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This page is updated frequently with new L Dopa-related patent applications. Subscribe to the L Dopa RSS feed to automatically get the update: related L RSS feeds. RSS updates for this page: L Dopa RSS RSS


N-type field effect transistors, arrays comprising n-type vertically-oriented transistors, methods of forming an n-type…

Micron Technology

N-type field effect transistors, arrays comprising n-type vertically-oriented transistors, methods of forming an n-type…

Structure and method for alignment marks

Taiwan Semiconductor Manufacturing

Structure and method for alignment marks

Structure and method for alignment marks

Ideal Power

Systems and methods for bidirectional device fabrication


Date/App# patent app List of recent L Dopa-related patents
08/20/15
20150236155 
 Semiconductor device and formation thereof patent thumbnailSemiconductor device and formation thereof
A semiconductor device and method of forming the same are described. A semiconductor device includes an active area adjacent a gate structure.
Taiwan Semiconductor Manufacturing Company Limited


07/30/15
20150214363 
 N-type field effect transistors, arrays comprising n-type vertically-oriented transistors, methods of forming an n-type field effect transistor, and methods of forming an array comprising vertically-oriented n-type transistors patent thumbnailN-type field effect transistors, arrays comprising n-type vertically-oriented transistors, methods of forming an n-type field effect transistor, and methods of forming an array comprising vertically-oriented n-type transistors
An n-type field effect transistor includes silicon-comprising semiconductor material comprising a pair of source/drain regions having a channel region there-between. At least one of the source/drain regions is conductively doped n-type with at least one of as and p.
Micron Technology, Inc.


07/30/15
20150214225 
 Structure and  alignment marks patent thumbnailStructure and alignment marks
The alignment mark and method for making the same are described. In one embodiment, a semiconductor structure includes a plurality of gate stacks formed on the semiconductor substrate and configured as an alignment mark; doped features formed in the semiconductor substrate and disposed on sides of each of the plurality of gate stacks; and channel regions underlying the plurality of gate stacks and free of channel dopant..
Taiwan Semiconductor Manufacturing Company, Ltd.


07/30/15
20150214055 
 Systems and methods for bidirectional device fabrication patent thumbnailSystems and methods for bidirectional device fabrication
Methods and systems for double-sided semiconductor device fabrication. Devices having multiple leads on each surface can be fabricated using a high-temperature-resistant handle wafer and a medium-temperature-resistant handle wafer.
Ideal Power Inc.


07/02/15
20150184068 
 Electroluminescent compositions patent thumbnailElectroluminescent compositions
The present invention relates to compositions capable of emitting circularly polarized electroluminescence comprising an electroluminescent polymer and a chiral dopant, processes for the synthesis of such compositions and light emitting devices incorporating such compositions.. .
Imperial Innovations Limited


06/18/15
20150171465 
 Solid state catholyte or electrolyte for battery using liampbsc (m=si, ge, and/or sn) patent thumbnailSolid state catholyte or electrolyte for battery using liampbsc (m=si, ge, and/or sn)
The present invention provides an energy storage device comprising a cathode region or other element. The device has a major active region comprising a plurality of first active regions spatially disposed within the cathode region.
Quantumscape Corporation


06/18/15
20150170957 
 Isolation structures and methods of forming the same patent thumbnailIsolation structures and methods of forming the same
A method of forming a semiconductor structure includes implanting neutral dopants in a first region of a substrate to form a first etching stop feature, the first etching stop feature having a depth d1. The method further includes implanting neutral dopants in a second region of the substrate to form a second etching stop feature, wherein the second etching stop feature has a depth d2, and d1 is different from d2.
Taiwan Semiconductor Manufacturing Company, Ltd.


06/04/15
20150155277 
 Semiconductor device patent thumbnailSemiconductor device
A semiconductor device includes a transistor region and diode region. A plurality of transistors is in the transistor region and at least one diode is in the diode region.
Kabushiki Kaisha Toshiba


05/28/15
20150148426 
 Novel modulators of cortical dopaminergic- and nmda-receptor-mediated glutamatergic neurotransmission patent thumbnailNovel modulators of cortical dopaminergic- and nmda-receptor-mediated glutamatergic neurotransmission
The present invention relates to novel substituted phenoxyethylamine derivatives, useful as modulators of cortical and basal ganglia dopaminergic and n-methyl-d-aspartate (nmda) receptor-mediated glutamatergic neurotransmission. In other aspects the invention relates to the use of these compounds in a method for therapy and to pharmaceutical compositions comprising the compounds of the invention..
Integrative Research Laboratories Sweden Ab


05/28/15
20150146145 
 Color liquid crystal display panel and manufacturing method thereof patent thumbnailColor liquid crystal display panel and manufacturing method thereof
The present invention provides a color liquid crystal display panel and a manufacturing method thereof. The color liquid crystal display panel includes: a first substrate (2), a second substrate (3), and dye-doped liquid crystal layers (4) hermetically sealed between the first substrate (2) and the second substrate (3).
Shenzhen China Star Optoelectronics Technology Co. Ltd.


05/28/15
20150144844 

Composites incorporating a conductive polymer nanofiber network


Methods of forming composites that incorporate networks of conductive polymer nanofibers are provided. Networks of less-than conductive polymers are first formed and then doped with a chemical dopant to provide networks of conductive polymers.
University Of Washington Through Its Center For Commercialization


04/23/15
20150108505 

Diamond semiconductor system and method


Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond material having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/vs to the diamond lattice at 100 kpa and 300k.

04/16/15
20150103300 

Liquid crystal display


A liquid crystal display includes: a first insulation substrate; a gate line and a data line formed on the first insulation substrate; a first electrode and a second electrode formed on the gate line and the data line and overlapping each other via an insulating layer interposed therebetween; a second insulation substrate facing the first insulation substrate; and a chiral dopant inserted between the first insulation substrate and the second insulation substrate. A content of the chiral dopant may be within about 1%, and liquid crystal molecules of a liquid crystal layer may be twisted with a pitch of about 10 μm to about 100 μm by the chiral dopant..
Samsung Display Co., Ltd.


04/09/15
20150099350 

Enabling high activation of dopants in indium-aluminum-galium-nitride material system using hot implantation and nanosecond annealing


Embodiments of the present disclosure generally relate to doping and annealing substrates. The substrates may be doped during a hot implantation process, and subsequently annealed using a nanosecond annealing process.
Applied Materials, Inc.


04/09/15
20150097233 

Semiconductor device and manufacturing the same


A semiconductor device includes a vertical igfet in a first area of a semiconductor body, the vertical igfet having a drift zone between a body zone and a drain electrode, the drift zone having a vertical dopant profile of a first conductivity type being a superposition of a first dopant profile declining with increasing distance from the drain electrode and dominating the vertical dopant profile in a first zone next to the drain electrode and a second dopant profile being a broadened peak dopant profile and dominating the vertical dopant profile in a second zone next to the body zone.. .
Infineon Technologies Ag


03/12/15
20150069522 

Efficient integration of cmos with poly resistor


Device and methods for forming a device are presented. The method includes providing a substrate.
Globalfoundries Singapore Pte. Ltd.


03/05/15
20150060936 

Process method and structure for high voltage mosfets


This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches formed at a top portion of the semiconductor substrate extending laterally across the semiconductor substrate along a longitudinal direction each having a nonlinear portion comprising a sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface.

02/19/15
20150050494 

Incorporating metals, metal oxides and compounds on the inner and outer surfaces of nanotubes and between the walls of the nanotubes and preparation thereof


A multi-walled titanium-based nanotube array containing metal or non-metal dopants is formed, in which the dopants are in the form of ions, compounds, clusters and particles located on at least one of a surface, inter-wall space and core of the nanotube. The structure can include multiple dopants, in the form of metal or non-metal ions, compounds, clusters or particles.
The Hong Kong University Of Science And Technology


01/22/15
20150024995 

Combination of dopamine agonists plus first phase insulin secretagogues for the treatment of metabolic disorders


The present invention is directed to a method of treating a metabolic disorder or key elements of a metabolic disorder such method comprising the use of an agent(s) that increases central dopaminergic activity plus a first-phase insulin secretagouge.. .
Veroscience Llc


01/15/15
20150015829 

Liquid crystal display device


A liquid crystal display device comprises a first substrate, a second substrate, a liquid crystal layer, a first polarizer, a second polarizer and a first electrode layer. The liquid crystal layer is disposed between the first and the second substrates, and comprises a liquid crystal mixture comprising a chiral dopant.
Innolux Corporation


01/15/15
20150014816 

Doped semiconductor films and processing


A method of forming a semiconductor material incorporating an electrical dopant is disclosed. In one aspect, a method of incorporating dopant in a semiconductor film comprises forming a first semiconductor material incorporating the dopant at a first dopant concentration and preferentially etching a portion of the first semiconductor material, wherein etching leaves a first etched semiconductor material incorporating the dopant at a second dopant concentration higher than the first dopant concentration..
Asm Ip Holding B.v.


01/01/15
20150000978 

Doping of drilling mud with a mineralogical compound


Presented are methods and systems for tracking and assessing drilling fluid flow and performance and, accordingly, detecting drilling mud return depth. The drilling mud is injected with a mineralogical dopant in an amount that does not affect the physical or chemical properties of the drilling mud.
Cgg Services Sa


12/11/14
20140361408 

Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the czochralski method


A method for controlling oxygen precipitation in a single crystal silicon wafer having a wafer resistivity of less than about 10 milliohm-cm is provided so that the wafer has uniformly high oxygen precipitation behavior from the central axis to the circumferential edge. The single crystal silicon wafer comprises an additional dopant selected from among carbon, arsenic, and antimony..

11/20/14
20140342228 

Metal/non-metal co-doped lithium titanate spheres with hierarchical micro/nano architectures for high rate lithium ion batteries


The present invention is to provide a lithium titanate (lto) material for a lithium ion battery. The lto material has hierarchical micro/nano architecture, and comprises a plurality of micron-sized secondary lto spheres, and a plurality of pores incorporated with metal formed by a metal dopant.

11/20/14
20140339593 

Light emitting diode (led) component comprising a phosphor with improved excitation properties


A light emitting diode (led) component comprises an led having a dominant wavelength in a range of from about 425 nm to less than 460 nm and a phosphor in optical communication with the led. The phosphor includes a host lattice comprising yttrium aluminum garnet (yag), and may include an activator comprising ce and a substitutional dopant comprising ga incorporated in the host lattice.

11/13/14
20140332844 

A process method and structure for high voltage mosfets


This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface.

11/06/14
20140329831 

Novel dopamine d3 receptor ligands and preparation and medical uses of the same


The present invention relates to a novel piperazine derivative represented by formula i having an activity for regulating dopamine d3 receptor, stereoisomers thereof, pharmaceutically acceptable salts or solvates, and a pharmaceutical composition comprising the compound, a process for preparing the same, and use thereof in the prevention or treatment of a disease associated with central nervous system dysfunction, such as parkinson's disease, schizophrenia, drug addiction and relapse, as well as kidney protection and immunoregulation, or as a tool for researching d3r function or diseases associated with d3r dysfunction.. .

10/30/14
20140322862 

Method of making a resistive random access memory device with metal-doped resistive switching layer


A method for forming a resistive random access memory (rram) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ald), doping the resistive switching oxide layer with a metal dopant different from metal forming the metal oxide, and forming a second electrode by thermal atomic layer deposition (ald), where the resistive switching layer is interposed between the first electrode and the second electrode.

09/25/14
20140284722 

Transistor with threshold voltage set notch and fabrication thereof


A structure and method of fabrication thereof relate to a deeply depleted channel (ddc) design, allowing cmos based devices to have a reduced σvt compared to conventional bulk cmos and can allow the threshold voltage vt of fets having dopants in the channel region to be set much more precisely. A novel dopant profile indicative of a distinctive notch enables tuning of the vt setting within a precise range.

09/25/14
20140284573 

Charge injection and transport layers


Compositions for use in hole transporting layers (htls) or hole injection layers (hils) are provided, as well as methods of making the compositions and devices fabricated from the compositions. Oled devices can be made.

09/25/14
20140284376 

Pb-free solder bumps with improved mechanical properties


A method of forming an electronic device, comprising providing a semiconductor substrate having a first contact and an undoped electroplated lead-free solder bump formed on the first contact. The method also comprises providing a device package substrate having a second contact and a doped lead-free solder layer on the second contact comprising a fourth row transition metal dopant.

09/18/14
20140272473 

Damping controlled composite magnetic media for heat assisted magnetic recording


A magnetic stack includes a substrate and a magnetic recording layer disposed over the substrate. The magnetic recording layer comprises magnetic crystalline grains and a segregant disposed between grain boundaries of the crystalline grains.

09/11/14
20140254620 

High-concentration active doping in semiconductors and semiconductor devices produced by such doping


In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer.

08/14/14
20140228591 

Substituted amino alcohols as chiral dopants


The invention relates to the use of a substituted, chiral amino alcohol, comprising one or more structural units of the following formula (1), wherein the abbreviations a, y, r1 and r3 to r5 have the following meanings: is a covalent bond or a hydrocarbon group, y is a covalent bond or a hydrocarbon group that can have an oxygen atom at one of its ends through which it is bonded to r1, r1 is an aliphatic or heterocyclic or aromatic radical, the carbon chain of which may be interrupted by one or more b groups, r5 is selected from the group consisting of (a) aliphatic radicals, wherein individual carbon atoms may be replaced by oxygen atoms or carbonyl groups, and wherein the carbon chains of same radicals may be optionally interrupted by a b group, and (b) araliphatic, cycloaliphatic, aromatic and heterocyclic radicals, wherein the carbon chain can be interrupted by one or more b structural elements and/or by one or more d coupling groups, r3, r4 are hydrogen or aliphatic or araliphatic substituents, which are independent of one another, wherein the carbon chain can be interrupted by one or more b groups, b is selected from polymerizable or crosslinkable structural elements from the group comprising c1-c16-alkenyl, c1-c16-alkenyloxy, —c═c—, —ch═ch—coo—, —ch═ch—, —cx═ch—coo— with x═c1-c16-alkyl, and the trans-form of —ooc—ch═ch—coo—, and d is selected from —o—, —nh—, —n(ch3)—, —n(c2h5)—, —so2—, —co—, —coo—, —ch═ch—, —ocoo—, —och2—, ch═n, —cf2cf2—, as a chiral dopant in liquid crystal (mixtures), e.g., in electro-optical systems.. .

07/03/14
20140183631 

Low cost transistors


An integrated circuit containing an analog mos transistor has an implant mask for a well which blocks well dopants from two diluted regions at edges of the gate, but exposes a channel region to the well dopants. A thermal drive step diffuses the implanted well dopants across the two diluted regions to form a continuous well with lower doping densities in the two diluted regions.

07/03/14
20140182673 

Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells


Fabrication of a single crystal silicon solar cell with an insitu epitaxially deposited very highly doped p-type silicon back surface field obviates the need for the conventional aluminum screen printing step, thus enabling a thinner silicon solar cell because of no aluminum induced bow in the cell. Furthermore, fabrication of a single crystal silicon solar cell with insitu epitaxial p-n junction formation and very highly doped n-type silicon front surface field completely avoids the conventional dopant diffusion step and one screen printing step, thus enabling a cheaper manufacturing process..

06/26/14
20140175593 

Super junction semiconductor device


A super junction semiconductor device includes a substrate layer of a first conductivity type and an epitaxial layer adjoining the substrate layer and including first columns of the first conductivity type and second columns of a second conductivity type. The first and second columns extend along a main crystal direction into the epitaxial layer and have vertical dopant profiles perpendicular to the first surface.

06/26/14
20140175355 

Carbon doped resistive switching layers


Provided are carbon doped resistive switching layers, resistive random access memory (reram) cells including these layers, as well as methods of forming thereof. Carbon doping of metal containing materials creates defects in these materials that allow forming and breaking conductive paths as evidenced by resistive switching.

06/05/14
20140151234 

Method for manufacturing of an object having phosphorescent properties


The invention concerns a method for manufacturing of an object having phosphorescent properties, comprising the steps of providing an object having a surface made from aluminium or from an aluminium-based alloy and forming a layer of porous aluminium (hydr)oxide at said surface. The invention is characterized in that the method comprises the step of contacting the layer of porous aluminium (hydr)oxide with one or several solutions containing metal dopant ions such as to allow the metal dopant ions to bind to the layer of porous aluminium (hydr)oxide, wherein at least one of said solutions contains ions of at least one element selected from a first group consisting of calcium (ca), magnesium (mg), strontium (sr) and barium (ba), and wherein at least one of said solutions contains ions of europium (eu).

06/05/14
20140151117 

Electrical contact conductivity via surface doping


An electrical connector for connecting electrical power transmission lines is provided. The electrical connector is capable of conducting 1×106 to 2.5×106 siemens per meter squared (s/m2), and includes a base metal having a surface layer doped with a conductive material dopant.

05/15/14
20140131829 

Isolation structures and methods of forming the same


A method of forming of a semiconductor structure has isolation structures. A substrate having a first region and a second region is provided.

05/08/14
20140128360 

Novel modulators of cortical dopaminergic- and nmda-receptor-mediated glutamatergic neurotransmission


The present invention relates to novel substituted phenoxyethylamine derivatives, useful as modulators of cortical and basal ganglia dopaminergic and n-methyl-d-aspartate (nmda) receptor-mediated glutamatergic neurotransmission. In other aspects the invention relates to the use of these compounds in a method for therapy and to pharmaceutical compositions comprising the compounds of the invention..

05/01/14
20140117284 

2,2'-binaphthalene ester chiral dopants for cholesteric liquid crystal displays


R9 and r10 are independently alkyl, alkoxy, aryl, naphthyl, styryl, alkenyl, cycloalkyl, alkoxyaryl, cycloalkoxy, or heterocyclic all either substituted or unsubstituted, or combine to form a carbocyclic or heterocyclic ring. Also featured are liquid crystal compositions comprising a chiral dopant compound represented by any of structure 2-4..

05/01/14
20140117269 

Liquid-crystalline mixtures


The present invention further relates to the use of the inventive liquid-crystalline mixtures which comprise at least one chiral dopant for production of thermal insulation layers, and to such thermal insulation layers.. .

04/24/14
20140113417 

Cross-coupling of gate conductor line and active region in semiconductor devices


Cross-coupling between a gate conductor and an active region of a semiconductor substrate is provided by forming a gate dielectric layer on the semiconductor substrate and lithographically patterning the gate dielectric layer to form opening therein over a portion of the active region at which electrical contact with the gate conductor is desired. After implanting electrical dopants, a gate conductor layer is deposited and patterned.

04/17/14
20140106186 

Lipon coatings for high voltage and high temperature li-ion battery cathodes


A lithium ion battery includes an anode and a cathode. The cathode includes a lithium, manganese, nickel, and oxygen containing compound.

04/17/14
20140103410 

Partial buried channel transfer device in image sensors


An image sensor pixel includes a photosensitive element, a floating diffusion (“fd”) region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light.

04/10/14
20140097752 

Inductively coupled plasma ion source chamber with dopant material shield


A plasma ion source including a plasma chamber, gas inlets, an rf antenna, an rf window, an extraction plate, a window shield, and a chamber liner. The rf window may be positioned intermediate the rf antenna and the plasma chamber.

03/20/14
20140078819 

Static random access memory cell with single-sided buffer and asymmetric construction


Balanced electrical performance in a static random access memory (sram) cell with an asymmetric context such as a buffer circuit. Each memory cell includes a circuit feature, such as a read buffer, that has larger transistor sizes and features than the other transistors within the cell, and in which the feature asymmetrical influences the smaller cell transistors.

03/13/14
20140071517 

Broadband optical upconversion by energy transfer from dye antenna to upconverting crystal


An optical upconverting nanomaterial includes a nanocrystal, a ligand layer directly bonded to the nanocrystal, and an optical antenna directly or indirectly bonded to the nanocrystal. The nanocrystal includes a transition metal-doped material exhibiting upconversion to optical wavelengths.

03/06/14
20140063435 

Liquid crystal display device


A liquid crystal display device includes a first substrate, a second substrate, a liquid crystal layer disposed between the first substrate and the second substrate, and an electrode group provided on at least one of the first substrate and the second substrate, and that applies an electric field to the liquid crystal layer, wherein the liquid crystal layer contains at least one liquid crystalline compound, and at least one chiral dopant, wherein one of the liquid crystalline compounds contained in the liquid crystal layer develops a blue phase liquid crystal, and wherein the liquid crystal layer has a storage elastic modulus g′ of 4,000 pa or more at 25° c. And 1 hz frequency..

02/27/14
20140054678 

N-type field effect transistors, arrays comprising n-type vertically-oriented transistors, methods of forming an n-type field effect transistor, and methods of forming an array comprising vertically-oriented n-type transistors


An n-type field effect transistor includes silicon-comprising semiconductor material comprising a pair of source/drain regions having a channel region there-between. At least one of the source/drain regions is conductively doped n-type with at least one of as and p.

02/27/14
20140054677 

Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistors


An array includes vertically-oriented transistors, rows of access lines, and columns of data/sense lines. Individual of the rows include an access line interconnecting transistors in that row.

02/27/14
20140054498 

2,2'-binaphthalene ester chiral dopants for cholesteric liquid crystal displays


Also featured are liquid crystal compositions comprising a chiral dopant compound represented by any of structure 2-4 as described in the disclosure.. .

02/20/14
20140051685 

Therapeutic treatment for metabolic syndrome, type 2 diabetes, obesity or prediabetes


The present invention is directed to a method for treating a patient suffering from a metabolic disorder such as the metabolic syndrome, type 2 diabetes, obesity, or prediabetes, and the metabolic sequale of these diseases including cardiovascular, cerebrovascular, renal and hepatic diseases, comprising the step of: administering to a patient suffering from the metabolic syndrome, type 2 diabetes, obesity, or prediabetes a pharmaceutical composition comprising (1) at least one compound that stimulates an increase in central dopaminergic neuronal activity level in the subject, and (2) at least one compound that stimulates a decrease in central noradrenergic neuronal activity level in the subject.. .

02/20/14
20140048880 

Ldmos with accumulation enhancement implant


A lateral double-diffused metal-oxide-semiconductor (ldmos) transistor device includes an enhancement implant region formed in a portion of an accumulation region proximate a p-n junction between body and drift drain regions. The enhancement implant region contains additional dopants of the same conductivity type as the drift drain region.

01/30/14
20140028943 

Liquid crystal display device


A liquid crystal display device includes a thin film transistor substrate, a counter substrate, a liquid crystal layer sandwiched between the thin film transistor substrate and the counter substrate. The thin film transistor substrate includes a first electrode and a second electrode for applying an electric field in a substrate in-plane direction, the first electrode includes a plurality of strip portions which extend in a predetermined direction.

01/23/14
20140021590 

Method of manufacturing semiconductor devices using ion implantation


A manufacturing method provides a semiconductor device with a substrate layer and an epitaxial layer adjoining the substrate layer. The epitaxial layer includes first columns and second columns of different conductivity types.

01/16/14
20140016173 

Electrochromic nickel oxide simultaneously doped with lithium and a metal dopant


An electrochromic device comprising a counter electrode layer comprised of lithium metal oxide which provides a high transmission in the fully intercalated state and which is capable of long-term stability, is disclosed. Methods of making an electrochromic device comprising such a counter electrode are also disclosed..

01/02/14
20140004648 

Transparent conductive electrode for three dimensional photovoltaic device


A method for forming a photovoltaic device includes forming a plurality of three-dimensional structures in a substrate to form a textured profile. A first transparent electrode layer is formed on the structures from a transparent conductive oxide having a metal dopant and deposited at a thickness configured to maintain the textured profile.

01/02/14
20140001571 

Semiconductor structure with multiple transistors having various threshold voltages and fabrication thereof


A semiconductor structure includes first, second, and third transistor elements each having a first screening region concurrently formed therein. A second screening region is formed in the second and third transistor elements such that there is at least one characteristic of the screening region in the second transistor element that is different than the second screening region in the third transistor element.

12/26/13
20130345122 

Compositions and methods for modulating dopamine neurotransmission


The present invention provides for diagnosis or treatment of neurological or neuropsychiatric disorders involving abnormal dopamine neurotransmission. Methods and agents are provided for modulating dopamine transporter activity and modulating dopaminergic neurotransmission.

12/19/13
20130334604 

Soi semiconductor device comprising a substrate diode and a film diode formed by using a common well implantation mask


When forming sophisticated soi devices, a substrate diode and a film diode are formed by using one and the same implantation mask for determining the well dopant concentration in the corresponding well regions. Consequently, during the further processing, the well dopant concentration of any transistor elements may be achieved independently from the well regions of the diode in the semiconductor layer..

12/12/13
20130327959 

Methods and systems for producing surface-conductive light-responsive nanoparticle-polymer composites


Methods are disclosed for fabricating a metallic nanoparticle-polymer composite film having a metallic nanoparticle interlayer of uniform depth. The uncured polymer resin may be mixed with a metal dopant and cast as a film.

12/05/13
20130320409 

Source and drain architecture in an active region of a p-channel transistor by tilted implantation


In sophisticated p-channel transistors, which may frequently suffer from a pronounced surface topography of the active regions with respect to the surrounding isolation regions, superior performance may be achieved by using a tilted implantation upon forming the deep drain and source regions, preferably with the tilt angle of 20 degrees or less, thereby substantially avoiding undue lateral dopant penetration into sensitive channel areas.. .

12/05/13
20130320408 

Semiconductor structure and fabricating method thereof


A semiconductor device comprises a substrate, a metal-semiconductor compound layer and at least one kind of metal dopant. The substrate has a surface.

11/28/13
20130314649 

Liquid crystal lens and display device


A display device includes a first polarizer for transmitting first light that is parallel to a first axis and pertains to a two-dimensional image. The display device further includes a first electrode layer, a second electrode layer, and a liquid crystal layer disposed between the first electrode and the second electrode.

11/28/13
20130313586 

Polarization doping in nitride based diodes


A light emitting device comprising a three-dimensional polarization-graded (3dpg) structure that improves lateral current spreading within the device without introducing additional dopant impurities in the epitaxial structures. The 3dpg structure can include a repeatable stack unit that may be repeated several times within the 3dpg.

11/28/13
20130313575 

Semi-insulating silicon carbide monocrystal and growing the same


A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects.

11/21/13
20130307018 

Semiconductor device including first and second semiconductor materials


A semiconductor device includes a first semiconductor region including a first semiconductor material. The semiconductor device further includes a second semiconductor region adjoining the first semiconductor region.

11/07/13
20130295203 

Methods and compositions for the treatment of neuropsychiatric disorders


Methods and compositions are disclosed to treat neuropsychiatric disorders based upon a new framework of diagnosis. Axis i biomarkers include genes related to prefrontal dopamine synthesis and/or dopamine degradation.

10/31/13
20130288469 

Methods and implanting a dopant material


Methods and apparatus for implanting a dopant material are provided herein. In some embodiments, a method of processing a substrate disposed within a process chamber may include (a) implanting a dopant material into a surface of the substrate to form a doped layer in the substrate and an elemental dopant layer atop the doped layer; (b) removing at least some of the elemental dopant layer from atop the surface of the substrate; and (c) implanting the dopant material into the doped layer of the substrate; wherein (a)-(c) are performed without removing the substrate from the process chamber; and wherein (a)-(c) are repeated until at least one of a desired dopant implantation depth or a desired dopant implantation density is achieved..

10/10/13
20130266861 

Metal-doped transition metal hexacyanoferrate (tmhcf) battery electrode


A method is provided for synthesizing a metal-doped transition metal hexacyanoferrate (tmhcf) battery electrode. The method prepares a first solution of axfe(cn)6 and fe(cn)6, where a cations may be alkali or alkaline-earth cations.

10/03/13
20130258264 

Liquid crystal display device


A liquid crystal display device is disclosed, which includes a first substrate, a second substrate and a liquid crystal layer containing chiral dopants. The second substrate includes a blue sub-pixel region and a blue sub-pixel electrode unit disposed in the blue sub-pixel region.

10/03/13
20130258262 

Liquid crystal display


A liquid crystal display includes a first substrate, a pixel electrode disposed on the first substrate, a first alignment layer disposed on the first substrate and the pixel electrode, a second substrate disposed opposite to the first substrate; a common electrode disposed on the second substrate, a second alignment layer disposed on the second substrate and the common electrode, and a liquid crystal layer disposed between the first substrate and the second substrate, in which the liquid crystal layer includes a plurality of liquid crystal molecules and a chiral dopant, and the first alignment layer and the second alignment layer include polymers formed by photo-polymerization of reactive mesogen.. .

10/03/13
20130256795 

Ldmos with accumulation enhancement implant


A lateral double-diffused metal-oxide-semiconductor (ldmos) transistor device includes an enhancement implant region formed in a portion of an accumulation region proximate a p-n junction between body and drift drain regions. The enhancement implant region contains additional dopants of the same conductivity type as the drift drain region.

09/26/13
20130252395 

Resistive random access memory and manufacturing the same


Example embodiments relate to a resistive random access memory (rram) and a method of manufacturing the rram. A rram according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate).

09/26/13
20130250216 

Liquid crystal display device


A liquid crystal (lc) display device includes a first substrate having a pixel unit and a second substrate. The pixel unit has a pixel electrode unit including a primary electrode region.

09/05/13
20130229607 

Liquid crystal display and manufacturing the same


A liquid crystal display includes a first substrate and a second substrate facing each other, a plurality of first electrodes on the first substrate, a first vertical alignment layer on the first electrodes, a second electrode on the second substrate, a second vertical alignment layer on the second electrode, and a liquid crystal layer between the first substrate and the second substrate, wherein the liquid crystal layer includes liquid crystal molecules having negative dielectric anisotropy, a chiral dopant, and an alignment aiding agent.. .

09/05/13
20130228215 

Solar cell and manufacturing the same


A method of manufacturing a solar cell according to an embodiment includes the steps of: forming an emitter layer by ion-implanting a first conductive type dopant to a first surface of a semiconductor substrate; and forming a back surface field layer by ion-implanting a second conductive type dopant to a second surface of the semiconductor substrate. When an additional dopant is a dopant other than the first and second conductive type dopants, an amount of the additional dopant doped during the forming the back surface field layer is larger than an amount of the additional dopant doped during the forming the emitter layer..

08/29/13
20130223467 

Spherical liquid-crystal laser


The patent refers to one or more droplets of chiral liquid crystals used as point source(s) of laser light. The source is shaped as a droplet of chiral liquid crystals (1) and an active medium preferably dispersed in the liquid crystals.

08/29/13
20130221429 

Method and apparatus related to a junction field-effect transistor


In a general aspect, a semiconductor device can include a gate having a first trench portion disposed within a first trench of a junction field-effect transistor device, a second trench portion disposed within a second trench of the junction field-effect transistor device, and a top portion coupled to both the first trench portion and to the second trench portion. The semiconductor device can include a mesa region disposed between the first trench and the second trench, and including a single pn junction defined by an interface between a substrate dopant region having a first dopant type and a channel dopant region having a second dopant type..

08/22/13
20130214257 

Charge injection and transport layers


Compositions for use in hole transporting layers (htls) or hole injection layers (hils) are provided, as well as methods of making the compositions and devices fabricated from the compositions. Oled devices can be made.

08/08/13
20130203855 

Pharmaceutical dopamine glycoconjugate compositions and methods of their preparation and use


Hydrophilic transportable n-linked glycosyl dopaminergic prodrug compounds and methods of their use.. .

08/01/13
20130195745 

Surface functionalized colloidally stable spheroidal nano-apatites exhibiting intrinsic multi-functionality


Calcium-phosphate based nanoparticles (capnp) are synthesized which are simultaneously intrinsically magnetic and fluorescent, and extrinsically surface modified to serve an attachment function. Doping calcium phosphates during colloidal synthesis results in 10 nm particles that are stable in aqueous media and at physiological ph.

08/01/13
20130193376 

Liquid crystal system and liquid crystal display


The instant invention relates to mesogenic systems comprising a) a polymeric component, component a, obtained or obtainable from polymerisation of a precursor comprising one or more mesogenic mono-reactive compounds, one or more di-reactive compounds, which optionally are also mesogenic compounds and optionally a photo-initiator and a low molecular weight component, component b, comprising one or more mono-reactive, mesogenic compounds, one or more mesogenic compounds and one or more chiral dopants, exhibiting a blue phase, as well as to the use of these systems in deices and to these devices.. .

07/18/13
20130182490 

Static random access memory cell with single-sided buffer and asymmetric construction


Balanced electrical performance in a static random access memory (sram) cell with an asymmetric context such as a buffer circuit. Each memory cell includes a circuit feature, such as a read buffer, that has larger transistor sizes and features than the other transistors within the cell, and in which the feature asymmetrical influences the smaller cell transistors.

07/18/13
20130182307 

Electrochromic nickel oxide simultaneously doped with lithium and a metal dopant


An electrochromic device comprising a counter electrode layer comprised of lithium metal oxide which provides a high transmission in the fully intercalated state and which is capable of long-term stability, is disclosed. Methods of making an electrochromic device comprising such a counter electrode are also disclosed..

06/06/13
20130142866 

Compositions and methods for improved organ transplant preservation and acceptance


The invention provides a novel aqueous composition for the storage and preservation of transplants, such as organ or tissue allografts. The composition comprises the compound n-octanoyl dopamine in solubilised form.

06/06/13
20130141676 

Liquid crystal display device


A liquid crystal display device is provided. The liquid crystal display device includes a first substrate having a pixel unit with a pixel electrode.

06/06/13
20130141675 

Liquid crystal display device


A liquid crystal display device is provided. The liquid crystal display device includes a first substrate having a pixel unit, wherein the pixel unit has a pixel electrode.

05/30/13
20130134359 

Ultra high temperature shift catalyst with low methanation


A catalytic water gas shift process at temperatures above about 450° c. Up to about 900° c.

05/23/13
20130126970 

Configuration and fabrication of semiconductor structure using empty and filled wells


A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors (“igfets”), to achieve desired electronic characteristics. A relatively small amount of semiconductor well dopant is near the top of an empty well.

05/09/13
20130115308 

Doped material


A doped material comprises tio2 and three non-metal dopants. The first non-metal dopant comprises sulfur, the second non-metal dopant comprises fluorine, and the third non-metal dopant comprises carbon.

04/18/13
20130092994 

Three-dimensional semiconductor memory device


A semiconductor memory device is provided including first and second cell strings formed on a substrate, the first and second cell strings jointly connected to a bit line, wherein each of the first and second cell strings includes a ground selection unit, a memory cell, and first and second string selection units sequentially formed on the substrate to be connected to each other, wherein the ground selection unit is connected to a ground selection line, the memory cell is connected to a word line, the first string selection unit is connected to a first string selection line, and the second string selection unit is connected to a second string selection line, and wherein the second string selection unit of the first cell string has a channel dopant region.. .

04/18/13
20130092982 

Partial buried channel transfer device for image sensors


Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light.

04/11/13
20130088658 

Chlorofluorobenzene compound, optically isotropic liquid crystal medium and optical device


A liquid crystal compound and a liquid crystal medium are described. The liquid crystal compound is stable to heat and light and has a large dielectric anisotropy and a large optical anisotropy.



Popular terms: [SEARCH]

L Dopa topics: Liquid Crystal, Liquid Crystal Display, Semiconductor, Alignment Layer, Implantation, Interstitial, Enhancement, Random Access, Semiconductor Substrate, Vertical Alignment, Anisotropy, Semiconductor Device, Antiferroelectric, Transport Layer, Led Device

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