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Plasma patents



      
           
This page is updated frequently with new Plasma-related patent applications. Subscribe to the Plasma RSS feed to automatically get the update: related Plasma RSS feeds. RSS updates for this page: Plasma RSS RSS


Plasma directed electron beam wound care system apparatus and method

Plasma directed electron beam wound care system apparatus and method

In vitro diagnostic devices for nervous system injury and other neural disorders

In vitro diagnostic devices for nervous system injury and other neural disorders

In vitro diagnostic devices for nervous system injury and other neural disorders

Patterning method

Date/App# patent app List of recent Plasma-related patents
10/09/14
20140303552
 Apparatus and method for controlling insulin infusion with state variable feedback patent thumbnailApparatus and method for controlling insulin infusion with state variable feedback
An infusion system, which may be a closed loop infusion system or “semi-closed-loop” system, uses state variable feedback to control the rate that fluid is infused into the body of a user. The closed loop infusion system includes a sensor system, a controller, and a delivery system.
10/09/14
20140303549
 Plasma directed electron beam wound care system apparatus and method patent thumbnailPlasma directed electron beam wound care system apparatus and method
A plasma generating device that utilizes a cold plasma to contain and direct a stream of electrons with a hand held nozzle to enhance healing of wounds and skin surface abnormalities, and to kill pathogens on skin surfaces in humans and animals wounds, abnormalities and pathogens.. .
10/09/14
20140303041
 In vitro diagnostic devices for nervous system injury and other neural disorders patent thumbnailIn vitro diagnostic devices for nervous system injury and other neural disorders
The present invention relates to an exemplary in vitro diagnostic (ivd) device used to detect the presence of and/or severity of neural injuries or neuronal disorders in a subject. The ivd device relies on an immunoassay which identifies biomarkers that are diagnostic of neural injury and/or neuronal disorders in a biological sample, such as whole blood, plasma, serum, cerebrospinal fluid (csf).
10/09/14
20140303037
 Patterning method patent thumbnailPatterning method
A method of patterning a surface of a substrate comprising: (a) applying a coating to the surface to form a coated surface, and (b) treating the coated surface with a patterned microplasma comprising a plurality of localised microplasma discharges such that localised regions of the coated surface are selectively exposed to the localised microplasma discharges to form exposed localised regions and unexposed regions that have not been substantially exposed to a microplasma discharge; wherein the coating at the exposed localised regions is modified by the patterned microplasma and the coating at the unexposed regions is substantially unmodified to form a patterned surface on the substrate.. .
10/09/14
20140303008
 Colorectal cancer associated circulating nucleic acid biomarkers patent thumbnailColorectal cancer associated circulating nucleic acid biomarkers
The invention provides methods and reagents for diagnosing colorectal cancer that are based on the detection of biomarkers in the circulating nucleic acids from a patient to be evaluated. In some embodiments, the cna biomarkers are polynucleotide fragments, e.g., dna fragments, that are present at an elevated level in blood, e.g., in a serum or plasma sample, of a colorectal cancer patient in comparison to the level in blood, e.g., a serum or plasma sample, obtained from a normal individual who does not have colorectal cancer..
10/09/14
20140302976
 Centrifuge patent thumbnailCentrifuge
Centrifuges are useful to, among other things, remove red blood cells from whole blood and retain platelets and other factors in a reduced volume of plasma. Platelet rich plasma (prp) and or platelet poor plasma (ppp) can be obtained rapidly and is ready for immediate injection into the host.
10/09/14
20140302690
 Chemical linkers to impart improved mechanical strength to flowable films patent thumbnailChemical linkers to impart improved mechanical strength to flowable films
Methods forming a low-κ dielectric material on a substrate are described. The methods may include the steps of producing a radical precursor by flowing an unexcited precursor into a remote plasma region, and reacting the radical precursor with a gas-phase silicon precursor to deposit a flowable film on the substrate.
10/09/14
20140302689
 Methods and apparatus for dielectric deposition patent thumbnailMethods and apparatus for dielectric deposition
Methods for depositing flowable dielectric films are provided. In some embodiments, the methods involve introducing a silicon-containing precursor to a deposition chamber wherein the precursor is characterized by having a partial pressure:vapor pressure ratio between 0.01 and 1.
10/09/14
20140302688
 Flowable silicon-carbon-oxygen layers for semiconductor processing patent thumbnailFlowable silicon-carbon-oxygen layers for semiconductor processing
Methods are described for forming a dielectric layer on a patterned substrate. The methods may include combining a silicon-and-carbon-containing precursor and a radical oxygen precursor in a plasma free substrate processing region within a chemical vapor deposition chamber.
10/09/14
20140302686
 Apparatus and method for conformal treatment of dielectric films using inductively coupled plasma patent thumbnailApparatus and method for conformal treatment of dielectric films using inductively coupled plasma
Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer..
10/09/14
20140302684
Etching method and apparatus
An etching method and apparatus for etching a silicon oxide film selectively with respect to a silicon nitride film formed on a substrate are provided. A processing gas containing a plasma excitation gas and a chf-based gas is introduced into a processing chamber such that a flow rate ratio of the chf-based gas to the plasma excitation gas is 1/15 or higher.
10/09/14
20140302682
Method and apparatus for plasma processing
The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.. .
10/09/14
20140302681
Internal plasma grid for semiconductor fabrication
The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers.
10/09/14
20140302680
Internal plasma grid for semiconductor fabrication
The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers.
10/09/14
20140302678
Internal plasma grid applications for semiconductor fabrication
The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers.
10/09/14
20140302666
Pulsed gas plasma doping method and apparatus
A method and apparatus for doping a surface of a substrate with a dopant, with the dopant being for example phosphine or arsine. The doping is performed with a plasma formed primarily of an inert gas such as helium or argon, with a low concentration of the dopant.
10/09/14
20140302617
Sample collection system and method for use thereof
A sample collection system capable of collecting, storing and dispensing a liquid sample is disclosed. The collection system includes a collector composed of a material which has the unique ability to express constituents of interest at levels which are much more concentrated than their levels in the fluid samples from which they are expressed, where the expressed highly concentrated sample can then be used with modern rapid screening/testing protocols, such as solid phase assays, to test for the constituents of interest.
10/09/14
20140302540
Blood sample assay method
The invention provides an enzymatic method for measuring the concentration of one or more analytes in the plasma portion of a blood derived sample, containing a first and a second component, where said second component interferes with the measurement of said first component. The method includes: i) diluting the sample with a reagent mixture; ii) substantially removing blood cells; iii) using a reagent which serves to temporarily prevent reaction of the second component, to generate a blocked second component; iv) causing the selective reaction of a constituent of each analyte to directly or indirectly generate detectable reaction products, where one of the analytes is the first component; v) monitoring the detectable reaction product or products; vi) relating an amount of the detectable product or products and/or a rate of formation of the detectable product or products to the concentration of each analyte, where the concentration of at least the first component is related to a corresponding detectable reaction product by means of estimating an un-measurable (fictive) endpoint.
10/09/14
20140302506
Methods and kits for selectively amplifying, detecting or quantifying target dna with specific end sequences
Disclosed herein are methods and kits for selectively amplifying, detecting or quantifying a dna fragment with a specific end sequence, especially generated following restriction enzyme digestion. This method can be used, for example, to detect a hypomethylated dna fragment.
10/09/14
20140302256
High impedance rf filter for heater with impedance tuning device
Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (rf) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an rf filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground.
10/09/14
20140302254
Plasma cleaning method
A plasma cleaning method is disclosed, the method includes the steps of performing a remote plasma cleaning; performing an in-situ radio-frequency nitrogen plasma cleaning; and depositing a seasoning film, wherein a reactant gas introduced in depositing the seasoning film does not include any nitrogen-containing gas. Advantageously, the combined use of the remote plasma cleaning and in-situ rf nitrogen plasma cleaning processes, as well as the non-use of any nitrogen-containing gas during the deposition of the seasoning film, can together greatly improve the conventional wafer backside metal contamination problem..
10/09/14
20140302100
Methods and biomarkers for analysis of colorectal cancer
The present invention relates to methods and biomarkers (e.g., gene expression biomarkers) for detection of colorectal cancer in biological samples (e.g., tissue samples, biopsy samples, stool samples, blood samples, plasma samples, serum samples). In some embodiments, methods and biomarkers of the present invention find use in detection of colon cancer and in providing a prognosis to colorectal cancer patients..
10/09/14
20140302068
Microrna biomarkers for diagnosing parkinson's disease
The identification, development and validation of plasma-based circulating microrna (mirnas) biomarkers useful in determining if a subject has parkinson's disease (pd), is at increased risk of developing pd, or has pd that is progressing or is in remission are presented.. .
10/09/14
20140302048
Plasma kallikrein binding proteins
Plasma kallikrein binding proteins and methods of using such proteins are described.. .
10/09/14
20140302019
Blood plasma biomarkers for bevacizumab combination therapies for treatment of pancreatic cancer
The present invention provides methods for improving the treatment effect of a chemotherapy regimen of a patient suffering from pancreatic cancer, in particular metastatic pancreatic cancer by adding bevacizumab (avastin®) to a chemotherapy regimen by determining the expression level, in particular the blood plasma expression level, of one or more of vegfa, vegfr2 and plgf relative to control levels of patients diagnosed with pancreatic cancer, in particular metastatic pancreatic cancer. In particular, the present invention provides methods of improving the treatment effect, wherein the treatment effect is the overall survival and/or progression-free survival of the patient.
10/09/14
20140301952
Measurement of body fluid volumes
The present invention relates generally to measurement of body fluid volumes in an animal subject. The body fluid volumes of interest include extracellular fluid volume (ecfv), total vascular plasma volume (tvpv) and interstitial fluid volume (ifv).
10/09/14
20140301910
Apparatus for preparing silicon nanoparticle using icp
Disclosed is an apparatus for preparing silicon nanoparticles. The apparatus includes a corona discharge section charging silicon nanoparticles to exhibit unipolarity in order to prevent agglomeration of the silicon nanoparticles after the silicon nanoparticles are generated from an injected gas by plasma reaction of an inductively coupled plasma (icp) coil.
10/09/14
20140301519
Heating plasma for fusion power using magnetic field oscillation
In one embodiment, a fusion reactor includes two internal magnetic coils suspended within an enclosure, a center magnetic coil coaxial with the two internal magnetic coils and located proximate to a midpoint of the enclosure, a plurality of encapsulating magnetic coils coaxial with the internal magnetic coils, and two mirror magnetic coil coaxial with the internal magnetic coils. The fusion reactor is configured to vary electrical currents supplied to the magnetic coils to heat the plasma confined within the magnetic wall..
10/09/14
20140301518
Magnetic field plasma confinement for compact fusion power
In one embodiment, a fusion reactor includes a plurality of internal magnetic coils suspended within an enclosure, one or more center magnetic coils coaxial with the plurality of internal magnetic coils, a plurality of encapsulating magnetic coils coaxial with the internal magnetic coils, and a plurality of mirror magnetic coils coaxial with the internal magnetic coils. The encapsulating magnetic coils maintain a magnetic wall that prevents plasma within the enclosure from expanding..
10/09/14
20140301517
Active cooling of structures immersed in plasma
A fusion reactor includes an enclosure having a first end, a second end, and a midpoint substantially equidistant between the first and second ends of the enclosure. The fusion reactor includes two internal magnetic coils suspended within the enclosure and positioned on opposite sides of the midpoint of the enclosure, one or more encapsulating magnetic coils positioned on each side of the midpoint of the enclosure, two mirror magnetic coils positioned on opposite sides of the midpoint of the enclosure, and one or more cooling lines within each of the internal magnetic coils.
10/09/14
20140301423
Method for operating arc furnace
A material is melted in an arc furnace by a plasma arc produced by at least one electrode. The plasma arc is regulated by one or more additional substances which influence the plasma composition introduced into the plasma, increasing the efficiency and output of the arc furnace..
10/09/14
20140301011
Plasma gap detonator with novel initiation scheme
Disclosed is a method and apparatus for use in initiating explosives used in application including well perforating systems. The initiator uses an air gap separating an electrically triggered semiconductor bridge plasma energy creator and a reactive foil abutting an explosive..
10/09/14
20140301010
Electrostatic chuck device
An electrostatic chuck device is provided in which it is possible to uniformize an in-plane temperature distribution in a placement surface on which a plate-shaped sample such as a wafer is placed and it is possible to improve in-plane uniformity of plasma etching of the plate-shaped sample by uniformizing plasma density on the plate-shaped sample. The electrostatic chuck device includes an electrostatic chuck section that has an upper surface as a placement surface on which a plate-shaped sample is placed, and is made to have an internal electrode for electrostatic adsorption built-in, and a cooling base section that cools the electrostatic chuck section, wherein a heater element (4) having a heater pattern (21) of a predetermined shape is provided between the electrostatic chuck section and the cooling base section, and an island-shaped portion (24) that is independent from the heater pattern (21) and is made of the same material as the heater pattern (21) is provided in a gap portion (23) of the heater pattern (21)..
10/09/14
20140300590
Method for driving plasma display panel
A method is provided for driving a plasma display panel having parallel first and second electrodes, third electrodes crossing the first and second electrodes, and discharge cells with electrodes crossing mutually in the form of a matrix. The method includes a reset period during which distribution of wall charges in the discharge cells is uniformed, an addressing period during which wall charges are produced in the discharge cells according to display data, and a sustain discharge period during which sustain discharge is induced in discharge cells in which wall charges are produced during the addressing period.
10/09/14
20140300030
Method of manufacture of products from geopolymer composite
A method of manufacture of products from geopolymer composite shaped in a mold which is filled by casting of geopolymer composite in form of a precursor and after its hardening the casting is taken out from the mold and the casting surface is provided with a metallic layer. Before metal-plating casting surface with absorption capacity greater than 5% is treated to make it chemically stable so that ph of a leachate from 100 g of the bulk product in 1000 g distilled water after 24 hours does not exceed 9.
10/09/14
20140299973
Multilayer line trimming
Substantially simultaneous plasma etching of polysilicon and oxide layers in multilayer lines in semiconductors allows for enhanced critical dimensions and aspect ratios of the multilayer lines. Increasing multilayer line aspect ratios may be possible, allowing for increased efficiency, greater storage capacity, and smaller critical dimensions in semiconductor technologies..
10/09/14
20140299951
Novel hybrid method of patterning mtj stack
This invention comprises a method to make small mtj element using hybrid etching and oxygen plasma immersion ion implantation. The method has no removal of the magnetic free layer (or memory layer) and hence prevents any possible physical damage near the free layer edges.
10/09/14
20140299791
Target for extreme ultraviolet light source
Techniques for forming a target and for producing extreme ultraviolet light include releasing an initial target material toward a target location, the target material including a material that emits extreme ultraviolet (euv) light when converted to plasma; directing a first amplified light beam toward the initial target material, the first amplified light beam having an energy sufficient to form a collection of pieces of target material from the initial target material, each of the pieces being smaller than the initial target material and being spatially distributed throughout a hemisphere shaped volume; and directing a second amplified light beam toward the collection of pieces to convert the pieces of target material to plasma that emits euv light.. .
10/09/14
20140299764
Low temperature plasma probe and methods of use thereof
The present invention generally relates to a low temperature plasma probe for desorbing and ionizing at least one analyte in a sample material and methods of use thereof. In one embodiment, the invention generally relates to a low temperature plasma probe including: a housing having a discharge gas inlet port, a probe tip, two electrodes, and a dielectric barrier, in which the two electrodes are separated by the dielectric barrier, in which application of voltage from a power supply generates a low temperature plasma, and in which the low temperature plasma is propelled out of the discharge region by the electric field and/or the discharge gas flow..
10/09/14
20140299584
Plasma whirl reactor apparatus and methods of use
An apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials.
10/09/14
20140299576
Plasma processing method and plasma processing apparatus
A plasma processing method includes an etching process of etching an insulating film formed on a processing target object in a chamber by plasma of a first fluorine-containing gas with a tin film having a preset pattern as a mask; a modifying process of modifying, between a carbon-containing film and a ti-containing film adhering to a component within the chamber, a surface of the ti-containing film by plasma of an oxygen-containing gas while removing the carbon-containing film by the plasma of the oxygen-containing gas, after the etching process; a first removing process of removing a tio film, which is obtained by modifying the surface of the ti-containing film, by plasma of a second fluorine-containing gas; and a second removing process of removing a residual film of the ti-containing film, which is exposed by removing the tio film, from the component within the chamber by plasma of a chlorine-containing gas.. .
10/09/14
20140299571
Plasma processing method and plasma processing apparatus
Disclosed are a plasma processing method and a plasma processing apparatus which collectively perform etching under the same etching conditions while suppressing a shape abnormality. The multilayer film material has a polysilicon layer, a first metal layer formed on the polysilicon layer, and a hard mask layer which contains a tungsten layer formed on the first metal layer.
10/09/14
20140299459
Plasma whirl reactor apparatus and methods of use
An apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials.
10/09/14
20140299273
Multi-segment electrode assembly and methods therefor
A multi-segment electrode assembly having a plurality of electrode segments for modifying a plasma in a plasma processing chamber is disclosed. There is included a first powered electrode segment having a first plasma-facing surface, the first powered electrode segment configured to be powered by a first re signal.
10/09/14
20140299272
Plasma generation device and plasma processing apparatus
There is provided a plasma generation device, comprising: a waveguide configured to propagate a microwave; a plasma generation vessel connected to the waveguide; and a dielectric window interposed between the waveguide and the plasma generation vessel to introduce the microwave propagated by the waveguide into the plasma generation vessel. The plasma generation vessel is sphere-shaped and is disposed adjacent to a processing vessel configured to accommodate a substrate, and an interior of the plasma generation vessel is in communication with an interior of the processing vessel..
10/09/14
20140299152
Plasma processing method and plasma processing apparatus
A plasma processing apparatus includes a slot plate of an antenna and the slot plate has slots arranged in a circumferential direction thereof with respect to an axis line. A microwave is introduced into a processing space from the antenna via a dielectric window, and a through hole is formed in the dielectric window along the axis line.
10/09/14
20140299086
Plasma header gasket and system
A plasma header gasket for use with an internal combustion engine includes electrodes disposed around the perimeter of apertures in the gasket corresponding to piston cylinders in the engine. The electrodes produce a plasma spark in time with the engine to increase the efficiency of combustion.
10/09/14
20140299056
Low temperature migration enhanced si-ge epitaxy with plasma assisted surface activation
Epitaxial films are grown by alternately exposed to precursor dosing regions, inert gas plasma regions, hydrogen-containing plasma regions, chlorine-containing plasma and metrology regions, or regions where an atomic hydrogen source is located. Alternately, laser irradiation techniques may be substituted for the plasma energy in some of the processing regions.
10/02/14
20140296851
Apparatus for coagulating tissue
An apparatus for coagulating tissue, including a gas-delivering device for delivering a plasma comprised of an ionized inert gas from the outlet of the gas-delivering device, an electrode adapted to supply a high-frequency current that projects out of the gas-delivering device and a guiding device disposed at a distal end of the electrode. The relative configuration of the outlet of the gas-delivering device and the guiding device are such that the plasma (and an electric arc) can be directed in any direction 360° with respect to the outlet of the gas-delivering device.
10/02/14
20140296487
Modified human plasma polypeptide or fc scaffolds and their uses
Modified human plasma polypeptides or fc and uses thereof are provided.. .
10/02/14
20140296247
Heterocyclic compounds and uses thereof in the treatment of sexual disorders
Biologically active compounds, which are useful for treating a sexual disorder, are provided herein. Further provided are pharmaceutical compositions formulated for transdermal composition, which comprise a biologically active compound useful for treating a sexual disorder.
10/02/14
20140296214
Substituted tetrahydroisoquinoline compounds as factor xia inhibitors
The present invention provides compounds of formula (i): or stereoisomers, pharmaceutically acceptable salts thereof, wherein all of the variables are as defined herein. These compounds are inhibitors of factor xia and/or plasma kallikrein which may be used as medicaments..
10/02/14
20140296187
Methods for the synthesis of plasmalogens and plasmalogen derivatives, and therapeutic uses thereof
A method for preparing plasmalogens and derivatives thereof represented by formula b, wherein r1 and r2 are similar or different, derived from fatty acids; r3 is selected from hydrogen and small alkyl groups. The synthetic route involves production of novel cyclic plasmalogen precursors of formula a and their conversion to plasmalogens and plasmalogen derivatives of formula b.
10/02/14
20140296148
Medicament for therapeutic treatment and/or improvement of sepsis
A medicament for therapeutic treatment and/or improvement of sepsis in a patient with severe sepsis accompanied with one or more organ dysfunctions, wherein a value of international normalized ratio (inr) of a plasma specimen obtained from said patient is more than 1.4, which comprises thrombomodulin as an active ingredient.. .
10/02/14
20140296078
Methods of splicing 2g rebco high temperature superconductors using partial micro-melting diffusion pressurized splicing by direct fact-to-face contact of high temperature supecondcting layers and recovering superconductivity by oxygenation annealing
Disclosed is a splicing method of two second-generation rebco high temperature superconductor coated conductors (2g rebco hts ccs), in which, with stabilizing layers removed from the two strands of 2g rebco hts ccs through chemical wet etching or plasma dry etching, surfaces of the two high temperature superconducting layers are brought into direct contact with each other and heated in a splicing furnace in a vacuum for micro-melting portions of the surfaces of the high temperature superconducting layers to permit inter-diffusion of rebco atoms such that the surfaces of the two superconducting layers can be spliced to each other and oxygenation annealing for recovery of superconductivity which was lost during splicing.. .
10/02/14
20140295676
Method of operating vertical heat treatment apparatus, vertical heat treatment apparatus and non-transitory recording medium
A method of operating vertical heat treatment apparatus includes: cleaning interior of vertical reaction chamber by supplying cleaning gas; pre-coating the interior of the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas; eliminating charges by loading substrate holding unit holding a dummy semiconductor substrate or a conductive substrate into the reaction chamber and supplying the second gas while generating plasma from the second gas without supplying the first gas; loading the substrate holding unit holding a plurality of product semiconductor substrates into the reaction chamber; and forming thin film in the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas.. .
10/02/14
20140295671
Plasma processing apparatus and plasma processing method
A plasma processing apparatus is provided which includes a processing chamber disposed in a vacuum container, in a decompressed inside of which plasma is formed, a sample stage disposed in a lower part of the processing chamber, on a top surface of which a sample is mounted, a dielectric film made of a dielectric that forms a mounting surface on which the sample is mounted, and electrodes arranged inside the dielectric film and supplied with power for chucking and holding the sample onto the dielectric film, and when the sample is mounted on the sample stage, the sample is kept mounted on the sample stage until a sample temperature becomes a predetermined temperature or until a predetermined time elapses, and power is then supplied to the electrodes to chuck the sample to the sample stage and then start processing on the sample using the plasma.. .
10/02/14
20140295670
Dense oxide coated component of a plasma processing chamber and method of manufacture thereof
A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component..
10/02/14
20140295665
Method for removing native oxide and associated residue from a substrate
Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (nh3) and nitrogen trifluoride (nf3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((nh4)2sif6), and subliming the thin film off of the substrate surface.
10/02/14
20140295644
Method of manufacturing semiconductor chips
Provided is a method of manufacturing semiconductor chips superior in chip yield, reduction in chipping, and handling ability. An insulating film in a dividing region is removed by plasma etching to a front surface.
10/02/14
20140295583
Plasma processing apparatus and plasma processing method
In a plasma processing method and apparatus for processing a film to be processed contained in a film structure preliminarily formed on an upper surface of a wafer mounted in a processing chamber, by using plasma, a residual film thickness at an arbitrary time is calculated using a result of comparing detective differential waveform pattern data with actual differential waveform pattern data. The detective differential waveform pattern data is produced by using two basic differential waveform pattern data which respectively use, as parameters, residual thicknesses of the films to be processed in film structures having underlying films with different thicknesses and the wavelengths of the interference light.
10/02/14
20140295580
Method for manufacturing semiconductor device and manufacturing apparatus
A method for manufacturing a semiconductor device includes accommodating in a processing chamber a semiconductor structural body having a semiconductor substrate and a laminated structure formed on the semiconductor substrate and having multiple metal films including a noble-metal film, and generating a bias voltage on the semiconductor substrate while generating an oxygen plasma in the processing chamber such that a plasma treatment removes at least part of the noble-metal film in the laminated structure of the semiconductor structural body.. .
10/02/14
20140295555
Method of culturing cells
A blood component such as platelets is concentrated. The concentrate, such as platelet-rich plasma, is used in a cell culture medium to grow and proliferate cells.
10/02/14
20140295470
Method and reagent kit for measuring activated partial thromboplastin time
The present invention provides a method for measuring activated partial thromboplastin time. The method comprises: a first mixing step of mixing a blood plasma with a first reagent, wherein the first reagent comprises an activator and phosphatidylglycerol at a concentration equal to or greater than 25 μg/ml; a second mixing step of mixing a sample obtained in the first mixing step with a second reagent comprising a calcium salt; and a step of measuring coagulation time of the sample obtained in the second mixing step..
10/02/14
20140295465
Use of an anti-alpha-synuclein antibody to diagnose an elevated level of alpha-synuclein in the brain
This disclosure relates to the use of anti-α-synuclein antibody to diagnose an elevated level of α-synuclein in the brain. Specifically, the disclosure relates to the method of assessing the levels of α-synuclein in a blood plasma or csf following administration to the test subject of an anti-α-synuclein antibody or antigen-binding fragment thereof, which can bind α-synuclein with sufficient activity to alter the net efflux of α-synuclein from brain to blood, or from brain to csf..
10/02/14
20140295104
Film deposition apparatus and film deposition method
A film formation device (10) that increases the mechanical resistance of the liquid repellent film formed on the oxide film. The film formation device (10) includes an oxide film formation unit (14, 15, 16), which forms an oxidized film on a substrate by releasing grains towards the substrate that is rotated in a vacuum chamber (11), and forms an oxide film on the substrate by emitting oxygen plasma towards the oxidized film.
10/02/14
20140295063
Method of manufacturing a capacative touch sensor circuit using a roll-to-roll process to print a conductive microscopic patterns on a flexible dielectric substrate
Mutual capacitance touch sensor circuits are used in manufacturing displays, including touch screen displays, such as led, lcd, plasma, 3d, and other displays used in computing as well as stationary and portable electronic devices. A flexographic printing process may be used, for example, in a roll to roll handling system to print geometric patterns on a substrate, for example, a flexible dielectric substrate.


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