FreshPatents.com Logo
Enter keywords:  

Track companies' patents here: Public Companies RSS Feeds | RSS Feed Home Page
Popular terms

[SEARCH]

L Dopa topics
Liquid Crystal
Liquid Crystal Display
Semiconductor
Alignment Layer
Implantation
Interstitial
Enhancement
Random Access
Semiconductor Substrate
Vertical Alignment
Anisotropy
Semiconductor Device
Antiferroelectric
Transport Layer
Led Device

Follow us on Twitter
twitter icon@FreshPatents

Web & Computing
Cloud Computing
Ecommerce
Search patents
Smartphone patents
Social Media patents
Video patents
Website patents
Web Server
Android patents
Copyright patents
Database patents
Programming patents
Wearable Computing
Webcam patents

Web Companies
Apple patents
Google patents
Adobe patents
Ebay patents
Oracle patents
Yahoo patents

[SEARCH]

L Dopa patents



      
           
This page is updated frequently with new L Dopa-related patent applications. Subscribe to the L Dopa RSS feed to automatically get the update: related L RSS feeds. RSS updates for this page: L Dopa RSS RSS


Pb-free solder bumps with improved mechanical properties

Pb-free solder bumps with improved mechanical properties

Date/App# patent app List of recent L Dopa-related patents
09/25/14
20140284722
 Transistor with threshold voltage set notch and method of fabrication thereof patent thumbnailTransistor with threshold voltage set notch and method of fabrication thereof
A structure and method of fabrication thereof relate to a deeply depleted channel (ddc) design, allowing cmos based devices to have a reduced σvt compared to conventional bulk cmos and can allow the threshold voltage vt of fets having dopants in the channel region to be set much more precisely. A novel dopant profile indicative of a distinctive notch enables tuning of the vt setting within a precise range.
09/25/14
20140284573
 Charge injection and transport layers patent thumbnailCharge injection and transport layers
Compositions for use in hole transporting layers (htls) or hole injection layers (hils) are provided, as well as methods of making the compositions and devices fabricated from the compositions. Oled devices can be made.
09/25/14
20140284376
 Pb-free solder bumps with improved mechanical properties patent thumbnailPb-free solder bumps with improved mechanical properties
A method of forming an electronic device, comprising providing a semiconductor substrate having a first contact and an undoped electroplated lead-free solder bump formed on the first contact. The method also comprises providing a device package substrate having a second contact and a doped lead-free solder layer on the second contact comprising a fourth row transition metal dopant.
09/18/14
20140272473
 Damping controlled composite magnetic media for heat assisted magnetic recording patent thumbnailDamping controlled composite magnetic media for heat assisted magnetic recording
A magnetic stack includes a substrate and a magnetic recording layer disposed over the substrate. The magnetic recording layer comprises magnetic crystalline grains and a segregant disposed between grain boundaries of the crystalline grains.
09/11/14
20140254620
 High-concentration active doping in semiconductors and semiconductor devices produced by such doping patent thumbnailHigh-concentration active doping in semiconductors and semiconductor devices produced by such doping
In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer.
08/14/14
20140228591
 Substituted amino alcohols as chiral dopants patent thumbnailSubstituted amino alcohols as chiral dopants
The invention relates to the use of a substituted, chiral amino alcohol, comprising one or more structural units of the following formula (1), wherein the abbreviations a, y, r1 and r3 to r5 have the following meanings: is a covalent bond or a hydrocarbon group, y is a covalent bond or a hydrocarbon group that can have an oxygen atom at one of its ends through which it is bonded to r1, r1 is an aliphatic or heterocyclic or aromatic radical, the carbon chain of which may be interrupted by one or more b groups, r5 is selected from the group consisting of (a) aliphatic radicals, wherein individual carbon atoms may be replaced by oxygen atoms or carbonyl groups, and wherein the carbon chains of same radicals may be optionally interrupted by a b group, and (b) araliphatic, cycloaliphatic, aromatic and heterocyclic radicals, wherein the carbon chain can be interrupted by one or more b structural elements and/or by one or more d coupling groups, r3, r4 are hydrogen or aliphatic or araliphatic substituents, which are independent of one another, wherein the carbon chain can be interrupted by one or more b groups, b is selected from polymerizable or crosslinkable structural elements from the group comprising c1-c16-alkenyl, c1-c16-alkenyloxy, —c═c—, —ch═ch—coo—, —ch═ch—, —cx═ch—coo— with x═c1-c16-alkyl, and the trans-form of —ooc—ch═ch—coo—, and d is selected from —o—, —nh—, —n(ch3)—, —n(c2h5)—, —so2—, —co—, —coo—, —ch═ch—, —ocoo—, —och2—, ch═n, —cf2cf2—, as a chiral dopant in liquid crystal (mixtures), e.g., in electro-optical systems.. .
07/03/14
20140183631
 Low cost transistors patent thumbnailLow cost transistors
An integrated circuit containing an analog mos transistor has an implant mask for a well which blocks well dopants from two diluted regions at edges of the gate, but exposes a channel region to the well dopants. A thermal drive step diffuses the implanted well dopants across the two diluted regions to form a continuous well with lower doping densities in the two diluted regions.
07/03/14
20140182673
 Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells patent thumbnailInsitu epitaxial deposition of front and back junctions in single crystal silicon solar cells
Fabrication of a single crystal silicon solar cell with an insitu epitaxially deposited very highly doped p-type silicon back surface field obviates the need for the conventional aluminum screen printing step, thus enabling a thinner silicon solar cell because of no aluminum induced bow in the cell. Furthermore, fabrication of a single crystal silicon solar cell with insitu epitaxial p-n junction formation and very highly doped n-type silicon front surface field completely avoids the conventional dopant diffusion step and one screen printing step, thus enabling a cheaper manufacturing process..
06/26/14
20140175593
 Super junction semiconductor device patent thumbnailSuper junction semiconductor device
A super junction semiconductor device includes a substrate layer of a first conductivity type and an epitaxial layer adjoining the substrate layer and including first columns of the first conductivity type and second columns of a second conductivity type. The first and second columns extend along a main crystal direction into the epitaxial layer and have vertical dopant profiles perpendicular to the first surface.
06/26/14
20140175355
 Carbon doped resistive switching layers patent thumbnailCarbon doped resistive switching layers
Provided are carbon doped resistive switching layers, resistive random access memory (reram) cells including these layers, as well as methods of forming thereof. Carbon doping of metal containing materials creates defects in these materials that allow forming and breaking conductive paths as evidenced by resistive switching.
06/05/14
20140151234
Method for manufacturing of an object having phosphorescent properties
The invention concerns a method for manufacturing of an object having phosphorescent properties, comprising the steps of providing an object having a surface made from aluminium or from an aluminium-based alloy and forming a layer of porous aluminium (hydr)oxide at said surface. The invention is characterized in that the method comprises the step of contacting the layer of porous aluminium (hydr)oxide with one or several solutions containing metal dopant ions such as to allow the metal dopant ions to bind to the layer of porous aluminium (hydr)oxide, wherein at least one of said solutions contains ions of at least one element selected from a first group consisting of calcium (ca), magnesium (mg), strontium (sr) and barium (ba), and wherein at least one of said solutions contains ions of europium (eu).
06/05/14
20140151117
Electrical contact conductivity via surface doping
An electrical connector for connecting electrical power transmission lines is provided. The electrical connector is capable of conducting 1×106 to 2.5×106 siemens per meter squared (s/m2), and includes a base metal having a surface layer doped with a conductive material dopant.
05/15/14
20140131829
Isolation structures and methods of forming the same
A method of forming of a semiconductor structure has isolation structures. A substrate having a first region and a second region is provided.
05/08/14
20140128360
Novel modulators of cortical dopaminergic- and nmda-receptor-mediated glutamatergic neurotransmission
The present invention relates to novel substituted phenoxyethylamine derivatives, useful as modulators of cortical and basal ganglia dopaminergic and n-methyl-d-aspartate (nmda) receptor-mediated glutamatergic neurotransmission. In other aspects the invention relates to the use of these compounds in a method for therapy and to pharmaceutical compositions comprising the compounds of the invention..
05/01/14
20140117284
2,2'-binaphthalene ester chiral dopants for cholesteric liquid crystal displays
R9 and r10 are independently alkyl, alkoxy, aryl, naphthyl, styryl, alkenyl, cycloalkyl, alkoxyaryl, cycloalkoxy, or heterocyclic all either substituted or unsubstituted, or combine to form a carbocyclic or heterocyclic ring. Also featured are liquid crystal compositions comprising a chiral dopant compound represented by any of structure 2-4..
05/01/14
20140117269
Liquid-crystalline mixtures
The present invention further relates to the use of the inventive liquid-crystalline mixtures which comprise at least one chiral dopant for production of thermal insulation layers, and to such thermal insulation layers.. .
04/24/14
20140113417
Cross-coupling of gate conductor line and active region in semiconductor devices
Cross-coupling between a gate conductor and an active region of a semiconductor substrate is provided by forming a gate dielectric layer on the semiconductor substrate and lithographically patterning the gate dielectric layer to form opening therein over a portion of the active region at which electrical contact with the gate conductor is desired. After implanting electrical dopants, a gate conductor layer is deposited and patterned.
04/17/14
20140106186
Lipon coatings for high voltage and high temperature li-ion battery cathodes
A lithium ion battery includes an anode and a cathode. The cathode includes a lithium, manganese, nickel, and oxygen containing compound.
04/17/14
20140103410
Partial buried channel transfer device in image sensors
An image sensor pixel includes a photosensitive element, a floating diffusion (“fd”) region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light.
04/10/14
20140097752
Inductively coupled plasma ion source chamber with dopant material shield
A plasma ion source including a plasma chamber, gas inlets, an rf antenna, an rf window, an extraction plate, a window shield, and a chamber liner. The rf window may be positioned intermediate the rf antenna and the plasma chamber.
03/20/14
20140078819
Static random access memory cell with single-sided buffer and asymmetric construction
Balanced electrical performance in a static random access memory (sram) cell with an asymmetric context such as a buffer circuit. Each memory cell includes a circuit feature, such as a read buffer, that has larger transistor sizes and features than the other transistors within the cell, and in which the feature asymmetrical influences the smaller cell transistors.
03/13/14
20140071517
Broadband optical upconversion by energy transfer from dye antenna to upconverting crystal
An optical upconverting nanomaterial includes a nanocrystal, a ligand layer directly bonded to the nanocrystal, and an optical antenna directly or indirectly bonded to the nanocrystal. The nanocrystal includes a transition metal-doped material exhibiting upconversion to optical wavelengths.
03/06/14
20140063435
Liquid crystal display device
A liquid crystal display device includes a first substrate, a second substrate, a liquid crystal layer disposed between the first substrate and the second substrate, and an electrode group provided on at least one of the first substrate and the second substrate, and that applies an electric field to the liquid crystal layer, wherein the liquid crystal layer contains at least one liquid crystalline compound, and at least one chiral dopant, wherein one of the liquid crystalline compounds contained in the liquid crystal layer develops a blue phase liquid crystal, and wherein the liquid crystal layer has a storage elastic modulus g′ of 4,000 pa or more at 25° c. And 1 hz frequency..
02/27/14
20140054678
N-type field effect transistors, arrays comprising n-type vertically-oriented transistors, methods of forming an n-type field effect transistor, and methods of forming an array comprising vertically-oriented n-type transistors
An n-type field effect transistor includes silicon-comprising semiconductor material comprising a pair of source/drain regions having a channel region there-between. At least one of the source/drain regions is conductively doped n-type with at least one of as and p.
02/27/14
20140054677
Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistors
An array includes vertically-oriented transistors, rows of access lines, and columns of data/sense lines. Individual of the rows include an access line interconnecting transistors in that row.
02/27/14
20140054498
2,2'-binaphthalene ester chiral dopants for cholesteric liquid crystal displays
Also featured are liquid crystal compositions comprising a chiral dopant compound represented by any of structure 2-4 as described in the disclosure.. .
02/20/14
20140051685
Therapeutic treatment for metabolic syndrome, type 2 diabetes, obesity or prediabetes
The present invention is directed to a method for treating a patient suffering from a metabolic disorder such as the metabolic syndrome, type 2 diabetes, obesity, or prediabetes, and the metabolic sequale of these diseases including cardiovascular, cerebrovascular, renal and hepatic diseases, comprising the step of: administering to a patient suffering from the metabolic syndrome, type 2 diabetes, obesity, or prediabetes a pharmaceutical composition comprising (1) at least one compound that stimulates an increase in central dopaminergic neuronal activity level in the subject, and (2) at least one compound that stimulates a decrease in central noradrenergic neuronal activity level in the subject.. .
02/20/14
20140048880
Ldmos with accumulation enhancement implant
A lateral double-diffused metal-oxide-semiconductor (ldmos) transistor device includes an enhancement implant region formed in a portion of an accumulation region proximate a p-n junction between body and drift drain regions. The enhancement implant region contains additional dopants of the same conductivity type as the drift drain region.
01/30/14
20140028943
Liquid crystal display device
A liquid crystal display device includes a thin film transistor substrate, a counter substrate, a liquid crystal layer sandwiched between the thin film transistor substrate and the counter substrate. The thin film transistor substrate includes a first electrode and a second electrode for applying an electric field in a substrate in-plane direction, the first electrode includes a plurality of strip portions which extend in a predetermined direction.
01/23/14
20140021590
Method of manufacturing semiconductor devices using ion implantation
A manufacturing method provides a semiconductor device with a substrate layer and an epitaxial layer adjoining the substrate layer. The epitaxial layer includes first columns and second columns of different conductivity types.
01/16/14
20140016173
Electrochromic nickel oxide simultaneously doped with lithium and a metal dopant
An electrochromic device comprising a counter electrode layer comprised of lithium metal oxide which provides a high transmission in the fully intercalated state and which is capable of long-term stability, is disclosed. Methods of making an electrochromic device comprising such a counter electrode are also disclosed..
01/02/14
20140004648
Transparent conductive electrode for three dimensional photovoltaic device
A method for forming a photovoltaic device includes forming a plurality of three-dimensional structures in a substrate to form a textured profile. A first transparent electrode layer is formed on the structures from a transparent conductive oxide having a metal dopant and deposited at a thickness configured to maintain the textured profile.
01/02/14
20140001571
Semiconductor structure with multiple transistors having various threshold voltages and method of fabrication thereof
A semiconductor structure includes first, second, and third transistor elements each having a first screening region concurrently formed therein. A second screening region is formed in the second and third transistor elements such that there is at least one characteristic of the screening region in the second transistor element that is different than the second screening region in the third transistor element.
12/26/13
20130345122
Compositions and methods for modulating dopamine neurotransmission
The present invention provides for diagnosis or treatment of neurological or neuropsychiatric disorders involving abnormal dopamine neurotransmission. Methods and agents are provided for modulating dopamine transporter activity and modulating dopaminergic neurotransmission.
12/19/13
20130334604
Soi semiconductor device comprising a substrate diode and a film diode formed by using a common well implantation mask
When forming sophisticated soi devices, a substrate diode and a film diode are formed by using one and the same implantation mask for determining the well dopant concentration in the corresponding well regions. Consequently, during the further processing, the well dopant concentration of any transistor elements may be achieved independently from the well regions of the diode in the semiconductor layer..
12/12/13
20130327959
Methods and systems for producing surface-conductive light-responsive nanoparticle-polymer composites
Methods are disclosed for fabricating a metallic nanoparticle-polymer composite film having a metallic nanoparticle interlayer of uniform depth. The uncured polymer resin may be mixed with a metal dopant and cast as a film.
12/05/13
20130320409
Source and drain architecture in an active region of a p-channel transistor by tilted implantation
In sophisticated p-channel transistors, which may frequently suffer from a pronounced surface topography of the active regions with respect to the surrounding isolation regions, superior performance may be achieved by using a tilted implantation upon forming the deep drain and source regions, preferably with the tilt angle of 20 degrees or less, thereby substantially avoiding undue lateral dopant penetration into sensitive channel areas.. .
12/05/13
20130320408
Semiconductor structure and fabricating method thereof
A semiconductor device comprises a substrate, a metal-semiconductor compound layer and at least one kind of metal dopant. The substrate has a surface.
11/28/13
20130314649
Liquid crystal lens and display device
A display device includes a first polarizer for transmitting first light that is parallel to a first axis and pertains to a two-dimensional image. The display device further includes a first electrode layer, a second electrode layer, and a liquid crystal layer disposed between the first electrode and the second electrode.
11/28/13
20130313586
Polarization doping in nitride based diodes
A light emitting device comprising a three-dimensional polarization-graded (3dpg) structure that improves lateral current spreading within the device without introducing additional dopant impurities in the epitaxial structures. The 3dpg structure can include a repeatable stack unit that may be repeated several times within the 3dpg.
11/28/13
20130313575
Semi-insulating silicon carbide monocrystal and method of growing the same
A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects.
11/21/13
20130307018
Semiconductor device including first and second semiconductor materials
A semiconductor device includes a first semiconductor region including a first semiconductor material. The semiconductor device further includes a second semiconductor region adjoining the first semiconductor region.
11/07/13
20130295203
Methods and compositions for the treatment of neuropsychiatric disorders
Methods and compositions are disclosed to treat neuropsychiatric disorders based upon a new framework of diagnosis. Axis i biomarkers include genes related to prefrontal dopamine synthesis and/or dopamine degradation.
10/31/13
20130288469
Methods and apparatus for implanting a dopant material
Methods and apparatus for implanting a dopant material are provided herein. In some embodiments, a method of processing a substrate disposed within a process chamber may include (a) implanting a dopant material into a surface of the substrate to form a doped layer in the substrate and an elemental dopant layer atop the doped layer; (b) removing at least some of the elemental dopant layer from atop the surface of the substrate; and (c) implanting the dopant material into the doped layer of the substrate; wherein (a)-(c) are performed without removing the substrate from the process chamber; and wherein (a)-(c) are repeated until at least one of a desired dopant implantation depth or a desired dopant implantation density is achieved..
10/10/13
20130266861
Metal-doped transition metal hexacyanoferrate (tmhcf) battery electrode
A method is provided for synthesizing a metal-doped transition metal hexacyanoferrate (tmhcf) battery electrode. The method prepares a first solution of axfe(cn)6 and fe(cn)6, where a cations may be alkali or alkaline-earth cations.
10/03/13
20130258264
Liquid crystal display device
A liquid crystal display device is disclosed, which includes a first substrate, a second substrate and a liquid crystal layer containing chiral dopants. The second substrate includes a blue sub-pixel region and a blue sub-pixel electrode unit disposed in the blue sub-pixel region.
10/03/13
20130258262
Liquid crystal display
A liquid crystal display includes a first substrate, a pixel electrode disposed on the first substrate, a first alignment layer disposed on the first substrate and the pixel electrode, a second substrate disposed opposite to the first substrate; a common electrode disposed on the second substrate, a second alignment layer disposed on the second substrate and the common electrode, and a liquid crystal layer disposed between the first substrate and the second substrate, in which the liquid crystal layer includes a plurality of liquid crystal molecules and a chiral dopant, and the first alignment layer and the second alignment layer include polymers formed by photo-polymerization of reactive mesogen.. .
10/03/13
20130256795
Ldmos with accumulation enhancement implant
A lateral double-diffused metal-oxide-semiconductor (ldmos) transistor device includes an enhancement implant region formed in a portion of an accumulation region proximate a p-n junction between body and drift drain regions. The enhancement implant region contains additional dopants of the same conductivity type as the drift drain region.
09/26/13
20130252395
Resistive random access memory and method of manufacturing the same
Example embodiments relate to a resistive random access memory (rram) and a method of manufacturing the rram. A rram according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate).
09/26/13
20130250216
Liquid crystal display device
A liquid crystal (lc) display device includes a first substrate having a pixel unit and a second substrate. The pixel unit has a pixel electrode unit including a primary electrode region.
09/05/13
20130229607
Liquid crystal display and method of manufacturing the same
A liquid crystal display includes a first substrate and a second substrate facing each other, a plurality of first electrodes on the first substrate, a first vertical alignment layer on the first electrodes, a second electrode on the second substrate, a second vertical alignment layer on the second electrode, and a liquid crystal layer between the first substrate and the second substrate, wherein the liquid crystal layer includes liquid crystal molecules having negative dielectric anisotropy, a chiral dopant, and an alignment aiding agent.. .
09/05/13
20130228215
Solar cell and method for manufacturing the same
A method of manufacturing a solar cell according to an embodiment includes the steps of: forming an emitter layer by ion-implanting a first conductive type dopant to a first surface of a semiconductor substrate; and forming a back surface field layer by ion-implanting a second conductive type dopant to a second surface of the semiconductor substrate. When an additional dopant is a dopant other than the first and second conductive type dopants, an amount of the additional dopant doped during the forming the back surface field layer is larger than an amount of the additional dopant doped during the forming the emitter layer..
08/29/13
20130223467
Spherical liquid-crystal laser
The patent refers to one or more droplets of chiral liquid crystals used as point source(s) of laser light. The source is shaped as a droplet of chiral liquid crystals (1) and an active medium preferably dispersed in the liquid crystals.
08/29/13
20130221429
Method and apparatus related to a junction field-effect transistor
In a general aspect, a semiconductor device can include a gate having a first trench portion disposed within a first trench of a junction field-effect transistor device, a second trench portion disposed within a second trench of the junction field-effect transistor device, and a top portion coupled to both the first trench portion and to the second trench portion. The semiconductor device can include a mesa region disposed between the first trench and the second trench, and including a single pn junction defined by an interface between a substrate dopant region having a first dopant type and a channel dopant region having a second dopant type..
08/22/13
20130214257
Charge injection and transport layers
Compositions for use in hole transporting layers (htls) or hole injection layers (hils) are provided, as well as methods of making the compositions and devices fabricated from the compositions. Oled devices can be made.
08/08/13
20130203855
Pharmaceutical dopamine glycoconjugate compositions and methods of their preparation and use
Hydrophilic transportable n-linked glycosyl dopaminergic prodrug compounds and methods of their use.. .
08/01/13
20130195745
Surface functionalized colloidally stable spheroidal nano-apatites exhibiting intrinsic multi-functionality
Calcium-phosphate based nanoparticles (capnp) are synthesized which are simultaneously intrinsically magnetic and fluorescent, and extrinsically surface modified to serve an attachment function. Doping calcium phosphates during colloidal synthesis results in 10 nm particles that are stable in aqueous media and at physiological ph.
08/01/13
20130193376
Liquid crystal system and liquid crystal display
The instant invention relates to mesogenic systems comprising a) a polymeric component, component a, obtained or obtainable from polymerisation of a precursor comprising one or more mesogenic mono-reactive compounds, one or more di-reactive compounds, which optionally are also mesogenic compounds and optionally a photo-initiator and a low molecular weight component, component b, comprising one or more mono-reactive, mesogenic compounds, one or more mesogenic compounds and one or more chiral dopants, exhibiting a blue phase, as well as to the use of these systems in deices and to these devices.. .
07/18/13
20130182490
Static random access memory cell with single-sided buffer and asymmetric construction
Balanced electrical performance in a static random access memory (sram) cell with an asymmetric context such as a buffer circuit. Each memory cell includes a circuit feature, such as a read buffer, that has larger transistor sizes and features than the other transistors within the cell, and in which the feature asymmetrical influences the smaller cell transistors.
07/18/13
20130182307
Electrochromic nickel oxide simultaneously doped with lithium and a metal dopant
An electrochromic device comprising a counter electrode layer comprised of lithium metal oxide which provides a high transmission in the fully intercalated state and which is capable of long-term stability, is disclosed. Methods of making an electrochromic device comprising such a counter electrode are also disclosed..
06/06/13
20130142866
Compositions and methods for improved organ transplant preservation and acceptance
The invention provides a novel aqueous composition for the storage and preservation of transplants, such as organ or tissue allografts. The composition comprises the compound n-octanoyl dopamine in solubilised form.
06/06/13
20130141676
Liquid crystal display device
A liquid crystal display device is provided. The liquid crystal display device includes a first substrate having a pixel unit with a pixel electrode.
06/06/13
20130141675
Liquid crystal display device
A liquid crystal display device is provided. The liquid crystal display device includes a first substrate having a pixel unit, wherein the pixel unit has a pixel electrode.
05/30/13
20130134359
Ultra high temperature shift catalyst with low methanation
A catalytic water gas shift process at temperatures above about 450° c. Up to about 900° c.
05/23/13
20130126970
Configuration and fabrication of semiconductor structure using empty and filled wells
A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors (“igfets”), to achieve desired electronic characteristics. A relatively small amount of semiconductor well dopant is near the top of an empty well.
05/09/13
20130115308
Doped material
A doped material comprises tio2 and three non-metal dopants. The first non-metal dopant comprises sulfur, the second non-metal dopant comprises fluorine, and the third non-metal dopant comprises carbon.
04/18/13
20130092994
Three-dimensional semiconductor memory device
A semiconductor memory device is provided including first and second cell strings formed on a substrate, the first and second cell strings jointly connected to a bit line, wherein each of the first and second cell strings includes a ground selection unit, a memory cell, and first and second string selection units sequentially formed on the substrate to be connected to each other, wherein the ground selection unit is connected to a ground selection line, the memory cell is connected to a word line, the first string selection unit is connected to a first string selection line, and the second string selection unit is connected to a second string selection line, and wherein the second string selection unit of the first cell string has a channel dopant region.. .
04/18/13
20130092982
Partial buried channel transfer device for image sensors
Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light.


Popular terms: [SEARCH]

L Dopa topics: Liquid Crystal, Liquid Crystal Display, Semiconductor, Alignment Layer, Implantation, Interstitial, Enhancement, Random Access, Semiconductor Substrate, Vertical Alignment, Anisotropy, Semiconductor Device, Antiferroelectric, Transport Layer, Led Device

Follow us on Twitter
twitter icon@FreshPatents

###

This listing is a sample listing of patent applications related to L Dopa for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for L Dopa with additional patents listed. Browse our RSS directory or Search for other possible listings.
     SHARE
  
         


FreshNews promo



1.3201

2979

0 - 1 - 71