|| List of recent Memory Cell-related patents
| Pre-colored methodology of multiple patterning|
Some embodiments relate to a system that pre-colors word lines and control lines within a memory cell to avoid timing delays that result from processing variations introduced through multiple patterning lithography processes. The system has a memory element that stores a graphical ic layout with a memory circuit having layout features including a plurality of word lines and a plurality of y-control lines.
| Apparatus and method for encoding data for storage in multi-level nonvolatile memory|
A controller for a nonvolatile memory includes an encoder and a decoder. The memory includes memory cells that each store data using more than two levels.
| Adaptation of analog memory cell read thresholds using partial ecc syndromes|
A method includes storing data that is encoded with an error correction code (ecc) in a group of analog memory cells. The memory cells in the group are read using multiple sets of read thresholds.
| Efficient memory architecture for low density parity check decoding|
A low density parity check (ldpc) decoder integrated on a single semiconductor substrate may comprise one or more arrays of first-type memory cells and one or more arrays of second-type memory cells. The ldpc decoder may be configured to store intrinsic messages in the array of first-type cells and to store extrinsic messages in the array of second-type cells.
| Selective activation of programming schemes in analog memory cell arrays|
A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells.
| Variable-resistance material memories and methods|
Variable-resistance memory material cells are contacted by vertical bottom spacer electrodes. Variable-resistance material memory spacer cells are contacted along the edge by electrodes.
| System and method of performing power on reset for memory array circuits|
The disclosure relates to an apparatus for deactivating one or more predecoded address lines of a memory circuit in response to one or more of the predecoded address lines being activated upon powering on of at least a portion of the apparatus. In particular, the apparatus includes a memory device; an address predecoder configured to activate one or more of a plurality of predecoded address lines based on an input address, wherein the plurality of predecoded address lines are coupled to the memory device for accessing one or more memory cells associated with the one or more activated predecoded address lines; and a power-on-reset circuit configured to deactivate one or more of the predecoded address lines in response to the one or more of the predecoded address lines being activated upon powering on the at least portion of the apparatus..
| Multiple read port memory system with a single port memory cell|
An improved multi-port register file system and method of operating. The multi-port register file memory system comprises: n single memory bit cells each storing a data value and having a single bit cell write port and a single read port connecting a respective local bit line, wherein corresponding parallel activated single bit cells output a stored data value in parallel at n read port outputs to a respective local bit line of n local bit lines, each single bit cell accessed in parallel according to a decoded read address signal.
| Memory core and semiconductor memory device including the same|
A semiconductor device may include a first memory cell connected to a bit-line and a first word-line, a second memory cell connected to a complementary bit-line and a second word-line, and an equalizer. The equalizer may be configured to transition a voltage of the bit-line and the complementary bit-line from a first voltage to a second voltage different from the first voltage at a first time period when the bit-line and complementary bit line are floating, and to transition the voltage of at least one of the bit-line and the complementary bit-line from the second voltage to a third voltage at a second time period after the first time period when the bit-line and complementary bit line are floating, the third voltage being different from the first and second voltages..
| Buffering systems for accessing multiple layers of memory in integrated circuits|
Embodiments of the invention relate generally to data storage and computer memory, and more particularly, to systems, integrated circuits and methods for accessing memory in multiple layers of memory implementing, for example, third dimension memory technology. In a specific embodiment, an integrated circuit is configured to implement write buffers to access multiple layers of memory.
| Method of storing data in nonvolatile memory device and method of testing nonvolatile memory device|
A method of storing data in a nonvolatile memory device comprises performing a program operation on target memory cells among multiple memory cells, performing a first verify operation to determine whether the target memory cells are in a program pass state or a program fail state, and as a consequence of determining that the target memory cells are in the program pass state, performing a second verify operation to determine whether the target memory cells exhibit a program error symptom.. .
| Disturb verify for programming memory cells|
Apparatuses and methods for disturb verify for programming operations are described. Programming memory cells can include applying a number of programming pulses to a first memory cell, performing a disturb verify operation on a second memory cell adjacent to the first memory cell, and inhibiting the first memory cell from further programming in response to the second memory cell failing the disturb verify operation.
| Method of operating a split gate flash memory cell with coupling gate|
A method of operating a memory cell that comprises first and second regions spaced apart in a substrate with a channel region therebetween, a floating gate disposed over the channel region and the first region, a control gate disposed over the channel region and laterally adjacent to the floating gate with a portion disposed over the floating gate, and a coupling gate disposed over the first region and laterally adjacent to the floating gate. A method of erasing the memory cell includes applying a positive voltage to the control gate and a negative voltage to the coupling gate.
| Semiconductor device|
A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a mos type first transistor section (3) used for information storage, and a mos type second transistor section (4) which selects the first transistor section.
| Programming technique for reducing program disturb in stacked memory structures|
A programming bias technique is described for programming a stacked memory structure with a plurality of layers of memory cells. The technique includes the controller circuitry responsive to a program instruction to program data in target cells in a stack of cells at a particular multibit address.
| Method and apparatus for program and erase of select gate transistors|
Techniques are provided for programming and erasing of select gate transistors in connection with the programming or erasing of a set of memory cells. In response to a program command to program memory cells, the select gate transistors are read to determine whether their vth is below an acceptable range, in which case the select gate transistors are programmed before the memory cells.
| Nonvolatile memory and manipulating method thereof|
A manipulating method of a nonvolatile memory is provided and comprises following steps. The nonvolatile memory having a plurality of memory cell is provided.
| Memory system and method of operation thereof|
A method of operating a memory system including a non-volatile memory device and a memory controller controlling the non-volatile memory device, includes reading data from a memory cell array in a unit of a page which includes a plurality of sectors; performing error correction decoding on the read data in a unit of a sector of the page; selecting at least one target sector which includes at least one uncorrectable error and selecting at least one pass sector wherein all errors of the pass sector are correctable by the error correction decoding; inhibiting precharging of bit-lines connected to the at least one pass sector while precharging target bit lines connected to the at least one target sector; and performing a read retry operation for data in the at least one target sector.. .
| Selecting memory cells|
A memory device comprises memory cells arranged in rows and columns, and source lines associated with memory sections, each of which includes a plurality of memory cells. Source terminals of transistors included in the memory cells in a first memory section are physically coupled to a first source line that is distinct from other source lines associated with other memory sections on a same row of the memory device as the first memory section.
| Programming multibit memory cells|
A multiple bits per cell memory is operated by applying a one-pass, multiple-level programming, using a single pulse sequence one time (or in one-pass), such as an incremental pulse program sequence, with program verify steps for multiple target program levels, to program multiple bits per cell in a plurality of memory cells. Using these techniques, the number of program pulses required, and the time required for programming the data can be reduced.
| Flash memory, flash memory system and operating method of the same|
A flash memory, a flash memory system, and an operating method thereof. The method of operating a flash memory includes counting the number of memory cells having threshold voltages included in a first adjacent threshold voltage range (defined by a first reference read voltage for distinguishing between initially separated adjacently located threshold voltage distributions and a first search read voltage having a first voltage difference from the first reference read voltage), and a second adjacent threshold voltage range (defined by the first reference read voltage and a second search read voltage having a second voltage difference from the first reference read voltage), and setting a first optimal read voltage based on the difference between the first and second counted numbers of the memory cells..
| Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution|
A system and methods to find the threshold voltage distribution across a set of nonvolatile memory cells, such that embodiments may incorporate this distribution information into calculations that may change the read compare voltages used to read the memory cells, while ensuring adequate separation in read voltage between different data states at which the memory cells may be read.. .
| Ten-transistor dual-port sram with shared bit-line architecture|
A 10-transistor dual-port sram with shared bit-line architecture includes a first memory cell and a second memory cell. The first memory cell has a first storage unit, a first switch set, and a second switch set.
| Memory cell and memory device having the same|
A memory cell includes a metal oxide semiconductor (mos) capacitor including a gate coupled to a storage node and an electrode coupled to a synchronization control line. The mos capacitor adds a coupling voltage to the gate based on a change in voltage on the synchronization control line.
| Non-volatile storage system using opposite polarity programming signals for mim memory cell|
A reversible resistance-switching metal-insulator-metal (mim) stack is provided which can be set to a low resistance state with a first polarity signal and reset to a higher resistance state with a second polarity signal. The first polarity signal is opposite in polarity than the second polarity signal.
| Nonvolatile memory device using variable resistive element and memory system having the same|
A nonvolatile memory device, which has an improved read reliability through a refresh operation, and a memory system, are provided. The nonvolatile memory device includes a resistive memory cell, a reference resistor corresponding to the resistive memory cell, a reference sense amplifier electrically connected to the reference resistor and configured to change a transition time of an output value of the reference resistor, and a refresh request signal generator configured to output the refresh request signal for the resistive memory cell when the transition time of an output value of the reference resistor is in a preset refresh requiring period..
| Integrated circuit 3d phase change memory array and manufacturing method|
A 3d phase change memory device can store multiple bits per cell represented by a plurality of non-overlapping ranges of resistance all of which are established by different resistance ranges corresponding to respective amorphous phase thickness of the phase change memory material. An array of access devices can underlie a plurality of conductive layers, separated from each other and from the array of access devices by insulating layers.
| Three-dimensional semiconductor devices and methods of fabricating the same|
According to example embodiments of inventive concepts, a three-dimensional semiconductor device may include: a memory cell array including memory cells that may be arranged three-dimensionally, the memory cell array including a left side opposite a right side, and a top side opposite a bottom side in a plan view; at least one word line decoder adjacent to at least one of the left and right sides of the memory cell array; a page buffer adjacent to the bottom side of the memory cell array; and a string selection line decoder adjacent to one of the top and bottom sides of the memory cell array.. .
| Content addressable memory device having electrically floating body transistor|
A content addressable memory cell includes a first floating body transistor and a second floating body transistor. The first floating body transistor and the second floating body transistor are electrically connected in series through a common node.
| Reducing the number of sequential operations in an application to be performed on a shared memory cell|
Methods and apparatuses to reduce the number of sequential operations such as atomic operations in an application to be performed on a shared memory cell may be provided. A translation unit can detect in the application multiple atomic operations to be performed on the same memory and replaces the multiple atomic operations with an equivalent single atomic operation.
| Resistive memory element sensing using averaging|
A system for determining the logic state of a resistive memory cell element, for example an mram resistive cell element. The system includes a controlled voltage supply, an electronic charge reservoir, a current source, and a pulse counter.
| Semiconductor integrated circuit device and a method of manufacturing the same|
Semiconductor device including a memory cell featuring a first gate insulating film over a semiconductor substrate, a control gate electrode over the first gate insulating film, a second gate insulating film over the substrate and a side wall of the control gate electrode, a memory gate electrode over the second gate insulating film arranged adjacent with the control gate electrode through the second gate insulating film, first and second semiconductor regions in the substrate positioned on a control gate electrode side and a memory gate side, respectively, the second gate insulating film featuring a first film over the substrate, a charge storage film over the first film and a third film over the second film, the first film having a first portion between the substrate and memory gate electrode and a thickness greater than that of a second portion between the control gate electrode and the memory gate electrode.. .
| Nonvolatile semiconductor storage device and method of manufacturing the same|
A nonvolatile semiconductor storage device includes a substrate; an isolation film extending in a first direction and dividing the substrate into element regions; a cell string including memory cells in the element regions; a cell unit including the cell string and a select transistor on first directional ends of the cell string; diffusion layers formed in a portion of the element region first directionally beside the select gate electrode, the diffusion layers being adjacent to one another in a second direction intersecting with the first direction; and contacts extending through an interlayer insulating film and contacting the diffusion layers. An upper surface of the isolation film located between the diffusion layers is lower than an upper surface of the substrate.
|Memory cell operation|
Methods, devices, and systems associated with memory cell operation are described. One or more methods of operating a memory cell include charging a capacitor coupled to the memory cell to a particular voltage level and programming the memory cell from a first state to a second state by controlling discharge of the capacitor through a resistive switching element of the memory cell..
|Differential sense amplifier for solid-state memories|
Described embodiments provide a memory having at least one sense amplifier with inputs coupled to at least one pair of bit lines. One of the pair of bit lines is precharged to a power supply voltage and a second one of the pair is precharged to ground.
|Defective memory column replacement with load isolation|
Exemplary embodiments of the present invention disclose a method and system for substituting a group of memory cells for a defective group of memory cells in a memory. In a step, an exemplary embodiment replaces a signal path to a group of defective memory cells with a signal path to a redundant group of memory cells.
|Nonvolatile memory with split substrate select gates and heirarchical bitline configuration|
Generally, the present disclosure provides a non-volatile memory device having a hierarchical bitline structure for preventing erase voltages applied to one group of memory cells of the memory array from leaking to other groups in which erasure is not required. Local bitlines are coupled to the memory cells of each group of memory cells.
|Reduced diffusion in metal electrode for two-terminal memory|
Providing for two-terminal memory that mitigates diffusion of external material therein is described herein. In some embodiments, a two-terminal memory cell can comprise an electrode layer.
|Resistive random access memory cells having variable switching characteristics|
Provided are resistive random access memory (reram) cells forming arrays and methods of operating such cells and arrays. The reram cells of the same array may have the same structure, such as have the same bottom electrodes, top electrodes, and resistive switching layers.
|Resistive random access memory cell having three or more resistive states|
Provided are resistive random access memory (reram) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such reram cells. Such reram cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kohm) in one state and very resistive (e.g., about 1 mohm) in another state.
|Semiconductor device and method for manufacturing same|
In a region just below an access gate electrode in an sram memory cell, a second halo region is formed adjacent to a source-drain region and a first halo region is formed adjacent to a first source-drain region. In a region just below a drive gate electrode, a third halo region is formed adjacent to the third source-drain region and a fourth halo region is formed adjacent to a fourth source-drain region.
|Semiconductor memory device|
A semiconductor memory device has a memory cell array having memory cells, each including first and second conduction type transistors, a peripheral circuit having the first and second conduction type transistors, a first conduction type memory cell array well region within the memory cell array region, a second conduction type memory cell array well region within the first conduction type memory cell array well region, a first conduction type peripheral circuit well region within the peripheral circuit region, a second conduction type peripheral circuit well region within the first conduction type peripheral circuit well region, and a second conduction type isolation region between the first conduction type memory cell array well region and the first conduction type peripheral circuit well region. At least a portion of first conduction type transistors of first conduction type transistors of the peripheral circuit is formed in the second conduction type isolation region..
|Semiconductor memory device|
A semiconductor memory device has a memory cell array with memory cells, each including first and second conduction type transistors, column-side peripheral circuits disposed with the same row-direction interval as the memory cells, a first conduction type well region formed within the memory cell array, a second conduction type well region formed within the first conduction type well region and is disposed separately in the row direction, a second conduction type well contact region disposed extending in the row direction among the memory cells, a first conduction type well contact region disposed extending in the column direction among the memory cells, a column-side peripheral contact region, a first conduction type back gate voltage line connecting to the first conduction type well region; and a second conduction type back gate voltage line connecting to the second conduction type well.. .
Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode.
|Memory devices and systems configured to adjust a size of an ecc coverage area|
Memory devices and systems having an array of memory cells arranged in a plurality of sectors and a plurality of ecc coverage areas, and control circuitry configured to adjust a size of one or more of the ecc coverage areas.. .
|Methods, devices, and systems for data sensing|
The present disclosure includes methods and devices for data sensing. One such method includes performing a number of successive sense operations on a number of memory cells using a number of different sensing voltages, determining a quantity of the number memory cells that change states between consecutive sense operations of the number of successive sense operations, and determining, based at least partially on the determined quantity of the number of memory cells that change states between consecutive sense operations, whether to output hard data corresponding to one of the number of successive sense operations..
|Addressing, command protocol, and electrical interface for non-volatile memories utilized in recording usage counts|
A memory module, including a plurality of memory cells and a plurality of signal lines for communicating with a processing device. The memory module is configured such that following reception of a command and upon encountering a first condition while processing the command, the memory module limits a voltage on a first signal line of the plurality of signal lines to be no more than an intermediate voltage greater than voltage levels corresponding to a binary zero state and less than voltage levels corresponding to a binary one state for a period of time for indicating an occurrence of the first condition..
|Semiconductor memory device and operating method for the same|
Provided is a semiconductor memory device that may efficiently map an internal address used inside the semiconductor memory device in response to an external address that is applied from the outside of the semiconductor memory device. The semiconductor memory device may include a memory cell array configured to include a first main cell array, a first spare cell array, a second main cell array, and a second spare cell array each of which has internal cells that are selected in response to an internal address, and an address mapping unit configured to map external address as the internal address when the external address designates the first main and spare cell arrays, and to operate calculation with a given value and the external address and to map the calculation result value as the internal address when the external address designates the second main and spare cell arrays..
|Memory device and memory system having the same|
A memory device includes a memory cell array, a multi-purpose register (mpr) and a control unit. The memory cell array includes a plurality of memory blocks.
|Solid state storage element and method|
A method and system for storing and retrieving data using flash memory devices. One example system includes an apparatus within a flash memory configuration.
|Method of programming data into nonvolatile memory and method of reading data from nonvolatile memory|
Disclosed is a method of programming data into a nonvolatile memory that includes a plurality of memory cells connected with a word line, each memory cell storing first to mth bits of a plurality of bits, the plurality of bits forming first to mth pages. The method includes generating first to mth metadata based on first to mth page data received; rearranging the first to mth metadata to generate first to mth rearranged metadata; and programming the first to mth rearranged metadata and the first to mth page data into the first to mth pages, respectively..
|Memory modules and memory systems|
A memory module includes a plurality of memory devices and a buffer chip. The buffer chip manages the memory devices.
|Multi-layer memory system having multiple partitions in a layer|
A multi-layer memory and method for operation is disclosed. The memory includes multiple layers, where each layer includes flash memory cells having a greater bit per cell capacity than then prior layer and each layer may include a plurality of partitions having blocks exclusively associated with a particular data type.
|Method and system for managing background operations in a multi-layer memory|
A multi-layer memory and method for performing background maintenance operations are disclosed. The memory includes a plurality of flash memory die having multiple layers, where each layer is made up of flash memory cells having a greater bit per cell storage capacity than then prior layer and each layer may have a plurality of partitions for different data types.