|| List of recent Photodiode-related patents
| System and method for processing a backside illuminated photodiode|
System and method for processing a semiconductor device surface to reduce dark current and white pixel anomalies. An embodiment comprises a method applied to a semiconductor or photodiode device surface adjacent to a photosensitive region, and opposite a side having circuit structures for the device.
| Neutron detection device|
The present invention is a neutron detection device comprising a neutron detection scintillator composed of a colquiriite-type fluoride single crystal, and a silicon photodiode, characterized in that the single crystal contains only eu as a lanthanoid and contains 0.80 atom/nm3 or more of 6li, the content of eu is 0.0025 to 0.05 mol %, and the thickness of the scintillator exceeds 1 mm. The present invention provides a neutron detection device which has a sufficiently high neutron detection efficiency, is equipped with a neutron detection unit minimally affected by gamma rays, and is compact as a whole and lightweight..
| Complementary metal-oxide-semiconductor (cmos) image sensor|
An image sensor includes a photodiode configured to convert a received optical signal into photo charges and to output the photo charges, a sensing node adjacent to the photodiode and configured to sense the photo charges, the sensing node including a first dopant region having dopants of a first conductivity type, and a second dopant region having dopants of a second conductivity type, the second dopant region surrounding the first dopant region, and a driver configured to convert the sensed photo charges into an electrical signal and to output the electrical signal.. .
| Ultra-violet flame detector with high temperature remote sensing element|
A flame sensor apparatus is provided including a sensor assembly for sensing characteristics of a flame within a combustion chamber. The flame sensor apparatus further includes an electrical assembly that is electrically remote from the sensor assembly.
|Long life compact lighting system|
A compact lighting assembly includes a circuit board having a battery, a light, a switching circuit and a push button switch selectively powering the light with the battery via the switching circuit. The operating life of the compact lighting assembly is increased by using a rechargeable battery charged by a photovoltaic device such as a solar cell.
|Two-line, shared pixel linear image sensor|
The invention relates to image sensors of scanner type observing one image line at a time. According to the invention, only two lines of pixels are used, operating in tdi mode (summation of the charge of two pixels seeing the same image point successively) but using active pixels with a charge-voltage conversion within the pixel.
|Method and device for protecting an integrated circuit against backside attacks|
A method for detecting an attack, such as by laser, on an electronic microcircuit from a backside of a substrate includes forming the microcircuit on the semiconductor substrate, the microcircuit comprising a circuit to be protected against attacks, forming photodiodes between components of the circuit to be protected, forming a circuit for comparing a signal supplied by each photodiode with a threshold value, and forming a circuit for activating a detection signal when a signal at output of one of the photodiodes crosses the threshold value.. .
A layer in which the potential level difference normally unrequired for device operation is generated is positively inserted in a device structure. The potential level difference has such a function that even if a semiconductor having a small bandgap is exposed on a mesa side surface, a potential drop amount of the portion is suppressed, and a leakage current inconvenient for device operation can be reduced.
|Dilute sn-doped ge alloys|
Detectors based on such ge(sn) alloys of the formula ge1-xsnx (e.g., 0<x<0.01) have increased responsivity while keeping alloy scattering to a minimum. Such small amounts of sn are also useful for improving the performance of the recently demonstrated ge-on-si laser structures, since the addition of sn monotonically reduces the separation between the direct and indirect minima in the conduction band of ge.
|Photodiode and method for producing the same|
An object of the present invention is to provide, for example, a photodiode that can have sufficiently high sensitivity in a near-infrared wavelength range of 1.5 μm to 1.8 μm and can have a low dark current. A photodiode (10) according to the present invention includes a buffer layer (2) positioned on and in contact with an inp substrate (1), and an absorption layer (3) positioned on and in contact with the buffer layer, wherein the absorption layer includes 50 or more pairs in which a first semiconductor layer 3a and a second semiconductor layer 3b constitute a single pair, the first semiconductor layer 3a having a bandgap energy of 0.73 ev or less, the second semiconductor layer 3b having a larger bandgap energy than the first semiconductor layer 3a, and the first semiconductor layer 3a and the second semiconductor layer 3b constitute a strain-compensated quantum well structure and each have a thickness of 1 nm or more and 10 nm or less..
|Propellant tank with radiometric measurement of content quantity|
A propellant tank for containing a propellant with a liquid phase, preferably for a satellite, includes a tank shell wrapped or wound with scintillating glass fibers, a gamma radiation emitter arranged preferably in the center of the tank, and photodiodes allocated to the glass fibers. Preferably, plural glass fibers are wound in cylindrically symmetrical sections around the tank, and the winding axis of the glass fibers extends through the tank outlet.
|Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process|
An embodiment relates to a sensor integrated on a semiconductor substrate and comprising at least one first and second photodiode including at least one first and one second p-n junction made in such a semiconductor substrate as well as at least one first and one second antireflection coating made on top of such a first and second photodiode. At least one antireflection coating of such a first and second photodiode comprises at least one first and one second different antireflection layer to make a double layer antireflection coating suitable for obtaining for the corresponding photodiode a responsivity peak at a predetermined wavelength of an optical signal incident on the sensor.
|Image sensor structure to reduce cross-talk and improve quantum efficiency|
A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.. .
|Image sensor and method for fabricating the same|
A method for fabricating an image sensor having a pixel region and a logic region, which includes one of: (1) forming a photodiode in a substrate at the pixel region, (2) forming a first interlayer insulating layer on the substrate, (3) forming a first stop film on the first interlayer insulating layer, (4) forming an insulating film on the first stop film, (5) forming a second stop film on the insulating film, (6) forming at least one trench by selective etching of the second stop film and the insulating film positioned at the pixel region for exposing the first stop film, (7) forming conductive material on the second stop film to fill the at least one trench, and (8) forming a zero wiring layer in the at least one trench by planarizing the conductive material until the second stop film is exposed.. .
|Optical measurement method and system|
The present application is directed to the measurement of the intensity and phase of high speed optical signals. The present application uses a tunable optical local oscillator, an optical coupler, a photodiode and rf electronics.
|Temperature calibration methods and apparatus for optical absorption gas sensors, and optical absorption gas sensors thereby calibrated|
An optical absorption gas sensor has an led light source and a photodiode light detector, a temperature measuring device for measuring the led temperature and a temperature measuring device for measuring the photodiode temperature. The sensor is calibrated by measuring the response of photodiode current at zero analyte gas concentration and at a reference analyte gas concentration.
|Avalanche photodiode and method for manufacturing the same|
An avalanche photodiode includes a substrate; an avalanche multiplying layer, a p-type electric field controlling layer, a light-absorbing layer, and a window layer sequentially laminated on the substrate. A p-type region is present in parts of the window layer and the light-absorbing layer.
|Pixel, pixel array, and image sensor|
A pixel and pixel array for use in an image sensor are provided. The image sensor includes floating sensing nodes symmetrically arranged with respect to a photodiode in each pixel..
|Backside structure for bsi image sensor|
An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region..
|Semiconductor device and manufacturing method thereof|
In a cmos image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row.
|Solid-state image pickup device and method of driving solid-state image pickup device|
A controlling section causes a charge of a photodiode to be output to an integration circuit by bringing a readout switch into a connected state, and then brings the readout switch into a non-connected state. Thereafter, a voltage value is output to a holding circuit from the integration circuit.
|Digital pixel sensor with reduced noise|
An apparatus and method for forming a digital image are disclosed. The apparatus includes a plurality of pixel sensors and a controller.
|Discriminating photo counts and dark counts in an avalanche photodiode output|
The output of an avalanche photodiode (apd) comprises a “photocurrent” component comprising photon initiated events resulting from the interaction of photons with the apd and a “dark current” component comprising dark carrier events arising in the apd even when the apd is not exposed to light. Differences in the pulse height distributions of photon initiated events and dark carrier initiated events are used to statistically discriminate between photocurrent and dark current components of apd output..
|Optical transmission module including light emitting diode and photodiode|
An optical transmission module includes a printed circuit board (pcb) including a first surface and an opposite second surface, a ceramic substrate mounted on the first surface, a light emitting diode and a photodiode carried on the ceramic substrate, an optical printed circuit board (opcb) mounted on the second surface, a first reflective unit and, and a second reflective unit. The opcb includes a flexible substrate which carries a first planar optical wave guide corresponding the first reflective unit and a second planar optical wave guide corresponding the second reflective unit.
|High performance gesi avalanche photodiode operating beyond ge bandgap limits|
Avalanche photodiodes (apds) having at least one top stressor layer disposed on a germanium (ge)-containing absorption layer are described herein. The top stressor layer can increase the tensile strain of the ge-containing absorption layer, thus extending the absorption of apds to longer wavelengths beyond 1550 nm.
|Photodiode and other sensor structures in flat-panel x-ray imagers and method for improving topological uniformity of the photodiode and other sensor structures in flat-panel x-ray imagers based on thin-film electronics|
A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons.
|Solid imaging device|
A solid-state imaging device includes a photodetecting section including pixels each including a transistor and a photodiode, readout wiring lines connected to the transistors, a signal output section for sequentially outputting voltage values according to the amounts of charges input through the respective readout wiring lines, potential change switches for switching the potentials of the readout wiring lines to a potential vdr different from input potentials of integration circuits of the signal output section, and a controlling section. The controlling section switches potentials of the readout wiring lines to the different potential vdr for a predetermined period included in a period, after an elapse of a readout period where voltage values corresponding to the amounts of charges generated in the pixels are sequentially output from the signal output section, until a next readout period is started..
|Circuits and methods for monitoring power parameters in an optical transceiver|
A circuit, optical transceiver and/or methods for using the same may be useful for determining average power, extinction ratio, and/or modulation amplitude when monitoring an optical transceiver and/or optical network. The circuit generally comprises a photodiode configured to generate a first current responsive to an optical signal, a current mirror coupled to a first terminal of the photodiode, and a detector coupled to a second terminal of the photodiode.
|Circuit board assembly having optical connectors for signal transmission|
A circuit board assembly includes a substrate, a first optical connector, a second optical connector, and at least two planar light wave circuits. The first optical connector includes a first circuit board electrically connected to the substrate, at least one first laser diode, at least one first photodiode, and a first transparent shell.
|Apparatus for vertically integrated backside illuminated image sensors|
A backside illuminated image sensor comprises a photodiode and a first transistor located in a first chip, wherein the first transistor is electrically coupled to the photodiode. The backside illuminated image sensor further comprises a second transistor formed in a second chip and a plurality of logic circuits formed in a third chip, wherein the second chip is stacked on the first chip and the third chip is stacked on the second chip.
|Semiconductor device and method of manufacturing the same|
A solid-state image sensing element including a transistor with stable electrical characteristics (e.g., significantly low off-state current) is provided. Two different element layers (an element layer including an oxide semiconductor layer and an element layer including a photodiode) are stacked over a semiconductor substrate provided with a driver circuit such as an amplifier circuit, so that the area occupied by a photodiode is secured.
|Method and system for a feedback transimpedance amplifier with sub-40khz low-frequency cutoff|
A system for a feedback transimpedance amplifier with sub-40 khz low-frequency cutoff is disclosed and may include amplifying electrical signals received via coupling capacitors utilizing a transimpedance amplifier (tia) having feedback paths comprising source followers and feedback resistors. Gate terminals of the source followers mey be coupled to output terminals of the tia.
|Anti-blooming circuit for integrating photodiode pre-amplifiers|
An input clamping circuit of a photo detector preamplifier is activated when an input transistor is turned off by an input overload, and the drain voltage of the input transistor is pulled toward ground by a current source. Even with extreme overloads, the operating conditions (vgs and id) of the input transistor remain within normal range.
|Monolithic multispectral visible and infrared imager|
The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material.
|Nirs device with optical wavelength and path length correction|
A near infrared spectrometer and method for wavelength and path length correction are disclosed. The spectrometer includes a number of photodiodes that transmit broadband near infrared measurement light into the tissue and at least one broadband detector which measures the light signal transmitted through the tissue.
|Image sensor and method for fabricating the same|
An image sensor includes a trench formed by a shallow trench isolation (sti) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of the image sensor, a trench is formed in a substrate through a sti process, and a channel stop layer is formed over the substrate in the trench.
|Optoelectronic assembly and active optical cable using same|
An optoelectronic assembly includes a substrate subassembly and a cable subassembly. The substrate assembly includes a substrate, a holder disposed on the substrate, an optoelectronic interface ic, and a plurality of optoelectronic components.
|Solid-state imager and x-ray ct apparatus including same|
The present invention relates to a solid-state imaging device and the like having a structure for capturing a high-resolution image even when any of the reading-out wiring and row selecting wiring is disconnected. The solid-state imaging device (1) comprises a photodetecting section (10) having m×n pixel portions p1,1 to pm,n two-dimensionally arranged in a matrix of m rows and n columns.
|Solid imaging device and x-ray ct device including the solid imaging device|
The present invention relates to a solid-state imaging device, etc. Having a structure for capturing a high-resolution image even when any row selecting wiring is disconnected.
|Trans-impedance amplifier for high speed optical-electrical interfaces|
The differential trans-impedance amplifier uses trans-resistance(s) connected between the input nodes of a first differential amplifier, to implement a trans-impedance differential amplifier in a differential fashion and has two identical resistances, each connected between the photodiode and a respective dc voltage rail of a common bias network of the photodiode adapted to reverse bias the photodiode. The biasing resistances may be much larger than the trans-resistance(s) to prevent drawing any significant signal current from the photodiode.
|Backside illumination cmos image sensor and method for fabricating the same|
A method of manufacturing a backside illumination cmos image sensor includes bonding a first substrate and a second substrate, the first substrate including an epitaxial layer in which a photodiode region is defined. The method further includes removing the first substrate to expose the epitaxial layer, patterning the epitaxial layer to form a deep trench for separating pixels, forming a first passivation layer on/over the epitaxial layer with the deep trench formed therein, and sequentially forming a color filter and a lens on/over a top region of the first passivation layer corresponding to the epitaxial layer separated by the deep trench..
|Photodiode and photodiode array with improved performance characteristics|
The present invention is a photodiode and/or photodiode array, having a p+ diffused area that is smaller than the area of a mounted scintillator crystal, designed and manufactured with improved device characteristics, and more particularly, has relatively low dark current, low capacitance and improved signal-to-noise ratio characteristics. More specifically, the present invention is a photodiode and/or photodiode array that includes a metal shield for reflecting light back into a scintillator crystal, thus allowing for a relatively small p+ diffused area..
|Fluorescence emissions detector|
A light source is gated on and off in response to a pulsed signal. Photo emissions from the light source are coupled to a material under test.
|Unit cells with avalanche photodiode detectors|
Various techniques are disclosed for providing reference signals to image detectors in accordance with one or more embodiments of the invention. For example, in one or more embodiments, switched capacitors may be used to provide bias voltages to individual unit cells of a focal plane array such that the bias voltages are held by the unit cells over one or more integration periods while the unit cells are decoupled from an input line.