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Semiconductor Circuit patents

      

This page is updated frequently with new Semiconductor Circuit-related patent applications.




 Light-emitting device,  manufacturing the same, and cellular phone patent thumbnailLight-emitting device, manufacturing the same, and cellular phone
The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other; a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a front side and in an upper portion in the longitudinal direction of the housing.. .
Semiconductor Energy Laboratory Co., Ltd.


 Light-emitting device,  manufacturing the same, and cellular phone patent thumbnailLight-emitting device, manufacturing the same, and cellular phone
The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other; a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a front side and in an upper portion in the longitudinal direction of the housing.. .
Semiconductor Energy Laboratory Co., Ltd.


 Power semiconductor circuit having a field effect transistor patent thumbnailPower semiconductor circuit having a field effect transistor
A power semiconductor circuit comprising a field effect transistor having a drain, a source and a gate as terminals, and further comprising a control device having a drive device and an undervoltage detection circuit. The drive device drives the field effect transistor and is electrically connected to the gate of the field effect transistor.
Semikron Elektronik Gmbh & Co., Kg


 Semiconductor device and semiconductor circuit including the same patent thumbnailSemiconductor device and semiconductor circuit including the same
A semiconductor device is disclosed. The semiconductor device includes a substrate and a plurality of devices on the substrate, wherein a first device of the devices includes a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer brought together with the first nitride semiconductor layer to form a first heterojunction interface, between the substrate and the first nitride semiconductor layer, a third nitride semiconductor layer brought together with the second nitride semiconductor layer to form a second heterojunction interface, between the substrate and the second nitride semiconductor layer, and a first contact electrically connected to the first and second heterojunction interfaces..
Lg Innotek Co., Ltd.


 Semiconductor device and semiconductor circuit including the device patent thumbnailSemiconductor device and semiconductor circuit including the device
A semiconductor device is disclosed. The semiconductor device includes a second conductive type substrate including a first first-conductive-type doping layer and a plurality of devices on the second conductive type substrate, wherein a first device of the devices includes a first nitride semiconductor layer on the first first-conductive-type doping layer, a second nitride semiconductor layer brought together with the first nitride semiconductor layer to form a first heterojunction interface, between the first first-conductive-type doping layer and the first nitride semiconductor layer, a first contact electrically connected to the first heterojunction interface, and a contact connector electrically connecting the first contact to the first first-conductive-type doping layer..
Lg Innotek Co., Ltd.


 Semiconductor device with stacked terminals patent thumbnailSemiconductor device with stacked terminals
A semiconductor device includes: a housing; a substrate inside the housing; first and second semiconductor circuits on the substrate; and first and second planar terminals electrically connected to the first and second semiconductor circuits, respectively, the first and second planar terminals stacked on top of each other, wherein each of the first and second planar terminals extends away from the housing.. .
Tesla Motors, Inc.


 Semiconductor circuit and  operating the circuit patent thumbnailSemiconductor circuit and operating the circuit
Provided is a semiconductor circuit which includes a first circuit configured to determine a voltage level of a feedback node based on a voltage level of input data, a voltage level of a latch input node, and a voltage level of a clock signal, a second circuit configured to pre-charge the latch input node based on the voltage level of the clock signal, a third circuit configured to pull down the latch input node based on the voltage level of the feedback node and the voltage level of the clock signal, a latch configured to output output data based on the voltage level of the clock signal and the voltage level of the latch input node, and a control circuit included in at least one of the first to third circuits and the latch and configured to receive the control signal.. .
Samsung Electronics Co., Ltd.


 Method of lateral oxidation of nfet and pfet high-k gate stacks patent thumbnailMethod of lateral oxidation of nfet and pfet high-k gate stacks
A method for fabricating a semiconductor circuit includes obtaining a semiconductor structure having a gate stack of material layers including a high-k dielectric layer; oxidizing in a lateral manner the high-k dielectric layer, such that oxygen content of the high-k dielectric layer is increased first at the sidewalls of the high-k dielectric layer; and completing fabrication of a n-type field effect transistor from the gate stack after laterally oxidizing the high-k dielectric layer of the gate stack.. .
International Business Machines Corporation


 Self powered optical system patent thumbnailSelf powered optical system
Apparatus for a self-powered optical transmitter system. One such system includes an inductor, a power converter, an optical driver, and an optical transducer.

 Method for manufacturing the magnetic field sensor module patent thumbnailMethod for manufacturing the magnetic field sensor module
In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement..
Infineon Technologies Ag


Static discharge system

A semiconductor circuit includes a three-terminal high voltage semiconductor device, a charge distribution structure and a static discharge system. The charge distribution structure has a plurality of conductors with a floating potential.
Power Integrations, Inc.

Semiconductor circuit and semiconductor device

A semiconductor device includes a power source line connected in series to a plurality of power source supply portions; a semiconductor chip including a first communication circuit connected to a lower stage semiconductor chip, a second communication circuit connected to a higher stage semiconductor chip, and a terminal connected to the second communication circuit; and a connecting line directly connected to the power source line and the terminal of the semiconductor chip without disposing any grounded circuitry element in parallel to the terminal and the power source line.. .
Lapis Semiconductor Co., Ltd.

Semiconductor circuit

Provided are semiconductor circuits. A semiconductor circuit includes: a first circuit configured to propagate a value of a first node to a second node based on a voltage level of a clock signal; a second circuit configured to propagate a value of the second node to a third node based on the voltage level of the clock signal; and a third circuit configured to determine a value of the third node based on a voltage level of the second node and the voltage level of the clock signal, wherein the first circuit comprises a first transistor gated to a voltage level of the first node, a second transistor connected in series with the first transistor and gated to the voltage level of the third node, and a third transistor connected in parallel with the first and second transistors and gated to a voltage level of the clock signal to provide the value of the first node to the second node..
Samsung Electronics Co., Ltd.

Pressure sensor package

A pressure sensor package includes a substrate, a pressure sensor, and a semiconductor circuit. The semiconductor circuit is disposed on one surface of the substrate and having a reception space open to one surface of the substrate.
Samsung Electro-mechanics Co., Ltd.

Video game system and toy with rf antenna

A toy for a video game may include an rfid tag, with an inductive antenna for receiving and transmitting signals. The inductive antenna may have a ferromagnetic core.
Activision Publishing, Inc.

Integrated circuit device including polycrystalline semiconductor film and manufacturing the same

An ic device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal.
Samsung Electronics Co., Ltd.

Damage-resistant fin structures and finfet cmos

A design structure for a semiconductor circuit structure, readable by a machine used in design, manufacture, or simulation of an integrated circuit, involves a fin, a footer, and an inlay. The fin includes a fin perimeter and a fin base with an overhang area.
International Business Machines Corporation

Semiconductor apparatus and system

An object of the invention is to provide a semiconductor apparatus capable of achieving conditions that are stricter than the conditions in which the stable operation is guaranteed, without increasing the circuit size. A semiconductor apparatus (10) includes a semiconductor circuit (11); a voltage generator (12) that selects one of at least two types of voltages and applies a power supply voltage, the at least two types of voltages including a normal voltage at which the semiconductor circuit (11) normally operates and a low voltage which is lower than the normal voltage; and a clock generator (13) that supplies the semiconductor circuit (11) with a clock signal having a constant frequency regardless of the power supply voltage..
Renesas Electronics Corporation

Apparatus and a processing a signal depending on a received radio frequency signal

An apparatus for processing a signal depending on a received radio frequency signal is provided. The apparatus includes a first semiconductor circuit including a first part of a radio frequency receiver and a second semiconductor circuit including a second part of the radio frequency receiver.
Intel Ip Corporation

Semiconductor device

A semiconductor circuit includes a first circuit determining a voltage of a first node in response to the clock signal and the input data signal, a first latch determining a voltage of a second node in response to the clock signal and the voltage of the first node, and a second circuit determining a voltage of a third node in response to the clock signal and the voltage of the second node. The output data signal is provided in response to the voltage of the third node, the clock signal controls a flip-flop operation with respect to the input data signal and the output data signal, and respective voltages are maintained constant at the first node, second node and third node regardless of level transitions in the clock signal so long as a level of the input data signal is maintained constant..

System and dual-region singulation

A method for semiconductor fabrication includes forming a first array of semiconductor circuitry and a second array of semiconductor circuitry separated by a singulation region and a contact region. The method also includes forming a first array of process control monitoring structures within the singulation region of a substrate.
Infineon Technologies Austria Ag

Metal-oxide-semiconductor circuit for driving liquid crystal display

A circuit for driving a liquid crystal display includes: a high selection unit turned on by a high selection signal and transferring a high data signal or a common voltage to one side of a storage capacitor; a low selection unit; a high transfer unit connected to one side of the storage capacitor; and a low transfer unit connected to the other side of the storage capacitor, turned on by a low transfer signal and transferring voltage stored at the other side of the storage capacitor to one side of the liquid crystal capacitor or transferring the low data signal or the common voltage transferred by the low selection unit to one side of the liquid crystal capacitor.. .
Raontech Inc.

Multi-junction semiconductor circuit and method

Aspects of the present disclosure are directed to methods, apparatuses and systems involving a multi junction semiconductor circuit. According to an example embodiment, an apparatus includes a multi junction semiconductor circuit including a first current path and a second current path, each current path having respective first and second common voltage nodes to provide an output that is proportional to absolute temperature.
Nxp B.v.

Circuits, methods, and computer programs to detect mechanical stress and to monitor a system

Embodiments provide a circuit, a method, and a computer program configured to detect mechanical stress and a circuit, a method, and a computer program configured to monitor safety of a system. The detection circuit is configured to monitor a mechanical stress level of a semiconductor circuit.
Infineon Technologies Ag

Amplifier voltage limiting in radio-frequency devices

Disclosed herein are systems and method for voltage clamping in semiconductor circuits using through-silicon via (tsv) positioning. A semiconductor die is disclosed that includes a silicon substrate, a bipolar transistor having collector, emitter, base and sub-collector regions disposed on the substrate, and a through-silicon via (tsv) positioned within 35 μm of the sub-collector region in order to clamp a peak voltage of the bipolar transistor at a voltage limit level..
Skyworks Solutions, Inc.

Direct bandgap substrates and methods of making and using

An indirect bandgap thin film semiconductor circuit can be combined with a compound semiconductor led such as to provide an active matrix led array that can have high luminous capabilities such as for a light projector application. In another example, a highly efficient optical detector is achievable through the combination of indirect and direct bandgap semiconductors.
The Trustees Of Columbia University In The City Of New York

Circuit design system and semiconductor circuit designed by using the system

A system and method may determine the operating parameters, such as voltages, of mos transistors within a circuit design by testing or simulation, for example and may identify a mos transistor operating with its drain voltage higher than its gate voltage in the circuit. The design system and method may substitute a smaller transistor, having a high-k dielectric layer, for the original transistor in the circuit design..

Semiconductor circuit device, oscillator, electronic apparatus, and moving object

A semiconductor circuit device includes an oscillation circuit, an output circuit that receives a signal output from an oscillation circuit and outputs an oscillation signal, a temperature sensing element, a characteristic adjustment circuit that adjusts characteristics of the oscillation circuit on the basis of a signal output from the temperature sensing element, and a first connection terminal that is electrically connected to the output circuit and via which the oscillation signal is output, in which a distance between the output circuit and the first connection terminal is shorter than a distance between the temperature sensing element and the first connection terminal in a plan view.. .
Seiko Epson Corporation

Semiconductor circuit device, oscillator, electronic apparatus, and moving object

A semiconductor circuit device includes an oscillation circuit, an output circuit that outputs a signal output from the oscillation circuit, a temperature sensing element, a characteristic adjustment circuit that adjusts characteristics of the oscillation circuit on the basis of a signal output from the temperature sensing element, a first wiring via which power is supplied to the output circuit, and a second wiring via which a reference voltage is supplied to the output circuit in which at least one of the first wiring and the second wiring overlaps the temperature sensing element in a plan view.. .
Seiko Epson Corporation

Circuit arrangement having charge storage units

A circuit arrangement includes a power semiconductor circuit, a first charge storage unit and a second charge storage unit. The first charge storage unit has first and second terminals, the second charge storage unit has first and second terminals, and the power semiconductor circuit has first and second terminals.
Infineon Technologies Ag

Lead-free solder, lead-free solder ball, solder joint using the lead-free solder and semiconductor circuit having the solder joint

Lead-free solder is characterized in that the lead-free solder contains ag of 1.2 mass % through 4.5 mass %, cu of 0.25 mass % through 0.75 mass %, bi of 1 mass % through 5.8 mass %, ni of 0.01 mass % through 0.15 mass % and sn as the remainder. These addition amounts allow to be further improved the common solder properties such as wettability, shear strength properties and the like, in addition to the thermal fatigue resistance..
Senju Metal Industry Co., Ltd.

Bypass converter

The present invention provides an apparatus for bypassing a phase current from a malfunctioning sub module in a converter. The converter includes multiple sub modules each having an energy storage unit, and at least one power semiconductor circuit which is connected in parallel to the energy storage unit and which includes a power semiconductor switch and free-wheeling diodes, wherein the sub modules are connected in series to each other.
Hyosung Corppration

Methods, systems, and computer program products for generating semiconductor circuit layouts

A method of generating electronic circuit layout data can include electronically providing data representing a first standard cell layout including a first scaling enhanced circuit layout in an electronic storage medium. The first scaling enhanced circuit layout included in the first standard cell layout can be electronically defined using a marker layer.

Semiconductor circuit, voltage detection circuit, and voltage determination circuit

The present disclosure provides a semiconductor circuit including: a pmos transistor that includes a first source connected to a power supply, a first drain, and a first gate to which a fixed potential is supplied; an output circuit that outputs a first output signal, which is a reset signal or a power-on signal, and that outputs a second output signal according to a potential of the first drain; a constant current source connected to the first drain; and an nmos transistor that includes a second source to which a fixed potential is supplied, a second drain connected to the first drain, and a second gate to which the second output signal from the output circuit is applied.. .
Lapis Semiconductor Co., Ltd.

Battery monitoring system, semiconductor circuit, line-breakage detection program, and line-breakage detection method

The present invention appropriately detects line-breakages in a signal line related to a battery connected to a discharge circuit for discharging. Namely, an initialization operation produces a state in which a capacitor (c1) is charged with the difference between the voltage of a signal line (vn) and a self-threshold voltage (vx), and a capacitor (c2) is charged with the difference between the voltage of a signal line (vn−1) and a self-threshold voltage (vx), in a comparison circuit (26).
Yazaki Corporation

Assembled-battery system, semiconductor circuit, and diagnostic method

This invention provides an assembled-battery system, a semiconductor circuit, and a diagnostic method that enable appropriate self-diagnosis of a measuring unit. Namely, an output value (a-b) output from an analog-to-digital converter through power-supply lines, a cell-selection switch, and a level shifter is summed with an output value (b-vss) obtained by a directly input reference voltage b being output from the analog-to-digital converter, and when the summed value is considered equal the reference voltage a—the voltage vss, it is diagnosed that an abnormality such as a breakdown has not occurred..
Lapis Semiconductor Co., Ltd.

Semiconductor device

A partition in lattice form forms a plurality of housing sections. A plurality of circuit blocks including a semiconductor block and a terminal base block are electrically connected one to another in a state of being housed in the housing sections to form a power semiconductor circuit.
Mitsubishi Electric Corporation

Semiconductor circuit, driving circuit of electro-optical device, and electronic apparatus

A semiconductor circuit includes a first circuit block, a second circuit block, and power wiring lines that supply a plurality of reference potentials. The first circuit block and the second circuit block are connected to a common power wiring line that is one of the power wiring lines and supplies a common reference potential.
Epson Imaging Devices Corporation

Methods of forming a semiconductor circuit element and semiconductor circuit element

The present disclosure provides methods of forming a semiconductor circuit element and a semiconductor circuit element, wherein the semiconductor circuit element includes a first semiconductor device with a first gate structure disposed over a first active region of a semiconductor substrate and a second semiconductor device with a second gate structure disposed over a second active region of the semiconductor substrate, the first gate structure comprising a ferroelectric material buried into the first active region before a gate electrode material is formed on the ferroelectric material and the second gate structure comprising a high-k material different from the ferroelectric material.. .

Magnetoresistive sensor module and manufacturing the same

In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement..

Power semiconductor drive circuit, power semiconductor circuit, and power module circuit device

A power semiconductor drive circuit includes a parallel circuit connected to a gate of a power semiconductor element and constituted by two transistors for setting gate resistance of the power semiconductor element; a gate voltage monitoring circuit connected to the gate of the power semiconductor element and the parallel circuit, wherein a monitoring voltage is set in the gate voltage monitoring circuit to monitor a gate voltage of the power semiconductor element; a signal delay circuit to delay an output signal of the gate voltage monitoring circuit; and a gate control circuit to change the magnitude of combined resistance of the parallel circuit based on an output signal output from the signal delay circuit.. .

Semiconductor memory device having pads

A semiconductor memory device includes a semiconductor circuit substrate having a chip pad forming region. A pair of data lines are formed on the semiconductor circuit substrate at one side of the chip pad region.

Gate-power-supply device and semiconductor circuit breaker using same

A gate-power-supply device is provided with an inverter circuit, a transformer, and rectifier circuits. The device includes secondary-side parallel capacitors, connected in parallel to secondary-side coils of the transformer, for cancelling inductance components of the secondary-side coils at the drive frequency of the inverter circuit.
Mitsubishi Electric Corporation

Semiconductor circuit, oscillator, electronic apparatus, and moving object

A semiconductor circuit includes an oscillation circuit; an output circuit that receives a first oscillation signal from the oscillation circuit and outputs a second oscillation signal; a dc circuit that receives a voltage based on a power supply voltage and outputs at least one of a dc voltage and a dc current; and a semiconductor substrate on which the oscillation circuit, the output circuit, and the dc circuit are formed. In a plan view of the semiconductor substrate, the dc circuit is disposed between the oscillation circuit and the output circuit..
Seiko Epson Corporation

Semiconductor device and manufacturing thereof

A semiconductor device includes a substrate having a top surface. A semiconductor circuit defines a circuit area on the top surface of the substrate.
Intel Deutschland Gmbh

Semiconductor device and manufacturing the same

A connection portion connects a copper-based first wiring layer with a copper-based second wiring layer arranged on the upper side of a first diffusion barrier film. The first diffusion barrier film includes a first opening region formed in a semiconductor circuit region that is a partial region in a two-dimensional view and a second opening region formed as an opening region different from the first opening region in a two-dimensional view.
Renesas Electronics Corporation

Optical module

An optical module includes a circuit board, a photoelectric conversion element mounted on the circuit board, an optical connector for optically connecting the photoelectric conversion element and an optical fiber, a semiconductor circuit element mounted on the circuit board and electrically connected to the photoelectric conversion element, a pressing member for pressing and fixing the optical connector to the circuit board, and a supporting member for supporting the pressing member. The supporting member includes a heat-absorbing surface and a heat-dissipating surface.
Hitachi Metals, Ltd.

Integrated circuit device including polycrystalline semiconductor film and manufacturing the same

An ic device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal.



Semiconductor Circuit topics:
  • Semiconductor
  • Semiconductor Circuit
  • Circuit Board
  • Reference Voltage
  • Semiconductor Substrate
  • Optical Fiber
  • Regenerate
  • Conductive Elements
  • Concentrated
  • Automation
  • Electronic Design Automation
  • Simulation
  • Electric Conversion
  • Shallow Trench Isolation
  • Photoelectric Conversion


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    This listing is a sample listing of patent applications related to Semiconductor Circuit for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Semiconductor Circuit with additional patents listed. Browse our RSS directory or Search for other possible listings.


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