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Semiconductor Material

Semiconductor Material-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Illuminator with engineered illumination pattern
Intel Corporation
December 07, 2017 - N°20170353641

Techniques for tuning the illumination pattern of a light emitting diode (led) are described. An example image capture system incorporates an led with an integrated micro-reflector. The example image capture system includes a camera to capture an image of an object and a light emitting diode (led) to emit light for illuminating the object. The led includes a light emitting ...
Apparatus and method for forming organic thin film transistor
Hon Hai Precision Industry Co., Ltd.
December 07, 2017 - N°20170352825

A method for forming an organic thin film transistor is provided. An organic semiconductor layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer are formed on an insulating substrate. A method for forming the organic semiconductor layer is provided. An evaporating source is provided, and the evaporating source and the insulating substrate are spaced from ...
Electronic memory devices
Lancaster University Business Enterprises Limited
December 07, 2017 - N°20170352767

A memory cell for storing one or more bits of information has a control gate, a source terminal and a drain terminal. A semiconductor substrate is located between the source and drain terminals, and a floating gate is disposed between the control gate and the semiconductor substrate. The floating gate is electrically isolated from the control gate by a charge ...
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Single-electron transistor with self-aligned coulomb blockade
International Business Machines Corporation
December 07, 2017 - N°20170352751

Semiconductor devices and methods of making the same include forming a gate structure on a thin semiconductor layer. Additional semiconductor material is formed on the thin semiconductor layer. The thin semiconductor layer is etched back and the additional semiconductor material to form source and drain regions and a channel region, with notches separating the source and drain region from the ...
Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making ...
Sandisk Technologies Llc
December 07, 2017 - N°20170352678

Lower level metal interconnect structures are formed over a substrate with semiconductor devices thereupon. A semiconductor material layer and an alternating stack of spacer dielectric layers and insulating layers is formed over the lower level metal interconnect structures. An array of memory stack structures is formed through the alternating stack. Trenches are formed through the alternating stack such that a ...
Collars for under-bump metal structures and associated systems and methods
Micron Technology, Inc.
December 07, 2017 - N°20170352633

The present technology is directed to manufacturing collars for under-bump metal (ubm) structures for die-to-die and/or package-to-package interconnects and associated systems. A semiconductor die includes a semiconductor material having solid-state components and an interconnect extending at least partially through the semiconductor material. An under-bump metal (ubm) structure is formed over the semiconductor material and is electrically coupled to corresponding ...
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Semiconductor Material Patent Applications
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  • Exact USPTO filing data with full-text, images, drawings & claims.
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Semiconductor device and manufacturing method thereof
Semiconductor Energy Laboratory Co., Ltd.
December 07, 2017 - N°20170352551

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities ...
A method of epitaxial growth of a material interface between group iii-v materials and silicon ...
Integrated Solar
December 07, 2017 - N°20170352536

The present invention relates to a method of manufacturing semiconductor materials comprising interface layers of group iii-v materials in combination with si substrates. Especially the present invention is related to a method of manufacturing semiconductor materials comprising gaas in combination with si(111) substrates, wherein residual strain due to different thermal expansion coefficient of respective materials is counteracted by introducing added ...
Facilitating improved luminance uniformity in organic light emitting diode device panels
City University Of Hong Kong
November 30, 2017 - N°20170347424

An apparatus facilitating luminosity uniformity across an organic light emitting diode (oled) device is provided. In one embodiment, the method includes: operating an organic light emitting diode (oled) device including an anode; a semiconductor material coupled to the anode; and a cathode coupled to the semiconductor material. The method also includes dissipating heat of the oled device in a defined ...
Three primary colors white light oled element structure, and electro luminescent device and display element ...
Shenzhen China Star Optoelectronics Technology Co. Ltd.
November 30, 2017 - N°20170346030

Disclosed is a three primary colors white light oled element structure. The element structure includes: a substrate, an anode on the substrate, a p type doping layer on the anode, a first light emitting layer on the p type doping layer, a first n type semiconductor material layer on the first light emitting layer, a first p type semiconductor material ...
Composition for forming organic semiconductor film, organic thin film transistor, electronic paper, and display device
Fujifilm Corporation
November 30, 2017 - N°20170346018

An object of the present invention is to provide a composition for forming an organic semiconductor film that is excellent in printing properties and makes is possible to prepare an organic thin film transistor excellent in mobility and insulation reliability. Another object of the present invention is to provide an organic thin film transistor, electronic paper, and a display device. ...
Light emitting diodes and associated methods of manufacturing
Micron Technology, Inc.
November 30, 2017 - N°20170345972

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (led) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface ...
Surface mount solar cell with integrated coverglass
Solar Junction Corporation
November 30, 2017 - N°20170345955

Photovoltaic cells, methods for fabricating surface mount multijunction photovoltaic cells, methods for assembling solar panels, and solar panels comprising photovoltaic cells are disclosed. The surface mount multijunction photovoltaic cells include through-wafer-vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively ...
Semiconductor Material Patent Pack
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Semiconductor Material Patent Applications
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inventor
  • 693+ full patent PDF documents of Semiconductor Material-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Method for forming semiconductor structure
United Microelectronics Corp.
November 30, 2017 - N°20170345937

A method for manufacturing a semiconductor structure includes the following steps. First, a semiconductor substrate including a first semiconductor material is provided. The semiconductor substrate includes a dielectric structure formed thereon, and the dielectric structure includes at least a recess formed therein. A first epitaxial layer is then formed in the recess. The first epitaxial layer includes at least a ...
Wide-bandgap semiconductor device with trench gate structures
Infineon Technologies Ag
November 30, 2017 - N°20170345905

A semiconductor device includes trench gate structures extending from a first surface into a semiconductor body from a wide-bandgap semiconductor material. The trench gate structures separate mesa portions of the semiconductor body from each other. In the mesa portions, body regions form first pn junctions with a drain structure and directly adjoin first mesa sidewalls. Source regions in the mesa ...
Device for detecting electromagnetic radiation consisting of organic materials
Isorg
November 30, 2017 - N°20170345872

The invention relates to a device for detecting electromagnetic radiation, said device comprising at least one row of photoresistors (45), each photoresistor comprising an active portion comprising organic semiconductor materials.
Solid-state imaging device
Panasonic Intellectual Property Management Co, Ltd.
November 30, 2017 - N°20170345865

A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the ...
Graded-semiconductor image sensor
Omnivision Technologies, Inc.
November 30, 2017 - N°20170345851

An image sensor includes a semiconductor material having an illuminated surface and a non-illuminated surface. A plurality of photodiodes is disposed in the semiconductor material to receive image light through the illuminated surface. The semiconductor material includes silicon and germanium, and the germanium concentration increases in a direction of the non-illuminated surface. A plurality of isolation regions is disposed between ...
Ferroelectric devices and methods of forming ferroelectric devices
Micron Technology, Inc.
November 30, 2017 - N°20170345831

Some embodiments include a ferroelectric device comprising ferroelectric material adjacent an electrode. The device includes a semiconductor material-containing region along a surface of the ferroelectric material nearest the electrode. The semiconductor material-containing region has a higher concentration of semiconductor material than a remainder of the ferroelectric material. The device may be, for example, a transistor or a capacitor. The device ...
Semiconductor device and method of manufacturing semiconductor device
Olympus Corporation
November 30, 2017 - N°20170345806

A semiconductor device includes a first substrate, an insulation layer, and a first electrode. The first substrate contains a first semiconductor material. The insulation layer includes a first surface, a second surface, and a third surface. The first electrode includes a fourth surface, a fifth surface, and a sixth surface, and contains a porous first conductive material. The second surface ...
Integrated circuit structure with active and passive devices in different tiers
Taiwan Semiconductor Manufacturing Company, Ltd.
November 30, 2017 - N°20170345791

An integrated circuit structure includes a two-tier die including a first tier and a second tier over and bonded to the first tier. The first tier includes a first substrate including a semiconductor material, an active device at a surface of the first substrate, and a first interconnect structure over the first substrate, wherein the first tier is free from ...
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