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Nitrogen patents



      
           
This page is updated frequently with new Nitrogen-related patent applications. Subscribe to the Nitrogen RSS feed to automatically get the update: related Nitrogen RSS feeds. RSS updates for this page: Nitrogen RSS RSS


Rolling bearing element, in particular rolling bearing ring

Rolling bearing element, in particular rolling bearing ring

Fire-resistant composite material

Fire-resistant composite material

Fire-resistant composite material

System for recirculating engine exhaust gas

Date/App# patent app List of recent Nitrogen-related patents
07/02/15
20150189748
 Copper film-forming agent and  forming copper film patent thumbnailnew patent Copper film-forming agent and forming copper film
The present invention is a copper film-forming agent containing a copper complex composed of a copper formate and a 5-membered or 6-membered nitrogen-containing heterocyclic compound having from 1 to 3 nitrogen atoms, in which the nitrogen-containing heterocyclic compound has one or two ring structures, the total number of carbon atoms contained in a substituent is from 1 to 5, and an element other than a carbon atom in the compound is not bonded to a hydrogen atom.. .
07/02/15
20150189745
 Epoxy resin composition, and, prepreg and copper clad laminate manufactured using the composition patent thumbnailnew patent Epoxy resin composition, and, prepreg and copper clad laminate manufactured using the composition
The present invention relates to an epoxy resin composition and a prepreg and a copper-clad laminate made by using same. The epoxy resin composition comprises components as follows: an epoxy resin containing 3 or more epoxy groups and containing nitrogen in the molecular chain, a phosphorus-containing halogen-free flame retardant compound and an active ester hardener; the amount of the epoxy resin containing 3 or more epoxy groups and containing nitrogen in the molecular chain is 100 parts by weight, the amount of the phosphorus-containing halogen-free flame retardant compound is 10-150 parts by weight.
07/02/15
20150187901
 Multi-plasma nitridation process for a gate dielectric patent thumbnailnew patent Multi-plasma nitridation process for a gate dielectric
A gate dielectric can be formed by depositing a first silicon oxide material by a first atomic layer deposition process. The thickness of the first silicon oxide material is selected to correspond to at least 10 deposition cycles of the first atomic layer deposition process.
07/02/15
20150187882
 Semiconductor device,  manufacturing the same and power semiconductor device including the same patent thumbnailnew patent Semiconductor device, manufacturing the same and power semiconductor device including the same
A method of manufacturing a semiconductor device may include: preparing a substrate formed of sic; depositing crystalline or amorphous silicon (si) on one surface of the substrate to form a first semiconductor layer; and performing a heat treatment under a nitrogen atmosphere to form a second semiconductor layer formed of sicn between the substrate and the first semiconductor layer.. .
07/02/15
20150187763
 Semiconductor devices and methods of fabricating semiconductor devices patent thumbnailnew patent Semiconductor devices and methods of fabricating semiconductor devices
Semiconductor devices are provided. A semiconductor device includes a substrate including first through fourth areas.
07/02/15
20150187595
 A semiconductor device comprising a surface portion implanted with nitrogen and fluorine patent thumbnailnew patent A semiconductor device comprising a surface portion implanted with nitrogen and fluorine
A method of fabricating a semiconductor device is provided. A substrate is provided.
07/02/15
20150187593
 Etching method, storage medium and etching apparatus patent thumbnailnew patent Etching method, storage medium and etching apparatus
There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.. .
07/02/15
20150187560
 Cyclic deposition  thin film formation, semiconductor manufacturing method, and semiconductor device patent thumbnailnew patent Cyclic deposition thin film formation, semiconductor manufacturing method, and semiconductor device
A cyclic deposition method for thin film formation includes forming a silicon thin film on an object by injecting a silicon precursor into a chamber in which the object is loaded, depositing silicon on the object, and performing a first purge, removing an unreacted portion of the silicon precursor and reaction by-products from the interior of the chamber, pre-processing a surface of the silicon thin film by forming a plasma atmosphere in the chamber and supplying a first reaction source having a hydrogen atom, and forming the silicon thin film as an insulating film including silicon, by forming the plasma atmosphere in the chamber and supplying a second reaction source having one or more oxygen atoms, one or more nitrogen atoms, or a mixture thereof.. .
07/02/15
20150187559
 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium patent thumbnailnew patent Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device includes forming a laminated film on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen and which does not contain a borazine ring skeleton, and forming a second film which contains the predetermined element and a borazine ring skeleton.
07/02/15
20150187496
 Composite electrode and electrolytic capacitor patent thumbnailnew patent Composite electrode and electrolytic capacitor
Provided is a composite electrode including a metal layer and a composite dielectric layer. The composite dielectric layer includes a metal oxide dielectric layer and a polymer dielectric layer.
07/02/15
20150185606
new patent

Curable composition for photo imprints, forming pattern, fine pattern, and manufacturing semiconductor device


Provided is a curable composition for photo imprints excellent in the mold releasability and the ink jettability. The curable composition for photo imprints, comprising: a polymerizable compound (a); a photo-polymerization initiator (b); and a mold releasing agent (c), the mold releasing agent (c) being represented by the formula (i) below.
07/02/15
20150184915
new patent

Vertical counter-flow immersion freezer


A product is chilled or at least partially frozen by descending against a counter-current flow of liquid nitrogen in a vertical freezer containing an immersion bath of liquid nitrogen.. .
07/02/15
20150184877
new patent

Inerting preventing and/or extinguishing fire as well as inerting system to realize the method


The invention relates to an inerting method as well as an inerting system (1) to set and/or maintain a reduced oxygen content in an enclosed room (2), wherein a gas separation system (3.1, 4.1; 3.2, 4.2; 3.3, 4.3) is provided which separates off at least a portion of the oxygen from an initial gas mixture provided in a mixing chamber (6) and by so doing, provides a nitrogen-enriched gas mixture. In order to optimize the operation of the inerting system (1), the invention provides for a portion of the air to be withdrawn from the enclosed room (2) and admixed with fresh air in the mixing chamber (6)..
07/02/15
20150184695
new patent

Rolling bearing element, in particular rolling bearing ring


A rolling bearing element (2), in particular a rolling bearing ring (3, 4), the rolling bearing element being made of an austenitic steel which has a composition of 16-21 mass percent chromium, 16-21 mass percent manganese, 0.5 to 2.0 mass percent molybdenum, a total of 0.8 to 1.1 mass percent carbon and nitrogen, wherein the ratio of carbon to nitrogen is 0.5 to 1.1, up to 2.5 mass percent melting-related impurities, and a remaining mass percent of iron is provided. The sum of all the components equals 100 mass percent, and the rolling bearing element has a surface layer (6) which is produced by at least one measure for diffusing carbon and/or nitrogen into regions near the surface of the rolling bearing element and which contains carbon and/or nitrogen..
07/02/15
20150184619
new patent

System for recirculating engine exhaust gas


The present disclosure relates to a system for recirculating engine exhaust gas, and more particularly, to a system for recirculating engine exhaust gas, which mixes a part of exhaust gas discharged from an engine with air for combustion, and recirculates the mixture, thereby inhibiting nitrogen oxide (nox) from being generated. Therefore, a technical problem to be achieved in the present disclosure is to provide a system for recirculating engine exhaust gas which may have a simplified structure.
07/02/15
20150184361
new patent

Machine body and machinery


Provided is a machine body capable of preventing thermal decomposition of a liquid reducing agent in a reducing agent injector. The machine body includes an exhaust gas treatment device that reduces nitrogen oxides in exhaust gas of an engine provided within a machine room, and a reducing agent supplier that supplies the liquid reducing agent to the exhaust gas treatment device.
07/02/15
20150184344
new patent

Mixtures of polyvinylamines and of liquid compositions of cationic amylaceous materials as agents for improving the dry strength of paper and cardboard


Mixtures of polyvinylamines and of liquid compositions of cationic amylaceous materials having very specific characteristics in terms of dry matter, viscosity, nitrogen content and ph. With such mixtures, it is possible to produce preparations that are particularly effective at increasing the dry strength of paper and cardboard.
07/02/15
20150184283
new patent

Ternary metal nitride formation by annealing constituent layers


Ternary metal nitride layers suitable for thin-film resistors are fabricated by forming constituent layers of complementary components (e.g., binary nitrides of the different metals, or a binary nitride of one metal and a metallic form of the other metal), then annealing the constituent layers to interdiffuse the materials, thus forming the ternary metal nitride. The constituent layers (e.g., 2-5 nm thick) may be sputtered from binary metal nitride targets, from metal targets in a nitrogen-containing ambient, or from metal targets in an inert ambient.
07/02/15
20150184261
new patent

Compositions comprising c5 and c6 monosaccharides


Compositions comprising c5 and c6 monosaccharides and low levels of undesirable impurities, such as compounds containing sulfur, nitrogen, or metals, are disclosed.. .
07/02/15
20150184191
new patent

Yield and stress tolerance in transgenic plants iv


Polynucleotides and polypeptides incorporated into expression vectors have been introduced into plants and were ectopically expressed. The polypeptides of the invention have been shown to confer at least one regulatory activity and confer increased yield, greater height, greater early season growth, greater canopy coverage, greater stem diameter, greater late season vigor, increased secondary rooting, more rapid germination, greater cold tolerance, greater tolerance to water deprivation, reduced stomatal conductance, altered c/n sensing, increased low nitrogen tolerance, increased low phosphorus tolerance, or increased tolerance to hyperosmotic stress as compared to the control plant as compared to a control plant..
07/02/15
20150184121
new patent

Culturing medium and culturing a bacterium of genus tepidimonas


The disclosure provides a culturing medium for culturing a bacterium of genus tepidimonas, including: a carbon source which is an organic acid, selected from a group consisting of acetate, lactate and butyrate; a nitrogen source selected from a group consisting of ammonium sulfate ((nh4)2so4), ammonium nitrate (nh4no3), ammonium chloride (nh4cl) and urea; phosphate; magnesium chloride (mgcl2); yeast extract; and trace elements.. .
07/02/15
20150184093
new patent

Integrated processes for refining syngas and bioconversion to oxygenated organic compound


Integrated processes are provided for syngas refining and bioconversion of syngas to oxygenated organic compound. In the integrated processes ammonia contained in the syngas is recovered and used as a source of nitrogen and water for the fermentation.
07/02/15
20150184012
new patent

Inkjet printing process and non-aqueous ink set


An inkjet printing process including forming an image by superposing two or more kinds of inks, wherein the two or more kinds of inks contain (a) an ink containing at least a first coloring material, a non-aqueous solvent, a non-aqueous resin, and a water-soluble resin having an amino group, and (b) an ink containing at least a second coloring material, a non-aqueous solvent, and a nitrogen-containing graft copolymer having a polyester side chain, and a non-aqueous ink set containing the ink (a) and the ink (b).. .
07/02/15
20150184001
new patent

Fluoropolymer composition


The invention pertains to a fluoropolymer composition suitable for adhering a fluoropolymer coating onto a surface, in particular onto a metal surface, said composition comprising: at least one fluoropolymer [polymer (a)]; at least one aromatic polycondensation polymer [polymer (p)]; a solvent mixture [mixture (m)] comprising dimethylsulfoxide (dmso) and at least one solvent selected from the group consisting of diesters of formula (ide) and ester-amide of formula (1ea): r1—ooc-ade-coo—r2 (1de), r1—ooc-aea-co—nr3r4 (1ea) wherein: r1 and r2, equal to or different from each other, are independently selected from the group consisting of c1-c20 hydrocarbon groups; r3 and r4, equal to or different from each other, are independently selected from the group consisting of hydrogen, c1-c36 hydrocarbon groups, possibly substituted, being understood that r3 and r4 might be part of a cyclic n moiety including the nitrogen atom to which they are bound, said cyclic moiety being possibly substituted and/or possibly comprising one or more than one additional heteroatom, and mixtures thereof; ade and aea, equal to or different from each other, are independently a linear or branched divalent alkylene group, and to a method for coating a surface, specifically a metal surface, with a fluoropolymer, using said fluoropolymer composition.. .
07/02/15
20150183930
new patent

Fire-resistant composite material


Wherein r and r′ are each independently chosen from hydrocarbylene groups and hydrocarbylene groups having at least one heteroatom chosen from oxygen, nitrogen, and sulfur; and n is an integer chosen from 1 to 30. Also provided are processes for preparing the disclosed fire-resistant composite material..
07/02/15
20150183902
new patent

Polymerizable compound, polymerizable composition, polymer, and optically anisotropic material


The present invention relates to: a polymerizable compound (i), wherein y1 to y6 are a chemical single bond, —o—c(═o)—, —c(═o)—o— or the like, g1 and g2 are a divalent aliphatic group, z1 and z2 are an alkenyl group, ax is a fused ring group represented by a formula (ii), wherein x is —nr3—, an oxygen atom, a sulfur atom or the like, r3 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and d is a substituted or unsubstituted ring having 1 to 20 carbon atoms that includes at least one nitrogen atom, ay is a hydrogen atom, an alkyl group, a1 is a trivalent aromatic group or the like, a2 and a3 are a divalent aromatic group having 6 to 30 carbon atoms or the like, and q1 is a hydrogen atom, or an alkyl group having 1 to 6 carbon atoms.. .
07/02/15
20150183839
new patent

Soybean nodulation regulatory peptides and methods of use


Peptide fragments of clavata3/esr-related (cle) proteins of soybean are provided which are activators of autoregulation of nodulation in soybean. Cle30 and cle80 peptide fragments may act systemically while cle60 peptides may act locally in the plant root.
07/02/15
20150183743
new patent

Compound and use of compound to prepare a radiolabelled compound


The invention is directed to a compound according to formula (1) wherein r2 is fluorine, x is nitrogen or carbon and r3 is an organic group. The invention is also directed to the use of this compound as a precursor for the preparation of a 11c or 18f-radio labelled compound.
07/02/15
20150183675
new patent

Ion transport membranes in float glass manufacturing


An ion transport membrane, a heat exchanger, and a recuperator are integrated with a float glass manufacturing process. Only feeds of fuel and air are necessary for producing hot oxygen for a melting furnace and a nitrogen-enriched stream to a float bath.
07/02/15
20150183650
new patent

Oxycombustion systems and methods with thermally integrated ammonia synthesis


Oxycombustion systems and oxycombustion methods include thermally integrated ammonia synthesis. The oxycombustion systems may include an air separation unit that separates air into an oxygen stream and a nitrogen stream.
07/02/15
20150182956
new patent

Process for producing cumene


In a process for producing cumene, benzene and a c3 alkylating agent comprising isopropanol are supplied to an alkylation zone comprising a molecular sieve alkylation catalyst under alkylation conditions such that the isopropanol reacts with the benzene to produce a reaction product comprising cumene. Subsequently, the supply of benzene and c3 alkylating agent to the alkylation zone is ceased and a gaseous stripping agent is supplied to the molecular sieve alkylation catalyst under conditions effective to remove nitrogenous impurities deposited on the catalyst during the preceding alkylation reaction.
07/02/15
20150182952
new patent

Obtention of low loading catalysts for deep hydrocarbons hydrodesulfurization based of comos, with nimos hydrodenitrogenant additive, supported on three-dimensional nanostructured mesoporous materials


The present invention shows a synthesis method for a highly dispersed supported catalyst over a kit-6 type nanostructured mesoporous oxide with elements from groups iiia or iva, or ivb. The method includes the synthesis of the support, the incorporation of como and nimo active phases through impregnation to pore volume, assisted by ultrasound, calcination at controlled conditions in order to obtain a phase of hydrated trioxide molybdenum or molybdic acid, which facilitates the subsequent sulfihydration and the mechanical mixing of a comos/support with a hydrodenitrogenant nimos/support additive.
07/02/15
20150182674
new patent

Biodegradable composite wire for medical devices


A bioabsorbable wire material includes manganese (mn) and iron (fe). One or more additional constituent materials (x) are added to control corrosion in an in vivo environment and, in particular, to prevent and/or substantially reduce the potential for pitting corrosion.
07/02/15
20150181880
new patent

Fused heterocyclic compound


In the formula g1 represents a nitrogen atom, etc.; g2 represents a nitrogen atom, etc.; a1 represents a nitrogen atom, etc.; a2 represents a nitrogen atom, etc.; a3 represents a nitrogen atom, etc.; a4 represents a nitrogen atom, etc.; a5 represents a nitrogen atom, etc.; r1 represents a c1-c6 chain hydrocarbon group, etc., optionally having one or more atoms or groups selected from group x; r2, r3 and r4 are the same or different, and represent a c1-c6 chain hydrocarbon group, etc., optionally having one or more atoms or groups selected from group x; r5 and r6 are the same or different, and represent a c1-c6 chain hydrocarbon group, etc., optionally having one or more atoms or groups selected from group x; and n represents 0, 1, 2.. .
06/25/15
20150181724

Methods of forming segmented vias for printed circuit boards


Novel methods for forming a printed circuit board (pcb) having one or more segmented vias are provided, including improved methods of removing the catalyst after the plating process when forming a segmented via in the pcb. After the electroless plating, excess catalyst on the surface of the plating resist is removed using a catalyst remover, such as an acidic solution that includes at least nitrite or nitrite ion and halogen ion, or the catalyst remover may be an etchant for plating resist, such as alkaline permanganate compound solution or plasma gas comprising at least one of oxygen, nitrogen, argon and tetrafluoromethane, or a mixture of at least two of these gasses.
Sanmina Corporation
06/25/15
20150180492

Gas cell, quantum interference device, atomic oscillator, electronic device, and moving object


A gas cell includes an internal space in which metal atoms and a buffer gas are sealed. The buffer gas includes a gas mixture including nitrogen gas and argon gas.
Seiko Epson Corporation
06/25/15
20150180487

Gas cell, quantum interference device, atomic oscillator, electronic device, and moving object


A gas cell includes an internal space in which metal atoms and a buffer gas are sealed, the buffer gas includes nitrogen gas, and the partial pressure of the nitrogen gas in the internal space is equal to or higher than 30 torr. The gas cell includes a pair of window portions and a body portion, the length of the internal space along a direction in which the pair of window portions are arranged is equal to or less than 10 mm, and the width of the internal space along a direction perpendicular to the direction in which the pair of window portions are arranged is equal to or less than 10 mm..
Seiko Epson Corporation
06/25/15
20150180045

Non-platinum group metal electrocatalysts using metal organic framework materials and preparation


A method of preparing a nitrogen containing electrode catalyst by converting a high surface area metal-organic framework (mof) material free of platinum group metals that includes a transition metal, an organic ligand, and an organic solvent via a high temperature thermal treatment to form catalytic active sites in the mof. At least a portion of the contained organic solvent may be replaced with a nitrogen containing organic solvent or an organometallic compound or a transition metal salt to enhance catalytic performance.
Uchicago Argonne, Llc
06/25/15
20150180035

Carbon material for power storage device electrode, producing the same and power storage device using the same


A method for producing a vitreous carbon material which can serve as a carbon material for a power storage device in the method, a polymer material, having six-membered ring structures in its basic carbon skeleton and having a nitrogen atom, is heated at a temperature of 1000° c. To 2100° c.
Panasonic Intellectual Property Management Co., Ltd.
06/25/15
20150179851

Biaxially stretched polyester film for protecting back surface of solar cell, and producing polyester resin


A biaxially stretched polyester film for protecting a back surface of a solar cell, containing a polyester resin that is polymerized with addition of a ti catalyst, a mg compound, a p compound and a nitrogen-containing heterocyclic compound, and having a volume resistivity at 285° c. Is 10×107 Ω·cm or less, is improved in hydrolysis resistance and electrostatic adhesion property..
Fujifilm Corporation
06/25/15
20150179804

Semiconductor device


The semiconductor device includes a transistor including an oxide semiconductor film having a channel formation region, a gate insulating film, and a gate electrode layer. In the transistor, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the thickness of the gate insulating film is large (equivalent oxide thickness which is obtained by converting into a thickness of silicon oxide containing nitrogen is 5 nm or more and 50 nm or less, preferably 10 nm or more and 40 nm or less).
Semiconductor Energy Laboratory Co., Ltd.
06/25/15
20150179640

Common fabrication of different semiconductor devices with different threshold voltages


A multi-device semiconductor structure including a p-type logic device, a p-type memory device, a n-type logic device and a n-type memory device are provided on a bulk silicon substrate. Each of these devices includes a dielectric layer and either a n-type or a p-type work function layer disposed over the dielectric layer.
Globalfoundries Inc.
06/25/15
20150179459

Multi-plasma nitridation process for a gate dielectric


A gate dielectric can be formed by depositing a first silicon oxide material by a first atomic layer deposition process. The thickness of the first silicon oxide material is selected to correspond to at least 10 deposition cycles of the first atomic layer deposition process.
International Business Machines Corporation
06/25/15
20150179448

Methods for forming crystalline igzo through annealing


Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (igzo). A substrate is provided.
Intermolecular, Inc.
06/25/15
20150179443

Cyclical deposition of germanium


In some aspects, methods for forming a germanium thin film using a cyclical deposition process are provided. In some embodiments, the germanium thin film is formed on a substrate in a reaction chamber, and the process includes one or more deposition cycles of alternately and sequentially contacting the substrate with a vapor phase germanium precursor and a nitrogen reactant.
Asm Ip Holding B.v.
06/25/15
20150179437

Method for manufacturing a silicon nitride thin film


A method for manufacturing a silicon nitride thin film comprises a step of charging silane, ammonia gas and nitrogen gas at an environment temperature below 350° c. To produce and deposit a silicon nitride thin film, wherein a rate of charging silane is 300-350 sccm, a rate of charging ammonia gas is 1000 sccm, a rate of charging nitrogen gas is 1000 sccm; a power of a high frequency source is 0.15˜0.30 kw, a power of a low frequency source is 0.15˜0.30 kw; a reaction pressure is 2.3˜2.6 torr; a reaction duration is 4˜6 s.
Csmc Technologies Fab1 Co., Ltd.
06/25/15
20150179430

Method for depositing an aluminium nitride layer


A method for depositing an aluminium nitride layer on a substrate is provided that comprises: providing a silicon substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; depositing an aluminium film onto the conditioned surface of the substrate by a sputtering method under an atmosphere of argon and depositing an epitaxial aluminium nitride layer on the aluminium film by a sputtering method under an atmosphere of nitrogen and argon.. .
Oerlikon Advanced Technologies Ag
06/25/15
20150179429

Method for treating surface of semiconductor layer, semiconductor substrate, making epitaxial substrate


A surface treatment method for a semiconductor layer includes growing a first layer on a substrate in a growth reactor, the first layer consisting of one of gallium nitride, aluminum gallium nitride and indium aluminium nitride; growing a second layer of gallium nitride on a surface of the first layer, the gallium nitride of the second gan layer having a composition ratio of gallium to nitrogen larger than 2; taking the substrate out of the growth reactor after growing the second layer; and removing the second layer after taking the substrate out of the growth reactor.. .
Sumitomo Electric Device Innovations, Inc.
06/25/15
20150179426

A-si seasoning effect to improve sin run-to-run uniformity


Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber.
Applied Materials, Inc.
06/25/15
20150179316

Methods of forming nitrides at low substrate temperatures


Provided are methods of forming nitrides at low substrate temperatures, such as less than 500° c. Or even less than 400° c.
Intermolecular Inc.
06/25/15
20150177633

Toner


A toner includes toner particles. The toner particles each include a toner core, silica particles located on a surface of the toner core, and a shell layer disposed over the surface of the toner core on which the silica particles are located.
Kyocera Document Solutions Inc.
06/25/15
20150177624

Method for manufacturing reflective mask and manufacturing reflective mask


According to one embodiment, a method for manufacturing a reflective mask includes: forming a reflection layer on a major surface of a substrate; forming a capping layer containing ruthenium on the reflection layer; forming an absorption layer on the capping layer; forming a pattern region in the absorption layer; removing a first resist mask used in forming the pattern region; and forming a light blocking region surrounding the pattern region in the absorption layer, the capping layer, and the reflection layer. The removing the first resist mask used in forming the pattern region includes: performing dry ashing processing using a mixed gas of ammonia gas and nitrogen gas or only ammonia gas..
Shibaura Mechatronics Corporation
06/25/15
20150177418

Fluoro-containing ether monomer for fabricating contact lenses, contact lenses materials and contact lenses obtained therefrom


In formula (i), r10 is fluoroalkyl group (cxfyhz, wherein x is an integer of 2-20, y is an integer of 5-30, and y+z=2x−1), r11 is oxygen, nitrogen or sulfur; r12 is c1-c3 alkylene; n is an integer of 3-40.. .
06/25/15
20150176890

Cryogenically treated audio/video cable and method thereof


An audio cable is cryogenically treated in a cryogenic chamber. The cable is disposed within the cryogenic chamber.
Fender Musical Instruments Corporation
06/25/15
20150176458

Method and system for purifying nox in internal combustion engine


In a method for purifying nox in an internal combustion engine, a catalyst of a nitrogen oxide purification device is regenerated by control of an air-fuel ratio (lean→rich) through one or more control of an engine fuel injection device (10-1), a throttle valve (10-2), and an egr valve (10-3) in an intermediate/high-load operating condition. On the other hand, a nitrogen oxide purification catalyst is regenerated through a chemical reaction between nitrogen oxides and hydrocarbon generated during the injection of fuel in a secondary fuel injection device in a low-load operating condition.
Hyundai Motor Company
06/25/15
20150176456

Method of determining correcting logic for reacting model of selective catalytic reduction catalyst, correcting parameters of reacting model of selective catalytic reduction catalyst and exhaust system using the same


Disclosed are a method of determining a correcting logic for a reacting model of an scr catalyst, a method of correcting parameters of the reacting model of the scr catalyst and an exhaust system to which the methods are applied. The reacting model of the scr catalyst is defined by m parameters and has n input variables, where m and n are natural numbers with n smaller than m.
Fev Gmbh
06/25/15
20150176453

Urea solution injection device


The purpose of the present invention is to provide an exhaust purification device that is capable of adding an appropriate amount of urea solution without the need to directly measure the nox emissions amount using an nox measuring means. The exhaust purification device uses urea solution as a reducing agent for reducing nitrogen oxides within exhaust, and is provided with a temperature sensor, a humidity sensor, and a control device.
Japan Ships Machinery & Equipment Association
06/25/15
20150176155

Diamond single crystal, producing the same, and single crystal diamond tool


A method for producing a diamond single crystal includes implanting an ion other than carbon into a surface of a diamond single crystal seed substrate and thereby decreasing the transmittance of light having a wavelength of 800 nm, the surface having an off-angle of 7 degrees or less with respect to a {100} plane, and homoepitaxially growing a diamond single crystal on the ion-implanted surface of the seed substrate using a chemical vapor synthesis under synthesis conditions where the ratio nc/nh of the number of carbon-containing molecules nc to the number of hydrogen molecules nh in a gas phase is 10% or more and 40% or less, the ratio nn/nc of the number of nitrogen molecules nn to the number of carbon-containing molecules nc in the gas phase is 0.1% or more and 10% or less, and the seed substrate temperature t is 850° c. Or more and less than 1000° c..
Sumitomo Electric Industries, Ltd.
06/25/15
20150176114

Method for producing at least one component and open-loop and/or closed-loop control device


The disclosure relates to a method for producing at least one, in particular metal, component, preferably a cylinder head, a nozzle body for a high-pressure injection pump, a component of a diesel injection engine, or a throttle disk, by means of low-pressure carbonitriding in at least one treatment chamber, which preferably can be evacuated, and an open-loop and/or closed-loop control device, which enables the setting of a specified ratio between a carbon concentration and a nitrogen concentration in a surface layer of the at least one component. In at least one treatment phase, a carbon-providing gas and a nitrogen-providing gas are simultaneously introduced into the treatment chamber.
Robert Bosch Gmbh
06/25/15
20150176023

Transgenic plants expressing a ph-sensitive nitrate transporter


The invention relates to transgenic plants with improved growth and nitrogen use efficiency expressing nitrate transporter gene, methods of making such plants and methods for improving growth and nitrogen use efficiency.. .
Plant Bioscience Limited
06/25/15
20150176021

Use of cad genes to increase nitrogen use efficiency and low nitrogen tolerance to a plant


Provided are methods of increasing nitrogen use efficiency, fertilizer use efficiency, yield, growth rate, vigor, biomass, oil content and/or abiotic stress tolerance of a plant by expressing within the plant an exogenous polynucleotide comprising a nucleic acid sequence encoding a polypeptide at least 80% identical to seq id no: 2560, 2557, 184, 238, 188, 154-156, 158-161, 163-183, 185-187, 189-197, 200-237, 239-264, 266-269, 1351, 1365-1425, 1429-1457, 1459, 1461-1730, 1735, 1739-2397, 2533-2541, 2544-2556, 2558, 2559, 2561-2562 or 2563. Also provided are isolated polynucleotides and polypeptides which can be used to increase nitrogen use efficiency, fertilizer use efficiency, yield, growth rate, vigor, biomass, oil content and/or abiotic stress tolerance of a plant of a plant..
Evogene Ltd.
06/25/15
20150175929

Lubricating oil composition for automobile engine lubrication


Provided is a lubricating oil composition that is highly fuel-efficient and has high wear resistance and is particularly suited for lubrication of a motorcycle four-cycle gasoline engine or a diesel engine vehicle having an exhaust gas after-treatment device. The lubricating oil composition, which is a lubricating oil composition having an sae viscosity grade of 5w20, comprises a base oil and predetermined amounts of additive components comprising of a nitrogen-containing ash-free dispersant, an alkali earth metal-containing detergent, a phosphorus-containing anti-wear agent, an antioxidant, and a viscosity index-improving agent, wherein the viscosity index is within a range of 140 to 230, the high-shear viscosity at 150° c.
Chevron Japan Ltd
06/25/15
20150175916

Method and system for purifying synthesis gas, in particular for ammonia synthesis


The invention relates to a method for purifying synthesis gas, in particular for ammonia synthesis, wherein a partial stream (26) of an h2-rich, co-containing synthesis gas stream is burned, in particular to generate electrical energy, and wherein at least one component contained in the remaining h2-rich, co-containing synthesis gas stream (26a), in particular in the form of carbon dioxide, methanol and/or water, is absorbed by an adsorber at low temperatures, after which said absorbed component is desorbed from the adsorber by flushing using nitrogen (33) at higher temperatures. According to the invention the h2-rich partial stream (26) is diluted using the nitrogen (35) used for the flushing before being burned.
Linde Aktiengesellschaft
06/25/15
20150175879

Tight gas stimulation by in-situ nitrogen generation


Provided is a method and composition for the in-situ generation of synthetic sweet spots in tight-gas formations. The composition can include nitrogen generating compounds, which upon activation, react to generate heat and nitrogen gas.
Saudi Arabian Oil Company
06/25/15
20150175829

Functionalized isobutylene-isoprene copolymer composition


A siloxane-functional isobutylene copolymer and use thereof is described. The copolymer is of the formula: <please insert the chemical formula here as it appears in the paper copy.> wherein a is at least 20, and at least one of b and c are at least one, x is oxygen or nitrogen; r1 is a covalent bond or a divalent (hetero)hydrocarbyl group; sil is a polydialkylsiloxane; and x is 1 or 2..
3m Innovative Properties Company
06/25/15
20150175822

Radiation curable fluids


A radiation curable fluid includes a vinylether (meth)acrylate monomer, a compound including a sulfonic acid group, and a polymeric dispersant including heterocyclic groups having hetero atoms consisting of one or two nitrogen atoms.. .
Agfa Graphics Nv
06/25/15
20150175763

Natural fibre and production and use in modular construction


The present invention provides a method of producing reinforced composite containing fibre in a polymer matrix comprising the steps of: a. Heating and drying a natural fibre-containing material in a hot blending chamber; b.
Sunkeeper Limited
06/25/15
20150175733

Fluoro-containing ether monomer for fabricating contact lenses, contact lenses materials and contact lenses obtained therefrom


In formula (i), r10 is fluoroalkyl group (cxfyhz, wherein x is an integer of 2-20, y is an integer of 5-30, and y+z=2x+1), r11 is oxygen, nitrogen or sulfur; r12 is c1-c3 alkylene; n is an integer of 3-40.. .
06/25/15
20150175588

N-(tetrazol-5-yl)- and n-(triazol-5-yl)arylcarboxylic thioamides and use thereof as herbicides


In this formula (i), r, w, x and z represent radicals such as hydrogen, organic radicals such as alkyl, and other radicals such as halogen. A and b each represent carbon or nitrogen..
06/25/15
20150175551

2-aminonicotinic acid ester derivative and bactericide containing same as active ingredient


(wherein, r1 represents a hydrogen atom or a c1-c4 alkyl group, r2 represents a hydrogen atom or a c1-c4 alkyl group, r1 and r2 may be combined together to form an alkylene chain, r3 represents a hydrogen atom or a c1-c4 alkyl group, r4 represents a hydrogen atom, a cyano group or a c1-c4 alkyl group, r5 and r6 independently represent a hydrogen atom, a halogen atom, a c1-c4 alkyl group, a c1-c4 alkoxy group, a c1-c4 alkylthio group, a c1-c4 alkylsulfinyl group, a c1-c4 alkylsulfonyl group, a nitro group, a cyano group, a c1-c4 haloalkyl group, a c1-c4 haloalkoxy group or a c1-c4 haloalkylthio group, a and b independently represent a methine (ch) group or a nitrogen atom).. .
06/25/15
20150175541

Partially saturated nitrogen-containing heterocyclic compound


W, y, r2, r3, r4, and y4 are as described hereinabove), or pharmaceutically acceptable salts thereof.. .
06/25/15
20150175533

Use of urea synthesis purge gas in an integrated ammonia-urea process and related plant


An ammonia-urea plant where purge gas stream (3) generated in the urea section is used as ammonia source for selective catalytic reduction of nitrogen oxides in combustion fumes (4) which are emitted by the ammonia section; a related process and a method for modification of an ammonia-urea plant are also disclosed.. .
Casale Sa
06/25/15
20150175456

Biological denitrogenation method using slow release solid carbon source


Disclosed is a method for biological denitrification of water body polluted by nitrates using sustained-release solid carbon sources comprising the following steps: add cassava lees into water body polluted by nitrates for denitrification of the waste water, it can achieve the purpose of biological nitrogen removal through slowly releasing organic carbons as carbon sources for microbial denitrification in the water by cassava lees and the cassava lees losing the carbon-releasing function can be naturally degraded in the environment without causing secondary pollution.. .
Tongji University
06/25/15
20150175421

Method for manufacturing aluminum nitride powder


A method for manufacturing aluminum nitride powder includes steps of: preparing a polymer powder, a wood powder having grain size similar with that of the polymer powder, and an alumina powder; and mixing the polymer powder, the wood powder and the alumina powder uniformly and forming granules to be carried out a single-replacement reaction by exposing the granules in a nitrogen-containing atmosphere at a temperature of 1680-1850° c.. .
Chung-shan Institute Of Science And Technology, Armaments Bureau, M.n.d.


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