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Semiconductor Devices patents

      

This page is updated frequently with new Semiconductor Devices-related patent applications.




 Semiconductor devices including a stressor in a recess and methods of forming the same patent thumbnailSemiconductor devices including a stressor in a recess and methods of forming the same
semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region.
Samsung Electronics Co., Ltd.


 Interlayer dielectric film in semiconductor devices patent thumbnailInterlayer dielectric film in semiconductor devices
A method of forming a semiconductor device includes depositing a flowable dielectric layer on a substrate and annealing the flowable dielectric layer. The method further includes performing a high temperature (ht) doping process on the flowable dielectric layer.
Taiwan Semiconductor Manufacturing Company, Ltd.


 Semiconductor devices, power semiconductor devices, and methods for forming a semiconductor device patent thumbnailSemiconductor devices, power semiconductor devices, and methods for forming a semiconductor device
A semiconductor device includes a drift region of a device structure arranged in a semiconductor layer. The drift region includes at least one first drift region portion and at least one second drift region portion.
Infineon Technologies Ag


 Semiconductor devices and methods of manufacturing the same patent thumbnailSemiconductor devices and methods of manufacturing the same
A semiconductor device includes a gate structure on a substrate, a source/drain layer on a portion of the substrate adjacent the gate structure, a first contact plug contacting an upper surface of the source/drain layer, and a second contact plug contacting upper surfaces of the gate structure and the first contact plug. A bottom surface of the second contact plug has a first portion not contacting the upper surface of the first contact plug, and the first portion is higher than the upper surface of the gate structure..
Samsung Electronics Co., Ltd.


 Semiconductor devices and fabricating methods thereof patent thumbnailSemiconductor devices and fabricating methods thereof
Provided are semiconductor devices and fabricating methods thereof. The semiconductor device includes a field insulating layer formed in a substrate, an interlayer dielectric layer formed on the field insulating layer and including a trench exposing at least a portion of the field insulating layer, a deposition insulating layer formed in the trench to be disposed on the field insulating layer, a gate insulating layer formed the trench to be disposed on the deposition insulating layer, and a metal gate formed the trench on the gate insulating layer..
Samsung Electronics Co., Ltd.


 Reduction of defect induced leakage in iii-v semiconductor devices patent thumbnailReduction of defect induced leakage in iii-v semiconductor devices
A semiconductor device includes a semiconductor substrate and a p-doped layer formed on the substrate having a dislocation density exceeding 10 cm−2. An n-type layer is formed on or in the p-doped layer.
International Business Machines Corporation


 Three-dimensional semiconductor devices patent thumbnailThree-dimensional semiconductor devices
A three-dimensional (3d) semiconductor device includes a plurality of gate electrodes stacked on a substrate in a direction normal to a top surface of the substrate, a channel structure passing through the gate electrodes and connected to the substrate, and a void disposed in the substrate and positioned below the channel structure.. .

 Deep trench isolation structures and systems and methods including the same patent thumbnailDeep trench isolation structures and systems and methods including the same
Deep trench isolation structures and systems and methods including the same are disclosed herein. The systems include a semiconductor device.
Nxp Usa, Inc.


 Three-dimensional semiconductor devices patent thumbnailThree-dimensional semiconductor devices
A three-dimensional semiconductor device includes an upper structure on a lower structure, the upper structure including conductive patterns, a semiconductor pattern connected to the lower structure through the upper structure, and an insulating spacer between the semiconductor pattern and the upper structure, a bottom surface of the insulating spacer being positioned at a vertical level equivalent to or higher than an uppermost surface of the lower structure.. .

 Semiconductor devices including insulating materials in fins patent thumbnailSemiconductor devices including insulating materials in fins
semiconductor devices are provided. A semiconductor device includes a first insulating material in a first fin.
Samsung Electronics Co., Ltd.


Semiconductor devices having hybrid stacking structures and methods of fabricating the same

A semiconductor device having a chip stack and an interconnection terminal is provided. The chip stack includes a first semiconductor chip, a second semiconductor chip and a third semiconductor chip stacked on each other.

Method for manufacturing semiconductor apparatus and semiconductor apparatus

A method for manufacturing a semiconductor apparatus, including an encapsulating step of collectively encapsulating a device mounting surface of a substrate having semiconductor devices mounted thereon with a base-attached encapsulant having a base and a thermosetting resin layer formed on one surface of the base, the semiconductor devices being mounted by flip chip bonding, the encapsulating step including a unifying stage of unifying the substrate having the semiconductor devices mounted thereon and the base-attached encapsulant under a reduced pressure condition with a vacuum of 10 kpa or less, and a pressing stage of pressing the unified substrate with a pressure of 0.2 mpa or more.. .
Shin-etsu Chemical Co., Ltd.

Selective bottom-up metal feature filling for interconnects

A method for selective bottom-up filling of recessed features with a low resistivity metal for semiconductor devices is described in several embodiments. The method includes providing a substrate containing a patterned dielectric layer having a recessed feature with dielectric layer surfaces and a metal-containing surface on a bottom of the recessed feature, reacting the dielectric layer surfaces with a reactant gas containing a hydrophobic functional group to form hydrophobic dielectric layer surfaces, and at least substantially filling the recessed feature with a metal in a bottom-up gas phase deposition process that hinders deposition of the metal on the hydrophobic dielectric layer surfaces.
Tokyo Electron Limited

Dielectric with air gaps for use in semiconductor devices

Aspects of the invention are directed to a method for forming a semiconductor device. A dielectric layer is formed on a semiconductor substrate.
International Business Machines Corporation

Methods for forming semiconductor devices

A method for forming a semiconductor device includes etching, in a masked etching process, through a layer stack located on a surface of a semiconductor substrate to expose the semiconductor substrate at unmasked regions of the layer stack. The method further includes etching, in a selective etching process, at least a first layer of the layer stack located adjacently to the semiconductor substrate.
Infineon Technologies Austria Ag

Method of fabricating semiconductor device

Methods for fabricating semiconductor devices include forming a fin-type pattern protruding on a substrate, forming a gate electrode intersecting the fin-type pattern, forming a first recess adjacent to the gate electrode and within the fin-type pattern by using dry etching, forming a second recess by treating a surface of the first recess with a surface treatment process including a deposit process and an etch process, and forming an epitaxial pattern in the second recess.. .
Samsung Electronics Co., Ltd.

Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions

A semiconductor device includes a memory cell array, which further includes an array of first magnetic memory cells and an array of second magnetic memory cells. Each of the first magnetic memory cells includes a first magnetic tunnel junction structure having a reversible resistance state, and each of the second magnetic memory cells includes a second magnetic tunnel junction structure having a one-time programmable (otp) resistance state..

Test device and test system having the same

A test device for testing a plurality of semiconductor devices, each of which includes a plurality of functional blocks and a plurality of test pads coupled to the functional blocks. The test device includes a test header including a plurality of test channels, a plurality of test sites on which the semiconductor devices are installed, and a test control device.
Samsung Electronics Co., Ltd.

Method for forming monocrystalline silicon ingot and wafers

The present invention relates to a method for forming monocrystalline silicon ingot and wafers. At first, silica is doped with deuterium atoms which is retained in interstices therein.
Zing Semiconductor Corporation

Method for forming monocrystalline silicon ingot and wafer

The present invention relates to a method for forming monocrystalline silicon ingot and wafer. When forming a monocrystalline silicon ingot, melted silicon is introduced with a gas comprising deuterium atoms to receive the deuterium atoms at interstice sites, and thus the oxygen, carbon and other impurity contained therein are decreased.
Zing Semiconductor Corporation

Slurry compounds and methods of fabricating semiconductor devices using the same

Provided are slurry compounds for polishing an soh organic layer and methods of fabricating a semiconductor device using the same. The slurry compound may include a polishing particle, an oxidizing agent including at least one selected from the group consisting of a nitrate, a sulfate, a chlorate, a perchlorate, a chlorine, and a peroxide, and a polishing accelerator..
Samsung Electronics Co., Ltd.

Heater design for mems chamber pressure control

The present disclosure relates to a mems package having a heating element configured to adjust a pressure within a hermetically sealed chamber by inducing out-gassing of into the chamber, and an associated method. In some embodiments, the mems package has a cmos substrate having one or more semiconductor devices arranged within a semiconductor body.
Taiwan Semiconductor Manufacturing Co., Ltd.

Inter-poly connection for parasitic capacitor and die size improvement

The present disclosure relates to micro-electromechanical system (mems) package that uses polysilicon inter-tier connections to provide for a low parasitic capacitance in mem device signals, and a method of formation. In some embodiments, the mems package has a cmos substrate with one or more semiconductor devices arranged within a semiconductor body.
Taiwan Semiconductor Manufacturing Co., Ltd.

Semiconductor support frame and storage device having the same

A substrate support frame includes a body having an upper surface for supporting a first module substrate and a lower surface for supporting a second module substrate, and including a plurality of extending portions that define a cavity for receiving semiconductor devices mounted on first and second module substrates, a curved portion protruding outwardly from a first one of the extending portions of the body corresponding to a position of a flexible substrate that electrically connects the first and second module substrates to each other, the curved portion having a curved sectional shape protruding toward the flexible substrate, and a fastening hole penetrating through the first one of the extending portions of the body and configured to receive a screw to couple the body to at least one of the first and second module substrates.. .
Samsung Electronics Co., Ltd.

Method for producing optical semiconductor device and optical semiconductor device

A method is provided for making optical semiconductor devices collectively. Led chips are arranged on a material substrate, and the substrate is sandwiched by a common mold and a first cooperating mold formed with a cavity.
Rohm Co., Ltd.

Apparatus and methods for forming a modulation doped non-planar transistor

Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed, which may include forming a modulation doped heterostructure, comprising forming an active portion having a first bandgap and forming a delta doped portion having a second bandgap..
Intel Corporation

Nitride semiconductor device with asymmetric electrode tips

Nitride semiconductor devices having interdigitated array source and drain electrodes arranged like crossed fingers are described. The electric fields extended at the tips of the array electrodes are relaxed.
Sanken Electric Co., Ltd.

Co-fabricated bulk devices and semiconductor-on-insulator devices

Bulk semiconductor devices are co-fabricated on a bulk semiconductor substrate with soi devices. The soi initially covers the entire substrate and is then removed from the bulk device region.
Globalfoundries Inc.

Methods for cell boundary encroachment and semiconductor devices implementing the same

A semiconductor device is disclosed to include a plurality of cells. Each of the cells has a respective outer cell boundary defined to circumscribe the cell in an orthogonal manner.
Tela Innovations, Inc.

Vertical semiconductor devices and methods of manufacturing the same

In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate.

Semiconductor devices and methods for manufacturing the same

A method for manufacturing a semiconductor device includes forming first and second lower structures including selection elements on first and second chip regions of a substrate, respectively, forming first and second mold layers on the first and second lower structures, respectively, forming first and second support layers on the first and second mold layers, respectively, patterning the first support layer and the first mold layer to form first holes exposing the first lower structure, forming first lower electrodes in the first holes, forming a support pattern including at least one opening by selectively patterning the first support layer while leaving the second support layer, and removing the first mold layer through the opening. A top surface of the support pattern is disposed at a substantially same level as a top surface of the second support layer..
Samsung Electronics Co., Ltd.

Semiconductor devices and inverter having the same

Disclosed are cmos device and cmos inverter. The cmos device includes a substrate having active lines extending in a first direction and defined by a device isolation layer, the substrate being divided into an nmos area, a pmos area and a boundary area interposed between the nmops and the pmos areas and having the device isolation layer without the active line, a gate line extending in a second direction across the active lines and having a first gate structure on the active line in the first area, a second gate structure on the active line in the second and a third gate structure on the device isolation layer in the third area.
Samsung Electronics Co., Ltd.

Apparatus and methods for micro-transfer-printing

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed.
X-celeprint Limited

Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices

Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices are disclosed. In some embodiments, a cooling device for a semiconductor device includes a reservoir having a first plate and a second plate coupled to the first plate.
Taiwan Semiconductor Manufacturing Company, Ltd.

Methods for formation of low-k aluminum-containing etch stop films

Dielectric alo, aloc, alon and alocn films characterized by a dielectric constant (k) of less than about 10 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers and/or diffusion barriers. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ulk dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) in an iald process chamber and the aluminum-containing compound is allowed to adsorb onto the surface of the substrate.
Lam Research Corporation

Method for packaging an integrated circuit device with stress buffer

A method of fabricating a plurality of semiconductor devices includes attaching a plurality of integrated circuit (ic) die to a substrate including forming electric connections between contacts on the ic die and contacts on the substrate. After the ic die is attached to the substrate, a first encapsulating material is placed over stress-sensitive areas of the ic die.
Freescale Semiconductor, Inc.

Methods of forming patterns of a semiconductor devices

A method of forming fine patterns of semiconductor devices is disclosed. The method comprises forming a hard mask layer on an etch target, which includes first and second regions.
Samsung Electronics Co., Ltd.

Semiconductor devices

A semiconductor device may be provided. The semiconductor device may include a test data interface, a first data interface, and a second data interface.
Sk Hynix Inc.

Semiconductor devices and semiconductor systems including the same

A semiconductor system includes a first semiconductor device and a second semiconductor device. The first semiconductor device outputs a power supply voltage and first data.
Sk Hynix Inc.

Semiconductor device simulation

In one embodiment, a method for simulating semiconductor devices includes the steps: running ensemble monte carlo (emc) simulations of a plurality of semiconductor devices having a first plurality of configurations in a design of experiment (doe) space to produce emc results; extracting mobility parameters across the doe space from the emc results; constructing a response-surface mobility model using the extracted mobility parameters; and using the response-surface mobility model to run a drift-diffusion simulation of a semiconductor device with a different configuration from the first plurality of configurations.. .
Gold Standard Simulations Ltd.

Semiconductor devices, finfet devices and methods of forming the same

semiconductor devices, finfet devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate and a gate over the substrate.
Taiwan Semiconductor Manufacturing Co., Ltd.

Field effect transistors and methods of forming same

semiconductor devices and methods of forming the same are provided. A first source/drain layer is formed over a substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.

Methods of manufacturing semiconductor devices

Methods of manufacturing a semiconductor device are provided. Methods may include forming first to third regions having densities different from one another on a substrate, covering the first to third regions to form an upper interlayer insulating film including a low step portion and a high step portion higher than the low step portion, forming an organic film on the upper interlayer insulating film, removing a part of the organic film to expose an upper surface of the high step portion, removing the high step portion so that an upper surface of the high step portion is disposed on at least the same line as the organic film disposed on the upper surface of the lower step portion, removing the remaining part of the organic film to expose the upper surface of the upper interlayer insulating film and flattening the upper surface of the upper interlayer insulating film..
Samsung Electronics Co., Ltd.

Semiconductor device attached to an exposed pad

The present disclosure provides for embodiments of packaged semiconductor devices. In one embodiment, a packaged semiconductor device for a die includes an exposed structure.
Nxp Usa, Inc.

Contacts for semiconductor devices and methods of forming thereof

A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate.

Distributed on-chip decoupling apparatus and method using package interconnect

An integrated circuit device is disclosed. The integrated circuit device includes a semiconductor die fabricated by a front-end semiconductor process and having oppositely disposed planar surfaces.
Rambus Inc.

Protecting partially-processed products during transport

Methods, systems and devices for protecting partially processed electronic parts, are disclosed. In some embodiments, a method for protecting electronic parts includes applying a first protective sheet on one or more partially-processed semiconductor devices, removing the first protective sheet, and performing a semiconductor-processing operation on the one or more partially-processed semiconductor devices.
Skyworks Solutions, Inc.

Method of modifying epitaxial growth shape on source drain area of transistor

Methods for forming semiconductor devices, such as finfets, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets.
Applied Materials, Inc.

Semiconductor devices

A first data input circuit receives test data from a first pad to generate first input control data for generating cell input data stored in a memory cell array during a first operation period. A first data output circuit receives first output control data generated from cell output data outputted from the memory cell array to output the first output control data to an internal node coupled to a second pad during a second operation period..
Sk Hynix Inc.

Methods of forming conductive elements of semiconductor devices and of forming memory cells

Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a portion of at least one opening and performing a polishing process to fill the at least one opening with at least one of the first and second conductive materials.
Micron Technology, Inc.

Lead frame for mounting led elements, lead frame with resin, manufacturing semiconductor devices, and lead frame for mounting semiconductor elements

A lead frame for mounting led elements includes a frame body region and a large number of package regions arranged in multiple rows and columns in the frame body region. The package regions each include a die pad on which an led element is to be mounted and a lead section adjacent to the die pad, the package regions being further constructed to be interconnected via a dicing region.
Dai Nippon Printing Co., Ltd.

Conductive strip based mask for metallization of semiconductor devices

Methods of manufacturing a semiconductor device, and resulting semiconductor device are described. In an example, the method for manufacturing a semiconductor device include forming a semiconductor region and forming a metal seed region over the semiconductor region.

Semiconductor devices and methods of forming the same

According to embodiments of the inventive concept, a gate electrode is formed on a substrate, and a first spacer, a second spacer, and a third spacer are sequentially formed on a sidewall of the gate electrode. The substrate is etched to form a recess region.
Samsung Electronics Co., Ltd.

Semiconductor devices including source/drain regions having multiple epitaxial patterns

A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern.
Samsung Electronics Co., Ltd.

Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices

semiconductor devices include a strain-inducing layer capable of applying a strain to a channel region of a transistor included in a miniaturized electronic device, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate having a channel region; a pair of source/drain regions provided on the substrate and arranged on both sides of the channel region in a first direction; and a gate structure provided on the channel region and comprising a gate electrode pattern extending in a second direction that is different from the first direction, a gate dielectric layer disposed between the channel region and the gate electrode pattern, and a gate spacer covering respective lateral surfaces of the gate electrode pattern and the gate dielectric layer.
Samsung Electronics Co., Ltd.

Water and ion barrier for iii-v semiconductor devices

A semiconductor device includes an iii-v semiconductor body, a device formed in the iii-v semiconductor body, one or more metal layers above the iii-v semiconductor body, an interlayer dielectric adjacent each metal layer, a plurality of vias electrically connecting each metal layer to the device formed in the iii-v semiconductor body, and a barrier disposed below the uppermost metal layer and in or above the lowermost interlayer dielectric. The barrier is configured to prevent water, water ions, sodium ions and potassium ions from diffusing into the interlayer dielectric or portion of the interlayer dielectric immediately below the barrier.
Infineon Technologies Austria Ag

Iii-nitride semiconductors with recess regions and methods of manufacture

A multi-layer semiconductor structure is disclosed for use in iii-nitride semiconductor devices, including a channel layer comprising a first iii-nitride material, a barrier layer comprising a second iii-nitride material, a pair of ohmic electrodes disposed in ohmic recesses etched into the barrier layer, a gate electrode disposed in a gate recess etched into the barrier layer, and a filler element. The gate electrode is stepped to form a bottom stem and at least one bottom step within the gate recess.
Cambridge Electronics, Inc.

Method of manufacturing for memory transistor with multiple charge storing layers and a high work function gate electrode

A semiconductor devices including non-volatile memories and methods of fabricating the same to improve performance thereof are provided. Generally, the device includes a memory transistor comprising a polysilicon channel region electrically connecting a source region and a drain region formed in a substrate, an oxide-nitride-nitride-oxide (onno) stack disposed above the channel region, and a high work function gate electrode formed over a surface of the onno stack.
Cypress Semiconductor Corporation

Composite wafer semiconductor devices using offset via arrangements and methods of fabricating the same

A device includes a first integrated circuit substrate including a plurality of first metal layers interconnected by first vias and a second integrated circuit substrate on the first integrated circuit substrate and including second metal layers interconnected by second vias. An insulation layer is disposed between the first and second substrates and a connection region is disposed in the insulation layer and electrically connects a first one of the first metal layers to a first one of the second metal layers.
Samsung Electronics Co., Ltd.

Semiconductor devices including gate insulation layers on channel materials and methods of forming the same

semiconductor devices are provided. A semiconductor device includes a stack of alternating insulation layers and gate electrodes.

Temperature compensation of fabricated semiconductors

semiconductor devices and methods are described wherein temperature dependence of leakage current in at least one pathway of a device is compensated by a resistor in the device. Control of temperature dependent leakage current is particularly useful for silicon nitride devices and for circuits such as cascode circuits.
Sanken Electric Co., Ltd.

Semiconductor package and manufacturing method therefor

Disclosed herein is a semiconductor package that includes: a package substrate having a main surface; a plurality of semiconductor devices mounted on the main surface of the package substrate; a mold member formed on the main surface of the package substrate so as to cover the semiconductor devices, the mold member having an upper surface substantially parallel to the main surface of the package substrate; and an electromagnetic wave shield formed on the upper surface of the mold member. The mold member comprises a mold resin and metal magnetic particles dispersed in the mold resin.
Tdk Corporation

Interconnect structures for assembly of multi-layer semiconductor devices

A multi-layer semiconductor device includes a first semiconductor structure having first and second opposing surfaces, the second surface of the first semiconductor structure having at least a first semiconductor package pitch. The multi-layer semiconductor device also includes a second semiconductor structure having first and second opposing surfaces, the first surface of the second semiconductor structure having a second semiconductor package pitch.
Massachusetts Institute Of Technology

Semiconductor devices and methods of fabricating the same

semiconductor devices are provided. A semiconductor device includes gaps between conductive patterns.
Samsung Electronics Co., Ltd.

Micro heat transfer arrays, micro cold plates, and thermal management systems for cooling semiconductor devices, and methods for using and making such arrays, plates, and systems

Embodiments of the present invention are directed to heat transfer arrays, cold plates including heat transfer arrays along with inlets and outlets, and thermal management systems including cold-plates, pumps and heat exchangers. These devices and systems may be used to provide cooling of semiconductor devices and particularly such devices that produce high heat concentrations.
Microfabrica Inc.

Methods of fabricating semiconductor devices including complementary metal oxide semiconductor transistors

Methods of fabricating semiconductor device are provided including forming first and second material layers for a first transistor using epitaxial growth processes. A recess region is formed by partially etching the first and second material layers.
Samsung Electronics Co., Ltd.

Adjacent strained <100> nfet fins and <110> pfet fins

The present invention relates generally to semiconductor devices, and more particularly, to a structure and method of forming strained <100> n-channel field effect transistor (nfet) fins and adjacent strained <110> p-channel field effect transistor (pfet) fins on the same substrate. A <110> crystalline oxide layer may be either bonded or epitaxially grown on a substrate layer.
International Business Machines Corporation

Semiconductor device and forming the same

semiconductor devices and a method for forming the same are provided. In various embodiments, a method for forming a semiconductor device includes receiving a semiconductor substrate including a channel.
Taiwan Semiconductor Manufacturing Co., Ltd.



Semiconductor Devices topics:
  • Semiconductor
  • Semiconductor Device
  • Semiconductor Devices
  • Transistors
  • Photovoltaic Cell
  • Stickiness
  • Etching Process
  • Encapsulation
  • Transparency
  • Semiconductor Substrate
  • Electrochemical Deposition
  • Distributed
  • Metallic Compound
  • Calibration
  • Connected Devices


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