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This page is updated frequently with new Lattice-related patent applications. Subscribe to the Lattice RSS feed to automatically get the update: related Lattice RSS feeds. RSS updates for this page: Lattice RSS RSS


Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production

Oned Material

Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production

Solar cells having selective contacts and three or more terminals

Board Of Trustees Of Leland Stanford Junior University

Solar cells having selective contacts and three or more terminals

Date/App# patent app List of recent Lattice-related patents
05/21/15
20150140763
 Contact structure of semiconductor device patent thumbnailnew patent Contact structure of semiconductor device
The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an inter-layer dielectric (ild) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a semiconductor layer on the sidewalls and bottom of the opening; a dielectric layer on the semiconductor layer; and a metal layer filling an opening of the dielectric layer..
Taiwan Semiconductor Manufacturing Company, Ltd.
05/21/15
20150140333
 Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production patent thumbnailnew patent Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
Porous and/or curved nanofiber bearing substrate materials are provided having enhanced surface area for a variety of applications including as electrical substrates, semipermeable membranes and barriers, structural lattices for tissue culturing and for composite materials, production of long unbranched nanofibers, and the like. A method of producing nanofibers is disclosed including providing a plurality of microparticles or nanoparticles such as carbon black particles having a catalyst material deposited thereon, and synthesizing a plurality of nanofibers from the catalyst material on the microparticles or nanoparticles.
Oned Material Llc
05/21/15
20150140198
 Blade assembly and  making cut food products patent thumbnailnew patent Blade assembly and making cut food products
A lattice-cut potato product is sliced so that the ridges and grooves on one surface of the slices are oriented transversely to the ridges and grooves on the opposite surface of the slices. The sizes and shapes of the ridges and grooves are particularly selected so that each point in the interior of a slice is no greater than a specified distance from an outer surface of the slice.
Mccain Foods Usa, Inc.
05/21/15
20150138833
 Backlight module and liquid cyrstal display device including the same patent thumbnailnew patent Backlight module and liquid cyrstal display device including the same
The present disclosure relates to a backlight module and a liquid crystal display device including the backlight module. The backlight module includes a light guide plate and a planar reflecting sheet arranged below the light guide plate, wherein a plurality of lattice points are provided on the upper surface of the light guide plate so that the upper surface forms a light-emitting surface, and a plurality of cylindrical projections in contact with the planar reflecting sheet are formed on the lower surface of the light guide plate.
Shenzhen China Star Optoelectronics Technology Co., Ltd
05/21/15
20150138576
 Profile creation method, non-transitory computer readable recording medium stored with profile creation program, and profile creating apparatus patent thumbnailnew patent Profile creation method, non-transitory computer readable recording medium stored with profile creation program, and profile creating apparatus
Provided is a profile creation method for creating a color conversion profile for an image forming apparatus which forms an image by performing, on an input color value having total use amount of color material exceeding set amount, a process for reducing the total use amount, by interpolating lattice points in a look-up table. The profile creation method includes: determining whether a point of an input color value with the total use amount of color material being equal to the set amount exists between two adjacent lattice points in the look-up table; and, when it is determined so, calculating an output color value of an interpolation point set between the two lattice points, by a polynomial interpolation method for performing interpolation calculation by using, besides output color values of the two lattice points, an output color value of a lattice point other than the two lattice points..
Konica Minolta, Inc.
05/21/15
20150138565
 Calibration method and shape measuring apparatus patent thumbnailnew patent Calibration method and shape measuring apparatus
A calibration method includes acquiring a captured image of a lattice fringe by providing a reference gauge having a reference surface whose height from a reference plane changes in a first direction, projecting a fringe pattern having the same phase along the first direction with respect to the reference surface and having a phase changing in a second direction crossing the first direction, and imaging the fringe pattern; calculating a phase of each pixel along the first direction in the captured image of the fringe pattern; and generating relational data in which the height of the reference surface corresponding to the pixel, the phase calculated with respect to the pixel, and a period of the fringe pattern at the time of calculating the phase are associated with each other.. .
Seiko Epson Corporation
05/21/15
20150137263
 Semiconductor device having fin-type field effect transistor and  manufacturing the same patent thumbnailnew patent Semiconductor device having fin-type field effect transistor and manufacturing the same
A field effect transistor includes a fin structure, having a sidewall, protruding from a substrate, and a device isolation structure on the substrate, the device isolation structure defining the sidewall of the fin structure, wherein the fin structure includes a buffer semiconductor pattern disposed on the substrate and a channel pattern disposed on the buffer semiconductor pattern, wherein the buffer semiconductor pattern has a lattice constant different from that of the channel pattern, and wherein the device isolation structure includes a gap-fill insulating layer, and includes an oxidation blocking layer pattern disposed between the buffer semiconductor pattern and the gap-fill insulating layer.. .
05/21/15
20150136214
 Solar cells having selective contacts and three or more terminals patent thumbnailnew patent Solar cells having selective contacts and three or more terminals
Junction-less solar cells having three or more terminals are provided. Electron- and hole-selective contacts and interfaces are used in combination with two or more absorber layers having different bandgaps to provide multi-material solar cells that have no requirement for either lattice matching or current matching..
The Board Of Trustees Of The Leland Stanford Junior University
05/14/15
20150133989
 Expandable occlusion devices and methods of use patent thumbnailExpandable occlusion devices and methods of use
An occlusion device and method for occluding an undesirable vascular structure, such as a septal defect or left atrial appendage. The occlusion device includes a lattice structure that expands from a contracted catheter-deliverable state to an expanded state that occludes the vascular structure.
05/14/15
20150131133
 Fast generation of pure phase digital holograms patent thumbnailFast generation of pure phase digital holograms
Fast processing of information represented in digital holograms is provided to facilitate generating a phase-only hologram for displaying 3-d holographic images representative of a 3-d object scene on a display device. A holographic generator component (hgc) can receive or generate visual images, comprising depth and parallax information, of a 3-d object scene.
05/14/15
20150129974

Transistor including a stressed channel, a fabricating the same, and an electronic device including the same


A semiconductor device includes a first channel, a second channel, a first strained gate electrode including a first lattice-mismatched layer for applying a first stress to the first channel, and a second strained gate electrode including a second lattice-mismatched layer for applying a second stress to the second channel.. .
05/14/15
20150129932

Systems and methods for a semiconductor structure having multiple semiconductor-device layers


A method of fabricating a semiconductor structure having multiple semiconductor device layers is provided. The method comprises providing a bulk substrate and growing a first channel material on the bulk substrate wherein the lattice constant of the channel material is different from the lattice constant of the bulk substrate to introduce strain to the channel material.
05/14/15
20150129931

Transistor, fabricating the same, and electronic device including the same


A semiconductor device includes a stressed substrate stressed by a first stress, a first stressed channel formed in the substrate and having the first stress, and a first strained gate electrode strained by a first strain generating element. A first strained gate electrode is formed over the first stressed channel, the first strained gate electrode including a first lattice-mismatched layer to induce a second stress to the first stressed channel..
05/14/15
20150129838

Bare quantum dots superlattice photonic devices


Manipulation of the passivation ligands of colloidal quantum dots and use in qd electronics. A multi-step electrostatic process is described which creates bare qds, followed by the formation of qd superlattice via electric and thermal stimulus.
05/14/15
20150129835

Multiple quantum well semiconductor light emitting element


A semiconductor light emitting element includes: an n-type semiconductor layer; a super lattice structure layer formed on the n-type semiconductor layer and including repeatedly-formed first semiconductor layers and second semiconductor layers having a composition with a band gap greater than that of the first semiconductor layer; an electron injection control layer including a first control layer formed on the second semiconductor layer of super lattice structure layer and a second control layer formed on the first control layer; and an mqw light emitting layer formed on the second control layer and including repeatedly-formed barrier layers and quantum well layers. The first control layer has a composition with a band gap smaller than that of the second semiconductor layer of super lattice structure layer.
05/14/15
20150129525

Convertible display fixture


A display fixture includes a base, a platform, a lattice structure, a raised shelf and a plurality of bins. The base includes an open top, a bottom floor and walls that define an interior space that is divided into sections using a plurality of partitions.
05/14/15
20150128871

Primate restraint device


When a primate is t restrained by a movable partition wall, friction with vertical bars of a lattice of the partition wall causing damages on roots of limbs of the primate is alleviated to reduce or solve such damages. In a primate restraint device comprising a containing body having both side surfaces, a top surface and a bottom surface, a rear surface door capable of opening and shutting the rear surface side of the containing body, and a partition wall formed movably frontward and rearward in the containing body and capable of being fixed at a desired position in the containing body, some sites among vertical bar members of the partition wall, with which roots of limbs of the primate are brought into contact while the limbs are forced to protrude frontward and restrained, are covered with protective cylinders which are rotatable with respect to the vertical bar members..
05/07/15
20150125749

Novel phosphate based composite anode material, preparation method and use thereof


The present invention relates to a novel phosphate based composite anode material, preparation method and uses thereof. Specifically disclosed is a phosphate based composite cell anode material, the material having monoclinic and orthorhombic crystal lattice structures with the chemical formula of a3-xv2-ymy(po4)3, wherein a is li+, na+ or the mixture thereof, m is mg, al, sc, ti, cr, mn, fe, co, ni, cu, zn or nb, 0≦x≦3.0, 0≦y≦2.0, and c is the carbon layer.
Ningbo Institute Of Materials & Engineering, Chinese Academy Of Sciences
05/07/15
20150125483

Fusion proteins of ciliate granule lattice proteins, granular protein particles thereof, and uses therefor


This invention is directed to methods for the production of immunogenic granular particles. In certain embodiments, the invention is directed to methods and products for the production immunogenic granular particles produced in ciliates.
Tetragenetics, Inc.
05/07/15
20150124252

Photonic crystal sensor apparatus and techniques


Apparatus and methods can include an optical waveguide coupled to a photonic crystal comprising a dielectric material, the photonic crystal located on an exterior surface of the optical waveguide and comprising a first surface including a first array of periodic features on or within the dielectric material, the array extending in at least two dimensions and including an effective dielectric permittivity different from the surrounding dielectric material. In an example, the periodic features include a specified lattice constant, the periodic features configured to extract a portion of propagating optical energy from the waveguide through the photonic crystal, the portion determined at least in part by the specified lattice constant..
The Trustees Of Columbia University In The City Of New York
05/07/15
20150122915

Atomizer with a lattice mixer


An atomizer comprises a static mixer configured to mix components of a coating agent with one another. The mixer has a plurality of fixed mixing elements and is constructionally integrated into the atomizer, and the mixer is a lattice mixer having mixing elements that are arranged intertwined in a lattice-like manner..
Duerr Systems, Gmbh
05/07/15
20150122684

End support for wound rolls


An end support for supporting a roll of material wound on a tubular core is defined by a generally rectangular plate and a projecting hub member. The hub is dimensioned for insertion into a tubular core material roll.
Sonoco Development, Inc.
05/07/15
20150122318

Lattice matchable alloy for solar cells


An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 ev, namely, ga1-xinxnyas1-y-zsbz with a low antimony (sb) content and with enhanced indium (in) content and enhanced nitrogen (n) content, achieving substantial lattice matching to gaas and ge substrates and providing both high short circuit currents and high open circuit voltages in gainnassb subcells for multijunction solar cells. The composition ranges for ga1-xinxnyas1-y-zsbz are 0.07≧x≧0.18, 0.025≧y≧0.04 and 0.001≧z≧0.03..
Solar Junction Corporation
04/30/15
20150118708

Method and device for detecting bacteria and determining the concentration thereof in a liquid sample


A method for detecting bacteria and determining the concentration thereof in a liquid sample includes the steps of taking an optical section through a container holding a volume of the liquid sample at a predetermined field of view and at a predetermined focal plane depth or angle and after a period of time has elapsed to allow non-bacteria in the sample to settle to the bottom of the container. Since bacteria auto arranges in the liquid sample, forming a lattice-like grid pattern, an optical section through the volume of auto-arranged bacteria may be used to measure the quantity of bacteria residing in that section.
Idexx Laboratories, Inc.
04/30/15
20150118566

Negative electrode material for secondary battery, and secondary battery


The graphite has exothermic peaks in the range of 600° c. Or lower and in the range of 690° c.
04/30/15
20150118557

Hydrogen storage alloy, hydrogen storage alloy electrode, secondary battery, and producing hydrogen storage alloy


Provided is a hydrogen storage alloy which is characterized in that two or more crystal phases having different crystal structures are layered in a c-axis direction of the crystal structures. The hydrogen storage alloy is further characterized in that a difference between a maximum value and a minimum value of a lattice constant a in the crystal structures of the laminated two or more crystal phases is 0.03 Å or less..
National Institute Of Advanced Industrial Science And Technology
04/30/15
20150117552

Reconstructing a multi-latticed video signal


An apparatus for facilitating reception of multiple representations of a video signal. In one embodiment, the apparatus includes a mechanism for receiving plural representations of the video signal corresponding to plural decimated versions of the video signal, associating pictures of the received plural representations of the video signal, and outputting pictures corresponding to information from associated pictures in accordance with a relative temporal order..
Cisco Technology, Inc.
04/30/15
20150115320

Lattice-mismatched semiconductor structures and related methods for device fabrication


lattice-mismatched materials having configurations that trap defects within sidewall-containing structures.. .
Taiwan Semiconductor Manufacturing Company, Ltd.
04/30/15
20150115299

Iii-nitride light emitting device


A device includes a substrate (10) and a iii-nitride structure (15) grown on the substrate, the iii-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a rao3 (mo)n where r is one of a trivalent cation: sc, in, y and a lanthanide; a is one of a trivalent cation: fe (iii), ga and al; m is one for a divalent cation: mg, mn, fe (ii), co, cu, zn and cd; and n is an integer ≧1.
asubstrate−alayer
04/30/15
20150115221

Efficient light extraction from weakly-coupled dielectric buttes


A light emitting diode (led) with weakly-coupled dielectric buttes deposited along the surface is disclosed. The buttes improve light extraction from a distributed volume of incoherent sources in a high-index substrate, as well as from light backscattered by a rear metallic contact.
Terahertz Device Corporation
04/30/15
20150115177

Cold-worked metal articles including luminescent phosphor particles, methods of forming the same, and methods of authenticating the same


Cold-worked metal articles, methods of forming cold-worked metal articles, and methods of authenticating cold-worked metal articles are provided. In an embodiment, a cold-worked metal article includes a cold-worked metal-containing surface that defines pores.
Honeywell International Inc.
04/30/15
20150115141

Optical encoder


An optical encoder, comprising a plurality of light receiving elements 1-12, receiving light that has passed through or been reflected by a scale having a lattice of pitch p, and outputting four-phase signals that have been respectively offset in phase by an integer number of times 90° (1/4p). 12 light receiving elements being are in the lateral direction (scale longitudinal direction) with gaps between them of p/60 or 2p/60, four arbitrary light receiving elements arranged next to each other in a row all output signals of different phases, and light receiving elements respectively outputting signals of same phase have three lateral widths of 70p/60, 13p/60 or 20p/60..
Okuma Corporation
04/30/15
20150114919

Storage rack


There is a storage rack includes a plurality of lattice posts that include first and second post elements arranged in a y-axis direction at a first distance, and vertical lattice members connecting the first and second post elements; a post connecting beam that connects the first and second post elements of the lattice post; a horizontal support beam whose ends are fastened to centers of the post connecting beams to connect the lattice posts arranged in an x-axis direction at a second distance; a plurality of goods supporting posts whose ends are fastened along a central line of the horizontal support beam to be arranged between the lattice posts arranged at the second distance at a predetermined distance along the goods layering spaces; and a plurality of goods supporting beams whose ends are fastened to the goods supporting post to be arranged in a z-axis direction at a third distance.. .
04/23/15
20150112643

Infra-red analysis of diamonds


The invention provides a method of automating the classification of a diamond gemstone. An infra-red absorption spectrum of the gemstone is provided.
De Beers Centenary Ag
04/23/15
20150111979

Method for curing structures using a dual photoinitiator system and a structure made using the same


A monomeric formulation for fabrication of microlattice structures, the monomeric formulation including a plurality of monomers, a first photoinitiator configured to substantially activate above a wavelength of light, and a second photoinitiator configured not to substantially activate above the wavelength of light and to substantially activate below the wavelength of light.. .
Hrl Laboratories, Llc
04/23/15
20150111722

Metal modified y zeolite, its preparation and use


The present invention relates to a metal modified y zeolite, its preparation and use. Said zeolite contains 1-15 wt % of ivb group metal as oxide and is characterized in that the ratio of the zeolite surface's ivb group metal content to the zeolite interior's ivb group metal content is not higher than 0.2; and/or the ratio of the distorted tetrahedral-coordinated framework aluminum to the tetrahedral-coordinated framework aluminum in the zeolite lattice structure is (0.1-0.8):1..
Research Institute Of Petroleum Processing, Sinopec
04/23/15
20150111721

Metal modified y zeolite, its preparation and use


The present invention relates to a metal modified y zeolite, its preparation and use. Said zeolite contains 1-15 wt % of ivb group metal as oxide and is characterized in that the ratio of the zeolite surface's ivb group metal content to the zeolite interior's ivb group metal content is not higher than 0.2; and/or the ratio of the distorted tetrahedral-coordinated framework aluminum to the tetrahedral-coordinated framework aluminum in the zeolite lattice structure is (0.1-0.8):1..
Research Institute Of Petroleum Processing, Sinopec
04/23/15
20150108545

Fin field effect transistors including multiple lattice constants and methods of fabricating the same


A field effect transistor (fet) structure may include a fin on a substrate having a first lattice constant and at least two different lattice constant layers on respective different axially oriented surfaces of the fin, wherein the at least two different lattice constant layers each comprise lattice constants that are different than the first lattice constant and each other.. .
Samsung Electronics Co., Ltd.
04/23/15
20150108543

Source/drain structure of semiconductor device


The disclosure relates to a semiconductor device. An exemplary structure for a field effect transistor comprises a substrate comprising a major surface and a cavity below the major surface; a gate stack on the major surface of the substrate; a spacer adjoining one side of the gate stack; a shallow trench isolations (sti) region disposed on the side of the gate stack, wherein the sti region is within the substrate; and a source/drain (s/d) structure distributed between the gate stack and sti region, wherein the s/d structure comprises a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; and a s/d extension disposed between the substrate and strained material, wherein the s/d extension comprises a portion extending below the spacer and substantially vertical to the major surface..
Taiwan Semiconductor Manufacturing Company, Ltd.
04/23/15
20150108518

Nitride semiconductor light emitting device


A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer.
Panasonic Intellectual Property Management Co., Ltd.
04/23/15
20150108505

Diamond semiconductor system and method


Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond material having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/vs to the diamond lattice at 100 kpa and 300k.
04/23/15
20150108351

Scanning electron microscope


Conventionally, in a general-purpose scanning electron microscope, the maximum accelerating voltage which can be set is low, and hence thin crystal samples which can be observed under normal high-resolution observation conditions are limited to samples with large lattice spacing. For this reason, there has no means for accurately performing magnification calibration.
Hitachi High-technologies Corporation
04/23/15
20150107658

Four junction inverted metamorphic multijunction solar cell with two metamorphic layers


A multijunction solar cell including an upper first solar subcell having a first band gap; a second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap; a first graded interlayer adjacent to the second solar subcell; the first graded interlayer having a third band gap greater than the second band gap; and a third solar subcell adjacent to the first graded interlayer, the third subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A second graded interlayer is provided adjacent to the third solar subcell; the second graded interlayer having a fifth band gap greater than the fourth band gap; and a lower fourth solar subcell is provided adjacent to the second graded interlayer, the lower fourth subcell having a sixth band gap smaller than the fourth band gap such that the fourth subcell is lattice mismatched with respect to the third subcell..
Emcore Soloar Power, Inc.
04/23/15
20150107181

Node structures for lattice frames


A node structure for connecting a member of a lattice frame to one or more other members of the frame comprises a hollow brace having opposed walls that converge outwardly at an acute angle in cross-section toward a central plane to connect at an outer edge. At least one root portion has a central longitudinal axis extending outwardly in the central plane of the brace for alignment with a member of the frame.
Vestas Wind Systems A/s
04/16/15
20150105241

Process for the production of non-sintered transition metal carbide and nitride nanoparticles


Transition metal carbide, nitride, phosphide, sulfide, or boride nanoparticles can be made by transforming metal oxide materials coated in a ceramic material in a controlled environment. The coating prevents sintering while allowing the diffusion of reactive gases through the inorganic matrix that can then alter the metal nanoparticle oxidation state, remove oxygen, or intercalate into the lattice to form a carbide, nitride, phosphide, sulfide, or boride..
Massachusetts Institute Of Technology
04/16/15
20150104889

Semiconductor device, manufacturing semiconductor device, semiconductor manufacturing and inspecting apparatus, and inspecting apparatus


A semiconductor device having cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (csl) boundary having a grain boundary sigma value 27 or less to all crystal grain boundaries of a cu wiring to 60% or higher.
Renesas Electronics Corporation
04/16/15
20150104294

Fan inlet air handling apparatus and methods


Particular embodiments of the inventive technology may be described as an air handling shroud for establishment at the inlet area of a fan, the shroud adapted to realign and/or redistribute fan inlet flow so as to reduce fan-generated noise without unacceptably impairing fan efficiency and/or performance. Certain embodiments present a lattice arrangement of cells through which air flows; the shroud may protrude up from an inlet face lying in a plane defined by the fan (e.g., by the fan housing or an inlet cone).
Acoustiflo, Llc
04/16/15
20150103495

Electronic component module


A plating layer of a cu—m-based alloy (m represents ni and/or mn) is formed on an end surface of a connection terminal member at an exposed side, the cu—m-based alloy being capable of generating an intermetallic compound with an sn-based low-melting-point metal contained in a bonding material forming a bonding portion and having a lattice constant different from that of the intermetallic compound by 50% or more. In the reflow process, even if the bonding material is about to flow out by re-melting thereof, since the bonding material is brought into contact with the cu—m-based plating layer, a high-melting-point alloy of the intermetallic compound is formed so as to block the interface between the connection terminal member and the resin layer..
Murata Manufacturing Co., Ltd.
04/16/15
20150102465

Material quality, suspended material structures on lattice-mismatched substrates


Suspended structures are provided using selective etch technology. Such structures can be protected on all sides when the selective undercut etch is performed, thereby providing excellent control of feature geometry combined with superior material quality..
The Board Of Trustees Of The Leland Stanford Junior University
04/16/15
20150102387

High electron mobility transistors with minimized performance effects of microcracks in the channel layers


In hemts based on iii-nitrides epitaxial films or gaas, algaas and ingaas epitaxial films, unwanted microcracks are often formed in the composite epitaxial layers in the channel region during fabrication and operation. These microcracks are caused by strain or stresses due to lattice mismatch and thermal expansion coefficient differences between materials and substrate's.
04/16/15
20150101365

Method of providing markings to precious stones including gemstones and diamonds, and markings and marked precious stones marked according to such a method


An identifiable mark on a portion of a polished facet of a surface of an article and being identifiable by an optical magnifying viewing device, said identifiable mark comprising a nano-structure formed by a two-dimensional or a three-dimensional lattice of a plurality of discrete nanometer sized recessed or protruded entities, wherein said entities are arranged within a predefined region of said polished facet in a predetermined arrangement in relation to each other and such that an outer interface surface between the facet of the article and air is formed and an inner interface surface between the facet of the article and air is formed. Said predetermined arrangement of said entities is non-uniform and non-periodic arrangement, and wherein said entities are sized and shaped so as to cause optical scattering upon reflection of incident light and the distance from the inner interface surface to the outer interface surface is greater than the amplitude of the non-marked portion of said polished face.
Master Dynamic Limited
04/09/15
20150100316

System and advanced turn-taking for interactive spoken dialog systems


Disclosed herein are systems, methods, and non-transitory computer-readable storage media for advanced turn-taking in an interactive spoken dialog system. A system configured according to this disclosure can incrementally process speech prior to completion of the speech utterance, and can communicate partial speech recognition results upon finding particular conditions.
At&t Intellectual Property I, L.p.
04/09/15
20150100148

Printing plate manufacturing apparatus and computer-readable non-transitory recording medium storing a data generating program and a control program for a printing plate manufacturing apparatus


A computer readable non-transitory recording medium storing a control program for controlling a manufacturing apparatus which manufactures a printing plate from a thermoplastic porous material and comprises a thermal head with a plurality of heater elements, the control program causing a computer to: acquire print data corresponding to a print pattern and including pixel data, with each item of pixel data corresponding to each area of the surface of the porous material partitioned into a lattice shape; identify, based on the print data, print pixel data that is part of the pixel data and is pixel data comprising the print pattern, and non-print pixel data that is the other part of the pixel data and is pixel data not comprising the print pattern; selectively apply a first heat quantity to a first area corresponding to the non-print pixel data by at least one first heater element, among the plurality of heater elements provided on the thermal head, that makes contact with the first area; and selectively apply a second heat quantity that is smaller than the first heat quantity to a second area by at least one second heater element, among the plurality of heater elements, that makes contact with the second area identified by the control data of the print pixel data, the second area being where ink readily runs.. .
Casio Computer Co., Ltd.
04/09/15
20150099623

Oxide film and proton conductive device


The present invention provides an oxide film composed of an oxide having a perovskite crystal structure. The oxide is represented by a chemical formula a1-x(e1-ygy)oz.
Panasonic Corporation
04/09/15
20150099350

Enabling high activation of dopants in indium-aluminum-galium-nitride material system using hot implantation and nanosecond annealing


Embodiments of the present disclosure generally relate to doping and annealing substrates. The substrates may be doped during a hot implantation process, and subsequently annealed using a nanosecond annealing process.
Applied Materials, Inc.
04/09/15
20150099300

Use of adipose tissue-derived stromal cells for chondrocyte differentiation and cartilage repair


Methods and compositions for directing adipose-derived stromal cells cultivated in vitro to differentiate into cells of the chondrocyte lineage are disclosed. The invention further provides a variety of chondroinductive agents which can be used singly or in combination with other nutrient components to induce chondrogenesis in adipose-derived stromal cells either in cultivating monolayers or in a biocompatible lattice or matrix in a three-dimensional configuration.
Artecel Sciences Inc.
04/09/15
20150097239

Passivation structure of fin field effect transistor


A finfet comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower fin portion comprising a first semiconductor material having a first lattice constant; an upper fin portion comprising a second semiconductor material having a second lattice constant greater than the first lattice constant; a middle fin portion comprising a third semiconductor material having a third lattice constant between the first lattice constant and the second lattice constant; and a passivation structure surrounding the fin structure comprising a lower passivation portion surrounding the lower fin portion comprising a first oxynitride of the first semiconductor material; an upper passivation portion surrounding the upper fin portion comprising a second oxynitride of the second semiconductor material; and a middle passivation portion surrounding the middle fin portion comprising a third oxynitride of the third semiconductor material.. .
Taiwan Semiconductor Manufacturing Company, Ltd.
04/02/15
20150094847

Error correction amount creating device


In an error correction amount creating device that creates an error correction amount for a five-axis machine controlled by a numerical controller and having three linear axes and two rotation axes, the translation error correction amount and the rotation error correction amount for each lattice point of a lattice region into which a two-dimensional coordinate system space with the rotation axes is divided is obtained from data measured for each position of division of the respective axes and given to the numerical controller.. .
Fanuc Corporation


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Lattice topics: Semiconductor, Semiconductor Device, Semiconductor Material, Crystallin, Disconnect, Transistors, Replacement Gate, Semiconductor Devices, Dislocations, Dislocation, Image Processing, Coordinates, Surface Plasmon Polariton, Antenna Array

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