FreshPatents.com Logo
Enter keywords:  

Track companies' patents here: Public Companies RSS Feeds | RSS Feed Home Page
Popular terms

[SEARCH]

Lattice topics
Semiconductor
Semiconductor Device
Semiconductor Material
Crystallin
Disconnect
Transistors
Replacement Gate
Semiconductor Devices
Dislocations
Dislocation
Image Processing
Coordinates
Surface Plasmon Polariton
Antenna Array

Follow us on Twitter
twitter icon@FreshPatents

Web & Computing
Cloud Computing
Ecommerce
Search patents
Smartphone patents
Social Media patents
Video patents
Website patents
Web Server
Android patents
Copyright patents
Database patents
Programming patents
Wearable Computing
Webcam patents

Web Companies
Apple patents
Google patents
Adobe patents
Ebay patents
Oracle patents
Yahoo patents

[SEARCH]

Lattice patents



      
           
This page is updated frequently with new Lattice-related patent applications. Subscribe to the Lattice RSS feed to automatically get the update: related Lattice RSS feeds. RSS updates for this page: Lattice RSS RSS


Erosion prevention plank with interior lattice

Photonic-crystal slab absorber and high-frequency circuit and electronic components, and transmitter, receiver and…

Method and apparatus for lattice reduction with reduced computational complexity

Date/App# patent app List of recent Lattice-related patents
09/11/14
20140256080
 Semiconductor device pn junction fabrication using optical processing of amorphous semiconductor material patent thumbnailSemiconductor device pn junction fabrication using optical processing of amorphous semiconductor material
Systems and methods for semiconductor device pn junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a p-n junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material..
09/11/14
20140255097
 Erosion prevention plank with interior lattice patent thumbnailErosion prevention plank with interior lattice
An erosion control plank is provided. The plank is a lattice of intersecting vertical walls and horizontal walls and includes an opening to permit a stake to secure the plank over an eroded region.
09/11/14
20140255040
 Photonic-crystal slab absorber and high-frequency circuit and electronic components, and transmitter, receiver and proximity wireless communication system patent thumbnailPhotonic-crystal slab absorber and high-frequency circuit and electronic components, and transmitter, receiver and proximity wireless communication system
The photonic-crystal (pc) slab absorber includes: a two-dimensional (2d)-pc slab composed of semiconducting materials; and a lattice point periodically arranged in the 2d-pc slab, the lattice point for forming resonant-state which can capture an electromagnetic waves incident from an outside by resonating an electromagnetic wave in a band edge of a photonic band structure of the 2d-pc slab in the plane of the 2d-pc slab. The 2d-pc slab is doped with impurities and can absorb the captured electromagnetic wave in the band edge resonant frequency of the 2d-pc slab..
09/11/14
20140254727
 Method and apparatus for lattice reduction with reduced computational complexity patent thumbnailMethod and apparatus for lattice reduction with reduced computational complexity
Provided is a method and apparatus for lattice reduction with reduced computational complexity. The apparatus and method include calculating an r matrix using sorted qr decomposition, and conducting an r-value test using an r-value based on diagonal elements of the r matrix and a threshold value.
09/11/14
20140253583
 Systems and methods for mapping color data patent thumbnailSystems and methods for mapping color data
Described herein is a system and method that relates to mapping from one color space on a 3d cube to another, and an addressing method used to represent the data. The system organizes the data to reduce memory storage requirements, by re-using redundant information from different cube corners in a lattice structure without re-storing the same data.
09/11/14
20140252674
 Architected materials for enhanced energy absorption patent thumbnailArchitected materials for enhanced energy absorption
A three-dimensional lattice architecture with a thickness hierarchy includes a first surface and a second surface separated from each other with a distance therebetween defining a thickness of the three-dimensional lattice architecture; a plurality of angled struts extending along a plurality of directions between the first surface and the second surface; a plurality of nodes connecting the plurality of angled struts with one another forming a plurality of unit cells. At least a portion of the plurality of angled struts are internally terminated along the thickness direction of the lattice structure and providing a plurality of internal degrees of freedom towards the first or second surface of the lattice architecture..
09/11/14
20140252468
 Engineered source/drain region for n-type mosfet patent thumbnailEngineered source/drain region for n-type mosfet
Integrated circuit devices with field effect transistors have source and drain regions that include a first and a second layer. The first layer is formed below the plane of the channel region.
09/11/14
20140252366
 Semiconductor structure including buffer with strain compensation layers patent thumbnailSemiconductor structure including buffer with strain compensation layers
A semiconductor structure includes a substrate and a semiconductor buffer structure overlying the substrate. The semiconductor buffer structure includes a semiconductor body of a gallium nitride material, and a stack of strain compensation layers.
09/11/14
20140252304
 Phase-change memory and semiconductor recording/reproducing device patent thumbnailPhase-change memory and semiconductor recording/reproducing device
A phase-change memory and a semiconductor recording/reproducing device capable of reducing consumed power are provided. A snxte100-x/sb2te3 sl film obtained by depositing a snxte100-x film and a sb2te3 film layer by layer contains a snte/sb2te3 superlattice phase formed of snte and sb2te3, a snsbte alloy phase, and a te phase.
09/11/14
20140251585
 Micro-lattice cross-flow heat exchangers for aircraft patent thumbnailMicro-lattice cross-flow heat exchangers for aircraft
An aircraft micro-lattice cross-flow heat exchanger and methods are presented. A first aircraft fluid source inlet provides a first fluid from a first aircraft system, and a second aircraft fluid source inlet provides a second fluid from a second aircraft system.
09/04/14
20140249806
Audio encoding apparatus, audio decoding apparatus, audio encoding method, and audio decoding method
An audio encoding apparatus capable of reducing the bit rate even if a codebook having a larger codebook number is selected in a split multi-rate lattice vector quantization is provided. Sub-vector determining unit (121) determines, in the spectrum of an input signal having been divided into a predetermined number of sub-vectors, a sub-vector using the largest number of bits.
09/04/14
20140248020
Teraherz-wave connector and teraherz-wave integrated circuits, and wave guide and antenna structure
The terahertz-wave connector includes: a 2d-pc slab; lattice points periodically arranged in the 2d-pc slab, the lattice points for diffracting the thz waves in pbg frequencies of photonic band structure of the 2d-pc slab in order to prohibit existence in a plane of the 2d-pc slab; a 2d-pc waveguide disposed in the 2d-pc slab and formed with a line defect of the lattice points; and an adiabatic mode converter disposed at the edge face of the 2d-pc slab to which the 2d-pc waveguide extended, the 2d-pc waveguide extended to the adiabatic mode converter. There is provided also the thz-wave ic to which such a terahertz-wave connector is applied..
09/04/14
20140246695
Isolation structure of semiconductor device
The invention relates to an isolation structure of a semiconductor device. An exemplary isolation structure for a semiconductor device comprises a substrate comprising a trench; a strained material in the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an oxide layer of the strained material over the strained material; a high-k dielectric layer over the oxide layer; and a dielectric layer over the high-k dielectric layer filling the trench..
09/04/14
20140246683
Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing
Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“hsg”) structures on the substrate surface of the substrate material.
09/04/14
20140246679
Iii-n material grown on eraln buffer on si substrate
Iii-n material grown on a buffer on a silicon substrate includes a single crystal electrically insulating buffer positioned on a silicon substrate. The single crystal buffer includes rare earth aluminum nitride substantially crystal lattice matched to the surface of the silicon substrate, i.e.
08/28/14
20140243726
Hemostatic and biodegradable bandages and bandage implants
In one embodiment, the present invention is a multi-layered bandage including a wound-contacting first layer which is porous, fluid-permeable, biodegradable, and capable of accelerating hemostasis and wound healing, and a second layer formed from an absorbent material which is releasably secured to the first layer. The first layer includes a porous, fluid-permeable, biodegradable lattice structure formed from a homogeneous mixture of collagen and a clotting enzyme which, as healing occurs, may be replaced by new tissue.
08/28/14
20140243495
Polyether preparation method, prepolymer preparation method, and modified silicone polymer preparation method
A polyether preparation method which comprises a polymerization step of subjecting a monoepoxide having at least 2 carbon atoms to ring-opening addition polymerization to an initiator having at least one active hydrogen-containing functional group in the presence of a catalyst in a stirring vessel, to obtain a polyether, wherein the stirring vessel is one wherein a stirring shaft rotatable by an external drive source is provided at the center of the stirring vessel; plate-shaped bottom paddles extending in a radial direction of the stirring vessel are mounted on a lower portion of the stirring shaft; lattice vanes each comprising arm paddles extending in a radial direction and strips extending in an axial direction, are mounted on a portion of the stirring shaft above the bottom paddles; and a discharge nozzle as a monoepoxide-supply means for discharging the monoepoxide to at least two locations below the lower ends of the strips.. .
08/28/14
20140242573
Optical element, analysis device, analysis method and electronic apparatus
An optical element includes a metal layer having a thickness in a first direction; metallic particles spaced apart from the metal layer in the first direction; and a light transmitting layer separating the metal layer from the metallic particles. The metallic particles are disposed in a lattice shape in a second direction orthogonal to the first direction and in a third direction orthogonal to the first direction and the second direction.
08/28/14
20140241982
Novel zeolitic materials with heteroatom substitutions on external surface of lattice framework
A zeolite material is provided having non-boron heteroatoms on the external surface of the zeolitic material lattice framework and b heteroatoms, or silanols created from boron hydrolysis, throughout the remainder of the lattice framework. The lattice framework of the zeolite material comprises large pore 12 member ring or larger openings at the external surface of the framework, and 10 member ring or smaller openings beneath the external surface large pore openings.
08/28/14
20140241827
Insert nut having rectangular lattic structure and manufacturing method thereof
A method of manufacturing the insert nut having the rectangular lattice structure, comprises preparing a forged article having a flange and a nut body formed with a serration, which are formed by a forging process; pressing the forged article with a thread rolling die in which a diagonal line inclined at an angle of 15° to 30° with respect to a vertical line to a length direction thereof is formed, and a circular arc is defined by the diagonal line, and a curved die protrusion is provided to have a curvature r so that the vertical line is tangentially contacted with the circular arc, and thus an angle between rectangular lattices is maintained to 50° to 40°; and performing a thread rolling process by pressing-in and rotating the forged article.. .
08/28/14
20140241493
Metal lattice production method, metal lattice, x-ray imaging device, and intermediate product for metal lattice
Method for manufacturing a metal grating structure, wherein, after a concave part having an insulating layer on an inner surface thereof is formed in a silicon substrate, a portion of the insulating layer formed on a bottom part of the concave part is removed, and the silicon substrate at the bottom part of the concave part is etched to increase the surface area of the bottom part of the concave part as compared with a state before the etching, followed by filling the concave part with metal by an electroforming method.. .
08/28/14
20140241390
Semiconductor light emitting device and method for manufacturing same
According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers.
08/28/14
20140241389
Semiconductor light emitting device and method for manufacturing same
According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers.
08/28/14
20140240827
Stereoscopic image display device
A stereoscopic image display device includes: a display panel on which pixels each constituted with a plurality of sub-pixels formed with electro-optic elements by corresponding to parallax images are arranged in matrix; and an optical module which distributes light emitted from the pixels arranged in the first and second directions to different directions from each other along the first and second directions, respectively. The display panel includes first and second non-control regions which are the regions existing between boundaries of apertures of the sub-pixels where control of electric-optic conversion cannot be done.
08/28/14
20140239399
Semiconductor device having compressively strained channel region and method of making same
A semiconductor device and method making it utilize a three-dimensional channel region comprising a core of a first semiconductor material and an epitaxial covering of a second semiconductor material. The first and second semiconductor materials have respectively different lattice constants, thereby to create a strain in the epitaxial covering.
08/28/14
20140239354
Finfets and methods for forming the same
A finfet and methods for forming a finfet are disclosed. A structure comprises a substrate, a fin, a gate dielectric, and a gate electrode.
08/28/14
20140239347
Structure and method for defect passivation to reduce junction leakage for finfet device
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate of a first semiconductor material; shallow trench isolation (sti) features formed in the semiconductor substrate; and a fin-like active region of a second semiconductor material epitaxy grown on the semiconductor substrate.
08/28/14
20140239345
Strained transistor integration for cmos
Various embodiments of the invention relate to a cmos device having (1) an nmos channel of silicon material selectively deposited on a first area of a graded silicon germanium substrate such that the selectively deposited silicon material experiences a tensile strain caused by the lattice spacing of the silicon material being smaller than the lattice spacing of the graded silicon germanium substrate material at the first area, and (2) a pmos channel of silicon germanium material selectively deposited on a second area of the substrate such that the selectively deposited silicon germanium material experiences a compressive strain caused by the lattice spacing of the selectively deposited silicon germanium material being larger than the lattice spacing of the graded silicon germanium substrate material at the second area.. .
08/28/14
20140239307
Reo gate dielectric for iii-n device on si substrate
A rare earth oxide gate dielectric on iii-n material grown on a silicon substrate includes a single crystal stress compensating template positioned on a silicon substrate. The stress compensating template is substantially crystal lattice matched to the surface of the silicon substrate.
08/21/14
20140236963
Image retrieval method
“a system and method for linking a hash code to a portion of an image. A plurality of lattice points is selected in a multidimensional lattice to form a smallest enclosing region about a feature vector representing the portion of the image and a lattice point is determined from the selected plurality of lattice points according to a distribution criteria.
08/21/14
20140235038
Semiconductor device and method of forming epitaxial layer
A method for forming epitaxial layer is disclosed. The method includes the steps of providing a semiconductor substrate, and forming an undoped first epitaxial layer in the semiconductor substrate.
08/21/14
20140233163
Metal structures having hardened surfaces with three-dimensional topologies
Forming a 3d topology by forming a monolayer of nano-particles on a stainless steel surface, masking the stainless steel surface forming at least one unmasked regions, the unmasked region having an average density of nano-particles less than a critical average density, and introducing a plurality of exogenous atoms into the stainless steel surface only in the unmasked regions, the exogenous atoms causing the associated metal lattice to expand and harden and have an increase corrosion resistance, thereby selectively forming a 3d topology on the stainless steel surface.. .
08/21/14
20140232444
Self-powered timer apparatus
A method is provided for implementing a timer using a floating-gate transistor. The method includes: injecting a charge into a floating-gate transistor at an initial time, where a gate terminal of the floating-gate transistor is comprised of polysilicon encased by an insulating material; creating lattice imperfections at boundary of the polysilicon to cause leakage from the floating-gate transistor; measuring current read out from the floating-gate transistor at a time subsequent to the initial time; and determining an amount of time between the initial time and the subsequent time using the measured current..
08/21/14
20140232400
Object discrimination method using ultra-low magnetic field nuclear magnetic resonance and an object discrimination apparatus of the same
Provided are an object discrimination method and an object discrimination apparatus using an ultra-low magnetic field nuclear magnetic resonance (nmr). The method includes measuring the respective spin-lattice relaxation times at a plurality of strengths of prepolarization magnetic fields with respect to a measurement target and classifying the measurement target using the spin-lattice relaxation times..
08/21/14
20140232391
Rotating frame pulsed nuclear magnetic resonance spectroscopy
An nmr method and apparatus for analyzing a sample of interest applies a static magnetic field together with rf pulses of oscillating magnetic field across a sample volume that encompasses the sample of interest. The rf pulses are defined by a pulse sequence that includes a plurality of measurement segments configured to characterize a plurality of relaxation parameters related to relaxation of nuclear magnetization of the sample of interest.
08/21/14
20140231871
Methods of containing defects for non-silicon device engineering
An apparatus including a device including a channel material having a first lattice structure on a well of a well material having a matched lattice structure in a buffer material having a second lattice structure that is different than the first lattice structure. A method including forming a trench in a buffer material; forming an n-type well material in the trench, the n-type well material having a lattice structure that is different than a lattice structure of the buffer material; and forming an n-type transistor.
08/21/14
20140231818
Aln cap grown on gan/reo/silicon substrate structure
Iii-n material grown on a silicon substrate includes a single crystal rare earth oxide layer positioned on a silicon substrate. The rare earth oxide is substantially crystal lattice matched to the surface of the silicon substrate.
08/21/14
20140231817
Iii-n material grown on alo/aln buffer on si substrate
Iii-n material grown on a silicon substrate includes a single crystal buffer positioned on a silicon substrate. The buffer is substantially crystal lattice matched to the surface of the silicon substrate and includes aluminum oxynitride adjacent the substrate and aluminum nitride adjacent the upper surface.
08/21/14
20140231745
P-side layers for short wavelength light emitters
A light emitting device includes a p-side heterostructure having a short period superlattice (spsl) formed of alternating layers of alxhighga1-xhighn doped with a p-type dopant and alxlowga1-xlown doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the spsl has a thickness of less than or equal to about six bi-layers of algan..
08/21/14
20140231668
Electron beam lithography device and lithographic method
A high-accuracy and high-speed lithographic pattern is acquired by forming a square lattice matrix beam group with an interval which is an integral multiple of a beam size in a two-dimensional plane, switching on and off the mesh of a device to be drawn by a bitmap signal, forming a desired beam shape, deflecting the beam to a necessary position, and radiating a beam with a whole blanker being opened after the beam state is stabilized. On and off signals and a vector scan signal of each beam are provided, and the whole blanker is released after the beam is stabilized, and thus high-accuracy and high-speed lithography is performed with a small amount of data.
08/21/14
20140231606
Removable hanging device
A removable hanging device configured to be retained within one of a lattice fence and a chain-link fence is disclosed, wherein the hanging device includes a retaining element having a substantially square cross-section configured to be received in a square opening formed in a fence, a hanger body configured to allow an article to be supported thereby, and a shaft connecting the retaining element to the hanger body. The retaining element is aligned with and extended through the square opening of the fence prior to being rotated to orient a top surface of the hanger body parallel to a ground surface.
08/21/14
20140231526
Code reading device and code reading method
A code reading device includes a neighbor searching and voting unit that, for each of a part of dot marks located in a matrix displaced from virtual lattice points, votes on coordinate values of four neighboring dot marks, using each of the part of the dot marks as a reference point, in a plane; a direction detecting unit that determines first and second directions from the voting results; an order determining unit that determines a raster order for the part of the dot marks based on the directions; and a code detecting unit that detects a relative position of each of lattice points determined based on coordinate values of the part of the dot marks and the raster order, to a closest dot mark among the part of the dot marks according to the raster order, thereby encoding the part of the dot marks to provide the positional information.. .
08/21/14
20140231261
Dialyzer clamp
A clamping device for a dialyzer includes a holding member having a supply port and a discharge port for permitting a liquid to be treated to flow through the desalination chambers and the concentration chambers; a clamping member for clamping the holding member by a certain clamping pressure; a lattice structure having a contact portion configured to be brought into contact with an electrode frame or be brought into contact with an electrode frame through a certain plate-shaped member such that the clamping member clamps the electrode frame, the chamber frames and the exchange membranes through the contact portion by tightening the clamping members; and the lattice structure having a pitch width of at least 10 mm and at most 50 mm.. .
08/14/14
20140229705
Analog processor comprising quantum devices
Analog processors for solving various computational problems are provided. Such analog processors comprise a plurality of quantum devices, arranged in a lattice, together with a plurality of coupling devices.
08/14/14
20140226942
Multicore optical fiber
The present invention relates to a multicore optical fiber having a structure for suppressing core-to-core crosstalk. The multicore optical fiber (100a) comprises a plurality of cores extending along a predetermined axis while being arranged like a hexagonal lattice on a cross section perpendicular to the axis and a cladding region (120) integrally surrounding the plurality of cores.
08/14/14
20140226730
Methods and systems for processing latticed time-skewed video streams
An apparatus for facilitating reception of multiple representations of a video signal. In one embodiment, the apparatus includes a mechanism for receiving plural representations of the video signal corresponding to plural decimated versions of the video signal, associating pictures of the received plural representations of the video signal, and outputting pictures corresponding to information from associated pictures in accordance with a relative temporal order..
08/14/14
20140225703
Magnetic material and coil component
A magnetic material includes a grain compact in which metal grains having oxide films are compacted, wherein the metal grains are constituted by fe—si-m soft magnetic alloy (where m represents a metal element that oxidizes more easily than iron), the metal grains in the grain compact are mutually bonded with adjacent metal grains by inter-bonding of their oxide films, and at least some of this bonding of oxide films takes the form of bonding of crystalline oxides, or preferably at least some of the bonding of oxides is based on continuous lattice bond. A coil component has a coil on an interior or surface of an element body wherein the element body uses the magnetic material..
08/14/14
20140225127
Monocrystalline sic substrate with a non-homogeneous lattice plane course
A method is used for producing an sic volume monocrystal by sublimation growth. During growth, by sublimation of a powdery sic source material and by transport of the sublimated gaseous components into the crystal growth region, an sic growth gas phase is produced there.
08/14/14
20140225123
Reo/alo/aln template for iii-n material growth on silicon
A iii-n template formed on a silicon substrate includes a distributed bragg reflector positioned on the silicon substrate. The distributed bragg reflector is substantially crystal lattice matched to the surface of the silicon substrate.
08/14/14
20140225065
Non-planar gate all-around device and method of fabrication thereof
A non-planar gate all-around device and method of fabrication thereby are described. In one embodiment, the device includes a substrate having a top surface with a first lattice constant.
08/14/14
20140225064
Barrier infrared detectors on lattice mismatch substrates
Systems and methods of implementing barrier infrared detectors on lattice mismatched substrates are provided. The barrier infrared detector systems combine an active detector structure (e.g., contact/barrier/absorber pairs) with a non-lattice matched substrate through a multi-layered transitional structure that forms a virtual substrate that can be strain balanced with the detector structure.
08/14/14
20140225060
Group iii nitride semiconductor light-emitting device and method for producing the same
The present invention provides a group iii nitride semiconductor light-emitting device exhibiting high light efficiency achieved by relaxing a piezoelectric field generated in a light-emitting layer without deteriorating the crystal quality of the light-emitting layer, and a method for producing the same. The light-emitting device has a light-emitting layer in which layer units are repeatedly deposited.
08/14/14
20140225059
Led with improved injection efficiency
A light-emitting device having an n-type semiconductor layer having a plurality of pits with planar regions between the pits, the pits being characterized by sidewalk that intersect the planar regions is disclosed. A plurality of alternating sub-layers of materials having different bandgaps is deposited on the n-type semiconductor layer.
08/14/14
20140223835
Alloys with low coefficient of thermal expansion as pdc catalysts and binders
A cutting table includes a lattice structure and a catalyst material deposited within voids formed within the lattice structure. The catalyst material is deposited in the voids during a sintering process that forms the lattice structure.
08/07/14
20140220764
Thin film wafer transfer and structure for electronic devices
A method for wafer transfer includes forming a spreading layer, including graphene, on a single crystalline sic substrate. A semiconductor layer including one or more layers is formed on and is lattice matched to the crystalline sic layer.
08/07/14
20140220306
Transparent film having micro-convexoconcave structure on surface thereof, method for producing the same, and base film used in production of transparent film
The present invention relates to a transparent film having a cured layer, wherein the cured layer having a micro-convexoconcave structure with the average period of a convex section or a concave section of 20 nm to 400 nm is formed on a rough surface of a base film obtained from an acrylic resin having a rough surface in which a maximum valley depth (pv) is 0.1 to 3 μm and an average length (rsm) of a contour curve element is 10 μm or less; and the number of lattice in the cured layer adhered to the base film is 51 or more when a cross cut test is performed using 100 lattices at an interval of 2 mm.. .
08/07/14
20140220294
Catalyst supporting body and method of manufacturing the same
A catalyst supporting body has a porous honeycomb base body having a porosity within a range of 40 to 60 vol. %.
08/07/14
20140219800
Power generation apparatus and ship propelling apparatus including buoyancy body as well as web-structured wing portions provided thereto
The present invention relates to various types of power generation apparatuses and ship propelling apparatuses including a buoyancy body as well as wing portions thereto, which include wing frames with a multistage, lattice web structure foldable and rollable wings which are connected to the wing frames, wherein the power generation apparatus includes a submersible buoyancy body which has one closed end and the other open end as well as a buoyancy space formed therein, a rotary body which is rotatably connected inside the submersible buoyancy body and has a first wing portion mounted on the other end thereof, and a power generation means which is disposed between the submersible buoyancy body and the rotary body to generate electricity.. .
08/07/14
20140219799
Stationary co-axial multi-rotor wind turbine supported by continuous central driveshaft
Multiple horizontal axis type rotors are coaxially attached along the upper section of an elongate torque transmitting tower/driveshaft, the tower/driveshaft projects upward from a cantilevered bearing means, and is bent downwind, until the rotors become sufficiently aligned with the wind to rotate the entire tower/driveshaft, power is drawn from the shaft at the base. Surface mount, subsurface mount, and marine installations, including a sailboat, are disclosed.
08/07/14
20140219602
Broadband, group index independent, and ultra-low loss coupling into slow light slotted photonic crystal waveguides
The present invention provides a waveguide coupler configured to optically couple a strip waveguide to a first slot photonic crystal waveguide, wherein the slot photonic crystal waveguide has a lattice constant, an air hole diameter, a slot width and a first line defect waveguide width. The waveguide coupler includes a group reflective index taper having a second slot photonic crystal waveguide disposed between and aligned with the first slot photonic crystal waveguide and the strip waveguide.


Popular terms: [SEARCH]

Lattice topics: Semiconductor, Semiconductor Device, Semiconductor Material, Crystallin, Disconnect, Transistors, Replacement Gate, Semiconductor Devices, Dislocations, Dislocation, Image Processing, Coordinates, Surface Plasmon Polariton, Antenna Array

Follow us on Twitter
twitter icon@FreshPatents

###

This listing is a sample listing of patent applications related to Lattice for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Lattice with additional patents listed. Browse our RSS directory or Search for other possible listings.
     SHARE
  
         


FreshNews promo



0.4315

3117

1 - 1 - 72