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Plasma patents



      
           
This page is updated frequently with new Plasma-related patent applications. Subscribe to the Plasma RSS feed to automatically get the update: related Plasma RSS feeds. RSS updates for this page: Plasma RSS RSS


Two-stage plasma process for converting waste into fuel gas and apparatus therefor

Pyrogenesis Canada

Two-stage plasma process for converting waste into fuel gas and apparatus therefor

Seed layers and process of manufacturing seed layers

Amg Idealcast Solar

Seed layers and process of manufacturing seed layers

Date/App# patent app List of recent Plasma-related patents
01/29/15
20150032245
 Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching patent thumbnailnew patent Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
A method includes receiving a voltage and current measured at an output of an rf generator of a first plasma system and calculating a first model etch rate based on the voltage and current, and a power. The method further includes receiving a voltage and current measured at an output of the rf generator of a second plasma system, determining a second model etch rate based on the voltage and current at the output of the rf generator of the second plasma system, and comparing the second model etch rate with the first model etch rate.
Lam Research Corporation
01/29/15
20150031895
 Copper-catalysed ligation of azides and acetylenes patent thumbnailnew patent Copper-catalysed ligation of azides and acetylenes
A copper catalyzed click chemistry ligation process is employed to bind azides and terminal acetylenes to provide 1,4-disubstituted 1,2,3-triazole triazoles. The process comprises contacting an organic azide and a terminal alkyne with a source of reactive cu(i) ion in human blood plasma to form by cycloaddition a 1,4-disubstituted 1,2,3-triazole.
The Scripps Research Institute
01/29/15
20150031651
 Prodrugs of vitamine k patent thumbnailnew patent Prodrugs of vitamine k
The invention relates to prodrugs of vitamin k2, in particular prodrugs of mk-7 in which the diketone is converted to a monosubstituted or disubstituted ester type derivative. These compounds are shown to give mk-7 in plasma..
Kappa Bioscience As
01/29/15
20150031218
 Film forming process and film forming apparatus patent thumbnailnew patent Film forming process and film forming apparatus
In a film forming apparatus (10), plasma-assisted ald sequences are carried out to form a nitride film on a substrate (w) through the nitration of the silicon (si) resulting from dichlorosilane (dcs), and then the first to fourth gas-feeding processes and plasma-feeding processes are successively carried out as plasma-assisted post-treatment. The gas to be fed in the first to fourth gas-feeding processes in the plasma-assisted post-treatment is a modifier gas consisting of either a gas selected from among n2, nh3, ar and h2 or a mixed gas obtained by suitably mixing some of these gases.
Tokyo Electron Limited
01/29/15
20150031213
 Plasma processing apparatus and plasma processing method patent thumbnailnew patent Plasma processing apparatus and plasma processing method
A plasma processing method is provided for a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. The method includes adjusting openings of the upstream-side expansion valves and openings of the downstream-side expansion valves so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein..
Hitachi High-technologies Corporation
01/29/15
20150031202
 Method for manufacturing semiconductor wafers patent thumbnailnew patent Method for manufacturing semiconductor wafers
The invention relates to a method for manufacturing a semiconductor wafer including a conductive via extending from a main surface of the wafer, said the via having a shape factor greater than five, the wafer including a dielectric layer, the method including: producing, by means of deep etching, at least one recess in the semiconductor wafer, the recess extending from the main surface of the wafer and having a shape factor greater than five, the recess including a side surface; forming at least one dielectric layer in the recess, including two treatments in a controlled-pressure reactor, one of said the treatments including the chemical vapor deposition, at sub-atmospheric pressure, of a dielectric onto the side surface of the recess, the chemical deposition being carried out at a temperature lower than 400° c. And at a pressure greater than 100 torr in the reactor, and another of the treatments including the plasma-enhanced chemical vapor deposition of a dielectric onto the side surface of the recess, the chemical deposition being carried out at a pressure of less than 20 torr in the reactor; and filling the recess with a conductive material, thus forming a via..
Altatech Semiconductor
01/29/15
20150031199
 Method of manufacturing a spacer for dual gate electronic memory cell and associated electronic memory cell patent thumbnailnew patent Method of manufacturing a spacer for dual gate electronic memory cell and associated electronic memory cell
A method of manufacturing a spacer for an electronic memory including a substrate; a first gate structure; a stack including a plurality of layers whereof at least one of the layers is able to store electric charges, the method including depositing a spacer material layer, at least on the area covered by the stack; ion beam machining the spacer material layer, the ion beam machining being carried out with controlled stopping so as to preserve a residual portion of the thickness of the spacer material layer covering the stack; plasma etching the residual portion of the thickness of the spacer material layer.. .
Commissariat A L'energie Atomique Et Aux Energies Alternatives
01/29/15
20150031194
 Method for designing antenna cell that prevents plasma induced gate dielectric damage in semiconductor integrated circuits patent thumbnailnew patent Method for designing antenna cell that prevents plasma induced gate dielectric damage in semiconductor integrated circuits
An antenna cell for preventing plasma enhanced gate dielectric failures, is provided. The antenna cell design utilizes a polysilicon lead as a gate for a dummy transistor.
Taiwan Semiconductor Manufacturing Co., Ltd.
01/29/15
20150031190
 Process for thinning the active silicon layer of a substrate of new patent Process for thinning the active silicon layer of a substrate of "silicon on insulator" (soi) type
The invention relates to a process for thinning the active silicon layer of a substrate, which comprises an insulator layer between the active layer and a support, this process comprising one step of sacrificial thinning of active layer by formation of a sacrificial oxide layer by sacrificial thermal oxidation and deoxidation of the sacrificial oxide layer. The process is noteworthy in that it comprises: a step of forming a complementary oxide layer, on the active layer, using an oxidizing plasma, this layer having a thickness profile complementary to that of oxide layer, so that the sum of the thicknesses of the oxide layer and of the sacrificial silicon oxide layer are constant over the surface of the treated substrate, a step of deoxidation of this oxide layer, so as to thin active layer by a uniform thickness..
Soitec
01/29/15
20150031189
 Mechanisms for cleaning substrate surface for hybrid bonding patent thumbnailnew patent Mechanisms for cleaning substrate surface for hybrid bonding
Embodiments of mechanisms for cleaning a surface of a semiconductor wafer for a hybrid bonding are provided. The method for cleaning a surface of a semiconductor wafer for a hybrid bonding includes providing a semiconductor wafer, and the semiconductor wafer has a conductive pad embedded in an insulating layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
01/29/15
20150031187
new patent

Methods for forming a round bottom silicon trench recess for semiconductor applications


Embodiments of the present invention provide methods to etching a recess channel in a semiconductor substrate, for example, a silicon containing material. In one embodiment, a method of forming a recess structure in a semiconductor substrate includes transferring a silicon substrate into a processing chamber having a patterned photoresist layer disposed thereon exposing a portion of the substrate, providing an etching gas mixture including a halogen containing gas and a cl2 gas into the processing chamber, supplying a rf source power to form a plasma from the etching gas mixture, supplying a pulsed rf bias power in the etching gas mixture, and etching the portion of the silicon substrate exposed through the patterned photoresist layer in the presence of the plasma..
Applied Materials, Inc.
01/29/15
20150031172
new patent

Method for interconnection of components on a substrate


A method is described for interconnecting first, 27, and second, 22, components on a substrate, 21. The method comprises attaching said first component, 27, to said substrate, attaching said second component, 22, to said substrate, 21, said first and second components being positioned relative to each other on said substrate to form a gap, 31, therebetween.
Hamilton Sundstrand Corporation
01/29/15
20150031167
new patent

Deposition apparatus, forming thin film using the deposition apparatus, and manufacturing organic light emitting display apparatus using the deposition apparatus


A deposition apparatus for performing a deposition process on a substrate includes: an injection unit including a plasma generating member which receives a raw material gas and converts the raw material gas to a deposition source material in a radical form; and a plasma processor disposed adjacent to the injection unit and facing a side of the injection unit, wherein the plasma processor performs a plasma process in a direction facing the substrate.. .
Samsung Display Co., Ltd.
01/29/15
20150031148
new patent

Shadow mask for patterned deposition on substrates


A method for performing a physical vapor deposition (pvd) on a substrate is disclosed, comprising placing a substrate on a susceptor disposed below one or more pvd guns and below a plasma shield assembly having a bellows and a shadow mask coupled to a bottom side of the bellows, lowering the bellows toward the substrate to place the shadow mask in contact with the substrate; and depositing a material on an isolated region on the substrate through the shadow mask. In one implementation, the shadow mask may include a plate having openings in the shape of individual dies on the substrate, and a layer having openings in the shape of features patterned on the substrate, wherein the layer is coupled to a bottom surface of the plate by an epoxy..
Intermolecular, Inc.
01/29/15
20150031034
new patent

Methods and compositions for detecting genetic material


This invention provides compositions and methods for detecting differences in copy number of a target polynucleotide. In some cases, the methods and compositions provided herein are useful for diagnosis of fetal genetic abnormalities, when the starting sample is maternal tissue (e.g., blood, plasma).
Bio-rad Laboratories, Inc.
01/29/15
20150030792
new patent

Polylactic acid formed body having a vapor-deposited film and producing the same


A polylactic acid formed body including a polylactic acid base material (1) and a hydrocarbon film (3) vapor-deposited on the surface of the base material by a plasma cvd method. The polylactic acid base material (1) exhibits a sharp x-ray diffraction peak in which a half-width of peak appearing in the 10°-25° wide angle x-ray measurement is not more than 1.22°, and the hydrocarbon film (3) is vapor-deposited on the surface of the polylactic acid base material (1), and includes two layers of a high ch2 layer (3a) having a ratio of ch2 per the total of ch, ch2 and ch3 of not less than 40% and a low ch2 layer (3b) formed on the high ch2 layer (3a) and having a ratio of ch2 per the total of ch, ch2 and ch3 of not more than 35%..
Toyo Seikan Group Holdings, Ltd.
01/29/15
20150030786
new patent

Microwave plasma reactor for manufacturing synthetic diamond material


A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the gas flow system comprises a gas inlet nozzle array comprising a plurality of gas inlet nozzles disposed opposite the substrate holder for directing process gases towards the substrate holder, the gas inlet nozzle array comprising: at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber; a gas inlet nozzle number density equal to or greater than 0.1 nozzles/cm2, wherein the gas inlet nozzle number density is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber and measuring the gas inlet number density on said plane; and a nozzle area ratio of equal to or greater than 10, wherein the nozzle area ratio is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber, measuring the total area of the gas inlet nozzle area on said plane, dividing by the total number of nozzles to give an area associated with each nozzle, and dividing the area associated with each nozzle by an actual area of each nozzle.. .
Element Six Limited
01/29/15
20150030730
new patent

Method for cooking foods, and heating cooker


Pci (plasmacluster ion) ions are released for approximately five minutes to a food such as vegetables, at a temperature of around 40° c. In a no-air flowing state and with no steam present..
Sharp Kabushiki Kaisha
01/29/15
20150030693
new patent

Anti-tumor aqueous solution, anti-cancer agent, and methods for producing said aqueous solution and said anti-cancer agent


An object of the present invention is to provide an antitumor aqueous solution and an anticancer agent, both of which can kill cancer cells while having virtually no effects on normal cells, and to provide methods for producing the antitumor aqueous solution and the anticancer agent. The method of the invention for producing an antitumor aqueous solution for killing cancer cells includes an aqueous solution preparation step of preparing an aqueous solution through addition, to water, of a solute containing at least one of disodium hydrogen phosphate (na2hpo4), sodium hydrogen carbonate (nahco3), l-glutamine, l-histidine, and l-tyrosine disodium dihydrate (l-tyrosine.2na.2h2o); and a plasma irradiation step of irradiating the aqueous solution with atmospheric pressure plasma generated in a plasma generation region by means of a plasma generator..
Nu Eco Engineeering Co., Ltd.
01/29/15
20150030665
new patent

Composition and treating connective tissue damage


The present invention provides a composition, and a method of use thereof, for treating connective tissue damage in man and in animals, which comprises a therapeutically effective amount of chondroitin sulfate, n-acetyl d-glucosamine, and hyaluronan (hyaluronic acid). Particularly, the present invention provides a composition, and a method of use thereof, for treating connective tissue damage including, but not limited to, arthritic disease, osteoarthritis, rheumatoid arthritis, osterochondrosis dessicans, cartilage damage, joint injury, joint inflammation, joint synovitis, degenerative joint disease (djd), post surgical djd, traumatic injury, fracture, tendon damage, ligament damage, skeletal damage, musculoskeletal damage, fiber damage, adipose tissue damage, small intestine tissue damage, blood cell damage, and plasma damage.
Arthrodynamic Technologies, Animal Health Division, Inc.
01/29/15
20150030664
new patent

Blood coagulation inducing polymer hydrogel


The present application is drawn to a synthetic, polymer hydrogel-based material, which is able to actively induce the body's natural hemostatic coagulation process in blood or acellular plasma. The present invention provides the development of a primary amine containing polymer hydrogel capable of inducing blood coagulation and delivering therapeutics for hemostatic or wound care applications, and a method of forming such a primary amine containing polymer hydrogel capable of inducing the blood coagulation process.
University Of Maryland At College Park
01/29/15
20150030660
new patent

Bone regeneration using biodegradable polymeric nanocomposite materials and applications of the same


A structure of, and a method of producing, a biocompatible structure for bone and tissue regeneration are disclosed. The method includes dissolving a polyurethane polymer in methanol, adding hydroxyapatite (hap) nanoparticles to form a uniformly distributed mixture, applying the mixture to a polytetrafluoroethylene (ptfe) surface to form a polymer film, cutting the polymer film into strips, stacking the strips with layers of bone particles disposed therebetween, coating the stacked strips and layers by the mixture and allowing it to dry, adding bone particles to the coating, and plasma treating the structure to form the biocompatible structure.
Board Of Trustees Of The University Of Arkansas
01/29/15
20150030578
new patent

Method for producing activated autologous platelet rich and platelet poor plasma and methods of use


A method and kit to produce activated autologous platelet rich and platelet poor plasma (aaprpp) and methods of use to treat pain. The method to produce aaprpp generally comprising (1) obtaining whole blood from patient; (2) centrifuging whole blood in a collection tube; (3) extracting platelet rich and platelet poor plasma mixture from collection tube; and (4) transferring platelet rich and platelet poor plasma mixture to an activation tube containing at least one platelet aggregator and at least one platelet activator to obtain a resulting platelet concentration.
01/29/15
20150030500
new patent

Irradiation inactivating pathogens and/or leukocytes in a biological fluid and process


The invention relates to an irradiation apparatus for inactivating pathogens and/or leukocytes in a biological fluid such as a platelet suspension and/or plasma comprising: a casing (2), a support member (3) for carrying at least one irradiation bag (19) containing the biological fluid, a light source (4) comprising two banks of light (5, 6) disposed above and below the support member (3), and an agitating system (25) for moving the support member (3), the light source generating uvc light of suitable intensity to inactivate pathogens and/or leukocytes and the agitation system moving the support member in an orbital path with predetermined amplitude and rotational frequency suitable to expose the whole biological fluid to uvc.. .
Maco Pharma S.a.
01/29/15
20150030435
new patent

Plasma flow control inlet particle separator system


An inlet particle separator system for an engine includes a hub section, a shroud section, a splitter, and a plasma flow control actuator. The shroud section surrounds at least a portion of the hub section and is spaced apart therefrom to define a passageway having an air inlet.
Honeywell International Inc.
01/29/15
20150029681
new patent

Flexible composite, production thereof and use thereof


A flexible composite comprising a plastic foil, having an upper and a lower surface, and at least one dielectric barrier layer against gases and liquids which is applied directly to at least one of the surfaces by plasma-enhanced thermal vapor deposition and comprises an inorganic vapor-depositable material, is provided. The flexible composite can be used for constructing flexible circuits or displays and has a high barrier effect with regard to oxygen and/or water vapor..
Evonik Industries Ag
01/29/15
20150029632
new patent

Auto-triggered methods and systems for protecting against direct and indirect electronic attack


Methods and systems for preventing direct and indirect electronic attacks, cyber attacks, and/or minimizing the impact of high voltage pulses are disclosed. In an aspect, an example system can comprise an electromagnetic plasma disrupter device.
The Board Of Regents Of The University Of Nevada System Of Higher Education On Behalf Of The Univer
01/29/15
20150028972
new patent

Methods and systems for plasma deposition and treatment


This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit.
01/29/15
20150028962
new patent

Radio frequency signal splitter and matcher


This application relates to systems and methods for splitting a current signal into at least two signals that are out of phase with each other. The power splitter may include a conductive element that may generate standing magnetic field that alternates at specified frequency.
Tokyo Electron Limited
01/29/15
20150028744
new patent

Etch rate modeling and use thereof for in-chamber and chamber-to-chamber matching


A method for performing chamber-to-chamber matching includes receiving a voltage and a current measured at an output of an rf generator of a first plasma system. The method further includes calculating a sum of terms.
Lam Research Corporation
01/29/15
20150028491
new patent

Improved sicoh hardmask with graded transition layers


A structure and method for fabricating an improved sicoh hardmask with graded transition layers having an improved profile for forming sub-20 nm back end of the line (beol) metallized interconnects are provided. In one embodiment, the improved hardmask may be comprised of five layers: an oxide adhesion layer, a graded transition layer, a dielectric layer, an inverse graded transition layer, and an oxide layer.
International Business Machine Corporation
01/29/15
20150028446
new patent

Wafer dicing with wide kerf by laser scribing and plasma etching hybrid approach


Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, approaches for wafer dicing with wide kerf by using a laser scribing and plasma etching hybrid approach are described.
01/29/15
20150028431
new patent

Mol insitu pt rework sequence


The amount of pt residues remaining after forming pt-containing nisi is reduced by performing an o2 flash while shaping gate spacers, and then cleaning and applying a second application of aqua regia. Embodiments include sputter depositing a layer of ni/pt on a semiconductor substrate, annealing the ni/pt layer, wet stripping unreacted ni, annealing the ni stripped ni/pt layer, stripping unreacted pt from the annealed ni/pt layer, e.g., with aqua regia, treating the pt stripped ni/pt layer with an oxygen plasma, cleaning the ni/pt layer, and stripping unreacted pt from the cleaned ni/pt layer, e.g., with a second application of aqua regia..
Globalfoundries Inc.
01/29/15
20150028331
new patent

Thin-film transistor, manufacturing the same, and manufacturing backplane for flat panel display


Provided are a thin-film transistor (tft), a method of manufacturing the same, and a method of manufacturing a backplane for a flat panel display (fpd). The method of manufacturing the tft according to an embodiment of the present invention includes forming a gate electrode on a substrate; forming an insulating layer on the substrate to cover the gate electrode; performing a plasma treatment on an upper surface of the insulating layer using a halogen gas; forming an oxide semiconductor layer on the insulating layer and positioned to correspond to the gate electrode; and forming source and drain electrodes on the insulating layer to contact and over portions of the oxide semiconductor layer..
University-industry Cooperation Group Of Kyung Hee University
01/29/15
20150028295
new patent

Organic light emitting display apparatus using facing target sputtering apparatus and manufacturing the organic light emitting display apparatus


A method of manufacturing an organic light-emitting display apparatus includes preparing a deposition target in which an organic light-emitting portion is formed on a substrate, forming a pre-encapsulation layer for encapsulating the organic light-emitting portion by using a facing target sputtering apparatus, and forming an encapsulation layer by performing a plasma surface process on the pre-encapsulation layer by using the facing target sputtering apparatus. The facing target sputtering apparatus includes a chamber in which a mounting portion for accommodating the deposition target is provided, a gas supply portion facing the mounting portion and supplying gas to the chamber, a first target portion and a second target portion disposed in the chamber and facing each other, and an induced magnetic field coil surrounding the exterior of the chamber..
Samsung Display Co., Ltd.
01/29/15
20150028258
new patent

Two-stage plasma process for converting waste into fuel gas and apparatus therefor


A two-step gasification process and apparatus for the conversion of solid or liquid organic waste into clean fuel, suitable for use in a gas engine or a gas burner, is described. The waste is fed initially into a primary gasifier, which is a graphite arc furnace.
Pyrogenesis Canada Inc.
01/29/15
20150028223
new patent

Arrangement and transporting radicals


The invention relates to an arrangement for transporting radicals. The arrangement includes a plasma generator and a guiding body.
Mapper Lithography Ip B.v.
01/29/15
20150028222
new patent

Plasma-based photon source, ion source, and related systems and methods


A photon source includes a plasma source for generating plasma and a photon guide through which the plasma travels. The photon guide includes an inner surface configured for reflecting photons emitted from the plasma.
Agilent Technologies, Inc.
01/29/15
20150028024
new patent

Multi-stage compressor in a plasma cutter


Systems and methods are provided for a torch power system using a multi-stage compressor. In one embodiment, a system includes a torch power unit that includes a compressor having multiple compression stages.
Illinois Tool Works Inc.
01/29/15
20150028003
new patent

Apparatus and a liquid cooled shield for improved piercing performance


A shield for a plasma arc torch is configured to protect consumable components of the plasma arc torch from splattering molten metal. The shield includes a generally conical unitary body defining (i) an interior surface to form a gas flow path with an outer surface of an adjacent nozzle of the plasma arc torch, and (ii) an exterior surface.
Hypertherm, Inc.
01/29/15
20150028002
new patent

Devices for gas cooling plasma arc torches and related systems and methods


In some aspects, methods for providing a uniform shield gas flow for an air-cooled plasma arc torch can include supplying a shield gas to a shield gas flow channel defined by an exterior surface of a nozzle and an interior surface of a shield; flowing the shield gas along the shield gas flow channel; reversing the flow of the shield gas along the shield gas flow channel using a recombination region, the recombination region comprising at least one flow reversing member; and flowing the shield gas from the mixing region to an exit orifice of the shield, thereby producing a substantially uniform shield gas flow at the exit orifice.. .
Hypertherm, Inc.
01/29/15
20150028001
new patent

Devices for gas cooling plasma arc torches and related systems and methods


In some aspects, nozzles for gas-cooled plasma torches can include a body having a first end and a second end that define a longitudinal axis; a plenum region substantially formed within the body that extends from the first end and is configured to receive a plasma gas flow; an exit orifice located at the second end oriented substantially coaxially with the longitudinal axis, the exit orifice fluidly connected to the plenum region; and a feature on an outer surface of the body to increase cooling by receiving a high velocity cooling gas flow flowing in a direction along a length of the body, an impingement surface of the feature to receive the cooling gas flow at a substantially perpendicular direction relative to the impingement surface and to redirect the cooling gas flow to promote cooling and uniform shield flow.. .
Hypertherm, Inc.
01/29/15
20150028000
new patent

Devices for gas cooling plasma arc torches and related systems and methods


In some aspects, nozzles for a gas-cooled plasma torches can include a hollow generally cylindrical body having a first end and a second end that define a longitudinal axis, the second end of the body defining a nozzle exit orifice; a gas channel formed in the first end between an interior wall and an exterior wall of the cylindrical body, the gas channel directing a gas flow circumferentially about at least a portion of the body; an inlet passage formed substantially through a radial surface of the exterior wall and fluidly connected to the gas channel; and an outlet passage at least substantially aligned with the longitudinal axis and fluidly connected to the gas channel.. .
Hypertherm, Inc.
01/29/15
20150027998
new patent

Plasma arc cutting system and persona selection process


The invention features methods and apparatuses for establishing operational settings of a plasma arc cutting system. A plasma power supply includes a user selectable control.
Hypertherm, Inc.
01/29/15
20150027637
new patent

Plasma processing apparatus


Provided is a plasma processing apparatus in which a variable inductor is installed in series with a variable condenser in a second power feeding unit that distributes and supplies high-frequency power to an inner upper electrode 56. As a result, a characteristic around a resonance point may be broad in a capacitance-outer/inner power distribution ratio of the variable condenser (varicon).
Tokyo Electron Limited
01/29/15
20150027635
new patent

Plasma processing apparatus


A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma includes a dc power supply configured to apply a dc voltage to the upper electrode; a ground electrode connected to the dc power supply; and an annular shield member provided outside the ground electrode. A groove is formed into a downward recess at an outer peripheral portion of the ground electrode, and an upper end of the shield member is positioned above an upper end of the peripheral portion of the ground electrode.
Tokyo Electron Limited
01/29/15
20150027531
new patent

Silicon-containing film and forming silicon-containing film


A silicon-containing film includes a first chemical vapor deposition layer and a second chemical vapor deposition layer. The first chemical vapor deposition layer includes elemental silicon.
Toray Engineering Co., Ltd.
01/29/15
20150027497
new patent

Method of cleaning a torch of a plasma-coating plant and a plasma-coating plant


The invention provides for a system and method of cleaning a plasma coating torch, wherein the method comprises subjecting a plasma coating torch to a cleaning agent in order to removed spray material particles which have adhered during coating with the plasma coating torch and during said subjecting, the cleaning agent exits a nozzle and, upon exiting the nozzle, directly changes to a gaseous state from either a solid state or a liquid state.. .
Sulzer Metco Ag
01/29/15
20150027404
new patent

Multi-fuel plasma injector


The inventive subject matter provides apparatus, systems and methods for treating and delivering a fuel to a combustion chamber of an engine in order to improve efficiency of the engine. In one aspect of the invention, a fuel injector that cooperates with an internal combustion engine to combust a first fuel to produce power is presented.
Thrival Tech, Llc
01/29/15
20150027395
new patent

Control device for spark ignition type internal combustion engine


To alleviate or eliminate a problem of unburned fuel discharged to the outside of a cylinder in a case in which an air fuel mixture is insufficiently combusted in a combustion chamber. During the expansion stroke in which a high voltage is applied to an ignition plug via an ignition coil, and a spark discharge is caused to occur at the ignition plug, thereby the air fuel mixture in the combustion chamber is ignited and combusted, in a case in which deterioration of combustion state is detected, a microwave electric field is created in the combustion chamber prior to an opening timing of an exhaust valve at an end stage of the expansion stroke, thereby plasma is generated and enlarged in the combustion chamber..
Imagineering, Inc.
01/29/15
20150027373
new patent

Apparatus for treating a gas stream


An apparatus for treating a gas stream. A plasma generator generates a plasma flare.
Edwards Limited
01/29/15
20150027369
new patent

Apparatus for treating a gas stream


In an apparatus for treating a gas stream, a plasma generator comprises an electrode for energising a source gas to generate a plasma flare by application of a high voltage. An inlet allows the gas stream into the apparatus and directs it into the generated plasma.
Edwards Limited
01/29/15
20150027362
new patent

Seed layers and process of manufacturing seed layers


This invention relates seed layers and a process of manufacturing seed layers for casting silicon suitable for use in solar cells or solar modules. The process includes the step of positioning tiles with aligned edges to form seams on a suitable surface, and the step of joining the tiles at the seams to form a seed layer.
Amg Idealcast Solar Corporation
01/22/15
20150026834

Anastasis biosensor


The present invention relates to the field of anastasis, i.e., the process of reversal of apoptosis. More specifically, the present invention provides methods and compositions useful for studying anastasis.
The Johns Kopkins University
01/22/15
20150025524

Renal denervation monitoring and feedback apparatus, system and method


Methods, systems, and apparatuses for measuring the efficacy of a renal denervation procedure are described. In one embodiment, a method for measuring the efficacy of a renal denervation procedure includes utilizing an ablation catheter including one or more sensors designed and configured for measuring and reporting the plasma norepinephrine level of a subject.
St. Jude Medical, Cardiology Division, Inc.
01/22/15
20150025341

Method and device for measuring blood information


First measurement light 30 is caused to be incident on a boundary surface between blood 10 flowing through a flow cell 40 formed of a transparent material having a different refractive index from plasma (layer) 12 in the blood 10 and the flow cell 40, from an oblique direction at an angle smaller than 90 degrees. Reflected light 32 regularly reflected at the boundary surface between the flow cell 40 and the blood 10 is subjected to spectrometry.
01/22/15
20150025223

System and producing interleukin receptor antagonist (ira)


The present invention relates to a system and method for producing high levels of autologous il-1ra cytokine, comprising: a blood collection vessel (1), a cover (4), a portion of separation gel (2), an anticoagulant portion (3), a plasma collection syringe comprising a sharp needle (9), a buffy coat collection syringe (11) and an incubation tube with cover (15). The vessel is adapted such that, when containing the whole blood (5), and centrifuged after treatment, yields separation fractions comprising, a first fraction of rbcs sediment (6), a second fraction of said gel (2), a third fraction comprising wbcs, platelets and), and fourth fraction of plasma solution (8)..
Estar Technologies Ltd
01/22/15
20150024609

Semiconductor reaction chamber with plasma capabilities


A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse..
Asm Ip Holding B.v.
01/22/15
20150024604

Method of etching a silicon substrate


A method of etching a silicon substrate, in which a depressed portion is formed by etching a first surface of the silicon substrate with ions generated in plasma, the method including introducing a rare gas into a reaction system to ionize the rare gas.. .
Canon Kabushiki Kaisha
01/22/15
20150024603

Plasma etching method and plasma etching apparatus


In a plasma etching method for etching a metal layer of a substrate to be processed through a hard mask by using a plasma etching apparatus, a first step in which a first etching gas comprising a mixed gas of o2, cf4 and hbr is used as an etching gas, and a second step in which a second etching gas comprising a mixed gas of o2 and cf4 is used as an etching gas, are continuously and alternately repeated a plurality of times. At this time, a first high-frequency power of a first frequency and a second high-frequency power of a second frequency, which is lower than the first frequency, are applied to a lower electrode, and the first high-frequency power is applied in a pulse form..
Tokyo Electron Limited
01/22/15
20150024599

Plasma processing apparatus and plasma processing method


In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a component of si.. .
Hitachi High-technologies Corporation
01/22/15
20150024593

Semiconductor device comprising capacitive element


A semiconductor device production method includes forming a transition metal film, irradiating a surface of the transition metal film with a mono-silane gas to form a silicon-containing transition metal film, and oxidizing the silicon-containing transition metal film by an oxygen plasma treatment, thereby forming a transition metal silicate film.. .
Renesas Electronics Corporation
01/22/15
20150024582

Method of making a gas distribution member for a plasma processing chamber


A method of making a si containing gas distribution member for a semiconductor plasma processing chamber comprises forming a carbon member into an internal cavity structure of the si containing gas distribution member. The method includes depositing si containing material on the formed carbon member such that the si containing material forms a shell around the formed carbon member.
Lam Research Corporation
01/22/15
20150024521

Plasma processing apparatus and plasma processing method


There is provided a plasma processing apparatus which compares a plurality of patterns detected using an interference light intensity pattern using a wavelength from at least one preset film of the plurality of film layers as a parameter and an intensity pattern using a wavelength of light from the other film as a parameter and an light intensity pattern from inside the processing chamber which is detected during processing of the film to be processed; and compares a film thickness corresponding to one of the plurality of patterns having a minimum difference obtained by the comparison and a target film thickness; and determines that the thickness of the film to be processed reaches the target film thickness.. .
Hitachi High-technologies Corporation
01/22/15
20150024517

Plasma etcher chuck band


A plasma etch tool includes a wafer chuck with a chuck base and at least one functional component layer attached to the chuck base. A perimeter of the functional component layer has a polymer material permanently attached to it that extends to within 2 millimeters of a top surface of the chuck.
Texas Instruments Incorporated
01/22/15
20150024515

Systems, methods, and minimizing cross coupled wafer surface potentials


This disclosure describes systems, methods, and apparatus for reducing a dc bias on a substrate surface in a plasma processing chamber due to cross coupling of rf power to an electrode coupled to the substrate. This is brought about via tuning of a resonant circuit coupled between the substrate and ground based on indirect measurements of harmonics of the rf field level at a surface of the substrate.
Advanced Energy Industries, Inc.
01/22/15
20150024494

Defined cell culturing surfaces and methods of use


A cell culture surface having a film attached thereto, wherein the film includes one or more plasma polymerized monomers; and a coating on the film-coated surface, the coating deposited from a coating solution comprising one or more extracellular matrix proteins and an aqueous solvent, where the total extracellular matrix protein concentration in the coating solution is about 1 ng/ml to about 1 mg/ml.. .
01/22/15
20150024407

T1r hetero-oligomeric taste receptors


Newly identified mammalian taste-cell-specific g protein-coupled receptors which function as hetero-oligomeric complexes in the sweet taste transduction pathway, and the genes and cdna encoding said receptors are described. Specifically, t1r g protein-coupled receptors active in sweet taste signaling as hetero-oligomeric complexes, and the genes and cdna encoding the same, are described, along with methods for isolating such genes and for isolating and expressing such receptors.
Senomyx, Inc.
01/22/15
20150024381

Detecting and quantifying cryptic hiv replication


The present invention relates to a novel method for detecting efficient cryptic hiv replication in a patient who receives a suppressive antiviral therapy followed by administration of the hiv integrase inhibitor in an effective amount for intensifying the suppressive antiviral therapy, and has undetectable plasma viremia prior to the administration of the hiv integrase inhibitor. The method comprises making a pre-intensification measurement and one or more post-intensification measurements of the concentration of an episomal artifact in samples from the patient, and computing a pre-intensification hiv infection success ratio (r).
University Of Delaware
01/22/15
20150024300

Hydrophobized gas diffusion layers and making the same


A gas diffusion layer having a first major surface and a second major surface which is positioned opposite to said first major surface and an interior between said first and second major surfaces is formed. The gas diffusion layer comprises a porous carbon substrate which is directly fluorinated in the interior and is substantially free of fluorination on at least one of the first major surfaces or the second major surfaces, and preferably both surfaces.
University Of Kansas
01/22/15
20150024247

Printed silver oxide batteries


An energy storage device, such as a silver oxide battery, can include a silver-containing cathode and an electrolyte having an ionic liquid. An anion of the ionic liquid is selected from the group consisting of: methanesulfonate, methylsulfate, acetate, and fluoroacetate.
Nthdegree Technologies Worldwide Inc.
01/22/15
20150024225

Screen printing film and surface modification the same


A screen printing film and a surface modification method of the same are provided. The method includes providing a substrate having a pva film on at least one surface of the substrate.
Industrial Technology Research Institute
01/22/15
20150024155

Ion assisted deposition for rare-earth oxide based thin film coatings on process rings


A method of manufacturing an article comprises providing a ring for an etch reactor. Ion assisted deposition (iad) is then performed to deposit a protective layer on at least one surface of the ring, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of less than 6 micro-inches..
Applied Materials, Inc.
01/22/15
20150024148

Remote fluorination of fibrous filter webs


A method of making a fluorinated fibrous web, which method includes providing a nonwoven web 22 that contains polymeric fibers, creating a plasma that contains fluorine atoms at a first location 14, and contacting the nonwoven web with products from the plasma at a second location 26 remote from the first location 14. The method avoids exposure of the web to the plasma and hence expands the manufacturing processing window.
3m Innovative Properties Company
01/22/15
20150024147

Plasma-enhanced chemical vapor deposition apparatus and manufacturing display apparatus using the same


A plasma-enhanced chemical vapor deposition (“pecvd”) apparatus includes: an ejecting unit which is configured to eject a gas toward a substrate onto which the gas is deposited; a lift which is configured to support and selectively raise or lower a mask unit in which is defined a pattern through which the gas ejected from the ejecting unit passes towards the substrate; and a susceptor into which a portion of the lift is inserted, and which is configured to linearly move the substrate. A temperature of the lift is variable..
Samsung Display Co., Ltd.
01/22/15
20150024143

Film deposition apparatus, film deposition method, and computer readable storage medium


In a disclosed film deposition method, after a film deposition—alteration step is carried out that includes a film deposition process where a si containing gas is adsorbed on a wafer w and the adsorbed si containing gas on the wafer is oxidized by supplying an o3 gas to the upper surface of the wafer, thereby producing a silicon oxide layer(s) by rotating a turntable on which the wafer is placed, and an alteration process where the silicon oxide layer(s) is altered by plasma, an alteration step where the silicon oxide layer(s) is altered by plasma while the si containing gas is not supplied.. .
Tokyo Electron Limited
01/22/15
20150024142

Magnetic recording medium and producing protective film thereof


A method for producing a protective film for a magnetic recording medium comprises steps of (a) providing a magnetic layer formed on a substrate; and (b) forming a protective film on the magnetic layer by means of a plasma cvd method using mixed gas of specific lower saturated hydrocarbon gas and specific lower unsaturated hydrocarbon gas as source gas. Step (b) includes (b-1) of forming a first protective film on the magnetic layer and (b-2) of forming a second protective film on the first protective film.
Fuji Electric (malaysia) Sdn, Bhd.


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