|| List of recent Lattice-related patents
| Engine control device|
A plurality of lattice points arranged in a three-dimensional cartesian coordinate system that takes first, second and third operating conditions as axes are associated in a one-to-one relationship with at least some of a plurality of cores arranged in a lattice shape in a multi-core processor, and a calculation program for calculating a control value at the associated lattice points is allocated to the cores. Each core with which a lattice point is associated is configured so that, in a case where an operation space on the three-dimensional cartesian coordinate system to which a current operating point belongs is a space defined by eight adjacent lattice points including a lattice point associated with the relevant core, the relevant core calculates a control value at the lattice point associated therewith by means of the calculation program and sends the control value to an interpolation calculation core, and if the operation space is not defined by the eight adjacent lattice points, the relevant core suspends calculation of the control value.
| Expandable occlusion device and methods|
An occlusion device and method for occluding an undesirable passage through tissue, such as a septal defect, that provides an expandable cylinder or other structure that occludes the passage internally or by covering one or more openings to the passage. The occlusion device includes a wire lattice or mesh that expands from a contracted catheter-deliverable state to an expanded state that occludes the passage.
| Carrier for ethylene oxide catalysts|
A carrier for an ethylene epoxidation catalyst is provided that includes an alumina first component and a mixed metal oxide of alumina second component. The mixed metal oxide of alumina second component comprises a corundum lattice structure having a plurality of o—al—o bonds, wherein an al atom of at least one o—al—o bond of the plurality of o—al—o bonds, but not all of the plurality of o—al—o bonds, is replaced with a divalent or trivalent transition metal selected from the group consisting of scandium (sc), titanium (ti), vanadium (v), chromium (cr), manganese (mn), iron (fe), cobalt (co), nickel (ni) copper (cu), and zinc (zn).
| Defect reduction using aspect ratio trapping|
Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls..
| Method of strain and defect control in thin semiconductor films|
A method of managing strain and preventing defect formation in semiconductor materials is described. In structures featuring two or more semiconductor materials with different lattice constants, buffer layers may be used to form deposition surfaces that result in defect-free semiconductor devices.
| Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells|
A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell, the graded interlayer having a third band gap greater than the second band gap; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; and forming a contact composed of a sequence of layers over the first subcell at a temperature of 280° c. Or less and having a contact resistance of less than 5×10−4 ohms-cm2..
| Light emitting diode (led) component comprising a phosphor with improved excitation properties|
A light emitting diode (led) component comprises an led having a dominant wavelength in a range of from about 425 nm to less than 460 nm and a phosphor in optical communication with the led. The phosphor includes a host lattice comprising yttrium aluminum garnet (yag), and may include an activator comprising ce and a substitutional dopant comprising ga incorporated in the host lattice.
| Integrated multi-color light emitting device made with hybrid crystal structure|
An integrated hybrid crystal light emitting diode (“led”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite iii-nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended iii-v or ii-vi compound semiconductor on the opposite side of c-plane sapphire media.
| Virtual substrates by having thick, highly relaxed metamorphic buffer layer structures by hydride vapor phase epitaxy|
Virtual substrates made by hydride vapor phase epitaxy are provided comprising a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (mbl) structure comprising one or more layers of a semiconductor alloy on the growth substrate. The mbl structure is compositionally graded such that its lattice constant transitions from a lattice constant at the interface with the growth substrate that is substantially the same as the lattice constant of the growth substrate to a lattice constant at a surface opposite the interface that is different from the lattice constant of the growth substrate.
| Low-resistivity p-type gasb quantum wells for low-power electronic devices|
A semiconductor device including a heterostructure having at least one low-resistivity p-type gasb quantum well is provided. The heterostructure includes a layer of inwal1−was on a semi-insulating (100) inp substrate, where the inwal1−was is lattice matched to inp, followed by an alasxsb1−x buffer layer on the inwal1−was layer, an alasxsb1−x spacer layer on the buffer layer, a gasb quantum well layer on the spacer layer, an alasxsb1−x barrier layer on the quantum well layer, an inyal1−ysb layer on the barrier layer, and an inas cap.
| Telescopic boom and crane|
A telescopic boom for a crane has at least two telescopable telescoping sections in the form of lattice pieces, each of which exhibits a hollow structure that has in essence the shape of a box. The bottom chords of adjacent sections have in each instance a pinning structure to provide for pinning to each other during normal crane operations.
| Slide-glide privacy blind barrier system|
A convertible slide-glide panel privacy (or blind barrier section) system is provided for deck railings or fences. The system may consist of identical panel sections.
|Synthesis of olefins from oxygen-free direct conversion of methane and catalysts thereof|
The present invention is related to the preparation of a metal lattice-doping catalyst in an amorphous molten state, and the process of catalyzing methane to make olefins, aromatics, and hydrogen using the catalyst under oxygen-free, continuous flowing conditions. Such a process has little coke deposition and realizes atom-economic conversion.
|Negative-electrode material for rechargeable batteries with nonaqueous electrolyte, and process for producing the same|
There is provided a negative-electrode material for rechargeable batteries with a nonaqueous electrolyte which have a high charge/discharge capacity and excellent rate characteristics. The negative-electrode material for rechargeable batteries with a nonaqueous electrolyte comprises: carbon material having a carbon atom content of not less than 98.0% in terms of mass and a lattice spacing (d002) of not more than 3.370 angstroms in the c-axis direction; and a boron compound represented by general formula hxboy wherein x represents a real number of 0 to 1.0; and y represents a real number of 1.5 to 3.0, wherein the boron compound is bonded to a portion of the carbon atoms of the carbon material..
|Quadrature lattice matching network|
Embodiments include but are not limited to apparatuses and systems including a quadrature lattice matching network including first path having a series inductor and a shunt inductor, and a second path having a series capacitor and a shunt capacitor. Other embodiments may be described and claimed..
|Direct graphene growth on metal oxides by molecular epitaxy|
Direct growth of graphene on co3o4(111) at 1000 k was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic sp2 carbon lineshape, at average carbon coverages from 0.4-3 monolayers.
|Semiconductor device and method of manufacturing the same|
A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate and including aluminum nitride (aln), and a semiconductor device layer disposed on the initial buffer layer and including a semiconductor compound. There is no sin between the initial buffer layer and the silicon substrate, and a silicon lattice of the silicon substrate directly contacts a lattice of the initial buffer layer..
|Low-bandgap, monolithic, multi-bandgap, optoelectronic devices|
Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including pv converters, photodetectors, and led's, have lattice-matched (lm), double-heterostructure (dh), low-bandgap gainas(p) subcells (22, 24) including those that are lattice-mismatched (lmm) to inp, grown on an inp substrate (26) by use of at least one graded lattice constant transition layer (20) of inasp positioned somewhere between the inp substrate (26) and the lmm subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (mims) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments..
|Nitride semiconductor light-emitting device and method of manufacturing the same|
A nitride semiconductor light-emitting device is formed of an n-type nitride semiconductor layer, a trigger layer, a v-pit expanding layer, a light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The light-emitting layer has a v-pit formed therein.
|Diode barrier infrared detector devices and superlattice barrier structures|
Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a barrier layer adjacent to the absorber layer, and a second contact layer adjacent to the barrier layer.
|Optically transparent electrode|
Provided is an optically transparent electrode of which the visibility of the electrode pattern is low. The optically transparent electrode is produced by joining two optically transparent conductive materials each having, on one side of the optically transparent base material, a large lattice 11 formed of a grid-like conductive part and a connector 12 which has at least one connector lattice 16 and which electrically connects adjacent large lattices 11, and is characterized by that the two optically transparent conductive materials are overlapped so that the centers of the connectors 12 thereof approximately coincide, and by that at least one of the two optically transparent conductive materials has a broken lattice 31 where a part of a thin line is broken and electrical conductivity is lost at a position corresponding to the overlapped connectors 12 and/or to a portion surrounded by the large lattice 11 and the connector 12..
|Control of low energy nuclear reaction hydrides, and autonomously controlled heat|
A treatment of a possibly powdered, sintered, or deposited lattice (e.g., nickel) for heat generating applications and a way to control low energy nuclear reactions (“lenr”) hosted in the lattice by controlling hydride formation. The method of control and treatment involves the use of the reaction lattice, enclosed by an inert cover gas such as argon that carries hydrogen as the reactive gas in a non-flammable mixture.
|Bolt connection assembly for a wind turbine lattice tower structure|
A bolt connection assembly is provided that is particularly well-suited for connecting structural members of a lattice tower structure for a wind turbine. The bolt connection assembly includes a bolt component having a head and a shaft and a structural bore component having a bore defined therethrough for receipt of the bolt component.
|Image processing apparatus and control method therefor|
An image processing apparatus according to the present invention comprises a generation unit configured to generate a lookup table having a specific number of lattice points for converting input image data into display image data having a different gradation characteristic by using a predetermined expression and a conversion unit configured to convert the input image data into the display image data by using the lookup table generated by the generation unit. The generation unit determines positions of the specific number of lattice points in accordance with a dynamic range of the input image data..
|Light emitting diode chip and manufacturing method thereof|
A light emitting diode (led) chip includes an n-type semiconductor layer, a compensation layer arranged on the n-type semiconductor layer, an active layer arranged on the compensation layer; and a p-type semiconductor layer arranged on the active layer. During growth of the compensation layer, atoms of an element (i.e., al) of the compensation layer move to fill epitaxial defects in the n-type semiconductor layer, wherein the epitaxial defects are formed due to lattice mismatch when growing the n-type semiconductor.
|Semiconductor layer sequence, optoelectronic semiconductor chip and method for producing a semiconductor layer sequence|
In at least one embodiment, the semiconductor layer sequence (1) is provided for an optoelectronic semiconductor chip (10). The semiconductor layer sequence (1) contains at least three quantum wells (2) which are arranged to generate electromagnetic radiation.
|Particulate compositions having plural responses to excitation radiation|
A particulate composition comprises a plurality of particles wherein at least one of the particles comprises at least two different crystalline and/or glass phases, each phase comprising a host lattice and a dopant sensitive to electromagnetic radiation. The different phases simultaneously produce different responses on exposure to photons of the same energy, whereby the output from the particulate composition when exposed to said photons is the sum of the responses from the different phases..
An solar cell of the present invention includes a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer interposed between the p-type semiconductor layer and the n-type semiconductor layer, in which the superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum dot layers each including a plurality of quantum dots are stacked alternately and repeatedly, the superlattice semiconductor layer contains an n-type dopant and has at least two intermediate energy levels at which electrons photoexcited from the valence band of the quantum dots or the barrier layers can be present for a certain period of time, each of the intermediate energy levels is located between the top of the valence band of the barrier layers and the bottom of the conduction band of the barrier layers, each of the intermediate energy levels is formed from one or a plurality of quantum levels of the quantum dots, and the superlattice semiconductor layer contains an activated n-type dopant.. .
|Multijunction photovoltaic device having sige(sn) and (in)gaasnbi cells|
A multijunction tandem photovoltaic device is disclosed having a bottom subcell of silicon germanium or silicon germanium tin material and above that a subcell of gallium nitride arsenide bismide, or indium gallium nitride arsenide bismide, material. The materials are lattice matched to gallium arsenide, which preferably forms the substrate.
|Solar cell with an intermediate band comprising non-stressed quantum dots|
An intermediate band solar cell is provided. The intermediate band material of the intermediate band solar cell consists of a collection of quantum dots of a semiconductor material that are immersed in a volume of a second semiconductor material.
|Medical implants with enhanced osseointegration|
Medical implants with non-equilibrium surface structures are disclosed. The surface treatment of the implants greatly enhances osseointegration, reduces time to recovery following implant surgery, reduces surgery-related infections, and improves outcomes.
|Nanocomposite and method of making thereof|
An embodiment of an inorganic nanocomposite includes a nanoparticle phase and a matrix phase. The nanoparticle phase includes nanoparticles that are arranged in a repeating structure.
|High performance stress-enhanced mosfets using si:c and sige epitaxial source/drain and method of manufacture|
Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a stressing layer on a substrate.
|Lattice keyboards with related devices|
An electronic device may include a processor, a memory coupled to the processor, and a touch-enabled display coupled to the processor. The processor may be for generating a lattice of nodes of a circular packing being based upon a connected transformation of a square circular packing.
|R-t-b based permanent magnet|
The present invention provides a permanent magnet whose magnetic properties will not be significantly decreased and which is excellent in the temperature properties compared to the existing r-t-b based permanent magnet. In the r-t-b based structure, a stacked structure of r1-t-b based crystallizing layer and (y, la)-t-b based crystallizing layer can be formed by alternatively stacking r1-t-b and (y, la)-t-b.
|R-t-b based permanent magnet|
The present invention provides a permanent magnet whose magnetic properties will not be significantly decreased and which is excellent in the temperature properties compared to the existing r-t-b based permanent magnet. In the r-t-b based structure, a stack structure of r1-t-b based crystallizing layer and (y,ce)-t-b based crystallizing layer can be formed by alternatively stacking r1-t-b and (y,ce)-t-b.
|Security feature having several components|
The invention relates to a security feature having a luminescent component and a component camouflaging the luminescent component. The invention starts out from a security feature having a luminescent component having at least one luminophore consisting of at least one doped host lattice, and a component camouflaging the luminescent component, wherein the camouflaging component has chemical elements that have similar structure-chemical properties to the chemical elements of the luminescent component, wherein the chemical elements of the camouflaging component and the chemical elements of the luminescent component are formed by different chemical elements..
|Nitride semiconductor light emitting device|
The present invention discloses a nitride semiconductor light emitting device with improved light efficiency. The nitride semiconductor light emitting device includes a n-type nitride layer and p-type nitride layer, an active layer disposed between the n-type and p-type nitride layers and with a multiple quantum well structure wherein a plurality of quantum well layers and a plurality of quantum barrier layers are stacked alternatively in the active layer, and a superlattice layer between the active layer and the p-type nitride layer with asymmetric structure.
|Wavelength-shift composite light-storing powder and method of manufacturing and applying the same|
A wavelength-shift composite light-storing powder and method of manufacturing and applying the same. Wherein, inorganic metal oxide and light-storing material containing rare earth elements are made to collide at high speed in an environment of extremely low temperature.
|Electrolytic copper foil and production method of electrolytic copper foil|
The present invention provides an electrolytic copper foil that has a high normal tensile strength, a low decrease in tensile strength after a thermal history, and a low concentration of impurities in the copper foil and a method for producing the copper foil. Specifically, the electrolytic copper foil in which a sulfur concentration of the copper foil is not less than 10 ppm by mass but no more than 50 ppm by mass, wherein when lattices with a spacing of 10 nm in a stem image observed with a scanning transmission electron microscope at a magnification of 1 million times are formed and intersections of each lattice are used as a measurement point for determining a sulfur concentration, there is a measurement point at which the sulfur concentration is higher as compared to the sulfur concentration of the copper foil..
|Prefabricated wall frame for construction and ceiling frame using same|
Provided is a structure of a prefabricated wall frame for construction and a ceiling frame. The prefabricated wall frame for construction includes a wall main frame, interior and exterior panels, and panel spacing bars.
|Stand-up paddle board and method of manufacture|
A stand-up paddle board is formed by a core surrounded by a skin. The core is manufactured by creating an upper core member mold and a lower core member mold, corresponding to the top and bottom of the core.
|Method of fabricating a three-dimensional (3d) porous electrode architecture for a microbattery|
A method of fabricating a 3d porous electrode architecture comprises forming a microbattery template that includes (a) a lattice structure comprising a first lattice portion separated from a second lattice portion on a substrate, and (b) a solid structure on the substrate including a separating portion between the first and second lattice portions. Interstices of the first lattice portion are infiltrated with a first conductive material and interstices of the second lattice portion are infiltrated with a second conductive material.
|Scattered pilot pattern and channel estimation method for mimo-ofdm systems|
A method and apparatus are provided for reducing the number of pilot symbols within a mimo-ofdm communication system, and for improving channel estimation within such a system. For each transmitting antenna in an ofdm transmitter, pilot symbols are encoded so as to be unique to the transmitting antenna.
|Video wall and fixing apparatus therefor|
Disclosed is a fixing apparatus for a video wall to fix a plurality of display panels disposed in a lattice pattern, including a plurality of top case units each positioned between neighboring ones of the display panels, each of the top case units comprising a middle frame inserted between the neighboring ones of the display panels to extend to rear surfaces of the display panels, and a bezel frame extending from the middle frame to opposite sides in a perpendicular direction to the middle frame to cover ends of front surfaces of neighboring display panels, and a fastening member fastened to the middle frame extending to the rear surfaces of the display panels to fix the display panels. In the fixing apparatus, neighboring display panels share one top case, and thus the gap between the display panels for a video wall may be reduced..
|Semiconductor structures, devices and engineered substrates including layers of semiconductor material having reduced lattice strain|
Methods of fabricating semiconductor devices or structures include forming structures of a semiconductor material overlying a layer of a compliant material, subsequently changing the viscosity of the compliant material to relax the semiconductor material structures, and utilizing the relaxed semiconductor material structures as a seed layer in forming a continuous layer of relaxed semiconductor material. In some embodiments, the layer of semiconductor material may comprise a iii-v type semiconductor material, such as, for example, indium gallium nitride.
An optoelectronic device comprising a first semiconductor layer having a first lattice constant; a second semiconductor layer having a second lattice constant, wherein the second lattice constant is smaller than the first lattice constant; and a first buffer layer formed between the first semiconductor layer and the second semiconductor layer, wherein a lattice constant of one side of the first buffer layer near the second semiconductor layer is smaller than the second lattice constant.. .
|Light receiving element, semiconductor epitaxial wafer, detecting device, and method for manufacturing light receiving element|
Provided are a light receiving element etc. Which have a high responsivity over the near- to mid-infrared region and stably have a high quality while maintaining the economical efficiency.
|Production of a semiconductor device having at least one column-shaped or wall-shaped semiconductor element|
Described is a method for producing a semiconductor device (100), in which at least one column-shaped or wall-shaped semiconductor device (10, 20) extending in a main direction (z) is formed on a substrate (30), wherein at least two sections (11, 13, 21, 23) of a first crystal type and one section (12, 22) of a second crystal type therebetween are formed in an active region (40), each section with a respective predetermined height (h1, h2), wherein the first and second crystal types have different lattice constants and each of the sections of the first crystal type has a lattice strain which depends on the lattice constants in the section of the second crystal type. According to the invention, at least a height (h2) of the section (12, 22) of the second crystal type and a lateral thickness (d) of the active region (40) is formed perpendicular to the main direction, in such a manner that the lattice strain in one of the sections (11) of the first crystal type also depends on the lattice constants in the other section (13) of the first crystal type.
|Refrigeration from graphene-based nanoemitters|
This disclosure presents the use of electrons as the ‘working fluid’ in conjunction with a solid nanomaterial that hinders electron coupling to the atomic lattice of the nanomaterial, i.e., they are out of equilibrium. The electrons can achieve very high effective temperatures with minimal heating of the solid lattice.
Provided is a composite oxide which is suitable as a co-catalyst for an exhaust gas purifying catalyst or the like, has high heat resistance, and has an excellent oxygen absorbing and desorbing capability at low temperatures. The composite oxide contains ce and zr, wherein the ce content is 30 to 80 at % and the zr content is 20 to 70 at %, based on the total of ce and zr being 100 at %, or further contains particular element m, wherein the ce content is not less than 30 at % and less than 80 at %, the zr content is not less than 20 at % and less than 70 at %, and the content of element m is more than 0 at % and not more than 15 at %, based on the total of ce, zr, and element m being 100 at %; wherein the composite oxide has caf2-type or caf2-like structure phase, wherein the ratio of an actual lattice parameter in the (311) plane to the theoretical is 1.000, and wherein the composite oxide has a property of exhibiting a total pore volume of not less than 0.30 cc/g after calcination at 1000° c.
|Methods for the bio-programmable crystallization of multi-component functional nanoparticle systems|
The bio-programmable crystallization of multi-component functional nanoparticle systems is ascribed, as well as methods for such bio-programmable crystallization, and the products resultant from such methods. Specifically, the systems disclosed and taught herein are directed to improved strategies for the dna-mediated self-assembly of multi-component functionalized nanoparticles into three-dimensional order surperlattices, wherein the functionalization of the nanoparticles with dna is independent of either the composition of the material, or the shape of the nanoparticles..
|Apparatus and related methods of paving a subsurface|
Disclosed may be an intermediate surface for supporting a small paver, wherein the surface can also be used to exchange heat with the pavers. In one embodiment, the apparatus may be a hextray defined by a frame with a hexagonal lattice for supporting pavers.
|Receiving and processing multi-latticed video|
In one embodiment, a method that includes receiving plural representations of a video signal, the video signal comprising plural sequenced pictures corresponding to at least a portion of a video program, wherein two or more of the plural representations of the video signal (protvs) includes a respective sequence of latticed pictures and one or more of the other protvs includes a respective sequence of non-latticed pictures; and providing in plural successive non-overlapping segments distribution interval (sdis) compressed versions of the protvs in a single video stream, wherein each sdi consists of plural non-overlapping, consecutive segments, each of the plural non-overlapping consecutive segments originating from a respective one of the collective protvs.. .
|Imaging element and imaging apparatus|
It is an imaging element in which pixels which are photoelectric conversion elements are placed at respective square lattice positions, in which, when, in a predetermined region where pixels of the imaging element are placed, a plurality of pairs are arranged in a first line which is any one line among lines and a second line which is parallel to the first line, each pair having pair pixels which are first and second phase difference detection pixels placed adjacent to each other to detect a phase difference among the pixels of the imaging element, the pairs in the first line are placed to be spaced apart from each other by at least two pixels, and the pairs in the second line are placed at positions, which correspond to positions where the pair pixels in the first line are spaced apart from each other.. .
|Use of nuclear spin impurities to suppress electronic spin fluctuations and decoherence in composite solid-state spin systems|
A solid state electronic spin system contains electronic spins disposed within a solid state lattice and coupled to an electronic spin bath and a nuclear spin bath, where the electronic spin bath composed of electronic spin impurities and the nuclear spin bath composed of nuclear spin impurities. The concentration of nuclear spin impurities in the nuclear spin bath is controlled to a value chosen so as to allow the nuclear spin impurities to effect a suppression of spin fluctuations and spin decoherence caused by the electronic spin bath.
|Security feature having several components|
The invention relates to a security feature having a luminescent component and a component camouflaging the luminescent component. The invention starts out from a security feature having a luminescent component having at least one luminophore consisting of a doped host lattice, and a component camouflaging the luminescent component, in which the camouflaging component has at least two substances, the first substance of the camouflaging component having an x-ray diffractogram which hides the x-ray diffractogram of the luminescent component, and the second substance of the camouflaging component having at least one cationic element of the luminescent component and at least one cationic element of the first substance of the camouflaging component, with the luminescent component and the first substance of the camouflaging component being formed of different cationic elements..
|Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters|
Methods of fabricating semiconductor devices or structures include bonding a layer of semiconductor material to another material at a temperature, and subsequently changing the temperature of the layer of semiconductor material. The another material may be selected to exhibit a coefficient of thermal expansion such that, as the temperature of the layer of semiconductor material is changed, a controlled and/or selected lattice parameter is imparted to or retained in the layer of semiconductor material.
|Optoelectric devices comprising hybrid metamorphic buffer layers|
In one aspect, semiconductor structures are described herein. A semiconductor structure, in some implementations, comprises a first semiconductor layer having a first bandgap and a first lattice constant and a second semiconductor layer having a second bandgap and a second lattice constant.