|| List of recent Lattice-related patents
|Transparent polycrystalline ceramic material|
A high performance transparent polycrystalline ceramic material is provided. The transparent polycrystalline ceramic material has a nitrogen-containing isotropic lattice structure and having 80% optical transmission at a wavelength between 3.86 and 4.30 microns through said material at 11 mm of thickness..
|Lattice loss reduction|
Methods for producing systems for the transdermal or permucosal administration of active substances and particularly transdermal therapeutic systems (tts), wherein the active substance depots thereof have a shape that deviates from a rectangular design.. .
|Contact structure of semiconductor device priority claim|
The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an inter-layer dielectric (ild) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a semiconductor layer on the sidewalls and bottom of the opening; a dielectric layer on the semiconductor layer; and a metal layer filling an opening of the dielectric layer..
|Ductile metal alloys, method for making ductile metal alloys|
A ductile alloy is provided comprising molybdenum, chromium and aluminum, wherein the alloy has a ductile to brittle transition temperature of about 300 c after radiation exposure. The invention also provides a method for producing a ductile alloy, the method comprising purifying a base metal defining a lattice; and combining the base metal with chromium and aluminum, whereas the weight percent of chromium is sufficient to provide solute sites within the lattice for point defect annihilation..
|Semiconductor device having strain-relaxed buffer layer and method of manufacturing the same|
A semiconductor device includes a substrate, a strain-relaxed buffer layer on the substrate, at least one well in the strain-relaxed buffer layer, a first channel layer on the strain-relaxed buffer layer, and a second channel layer on the well. A lattice constant of material constituting the first well is less than a lattice constant of the material constituting the strain-relaxed buffer layer, but a lattice constant of material constituting the second well is greater than the lattice constant of the material constituting the strain-relaxed buffer layer..
|High electron mobility bipolar transistor|
The lattice during the process of epitaxy growth is stabilized and it is possible to prevent the dopants, the elements, the vacancies or the defects from diffusing into the neighboring layers, thereby improving the problem of mobility degradation and resistance increase, and sustaining the stability of the manufacturing process.. .
|Semiconductor device and method for manufacturing semiconductor device|
Provided is a lattice-matched hemt device, which is a hemt device having high reverse breakdown voltage while securing two-dimensional electron gas concentration in a practical range. In producing a semiconductor device by forming a channel layer made of gan on a base substrate such as an aln template substrate or a substrate that includes a si single crystal base material as a base, forming a barrier layer made of a group-iii nitride having a composition of inxalygazn (x+y+z=1, 0≦z≦0.3) on the channel layer, and forming a source electrode, a drain electrode, and a gate electrode on the barrier layer, an in mole fraction x, a ga mole fraction z, and a thickness d of the barrier layer satisfy a predetermined range..
|Fin structure of semiconductor device|
The disclosure relates to a fin structure of a semiconductor device. An exemplary fin structure for a semiconductor device comprises a lower portion protruding from a major surface of a substrate, wherein the lower portion comprises a first semiconductor material having a first lattice constant; an upper portion having an interface with the lower portion, wherein the upper portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; a first pair of notches lower than the interface and extending into opposite sides of the lower portion, wherein each first notch have a first width; and a second pair of notches extending into opposite sides of the interface, wherein each second notch have a second width greater than the first width..
|Device including a transistor having a stressed channel region and method for the formation thereof|
A device includes a substrate, a p-channel transistor and an n-channel transistor. The substrate includes a first layer of a first semiconductor material and a second layer of a second semiconductor material.
|Gallium nitride-based light emitting diode|
Disclosed herein is a light emitting diode (led) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented..
|Resistance variable memory cell structures and methods|
Resistance variable memory cell structures and methods are described herein. A number of embodiments include a first resistance variable memory cell comprising a number of resistance variable materials in a super-lattice structure and a second resistance variable memory cell comprising the number of resistance variable materials in a homogeneous structure..
|Elements for joining two workpiece parts by means of laser beam welding|
A device for connecting two workpiece parts by means of laser beam welding. Producing a simply constructed and cost-effectively manufactured device for flat welding workpiece parts, with simultaneous compensation of workpiece tolerances, is achieved by a weld seam pattern with a number of weld seams arranged downstream of an adapted pressure unit of a laser beam source.
|System and method for using adsorbent/absorbent in loading, storing, delivering, and retrieving gases, fluids, and liquids|
A system for containing, loading, storage, delivery and retrieval of gases, fluids, liquids, or mixtures thereof, having a molecular density adsorbent/absorbent material; and one or more lattices each containing the molecular density adsorbent/absorbent material; wherein the one or more lattices is housed within a cartridge wherein the cartridge is placed within a vessel.. .
|Removeable crane boom lifelime system|
A removable crane boom lifeline system comprising a plurality of support elements, each support element including a base post having a top and a bottom securing members for securing to respective top and bottom side longitudinal lattices of the crane boom, and an extendable post longitudinally and slidingly engaged with the base post, the extendable post being provided near a top extremity with a lifeline anchor for attaching a lifeline thereto.. .
|System and method for adapting automatic speech recognition pronunciation by acoustic model restructuring|
Disclosed herein are systems, computer-implemented methods, and computer-readable storage media for recognizing speech by adapting automatic speech recognition pronunciation by acoustic model restructuring. The method identifies an acoustic model and a matching pronouncing dictionary trained on typical native speech in a target dialect.
|High efficiency solar cell using iiib material transition layers|
A solar cell including a base of single crystal silicon with a cubic crystal structure and a single crystal layer of a second material with a higher bandgap than the bandgap of silicon. First and second single crystal transition layers are positioned in overlying relationship with the layers graduated from a cubic crystal structure at one surface to a hexagonal crystal structure at an opposed surface.
|Interparticle spacing material including nucleic acid structures and use thereof|
Provided is an interparticle spacing material comprising a nucleic acid structure which comprises at least one nucleic acid lattice comprising a double helix domain; and at least one metal particle which is in contact with a plane of the nucleic acid lattice, in a direction extending obliquely or perpendicularly away from the plane; wherein the double helix domain comprises a hybridization area in which a single strand is hybridized with another single strand.. .
|Translucent hard thin film|
A translucent hard thin film having high transmissivity and film strength is provided. The translucent hard thin film can be composed of a laminated film formed on a substrate surface, wherein the laminated film has a superlattice structure obtained by stacking a plurality of sio2 layer and sic layers alternately and the entire film thickness is 3000 nm or more.
|Method of marking material and system therefore, and material marked according to same method|
A method of forming one or more protrusions on an outer surface of a polished face of a solid state material, said method including the step of applying focused inert gas ion beam local irradiation towards an outer surface of a polished facet of a solid state material in a way of protruding top surface material; wherein irradiated focused inert gas ions from said focused inert gas ion bean penetrate the outer surface of said polished facet of said solid state material; and wherein irradiated focused inert gas ions cause expansive strain within the solid state crystal lattice of the solid state material below said outer surface at a pressure so as to induce expansion of solid state crystal lattice, and form a protrusion on the outer surface of the polished face of said solid state material.. .
|Two dimensional photonic crystal surface emitting lasers|
The 2d-pc sel includes: a pc layer; and a lattice point for forming resonant-state arranged in the pc layer, and configured so that a light wave at a band edge in photonic band structure in the pc layer is diffracted in a plane of the pc layer, and is diffracted in a direction normal to the surface of the pc layer. The lattice point for forming resonant-state has two types of lattice points including a first lattice point and a second lattice point, and the shapes of the adjacent first lattice point and second lattice point are different from each other..
|12cao-7al2o3 electride hollow cathode|
The use of the electride form of 12cao-7al2o3, or c12a7, as a low work function electron emitter in a hollow cathode discharge apparatus is described. No heater is required to initiate operation of the present cathode, as is necessary for traditional hollow cathode devices.
|Power transmitting apparatus, power receiving apparatus, and non-contact power transmission system|
An active electrode and a passive electrode provided in a power transmitting apparatus 10 are connected to an inductor provided on the secondary side of a transformer generating an ac voltage and are respectively coupled to an active electrode and a passive electrode of a power receiving apparatus through electric fields. A ground electrode of the power transmitting apparatus faces the active electrode and the passive electrode and a ground electrode of the power receiving apparatus faces the active electrode and the passive electrode.
|Epitaxial wafer for heterojunction type field effect transistor|
An epitaxial wafer for a heterojunction type fet includes an aln primary layer, a stepwisely composition-graded buffer layer structure, a superlattice buffer layer structure, a gan channel layer, and a nitride semiconductor electron supply layer, which are sequentially provided on a si substrate, the stepwisely composition-graded buffer layer structure including a plurality of algan buffer layers provided on each other such that an al composition ratio is sequentially reduced, an uppermost layer thereof having a composition of alxga1—xn (0<x), a plurality of sets of an alyga1−yn (y≦1) superlattice constituting layer and an alzga1−zn (0<z<y) superlattice constituting layer being provided on each other alternately starting from one of the alyga1−yn superlattice constituting layer and the alzga1−zn superlattice constituting layer in the superlattice buffer layer structure, the alxga1−xn buffer layer and the alzga1−zn superlattice constituting layer satisfying x−0.05≦z≦x+0.05.. .
|Epitaxial wafer, method for producing the same, photodiode, and optical sensor device|
A method for producing an epitaxial wafer includes a step of growing an epitaxial layer structure on a iii-v semiconductor substrate, the epitaxial layer structure including a iii-v semiconductor multiple-quantum well and a iii-v semiconductor surface layer, wherein the step of growing the epitaxial layer structure on the substrate is performed such that a lattice mismatch Δω of the multiple-quantum well with respect to the substrate satisfies a range of −0.13%≦Δω<0% or 0%<Δω≦+0.13%, the range having a center displaced from zero, and an x-ray rocking curve in a zero-order diffraction peak derived from the multiple-quantum well has a full width at half maximum (fwhm) of 30 seconds or less.. .
A light emitting device disclosed herein comprises a substrate, a buffer stack formed on the substrate, a tunneling junction stack formed on the buffer stack comprising an un-doped layer, a light-emitting stack formed on the tunneling junction stack, and a contact stack formed on the light emitting stack. The structure of the light emitting device disclosed also reduce the energy band bending arisen from the lattice mismatch and improve the epitaxy quality of the stacks..
|Systems and methods for a protective casing|
Systems and methods for a protective casing are provided. In at least one embodiment, a protective casing includes a flexible insulation layer configured to inhibit thermal energy from conducting from an external side of the flexible insulation layer to an internal side of the flexible insulation layer.
|Organic spintronic devices and methods for making the same|
An organic spintronic photovoltaic device having an organic electron active layer functionally associated with a pair of electrodes. The organic electron active layer can include a spin active molecular radical distributed in the active layer which increases spin-lattice relaxation rates within the active layer.
|Systems and methods for voice identification|
Systems and methods are provided for voice identification. For example, audio characteristics are extracted from acquired voice signals; a syllable confusion network is identified based on at least information associated with the audio characteristics; a word lattice is generated based on at least information associated with the syllable confusion network and a predetermined phonetic dictionary; and an optimal character sequence is calculated in the word lattice as an identification result..
|Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same|
A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from x-ray diffraction measurement performed with variation of x-ray penetration depth from a surface of the crystal while x-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of . .
|Two dimensional photonic crystal vertical cavity surface emitting lasers|
The 2d-pc vertical cavity surface emitting laser includes: a pc layer; and a lattice point for forming resonant-state arranged in the photonic crystal layer, and configured so that a light wave in a band edge in photonic band structure in the pc layer is diffracted in a plane of the pc layer, and is diffracted in a surface vertical direction of the pc layer. The perturbation for diffracting the light wave in the surface vertical direction of the pc layer is applied to the lattice point for forming resonant-state.
|Multi-threshold voltage fets|
A multi-threshold voltage (vt) field-effect transistor (fet) formed through strain engineering is provided. An embodiment integrated circuit device includes a first transistor including a first channel region over a first buffer, the first channel region formed from a iii-v semiconductor material and a second transistor including a second channel region over a second buffer, the second channel region formed from the iii-v semiconductor material, the second buffer and the first buffer having a lattice mismatch.
A radiation detector includes two reflecting plate lattices that are combined into a single reflecting plate lattice. The use of such a structure simplifies the manufacturing of a scintillator.
|Multi-junction solar cell, photoelectric conversion device, and compound-semiconductor-layer lamination structure|
A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers.
|Multijunction photovoltaic device having sige(sn) and gaasnsb cells|
A multijunction tandem photovoltaic device is disclosed having a bottom subcell of silicon germanium or silicon germanium tin material and above that a subcell of gallium nitride arsenide antimonide material. The materials are lattice matched to gallium arsenide, which preferably forms the substrate.
A stud support base device to support a stud for a wall of a dwelling may include a front wall, a back wall being opposed to the front wall, a pair of opposing side walls to connect the back wall and the front wall, and a lattice of interconnecting support walls to support the front wall, the back wall and the pair of opposing side walls. The front wall may include an aperture which extends to the support surface for the stud support base device..
|Engine control device|
A plurality of lattice points arranged in a three-dimensional cartesian coordinate system that takes first, second and third operating conditions as axes are associated in a one-to-one relationship with at least some of a plurality of cores arranged in a lattice shape in a multi-core processor, and a calculation program for calculating a control value at the associated lattice points is allocated to the cores. Each core with which a lattice point is associated is configured so that, in a case where an operation space on the three-dimensional cartesian coordinate system to which a current operating point belongs is a space defined by eight adjacent lattice points including a lattice point associated with the relevant core, the relevant core calculates a control value at the lattice point associated therewith by means of the calculation program and sends the control value to an interpolation calculation core, and if the operation space is not defined by the eight adjacent lattice points, the relevant core suspends calculation of the control value.
|Expandable occlusion device and methods|
An occlusion device and method for occluding an undesirable passage through tissue, such as a septal defect, that provides an expandable cylinder or other structure that occludes the passage internally or by covering one or more openings to the passage. The occlusion device includes a wire lattice or mesh that expands from a contracted catheter-deliverable state to an expanded state that occludes the passage.
|Carrier for ethylene oxide catalysts|
A carrier for an ethylene epoxidation catalyst is provided that includes an alumina first component and a mixed metal oxide of alumina second component. The mixed metal oxide of alumina second component comprises a corundum lattice structure having a plurality of o—al—o bonds, wherein an al atom of at least one o—al—o bond of the plurality of o—al—o bonds, but not all of the plurality of o—al—o bonds, is replaced with a divalent or trivalent transition metal selected from the group consisting of scandium (sc), titanium (ti), vanadium (v), chromium (cr), manganese (mn), iron (fe), cobalt (co), nickel (ni) copper (cu), and zinc (zn).
|Defect reduction using aspect ratio trapping|
Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls..
|Method of strain and defect control in thin semiconductor films|
A method of managing strain and preventing defect formation in semiconductor materials is described. In structures featuring two or more semiconductor materials with different lattice constants, buffer layers may be used to form deposition surfaces that result in defect-free semiconductor devices.
|Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells|
A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell, the graded interlayer having a third band gap greater than the second band gap; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; and forming a contact composed of a sequence of layers over the first subcell at a temperature of 280° c. Or less and having a contact resistance of less than 5×10−4 ohms-cm2..
|Light emitting diode (led) component comprising a phosphor with improved excitation properties|
A light emitting diode (led) component comprises an led having a dominant wavelength in a range of from about 425 nm to less than 460 nm and a phosphor in optical communication with the led. The phosphor includes a host lattice comprising yttrium aluminum garnet (yag), and may include an activator comprising ce and a substitutional dopant comprising ga incorporated in the host lattice.
|Integrated multi-color light emitting device made with hybrid crystal structure|
An integrated hybrid crystal light emitting diode (“led”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite iii-nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended iii-v or ii-vi compound semiconductor on the opposite side of c-plane sapphire media.
|Virtual substrates by having thick, highly relaxed metamorphic buffer layer structures by hydride vapor phase epitaxy|
Virtual substrates made by hydride vapor phase epitaxy are provided comprising a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (mbl) structure comprising one or more layers of a semiconductor alloy on the growth substrate. The mbl structure is compositionally graded such that its lattice constant transitions from a lattice constant at the interface with the growth substrate that is substantially the same as the lattice constant of the growth substrate to a lattice constant at a surface opposite the interface that is different from the lattice constant of the growth substrate.
|Low-resistivity p-type gasb quantum wells for low-power electronic devices|
A semiconductor device including a heterostructure having at least one low-resistivity p-type gasb quantum well is provided. The heterostructure includes a layer of inwal1−was on a semi-insulating (100) inp substrate, where the inwal1−was is lattice matched to inp, followed by an alasxsb1−x buffer layer on the inwal1−was layer, an alasxsb1−x spacer layer on the buffer layer, a gasb quantum well layer on the spacer layer, an alasxsb1−x barrier layer on the quantum well layer, an inyal1−ysb layer on the barrier layer, and an inas cap.
|Telescopic boom and crane|
A telescopic boom for a crane has at least two telescopable telescoping sections in the form of lattice pieces, each of which exhibits a hollow structure that has in essence the shape of a box. The bottom chords of adjacent sections have in each instance a pinning structure to provide for pinning to each other during normal crane operations.
|Slide-glide privacy blind barrier system|
A convertible slide-glide panel privacy (or blind barrier section) system is provided for deck railings or fences. The system may consist of identical panel sections.
|Synthesis of olefins from oxygen-free direct conversion of methane and catalysts thereof|
The present invention is related to the preparation of a metal lattice-doping catalyst in an amorphous molten state, and the process of catalyzing methane to make olefins, aromatics, and hydrogen using the catalyst under oxygen-free, continuous flowing conditions. Such a process has little coke deposition and realizes atom-economic conversion.
|Negative-electrode material for rechargeable batteries with nonaqueous electrolyte, and process for producing the same|
There is provided a negative-electrode material for rechargeable batteries with a nonaqueous electrolyte which have a high charge/discharge capacity and excellent rate characteristics. The negative-electrode material for rechargeable batteries with a nonaqueous electrolyte comprises: carbon material having a carbon atom content of not less than 98.0% in terms of mass and a lattice spacing (d002) of not more than 3.370 angstroms in the c-axis direction; and a boron compound represented by general formula hxboy wherein x represents a real number of 0 to 1.0; and y represents a real number of 1.5 to 3.0, wherein the boron compound is bonded to a portion of the carbon atoms of the carbon material..
|Quadrature lattice matching network|
Embodiments include but are not limited to apparatuses and systems including a quadrature lattice matching network including first path having a series inductor and a shunt inductor, and a second path having a series capacitor and a shunt capacitor. Other embodiments may be described and claimed..
|Direct graphene growth on metal oxides by molecular epitaxy|
Direct growth of graphene on co3o4(111) at 1000 k was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic sp2 carbon lineshape, at average carbon coverages from 0.4-3 monolayers.
|Semiconductor device and method of manufacturing the same|
A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate and including aluminum nitride (aln), and a semiconductor device layer disposed on the initial buffer layer and including a semiconductor compound. There is no sin between the initial buffer layer and the silicon substrate, and a silicon lattice of the silicon substrate directly contacts a lattice of the initial buffer layer..
|Low-bandgap, monolithic, multi-bandgap, optoelectronic devices|
Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including pv converters, photodetectors, and led's, have lattice-matched (lm), double-heterostructure (dh), low-bandgap gainas(p) subcells (22, 24) including those that are lattice-mismatched (lmm) to inp, grown on an inp substrate (26) by use of at least one graded lattice constant transition layer (20) of inasp positioned somewhere between the inp substrate (26) and the lmm subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (mims) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments..
|Nitride semiconductor light-emitting device and method of manufacturing the same|
A nitride semiconductor light-emitting device is formed of an n-type nitride semiconductor layer, a trigger layer, a v-pit expanding layer, a light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The light-emitting layer has a v-pit formed therein.
|Diode barrier infrared detector devices and superlattice barrier structures|
Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a barrier layer adjacent to the absorber layer, and a second contact layer adjacent to the barrier layer.
|Optically transparent electrode|
Provided is an optically transparent electrode of which the visibility of the electrode pattern is low. The optically transparent electrode is produced by joining two optically transparent conductive materials each having, on one side of the optically transparent base material, a large lattice 11 formed of a grid-like conductive part and a connector 12 which has at least one connector lattice 16 and which electrically connects adjacent large lattices 11, and is characterized by that the two optically transparent conductive materials are overlapped so that the centers of the connectors 12 thereof approximately coincide, and by that at least one of the two optically transparent conductive materials has a broken lattice 31 where a part of a thin line is broken and electrical conductivity is lost at a position corresponding to the overlapped connectors 12 and/or to a portion surrounded by the large lattice 11 and the connector 12..
|Control of low energy nuclear reaction hydrides, and autonomously controlled heat|
A treatment of a possibly powdered, sintered, or deposited lattice (e.g., nickel) for heat generating applications and a way to control low energy nuclear reactions (“lenr”) hosted in the lattice by controlling hydride formation. The method of control and treatment involves the use of the reaction lattice, enclosed by an inert cover gas such as argon that carries hydrogen as the reactive gas in a non-flammable mixture.