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Plasma

Plasma-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Microwave plasma treatment apparatus
February 15, 2018 - N°20180049304

[solution] in a micro plasma treatment apparatus including a dielectric substrate, a microwave introducing section, a microstrip line, an earth conductor, a gas inlet, a plasma generating section, and a nozzle for blowing out a plasma, the gas inlet is provided at the earth conductor or the microstrip line, and the gas inlet is provided with a diameter preferably smaller ...
Plasma torch with structure capable of performing reversed polarity/straight polarity operation
Korea Hydro & Nuclear Power Co., Ltd.
February 15, 2018 - N°20180049303

Disclosed is a plasma torch with a structure capable of performing reversed polarity/straight polarity operation, wherein the plasma torch is coupled to a melter and melts a waste material such as radioactive waste or industrial waste by generating and sustaining a plasma arc between electrodes, the plasma torch including: a rear electrode provided inside a torch pipe and electrically ...
Capacitor-battery hybrid formed by plasma powder electrode coating
Gm Global Technology Operations Llc
February 15, 2018 - N°20180048040

Atmospheric plasma spray devices and methods are used in the making of the electrodes for both a lithium-ion battery and a lithium-ion utilizing capacitor structure, which are to be placed in a common container and infiltrated with a common lithium-ion transporting, liquid electrolyte. The lithium-ion-utilizing capacitor and lithium-ion cell battery are combined such that the respective electrodes may be electrically ...
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Separation method, light-emitting device, module, and electronic device
Semiconductor Energy Laboratory Co., Ltd.
February 15, 2018 - N°20180047902

A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming ...
Iii-nitride led with tunnel junction
Soraa, Inc.
February 15, 2018 - N°20180047868

A method of forming a hi-nitride based device comprising: (a) depositing first layers by mocvd on a substrate, wherein the first layers comprise device layers of iii-nitride material; and (b) depositing epitaxial second layers over the first layers by at least one of sputtering, plasma deposition, pulsed laser deposition, or liquid phase epitaxy, wherein the second layers comprise iii-nitride material ...
Semiconductor device and manufacturing method thereof
Asm Ip Holding B.v.
February 15, 2018 - N°20180047749

Disclosed are a semiconductor device and a manufacturing method thereof. According to the semiconductor device and the manufacturing method thereof according to exemplary embodiments of the present invention, after the dopant source layer is uniformly deposited on a channel layer of the device with the 3-demensional vertical structure by the plasma-enhanced atomic layer deposition (peald) method, the deposited dopant source ...
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Plasma Patent Applications
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Interconnection structure and methods of fabrication the same
Taiwan Semiconductor Manufacturing Company, Ltd.
February 15, 2018 - N°20180047672

A method includes receiving a substrate having a substrate feature; forming a first material layer over the substrate and in physical contact with the substrate feature; forming an etch mask over the first material layer; and applying a dynamic-angle (da) plasma etching process to the first material layer through the etch mask to form a first material feature. Plasma flux ...
Diffusion barrier layer formation
International Business Machines Corporation
February 15, 2018 - N°20180047622

A method of forming a titanium nitride (tin) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first tin layer with a first nitrogen concentration making a lower portion of the tin diffusion barrier, the first nitrogen concentration of the first tin ...
Plasma processing device and plasma processing method using same
February 15, 2018 - N°20180047595

The plasma processing apparatus includes a mechanism (125, 126, 131, 132) for generating inductively coupled plasma, a perforated plate 116 for partitioning the vacuum processing chamber into upper and lower areas 106-1 and 106-2 and shielding ions, and a switch 133 for changing over between the upper and lower areas 106-1 and 106-2 as a plasma generation area.
Method of processing target object
Tokyo Electron Limited
February 15, 2018 - N°20180047578

A method of processing a target object is provided. The target object has an etching target layer, an organic film on the etching target layer and a mask on the organic film. The organic film includes a first layer and a second layer, the mask is provided on the first layer, the first layer is provided on the second layer, ...
Plasma processing method and plasma processing device
February 15, 2018 - N°20180047573

A plasma processing apparatus performs plasma generation and control of energy of ion bombardment on the substrate independently, generates plasma by continuous discharge or pulse discharge, and switches at least two bias powers having different frequencies, and alternately and repeatedly applies the at least two bias powers having different frequencies to a sample stage while the plasma is being generated.
Slip ring, support mechanism, and plasma processing apparatus
Tokyo Electron Limited
February 15, 2018 - N°20180047547

Disclosed is a slip ring including: a conductive rotor that is rotatable around a rotation axis; a conductive stator provided coaxially with the rotor; a conductive sphere disposed between the rotor and the stator to form an electric path between the rotor and the stator; and a conductive coil spring provided between the sphere and one of the rotor and ...
Systems and methods for rf power ratio switching for iterative transitioning between etch and deposition ...
Lam Research Corporation
February 15, 2018 - N°20180047543

A system is provided and includes a first linear motor, a first separator support assembly, and a controller. The first linear motor includes a shaft that is linearly driven based on a current supplied to the first linear motor. The first separator support assembly is configured to connect to the shaft of the first linear motor and to a rod ...
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Plasma Patent Applications
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Film forming apparatus and gas injection member used therefor
Tokyo Electron Limited
February 15, 2018 - N°20180047541

A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas ...
Heating plasma for fusion power using electromagnetic waves
Lockheed Martin Corporation
February 15, 2018 - N°20180047463

In one embodiment, a fusion reactor includes two internal magnetic coils suspended within an enclosure, a center magnetic coil coaxial with the two internal magnetic coils and located proximate to a midpoint of the enclosure, a plurality of encapsulating magnetic coils coaxial with the internal magnetic coils, and two mirror magnetic coil coaxial with the internal magnetic coils. The fusion ...
Encapsulating magnetic fields for plasma confinement
Lockheed Martin Corporation
February 15, 2018 - N°20180047462

In one embodiment, a fusion reactor includes an enclosure, an open-field magnetic system comprising one or more internal magnetic coils suspended within the enclosure, and one or more encapsulating magnetic coils coaxial with the one or more internal magnetic coils of the open-field magnetic system. The one or more encapsulating magnetic coils form a magnetosphere around the open-field magnetic system. ...
System and method for small, clean, steady-state fusion reactors
The Trustees Of Princeton University
February 15, 2018 - N°20180047461

According to some embodiments, a system for widening and densifying a scrape-off layer (sol) in a field reversed configuration (frc) fusion reactor is disclosed. The system includes a gas box at one end of the reactor including a gas inlet system and walls of suitable heat bearing materials. The system further includes an exit orifice adjoining the gas box, wherein ...
Compression rate reduction process by adding cold material at the cylinder head of engines converted ...
February 15, 2018 - N°20180045111

The proposed process consists of adding cold material to the cylinder head or engine head through metallization or electric arc or plasma spraying to form a combustion chamber therein.
Method for improving adhesion between a reinforcement element and an elastomer matrix material
Continental Reifen Deutschland Gmbh
February 15, 2018 - N°20180044846

The invention relates to a method for improving adhesion between a reinforcement element that comprises textile fibers or textile filaments and an elastomer matrix material, in particular uncured rubber, the reinforcement element being provided with a sol-gel coating and the sol-gel coated reinforcement element being exposed to the action of a plasma, in particular a low-pressure plasma.
Container plasma treatment process comprising a thermal imaging phase
Sidel Participations
February 15, 2018 - N°20180044793

Disclosed is a process for treating a container with plasma, for depositing a barrier layer on an internal face of the container. This process includes: after the plasma has been extinguished, obtaining a thermal image of the container; comparing the thermal image of the container with a reference thermal image stored in memory; and, if the thermal image of the ...
Minimizing radical recombination using ald silicon oxide surface coating with intermittent restoration plasma
Lam Research Corporation
February 15, 2018 - N°20180044791

Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on ...
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