Popular terms

Lattice topics
Semiconductor
Semiconductor Device
Semiconductor Material
Crystallin
Disconnect
Transistors
Replacement Gate
Semiconductor Devices
Dislocations
Dislocation
Image Processing
Coordinates
Surface Plasmon Polariton
Antenna Array

Follow us on Twitter
twitter icon@FreshPatents

Web & Computing
Cloud Computing
Ecommerce
Search patents
Smartphone patents
Social Media patents
Video patents
Website patents
Web Server
Android patents
Copyright patents
Database patents
Programming patents
Wearable Computing
Webcam patents

Web Companies
Apple patents
Google patents
Adobe patents
Ebay patents
Oracle patents
Yahoo patents

[SEARCH]

Lattice patents



      

This page is updated frequently with new Lattice-related patent applications.




Date/App# patent app List of recent Lattice-related patents
05/19/16
20160143133 
 Printed wiring board, semiconductor device and printed circuit board patent thumbnailnew patent Printed wiring board, semiconductor device and printed circuit board
A printed wiring board includes conductive layers laminated with insulator layers interposed. A land group including a plurality of lands arranged with intervals between each other, is formed in a rectangular region on a surface layer, among the plurality of conductive layers, when viewed in a direction perpendicular to the surface layer.
Canon Kabushiki Kaisha


05/19/16
20160141836 
 Monolithic nano-cavity light source on lattice mismatched semiconductor substrate patent thumbnailnew patent Monolithic nano-cavity light source on lattice mismatched semiconductor substrate
An optoelectronic light emission device is provided that includes a gain region of at least one type iii-v semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type iii-v semiconductor layer has a nanoscale area using nano-cavities.
International Business Machines Corporation


05/19/16
20160141453 
 Lattice-matched light emitting element patent thumbnailnew patent Lattice-matched light emitting element
A light emitting element and its manufacturing method are disclosed. A larger end face of a gallium nitride pyramid contacts with a mounting face of a gallium nitride layer disposed on a substrate, with c-axes of the gallium nitride layer and the gallium nitride pyramid coaxial to each other, and with m-planes of the gallium nitride layer and the gallium nitride pyramid parallel to each other.
National Sun Yat-sen University


05/19/16
20160141448 
 Monolithic nano-cavity light source on lattice mismatched semiconductor substrate patent thumbnailnew patent Monolithic nano-cavity light source on lattice mismatched semiconductor substrate
An optoelectronic light emission device is provided that includes a gain region of at least one type iii-v semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type iii-v semiconductor layer has a nanoscale area using nano-cavities.
International Business Machines Corporation


05/19/16
20160141413 
 Semiconductor devices patent thumbnailnew patent Semiconductor devices
Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice constant of the substrate, a first gate electrode on the channel layer, a first source region of a first conductivity type at a first side of the first gate electrode, a first body region of a second conductivity type under the first source region and contacting the first source region, a first drain region of the first conductivity type disposed at a second side of the first gate electrode, a first drift region of the first conductivity type under the first drain region and contacting the first drain region, and a first stud region in the channel layer and the first drift region. The first stud region has an impurity concentration higher than an impurity concentration of the first drift region..

05/19/16
20160141374 
 Aspect ratio trapping and lattice engineering for iii/v semiconductors patent thumbnailnew patent Aspect ratio trapping and lattice engineering for iii/v semiconductors
A method of forming a semiconductor structure. The method may include; forming a hardmask on a strained semiconductor, the strained semiconductor is on a substrate; relaxing edges of the strained semiconductor by forming first trenches through the hardmask and through the strained semiconductor; forming barrier layers in the first trenches; forming a second trench between adjacent barrier layers; and growing a second semiconductor layer on the strained semiconductor having relaxed edges..
International Business Machines Corporation


05/19/16
20160139019 
 Method and integrated device for analyzing liquid flow and liquid-solid interface interaction patent thumbnailnew patent Method and integrated device for analyzing liquid flow and liquid-solid interface interaction
An integrated circuit (ic) chip with a lab-on-a-chip, a method of manufacturing the lab-on-a-chip and a method of using the lab-on-a-chip for fluid flow analysis in physical systems through combination with computer modeling. The lab-on-a-chip includes cavities in a channel layer and a capping layer, preferably transparent, covering the cavities.
International Business Machines Corporation


05/19/16
20160138369 
 Apparatus and  cultivating a downhole surface patent thumbnailnew patent Apparatus and cultivating a downhole surface
Methods and apparatus for cultivating a surface of a wall of a subterranean well bore, conduit or cable by scraping and furrowing the surface using a string hoistable shaft carrying a flexible arrangement of a laterally extendable and retractable arcuate engagement linkage dragging a cutter and scraper member, wherein said engagement linkage arcuately engages and aligns the cutter and scraper member during one or more scraping engagements: along said surface and longitudinal to a well axis to form and use said furrow, across said surface and transverse to said well axis using a filament linkage to form and use said furrow, or along and across said surface and longitudinal and transverse to said well axis to form and use a lattice of said furrows, separating a plane of the surface into a plurality of planes that comprise separate surface regions, usable by an ancillary apparatus or a spreadable substance.. .

05/19/16
20160136856 
 Method of making a golf ball with lattice reinforced layer patent thumbnailnew patent Method of making a golf ball with lattice reinforced layer
Methods of making a golf ball that includes a lattice reinforced layer, which is a layer made of at least two materials with different properties, includes various injection and compression molding steps. In some embodiments, the lattice reinforced layer is manufactured using a shutoff molding technique so that the entire lattice reinforced layer is molded in the same mold.
Nike, Inc.


05/19/16
20160136633 
 Honeycomb formed body extruding die patent thumbnailnew patent Honeycomb formed body extruding die
A die has two surfaces, in a forming material supplying surface which is one surface, a plurality of back holes to introduce a forming material of a honeycomb formed body into the die are formed, and in a honeycomb formed body extruding surface which is the other surface, lattice-shaped slits corresponding to cell partition walls are formed, the back holes communicate with the slits in slit intersecting portions of the slits, polygonal cell blocks defined by the slits include chamfered portions in which parts of corner portions and the like are chamfered at a chamfering angle θ of 1.0 to 8.0° to the extruding direction, from the honeycomb formed body extruding surface toward a slit depth direction, and straight portions which are not chamfered, and a ratio of a length l of the straight portion to a slit depth d is from 20 to 60%.. .
Ngk Insulators, Ltd.


05/12/16
20160134503 

Performance enhancements for finding top traffic patterns


A method for network traffic characterization is provided. Flow data records are acquired associated with a security alert signature.
Arbor Networks, Inc.


05/12/16
20160133825 

Piezoelectric layer, piezoelectric component, piezoelectric actuator, piezoelectric sensor, hard-disk drive and ink jet printer


A piezoelectric layer made of potassium sodium niobate which is a perovskite type compound represented by the formula abo3, wherein, in the raman spectroscopy measurement of the piezoelectric layer which is performed while the piezoelectric layer is rotated in the in-plane direction, the measured intensity of the lattice vibration region of the perovskite type compound in the raman spectrum obtained in polarized raman spectroscopy measurement (yx) has a periodicity of approximately 90°, wherein, the polarized raman spectroscopy measurement (yx) is performed while the piezoelectric layer is rotated in the in-plane direction and raman scattering light is polarized in a direction perpendicular to that of the incident light.. .
Tdk Corporation


05/12/16
20160133787 

Diode-based devices and methods for making the same


In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.. .
Taiwan Semiconductor Manufacturing Company, Ltd.


05/12/16
20160133783 

Group iii nitride semiconductor light-emitting device and production method therefor


To provide a group iii nitride semiconductor light-emitting device production method, which is intended to grow a flat light-emitting layer without reducing the in concentration of the light-emitting layer. The method of the techniques includes an n-side superlattice layer formation step, in which an ingan layer, a gan layer disposed on the ingan layer, and an n-type gan layer disposed on the gan layer are repeatedly formed.
Toyoda Gosei Co., Ltd.


05/12/16
20160133775 

Solar cell stack


A solar cell stack, having a first semiconductor solar cell having a p-n junction made of a first material with a first lattice constant, and a second semiconductor solar cell having a p-n junction made of a second material with a second lattice constant, and the first lattice constant being at least 0.008 Å smaller than the second lattice constant, and a metamorphic buffer, the metamorphic buffer being formed between the first semiconductor solar cell and the second semiconductor solar cell, and the metamorphic buffer including a series of three layers, and the lattice constant increasing in a series in the direction of the semiconductor solar cell, and the lattice constants of the layers of the metamorphic buffer being bigger than the first lattice constant, two layers of the buffer having a doping, and the difference in the dopant concentration between the two layers being greater than 4e17 cm−3.. .
Azur Space Solar Power Gmbh


05/12/16
20160133749 

Semiconductor device having tipless epitaxial source/drain regions


A semiconductor device having tipless epitaxial source/drain regions and a method for its formation are described. In an embodiment, the semiconductor device comprises a gate stack on a substrate.

05/12/16
20160133747 

Semiconductor transistor having a stressed channel


A process is described for manufacturing an improved pmos semiconductor transistor. Recesses are etched into a layer of epitaxial silicon.
Intel Corporation


05/12/16
20160133576 

Ultrathin superlattice of mno/mn/mnn and other metal oxide/metal/metal nitride liners and caps for copper low dielectric constant interconnects


An electrical device comprising including an opening in a low-k dielectric material, and a copper including structure present within the opening for transmitting electrical current. A liner is present between the opening and the copper including structure.
International Business Machines Corporation


05/12/16
20160133462 

System for manufacturing graphene on a substrate


A method and apparatus for manufacturing a lattice structure of a material on a substrate, wherein the process may be performed at atmospheric pressure, may not require a metallic substrate, may be capable of continuously generating the lattice structure as long as desired, may be as thin as a single layer of the lattice material, and may create the lattice structure with any material that is capable of being vaporized to create a stream of ionized particles and then condensed to form the lattice structure.. .

05/12/16
20160133258 

Word-level correction of speech input


The subject matter of this specification can be implemented in, among other things, a computer-implemented method for correcting words in transcribed text including receiving speech audio data from a microphone. The method further includes sending the speech audio data to a transcription system.
Google Inc.


05/12/16
20160131810 

Polarizing plate, manufacturing polarizing plate, and manufacturing bundle structure


Provided are a polarizing plate having excellent optical characteristics, and a method for manufacturing the polarizing plate. The present invention is provided with: a translucent substrate through which light passes in a working band; a bundle structure layer constituted of a columnar sheaf comprising one or more material from among dielectrics, metals, and semiconductors, the bundle structure layer being formed on the translucent substrate; an absorption layer formed on the bundle structure layer; a dielectric layer formed on the absorption layer; and a reflection layer formed on the dielectric layer and arranged as a one-dimensional lattice at a pitch that is smaller than the wavelength of the light in the working band.
Dexerials Corporation


05/12/16
20160131156 

Device and system for eliminating air pockets, eliminating air stratification, minimizing inconsistent temperature, and increasing internal air turns


A device for managing air flow within a volume and/or within the device throw area or range, which includes an air transfer component, an entrance to the device, air induction ports, directional vanes, and three exit zones that incorporate lattices. The device minimizes or eliminates air pockets, air stratification, inconsistent temperature, and increases interior air turns within the volume of air to be managed..
Internal Air Flow Dynamics, Llc


05/12/16
20160130725 

Highly twinned, oriented polycrystalline diamond film and manufacture thereof


In a method of chemical vapor deposition (cvd) growth of a polycrystalline diamond film in a cvd reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the cvd reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the cvd reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate.
Ii-vi Incorporated


05/12/16
20160130723 

Barium tetraborate compound and barium tetraborate non-linear optical crystal, and preparation method and use thereof


The present invention relates to a barium tetraborate compound and a barium tetraborate non-linear optical crystal, and a preparation method and use thereof, wherein the chemical formulae of the barium tetraborate compound and the non-linear optical crystal thereof are both bab4o7, with a molecular weight of 292.58; the barium tetraborate non-linear optical crystal has a non-centrosymmetric structure, which belongs to a hexagonal system, and has a space group p65 and lattice parameters of a=6.7233(6) Å, c=18.776(4) Å, v=735.01(17) Å3, and z=6, wherein the powder frequency-doubled effect thereof is two times that of kdp (kh2po4), and the ultraviolet cut-off edge is lower than 170 nm. The barium tetraborate compound is synthesised by a solid-phase reaction method; the barium tetraborate non-linear optical crystal is grown by a high-temperature molten solution method; and the crystal has a moderate mechanical hardness, is easy to cut, polish and store, and is widely applicable in the non-linear optics of a double-frequency doubling generator, an upper frequency converter, a lower frequency converter or an optical parameter oscillator etc..
Xinjiang Technical Institute Of Physics And Chemistry, Chinese Academy Of Sciences


05/12/16
20160130706 

Method for manufacturing a porcelain enamel coating of a metal substrate and article obtained by the method


A method for manufacturing a porcelain enamel coating of a metal substrate comprises the steps of: preparing the surface of the metal substrate; applying a primer on the metal substrate; firing inside an oven at a temperature of between 750 and 900° c.; applying an enamel suspension comprising water and a glass frit; firing inside an oven at a temperature of between 700 and 900° c.; and repeating the last two steps according to the desired thickness of porcelain enamel. The method is characterized in that the glass frit comprises a quantity of lattice modifiers belonging to the transition metals, equal to less than 1% of the total volume of the glass frit; a quantity of opacifying oxides equal to less than 1% of the total volume of the glass frit is added to the glass frit.
3v Enterprise S.p.a.


05/12/16
20160130146 

Carbide-derived carbon manufactured by using heat treatment at vacuum and method thereof


Disclosed is a method of preparing a carbide-derived carbon having high ion mobility for use in a lithium battery anode material, a lithium air battery electrode, a supercapacitor electrode, and a flow capacitor electrode, including thermally treating a carbide compound in a vacuum, thus obtaining a vacuum-treated carbide compound; and thermochemically reacting the vacuum-treated carbide compound with a halogen element-containing gas, thus extracting the element other than carbon from the vacuum-treated carbide compound, wherein annealing can be further performed after thermochemical reaction. This carbide-derived carbon has a small pore distribution, dense graphite fringe, and a large lattice spacing and thus high ion mobility, compared to conventional carbide-derived carbon obtained only by thermochemical reaction with a halogen element-containing gas..
Korea Institute Of Energy Research


05/12/16
20160128544 

Dishwasher rack assembly having positionable support members


A dishwasher rack assembly including a bottom wall formed of a first set of wire rods in parallel, uniform spaced relation to each other perpendicular a second set of wire rods in parallel, uniform spaced relation to each other, the first and second sets of wire members defining open, square lattice areas. One or more support members are coupled intermediate opposing wire rods of the first or second set within a selected lattice area.

05/05/16
20160126552 

Storage structure for a solid electrolyte battery


A storage medium and an inert material, either integrated into the storage medium or existing as a separate phase in the storage medium, form a storage structure. The inert material at least partially contains or is formed by a polymorphous inert material.
Siemens Aktiengesellschaft


05/05/16
20160126340 

Multichannel devices with improved performance and methods of making the same


A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures.
Northrop Grumman Systems Corporation


05/05/16
20160126335 

Lattice matched aspect ratio trapping to reduce defects in iii-v layer directly grown on silicon


A structure having application to electronic devices includes a iii-v layer having high crystal quality and a low defect density on a lattice mismatched substrate. Trenches are formed in a layer of iii-v semiconductor material grown on a substrate having a different lattice constant.
International Business Machines Corporation


05/05/16
20160126094 

Lattice matched aspect ratio trapping to reduce defects in iii-v layer directly grown on silicon


A structure having application to electronic devices includes a iii-v layer having high crystal quality and a low defect density on a lattice mismatched substrate. Trenches are formed in a layer of iii-v semiconductor material grown on a substrate having a different lattice constant.
International Business Machines Corporation


05/05/16
20160126024 

Switch contact element and its preparation method


A switch contact element, having a layered structure comprising three layers: the bottom layer is silicone rubber, the middle layer is a continuous base metal sheet layer, and the upper layer is a discontinuous (stripe-shaped, raised-point-shaped or lattice-shaped) precious metal plated layer or a double-metal composite layer of a discontinuous base metal plated layer and a precious metal plated layer. The thickness of the bottom layer is greater than that of the middle layer, the thickness of the middle layer is greater than that of the upper layer, and the thickness of the upper layer meets the conditions that the conductive current is greater than safe current of conductive contacts on a circuit board, and the service life of a switch for the design is ensured..
Nantong Memtech Technologies Co., Ltd.


05/05/16
20160124860 

Methods and systems for handling data received by a state machine engine


A data analysis system to analyze data. The data analysis system includes a data buffer configured to receive data to be analyzed.
Micron Technology, Inc.


05/05/16
20160124239 

Polarization-dependent lens structure and manufacturing the same


Provided is a polarization-dependent lens structure. The lens structure includes an optically-isotropic polymer layer having a reverse lens shape on a first surface and a lens portion where the surface of the optically-isotropic polymer layer is filled with liquid crystalline polymers, nano-scale 1d lattice structures (nano-scale grooves) are formed on an upper surface thereof, and the liquid crystalline polymers are aligned by the nano-scale 1d lattice structures along a direction of long axes of the 1d lattice structures, wherein it is determined according to a polarization direction of incident light whether or not the polarization-dependent lens structure operates as a lens..
Kyungpook National University Industry-academic Cooperation Foundation


05/05/16
20160122493 

Method and flexible lattice foams


A method of making a foamed article, for example a foamed component for an article or footwear, comprises forming a structure of interconnected, unfoamed, thermoplastic polymeric members spaced to define openings between the thermoplastic polymeric members. The structure may be made by printing a thermoplastic polymeric material with a three-dimensional printer.
Nike, Inc.


05/05/16
20160121169 

Climbing device with anchoring surface


A fastening element for a climbing device configured for fastening to a tree, pole, mast, column, pillar, or like climbing surface includes an outer shell, a concave contact surface formed within the outer shell and a plurality of anchoring nubs. A lattice structure including a plurality of raised ribs may form the contact surface.

05/05/16
20160120184 

Doped metal oxide nanoparticles of and uses thereof


Nanoparticle composites comprised of a metal oxide and ions of a metallic element included within a crystal lattice of said metal oxide are disclosed. Process of preparing the nanoparticle composites per se and incorporated in or on a substrate are also disclosed.
Bar-llan University


04/28/16
20160118526 

Multi-junction solar cell with dilute nitride sub-cell having graded doping


A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed.
Solar Junction Corporation


04/28/16
20160118524 

Stacked integrated multi-junction solar cell


A stacked integrated multi-junction solar cell, having a first subcell, whereby the first subcell has a layer of an ingap compound with a first lattice constant and a first band gap energy, and the thickness of the layer is greater than 100 nm and the layer is formed as part of an emitter and/or as part of the base and/or as part of the space charge region lying between the emitter and base, and a second subcell with a second lattice constant and a second band gap energy, and a third subcell with a third lattice constant and a third band gap energy, and a fourth subcell with a fourth lattice constant and a fourth band gap energy, and a region with a wafer bond is formed between two subcells.. .
Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.


04/28/16
20160118517 

Grouped nanostructured units system forming a metamaterial


This invention concerns a grouped nanostructured unit system forming a metamaterial within the silicon and the manufacturing process to arrange them therein in an optimal manner. The nanostructured units are grouped and conditioned in an optimal arrangement inside the silicon material.
Segton Advanced Technology Sas


04/28/16
20160118329 

Semiconductor device


A partition in lattice form forms a plurality of housing sections. A plurality of circuit blocks including a semiconductor block and a terminal base block are electrically connected one to another in a state of being housed in the housing sections to form a power semiconductor circuit.
Mitsubishi Electric Corporation


04/28/16
20160118255 

Methods of forming strained epitaxial semiconductor material(s) above a strain-relaxed buffer layer


One illustrative method disclosed herein includes, among other things, sequentially forming a first material layer, a first capping layer, a second material layer and a second capping layer above a substrate, wherein the first and second material layers are made of semiconductor material having a lattice constant that is different than the substrate, the first material layer is strained as deposited, and a thickness of the first material layer exceeds its critical thickness required to be stable and strained, performing an anneal process after which the strain in the first material layer is substantially relaxed through the formation of crystallographic defects that are substantially confined to the semiconducting substrate, the first material layer, the first capping layer and the second material layer, and forming additional epitaxial semiconductor material on an upper surface of the resulting structure.. .
Globalfoundries Inc.


04/28/16
20160118248 

Crystal formation on non-lattice matched substrates


A semiconductor structure can be created by forming an insulator layer over a surface of a substrate. An intermediate layer can be formed on top of the insulator layer, wherein openings in the intermediate layer may expose regions of the insulator.
International Business Machines Corporation


04/28/16
20160117415 

Method and system to discover dependencies in datasets


A method of processing data stored in a database which comprises a plurality of rows and columns, the method comprising identifying a plurality of sets of column combinations, each set of column combinations comprising an identifier of at least one column allocating each set of column combinations to one of a plurality of nodes mapping the nodes to a lattice structure in which the nodes are connected in a superset or subset relationship according to the set of column combinations of each node selecting a current node processing the data in the set of columns of the current node to detect if the column combination is unique or non-unique traversing the lattice to a next node which is connected to the current node processing the data in the set of columns of the next node to detect if the column combination of the next node is unique or non-unique; and storing a record of whether each processed set of column combinations is unique or non-unique.. .

04/28/16
20160116798 

Method of manufacturing a polarizer and a display panel having the same


A method of manufacturing a polarizer, the method including: forming a metal layer on a substrate; forming a hard mask on the metal layer; forming an adhesion layer on a portion of the hard mask; forming a polymer layer on the hard mask and the adhesion layer; pressing a mold on the polymer layer to form a lattice pattern in association with the polymer layer; removing the mold and a portion of the lattice pattern; and patterning the adhesion layer, the hard mask, and the metal layer using a remaining portion of the lattice pattern as a mask.. .
Samsung Display Co., Ltd.


04/28/16
20160116677 

Optical waveguide device and manufacturing an optical waveguide device


An optical waveguide device includes first and second branching devices and first to fourth distribution optical waveguides that are formed on an optical waveguide substrate including a latticed dummy pattern of a predetermined pitch and that are arranged, in a region where the dummy pattern is removed, so as to be separated from the dummy pattern, and an interval between the first and second distribution optical waveguides at an output point of the first branching device is equal to an interval between the third and fourth distribution optical waveguides at an output point of the second branching device, and a distance between light propagation centers of the first and second branching devices is an integer multiple of the pitch, and at a point where a distance between neighboring distribution optical waveguides becomes maximum, the distance between the neighboring distribution optical waveguides is an integer multiple of the pitch.. .
Nec Corporation


04/28/16
20160116160 

Combustion plate


A combustion plate is for use in a totally aerated combustion burner in which a plate main body made of ceramic has formed therein a multiplicity of flame holes for ejecting a premixed gas. The plate main body is provided, in a lattice shape, with non-flame-hole sections free of flame holes.
Rinnai Corporation


04/28/16
20160115822 

Lattice type blade of an axial turbine engine compressor


The invention relates to a blade of a low-pressure compressor of an axial turbine engine. The blade comprises a vane in which a cavity is formed.
Techspace Aero S.a.


04/28/16
20160113352 

Method of making a zonal compression shoe


A method of making a shoe includes printing a midsole having a platform and a lattice structure. The platform and lattice structure are integrally formed by printing a first surface of the platform to conform to a sole of a foot of a user and, in association therewith, printing the lattice structure on a second surface of the platform opposite the first surface of the platform.
Under Armour, Inc.


04/28/16
20160113283 

Use of vanadium-containing particles as a biocide


The present invention relates to the use of vanadium-containing particles as a biocide, in particular to the use of vanadium-containing particles comprising at least one vanadium compound and a support material or of a support material in which some metal atoms from the crystal lattice have been replaced by vanadium. Furthermore, it relates to method for preventing biofouling of a substrate and to a method of imparting biocidal properties to the surface of a substrate..
Basf Se


04/21/16
20160111569 

Lattice matchable alloy for solar cells


An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 ev, namely, ga1-xinxnyas1-y-zsbz with a low antimony (sb) content and with enhanced indium (in) content and enhanced nitrogen (n) content, achieving substantial lattice matching to gaas and ge substrates and providing both high short circuit currents and high open circuit voltages in gainnassb subcells for multijunction solar cells. The composition ranges for ga1-xinxnyas1-y-zsbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03..

04/21/16
20160111495 

Methods and forming horizontal gate all around device structures


A method of forming a semiconductor device includes: forming a superlattice structure atop the top surface of a substrate, wherein the superlattice structure comprises a plurality of first layers and a corresponding plurality of second layers alternatingly arranged in a plurality of stacked pairs; forming a lateral etch stop layer by epitaxial deposition of a material of the first layer or the second layer of the superlattice structure atop a sidewall of the superlattice structure, or by selectively oxidizing edges of the first layers and second layers of the superlattice structure; subsequently forming a source region adjacent a first end of the superlattice structure and a drain region adjacent a second opposing end of the superlattice structure; and selectively etching the superlattice structure to remove each of the first layers or each of the second layers to form a plurality of voids in the superlattice structure.. .

04/21/16
20160111337 

Strained stacked nanosheet fets and/or quantum well stacked nanosheet


Exemplary embodiments provide for fabricating a biaxially strained nanosheet. Aspects of the exemplary embodiments include: growing an epitaxial crystalline initial superlattice having one or more periods, each of the periods comprising at least three layers, an active material layer, a first sacrificial material layer and a second sacrificial material layer, the first and second sacrificial material layers having different material properties; in each of the one or more periods, placing each of the active material layers between the first and second sacrificial material layers, wherein lattice constants of the first and second sacrificial material layers are different than the active material layer and impose biaxial stress in the active material layer; selectively etching away all of the first sacrificial material layers thereby exposing one surface of the active material for additional processing, while the biaxial strain in the active material layers is maintained by the second sacrificial material layers; and selectively etching away all of the second sacrificial material layers thereby exposing a second surface of the active material layers for additional processing..

04/21/16
20160111285 

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication


Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.. .

04/21/16
20160111174 

Advanced first core fuel assembly configuration


An advanced initial core fuel configuration is for improving the fuel management efficiency and thus economics for a nuclear reactor. The advanced initial core fuel configuration includes a plurality of fuel assemblies having different average enrichments of uranium 235 and arranging the fuel assemblies in an initial core configuration structured to emulate a known equilibrium reload cycle core at least in terms of spatial reactivity distribution.

04/21/16
20160110911 

Fiber tractography using entropy spectrum pathways


A method for fiber tractography processes multi-shell diffusion weighted mri data to identify fiber tracts by calculating intravoxel diffusion characteristics from the mri data. A transition probability is calculated for each possible path on the lattice, with the transition probability weighted according the intravoxel characteristics.

04/21/16
20160109125 

Hot surface igniters and methods of making same


A method of making a hot surface igniter is described. A silicon carbide composition that includes both fines fraction and a coarse fraction is sintered in a nitrogen and argon reducing atmosphere in a manner that controls the incorporation of nitrogen with in the lattice of recrystallized silicon carbide.

04/21/16
20160108620 

Clip for securing rebar


The present invention is a clip for securing more than two rebar rods. The rods may be secured in a planar or three-dimensional lattice configuration.

04/21/16
20160108313 

Morphologically and size uniform monodisperse particles and their shape-directed self-assembly


Monodisperse particles having: a single pure crystalline phase of a rare earth-containing lattice, a uniform three-dimensional size, and a uniform polyhedral morphology are disclosed. Due to their uniform size and shape, the monodisperse particles self assemble into superlattices.

04/21/16
20160107047 

Amusement ball


Disclosed is the amusement ball for recreational purposes. The amusement ball includes a hollow spherical lattice shell of polyurethane having plurality of open spaces and an inflatable balloon inserted in the hollow spherical lattice shell through the open spaces and is further having a closeable opening.

04/21/16
20160106602 

Absorbent article with three-dimensional film for liquid distribution


An absorbent article with a three-dimensional film transfer layer having an open lattice structure formed from a single film for improved user properties.. .

04/14/16
20160104869 

Organic light emitting display device


An organic light emitting display device includes a substrate, a display unit on the substrate, the display unit including a plurality of light-emitting areas in a lattice pattern, and an antireflective film on the display unit, the antireflective film including at least two metal layers and at least two dielectric layers that are alternately stacked, and each of the at least two metal layers including a plurality of islands in a lattice pattern overlapping the light-emitting areas of the display unit.. .

04/14/16
20160104800 

Body-tied, strained-channel multi-gate device and methods of manufacturing same


A fin-fet or other multi-gate transistor is disclosed. The transistor comprises a semiconductor substrate having a first lattice constant, and a semiconductor fin extending from the semiconductor substrate.

04/14/16
20160103951 

Techniques for controlling spatial structure of nucleic acid structures based on lattice-free, three dimensional junction coordinates


Techniques for controlling nucleic acid structures include determining, for each junction type, values for parameters indicating ground-state geometry and both translational and rotational stiffness coefficients. Topological design data indicates a number of bases in each helix connected to corresponding junctions.

04/14/16
20160103515 

Triaxial lattice array of interferometric modulator pixels


Some implementations disclosed herein include an array of reflective pixels, each of the reflective pixels including an interferometric light modulator (imod), the array being configured as a honeycomb-like triaxial lattice. Each imod includes at least two conductive layers that define at least one cavity, at least one of the conductive layers being movable relative to the other through a range of positions and being hingedly supported by less than four support posts..

04/14/16
20160103255 

Increased accuracy corner cube arrays for high resolution retro-reflective imaging applications


Tooling and optic elements for a retro-imaging system may be formed on order near atomic level of accuracy by making use of either etching or growth techniques of a cubic crystal lattice, such as silicon. The elements may be formed directly using selective etching or epitaxial growth by coating and clear resin lamination, or replicated to avoid shrinkage and curvature by use of low shrinkage resins or double-fill molding techniques.

04/14/16
20160101386 

Grafted polymer nanocomposite materials, systems, and methods


Provided are methods of separating one or more components from a fluid by using membranes and other materials comprising polymer graft nanoparticles arranged in a lattice structure. The disclosed compositions exhibit an increase in selectivity between two penetrants that is greater than the neat polymer selectivity for those penetrants.

04/14/16
20160101296 

Radiation treatment collimator having multilayered linkage structure


The present invention relates to a radiation treatment collimator having a multilayered linkage structure, the collimator providing various shapes of spaces and configuring a radiation area, which transmits radioactive rays, the collimator including: a fixed frame disposed on a plate; multiple pixel board layers fixedly stacked at predetermined intervals on top of each other inside the fixed frame, each pixel board layer being configured in a lattice form and having pixel covers disposed correspondingly to the respective lattices in such a manner as to be open and closed individually; control units disposed on both sides of the fixed frame to individually control the operations of the pixel covers of the pixel board layers; and power source units disposed on the front and rear sides of the fixed frame to supply the pixel board layers with operating power. The collimator is inexpensive and exhibits good treatment results; each pixel can be open/closed separately to form a radioactive ray radiation area; and the collimator is capable of, in real time, converting the shape of the radiation area and adjusting the intensity of the radioactive rays..

04/07/16
20160099396 

Natural-superlattice-structured thermoelectric material


Provided is a thermoelectric material satisfying (mx)1+a(tx2)n and having a superlattice structure, wherein m is at least one element selected from the group consisting of group 13, group 14, and group 15, t is at least one element selected from group 5, x is a chalcogenide element, a is a real number satisfying 0<a<1, and n is a natural number of 1 to 3.. .
University-industry Cooperation Group Of Kyung Hee University


04/07/16
20160099317 

Vertical semiconductor devices including superlattice punch through stop layer and related methods


A semiconductor device may include a substrate, and a plurality of fins spaced apart on the substrate. Each of the fins may include a lower semiconductor fin portion extending vertically upward from the substrate, and at least one superlattice punch-through layer on the lower fin portion.
Mears Technologies, Inc.


04/07/16
20160099178 

Fin structure formation by selective etching


Methods and apparatus for forming finfet structures are provided. Selective etching and deposition processes described herein may provide for finfet manufacturing without the utilization of multiple patterning processes.
Applied Materials, Inc.




Lattice topics: Semiconductor, Semiconductor Device, Semiconductor Material, Crystallin, Disconnect, Transistors, Replacement Gate, Semiconductor Devices, Dislocations, Dislocation, Image Processing, Coordinates, Surface Plasmon Polariton, Antenna Array

Follow us on Twitter
twitter icon@FreshPatents

###

This listing is a sample listing of patent applications related to Lattice for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Lattice with additional patents listed. Browse our RSS directory or Search for other possible listings.


0.4754

4416

0 - 1 - 102