FreshPatents.com Logo
Enter keywords:  

Track companies' patents here: Public Companies RSS Feeds | RSS Feed Home Page
Popular terms

[SEARCH]

Follow us on Twitter
twitter icon@FreshPatents

Web & Computing
Cloud Computing
Ecommerce
Search patents
Smartphone patents
Social Media patents
Video patents
Website patents
Web Server
Android patents
Copyright patents
Database patents
Programming patents
Wearable Computing
Webcam patents

Web Companies
Apple patents
Google patents
Adobe patents
Ebay patents
Oracle patents
Yahoo patents

[SEARCH]

Semiconductor Device patents



      
           
This page is updated frequently with new Semiconductor Device-related patent applications. Subscribe to the Semiconductor Device RSS feed to automatically get the update: related Semiconductor RSS feeds. RSS updates for this page: Semiconductor Device RSS RSS


Method of manufacturing semiconductor device

Manufacturing method of mis-type semiconductor device

Method for forming fine patterns of semiconductor device using directed self-assembly process

Date/App# patent app List of recent Semiconductor Device-related patents
09/25/14
20140289538
 Semiconductor device patent thumbnailnew patent Semiconductor device
A semiconductor device in related art has a problem that security on confidential information stored is insufficient. A semiconductor device of the present invention has a unique code which is unique to a device and generates unique code corresponding information from the unique code.
09/25/14
20140289461
 Information processing system including semiconductor device having self-refresh mode patent thumbnailnew patent Information processing system including semiconductor device having self-refresh mode
Disclosed herein is an information processing system having first and second devices. The second device alternately issues a self-refresh command and a self-refresh exit command to the first device.
09/25/14
20140288912
 Semiconductor device simulator, simulation method, and non-transitory computer readable medium patent thumbnailnew patent Semiconductor device simulator, simulation method, and non-transitory computer readable medium
A web simulator includes a sensor database, an account database that stores access authorization table, an authentication processing unit that specifies access authorization of an access by reference to the access authorization table, a sensor registration and update unit that registers/updates sensor information in the sensor database in accordance with an instruction of access, and a simulation execution unit that executes simulation of a connection circuit in which a sensor indicated by the registered/updated sensor information and a semiconductor device having an analog front-end circuit are connected.. .
09/25/14
20140287605
 Semiconductor device patent thumbnailnew patent Semiconductor device
According to one embodiment, a semiconductor device includes a case, a connector, and a cap. The case includes a first main surface, a second main surface opposite to the first main surface, a first concave portion provided with at least one of the first main surface and the second main surface, and a semiconductor memory housed inside.
09/25/14
20140287599
 Substrate processing apparatus, process container, and method of manufacturing semiconductor device patent thumbnailnew patent Substrate processing apparatus, process container, and method of manufacturing semiconductor device
Provided are a substrate processing apparatus, a process container and a method of manufacturing a semiconductor device capable of improving the quality of a thin film by stabilizing conditions of heating a substrate when the thin film is formed on the substrate heated using a heating unit installed outside the process container. The substrate processing apparatus includes a process container in which processing to a substrate is performed; a heating unit disposed outside the process container and configured to emit a radiant heat so as to heat the substrate in the process container; and a source gas supply system configured to supply a source gas into the process container, wherein the process container includes a heat absorbing layer disposed on at least a portion of an outer wall of the process container and configured to absorb the radiant heat and cause a saturation of absorption of the radiant heat..
09/25/14
20140287598
 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium patent thumbnailnew patent Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device includes forming an oxide film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas to the substrate; and supplying an ozone gas to the substrate.
09/25/14
20140287597
 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium patent thumbnailnew patent Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen and having a borazine ring skeleton on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first precursor gas containing the predetermined element and a halogen group to the substrate; supplying a second precursor gas containing the predetermined element and an amino group to the substrate; supplying a reaction gas including an organic borazine compound to the substrate; and supplying a carbon-containing gas to the substrate.
09/25/14
20140287596
 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium patent thumbnailnew patent Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an si—c bonding, and a first catalytic gas to the substrate; and supplying an oxidizing gas and a second catalytic gas to the substrate.. .
09/25/14
20140287595
 Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium patent thumbnailnew patent Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium
A thin film having excellent etching resistance and a low dielectric constant is described. A method of manufacturing a semiconductor device includes forming a thin film on a substrate, removing first impurities containing h2o and cl from the thin film by heating the thin film at a first temperature higher than a temperature of the substrate in the forming of the thin film, and removing second impurities containing a hydrocarbon compound (cxhy-based impurities) from the thin film in which heat treatment is performed at the first temperature by heating the thin film at a second temperature equal to or higher than the first temperature..
09/25/14
20140287594
 Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium patent thumbnailnew patent Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
A cleaning method includes (a) providing a process chamber after forming an oxide film on a substrate in the process chamber formed by a reaction tube and a manifold supporting the reaction tube by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate through a first nozzle in the manifold extending upward to an inside of the reaction tube, and supplying an oxidizing gas to the substrate through a second nozzle in the manifold extending upward to the inside of the reaction tube; and (b) cleaning an inside of the process chamber. The step (b) includes a first cleaning process of supplying a hydrogen fluoride gas into the reaction tube through the second nozzle; and a second cleaning process of supplying a hydrogen fluoride gas onto an inner wall surface of the manifold through a third nozzle disposed in the manifold..
09/25/14
20140287587
new patent Method for forming fine patterns of semiconductor device using directed self-assembly process
Provided herein is a method for forming fine patterns of semiconductor devices capable of forming patterns with 20 nm-level line width without bulk-exposure and hardening of guide patterns. Method steps include (a) forming a photoresist layer over a wafer on which an organic anti-reflection coating layer is formed; (b) exposing and developing the photoresist layer to form guide patterns; (c) forming a neutral layer over the wafer; (d) developing the guide patterns to remove them and form neutral layer patterns having an opening part; (e) coating block copolymer of directed self assembly material on the substrate and heating the substrate over a glass transition temperature (tg) to form directed self-assembly patterns; and (f) selectively etching a part having relatively small etching resistivity (or high etching rate) among the directed self-assembly patterns by using o2 plasma to form fine patterns..
09/25/14
20140287586
new patent Method of manufacturing semiconductor device
According to one embodiment, a manufacturing method of a semiconductor device comprises forming a to-be-processed film includes a convex potion and concave potion on its surface on a semiconductor substrate via layers having a relative dielectric constant smaller than that of sio2, planarizing the surface of the to-be-processed film, and etching the planarized surface of the to-be-processed film.. .
09/25/14
20140287578
new patent Electroplating methods for fabricating integrated circuit devices and devices fabricated thereby
Provided are methods of fabricating a semiconductor device and semiconductor devices fabricated thereby. In the methods, dummy recess regions may be formed between cell recess regions and a peripheral circuit region.
09/25/14
20140287577
new patent Methods for producing interconnects in semiconductor devices
A method for producing interconnects on a workpiece includes obtaining a workpiece substrate having a feature, depositing a conductive layer in the feature, to partially or fully fill the feature, depositing a copper fill to completely fill the feature if the feature is partially filled by the conductive layer, applying a copper overburden, thermally treating the workpiece, and removing the overburden to expose the substrate and the metalized feature.. .
09/25/14
20140287576
new patent Semiconductor device manufacturing method and semiconductor device
According to one embodiment, a semiconductor device manufacturing method includes: forming a film to be a first metal layer on a substrate where an element portion is formed; forming a first insulating layer provided with an opening on the film to be the first metal layer; forming a second metal layer in the opening of the first insulating layer; eliminating the first insulating layer; eliminating the film to be the first metal layer with the second metal layer used as a mask so as to form the first metal layer; and forming an electrode portion by covering exposed surfaces of the first metal layer and the second metal layer with a third metal layer including a metal of a smaller ionization tendency than the metal of the second metal layer.. .
09/25/14
20140287574
new patent Method of manufacturing semiconductor device having field plate electrode
According to one embodiment, in a method of a semiconductor device, a trench is formed in the direction of a lower surface from an upper surface of a semiconductor layer. A first insulating film is formed to cover an inner surface of the trench.
09/25/14
20140287573
new patent Semiconductor device manufacturing method
A semiconductor device manufacturing method includes (a) forming a buried diffusion layer of a first conductivity type in a semiconductor substrate of a second conductivity type, (b) forming a first impurity region by implanting an impurity of the first conductivity type, (c) diffusing the buried diffusion layer and the first impurity region to an extent that the buried diffusion layer and the first impurity region are not connected by performing a first thermal process on the semiconductor substrate, (d) forming a second impurity region by implanting an impurity of the first conductivity type at a concentration higher than that of in step (b), and (e) diffusing the buried diffusion layer, the first impurity region, and the second impurity region by performing a second thermal process on the semiconductor substrate.. .
09/25/14
20140287572
new patent Manufacturing method of mis-type semiconductor device
A manufacturing method of mis (metal insulator semiconductor)-type semiconductor device includes the steps of; forming a zirconium oxynitride (zron) layer; forming an electrode layer containing titanium nitride (tin) on the zirconium oxynitride (zron) layer; and heating the electrode layer.. .
09/25/14
20140287569
new patent Method of manufacturing semiconductor device
According to one embodiment, a method includes forming a first sige layer having a first profile of a concentration of ge on a semiconductor substrate, forming a second sige layer having a second profile of a concentration of ge on the first sige layer, the second profile lower than a first peak of the first profile, forming a mask layer on the second sige layer, etching the first and second sige layers by anisotropic etching using the mask layer as a mask to form trenches, selectively removing the first sige layer exposed into the trenches to form a cavity under the second sige layer, and oxidizing side and lower surfaces of the second sige layer exposed in the trenches and the cavity to increase the concentration of ge in the second sige layer.. .
09/25/14
20140287568
new patent Method for manufacturing semiconductor device and exposure mask used in the same method
A method for manufacturing a semiconductor device is disclosed in which the probability of occurrence of a crack is reduced and in which manufacturing cost is also reduced. An exposure mask used in the method is disclosed.
09/25/14
20140287567
new patent Manufacturing method for semiconductor device
According to one embodiment, a first adhesive layer is formed on one major surface of a first substrate. The first substrate and a second substrate are adhered using a second adhesive layer that has thermosetting properties and covers the first adhesive layer, wherein a bonding strength between the second substrate is greater than a bonding strength between the second substrate and the first adhesive layer.
09/25/14
20140287564
new patent Semiconductor devices having shallow junctions
Semiconductor devices are provided including a substrate having a first surface and a second surface recessed from opposite sides of the first surface, a gate pattern formed on the first surface and having a gate insulating layer and a gate electrode, a carbon-doped silicon buffer layer formed on the second surface, and source and drain regions doped with an n-type dopant or p-type dopant, epitaxially grown on the silicon buffer layer to be elevated from a top surface of the gate insulating layer.. .
09/25/14
20140287563
new patent Method of manufacturing semiconductor device
An aspect of the present embodiment, there is provided a method of manufacturing a semiconductor device, including adsorbing a photolytic group on a hydrophilic surface of a substrate on which a concave portion is provided, irradiating a first area of the substrate with light to transform the photolytic group to a hydrophobic group to modify a surface of the first area, selectively coating a resist on a second area which is a portion of the substrate other than the first area modified by hydrophobic group.. .
09/25/14
20140287562
new patent Method of fabricating a semiconductor device
There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode.
09/25/14
20140287561
new patent Method for fabricating semiconductor device
A method for fabricating a semiconductor device is disclosed in the present invention. The abovementioned method comprises the following steps.
09/25/14
20140287560
new patent Integrated semiconductor device having an insulating structure and a manufacturing method
An integrated semiconductor device is provided. The integrated semiconductor device has a first semiconductor region of a second conductivity type, a second semiconductor region of a first conductivity type forming a pn-junction with the first semiconductor region, a non-monocrystalline semiconductor layer of the first conductivity type arranged on the second semiconductor region, a first well and at least one second well of the first conductivity type arranged on the non-monocrystalline semiconductor layer and an insulating structure insulating the first well from the at least one second well and the non-monocrystalline semiconductor layer.
09/25/14
20140287559
new patent Semiconductor device and method for manufacturing same
A semiconductor device includes: an n−-type base layer; a p-type base layer formed in a part of a front surface portion of the n−-type base layer; an n+-type source layer formed in a part of a front surface portion of the p-type base layer; a gate insulating film formed on the front surface of the p-type base layer between the n+-type source layer and the n−-type base layer; a gate electrode that faces the p-type base layer through the gate insulating film; a p-type column layer formed continuously from the p-type base layer in the n−-type base layer; a p+-type collector layer formed in a part of a rear surface portion of the n−-type base layer; a source electrode electrically connected to the n+-type source layer; and a drain electrode electrically connected to the n−-type base layer and to the p+-type collector layer.. .
09/25/14
20140287557
new patent Semiconductor device
In a semiconductor device including a semiconductor element and a wiring substrate on which the semiconductor element is mounted. The wiring substrate includes an insulating substrate and conductive wiring formed in the insulating substrate and electrically connected to the semiconductor element.
09/25/14
20140287556
new patent Methods of forming bump and semiconductor device with the same
Provided are methods of forming a bump and a semiconductor device with the same. The method may include providing a substrate with pads, forming a bump maker layer to cover the pads and include a resin and solder particles, thermally treating the bump maker layer to aggregate the solder particles onto the pads, removing the resin to expose the aggregated solder particles, forming a resin layer to cover the aggregated solder particles, and reflowing the aggregated solder particles to form bumps on the pads..
09/25/14
20140287555
new patent Semiconductor device including semiconductor construct installed on base plate, and manufacturing method of the same
A semiconductor device includes a semiconductor construct including a semiconductor substrate and an external connection electrode provided to protrude on a surface of the semiconductor substrate, a base plate on which the semiconductor construct is installed, and a sealing layer stacked on the semiconductor substrate except for the external connection electrode and on the base plate including a side surface of the semiconductor substrate.. .
09/25/14
20140287554
new patent Method for plating a semiconductor package lead
A method of forming a packaged semiconductor device includes loading an array of package sites in position for saw singulation, saw singulating the array of package sites, and performing a non-electrolytic plating operation on exposed lead tips of individual packages from the array of package sites as the array of package sites is saw singulated.. .
09/25/14
20140287552
new patent Method for processing thin film and method for manufacturing semiconductor device
A stable and minute processing method of a thin film is provided. Further, a miniaturized semiconductor device is provided.
09/25/14
20140287541
new patent Semiconductor chip and semiconductor device
When a memory chip is mounted over a logic chip, a recognition range including a recognition mark formed at a back surface of the logic chip is imaged and a shape of the recognition range is recognized, alignment of a plurality of bumps of the logic chip and a plurality of projection electrodes of the above-described memory chip is performed based on a result of the recognition, and the above-described memory chip is mounted over the logic chip. At this time, the shape of the recognition range is different from any portion of an array shape of the bumps, as a result, the recognition mark in the shape of the recognition range can be reliably recognized, and alignment of the bumps of the logic chip and the projection electrodes of the above-described memory chip is performed with high accuracy..
09/25/14
20140287375
new patent Insulation structure and method of manufacturing semiconductor device
A heat insulation structure, which has a cylindrical side wall part formed in a multilayer structure, includes: a cooling gas supply port provided in an upper portion of a side wall outer layer disposed in an outer side of the side wall part; a cooling gas passage provided between a side wall inner layer disposed in an inner side of the side wall part and the side wall outer layer; a space provided in an inner side of the side wall inner layer; a plurality of blowout holes provided in the side wall inner layer for distributing cooling gas from the cooling gas passage to the space; a buffer area continuously provided in the cooling gas supply port and the cooling gas passage; and a throttle part configured to reduce a cross-sectional area of a boundary surface between the buffer area and the cooling gas passage.. .
09/25/14
20140287350
new patent Exposure tolerance estimation method and method for manufacturing semiconductor device
According to one embodiment, an exposure tolerance estimation method is disclosed. The method can include setting a plurality of regions along a first surface of a substrate.


Popular terms: [SEARCH]



Follow us on Twitter
twitter icon@FreshPatents

###

This listing is a sample listing of patent applications related to Semiconductor Device for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Semiconductor Device with additional patents listed. Browse our RSS directory or Search for other possible listings.
     SHARE
  
         


FreshNews promo



0.1633

4373

0 - 1 - 78