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Lattice patents



      

This page is updated frequently with new Lattice-related patent applications.




Date/App# patent app List of recent Lattice-related patents
02/04/16
20160037258 
 Phase independent surround speaker patent thumbnailnew patent Phase independent surround speaker
A speaker is disclosed that can be positioned as either a right or left front surround or a right or left rear surround in any surround sound system. The speaker includes a housing including a first driver, a second driver, a third driver, and a fourth driver.
Klipsch Group, Inc.


02/04/16
20160037104 
 Image sensor and image pick-up apparatus including the same patent thumbnailnew patent Image sensor and image pick-up apparatus including the same
An image sensor and an image pick-up apparatus including the same are provided. The image sensor includes a plurality of phase difference detection pixels and a plurality of image detection pixels arranged in a lattice pattern together with the phase difference detection pixels, wherein the phase difference detection pixels are arranged at an interval of a predetermined number of pixels in the lattice pattern, and the predetermined number of pixels has a maximum value of 16.
Lg Innotek Co., Ltd.


02/04/16
20160037103 
 Image sensor and image pick-up apparatus including the same patent thumbnailnew patent Image sensor and image pick-up apparatus including the same
An image sensor includes phase difference detection pixels including first group pixels each having a first shield region deviated at one side and second group pixels each having a second shield region deviated at the other side, and image detection pixels arranged in a lattice pattern together with the phase difference detection pixels. The phase difference detection pixels include a first pixel group configured such that an area of the first shield region is equal to that of the second shield region, a second pixel group configured such that the area of the first shield region is equal to or greater than that of the second shield region, and a third pixel group configured such that the area of the first shield region is equal to or less than that of the second shield region..
Lg Innotek Co., Ltd.


02/04/16
20160035965 
 Pzt-based piezoelectric ceramic material and piezoelectric device using the same patent thumbnailnew patent Pzt-based piezoelectric ceramic material and piezoelectric device using the same
Embodiments of the invention provide a pzt-based piezoelectric ceramic material represented by the following formula: pbx(zrytiz)m1-y-zo3, which is an abo3 perovskite crystal material including a crystal lattice a-site and a crystal lattice b-site, x, y, and z satisfying the following equations, respectively: 0.830≦x≦0.964, 0.43≦y≦0.55, and 0.43≦z≦0.55, and m being a metal element having a valence of +5 or +6, and a piezoelectric device using the same. According to at least one embodiment, since pb is not excessively added, a pb or pbo phase deteriorating piezoelectric properties is not formed in a pzt-based piezoelectric material, such that excellent electric, dielectric, and piezoelectric properties are exhibited..
Samsung Electro-mechanics Co., Ltd.


02/04/16
20160035935 
 Ultraviolet light emitting device separated from growth substrate and  fabricating the same patent thumbnailnew patent Ultraviolet light emitting device separated from growth substrate and fabricating the same
A uv light emitting device and a method for fabricating the same are disclosed. The method includes forming a first super-lattice layer including alxga(1-x)n on a substrate, forming a sacrificial layer including alzga(1-z)n on the first super-lattice layer, partially removing the sacrificial layer, forming an epitaxial layer on the sacrificial layer, and separating the substrate from the epitaxial layer, wherein the sacrificial layer includes voids, the substrate is separated from the epitaxial layer at the sacrificial layer, and forming an epitaxial layer includes forming an n-type semiconductor layer including n-type aluga(1-u)n (0<u≦z≦x<1).
Seoul Viosys Co., Ltd.


02/04/16
20160035892 
 Dislocation stress memorization technique (dsmt) on epitaxial channel devices patent thumbnailnew patent Dislocation stress memorization technique (dsmt) on epitaxial channel devices
The present disclosure relates to method of forming a transistor device having epitaxial source and drain regions with dislocation stress memorization (dsm) regions that provide stress to an epitaxial channel region, and an associated device. The method forms a first dislocation stress memorization (dsm) region and a second dsm region having stressed lattices within a substrate.
Taiwan Semiconductor Manufacturing Co., Ltd.


02/04/16
20160035851 
 Epitaxial metallic transition metal nitride layers for compound semiconductor devices patent thumbnailnew patent Epitaxial metallic transition metal nitride layers for compound semiconductor devices
A method for integrating epitaxial, metallic transition metal nitride (tmn) layers within a compound semiconductor device structure. The tmn layers have a similar crystal structure to relevant semiconductors of interest such as silicon carbide (sic) and the group iii-nitrides (iii-ns) such as gallium nitride (gan), aluminum nitride (aln), indium nitride (inn), and their various alloys.

02/04/16
20160035849 
 Strained channel of gate-all-around transistor patent thumbnailnew patent Strained channel of gate-all-around transistor
The disclosure relates to a semiconductor device. An exemplary structure for a nanowire structure comprises a first semiconductor material having a first lattice constant and a first linear thermal expansion constant; and a second semiconductor material having a second lattice constant and a second linear thermal expansion constant surrounding the first semiconductor material, wherein a ratio of the first lattice constant to the second lattice constant is from 0.98 to 1.02, wherein a ratio of the first linear thermal expansion constant to the second linear thermal expansion constant is greater than 1.2 or less than 0.8..
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035791 
 Resistance variable memory cell structures and methods patent thumbnailnew patent Resistance variable memory cell structures and methods
Resistance variable memory cell structures and methods are described herein. A number of embodiments include a first resistance variable memory cell comprising a number of resistance variable materials in a super-lattice structure and a second resistance variable memory cell comprising the number of resistance variable materials in a homogeneous structure..
Micron Technology, Inc.


02/04/16
20160035776 
 Method for manufacturing solid-state imaging device, and solid-state imaging device patent thumbnailnew patent Method for manufacturing solid-state imaging device, and solid-state imaging device
Certain embodiments provide a method for manufacturing a solid-state imaging device, including thinning a semiconductor substrate, forming a plurality of masking patterns, and forming a groove having inclined surfaces that are inclined relative to a front surface of the semiconductor substrate at a back surface of the semiconductor substrate. A plurality of light receiving sections are provided in a lattice pattern at the front surface of the semiconductor substrate to be thinned.
Kabushiki Kaisha Toshiba


02/04/16
20160035627 
new patent

High performance cmos device design


A semiconductor device includes a gate, which comprises a gate electrode and a gate dielectric underlying the gate electrode, a spacer formed on a sidewall of the gate electrode and the gate dielectric, a buffer layer having a first portion underlying the gate dielectric and the spacer and a second portion adjacent the spacer wherein the top surface of the second portion of the buffer layer is recessed below the top surface of the first portion of the buffer layer, and a source/drain region substantially aligned with the spacer. The buffer layer preferably has a greater lattice constant than an underlying semiconductor substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035618 
new patent

Ultrathin superlattice of mno/mn/mnn and other metal oxide/metal/metal nitride liners and caps for copper low dielectric constant interconnects


An electrical device including an opening in a low-k dielectric material, and a copper including structure present within the opening for transmitting electrical current. A liner is present between the opening and the copper including structure.
International Business Machines Corporation


02/04/16
20160030794 
new patent

Trampoline


The present invention is a trampoline with a unique frame structure to improve strength, stability and safety. The safety poles of the trampoline are organized in a lattice type of formation with multiple joints.

01/28/16
20160027931 

Thin film transistor and manufacturing method thereof, array substrate, and display apparatus


The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. The thin film transistor of the present invention comprises a gate, a gate insulation layer, a semiconductor active region, and a source and a drain connected with the semiconductor active region, and further comprises a surface charge transfer layer in contact with the semiconductor active region, the surface charge transfer layer is located above or below the semiconductor active region, and is used for causing the semiconductor active region to generate a large number of holes or electrons therein without changing the lattice structure of the semiconductor active region.
Hefei Boe Optoelectronics Technology Co., Ltd.


01/28/16
20160027867 

Semiconductor device


A semiconductor device includes a semiconductor layer having a first p-type semiconductor region at a first surface and a first n-type semiconductor region at a second surface opposite the first. A second n-type semiconductor region having a n-type dopant concentration lower than the first n-type semiconductor region is between the first p-type and first n-type semiconductor regions.
Kabushiki Kaisha Toshiba


01/28/16
20160027587 

Thin-film dielectric and thin-film capacitor element


A batio3-based perovskite solid solution and a knbo3-based perovskite solid solution are alternately formed to form a crystal structure gradient region where a lattice constant continuously changes at the interface, and thus crystal lattice strain occurs, thereby permitting the production of a thin-film dielectric having a high dielectric constant. Also, a large-capacity thin-film capacitor element can be produced by using the thin-film dielectric of the present invention..

01/28/16
20160027425 

Lattice structures


A unit cell for a lattice structure includes eight unit trusses disposed at vertices of the unit cell. A single unit truss is disposed at a centroid of the unit cell.
Milwaukee School Of Engineering


01/28/16
20160026801 

Method and system providing mutli-level security to gate level information flow


A preferred method for providing multi-level security to a gate level information flow receives or specifies a security lattice having more than two security levels. The security lattice defines how security levels relate to each other.
The Regents Of The University Of California


01/28/16
20160026258 

Virtual keyboard input for international languages


In one example, a computing device includes at least one processor configured to output for display, a graphical keyboard. The at least one processor may also be configured to model, in a first lattice, a plurality of candidate character strings that include symbols of a first alphabet.
Google Inc.


01/28/16
20160025108 

Vane with sealed lattice in a shroud of an axial turbomachine compressor


The present application relates to a stator of an axial turbomachine compressor. The stator includes a circular wall, such as an internal shroud, with a guiding surface in order to guide the primary flow of the turbomachine.
Techspace Aero S.a.


01/28/16
20160023868 

Lattice mast element, lattice boom comprising at least one lattice mast element of this type and crane comprising at least one lattice boom of this type


A lattice mast element for a crane comprises at least two longitudinal elements and at least one transverse element interconnecting the longitudinal elements and at least one bracing element for bracing the lattice mast element by interconnecting the longitudinal elements and/or the transverse element, wherein the longitudinal elements and the transverse element define a load bearing surface of the lattice mast element and the longitudinal elements are each configured as a two-dimensional load bearing structure.. .
Terex Cranes Germany Gmbh


01/28/16
20160023272 

Turbulating cooling structures


In a first embodiment, a hollow gas turbine engine workpiece comprises first and second walls formed via additive manufacturing, and a cooling passage defined between the first and second walls by a surface of the first and second walls having arithmetic average surface roughness of at least 100 μin (0.0025 mm). In a second embodiment, a method of manufacture of a gas turbine engine component comprises depositing successive layers of pulverant material via additive manufacturing to form first and second walls defining a cooling passage therebetween, and loading a grain size of the pulverant material to produce lattice convective cooling design networks of various size and proportions with each having a range of relative roughness values, 0.10<ε/dh<0.50 to achieve optimal thermal cooling performance along the cooling passage..
United Technologies Corporation


01/28/16
20160022655 

Compositions and methods for preventing infection of a wound and for advancing the healing process


The present disclosure relates to compositions and methods that are effective in controlling and preventing bacterial, viral and fungal infections in the living tissue of plants, humans and animals, and in advancing the healing process for wounds to that tissue. The disclosed compositions comprise a biocidal system, a ph buffer, and one or more of a surfactant, a cellular energy supplement, an inflammation reducer, a clotting agent, an electrolytic system, a lattice forming system, and for plants a fungicide, all in an aqueous composition..
Nbip, Llc


01/28/16
20160022431 

Spinal implant system and method


A spinal implant is provided that comprises a first vertebral engaging surface and a second vertebral engaging surface. A wall extends between the surfaces.
Warsaw Orthopedic, Inc.


01/28/16
20160022369 

System and interactive patient specific simulation of radiofrequency ablation therapy


A method and system for interactive patient-specific simulation of liver tumor ablation is disclosed. A patient-specific anatomical model of the liver and circulatory system of the liver is estimated from 3d medical image data of a patient.
Siemens Aktiengesellschaft


01/21/16
20160020722 

Roof mounted installation solar power system


A solar power system is mounted to a solar power componentry support structure suspended above a pre-existing surface by a collective of solar collector suspension base supports. Suspended solar power system row support structure members and suspended solar power system column support structure members may for a solar component position lattice to which a matrix of individual solar power components such as solar panels can be attached.
Sustainable Technologies, Llc


01/21/16
20160020581 

Semiconductor laser element


A semiconductor laser element is realized with high beam quality (index m2<1). A diffraction grating 6ba of a diffraction grating layer 6 extends along a principal surface 2a and is provided on a p-side surface 6a of the diffraction grating layer 6; the refractive index of the diffraction grating layer 6 periodically varies in directions extending along the principal surface 2a, in the diffraction grating 6ba; the diffraction grating 6ba has a plurality of holes 6b; the plurality of holes 6b are provided in the p-side surface 6a and arranged in translational symmetry along a square lattice r3; the plurality of holes 6b each have the same size and shape; each hole 6b corresponds to a lattice point of the diffraction grating 6ba and is of a triangular prism shape; a shape of a bottom face 6c of the hole 6b is an approximate right triangle..
Hamamatsu Photonics K.k.


01/21/16
20160020576 

Laser device


In a laser device, a different refractive index region 6b of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6b is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice.
Hamamatsu Photonics K.k.


01/21/16
20160020361 

Group iii nitride semiconductor light-emitting device and production method therefor


The present invention provides a group iii nitride semiconductor light-emitting device having a low drive voltage and a production method therefor. A p-type semiconductor layer formation step comprises a p-type cladding layer formation step of forming a p-side superlattice layer on a light-emitting layer by supplying a first raw material gas containing at least a group iii element and a dopant gas, a p-type intermediate layer formation step of forming a p-type intermediate layer on the p-side superlattice layer by supplying a first raw material gas and a dopant gas, a dopant gas supply step of supplying the dopant gas while stopping the supply of the first raw material gas after the p-type intermediate layer formation step, and a p-type contact layer formation step of forming a p-type contact layer on the p-type intermediate layer by supplying a first raw material gas and a dopant gas after the dopant gas supply step..
Toyoda Gosei Co., Ltd.


01/21/16
20160020153 

Method to fabricate a transistor wherein the level of strain applied to the channel is enhanced


Recrystallisation of the source and drain blocks such that the second semiconducting material imposes its lattice parameter on the source and drain zones.. .

01/21/16
20160019900 

Method and lattice vector quantization of an audio signal


An apparatus comprising: a vector generator configured to generate a first vector of parameters defining at least one audio signal; a vector extender configured to extend the first vector of parameters to a second vector, where the first vector is length n and the second vector is length n, where m is greater than n; a vector transformer configured to transform the second vector, a lattice quantizer configured to lattice quantize the transformed second vector; and a reverse transformer configured to reverse transform the lattice quantized transformed second vector, such that the first n components of a reverse transformed lattice quantized transformed second vector are a lattice quantization of the first vector.. .
Nokia Technologies Oy


01/21/16
20160018950 

Position sensor


A position sensor includes: a sheet-form optical waveguide including an under cladding layer, linear cores arranged in a lattice on the under cladding layer, and an over cladding layer formed to cover the cores; a light-emitting element connected to one end surface of the cores; and a light-receiving element connected to the other end surface of the cores. A refractive index difference between the cores and the under cladding layer and a refractive index difference between the cores and the over cladding layer are set in a specific range.
Nitto Denko Corporation


01/21/16
20160017944 

Composite brake disks and methods for coating


A brake disk formed of a light weight ceramic and ceramic composite materials, the brake disk having a coating overlying at least a portion of the brake disk. The brake disk includes parallel surfaces wherein at least a portion of the parallel surfaces are coated with a coating material to increase wear and decrease corrosion.
Tech M3, Inc.


01/21/16
20160017486 

Increasing zinc sulfide hardness


The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide.
Dow Global Technologies Llc


01/21/16
20160016765 

Lattice piece for a lattice boom, lattice boom and crane


The present invention relates to a lattice piece for a crane boom comprising at least two lattice piece parts which are separably connected to one another in the longitudinal direction by means of one or more releasable connection points, wherein one or more lattice piece parts have one or more longitudinal tubes at least sectionally in the region of the connection points.. .
Liebherr-werk Ehingen Gmbh


01/14/16
20160013348 

Inverted metamorphic multijunction solar cell with metamorphic layers


A multijunction solar cell having at least four solar subcells includes a first solar subcell having a first band gap, and a first graded interlayer adjacent to the first solar subcell, wherein the first graded interlayer has a second band gap greater than the first band gap and that is constant at 1.5 ev throughout the thickness of the first graded interlayer. A second solar subcell is adjacent to the first graded interlayer, wherein the second solar subcell has a third band gap smaller than the first band gap of the first solar subcell and wherein said second solar subcell is lattice mismatched with respect to the first solar subcell.
Solaero Technologies Corp.


01/14/16
20160013336 

Compound-semiconductor photovoltaic cell and manufacturing compound-semiconductor photovoltaic cell


A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell, which includes an absorption layer made of a first compound-semiconductor material which lattice matches with gallium arsenide (gaas) or germanium (ge); and a window layer made of aluminum indium phosphide (alx1in1-x1p (0<x1≦1)), arranged on an incident side of the absorption layer in a light incident direction, having a lattice constant less than a lattice constant of the absorption layer, and having a band gap greater than a band gap of the absorption layer.. .
Ricoh Company, Ltd.


01/14/16
20160013316 

Semiconductor structure and manufacturing method thereof


Some embodiments of the present disclosure provide a semiconductor structure including a substrate and an epitaxy region partially disposed in the substrate. The epitaxy region includes a substance with a lattice constant that is larger than a lattice constant of the substrate.
Taiwan Semiconductor Manufacturing Company Ltd.


01/14/16
20160013315 

Transistor including a stressed channel, a fabricating the same, and an electronic device including the same


A semiconductor device includes a first channel, a second channel, a first strained gate electrode including a first lattice-mismatched layer for applying a first stress to the first channel, and a second strained gate electrode including a second lattice-mismatched layer for applying a second stress to the second channel.. .
Sk Hynix Inc.


01/14/16
20160013277 

Semiconductor structure with template for transition metal dichalcogenides channel material growth


Disclosed is a semiconductor structure comprising a single crystal substrate, a channel layer formed above the substrate from a transition metal dichalcogenides (tmdc) material, and a single crystal epitaxial buffer layer formed between the substrate and the channel layer, wherein the buffer layer is formed from material having a lattice constant mismatch of less than 5% with the lattice constant of the channel layer material. Also, disclosed is a method of forming a semiconductor structure comprising selecting a substrate formed from a single crystal material, preparing the substrate for template growth, growing a template on the substrate wherein the template is formed from single crystal material, and growing channel material on the template wherein the channel material is formed from a tmdc material and wherein the buffer layer material has a lattice constant mismatch of less than 5% with the lattice constant of the channel layer material..
National Chiao-tung University


01/14/16
20160013251 

El display device


An el display device according to the present technology includes a light emitter in which an array of pixels are arranged, each of the pixels including sub-pixels configured to emit at least red, green, and blue light; and a thin film transistor array configured to control light emission of the light emitter. The sub-pixels include light-emitting layers, the light-emitting layers being configured to emit at least red, green, and blue light and being disposed within areas defined by a bank having a lattice shape.
Joled Inc.


01/14/16
20160010813 

Illumination device


Proposed is an illumination device (100), comprising a light source (110) such as an led or a laser diode, a wavelength conversion medium (120) such as a phosphor, and a periodic antenna array (300) made of a highly polarisable material such as a metal. The light source emits primary wavelength light that at least partially is converted in secondary wavelength light by the wavelength conversion medium.
Koninklijke Philips N.v.


01/14/16
20160010331 

Collapsible lattice


A lattice comprising two intersecting laths and a pivoting connector locating at the intersection between the laths that includes a male retainer and a female retainer that interlock so as to connect the laths together. The male and female retainers interlock such that the laths may pivot about the connector from an expanded framework configuration to a collapsed framework configuration of the lattice..
Universal Consumer Products, Inc.


01/07/16
20160006391 

Corded lattice based floating photovoltaic solar field with independently floating solar modules


Provided herein is a floating photovoltaic solar device designed to reduce the effect of wind forces without the use of external control or power. The device includes a floating anchored frame with a means for connecting an internal corded lattice; a corded lattice suspended within the floating frame and forming a set of polygonal cells in which independently floating solar photovoltaic modules are positioned.
Solaris Synergy (israel) Ltd.


01/07/16
20160006205 

Photonic bandgap fiber and fiber laser device using same


There is provided a photonic bandgap fiber used in a state in which at least a part of the photonic bandgap fiber is bent at radii of 15 cm or greater and 25 cm or less. A large number of high refractive index portions 57 are disposed in a nineteen-cell core type in three layers, and a v value is 1.5 or greater and 1.63 or less.
National University Corp. Hokkaido University


01/07/16
20160005895 

Interband cascade devices


Photovoltaic (pv) and photodetector (pd) devices, comprising a plurality of interband cascade (ic) stages, wherein the ic stages comprise an absorption region with a type-i superlattice and/or a bulk semiconductor material having a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.. .
Board Of Regents University Of Oklahoma


01/07/16
20160005864 

Field effect transistor and fabricating the same


A mosfet may be formed with a strain-inducing mismatch of lattice constants that improves carrier mobility. In exemplary embodiments a mosfet includes a strain-inducing lattice constant mismatch that is not undermined by a recessing step.
Samsung Electronics Co., Ltd.


01/07/16
20160005863 

Semiconductor structure and manufacturing method thereof


Some embodiments of the present disclosure provide a semiconductor structure, including a substrate and a regrowth region. The substrate is made of a first material with a first lattice constant, and the regrowth region is made of the first material and a second material, having a lattice constant different from the first lattice constant.
Taiwan Semiconductor Manufacturing Company Ltd.


01/07/16
20160005841 

Heterojunction bipolar transistor


A heterojunction bipolar transistor includes a collector layer composed of a semiconductor containing gaas as a main component; a base layer including a first base layer and a second base layer the first base layer forming a heterojunction with the collector layer and being composed of a semiconductor containing a material as a main component, the material being lattice-mismatched to the main component of the collector layer, the first base layer having a film thickness less than a critical thickness at which a misfit dislocation is introduced, the second base layer being joined to the first base layer and composed of a semiconductor containing a material as a main component, and the material being lattice-matched to the main component of the collector layer; and an emitter layer that forms a heterojunction with the second base layer.. .
Murata Manufacturing Co., Ltd.


01/07/16
20160005825 

Contact structure of semiconductor device


The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a cavity below the major surface; a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; a ge-containing dielectric layer over the strained material; and a metal layer over the ge-containing dielectric layer..
Taiwan Semiconductor Manufacturing Company, Ltd.


01/07/16
20160005808 

Semiconductor device and manufacturing same


According to one embodiment, a semiconductor device, includes: a first semiconductor region of a first conductivity type; a second semiconductor region provided on the first semiconductor region, an impurity concentration of the second semiconductor region being lower than an impurity concentration of the first semiconductor region; a third semiconductor region of a second conductivity type provided on the second semiconductor region; and a fourth semiconductor region provided on the third semiconductor region or in a portion of the third semiconductor region. A lattice strain of the fourth semiconductor region is greater than a lattice strain of the third semiconductor region..
Kabushiki Kaisha Toshiba


01/07/16
20160005793 

Memory element with a reactive metal layer


A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states.
Unity Semiconductor Corporation


01/07/16
20160005738 

Semiconductor device having a fin structure and manufacture the same


A semiconductor device is provided. In some examples, the semiconductor device includes: a substrate, a fin structure disposed with the substrate, a source and a drain that are formed in the fin structure, a channel area disposed between the source and the drain, a gate dielectric layer disposed on the channel area, and a gate line disposed on the gate dielectric layer.
Samsung Electronics Co., Ltd.


01/07/16
20160004387 

Information display system


The information display system includes a pc having a display, and an input device which enables a user to input new information to be added to information appearing on the display with an input element such as a pen, thereby outputting the inputted information to the pc. This input device includes an optical waveguide in a sheet form configured such that linear cores arranged in a lattice form are held between an under cladding layer and an over cladding layer both in a sheet form.
Nitto Denko Corporation


01/07/16
20160002089 

Method for manufacturing preform for photonic band gap fiber, manufacturing photonic band gap fiber, preform for photonic band gap fiber, and photonic band gap fiber


A photonic band gap fiber 1 includes a hollow core region 10 and a band gap region 27 in a honeycomb shape surrounding the core region 10 and having a plurality of holes 21 formed in a glass body 22. The holes 21 are surrounded by columnar glass bodies 25 disposed on three alternate apexes of a hexagon hex and plate glass bodies 26 disposed so as to join the columnar glass bodies 25 to the other three apexes of the hexagon hex.
Fujikura Ltd.


01/07/16
20160001951 

Pallet container


A pallet container for storing and for transporting a liquid filling material includes a base pallet, a lattice frame fastened thereon and made of metal bars, and a fabric cover suspended in the lattice frame and accommodating a liquid-tight inliner composed of a plastics film and/or metal foil for receiving the liquid filling material. The inliner arranged within the cube-shaped fabric cover is designed, for gas-assisted emptying, as a double chamber inliner with a rear chamber for blowing in compressed air or gas and a front chamber for receiving the liquid filling material.
Iba Intermediate Bulk Alliance Gmbh


01/07/16
20160001921 

Pallet container


A pallet container for storing and for transporting liquid filling materials includes a base pallet, a lattice frame fastened thereon and made of metal bars, and a fabric cover suspended in the lattice frame for accommodating a liquid-tight inliner for receiving the liquid filling material. The fabric cover and the inliner with preassembled filling and removal fitting is provided in the delivery state as a separately premanufactured, flat-folded package in the form of a modular unit which can be exchanged only as a complete modular unit.
Iba Intermediate Bulk Alliance Gmbh


01/07/16
20160000610 

Liquid-permeable primary dressing with a silicone coating


The present invention relates to a fluid-permeable primary dressing in strip form, having pores, perforations or honeycomb lattices, which enable the passage of fluid, further having a coating of a material comprising silicone (fig. 1)..
Bsn Medical Gmbh


12/31/15
20150380737 

Lithium-containing composite oxide and process for its production


A lithium-containing composite oxide essentially containing li, ni, co and mn, which has a crystal structure with space group r-3m, with a c-axis lattice constant being from 14.208 to 14.228 Å, and with an a-axis lattice constant and the c-axis lattice constant satisfying the relation of 3a+5.615≦c≦3a+5.655, and of which the integrated intensity ratio (i003/i104) of the (003) peak to the (104) peak in an xrd pattern is from 1.21 to 1.39.. .

12/31/15
20150380582 

Voltaic cell


A voltaic cell uses a radioactive material for energy. Energetic particles emitted by the radioactive material boost charge carriers within a semiconductor lattice into higher energy bands.
Intrienergy Inc.


12/31/15
20150380553 

Semiconductor devices including source/drain regions having multiple epitaxial patterns


A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the, first epitaxial pattern.
Samsung Electronics Co., Ltd.


12/31/15
20150380438 

Trapping dislocations in high-mobility fins below isolation layer


The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a high-mobility fin field effect transistor (finfet) fin in a silicon semiconductor on insulator (soi) substrate by trapping crystalline lattice dislocations that occur during epitaxial growth in a recess formed in a semiconductor layer. The crystalline lattice dislocations may remain trapped below a thin isolation layer, thereby reducing device thickness and the need for high-aspect ratio etching and fin formation..
International Business Machines Corporation


12/31/15
20150380364 

Semiconductor device and manufacturing the same


A metal oxide layer is in contact with an interlayer insulating layer covering a transistor, and has a stacked-layer structure including a first metal oxide layer having an amorphous structure and a second metal oxide layer having a polycrystalline structure. In the first metal oxide layer, there are no crystal grain boundaries, and grid intervals are wide as compared to those in a metal oxide layer in a crystalline state; thus, the first metal oxide layer easily traps moisture between the lattices.
Semiconductor Energy Laboratory Co., Ltd.


12/31/15
20150380025 

Substrates for thin-film magnetic heads, magnetic head sliders, and hard disk drive devices


An altic-based substrate suitable for a thin-film magnetic head is provided. The al2o3—tic based substrate for a thin-film magnetic head including an al2o3 phase and a tic phase, wherein a c-axis lattice constant of the al2o3 phase is 12.992 Å or more and 12.998 Å or less, and a lattice constant of the tic phase is 4.317 Å or more and 4.325 Å or less..
Hitachi Metals, Ltd.


12/31/15
20150380024 

Substrates for thin-film magnetic heads, magnetic head sliders, and hard disk drive devices


An altic-based substrate suitable for a thin-film magnetic head is provided. The al2o3-tic based substrate for a thin-film magnetic head including an al2o3 phase and a tic phase, wherein a c-axis lattice constant of the al2o3 phase is 12.985 Å or more and 12.992 Å or less, and a lattice constant of the tic phase is 4.297 Å or more and 4.325 Å or less..
Hitachi Metals, Ltd.


12/31/15
20150380023 

Substrates for thin-film magnetic heads, magnetic head sliders, and hard disk drive devices


An altic-based substrate suitable for a thin-film magnetic head is provided. The al2o3—tic based substrate for a thin-film magnetic head including an al2o3 phase and a tic phase, wherein a c-axis lattice constant of the al2o3 phase is 12.992 Å or more and 12.998 Å or less, and a lattice constant of the tic phase is 4.297 Å or more and 4.315 Å or less..
Hitachi Metals, Ltd.


12/31/15
20150379767 

Image processing image processing


An image processing apparatus comprises an acquiring section that acquires dem data indicating digital elevation of each lattice-shaped area in a predetermined map region, a selecting section that selects at least one of a plurality of line filters that filters data which is continuous in one direction in the map region and a plurality of matrix filters that filters data constituting a two-dimensional region in the map region, a filter processing section that conducts filter processing of the dem data acquired by the acquiring section by a filter selected by the selecting section, and an outputting section that outputs the dem data after being filtered in the filter processing.. .
Japan Oil, Gas And Metals National Corporation


12/31/15
20150379271 

Combining type-analysis with points-to analysis for analyzing library source-code


In general, in one aspect, the invention relates to a method for statically analyzing a library that includes obtaining native method annotations associated with native methods invoked by the library and extracting facts corresponding to the library from the library to obtain library facts. The library is written in a first programming language.
Oracle International Corporation


12/31/15
20150378517 

Position sensor


A position sensor includes: a sheet-form optical waveguide including a sheet-form under cladding layer, a plurality of linear cores arranged in a lattice form and formed on a surface of the under cladding layer, and a sheet-form over cladding layer covering the cores; a light-emitting element connected to one end surface of the cores; and a light-receiving element connected to the other end surface of the cores. The cores have an elasticity modulus higher than that of the under cladding layer and that of the over cladding layer.
Nitto Denko Corporation


12/31/15
20150376911 

Physical exercise training techniques


A swimming pool cover assembly including a frame, at least one cover, and an adjustment means. The frame including at least one inflatable portion and an interconnected three-dimensional (3d) lattice of inflatable straight tubes.

12/31/15
20150376806 

Electrochemical processing of materials, methods and production


Electrochemically aligned and compacted molecules, nanoparticles and microparticles with ampholytic nature, such as collagen, elastin, keratin and charged nanoparticle materials, methods of making and using the materials and associated production-related devices. In one embodiment, a device for producing continuous electrochemically aligned strands, threads or fibers is disclosed.
Case Western Reserve University


12/31/15
20150376572 

Adipose-derived stem cells and lattices


The present invention provides adipose-derived stem cells (adscs), adipose-derived stem cell-enriched fractions (adsc-ef) and adipose-derived lattices, alone and combined with the adscs of the invention. In one aspect, the present invention provides an adsc substantially free of adipocytes and red blood cells and clonal populations of connective tissue stem cells.

12/31/15
20150375800 

Composite reinforcement for vehicle body structures


A reinforcement received between facing surfaces of adjacent panels that may be part of a hinge pillar of a vehicle such as a pickup truck and the panels may be aluminum. The reinforcement may be a one-piece molded structure.
Ford Global Technologies, Llc


12/31/15
20150374520 

Self-expanding stent


The stent of this invention is a self-expanding stent created by a scaffolding lattice. The stent may be made from a nickel-titanium alloy.
Orbusneich Medical, Inc.


12/24/15
20150372179 

Multi-junction solar cell, methods for the production thereof, and uses thereof


A multi-junction solar cell having at least three p-n junctions is proposed, which comprises a rear-side subcell comprising gasb, which has at least one p-n junction, and a front-side subcell which has at least two p-n junctions and which is characterised in that the rear-side subcell has a ≧2%, in particular >4%, larger lattice constant than the front-side subcell and the two subcells are connected to each other via an optically transparent and electrically conductive wafer-bond connection. The multi-junction solar cell achieves a high absorption up to the band gap energy of the lowermost gasb-comprising subcell and a photoelectric voltage which is increased relative to multi-junction solar cells from the state of the art.
Fraunhofer-gesellschaft Zur Forderung Der Angewandten Forschung E.v.


12/24/15
20150372178 

High efficiency multijunction solar cells


Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group iii on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of sb and bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed..
Solar Junction Corporation


12/24/15
20150372135 

Semiconductor device having vertical channel, resistive memory device including the same, and manufacturing the same


A semiconductor device includes a semiconductor substrate having a first conductivity type, a plurality of pillars extending to a direction perpendicular to a surface of the semiconductor substrate, a stress providing layer formed in the semiconductor substrate between pillars and forming a junction with the semiconductor substrate below each pillar to cause lattice deformation in the pillar, a source region having a second conductivity type opposite to the first conductivity type formed in the semiconductor substrate below the pillar, a drain region having the second conductivity type formed in an upper portion of the pillar, a gate insulating layer formed on a lateral surface of the pillar and a surface of the stress providing layer, and a gate electrode formed to surround the lateral surface of the pillar.. .
Sk Hynix Inc.


12/24/15
20150372120 

Fin structure of semiconductor device


A fin structure of a semiconductor device, such as a fin field effect transistor (finfet), and a method of manufacture, is provided. In an embodiment, trenches are formed in a substrate, and a liner is formed along sidewalls of the trenches, wherein a region between adjacent trenches define a fin.
Taiwan Semiconductor Manufacturing Company, Ltd.


12/24/15
20150371723 

Control of low energy nuclear reactions in hydrides, and autonomously controlled heat generation module


A treatment of a possibly powdered, sintered, or deposited lattice (e.g., nickel) for heat generating applications and a way to control low energy nuclear reactions (“lenr”) hosted in the lattice by controlling hydride formation. The method of control and treatment involves the use of the reaction lattice, enclosed by an inert cover gas such as argon that carries hydrogen as the reactive gas in a non-flammable mixture.
Brillouin Energy Corp.


12/24/15
20150371441 

Apparatus and generating 3d object


The present invention relates to an apparatus and method for generating a 3d object. The apparatus includes a 3d object generation unit for generating a 3d object by latticizing and dividing the structural element of a 2d web page into a plurality of polygons and a 3d object manipulation processing unit for, when an object manipulation signal is inputted in the generated 3d object, generating 3d transform matrices by changing vertex coordinate values of respective lattice elements in response to the object manipulation signal and generating a transformed 3d object by applying the generated 3d transform matrices to predefined css transform..
Sk Planet Co., Ltd.




Lattice topics: Semiconductor, Semiconductor Device, Semiconductor Material, Crystallin, Disconnect, Transistors, Replacement Gate, Semiconductor Devices, Dislocations, Dislocation, Image Processing, Coordinates, Surface Plasmon Polariton, Antenna Array

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