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Semiconductor Circuit patents

      

This page is updated frequently with new Semiconductor Circuit-related patent applications.




 Direct bandgap substrates and methods of making and using patent thumbnailDirect bandgap substrates and methods of making and using
An indirect bandgap thin film semiconductor circuit can be combined with a compound semiconductor led such as to provide an active matrix led array that can have high luminous capabilities such as for a light projector application. In another example, a highly efficient optical detector is achievable through the combination of indirect and direct bandgap semiconductors.
The Trustees Of Columbia University In The City Of New York


 Circuit design system and semiconductor circuit designed by using the system patent thumbnailCircuit design system and semiconductor circuit designed by using the system
A system and method may determine the operating parameters, such as voltages, of mos transistors within a circuit design by testing or simulation, for example and may identify a mos transistor operating with its drain voltage higher than its gate voltage in the circuit. The design system and method may substitute a smaller transistor, having a high-k dielectric layer, for the original transistor in the circuit design..

 Semiconductor circuit device, oscillator, electronic apparatus, and moving object patent thumbnailSemiconductor circuit device, oscillator, electronic apparatus, and moving object
A semiconductor circuit device includes an oscillation circuit, an output circuit that receives a signal output from an oscillation circuit and outputs an oscillation signal, a temperature sensing element, a characteristic adjustment circuit that adjusts characteristics of the oscillation circuit on the basis of a signal output from the temperature sensing element, and a first connection terminal that is electrically connected to the output circuit and via which the oscillation signal is output, in which a distance between the output circuit and the first connection terminal is shorter than a distance between the temperature sensing element and the first connection terminal in a plan view.. .
Seiko Epson Corporation


 Semiconductor circuit device, oscillator, electronic apparatus, and moving object patent thumbnailSemiconductor circuit device, oscillator, electronic apparatus, and moving object
A semiconductor circuit device includes an oscillation circuit, an output circuit that outputs a signal output from the oscillation circuit, a temperature sensing element, a characteristic adjustment circuit that adjusts characteristics of the oscillation circuit on the basis of a signal output from the temperature sensing element, a first wiring via which power is supplied to the output circuit, and a second wiring via which a reference voltage is supplied to the output circuit in which at least one of the first wiring and the second wiring overlaps the temperature sensing element in a plan view.. .
Seiko Epson Corporation


 Circuit arrangement having charge storage units patent thumbnailCircuit arrangement having charge storage units
A circuit arrangement includes a power semiconductor circuit, a first charge storage unit and a second charge storage unit. The first charge storage unit has first and second terminals, the second charge storage unit has first and second terminals, and the power semiconductor circuit has first and second terminals.
Infineon Technologies Ag


 Lead-free solder, lead-free solder ball, solder joint using the lead-free solder and semiconductor circuit having the solder joint patent thumbnailLead-free solder, lead-free solder ball, solder joint using the lead-free solder and semiconductor circuit having the solder joint
Lead-free solder is characterized in that the lead-free solder contains ag of 1.2 mass % through 4.5 mass %, cu of 0.25 mass % through 0.75 mass %, bi of 1 mass % through 5.8 mass %, ni of 0.01 mass % through 0.15 mass % and sn as the remainder. These addition amounts allow to be further improved the common solder properties such as wettability, shear strength properties and the like, in addition to the thermal fatigue resistance..
Senju Metal Industry Co., Ltd.


 Bypass  converter patent thumbnailBypass converter
The present invention provides an apparatus for bypassing a phase current from a malfunctioning sub module in a converter. The converter includes multiple sub modules each having an energy storage unit, and at least one power semiconductor circuit which is connected in parallel to the energy storage unit and which includes a power semiconductor switch and free-wheeling diodes, wherein the sub modules are connected in series to each other.
Hyosung Corppration


 Methods, systems, and computer program products for generating semiconductor circuit layouts patent thumbnailMethods, systems, and computer program products for generating semiconductor circuit layouts
A method of generating electronic circuit layout data can include electronically providing data representing a first standard cell layout including a first scaling enhanced circuit layout in an electronic storage medium. The first scaling enhanced circuit layout included in the first standard cell layout can be electronically defined using a marker layer.

 Semiconductor circuit, voltage detection circuit, and voltage determination circuit patent thumbnailSemiconductor circuit, voltage detection circuit, and voltage determination circuit
The present disclosure provides a semiconductor circuit including: a pmos transistor that includes a first source connected to a power supply, a first drain, and a first gate to which a fixed potential is supplied; an output circuit that outputs a first output signal, which is a reset signal or a power-on signal, and that outputs a second output signal according to a potential of the first drain; a constant current source connected to the first drain; and an nmos transistor that includes a second source to which a fixed potential is supplied, a second drain connected to the first drain, and a second gate to which the second output signal from the output circuit is applied.. .
Lapis Semiconductor Co., Ltd.


 Battery monitoring system, semiconductor circuit, line-breakage detection program, and line-breakage detection method patent thumbnailBattery monitoring system, semiconductor circuit, line-breakage detection program, and line-breakage detection method
The present invention appropriately detects line-breakages in a signal line related to a battery connected to a discharge circuit for discharging. Namely, an initialization operation produces a state in which a capacitor (c1) is charged with the difference between the voltage of a signal line (vn) and a self-threshold voltage (vx), and a capacitor (c2) is charged with the difference between the voltage of a signal line (vn−1) and a self-threshold voltage (vx), in a comparison circuit (26).
Yazaki Corporation


Assembled-battery system, semiconductor circuit, and diagnostic method


This invention provides an assembled-battery system, a semiconductor circuit, and a diagnostic method that enable appropriate self-diagnosis of a measuring unit. Namely, an output value (a-b) output from an analog-to-digital converter through power-supply lines, a cell-selection switch, and a level shifter is summed with an output value (b-vss) obtained by a directly input reference voltage b being output from the analog-to-digital converter, and when the summed value is considered equal the reference voltage a—the voltage vss, it is diagnosed that an abnormality such as a breakdown has not occurred..
Lapis Semiconductor Co., Ltd.


Semiconductor device


A partition in lattice form forms a plurality of housing sections. A plurality of circuit blocks including a semiconductor block and a terminal base block are electrically connected one to another in a state of being housed in the housing sections to form a power semiconductor circuit.
Mitsubishi Electric Corporation


Semiconductor circuit, driving circuit of electro-optical device, and electronic apparatus


A semiconductor circuit includes a first circuit block, a second circuit block, and power wiring lines that supply a plurality of reference potentials. The first circuit block and the second circuit block are connected to a common power wiring line that is one of the power wiring lines and supplies a common reference potential.
Epson Imaging Devices Corporation


Methods of forming a semiconductor circuit element and semiconductor circuit element


The present disclosure provides methods of forming a semiconductor circuit element and a semiconductor circuit element, wherein the semiconductor circuit element includes a first semiconductor device with a first gate structure disposed over a first active region of a semiconductor substrate and a second semiconductor device with a second gate structure disposed over a second active region of the semiconductor substrate, the first gate structure comprising a ferroelectric material buried into the first active region before a gate electrode material is formed on the ferroelectric material and the second gate structure comprising a high-k material different from the ferroelectric material.. .

Magnetoresistive sensor module and manufacturing the same


In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement..

Power semiconductor drive circuit, power semiconductor circuit, and power module circuit device


A power semiconductor drive circuit includes a parallel circuit connected to a gate of a power semiconductor element and constituted by two transistors for setting gate resistance of the power semiconductor element; a gate voltage monitoring circuit connected to the gate of the power semiconductor element and the parallel circuit, wherein a monitoring voltage is set in the gate voltage monitoring circuit to monitor a gate voltage of the power semiconductor element; a signal delay circuit to delay an output signal of the gate voltage monitoring circuit; and a gate control circuit to change the magnitude of combined resistance of the parallel circuit based on an output signal output from the signal delay circuit.. .

Semiconductor memory device having pads


A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region.

Gate-power-supply device and semiconductor circuit breaker using same


A gate-power-supply device is provided with an inverter circuit, a transformer, and rectifier circuits. The device includes secondary-side parallel capacitors, connected in parallel to secondary-side coils of the transformer, for cancelling inductance components of the secondary-side coils at the drive frequency of the inverter circuit.
Mitsubishi Electric Corporation


Semiconductor circuit, oscillator, electronic apparatus, and moving object


A semiconductor circuit includes an oscillation circuit; an output circuit that receives a first oscillation signal from the oscillation circuit and outputs a second oscillation signal; a dc circuit that receives a voltage based on a power supply voltage and outputs at least one of a dc voltage and a dc current; and a semiconductor substrate on which the oscillation circuit, the output circuit, and the dc circuit are formed. In a plan view of the semiconductor substrate, the dc circuit is disposed between the oscillation circuit and the output circuit..
Seiko Epson Corporation


Semiconductor device and manufacturing thereof


A semiconductor device includes a substrate having a top surface. A semiconductor circuit defines a circuit area on the top surface of the substrate.
Intel Deutschland Gmbh


Semiconductor device and manufacturing the same


A connection portion connects a copper-based first wiring layer with a copper-based second wiring layer arranged on the upper side of a first diffusion barrier film. The first diffusion barrier film includes a first opening region formed in a semiconductor circuit region that is a partial region in a two-dimensional view and a second opening region formed as an opening region different from the first opening region in a two-dimensional view.
Renesas Electronics Corporation


Optical module


An optical module includes a circuit board, a photoelectric conversion element mounted on the circuit board, an optical connector for optically connecting the photoelectric conversion element and an optical fiber, a semiconductor circuit element mounted on the circuit board and electrically connected to the photoelectric conversion element, a pressing member for pressing and fixing the optical connector to the circuit board, and a supporting member for supporting the pressing member. The supporting member includes a heat-absorbing surface and a heat-dissipating surface.
Hitachi Metals, Ltd.


Integrated circuit device including polycrystalline semiconductor film and manufacturing the same


An ic device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal.

Physical quantity sensor, pressure sensor, altimeter, electronic apparatus, and moving object


A physical quantity sensor includes a semiconductor substrate, a diaphragm section that is disposed on the semiconductor substrate and is flexurally deformed when receiving pressure, a sensor element that is disposed on the diaphragm section, an element-periphery structure member that is disposed on one surface side of the semiconductor substrate and forms a cavity section together with the diaphragm section, and a semiconductor circuit that is provided on the same surface side as the element-periphery structure member of the semiconductor substrate.. .
Seiko Epson Corporation


Method of forming a semiconductor circuit element and semiconductor circuit element


The present disclosure provides a method of forming a semiconductor circuit element and a semiconductor circuit element, wherein the semiconductor circuit element is formed on the basis of a replacement gate process replacing a dummy gate structure of a semiconductor device of the semiconductor circuit element by a gate oxide structure and a gate electrode material, wherein the gate oxide structure comprises a high-k material that is in the ferroelectric phase. In some illustrative embodiments herein, a semiconductor device is provided, the semiconductor device having a gate structure disposed over an active region of a semiconductor substrate.
Globalfoundries Inc.


Simulation system estimating self-heating characteristic of circuit and design method thereof


A method of designing a semiconductor circuit using a circuit simulation tool executed by a computer includes calculating power consumptions of elements of the semiconductor circuit by use of the circuit simulation tool. A thermal netlist is created about the semiconductor circuit, based on the power consumptions and geometry information of each of the elements.

Static discharge system


A semiconductor circuit includes a three-terminal high voltage semiconductor device, a charge distribution structure and a static discharge system. The charge distribution structure has a plurality of conductors with a floating potential.
Power Integrations, Inc.


Semiconductor circuit structure


A nand flash circuit structure includes two select gates disposed on a substrate, and an even number of spaced-apart word lines disposed between the two select gates. The select gate is provided with a first portion and a second portion.
Powerchip Technology Corporation


Semiconductor circuit device, electronic apparatus, and moving object


A semiconductor circuit device includes: a semiconductor circuit provided on a main surface of a semiconductor substrate; and a thin film circuit element including a conductive thin film and disposed on the main surface of the semiconductor substrate. The semiconductor circuit is provided between the thin film circuit element and a peripheral portion of the semiconductor substrate in a plan view..
Seiko Epson Corporation


Semiconductor device, drive device for semiconductor circuit, and power conversion device


A semiconductor device according to the present invention includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type adjacent to the first semiconductor layer and having an impurity concentration lower than the first semiconductor layer; a third semiconductor layer of a second conductivity type adjacent to the second semiconductor layer; a fourth semiconductor layer of the first conductivity type located within the third semiconductor layer; a first electrode coupled to the third semiconductor layer and the fourth semiconductor layer; a second electrode coupled to the first semiconductor layer; and an insulated gate provided over the respective surfaces of the third semiconductor layer and the fourth semiconductor layer, wherein peak value of the impurity concentration of the third semiconductor layer is in the range of 2×1016 cm−3 or more and 5×1018 cm−3 or less.. .
Hitachi, Ltd.


Semiconductor device, drive device for semiconductor circuit, and power conversion device


A semiconductor device according to the present invention includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type, which is adjacent to the first semiconductor layer and has an impurity concentration lower than the first semiconductor layer; a third semiconductor layer adjacent to the second semiconductor layer; a first electrode electrically coupled to the third semiconductor layer; a second electrode electrically coupled to the first semiconductor layer; and an insulated gate provided over the surface of the third semiconductor layer. Then, an end portion of the insulated gate is located at a position distant from the junction part between the second semiconductor layer and the third semiconductor layer within the surface of the third semiconductor layer..
Hitachi, Ltd.


Handle substrate, composite substrate for semiconductor, and semiconductor circuit board and manufacturing the same


It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina.
Ngk Insulators, Ltd.


Computer implemented performing extraction


A computer implemented method for performing extraction is provided in the present invention. First, a layout of a semiconductor circuit having a resistor is imported by using a computer wherein a device region is defined in the layout and the resistor is located within the device region.
United Microelectronics Corp.


Field-effect transistor, and memory and semiconductor circuit including the same


Provided is a field-effect transistor (fet) having small off-state current, which is used in a miniaturized semiconductor integrated circuit. The field-effect transistor includes a thin oxide semiconductor which is formed substantially perpendicular to an insulating surface and has a thickness of greater than or equal to 1 nm and less than or equal to 30 nm, a gate insulating film formed to cover the oxide semiconductor, and a strip-like gate which is formed to cover the gate insulating film and has a width of greater than or equal to 10 nm and less than or equal to 100 nm.
Semiconductor Energy Laboratory Co., Ltd.


Semiconductor device


A semiconductor device capable of, regardless of frequency, suppressing propagation of unnecessary signals to a semiconductor element or a semiconductor circuit through a semiconductor substrate, and of suppressing deterioration of signal quality of the semiconductor device caused by parasitic capacitive coupling. The semiconductor device is provided with a semiconductor substrate (100), a semiconductor element (105) which is provided on the surface portion of the semiconductor substrate (100) and which emits signals, a signal line (103) which is connected to the semiconductor element (105), and a polysilicon layer (102) which is provided between the semiconductor substrate (100) and the signal line (103)..
Panasonic Corporation


Modular multi-stage inverter comprising surge arrester


Electric power is transferred between an ac voltage grid and a dc voltage grid in the high-voltage range. Phase modules have at least one common dc voltage connection and separate ac voltage connections.
Siemens Aktiengesellschaft


Integrated circuit having electromagnetic shielding capability and manufacturing method thereof


The present invention discloses an integrated circuit having electromagnetic shielding capability and the manufacturing method thereof. An embodiment of the said integrated circuit comprises: a semiconductor circuit structure including a first surface which covers an electromagnetic radiation area; an electromagnetic shielding layer covering the first surface and including at least one contact; and at least one conducting path operable to electrically connect the at least one contact with a steady voltage and thereby shield off the electromagnetic wave from the electromagnetic radiation area, wherein the current running through the electromagnetic shielding layer is zero or less than the maximum current running through the electromagnetic radiation area..
Realtek Semiconductor Corporation


Semiconductor circuit and producing the semiconductor circuit


A power semiconductor circuit includes at least one semiconductor having at least one contact area, and at least one bonding conductor strip having at least one contact region fastened on at least one of the contact areas. The contact region of the bonding conductor strip includes cutouts..
Continental Automotive Gmbh


Integrated circuit assembly with cushion polymer layer


A method of forming an integrated circuit assembly includes forming an insulator layer on a preliminary semiconductor assembly. The preliminary semiconductor assembly includes a semiconductor substrate having a first side and a second side opposite the first side, a semiconductor circuitry layer formed on the first side of the semiconductor substrate, and a conductive via extending through the semiconductor substrate from the semiconductor circuitry layer to the second side.
Hitachi Chemcial Dupont Microsystems, L.l.c.


Converter for electric power


The present invention relates to a converter for electric power having multiple sub-modules connected in series, the sub-modules having an energy storage unit and multiple power semiconductor circuits connected in parallel to the energy storage unit, and which causes an electric current to bypass a sub-module in case the breakdown of the sub-module occurs. To this end, the converter for electric power according to the present invention has multiple sub-modules connected to each other in series, the sub-modules having an energy storage unit and at least one power semiconductor circuit that is connected in parallel to the energy storage unit and comprises multiple power semiconductor switches and freewheeling diodes, wherein each of the sub-modules comprises a bypass switching unit, which is connected in parallel to any one of said at least one power semiconductor circuit, and bypasses an electric current via the bypass switching unit..
Hyosung Corporation


Protective circuit for a current transformer and current transformer with a protection circuit


A protective circuit for a current transformer for preventing a secondary voltage on a secondary circuit of the current transformer from exceeding a secondary voltage threshold. A protective circuit input can be coupled to the secondary circuit of the current transformer such that the secondary voltage is applied to the protective circuit input.
Phoenix Contact Gmbh & Co. Kg


Semiconductor device and manufacturing the same


A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.. .
Kabushiki Kaisha Toshiba


Submodule for limiting a surge current


A submodule for a modular multistage converter contains a first and a second connection terminal, an energy store, and a power semiconductor circuit which is connected to the energy store such that the voltage dropping at the energy store can be generated at the connection terminals in a first switch state and a zero voltage can be generated at the connection terminals in a second switch state. The aim is to provide such a submodule which allows an inexpensive submodule housing to be used while maintaining the same energy storage capacity or which allows an increased energy storage capacity while using the same housing without thereby undermining the protection provided by the submodule housing.
Siemens Aktiengesellschaft


Lateral oxidation of nfet high-k gate stacks


A method for fabricating a semiconductor circuit includes obtaining a semiconductor structure having a gate stack of material layers including a high-k dielectric layer; oxidizing in a lateral manner the high-k dielectric layer, such that oxygen content of the high-k dielectric layer is increased first at the sidewalls of the high-k dielectric layer; and completing fabrication of a n-type field effect transistor from the gate stack after laterally oxidizing the high-k dielectric layer of the gate stack.. .
International Business Machines Corporation


Brake drive control device provided with abnormality detection function


A brake drive control circuit of a servo motor which detects malfunction of a semiconductor circuit at the brake drive control circuit, that is, a brake drive control circuit which connects two semiconductor circuits in series to a brake and uses a voltage detection circuit which detects the presence of voltage which is applied to the brake by brake signals turning the semiconductor circuits on/off so as to detect test pulses in the voltage which is applied to the brake due to test pulses which are included in the brake signals and turn the semiconductor circuits off for instants during an operation for disengaging the brake and detect malfunctions of the semiconductor circuits by the detection of the test pulses.. .
Fanuc Corporation


Fet transistor on a iii-v material structure with substrate transfer


A method of manufacturing a iii-v semiconductor circuit; the method comprising: forming a first layer of a iii-v material on a growth substrate; forming a second layer of a iii-v material on the first layer of iii-v material; forming a fet transistor having a source electrode and a drain electrode in contact with a top surface of the second layer of a iii-v material; forming a top dielectric layer above the fet transistor; forming a metal layer above the top dielectric layer, wherein said metal layer is connected to said source electrode; attaching a handle substrate to a top surface of the metal layer; removing the growth substrate from the bottom of the first layer of a iii-v material; and forming a bottom dielectric layer on the bottom of the first layer of a iii-v material.. .
Hrl Laboratories, Llc


Semiconductor circuit, semiconductor device and potential supply circuit


The present invention provides a semiconductor circuit including: a level shifter circuit that, in accordance with supply of a power supply voltage, converts a potential of an input signal from a first potential to a second potential that is higher than the first potential and outputs the second potential through an output node; a potential supply circuit, to which a reset signal at a level in accordance with the power supply voltage is supplied, that supplies a predetermined potential in accordance with the level of the reset signal; and a control circuit that controls the potential of the output node of the level shifter circuit in accordance with the level of the predetermined potential supplied from the potential supply circuit.. .
Lapis Semiconductor Co., Ltd.


Semiconductor circuit and amplifier circuit


An amplifier circuit outputs a control signal for controlling a control target circuit and receives input of a feedback signal from the control target circuit. The amplifier circuit and the control target circuit constitute a feedback loop that includes a plurality of poles.
Megachips Corporation


Integrated circuit assembly with cushion polymer layer


A method of forming an integrated circuit assembly includes forming an insulator layer on a preliminary semiconductor assembly. The preliminary semiconductor assembly includes a semiconductor substrate having a first side and a second side opposite the first side, a semiconductor circuitry layer formed on the first side of the semiconductor substrate, and a conductive via extending through the semiconductor substrate from the semiconductor circuitry layer to the second side.
International Business Machines Corporation


Methods of containing defects for non-silicon device engineering


An apparatus including a device including a channel material having a first lattice structure on a well of a well material having a matched lattice structure in a buffer material having a second lattice structure that is different than the first lattice structure. A method including forming a trench in a buffer material; forming an n-type well material in the trench, the n-type well material having a lattice structure that is different than a lattice structure of the buffer material; and forming an n-type transistor.
Intel Corporation


Mems device


A mems device includes a semiconductor substrate having a main surface with a first region in which a trench is formed and a second region in which an impurity diffusion region of a semiconductor circuit element is formed; a functional element provided, either directly or via an insulating film, on a bottom surface of the trench of the semiconductor substrate; a wall portion in the trench of the semiconductor substrate and forming a cavity surrounding the functional element; a lid portion that covers the cavity; and a pillar in the cavity and in contact with either the bottom surface of the trench of the semiconductor substrate or the insulating film, and with a back surface of the lid portion.. .
Seiko Epson Corporation


Mems device and manufacturing the same


A present mems device includes: a semiconductor substrate in which a trench is formed; a functional element that is provided in the trench of the semiconductor substrate and includes a connection electrode; a structural member that forms a cavity surrounding the functional element; a lid portion that includes a conductive member electrically connected to the connection electrode and covers the cavity; an insulating layer that covers the main surface of the semiconductor substrate provided with the lid portion and a semiconductor circuit element; a first electrode that penetrates the insulating layer and is electrically connected to the conductive member; a second electrode that penetrates the insulating layer and is electrically connected to the semiconductor circuit element; and wiring that is provided on a surface of the insulating layer and brings the first electrode and the second electrode into electrical connection to each other.. .
Seiko Epson Corporation


Semiconductor circuit


A semiconductor circuit includes: a first circuit configured to provide first voltage to an output node when a voltage level of an input node is at a first level; a second circuit configured to provide second voltage to the output node when the voltage level of the input node is at a second level; and a third circuit configured to provide third voltage to the output node when the second voltage is provided to the output node, where the second circuit is turned off when the third voltage is provided to the output node.. .
Samsung Electronics Co., Ltd.


Semiconductor circuit board, semiconductor device using the same, and manufacturing semiconductor circuit board


The present invention provides a semiconductor circuit board in which a conductor portion is provided on an insulating substrate, wherein a surface roughness of a semiconductor element-mounting section of the conductor portion is 0.3 μm or lower in arithmetic average roughness ra, 2.5 μm or lower in ten-point average roughness rzjis, 2.0 μm or smaller in maximum height rz, and 0.5 μm or lower in arithmetic average waviness wa. Further, assuming that a thickness of the insulating substrate is t1 and a thickness of the conductor portion is t2, the thickness of t1 and t2 satisfy a relation: 0.1≦t2/t1≦50.
Toshiba Materials Co., Ltd.


Semiconductor circuit using floating body device for emulating neuron firing process


The present invention provides a semiconductor circuit for emulating neuron firing process having a floating body device instead of the conventional capacitor. By using a floating body to store excess holes generated by impact ionization, it is possible to emulate signal accumulation of a neuron, trigger firing when the storage is in excess of a predetermined threshold value, and return to an original state after the firing..
Seoul National University R&db Foundation


Communication device, router having communication device, bus system, and circuit board of semiconductor circuit having bus system


A communication device includes: a receiving terminal; a storage device which stores a rule in which a condition regarding a bus system operation environment and an error tolerance scheme are associated with each other, and information regarding a path length; an error processor which determines the error tolerance scheme by utilizing the condition regarding the bus system operation environment and the rule so as to generate error tolerance information corresponding to the received data according to the determined error tolerance scheme; and a sending terminal for sending at least one packet including the error tolerance information and the data to the bus. The operation environment-related condition is a condition for granting an error tolerance for a transmission path of which a bus path length to another communication device, which is a destination of the data, is greater than a predetermined value..
Panasonic Intellectual Property Management Co., Ltd.


Core circuit test architecture


A scan test architecture facilitates low power testing of semiconductor circuits by selectively dividing the serial scan paths into shorter sections. Multiplexers between the sections control connecting the sections into longer or shorted paths.
Texas Instruments Incorporated


Stress mitigation for thin and thick films used in semiconductor circuitry


A semiconductor device is configured to reduce stress in one or more film layers in the device. According to one embodiment, the semiconductor device includes a substrate, a discontinuous dielectric layer on a first surface of the substrate, and a substantially continuous encapsulation layer over the first surface of the substrate and the discontinuous dielectric layer.
Cree, Inc.


Semiconductor circuit


A semiconductor circuit includes a clamp circuit and a switch circuit connected in series between a first power source terminal and a second power source terminal. The clamp circuit is configured to connect the first power source terminal to the second power source terminal when a voltage difference between the first and second power source terminals exceeds a threshold value.
Kabushiki Kaisha Toshiba


Semiconductor device, manufacturing semiconductor device and electronic thermoelectric power generation device


The invention relates to a semiconductor device, a method for manufacturing a semiconductor device and an electronic thermoelectric power generation device, a semiconductor device having a thermoelectric conversion element that is embedded in a semiconductor chip so as to be integrated with a semiconductor circuit can be implemented. A semiconductor substrate is provided with a through opening for a region in which a thermoelectric conversion element is to be formed, and a thermoelectric conversion element is embedded in the through opening, where the thermoelectric conversion element includes: a number of penetrating rods made of a thermoelectric conversion material; and an insulating reinforcement layer in which the penetrating rods are embedded and of which the thermal conductivity is lower than that of the thermoelectric conversion material..
Fujitsu Limited


Semiconductor circuit and operating the circuit


Provided is a semiconductor circuit which includes a first circuit configured to determine a voltage level of a feedback node based on a voltage level of input data, a voltage level of a latch input node, and a voltage level of a clock signal, a second circuit configured to pre-charge the latch input node based on the voltage level of the clock signal, a third circuit configured to pull down the latch input node based on the voltage level of the feedback node and the voltage level of the clock signal, a latch configured to output output data based on the voltage level of the clock signal and the voltage level of the latch input node, and a control circuit included in at least one of the first to third circuits and the latch and configured to receive the control signal.. .

Amplifier voltage limiting using punch-through effect


Disclosed herein are systems and method for voltage clamping in semiconductor circuits using through-silicon via (tsv) positioning. A semiconductor die is disclosed that includes a silicon substrate, a bipolar transistor having collector, emitter, base and sub-collector regions disposed on the substrate, and a through-silicon via (tsv) positioned within 35 μm of the sub-collector region in order to clamp a peak voltage of the bipolar transistor at a voltage limit level..
Skyworks Solutions, Inc.


Balancing asymmetric spacers


An issue arises when manufacturing semiconductor circuits including pfets with an sige alloy embedded in their source/drain regions and nfets without any embedded sige alloy. In this case, the thickness of the nfet spacers is considerably greater than that of the pfet spacers.
Globalfoundries Inc.


Bus system and computer program


A bus system (100) for a semiconductor circuit transmits data on a networked bus between a first node and at least one second node via a relay device (250) arranged on the bus. The bus system (100) includes a first bus of a low delay and a second bus of a high delay.
Panasonic Intellectual Property Management Co., Ltd.


Semiconductor circuit, driving the same, storage device, register circuit, display device, and electronic device


A semiconductor circuit capable of controlling and holding the threshold voltage of a transistor at an optimal level and a driving method thereof are disclosed. A storage device, a display device, or an electronic device including the semiconductor circuit is also provided.
Semiconductor Energy Laboratory Co., Ltd.


Semiconductor chip and electronic system including the same


A semiconductor chip includes a semiconductor circuit layer and a semiconductor thermoelectric layer disposed on a substrate. The circuit layer includes a first circuit and a second circuit disposed horizontally in a first direction.

Physical quantity sensor, pressure sensor, altimeter, electronic apparatus, and moving object


A physical quantity sensor includes a semiconductor substrate, a diaphragm section that is disposed on the semiconductor substrate and is flexurally deformed when receiving pressure, a sensor element that is disposed on the diaphragm section, an element-periphery structure member that is disposed on one surface side of the semiconductor substrate and forms a cavity section together with the diaphragm section, and a semiconductor circuit that is provided on the same surface side as the element-periphery structure member of the semiconductor substrate.. .
Seiko Epson Corporation


Semiconductor abnormality detection circuit


A semiconductor abnormality detection circuit includes a semiconductor circuit and a controller which controls supply of power to a load. The semiconductor circuit includes a switch device disposed between a power source and the load, and a sense signal generator generating a sense signal corresponding to a current flowing through the switch device.
Yazaki Corporation


Semiconductor circuit


There is a need to provide a technology that shortens a time period from a point to start an external power supply for a microcontroller to a point to start operating a logic circuit. A stable voltage supply circuit of a semiconductor circuit accepts an external power supply vcc and supplies a vdd line with one of a power supply voltage to cause a stable output voltage and a power supply voltage to cause an unstable output voltage and fast start.
Renesas Electronics Corporation


Electrode structure of solid type secondary battery


There is provided an electrode structure for preventing cracks occurring in a metal electrode due to heating in a manufacturing process in the case of stacking an insulating resin and the metal electrode which are different in thermal expansion coefficient. An electrode for a semiconductor circuit, stacked on a substrate made of an insulating resin, has an electrode structure composed of a main electrode including a slit formed by cutting out a part thereof to prevent occurrence of a crack in a manufacturing process caused by a difference in thermal expansion coefficient from the substrate, and an auxiliary electrode that covers the slit in the main electrode.
Kabushiki Kaisha Nihon Micronics


Ultra-thin structure to protect copper and preparation


Methods of depositing thin, low dielectric constant layers that are effective diffusion barriers on metal interconnects of semiconductor circuits are described. A self-assembled monolayer (sam) of molecules each having a head moiety and a tail moiety are deposited on the metal.
Applied Materials, Inc.


Manufacturing oscillator, manufacturing circuit device and the circuit device


A manufacturing method of an oscillator is a manufacturing method of an oscillator which includes a vibrator and a semiconductor circuit device including an oscillation part connected to the vibrator and a control part to switch an operation mode between a normal mode in which the oscillation part performs an oscillation operation and an inspection mode in which characteristics of the vibrator are inspected, and the manufacturing method includes preparing the semiconductor circuit device in which the operation mode is set to the inspection mode, connecting the semiconductor circuit device and the vibrator electrically, and inspecting the characteristics of the vibrator which is in a state electrically connected to the semiconductor circuit device.. .

Semiconductor circuit device, electronic device, electronic apparatus, and moving object


A semiconductor circuit device includes: a semiconductor substrate; and a first circuit block including an analog circuit as a component, a second circuit block including a digital circuit as a component, a connection pad, and a connection wire electrically connecting the connection pad with the first circuit block, all of which are arranged on the semiconductor substrate. The connection wire is provided so as not to overlap the second circuit block in a plan view..
Seiko Epson Corporation


Power semiconductor circuit


A temperature-dependent control terminal resistance element which is electrically connected between the drive circuit and the control terminal; and/or a temperature-dependent load current terminal resistance element which is electrically connected between the drive circuit and the second load current terminal; and/or a first current branch which electrically connects the control terminal is to the second load current terminal, wherein a temperature-dependent control load current terminal resistance element is electrically connected into the first current branch. In the event of heating of a power semiconductor switch, the invention reduces the switching losses of the power semiconductor switch..

Strain and pressure sensing device, microphone, manufacturing strain and pressure sensing device, and manufacturing microphone


According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor.
Kabushiki Kaisha Toshiba


Semiconductor circuit and semiconductor system


An example embodiment discloses a flip-flop including a first inverter configured to invert first data, first and second transistors connected to each other in series and configured to receive the inverted first data and a first clock, respectively, a third transistor and a first gate configured to perform a logic operation on the first data and the first clock, the third transistor configured to receive an output of the logic operation. The second transistor and the third transistor are connected to a first node..

Carrier-bonding methods and articles for semiconductor and interposer processing


A thin sheet (20) disposed on a carrier (10) via a surface modification layer (30) to form an article (2), wherein the article may be subjected to high temperature processing, as in feol semiconductor processing, not outgas and have the thin sheet maintained on the carrier without separation therefrom during the processing, yet be separated therefrom upon room temperature peeling force that leaves the thinner one of the thin sheet and carrier intact. Interposers (56) having arrays (50) of vias (60) may be formed on the thin sheet, and devices (66) formed on the interposers.
Corning Incorporated


Semiconductor circuit design method, memory compiler and computer program product


A method of designing a semiconductor circuit includes generating a model of the semiconductor circuit. The model includes a functional area corresponding to a first block of the semiconductor circuit, and a loading area corresponding to a second block of the semiconductor circuit, wherein the first block is connected to the second block by a signal line.
Taiwan Semiconductor Manufacturing Company, Ltd.


Semiconductor memory device having pads


A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region.
Sk Hynix Inc.


Semiconductor device


A partition in lattice form forms a plurality of housing sections. A plurality of circuit blocks including a semiconductor block and a terminal base block are electrically connected one to another in a state of being housed in the housing sections to form a power semiconductor circuit.
Mitsubishi Electric Corporation


Semiconductor memory device having pads


A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region.
Sk Hynix Inc.


Thin film transistor, semiconductor device, and manufacturing the same


A semiconductor element is operated without being affected even when the substrate is largely affected by heat shrink such as a large substrate. Furthermore, a thin film semiconductor circuit and a thin film semiconductor device each having the semiconductor element.
Semiconductor Energy Laboratory Co., Ltd.


Charged particle beam apparatus


In a pattern inspection of a semiconductor circuit, to specify a cause of a process defect, not only a distribution on and across wafer of the number of defects but also more detailed, that is, the fact that how many defects occurred where on the semiconductor pattern is needed to be specified in some cases. Accordingly, the present invention aims to provide an apparatus capable of easily specifying a cause of a process defect based upon a positional relationship of a distribution of defect occurrence frequency and a pattern.
Hitachi High-technologies Corporation


Semiconductor circuit


An inspection device includes first and second electro-optical systems, a first detector, and a shape calculation unit. The first electro-optical system irradiates an object to be inspected with a first electron beam to cause an irradiation mark to be placed on the object to be inspected.
Kabushiki Kaisha Toshiba


Semiconductor circuit


Provided is a semiconductor circuit. The semiconductor circuit includes: an input node configured to receive an enable signal, a sense enable signal, and a clock signal; and a clock gating circuit configured to output an enable clock signal corresponding to the clock signal while a signal level of the enable signal is at a first level regardless of a signal level of the sense enable signal, when the semiconductor circuit is in a high-voltage mode, and output an enable clock signal corresponding to the clock signal while a signal level of at least one of the enable signal and the sense enable signal is at the first level, when the semiconductor circuit is in a low-voltage mode..
Samsung Electronics Co., Ltd.


Circuits, methods, and computer programs to detect mechanical stress and to monitor a system


Embodiments provide a circuit, a method, and a computer program configured to detect mechanical stress and a circuit, a method, and a computer program configured to monitor safety of a system. The detection circuit is configured to detect mechanical stress of a semiconductor circuit.
Infineon Technologies Ag


Thermal observer and overload protection for power switches


The present disclosure proposes the placing of temperature sensors embedded in the power semiconductor device. In this, at least one of the embedded temperature sensors is placed within or close to the heat source, active areas or channels of the power semiconductor circuit, and at least one of the embedded temperature sensors is placed more apart from the heat source, active areas or channels of the power semiconductor circuit.
Infineon Technologies Ag


Semiconductor circuit


A semiconductor circuit includes a first input section into which a first input signal is inputted, a second input section into which a second input signal is inputted, an output generation circuit which is connected to the first and second input sections and generates an output signal based on the input signals, an output section which outputs the output signal, and a current source which is connected to connection nodes between the input sections and the output generation circuit.. .
Kabushiki Kaisha Toshiba


Power semiconductor module


To achieve the above object, each power semiconductor module includes a can-type cooling case that is formed with a plate spring portion that generates compressive stress in the semiconductor circuit unit, an adjustment portion that is deformed to adjust elastic deformation of the plate spring portion, and a sidewall portion to which the plate spring portion and the adjustment portion are joined.. .

Semiconductor reparing the same


Provided is a semiconductor system and method for repairing the same that may improve repair capacity of the semiconductor system. The semiconductor system comprises a semiconductor circuit configured to output a remaining repair information and perform a repair operation in response to an external command, and a host configured to determine a number of available repairs based on the remaining repair information and provide the semiconductor circuit with the external command based on the number of available repairs..
Sk Hynix Inc.


Method of forming a semiconductor circuit


A method of forming a semiconductor circuit includes receiving target layout. An optical proximity correction process is performed on the target layout data to generate a post-opc layout.
International Business Machines Corporation


Semiconductor device, transmission system, manufacturing semiconductor device, and manufacturing transmission system


Disclosed herein is a semiconductor device including: a semiconductor circuit element configured to process an electrical signal having a predetermined frequency; and a transmission line configured to be connected to the semiconductor circuit element via a wire and transmit the electrical signal. An impedance matching pattern having a symmetric shape with respect to a direction of the transmission line is provided in the transmission line..
Sony Corporation


Method for including decoupling capacitors into semiconductor circuit having logic circuit therein and semiconductor circuit thereof


A semiconductor circuit comprises a first and a second logic circuit, a first and a second decoupling capacitor. The first decoupling capacitor is arranged in a first area around the first logic circuit and the second decoupling capacitor is arranged in a second area around the second logic circuit.
Mediatek Inc.


Charge measuring device


A charge measuring device detects focused ion beam attacks on an integrated semiconductor circuit with a capacitor, a field effect transistor, and a charge collecting device all manufactured in the integrated semiconductor circuit and insulated from additional circuit elements. A first pole of the capacitor is conductively connected to the charge collecting device and a gate of the field effect transistor.
Technische Universitaet Berlin


Semiconductor substrate, thin film transistor, semiconductor circuit, liquid crystal display apparatus, electroluminescent apparatus, semiconductor substrate manufacturing method, and semiconductor substrate manufacturing apparatus


According to a semiconductor substrate (40), a space (a) between a plurality of si thin film (16), which are provide apart from one another on the insulating substrate (30), is (i) larger than a difference between elongation of part of the insulating substrate which part corresponds to the space (a) and elongation of each of si wafers (10) when a change is made from room temperature to 600° c. And (ii) smaller than 5 mm.
Sharp Kabushiki Kaisha


Semiconductor circuit apparatus and electronic apparatus


A semiconductor circuit apparatus includes a controller configured to output a control signal, an outputting part configured to output the control signal outside of the semiconductor circuit apparatus, a condition holding part configured to hold a generating condition and an output condition of a trigger signal, a trigger signal generator configured to generate the trigger signal, if the control signal satisfies the generating condition, a delay controller configured to give a delay to the trigger signal based on the output condition, and a selector configured to be disposed between the controller and the outputting part and to selectively output the trigger signal delayed at the delay controller to the outputting part instead of the control signal output from the controller based on the output condition.. .

Bus system for semiconductor circuit


An exemplary semiconductor circuit bus system includes: a first bus comprised of distributed buses and having a first transfer rate; a second bus with a second transfer rate higher than the first transfer rate; a transmission node; a bus interface (if) to connect the transmission node to the first bus; a router which connects the first and second buses; and a reception node connected to the second bus. The bus if controls the flow rate of data flowing through the transmission routes of the first bus by reference to information about the amounts of transmissible data of the transmission routes.



Semiconductor Circuit topics:
  • Semiconductor
  • Semiconductor Circuit
  • Circuit Board
  • Reference Voltage
  • Semiconductor Substrate
  • Optical Fiber
  • Regenerate
  • Conductive Elements
  • Concentrated
  • Automation
  • Electronic Design Automation
  • Simulation
  • Electric Conversion
  • Shallow Trench Isolation
  • Photoelectric Conversion


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