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Semiconductor Material

Semiconductor Material-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Semiconductor material doping
Sensor Electronic Technology, Inc.
April 19, 2018 - N°20180108805

A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such ...
Method for manufacturing a hemt transistor and hemt transistor with improved electron mobility
Stmicroelectronics S.r.l.
April 19, 2018 - N°20180108767

A method for manufacturing a hemt transistor comprising the steps of: providing a wafer comprising a semiconductor body including a heterojunction structure formed by semiconductor materials that include elements of groups iii-v of the periodic table, and a dielectric layer on the semiconductor body; etching selective portions of the wafer, thus exposing a portion of the heterojunction structure; forming an ...
Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base
International Business Machines Corporation
April 19, 2018 - N°20180108763

After forming a trench extending through an insulator layer and an underlying top semiconductor portion that is comprised of a first semiconductor material and a dopant of a first conductivity type to define an emitter and a collector on opposite sides of the trench in the top semiconductor portion, an intrinsic base comprising a second semiconductor material having a bandgap ...
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Semiconductor Material Patent Applications
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Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
Taiwan Semiconductor Manufacturing Company, Ltd.
April 19, 2018 - N°20180108741

A method of forming a semiconductor structure includes forming an opening in a dielectric layer, forming a recess in an exposed part of a substrate, and forming a lattice-mismatched crystalline semiconductor material in the recess and opening.
Semiconductors with increased carrier concentration
Katholieke Universiteit Leuven, Ku Leuven R&d
April 19, 2018 - N°20180108734

Within examples, a semiconductor device includes a first structure that includes a first doped semiconductor material of a first doping type. The semiconductor device further includes a metal in contact with the first structure, and a second structure that includes a second doped semiconductor material of the first doping type in contact with the first structure. A band off-set for ...
Method of fabricating semiconductor devices
Samsung Electronics Co., Ltd.
April 19, 2018 - N°20180108728

Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on ...
Semiconductor Material Patent Pack
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Semiconductor Material Patent Applications
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For professional research & prior art discovery
inventor
  • 693+ full patent PDF documents of Semiconductor Material-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Method of forming nanowires
Imec Vzw
April 19, 2018 - N°20180108526

The disclosed technology generally relates semiconductor devices and more particularly to semiconductor devices comprising nanowires. In one aspect, a method of fabricating a semiconductor device includes providing a semiconductor substrate having one or more elongated structures thereon and forming a strained layer of semiconductor material on at least one surface of the elongated structures, and annealing the strained layer to ...
Semiconductor device for directly converting radioisotope emissions into electrical power
City Labs, Inc.
April 19, 2018 - N°20180108446

A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped gaas substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture the beta particles and generate electrical current, may include, in various embodiments, gaas, inalp, ingap, inalgap, algaas, and other semiconductor ...
Core-shell nanoplatelets film and display device using the same
Nexdot
April 19, 2018 - N°20180107065

Disclosed is a population of semiconductor nanoplatelets, each member of the population including a nanoplatelet core including a first semiconductor material and a shell including a second semiconductor material on the surface of the nanoplatelet core, wherein the population exhibits fluorescence quantum efficiency at 100° c. Or above that is at least 80% of the fluorescence quantum efficiency of the population ...
System and method for electrical testing of through silicon vias (tsvs)
Stmicroelectronics S.r.l.
April 19, 2018 - N°20180106854

A testing system for carrying out electrical testing of at least one first through via forms an insulated via structure extending only part way through a substrate of a first body of semiconductor material. The testing system has a first electrical test circuit integrated in the first body and electrically coupled to the insulated via structure. The first electrical test ...
Light emitting diode and fabrication method thereof
Xiamen Sanan Optoelectronics Technology Co., Ltd.
April 12, 2018 - N°20180102461

A light-emitting diode includes from bottom to up: a substrate; a light-emitting epitaxial layer laminated by semiconductor material layers over the substrate; a current spreading layer doped with conductive metal nanomaterial groups over the light-emitting epitaxial layer; and metal nanomaterial groups with high visible light transmittance over the current spreading layer. The conductive metal nanomaterial groups dispersed inside the ito ...
Structure and method for finfet device with buried sige oxide
Taiwan Semiconductor Manufacturing Company, Ltd.
April 12, 2018 - N°20180102419

A semiconductor device includes a substrate and a fin feature over the substrate. The fin feature includes a first portion having a first semiconductor material and a second portion having a second semiconductor material over the first portion. The second semiconductor material is different from the first semiconductor material. The semiconductor device further includes an isolation feature over the substrate ...
Electromagnetic shield for testing integrated circuits
Stmicroelectronics S.r.l.
April 12, 2018 - N°20180100876

A probe card includes a number probes. Each probe is adapted to contact a corresponding terminal of a circuit integrated in at least one die of a semiconductor material wafer during a test phase of the wafer. The probes include at least one probe adapted to provide and/or receive a radio frequency test signal to/from the corresponding terminal ...
Semiconductor Material Patent Pack
Download 693+ patent application PDFs
Semiconductor Material Patent Applications
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For professional research & prior art discovery
inventor
  • 693+ full patent PDF documents of Semiconductor Material-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
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Doped gate dielectric materials
Hrl Laboratories, Llc
April 05, 2018 - N°20180097081

A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with ...
Semiconductor device, method of manufacturing the same and electronic device including the device
Institute Of Microelectronics, Chinese Academy Of Sciences
April 05, 2018 - N°20180097065

There are provided a semiconductor device, a method of manufacturing the same, and an electronic device including the device. According to an embodiment, the semiconductor device may include a substrate; a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence, wherein the second source/drain layer comprises a first semiconductor ...
Array substrate for thin-film transistor and display device of the same
Lg Display Co., Ltd.
April 05, 2018 - N°20180097062

A carbon allotrope and a display device including the same are disclosed. The thin-film transistor array substrate, comprising a substrate, a gate electrode on the substrate, an active layer comprising a first active layer, which opposes the gate electrode and is adjacent to the gate electrode thereby comprising a semiconductor material and a plurality of carbon allotropes, and a second ...
Complementary thin film transistor and manufacturing method thereof
Shenzhen China Star Optoelectronics Technology Co., Ltd.
April 05, 2018 - N°20180097035

A complementary thin film transistor and manufacturing method thereof are provided. The complementary thin film transistor has a substrate, an n-type semiconductor layer, a p-type semiconductor layer, a first passivation layer, a first electrode metal layer, and a second electrode metal layer. The n-type semiconductor layer is disposed above the substrate, and comprises a metal oxide material. The p-type semiconductor ...
Finfet device with abrupt junctions
International Business Machines Corporation
April 05, 2018 - N°20180097017

A plurality of semiconductor fins is formed on a surface of an insulator layer. Gate structures are then formed that are orientated perpendicular and straddle each semiconductor fin. A dielectric spacer is then formed on vertical sidewalls of each gate structure. Next, an etch is performed that removes exposed portions of each semiconductor fin and a portion of the insulator ...
Epitaxial oxide fin segments to prevent strained semiconductor fin end relaxation
International Business Machines Corporation
April 05, 2018 - N°20180096997

A method of forming a semiconductor device that includes providing regions of epitaxial oxide material on a substrate of a first lattice dimension, wherein regions of the epitaxial oxide material separate regions of epitaxial semiconductor material having a second lattice dimension are different than the first lattice dimension to provide regions of strained semiconductor. The regions of the strained semiconductor ...
Semiconductor arrangement, method of manufacturing the same electronic device including the same
Institute Of Microelectronics, Chinese Academy Of Sciences
April 05, 2018 - N°20180096896

There are provided a semiconductor arrangement, a method of manufacturing the same, and an electronic device including the semiconductor arrangement. According to an embodiment, the semiconductor arrangement may include a first semiconductor device and a second semiconductor device stacked in sequence on a substrate. Each of the first semiconductor device and the second semiconductor device may include a first source/...
Self-aligned trench metal-alloying for iii-v nfets
International Business Machines Corporation
April 05, 2018 - N°20180096885

After forming source/drain contact openings to expose portions of source/drain regions composed of an n-doped iii-v compound semiconductor material, surfaces of the exposed portions of the source/drain regions are cleaned to remove native oxides and doped with plasma-generated n-type dopant radicals. Semiconductor caps are formed in-situ on the cleaned surfaces of the source/drain regions, and subsequently ...
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