Follow us on Twitter
twitter icon@FreshPatents


Lattice patents

      

This page is updated frequently with new Lattice-related patent applications.




 Metal hydride alloys with improved rate performance patent thumbnailMetal hydride alloys with improved rate performance
Methods of preparing improved metal hydride alloy materials are provided. The alloys include a mixture of at least four of vanadium, titanium, nickel, chromium, and iron.
California Institute Of Technology


 Semiconductor structure with stress-reducing buffer structure patent thumbnailSemiconductor structure with stress-reducing buffer structure
A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 gpa and 2.0 gpa.
Sensor Electronic Technology, Inc.


 Superlattice structure patent thumbnailSuperlattice structure
A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s).
Sensor Electronic Technology, Inc.


 Photovoltaic cell and photovoltaic cell manufacturing method patent thumbnailPhotovoltaic cell and photovoltaic cell manufacturing method
A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.. .
Ricoh Company, Ltd.


 Combining complex flow manifold with three dimensional woven lattices as a thermal management unit patent thumbnailCombining complex flow manifold with three dimensional woven lattices as a thermal management unit
The present invention is directed to a manifold for directing cooling fluid and/or gas to a heat exchanger in a flow configuration designed to optimize heat transfer from the heat exchanger. The manifold can take many different forms such as a layered construction with distributed inlet paths, local outlet paths, a central collection changer and a path for fluid removal.
The Johns Hopkins University


 Latticed patient hoisting device for hospital bed patent thumbnailLatticed patient hoisting device for hospital bed
A latticed patient-hoisting device for a hospital bed and methods of its use for lifting, moving, turning and positioning of hospital patients. Embodiments of the device have a plurality of vertical and parallel straps running parallel to the patient's body from head to feet and a plurality of horizontal straps perpendicular to the vertical straps.

 Woven foldable catheter patent thumbnailWoven foldable catheter
Apparatus, consisting of a catheter having a distal end and a predefined outer diameter. The apparatus also has a plurality of elastic filaments, each filament having at least one electrode fixed thereto and having two ends fixed within the catheter distal end to hold the filament as a loop.
Biosense Webster (israel) Ltd.


 Customizable pressure offloading cushioning device patent thumbnailCustomizable pressure offloading cushioning device
The subject invention is a device intended for use where support or restriction of motion of a body part is desired. The subject of the present invention is the formation of a network of lattice intrusions into the matrix of the device so that elements of the lattice can be removed to form a depression in the matrix of the device that conforms to the anatomy of the region that is being supported and positioned while offloading pressure..
Global Medical Foam, Inc.


 Light-emitting device patent thumbnailLight-emitting device
An object of the present invention is to provide a light-emitting device comprising: a substrate, a first light-emitting semiconductor stack having a first transverse width, the first light-emitting semiconductor stack comprising a first active layer emitting a first radiation of a first dominant wavelength during operation; a second light-emitting semiconductor stack having a second transverse width less than the first transverse width and comprising a second active layer emitting a second radiation of a second dominant wavelength shorter than the first dominant wavelength during operation; and a first conductive connecting structure between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack, wherein the first conductive connecting structure is lattice-mismatched to the first active layer and to the second active layer, the first light-emitting semiconductor stack is between the substrate and the second light-emitting semiconductor stack.. .
Epistar Corporation


 P-side layers for short wavelength light emitters patent thumbnailP-side layers for short wavelength light emitters
A light emitting device includes a p-side heterostructure having a short period superlattice (spsl) formed of alternating layers of alxhighga1-xhighn doped with a p-type dopant and alxlowga1-xlown doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the spsl has a thickness of less than or equal to about six bi-layers of algan..
Palo Alto Research Center Incorporated


Tandem solar cell

This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising ge or gaas; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising ingap:te, and a first alloy layer comprising alxga(1−x)as and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.. .
Epistar Corporation

P-compensated and p-doped superlattice infrared detectors

Barrier infrared detectors configured to operate in the long-wave (lw) infrared regime are provided. The barrier infrared detector systems may be configured as pin, pbp, barrier and double heterostructrure infrared detectors incorporating optimized p-doped absorbers capable of taking advantage of high mobility (electron) minority carriers.
California Institute Of Technology

Semiconductor device including field effect transistors

A semiconductor device includes a fin structure on a substrate and extending in a first direction, a gate electrode crossing over the fin structure, source/drain regions on the fin structure at opposite sides of the gate electrode, and a barrier layer between the fin structure and each of the source/drain regions. The fin structure includes a material having a lattice constant different from that of the substrate, the fin structure, the source/drain regions, and the barrier layer include germanium, and a germanium concentration in the barrier layer is greater than that in the fin structure and less than a maximum germanium concentration in each of the source/drain regions..

Semiconductor device

When formed to have a lattice pattern, trenches are deeper at the portions thereof corresponding to the vertices of the lattice pattern than at the portions thereof corresponding to the sides. Such variations in the depths of trenches may disadvantageously result in variations in the gate threshold voltages (vth).
Fuji Electric Co., Ltd.

Multichannel devices with improved performance and methods of making the same

A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures.
Northrop Grumman Systems Corporation

Semiconductor devices with superlattice layers providing halo implant peak confinement and related methods

A semiconductor device may include a semiconductor substrate, and a plurality of field effect transistors (fets) on the semiconductor substrate. Each fet may include a gate, spaced apart source and drain regions on opposite sides of the gate, upper and lower vertically stacked superlattice layers and a bulk semiconductor layer therebetween between the source and drain regions, and a halo implant having a peak concentration vertically confined in the bulk semiconductor layer between the upper and lower superlattices..
Atomera, Incorporated

Semiconductor devices with superlattice and punch-through stop (pts) layers at different depths and related methods

A semiconductor device may include a semiconductor substrate and first transistors having a first operating voltage. Each first transistor may include a first channel and a first punch-through stop (pts) layer in the semiconductor substrate, and the first pts layer may be at a first depth below the first channel.
Atomera, Incorporated

Horizontal gate all around and finfet device isolation

Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hgaa) isolation and fin field effect transistor (finfet) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate.
Applied Materials, Inc.

Display substrate, its manufacturing method and display device

The present disclosure provides a display substrate, its manufacturing method, and a display device. The method includes a step of forming a plurality of tfts.
Boe Technology Group Co., Ltd.

Ultra low noise materials and devices for cryogenic superconductors and quantum bits

Materials, devices, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence.
Lawrence Livermore National Security, Llc

Applications of shape memory polymers on an input device

An input device including a housing, a cover plate, and a shape-memory polymer (smp) disposed between the cover plate and the housing. The smp being a rectangular flat lattice structure formed into a cylinder, the cylinder having a top portion and a bottom portion, where the top portion is coupled to the cover plate, and where the bottom portion is coupled to the housing.
Logitech Europe S.a.

Hydrogen storage alloy, hydrogen storage alloy electrode, secondary battery, and producing hydrogen storage alloy

Provided is a hydrogen storage alloy which is characterized in that two or more crystal phases having different crystal structures are layered in a c-axis direction of the crystal structures. The hydrogen storage alloy is further characterized in that a difference between a maximum value and a minimum value of a lattice constant a in the crystal structures of the laminated two or more crystal phases is 0.03 Å or less..
National Institute Of Advanced Industrial Science And Technology

Apparatus and inverting polymer latices

Disclosed herein are inversion systems and methods of diluting w/o lattices including about 10 wt % to 80 wt % of a water soluble polymer. Using the inversion systems and methods described herein, dilution of w/o lattices is carried out in a single step to form dilute lattices having 10,000 ppm or less polymer; the dilute lattices form polymer solutions with no further addition of mixing force or water.
Ecolab Usa Inc.

Cutting tool made by additive manufacturing

A cutting tool made by an additive manufacturing process is disclosed. The cutting tool has an exterior surface and an enclosed interior cavity defined by one or more inwardly facing surfaces.
Kennametal Inc.

Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell

A multijunction solar cell includes an upper first solar subcell having a first band gap, a second solar subcell having a second band gap smaller than the first band gap, and a first graded interlayer composed of (inxga1-x)yal1-yas adjacent to the second solar subcell. The first graded interlayer has a third band gap greater than the second band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the second subcell and less than or equal to that of the third subcell, wherein 0<x<1 and 0<y<1, and x and y are selected such that the band gap of the first graded interlayer remains constant throughout its thickness at 1.5 ev.
Solaero Technologies Corp.

Method of fabricating semiconductor device

A method of fabricating a semiconductor device includes forming an active pattern protruding from a substrate, forming a liner layer on the active pattern, forming a sacrificial gate pattern on the liner layer and crossing the active pattern, forming source/drain regions on the active pattern and at both sides of the sacrificial gate pattern, forming an interlayer insulating layer to cover the source/drain regions, forming capping insulating patterns on the interlayer insulating layer to expose the sacrificial gate pattern, and removing the sacrificial gate pattern and the liner layer by an etching process using the capping insulating patterns as an etch mask to form a gap region exposing the active pattern. The active pattern includes a material having a lattice constant greater than a lattice constant of the substrate, and the capping insulating patterns include a material having an etch selectivity with respect to the liner layer..

Semiconductor device having strain-relaxed buffer layer and manufacturing the same

A semiconductor device includes a substrate, a strain-relaxed buffer layer on the substrate, at least one well in the strain-relaxed buffer layer, a first channel layer on the strain-relaxed buffer layer, and a second channel layer on the well. A lattice constant of material constituting the first well is less than a lattice constant of the material constituting the strain-relaxed buffer layer, but a lattice constant of material constituting the second well is greater than the lattice constant of the material constituting the strain-relaxed buffer layer..
Samsung Electronics Co., Ltd.

Semiconductor device having strained channel layer and manufacturing the same

Semiconductor devices are provided. The semiconductor devices include active fins including a buffer layer disposed on a substrate and a channel layer disposed on the buffer layer and having a first second lattice constant higher than a lattice constant of the buffer layer, a gate structure covering the channel layer and intersecting the active fins, sidewall spacers disposed on both sidewalls of the gate structure, and capping layers disposed to contact lower surfaces of the sidewall spacers and having a width substantially the same as a width of the lower surfaces of the sidewall spacers..
Samsung Electronics Co., Ltd.

Image generation device and operation support system

An image generation device generates an output image based on input images captured by three cameras. An input image portion corresponding to an overlap region of imaging ranges of the cameras forms a lattice pattern in the output image.
Sumitomo Heavy Industries, Ltd.

Microstructured optical fibre with selectively enlarged spaces of reduced refraction index, especially for the generation of nonlinear effects and stress measurements

Microstructured optical fibre with selectively enlarged spaces of reduced refraction index, especially for the generation of non-linear effects and stress measurements with a ring configuration of spaces, located around a cladded core, where the spaces demonstrate cross-section shape close to circle and decreased diffraction index, especially for the generation of non-linear effects and stress measurements, made of glass, preferably of silica glass or polymer and are located in nodes of hexagonal lattice with distances between the lattice nodes equal to the lattice constant, in which, around a single-mode core, there are, at least two rings with spaces of decreased diffraction index, filled with gas or fluid or a polymer, where the diameter of every-second space with decreased diffraction index in, at least, one ring, is enlarged to be lower from the double lattice constant, while the diameters d of all the enlarged spaces with decreased diffraction index are similar in size and the diameters d of non enlarged spaces with decreased diffraction index are close in size and lower from the lattice constant and the ratio of the diameter d of non enlarged space to the lattice constant is within the range from 0.30 to 0.45.. .
Polskie Centrum Fotoniki I SwiatlowodÓw

Photoluminescent semiconductor nanocrystal-based luminescent solar concentrators

The present disclosure describes luminescent solar concentrators that include photoluminescent nanoparticles. The photoluminescent nanoparticles include a semiconductor nanocrystal that sensitizes the luminescence of a defect.
University Of Washington Through Its Center For Commericalization

Illumination of dense urban areas by light redirecting sine wave panels

The presented system is a cost effective and energy saving mean of transmitting sunlight downward into a narrow alleys and streets, by using a day-lighting guiding acrylic panel that is capable of changing the direction and distribution of the incident light. The core of the proposed daylight guidance system is made up of light transmission panels that have sine wave shaped cross-section so that the panel functions as an optical diffusor perpendicular to the optical axis.
Science And Technology Development Fund (stdf)

Tread for steel-pan stairways

A tread for a steel-pan staircase. The tread includes a lattice structure comprising a top side, a left side, and a right side.
Progressive Safety Solutions, Llc

Aircraft seat

A seat for a vehicle includes a seat pan, having a seat pan front edge and a seat pan rear edge, a backrest, having a backrest top edge and a backrest bottom edge, wherein the backrest bottom edge is articulately disposed adjacent to the seat pan rear edge, and a back support lattice disposed adjacent to the backrest. At least one of the seat pan and the backrest is configurable into a plurality of positions.
Bombardier Inc.

Footwear with lattice midsole and compression insert

An article of footwear includes an upper, a midsole and an outsole. The midsole is connected to the upper and to the outsole.
Under Armour, Inc.

Midsole lattice with hollow tubes for footwear

An article of footwear includes an upper and a midsole connected to upper. The midsole includes a lattice structure with a plurality of laths.
Under Armour, Inc.

Semiconductor light emitting device

A light emitting device is provided. The light emitting device includes a substrate, an n type semiconductor layer formed on the substrate, an active layer, an electron-blocking layer, and a p type semiconductor layer formed on the electron-blocking layer.
National Chiao Tung University

Fin field effect transistor including a strained epitaxial semiconductor shell

A semiconductor fin including a single crystalline semiconductor material is formed on a dielectric layer. A semiconductor shell including an epitaxial semiconductor material is formed on all physically exposed surfaces of the semiconductor fin by selective epitaxy, which deposits the semiconductor material only on semiconductor surfaces and not on dielectric surfaces.
International Business Machines Corporation

Application of super lattice films on insulator to lateral bipolar transistors

A lateral bipolar junction transistor including a base region on a dielectric substrate layer. The base region includes a layered stack of alternating material layers of a first lattice dimension semiconductor material and a second lattice dimension semiconductor material.
International Business Machines Corporation

Body-tied, strained-channel multi-gate device and methods

A fin-fet or other multi-gate transistor is disclosed. The transistor comprises a semiconductor substrate having a first lattice constant, and a semiconductor fin extending from the semiconductor substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.

Fin field effect transistor including a strained epitaxial semiconductor shell

A semiconductor fin including a single crystalline semiconductor material is formed on a dielectric layer. A semiconductor shell including an epitaxial semiconductor material is formed on all physically exposed surfaces of the semiconductor fin by selective epitaxy, which deposits the semiconductor material only on semiconductor surfaces and not on dielectric surfaces.
International Business Machines Corporation

Seed layer structure for growth of iii-v materials on silicon

The present disclosure relates to a structure and method of forming a gan film on a si substrate that includes an additional or second high temperature (ht) aln seed layer, introduced for reducing the tensile stress of gan on a si substrate. The second ht aln seed layer is disposed over a first ht aln seed layer, and has a low v/iii ratio compared to the first ht aln seed layer.
Taiwan Semiconductor Manufacturing Co., Ltd.

Least action nuclear processes and materials

Methods for loading hydrogen and hydrogen isotopes into a metal hydride lattice are described. Additionally, methods for using such a lattice to stimulate nuclear transformations, whether for energy production, specific isotope production or specific isotope consumption are described.

Lattice finalization device, pattern recognition device, lattice finalization method, and computer program product

According to an embodiment, a lattice finalization device finalizes a portion of a lattice that is generated by pattern recognition with respect to a signal on a frame-by-frame basis in chronological order. The device includes a detector and a finalizer.
Kabushiki Kaisha Toshiba

Methods and systems for using state vector data in a state machine engine

A state machine engine includes a state vector system. The state vector system includes an input buffer configured to receive state vector data from a restore buffer and to provide state vector data to a state machine lattice.
Micron Technology, Inc.

Microstructured multicore optical fibre (mmof), a device and the fabrication a device for independent addressing of the cores of microstructured multicore optical fibre

Microstructured multicore optical fibre with a microstructure area, in which, at least two basic cells are embedded, where each of them contains a core, preferably made of glass, specifically including doped silica glass or polymer, together with the surrounding it longitudinal areas with lower refraction index vs. That of the cladding, which areas may adopt the shape of holes, filled with gas, in particular with the air or a fluid or a polymer or spaces of another glass with doping allowing to reduce refractive index (further referred to as holes), embedded in a matrix of glass, in particular of silica glass or polymer.
Inphotec Sp. O. O.

Pipe mat and using same for collecting fluids draining from drill pipe

A pipe mat for use with a tubing tray for receiving, organizing and storing drill pipe tripped out of a drill string on a drilling rig has a plurality of substantially parallel and spaced-apart support rails to form a plurality of drain channels disposed between adjacent pair of support rails. A plurality of substantially parallel and spaced-apart nub rails is disposed on the plurality of support rails.
Katch Kan Holdings Ltd.

Container comprising a treatment agent and the production thereof

Container having a wall (2) which forms a receiving space (3) and is delimited from a surrounding area (4), wherein a treatment agent, in particular a desiccant, is received in the receiving space (3). The wall (2) comprises a lattice (5, 5′) having lattice openings (6), through which the treatment agent can come into contact with a substance in the surrounding area (4).
Sanner Gmbh

Golf club face plates with internal cell lattices

Embodiments of golf club face plates with internal cell lattices are presented herein. Other examples and related methods are also disclosed herein..
Karsten Manufacturing Corporation

Nonaqueous electrolyte secondary battery

Provided is a nonaqueous electrolyte secondary battery that includes a laminate film exterior container housing an electrode body and an electrolyte solution. In the nonaqueous electrolyte secondary battery, the electrode body includes a positive electrode, a negative electrode, and a separator.
Automotive Energy Supply Corporation

Light-emitting device and fabricating light-emitting device

A light-emitting device includes a transparent substrate, a thin line structure formed on a portion of the transparent substrate and including thin lines which are formed in a stripe or lattice pattern, a transparent conductive layer formed on the portion of the transparent substrate where the thin line structure is formed, a light-emitting functional layer formed on a portion of the transparent conductive layer located in a light-emitting region, an electrode positioned on the light-emitting functional layer on an opposite side of the transparent conductive layer in the light-emitting region, and a sealing substrate positioned over the electrode and attached to the transparent substrate via an adhesive. The adhesive is applied to the transparent substrate such that the transparent conductive layer is not interposed between the adhesive and the transparent substrate, and that the adhesive is formed around the light-emitting region in plan view..
Toppan Printing Co., Ltd.

Magnetoresistive element

A magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of srtio3, srfeo3, laalo3, ndcoo3, or bn; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.. .
Kabushiki Kaisha Toshiba

Epitaxial devices

Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate.
Micron Technology, Inc.

Semiconductor substrate, semiconductor device and manufacturing semiconductor substrate

A semiconductor substrate, a semiconductor device and a manufacturing method of the semiconductor substrate are provided. The semiconductor substrate comprises a first semiconductor layer and a second semiconductor layer located on the first semiconductor layer.
Enkris Semiconductor, Inc.

Device with transparent and higher conductive regions in lateral cross section of semiconductor layer

A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells.
Sensor Electronic Technology, Inc.

Semiconductor devices including fin bodies with varied epitaxial layers

A semiconductor device can include a substrate and a fin body that protrudes from a surface of the substrate. The fin body can include a lower portion having a first lattice structure and an upper portion, separated from the lower portion by a boundary, the upper portion having a second lattice structure that is different than the first lattice structure.
Samsung Electronics Co., Ltd.

Integrated multichannel and single channel device structure and making the same

An integrated circuit is disclosed that includes a single channel device having a first portion of a single shared heterostructure overlying a substrate structure in a single channel device area, and a gate contact that is in contact with the first portion of the single shared heterostructure. The integrated circuit also includes a multichannel device comprising a second portion of the single shared heterostructure overlying the substrate structure in a multichannel device area, a barrier layer overlying the second portion of the single shared heterorstructure, and a superlattice structure overlying the barrier layer, the superlattice structure comprising a plurality of heterostructures.
Northrop Grumman Systems Corporation

Active regions with compatible dielectric layers

A method to form a semiconductor structure with an active region and a compatible dielectric layer is described. In one embodiment, a semiconductor structure has a dielectric layer comprised of an oxide of a first semiconductor material, wherein a second (and compositionally different) semiconductor material is formed between the dielectric layer and the first semiconductor material.

Audio signal encoder

An apparatus comprising: a vector generator configured to generate at least one vector of parameters defining at least one audio signal; a lattice vector quantizer configured to sort the at least one vector of parameters according to an ordering of at least one vector absolute tuples to generate an associated at least one ordered vector of parameters; the lattice vector quantizer configured to select from a list of leader classes at least one potential code vector; the lattice vector quantizer configured to determine a distance between the at least one potential code vector and the at least one ordered vector of parameters; the lattice vector quantizer configured to determine at least one leader class associated with a potential code vector which generates the smallest associated distance; the lattice vector quantizer configured to transpose the at least one leader class to generate an output lattice quantized codevector.. .
Nokia Technologies Oy

System packing for the spaced packing of elongated object and corresponding packing method

Packing for the spaced packing of elongated bar-like or rod-like articles, in particular of rods (16) that are stored in a packing sleeve (1) that is open on at least one end while maintaining a mutual radial separation between them, wherein on the opening (5) of the packing sleeve (1) a multi-part lattice support (10) consisting of at least one lattice-like top part (7) and at least one lattice-like bottom part (8) that is detachably connected with it can be placed, that the rods (16) with their base-side ends extend through the aligned lattice openings (14a, 14b) of the top and bottom part (7, 8) and the at least one bottom part (8) is detachably connected with the top part (7) and can slide in the interior of the packing sleeve.. .
Rose Plastic Ag

Barriers, injectors, tunnel-junctions, and cascaded led junctions

Optoelectric devices that comprise a semiconductor superlattice heterostructure. One or more individual layers within the semiconductor superlattice heterostructure can further comprise layers of differing thicknesses.
Terahertz Device Corporation

Solar cell and manufacturing method thereof

A solar cell includes a semiconductor substrate of a first conductivity; a pillar-shaped structure constituted by a semiconductor of the first conductivity, the pillar-shaped structure being formed on the semiconductor substrate; a superlattice layer including a barrier layer and a quantum structure layer that are alternately deposited on a side wall of the pillar-shaped structure, the quantum structure layer being constituted by a material having a smaller energy bandgap than that of the barrier layer, the quantum structure layer including a wurtzite type crystal part and a zinc blende type crystal part that are alternately arranged along an axial direction of the pillar-shaped structure; and a semiconductor layer of a second conductivity that is formed so as to surround the superlattice layer, the second conductivity being an opposite conductivity to that of the first conductivity.. .
Fujitsu Limited

Multi-layer fin field effect transistor devices and methods of forming the same

Multi-layer fin field effect transistor devices and methods of forming the same are provided. The devices may include a fin shaped channel structure on a substrate.

Semiconductor device

A semiconductor device is disclosed, which includes: at least one a device layer being a crystallized layer for example including: a superlattice layer and/or a layer of group iii-v semiconductor materials; and a passivation structure comprising one or more layers wherein at least one layer of the passivation structure is a passivation layer grown in-situ in a crystallized form on top of the device layer, and at least one of the one or more layers of the passivation structure includes material having a high density of surface states which forces surface pinning of an equilibrium fermi level within a certain band gap of the device layer, away from its conduction and valence bands.. .
Semi Conductor Devices-an Elbit Systems-rafael Partnership

Method to induce strain in finfet channels from an adjacent region

Methods and structures for forming strained-channel finfets are described. Fin structures for finfets may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate.
Stmicroelectronics, Inc.

Integrated electric field processor emitter matrix & electric field processor emitters & mobile emitters for use in a field matrix

A plurality of field emitting conductors placed in various matrix, mesh, grid, lattice patterns, and on board pluralities of autonomous vehicular like on wire or unteathered free ranging micro-robots wherein the field emitters are charged and modulated with a plurality of timing algorithms and electric circuitry which produce a three dimensional electric field shape or a plurality of shapes or plurality of duplicate electric field shapes which are animated or moved through space in a sequence, in unison or in wave-like patterns or evolved to different shapes or quickly changed to a new shape. The field emitter voltage can be raised or lowered to depict, render or facilitate motion in a direction or its opposite charge direction.

Touch tag recognizable through capacitive touch panel, information recognition method therefor and information providing method using same

The present invention provides a touch tag having a conductivity pattern corresponding to a touch point of a capacitive touch panel. A capacitive touch tag according to the present invention includes: a substrate; a plurality of capacitive touch points which are formed on the substrate and are arranged at arbitrary positions on a virtual lattice corresponding to a touch input sector of a capacitive touch panel of a personal information device; a conductive wire for connecting the capacitive touch points; and an electric charge transfer unit for transferring electric charges to the capacitive touch points through the conductive wire.
Korea Institute Of Industrial Technology

Preparation method and application of sodium barium fluoroborate birefringent crystal

A preparation method and application of a na3ba2(b3o6)2f birefringent crystal, the crystal having a chemical formula of na3ba2(b3o6)2f, and belonging to a hexagonal crystal system, the space group being p63/m, and the lattice parameters comprising a=7.3490(6) Å, c=12.6340(2) Å, v=590.93(12) Å3, z=2; the crystal is used for an infrared/deep ultraviolet waveband, and is an uniaxial negative crystal, ne<no, the transmission range being 175-3,350 nm, the birefringence of 0.090 (3,350 nm)-0.240 (175 nm), and the crystal being grown by employing a melting method or a flux method; the crystal prepared via the method has a short growth cycle, high crystal quality and large crystal size, is easy to grow, cut, polish and store, is stable in the air, and difficult to deliquesce, and can be used for preparation of various polarization beam polarization beam splitter prism and infrared/deep ultraviolet waveband optical communication elements.. .
Xinjiang Technical Institute Of Physics And Chemistry, Chinese Academy Of Science

Golf club head

A golf club head includes a body defining an interior cavity. The body includes a sole positioned at a bottom portion of the golf club head, a crown positioned at a top portion, and a skirt positioned around a periphery between the sole and crown.
Taylor Made Golf Company, Inc.

In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctions

Embodiments are directed to a magnetic tunnel junction (mtj) memory cell that includes a reference layer formed from a perpendicular magnetic anisotropy (pma) reference layer and an interfacial reference layer. The mtj further includes a free layer and a tunnel barrier positioned between the interfacial reference layer and the free layer.
International Business Machines Corporation

Heterostructures for semiconductor devices and methods of forming the same

Various heterostructures and methods of forming heterostructures are disclosed. A method includes removing portions of a substrate to form a temporary fin protruding above the substrate, forming a dielectric material over the substrate and over the temporary fin, removing the temporary fin to form a trench in the dielectric material, the trench exposing a portion of a first crystalline material of the substrate, forming a template material at least partially in the trench, the template material being a second crystalline material that is lattice mismatched to the first crystalline material, forming a barrier material over the template material, the barrier material being a third crystalline material, forming a device material over the barrier material, the device material being a fourth crystalline material, forming a gate stack over the device material, and forming a first source/drain region and a second source/drain region in the device material..
Taiwan Semiconductor Manufacturing Company, Ltd.

System and advanced turn-taking interactive spoken dialog systems

Disclosed herein are systems, methods, and non-transitory computer-readable storage media for advanced turn-taking in an interactive spoken dialog system. A system configured according to this disclosure can incrementally process speech prior to completion of the speech utterance, and can communicate partial speech recognition results upon finding particular conditions.
At&t Intellectual Property I, L.p.

Surface vehicle trajectory planning systems, devices, and methods

A planning module for a water surface vehicle can determine a vehicle trajectory that avoids one or more moving obstacles, such as civilian marine vessels, by performing a lattice-based heuristic search of a state space for the surface vehicle and selecting control action primitives from a predetermined set of control action primitives based on the search. The planning module can separate a travel space into a plurality of regions and can independently scale the control action primitives in each region based on the moving obstacles therein.
University Of Maryland, College Park

Cvd-coated article and cvd process of making the same

A cvd-coated article has a substrate with a substrate surface and a cvd coating scheme on the substrate surface. The coating scheme includes a coating layer of ti1-xmex nitride wherein me is selected from the group of zirconium or hafnium or a mixture of zirconium and hafnium, and x equals between about 0.1 and about 0.9.
Kennametal Inc.

Multi-functional sensor assembly

A sensor assembly has a flexible body, and a plurality of fiber bragg gratings (fbg) sensor inserted into the body, the fbg sensor includes an optical fiber extending in a length direction of the body and a plurality of lattices disposed in the optical fiber, a variation of a wavelength spectrum of light, caused by a variation of an interval of the plurality of lattices, is detected, and at least one of force information applied to the body and temperature information of the body is extracted together with refraction information of the body.. .
Korea Institute Of Science And Technology

Connector

A lattice (29) is provided on a rear surface of a connector main body (10) and defines a plurality of insertion openings (28). The lattice (29) includes first and second walls (31, 32) extending parallel to each other in the same direction and third walls (33) intersecting the first and second walls (31, 32,).
Sumitomo Wiring Systems, Ltd.

Mocvd growth of highly mismatched iii-v cmos channel materials on silicon substrates

Embodiments of the present disclosure generally relate to a semiconductor device including layers of group iii-v semiconductor materials. In one embodiment, the semiconductor device includes a phosphorous containing layer deposited on a silicon substrate, wherein a lattice mismatch between the phosphorous containing layer and the silicon substrate is less than 5%, a group iii-v compound nucleation layer deposited on the phosphorous containing layer at a first temperature, the group iii-v compound nucleation layer having a first thickness, a group iii-v compound transition layer deposited on the group iii-v compound nucleation layer at a second temperature higher than the first temperature, the group iii-v compound transition layer having a second thickness larger than the first thickness, and the group iii-v compound nucleation layer is different from the group iii-v compound transition layer, and an active layer deposited on the group iii-v compound transition layer..
Applied Materials, Inc.

Semiconductor device including field effect transistors

A semiconductor device includes a buffer layer on a substrate, the buffer layer having a lattice constant different from that of the substrate, a fin structure upwardly protruding from the buffer layer, a gate electrode crossing over the fin structure, a cladding layer at a side of the fin structure and covering a top surface and sidewalls of the fin structure, and an interfacial layer between the cladding layer and the fin structure, the interfacial layer including a same element as the buffer layer.. .

Tensile source drain iii-v transistors for mobility improved n-mos

An n-mos transistor device and method for forming such a device are disclosed. The n-mos transistor device comprises a semiconductor substrate with one or more replacement active regions formed above the substrate.
Intel Corporation

Multichannel devices with gate structures to increase breakdown voltage

A transistor device is provided that includes a base structure and a superlattice structure that overlies the base structure. The superlattice structure comprises a multichannel ridge having sides that extend to the base structure.
Northrop Grumman Systems Corporation

Hybrid finfet/nanowire sram cell using selective germanium condensation

A semiconductor device including a pfet and an nfet where: (i) the gate and conductor channel of the pfet are electrically insulated from a buried oxide layer; and (ii) the conductor channel of the nfet is in the form of a fin extending upwards from, and in electrical contact with, the buried oxide layer. Also, a method of making the pfet by adding a fin structure extending from the top surface of the buried oxide layer, then condensing germanium locally into the lattice structure of the lower portion of the fin structure, and then etching away the lower portion of the fin structure so that it becomes a carrier channel suspended above, and electrically insulated from the buried oxide layer..
International Business Machines Corporation



Lattice topics:
  • Semiconductor
  • Semiconductor Device
  • Semiconductor Material
  • Crystallin
  • Disconnect
  • Transistors
  • Replacement Gate
  • Semiconductor Devices
  • Dislocations
  • Dislocation
  • Image Processing
  • Coordinates
  • Surface Plasmon Polariton
  • Antenna Array


  • Follow us on Twitter
    twitter icon@FreshPatents

    ###

    This listing is a sample listing of patent applications related to Lattice for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Lattice with additional patents listed. Browse our RSS directory or Search for other possible listings.


    1.6775

    file did exist - file did put4382

    75 - 1 - 101