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Level Shift Circuit

Level Shift Circuit-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Half bridge power conversion circuits using gan devices
Navitas Semiconductor, Inc.
April 12, 2018 - N°20180102661

Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device. Both the high side and the low side devices may have one or more ...
Semiconductor device and electronic device
Semiconductor Energy Laboratory Co., Ltd.
March 29, 2018 - N°20180091121

An object is to provide a level shift circuit that operates stably. A semiconductor device includes a level shift circuit including first to fourth transistors and a buffer circuit. One of a source and a drain (s/d) of the first transistor is connected to one of a source and a drain of the second transistor. The other of the ...
Battery control circuit
Mitsumi Electric Co., Ltd.
March 15, 2018 - N°20180076638

A battery control circuit that is used for a battery protecting apparatus configured to protect a secondary battery in which cells are connected in series includes: a level shift circuit configured to shift respective levels of cell voltages of the cells to generate level shift voltages; a maximum voltage output circuit including differential amplifier circuits for the respective level shift ...
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Semiconductor device
Fuji Electric Co., Ltd.
March 08, 2018 - N°20180069076

An hvjt is includes a parasitic diode formed by pn junction between an n−-type diffusion region and a second p−-type separation region surrounding a periphery thereof. The n−-type diffusion region is arranged between an n-type diffusion region that is a high potential side region and an n-type diffusion region that is a low potential ...
Differential level shift circuit
Fairchild Semiconductor Corporation
March 01, 2018 - N°20180062653

In a general aspect, a circuit can include a comparison stage including a plurality of transistors and a current mirror stage including a current mirror. The comparison stage can be configured to produce a cancelling signal before a main signal is produced by the current mirror stage.
Imaging device, endoscope, and endoscope system
Olympus Corporation
February 08, 2018 - N°20180035868

In an imaging device, a pixel signal processing circuit outputs an imaging signal based on a pixel signal. A level shift circuit shifts a first level of the imaging signal in a direction in which the first level is away from a second level of a reference signal or shifts the second level in a direction in which the second ...
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Voltage level shifting method
November 02, 2017 - N°20170316752

A level shift circuit includes first and second nmos transistors that are coupled between a first supply terminal, and first and second output nodes, respectively, and have respective control terminals receiving input signals of a low amplitude, third and fourth pmos transistors which are coupled between a second supply terminal, and the first and second output nodes outputting signals of ...
Level shift circuit
Sii Semiconductor Corporation
September 28, 2017 - N°20170279450

Provided is a level shift circuit capable of avoiding breakdown due to level shift operation. The level shift circuit includes: a floating power supply having one end connected to an output terminal; a circuit configured to receive a voltage of the floating power supply, a voltage of a low level power supply and first and second pulse signals from a ...
Semiconductor device
Renesas Electronics Corporation
September 28, 2017 - N°20170279438

When a signal of high amplitude is outputted, a drain-to-source voltage exceeding a withstand voltage may be applied. The semiconductor device according to the present invention includes a level shift circuit that outputs a high amplitude signal from the input of a low amplitude logical signal. The level shift circuit includes a series coupling circuit, a first gate control circuit ...
Semiconductor device and manufacturing method of the same
Sony Corporation
September 21, 2017 - N°20170271333

A semiconductor device includes a buffer layer formed with a semiconductor adapted to produce piezoelectric polarization, and a channel layer stacked on the buffer layer, wherein a two-dimensional hole gas, generated in the channel layer by piezoelectric polarization of the buffer layer, is used as a carrier of the channel layer. On a complementary semiconductor device, the semiconductor device described ...
Circuit and method of a level shift network with increased flexibility
Dialog Semiconductor (uk) Limited
August 31, 2017 - N°20170250688

A circuit and method for a level shift circuit with increased flexibility is described. The level shifting circuit includes an nmos pair, a pmos pair cross-coupled to the nmos pair, an auxiliary transient response network parallel to the pmos pair configured to provide a parallel current path, and a delay network configured to provide a delay to the auxiliary transient ...
Level shift circuit, integrated circuit, and power semiconductor module
Mitsubishi Electric Corporation
August 17, 2017 - N°20170237436

A primary circuit outputs, in response to an input signal, a first signal with a first reference potential. A level shift main circuit converts the reference potential of the first signal received from the primary circuit to a second reference potential to output a second signal with the second reference potential. A secondary circuit generates an output signal with the ...
Driving circuit
Fuji Electric Co., Ltd.
August 17, 2017 - N°20170237422

Voltage surge is prevented when the output from a driver of a driving circuit performs a hard shutdown. In this manner, the elements in the driving circuit are prevented from being damaged by the voltage surge. A driving circuit includes a level shift circuit configured to convert an input signal from a preceding-stage circuit into an output signal having a ...
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Level Shift Circuit Patent Applications
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Driving circuit
Fuji Electric Co., Ltd.
July 20, 2017 - N°20170207785

A malfunction is prevented in a driving circuit. A driving circuit in which each of the set side level shift circuit and the reset side level shift circuit has an input transistor, a serial transistor unit which includes a first mos transistor and a second mos transistor which are connected in series, the first mos transistors complementarily operate to each ...
Semiconductor device
Fuji Electric Co., Ltd.
June 15, 2017 - N°20170170647

A first sense resistor is connected between a fourth terminal of a power source potential of a high-potential region and a first terminal of a ground potential. A second sense resistor is connected between a third terminal of a reference potential of the high-potential region and the first terminal. A comparator is disposed in a low-potential region and uses the ...
Half bridge driver circuits
Navitas Semiconductor, Inc.
June 08, 2017 - N°20170163258

Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side gan device communicates through one or more level shift circuits with a high side gan device. Both the high side and the low side devices may have one or more ...
Integrated level shifter
Navitas Semiconductor, Inc.
June 01, 2017 - N°20170155391

Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device. Both the high side and the low side devices may have one or more ...
Level shift circuit and display driver
Lapis Semiconductor Co., Ltd.
June 01, 2017 - N°20170154568

A level shift circuit configured to generate an output signal having higher amplitude than that of an input signal. The level shift circuit includes serially-connected first and second level shift circuit for two-step amplitude increase of the input signal. The first level shift circuit includes first to fourth transistors, each of which has a control terminal and first and second ...
Semiconductor device
Semiconductor Energy Laboratory Co., Ltd.
April 20, 2017 - N°20170110585

A semiconductor device or the like capable of preventing malfunction of a driver circuit is provided. In a driver circuit for driving a power device used for current supply, a transistor including an oxide semiconductor is used as a transistor in a circuit (specifically, for example, a level shift circuit) requiring a high withstand voltage. In addition, a transistor (for ...
Level shift circuit, semiconductor device, and battery supervisory apparatus
Kabushiki Kaisha Toshiba
April 13, 2017 - N°20170104489

According to one embodiment, a level shift circuit includes a first transistor, a second transistor, third transistor, fourth transistor, fifth transistor, sixth transistor, seventh transistor and eighth transistor. The level shift circuit also includes a first capacitance element, a second capacitance element, third capacitance element and fourth capacitance element. The first through eighth transistors have a first conductivity type. The ...
Semiconductor device, power control device and electronic system
Renesas Electronics Corporation
April 13, 2017 - N°20170104474

A driver integrated circuit includes a bootstrap circuit (bsc) configured to output a boot power supply voltage (vb) based on a first power supply voltage, the boot power supply voltage being higher than the first power supply voltage; a level shift circuit (lsc) configured to output an output pulse signal based on an input pulse signal and the boot power ...
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