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Semiconductor Material

Semiconductor Material-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Light-emitting semiconductor device, light-emitting semiconductor component and method for producing a light-emitting semiconductor device
Osram Opto Semiconductors Gmbh
June 14, 2018 - N°20180166854

The invention relates to, inter alia, a light-emitting semiconductor component comprising the following: —a first mirror (102, 202, 302, 402, 502), —a first conductive layer (103, 203, 303, 403, 503), —a light-emitting layer sequence (104, 204, 304, 404, 504) on a first conductive layer face facing away from the first mirror, and —a second conductive layer (105, 205, 305, 405, 505) on a light-emitting layer sequence face facing away from the first conductive layer, wherein —...
Methods and apparatus for three-dimensional nonvolatile memory
Sandisk Technologies Llc
June 14, 2018 - N°20180166559

A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, the word line including a first portion including a first conductive material and a second portion including a second conductive material, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the ...
Process to etch semiconductor materials
Taiwan Semiconductor Manufacturing Co., Ltd.
June 14, 2018 - N°20180166533

The present disclosure describes a method which can selectively etch silicon from silicon/silicon-germanium stacks or silicon-germanium from silicon-germanium/germanium stacks to form germanium-rich channel nanowires. For example, a method can include a multilayer stack formed with alternating layers of a silicon-rich material and a germanium-rich material.
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Organic light-emitting diode, display panel and display device
Shanghai Tianma Am-oled Co., Ltd.
June 14, 2018 - N°20180166509

The application discloses an organic light-emitting diode for a display panel. The organic light-emitting diode includes an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between every two adjacent emitting layers, wherein the charge generation layer includes a first layer unit and a second layer unit which ...
Complementary thin film transistor and manufacturing method thereof
Shenzhen China Star Optoelectronics Technology Co., Ltd.
June 14, 2018 - N°20180166503

A complementary thin film transistor and manufacturing method thereof are provided. The complementary thin film transistor has a substrate, an n-type semiconductor layer, a p-type semiconductor layer, and an etched barrier layer.
Semiconductor templates and fabrication methods
Seren Photonics Limited
June 14, 2018 - N°20180166275

A method of making a semi-polar semiconductor template comprises providing a semi-polar semiconductor wafer; etching the semiconductor wafer to form a regular semiconductor structure comprising a plurality of semiconductor regions (260) with a plurality of gaps between the regions, each of the regions (260) having a sidewall facing a respective one of the gaps, and growing semiconductor material over the semiconductor structure. ...
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Semiconductor Material Patent Applications
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inventor
  • 693+ full patent PDF documents of Semiconductor Material-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Organic light-emitting diode, display panel and display device
Shanghai Tianma Am-oled Co., Ltd.
June 07, 2018 - N°20180159084

The disclosure discloses an organic light-emitting diode, a display panel and a display device. The organic light-emitting diode includes an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between every two adjacent emitting layers, where the charge generation layer includes a first doping layer, an intermediate layer ...
Infrared photodetector
Isorg
June 07, 2018 - N°20180159058

An infrared photodetector including a stack of layers on a substrate having an active area made of organic semiconductor materials capable of converting an infrared radiation into an electric signal and including, in said stack and/or on the substrate, a single layer at least partially filtering visible light.. .
Logic circuit based on thin film transistor
Hon Hai Precision Industry Co., Ltd.
June 07, 2018 - N°20180159057

The disclosure relates to a logic circuit. The logic circuit includes a n-type thin film transistor and a p-type thin film transistor.
Logic circuit based on thin film transistor
Hon Hai Precision Industry Co., Ltd.
June 07, 2018 - N°20180159056

The disclosure relates to a logic circuit. The logic circuit includes two ambipolar thin film transistors.
Low power barrier modulated cell for storage class memory
Sandisk Technologies Llc
June 07, 2018 - N°20180159033

Systems and methods for providing a barrier modulated cell (bmc) structure that may comprise a reversible resistance-switching memory element within a memory array are described. The bmc structure may include a barrier layer comprising a layer of amorphous germanium or amorphous silicon germanium paired with a conductive metal oxide, such as titanium dioxide (tio2), strontium titanate (srtio3), or a binary ...
Method for producing at least one optoelectronic semiconductor component and optoelectronic semiconductor component
Osram Opto Semiconductors Gmbh
June 07, 2018 - N°20180158993

A method for producing at least one optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence comprising a first semiconductor material configured to emit a first radiation and applying a conversion element at least partially on the semiconductor layer sequence via a cold method, wherein the conversion element ...
Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material ...
Infineon Technologies Austria Ag
June 07, 2018 - N°20180158964

An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises sic and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer.
Semiconductor Material Patent Pack
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Semiconductor Material Patent Applications
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inventor
  • 693+ full patent PDF documents of Semiconductor Material-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Method and structure for incorporating strain in nanosheet devices
International Business Machines Corporation
June 07, 2018 - N°20180158952

A semiconductor structure includes a plurality of stacked and suspended semiconductor nanosheets located above a semiconductor substrate. Each semiconductor nanosheet has a pair of end sidewalls that have a v-shaped undercut surface.
Offstate parasitic leakage reduction for tunneling field effect transistors
Intel Corporation
June 07, 2018 - N°20180158933

A method including forming a non-planar conducting channel of a device between junction regions on a substrate, the substrate including a blocking material beneath the channel, the blocking material including a property to inhibit carrier leakage; and forming a gate stack on the channel, the gate stack including a dielectric material and a gate electrode. A method including forming a ...
Thin film transistor and method for making the same
Hon Hai Precision Industry Co., Ltd.
June 07, 2018 - N°20180158921

The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a semiconductor layer on the substrate, wherein the semiconductor layer includes nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are on the substrate, spaced apart from each other, and electrically connected to ...
Semiconductor device with diode region and trench gate structure
Infineon Technologies Ag
June 07, 2018 - N°20180158920

A semiconductor device includes a semiconductor body formed from a semiconductor material with a band-gap of at least 2.0 ev, the semiconductor body having a diode region and a source region. The semiconductor device further includes a trench gate structure having a first sidewall and a second sidewall opposite the first sidewall, the first sidewall and the second sidewall extending along ...
Thin film transistor and method for making the same
Hon Hai Precision Industry Co., Ltd.
June 07, 2018 - N°20180158905

The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a semiconductor layer on the substrate, wherein the semiconductor layer includes nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are on the substrate, spaced apart from each other, and electrically connected to ...
Thin film transistor and method for making the same
Hon Hai Precision Industry Co., Ltd.
June 07, 2018 - N°20180158904

The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a gate located on the substrate; a dielectric layer located on the gate; a semiconductor layer located on the dielectric layer and including nano-scaled semiconductor materials; and a drain and a source spaced apart from each other and ...
Electro-optical element integrating an organic electroluminescent diode and an organic transistor for modulating said diode
June 07, 2018 - N°20180158892

In this element, one of the current flow electrodes of the transistor and the lower electrode of the diode form a common layer. According to the invention, the transistor includes what is called a “contact” zone made of semiconductor material which is placed between at least one of its current flow electrodes and its active zone ...
Stacked image sensor with interconnects made of doped semiconductor material
Stmicroelectronics (crolles 2) Sas
June 07, 2018 - N°20180158860

An image sensor includes a first semiconductor substrate supporting a photodiode and a source region of a transfer transistor. A first interconnect level on the first semiconductor substrate includes an interconnection dielectric layer on the first semiconductor substrate and interconnect line layers over the interconnection dielectric layer.
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