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Lattice

Lattice-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Methods and devices for sequential sphere decoding
October 12, 2017 - N°20170294986

The decoder being configured to determine at least one estimate of said vector of information symbols from at least one of the lattice points found by the symbol estimation unit (309).
Light emitting diode and method of manufacturing the same
Industry Foundation Of Chonnam National University
October 12, 2017 - N°20170294556

A light emitting diode and a method of manufacturing the light emitting diode are provided. The light emitting diode includes an n-type semiconductor layer, an inclined type superlattice thin film layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is disposed on a substrate. The inclined type superlattice thin film layer is disposed on the n-type ...
Thermo-electrically pumped light-emitting diodes
Industry Foundation Of Chonnam National University
October 12, 2017 - N°20170294551

Contrary to conventional wisdom, which holds that light-emitting diodes (leds) should be cooled to increase efficiency, the leds disclosed herein are heated to increase efficiency. Heating an led operating at low forward bias voltage (e. G., v<kbt/q) can be accomplished by injecting phonons generated by non-radiative recombination back into the led's semiconductor lattice. This raises the ...
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High electron mobility transistor (hemt) device
Qorvo Us, Inc.
October 12, 2017 - N°20170294529

A high electron mobility transistor (hemt) device with epitaxial layers that include a gallium nitride (gan) layer and an aluminum (al) based layer having an interface with the gan layer is disclosed. The al based layer includes al and an alloying element that is selected from group iiib transition metals of the periodic table of elements. The epitaxial layers are ...
Semiconductor devices with enhanced deterministic doping and related methods
Atomera Incorporated
October 12, 2017 - N°20170294514

A method for making a semiconductor device may include forming a plurality of stacked groups of layers on a semiconductor substrate, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include ...
Organic light emitting display device
Lg Display Co., Ltd.
October 12, 2017 - N°20170294155

An organic light emitting display device including a plurality of pixels is provided according to an embodiment. Each of the plurality of pixels includes three sub pixels. The plurality of pixels include a first pixel having a green sub pixel and two red sub pixels, a second pixel having a green sub pixel and two blue sub pixels, the second ...
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Lattice Patent Applications
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inventor
  • 447+ full patent PDF documents of Lattice-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Right-angle waveguide having circular-hole-type square-lattice photonic crystal and single compensation scattering rod having low refractive ...
Shenzhen University
October 12, 2017 - N°20170293077

A right-angle bending waveguide includes a circular-hole-type square-lattice photonic crystal (phc) and a single compensation scattering rod having a low refractive index. The right-angle bending waveguide is a phc formed from first dielectric rods having a low refractive index arranged in a background dielectric having a low refractive index according to a square lattice. In the phc, one row and ...
Strut linkage for a steel construction, and steel construction having a strut linkage
Thyssenkrupp Ag
October 12, 2017 - N°20170292283

A strut linkage for a steel construction may involve a tower of a wind turbine and/or a corner post of a lattice tower. In order that high forces can be removed via the strut linkage without causing increased stress concentrations, excessive use of material, and/or an excessive structural outlay, a plate element is provided for arranging between, preferably ...
Honeycomb core, method of producing a honeycomb core, and sandwich panel comprising a honeycomb core
Magna Steyr Fahrzeugtechnik Ag & Co Kg
October 12, 2017 - N°20170291383

A honeycomb core having a lattice structure which includes a resin-impregnated matrix, a method for producing such a honeycomb core, a sandwich panel having such a honeycomb core, and use of such a honeycomb core or such a sandwich panel in automobile construction. The matrix is impregnated inhomogeneously with the resin.
Template-induced silicate-doped hydroxyapatite and the preparation method
Asia Biomaterials (wuhan) Co. Ltd.
October 12, 2017 - N°20170290855

A silicate-doped hydroxyapatite material has an ordered and directional growth structure. The silicon content in the silicate-doped hydroxyapatite material ranges from 0. 1 wt % to 1. 6 wt %, and silicon is doped in hydroxyapatite lattices in a form of silicate. A template-induced method for manufacturing the synthetic silicate-doped hydroxyapatite material above.
Magnetic elastic hairdressing massage comb
Shen Zhen Rui Tian Technology Co., Ltd.
October 12, 2017 - N°20170290733

Disclosed is a magnetic elastic hairdressing massage comb, which includes a circle of outer non-electric conductive adiabatic gears with a certain interval space arranged around a working face of the shell and a heat conductive comb body layer arranged at the inner of the non-electric conductive adiabatic gear circle, on which several lattice arrayed magnetic elastic moving gears are set. ...
Coldness-preventing protective clothing
Shen Zhen Rui Tian Technology Co., Ltd.
October 12, 2017 - N°20170290378

[means for resolution] coldness-preventing protective clothing is formed in the form of a working wear by using a sheet-shaped base material formed by joining either of a lattice-shaped, net-shaped, linear, or point-like foamed body or a sheet-shaped foamed body having at least one of a concave portion and a hole, or a combination of two or more of these foamed ...
Hardware interface with space-efficient cell pattern
Intel Corporation
October 05, 2017 - N°20170288327

Techniques and mechanisms for providing connectivity to an integrated circuit device via a hardware interface. In an embodiment, the hardware interface includes contacts forming an array of nodes. Some or all such nodes are arranged in cells, wherein the respective node types of each cell's nodes are according to the same cell pattern. The cell pattern includes eight b nodes ...
Lattice Patent Pack
Download 447+ patent application PDFs
Lattice Patent Applications
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For professional research & prior art discovery
inventor
  • 447+ full patent PDF documents of Lattice-related inventions.
  • Exact USPTO filing data with full-text, images, drawings & claims.
  • Index pages: Table View and Image-Grid View layouts. All images in each PDF.
Electrode material for lithium-ion secondary battery and method for manufacturing same
Sumitomo Osaka Cement Co., Ltd
October 05, 2017 - N°20170288213

An electrode material for a lithium-ion secondary battery of the present invention includes particles which are made of lifexmn1-w-x-y-zmgycazawpo4, have an orthorhombic crystal structure, and have a space group of pmna, in which a mis-fit value [(1−(b2×c2)/(b1×c1))×100] of a be plane which is computed from lattice constants b1 and c1 of the ...
Illumination device
Koninklijke Philips N.v.
October 05, 2017 - N°20170288098

Embodiments of the invention include a semiconductor light emitting device for emitting a first light at a first wavelength and a wavelength conversion medium arranged to convert at least part of the first light into a second light at a second wavelength. The wavelength conversion medium is disposed between a periodic antenna array and the semiconductor light emitting device. The ...
Semiconductor structure
Genesis Photonics Inc.
October 05, 2017 - N°20170288092

A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from alxga1-xn (0<x<1) while the stress control layer is made from ...
Multichannel devices with improved performance and methods of making the same
Northrop Grumman Systems Corporation
October 05, 2017 - N°20170288045

A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of ...
Graded buffer layers with lattice matched epitaxial oxide interlayers
International Business Machines Corporation
October 05, 2017 - N°20170288024

A lattice matched epitaxial oxide interlayer is disposed between each semiconductor layer of a graded buffer layer material stack. Each lattice matched epitaxial oxide interlayer inhibits propagation of threading dislocations from one semiconductor layer of the graded buffer layer material stack into an overlying semiconductor layer of the graded buffer layer material stack. This allows for decreasing the thickness of ...
Method of improving localized wafer shape changes
Macronix International Co., Ltd.
October 05, 2017 - N°20170287921

A method of manufacturing an integrated circuit including forming trenches into the surface of a crystalline wafer and the trenches extending along a <100> lattice direction is disclosed. Such wafer can experience less deformation due to less stress induced when the trenches are filled using a spin-on dielectric material. Thus, the overlay issue caused by wafer shape ...
Semiconductor substrate with stress relief regions
Infineon Technologies Austria Ag
October 05, 2017 - N°20170287709

A crystalline base substrate including a first semiconductor material and having a main surface is provided. The base substrate is processed so as to damage a lattice structure of the base substrate in a first region that extends to the main surface without damaging a lattice structure of the base substrate in second regions that are adjacent to the first ...
Diamond structures as fuel capsules for nuclear fusion
Sunshell Llc
October 05, 2017 - N°20170287572

Fuel capsules usable in inertial confinement fusion (icf) reactors have shells made from materials having a diamond (sp3) lattice structure, including diamond materials in synthetic crystalline, polycrystalline (ordered or disordered), nanocrystalline and amorphous forms. The interior of the shell is filled with a fusion fuel mixture, including any combination of deuterium and/or tritium and/or helium-3 and/or other ...
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