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Plasma patents

      

This page is updated frequently with new Plasma-related patent applications.




Date/App# patent app List of recent Plasma-related patents
08/18/16
20160242269 
 Device for treating a surface with a plasma patent thumbnailDevice for treating a surface with a plasma
A device for treating a surface with a dielectric barrier plasma, wherein the surface functions as a return electrode, having a housing (1), in which a high-voltage feed line, an electrode (8) which is connected to the high-voltage feed line, and a dielectric (9), which screens the electrode (8) with respect to the surface, are located, permits the plasma treatment of highly curved surfaces and of relatively large surface areas by virtue of the fact that the electrode (8) has the shape of a circle which is mounted in the housing (1) so as to be rotatable at least to a limited degree, and projects with a spherical section from an end-side opening (5) in the housing (1), and in that the electrode (8) is coated with the dielectric (9) in such a way that its spherical section projecting out of the housing (1) is covered by the dielectric (9) in every possible rotational position.. .
Cinogy Gmbh


08/18/16
20160242268 
 Extreme ultraviolet source with magnetic cusp plasma control patent thumbnailExtreme ultraviolet source with magnetic cusp plasma control
A laser-produced plasma extreme ultraviolet source has a buffer gas to slow ions down and thermalize them in a low temperature plasma. The plasma is initially trapped in a symmetrical cusp magnetic field configuration with a low magnetic field barrier to radial motion.
Plex Llc


08/18/16
20160240851 
 Method of producing triazine-based graphitic carbon nitride films patent thumbnailMethod of producing triazine-based graphitic carbon nitride films
Methods for fabricating triazene-based graphitic carbon nitride films are provided. A substrate can be coated with silk fibroin, submerged in the central zone of plasma, and provided with microwave power.

08/18/16
20160240708 
 Solar cell with a hetero-junction structure and  manufacturing the same patent thumbnailSolar cell with a hetero-junction structure and manufacturing the same
A solar cell with a hetero junction structure includes a substrate, a first buffer layer, a second buffer layer, a second n-type amorphous semiconductor layer, a second p-type amorphous semiconductor layer, a first transparent conductive oxide (tco) layer and a second tco layer. A method for manufacturing the aforesaid solar cell includes the steps of forming the first n-type and the first p-type amorphous semiconductor layers respectively on a first surface and a second surface of the substrate, dope-treating the first n-type and the first p-type amorphous semiconductor layers by a gas plasma, and forming a first and a second intrinsic amorphous semiconductor layers respectively on the first n-type and the first p-type amorphous semiconductor layers..
Neo Solar Power Corp.


08/18/16
20160240703 
 Nanostructured silicon based solar cells and methods to produce nanostructured silicon based solar cells patent thumbnailNanostructured silicon based solar cells and methods to produce nanostructured silicon based solar cells
The present invention relates to a plasma texturing method for silicon based solar cells and the nanostructured silicon solar cells produced thereof. The silicon based solar cell comprises a silicon substrate having in at least part of its surface conical shaped nanostructures having an average height between 200 and 450 nm and a pitch between 100 and 200 nm, thereby achieving low reflectance and minimizing surface charge recombination..
Danmarks Tekniske Universitet


08/18/16
20160240584 
 High-performance radiation detectors and methods of fabricating thereof patent thumbnailHigh-performance radiation detectors and methods of fabricating thereof
A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer.
Redlen Technologies, Inc.


08/18/16
20160240421 
 Barrier seal for electrostatic chuck patent thumbnailBarrier seal for electrostatic chuck
Provided is a barrier seal for an electrostatic chuck in the plasma etching process. The barrier seal comprises multiple sealing portions to block the connecting layer of the electrostatic chuck and the plasma gas.
Mfg Sealing Technology Co., Ltd.


08/18/16
20160240402 
 Systems and methods for internal surface conditioning in plasma processing equipment patent thumbnailSystems and methods for internal surface conditioning in plasma processing equipment
A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces.
Applied Materials, Inc.


08/18/16
20160240389 
 Selective etch for silicon films patent thumbnailSelective etch for silicon films
A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide.
Applied Materials, Inc.


08/18/16
20160240388 
 Method for roughness improvement and selectivity enhancement during arc layer etch using carbon patent thumbnailMethod for roughness improvement and selectivity enhancement during arc layer etch using carbon
A method of patterning a silicon containing arc (anti-reflective coating) layer underlying a patterned layer is described that includes establishing a flow of a process gas to a plasma processing system, selecting a process condition that increases an etch selectivity of the silicon containing arc layer relative to the patterned layer, igniting plasma from the process gas using a plasma source in accordance with the process condition, and exposing the substrate to the plasma to extend the feature pattern of the patterned layer into the silicon containing arc layer. The process gas includes a first gaseous molecular constituent composed of c, f and optionally h, a second gaseous molecular constituent composed of c, f, and optionally h, and a third gaseous molecular constituent composed of c and an element selected from the group consisting of h and f..
Tokyo Electron Limited


08/18/16
20160240385 

Gate electrode material residual removal process


The present disclosure provides methods for removing gate electrode residuals from a gate structure after a gate electrode patterning process. In one example, a method for forming high aspect ratio features in a gate electrode layer in a gate structure includes performing an surface treatment process on gate electrode residuals remaining on a gate structure disposed on a substrate, selectively forming a treated residual in the gate structure on the substrate with some untreated regions nearby in the gate structure, and performing a remote plasma residual removal process to remove the treated residual from the substrate..
Applied Materials, Inc.


08/18/16
20160240384 

Method for roughness improvement and selectivity enhancement during arc layer etch using hydrogen


A method of patterning a silicon containing arc (anti-reflective coating) layer underlying a patterned layer is described that includes establishing a flow of a process gas to a plasma processing system, selecting a process condition that increases an etch selectivity of the silicon containing arc layer relative to the patterned layer, igniting plasma from the process gas using a plasma source in accordance with the process condition, and exposing the substrate to the plasma to extend the feature pattern of the patterned layer into the silicon containing arc layer. The process gas includes a first gaseous molecular constituent composed of c, f and optionally h, a second gaseous molecular constituent composed of c, f, and optionally h, and a third gaseous molecular constituent containing atomic hydrogen, diatomic hydrogen, or a cxhy-containing gas, wherein x and y are real numbers greater than zero..
Tokyo Electron Limited


08/18/16
20160240383 

Method for roughness improvement and selectivity enhancement during arc layer etch via adjustment of carbon-fluorine content


A method of patterning a silicon containing arc (anti-reflective coating) layer underlying a patterned layer is described that includes establishing a flow of a process gas to a plasma processing system, selecting a process condition that increases an etch selectivity of the silicon containing arc layer relative to the patterned layer, igniting plasma from the process gas using a plasma source in accordance with the process condition, and exposing the substrate to the plasma to extend the feature pattern of the patterned layer into the silicon containing arc layer. The composition of the process gas and the flow rate(s) of the gaseous constituents in the process gas are selected to adjust the carbon-fluorine content..
Tokyo Electron Limited


08/18/16
20160240382 

Method for adjusting effective work function of metal gate


A method for adjusting an effective work function of a metal gate. The method includes forming a metal gate arrangement comprising at least a metal work function layer, and performing plasma treatment on at least one layer in the metal gate arrangement.
Institute Of Microelectronics, Chinese Academy Of Sciences


08/18/16
20160240374 

Method for forming insulating film and manufacturing semiconductor device


In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma cvd using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film..
Tokyo Electron Limited


08/18/16
20160240366 

Processing of semiconductor devices


A method of thinning a wafer includes thinning the wafer using a grinding process. The wafer, after the grinding processing, has a first non-uniformity in thickness.
Infineon Technologies Ag


08/18/16
20160240356 

Systems and methods for using multiple inductive and capacitive fixtures for applying a variety of plasma conditions to determine a match network model


Systems and methods for using multiple inductive and capacitive fixtures for applying a variety of plasma conditions to determine fixed parameters of a match network model are described. The multiple fixtures mimic various plasma conditions without occupying tool time in which a wafer is placed within a plasma chamber to generate the fixed parameters of the match network model..
Lam Research Corporation


08/18/16
20160240355 

System and differential etching


A plasma sputtering apparatus according to one embodiment includes a chamber and a reservoir in fluidic communication with the chamber. The reservoir stores a vapor source therein, and is configured to release vapor at a predetermined rate.
International Business Machines Corporation


08/18/16
20160240354 

Plasma ion source and charged particle beam apparatus


A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber and made of a dielectric material; a coil wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; an envelope surrounding the gas introduction chamber, the plasma generation chamber and the coil; and insulating liquid filled inside the gas introduction chamber, the plasma generation chamber and the envelope to immerse the coil and having an dielectric strength voltage relatively greater than that of the envelope and the same dielectric dissipation factor as the plasma generation chamber.. .
Hitachi High-technologies Corporation


08/18/16
20160240353 

Method for controlling potential of susceptor of plasma processing apparatus


Disclosed is a method of suppressing abnormal discharge through a space between a space and a susceptor. A pulse-modulated high frequency wave is supplied from at least one of a first high frequency power supply and a second high frequency power supply.
Tokyo Electron Limited


08/18/16
20160240352 

Plasma processing manufacturing electronic component


A plasma processing apparatus performs plasma processing on a substrate held by a carrier. The carrier includes a frame disposed around the substrate and a holding sheet which holds the substrate and the frame.
Panasonic Intellectual Property Management Co., Ltd.


08/18/16
20160240351 

Plasma producing apparatus


A plasma producing apparatus for plasma processing a substrate includes a chamber having an interior surface, a plasma production device for producing an inductively coupled plasma within the chamber, a substrate support for supporting the substrate during plasma processing, and a faraday shield disposed within the chamber for shielding at least part of the interior surface from material removed from the substrate by the plasma processing. The plasma production device includes an antenna and a rf power supply for supplying rf power to the antenna with a polarity which is alternated at a frequency of less than or equal to 1000 hz..
Spts Technologies Limited


08/18/16
20160240350 

Adjustable mass resolving aperture


Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture.
Glenn Lane Family Limited Liability Limited Partnership


08/18/16
20160240349 

Adjustable mass resolving aperture


Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture.
Glenn Lane Family Limited Liability Limited Partnership


08/18/16
20160240346 

Plasma ion source and charged particle beam apparatus


A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; an insulation member provided in the gas introduction chamber; a plasma generation chamber connected to the gas introduction chamber; a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; and an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein, wherein a size of the through-holes is smaller than a length of a plasma sheath.. .
Hitachi High-technologies Corporation


08/18/16
20160238622 

Biomarkers for memory loss


The present invention relates to methods of determining if a subject has an increased risk of suffering from memory impairment. The methods comprise analyzing at least one plasma sample from the subject to determine a value of the subject's lipidomic profile, and comparing the value of the subject's lipidomic profile with the value of a normal lipidomic profile.
University Of Rochester


08/18/16
20160238614 

Process for ultra-sensitive quantification of target analytes in complex biological systems


Antibody-free processes are disclosed that provide accurate quantification of a wide variety of low-abundance target analytes in complex samples. The processes can employ high-pressure, high-resolution chromatographic separations for analyte enrichment.
Battelle Memorial Institute


08/18/16
20160237957 

Module applying hydrogen generting device for supporting combustion of internal combustion engine


A module applying a hydrogen generating device for supporting combustion of an internal combustion engine is provided. A hydrogen generating device of the module primarily utilizes a plasma column to assist air and a hydrogen-containing substance to produce a plasma chemical reaction, such a hydrogen component is decomposed from the hydrogen-containing substance and transported into an internal combustion engine.
China New Energy Technology Co., Ltd.


08/18/16
20160237869 

Energy-saving type dielectric barrier discharge plasma nox reduction device


Disclosed is a nitrogen oxide reduction device using dielectric barrier discharge plasma. The plasma nitrogen oxide reduction device may limitedly emit nitrogen oxide with a form of no2 at a final outlet of the plasma nitrogen oxide reduction device by arranging a combustion unit, a wet treatment unit, and a plasma oxidizing unit in a housing.
Ecoenergen Co., Ltd.


08/18/16
20160237570 

Gas delivery process equipment


A method of preparing an aluminum tube for use as a gas line includes plating a nickel alloy throughout internal surfaces of the aluminum tube, to form the gas line. A gas line for transport of gases includes an aluminum tube with a nickel alloy coating throughout internal surfaces of the tube.
Applied Materials, Inc.


08/18/16
20160237566 

Film forming device and film forming method


When a film is formed atomic layer by atomic layer with a use of a raw material gas and a reaction gas, a raw material gas is supplied into a film-forming space in which a substrate is placed to adsorb a component of the raw material gas onto the substrate. Then, a reaction gas is supplied into the film-forming space.
Mitsui Engineering & Shipbuilding Co., Ltd.


08/18/16
20160237544 

Plasma spraying system with adjustable coating medium nozzle


A plasma spraying system is provided for coating a substrate. The plasma spraying system includes a plasma gun, a nozzle and a mounting system.
United Technologies Corporation


08/18/16
20160237479 

Methods and compositions for isothermal amplification and detection of mycoplasma pneumoniae


Disclosed herein are methods and compositions (e.g., oligonucleotide primers) for isothermal amplification and detection of m. Pneumoniae nucleic acids in a sample.
P3s Corporation.


08/18/16
20160237445 

Soybean pip1 promoter and its use in constitutive expression of transgenic genes in plants


The disclosure relates to gene expression regulatory sequences from soybean, specifically to recombinant dna constructs comprising the promoter of a soybean plasma membrane intrinsic protein gene and fragments thereof and their use in promoting the expression of one or more heterologous nucleic acid fragments in a constitutive manner in plants. The disclosure further discloses compositions, polynucleotide constructs, transformed host cells, transgenic plants and seeds containing the recombinant construct with the promoter, and methods for preparing and using the same..
E. I. Du Pont De Nemours And Company


08/18/16
20160237139 

Chimeric antigen receptor


The present invention provides a chimeric antigen receptor (car) comprising: (i) a b cell maturation antigen (bcma)-binding domain which comprises at least part of a proliferation-inducing ligand (april); (ii) a spacer domain (iii) a transmembrane domain; and (iv) an intracellular t cell signaling domain. The invention also provides the use of such a t-cell expressing such a car in the treatment of plasma-cell mediated diseases, such as multiple myeloma..
Ucl Business Plc


08/18/16
20160237126 

Light-activated chimeric opsins and methods of using the same


Provided herein are compositions comprising light-activated chimeric proteins expressed on plasma membranes and methods of using the same to selectively depolarize excitatory or inhibitory neurons.. .
The Board Of Trustees Of The Leland Stanford Junior University


08/18/16
20160236941 

Process for deoxidizing silicon


The invention relates to a process of use for deoxidizing silicon particles comprising at least the steps consisting in: (i) having surface-oxidized silicon particles that have a mean size of less than or equal to 10 μm, (ii) formulating said particles into the form of aggregates having a mean size ranging from 20 to 300 μm, (iii) bringing said aggregates from step (ii) into contact with a thermal plasma conveying hydrogen radicals under conditions suitable for the deoxidation thereof and for the non-evaporation thereof, and (iv) recovering a material deoxidized according to step (iii) in a liquid silicon bath.. .
Commissariat A L'energie Atomique Et Aux Energies Alternatives


08/18/16
20160236930 

Process for filling etched holes


A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole; (ii) reflowing the first polymer; (iii) exposing the wafer substrate to a controlled oxidative plasma; (iv) optionally repeating steps (i) to (iii); (v) depositing a layer of a photoimageable second polymer; (vi) selectively removing the second polymer from regions outside a periphery of the holes using exposure and development; and (vii) planarizing the frontside surface to provide holes filled with a plug comprising the first and second polymers, which are different than each other.
Memjet Technology Ltd.


08/18/16
20160236456 

Method of adhering ethyl vinyl acetate copolymer or derivative thereof layer to thermoplastic elastomer layer and laminate


A method of adhering an ethyl vinyl acetate copolymer or a derivative thereof layer to a thermoplastic elastomer layer includes providing the ethyl vinyl acetate copolymer or the derivative thereof layer; performing a first atmospheric environmental plasma treatment on a surface of the ethyl vinyl acetate copolymer or the derivative thereof layer to form a first modified surface; providing the thermoplastic elastomer layer; performing a second atmospheric environmental plasma treatment on a surface of the thermoplastic elastomer layer to form a second modified surface; forming an adhesive layer over the first modified surface, the second modified surface, or the first modified surface and the second modified surface; and adhering the first modified surface to the second modified surface through the adhesive layer.. .
Aeplasma 41 Co., Ltd.


08/18/16
20160236443 

Optically transparent composite film for display and manufacturing method therefor


The present invention relates to an optically transparent composite film for a display, comprising: a polymer substrate containing a transparent thermoplastic base resin; a plasma surface treatment layer formed on one surface of the polymer substrate and surface-modified through plasma treatment; an inorganic gas barrier layer formed on the upper surface of the plasma surface treatment layer; an organic-inorganic hybrid overcoating layer formed on the upper surface of the inorganic gas barrier layer and including a curable product of a curable sol solution; and an inorganic rear layer formed on the other surface of the polymer substrate.. .
Icomponents Co., Ltd.


08/18/16
20160236279 

Additive manufacturing apparatus and method


This invention concerns a laser solidification apparatus for building objects by layerwise solidification of powder material. The apparatus including a build chamber containing a build platform, a device for depositing layers of powder material on to the build platform, an optical unit for directing a laser beam to selectively solidify areas of each powder layer and a spectrometer for detecting characteristic radiation emitted by plasma formed during solidification of the powder by the laser beam.
Renishaw Plc


08/18/16
20160236002 

Device for treating a body surface of a living body


A device for treating a body surface of a living body by means of a dielectric barrier discharge plasma, with a planar, flexible dielectric (4) by which an electrode (1) attached to a high voltage source (3) is screened off from the body surface and which is suitable for placing on the body surface, functioning as counter-electrode, and is designed with a structured surface (7) which provides a gas space for the plasma discharge between dielectric (4) and body surface, which device permits the conduct of plasma treatment and the delivery of curative or healing substances without a change of the position of the device, by virtue of the fact that a layer (11) composed of a solid, open-pore matrix of a curative or healing material is arranged on the surface (7) of the dielectric (4).. .
Cinogy Gmbh


08/18/16
20160235881 

Non-adherent hydrogel coating for wound dressings and methods for making the same


A method for preparing a hydrogel coating for a wound dressing to provide the wound dressing with non-adhesion properties without interfering with the bioactivity of the agents contained in the wound dressing. The hydrogel coating is formed by treating the substrate with o2 plasma before applying a hydrogel precursor solution onto the substrate, and then curing the hydrogel precursor onto the substrate to form the hydrogel coating on the surface of the substrate.
University Of Manitoba


08/18/16
20160235874 

Sterilizing using ozone


The invention relates to a sterilizers and methods of sterilization of an instrument. The sterilizer includes an ozone generator, an air mover, an oxygen concentrator, and a controller.
Medaco International Health, Llc


08/18/16
20160235786 

Formulation, apparatus, and methods for treatment of brain trauma


A formulation comprising platelet rich plasma (prp) for treatment of patients who have experienced brain injury, consisting of a mixture of human autologous plasma, d5w, glutathione, methylcobalamin, and regular insulin. The formulation is infused directly adjacent to a patient's brain through the nostrils or nares of the nasal cavity.

08/18/16
20160235781 

Diuretic induced alterations of plasma volume


Provided are uses of a poloxamer and methods of administering a poloxamer for treating hemo-concentration, such as hemo-concentration resulting from dehydration and/or diuresis in a subject. Administration of a poloxamer prevents, treats or otherwise reduces adverse effects of hemo-concentration, dehydration and/or diuresis..
Mast Therapeutics, Inc.


08/18/16
20160235709 

Limited release lingual thioctic acid delivery systems


A diffusion rate limiting matrix is utilized to buccally, lingually and/or sublingually deliver thioctic acid. This limited release matrix is intended for general nutritional supplementation and/or the treatment of various physiological disorders.
Molecular Product Management Llc


08/18/16
20160235463 

Radiofrequency guidewire with controlled plasma generation and methods of use thereof


A radiofrequency guidewire includes a core wire configured to be coupled to a radiofrequency generator. The core wire includes a proximal end and a distal end with respect to the radiofrequency generator.
Retrovascular, Inc.


08/18/16
20160235462 

System and plasma sealing of tissue


In a preferred embodiment, the present invention is a plasma sealer attachment for an electrosurgical system. The attachment has a connector assembly, a cable, and a hand piece.
U.s. Patent Innovations Llc


08/11/16
20160234925 

Power supply apparatus


A power supply apparatus outputs an alternating-current voltage to a plasma generator being a capacitive load and the power supply apparatus has a configuration that a transformer included in the power supply apparatus has a secondary-side magnetizing inductance more than five times as great as a leakage inductance.. .
Toshiba Mitsubishi-electric Industrial Systems Corporation


08/11/16
20160234924 

Apparatus and plasma ignition with a self-resonating device


Methods and apparatus for igniting a process plasma within a plasma chamber are provided. One or more self-resonating devices are positioned within a plasma chamber relative to a plasma generation volume within the plasma chamber.
Mks Instruments Inc.


08/11/16
20160234923 

Power-supply device


A power supply apparatus includes a controller that performs the following action and resonance means for creating a resonance state between the power supply apparatus and a plasma generator. That is, the controller changes, when a value of electric power input equal to 100% (or a value of electric power input equal to or more than a threshold % and equal to or less than 100%) of a rated power is instructed, an inverter frequency and obtains an inverter output power factor for each of a plurality of inverter frequencies.
Toshiba Mitsubishi-elecrtric Industrial Systems Corporation


08/11/16
20160234920 

Extreme ultraviolet light generation apparatus


An extreme ultraviolet light generation apparatus may include: a chamber including a plasma generation region to which a target is supplied, the target being turned into plasma so that extreme ultraviolet light is generated in the chamber; a target supply part configured to supply the target to the plasma generation region by outputting the target as a droplet into the chamber; a droplet detector configured to detect the droplet traveling from the target supply part to the plasma generation region; an imaging part configured to capture an image of an imaging region containing the plasma generation region in the chamber; and a controller configured to control an imaging timing at which the imaging part captures the image of the imaging region, based on a detection timing at which the droplet detector detects the droplet.. .
Gigaphoton Inc.


08/11/16
20160233419 

Semiconductor device structures including silicon-containing dielectric materials


A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate.
Micron Technology, Inc.


08/11/16
20160233392 

Phosphor in inorganic binder for led applications


A method for fabricating an led/phosphor structure is described where an array of blue light emitting diode (led) dies are mounted on a submount wafer. A phosphor powder is mixed with an organic polymer binder, such as an acrylate or nitrocellulose.
Koninklijke Philips N.v.


08/11/16
20160233379 

Terahertz source chip, source device and source assembly, and manufacturing methods thereof


The present invention provides a terahertz source chip, a source device, a source assembly and manufacturing methods thereof. The source chip comprises: a two-dimensional electron gas mesa; an electrode formed on the two-dimensional electron gas mesa for exciting a plasma wave; a terahertz resonant cavity formed below the two-dimensional electron gas mesa, the terahertz resonant cavity having a total reflector on a bottom surface thereof; and a grating formed on the two-dimensional electron gas mesa for coupling a plasma wave pattern with a cavity mode of the terahertz resonant cavity to generate terahertz radiation.
Suzhou Institute Of Nano-tech And Nano-bionics (sinano), Chinese Academy Of Sciences


08/11/16
20160233377 

Phosphor in inorganic binder for led applications


A method for fabricating an led/phosphor structure is described where an array of blue light emitting diode (led) dies are mounted on a submount wafer. A phosphor powder is mixed with an organic polymer binder, such as an acrylate or nitrocellulose.
Koninklijke Philips N.v.


08/11/16
20160233335 

High selectivity nitride removal process based on selective polymer deposition


A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap.
Zeon Corporation


08/11/16
20160233102 

Fabrication of a silicon structure and deep silicon etch with profile control


A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided.
Lam Research Corporation


08/11/16
20160233100 

Selective deposition utilizing masks and directional plasma treatment


Methods for selectively depositing different materials at diffe ent locations on a substrate are provided. A selective deposition process may form different materials on different surfaces, e.g., different portions of the substrate, depending on the material properties of the underlying layer being deposited on on implantation processes may be used to modify materials disposed on the substrate.
Applied Materials, Inc.


08/11/16
20160233084 

Selectively lateral growth of silicon oxide thin film


Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups.
Applied Materials, Inc.


08/11/16
20160233061 

Heated air plasma treatment


The present disclosure includes atmospheric plasma systems and methods for plasma treating a surface. The plasma system may include a plasma probe configured to receive a source air that is at or above atmospheric pressure and discharge a plasma from a probe tip.
Ford Global Technologies, Llc


08/11/16
20160233059 

Methods and systems for generating plasma to clean objects


A system to generate plasma to clean at least one object, the apparatus comprising a microplate with an electrode support array comprising a plurality of matched pairs of elongated dielectric barrier members connected to a plurality of electrodes, with said dielectric barrier members of said matched pair being spaced at a pre-determined non-uniform gap, a variable time scale pulsed power source electrically coupled to said electrodes to provide electrical pulses and a plurality of electronic components to control polarity of said electrical pulses, such that said pulses produce electron streamers from opposing elongated dielectric barrier members of said plurality of matched pairs and charge on a surface of said dielectric barrier member is substantially evenly distributed.. .
Ionfield Holdings, Llc


08/11/16
20160233058 

Control of impedance of rf return path


A system for controlling an impedance of a radio frequency (rf) return path includes a matchbox further including a match circuitry. The system further includes an rf generator coupled to the matchbox to supply an rf supply signal to the matchbox via a first portion of an rf supply path.
Lam Research Corporation


08/11/16
20160233057 

Plasma processing apparatus and plasma processing method


In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on state of the time-modulated second radio-frequency power until an and of the on-state and maintains a matching state attained during the sampling effective period from after the end of the so-state until a next sampling effective period.. .
Hitachi High-technologies Corporation


08/11/16
20160233055 

Apparatus and metastable enhanced plasma ignition


Methods and apparatus for igniting a process plasma within a plasma chamber are provided. A quantity of metastable atoms generated within a metastable generation volume are provided along with an ignition gas to a plasma generation volume defined by a plasma chamber.
Mks Instruments Inc.


08/11/16
20160233047 

Plasma-based material modification with neutral beam


Systems and processes for plasma-based material modification of a work piece are provided. In an example process, a first plasma in a plasma source chamber is generated.
Advanced Ion Beam Technology, Inc.


08/11/16
20160232988 

Toroidal field coil for use in a fusion reactor


Disclosed herein is a toroidal field coil for generating a toroidal magnetic field in a nuclear fusion reactor comprising toroidal plasma chamber having a central column, the toroidal field coil comprising a plurality of windings passing through the central column and around the outside of the plasma chamber. Each winding includes a cable comprising a plurality of stacked hts tapes, each hts tape including one or more layers of a high temperature superconductor material.
Tokamak Energy Ltd


08/11/16
20160230281 

Dual-zone heater for plasma processing


A method and apparatus for a pedestal is provided. In one embodiment, the pedestal includes a body comprising a ceramic material having a flange, one or more heating elements embedded in the body, a first shaft coupled to the flange, and a second shaft coupled to the first shaft; wherein the second shaft includes a plurality of fluid channels formed therein that terminate in the second shaft..
Applied Materials, Inc.


08/11/16
20160230266 

Copper-gallium sputtering target


A ga-containing and cu-containing sputtering target has a ga content of from 30 to 68 at %. The sputtering target contains only cuga2 as ga-containing and cu-containing intermetallic phase or the proportion by volume of cuga2 is greater than the proportion by volume of cu9ga4.
Plansee Se


08/11/16
20160230240 

Grain-oriented electrical steel sheet and manufacturing same (as amended)


Provided is a grain-oriented electrical steel sheet including: a forsterite base film formed on a surface of the steel sheet; and an insulating tension coating formed on the base film, in which when ti intensity fx(ti), al intensity fx(al), and fe intensity fx(fe) obtained through quantitative analysis by performing fluorescent x-ray analysis on the surface of the steel sheet satisfy fx(ti)/fx(al)≧0.15 and fx(ti)/fx(fe)≧0.004, the frequency of crystal boundaries of secondary recrystallized grains in the direction orthogonal to the rolling direction is 20 grain boundaries/100 mm or less, the mean thickness of the forsterite base film t(fo) and the thickness of the insulating tension coating t(c) satisfies t(fo)/t(c)≧0.3, and magnetic domain refining treatment is performed by irradiation with a laser beam, plasma flame, or electron beam, a sufficient iron loss reducing effect is achieved in a range where coating detachment does not occur.. .
Jfe Steel Corporation


08/11/16
20160230231 

Genotyping tests and methods for evaluating plasma creatine kinase levels


The invention relates to genetic variants useful for evaluating creatine kinase levels in a subject and determining an nupper limit of normal (uln) ck level for a subject. Uln ck level is used in determining the pathological significance of measures of blood or plasma ck obtained from the subject.
Institut De Cardiologie De Montreal


08/11/16
20160230178 

A bacterial surrogate for testing of antimalarials: thya knockout, fola knockout, folp knockout, and folk knockout bacteria for testing of inhibition of antifolate pathway


In this invention, cell lines are created for enzyme inhibitory testing of inhibitors against plasmodium falciparum dhfr-ts and hppk-dhps. Provided the complementing dhfr-ts and hppk-dhps have sufficient activities to support growth of the surrogates in un-supplemented medium, the same surrogates could be used for screening inhibitors of targets against other parasite and pathogen species e.g.
National Science And Technology Development Agency


08/11/16
20160230044 

Modified conformal coatings with decreased sulfur solubility


Embodiments of the disclosure generally provide coating compositions and methods comprising poly(siloxane) (silicone) polymers and their modification. plasma fluorine addition (fluorination) improves the barrier properties of poly(siloxane) coatings by decreasing the corrosive permeant solubility and by slowing permeant diffusion through the coating.
International Business Machines Corporation


08/11/16
20160230019 

Metal hardmask composition and processes for forming fine patterns on semiconductor substrates


The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices..
Az Electronic Materials (luxembourg) S.a.r.l


08/11/16
20160229839 

Factor xia inhibitors


And pharmaceutical compositions comprising one or more said compounds, and methods for using said compounds for treating or preventing thromboses, embolisms, hypercoagulability or fibrotic changes. The compounds are selective factor xia inhibitors or dual inhibitors of factor xia and plasma kallikrein..

08/11/16
20160229199 

Printing apparatus, printing system, and printing method


A printing apparatus includes a plasma processor, a recording unit, and a heating unit. The plasma processor performs plasma processing on a processing target matter.
Ricoh Company, Ltd.


08/11/16
20160229029 

Optimized textured surfaces and methods of optimizing


Methods for treating texturized surfaces of sputter targets in order to improve adhesion and retention of deposited particles thereon. The target surfaces may first be texturized by a precursor texturizing method such as bead blasting, grit blasting, plasma spraying, or a twin-wire-arc spraying (twas) method.
Tosoh Smd, Inc.


08/11/16
20160228844 

Enhanced contact electrical discharge plasma reactor for liquid and gas processing


An electrical discharge plasma reactor system for treating a liquid, a gas, and/or a suspension. The reactor system includes a reactor chamber configured to hold the liquid and a gas, a discharge electrode disposed within the gas of the reactor chamber, a non-discharge electrode disposed within the liquid, a gas diffuser disposed within the liquid and configured to induce the generation of a layer of foam on the surface of the liquid in a plasma-contact region, and a power supply connected to the discharge electrode and configured to induce the discharge electrode to generate plasma in the plasma-contact region..
Clarkson University


08/11/16
20160228840 

Processing microtitre plates for covalent immobilization chemistries


Disclosed herein is a method of: treating an organic polymer with an electron beam-generated plasma; exposing the treated polymer to air or an oxygen- and hydrogen-containing gas, generating hydroxyl groups on the surface of the polymer; reacting the surface with an organosilane compound having a chloro, fluoro, or alkoxy group and a functional or reactive group that is less reactive with the surface than the chloro, fluoro, or alkoxy group; and covalently immobilizing a biomolecule to the functional or reactive group or a reaction product thereof.. .
The Governmnet Of The United States Of America, As Represented By The Secretary Of The Navy


08/11/16
20160228592 

Plasma vapor chamber and antimicrobial applications thereof


Exemplary apparatuses and methods of killing or deactivating bacteria are disclosed herein. An exemplary apparatus for killing or deactivating bacteria includes a plasma vapor chamber.
Ep Technologies Llc


08/11/16
20160228547 

Chimeric antigen receptor targeting of tumor endothelium


Disclosed are methods, protocols, and compositions of matter related to utilization of chimeric antigen receptor (car) expressing cells for the targeting of tumor endothelium utilizing chimeric antigen receptor expressing stem cells. In one embodiment tumor endothelium specific antigens are utilized as targets of the antigen binding domain of a car, which is attached to an extracellular hinge domain, a domain that transverses the t cell membrane and an intracellular domain associated with t cell signaling.
Batu Biologics, Inc.


08/11/16
20160228468 

Method for reducing the inflammatory activity of a stem cell transplant and use thereof


The disclosure is in the field of cell therapy, more in particular, stem cell transplantation therapy. The disclosure provides methods and compositions for improving the efficacy of stem cell transplantation therapy by reducing the inflammatory activity of a stem cell transplant.
Neuroplast Beheer B.v.


08/11/16
20160228390 

Compositions and methods for increasing the metabolic lifetime of dextromethorphan and related pharmacodynamic effects


This disclosure relates to methods of increasing dextromethorphan plasma levels comprising co-administering hydroxybupropion, or a prodrug thereof, and dextromethorphan to a human being in need of treatment with dextromethorphan. Dosage forms, drug delivery systems, and methods related to dextromethorphan and hydroxybupropion or a prodrug of bupropion are also disclosed..
Antecip Bioventures Ii Llc






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