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Lattice patents



      

This page is updated frequently with new Lattice-related patent applications.




Date/App# patent app List of recent Lattice-related patents
06/23/16
20160182006 
 High-selectivity low-loss duplexer patent thumbnailHigh-selectivity low-loss duplexer
A high-selectivity low-loss duplexing system includes a first duplexer having a first port, a second port, a transmit port and a receive port. A second duplexer has a third port, a fourth port, an inverted transmit port and the receive port.

06/23/16
20160181599 
 Lithium secondary battery patent thumbnailLithium secondary battery
Disclosed is a lithium secondary battery, including a cathode, an anode and a non-aqueous electrolyte, wherein the cathode includes a cathode active material containing lithium-metal oxide of which at least one of metals has a concentration gradient region between a core part and a surface part thereof, and the anode includes graphite having an average lattice distance d002 of 3.356 to 3.365 Å, thereby having excellent high-temperature storage and life-span properties.. .

06/23/16
20160181464 
 Method of forming an inverted metamorphic multijunction solar cell with dbr layer adjacent to the top subcell patent thumbnailMethod of forming an inverted metamorphic multijunction solar cell with dbr layer adjacent to the top subcell
A multijunction solar cell comprising an upper first solar subcell having a first band gap; a middle second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap; a graded interlayer adjacent to the second solar subcell; the graded interlayer having a third band gap greater than the second band gap; a third solar subcell adjacent to the interlayer, the third subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; and a distributed bragg reflector (dbr) layer adjacent to the upper first subcell.. .

06/23/16
20160181460 
 Avalance photodiode patent thumbnailAvalance photodiode
An avalanche photodiode includes a p-type contact layer, a light absorption layer, a compositionally-graded symmetrical multiplication layer, and an n-type contact layer. The p-type contact layer is connected to the light absorption layer, the light absorption layer is connected to the compositionally-graded symmetrical multiplication layer, and the compositionally-graded symmetrical multiplication layer is connected to the n-type contact layer.

06/23/16
20160181416 
 Charge-compensation device patent thumbnailCharge-compensation device
A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area, a peripheral area arranged between the active area and the lateral edge, a drift region, first compensation regions forming respective first pn-junctions with the drift region, and second compensation regions extending from the first surface into the drift region and forming respective second pn-junctions with the drift region. The first compensation regions form in the active area a lattice comprising a first base vector having a first length.

06/23/16
20160181017 
 Dielectric film, film capacitor, and electric device patent thumbnailDielectric film, film capacitor, and electric device
There are provided a dielectric film, a film capacitor and an electric device capable of achieving an increase in relative permittivity without causing a decrease in breakdown field strength. A dielectric film includes an organic resin and ceramic particles contained in the organic resin.

06/23/16
20160179947 
 System and  lattice-based search for spoken utterance retrieval patent thumbnailSystem and lattice-based search for spoken utterance retrieval
A system and method are disclosed for retrieving audio segments from a spoken document. The spoken document preferably is one having moderate word error rates such as telephone calls or teleconferences.

06/23/16
20160179221 
 Display panel and display control system patent thumbnailDisplay panel and display control system
A display panel according to the present disclosure is a display panel with which an optical pen can be used. The display panel includes: a position information pattern layer which causes the optical pen to identify a position on the display panel; a color filter layer including a color filter partitioned by a lattice structure; and a non-visible light reflection layer having a shape which diffuses and reflects a part of a non-visible light emitted from the optical pen.

06/23/16
20160178843 
 Terahertz-wave device and terahetz-wave integrated circuits patent thumbnailTerahertz-wave device and terahetz-wave integrated circuits
The thz-wave device comprises: a 2d-pc slab; lattice points periodically arranged in the 2d-pc slab, the lattice points for diffracting the thz waves in pbg frequencies of photonic band structure of the 2d-pc slab in order to prohibit existence in a plane of the 2d-pc; a 2d-pc waveguide disposed in the 2d-pc slab and formed with a line defect of the lattice points; and an rtd device disposed on the 2d-pc waveguide.. .

06/23/16
20160178679 
 Capacitance monitoring using x-ray diffraction patent thumbnailCapacitance monitoring using x-ray diffraction
A method includes measuring a difference between a primary x-ray diffraction peak and a secondary x-ray diffraction peak, the primary x-ray diffraction peak corresponds to an unstrained portion of a semiconductor substrate and the secondary x-ray diffraction peak corresponds to a strained portion of the semiconductor substrate, the difference between the primary x-ray diffraction peak and the secondary x-ray diffraction peak includes a delta shift peak that corresponds to changes in a crystal lattice caused by a stress applied to the strained portion of the semiconductor substrate, the delta shift peak includes variations in a deep trench capacitance.. .

06/23/16
20160176988 

Dna-nanoparticle conjugates


The bio-programmable crystallization of multi-component functional nanoparticle systems is described, as well as methods for such bio-programmable crystallization, and the products resultant from such methods. Specifically, the systems disclosed and taught herein are directed to improved strategies for the dna-mediated self-assembly of multi-component functionalized nanoparticles into three-dimensional order superlattices, wherein the functionalization of the nanoparticles with dna is independent of either the composition of the material, or the shape of the nanoparticles..

06/23/16
20160174650 

Article of footwear with color change portion and changing color


An article with a color change portion and a method of changing color. The article includes at least one color change portion capable of changing colors.

06/16/16
20160172555 

Semiconductor chip that emits polarized radiation


A radiation emitting semiconductor chip is disclosed. Embodiments provide a semiconductor chip that emits radiation includes a semiconductor body having an active zone, which emits unpolarized radiation having a first radiation component of a first polarization and having a second radiation component of a second polarization.
Osram Opto Semiconductors Gmbh


06/16/16
20160172534 

Iii nitride semiconductor epitaxial substrate and iii nitride semiconductor light emitting device, and methods of producing the same


A iii nitride semiconductor epitaxial substrate having more excellent surface flatness is provided, in which the problems of crack formation and the double peaks in the shape of the el spectrum are mitigated by employing appropriate conditions for si doping on an aln layer on a substrate; a iii nitride semiconductor light emitting device; and methods of producing the same. A iii nitride semiconductor epitaxial substrate has a substrate of which at least a surface portion is made of aln, an undoped aln layer formed on the substrate, an si-doped aln buffer layer formed on the undoped aln layer, and a superlattice laminate formed on the si-doped aln buffer layer.
Dowa Electronics Materials Co., Ltd.


06/16/16
20160172530 

Method for producing semiconductor light receiving device


A method for producing a semiconductor light receiving device includes the steps of growing a stacked semiconductor layer including a light-receiving layer having a super-lattice structure, the super-lattice structure including first and second semiconductor layers stacked alternately; forming a mesa structure by etching the stacked semiconductor layer, the mesa structure having a side surface exposed in an atmosphere; forming a deposited layer on the side surface of the mesa structure by supplying a silicon raw material, the deposited layer containing silicon generated from the silicon raw material; and, after the step of forming the deposited layer, forming a passivation film on the side surface of the mesa structure. The first semiconductor layer contains gallium as a constituent element.
Sumitomo Electric Industries, Ltd.


06/16/16
20160172470 

Isolation structure of fin field effect transistor


A representative fin field effect transistor (finfet) includes a substrate having a major surface; a fin structure protruding from the major surface having a lower portion comprising a first semiconductor material having a first lattice constant; an upper portion comprising the first semiconductor material. A bottom portion of the upper portion comprises a dopant with a first peak concentration.
Taiwan Semiconductor Manufacturing Company, Ltd.


06/16/16
20160172459 

Active regions with compatible dielectric layers


A method to form a semiconductor structure with an active region and a compatible dielectric layer is described. In one embodiment, a semiconductor structure has a dielectric layer comprised of an oxide of a first semiconductor material, wherein a second (and compositionally different) semiconductor material is formed between the dielectric layer and the first semiconductor material.

06/16/16
20160172438 

Method of manufacturing semiconductor devices using light ion implantation and semiconductor device


A first doped region is formed in a single crystalline semiconductor substrate. Light ions are implanted through a process surface into the semiconductor substrate to generate crystal lattice vacancies between the first doped region and the process surface, wherein a main beam axis of an implant beam used for implanting the light ions deviates by at most 1.5 degree from a main crystal direction along which channeling of the light ions occurs.
Infineon Technologies Ag


06/16/16
20160172414 

Radiation imaging apparatus, manufacturing the same, and radiation inspection apparatus


A radiation imaging apparatus, comprising a plurality of sensor units each including a plurality of sensors, a support portion having a lattice shape which partitions a region under the plurality of sensor units into a plurality of spaces and configured to support the plurality of sensor units from a side of lower surfaces of the plurality of sensor units, and bonding members respectively arranged in the plurality of spaces and configured to bond the plurality of sensor units and the support portion.. .
Canon Kabushiki Kaisha


06/16/16
20160172411 

Method for producing semiconductor light receiving device and semiconductor light receiving device


A method for producing a semiconductor light receiving device includes the steps of growing a stacked semiconductor layer on a principal surface of a substrate, the stacked semiconductor layer including a light-receiving layer having a super-lattice structure, the super-lattice structure including a first semiconductor layer and a second semiconductor layer that are stacked alternately; forming a mask on the stacked semiconductor layer; forming a mesa structure on the substrate by etching the stacked semiconductor layer using the mask so as to form a substrate product, the mesa structure having a side surface exposed in an atmosphere; forming a fluorinated amorphous layer on the side surface of the mesa structure by exposing the substrate product in fluorine plasma; and after the step of forming the fluorinated amorphous layer, forming a passivation film containing an oxide on the side surface of the mesa structure.. .
Sumitomo Electric Industries, Ltd.


06/16/16
20160172290 

Interposer with lattice construction and embedded conductive metal structures


A lattice structure is formed in a non-silicon interposer substrate to create large cells that are multiples of through hole pitches to act as islands for dielectric fields. Each unit cell is then filled with a dielectric material.
International Business Machines Corporation


06/16/16
20160172288 

Interposer with lattice construction and embedded conductive metal structures


A lattice structure is formed in a non-silicon interposer substrate to create large cells that are multiples of through hole pitches to act as islands for dielectric fields. Each unit cell is then filled with a dielectric material.
International Business Machines Corporation


06/16/16
20160171984 

System and adapting automatic speech recognition pronunciation by acoustic model restructuring


Disclosed herein are systems, computer-implemented methods, and computer-readable storage media for recognizing speech by adapting automatic speech recognition pronunciation by acoustic model restructuring. The method identifies an acoustic model and a matching pronouncing dictionary trained on typical native speech in a target dialect.
At&t Intellectual Property I, Lp


06/16/16
20160171673 

Sub-pixel modification of digital images by locally shifting to an arbitrarily dense supergrid


Methods and systems may provide for receiving an input image having an input pixel density and defining a single filter based on a sub-pixel modification value, wherein the single filter has a working lattice density that is greater than the input pixel density. Additionally, the single filter and the input image may be used to generate an output image.

06/16/16
20160171401 

Layout optimization for interactional objects in a constrained geographical area


The present disclosure describes methods, systems, and computer program products for finding a best location scheme for a set of interactional objects in a constrained geographical area. A geographic region representing a wind farm is partitioned into a plurality of lattices.

06/16/16
20160170099 

Head-up display device


Each of a plurality of optical elements that are arrayed in a lattice pattern in a screen member which diffuses a laser beam incident from a projector to guide the laser beam toward a projection surface has a curved surface on a side thereof, and the curved surface has a common convexly curved shape, and diffuses the laser beam which is emitted from the curved surface toward the projection surface. The respective optical elements include a plurality of reference elements which serve as a reference and a plurality of peripheral elements which are adjacent to the respective reference elements.
Denso Corporation


06/16/16
20160167241 

Intelligent shaving system having sensors


Methods and apparatuses for an intelligent shaving system is disclosed herein. An example intelligent shaving system includes a handle, at least one blade connected to the handle, a microcontroller attached to the handle, a wireless communication unit configured to send and receive data from microcontroller to an external device, a memory configured to store data applicable to the at least one blade, and one or more sensors configured to send sensory data from the one or more sensors to microcontroller.

06/09/16
20160164706 

Pilot symbol patterns for transmit antennas


A method and apparatus for improving channel estimation within an ofdm communication system. Channel estimation in ofdm is usually performed with the aid of pilot symbols.
Apple Inc.


06/09/16
20160163927 

Light emitting device with improved extraction efficiency


In embodiments of the invention, a semiconductor structure comprising a iii-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-iii-nitride material.
asubstrate−alayer


06/09/16
20160163920 

Electronic devices comprising n-type and p-type superlattices


A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed.
The Silanna Group Pty Ltd.


06/09/16
20160163834 

Semiconductor device having fin-type field effect transistor and manufacturing the same


A field effect transistor includes a fin structure, having a sidewall, protruding from a substrate, and a device isolation structure on the substrate, the device isolation structure defining the sidewall of the fin structure, wherein the fin structure includes a buffer semiconductor pattern disposed on the substrate and a channel pattern disposed on the buffer semiconductor pattern, wherein the buffer semiconductor pattern has a lattice constant different from that of the channel pattern, and wherein the device isolation structure includes a gap-fill insulating layer, and includes an oxidation blocking layer pattern disposed between the buffer semiconductor pattern and the gap-fill insulating layer.. .

06/09/16
20160163803 

Nitride semiconductor element and nitride semiconductor wafer


According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer.
Kabushiki Kaisha Toshiba


06/09/16
20160163308 

Word-level correction of speech input


The subject matter of this specification can be implemented in, among other things, a computer-implemented method for correcting words in transcribed text including receiving speech audio data from a microphone. The method further includes sending the speech audio data to a transcription system.
Google Inc.


06/09/16
20160161644 

Solid state illumination device having plasmonic antenna array for anisotropic emission


There is provided an illumination device (100, 150, 200, 300) comprising: a periodic plasmonic antenna array (114), comprising a plurality of individual antenna elements (106) arranged in an antenna array plane, the plasmonic antenna array being configured to support surface lattice resonances at a first wavelength, arising from diffractive coupling of localized surface plasmon resonances in the individual antenna elements; a photon emitter (152) configured to emit photons at the first wavelength, the photon emitter being arranged in close proximity of the plasmonic antenna array such that at least a portion of the emitted photons are emitted by a coupled system comprising said photon emitter and said plasmonic antenna array, wherein the plasmonic antenna array is configured to comprise plasmon resonance modes being out-of plane asymmetric, such that light emitted from the plasmonic antenna array has an anisotropic angle distribution.. .
Koninklijke Philips N.v.


06/09/16
20160159465 

Laminar flow panel


An aerodynamic body operable to both promote laminar flow and satisfy structural requirements is disclosed. A perforated panel skin comprises an inner surface and an outer surface of the aerodynamic body.
The Boeing Company


06/09/16
20160158039 

Medical device for inserting into a hollow organ of the body


The invention relates to a medical device for inserting into a hollow organ of the body. The device has a compressible and expandable lattice structure made of webs, which are integrally connected to each other by web connectors and which bound closed cells of the lattice structure, wherein the web connectors each have a connector axis extending between two cells which, in a longitudinal direction of the lattice structure, are adjacent to each other.
Acandis Gmbh & Co. Kg


06/09/16
20160157908 

Bone screw incorporating a porous surface formed by an additive manufacturing process


The present invention provides a bone screw or bone anchor, such as a threaded pedicle screw or the like, incorporating a porous surface for enhancing bony fixation, ingrowth, and purchase when implanted in bone. Preferably, this porous surface covers at least a portion of the threads of the bone screw or bone anchor.
Renovis Surgical Technologies, Inc.


06/02/16
20160156465 

Attribute based encryption using lattices


A master public key is generated as a first set of lattices based on a set of attributes, along with a random vector. A master secret key is generated as a set of trap door lattices corresponding to the first set of lattices.
Microsoft Technology Licensing, Llc


06/02/16
20160155805 

Secondary use of aspect ratio trapping holes as edram structure


A semiconductor structure is provided according to a method in which an aspect ratio trapping process is employed. The structure includes a semiconductor substrate comprising a first semiconductor material having a first lattice constant.
International Business Machines Corporation


06/02/16
20160155629 

Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations


Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using atomic layer deposition (ald) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate.
Ultratech, Inc.


06/02/16
20160155537 

Submarine cable and multilayer tape for impermeable layer of same


Protrusion portions and recess portions are formed on a metal layer. The protrusion portions are repeatedly formed in a lattice shape at a pitch of p.
Viscas Corporation


06/02/16
20160154530 

Position sensor


There is provided a position sensor configured to prevent a light-receiving element from sensing extraneous light. The position sensor includes: an optical waveguide in a sheet form including an under cladding layer in a sheet form, a plurality of linear cores arranged in a lattice form and formed on a surface of the under cladding layer, and an over cladding layer in a sheet form formed to cover the cores; a light-emitting element connected to one end surface of the cores; and a light-receiving element connected to the other end surface of the cores.
Nitto Denko Corporation


06/02/16
20160153658 

Combustor wall for a gas turbine engine and acoustic dampening


A vascular wall of a combustor that may be for a gas turbine engine includes a first face defining at least in-part a combustion chamber, a second face defining at least in-part a cooling air plenum, and a vascular lattice structure located between the first and second faces for distributing cooling air from the plenum and to the chamber. The vascular lattice structure may be configured to enhance cooling air flow where needed whiling providing structural support.
United Technologies Corporation


06/02/16
20160152314 

Composite structural component


A composite structural component is disclosed. The composite structural component can include a lattice structure, a casing disposed about at least a portion of the lattice structure, and a skin adhered to a surface of the casing.
Raytheon Company


05/26/16
20160149118 

Compound semiconductor device and manufacturing the same


A compound semiconductor device includes: a flexible part; a first nitride semiconductor layer above a surface of the flexible part, the first nitride semiconductor layer including a first polar plane and a second polar plane intersecting the surface; a second nitride semiconductor layer in contact with the first nitride semiconductor layer on the first polar plane, a lattice constant of the second nitride semiconductor layer being different from that of the first nitride semiconductor layer; a third nitride semiconductor layer in contact with the first nitride semiconductor layer on the second polar plane, a lattice constant of the third nitride semiconductor layer being different from that of the first nitride semiconductor layer; a first ohmic electrode above an interface between the first nitride semiconductor layer and the second nitride semiconductor layer; and a second ohmic electrode above an interface between the first nitride semiconductor layer and the third nitride semiconductor layer.. .
Fujitsu Limited


05/26/16
20160149075 

Optoelectronic device


An optoelectronic device comprising a semiconductor structure includes a p-type active region and an n-type active region. The semiconductor structure is comprised solely of one or more superlattices, where each superlattice is comprised of a plurality of unit cells.
The Silanna Group Pty Ltd.


05/26/16
20160149074 

Advanced electronic device structures using semiconductor structures and superlattices


Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed.
The Silanna Group Pty Ltd.


05/26/16
20160149023 

Semiconductor device including a superlattice and replacement metal gate structure and related methods


A semiconductor device may include a substrate having a channel recess therein, a plurality of spaced apart shallow trench isolation (sti) regions in the substrate, and source and drain regions spaced apart in the substrate and between a pair of the sti regions. A superlattice channel may be in the channel recess of the substrate and extend between the source and drain regions, with the superlattice channel including a plurality of stacked group of layers, and each group of layers of the superlattice channel including stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
Mears Technologies, Inc.


05/26/16
20160149005 

Semiconductor device and manufacturing same, crystal, and manufacturing same


A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice..
Flosfia Inc.


05/26/16
20160149000 

Semiconductor wafer and producing semiconductor wafer


A semiconductor wafer includes first and second superlattice layers. The first superlattice layer includes first unit layers each of which includes first and second layers, the second superlattice layer includes second unit layers each of which includes third and fourth layers, the first layer is made of alx1ga1-x1n (0<x1≦1), the second layer is made of aly1ga1-y1n (0≦y1<1, x1>y1), the third layer is made of alx2ga1-x2n (0<x2≦1), the fourth layer is made of aly2ga1-y2n (0≦y2<1, x2>y2), an average lattice constant of the first superlattice layer is different from that of the second superlattice layer, and one or more layers selected from the first and second superlattice layers contain impurity atoms that improve a breakdown voltage and that have a concentration higher than 7×1018 [atoms/cm3]..
Sumitomo Chemical Company, Limited


05/26/16
20160148924 

Compound semiconductor device and manufacturing the same


An electrode (109) insulated from a compound semiconductor layer (102) and being in contact with an electrode (101) and a compound semiconductor layer (103) is provided. A lattice constant of the compound semiconductor layer (103) is smaller than both of a lattice constant of the compound semiconductor layer (102) and a lattice constant of a compound semiconductor layer (104), and a lattice constant of a compound semiconductor layer (107) is smaller than both of the lattice constants of the compound semiconductor layer (102) and the lattice constants of the compound semiconductor layer (104).
Fujitsu Limited


05/26/16
20160148714 

Low ohmic loss radial superlattice conductors


Various examples are provided for low ohmic loss radial superlattice conductors. In one example, among others, a conductor includes a plurality of radially distributed layers that include a non-permalloy core, a permalloy layer disposed on and encircling the non-permalloy core, and a non-permalloy layer disposed on and encircling the permalloy layer.
The University Of Florida Research Foundation, Inc.


05/26/16
20160145850 

Plated tubular lattice structure


A plated tubular lattice structure is described. The plated tubular lattice structure may comprise a backbone structure which may include a plurality of axial posts and a plurality of pyramidal structures extending laterally from the axial posts and connecting the axial posts at nodes.
United Technologies Corporation


05/19/16
20160143133 

Printed wiring board, semiconductor device and printed circuit board


A printed wiring board includes conductive layers laminated with insulator layers interposed. A land group including a plurality of lands arranged with intervals between each other, is formed in a rectangular region on a surface layer, among the plurality of conductive layers, when viewed in a direction perpendicular to the surface layer.
Canon Kabushiki Kaisha


05/19/16
20160141836 

Monolithic nano-cavity light source on lattice mismatched semiconductor substrate


An optoelectronic light emission device is provided that includes a gain region of at least one type iii-v semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type iii-v semiconductor layer has a nanoscale area using nano-cavities.
International Business Machines Corporation


05/19/16
20160141453 

Lattice-matched light emitting element


A light emitting element and its manufacturing method are disclosed. A larger end face of a gallium nitride pyramid contacts with a mounting face of a gallium nitride layer disposed on a substrate, with c-axes of the gallium nitride layer and the gallium nitride pyramid coaxial to each other, and with m-planes of the gallium nitride layer and the gallium nitride pyramid parallel to each other.
National Sun Yat-sen University


05/19/16
20160141448 

Monolithic nano-cavity light source on lattice mismatched semiconductor substrate


An optoelectronic light emission device is provided that includes a gain region of at least one type iii-v semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type iii-v semiconductor layer has a nanoscale area using nano-cavities.
International Business Machines Corporation


05/19/16
20160141413 

Semiconductor devices


Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice constant of the substrate, a first gate electrode on the channel layer, a first source region of a first conductivity type at a first side of the first gate electrode, a first body region of a second conductivity type under the first source region and contacting the first source region, a first drain region of the first conductivity type disposed at a second side of the first gate electrode, a first drift region of the first conductivity type under the first drain region and contacting the first drain region, and a first stud region in the channel layer and the first drift region. The first stud region has an impurity concentration higher than an impurity concentration of the first drift region..

05/19/16
20160141374 

Aspect ratio trapping and lattice engineering for iii/v semiconductors


A method of forming a semiconductor structure. The method may include; forming a hardmask on a strained semiconductor, the strained semiconductor is on a substrate; relaxing edges of the strained semiconductor by forming first trenches through the hardmask and through the strained semiconductor; forming barrier layers in the first trenches; forming a second trench between adjacent barrier layers; and growing a second semiconductor layer on the strained semiconductor having relaxed edges..
International Business Machines Corporation


05/19/16
20160139019 

Method and integrated device for analyzing liquid flow and liquid-solid interface interaction


An integrated circuit (ic) chip with a lab-on-a-chip, a method of manufacturing the lab-on-a-chip and a method of using the lab-on-a-chip for fluid flow analysis in physical systems through combination with computer modeling. The lab-on-a-chip includes cavities in a channel layer and a capping layer, preferably transparent, covering the cavities.
International Business Machines Corporation


05/19/16
20160138369 

Apparatus and cultivating a downhole surface


Methods and apparatus for cultivating a surface of a wall of a subterranean well bore, conduit or cable by scraping and furrowing the surface using a string hoistable shaft carrying a flexible arrangement of a laterally extendable and retractable arcuate engagement linkage dragging a cutter and scraper member, wherein said engagement linkage arcuately engages and aligns the cutter and scraper member during one or more scraping engagements: along said surface and longitudinal to a well axis to form and use said furrow, across said surface and transverse to said well axis using a filament linkage to form and use said furrow, or along and across said surface and longitudinal and transverse to said well axis to form and use a lattice of said furrows, separating a plane of the surface into a plurality of planes that comprise separate surface regions, usable by an ancillary apparatus or a spreadable substance.. .

05/19/16
20160136856 

Method of making a golf ball with lattice reinforced layer


Methods of making a golf ball that includes a lattice reinforced layer, which is a layer made of at least two materials with different properties, includes various injection and compression molding steps. In some embodiments, the lattice reinforced layer is manufactured using a shutoff molding technique so that the entire lattice reinforced layer is molded in the same mold.
Nike, Inc.


05/19/16
20160136633 

Honeycomb formed body extruding die


A die has two surfaces, in a forming material supplying surface which is one surface, a plurality of back holes to introduce a forming material of a honeycomb formed body into the die are formed, and in a honeycomb formed body extruding surface which is the other surface, lattice-shaped slits corresponding to cell partition walls are formed, the back holes communicate with the slits in slit intersecting portions of the slits, polygonal cell blocks defined by the slits include chamfered portions in which parts of corner portions and the like are chamfered at a chamfering angle θ of 1.0 to 8.0° to the extruding direction, from the honeycomb formed body extruding surface toward a slit depth direction, and straight portions which are not chamfered, and a ratio of a length l of the straight portion to a slit depth d is from 20 to 60%.. .
Ngk Insulators, Ltd.


05/12/16
20160134503 

Performance enhancements for finding top traffic patterns


A method for network traffic characterization is provided. Flow data records are acquired associated with a security alert signature.
Arbor Networks, Inc.


05/12/16
20160133825 

Piezoelectric layer, piezoelectric component, piezoelectric actuator, piezoelectric sensor, hard-disk drive and ink jet printer


A piezoelectric layer made of potassium sodium niobate which is a perovskite type compound represented by the formula abo3, wherein, in the raman spectroscopy measurement of the piezoelectric layer which is performed while the piezoelectric layer is rotated in the in-plane direction, the measured intensity of the lattice vibration region of the perovskite type compound in the raman spectrum obtained in polarized raman spectroscopy measurement (yx) has a periodicity of approximately 90°, wherein, the polarized raman spectroscopy measurement (yx) is performed while the piezoelectric layer is rotated in the in-plane direction and raman scattering light is polarized in a direction perpendicular to that of the incident light.. .
Tdk Corporation


05/12/16
20160133787 

Diode-based devices and methods for making the same


In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.. .
Taiwan Semiconductor Manufacturing Company, Ltd.


05/12/16
20160133783 

Group iii nitride semiconductor light-emitting device and production method therefor


To provide a group iii nitride semiconductor light-emitting device production method, which is intended to grow a flat light-emitting layer without reducing the in concentration of the light-emitting layer. The method of the techniques includes an n-side superlattice layer formation step, in which an ingan layer, a gan layer disposed on the ingan layer, and an n-type gan layer disposed on the gan layer are repeatedly formed.
Toyoda Gosei Co., Ltd.


05/12/16
20160133775 

Solar cell stack


A solar cell stack, having a first semiconductor solar cell having a p-n junction made of a first material with a first lattice constant, and a second semiconductor solar cell having a p-n junction made of a second material with a second lattice constant, and the first lattice constant being at least 0.008 Å smaller than the second lattice constant, and a metamorphic buffer, the metamorphic buffer being formed between the first semiconductor solar cell and the second semiconductor solar cell, and the metamorphic buffer including a series of three layers, and the lattice constant increasing in a series in the direction of the semiconductor solar cell, and the lattice constants of the layers of the metamorphic buffer being bigger than the first lattice constant, two layers of the buffer having a doping, and the difference in the dopant concentration between the two layers being greater than 4e17 cm−3.. .
Azur Space Solar Power Gmbh


05/12/16
20160133749 

Semiconductor device having tipless epitaxial source/drain regions


A semiconductor device having tipless epitaxial source/drain regions and a method for its formation are described. In an embodiment, the semiconductor device comprises a gate stack on a substrate.

05/12/16
20160133747 

Semiconductor transistor having a stressed channel


A process is described for manufacturing an improved pmos semiconductor transistor. Recesses are etched into a layer of epitaxial silicon.
Intel Corporation


05/12/16
20160133576 

Ultrathin superlattice of mno/mn/mnn and other metal oxide/metal/metal nitride liners and caps for copper low dielectric constant interconnects


An electrical device comprising including an opening in a low-k dielectric material, and a copper including structure present within the opening for transmitting electrical current. A liner is present between the opening and the copper including structure.
International Business Machines Corporation


05/12/16
20160133462 

System for manufacturing graphene on a substrate


A method and apparatus for manufacturing a lattice structure of a material on a substrate, wherein the process may be performed at atmospheric pressure, may not require a metallic substrate, may be capable of continuously generating the lattice structure as long as desired, may be as thin as a single layer of the lattice material, and may create the lattice structure with any material that is capable of being vaporized to create a stream of ionized particles and then condensed to form the lattice structure.. .

05/12/16
20160133258 

Word-level correction of speech input


The subject matter of this specification can be implemented in, among other things, a computer-implemented method for correcting words in transcribed text including receiving speech audio data from a microphone. The method further includes sending the speech audio data to a transcription system.
Google Inc.




Lattice topics: Semiconductor, Semiconductor Device, Semiconductor Material, Crystallin, Disconnect, Transistors, Replacement Gate, Semiconductor Devices, Dislocations, Dislocation, Image Processing, Coordinates, Surface Plasmon Polariton, Antenna Array

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