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Level Shift Circuit

Level Shift Circuit-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Systems and methods for a dual function inrush limiting circuit
The Boeing Company
April 19, 2018 - N°20180109177

Systems and methods are provided for a dual function inrush limiting circuit (ilc). The systems and methods may include a level shift circuit (lsc).
Display device configured to operate display drive and touch sensing in time sharing manner and ...
Synaptics Incorporated
April 19, 2018 - N°20180107309

The semiconductor device is intended for connection with an in-cell type display touch panel having a plurality of common electrodes, a reference voltage for display is applied to the common electrodes in a display drive period, and the common electrodes serve as sensor electrodes in a touch detection period. The semiconductor device includes a dc level shift circuit operable to ...
Half bridge power conversion circuits using gan devices
Navitas Semiconductor, Inc.
April 12, 2018 - N°20180102661

Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device.
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Battery control circuit
Mitsumi Electric Co., Ltd.
March 15, 2018 - N°20180076638

A battery control circuit that is used for a battery protecting apparatus configured to protect a secondary battery in which cells are connected in series includes: a level shift circuit configured to shift respective levels of cell voltages of the cells to generate level shift voltages; a maximum voltage output circuit including differential amplifier circuits for the respective level shift ...
Level shift circuit and semiconductor device
March 08, 2018 - N°20180069537

A level shift circuit includes amplitude amplifying circuits ampt1, ampb1, and a sublevel shift circuit slsc1. The amplitude amplifying circuits ampt1, ampb1 are supplied with a reference power supply potential gnd and an external power supply potential vdd2 and, in response to an input signal (int, inb) of an internal power supply voltage amplitude (vdd1 (<vdd2) amplitude), output ...
Semiconductor device
Fuji Electric Co., Ltd.
March 08, 2018 - N°20180069076

An hvjt is includes a parasitic diode formed by pn junction between an n−-type diffusion region and a second p−-type separation region surrounding a periphery thereof. The n−-type diffusion region is arranged between an n-type diffusion region that is a high potential side region and an n-type diffusion region that is a low potential ...
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Level Shift Circuit Patent Applications
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Imaging device, endoscope, and endoscope system
Olympus Corporation
February 08, 2018 - N°20180035868

In an imaging device, a pixel signal processing circuit outputs an imaging signal based on a pixel signal. A level shift circuit shifts a first level of the imaging signal in a direction in which the first level is away from a second level of a reference signal or shifts the second level in a direction in which the second ...
Display device and data driver
Au Optronics Corporation
January 25, 2018 - N°20180025696

A data driver for a display device comprises a first boost circuit, a first gate clock generation circuit, a first level shift circuit, and a data drive circuit. The first boost circuit is used to receive a supply voltage value and generate at least one preset voltage value.
Voltage level shifting method
November 02, 2017 - N°20170316752

A level shift circuit includes first and second nmos transistors that are coupled between a first supply terminal, and first and second output nodes, respectively, and have respective control terminals receiving input signals of a low amplitude, third and fourth pmos transistors which are coupled between a second supply terminal, and the first and second output nodes outputting signals of ...
Level shift circuit
Sii Semiconductor Corporation
September 28, 2017 - N°20170279450

Provided is a level shift circuit capable of avoiding breakdown due to level shift operation. The level shift circuit includes: a floating power supply having one end connected to an output terminal; a circuit configured to receive a voltage of the floating power supply, a voltage of a low level power supply and first and second pulse signals from a ...
Semiconductor device
Renesas Electronics Corporation
September 28, 2017 - N°20170279438

When a signal of high amplitude is outputted, a drain-to-source voltage exceeding a withstand voltage may be applied. The semiconductor device according to the present invention includes a level shift circuit that outputs a high amplitude signal from the input of a low amplitude logical signal.
Semiconductor device and manufacturing method of the same
Sony Corporation
September 21, 2017 - N°20170271333

A semiconductor device includes a buffer layer formed with a semiconductor adapted to produce piezoelectric polarization, and a channel layer stacked on the buffer layer, wherein a two-dimensional hole gas, generated in the channel layer by piezoelectric polarization of the buffer layer, is used as a carrier of the channel layer. On a complementary semiconductor device, the semiconductor device described ...
Circuit and method of a level shift network with increased flexibility
Dialog Semiconductor (uk) Limited
August 31, 2017 - N°20170250688

A circuit and method for a level shift circuit with increased flexibility is described. The level shifting circuit includes an nmos pair, a pmos pair cross-coupled to the nmos pair, an auxiliary transient response network parallel to the pmos pair configured to provide a parallel current path, and a delay network configured to provide a delay to the auxiliary transient ...
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Level Shift Circuit Patent Applications
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  • + full patent PDF documents of Level Shift Circuit-related inventions.
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Driving circuit
Fuji Electric Co., Ltd.
August 17, 2017 - N°20170237422

Voltage surge is prevented when the output from a driver of a driving circuit performs a hard shutdown. In this manner, the elements in the driving circuit are prevented from being damaged by the voltage surge.
Io interface level shift circuit, io interface level shift method and storage medium
Sanechips Technology Co., Ltd.
August 03, 2017 - N°20170222650

Provided is an io interface level shift circuit, comprising: an intermediate level generation circuit (11) and a level shift circuit (12). The intermediate level generation circuit is configured to provide an intermediate level vdd_io of an io interface.
Driving circuit
Fuji Electric Co., Ltd.
July 20, 2017 - N°20170207785

A malfunction is prevented in a driving circuit. A driving circuit in which each of the set side level shift circuit and the reset side level shift circuit has an input transistor, a serial transistor unit which includes a first mos transistor and a second mos transistor which are connected in series, the first mos transistors complementarily operate to each ...
Semiconductor device
Fuji Electric Co., Ltd.
June 15, 2017 - N°20170170647

A first sense resistor is connected between a fourth terminal of a power source potential of a high-potential region and a first terminal of a ground potential. A second sense resistor is connected between a third terminal of a reference potential of the high-potential region and the first terminal.
Half bridge driver circuits
Navitas Semiconductor, Inc.
June 08, 2017 - N°20170163258

Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side gan device communicates through one or more level shift circuits with a high side gan device.
Integrated level shifter
Navitas Semiconductor, Inc.
June 01, 2017 - N°20170155391

Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device.
Level shift circuit and display driver
Lapis Semiconductor Co., Ltd.
June 01, 2017 - N°20170154568

A level shift circuit configured to generate an output signal having higher amplitude than that of an input signal. The level shift circuit includes serially-connected first and second level shift circuit for two-step amplitude increase of the input signal.
Semiconductor device
Semiconductor Energy Laboratory Co., Ltd.
April 20, 2017 - N°20170110585

A semiconductor device or the like capable of preventing malfunction of a driver circuit is provided. In a driver circuit for driving a power device used for current supply, a transistor including an oxide semiconductor is used as a transistor in a circuit (specifically, for example, a level shift circuit) requiring a high withstand voltage.
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