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 Semiconductor devices patent thumbnailnew patent Semiconductor devices
A method of manufacturing a semiconductor device includes partially removing an upper portion of an active fin of a substrate loaded in a chamber to form a trench; and forming a source/drain layer in the trench, which includes providing a silicon source gas, a germanium source gas, an etching gas and a carrier gas into the chamber to perform a selective epitaxial growth (seg) process using a top surface of the active fin exposed by the trench as a seed so that a silicon-germanium layer is grown; and purging the chamber by providing the carrier gas into the chamber to etch the silicon-germanium layer.. .
Samsung Electronics Co., Ltd.


 Epitaxial silicon germanium fin formation using sacrificial silicon fin templates patent thumbnailnew patent Epitaxial silicon germanium fin formation using sacrificial silicon fin templates
A method of forming semiconductor fins includes forming a plurality of sacrificial template fins from a first semiconductor material; epitaxially growing fins of a second semiconductor material on exposed sidewall surfaces of the sacrificial template fins; and removing the plurality of sacrificial template fins.. .
International Business Machines Corporation


 Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures patent thumbnailnew patent Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures
A method of forming a semiconductor device that includes forming an at least partially relaxed semiconductor material, and forming a plurality of fin trenches in the partially relaxed semiconductor material. At least a portion of the plurality of fin trenches is filled with a first strained semiconductor material that is formed using epitaxial deposition.
International Business Machines Corporation


 Multiple threshold voltage trigate devices using 3d condensation patent thumbnailnew patent Multiple threshold voltage trigate devices using 3d condensation
A method of forming a multiple threshold voltage p-channel silicon germanium trigate device using (3d) condensation. The method may include forming a first and second fin in a single semiconductor layer, where the first and second fin have similar initial widths; thinning the second fin; performing a (3d) condensation process to condense the germanium within the first and second fin; and thinning the first fin to a similar width as the second fin..
International Business Machines Corporation


 Epitaxial silicon germanium fin formation using sacrificial silicon fin templates patent thumbnailnew patent Epitaxial silicon germanium fin formation using sacrificial silicon fin templates
A method of forming semiconductor fins includes forming a plurality of sacrificial template fins from a first semiconductor material; epitaxially growing fins of a second semiconductor material on exposed sidewall surfaces of the sacrificial template fins; and removing the plurality of sacrificial template fins.. .
International Business Machines Corporation


 Culture medium containing a spore germination inhibiting or delaying compound patent thumbnailnew patent Culture medium containing a spore germination inhibiting or delaying compound
A medium for the culture and detection of target microorganisms, having at least one natural or synthetic specific substrate configured to detect at least one enzyme activity or metabolic activity of the target microorganisms and at least one compound that inhibits or delays the germination of spores of microorganisms, other than the target microorganisms, that are capable of interfering with the culture and detection of the target microorganisms.. .
Biomerieux


 Controlled germination apparatus patent thumbnailnew patent Controlled germination apparatus
Embodiments herein disclosed relate to a computer-controlled germination system built around a rotating vessel within which a germinating process takes place. The system includes automatable controls over air flow, water flow, temperature, and vessel rotation..
Salish Coast Enterprises, Inc.


 Device for generating and supplying germanium ionic water patent thumbnailnew patent Device for generating and supplying germanium ionic water
The present invention can supply a pulse to a pure germanium rod made of germanium so as to significantly increase concentration in a short period of time and shorten dissolving time, and relates to a device for generating and supplying germanium ionic water, which can promote the ionization of germanium.. .

 Shoe deodorizing degerming dehumidifier and shoe deodorizing degerming dehumidifying method patent thumbnailnew patent Shoe deodorizing degerming dehumidifier and shoe deodorizing degerming dehumidifying method
A shoe deodorizing degerming dehumidifier includes a housing, a main control circuit installed in the housing, a fan and an ozonizer. The housing is detachable from the shoes and is in a shape suitable for putting into and out from the shoe cavity.
Shenzhen Lifen Tech Co., Ltd


 Flexible polyurethane foams comprising plant seeds patent thumbnailnew patent Flexible polyurethane foams comprising plant seeds
The invention relates to a flexible polyurethane foam comprising viable and/or germinated plant seeds. The flexible polyurethane foam may comprise a reinforcing fabric composed of fibers, for example synthetic-polymer fibers or rottable natural fibers.
Basf Se


new patent

Garden planting template and weed barrier


Embodiments of a system and method for planting vegetables in raised beds are disclosed, the system includes a landscape fabric having clearly visible planting sites on the surface where a gardener can easily tear pre-formed perforated sites to create access holes to the soil. The access holes provide the proper spacing for the selected plant or seed type.
Torrinella Farm, Llc


Semiconductor device having a silicon and germanium material filling a cavity region comprising a notch region formed within a semiconductor substrate


The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a shaped cavity formed from two trench structures, and the shaped cavity is filled with silicon and germanium material.
Shanghai Huali Microelectronics Corporation


Reacted conductive gate electrodes and methods of making the same


A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium.
Taiwan Semiconductor Manufacturing Company, Ltd.


Semiconductor devices with shaped cavities for embedding germanium material and manufacturing processes thereof


The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a shaped cavity that this later to be filled with sige material.
Shanghai Huali Microelectronics Corporation


Vertical cmos structure and method


A method for forming stacked, complementary transistors is disclosed. Selective deposition techniques are used to form a column having a lower portion that includes one type of semiconductor (e.g.
Taiwan Semiconductor Manufacturing Company, Ltd.


Process for molecular layer doping of germanium substrates


A method of molecular layer doping of a germanium substrate comprises the steps of cleaning a surface of the germanium substrate to remove oxides, reacting the cleaned surface with a dopant solution comprising dopant material and a suitable solvent for the dopant at low temperature for a suitable period of time while irradiating the substrate with uv light, and thermal annealing of the germanium substrate.. .
University College Cork, National University Of Ireland, Cork


Method for forming oxide layer by oxidizing semiconductor substrate with hydrogen peroxide


In some embodiments, an oxide layer is grown on a semiconductor substrate by oxidizing the semiconductor substrate by exposure to hydrogen peroxide at a process temperature of about 500° c. Or less.
Asm Ip Holding B.v.


Germanium-bearing ferritic stainless steels


Germanium-bearing ferritic stainless steels are provided. A raw stainless steel-based material may have trace amount of germanium added.
National Tsing Hua University


Methods and compositions for ex vivo generation of developmentally competent eggs from germ line cells using autologous cell systems


The present technology provides for methods for the directed differentiation of multi-potent cells, female germ line stem cells, or oogonial stem cells into oocytes, granulosa cells and/or granulosa precursor cells, i.e.,“synthetic granulosa cells.” the synthetic granulosa cells are useful in methods for growth and maturation of follicles or follicle-like structures and immature oocytes. Additionally, the synthetic granulosa cells are useful in methods of increasing ovarian derived hormones and growth factors in a subject in need thereof..
Northeastern University


Oxidation catalyst for treating a natural gas emission


A catalytic material for treating an exhaust gas produced by a natural gas engine, which catalytic material comprises a molecular sieve and a platinum group metal (pgm) supported on the molecular sieve, wherein the molecular sieve has a framework comprising silicon, oxygen and optionally germanium, and has a content of heteroatom t-atoms is ≦about 0.20 mol %.. .
Johnson Matthey Public Limited Company


Germanium-based glass polyalkenoate cement


Disclosed herein are compositions and methods for making germanium-based glass polyalkenoate cements. Also disclosed are methods for their use as bone cements for bone augmentation procedures..
Dalhousie University


Aeroponic cultivation system


A vertical aeroponic garden utilizes removable growing panels that support plants undisturbed from germination through harvest. The panels are removable, with the supported plants, and can be delivered to a grocery location for harvest by a consumer.
Azoth Solutions, Llc


Deep gate-all-around semiconductor device having germanium or group iii-v active layer


Deep gate-all-around semiconductor devices having germanium or group iii-v active layers are described. For example, a non-planar semiconductor device includes a hetero-structure disposed above a substrate.

Strained channel region transistors employing source and drain stressors and systems including the same


Embodiments of the present invention provide transistor structures having strained channel regions. Strain is created through lattice mismatches in the source and drain regions relative to the channel region of the transistor.
Intel Corporation


Formation of strained fins in a finfet device


In an aspect of the present invention, a field-effect transistor (fet) structure is formed. The fet structure comprises a plurality of fins formed on a semiconductor substrate, wherein the plurality of fins includes a set of fins that include a base portion that is comprised of relaxed silicon-germanium (sige) and an upper portion that is comprised of semiconductor material.
International Business Machines Corporation


Dual isolation on ssoi wafer


A method of forming fins in a dual isolation complimentary-metal-oxide-semiconductor (cmos) device that includes a p-type field effect transistor device (pfet) and an n-type field effect transistor (nfet) device and a cmos device with dual isolation are described. The cmos device includes an n-type field effect transistor (nfet) region, the nfet region including one or more fins comprised of strained silicon, the one or fins in the nfet region being formed on an insulator.
International Business Machines Corporation


Dual isolation on ssoi wafer


A method of forming fins in a dual isolation complimentary-metal-oxide-semiconductor (cmos) device that includes a p-type field effect transistor device (pfet) and an n-type field effect transistor (nfet) device and a cmos device with dual isolation are described. The cmos device includes an n-type field effect transistor (nfet) region, the nfet region including one or more fins comprised of strained silicon, the one or fins in the nfet region being formed on an insulator.
International Business Machines Corporation


Tungsten for wordline applications


Disclosed herein are methods and related apparatus for formation of tungsten wordlines in memory devices. Also disclosed herein are methods and related apparatus for deposition of fluorine-free tungsten (ffw).
Lam Research Corporation


Method for manufacturing germanium epitaxial layer and manufacturing device using the same


A method for manufacturing a germanium (ge) epitaxial layer is provided. First, a substrate is provided.
United Microelectronics Corp.


Bacteria and improving plant health and growth


This application describes and claims a method of improving the health and vigor of a plant, comprising administering to the plant an effective amount of a bacterial composition which comprises a botanically compatible vehicle and an isolated bacterial strain selected from the group consisting of bacillus megaterium pt6, bacillus subtilis pt26a, paenibacillus sp. Aty16, and any combination thereof.
University Of Florida Research Foundation, Inc.


Buglossoides 'malin'


A new and distinct buglossoides arvensis plant named ‘malin’ characterized by vigorous plant growth and abundant side shoot development. Plants flower early in may and june and do not require vernalization.
Niab


Method for producing a lithium microbattery


The fabrication method of a lithium microbattery provides for use of a substrate successively covered by: a cathode, a solid electrolyte, and a first electrically conducting layer made from a material configured to combine with the lithium atoms. The first layer is devoid of contact with the cathode.
Commissariat Á L'energie Atomique Et Aux Energies Alternatives


Semiconductor structure having finfet ultra thin body


In one aspect there is set forth herein a semiconductor structure having fins extending upwardly from an ultrathin body (utb). In one embodiment a multilayer structure can be disposed on a wafer and can be used to pattern voids extending from a utb layer of the wafer.
Globalfoundries Inc.


Silicon germanium finfet formation


Methods for fabricating a fin in a fin field effect transistor (finfet), include exposing a single crystal fin structure coupled to a substrate of the finfet. The single crystal fin structure is of a first material.
Qualcomm Incorporated


Replacement fin process in ssoi wafer


A method of forming replacement fins in a complimentary-metal-oxide-semiconductor (cmos) device that includes a p-type field effect transistor device (pfet) and an n-type field effect transistor device (nfet) and a cmos device are described. The method includes forming strained silicon (si) fins from a strained silicon-on-insulator (ssoi) layer in both an nfet region and a pfet region, forming insulating layers over the strained si fins, and forming trenches within the insulating layers to expose the strained si fins in the pfet region only.
International Business Machines Corporation


Replacement fin process in ssoi wafer


A method of forming replacement fins in a complimentary-metal-oxide-semiconductor (cmos) device that includes a p-type field effect transistor device (pfet) and an n-type field effect transistor device (nfet) and a cmos device are described. The method includes forming strained silicon (si) fins from a strained silicon-on-insulator (ssoi) layer in both an nfet region and a pfet region, forming insulating layers over the strained si fins, and forming trenches within the insulating layers to expose the strained si fins in the pfet region only.
International Business Machines Corporation


Iii-v cmos integration on silicon substrate via embedded germanium-containing layer


After forming a first trench and a second trench extending through a top elemental semiconductor layer present on a substrate including, from bottom to top, a handle substrate, a compound semiconductor template layer and a buried insulator layer to define a top elemental semiconductor layer portion for a p-type metal-oxide-semiconductor transistor, the second trench is vertically expanded through the buried insulator layer to provide an expanded second trench that exposes a top surface of the compound semiconductor template layer at a bottom of the expanded second trench. A stack of a compound semiconductor buffer layer and a top compound semiconductor layer is epitaxially grown on the compound semiconductor template layer within the expanded second trench for an n-type metal-oxide-semiconductor transistor..
International Business Machines Corporation


Embedded sige epitaxy test pad


Techniques for measuring and testing a semiconductor wafer during semiconductor device fabrication include designating a test area on the top surface of the wafer and etching a first rectangular trench and a second rectangular trench on the top surface of the wafer in the test area. The trenches are oriented such that a length of the first trench is perpendicular to a length of the second trench, and positioned such that the length of the first trench, if extended, intersects the length of the second trench.
Shanghai Huali Microelectronics Corporation


Methods of forming fin isolation regions under tensile-strained fins on finfet semiconductor devices


One illustrative method disclosed herein includes, among other things, forming a composite fin structure that is comprised of a first germanium-containing semiconductor material having a first concentration of germanium and a tensile-strained second semiconductor material (having a lesser germanium concentration) positioned on the first germanium-containing semiconductor material and performing a thermal anneal process to convert the first germanium-containing semiconductor material portion of the composite fin structure into a germanium-containing oxide isolation region positioned under the second semiconductor material that is a tensile-strained final fin for an nmos finfet device.. .
Globalfoundries Inc.


High mobility transistors


An integrated circuit containing an n-channel finfet and a p-channel finfet has a dielectric layer over a silicon substrate. The fins of the finfets have semiconductor materials with higher mobilities than silicon.
Texas Instruments Incorporated


Etching method and storage medium


An etching method includes: disposing a target substrate including a silicon and a silicon-germanium within a chamber; and performing both of selectively etching the silicon-germanium with respect to the silicon and selectively etching the silicon with respect to the silicon-germanium by varying ratios of f2 gas and nh3 gas in an etching gas that has a gas system including the f2 gas and the nh3 gas.. .
Tokyo Electron Limited


Reducing substrate bowing caused by high percentage sige layers


The present invention relates generally to semiconductor devices and more particularly, to a structure and method for reducing substrate bowing resulting from the formation of strained sige layers having a high percentage of germanium (“high concentration sige”) on silicon substrates. During the epitaxial growth of the high concentration sige layer, carbon dopant atoms may be introduced to the crystalline lattice structure of the sige, forming a sige:c layer.
International Business Machines Corporation


Precursors for silicon dioxide gap fill


A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench.
Entegris, Inc.


Birthday candle blow horn apparatus and method thereof


The present invention relates generally to a birthday candle blow horn apparatus, and method thereof. More particularly, the invention encompasses a blow horn having a conical shape, and wherein the wider end of the blow horn could have a capping layer, and where the narrower end is open for the passage of air, such that when a strike is made on the capping layer a puff of air is blasted from the narrower end, which air can be used to extinguish a small flame, a lit candle, or a flame of a birthday candle.

Low palmitic acid cotton lines


Disclosed is an invention of cotton lines 2-340/1-422, 1-422/scm 3-7-3, 1-422/2-340, 1-136/2-340, afis 1-422, afis 2-340, afis 1-136, and scm 3-7-3, and relates to seeds, plants, plant cells, plant tissue and harvested products, lint, and oil, as well as to hybrid cotton plants and seeds and other plants, cultivars, and varieties produced by essentially deriving such plants, cultivars, and varieties from cotton lines 2-340/1-422, 1-422/scm 3-7-3, 1-422/2-340, 1-136/2-340, afis 1-422, afis 2-340, afis 1-136, and scm 3-7-3. The present invention particularly relates to the development of specific cotton lines for the regulation of palmitic acid for the production of seeds having cottonseed oil content with reduced levels of palmitic acid.
Texas Tech University System


System for and separating pure starch from grains for alcohol production using a dry mill process


Methods of and systems for recovering starch before fermentation in a dry mill process and/or a wet mill process. The starch is able to be further purified.
Lee Tech Llc.


Self-propelled floor apparatus and system having a bactericidal function


A self-propelled apparatus includes: a self-propelled platform having a recessed chamber located in the bottom side, a control unit mounted in the self-propelled platform for controlling the moving path of the self-propelled platform in a predominantly grid-pattern that causes the self-propelled platform to mainly move in predominantly straight lines, a battery, one or multiple germicidal ultraviolet lights exhibiting an elongated shape and mounted in the self-propelled platform within the recessed chamber in such a manner that the longitudinal axis of the germicidal ultraviolet lights is kept in parallel to the linear moving direction of the self-propelled platform, and obstacle sensors. The self-propelled apparatus utilizes a wireless module for wireless communication with an external smart device that has built therein an application software for controlling and displaying the operating status of the self-propelled apparatus..
Metapo Inc.


Pseudomonas fluorescens inhibit annual bluegrass and rough bluegrass root growth and germination


A biocontrol agent containing one or more novel and isolated pseudomonas fluorescens strains (p. Fluorescens biovar b strain xj3 (nrrl b-50851), p.
The United States Of America, As Represented By The Secretary Of Agriculture


Common light chain mouse


A genetically modified mouse is provided, wherein the mouse expresses an immunoglobulin light chain repertoire characterized by a limited number of light chain variable domains. Mice are provided that express just one or a few immunoglobulin light chain variable domains from a limited repertoire in their germline.
Regeneron Pharmaceuticals, Inc.


Thermally tuning strain in semiconductor devices


A method includes performing a first epitaxy to grow a silicon germanium layer over a semiconductor substrate, performing a second epitaxy to grow a silicon layer over the silicon germanium layer, and performing a first oxidation to oxidize the silicon germanium layer, wherein first silicon germanium oxide regions are generated. A strain releasing operation is performed to release a strain caused by the first silicon germanium oxide regions.
Taiwan Semiconductor Manufacturing Company, Ltd.


Integration of strained silicon germanium pfet device and silicon nfet device for finfet structures


A method of forming a finfet transistor device includes forming a crystalline, compressive strained silicon germanium (csige) layer over a substrate; masking a first region of the csige layer so as to expose a second region of the csige layer; subjecting the exposed second region of the csige layer to an implant process so as to amorphize a bottom portion thereof and transform the csige layer in the second region to a relaxed sige (rsige) layer; performing an annealing process so as to recrystallize the rsige layer; epitaxially growing a tensile strained silicon layer on the rsige layer; and patterning fin structures in the tensile strained silicon layer and in the first region of the csige layer.. .
International Business Machines Corporation


Semiconductor devices and methods of fabricating the same


A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate..

Integration of strained silicon germanium pfet device and silicon nfet device for finfet structures


A method of forming a finfet transistor device includes forming a crystalline, compressive strained silicon germanium (csige) layer over a substrate; masking a first region of the csige layer so as to expose a second region of the csige layer; subjecting the exposed second region of the csige layer to an implant process so as to amorphize a bottom portion thereof and transform the csige layer in the second region to a relaxed sige (rsige) layer; performing an annealing process so as to recrystallize the rsige layer; epitaxially growing a tensile strained silicon layer on the rsige layer; and patterning fin structures in the tensile strained silicon layer and in the first region of the csige layer.. .
Stmicroelectronics, Inc.


Semiconductor structure in which film including germanium oxide is provided on germanium layer, and manufacturing semiconductor structure


A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 μm square area of the upper surface of the germanium layer is 0.7 nm or less.. .
Japan Science And Technology Agency


Semiconductor substrate and semiconductor device including the same


A semiconductor substrate and a semiconductor device are provided. The semiconductor substrate includes a base substrate, a first silicon germanium layer on the base substrate and a second silicon germanium layer on the first silicon germanium layer.

Methods and systems for improved uniformity of sige thickness


A process is used to form a protective layer to cover a divot between two regions of a semiconductor material. During etching processes, the protective layer protects the divot to be etched away and reduces material loss of a silicon (si)-shallow trench isolation (sti) substrate.
Shanghai Huali Microelectronics Corporation


Footwear sanitizing system


Introducing ultraviolet (uv) light to interior portions of footwear alters the environment inside a shoe or other footwear to destroy microorganisms or inhibit their growth. Visible light can also be used to prevent further microorganism growth.
Shoe Care Innovations, Inc.


Chlorogenic acid-containing composition, manufacturing same, and drink or food item


Provided are a method for manufacturing a chlorogenic acid-containing composition, including a chlorogenic acid extraction step of obtaining a chlorogenic acid-containing liquid extract from sunflower seed residues remaining after oil expression by bringing chlorogenic acid and saccharides derived from the sunflower seed residues remaining after oil expression into contact with yeast and a solvent selected from the group consisting of water, an alcohol, and a liquid mixture of water and an alcohol, and a bacterial treatment step of performing at least one treatment selected from germicidal treatment or sterilization treatment on the liquid extract, a chlorogenic acid-containing composition obtained by the manufacturing method, and a drink or food item containing the chlorogenic acid-containing composition.. .
Fujifilm Corporation




Germ topics:
  • Semiconductor
  • Transistors
  • Semiconductor Material
  • Ion Source
  • Optical Fiber
  • Photodiode
  • Electrical Signal
  • Level Shift
  • Source Follower
  • Transimpedance Amplifier
  • Movable Barrier
  • Prophylactic
  • Immunoglobulin
  • Immunoglobulins
  • Evaporator


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    This listing is a sample listing of patent applications related to Germ for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Germ with additional patents listed. Browse our RSS directory or Search for other possible listings.


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