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Plasma

Plasma-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Shock injector for low-laser energy electron injection in a laser plasma accelerator
The Regents Of The University Of California
June 14, 2018 - N°20180168024

This disclosure provides systems, methods, and apparatus related to laser plasma accelerators. In one aspect a block of material defines a gas inlet, a chamber in fluid communication with the gas inlet, a throat in fluid communication with the chamber, a channel in fluid communication with the throat, and a gas outlet in fluid communication with the channel.
Plasma torch
Glass Expansion Pty. Limited
June 14, 2018 - N°20180168023

Disclosed is a demountable tube for a plasma torch assembly, such as an icp torch assembly. The tube includes an open tubular body for radially surrounding a plasma within the tubular body.
Plasma-generating device, plasma surgical device and use of a plasma surgical device
Plasma Surgical Investments Limited
June 14, 2018 - N°20180168022

The present invention relates to a plasma-generating device, comprising an anode, a cathode and at least one intermediate electrode, said intermediate electrode being arranged at least partly between said anode and said cathode, and said intermediate electrode and said anode forming at least a part of a plasma channel which has an opening in said anode. Further, the plasma-generating device ...
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Semiconductor device having a passivation layer and method of making the same
Taiwan Semiconductor Manufacturing Company, Ltd.
June 14, 2018 - N°20180166406

A method of making a semiconductor device includes depositing a dielectric layer over a conductive pad using a first deposition process. The method further includes depositing a first passivation layer directly over the dielectric layer using a high density plasma chemical vapor deposition (hdpcvd).
Innovative approach to minimize plasma doping induced fin height loss
Taiwan Semiconductor Manufacturing Co., Ltd.
June 14, 2018 - N°20180166341

A plasma doping process provides conformal doping profiles for lightly doped source/drain regions in fins, and reduces the plasma doping induced fin height loss. The plasma doping process overcomes the limitations caused by traditional plasma doping processes in fin structures that feature aggressive aspect ratios and tights pitches.
Electrostatically clamped edge ring
Lam Research Corporation
June 14, 2018 - N°20180166312

An edge ring for use in a plasma processing chamber with a chuck is provided. An edge ring body has a first surface to be placed over and facing the chuck, wherein the first surface forms a ring around an aperture.
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Method of selectively etching first region made of silicon nitride against second region made of ...
Tokyo Electron Limited
June 14, 2018 - N°20180166303

Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing ...
Semiconductor manufacturing system
Taiwan Semiconductor Manufacturing Co., Ltd.
June 14, 2018 - N°20180166301

A system includes a protection device and a blocking device. The protection device is installed on a wall of a chamber.
Atomic layer etch process using plasma in conjunction with a rapid thermal activation process
Mattson Technology, Inc.
June 14, 2018 - N°20180166296

A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films.
Method of manufacturing a semiconductor device
Sii Semiconductor Corporation
June 14, 2018 - N°20180166290

Provided is a method of manufacturing a semiconductor device with which a trench shape having vertical, flat, and smooth side wall surfaces can be formed even at room temperature. A semiconductor substrate is placed on a sample stage which is kept at room temperature in a reaction container.
Super hydrophobic surface fabrication method
Industry-academic Cooperation Foundation Of Ajou University
June 14, 2018 - N°20180166289

The present invention relates to a method for producing a super-hydrophobic surface, and to a stack having a super-hydrophobic surface prepared by the above method. The super-hydrophobic surface may be realized only by plasma etching and deposition.
Method for forming semiconductor device structure with etch stop layer
Taiwan Semiconductor Manufacturing Co., Ltd.
June 14, 2018 - N°20180166285

A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (pvd) chamber.
Wafer processing method
Disco Corporation
June 14, 2018 - N°20180166282

Disclosed herein is a wafer processing method including a protective film forming step of forming a protective film with which the whole of a surface of a wafer is coated, a laser beam irradiation step of irradiating the wafer with a laser beam along streets to remove a functional layer and expose a substrate, a protective film detecting step of ...
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  • Exact USPTO filing data with full-text, images, drawings & claims.
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Virtual sensor for chamber cleaning endpoint
Applied Materials, Inc.
June 14, 2018 - N°20180166260

Implementations of the present disclosure generally relate to methods for cleaning processing chambers. More specifically, implementations described herein relate to methods for determining processing chamber cleaning endpoints.
Mounting table and plasma processing apparatus
Tokyo Electron Limited
June 14, 2018 - N°20180166259

Non-uniformity of temperature of a focus ring can be improved by reducing holes which hamper a heat transfer from the focus ring to a base. A mounting table includes the base configured to place a processing target object thereon; the focus ring provided on the base to surround a region on which the processing target object is placed; a connecting ...
Method for supplying gas, and plasma processing apparatus
Tokyo Electron Limited
June 14, 2018 - N°20180166257

In the exemplary embodiment, a method for supplying a gas is provided. This method includes: supplying a processing gas to each of a central gas inlet portion and a peripheral gas inlet portion through a first branch line and a second branch line; closing a valve at a downstream side in a gas line for an additional gas, and filling ...
Multi-radiofrequency impedance control for plasma uniformity tuning
Lam Research Corporation
June 14, 2018 - N°20180166256

Circuits, methods, chambers, systems, and computer programs are presented for processing wafers. A wafer processing apparatus includes top and bottom electrodes inside a processing chamber; a first, second, third, and fourth radio frequency (rf) power sources; and one or more resonant circuits.
Thermal atomic layer etching processes
Asm Ip Holding B.v.
June 14, 2018 - N°20180166255

Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant.
Method for diagnosis of primary hyperaldosteronism
Attoquant Diagnostics Gmbh
June 14, 2018 - N°20180164330

Methods and kits for the diagnosis of primary hyperaldosteronism (pha). In particular, the present invention relates to the use of a new diagnostic parameter that is composed of the ratio between the ang ii level, in particular the steady state equilibrium ang ii level, and the aldosterone level in a biological sample, such as e.g.
Emission-based detector for capillary gas chromatography
Mecanique Analytique Inc.
June 14, 2018 - N°20180164219

An emission-based detector for use in conjunction with capillary chromatography or other applications involving a gas sample having a small volume is provided. The detector is based on optical emission from a plasma medium.
Anode electrode shield for inverted magnetron cold cathode ionization gauge
Mks Instruments, Inc.
June 14, 2018 - N°20180164176

A cold cathode ionization gauge (ccig) includes an extended anode, a cathode surrounding the anode along a length of the anode, and a feedthrough insulator supporting the anode. The cathode forms a discharge space around the anode to enable formation of a plasma between the anode and the cathode and a resultant ion current flow into the cathode.
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