Popular terms

Follow us on Twitter
twitter icon@FreshPatents

Web & Computing
Cloud Computing
Ecommerce
Search patents
Smartphone patents
Social Media patents
Video patents
Website patents
Web Server
Android patents
Copyright patents
Database patents
Programming patents
Wearable Computing
Webcam patents

Web Companies
Apple patents
Google patents
Adobe patents
Ebay patents
Oracle patents
Yahoo patents

[SEARCH]

Semiconductor Device patents



      
           
This page is updated frequently with new Semiconductor Device-related patent applications.



Date/App# patent app List of recent Semiconductor Device-related patents
02/04/16
20160036343 
 Semiconductor device patent thumbnailnew patent Semiconductor device
Converter output terminals of a converter are located adjacent to each other on a first side and an external terminal for external connection of a composite module is located adjacent to the converter output terminal. Ac input terminals of the converter are located on a second side.
Mitsubishi Electric Corporation


02/04/16
20160036331 
 Semiconductor device and dc-to-dc converter patent thumbnailnew patent Semiconductor device and dc-to-dc converter
In general, according to one embodiment, a semiconductor device includes a device main body, a semiconductor substrate. The device main body includes a semiconductor substrate mounting part and a first conductor provided around the semiconductor substrate mounting part.
Kabushiki Kaisha Toshiba


02/04/16
20160036316 
 Insulated gate semiconductor device patent thumbnailnew patent Insulated gate semiconductor device
An insulated gate semiconductor device includes an insulated gate semiconductor element, an output current detection unit, a voltage detection unit, and a heat generation amount suppression unit. The insulated gate semiconductor element on-operates by receiving a first gate voltage at a control terminal, and switches and outputs an input voltage to a load.
Fuji Electric Co., Ltd.


02/04/16
20160036315 
 Drive circuit and semiconductor device patent thumbnailnew patent Drive circuit and semiconductor device
Malfunction can be reliably avoided even when a signal that drives a high side power device is not normally transmitted in a level shift circuit. In a drive circuit, a pulse generator circuit generates a set signal and reset signal that causes a high side power device to be turned on or off.
Fuji Electric Co., Ltd.


02/04/16
20160035951 
 Optical semiconductor element mounting package, and optical semiconductor device using the same patent thumbnailnew patent Optical semiconductor element mounting package, and optical semiconductor device using the same
An optical semiconductor element mounting package that has good adhesion between the resin molding and the lead electrodes and has excellent reliability is provided, as well as an optical semiconductor device using the package is also provided. The optical semiconductor element mounting package having a recessed part that serves as an optical semiconductor element mounting region, wherein the package is formed by integrating: a resin molding composed of a thermosetting light-reflecting resin composition, which forms at least the side faces of the recessed part; and at least a pair of positive and negative lead electrodes disposed opposite each other so as to form part of the bottom face of the recessed part, and there is no gap at a joint face between the resin molding and the lead electrodes..
Hitachi Chemical Company, Ltd.


02/04/16
20160035941 
 High index dielectric film to increase extraction efficiency of nanowire leds patent thumbnailnew patent High index dielectric film to increase extraction efficiency of nanowire leds
Various embodiments include semiconductor devices, such as nanowire leds, that include a plurality of first conductivity type semiconductor nanowire cores located over a support, a plurality of second conductivity type semiconductor shells extending over and around the respective nanowire cores, and a layer of a high index of refraction material over at least a portion of a surface of at least one of the nanowire cores and the shells, wherein the high index of refraction material has an index of refraction that is between about 1.4 and about 4.5. Light extraction efficiency may be improved..
Glo Ab


02/04/16
20160035905 
 Semiconductor devices patent thumbnailnew patent Semiconductor devices
Provided are semiconductor devices. A semiconductor device includes a first well formed in a substrate; an element isolation layer formed on the first well; a second well formed in the first well on a first side of the element isolation layer; a third well formed in the second well, the third well has a higher concentration of impurities than the second well; a first electrode electrically connected to the third well; a fourth well formed in the first well on a second side of the element isolation layer; a fifth well formed in the fourth well, the fifth well has a different conductivity type from the fourth well; a second electrode electrically connected to the fifth well; and a sixth well overlapping the fourth well, the sixth well has a lower concentration of impurities than the fourth well..
Samsung Electronics Co., Ltd.


02/04/16
20160035898 
 Semiconductor device and manufacturing  semiconductor device using metal oxide patent thumbnailnew patent Semiconductor device and manufacturing semiconductor device using metal oxide
A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.. .
Samsung Electronics Co., Ltd.


02/04/16
20160035897 
 Semiconductor device patent thumbnailnew patent Semiconductor device
A transistor whose channel is formed in a semiconductor having dielectric anisotropy is provided. A transistor having a small subthreshold swing value is provided.
Semiconductor Energy Laboratory Co., Ltd.


02/04/16
20160035896 
 Semiconductor device, manufacturing method thereof, and electronic device patent thumbnailnew patent Semiconductor device, manufacturing method thereof, and electronic device
A gate insulating film is formed over an oxide semiconductor film. A gate electrode is formed over the gate insulating film.
Semiconductor Energy Laboratory Co., Ltd.


02/04/16
20160035888 
new patent

Junction fet semiconductor device with dummy mask structures for improved dimension control and forming the same


A method for semiconductor devices on a substrate includes using gate structures which serve as active gate structures in a mosfet region, as dummy gate structures in a jfet region of the device. The dummy gate electrodes are used as masks and determine the spacing between gate regions and source/drain regions, the width of the gate regions, and the spacing between adjacent gate regions according to some embodiments, thereby forming an accurately dimensioned transistor channel..
Taiwan Semiconductor Manufacturing Co., Ltd.


02/04/16
20160035887 
new patent

Semiconductor device and multiple gate field effect transistor


The present invention provides a semiconductor device, which includes a substrate, a first gate electrode, a second gate electrode, a source region and a drain region, wherein the first gate electrode and the second gate electrode are embedded in the substrate respectively; the source region is formed in the substrate, and at least a portion of the source region is disposed between the first gate electrode and the second gate electrode; and the drain region is formed in the substrate, and at least a portion of the drain region is disposed between the first gate electrode and the second gate electrode.. .
Realtek Semiconductor Corp.


02/04/16
20160035886 
new patent

Semiconductor device and formation thereof


A semiconductor device and method of formation are provided. The semiconductor device includes a first active region adjacent a channel, the channel, and a second active region adjacent the channel.
Taiwan Semiconductor Manufacturing Company Limited


02/04/16
20160035884 
new patent

Semiconductor device and manufacturing the same


A semiconductor device includes a semiconductor substrate, and a p-well and an n-type drift region disposed in the semiconductor substrate. The p-well includes a lower well region and an upper well region disposed above the lower well region.
Semiconductor Manufacturing International (shanghai) Corporation


02/04/16
20160035882 
new patent

Multiple semiconductor device trenches per cell pitch


A semiconductor device includes a plurality of field plate trenches formed in a semiconductor substrate, a plurality of gate trenches formed in the semiconductor substrate and spaced apart from the field plate trenches, and a plurality of device cells having a cell pitch defined by a distance from one side of a field plate trench to the same side of an adjacent field plate trench. Each device cell includes a first doped region of a first conductivity type and a second doped region of a second conductivity type adjacent the first doped region in a part of the semiconductor substrate disposed between the adjacent field plate trenches that define the cell pitch.
Infineon Technologies Austria Ag


02/04/16
20160035881 
new patent

Semiconductor device and manufacturing the same


A super junction mosfet includes a parallel pn layer including a plurality of pn junctions and in which an n-type drift region and a p-type partition region interposed between the pn junctions are alternately arranged and contact each other, a mos gate structure on the surface of the parallel pn layer, and an n-type buffer layer in contact with an opposite main surface. The impurity concentration of the buffer layer is equal to or less than that of the n-type drift region.
Fuji Electric Co., Ltd.


02/04/16
20160035879 
new patent

Semiconductor device


In general, according to one embodiment, a semiconductor device includes, a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, a fourth semiconductor region, a fifth semiconductor region, and a gate electrode. The third semiconductor region includes a first portion and a second portion.
Kabushiki Kaisha Toshiba


02/04/16
20160035878 
new patent

Finfet with dielectric isolation after gate module for improved source and drain region epitaxial growth


A method forming a semiconductor device that in one embodiment includes forming a gate structure on a channel region of fin structures, and forming a flowable dielectric material on a source region portion and a drain region portion of the fin structures. The flowable dielectric material is present at least between adjacent fin structures of the plurality of fin structures filling a space between the adjacent fin structures.
International Business Machines Corporation


02/04/16
20160035877 
new patent

Finfet having highly doped source and drain regions


A method of forming a semiconductor device that includes forming an in-situ doped semiconductor material on a semiconductor substrate, and forming fin structures from the in-situ doped semiconductor material. A sacrificial channel portion of the fin structures may be removed, wherein a source region and a drain region portion of the fin structures of the in-situ doped semiconductor material remain.
International Business Machines Corporation


02/04/16
20160035874 
new patent

Finfet device


A fin-type field-effect transistor (finfet) device includes a plurality of fins formed over a substrate. The semiconductor device further includes a dielectric layer filled in a space between each fin and over a first portion of the plurality of fins and a dielectric trench formed in the dielectric layer.
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035871 
new patent

Lateral/vertical semiconductor device


A lateral semiconductor device and/or design including a space-charge generating layer and a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel..
Sensor Electronic Technology, Inc.


02/04/16
20160035869 
new patent

Semiconductor device


A semiconductor device formed on a substrate of a first conductivity type, including a base layer of a second conductivity disposed on a first face of the substrate, an anode layer with a higher dopant amount in a portion of the base layer, an igbt region formed on the base layer, a diode region formed on the anode layer, a trench extending from the top of the igbt and diode regions in to the substrate. The area occupied by the diode region is different from the area occupied by the igbt region, but they share collector and emitter electrodes.
Kabushiki Kaisha Toshiba


02/04/16
20160035868 
new patent

Semiconductor device and semiconductor device manufacturing method


A semiconductor device and manufacturing method achieve miniaturization, prevent rise in threshold voltage and on-state voltage, and prevent decrease in breakdown resistance. N+-type emitter region and p++-type contact region are repeatedly alternately disposed in a first direction in which a trench extends in stripe form in a mesa portion sandwiched between trench gates.
Fuji Electric Co., Ltd.


02/04/16
20160035866 
new patent

Semiconductor device and manufacturing method thereof


An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and electric characteristics are stabilized. Another object is to provide a method for manufacturing the thin film transistor.
Semiconductor Energy Laboratory Co., Ltd.


02/04/16
20160035865 
new patent

Method of manufacturing semiconductor device


A first conductor is formed over a substrate. A first insulator is formed over the first conductor.
Semiconductor Energy Laboratory Co., Ltd.


02/04/16
20160035863 
new patent

Methods of forming stressed channel regions for a finfet semiconductor device and the resulting device


An illustrative method includes forming a finfet device above structure comprising a semiconductor substrate, a first epi semiconductor material and a second epi semiconductor material that includes forming an initial fin structure that comprises portions of the semiconductor substrate, the first epi material and the second epi material, recessing a layer of insulating material such that a portion, but not all, of the second epi material portion of the initial fin structure is exposed so as to define a final fin structure, forming a gate structure above and around the final fin structure, removing the first epi material of the initial fin structure and thereby define an under-fin cavity under the final fin structure and substantially filling the under-fin cavity with a stressed material.. .
International Business Machines Corporation


02/04/16
20160035861 
new patent

Methods of manufacturing semiconductor devices


In a method of manufacturing a semiconductor device, a dummy gate structure is formed on a substrate. A first spacer layer is formed on the substrate to cover the dummy gate structure.

02/04/16
20160035858 
new patent

Finfet having highly doped source and drain regions


A method of forming a semiconductor device that includes forming an in-situ doped semiconductor material on a semiconductor substrate, and forming fin structures from the in-situ doped semiconductor material. A sacrificial channel portion of the fin structures may be removed, wherein a source region and a drain region portion of the fin structures of the in-situ doped semiconductor material remain.
International Business Machines Corporation


02/04/16
20160035857 
new patent

Extended contact area using undercut silicide extensions


The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a contact silicide on a source-drain (s-d) region of a field effect transistor (fet) having extensions by using an undercut etch and a salicide process. A method of forming a contact silicide extension is disclosed.
International Business Machines Corporation


02/04/16
20160035854 
new patent

Method for fabricating semiconductor device


A method for fabricating metal gate transistor is disclosed. The method includes the steps of: providing a substrate having a nmos region and a pmos region; forming a dummy gate on each of the nmos region and the pmos region respectively; removing the dummy gates from each of the nmos region and the pmos region; forming a n-type work function layer on the nmos region and the pmos region; removing the n-type work function layer in the pmos region; forming a p-type work function layer on the nmos region and the pmos region; and depositing a low resistance metal layer on the p-type work function layer of the nmos region and the pmos region..
United Microelectronics Corp.


02/04/16
20160035853 
new patent

Semiconductor device


In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion.
Panasonic Intellectual Property Management Co., Ltd.


02/04/16
20160035851 
new patent

Epitaxial metallic transition metal nitride layers for compound semiconductor devices


A method for integrating epitaxial, metallic transition metal nitride (tmn) layers within a compound semiconductor device structure. The tmn layers have a similar crystal structure to relevant semiconductors of interest such as silicon carbide (sic) and the group iii-nitrides (iii-ns) such as gallium nitride (gan), aluminum nitride (aln), indium nitride (inn), and their various alloys.

02/04/16
20160035850 
new patent

Semiconductor device and manufacturing method


A semiconductor device includes a trench extending into a semiconductor body from a first surface. At least one of a ternary carbide and a ternary nitride is in the trench..
Infineon Technologies Ag


02/04/16
20160035849 
new patent

Strained channel of gate-all-around transistor


The disclosure relates to a semiconductor device. An exemplary structure for a nanowire structure comprises a first semiconductor material having a first lattice constant and a first linear thermal expansion constant; and a second semiconductor material having a second lattice constant and a second linear thermal expansion constant surrounding the first semiconductor material, wherein a ratio of the first lattice constant to the second lattice constant is from 0.98 to 1.02, wherein a ratio of the first linear thermal expansion constant to the second linear thermal expansion constant is greater than 1.2 or less than 0.8..
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035845 
new patent

Vertical semiconductor device having semiconductor mesas with side walls and a pn-junction extending between the side walls


A vertical semiconductor device includes a semiconductor body having a backside and extending, in a peripheral area and in a vertical direction substantially perpendicular to the backside, from the backside to a first surface of the semiconductor body, the body including in an active area spaced apart semiconductor mesas extending, in the vertical direction, from the first surface to a main surface arranged above the first surface, in a vertical cross-section the peripheral area extending between the active area and an edge that extends between the back-side and the first surface, in the vertical cross-section each of the mesas including first and second side walls, a first pn-junction extending between the first and second side walls, and a conductive region in ohmic contact with the mesa and extending from the main surface into the mesa. Gate electrodes are arranged between adjacent mesas and extend across the first pn-junctions..
Infineon Technologies Ag


02/04/16
20160035844 
new patent

Semiconductor device and manufacturing the same


A semiconductor device with enhanced reliability in which a gate electrode for a trench-gate field effect transistor is formed through a gate insulating film in a trench made in a semiconductor substrate. The upper surface of the gate electrode is in a lower position than the upper surface of the semiconductor substrate in an area adjacent to the trench.
Renesas Electronics Corporation


02/04/16
20160035842 
new patent

Semiconductor device including a trench at least partially filled with a conductive material in a semiconductor substrate and manufacturing a semiconductor device


A semiconductor device includes a semiconductor substrate and a first trench extending into or through the semiconductor substrate from a first side. The first trench is at least partially filled with a conductive material and electrically connected to the semiconductor substrate via a doped semiconductor layer at a sidewall of the first trench.
Infineon Technologies Austria Ag


02/04/16
20160035840 
new patent

Semiconductor device


According to one embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer provided in a portion on the first semiconductor layer, a first insulating layer provided on the first semiconductor layer on a terminal region side of the second semiconductor layer, a third semiconductor layer provided on the first semiconductor layer on the terminal region side of the first insulating layer, a second insulating layer provided on the first semiconductor layer on the terminal region side of the third semiconductor layer, a fourth semiconductor layer provided between the first semiconductor layer and the second insulating layer, and a plurality of field plate electrodes provided inside an inter-layer insulating film, the plurality of field plate electrodes having mutually-different distances from the first semiconductor layer.. .
Kabushiki Kaisha Toshiba


02/04/16
20160035839 
new patent

Compound semiconductor stack and semiconductor device


There is provided a compound semiconductor stack including a substrate (101) of which electrical resistance is greater than or equal to 1×105 Ωcm, a first compound semiconductor layer (102) which is formed on the substrate (101), and contains in and sb doped with carbon, and a second compound semiconductor layer (103) which is formed on the first compound semiconductor layer (102), has a carbon concentration less than a carbon concentration of the first compound semiconductor layer (102), and contains in and sb. A film thickness of the first compound semiconductor layer (102) is greater than or equal to 0.005 μm and less than or equal to 0.2 μm.
National Institute Of Advanced Industrial Science And Technology


02/04/16
20160035836 
new patent

Silicon carbide power bipolar devices with deep acceptor doping


In a general aspect, a power semiconductor device can include a collector region disposed on a substrate, the collector region can include n-type silicon carbide (sic). The power semiconductor device can also include a base region disposed on the collector region.
Fairchild Semiconductor Corporation


02/04/16
20160035835 
new patent

Smart semiconductor switch


A semiconductor device comprises semiconductor substrate including vertical transistor and with dopants of a first type. Each transistor cell of transistor has body region formed in substrate and with dopants of second type.
Infineon Technologies Ag


02/04/16
20160035834 
new patent

Smart semiconductor switch


A semiconductor device comprises a semiconductor substrate doped with dopants of a first type and a vertical transistor composed of one or more transistor cells. Each transistor cell has a first region formed in the substrate and doped with dopants of a second type, and the first regions form first pn-junctions with the surrounding substrate.
Infineon Technologies Ag


02/04/16
20160035833 
new patent

Trap rich layer for semiconductor devices


An integrated circuit chip is formed with an active layer and a trap rich layer. The active layer is formed with an active device layer and a metal interconnect layer.
Silanna Semiconductor U.s.a., Inc.


02/04/16
20160035828 
new patent

Compound semiconductor device, producing same, and resin-sealed type semiconductor device


In a semiconductor element having a compound semiconductor layer epitaxially grown on a silicon substrate, an object is to suppress generation of deficiency or problems of reliability deriving from the ends of the element that are generated when dividing into semiconductor devices by dicing. A compound semiconductor layer epitaxially grown on a silicon substrate is formed via a buffer layer made of aluminum nitride.
Panasonic Intellectual Property Management Co., Ltd.


02/04/16
20160035827 
new patent

Fin structure of semiconductor device


A semiconductor device and method of formation are provided herein. A semiconductor device includes a fin having a first wall extending along a first plane, the fin including a doped region defining a first furrow on a first side of the first plane.
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035826 
new patent

Semiconductor device and related manufacturing method


A method for manufacturing a semiconductor device may include forming a semiconductor portion, forming a doped portion, and forming a dielectric member. A side of the dielectric member abuts each of the semiconductor portion and the doped portion.
Semiconductor Manufacturing International (shanghai) Corporation


02/04/16
20160035825 
new patent

Super junction semiconductor device and manufacturing the same


There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions..
Magnachip Semiconductor, Ltd.


02/04/16
20160035824 
new patent

Semiconductor device, manufacturing the same, and power module


A semiconductor device includes an n-type drain layer, an n-type base layer provided on the n-type drain layer, a p-type base layer and an n-type source layer partially formed in surface layer portions of the n-type base layer and the p-type base layer, respectively, a gate insulation film formed on a surface of the p-type base layer between the n-type source layer and the n-type base layer, a gate electrode formed on the gate insulation film facing the p-type base layer across the gate insulation film, a p-type column layer formed within the n-type base layer to extend from the p-type base layer toward the n-type drain layer, a depletion layer alleviation region arranged between the p-type column layer and the n-type drain layer and including first baryons converted to donors, a source electrode connected to the n-type source layer, and a drain electrode connected to the n-type drain layer.. .
Rohm Co., Ltd.


02/04/16
20160035823 
new patent

Semiconductor device


A semiconductor device includes a substrate, a gate positioned on the substrate, a drain region and a source region formed in the substrate at two respectively sides of the gate, a first well region formed in the substrate, and a plurality of first doped islands formed in the source region. The drain region and the source region include a first conductivity, and the first well region and the first doped islands include a second conductivity.
United Microelectronics Corp.


02/04/16
20160035822 
new patent

High voltage semiconductor devices and methods for their fabrication


Semiconductor devices include: (a) a semiconductor substrate containing a source region and a drain region; (b) a gate structure supported by the semiconductor substrate between the source region and the drain region; (c) a composite drift region in the semiconductor substrate, the composite drift region extending laterally from the drain region to at least an edge of the gate structure, the composite drift region including dopant having a first conductivity type, wherein at least a portion of the dopant is buried beneath the drain region at a depth exceeding an ion implantation range; and (d) a well region in the semiconductor substrate, wherein the well region has a second conductivity type and wherein the well region is configured to form a channel therein under the gate structure during operation of the semiconductor device. Methods for the fabrication of semiconductor devices are described..
Freescale Semiconductor, Inc.


02/04/16
20160035821 
new patent

Power semiconductor device


A semiconductor device includes an active region and a semiconductor substrate layer having a lower part semiconductor layer of a second conductivity type. The active region includes a drift region formed by at least a part of the substrate layer, a body region of the second conductivity type formed on at least a part of the drift region, a source region of a first conductivity type disposed in the body region, and a first doped region of the first conductivity type at least partially disposed under the body region.
Infineon Technologies Ag


02/04/16
20160035790 
new patent

Semiconductor device and producing semiconductor device


The present invention provides a memory structure including a resistance-changing storage element, which enables a reset operation with a reset gate and in which cross-sectional areas of a resistance-changing film and a lower electrode in a current-flowing direction can be decreased. The semiconductor device of the present invention comprises a first pillar-shaped semiconductor layer, a gate insulating film formed around the first pillar-shaped semiconductor layer, a gate electrode made of a metal and formed around the gate insulating film, a gate line made of a metal and connected to the gate electrode, a second gate insulating film formed around an upper portion of the first pillar-shaped semiconductor layer, a first contact made of a second metal and formed around the second gate insulating film, a second contact which is made of a third metal and which connects an upper portion of the first contact to an upper portion of the first pillar-shaped semiconductor layer, a second diffusion layer formed in a lower portion of the first pillar-shaped semiconductor layer, a pillar-shaped insulating layer formed on the second contact, a resistance-changing film formed around an upper portion of the pillar-shaped insulating layer, a lower electrode formed around a lower portion of the pillar-shaped insulating layer and connected to the resistance-changing film, a reset gate insulating film that surrounds the resistance-changing film, and a reset gate that surrounds the reset gate insulating film..
Unisantis Electronics Singapore Pte. Ltd.


02/04/16
20160035789 
new patent

Method of manufacturing semiconductor device and semiconductor device having unequal pitch vertical channel transistors


A semiconductor device comprises a set of selection transistors, such as in a three-dimensional memory structure or stack having resistance change memory cells arranged along vertical bit lines. Each selection transistor has a non-shared control gate and a shared control gate.
Sandisk 3d Llc


02/04/16
20160035788 
new patent

Methods of manufacturing semiconductor devices


Active patterns spaced apart from each other by an isolation layer are formed in a substrate. Gate structures extending in the isolation layer through the active patterns are formed.
Samsung Electronics Co., Ltd.


02/04/16
20160035787 
new patent

Method of manufacturing semiconductor device


A method of manufacturing a semiconductor device includes a step of vacuum packing a sawn wafer while being housed in a shipping case. The shipping case has the following structure.

02/04/16
20160035786 
new patent

Method of fabricating a semiconductor device


There is provided a method of fabricating a semiconductor device, including grinding a first surface of a first semiconductor layer to generate a damage layer in a surface region of the first surface of the first semiconductor layer, polishing the damage layer to remove a portion with predetermined thickness of the damage layer; and etching the damage layer and the first semiconductor layer to remove the first semiconductor layer from a third surface of a second semiconductor layer, the third surface contacting to a second surface opposed to the first surface in the first semiconductor layer.. .
Kabushiki Kaisha Toshiba


02/04/16
20160035777 
new patent

Semiconductor device and manufacturing method


A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.. .
Sony Corporation


02/04/16
20160035773 
new patent

Semiconductor image sensors having channel stop regions and methods of fabricating the same


A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.. .
Samsung Electronics Co., Ltd.


02/04/16
20160035771 
new patent

Image sensor device and method


A system and method for blocking heat from reaching an image sensor in a three dimensional stack with a semiconductor device. In an embodiment a heat sink is formed in a back end of line process either on the semiconductor device or else on the image sensor itself when the image sensor is in a backside illuminated configuration.
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035766 
new patent

Semiconductor device and manufacturing method thereof


A semiconductor device such as, for example an imaging sensor, includes a semiconductor layer in which, for example, a photodiode may be formed. An insulation film is disposed on a surface of the semiconductor layer.
Kabushiki Kaisha Toshiba


02/04/16
20160035758 
new patent

Semiconductor device and manufacturing the same


A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer.
Semiconductor Energy Laboratory Co., Ltd.


02/04/16
20160035757 
new patent

Semiconductor device


A semiconductor device capable of maintaining data during instantaneous power reduction or interruption. The semiconductor device includes first to sixth transistors.
Semiconductor Energy Laboratory Co., Ltd.


02/04/16
20160035754 
new patent

Semiconductor device, manufacturing method thereof, and display apparatus


Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.. .
Samsung Display Co., Ltd.


02/04/16
20160035742 
new patent

Spacer passivation for high-aspect ratio opening film removal and cleaning


A method of making a semiconductor device includes forming a stack of alternating layers of a first material and a second material over a substrate, etching the stack to form at least one opening in the stack such that a damaged region is located on a bottom surface of the at least one opening, forming a masking layer on a sidewall of the at least one opening while the bottom surface of the at least one opening is not covered by the masking layer, and further etching the bottom surface of the at least one opening remove the damaged region.. .
Sandisk Technologies Inc.


02/04/16
20160035739 
new patent

Semiconductor device and a manufacturing method thereof


The performances of a semiconductor device are improved. The semiconductor device has a first control gate electrode and a second control gate electrode spaced along the gate length direction, a first cap insulation film formed over the first control gate electrode, and a second cap insulation film formed over the second control gate electrode.
Renesas Electronics Corporation


02/04/16
20160035734 
new patent

Method for manufacturing a semiconductor device


The performances of a semiconductor device are improved. In a method for manufacturing a semiconductor device, in a memory cell region, a control gate electrode formed of a first conductive film is formed over the main surface of a semiconductor substrate.
Renesas Electronics Corporation


02/04/16
20160035732 
new patent

Three-dimensional non-volatile memory device


A semiconductor device includes at least one first conductive layer stacked on a substrate where a cell region and a contact region are defined; at least one first slit passing through the first conductive layer, second conductive layers stacked on the first conductive layer; a second slit passing through the first and second conductive layers and connected with one side of the first slit, and a third slit passing through the first and second conductive layers and connected with the other side of the first slit.. .
Sk Hynix Inc.


02/04/16
20160035731 
new patent

Semiconductor devices and methods of manufacturing semiconductor devices


A method of manufacturing a semiconductor device includes forming an isolation pattern on a substrate to define active patterns each having a first contact region at a center portion thereof and second and third contact regions at edge portions thereof. The method further includes forming a buried gate structure at upper portions of the isolation pattern and the active patterns, forming a first insulation layer on the isolation pattern and the active patterns, and etching a portion of the first insulation layer and an upper portion of the first contact region to form a preliminary opening exposing the first contact region.
Samsung Electronics Co., Ltd.


02/04/16
20160035730 
new patent

Semiconductor device


A semiconductor device according to this invention includes a support film that supports a lower electrode of a capacitor at an upper portion, and the support film includes a first insulating material having a stress within a range of +700 mpa to −700 mpa. Use of such a support film prevents a phenomenon in which the capacitor lower electrode is twisted.
Ps4 Luxco S.a.r.l.


02/04/16
20160035728 
new patent

Retrograde doped layer for device isolation


Embodiments herein provide device isolation in a complimentary metal-oxide fin field effect transistor. Specifically, a semiconductor device is formed with a retrograde doped layer over a substrate to minimize a source to drain punch-through leakage.
Globalfoundries Inc.


02/04/16
20160035722 
new patent

Semiconductor devices and structures


An integrated circuit device, including: a first layer including first transistors; and a second layer including second transistors overlaying the first layer, where the first transistors are facing down and the second transistors are facing up, and where the second layer includes a through layer via of less than 300 nm diameter.. .
Monolithic 3d Inc.


02/04/16
20160035721 
new patent

Common drain semiconductor device structure and method


In one embodiment, a common drain semiconductor device includes a substrate, having two transistors integrated therein. The substrate also includes a plurality of active regions on a major surface of the substrate.
Semiconductor Components Industries, Llc


02/04/16
20160035719 
new patent

Semiconductor device and manufacturing the same


Both a hemt and a sbd are formed on a nitride semiconductor substrate. The nitride semiconductor substrate comprises a hemt gate structure region and an anode electrode region.
Toyota Jidosha Kabushiki Kaisha


02/04/16
20160035715 
new patent

System for designing a semiconductor device, device made, and using the system


A semiconductor device includes an edge active cell, an inner active cell and a middle active cell. The edge active cell is located near an edge of the semiconductor device.
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035714 
new patent

Semiconductor device


A semiconductor device includes a plurality of bit lines that intersect an active region on a substrate and extend in a first direction, a contact pad formed on the active region between adjacent bit lines, and a plurality of spacers disposed on sidewalls of the plurality of bit lines. An upper portion of the contact pad is interposed between adjacent spacers, and a lower portion of the contact pad has a width greater than a distance between adjacent spacers..
Samsung Electronics Co., Ltd.


02/04/16
20160035713 
new patent

Semiconductor element and semiconductor device


A semiconductor device includes a voltage generation circuit configured to generate a specific voltage; a first terminal configured to output the specific voltage; a second terminal configured to receive a temperature sensitive voltage; an analog/digital conversion circuit configured to convert the specific voltage and the temperature sensitive voltage to digital values; a storage unit configured to store the specific voltage and the temperature sensitive voltage; and a third terminal configured to transmit the specific voltage and the temperature sensitive voltage to an external semiconductor device.. .
Lapis Semiconductor Co., Ltd.


02/04/16
20160035706 
new patent

Semiconductor device for battery power voltage control


A voltage generated in any of a plurality of semiconductor chips is supplied to another chip as a power supply voltage to realize a stable operation of a semiconductor device in which the semiconductor chips are stacked in the same package. For example, two chips are stacked with each other, first to third pads are disposed along corresponding sides of the respective chips, which are arranged close and in parallel to each other, and these pads are commonly connected to each other with first to third metal wires, respectively.
Renesas Electronics Corporation


02/04/16
20160035705 
new patent

Semiconductor device and manufacturing method therefor


A chip laminate in this semiconductor device has a structure consisting of a first semiconductor chip and a second semiconductor chip laminated together. The first semiconductor chip has a circuit-forming layer and a first bump electrode formed on one surface and a second bump electrode formed on the other surface.
Ps4 Luxco S.a.r.l.


02/04/16
20160035701 
new patent

Semiconductor tsv device package for circuit board connection


An electronic device includes a circuit board and a semiconductor device package. The semiconductor device package includes a laminate layer.
International Business Machines Corporation


02/04/16
20160035695 
new patent

Method of manufacturing semiconductor device


A semiconductor device includes a common wire that sequentially connects three or more pads; bonding portions at which a side surface of the wire is bonded to the pads; and looping portions looped from the bonding portions onto the other pads adjacent to the pads, the bonding portions and the looping portions are formed alternately. When the pads are recessed from the surface of semiconductor chips, the common wire is crushed to a thickness greater than the recess depth of the pads to be made into a flat shape.
Shinkawa Ltd.


02/04/16
20160035693 
new patent

Semiconductor tsv device package for circuit board connection


An electronic device includes a circuit board and a semiconductor device package. The semiconductor device package includes a laminate layer.
International Business Machines Corporation


02/04/16
20160035691 
new patent

Semiconductor device and fabricating same


A semiconductor device includes, an alloy layer sandwiched between a first ag layer formed on a mounting board or circuit board and a second ag layer formed on a semiconductor element, wherein the alloy layer contains an intermetallic compound of ag3sn formed by ag components of the first ag layer and the second ag layer and sn, and wherein a plurality of wires containing ag are arranged extended from an outside-facing periphery of the alloy layer.. .
Mitsubishi Electric Corporation


02/04/16
20160035690 
new patent

Semiconductor device and manufacturing semiconductor device


A solder joint layer has a structure in which plural fine-grained second crystal sections (22) precipitate at crystal grain boundaries between first crystal sections (21) dispersed in a matrix. The first crystal sections (21) are sn crystal grains containing tin and antimony in a predetermined proportion.
Fuji Electric Co., Ltd.


02/04/16
20160035683 
new patent

Semiconductor device


A highly reliable semiconductor device capable of heavy current conduction and high temperature operation has a module structure in which a semiconductor chip and a circuit pattern are electrically connected via a wire. A front surface metal film is formed on a front surface electrode of the chip, and the wire is bonded to the front surface metal film by wire bonding.
Fuji Electric Co., Ltd.


02/04/16
20160035681 
new patent

Semiconductor device structures inlcuding a distributed bragg reflector


A method of forming a semiconductor device structure comprises forming at least one reflective structure comprising at least two dielectric materials having different refractive indices over at least one radiation-sensitive structure, the at least one reflective structure configured to substantially reflect therefrom radiation within a predetermined wavelength range and to substantially transmit therethrough radiation within a different predetermined wavelength range. Additional methods of forming a semiconductor device structure are described.
Micron Technology, Inc.


02/04/16
20160035680 
new patent

Semiconductor package with conformal em shielding structure and manufacturing same


A semiconductor package includes a substrate having a front side, a bottom side, and a sidewall along a perimeter of the substrate, a plurality of solder pads on the bottom side, at least one em shielding contact structure on the bottom side and partially exposed on the sidewall, a semiconductor device mounted on the front side, a mold compound on the front side and covering the semiconductor device, and an em shielding layer conformally covering the mold compound and the sidewall. The em shielding layer is in direct contact with the exposed portion of the em shielding contact structure on the sidewall..
Cyntec Co., Ltd.


02/04/16
20160035676 
new patent

Semiconductor devices and methods of fabricating the same


Semiconductor devices may include a substrate including an active region defined by a device isolation layer, source/drain regions in the active region, word lines extending in a first direction parallel to the active region and being arranged in a second direction crossing the first direction, a bit line pattern extending in the second direction and crossing over a portion of the active region positioned between the word lines, and a graphene pattern covering at least a portion of the bit line pattern.. .
Samsung Electronics Co., Ltd.


02/04/16
20160035673 
new patent

Semiconductor device having a fuse element


A portion-to-be-melted of a fuse is surrounded by plates, so that heat to be generated in a meltdown portion of the fuse under current supply can be confined or accumulated in the vicinity of the meltdown portion of the fuse. This makes it possible to facilitate meltdown of the fuse.
Renesas Electronics Corporation


02/04/16
20160035672 
new patent

Semiconductor device and manufacturing the same


A coil cl1 is formed on a semiconductor substrate sb via a first insulation film, a second insulation film is formed so as to cover the first insulation film and the coil cl1, and a pad pd1 is formed on the second insulation film. A laminated film lf having an opening op1 from which the pad pd1 is partially exposed is formed on the second insulation film, and a coil cl2 is formed on the laminated insulation film.
Renesas Electronics Corporation


02/04/16
20160035670 
new patent

Semiconductor device packages, packaging methods, and packaged semiconductor devices


semiconductor device packages, packaging methods, and packaged semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes a back side interconnect structure, and a winding of an inductor disposed in a material layer of the back side interconnect structure.
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035669 
new patent

Routing paths and semiconductor devices including the same


A semiconductor device may include a global line coupled to a source, and a plurality of local lines coupled to a plurality of targets, respectively, and coupled to the global line. The local lines may be configured to have cross-sectional areas.
Sk Hynix Inc.


02/04/16
20160035667 
new patent

Methods of packaging semiconductor devices and packaged semiconductor devices


Methods of packaging semiconductor devices and packaged semiconductor devices are disclosed. In some embodiments, a method of packaging a semiconductor device includes providing a protective film, coupling dies to the protective film, and disposing a molding material around the dies.
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035662 
new patent

Semiconductor devices with close-packed via structures having in-plane routing and making same


The invention relates to a semiconductor structure, comprising a substrate of a semiconductor material having a first side (fs) and an opposite second side (bs). There is at least one conductive wafer-through via (v) comprising metal, and at least one recess (rdl) provided in the first side of the substrate and in the semiconductor material of the substrate.
Silex Microsystems Ab


02/04/16
20160035657 
new patent

Semiconductor device and semiconductor module


According to one embodiment, a semiconductor device includes a first base portion, a second base portion, a third base portion, and a semiconductor element. A first end portion of the first base portion is positioned closer to a side on which the semiconductor element is provided than a second end portion of the first base portion.
Kabushiki Kaisha Toshiba


02/04/16
20160035655 
new patent

Semiconductor package having etched foil capacitor integrated into leadframe


A packaged semiconductor device including a leadframe and a plurality of angularly shaped capacitors. The leadframe includes structures with surfaces and sidewalls.
Texas Instruments Incorporated


02/04/16
20160035654 
new patent

Source down semiconductor devices and methods of formation thereof


A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side.
Infineon Technologies Ag


02/04/16
20160035653 
new patent

Mcsp power semiconductor devices and preparation methods thereof


The present invention discloses the mcsp power semiconductor device and the preparation method thereof. In the present invention method, a metal foil layer is attached to the back of the wafer using a conductive adhesive layer and a composite tape is laminated on the metal foil layer.
Alpha And Omega Semiconductor Incorporated


02/04/16
20160035651 
new patent

Leadless semiconductor package and method


A method of forming semiconductor devices on a leadframe structure. The leadframe structure comprising an array of leadframe sub-structures each having a semiconductor die arranged thereon.
Nxp B.v.


02/04/16
20160035649 
new patent

Semiconductor devices with optical through via structures, memory cards including the same, and electronic systems including the same


A semiconductor device is provided. The semiconductor device may include a substrate and a through via structure penetrating the substrate.
Sk Hynix Inc.


02/04/16
20160035647 
new patent

Semiconductor device having heat dissipation structure and laminate of semiconductor devices


A semiconductor device includes a semiconductor substrate, an electrode arranged on a first surface of the semiconductor substrate, a circuit formed on a second surface, of the semiconductor substrate, on an opposite side from the first surface, a conductor connecting the circuit and the electrode, a first lead arranged on an outer periphery of the semiconductor substrate, a connection member connecting the electrode and the first lead, and a sealing material sealing the semiconductor substrate, the first lead, and the connection member, where the second surface of the semiconductor substrate is exposed from the sealing material.. .
Panasonic Corporation


02/04/16
20160035646 
new patent

Semiconductor device, assembling semiconductor device, semiconductor device component, and unit module


A semiconductor device includes an insulating substrate; a semiconductor element mounted on the insulating substrate; and a radiation block bonded to the semiconductor element. The radiation block includes a three-dimensional radiation portion and a base portion connected to the radiation portion.
Fuji Electric Co., Ltd.


02/04/16
20160035643 
new patent

Semiconductor device and manufacturing the same


Aspects of the invention include a semiconductor device that enables both solder-outflow prevention and inhibition of seizures coming from laser processing residues. A semiconductor device can include a semiconductor chip, a plurality of insulating substrates on each of which the semiconductor chip is fixed, a heat sink having a plurality of first grooves surrounding each one of more than one predetermined arrangement area.
Fuji Electric Co., Ltd.


02/04/16
20160035641 
new patent

Semiconductor device including passivation layer encapsulant


A method of fabricating a semiconductor device includes forming a passivation layer on a least one capping layer of the semiconductor device, and forming an encapsulant layer on the passivation layer. The method further includes patterning the encapsulant layer to expose a portion of the passivation layer and forming a final via opening in the passivation layer.
Globalfoundries Inc.


02/04/16
20160035640 
new patent

Underfill film, sealing sheet, manufacturing semiconductor device, and semiconductor device


The present invention provides an underfill film and a sealing sheet that are excellent in thermal conductive property and are capable of satisfactorily filling the space between the semiconductor element and the substrate. The present invention relates to an underfill film having a resin and a thermally conductive filler, in which a content of the thermally conductive filler is 50% by volume or more, an average particle size of the thermally conductive filler is 30% or less of a thickness of the underfill film, and a maximum particle size of the thermally conductive filler is 80% or less of the thickness of the underfill film..
Nitto Denko Corporation


02/04/16
20160035639 
new patent

Semiconductor device and manufacturing the same


A semiconductor device and a method of manufacturing the semiconductor device are disclosed. The semiconductor device includes a chip substrate, a mold, and a buffer layer.
Taiwan Semiconductor Manufacturing Company Ltd.


02/04/16
20160035638 
new patent

Support base-attached encapsulant, encapsulated substrate having semiconductor devices mounted thereon, encapsulated wafer having semiconductor devices formed thereon, semiconductor apparatus, and manufacturing semiconductor apparatus


Support base-attached encapsulant for collectively encapsulating a semiconductor device mounting surface of a substrate or semiconductor device forming surface of a wafer, containing a support base having one fibrous film or a plurality of the fibrous films being laminated, the fibrous film subjected to surface treatment with an organosilicon compound, and a resin layer of thermosetting resin formed on one surface of the support base. The support base-attached encapsulant inhibit the substrate or wafer from warping and semiconductor devices from peeling away from the substrate, and collectively encapsulate the semiconductor device mounting surface of the substrate or the semiconductor device forming surface of the wafer even when a large-diameter wafer or large-area substrate is encapsulated.
Shin-etsu Chemical Co., Ltd.


02/04/16
20160035637 
new patent

Semiconductor device and manufacturing semiconductor device


A semiconductor device includes: a substrate; a semiconductor element disposed on the substrate; a plurality of electrodes disposed on the substrate separately from one another and arranged so as to surround the semiconductor element in a plan view; a lid that cover the semiconductor element, the lid including an inner portion and a periphery portion that is outer than the inner portion in a plan view, the lid including a plurality of first protruding members that is provided separately from one another, the first protruding members being disposed in the inner portion; and conductive members disposed between the plurality of electrodes and the plurality of protruding members disposed in positions opposed to the plurality of electrodes respectively, the conductive members being joined to the plurality of electrodes and the plurality of protruding members respectively.. .
Socionext Inc.


02/04/16
20160035636 
new patent

Manufacturing semiconductor device


Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip.
Renesas Electronics Corporation


02/04/16
20160035632 
new patent

Semiconductor tsv device package to which other semiconductor device package can be later attached


A first package includes a laminate layer, an overmold layer above and in direct contact with the laminate layer, and a logic circuit-through-silicon via (tsv) layer including a first logic die and tsvs. The logic circuit-tsv layer is within the overmold layer, and the tsvs are electrically exposed at a top surface of the overmold layer.
International Business Machines Corporation


02/04/16
20160035627 
new patent

High performance cmos device design


A semiconductor device includes a gate, which comprises a gate electrode and a gate dielectric underlying the gate electrode, a spacer formed on a sidewall of the gate electrode and the gate dielectric, a buffer layer having a first portion underlying the gate dielectric and the spacer and a second portion adjacent the spacer wherein the top surface of the second portion of the buffer layer is recessed below the top surface of the first portion of the buffer layer, and a source/drain region substantially aligned with the spacer. The buffer layer preferably has a greater lattice constant than an underlying semiconductor substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035624 
new patent

Semiconductor device manufacturing method and semiconductor device thereof


According to one embodiment, a semiconductor device manufacturing method provides filling a through-hole which penetrates through a first side of substrate to a second side thereof. A seed film including copper is formed on the inner wall surface of the through-hole.
Kabushiki Kaisha Toshiba


02/04/16
20160035623 
new patent

Integrated circuits having device contacts and methods for fabricating the same


Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes providing a semiconductor device with a metal silicide electrically coupled thereto.
Globalfoundries Singapore Pte. Ltd.


02/04/16
20160035620 
new patent

Method for forming seed layer on high-aspect ratio via and semiconductor device having high-aspect ratio via formed thereby


Disclosed are a method of forming a seed layer on a high-aspect ratio via and a semiconductor device having a high-aspect ratio via formed thereby. Thus, efficient cu filling-plating is possible, and plating adhesion of the seed layer to filling-plated cu can be simply and profitably enhanced, thus imparting high durability upon forming metal wiring for electronic components.
Korea Institute Of Industrial Technology


02/04/16
20160035617 
new patent

Overlay marks, methods of forming the same, and methods of fabricating semiconductor devices using the same


In a method of fabricating a semiconductor device, a substrate including a circuit area and an overlay mark area is provided. Conductive gate patterns are formed on the substrate in the circuit area such that the overlay mark area is free of the gate patterns, and conductive contact patterns are formed on the substrate between the gate patterns in the circuit area.

02/04/16
20160035615 
new patent

Methods of manufacturing a semiconductor device


Methods of manufacturing a semiconductor device are described. In an embodiment, the method may include providing a substrate having a metal layer disposed thereon, the metal layer having a conductive trace pattern formed therein; depositing a dielectric material over the conductive trace pattern of the metal layer; determining a layout of a plurality of air gaps that will be formed in the dielectric material based on a design rule checking (drc) procedure and the conductive trace pattern; and forming the plurality of air gaps in the dielectric material based on the layout of the plurality of air gaps..
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035612 
new patent

Temporary bonding laminates for used in manufacture of semiconductor devices and methods for manufacturing semiconductor devices


Provided is temporary bonding laminates for used in a manufacture of semiconductor devices, by which a member to be processed (a semiconductor wafer or the like) can be temporarily supported securely and readily during a mechanical or chemical process of the member to be processed and then the processed member can be readily released from the temporary support without damaging the processed member even after a high temperature process, and processes for manufacturing semiconductor devices. The temporary bonding laminate includes (a) a release layer and (b) an adhesive layer, wherein the release layer (a) comprises (a1) a first release layer having a softening point of 200° c.
Fujifilm Corporation


02/04/16
20160035589 
new patent

Semiconductor device, related manufacturing method, and related electronic device


A method for manufacturing semiconductor device may include the following steps: performing an etching process to remove a sacrificial layer from a first composite structure, wherein the first composite structure includes a first substrate structure; performing a heat treatment to release a gas from the first composite structure; performing a cleaning process to remove an oxide layer from the first composite structure; and combining the first composite structure with a second composite structure that includes a second substrate structure and an electronic component positioned on the second substrate substructure, such that the first substrate structure is combined with the second substrate structure to form an enclosure structure that encloses the electronic component.. .
Semiconductor Manufacturing International (shanghai) Corporation


02/04/16
20160035578 
new patent

Method of forming a semiconductor device including a pitch multiplication


Disclosed herein is a manufacturing method of a semiconductor device that includes forming first and second layers over an underlying martial such that the first layer is between the underlying material and the second layer, forming a third layer over the second layer, forming first and second core portions apart from each other over the third layer, forming a gap portion between the first and the second core portions; and removing the second and the third layers by using the first and the second core portions and the gap portion as a mask to expose a part of the first layer.. .
Micron Technology, Inc.


02/04/16
20160035576 
new patent

Split-gate semiconductor device with l-shaped gate


A semiconductor device having a substrate, a dielectric layer over the substrate, a first gate conductor, an inter-gate dielectric structure and a second gate conductor is disclosed. A gate dielectric structure is disposed between the first gate conductor and the dielectric layer, and may include two or more dielectric films disposed in an alternating manner.
Cypress Semiconductor Corporation


02/04/16
20160035575 
new patent

Methods of forming a semiconductor device


The present disclosure relates to methods for forming a high-k gate dielectric, the methods comprising the steps of providing a semiconductor substrate, cleaning the substrate, performing a thermal treatment, and performing a high-k dielectric material deposition, wherein said thermal treatment step is performed in a non-oxidizing ambient, leading to the formation of a thin interfacial layer between said semiconductor substrate and said high-k dielectric material and wherein the thickness of said thin interfacial layer is less than 10 Å.. .
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035571 
new patent

Lithography using high selectivity spacers for pitch reduction


A method embodiment for patterning a semiconductor device includes patterning a dummy layer over a hard mask to form one or more dummy lines. A sidewall aligned spacer is conformably formed over the one or more dummy lines and the hard mask.
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035567 
new patent

Semiconductor device


A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween.
Semiconductor Energy Laboratory Co., Ltd.


02/04/16
20160035560 
new patent

Carrier system for processing semiconductor substrates, and methods thereof


In accordance with an alternative embodiment of the present invention, a method for forming a semiconductor device includes applying a paste over a semiconductor substrate, and forming a ceramic carrier by solidifying the paste. The semiconductor substrate is thinned using the ceramic carrier as a carrier..
Infineon Technologies Ag


02/04/16
20160035538 
new patent

Pattern shape evaluation method, semiconductor device manufacturing method, and pattern shape evaluation device


A cross-sectional shape or a three-dimensional shape of a circuit pattern is estimated and evaluated only from a planar image of the circuit pattern observed from the above of a wafer. The present invention includes a process of obtaining an observation image of an upper surface of a solid structure, by causing the upper surface of a substrate to be irradiated and scanned with a converged energy beam from a direction substantially perpendicular to a main surface of the substrate having the structure formed on the upper surface thereof, and detecting and/or measuring intensities of a secondary energy beam generated in the substrate and the structure or an energy beam reflected or scattered from the substrate or the structure, a process of obtaining uncertainty information regarding an intensity of scattering caused by an irregular shape of a surface of the structure, from an irradiation position of the converged energy beam in the observation image of the upper surface and the measured intensity, a process of obtaining an inclination angle θ of the surface of the structure, based on the obtained uncertainty information; and a process of estimating a solid shape of the structure, based on the obtained inclination angle θ..
Hitachi High-technologies Corporation


02/04/16
20160035405 
new patent

Semiconductor device capable of reducing power consumption


According to one embodiment, a semiconductor device includes a first transistor of a first conductivity type, and a first logical circuit. The first transistor of the first conductivity type is connected between a first node to which a power supply voltage is applied and a second node.
Kabushiki Kaisha Toshiba


02/04/16
20160035396 
new patent

Semiconductor device


According to an embodiment, a semiconductor device includes a plurality of wiring patterns of wiring lines disposed in parallel in a line-and-space pattern in a predetermined pitch and extend in a first direction in a first region, first bending patterns that extend pairs of the wiring lines in a second in a second region adjacent to the first region, second bending patterns extend the pairs of wiring lines in opposite directions along the orientation of the first direction in the second region, and dummy patterns separated from the two second bending patterns at a predetermined distance.. .
Kabushiki Kaisha Toshiba






Follow us on Twitter
twitter icon@FreshPatents

###

This listing is a sample listing of patent applications related to Semiconductor Device for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Semiconductor Device with additional patents listed. Browse our RSS directory or Search for other possible listings.


1.9223

8530

468976 - 0 - 151