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Plasma

Plasma-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Internally energized electrode of a plasma arc torch
Hypertherm, Inc.
June 22, 2017 - N°20170181261

A coolant tube for a plasma arc torch is provided. The coolant tube includes an elongated coolant tube body including a distal portion configured to engage an electrode and a proximal portion configured to engage a body of the plasma arc torch. The coolant tube also includes a first electrically conductive element coupled to the distal portion of the elongated ...
Methods and apparatus for pulsed-dc dielectric barrier discharge plasma actuator and circuit
Creare Llc
June 22, 2017 - N°20170181260

A plasma generating device intended to induce a flow in a fluid via plasma generation includes a dielectric separating two electrodes and a power supply. The first electrode is exposed to a fluid flow while the second electrode is positioned under the dielectric. The power supply is electrically coupled to a switch and the first and second electrodes. When the ...
Euv lpp source with improved dose control by tracking dose over specified window
Asml Netherlands B.v.
June 22, 2017 - N°20170181258

A method and apparatus for controlling a dose of extreme ultraviolet (euv) radiation generated by a laser produced plasma (lpp) euv light source. In one embodiment, a running total of the euv energy generated over a predetermined number of laser pulses is measured; once that number of pulses is exceeded, the energy from the pulse immediately preceding the most recent ...
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Low temperature encapsulation for magnetic tunnel junction
Tokyo Electron Limited
June 22, 2017 - N°20170179194

A method of making a magnetic random access memory device comprises forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a reference layer positioned in contact with the electrode, a tunnel barrier layer arranged on the reference layer, and a free layer arranged on the tunnel barrier layer; and depositing an encapsulating layer on and along ...
Imaging device manufacturing method
Canon Kabushiki Kaisha
June 22, 2017 - N°20170179191

There is provided an imaging device manufacturing method contributing to improved reliability and yield. The method includes forming a first insulating film on a polysilicon film and then removing a portion of the first insulating film formed on a second main surface and a portion of the first insulating film formed on a side surface of the substrate to expose ...
Method of manufacturing thin-film transistor, thin-film transistor substrate, and flat panel display apparatus
Samsung Display Co., Ltd.
June 22, 2017 - N°20170179164

A method of manufacturing a thin-film transistor includes forming an oxide semiconductor on a substrate, stacking an insulating layer and a metal layer on the substrate to cover the oxide semiconductor, forming a photosensitive pattern on the metal layer, forming a gate electrode by etching the metal layer using the photosensitive pattern as a mask, where a part of the ...
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Plasma Patent Applications
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  • 2061+ full patent PDF documents of Plasma-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Thermocompression bonding using plasma gas
Varian Semiconductor Equipment Associates, Inc.
June 22, 2017 - N°20170179070

Described herein are devices and techniques for thermocompression bonding. A device can include a housing, a platform, and a plasma jet. The housing can define a chamber. The platform can be located within the chamber and can be proximate a thermocompression chip bonder. The plasma jet can be located proximate the platform. The plasma jet can be movable about the ...
Low damage low-k dielectric etch
Texas Instruments Incorporated
June 22, 2017 - N°20170178955

A method of forming an interconnect structure for an integrated circuit. A dielectric stack is formed on the substrate including an etch-stop layer, a low-k or ulk dielectric layer, and a hard mask layer. The low-k or ulk dielectric is etched using at least two etching processes wherein each etching process is followed by an etch repair process where the ...
Interlevel airgap dielectric
International Business Machines Corporation
June 22, 2017 - N°20170178948

A method of forming a semiconductor device includes: forming a lower trace in a lower dielectric layer; reducing a height of the lower trace a distance equal to gap height (g) to form an initial void region; filling the initial void region with an amorphous carbon layer; forming an upper dielectric layer above the amorphous carbon layer; covering the amorphous ...
Methods of treating nitride films
Applied Materials, Inc.
June 22, 2017 - N°20170178927

Methods for reducing oxygen content in an oxidized annealed metal nitride film comprising exposing the film to a plasma.
Plasma processing method
Panasonic Intellectual Property Management Co., Lt D.
June 22, 2017 - N°20170178925

To provide a plasma processing device, a plasma processing method and a method of manufacturing electronic devices capable of performing high-speed processing as well as using the plasma stably. In an inductively-coupled plasma, torch unit, a coil, a first ceramic block and a second ceramic block are arranged in parallel, and a long chamber has an annular shape. Plasma generated ...
Oxide etch selectivity enhancement
Applied Materials, Inc.
June 22, 2017 - N°20170178924

A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor in combination with an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water ...
Iodine-containing compounds for etching semiconductor structures
Air Liquide Electronics U.s. Lp
June 22, 2017 - N°20170178923

A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of an iodine-containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the iodine-containing etching compound has the formula cahxfyiz, wherein a=1-3, x=0-6, y=1-7, z=1-2, x+y+z=4 when a=1, x+y+z=4 or 6 ...
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Plasma Patent Applications
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inventor
  • 2061+ full patent PDF documents of Plasma-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Etching method
Tokyo Electron Limited
June 22, 2017 - N°20170178921

An etching method performed by an etching apparatus includes a first process of causing a first high-frequency power supply to output a first high-frequency power with a first frequency and causing a second high-frequency power supply to output a second high-frequency power with a second frequency lower than the first frequency in a cryogenic environment where the temperature of a ...
Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch
Lam Research Corporation
June 22, 2017 - N°20170178920

Methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate are provided. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective film on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching ...
Methods for selective etching of a silicon material using hf gas without nitrogen etchants
Applied Materials, Inc.
June 22, 2017 - N°20170178915

The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including hf gas without nitrogen etchants to remove a silicon material disposed on a substrate.
Capacitive coupled plasma source for sputtering and resputtering
Ionquest Llc
June 22, 2017 - N°20170178912

An ionized physical vapor deposition (i-pvd) source includes an electrically and magnetically enhanced radio frequency (rf) diode, which has magnetic field lines directed substantially perpendicular to a cathode that terminate on an electrode positioned between an anode around the cathode. The anode forms a gap and the electrode is positioned behind the gap. An rf power supply connected to the ...
Method of improving adhesion
Spts Technologies Limited
June 22, 2017 - N°20170178901

A method is for improving adhesion between a semiconductor substrate and a dielectric layer. The method includes depositing a silicon dioxide adhesion layer onto the semiconductor substrate by a first plasma enhanced chemical vapor deposition (pecvd) process, and depositing the dielectric layer onto the adhesion layer by a second pecvd process. The first pecvd process is performed in a gaseous ...
Techniques for controlling ion/neutral ratio of a plasma source
Varian Semiconductor Equipment Associates, Inc.
June 22, 2017 - N°20170178900

Approaches herein increase a ratio of reactive ions to a neutral species in a plasma processing apparatus. Exemplary approaches include providing a processing apparatus having a plasma source chamber including a first gas inlet, and a deposition chamber coupled to the plasma source chamber, wherein the deposition chamber includes a second gas inlet for delivering a point of use (pou) ...
Method for cleaning substrate
Taiwan Semiconductor Manufacturing Co., Ltd.
June 22, 2017 - N°20170178895

A method for cleaning a substrate is provided. The method includes providing a substrate. Metal compound residues are formed over the substrate. The method includes exposing the substrate to an organic plasma to volatilize the metal compound residues. The organic plasma is generated from a gas. The gas includes an organic gas, and the organic gas is made of a ...
Cleaning method
Applied Materials, Inc.
June 22, 2017 - N°20170178894

Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use ...
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