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Semiconductor Device

Semiconductor Device-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Image reading apparatus and semiconductor device
Seiko Epson Corporation
June 15, 2017 - N°20170171478

An image reading apparatus for reading an image includes a light receiving element that receives light from the image so as to perform photoelectric conversion, an amplifier which is electrically connected to the light receiving element, and amplifies a signal generated by photoelectric conversion, a switch element which is electrically connected to both ends of the amplifier so as to ...
Image reading apparatus and semiconductor device
Seiko Epson Corporation
June 15, 2017 - N°20170171419

An image reading apparatus includes a light receiving element configured to receive light from an image to perform photoelectric conversion, an amplification unit configured to amplify a signal generated by the photoelectric conversion, a switch element electrically connected to first and second ends of the amplification unit to be in parallel with the amplification unit, and a capacitor. The capacitor ...
Semiconductor device
Semiconductor Energy Laboratory Co., Ltd.
June 15, 2017 - N°20170170828

It is an object to provide a semiconductor device in which power consumption can be reduced. It is another object to provide a highly reliable semiconductor device using a programming cell, such as a programmable logic device (pld). In accordance with a change in a configuration of connections between basic blocks, power supply voltage furnishing to the basic blocks is ...
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Semiconductor Device Patent Applications
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Semiconductor device and electric power control apparatus
Renesas Electronics Corporation
June 15, 2017 - N°20170170819

A driver ic includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense mos that is arranged between a floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault ...
Semiconductor device for near-field communication
Samsung Electronics Co., Ltd.
June 15, 2017 - N°20170170691

A semiconductor device is provided. The semiconductor device includes a first coil section that receives a first clock signal from a reader, a power generator that is electrically connected to the first coil section in accordance with a switching operation of a switch, a first near-field communication (nfc) chip that is electrically connected to the power generator and receives electric ...
Semiconductor device
Fuji Electric Co., Ltd.
June 15, 2017 - N°20170170647

A first sense resistor is connected between a fourth terminal of a power source potential of a high-potential region and a first terminal of a ground potential. A second sense resistor is connected between a third terminal of a reference potential of the high-potential region and the first terminal. A comparator is disposed in a low-potential region and uses the ...
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Semiconductor Device Patent Applications
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  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Semiconductor device, display device, display apparatus, and system
Ricoh Company, Ltd.
June 15, 2017 - N°20170170333

A semiconductor device includes a base; a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode through which an electric current is generated according to the gate voltage being applied to the gate electrode; a semiconductor layer made of an oxide semiconductor; and a gate insulating layer inserted between the gate electrode and ...
Semiconductor device and display device
Semiconductor Energy Laboratory Co., Ltd.
June 15, 2017 - N°20170170332

In a transistor including an oxide semiconductor film, field-effect mobility and reliability are improved. A semiconductor device includes a gate electrode, an insulating film over the gate electrode, an oxide semiconductor film over the insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor ...
Semiconductor device
Samsung Electronics Co., Ltd.
June 15, 2017 - N°20170170331

A semiconductor device includes a first transistor, a second transistor and a third transistor provided on a substrate, the first to third transistors respectively including source and drain regions spaced apart from each other, a gate structure extending in a first direction on the substrate and interposed between the source and drain regions, and a channel region connecting the source ...
Semiconductor device and method for manufacturing the same
Semiconductor Energy Laboratory Co., Ltd.
June 15, 2017 - N°20170170328

As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an ic chip including a driver circuit for driving of the gate and signal lines by ...
Semiconductor device
Semiconductor Energy Laboratory Co., Ltd.
June 15, 2017 - N°20170170327

An object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. In a transistor including an oxide semiconductor film, the oxide semiconductor film is subjected to dehydration or dehydrogenation performed by heat treatment. In addition, as a gate insulating film in contact with the oxide semiconductor film, an insulating film containing ...
Transistor, circuit, semiconductor device, display device, and electronic device
Semiconductor Energy Laboratory Co., Ltd.
June 15, 2017 - N°20170170326

A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element m, ...
Oxide semiconductor film, semiconductor device, and display device
Semiconductor Energy Laboratory Co., Ltd.
June 15, 2017 - N°20170170325

An oxide semiconductor film contains in, m (m is al, ga, y, or sn), and zn and includes a region with a film density higher than or equal to 6. 3 g/cm3 and lower than 6. 5 g/cm3. Alternatively, the oxide semiconductor film contains in, m (m is al, ga, y, or sn), and zn and includes a region with etching at ...
Semiconductor Device Patent Pack
Download 7936+ patent application PDFs
Semiconductor Device Patent Applications
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inventor
  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
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  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Method of forming a semiconductor device structure and semiconductor device structure
Globalfoundries Inc.
June 15, 2017 - N°20170170317

A method of forming a semiconductor device structure is disclosed including providing a first active region and a second active region in an upper surface portion of a substrate, the first and second active regions being laterally separated by at least one isolation structure, forming a first gate structure comprising a first gate dielectric and a first gate electrode material ...
Method and structure of improving contact resistance for passive and long channel devices
International Business Machines Corporation
June 15, 2017 - N°20170170315

A semiconductor device includes a gate arranged on a substrate; a source/drain formed on the substrate adjacent to the gate; a source/drain contact extending from the source/drain and through an interlayer dielectric (ild) over the source/drain, a portion of the source/drain positioned adjacent to the source/drain contact; and a silicide positioned along a sidewall ...
High voltage ldmos transistor and methods for manufacturing the same
Taiwan Semiconductor Manufacturing Company Ltd.
June 15, 2017 - N°20170170311

A semiconductor device is provided. The semiconductor device comprises a substrate, a gate, a first doped region and a second doped region. The gate is over the substrate. The first doped region and the second doped region are in the substrate. The first doped region and the second doped region are of a same conductivity type and separated by the ...
Semiconductor device and manufacturing method of the semiconductor device
Hyundai Motor Company
June 15, 2017 - N°20170170310

A semiconductor device includes an n− type layer disposed in a first surface of an n+ type silicon carbide substrate, a first trench and a second trench disposed in the n− type layer and spaced apart from each other, a p type region surrounding a lateral surface and a corner of the first trench, an n+ type region ...
Semiconductor device and method of manufacturing same
Taiwan Semiconductor Manufacturing Company, Ltd.
June 15, 2017 - N°20170170308

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes: providing a workpiece having a recess and a dielectric layer lining the recess; forming a conductive structure within the recess, wherein the conductive structure partially fills the recess; and recessing the dielectric layer, wherein, after the recessing, a top surface ...
Semiconductor device and manufacturing method thereof
Hyundai Motor Company
June 15, 2017 - N°20170170307

A semiconductor device is provided. The device includes an n− type layer with a trench disposed in a first surface of an n+ type silicon carbide substrate. An n+ type region and a first p type region are disposed at the n− type layer and at a lateral surface of the trench. A plurality of second p type ...
Semiconductor device and method of manufacturing same
Renesas Electronics Corporation
June 15, 2017 - N°20170170306

In a semiconductor device using a nitride semiconductor, a misfet is prevented from having deteriorated controllability which will otherwise occur when a tungsten film, which configures a gate electrode of the misfet, has a tensile stress. A gate electrode of a misfet having an algn/gan heterojunction is formed from a tungsten film having grains with a relatively small grain ...
Semiconductor device and method for fabricating the same
Samsung Electronics Co., Ltd.
June 15, 2017 - N°20170170305

A semiconductor may include a semiconductor substrate including a first region and a second region disposed at opposite sides of the first region, a first trench formed in the first region, a buffer layer filling a portion of the first trench, a first semiconductor layer formed on the buffer layer, a second semiconductor layer forming a hetero-junction with the first ...
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