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This page is updated frequently with new Semiconductor Material-related patent applications. Subscribe to the Semiconductor Material RSS feed to automatically get the update: related Semiconductor RSS feeds. RSS updates for this page: Semiconductor Material RSS RSS


Stringer-free gate electrode for a suspended semiconductor fin

Stringer-free gate electrode for a suspended semiconductor fin

Stringer-free gate electrode for a suspended semiconductor fin

Stringer-free gate electrode for a suspended semiconductor fin

Stringer-free gate electrode for a suspended semiconductor fin

Stress release structures for metal electrodes of semiconductor devices

Date/App# patent app List of recent Semiconductor Material-related patents
11/13/14
20140332903
 Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same patent thumbnailIntegrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same
A structure has at least one field effect transistor having a gate stack disposed between raised source drain structures that are adjacent to the gate stack. The gate stack and raised source drain structures are disposed on a surface of a semiconductor material.
11/13/14
20140332892
 Stringer-free gate electrode for a suspended semiconductor fin patent thumbnailStringer-free gate electrode for a suspended semiconductor fin
At least one semiconductor fin is formed over an insulator layer. Portions of the insulator layer are etched from underneath the at least one semiconductor fin.
11/13/14
20140332890
 Stringer-free gate electrode for a suspended semiconductor fin patent thumbnailStringer-free gate electrode for a suspended semiconductor fin
At least one semiconductor fin is formed over an insulator layer. Portions of the insulator layer are etched from underneath the at least one semiconductor fin.
11/13/14
20140332854
 Stress release structures for metal electrodes of semiconductor devices patent thumbnailStress release structures for metal electrodes of semiconductor devices
This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation.
11/13/14
20140332838
 Light emitting devices having light coupling layers with recessed electrodes patent thumbnailLight emitting devices having light coupling layers with recessed electrodes
A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling structure is disposed adjacent to one of the first layer and the second layer.
11/13/14
20140332809
 Semiconductor device patent thumbnailSemiconductor device
With a combination of a transistor including an oxide semiconductor material and a transistor including a semiconductor material other than an oxide semiconductor, a semiconductor device with a novel structure in which data can be retained for a long time and does not have a limitation on the number of writing can be obtained. When a connection electrode for connecting the transistor including a semiconductor material other than an oxide semiconductor to the transistor including an oxide semiconductor material is smaller than an electrode of the transistor including a semiconductor material other than an oxide semiconductor that is connected to the connection electrode, the semiconductor device with a novel structure can be highly integrated and the storage capacity per unit area can be increased..
11/13/14
20140332806
 Semiconductor device patent thumbnailSemiconductor device
One object is to provide a new semiconductor device whose standby power is sufficiently reduced. The semiconductor device includes a first power supply terminal, a second power supply terminal, a switching transistor using an oxide semiconductor material and an integrated circuit.
11/13/14
20140332805
 Semiconductor device patent thumbnailSemiconductor device
A semiconductor device having a novel structure is provided. The semiconductor device includes a first p-type transistor, a second n-type transistor, a third transistor, and a fourth transistor.
11/13/14
20140332802
 Semiconductor device patent thumbnailSemiconductor device
In a semiconductor device which conducts multilevel writing operation and a driving method thereof, a signal line for controlling on/off of a writing transistor for conducting a writing operation on a memory cell using a transistor including an oxide semiconductor layer is disposed along a bit line, and a multilevel writing operation is conducted with use of, also in a writing operation, a voltage which is applied to a capacitor at a reading operation. Because an oxide semiconductor material that is a wide gap semiconductor capable of sufficiently reducing off-state current of a transistor is used, data can be held for a long period..
11/13/14
20140332756
 Nitride semiconductor light-emitting device and method of manufacturing the same patent thumbnailNitride semiconductor light-emitting device and method of manufacturing the same
A nitride semiconductor light-emitting device is formed of an n-type nitride semiconductor layer, a trigger layer, a v-pit expanding layer, a light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The light-emitting layer has a v-pit formed therein.
11/06/14
20140329380
Formation of semiconductor structures with variable gate lengths
A plurality of doped sacrificial semiconductor material portions of a first width and a plurality of doped sacrificial semiconductor material portions of a second width, which is different from the first width, are provided on a sacrificial gate dielectric material. Exposed portions of the sacrificial dielectric material are removed.
11/06/14
20140329370
Layer transfer of silicon onto iii-nitride material for heterogenous integration
An integrated silicon and iii-n semiconductor device may be formed by growing iii-n semiconductor material on a first silicon substrate having a first orientation. A second silicon substrate with a second, different, orientation has a release layer between a silicon device film and a carrier wafer.
11/06/14
20140328106
Semiconductor memory device
The memory capacity of a dram is enhanced. A semiconductor memory device includes a driver circuit including part of a single crystal semiconductor substrate, a multilayer wiring layer provided over the driver circuit, and a memory cell array layer provided over the multilayer wiring layer.
11/06/14
20140327361
High colour quality luminaire
A colour tunable lighting module is described which includes at least three solid state lighting emitters (such as light emitting diodes) and at least two wavelength converting elements (such as phosphors). The three solid state lighting emitters are formed of the same semiconductor material system and the light generated by them has dominant wavelengths in the blue-green-orange range of the optical spectrum.
11/06/14
20140327106
Bipolar junction transistors with self-aligned terminals
Device structures, fabrication methods, and design structures for a bipolar junction transistor. A semiconductor material layer is formed on a substrate and a mask layer is formed on the semiconductor material layer.
11/06/14
20140327043
High electron mobility transistor and method of manufacturing the same
Provided are a high electron mobility transistor (hemt) and a method of manufacturing the hemt. The hemt includes: a channel layer comprising a first semiconductor material; a channel supply layer comprising a second semiconductor material and generating two-dimensional electron gas (2deg) in the channel layer; a source electrode and a drain electrode separated from each other in the channel supply layer; at least one depletion forming unit that is formed on the channel supply layer and forms a depletion region in the 2deg; at least one gate electrode that is formed on the at least one depletion forming unit; at least one bridge that connects the at least one depletion forming unit and the source electrode; and a contact portion that extends from the at least one bridge under the source electrode..
11/06/14
20140327012
Hemt transistors consisting of (iii-b)-n wide bandgap semiconductors comprising boron
An electronic hemt transistor structure comprises a heterojunction formed from a first layer, called a buffer layer, of a first wide bandgap semiconductor material, and a second layer of a second wide bandgap semiconductor material, with a bandgap width eg2 larger than that eg1 of the first material, and a two-dimensional electron gas flowing in a channel confined in the first layer under the interface of the heterojunction. The first layer furthermore comprises a layer of a bgan material under the channel, with an average boron concentration of at least 0.1%, improving the electrical performance of the transistor.
11/06/14
20140326999
Semiconductor device
An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode.
11/06/14
20140326943
Semiconductor device for electron emission in a vacuum
A semiconductor device for electron emission in a vacuum comprises a stack of two or more semi-conductor layers of n and p type according to sequence n/(p)/n forming a juxtaposition of two head-to-tail np junctions, in materials belonging to the iii-n family, two adjacent layers forming an interface. The semiconductor materials of the layers of the stack close to the vacuum, where the electrons reach a high energy, have a band gap eg>c/2, where c is the electron affinity of the semiconductor material, the p-type semiconductor layer being obtained partially or completely, by doping impurities of acceptor type or by piezoelectric effect to exhibit a negative fixed charge in any interface between the layers, a positive bias potential applied to the stack supplying, to a fraction of electrons circulating in the stack, the energy needed for emission in the vacuum by an emissive zone of an output layer..
11/06/14
20140326752
Dispensing vessel having a self-supporting secondary container for use in a printing apparatus for depositing a liquid composition on a backplane
A dispensing vessel for holding a supply of a liquid includes an outer can and corresponding lid conjoinable to the outer can in an air-tight manner is improved by the provision of a separate self-supporting secondary inner container removably receivable within the outer can. The container is fabricated of a material that is non-reactive with a liquid composition containing an organic semiconductor material, such as a polytetrafluoroethylene material or stainless steel..
11/06/14
20140326333
Liquid replenishment system for a printing apparatus for depositing a liquid composition on a backplane including a dispensing vessel having a self-supporting secondary container
A liquid replenishment system includes a dispensing vessel for holding a supply of a liquid that has an outer can and corresponding lid conjoinable to the outer can in an air-tight manner. The dispensing vessel is improved by the provision of a separate self-supporting secondary inner container removably receivable within the outer can.
11/06/14
20140326299
Solar cell with an intermediate band comprising non-stressed quantum dots
An intermediate band solar cell is provided. The intermediate band material of the intermediate band solar cell consists of a collection of quantum dots of a semiconductor material that are immersed in a volume of a second semiconductor material.
11/06/14
20140326288
Semiconductor element, thermoelectric module, method for producing a tubular thermoelectric module and motor vehicle
A semiconductor element for a thermoelectric module has opposite ends and is made of an n-doped or p-doped semiconductor material and at least one foreign material. The foreign material is mixed with the semiconductor material and forms a fraction of 25 to 75 vol % of the semiconductor element.
10/30/14
20140322901
Semiconductor nanocrystals, method for preparing, and products
A method for preparing semiconductor nanocrystals includes adding a non-protonated surface modification agent to semiconductor nanocrystal cores in a liquid medium to form a mixture; adding one or more precursors for forming a shell including a semiconductor material to the mixture under conditions for forming the shell over at least a portion of an outer surface of the cores, and adding an acid ligand to the mixture after addition of at least a portion of the one or more precursors. Semiconductor nanocrystals, other methods of making semiconductor nanocrystals, compositions and products including semiconductor nanocrystals are also disclosed..
10/30/14
20140322870
Sram cell with different crystal orientation than associated logic
An integrated circuit containing logic transistors and an array of sram cells in which the logic transistors are formed in semiconductor material with one crystal orientation and the sram cells are formed in a second semiconductor layer with another crystal orientation. A process of forming an integrated circuit containing logic transistors and an array of sram cells in which the logic transistors are formed in a top semiconductor layer with one crystal orientation and the sram cells are formed in an epitaxial semiconductor layer with another crystal orientation.
10/30/14
20140322838
Semiconductor optoelectronic device and the method of manufacturing the same
A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive layer, wherein the first electrode is connected with the transparent conductive layer by an area excluding the directly contacting part and the directly contacting corresponding part.. .
10/30/14
20140320107
Dc/dc converter, power supply circuit, and semiconductor device
Provided is a dc-dc converter with improved power conversion efficiency. A transistor which is incorporated in the dc-dc converter and functions as a switching element for controlling output power includes, in its channel formation region, a semiconductor material having a wide band gap and significantly small off current compared with silicon.
10/30/14
20140319677
Submount for electronic, optoelectronic, optical, or photonic components
One or more metal contacts are formed in a recessed area on a top surface of a submount; a pickup tool of a die bonder engages protruding peripheral regions of the submount so as not to damage the metal contacts or metal bumps in the recessed region. A semiconductor optical submount includes non-contiguous dielectric layers between metal contacts and the semiconductor material to reduce parasitic capacitance..
10/30/14
20140319536
Solid state lighting devices with cellular arrays and associated methods of manufacturing
Solid state lighting (“ssl”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface.
10/30/14
20140319518
Semiconductor device and driving method thereof
A semiconductor device has a non-volatile memory cell including a write transistor which includes an oxide semiconductor and has small leakage current in an off state between a source and a drain, a read transistor including a semiconductor material different from that of the write transistor, and a capacitor. Data is written or rewritten to the memory cell by turning on the write transistor and applying a potential to a node where one of a source electrode and drain electrode of the write transistor, one electrode of the capacitor, and a gate electrode of the read transistor are electrically connected to one another, and then turning off the write transistor so that the predetermined amount of charge is held in the node..
10/30/14
20140319509
Organic photoelectric conversion element, and solar cell and optical sensor array each using same
An organic photoelectric conversion element which sequentially comprises a transparent first electrode, a photoelectric conversion layer that contains a p-type organic semiconductor material and an n-type organic semiconductor material, and a second electrode in this order on a transparent substrate.. .
10/30/14
20140319465
Photodetection device
The invention relates to a photodetector for infrared light radiation having a given wavelength (λ), including a stack of layers consisting of: a continuous layer (11) of a partially absorbent semiconductor material, which constitutes the photodetection area; a spacer layer (12) of a material that is transparent to said wavelength and has an index ne; and a structured metal mirror (13), the distance (g) between the top of said mirror and the semiconductor layer being less than (λ)/ne and the mirror surface having a profile corresponding to the periodic repetition, according to period (p), of a basic pattern defined by the alternating series of raised surfaces (131, 132) and slots (133, 134) having the widths (l1, l2) and (l3, l4), respectively, the widths (l1) to (l4) being such that none are equal to zero, and that the sum thereof is equal to p and at least l1≠l2 or l3≠l4.. .
10/30/14
20140318623
Photovoltaic semiconductor materials based on alloys of tin sulfide, and methods of production
Photovoltaic thin-film materials comprising crystalline tin sulfide alloys of the general formula sn1-x(r)xs, where r is selected from magnesium, calcium and strontium, as well as methods of producing the same, are disclosed.. .
10/30/14
20140318593
Nanoparticle compact materials for thermoelectric application
A thermoelectric composite and a thermoelectric device and a method of making the thermoelectric composite. The thermoelectric composite is a semiconductor material formed from mechanically-alloyed powders of elemental constituents of the semiconductor material to produce nano-particles of the semiconductor material, and compacted to have at least a bifurcated grain structure.
10/23/14
20140315374
Selective epitaxial growth of semiconductor materials with reduced defects
A semiconductor device includes a substrate formed of a first semiconductor material; two insulators on the substrate; and a semiconductor region having a portion between the two insulators and over the substrate. The semiconductor region has a bottom surface contacting the substrate and having sloped sidewalls.
10/23/14
20140314254
Micromechanical detection structure for a mems acoustic transducer and corresponding manufacturing process
A micromechanical structure for a mems capacitive acoustic transducer, has: a substrate made of semiconductor material, having a front surface lying in a horizontal plane; a membrane, coupled to the substrate and designed to undergo deformation in the presence of incident acoustic-pressure waves; a fixed electrode, which is rigid with respect to the acoustic-pressure waves and is coupled to the substrate by means of an anchorage structure, in a suspended position facing the membrane to form a detection capacitor. The anchorage structure has at least one pillar element, which is at least in part distinct from the fixed electrode and supports the fixed electrode in a position parallel to the horizontal plane..
10/23/14
20140312502
Through-vias for wiring layers of semiconductor devices
Through-via structures and methods of their formation are disclosed. In one such method, a first etch through at least a first dielectric material of a wiring layer is performed such that a first hole outlining a collar structure for the through-via is formed.
10/23/14
20140312484
Electronic assembly for mounting on electronic board
An embodiment of an electronic assembly for mounting on an electronic board includes a plurality of electric contact regions exposed on a mounting surface of the electronic board. The electronic assembly includes a chip of semiconductor material in which at least one electronic component is integrated, at least one support element including a first main surface and a second main surface opposite to the first main surface, the chip being enclosed by the at least one support element, a heat dissipation plate thermally coupled to said chip to dissipate the heat produced by it, exposed on the first main surface of the support element, a plurality of contact elements, each electrically coupled to a respective electric terminal of the electronic component integrated in the chip, exposed on the same first main surface of which is exposed to the dissipation plate.
10/23/14
20140312463
Semiconductor structures, devices and engineered substrates including layers of semiconductor material having reduced lattice strain
Methods of fabricating semiconductor devices or structures include forming structures of a semiconductor material overlying a layer of a compliant material, subsequently changing the viscosity of the compliant material to relax the semiconductor material structures, and utilizing the relaxed semiconductor material structures as a seed layer in forming a continuous layer of relaxed semiconductor material. In some embodiments, the layer of semiconductor material may comprise a iii-v type semiconductor material, such as, for example, indium gallium nitride.
10/23/14
20140312420
Finfet devices containing merged epitaxial fin-containing contact regions
A plurality of semiconductor fins are formed which extend from a semiconductor material portion that is present atop an insulator layer of a semiconductor-on-insulator substrate. A gate structure and adjacent gate spacers are formed that straddle each semiconductor fin.
10/23/14
20140312419
Finfet devices containing merged epitaxial fin-containing contact regions
A plurality of semiconductor fins are formed which extend from a semiconductor material portion that is present atop an insulator layer of a semiconductor-on-insulator substrate. A gate structure and adjacent gate spacers are formed that straddle each semiconductor fin.
10/23/14
20140312346
Semiconductor device and manufacturing method thereof
An object is to provide a semiconductor device with a novel structure. A semiconductor device includes a first transistor, which includes a channel formation region provided in a substrate including a semiconductor material, impurity regions, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode, and a second transistor, which includes an oxide semiconductor layer over the substrate including the semiconductor material, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode.
10/23/14
20140312317
Organic semiconductor material and thin-film transistor
Wherein r and s each independently represent a positive integer of 1 to 20; n represents a positive integer of 2 to 10000; x1, x2 and x3 each independently represent o, s, se, te, nr, rcr, rsir, rger or rsnr; y1 and y2 each independently represent h, f, cl, cf3, haloalkyl, cn, r, or, sr, coor or cor; and z1, z2, z3 and z4 each independently represent h, f, cl, cf3, haloalkyl, cn, r, or, sr, coor or cor, wherein r represents alkyl group.. .
10/23/14
20140312300
Semiconductor nanocrystals and compositions and devices including same
A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency.
10/23/14
20140312239
Microelectronic displacement damage dose detector
A device is described that includes sensors that are sensitive to displacement damage, and can be configured to display a characteristic damage curve. The sensors, or diodes, can be made of one or more semiconductor materials that are sensitive to displacement damage, and can be operated in dark illumination conditions.
10/16/14
20140308793
Varactor diode, electrical device and method for manufacturing same
An electrical device includes a semiconductor material. The semiconductor material includes a first region of the semiconductor material having a first conductivity type, a second region of the semiconductor material having a second conductivity type complementary to the first conductivity type and an intermediate region of the semiconductor material between the first region and the second region.
10/16/14
20140308790
Methods for manufacturing devices with source/drain structures
In a method, a gate structure is formed over a substrate, and source/drain (s/d) features are formed in the substrate and interposed by the gate structure. At least one of the s/d features is formed by forming a first semiconductor material including physically discontinuous portions, forming a second semiconductor material over the first semiconductor material, and forming a third semiconductor material over the second semiconductor material.
10/16/14
20140308782
Self-limiting selective epitaxy process for preventing merger of semiconductor fins
A self-limiting selective epitaxy process can be employed on a plurality of semiconductor fins such that the sizes of raised active semiconductor regions formed by the selective epitaxy process are limited to dimensions determined by the sizes of the semiconductor fins. Specifically, the self-limiting selective epitaxy process limits growth of the semiconductor material along directions that are perpendicular to crystallographic facets formed during the selective epitaxy process.
10/16/14
20140307511
Non-volatile memory cell with self aligned floating and erase gates, and method of making same
A memory device, and method of making the same, in which a trench is formed into a substrate of semiconductor material. The source region is formed under the trench, and the channel region between the source and drain regions includes a first portion that extends substantially along a sidewall of the trench and a second portion that extends substantially along the surface of the substrate.
10/16/14
20140306327
Semiconductor device and method of manufacturing thereof
A semiconductor device includes a device carrier and a semiconductor chip attached to the device carrier. Further, the semiconductor device includes a lid having a recess.
10/16/14
20140306323
Semiconductor constructions
Some embodiments include semiconductor constructions having semiconductor material patterned into two mesas spaced from one another by at least one dummy projection. The dummy projection has a width along a cross-section of x and the mesas have widths along the cross-section of at least 3x.
10/16/14
20140306320
Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters
Methods of fabricating semiconductor devices or structures include bonding a layer of semiconductor material to another material at a temperature, and subsequently changing the temperature of the layer of semiconductor material. The another material may be selected to exhibit a coefficient of thermal expansion such that, as the temperature of the layer of semiconductor material is changed, a controlled and/or selected lattice parameter is imparted to or retained in the layer of semiconductor material.
10/09/14
20140303043
Reversible reaction sensors and assemblies
A reversible reaction sensor provides for detecting medical, biologic or explosive airborne compounds. The sensor may be formed in semiconductor material and is activated by radiation from sources to provide sensing of particular airborne compounds optically detectable by detectors, and reversed by other radiation from a source (or removal of activating radiation) to take away such airborne compounds from the sensor.
10/09/14
20140302658
Transistor with improved sigma-shaped embedded stressor and method of formation
A method and structure of an embedded stressor in a semiconductor transistor device having a sigma-shaped channel sidewall and a vertical isolation sidewall. The embedded stressor structure is made by a first etch to form a recess in a substrate having a gate and first and second spacers.
10/09/14
20140302653
Finlike structures and methods of making same
Semiconductor materials, particularly iii-v materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material.
10/09/14
20140302650
Charge storage apparatus and methods
Methods of forming multi-tiered semiconductor devices are described, along with apparatus and systems that include them. In one such method, an opening is formed in a tier of semiconductor material and a tier of dielectric.
10/09/14
20140302649
Semiconductor field-effect transistor, memory cell and memory device
Semiconductor device formed by a first conductive strip of semiconductor material; a control gate region of semiconductor material, facing a channel portion of the first conductive strip, and an insulation region arranged between the first conductive strip and the control gate region. The first conductive strip includes a conduction line having a first conductivity type and a control line having a second conductivity type, arranged adjacent and in electrical contact with each other, and the conduction line forms the channel portion, a first conduction portion and a second conduction portion arranged on opposite sides of the channel portion..
10/09/14
20140301126
Memory arrays and methods of forming electrical contacts
Some embodiments include methods of forming electrical contacts. A row of semiconductor material projections may be formed, with the semiconductor material projections containing repeating components of an array, and with a terminal semiconductor projection of the row comprising a contact location.
10/09/14
20140299968
Semiconductor devices and fabrication methods
A method of making a semiconductor device comprises : providing a semiconductor wafer having a semiconductor layer; forming a first mask layer over the semiconductor layer; forming a second mask layer over the first mask layer; annealing the second mask layer to form islands; etching through the first mask layer and the semiconductor layer using the islands as a mask to form an array of pillars; and growing semiconductor material between the pillars and then over the tops of the pillars.. .
10/09/14
20140299885
Substrate structures and semiconductor devices employing the same
A substrate structure includes a substrate, a nucleation layer on the substrate and including a group iii-v compound semiconductor material having a lattice constant that is different from that of the substrate by less than 1%, and a buffer layer on the nucleation layer and including first and second layers, wherein the first and second layers include group iii-v compound semiconductor materials having lattice constants that are greater than that of the nucleation layer by 4% or more.. .
10/09/14
20140299882
Integrated fin and strap structure for an access transistor of a trench capacitor
At least one dielectric pad layer is formed on a semiconductor-on-insulator (soi) substrate. A deep trench is formed in the soi substrate, and a combination of an outer electrode, a node dielectric, and an inner electrode are formed such that the top surface of the inner electrode is recessed below the top surface of a buried insulator layer of the soi substrate.
10/09/14
20140299871
Organic field effect transistor
The present invention provides an electronic component or device comprising a gate electrode, a source electrode and a drain electrode, wherein said component or device further comprising an organic semiconducting (osc) material that is provided between the source and drain electrode, wherein the osc material comprises (a) a polymer represented by formula: (i), and (b) a compound of formula (ii). High quality ofets can be fabricated by the choice of a semiconductor material, which is comprised of a polymer represented by formula i and (b) a compound of formula ii..
10/09/14
20140299585
Laser cladding method
In a laser cladding method, a laser beam is emitted from a semiconductor laser to melt alloy powder for laser cladding on the surface of a hydraulic support column. The semiconductor laser is a laser functioning with semiconductor material as gain medium and lighting by means of semiconductor material transition among energy bands.
10/02/14
20140295606
Method for producing a device comprising cavities formed between a suspended element resting on insulating pads semi-buried in a substrate and this substrate
A method for producing a device including plural cavities defined between a substrate in at least one given semiconductor material and a membrane resting on a top of insulating posts projecting from the substrate, the method allowing a height of the cavity or cavities to be adapted independently of a height of the insulating posts and allowing cavities of different heights to be formed.. .
10/02/14
20140293724
Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features
Systems and methods are disclosed for providing selective threshold voltage characteristics via use of mos transistors having differential threshold voltages. In one exemplary embodiment, there is provided a metal oxide semiconductor device comprising a substrate of semiconductor material having a source region, a drain region and a channel region therebetween, an insulating layer over the channel region, and a gate portion of the insulating layer.
10/02/14
20140291850
Method for manufacturing electronic devices
An embodiment for manufacturing electronic devices is proposed. The embodiment includes the following phases: a) forming a plurality of chips in a semiconductor material wafer including a main surface; each chip includes respective integrated electronic components and respective contact pads facing the main surface; said contact pads are electrically coupled to the integrated electronic components; b) attaching at least one conductive ribbon to at least one contact pad of each chip; c) covering the main surface of the semiconductor material wafer and the at least one conductive ribbon with a layer of plastic material; d) lapping an exposed surface of the layer of plastic material to remove a portion of the plastic material layer at least to uncover portions of the at least one conductive ribbon, and e) sectioning the semiconductor material wafer to separate the chips..
10/02/14
20140291810
Methods for growing iii-v materials on a non iii-v material substrate
The present invention relates to a method for manufacturing semiconductor materials comprising epitaxial growing of group iii-v materials, for example gallium arsenide (gaas), on for example a non iii-v group material like silicon (si) substrates (wafers), and especially to pre-processing steps providing a location stabilisation of dislocation faults in a surface layer of the non iii-v material wafer in an orientation relative to an epitaxial material growing direction during growing of the iii-v materials, wherein the location stabilised dislocation fault orientations provides a barrier against threading dislocations (stacking of faults) from being formed in the growing direction of the iii-v materials during the epitaxial growth process.. .
10/02/14
20140291809
Semiconductor substrate and a method of manufacturing the same
The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes acceptor or donor impurity atoms or crystal defects, whose energy levels are located at least 120 mev from the conduction band edge, as well as from the valence band edge in the bandgap; and wherein the concentration of the impurity atoms or crystal defects is larger than 1×1012 cm−3.. .
10/02/14
20140291794
Microchannel avalanche photodiode (variants)
The invention is directed to an avalanche photodiode containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate. The avalanche photodiode may be characterized by the presence in the device of at least one matrix consisting of separate solid-state areas with enhanced conductivity surrounded by semiconductor material with the same type of conductivity.
10/02/14
20140291624
Organic light emitting device display and manufacturing method thereof
Provided is an organic light emitting display including a pixel circuit unit prepared over a substrate and comprising a plurality of thin film transistors (tfts), and an organic light emitting device or diode (oled) electrically connected to the pixel circuit unit. The pixel circuit unit and the oled are connected through a repair unit comprising a semiconductor material, in order to facilitate easy repair..
10/02/14
20140291602
Oxide memory resistor including semiconductor nanoparticles
This invention relates to memory resistors, arrays of memory resistors and a method of making memory resistors. In particular, this invention relates to memory resistors having an on state and an off state, comprising: (a) a first electrode; (b) a second electrode; (c) a dielectric layer disposed between the first and second electrodes; wherein the dielectric layer comprises nanoparticles of semiconductor material, and wherein in the on state nanoparticles form at least one conductive filament encapsulated by the dielectric layer, thereby providing a conductive pathway between the first electrode and the second electrode..
10/02/14
20140291481
Enhanced photon detection device with biased deep trench isolation
A photon detection device includes a photodiode having a planar junction disposed in a first region of semiconductor material. A deep trench isolation (dti) structure is disposed in the semiconductor material.
10/02/14
20140291152
Microreactor and method for loading a liquid
A microreactor includes: a substrate (2; 102; 202) made of semiconductor material; a plurality of wells (5; 105; 205) separated by walls (6; 106; 206) in the substrate (2; 102; 202); a dielectric structure (7; 107; 207a, 207b) coating at least the top of the walls (6; 106; 206); a cap (3; 103; 203), bonded to the substrate (2; 102; 202) and defining a chamber (10; 110; 210) above the wells (5; 105; 205); and a biasing structure (2, 8, 13; 102, 108, 113; 202, 208a, 208b, 213), configured for setting up a voltage (vb) between the substrate (2; 102; 202) and the chamber (10; 110; 210).. .


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Semiconductor Material topics: Semiconductor, Semiconductor Material, Semiconductor Device, Transistors, Surfactant, Electric Conversion, Transparent Conductive Oxide, Semiconductor Substrate, Heating Devices, Semiconductor Devices, Organic Electroluminescence, Buffer Layer, Integrated Circuit, Crystallin, Electronic Device

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