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Systems and methods for fast kilovolt switching in an x-ray system

Semiconductor device

Date/App# patent app List of recent Leakage Current-related patents
07/24/14
20140207396
 Integrated time dependent dielectric breakdown reliability testing patent thumbnailnew patent Integrated time dependent dielectric breakdown reliability testing
Systems for reliability testing include a picometer configured to measure a leakage current across a device under test (dut); a camera configured to measure optical emissions from the dut based on a timing of the measurement of the leakage current; and a test system configured to apply a stress voltage to the dut and to correlate the leakage current with the optical emissions using a processor to determine a time and location of a defect occurrence within the dut by locating instances of increased noise in the leakage current that correspond in time with instances of increased optical emissions.. .
07/24/14
20140205070
 Systems and methods for fast kilovolt switching in an x-ray system patent thumbnailnew patent Systems and methods for fast kilovolt switching in an x-ray system
Various of the disclosed embodiments contemplate systems and methods in an x-ray imaging system, such as a ct system, facilitating more crisp switching between high and low voltages at an x-ray tube. Certain embodiments circuits which store and discharge energy to improve voltage rise and fall times.
07/24/14
20140204689
 Apparatus and methods of driving signal for reducing the leakage current patent thumbnailnew patent Apparatus and methods of driving signal for reducing the leakage current
Apparatus and methods for driving a signal are disclosed. An example apparatus includes a pre-driver circuit and a driver circuit.
07/24/14
20140203329
 Nitride electronic device and method for fabricating nitride electronic device patent thumbnailnew patent Nitride electronic device and method for fabricating nitride electronic device
Provided is a nitride electronic device having a structure that allows the reduction of leakage by preventing the carrier concentration from increasing in a channel layer. An inclined surface and a primary surface of a semiconductor stack extend along first and second reference planes r1, r2, respectively.
07/24/14
20140203299
 Semiconductor device patent thumbnailnew patent Semiconductor device
The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage vth of 0.3 v to 0.7 v and a leakage current jr of 1×10−9 a/cm2 to 1×10−4 a/cm2 in a rated voltage vr.. .
07/17/14
20140198587
 Pre-charge voltage generation and power saving modes patent thumbnailPre-charge voltage generation and power saving modes
A system includes a voltage generator to produce a pre-charge voltage signal for pre-charging one or more signals in a memory circuit. The one or more signals can be data bus lines used to access memory.
07/17/14
20140198554
 Semiconductor device having features to prevent reverse engineering patent thumbnailSemiconductor device having features to prevent reverse engineering
A rom circuit includes a first n channel transistor having an output and having device geometry and device characteristics adapted to bias the output at a predetermined level when a p channel circuit is connected to the first n channel transistor; a pass transistor connected between the output and a data bus, the pass transistor connected to a word line, the word line adapted to turn on the pass transistor when the word line is asserted; and the p channel circuit connected to the data bus and adapted to provide leakage current to charge a gate in the first n channel transistor when pass transistor is turned on.. .
07/17/14
20140197844
 Active continuous dc power supply insulation malfunction detection circuit patent thumbnailActive continuous dc power supply insulation malfunction detection circuit
An active continuous dc power supply insulation malfunction detection circuit includes a leakage current detection unit, a positive voltage terminal compensation unit and a negative voltage terminal compensation unit respectively at a positive voltage terminal and a negative voltage terminal of the power supply system. The positive and negative voltage terminal compensation units include respectively a one-way discharger and a power source unit that are forward conducted.
07/17/14
20140197806
 Capacitor charging circuit with low sub-threshold transistor leakage current patent thumbnailCapacitor charging circuit with low sub-threshold transistor leakage current
A capacitor charging circuit has input, output and control nodes, first and second series connected primary fets, and first and second leakage current reduction fets. All of the fets have their gates coupled to the control node.
07/17/14
20140197484
 Dual work function recessed access device and methods of forming patent thumbnailDual work function recessed access device and methods of forming
A recessed access device having a gate electrode formed of two or more gate materials having different work functions may reduce the gate-induced drain leakage current losses from the recessed access device. The gate electrode may include a first gate material having a high work function disposed in a bottom portion of the recessed access device and a second gate material having a lower work function disposed over the first gate material and in an upper portion of the recessed access device..
07/10/14
20140192595
Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
A three-dimensional array especially adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate.
07/10/14
20140191791
Adder
A circuit in which a storage function and an arithmetic function are combined is proposed by using a transistor with low off-state current for forming a storage element. When the transistor with low off-state current is used, electric charge can be held, for example, in a node or the like between a source or a drain of the transistor with low off-state current and a gate of another transistor.
07/10/14
20140191251
Silicon carbide semiconductor device and method of manufacturing the same
It is expected that both reduction of the resistance of a source region and reduction of a leakage current in a gate oxide film be achieved in an mosfet in a silicon carbide semiconductor device. A leakage current to occur in a gate oxide film of the mosfet is suppressed by reducing roughness at an interface between a source region and the gate oxide film.
07/03/14
20140189386
Supply-voltage control for device power management
One embodiment provides a method for reducing leakage current in device logic having an operational supply-voltage threshold, a nonzero data-retention supply-voltage threshold, and two or more on-die transistor switches to switchably connect a voltage source to the device logic. After the logic enters an idle period, one or more of the switches are opened to lower a supply voltage of the logic below the operational supply-voltage threshold but above the data-retention supply-voltage threshold.
07/03/14
20140187021
Method of healing defect at junction of semiconductor device using germanium
This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-ge layer on a substrate, performing ion implantation on the p-ge layer to form an n+ ge region or performing in-situ doping on the p-ge layer and then etching to form an n+ ge region or depositing an oxide film on the p-ge layer and performing patterning, etching and in-situ doping to form an n+ ge layer, forming a capping oxide film, performing annealing at 600˜700° c. For 1˜3 hr, and depositing an electrode, and in which annealing enables ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device..
07/03/14
20140187018
Methods for reproducible flash layer deposition
A method for reducing the leakage current in dram metal-insulator-metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in dram metal-insulator-metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer.
07/03/14
20140187016
High work function, manufacturable top electrode
Provided are mim dram capacitors and methods of forming thereof. A mim dram capacitor may include an electrode layer formed from a high work function material (e.g., greater than about 5.0 ev).
07/03/14
20140185369
Sense amplifier scheme for low voltage sram and register files
In at least one embodiment, a sense amplifier circuit includes a bit line, a sense amplifier output, a keeper circuit, and a noise threshold control circuit. The keeper circuit is coupled to the bit line and includes an nmos transistor coupled between a power node and the bit line.
07/03/14
20140185357
Barrier design for steering elements
Steering elements suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. In some embodiments, the steering element can include a first electrode, a second electrode, and a graded dielectric layer sandwiched between the two electrodes.
07/03/14
20140185174
Through silicon via bidirectional repair circuit of semiconductor apparatus
A tsv bidirectional repair circuit of a semiconductor apparatus is provided. The bidirectional repair circuit includes a first and a second bidirectional switches and at least two transmission path modules.
07/03/14
20140185170
Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
Provided are a driver circuit which suppresses damage of a semiconductor element due to esd in a manufacturing process, a method of manufacturing the driver circuit. Further provided are a driver circuit provided with a protection circuit with low leakage current, and a method of manufacturing the driver circuit.
07/03/14
20140184975
Liquid crystal display
A liquid crystal display (lcd) includes thin film transistors (tfts) respectively coupled to different gate lines and to a pixel electrode and a direction control electrode, and to which different gate-off voltages are respectively applied. Alternatively, a reduced gate voltage is applied to the pixel electrode tft according to a coupling capacitance.
07/03/14
20140184322
Through silicon via repair circuit
A through silicon via (tsv) repair circuit is provided. The tsv repair circuit includes at least two transmission control switches and at least two transmission path modules.
07/03/14
20140184278
Driver circuit for driving power transistors
A driver circuit for driving a power transistor includes a converter having a first transistor and a second transistor coupled in series between a supply node and a reference node. The converter is configured to receive a first signal and in response thereto generate a second signal for selectively controlling status of the power transistor.
07/03/14
20140184239
Semiconductor device with fuse sensing circuit
A semiconductor device may include a fuse unit configured to include a fuse and generate an output voltage according to whether the fuse is ruptured, and a fuse sensing circuit configured to sense whether the fuse is ruptured in response to a reference voltage and the output voltages the reference voltage has a voltage level adapted to leakage current of the fuse unit.. .
07/03/14
20140183697
High work function, manufacturable top electrode
Provided are mim dram capacitors and methods of forming thereof. A mim dram capacitor may include an electrode layer formed from a high work function material (e.g., greater than about 5.0 ev).
07/03/14
20140183695
Methods for reproducible flash layer deposition
A method for reducing the leakage current in dram metal-insulator-metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in dram metal-insulator-metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer.
07/03/14
20140183677
Optical semiconductor device
The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity.
07/03/14
20140183545
Polarization effect carrier generating device structures having compensation doping to reduce leakage current
A semiconductor structure having: a first semiconductor layer; and an electric carrier generating layer disposed on the first semiconductor layer to generate electric carriers within the first semiconductor layer by polarization effects, the electric carrier generating layer having a predetermined conduction band and a predetermined valance band, the electric carrier generating layer having a concentration of non-carrier generating contaminants having an energy level, the difference in the energy level of the non-carrier type contaminants and the energy level of either the conduction band or the valence band being greater than 10 kt, where k is boltzmann's constant and t is the temperature of the electric carrier generating semiconductor layer, the electric carrier generating semiconductor layer being doped with a dopant having an energy level, the difference in the energy level of the dopant and the energy level of either the conduction band or the valence band being greater than 10 kt, the dopant having a concentration equal to or greater than the concentration of the non-carrier generating contaminants.. .
07/03/14
20140183451
Field effect transistor with channel core modified to reduce leakage current and method of fabrication
A semiconductor device includes a channel structure formed on a substrate, the channel structure being formed of a semiconductor material. A gate structure covers at least a portion of the surface of the channel structure and is formed of a film of insulation material and a gate electrode.
07/03/14
20140183439
Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. In some embodiments, the selector device can include a first electrode, a tri-layer dielectric layer, and a second electrode.
06/26/14
20140178290
Bismuth iron oxide powder, manufacturing method for the bismuth iron oxide powder, dielectric ceramics, piezoelectric element, liquid discharge head, and ultrasonic motor
Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (a) grains including a bismuth iron oxide having a perovskite-type crystal structure; (b) grains including a bismuth iron oxide having a crystal structure classified to a space group pbam; and (c) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group i23.
06/26/14
20140177374
Driver of semiconductor memory device and driving method thereof
A driver of a semiconductor memory device and driving method thereof is disclosed, which relates to a technology for reducing consumption of a leakage current not required for a driver circuit of a semiconductor memory device. The driver of the semiconductor memory device includes a drive controller configured to selectively provide a first voltage and a second voltage, that have different levels in response to a power-down signal, to a first node; an input driver configured to selectively output a voltage received from the first node in response to a decoding signal; and an output driver configured to be driven in response to an output voltage of the input driver..
06/26/14
20140177111
Safe quick disconnect leakage protector
The present disclosure provides a safe quick disconnect leakage protector, including a power supply circuit, a sampling circuit, a couple of single-pole single-throws, an on and off control circuit, and a testing circuit. The sampling circuit collects the leakage current signal between the live wire and the neutral wire and outputting the leakage current signal; the main control circuit receives the leakage current signal outputted from the sampling circuit, amplifies the leakage current signal, and outputs a grounding failure control signal when the leakage current reaches the predetermined value; the on and off control circuit receives the grounding failure control signal outputted from the main control circuit and controls the single-pole single-throw switches to disconnect the load from the external power supply according to the grounding failure control signal, thereby protecting the load and improves the safety of the leakage protection of an electrical appliance..
06/26/14
20140176336
System, method, and apparatus for remotely monitoring surge arrester conditions
A system and method for real-time remotely (i.e., at least several miles away) monitoring mov surge arresters conditions is provided along with a method and circuitry for sensing the total leakage current of a surge arrester in a power grid. Leakage current circuitry may include a mov arrester leakage current sensing block having shunt circuitry formed using a biasing resistor, one or more opto-couplers that isolate the radio module system from the mov arrester stem line and monitors the total leakage current and other states of the primary stage, and a mini zov that acts as a surge protection device.
06/26/14
20140175447
Display apparatus, method of driving a display, and electronic device
In a display apparatus including a switching transistor, a correction voltage for eliminating an effect of a variation in a characteristic of a driving transistor is stored in a storage capacitor. The switching transistor is disposed between one current terminal of the driving transistor and a light emitting element.
06/19/14
20140170833
Methods to improve leakage of high k materials
A method for reducing the leakage current in dram metal-insulator-metal capacitors includes forming a capacitor stack including an oxygen donor dopant incorporated within the dielectric layer. The oxygen donor dopants may be incorporated within the dielectric layer during the formation of the dielectric layer.
06/19/14
20140169074
Memory elements with stacked pull-up devices
Integrated circuits with memory cells are provided. A memory cell may include first and second cross-coupled inverting circuits configured to store a single data bit.
06/19/14
20140167997
String dac leakage current cancellation
Embodiments of the present invention may provide a multi-string dac with leakage current cancellation. A leakage cancellation circuit may be coupled to output node(s) of the—multi-string dac.
06/19/14
20140167275
Embedded package and method of manufacturing the same
When connections between the semiconductor chip and the package substrate are performed in different directions, there is a reduction in overall interconnection area, connection reliability is improved, leakage currents are reduced, and higher device yields can be realized.. .
06/19/14
20140167221
Methods to improve leakage of high k materials
A method for reducing the leakage current in dram metal-insulator-metal capacitors includes forming a capacitor stack including an oxygen donor layer inserted between the dielectric layer and at least one of the two electrode layers. In some embodiments, the dielectric layer may be doped with an oxygen donor dopant.
06/19/14
20140167067
Nitride semiconductor light-emitting element having superior leakage current blocking effect and method for manufacturing same
Disclosed are a nitride semiconductor light-emitting element and a method for manufacturing the same. The nitride semiconductor light-emitting element according to the present invention comprises: a current blocking part disposed between a substrate and an n-type nitride layer; an activation layer disposed on the top surface of the n-type nitride layer; and a p-type nitride layer disposed on the top surface of the activation layer, wherein the current blocking part is an alxga(1-x)n layer, and the al content x times layer thickness (μm) is in the range of 0.01-0.06.
06/19/14
20140166891
He-3 detector guard band
A neutron detector for detecting neutrons includes an exterior shell bounding and sealing an interior volume. The exterior shell serves as a cathode.
06/19/14
20140166850
Electronic device with display and low-noise ambient light sensor
An electronic device may be provided that has a display. The display may produce stray light when producing images for a user.
06/12/14
20140162423
Semiconductor device comprising string structures formed on active region
A semiconductor device having a string gate structure and a method of manufacturing the same suppress leakage current. The semiconductor device includes a selection gate and a memory gate.
06/12/14
20140161478
Constant current-type high-voltage power supply apparatus and method of controlling power output from the same
A constant current-type high-voltage power supply apparatus which is used in an image forming apparatus includes a leakage current detection unit that detects a leakage current leaked from at least one output terminal of the constant current-type high-voltage power supply apparatus and outputs the detected leakage current, a direct current voltage output unit that outputs different direct current (dc) voltages according to whether the leakage current detected by the leakage current detection unit is input, and a power control unit that controls power supply to the constant current-type high-voltage power supply apparatus according to the output dc voltage.. .
06/12/14
20140160531
Information processing apparatus, control method therefor, and computer-readable storage medium
There is provided a mechanism of preferentially using a memory layer which suffers a small influence of heat of an soc die, based on the positional relationship between the soc die and the memory layer, and decreasing the refresh frequency of the dram and a leakage current. To accomplish this, an information processing apparatus allocates, in order to execute an accepted job, a memory area for executing the job preferentially from a memory physically farthest from the soc die among a plurality of memories, and then executes the job..
06/12/14
20140159806
Semiconductor device and body bias method thereof
Exemplary embodiments disclose a semiconductor device which includes a function block including a plurality of transistors; a temperature detector configured to detect a driving temperature of the function block in real time; and an adaptive body bias generator configured to provide a body bias voltage to adaptively adjust leakage currents of the transistors according to the detected driving temperature, wherein the adaptive body bias generator is further configured to generate a body bias voltage corresponding to a predetermined minimum leakage current according to the driving temperature.. .
06/12/14
20140159205
Low off-state leakage current field effect transistors
A method is presented to decrease the off-state leakage current of the field effect transistors (fets). The presented method comprises of the placement of dopants underneath or anywhere adjacent to the channel which causes an increase in the band barrier at the source edge of the semiconductor of gate region at the off state, providing for less leakage current.
06/12/14
20140159192
Semiconductor device
In a semiconductor device including a low lifetime region of a depth within a range on both sides sandwiching a p-n junction of a p-type semiconductor region bottom portion, the low lifetime region includes a central region that has a portion coinciding with the semiconductor region as seen from one main surface side and is selectively formed as far as the position of a contact end portion of a region of the coinciding portion with which the semiconductor region and a metal electrode are in contact, a peripheral region wherein the central region extends as far as the position of an outer peripheral end of the semiconductor region, and an expanded end portion region wherein the peripheral region extends as far as an outer peripheral end of the innermost of guard rings. Because of this, it is possible to reduce leakage current while maintaining high reverse recovery current resistance..
06/05/14
20140153343
Low voltage sensing scheme having reduced active power down standby current
A low voltage sensing scheme reduces active power down standby leakage current in a memory device. A clamping device or diode is used between a psense amplifier control line (e.g.
05/29/14
20140146598
Reduced leakage memory cells
Methods and structures are described for reducing leakage currents in semiconductor memory storage cells. Vertically oriented nanorods may be used in the channel region of an access transistor.
05/29/14
20140145753
Through silicon via repair circuit of semiconductor apparatus
A through silicon via (tsv) repair circuit of a semiconductor apparatus is provided. The tsv repair circuit includes a first chip, at least one second chip, at least two tsvs, at least two data path circuits, and an output logic circuit.
05/22/14
20140139955
Leakage protection plug
The present disclosure provides a leakage protection plug comprising a plug main body having one end connected to a load and the other end connected to an outer power supply through two inserting pieces. A transformer, a trip mechanism, and a pcb control board are arranged inside the plug main body.
05/22/14
20140138705
Super surge diodes
The present disclosure relates to a semiconductor device having a schottky contact that provides both super surge capability and low reverse-bias leakage current. In one preferred embodiment, the semiconductor device is a schottky diode and even more preferably a silicon carbide (sic) schottky diode.
05/15/14
20140133249
Apparatuses, integrated circuits, and methods for measuring leakage current
Methods, apparatuses, and integrated circuits for measuring leakage current are disclosed. In one such example method, a word line is charged to a first voltage, and a measurement node is charged to a second voltage, the second voltage being less than the first voltage.
05/15/14
20140132278
Hybrid/electrical vehicle hv ac system leakage and ground fault detection
Apparatus and methods for detection of a ground fault on a dc side as well as on an ac side of an inverter are presented. A detection means can receive forward and reverse current and provide an induced current based on the difference between them.
05/15/14
20140131769
Silicon-compatible compound junctionless field effect transistor
The present invention provides a silicon-compatible compound junctionless field effect transistor enabled to be compatible to a bulk silicon substrate for substituting an expensive soi substrate, to form a blocking semiconductor layer between a silicon substrate and an active layer by a semiconductor material having a specific difference of energy bandgap from that of the active layer to substitute a prior buried oxide for blocking a leakage current at an off-operation time and to form the active layer by a semiconductor layer having electron or hole mobility higher than that of silicon, and to operate perfectly as a junctionless device though the dopant concentration of the active layer is much lower than the prior junctionless device.. .
05/15/14
20140131738
Semiconductor device
A semiconductor device capable of decreasing a reverse leakage current and a forward voltage is provided. In the semiconductor device, an anode electrode undergoes schottky junction by being connected to a surface of an sic epitaxial layer that has the surface, a back surface, and trapezoidal trenches formed on the side of the surface each having side walls and a bottom wall.
05/15/14
20140131658
Led that has bounding silicon-doped regions on either side of a strain release layer
A strain release layer adjoining the active layer in a blue led is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded on the top by a second relatively-highly silicon-doped region. The second relatively-highly silicon-doped region is a sublayer of the active layer of the led.
05/08/14
20140126245
Converting leakage current to dc output
A power source capable of supplying power to operate electronics of a system is disclosed. In one example, the power source takes advantage of an electrical potential difference between primary and secondary grounds.
05/08/14
20140123750
Method and system for monitoring power transmission line of power grid
A system for monitoring a power transmission line of a power grid, including a first comprehensive sensor (402, 502) disposed at the intermediate position of a power transmission line between two towers including an altimeter, a first acceleration sensor, a temperature and humidity sensor and a rainfall sensor; a second comprehensive sensor (404, 504) disposed at the cable connector of the power transmission line including a leakage current sensor, a tension sensor and a wind speed and direction sensor; and a second acceleration sensor (406, 506) disposed at the intermediate position of the power transmission line between the cable connector of the power transmission line and the first comprehensive sensor (402, 502). A method for monitoring a power transmission line of a power grid, including a step of monitoring the sag condition, wind yaw angle, motion and position tracking, flutter conditions, breeze vibration level, fatigue life and icing situation of a power transmission line.
05/01/14
20140123097
Compact model for device/circuit/chip leakage current (iddq) calculation including process induced uplift factors
A system, method and computer program product for implementing a quiescent current leakage specific model into semiconductor device design and circuit design flows. The leakage model covers all device geometries with wide temperature and voltage ranges and, without the need for stacking factor calculations nor spread sheet based iddq calculations.
05/01/14
20140117995
Methods and apparatus for testing an electronic trip device
An electronic trip device is described that includes a test current generator and a leakage current detection circuit. The test current generator is coupled to a conductor and configured to provide a test current having a magnitude to the conductor in response to a selection to test the electronic trip device.
05/01/14
20140117406
Reverse blocking mos semiconductor device and manufacturing method thereof
A reverse blocking igbt is disclosed in which a lifetime control region formed by helium ion irradiation is selectively provided in a region within a range approximately corresponding to the planar pattern of a p-type base region in the direction along the principal surface of a silicon semiconductor substrate of n-type and within a range from the upward vicinity to the downward vicinity of the p-n junction on the bottom of the p-type base region in the direction of the depth of the silicon semiconductor substrate. This can provide a reverse blocking mos semiconductor device capable of further decreasing a reverse leakage current less than the current in a previous device while making the influence on an on-state current small..
04/24/14
20140110765
Field effect transistor having phase transition material incorporated into one or more components for reduced leakage current
Disclosed is a metal oxide semiconductor field effect transistor (mosfet) having phase transition material incorporated into one or more components and an associated method. The mosfet can comprise an asymmetric gate electrode having a phase transition material section (e.g., a chromium or titanium-doped vanadium dioxide (vo2) section) above the drain-side of the channel region.
04/24/14
20140110696
Photodiode device containing a capacitor for controlling dark current or leakage current
An organic photodiode, including a first electrode forming an anode, an active layer, a second electrode, and at least one third electrode, forming a capacitance with another electrode, to trap at least part of dark current or leakage current.. .
04/24/14
20140110492
Electrostatic liquid spray nozzle having an internal dielectric shroud
An electrostatic sprayer for spraying a liquid includes a nozzle formed from a a nozzle body that has an inlet for receiving a liquid and a liquid tip having an outlet for ejection of the liquid to form a liquid spray. The nozzle also includes an electrode disposed around the outlet of the liquid tip for charging the liquid and a dielectric shroud disposed around at least a portion of the liquid tip to prevent leakage currents from reducing a potential of the electric field between the liquid and the electrode, which would otherwise reduce the effectiveness of the sprayer.
04/17/14
20140104934
Leakage-current abatement circuity for memory arrays
In one memory array embodiment, in order to compensate for bit-line leakage currents by off-state bit-cell access devices, a leakage-current reference circuit tracks access-device leakage current over different process, voltage, and temperature (pvt) conditions to generate a leakage-current reference voltage that drives a different leakage-current abatement device connected to each different bit-line to inject currents into the bit-lines to compensate for the corresponding leakage currents. In one implementation, the leakage-current reference circuit has a device that mimics the leakage of each access device configured in a current mirror that drives the resulting leakage-current reference voltage to the different leakage-current abatement devices..
04/17/14
20140104733
Combination esd protection circuits and methods
Circuits, integrated circuits, apparatuses, and methods, such as those for protecting circuits against electrostatic discharge events are disclosed. In an example method, a thyristor is triggered to conduct current from a signal node to a reference voltage node using leakage currents provided by a transistor formed in a semiconductor doped well shared with the base of the thyristor.
04/17/14
20140103482
Semiconductor device having vertical channels and method of manufacturing the same
A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions.


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Leakage Current topics: Leakage Current, Semiconductor, Semiconductor Device, Volatile Memory, Nonvolatile Memory, Temperature Detector Circuit, Memory Cell, Memory Cells, Interrupted, Implantation, Ion Implant, Data Storage, Arithmetic, Electrostatic Discharge, Crystallin

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