically get the update: related Semiconductor RSS feeds. RSS updates for this page: Semiconductor Material RSS RSS


Acenaphthylene imide-derived semiconductors

University Of Washington Through Its Center For Commercialization

Acenaphthylene imide-derived semiconductors

Tunable heterojunction for multifunctional electronics and photovoltaics

Northeastern University

Tunable heterojunction for multifunctional electronics and photovoltaics

Tunable heterojunction for multifunctional electronics and photovoltaics

Solar cell having an emitter region with wide bandgap semiconductor material


Date/App# patent app List of recent Semiconductor Material-related patents
08/27/15
20150244149 
 Tunable semiconductor device and  making tunable semiconductor device patent thumbnailTunable semiconductor device and making tunable semiconductor device
Method and apparatus for a tunable laser device. In one aspect, a tunable laser device comprises a first doped cladding layer on a semiconductor substrate, a first waveguide layer of essentially undoped piezoelectric material on a top surface of the first doped cladding layer, an active layer on the top surface of the first waveguide layer, a second waveguide layer of essentially undoped piezoelectric material on the top surface of the active layer, a longitudinal structure parallel to a longitudinal axis of the semiconductor device on a top surface of the second waveguide layer comprising a doped semiconductor material, and a longitudinal interdigitated transducer (idt) formed on the top surface of the second waveguide layer or on the bottom surface of the first waveguide layer, the idt extending longitudinally in a direction parallel to the longitudinal axis and being arranged to, in response to a signal from a signal generator, generate a surface acoustic wave (saw) in a direction parallel to the longitudinal axis..
Euphoenix B.v.


08/27/15
20150243906 
 Acenaphthylene imide-derived semiconductors patent thumbnailAcenaphthylene imide-derived semiconductors
Novel acenaphthylene imide-derived semiconductor materials, including small molecule compounds, polymers and oligomers. Also provided are methods for making the novel semiconductor materials and the use of the novel semiconducting materials in electronic or optoelectronic device.
University Of Washington Through Its Center For Commercialization


08/27/15
20150243826 
 Tunable heterojunction for multifunctional electronics and photovoltaics patent thumbnailTunable heterojunction for multifunctional electronics and photovoltaics
Provided in one embodiment is a method for operating a photodiode device, which device comprises: at least one layer of an n-doped semiconductor material; two portions of a dielectric material separately disposed over separate regions of the at least one layer of the n-doped semiconductor material; at least one monolayer of a carbon-based material disposed between the two portions of dielectric material and over the at least one layer of the n-doped semiconductor material; two terminal electrodes, each electrode disposed in electrical communication with a respective one of the portions of dielectric material; and a gate electrode in electrical communication with the at least one layer of the n-doped semiconductor material. The method comprises: applying a voltage across the gate electrode and one of the two terminal electrodes; and exposing the photodiode device to electromagnetic radiation..
Northeastern University


08/27/15
20150243803 
 Solar cell having an emitter region with wide bandgap semiconductor material patent thumbnailSolar cell having an emitter region with wide bandgap semiconductor material
Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell.

08/27/15
20150243796 
 Back gate single-crystal flexible thin film transistor and  making patent thumbnailBack gate single-crystal flexible thin film transistor and making
A gate dielectric material and a gate conductor portion are formed on a single-crystal semiconductor material of a substrate. A dielectric structure is then formed surrounding the gate conductor portion and thereafter a stressor layer is formed on the dielectric structure.
International Business Machines Corporation


08/27/15
20150243782 
 Transistor-containing constructions and memory arrays patent thumbnailTransistor-containing constructions and memory arrays
Some embodiments include transistor-containing constructions having gate material within an opening in a semiconductor material and spaced from the semiconductor material by gate dielectric material. The opening has a wide lower region beneath a narrow upper region.
Micron Technology, Inc.


08/27/15
20150243745 
 Finfet device with epitaxial structure patent thumbnailFinfet device with epitaxial structure
A finfet device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin structure.
Taiwan Semiconductor Manufacturing Company Ltd.


08/27/15
20150243734 
 Methods of forming transistors patent thumbnailMethods of forming transistors
Some embodiments include methods of forming transistors. Recesses are formed to extend into semiconductor material.
Micron Technology, Inc.


08/27/15
20150243707 
 Tunneling transistor having a vertical channel, variable resistive memory device including the same, and  manufacturing the same patent thumbnailTunneling transistor having a vertical channel, variable resistive memory device including the same, and manufacturing the same
A tunneling transistor including a semiconductor substrate on which a source is formed in an upper region and having a first semiconductor material layer, a pillar formed on the semiconductor substrate and having a structure in which a channel layer and a drain are sequentially stacked, a gate formed to surround a circumference of the pillar, and a second semiconductor material layer constituting a portion of the source, formed between the source and the channel layer, having the same conductivity type as the source, and having a band gap smaller than the first semiconductor material layer. Wherein, the source and the drain have opposite conductivity types..
Sk Hynix Inc.


08/27/15
20150241506 
 Method and system for junction depth identification for ultra shallow junctions patent thumbnailMethod and system for junction depth identification for ultra shallow junctions
Provided is a method for identifying material junctions and doping characteristics in semiconductor and other materials by illuminating the material and measuring voltage. A correlation between penetration depth of light and wavelength of light is established for a material.
Tsmc Solar Ltd.


08/27/15
20150241291 

Pressure sensor made from nanogauges coupled to a resonator


A pressure sensor made of semiconductor material, the sensor comprising a box defining a housing under a secondary vacuum, at least one resonator received in the housing and suspended by flexible beams from at least one elastically deformable diaphragm closing the housing that also contains means for exciting the resonator in order to set the resonator into vibration and detector means for detecting a vibration frequency of the resonator. The detector means comprise at least a first suspended piezoresistive strain gauge having one end secured to one of the beams and one end secured to the diaphragm.
Sagem Defense Securite


08/27/15
20150240153 

Nano-crystalline core and nano-crystalline shell pairing having group i-iii-vi material nano-crystalline core


Nano-crystalline core and nano-crystalline shell pairings having group i-iii-vi material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group i-iii-vi material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group i-iii-vi semiconductor material.

08/20/15
20150236287 

Excitonic energy transfer to increase inorganic solar cell efficiency


The present disclosure relates to a photosensitive optoelectronic device comprising two electrodes, an inorganic subcell positioned between the two electrodes, wherein the inorganic subcell comprises at least one inorganic semiconductor material having a band gap energy (eg), and an organic sensitizing window layer disposed on the inorganic subcell. In one aspect, the organic sensitizing window layer comprises a singlet fission material.
University Of Southern California


08/20/15
20150236270 

Organic semiconductor material


Compounds useful as organic semiconductor materials, and semiconductor devices containing such organic semiconductor materials are described.. .
E.t.c. S.r.l.


08/20/15
20150236222 

Semiconductor structure having nanocrystalline core and nanocrystalline shell with insulator coating


Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0.

08/20/15
20150236204 

Light-emitting device


A light-emitting device comprises: a light-emitting semiconductor stack; and an electrode on the light-emitting semiconductor stack comprising a base material and a contact material different from the base material and capable of forming an ohmic contact with semiconductor material; wherein the contact material is distributed over a part of the light-emitting device and has a largest concentration in the electrode.. .
Epistar Corporation


08/20/15
20150236201 

Optical device


An optical device and method for fabricating an optical device. The optical device comprising: a semiconductor material comprising an active layer configured to emit light when an electrical current is applied to the device and/or to generate an electrical current when light is incident on the active layer, wherein the semiconductor material comprises a first surface and an opposed second surface, from which light is emitted from and/or received by the device, and wherein the first surface defines a first structure comprising the active layer and configured to reflect light emitted from the active layer toward the second surface and/or to reflect light received by the device toward the active layer, and the second surface defines a second structure configured to permit light incident on the second surface at an angle outside a critical angle range to the planar normal to pass therethrough..
Infiniled Limited


08/20/15
20150236186 

Nano avalanche photodiode architecture for photon detection


An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material.
Northrop Grumman Systems Corporation


08/20/15
20150236172 

Schottky device and manufacture


A schottky device includes a barrier height adjustment layer in a portion of a semiconductor material. In accordance with an embodiment, the schottky device is formed from a semiconductor material of a first conductivity type which has a barrier height adjustment layer of a second conductivity type that extends from a first major surface of the semiconductor material into the semiconductor material a distance that is less than a zero bias depletion boundary.
Semiconductor Components Industries, Llc


08/20/15
20150236140 

Current switching transistor


An electronic device and a method of fabricating an electronic device are disclosed. The device includes a body of semiconductor material, and a conductive material defining at least three conducting contacts to form respective terminals.
Pst Sensors (proprietary) Limited


08/20/15
20150236138 

Semiconductor device and manufacturing the same


A variation in electrical characteristics, such as a negative shift of the threshold voltage or an increase in s value, of a fin-type transistor including an oxide semiconductor material is prevented. An oxide semiconductor film is sandwiched between a plurality of gate electrodes with an insulating film provided between the oxide semiconductor film and each of the gate electrodes.
Semiconductor Energy Laboratory Co., Ltd.


08/20/15
20150236058 

Image sensor pixel cell with switched deep trench isolation structure


A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region.
Omnivision Technologies, Inc.


08/20/15
20150236051 

Semiconductor device including groups of stacked nanowires and related methods


A method for making a semiconductor device may include forming, above a substrate, a stack of alternating layers of first and second semiconductor materials. The second semiconductor material may be different than the first semiconductor material.
Stmicroelectronics, Inc.


08/20/15
20150236050 

Semiconductor device including groups of nanowires of different semiconductor materials and related methods


A method for making a semiconductor device may include forming, above a substrate, a plurality of fins, forming a first semiconductor material on sides of a first group of the fins, and forming a second semiconductor material on sides of a second group of the fins. The method may further include forming a dielectric layer overlying the plurality of fins to define first and second groups of nanowires within the dielectric layer, with the first group of nanowires including the first semiconductor material and the second group of nanowires including the second semiconductor material..
Stmicroelectronics, Inc.


08/20/15
20150236020 

Cmos transistors including gate spacers of the same thickness


A dielectric material layer is deposited on gate structures of first and second semiconductor material portions. The dielectric material layer is anisotropically etched to form a first gate spacer on a first semiconductor material portion, while being protected above the second semiconductor material portion.
International Business Machines Corporation


08/20/15
20150236019 

Cmos transistors including gate spacers of the same thickness


A dielectric material layer is deposited on gate structures of first and second semiconductor material portions. The dielectric material layer is anisotropically etched to form a first gate spacer on a first semiconductor material portion, while being protected above the second semiconductor material portion.
International Business Machines Corporation


08/20/15
20150235908 

On-chip diode with fully depleted semicondutor devices


An electrical device including a first conductivity semiconductor device present in a first semiconductor device region of an soi substrate, and a second conductivity semiconductor device present in a second semiconductor device region of the soi substrate. The electrical device also includes a diode present within a diode region of the soi substrate that includes a first doped layer of a first conductivity semiconductor material that is present on an soi layer of the soi substrate.
International Business Machines Corporation


08/20/15
20150235905 

Structure and finfet device


A method of forming a fin field effect transistor (finfet) structure including forming a plurality of shallow trench isolation (sti) features in a semiconductor substrate, thereby defining a plurality of bulk-semiconductor areas separated from each other by the sti features. The method then forms a first hard mask layer on the semiconductor substrate, the first hard mask layer being patterned to have a plurality of openings over one of the bulk-semiconductor areas.
Taiwan Semiconductor Manufacturing Company, Ltd.


08/20/15
20150235903 

Self-aligned iii-v mosfet fabrication with in-situ iii-v epitaxy and in-situ metal epitaxy and contact formation


A method for forming a transistor includes providing a patterned gate stack disposed on a iii-v substrate and having sidewall spacers formed on sides of the patterned gate stack, the iii-v substrate including source/drain regions adjacent to the sidewall spacers and field oxide regions formed adjacent to the source/drain regions. The method includes growing raised source/drain regions on the source/drain regions, the grown raised source/drain regions including iii-v semiconductor material, and growing metal contacts on the grown raised source/drain regions.
International Business Machines Corporation


08/20/15
20150235838 

Heterogeneous integration of group iii nitride on silicon for advanced integrated circuits


Various methods to integrate a group iii nitride material on a silicon material are provided. In one embodiment, the method includes providing a structure including a (100) silicon layer, a (111) silicon layer located on an uppermost surface of the (100) silicon layer, a group iii nitride material layer located on an uppermost surface of the (111) silicon layer, and a blanket layer of dielectric material located on an uppermost surface of the group iii nitride material layer.
International Business Machines Corporation


08/13/15
20150228913 

Benzothienobenzothiophene derivative, organic semiconductor material, and organic transistor


The present invention, the present invention relates to an organic semiconductor material having a benzothienobenzothiophene skeleton, an organic semiconductor ink containing the organic semiconductor material, and an organic transistor using the organic semiconductor material. An object of the present invention is to provide an organic semiconductor material that easily provides a film having a high carrier mobility without the need for a complicated process.
Tokyo Institute Of Technology


08/13/15
20150228898 

6,12-dioxaanthanthrene derivative, organic semiconductor element, and manufacturing organic semiconductor element


There are provided a 6,12-dioxaanthanthrene derivative which is an organic semiconductor material capable of improving resistance to mechanical deformation, an organic semiconductor element, and a method for manufacturing the organic semiconductor element. The 6,12-dioxaanthanthrene derivative is represented by structural formula (1).
Sony Corporation


08/13/15
20150228890 

Resistive memory device


A resistive memory device includes: a resistive layer which includes a first magnetic layer, a second magnetic layer, and a tunnel insulating layer interposed between the first magnetic layer and the second magnetic layer, and is switched between different resistance states; and a strained film formed over a sidewall of the resistive layer and applying a strain to the resistive layer, wherein the strained film includes a semiconductor material containing ions implanted therein. .
Sk Hynix Inc.


08/13/15
20150228826 

Semiconductor gamma ray detector element configuration of axially series multi-chamber structure for improving detector depletion plan


A high purity germanium (hpge) radiation detector has been specially machined to be this invented series multi-chamber coaxial configuration. So extra-large volume hpge detectors can be easily produced with current available hpge crystal, and the entire detector body structure can be uniquely optimized in accordance with the exact semiconductor crystal ingot situation so the overall detector can be easier depleted and the photo-induced carriers can be better collected as the signal output.

08/13/15
20150228823 

Apparatus and methods of mixing and depositing thin film photovoltaic compositions


Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web.
Hanergy Hi-tech Power (hk) Limited


08/13/15
20150228792 

Methods of forming a non-planar ultra-thin body semiconductor device and the resulting devices


One device disclosed includes a gate structure positioned around a perimeter surface of the fin, a layer of channel semiconductor material having an axial length in the channel length direction of the device that corresponds approximately to the overall width of the gate structure being positioned between the gate structure and around the outer perimeter surface of the fin, wherein an inner surface of the layer of channel semiconductor material is spaced apart from and does not contact the outer perimeter surface of the fin. One method disclosed involves, among other things, forming first and second layers of semiconductor material around the fin, forming a gate structure around the second semiconductor material, removing the portions of the first and second layers of semiconductor material positioned laterally outside of sidewall spacers and removing the first layer of semiconductor material positioned below the second layer of semiconductor material..
Globalfoundries Inc.


08/13/15
20150228790 

Method of fabricating spacers in a strained semiconductor device


The present disclosure provides a method for fabricating a semiconductor device that includes forming a gate stack over a silicon substrate, forming dummy spacers on sidewalls of the gate stack, isotropically etching the silicon substrate to form recess regions on either side of the gate stack, forming a semiconductor material in the recess regions, the semiconductor material being different from the silicon substrate, removing the dummy spacers, forming spacer layers having an oxide-nitride-oxide configuration over the gate stack and the semiconductor material, and etching the spacer layers to form gate spacers on the sidewalls of the gate stack.. .
Taiwan Semiconductor Manufacturing Company, Ltd.


08/13/15
20150228783 

Field effect transistors employing a thin channel region on a crystalline insulator structure


A single crystalline dielectric layer is provided on an insulator layer including an amorphous dielectric material. The single crystalline dielectric layer can be patterned into various crystalline dielectric portions including dielectric fins, dielectric nanowires, and a dielectric fin-plate assembly.
International Business Machines Corporation


08/13/15
20150228781 

Method for making semiconductor device with stressed semiconductor and related devices


A method is for making a semiconductor device. The method may include forming fins above a substrate, each fin having an upper fin portion including a first semiconductor material and a lower fin portion including a dielectric material.
Stmicroelectronics, Inc.


08/13/15
20150228780 

Finfet device with abrupt junctions


A plurality of semiconductor fins is formed on a surface of an insulator layer. Gate structures are then formed that are orientated perpendicular and straddle each semiconductor fin.
International Business Machines Corporation


08/13/15
20150228766 

Formation of high quality fin in 3d structure by way of two-step implantation


The present disclosure discloses a method of fabricating a semiconductor device. A fin structure is formed over a substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.


08/13/15
20150228748 

Multi-composition gate dielectric field effect transistors


A first gate structure and a second gate structure are formed over a semiconductor material layer. The first gate structure includes a planar silicon-based gate dielectric, a planar high-k gate dielectric, a metallic nitride portion, and a first semiconductor material portion, and the second gate structure includes a silicon-based dielectric material portion and a second semiconductor material portion.
International Business Machines Corporation


08/13/15
20150228731 

Modified channel position to suppress hot carrier injection in finfets


Some embodiments relate to an integrated circuit (ic) including one or more finfet devices. A finfet includes a fin of semiconductor material extending upwards from a semiconductor substrate.
Taiwan Semiconductor Manufacturing Co., Ltd.


08/13/15
20150228670 

Method to form dual channel group iii-v and si/ge finfet cmos


A method includes providing a structure having a substrate, a first insulating layer on the substrate, a first semiconductor material layer on the first insulating layer, a second insulating layer on the first semiconductor layer in a first portion of the structure and a second semiconductor layer of a second, different semiconductor material on the second insulating layer in the first portion. The method further includes growing additional first semiconductor material on the first semiconductor layer in a second portion of the structure forming a regrown semiconductor layer; forming first fins in the regrown semiconductor layer and second fins in the second semiconductor layer; and forming gate structures upon the first and second fins.
Lnternational Business Machines Corporation


08/13/15
20150228669 

Method to form group iii-v and si/ge finfet on insulator


A method includes providing a structure having a substrate, a first electrically insulating layer overlying the substrate, a first semiconductor layer comprised of a first semiconductor material overlying the first electrically insulating layer, a second electrically insulating layer overlying the first semiconductor layer in a first portion of the structure and a second semiconductor layer comprised of a second, different semiconductor material overlying the second electrically insulating layer in the first portion. The method further includes growing additional first semiconductor material on the first semiconductor layer in a second portion of the structure to form a regrown semiconductor layer; forming fins; forming gate structures orthogonal to the fins and removing at least a portion of the first semiconductor layer in the first portion of the structure to form a void and filling the void with insulating material.
International Business Machines Corporation


08/13/15
20150228588 

Semiconductor wafers including indications of crystal orientation and methods of forming the same


A wafer can be provided to include a single crystalline semiconductor material with a predetermined crystal orientation. The wafer can include a laser mark at a determined position on a front surface or on a back surface of the wafer, where the determined position is configured to indicate the predetermined crystal orientation of the single crystalline semiconductor material..

08/13/15
20150228490 

Reduced threshold voltage-width dependency in transistors comprising high-k metal gate electrode structures


Performance and/or uniformity of sophisticated transistors may be enhanced by incorporating a carbon species in the active regions of the transistors prior to forming complex high-k metal gate electrode structures. For example, a carbon species may be incorporated by ion implantation into the active region of a p-channel transistor and an n-channel transistor after selectively forming a threshold adjusted semiconductor material for the p-channel transistor, while the active region of the n-channel transistor is still masked..
Globalfoundries Inc.


08/13/15
20150228485 

Methods and systems for dopant activation using microwave radiation


A semiconductor structure includes a substrate and a source/drain (s/d) junction. The s/d junction is associated with the substrate and includes a semiconductor material.
Taiwan Semiconductor Manufacturing Company Limited


08/06/15
20150223322 

Packaged semiconductor device having a shielding against electromagnetic interference and manufacturing process thereof


A packaged device has a die of semiconductor material bonded to a support. An electromagnetic shielding structure surrounds the die and is formed by a grid structure of conductive material extending into the support and an electromagnetic shield, coupled together.
Stmicroelectronics S.r.l.


08/06/15
20150221885 

Photoelectric conversion device and fabrication method therefor


A photoelectric conversion device includes a positive electrode, a negative electrode, and a photoelectric conversion layer including a p-type organic semiconductor material and an n-type organic semiconductor material that configure a bulk heterojunction. The photoelectric conversion layer includes an amorphous polymer compound including a carbazole ring, a fluorene ring or a cyclopentadithiopene ring in a main chain as the p-type organic semiconductor material, and includes an amorphous fullerene derivative as the n-type organic semiconductor material.
Fujitsu Limited


08/06/15
20150221876 

Organic thin film transistor, organic semiconductor thin film, and organic semiconductor material


An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility and a small fluctuation of the threshold voltage after repeated driving. R1 to r10 represent a hydrogen atom or a substituent, provided that at least one of r1 to r10 represents a substituent represented by the formula (w), or the aromatic hydrocarbon ring formed with any adjacent two of r1 to r10 has a substituent represented by the formula (w).
Fujifilm Corporation


08/06/15
20150221838 

Composite having semiconductor structures embedded in a matrix


Composites having semiconductor structures embedded in a matrix are described. In an example, a composite includes a matrix material.

08/06/15
20150221810 

Controlling the stoichiometry and doping of semiconductor materials


Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element.
Alliance For Sustainable Energy, Llc


08/06/15
20150221735 

Method of forming a trench using epitaxial lateral overgrowth and deep vertical trench structure


In one aspect, a method of forming a trench in a semiconductor material includes forming a first dielectric layer on a semiconductor substrate. The first dielectric layer includes first openings.
Infineon Technologies Austria Ag


08/06/15
20150221724 

Source and drain doping profile control employing carbon-doped semiconductor material


Carbon-doped semiconductor material portions are formed on a subset of surfaces of underlying semiconductor surfaces contiguously connected to a channel of a field effect transistor. Carbon-doped semiconductor material portions can be formed by selective epitaxy of a carbon-containing semiconductor material layer or by shallow implantation of carbon atoms into surface portions of the underlying semiconductor surfaces.
International Business Machines Corporation


08/06/15
20150221719 

Semiconductor body with strained monocrystalline region


A semiconductor body comprised of a semiconductor material includes a first monocrystalline region of the semiconductor material having a first lattice constant along a reference direction, a second monocrystalline region of the semiconductor material having a second lattice constant, which is different than the first, along the reference direction, and a third, strained monocrystalline region between the first region and the second region.. .
Lnfineon Technologies Austria Ag


08/06/15
20150221667 

Semiconductor memory device and manufacturing the same


A semiconductor memory device according to one embodiment includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked.
Kabushiki Kaisha Toshiba


08/06/15
20150221627 

Multi-layer devices utilizing layer transfer


An apparatus is disclosed that includes a first plurality of devices made of a group iii-v semiconductor material and a second plurality of devices made of a semiconductor material different than the material of the first plurality of devices that are bonded to the first plurality of devices. The apparatus also includes a dielectric layer surrounding the first plurality of devices and the second plurality of devices to mechanically bond the first plurality of devices to the second plurality of devices..
Sandia Corporation


08/06/15
20150221577 

Package assembly having a semiconductor substrate


Embodiments of the present disclosure provide a method that includes providing a semiconductor substrate comprising a semiconductor material, forming a dielectric layer on the semiconductor substrate, forming an interconnect layer on the dielectric layer, attaching a semiconductor die to the semiconductor substrate, and electrically coupling an active side of the semiconductor die to the interconnect layer, the interconnect layer to route electrical signals of the semiconductor die. Other embodiments may be described and/or claimed..
Marvell World Trade Ltd.


08/06/15
20150221556 

Method to form trench structure for replacement channel growth


Embodiments may include a method of semiconductor patterning including forming a first trench bordered by a first spacer material. The method may involve forming a second trench bordered by a second spacer material formed conformally around the first spacer material.
Applied Materials, Inc.


08/06/15
20150221546 

Semiconductor diodes fabricated by aspect ratio trapping with coalesced films


A method of forming a photonic device that comprises a substrate and a dielectric material including two or more openings that expose a portion of the substrate, the two or more openings each having an aspect ratio of at least 1. A bottom diode material comprising a compound semiconductor material that is lattice mismatched to the substrate occupies the two or more openings and is coalesced above the two or more openings to form the bottom diode region.
Taiwan Semiconductor Manufacturing Company, Ltd.


08/06/15
20150221545 

Method for reducing surface roughness while producing a high quality useful layer


A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein and to define a useful layer.
Soitec


08/06/15
20150221406 

X-ray radiation detector, ct system and related method


A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, in particular for use in a ct system. In an embodiment, the detector includes a semiconductor material used for detecting the x-ray radiation; at least one collimator; and at least one radiation source, to irradiate the semiconductor material with additional radiation.
Siemens Aktiengesellschaft


08/06/15
20150219693 

Integrated semiconductor device comprising a hall effect current sensor


The semiconductor integrated device has a conductive region, for example, an external contact pad, configured to be traversed by a current to be measured. A concentrator of magnetic material partially surrounds the conductive region and has an annular shape open at a point defining an air gap area where a sensitive region is arranged, which is electrically conductive and is typically of doped semiconductor material, such as polycrystalline silicon.
Stmicroelectronics S.r.i.


08/06/15
20150218442 

Semiconductor nanocrystals and processes for synthesizing the same


A nanocrystal particle including: a semiconductor material; boron and optionally fluorine, wherein the particle has an organic ligand bound to a surface thereof, the boron is present as being doped in the particle or as a metal boride and the fluorine is present as being doped in the particle or as a metal fluoride.. .
Samsung Electronics Co., Ltd.


08/06/15
20150218184 

Organic thin film transistor, organic semiconductor thin film, and organic semiconductor material


An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility and a small fluctuation of the threshold voltage after repeated driving. R1 to r12 represent a hydrogen atom or a substituent, provided that at least one of r1 to r12 represents a substituent represented by the formula (w), or all of r1 to r12 represent a hydrogen atom.
Fujifilm Corporation


07/30/15
20150214488 

Organic semiconductor material


A novel compound useful as organic semiconductor material, and semiconductor devices containing such organic semiconductor material are described.. .
E.t. C. S.r.l.


07/30/15
20150214433 

Method for producing core/shell nanoparticles and core/shell nanoparticles


The invention also relates to core-shell nanoparticles comprising a core of a core material, preferably of a first semiconductor material, and an outer shell of a shell material, characterized in that, between core and shell, there is only a layer of a transition zone, in which the proportion of the core material gradually decreases toward the shell, while the proportion of the shell material gradually increases.. .

07/30/15
20150214369 

Methods of forming epitaxial semiconductor material on source/drain regions of a finfet semiconductor device and the resulting devices


One illustrative device disclosed herein includes a fin defined in a semiconductor substrate having a crystalline structure, wherein at least a sidewall of the fin is positioned substantially in a <100> crystallographic direction of the substrate, a gate structure positioned around the fin, an outermost sidewall spacer positioned adjacent opposite sides of the gate structure, and an epi semiconductor material formed around portions of the fin positioned laterally outside of the outermost sidewall spacers in the source/drain regions of the device, wherein the epi semiconductor material has a substantially uniform thickness along the sidewalls of the fin.. .
Globalfoundries Inc.


07/30/15
20150214364 

Fin field effect transistor including a strained epitaxial semiconductor shell


A semiconductor fin including a single crystalline semiconductor material is formed on a dielectric layer. A semiconductor shell including an epitaxial semiconductor material is formed on all physically exposed surfaces of the semiconductor fin by selective epitaxy, which deposits the semiconductor material only on semiconductor surfaces and not on dielectric surfaces.
International Business Machines Corporation


07/30/15
20150214363 

N-type field effect transistors, arrays comprising n-type vertically-oriented transistors, methods of forming an n-type field effect transistor, and methods of forming an array comprising vertically-oriented n-type transistors


An n-type field effect transistor includes silicon-comprising semiconductor material comprising a pair of source/drain regions having a channel region there-between. At least one of the source/drain regions is conductively doped n-type with at least one of as and p.
Micron Technology, Inc.


07/30/15
20150214344 

Bipolar junction transistors with self-aligned terminals


Device structures, design structures, and fabrication methods for a bipolar junction transistor. A first layer comprised of a first semiconductor material and a second layer comprised of a second semiconductor material are disposed on a substrate containing a first terminal of the bipolar junction transistor.
International Business Machines Corporation


07/30/15
20150214340 

Methods of forming semiconductor devices, including forming a semiconductor material on a fin, and related semiconductor devices


Methods of forming a semiconductor device are provided. A method of forming a semiconductor device includes forming a semiconductor layer on a fin, where the fin and the semiconductor layer include first and second semiconductor materials, respectively.

07/30/15
20150214331 

Replacement metal gate including dielectric gate material


A method of fabricating a semiconductor device includes forming at least one semiconductor fin on a semiconductor substrate. A plurality of gate formation layers is formed on an etch stop layer disposed on the fin.
International Business Machines Corporation


07/30/15
20150214311 

Method of manufacturing a semiconductor device having a buried field plate


A method of manufacturing a semiconductor device includes forming a first compound semiconductor material on a semiconductor substrate and forming a second compound semiconductor material on the first compound semiconductor material. The second compound semiconductor material includes a different material than the first compound semiconductor material such that the first compound semiconductor material has a two-dimensional electron gas (2deg).
Infineon Technologies Austria Ag


07/30/15
20150214300 

Electronic device of vertical mos type with termination trenches having variable depth


An electronic device is integrated on a chip of semiconductor material having a main surface and a substrate region with a first type of conductivity. The electronic device has a vertical mos transistor, formed in an active area having a body region with a second conductivity type.
Stmicroelectronics S.r.l.


07/30/15
20150214299 

Structures and methods with reduced sensitivity to surface charge


The present application provides (in addition to more broadly applicable inventions) improvements which are particularly applicable to two-sided power semiconductor devices which use bipolar conduction. In this class of devices, the inventor has realized that two or three of the four (or more) semiconductor doping components which form the carrier-emission structures and control structures in the active device (array) portion of a two-sided power device can also be used, with surprising advantages, to form field-limiting rings around the active arrays on both surfaces.
Ideal Power Inc.


07/30/15
20150214219 

Gate structure cut after formation of epitaxial active regions


A gate structure straddling a plurality of semiconductor material portions is formed. Source regions and drain regions are formed in the plurality of semiconductor material portions, and a gate spacer laterally surrounding the gate structure is formed.
International Business Machines Corporation


07/30/15
20150214132 

Low-profile heat sink with fine-structure patterned fins for increased heat transfer


In one embodiment, a device for transferring heat comprises a base member and a first array of pin fins supported by the base member, the pin fins having an aspect ratio of not less than about 10, and the pin fins being not more than about 0.3 mm in equivalent diameter and not more than about 3 mm in length, either one or both of the base member and pin fins comprising a metallic or semiconductor material. To form this device, a substrate is provided.
Dicon Fiberoptics, Inc.


07/30/15
20150214099 

Method of etching a crystalline semiconductor material by ion implantation and then chemical etching based on hydrogen chloride


The invention provides a method of etching a crystalline semiconductor material (114), the method being characterized in that it comprises: at least one ion implantation performed by implanting a plurality of ions (121) in at least one volume (113) of the semiconductor material (114) in such a manner as to make the semiconductor material amorphous in the at least one implanted volume (113), and as to keep the semiconductor material (114) in a crystalline state outside (112) the at least one implanted volume (113); and at least one chemical etching for selectively etching the amorphous semiconductor material relative to the crystalline semiconductor material, so as to remove the semiconductor material in the at least one volume (113) and so as to keep the semiconductor material outside (112) the at least one volume (113).. .
Commissariat A L'energie Atomique Et Aux Ene Alt


07/30/15
20150214096 

Sinker with a reduced width


The width of a heavily-doped sinker is substantially reduced by forming the heavily-doped sinker to lie in between a number of closely-spaced trench isolation structures, which have been formed in a semiconductor material. During drive-in, the closely-spaced trench isolation structures significantly limit the lateral diffusion..
Texas Instruments Incorporated


07/30/15
20150214059 

Integrated circuits with metal-insulator-semiconductor (mis) contact structures and methods for fabricating same


Integrated circuits having metal-insulator-semiconductor (mis) contact structures and methods for fabricating integrated circuits having metal-insulator-semiconductor (mis) contact structures are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a fin structure formed from semiconductor material overlying a semiconductor substrate.
Globalfoundries, Inc.


07/30/15
20150212385 

Semiconductor interferometric device


The present invention describes a semiconductor interferometric reflecting device capable of modulating the reflected light by modulating the carrier concentration inside a semiconductor device. The variation of the carrier concentration within the device causes the variation of the physical optical properties inside the semiconductor material leading to a shift of the reflected and absorbed light spectrums.

07/30/15
20150212011 

Method for analysing the crystal structure of a polycrystalline semiconductor


A method for analysing the crystal structure of a polycrystalline semiconductor material is described. According to one embodiment, the method includes exciting the material to make the material emit a luminescent signal, detecting, at each point of a mesh in a preset spatial region of the material, the luminescent signal at a variable polarization angle, in a frequency band of width greater than or equal to the width of the bandgap of the material, estimating, at each point of the mesh in the preset spatial region of the material, from the signal detected for said point of the mesh, a data characteristic of the modulation of the luminescent signal, modelled by a sum of sine waves, as a function of the polarization angle, and representing the characteristic data over all of the points of the mesh in the preset spatial region..
ElectricitÉ De France - Edf




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Semiconductor Material topics: Semiconductor, Semiconductor Material, Semiconductor Device, Transistors, Surfactant, Electric Conversion, Transparent Conductive Oxide, Semiconductor Substrate, Heating Devices, Semiconductor Devices, Organic Electroluminescence, Buffer Layer, Integrated Circuit, Crystallin, Electronic Device

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