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Semiconductor Circuit patents



      
           
This page is updated frequently with new Semiconductor Circuit-related patent applications. Subscribe to the Semiconductor Circuit RSS feed to automatically get the update: related Semiconductor RSS feeds. RSS updates for this page: Semiconductor Circuit RSS RSS


Semiconductor circuit

Toshiba

Semiconductor circuit

Power semiconductor module

Power semiconductor module

Power semiconductor module

Sk Hynix

Semiconductor system and method for reparing the same

Date/App# patent app List of recent Semiconductor Circuit-related patents
01/29/15
20150030051
 Thermal observer and overload protection for power switches patent thumbnailnew patent Thermal observer and overload protection for power switches
The present disclosure proposes the placing of temperature sensors embedded in the power semiconductor device. In this, at least one of the embedded temperature sensors is placed within or close to the heat source, active areas or channels of the power semiconductor circuit, and at least one of the embedded temperature sensors is placed more apart from the heat source, active areas or channels of the power semiconductor circuit.
Infineon Technologies Ag
01/15/15
20150016205
 Semiconductor circuit patent thumbnailSemiconductor circuit
A semiconductor circuit includes a first input section into which a first input signal is inputted, a second input section into which a second input signal is inputted, an output generation circuit which is connected to the first and second input sections and generates an output signal based on the input signals, an output section which outputs the output signal, and a current source which is connected to connection nodes between the input sections and the output generation circuit.. .
Kabushiki Kaisha Toshiba
01/15/15
20150016063
 Power semiconductor module patent thumbnailPower semiconductor module
To achieve the above object, each power semiconductor module includes a can-type cooling case that is formed with a plate spring portion that generates compressive stress in the semiconductor circuit unit, an adjustment portion that is deformed to adjust elastic deformation of the plate spring portion, and a sidewall portion to which the plate spring portion and the adjustment portion are joined.. .
01/08/15
20150009770
 Semiconductor  reparing the same patent thumbnailSemiconductor reparing the same
Provided is a semiconductor system and method for repairing the same that may improve repair capacity of the semiconductor system. The semiconductor system comprises a semiconductor circuit configured to output a remaining repair information and perform a repair operation in response to an external command, and a host configured to determine a number of available repairs based on the remaining repair information and provide the semiconductor circuit with the external command based on the number of available repairs..
Sk Hynix Inc.
01/01/15
20150007119
 Method of forming a semiconductor circuit patent thumbnailMethod of forming a semiconductor circuit
A method of forming a semiconductor circuit includes receiving target layout. An optical proximity correction process is performed on the target layout data to generate a post-opc layout.
International Business Machines Corporation
01/01/15
20150002360
 Semiconductor device, transmission system,  manufacturing semiconductor device, and  manufacturing transmission system patent thumbnailSemiconductor device, transmission system, manufacturing semiconductor device, and manufacturing transmission system
Disclosed herein is a semiconductor device including: a semiconductor circuit element configured to process an electrical signal having a predetermined frequency; and a transmission line configured to be connected to the semiconductor circuit element via a wire and transmit the electrical signal. An impedance matching pattern having a symmetric shape with respect to a direction of the transmission line is provided in the transmission line..
Sony Corporation
01/01/15
20150001675
 Method for including decoupling capacitors into semiconductor circuit having logic circuit therein and semiconductor circuit thereof patent thumbnailMethod for including decoupling capacitors into semiconductor circuit having logic circuit therein and semiconductor circuit thereof
A semiconductor circuit comprises a first and a second logic circuit, a first and a second decoupling capacitor. The first decoupling capacitor is arranged in a first area around the first logic circuit and the second decoupling capacitor is arranged in a second area around the second logic circuit.
Mediatek Inc.
12/25/14
20140375303
 Charge measuring device patent thumbnailCharge measuring device
A charge measuring device detects focused ion beam attacks on an integrated semiconductor circuit with a capacitor, a field effect transistor, and a charge collecting device all manufactured in the integrated semiconductor circuit and insulated from additional circuit elements. A first pole of the capacitor is conductively connected to the charge collecting device and a gate of the field effect transistor.
Technische Universitaet Berlin
12/18/14
20140367691
 Semiconductor substrate, thin film transistor, semiconductor circuit, liquid crystal display apparatus, electroluminescent apparatus, semiconductor substrate manufacturing method, and semiconductor substrate manufacturing apparatus patent thumbnailSemiconductor substrate, thin film transistor, semiconductor circuit, liquid crystal display apparatus, electroluminescent apparatus, semiconductor substrate manufacturing method, and semiconductor substrate manufacturing apparatus
According to a semiconductor substrate (40), a space (a) between a plurality of si thin film (16), which are provide apart from one another on the insulating substrate (30), is (i) larger than a difference between elongation of part of the insulating substrate which part corresponds to the space (a) and elongation of each of si wafers (10) when a change is made from room temperature to 600° c. And (ii) smaller than 5 mm.
Sharp Kabushiki Kaisha
12/11/14
20140365809
 Semiconductor circuit apparatus and electronic apparatus patent thumbnailSemiconductor circuit apparatus and electronic apparatus
A semiconductor circuit apparatus includes a controller configured to output a control signal, an outputting part configured to output the control signal outside of the semiconductor circuit apparatus, a condition holding part configured to hold a generating condition and an output condition of a trigger signal, a trigger signal generator configured to generate the trigger signal, if the control signal satisfies the generating condition, a delay controller configured to give a delay to the trigger signal based on the output condition, and a selector configured to be disposed between the controller and the outputting part and to selectively output the trigger signal delayed at the delay controller to the outputting part instead of the control signal output from the controller based on the output condition.. .
12/11/14
20140365703

Bus system for semiconductor circuit


An exemplary semiconductor circuit bus system includes: a first bus comprised of distributed buses and having a first transfer rate; a second bus with a second transfer rate higher than the first transfer rate; a transmission node; a bus interface (if) to connect the transmission node to the first bus; a router which connects the first and second buses; and a reception node connected to the second bus. The bus if controls the flow rate of data flowing through the transmission routes of the first bus by reference to information about the amounts of transmissible data of the transmission routes.
12/11/14
20140362628

Modular multiple converter comprising reverse conductive power semiconductor switches


A submodule for a modular multilevel converter has at least one unipolar energy storage device, first and second connection terminals and a power semiconductor circuit with power semiconductor switches that are driven with a control signal and freewheeling diodes connected in parallel with an assigned power semiconductor switch in the opposite sense. Depending on the driving of the power semiconductor switches, the voltage across the energy storage device(s) or else a zero voltage can be generated between the first and second connection terminals.
12/11/14
20140361424

Semiconductor device


A semiconductor device includes: a plurality of semiconductor modules, each of which includes a semiconductor circuit having a circuit board on which at least one or more semiconductor chips are mounted; and a module storage case that accommodates the plurality of semiconductor modules which are arranged in parallel. In the module storage case, a plurality of pairs of positioning guide members, which position and guide the semiconductor modules, are formed on opposite surfaces forming a module storage region for accommodating the semiconductor modules so as to protrude inward and to face each other, so that a distance between the plurality of semiconductor modules in a longitudinal direction can be selected.
12/04/14
20140359388

Core circuit test architecture


A scan test architecture facilitates low power testing of semiconductor circuits by selectively dividing the serial scan paths into shorter sections. Multiplexers between the sections control connecting the sections into longer or shorted paths.
11/27/14
20140347129

Semiconductor circuit


A semiconductor circuit which can have stable input output characteristics is provided. Specifically, a semiconductor circuit in which problems caused by the leakage current of a switching element are suppressed is provided.
11/20/14
20140344654

Semiconductor system


A semiconductor system including a semiconductor circuit configured to compare a first error detection code generated by performing an operation on read data to a second error detection code and determine a data transmission error, and a controller configured to provide the second error detection code, generated by performing an operation on expect data based on the read data, to the semiconductor circuit.. .
11/20/14
20140342527

Integrated circuits separated by through-wafer trench isolation


An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.. .
11/20/14
20140340971

Semiconductor circuit and leakage current test system


A semiconductor circuit includes a test control unit configured to generate a driving activation signal and a sensing activation signal in response to a command and an address; a pad; a driver configured to drive the pad to a predetermined level in response to activation of the driving activation signal; and a sensing unit configured to compare a voltage level of the pad with a reference voltage in response to activation of the sensing activation signal, and output a sensing signal.. .
11/13/14
20140337631

Method for copy-protected storage of information on a data carrier


A method for storing digital data information on a data carrier and for reading the information therefrom uses a disk having an individual digital identifier. A signature is formed, and the information includes information items, which can be processed by a first electronic data processing device only if the identifier and the signature are in a predefined relation to one another.
11/13/14
20140334046

Semiconductor circuit


A semiconductor circuit includes a clamp circuit and a switch circuit connected in series between a first power source terminal and a second power source terminal. The clamp circuit is configured to connect the first power source terminal to the second power source terminal when a voltage difference between the first and second power source terminals exceeds a threshold value.
11/06/14
20140327115

Multiple seal-ring structure for the design, fabrication, and packaging of integrated circuits


A semiconductor circuit design includes an outer seal-ring and an inner seal-ring for each sub-section of the design that may potentially be cut into separate die. The use of multiple seal-rings permits a single circuit design and fabrication run to be used to support flexibly packaging different product releases having different numbers of integrated circuit blocks per packaged unit..
10/30/14
20140325468

Storage medium, and generation generating transactions for performance evaluation


A non-transitory computer-readable recording medium having stored therein a program for causing a computer to execute a process comprising: generating a transaction scenario that describes a dependency between operations of semiconductor elements included in a semiconductor circuit, according to a parameter for defining the dependency and waveform data that indicates a level transition of each signal output from each of the semiconductor elements; and generating transactions for testing the semiconductor circuit, according to the transaction scenario.. .
10/02/14
20140294340

Optical module, optical communication equipment, and optical transmission device


An optical module includes a circuit board, an optical element on the circuit board, a semiconductor circuit element thereon and electrically coupled with the optical element, an optical connection member formed on a back surface of the circuit board and including an optical fiber receiving groove, and a pressing plate disposed on a side opposite to the circuit board of the optical connection member so as to fix the optical fiber. The semiconductor circuit element is mounted nearer a tip side of the circuit board in relation to the optical element such that the circuit board, the optical connection member and a tip part of the optical fiber are sandwiched between the semiconductor circuit element and the pressing plate.
09/25/14
20140288871

Test apparatus and test system


A test apparatus of the present embodiment has a logic cell, a host and a first bus. The host includes: a conversion section configured to analyze a test vector and convert the test vector to signal control data and a waveform shape; and a judgment section configured to analyze an expected value comparison result to perform success/failure judgment of a test of a semiconductor circuit.
09/25/14
20140287703

Integrated circuit with antenna for dielectric waveguide


A system includes an integrated circuit that has a substrate with a top surface and a bottom surface. Semiconductor circuitry is including a radio frequency (rf) amplifier configured to produce an rf signal or an rf receiver configured to receive an rf signal is formed on the top surface of the substrate.
09/18/14
20140282319

Semiconductor circuit design method, memory compiler and computer program product


A semiconductor circuit includes an array of repeating blocks, each of the blocks having a device, and at least one signal line connecting the devices of the blocks. A model of the semiconductor circuit is generated to include a functional area corresponding to at least one first block of the array, and a loading area corresponding to at least one second block of the array.
09/18/14
20140282318

Timing delay characterization method, memory compiler and computer program product


In a timing delay characterization method, a signal path between an input terminal and an output terminal of a semiconductor circuit is divided into an input stage, a processing stage, and an output stage. An operation of the input stage is simulated at various input parameter values of an input parameter at the input terminal to obtain corresponding extrinsic input timing delays associated with the input stage.
09/18/14
20140282297

Method for generating post-opc layout in consideration of top loss of etch mask layer


A method of forming a semiconductor circuit includes receiving target layout. An optical proximity correction process is performed on the target layout data to generate a post-opc layout.
09/18/14
20140266364

Semiconductor circuit and operating the same


Provided are a semiconductor circuit and a method of operating the same. The semiconductor circuit includes a first pulse generating circuit enabled to a rising edge of a clock signal and configured to generate a first read pulse, a second pulse generating circuit enabled to a rising edge of the clock signal and configured to generate a second read pulse independent of the first read pulse, a dynamic pull-down stage configured to develop a voltage level of a first dynamic node based at least on data values of an input signal and the first and second read pulses, and a dynamic pull-up stage configured to develop a voltage level of a second dynamic node based at least on data values of the input signal and the first and second read pulses..
09/18/14
20140265848

Micro-plasma generation using micro-springs


An ionic wind engine unit for cooling semiconductor circuit assemblies includes a curved micro-spring and an associated electrode that are maintained apart at an appropriate gap distance such that, when subjected to a sufficiently high voltage potential (i.e., as determined by peek's law), current crowding at the spring's tip portion creates an electrical field that sufficiently ionizes neutral molecules in a portion of the air-filled region surrounding the tip portion to generate a micro-plasma event. In one engine type the electrode is a metal pad, and in a second engine type the electrode is a second micro-spring.
09/11/14
20140252353

Field-effect transistor, and memory and semiconductor circuit including the same


Provided is a field-effect transistor (fet) having small off-state current, which is used in a miniaturized semiconductor integrated circuit. The field-effect transistor includes a thin oxide semiconductor which is formed substantially perpendicular to an insulating surface and has a thickness of greater than or equal to 1 nm and less than or equal to 30 nm, a gate insulating film formed to cover the oxide semiconductor, and a strip-like gate which is formed to cover the gate insulating film and has a width of greater than or equal to 10 nm and less than or equal to 100 nm.
09/04/14
20140247677

Method of accessing semiconductor memory and semiconductor circuit


A method of accessing a semiconductor memory is disclosed which includes outputting a row address and an active command to the semiconductor memory; outputting a column address and a read or write command to the semiconductor memory; and outputting a spare access command to the semiconductor memory to access data from a spare memory cell at a timing based on an additive latency of the semiconductor memory. Related devices and systems are also disclosed..
09/04/14
20140247077

Semiconductor circuit


Provided is a semiconductor circuit. The semiconductor circuit includes a pulse generator which is enabled by a rising edge of a clock signal and generates a read pulse which varies depending on a voltage of a feedback node; and a sense amplifier which generates a voltage of a dynamic node and the voltage of the feedback node in accordance with a data value of an input signal using the read pulse..
08/28/14
20140241017

Input circuit and power supply circuit


An input circuit connected to a semiconductor circuit is configured to receive a voltage indicating an on/off operation state of a power supply and to output a voltage that is lower than a breakdown voltage of the semiconductor circuit. The input circuit includes a first nmos transistor and a resistor element.
08/21/14
20140231871

Methods of containing defects for non-silicon device engineering


An apparatus including a device including a channel material having a first lattice structure on a well of a well material having a matched lattice structure in a buffer material having a second lattice structure that is different than the first lattice structure. A method including forming a trench in a buffer material; forming an n-type well material in the trench, the n-type well material having a lattice structure that is different than a lattice structure of the buffer material; and forming an n-type transistor.
08/14/14
20140227989

Semiconductor circuit, d/a converter, mixer circuit, radio communication device, adjusting threshold voltage, and determining quality of transistor


According to an embodiment, a semiconductor circuit includes a substrate, a tunnel oxide film, a charge storage film, a blocking layer, and plural nodes. The substrate is made of a semiconductor in which two diffusion layers each serving as either a source or a drain are formed.
08/14/14
20140225664

Semiconductor circuit with electrical connections having multiple signal or potential assignments


A semiconductor circuit provides at least one first electrical pin with multiple signal assignment or potential assignment in order to integrate several circuit variants in the semiconductor circuit. It has a switch element for isolating or connecting at least one first electrical pin from or to an input or output of a functional unit integrated in the semiconductor circuit..
07/24/14
20140204552

Sensor and manufacturing sensor


A sensor includes: a substrate on which an active chip including a semiconductor circuit is disposed; and a passive chip including an acceleration sensor, and a thick portion and a thin portion, the thick portion being disposed on the substrate so as to be in contact therewith. An active chip terminal is disposed on the active chip.
07/17/14
20140197500

Capacitive sensor integrated onto semiconductor circuit


There is disclosed a capacitive sensor on a passivation layer of a semiconductor circuit such as an asic, and a method for manufacturing such sensor. The system and method may comprise: forming a bottom electrode layer and landing pad on a portion of the passivation layer located over active circuitry of the asic; forming a gas sensitive layer onto the bottom electrode layer and the landing pad; creating a via through the gas sensitive layer to expose a portion of the landing pad; forming a top electrode layer onto the gas sensitive layer, wherein the top electrode layer completely overlays a surface area of the bottom electrode layer, and wherein the forming process for the top electrode layer deposits a portion of the top electrode layer into the via hole, thereby forming an electrical connection between the top electrode layer and the landing pad..
07/10/14
20140192445

Electrostatic discharge protection circuit and semiconductor circuit device


The invention provides an electrostatic protection circuit that is effective in absorbing static electricity that is continuously input. The electrostatic protection circuit includes a circuit constituting a latch and a static electricity absorption circuit.
07/03/14
20140184288

Semiconductor circuit and operating the same


Provided are a semiconductor circuit and method for operating the same. The semiconductor circuit includes a first flip-flop configured to, based on input data synchronized to a first clock, output first output data synchronized to a second clock different from the first clock, and a second flip-flop configured to, based on the first output data, output second output data synchronized to the second clock, wherein the first and the second flip-flops share an inverted second clock and a delayed second clock and output the first and the second output data based thereon, respectively..
07/03/14
20140184162

Power storage device control system, power storage system, and electrical appliance


Deterioration of a power storage device is reduced. Switches that control the connections of a plurality of power storage devices separately are provided.
06/26/14
20140175608

Method for including decoupling capacitors into semiconductor circuit having logic circuit therein and semiconductor circuit thereof


A method for including decoupling capacitors into a semiconductor circuit having at least a logic circuit therein, includes: arranging a first decoupling capacitor and a second decoupling capacitor into a first area and a second area around the logic circuit respectively, wherein a gate oxide thickness of the first decoupling capacitor is different from a gate oxide thickness of the second decoupling capacitor, and a distance between the first area and the first logic circuit is shorter than a distance between the second area and the second logic circuit.. .
06/26/14
20140175607

Semiconductor device integrating passive elements


The present invention provides a semiconductor device integrating passive elements, which applies to analog circuits, wherein capacitors, resistors and inductors are fabricated by a tvs technology. The semiconductor device comprises a substrate; at least one passive element arranged in the substrate; and at least one semiconductor integrated circuit formed in the substrate.
06/19/14
20140167281

Stack type semiconductor circuit with impedance calibration


A stack type semiconductor circuit includes a plurality of semiconductor chips stacked therein, wherein the plurality of semiconductor chips are configured to share impedance calibration information. The plurality of semiconductor chips include at least one resistance value of an external resistor and an impedance calibration signal as the impedance calibration information..
06/12/14
20140159038

Complementary metal oxide semiconductor circuit structure, preparation method thereof and display device


Provided are a cmos circuit structure, a preparation method thereof and a display device, wherein a pmos region in the cmos circuit structure is of a ltps tft structure, that is, the pmos semiconductor layer is prepared from a p type doped polysilicon material; an nmos region is of an oxide tft structure, that is, the nmos semiconductor layer is made of an oxide material; three doping processes applied to the nmos region during the ltps process may be omitted in the case in which the nmos semiconductor layer in the nmos region is made of an oxide material instead of the polysilicon material, which may simplify the preparation of the cmos circuit structure as well as reduce a production cost. Furthermore, it is only required to crystallizing the pmos semiconductor layer, which may also extend the lifespan of laser tube, contributing to reduction of the production cost..
06/05/14
20140151844

Integrated circuits separated by through-wafer trench isolation


An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.. .
05/29/14
20140146616

Matching semiconductor circuits


Devices, circuitry, and methods for improving matching between semiconductor circuits are shown and described. Measuring a difference in matching between semiconductor circuits may be performed with a test current generator and test current measurement circuit, and adjusting a threshold voltage of a semiconductor component of at least one circuit until the difference between the circuits is at a desired difference may be performed with a program circuit..
05/29/14
20140145779

Circuit arrangement for switching a current, and operating a semiconductor circuit breaker


A control voltage is generated at a control input of a semiconductor circuit breaker by an actuation circuit at switching flanks of a switching signal, said control voltage having a profile which is flattened in relation to the profile of the switching signal. With the disclosed method, the switching losses in a semiconductor circuit breaker are reduced.
05/29/14
20140145699

Systems and methods for controlling power in semiconductor circuits


A power control circuit includes a plurality of transistors coupled between a power supply node and a gated power supply node, wherein the gate electrode of a first transistor of the plurality of transistors is coupled to receive a power control signal, wherein, in response to assertion of the power control signal, the first transistor is placed into a conductive state; a first voltage comparator, wherein, in response to assertion of the power control signal, places a second transistor of the plurality of transistors in a conductive state when a voltage on the gated voltage supply node reaches a first reference voltage; and a second voltage comparator, wherein, in response to assertion of the power control signal, places a third transistor of the plurality of transistors in a conductive state when the voltage on the gated voltage supply node reaches a second reference voltage different from the first reference voltage.. .
05/29/14
20140145208

Cascoded semiconductor devices


A cascoded power semiconductor circuit has a clamp circuit between the source and gate of a gallium nitride or silicon carbide fet to provide avalanche protection for the cascode mosfet transistor.. .
05/08/14
20140129750

Bus controller, bus control system and network interface


In a bus control system for a semiconductor circuit, data is transmitted between first and second nodes over a network of buses. The bus controller is connected directly to the first node and includes: a route load detector which detects loads on routes that form at least one of a group of forward routes leading from the first to the second node and a group of backward routes leading from the second to the first node; a candidate route extraction circuit which extracts a candidate route from the group of routes so that loads on the routes that form the group become uniform; a route determining circuit which determines the route to transmit the data based on the candidate route and a predetermined selection rule; and a data communication circuit which transmits the data between the first and second nodes based on header information including route information indicating the route..
05/01/14
20140122954

Core circuit test architecture


A scan test architecture facilitates low power testing of semiconductor circuits by selectively dividing the serial scan paths into shorter sections. Multiplexers between the sections control connecting the sections into longer or shorted paths.
05/01/14
20140117548

Semiconductor device and manufacturing the same


A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.. .
05/01/14
20140117098

Method for manufacturing a data carrier


A method for manufacturing a portable data carrier includes the steps of: providing a carrier band having an upper side and a lower side disposed opposite the upper side including a contact field formed with at least one contact area; arranging a semiconductor circuit on the lower side of the carrier band and electroconductively connected with the corresponding contact area; and carrying out an injection molding process on the lower side a potting compound formed around the semiconductor circuit and having outer dimensions according to a portable data carrier standard specification. An injection channel for injecting the potting compound is arranged on a side of the potting compound mold parallel to the lower side, and after the injection of the potting compound a depression remains in the finished data carrier due to the injection channel.
04/17/14
20140103299

Nanotube array electronic and opto-electronic devices


Carbon nanotube (cnt)-based devices and technology for their fabrication are disclosed. The planar, multiple layer deposition technique and simple methods of change of the nanotube conductivity type during the device processing are utilized to provide a simple and cost effective technology for large scale circuit integration.
04/10/14
20140099999

Light-emitting device, manufacturing the same, and cellular phone


The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other, a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a front side and in an upper portion in the longitudinal direction of the housing.. .
04/10/14
20140097888

Multi-voltage supplied input buffer


An input buffer capable of interfacing higher-voltage logic signals to lower voltage internal circuitry includes a first stage configured to generate a first output signal in response to an input signal, the first stage configured to receive a first power supply voltage and including semiconductor circuit components configured to be variably biased responsive to a variable voltage. The input buffer also includes a second stage configured to receive the first output voltage and to responsively generate a second output signal, the second stage biased according to the first power supply voltage.
04/03/14
20140091361

Methods of containing defects for non-silicon device engineering


An apparatus including a device including a channel material having a first lattice structure on a well of a well material having a matched lattice structure in a buffer material having a second lattice structure that is different than the first lattice structure. A method including forming a trench in a buffer material; forming an n-type well material in the trench, the n-type well material having a lattice structure that is different than a lattice structure of the buffer material; and forming an n-type transistor.
03/27/14
20140089869

Layout semiconductor circuit structure


A layout method of a semiconductor circuit is provided. The layout method is firstly putting a plurality of circuit patterns on a substrate, wherein a first distance is the largest distance between any one of the circuit patterns and one of other circuit patterns adjacent thereto.
03/20/14
20140082576

Gradient aocv methodology enabling graph-based timing closure with aocv timing models


A method of manufacturing semiconductor circuits seeks timing closure on a preliminarily select, placed and routed set of cells using a delay for each cell as derated by a derate value obtained from a timing model table having a derate value corresponding to a circuit path depth in the netlist. The derate value for a predetermined number of circuit path depths below k are identical.
03/20/14
20140077346

Method and system for pre-migration of metal ions in a semiconductor package


Pre-migration of metal ions is achieved in a controlled manner to form a migrated metalover which an inhibitor is applied to prevent further migration. In a semiconductor circuit, pre-migration of metal ions is achieved by exposing a joined metal system to water, oxygen and an electrical field in a controlled manner.
03/13/14
20140070400

Semiconductor device


In a semiconductor device including semiconductor modules, it is possible to average the temperatures of the semiconductor modules. At least two semiconductor modules, wherein a plurality of semiconductor circuits, on which are mounted one or more semiconductor chips having a gate terminal and gate resistors connected to the gate terminals, are disposed in parallel, are disposed above a cooling body so that an array direction of the semiconductor circuits is a direction intersecting a refrigerant flow.
02/20/14
20140052325

Semiconductor circuit and method in a safety concept for use in a motor vehicle


A semiconductor circuit for an electronic control device for use in a system in a motor vehicle, said system not being mechanically intrinsically safe, and a method for monitoring the semiconductor circuit, wherein the semiconductor circuit comprises a functional computer (fr), at least one monitoring unit (mu) and a monitoring computer (ur), wherein the functional computer (fr), the monitoring unit (mu) and the monitoring computer (ur) are each physically independent of each other, and the full or a restricted function of the semiconductor circuit is ensured by the functional computer (fr) in the event of a failure of the monitoring computer (ur) and vice versa.. .
02/13/14
20140047293

Semiconductor circuit and methodology for in-system scan testing


A semiconductor circuit comprising a digital circuit portion, which comprises a combinatorial logic block. The semiconductor circuit further comprises a scan chain for loading and applying a predefined digital test pattern to inputs of the combinatorial logic block.
02/06/14
20140035106

Multiple seal-ring structure for the design, fabrication, and packaging of integrated circuits


A semiconductor circuit design includes an outer seal-ring and an inner seal-ring for each sub-section of the design that may potentially be cut into separate die. The use of multiple seal-rings permits a single circuit design and fabrication run to be used to support flexibly packaging different product releases having different numbers of integrated circuit blocks per packaged unit..
01/30/14
20140027785

Cascoded semiconductor devices


A cascoded power semiconductor circuit is provided for power switches based on depletion-mode (normally on) devices. The control circuit makes use of a bootstrap arrangement that allows an active control of both power switches of a cascode circuit using a single gate driver..
01/23/14
20140023265

Pattern matching apparatus and computer program


The semiconductor inspection apparatus includes means for imaging a shape on a wafer or on an exposure mask; means for storing an image inspected by the imaging means; means for storing design data of the semiconductor circuit corresponding to a position on the wafer or on the exposure mask which are to be imaged by the imaging means; means for storing a design-data image obtained as a result of converting the design data into an image; means for generating a design-data roi image by converting an interest drawing region found from a relative crude-density relation of a shape included in the design-data image into an image; and a position alignment section configured to carry out position alignment on the inspected image and the design-data image. The semiconductor inspection apparatus makes use of the design-data roi image in order to identify a position at which the inspected image and the design-data image match each other or compute the degree of coincidence..
01/16/14
20140014975

Semiconductor chip including heat radiation member, and display module


A semiconductor chip includes a circuit region having an integrated semiconductor circuit on a semiconductor substrate, and a heat radiation member on at least a portion of a scribe lane region configured to at least partially surround the circuit region, the heat radiation member including a plurality of heat radiation fins that extend in a direction orthogonal to an upper surface of the semiconductor substrate.. .


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Semiconductor Circuit topics: Semiconductor, Semiconductor Circuit, Circuit Board, Reference Voltage, Semiconductor Substrate, Optical Fiber, Regenerate, Conductive Elements, Concentrated, Automation, Electronic Design Automation, Simulation, Electric Conversion, Shallow Trench Isolation, Photoelectric Conversion

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