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Plasma patents



      
           
This page is updated frequently with new Plasma-related patent applications. Subscribe to the Plasma RSS feed to automatically get the update: related Plasma RSS feeds. RSS updates for this page: Plasma RSS RSS


Method for processing gate dielectric layer deposited on germanium-based or group iii-v compound-based substrate

Peking University

Method for processing gate dielectric layer deposited on germanium-based or group iii-v compound-based substrate

Film forming device and film forming method

Brother Kogyo

Film forming device and film forming method

Film forming device and film forming method

Techniques for trench isolation using flowable dielectric materials

Date/App# patent app List of recent Plasma-related patents
06/25/15
20150181724
 Methods of forming segmented vias for printed circuit boards patent thumbnailnew patent Methods of forming segmented vias for printed circuit boards
Novel methods for forming a printed circuit board (pcb) having one or more segmented vias are provided, including improved methods of removing the catalyst after the plating process when forming a segmented via in the pcb. After the electroless plating, excess catalyst on the surface of the plating resist is removed using a catalyst remover, such as an acidic solution that includes at least nitrite or nitrite ion and halogen ion, or the catalyst remover may be an etchant for plating resist, such as alkaline permanganate compound solution or plasma gas comprising at least one of oxygen, nitrogen, argon and tetrafluoromethane, or a mixture of at least two of these gasses.
Sanmina Corporation
06/25/15
20150181688
 Neutron generator patent thumbnailnew patent Neutron generator
A neutron generator includes a sealed envelope providing a low pressure environment for a gas of hydrogen isotope(s). One end of the envelope defines an ion source chamber.
Schlumberger Technology Corporation
06/25/15
20150181686
 High access consumables for a plasma arc cutting system patent thumbnailnew patent High access consumables for a plasma arc cutting system
A torch extender for a plasma arc cutting system is provided. The plasma torch extender includes an elongated substantially dielectric body that defines a first end and a second end and includes a flexible section that is poseable across a plurality of orientations.
Hypertherm, Inc.
06/25/15
20150181685
 Thermal plasma treatment method patent thumbnailnew patent Thermal plasma treatment method
Presented is a method for the surface treatment of objects utilizing thermal plasma, including cascade plasma, and a wrap, such as tape or foil, where the tape or foil attracts the specific part of the plasma which produces a heat necessary to produce the desired treatment. The specific surface treatment may include, but is not limited to, hard-facing, brazing, welding, other types of joining operations, glass bending or forming, glass texturing, coating and surface reconditioning..
Micropyretics Heaters International. Inc.
06/25/15
20150181684
 Extreme edge and skew control in icp plasma reactor patent thumbnailnew patent Extreme edge and skew control in icp plasma reactor
Embodiments of the present disclosure provide apparatus and methods for improving plasma uniformity around edge regions and/or reducing non-symmetry in a plasma processing chamber. One embodiment of the present disclosure provides a plasma tuning assembly having one or more conductive bodies disposed around an edge region of a substrate support in a plasma processing chamber.
Applied Materials, Inc.
06/25/15
20150180346
 Dc power supply device, and control  dc power supply device patent thumbnailnew patent Dc power supply device, and control dc power supply device
A phase of the pulse control signal upon restarting is synchronized with the phase of the pulse control signal upon suspending, thereby suppressing fluctuations of output voltage in each phase of the inverter upon restarting and further suppressing fluctuations of voltage supplied to the load. Upon supplying dc power to a plasma generator, when arc discharge occurs in the plasma generator, supplying of the dc power is suspended to reduce damage on the electrodes and substrate, and further upon extinguishing of the arc discharge, supplying of the dc power is restarted.
Kyosan Electric Mfg. Co., Ltd.
06/25/15
20150180042
 Method patent thumbnailnew patent Method
A method for forming a conducting nanocomposite layer on a substrate, the method comprising depositing a precursor on the substrate by plasma deposition, wherein the precursor comprises (i) a metal or metalloid centre, and (ii) one or more organic ligands, and wherein the conditions of the plasma deposition are tailored such that an organic matrix is retained in the resulting conducting nanocomposite layer.. .
Surface Innovations Limited
06/25/15
20150179918
 Plasma cleaning of superconducting layers patent thumbnailnew patent Plasma cleaning of superconducting layers
In a “window-junction” formation process for josephson junction fabrication, a spacer dielectric is formed over the first superconducting electrode layer, then an opening (the “window” is formed to expose the part of the electrode layer to be used for the junction. In an atomic layer deposition (ald) chamber (or multi-chamber sealed system) equipped with direct or remote plasma capability, the exposed part of the electrode is sputter-etched with ar, h2, or a combination to remove native oxides, etch residues, and other contaminants.
Intermolecular Inc.
06/25/15
20150179915
 Fluorine passivation during deposition of dielectrics for superconducting electronics patent thumbnailnew patent Fluorine passivation during deposition of dielectrics for superconducting electronics
A dielectric for superconducting electronics (e.g., amorphous silicon, silicon oxide, or silicon nitride) is fabricated with reduced loss tangent by fluorine passivation throughout the bulk of the layer. A fluorinant (gas or plasma) is injected into a process chamber, either continuously or as a series of pulses, while the dielectric is being formed by chemical vapor deposition on a substrate.
Intermolecular, Inc.
06/25/15
20150179913
 Fluorine passivation of dielectric for superconducting electronics patent thumbnailnew patent Fluorine passivation of dielectric for superconducting electronics
An amorphous silicon (a-si) dielectric for superconducting electronics is fabricated with reduced loss tangent by fluorine passivation throughout the bulk of the layer. Complete layers or thinner sub-layers of a-si are formed by physical vapor deposition at low temperatures (<350 c, e.g.
Intermolecular, Inc.
06/25/15
20150179867
new patent

Method for manufacturing photoelectric conversion device


In a method for manufacturing a photoelectric conversion device which includes: a substrate including a photoelectric conversion element; and a light guide which includes an insulator having an opening corresponding to the photoelectric conversion element and containing silicon oxide and a member located in the opening and containing silicon nitride, the method includes: forming a first silicon nitride film which forms the member in the opening by a parallel plate type plasma cvd apparatus; and forming a second silicon nitride film which forms the member in the opening and on the first silicon nitride film by a high density plasma cvd apparatus. In the photoelectric conversion device, the first silicon nitride film has a thickness of 55 nm or more..
Canon Kabushiki Kaisha
06/25/15
20150179565
new patent

Semiconductor device with advanced pad structure resistant to plasma damage and forming the same


A connective structure for bonding semiconductor devices and methods for forming the same are provided. The bonding structure includes an alpad structure, i.e., a thick aluminum-containing connective pad, and a substructure beneath the aluminum-containing pad that includes at least a pre-metal layer and a barrier layer.
Taiwan Semiconductor Manufacturing Co., Ltd.
06/25/15
20150179518
new patent

Method of forming contact layer


A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, includes disposing the substrate in a chamber, introducing a ti source gas, a reducing gas and an si source gas into the chamber, and converting the ti source gas, the reducing gas and the si source gas into plasma to form a tisix film on the substrate. A portion of the tisix film in a bottom of the contact hole corresponds to the contact layer..
Tokyo Electron Limited
06/25/15
20150179509
new patent

Plasma treatment of low-k surface to improve barrier deposition


Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead.
Intermolecular, Inc.
06/25/15
20150179501
new patent

Techniques for trench isolation using flowable dielectric materials


Techniques are disclosed for providing trench isolation of semiconductive fins using flowable dielectric materials. In accordance with some embodiments, a flowable dielectric can be deposited over a fin-patterned semiconductive substrate, for example, using a flowable chemical vapor deposition (fcvd) process.
06/25/15
20150179487
new patent

Multipurpose combinatorial vapor phase deposition chamber


In some embodiments, apparatus are provided that provide for flexible processing in high productivity combinatorial (hpc) system. The apparatus allow for interchangeable functionality that includes deposition, plasma treatment, ion beam treatment, in-situ annealing, and in-situ metrology.
Intermolecular, Inc.
06/25/15
20150179466
new patent

Method of manufacturing semiconductor device


Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including o2 gas or n2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including hbr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask..
Tokyo Electron Limited
06/25/15
20150179465
new patent

Ion beam etching system


The disclosed embodiments relate to methods and apparatus for removing material from a substrate. In various implementations, conductive material is removed from a sidewall of a previously etched feature such as a trench, hole or pillar on a semiconductor substrate.
Lam Research Corporation
06/25/15
20150179464
new patent

Dry-etch for selective tungsten removal


Methods of selectively etching tungsten relative to silicon-containing films (e.g. Silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described.
Applied Materials, Inc.
06/25/15
20150179462
new patent

Method of forming ti film


A method of forming a ti film on a substrate disposed in a chamber by introducing a processing gas containing a ticl4 gas as a ti source and a h2 gas as a reducing gas and by generating plasma in the chamber, includes introducing an ar gas as a plasma generation gas into the chamber, converting the ar gas into plasma to generate ar ions, and acting the ar ions on the ti film to promote desorption of cl from the ti film.. .
Tokyo Electron Limited
06/25/15
20150179459
new patent

Multi-plasma nitridation process for a gate dielectric


A gate dielectric can be formed by depositing a first silicon oxide material by a first atomic layer deposition process. The thickness of the first silicon oxide material is selected to correspond to at least 10 deposition cycles of the first atomic layer deposition process.
International Business Machines Corporation
06/25/15
20150179444
new patent

Methods for forming crystalline igzo through power supply mode optimization


Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (igzo). A substrate is positioned relative to at least one target.
Intermolecular, Inc.
06/25/15
20150179439
new patent

Method for processing gate dielectric layer deposited on germanium-based or group iii-v compound-based substrate


The present invention discloses a method for processing a gate dielectric layer deposited on a germanium-based or group iii-v compound-based substrate, belonging to a semiconductor device field. The method comprises the steps of depositing a high-k gate dielectric layer on the germanium-based or group iii-v compound-based substrate, and then performing a plasma process to the high-k gate dielectric layer by using fluorine plasma, wherein during the plasma process, a guiding electric field is applied so that fluorine ions, when being accelerated to a surface of the gate dielectric layer, has an energy of 5-50 ev and the fluorine plasma drifts into the high-k gate dielectric layer, a ratio of a density of the fluorine ions in the high-k gate dielectric layer and a density of oxygen atoms in the high-k gate dielectric layer being 0.01-0.15:1.
Peking University
06/25/15
20150179438
new patent

Gate stacks and ohmic contacts for sic devices


Sic substrates are cleaned and provided to a process chamber. In-situ plasma surface treatments are applied to further clean the surface of the substrate.
Intermolecular, Inc.
06/25/15
20150179436
new patent

Plasma densification of dielectrics for improved dielectric loss tangent


Defects in hydrogenated amorphous silicon are reduced by low-energy ion treatments and optional annealing. The treatments leave strongly-bonded hydrogen and other passivants in place, but increase the mobility of loosely-bonded and interstitially trapped hydrogen that would otherwise form unwanted two-level systems (tls).
Intermolecular Inc.
06/25/15
20150179417
new patent

Plasma monitoring method and plasma monitoring system


A plasma monitoring method using a sensor, the sensor having a substrate; a first electrode, the first electrode being a conductive electrode and formed on the substrate while being isolated from the substrate; an insulating film formed on the first electrode; a contact hole formed in the insulating film and having a depth from a surface of the insulating film to the first electrode; and a second electrode, the second electrode being a conductive electrode, formed on the surface of the insulating film, and faced to plasma during a plasma process, the plasma monitoring method including measuring and monitoring potentials of the first electrode and the second electrode or a potential difference between the first electrode and the second electrode during the plasma process is disclosed. A plasma monitoring system carrying out the plasma monitoring method is also disclosed..
Tohoku University
06/25/15
20150179416
new patent

Adapter plate for polishing and cleaning electrodes


An adapter plate configured to be attachable to a universal platen of a cleaning unit for cleaning upper electrodes from a plasma processing chamber is disclosed, the adapter plate includes a support surface and a mounting surface configured to be fastened to the universal platen of the cleaning unit. The support surface is configured to support an inner electrode or an outer electrode of a showerhead electrode assembly for cleaning upper or lower surfaces thereof.
Lam Research Corporation
06/25/15
20150179412
new patent

Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber


An edge ring configured to surround an outer periphery of a substrate support in a plasma processing chamber wherein plasma is generated and used to process a substrate is disclosed, the substrate support comprising a base plate, a top plate, an elastomer seal assembly between the base plate and the top plate, and an elastomer seal configured to surround the elastomer seal assembly. The edge ring includes an upper inner surface having an edge step directed towards an interior portion of the edge ring and arranged to extend from an outer periphery of a top surface of the top plate to an outer periphery of an upper surface of the base plate, a lower inner surface, an outer surface, a lower surface extending from the lower inner surface to the outer surface, and a top surface extending from the outer surface to the upper inner surface..
Lam Research Corporation
06/25/15
20150179409
new patent

In situ control of ion angular distribution in a processing apparatus


A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.. .
Varian Semiconductor Equipment Associates, Inc.
06/25/15
20150179408
new patent

Substrate processing apparatus and substrate processing method


A substrate processing apparatus and a substrate processing method can perform a plasma process using a microwave and a heat treatment through irradiation of the microwave on a substrate. A substrate processing apparatus 1 includes a processing vessel 2; a microwave introduction device 3 configured to introduce a microwave into the processing vessel 2; a mounting table 4 configured to support a wafer w thereon within the processing vessel 2.
Tokyo Electron Limited
06/25/15
20150179407
new patent

Plasma processing apparatus and plasma processing method


Disclosed is a plasma processing method for generating plasma between an upper electrode connected with a vf power supply and a susceptor disposed to face the upper electrode to perform a plasma processing on a wafer by the plasma. The plasma processing method includes: providing an auxiliary circuit configured to reduce a difference between a reflection minimum frequency of a first route where a high frequency current generated from the vf power supply flows before ignition of the plasma and a reflection minimum frequency of a second route where the high frequency current generated from the vf power supply flows after the ignition of the plasma; igniting the plasma; and maintaining the plasma..
Tokyo Electron Limited
06/25/15
20150179405
new patent

Upper electrode and plasma processing apparatus


In an exemplary embodiment, an upper electrode is disposed in a processing chamber to face a susceptor and provided with a plate-like member and an electrode part. In an exemplary embodiment, the plate-like member is formed with a gas distribution hole that distributes a processing gas used for a plasma processing.
Tokyo Electron Limited
06/25/15
20150179404
new patent

Plasma processing apparatus


In a vacuum arc discharge deposition apparatus, an orifice plate having an opening is arranged in a state of being insulated from a magnetic field duct including at least one curved portion for transporting a deposition particle in the middle of the at least one curved portion, in which a neutral particle and a charged particle are removed by applying a voltage to the orifice plate.. .
Canon Kabushiki Kaisha
06/25/15
20150179140
new patent

Display device


A display device in which an image with a wide color reproduction range and bright red can be displayed is provided. The display device is a display device such as, for example, a liquid crystal display device, a cathode ray tube, an organic electroluminescent display device, a plasma display panel, and a field emission display.
Sharp Kabushiki Kaisha
06/25/15
20150177712
new patent

Computation of radiating particle and wave distributions using a generalized discrete field constructed from representative ray sets


The present system and method for simulating particles and waves is useful for calculations involving nuclear and full spectrum radiation transport, quantum particle transport, plasma transport and charged particle transport. The invention provides a mechanism for creating accurate invariants for embedding in general three-dimensional problems and describes means by which a series of simple single collision interaction finite elements can be extended to formulate a complex multi-collision finite element..
Varian Medical Systems, Inc.
06/25/15
20150177556
new patent

Method for manufacturing board device


According to one embodiment, provided is an array substrate that can effectively prevent an oxide conductive film and a silicon nitride film on the oxide conductive film from peeling without deteriorating reliability. A method for manufacturing the array substrate includes a surface treatment step and a nitride film forming step.
Japan Display Inc.
06/25/15
20150177223
new patent

System and detecting and diagnosing schizophrenia and depression


The invention relates to methods that can detect the abnormal function of the n-methyl-d-aspartate (nmda) receptor, which can ascertain whether an individual has vulnerability for schizophrenia or depression. The invention relates to measuring blood plasma osmolality and the concentration of least one biomarker in conjunction with hypertonic solution infusion as a method for detecting or diagnosing schizophrenia or depression.
Yale University
06/25/15
20150176117
new patent

Interchangeable sputter gun head


In some embodiments, apparatus are provided that provide for flexible processing in both high productivity combinatorial (hpc) and full wafer modes. The apparatus allow for interchangeable functionality that includes deposition with different sizes of targets, plasma treatment, ion beam treatment, and in-situ metrology.
Intermolecular, Inc.
06/25/15
20150176116
new patent

Techniques for diamond nucleation control for thin film processing


Techniques for diamond nucleation control for thin film processing are disclosed. In one particular embodiment, the techniques may be realized as a method for generating a plasma having a plurality of ions; depositing a plurality of diamond nucleation centers on a substrate with the ions in the plasma using an extraction plate having at least one gap, wherein the plasma ions pass through the at least one gap in the extraction plate to generate a focused ion beam to deposit the plurality of diamond nucleation centers; and controlling the growth of a continuous diamond film from the diamond nucleation centers on the substrate by controlling at least one of a temperature around the substrate, a temperature of the plasma, a pressure around the substrate, and a concentration of the ions in the plasma..
Varian Semiconductor Equipment Associates, Inc.
06/25/15
20150176106
new patent

High-density and high-strength wc-based cemented carbide


The synthesis of high performance wc—co cemented carbides which can be efficiently used in the cutting tool industry. Wc with different particle sizes and different grain growth inhibitors were consolidated through spark plasma sintering technique and to form a cemented carbide with best combination of mechanical properties.
King Fahd University Of Petroleum And Minerals
06/25/15
20150176082
new patent

Plasma micrornas for the detection of early colorectal cancer


The present invention relates in general to the field of colorectal cancer detection, and more particularly, to plasma micrornas for the detection of early colorectal cancer. Specifically, the present invention includes methods, kits and biomarkers for diagnosing or detecting colorectal neoplasia in a human subject comprising the steps of: a method for diagnosing or detecting colorectal neoplasia in a human subject comprising the steps of: obtaining one or more biological samples from the subject suspected of suffering from colorectal neoplasia; measuring an overall expression pattern or level of one or more micrornas obtained from the one or more biological samples of the subject; and comparing the overall expression pattern of the one or more micrornas from the biological sample of the subject suspected of suffering from colorectal neoplasia with the overall expression pattern of the one or more micrornas from a biological sample of a normal subject, wherein the normal subject is a healthy subject not suffering from colorectal neoplasia, wherein overexpression of a combination of mir19a and mir19b, or mir19a and mir19b and mir15b is indicative of colorectal cancer..
Centro De Investigación Biomédica En Red De Enfermedades Hepáticas Y Digestivas
06/25/15
20150175967
new patent

Membrane separation devices, systems and methods employing same, and data management systems and methods


A membrane separation device is disclosed along with systems and methods employing the device in blood processing procedures. In one embodiment, a spinning membrane separator is provided in which at least two zones or regions are created in the gap between the spinning membrane and the shell, such that mixing of the fluid between the two regions is inhibited by a radial rib or ridge associated with the spinning membrane that decreases the gap between the spinning membrane and the shell to define two fluid regions, the ridge isolating the fluid in the two regions to minimize mixing between the two.
Fenwal, Inc.
06/25/15
20150175664
new patent

Therapeutic agents for reducing parathyroid hormone levels


Compounds having activity for lowering parathyroid hormone levels are described. In one embodiment, the compounds are comprised of a contiguous sequence of subunits, x1-x2-x3-x4-x5-x6-x7, wherein the x1 subunit comprises a thiol-containing moiety and the distribution of charge on the x2-x7 subunits provides the desired activity.
Kai Pharmaceuticals, Inc.
06/25/15
20150175429
new patent

Method for production of titanium carbide nanoparticles


A method for production of titanium carbide nanoparticles, the method having: a step for supplying titanium powder or titanium oxide powder into a thermal plasma flame; and a step for producing titanium carbide nanoparticles by supplying a reactive gas as a cooling gas and as a source of carbon at the downstream end of the thermal plasma flame. By varying the supplied quantity of the reactive gas, the oxygen concentration of the produced titanium carbide nanoparticles is varied.
Nisshin Engineering Inc.
06/25/15
20150174686
new patent

Method and device for joining conductors to substrates


The present invention relates to a method and a device (1) for joining conductors (10) to substrates (20). The device (1) comprises at least one positioning unit (40) which positions a conductor (10) in a section (33) to be connected on or near the substrate (20).
Maschinenfabrik Reinhausen Gmbh
06/25/15
20150174685
new patent

Integrated multi-task metal working system


A self-contained integrated unit (10), including an engine (11) driving an electric generator (12), air compressor (21) and plasma cutter (30). The engine (11) drives the air compressor (21) for producing compressed air for the plasma cutter (30).
Barracuda Systems, Llc
06/25/15
20150174605
new patent

Film forming device and film forming method


A film forming device includes: a microwave supplying unit configured to supply microwave pulses to generate plasma along a processing surface of a workpiece material; an applying unit configured to apply negative bias voltage pulses to spread a sheath layer along the processing surface of the workpiece material, and a control unit configured to control an applying timing of the negative bias voltage pulses and a supplying timing of the microwave pulses, wherein the control unit is configured to control the applying timing of the negative bias voltage pulses and the supplying timing of the microwave pulses so that a ratio of an applying time period of one negative bias voltage pulse in a supplying time period of one microwave pulse to the supplying time period of one microwave pulse is equal to or greater than 0.9.. .
Brother Kogyo Kabushiki Kaisha
06/25/15
20150174591
new patent

Centrifuge


Centrifuges are useful to, among other things, remove red blood cells from whole blood and retain platelets and other factors in a reduced volume of plasma. Platelet rich plasma (prp) and or platelet poor plasma (ppp) can be obtained rapidly and is ready for immediate injection into the host.
Kensey Nash Corporation
06/25/15
20150174569
new patent

Photocatalytic tio2 coatings on the polymer surfaces activated with visible light, their preparation and use thereof


The invention relates to visible-light active photocatalytic coatings of titanium oxide (iv) on polymer surfaces, characterized in that are applied to a substrate which is the organic polymer material used in medicine, food and pharmaceutical packaging, and the coating is nanocrystalline titanium oxide (iv) or nanocrystalline titanium oxide (iv) surface-modified with organic compound. The invention also includes a method for the preparation of photocatalytic coatings of titanium oxide (iv) according to the invention, comprising the step of activating the surface of a polymeric material with low-temperature plasma technology, and then the synthesis of nanocrystalline titanium oxide (iv) coating and the modification of the surface layer with organic compounds.
Uniwersytet Jagiellonski
06/25/15
20150174550
new patent

Electromagnetic energy-initiated plasma reactor systems and methods


There is provided a method of processing a reaction product generated from a plasma-based reactive process within a material processing zone of a reactor. The method includes supplying a first electromagnetic energy, from a first energy source, to a flowing primary gaseous feed material, such that at least a fraction of the flowing primary gaseous feed material is excited by the supplied first electromagnetic energy into a first plasma within a first plasma zone, and such that at least a fraction of the flowing primary gaseous feed material is converted to a first plasma zone-conditioned product while flowing through the first plasma and the first plasma zone-conditioned product is flowed to a downstream reaction zone, wherein the flowing of the first plasma zone-conditioned product is effected through a fluid passage that effects fluid communication between the first plasma zone and the downstream reaction zone.
Atlantic Hydrogen Inc.
06/25/15
20150174240
new patent

Novel veterinary vaccine


The present invention relates to novel compositions for inducing an immune response in mammals. The composition preferably comprises an antigen and a lipopolysaccharide in an oil-in-water formulation.
06/25/15
20150174233
new patent

Pcv2 mycoplasma hyopneumoniae immunogenic compositions and methods of producing such compositions


Multivalent combination vaccines are provided which include an immunological agent effective for reducing the incidence of or lessening the severity of m. Hyo infection, preferably m.
Boehringer Ingelheim Vetmedica, Inc.
06/25/15
20150174226
new patent

Ompa and asp14 in vaccine compositions and as diagnostic targets


Anaplasma phagocytophilum surface proteins asp14 and ompa and homologous genes from anaplasmatacaea family members are used in compositions suitable for vaccines to treat or prevent infections caused by tick-born bacteria of the anaplasmatacaea family. Asp14 and/or ompa proteins or peptide fragments may be used in combination with other anaplasmatacaea surface proteins to elicit an immune response.
Virginia Commonwealth University
06/18/15
20150173167

Coaxial microwave applicator for plasma production


The disclosure includes a coaxial microwave applicator for plasma production, including a coaxial tube formed by a central core and an outer conductor separated from the central core by an annular space allowing propagation of microwaves. The applicator includes: a cylindrical permanent magnet disposed at the end of the central core; and at least one annular permanent magnet disposed at the end of the outer conductor, all of the magnets disposed at the end of the coaxial tube having the same direction of magnetisation.
Universite Joseph Fourier - Grenoble 1
06/18/15
20150173166

Segmented antenna assembly


A segmented antenna assembly for use in a plasma enhanced chemical vapor deposition (pecvd) apparatus. One embodiment provides an apparatus comprising a chamber body having a top surface and a bottom surface, an antenna comprising a first segment, a second segment electrically coupled to the first segment and extending through an interior volume of the chamber, and a third segment electrically coupled to the second segment, and a dielectric layer disposed around an outer diameter of the second segment..
Applied Materials, Inc.
06/18/15
20150173165

Apparatus and aligning and securing components of a liquid cooled plasma arc torch and improved torch design


A plasma arc torch includes a cathode adaptor body having at least two sealant channels with sealant rings. The torch also includes a cathode body having at least two sealant channels with sealant rings.
Lincoln Global, Inc.
06/18/15
20150173164

Final focus assembly for extreme ultraviolet light source


An extreme ultraviolet light system includes a target material delivery system configured to produce a target material; and a beam delivery system that is configured to receive an amplified light beam emitted from a drive laser system and to direct the amplified light beam toward a target location that receives the target material. The beam delivery system includes a final focus assembly that focuses the amplified light beam at a focal location to enable interaction between the amplified light beam and the target material to cause the target material to be converted into a plasma that emits extreme ultraviolet light.
Asml Netherlands B.v.


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