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Photoelectric Conversion patents

      

This page is updated frequently with new Photoelectric Conversion-related patent applications.




 Image sensor, imaging method, and electronic apparatus patent thumbnailImage sensor, imaging method, and electronic apparatus
The present technology relates to an image sensor, an imaging method, and an electronic apparatus that are capable of improving the image quality. It includes a plurality of signal lines for reading signals from pixels including a photoelectric conversion element, each of the plurality of signal lines being provided for one column of pixels, and a fixing unit configured to fix the potential of the plurality of signal lines to a predetermined potential, is started.
Sony Corporation


 Photoelectric conversion device and imaging system patent thumbnailPhotoelectric conversion device and imaging system
A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit, a reset transistor, and an amplifier transistor that outputs a signal from the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode.
Canon Kabushiki Kaisha


 Photoelectric conversion device and imaging device patent thumbnailPhotoelectric conversion device and imaging device
Rings a, b, c, and d in the formula (1) are pyridine rings. Each of r1 to r11 in the formula (1) is one selected from the group consisting of hydrogen, a straight-chain alkyl group, a branched alkyl group, an aryl group, and an electron-withdrawing heteroaryl group..

 Solid-state imaging device,  manufacturing the same, and electronic apparatus patent thumbnailSolid-state imaging device, manufacturing the same, and electronic apparatus
A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged..
Sony Corporation


 Semiconductor device patent thumbnailSemiconductor device
A plurality of pixel regions are aligned in a matrix in a semiconductor substrate, and each of the plurality of pixel regions includes an active region, two photoelectric conversion elements, two floating capacitance regions, and a first transistor. Each of the plurality of pixel regions includes two transfer transistors each having each of the two photoelectric conversion elements and each of the two floating capacitance regions.
Renesas Electronics Corporation


 Apparatus and  acquiring image patent thumbnailApparatus and acquiring image
An image acquisition apparatus includes a color filter on which a plurality of types of color filter elements are arranged, an optical path modulation optical element configured to shift an incident position of an image on the color filter by electrically modulating an optical path of the image, and a photoelectric conversion cell array configured to acquire image information for each color by detecting, in pixel units, light which has passed through the color filter. A color image is obtained by acquiring, in a time division manner, the image information for each color of the image of which a position is changed by the optical path modulation optical element by using a detection signal of the photoelectric conversion cell array, and combining the acquired image information for each color..
Samsung Electronics Co., Ltd.


 Radiation imaging apparatus and  controlling radiation imaging apparatus patent thumbnailRadiation imaging apparatus and controlling radiation imaging apparatus
A radiation imaging apparatus that has a plurality of pixels capable of outputting an image signal in accordance with an irradiation of radiation comprises a photoelectric conversion unit which has a first capacitance and a second capacitance as charge accumulation capacitances and a gain correction unit configured to correct a pixel value in relation to a dose of the irradiated radiation based on an image signal outputted in accordance with a charge accumulated by the photoelectric conversion unit. The gain correction unit changes an interval of gain correction points at which to perform correction in accordance with a switch from a first capacitance to a second capacitance..
Canon Kabushiki Kaisha


 Imaging device patent thumbnailImaging device
An imaging device according to an aspect of the invention includes an imaging optical system (12) having a wide-angle optical system and a telephoto optical system which are provided in different regions, a directional sensor (17) that has a plurality of pixels including photoelectric conversion elements which are two-dimensionally arranged, pupil-divides light beams which are incident through the wide-angle optical system and the telephoto optical system, and selectively receives the beams, a pan/tilt mechanism (32) that moves a direction of an imaging optical axis of the telephoto optical system with respect to a direction of an imaging optical axis of the wide-angle optical system, and an image acquisition unit (22) that acquires a wide-angle image received from the directional sensor (17) through the wide-angle optical system and a telephoto image received from the directional sensor (17) through the telephoto optical system.. .
Fujifilm Corporation


 Image pickup apparatus and image pickup system patent thumbnailImage pickup apparatus and image pickup system
An image pickup apparatus performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with one another. In a first period in which a photoelectric conversion unit of at least one of the pixels stores charge, signals based on charges stored in holding units of the pixels are successively output to output lines.
Canon Kabushiki Kaisha


 Imaging device and imaging method patent thumbnailImaging device and imaging method
Provided is an imaging device including an imaging element having a first photoelectric conversion unit and a second photoelectric conversion unit, in which a light-receiving efficiency of the second photoelectric conversion unit is lower than a light-receiving efficiency of the first photoelectric conversion unit; an optics that guides a light flux from an object to the imaging element; and a control unit that selects a combination of the first photoelectric conversion unit and the second photoelectric conversion unit used for a motion image capturing and a static image capturing in accordance with a brightness of the object.. .
Canon Kabushiki Kaisha


Perylene-based materials for organic photoelectric conversion layers

The present disclosure relates to perylene-based molecules and their use in photoelectric conversion layer(s) and/or an organic or hybrid image sensor. The present disclosure also relates to absorption layer(s) and photoelectric conversion layer(s) comprising a molecule according to the present disclosure.
Sony Corporation

Imaging device, module, and electronic device

An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels.
Semiconductor Energy Laboratory Co., Ltd.

Image sensors

An image sensor includes a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer in the substrate, a floating diffusion region in the substrate at an edge of the active region, and a transfer gate on the active region. The transfer gate is in contact with a portion of the device isolation layer adjacent the active region..
Samsung Electronics Co., Ltd.

Image sensors using different photoconversion region isolation structures for different types of pixel regions

An image sensor includes a semiconductor substrate, a first pair of photoelectric conversion regions in a first pixel region of the substrate and a first isolation structure between the photoelectric conversion regions of the first pair of photoelectric conversion regions. The sensor further includes a second pair of photoelectric conversion regions in a second pixel region of the substrate adjacent the first pixel region and a second isolation structure between the photoelectric conversion regions of the second pair of photoelectric conversion regions and having different optical properties than the first isolation structure.
Samsung Electronics Co., Ltd.

Imaging device

In a preferred aspect of the invention, an imaging optical system having a wide-angle optical system and a telephoto optical system which are provided in different regions is provided. A directional sensor that has a plurality of pixels including photoelectric conversion elements which are two-dimensionally arranged pupil-divides light beams which are incident through the wide-angle optical system and the telephoto optical system, and selectively receives the light beams.
Fujifilm Corporation

Image sensor and fabricating the same

Provided is an image sensor having improved characteristics. An image sensor in accordance with an embodiment of the present invention may include first and second photoelectric conversion elements formed in a substrate, wherein the first photoelectric conversion element has a first impurity region; a device isolation trench formed in the substrate and between the first and the second photoelectric conversion elements, wherein a sidewall of the device isolation trench is in contact with the first impurity region; and an epitaxial layer filling the device isolation trench, and having different conductivity from the first impurity region..
Sk Hynix Inc.

Stacked image sensor

A stacked image sensor includes a first photoelectric conversion layer including a plurality of first photoelectric conversion regions; a second photoelectric conversion layer disposed on the first photoelectric conversion layer, and including a plurality of second photoelectric conversion regions; and a plurality of color filters disposed on the plurality of second photoelectric conversion regions, wherein at least one of the plurality of first photoelectric conversion regions includes a plurality of third photoelectric conversion regions that perform auto-focusing.. .
Samsung Electronics Co., Ltd.

Solid-state image pickup apparatus, and image pickup system using solid-state image pickup apparatus

A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit.
Canon Kabushiki Kaisha

Imaging element and imaging device

An imaging element according to the present disclosure includes: a first pixel and a second pixel each including a light receiving section and a light condensing section, in which the light receiving section includes a photoelectric conversion element, and the light condensing section is configured to allow entering light to be condensed toward the light receiving section; a trench provided between the first pixel and the second pixel; a first light shielding film embedded in the trench; and a second light shielding film provided on part of a light receiving surface of the light receiving section of the second pixel, in which the second light shielding film is continuous with the first light shielding film.. .
Sony Corporation

Solid-state imaging device, manufacturing method thereof, and electronic apparatus

A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.. .
Sony Corporation

Image sensor and manufacturing the same

An image sensor including a color splitter and a method of manufacturing the image sensor is provided. The image sensor includes a photoelectric conversion layer; a plurality of color filters disposed on the photoelectric conversion layer; a light transmission layer disposed on the photoelectric conversion layer and the plurality of color filters; and a color splitter that is disposed on the light transmission layer, comprises a top surface and a side surface exposed to ambient air, and is configured to transmit a portion of light incident on the color splitter toward a first pixel region and refract a remaining portion of the incident light toward second pixel regions adjacent to the first pixel region, according to a difference between a refractive index of the color splitter and a refractive index of the ambient air..
Samsung Electronics Co., Ltd.

Optical module

An optical module includes: a board configured to be equipped with an optical element that carries out photoelectric conversion; a flexible optical waveguide configured to guide light output from the optical element or light to be input to the optical element; and a chassis including: a housing part configured to house the board, and a passage configured to lead the flexible optical waveguide to outside of the housing part and bend in such a manner that one or more steps are formed along a wave guiding direction of the flexible optical waveguide.. .
Fujitsu Limited

Focus detection apparatus, controlling the same, and storage medium

A focus detection apparatus comprises a line sensor including a photoelectric conversion element and an integrating capacitor, a storage unit configured to store information concerning a defective pixel, a first comparison unit configured to compare a signal from the defective pixel with a predetermined threshold, a switching unit configured to switch between a first accumulation mode and a second accumulation mode, and a control unit configured to control the switching unit so as to set the line sensor in the first accumulation mode if the first comparison unit determines that a signal from the defective pixel is not more than the predetermined threshold and set the line sensor in the second accumulation mode if the first comparison unit determines that a signal from the defective pixel is larger than the threshold.. .
Canon Kabushiki Kaisha

Solid-state image sensor and electronic information device

Provided are a solid-state image sensor and an electronic information device capable of effectively reducing the occurrence of pseudo-smear by adopting a simple configuration and operation. A solid-state image sensor 1 includes multiple pixel circuit units pn and pob, each including a photoelectric conversion unit that generates charges via photoelectric conversion and accumulates the generated charges, a floating diffusion unit that retains charges transferred from the photoelectric conversion unit, a transfer unit through which charges accumulated by the photoelectric conversion unit are transferred to the floating diffusion unit, an output unit that outputs a signal corresponding to the amount of charges retained by the floating diffusion unit, and a reset unit that discharges charges retained by the floating diffusion unit to the outside; and an a/d conversion unit 23 that acquires a signal output from the output unit and performs a/d conversion on the acquired signal using a set gain.
Sharp Kabushiki Kaisha

Photoelectric conversion element, solid-state imaging device, organic light-absorbing material, and organic light-absorbing material intermediate

A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other, and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode 21 and the second electrode 22. The photoelectric conversion material layer 30 is formed of the following structural formula (1)..
Sony Corporation

Solar cell module

A solar cell module includes a first protection member being disposed on the light receiving surface side of the solar cell module and having transparency, a second protection member disposed on the rear surface side, and a string provided between the first protection member and the second protection member. The string includes a plurality of solar cells each having a plurality of finger electrodes, formed so as to be approximately parallel to each other on the rear surface of a photoelectric conversion part, a plurality of wiring members fitted to each of the solar cells, in a direction intersecting a plurality of finger electrodes and connecting the adjacent solar cells to each other, and the metal foils provided, on the rear surface side of the photoelectric conversion part, at the overlapping the wiring members..
Panasonic Intellectual Property Management Co., Ltd.

Solar cell module

A solar cell module includes a first protection member being disposed on the light receiving surface side of the solar battery and having transparency, a second protection member disposed on the rear surface side, and a string provided between the first protection member and the second protection member. The string includes a plurality of solar cells each having a plurality of finger electrodes, formed so as to be approximately parallel to each other on the rear surface of a photoelectric conversion part, a plurality of wiring members and a plurality of metal foils.
Panasonic Intellectual Property Management Co., Ltd.

Image sensor and fabricating the same

Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters.
Samsung Electronics Co., Ltd.

Solid-state image sensor, manufacturing the same, and camera

A solid-state image sensor includes a substrate including a photoelectric conversion portion, an insulating layer having an opening, and a member arranged inside the opening. Letting d be a depth of the opening, the opening has, at an upper end of the opening, a shape having a width in a first direction parallel to the surface of the substrate, and a width in a second direction parallel to the surface of the substrate and orthogonal to the first direction.
Canon Kabushiki Kaisha

Solid-state imaging device and camera

A solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.. .
Sony Corporation

Image sensor

Provided is an image sensor having improved performance. An image sensor in accordance with an embodiment of the present invention including a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each of the plurality of pixels may include: a photoelectric conversion element formed in a substrate; a transfer gate overlapping with a portion of the photoelectric conversion element and formed on the substrate; and a color filter over the photoelectric conversion element, wherein the plurality of pixels include two adjacent pixels which have the same color filter, and wherein one of the two adjacent pixels comprises an incident light control pattern..
Sk Hynix Inc.

Imaging device

A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view.
Semiconductor Energy Laboratory Co., Ltd.

Semiconductor apparatus, system, and manufacturing semiconductor apparatus

There is provided an image capturing apparatus including a pixel circuit that generates a pixel signal based on an electric charge generated by photoelectric conversion and a logic circuit that outputs a signal based on the pixel signal. The image capturing apparatus includes a first contact plug connected to a source or a drain of a first transistor constituting the pixel circuit and a second contact plug connected to a source or a drain of a second transistor constituting the logic circuit.
Canon Kabushiki Kaisha

Photosensitizer and photoelectric conversion device

A photosensitizer is a dye represented by the following formula (i) or its salt. In the following chemical formula, m represents an integer of 0 through 4, and n represents an integer of 0 or 1, and p represents an integer of 0 to 2.
Chemicrea Inc.

Photoelectric conversion element, dye-sensitized solar cell, metal complex dye, dye solution, and terpyridine compound or esterified product thereof

Nvl represents an integer of 0 or more.. .

Photoelectric conversion element, dye-sensitized solar cell, metal complex dye, and dye solution

In the formulae, rv1 and rv2 each independently represent a nitrogen atom or crv4, rv4 represents a hydrogen atom or a substituent, rv31 represents a fused polycyclic aromatic ring group or a fused polycyclic heterocyclic group, and rv32 represents a fused polycyclic aromatic ring group or a heteroaryl group.. .

Photoelectric conversion element

Provided is a photoelectric conversion element including: a first electrode; a hole blocking layer; an electron transport layer; a hole transport layer; and a second electrode, wherein the hole blocking layer includes a metal oxide including a titanium atom and a niobium atom.. .
Ricoh Company, Ltd.

Optical module and making optical module

An optical module for connecting between an optical fiber and a photoelectric conversion device mounted on a printed circuit board includes a main body made of transmissive material and having a slanted face and a bottom face, the slanted face being at an angle to the bottom face, a reception-purpose lens, and a transmission-purpose lens, wherein the slanted face serves as a mirror on an optical path extending in the main body between the reception-purpose lens and the transmission-purpose lens.. .
Fujitsu Limited

Image capturing device

An image capturing device includes a pixel array having a plurality of pixels arranged in a matrix form, wherein each of the pixels includes a pair of photoelectric conversion devices, an analog to digital converter that converts a pair of pixel signals corresponding to charges accumulated in the pair of photoelectric conversion devices included in each of the pixels into a pair of digital signals, and a circuit receiving the pair of digital signals being output from each of the pixels, detecting a pixel including a photoelectric conversion device outputting a saturation current based on the received pairs in the detected pixel to output a correction signal.. .
Samsung Electronics Co., Ltd.

Solid-state imaging device and electronic apparatus

A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction..
Sony Corporation

Solid-state image pickup device and camera system

A solid-state image pickup device includes a pixel unit in which a plurality of photoelectric conversion elements having different sensitivities are arranged; and a pixel reading unit configured to read and add output signals from the plurality of photoelectric conversion elements in the pixel unit, and to obtain an output signal seemingly from one pixel. The pixel unit includes an absorbing unit configured to absorb overflowing electric charge from a photoelectric conversion element with a high sensitivity..
Sony Corporation

Photoelectric device and electronic apparatus including the same

Provided are photoelectric devices and electronic apparatuses including the photoelectric devices. A photoelectric device may include a photoactive layer, the photoactive layer may include a nanostructure layer configured to generate a charge in response to light and a semiconductor layer adjacent to the nanostructure layer.
Samsung Electronics Co., Ltd.

Solid-state imaging device and camera

A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for other element isolation regions than the shallow trench element isolation region..
Sony Corporation

Solid-state imaging device, manufacturing a solid-state imaging device, and electronic apparatus

Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern.
Sony Corporation

Solid-state imaging devices with enhanced angular response

A solid-state imaging device includes a substrate containing a plurality of photoelectric conversion elements arranged into a pixel array. A color filter layer including a plurality of color filter segments is disposed above the photoelectric conversion elements.
Visera Technologies Company Limited

Solid-state imaging device and electronic apparatus

A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.. .
Sony Semiconductor Solutions Corporation

Imaging device and imaging system

The imaging device performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with each other. In a first period during which a photoelectric conversion portion of at least one of the pixels accumulates an electric charge, signals based on electric charges held in holding portions of the plurality of pixels are sequentially output to an output line.
Canon Kabushiki Kaisha

Image device, image system, and control image device

An image device transfers charges of a previous frame from the holding units to the amplification units, during a read-out period of each frame, the read-out period includes a period in which a plurality of overflow transistors are in an on-state and a first period in which a plurality of photoelectric conversion units accumulate charges, and, during a second period following the first period, the plurality of photoelectric conversion units of the plurality of pixels accumulate charges while the plurality of holding units of the plurality of pixels hold the charges accumulated during the first period. During the first and second periods, each of the plurality of pixels performs a plurality of times of charge transfers from the photoelectric conversion unit to the holding unit.
Canon Kabushiki Kaisha

Imaging device and imaging system

An imaging device includes pixels including a photoelectric conversion unit, a holding unit that holds charge, and an amplifier unit. The pixels include a first group outputting a signal based on charge generated during a first exposure period, and a second group outputting a signal based on charge generated during a second exposure period longer than the first exposure period.
Canon Kabushiki Kaisha

Imaging device and imaging system

An imaging device includes pixels including a photoelectric conversion unit, a holding unit holding charge transferred from the photoelectric conversion unit, and an amplifier unit outputting signal based on the charge. The pixels output a first signal based on charge generated in a first exposure period and a second signal based on charge generated in a second exposure period of different length.
Canon Kabushiki Kaisha

Thermal emission source and two-dimensional photonic crystal for use in the same emission source

A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer..
Japan Science And Technology Agency

Active antenna associated device and system, and transmitting and receiving calibration method

An active antenna associated device and system, and a transmitting and receiving calibration method, used for implementing extensible design of an antenna array, reducing construction implementation difficulty, and ensuring construction implementation reliability. The active antenna unit comprises: n active antenna arrays, a main calibration coupling circuit unit, a transmitting and receiving calibrating unit, a calibration parameter storage unit, and a radio over fiber (rof) photoelectric conversion unit, wherein n is larger than 1.
China Academy Of Telecommunications Technology

Photovoltaic cell module

In accordance with one embodiment, there is provided a photovoltaic cell module including a plurality of photovoltaic cell structures including a hole transport layer and an electron transport layer which are disposed on a common photoelectric conversion layer so that electromotive force polarities are alternately different, wherein the photovoltaic cell structures are electrically connected in series.. .
Kabushiki Kaisha Toshiba

Organic photoelectric conversion device

According to one embodiment, an organic photoelectric conversion device includes: an organic photoelectric conversion layer, a metal-oxide layer, and a buffer layer. The metal-oxide layer includes metal oxide.
Kabushiki Kaisha Toshiba

Photoelectric conversion element, solid-state imaging device, and organic light-absorbing material

A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode and the second electrode. The photoelectric conversion material layer contains a substance formed of the following structural formula (1)..
Sony Corporation

Photoelectric conversion material dispersion liquid and producing method thereof, producing method and producing apparatus of photoelectric conversion film, and photoelectric conversion device

A photoelectric conversion material dispersion liquid of an embodiment includes: perovskite crystal particles having a composition represented as abx3, where a is a monovalent cation of an amine compound, b is a divalent cation of a metal element, and x is a monovalent anion of a halogen element, and having an average particle diameter of not less than 10 nm nor more than 10000 nm; and a dispersion medium which is composed of a poor solvent to the perovskite crystal particles, and in which the perovskite crystal particles are dispersed.. .
Kabushiki Kaisha Toshiba

Compound-semiconductor photovoltaic cell and manufacturing compound-semiconductor photovoltaic cell

A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell made of a first compound-semiconductor material which lattice matches with gaas or ge; a first tunnel junction layer arranged on a deep side farther than the first photoelectric conversion cell in a light incident direction, and including a first p-type (alx1ga1-x1)y1in1-y1as (0≦x1<1, 0<y1≦1) layer and a first n-type (alx2ga1-x2)y2in1-y2p (0≦x2<1, 0<y2<1) layer; and a second photoelectric conversion cell arranged on a deep side farther than the first tunnel junction layer in the light incident direction, and made of a second compound-semiconductor material which is a gaas-based semiconductor material. The first photoelectric conversion cell and the second photoelectric conversion cell are joined via the first tunnel junction layer, and a lattice constant of the first n-type (alx2ga1-x2)y2in1-y2p layer is greater than a lattice constant of the first photoelectric conversion cell..
Rich Company, Ltd.

Photoelectric conversion element, solar cell, solar cell module, and solar power generating system

A photoelectric conversion element of an embodiment includes a substrate, a transparent first electrode on the substrate, a second electrode, and a light absorbing layer of a homo-junction type interposed between the first electrode and the second electrode. The light absorbing layer includes a p-type region on the second electrode side and an n-type region on the first electrode side.
Kabushiki Kaisha Toshiba

Photoelectric conversion element, solar battery, solar battery module, and solar power generation system

A photoelectric conversion element of an embodiment includes a first electrode, a second electrode, and a light-absorbing layer containing a chalcopyrite-type compound containing a group ib element, a group iiib element, and a group vib element between the first electrode and the second electrode. A region in which concentration of the group ib element in the light-absorbing layer is from 0.1 to 10 atom %, both inclusive, is included in a region up to a depth of 10 nm in a direction from a principal plane of the light-absorbing layer on a side of the second electrode to a side of the first electrode..
Kabushiki Kaisha Toshiba

Image sensor device

Image sensor devices of related art have a problem that an auto-focus accuracy deteriorates due to crosstalk of electrons between a plurality of photodiodes formed below one microlens. According to one embodiment, at least some of a plurality of pixels in an image sensor device include: first and second photoelectric conversion elements (pd_l, pd_r) that are formed on a semiconductor substrate below one microlens (45); and a potential barrier (34) that inhibits transfer of electric charges between at least a part of a lower region of the first photoelectric conversion element (pd_l) and at least a part of a lower region of the second photoelectric conversion element (pd_r) in a depth direction of the semiconductor substrate..
Renesas Electronics Corporation

Solid-state image sensor and image pickup apparatus

A solid-state image sensor comprising a plurality of pixels including photoelectric conversion elements arranged in matrix and an microlens array in which a plurality of microlenses respectively corresponding to the plurality of pixels are arranged, wherein a first group including microlenses each having a first shape and a second group including microlenses each having a second shape different from the first shape are arranged in the microlens array, and a center of a region in which the microlenses constituting the first group is shifted from a center of an effective pixel region of the image sensor, and a region in which the microlenses constituting the second group are arranged includes two portions arranged to sandwich the entire first group.. .
Canon Kabushiki Kaisha

Image pickup device and manufacturing image pickup device

An image pickup device having a pixel region in which pixels are arranged, and in which a multilayer wiring structure is disposed. Each pixel includes a photoelectric conversion unit, a charge accumulation unit, a floating diffusion, a light shielding portion covering the charge accumulation unit and opening above the photoelectric conversion unit, and a waveguide which overlaps at least partially a portion at which the light shielding portion opens in a plan view.
Canon Kabushiki Kaisha

Solid-state image pickup device and image pickup system

A solid-state image pickup device has an image pickup pixel including a first photoelectric conversion portion and a first transistor and a focus detection pixel including a second photoelectric conversion portion, a second transistor, and a light shielding portion, in which a reflection preventing portion is provided on the underface side of the light shielding portion.. .
Canon Kabushiki Kaisha

Image sensor and image pickup apparatus including the same

An image sensor includes a plurality of pixels. Each of the plurality of pixels includes a microlens, a waveguide unit having a core and a cladding and capable of propagating light transmitted through the microlens, and a pair of photo diodes and configured to carry out photoelectric conversion of light guided by the waveguide unit.
Canon Kabushiki Kaisha



Photoelectric Conversion topics:
  • Photoelectric Conversion
  • Electric Conversion
  • Semiconductor
  • Electronic Device
  • Conversion Efficiency
  • Semiconductor Substrate
  • Conductive Layer
  • Sensitizer
  • Transport Layer
  • Silicon Oxynitride
  • Incident Light
  • Image Processing
  • Control Unit
  • Transparent Electrode
  • Electrical Signal


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