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Semiconductor Device

Semiconductor Device-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Semiconductor device, video display system, and method of processing signal
Lapis Semiconductor Co., Ltd.
February 15, 2018 - N°20180048868

A semiconductor device includes a first input unit for receiving a first signal; a first processing unit configured to perform a frequency dispersion processing on the first signal; a first output unit configured to output the first signal or the first signal on which the first processing unit performs the frequency dispersion processing; a second input unit configured to receive ...
Semiconductor device, radio communication device, and control method for radio communication device
Renesas Electronics Corporation
February 15, 2018 - N°20180048405

A semiconductor device includes a receiving unit that receives a radio signal, which includes a quadrature conversion circuit and an analog-to-digital converter, a received signal strength measurement unit, a threshold comparison unit, a demodulation unit, and a threshold setting unit. The analog-to-digital converter converts a received radio signal from the quadrature conversion circuit to a received signal. The received signal ...
Drive circuit and semiconductor device
Mitsubishi Electric Corporation
February 15, 2018 - N°20180048302

A drive circuit includes one constant voltage circuit for generating a first voltage and a second voltage, a first output circuit connected to the constant voltage circuit to receive the first voltage and the second voltage and receive a gate drive signal, a second output circuit connected to the constant voltage circuit to receive the first voltage and the second ...
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Semiconductor Device Patent Applications
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Oled with a flattening layer between two barrier layers
Japan Display Inc.
February 15, 2018 - N°20180047941

According to one embodiment, an organic semiconductor device includes a supporting substrate, a plurality of organic el light emitting elements, a first barrier layer, a flattening layer, and a second barrier layer. The flattening layer exists sporadically and makes gentle in inclination steep elevation change present in the surface of the first barrier layer. The first barrier layer and the ...
Separation method, light-emitting device, module, and electronic device
Semiconductor Energy Laboratory Co., Ltd.
February 15, 2018 - N°20180047902

A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming ...
Protective capping layer for spalled gallium nitride
International Business Machines Corporation
February 15, 2018 - N°20180047875

A method of producing a semiconductor device includes forming a stack including a semiconductor material having a group iii nitride semiconductor material formed on a growth substrate, a protective layer formed over the group iii nitride semiconductor material, and a handle layer and a stressor layer formed over the protective layer. The stack is spalled to separate the growth substrate ...
Semiconductor Device Patent Pack
Download 7936+ patent application PDFs
Semiconductor Device Patent Applications
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For professional research & prior art discovery
inventor
  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Method of manufacturing a semiconductor device
Sii Semiconductor Corporation
February 15, 2018 - N°20180047858

Provided is a method of manufacturing a semiconductor device having a photodiode that has a shallow p-n junction and thus achieves high sensitivity to an ultraviolet ray, in which an oxide containing impurities at high concentration is deposited on the surface of the silicon substrate, and thereafter a diffusion region is formed to have a shallow junction by performing thermal ...
Nanosheet and nanowire mosfet with sharp source/drain junction
International Business Machines Corporation
February 15, 2018 - N°20180047853

A semiconductor device that includes a gate structure present on at least two suspended channel structures, and a composite spacer present on sidewalls of the gate structure. The composite spacer includes a cladding spacer present along a cap portion of the gate structure, and an inner spacer along the channel portion of the gate structure between adjacent channel semiconductor layers ...
Semiconductor device
Semiconductor Energy Laboratory Co., Ltd.
February 15, 2018 - N°20180047852

It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like ...
Method for manufacturing semiconductor device and manufacturing apparatus of semiconductor device
Semiconductor Energy Laboratory Co., Ltd.
February 15, 2018 - N°20180047850

A semiconductor device including an oxide semiconductor and an organic resin film is manufactured in the following manner. Heat treatment is performed on a first substrate provided with an organic resin film over a transistor including an oxide semiconductor in a reduced pressure atmosphere; handling of the first substrate is performed in an atmosphere containing moisture as little as possible ...
Method of fabricating semiconductor device
United Microelectronics Corp.
February 15, 2018 - N°20180047848

A semiconductor device and a method of fabricating the same, the semiconductor device includes a plurality of fin shaped structures, a trench, a spacing layer and a dummy gate structure. The fin shaped structures are disposed on a substrate. The trench is disposed between the fin shaped structures. The spacing layer is disposed on sidewalls of the trench, wherein the ...
Method of forming a semiconductor device with multiple etch stop layers and inter-layer dielectrics
Taiwan Semiconductor Manufacturing Company, Ltd.
February 15, 2018 - N°20180047841

An embodiment is a semiconductor device comprising a first gate structure over a semiconductor substrate, a first etch stop layer (esl) over the semiconductor substrate and the first gate, the first esl having a curved top surface, and a first inter-layer dielectric (ild) on the first esl, the first ild having a curved top surface. The semiconductor device further comprises ...
Semiconductor device and semiconductor device manufacturing method
Fujitsu Limited
February 15, 2018 - N°20180047840

A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor above a substrate, a second semiconductor layer formed of a material including inaln or inalgan above the first semiconductor layer, a third semiconductor layer formed of a material including aln above the second semiconductor layer, a fourth semiconductor layer formed of a material including gan above the ...
Semiconductor Device Patent Pack
Download 7936+ patent application PDFs
Semiconductor Device Patent Applications
Download 7936+ Semiconductor Device-related PDFs
For professional research & prior art discovery
inventor
  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Self-aligned inner-spacer replacement process using implantation
International Business Machines Corporation
February 15, 2018 - N°20180047835

A method for manufacturing a semiconductor device includes forming a stacked configuration of first and second semiconductor layers on a semiconductor substrate, wherein the stacked configuration comprises a repeating arrangement of a second semiconductor layer stacked on a first semiconductor layer, forming a plurality of dummy gates spaced apart from each other on the stacked configuration, wherein the plurality of ...
Self-aligned inner-spacer replacement process using implantation
International Business Machines Corporation
February 15, 2018 - N°20180047834

A method for manufacturing a semiconductor device includes forming a stacked configuration of first and second semiconductor layers on a semiconductor substrate, wherein the stacked configuration comprises a repeating arrangement of a second semiconductor layer stacked on a first semiconductor layer, forming a plurality of dummy gates spaced apart from each other on the stacked configuration, wherein the plurality of ...
Semiconductor device and manufacturing method thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
February 15, 2018 - N°20180047833

A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure. The first fin structure and the second fin structure are both disposed over the substrate, and extend in a first direction in plan view. The gate structure is disposed over parts of the first and second fin ...
Extension region for a semiconductor device
Tokyo Electron Limited
February 15, 2018 - N°20180047832

A method of forming a semiconductor device having a channel and a source-drain coupled to the channel. The method includes etching a channel region such that an end of the channel region forms a recess within a gate structure surrounding the channel region. An extension region is formed in contact with the channel region and at least partially filling the ...
Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts
Globalfoundries Inc.
February 15, 2018 - N°20180047824

An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an ...
Semiconductor device
Unisantis Electronics Singapore Pte. Ltd.
February 15, 2018 - N°20180047823

A semiconductor device includes a pillar-shaped semiconductor layer formed on a substrate; a first insulator surrounding the pillar-shaped semiconductor layer; a first gate surrounding the first insulator and made of a metal having a first work function; a second gate surrounding the first insulator and made of a metal having a second work function different from the first work function, ...
Semiconductor device
Delta Electronics, Inc.
February 15, 2018 - N°20180047822

A semiconductor device includes an active layer, a source electrode, a drain electrode, a gate electrode, a first insulating layer, a gate metal layer, a via, a first source metal layer, a drain metal layer, and a second source metal layer. The source electrode, the drain electrode, and the gate electrode are present on the active layer. The first insulating ...
Semiconductor device and method of manufacturing the same
Toyota Jidosha Kabushiki Kaisha
February 15, 2018 - N°20180047821

A method of manufacturing a semiconductor device, the method comprising: forming trenches in an upper surface of a semiconductor substrate, the semiconductor substrate comprising a first region and a second region, the trenches in the first region having a wide width, and the trenches in the second region having a narrow width; forming insulating films on inner surfaces of the ...
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