|| List of recent Plasma-related patents
| Tube with modified inner wall surface using plasma and a preparation method thereof|
The present invention relates to a preparation method of a tube and a transplantable polymer tube prepared by such method, which includes modifying the inner surface of a tube using plasma. A preparation method of a tube may include preparing a tube, modifying the inner surface of the tube using microplasma so as to have reactivity, forming a thin film layer on the modified surface of the tube to prevent aging or impart adhesiveness, and modifying the surface of the thin film layer using microplasma so as to enhance cell adhesion thereon..
| System and method for sinus surgery|
A method for treating a sinus cavity is provided. The method includes the steps of inserting a plasma applicator into a sinus cavity defined in a bone mass, positioning the plasma applicator adjacent a tissue formation, generating a selectively reactive plasma effluent at the plasma applicator and directing the selectively reactive plasma effluent at the tissue formation.
| Electrosurgical methods and systems|
Electrosurgical methods and systems. At least some of the illustrative embodiments are methods including maintaining plasma proximate to an active electrode in a first energy range, and a second energy range.
| Modulation of structured polypeptide specificity|
The invention describes peptide ligands specific for human plasma kallikrein.. .
| Methods and compositions for diagnosis of colorectal cancer|
Methods and compositions are provided for diagnosing colorectal cancer in a mammalian subject, preferably in a serum or plasma sample of a human subject. The methods and compositions enable the detection or measurement in the sample or from a protein level profile generated from the sample, the protein level of one or more specified biomarkers.
| Method for etching high-k dielectric using pulsed bias power|
A method of patterning a gate stack on a substrate is described. The method includes preparing a gate stack on a substrate, wherein the gate stack includes a high-k layer and a gate layer formed on the high-k layer.
| Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor|
Embodiments of the present disclosure relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present disclosure provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber.
| Plasma processing apparatus and plasma processing method|
Advantages of a conventional upper electrode dc power applying manner can be maintained and disadvantages of the upper electrode dc power applying manner can be removed. In a capacitively coupled plasma processing apparatus, a first high frequency power rfh for plasma generation and a second high frequency power rfl for ion attraction are overlapped with each other to be applied to a susceptor (lower electrode) 16.
| Methods for fabricating integrated circuits utilizing silicon nitride layers|
A method of fabricating an integrated circuit includes the steps of providing a semiconductor substrate comprising a semiconductor device disposed thereon and depositing a first silicon nitride layer over the semiconductor substrate and over the semiconductor device using a first deposition process. The first deposition process is a plasma-enhanced chemical vapor deposition (pecvd) process that operates over a plurality of cycles, each cycle having a first time interval and a second time interval.
| Selective titanium nitride removal|
Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. Silicon oxide, silicon carbon nitride and low-k dielectric films).
| Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer|
Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. By exposing a metal oxide surface to a remote plasma, the metal oxide surface on a substrate can be reduced to pure metal and the metal reflowed.
| Methods for reducing metal oxide surfaces to modified metal surfaces using a gaseous reducing environment|
Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. Metal oxide surfaces are reduced to form a film integrated with a metal seed layer on a substrate by exposing the metal oxide surfaces to a reducing gas atmosphere comprising radicals of a reducing gas species.
| Techniques and apparatus for high rate hydrogen implantation and co-implantion|
An apparatus for hydrogen and helium implantation is disclosed. The apparatus includes a plasma source system to generate helium ions and hydrogen molecular ions comprising h3+ ions.
| Plasma curing of pecvd hmdso film for oled applications|
Methods for forming an oled device are described. An encapsulation layer having a buffer layer sandwiched between barrier layers is deposited over an oled structure.
| Method for fabricating a patterned substrate for a cell culture, a patterned substrate for cell culture, and a cell chip|
The present invention relates to a method for fabricating a patterned substrate for a cell culture, comprising the steps of: (1) preparing a substrate; (2) depositing a plasma polymer layer by using a precursor material on the substrate; (3) placing a shadow mask having a predetermined pattern on the plasma polymer layer; (4) treating the substrate, having the shadow mask placed thereon, with a reactive gas using plasma; and (5) removing the shadow mask from the substrate, and a patterned substrate for the cell culture fabricated thereby. The invention also relates to a method for a cell culture with a pattern, comprising the step of culturing cells on the patterned substrate for the cell culture, and a patterned cell chip, and a method of screening a material having an activity of inducing or promoting angiogenesis using the patterned cell chip..
| Kit for determination of thymidine kinase activity and use thereof|
An assay kit for determination of thymidine kinase (tk) activity in a biological sample, such as blood, serum, plasma, cerebral spinal fluid (csf), pleural fluid, ascites, tissues, cells and extracts thereof, is described. The assay kit can used in a method that comprises contacting, in a buffer, a basic reaction mixture comprising: solid surface-attached primer and/or template, a modified deoxy nucleoside, such as bromodeoxyuridine, iododeoxyuridine, fluorodeoxyuridine or vinyldexoythymidine as a kinase enzyme substrate, a phosphate donor, a nucleotide polymerizing enzyme, and a kinase enzyme source devoid of tk activity, such as a yeast extract, with the biological sample.
| Multi-metal particle generator and method|
Multi-metal particles, apparatuses and method of making same are provided. Specifically, the multi-metal particles are of nanometer dimensions and are prepared by spatially arranged electrodes configured to generate and maintain a plasma cloud..
| Polymer article having a thin coating formed on at least one of its sides by plasma and method for producing such an article|
Polymer article having a thin coating on at least one of its side, the coating including a first coating of sioxcyhz which is a plasma polymerized tetramethylsilane deposited on the surface on the polymer article, the x value being between 0 and 1.7, the y value being between 0.5 and 0.8, the z value being between 0.35 and 0.6 for the first sioxcyhz coating and a second coating of sioxcyhz which is a plasma polymerized tetramethylsilane deposited on the surface on the first coating, the x value being between 1.7 and 1.99, the y value being between 0.2 and 0.7, the z value being between 0.2 and 0.35 for the second sioxcyhz coating and in that the thickness of the first coating is from about 1 nanometer to about 15 nanometers and in that the thickness of the second coating is from about 10 nanometers to about 100 nanometers.. .
| Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition|
Production of bulk quantities of graphene for commercial ventures has proven difficult due to scalability issues in certain instances. Plasma-enhanced chemical vapor deposition of graphene can address at least some of these issues.
| Low energy plasma coating|
A method of coating an aluminum alloy or magnesium alloy component, including cleaning and drying surfaces of the component to be coated; suspending a powdered coating material in a carrier gas and feeding the suspended powdered coating material through a plasma torch in a flowing gas; heating the coating material in the plasma torch to a molten or semi-molten state using a nominal power below 25 kw; and depositing the coating material with the plasma torch directly on the surfaces to be coated. The component may be made of a magnesium alloy containing at one or more of zinc, cerium and zirconium, or of an aluminum alloy containing one or more of magnesium, silicon, copper and chromium.
| Use of whey protein micelles for improving insulin profile in diabetic patients|
The present invention relates to whey protein micelles for use in the treatment and/or prevention of a disorder linked to an increase in plasma postprandial insulin and/or plasma postprandial glucagon concentration in a subject. The invention relates also to a non-therapeutic use of whey protein micelles to decrease plasma postprandial insulin and/or glucagon concentration in healthy subjects..
| Method for extracorporeal elimination of one or more components from blood|
A method for extracorporeal elimination of one or more components from blood where whole blood or blood plasma is added to a blood treatment device containing an adsorbent which binds the one or more components is disclosed. The adsorbent comprises at least one matrix to which at least one ligand having specific binding affinity to said one or more component is covalently bound.
| Cns antigen-specific b cell, t cell and antibody assays and their uses in diagnosis and treatment of multiple sclerosis|
Embodiments of this invention include methods for detecting in vitro the presence in peripheral blood mononuclear cells (pbmcs), and in serum or plasma, of antibodies reactive to and of lymphocytes that are responsive to cns antigens associated with multiple sclerosis (ms). These cns antigens include, but are not limited to whole brain lysate and the myelin antigens myelin basic protein (mbp), myelin oligodendrocyte glycoprotein (mog), mog peptides (mogps), proteolipid protein (plp), and plp peptides (plpps).
| Plasma sterilization apparatus and plasma sterilization method|
Disclosed is a plasma sterilization apparatus including a chamber including a sterilization target, a vaporizer heating air, a vacuum unit discharging moisture and cold air from the chamber to the outside, an air supply unit injecting heated air into the chamber, and a control unit controlling the air supply unit to inject air heated by the vaporizer into the chamber, controlling the vacuum unit to discharge air to the outside until an internal pressure of the chamber becomes a firstly set pressure, and controlling the air supply unit to inject heated air into the chamber until the internal pressure of the chamber becomes a secondly set pressure.. .
| Method and arrangement for generating a jet of fluid, method and system for transforming the jet into a plasma, and uses of said system|
A method and apparatus for generating a pulsed jet of fluid, and transforming the jet into a plasma. The method includes using a high-pressure rapid solenoid valve, and a pipe mounted on an outlet opening of the solenoid valve to produce a pulsed fluid jet which is sub-millimetric in size, and the atomic density of which is more than 1020 cm−3..
| Remote plasma lamp pole system and method for installing the same|
A remote plasma lamp pole system includes a lamp pole, a remote plasma lamp mounted inside a lower portion of the lamp pole, and a reflector mounted inside an upper portion of the lamp pole above the plasma lamp for reflecting light emitting therefrom towards an area to be illuminated. A lens is mounted in front of the first reflector for refracting light therefrom.
| Power supply device for plasma processing|
A power supply device for plasma processing, wherein electric arcs may occur, comprises a power supply circuit for generating a voltage across output terminals, and a first switch connected between the power supply circuit and one of the output terminals. According to a first aspect the power supply device comprises a recovery energy circuit connected to the output terminals and to the power supply circuit.
| Radiation source|
A radiation source having a fuel stream generator (110) that generates and directs a fuel stream (102) along a trajectory towards a plasma formation location (104). A pre-pulse laser radiation assembly directs a first beam of laser radiation (100) at the fuel stream at the plasma formation location to generate a modified fuel target (106).
| Method and apparatus of diagnosing plasma in plasma space|
To diagnose plasma in a plasma space, a plurality of floating probes are installed at a plurality of points, respectively, in a plasma space. An electron density ratio at each of the points is calculated by measuring a first probe current of each of the floating probes, the probe current including a dc component.
| Plasma generator|
An arrangement for generating plasma, the arrangement comprising a primary plasma source (1) arranged for generating plasma, a hollow guiding body (11) arranged for guiding at least a portion of the plasma generated by the primary plasma source to a secondary plasma source (25), and an outlet (14) for emitting at least a portion of the atomic radicals produced by the plasma from the arrangement.. .
| Thin film fabrication of rubber material with piezoelectric characteristics|
The present invention is related to a thin film fabrication of a rubber material with piezoelectric characteristics and a manufacturing method thereof. The present invention is developed by utilizing polymer casting, multilayer stacking, surface coating, and micro plasma discharge processes.
| Semiconductor device with advanced pad structure resistant to plasma damage and method for forming the same|
A connective structure for bonding semiconductor devices and methods for forming the same are provided. The bonding structure includes an alpad structure, i.e., a thick aluminum-containing connective pad, and a substructure beneath the aluminum-containing pad that includes at least a pre-metal layer and a barrier layer.
| Multi-plasma nitridation process for a gate dielectric|
A gate dielectric can be formed by depositing a first silicon oxide material by a first atomic layer deposition process. The thickness of the first silicon oxide material is selected to correspond to at least 10 deposition cycles of the first atomic layer deposition process.
| Backside cmos compatible biofet with no plasma induced damage|
The present disclosure provides a bio-field effect transistor (biofet) device and methods of fabricating a biofet and a biofet device. The method includes forming a biofet using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (cmos) process.
| System for controlling placement of nanoparticles, and methods of using same|
The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening.
| Method of laser welding a nuclear fuel rod|
A method of welding a fuel rod includes the following steps. An end plug and a cladding tube of the fuel rod are brought together to abut each other, and welded by applying a laser beam directed to a welding zone to melt material of the end plug and the cladding tube.
| Etching apparatus and etching method|
An apparatus for an etching process includes a chamber, a plasma generator disposed in the chamber, a stacked structure disposed in the chamber to support a substrate thereon and including an electrode plate and an insulation coating layer on the electrode plate, electrode rods inserted into through holes of the stacked structure to penetrate through the stacked structure, directly contacting the substrate and spaced apart from sidewalls of the through holes of the stacked structure, at least one dc pulse generator generating a dc pulse to the electrode plate and the electrode rods, first connection lines connecting the dc pulse generator to the electrode rods, and at least one second connection line connecting the dc pulse generator to a lower portion of the electrode plate.. .
| Microwave waveguide apparatus, plasma processing apparatus and plasma processing method|
A microwave waveguide apparatus for generating plasma includes a waveguide which has first and second ends and propagates microwave from input end such that the microwave propagates from the first end to the second end, a circulator device having a first port, a second port coupled to the first end, and a third port coupled to the second end, the circulator device being structured such that the microwave is received at the first port, propagates from the second port to the first end, is received at the third port from the second end and is returned toward the input end, and a matching device which is interposed between the input end and the circulator device and reflects part of the microwave received at the third port and returned toward the input end to the first port. The waveguide has a slot-hole extending along the microwave propagation direction in the waveguide..
| Pulsed remote plasma method and system|
A system and method for providing pulsed excited species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as reactive species from the remote plasma unit are pulsed to the reaction chamber..
| Method and systems for in-situ formation of intermediate reactive species|
A system and method for providing intermediate reactive species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as intermediate reactive species from the remote plasma unit are provided to the reaction chamber..
| Method of etching metal layer|
In a method of etching a metal layer of an object to be processed, the metal layer is etched by ion sputtering etching while forming a protective film containing carbon on a surface of a mask of the object. The object is exposed to an oxygen plasma after etching the metal layer.
| Film deposition apparatus with low plasma damage and low processing temperature|
A deposition system includes a magnetron sputter deposition source that includes a backing frame that includes a window and a closed loop around the window. The backing frame includes inside surfaces towards the window, one or more sputtering targets mounted on inside surfaces of the backing frame, and one or more magnets mounted on outside surfaces of the backing frame.
| Ion beam etching method of magnetic film and ion beam etching apparatus|
To restrict generation of particles or deterioration in process reproducibility caused by a large amount or carbon polymers generated in a plasma generation portion in an ion beam etching apparatus when a magnetic film on a substrate is etched with reactive ion beam etching in manufacturing a magnetic device. In an ion beam etching apparatus, first carbon-containing gas is introduced by a first gas introduction part into a plasma generation portion, and second carbon-containing gas is additionally introduced by a second gas introduction part into a substrate processing space to perform reactive ion beam etching, thereby etching a magnetic material at preferable selection ratio and etching rate while restricting carbon polymers from being formed in the plasma generation portion..
| Physical vapor deposition rf plasma shield deposit control|
Methods and apparatus for processing a substrate in a physical vapor deposition (pvd) chamber are provided herein. In some embodiments, a process kit shield used in a substrate processing chamber may include a shield body having an inner surface and an outer surface, a process kit shield impedance match device coupled between the shield body and ground, wherein the process kit shield impedance match device is configured to adjust a bias voltage of the process kit shield, a cavity formed on the outer surface of the shield body, and one or more magnets disposed within the cavity..
| Plasma processing apparatus|
Disclosed is a plasma processing apparatus including: a processing container having a cylindrical columnar shape centering around a predetermined axis and defining a processing space therein; a plurality of columnar dielectric bodies installed at a top side of the processing space; a microwave generator configured to generate microwaves; a waveguide unit configured to connect the microwave generator and the plurality of columnar dielectric bodies; and a stage installed within the processing container to intersect with the predetermined axis. The plurality of columnar dielectric bodies are arranged at predetermined intervals along a circumferential direction around the predetermined axis within the processing space.
| Substrate supporter and substrate processing apparatus including the same|
Provided is a substrate processing apparatus including a chamber provided with a reaction space and formed with an exhaustion opening in a center of a bottom, a substrate supporter provided in the chamber and supporting a substrate, a gas injection assembly provided to be opposite to the substrate supporter, injecting a processing gas, and generating plasma thereof, and an exhauster connected to the exhaustion opening and provided below the chamber to exhaust an inside of the chamber, in which the substrate supporter includes a substrate support supporting the substrate and a plurality of supporting posts supporting an outside of the substrate support disposing the exhausting opening therebetween.. .
| Method and system for die compensation and restoration using high-velocity oxy-fuel thermal spray coating and plasma ion nitriding|
A method and system for die compensation and restoration uses high-velocity oxy-fuel (hvof) thermal spray coating and plasma ion nitriding to compensate for a particular part (damaged part) of a press die that causes formation of fine curves at a door of a vehicle to restore it to its original state. A coating thickness quantification technique may precisely compensate for the damaged part of the die that causes formation of the fine curves at the door of the vehicle in a circular form using hvof thermal spray coating.
|Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus|
An article is described including an article surface, a primer coating or layer of siox, sioxcy or sinxcy applied to the article surface, and a deposit of lubricant applied to the primer coating or layer. The primer coating or layer of siox, sioxcy or sinxcy is applied by chemical vapor deposition of a polysiloxane or polysilazane precursor in the presence of oxygen.
|Hybrid polypeptides with selectable properties|
The present invention relates generally to novel, selectable hybrid polypeptides useful as agents for the treatment and prevention of metabolic diseases and disorders which can be alleviated by control plasma glucose levels, insulin levels, and/or insulin secretion, such as diabetes and diabetes-related conditions. Such conditions and disorders include, but are not limited to, hypertension, dyslipidemia, cardiovascular disease, eating disorders, insulin-resistance, obesity, and diabetes mellitus of any kind, including type 1, type 2, and gestational diabetes..
|Antibodies with modified isoelectric points|
The invention relates generally to compositions and methods for altering the isoelectric point of an antibody, and in some cases, resulting in improved plasma pharmacokinetics, e.g. Increased serum half-life in vivo..
|Discovery of a somatic mutation in myd88 gene in lymphoplasmacytic lymphoma|
Diagnostic assays for facilitating the diagnosis of lymphoplasmacytic lymphoma (lpl) are provided. The method comprises assessing a biological sample of the subject for the presence of a mutation at position 38182641 in chromosome 3p22.2, wherein presence of the mutation is indicative that the subject has lpl.
|Whey protein micelles against muscle atrophy and sarcopenia|
The present invention relates to whey protein micelles for use in the treatment and/or prevention of a condition linked to a reduced concentration of plasma amino acids in a patient. A further aspect of the invention is a meal replacement comprising whey protein micelles..
|Wet chemical and plasma methods of forming stable ptpd catalysts|
A nano-particle comprising: an interior region comprising a mixed-metal oxide; and an exterior surface comprising a pure metal. In some embodiments, the mixed-metal oxide comprises aluminum oxide and a metallic pinning agent, such as palladium, copper, molybdenum, or cobalt.
|Enhanced etching processes using remote plasma sources|
Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents.
|Line width roughness improvement with noble gas plasma|
A method for forming lines in an etch layer on a substrate may comprise providing a ultra-violet (uv) producing gas to a vacuum chamber having a photoresist mask, ionizing the uv producing gas to produce uv rays to irradiate the photoresist mask, and etching the lines into the etch layer through the photoresist mask.. .
|Method of manufacturing photoelectric conversion device|
The present invention provides a method of manufacturing a photoelectric conversion device for forming a semiconductor layer on a substrate by the plasma cvd method. The method includes a first plasma processing step in which a processing temperature reaches a first temperature; a second plasma processing step in which the processing temperature reaches a second temperature; a temperature regulating step of lowering the processing temperature to a third temperature lower than the first temperature and the second temperature after the first plasma processing step and before the second plasma processing step; and a temperature raising step of raising the processing temperature from the third temperature to the second temperature.
|Patterning of magnetic tunnel junction (mtj) film stacks|
Chemical modification of non-volatile magnetic random access memory (mram) magnetic tunnel junctions (mtjs) for film stack etching is described. In an example, a method of etching a mtj film stack includes modifying one or more layers of the mtj film stack with a phosphorous trifluoride (pf3) source to provide modified regions of the mtj film stack.
|Methods for diagnosing and identifying modulators of membrane potentials in bipolar disorder and attention deficit hyperactivity disorder|
The present invention provides methods to modulate key elements along the dag signaling pathway as well as a diagnostic assay, device and methods of using the same to diagnose bipolar disorder (bd) and attention deficit hyperactivity disorder (adhd). Methods to identify diagnostic markers and drug targets for bd and adhd.
|Highly sensitive cell-based assay to detect the presence of active botulinum neurotoxin serotype-a|
The present specification discloses methods for detecting extremely low amounts of botulinum neurotoxin serotype a in samples, including complex matrices like blood, plasma, and serum.. .
|Plasma treatment of substrates|
An apparatus for plasma treating a substrate comprises a high voltage source of frequency 3 khz to 30 khz connected to at least one needle electrode (11) positioned within a channel (16) inside a dielectric housing (14) having an inlet for process gas and an outlet. The channel (16) has an entry (16a) which forms the said inlet for process gas and an exit (16e) into the dielectric housing arranged so that process gas flows from the inlet through the channel (16) past the electrode (11) to the outlet of the dielectric housing.
|Screen stencil and method for coating screen stencils|
A stencil body of a screen stencil body has a surface coating made up of hydrocarbon-based, organic precursor molecules. A plasma-coating method is used to coat the screen stencil, wherein a layer of hydrocarbon-based, organic precursor molecules is deposited on the surface of the stencil body of the screen stencil..
|Installation and method for the functionalization of particulate and powdered products|
The present invention is related to a continuous method for the functionalization of a pulverulent product in a plasma reactor comprising the steps of:—generating a plasma in a vertical reactor;—bringing the pulverulent product in contact with said plasma by letting said particles fall by gravity from top to bottom trough said reactor. The present invention also discloses an instalation for performing the functionalization method..
|Predictors of response to immunotherapy|
The invention is directed to a method to predict individuals who are likely to respond to immunotherapy by detecting enhanced levels of antibodies in the plasma or serum wherein the antibodies are characteristic of the response or non-response of pretested populations of subjects.. .
The present invention relates to a sampler which is capable of rapidly and easily separating blood corpuscles from blood, being operated conveniently, and directly using extracted plasma. According to one embodiment of the present invention, a sampler includes a chamber and a membrane guide.
|System for producing graphene in a magnetic field|
An improved system for generating graphene involves producing a plurality of ionized carbon atoms in a plasma generation chamber and providing the plurality of ionized carbon atoms to a graphene generation chamber having a magnetic structure. The graphene generation chamber generates graphene from said plurality of ionized carbon atoms over said magnetic structure such that said graphene floats over said magnetic structure due to said graphene being diamagnetic.
|Plasma generation device|
A plasma generation device 20 includes a passage formation member 41 arranged upstream of a purification catalyst 31 in an exhaust passage 30 and formed with an internal passage 40 that the exhaust gas passes through, and a plasma generation part 29 that generates plasma in the internal passage 40. The internal passage 40 is located in the vicinity of or abutting contact with a purification catalyst 31 at an outlet part of the internal passage so that the exhaust gas flowing through the internal passage 40 causes the plasma generated by the plasma generation part 29 to blow out from an outlet 43 of the internal passage 40 and to reach the purification catalyst..