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Semiconductor Device

Semiconductor Device-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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NEW Semiconductor device
Longitude Semiconductor S.a.r.l.
May 17, 2018 - N°20180139847

One semiconductor device includes a wiring substrate, a semiconductor chip, and a sealing body. The wiring substrate includes an insulating base material, a first conductive pattern formed on one surface of the insulating base material, and a second conductive pattern formed on one surface of the insulating base material, connected to the first conductive pattern and having an end face ...
NEW Image processing device and semiconductor device
Renesas Electronics Corporation
May 17, 2018 - N°20180139460

In an image processing device, a motion image decoding processing unit extracts a feature amount of a target image to be decoded from an input stream, and changes a read size of a cache fill from an external memory to a cache memory, based on the feature amount. The feature amount represents an intra macro block ratio in, for example, ...
NEW Data communication system and semiconductor device
Seiko Epson Corporation
May 17, 2018 - N°20180138908

A data communication system has a first data communication circuit for outputting a clock signal to a clock signal line, receiving data input from a data signal line, and outputting data as open drain output to the data signal line, a second data communication circuit for receiving input of a clock signal from the clock signal line, receiving input of ...
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Semiconductor Device Patent Applications
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NEW Semiconductor device and system
Samsung Electronics Co., Ltd.
May 17, 2018 - N°20180138806

A semiconductor device includes an inductor selectively connected to a power supply voltage and configured to store and release energy; a first transistor connected between the power supply voltage and the inductor and configured to provide the power supply voltage to the inductor; a second transistor connected to the first transistor in series, connected between the inductor and a ground ...
NEW Semiconductor device and semiconductor device mounting method
Shindengen Electric Manufacturing Co., Ltd.
May 17, 2018 - N°20180138788

A semiconductor device includes a device main body that is semi-annular, the device main body having an inner circumferential surface formed arcuate in plan view and an outer circumferential surface formed arcuate in plan view. Cutout portions are formed on a first end surface, on one end side, in a circumferential direction, of the device main body and a second ...
NEW Semiconductor device for controlling power source
Mitsumi Electric Co., Ltd.
May 17, 2018 - N°20180138693

A semiconductor device for power supply control includes an over-current detection circuit which detects an over-current state on a secondary side of a transformer by comparing a voltage in proportion to current flowing in a primary-side winding wire with an over-current detection voltage; a control signal generation circuit which generates a control signal to turn off a switching element when ...
NEW Semiconductor Device Patent Pack
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Semiconductor Device Patent Applications
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inventor
  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
NEW Semiconductor wafers and semiconductor devices with barrier layer and methods of manufacturing
Infineon Technologies Ag
May 17, 2018 - N°20180138353

A semiconductor ingot is sliced to obtain a semiconductor slice with a front side surface and a rear side surface parallel to the front side surface. A passivation layer is formed directly on at least one of the front side surface and the rear side surface. A barrier layer including least one of silicon carbide, a ternary nitride, and a ...
NEW Semiconductor device
Renesas Electronics Corporation
May 17, 2018 - N°20180138325

Germanium (ge) contamination to a semiconductor manufacturing apparatus is suppressed. Germanium is a dissimilar material in a silicon semiconductor process. A semiconductor device is provided with a ge photodiode including an n-type germanium layer, and a plug capacitively coupled to the n-type germanium layer. In other words, the n-type germanium layer of the ge photodiode and the plug are not ...
NEW Monolithic series switching semiconductor device having low-resistance substrate contact structure and method
Semiconductor Components Industries, Llc
May 17, 2018 - N°20180138319

A semiconductor device structure includes a region of semiconductor material with a first major surface and an opposing second major surface. A contact structure is disposed in a first portion of the region of semiconductor material and includes a tub structure extending from adjacent a first portion of the first major surface. A plurality of structures comprising portions of the ...
NEW Semiconductor device and method for manufacturing same
Renesas Electronics Corporation
May 17, 2018 - N°20180138318

A semiconductor device includes a semiconductor substrate including a main surface, an element separation film formed over the main surface, and a fin protruding from the element separation film and extending in the first direction in plan view. The semiconductor device further includes a control gate electrode extending in the second direction that is orthogonal to the first direction along ...
NEW Semiconductor device
United Microelectronics Corp.
May 17, 2018 - N°20180138316

A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a first dielectric layer covering on the oxide-semiconductor layer and the source/drain regions, a second gate between the two source/drain regions and partially covering the oxide-semiconductor layer, and a charge storage structure between the first gate electrode and the ...
NEW Semiconductor device
Rohm Co., Ltd.
May 17, 2018 - N°20180138313

A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of ...
NEW Semiconductor device and method of manufacturing the same
May 17, 2018 - N°20180138311

The semiconductor device according to an aspect of the present invention includes a semiconductor substrate, a drain region, a drift region, a base region, a source region, a gate electrode, an interlayer insulating film, a conductive layer electrically coupled to the drain region, a wiring line, and a contact plug electrically coupled to the source region and the wiring line. ...
NEW Semiconductor Device Patent Pack
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Semiconductor Device Patent Applications
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inventor
  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
NEW Semiconductor device and method of manufacturing semiconductor device
Fuji Electric Co., Ltd.
May 17, 2018 - N°20180138309

A semiconductor device includes an active region provided in an n+-type silicon carbide substrate and through which main current flows, a termination region that surrounds a periphery of the active region, and a p-type silicon carbide layer provided on a front surface of the n+-type silicon carbide substrate and extending into the termination region. A region of the ...
NEW High-electron-mobility transistor (hemt) semiconductor devices with reduced dynamic resistance
Semiconductor Components Industries, Llc
May 17, 2018 - N°20180138306

High-electron-mobility transistor (hemt) devices are described in this patent application. In some implementations, the hemt devices can include a back barrier hole injection structure. In some implementations, the hemt devices include a conductive striped portion electrically coupled to a drain contact.
NEW Semiconductor device and method of manufacturing the same
Gpower Semiconductor, Inc.
May 17, 2018 - N°20180138305

A semiconductor device comprises: a substrate; a semiconductor layer on the substrate; and a gallium nitride cap layer on the semiconductor layer. The gallium nitride cap layer has a thickness of 3 nm to 5. 8 nm.
NEW High electron mobility transistor with graded back-barrier region
Infineon Technologies Austria Ag
May 17, 2018 - N°20180138304

A semiconductor device includes a type iii-v semiconductor body having a main surface and a rear surface opposite the main surface. A barrier region is disposed beneath the main surface. A buffer region is disposed beneath the barrier region. A first two-dimensional charge carrier gas region forms near an interface between the barrier region and the buffer region. A second ...
NEW Compound semiconductor device
Advantest Corporation
May 17, 2018 - N°20180138302

A compound semiconductor device includes a first transistor formed on a gan epitaxial layer. The first transistor includes a gate electrode, a source electrode, a drain electrode, and a protective film covering them. End portions of the first transistor do not overhang the protective film, and the concentration of fluorine in the gan epitaxial layer in the region where the ...
NEW Semiconductor device and method of manufacturing the same
Sanken Electric Co., Ltd.
May 17, 2018 - N°20180138300

A semiconductor device includes: a semiconductor substrate including: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed in a surface of the body region; a trench, which reaches the drift region; ...
NEW Semiconductor device
Fuji Electric Co., Ltd.
May 17, 2018 - N°20180138299

A semiconductor device includes: a semiconductor substrate having a first conductivity-type drift region; a transistor portion; and a diode portion, wherein the transistor portion and the diode portion each have: a second conductivity-type base region; a plurality of trench portions penetrating the base region and having conductive portions provided therein; and a mesa portion sandwiched by trench portions, the transistor ...
NEW High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
Sunedison Semiconductor Limited (uen201334164h)
May 17, 2018 - N°20180138298

A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm; a semiconductor nitride layer in contact with the semiconductor handle substrate, the semiconductor nitride layer selected from the group consisting of aluminum nitride, boron nitride, ...
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