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Nitrogen

Nitrogen-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Laser diode
Sony Corporation
October 12, 2017 - N°20170294761

A laser diode with an improved kink level in the l-i characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride iii-v compound semiconductor containing at least gallium (ga) in 3b-group elements and at least nitrogen (n) in 5b-group elements, an n-type compound semiconductor ...
Dishwashing cleaning composition
The Procter & Gamble Company
October 12, 2017 - N°20170292093

A dishwashing composition including a copolymer which includes polyalkylene oxide groups and quaternary nitrogen atoms.
Epoxy/amine adducts for dispersing solids
Byk-chemie, Gmbh
October 12, 2017 - N°20170292030

The invention relates to comb copolymers, which can be produced from at least one diglycidyl ether (a) of general formula (i), at least one polyether monoamine (b) of the general formula rt—[oet]n[opr]m[obu]s—nh2, at least one amine (c) of the general formula z—r1—nh2, and optionally at least one ...
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End-modified conjugated diene polymer and method for preparing the same
Johns Manville
October 12, 2017 - N°20170291997

Wherein p is a conjugated diene polymer chain; r1 to r7 are each independently c1-c20 saturated or unsaturated hydrocarbon chains; x is carbon (c), silicon (si), or nitrogen (n); a is 1 or 2; and n is an integer of 1 to 200, and a method for preparing the same.
Method of making nanocrystalline cellulose
King Abdulaziz University
October 12, 2017 - N°20170291962

The method of making nanocrystalline cellulose is a flash lyophilized-acidic hydrolysis method for converting cellulosic fibers into nanocrystalline cellulose. Cellulosic fibers are initially ground in a high-speed, rotary grinder to produce ground cellulose fiber. The ground cellulose fiber is then dried to produce dried, ground cellulose, which is then freeze-dried to yield lyophilized cellulose. Pure concentrated sulfuric acid is then ...
Thienopyrimidine compounds
King Abdulaziz University
October 12, 2017 - N°20170291907

Wherein r1 is optionally substituted aryl or an optionally substituted 5- or 6-membered heteroaryl ring; r2 and r3 are independently selected from hydrogen, c1-c6 alkyl, c3-c8 cycloalkyl, c3-c8 cycloalkyl-(c1-c6)-alkyl, aryl-(c1-c6)-alkyl optionally substituted in the ring part thereof, a 5- or 6-membered monocyclic heterocyclic group optionally linked via a c1-c6 alkylene ...
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Anammox process at waste water plant
Veolia Water Solutions & Technologies Support
October 12, 2017 - N°20170291839

A process for converting ammonium (nh4+) of a mainstream of a wastewater plant to dinitrogen gas (n2), including the consecutive steps of i.) removing biodegradable carbon compounds in the mainstream, ii.) converting ammonium (nh4+) in the mainstream to nitrite (no2−) in an aerated biological process containing ammonium oxidizing bacteria (aob) in a nitration vessel (133a-133d); and iii.) denitrifying ...
Non-porous molded article for polishing layer, polishing pad, and polishing method
Kurray Co., Ltd.
October 12, 2017 - N°20170291275

Disclosed is a non-porous molded article for a polishing layer, the non-porous molded article including a thermoplastic polyurethane, wherein the thermoplastic polyurethane has a maximum value of a loss tangent (tan 5) in a range of −70 to −50° c. Of 4. 00×10−2 or less. Preferably, the thermoplastic polyurethane is obtained by polymerization of a polymer diol having a number ...
Fluorine reduction with scope with controlled oxidation
Applied Materials, Inc.
October 12, 2017 - N°20170291199

A method for removing halogen from a surface of a substrate is described herein. The method described herein includes flowing oxygen gas and an inert gas such as nitrogen gas into a rps. The gases in the rps are energized to form oxygen radicals and nitrogen radicals. The oxygen and nitrogen radicals are used to remove halogen content on the ...
Separation membrane structure and nitrogen concentration reduction method
Ngk Insulators, Ltd.
October 12, 2017 - N°20170291135

A separation membrane structure comprises a porous support body, a zeolite membrane formed on the porous support body and comprising pores having a major diameter and a minor diameter. The ratio of a major diameter to a minor diameter is greater than 1. 0. The minor diameter is greater than or equal to 0. 30 nm and less than or equal to 0. 35 nm.
Urat1 inhibitor
J-pharma Co., Ltd.
October 12, 2017 - N°20170290795

Provided are a compound represented by the following formula (iii), a tautomer or stereoisomer of the compound, or a pharmaceutically acceptable salt or solvate thereof used as a therapeutic agent for gout or hyperuricemia. (in the formula (iii), r1a, r2a, r6a, and r7a represent a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an alkoxy ...
Use of nitrogen-containing compounds as plasticizers for peptide-based biopolymers and uses thereof
The United States Of America, As Represented By The Secretary Of Agriculture
October 12, 2017 - N°20170290357

A novel method of reducing the melting point of a peptide-based biopolymer using a nitrogen-containing compound as a plasticizer is provided. The peptide-based biopolymer can be keratin or silk. The nitrogen-containing compound can be one or more amino acids or other nitrogen-containing compounds (except urea), all of which have a melting temperature above approximately 133° c., the decomposition temperature of ...
Cold coffee brewing system and method
Ronnoco Coffee, Llc
October 12, 2017 - N°20170290354

A coffee brewing system and method brew hot coffee at an elevated temperature by mixing coffee grounds with hot water, filtering the hot coffee to remove at least some of the coffee grounds from the hot coffee to form filtered hot coffee, and rapidly cooling the filtered hot coffee to reduce a temperature of the filtered hot coffee to form ...
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Negative electrode active material for non-aqueous electrolyte secondary battery, negative electrode for non-aqueous electrolyte secondary ...
Shin-etsu Chemical Co., Ltd.
October 05, 2017 - N°20170288216

A negative electrode active material for a non-aqueous electrolyte secondary battery, including negative electrode active material particles containing a silicon compound (siox where 0. 5≦x≦1. 6), the negative electrode active material particles being coated with a carbon coating composed of a substance at least partially containing carbon, the carbon coating having a density ranging from 1. 2 g/cm3 to 1. 9 g/cm3, ...
Laminated film and process for manufacturing the same
Sumitomo Chemical Company, Limited
October 05, 2017 - N°20170288170

An object of the present invention is to provide a laminated film which can prevent transmission of the water vapor at the high level, and has good flex resistance, and the present invention provides a laminated film comprising at least a gas barrier layer and an inorganic polymer layer being laminated on a resin substrate, wherein concerning a distance from ...
Light emitting diodes with n-polarity and associated methods of manufacturing
Micron Technology, Inc.
October 05, 2017 - N°20170288089

Light emitting diodes (“leds”) with n-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the ...
Semiconductor device
Semiconductor Energy Laboratory Co., Ltd.
October 05, 2017 - N°20170288063

A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with ...
Method for manufacturing semiconductor device, and semiconductor device
Renesas Electronics Corporation
October 05, 2017 - N°20170287970

Provided is a semiconductor device with improved performance. In a method for manufacturing a semiconductor device, after forming a gate electrode of a transfer transistor over a p-type well, a photodiode is formed in one part of the p-type well positioned on one side with respect to the gate electrode. Then, a cap insulating film including silicon and nitrogen is ...
Semiconductor device and active matrix substrate using semiconductor device
Joled Inc.
October 05, 2017 - N°20170287946

According to one embodiment, a semiconductor device includes an insulating substrate including a pixel area and a peripheral circuit area around the pixel area, a first insulating layer which is provided on the insulating substrate and includes at least nitrogen, a second insulating layer at least provided on the first insulating layer of the peripheral circuit area, a first thin-film ...
Semiconductor device manufacturing method and recording medium
Hitachi Kokusai Electric Inc.
October 05, 2017 - N°20170287707

A method of manufacturing a semiconductor device includes: preparing a substrate processing apparatus including a substrate process chamber having a plasma-generation space where a nitrogen-containing gas is plasma-exited and a process space where a substrate is mounted in communication with the plasma-generation space, an inductive coupling structure configured by a coil and an impedance matching circuit, wherein electric field combining ...
Plasma gas jetting device
Fuji Machine Mfg. Co., Ltd
October 05, 2017 - N°20170287679

Plasma gas is ejected from inner gas ejection ports that are formed in a downstream side housing, and nitrogen gas is supplied as protective gas to a protective gas source between a housing and a cover section. Nitrogen gas is sucked in accompanying exhaust from inner gas ejection ports of plasma gas, and is ejected from the outer gas ejection ...
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