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Semiconductor Material

Semiconductor Material-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Cadmium-free quantum dot nanoparticles
Nanoco Technologies Ltd.
February 15, 2018 - N°20180047878

Quantum dot semiconductor nanoparticle compositions that incorporate ions such as zinc, aluminum, calcium, or magnesium into the quantum dot core have been found to be more stable to ostwald ripening. A core-shell quantum dot may have a core of a semiconductor material that includes indium, magnesium, and phosphorus ions. Ions such as zinc, calcium, and/or aluminum may be included ...
Protective capping layer for spalled gallium nitride
International Business Machines Corporation
February 15, 2018 - N°20180047875

A method of producing a semiconductor device includes forming a stack including a semiconductor material having a group iii nitride semiconductor material formed on a growth substrate, a protective layer formed over the group iii nitride semiconductor material, and a handle layer and a stressor layer formed over the protective layer. The stack is spalled to separate the growth substrate ...
Techniques for forming non-planar germanium quantum well devices
Intel Corporation
February 15, 2018 - N°20180047839

Techniques are disclosed for forming a non-planar germanium quantum well structure. In particular, the quantum well structure can be implemented with group iv or iii-v semiconductor materials and includes a germanium fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure having a substrate (e. G. Sige or gaas buffer on ...
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Self-aligned inner-spacer replacement process using implantation
International Business Machines Corporation
February 15, 2018 - N°20180047834

A method for manufacturing a semiconductor device includes forming a stacked configuration of first and second semiconductor layers on a semiconductor substrate, wherein the stacked configuration comprises a repeating arrangement of a second semiconductor layer stacked on a first semiconductor layer, forming a plurality of dummy gates spaced apart from each other on the stacked configuration, wherein the plurality of ...
Methods and apparatus for improving micro-led devices
Oculus Vr, Llc
February 15, 2018 - N°20180047782

A μled device comprising: a substrate and an epitaxial layer grown on the substrate and comprising a semiconductor material, wherein at least a portion of the substrate and the epitaxial layer define a mesa; an active layer within the mesa and configured, on application of an electrical current, to generate light for emission through a light emitting surface ...
Deep trench isolation structure and method of forming same
Taiwan Semiconductor Manufacturing Company, Ltd.
February 15, 2018 - N°20180047777

Deep trench isolation (dti) structures and methods of forming the same are provided. A method includes forming a plurality of photosensitive regions in a substrate. A recess is formed in the substrate, the substrate comprising a first semiconductor material, the recess being interposed between adjacent photosensitive regions. The recess is enlarged by removing a damaged layer of the substrate along ...
Semiconductor Material Patent Pack
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Semiconductor Material Patent Applications
Download 693+ Semiconductor Material-related PDFs
For professional research & prior art discovery
inventor
  • 693+ full patent PDF documents of Semiconductor Material-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Semiconductor device
Semiconductor Energy Laboratory Co., Ltd.
February 15, 2018 - N°20180047730

The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic ...
Iii-v compatible anti-fuses
International Business Machines Corporation
February 15, 2018 - N°20180047669

An anti-fuse is provided above a semiconductor material. The anti-fuse includes a first end region including a first metal structure; a second end region including a second metal structure; and a middle region located between the first end region and the second end region. In accordance with the present application, the middle region of the anti-fuse includes at least a ...
Semiconductor resistor structures embedded in a middle-of-the-line (mol) dielectric
International Business Machines Corporation
February 15, 2018 - N°20180047668

A resistor structure composed of a metal liner is embedded within a mol dielectric material and is located, at least in part, on a surface of a doped semiconductor material structure. The resistor structure is located on a same interconnect level of the semiconductor structure as a lower contact structure and both structures are embedded within the same mol dielectric ...
Transistor device structures with retrograde wells in cmos applications
Globalfoundries Inc.
February 15, 2018 - N°20180047641

A device includes a substrate having an n-active region and a p-active region, a layer of silicon-carbon positioned on an upper surface of the n-active region, a first layer of a first semiconductor material positioned on the layer of silicon-carbon, a second layer of the first semiconductor material positioned on an upper surface of the p-active region, and a layer ...
Method for manufacturing semiconductor substrate
Mtec Corporation
February 15, 2018 - N°20180047630

A method for manufacturing a semiconductor substrate according to the present invention includes a hydrogen layer forming step of forming a hydrogen layer on a first substrate formed of single crystal of a first semiconductor material, a bonding step of bonding the first substrate and a temporary substrate, a first separation step of separating the first substrate with the hydrogen ...
Thermally stable charge trapping layer for use in manufacture of semiconductor-on-insulator structures
Sunedison Semiconductor Limited
February 15, 2018 - N°20180047614

A single crystal semiconductor handle substrate for use in the manufacture of semiconductor-on-insulator (e. G., silicon-on-insulator (soi)) structure is etched to form a porous layer in the front surface region of the wafer. The etched region is oxidized and then filled with a semiconductor material, which may be polycrystalline or amorphous. The surface is polished to render it bondable to ...
Semiconductor device and method of manufacturing the semiconductor device
Infineon Technologies Dresden Gmbh
February 15, 2018 - N°20180047582

A method of manufacturing a semiconductor device includes forming an etching mask over a semiconductor body, forming a plurality of trenches in the semiconductor body to define a plurality of protruding semiconductor portions between adjacent trenches, and forming a protection layer in contact with a semiconductor material of the protruding semiconductor portions. The method further includes performing a wet etching ...
Semiconductor Material Patent Pack
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Semiconductor Material Patent Applications
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For professional research & prior art discovery
inventor
  • 693+ full patent PDF documents of Semiconductor Material-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Tsv testing method and apparatus
Texas Instruments Incorporated
February 15, 2018 - N°20180045776

An integrated circuit die includes a substrate of semiconductor material having a top surface, a bottom surface, and an opening through the substrate between the top surface and the bottom surface. A through silicon via (tsv) has a conductive body in the opening, has a top contact point coupled to the body at the top surface, and has a bottom ...
Crosstalk suppression in wireless testing of semiconductor devices
Stmicroelectronics S.r.l.
February 15, 2018 - N°20180045775

An integrated circuit is fabricated on a semiconductor material die and adapted to be at least partly tested wirelessly. Circuitry for setting a selected radio communication frequency to be used for the wireless test of the integrated circuit is integrated on the semiconductor material die.
Process for manufacturing a semiconductor device including a microelectromechanical structure and an associated integrated electronic ...
Stmicroelectronics S.r.l.
February 15, 2018 - N°20180044168

A process for manufacturing an integrated semiconductor device, envisages: forming a mems structure; forming an asic electronic circuit; and electrically coupling the mems structure to the asic electronic circuit. The mems structure and the asic electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the mems structure is formed at a first surface of the substrate, ...
Linear-logarithmic image sensor
Omnivision Technologies, Inc.
February 08, 2018 - N°20180041723

A pixel array for use in a high dynamic range image sensor includes a plurality of pixels arranged in a plurality of rows and columns in the pixel array. Each one of the pixels includes a linear subpixel and a log subpixel disposed in a semiconductor material. The linear subpixel is coupled to generate a linear output signal having a ...
Coated wavelength converting nanoparticles
Lumileds Llc
February 08, 2018 - N°20180040783

Embodiments of the invention include a luminescent material. Particles of the luminescent material include a core of a first semiconductor material, a first shell of a second semiconductor material surrounding the core, a second shell of an insulating material disposed on a surface of the first shell, and a coating disposed on a surface of the second shell. The core ...
Optoelectronic semiconductor body and method of producing an optoelectronic semiconductor body
Osram Opto Semiconductors Gmbh
February 08, 2018 - N°20180040772

An optoelectronic semiconductor body includes a carrier, a semiconductor layer sequence having a first layer of a first conductivity type, a second layer of a second conductivity type and an active layer, wherein the first layer faces the carrier and the active layer generates or absorbs electromagnetic radiation when operated in its intended operation mode, and at least one through-via ...
Semiconductor light emitting device and method of manufacturing the same
Samsung Electronics Co., Ltd.
February 08, 2018 - N°20180040768

A semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device, the device including a substrate; a first conductive semiconductor layer on one surface of the substrate; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a plurality of protrusions on the second conductive semiconductor layer, ...
Semiconductor nanocrystals
Massachusetts Institute Of Technology
February 08, 2018 - N°20180040749

A semiconductor nanocrystal include a first semiconductor material and have a luminescence quantum yield of at least 10%, at least 20%, or at least 30%. The nanocrystal can be substantially free of toxic elements. Populations of the nanocrystals can have an emission fwhm of no greater than 0. 35 ev.
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