|| List of recent Leakage Current-related patents
| Screening method for electrolytic capacitors|
A method of iteratively screening a sample of electrolytic capacitors having a predetermined rated voltage is provided. The method can include measuring a first leakage current of a first set of capacitors, calculating a first mean leakage current therefrom, and removing capacitors from the first set having a first leakage current equal to or above a first predetermined value, thereby forming a second set of capacitors.
| Nonvolatile semiconductor memory device and manufacturing method thereof|
In a nonvolatile semiconductor memory device, there is provided a technique which promotes microfabrication by reducing a thickness of the device as suppressing an off current of a polysilicon diode which is a selective element. A polysilicon layer to which an impurity is doped at low concentration and which becomes an electric-field relaxation layer of the polysilicon diode which is a selective element of a resistance variable memory is formed so as to be divided into two or more layers such as polysilicon layers.
| Shift register unit, shift register and display apparatus|
A shift register unit, shift register and display apparatus, for addressing the issue that the leakage current of the depletion tft affects the shift register. The shift register unit includes: a first output control module (51); a second output control module (52); a staged output module (53), being connected to a pull-up node (pu), a pull-down node (pd), a carry signal output terminal (ca(n)) and a driving signal output terminal (out(n)) respectively, for maintaining the driving signal at a high level during an evaluation phase and maintaining the same at a low level during a resetting phase and a pre-charging phase as well as during a non-operation phase by outputting the carrying signal and the driving signal in a staged mode; and a pull-up node level maintaining capacitor (c1), with one terminal connected to the first low level output terminal and the other terminal connected to the source of a first thin film transistor (t1) comprised in the first output control module (51), for maintaining the pull-up node (pu) at a high level by the first output control module (51) during the evaluation phase, so that to maintain the driving signal at a high level..
| Junctionless semiconductor device having buried gate, apparatus including the same, and method for manufacturing the semiconductor device|
A junctionless semiconductor device having a buried gate, a module and system each having the same, and a method for forming the semiconductor device are disclosed. A source, a drain, and a body of a semiconductor device having a buried gate are doped with the same type of impurities, so that the junctionless semiconductor device does not include a pn junction between the source and the body or between the body and the drain.
| Power-rail electro-static discharge (esd) clamp circuit|
A power-rail esd clamp circuit with a silicon controlled rectifier and a control module is provided. The silicon controlled rectifier is connected to a high voltage level and a low voltage level for bearing a current flow.
| Double through silicon via structure|
This invention discloses a double through silicon via (tsv) structure, including a first die unit, a first signal path, a second signal path, a receiving unit and a second die unit. The first and the second signal paths respectively include a driving unit and a tsv unit.
| Semiconductor device|
A semiconductor device includes an active region in which current flows when the semiconductor device is in an on state and a breakdown voltage structure portion which surrounds the active region. In the active region, a mos gate structure includes, a p well region, an n+ source region, a gate electrode, and a source electrode is provided on the front surface of a semiconductor substrate.
| Wide gap semiconductor device and method for manufacturing the same|
A wide gap semiconductor device has a substrate and a schottky electrode. The substrate is made of a wide gap semiconductor material and has a first conductivity type.
| Gan dual field plate device with single field plate metal|
A low leakage current transistor (2) is provided which includes a gan-containing substrate (11-14) covered by a passivation surface layer (17) in which a t-gate electrode with sidewall extensions (20) is formed and coated with a multi-level passivation layer (30-32) which includes an intermediate etch stop layer (31) which is used to define a continuous multi-region field plate (33) having multiple distances between the bottom surface of the field plate 33 and the semiconductor substrate in the gate-drain region of the transistor.. .
| Logic circuit and semiconductor device|
To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 a or less per micrometer in channel width.
|Device and method for controlling supply voltage/frequency of process variation|
A device capable of controlling a supply voltage and a supply frequency using information of a manufacturing process variation includes a data storage device storing data indicating performance of the device, a decoder decoding the data stored in the data storage device and outputting decoded data, and a frequency control block outputting a frequency controlled clock signal in response to the decoded data output from the decoder. The device further includes a voltage control block outputting a level controlled supply voltage in response to the decoded data.
|Solid electrolytic capacitor with high temperature leakage stability|
A solid electrolytic capacitor and method for forming a solid electrolytic capacitor with high temperature leakage stability is described. The solid electrolytic capacitor has improved leakage current and is especially well suited for high temperature environments such as down-hole applications..
|Leakage current detection circuit, semiconductor apparatus, led illumination apparatus, and vehicle|
A leakage current detection circuit detects a switch current flowing in a switch which is targeted for leakage monitoring, and generates a detection signal to prohibit operation of a control target circuit which is targeted for control when the switch current does not reach a predetermined threshold value.. .
|Gallium nitride (gan) device with leakage current-based over-voltage protection|
A gallium nitride (gan) device with leakage current-based over-voltage protection is disclosed. The gan device includes a drain and a source disposed on a semiconductor substrate.
|Access device, fabrication method thereof, and semiconductor memory device having the same|
An access device having a reduced height and capable of suppressing leakage current, a method of fabricating the same, and a semiconductor memory device including the same, are provided. The access device may include a stacked structure including a first-type semiconductor layer having a first dopant, a second-type semiconductor layer having a second dopant, and a third-type semiconductor layer.
|Fluid warmer and method of operating a fluid warmer|
A fluid warmer (10) for temperature control of a medical fluid (14) guided in a fluid tube (12) and a method for operation thereof have a sensor (38), which determines a leakage current (40) via a functional grounding conductor (fe). Two supply connection conductors (22a; 22b) for a resistance heating element (18) as well as the functional grounding conductor (fe) are each equipped with a switch (30a; 30b; 30c) which can be controlled by a control device (32).
|Rectifier of alternating-current generator for vehicle|
In a rectifier device (2) for full-wave rectifying an output of a vehicle alternating-current generator (1), a schottky barrier diode having a characteristic whose forward voltage drop with respect to a forward current is small and whose reverse leakage current is small, is used as a rectifier semiconductor element (201),(202) constituting the rectifier device (2).. .
|Optimized flip-flop device with standard and high threshold voltage mos devices|
A flip-flop operating with standard threshold voltage mos devices as compared with high threshold voltage mos devices may have improved speed performance, but greater leakage current. Likewise, a flip-flop operating with high threshold voltage mos devices may reduce the leakage current and have better power efficiency, but decreased speed and performance.
|Metal-insulator-metal capacitor and method of fabricating|
Methods and apparatus are disclosed for manufacturing metal-insulator-metal (mim) capacitors. The mim capacitors may comprise an electrode, which may be a top or bottom electrode, which has a bottle neck.
|Contacts for semiconductor devices|
A memory device includes a number of memory cells and a dielectric layer formed over the memory cells. The memory device also includes contacts formed in the dielectric layer and spacers formed adjacent the side surfaces of the contacts.
|Semiconductor device, hemt device, and method of manufacturing semiconductor device|
Provided is a semiconductor device in which a reverse leakage current is suppressed and the mobility of a two-dimensional electron gas is high. A semiconductor device includes: an epitaxial substrate in which a group of group-iii nitride layers are laminated on a base substrate such that a (0001) crystal plane is substantially in parallel with a substrate surface; and a schottky electrode.
|Pixel and organic light emitting display device having the same|
A pixel of an organic light emitting display device includes a transistor, an organic light emitting diode, and a common line. The organic light emitting diode includes a first common layer, an organic light emitting layer disposed on the first common layer, and a second common layer.
|Medical, topper, pet wireless, and automated manufacturing of distributed thermoelectric heating and cooling|
A thermoelectric device comprising an elongated panel, formed of a thermally insulating material, and having a plurality of thermoelectric elements comprising compacted conductors inside the insulating material and expanded conductors outside the insulating material is combined with other layers for leakage current interception, bodily fluid absorption, and pillars that preserve pressure re-distribution. The thermoelectric device may be integrated into a variety of surfaces or enclosures needing heating or cooling and manufactured using pre-existing automated equipment..
|Non-volatile resistive-switching memories|
Non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandgap greater than 4 electron volts (ev), has a set voltage for a set operation of at least one volt per one hundred angstroms of a thickness of the metal oxide, and has a leakage current density less than 40 amps per square centimeter (a/cm2) measured at 0.5 volts (v) per twenty angstroms of the thickness of the metal oxide..
|Testing retention mode of an sram array|
An embodiment of the invention discloses a method for testing the retention mode of an array of sram cells. A data pattern is written to the array.
|Resistive switching for non volatile memory device using an integrated breakdown element|
A method of suppressing propagation of leakage current in an array of switching devices. The method includes providing a dielectric breakdown element integrally and serially connected to a switching element within each of the switching device.
|Display apparatus, method of driving a display, and electronic device|
In a display apparatus including a switching transistor, a correction voltage for eliminating an effect of a variation in a characteristic of a driving transistor is stored in a storage capacitor. The switching transistor is disposed between one current terminal of the driving transistor and a light emitting element.
|Biomedical implant with a monolithic timing control based rectifier for multivoltage for biomedical applications|
A biomedical implant is provided for simultaneously generating multiple voltages for digital and analog circuits. Two ac voltages induced from an external single ac source located externally to the biomedical implant are used as input to a multi-voltage rectifier.
|Semiconductor device and method for fabricating the same|
A semiconductor device comprises: a semiconductor substrate including an active region defined as a device isolation film; a bit line hole disposed over the top portion of the semiconductor substrate; an oxide film disposed at sidewalls of the bit line hole; and a bit line conductive layer buried in the bit line hole including the oxide film. A bit line spacer is formed with an oxide film, thereby reducing a parasitic capacitance.
|Manufacturing method of tunnel oxide of nor flash memory|
A manufacturing method of tunnel oxide of nor flash memory controls the temperature and thickness of tunnel oxide in a gate structure to prevent a channel region to change its doping concentration and range due to a high-temperature manufacturing process, so as to overcome the leakage current and improve the reliability of storing data.. .
|Adaptive gate drive circuit with temperatuare compensation|
An adaptive gate drive circuit that can generate a gate bias voltage with temperature compensation for a mosfet is disclosed. The adaptive gate drive circuit may generate the gate bias voltage with variable drive capability to combat higher gate leakage current of the mosfet at higher temperature.
|Low supply voltage logic circuit|
A low supply voltage logic circuit includes a first current source operable to generate a first current dependent on a first control signal and to generate a first leakage current. A second current source is operable to generate a second current dependent on a second control signal and to generate a second leakage current.
|Reconstituted wafer package with high voltage discrete active dice and integrated field plate for high temperature leakage current stability|
A reconstituted wafer level package for a versatile high-voltage capable component is disclosed. The reconstituted wafer package includes a dice substantially encapsulated by a mold material except for a first face.
|Multi-layer piezoelectric element, and piezoelectric actuator, injection device, and fuel injection system provided with same|
There are provided a multi-layer piezoelectric element which is capable of suppression of occurrence of an imperfect area, suffers from no development of leakage current even with moisture intrusion, has long-term freedom from variations in displacement and can achieve stable driving, as well as to provide a piezoelectric actuator, an injection device, and a fuel injection system provided with the multi-layer piezoelectric element. A multi-layer piezoelectric element includes a stacked body in which piezoelectric layers and internal electrodes acting as positive and negative internal electrodes are laminated; an inorganic coating attached to a side surface of the stacked body where ends of both the positive internal electrodes and the negative internal electrodes are exposed; and metal particles composed predominantly of a metal element contained in the internal electrodes, the metal particles dispersed in the inorganic coating..
|Thermal management of tightly integrated semiconductor device, system and/or package|
Some implementations provide a semiconductor package that includes a first die and a second die adjacent to the first die. The second die is capable of heating the first die.
It is an object to provide a semiconductor device in which power consumption can be reduced. It is another object to provide a highly reliable semiconductor device using a programming cell, such as a programmable logic device (pld).
|Subsea deployed apparatus and method|
An apparatus includes a voltage source, voltage measurement means and a processing means, and connects to a line to apply and monitor a voltage between the line and earth. The processing means controls the voltage source to transmit and receive communications from the line, via the voltage measurement means.
|Thyristor-based, dual-polarity blocking photo-conductive semiconductor switch (pcss) for short pulse switching and methods|
A system and method utilizing thyristor-based photo-conductive semiconductor switches (pcss) for short pulse switching in high power microwave and/or broadband electromagnetic pulse generation is disclosed. The pcss consists of thyristor-type npnp structure having multiple emitter regions enclosed by the base region and multiple emitter shorts to divert leakage currents for voltage holding.
|Method of manufacturing field effect type compound semiconductor device|
Disclosed is a method of manufacturing a field effect type compound semiconductor device in which leakage current of a device is decreased and breakdown voltage is enhanced. The method of manufacturing a field effect type compound semiconductor device includes: stacking an active layer and an ohmic layer on a substrate and forming a first oxide layer on the ohmic layer; forming a mesa region in predetermined regions of the first oxide layer, the ohmic layer, and the active layer; planarizing the mesa region after forming a nitride layer by evaporating a nitride on the mesa region; forming an ohmic electrode on the first oxide layer; forming a minute gate resist pattern after forming a second oxide layer on a semiconductor substrate in which the ohmic electrode is formed and forming a minute gate pattern having a under-cut shaped profile by dry-etching the first oxide layer, the nitride layer, and the second oxide layer; forming a gate recess region by forming a head pattern of a gamma gate electrode on the semiconductor substrate; and forming the gamma gate electrode by evaporating refractory metal on the semiconductor substrate in which the gate recess region is formed..
|Liquid crystal display device and method for driving the same|
A liquid crystal display device whose power consumption is reduced while image quality is prevented from being degraded is provided. Further, a method for driving a liquid crystal display device whose power consumption is reduced while image quality is prevented from being degraded is provided.
|Measurement circuit for leakage current of capacitor|
A measurement circuit includes an instruction input unit, a charging circuit to charge a capacitor, a charging and discharging circuit to control the capacitor to leakage discharge, a control circuit, a first amplifying circuit, and a display unit. The control circuit receives a measurement instruction through the instruction input unit to control the charging circuit to charge the capacitor, and receives a stop charging signal from the charging circuit when a voltage of the capacitor reaches a saturation voltage for controlling the charging circuit to stop charging the capacitor.
|Pixel and organic light emitting display device having the same|
A pixel of an organic light emitting display device includes a transistor configured to output a first source voltage, an organic light emitting diode coupled to the transistor, and a wiring configured to be applied with a reference voltage to ground a leakage current of the transistor. The organic light emitting diode includes a first electrode configured to receive the first source voltage, a first common layer on the first electrode, an organic light emitting layer on the first common layer, and a second electrode on the organic light emitting layer and configured to be applied with a second source voltage different from the first source voltage.
|Array operation using a schottky diode as a non-ohmic selection device|
A two-terminal memory cell including a schottky metal-semiconductor contact as a selection device (sd) allows selection of two-terminal cross-point memory array operating voltages that eliminate “half-select leakage current” problems present when other types of non-ohmic devices are used. The sd structure can comprise a “metal/oxide semiconductor/metal” or a “metal/lightly-doped single layer polycrystalline silicon.” the memory cell can include a two-terminal memory element including at least one conductive oxide layer (e.g., a conductive metal oxide—cmo, such as a perovskite or a conductive binary oxide) and an electronically insulating layer (e.g., yttria-stabilized zirconia—ysz) in contact with the cmo.
|Indirect measurement method and system for monitoring and reporting leakage currents|
A system and method are provided for monitoring and reporting leakage currents caused by a load that is coupled to an ac supply line. A sensor positioned adjacent to an ac supply line senses an amperage difference between currents traveling along the ac supply line.
|Remote control system|
Provided is a remote control system with which leakage current flowing in a switch can be reduced so that power consumption can be reduced. The remote control system includes a portable information terminal, a server, and an electric device.
|Metal/semiconductor compound thin film and a dram storage cell and method of making|
A metal-semiconductor-compound thin film is disclosed, which is formed between a semiconductor layer and a polycrystalline semiconductor layer, the metal-semiconductor-compound thin film having a thickness of about 2˜5 nm, so as to improve a contact between the semiconductor layer and the polycrystalline semiconductor layer. A dram storage cell is also disclosed.
|Trench isolation mos p-n junction diode device and method for manufacturing the same|
A trench isolation metal-oxide-semiconductor (mos) p-n junction diode device and a manufacturing method thereof are provided. The trench isolation mos p-n junction diode device is a combination of an n-channel mos structure and a lateral p-n junction diode, wherein a polysilicon-filled trench oxide layer is buried in the p-type structure to replace the majority of the p-type structure.
|Method of reducing current leakage in a device and a device thereby formed|
A method of reducing current leakage in unused circuits performed during semiconductor fabrication and a semiconductor device or integrated circuit thereby formed. The method involves modifying a characteristic of at least one idle circuit that is unused in a product variant, to inhibit the circuit and reduce current leakage therefrom upon powering as well as during operation.
|Schottky diode with leakage current control structures|
A schottky diode includes a device structure having a central portion and a plurality of fingers. Distal portions of the fingers overlie leakage current control (lcc) regions.
|Schottky-barrier device with locally planarized surface and related semiconductor product|
The present disclosure is related to alleviation of at least some of the above drawbacks of the prior art and to provide an improved alternative to the prior art. Generally, at least some of the embodiments are related to a high voltage power conversion semiconductor device, in particular a sic schottky-barrier power rectifier device, having a surface (of the drift layer) with improved smoothness.
|Esd protection system and x-ray flat panel detector|
An esd protection system includes an esd leakage bus and an esd protection circuit having one of its terminals connected to the esd leakage bus. The esd protection circuit includes at least a pair of amorphous silicon thin film transistors which are connected in a back-to-back manner, and a first shading layer is provided over the channels of the pair of amorphous silicon thin film transistors.
|Integrated time dependent dielectric breakdown reliability testing|
Methods for reliability testing include applying a stress voltage to a device under test (dut); measuring a leakage current across the dut; triggering measurement of optical emissions from the dut based on the timing of the measurement of the leakage current; and correlating measurements of the leakage current with measurements of the optical emissions to determine a time and location of a defect occurrence within the dut by locating instances of increased noise in the leakage current that correspond in time with instances of increased optical emissions.. .
|Manufacturing method of anti punch-through leakage current metal-oxide-semiconductor transistor|
A manufacturing method of an anti punch-through leakage current mos transistor is provided. A high voltage deep first type well region and a first type light doping region are formed in a second type substrate.
|Reverse block-type insulated gate bipolar transistor manufacturing method|
A reverse block-type insulated gate bipolar transistor (igbt) manufacturing method that, when manufacturing a reverse block-type igbt having a separation layer formed along tapered surfaces of a v-shaped groove formed using anisotropic etching, can secure a highly reliable reverse pressure resistance, and suppress a leakage current when reverse biasing. When irradiating with a flash lamp for flash lamp annealing after implantation of ions into a second conductivity type separation layer and second conductivity type collector layer to form the second conductivity type collector layer and second conductivity type separation layer, the strongest portion of radiation energy is focused on a depth position from the upper portion to the central portion of a tapered side edge surface..
|Circuit and method for reducing leakage current|
A circuit includes an input/output (io) circuit, a first node configured to have a first voltage level, a second node configured to have a second voltage level, a third node, and a switching circuit. The io circuit has a set of transistors, and the third node is coupled to bulks of the set of transistors.
|Sige based gate driven pmos trigger circuit|
Some embodiments of the present disclosure relate to a low-power, area efficient esd protection device that provides esd protection to an esd susceptible circuit. The esd protection device has a trigger circuit with a resistor.
|Leakage current collection structure and a radiation detector with the same|
A radiation detector comprises a piece of semiconducting material. On its surface, a number of consecutive electrode strips are configured to assume electric potentials of sequentially increasing absolute value.
|Integrated circuit with automatic total ionizing dose (tid) exposure deactivation|
Integrated circuits and methods for deactivating user circuit operation with one or more wide channel sensing transistors biased to an on condition for exposure to total ionizing dose and then to an off condition for measurement and comparison of a leakage current or threshold voltage parameter to a predetermined reference, and a deactivation circuit selectively disables operation of the user circuit if the sensed parameter is greater than or equal to the reference.. .
|Semiconductor structure and method for manufacutring the same|
A semiconductor structure comprises a substrate, a gate stack, a base area, and a source/drain region, wherein the gate stack is located on the base area, the source/drain region is located in the base area, and the base area is located on the substrate. A supporting isolated structure is provided between the base area and the substrate, wherein part of the supporting structure is connected to the substrate; a cavity is provided between the base area and the substrate, wherein the cavity is composed of the base area, the substrate and the supporting isolated structure.
|Leakage current detection interrupter plug having detachable connect terminals|
An electric plug includes an end block and a power cord. The end block includes a plurality of first connectors and the power cord includes a plurality of second connectors which correspond to the first connectors and detachably connected thereto.
|Electrode foil, current collector, electrode, and electric energy storage element using same|
A cathode foil for a solid electrolytic capacitor is designed to increase capacitance, reduce esr and leakage current, enhance heat resistance, and reduce production costs, while enhancing a power density, realizing rapid charging-discharging, and improving a life property, in an electric energy storage element such as a secondary battery, an electric double layer capacitor and a hybrid capacitor. A cathode foil or a current collector may include a metal foil, a metal layer, a mixed layer containing carbon and a substance composing the metal layer in a mixed state, and a carbon layer consisting substantially of carbon, each formed on the metal foil.
|Leakage current reduction in an integrated circuit|
An integrated circuit is provided with operational mode header transistors which connect a virtual power rail to a vdd power supply. A controller circuit, responsive to a sensed voltage signal from a voltage sensor which reads the virtual rail voltage vvdd, generates a control signal which controls the operational mode transistors.
|Bleeder circuitry for increasing leakage current during hiccup modes of power adapters|
The disclosed embodiments provide a system that facilitates operation of a power adapter in hiccup mode. The system includes a bleeding mechanism that reduces a hiccup time of the hiccup mode by increasing a leakage current of the power adapter.
|Leakage current sense circuit for error detection in an improved capillary electrophoresis-electrospray ionization- mass spectrometry system|
Aspects of the present innovations relate to improved systems that may perform capillary electrophoresis (ce) and ce in conjunction with electrospray ionization (esi) as an input to a mass spectrometry system (ms). Embodiments may use a current sense circuit at a high voltage output from an ms-esi power supply in conjunction with additional elements to identify fault conditions associated with leakage current, to confirm the continuity of ce connections, and to provide improved system protection..
|Transistor of semiconductor device and method for manufacturing the same|
Provided are a transistor of a semiconductor device and a method for manufacturing the same. A gate induced drain leakage (gidl) current is reduced by decreasing a work function at an upper portion of a gate electrode, and a threshold voltage of the transistor is maintained by maintaining a work function at a lower portion of the gate electrode at a high level, thereby reducing a leakage current of the transistor and reducing a read time and a write time of the semiconductor device.
|Memory circuit properly workable under low working voltage|
A memory circuit properly workable under low working voltage includes a plurality of write word lines, a plurality of write bit lines, a plurality of read/write word lines, a plurality of read/write bit lines, a plurality of read/write inverted word lines, a plurality of virtual voltage source circuits, a plurality of virtual ground circuits, and a plurality of asymmetrical ram cells constituting a cell array. The asymmetrical ram cells are formed of seven transistors, five of which are nmos transistors and two of which are pmos transistors.
|Electric leakage detection apparatus|
An electric leakage detection apparatus capable of performing voltage detection on electric equipment and quantitatively displaying a testing result includes a machine body coupled with a voltage detection circuit and a welding machine electric shock prevention detection module. The voltage detection circuit includes a first voltage detection unit intended to detect whether there is electric leakage in an electric equipment, and data of a detection time, an electric leakage current, a voltage, and an electric current are displayed on a data display unit of a display control module, whereby users can directly view the whole related data to ensure safe use of electricity.
To provide a measurement device which allows long-term accurate measurement of voltage without adversely affecting a device under test, by ensuring a predetermined level of resistance to esd and reducing leakage current. A measurement device includes a probe needle for contacting a device under test, a first fet for detecting voltage of the device under test, and a protection circuit for protecting the first fet from static electricity.
|Active leakage consuming module for ldo regulator|
An active leakage consuming module (1001) is to be added to an ldo regulator without modification of the structure of this latter. The module provides a low-power operating mode with reduced current consumption, without impairing an operation of the ldo regulator for higher currents output by said ldo regulator.
|Electrical means to limit current in battery operated patient-connected medical devices|
A system (116, 120) for electrically limiting leakage current in a patient- connected medical device (100). The system (116, 120) includes a first set (116) of one or more switching devices (118) that selectively connect a first power output (124) of a 1-1 battery compartment (110) of the patient-connected medical device (100) with a first power input (126) of electronic components (102) of the patient-connected medical device (100) based on a first polarity of input voltage from the battery compartment (110).
|Multilayer interconnect structure and method for integrated circuits|
A multilayer interconnect structure is formed by, providing a substrate (40) having thereon a first dielectric (50, 27) for supporting a multi-layer interconnection (39) having lower conductor mn (22, 23), upper conductor mn+1 (34, 35), dielectric interlayer (dil) (68) and interconnecting via conductor vn+1/n (36, 36′). The lower conductor mn (22, 23) has a first upper surface (61) located in a recess below a second upper surface (56) of the first dielectric (50, 27).
|Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics|
Provided is a two-step ald deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a high dielectric constant, high density, large bandgap and good thermal stability.
A layer in which the potential level difference normally unrequired for device operation is generated is positively inserted in a device structure. The potential level difference has such a function that even if a semiconductor having a small bandgap is exposed on a mesa side surface, a potential drop amount of the portion is suppressed, and a leakage current inconvenient for device operation can be reduced.