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Plasma patents



      

This page is updated frequently with new Plasma-related patent applications.




Date/App# patent app List of recent Plasma-related patents
04/07/16
20160100476 
 Method and  generating high-power terahertz wave patent thumbnailMethod and generating high-power terahertz wave
A method and apparatus for generating terahertz waves using laser plasma are disclosed herein. The method of generating high-power terahertz waves includes generating plasma by focusing a laser beam on a gas within a vacuum chamber, radiating laser beams into the magnetized plasma from opposite directions so that the laser beams collide with each other at a preset location, and generating terahertz waves of a predetermined frequency through the oscillation of the plasma generated by the collision of the laser beams..
Unist Academy-industry Research Corporation


04/07/16
20160099162 
 Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber patent thumbnailSingle ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber
Embodiments of the invention provide a single ring comprising a circular ring-shaped body with an inner surface, closest in proximity to a centerline of the body, and an outer surface opposite the inner surface. The body has a bottom surface with a slot formed therein and a top surface with an outer end, adjacent to the outer surface, and an inner end adjacent to a slope extending, towards the centerline, down to a step on the inner surface.
Applied Materials, Inc.


04/07/16
20160099161 
 Plasma etching method and plasma etching apparatus patent thumbnailPlasma etching method and plasma etching apparatus
A plasma etching method includes a holding step of holding a substrate, a processing gas supplying step of supplying processing gas to a space between the holding unit and an electrode plate facing the holding unit within the processing chamber, and a high frequency power supplying step of converting the processing gas supplied to the space from the plurality of supply parts into plasma by supplying a high frequency power from a high frequency power supply to at least one of the holding unit and the electrode plate. The processing gas supplying step includes controlling an adjustment unit configured to adjust a supply condition for supplying processing gas with respect to each of the plurality of supply parts such that the supply condition that is adjusted varies between a first position and a second position..
Tokyo Electron Limited


04/07/16
20160099160 
 Method for collapse-free drying of high aspect ratio structures patent thumbnailMethod for collapse-free drying of high aspect ratio structures
A method for drying a substrate including a plurality of high aspect ratio (har) structures includes, after at least one of (i) wet etching, and (ii) wet cleaning, and (iii) wet rinsing the substrate using at least one of (a) wet etching solution, and (b) wet cleaning solution, and (c) wet rinsing solution, respectively, and without drying the substrate: depositing, between the plurality of har structures, a solution that includes a polymer component, a nanoparticle component, and a solvent; wherein as the solvent evaporates, a sacrificial bracing material precipitates out of solution and at least partially fills the plurality of har structures, the sacrificial bracing material including (i) polymer material from the polymer component of the solution and (ii) nanoparticle material from the nanoparticle component of the solution; and exposing the substrate to plasma generated using a plasma gas chemistry to volatize the sacrificial bracing material.. .
Lam Research Corporation


04/07/16
20160099155 
 Methods of forming a hard mask layer and of fabricating a semiconductor device using the same patent thumbnailMethods of forming a hard mask layer and of fabricating a semiconductor device using the same
A method of forming a hard mask layer on a substrate includes forming an amorphous carbon layer using nitrous oxide (n2o). A source of carbon and the nitrous oxide (n2o) are introduced to the substrate under a plasma ambient of an inert gas.
Samsung Electronics Co., Ltd.


04/07/16
20160099148 
 Method of processing target object patent thumbnailMethod of processing target object
A controllability of a size of a mask can be improved in a multi-patterning method. A process of forming a silicon oxide film on a first mask and an antireflection film is performed.
Tokyo Electron Limited


04/07/16
20160099147 
 Gas flow profile modulated control of overlay in plasma cvd films patent thumbnailGas flow profile modulated control of overlay in plasma cvd films
Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions.
Applied Materials, Inc.


04/07/16
20160099144 
 Atomic layer deposition of high density silicon dioxide patent thumbnailAtomic layer deposition of high density silicon dioxide
Atomic layer deposition methods for the low temperature deposition of silicon dioxide films having low nitrogen content and low wet etch rates. Silicon dioxide films are deposited and treated with plasma and re-oxidized resulting in low nitrogen content films..
Applied Materials, Inc.


04/07/16
20160099133 
 Inert-dominant pulsing in plasma processing systems patent thumbnailInert-dominant pulsing in plasma processing systems
A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an rf signal having rf frequency.
Lam Research Corporation


04/07/16
20160099132 
 Ultra-high speed anisotropic reactive ion etching patent thumbnailUltra-high speed anisotropic reactive ion etching
A system and method for reactive ion etching (rie) system of a material is provided. The system includes a plasma chamber comprising a plasma source and a gas inlet, a diffusion chamber comprising a substrate holder for supporting a substrate with a surface comprising the material and a gas diffuser, and a source of a processing gas coupled to the gas diffuser.
The Penn State Research Foundation


04/07/16
20160099131 

Workpiece processing method


Disclosed is a method of processing a workpiece including a mask. The processing method includes: a first process of generating plasma of a first gas containing a silicon halide gas in a processing container of a plasma processing apparatus that accommodates a workpiece having a mask, to form a reactive precursor; a second process of purging a space in the processing container; a third process of generating plasma of a second gas containing oxygen gas in the processing container to form a silicon oxide film; and a fourth process of purging the space in the processing container.
Tokyo Electron Limited


04/07/16
20160099130 

Antenna for plasma generation and plasma processing device having the same


Provided are an antenna, which is disposed in a vacuum chamber for generating an inductively coupled plasma, and a plasma processing device. The antenna and the plasma processing device suppress increase of the impedance even if the antenna is lengthened.
Nissin Electric Co., Ltd.


04/07/16
20160097722 

Plasma diagnostic method and apparatus using raman scattering


A plasma diagnostic method and apparatus using raman scattering are disclosed herein. The plasma diagnostic method using raman scattering includes focusing a laser beam, controlled such that the laser beam enters a preset polarized state, into a gas within a vacuum chamber, generating plasma in response to the focusing of the laser beam, magnetizing the generated plasma by inducing an electromagnetic field using a radio frequency (rf) power source mounted on the vacuum chamber and configured to provide an rf signal, and performing plasma diagnostic parameter-based monitoring based on scattered light generated via the laser beam incident into the magnetized plasma..
Unist Academy-industry Research Corporation


04/07/16
20160097616 

Laser guided and laser powered energy discharge device


The present invention relates to a laser guided and powered directed energy weapon that combines two different lasers to accurately and efficiently deliver a high energy electromagnetic pulse (emp) to a target at long range. The method uses a high energy laser pulse with relatively long pulse duration focused in air to create a plasma ball which emits an intense emp.

04/07/16
20160097590 

Systems and methods for drying high aspect ratio structures without collapse using sacrificial bracing material that is removed using hydrogen-rich plasma


Systems and methods for drying a substrate including a plurality of high aspect ratio (har) structures are performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching solution and/or wet cleaning solution, respectively, and without drying the substrate. Fluid between the plurality of har structures is displaced using a solvent including a bracing material.
Lam Research Corporation


04/07/16
20160097513 

Broadband light source and optical inspector having the same


A broadband light source includes a first electrodeless lamp to generate first broadband light from plasma, a first elliptical reflector having first and second focuses, the first elliptical reflector enclosing a rear portion of the first electrodeless lamp positioned at the first focus of the first elliptical reflector such that the first broadband light is reflected from the first elliptical reflector toward a light collector as a collective light, a symmetrically curved reflector having a third focus, the symmetrically curved reflector positioned such that the third focus is coincident with one of the first and second focuses, and a laser irradiator to provide a laser beam to the first electrodeless lamp.. .

04/07/16
20160097119 

Atomic layer deposition chamber with thermal lid


Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel..
Applied Materials, Inc.


04/07/16
20160097118 

Inductively coupled plasma enhanced chemical vapor deposition


A deposition system may have at least a substrate mounted within a sealed chamber. A radio frequency energy can be supplied to an inductive source affixed to the sealed chamber with the inductive source having an inductive coil surrounding a tube.
Seagate Technology Llc


04/07/16
20160097089 

Methods of using inductively coupled plasma mass spectroscopy systems for analyzing a cellular sample


The invention relates to the use of inductively coupled plasma mass spectroscopy for cellular sample analysis. In some embodiments a method of performing mass spectroscopy analysis using an inductively coupled plasma mass spectroscopy system is provided.
Fluidigm Canada Inc.


04/07/16
20160096920 

Process for the preparation of an object supporting a lipid bilayer


A process for the preparation of an object, supporting a lipid bilayer, for use in tissue engineering including the steps of providing an object having a surface, treating the surface of the object with a plasma containing active oxygen to provide the surface of the object with reactive groups a, to provide the surface of the object with reactive groups a, covalently attaching a sterol group to the reactive groups a and contacting the object activated with sterol groups with a lipid solution to form a lipid bilayer.. .
Universiteit Twente


04/07/16
20160096886 

Methods for administering anti-il-5 antibodies


The present invention relates generally to the methods for the treatment and diagnosis of conditions mediated by il-5 and excess eosinophil production, and more specifically to mabs, fabs, chimeric and humanized antibodies. More particularly, methods are provided for reducing eosinophils in a human in need thereof, which method comprises administering to said human a composition comprising at least one anti-il-5 antibody, wherein at least one anti-il-5 antibody provides a mean maximum plasma concentration of said anti-il-5 antibody of at least about 1.03±0.21 μg/ml, an area under the curve value of at least about 15.5±2.7 μg/day/ml and a serum half-life of about 16.2±2.1 days to about 21.7±2.8 days..
Glaxosmithkline Llc


04/07/16
20160096839 

Pyrimidinones as factor xia inhibitors


Or stereoisomers, tautomers, or pharmaceutically acceptable salts thereof, wherein all the variables are as defined herein. These compounds are selective factor xia inhibitors or dual inhibitors of fxia and plasma kallikrein.

04/07/16
20160096820 

Inhibitors of inv(16) leukemia


This invention describes the development of targeted small molecule inhibitors of the inv(16) fusion, the causative agent in ˜12% of acute myeloid leukemia (aml). The inv(16) fusion results in expression of the cbfβ-smmhc fusion protein in the blood cells of afflicted patients.
University Of Virginia Patent Foundation


04/07/16
20160096377 

Modification device, modification method, computer program product, image forming apparatus, and image forming system


A modification device includes: a plasma processing unit that performs plasma processing on a processed object such that a surface of the processed object has a predetermined water contact angle; and a cooling unit that cools the surface of the processed object at least from when the plasma processing is performed to when ink is discharged such that a surface temperature of the processed object during discharge of the ink to the processed object is a temperature at which a target water contact angle range is achieved.. .
Ricoh Company, Ltd.


04/07/16
20160096148 

Ceramic whole blood hollow fiber membrane filter medium and use thereof for separationg blood plasma/serum from whole blood


A whole blood hollow fiber membrane filter medium is provided with a ceramic material having pores of a pore size that ensures permeability to blood plasma or serum and its molecular components while blood cells are retained. The whole blood hollow fiber membrane filter medium is used for separating blood plasma from whole blood, wherein the blood plasma preferably shows no hemolysis..
Mann+hummel Gmbh


04/07/16
20160095645 

Electrosurgery apparatus, in particular for ablation of a tissue mass from the body of a human or animal patient


An electrosurgical apparatus includes a generator system configured to generate a radio-frequency electric signal, and a handpiece to be gripped by an operator and having an end fitted with an active electrode electrically connected to the generator system. The signal is capable of polarizing the active electrode so as to generate a glow plasma discharge in the atmosphere when the active electrode is in the proximity of the tissue mass, without propagation of electric current through the patient's body (b)..
Otech Industry S.r.l.


04/07/16
20160095644 

Cold plasma scalpel


An attachment for an electrosurgical hand piece. The attachment comprises a probe assembly having an elongated tube having a proximal end and a distal end, and an electrode.
U.s. Patent Innovations, Llc


03/31/16
20160095196 

Detecting plasma arcs by monitoring rf reflected power in a plasma processing chamber


Embodiments of the present disclosure generally relate to methods for detecting unstable plasma in a substrate processing chamber. In one embodiment, the method includes providing a forward power from a power source to the substrate processing chamber through a detection device, splitting the forward power passing through the detection device at a predetermined ratio to obtain a first value of the power to the substrate processing chamber, measuring a reflected power from the substrate processing chamber to obtain a second value of the power from the substrate processing chamber, and directing the power source to turn off the forward power if the second value of the power is different than the first value of the power..
Applied Materials, Inc.


03/31/16
20160095195 

Plasma cutting torch, nozzle and shield cap


A plasma torch assembly, and components thereof, is provided with optimized attributes to allow for improved torch durability add versatility. A torch nozzle is provided having a novel design, including exterior cooling channels running along a length of the nozzle.
Lincoln Global, Inc.


03/31/16
20160093528 

Feature fill with nucleation inhibition


Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile.
Lam Research Corporation


03/31/16
20160093526 

Diffusion barrier layer formation


A method of forming a titanium nitride (tin) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first tin layer with a first nitrogen concentration making a lower portion of the tin diffusion barrier, the first nitrogen concentration of the first tin layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the tin diffusion barrier to prevent fluorine diffusion. The first tin layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second tin layer with a second nitrogen concentration above the first tin layer making an upper portion of the tin diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma..
International Business Machines Corporation


03/31/16
20160093506 

Silicon oxide selective removal


A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor in combination with an oxygen-containing precursor.
Applied Materials, Inc.


03/31/16
20160093505 

Oxide etch selectivity enhancement


A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor in combination with an oxygen-containing precursor.
Applied Materials, Inc.


03/31/16
20160093501 

Method for controlling etching in pitch doubling


Embodiments of the invention describe a method for controlling etching in pitch doubling. According to one embodiment, the method includes receiving a substrate having a pattern thereon defined by spacers formed on sidewalls of a plurality mandrels, and transferring the pattern defined by the spacers into the substrate using a plasma etch process that etches the mandrels and the substrate, the transferring forming first recessed features in the substrate below the mandrels and second recessed features in the substrate between the mandrels, where the plasma etch process utilizes an etching gas containing o2 gas, and the relative amount of o2 gas in the etching gas is selected to control the depth of the first recessed features relative to the depth of second recessed features.
Tokyo Electron Limited


03/31/16
20160093500 

Method for processing a carrier, a operating a plasma processing chamber, and a processing a semiconductor wafer


According to various embodiments, a method for processing a carrier may include: performing a dry etch process in a processing chamber to remove a first material from the carrier by an etchant, the processing chamber including an exposed inner surface including aluminum and the etchant including a halogen; and, subsequently, performing a hydrogen plasma process in the processing chamber to remove a second material from at least one of the carrier or the inner surface of the processing chamber.. .
Infineon Technologies Ag


03/31/16
20160093490 

Method for making semiconductor devices including reactant treatment of residual surface portion


A method for making semiconductor devices may include forming a phosphosilicate glass (psg) layer on a semiconductor wafer, with the psg layer having a phosphine residual surface portion. The method may further include exposing the phosphine residual surface portion to a reactant plasma to integrate at least some of the phosphine residual surface portion into the psg layer.
Stmicroelectronics Pte Ltd


03/31/16
20160093488 

Flowable low-k dielectric gapfill treatment


Methods are described for forming a flowable low-k dielectric film on a patterned substrate. The film may be a silicon-carbon-oxygen (si—c—o) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region.
Applied Materials, Inc.


03/31/16
20160093476 

Substrate processing apparatus, manufacturing semiconductor device and non-transitory computer-readable recording medium


Provided is a technique of uniformly processing a substrate within a short time by supplying a sufficient amount of active species to a surface of the substrate. A substrate processing apparatus includes: a process chamber; a discharge chamber; a plasma source; an exhaust system; a process gas supply system including a temporary storage unit; and a control unit configured to control the plasma source, the exhaust system and the process gas supply system to: intermittently supply a process gas temporarily stored in the temporary storage unit into the discharge chamber; and supply the process gas activated in the discharge chamber from the discharge chamber into the process chamber having an inner pressure lower than an inner pressure of the discharge chamber..
Hitachi Kokusai Electric Inc.


03/31/16
20160093475 

Method and generating plasma pulses


A method and apparatus generates pulses that can be used for high-precision three-dimensional plasma treatment. At least two sources are furnished with at least one time function, wherein each of the at least two sources radiates an electromagnetic field generated by one of the time functions, and the at least one time function.
Forschungsverbund Berlin E.v.


03/31/16
20160093474 

Substrate processing method


A substrate processing method for performing a plasma process on a processing target substrate by a plasma processing apparatus is provided. The plasma processing apparatus comprises: a processing chamber; a gas supply unit; a mounting table; a microwave generator; a dielectric plate; a slot antenna plate; a wavelength shortening plate; and a microwave supply unit, and the microwave supply unit comprises a coaxial waveguide and a distance varying device.
Tokyo Electron Limited


03/31/16
20160093473 

Systems and methods of treating a substrate


Substrate treating systems are disclosed. The system may include a chamber with a processing space, a supporting unit provided in the processing space to support a substrate, a gas supplying unit provided in the processing space to supply gas into the processing space, a plasma source unit generating plasma from the gas, and a liner unit disposed to enclose the supporting unit.
Semes Co., Ltd.


03/31/16
20160093472 

Gas distribution device with actively cooled grid


A grid assembly for a substrate processing system includes a first portion including a first body defining a central opening, an inlet, an outlet, and an upper manifold that is located in the first body and that is in fluid communication with the inlet or the outlet. A second portion is arranged adjacent to the first portion and includes a second body defining a central opening.
Lam Research Corporation


03/31/16
20160093471 

Rotating rf electric field antenna for uniform plasma generation


A plasma processing chamber includes a substrate support for receiving and holding a substrate. A window in the plasma processing chamber is oriented over the substrate support.
Lam Research Corporation


03/31/16
20160093469 

Etching apparatus and etching method


According to one embodiment, an etching apparatus includes a stage in an etching chamber, the stage which holds one of a first substrate and a second substrate, a plasma generator in the etching chamber, the plasma generator which is opposite to the stage and irradiates an ion beam toward the stage, a grid which is provided between the plasma generator and the stage, a supporter supporting the stage, the supporter having a rotational axis in a direction in which the ion beam is irradiated, a controller which is configured to mount the first substrate on the stage and irradiate the ion beam with the beam angle larger than 0° to the first substrate, when an elapsed time from an end of an etching of a predetermined layer in the second substrate is equal to or larger than a predetermined time.. .

03/31/16
20160093463 

Focused ion beam systems and methods of operation


A focused ion beam system is provided. The focused ion beam system includes a plasma generation chamber configured to contain a source gas that is radiated with microwaves to produce plasma.
Indian Institute Of Technology Kanpur


03/31/16
20160093460 

Photocathode device that replenishes photoemissive coating


A photocathode device may replenish its photoemissive coating to replace coating material that desorbs/evaporates during photoemission. A linear actuator system may regulate the release of a replenishment material vapor, such as an alkali metal, from a chamber inside the photocathode device to a porous cathode substrate.
Los Alamos National Security, Llc


03/31/16
20160093409 

Guard aperture to control ion angular distribution in plasma processing


A guard aperture is described to control the ion angular distribution in plasma processing in one example a workpiece processing system has a plasma chamber, a plasma source to generate a plasma containing gas ions in the plasma chamber, the plasma forming a sheath above the workpiece, the sheath having an electric field, a workpiece holder in the chamber to apply a bias voltage to the workpiece to attract ions across the plasma sheath to be incident on the workpiece, a control aperture between the sheath and the workpiece, the aperture being positioned to modify an angular distribution of the ions that are incident on the workpiece, and a guard aperture between the sheath and the control aperture to isolate an electrical field of the control aperture from the plasma sheath.. .

03/31/16
20160093406 

Fusion energy device with internal ion source


An improved fusion reactor design with provision for supplying plasma fuel inside a model reactor without consuming additional power in the process. Embodiments provide free choice of useful fuels from the full range of fusible isotopes.

03/31/16
20160091513 

Test strips for determining coagulation factor activities


Test strips for determining the activity of a coagulation factor in a blood sample are provided. The strip comprises a support, a sample inlet port for deposition of a blood sample, and a reaction area comprising a blood coagulation reagent.
Struszym, S.l.


03/31/16
20160091497 

Highly sensitive biomarker panels


Cardiovascular disease, e.g., congestive heart failure, is often first diagnosed after the onset of clinical symptoms, eliminating potential for early intervention. The invention provides a multi-marker immunoassay, including cardiac pathology and vascular inflammation biomarkers, yielding a more sensitive assay for early detection of chf in plasma.
Singulex, Inc.


03/31/16
20160091464 

Method for estimating detonation performance of materials


A method for estimating the detonation performance of a material is executed by first preparing a small sample of the material to be tested. That sample is lased with a laser beam having sufficient energy to induce a plasma from a portion of the sample and to produce a shock wave, without detonation of the sample.
U.s. Army Research Laboratory Attn: Rdrl-loc-i


03/31/16
20160090650 

Method and rf compensation in plasma assisted atomic layer deposition


The embodiments herein relate to methods, apparatus, and systems for depositing film on substrates. In these embodiments, the substrates are processed in batches.
Lam Research Corporation


03/31/16
20160090649 

Method to obtain sic class of films of desired composition and film properties


Provided are methods and systems for providing silicon carbide class of films. The composition of the silicon carbide film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors.
Novellus Systems, Inc.


03/31/16
20160090588 

Device for preparation and analysis of nucleic acids


An integrated “lab-on-a-chip” microfluidic device performs nucleic acid sample preparation and diagnostic analysis from test samples containing cells and/or particles. The device analyzes dna or rna targets, or both, from a common test sample.
Micronics, Inc.


03/31/16
20160089744 

Plasma cutting torch, nozzle and shield cap


A plasma torch assembly, and components thereof, is provided with optimized attributes to allow for improved torch durability add versatility. A torch nozzle is provided having a novel design, including exterior cooling channels running along a length of the nozzle.
Lincoln Global, Inc.


03/31/16
20160089695 

Bondable fluorinated barrier coatings


Bondable fluorinated barrier coatings on oxidized metal surfaces. The barrier coatings include a perfluorinated silane having a c2-c30 alkyl chain with a reactive silicon end containing 1 to 3 leaving groups.
United States Government As Represented By The Secretary Of The Army


03/31/16
20160089630 

Vacuum foreline reagent addition for fluorine abatement


Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a foreline having a first end configured to couple to an exhaust port of a vacuum processing chamber, and an injection port is formed in the foreline.
Applied Materials, Inc.


03/31/16
20160089545 

Methods and delivery of molecules across layers of tissue


Exemplary methods of opening pores and moving molecules into tissue comprising, applying plasma to the surface of tissue and applying a carrier including one or more molecules to the surface of the tissue are disclosed herein.. .
Ep Technologies Llc


03/31/16
20160089433 

Induction of il-12 using immunotherapy


The present invention relates to compositions and methods that promote the induction of il-12 in a patient. The composition includes activated allogeneic cells that are administered to a patient with a disease such as cancer.
Immunovative Therapies, Ltd.


03/31/16
20160089347 

Controlled release delivery system for nasal application of neurotransmitters


This invention relates to a galenical gel formulation for nasal administration of neurotransmitters/neuromodulators such as dopamine, serotonin or pregnenolone and progesterone. The special lipophilic or partly lipophilic system of the invention leads to high bioavailability of the active ingredient in plasma and brain caused by sustained serum levels and/or direct or partly direct transport from nose to the brain..
Mattern Pharma Ag


03/24/16
20160087600 

Nanomechanical resonator array and production method thereof


In the present invention, a nanomechanical resonator array (1), which is suitable being used in an oscillator and production method of said nanomechanical resonator array are developed. Said resonator array (1) comprises at least two resonators (2), which are in the size of nanometers, which are vertically arrayed and which are preferably in the form of nano-wire or nano-tube; at least one coupling membrane (3), which mechanically couples said resonators (2) from their one ends, and at least one clamping element (4), which supports mechanical coupling by clamping said coupling membrane (3).
Koc Universitesi


03/24/16
20160087297 

Cooling system for fuel cells


A fuel cell assembly has a fuel cell with a membrane electrode assembly disposed between an anode fluid flow plate and a cathode fluid flow plate. The cathode flow plate defines a flow channel for conveying oxidant to the membrane electrode assembly.
Intelligent Energy Limited


03/24/16
20160087195 

Etching apparatus and etching method


According to one embodiment, an etching apparatus includes an etching chamber, a stage in the etching chamber, a plasma generator in the etching chamber, the plasma generator being opposite to the stage and irradiating an ion beam toward the stage, a supporter supporting the stage, the supporter having a rotational axis in a direction in which the ion beam is irradiated, a first driver changing a beam angle between a direction which is perpendicular to an upper surface of the stage and the direction in which the ion beam is irradiated, and a second driver which rotates the stage on the rotational axis.. .

03/24/16
20160087105 

Method for manufacturing semiconductor device


A method for manufacturing a semiconductor device, including the steps of forming a semiconductor over a substrate; forming a first conductor over the semiconductor; forming a first insulator over the first conductor; forming a resist over the first insulator; performing light exposure and development on the resist to make a second region and a third region remain and expose part of the first insulator; applying a bias in a direction perpendicular to a top surface of the substrate and generating plasma using a gas containing carbon and halogen; and depositing and etching an organic substance with the plasma. The etching rate of the organic substance is higher than the deposition rate of the organic substance in an exposed part of the first insulator, and the deposition rate of the organic substance is higher than the etching rate of the organic substance in a side surface of the second region..
Semiconductor Energy Laboratory Co., Ltd.


03/24/16
20160087085 

Method for manufacturing semiconductor device


To provide a semiconductor device with improved reliability. To provide a semiconductor device with stable characteristics.
Semiconductor Energy Laboratory Co., Ltd.


03/24/16
20160087049 

Epitaxial silicon wafer


An epitaxial silicon wafer includes: a silicon wafer; and a silicon epitaxial layer formed on the silicon wafer, in which a w concentration obtained by a metal analysis of a surface of the silicon epitaxial layer using an inductively coupled plasma mass spectrometry is 1×106 atoms/cm2 or less. Further, the w concentration obtained by the metal analysis of the surface of the silicon epitaxial layer using the inductively coupled plasma mass spectrometry is preferably 1×107 atoms/cm2 or less..
Sumco Corporation


03/24/16
20160086852 

Proximity contact cover ring for plasma dicing


Methods of and carriers for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a cover ring for protecting a carrier and substrate assembly during an etch process includes an inner opening having a diameter smaller than the diameter of a substrate of the carrier and substrate assembly.

03/24/16
20160086851 

Hybrid wafer dicing approach using an adaptive optics-controlled laser scribing process and plasma etch process


Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits.

03/24/16
20160086829 

Systems and methods for drying high aspect ratio structures without collapse using stimuli-responsive sacrificial bracing material


Systems and methods for drying a substrate including a plurality of high aspect ratio (har) structures is performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching fluid and/or wet cleaning fluid, respectively, and without drying the substrate. Fluid between the plurality of har structures is displaced using a solvent including a bracing material.
Lam Research Corporation


03/24/16
20160086817 

Plasma etching method and plasma etching apparatus


A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step..
Tokyo Electron Limited


03/24/16
20160086816 

Chlorine-based hardmask removal


A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process.
Applied Materials, Inc.


03/24/16
20160086815 

Fluorine-based hardmask removal


A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process.
Applied Materials, Inc.


03/24/16
20160086808 

Procedure for etch rate consistency


Methods of conditioning interior processing chamber walls of an etch chamber are described. A fluorine-containing precursor may be remotely or locally excited in a plasma to treat the interior chamber walls periodically on a preventative maintenance schedule.
Applied Materials, Inc.


03/24/16
20160086807 

Silicon etch process with tunable selectivity to sio2 and other materials


A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including nh3 and nf3 to form a stream of plasma products, controlling a flow of un-activated nh3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated nh3 until the pressure is within a tolerance of a desired pressure. An etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated nh3..
Applied Materials, Inc.


03/24/16
20160086806 

Method for disconnecting polysilicon stringers during plasma etching


A method of fabricating wordlines in semiconductor memory structures is disclosed that eliminates stringers between wordlines while maintaining a stable distribution of threshold voltage. A liner is deposited before performing a wordline etch, and a partial wordline etch is then performed.
Macronix International Co., Ltd.


03/24/16
20160086797 

Substrate processing method and substrate processing apparatus


A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.. .
Hitachi Kokusai Electric Inc.


03/24/16
20160086795 

Internal plasma grid applications for semiconductor fabrication


The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers.
Lam Research Corporation


03/24/16
20160086792 

Method for evaluating semiconductor film and manufacturing semiconductor device


A method for evaluating a semiconductor film of a semiconductor device which is configured to include an insulating film, the semiconductor film, and a conductive film and to have a region where the semiconductor film and the conductive film overlap with each other with the insulating film provided therebetween, includes a step of performing plasma treatment after formation of the insulating film, and a step of calculating a peak value of resistivity of a microwave in the semiconductor film by a microwave photoconductive decay method after the plasma treatment, so that the hydrogen concentration in the semiconductor film is estimated.. .
Semiconductor Energy Laboratory Co., Ltd.


03/24/16
20160086776 

Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly


An inner electrode of a showerhead electrode assembly useful for plasma etching includes features providing improved positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. The assembly can include a thermal gasket set and fasteners such as bolts or cam locks located on a radius of ¼ to ½ the radius of the inner electrode.
Lam Research Corporation


03/24/16
20160086775 

Apparatus and depositing electronically conductive pasting material


A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base.
Applied Materials, Inc.


03/24/16
20160086774 

Plasma processing apparatus, plasma processing method, and manufacturing electronic device


In an inductively-coupled plasma torch unit, a coil, a first ceramic block, and a second ceramic block are arranged, parallel to one another, and an elongated chamber has an annular shape. Plasma generated inside the chamber is ejected toward a substrate through an opening portion in the chamber.
Panasonic Intellectual Property Management Co., Ltd.


03/24/16
20160086773 

Plasma processing apparatus


A plasma processing apparatus includes a reaction chamber for performing a plasma process on a substrate. A pedestal to receive the substrate thereon is provided in the reaction chamber.
Tokyo Electron Limited


03/24/16
20160086772 

Auto frequency tuned remote plasma source


A remote plasma source is disclosed that includes a core element and a first plasma block including one or more surfaces at least partially enclosing an annular-shaped plasma generating region that is disposed around a first portion of the core element. The remote plasma source further comprises one or more coils disposed around respective second portions of the core element.
Applied Materials, Inc.


03/24/16
20160086771 

Silicon dioxide-polysilicon multi-layered stack etching with plasma etch chamber employing non-corrosive etchants


Multilayered stacks having layers of silicon interleaved with layers of a dielectric, such as silicon dioxide, are plasma etched with non-corrosive process gas chemistries. Etching plasmas of fluorine source gases, such as sf6 and/or nf3 typically only suitable for dielectric layers, are energized by pulsed rf to achieve high aspect ratio etching of silicon/silicon dioxide bi-layers stacks without the addition of corrosive gases, such as hbr or cl2.

03/24/16
20160086759 

Plasma generator with at least one non-metallic component


A plasma generator for an ion implanter is provided. The plasma generator includes an ionization chamber for forming a plasma that is adapted to generate a plurality of ions and a plurality of electrons.
Nissin Ion Equipment Co., Ltd.


03/24/16
20160086680 

Positron systems for energy storage, production and generation


A positron based system is disclosed which extracts electric power from matter-antimatter annihilation reactions between electrons and positrons. In one embodiment, for storage and distribution of electric power, a solar array provides power to a cyclotron that produces the positron emitter 52manganese.

03/24/16
20160084856 

Hdl-associated protein extraction and detection


Provided herein are compositions, systems, and methods for extracting and detecting at least one hdl-associated protein (e.g., apoa1) from a sample (e.g., plasma or serum sample). In certain embodiments, a strong organic acid and hydrophilic organic solvent are mixed with the sample; after centrifugation, the supernatant is transferred to a second container where it is mixed with a non-polar organic solvent; after centrifugation, the lower aqueous layer is transferred to a third container; and then at least a portion of the transferred aqueous layer is subjected to a detection assay such that at least one hdl-associated protein is detected..
Cleveland Heartlab, Inc.


03/24/16
20160084778 

Method for exanimation of element in living body


The nutritionally and/or medically significant measured value on mineral elements contained in the body of a test subject can be detected by a hair test. The signal ratio pxrf(s) of said mineral element contained in the hair of said test subject to sulfur contained therein is measured by fluorescent x-ray spectroscopy, and then is multiplied by a conversion factor f to determine the element content mxrf of the mineral element in the hair.
Mineral Research Society


03/24/16
20160084757 

Analytes monitoring by differential swept wavelength absorption spectroscopy methods


The present invention relates to a method, apparatus and system for measuring the content of either one or more gas analytes that may be part of a gas. The present invention applies a spectroscopic method that utilizes an extremely narrow linewidth laser beam that is absorbed when its wavelength is swept across the interval containing the absorption line of the analyte.
Ngp Inc


03/24/16
20160084709 

Handheld libs spectrometer


A handheld libs spectrometer system features an optics stage moveable with respect to a housing and including a laser focusing lens. A laser source is mounted in the housing for directing a laser beam to a sample via the laser focusing lens.
Sciaps, Inc.


03/24/16
20160084572 

Process control methods for obtaining and maintaining a desired moisture content of spray dried plasma


A method of controlling the moisture content of a spray dried product by measuring the drying gas flow exhaust temperature and adjusting the drying gas flow rate to maintain a predetermined exhaust temperature that results in the production of a spray dried product with a desired moisture content. A preferred product is spray dried human plasma..
Velico Medical, Inc.


03/24/16
20160084400 

Method and system for supplying a cleaning gas into a process chamber


A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions.
Applied Materials, Inc.






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