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Plasma patents



      
           
This page is updated frequently with new Plasma-related patent applications. Subscribe to the Plasma RSS feed to automatically get the update: related Plasma RSS feeds. RSS updates for this page: Plasma RSS RSS


Method of adsorbing target object on mounting table and plasma processing apparatus

Tokyo Electron Limited

Method of adsorbing target object on mounting table and plasma processing apparatus

Etching method and etching apparatus

Tokyo Electron Limited

Etching method and etching apparatus

Etching method and etching apparatus

Intermolecular

Methods to control sio2 etching during fluorine doping of si/sio2 interface

Date/App# patent app List of recent Plasma-related patents
05/21/15
20150141986
 Nano discharges in liquids patent thumbnailnew patent Nano discharges in liquids
The present invention is direct to a nano-probe corona tool and uses thereof a nano-probe corona tool is disclosed having a tip with a diameter in the nano-scale, typically around 100 nm. The nano-probe corona tool is constructed of electrically conductive material.
Drexel University
05/21/15
20150141968
 Method and  patterned plasma-mediated laser trephination of the lens capsule and three dimensional phaco-segmentation patent thumbnailnew patent Method and patterned plasma-mediated laser trephination of the lens capsule and three dimensional phaco-segmentation
System and method for making incisions in eye tissue at different depths. The system and method focuses light, possibly in a pattern, at various focal points which are at various depths within the eye tissue.
Optimedica Corporation
05/21/15
20150141660
 Substrates and inhibitors of antiplasmin cleaving enzyme and fibroblast activation protein and methods of use patent thumbnailnew patent Substrates and inhibitors of antiplasmin cleaving enzyme and fibroblast activation protein and methods of use
The presently disclosed and claimed inventive concepts include inhibitors of antiplasmin cleaving enzyme (apce) and fibroblast activation protein alpha (fap) which can be used in various therapies related to disorders of fibrin and α2-antiplasmin and abnormal cell proliferation. The presently disclosed and claimed inventive concepts also include substrates of apce and fap, which may be used, for example, in screening methods for identifying such inhibitors.
The Board Of Regents Of The University Of Oklahoma
05/21/15
20150141528
 Neural specific s100b for biomarker assays and devices for detection of a neurological condition patent thumbnailnew patent Neural specific s100b for biomarker assays and devices for detection of a neurological condition
An in vitro diagnostic (ivd) device is used to detect the presence of and/or severity of neural injuries or neuronal disorders in a subject. The ivd device relies on an immunoassay which identifies biomarkers that are diagnostic of neural injury and/or neuronal disorders in a biological sample, such as whole blood, plasma, serum, and/or cerebrospinal fluid (csf).
Banyan Biomarkers, Inc.
05/21/15
20150141510
 Cardiovascular disease primary prevention agent for patients having high blood levels of high-sensitivity c-reactive protein patent thumbnailnew patent Cardiovascular disease primary prevention agent for patients having high blood levels of high-sensitivity c-reactive protein
The present invention provides the following: a cardiovascular disease primary prevention agent, which comprises as the active ingredient at least one selected from the group consisting of epa, salts thereof, and esters thereof and is for lowering the risk of cardiovascular disease by administration to subjects having a blood (serum or plasma) hs-crp level of 1.0 mg/l or higher in spite of no history of cardiovascular disease; a combination marker comprising the blood hs-crp value and serum epa/aa ratio for evaluating the primary risk of cardiovascular disease in subjects having no history of cardiovascular disease; and a method for extracting subjects with high risk of cardiovascular disease and/or a method for preventing cardiovascular disease.. .
Mochida Pharmaceutical Co., Ltd.
05/21/15
20150141342
 Blood borne mirna signature for the accurate diagnosis of pancreatic ductal adenocarcinoma patent thumbnailnew patent Blood borne mirna signature for the accurate diagnosis of pancreatic ductal adenocarcinoma
The differential expression of select mirna in plasma and bile among patients with pdac, chronic pancreatitis (cp), and controls were measured. Patients (n=215) with treatment-naïve pdac (n=77), cp with bile or pancreatic duct pathology (n=67), and controls (n=71) that had been prospectively enrolled in a pancreatobiliary disease biorepository at the time of endoscopic retrograde cholangiopancreatography (ercp) or endoscopic ultrasound (eus) were identified.
Indiana University Research And Technology Corp.
05/21/15
20150140839
 Substrate processing apparatus patent thumbnailnew patent Substrate processing apparatus
Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species.. .
Hitachi Kokusai Electric, Inc.
05/21/15
20150140836
 Methods to control sio2 etching during fluorine doping of si/sio2 interface patent thumbnailnew patent Methods to control sio2 etching during fluorine doping of si/sio2 interface
Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead.
Intermolecular, Inc.
05/21/15
20150140834
 Al2o3 surface nucleation preparation with remote oxygen plasma patent thumbnailnew patent Al2o3 surface nucleation preparation with remote oxygen plasma
Methods and apparatus for processing using a plasma source for the treatment of semiconductor surfaces are disclosed. The apparatus includes an outer vacuum chamber enclosing a substrate support, a plasma source (either a direct plasma or a remote plasma), and an optional showerhead.
Intermolecular Inc.
05/21/15
20150140833
 Method of depositing a low-temperature, no-damage hdp sic-like film with high wet etch resistance patent thumbnailnew patent Method of depositing a low-temperature, no-damage hdp sic-like film with high wet etch resistance
Embodiments of the invention generally relate to methods of forming an etch resistant silicon-carbon-nitrogen layer. The methods generally include activating a silicon-containing precursor and a nitrogen-containing precursor in the processing region of a processing chamber in the presence of a plasma and depositing a thin flowable silicon-carbon-nitrogen material on a substrate using the activated silicon-containing precursor and a nitrogen-containing precursor.
Applied Materials, Inc.
05/21/15
20150140828
new patent

Etching method and plasma processing apparatus


A method of etching an etching target layer containing polycrystalline silicon includes preparing a target object including the etching target layer and a mask formed on the etching target layer; and etching the etching target layer with the mask. Further, the mask includes a first mask portion formed of polycrystalline silicon and a second mask portion interposed between the first mask portion and the etching target layer and formed of silicon oxide.
Tokyo Electron Limited
05/21/15
20150140822
new patent

Multilayer film etching method and plasma processing apparatus


In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a first layer having a first dielectric constant and a second layer having a second dielectric constant. This method includes (a) a multilayer film etching step, in which an etchant gas is supplied into a processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the etchant gas; and (b) a resist mask reducing step in which an oxygen-containing gas and a fluorocarbon-based gas are supplied to the processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the oxygen-containing gas and the fluorocarbon-based gas.
Tokyo Electron Limited
05/21/15
20150140821
new patent

Etching method and etching apparatus


An etching method is provided that includes the steps of supplying an etching gas containing a fluorocarbon (cf) based gas into a processing chamber, generating a plasma from the etching gas, and etching a silicon oxide film through a polysilicon mask using the plasma. The polysilicon film has a predetermined pattern and is arranged on the silicon oxide film.
Tokyo Electron Limited
05/21/15
20150140812
new patent

Methods for dry etching cobalt metal using fluorine radicals


Embodiments of methods for etching cobalt metal using fluorine radicals are provided herein. In some embodiments, a method of etching a cobalt layer in a substrate processing chamber includes: forming a plasma from a process gas comprising a fluorine-containing gas; and exposing the cobalt layer to fluorine radicals from the plasma while maintaining the cobalt layer at a temperature of about 50 to about 500 degrees celsius to etch the cobalt layer..
Applied Materials, Inc.
05/21/15
20150140784
new patent

Wafer processing method


A wafer processing method for dividing a wafer into individual devices along a plurality of crossing division lines, including a frame preparing step of preparing a frame having a plurality of crossing partitions corresponding to the division lines of the wafer, a resin covering step of spreading a resin powder on the wafer and positioning the partitions of the frame in alignment with the division lines, thereby covering with the resin powder the regions of the wafer other than the regions corresponding to the division lines, a masking step of melting and curing the resin powder supplied to the wafer processed by the resin covering step and next removing the frame, thereby masking the regions other than the regions corresponding to the division lines, and an etching step of plasma-etching the wafer processed by the masking step to thereby divide the wafer into the individual devices along the division lines.. .
Disco Corporation
05/21/15
20150140748
new patent

Integrated circuit structure to resolve deep-well plasma charging problem and forming the same


A method for forming an integrated circuit includes forming a deep n-well (dnw) in a substrate, and forming a pmos transistor in the dnw. The method also includes forming an nmos transistor in the substrate and outside the dnw, and forming a reverse-biased diode.
Taiwan Semiconductor Manufacturing Company, Ltd.
05/21/15
20150140732
new patent

Method for manufacturing semiconductor device


It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma.
Semiconductor Energy Laboratory Co., Ltd.
05/21/15
20150140726
new patent

Method for manufacturing semiconductor device


A transparent conductive substrate (1) in which a transparent conductive film (12) is placed on a light-transmissive base plate (11) is brought into a reaction chamber of a plasma apparatus without being rinsed (step (a)) and the transparent conductive film (12) is treated with plasma using a ch4 gas and an h2 gas (step (b)). After step (b), semiconductor devices are deposited on the transparent conductive film (12) in series (steps (c) and (d)) and a semiconductor device (10) is manufactured (step (e))..
Sharp Kabushiki Kaisha
05/21/15
20150140724
new patent

Deposition of photovoltaic thin films by plasma spray deposition


In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer..
Zetta Research And Development Llc - Aqt Series
05/21/15
20150140353
new patent

Article formed by plasma spray


An article and method of forming the article are disclosed. The article includes a substrate, an overlay bond coat deposited over the substrate and a topcoat deposited over the bond coat.
General Electric Company
05/21/15
20150140234
new patent

Device and manufacturing nanostructures consisting of carbon


The invention relates to a device for manufacturing nanostructures consisting of carbon, such as monolayers, multilayer sheet structures, tubes, or fibers having a gas inlet element (2) having a housing cavity (5) enclosed by housing walls (3, 3′, 3″), into which a gas feed line (6) opens, through which a gaseous, in particular carbonaceous starting material can be fed into the housing cavity (5), having a plasma generator, which has components (8, 9, 10) arranged at least partially in the housing cavity (5), which has at least one plasma electrode (9) to which electrical voltage can be applied, to apply energy to the gaseous starting material by igniting a plasma and thus convert it into a gaseous intermediate product, and having a gas outlet surface (4) having a plurality of gas outlet openings (7), through which the gaseous intermediate product can exit out of the housing cavity (5). A gas heating unit (11) is provided for assisting the conversion, which is arranged downstream of the components (8, 9, 10)..
Aixtron Se
05/21/15
20150140233
new patent

Methods for preferential growth of cobalt within substrate features


Methods for depositing cobalt in features of a substrate include providing a substrate to a process chamber, the substrate having a first surface, a feature formed in the first surface comprising an opening defined by one or more sidewalls, a bottom surface, and upper corners, and the substrate having a first layer formed atop the first surface and the opening, wherein a thickness of the first layer is greater proximate the upper corners of the opening than at the sidewalls and bottom of the opening; exposing the substrate to a plasma formed from a silicon-containing gas to deposit a silicon layer predominantly onto a portion of the first layer atop the first surface of the substrate; and depositing a cobalt layer atop the substrate to fill the opening, wherein the silicon layer inhibits deposition of cobalt on the portion of the first layer atop the first surface of the substrate.. .
Applied Materials, Inc.
05/21/15
20150139853
new patent

Method and transforming a liquid stream into plasma and eliminating pathogens therein


A liquid stream is transformed into a vapor and liquid medium, then plasma state is generated in the medium, which generates various high-energy particles causing a number of physical and/or chemical effects, then the vapor and liquid medium is condensed back into an output stream of liquid. Liquid feedstock (e.g.
Aic, Llc
05/21/15
20150138545
new patent

Handheld libs analyzer end plate purging structure


A handheld libs analyzer includes a laser source for generating a laser beam and a spectrometer subsystem for analyzing a plasma generated when the laser beam strikes a sample. A nose section includes an end plate with an aperture for the laser beam, a purge cavity behind the aperture fluidly connected to a source of purge gas, and a shield covering the purge cavity.
Sciaps, Inc.
05/21/15
20150138519
new patent

Contamination trap for a lithographic apparatus


Disclosed is a contamination trap arrangement (300) configured to trap debris particles that are generated with the formation of a plasma within a radiation source configured to generate extreme ultraviolet radiation. The contamination trap comprises a vane structure (310) for trapping the debris particles; a heating arrangement (330) for heating the vane structure, the heating arrangement being in thermal communication with the vane structure; a cooling arrangement (350) for transporting heat generated as a result of the plasma formation, away from the vane structure, and a gap (370) between the heating arrangement and the cooling arrangement.
Asml Netherlands B.v.
05/21/15
20150138443
new patent

Control plasma tv, a bluetooth touch control pen and a plasma tv


Disclosed are a control method of plasma tv, a bluetooth touch control pen and a plasma tv, the method comprising: configuring all or part of the pixel points of a plasma tv screen to transmit a light signal carrying pixel position information; a touch control pen receiving the light signal by contacting the screen, calculating the pixel coordinate values of the position of a contact point on the screen according to the pixel position information in the light signal, and transmitting the calculated pixel coordinate values to the plasma tv via bluetooth transmission; the plasma tv conducting a corresponding operation according to the received pixel coordinate values. The present invention realizes a novel touch control solution for large screen plasma tvs, and the solution has good user experience and low cost..
Goertek. Inc.
05/21/15
20150137682
new patent

Glow discharge lamp


The disclosure includes a glow-discharge lamp including: an elongate casing transparent to illuminating radiation and containing a plasma gas; a device for applying an electric field for maintaining a plasma in the so-called positive column region of the casing, the device including two electrodes forming an anode and a cathode located in the casing at each end thereof; and a radio-frequency or microwave cathode plasma source arranged in the casing in relation to the cathode-forming electrode, such as to generate a high-frequency discharge located on the surface of the electrode in order to generate the plasma. The disclosure also includes a lighting method of such a glow-discharge lamp..
Universite Joseph Fourier-grenoble 1
05/21/15
20150137681
new patent

Plasma generation source employing dielectric conduit assemblies having removable interfaces and related assemblies and methods


plasma generation source employing dielectric conduit assemblies having removable interfaces and related assemblies and methods are disclosed. The plasma generation source (pgs) includes an enclosure body having multiple internal surfaces forming an internal chamber having input and output ports to respectively receive a precursor gas for generation of plasma and to discharge the plasma.
Applied Materials, Inc.
05/21/15
20150137677
new patent

Dielectric barrier discharge-type electrode structure for generating plasma having conductive body protrusion on electrodes


Provided is a dielectric barrier discharge-type electrode structure for generating plasma. The electrode structure, according to the present invention, comprises: an upper conductive body electrode and a lower conductive body electrode; at least one conductive body electrode protrusion portion, which is formed on at least one surface of the upper conductive body electrode and/or the lower conductive body electrode; a dielectric layer which is formed on at least one of the inner surfaces of the upper conductive body electrode and the lower conductive body electrode that face each other, so as to have a substantially uniform thickness; and a specific gap (d) which is formed between the upper and lower conductive body electrodes and the dielectric layer, or between dielectric layers, due to the protruding effect of the conductive body electrode protrusion portion when the upper conductive body electrode and the lower conductive body electrodes come into close contact, wherein the plasma is generated by applying a pulse power or an alternating power to the upper conductive body electrode and the lower conductive body electrode..
Sp Tech Co., Ltd.
05/21/15
20150137184
new patent

Semiconductor device and manufacturing a semiconductor device


A method of manufacturing a semiconductor device includes laminating and forming an electron transit layer, an electron supplying layer, an etching stop layer, and a p-type film on a substrate sequentially, the p-type film being formed of a nitride semiconductor material that includes al doped with an impurity element that attains p-type, the etching stop layer being formed of a material that includes gan, removing the p-type film in an area except an area where a gate electrode is to be formed, by dry etching to form a p-type layer in the area where the gate electrode is to be formed, the dry etching being conducted while plasma emission in the dry etching is observed, the dry etching being stopped after the dry etching is started and plasma emission originating from al is not observed, and forming the gate electrode on the p-type layer.. .
Transphorm Japan, Inc.
05/21/15
20150136999
new patent

Excimer light source


A light source, with electrodes of alternating polarity attached to a substrate in an excimer ultraviolet (uv) lamp, for generating a plasma discharge between each of the electrodes. The shape of the substrate can shape and control the plasma discharge to reduce exposure of materials susceptible to attack by the halogens.
Ultraviolet Sciences, Inc.
05/21/15
20150136735
new patent

Plasma processing device and plasma processing method


To provide a plasma processing device and a plasma processing method capable of performing high-speed processing. In an inductively-coupled plasma torch unit, a coil, a lid and a first ceramic block are bonded together, and a long chamber has an annular shape.
Panasonic Corporation
05/21/15
20150136734
new patent

Substrate treating apparatus and method


Provided is a substrate treating apparatus including a first supplying unit, a second supplying unit, a first source, a second source, a gas separation member or the like. plasma generated from a first gas supplied from a first supplying unit by the first source is used for treating a central area of a substrate.
Psk Inc.
05/21/15
20150136673
new patent

Liquid treatment unit, toilet seat with washer, washing machine, and liquid treatment apparatus


A liquid treatment unit includes: an inlet for supplying liquid; a flow passage tube connected to the inlet, the flow passage tube defining a circulation flow passage along which the liquid supplied from the inlet circulates; a plasma generator generates plasma in the liquid in at least a partial area of the flow passage tube; a distributor, provided midway in the flow passage tube, for distributing a portion of liquid from the liquid flowing through the flow passage tube; and an outlet, connected to the distributor, for ejecting the portion of liquid from the flow passage tube.. .
Panasonic Intellectual Property Management Co., Ltd.
05/21/15
20150136672
new patent

Liquid treatment unit, toilet seat with washer, washing machine, and liquid treatment apparatus


A liquid treatment unit includes: a treatment tank provided with an inlet and an outlet, the treatment tank having a shape that allows a portion of liquid to be retained; a controller that controls supply of liquid into the treatment tank and ejection of liquid from the treatment tank; and a plasma generator generates plasma in the liquid inside the treatment tank. The plasma generator generates plasma while the controller stops supply of liquid and ejection of liquid.
Panasonic Intellectual Property Management Co., Ltd.
05/21/15
20150136596
new patent

Magnetron sputtering device, magnetron sputtering method, and non-transitory computer-readable storage medium


A magnetron sputtering apparatus includes a target disposed to face a substrate mounted on a mounting part in a vacuum vessel and a magnet arrangement assembly installed at a back side of the target and having an array of magnets, the magnetron sputtering apparatus including: a gas supply part configured to supply a plasma generation gas into the vacuum vessel; a rotary mechanism configured to rotate the mounting part; a power supply part configured to apply a voltage to the target; a moving mechanism configured to move the magnet arrangement assembly between a first region and a second region; and a control unit configured to output a control signal, such that an average moving speed of the magnet arrangement assembly is different between the first region and the second region.. .
Tokyo Electron Limited
05/21/15
20150136585
new patent

Method for sputtering for processes with a pre-stabilized plasma


A method of depositing a layer of a material on a substrate is described. The method includes igniting a plasma of a sputter target for material deposition while the substrate is not exposed to the plasma, maintaining the plasma at least until exposure of the substrate to the plasma for deposition of the material on the substrate, exposing the substrate to the plasma by moving at least one of the plasma and the substrate, and depositing the material on the substrate, wherein the substrate is positioned for a static deposition process..
Applied Materials, Inc.
05/21/15
20150136583
new patent

Device for generating plasma and directing an electron beam towards a target


A device (2; 2i; 2ii; 2iv; 2v; 2vi; 2vii; 2viii) for generating plasma and for directing an electron beam towards a target (3); the device (2; 2i; 2ii; 2iv; 2v; 2vi; 2vii; 2viii) comprises a hollow element (5); an activation group (21), which is designed to impose a difference in potential between the hollow element (5) and another element which is separate from it, in such a way as to direct the electron beam towards said separate element; and a de laval nozzle (23), having at least one tapered portion (13), which is tapered towards the separate element and is designed to accelerate a gas flow towards the separate element.. .
Noivion S.r.l.
05/21/15
20150136325
new patent

Plasma processing using multiple radio frequency power feeds for improved uniformity


A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (rf) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber.
Applied Materials, Inc.
05/21/15
20150136210
new patent

Silicon-based solar cells with improved resistance to light-induced degradation


Solar devices with high resistance to light-induced degradation are described. A wide optical bandgap interface layer positioned between a p-doped semiconductor layer and an intrinsic semiconductor layer is made resistant to light-induced degradation through treatment with a hydrogen-containing plasma.
Tel Solar Ag
05/21/15
20150136171
new patent

Liquid or vapor injection plasma ashing systems and methods


A plasma ashing system includes a process chamber including a substrate. A carrier gas supply supplies a carrier gas to the processing chamber.
Lam Research Corporation
05/21/15
20150135993
new patent

Treating particles


A method of treating particles by disaggregating, deagglomerating, exfoliating, cleaning, functionalising, doping, decorating and/or repairing said particles, in which the particles are subjected to plasma treatment in a treatment chamber containing a plurality of electrodes which project therein and wherein plasma is generated by said electrodes which are moved during the plasma treatment to agitate the particles.. .
Perpetuus Research & Development Limited
05/21/15
20150135957
new patent

Organosiloxane films for gas separations


A semipermeable gas separation membrane is plasma deposited from liquid organosiloxane monomer having at least three silicon atoms and an alpha hydrogen atom. The semipermeable membrane may be employed as a gas-selective membrane in combination with a porous substrate..
Applied Membrane Technology, Inc.
05/21/15
20150135770
new patent

Method for producing silicon for solar cells by metallurgical refining process


In order to produce metallurgical grade silicon and solar cell grade polysilicon in batches, a method of the present invention comprises: a step of reduction in an arc furnace, consisting of removing c and co in a silicon reduction atmosphere using silica stone and carbon black by an arc so as to produce metallurgical grade silicon; a step of refining by slag consisting of removing phosphorus (p) and boron (b) by slag; a step of refining by unidirectional solidification consisting of removing metal impurities (fe, al, ti, mn, etc.) by means of unidirectional solidification; and a step of steam plasma-electromagnetism continuous refining consisting of charging a furnace with the unidirectionally solidified silicon and removing boron (b) by a steam plasma torch.. .
Korea Institute Of Industrial Technology
05/21/15
20150135514
new patent

Method of adsorbing target object on mounting table and plasma processing apparatus


A method of adsorbing a target object on a mounting table is provided. The mounting table is provided within a processing vessel that partitions a depressurizable space in a processing apparatus which processes a processing target object within the space.
Tokyo Electron Limited
05/14/15
20150134128

Component temperature control by coolant flow control and heater duty cycle control


Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller.
05/14/15
20150133521

Inhibitors of micrornas that regulate production of atrial natriuretic peptide (anp) as therapeutics and uses thereof


The present invention relates to methods, kits and compositions to treat hypertension and other cardiovascular diseases in a subject, in particular, a method of treating or preventing a cardiovascular disease in a subject comprising administering to a subject at least one anti-mir agent to mirna-425. In some embodiments, an anti-mir agent is a small molecule or an oligonucleotide complementary to at least part of the mir-425 of seq id no: 1, or an anti-mir complementary to at least part of the mirna seed sequence augaca (seq id no: 2).
05/14/15
20150132971

Plasma generation and pulsed plasma etching


One or more plasma etching techniques are provided. Selective plasma etching is achieved by introducing a gas into a chamber containing a photoresist over a substrate, establishing a bias at a frequency to convert the gas to a plasma at the frequency, and using the plasma to etch the photoresist.
05/14/15
20150132970

Substrate processing apparatus and substrate processing method


An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays.
05/14/15
20150132968

Dry-etch selectivity


A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously.
05/14/15
20150132967

Method of processing substrate and substrate processing apparatus


A method of processing a substrate using a substrate processing apparatus that has an electrostatic chuck including an insulating member inside which an electrode is included and provides a plasma process to a substrate mounted on the electrostatic chuck includes a first process of supplying a heat transfer gas having a second gas pressure to a back surface of the substrate while eliminating electric charges in the substrate using plasma of a process gas having a first gas pressure.. .
05/14/15
20150132961

Methods for atomic layer etching


Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element and remote plasma are discussed.
05/14/15
20150132960

Substrate processing apparatus and substrate processing method


A substrate processing apparatus that can appropriately carry out desired plasma processing on a substrate. The substrate is accommodated in an accommodating chamber.
05/14/15
20150132953

Etching of semiconductor structures that include titanium-based layers


Two-step process sequences uniformly etch both tungsten-based and titanium-based structures on a substrate. A sequence of wet etches using peroxide and heated nitric acid uniformly recesses a metal stack that includes w, tin, and tial.
05/14/15
20150132939

Method for depositing metal layers on germanium-containing films using metal chloride precursors


A method is provided for forming a semiconductor device. According to one embodiment, the method includes providing a substrate having a ge-containing film thereon, identifying a first plasma processing recipe that uses a metal chloride precursor to deposit a first metal layer on the ge-containing film at a higher rate than the ge-containing film is etched by the metal chloride precursor, identifying a second plasma processing recipe that uses the metal chloride precursor to etch the ge-containing film at a higher rate than a second metal layer is deposited on the ge-containing film by the metal chloride precursor, performing the first plasma processing recipe to deposit the first metal layer on the ge-containing film, and performing the second plasma processing recipe to deposit the second metal layer on the first metal layer, and where the second metal layer is deposited at a higher rate than the first metal layer..
05/14/15
20150132929

Method for injecting dopant into substrate to be processed, and plasma doping apparatus


Provided is a method for injecting a dopant into a substrate to be processed. A method in one embodiment of the present invention includes: (a) a step for preparing, in a processing container, a substrate to be processed; and (b) a step for injecting a dopant into the substrate by supplying a doping gas containing ash3, an inert gas, and h2 gas to the inside of the processing container, and applying plasma excitation energy to the inside of the processing container.
05/14/15
20150132912

Method for fabricating fin field effect transistors


A method of fabricating a fin field effect transistor (finfet) includes providing a substrate having a first fin and a second fin extending above a substrate top surface, wherein the first fin has a top surface and sidewalls and the second fin has a top surface and sidewalls. The method includes forming an insulation layer between the first and second fins.
05/14/15
20150132909

Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the method


A method of manufacturing a semiconductor device includes forming a preliminary fin-type active pattern extending in a first direction, forming a device isolation pattern covering a lower portion of the preliminary fin-type active pattern, forming a gate structure extending in a second direction and crossing over the preliminary fin-type active pattern, forming a fin-type active pattern having a first region and a second region, forming a preliminary impurity-doped pattern on the second region by using a selective epitaxial-growth process, and forming an impurity-doped pattern by injecting impurities using a plasma doping process, wherein the upper surface of the first region is at a first level and the upper surface of the second region is at a second level lower than the first level.. .
05/14/15
20150132863

Plasma processing apparatus and heater temperature control method


A plasma processing apparatus is provided that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece using an action of the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and holds the workpiece, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a temperature control unit.
05/14/15
20150132770

Pregnancy-associated plasma protein-a2 (papp-a2) polynucleotides


The present invention provides pregnancy associated plasma protein a2 (papp-a2), its nucleotide and amino acid sequences, antisense molecules to the nucleotide sequences which encode papp-a2, expression vectors for the production of purified papp-a2, antibodies capable of binding specifically to papp-a2, hybridization probes or oligonucleotides for the detection of papp-a2-encoding nucleotide sequences, genetically engineered host cells for the expression of papp-a2, and methods for screening for pathologies in pregnant and non-pregnant patients. Methods for screening for altered focal proliferation states in pregnant and/or non-pregnant patients, which include detecting levels of papp-a2, are also described..
05/14/15
20150132711

Plasma treatment device


A plasma treatment device comprises a body portion housing a battery, a gas cylinder, a power supply circuit and a plasma generator comprising a pair of electrodes. The device includes a detachable applicator portion and an elongate duct extending from the generator to convey generated plasma to an outlet of the duct and for directing a plasma plume formed at the outlet onto a treatment area.
05/14/15
20150132602

High purity metallic top coat for semiconductor manufacturing components


A method for coating a component for use in a semiconductor chamber for plasma etching includes providing a component for use in a semiconductor manufacturing chamber, loading the component into a deposition chamber, cold spray coating a metal powder onto the component to form a coating on the component, and anodizing the coating to form an anodization layer.. .
05/14/15
20150132590

Active corrosion protection coatings


The present invention is related to a method for protecting a metal substrate against corrosion comprising the step of: —generating a plasma in a gaseous medium by means of a plasma device; —placing the substrate in contact with the plasma, or in a post-plasma area of said plasma; —introducing in said plasma or in said post-plasma area a corrosion inhibitor along with an organic precursor, thereby depositing a barrier layer comprising the corrosion inhibitor, the deposited layer protecting the metal substrate against corrosion.. .
05/14/15
20150132505

Plasma processing apparatus and plasma processing method


A plasma processing apparatus is provided. According to the apparatus, a main antenna connected to a high frequency power source and an auxiliary antenna electrically insulated from main antenna is arranged.
05/14/15
20150132312

Systems and methods for extracorporeal blood modification


The present invention generally relates to systems and methods for targeted removal of a substance or biomolecule such as a protein from a biological fluid, such as blood. In some cases, the blood may be withdrawn from a subject, treated, and returned to the subject.
05/14/15
20150132285

Proteinase-engineered cancer vaccine induces immune responses to prevent cancer and to systemically kill cancer cells


The present invention provides a method of making a proteinase-engineered cancer vaccine for treating a cancer patient, especially for cancer patient at advanced/metastatic stage. The cancer vaccine comprises dead cancer cells with unbroken plasma membrane wherein the extracellular proteins and extracellular portion of membrane proteins are cleaved by proteinase digestion.


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