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Semiconductor Device

Semiconductor Device-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Electronic apparatus
Canon Kabushiki Kaisha
August 10, 2017 - N°20170231084

An electronic apparatus includes a conductive member and a printed circuit board, wherein the printed circuit board includes a printed wiring board having a signal wiring formed thereon, a first semiconductor device configured to output a digital signal to the signal wiring, and a second semiconductor device configured to input the digital signal output from the first semiconductor device via ...
Semiconductor device
Renesas Electronics Corporation
August 10, 2017 - N°20170230051

A delay time is set only within the variable delay time of a clock driver and cannot be set longer than the variable delay time of the clock driver. A control circuit adjusts the delay amount of a variable delay circuit so as to synchronize a pulse phase after a first pulse outputted from a pulse generation circuit passes through ...
Semiconductor device, electronic component, and electronic device
Semiconductor Energy Laboratory Co., Ltd.
August 10, 2017 - N°20170230041

Provided is a semiconductor device that can directly compare two negative potentials. The semiconductor device includes a first to a third transistor and a load and is configured to compare a first negative potential and a second negative potential. The first negative potential and the second negative potential are input to a gate of the first transistor and a gate ...
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Semiconductor device and semiconductor module
Mitsubishi Electric Corporation
August 10, 2017 - N°20170229952

A semiconductor device includes: a voltage-dividing resistor circuit including first and second resistors connected in series between a power supply potential and a reference potential and outputting a potential at a point of connection between the first and second resistors; a transient response detection circuit including a third resistor having a first end connected to the power supply potential and ...
Antenna module and circuit module
Murata Manufacturing Co., Ltd.
August 10, 2017 - N°20170229769

An antenna that is formed of a conductor pattern is disposed on a dielectric substrate. A high-frequency semiconductor device that supplies a high-frequency signal to the antenna is mounted on the bottom surface of the dielectric substrate. A plurality of conductor columns project from the bottom surface. The conductor columns are embedded in a dielectric member that is disposed on ...
Lead frame and semiconductor device
Nichia Corporation
August 10, 2017 - N°20170229628

A light emitting device includes a resin package and a light emitting element. The resin package has a cavity. The resin package includes first and second lead portions and a resin member. The first lead portion includes a first lead side surface and a lead recess portion that extends from the first lead side surface in a direction away from ...
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Semiconductor Device Patent Applications
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  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
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Nitride nanowires and method of producing such
Qunano Ab
August 10, 2017 - N°20170229613

The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, leds and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a cvd based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least ...
Semiconductor device and method for manufacturing the same
Semiconductor Energy Laboratory Co., Ltd.
August 10, 2017 - N°20170229585

A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact ...
Iii-v fins by aspect ratio trapping and self-aligned etch to remove rough epitaxy surface
International Business Machines Corporation
August 10, 2017 - N°20170229579

A semiconductor device that includes a fin structure of a type iii-v semiconductor material that is substantially free of defects, and has sidewalls that are substantially free of roughness caused by epitaxially growing the type iii-v semiconductor material abutting a dielectric material. The semiconductor device further includes a gate structure present on a channel portion of the fin structure; and ...
Semiconductor device
Shindengen Electric Manufacturing Co., Ltd.
August 10, 2017 - N°20170229574

A semiconductor apparatus includes: a gate electrode in a trench and facing a p type base region with a gate insulating film interposed therebetween on a portion of a side wall; a shield electrode in the trench and between the gate electrode and a bottom of the trench; an electric insulating region in the trench, the electric insulating region extending ...
Semiconductor device
Fuji Electric Co., Ltd.
August 10, 2017 - N°20170229573

A mos gate structure is provided on a p-type base layer side of a silicon carbide semiconductor base formed by sequentially forming on a front surface of an n+-type silicon carbide substrate, an n-type drift layer and a p-type base layer by epitaxial growth. On the base front surface, in an edge termination structure region, a step portion occurring ...
Semiconductor device and method of manufacturing same
Renesas Electronics Corporation
August 10, 2017 - N°20170229572

To provide a semiconductor device equipped with a snubber portion having an improved withstand voltage and capable of reducing a surge voltage at turn-off of an insulated gate field effect transistor portion. The concentration of a first conductivity type impurity in a snubber semiconductor region is greater than that in a drift layer. The thickness of a snubber insulating film ...
Semiconductor structure and manufacturing method thereof
Taiwan Semiconductor Manufacturing Company Ltd.
August 10, 2017 - N°20170229568

The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a substrate, a first iii-v compound layer over the substrate, a second iii-v compound layer on the first iii-v compound layer, a third iii-v compound layer on the second iii-v compound layer, a source region on the third iii-v compound layer, and ...
Semiconductor Device Patent Pack
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Semiconductor Device Patent Applications
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inventor
  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
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  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Semiconductor device and manufacturing method thereof
Semiconductor Energy Laboratory Co., Ltd.
August 10, 2017 - N°20170229563

When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a three-layer structure and two-step etching is performed. In the first etching process, an etching method in which the etching rates for at least the second film and the third film are high is employed, and the ...
Semiconductor device manufacturing method
Renesas Electronics Corporation
August 10, 2017 - N°20170229562

When forming a misfet by replacing a dummy gate electrode with a metal gate electrode in a gate last process, formation caused by polishing of an interlayer insulation film of a silicide layer over an upper surface of the dummy gate electrode to result in hampering the removal of the dummy gate is prevented. In the gate last process, when ...
Finfet devices having a material formed on reduced source/drain region
Semiconductor Manufacturing International (shanghai) Corporation
August 10, 2017 - N°20170229559

A semiconductor device includes a fin structure of a first semiconductor material on a substrate. The fin structure has a source region, a drain region, and a channel region between the source region and the drain region. The device also has a gate structure overlying the fin structure. The source region includes an inner portion of the first semiconductor material ...
Vertical transistor device
International Business Machines Corporation
August 10, 2017 - N°20170229558

According to an embodiment of the present invention, a method for forming a semiconductor device includes pattering a first fin in a semiconductor substrate, and forming a liner layer over the first fin. The method further includes removing a first portion of the liner layer, and removing a portion of the exposed semiconductor substrate to form a first cavity. The ...
Method for manufacturing semiconductor device
Renesas Electronics Corporation
August 10, 2017 - N°20170229557

A method for manufacturing a semiconductor device includes carrying out a first heat treatment accompanied by nitration on a first insulating film and a silicon carbide substrate in a first gas atmosphere, after the carrying out of the first heat treatment and after a temperature of the silicon carbide substrate has become 700° c. Or less, removing the silicon carbide ...
Vertical transistor device
International Business Machines Corporation
August 10, 2017 - N°20170229556

According to an embodiment of the present invention, a method for forming a semiconductor device includes pattering a first fin in a semiconductor substrate, and forming a liner layer over the first fin. The method further includes removing a first portion of the liner layer, and removing a portion of the exposed semiconductor substrate to form a first cavity. The ...
Nanowire semiconductor device including lateral-etch barrier region
International Business Machines Corporation
August 10, 2017 - N°20170229553

A semiconductor device includes a semiconductor-on-insulator wafer having a buried layer. The buried layer includes therein opposing etch barrier regions and a gate region between the etch barrier regions. The semiconductor device further includes at least one nanowire having a channel portion interposed between opposing source/drain portions. The channel portion is suspended in the gate region. A gate electrode ...
Semiconductor device and method of manufacturing the same
Mitsubishi Electric Corporation
August 10, 2017 - N°20170229552

A semiconductor device having electrodes of three or more levels, includes: a semiconductor substrate; an epitaxial layer formed on the semiconductor substrate; a transistor formed on the epitaxial layer; a source electrode formed on the epitaxial layer and electrically connected to a source of the transistor; and a gate drawing electrode formed on the epitaxial layer and electrically connected to ...
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