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Lattice patents



      
           
This page is updated frequently with new Lattice-related patent applications. Subscribe to the Lattice RSS feed to automatically get the update: related Lattice RSS feeds. RSS updates for this page: Lattice RSS RSS


Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor device

Shin-etsu Handotai

Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor device

Lattice matchable alloy for solar cells

Solar Junction

Lattice matchable alloy for solar cells

Date/App# patent app List of recent Lattice-related patents
01/29/15
20150032443
 Self-learning statistical natural language processing for automatic production of virtual personal assistants patent thumbnailnew patent Self-learning statistical natural language processing for automatic production of virtual personal assistants
Technologies for natural language request processing include a computing device having a semantic compiler to generate a semantic model based on a corpus of sample requests. The semantic compiler may generate the semantic model by extracting contextual semantic features or processing ontologies.
01/29/15
20150031193
 Semiconductor substrate suitable for the realization of electronic and/or optoelectronic devices and relative manufacturing process patent thumbnailnew patent Semiconductor substrate suitable for the realization of electronic and/or optoelectronic devices and relative manufacturing process
A semiconductive substrate (1) is described that is suitable for realising electronic and/or optoelectronic devices of the type comprising at least one substrate (3), in particular of single crystal silicon, and an overlying layer of single crystal silicon (5). Advantageously, according to the invention, the semiconductive substrate (1) comprises at least one functional coupling layer (10) suitable for reducing the defects linked to the differences in the materials used.
Consiglio Nazionale Delle Ricerche
01/29/15
20150029710
 Cover bottom and display device using the same patent thumbnailnew patent Cover bottom and display device using the same
Disclosed are a cover bottom, which includes a plurality of led frames with an led array adhered thereto and a plurality of reinforcing frames coupled to the led frames in a lattice type, and a display device using the same. The cover bottom includes at least two or more light emitting diode (led) frames, to which an led array is adhered, and at least two or more reinforcing frames coupled to the led frames in a lattice type..
Lg Display Co., Ltd.
01/29/15
20150028457
 Epitaxial substrate, semiconductor device, and  manufacturing semiconductor device patent thumbnailnew patent Epitaxial substrate, semiconductor device, and manufacturing semiconductor device
The present invention includes: a silicon-based substrate; and an epitaxial growth layer that has a configuration in which first and second nitride semiconductor layers having different lattice constants and thermal expansion coefficients are alternately laminated, and is arranged on the silicon-based substrate so that a film thickness thereof is gradually reduced at an outer edge portion. As a result, there are provided an epitaxial substrate and a semiconductor device in which generation of cracks at the outer edge portion is suppressed, and a method for manufacturing the semiconductor device..
Shin-etsu Handotai Co., Ltd.
01/29/15
20150028286
 Method for growing germanium/silicon-germanium superlattice patent thumbnailnew patent Method for growing germanium/silicon-germanium superlattice
A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (sls) using an ultra-high vacuum-chemical vapor deposition (uhv-cvd) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth.
Bae Systems Information & Electronic Systems Integration Inc.
01/29/15
20150027520
 Lattice matchable alloy for solar cells patent thumbnailnew patent Lattice matchable alloy for solar cells
An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 ev, namely, ga1-xinxnyas1-y-zsbz with a low antimony (sb) content and with enhanced indium (in) content and enhanced nitrogen (n) content, achieving substantial lattice matching to gaas and ge substrates and providing both high short circuit currents and high open circuit voltages in gainnassb subcells for multijunction solar cells. The composition ranges for ga1-xinxnyas1-y-zsbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03..
Solar Junction Corporation
01/22/15
20150025879
 Audio and speech coding device, audio and speech decoding device,  coding audio and speech, and  decoding audio and speech patent thumbnailAudio and speech coding device, audio and speech decoding device, coding audio and speech, and decoding audio and speech
This invention introduces audio/speech encoding apparatus audio/speech decoding apparatus, audio/speech encoding method and audio/speech decoding method to efficiently encode the quantization parameters of split multi-rate lattice vector quantization. In this invention, the position of the sub-vector whose codebook indication consumes the most bits is firstly located, and then the value of the codebook is estimated based on the total number of bits available and the bits usage information for other sub-vectors.
Panasonic Intellectual Property Corporation Of America
01/22/15
20150024223
 Monolithic integrated lattice mismatched crystal template and preparation method thereof patent thumbnailMonolithic integrated lattice mismatched crystal template and preparation method thereof
The present invention provides a monolithic integrated lattice mismatched crystal template and a preparation method thereof by using low-viscosity material, the preparation method for the crystal template includes: providing a first crystal layer with a first lattice constant; growing a buffer layer on the first crystal layer; below the melting point of the buffer layer, growing a second crystal layer and a template layer by sequentially performing the growth process of a second crystal layer and the growth process of a first template layer on the buffer layer, or growing a template layer by directly performing a first template layer growth process on the buffer layer; melting and converting the buffer layer to an amorphous state, performing a second template layer growth process on the template layer grown by the first template layer growth process at the growth temperature above the glass transition temperature of the buffer layer, sequentially growing a template layer until the lattice of the template layer is fully relaxed. Compared to the prior art, the invention has advantages of simple preparation, achieving in various lattice constant material combinations on one substrate and low dislocation density, high crystal quality..
Shanghai Institute Of Microsystem And Information Technology, Chinese Academy
01/22/15
20150024206
 Coated devices and methods for coating patent thumbnailCoated devices and methods for coating
The present invention relates in a first aspect to a method of coating surfaces of substrates with a lattice-like structure. In particular, the present invention relates to an in vitro method of coating surfaces by binding of epsin or a fragment thereof on the surface and, thereafter, binding of a compound forming the lattice like structure, in particular, binding of the clathrin heavy chain, to the epsin bound on the surface, thus, obtaining a coated substrate having a lattice like structure on the surface.
Medizinische Hochschule Hannover
01/22/15
20150023863
 Material and exhaust gas  using the same patent thumbnailMaterial and exhaust gas using the same
A material is described of formula naxmyalasibo67 with face centered cubic (fcc) lattices forming f -4 3 m cubic structure, wherein m is at least one of lithium, potassium, rubidium, caesium, vanadium, chromium, iron, cobalt, nickel, ruthenium, rhodium, palladium, silver, osmium, iridium, platinum, gold, and cerium; 0<x+y≦22/3; wherein when y=0, 4<x≦/3, when 0<y≦/3, 0≦x<22/3, and when m is potassium, x>0; 1≦a3; 1≦b≦3; and 0<δ≦32/3. An exhaust gas system comprising the material and a method are also described herein..
General Electric Company
01/22/15
20150023441

Operating wireless local area network station


Or, separating a desired signal and an interference signal from the stream signal based on the analysis result, ascertaining a modulation scheme of the interference signal, and setting the ascertained modulation scheme of the interference signal as decreased lattice points.. .
01/22/15
20150022810

Spectrophotometer and image partial extraction device


A spectrophotometer in which output ends of optical fibers are one-dimensionally arrayed in a z-axis direction on an output end face of a fiber box. That is to say, a two-dimensional area image of a display screen picked up through input ends arranged at 10×10 lattice points on an input end face of optical fibers is converted into a one-dimensional image inside the fiber box and projected from output ends on the output end face in the form of a one-dimensional area image parallel to the z-axis.
Shimadzu Corporation
01/22/15
20150022659

Luminance measuring apparatus


The luminance measuring apparatus for measuring the luminance of a road has an image pickup unit for picking up an image of the road, an input unit for inputting information concerning the road as an imaging target, and a luminance measuring unit for defining a luminance measurement target field a on the basis of the information input from the input unit and measuring the luminance within the luminance measurement target field a on the basis of an image picked up by the image pickup unit. The luminance measuring unit divides the luminance measurement target field a of the pickup image into a grid having a predetermined number of lattice intersection points mp in an equivalent of plan view, and allocates measurement points of luminance to the respective lattice intersection points mp..
Iwasaki Electric Co., Ltd.
01/22/15
20150021661

Transistor having high breakdown voltage and making the same


A transistor includes a substrate and a graded layer on the substrate, wherein the graded layer is doped with p-type dopants. The transistor further includes a superlattice layer (sls) on the graded layer, wherein the sls has a p-type dopant concentration equal to or greater than 1×1019 ions/cm3.
Taiwan Semiconductor Manufacturing Company, Ltd.
01/22/15
20150021546

Semiconductor light emitting device, semiconductor wafer, and manufacturing semiconductor light emitting device


According to one embodiment, a semiconductor light emitting device includes a light emitting layer and a first semiconductor layer. The first semiconductor layer is arranged with the light emitting layer in a first direction.
Kabushiki Kaisha Toshiba
01/22/15
20150020875

High performance, high bandgap, lattice-mismatched, gainp solar cells


High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.. .
Alliance For Sustainable Energy, Llc
01/22/15
20150020729

Germanium enriched silicon material for making solar cells


Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials.
Silicor Materials Inc.
01/15/15
20150017444

Rational assembly of nanoparticle superlattices with designed lattice symmetries


A method for lattice design via multivalent linkers (ldml) is disclosed that introduces a rationally designed symmetry of connections between particles in order to achieve control over the morphology of their assembly. The method affords the inclusion of different programmable interactions within one linker that allow an assembly of different types of particles.
Brookhaven Science Associates, Llc
01/15/15
20150017383

Pyramidal kagome structure and its fabricating method


The present invention relates to a pyramidal kagome structure and more particularly, to a pyramidal kagome structure having a broaden contact area with a plate member and its fabricating method. According to the invention, a lattice mesh is formed with a plate so that continuous and mass-production is permitted and the produced pyramidal truss structures are assembled into a pyramidal kagome truss structure by combining the apexes of the pyramidal truss structures, whereby improved mechanical strength is obtained.
Korea Advanced Institute Of Science And Technology
01/15/15
20150017013

Turbo-machine impeller manufacturing


A method of manufacturing a turbo-machine impeller, which includes a hub and a plurality of blades, using powder material in an additive-manufacturing process. The method includes: applying energy to the powder material by way of a high energy source, and solidifying the powder material.
Nuovo Pignone S.r.l.
01/15/15
20150015948

Polarizing plate and manufacturing the same


A polarizing plate having an excellent optical property and a method of manufacturing the same are disclosed. The polarizing plate includes: a transparent substrate 11 transmitting light in a used bandwidth; an absorbing layer 12 having at least a metal-containing semiconductor layer containing a metal, the absorbing layer being arranged as a one-dimensional lattice shaped wire-grid structure having a pitch smaller than the wavelength of the light in the used bandwidth; a dielectric layer 13 arranged as a one-dimensional lattice shaped wire-grid structure having a pitch smaller than the wavelength of light in the used bandwidth; and a reflective layer 14 arranged as a one-dimensional lattice shaped wire-grid structure having a pitch smaller than the wavelength of light in the used bandwidth, wherein the absorbing layer 12, the dielectric layer 13 and the reflective layer 14 are layered on the transparent substrate 11 in this or reversed order..
Dexerials Corporation
01/15/15
20150014745

Strained ingaas quantum wells for complementary transistors


An ingaas n-channel quantum well heterostructure for use in a complementary transistor having a sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials..
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
01/15/15
20150014266

Revolving tower crane


The present disclosure relates to a mobile revolving tower crane with a crane tower consisting of individual lattice pieces and with a main arm that is articulated in a rockable manner to the tower via a rocking mechanism, or with a rockable tip, wherein the crane tower comprises a climbing device.. .
Liebherr-werk Ehingen Gmbh
01/08/15
20150012781

Power supply diagnostic strategy


A power supply diagnostic strategy for discrete power supply diagnostic states is independent of the underlying memory structure. The values used in the associated algorithm are selected to ensure that random linked failures will be detected.
Trw Automotive U.s. Llc
01/08/15
20150010705

Methods for forming templated materials


Methods of forming layers can comprise defining a plurality of discrete site-isolated regions (sirs) on a substrate, forming a first layer on one of the discrete sirs, forming a second layer on the first layer, measuring a lattice parameter or an electrical property of the second layer, the process parameters for the formation of the first layer are varied in a combinatorial manner between different discrete sirs to explore the possible layers that can result in suitable lattice matching for second layer of a desired crystalline structure.. .
Intermolecular, Inc.
01/08/15
20150009746

Solid-state quantum memory based on a nuclear spin coupled to an electronic spin


A system comprising a solid state lattice containing an electronic spin coupled to a nuclear spin; an optical excitation configuration which is arranged to generate first optical radiation to excite the electronic spin to emit output optical radiation without decoupling the electronic and nuclear spins; wherein the optical excitation configuration is further arranged to generate second optical radiation of higher power than the first optical radiation to decouple the electronic spin from the nuclear spin thereby increasing coherence time of the nuclear spin; a first pulse source configured to generate radio frequency (rf) excitation pulse sequences to manipulate the nuclear spin and to dynamically decouple the nuclear spin from one or more spin impurities in the solid state lattice so as to further increase the coherence time of the nuclear spin; a second pulse source configured to generate microwave excitation pulse sequences to manipulate the electronic spin causing a change in intensity of the output optical radiation correlated with the electronic spin and with the nuclear spin via the coupling between the electronic spin and the nuclear spin; and a detector configured to detect the output optical radiation correlated with the electronic spin and the nuclear spin so as to detect a nuclear spin state of the nuclear spin.. .
President And Fellows Of Harvard College
01/08/15
20150008483

Fin structure of semiconductor device


The disclosure relates to a fin field effect transistor (finfet). An exemplary finfet comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower portion comprising a first semiconductor material having a first lattice constant; an upper portion comprising the first semiconductor material having the first lattice constant; a middle portion between the lower portion and upper portion, wherein the middle portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; and a pair of notches extending into opposite sides of the middle portion; and an isolation structure surrounding the fin structure, wherein a top surface of the isolation structure is higher than a top surface of the pair of notches..
Taiwan Semiconductor Manufacturing Company, Ltd.
01/08/15
20150008385

Memory device


According to one embodiment, a memory device includes a stacked film stacked in a superlattice structure. The stacked film includes a first layer, a second layer, and a third layer different in composition.
Kabushiki Kaisha Toshiba
01/01/15
20150005811

Expandable occlusion devices and methods of use


Devices and methods for occluding the left atrial appendage are disclosed herein. An occlusion device can include an expandable lattice structure having a proximal portion configured to be positioned at or near the ostium of the laa, a distal portion configured to extend into an interior portion of the laa, and a contact portion between the proximal and distal portions.
Inceptus Medical, Llc
01/01/15
20150005151

Carbon fiber composite material, and brake member, structural member for semiconductor, heat resistant panel and heat sink using the carbon fiber composite material


The carbon fiber composite material is obtained by mixing carbon fiber with a resin, subsequently molding the mixture and carbonizing the molded product, and subjecting the resultant carbonized product to melt impregnation with silicon, in which the lattice spacing d002 of the carbon (002) plane of the carbon fiber as measured by an x-ray diffraction method is 3.36 to 3.43. A brake member, a structural member for semiconductor, a heat resistant panel and a heat sink, all of which use this carbon fiber composite material, are provided.
01/01/15
20150004889

Coated abrasive article based on a sunflower pattern


An abrasive article having a plurality of abrasive areas arranged in a non-uniform distribution pattern, wherein the pattern is spiral or phyllotactic, such as a spiral lattice, and in particular those patterns described by the vogel model, such as a sunflower pattern.. .
Saint-gobain Abrasifs
01/01/15
20150002634

Image sensor, image-capturing apparatus and image-capturing system


To produce both 2d image data and color parallax image data from image data output from a single-plate image sensor, the resolutions of the 2d image data and parallax image data may be both degraded. The image sensor has a primitive lattice that is a group of pixels including (i) at least four types of parallax pixels formed by photoelectric converter elements each of which is associated with one of combinations of two different types of aperture masks and two different types of color filters and (ii) no-parallax pixels configured to guide an incident luminous flux to photoelectric converter elements without limitation.
Nikon Corporation
01/01/15
20150001469

Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures


Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials..
Taiwan Semiconductor Manufacturing Company, Ltd.
01/01/15
20150001468

Fets and methods for forming the same


Fets and methods for forming fets are disclosed. A structure comprises a substrate, a gate dielectric and a gate electrode.
Taiwan Semiconductor Manufacturing Company, Ltd.
01/01/15
20150001467

Semiconductor device having superlattice thin film laminated by semiconductor layer and insulator layer


Disclosed herein is a semiconductor device, including: a substrate; and a superlattice thin film formed on the substrate, wherein the superlattice thin film is configured such that insulator layers and semiconductor layers are alternately laminated on the substrate. The superlattice thin film is characterized in that, since it is formed by the lamination of a semiconductor layer and an insulator layer, the semiconductor layer and insulator layer constituting the superlattice thin film may be composed of a crystalline material, an amorphous material or a mixture thereof, and thus various kinds of materials for solving the mismatch in lattice constant between conventional superlattices made of different kinds of semiconductor materials can be used without limitations..
Research & Business Foundation Sungkyunkwan University
01/01/15
20150001398

Scintillating material and related spectral filter


A host lattice modified gos scintillating material and a method for using a host lattice modified gos scintillating material is provided. The host lattice modified gos scintillating material has a shorter afterglow than conventional gos scintillating material.
01/01/15
20150000970

Wiring board


A wiring board includes an insulating layer having a lower layer conductor on a lower surface thereof, a plurality of semiconductor element connection pads arranged in a lattice pattern in a semiconductor element mounting portion 1a having a quadrangular shape on the insulating layer, a via hole formed in the insulating layer below each of the semiconductor element connection pads, and a via conductor filled in the via hole and formed integrally with each of the semiconductor element connection pads. The wiring board includes a reinforcing via hole formed in the insulating layer in an outer region outside an arrangement region of the semiconductor element connection pads in corner portions of the semiconductor element mounting portion, and a reinforcing via conductor formed in the reinforcing via hole..
Kyocera Slc Technologies Corporation
01/01/15
20150000938

Fire suppression blanket


A blanket for fighting grass and scrub fires along a fire line includes a sheet of fire resistant material forming a lattice with multiple openings. The openings vary in size from larger openings along the sheet's front edge to smaller openings at the sheet's back edge.
12/25/14
20140379349

System and tightly coupling automatic speech recognition and search


Disclosed herein are systems, methods, and computer-readable storage media for performing a search. A system configured to practice the method first receives from an automatic speech recognition (asr) system a word lattice based on speech query and receives indexed documents from an information repository.
At&t Intellectual Property I, L.p.
12/25/14
20140377933

Method for producing a metal structure in a semiconductor substrate


A method for producing a metal structure in a semiconductor substrate includes: producing an opening in the rear side of the semiconductor substrate in the area of the metal structure to be produced, which extends to the front side layer structure; filling the opening at least partially with a metal so that a metal structure is created which extends from the rear side of the semiconductor substrate to the front side layer structure; masking the rear side of the semiconductor substrate for a trench process for exposing the metal structure in such a way that the trench mask includes a lattice structure in an area adjacent to the metal structure; producing an isolation trench adjacent to the metal structure, the metal structure acting as a lateral etch stop and the lattice structure being laterally undercut in the trench mask; and applying a sealing layer to the mask.. .
Robert Bosch Gmbh
12/25/14
20140377501

Shell segment of an aircraft and a production method


A segment and a method for producing such a segment, in particular for an aircraft, having a skin field and a skin field stiffening structure. The skin field and stiffening structure are made from fiber-reinforced plastic materials.
Airbus Operations Gmbh
12/25/14
20140376925

Method and system for modulating optical signals as high-dimensional lattice constellation points to increase tolerance to noise


A method modulates data for optical communication by first encoding the data using a forward error correction (fec) encoder to produce encoded data, which are encoded using a block encoder to produce block encoded data such that hamming distances between code words that represent the block encoded data are increased. The block encoded data are mapped to produce mapped data such that euclidian distances between the constellation points are increased.
Mitsubishi Electric Research Laboratories, Inc.
12/25/14
20140376584

Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations


An epitaxial structure for a iii-nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.. .
The Regents Of The University Of California
12/25/14
20140376307

Mult-level recording in a superattice phase change memory cell


A phase-change device capable of realizing a multi-level record in a superlattice phase-change memory cell in which a superlattice phase-change material is used as a recording film, and thereby achieving the reduction in power consumption and the capacity increase is provided. To a phase-change memory cell composed of gete/sb2te3 superlattice or snte/sb2te3 superlattice, a set pulse is once applied to form a set state (low resistance state).
National Institute Of Advanced Industrial Science And Technology
12/25/14
20140374924

Heterogeneous integration process incorporating layer transfer in epitaxy level packaging


Methods and structures for heterogeneous integration of diverse material systems and device technologies onto a single substrate incorporate layer transfer techniques into an epitaxy level packaging process. A planar substrate surface of multiple epitaxial areas of different materials can be heterogeneously integrated with a substrate material.
12/25/14
20140374834

Germanium structure, germanium fin field effect transistor structure and germanium complementary metal-oxide-semiconductor transistor structure


A germanium (ge) structure includes a substrate, a ge layer and at least a ge spatial structure. The ge layer is formed on the substrate, and a surface of the ge layer is a ge {110} lattice plane.
National Applied Research Laboratories
12/25/14
20140374798

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication


Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.. .
Taiwan Semiconductor Manufacturing Company, Ltd.
12/25/14
20140374701

Superlattice structures and infrared detector devices incorporating the same


Embodiments of strain-balanced superlattice infrared detector devices and their fabrication are disclosed. In one embodiment, an infrared detector device includes a first contact layer, and absorber superlattice region, a wider gap unipolar barrier region, and a second contact layer.
L-3 Communications Cincinnati Electronics Corporation
12/25/14
20140374364

Method for the sedimentation of sediment particles in a extracting diesel


The invention relates to a method and a device for the sedimentation of sediment particles in a method for extracting diesel oil from a liquid substance mixture moving in a circuit and comprising oil, hydrocarbon-containing residues and catalyst particles, by means of catalytic, pressureless depolymerisation (cpd). Sediment particles are removed from the substance mixture by guiding said mixture via a spiral-shaped guide arrangement.
Ecotoecfuel, Llc
12/25/14
20140373907

Four-junction quaternary compound solar cell and method thereof


A four-junction quaternary compound solar cell and a method thereof are provided. Forming a first subcell (100) with a first band gap, a lattice constant matching with the substrate on an inp grown substrate, forming a second subcell (200) with a second band gap bigger than the first band gap, a lattice constant matching with the substrate on the first subcell, forming a graded buffer layer (600) with a third band gap bigger than the second band gap on the second subcell, forming a third subcell (300) with a fourth band gap bigger than the third band gap, a lattice constant smaller than the substrate on the graded buffer layer, forming a fourth subcell (400) with a fifth band gap bigger than the fourth band gap, a lattice constant matching with the third subcell on the third subcell, and then forming the required four-junction solar cell then by succeeding process including removing the grown substrate, bonding a support substrate, forming electrodes, evaporating an anti-reflect film and so on.
Xiamen Sanan Optoelectronics Technology Co., Ltd.
12/25/14
20140373905

Metamorphic multijunction solar cell with surface passivation


A multijunction solar cell including an upper first solar subcell; a second solar subcell adjacent to the first solar subcell; a first graded interlayer adjacent to the second solar subcell; a third solar subcell adjacent to the first graded interlayer such that the third subcell is lattice mismatched with respect to the second subcell. A second graded interlayer is provided adjacent to the third solar subcell, and a lower fourth solar subcell is provided adjacent to the second graded interlayer, such that the fourth subcell is lattice mismatched with respect to the third subcell.
Emcore Solar Power, Inc.
12/25/14
20140373481

Lattice girder structure using innovative multiple joints for roof covering purposes


Roof truss system comprising tie rods, struts, knee rafters, and innovative connection joints to cover buildings, especially suitable for being implemented by plastic materials.. .
12/18/14
20140372444

Data clustering apparatus and method


Provided are a data clustering apparatus and method, which can rapidly and accurately cluster data. The data clustering apparatus includes an index discriminating unit discriminating an index corresponding to an input position of new data input to a space for data clustering, including a lattice-type segmented space having lattice unit spaces set with different indexes, and a clustering unit creating a new cluster in the discriminated index using the input new data as a representative value when a cluster is not created at the discriminated index..
Samsung Sds Co., Ltd.
12/18/14
20140371845

Valve suturing and implantation procedures


A prosthesis for implantation at a native semilunar valve includes a prosthetic distal valve, which includes a pliant material configured to collapse inwardly towards a longitudinal axis of the prosthesis during diastole, and to open outwardly during systole, and a distal fixation member configured to be positioned in a downstream artery of the subject. The apparatus also includes a proximal fixation member coupled to the distal fixation member, and configured to be positioned at least partially on a ventricular side of the native semilunar valve.
Medtronic Ventor Technologies, Ltd.
12/18/14
20140370688

Method for separating and transferring ic chips


A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed is provided. The method includes forming a mask pattern on a surface of the wafer, and separating each of the semiconductor devices or semiconductor integrated circuits along the mask pattern formed on the surface of the wafer.
Tokyo Electron Limited
12/18/14
20140370648

Heterojunction subcells in inverted metamorphic multijunction solar cells


Inverted metamorphic multijunction solar cells having a heterojunction middle subcell and a graded interlayer, and methods of making same, are disclosed herein. The present disclosure provides a method of manufacturing a solar cell using an mocvd process, wherein the graded interlayer is composed of (inxga1-x)y al1-yas, and is formed in the mocvd reactor so that it is compositionally graded to lattice match the middle second subcell on one side and the lower third subcell on the other side, with the values for x and y computed and the composition of the graded interlayer determined so that as the layer is grown in the mocvd reactor, the band gap of the graded interlayer remains constant at 1.5 ev throughout the thickness of the graded interlayer..
Emcore Solar Power, Inc.
12/18/14
20140369596

Correlating videos and sentences


A method of testing a video against an aggregate query includes automatically receiving an aggregate query defining participant(s) and condition(s) on the participant(s). Candidate object(s) are detected in the frames of the video.
Purdue Research Foundation
12/18/14
20140368303

Magnetization reversal


A method of magnetization reversal, time stable ferrimagnetic material, a product and a domain comprising said material, a system for magnetization reversal, and information storage. Therein, a ferrimagnetic material is one in which magnetic moments of the atoms on different sublattices are opposed, as in antiferromagnetism; however, in ferrimagnetic materials, the opposing moments are unequal and a spontaneous magnetization remains..
Radboud Universiteit Nijmegen
12/18/14
20140368186

Inspection apparatus and inspection method


In accordance with an embodiment, an inspection apparatus includes an electron beam applying unit, a voltage applying unit, a substantially flat component with a lattice pattern, and a first detector. The electron beam applying unit generates an electron beam and applies the electron beam to a sample at a first voltage.
Kabushiki Kaisha Toshiba
12/18/14
20140367958

Security feature having several components


A security feature has a luminescent component and a component camouflaging the luminescent component. A security feature has a luminescent component with at least one luminophore consisting of a doped host lattice, and a component camouflaging the luminescent component, wherein for camouflaging the luminescent component, relevant properties required for identifying the luminescent component are camouflaged by the camouflaging component by the relevant properties of the luminescent component.
Giesecke & Devrient Gmbh
12/18/14
20140367837

Semiconductor substrate and making the same


The present disclosure relates to a semiconductor substrate and a method for making the same. The semiconductor substrate includes an insulation layer, a first circuit layer, a second circuit layer, a plurality of conductive vias and a plurality of bumps.
Advanced Semiconductor Engineering, Inc.
12/18/14
20140367741

Semiconductor device


Provided is a semiconductor device comprising a substrate including a first area and a second area, first through third crystalline layers sequentially stacked on the first area and having first through third lattice constants, respectively, a first gate electrode formed on the third crystalline layer, fourth and fifth crystalline layers sequentially stacked on the second area and having fourth and fifth lattice constants, respectively, and a second gate electrode formed on the fifth crystalline layer, wherein the third lattice constant is greater than the second lattice constant, the second lattice constant is greater than the first lattice constant, and the fifth lattice constant is smaller than the fourth lattice constant.. .
Samsung Electronics Co., Ltd.


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Lattice topics: Semiconductor, Semiconductor Device, Semiconductor Material, Crystallin, Disconnect, Transistors, Replacement Gate, Semiconductor Devices, Dislocations, Dislocation, Image Processing, Coordinates, Surface Plasmon Polariton, Antenna Array

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