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Sapphire patents



      
           
This page is updated frequently with new Sapphire-related patents. Subscribe to the Sapphire RSS feed to automatically get the update: related Sapphire RSS feeds.

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Date/App# patent app List of recent Sapphire-related patents
04/17/14
20140106647
 Multifunctional substrate polishing and burnishing device and polishing and burnishing method thereof patent thumbnailnew patent Multifunctional substrate polishing and burnishing device and polishing and burnishing method thereof
The invention, involving grinding and polishing flat processing and thinning processing of hard and brittle materials such as silicon wafer, sapphire substrate and the glass substrate, belongs to ultra-precision machining technical field and provides a multifunction substrate grinding and polishing device and method for the substrate grinding and polishing, which could be used in the grinding and polishing process of flat substrate such as ceramics, metal and composite materials. The grinding and polishing of substrate are processed in three ways: axial plunge grinding and polishing, radial plunge grinding and polishing and back grinding and polishing of wafer with outer rim.
04/17/14
20140103362
 Composite substrates, a method of producing the same, a method of producing functional layers made of nitrides of group 13 elements, and functional devices patent thumbnailnew patent Composite substrates, a method of producing the same, a method of producing functional layers made of nitrides of group 13 elements, and functional devices
A composite substrate 10 includes a sapphire body 1a, a seed crystal film 4 composed of gallium nitride crystal and provided on a surface of the sapphire body, and a gallium nitride crystal layer 7 grown on the seed crystal film 4 and having a thickness of 200 μm or smaller. Voids 5 are provided along an interface between the sapphire body 1a and the seed crystal film 4 in a void ratio of 4.5 to 12.5 percent..
04/03/14
20140094094
 Modified microgrinding process patent thumbnailModified microgrinding process
A method of forming a substrate is performed by grinding a substrate using abrasives so that both major surfaces of the substrate achieve desired flatness, smoothness, or both. In an embodiment, a coarser abrasive is used to grind one major surface, while a finer abrasive is simultaneously used to grind the other major surface.
04/03/14
20140091993
 Monolithic full-color led micro-display on an active matrix panel manufactured using flip-chip technology patent thumbnailMonolithic full-color led micro-display on an active matrix panel manufactured using flip-chip technology
A high-resolution, active matrix (am) programmed monolithic light emitting diode (led) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an led micro-array and an am panel, and combining the resulting led micro-array and am panel using the flip-chip technology.
04/03/14
20140090592
 Continuous sapphire growth patent thumbnailContinuous sapphire growth
Systems and methods for continuous sapphire growth are disclosed. One embodiment may take the form of a method including feeding a base material into a crucible located within a growth chamber, heating the crucible to melt the base material and initiating crystalline growth in the melted base material to create a crystal structure.
03/27/14
20140087545
 Method for producing a group iii nitride semiconductor patent thumbnailMethod for producing a group iii nitride semiconductor
The surface of a sapphire substrate having a c-plane main surface is patterned by icp dry etching. The patterned sapphire substrate is thermally treated in a hydrogen or nitrogen atmosphere at a temperature of less than 700° c.
03/27/14
20140087197
 Oleophobic coating on sapphire patent thumbnailOleophobic coating on sapphire
A component comprises a substrate having an alumina base layer, a transition layer, and a surface coating. The transition layer comprises alumina and silica, and the surface coating preferentially bonds to the silica as compared to the alumina..
03/27/14
20140082947
 Method for creating atomically sharp edges on objects made of crystal material patent thumbnailMethod for creating atomically sharp edges on objects made of crystal material
A process to make atomically sharp cutting devices is described. The process may provide for a cost effective and efficient technique of producing the atomically sharp cutting devices made from single crystal material such as, for example, sapphire, silicon carbide, silicon, and the like.
03/20/14
20140080081
 Heat exchangers in sapphire processing patent thumbnailHeat exchangers in sapphire processing
Systems and methods are presented for efficient heating during production of corundum. One embodiment takes the form of a system for processing corundum including a first furnace and a second furnace.
03/20/14
20140079363
 Double cladding crystal fiber and manufacturing method thereof patent thumbnailDouble cladding crystal fiber and manufacturing method thereof
The present invention relates to a double cladding crystal fiber and manufacturing method thereof, in which growing an yag or a sapphire into a single crystal fiber by lhpg method, placing the single crystal fiber into a glass capillary for inner cladding, placing the single crystal fiber together with the glass capillary for inner cladding into a glass capillary for outer cladding in unison, heating the glass capillary for inner cladding and outer cladding by the lhpg method to attach to the outside of the single crystal fiber, and thus growing into a double cladding crystal fiber. When the present invention is applied to high power laser, by using the cladding pumping scheme, the high power pumping laser is coupled to the inner cladding layer, so the problems of heat dissipation and the efficiency impairment due to energy transfer up-conversion of high power laser are mitigated..
03/20/14
20140077223
Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same
A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°.. .
03/20/14
20140076299
Multi-step cutting process
Methods related to efficient processing of sapphire are discussed which are expected to both speed manufacture of corundum for applications and make the use of conundrum cost effective. In particular, one embodiment may take the form of a method of cutting a hard transparent material having a polished surface.
03/13/14
20140072010
Ti: sapphire crystal fiber, manufacturing method thereof, and wide band light source using the same
The present invention relates to a crystal fiber, and more particularly to a ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The ti: sapphire single crystal is grown by means of laser-heated pedestal growth (lhpg) method into a crystal fiber of a predetermined diameter.
03/13/14
20140070119
Optical barriers, waveguides, and methods for fabricating barriers and waveguides for use in harsh environments
Electromagnetic radiation barriers and waveguides, including barriers and waveguides for light, are disclosed. The barriers and waveguides are fabricated by directing charged particles, for example, ions, into crystalline substrates, for example, single-crystal sapphire substrates, to modify the crystal structure and produce a region of varying refractive index.
03/06/14
20140061661
Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element
A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface has an inclined angle of between 53° and 59° from a bottom surface of the projection, and wherein the side surface is crystal-growth-suppressed surface on which growth of nitride semiconductor is suppressed relative to the substrate surface located between the adjacent projections.. .
03/06/14
20140060420
Ti: sapphire crystal fiber, manufacturing method thereof, and wide band light source using the same
The present invention relates to a crystal fiber, and more particularly to a ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The ti: sapphire single crystal is grown by means of laser-heated pedestal growth (lhpg) method into a crystal fiber of a predetermined diameter.
02/27/14
20140057533
Methods of polishing sapphire surfaces
Described herein are methods for polishing sapphire surfaces using compositions comprising colloidal silica, wherein the colloidal silica has a broad particle size distribution.. .
02/27/14
20140057532
Methods of polishing sapphire surfaces
Described herein are methods for polishing sapphire surfaces using compositions comprising colloidal silica, wherein the colloidal silica has a broad particle size distribution.. .
02/27/14
20140054753
Nano-meshed structure pattern on sapphire substrate by metal self-arrangement
The present disclosure provides a nano-meshed patterned substrate and a method of forming the same. In an embodiment, a metal layer is formed on a substrate, and a heat treatment is performed on the substrate and the metal layer so that the metal layer is transformed into a nano-meshed metal structure.
02/27/14
20140054639
Method of fabricating vertical structure leds
A method of fabricating semiconductor devices, such as gan leds, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques.
02/27/14
20140054618
Light-emitting diode devices
An led device includes an led chip having a sapphire substrate, a first-type semiconductor layer on the substrate, a second-type semiconductor layer disposed on the first-type semiconductor layer, a first via hole passing through the sapphire substrate and the first-type semiconductor layer, a second via hole passing through the sapphire substrate, and an insulation layer coated on an inner wall of the first via hole; a transparent conductive layer made of electrically conductive material and formed on the second-type semiconductor layer; a cover layer formed on the transparent conductive layer; electrical conductors, each disposed within one of the via holes, wherein the electrical conductor in the first via hole is electrically connected to the second-type semiconductor layer and the electrical conductor in the second via hole is electrically connected to the first-type semiconductor layer; and two linkers for connection to external circuitry, formed on a surface of the sapphire.. .
02/27/14
20140054605
Composite substrates, light emitting devices and a method of producing composite substrates
A plurality of protrusions 3 are provided on a c-face 2a of a sapphire body 2. An underlying layer 5 made of gallium nitride is then grown by vapor phase epitaxy process on the c-face 2a.
02/20/14
20140051335
Abrasive and polishing composition
Provided is a polishing composition containing an abrasive and water. The abrasive content in the polishing composition is no less than 0.1% by mass.
02/20/14
20140048721
Ultraviolet light generating target, electron-beam-excited ultraviolet light source, and method for producing ultraviolet light generating target
An ultraviolet light generating target 20 includes a substrate 21 made of sapphire, quartz, or rock crystal; and a light-emitting layer 22 that is provided on the substrate 21 and that generates ultraviolet light upon receiving an electron beam. The light-emitting layer 22 includes powdered or granular pr:luag crystals.
02/13/14
20140044925
Protective cover made with sapphire and method of manufacturing same
A protective cover includes a substrate, a pattern layer, and an oil resistance layer. The substrate is made of sapphire and includes an upper surface and a lower surface.
02/06/14
20140034853
Ultraviolet light generating target, electron-beam-excited ultraviolet light source, and method for producing ultraviolet light generating target
An ultraviolet light generating target 20 includes a substrate 21 made of sapphire, quartz or rock crystal; and a pr:luag polycrystalline film 22, provided on the substrate 21, that generates ultraviolet light upon receiving an electron beam. By using a pr:luag polycrystal as the target, the ultraviolet light generating efficiency can be increased more remarkably than when a pr:luag single crystal film is used..
01/30/14
20140030870
Sos substrate having low surface defect density
Method of making a bonded sos substrate with a semiconductor film on or above a sapphire substrate by implanting ions from a surface of the semiconductor substrate to form an ion-implanted layer; activating at least a surface of one of the sapphire substrate and the semiconductor substrate from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of from 50° c. To 350° c.; heating the bonded substrates at a maximum temperature of from 200° c.
01/30/14
20140030443
Sapphire window
Methods for creating sapphire windows are provided herein. In particular, one embodiment may take the form of a method of manufacturing sapphire windows.
01/30/14
20140029086
Method for polarizing a terahertz electromagnetic wave using a polarizer
This disclosure provides a new method for polarizing an electromagnetic wave having a frequency of not less than 0.1 thz and not more than 0.8 thz using a polarizer. The method comprises: a step (a) of preparing the polarizer; wherein the polarizer comprises a sapphire single crystalline layer and a caxcoo2 crystalline layer, the caxcoo2 crystalline layer is stacked on the sapphire single crystalline layer, a surface of the caxcoo2 crystalline layer has a (010) surface orientation, and the caxcoo2 crystalline layer has a thickness of not less than 2 micrometers and not more than 20 micrometers; and a step (b) of irradiating the polarizer with the electromagnetic wave having a frequency of not less than 0.1 thz and not more than 0.8 thz to output an output wave having only a component parallel to a c-axis direction of the sapphire single crystalline layer..
01/23/14
20140023430
Attachment techniques
Techniques for attachment of sapphire substrates with other materials and the resulting structures are provided. One embodiment may take the form of an attachment method including creating an aperture within a sapphire substrate and filling the aperture with an attachment material.
01/16/14
20140017479
Method of forming an r-plane sapphire crystal
A method and apparatus for the production of r-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting an absence of lineage..
01/16/14
20140017447
Method for forming identification marks on refractory material single crystal substrate, and refractory material single crystal substrate
An identification mark formation method for forming an identification mark on a refractory material single crystal substrate that is made of one selected from the group consisting of sapphire, gallium nitride, aluminum nitride, diamond, boron nitride, zinc oxide, gallium oxide, and titanium dioxide is disclosed. The method includes: (a) scanning a principal surface of the refractory material single crystal substrate with a laser beam at a first energy density such that a groove is formed in the principal surface of the refractory material single crystal substrate, thereby forming an identification mark in the principal surface of the refractory material single crystal substrate; and (b) scanning an inside of the groove of the refractory material single crystal substrate with a laser beam at a second energy density that is lower than the first energy density..
01/16/14
20140016065
Liquid crystal display with sapphire substate
A liquid crystal displays includes a common electrode layer, a pixel electrode layer, a liquid crystal layer, an upper polarizer, a lower polarizer, a color filter, and a protection glass. The liquid crystal layer is positioned between the common electrode layer and the pixel electrode layer.
01/09/14
20140008667
Method for manufacturing a monolithic led micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic led micro-display
A high-resolution, active matrix (am) programmed monolithic light emitting diode (led) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an led micro-array and an am panel, and combining the resulting led micro-array and am panel using the flip-chip technology.
01/02/14
20140002347
Touch panel with sapphire substrate and touch screen
A touch panel includes a touch substrate and a touch layer. A touch substrate is made of sapphire.
01/02/14
20140001153
Polishing slurry and polishing method thereof
The present invention provides a polishing technique capable of polishing, at a high speed, a substrate containing al and having high hardness, such as single-crystal sapphire substrate, and capable of providing a polished surface of high accuracy. The present invention relates to a polishing slurry for polishing a substrate containing aluminum, comprising abrasive grains, an inorganic boron compound having a solubility in water at 20° c.


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Sapphire topics: Semiconductor, Gallium Nitride, Low Refractive Index, Ultraviolet, Ultraviolet Light, Semiconductor Substrate, Crystallin, Buffer Layer, Empirical Formula, Silicon Carbide, Second Wave, Potassium Titanyl Phosphate, Led Device

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This listing is a sample listing of patents related to Sapphire for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Sapphire with additional patents listed. Browse our RSS directory or Search for other possible listings.
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