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This page is updated frequently with new Lattice-related patent applications. Subscribe to the Lattice RSS feed to automatically get the update: related Lattice RSS feeds. RSS updates for this page: Lattice RSS RSS


Method of fabricating a three-dimensional (3d) porous electrode architecture for a microbattery

Method of fabricating a three-dimensional (3d) porous electrode architecture for a microbattery

Scattered pilot pattern and channel estimation method for mimo-ofdm systems

Scattered pilot pattern and channel estimation method for mimo-ofdm systems

Scattered pilot pattern and channel estimation method for mimo-ofdm systems

Video wall and fixing apparatus therefor

Date/App# patent app List of recent Lattice-related patents
10/23/14
20140315453
 Stand-up paddle board and method of manufacture patent thumbnailStand-up paddle board and method of manufacture
A stand-up paddle board is formed by a core surrounded by a skin. The core is manufactured by creating an upper core member mold and a lower core member mold, corresponding to the top and bottom of the core.
10/23/14
20140314948
 Method of fabricating a three-dimensional (3d) porous electrode architecture for a microbattery patent thumbnailMethod of fabricating a three-dimensional (3d) porous electrode architecture for a microbattery
A method of fabricating a 3d porous electrode architecture comprises forming a microbattery template that includes (a) a lattice structure comprising a first lattice portion separated from a second lattice portion on a substrate, and (b) a solid structure on the substrate including a separating portion between the first and second lattice portions. Interstices of the first lattice portion are infiltrated with a first conductive material and interstices of the second lattice portion are infiltrated with a second conductive material.
10/23/14
20140314183
 Scattered pilot pattern and channel estimation method for mimo-ofdm systems patent thumbnailScattered pilot pattern and channel estimation method for mimo-ofdm systems
A method and apparatus are provided for reducing the number of pilot symbols within a mimo-ofdm communication system, and for improving channel estimation within such a system. For each transmitting antenna in an ofdm transmitter, pilot symbols are encoded so as to be unique to the transmitting antenna.
10/23/14
20140313645
 Video wall and fixing apparatus therefor patent thumbnailVideo wall and fixing apparatus therefor
Disclosed is a fixing apparatus for a video wall to fix a plurality of display panels disposed in a lattice pattern, including a plurality of top case units each positioned between neighboring ones of the display panels, each of the top case units comprising a middle frame inserted between the neighboring ones of the display panels to extend to rear surfaces of the display panels, and a bezel frame extending from the middle frame to opposite sides in a perpendicular direction to the middle frame to cover ends of front surfaces of neighboring display panels, and a fastening member fastened to the middle frame extending to the rear surfaces of the display panels to fix the display panels. In the fixing apparatus, neighboring display panels share one top case, and thus the gap between the display panels for a video wall may be reduced..
10/23/14
20140312463
 Semiconductor structures, devices and engineered substrates including layers of semiconductor material having reduced lattice strain patent thumbnailSemiconductor structures, devices and engineered substrates including layers of semiconductor material having reduced lattice strain
Methods of fabricating semiconductor devices or structures include forming structures of a semiconductor material overlying a layer of a compliant material, subsequently changing the viscosity of the compliant material to relax the semiconductor material structures, and utilizing the relaxed semiconductor material structures as a seed layer in forming a continuous layer of relaxed semiconductor material. In some embodiments, the layer of semiconductor material may comprise a iii-v type semiconductor material, such as, for example, indium gallium nitride.
10/23/14
20140312370
 Optoelectronic device patent thumbnailOptoelectronic device
An optoelectronic device comprising a first semiconductor layer having a first lattice constant; a second semiconductor layer having a second lattice constant, wherein the second lattice constant is smaller than the first lattice constant; and a first buffer layer formed between the first semiconductor layer and the second semiconductor layer, wherein a lattice constant of one side of the first buffer layer near the second semiconductor layer is smaller than the second lattice constant.. .
10/23/14
20140312304
 Light receiving element, semiconductor epitaxial wafer, detecting device, and method for manufacturing light receiving element patent thumbnailLight receiving element, semiconductor epitaxial wafer, detecting device, and method for manufacturing light receiving element
Provided are a light receiving element etc. Which have a high responsivity over the near- to mid-infrared region and stably have a high quality while maintaining the economical efficiency.
10/23/14
20140312301
 Production of a semiconductor device having at least one column-shaped or wall-shaped semiconductor element patent thumbnailProduction of a semiconductor device having at least one column-shaped or wall-shaped semiconductor element
Described is a method for producing a semiconductor device (100), in which at least one column-shaped or wall-shaped semiconductor device (10, 20) extending in a main direction (z) is formed on a substrate (30), wherein at least two sections (11, 13, 21, 23) of a first crystal type and one section (12, 22) of a second crystal type therebetween are formed in an active region (40), each section with a respective predetermined height (h1, h2), wherein the first and second crystal types have different lattice constants and each of the sections of the first crystal type has a lattice strain which depends on the lattice constants in the section of the second crystal type. According to the invention, at least a height (h2) of the section (12, 22) of the second crystal type and a lateral thickness (d) of the active region (40) is formed perpendicular to the main direction, in such a manner that the lattice strain in one of the sections (11) of the first crystal type also depends on the lattice constants in the other section (13) of the first crystal type.
10/23/14
20140311708
 Refrigeration from graphene-based nanoemitters patent thumbnailRefrigeration from graphene-based nanoemitters
This disclosure presents the use of electrons as the ‘working fluid’ in conjunction with a solid nanomaterial that hinders electron coupling to the atomic lattice of the nanomaterial, i.e., they are out of equilibrium. The electrons can achieve very high effective temperatures with minimal heating of the solid lattice.
10/16/14
20140309104
 Composite oxide patent thumbnailComposite oxide
Provided is a composite oxide which is suitable as a co-catalyst for an exhaust gas purifying catalyst or the like, has high heat resistance, and has an excellent oxygen absorbing and desorbing capability at low temperatures. The composite oxide contains ce and zr, wherein the ce content is 30 to 80 at % and the zr content is 20 to 70 at %, based on the total of ce and zr being 100 at %, or further contains particular element m, wherein the ce content is not less than 30 at % and less than 80 at %, the zr content is not less than 20 at % and less than 70 at %, and the content of element m is more than 0 at % and not more than 15 at %, based on the total of ce, zr, and element m being 100 at %; wherein the composite oxide has caf2-type or caf2-like structure phase, wherein the ratio of an actual lattice parameter in the (311) plane to the theoretical is 1.000, and wherein the composite oxide has a property of exhibiting a total pore volume of not less than 0.30 cc/g after calcination at 1000° c.
10/16/14
20140308520
Methods for the bio-programmable crystallization of multi-component functional nanoparticle systems
The bio-programmable crystallization of multi-component functional nanoparticle systems is ascribed, as well as methods for such bio-programmable crystallization, and the products resultant from such methods. Specifically, the systems disclosed and taught herein are directed to improved strategies for the dna-mediated self-assembly of multi-component functionalized nanoparticles into three-dimensional order surperlattices, wherein the functionalization of the nanoparticles with dna is independent of either the composition of the material, or the shape of the nanoparticles..
10/16/14
20140308076
Apparatus and related methods of paving a subsurface
Disclosed may be an intermediate surface for supporting a small paver, wherein the surface can also be used to exchange heat with the pavers. In one embodiment, the apparatus may be a hextray defined by a frame with a hexagonal lattice for supporting pavers.
10/16/14
20140307804
Receiving and processing multi-latticed video
In one embodiment, a method that includes receiving plural representations of a video signal, the video signal comprising plural sequenced pictures corresponding to at least a portion of a video program, wherein two or more of the plural representations of the video signal (protvs) includes a respective sequence of latticed pictures and one or more of the other protvs includes a respective sequence of non-latticed pictures; and providing in plural successive non-overlapping segments distribution interval (sdis) compressed versions of the protvs in a single video stream, wherein each sdi consists of plural non-overlapping, consecutive segments, each of the plural non-overlapping consecutive segments originating from a respective one of the collective protvs.. .
10/16/14
20140307139
Imaging element and imaging apparatus
It is an imaging element in which pixels which are photoelectric conversion elements are placed at respective square lattice positions, in which, when, in a predetermined region where pixels of the imaging element are placed, a plurality of pairs are arranged in a first line which is any one line among lines and a second line which is parallel to the first line, each pair having pair pixels which are first and second phase difference detection pixels placed adjacent to each other to detect a phase difference among the pixels of the imaging element, the pairs in the first line are placed to be spaced apart from each other by at least two pixels, and the pairs in the second line are placed at positions, which correspond to positions where the pair pixels in the first line are spaced apart from each other.. .
10/16/14
20140306707
Use of nuclear spin impurities to suppress electronic spin fluctuations and decoherence in composite solid-state spin systems
A solid state electronic spin system contains electronic spins disposed within a solid state lattice and coupled to an electronic spin bath and a nuclear spin bath, where the electronic spin bath composed of electronic spin impurities and the nuclear spin bath composed of nuclear spin impurities. The concentration of nuclear spin impurities in the nuclear spin bath is controlled to a value chosen so as to allow the nuclear spin impurities to effect a suppression of spin fluctuations and spin decoherence caused by the electronic spin bath.
10/16/14
20140306442
Security feature having several components
The invention relates to a security feature having a luminescent component and a component camouflaging the luminescent component. The invention starts out from a security feature having a luminescent component having at least one luminophore consisting of a doped host lattice, and a component camouflaging the luminescent component, in which the camouflaging component has at least two substances, the first substance of the camouflaging component having an x-ray diffractogram which hides the x-ray diffractogram of the luminescent component, and the second substance of the camouflaging component having at least one cationic element of the luminescent component and at least one cationic element of the first substance of the camouflaging component, with the luminescent component and the first substance of the camouflaging component being formed of different cationic elements..
10/16/14
20140306320
Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters
Methods of fabricating semiconductor devices or structures include bonding a layer of semiconductor material to another material at a temperature, and subsequently changing the temperature of the layer of semiconductor material. The another material may be selected to exhibit a coefficient of thermal expansion such that, as the temperature of the layer of semiconductor material is changed, a controlled and/or selected lattice parameter is imparted to or retained in the layer of semiconductor material.
10/16/14
20140305498
Optoelectric devices comprising hybrid metamorphic buffer layers
In one aspect, semiconductor structures are described herein. A semiconductor structure, in some implementations, comprises a first semiconductor layer having a first bandgap and a first lattice constant and a second semiconductor layer having a second bandgap and a second lattice constant.
10/09/14
20140302996
Method and apparatus for enhancing vortex pinning by conformal crystal arrays
Disclosed is a method and apparatus for strongly enhancing vortex pinning by conformal crystal arrays. The conformal crystal array is constructed by a conformal transformation of a hexagonal lattice, producing a non-uniform structure with a gradient where the local six-fold coordination of the pinning sites is preserved, and with an arching effect.
10/09/14
20140302658
Transistor with improved sigma-shaped embedded stressor and method of formation
A method and structure of an embedded stressor in a semiconductor transistor device having a sigma-shaped channel sidewall and a vertical isolation sidewall. The embedded stressor structure is made by a first etch to form a recess in a substrate having a gate and first and second spacers.
10/09/14
20140302261
Flexural digital material construction and transduction
Flexural digital materials are discrete parts that can be assembled into a lattice structure to produce an actuatable structure capable of coordinated reversible spatially-distributed deformation. The structure comprises a set of discrete flexural digital material units assembled according to a lattice geometry, with a majority of the discrete units being connected, or adapted to be connected, to at least two other units according to the geometry.
10/09/14
20140300211
Discrete motion system
Discrete motion systems move relative to a lattice, using bistable mechanisms to snap between lattice locations. A discrete motion system includes a lattice having a regular configuration of attachment points, one or more motion modules that move across the lattice in discrete increments, and controllers that direct the modules.
10/09/14
20140300110
Wave energy gathering and enhancing device
The present disclosure provides a wave energy gathering and enhancing device disposed in a setting area of the sea-bed. A seawater wave approaches the wave energy gathering and enhancing device with a wave vector.
10/09/14
20140299885
Substrate structures and semiconductor devices employing the same
A substrate structure includes a substrate, a nucleation layer on the substrate and including a group iii-v compound semiconductor material having a lattice constant that is different from that of the substrate by less than 1%, and a buffer layer on the nucleation layer and including first and second layers, wherein the first and second layers include group iii-v compound semiconductor materials having lattice constants that are greater than that of the nucleation layer by 4% or more.. .
10/09/14
20140299511
Modified y-type zeolite and preparation process and use thereof
Wherein m200° c., m500° c. And m800° c.
10/09/14
20140299074
Boiler with flat horizontal tubes
The present invention relates to a boiler having horizontally arranged flat rectangular water tubes comprising: a water chamber; an inner water chamber to be connected with horizontal water tubes, said horizontally arranged water tubes forming multi-step water tube groups; induction plates provided in the inner water chamber blocking the water path of the horizontal water tubes alternatingly in such a manner as to bend the water path in a zigzag manner; an exhaust gas discharge conduit in straight lattice lines formed by narrow gaps between the horizontal water tubes; and an exhaust gas discharge chamber formed in an upper water chamber. The flat horizontally arranged rectangular water tubes are narrow in their width, making it possible to arrange them densely in the limited space of the combustion chamber, and with their increased heat receiving areas, the water tubes can heat the water in the boiler fast..
10/09/14
20140298733
Roof structure for a vehicle
There is provided a roof for a vehicle where each one of its right and left side wall has at least a first and a second door opening. The roof structure comprises a lattice structure and an outer shell.
10/02/14
20140294297
Image processing for forming realistic stratum detritus detail in a camouflage pattern and a camouflage pattern formed thereby
An image processing method forming realistic stratum detritus detail in a camouflage pattern comprises the steps of: identifying the desired camouflage genre; forming a base image layer with a shallow depth of field which includes a foreground focal element extending substantially across the width of the pattern; forming a lattice work image layer including a lattice work of appropriate natural elements; overlaying the lattice work image layer onto the base image layer; and blending the detritus images into the natural elements of the lattice work. Camouflage patterns formed according to the disclosed process are also disclosed which form a more effective hunter camouflage pattern..
10/02/14
20140291616
Compound tunneling field effect transistor integrated on silicon substrate and method for fabricating the same
Compound tunneling field effect transistors integrated on a silicon substrate are provided with increased tunneling efficiency and an abrupt band slope by forming a source region with a material having a bandgap at least 0.4 electron volts (ev) narrower than that of silicon to increase a driving current (on current) by forming a channel region with a material having almost no difference in lattice constant from a source region and having a high electron mobility at least 5 times higher than silicon. On/off current ratio simultaneously is increased by forming a drain region with a material having a bandgap at least as wide as a channel region material to restrain off current.
09/25/14
20140287226
Ingot, silicon carbide substrate, and method for producing ingot
There is obtained an ingot in which generation of crack is suppressed. The ingot includes: a seed substrate formed of silicon carbide; and a silicon carbide layer grown on the seed substrate.
09/25/14
20140287192
Honeycomb structural body
A honeycomb structural body has cells surrounded by cell walls arranged in a lattice-like shape. A cross section is divided into a central section and an outer peripheral section.
09/25/14
20140284614
Methods for epitaxial devices
Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate.
09/25/14
20140284550
Light-emitting device
A light-emitting device including a gan-based semiconductor has a structure in which sequentially deposited are an n-type semiconductor layer, a superlattice structure layer including at least one ingan superlattice layer, an active layer, an algan-based semiconductor layer, and a p-type semiconductor layer. A concavo-convex structure is formed on the interface of the algan-based semiconductor layer with the p-type semiconductor layer.
09/25/14
20140283754
Fish farming plant, module, method and use
The present invention relates to a fish fanning plant adapted for floating in free water. The plant comprises a substantially vertical inlet pipe and a corresponding outlet pipe for taking in and discharging water, respectively, at a water depth having the desired water quality at a depth (h).
09/25/14
20140283531
Cryopump and method for vacuum pumping non-condensable gas
A cryopump includes: a radiation shield that includes a shield front end that defines a shield opening, a shield bottom portion, and a shield side portion that extends between the shield front end and the shield bottom portion; and a cryopanel assembly that is cooled to a lower temperature than that of the radiation shield. The cryopanel assembly includes a first panel arrangement including a plurality of first adsorption panels and a plurality of second panel arrangements each including a plurality of second adsorption panels.
09/18/14
20140278390
Classifier-based system combination for spoken term detection
Systems and methods for processing a query include determining a plurality of sets of match candidates for a query using a processor, each of the plurality of sets of match candidates being independently determined from a plurality of diverse word lattice generation components of different type. The plurality of sets of match candidates is merged by generating a first score for each match candidate to provide a merged set of match candidates.
09/18/14
20140277505
Spinal implants with bioactive glass markers
The present invention relates to orthopedic implants. More specifically, the present invention is a series of orthopedic implants constructed from biocompatible material, each including a plurality of markers constructed from bioactive glass material, some of which are radio-opaque.
09/18/14
20140274459
Method and system of manufacturing a golf club, and a manufactured golf club head
A golf club head for playing golf made by a method including providing a powdered metal, and applying a controlled source of energy to the powdered metal layer by layer to form a golf club head, wherein the golf club head is a hollow golf club head having a supporting lattice formed within the hollow golf club head.. .
09/18/14
20140273285
Memory array with self-aligned epitaxially grown memory elements and annular fet
A system and method for fabricating a memory array device. An example memory array device includes a plurality of memory cells, each including a fet over a substrate and a memory element over the fet.
09/18/14
20140273247
Methods for monitoring changes in the core of lipoprotein particles in metabolism and disease
A method is disclosed for measuring the properties of protein and lipoprotein elements in a sample. The method includes the of placing a small volume of a sample into a nmr instrument tuned to measure a particular nucleus, applying a series of radiofrequency pulses with intermittent delays in order to measure spin-spin and/or spin-lattice relaxation time constants from the time-domain decay of the signal, without the use of chemical shifts and without converting data into the frequency domain by fourier transform or other means, at least partially suppressing the water signal prior to the beginning of a sequence used to record relaxation time constants in the time domain, optionally utilizing relaxation contrast agents or other chemical additives to perturb the solvent water or other elements of the sample, analyzing the exponentially decaying nmr signal in the time domain using multi-exponential analysis, and comparing differences in the relaxation time constants for lipoprotein- or protein-specific elements within a single human subject, or between subjects, to assess normal and abnormal metabolism reflective of increased disease risk or active disease..
09/18/14
20140272335
Low-e glazing performance by seed structure optimization
A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability.
09/18/14
20140271436
Rare earth oxyorthosilicate scintillation crystals
The use of the effect of crystallographic axis orientation on the effectiveness in annealing in multiple atmospheres and chemical compositions of lutetium oxyorthosilicate crystals and other scintillator crystals is disclosed. By controlling axis orientation an favorable annealing condition can be selected to repair both internal interstitial and vacancy defects through the crystal lattice.
09/18/14
20140271388
Formation and stability of cu-mn spinel phase for zpgm catalyst systems
Optimized cu—mn spinel compositions, with optimal spinel phase formation and phase stability properties, for a plurality of zpgm catalysts in underfloor and closed-loop coupled catalyst applications are disclosed. Plurality of cu—mn spinel compositions are prepared with variations of molar ratios.
09/18/14
20140270666
Hollow core fiber with polarization dependent loss
A hollow core fiber having polarization dependent loss is provided. The hollow core fiber embedded in a cellular cladding having a plurality of cells arranged in a nominally regular cellular lattice.
09/18/14
20140265734
Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing
A textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.. .
09/18/14
20140264847
Semiconductor device
A semiconductor device includes a plurality of electrodes disposed on a surface in a first column and a second column parallel to the first and separated by a first distance. The adjacent electrodes in the first column are spaced from each other by at least a second distance.
09/18/14
20140264763
Engineered substrates for semiconductor epitaxy and methods of fabricating the same
In a method for fabricating an engineered substrate for semiconductor epitaxy, an array of seed structures is assembled on a surface of the substrate. The seed structures in the array have substantially similar directional orientations of their crystal lattices, and are spatially separated from each other.
09/18/14
20140264747
Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
A dielectric layer can achieve a crystallography orientation similar to a base dielectric layer with a conductive layer disposed between the two dielectric layers. By providing a conductive layer having similar crystal structure and lattice parameters with the base dielectric layer, the crystallography orientation can be carried from the base dielectric layer, across the conductive layer to affect the dielectric layer.
09/18/14
20140264510
Memory array with self-aligned epitaxially grown memory elements and annular fet
A system and method for fabricating a memory array device. An example memory array device includes a plurality of memory cells, each including a fet over a substrate and a memory element over the fet.
09/18/14
20140264445
Source/drain structure of semiconductor device
The disclosure relates to a semiconductor device. An exemplary structure for a field effect transistor comprises a substrate comprising a major surface and a cavity below the major surface; a gate stack on the major surface of the substrate; a spacer adjoining one side of the gate stack; a shallow trench isolations (sti) region disposed on the side of the gate stack, wherein the sti region is within the substrate; and a source/drain (s/d) structure distributed between the gate stack and sti region, wherein the s/d structure comprises a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; and a s/d extension disposed between the substrate and strained material, wherein the s/d extension comprises a portion extending below the spacer and substantially vertical to the major surface..
09/18/14
20140264438
Heterostructures for semiconductor devices and methods of forming the same
Various heterostructures and methods of forming heterostructures are disclosed. A structure includes a substrate, a template layer, a barrier layer, and a device layer.
09/18/14
20140264375
Lattice mismatched heterojunction structures and devices made therefrom
Semiconductor heterojunction structures comprising lattice mismatched, single-crystalline semiconductor materials and methods of fabricating the heterojunction structures are provided. The heterojunction structures comprise at least one three-layer junction comprising two layers of single-crystalline semiconductor and a current tunneling layer sandwiched between and separating the two layers of single-crystalline semiconductor material.
09/18/14
20140264283
Frequency arrangement for surface code on a superconducting lattice
A device lattice arrangement including a plurality of devices, a plurality of physical connections for the plurality of devices, wherein each of the plurality of devices are coupled to at least two of the plurality of physical connections, a plurality of identity labels associated with individual devices of the plurality of devices and an arrangement of identity labels such that pairs of devices of the plurality of devices connected by some number of the plurality of connections have different identity labels.. .
09/18/14
20140264278
Strained ingaas quantum wells for complementary transistors
An ingaas n-channel quantum well heterostructure for use in a complementary transistor having a sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials..
09/18/14
20140264274
Semiconductor device
To improve performance of a semiconductor device. For example, on the assumption that a superlattice layer is inserted between a buffer layer and a channel layer, a concentration of acceptors introduced into nitride semiconductor layers forming a part of the superlattice layer is higher than a concentration of acceptors introduced into nitride semiconductor layers forming the other part of the superlattice layer.
09/18/14
20140264273
Superlattice crenelated gate field effect transistor
The present invention is directed to a device comprising an epitaxial structure comprising a superlattice structure having an uppermost 2dxg channel, a lowermost 2dxg channel and at least one intermediate 2dxg channel located between the uppermost and lowermost 2dxg channels, source and drain electrodes operatively connected to each of the 2dxg channels, and a plurality of trenches located between the source and drain electrodes. Each trench has length, width and depth dimensions defining a first sidewall, a second sidewall and a bottom located therebetween, the bottom of each trench being at or below the lowermost 2dxg channel.
09/18/14
20140264272
Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
A photonic device comprises a substrate and a dielectric material including two or more openings that expose a portion of the substrate, the two or more openings each having an aspect ratio of at least 1. A bottom diode material comprising a compound semiconductor material that is lattice mismatched to the substrate occupies the two or more openings and is coalesced above the two or more openings to form the bottom diode region.
09/18/14
20140264145
Nanoferrite flakes
A ferrite layer having a columnar structure is formed, and ferrite flakes are separated from the ferrite layer. The ferrite flakes include a metal oxide having a spinel cubic crystal structure with a stoichiometry represented by ab2o4, where a and b represent different lattice sites occupied by cationic species, and o represents oxygen in its own sublattice..


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Lattice topics: Semiconductor, Semiconductor Device, Semiconductor Material, Crystallin, Disconnect, Transistors, Replacement Gate, Semiconductor Devices, Dislocations, Dislocation, Image Processing, Coordinates, Surface Plasmon Polariton, Antenna Array

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