Images List Premium Download Classic

Semiconductor Device

Semiconductor Device-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


loading
Periodic signal generation circuit and semiconductor system including the same
Sk Hynix Inc.
October 12, 2017 - N°20170294899

A semiconductor system may include a first semiconductor device configured to output a command and receive data. The semiconductor system may include a second semiconductor device configured to generate a period signal, the period signals periodically toggled in response to the command, output the data in response to the period signal, and discharge the charges of an internal node if ...
Semiconductor device
Mitsubishi Electric Corporation
October 12, 2017 - N°20170294887

A semiconductor device includes: a semiconductor substrate whose contour is a pentagon; a front-stage amplifier formed relatively near a vertex of the pentagon of the semiconductor substrate; and a rear-stage amplifier formed relatively near a side opposed to the vertex of the semiconductor substrate and amplifying an output from the front-stage amplifier.
Semiconductor device, control method of semiconductor device, and feeding system
Mitsubishi Electric Corporation
October 12, 2017 - N°20170294832

Provided is a semiconductor device including: a first power source circuit that generates an output voltage supplied to a usb device coupled to a usb connector; an abnormality detection circuit that determines the state of a supply route of the output voltage generated by the first power source circuit; and a control circuit that controls supply of the output voltage ...
Semiconductor Device Patent Pack
Download 7936+ patent application PDFs
Semiconductor Device Patent Applications
Download 7936+ Semiconductor Device-related PDFs
For professional research & prior art discovery
inventor
  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Semiconductor device including an etching stop layer and method of manufacturing the same
Sk Hynix Inc.
October 12, 2017 - N°20170294581

A method of semiconductor device fabrication that includes sequentially forming an interfacial conductive layer and an etch stop layer on a resistive memory layer; forming a main conductive layer on the etch stop layer; exposing a portion of the etch stop layer by patterning the main conductive layer; exposing a portion of the interfacial conductive layer by patterning the portion ...
Method of forming a bottom electrode of a magnetoresistive random access memory cell
Taiwan Semiconductor Manufacturing Co., Ltd.
October 12, 2017 - N°20170294576

A method of fabricating a semiconductor device is disclosed. The method includes forming an opening with a tapered profile in a first material layer. An upper width of the opening is greater than a bottom width of opening. The method also includes forming a second material layer in the opening and forming a hard mask to cover a portion of ...
Light element doped low magnetic moment material spin torque transfer mram
Samsung Electronics Co., Ltd.
October 12, 2017 - N°20170294575

Techniques relate to forming a semiconductor device. A magnetic pinned layer is formed adjacent to a tunnel barrier layer. A magnetic free layer is formed adjacent to the tunnel barrier layer, such that the tunnel barrier layer is sandwiched between the magnetic pinned layer and the magnetic free layer. The magnetic free layer includes a first magnetic layer, a second ...
Semiconductor Device Patent Pack
Download 7936+ patent application PDFs
Semiconductor Device Patent Applications
Download 7936+ Semiconductor Device-related PDFs
For professional research & prior art discovery
inventor
  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Semiconductor device
Panasonic Intellectual Property Management Co., Ltd.
October 12, 2017 - N°20170294559

The semiconductor device includes: an algan layer; a contact electrode; an insulating film; and a passivation film. The semiconductor device further includes: an extended wire extending over the contact electrode and the insulating film; and a pad electrode electrically connected to the extended wire. The passivation film covers the insulating film and the extended wire and including an opening for ...
Multi-wafer based light absorption apparatus and applications thereof
Artilux Corporation
October 12, 2017 - N°20170294550

Structures and techniques introduced here enable the design and fabrication of photodetectors (pds) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on pds' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-pd homogeneous wafer bonding technique, a pre-pd heterogeneous wafer bonding technique, a post-pd ...
Semiconductor device and method for manufacturing the same
Semiconductor Energy Laboratory Co., Ltd.
October 12, 2017 - N°20170294542

A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of ...
Semiconductor device and manufacturing method thereof
Semiconductor Energy Laboratory Co., Ltd.
October 12, 2017 - N°20170294541

A highly reliable semiconductor device includes a first insulator, a second insulator, a first conductor, a third insulator, an oxide semiconductor, second and third conductors, a fourth insulator, a fourth conductor overlapping with a region between the second and third conductors, a fifth insulator, and a sixth insulator in this order. The fourth insulator is in contact with top and ...
Semiconductor device and method of fabricating semiconductor device
United Microelectronics Corp.
October 12, 2017 - N°20170294539

The present invention provides a semiconductor device, including a substrate, two gate structures disposed on a channel region of the substrate, an epitaxial layer disposed in the substrate between two gate structures, a first dislocation disposed in the epitaxial layer, wherein the profile of the first dislocation has at least two non-parallel slanting lines, and a second dislocation disposed adjacent ...
Semiconductor device and a method for manufacturing a semiconductor device
Renesas Electronics Corporation
October 12, 2017 - N°20170294538

The characteristics of a semiconductor device are improved. A semiconductor device has a potential fixed layer containing a p type impurity, a channel layer, and a barrier layer, formed over a substrate, and a gate electrode arranged in a trench penetrating through the barrier layer, and reaching some point of the channel layer via a gate insulation film. Source and ...
Semiconductor device and fabrication method thereof
Semiconductor Manufacturing International (beijing) Corporation
October 12, 2017 - N°20170294535

A semiconductor device and fabrication method thereof are provided. The method includes forming at least one dummy gate structure and sidewall spacers of the dummy gate structure in a first dielectric layer, together on a substrate, and removing the dummy gate structure, thereby forming a first opening between the sidewall spacers. The method further includes forming a gate structure in ...
Semiconductor Device Patent Pack
Download 7936+ patent application PDFs
Semiconductor Device Patent Applications
Download 7936+ Semiconductor Device-related PDFs
For professional research & prior art discovery
inventor
  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Bulk to silicon on insulator device
International Business Machines Corporation
October 12, 2017 - N°20170294533

A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of the bulk semiconductor substrate adjacent to the fin. The method further includes removing portions of the first insulator layer to reduce a thickness of the first insulator layer and expose a sidewall of the fin. ...
Semiconductor devices with integrated schotky diodes and methods of fabrication
Nxp Usa, Inc.
October 12, 2017 - N°20170294531

An embodiment of a semiconductor device includes a semiconductor substrate that includes an upper surface and a channel, a gate electrode disposed over the substrate electrically coupled to the channel, and a schottky metal layer disposed over the substrate adjacent the gate electrode. The schottky metal layer includes a schottky contact electrically coupled to the channel which provides a schottky ...
High electron mobility transistors with improved heat dissipation
University Of Florida Research Foundation, Incorporated
October 12, 2017 - N°20170294528

Iii-nitride based high electron mobility transistors (hemts), such as algan/gan hemts on silicon substrates, with improved heat dissipation are described herein. A semiconductor device having improved heat dissipation may include a substrate having a top surface and a bottom surface, a nucleation layer on the top surface of the substrate, a transition layer on the nucleation layer, a buffer ...
Semiconductor device and method for manufacturing the same
Mitsubishi Electric Corporation
October 12, 2017 - N°20170294527

An insulated gate bipolar transistor (igbt) includes: a p base layer disposed close to a front surface of an n-type silicon substrate; and a deep n+ buffer layer and a shallow n+ buffer layer disposed close to a back surface of the n-type silicon substrate. The p base layer has a higher impurity concentration than the n-type silicon substrate. The ...
Reverse-conducting semiconductor device
Abb Schweiz Ag
October 12, 2017 - N°20170294526

A reverse-conducting mos device is provided having an active cell region and a termination region. Between a first and second main side. The active cell region comprises a plurality of mos cells with a base layer of a second conductivity type. On the first main side a bar of the second conductivity type, which has a higher maximum doping concentration ...
Method for fabricating semiconductor device
United Microelectronics Corp.
October 12, 2017 - N°20170294523

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first organic layer on the substrate; patterning the first organic layer to form an opening; forming a second organic layer in the opening; and removing the first organic layer to form a patterned second organic layer on the substrate.
Method for manufacturing a semiconductor device having a super junction mosfet
Fuji Electric Co., Ltd.
October 12, 2017 - N°20170294521

A method of manufacturing a super junction mosfet, which includes a parallel pn layer including a plurality of pn junctions and in which an n-type drift region and a p-type partition region interposed between the pn junctions are alternately arranged and contact each other, a mos gate structure on the surface of the parallel pn layer, and an n-type buffer ...
Semiconductor device and method for manufacturing the same
Rohm Co., Ltd.
October 12, 2017 - N°20170294518

A semiconductor device including, a semiconductor layer including a plurality of first trenches formed therein and a second trench formed in a region between the first trenches, channel regions formed in regions between the first and second trenches in a surface layer portion of the semiconductor layer, field plate electrodes embedded at bottom portion sides of the respective first trenches, ...
Loading