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This page is updated frequently with new Lattice-related patent applications. Subscribe to the Lattice RSS feed to automatically get the update: related Lattice RSS feeds. RSS updates for this page: Lattice RSS RSS


Transistor with improved sigma-shaped embedded stressor and method of formation

Transistor with improved sigma-shaped embedded stressor and method of formation

Flexural digital material construction and transduction

Flexural digital material construction and transduction

Flexural digital material construction and transduction

Discrete motion system

Date/App# patent app List of recent Lattice-related patents
10/09/14
20140302996
 Method and apparatus for enhancing vortex pinning by conformal crystal arrays patent thumbnailMethod and apparatus for enhancing vortex pinning by conformal crystal arrays
Disclosed is a method and apparatus for strongly enhancing vortex pinning by conformal crystal arrays. The conformal crystal array is constructed by a conformal transformation of a hexagonal lattice, producing a non-uniform structure with a gradient where the local six-fold coordination of the pinning sites is preserved, and with an arching effect.
10/09/14
20140302658
 Transistor with improved sigma-shaped embedded stressor and method of formation patent thumbnailTransistor with improved sigma-shaped embedded stressor and method of formation
A method and structure of an embedded stressor in a semiconductor transistor device having a sigma-shaped channel sidewall and a vertical isolation sidewall. The embedded stressor structure is made by a first etch to form a recess in a substrate having a gate and first and second spacers.
10/09/14
20140302261
 Flexural digital material construction and transduction patent thumbnailFlexural digital material construction and transduction
Flexural digital materials are discrete parts that can be assembled into a lattice structure to produce an actuatable structure capable of coordinated reversible spatially-distributed deformation. The structure comprises a set of discrete flexural digital material units assembled according to a lattice geometry, with a majority of the discrete units being connected, or adapted to be connected, to at least two other units according to the geometry.
10/09/14
20140300211
 Discrete motion system patent thumbnailDiscrete motion system
Discrete motion systems move relative to a lattice, using bistable mechanisms to snap between lattice locations. A discrete motion system includes a lattice having a regular configuration of attachment points, one or more motion modules that move across the lattice in discrete increments, and controllers that direct the modules.
10/09/14
20140300110
 Wave energy gathering and enhancing device patent thumbnailWave energy gathering and enhancing device
The present disclosure provides a wave energy gathering and enhancing device disposed in a setting area of the sea-bed. A seawater wave approaches the wave energy gathering and enhancing device with a wave vector.
10/09/14
20140299885
 Substrate structures and semiconductor devices employing the same patent thumbnailSubstrate structures and semiconductor devices employing the same
A substrate structure includes a substrate, a nucleation layer on the substrate and including a group iii-v compound semiconductor material having a lattice constant that is different from that of the substrate by less than 1%, and a buffer layer on the nucleation layer and including first and second layers, wherein the first and second layers include group iii-v compound semiconductor materials having lattice constants that are greater than that of the nucleation layer by 4% or more.. .
10/09/14
20140299511
 Modified y-type zeolite and preparation process and use thereof patent thumbnailModified y-type zeolite and preparation process and use thereof
Wherein m200° c., m500° c. And m800° c.
10/09/14
20140299074
 Boiler with flat horizontal tubes patent thumbnailBoiler with flat horizontal tubes
The present invention relates to a boiler having horizontally arranged flat rectangular water tubes comprising: a water chamber; an inner water chamber to be connected with horizontal water tubes, said horizontally arranged water tubes forming multi-step water tube groups; induction plates provided in the inner water chamber blocking the water path of the horizontal water tubes alternatingly in such a manner as to bend the water path in a zigzag manner; an exhaust gas discharge conduit in straight lattice lines formed by narrow gaps between the horizontal water tubes; and an exhaust gas discharge chamber formed in an upper water chamber. The flat horizontally arranged rectangular water tubes are narrow in their width, making it possible to arrange them densely in the limited space of the combustion chamber, and with their increased heat receiving areas, the water tubes can heat the water in the boiler fast..
10/09/14
20140298733
 Roof structure for a vehicle patent thumbnailRoof structure for a vehicle
There is provided a roof for a vehicle where each one of its right and left side wall has at least a first and a second door opening. The roof structure comprises a lattice structure and an outer shell.
10/02/14
20140294297
 Image processing for forming realistic stratum detritus detail in a camouflage pattern and a camouflage pattern formed thereby patent thumbnailImage processing for forming realistic stratum detritus detail in a camouflage pattern and a camouflage pattern formed thereby
An image processing method forming realistic stratum detritus detail in a camouflage pattern comprises the steps of: identifying the desired camouflage genre; forming a base image layer with a shallow depth of field which includes a foreground focal element extending substantially across the width of the pattern; forming a lattice work image layer including a lattice work of appropriate natural elements; overlaying the lattice work image layer onto the base image layer; and blending the detritus images into the natural elements of the lattice work. Camouflage patterns formed according to the disclosed process are also disclosed which form a more effective hunter camouflage pattern..
10/02/14
20140291616
Compound tunneling field effect transistor integrated on silicon substrate and method for fabricating the same
Compound tunneling field effect transistors integrated on a silicon substrate are provided with increased tunneling efficiency and an abrupt band slope by forming a source region with a material having a bandgap at least 0.4 electron volts (ev) narrower than that of silicon to increase a driving current (on current) by forming a channel region with a material having almost no difference in lattice constant from a source region and having a high electron mobility at least 5 times higher than silicon. On/off current ratio simultaneously is increased by forming a drain region with a material having a bandgap at least as wide as a channel region material to restrain off current.
09/25/14
20140287226
Ingot, silicon carbide substrate, and method for producing ingot
There is obtained an ingot in which generation of crack is suppressed. The ingot includes: a seed substrate formed of silicon carbide; and a silicon carbide layer grown on the seed substrate.
09/25/14
20140287192
Honeycomb structural body
A honeycomb structural body has cells surrounded by cell walls arranged in a lattice-like shape. A cross section is divided into a central section and an outer peripheral section.
09/25/14
20140284614
Methods for epitaxial devices
Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate.
09/25/14
20140284550
Light-emitting device
A light-emitting device including a gan-based semiconductor has a structure in which sequentially deposited are an n-type semiconductor layer, a superlattice structure layer including at least one ingan superlattice layer, an active layer, an algan-based semiconductor layer, and a p-type semiconductor layer. A concavo-convex structure is formed on the interface of the algan-based semiconductor layer with the p-type semiconductor layer.
09/25/14
20140283754
Fish farming plant, module, method and use
The present invention relates to a fish fanning plant adapted for floating in free water. The plant comprises a substantially vertical inlet pipe and a corresponding outlet pipe for taking in and discharging water, respectively, at a water depth having the desired water quality at a depth (h).
09/25/14
20140283531
Cryopump and method for vacuum pumping non-condensable gas
A cryopump includes: a radiation shield that includes a shield front end that defines a shield opening, a shield bottom portion, and a shield side portion that extends between the shield front end and the shield bottom portion; and a cryopanel assembly that is cooled to a lower temperature than that of the radiation shield. The cryopanel assembly includes a first panel arrangement including a plurality of first adsorption panels and a plurality of second panel arrangements each including a plurality of second adsorption panels.
09/18/14
20140278390
Classifier-based system combination for spoken term detection
Systems and methods for processing a query include determining a plurality of sets of match candidates for a query using a processor, each of the plurality of sets of match candidates being independently determined from a plurality of diverse word lattice generation components of different type. The plurality of sets of match candidates is merged by generating a first score for each match candidate to provide a merged set of match candidates.
09/18/14
20140277505
Spinal implants with bioactive glass markers
The present invention relates to orthopedic implants. More specifically, the present invention is a series of orthopedic implants constructed from biocompatible material, each including a plurality of markers constructed from bioactive glass material, some of which are radio-opaque.
09/18/14
20140274459
Method and system of manufacturing a golf club, and a manufactured golf club head
A golf club head for playing golf made by a method including providing a powdered metal, and applying a controlled source of energy to the powdered metal layer by layer to form a golf club head, wherein the golf club head is a hollow golf club head having a supporting lattice formed within the hollow golf club head.. .
09/18/14
20140273285
Memory array with self-aligned epitaxially grown memory elements and annular fet
A system and method for fabricating a memory array device. An example memory array device includes a plurality of memory cells, each including a fet over a substrate and a memory element over the fet.
09/18/14
20140273247
Methods for monitoring changes in the core of lipoprotein particles in metabolism and disease
A method is disclosed for measuring the properties of protein and lipoprotein elements in a sample. The method includes the of placing a small volume of a sample into a nmr instrument tuned to measure a particular nucleus, applying a series of radiofrequency pulses with intermittent delays in order to measure spin-spin and/or spin-lattice relaxation time constants from the time-domain decay of the signal, without the use of chemical shifts and without converting data into the frequency domain by fourier transform or other means, at least partially suppressing the water signal prior to the beginning of a sequence used to record relaxation time constants in the time domain, optionally utilizing relaxation contrast agents or other chemical additives to perturb the solvent water or other elements of the sample, analyzing the exponentially decaying nmr signal in the time domain using multi-exponential analysis, and comparing differences in the relaxation time constants for lipoprotein- or protein-specific elements within a single human subject, or between subjects, to assess normal and abnormal metabolism reflective of increased disease risk or active disease..
09/18/14
20140272335
Low-e glazing performance by seed structure optimization
A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability.
09/18/14
20140271436
Rare earth oxyorthosilicate scintillation crystals
The use of the effect of crystallographic axis orientation on the effectiveness in annealing in multiple atmospheres and chemical compositions of lutetium oxyorthosilicate crystals and other scintillator crystals is disclosed. By controlling axis orientation an favorable annealing condition can be selected to repair both internal interstitial and vacancy defects through the crystal lattice.
09/18/14
20140271388
Formation and stability of cu-mn spinel phase for zpgm catalyst systems
Optimized cu—mn spinel compositions, with optimal spinel phase formation and phase stability properties, for a plurality of zpgm catalysts in underfloor and closed-loop coupled catalyst applications are disclosed. Plurality of cu—mn spinel compositions are prepared with variations of molar ratios.
09/18/14
20140270666
Hollow core fiber with polarization dependent loss
A hollow core fiber having polarization dependent loss is provided. The hollow core fiber embedded in a cellular cladding having a plurality of cells arranged in a nominally regular cellular lattice.
09/18/14
20140265734
Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing
A textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.. .
09/18/14
20140264847
Semiconductor device
A semiconductor device includes a plurality of electrodes disposed on a surface in a first column and a second column parallel to the first and separated by a first distance. The adjacent electrodes in the first column are spaced from each other by at least a second distance.
09/18/14
20140264763
Engineered substrates for semiconductor epitaxy and methods of fabricating the same
In a method for fabricating an engineered substrate for semiconductor epitaxy, an array of seed structures is assembled on a surface of the substrate. The seed structures in the array have substantially similar directional orientations of their crystal lattices, and are spatially separated from each other.
09/18/14
20140264747
Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
A dielectric layer can achieve a crystallography orientation similar to a base dielectric layer with a conductive layer disposed between the two dielectric layers. By providing a conductive layer having similar crystal structure and lattice parameters with the base dielectric layer, the crystallography orientation can be carried from the base dielectric layer, across the conductive layer to affect the dielectric layer.
09/18/14
20140264510
Memory array with self-aligned epitaxially grown memory elements and annular fet
A system and method for fabricating a memory array device. An example memory array device includes a plurality of memory cells, each including a fet over a substrate and a memory element over the fet.
09/18/14
20140264445
Source/drain structure of semiconductor device
The disclosure relates to a semiconductor device. An exemplary structure for a field effect transistor comprises a substrate comprising a major surface and a cavity below the major surface; a gate stack on the major surface of the substrate; a spacer adjoining one side of the gate stack; a shallow trench isolations (sti) region disposed on the side of the gate stack, wherein the sti region is within the substrate; and a source/drain (s/d) structure distributed between the gate stack and sti region, wherein the s/d structure comprises a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; and a s/d extension disposed between the substrate and strained material, wherein the s/d extension comprises a portion extending below the spacer and substantially vertical to the major surface..
09/18/14
20140264438
Heterostructures for semiconductor devices and methods of forming the same
Various heterostructures and methods of forming heterostructures are disclosed. A structure includes a substrate, a template layer, a barrier layer, and a device layer.
09/18/14
20140264375
Lattice mismatched heterojunction structures and devices made therefrom
Semiconductor heterojunction structures comprising lattice mismatched, single-crystalline semiconductor materials and methods of fabricating the heterojunction structures are provided. The heterojunction structures comprise at least one three-layer junction comprising two layers of single-crystalline semiconductor and a current tunneling layer sandwiched between and separating the two layers of single-crystalline semiconductor material.
09/18/14
20140264283
Frequency arrangement for surface code on a superconducting lattice
A device lattice arrangement including a plurality of devices, a plurality of physical connections for the plurality of devices, wherein each of the plurality of devices are coupled to at least two of the plurality of physical connections, a plurality of identity labels associated with individual devices of the plurality of devices and an arrangement of identity labels such that pairs of devices of the plurality of devices connected by some number of the plurality of connections have different identity labels.. .
09/18/14
20140264278
Strained ingaas quantum wells for complementary transistors
An ingaas n-channel quantum well heterostructure for use in a complementary transistor having a sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials..
09/18/14
20140264274
Semiconductor device
To improve performance of a semiconductor device. For example, on the assumption that a superlattice layer is inserted between a buffer layer and a channel layer, a concentration of acceptors introduced into nitride semiconductor layers forming a part of the superlattice layer is higher than a concentration of acceptors introduced into nitride semiconductor layers forming the other part of the superlattice layer.
09/18/14
20140264273
Superlattice crenelated gate field effect transistor
The present invention is directed to a device comprising an epitaxial structure comprising a superlattice structure having an uppermost 2dxg channel, a lowermost 2dxg channel and at least one intermediate 2dxg channel located between the uppermost and lowermost 2dxg channels, source and drain electrodes operatively connected to each of the 2dxg channels, and a plurality of trenches located between the source and drain electrodes. Each trench has length, width and depth dimensions defining a first sidewall, a second sidewall and a bottom located therebetween, the bottom of each trench being at or below the lowermost 2dxg channel.
09/18/14
20140264272
Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
A photonic device comprises a substrate and a dielectric material including two or more openings that expose a portion of the substrate, the two or more openings each having an aspect ratio of at least 1. A bottom diode material comprising a compound semiconductor material that is lattice mismatched to the substrate occupies the two or more openings and is coalesced above the two or more openings to form the bottom diode region.
09/18/14
20140264145
Nanoferrite flakes
A ferrite layer having a columnar structure is formed, and ferrite flakes are separated from the ferrite layer. The ferrite flakes include a metal oxide having a spinel cubic crystal structure with a stoichiometry represented by ab2o4, where a and b represent different lattice sites occupied by cationic species, and o represents oxygen in its own sublattice..
09/18/14
20140263178
Methods for chemical reaction perforation of atomically thin materials
A method for forming a lattice with precisely sized holes includes disposing cutter molecules with species attached about the periphery of each molecule on to the lattice. The method continues with the species cutting molecular bonds of the lattice so as to form precisely sized holes in the lattice.
09/18/14
20140261909
High-strength aluminum-magnesium silicon alloy and manufacturing process thereof
A high-strength aluminum-magnesium silicon alloy and its manufacturing process which includes a composition adjusting step to add vanadium (v) and zirconium (zr) in an aluminum-magnesium silicon alloy to refine grains of the alloy; a material casting step, a material preheating step, a hot forging step and a heat treatment step to melt magnesium and silicon atoms into an aluminum base to cause a lattice distortion and achieve a strengthening effect and precipitate mg2si from the grains of the alloy, and the precipitated particles act as obstacles to dislocation movement. Therefore, the alloy product has a yield strength improved by 31%, the ultimate strength by 39%, the hardness by 34%, and the fatigue strength by 55%.
09/18/14
20140261840
Manufacture method of tubular member and tubular member manufactured by the same
An expandable tube portion including slots arranged in a staggered fashion is expanded. When the expandable tube portion is expanded, the individual slots open to a cut end portion of the expandable tube portion are transformed to open in v-shape while the whole body of the expandable tube portion is transformed to a lattice configuration.
09/18/14
20140261653
Multi junctions in a semiconductor device formed by different deposition techniques
A semiconductor device, in particular a solar cell is formed on the basis of a hybrid deposition strategy using mocvd and mbe in order to provide lattice matched semiconductor compounds. To this end, the mbe may be applied for providing a nitrogen-containing semiconductor compound that allows a desired low band gap energy and a lattice matched configuration with respect to gallium arsenide substrates..
09/18/14
20140261604
Giant cross-plane seebeck effect in oxide metal semiconductor superlattices for spin-magnetic thermoelectric devices
Lanthanum strontium manganate (la0.67sr0.33mno3, i.e., lsmo)/lanthanum manganate (lamno3, i.e., lmo) perovskite oxide metal/semiconductor superlattices were investigated for potential p-type thermoelectric applications. Growth optimizations were performed using pulsed laser deposition to achieve epitaxial superlattices of lsmo (metal)/lmo (p-type semiconductor) on strontium titanate (sto) substrates.
09/18/14
20140261085
Pigments of simultaneously substituted pyrochlore and related structures
A compound or a pigment comprising a compound where there is simultaneous substitution of more or more elements onto both the a and b sites of a pyrochlore lattice or a lattice related to a pyrochlore. The pigment comprises a compound with the formula of aya′y′bxb′x′zp.
09/18/14
20140260140
Paint booth filter
The invention is a filter for paint booth filtration systems. The filter has a housing made up of a peripheral wall, which extends around the entire periphery of the filter, and opposing filter-retaining screens.
09/18/14
20140259900
Protection system for mechanized covering of plant crops
Protection system for the mechanized covering of plant crops which are usually planted in rows, of the type in which vertical poles (1) are arranged along the rows and have heights greater than those of the crowns of the plants to be protected, the poles being interconnected by longitudinal (3) and transverse (2) cables to form an overhead supporting lattice roof structure, the system comprising means for mechanizing the steps of extending flexible protective sheets (4) over the roof structure and removing them therefrom, characterized in that: the poles (1) are in a staggered or grid arrangement such that they are transversely aligned in even-numbered rows (f2, f4, etc.) only and in odd-numbered rows (f1, f3, etc.) only, the whole arrangement being such that the transverse connecting cables (2) intersect the longitudinal cables (3) alternately at points at which neither the transverse nor the longitudinal cables are supported by poles (1); in that the transverse cables (2) run above the longitudinal cables at the intersection points; and in that each protective sheet (4) is arranged so that its median longitudinal part slides on the longitudinal cable (3), passing alternately over a support pole (1), where it is supported from below by the longitudinal cable and by the portion of transverse cable (2) which interacts with the pole, and subsequently passing under a transverse cable (2) at the point of intersection with the longitudinal cable where the sheet is supported solely by the longitudinal cable, the whole arrangement being designed to form a protective covering which is supported from below and above by the support cables (2, 3), and which is therefore able to effectively withstand even considerable atmospheric turbulence.. .
09/18/14
20140259787
3d zonal compression shoe
A shoe is configured to be worn on a user's foot and includes an upper and a sole coupled to the upper. The sole includes an insole, a midsole, and an outsole.
09/18/14
20140259639
Low diffuse scatter, anechoic chamber absorber
An electromagnetic chamber absorber provided improved absorption across a wideband and both lower diffuse and specular scatter and a method for constructing the same. An exemplary device can compromise a periodic arrangement of disconnected electromagnetically lossy elements where the periodicity of the lattice is adjusted to suppress all or most grating lobe scattering.
09/18/14
20140259576
Removable customizable casket panel
Caskets, cap panel assemblies for a casket, and methods for manufacturing cap panel assemblies are described. A casket may include a casket shell, at least one casket cap pivotally mounted on the casket shell, and a cap panel assembly mounted in the at least one casket cap.
09/18/14
20140259326
Pad incorporating shear-thickening material
A pad is disclosed that includes first and second outer layers. The outer layers include a plurality of channels at least partially filled with shear-thickening fluid.
09/18/14
20140259325
Protective apparatus with a varied thickness lattice support structure
Aspects of the present invention relate to a protective apparatus that is comprised of an impact shell and an impact attenuating component. In particular, the impact shell is comprised of a lattice structure on the posterior side of the shell that protrudes from the shell and allows the impact attenuating structure to be offset or spaced from the posterior surface of the shell in at least a middle portion of the shell.
09/11/14
20140256080
Semiconductor device pn junction fabrication using optical processing of amorphous semiconductor material
Systems and methods for semiconductor device pn junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a p-n junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material..
09/11/14
20140255097
Erosion prevention plank with interior lattice
An erosion control plank is provided. The plank is a lattice of intersecting vertical walls and horizontal walls and includes an opening to permit a stake to secure the plank over an eroded region.
09/11/14
20140255040
Photonic-crystal slab absorber and high-frequency circuit and electronic components, and transmitter, receiver and proximity wireless communication system
The photonic-crystal (pc) slab absorber includes: a two-dimensional (2d)-pc slab composed of semiconducting materials; and a lattice point periodically arranged in the 2d-pc slab, the lattice point for forming resonant-state which can capture an electromagnetic waves incident from an outside by resonating an electromagnetic wave in a band edge of a photonic band structure of the 2d-pc slab in the plane of the 2d-pc slab. The 2d-pc slab is doped with impurities and can absorb the captured electromagnetic wave in the band edge resonant frequency of the 2d-pc slab..


Popular terms: [SEARCH]

Lattice topics: Semiconductor, Semiconductor Device, Semiconductor Material, Crystallin, Disconnect, Transistors, Replacement Gate, Semiconductor Devices, Dislocations, Dislocation, Image Processing, Coordinates, Surface Plasmon Polariton, Antenna Array

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