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Semiconductor Device

Semiconductor Device-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Semiconductor device including buffer circuit
Micron Technology, Inc.
December 07, 2017 - N°20170353183

A device includes a power supply line, an output terminal, a circuit configured to perform a logic operation on a first signal and a second signal to produce a third signal, first, second and third transistors. The first transistor is coupled between the power supply line and the output terminal and includes a control gate supplied with the third signal. ...
Semiconductor device, power conversion apparatus, and vehicle
Kabushiki Kaisha Toshiba
December 07, 2017 - N°20170353128

A semiconductor device according to an embodiment includes: a first transistor having a first electrode, a second electrode, and a first control electrode, the first transistor performing a switching operation; a second transistor having a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode, the second transistor performing an analog operation; and a ...
Semiconductor device and method for manufacturing the same
Semiconductor Energy Laboratory Co., Ltd.
December 07, 2017 - N°20170352777

Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, ...
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Semiconductor device
w1−w2
December 07, 2017 - N°20170352765

A semiconductor device (100) includes: a substrate (10); and a thin film transistor (5) supported on the substrate, the thin film transistor including a gate electrode (12), an oxide semiconductor layer (18), a gate insulating layer (20) provided between the gate electrode and the oxide semiconductor layer, and a source electrode (14) and a drain electrode (16) electrically connected to the oxide semiconductor layer, wherein: the drain electrode ...
Methods for reducing contact resistance in semiconductor manufacturing process
Taiwan Semiconductor Manufacturing Co., Ltd.
December 07, 2017 - N°20170352762

A method of forming a semiconductor device includes forming a fin on a substrate and forming a source/drain region on the fin. The method further includes forming a doped metal silicide layer on the source/drain region and forming a super-saturated doped interface between the doped metal silicide and the source/drain region. An example benefit includes reduction of ...
Method of forming strained structures of semiconductor devices
Taiwan Semiconductor Manufacturing Company, Ltd.
December 07, 2017 - N°20170352760

A method of fabricating a semiconductor device comprises providing a substrate with a shallow trench isolation (sti) within the substrate and a gate stack. A cavity is formed between the gate stack and the sti. The cavity comprises one sidewall formed by the sti, one sidewall formed by the substrate, and a bottom surface formed by the substrate. A film ...
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Semiconductor Device Patent Applications
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  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
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Semiconductor device and manufacturing method therefor
Semiconductor Manufacturing International (beijing) Corporation
December 07, 2017 - N°20170352758

The present disclosure relates to the technical field of semiconductors and discloses a semiconductor device and a manufacturing method therefor. Forms of the method may include: providing a substrate structure, where the substrate structure includes: a semiconductor substrate, a semiconductor fin on the semiconductor substrate, isolation regions at two sides of the semiconductor fin, a gate dielectric layer on a ...
Semiconductor device and method of making
Freescale Semiconductor, Inc.
December 07, 2017 - N°20170352756

A semiconductor device is disclosed that includes a first region of a first conductivity type that includes a drain, a region of a second conductivity type abutting the first region in a lateral direction and a vertical direction to form an interface between the first conductivity type and the second conductivity type, wherein the drain region is spaced apart from ...
Semiconductor device, fabrication method for semiconductor device, power supply apparatus and high-frequency amplifier
Fujitsu Limited
December 07, 2017 - N°20170352755

A semiconductor device is configured including a p-type back barrier layer provided over a substrate and formed from a p-type nitride semiconductor in which mg or zn is doped, a nitride semiconductor stacked structure provided over the p-type back barrier layer, the nitride semiconductor stacked structure including an electron transit layer and an electron supply layer, a source electrode, a ...
Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier
Fujitsu Limited
December 07, 2017 - N°20170352752

A semiconductor device includes: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a first oxidized region near an interface with a region of the insulating film below the gate electrode, the first oxidized region having an oxygen concentration higher than ...
Single-electron transistor with self-aligned coulomb blockade
International Business Machines Corporation
December 07, 2017 - N°20170352751

Semiconductor devices and methods of making the same include forming a gate structure on a thin semiconductor layer. Additional semiconductor material is formed on the thin semiconductor layer. The thin semiconductor layer is etched back and the additional semiconductor material to form source and drain regions and a channel region, with notches separating the source and drain region from the ...
Semiconductor device
Denso Corporation
December 07, 2017 - N°20170352747

A semiconductor device includes: a semiconductor substrate having a drift layer; a base layer on the drift layer; a collector layer and a cathode layer arranged on the drift layer opposite to the base layer; multiple trenches penetrating the base layer and reaching the drift layer, and arranged along one direction; a gate electrode arranged in each trench via a ...
Semiconductor device
Semiconductor Energy Laboratory Co., Ltd.
December 07, 2017 - N°20170352746

A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at ...
Semiconductor Device Patent Pack
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Semiconductor Device Patent Applications
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inventor
  • 7936+ full patent PDF documents of Semiconductor Device-related inventions.
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Semiconductor device structure with fin structure and method for forming the same
Taiwan Semiconductor Manufacturing Co., Ltd.
December 07, 2017 - N°20170352740

A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first fin structure and a second fin structure over the substrate. There is a gap between the first fin structure and the second fin structure. The semiconductor device structure includes an isolation structure having a thin portion and a thick portion. ...
Method and device for compound semiconductor fin structure
Semiconductor Manufacturing International (beijing) Corporation
December 07, 2017 - N°20170352739

A method of manufacturing a semiconductor device includes forming a first semiconductor layer on a substrate, forming a stack of semiconductor layer structures on the first semiconductor layer, and etching the stack to form a fin structure. Each of the semiconductor layer structures includes a first insulator layer and a second semiconductor layer on the first insulator layer. The first ...
Spatially decoupled floating gate semiconductor device
International Business Machines Corporation
December 07, 2017 - N°20170352734

A method includes forming a tunneling dielectric layer on a semiconductor substrate, a first portion of the tunneling dielectric layer is directly above a channel region in the semiconductor substrate and a second portion of the tunneling dielectric layer is directly above source-drain regions located on opposing sides of the channel region, the second portion of the tunneling dielectric layer ...
Semiconductor device and method of manufacturing semiconductor device
Fuji Electric Co., Ltd.
December 07, 2017 - N°20170352733

In a semiconductor device, an interlayer insulating film electrically insulating a gate electrode and a source electrode has a structure in which a bpsg film and a nsg film are sequentially stacked. Further, the interlayer insulating film has a structure in which the bpsg film, the nsg film, and a sin film are sequentially stacked, or a structure in which ...
Semiconductor device
Mitsubishi Electric Corporation
December 07, 2017 - N°20170352730

The present invention relates to a vertical semiconductor device such as an igbt or a diode which includes an n buffer layer formed in the undersurface of and adjacent to an n− drift layer. A concentration slope δ, which is derived from displacements in a depth tb (μm) and an impurity concentration cb (cm−3), from ...
Semiconductor devices including contact structures that partially overlap silicide layers
Samsung Electronics Co., Ltd.
December 07, 2017 - N°20170352728

Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes an isolation layer defining active portions of the substrate that are spaced apart from each other in a direction. The semiconductor device includes an epitaxial layer on the active portions. The semiconductor device includes a metal silicide layer on the epitaxial layer. Moreover, the semiconductor device ...
Power semiconductor device and method of fabricating the same
Hyundai Autron Co., Ltd
December 07, 2017 - N°20170352725

Provided is a power semiconductor device comprising a gate electrode in a trench of a substrate; a body region having a first conductivity type on one side of the gate electrode; a source region having a second conductivity type adjacent to the gate electrode; a floating region having a first conductivity type on the other side of the gate electrode; ...
Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
Maxpower Semiconductor, Inc.
December 07, 2017 - N°20170352724

Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.
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