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Nitrogen patents



      
           
This page is updated frequently with new Nitrogen-related patent applications. Subscribe to the Nitrogen RSS feed to automatically get the update: related Nitrogen RSS feeds. RSS updates for this page: Nitrogen RSS RSS


Synergized pgm catalyst systems including palladium for twc application

Clean Diesel Technologies (cdti)

Synergized pgm catalyst systems including palladium for twc application

Environmental management zone modeling and analysis

Pioneer Hi-bred International

Environmental management zone modeling and analysis


Date/App# patent app List of recent Nitrogen-related patents
08/27/15
20150243905 
 Biscarbazole derivative host materials and green emitter for oled emissive region patent thumbnailnew patent Biscarbazole derivative host materials and green emitter for oled emissive region
An organic electroluminescence device utilizes a novel combination comprising one or more biscarbazole derivative compounds as the phosphorescent host material in combination with a green phosphorescent dopant material in the light emitting region of the device, where the biscarbazole derivative compounds are represented by a formula (1a) or (1b) below; where a1 represents a substituted or unsubstituted nitrogen-containing heterocyclic group having 1 to 30 ring carbon atoms; a2 represents a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 ring carbon atoms, or substituted or unsubstituted nitrogen-containing heterocyclic group having 1 to 30 ring carbon atoms; x1 and x2 each are a linking group; y1 to y4 each represent a substituent; p and q represent an integer of 1 to 4; and r and s represent an integer of 1 to 3; and the green phosphorescent dopant material is a phosphorescent organometallic complex having a chemical structure represented by ll′l″m wherein m is a metal that forms octahedral complexes, l, l′, and l″ are equivalent or inequivalent bidentate ligands wherein each l comprises a substituted or unsubstituted phenylpyridine ligand coordinated to m through an sp2 hybridized carbon and n; and, one of l, l′ and l″ is different from at least one of the other two.. .
Universal Display Corporation


08/27/15
20150243900 
 Organic electroluminescent device having specific diamine compound patent thumbnailnew patent Organic electroluminescent device having specific diamine compound
In formula (1), l represents a linking group; a1, a2, a3, a4, a5, a6, a7, a8, a9, and a10 each independently represent a carbon atom or a nitrogen atom, provided that at least two of a1, a5, a6, and a10 each represent a carbon atom having r′; r′ represents a substituent having a carbon atom at a bonding position thereof; a plurality of rs each independently represent a substituent; m represents an integer; and n represents an integer of 2 to 10.. .

08/27/15
20150243893 
 Organic electroluminescent materials and devices patent thumbnailnew patent Organic electroluminescent materials and devices
The present disclosure provides novel compounds based on azadibenzothiophenes, azadibenzofurans and azadibenzoselenophenes with at least two nitrogen atoms in the aza rings. The compounds can be used in green, red, yellow and white emitting devices as electron-transporting hosts..
Universal Display Corporation


08/27/15
20150243507 
 Method of manufacturing semiconductor device patent thumbnailnew patent Method of manufacturing semiconductor device
The method of manufacturing a semiconductor device in accordance with the present invention provides a metal-containing film capable of adjusting a work function. The including: (a) alternately supplying a first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and at least one selected from the group consisting of a ligand of a methyl group, a ligand of an ethyl group and a ligand of a cyclopenta-based group onto a substrate in a process chamber to form a composite metal-containing film on the substrate; and (b) alternately supplying a third source containing a third metal element and a fourth source containing nitrogen onto the substrate in the process chamber to form a metal nitride film on the composite metal-containing film..
Hitachi Kokusai Electric Inc.


08/27/15
20150243498 
 Method of manufacturing semiconductor device and substrate processing method patent thumbnailnew patent Method of manufacturing semiconductor device and substrate processing method
A method of manufacturing a semiconductor device for forming a thin film having characteristics of low permittivity, high etching resistance and high leak resistance is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times.
Hitachi Kokusai Electric Inc.


08/27/15
20150243417 
 Method and equipment for processing ndfeb rare earth permanent magnetic alloy with hydrogen pulverization patent thumbnailnew patent Method and equipment for processing ndfeb rare earth permanent magnetic alloy with hydrogen pulverization
A method and an equipment for processing ndfeb rare earth permanent magnetic alloy with a hydrogen pulverization are provided. The method includes steps of: providing a continuous hydrogen pulverization equipment; while driving by a transmission device, passing a charging box loaded with rare earth permanent magnetic alloy flakes orderly through a hydrogen absorption chamber, having a temperature of 50-350° c.
Shenyang General Magnetic Co., Ltd.


08/27/15
20150242970 
 Environmental management zone modeling and analysis patent thumbnailnew patent Environmental management zone modeling and analysis
Methods and systems for crop management are disclosed. An example method can comprise receiving first information associated with an environmental management zone.
Pioneer Hi-bred International, Inc.


08/27/15
20150240995 
 Modular pumping apparatus patent thumbnailnew patent Modular pumping apparatus
A modular pump is in fluid communication with a vaporizer which is in fluid communication with a coolant exchanger. A fluid such as a cryogenic liquid like liquid nitrogen or liquid carbon dioxide is pumped via a high pressure modular pump to the vaporizer where the liquid becomes gas.

08/27/15
20150240715 
 Power generation and methane recovery from methane hydrates patent thumbnailnew patent Power generation and methane recovery from methane hydrates
The present techniques are directed to a system and method for generating power and recovering methane from methane hydrates. The system includes a low emissions power plant configured to generate power, wherein an exhaust gas from the low emissions power plant provides a gas mixture including nitrogen and carbon dioxide.

08/27/15
20150240454 
 Work vehicle patent thumbnailnew patent Work vehicle
A work vehicle having a plurality of working modes allowing working in accordance with a load state includes an engine, an exhaust gas purification apparatus, a reducing agent tank, a state determination portion, and an engine control unit. The exhaust gas purification apparatus purifies a nitrogen oxide in an exhaust gas.
Komatsu Ltd.


08/27/15
20150240448 
new patent

Work vehicle


A work vehicle includes an engine, an exhaust gas purification apparatus, a reducing agent tank, an engine coolant circuit, a branch path, a valve, an accepting portion, and a valve control unit. The exhaust gas purification apparatus purifies a nitrogen oxide in an exhaust gas.
Komatsu Ltd.


08/27/15
20150240383 
new patent

Monocrystalline diamonds and methods of growing the same


A monocrystalline diamond having a corrected full width at half maxima after accounting for the rayleigh width of a 514.5 nm laser, and exhibiting: a presence or absence of negatively-charged silicon vacancy defect depending on the diamond quality; a concentration level of neutral substitutional nitrogen at an absorption coefficient of 270 nm; an ftir transmittance value at a 10.6 μm wavelength; a concentration of positively-charged substitutional nitrogen when the peak height is at 1332.5 cm−1; an absence of nitrogen-vacancy-hydrogen defect species when the wavelength is at 3123 cm−1; normalisation of spectra when the first order raman peak is at 552.37 nm using 514.5 nm laser excitation; either a black or white sector and having a refractive index of retardation to thickness of diamond plates; or a reddish glow and a blue glow when the diamond is placed under 355 nm laser irradiation at room temperature in the dark.. .
Iia Technologies Pte. Ltd.


08/27/15
20150240367 
new patent

Electrolytic apparatus, the efficient production of nitrogen trifluoride


An electrolytic cell which is partitioned into one or more anode chambers and cathode chambers by one or more partition walls between each anode chamber and cathode chamber, wherein each anode chamber comprises one or more anodes comprising an inner surface and an outer surface, and each cathode chamber comprises one or more cathodes, wherein the anode chamber and the cathode chamber are configured such that any one of the one or more cathodes is adjacent to the outer surface of the one or more anodes and there is no cathode adjacent to the inner surface of the one or more anodes; a molten salt electrolyte surrounding the one or more anodes and the one or more cathodes; at least one anode gas outlet for withdrawing gas from the anode chamber; and at least one cathode gas outlet for withdrawing gas from the cathode chamber.. .
Air Products And Chemicals, Inc.


08/27/15
20150240353 
new patent

Hard-coated tool and its production method


A hard-coated tool comprising a titanium carbonitride layer formed directly on a wc-based cemented carbide substrate by a chemical vapor deposition method; the titanium carbonitride layer having a composition comprising 74-81% by mass of titanium, 13-16% by mass of carbon and 6-10% by mass of nitrogen; the titanium carbonitride layer having a structure comprising columnar crystal grains having an average transverse cross section diameter of 0.01-0.22 μm; a layer of w diffused from the substrate to the titanium carbonitride layer having an average thickness of 30-200 nm; and the titanium carbonitride layer having an x-ray diffraction peak of a (422) plane in a 2θ range of 122.7-123.7°.. .
Hitachi Tool Engineering, Ltd.


08/27/15
20150240347 
new patent

Component having a coating and the production thereof


The invention relates to a component having a coating containing chromium, nitrogen and carbon. According to the invention the coating comprises a sliding layer having a ceramic phase and a carbon phase, the ceramic phase forms a crystalline ceramic phase from crx(c1-yny) with 0.8=x=1.2 and y>0.7, and the crystalline ceramic phase and the carbon phase form a layer system of alternating individual layers (a, b), wherein the carbon phase has interstices that are filled with the crystalline ceramic phase..
Mahle International Gmbh


08/27/15
20150240342 
new patent

Method of manufacturing machine component


A method of manufacturing a machine component includes the steps of preparing a member made of steel containing 0.1 mass % or more of vanadium, forming a film containing vanadium at a surface of the member, and forming a nitrogen-enriched layer by heating the member having the film formed in a heat treatment gas atmosphere containing nitrogen gas and absent of ammonia gas. In the step of forming a film, the member is heated to and oxidized in a temperature range not lower than 500° c.
Ntn Corporation


08/27/15
20150240252 
new patent

Down-regulation of auxin responsive genes for improved plant performance


Methods for modulating plants using optimized zmsaur down-regulation constructs are disclosed. Also disclosed are nucleotide sequences, constructs, vectors, and modified plant cells, as well as transgenic plants displaying increased seed and/or biomass yield, improved tolerance to abiotic stress such as drought or high plant density, improved nitrogen utilization efficiency, increased ear tissue growth or kernel number..
Pioneer Hi-bred International, Inc.


08/27/15
20150240183 
new patent

Lubricant comprising a mixture of an olefin-ester copolymer with an ethylene alpha-olefin copolymer


A lubricant composition comprising an oil of lubricating viscosity having a kinematic viscosity at 100° c. Of less than 15 mm2/s; and an esterified copolymer with a backbone comprising units derived from (i) an α-olefin monomer of at least 6 carbon atoms and (ii) an ethylenically unsaturated carboxylic acid or derivative thereof, optionally containing nitrogen functionality; and an ethylene α-olefin copolymer comprising greater than 5 weight percent ethylene monomer units, exhibits good operating efficiency when used to lubricate a mechanical device..
The Lubrizol Corporation


08/27/15
20150240060 
new patent

Rubber composition for tire rim cushion or rubber finishing and pneumatic tire using the same


A composition formed by compounding from 55 to 75 parts by mass of a carbon black (1) having a nitrogen adsorption surface area of at least 35 m2/g and less than 50 m2/g and from 5 to 20 parts by mass of a carbon black (2) having a nitrogen adsorption surface area of at least 50 m2/g and at most 95 m2/g with 100 parts by mass of a rubber component including from 30 to 70 mass % of butadiene rubber having a cis-1,4 bond content of at least 97% and a mooney viscosity (ml1+4) of at least 45 at 100° c., a ratio (t-cp)/(ml1+4) of the viscosity of a 5 mass % toluene solution at 25° c. (t-cp) [cps] to the mooney viscosity being at least 2.0, and from 30 to 70 mass % of other diene rubbers; the total of the carbon blacks (1) and (2) being from 60 to 95 parts by mass..
The Yokohama Rubber Co., Ltd.


08/27/15
20150240055 
new patent

Epoxy resin compound and prepreg and copper-clad laminate manufactured using the compound


The present invention relates to an epoxy resin composition and a prepreg and a copper-clad laminate made by using same. The epoxy resin composition comprises components as follows: an epoxy resin containing 3 or more epoxy groups and containing nitrogen in the molecular chain, a phosphate salt compound and an active ester hardener; the amount of the epoxy resin containing 3 or more epoxy groups and containing nitrogen in the molecular chain is 100 parts by weight, the amount of the phosphate salt compound is 5˜50 parts by weight.
Shengyi Technology Co., Ltd.


08/27/15
20150240016 
new patent

Method of making diarlysilanediol containing polymers, polymer compositions and articles containing such polymers


A method of making a polymer with stable mooney viscosity and molecular weight is described. A conjugated diolefin is reacted in a hydrocarbon solvent in the presence of an initiator to form a polymer.
Firestone Polymers, Llc


08/27/15
20150239911 
new patent

Method for producing complex composed of organic nitrogen compound and copper (i) salt of fluorooxo acid


Disclosed is a method for producing a complex composed of an organic nitrogen compound and a copper (i) salt of a fluorooxo acid with high yield while reducing the corrosion of a reaction vessel. The complex can be produced with high yield while reducing the corrosion of a reaction vessel, by reacting a copper (i) salt, a fluorooxo acid salt and an organic nitrogen compound with one another..
Sumitomo Seika Chemicals Co., Ltd.


08/27/15
20150239899 
new patent

Production high-purity nitrogen-containing heterocyclic compound


(where r1 and r2 are each independently a hydrogen atom, a c1-6 alkyl group, etc., r3 is a hydrogen atom, a c1-6 alkyl group, etc., x is a hydrogen atom, etc.). .

08/27/15
20150239887 
new patent

Process for the preparation of dipeptidylpeptidase inhibitors


Provided is a process for the preparation of linagliptin of formula i, comprising deprotecting a compound of formula ii wherein r1 and r2 together with the nitrogen to which they are attached form a phthalimido group, wherein the aromatic ring of the phthalimido group is substituted with one or more r3 substituents selected from the group consisting of halogen, alkyi, nitro and amino; or r1 is h and r2 is selected from the group consisting of trialkylsilyl, 2-trialkylsilylethoxycarbamates, acetyl, trihaloacetyl, 9-fluorenylmethoxycarbonyl, trityl, alkylsulfonyl, arylsulfonyl, diphenylphosphine and sulfonylethoxycarbonyl.. .
Glenmark Generics Limited


08/27/15
20150239857 
new patent

(thio)morpholine derivatives as s1p modulators


The present invention relates to (thio)morpholine derivatives of the formula (i), wherein r1 is selected from cyano, (2-4c)alkynyl, (1-4c)alkyl, (3-6c)cycloalkyl, (4-6c)cycloalkenyl, (6-8c)bicycloalkyl, (8-10c)bicyclic group, each optionally substituted with (1-4c)alkyl, phenyl, biphenyl, naphthyl, each optionally substituted with one or more substituents independently selected from halogen, (1-4c)alkyl optionally substituted with one or more fluoro atoms, (2-4c)alkynyl, (1-4c)alkoxy optionally substituted with one or more fluoro atoms, amino, di(1-4c)alkylamino, —so2-(1-4c)alkyl, —co-(1-4c)alkyl, —co—o-(1-4c)alkyl, —nh—co-(1-4c)alkyl and (3-6c)cycloalkyl, phenyl substituted with phenoxy, benzyl, benzyloxy, phenylethyl or monocyclic heterocycle, each optionally substituted with (1-4c)alkyl, monocyclic heterocycle optionally substituted with halogen, (1-4c)alkyl or with phenyl optionally substituted with (1-4c)alkyl, and bicyclic heterocycle optionally substituted with (1-4c)alkyl; a is selected from —co—o—, —o—co—, —nh—co—, —co—nh, —c═c—, —cch3—o— and the linking group —y—(ch2)u—x— wherein y is attached to r1 and selected from a bond, —o—, —s—, —so—, —so2—, —ch2—o—, —co—, —o—co—, —co—o—, —co—nh—, —nh—co—, —c═c— and —c≡c—; n is an integer from 1 to 10; and x is attached to the phenylene/pyridyl group and selected from a bond, —o—, —s—, —so—, —so2—, —nh, —co—, —c═c— and —c≡c—; ring structure b optionally contains one nitrogen atom; r2 is h, (1-4c)alkyl optionally substituted with one or more fluoro atoms, (1-4c)alkoxy optionally substituted with one or more fluoro atoms, or halogen; and r3 is (1-4c)alkylene-r5 wherein the alkylene group may be substituted with (ch2)2 to form a cyclopropyl moiety or one or two halogen atoms, or r3 is (3-6c)cycloalkylene-r5 or —co—ch2—r5, wherein r5 is —oh, —po3h2, —opo3h2, —cooh, —coo(1-4c)alkyl or tetrazol-5-yl; r4 is h or (1-4c)alkyl; r6 is one or more substituents independently selected from h, (1-4c)alkyl or oxo; w is —o—, —s—, —so— or —so2—; or a pharmaceutically acceptable salt, a solvate or hydrate thereof; with the proviso that the derivative of formula (i) is not 2-(4-ethylphenyl)-4-morpholinoethanol or 4-[4-(2-hydroxyethyl)-2-morpholinyl]benzeneacetonitrile or a pharmaceutically acceptable salt, a solvate or hydrate thereof. The compounds of the invention have affinity to s1p receptors and may be used in the treatment, alleviation or prevention of s1p receptor mediated diseases and conditions..
Abbvie Bahamas Limited


08/27/15
20150239810 
new patent

Removal of nitrogen-containing impurities from alcohol compositions


A process for the treatment of an alcohol composition comprising nitrogen-containing contaminants, the process comprising contacting the alcohol composition in the vapour phase with an absorbent in an adsorption zone.. .
Bp P.l.c. A Corporation


08/27/15
20150239790 
new patent

Fertilizer compositions and methods of making the same


Fertilizer compositions are provided, where a fertilizer composition includes: an inner portion including a nitrogen containing material; and an outer portion covering the inner portion, the outer portion including a release agent (e.g. Htc, br)..
Alcoa Inc.


08/27/15
20150239788 
new patent

Fertilizer compositions comprising a cellulose nutrient component and methods for using same


Aspects of the invention include compositions for fertilizing and remediating soil. Compositions according to certain embodiments include a cellulose nutrient composition, a microbial blend composition, a source of nitrogen, a source of phosphorus and exotic micronutrients.

08/27/15
20150239786 
new patent

Method for providing a plant composition


A method of providing a plant nutrient composition, the method comprising: (a) contacting a cellulosic material with a composition comprising an amino compound; (b) contacting the cellulosic material with a composition comprising carbon dioxide, sulfur dioxide and mixtures thereof; (c) optionally, contacting the cellulosic material with a composition comprising a source of one or more elements selected from nitrogen, phosphorous, potassium, calcium, magnesium, sulphur, boron, cobalt, chlorine, copper, iron, manganese, molybdenum, zinc and sodium; (d) optionally, contacting the resultant material with a plant and/or a base growing medium.. .
Ccm Research Limited


08/27/15
20150239778 
new patent

Curable fiberglass binder comprising salt of inorganic acid


Formaldehyde-free binder compositions are described that include an aldehyde or ketone, a nitrogen-containing salt of an inorganic acid, and an acidic compound. The acidic compound may be an organic acid, such as maleic acid or citric acid among others.
Johns Manville


08/27/15
20150239761 
new patent

Recovery of resources from waste water


The present invention relates to a method of recovering resources from waste water and especially to a method of recovering nitrogen from sanitation or sewage water. A multi-chamber ion exchange bioreactor is incorporated into a septic tank system which has an anaerobic treatment chamber therein having a solid blanket containing anaerobic bacteria therein, followed by a multi-chamber ion exchange bioreactor having a plurality of ion exchange chambers forming a serpentine passage having each upflow chamber followed by a downflow chamber for the removal of nitrogen compounds from the effluent passing therethrough..

08/27/15
20150239204 
new patent

Multilayer nonwoven fabric and producing same


Provided are a multilayer nonwoven fabric having a meltblown nonwoven fabric layer and a spunbonded nonwoven fabric layer, the multilayer nonwoven fabric having high strength and high water pressure resistance, and a method for producing the same. The multilayer nonwoven fabric includes three or more layers, wherein two outermost layers are spunbonded nonwoven fabric layers, at least one inner layer is a meltblown nonwoven fabric layer, and a resin that forms the spunbonded nonwoven fabric layer has a melting endotherm Δh, as measured from a melting endothermic curve which is obtained by holding the resin at −10° c.
Idemitsu Kosan Co., Ltd.


08/27/15
20150239024 
new patent

Apparatus and on-site disposal of trace chemo containers and waste, expired pharmaceuticals, and sharps containers and sharps


Improved apparatus and method for on-site disposal of waste material including trace chemo, expired pharmaceuticals, and sharps, without the use of chemicals or incineration, and without requiring the waste material to be packaged and shipped to a location where incineration is allowed. The waste material is dropped into a high temperature crucible.

08/27/15
20150238976 
new patent

Composition for dressing phosphate ore


Wherein r is a c7 to c21 alkyl or alkenyl group, which sarcosinate may be present in the form of a cation derived therefrom caused by protonation of the nitrogen atom, wherein the amount of fatty acid is from 70 to 99 wt.-%, and wherein the amount of the sarcosinate of the formula (i) is from 1 to 30 wt.-%.. .

08/27/15
20150238941 
new patent

Synergized pgm catalyst systems including platinum for twc application


Synergized platinum group metals (spgm) catalyst system for twc application is disclosed. Disclosed spgm catalyst system may include a washcoat that includes stoichiometric cu—mn spinel structure, supported on doped zro2, and an overcoat that includes pgm, such as platinum (pt) supported on carrier material oxides, such as alumina.
Clean Diesel Technologies Inc. (cdti)


08/27/15
20150238940 
new patent

Synergized pgm catalyst systems including palladium for twc application


Synergized platinum group metals (spgm) catalyst system for twc application is disclosed. Disclosed spgm catalyst system may include a washcoat with a cu—mn stoichiometric spinel structure and an overcoat that includes pgm, such as palladium (pd) supported on carrier material oxides, such as alumina.
Clean Diesel Technologies Inc. (cdti)


08/27/15
20150238903 
new patent

Efficient lean nox trap regeneration with enchanced ammonia formation


A method is disclosed of providing a fuel efficient regeneration of an exhaust after-treatment (at) system that includes a lean oxides of nitrogen (nox) trap (lnt) and a selective catalytic reduction filter (scrf) positioned downstream of the lnt. The method includes regulating a selectable position valve.
Gm Global Technology Operations Llc


08/27/15
20150238896 
new patent

Removal of atmospheric pollutants from gas, related apparatus, processes and uses thereof


Methods related generally to the removal of atmospheric pollutants from the gas phase, are provided, as well as related apparatus, processes and uses thereof. A single-stage air scrubbing apparatus is provided that includes at least one reaction vessel, at least one introduction duct, and a turbulence component, wherein a residence time is sufficient to allow the conversion of at least one atmospheric pollution compound to at least one other compound, molecule or atom.

08/27/15
20150238721 
new patent

Electronic e-cylinder


An electronic e-cylinder is provided which is small in size and allows for connection to a ventilator cart having a standard yolk structure which is known in the medical industry for connection of standard e-cylinders. The machine may have oxygen output of up to 10 liters per minute at greater than 40 psig and desirably about 50 to 60 psig.
Vetland Medical Sales And Services, Llc


08/27/15
20150237988 
new patent

Fiber composite for application of a liquid


Provided is a fiber composite for the application of a liquid, including a fibrous member containing a porous carbon material having a specific surface area value by the nitrogen bet method of 10 m2/g or more, and a pore volume by the bjh method of 0.2 cm3/g or more.. .
Sony Corporation


08/27/15
20150237882 
new patent

Process for producing oven-type confectionery products without additives, frozen/lowered in temperature, with quick recovery before eating them


A process is described for producing oven-type confectionery products without additives, frozen/lowered in temperature, with quick recovery before eating them, that comprises the steps of: completely cooking the confectionery product; immediately freezing/lowering in temperature the cooked confectionery product by using liquid nitrogen; packaging the confectionery product frozen/lowered in temperature; and possibly storing and transporting the packaged confectionery product.. .
Dolciaria Orsobianco S.r.l.


08/27/15
20150237862 
new patent

Methods of pest control in soybean


The present invention provides methods comprising applying to a crop of soybean plants, the locus thereof, or propagation material thereof, a compound a compound of formula (i) wherein —b1-b2-b3— is —c═n—o—, —c═n—ch2—, —n—ch2—ch2—, or —c═c—o—; r1 is trifluoromethyl, difluoromethyl or chlorodifluoromethyl; r2 is group (x) wherein x2 is c—x6 or nitrogen; x1, x3 and x6 are independently hydrogen, halogen or trihalomethyl, wherein at least one of x1, x3 and x6 is not hydrogen; a is selected from group (a1) to (a4) and y1, y2, y3, r5 and r8 are as defined in claim 1. The methods are preferably for the control of stinkbugs, in particular euschistus..
Syngenta Participations Ag


08/20/15
20150236353 

Fabrication and functionalization of a pure non-noble metal catalyst structure showing time stability for large scale applications


A pure and crystalline single-crystal nitrogen-functionalized graphene nano-flake powder comprising from 2 atomic % to at least 35 atomic % of total functionalized nitrogen within the graphene nano-flakes is disclosed. As well, the method of producing the nano-flakes that comprises injecting a carbon source into a thermal plasma system, dissociating the carbon source into carbon atomic species, transporting the carbon atomic species through a controlled nucleation zone to produce a crystalline graphene nano-flake structure, injecting the nitrogen source into the thermal plasma system dissociating the nitrogen source into nitrogen active species, and transporting the nitrogen atomic species to contact the crystalline graphene nano-flakes to produce the crystalline nitrogen-functionalized graphene nano-flakes is also disclosed.
The Royal Institution For The Advancement Of Learning / Mcgill University


08/20/15
20150236277 

Organic electroluminescent materials and devices


Where m is a metal having an atomic number greater than 40; x is 1, or 2; y is 1, or 2; and z is 0, 1, or 2; where x+y+z is the oxidation state of the metal m, where x1, x2, x3, and x4 are c or n; where at least one of r1, r2, r3, and r4 has at least two c atoms; where rb represents di, tri, or tetra-substitution, and where two adjacent rb for a six-member carbocyclic or heterocyclic ring e fused to ring b; where, when ring e is heterocyclic, the only heteroatom is nitrogen; where ring e can be further substituted; and where (a) at least one of x1, x2, x3, and x4 is n, (b) ring e is heterocylic, or (c) both.. .

08/20/15
20150236268 

Organic materials for organic light emitting devices


Novel diarylamino phenyl carbazole compounds are provided. By appropriately selecting the nature of the diarylamino substituent and the substitution on the carbazole nitrogen, compounds with appropriate homo and lumo energies can be obtained for use as materials in a secondary hole transport layer..
Universal Display Corporation


08/20/15
20150236259 

Switching components and memory units


Some embodiments include a switching component which includes a selector region between a pair of electrodes. The selector region contains silicon doped with one or more of nitrogen, oxygen, germanium and carbon.
Micron Technology, Inc.


08/20/15
20150236235 

Systems and methods for fabrication of superconducting circuits


In one aspect, fabricating a superconductive integrated circuit with a josephson junction includes applying oxygen or nitrogen to at least part of a structure formed from an outer superconductive layer to passivate an artifact, if any, left from removing the portion of the outer superconductive layer. In another aspect, a first superconductive layer is deposited, a second superconductive layer is deposited on the first superconductive layer, an oxide layer is formed on the first superconductive layer, a dielectric layer is deposited on the oxide layer, a portion of the dielectric layer is removed, a first portion of the oxide layer is removed, a second oxide portion is formed in place of the first portion of the oxide layer, and a third superconductive layer is deposited on the dielectric layer and the second oxide portion..
D-wave Systems Inc.


08/20/15
20150236193 

Method for producing group iii nitride semiconductor light-emitting device


The present techniques provide a method for producing a group iii nitride semiconductor light-emitting device, with suppression of an increase in polarity inversion defect density. The production method includes an n-type semiconductor layer formation step, a light-emitting layer formation step, and a p-type semiconductor layer formation step.
Toyoda Gosei Co., Ltd.


08/20/15
20150236168 

Semiconductor device


A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer.
Semiconductor Energy Laboratory Co., Ltd.


08/20/15
20150236165 

Semiconductor device


Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor.
Semiconductor Energy Laboratory Co., Ltd.


08/20/15
20150236089 

Manufacturing semiconductor device and semiconductor device


A manufacturing method of a junction field effect transistor includes the steps of: (a) forming an n+-type source layer on a surface of an n−-type drift layer formed on an n+-type sic substrate; (b) forming a plurality of shallow trenches disposed at predetermined intervals by etching the surface of the n−-type drift layer with a silicon oxide film formed on the n−-type drift layer used as a mask; (c) forming an n-type counter dope layer by doping the n−-type drift layer below each of the shallow trenches with nitrogen by using a vertical ion implantation method; (d) forming a sidewall spacer on each sidewall of the silicon oxide film and the shallow trenches; and (e) forming a p-type gate layer by doping the n−-type drift layer below each of shallow trenches with aluminum by using the vertical ion implantation method.. .
Renesas Electronics Corporation


08/20/15
20150235917 

Passivation layer and making a passivation layer


A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen..
Infineon Technologies Ag


08/20/15
20150235885 

Purge system, pod used with purge system, and load port apparatus


A system prevents oxidative gases in a foup which is fixed to an fims system in an open state from increasing over time. A tower type gas supply port extending from the bottom of the foup to inside is provided.
Tdk Corporation


08/20/15
20150235863 

Radical-component oxide etch


A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor.
Applied Materials, Inc.


08/20/15
20150235862 

Semiconductor device manufacturing method


A semiconductor device manufacturing method for etching a multilayer film using a mask is provided. The method includes (a) supplying a first gas containing hydrogen, hydrogen bromide, nitrogen trifluoride and at least one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the first gas to etch the multilayer film from a top surface of the multilayer film to a predetermined position in a stacked direction of the multilayer film; and (b) supplying a second gas that does not substantially contain hydrogen bromide and contains hydrogen and nitrogen trifluoride and at least one of thydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the second gas to etch the multilayer film from the predetermined position of the multilayer film to a top surface of the etching stop layer..
Tokyo Electron Limited


08/20/15
20150235843 

Method of manufacturing semiconductor device and substrate processing method


A method of manufacturing a semiconductor device is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by repeating a cycle.
Hitachi Kokusai Electric Inc.


08/20/15
20150235837 

Method for growing aluminum indium nitride films on silicon substrate


A method for growing aluminum indium nitride (alinn) films on silicon substrates comprises several steps: firstly, arranging a silicon substrate in a reaction chamber; secondly, providing multiple reaction gases in the reaction chamber, wherein the reaction gases include aluminum precursors, indium precursors and nitrogen-containing gases; finally, dynamically adjusting flow rates of the reaction gases and directly growing an alinn layer on the silicon substrate via a crystal growth process. By directly forming an alinn layer on the silicon substrate, lattice matching is increased, residual thermal stress is reduced and film quality is improved.
National Chiao Tung University


08/20/15
20150235835 

High growth rate process for conformal aluminum nitride


Methods of depositing conformal aluminum nitride films on semiconductor substrates are provided. Disclosed methods involve (a) exposing a substrate to an aluminum-containing precursor, (b) purging the aluminum-containing precursor for a duration insufficient to remove substantially all of the aluminum-containing precursor in gas phase, (c) exposing the substrate to a nitrogen-containing precursor to form aluminum nitride, (d) purging the nitrogen-containing precursor, and (e) repeating (a) through (d).
Lam Research Corporation


08/20/15
20150235661 

Magnetic write head characterization with nano-meter resolution using nitrogen vacancy color centers


A crystal film with one or more nitrogen vacancy centers is placed in close proximity to a recording head. A magnetic field or heat produced by the recording head as well as excitation illumination and an excitation field is applied to the crystal film.
Infinitum Solutions, Inc.


08/20/15
20150233274 

Device for storing and delivering an aqueous additive


The invention relates to a device for storing and delivering an aqueous additive for catalytic exhaust-gas denitrogenization in a motor vehicle. The device comprises a storage vessel (1) enclosing a storage volume (2), comprises at least one delivery pump (8) for the additive, and comprises means for heating at least parts of the storage volume (2), wherein the device is characterized in that the storage vessel (1) is at least partially of double-walled form..
Kautex Textron Gmbh & Co. Kg


08/20/15
20150233018 

Silicon carbide epitaxial substrate and manufacturing silicon carbide epitaxial substrate


A silicon carbide epitaxial substrate having a main surface (second main surface) includes: a base substrate; and a silicon carbide epitaxial layer formed on the base substrate and including the main surface (second main surface), the second main surface having a surface roughness of 0.6 nm or less, a ratio of standard deviation of a nitrogen concentration in the silicon carbide epitaxial layer at a surface layer including the main surface (second main surface) within a plane of the silicon carbide epitaxial substrate to an average value of the nitrogen concentration in the silicon carbide epitaxial layer at the surface layer within the plane of the silicon carbide epitaxial substrate being 15% or less.. .
Sumitomo Electric Industries, Ltd.


08/20/15
20150232986 

Cleaning method, manufacturing semiconductor device, substrate processing apparatus, and recording medium


A cleaning method includes performing a first cleaning process of supplying a fluorine-based gas from a first nozzle heated to a first temperature and a nitrogen oxide-based gas from a second nozzle heated to a first temperature into a process chamber heated to the first temperature in order to remove deposits including a film deposited on surfaces of members in the process chamber by a thermochemical reaction, changing an internal temperature of the process chamber to a second temperature higher than the first temperature, and performing a second cleaning process of supplying a fluorine-based gas from the first nozzle heated to the second temperature into the process chamber heated to the second temperature in order to remove substances remaining on the surfaces of the members in the process chamber after removing the deposits by the thermochemical reaction and to remove deposits deposited in the first nozzle by the thermochemical reaction.. .
Hitachi Kokusai Electric Inc.


08/20/15
20150232972 

Non-normalized steel composition and connecting rod using the same, and manufacturing the connecting rod


Disclosed are a non-normalized steel composition which includes carbon (c), silicon (si), manganese (mn), sulfur (s), vanadium (v), titanium (ti), nitrogen (n), and iron (fe), and a method of manufacturing the connecting rod for improving yield strength, fatigue strength, and the like of the connecting rod. The non-normalized steel composition includes carbon (c) in an amount of about 0.30 to 0.55 weight %, silicon (si) in an amount of about 0.80 to 1.20 weight %, manganese (mn) in an amount of about 0.80 to 1.20 weight %, sulfur (s) in an amount of about 0.06 to 0.10 weight %, vanadium (v) in an amount of about 0.20 to 0.35 weight %, titanium (ti) in an amount of about 0.01 to 0.20 weight %, nitrogen (n) in an amount of about 0.005 to 0.02 weight %, and the remainder of iron (fe), and inevitable impurities, based on a total weight of the composition..
Hyundai Motor Company


08/20/15
20150232870 

Transgenic plants with enhanced agronomic traits


This invention provides transgenic plant cells with recombinant dna for expression of proteins that are useful for imparting enhanced agronomic trait(s) to transgenic crop plants. This invention also provides transgenic plants and progeny seed comprising the transgenic plant cells where the plants are selected for having an enhanced trait selected from the group of traits consisting of enhanced water use efficiency, enhanced cold tolerance, increased yield, enhanced nitrogen use efficiency, enhanced seed protein and enhanced seed oil.
Monsanto Technology Llc


08/20/15
20150232868 

Down-regulation of bzip transcription factor genes for improved plant performance


Methods for modulating plants using optimized zmbzip down-regulation constructs are disclosed. Also disclosed are nucleotide sequences, constructs, vectors, and modified plant cells, as well as transgenic plants displaying increased seed and/or biomass yield, improved tolerance to abiotic stress such as drought or high plant density, improved nitrogen utilization efficiency, increased ear tissue growth or kernel number..
Pioneer Hi-bred International Inc.


08/20/15
20150232399 

Treatment of alcohols


A process for the treatment of an alcohol composition comprising nitrogen-containing contaminants, the process comprising contacting the alcohol composition with an adsorbent in an adsorption zone, wherein the adsorbent is a transition metal-loaded solid porous material selected from the group consisting of aluminosilicates, silica-aluminas, silicates and aluminas.. .
Bp P.l.c.


08/20/15
20150232385 

Alkali-activated aluminosilicate binder with superior freeze-thaw stability


We herewith propose the use of at least one nitrogen-containing organic compound and/or a salt thereof in combination with at least one aromatic carboxylic acid and/or a salt thereof for improving the freeze-thaw stability of an alkali-activated aluminosilicate binder, and a preferred alkali-activated aluminosilicate binder comprising ε-caprolactam and sodium benzoate as freeze-thaw stabilizers.. .
Construction Research & Technology Gmbh


08/20/15
20150232378 

Low-e panels with ternary metal oxide dielectric layer and forming the same


Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided.
Intermolecular Inc.


08/20/15
20150232336 

Method for producing bn-based nanoparticles and products therefrom


A method of forming boron nitride nanoparticles. A plurality of precursor molecules comprising boron, nitrogen and hydrogen may be decomposed in a first heating zone to form a plurality of gaseous molecules that contain bonded boron and nitrogen, followed by heating to a second, higher temperature thereby causing the gaseous molecules to react and nucleate to form a plurality of boron nitride nanoparticles.
Ph Matter, Llc


08/20/15
20150231620 

Iron-zeolite chabazite catalyst for use in nox reduction and making


An iron-zeolite chabazite (cha) catalyst is provided as an scr catalyst for reducing nitrogen oxides (nox) from vehicle engine exhausts. The catalyst is formed by incorporating iron during synthesis of the chabazite zeolite, which eliminates the need for a post-synthesis ion-exchange step and which results in the incorporation of iron into the (cha) zeolite crystal lattice structure.
Ford Global Technologies, Llc


08/20/15
20150231617 

Fe-sapo-34 catalyst for use in nox reduction and making


The system and methods described provide for an fe-sapo-34 catalyst in an scr catalyst for reducing nitrogen oxides (nox) from vehicle engine exhausts. In one example, the catalyst is formed by incorporating iron during synthesis of the sapo-34 zeolite, which allows iron to be incorporated into the zeolite crystal lattice structure and eliminates the post-synthesis ion-exchange step.
Ford Global Technologies, Llc


08/20/15
20150231565 

Method for the purification of diesel engine exhaust gases


A method in which the exhaust gas that is to be purified is passed through an exhaust-gas line containing a diesel oxidation catalyst (doc) for the oxidation of residual gaseous hydrocarbons (hc) and carbon monoxide (co) in order to form carbon dioxide (co2) and for the at least proportional oxidation of the nitrogen monoxide (no) contained in the exhaust gas in order to form nitrogen dioxide (no2) is provided.. .
Deutz Aktiengesellschaft


08/20/15
20150231551 

Oxygen concentrator pump systems and methods


Oxygen concentrator apparatus and method of use are described herein. The oxygen concentration may include at least one canister; gas separation adsorbent disposed in at least one canister, and a compression system.
Inova Labs, Inc., A Delaware Company


08/20/15
20150231040 

Dental composition


Dental composition comprising (i) a particulate filler; (ii) a polymerizable hydrolysis-stable compound of the following formula (1) axn wherein a is a linker group containing at least n nitrogen atoms and optionally one or more acidic groups, x are moieties containing a polymerizable double bond and forming an amide bond with a nitrogen atom of a, which x may be the same or different and are represented by the following formula (2) wherein r1 and r2 are independent from each other and represent a hydrogen atom, a c1-6 alkyl group or a group —(ch2)m—z, wherein z is coom, opo3m2, po3m2, so3m, and m is independently a hydrogen atom or a metal atom, and m is an integer of from 0 to 6, l is a bond, a c1-6 alkylene group; and n is an integer of at least 1; provided that at least one x cannot be a (meth)acryl group; and (iii) an initiator system.. .
Dentsply Detrey Gmbh


08/20/15
20150230477 

Composition comprising streptomyces scopuliridis kr-001 strain, or culture broth thereof as active ingredient for weed control


Disclosed herein is a composition containing a novel strain streptomyces scopuliridis kr-001 strain or a culture broth thereof as an active ingredient for weed control. More particularly, the streptomyces scopuliridis kr-001 strain of the present invention, culture broth thereof, or culture fraction shows an excellent weed-killing ability on grass weeds, broadleaf weeds, and hard-to-control weeds, and a medium composition containing a carbon source and a nitrogen source in an optimal condition may significantly increase yield of an active material produced by the strain with low cost.
Korea Research Institute Of Bioscience And Biotechnology


08/13/15
20150229100 

Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material


In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region.
Soraa Laser Diode, Inc.


08/13/15
20150228912 

Biscarbazole derivative, material for organic electroluminescence device and organic electroluminescence device using the same


In the formula (1): a1 represents a substituted or unsubstituted nitrogen-containing heterocyclic group having 1 to 30 ring carbon atoms; a2 represents a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 ring carbon atoms, or substituted or unsubstituted nitrogen-containing heterocyclic group having 1 to 30 ring carbon atoms; x1 and x2 each are a linking group; y1 to y4 each represent a substituent; p and q represent an integer of 1 to 4; and r and s represent an integer of 1 to 3.. .

08/13/15
20150228756 

Semiconductor device and manufacturing the same


A semiconductor device includes an alx1ga1-x1n (0≦x1≦1) barrier layer, and a gate electrode that is disposed on a surface of the alx1ga1-x1n (0≦x1≦1) barrier layer, forms a schottky junction with the surface of the alx1ga1-x1n (0≦x1≦1) barrier layer, and has an ni single-layer structure. Annealing processing is performed with respect to the gate electrode at a temperature of 500° c.
Mitsubishi Electric Corporation


08/13/15
20150228662 

Nonvolatile semiconductor memory device provided with charge storage layer in memory cell


A nonvolatile semiconductor memory device includes a semiconductor portion, a first oxygen-containing portion provided on the semiconductor portion, a silicon-containing portion provided on the first oxygen-containing portion, a first film provided on the silicon-containing portion and including a lamination of a first portion containing silicon and oxygen and a second portion containing silicon and nitrogen, a first high dielectric insulating portion provided on the first film and having an oxide-containing yttrium, hafnium or aluminum, a second oxygen-containing portion provided on the first high dielectric insulating portion, a second high dielectric insulating portion provided on the second oxygen-containing insulating portion and having an oxide-containing yttrium, hafnium or aluminum, a third oxygen-containing portion provided on the second high dielectric insulating portion, and a second film provided on the third oxygen-containing portion.. .
Kabushiki Kaisha Toshiba


08/13/15
20150228586 

Semiconductor device and manufacturing the same


A semiconductor device includes an interlayer insulating film ins2, adjacent cu wirings m1w formed in the interlayer insulating film ins2, and an insulating barrier film br1 which is in contact with a surface of the interlayer insulating film ins2 and surfaces of the cu wirings m1w and covers the interlayer insulating film ins2 and the cu wirings m1w. Between the adjacent cu wirings m1w, the interlayer insulating film ins2 has a damage layer dm1 on its surface, and has an electric field relaxation layer er1 having a higher nitrogen concentration than a nitrogen concentration of the damage layer dm1 at a position deeper than the damage layer dm1..
Renesas Electronics Corporation


08/13/15
20150228500 

Semiconductor device manufacturing method


In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film.
Tokyo Electron Limited


08/13/15
20150228484 

Iii-n semiconductor layer on si substrate


A method of growing iii-n semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial iii-n semiconductive material on the layer of low temperature epitaxial gallium nitride..

08/13/15
20150228458 

Plasma processing method and plasma processing apparatus


A plasma processing method performs an etching process (s101) of supplying a first fluorine-containing gas into a plasma processing space and etching a target substrate with plasma of the first fluorine-containing gas. Then, the plasma processing method performs a carbon-containing material removal process (s102) of supplying an o2 gas into the plasma processing space and removing, with plasma of the o2 gas, a carbon-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process.
Tokyo Electron Limited


08/13/15
20150227684 

Method to represent the nucleotide elements of a dna sequence as numerical elements to include cytosine being assigned the value zero, thymine being assigned the value one, adenine being assigned the value two and guanine being assigned the value three


Current study of the genomes of species is conducted by examining the nucleotides as represented by the first letter of the name that has by convention been arbitrarily given to the nitrogenous base that comprises each of the four different nucleotides that comprise deoxyribonucleic acids. Representing the four nucleotides that comprise dna by a specific number, rather than a letter, facilitates study of a numerical system and command instructions embedded in a sequence of dna.

08/13/15
20150227683 

Method to represent the nucleotide elements of a dna sequence as numerical elements to include cytosine being assigned the value one, thymine being assigned the value two, adenine being assigned the value three, and guanine being assigned the value four


Current study of the genomes of species is conducted by examining the nucleotides as represented by the first letter of the name that has by convention been arbitrarily given to the nitrogenous base that comprises each of the four different nucleotides that comprise deoxyribonucleic acids. Representing the four nucleotides that comprise dna by a specific number, rather than a letter, facilitates study of a numerical system and command instructions embedded in a sequence of dna.

08/13/15
20150227682 

Method to represent the nucleotide elements of dna as numerical elements to include adenine being assigned the value zero, guanine being assigned the value one, cytosine being assigned the value two and thymine being assigned the value three


Current study of the genomes of species is conducted by examining the nucleotides as represented by the first letter of the name that, by convention has been arbitrarily given to the nitrogenous base that comprises each of the four nucleotides that comprise deoxyribonucleic acids. Representing the four nucleotides that comprise dna by a specific number, rather than a letter, facilitates study of a numerical system and command instructions embedded in a sequence of dna.

08/13/15
20150227678 

Method to represent the nucleotide elements of a dna sequence as numerical elements to include adenine being assigned the value one, guanine being assigned the value two, cytosine being assigned the value three, and thymine being assigned the value four


Current study of the genomes of species is conducted by examining the nucleotides as represented by the first letter of the name that has by convention been arbitrarily given to the nitrogenous base that comprises each of the four different nucleotides that comprise deoxyribonucleic acids. Representing the four nucleotides that comprise dna by a specific number, rather than a letter, facilitates study of a numerical system and command instructions embedded in a sequence of dna.



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