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This page is updated frequently with new Lattice-related patent applications. Subscribe to the Lattice RSS feed to automatically get the update: related Lattice RSS feeds. RSS updates for this page: Lattice RSS RSS


Defect-free sige source/drain formation by epitaxy-free process

Taiwan Semiconductor Manufacturing

Defect-free sige source/drain formation by epitaxy-free process

Defect-free sige source/drain formation by epitaxy-free process

J Touch

Electrode structure and capacitance sensor having the same

Date/App# patent app List of recent Lattice-related patents
02/26/15
20150057995
 Data recognition in content patent thumbnailnew patent Data recognition in content
The disclosure relates to recognizing data such as items or entities in content. In some aspects, content may be received and feature information, such as face recognition data and voice recognition data may be generated.
Comcast Cable Communications, Llc
02/26/15
20150056449
 Minimal weight composites using open structure patent thumbnailnew patent Minimal weight composites using open structure
Preforms for open structured (lattice) composite tubular members manufactured from large (i.e. High filament count) prepreg yarns on a conventional maypole braiding machine, and subsequently cured to produce fiber reinforced composites of high strength and light weight..
Auburn University
02/26/15
20150056020
 Structures for offshore installations patent thumbnailnew patent Structures for offshore installations
A structure for mounting offshore installations such as wind turbines or oil and gas platforms. The structure comprises a base, a top piece and a lattice structure connecting the base to the top piece.
Owlc Holdings Ltd.
02/26/15
20150055756
 Method of measuring thickness of fe-zn alloy phase of galvannealed steel sheet and  measuring the same patent thumbnailnew patent Method of measuring thickness of fe-zn alloy phase of galvannealed steel sheet and measuring the same
A method of measuring a thickness of a fe—zn alloy phase included in the fe—zn alloy coating of the galvannealed steel sheet includes: an x-ray irradiation process of irradiating the galvannealed steel sheet with the incident x-rays; and an x-ray detection process of detecting the diffracted x-rays obtained in the x-ray irradiation process, derived from a Γ·Γ1 phase, a δ1 phase, and a ζ phase included in the fe—zn alloy coating with a crystal lattice spacing d of 1.5 Å or higher.. .
Nippon Steel & Sumitomo Metal Corporation
02/26/15
20150055236
 Open architecture structure for trough shaped solar concentrators patent thumbnailnew patent Open architecture structure for trough shaped solar concentrators
The present invention comprises an open architecture lattice geometric structure, aerodynamic provisions to that structure and methods to produce that structure for the manufacture of trough shaped solar concentrators having fresnel reflector elements, such that the wind loading on these trough solar concentrators is substantially reduced compared to traditional trough concentrators with continuous panel structures.. .
02/26/15
20150054529
 Electrode structure and capacitance sensor having the same patent thumbnailnew patent Electrode structure and capacitance sensor having the same
Provided is an electrode structure for use with a capacitive touch panel to enhance capacitance sensing capability thereof the electrode structure includes electrically conductive fine lines each forming fine line portions, sensing portions, and cross portions. The fine line portions, the sensing portions, and the cross portions together form a latticed pattern.
J Touch Corporation
02/26/15
20150054030
 Defect-free sige source/drain formation by epitaxy-free process patent thumbnailnew patent Defect-free sige source/drain formation by epitaxy-free process
Mosfet transistors having localized stressors for improving carrier mobility are provided. Embodiments of the invention comprise a gate electrode formed over a substrate, a carrier channel region in the substrate under the gate electrode, and source/drain regions on either side of the carrier channel region.
Taiwan Semiconductor Manufacturing Company, Ltd.
02/26/15
20150053924
 Spad photodiode of high quantum efficiency patent thumbnailnew patent Spad photodiode of high quantum efficiency
A spad-type photodiode has a semiconductor substrate with a light-receiving surface. A lattice formed of interlaced strips made of a first material covers the light receiving surface.
Commissariat A L'energie Atomique Et Aux Energies Alternatives
02/26/15
20150053261
 Solar cell patent thumbnailnew patent Solar cell
A surface reflectivity of a solar cell is reduced by applying a nanopillar array including a plurality of nanopillars to the solar cell. Further, by constituting the nanopillars with a si/sige superlattice and controlling a ge composition ratio of a sige layer (2), excited electron and hole are spatially separated in different layers, thus increasing a carrier lifetime, and at the same time, an optical-electrical conversion efficiency is improved by a multi-exciton phenomenon due to a quantum confinement effect.
Hitachi, Ltd.
02/19/15
20150050599
 Methods of providing patterned epitaxy templates for self-assemblable block copolymers for use in device lithography patent thumbnailMethods of providing patterned epitaxy templates for self-assemblable block copolymers for use in device lithography
A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g.
Asml Netherlands B.v.
02/19/15
20150049594

Thermally assisted magnetic recording medium and magnetic recording and reproducing apparatus


A thermally assisted magnetic recording medium (1) includes a substrate (101), an underlayer (3) that is formed above the substrate (101), and a magnetic layer (107) that is formed on the underlayer (3) and contains an alloy having an l10 structure as a main component. The underlayer (3) is formed by continuously laminating a first underlayer (104) having a bcc structure with a lattice constant that is 0.302 to 0.332 nm, a second underlayer (105) that has a nacl structure including c, and a third underlayer (106) that is composed of mgo..
Showa Denko K.k.
02/19/15
20150049318

Optical element, optical system, capturing apparatus, optical equipment, and original recording and manufacturing method therefor


An optical element includes a surface on which a plurality of structures is provided. The plurality of structures is provided to be fluctuated in a random direction from a lattice point at an interval which is equal to or shorter than a wavelength of visible light..
Sony Corporation
02/19/15
20150048453

Finfets and methods for forming the same


Embodiments of the present disclosure include a semiconductor device, a finfet device, and methods for forming the same. An embodiment is a semiconductor device including a first semiconductor fin extending above a substrate, the first semiconductor fin having a first lattice constant, an isolation region surrounding the first semiconductor fin, and a first source/drain region in the first semiconductor fin, the first source/drain having a second lattice constant different from the first lattice constant.
Taiwan Semiconductor Manufacturing Company, Ltd.
02/19/15
20150048418

Semiconductor power device


A semiconductor power device, comprising: a substrate; a first semiconductor layer with a first lattice constant formed on the substrate, wherein the first semiconductor layer comprises a first group iii element; a first grading layer formed on the first semiconductor layer and comprising a first portion; a second semiconductor layer with a second lattice constant formed on the first grading layer, wherein the second semiconductor layer comprises a second group iii element; and a first interlayer formed in the first grading layer and adjacent to the first portion of the first grading layer, wherein a composition of the first interlayer is different from that of the first portion, and the first grading layer comprises the first group iii element and the second group iii element, and concentrations of both the first group iii element and the second group iii element in the first grading layer are gradually changed.. .
Epistar Corporation
02/19/15
20150048309

Device with transparent and higher conductive regions in lateral cross section of semiconductor layer


A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells.
Sensor Electronic Technology, Inc.
02/19/15
20150048296

Semiconductor device having fin gate, resistive memory device including the same, and manufacturing the same


A semiconductor device having a fin gate that improves an operation current, and a method of manufacturing the same. The semiconductor device includes an active pillar formed on a semiconductor substrate, the active pillar including an inner region and an outer region surrounding the inner region, and a fin gate overlapping an upper surface and a lateral surface of the active pillar.
Sk Hynix Inc.
02/19/15
20150048295

Semiconductor device having fin gate, resistive memory device including the same, and manufacturing the same


A semiconductor device having a fin gate that improves an operation current, and a method of manufacturing the same are provided. The semiconductor device includes an active pillar formed on a semiconductor substrate, and including a first region and a second region surrounding at least one surface of the first region, and a fin gate extending to overlap an upper surface and a lateral surface of the active pillar.
Sk Hynix Inc.
02/19/15
20150048294

Variable resistive memory device including vertical channel pmos transistor and manufacturing the same


A semiconductor device having a vertical channel, a variable resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device having a vertical channel includes a vertical pillar formed on a semiconductor substrate and including an inner portion and an outer portion surrounding the inner portion, junction regions formed in the outer portion of the vertical pillar, and a gate formed to surround the vertical pillar.
Sk Hynix Inc.
02/19/15
20150048292

Semiconductor device having vertical channel, resistive memory device including the same, and manufacturing the same


A semiconductor device, a resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device includes a pillar extending substantially perpendicular from a semiconductor substrate, the pillar including an inner portion and an outer portion surrounding the inner portion.
Sk Hynix Inc.
02/19/15
20150047756

High strength mg alloy and producing same


Provided is an mg alloy and a method for producing same able to demonstrate high strength without requiring an expensive rare earth element (re). The high-strength mg alloy containing ca and zn within a solid solubility limit and the remainder having a chemical composition comprising mg and unavoidable impurities is characterized in comprising equiaxial crystal particles, there being a segregated area of ca and zn along the (c) axis of a mg hexagonal lattice within the crystal particle, and having a structure in which the segregated area is lined up by mg3 atomic spacing in the (a) axis of the mg hexagonal lattice.
National Insititute For Materials Science
02/19/15
20150047506

Hydrogen membrane separator


The present application is directed to a hydrophobic membrane assembly (28) used within a gas-generating apparatus. Hydrogen is separated from the reaction solution by passing through a hydrophobic membrane assembly (28) having a hydrophobic lattice like member (36) disposed within a hydrogen output composite (32) further enhancing the ability of the hydrogen output composite's ability to separate out hydrogen gas and prolonging its useful life..
The Commissariat A L'energie Atomique Et Aux Energies Alternatives
02/12/15
20150045903

Orthopedic implants and methods of manufacturing orthopedic implants


A method of manufacturing an orthopedic implant is provided. The method includes creating a 3d model of an orthopedic implant having a solid portion and a porous portion and selectively adjusting a physical property of at least one of porosity of the porous portion, lattice thickness of the porous portion, beam profile of the porous portion, and topography of the 3d model.
02/12/15
20150045566

Crystalline forms of 5alpha-androstane-3beta,5,6beta-triol and preparation methods therefor


The present invention relates to four crystalline forms (crystalline forms a, b, c and d) of 5α-androstane-3β,5,6β-triol (yc-6) and preparation methods therefor. The four crystalline forms have significant difference in their lattice parameters, 2θ values and intensity in x-ray power diffraction, and melting points, etc.
02/12/15
20150044597

Solid electrolyte, manufacturing solid electrolyte, solid electrolyte laminate, manufacturing solid electrolyte laminate, and fuel cell


Provided is a solid electrolyte made of yttrium-doped barium zirconate having hydrogen ion conductivity, a doped amount of yttrium being 15 mol % to 20 mol %, and a rate of increase in lattice constant at 100° c. To 1000° c.
Kyoto University
02/12/15
20150044518

Serviceable battery pack


A fail safe battery pack is disclosed and claimed wherein first and second housings are affixed together. A plurality of battery cells reside within and fixedly engage the first and the second housings.
02/12/15
20150043608

Soderberg electrode case design


An electrode case used to make a self-baking electrode that is consumed in a reducing arc furnace and the electrode made therefrom is described. The electrode case comprises an outer sleeve and a plurality of fins.
Dow Corning Corporation
02/12/15
20150041974

Sintered body of silver fine particle


A sintered body of silver fine particles for a bonding member to bond components of a semiconductor device, wherein an activation energy for creep of the sintered body of the silver fine particles is from 0.4 to 0.75 times that of an activation energy for a lattice diffusion of bulk silver.. .
Namics Corporation
02/12/15
20150041911

3d transistor channel mobility enhancement


A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region.
International Business Machines Corporation
02/12/15
20150041863

Multijunction photovoltaic device having an si barrier between cells


A photovoltaic device comprises an interface (8) between a layer of group iii-v material (3) and a layer of group iv material (1) with a thin silicon diffusion barrier (6) provided at or near the interface. The silicon barrier controls the diffusion of group v atoms into the group iv material, which is doped n-type thereby.
Iqe Plc.
02/12/15
20150041858

3d transistor channel mobility enhancement


A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region.
Globalfoundries, Inc.
02/12/15
20150041854

Finfet low resistivity contact formation method


The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate, and wherein a surface of the strained material has received a passivation treatment; an inter-layer dielectric (ild) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a dielectric layer coating the sidewalls and bottom of the opening, wherein the dielectric layer has a thickness ranging from 1 nm to 10 nm; a metal barrier coating an opening of the dielectric layer; and a metal layer filling a coated opening of the dielectric layer..
Taiwan Semiconductor Manufacturing Company, Ltd.
02/12/15
20150041853

Bonded epitaxial oxide structures for compound semiconductor on silicon substrates


A structure including a compound semiconductor layer epitaxially grown on an epitaxial oxide layer is provided wherein the lattice constant of the epitaxial oxide layer may be different from the semiconductor substrate on which it is grown. Fabrication of one structure includes growing a graded semiconductor layer stack to engineer a desired lattice parameter on a semiconductor substrate or layer.
International Business Machines Corporation
02/12/15
20150041581

String light storage lattice


The invention concerns a devise being a flat lattice frame for holding string lights, such as christmas lights, for tangle free storage designed to fit in a standard file storage box. It is designed in a manner for easy use, helps to minimize the required storage space and to approximately match the interior of a standard file box to provide vertical support.
02/12/15
20150041262

Reduction of particulate emissions from vehicle braking systems


A vehicle braking system reduces particulate emissions resulting from wear of the brake pad and rotor during stopping or slowing of a vehicle. The rotor includes at least one friction surface, that has an outer coating of a corrosion and wear-resistant material.
Tech M3, Inc.
02/05/15
20150039306

System and automated evaluation of transcription quality


Systems and methods automatedly evaluate a transcription quality. Audio data is obtained.
Verint Systems Ltd.
02/05/15
20150039228

Ultra-short-term forecasting method including real-time monitoring of the effect of upper and lower courses


An ultra-short-term forecasting method including real-time monitoring of the effect of upper and lower courses, comprising: obtaining ultra-short-term model forecast results through the model lattices based on the t639 global spectral model course library data source, the calmet wind field diagnostic model and static data; establishing statistical equations on the effect of upper and lower courses between the corresponding reference index station and each target wind tower for obtaining the effect of upper and lower courses of the target wind towers based on the wind tower database of the target wind power base and combined with the wind direction and speed real-time monitoring data of the reference index stations in the upper and lower courses, forecasting the ultra-short-term wind speed changes of each target wind tower and correct combined with the ultra-short-term model forecast results to form forecasting of the ultra-short-term wind speed changes of the wind towers in the target wind power base; after repeated cycling, obtaining forecasting of the future ultra-short-term wind speed changes of the wind farms in the target wind power base at all altitudes in the target area. The forecasting method has high forecasting precision, good prediction accuracy and wide application range..
Gansu Eletric Power Corporation Wind Power Technology Center
02/05/15
20150039068

Leads with electrode carrier for segmented electrodes and methods of making and using


A stimulation lead includes a lead body having a longitudinal length, a distal portion, and a proximal portion; terminals disposed along the proximal portion of the lead body; an electrode carrier coupled to, or disposed along, the distal portion of the lead body; segmented electrodes disposed along the electrode carrier; and conductors extending along the lead body and coupling the segmented electrodes to the terminals. The electrode carrier includes a lattice region defining segmented electrode receiving openings.
Boston Scientific Neuromodulation Corporation
02/05/15
20150037925

Method of fabricating a superlattice structure


A method of fabricating a superlattice structure requires that atoms of a first iii-v semiconductor compound be introduced into a vacuum chamber such that the atoms are deposited uniformly on a substrate. Atoms of at least one additional iii-v compound are also introduced such that the atoms of the two iii-v compounds form a repeating superlattice structure of alternating thin layers.
Teledyne Scientific & Imaging, Llc
02/05/15
20150037392

Liquid-permeable primary dressing having a fraction of heavy metal


The present invention relates to a fluid-permeable primary dressing in strip form, having pores, perforations or honeycomb lattices, which enable the passage of fluid, further having a content of at least one heavy metal present in elemental or ionic form.. .
02/05/15
20150036967

Periodic probabilistic two-dimensional cluster state generator with arbitrary interconnections


A periodic cluster state generator (pcsg) consisting of a monolithic integrated waveguide device that employs four wave mixing, an array of probabilistic photon guns, single mode sequential entanglers and an array of controllable entangling gates between modes to create arbitrary size and shape cluster states with several constraints. The cluster state is assumed linear or square lattice.
United States Air Force
02/05/15
20150036955

Sliding member and manufacturing method therefor


A thrust bearing is equipped with a resin coating applied to the surface of a base material. lattice-shaped discharge grooves are formed in the surface of the thrust bearing, and planer protrusions having a square shape or the like are formed at the adjacent positions thereof.
Taiho Kogyo Co., Ltd.
02/05/15
20150036709

Semiconductor laser device


A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group iii nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an ingan quantum well layer, a p-type group iii nitride semiconductor layer laminated on the active layer, and a transparent electrode contacting the p-type semiconductor layer and serving as a clad.
Rohm Co., Ltd.
02/05/15
20150035960

Imaging module


An imaging module includes: an imaging unit including a light receiving unit having a plurality of pixels arranged in a specified shape including a lattice shape and configured to receive light and to perform photoelectric conversion on the received light, the imaging unit being configured to capture an image of a subject and to output the image as a light quantity signal; a signal processing unit configured to perform signal processing on the light quantity signal; and a flexible substrate which includes a bendable insulating film and on which the imaging unit and the signal processing unit are mounted. The flexible substrate is bent to arrange the signal processing unit and the flexible substrate in a space extending from an outer edge of an incident surface of the imaging unit in a direction perpendicular to the incident surface while maintaining a shape of the outer edge..
Olympus Corporation
02/05/15
20150035802

Electronic underlay with wireless transmission function


Provided is an electronic underlay with a wireless transmission function, designed not to sense a hand holding a writing tool at the time of writing on a sheet. The electronic underlay with a wireless transmission function can be laid under a sheet to perform writing with a writing tool.
Nitto Denko Corporation
02/05/15
20150034908

Semiconductor graphene structures, methods of forming such structures and semiconductor devices including such structures


A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material, wherein the graphene-lattice matching material has a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. The semiconducting graphene structure may have an energy band gap of at least about 0.5 ev.
Micron Technology, Inc.
02/05/15
20150034519

Pallet container


The present invention relates to a pallet container (10) having a thin-walled inner container (12) made of thermoplastic material for storing and transporting liquid or flowable filling materials, having a lattice profile supporting casing (14) that closely encloses the inner container (12) as a supporting casing, and having a base pallet (16) on which the inner container (12) rests and to which the lattice profile supporting casing (14) is firmly connected, wherein the lattice profile supporting casing (14) comprises intersecting vertical (20) and horizontal (22) profile rods which are connected together at their intersecting points by mechanical joining, such as clinching or punch riveting, and wherein the profile rods (20, 22) are additionally fixed in a rotationally secure manner at their connecting points (18, 24, 26) via a mechanical form fit (42, 43); or a form-fitting bearing region (42, 43).. .
Mauser-werke Gmbh
02/05/15
20150034153

Compound photovoltaic cell


A compound photovoltaic cell includes a substrate, a first cell made of a first semiconductor material and formed on the substrate, a tunnel layer, and a second cell made of a second semiconductor material lattice mismatched with a material of the substrate, connected to the first cell via the tunnel layer, and disposed on an incident side with respect to the first cell, wherein band gaps of the first and the second cells become smaller from an incident side to a back side, and wherein the tunnel layer includes a p-type layer disposed on the incident side and a n-type layer disposed on the back side, the p-type layer being a p+-type (al)gainas layer, the n-type layer being an n+-type inp layer, an n+-type gainp layer having a tensile strain with respect to inp or n+-type ga(in)psb layer having a tensile strain with respect to inp.. .
Ricoh Company, Ltd.
02/05/15
20150034142

Solar cell stack


A solar cell stack having multiple semiconductor solar cells, each semiconductor solar cell having a first solar subcell with a top and a bottom and a first semiconductor solar cell, and wherein the first semiconductor solar cell has a first lattice constant, and the solar cell stack has a second solar subcell with a top and a bottom and a second semiconductor solar cell, and wherein the second semiconductor solar cell has a second lattice constant, and wherein the first solar subcell is arranged in a frictional manner with its bottom on the top of the second solar subcell, and wherein an abrupt difference is formed between the first lattice constant and the second lattice constant and the difference between the first lattice constant and the second lattice constant is at least 0.5% or an amorphous layer is formed.. .
Azur Space Solar Power Gmbh
02/05/15
20150033814

Nanostructured-lattices produced by surface mechanical attrition treatment method


The present invention is about the design and manufacturing method of constructing nano-structured lattices. The design of the four periodic two-dimensional lattices (hexagonal, triangulated, square and kagome) is described; and the process of making nano-structured lattices is outlined in the present invention..
Nano And Advanced Materials Institute Limited
02/05/15
20150033654

Steel lattice configuration


A prefabricated wall module is disclosed. The wall module includes a series or plurality of lattices.
Sismo Trading Ltd.
01/29/15
20150032443

Self-learning statistical natural language processing for automatic production of virtual personal assistants


Technologies for natural language request processing include a computing device having a semantic compiler to generate a semantic model based on a corpus of sample requests. The semantic compiler may generate the semantic model by extracting contextual semantic features or processing ontologies.
01/29/15
20150031193

Semiconductor substrate suitable for the realization of electronic and/or optoelectronic devices and relative manufacturing process


A semiconductive substrate (1) is described that is suitable for realising electronic and/or optoelectronic devices of the type comprising at least one substrate (3), in particular of single crystal silicon, and an overlying layer of single crystal silicon (5). Advantageously, according to the invention, the semiconductive substrate (1) comprises at least one functional coupling layer (10) suitable for reducing the defects linked to the differences in the materials used.
Consiglio Nazionale Delle Ricerche
01/29/15
20150029710

Cover bottom and display device using the same


Disclosed are a cover bottom, which includes a plurality of led frames with an led array adhered thereto and a plurality of reinforcing frames coupled to the led frames in a lattice type, and a display device using the same. The cover bottom includes at least two or more light emitting diode (led) frames, to which an led array is adhered, and at least two or more reinforcing frames coupled to the led frames in a lattice type..
Lg Display Co., Ltd.
01/29/15
20150028457

Epitaxial substrate, semiconductor device, and manufacturing semiconductor device


The present invention includes: a silicon-based substrate; and an epitaxial growth layer that has a configuration in which first and second nitride semiconductor layers having different lattice constants and thermal expansion coefficients are alternately laminated, and is arranged on the silicon-based substrate so that a film thickness thereof is gradually reduced at an outer edge portion. As a result, there are provided an epitaxial substrate and a semiconductor device in which generation of cracks at the outer edge portion is suppressed, and a method for manufacturing the semiconductor device..
Shin-etsu Handotai Co., Ltd.
01/29/15
20150028286

Method for growing germanium/silicon-germanium superlattice


A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (sls) using an ultra-high vacuum-chemical vapor deposition (uhv-cvd) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth.
Bae Systems Information & Electronic Systems Integration Inc.


Popular terms: [SEARCH]

Lattice topics: Semiconductor, Semiconductor Device, Semiconductor Material, Crystallin, Disconnect, Transistors, Replacement Gate, Semiconductor Devices, Dislocations, Dislocation, Image Processing, Coordinates, Surface Plasmon Polariton, Antenna Array

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