Level Shift Circuit

Level Shift Circuit-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).

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Semiconductor device
Semiconductor Energy Laboratory Co., Ltd.
April 20, 2017 - N°20170110585

A semiconductor device or the like capable of preventing malfunction of a driver circuit is provided. In a driver circuit for driving a power device used for current supply, a transistor including an oxide semiconductor is used as a transistor in a circuit (specifically, for example, a level shift circuit) requiring a high withstand voltage. In addition, a transistor (for ...
Level shift circuit, semiconductor device, and battery supervisory apparatus
Kabushiki Kaisha Toshiba
April 13, 2017 - N°20170104489

According to one embodiment, a level shift circuit includes a first transistor, a second transistor, third transistor, fourth transistor, fifth transistor, sixth transistor, seventh transistor and eighth transistor. The level shift circuit also includes a first capacitance element, a second capacitance element, third capacitance element and fourth capacitance element. The first through eighth transistors have a first conductivity type. The ...
Semiconductor device, power control device and electronic system
Renesas Electronics Corporation
April 13, 2017 - N°20170104474

A driver integrated circuit includes a bootstrap circuit (bsc) configured to output a boot power supply voltage (vb) based on a first power supply voltage, the boot power supply voltage being higher than the first power supply voltage; a level shift circuit (lsc) configured to output an output pulse signal based on an input pulse signal and the boot power ...
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Electronic circuit and semiconductor device
Hitachi, Ltd.
February 16, 2017 - N°20170047921

An electronic circuit includes a first level shift circuit, a second level shift circuit, an internal circuit, a high voltage circuit, first and second transistors, and first and second protective circuits. The first and second protective circuits perform control the first and second transistors so as to make them non-conductive when at least one of a plurality of types of ...
Level shift circuit
Fuji Electric Co., Ltd.
January 19, 2017 - N°20170019106

The present invention provides a level-shift circuit that can suppress the malfunction caused by the noise due to the on/off of a level-shift transistor and the dv/dt noise due to external noise. The present invention provides a level-shift circuit for transmitting a signal from a primary potential side to a secondary potential side, comprising: a first serial circuit ...
Level shift circuit
Denso Corporation
January 19, 2017 - N°20170019090

An input part is supplied with a low voltage from a low voltage power supply line. A level shift part and an output part are supplied with a high voltage from a high voltage power supply line. An input terminal is pulled up by a resistor and connected to the level shift part through a buffer circuit and an inverter ...
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Pulsed level shift and inverter circuits for gan devices
Navitas Semiconductor Inc.
November 17, 2016 - N°20160336926

Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
Level shift circuit and level shift method for goa structure liquid crystal panel
Shenzhen China Star Optoelectronics Technology Co. Ltd.
November 17, 2016 - N°20160335968

The present invention provides a level shift circuit and a level shift method for a goa structure liquid crystal panel. The level shift chip (20) comprises a time delay calculation register module (201) and a start signal line (30) and an inter-integrated circuit bus (40) are employed to communicatively couple the sequence controller (10) and the level shift chip (20). The sequence controller (10) performs initialization assignment (...
Amplifying circuit
Tokyo University Of Science Foundation
November 10, 2016 - N°20160329881

An amplifying circuit according to an embodiment includes a sample and hold circuit, an operational amplifier, a feedback capacitance, and a level shift circuit. The sample and hold circuit includes a sampling capacitance to sample an analog input signal in a sampling phase. The operational amplifier amplifies and outputs the analog input signal held by the sampling capacitance in the ...
Level shift circuit and driver circuit
Kabushiki Kaisha Toshiba
August 25, 2016 - N°20160248404

According to one embodiment, a level shift circuit includes first through fourth transistors, a control circuit, and first and second generating circuits. The control circuit outputs a first voltage obtained by level-shifting an input voltage to a first terminal. The first transistor supplies a first electric current to the control circuit for outputting the first voltage to the first terminal. ...
Semiconductor device and power conversion device
Hitachi, Ltd.
June 09, 2016 - N°20160164413

Provided is a semiconductor device which drives a power semiconductor device, in which dead times generated when switch elements of upper and lower arms are turned on and off are minimized, and a loss of a power conversion device is reduced. A semiconductor device used in a power conversion device that includes a first switch element of which the drain ...
Drive circuit for semiconductor element and semiconductor device
Mitsubishi Electric Corporation
April 28, 2016 - N°20160118979

A primary circuit produces a first on-pulse and a first off-pulse synchronized with a rising edge and a falling edge of an input signal, respectively. A level shift circuit produces a second on-pulse and a second off-pulse formed by shifting the voltage level of the first on-pulse the first off-pulse, respectively. A secondary circuit outputs an output pulse rising and ...
Level shift circuit and semiconductor device
Renesas Electronics Corporation
April 07, 2016 - N°20160099715

A level shift circuit includes: a latch circuit (q5, q6, q7, q8) including first (q5, q7) and second (q6, q8) inverter circuits; a first input mos transistor (q1) operating in accordance with an input signal; a second input mos transistor (q2) operating in accordance with an inversion signal of the input signal; and a current-voltage control mos transistor (q9). The ...
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Level shift and inverter circuits for gan devices
Navitas Semiconductor Inc.
March 17, 2016 - N°20160079978

Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device. Both the high side and the low side devices may have one or more ...
Half bridge driver circuits
Navitas Semiconductor Inc.
March 17, 2016 - N°20160079975

Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side gan device communicates through one or more level shift circuits with a high side gan device. Both the high side and the low side devices may have one or more ...
Integrated level shifter
Navitas Semiconductor, Inc.
March 17, 2016 - N°20160079964

Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device. Both the high side and the low side devices may have one or more ...
Integrated bias supply, reference and bias current circuits for gan devices
Navitas Semiconductor Inc.
March 17, 2016 - N°20160079853

Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device. Both the high side and the low side devices may have one or more ...
Half bridge power conversion circuits using gan devices
Navitas Semiconductor Inc.
March 17, 2016 - N°20160079844

Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device. Both the high side and the low side devices may have one or more ...
Bootstrap capacitor charging circuit for gan devices
Navitas Semiconductor Inc.
March 17, 2016 - N°20160079785

Gan-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side gan device communicates through one or more level shift circuits with a high side gan device. Both the high side and the low side devices may have one or more ...
Protection monitoring circuit, battery pack, secondary battery monitoring circuit, and protection circuit
Mitsumi Electric Co., Ltd.
March 17, 2016 - N°20160079746

A protection monitoring circuit includes a protection circuit which detects overcharge, overdischarge, and overcurrent of a secondary battery, and a secondary battery monitoring circuit which monitors a state of the secondary battery and detects a residual quantity of the secondary battery. The protection circuit includes a first communication terminal that is connected to the secondary battery monitoring circuit, a second ...
Gate driving circuit of high-side transistor, switching output circuit, inverter device, and electronic device
Rohm Co., Ltd.
March 03, 2016 - N°20160065205

A gate driving circuit for turning on a high-side transistor when an input set pulse is asserted and turning off the high-side transistor when an input reset pulse is asserted is provided. The gate driving circuit includes first and second inverters to receive the intermediate set pulse from a level shift circuit to generate first and second set pulses; third ...