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Plasma patents



      

This page is updated frequently with new Plasma-related patent applications.




Date/App# patent app List of recent Plasma-related patents
07/21/16
20160212833 
 Low electron temperature, edge-density enhanced, surface-wave plasma (swp) processing method and apparatus patent thumbnailnew patent Low electron temperature, edge-density enhanced, surface-wave plasma (swp) processing method and apparatus
A surface wave plasma (swp) source couples microwave (mw) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (te). An icp source, is provided between the swp source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts.
Tokyo Electron Limited


07/21/16
20160212825 
 Electronic device and circuit module thereof patent thumbnailnew patent Electronic device and circuit module thereof
A circuit module includes a board, a boosting circuit, a processing and a plasma tube. The board is for connecting with a circuit board device with opposite thicknesswise sides.
Avexir Technologies Corporation


07/21/16
20160212824 
 Electronic device and circuit module thereof patent thumbnailnew patent Electronic device and circuit module thereof
An electronic device and circuit module thereof is provided. The circuit module includes a board, a boosting circuit and a plasma tube.
Avexir Technologies Corporation


07/21/16
20160211525 
 Negative electrode,  producing the same, and battery patent thumbnailnew patent Negative electrode, producing the same, and battery
A method for producing a negative electrode, including a step of subjecting a copper foil to a plasma treatment, a step of coating the copper foil subjected to the plasma treatment, with a slurry including an active material containing a silicon atom, and a step of subjecting the copper foil coated with the slurry to a heat treatment to form an intermetallic compound of copper and silicon at an interface between the copper foil and the active material. A negative electrode including a copper foil, an active material layer including an active material containing a silicon atom on the copper foil, and copper silicide at an interface between the copper foil and the active material..
Nec Energy Devices, Ltd.


07/21/16
20160211385 
 Semiconductor device and semiconductor device manufacturing method patent thumbnailnew patent Semiconductor device and semiconductor device manufacturing method
A simplified manufacturing process stably produces a semiconductor device with high electrical characteristics, wherein platinum acts as an acceptor. plasma treatment damages the surface of an oxide film formed on a n− type drift layer deposited on an n+ type semiconductor substrate.
Fuji Electric Co., Ltd.


07/21/16
20160211353 
 Method of manufacturing oxide thin film transistor patent thumbnailnew patent Method of manufacturing oxide thin film transistor
There is provided a method of manufacturing an oxide thin film transistor (tft). The method includes forming a gate electrode on a substrate, forming a gale insulating layer on the gate electrode, forming an oxide semiconductor layer including a channel layer on the gate insulating layer, forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer, first plasma processing the substrate on which the source electrode and the drain electrode are formed at a carbon (c) atmosphere, secondly plasma processing the substrate al a nitrogen oxide atmosphere, and sequentially forming a first protective layer and a second protective layer on the substrate..
Samsung Display Co., Ltd.


07/21/16
20160211186 
 Plasma processing apparatus patent thumbnailnew patent Plasma processing apparatus
A processing apparatus and a processing method for a semiconductor wafer, which allow stable end point detection, are provided. In the plasma processing apparatus or method in which a processing-target film layer of a film structure including a plurality of film layers formed in advance on a surface of a wafer mounted on a sample stage deployed within a processing chamber inside a vacuum vessel, by using plasma formed with the processing chamber, intensities of lights of a plurality of wavelengths are detected using data composed of results of reception of lights during a plurality of different time-intervals by an optical receiver which receives lights of the plurality of wavelengths from an inside of the processing chamber while processing is going..
Hitachi High-technologies Corporation


07/21/16
20160211178 
 Method of dicing a wafer and semiconductor chip patent thumbnailnew patent Method of dicing a wafer and semiconductor chip
A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including at least one electronic component, the active regions extending from a first surface of the wafer into the wafer by a height and being separated by separation regions, the separation regions being free from metal, forming at least one trench in the wafer by plasma etching in at least one separation region from the first surface of the wafer. The at least one trench is extending into the wafer farther than the plurality of active regions.
Infineon Technologies Ag


07/21/16
20160211156 
 Ion beam etching system patent thumbnailnew patent Ion beam etching system
The disclosed embodiments relate to methods and apparatus for removing material from a substrate. In various implementations, conductive material is removed from a sidewall of a previously etched feature such as a trench, hole or pillar on a semiconductor substrate.
Lam Research Corporation


07/21/16
20160211153 
 Plasma processing method and plasma processing apparatus patent thumbnailnew patent Plasma processing method and plasma processing apparatus
A plasma processing method including disposing a wafer to be processed on a sample stage disposed in a processing chamber within a vacuum vessel, supplying an electric field using first high frequency power for plasma forming into the processing chamber and forming plasma, and supplying second high frequency power for bias potential forming to electrodes disposed within the sample stage and processing a film on a top surface of the wafer. At least the first or second high frequency power repeats a change of becoming a plurality of predetermined amplitudes for predetermined periods with a predetermined repetition period.
Hitachi High-technologies Corporation


07/21/16
20160211150 
new patent

Etching method


An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated.
Tokyo Electron Limited


07/21/16
20160211149 
new patent

Etching method


There is provided a method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the second region formed to have a recess, the first region provided to fill the recess and to cover the second region, and a mask provided on the first region. The method includes: (a) generating a plasma of a processing gas containing a fluorocarbon gas in a processing chamber where the target object is accommodated and forming a deposit containing fluorocarbon on the target object; (b) generating a plasma of a processing gas containing an oxygen-containing gas and an inert gas in the processing chamber; and (c) etching the first region by radicals of fluorocarbon contained in the deposit.
Tokyo Electron Limited


07/21/16
20160211148 
new patent

Etching method


An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride. The target object includes the second region, the first region and a mask.
Tokyo Electron Limited


07/21/16
20160211147 
new patent

Method of plasma-enhanced atomic layer etching


A method for etching a layer on a substrate includes at least one etching cycle, wherein an etching cycle includes: continuously providing an inert gas into the reaction space; providing a pulse of an etching gas into the continuous inert gas flow upstream of the reaction space to chemisorb the etching gas in an unexcited state on a surface of the substrate; and providing a pulse of rf power discharge between electrodes to generate a reactive species of the inert gas in the reaction space so that the layer on the substrate is etched.. .
Asm Ip Holding B.v.


07/21/16
20160211146 
new patent

Semiconductor manufacturing device, management method thereof, and manufacturing semiconductor device


Manufacturing yield of semiconductor device is improved by suppressing generation of foreign objects in a high-density plasma processing device. A high-density plasma cvd device includes an electrode, a guard ring surrounding an outer circumference of the electrode, an insulating member which is arranged over the guard ring and which surrounds the outer circumference of the electrode, and a plurality of spacers arranged between the guard ring and the insulating member.
Renesas Electronics Corporation


07/21/16
20160211123 
new patent

Plasma processing monitoring plasma processing apparatus


A plasma processing apparatus which generates plasma in a processing vessel supplied with a gas by applying a high-frequency voltage between first and second electrodes and performs plasma processing on a substrate to be processed, the plasma processing apparatus includes a recording unit configured to record a value, which represents a characteristic of the plasma processing performed on the substrate to be performed, in a time series, a identifying unit configured to identify a tendency of a time-series change of values recorded by the recording unit, a determination unit configured to determine whether an alarm is required based on the identified tendency of the time-series change and an alarm unit configured to output the alarm when it is determined that the alarm is required.. .
Sakai Display Products Corporation


07/21/16
20160211122 
new patent

Plasma-chemical coating apparatus


In a known plasma-chemical coating apparatus, a plasma chamber is provided within which at least one linear antenna is arranged for producing a plasma by means of electromagnetic power, in which a supply for a carrier gas terminates and which comprises a plasma exit opening in the direction of a treatment chamber for a plasma-assisted modification of a substrate. Starting from this, to achieve cleaning cycles as in coating apparatuses with comparatively slow coating processes, it is suggested according to the invention that the plasma exit opening is configured as an elongated narrowing and defined preferably on both sides by cylinders which extend in parallel with each other and are rotatable about their cylinder axis, and that a cleaning zone is respectively provided for each of the cylinders, into which an area of the outer surface of the respective cylinder which is to be cleaned can be introduced by rotation about the cylinder axis..
W & L Coating Systems Gmbh


07/21/16
20160211121 
new patent

Chemistry compatible coating material for advanced device on-wafer particle performance


A method includes feeding powder comprising a yttrium oxide into a plasma spraying system, wherein the powder comprises a majority of donut-shaped particles, each of the donut-shaped particles having a spherical body with indentations on opposite sides of the spherical body. The method further includes plasma spray coating an article to apply a ceramic coating onto the article, wherein the ceramic coating comprises the yttrium oxide, wherein the donut-shaped particles cause the ceramic coating to have an improved morphology and a decreased porosity as compared to powder particles of other shapes, wherein the improved surface morphology comprises a reduced amount of surface nodules..
Applied Materials, Inc.


07/21/16
20160211120 
new patent

Method for presetting tuner of plasma processing apparatus and plasma processing apparatus


Disclosed is a method for presetting a tuner that matches a power required for plasma emission in a plasma processing apparatus. The method includes: obtaining a relationship of a time lapse from power supply, an emission intensity of plasma, and a setting position of the tuner by emitting plasma; differentiating the emission intensity by time to calculate a time when an increase rate of the emission intensity becomes maximum; and setting the setting position of the tuner at a time, which is obtained by subtracting a time required from the setting of the tuner until the setting is reflected on the emission intensity from the time when the increase rate of the emission intensity becomes maximum, as a preset position..
Tokyo Electron Limited


07/21/16
20160209753 
new patent

Radiation source, lithographic apparatus device manufacturing method, sensor system and sensing method


A radiation source for a lithographic apparatus, in particular a laser-produced plasma source includes a fan unit surrounding but not obstructing the collected radiation beam that is operated to generate a flow in a buffer gas away from the optical axis. The fan unit can include a plurality of flat or curved blades generally parallel to the optical axis and driven to rotate about the optical axis..
Asml Netherlands B.v.


07/21/16
20160208403 
new patent

Brushless rotary plasma electrode structure and film coating system


A brushless rotary plasma electrode structure is disclosed. The brushless rotary plasma electrode structure includes a main body, a plurality of guided portions, and a plurality of conducting-through members.
Industrial Technology Research Institute


07/21/16
20160208380 
new patent

Gas delivery and distribution for uniform process in linear-type large-area plasma reactor


An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube.
Applied Materials, Inc.


07/21/16
20160208377 
new patent

Tantalum sputtering target and producing same


The present invention yields effects of being able to reduce the integral power consumption for burn-in of the tantalum target, easily generate plasma, stabilize the deposition rate, and reduce the resistance variation of the film by controlling the crystal orientation of the target.. .

07/21/16
20160208305 
new patent

Identification of mycoplasm contamination using raman spectroscopy


A manufacturing method comprises collecting a sample from a cell culture used by a manufacturing application, and controlling a raman spectrometer to collect a raman spectrum of a targeted volume within the sample. The method further comprises obtaining reference spectra uniquely associated with a known cell line, which comprise at least two of: spectral measurements of mycoplasma by itself, a contaminated cell line, and a pure cell line.
Battelle Memorial Institute


07/21/16
20160208259 
new patent

Targeting micrornas for metabolic disorders


Provided herein are methods and compositions for the treatment of metabolic disorders. Also provided herein are methods and compositions for the reduction of blood glucose level, the reduction of gluceoneogenesis, the improvement of insulin resistance and the reduction of plasma cholesterol level.
Eth Zurich


07/21/16
20160207769 
new patent

Method to synthesize bulk iron nitride


Bulk iron nitride can be synthesized from iron nitride powder by spark plasma sintering. The iron nitride can be spark plasma sintered at a temperature of less than 600° c.
Sandia Corporation


07/21/16
20160207642 
new patent

Electrodeless plasma thruster


A plasma propulsion system with no internal electrodes is described. Gas is flowed into an insulated axisymmetric plasma liner.
The Regents Of The University Of Michigan


07/21/16
20160207133 
new patent

Method of manufacturing small-diameter stainless pipe


A method of manufacturing a stainless pipe is provided. The method includes gradually curving the stainless pipe into a ring type, plasma-welding opposite ends of the curved stainless pipe so that back beads are formed, additionally tig-welding the plasma-welded part to form bead mountings, externally applying pressure force onto an outer portion of the stainless pipe while inserting a mandrel into the welded stainless pipe such that the mandrel comes into contact with the back beads, thereby flattening the back beads, removing the bead mountains, setting an outer diameter of the stainless pipe, rf heat-treating the welded part, cooling the welded part, and a second sizing stage..
Wooseok Sts Co., Ltd.


07/21/16
20160207113 
new patent

Apparatus for producing fine particles and producing fine particles


An apparatus and a method for producing fine particles capable of increasing the production and producing fine particles at low costs by feeding a large quantity of material efficiently into the plasma. The apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles into the vacuum chamber from material feeing ports, a plurality of electrodes connected to the vacuum chamber, tip ends of which protrude into the vacuum chamber to generate plasma and a collecting device connected to the vacuum chamber and collecting fine particles, which generates discharge inside the vacuum chamber and produces the fine particles from the material, in which the material feeding ports of the material feeding device are arranged in a lower side than the plural electrodes in the vertical direction in the vacuum chamber..
Panasonic Intellectual Property Management Co., Ltd.


07/21/16
20160207078 
new patent

Optical arrangement, in particular plasma light source or euv lithography system


An optical arrangement, in particular a plasma light source (1′) or an euv lithography apparatus, with a housing (2), which encloses an interior housing space (3), a vacuum generating unit for generating a vacuum in the housing (2), at least one surface (13), which is disposed in the interior housing space (3), a cleaning device (15) which removes contaminating substances (14) deposited on the surface (13), and also a monitoring device (25) which monitors the surface (13), the monitoring device (25) having monitoring optics (26) that can be directed onto the surface (13). The cleaning device (15) is configured to remove the deposited contaminating substances (14) by the discharge of co2 in the form of co2 pellets (17)..
Carl Zeiss Smt Gmbh


07/21/16
20160207052 
new patent

Electrodischarge generating low-frequency powerful pulsed and cavitating waterjets


An electrodischarge apparatus has a nozzle that includes a discharge chamber that has an inlet for receiving water and an outlet. The apparatus has a first electrode extending into the discharge chamber that is electrically connected to one or more high-voltage capacitors.
Vln Advanced Technologies Inc.


07/21/16
20160206909 
new patent

Volatile organic compound disposal


The voc disposal system disclosed herein includes a plasma chamber and a vent chamber. The plasma chamber includes one or more bands of plasma igniters that produce a field of free radicals across a volume of the plasma chamber.
Paragon Waste Solutions, Llc.


07/21/16
20160206737 
new patent

Use of plasma-treated liquids to treat herpes keratitis


The present invention is directed toward the use of non-thermal plasma-treated liquids as treatment options for herpes keratitis.. .
Drexel University


07/21/16
20160206696 
new patent

Method of repairing age and disease immune dysfunction and cellular senescence with lymphoid stem cells and then re-applying those for therapeutic use


This invention relates to methods for treatment of diseases of ageing including immunosenescence, immune dysfunction, inflammation and impairment of early lymphoid lineage differentiation. The invention more specifically relates to the use of granulocyte colony stimulating factors to assist in stem cell mobilization, optionally in combination with the application of a method of delivering precise magnetic field patterns which agree with the body's own natural magnetic field patterns, and further in combination with re-infusion of previously collected autologous cells and/or plasma, optionally including allogeneic (healthy donor) cells and blood plasma..
Advanced Neuroregenerative Therapies, Llc


07/21/16
20160206657 
new patent

Compositions and minimally invasive methods for treating incomplete tissue repair


Methods are described for using compositions containing platelet-rich plasma for the treatment of a variety of tissue lesions. Particularly, delivery of platelet-rich plasma to bone tissue particularly a vertebral body or in combination with a bone graft are disclosed..

07/21/16
20160206646 
new patent

Bruton's tyrosine kinase as anti-cancer drug target


Receptor protein kinases (rptks) transmit extracellular signals across the plasma membrane to cytosolic proteins, stimulating formation of complexes that regulate key cellular functions. Over half of the known tyrosine kinases are implicated in human cancers and are therefore highly promising drug targets.
The Research Foundation For The State University Of New York


07/21/16
20160206551 
new patent

Methods for the repair and rejuvenation of tissues using platelet-rich plasma compositions


This application relates to cosmetic methods for improving skin conditions. The methods generally include the administration of platelet-rich plasma and cultured autologous cells to a subject after a micro-needling procedure has been performed.

07/14/16
20160205760 

Adjusting energy of a particle beam


An example particle accelerator includes a coil to provide a magnetic field to a cavity; a particle source to provide a plasma column to the cavity; a voltage source to provide a radio frequency (rf) voltage to the cavity to accelerate particles from the plasma column, where the magnetic field causes particles accelerated from the plasma column to move orbitally within the cavity; an enclosure containing an extraction channel to receive the particles accelerated from the plasma column and to output the received particles from the cavity; and a structure arranged proximate to the extraction channel to change an energy level of the received particles.. .
Mevion Medical Systems, Inc.


07/14/16
20160205759 

Plasma source with an rf coupling system and operating thereof


An rf based, gridless plasma source comprising an rf coupler, an ionization chamber comprising a flow inlet, an upstream manifold, a flow exit, and a reasonably rf transparent gas containment tube that allows rf power to couple to the plasma inside the ionization chamber, and a choke restriction downstream; and a method of using the plasma source comprising a step of tailoring an energy distribution of extracted plasma.. .

07/14/16
20160205758 

System and inhibiting radiative emission of a laser-sustained plasma source


A system for forming a laser-sustained plasma includes a gas containment element, an illumination source configured to generate pump illumination, and a collector element. The gas containment element is configured to contain a volume of a gas mixture.
Kla-tencor Corporation


07/14/16
20160205757 

Dual pulse driven extreme ultraviolet (euv) radiation source


An extreme ultraviolet (euv) radiation source pellet includes at least one metal particle embedded within a heavy noble gas cluster contained within a noble gas shell cluster. The euv radiation source assembly can be activated by a sequential irradiation of at least one first laser pulse and at least one second laser pulse.
International Business Machines Corporation


07/14/16
20160204698 

Dc power source, and dc power source control method


A dc power source to supply dc power to a plasma generator is configured as a simple and small-sized device that forms high voltage for generating a plasma discharge. A step of passing a short-circuit current for extremely short time through the voltage source step-down chopper provided in the dc power source and accumulating energy in a reactor is performed repeatedly more than once, so as to discharge the energy accumulated in the reactor to the output capacitance and raise the output voltage sequentially, thereby boosting the voltage up to the ignition set voltage.
Kyosan Electric Mfg. Co., Ltd.


07/14/16
20160204295 

Grid for plasma ion implant


A grid for minimizing effects of ion divergence in plasma ion implant. The plasma grid is made of a flat plate having a plurality of holes, wherein the holes are arranged in a plurality of rows and a plurality of columns thereby forming beamlets of ions that diverge in one direction.
Intevac, Inc.


07/14/16
20160204281 

Energy storage device with large charge separation


High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach.
The Board Of Trustees Of The Leland Stanford Junior University


07/14/16
20160204007 

System, generating pressure pulses in small volume confined process reactor


A method for modulating a pressure in a plasma processing volume of a chamber during a plasma processing operation is disclosed. The plasma processing volume is defined between a surface of a top electrode, a supporting surface of a substrate support and an outer region defined by a plasma confinement structure that encloses an outer perimeter of the plasma processing volume.
Lam Research Corporation


07/14/16
20160203998 

Etching method


Provided is a method of etching an etching target layer of a workpiece. The method includes forming a self-assemblable block copolymer layer containing a first polymer and a second polymer on an intermediate layer formed on the etching target layer; processing the workpiece to form a first region containing the first polymer and a second region containing the second polymer, from the block copolymer layer; after the processing the workpiece, forming a mask by etching the second region and the intermediate layer just below the second region; after the forming the mask, forming a protective film on the mask by generating plasma of a processing gas containing silicon tetrachloride gas and oxygen gas within a processing container of a plasma processing apparatus that accommodates the workpiece; and after the forming the protective film, etching the etching target layer..
Tokyo Electron Limited


07/14/16
20160203996 

Substrate manufacturing method and substrate manufacturing apparatus


Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber.
Samsung Electronics Co., Ltd.


07/14/16
20160203990 

Internal plasma grid for semiconductor fabrication


The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers.
Lam Research Corporation


07/14/16
20160203978 

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium


A method of manufacturing a semiconductor device, includes: supplying a first precursor and a first nitriding agent onto a substrate having a surface formed thereon with an oxygen-containing film in order to form an initial film on the oxygen-containing film; modifying the initial film into a first nitride film by nitriding the initial film with plasma; and supplying a second precursor and a second nitriding agent onto the substrate in order to form a second nitride film on the first nitride film.. .
Hitachi Kokusai Electric Inc.


07/14/16
20160203971 

Gate stack materials for semiconductor applications for lithographic overlay improvement


Embodiments of the disclosure provide methods and system for manufacturing film layers with minimum lithographic overlay errors on a semiconductor substrate. In one embodiment, a method for forming a film layer on a substrate includes supplying a deposition gas mixture including a silicon containing gas and a reacting gas onto a substrate disposed on a substrate support in a processing chamber, forming a plasma in the presence of the depositing gas mixture in the processing chamber, applying current to a plasma profile modulator disposed in the processing chamber while supplying the depositing gas mixture into the processing chamber, and rotating the substrate while depositing a film layer on the substrate..
Applied Materials, Inc.


07/14/16
20160203961 

Magnetron sputtering apparatus


A magnetron sputtering apparatus includes a vacuum chamber, a cathode target that rotates on the outer side of a backing plate in the vacuum chamber, a magnetic circuit that is spaced from the outer side of the cathode target and defines an opening through which a plasma including a target material removed from the cathode target is ejected, and a yoke around the outer side of the cathode target, the yoke supporting the magnetic circuit.. .
Samsung Display Co., Ltd.


07/14/16
20160203958 

Plasma processing apparatus and plasma processing method


When radio-frequency power is time modulated, a high-voltage side vpp detector detects a first voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to a sample stage in a first period of the time modulation having a first amplitude. A low-voltage side vpp detector detects a second voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to the sample stage in a second period having a second amplitude smaller than the first amplitude.

07/14/16
20160203957 

Data analysis plasma processing apparatus, plasma processing method and plasma processing apparatus


A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process..
Hitachi High-technologies Corporation


07/14/16
20160203956 

Etching source installable in a storage medium processing tool


A plasma etching source installable into at least one of multiple compartments of a sputter deposition tool. The plasma etching source includes a first mounting plate and at least one electrode plate coupled to the first mounting plate.
Seagate Technology Llc


07/14/16
20160203954 

Vapor deposition apparatus, deposition method, and manufacturing organic light-emitting display apparatus by using the same


Provided is a vapor deposition apparatus including: a plasma generator configured to change at least a portion of a first raw material gas into a radical form; a corresponding surface corresponding to the plasma generator; a reaction space between the plasma generator and the corresponding surface; and an insulating member separated from, and surrounding the plasma generator.. .
Samsung Display Co., Ltd.


07/14/16
20160203953 

Contoured showerhead for improved plasma shaping and control


Semiconductor processing chamber showerheads with contoured faceplates, as well as techniques for producing such faceplates, are provided. Data describing deposition rate as a function of gap distance between a reference showerhead faceplate and a reference substrate may be obtained, as well as data describing deposition rate as a function of location on the substrate when the reference showerhead and the reference substrate are in a fixed arrangement with respect to each other.
Novellus Systems, Inc.


07/14/16
20160203951 

Plasma processing apparatus and plasma processing method


A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped rf antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an rf power supply unit for supplying an rf power to the rf antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the rf antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil..
Tokyo Electron Limited


07/14/16
20160203937 

Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond


A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles.
Uchicago Argonne, Llc


07/14/16
20160203260 

Applications of plasma mitochondrial dna analysis


An amount of mitochondrial dna molecules relative to an amount of nuclear dna molecules is determined in a biological sample, and the relative amount is used for various purposes, e.g., screening, detection, prognostication or monitoring of various physiological and pathological conditions. As examples, an amount of mitochondrial dna can be used to estimate a concentration of dna of a tissue type, such as a fetal dna concentration, tumor dna concentration, or a concentration of dna in the biological sample derived from a non-hematopoietic tissue source.
The Chinese University Of Hong Kong


07/14/16
20160202614 

System and method to adaptively pre-compensate for target material push-out to optimize extreme ultraviolet light production


Energy output from a laser-produced plasma (lpp) extreme ultraviolet light (euv) system varies based on how well the laser beam is focused on droplets of target material to generate plasma at a primary focal spot. Maintaining droplets at the primary focal spot during burst firing is difficult because generated plasma from preceding droplets push succeeding droplets out of the primary focal spot.
Asml Netherlands B.v.


07/14/16
20160202274 

Clinical diagnosis of hepatic fibrosis using a novel panel of low abundant human plasma protein biomarkers


The inventors have proposed a novel panel of human plasma protein biomarkers for diagnosing hepatic fibrosis and cirrhosis. Presently there is no reliable non-invasive way of assessing liver fibrosis.
The Chancellor, Masters And Scholars Of The Unversity Of Oxford


07/14/16
20160202257 

Mycoplasma pneumoniae immunological detection method and kit


Infection with mycoplasma pneumoniae can be rapidly and specifically diagnosed by producing an antibody specifically reactive to p30 protein of mycoplasma pneumoniae and performing an immunological assay using the p30 protein as a detection marker. The present invention enables easy and rapid detection of mycoplasma pneumoniae and diagnosis of infection with the bacteria at a hospital or the like without need of specialized instruments or skilled techniques..

07/14/16
20160202187 

Plasma spectrochemical analysis method and plasma spectrochemical analyzer


The present invention provides a plasma spectrochemical analysis method that can be carried out easily and achieves high analytical sensitivity, and includes: a step of concentrating an analyte in a sample in the vicinity of at least one of a pair of electrodes by applying a voltage to the pair of electrodes in the presence of the sample; and a step of generating plasma by applying a voltage to the pair of electrodes and detecting light emitted from the analyte excited by the plasma.. .
Arkray, Inc.


07/14/16
20160202131 

Method and measuring thrust


Embodiments of the invention relate to a thrust stand and a method of measuring thrust. Embodiments of the invention pertain to a method of calibrating a thrust stand.
University Of Florida Research Foundation Inc.


07/14/16
20160201221 

Electronic device grade single crystal diamonds and producing the same


A method utilising microwave plasma chemical vapour deposition (mpcvd) process of producing electronic device grade single crystal diamond comprising of: (a) selecting a diamond seed or substrate having a pre-determined orientation, (b) cleaning and/or etching of non-diamond phases and other induced surface damages from the diamond seed or substrate, whereby this step can be performed one or more times, (c) growing a layer of extremely low crystal defect density diamond surface on the cleaned/etched diamond seed or substrate, whereby this step can be performed one or more times, and (d) growing electronics device grade single crystal diamond on top of the layer of the low crystal defect density diamond surface.. .
Iia Technologies Pte. Ltd.


07/14/16
20160201190 

Functional film manufacturing method and functional film


A functional film manufacturing method, in manufacturing a functional film having an organic layer on a support and an inorganic layer on the organic layer, comprises steps of preparing a coating material containing an organic compound which has a glass transition temperature of 100° c. Or higher and is to be the organic layer, and an organic solvent; coating a support surface with 5 cc/m2 or more of the coating material such that the organic layer thickness becomes 0.05 to 3 μm; forming the organic layer by drying the coating material on the support surface such that the coating material has a viscosity of 20 cp or higher and a surface tension of 34 mn/m or less in a decreasing-rate-of-drying state, and curing the organic compound; and forming the inorganic layer on the organic layer surface by a vapor phase deposition method accompanied by generation of plasma..
Fujifilm Corporation


07/14/16
20160201142 

Using size and number aberrations in plasma dna for detecting cancer


Analysis of tumor-derived circulating cell-free dna opens up new possibilities for performing liquid biopsies for solid tumor assessment or cancer screening. However, many aspects of the biological characteristics of tumor-derived cell-free dna remain unclear.
The Chinese University Of Hong Kong


07/14/16
20160201054 

Method of obtaining antibodies of interest and nucleotides encoding same


The invention is a methodology which makes it possible to select from a very large number of cells, a single cell or cells of interest and obtain specific information from those cells in a rapid and efficient manner. As an example of the methodology, a large number of antibody producing cells such as plasma cells are separated so that these individual antibody producing plasma cells are placed in individual wells.
Single Cell Technology, Inc.


07/14/16
20160200802 

Antibodies that potently neutralize rsv and uses thereof


The invention relates to antibodies, and antigen binding fragments thereof, that neutralize infection of both group a and group b rsv. The invention also relates to antigenic sites to which the antibodies and antigen binding fragments bind, as well as to nucleic acids that encode and immortalized b cells and cultured plasma cells that produce such antibodies and antibody fragments.
Humabs Biomed Sa


07/14/16
20160200704 

Therapeutic inhibitory compounds


Provided herein are heterocyclic derivative compounds and pharmaceutical compositions comprising said compounds that are useful for inhibiting plasma kallikrein. Furthermore, the subject compounds and compositions are useful for the treatment of diseases wherein the inhibition of plasma kallikrein inhibition has been implicated, such as angioedema and the like..
Lifesci Pharmaceuticals, Inc.


07/14/16
20160200618 

Method and adding thermal energy to a glass melt


Disclosed herein are methods and apparatuses for adding thermal energy to a glass melt. Apparatuses for generating a thermal plasma disclosed herein comprise an electrode, a grounded electrode, a dielectric plasma confinement vessel extending between the two electrodes, and a magnetic field generator extending around the dielectric plasma confinement vessel.
Corning Incorporated


07/14/16
20160200583 

Chemical activation of carbon using rf and dc plasma


The disclosure relates to methods and apparatuses for forming activated carbon from feedstock particles comprising a carbon feedstock and at least one activating agent. The feedstock particles are contacted with a plasma plume generated by the combination of rf and dc power sources.
Corning Incorporated


07/14/16
20160200577 

High strength carbon nanotube plasma-treated fibers & methods of making


Carbon nanotubes have excellent mechanical properties such as low density, high stiffness, and exceptional strength making them ideal candidates for reinforcement material in a wide range of high-performance composites. Fibers with increased tensile strengths are produced by employing plasma treatment under various conditions.

07/14/16
20160199940 

Laser processing apparatus


A laser processing apparatus includes a plasma detecting unit for detecting a wavelength of plasma light generated by applying a pulsed laser beam from a laser beam applying unit to a workpiece. The plasma detecting unit includes a bandpass filter for passing only the wavelength of plasma light generated from a first material and a photodetector for detecting the light passed through the bandpass filter.
Disco Corporation


07/14/16
20160199876 

Plasma treatment of thermoset filler particulate


A method for forming an article from a thermoset resin containing particle filler of glass microspheres is provided and includes exposing the particle filler to plasma to increase activation sites on the particle filler; and crosslinking said particle filler to the thermoset set resin via the activation sites. The method provides an exemplary method for treating thermoset fillers to promote bonding to a thermoset matrix.
Continental Structural Plastics, Inc.


07/14/16
20160199806 

Reactor comprising a plasma source and a catalyst comprising a mesoporous support material for the preparation of ethene from methane


The invention relates to a reactor comprising a plasma source and a catalyst comprising a mesoporous support. The invention also relates to a process comprising feeding methane to said reactor in order to obtain one or more of ethene, hydrogen and carbon as well as downstream products derived from ethene thus obtained.
Saudi Basic Industries Corporation


07/14/16
20160199430 

A purified extract isolated from pseudolysimachion rotundum var. subintegrum containing abundant amount of active ingredient, the preparation thereof, and the composition comprising the same as an active ingredient for preventing or treating inflammation, allergy and asthma


A method for preparing purified extract containing more abundant active ingredients such as catalpol derivatives from the extract of pseudolysimachion rotundum var subintegrum than that prepared by the conventional preparation method disclosed in the prior art and the therapeutics or functional health food comprising the purified extract for treating and preventing inflammatory, allergic or asthmatic disease. The purified extract showed more potent anti-inflammatory, anti-allergy and anti-asthma activity than that prepared by the conventional preparation method disclosed in the prior art through various in vivo tests such as inhibition test on the reproduction of eosinophil, the release of immunoglobulin and inflammatory chemokines in plasma and bronchoalveolar fluid as well as the suppression of airway hyperresponsiveness and goblet cell hyperplasia in a ova-sensitized/challenged mouse model..
Korea Research Institute Of Bioscience And Biotechnology


07/14/16
20160199420 

Pharmaceutical composition comprising silkworm as an active ingredient for prevention and treatment of tissue injury by radiation


The present invention relates to a pharmaceutical composition for the prevention and treatment of tissue injury caused by irradiation which comprises silkworm hemolymph as an active ingredient. Particularly, when the silkworm hemolymph of the present invention was administered to an animal model with liver damage induced by irradiation, plasma ast and liver mda were significantly decreased, indicating that the silkworm hemolymph of the invention can be effectively used as a composition for the prevention and treatment of disease caused by the exposure on radiation including tissue injury caused by irradiation, etc..
Korea Atomic Energy Research Institute


07/14/16
20160199417 

Method of treatment utilizing an acellular amnion derived therapeutic composition


Acellular amnion derived therapeutic compositions are described having a number of various compositional embodiments. An acellular amnion derived therapeutic composition has essentially no live or active amniotic cells.
Amnio Technology Llc


07/14/16
20160199358 

Methods of using sustained release aminopyridine compositions


A pharmaceutical composition which comprises a therapeutically effective amount of a aminopyridine dispersed in a release matrix, including, for example, a composition that can be formulated into a stable, sustained-release oral dosage formulation, such as a tablet which provides, upon administration to a patient, a therapeutically effective plasma level of the aminopyridine for a period of at about 12 hours and the use of the composition to treat various neurological diseases, including multiple sclerosis. A method of selecting individuals based on responsiveness to a treatment, including, for example, identifying individuals who responded to treatment with a sustained release fampridine composition..
Acorda Therapeutics, Inc.


07/14/16
20160199352 

Pyrazoloanthrone and derivatives thereof for treatment of cancers expressing missrii


The present invention relates to pyrazoloanthrones or functional derivatives or functional analogues thereof to activate mis receptor-mediated downstream effects in a cell. In particular, the present invention relates to method to prevent and treat cancer that expresses mis receptor type ii (misrii) by administering to a subject at least one pyrazoloanthrone or a functional derivative or a functional analogue thereof.
The General Hospital Corporation


07/14/16
20160199351 

Compositions and methods for inhibiting fungal infections


Compositions and methods for inhibiting fungal growth by administering ar-12 to a host infected with a fungus such as histoplasma capsulatum, aspergillus fumigatus, and trichophyton rubrum, paecilomyces, rhizopus, fusarium, scedosporium, lomentospora, apophysomyces, coccidioides, blastomyces, non-albicans candida, and pneumocytis are provided.. .
Ohio State Innovation Foundation


07/14/16
20160199296 

Nasal formulations of benzodiazepine


The present invention provides pharmaceutical compositions for intranasal delivery of a benzodiazepine. The composition may contain a therapeutically effective amount of a benzodiazepine or a pharmaceutically acceptable salt thereof, and a permeation enhancer.
Cpex Pharmaceuticals, Inc.






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