Images List Premium Download Classic

Semiconductor Devices

Semiconductor Devices-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


loading
Pick arm comprising a winged part for a bonding apparatus
Asm Technology Singapore Pte Ltd
August 17, 2017 - N°20170238449

A pick arm for a pick and place apparatus for semiconductor devices, the pick arm comprising first and second ends along a longitudinal axis of the pick arm, and a pick tool located at the first end of the pick arm for picking up semiconductor devices. The pick arm further comprises a winged part extending in a direction transverse to ...
Azinothiadiazole compounds and related semiconductor devices
Polyera Corporation
August 17, 2017 - N°20170237010

The present invention relates to new semiconducting compounds having at least one optionally substituted azino[1,2,3]thiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
Process for preparing a crystalline organic semiconductor material
Basf Se
August 17, 2017 - N°20170237005

Provided are a process for preparing a crystalline organic semiconductor material wherein the conditions of crystallization lead to the formation of crystals at the gas liquid interface having advantageous semiconductor properties, the obtained crystalline organic semiconductor material and the use thereof for the production of organic semiconductor devices, in particular organic field effect transistors and organic solar cells.
Semiconductor Devices Patent Pack
Download 1069+ patent application PDFs
Semiconductor Devices Patent Applications
Download 1069+ Semiconductor Devices-related PDFs
For professional research & prior art discovery
inventor
  • 1069+ full patent PDF documents of Semiconductor Devices-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Method of selectively transferring led die to a backplane using height controlled bonding structures
Glo Ab
August 17, 2017 - N°20170236811

Selective transfer of dies including semiconductor devices to a target substrate can be performed employing local laser irradiation. Coining of at least one set of solder material portions can be employed to provide a planar surface-to-surface contact and to facilitate bonding of adjoining pairs of bond structures. Laser irradiation on the solder material portions can be employed to sequentially bond ...
Semiconductor devices and processing methods
Infineon Technologies Ag
August 17, 2017 - N°20170236801

Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.
Tunneling fin type field effect transistor with epitaxial source and drain regions
International Business Machines Corporation
August 17, 2017 - N°20170236755

A method of forming semiconductor devices may begin with forming gate structures over fin structures on sidewalls of at least two mandrels. The mandrels are removed to provide gate structures having a first pitch and gate structure spacers having a second pitch. A first conductivity type epitaxial semiconductor material is formed on the exposed portions of the fin structures. Masking ...
Semiconductor Devices Patent Pack
Download 1069+ patent application PDFs
Semiconductor Devices Patent Applications
Download 1069+ Semiconductor Devices-related PDFs
For professional research & prior art discovery
inventor
  • 1069+ full patent PDF documents of Semiconductor Devices-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon cmos-compatible semiconductor ...
Intel Corporation
August 17, 2017 - N°20170236704

Iii-n semiconductor heterostructures including a raised iii-n semiconductor structures with inclined sidewall facets are described. In embodiments, lateral epitaxial overgrowth favoring semi-polar inclined sidewall facets is employed to bend crystal defects from vertical propagation to horizontal propagation. In embodiments, arbitrarily large merged iii-n semiconductor structures having low defect density surfaces may be overgrown from trenches exposing a (100) surface of a ...
Semiconductor devices and semiconductor systems including the same
Sk Hynix Inc.
August 17, 2017 - N°20170235634

A semiconductor device may be provided. The semiconductor device may include an error correction control circuit and a signal storage circuit. The error correction control circuit may be configured to generates first to (p+1)th write parity signals from first to mth write data signals based on a test mode signal and a read/write signal. Each of the first ...
Thienothiadiazole compounds and related semiconductor devices
Polyera Corporation
August 17, 2017 - N°20170233384

The present invention relates to new semiconducting compounds having at least one optionally substituted thienothiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
Vapor chamber amplifier module
Commscope Technologies Llc
August 10, 2017 - N°20170230011

In one embodiment, an electronic system includes a printed circuit board, one or more packaged semiconductor devices, and a vapor chamber having a top and a bottom and enclosing a sealed cavity that is partially filled with a coolant. The vapor chamber comprises a thermo-conductive and electro-conductive material. The top of the vapor chamber has one or more depressions formed ...
Nitride nanowires and method of producing such
Qunano Ab
August 10, 2017 - N°20170229613

The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, leds and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a cvd based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least ...
Field effect transistors
Globalfoundries Inc.
August 10, 2017 - N°20170229450

A method including providing a semiconductor substrate including a first semiconductor device and a second semiconductor device, the first and second semiconductor devices including dummy spacers, dummy gates, and extension regions; protecting the second semiconductor device with a mask; removing the dummy spacers from the first semiconductor device; and depositing in-situ doped epitaxial regions on top of the extension regions ...
Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices
Taiwan Semiconductor Manufacturing Company, Ltd.
August 10, 2017 - N°20170229421

Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices are disclosed. A method of forming a device includes forming a conductive trace over a first substrate, the conductive trace having first tapering sidewalls, forming a conductive bump over a second substrate, the conductive bump having second tapering sidewalls and a first surface distal the second substrate, and attaching the ...
Semiconductor Devices Patent Pack
Download 1069+ patent application PDFs
Semiconductor Devices Patent Applications
Download 1069+ Semiconductor Devices-related PDFs
For professional research & prior art discovery
inventor
  • 1069+ full patent PDF documents of Semiconductor Devices-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices
Taiwan Semiconductor Manufacturing Company, Ltd.
August 10, 2017 - N°20170229346

Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming a trench in a substrate, the trench being formed within a first side of the substrate and disposed around a portion of the substrate. A first insulating material is formed over the first side ...
Biosensors including surface resonance spectroscopy and semiconductor devices
International Business Machines Corporation
August 10, 2017 - N°20170227556

A sensor including a surface plasmon resonance detector with a reservoir for containing a liquid sample. The sensor further includes a sensing metallic film positioned within the reservoir so that at least a majority of a surface of the sensing metallic film is to be in contact with the liquid sample being housed within the reservoir. The sensory also includes ...
Modified polyimide and curable resin composition
International Business Machines Corporation
August 10, 2017 - N°20170226257

Wherein d is a heat curable or photocurable functional group, r is a divalent or higher polyvalent organic group, and n is an integer of 1 or greater. The modified polyimide undergoes less reduction in transmittance and is protected from discoloration when cured. Due to these advantages, the modified polyimide can provide a highly transparent colorless polyimide film. Particularly, the modified ...
Flexible substrate of bendable display device and manufacturing method thereof
Boe Technology Group Co., Ltd.
August 03, 2017 - N°20170223821

The present disclosure provides a flexible substrate of a bendable display device and a manufacturing method thereof, the flexible substrate includes a bendable base layer, which includes a bending region and a non-bending region; the flexible substrate further includes a fiber reinforced layer, which is provided on a surface of the base layer and has different distribution densities in the ...
Multilayer heterostructures for application in oleds and photovoltaic devices
National University Of Singapore
August 03, 2017 - N°20170222146

This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.
Methods of fabricating semiconductor devices
Taiwan Semiconductor Manufacturing Co., Ltd.
August 03, 2017 - N°20170222019

A semiconductor device and a method for fabricating the same are disclosed. The semiconductor device comprises: a semiconductor substrate with an active area defined by a plurality of isolation features; a gate stack extending across the active area onto portions of the isolation features, wherein the gate stack comprising a gate dielectric layer on the active area and the portions ...
Gate metal structure for compound semiconductor devices
Win Semiconductors Corp.
August 03, 2017 - N°20170222011

An improved gate metal structure for compound semiconductor devices comprises sequentially a compound semiconductor substrate, a schottky barrier layer, an insulating layer and a gate metal. The insulating layer has a gate recess. The surrounding and the bottom of the gate recess are defined by the insulating layer and the schottky barrier layer respectively. The gate metal includes a contact ...
Semiconductor devices, finfet devices and methods of forming the same
Taiwan Semiconductor Manufacturing Co., Ltd.
August 03, 2017 - N°20170222000

Semiconductor devices, finfet devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate, a gate over the substrate and a gate dielectric layer between the gate and the substrate. The gate dielectric layer includes an oxide-inhibiting layer having a dielectric constant greater than about 8 and being in an amorphous state.
Loading