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Semiconductor Material

Semiconductor Material-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Microscale three-dimensional electric devices and methods of making the same
Regents Of The University Of Minnesota
October 12, 2017 - N°20170294698

Functionalized microscale 3d devices and methods of making the same. The 3d microdevice can be realized with the combination of top-down (lithographic) and bottom-up (origami-inspired self-assembly) processes. The origami-inspired self-assembly approach combined with a top-down process can realize 3d microscale polyhedral structures with metal/semiconductor materials patterned on dielectric materials. In some embodiments, the functionalized 3d microdevices include resonator-based passive ...
Light-emitting diode chips with enhanced brightness
Xiamen Changelight Co., Ltd.
October 12, 2017 - N°20170294557

According to at least some embodiments of the present disclosure, a light-emitting diode (led) chip includes a semiconductor material portion, a transparent conductive layer disposed above the semiconductor material portion, a current blocking layer disposed above the transparent conductive layer, one or more electrodes disposed above the current blocking layer, and a plurality of electron outflow channels that electrically interconnect ...
Protective insulator for hfet devices
Power Integrations, Inc.
October 12, 2017 - N°20170294532

A high-voltage field effect transistor a heterojunction is disposed between the first and second semiconductor material. A first composite passivation layer includes a first insulation layer and a first passivation layer, and a second composite passivation layer includes a second insulation layer and a second passivation layer. The first insulation layer is disposed between the first passivation layer and the ...
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Methods of forming source/drain regions on finfet devices
Globalfoundries Inc.
October 12, 2017 - N°20170294522

One illustrative method disclosed herein includes, among other things, forming a fin in a semiconductor substrate, forming a gate structure around the fin and, after forming the gate structure, forming a final source/drain cavity in the fin, wherein the source/drain cavity comprises an upper innermost edge and a lower innermost edge, both of which extend laterally under at ...
Semiconductor devices and methods of fabricating the same
Samsung Electronics Co., Ltd.
October 12, 2017 - N°20170294437

A semiconductor device includes a substrate with an nmosfet region and a pmosfet region, a first active pattern on the nmosfet region, a second active pattern on the pmosfet region, a dummy pattern between the nmosfet and pmosfet regions, and device isolation patterns on the substrate that fill trenches between the first active pattern, the second active pattern, and the ...
Semiconductor device and method of using a standardized carrier to form embedded wafer level chip ...
Stats Chippac Pte. Ltd.
October 12, 2017 - N°20170294406

A semiconductor device includes a standardized carrier. A semiconductor wafer includes a plurality of semiconductor die and a base semiconductor material. The semiconductor wafer is singulated through a first portion of the base semiconductor material to separate the semiconductor die. The semiconductor die are disposed over the standardized carrier. A size of the standardized carrier is independent from a size ...
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Stacked nanowire devices
International Business Machines Corporation
October 12, 2017 - N°20170294358

A semiconductor device comprises first stack of nanowires arranged on a substrate comprises a first nanowire and a second nanowire, the second nanowire is arranged substantially co-planar in a first plane with the first nanowire the first nanowire and the second nanowire arranged substantially parallel with the substrate, a second stack of nanowires comprises a third nanowire and a fourth ...
Fabrication of semiconductor structures
International Business Machines Corporation
October 12, 2017 - N°20170294307

The invention relates to a method for fabricating a semiconductor circuit comprising providing a semiconductor substrate; fabricating a first semiconductor device comprising a first semiconductor material on the substrate and forming an insulating layer comprising a cavity structure on the first semiconductor device. The cavity structure comprises at least one growth channel and the growth channel connects a crystalline seed ...
Photonic radiator for radiating light wave to free space
Korea Advanced Institute Of Science And Technology
October 12, 2017 - N°20170293074

A photonic radiator used for a photonic phased array antenna includes a waveguide including a waveguide clad and a waveguide core that uses semiconductor materials, and a grating that radiates an output light wave to a space by using scattering of an input light wave incident in a direction of the waveguide.
Systems for tunable nanocube plasmonic resonators and methods for forming
Elwha Llc
October 12, 2017 - N°20170293053

The present disclosure is directed to systems for tuning nanocube plasmonic resonators and methods for forming tunable plasmonic resonators. A tunable plasmonic resonator system can include a substrate and a nanostructure positioned on a surface of the substrate. The substrate can include a semiconductor material having a carrier density distribution. A junction can be formed between the nanostructure and the ...
Organic solar cell and method for fabricating the same
Korea Institute Of Science And Technology
October 05, 2017 - N°20170288156

An organic solar cell is provided. The organic solar cell includes a photoactive layer in which a low molecular weight conjugated compound as a first organic semiconductor material is mixed with an appropriate amount of a second organic semiconductor material. The first organic semiconductor material includes both electron donors and electron acceptors. The presence of the electron donors and the ...
Two-stage light concentrator
X Development Llc
October 05, 2017 - N°20170288079

A light concentrator includes a luminescent concentrator and a gain medium. The luminescent concentrator includes a semiconductor material and the semiconductor material absorbs first photons. The first photons have energy greater than or equal to a threshold energy, and the semiconductor material emits second photons through a spontaneous emission process where the second photons have less energy than the first ...
Semiconductor device and method of producing semiconductor device
Sharp Kabushiki Kaisha
October 05, 2017 - N°20170288062

A semiconductor device includes an oxide semiconductor film, a first insulating film, and a second insulating film. The oxide semiconductor film is made of oxide semiconductor material. The oxide semiconductor film includes a low resistance portion having an electrical resistance lower than another portion. The low resistance portion is separated from the other portion. The first insulating film is formed ...
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Power harvesting for integrated circuits
Synopsys, Inc.
October 05, 2017 - N°20170287977

Integrated circuit devices which include a thermoelectric generator which recycles heat generated by operation of an integrated circuit, into electrical energy that is then used to help support the power requirements of that integrated circuit. Roughly described, the device includes an integrated circuit die having an integrated circuit thereon, the integrated circuit having power supply terminals for connection to a ...
Image sensor contact enhancement
Omnivision Technologies, Inc.
October 05, 2017 - N°20170287966

A method of image sensor fabrication includes providing a plurality of photodiodes disposed in a semiconductor material and a floating diffusion disposed in the semiconductor material. The method also includes providing peripheral circuitry disposed in the semiconductor material, including a first electrical contact to the semiconductor material, and forming a transfer gate disposed to transfer image charge from the photodiode ...
Multilevel memory stack structure employing stacks of a support pedestal structure and a support pillar ...
Sandisk Technologies Llc
October 05, 2017 - N°20170287926

Memory-opening semiconductor material portions and support opening fill structures can be simultaneously formed through a first alternating stack of first insulating layers and first sacrificial material layers. Dopant species that retard or prevent etching of the material of the support opening fill structures can be implanted into an upper portion of each support opening fill structure, while memory-opening semiconductor material ...
Semiconductor structure including a transistor including a gate electrode region provided in a substrate and ...
Globalfoundries Inc.
October 05, 2017 - N°20170287901

A semiconductor structure includes a bulk semiconductor substrate, an electrically insulating layer over the substrate, an active layer of semiconductor material over the electrically insulating layer and a transistor. The transistor includes an active region, a gate electrode region and an isolation junction region. The active region is provided in the active layer of semiconductor material and includes a source ...
Semiconductor substrate with stress relief regions
Infineon Technologies Austria Ag
October 05, 2017 - N°20170287709

A crystalline base substrate including a first semiconductor material and having a main surface is provided. The base substrate is processed so as to damage a lattice structure of the base substrate in a first region that extends to the main surface without damaging a lattice structure of the base substrate in second regions that are adjacent to the first ...
Ray detector
Boe Technlogy Group Co., Ltd.
October 05, 2017 - N°20170285185

Embodiments of the disclosure provide a ray detector, which comprises a ray conversion layer for converting a ray incident on the ray detector into visible light, a photoelectric conversion layer for receiving the visible light and converting it into a charge signal, a pixel array having a plurality of pixels for detecting the charge signal, and a substrate below the ...
Mems accelerometric sensor having high accuracy and low sensitivity to temperature and aging
Stmicroelectronics S.r.l.
October 05, 2017 - N°20170285064

A mems accelerometric sensor includes a bearing structure and a suspended region that is made of semiconductor material, mobile with respect to the bearing structure. At least one modulation electrode is fixed to the bearing structure and is biased with an electrical modulation signal including at least one periodic component having a first frequency. At least one variable capacitor is ...
Process for manufacturing a mems pressure sensor, and corresponding mems pressure sensor
Stmicroelectronics S.r.l.
October 05, 2017 - N°20170284882

A process for manufacturing a mems pressure sensor having a micromechanical structure envisages: providing a wafer having a substrate of semiconductor material and a top surface; forming a buried cavity entirely contained within the substrate and separated from the top surface by a membrane suspended above the buried cavity; forming a fluidic-communication access for fluidic communication of the membrane with ...
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