FreshPatents.com Logo
Enter keywords:  

Track companies' patents here: Public Companies RSS Feeds | RSS Feed Home Page
Popular terms

[SEARCH]

Plasma Reactor topics
Plasma Reactor
Feedback Control
Semiconductor
Constructive
Electrostatic Chuck
Free Radical
Plasma Generation
Switching Power Supply
User Interface
Magnetic Field
Irradiation
Nanoparticle
Glow Discharge
Semiconductor Wafer
Electronic Device

Follow us on Twitter
twitter icon@FreshPatents

Web & Computing
Cloud Computing
Ecommerce
Search patents
Smartphone patents
Social Media patents
Video patents
Website patents
Web Server
Android patents
Copyright patents
Database patents
Programming patents
Wearable Computing
Webcam patents

Web Companies
Apple patents
Google patents
Adobe patents
Ebay patents
Oracle patents
Yahoo patents

[SEARCH]

Plasma Reactor patents



      
           
This page is updated frequently with new Plasma Reactor-related patents. Subscribe to the Plasma Reactor RSS feed to automatically get the update: related Plasma RSS feeds.

Subscribe to updates on this page: Plasma Reactor RSS RSS

Date/App# patent app List of recent Plasma Reactor-related patents
03/20/14
20140079617
 Apparatus for treating a gas stream patent thumbnailApparatus for treating a gas stream
An apparatus for treating a gas stream comprises a nonthermal plasma reactor, for example a dielectric barrier discharge plasma reactor, containing a silicon-containing solid for reacting with a halogen-containing component of the gas stream to form a gaseous silicon halide. A sorbent bed of material chosen to react with the silicon halide to form inorganic halides is located downstream from the plasma reactor.
03/13/14
20140069584
 Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode patent thumbnailDifferential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode
A plasma reactor includes an rf-driven ceiling electrode overlying a process zone and two (or more) counter electrodes underlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy.. .
03/06/14
20140065835
 Protective coating for a plasma processing chamber part and a method of use patent thumbnailProtective coating for a plasma processing chamber part and a method of use
A flexible polymer or elastomer coated rf return strap to be used in a plasma chamber to protect the rf strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in a plasma processing apparatus. The coated rf strap minimizes particle generation and exhibits lower erosion rates than an uncoated base component.
02/20/14
20140048016
 Microwave plasma reactor for manufacturing synthetic diamond material patent thumbnailMicrowave plasma reactor for manufacturing synthetic diamond material
Wherein the microwave plasma reactor further comprises an electrically conductive plasma stabilizing annulus disposed around the substrate holder within the plasma chamber.. .
02/06/14
20140037522
 Method and apparatus for purging unwanted substances from air patent thumbnailMethod and apparatus for purging unwanted substances from air
A catalyst stage downstream of the non-thermal plasma reactor stage for further treating the air downstream of the non-thermal plasma reactor stage.. .
02/06/14
20140035458
 Plasma reactor with electron beam plasma source having a uniform magnetic field patent thumbnailPlasma reactor with electron beam plasma source having a uniform magnetic field
Electron beam-confining electromagnets of an electron beam generator are aligned with an electron beam axis, each of the electromagnets being folded to define a main section and a pair of angled wing sections disposed at respective angles relative to said main section, and a conductor wound around the edge.. .
02/06/14
20140034612
 Method of differential counter electrode tuning in an rf plasma reactor patent thumbnailMethod of differential counter electrode tuning in an rf plasma reactor
A method of controlling distribution of a plasma parameter in a plasma reactor having an rf-driven electrode and two (or more) counter electrodes opposite the rf driven electrode and facing different portions of the process zones. The method includes providing two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and governing the variable reactances to change distribution of a plasma parameter such as plasma ion density or ion energy..
02/06/14
20140034239
 Differential counter electrode tuning in a plasma reactor with an rf-driven workpiece support electrode patent thumbnailDifferential counter electrode tuning in a plasma reactor with an rf-driven workpiece support electrode
A plasma reactor includes an rf-driven wafer support electrode underlying a process zone and two (or more) counter electrodes overlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy.. .
01/23/14
20140021861
 Symmetrical inductively coupled plasma source with side rf feeds and rf distribution plates patent thumbnailSymmetrical inductively coupled plasma source with side rf feeds and rf distribution plates
A plasma reactor has an overhead multiple coil inductive plasma source with symmetric and radial rf feeds and cylindrical rf shielding around the symmetric and radial rf feeds. The radial rf feeds are symmetrically fed to the plasma source..
01/23/14
20140021035
 High power non-thermal plasma system for industrial applications patent thumbnailHigh power non-thermal plasma system for industrial applications
Methods of increasing the total power of non-thermal plasma power systems are described. Various embodiments of the present invention provide non-thermal plasma reactor assemblies and methods of operating said assemblies, each assembly comprising: (a) at least two non-thermal plasma reactors, each reactor comprising at least one inlet circumferential gas flow inlet apparatus, an electrode, and a flow restricted exit portal, said reactor configured to eject a jet of non-thermal plasma external to said reactor; (b) said at least two non-thermal plasma reactors configured to work in tandem with one another such that a first reactor electrode can be maintained at a high voltage electric potential relative to a second reactor electrode, said first and second reactor electrodes forming an electrode pair able to maintain a non-thermal plasma discharge between the first and second reactor electrodes..
01/23/14
20140020839
Inductively coupled plasma source with symmetrical rf feed
A plasma reactor has an overhead multiple coil inductive plasma source with rf feeds arranged in equilateral symmetry.. .
01/23/14
20140020838
Symmetrical inductively coupled plasma source with coaxial rf feed and coaxial shielding
A plasma reactor has an overhead multiple coil inductive plasma source with symmetric rf feeds and symmetrical rf shielding around the symmetric rf feeds.. .
01/23/14
20140020837
Inductively coupled plasma source with multiple dielectric windows and window-supporting structure
A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows..
01/23/14
20140020836
Inductively coupled plasma source with plural top coils over a ceiling and an independent side coil
A plasma reactor for processing a workplace includes a reactor chamber having a ceiling and a sidewali and a workplace support facing the ceiling and defining a processing region, and a pair of concentric independently excited rf coil antennas overlying the ceiling and a side rf coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently.. .
01/23/14
20140020835
Symmetrical inductively coupled plasma source with symmetrical flow chamber
A plasma reactor has an overhead multiple coil inductive plasma source with symmetric rf feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workplace support. A grid may be included for masking spatial effects of the struts from the processing region..
01/16/14
20140014495
System and process for functionalizing graphene
System and process in which graphene, which may be produced on a commercial scale, is highly purified, then functionalized in a vertical plasma reactor which can also deagglomerate and/or delaminate the graphene, as well as separating or classifying the functionalized graphene particles according to size. In one disclosed embodiment, the graphene is produced by combustion of magnesium (mg) and carbon dioxide (co2) in a highly exothermic reaction.
01/09/14
20140010969
Plasma treatment apparatus for producing coatings
An apparatus and method for treating layers are provided that use a plasma zone sealed from the outer atmospheric pressure. The apparatus includes a plasma reactor with a substrate carrier in form of a container receiving device and a closing element that is joined with the substrate carrier by a lifting device..
01/02/14
20140004009
Apparatus for processing exhaust fluid
Provided is an apparatus for processing exhaust fluid in which a fluid generated in a process chamber of an apparatus for manufacturing a semiconductor, a display panel, or a solar cell is ejected to the outside. The apparatus for processing exhaust fluid includes: a vacuum pump that is connected to the process chamber, vacuumizes the inside of the process chamber, and ejects the fluid generated in the process chamber to the outside; and a plasma reactor in which plasma is formed and the fluid generated in the process chamber decomposes, wherein the plasma reactor includes: an insulating conduit that is provided between the process chamber and the vacuum pump and provides a space in which the fluid decomposes; at least one electrode unit that is provided on the outer circumferential surface of the conduit and receives a voltage to form the plasma; and a buffer unit that is formed of an electrically conductive elastic substance and is disposed between the conduit and the electrode unit to attach the conduit and the electrode unit closely together..
12/26/13
20130340940
Rf feed line
This disclosure relates to a flexible triplate stripline that can operate in temperatures of 150 c-250 c, flexible to move up/down with the top of a plasma reactor, and prevent plasma generation near the power transmission line in the stripline. The transmission line may be exposed to ambient conditions.
12/26/13
20130340938
Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal
A plasma processing chamber includes a cantilever assembly and at least one vacuum isolation member configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein.
12/19/13
20130334964
Microwave power delivery system for plasma reactors
(en): a microwave power delivery system for supplying microwave power to a plurality of microwave plasma reactors (8), the microwave power delivery system comprising: a tuner (14) configured to be coupled to a microwave source (4) and configured to match impedance of the plurality of microwave plasma reactors to that of the microwave source; and a waveguide junction (18) coupled to the tuner and configured to guide microwaves to and from the plurality of microwave plasma reactors, wherein the waveguide junction comprises four waveguide ports including a first port coupled to the tuner, second and third ports configured to be coupled to respective microwave plasma reactors, and a fourth port coupled to a microwave sink (20), wherein the waveguide junction is configured to evenly split microwave power input from the tuner through the first port between the second and third ports for providing microwave power to respective microwave plasma reactors, wherein the waveguide junction is configured to decouple the second and third ports thereby preventing any reflected microwaves from one of the microwave plasma reactors from feeding across the waveguide junction directly into another microwave plasma reactor causing an imbalance, wherein the waveguide junction is further configured to feed reflected microwaves received back through the second and third ports which are balanced in terms of magnitude and phase to the tuner such that they can be reflected by the tuner and re-used, and wherein the waveguide junction is further configured to feed excess reflected power which is not balanced through the fourth port into the microwave sink.. .
12/05/13
20130320998
In-situ vhf current sensor for a plasma reactor
An rf current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber. An rf voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement..
11/28/13
20130315795
Plasma reactor gas distribution plate with radially distributed path splitting manifold
In a showerhead assembly, a path splitting manifold comprises a gas supply inlet and a planar floor and plural gas outlets extending axially through the floor and azimuthally distributed about the floor. The path splitting manifold further comprises a plurality of channels comprising plural paths between the inlet and respective ones of the plural outlets.
11/21/13
20130309783
Hydrogen-blocking film for ferroelectric capacitors
An ammonia-free method of depositing silicon nitride by way of plasma-enhanced chemical vapor deposition (pecvd). Source gases of silane (sih4) and nitrogen (n2) are provided to a parallel-plate plasma reactor, in which energy is capacitively coupled to the plasma, and in which the wafer being processed has been placed at a support electrode.
11/21/13
20130309161
Ammonia production by integrated intensified processes
An ammonia production process is disclosed. The process uses gasification of biomass waste and the like to produce syngas which, using an integrated system including using nitrogen enriched air and a porous coated catalyst, produces ammonia in a plasma reactor.
11/21/13
20130307414
Hybrid plasma reactor
A hybrid plasma reactor includes a reactor body having a plasma discharge space, a gas inlet, and a gas outlet; a hybrid plasma source including an inductive antenna inductively coupled to plasma formed in the plasma discharge space and a primary winding coil transformer coupled to the plasma and wound in a magnetic core; and an alternating switching power supply for supplying plasma generation power to the inductive antenna and the primary winding coil. The hybrid plasma reactor induces a plasma discharge using the inductively coupled plasma source and the transformer coupled plasma source, so that it has a wide operational area from a low pressure area to a high pressure area..
11/14/13
20130300289
Electrode assemblies, plasma generating apparatuses, and methods for generating plasma
Electrode assemblies for plasma reactors include a structure or device for constraining an arc endpoint to a selected area or region on an electrode. In some embodiments, the structure or device may comprise one or more insulating members covering a portion of an electrode.
11/07/13
20130292057
Capacitively coupled plasma source with rf coupled grounded electrode
An overhead rf coupling chamber couples rf power to a ceiling electrode of a plasma reactor chamber, the rf coupling chamber having a resonant annular volume defined by coaxial cylindrical conductors, one of which is coupled to an rf power source, the chamber ceiling having an annular gap around the electrode, and the resonant annular volume being aligned with the annular gap so that the resonant annular volume opens into the interior of the main chamber, thereby enhancing the electrical length of the rf coupling chamber.. .
10/31/13
20130284588
Method for scaling plasma reactors for gas treatment and devices therefrom
Systems and methods for the treatment of a gas are provided. A method includes providing multiple discharge chambers defined by dielectric sections, where each of the discharge chambers comprises sets of electrodes for producing electric fields in the discharge chambers, where the dielectric sections and the sets of electrodes are arranged to define a volume that inhibits the formation of volume-streamers and the discharge chambers are configured to either prevent pulsed electric fields generated in adjacent discharge chambers from substantially interacting or to allow interaction in constructive way.
10/31/13
20130284370
Independent control of rf phases of separate coils of an inductively coupled plasma reactor
Plasma distribution is controlled in a plasma reactor by controlling the phase differences between different rf coil antennas, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop.. .
10/31/13
20130284369
Two-phase operation of plasma chamber by phase locked loop
Plasma distribution is controlled in a plasma reactor by controlling the phase difference between opposing rf electrodes, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop.. .
10/24/13
20130278142
Three-coil inductively coupled plasma source with individually controlled coil currents from a single rf power generator
An inductively coupled plasma reactor has three concentric coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying two variable impedance elements in the current divider circuit in response to a desired current apportionment among the coil antennas received from a user interface.. .
10/24/13
20130278141
Three-coil inductively coupled plasma source with individually controlled coil currents from a single rf power generator
An inductively coupled plasma reactor has three concentric rf coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying only two reactive elements in the current divider circuit.. .
10/24/13
20130278135
Multi discharging tube plasma reactor
A plasma reactor having multi discharging tubes is disclosed, through which activated gas containing ion, free radical, atom and molecule is generated through plasma discharging, and different process gases are injected into multi discharging tubes in which solid, power and gas, etc., are plasma-treated with the activated gas to perform processes including cleaning process for semiconductor, and a plasma state can be maintained even at low power.. .
10/24/13
20130277339
Plasma reactor electrostatic chuck with cooled process ring and heated workpiece support surface
Undesirable heating of a semiconductor process ring is prevented by thermally isolating the process ring from the insulating puck of an electrostatic chuck, and providing a thermally conductive and electrically insulating thermal ring contacting both the semiconductor process ring and an underlying metal base having internal coolant flow passages.. .
10/24/13
20130277333
Plasma processing using rf return path variable impedance controller with two-dimensional tuning space
In a plasma reactor having a driven electrode and a counter electrode, an impedance controller connected between the counter electrode and ground includes both series sand parallel variable impedance elements that facilitate two-dimensional movement of a ground path input impedance in a complex impedance space to control spatial distribution of a plasma process parameter.. .
09/26/13
20130249399
Plasma processing apparatus
The present invention provides a plasma processing apparatus. The apparatus includes a vacuum chamber, a plasma reactor arranged in the vacuum chamber for plasma processing, an rf power source for providing rf signals to the plasma reactor and an rf power transmission unit for transmitting rf signals from the rf power source to the plasma reactor inside the vacuum chamber.
09/12/13
20130237065
Plasma reactor with conductive member in reaction chamber for shielding substrate from undesirable irradiation
Placing a conductive member between a plasma chamber in a remote plasma reactor and a substrate to shield the substrate from irradiation of undesirable electromagnetic radiation, ions or electrons. The conductive member blocks the electromagnetic radiation, neutralizes ions and absorbs the electrons.
08/15/13
20130206594
Plasma reactor with tiltable overhead rf inductive source
Correction of skew in plasma etch rate distribution is performed by tilting the overhead rf source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead rf source power applicator is suspended..
08/08/13
20130200170
Gas dispersion plate for plasma reactor having extended lifetime
The invention includes a gas dispersion plate to provide reactant gases to a reaction chamber comprising: a plate body having a first surface and a second surface, the plate body having at least one injection passage that spans the plate from the first surface to the second surface, the distance along the passage from the first surface to the second surface defining the length of the passage, wherein the injection passage includes an ion trap chamber, through which gas flows from the first surface of the plate to the second surface of the plate. In an embodiment, the passage includes an inlet portion interposed between the first surface and the chamber and an outlet portion that is interposed between the ion trap chamber and the second surface..
07/25/13
20130189446
Low pressure high frequency pulsed plasma reactor for producing nanoparticles
The present invention provides a low-pressure very high frequency pulsed plasma reactor system for synthesis of nanoparticles. The system includes a chamber configured to receive at least one substrate and capable of being evacuated to a selected pressure.
07/11/13
20130175928
Hybrid plasma reactor
A hybrid plasma reactor includes a first plasma chamber for providing a first ring-shaped plasma discharge space, second plasma chambers providing a second plasma discharge space connected to the first plasma discharge space and coupled to magnetic flux channels, a hybrid plasma source including magnetic cores, which partially surround the first plasma chamber and have magnetic entrances forming the magnetic flux channels, and primary winding coils wound in the magnetic cores and complexly generating ring-shaped transformer-coupled plasma in the first plasma discharge space and magnetic flux channel coupled plasma in the second plasma discharge space, and an ac switching power supply for supplying plasma generation power to the primary winding coils. The hybrid plasma reactor can complexly generate magnetic flux channel coupled plasma and transformer coupled plasma so that it has a high control capability for plasma ion energy and a wide operation region from a low-pressure region to a high-pressure region..
07/04/13
20130171038
Magnetic flux channel coupled plasma reactor
A magnetic flux channel coupled plasma reactor includes a hollow reactor body having a plasma discharge space coupled to magnetic flux channels, a magnetic flux channel coupled plasma source including magnetic cores having two or more magnetic flux entrances forming the magnetic channel and primary winding coils wound in the magnetic cores and generating magnetic flux channel coupled plasma in the plasma discharge space, and an ac switching power supply for supplying plasma generation power to the primary winding coils and the capacitively coupled electrodes. The magnetic flux channel coupled plasma reactor independently generates the magnetic flux channel coupled plasma or hybrid plasma through capacitively coupled electrodes or inductive antenna coils in the inside of the reactor body..
06/27/13
20130164941
Plasma reactor with adjustable plasma electrodes and associated methods
Plasma reactors with adjustable plasma electrodes and associated methods of operation are disclosed herein. The plasma reactors can include a chamber, a workpiece support for holding a microfeature workpiece, and a plasma electrode in the chamber and spaced apart from the workpiece support.
06/20/13
20130154480
Hybrid plasma reactor
A hybrid plasma reactor includes a reactor body having a plasma discharge space, a gas inlet, and a gas outlet; a hybrid plasma source including a first hybrid electrode and a second hybrid electrode, which face each other while the reactor body is positioned therebetween and provide a current path having one or more turns, to be inductively and capacitively coupled to plasma formed in the plasma discharge space; and an alternating switching power supply for supplying plasma generation power to the first hybrid electrode and the second hybrid electrode. The hybrid plasma reactor can complexly generate capacitively coupled plasma and inductively coupled plasma, thereby achieving a wide operation area from a low-pressure area to a high-pressure area..
06/20/13
20130154479
Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers
A capacitively coupled plasma reactor comprising a processing chamber, a first electrode, a second electrode and a thermoelectric unit. The processing chamber has an upper portion with a gas inlet and a lower portion, and the upper portion is in fluid communication with the lower portion.
05/30/13
20130136872
Plasma processing in a capacitively-coupled reactor with trapezoidal-waveform excitation
A method is provided for exciting at least one electrode of a capacitively coupled reactive plasma reactor containing a substrate. The electrode is excited by applying a rf voltage with a trapezoidal waveform comprising a ramp-up, a high plateau, a ramp-down and a low plateau.
05/30/13
20130136654
Apparatus and method for decontaminating and sterilizing chemical and biological agent
Disclosed are apparatus and method for decontaminating and sterilizing chemical and biological agents, which can efficiently decontaminate and sterilize high precision electronic devices, communication devices, computers or inside of vehicles and air planes contaminated with chemical and biological agent by using mixture of non-thermal atmospheric pressure air plasma and oxidizing peroxide vapor. The apparatus according to the present invention comprises a decontamination and sterilization chamber 10; a first fluid supplying line l1 and a second fluid supplying line l2, which are installed in the form of closed circuit between the inlet 11 and outlet 12 of the decontamination and sterilization chamber 10; a peroxide vapor supplier which is installed on the first fluid supplying line; and a non-thermal atmospheric pressure air plasma reactor 70 which is installed on the second fluid supplying line l2..
05/23/13
20130131199
Syngas production through the use of membrane technologies
Streams (11) of natural gas contaminated with significant amounts of carbon dioxide can be efficiently and economically processed to create syngas (16). An available source (1) of flue gas that might otherwise be dispersed into the atmosphere in conjunction with such a co2-laden natural gas stream (11) renders the process even more economical and efficient through the creation of multiple feedstreams (14, 27, 34) that are combined to deliver a composite near equal mixture of methane and co2 to a plasma reactor (15) or the like that will generate syngas.
05/16/13
20130119020
System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
A plasma process chamber includes a top electrode, a bottom electrode disposed opposite the top electrode, the bottom electrode capable of supporting a substrate. The plasma process chamber also includes a plasma containment structure defining a plasma containment region, the plasma containment region being less than an entire surface of the substrate.
05/02/13
20130105085
Plasma reactor with chamber wall temperature control
Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a first conductive body disposed about a substrate support in the inner volume of a process chamber; a first conductive ring having an inner edge coupled to a first end of the second conductive body and having an outer edge disposed radially outward of the inner edge; a second conductive body coupled to the outer edge of the first conductive ring and having at least a portion disposed above the first conductive ring, wherein the first conductive ring and the at least a portion of the second conductive body partially define a first region above the first conductive ring; and a heater configured to heat the first conductive body, the second conductive body, and the first conductive ring..
04/25/13
20130102156
Components of plasma processing chambers having textured plasma resistant coatings
A component of a plasma processing chamber includes a three dimensional body having a highly dense plasma resistant coating thereon wherein a plasma exposed surface of the coating has a texture which inhibits particle generation from film buildup on the plasma exposed surface. The component can be a window of an inductively coupled plasma reactor wherein the window includes a textured yttria coating.
04/25/13
20130102155
Icp source design for plasma uniformity and efficiency enhancement
An icp a plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window.
04/25/13
20130101730
Microwave plasma reactors
New and improved microwave plasma assisted reactors, for example chemical vapor deposition (mpcvd) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 torr to about 760 torr.
04/25/13
20130098883
Electron beam plasma source with profiled magnet shield for uniform plasma generation
A plasma reactor employs an e-beam source to generate plasma, and the e-beam source has a configurable magnetic shield.. .
04/25/13
20130098882
Electron beam plasma source with segmented beam dump for uniform plasma generation
A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.. .
04/25/13
20130098873
Overhead electron beam source for plasma ion generation in a workpiece processing region
A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam flowing into the processing region through the ceiling of the main chamber.. .
04/25/13
20130098872
Switched electron beam plasma source array for uniform plasma production
An array of electron beam sources surrounding a processing region of a plasma reactor is periodically switched to change electron beam propagation direction and remove or reduce non-uniformities.. .
04/25/13
20130098555
Electron beam plasma source with profiled conductive fins for uniform plasma generation
In a plasma reactor employing a planar electron beam as a plasma source, the electron beam source chamber has an internal conductive fin that is profiled along a direction transverse to the beam propagation diction and parallel to the plane of the electron beam, in order to correct electron beam density distribution.. .
04/25/13
20130098553
Electron beam plasma source with profiled chamber wall for uniform plasma generation
A plasma reactor that generates plasma in a workplace processing chamber by an electron beam, has an electron beam source chamber with a wall opposite to the electron beam propagation direction, the wall being profiled to compensate for a non-uniformity in electron beam density distribution.. .
04/25/13
20130098551
Electron beam plasma source with arrayed plasma sources for uniform plasma generation
A plasma reactor that generates plasma in workpiece processing chamber by a electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron density in different portions of the processing chamber. In another embodiment, an array of separately controlled electron beam source chambers is provided..
04/18/13
20130092525
Concentric flow-through plasma reactor and methods therefor
The present invention provides a radiofrequency plasma apparatus for the production of nanoparticles and method for producing nanoparticles using the apparatus. The apparatus is designed to provide high throughput and makes the continuous production of bulk quantities of high-quality crystalline nanoparticles possible.
04/11/13
20130087287
Plasma reactor for removal of contaminants
Provided is a plasma reactor for removal of contaminants, which is installed between a process chamber and a vacuum pump and removes contaminants emitted from a process chamber. The plasma reactor includes: at least one dielectric body that forms a plasma generation space therein; a ground electrode connected to at least one end of the dielectric body; and at least one driving electrode fixed to an outer peripheral surface of the dielectric body, and connected to an ac power supply unit to receive an ac driving voltage.
03/21/13
20130069531
Microwave plasma reactors
New and improved microwave plasma assisted reactors, for example chemical vapor deposition (mpcvd) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 torr to about 760 torr.
03/21/13
20130068161
Gas delivery and distribution for uniform process in linear-type large-area plasma reactor
An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube.
03/07/13
20130056811
Hydrogen-blocking film for ferroelectric capacitors
An ammonia-free method of depositing silicon nitride by way of plasma-enhanced chemical vapor deposition (pecvd). Source gases of silane (sih4) and nitrogen (n2) are provided to a parallel-plate plasma reactor, in which energy is capacitively coupled to the plasma, and in which the wafer being processed has been placed at a support electrode.
02/28/13
20130052830
Plasma reactor having dual inductively coupled plasma source
Provided is a plasma reactor having a dual inductively coupled plasma source that includes a plasma reactor body having a substrate processing area and a dielectric window which comes in contact with the substrate processing area; and a plasma source including a first antenna for providing first induced electromotive force for generating plasma onto a central area of the substrate processing area through the dielectric window and a second antenna for providing second induced electromotive force for generating the plasma onto an outer area of the substrate processing area, wherein a tsv is formed at a target substrate within the substrate processing area by repeatedly performing a deposition process and an etch process using the plasma generated through the dual inductively coupled plasma source.. .
02/28/13
20130052369
Plasma reactor
A plasma reactor with a recipient (33) and an electrode (38) has two exhaust openings (34, 35) spaced apart in a close proximity to the electrode (38). A flow diverter body (37) in the space of the reactor (33) between the periphery (313) of the electrode (3a) and the exhaust openings (35, 34) diverts the exhaust effect of the exhaust openings (35, 34) to avoid combined exhausting effect to become effective in the reactor space adjacent to the addressed periphery (313)..


Popular terms: [SEARCH]

Plasma Reactor topics: Plasma Reactor, Feedback Control, Semiconductor, Constructive, Electrostatic Chuck, Free Radical, Plasma Generation, Switching Power Supply, User Interface, Magnetic Field, Irradiation, Nanoparticle, Glow Discharge, Semiconductor Wafer, Electronic Device

Follow us on Twitter
twitter icon@FreshPatents

###

This listing is a sample listing of patents related to Plasma Reactor for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Plasma Reactor with additional patents listed. Browse our RSS directory or Search for other possible listings.
     SHARE
  
         


FreshNews promo



2.4115

3397

4 - 0 - 68