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This page is updated frequently with new Plasma-related patent applications.




 Transformer and plasma generator patent thumbnailnew patent Transformer and plasma generator
A transformer includes: a first winding; a second winding provided to maintain a first distance to the first winding; and a shell that seals the first winding and the second winding.. .

 Radiation source patent thumbnailnew patent Radiation source
A radiation system to generate a radiation emitting plasma, the radiation system include a fuel emitter to provide a fuel target at a plasma formation region, a first laser arranged to provide a first laser beam at the plasma formation region incident on the fuel target to generate a radiation emitting plasma, an imaging device arranged to obtain a first image of the radiation emitting plasma at the plasma formation region, the first image indicating at least one image property of the radiation emitting plasma, and a controller. The controller is arranged to receive the first image, and to generate at least one instruction based on the at least one image property of the radiation emitting plasma to modify operation of at least one component of the radiation system to reduce a detrimental effect of debris..
Asml Netherlands B.v.


 Method for etching layer to be etched patent thumbnailnew patent Method for etching layer to be etched
Provided is a method for etching an etching target layer of a workpiece. The workpiece has a mask on the etching target layer.
Tokyo Electron Limited


 Method for insulating singulated electronic die patent thumbnailnew patent Method for insulating singulated electronic die
In one embodiment, a method of forming an electronic device includes providing a wafer having plurality of die separated by spaces. The method includes plasma singulating the wafer through the spaces to form singulation lines that expose side surfaces of the plurality of die.
Semiconductor Components Industries, Llc


 Controlling azimuthal uniformity of etch process in plasma processing chamber patent thumbnailnew patent Controlling azimuthal uniformity of etch process in plasma processing chamber
Apparatus, systems, and methods for controlling azimuthal uniformity of an etch process in a plasma processing chamber are provided. In one embodiment, a plasma processing apparatus can include a plasma processing chamber and an rf cage disposed above the plasma processing chamber.
Mattson Technology, Inc.


 Method of dividing wafer patent thumbnailnew patent Method of dividing wafer
A wafer having a device area on one side with a plurality of devices partitioned by division lines is divided into dies. An adhesive tape for protecting devices is attached to the one side of the wafer, the adhesive tape adhering to at least some, optionally all, of the devices.
Disco Corporation


 Diffusion barrier layer formation patent thumbnailnew patent Diffusion barrier layer formation
A method of forming a titanium nitride (tin) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first tin layer with a first nitrogen concentration making a lower portion of the tin diffusion barrier, the first nitrogen concentration of the first tin layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the tin diffusion barrier to prevent fluorine diffusion. The first tin layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second tin layer with a second nitrogen concentration above the first tin layer making an upper portion of the tin diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma..
International Business Machines Corporation


 Substrate processing apparatus patent thumbnailnew patent Substrate processing apparatus
A technique partially adjusts a plasma distribution in a processing region in order to suppress the reduction in in-plane uniformity of a film formed on a substrate. Provided is a substrate processing apparatus including: a substrate support configured to support a substrate; a dividing structure defining a processing region in a space facing the substrate support; a gas supply unit configured to supply a processing gas into the processing region; and a plasma generating unit configured to generate an active species by plasmatizing the processing gas supplied into the processing region by the gas supply unit, and to control an activity of the active species independently for each portion of the processing region when plasmatizing the processing gas..
Hitachi Kokusai Electric Inc.


 Nitrogen oxide abatement in semiconductor fabrication patent thumbnailnew patent Nitrogen oxide abatement in semiconductor fabrication
Embodiments enclosed herein relate to methods and apparatus for reducing nitrogen oxides (nox) produced during processing, such as during semiconductor fabrication processing. A processing system may include an abatement controller and an effluent abatement system, wherein the abatement controller controls the effluent abatement system to reduce nox production, while ensuring abatement of the effluent gases from the processing system.
Applied Materials, Inc.


 Semiconductor manufacturing method patent thumbnailnew patent Semiconductor manufacturing method
A semiconductor manufacturing method in accordance with an embodiment includes feeding a first gas, which contains a component of a first film, to a reaction chamber, and forming a first film over a semiconductor substrate, which is accommodated in the reaction chamber, through plasma cvd. The semiconductor manufacturing method includes feeding a second gas to the reaction chamber after forming the first film, allowing the first gas in the reaction chamber to react on the second gas, and forming a second film, which has a composition different from that of the first film, over the surface of the first film.
Kabushiki Kaisha Toshiba


new patent

Dopant precursors for mono-layer doping


A doping process is described, which includes applying to a substrate a film of dopant material that bonds to the substrate by at least one of hydrogen bonding and covalent bonding; encapsulating the film on the substrate with an encapsulant material, and subjecting the encapsulated film to rapid thermal processing to cause dopant from the dopant material to migrate into the substrate. The film of dopant material is applied from a dopant composition selected from among: (i) dopant compositions comprising an aqueous or glycol solution comprising an inorganic dopant compound; (ii) dopant compositions comprising an arsenic, phosphorus, boron, or antimony compound in which ligands or moieties coordinated to an arsenic, phosphorus, boron, or antimony central atom have coordination bond energies that are lower than those associated with coordinating bonds of said central atom to oxygen or carbon; (iii) dopant compositions comprising a coordinated moiety that selectively and covalently bonds to the substrate; (iv) dopant compositions comprising a compound that undergoes hydrolysis and alcoholysis to covalently bond a dopant functionality to the substrate in said film of dopant material; (v) dopant compositions comprising precursor vapor of an organodopant compound; (vi) dopant compositions interactive with a surface functionality of the substrate to bind the dopant composition to the substrate, wherein the substrate comprises a silicon surface comprising said surface functionality; (vii) dopant compositions interactive with the substrate to covalently bond with a pretreated and/or modified silicon surface thereof; and (viii) dopant compositions interactive with the substrate to bond with the substrate on a silicon surface thereof that has been modified by a treatment comprising at least one of: (a) contacting the silicon surface with a chemical solution; (b) exposing the silicon surface to plasma; and (c) exposing the silicon surface to ultraviolet radiation..
Entegris, Inc.


new patent

Pulsed plasma for film deposition


Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source; wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating..
Applied Materials, Inc.


new patent

Ultrathin atomic layer deposition film accuracy thickness control


Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature..
Lam Research Corporation


new patent

Tuner, microwave plasma source and impedance matching method


A tuner 43 includes a microwave transmission path 51, having a coaxial structure, configured to transmit a supplied microwave to a planar slot antenna 101; slugs 61a and 61b made of a dielectric material and configured to be moved along the microwave transmission path 51; a slug driving unit 70 configured to move the slugs 61a and 61b along the microwave transmission path 51; and a control unit 80 configured to perform impedance matching by controlling positions of the slugs such that they are located at a matching position where a reflection coefficient is small, and configured to control, based on a state of the plasma, a matching track through which the slugs 61a and 61b reach the matching position.. .
Tokyo Electron Limited


new patent

Power generator with frequency tuning for use with plasma loads


A generator and method for tuning the generator are disclosed. The method includes setting the frequency of power applied by the generator to a current best frequency and sensing a characteristic of the power applied by the generator.
Advanced Energy Industries, Inc.


new patent

Elongated capacitively coupled plasma source for high temperature low pressure environments


A modular plasma source assembly for use with a processing chamber is described. The assembly includes an rf hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode.
Applied Materials, Inc.


new patent

Substrate processing apparatus


A substrate processing apparatus includes a substrate mounting table on which a substrate is mounted, a process chamber including the substrate mounting table, a gas supply unit configured to supply a gas into the process chamber, and a plasma generating unit configured to convert the gas supplied into the process chamber from the gas supply unit into a plasma state. The plasma generating unit includes a plasma generating chamber configured to serve as a flow path of the gas supplied into the process chamber from the gas supply unit, and a plasma generating conductor configured by a conductor disposed to surround the plasma generating chamber.
Hitachi Kokusai Electric Inc.


new patent

Ion-ion plasma atomic layer etch process and reactor


A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.. .
Applied Materials, Inc.


new patent

Plasma etching of porous substrates


The disclosed technology generally relates to semiconductor fabrication, and more particularly to plasma etching of dielectric materials having pores. In one aspect, a method for etching a porous material in an environment includes contacting the porous material with an organic gas at a pressure and a temperature.
Katholieke Universiteit Leuven


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new patent

Systems and methods for forming and maintaining a high performance frc


A high performance field reversed configuration (frc) system includes a central confinement vessel, two diametrically opposed reversed-field-theta-pinch formation sections coupled to the vessel, and two divertor chambers coupled to the formation sections. A magnetic system includes quasi-dc coils axially positioned along the frc system components, quasi-dc mirror coils between the confinement chamber and the formation sections, and mirror plugs between the formation sections and the divertors.
Tri Alpha Energy, Inc.


new patent

Radiation source and lithography


A radiation source suitable for providing radiation to a lithographic apparatus generates radiation from a plasma (12) generated from a fuel (31) within an enclosure comprising a gas. The plasma generates primary fuel debris collected as a fuel layer on a debris-receiving surface ((33a), (33b)).
Asml Netherlands B.v.


new patent

Euv lithography system and method with optimized throughput and stability


The present disclosure provides an extreme ultraviolet (euv) lithography process. The process includes loading a wafer to an euv lithography system having an euv source; determining a dose margin according to an exposure dosage and a plasma condition of the euv source; and performing a lithography exposing process to the wafer by euv light from the euv source, using the exposure dosage and the dose margin..
Taiwan Semiconductor Manufacturing Company, Ltd.


new patent

Antibody compositions and immunoassay methods to detect isoforms of anti-müllerian hormone


Disclosed are compositions and methods for detecting and quantifying human anti-mtillerian hormone (amh) in biological samples. In particular, the invention provides novel methods of measuring different forms of amh in a biological sample, such as human plasma the anti-amh antibody compositions disclosed herein enable reproducible measurement and quantitation of amh, including dimeric forms of the amh protein and fragments thereof.
Ansh Labs Llc


new patent

Anti-vla-4 related assays


Methods and apparatus for assaying the level of analytes in a sample, related to vla-4, are disclosed. A method of decreasing the level of an anti-integrin antibody in a subject is described including a) contacting a biological sample from a subject with a detectable capture agent associated with a substrate, wherein the capture agent can bind an anti-integrin antibody in the sample; b) detecting binding of the capture agent with the level of the anti-integrin antibody; and c) treating the subject with plasma exchange until the level of the anti-integrin antibody in the sample reaches a predetermined level..
Biogen Ma Inc.


new patent

Method for biomarker and drug-target discovery for prostate cancer diagnosis and treatment as well as biomarker assays determined therewith


The invention relates to biomarker assays based on protein/peptide biomarkers which show a pronounced differential behaviour between healthy and cancerous sample proteomes e.g. By mass spectrometric measurement and/or antibody-based assays such as an enzyme-linked immunosorbent assay (elisa) determination of the protein biomarkers in serum, plasma or blood itself..
Kantonsspital St. Gallen


new patent

Bi-modal electrode micro cathode arc thruster


A thruster for a micro-satellite is disclosed. The thruster includes a voltage source, an inductor and a resistor.
The George Washington University


new patent

Spark plug and plasma generating device


To provide a spark plug that can reduce power loss and prevent erosion of a tip end part of a central electrode, even in a configuration such that a discharge current and an electromagnetic wave are emitted from a terminal fitting part of the spark plug, and a plasma generation device using the spark plug. The spark plug is provided with a central electrode 2 including a terminal fitting part 2a and an electrode main body 2b electrically connected to the terminal fitting part 2a, an insulator 3 formed with an axial hole 30, which the central electrode 2 is fitted into, a main fitting 4 that surrounds the insulator 3, and a ground electrode 5 that extends from an end surface of the main fitting 4 and is adapted to form a discharge gap that causes a spark discharge between the central electrode 2 and the electrode main body 2b.
Imagineering, Inc.


new patent

Exhaust gas treatment apparatus and exhaust gas treatment internal combustion engine


An exhaust gas treatment apparatus for an internal combustion engine includes: an exhaust gas treatment unit arranged in an exhaust passage of the internal combustion engine, the exhaust passage being configured such that i) exhaust gas flowing along a part of a wall face, which defines the exhaust passage, burbles away from the part of the wall face in an exhaust gas burble zone and ii) as a result of burble of exhaust gas away from the part of the wall face of the exhaust passage in the exhaust gas burble zone, exhaust gas disproportionately flows into the exhaust gas treatment unit or the amount of exhaust gas flowing into the exhaust gas treatment unit reduces. A plasma actuator is also provided arranged at the part of the wall face of the exhaust passage in the exhaust gas burble zone, the plasma actuator being configured to generate air current toward the exhaust gas treatment unit along the part of the wall face in exhaust gas inside the exhaust passage..
Toyota Jidosha Kabushiki Kaisha


new patent

Deposition apparatus and deposition method


According to one embodiment, a deposition apparatus includes a plasma gun, a detector, and a controller. The plasma gun is capable of ejecting a plasma gas, and is capable of forming a film on a work piece exposed to the plasma gas.
Kabushiki Kaisha Toshiba


new patent

Articles coated with fluoro-annealed films


Articles and methods relating to coatings having superior plasma etch-resistance and which can prolong the life of rie components are provided. An article has a vacuum compatible substrate and a protective film overlying at least a portion of the substrate.
Entegris, Inc.


new patent

Magnetic configuration for a magnetron sputter deposition system


A sputter deposition magnetron system for sputtering material comprises at least a first and a second sputter magnetron unit. Each of the magnetron units comprises a magnet configuration and a mounting element for mounting a target so that the first and second magnet configuration contribute to the formation and confinement of a plasma allowing sputtering of the first respectively second target.
Soleras Advanced Coatings Bvba


new patent

Method of manufacturing fiber reinforced barrier coating


A method of manufacturing a fiber reinforced coating. The method includes providing a substrate and plasma spraying a ceramic matrix having fibers encapsulated in a precursor material onto the substrate..
United Technologies Corporation


new patent

Serum/plasma micrornas and uses thereof


This invention provides a combination of micrornas for evaluating the physiological and/or pathological condition of a subject, wherein the combination comprises all detectable micrornas stably existing in the serum/plasma of a subject; and a method for evaluating the physiological and/or pathological condition of a subject, wherein the method includes determining all detectable micrornas stably existing in the serum/plasma of a subject; and a kit for evaluating the physiological and/or pathological condition of a subject, wherein the kit contains the tools for determining all detectable micrornas that stably existing in the serum/plasma of a subject; and a biochip for evaluating the physiological and/or pathological condition of a subject, wherein the biochip contains the components for determining all detectable micrornas stably existing in the serum/plasma of a subject. The aforementioned combination, method, kit and biochip can be used for diagnosis as well as differentially diagnosis of diseases including various tumors; various acute/chronic infectious diseases, e.g.
Jiangsu Mingma Biotech Co., Ltd.


new patent

Method and device for pyrolysis of biomass to produce syngas


A method for pressurized pyrolysis of biomass in a pressurized pyrolysis furnace, including: 1) crushing and screening biomass; collecting biomass having desired particle sizes; and delivering the biomass having desired particle sizes to a pulse-type feeding system; 2) transporting the biomass to a pyrolysis furnace via the pulse-type feeding system; synchronously initiating microwave and a plasma torch, the microwave producing a microwave field in the pyrolysis furnace, working gas of the plasma torch being ionized for the first time to produce plasma jet entering the pyrolysis furnace; and 3) allowing the syngas generated in 2) to continue moving upwards and introducing the syngas out from the top of the pyrolysis furnace; chilling the syngas; introducing the syngas to a cyclone separator to separate residues; and then cooling and purifying the syngas using a cooling device and a purifying device, respectively, to produce clean syngas.. .
Wuhan Kaidi Engineering Technology Research Institute Co., Ltd.


new patent

Method and applying plasma particles to a liquid and use for disinfecting water


The invention provides a method and apparatus for creating plasma particles and applying the plasma particles to a liquid. Liquid feedstock (e.g., water and/or hydrocarbons mixed with biomass) is pumped through a pipeline; the single-phase stream is then transformed into a biphasic liquid-and-gas stream inside a chamber.

new patent

Induction-coupled plasma synthesis of boron nitrade nanotubes


Described herein are processes and apparatus for the large-scale synthesis of boron nitride nanotubes (bnnts) by induction-coupled plasma (icp). A boron-containing feedstock may be heated by icp in the presence of nitrogen gas at an elevated pressure, to form vaporized boron.
Bnnt, Llc


new patent

3d printers having plasma applicators and methods of using same


Systems and methods for printing a three-dimensional object include a 3d printing device and a plasma applicator. In some embodiments the plasma applicator is rotatably connected to the 3d printing device and may apply plasma to a molten layer of 3d printing material immediately after the material is laid, or to a solidified layer immediately before the next layer is laid.
Ep Technologies Llc


new patent

Method and device for laser micromachining


The invention, according to an aspect thereof, relates to a device (60) for laser micromachining a sample made of a given material, which includes a focusing module enabling a nondiffracting beam to be generated from a given incident beam, said nondiffracting beam being focused along a focusing cylinder that is oriented generally along the optical axis of the focusing module, means (601) for transmitting at least one first light pulse (11) suitable for generating, after said focusing module focuses in the sample, a plasma of free charges by multiphotonic absorption in a volume of the sample located on the side surface of said focusing cylinder. .
Centre National De La Recherche Scientifique


new patent

Method and system for enhanced numerical control plasma cutting of parts from a workpiece


A system and method for cutting a workpiece utilizing a plasma cutting tool of fixed cut width into at least two parts having prescribed shapes from a metal plate comprising the steps of: identifying each of the parts by one or more contour lines; cutting a workpiece along one of the identifying contour lines into one of the parts using a tool of fixed cutting width; utilizing this cut contour of fixed width as part of the contour on an adjacent part fully overlapping the cut width. The process is repeated until all the required parts are cut..

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new patent

A skin treatment device for multiphoton ionization-based skin treatment


The invention provides a non-invasive skin treatment device (200) for generating a multiphoton ionization process at a target position (110) in skin tissue (102). The skin treatment device (200) comprises a laser source (105) configured and constructed for generating a laser beam (106), an optical system (109, 112) for focusing the laser beam into the target position below a skin surface (103), and a plasma unit (117) configured and constructed for generating a plasma (100) such that, in use, at least a portion of the plasma penetrates the skin tissue for generating at least one free electron at the target position.
Koninklijke Philips N.v.


new patent

Cold plasma treatment system


A system including a cold plasma treatment system, including a controller configured to produce an electrical signal that generates cold plasma, a cold plasma applicator coupled to the controller, including a roller with at least one cold plasma generating region and at least one massage region, wherein the cold plasma applicator is configured to provide a cold plasma treatment and a massage treatment with the at least one cold plasma generating region and a massage treatment with the at least one massage region.. .
Plasmology4, Inc.


new patent

Cold plasma pressure treatment system


A system including a cold plasma pressure treatment system including a pump configured to produce negative pressure at a first cold plasma treatment region, and a controller configured to control negative pressure at the first cold plasma treatment region with the pump and an electrical signal that forms cold plasma.. .
Plasmology4, Inc.


new patent

Method and detecting hemolysis or for determining a correction factor to correct the influence of hemolysis on a measurement of hematocrit


A method and an apparatus for detecting hemolysis or for determining a correction factor for correcting the influence of hemolysis on the hematocrit measurement, and an extracorporeal blood treatment apparatus with a device for detecting hemolysis. The invention is based on the implementation of two different optical measuring methods for determining hematocrit, wherein the hemolysis or the correction factor is established on the basis of the hematocrit values as detected by the two measuring methods.
Fresenius Medical Care Deutschland Gmbh


new patent

Compositions and methods for enhancing physiological performance and recovery time


Provided are methods for enhancing exercise (e.g., intense, eccentric, elevated temperature, repetitive, aerobic, and high altitude) performance, comprising administering electrokinetically-altered aqueous fluids comprising an ionic aqueous solution of stably configured charge-stabilized oxygen-containing nanostructures predominantly having an average diameter of less than 100 nanometers. In certain aspects, enhancing exercise performance comprises at least one of: reducing plasma inflammatory cytokines (e.g., ifn-alpha, ena-78 and bdnf); ameliorating muscle/tendon damage or enhancing muscle/tendon recovery; reducing biomarkers of exercise-induced muscle injury (e.g., ck, plasma myoglobin); ameliorating exercise induced tendinosis, tendonitis, tenosynovitis, avulsion, and tendon strain associated with chronic repetitive movement or enhancing recovering therefrom; increasing vo2 max; decreasing rpe; reducing blood lactate; preserving muscle contractile function (e.g., maximal force, joint rom); reducing muscle soreness; ameliorating onset of fatigue in an exercising subject.
Revalesio Corporation


Inductively coupled plasma generating device and inductively coupled plasma analysis device


An inductively coupled plasma generating device is configured to include a plasma torch, a high frequency induction coil and a high frequency power source. In addition, a heat transfer member, in which a first terminal is connected to the high frequency induction coil and a second terminal is connected to a cooling block, is disposed in the inductively coupled plasma generating device.
Hitachi High-tech Science Corporation


Organic light emitting diode display device and manufacturing the same


A method of manufacturing an organic light emitting diode (oled) display device includes: providing a substrate including a display area and a non-display area; forming an organic light emitting diode element in the display area; forming a barrier wall around the display area and spaced apart from the organic light emitting diode element; performing a plasma treatment on the substrate on which the organic light emitting diode element is formed; and forming a thin film encapsulation layer for coating the organic light emitting diode element, wherein forming the thin film encapsulation layer includes: forming at least one inorganic layer; and forming at least one organic layer inwardly of the barrier wall.. .
Samsung Display Co., Ltd.


Diffusion barrier layer formation


A method of forming a titanium nitride (tin) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first tin layer with a first nitrogen concentration making a lower portion of the tin diffusion barrier, the first nitrogen concentration of the first tin layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the tin diffusion barrier to prevent fluorine diffusion. The first tin layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second tin layer with a second nitrogen concentration above the first tin layer making an upper portion of the tin diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma..
International Business Machines Corporation


Method for forming semiconductor device structure with fine line pitch and fine end-to-end space


A method for forming a semiconductor device structure is provided. The method includes providing a substrate and forming a bottom layer, a middle layer, and a top layer on the substrate.
Taiwan Semiconductor Manufacturing Co., Ltd


Technique to deposit sidewall passivation for high aspect ratio cylinder etch


Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner.
Lam Research Corporation


Plasma etching method and plasma etching apparatus


There is provided a plasma etching method for etching a base film by a plasma using a photoresist as a mask. The method includes etching the base film by the plasma, under a first processing condition in which a selectivity of the photoresist to the base film is set to a first selectivity, while using as a mask the photoresist formed in a predetermined pattern by exposure and development and a scum remaining in the photoresist, without performing a process of removing the scum; and switching, during the etching of the base film, the first processing condition to a second processing condition in which the selectivity of the photoresist to the base film is set to a second selectivity lower than the first selectivity and further etching the base film by a plasma while using the photoresist as a mask under the second processing condition..
Tokyo Electron Limited


Non-ambipolar electric pressure plasma uniformity control


This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate.
Tokyo Electron Limited


Oxide and manufacturing method thereof


An oxide with high crystallinity or an oxide having a crystal structure with few defects is provided. A method for manufacturing an oxide with a sputtering apparatus includes a target, a backing plate, a magnet unit, a power source, and a substrate holder.
Semiconductor Energy Laboratory Co., Ltd.


Low interface state device and manufacturing the same


A method for manufacturing a low interface state device includes performing a remote plasma surface process on a iii-nitride layer on a substrate; transferring the processed substrate to a deposition cavity via an oxygen-free transferring system; and depositing on the processed substrate in the deposition cavity. The deposition may be low pressure chemical vapor deposition (lpcvd).
Institute Of Microelectronics, Chinese Academy Of Sciences


Continuous-wave laser-sustained plasma illumination source


An optical system for generating broadband light via light-sustained plasma formation includes a chamber, an illumination source, a set of focusing optics, and a set of collection optics. The chamber is configured to contain a buffer material in a first phase and a plasma-forming material in a second phase.
Kla-tencor Corporation


Method and the detection of arc events during the plasma processing of a wafer, surface of substrate


A method for monitoring at least one process parameter of a plasma process being performed on a semiconductor wafer, surface or surface and determine arc events occurring within the plasma tool chamber. The method comprises the steps of detecting the modulated light being generated from the plasma sheath during the plasma process; sampling rf voltage and current signals from the rf transmission line; processing the detected modulated light and the rf signals to produce at least one monitor statistic for the plasma process, and process the monitor signal to determine the occurrence of arcing events during the wafer processing..
Verity Instruments, Inc.


Plasma processing device and operation method


An operation method of a plasma processing device, includes performing a plasma process on a workpiece by supplying first high frequency power of a predetermined output to an electrode and generating plasma; and performing a charge storage process before the plasma process when a time interval from an end of a previous operation of the plasma processing device exceeds a predetermined interval, the charge storage process including supplying, to the electrode, second high frequency power of a lower output than the predetermined output.. .
Tokyo Electron Limited


Plasma source device and methods


This disclosure describes a remote plasma source, a gas input manifold, and related methods of making and using. In some examples, a remote plasma source is provided with a plasma chamber, a gas input manifold, and an output region.
Advanced Energy Industries, Inc.


Remote plasma source for controlling plasma skew


A plasma source is provided including a core element extending from a first end to a second end along a first axis. The plasma source further includes one or more coils disposed around respective one or more first portions of the core element.
Applied Materials, Inc.


Microwave automatic matcher and plasma processing apparatus


A microwave automatic matcher includes a movable body, a driving unit, a matching control unit, a reflection coefficient measuring unit, and a setting unit. The matching control unit consecutively moves the movable body from a start position in one direction by a distance of a difference between the start position and the target position in a matching operation carried out for the plasma process and then variably controls the position of the movable body until the measurement of the reflection coefficient obtained by the reflection coefficient measuring unit falls within the first neighboring range by monitoring the measurement of the reflection coefficient..
Tokyo Electron Limited


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Methods and synchronizing rf pulses in a plasma processing system


A synchronized pulsing arrangement for providing at least two synchronized pulsing rf signals to a plasma processing chamber of a plasma processing system is provided. The arrangement includes a first rf generator for providing a first rf signal.
Lam Research Corporation


Display apparatus and design semiconductor integrated circuit


According to one embodiment, there is provided a display apparatus including a display unit and a display control unit. The display control unit displays on the display unit a schematic diagram in which symbols of schematic elements are associated with respective information about antenna ratios of the schematic elements based on first information in which the antenna ratios related to plasma damage are associated with identifiers of the schematic elements..
Kabushiki Kaisha Toshiba


Method for diagnosis of primary hyperaldosteronism


The present invention relates to methods and kits for the diagnosis of primary hyperaldosteronism (pha). In particular, the present invention relates to the use of a new diagnostic parameter that is composed of the ratio between the ang ii level, in particular the steady state equilibrium ang ii level, and the aldosterone level in a biological sample, such as e.g.
Attoquant Diagnostics Gmbh


Modular device for remote chemical material analysis


A modular device for remote chemical material analysis with a basic function unit which is formed with a transport module, which is partly equipped with a mobile frame construction which is set up with at least a power supply of the laser, a detection system, designed for plasma radiation dispersion according to the wavelength and its record, a control and evaluation block in the form of pc and a control electronic block and partly is connected with a laser module which contains a laser head, which serves as a source of laser pulses, where the essence of the invention is that the laser module is equipped with a laser beam router of optional routing of laser pulses either into a stand-off module when analyzed with a “stand-off libs” method or into a fiber module when analyzed with a “remote libs” method.. .
VysokÉ Uceni TechnickÉ V Brne


Compositions and methods for optimizing the detection of fluorescent signals from biomarkers


Compositions and methods for increasing fluorescent signals generated by biomarkers are described. This serves to increase the accuracy of results when the biomarkers are used for the detection and diagnosis of physiological conditions, such as organ function and plasma volume..
Pharmacophotonics, Inc. D/b/a Fast Biomedical


Sample preparation analysis of platelet proteins


The present invention provides a novel method of in vitro sample preparation for the analysis of proteins. In a first aspect, the present invention is a method comprising the separation and individual treatment of blood platelets and platelet-poor plasma obtained from a platelet-rich plasma sample.
Randox Laboratories Ltd


Piston and manufacturing piston


This piston includes a piston main body made of aluminum or an aluminum alloy, used in an internal combustion and a modified layer formed on a surface of a strength reinforced portion of the piston main body, having a surface made of aluminum oxide by plasma oxidation, to which compressive residual stress is applied.. .
Advanced Laser Technology Research Center Co. Ltd.


Pe-cvd apparatus and method


A plasma-enhanced chemical vapour deposition (pe-cvd) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel.
Spts Technologies Limited


Substrate holder and substrate processing apparatus


A substrate holder holds a stack of substrates to be plasma-processed, and includes a ring-shaped part to be placed between adjacent substrates each of which includes a process surface to be plasma-processed and a non-process surface opposite from the process surface. The ring-shaped part includes a facing surface that faces the process surface of one of the adjacent substrates, and a protrusion formed along the outer periphery of the facing surface..
Tokyo Electron Limited


Antibodies directed against icos and uses thereof


The present invention provides antibodies directed against icos or a derivative thereof which neutralize icos engagement on treg by inhibiting the fixation between icos and icos-l and abrogate proliferation of treg induced by plasmacytoid dendritic cells. The present invention further provides antibodies directed against icos or a derivative thereof which induce il-10 and ifnγ production, induce cd4+ t cells proliferation, reduce tconv proliferation, and increase the immunosuppressive function of treg..
Centre Leon Berard


Composition for preventing mycoplasma spp. infection


The present invention provides proteins that are suitable to be used as the active ingredient in subunit vaccine against mycoplasma spp. The present invention also provides a subunit vaccine made therefrom.
Agricultural Technology Research Institute


Container treatment system


A system includes a cold plasma applicator configured to couple directly to a container, wherein the cold plasma applicator is configured to generate a cold plasma within the container. A method includes operating a cold plasma applicator to generate a cold plasma to treat contents within a container, wherein the cold plasma applicator is configured to directly couple to the container, or the cold plasma applicator comprises a varying geometry application surface having a plurality of protruding electrode portions spaced apart from one another to define a plurality of intermediate recessed portions, or a combination thereof..
Plasmology4, Inc.


Plasma treatment of flexographic printing surface


A method of plasma treating a flexographic printing plate and a method of using a plasma-treated flexographic printing plate to transfer a liquid to a printable substrate are disclosed. A method of flexographic printing comprises: transferring the liquid from an anilox roll to a printing surface of the plasma-treated flexographic printing plate and transferring the liquid from the printing surface of the plasma-treated flexographic printing plate to a surface of the substrate.
3m Innovative Properties Company


Method for delivering safety and disposal instructions to personnel who are removing coatings with laser processing


A laser coating removal system includes a detector and a controller. The detector detects wavelengths associated with radiative emission of elements in laser-induced plasma generated by the laser coating removal.
American Laser Enterprises, Llc


Treated mixed matrix polymeric membranes


Disclosed are treated mixed matrix polymeric membranes comprising a plurality of metal-organic frameworks (mofs) and a polymeric matrix, wherein the plurality of mofs are attached to the polymeric matrix through covalent or hydrogen bonds or van der waals interaction. The membranes can be treated with plasma, electromagnetic radiation, or thermal energy or any combination thereof.
Sabic Global Technologies B.v.


Ultraviolet and plasma-treated polymeric membranes


Disclosed are polymeric blend membranes and methods for treating and using the membranes. The membranes include a blend of at least a polymer of intrinsic microporosity (pim) and a second polymer, wherein the polymeric membrane has been treated with ultraviolet (uv) radiation and plasma..
Sabic Global Technologies B.v.


Plasma-treated polymeric membranes


Disclosed are polymeric blend membranes, and methods for their use, they have been plasma-treated. The polymeric membranes include a polymeric blend of polymer of intrinsic microporosity (pim) and a second polymer..
Sabic Global Technologies B.v.


Recirculating fluid filtration system


A fluid filtration system comprising a cross-flow filter is arranged to permit a first pump to recirculate part of the retentate of the filter to the inlet of the cross-flow filter and a second pump to return part of the permeate to the inlet of the cross-flow filter. A third pump is configured supply source fluid to the inlet of the filter.
Deka Products Limited Partnership


Plasma treatment system for rigid containers


There is herein described a plasma treatment system and a method for sterilizing. More particularly, there is described a plasma treatment system for rigid containers and a method of using the plasma treatment system for sterilizing the rigid containers.
Anacail Limited


Systems and delivering fluids to a patient of varying concentration


A method for injection of an imaging contrast into a patient, includes: a. In a first phase, injecting a fluid having a first concentration of contrast agent for a first period of time; and b.
Bayer Pharma Ag


Pharmaceutical composition for preventing or treating liver diseases, containing plasmalogen precursor, plasmalogen or plasmalogen analog as effective component


The present invention relates to a pharmaceutical composition for preventing or treating liver diseases, containing a plasmalogen precursor, plasmalogen, or a plasmalogen analog as an effective component. More specifically, a plasmalogen precursor, or plasmalogen or a plasmalogen analog produced by metabolizing the plasmalogen precursor, can prevent or treat liver diseases such as hepatic steatosis, hepatitis, or liver cirrhosis, etc.
University Of Ulsan Foundation For Industry Cooper Ation


Process for the treatment of fruits and vegetables


The present invention is directed to a process for the treatment of fruits and/or vegetables, and especially for the coating of pomes, such as apples and pears. Particularly, fruits and/or vegetables are treated with a physical treatment and particularly a cold plasma treatment, optionally followed by another treatment.

Plasma generation electrode module, plasma generation electrode assembly, and generating plasma using the same


A plasma generation electrode module includes: a plasma generation electrode module includes: first and second electrodes formed to be spaced apart from one another; and a dielectric disposed between the first and second electrodes to insulate the first and second electrodes, wherein the first electrode has a shaft shape, a first cylindrical dielectric is formed to be in concentric with the first electrode so as to be in contact with an outer circumference of the first electrode and cover the first electrode, and the second electrode is formed to be in concentric with the first dielectric so as to be in contact with an outer circumference of the first dielectric and cover the first dielectric, wherein a plurality of through holes are disposed on the second electrode, wherein the first and second electrodes are formed to be woven.. .
Agency For Defense Development


Pattern fortification for hdd bit patterned media pattern transfer


A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure.
Applied Materials, Inc.


Semiconductor device and manufacturing same


To provide a magnetoresistance effect element configuring mram by dry etching and thereby processing a stacked film including magnetic layers, in order to prevent a leakage current from flowing between the magnetic layers, that is, magnetic free layer and magnetic pinned layer which configure a magnetic tunnel junction (mtj) via a metal deposit that has attached to the side wall of the mtj. After formation of the magnetoresistance effect element by dry etching, plasma treatment is performed in a gas atmosphere containing carbon and oxygen to remove a metal deposit attached to the magnetoresistance effect element.
Renesas Electronics Corporation


Method for manufacturing semiconductor device


A method for manufacturing a semiconductor device includes the steps of mounting a si interposer over a printed wiring substrate, plasma-cleaning an upper surface of the si interposer, disposing an ncf over the upper surface of the si interposer, and mounting a semiconductor chip over the upper surface of the si interposer through the ncf. Also, the method includes the step of electrically coupling each of plural electrodes of a second substrate and each of plural electrode pads of the semiconductor chip with each other through plural bump electrodes by reflow, and the surface of the si interposer is plasma-cleaned before attaching the ncf to the si interposer..
Renesas Electronics Corporation


Method for increasing adhesion of copper to polymeric surfaces


Disclosed herein are methods and systems for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer.
Tel Nexx, Inc.


Etching method


Disclosed herein is an etching method for a workpiece. The etching method includes the steps of dissociating an inert gas to form a plasma in an evacuated condition of a chamber to thereby remove moisture present on the workpiece set in the chamber, and next dissociating a fluorine-based stable gas instead of the inert gas to form a plasma in the chamber after removing the moisture to thereby dry-etch the workpiece..
Disco Corporation


Technique to deposit sidewall passivation for high aspect ratio cylinder etch


Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner.
Lam Research Corporation


Methods for etch of sin films


A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions.
Applied Materials, Inc.


Technique to deposit sidewall passivation for high aspect ratio cylinder etch


Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner.
Lam Research Corporation


Silicon selective removal


A method of etching exposed silicon on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor.
Applied Materials, Inc.


Method and apparatus to minimize seam effect during teos oxide film deposition


A method of minimizing a seam effect of a deposited teos oxide film during a trench filling process performed on a semiconductor substrate in a semiconductor substrate plasma processing apparatus comprises supporting a semiconductor substrate on a pedestal in a vacuum chamber thereof. Process gas including teos, an oxidant, and argon is flowed through a face plate of a showerhead assembly into a processing region of the vacuum chamber.
Lam Research Corporation


Laser enabled imaging mass cytometry


The invention relates to methods and devices for analysis of samples using laser ablation inductively coupled plasma mass spectrometry (la-icp-ms). The invention provides methods and devices in which individual ablation plumes are distinctively captured and transferred to the icp, followed by analysis by mass cytometry..
Fluidigm Canada Inc.


Silicon etch process with tunable selectivity to sio2 and other materials


A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including nh3 and nf3 to form a stream of plasma products, controlling a flow of un-activated nh3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated nh3 until the pressure is within a tolerance of a desired pressure. An etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated nh3..
Applied Materials, Inc.


Multi-grid assembly in plasma source improving same


A plasma processing system with a multi-grid arrangement is provided. The system includes a plurality of grids, which includes at least a beam grid, a ground grid and a suppressor grid.

Impedance matching circuit for operation with a kilohertz rf generator and a megahertz rf generator to control plasma processes


An impedance matching circuit (imc) is described. The impedance matching circuit includes a first circuit.
Lam Research Corporation


Plasma processing apparatus


A baffle structure of a plasma processing apparatus includes a first member and at least one second member. The first member includes a cylindrical portion extending between a placement table and a processing container.
Tokyo Electron Limited






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