|| List of recent Nitrogen-related patents
| Highly refractory rubber composition sheet|
To provide a highly refractory rubber composition sheet that retains a fixed shape until the thermal expansion residue formed by the heat of a fire or the like is formed, does not allow the thermal expansion residue from the heat formed by a fire or the like to easily detach and fall off of construction materials, such as steel framing and the like, and can prevent penetration of flames for at least two hours in the case of exposure to the flames of a fire or the like. [solution] the highly refractory rubber composition sheet is formed from a highly refractory rubber composition that contains a polyhydric alcohol (a), a nitrogen-containing foaming agent (b), a rubber substance (c), a flame resistant foaming agent (d), and titanium dioxide (e).
| Beta2-adrenoreceptor agonists|
Y is carbon or nitrogen and r1, r2, r3, r4, r5, r6, r7, r8, r9, r10, x, n, p, q and r are as defined in the specification, their preparation and their use as pharmaceuticals, particularly for the treatment of obstructive or inflammatory airways disease.. .
| Method for manufacturing semiconductor device and substrate processing apparatus|
To form an insulating film with extremely low concentration of impurities such as carbon, hydrogen, nitrogen, chlorine, etc in a film. There are provided the steps of forming a specific element-containing layer on a substrate by supplying source gas containing a specific element into a processing container in which the substrate is accommodated; changing the specific element-containing layer into a nitride layer, by activating and supplying gas containing nitrogen into the processing container; and changing the nitride layer into an oxide layer or an oxynitride layer, by activating and supplying gas containing oxygen into the processing container; with this cycle set as one cycle and performed for at least one or more times..
| Polishing slurry for cmp and polishing method|
A method including preparing a polishing slurry for cmp for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° c. Is 0.25 v or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively.
| Magnetic recording medium|
A magnetic recording medium includes a substrate having sequentially formed thereon a magnetic layer; a protective layer having a thickness ranging from 1.0 nm to 2.5 nm and being composed of an amorphous metal layer having a thickness of at least 0.3 nm formed on the magnetic layer, and a carbon layer composed of amorphous carbon having a thickness of at least 0.3 nm formed on the amorphous metal layer; and a lubricating layer, wherein the carbon layer includes nitrogen atoms in a surface thereof in which a ratio of number of nitrogen atoms to total number of carbon atoms, nitrogen atoms, and oxygen atoms is 14 atomic % or less. Recording performance is improved by reducing the thickness of the protective layer thereof.
| Method to produce light-emitting nano-particles of diamond|
Method to produce diamonds containing nitrogen-vacancy centres from diamonds grown by a high pressure and high temperature process and containing isolated substitutional nitrogen, comprising:—irradiating (12) said diamonds by an electron beam such that the irradiation dose is comprised between 1017 and 1019 electrons per square centimeter;—annealing (14) the irradiated diamonds in vacuum or in a inert atmosphere at a temperature above 700° c. And for at least 1 hour; characterized in that said electron beam has an acceleration energy above 7 mev..
| Process for producing particles|
In formula (i), r1 and r2 each independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, or alternatively, r1 and r2 are inked to each other to form a ring together with the nitrogen atom to which they are bound, m represents an integer of 2 to 9, mn+ represents h+ or an n-valent metal ion, and n represents an integer of 1 or 2.. .
| Systems, methods and compositions for the production of silicon nitride nanostructures|
Systems, methods and compositions for the production of silicon nitride nanostructures are herein disclosed. In at least one embodiment, a carbon feedstock is preprocessed, combined with a silicon feedstock and annealed in the presence of a nitrogen containing compound to produce a silicon nitride nanostructure..
| Ammonia oxidation catalyst, exhaust gas purification device using same, and exhaust gas purification method|
Ammonia oxidation catalyst being superior in heat resistance and capable of suppressing by-production of n2o and leakage of ammonia. The ammonia oxidation catalyst (amox) removes surplus ammonia, in selectively reducing nitrogen oxides by adding urea or ammonia and using a selective catalytic reduction (scr) catalyst, into exhaust gas, wherein the ammonia oxidation catalyst is made by coating at least two catalyst layers having a catalyst layer (lower layer) including a catalyst supported a noble metal element on a composite oxide (a) having titania and silica as main components, and a catalyst layer (upper layer) including a composite oxide (c) consisting of tungsten oxide, ceria, and zirconia, at the surface of an integral structure-type substrate, wherein a composition of the composite oxide (c) is tungsten oxide: 1 to 50% by weight, ceria: 1 to 60% by weight, and zirconia: 30 to 90% by weight..
| Titanium alloys including increased oxygen content and exhibiting improved mechanical properties|
One aspect of the present disclosure is directed to a metastable β titanium alloy comprising, in weight percentages: up to 0.05 nitrogen; up to 0.10 carbon; up to 0.015 hydrogen; up to 0.10 iron; greater than 0.20 oxygen; 14.00 to 16.00 molybdenum; titanium; and incidental impurities. Articles of manufacture including the alloy also are disclosed..
| Novel method of improving the mechanical properties of powder metallurgy parts by gas alloying|
The following specification describes a process for improving the hardness and other mechanical properties of iron and steel powder metallurgy (p/m) parts. The first stage of the novel process consists of heating to and holding at a temperature between 590° c.
| Systems and methods for lasing from a molecular gas|
Systems and methods for lasing molecular gases, and systems and methods of detecting molecular species are provided. The systems and methods can include the use of an excitation laser tuned to a wavelength associated with oxygen or nitrogen.
| Semiconductor device including buried gate, module and system, and method for manufacturing|
An embodiment of the semiconductor device includes a recess formed in an active region, a gate buried in a lower part of the recess, a first capping insulation film formed over the gate, a second capping insulation film formed over the first capping insulation film, and a third capping insulation film formed over the second capping insulation film. In the semiconductor device including the buried gate, mechanical stress caused by a nitride film can be reduced by reducing the volume of a nitride film in a capping insulation film formed over a buried gate, and the ratio of silicon to nitrogen of the nitride film is adjusted, so that mechanical stress is reduced, resulting in improvement of operation characteristics of the semiconductor device..
| Non-volatile memory device|
According to an embodiment, a non-volatile memory device includes a first conductive layer, a second conductive layer, and a resistance change layer provided between the first conductive layer and the second conductive layer. The resistance change layer is capable of making a transition between a low-resistance state and a high-resistance state, and includes an oxide containing at least one of hafnium (hf) and zirconium (zr), at least one selected from the group consisting of barium (ba), lanthanum (la), gadolinium (gd) and lutetium (lu), and nitrogen (n)..
| Conductive oxide film, display device, and method for forming conductive oxide film|
One embodiment of the present invention provides a conductive oxide film having high conductivity and high transmittance of visible light. The conductive oxide film having high conductivity and high transmittance of visible light can be obtained by forming a conductive oxide film at a high substrate temperature in the film formation and subjecting the conductive oxide film to nitrogen annealing treatment.
| Semiconductor device and manufacturing method of the same|
According to one embodiment, a nonvolatile semiconductor storage device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge accumulation film formed on the first insulating film, a second insulating film formed on the charge accumulation film, and a control electrode formed on a second insulating film, and one of the first and the second insulating film includes a layer containing nitrogen, a layer that is formed on the layer containing nitrogen and that includes a first oxygen containing aluminum atoms and oxygen atoms, and a layer that is formed on the layer including the first oxygen and that includes a second oxygen containing silicon atoms and oxygen atoms; and a concentration of the aluminum atoms is from 1e12 atoms/cm2 to 1e16 atoms/cm2.. .
| Nitride nanowires and method of producing such|
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, leds and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a cvd based selective area growth technique.
| Diamond sensors, detectors, and quantum devices|
A single crystal synthetic cvd diamond material comprising: a growth sector; and a plurality of point defects of one or more type within the growth sector, wherein at least one type of point defect is preferentially aligned within the growth sector, wherein at least 60% of said at least one type of point defect shows said preferential alignment, and wherein the at least one type of point defect is a negatively charged nitrogen-vacancy defect (nv−).. .
| Airflow-organization testing method for a clean room and system using the same method|
The present invention discloses an airflow-organization testing method for a clean room and a system using the same method, which are designed to solve the defects such as poor precision in the existing visual testing method. The airflow-organization testing method for a clean room according to the present invention uses a thermal imaging device to detect a sample gas-flow formed by a sample gas in the clean room, and the sample gas is a kind of gas, such as liquid nitrogen, dry ice or water vapor, with temperature difference from ambient air.
| Vehicular disc brake rotor and manufacturing method of vehicular disc brake rotor|
A vehicular disc brake rotor is provided with a cast-iron base, a nitrogen diffusion layer formed on the cast-iron base, a nitrogen compound layer formed on the nitrogen diffusion layer, and an iron oxide layer including fe3o4 and formed on the nitrogen compound layer. In a burnish and a first re-burnish of a “passenger car-braking device-dynamometer test procedures” (which is based on jaso c 406:2000), a change ratio of a frictional coefficient between the burnish and the first re-burnish is 10% or less..
| Manufacturing method of cast-iron friction member|
A cast-iron friction member is manufactured by: performing a nitrocarburizing treatment on a cast workpiece at a treatment temperature of 500° c. To 600° c.
| Redox couple for electrochemical and optoelectronic devices|
The present invention provides an improved redox couple for electrochemical and optoelectronic devices. The redox couple is based on a complex of a first row transition metal, said complex containing at least one mono-, bi-, or tridentate ligand comprising a substituted or unsubstituted ring or ring system comprising a five-membered n-containing heteroring and/or a six-membered ring comprising at least two heteroatoms, at least one of which being a nitrogen atom, said five- or six-membered heteroring, respectively, comprising at least one double bond.
| In-situ generation of the molecular etcher carbonyl fluoride or any of its variants and its use|
The molecular etcher carbonyl fluoride (cof2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as “materials”). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (pfc) having the general formula (cyfz) and/or an oxide of carbon (cox) to a nitrogen trifluoride (nf3) plasma into a chemical deposition chamber (cvd) chamber, thereby generating cof2.
| Method of preparing gas selective membrane using epoxy-functional siloxanes|
The present invention relates to a membrane including a reaction product of an epoxy-functional organopolysiloxane and an amino-functional curing agent, wherein the organopolysiloxane has an average of at least two silicon-bonded epoxy-substituted organic groups per molecule and the curing agent has an average of at least two nitrogen-bonded hydrogen atoms per molecule. The invention further relates to a method of separating gas components in a feed gas mixture by use of the membrane..
| Systems and methods for exhaust gas cleaning and/or ballast water treatment|
Embodiments of the present invention relate to a system and method for efficient removal of sulfur oxides (sox), nitrogen oxides (nox) and particulate matter (pm) contained in an exhaust gas generated from fuel combustion and efficient treatment of water containing microorganisms (e.g. Ballast water)..
| Stabilized n-alkyl thiosphoric triamide solvent systems for use in nitrogen fertilizer|
The invention relates to a composition containing a stabilized solvent ketone, ester, or glycol liquid concentrate of at least one n-alkyl thiophosphoric triamide and at least one surfactant. The invention also relates to methods of using the composition..
| Processes and systems for co-producing fermentation products, fertilizers, and distillers grains from starch-containing feedstocks, and compositions produced therefrom|
The present invention provides a process for producing a fertilizer composition from still bottoms obtained from milling of a starch-containing feedstock (such as corn), comprising separating still bottoms into a solids stream and a thin stillage stream; removing water to generate a condensed distillers solubles stream; and recovering the condensed distillers solubles stream as a fertilizer composition. Novel fertilizer compositions as well as novel distillers grains products are co-produced with a fermentation product (such as ethanol or isobutanol).
| Process for liquefying a hydrocarbon-rich fraction|
The mixed refrigerant of the mixed cycle comprises exclusively the component(s) nitrogen, methane and/or ethane.. .
| Use of nitrogen gas in thawing plates in a lin-based lyophilization unit|
This work is in simplifying the freezing and heating process required for a typical lyophilization process. From a liquid nitrogen supply tank called lin tank, calculated quantity of vaporized nitrogen is transported the use point where a heater that uses heating media heats up nitrogen to a desired temperature and pass into the annular space of the steel plate where lyophilized solvent such as water of solvent is deposited on the outer surface of the plate.
|Plants having altered agronomic characteristics under nitrogen limiting conditions and related constructs and methods involving genes encoding lnt2 polypeptides and homologs thereof|
Isolated polynucleotides and polypeptides and recombinant dna constructs particularly useful for altering agronomic characteristics of plants under nitrogen limiting conditions, compositions (such as plants or seeds) comprising these recombinant dna constructs, and methods utilizing these recombinant dna constructs. The recombinant dna construct comprises a polynucleotide operably linked to a promoter functional in a plant, wherein said polynucleotide encodes an lnt2 polypeptide..
|Isolated polynucleotides and polypeptides and methods of using same for increasing plant yield, biomass, growth rate, vigor, oil content, abiotic stress tolerance of plants and nitrogen use efficiency|
Provided are isolated polynucleotides encoding a polypeptide at least 80% homologous to the amino acid sequence selected from the group consisting of seq id nos: 757, 456-756, 758-774, 8385-10836, and 10838-14462; and isolated polynucleotide comprising nucleic acid sequences at least 80% identical to seq id no: 377, 1-376, 378-455, and 775-8384. Also provided are nucleic acid constructs comprising same, isolated polypeptides encoded thereby, transgenic cells and transgenic plants comprising same and methods of using same for increasing yield, biomass, growth rate, vigor, oil content, fiber yield, fiber quality, abiotic stress tolerance, and/or nitrogen use efficiency of a plant..
|Dive computer with free dive mode and wireless data transmission|
A dive computer with a free dive mode and/or wireless data transmission capabilities. In one embodiment the invention relates to a diving apparatus including a dive computer having a free dive mode, where the dive computer is configured to calculate a nitrogen loading in the free dive mode using a default value which is the fraction of oxygen in air, and where the free dive mode is used when a diver makes a dive without a self-contained underwater breathing apparatus.
|Nitrogen removal and methane conversion process using a supersonic flow reactor|
Methods and systems are provided for converting methane in a feed stream to acetylene. The method includes removing at least a portion of nitrogen from a hydrocarbon stream.
|Inorganic oxides removal and methane conversion process using a supersonic flow reactor|
Methods and systems are provided for converting methane in a feed stream to acetylene. The method includes removing at least a portion of oxides of nitrogen and sulfur from a hydrocarbon stream.
|Removal of nitrogen containing compounds and methane conversion process using a supersonic flow reactor|
Methods and systems are provided for converting methane in a feed stream to acetylene. The method includes removing at least a portion of nitrogen contaminants from a hydrocarbon stream.
|Production of higher hydrocarbons from a methane conversion process|
Methods and systems are provided for converting methane in a feed stream to acetylene. The hydrocarbon stream is introduced into a supersonic reactor and pyrolyzed to convert at least a portion of the methane to acetylene.
|Deodorized edible oil or fat with low levels of bound-mcpd and process of making using an inert gas|
A process for making a deodorized edible oil or fat having a low level of bound mcpd (monochloro propanediol esters) and/or low level of bound 3-mcpd is described. The process comprises a step of stripping the vegetable oil or fat with an inert gas.
|Substituted diketopiperazines and their use as oxytocin antagonists|
Wherein r1 is 2-indanyl, r2 is 1-methylpropyl, r3 is 2-methyl-1,3-oxazol-4-yl and r4 and r5 together with the nitrogen atom to which they are attached represents morpholino, process for their preparation, pharmaceutical compositions containing them and their use in medicine.. .
|Novel compound, charge transport material, and organic device|
The compounds represented fey the following general formula is is thermally stable and has excellent characteristics as a charge transport material [ar1 represents a single bond, a benzene ring, etc.; x1 represents a linking group that links via an oxygen atom, a sulfur atom, a carbon atom, a nitrogen atom, a phosphorus atom or a silicon atom; either one of l1 and l2, and l3 and l4 bond to each other to represent a linking group that links via an oxygen atom, a sulfur atom, a carbon atom, a nitrogen atom, a phosphorus atom or a silicon atom; the other of l1 and l2, and l3 and l4 represent a hydrogen atom or a substituent; y1 represents a linking group that links via a nitrogen atom, a boron atom or a phosphorus atom; r1, r2, r5 to r7 and r10 to r12 represent a hydrogen atom or a substituent; and n1 indicates an integer of 2 or more.].. .
|Hydraulic fracturing with improved viscosity liquefied industrial gas based solution|
The present invention is a cryogenic subterranean fracturing fluid, comprising a liquefied industrial gas and a viscosity increasing additive. The liquefied industrial gas may be liquefied carbon dioxide, liquefied nitrogen, or a blend of the two.
|Method for manufacturing silicon carbide semiconductor device|
A method for manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is heated in an atmosphere containing oxygen, so as to form a gate insulating film on and in contact with the silicon carbide substrate.
|Plasma processing method and plasma processing system|
In order to provide a plasma processing method and a plasma processing system which is capable of embedding a sin film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate 21, which is a target for plasma processing, by using plasma of a raw material gas containing silicon and hydrogen and of a gas containing nitrogen, the bias power to inject ions into the substrate 21 is set equal to or higher than a threshold to increase a si—h bonding amount, thereby reducing compression stress.. .
|Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium|
A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, carbon, nitrogen and a borazine ring skeleton on a substrate by performing a cycle for a first predetermined number of times. The cycle includes forming a first layer containing the predetermined element, a halogen group, carbon and nitrogen by supplying a first precursor gas containing the predetermined element and the halogen group and a second precursor gas containing the predetermined element and an amino group to the substrate, for a second predetermined number of times; and forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying a reaction gas containing a borazine compound to the substrate and allowing the first layer to react with the borazine compound to modify the first layer under a condition where the borazine ring skeleton in the borazine compound is maintained..
|Photomask blank, photomask, and method for manufacturing photomask blank|
A photomask blank for producing a photomask to which an arf excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided.
|Niobium nitride and method for producing same, niobium nitride-containing film and method for producing same, semiconductor, semiconductor device, photocatalyst, hydrogen generation device, and energy system|
The present invention is a niobium nitride which has a composition represented by the composition formula nb3n5 and in which a constituent element nb has a valence of substantially +5. The method for producing the niobium nitride of the present invention includes the step of nitriding an organic niobium compound by reacting the organic niobium compound with a nitrogen compound gas..
|Production of nitrogen compounds from a methane conversion process|
Methods and systems are provided for converting methane in a feed stream to acetylene. The hydrocarbon stream is introduced into a supersonic reactor and pyrolyzed to convert at least a portion of the methane to acetylene.
|Process for producing sulfuric acid with low levels of nitrogen oxides|
A process for producing sulfuric acid with reduced levels of nitrogen oxides (nox) within a typical sulfuric acid production line. A hydrazine source material can be mixed with a sulfuric acid effluent at a temperature of at least about 90° c.
|Denox of diesel engine exhaust gases using a temperature-controlled precatalyst for providing no2 in accordance with the requirements|
A process which solves the problem of supplying no2 in accordance with requirements by means of temperature control of the precatalyst which is decoupled from the operating state of the engine. In an associated apparatus, a precatalyst which contains at least one oxidation component and whose temperature can be controlled independently of the operating state of the engine and an active scr stage comprising an scr catalyst with upstream metering facility for a reducing agent from an external source are arranged in series.
|Ammonia detoxification device|
Provided is an ammonia detoxification device that, when detoxifying ammonia by thermal decomposition, is capable of preventing the generation of nitrogen oxides. That is, the problem is solved by configuring the ammonia detoxification device using: an electric heater; an ammonia decomposition chamber that accepts an ammonia-containing gas to be treated and thermally decomposes the ammonia in the absence of oxygen using heat from the electric heater; a thermally decomposed gas-burning chamber that accepts the nitrogen- and hydrogen-containing gas to be treated that has been generated by the thermal decomposition of the ammonia and discharged from the ammonia decomposition chamber, and an air-supplying means for supplying air from the outside into the thermally the thermally decomposed gas-burning chamber to burn the hydrogen..
A process for reducing free oxygen in a gaseous nitrogen stream includes the steps of (i) reforming a hydrocarbon to generate a gas mixture containing hydrogen and carbon oxides, (ii) mixing the gas mixture with a nitrogen stream containing free oxygen, and (iii) passing the resulting nitrogen gas mixture over a conversion catalyst that converts at least a portion of the free oxygen present in the nitrogen to steam wherein the hydrocarbon reforming step includes oxidation of a hydrocarbon using an oxygen-containing gas.. .
|Method of producing semiconductor wafer, semiconductor wafer, method of producing semiconductor device and semiconductor device|
There is provided a fabrication technique of a mos structure that has a small eot without increasing the interface trap density. More specifically, provided is a method of producing a semiconductor wafer that includes a semiconductor crystal layer, an interlayer made of an oxide, nitride, or oxynitride of a semiconductor crystal constituting the semiconductor crystal layer, and a first insulating layer made of an oxide and in which the semiconductor crystal layer, the interlayer, and the first insulating layer are arranged in the stated order.
|Transistor devices, memory cells, and arrays of memory cells|
A transistor device includes a pair of source/drain regions having a channel region there-between. A first gate is proximate the channel region.
|Method of forming group iii nitride semiconductor, method of fabricating semiconductor device, group iii nitride semiconductor device, method of performing thermal treatment|
A method of forming a group iii nitride semiconductor comprises: preparing a group iii nitride semiconductor which contains a p-type dopant or an n-type dopant; and performing a treatment of the group iii nitride semiconductor by using a reducing gas and a nitrogen source gas to form a conductive group iii nitride semiconductor. The treatment includes performing a first treatment of the group iii nitride semiconductor by using a first treatment gas including the reducing gas and the nitrogen source gas, which are supplied to a treatment apparatus at a first flow rate and a second flow rate, respectively, and after the first treatment is performed, performing a second treatment of the group iii nitride semiconductor by using a second treatment gas including the reducing gas and the nitrogen source gas, which are supplied to the treatment apparatus at a third flow rate and a fourth flow rate, respectively..
|Film formation method and nonvolatile memory device|
According to one embodiment, a film formation method can include irradiating a layer to be processed provided on an underlayer with an ionized gas cluster containing any one of oxygen and nitrogen to modify at least part of the layer.. .
An inorganic insulating film containing nitrogen, which has high adhesion to a sealant and an excellent effect of blocking hydrogen, water, and the like, is used as a layer in contact with the sealant. Further, the sealant is provided on the outer side than a side surface of an end portion of the organic insulating film provided over the transistor or the inorganic insulating film containing nitrogen is provided to cover an area from a region which is on the outer side than the edge of the organic insulating film to the side surface and the top surface of the end portion of the organic insulating film.
|Process for production of fluorescent substance|
The embodiment provides a process for production of an oxynitride fluorescent substance. In the process, a compound represented by the formula: (sr,eu)2si5n8, silicon nitride and aluminum nitride are mixed and then fired in a nitrogen atmosphere under high pressure..
|Reductant delivery unit for automotive selective catalytic reduction systems - active cooling|
A reductant delivery unit (rdu) delivers supplied reductant (aqueous urea solution) to the engine exhaust system. The delivered reductant is transformed into ammonia which then reacts with the exhaust oxides of nitrogen in a catalytic environment to produce nitrogen and h20.
|System for treating ballast water in ballast tanks|
A system for treating ballast water in ballast tanks onboard vessels is provided. The system comprises one or more ballast tanks, a circulation pump circulating or recirculating, via a tubing, ballast water from and to the one or more ballast tanks, a nitrogen and/or carbon dioxide generator connected to the tubing on the delivery side of the recirculation pump in such a manner that nitrogen and/or carbon dioxide can be supplied to the ballast water, and one or more nozzle heads functionally connected to the tubing and arranged in one or more ballast tanks.
|Maranagoni dry with low spin speed for charging release|
A method of cleaning and drying a semiconductor wafer including inserting a semiconductor wafer into a chamber of a cleaning tool, spinning the semiconductor wafer in a range of about 300 revolutions per minute to about 1600 revolutions per minute, and simultaneously spraying the semiconductor wafer with de-ionized water and a mixture of isopropyl alcohol and nitrogen.. .
|Aircraft fuel tank flammability reduction method and system|
An aircraft fuel tank flammability reduction method includes feeding pressurized air into an air separation module containing a carbon membrane, the air feed exhibiting a normal pressure of no more than 55 psig and the carbon membrane containing at least 95 weight percent carbon. The method includes producing nitrogen-enriched air from the air separation module as a result of removing oxygen from the air feed.
|Method and apparatus for separating air by cryogenic distillation|
A method for separating air is provided, in which a flow of oxygen-rich liquid is sent to a top of a pure oxygen column, having a pure oxygen reboiler, in which said flow is purified in order to form a vessel liquid containing at least 98 mol % of oxygen and the vessel liquid is drawn off as a product. A supercharged airflow at a second pressure is sent to the pure oxygen reboiler and to a liquid oxygen vaporizer; a nitrogen-rich gas is drawn from the top of the medium-pressure column and sent to an intermediate reboiler of the low-pressure column and the condensed gas is sent to the top of the medium-pressure column; and a nitrogen-rich gas or air is sent to a vessel reboiler of the low-pressure column and the liquid that condenses therein is sent to the medium-pressure column..
|Diesel emissions control after-treatment systems and related method|
A diesel emissions control system or diesel emissions control after- treatment (“decat”) system thermally stabilizes and catalyzes engine exhaust. The system generates substantial reduced volatile organic compounds (“vocs”) and hydrocarbons (“hcs”), as well as selective catalytic reduction (“scr”) of nitrogen oxides (“nox”).
|Pongamia genetic markers and method of use|
Primers suitable for nucleic acid sequence amplification of pongamia plant genetic markers and a method of genetic analysis of pongamia plants are provided. The primers comprise a repeat unit of two or three nucleotides repeated five to ten times together with a three prime extension of two or three nucleotides.
|Process for chemical synthesis from an alkenone made from a halogenated precursor|
Process for synthesizing a chemical, in particular an agriculturally or pharmaceutically active compound, including: a first step comprising reacting a carboxylic acid halide with a vinyl ether to prepare a halogenated precursor of an alkenone; a second step comprising eliminating hydrogen halide from such precursor to form an alkenone, preferably by thermolysis under specific conditions; and a third step which uses the formed alkenone as a building block to synthesize the chemical. First step may be done in a liquid reaction medium comprising an alkenone or a halogenated alkenone precursor, or in a liquid reaction medium in turbulent state, specifically by creation of gas bubbles of the carboxylic acid halide herein.
|Method for producing five-membered ring-containing compound|
The present invention provides a method that allows production of stereospecific and asymmetrical five-membered ring-containing compounds serving as synthetic intermediates for formation of five-membered rings of prostaglandins and the like, with high yield and excellent stereoselectivity in terms of diastereoselectivity and enantioselectivity in a short process without requiring troublesome procedures such as optical resolution. The method for producing a five-membered ring-containing compound includes a cyclization step of condensing and cyclizing an α,β-unsaturated nitro compound represented by the following chemical formula (i) with a 1,4-butanedione compound, in the presence of a catalyst formed by a compound having a pyrrolidine ring and an optically active α-carbon relative to the nitrogen on the ring, in a water-insoluble organic solvent and/or a non-oxygen atom-containing water-soluble organic solvent so as to produce the five-membered ring-containing compound represented by the following chemical formula (ii)..
|Process for producing a nitrogen-containing carbon alloy|
A nitrogen-containing carbon alloy obtained by baking an organic material having a nitrogen-containing crystalline organic compound having a molecular weight of 60 to 2000, wherein the nitrogen-containing crystalline organic compound excludes a nitrogen-containing metal complex.. .
|Heterocyclic compounds and thrombopoietin receptor activators|
Wherein a is a nitrogen atom or cr4, b is an oxygen atom, a sulfur atom or nr9 (provided that when a is a nitrogen atom, b is not nh), r1 is a c2-14 aryl group, l1 is a bond, cr10r11, an oxygen atom, a sulfur atom or nr12, x is or13, sr13 or nr14nr15, r2 is a hydrogen atom, a formyl group, a c1-10 alkyl group or the like, l2 is a bond or the like, l3 is a bond, cr17r18, an oxygen atom, a sulfur atom or nr19, l4 is a bond, cr20r21, an oxygen atom, a sulfur atom or nr22, y is an oxygen atom, a sulfur atom or nr23, and r3 is a c2-14 aryl group, a tautomer, prodrug or pharmaceutically acceptable salt of the compound or a solvate thereof.. .
|Modified conjugated diene rubber, method for producing same, and rubber composition|
A method containing a step of reacting a conjugated diene polymer having an alkali metal or alkaline earth metal active end with a hydrocarbyloxysilane compound having one or more of each of the following functional groups i and ii in its molecule to obtain a modified conjugated diene polymer containing a functional group ii, and a step of mixing the modified conjugated diene polymer and a compound such as organic acid. A modified conjugated diene rubber which can be used as a raw material of a cross-linked rubber which can be used in tire treads and the like and can enhance low fuel consumption performance is provided.
|Seeding process for the manufacture of polymer modified polyols|
Embodiments of the invention provide for polymer polyols and methods of producing polymer polyols. Methods include providing at least one first composition which includes at least one polyol, at least one isocyanate non-reactive seed population, and at least one of a co-reactant having an equivalent weight of up to 400 and at least one active hydrogen attached to a nitrogen or oxygen atom.
|Fine particle, high concentration, polyisocyanate polyaddition/polyurethane-urea polyols|
Embodiments of the invention include a method of producing polymer polyol dispersions is. The method includes providing at least one reaction system, and the reaction system includes: a) at least one polyol, b) at least one seed population, c) at least one catalyst, d) at least one co-reactant having an equivalent weight of up to 400 and at least one active hydrogen attached to a nitrogen or oxygen atom, and e) at least one polyisocyanate.
|Biofertilizers and bioherbicides|
Biofertilizer compositions, methods for increasing nitrogen levels in soil and methods of inhibiting undesirable plant growth generally include contacting the soil with a composition comprising dried distillers solubles derived from a dry milling corn ethanol processing; and contacting the soil with the soil in amounts effective to produce the desired result, e.g., increase nitrogen levels, inhibit undesirable plant growth, and the like.. .
|Flowable films using alternative silicon precursors|
Methods of depositing initially flowable dielectric films on substrates are described. The methods include introducing silicon-containing precursor to a deposition chamber that contains the substrate.
|Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus|
Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.. .
|Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium|
A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas.
|Plant cell culture for production of natural products with reduced glucosinolate contamination|
Disclosed are methods for obtaining a natural product preparation with reduced glucosinolate contamination from a plant of brassicaceae. The methods can include cultivating a plant callus from a plant capable of producing a desired natural product, selecting a callus with reduced glucosinolate production, and cultivating the selected callus in a liquid medium.