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Plasma patents

      

This page is updated frequently with new Plasma-related patent applications.




 Harmonic cold plasma device and associated methods patent thumbnailHarmonic cold plasma device and associated methods
A method for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonics. The unit includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors.
Plasmology4, Inc.


 Plasma light source apparatus and light source system including the same patent thumbnailPlasma light source apparatus and light source system including the same
A plasma light source apparatus includes a first laser generator configured to generate a first laser. A second laser generator is configured to generate a second laser.
Samsung Electronics Co., Ltd.


 System,  recovering mining fluids from mining byproducts patent thumbnailSystem, recovering mining fluids from mining byproducts
A system, method and apparatus for recovering mining fluids from mining byproducts uses a plasma arc torch and a screw feed unit. The plasma arc torch includes a cylindrical vessel, a first tangential inlet/outlet connected to or proximate to a first end, a second tangential inlet/outlet connected to or proximate to a second end, an electrode housing connected to the first end such that a first electrode is (a) aligned with a longitudinal axis of the cylindrical vessel, and (b) extends into the cylindrical vessel, and a hollow electrode nozzle is connected to the second end such that the hollow electrode nozzle is aligned with the longitudinal axis, the hollow electrode nozzle is partially disposed within the cylindrical vessel and outside the cylindrical vessel.
Foret Plasma Labs, Llc


 Mutually induced filters patent thumbnailMutually induced filters
A mutually induced filter for filtering radio frequency (rf) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering rf power from one of the signals supplied to the first load element.
Lam Research Corporation


 Method of manufacturing photovoltaic device having ultra-shallow junction layer patent thumbnailMethod of manufacturing photovoltaic device having ultra-shallow junction layer
The present invention relates to a method of manufacturing a photovoltaic device having an ultra-shallow junction layer. In the method, a crystalline silicon substrate is cleaned and a first doped semiconductor layer with 1.12 ev bandgap and 5˜80 nm of thickness is grown on the crystalline silicon substrate by high density plasma electron cyclotron resonance cvd in a preparation condition of a temperature of the crystalline silicon substrate ranging from 50° c.
National Central University


 Thin film transistor, array substrate and display device having the same, and  manufacturing thereof patent thumbnailThin film transistor, array substrate and display device having the same, and manufacturing thereof
The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.. .
Boe Technology Group Co., Ltd.


 Finfet device and  forming and monitoring quality of the same patent thumbnailFinfet device and forming and monitoring quality of the same
A finfet structure with a gate structure having two notch features therein and a method of forming the same is disclosed. The method includes the steps of: forming a plurality of fins supported by a substrate; depositing a gate layer on the fins; and etching the gate layer by plasma etching with an etching gas to form a gate having two notch features.
Taiwan Semiconductor Manufacturing Co., Ltd.


 High aspect ratio 3-d flash memory device patent thumbnailHigh aspect ratio 3-d flash memory device
Methods of selectively etching tungsten from the surface of a patterned substrate are described. The etch electrically separates vertically arranged tungsten slabs from one another as needed, for example, in the manufacture of vertical flash memory devices.
Applied Materials, Inc.


 Wire bond cleaning method and wire bonding recovery process patent thumbnailWire bond cleaning method and wire bonding recovery process
Methods, systems and devices are disclosed for performing a semiconductor processing operation. In some embodiments this includes configuring a wire bonding machine to perform customized movements with a capillary tool of the wire bonding machine, etching bulk contaminants over one or more locations of a semiconductor device with the capillary tool, and applying plasma to the semiconductor device to remove residual contaminants..
Skyworks Solutions, Inc.


 Plasma etch singulated semiconductor packages and related methods patent thumbnailPlasma etch singulated semiconductor packages and related methods
A method of forming a plurality of semiconductor packages includes providing an array of unsingulated semiconductor packages that are at least partially encapsulated in an encapsulant. The array of unsingulated semiconductor packages may be coupled with a lead frame or a substrate.
Semiconductor Components Industries, Llc


Method of dicing a wafer and semiconductor chip

A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including at least one electronic component, the active regions extending from a first surface of the wafer into the wafer by a height and being separated by separation regions, forming at least one trench in the wafer by plasma etching in at least one separation region from the first surface of the wafer. The at least one trench is extending into the wafer farther than the plurality of active regions.
Infineon Technologies Ag

Methods for minimizing sidewall damage during low k etch processes

Methods for minimizing sidewall damage during low k etch processes are disclosed. The methods etch the low k layers using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of n≡c—r; (n≡c—)—(r)—(—c≡n); rx[—c═n(rz)]y; and r(3-a)—n—ha, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each r independently has the formula hafbcc with a=0-11, b=0-11, and c=0-5..
L'air Liquide, Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Cluadeq

Systems and methods for ultrahigh selective nitride etch

A method for selectively etching a silicon nitride layer on a substrate includes arranging a substrate on a substrate support of a substrate processing chamber. The substrate processing chamber includes an upper chamber region, an inductive coil arranged outside of the upper chamber region, a lower chamber region including the substrate support and a gas dispersion device.
Lam Research Corporation

Oxidation resistant induction devices

Certain embodiments described herein are directed to induction devices comprising an oxidation resistant material. In certain examples, the induction device comprises a coil of wire that is produced from the oxidation resistant material.
Perkinelmer Health Sciences, Inc.

Plasma processing apparatus, operating plasma processing apparatus, and power supply device

A plasma processing apparatus according to an embodiment includes a processing container, a mounting table, a plurality of heaters, and a power supply device. The mounting table is provided in the processing container.
Tokyo Electron Limited

Connection control method

A connection control method in a substrate processing apparatus is provided. The substrate processing apparatus comprises: a depressurized processing room; a susceptor that is provided in the processing room and configured to mount a wafer thereon; a hf high frequency power supply configured to apply a high frequency voltage for plasma generation to the susceptor; a lf high frequency power supply configured to apply a high frequency voltage for a bias voltage generation to the susceptor; and a dc voltage applying unit configured to apply a dc voltage of a rectangle-shaped wave to the susceptor, capable of improving a processing controllability in an etching process.
Tokyo Electron Limited

Support unit, substrate treating apparatus including the same, and treating a substrate

The inventive concepts provide a substrate treating apparatus. The substrate treating apparatus includes a process chamber in which a treatment space is provided, a support unit supporting a substrate in the process chamber, a gas supply unit supplying a gas into the process chamber, and a plasma source generating plasma from the gas.
Semes Co., Ltd.

System and treating substrate

Provided are a system and a method for treating a substrate. The substrate treating system may include a process chamber including a body with an open top and a dielectric window hermetically sealing the top of the body from an outside, a supporting unit provided in the process chamber to support a substrate, a gas-supplying unit supplying a process gas into the process chamber, a plasma source provided outside the process chamber to generate plasma from the process gas supplied into the process chamber, and a heating unit heating the dielectric window.
Semes Co., Ltd.

Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance

A bulk, sintered solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide.
Applied Materials, Inc.

Plasma processing equipment and plasma generation equipment

A plasma processing equipment includes a vacuum processing chamber, an insulating material, a gas inlet, a high frequency induction antenna provided at an upper outside of the vacuum processing chamber, a magnetic field coil, a yoke for controlling distribution of a magnetic field in the vacuum processing chamber, a high frequency power supply for generating plasma and supplying a high frequency current to the antenna, and a power supply for supplying power to the magnetic field coil. The antenna is divided into n high frequency induction antenna elements are arranged in tandem on one circle so that a high frequency current delayed sequentially by λ (wavelength of high frequency power supply)/n flows clockwise through the antenna elements arranged in tandem via a delay unit, and a magnetic field is applied from the magnetic field coil to generate electron cyclotron resonance (ecr) phenomenon..
Hitachi High-technologies Corporation

Terahertz modulator based on low-dimension electron plasma wave and manufacturing method thereof

A terahertz modulator based on low-dimension electron plasma wave, a manufacturing method thereof, and a high speed modulation method are provided. The terahertz modulator includes a plasmon and a cavity.
Suzhou Institute Of Nano-tech And Nano-bionics (sinano), Chinese Academy Of Sciences

Method for controlling cancer metastasis or cancer cell migration by modulating the cellular level of lysyl trna synthetase

The present invention relates to a novel function of lysyl trna synthetase, that is, lysyl trna synthetase interacts with 67lr through translocation of krs into plasma membrane, and so enhances tumor (or cancer) cell migration, thereby having an effect on cancer metastasis. More specifically, it relates to method for controlling cancer metastasis or cancer cell migration by modulating an cellular level of lysyl trna synthetase, an use of an expression vector comprising a construct inhibiting krs expression for preventing or treating cancer, an use of an agent inhibiting krs activity for preventing or treating cancer, a method for screening an agent which modulates cancer metastasis or cancer cell migration, a method for screening an agent inhibiting an interaction between krs and 67lr.
Medicinal Bioconvergence Research Center

Bypass valve assembly for turbine generators

A bypass valve assembly for use in turbine generators includes a valve body defining a central bore and a plurality of passageways. Each passageway has a smaller area at an inlet portion and a larger area at an outlet portion to define a flared passageway.
Turbo Parts, Llc

Method for depositing dielectric film in trenches by peald

A method for depositing a dielectric film in a trench by plasma-enhanced atomic layer deposition (peald) includes depositing a dielectric film in a trench of a substrate by peald under conditions wherein the wet etch rate of the depositing film on a top surface of the substrate is substantially equivalent to or higher than the wet etch rate of the depositing film at a sidewall of the trench, wherein a precursor fed into the reaction space has —n(ch3)2 as a functional group.. .
Asm Ip Holding B.v.

Film formation apparatus, forming film, forming multilayer film or light-emitting element, and cleaning shadow mask

The inventors have reached the idea of a film formation apparatus including a film formation chamber, a removal chamber, two sluice valves provided apart from each other between the film formation chamber and the removal chamber, and a shadow mask transfer mechanism. The film formation chamber includes an evaporation source, and the removal chamber includes a parallel plate plasma source and a shadow mask stage.
Semiconductor Energy Laboratory Co., Ltd.

Thermal spray slurry, thermal spray coating and forming thermal spray coating

Provided is a thermal spray slurry capable of satisfactorily forming a thermal spray coating with superior plasma erosion resistance. The invention provides a thermal spray slurry comprising thermal spray particles and a dispersion medium.
Fujimi Incorporated

Rhamnose promoter expression system

The prokaryotic signal sequence is selected from signal peptides of periplasmatic binding proteins for sugars, amino acids, vitamins and ions. The expression of the nucleic acid sequence is controlled by the promoter region.

Protein film production method

This technique provides a protein film production method which can form a protein film, with denaturation of protein being prevented. The protein film production method includes mixing a protein with an aqueous solvent, to thereby form an aqueous protein solution pas1, and treating the aqueous protein solution pas1 with plasma generated by a plasma generator 100.
Kyorin University

A process for producing a security film and a security film

The invention concerns a process for producing a security film, comprising: forming a polymeric film substrate having first and second surfaces and comprising one or more migratory additives; plasma treating at least a part of at least one surface of the polymeric film substrate; and promptly contacting a foil with the at least one part of the plasma treated surface of the polymeric film substrate such that the foil adheres to the polymeric film substrate.. .
Innovia Films Limited

Resin-rubber composite

A resin-rubber composite in which a polyamide-based resin-molded product or a polyphenylene sulfide-based resin-molded product is directly vulcanization-bonded to a peroxide-crosslinkable nonpolar rubber composition, which forms a rubber layer, without interposing an adhesive, wherein both resin-molded products have a polymerized film with a radical, which is formed by activating the surface of the product, in the case of polyamide-based resin-molded products, by low-pressure plasma treatment by a microwave method using inert gas, or by activating the surface of the product, in the case of polyphenylene sulfide-based resin-molded products, by low-pressure plasma treatment by a microwave method using active gas, and then performing low-pressure plasma treatment by a microwave method using a hydrocarbon-based monomer in both cases. The resin-rubber composite can be effectively used for drum seals, automobile parts such as side cover seals for transmissions, anti-vibration rubber, resin rubber laminate hoses, and the like..
Nok Corporation

Method of joining metals and non-metals with foil and products so joined

A method for the joining of material including metal and non-metals employing foil positioned between as well as structures produced thereby is provided. Such a method may employ thermal plasma as a means to produce the heat necessary for such joining methods.
Mhi Health Devices, Llc

Process and producing powder particles by atomization of a feed material in the form of an elongated member

The present disclosure relates to a process and an apparatus for producing powder particles by atomization of a feed material in the form of an elongated member such as a wire, a rod or a filled tube. The feed material is introduced in a plasma torch.
Tekna Plasma Systems Inc.

Wearable cold plasma system

A system including a wearable cold plasma system, including a wearable cold plasma applicator configured to couple to and deliver a cold plasma to a surface of a user wearing the wearable cold plasma device.. .
Plasmology4, Inc.

Integrated pump control for dynamic control of plasma field

A pump and pump controller which uses an algorithm to quickly achieve and maintain a stable plasma field in a surgical site are provided. The algorithm calculates an electrical characteristic value to determine if the suction rate by the pump should be increased or decreased to achieve a stable plasma field.

Bonded microsphere filter

A filter material of microspheres bonded in a close-packed arrangement is provided. A filter device comprising a funnel containing a filter material of microspheres bonded in a close-packed arrangement is provided.
1866402 Ontario Limited

Agent for inducing interferon production containing lactic acid bacteria

This invention provides an ifn inducer comprising, as an active ingredient, lactic acid bacteria and capable of inducing ifn production, an immunopotentiating agent or prophylactic agent against virus infection comprising such inducer, and a food or drink product comprising such ifn inducer and having ifn-inducing activity, immunopotentiating activity, or prophylactic activity against virus infection. The agent for inducing ifn production comprises, as active ingredients, lactic acid bacteria that can activate plasmacytoid dendritic cells (pdcs) and promote ifn production, such as lactococcus garvieae nbrc100934, lactococcus lactis subsp.
Kirin Holdings Kabushiki Kaisha

Composition for improving stability of stem cells

The present invention relates to a composition capable of improving storage stability of stem cells. More specifically, the present invention relates to a composition which contains a serum or a plasma for improving cold storage stability of stem cells.

Method and operating traveling spark igniter at high pressure

An ignition circuit and a method of operating an igniter (preferably a traveling spark igniter) in an internal combustion engine, including a high pressure engine. A high voltage is applied to electrodes of the igniter, sufficient to cause breakdown to occur between the electrodes, resulting in a high current electrical discharge in the igniter, over a surface of an isolator between the electrodes, and formation of a plasma kernel in a fuel-air mixture adjacent said surface.
Knite, Inc.

Electrical power generation systems and methods regarding same

A solid or liquid fuel to plasma to electricity power source that provides at leas; one of electrical and thermal power comprising (i) at least one reaction cell for the catalysis of atomic hydrogen to form hydrinos, (ii) a chemical feel mixture comprising at least two components chosen from: a source of h2o catalyst or h2o catalyst; a source of atomic hydrogen or atomic hydrogen; reactants to form the source of h2o catalyst or h2o catalyst and a source of atomic hydrogen or atomic hydrogen; one or more reactants to initiate the catalysis of atomic hydrogen; and a material to cause the feel to be highly conductive, (iii) a fuel injection system such as a railgun shot injector, (iv) at least one set of electrodes that confine the fuel and an electrical power source that provides repetitive short bursts of low-voltage, high-current electrical energy to initiate rapid kinetics of the hydrino reaction and an energy gain due to forming hydrinos to torn! a brilliant-light emitting plasma, (v) a product recovery system such as at least one of an augmented plasma railgun recovery system and a gravity recovery system (vi) a fuel pelletizer or shot maker comprising a s me her. A source or hydrogen and a source of h2o, a dripper and a water bath to form fuel pellets or shot, and an agitator to teed shot into the injector, and (vii) a power converter capable of converting the high-power light output of the cell into electricity such as a concentrated solar power device comprising a plurality of ultraviolet (uv) photoelectric cells or a plurality of photoelectric cells, and a uv window..
Brilliant Light Power, Inc

Method for manufacturing semiconductor device

Variation in electrical characteristics of a semiconductor device including an oxide semiconductor is inhibited and the reliability thereof is improved. The oxide semiconductor is formed over a substrate.
Semiconductor Energy Laboratory Co., Ltd.

Method for manufacturing semiconductor device

A change in electrical characteristics of a semiconductor device including an oxide semiconductor is prevented, and the reliability of the semiconductor device is improved. An oxide semiconductor is formed over a substrate; an insulator is formed over the oxide semiconductor; a metal oxide is formed over the insulator; a conductor is formed over the metal oxide; a portion of the oxide semiconductor is exposed by removing the conductor, the metal oxide, and the insulator over the oxide semiconductor; plasma treatment is performed on a surface of the exposed portion of the oxide semiconductor; and a nitride insulator is formed over the exposed portion of the oxide semiconductor and over the conductor.
Semiconductor Energy Laboratory Co., Ltd.

Method for preparing titanium-aluminum alloy thin film

A method for preparing a tial alloy thin film, wherein a reaction chamber is provided, in which at least one substrate is placed; an aluminum precursor and a titanium precursor are introduced into the reaction chamber, wherein the aluminum precursor has a molecular structure of a structural formula (i); and the aluminum precursor and the titanium precursor are brought into contact with the substrate so that a titanium-aluminum alloy thin film is formed on the surface of the substrate by vapor deposition. The method solves the problem of poor step coverage ability and the problem of incomplete filling with regard to the small-size devices by the conventional methods.
Jiangnan University

Wafer processing method

A wafer processing method including a protective plate attaching step of attaching a protective plate to the front side of a wafer, a support member providing step of providing a support member on the back side of the wafer, a protective plate cutting step of cutting the protective plate along an area corresponding to each division line formed on the front side of the wafer, thereby exposing each division line, and a plasma etching step of performing plasma etching through the protective plate to each division line of the wafer, thereby etching each division line to divide the wafer into individual device chips.. .
Disco Corporation

Methods for formation of low-k aluminum-containing etch stop films

Dielectric alo, aloc, alon and alocn films characterized by a dielectric constant (k) of less than about 10 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers and/or diffusion barriers. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ulk dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) in an iald process chamber and the aluminum-containing compound is allowed to adsorb onto the surface of the substrate.
Lam Research Corporation

Laser irradiation apparatus and laser irradiation method

A laser irradiation apparatus may include a plasma generator, a laser unit configured to output a pulsed laser light beam, and a controller. The plasma generator may be configured to supply an atmospheric pressure plasma containing a dopant to a predetermined region on a semiconductor material.
Gigaphoton Inc.

Ultra-high modulus and etch selectivity boron-carbon hardmask films

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate.
Applied Materials, Inc.

Method for producing a pillar structure in a semiconductor layer

A method for producing a pillar structure in a semiconductor layer, the method including providing a structure including, on a main surface, a semiconductor layer. A patterned hard mask layer stack is provided on the semiconductor layer that includes a first layer in contact with the semiconductor layer and a second layer overlying and in contact with the first layer.
Imec Vzw

Plasma etching method

Disclosed is a plasma etching method which is performed using a plasma processing apparatus that is a capacitively coupled plasma processing apparatus, and includes: a processing container; a gas supply unit that supply an etching processing gas into the processing container; a placing table including a lower electrode; an upper electrode provided above the placing table; and a plurality of electromagnets including a plurality of coils, or a plurality of electromagnets each including a coil, on the upper electrode. The plasma etching method includes generating plasma of the processing gas to perform a plasma etching on a single film of a workpiece placed on the placing table; and controlling a current supplied to the plurality of electromagnet to change a distribution of an etching rate of the single film in the diametric direction with respect to the central axis during the generating of the plasma of the processing gas..
Tokyo Electron Limited

Plasma generator, annealing device, deposition crystallization apparatus and annealing process

A plasma generator, a plasma annealing device, a deposition crystallization apparatus and a plasma annealing process are disclosed. The plasma generator includes: a gas chamber; a gas intake member configured to introduce a gas into the gas chamber; a cathode and an anode that are configured to apply an electric field to the gas introduced into the gas chamber to ionize the gas into plasma; a cooling water circulation member configured to control a temperature of the plasma generator; and a plasma beam outlet disposed on a top face of the gas chamber.
Boe Technology Group Co., Ltd.

Temperature control in rf chamber with heater and air amplifier

Systems, methods, and computer programs are presented for controlling the temperature of a window in a semiconductor manufacturing chamber. One apparatus includes a heater for receiving and heating a flow of air and an air amplifier coupled to pressurized gas.
Lam Research Corporation

Plasma processing apparatus

Detection accuracy of a power of a progressive wave and detection accuracy of a power of a reflection wave can be improved. In a plasma processing apparatus, a first directional coupler is provided in a first waveguide which is configured to connect a microwave generating unit and a first port of a circulator.
Tokyo Electron Limited

Uniformity control circuit for use within an impedance matching circuit

An impedance matching circuit (imc) is described. The imc includes a first circuit that includes a first plurality of tuning elements defined along a path.
Lam Research Corporation





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