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Semiconductor Material

Semiconductor Material-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Image sensor color correction
Omnivision Technologies, Inc.
June 22, 2017 - N°20170180662

An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of transfer transistors. Individual transfer transistors in the plurality of transfer transistors are coupled to individual photodiodes in the plurality of photodiodes. A floating diffusion is also coupled to the plurality of transfer transistors to receive image charge from the plurality of photodiodes. The ...
Organic semiconductor composition, organic thin film transistor, electronic paper, and display device
Fujifilm Corporation
June 22, 2017 - N°20170179387

The present invention provides an organic semiconductor composition which makes it possible to prepare an organic thin film transistor having excellent insulation reliability while inhibiting the deterioration of mobility, and to provide an organic thin film transistor prepared using the composition. Furthermore, the present invention provides electronic paper and a display device which contain the organic thin film transistor. The ...
Optical semiconductor device and method for making the device
Katholieke Universiteit Leuven, Ku Leuven R&d
June 22, 2017 - N°20170179337

An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the ...
Semiconductor Material Patent Pack
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Semiconductor Material Patent Applications
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  • 693+ full patent PDF documents of Semiconductor Material-related inventions.
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Method of manufacturing photoelectric conversion element, photoelectric conversion element, and photoelectric conversion device
Seiko Epson Corporation
June 22, 2017 - N°20170179311

A method of manufacturing a photoelectric conversion element including a semiconductor layer includes: forming an electrode; forming an insulating layer covering the electrode; forming an opening in a region of the insulating layer overlapping the electrode in a plan view; forming a covering layer of a semiconductor material on a surface of the insulating layer; and forming the semiconductor layer ...
Iii-v transistor device with self-aligned doped bottom barrier
International Business Machines Corporation
June 22, 2017 - N°20170179288

A semiconductor device comprises a first layer of a substrate arranged on a second layer of the substrate the second layer of the substrate including a doped iii-v semiconductor material barrier layer, a gate stack arranged on a channel region of the first layer of a substrate, a spacer arranged adjacent to the gate stack on the first layer of ...
Nanowire semiconductor device
International Business Machines Corporation
June 22, 2017 - N°20170179251

A method for forming a nanowire device comprises depositing a hard mask on portions of a silicon substrate having a <110> orientation wherein the hard mask is oriented in the <112> direction, etching the silicon substrate to form a mandrel having (111) faceted sidewalls; forming a layer of insulator material on the substrate; forming a ...
Semiconductor Material Patent Pack
Download 693+ patent application PDFs
Semiconductor Material Patent Applications
Download 693+ Semiconductor Material-related PDFs
For professional research & prior art discovery
inventor
  • 693+ full patent PDF documents of Semiconductor Material-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Iii-v field effect transistor on a dielectric layer
International Business Machines Corporation
June 22, 2017 - N°20170179237

An electrical device comprising a base semiconductor layer of a silicon including material; a dielectric layer present on the base semiconductor layer; a first iii-v semiconductor material area present in a trench in the dielectric layer, wherein a via of the iii-v semiconductor material extends from the trench through the dielectric layer into contact with the base semiconductor layer; a ...
Superlattice lateral bipolar junction transistor
International Business Machines Corporation
June 22, 2017 - N°20170179229

A bipolar junction transistor includes an intrinsic base formed on a substrate. The intrinsic base includes a superlattice stack including a plurality of alternating layers of semiconductor material. A collector and emitter are formed adjacent to the intrinsic base on opposite sides of the base. An extrinsic base structure is formed on the intrinsic base.
Curved image sensor
Omnivision Technologgies, Inc.
June 22, 2017 - N°20170179189

An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material with pinning wells disposed between individual photodiodes in the plurality of photodiodes. The image sensor also includes a microlens layer. The microlens layer is disposed proximate to the semiconductor material and is optically aligned with the plurality of photodiodes. A spacer layer ...
Semiconductor device
Semi Conductor Devices-an Elbit Systems-rafael Partnership
June 22, 2017 - N°20170179185

A semiconductor device is disclosed, which includes: at least one device layer being a crystallized layer for example including: a superlattice layer and/or a layer of group iii-v semiconductor materials; and a passivation structure comprising one or more layers wherein at least one layer of the passivation structure is a passivation layer grown in-situ in a crystallized form on ...
Semiconductor device for wafer-scale integration
Ams Ag
June 22, 2017 - N°20170179183

The semiconductor device comprises a semiconductor wafer with an integrated circuit, formed by a plurality of dies, a further semiconductor wafer, which differs from the semiconductor wafer in diameter and semiconductor material, the semiconductor wafer and the further semiconductor wafer being bonded to one another by means of a bonding layer, and an electrically conductive contact layer arranged on the ...
Method and device for reducing finfet self-heating effect
Semiconductor Manufacturing International (shanghai) Corporation
June 22, 2017 - N°20170179129

A method of manufacturing a semiconductor device includes providing a semiconductor substrate, forming a diamond film on the substrate, etching the diamond film to form a first trench that extends to the substrate, epitaxially growing a first semiconductor material in the first trench to form a first semiconductor fin structure, and removing an upper portion of the diamond film to ...
Nanosheet cmos with hybrid orientation
International Business Machines Corporation
June 22, 2017 - N°20170179128

A semiconductor structure is provided that includes a substrate comprising a first semiconductor material having a first crystallographic orientation and a first device region and a second device region. First vertically stacked and suspended nanosheets of semiconductor channel material of the first crystallographic orientation are located above the substrate and within the first device region. Second vertically stacked and suspended ...
Semiconductor Material Patent Pack
Download 693+ patent application PDFs
Semiconductor Material Patent Applications
Download 693+ Semiconductor Material-related PDFs
For professional research & prior art discovery
inventor
  • 693+ full patent PDF documents of Semiconductor Material-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Thermoelectric cooler having a solderless electrode
Intel Corporation
June 22, 2017 - N°20170179000

Thermoelectric coolers having solderless electrical interconnects, and semiconductor packages incorporating such thermoelectric coolers, are described. In an example, a thermoelectric cooler includes a solderless electrode electrically connecting a p-type semiconductor column to an n-type semiconductor column, and the solderless electrode is in direct contact with diffusion barrier layers separating the solderless electrode from the p-type and n-type semiconductor material layers ...
Method for manufacturing a si-based high-mobility cmos device with stacked channel layers, and resulting devices
Imec Vzw
June 22, 2017 - N°20170178971

A device and method for manufacturing a si-based high-mobility cmos device is provided. The method includes the steps of: (i) providing a silicon substrate having a first insulation layer on top and a trench into the silicon; (ii) manufacturing a iii-v semiconductor channel layer above the first insulation layer by depositing a first dummy layer of a sacrificial material, covering ...
Method of authenticating integrated circuits using optical characteristics of physically unclonable functions
Honeywell Federal Manufacturing & Technologies, Llc
June 22, 2017 - N°20170177853

A method and apparatus for reading unique identifiers of an integrated circuit. The unique identifiers may be physically unclonable functions (pufs), formed by high energy ions implanted into semiconductor material of the integrated circuit. The method may include electrically or optically stimulating each of the pufs and sensing with an optical sensor optical characteristics of resulting light emitted from the ...
Method for calibrating an annealing furnace used to form thermal donors
Commissariat A L'energie Atomique Et Aux Energies Alternatives
June 22, 2017 - N°20170176105

A method for calibrating a furnace enabling a semiconductor material to be subjected to a first thermal donor formation annealing that includes a temperature rise, a first temperature plateau and a temperature drop of the furnace, the method to including providing a calibration piece of the semiconductor material; determining the interstitial oxygen concentration of the piece; subjecting the piece to ...
Small aperture formation for facilitating optoelectronic device integration with defective semiconductor materials
International Business Machines Corporation
June 15, 2017 - N°20170170632

In one example, a device includes a layered semiconductor material having material defects formed therein and an optoelectronic device formed in the layered semiconductor material. The optoelectronic device includes an active region comprising an aperture formed through the layered semiconductor material. The aperture is formed in a manner that avoids intersection with the material defects.
Multijunction solar cells with electrically conductive polyimide adhesive
Solaero Technologies Corp.
June 15, 2017 - N°20170170355

A solar cell including a sequence of layers of semiconductor material forming a solar cell; a metal contact layer over said sequence of layers; a permanent supporting substrate composed of a carbon fiber reinforced polymer utilizing a conductive polyimide binding resin disposed directly over said metal contact layer and permanently bonding thereto.
Method for producing a uv photodetector
Merck Patent Gmbh
June 15, 2017 - N°20170170345

This invention relates to a method for producing a photodetector based on the deposition of precursor system having a liquid phase. The photodetectors are characterized by a certain group of semiconductor materials which can be used as the absorber in solar-blind uv detectors. A facile route for the formation of thin layers of such absorber materials is disclosed.
Optoelectronic device and method of producing the same
Big Solar Limited
June 15, 2017 - N°20170170343

An optoelectronic device and method of producing the same. The optoelectronic device comprising a substrate having a first and a second substantially planar face and an aperture therein, the aperture passing through and penetrating the first and second substantially planar faces of the substrate. The aperture has a first and a second face defining a space therebetween. The space is ...
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