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Semiconductor Devices

Semiconductor Devices-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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NEW Guard rings for cascode gallium nitride devices
Semiconductor Components Industries, Llc
January 18, 2018 - N°20180019332

Implementations of semiconductor devices may include: a plurality of drain fingers and a plurality of source fingers interdigitated with one another; at least one gate; and at gate bus formed to completely surround the plurality of drain fingers and the plurality of source fingers; wherein the gate bus is mechanically and electrically coupled to the at least one gate.
NEW Semiconductor devices having 3d channels, and methods of fabricating semiconductor devices having 3d channels
Samsung Electronics Co., Ltd.
January 18, 2018 - N°20180019321

A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating ...
NEW Semiconductor devices having work function metal films and tuning materials
Samsung Electronics Co ., Ltd .
January 18, 2018 - N°20180019314

A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, ...
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Semiconductor Devices Patent Applications
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NEW Semiconductor devices with depleted heterojunction current blocking regions
Sdphotonics, Llc
January 18, 2018 - N°20180019302

A semiconductor device includes an upper and lower mirror. At least one active region for light generation is between the upper and lower mirror. At least one cavity spacer layer is between at least one of the upper and lower mirror and the active region. The device includes an inner mode confinement region and an outer current blocking region. A ...
NEW Method of manufacturing semiconductor devices having contact plugs overlapping associated bitline structures and contact holes
Samsung Electronics Co., Ltd.
January 18, 2018 - N°20180019246

A semiconductor device can include a plurality of landing pads arranged according to a layout on a substrate, wherein a cross-sectional shape of each of the landing pads has a diamond shape so that opposing interior angles of the diamond shape are equal to one another and adjacent interior angles of the diamond shape are unequal to one another.
NEW Semiconductor devices
Samsung Electronics Co., Ltd.
January 18, 2018 - N°20180019244

A semiconductor device includes a substrate, a bit line structure on the substrate, a first contact structure on a sidewall of the bit line structure, a second contact structure on the bit line structure and spaced apart from the first contact structure across the bit line structure, and an insulation pattern between the bit line structure and the first contact ...
NEW Semiconductor Devices Patent Pack
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Semiconductor Devices Patent Applications
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For professional research & prior art discovery
inventor
  • 1069+ full patent PDF documents of Semiconductor Devices-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
NEW Stretchable semiconductor packages and semiconductor devices including the same
Sk Hynix Inc.
January 18, 2018 - N°20180019188

A semiconductor package includes an extendible molding member, a chip embedded in the molding member to have a warped shape, and connectors disposed in the molding member. First surfaces of the connectors are exposed at a surface of the molding member, and second surfaces of the connectors are coupled to the chip.
NEW Semiconductor devices and semiconductor systems
Sk Hynix Inc.
January 18, 2018 - N°20180018219

A semiconductor system including a first semiconductor device and a second semiconductor device may be provided. The first semiconductor device may be configured to outputs commands and addresses. The first semiconductor device may be configured to output or receive data. The second semiconductor device may be configured to store addresses of output data having an erroneous bit and the output ...
NEW Monitoring aging of power semiconductor devices based on case temperature
Nutech Ventures
January 18, 2018 - N°20180017613

The aging of an electronic component in an electronic power converter can be monitored based on two or more case temperature measurements. A power electronic device is enclosed in a package having a baseplate, in which the power electronic device generates heat during operation and the baseplate transfers heat to a heat dissipating device or a cooling device. Sensors measure ...
Semiconductor devices and methods for forming semiconductor devices
Infineon Technologies Ag
January 11, 2018 - N°20180013013

A semiconductor device includes an anode doping region of a diode structure arranged in a semiconductor substrate. The anode doping region has a first conductivity type. The semiconductor device further includes a second conductivity type contact doping region having a second conductivity type. The second conductivity type contact doping region is arranged at a surface of the semiconductor substrate and ...
Semiconductor devices and method of making the same
Semiconductor Components Industries, Llc
January 11, 2018 - N°20180012995

In one embodiment, the semiconductor devices relate to using one or more super-junction trenches for termination.
Semiconductor devices
Samsung Electroncis Co., Ltd.
January 11, 2018 - N°20180012970

The semiconductor device including a device isolation layer disposed in a substrate and defining an active region, a first conductive pattern on the active region, an impurity region in the active region on a side of the first conductive pattern, a second conductive pattern on the active region between the impurity region and the first conductive pattern, a first spacer ...
Semiconductor devices
Samsung Electronics Co., Ltd.
January 11, 2018 - N°20180012967

A semiconductor device may include an active fin, an element isolation film on a lower portion of the active fin and a gate structure crossing over the active fin. The gate structure may include first and second sides. The device may also include a source region and a drift region adjacent the first and second sides of the gate structure, ...
Semiconductor Devices Patent Pack
Download 1069+ patent application PDFs
Semiconductor Devices Patent Applications
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For professional research & prior art discovery
inventor
  • 1069+ full patent PDF documents of Semiconductor Devices-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Capacitor structures, decoupling structures and semiconductor devices including the same
Samsung Electronics Co., Ltd.
January 11, 2018 - N°20180012955

Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive ...
Semiconductor module
Kabushiki Kaisha Toyota Jidoshokki
January 11, 2018 - N°20180012833

A semiconductor module includes a wiring substrate and two semiconductor devices mounted on the wiring substrate. The semiconductor module includes a housing having a rectangular frame body including four side walls. The housing includes a beam that bridges first side walls. A bus bar includes two end portions, upright portions each extending from one of the end portions in the ...
Semiconductor devices, methods of manufacture thereof, and semiconductor device packages
Taiwan Semiconductor Manufacturing Company, Ltd.
January 11, 2018 - N°20180012830

Semiconductor devices, methods of manufacture thereof, and semiconductor device packages are disclosed. In one embodiment, a semiconductor device includes an insulating material layer having openings on a surface of a substrate. One or more insertion bumps are disposed over the insulating material layer. The semiconductor device includes signal bumps having portions that are not disposed over the insulating material layer.
Semiconductor devices, via structures and methods for forming the same
Vanguard International Semiconductor Corporation
January 11, 2018 - N°20180012823

A semiconductor device includes a via structure penetrating through a substrate, a top metal layer and an electronic component over the via structure, and a bottom metal layer and another electronic component below the via structure. The via structure includes a through hole penetrating from a first surface to an opposite second surface of a substrate, a filling insulating layer ...
Semiconductor devices and methods of formation thereof
Infineon Technologies Ag
January 11, 2018 - N°20180012819

In one embodiment, a semiconductor device includes a first contact pad disposed at a top side of a workpiece, a second contact pad disposed at the top side of the workpiece. An isolation region is disposed between the first contact pad and the second contact pad. A metal strip is disposed at least partially within the isolation region. The metal ...
Semiconductor device and fabrication method thereof
Semiconductor Manufacturing International (beijing) Corporation
January 11, 2018 - N°20180012811

Semiconductor devices and fabrication methods thereof are provided. An exemplary fabrication method includes forming an interlayer dielectric layer on a base substrate; forming a plurality of first openings and second openings in the interlayer dielectric layer, one first opening connecting to a second opening, the one first opening being between the second opening and the base substrate; forming a high-k ...
Method for realizing ultra-thin sensors and electronics with enhanced fragililty
The Charles Stark Draper Laboratory, Inc.
January 11, 2018 - N°20180012786

A method of fabricating ultra-thin semiconductor devices includes forming an array of semiconductor dielets mechanically suspended on a frame with at least one tether connecting each semiconductor dielet of the array of semiconductor dielets to the frame.
Methods of manufacturing semiconductor devices
Samsung Electronics Co., Ltd.
January 11, 2018 - N°20180012775

In a method of manufacturing a semiconductor memory device, a plurality of first conductive structures including a first conductive pattern and a hard mask are sequentially stacked on a substrate. A plurality of preliminary spacer structures including first spacers, sacrificial spacers and second spacers are sequentially stacked on sidewalls of the conductive structures. A plurality of pad structures are formed ...
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