|| List of recent Plasma-related patents
|System and method for sensing tissue characteristics|
A medical device for treating and analyzing tissue includes a plasma applicator having a housing. The housing includes a substantially tubular shape and defines a lumen therethrough.
|Flow promoting ocular implant device and methods|
Disclosed are devices and methods for treatment of eye disease such as glaucoma. Implants are described herein that create a flow field, such as between the anterior chamber and either the supraciliary space or suprachoroidal space.
|Combined processes for utilizing synthesis gas with low co2 emission and high energy output|
A process and system for producing liquid and gas fuels and other useful chemicals from carbon containing source materials comprises cool plasma gasification and/or pyrolysis of a source material to produce synthesis gas using the produced synthesis gas for the production of a hydrocarbon, methanol, ammonia, urea, and other products. The process and system are capable of sequestering carbon dioxide and reducing nox and sox..
|Method for filling recesses using pre-treatment with hydrocarbon-containing gas|
A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule..
|Semiconductor device manufacturing method|
A semiconductor device manufacturing method is provided that includes etching with a plasma a multilayer film including a first film and a second film with differing dielectric constants alternately stacked on a substrate using a photoresist layer arranged on the multilayer film as a mask, and forming the multilayer film into a stepped configuration. The semiconductor device manufacturing method includes repetitively performing a first step of etching the first film using the photoresist layer as the mask; a second step of adjusting a pressure within a processing chamber to 6-30 torr, generating the plasma by applying a first high frequency power for biasing and a second high frequency power for plasma generation to the lower electrode, and etching the photoresist layer using the generated plasma; and a third step of etching the second film using the photoresist layer and the first film as the mask..
|Directional sio2 etch using low-temperature etchant deposition and plasma post-treatment|
Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (nh4f), and annealing the substrate to a first temperature to sublimate one or more volatile byproducts..
|Plasma processing apparatus and plasma processing method|
In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.. .
|Substrate etching method and substrate processing device|
A substrate etching method and a substrate processing device, the substrate etching method includes: s1: placing a substrate to be processed into a reaction chamber; s2: supplying etching gas into the reaction chamber; s3: turning on an excitation power supply to generate plasma in the reaction chamber; s4: turning on a bias power supply to apply bias power to the substrate; s5: turning off the bias power supply, and meanwhile, starting to supply deposition gas into the reaction chamber; s6: stopping supply of the deposition gas into the reaction chamber, and meanwhile, turning on the bias power supply; s7: repeating steps s5-s6, until the etching process is completed. In the whole etching process, the etching operation is always performed, and the deposition operation is performed sometimes.
|Laser, plasma etch, and backside grind process for wafer dicing|
Front side laser scribing and plasma etch are performed followed by back side grind to singulate integrated circuit chips (ics). A mask is formed covering ics formed on the wafer, as well as any bumps providing an interface to the ics.
|Method for avoiding influence of endogenous lipoprotein and reagent|
To identify the aforementioned interference component present in serum or plasma, to thereby provide means for avoiding any interference effect caused by the component.. .
|Coating process and coated article|
A coating process and coated article are disclosed. The coating process includes positioning an article relative to an inductor, heating the article with the inductor, then applying a coating material over the article to form a crystalline coating.
|Substrate processing apparatus and substrate processing method|
Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and a electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space.. .
|Therapeutic antigen-binding molecule with a fcrn-binding domain that promotes antigen clearance|
The present invention provides: a modified fcrn-binding domain having an enhanced affinity for the fc receptor neonatal (fcrn) at neutral ph; an antigen-binding molecule comprising said fcrn-binding domain, which has low immunogenicity, high stability and form only a few aggregates; a modified antigen-binding molecule having an increased fcrn-binding activity at neutral or acidic ph without an increased binding activity at neutral ph for a pre-existing anti-drug antibody; use of the antigen-binding molecules for improving antigen-binding molecule-mediated antigen uptake into cells; use of the antigen-binding molecules for reducing the plasma concentration of a specific antigen; use of the modified fcrn-binding domain for increasing the total number of antigens to which a single antigen-binding molecule can bind before its degradation; use of the modified fcrn-binding domain for improving pharmacokinetics of an antigen-binding molecule; methods for decreasing the binding activity for a pre-existing anti-drug antibody; and methods for producing said antigen-binding molecules.. .
|Apparatus for harvesting improved bone graft material utilizing an implantable biodegradable filter|
The present invention provides for the harvesting of specific materials in multiple stages of filtration of bone graft materials from a reaming device, specifics of interconnected stages, related filtration materials, and techniques. The harvesting process collects large material in a first stage, and other materials of a limited geometric size in at least a second stage of filtration.
|Device for sanitizing the air-conditioning system of vehicles using radiant catalytic ionization|
A device for sanitizing the air-conditioning system of vehicles using radiant catalytic ionization is provided. The device is mounted in a casing that includes a uvx lamp surrounded by a metal alloy that converts air/oxygen therein into a purifying plasma comprising hydroxyl radicals and hydrogen peroxide..
|Apparatus and method for determining denaturation thermograms of blood plasma or serum|
An apparatus for determining thermograms of blood plasma or serum includes two or more reaction vessels that each comprise a temperature sensing coil and a heating coil that is coaxial with and exterior to, or interleaved with, the temperature sensing coil. The apparatus also includes a heat conductive body having two or more cavities formed therein for receiving the reaction vessels.
|System for provision of analysis results, analysis terminal, and method for provision of analysis results|
To implement an analysis result provision system that can acquire an analysis result of a target substance without transferring the substance when the substance is analyzed using plasma light information occurred from plasma area where the substance is turned to plasma state, a provision system of analysis result includes an analytical terminal that turns a target substance to plasma state and acquires plasma light information occurred from plasma area, and a host computer. The host computer includes host side communication part that acquires plasma light information via telecommunication line, and information analysis part that analyzes the target substance using plasma light information acquired by the host side communication part.
|Plasma processing apparatus|
In a capacitively coupled plasma processing apparatus, a susceptor (lower electrode) 16 within a decompression chamber 10 faces an upper electrode 46 serving as a shower head. The susceptor 16 is electrically connected with a first high frequency power supply 36 and a second high frequency power supply 38 via matching devices 40 and 42, respectively.
|Apparatus for generating thermodynamically cold microwave plasma|
The invention relates to an apparatus for generating a thermodynamically cold plasma under standard atmospheric conditions by injecting microwave radiation at a frequency of >3 ghz into a plasma chamber (6) and subsequent superposition of a plurality of waves with constructive interference. The microwave radiation, which is generated in specifically geometrically arranged, preferably cylindrical resonant cavities in an evacuated anode block, is coupled out via hollow waveguides (5) and fed to a separated plasma chamber (6).
|Microwave emission mechanism, microwave plasma source and surface wave plasma processing apparatus|
A microwave emission mechanism includes: a transmission path through which a microwave is transmitted; and an antenna section that emits into a chamber the microwave transmitted through the transmission path. The antenna section includes an antenna having a slot through which the microwave is emitted, a dielectric member through which the microwave emitted from the antenna is transmitted and a closed circuit in which a surface current and a displacement current flow.
A method of manufacturing a semiconductor device includes forming first and second gate structures on a substrate in first and second regions, respectively, forming a first capping layer on the substrate by a first high density plasma process, such that the first capping layer covers the first and second gate structures except for sidewalls thereof, removing a portion of the first capping layer in the first region, removing an upper portion of the substrate in the first region using the first gate structure as an etching mask to form a first trench, and forming a first epitaxial layer to fill the first trench.. .
|Methods for simultaneous quantification of thyroid hormones and metabolites thereof by mass spectrometry|
The invention provides methods for simultaneously detecting or simultaneously quantifying any combination of thyroxine (t4), triiodothyronine (t3), 3,3′-diiodo-l-thyronine (3,3′-t2), 3-iodothyronamine (t1am), and, optionally, reverse t3 (rt3) in a sample obtained from a human. The method involves a simple, sensitive, accurate, and specific isotope dilution tandem mass spectrometry method for the simultaneous quantification of any combination of t4, t3, 3,3′-t2, t1am, and, optionally, rt3 in a sample obtained from a human, e.g., in human plasma or serum samples.
|Fluid analyzer with plasma emission unit and method of using same|
A fluid analyzer of a downhole tool positionable in a wellbore penetrating a subterranean formation is provided. The wellbore has a downhole fluid thereabout.
|Dry non-plasma treatment system and method of using|
A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure.
|Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission|
A method for estimating a temperature of a substrate includes generating plasma in a plasma processing system. The substrate is arranged on a substrate support structure in the plasma processing system.
|System and method for obtaining a cellular sample enriched with defined cells such as platelet rich plasma (prp)|
The invention relates to a system and method for obtaining a cellular fraction enriched with defined cells effective in promoting a defined cellular response from an in vivo cellular sample comprising: a collection tube for collecting a cell suspension (1), an anticoagulant portion (4), a portion of separation gel (3), a first collection syringe for collecting a cell depleted fluid (10), a second collection syringe for collecting the enriched cellular portion (11) and at least one needle (1o) for attaching to each syringe. The system is closable to the atmosphere, further wherein the cell suspension collection tube contains the gel (3) and the anticoagulant (4), the tube is adapted such that, when containing cell suspension and centrifuged after treatment yields separation fractions, a first fraction comprising cellular fluid (6), a second fraction comprises gel layer (3), a third fraction comprises enriched cellular portion (7) on top of the gel layer and a fourth fraction comprises a cell poor portion (8)..
|Electrolytic cell for heating electrolyte by a glow plasma field in the electrolyte|
An electrolytic cell for the generation of a plasma field in an electrolyte that heats the electrolyte forms part of a closed-loop heat transfer device, the electrolytic cell fluidly connected to a heat exchanger. A plasma electrode and a second electrode form part of the flow path of electrolyte from the tank to the heat exchanger.
|Gas treatment using surface plasma and devices therefrom|
Gas treatment systems and methods are provided. A system includes at least one device defining a space and having a gas inlet and a gas outlet.
|Processing system for non-ambipolar electron plasma (nep) treatment of a substrate with sheath potential|
A processing system is disclosed, having a plasma source chamber that excites source plasma to generate an electron beam, and a process chamber that houses a substrate for exposure of the substrate to the electron beam. The processing system also includes an electron injector that injects electrons from the source plasma into the electron beam as the electron beam enters the process chamber.
|Gas barrier element for pecvd reactors|
This disclosure relates to plasma processing for photovoltaic device manufacturing. Particularly to a plasma processing system that includes an electrode that allows gas to pass through into the process chamber that includes a substrate.
|Systems and methods for extracting platelet-rich plasma for therapeutic injection|
Systems and methods are provided for processing blood or a fluid containing blood plasma and platelets. The blood or fluid is continuously added into a fluid separation chamber, which is used to isolate platelet-rich plasma therein.
|Chamber wall of a plasma processing apparatus including a flowing protective liquid layer|
A semiconductor plasma processing apparatus includes a vacuum chamber in which semiconductor substrates are processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, and an rf energy source adapted to energize the process gas into the plasma state in the vacuum chamber. The apparatus can also include a chamber wall wherein the chamber wall includes a means for supplying a plasma compatible liquid to a plasma exposed surface thereof wherein the plasma compatible liquid flows over the plasma exposed surface thereby forming a flowing protective liquid layer thereon.
|Cyclic aluminum nitride deposition in a batch reactor|
A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles.
|Apparatus and method for etching organic layer|
Provided are an apparatus and method for etching an organic layer, in which an organic material deposited in a non-layer forming area of a substrate is etched. The apparatus includes an etching chamber; a plasma generator configured to supply plasma into the etching chamber; a stage disposed in the etching chamber and configured to support the substrate; and a mask configured to guide the plasma toward the non-pixel area..
|Plasma doping apparatus, plasma doping method, semiconductor device manufacturing method and semiconductor device|
A plasma doping apparatus which performs doping by injecting dopants into a substrate to be processed. The apparatus includes a processing container, a gas supplying unit configured to supply a doping gas and an inert gas for plasma excitation into the processing container, a holding table configured to hold the substrate to be processed, a plasma generating mechanism configured to generate plasma in the processing container using a microwave, a pressure adjusting mechanism configured to adjust a pressure in the processing container, and a control unit configured to control the plasma doping apparatus.
|Methods of crystallising thin films|
A method of crystallising a thin film (220) including the steps of: depositing a thin film (220) on a substrate (210; and exposing the thin film (220) as deposited on the substrate (210) and the substrate (210) to a plasma for a time period of greater than 5 minutes, wherein: the thin film (220) is one of an amorphous magneto optic material, an amorphous electro optic material or a nitride material; a gas (130) is excited with a radio frequency (rf) field to form the plasma; the thin film (220) and the substrate (210) are, in the course of being exposed to the plasma, heated to temperatures of between 400° c. And 550° c.
|Method of forming sigma-shaped trench|
A method of forming a Σ-shaped trench is disclosed. The method includes: providing a silicon substrate; and performing a plasma etching process to form a Σ-shaped trench in the silicon substrate.
|Driver circuit and semiconductor device|
The silicon nitride layer 910 formed by plasma cvd using a gas containing a hydrogen compound such as silane (sih4) and ammonia (nh3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906.
|Method for manufacturing semiconductor device|
To provide a method for manufacturing a thin film transistor in which contact resistance between an oxide semiconductor layer and source and drain electrode layers is small, the surfaces of the source and drain electrode layers are subjected to sputtering treatment with plasma and an oxide semiconductor layer containing in, ga, and zn is formed successively over the source and drain electrode layers without exposure of the source and drain electrode layers to air.. .
|Solid state source introduction of dopants and additives for a plasma doping process|
A method of doping a non-planar surface or a surface of a substrate subject to poor view factors is provided. The processing chamber comprises a window, walls, and a bottom of the processing chamber with oxygen-containing material, the processing chamber configured to supply oxygen radicals as an additive to doping materials.
|Cell carrier, associated methods for making cell carrier and culturing cells using the same|
A carrier for expansion of induced pluripotent stem cells is provided, wherein the carrier comprises a substrate comprising one or more outer surfaces, wherein the one or more outer surfaces are modified with gas plasma treatment, and one or more structured indentations on one or more of the outer surfaces. The carrier has a length at least about 0.2 mm, a width at least about 0.2 mm, and a height in a range from about 0.05 mm to 1.2 mm and each of the structured indentations has a major axis in a range from about 0.1 mm to 0.5 mm, a minor axis in a range from about 0.1 mm to 0.5 mm and a depth in a range from about 0.025 mm to about 0.5 mm.
|Compositions and methods for using platelet-rich plasma for drug discovery, cell nuclear reprogramming, proliferation or differentiation|
Methods are described for using compositions containing platelet-rich plasma for the treatment of a variety of tissue lesions, and the use of compositions containing platelet-rich plasma to accelerate or complete the differentiation of a cell line. Particularly, use of platelet-rich plasma in conjunction with cell differentiation..
|System and method for the re-anticoagulation of platelet rich plasma|
A method for the re-anticoagulation of platelet rich plasma in a blood apheresis system includes priming the blood apheresis system with anticoagulant, such that a volume of anticoagulant is transferred to a prp container. The method may then transfer the anticoagulant within the prp container to a red blood cell container, and collect a volume of platelet rich plasma within the prp container.
|Charged beam plasma apparatus for photomask manufacture applications|
Embodiments of the present invention generally provide an apparatus and methods for etching photomasks using charged beam plasma. In one embodiment, an apparatus for performing a charged beam plasma process on a photomask includes a processing chamber having a chamber bottom, a chamber ceiling and chamber sidewalls defining an interior volume, a substrate support pedestal disposed in the interior volume, a charged beam generation system disposed adjacent to the chamber sidewall, and a rf bias electrode disposed in the substrate support..
|Method and apparatus for fabricating a colored component for a watch|
A method of fabricating a component for use in a watch includes a step of depositing a first thin film on a wafer wherein the first thin film is adapted to allow light reflected away from the wafer to be indicative of a first color characteristic. The step of depositing the first thin film is performed by using a plasma-enhanced chemical vapor deposition process or a low pressure chemical vapor deposition process.
|Method to obtain sic class of films of desired composition and film properties|
Provided are methods and systems for providing silicon carbide class of films. The composition of the silicon carbide film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors.
|System and method of improving implant quality in a plasma-based implant system|
During the cleaning mode, the plasma is biased at a higher potential than the walls, thereby causing energetic ions from the plasma to strike the plasma wall, dislodging material previously deposited. This may be achieved through the use of one or more electrodes disposed in the plasma chamber, which are maintained at a first voltage during normal operating mode, and a second, higher voltage, during the cleaning mode..
|Method and apparatus for electrostatic painting using oxygen-enriched carrier fluid|
A method and an apparatus for industrial and professional electrostatic painting, in accordance with ionization parameters predetermined according to the type of material to be painted and implemented using an electrostatically charged pressurized carrier fluid (whether positively charged, negatively charged, or in the neutral plasma state) combined to a flow of atomized liquid paint or powder paint, including a step of oxygen-enrichment of the paint-carrier fluid in order to obtain a higher degree of electrostatic grip of the carrier fluid.. .
|Modified coagulation factor viia with extended half-life|
The present invention relates to the fields of factor vii (fvii) and factor viia (fviia) albumin linked polypeptides. More specifically, the invention relates to cdna sequences coding for human factor vii and factor viia and derivatives genetically fused to a cdna coding for human serum albumin which may be linked by oligonucleotides which code for intervening peptidic linkers such encoded derivatives exhibiting improved stability and extended functional plasma half-life, recombinant expression vectors containing such cdna sequences, host cells transformed with such recombinant expression vectors, recombinant polypeptides and derivatives which do have biological activities of the unmodified wild type protein but having improved stability and prolonged shelf-life and processes for the manufacture of such recombinant proteins and their derivatives.
|Method of manufacturing multi-layer thin film, member including the same and electronic product including the same|
Disclosed herein is a method of forming a multilayer thin film by depositing target particles, detached from a target by plasma discharge of inert gas, on a metal object using a multilayer thin film deposition apparatus and a multilayer thin film formed by the method. More specifically, a sputtering deposition apparatus is used as the multilayer thin film deposition apparatus.
|Method of manufacturing multi-layer thin film, member including the same and electronic product including the same|
A method of manufacturing a multi-layer thin film is provided. The method includes modifying a surface of a plastic object by plasma treatment, depositing at least one hardness-enhancing layer on the plastic object, and depositing a color layer on the hardness-enhancing layer.
|Harmonic cold plasma device and associated methods|
A method for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonics. The unit includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors.
|Apparatus for generating a hollow cathode arc discharge plasma|
An apparatus for generating a hollow cathode arc discharge plasma, including two plasma sources, each including a hollow cathode and an electrode which is associated with the hollow cathode and which has an opening that extends through the electrode, wherein the hollow cathodes of the two plasma sources are connected to a pulse generator which generates a bipolar, medium-frequency pulsed voltage between the two hollow cathodes. Here, in each of the two plasma sources, the hollow cathode is connected in an electrically conducting manner, directly or with interconnection of at least one current direction limiting component, to the associated electrode..
|Impedance tuning of an electrode-less plasma lamp|
A method for operating a plasma lamp apparatus. The method includes providing a resonator structure configured with a bulb comprising a fill mixture.
|Extreme ultraviolet light generation apparatus and control method for laser apparatus in extreme ultraviolet light generation system|
An extreme ultraviolet light generation apparatus may include a chamber containing a plasma generation region irradiated by a pulse laser beam from a laser apparatus, a target supply device configured to supply a plurality of targets consecutively to the plasma generation region in the chamber, a target detection unit configured to detect a target outputted from the target supply device, and a laser controller configured to control the laser apparatus; the laser controller generating a light emission trigger instructing a laser device included in the laser apparatus to emit a pulse laser beam, and outputting the generated light emission trigger to the laser apparatus, in accordance with a detection signal from the target detection unit; and the laser controller adjusting generation of the light emission trigger outputted consecutively to the laser apparatus so that a time interval of the light emission trigger is within a predetermined range.. .
|Insulation structure and insulation method|
An insulation structure provided among a plurality of electrodes for extraction of an ion beam from a plasma generating section is provided. The insulation structure includes an insulation member including a first part connected to a first electrode and a second part connected to a second electrode and configured to support the first electrode to the second electrode, a first cover surrounding at least a part of the first part to protect the first part from contamination particles, and a second cover surrounding at least a part of the second part to protect the second part from contamination particles.
|Plasma cutting method and plasma cutting device|
A plurality of cutout members are cut out from a plate blank by a plasma arc generated from a plasma torch by a method including a piercing step and a cutting step. In the piercing step, an aperture is formed on an outer peripheral side of a cutout member by maintaining the plasma torch at a first height from the plate blank on the outer peripheral side of the cutout member while the plasma arc is generated from the plasma torch and by moving the plasma torch relative to the plate blank in a horizontal direction.
|Heavy fossil hydrocarbon conversion and upgrading using radio-frequency or microwave energy|
Conversion of heavy fossil hydrocarbons (hfh) to a variety of value-added chemicals and/or fuels can be enhanced using microwave (mw) and/or radio-frequency (rf) energy. Variations of reactants, process parameters, and reactor design can significantly influence the relative distribution of chemicals and fuels generated as the product.