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Positive Resist
High Resolution
Photoacid Generator
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Propionic Acid
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Positive Resist patents



      
           
This page is updated frequently with new Positive Resist-related patents. Subscribe to the Positive Resist RSS feed to automatically get the update: related Positive RSS feeds.

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Date/App# patent app List of recent Positive Resist-related patents
03/27/14
20140087294
 Chemically amplified positive resist composition and pattern forming process patent thumbnailChemically amplified positive resist composition and pattern forming process
In a chemically amplified positive resist composition comprising (a) a base resin, (b) a photoacid generator, (c) a thermal crosslinker, and (d) an organic solvent, the base resin is a specific polymer and the crosslinker is a siloxane compound. A coating of the composition is readily developable in aqueous alkaline solution.
03/13/14
20140072905
 Positive resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition patent thumbnailPositive resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition
Wherein r represents a monovalent organic group; a represents a group having a polycyclic hydrocarbon ring structure or a group having a polycyclic heterocyclic structure; and * represents a bonding position to an oxygen atom of the phenolic hydroxyl group.. .
03/13/14
20140071411
 Developing treatment apparatus and developing treatment method patent thumbnailDeveloping treatment apparatus and developing treatment method
The present invention is a developing treatment apparatus for performing development by supplying a developing solution to a substrate having a front surface coated with a positive resist or a negative resist and then subjected to exposure wherein a movable cup is raised to introduce one of scattering developing solutions for the positive and negative resists into an inner peripheral flow path of a cup and the movable cup is lowered to introduce the other of scattering developing solutions for the positive and negative resists into an outer peripheral flow path of the cup, and the developing solution introduced into the inner peripheral flow path and the developing solution introduced into the outer peripheral flow path are separately drained.. .
02/13/14
20140045122
 Positive resist composition and patterning process patent thumbnailPositive resist composition and patterning process
A positive resist composition comprises a polymer having a carboxyl group substituted with an acid labile group having formula (1) wherein r1 and r2 are alkyl or alkenyl, r3 and r4 are a single bond, methylene, ethylene or propylene, r5 and r6 are hydrogen or alkyl. The composition has a high dissolution contrast, high resolution, and suppressed acid diffusion rate, and forms a pattern of good profile and minimal edge roughness..
12/26/13
20130344442
 Polymer, positive resist composition and patterning process patent thumbnailPolymer, positive resist composition and patterning process
A polymer comprising recurring units of butyrolactone (meth)acrylate, recurring units having a carboxyl or phenolic group which is substituted with an acid labile group, and recurring units having a phenol group or an adhesive group in the form of 2,2,2-trifluoro-1-hydroxyethyl is quite effective as a base resin for resist. A positive resist composition comprising the polymer is improved in such properties as a contrast of alkali dissolution rate before and after exposure, acid diffusion suppressing effect, resolution, and profile and edge roughness of a pattern after exposure..
12/26/13
20130343791
 Heater and image heating device including the same patent thumbnailHeater and image heating device including the same
In order to suppress excessive temperature rise at a non-sheet-passing region while suppressing the deterioration of fixability in case of heating small size sheets, a heater includes a first heat-generation line and a second heat-generation line, which are independently controllable, wherein the first heat-generation line is configured so that a plurality of heat-generation resistors having positive resistance-temperature characteristics is electrically connected in parallel to each other between a first electro-conductive element and a second electro-conductive element, and the heat-generation resistors are adjusted so that a heat-generation amount per unit length of the first heat-generation line in a lengthwise direction of the heater decreases from a recording material conveyance reference towards a end portion in the lengthwise direction, and an image heating device having the heater.. .
12/26/13
20130343790
 Heater and image heating device having same heater patent thumbnailHeater and image heating device having same heater
The present invention is directed to providing a heater in which uniformity of a temperature distribution in a widthwise direction of the heater can be improved while inhibiting a temperature rise of a non-sheet-passing part, and an image heating device equipped with the heater. In a first heat-generation line and a second heat-generation line, a plurality of heat-generation resistors including positive resistance-temperature characteristics between two electro-conductive elements provided on a substrate along the lengthwise direction of the substrate are connected in parallel.
12/19/13
20130337384
 Positive resist composition for immersion exposure and pattern forming method patent thumbnailPositive resist composition for immersion exposure and pattern forming method
A positive resist composition for immersion exposure includes the following (a) to (d): (a) a resin capable of decomposing by an action of an acid to increase a solubility of the resin in an alkali developer; (b) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (c) a resin having at least either one of a fluorine atom and a silicon atom; and (d) a mixed solvent containing at least one kind of a solvent selected from the group consisting of solvents represented by any one of the following formulae (s1) to (s3) as defined in the specification, in which a total amount of the at least one kind of the solvent is from 3 to 20 mass % based on all solvents of the mixed solvent (d).. .
12/05/13
20130323646
 Resist composition and patterning process patent thumbnailResist composition and patterning process
A polymer is obtained from copolymerization of a unit having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group with a hydroxyphenyl methacrylate unit having one acyl, acyloxy or alkoxycarbonyl group. The polymer is useful as a base resin in a positive resist composition.
11/28/13
20130314687
 Transverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device patent thumbnailTransverse electric-field type liquid crystal display device, process of manufacturing the same, and scan-exposing device
A process of manufacturing a liquid crystal display device of transverse electric-field type, wherein a halftone photomask which is used to form a photoresist pattern has a fully light-shielding area preventing uv irradiation of a portion of an active matrix substrate in which a thin-film transistor element is to be formed, so that the photoresist pattern includes a positive resist portion which has a first thickness and which is formed on the above-indicated portion of the substrate. The halftone mask further has a fully light-transmitting area which permits fully uv transmission therethrough to provide the photoresist pattern with a resist-free area which corresponds to a portion of the substrate in which a contact hole serving as a third connection portion connecting an external scanning-line driver circuit and a scanning-line terminal portion through a junction electrode is to be formed.
10/31/13
20130288180
Monomer, polymer, positive resist composition and patterning process
A polymer for use in resist compositions is obtained from a monomer having formula (1) wherein r1 is methyl, ethyl, propyl, vinyl or ethynyl, the circle designates c3-c12 cycloalkyl, a combination wherein r1 is ethyl and the circle is cyclohexyl being excluded, r2 is h or c1-c4 alkyl, and m is 1 to 4.. .
08/22/13
20130214755
Stabilization system and method for input oscillation
A system and method for controlling power supply input filter oscillations is provided. The method includes utilizing a converter power circuit to generate a positive input resistance to counteract input filter oscillations, which are generated in response to normal converter negative input impedance and current-mode control operation.
08/15/13
20130209936
Patterning process and resist composition
A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, peb, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a c3-c8 alcohol and an optional c6-c12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, peb, and development to form a second resist pattern.. .
05/23/13
20130129988
Chemically amplified positive resist composition and pattern forming process
A chemically amplified positive resist composition comprising (a) 100 pbw of a base resin which is normally alkali insoluble or substantially insoluble, (b) 0.05-20 pbw of a photoacid generator, (c) 0.1-50 pbw of a thermal crosslinker, and (d) 50-5,000 pbw of an organic solvent is coated to form a thick film having a high sensitivity and resolution.. .
05/02/13
20130108964
Chemically amplified positive resist composition for arf immersion lithography and pattern forming process
A chemically amplified positive resist composition comprising (a) a triarylsulfonium salt of 2,3,3,3-tetrafluoro-2-(1,1,2,2,3,3,3-heptafluoropropoxy)propionic acid, (b) an acid generator, (c) a base resin, and (d) an organic solvent is suited for arf immersion lithography. The sulfonium salt is highly hydrophobic and little leached out in immersion water.
04/25/13
20130101936
Positive resist composition and patterning process
A positive resist composition comprising (a) a polymer comprising recurring units containing an acid labile group, recurring units having a lactone ring, and recurring units having an oxirane ring, the polymer being adapted to increase alkaline dissolution under the action of an acid, (b) a photoacid generator, and (c) a solvent forms a fine pattern with improved lwr, improved mef, rectangular profile, and collapse resistance.. .
04/04/13
20130084531
Method of producing organic electroluminescence display device
Provided is a method of producing an organic electroluminescence display device including patterning by photolithography, the method including: forming an organic compound layer containing a low-molecular organic electroluminescence material and an intermediate layer for protecting the organic compound layer; forming a resist layer on the intermediate layer; irradiating the resist layer with ultraviolet light through a photomask to partially remove the resist layer in a region irradiated with the ultraviolet light; and removing the organic compound layer in a region from which the resist layer is removed, in which the resist layer includes a layer formed of a positive resist, and the intermediate layer includes a layer formed of a high-molecular organic material having a chain structure, capable of being selectively dissolved in a solvent that dissolves the organic compound layer.. .
04/04/13
20130084529
Positive resist composition and patterning process
A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1), (2) or (3) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a reduced acid diffusion rate, and forms a pattern with good profile, minimal edge roughness, and etch resistance. In formula (1), r1, r2, r5, r6, r8, and r9 are alkyl, aryl, or alkenyl, r3, r4, r7, r10, and r11 are hydrogen, alkyl, alkoxy, acyloxy, halogen, cyano, nitro, hydroxyl or trifluoromethyl, m is methylene or ethylene, r is a single bond or linking group..
04/04/13
20130084528
Positive resist composition and patterning process
A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a reduced acid diffusion rate, and forms a pattern with good profile, minimal edge roughness, and etch resistance. In formula (1), r1 is methylene or ethylene, r2 is alkyl, aryl, or alkenyl, which may contain oxygen or sulfur, r3 is fluorine or trifluoromethyl, and m is an integer of 1 to 4..
04/04/13
20130084527
Positive resist composition and patterning process
A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a reduced acid diffusion rate, and forms a pattern with good profile, minimal edge roughness, and etch resistance. In formula (1), r1 and r2 each are alkyl, aryl, or alkenyl, which may contain oxygen or sulfur, r3 is fluorine or trifluoromethyl, and m is an integer of 1 to 5..
03/14/13
20130065179
Positive resist composition and patterning process
There is disclosed a positive resist composition comprising (a) a specific resin (b) a photo acid generator, (c) a basic compound, and (d) a solvent. There can be a positive resist composition having, in a photolithography using a high energy beam such as an arf excimer laser beam as a light source, an excellent resolution, especially excellent depth of focus (dof) characteristics with an excellent pattern profile, and in addition, in formation of a contact hole pattern, giving a pattern having excellent circularity and high rectangularity; and a patterning process using this positive resist composition..
03/07/13
20130057618
Method of manufacturing a liquid ejection head and liquid ejection head
Provided is a method of manufacturing a liquid ejection head, including: forming a covering resin layer including a photocationic polymerization initiator and a cationically polymerizable resin on a substrate having provided thereon an energy generating element for generating energy for ejecting liquid and a solid layer which is formed of a positive resist and serves as a pattern for a liquid flow path which communicates with a liquid ejection orifice for ejecting the liquid; exposing the covering resin layer to development to form the liquid ejection orifice; and removing the solid layer to form the liquid flow path, in which the covering resin layer includes, as a cationic polymerization inhibitor, an amine compound having a perfluoroalkyl group. Also provided is a liquid ejection head obtained by the method..
03/07/13
20130056654
Positive resist composition and patterning process
The invention provides a positive resist composition comprising, as base resins contained therein, (a) a polymer having a weight-average molecular weight of 1000 to 500000 and containing a repeating unit which contains a structure having a hydrogen atom of a carboxyl group thereof substituted with an acid-labile group having a cyclic structure and (b) a novolak resin of a substituted or an unsubstituted fluorescein, and in addition, a photo acid generator. There can be provided a positive resist composition having an appropriate absorption to form a pattern on a highly reflective substrate with excellent pattern profile after light exposure, adhesion, implantation characteristics onto a non-planar substrate, and in addition, ion implantation resistance at the time of ion implantation; and to provide a patterning process..
03/07/13
20130056653
Positive resist composition and patterning process
The invention provides a positive resist composition comprising, as base resins contained therein, (a) a polymer having a weight-average molecular weight of 1000 to 500000 and containing a repeating unit which contains a structure having a hydrogen atom of a carboxyl group thereof substituted with an acid-labile group having a cyclic structure and (b) a novolak resin of a substituted or an unsubstituted naphtholphthalein, and in addition, a photo acid generator. There can be provided a positive resist composition having an appropriate absorption to form a pattern on a highly reflective substrate, excellent characteristics in adhesion and implantation onto a non-planar substrate, a good pattern profile after light exposure, and an ion implantation resistance at the time of ion implantation; and a patterning process..
02/28/13
20130053518
Positive resist composition, method of forming resist pattern using the same, and fluorine-containing polymeric compound
A fluorine-containing polymeric compound which contains a structural unit (f1) that is decomposable in an alkali developing solution as a block copolymer portion, a base component (a) that exhibits increased solubility in an alkali developing solution under the action of acid, and an acid generator component (b) that generates acid upon exposure.. .
02/28/13
20130052568
Resist pattern forming method, resist pattern, positive resist composition, nanoimprint mold and photomask
A resist pattern forming method includes: in the following order, (1) a step of forming a film on a substrate by using a positive resist composition; (2) a step of exposing the film; and (4) a step of performing development by using an alkali developer after the exposing, wherein the positive resist composition contains (a) a polymer compound having a repeating unit represented by the following formula (i) as defined in the specification, a thickness of the film formed in the step (1) is from 15 to 40 nm, and an alkali component concentration in the alkali developer is from 0.5 to 1.1 mass %.. .
02/21/13
20130045444
Positive resist composition and patterning process
There is disclosed a positive resist composition comprising (a) a resin having repeating units shown by the following general formulae (1) and (2) as repeating units that contain acid labile groups and being capable of increasing its alkaline solubility by an acid, (b) a photoacid generator, (c) a compound shown by the following general formula (3), and (d) a solvent. There can be a positive resist composition having high resolution, and at the same time giving an excellent pattern profile; and a patterning process in which an immersion lithography is carried out using a formed top coat..
02/07/13
20130034813
Chemically amplified positive resist composition for arf immersion lithography and pattern forming process
A chemically amplified positive resist composition comprising (a) a sulfonium salt of 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropionic acid, (b) an acid generator, (c) a base resin, and (d) an organic solvent is suited for arf immersion lithography. The carboxylic acid sulfonium salt is highly hydrophobic and little leached out in immersion water.
01/31/13
20130029269
Positive resist composition and pattterning process
A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness. In formula (1), a is —(cr22)m—, b is —(cr52)n—, r2 and r5 are hydrogen or alkyl, m and n are 1 or 2, r3 is alkyl, alkenyl, alkynyl or aryl, r6 is alkyl, alkoxy, alkanoyl, alkoxycarbonyl, hydroxyl, nitro, aryl, halogen, or cyano, and p is 0 to 4..
01/31/13
20130026044
Chemically amplified positive resist composition and patterning process
A chemically amplified positive resist composition is provided comprising an alkali-insoluble or substantially alkali-insoluble polymer having an acid labile group-protected acidic functional group, an alkyl vinyl ether polymer, a photoacid generator, and a benzotriazole compound in a solvent. The composition forms on a substrate a resist film of 5-100 μm thick which can be briefly developed to form a pattern at a high sensitivity and a high degree of removal or dissolution to bottom..


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Positive Resist topics: Positive Resist, High Resolution, Photoacid Generator, High Contrast, Cycloalkyl, Propionic Acid, Ion Implant, Crosslinker, Implantation, Tetrafluoro, Organic Electroluminescence, Ultraviolet, Ultraviolet Light, Excimer Laser, Solubility

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