|| List of recent Photoelectric Conversion-related patents
| Oral care apparatus applied to the removal of dental plaque|
An oral care apparatus includes: a care member; an orientation detection unit; an area estimation unit; a light source that emits light having a predetermined wavelength to which plaque reacts; a photoelectric conversion unit that receives light and converts the received light into an electric signal; an image capture unit that causes the light source to irradiate the care area with light, and that obtains image data, based on the electric signal of light reflected from the care area that is converted by the photoelectric conversion unit; a plaque detection unit for detecting an amount of plaque in the care area, based on the image data obtained by the image capture unit; and a storage unit for storing, in a memory, the care area estimated by the area estimation unit and the amount of plaque in the care area detected by the plaque detection unit in association with each other.. .
| Photoelectric conversion device and optical fiber coupling connector|
A photoelectric conversion device includes a circuit board, light-emitting modules arranged on the circuit board in a first straight line, light-receiving modules arranged on the circuit board in a second straight line, and an optical coupling module. The optical coupling module includes a first optical surface, a second optical surface perpendicular to the first optical surface, a reflecting surface obliquely relative to the first and second optical surfaces, first converging lenses arranged on the first optical surface in a third straight line, second converging lenses arranged on the first optical surface in a fourth straight line, third converging lenses arranged on the second optical surface in a fifth straight line, and fourth converging lenses arranged on the second optical surface in a sixth straight line.
| Imaging device|
The present invention is to correctly perform auto focus operation with various subjects. An imaging device (10) that images a subject includes a focus lens group (16) that collects a light beam from the subject and forms an image of the subject, a focus motor (13) that drives the focus lens group (16) in the optical axis direction, and an imaging element (30) that performs photoelectric conversion of the light beam and outputs a video signal.
| Image pickup apparatus, remote control apparatus, and methods of controlling image pickup apparatus and remote control apparatus|
An image pickup apparatus includes an image pickup device which generates an image signal by performing photoelectric conversion on an optical image via an optical system, an object detector which detects a plurality of object images based on the image signal obtained from the image pickup device, an identification information generator which allocates identification information to each of the object images, a communicator which sends the image signal and the identification information allocated to each of the object images to an outside of the image pickup apparatus, wherein the communicator is capable of receiving identification information of an object image relating to the sent identification information of the object image, and a controller configured to specify a main object image among the object images detected by the object detector based on the received identification information.. .
| Image pickup apparatus, remote control apparatus, and methods of controlling image pickup apparatus and remote control apparatus|
An image pickup apparatus, adapted to be used with a remote control apparatus external to the image pickup apparatus, includes an image pickup unit for performing photoelectric conversion on a captured image to generate a first image signal representing the captured image, a communicator operable to send the generated first image signal to the remote control apparatus, and further operable to receive from the remote control apparatus a second image signal relating to the sent first image signal, and a controller operable to use the received second image signal to detect a target object in a further captured image represented by a third image signal generated by the image pickup unit subsequently to the first image signal.. .
| Sensing pixel and image sensor including same|
A depth-sensing pixel included in a three-dimensional (3d) image sensor includes: a photoelectric conversion device configured to generate an electrical charge by converting modulated light reflected by a subject; a capture transistor, controlled by a capture signal applied to the gate thereof, the photoelectric conversion device being connected to the drain thereof; and a transfer transistor, controlled by a transfer signal applied to the gate thereof, the source of the capture transistor being connected to the drain thereof, and a floating diffusion region being connected to the source thereof.. .
| Wide area array type photonic crystal photomixer for generating and detecting broadband terahertz wave|
Provided is a broadband photomixer technology that is a core to generate continuous frequency variable and pulsed terahertz waves. It is possible to enhance light absorptance by applying the transmittance characteristic of a 2d light crystal structure and it is possible to increase the generation efficiency of terahertz waves accordingly.
A color filter has a transmission band in a visible region and an infrared region. A first substrate is arranged below the color filter and has a first photoelectric conversion element which outputs a first signal charge according to an amount of exposure of a light passing through the color filter.
|Image capturing apparatus and method for controlling the same|
An image capturing apparatus comprises: an image sensor that includes a plurality of pixels, each including a plurality of photoelectric conversion elements; a readout unit that reads out a signal from a portion of the photoelectric conversion elements of each pixel as a first signal and reads out a sum of signals from the plurality of photoelectric conversion elements of each pixel as an image signal; a generation unit that generates a second signal for each pixel using the image signal and the first signal; and a calculation unit that calculates a moving amount of a focus lens for achieving an in-focus state based on a phase difference between the first signal and the second signal. The calculation unit performs the calculation without using a signal from a defective line..
|Imaging apparatus and method for controlling same|
An imaging apparatus includes an imaging element including a pixel portion having a plurality of photoelectric conversion units with respect to one micro lens and color filters which are regularly arranged for each micro lens. The imaging apparatus generates a first signal and a second signal for phase difference-type focus detection based on an output of the imaging element.
|Image pickup device, method of manufacturing same, and electronic apparatus|
An image pickup device with a plurality of pixels, each of the pixels includes: a photoelectric conversion section formed in a semiconductor substrate; and a metallic member formed between the semiconductor substrate and a wiring layer provided in a layer on the semiconductor substrate, a part of the metallic member being configured to serve as a light-shielding member that blocks a part of light to be incident on the photoelectric conversion section.. .
|Image pickup apparatus, image pickup system and driving method of image pickup apparatus|
An image pickup apparatus of an embodiment includes pixel units each including a photoelectric conversion unit and an amplification transistor that outputs a signal based on an electric carrier generated by the photoelectric conversion unit, a first output line to which signals from first and other pixel units are output, and a second output line to which signals from second and other pixel units are output. A connection unit is arranged to control an electric connection between input nodes of the amplification transistors of the first and second pixel units is arranged.
|Organic photoelectric conversion element and organic solar cell using the same|
An organic photoelectric conversion element having: a transparent first electrode; a power generation layer having a p-type organic semiconductor material and an n-type organic semiconductor material; and a second electrode, on a transparent substrate, in which the power generation layer is a bulk heterojunction power generation layer including the p-type organic semiconductor material and the n-type organic semiconductor material, and additionally includes a compound represented by either the following general formula (i) or general formula (ii).. .
|Solar cell and method for manufacturing solar cell|
A solar cell is provided with: a photoelectric conversion unit; terminal sections for plating, which are formed on the light receiving surface of the photoelectric conversion unit; and a plated electrode formed on the light receiving surface by means of electrolytic plating using the terminal sections for plating. The terminal sections for plating are formed at positions separated from wiring material connecting sections of the plated electrode, said positions being on the light receiving surface.
|Solar cell, solar cell module, and method for manufacturing solar cell module|
A solar module and a manufacturing method for a solar module with improved reliability are provided. The solar module includes a solar cell and a wiring member.
|Chemical bath deposition apparatus, method of forming buffer layer and method of manufacturing photoelectric conversion device|
A chemical bath deposition apparatus includes: a reaction vessel for containing a reaction solution for chemical bath deposition to form a film on a surface of a substrate; a substrate holding section for holding the substrate such that at least the surface of the substrate contacts the reaction solution, the substrate holding section including a fixing surface made of stainless steel on which a back side of the substrate is closely fixed; a heater disposed at a rear side of the fixing surface, the heater heating the substrate from the back side of the substrate; and a reaction solution temperature control unit for controlling temperature of the reaction solution in the reaction vessel.. .
|Photoelectric conversion device and optical fiber coupling connector|
A photoelectric conversion device includes a circuit board, light emitting modules, light receiving modules, and an optical coupling lens. The light emitting modules and the light receiving modules are mounted on the circuit board.
|Photoelectric conversion device, image pickup system, and driving method of photoelectric conversion device|
A photoelectric conversion device includes analog signal output units including pixels and configured to output analog signals based on pixels, and signal processing units. Each of the signal processing units is provided correspondingly to one of the analog signal output units and including a gain application unit configured to apply a gain to an analog signal by using only passive elements and an ad conversion unit.
|Photoelectric conversion device, image pickup system, and driving method of photoelectric conversion device|
A photoelectric conversion device includes analog signal output units including pixels and configured to output analog signals based on pixels, and signal processing units. Each of the signal processing units is provided correspondingly to one of the analog signal output units and includes a gain application unit configured to apply a gain to an analog signal and an ad conversion unit.
|Photoelectric conversion device and imaging apparatus having the photoelectric conversion device|
A photoelectric conversion device includes visible-light filters, infrared light filters, pixels arrayed in a row direction and a column direction, and wiring layers disposed between the pixels and visible-light filters and infrared light filters. The pixels include first pixels disposed corresponding to the visible-light filters, and second pixels disposed corresponding to the infrared light filters.
|Solid-state imaging device, driving method thereof, and electronic device|
A solid-state imaging device including a pixel region in which a plurality of pixels are arranged. The pixels each includes a photoelectric conversion section, a transfer transistor, a plurality of floating diffusion sections receiving a charge from the photoelectric conversion section through the transfer transistor, a reset transistor resetting the floating diffusion sections, a separating transistor performing on-off control of a connection between the plurality of floating diffusion sections, and an amplifying transistor outputting a signal corresponding to a potential of the floating diffusion sections..
|Image sensor and method of manufactuing the same|
An image sensor and a method of manufacturing the same. The image sensor includes a plurality of photoelectric conversion units that are horizontally arranged and selectively emit electric signals by absorbing color beams..
|Photoelectric conversion module|
A photoelectric conversion module includes a lens unit, a circuit board, and a photoelectric unit. The lens unit is positioned on the circuit board.
|Photoelectric conversion element|
A photoelectric conversion element according to an embodiments includes: a first metal layer; a semiconductor layer formed on the first metal layer; a second metal layer formed on the semiconductor layer, the second metal layer comprising a porous thin film with a plurality of openings each having a mean area not smaller than 80 nm2 and not larger than 0.8 μm2 or miniature structures having a mean volume not smaller than 4 nm3 and not larger than 0.52 μm3; and a wavelength converting layer formed between the semiconductor layer and the second metal layer, at least a refractive index of a portion of the wavelength converting layer being lower than a refractive index of a material of the semiconductor layer, the portion being at a distance of 5 nm or shorter from an end portion of the second metal layer.. .
|Solar cell and production method for solar cell|
A solar cell, comprising: a photoelectric conversion unit; a transparent conductive layer comprising a transparent conductive oxide, and formed upon the main surface of the photoelectric conversion unit; and a finger section and a bus bar section that are formed upon the transparent conductive layer. The transparent conductive layer has particles on a contact surface where the finger section and the bus bar section are formed.
|Concentrating solar cell module and method for producing concentrating solar cell module|
The present invention provides a concentrating solar cell module comprising: a base portion having a plurality of mounting regions for mounting solar cells and a plurality of lead electrodes for electrically connecting the solar cells with external electrodes; a support molded with a thermosetting resin such that each of the mounting regions of the base portion is surrounded; the solar cells mounted on the mounting regions; and a condensing lens molded above the mounting regions so as to encapsulate the solar cells, wherein a surface of the mounting regions of the base portion is plated and the condensing lens is molded with a transparent thermosetting silicone resin. The concentrating solar cell module has high heat dissipation properties and a high photoelectric conversion efficiency..
|Method for producing photoelectric conversion element and method for producing imaging device|
The method produces a photoelectric conversion element comprising a lower electrode, an electron blocking layer, a photoelectric conversion layer, an upper electrode, and a sealing layer which are laminated on one another in this order. The method includes a step of forming a transparent conductive oxide into a film at a deposition rate of 0.5 Å/s or higher by a sputtering method to form the upper electrode having a stress of −50 mpa to −500 mpa on the photoelectric conversion layer..
|Photoelectric conversion device and optical fiber coupling connector|
A photoelectric conversion device includes a circuit board, light-emitting modules, light-receiving modules, an optical coupling module, and a lens strip. The light-emitting modules and the light-receiving modules are mounted on the circuit board.
|Image pickup apparatus|
The image pickup apparatus includes: a first imaging sensor in which pixels including photoelectric conversion units are arranged two-dimensionally; a second imaging sensor in which pixels including photoelectric conversion units are arranged two-dimensionally, each pixel including one micro lens, and a first and a second photoelectric conversion units; a light beam splitting unit for splitting a flux of light entering an optical system into fluxes of light entering the first and the second imaging sensors separately; a first image processing unit for processing signals from the first imaging sensor, the first image processing unit generating a still image based on signals from the first imaging sensor; and a second image processing unit for processing signals from the second imaging sensor, the second image processing unit generating signals usable for focal point detection of a phase difference method and generating a moving image based on signals from the second imaging sensor.. .
|Solid-state imaging device and digital camera|
A solid-state imaging device comprises first pixels and second pixels. The first pixel has a first pd and a first photoelectric conversion film.
|Solid-state imaging device, method of controlling solid-state imaging device, and imaging device|
In the solid-state imaging device, first and second substrates are electrically connected to each other via connectors electrically connecting the first and second substrates. A photoelectric conversion element is disposed in the first substrate.
|Semiconductor image sensor module and method of manufacturing the same|
A cmos type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an a/d converter array.
|Photoelectric conversion element, method for manufacturing the same, electronic apparatus, counter electrode for photoelectric conversion element, and architecture|
Provided are a counter electrode, which is excellent in electrolytic solution resistance and electrical conductivity, and which is capable of corresponding to an application process carried out by pattern printing during a manufacturing process, a photoelectric conversion element using the counter electrode, and a method for manufacturing the same. A dye-sensitized photoelectric conversion element has a structure in which an electrolyte layer is filled between a porous electrode to which a photosensitizing dye is adsorbed and a counter electrode.
|Thin film photovoltaic cell and method of manufacture of same|
A thin film photovoltaic cell has an insulating substrate divided into a plurality of unit cells by alternately forming patterning lines in layers stacked on two faces of the insulating substrate; a rear face electrode layer, a photoelectric conversion layer, and a transparent electrode layer stacked in order on one face of the insulating substrate accordingly; and a back face electrode layer deposited on the other face of the insulating substrate. The photovoltaic cell further has a first penetrating hole penetrating the insulating substrate to electrically connect the transparent electrode layer and the back face electrode layer; a second penetrating hole penetrating the insulating substrate to electrically connect the rear face electrode layer and the back face electrode layer; and a transparent electrode layer removal portion in which the transparent electrode layer at least in a region surrounding the second penetrating hole is removed by an ultraviolet pulsed laser..
|Solar cell and method of manufacturing the same|
A solar cell includes a first photoelectric conversion unit based on crystalline semiconductor, a second photoelectric conversion unit on the first photoelectric conversion unit and including a plurality of conversion portions based on amorphous semiconductor, a bonding layer disposed between the first and second photoelectric conversion units to connect the first photoelectric conversion unit to the second photoelectric conversion unit, and electrodes electrically connected respectively to the first and second photoelectric conversion units.. .
|Production method of hole blocking layer, hole blocking layer, photoelectric conversion element, photoelectric conversion device, organic thin-film solar cell panel, and light-emitting device|
A production method of a hole blocking layer includes: a liquid layer forming step that causes a liquid composition and a surface of a member on which the hole blocking layer is to be formed, to contact with each other thereby forming a liquid layer comprising the liquid composition on the surface of the member on which the hole blocking layer is to be formed, the liquid composition containing a zinc source comprising bis(acetylacetonato)zinc, a complexing agent comprising acetylacetone, and a polar solvent; and a drying step that heats the liquid layer formed by the liquid layer forming step to vaporize the complexing agent and the polar solvent from the liquid layer thereby forming a hole blocking layer comprising zinc oxide on the surface of the member on which the hole blocking layer is to be formed.. .
|Image forming apparatus|
An image forming apparatus includes: an image reading mechanism configured to read an image from a document; an image forming mechanism configured to print the image read by the image reading mechanism on a recording sheet; and an image inspection mechanism configured to read the image printed on the recording sheet in the image forming mechanism. The image reading mechanism and the image inspection mechanism each include: a light source configured to irradiate a reading target with light; and a solid-state image sensing device on which reflected light from the reading target is made incident, and configured to perform photoelectric conversion operation.
|Photoelectric conversion device and camera|
A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.. .
|Solid-state imaging apparatus|
An object is to provide a solid-state imaging apparatus capable of causing driving signals of pixels to reach the entire screen and of driving all the pixels. The solid-state imaging apparatus includes a pixel region including a plurality of pixels therein, each pixel having a photoelectric conversion element and at least one transistor, and a plurality of driving lines, each driving each of the plurality of transistors arranged in the pixel region, wherein the driving line supplies a driving signal through a buffer arranged in the pixel region to the transistor, and the number of the buffers is smaller than the number of the pixels..
|Photoelectric conversion apparatus and image pickup system|
A photoelectric conversion apparatus includes signal processing units having a plurality of analog-to-digital converters, a first output unit having a plurality of first output terminals and include first output blocks provided in correspondence with the first output terminals, and a second output unit having one or more second output terminals and include second output blocks provided in correspondence with the second output terminals.. .
|Solid state image sensor|
A solid state image sensor has a plurality of ranging pixels on the imaging area thereof and each of the ranging pixels has a photoelectric conversion section and an optical waveguide arranged at the light-receiving side of the photoelectric conversion section. The optical waveguide has at least two optical waveguides including a first optical waveguide arranged at the light-receiving side and a second optical waveguide arranged at the side of the photoelectric conversion section in the direction of propagation of light.
|Solid-state imaging apparatus, method of manufacturing solid-state imaging apparatus, and electronic apparatus|
A solid-state imaging apparatus includes a transfer gate electrode formed on a semiconductor substrate; a photoelectric conversion unit including an electric charge storage area that is formed from a surface side of the semiconductor substrate in a depth direction, a transfer auxiliary area formed of a second conductive type impurity area that is formed in such a manner as to partially overlap the transfer gate electrode, and a dark current suppression area that is a first dark current suppression area formed in an upper layer of the transfer auxiliary and formed so as to have positional alignment in such a manner that the end portion of the transfer auxiliary area on the transfer gate electrode side is at the same position as the end portion of the transfer auxiliary area; and a signal processing circuit configured to process an output signal output from the solid-state imaging apparatus.. .
|Block copolymer and photoelectric conversion element|
Provide are: a conjugated block copolymer capable of increasing the amount of optical absorption by a photoelectric conversion active layer and controlling the morphology thereof and capable of achieving excellent photoelectric conversion efficiency; and a photoelectric conversion element comprising a composition including an electron accepting material and this kind of conjugated block polymer. A π-electron conjugated block copolymer comprising: a polymer block (a) which involving a monomer unit having at least one heteroaryl skeleton selected from the group consisting of a fused π-conjugated skeleton, a fluorene, a carbazole, a dibenzosilole and a dibenzogermole containing at least one thiophene ring in a part of a chemical structure thereof; and a polymer block (b) involving a monomer unit of a thiophene-2,5-diyl group having a substituent at least at a 3-position thereof..
|Sensing apparatus and the pixel structure thereof|
A pixel structure includes a first photoelectric conversion layer, a second photoelectric conversion layer, a blocking layer, a first electronic element layer and a second electronic element layer. The first photoelectric conversion layer converts a first energy portion of an x-ray into a first electrical signal and the second photoelectric conversion converts a second energy portion thereof into a second electrical signal.
|Solid-state imaging apparatus and driving method thereof, manufacturing method of solid-state imaging apparatus, and electronic information device|
A solid-state imaging apparatus 100a comprises: photoelectric conversion elements pd1 and pd2 formed within a first conductivity type semiconductor substrate 100; and transfer transistors tt1 and tt2 formed on a first main surface of the semiconductor substrate 100, for transferring the signal charge generated by the photoelectric conversion elements outside the photoelectric conversion elements. The gate electrode 107 of each of the transfer transistors is configured to be disposed over a surface of a first main surface side of an electric charge accumulating region 102, which configures each of the photoelectric conversion elements pd1 and pd2.
|Analog-digital converter, solid-state image sensor, and electronic apparatus|
An analog-digital converter includes: a first comparator configured to make a comparison between a pixel voltage and a first reference voltage, the pixel voltage being a signal voltage outputted from a pixel including an photoelectric conversion element, the pixel voltage corresponding to electric charge generated by the photoelectric conversion element; a second comparator configured to make a comparison between the pixel voltage and a second reference voltage; and a voltage follower configured to connect an input terminal for the first reference voltage of the first comparator and an input terminal for the second reference voltage of the second comparator through a switch.. .
|Photoelectric conversion element|
A dye-sensitized solar cell comprises a pair of electrodes that face each other; an electrolyte that is disposed between the pair of electrodes; and a sealing section that connects the pair of electrodes and is provided around the electrolyte. In the dye-sensitized solar cell, the sealing section comprises at least one corner section when the sealing section is viewed in planar view from the electrode side, and a first contact surface at the corner section with at least one of the pair of electrodes comprises a first curve line-containing surface containing a curved curve line on the electrolyte side..
|Solar module and manufacturing method therefor|
Provided is a solar module having improved photoelectric conversion efficiency and a method for producing this solar module. The wiring (32) has a first linear portion (32a) and a second linear portion (32b).
|Interference measuring apparatus and interference measuring method|
An interference measuring apparatus measuring a distance to a surface for inspection is provided. The interference measuring apparatus includes a light dividing unit that divides each of the plurality of light fluxes into light to be inspected and reference light; an objective lens that transmits light to be inspected; a photoelectric conversion element that receives interference light between the light to be inspected and the reference light for each of the plurality of light fluxes and output an interference signal obtained by converting the interference light into an electrical signal; and a calculation unit that calculates the distance to the surface to be inspected based on a phase obtained by subtracting a defocused wavefront from a phase component of a complex amplitude at the pupil position of the objective lens which transmitted light to be inspected for each of the plurality of light fluxes by using the interference signal..
|Image pickup device, control method, and image pickup apparatus|
An image pickup apparatus of the present disclosure includes a pixel array in which incident light of an object is photoelectrically converted by a photoelectric conversion element at each of a plurality of pixels arranged in a matrix form, a selection unit that selects the number of a/d converters that output a pixel signal of each pixel in the pixel array, and a control unit that controls the selection unit and causes the selection unit to select the number of the a/d converters according to a request. The present disclosure can be applied to an image pickup device, a control method, and an image pickup apparatus..
|Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus|
Image sensors, electronic apparatuses, and methods of manufacturing an image sensor are provided. More particularly, an image sensor having a plurality of photoelectric conversion elements included in a laminated body is provided.
|Detection apparatus for light-emitting diode chip|
A detection apparatus for light-emitting diode chip comprising a substrate with the function of photoelectric conversion and a probing device is disclosed. The substrate is designed to bear at least one light-emitting diode chip.
|Semiconductor apparatus and electronic apparatus|
A semiconductor apparatus includes a first semiconductor chip, a second semiconductor chip, and a flare prevention plate. On the first semiconductor chip, a photoelectric conversion unit configured to perform photoelectric conversion on light received in a light receiving area is formed.
|Imaging device and imaging display system|
According to an aspect, an imaging device includes: a plurality of pixels each including a photoelectric conversion element and arranged on a same plane; a transparent electrode provided on a surface of the photoelectric conversion element; a plurality of first conductors, each of which is electrically coupled to the transparent electrode corresponding to one photoelectric conversion element at a plurality of points and provided to the transparent electrode corresponding to one photoelectric conversion element; and a second conductor that is provided between adjacent pixels and electrically couples the first conductors, and also electrically couples the first conductors between the adjacent pixels.. .
|Photoelectric conversion element and method of using the same, image sensor, and optical sensor|
A photoelectric conversion element includes a transparent conductive film, a conductive film, and a photoelectric conversion layer and an electron-blocking layer disposed between the transparent conductive film and the conductive film. The photoelectric conversion layer includes a condensed polycyclic hydrocarbon which contains at least 5 benzene rings, of which a total number of rings is 7 or more and which contains no carbonyl group.
|Phthalocyanine nanorod and photoelectric conversion device|
Since an ink composition containing a nanorod according to the present invention can be formed into a film by a wet process such as a coating method or a printing method, an electronic device that is less likely to fail and is lightweight and inexpensive can be produced on a flexible plastic substrate.. .
|Light-absorbing material and photoelectric conversion element using the same|
There is provided a new light-absorbing material and a photoelectric conversion element using the same, which are capable of improving conversion efficiency of a solar cell. The light-absorbing material in the present invention is made up of a gan-based compound semiconductor with part of ga replaced by a 3d transition metal, and has one or more impurity bands, and whose light absorption coefficient over an overall wavelength region of not longer than 1500 nm and not shorter than 300 nm is not lower than 1000 cm−1..
A solar module is provided with improved photoelectric conversion efficiency. A first electrode and a second electrode (21, 22) each contain a plated film.
An image sensor includes an objective lens arranged on an optical axis; a substrate including a plurality of photoelectric conversion devices; and a micro lens layer including a plurality of micro lenses corresponding to each of the plurality of photoelectric conversion devices, respectively, wherein the plurality of micro lenses includes a central micro lens corresponding to a central portion of the objective lens, and an edge micro lens corresponding to an edge portion of the objective lens, and the plurality of micro lenses are configured such that focal lengths of the micro lenses increase from the central micro lens toward the edge micro lens.. .
|Photoelectric conversion device|
A photoelectric conversion device according to an exemplary embodiment includes a first substrate, a photoelectric conversion layer disposed above the first substrate, a second substrate which is different from the first substrate and disposed on the photoelectric conversion layer, and a nano pillar layer disposed above the second substrate in which the nano pillar layer includes a plurality of nano pillars which is spaced apart from each other, so as to easily absorb the light.. .
A semiconductor device includes a semiconductor substrate, a light receiving element region, a peripheral region, a boundary region, a plurality of signal lines, and a conductive layer. In light receiving element region, light receiving elements for performing photoelectric conversion are formed.
|Solid-state image pickup device and method of manufacturing same|
A solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.. .
|Solid-state imaging apparatus, manufacturing method thereof, and electronic information device|
The solid-state imaging apparatus 100a comprises: photoelectric conversion elements pd1 and pd2 formed within a semiconductor substrate 100; and transfer transistors tt1 and tt2 formed on a first main surface of the semiconductor substrate 100, for transferring the signal charge generated by the photoelectric conversion elements pd1 and pd2. The gate electrode 107 of each of the transfer transistors is configured to be disposed over a surface of a first main surface side of an electric charge accumulating region 102, which configures each of the photoelectric conversion elements.
|Photoelectric conversion device|
A photoelectric conversion device includes a circuit board, a first light emitting module, a first light receiving module, a second light emitting module, a second light receiving module, and an optical coupling member. The light emitting modules and the light receiving modules are mounted on the circuit board.
|Solid-state imaging device, drive method thereof and electronic apparatus|
A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.. .
|Solid-state imaging device, and electronic system|
A solid-state imaging device includes: a pixel array including a plurality of pixels disposed in a matrix, the pixels including a charge holding section configured to hold a signal charge transferred from a photoelectric conversion section, and to include a capacitor section having a first capacitance value and an additional capacitor section for increasing the first capacitance value to be a second capacitance value; and to part of a reset transistor configured to reset a charge held by the charge holding section, a test-voltage power source configured to apply a test voltage having a voltage different from a drive voltage of the reset transistor.. .
|Solid-state image pickup device and method of driving the same|
Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a photoelectric conversion element and a charge-conversion element.
|Image sensors for performing thermal reset, methods thereof, and devices including the same|
A method of operating an image sensor includes: thermoelectrically cooling a pixel using a thermoelectric element having a thermoelectric-junction integrated to the pixel; and performing a photoelectric conversion operation using the thermoelectric element. An image sensor includes a pixel and a readout circuit.
|Photoelectric conversion element and manufacturing method thereof|
Wherein r1 and r2 are selected from hydrogen, a c1-20 linear or branched alkyl group, and a c1-20 linear or branched alkoxy group, and r1 and r2 may or may not be the same as each other.. .
A photovoltaic module has a photovoltaic cell assembly and a diode assembly. The photovoltaic cell assembly is formed by stacking a rear surface electrode layer, a photoelectric conversion layer, and a transparent electrode layer on one surface of a substrate, and an electrode layer formed on the other surface of the substrate.
|Solid state imaging devices and methods using single slope adc with adjustable slope ramp signal|
A solid state imaging device includes a pixel array comprising a plurality of photoelectric conversion devices and an analog to digital conversion (adc) circuit configured to convert an image signal received from the pixel array to a digital signal responsive to a ramp signal and a gain setting. The solid state imaging device further includes a ramp signal generator circuit configured to generate the ramp signal with a slope that varies responsive to a control signal and a dark level offset compensation circuit configured to generate the control signal responsive to the gain setting and a dark level measurement..
|Solid-state image sensor, and imaging system|
The present technology relates to solid-state image sensor and an imaging system which are capable of providing a solid-state image sensor and an imaging system which are capable of realizing a spectroscopic/imaging device for visible/near-infrared light having a high sensitivity and high wavelength resolution, and of achieving two-dimensional spectrum mapping with high spatial resolution. There are provided a two-dimensional pixel array, and a plurality of types of filters that are arranged facing a pixel region of the two-dimensional pixel array, the filters each including a spectrum function and a periodic fine pattern shorter than a wavelength to be detected, wherein each of the filters forms a unit which is larger than the photoelectric conversion device of each pixel on the two-dimensional pixel array, where one type of filter is arranged for a plurality of adjacent photoelectric conversion device groups, wherein the plurality of types of filters are arranged for adjacent unit groups to form a filter bank, and wherein the filter banks are arranged in a unit of n×m, where n and m are integers of one or more, facing the pixel region of the two-dimensional pixel array..