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L Dopa patents

      

This page is updated frequently with new L Dopa-related patent applications.




 Vertical transistor and local interconnect structure patent thumbnailVertical transistor and local interconnect structure
A first patterned stack and a second patterned stack are formed over a substrate, each of which includes a bottom semiconductor layer, a bottom dielectric spacer layer, a conductive material layer, and a top dielectric spacer layer. Gate dielectrics and vertical semiconductor portions are sequentially formed on each patterned stack.
Sandisk 3d Llc


 Three-dimensional memory device containing plural select gate transistors having different characteristics and  making thereof patent thumbnailThree-dimensional memory device containing plural select gate transistors having different characteristics and making thereof
A stack of material layers includes first material layers, second material layers located between a respective pair of an overlying first material layer and an underlying first material layer, and at least one temporary material layer located between a respective pair of an overlying first material layer and an underlying first material layer. After formation of a memory opening and a memory stack structure, at least one first backside recess is formed by removing the at least one temporary material layer and adjoining portions of a memory film.
Sandisk Technologies, Inc.


 Method of detection of volatile organic compounds using liquid crystals that form a blue phase; and device for stabilization and thickness control of liquid crystal films patent thumbnailMethod of detection of volatile organic compounds using liquid crystals that form a blue phase; and device for stabilization and thickness control of liquid crystal films
Methods and compositions for detecting a targeted analyte, such as volatile organic compound (vocs), are disclosed. Specifically, a cholesteric liquid crystal composition comprising a nematic liquid crystal and a chiral dopant transitions to a liquid crystal blue phase or undergoes other optical changes when in contact with a sample containing the analyte.

 Method and apparatus to tune threshold voltage of device with high angle source/drain implants patent thumbnailMethod and apparatus to tune threshold voltage of device with high angle source/drain implants
A method for tuning a threshold voltage of a semiconductor device includes implanting at least one dopant in a semiconductor substrate at an angle to form a source region and/or a drain region of a transistor. The angle is oblique to a surface of the substrate.
Texas Instruments Incorporated


 Semiconductor structure with multiple transistors having various threshold voltages patent thumbnailSemiconductor structure with multiple transistors having various threshold voltages
A semiconductor structure includes first, second, and third transistor elements each having a first screening region concurrently formed therein. A second screening region is formed in the second and third transistor elements such that there is at least one characteristic of the screening region in the second transistor element that is different than the second screening region in the third transistor element.
Mie Fujitsu Semiconductor Limited


 Semiconductor devices including channel dopant layer patent thumbnailSemiconductor devices including channel dopant layer
A semiconductor device includes a semiconductor substrate including a well dopant layer having a first conductivity type, a gate electrode on the well dopant layer, a channel dopant layer in the well dopant layer and spaced apart from a top surface of the semiconductor substrate, a channel region between the gate electrode and the channel dopant layer, and source/drain regions in the well dopant layer at both sides of the gate electrode. The channel dopant layer and the channel region have the first conductivity type.
Samsung Electronics Co., Ltd.


 Electrically conductive thin films patent thumbnailElectrically conductive thin films
A dopant disposed in the compound of chemical formula 1, wherein the dopant is a metal dopant that is different from me and has an oxidation state which is greater than an oxidation state of me, a non-metal dopant having a greater number of valence electrons than a number of valence electrons of a in chemical formula 1, or a combination thereof, and wherein the compound of chemical formula 1 includes a chemical bond which includes a valence electron of an s orbital of me.. .

 High hydroxyl tio2-sio2 glass patent thumbnailHigh hydroxyl tio2-sio2 glass
Ultralow expansion titania-silica glass. The glass has high hydroxyl content and optionally include one or more dopants.
Corning Incorporated


 Semiconductor device with auxiliary structure including deep level dopants patent thumbnailSemiconductor device with auxiliary structure including deep level dopants
A semiconductor device includes transistor cells formed along a first surface at a front side of a semiconductor body in a transistor cell area. A drift zone structure forms first pn junctions with body zones of the transistor cells.

 Method and structure for transistors using gate stack dopants with minimal nitrogen penetration patent thumbnailMethod and structure for transistors using gate stack dopants with minimal nitrogen penetration
Embodiments of the present invention provide cmos structures and methods of gate formation that combine a keep-cap scheme in which a protective layer is maintained on a pfet during a replacement metal gate process that utilizes an nfet-first process flow. Selective nitridation is used to provide nitrogen to the nfet while the pfet is protected from nitrogen by the keep-cap.

Method for doping a gan-base semiconductor


The method for doping a gan-base semiconductor to fabricate a p-n junction includes a first step consisting in providing a substrate including a gan-base semiconductor material layer covered by a silicon-base mask. The method includes a second step of performing implantation of impurities in the mask so as to transfer additional dopant impurities of si type by diffusion from the mask to the semiconductor material layer to form an n-type area adjacent to a p-type area.
Commissariat Á L'energie Atomique Et Aux Energies Alternatives


Nanofibers from substituted polyaniline and methods of synthesizing and using the same


Embodiments of this invention are directed to substituted polyaniline nanofibers and methods of synthesizing and using the same. The invention is also directed to polyaniline derivatives that can be synthesized without the need for templates or functional dopants by using an initiator as part of a reaction mixture..
The Regents Of The University Of California


Display having a transparent conductive oxide layer comprising metal doped zinc oxide applied by sputtering


The invention provides an alternative liquid crystal and light emitting display which include at least one transparent conductive oxide layers which comprises a zinc oxide doped with a group iii, iv, v, or transition metal dopant, and sputtered from a sputtering target. In a further embodiment, this transparent conductive oxide layer can optionally include a layer of a patternable tco, such as ito..
Sci Engineered Materials, Inc.


Channel region dopant control in fin field effect transistor


A dummy gate structure straddling at least one semiconductor fin is formed on a substrate. Active semiconductor regions and raised active semiconductor regions may be formed.
International Business Machines Corporation


Solid state catholytes and electrolytes for energy storage devices


The present invention provides an energy storage device comprising a cathode region or other element. The device has a major active region comprising a plurality of first active regions spatially disposed within the cathode region.
Quantumscape Corporation


Solid state catholytes and electrolytes for energy storage devices


The present invention provides an energy storage device comprising a cathode region or other element. The device has a major active region comprising a plurality of first active regions spatially disposed within the cathode region.
Quantumscape Corporation


Methods for forming a molecular dopant monolayer on a substrate


Methods for forming a conformal dopant monolayer on a substrate are provided. In one embodiment, a method for forming a semi-conductor device on a substrate includes forming a charged layer on a silicon containing surface disposed on a substrate, wherein the charged layer has a first charge, and forming a dopant monolayer on the charged layer, wherein dopants formed in the dopant monolayer include at least one of a group iii or group v atoms..
Applied Materials, Inc.


High energy cathode materials and methods of making and use


A material for forming an electrode. The material is a lithium phosphate with a stoichiometric excess of lithium and dopants, such as alkaline earth metal or transition metal dopants, in lithium sites and other sites..
Tianjin B&m Science And Technology Joint-stock Co., Ltd.


Te-based thermoelectric material having complex crystal structure by addition of interstitial dopant


This invention relates to a te-based thermoelectric material having stacking faults by addition of an interstitial dopant, including unit cells configured such that a-b-a-c-a elements are stacked to five layers, in which a element of a terminal of a unit cell and a element of a terminal of another unit cell are repeatedly stacked by a van der waals interaction, wherein an interstitial element as the dopant is located at an interstitial position between the repeatedly stacked a elements adjacent to each other, thus generating stacking faults of the repeatedly stacked unit cells to thereby form a twin as well as a complex crystal structure different from the unit cells (where a is te or se, b is bi or sb, and c is bi or sb).. .
Korea Electrotechnology Research Institute


Solar cell, solar cell module, and production solar cell


A solar cell is disclosed that comprises a photoelectric conversion body with first and second principle surfaces, a first transparent conductive oxide layer on the first principle surface, and comprising indium oxide containing a metal dopant, a first electrode on the first transparent conductive oxide layer, a second transparent conductive oxide layer on the second principle surface, and comprising indium oxide not containing a metal dopant but containing hydrogen and a second electrode on the second transparent conductive oxide layer.. .
Panasonic Intellectual Property Management Co., Ltd.


Method and forming corona shielding


A method and device for forming corona shielding on a winding bar for high-voltage machines has end corona shielding in a first section and outer corona shielding in a second section that adjoins the first section. The method includes providing a first composition, including a carrier material and a first filler therein and a first electrical resistance; providing a second composition, including the same carrier material and a second filler therein and a second electrical resistance, wherein the first and second fillers contain an identical dopable semiconductor material, doping of which determines electrical resistance of the first and second fillers, and wherein the second resistance differs from the first resistance; applying the first composition in the first section to form the end corona shielding; and applying the second composition in the second section to form the outer corona shielding..
Siemens Aktiengesellschaft


Three-dimensional semiconductor memory device


A semiconductor memory device is provided including first and second cell strings formed on a substrate, the first and second cell strings jointly connected to a bit line, wherein each of the first and second cell strings includes a ground selection unit, a memory cell, and first and second string selection units sequentially formed on the substrate to be connected to each other, wherein the ground selection unit is connected to a ground selection line, the memory cell is connected to a word line, the first string selection unit is connected to a first string selection line, and the second string selection unit is connected to a second string selection line, and wherein the second string selection unit of the first cell string has a channel dopant region.. .
Samsung Electronics Co., Ltd.


Arrays comprising vertically-oriented transistors and integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material


An array includes vertically-oriented transistors, rows of access lines, and columns of data/sense lines. Individual of the rows include an access line interconnecting transistors in that row.
Micron Technology, Inc.


Charge transporting semi-conducting material and semi-conducting device


The present invention relates to a charge transporting semi-conducting material comprising: a) optionally at least one electrical dopant, and b) at least one cross-linked charge-transporting polymer comprising 1,2,3-triazole cross-linking units, a method for its preparation and a semiconducting device comprising the charge transporting semi-conducting material.. .
Novaled Gmbh


Advanced transistors with threshold voltage set dopant structures


An advanced transistor with threshold voltage set dopant structure includes a gate with length lg and a well doped to have a first concentration of a dopant. A screening region is positioned between the well and the gate and has a second concentration of dopant greater than 5×1018 dopant atoms per cm3.
Mie Fujitsu Semiconductor Limited


Compositions and methods for parkinson's disease treatment by bdnf-flag gene transfer through neurotensin polyplex to nigral dopamine neuro


The present invention pertains to the field of genomics and nanotechnology, specifically to the in vivo gene expression technologies and their application in gene therapy. It consists of the performance of the nts-polyplex nanocomplex, which can carry nucleic acids to the neurons, involving neurotrophic therapy to treat neurodegenerative diseases.
Centro De InvestigaciÓn Y De Estudios Avanzados Del Instituto PolitÉcnico Nacional


Low cost transistors


An integrated circuit containing an analog mos transistor has an implant mask for a well which blocks well dopants from two diluted regions at edges of the gate, but exposes a channel region to the well dopants. A thermal drive step diffuses the implanted well dopants across the two diluted regions to form a continuous well with lower doping densities in the two diluted regions.
Texas Instruments Incorporated


3d tcad simulation


A first representation of an integrated circuit undergoing processing is transformed into a second representation. The second representation including additional dopants relative to the first representation.
Synopsys, Inc.


Heterogeneous catalysts


Heterogeneous catalysts with optional dopants are provided. The catalysts are useful in a variety of catalytic reactions, for example, the oxidative coupling of methane to c2+ hydrocarbons.
Siluria Technologies, Inc.


Channel region dopant control in fin field effect transistor


A dummy gate structure straddling at least one semiconductor fin is formed on a substrate. Active semiconductor regions and raised active semiconductor regions may be formed.
International Business Machines Corporation


Structure and method to obtain eot scaled dielectric stacks


Equivalent oxide thickness (eot) scaled high k/metal gate stacks are provided in which the capacitance bottleneck of the interfacial layer is substantially eliminated, with minimal compromise on the mobility of carriers in the channel of the device. In one embodiment, the aforementioned eot scaled high k/metal gate stacks are achieved by increasing the dielectric constant of the interfacial layer to a value that is greater than the originally formed interfacial layer, i.e., the interfacial layer prior to diffusion of a high k material dopant element therein.
International Business Machines Corporation


Structure and method to obtain eot scaled dielectric stacks


Equivalent oxide thickness (eot) scaled high k/metal gate stacks are provided in which the capacitance bottleneck of the interfacial layer is substantially eliminated, with minimal compromise on the mobility of carriers in the channel of the device. In one embodiment, the aforementioned eot scaled high k/metal gate stacks are achieved by increasing the dielectric constant of the interfacial layer to a value that is greater than the originally formed interfacial layer, i.e., the interfacial layer prior to diffusion of a high k material dopant element therein.
International Business Machines Corporation


Preform for an optical waveguide and a fiber with non-circular core


Preform for an optical waveguide containing a core with a non-circular geometry and at least one cladding layer, in which the dopand concentration of the cladding layer is increased compared to the dopand concentration of a preform with circular core geometry and identical na. A method for the production of a preform for an optical fiber is provided.
J-plasma Gmbh


Transparent electronic system and method


A system and method for transparent diamond semiconductor electronics are provided. The system may include a transparent substrate, a diamond active layer, a conductive layer, and an application that incorporates the transparent layer, the diamond layer, and the conductive layer.

Polymer ligands for nanoparticles


The disclosure is directed to polymer ligands that are optimally suited for surface-functionalizing magnetic nanoparticles. The amphiphilic polymers are prepared by coupling several amine-terminated anchoring groups, polyethylene glycol moieties, and reactive groups onto a poly(isobutylene-alt-maleic anhydride) (pima) chain.

Structure and method to obtain eot scaled dielectric stacks


Equivalent oxide thickness (eot) scaled high k/metal gate stacks are provided in which the capacitance bottleneck of the interfacial layer is substantially eliminated, with minimal compromise on the mobility of carriers in the channel of the device. In one embodiment, the aforementioned eot scaled high k/metal gate stacks are achieved by increasing the dielectric constant of the interfacial layer to a value that is greater than the originally formed interfacial layer, i.e., the interfacial layer prior to diffusion of a high k material dopant element therein.
International Business Machines Corporation


Structure and method to obtain eot scaled dielectric stacks


Equivalent oxide thickness (eot) scaled high k/metal gate stacks are provided in which the capacitance bottleneck of the interfacial layer is substantially eliminated, with minimal compromise on the mobility of carriers in the channel of the device. In one embodiment, the aforementioned eot scaled high k/metal gate stacks are achieved by increasing the dielectric constant of the interfacial layer to a value that is greater than the originally formed interfacial layer, i.e., the interfacial layer prior to diffusion of a high k material dopant element therein.
International Business Machines Corporation


Semiconductor device including at least one type of deep-level dopant


A semiconductor device includes a first semiconductor region including a first semiconductor material and a second semiconductor region adjoining the first semiconductor region, the second semiconductor region including a second semiconductor material different from the first semiconductor material. The semiconductor device further includes at least one of a drift zone and a base zone in the first semiconductor region, and at least one type of deep-level dopant in an emitter region of the second semiconductor region.
Infineon Technologies Ag


Method and system for controlling resistivity in ingots made of compensated feedstock silicon


Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium.
Silicor Materials Inc.


Semiconductor device and formation thereof


A semiconductor device and method of forming the same are described. A semiconductor device includes an active area adjacent a gate structure.
Taiwan Semiconductor Manufacturing Company Limited


N-type field effect transistors, arrays comprising n-type vertically-oriented transistors, methods of forming an n-type field effect transistor, and methods of forming an array comprising vertically-oriented n-type transistors


An n-type field effect transistor includes silicon-comprising semiconductor material comprising a pair of source/drain regions having a channel region there-between. At least one of the source/drain regions is conductively doped n-type with at least one of as and p.
Micron Technology, Inc.


Structure and alignment marks


The alignment mark and method for making the same are described. In one embodiment, a semiconductor structure includes a plurality of gate stacks formed on the semiconductor substrate and configured as an alignment mark; doped features formed in the semiconductor substrate and disposed on sides of each of the plurality of gate stacks; and channel regions underlying the plurality of gate stacks and free of channel dopant..
Taiwan Semiconductor Manufacturing Company, Ltd.


Systems and methods for bidirectional device fabrication


Methods and systems for double-sided semiconductor device fabrication. Devices having multiple leads on each surface can be fabricated using a high-temperature-resistant handle wafer and a medium-temperature-resistant handle wafer.
Ideal Power Inc.


Electroluminescent compositions


The present invention relates to compositions capable of emitting circularly polarized electroluminescence comprising an electroluminescent polymer and a chiral dopant, processes for the synthesis of such compositions and light emitting devices incorporating such compositions.. .
Imperial Innovations Limited


Solid state catholyte or electrolyte for battery using liampbsc (m=si, ge, and/or sn)


The present invention provides an energy storage device comprising a cathode region or other element. The device has a major active region comprising a plurality of first active regions spatially disposed within the cathode region.
Quantumscape Corporation


Isolation structures and methods of forming the same


A method of forming a semiconductor structure includes implanting neutral dopants in a first region of a substrate to form a first etching stop feature, the first etching stop feature having a depth d1. The method further includes implanting neutral dopants in a second region of the substrate to form a second etching stop feature, wherein the second etching stop feature has a depth d2, and d1 is different from d2.
Taiwan Semiconductor Manufacturing Company, Ltd.


Semiconductor device


A semiconductor device includes a transistor region and diode region. A plurality of transistors is in the transistor region and at least one diode is in the diode region.
Kabushiki Kaisha Toshiba


Novel modulators of cortical dopaminergic- and nmda-receptor-mediated glutamatergic neurotransmission


The present invention relates to novel substituted phenoxyethylamine derivatives, useful as modulators of cortical and basal ganglia dopaminergic and n-methyl-d-aspartate (nmda) receptor-mediated glutamatergic neurotransmission. In other aspects the invention relates to the use of these compounds in a method for therapy and to pharmaceutical compositions comprising the compounds of the invention..
Integrative Research Laboratories Sweden Ab


Color liquid crystal display panel and manufacturing method thereof


The present invention provides a color liquid crystal display panel and a manufacturing method thereof. The color liquid crystal display panel includes: a first substrate (2), a second substrate (3), and dye-doped liquid crystal layers (4) hermetically sealed between the first substrate (2) and the second substrate (3).
Shenzhen China Star Optoelectronics Technology Co. Ltd.


Composites incorporating a conductive polymer nanofiber network


Methods of forming composites that incorporate networks of conductive polymer nanofibers are provided. Networks of less-than conductive polymers are first formed and then doped with a chemical dopant to provide networks of conductive polymers.
University Of Washington Through Its Center For Commercialization


Diamond semiconductor system and method


Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond material having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/vs to the diamond lattice at 100 kpa and 300k.

Liquid crystal display


A liquid crystal display includes: a first insulation substrate; a gate line and a data line formed on the first insulation substrate; a first electrode and a second electrode formed on the gate line and the data line and overlapping each other via an insulating layer interposed therebetween; a second insulation substrate facing the first insulation substrate; and a chiral dopant inserted between the first insulation substrate and the second insulation substrate. A content of the chiral dopant may be within about 1%, and liquid crystal molecules of a liquid crystal layer may be twisted with a pitch of about 10 μm to about 100 μm by the chiral dopant..
Samsung Display Co., Ltd.


Enabling high activation of dopants in indium-aluminum-galium-nitride material system using hot implantation and nanosecond annealing


Embodiments of the present disclosure generally relate to doping and annealing substrates. The substrates may be doped during a hot implantation process, and subsequently annealed using a nanosecond annealing process.
Applied Materials, Inc.


Semiconductor device and manufacturing the same


A semiconductor device includes a vertical igfet in a first area of a semiconductor body, the vertical igfet having a drift zone between a body zone and a drain electrode, the drift zone having a vertical dopant profile of a first conductivity type being a superposition of a first dopant profile declining with increasing distance from the drain electrode and dominating the vertical dopant profile in a first zone next to the drain electrode and a second dopant profile being a broadened peak dopant profile and dominating the vertical dopant profile in a second zone next to the body zone.. .
Infineon Technologies Ag


Efficient integration of cmos with poly resistor


Device and methods for forming a device are presented. The method includes providing a substrate.
Globalfoundries Singapore Pte. Ltd.


Process method and structure for high voltage mosfets


This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches formed at a top portion of the semiconductor substrate extending laterally across the semiconductor substrate along a longitudinal direction each having a nonlinear portion comprising a sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface.

Incorporating metals, metal oxides and compounds on the inner and outer surfaces of nanotubes and between the walls of the nanotubes and preparation thereof


A multi-walled titanium-based nanotube array containing metal or non-metal dopants is formed, in which the dopants are in the form of ions, compounds, clusters and particles located on at least one of a surface, inter-wall space and core of the nanotube. The structure can include multiple dopants, in the form of metal or non-metal ions, compounds, clusters or particles.
The Hong Kong University Of Science And Technology


Combination of dopamine agonists plus first phase insulin secretagogues for the treatment of metabolic disorders


The present invention is directed to a method of treating a metabolic disorder or key elements of a metabolic disorder such method comprising the use of an agent(s) that increases central dopaminergic activity plus a first-phase insulin secretagouge.. .
Veroscience Llc


Liquid crystal display device


A liquid crystal display device comprises a first substrate, a second substrate, a liquid crystal layer, a first polarizer, a second polarizer and a first electrode layer. The liquid crystal layer is disposed between the first and the second substrates, and comprises a liquid crystal mixture comprising a chiral dopant.
Innolux Corporation


Doped semiconductor films and processing


A method of forming a semiconductor material incorporating an electrical dopant is disclosed. In one aspect, a method of incorporating dopant in a semiconductor film comprises forming a first semiconductor material incorporating the dopant at a first dopant concentration and preferentially etching a portion of the first semiconductor material, wherein etching leaves a first etched semiconductor material incorporating the dopant at a second dopant concentration higher than the first dopant concentration..
Asm Ip Holding B.v.


Doping of drilling mud with a mineralogical compound


Presented are methods and systems for tracking and assessing drilling fluid flow and performance and, accordingly, detecting drilling mud return depth. The drilling mud is injected with a mineralogical dopant in an amount that does not affect the physical or chemical properties of the drilling mud.
Cgg Services Sa


Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the czochralski method


A method for controlling oxygen precipitation in a single crystal silicon wafer having a wafer resistivity of less than about 10 milliohm-cm is provided so that the wafer has uniformly high oxygen precipitation behavior from the central axis to the circumferential edge. The single crystal silicon wafer comprises an additional dopant selected from among carbon, arsenic, and antimony..

Metal/non-metal co-doped lithium titanate spheres with hierarchical micro/nano architectures for high rate lithium ion batteries


The present invention is to provide a lithium titanate (lto) material for a lithium ion battery. The lto material has hierarchical micro/nano architecture, and comprises a plurality of micron-sized secondary lto spheres, and a plurality of pores incorporated with metal formed by a metal dopant.

Light emitting diode (led) component comprising a phosphor with improved excitation properties


A light emitting diode (led) component comprises an led having a dominant wavelength in a range of from about 425 nm to less than 460 nm and a phosphor in optical communication with the led. The phosphor includes a host lattice comprising yttrium aluminum garnet (yag), and may include an activator comprising ce and a substitutional dopant comprising ga incorporated in the host lattice.

A process method and structure for high voltage mosfets


This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface.

Novel dopamine d3 receptor ligands and preparation and medical uses of the same


The present invention relates to a novel piperazine derivative represented by formula i having an activity for regulating dopamine d3 receptor, stereoisomers thereof, pharmaceutically acceptable salts or solvates, and a pharmaceutical composition comprising the compound, a process for preparing the same, and use thereof in the prevention or treatment of a disease associated with central nervous system dysfunction, such as parkinson's disease, schizophrenia, drug addiction and relapse, as well as kidney protection and immunoregulation, or as a tool for researching d3r function or diseases associated with d3r dysfunction.. .

Method of making a resistive random access memory device with metal-doped resistive switching layer


A method for forming a resistive random access memory (rram) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ald), doping the resistive switching oxide layer with a metal dopant different from metal forming the metal oxide, and forming a second electrode by thermal atomic layer deposition (ald), where the resistive switching layer is interposed between the first electrode and the second electrode.

Transistor with threshold voltage set notch and fabrication thereof


A structure and method of fabrication thereof relate to a deeply depleted channel (ddc) design, allowing cmos based devices to have a reduced σvt compared to conventional bulk cmos and can allow the threshold voltage vt of fets having dopants in the channel region to be set much more precisely. A novel dopant profile indicative of a distinctive notch enables tuning of the vt setting within a precise range.

Charge injection and transport layers


Compositions for use in hole transporting layers (htls) or hole injection layers (hils) are provided, as well as methods of making the compositions and devices fabricated from the compositions. Oled devices can be made.

Pb-free solder bumps with improved mechanical properties


A method of forming an electronic device, comprising providing a semiconductor substrate having a first contact and an undoped electroplated lead-free solder bump formed on the first contact. The method also comprises providing a device package substrate having a second contact and a doped lead-free solder layer on the second contact comprising a fourth row transition metal dopant.

Damping controlled composite magnetic media for heat assisted magnetic recording


A magnetic stack includes a substrate and a magnetic recording layer disposed over the substrate. The magnetic recording layer comprises magnetic crystalline grains and a segregant disposed between grain boundaries of the crystalline grains.

High-concentration active doping in semiconductors and semiconductor devices produced by such doping


In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer.

Substituted amino alcohols as chiral dopants


The invention relates to the use of a substituted, chiral amino alcohol, comprising one or more structural units of the following formula (1), wherein the abbreviations a, y, r1 and r3 to r5 have the following meanings: is a covalent bond or a hydrocarbon group, y is a covalent bond or a hydrocarbon group that can have an oxygen atom at one of its ends through which it is bonded to r1, r1 is an aliphatic or heterocyclic or aromatic radical, the carbon chain of which may be interrupted by one or more b groups, r5 is selected from the group consisting of (a) aliphatic radicals, wherein individual carbon atoms may be replaced by oxygen atoms or carbonyl groups, and wherein the carbon chains of same radicals may be optionally interrupted by a b group, and (b) araliphatic, cycloaliphatic, aromatic and heterocyclic radicals, wherein the carbon chain can be interrupted by one or more b structural elements and/or by one or more d coupling groups, r3, r4 are hydrogen or aliphatic or araliphatic substituents, which are independent of one another, wherein the carbon chain can be interrupted by one or more b groups, b is selected from polymerizable or crosslinkable structural elements from the group comprising c1-c16-alkenyl, c1-c16-alkenyloxy, —c═c—, —ch═ch—coo—, —ch═ch—, —cx═ch—coo— with x═c1-c16-alkyl, and the trans-form of —ooc—ch═ch—coo—, and d is selected from —o—, —nh—, —n(ch3)—, —n(c2h5)—, —so2—, —co—, —coo—, —ch═ch—, —ocoo—, —och2—, ch═n, —cf2cf2—, as a chiral dopant in liquid crystal (mixtures), e.g., in electro-optical systems.. .

Low cost transistors


An integrated circuit containing an analog mos transistor has an implant mask for a well which blocks well dopants from two diluted regions at edges of the gate, but exposes a channel region to the well dopants. A thermal drive step diffuses the implanted well dopants across the two diluted regions to form a continuous well with lower doping densities in the two diluted regions.

Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells


Fabrication of a single crystal silicon solar cell with an insitu epitaxially deposited very highly doped p-type silicon back surface field obviates the need for the conventional aluminum screen printing step, thus enabling a thinner silicon solar cell because of no aluminum induced bow in the cell. Furthermore, fabrication of a single crystal silicon solar cell with insitu epitaxial p-n junction formation and very highly doped n-type silicon front surface field completely avoids the conventional dopant diffusion step and one screen printing step, thus enabling a cheaper manufacturing process..

Super junction semiconductor device


A super junction semiconductor device includes a substrate layer of a first conductivity type and an epitaxial layer adjoining the substrate layer and including first columns of the first conductivity type and second columns of a second conductivity type. The first and second columns extend along a main crystal direction into the epitaxial layer and have vertical dopant profiles perpendicular to the first surface.

Carbon doped resistive switching layers


Provided are carbon doped resistive switching layers, resistive random access memory (reram) cells including these layers, as well as methods of forming thereof. Carbon doping of metal containing materials creates defects in these materials that allow forming and breaking conductive paths as evidenced by resistive switching.

Method for manufacturing of an object having phosphorescent properties


The invention concerns a method for manufacturing of an object having phosphorescent properties, comprising the steps of providing an object having a surface made from aluminium or from an aluminium-based alloy and forming a layer of porous aluminium (hydr)oxide at said surface. The invention is characterized in that the method comprises the step of contacting the layer of porous aluminium (hydr)oxide with one or several solutions containing metal dopant ions such as to allow the metal dopant ions to bind to the layer of porous aluminium (hydr)oxide, wherein at least one of said solutions contains ions of at least one element selected from a first group consisting of calcium (ca), magnesium (mg), strontium (sr) and barium (ba), and wherein at least one of said solutions contains ions of europium (eu).

Electrical contact conductivity via surface doping


An electrical connector for connecting electrical power transmission lines is provided. The electrical connector is capable of conducting 1×106 to 2.5×106 siemens per meter squared (s/m2), and includes a base metal having a surface layer doped with a conductive material dopant.

Isolation structures and methods of forming the same


A method of forming of a semiconductor structure has isolation structures. A substrate having a first region and a second region is provided.

Novel modulators of cortical dopaminergic- and nmda-receptor-mediated glutamatergic neurotransmission


The present invention relates to novel substituted phenoxyethylamine derivatives, useful as modulators of cortical and basal ganglia dopaminergic and n-methyl-d-aspartate (nmda) receptor-mediated glutamatergic neurotransmission. In other aspects the invention relates to the use of these compounds in a method for therapy and to pharmaceutical compositions comprising the compounds of the invention..

2,2'-binaphthalene ester chiral dopants for cholesteric liquid crystal displays


R9 and r10 are independently alkyl, alkoxy, aryl, naphthyl, styryl, alkenyl, cycloalkyl, alkoxyaryl, cycloalkoxy, or heterocyclic all either substituted or unsubstituted, or combine to form a carbocyclic or heterocyclic ring. Also featured are liquid crystal compositions comprising a chiral dopant compound represented by any of structure 2-4..

Liquid-crystalline mixtures


The present invention further relates to the use of the inventive liquid-crystalline mixtures which comprise at least one chiral dopant for production of thermal insulation layers, and to such thermal insulation layers.. .

Cross-coupling of gate conductor line and active region in semiconductor devices


Cross-coupling between a gate conductor and an active region of a semiconductor substrate is provided by forming a gate dielectric layer on the semiconductor substrate and lithographically patterning the gate dielectric layer to form opening therein over a portion of the active region at which electrical contact with the gate conductor is desired. After implanting electrical dopants, a gate conductor layer is deposited and patterned.

Lipon coatings for high voltage and high temperature li-ion battery cathodes


A lithium ion battery includes an anode and a cathode. The cathode includes a lithium, manganese, nickel, and oxygen containing compound.

Partial buried channel transfer device in image sensors


An image sensor pixel includes a photosensitive element, a floating diffusion (“fd”) region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light.

Inductively coupled plasma ion source chamber with dopant material shield


A plasma ion source including a plasma chamber, gas inlets, an rf antenna, an rf window, an extraction plate, a window shield, and a chamber liner. The rf window may be positioned intermediate the rf antenna and the plasma chamber.

Static random access memory cell with single-sided buffer and asymmetric construction


Balanced electrical performance in a static random access memory (sram) cell with an asymmetric context such as a buffer circuit. Each memory cell includes a circuit feature, such as a read buffer, that has larger transistor sizes and features than the other transistors within the cell, and in which the feature asymmetrical influences the smaller cell transistors.

Broadband optical upconversion by energy transfer from dye antenna to upconverting crystal


An optical upconverting nanomaterial includes a nanocrystal, a ligand layer directly bonded to the nanocrystal, and an optical antenna directly or indirectly bonded to the nanocrystal. The nanocrystal includes a transition metal-doped material exhibiting upconversion to optical wavelengths.

Liquid crystal display device


A liquid crystal display device includes a first substrate, a second substrate, a liquid crystal layer disposed between the first substrate and the second substrate, and an electrode group provided on at least one of the first substrate and the second substrate, and that applies an electric field to the liquid crystal layer, wherein the liquid crystal layer contains at least one liquid crystalline compound, and at least one chiral dopant, wherein one of the liquid crystalline compounds contained in the liquid crystal layer develops a blue phase liquid crystal, and wherein the liquid crystal layer has a storage elastic modulus g′ of 4,000 pa or more at 25° c. And 1 hz frequency..

N-type field effect transistors, arrays comprising n-type vertically-oriented transistors, methods of forming an n-type field effect transistor, and methods of forming an array comprising vertically-oriented n-type transistors


An n-type field effect transistor includes silicon-comprising semiconductor material comprising a pair of source/drain regions having a channel region there-between. At least one of the source/drain regions is conductively doped n-type with at least one of as and p.

Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistors


An array includes vertically-oriented transistors, rows of access lines, and columns of data/sense lines. Individual of the rows include an access line interconnecting transistors in that row.

2,2'-binaphthalene ester chiral dopants for cholesteric liquid crystal displays


Also featured are liquid crystal compositions comprising a chiral dopant compound represented by any of structure 2-4 as described in the disclosure.. .

Therapeutic treatment for metabolic syndrome, type 2 diabetes, obesity or prediabetes


The present invention is directed to a method for treating a patient suffering from a metabolic disorder such as the metabolic syndrome, type 2 diabetes, obesity, or prediabetes, and the metabolic sequale of these diseases including cardiovascular, cerebrovascular, renal and hepatic diseases, comprising the step of: administering to a patient suffering from the metabolic syndrome, type 2 diabetes, obesity, or prediabetes a pharmaceutical composition comprising (1) at least one compound that stimulates an increase in central dopaminergic neuronal activity level in the subject, and (2) at least one compound that stimulates a decrease in central noradrenergic neuronal activity level in the subject.. .

Ldmos with accumulation enhancement implant


A lateral double-diffused metal-oxide-semiconductor (ldmos) transistor device includes an enhancement implant region formed in a portion of an accumulation region proximate a p-n junction between body and drift drain regions. The enhancement implant region contains additional dopants of the same conductivity type as the drift drain region.

Liquid crystal display device


A liquid crystal display device includes a thin film transistor substrate, a counter substrate, a liquid crystal layer sandwiched between the thin film transistor substrate and the counter substrate. The thin film transistor substrate includes a first electrode and a second electrode for applying an electric field in a substrate in-plane direction, the first electrode includes a plurality of strip portions which extend in a predetermined direction.

Method of manufacturing semiconductor devices using ion implantation


A manufacturing method provides a semiconductor device with a substrate layer and an epitaxial layer adjoining the substrate layer. The epitaxial layer includes first columns and second columns of different conductivity types.



L Dopa topics:
  • Liquid Crystal
  • Liquid Crystal Display
  • Semiconductor
  • Alignment Layer
  • Implantation
  • Interstitial
  • Enhancement
  • Random Access
  • Semiconductor Substrate
  • Vertical Alignment
  • Anisotropy
  • Semiconductor Device
  • Antiferroelectric
  • Transport Layer
  • Led Device


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