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Photoelectric Conversion patents

      

This page is updated frequently with new Photoelectric Conversion-related patent applications.




 Imaging device and imaging system patent thumbnailImaging device and imaging system
The imaging device performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with each other. In a first period during which a photoelectric conversion portion of at least one of the pixels accumulates an electric charge, signals based on electric charges held in holding portions of the plurality of pixels are sequentially output to an output line.
Canon Kabushiki Kaisha


 Image device, image system, and control  image device patent thumbnailImage device, image system, and control image device
An image device transfers charges of a previous frame from the holding units to the amplification units, during a read-out period of each frame, the read-out period includes a period in which a plurality of overflow transistors are in an on-state and a first period in which a plurality of photoelectric conversion units accumulate charges, and, during a second period following the first period, the plurality of photoelectric conversion units of the plurality of pixels accumulate charges while the plurality of holding units of the plurality of pixels hold the charges accumulated during the first period. During the first and second periods, each of the plurality of pixels performs a plurality of times of charge transfers from the photoelectric conversion unit to the holding unit.
Canon Kabushiki Kaisha


 Imaging device and imaging system patent thumbnailImaging device and imaging system
An imaging device includes pixels including a photoelectric conversion unit, a holding unit that holds charge, and an amplifier unit. The pixels include a first group outputting a signal based on charge generated during a first exposure period, and a second group outputting a signal based on charge generated during a second exposure period longer than the first exposure period.
Canon Kabushiki Kaisha


 Imaging device and imaging system patent thumbnailImaging device and imaging system
An imaging device includes pixels including a photoelectric conversion unit, a holding unit holding charge transferred from the photoelectric conversion unit, and an amplifier unit outputting signal based on the charge. The pixels output a first signal based on charge generated in a first exposure period and a second signal based on charge generated in a second exposure period of different length.
Canon Kabushiki Kaisha


 Thermal emission source and two-dimensional photonic crystal for use in the same emission source patent thumbnailThermal emission source and two-dimensional photonic crystal for use in the same emission source
A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer..
Japan Science And Technology Agency


 Active antenna associated device and system, and transmitting and receiving calibration method patent thumbnailActive antenna associated device and system, and transmitting and receiving calibration method
An active antenna associated device and system, and a transmitting and receiving calibration method, used for implementing extensible design of an antenna array, reducing construction implementation difficulty, and ensuring construction implementation reliability. The active antenna unit comprises: n active antenna arrays, a main calibration coupling circuit unit, a transmitting and receiving calibrating unit, a calibration parameter storage unit, and a radio over fiber (rof) photoelectric conversion unit, wherein n is larger than 1.
China Academy Of Telecommunications Technology


 Photovoltaic cell module patent thumbnailPhotovoltaic cell module
In accordance with one embodiment, there is provided a photovoltaic cell module including a plurality of photovoltaic cell structures including a hole transport layer and an electron transport layer which are disposed on a common photoelectric conversion layer so that electromotive force polarities are alternately different, wherein the photovoltaic cell structures are electrically connected in series.. .
Kabushiki Kaisha Toshiba


 Organic photoelectric conversion device patent thumbnailOrganic photoelectric conversion device
According to one embodiment, an organic photoelectric conversion device includes: an organic photoelectric conversion layer, a metal-oxide layer, and a buffer layer. The metal-oxide layer includes metal oxide.
Kabushiki Kaisha Toshiba


 Photoelectric conversion element, solid-state imaging device, and organic light-absorbing material patent thumbnailPhotoelectric conversion element, solid-state imaging device, and organic light-absorbing material
A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode and the second electrode. The photoelectric conversion material layer contains a substance formed of the following structural formula (1)..
Sony Corporation


 Photoelectric conversion material dispersion liquid and producing method thereof, producing method and producing apparatus of photoelectric conversion film, and photoelectric conversion device patent thumbnailPhotoelectric conversion material dispersion liquid and producing method thereof, producing method and producing apparatus of photoelectric conversion film, and photoelectric conversion device
A photoelectric conversion material dispersion liquid of an embodiment includes: perovskite crystal particles having a composition represented as abx3, where a is a monovalent cation of an amine compound, b is a divalent cation of a metal element, and x is a monovalent anion of a halogen element, and having an average particle diameter of not less than 10 nm nor more than 10000 nm; and a dispersion medium which is composed of a poor solvent to the perovskite crystal particles, and in which the perovskite crystal particles are dispersed.. .
Kabushiki Kaisha Toshiba


Compound-semiconductor photovoltaic cell and manufacturing compound-semiconductor photovoltaic cell

A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell made of a first compound-semiconductor material which lattice matches with gaas or ge; a first tunnel junction layer arranged on a deep side farther than the first photoelectric conversion cell in a light incident direction, and including a first p-type (alx1ga1-x1)y1in1-y1as (0≦x1<1, 0<y1≦1) layer and a first n-type (alx2ga1-x2)y2in1-y2p (0≦x2<1, 0<y2<1) layer; and a second photoelectric conversion cell arranged on a deep side farther than the first tunnel junction layer in the light incident direction, and made of a second compound-semiconductor material which is a gaas-based semiconductor material. The first photoelectric conversion cell and the second photoelectric conversion cell are joined via the first tunnel junction layer, and a lattice constant of the first n-type (alx2ga1-x2)y2in1-y2p layer is greater than a lattice constant of the first photoelectric conversion cell..
Rich Company, Ltd.

Photoelectric conversion element, solar cell, solar cell module, and solar power generating system

A photoelectric conversion element of an embodiment includes a substrate, a transparent first electrode on the substrate, a second electrode, and a light absorbing layer of a homo-junction type interposed between the first electrode and the second electrode. The light absorbing layer includes a p-type region on the second electrode side and an n-type region on the first electrode side.
Kabushiki Kaisha Toshiba

Photoelectric conversion element, solar battery, solar battery module, and solar power generation system

A photoelectric conversion element of an embodiment includes a first electrode, a second electrode, and a light-absorbing layer containing a chalcopyrite-type compound containing a group ib element, a group iiib element, and a group vib element between the first electrode and the second electrode. A region in which concentration of the group ib element in the light-absorbing layer is from 0.1 to 10 atom %, both inclusive, is included in a region up to a depth of 10 nm in a direction from a principal plane of the light-absorbing layer on a side of the second electrode to a side of the first electrode..
Kabushiki Kaisha Toshiba

Image sensor device

Image sensor devices of related art have a problem that an auto-focus accuracy deteriorates due to crosstalk of electrons between a plurality of photodiodes formed below one microlens. According to one embodiment, at least some of a plurality of pixels in an image sensor device include: first and second photoelectric conversion elements (pd_l, pd_r) that are formed on a semiconductor substrate below one microlens (45); and a potential barrier (34) that inhibits transfer of electric charges between at least a part of a lower region of the first photoelectric conversion element (pd_l) and at least a part of a lower region of the second photoelectric conversion element (pd_r) in a depth direction of the semiconductor substrate..
Renesas Electronics Corporation

Solid-state image sensor and image pickup apparatus

A solid-state image sensor comprising a plurality of pixels including photoelectric conversion elements arranged in matrix and an microlens array in which a plurality of microlenses respectively corresponding to the plurality of pixels are arranged, wherein a first group including microlenses each having a first shape and a second group including microlenses each having a second shape different from the first shape are arranged in the microlens array, and a center of a region in which the microlenses constituting the first group is shifted from a center of an effective pixel region of the image sensor, and a region in which the microlenses constituting the second group are arranged includes two portions arranged to sandwich the entire first group.. .
Canon Kabushiki Kaisha

Image pickup device and manufacturing image pickup device

An image pickup device having a pixel region in which pixels are arranged, and in which a multilayer wiring structure is disposed. Each pixel includes a photoelectric conversion unit, a charge accumulation unit, a floating diffusion, a light shielding portion covering the charge accumulation unit and opening above the photoelectric conversion unit, and a waveguide which overlaps at least partially a portion at which the light shielding portion opens in a plan view.
Canon Kabushiki Kaisha

Solid-state image pickup device and image pickup system

A solid-state image pickup device has an image pickup pixel including a first photoelectric conversion portion and a first transistor and a focus detection pixel including a second photoelectric conversion portion, a second transistor, and a light shielding portion, in which a reflection preventing portion is provided on the underface side of the light shielding portion.. .
Canon Kabushiki Kaisha

Image sensor and image pickup apparatus including the same

An image sensor includes a plurality of pixels. Each of the plurality of pixels includes a microlens, a waveguide unit having a core and a cladding and capable of propagating light transmitted through the microlens, and a pair of photo diodes and configured to carry out photoelectric conversion of light guided by the waveguide unit.
Canon Kabushiki Kaisha

Photovoltaic cell and manufacturing the same, manufacture device and production line for photovoltaic cell

The present invention provides a photovoltaic cell and a method of manufacturing the same, a manufacture device and a production line for a photovoltaic cell. The method of manufacturing a photovoltaic cell includes steps of: forming an anode layer on a substrate; forming, by spin coating, a donor-acceptor polymer mixed film layer on the substrate; and forming a cathode layer on the substrate.
Hefei Boe Optoelectronics Technology Co., Ltd.

Organic photoelectric conversion device and solid-state imaging device

In the general formula (1), a1, a2 and a3 respectively represent a different substituent group.. .

Image pickup device, manufacturing image pickup device, and electronic apparatus

An image pickup device includes: a photodiode provided in a silicon substrate, and configured to generate electric charge corresponding to an amount of received light, by performing photoelectric conversion; and a transfer transistor provided at an epitaxial layer on the silicon substrate, and configured to transfer the electric charge generated in the photodiode, wherein the transfer transistor includes a gate electrode and a channel region, the gate electrode being embedded in the epitaxial layer, and the channel region surrounding the gate electrode, and the channel region has, in a thickness direction, a concentration gradient in which a curvature of a potential gradient is free from a mixture of plus and minus signs.. .
Sony Semiconductor Solutions Corporation

Imaging device, operating the same, module, and electronic device

An imaging device which can perform imaging with a global shutter system and in which transistors are shared by pixels is provided. The imaging device includes first and second photoelectric conversion elements and first to sixth transistors.
Semiconductor Energy Laboratory Co., Ltd.

Image sensors including non-uniformly doped transfer gate in recess

An image sensor includes a photoelectric conversion portion providing a recessed region, a transfer gate provided in the recessed region, and a floating diffusion region adjacent the transfer gate. The transfer gate includes a first pattern and a second pattern, which are sequentially stacked in the recessed region and have different conductivity types from each other..
Samsung Electronics Co., Ltd.

Photoelectric conversion element and solar cell

Where in the formula (1a) or (1b), r1 and r2 represent a substituted or unsubstituted alkyl group or aromatic hydrocarbon group and may be identical or different, and r1 and r2 may bind with each other to form a substituted or unsubstituted heterocyclic group containing a nitrogen atom.. .

Solid-state imaging device, driving method, and electronic device

Provided is a solid-state imaging device including: a pixel section configured to include a plurality of pixels arranged in a matrix form, the plurality of pixels performing photoelectric conversion; column signal lines configured to transmit pixel signals output from the pixels in units of columns; an ad converting section configured to include a comparator that compares a reference signal serving as a ramp wave with the pixel signals transmitted via the column signal line and convert a reference level and a signal level of the pixel signals into digital signals independently based on a comparison result of the comparator; a switch configured to be connected with the column signal lines; and a control section configured to turn on the switch only during a certain period of time in a period of time in which the comparator is reset and cause the column signal lines to be short-circuited.. .
Sony Corporation

Solid state imaging device and imaging system

A solid state imaging device includes a pixel unit; a signal line; a readout circuit that outputs, to the signal line, a first signal corresponding to a state where the pixel is reset and a second signal based on charges generated by photoelectric conversion in the photoelectric conversion element; a signal output circuit including an amplifier and a clamp capacitor, wherein a first terminal of the clamp capacitor is connected to the signal line and a second terminal of the clamp capacitor is connected to an input terminal of the amplifier; a correction circuit that outputs a correction signal that is based on a difference between an output signal of the amplifier and a reference signal; and a holding circuit configured to hold the correction signal and apply the correction signal to the input terminal of the amplifier when the first signal is output to the signal line.. .
Canon Kabushiki Kaisha

Photoelectric conversion device

A photoelectric conversion device includes: an element substrate having a first electrode, a photoelectric conversion layer, and a second electrode, the photoelectric conversion layer being provided above the first electrode and performing charge separation by energy of irradiated light, and the second electrode being provided above the photoelectric conversion layer; a counter substrate facing the element substrate; and a sealing layer provided between the element substrate and the counter substrate. The element substrate, the counter substrate, and the sealing layer define a sealing region sealing the photoelectric conversion layer.
Kabushiki Kaisha Toshiba

Photoelectric conversion element and imaging element

Provided is a photoelectric conversion element including: a lower electrode, a charge blocking layer which suppresses injection of a charge from the lower electrode, an organic layer which includes a photoelectric conversion layer, and an upper electrode which includes a transparent electrode layer, which are laminated in this order on a substrate. The photoelectric conversion layer is configured of an amorphous film and has a bulk hetero-structure of a p-type organic semiconductor and an n-type organic semiconductor formed of fullerenes.
Fujifilm Corporation

Solar cell

Provided is a solar cell comprising a photoelectric conversion unit on which textures are formed, and an electrode that includes a plurality of conductive particles. The average size of the textures is adjusted so that the diameter of an inscribed circle in a space surrounded by the ridgelines of a plurality of textures that are adjacent to each other in the textures and a virtual line that connects the vertices of the adjacent textures is smaller than the average particle size of the conductive particles..
Panasonic Intellectual Property Management Co., Ltd.

Solid-state imaging apparatus and electronic device

Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.. .
Sony Corporation

Solid state imaging device, manufacturing solid-state imaging device, and electronic apparatus

The solid-state imaging device includes a substrate, pixels each including a photoelectric conversion unit formed in the substrate, and a color filter layer formed on the light incidence surface side of the substrate. The solid-state imaging device also includes a device isolating portion that is formed to divide the color filter layer and the substrate for the respective pixels, and has a lower refractive index than the refractive indexes of the color filter layer and the substrate..

Laser microscope and microscopy method

Fluorescence generated by multiphoton excitation can be observed simultaneously using multiple beams, and multiple points can be observed simultaneously with a high signal-to-noise ratio with low invasiveness. Provided is a laser microscope including: modulation units that apply different modulations to a plurality of ultrashort-pulse laser light beams of the same type emitted from a light source unit; an illumination optical system that simultaneously focuses the plurality of ultrashort-pulse laser light beams, to which the different modulations are applied by the modulation units, onto different positions of a sample; a fluorescence detecting device that detects fluorescence generated at a focal position of each ultrashort-pulse laser light beam and performs photoelectric conversion of the fluorescence; and a demodulation unit that demodulates an output from the fluorescence detecting device based on modulation information from the modulation units..
Olympus Corporation

Endoscope device

An endoscope device includes: a light source that emits white illumination light including rays of light of red, green, and blue wavelength bands, or emits narrow band illumination light having narrow band light included in each of the blue and green wavelength bands; an image sensor that has pixels arranged in a matrix pattern and performs photoelectric conversion on light received by each pixel to generate an electric signal; and a color filter having filter units arranged on a light receiving surface of the image sensor, each of the filter units being formed of blue filters for transmitting the light of the blue wavelength band, green filters for transmitting the light of the green wavelength band, and red filters for transmitting the light of the red wavelength band, the number of the blue filters and the number of the green filters being larger than the number of the red filters.. .
Olympus Corporation

Imaging device, operating method thereof, and electronic device

An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors.
Semiconductor Energy Laboratory Co., Ltd.

Photoelectric conversion film, photoelectric conversion element and electronic device

There is provided a photoelectric conversion film including a quinacridone derivative represented by the following general formula (1) and a subphthalocyanine derivative represented by the following general formula (2).. .
Sony Semiconductor Solutions Corporation

Stacked image sensor and manufacturing the same

A stacked image sensor and a method of manufacturing the same are provided. The stacked image sensor includes a lower photoelectric conversion layer, a micro-lens provided on the lower photoelectric conversion layer, and an upper photoelectric conversion layer provided on the micro-lens.
Samsung Electronics Co., Ltd.

Imaging element and imaging apparatus

An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit.
Sony Corporation

Solid state imaging device and electronic apparatus

The present disclosure relates to a solid state imaging device and an electronic apparatus in which, in phase difference pixels that do not include a light blocking layer for forming a phase difference, the phase difference detection characteristics can be made uniform regardless of the image height. Provided is a solid state imaging device including a pixel array unit in which a plurality of pixels are two-dimensionally arranged in a matrix configuration.
Sony Corporation

Imaging controlling same

An imaging element includes a plurality of photoelectric conversion units that output an image signal for each pixel through a micro lens. An imaging signal processing circuit separates image signals output from the imaging element into a left-eye image signal and a right-eye image signal.
Canon Kabushiki Kaisha

Imaging apparatus and imaging system

An imaging apparatus includes a pixel configured to generate a signal in accordance with an incident light by a photoelectric conversion; a differential amplifier including a first input terminal to which a voltage based on the signal from the pixel is input, and a second input terminal to which a reference voltage is input; a current supply unit configured to supply a bias current to the differential amplifier; and a comparing unit configured to compare the voltage of the first input terminal of the differential amplifier with a threshold voltage, and configured to output a control signal based on a comparison result to the current supply unit, and the current supply unit changes a magnitude of the bias current supplied to the differential amplifier in accordance with the control signal input from the comparing unit.. .
Canon Kabushiki Kaisha

Solid-state imaging element and camera system

A solid-state imaging element that includes a plurality of semiconductor layers stacked, a plurality of stack-connecting parts for electrically connecting the plurality of semiconductor layers, a pixel array part in which pixel cells that include a photoelectric conversion part and a signal output part are arrayed in a two-dimensional shape, and an output signal line through which signals from the signal output part of the pixel cells are propagated, in which the plurality of semiconductor layers includes at least a first semiconductor layer and a second semiconductor layer, and, in the first semiconductor layer, the plurality of pixel cells are arrayed in a two-dimensional shape, the signal output part of a pixel group formed with the plurality of pixel cells shares an output signal line wired from the stack-connecting parts, and the output signal line has a separation part which can separate each output signal line.. .
Sony Corporation

Photovoltaic module

A photovoltaic module capable of suppressing separation of a tab electrode can be obtained. The photovoltaic module includes a plurality of semiconductor layers including a photoelectric conversion layer, a plurality of photovoltaic elements including a finger electrode for collecting generated currents, formed on the semiconductor layers on a side of a light receiving surface, and a tab electrode for electrically connecting the plurality of photovoltaic elements, in which the tab electrode is electrically connected to the finger electrode in a region corresponding to a power generation region of the photovoltaic element and bonded on the light receiving surface through an insulating bonding material..
Panasonic Intellectual Property Management Co., Ltd.

Optical sensor element and photoelectric conversion device

Two gate electrodes are provided on upper and lower sides of an oxide semiconductor active layer through respective insulating films. In addition, a first read-out electrode and a second read-out electrode are provided on right and left sides of the oxide semiconductor active layer.
Nlt Technologies, Ltd.

Image sensor having fixed charge film

An image sensor includes a substrate including a plurality of photoelectric conversion parts and a pixel isolation trench extending from a surface of the substrate between the photoelectric conversion parts, a first fixed charge film directly on the surface of the substrate, a second fixed charge film directly on the first fixed charge film and an inner wall of the pixel isolation trench, and an insulating layer directly on the second fixed charge film, the insulating layer configured to fill the pixel isolation trench.. .
Samsung Electronics Co., Ltd.

Image sensors with light channeling reflective layers therein

An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein.
Samsung Electronics Co., Ltd.

Solid-state imaging device and manufacturing solid-state imaging device, and electronic device

A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.. .
Sony Corporation

Auto-focus image sensor

An auto-focus image sensor includes a substrate including unit pixels and having first and second surfaces facing each other, a pixel separation part passing through the substrate from the first surface to the second surface and separating the unit pixels from each other, at least one pair of photoelectric conversion parts provided in each of the unit pixels of the substrate, and a sub-pixel separation part provided in the substrate and interposed between the at least one pair of the photoelectric conversion parts. The second surface serves as a light-receiving surface..
Samsung Electronics Co., Ltd.

Semiconductor device and manufacturing method thereof

It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof.
Semiconductor Energy Laboratory Co., Ltd.

Solid-state imaging element and electronic device

The present disclosure relates to a solid-state imaging element and an electronic device capable of effectively inhibiting occurrence of reflection and diffraction of light on a light incident surface. A fine uneven structure including a recess and a protrusion is formed with a predetermined pitch on a light incident surface of a semiconductor layer in which photoelectric conversion sections are formed for a plurality of pixels; and an antireflective film is laminated on the fine uneven structure, the antireflective film being formed with a film thickness different for each color of light received by each of the pixels.
Sony Corporation

Image sensor

An image sensor includes n light receiving elements including first to n-th light receiving elements, each of the light receiving elements generating photoelectric conversion signals, n sequencers including first to n-th sequencers, each of the sequencers having both a sequencer input terminal to which a k-th horizontal control signal is input, and a sequencer output terminal from which a (k+1)-th horizontal control signal is output, and n switches including first to n-th switches, each of the switches having a switch input terminal to which a signal corresponding to the photoelectric conversion signal is input, a switch control terminal to which a k-th pixel control signal is input, and a switch output terminal which is electrically connected to the switch input terminal, wherein n is a natural number of 2 or more, and k is a natural number of 1 to n.. .
Olympus Corporation

Image-capturing device

An image-capturing device includes: a plurality of micro-lenses disposed in a two-dimensional pattern near a focal plane of an image forming optical system; an image sensor that includes a two-dimensional array of element groups each corresponding to one of the micro-lenses and made up with a plurality of photoelectric conversion elements which receive, via the micro-lenses light fluxes from a subject having passed through the photographic optical system and output image signals; and a synthesizing unit that combines the image signals output from the plurality of photoelectric conversion elements based upon information so as to generate synthetic image data in correspondence to a plurality of image forming areas present on a given image forming plane of the image forming optical system, the information specifying positions of the photoelectric conversion elements output image signals that are to be used for generating synthetic image data for each image forming area.. .
Nikon Corporation



Photoelectric Conversion topics:
  • Photoelectric Conversion
  • Electric Conversion
  • Semiconductor
  • Electronic Device
  • Conversion Efficiency
  • Semiconductor Substrate
  • Conductive Layer
  • Sensitizer
  • Transport Layer
  • Silicon Oxynitride
  • Incident Light
  • Image Processing
  • Control Unit
  • Transparent Electrode
  • Electrical Signal


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