|| List of recent Germ-related patents
| Multi-standard socket adaptor|
The present invention provides a multi-standard socket adaptor, comprising at least one socket interface and a housing attached to the socket interface. The internal of the housing comprises a first terminal set and a second terminal set conforming to the 125-volt and 250-volt socket specifications respectively; wherein the socket adaptor further comprises a first socket set and a second socket set corresponding to the first and second terminal sets respectively as well as confirming to the 125-volt and 250-volt socket specifications.
| Methods and apparatus for forming tantalum silicate layers on germanium or iii-v semiconductor devices|
Described are apparatus and methods for forming tantalum silicate layers on germanium or iii-v materials. Such tantalum silicate layers may have si/(ta+si) atomic ratios from about 0.01 to about 0.15.
| Atomic layer deposition of geo2|
Atomic layer deposition processes for forming germanium oxide thin films are provided. In some embodiments the ald processes can include the following: contacting the substrate with a vapor phase tetravalent ge precursor such that at most a molecular monolayer of the ge precursor is formed on the substrate surface; removing excess ge precursor and reaction by products, if any; contacting the substrate with a vapor phase oxygen precursor that reacts with the ge precursor on the substrate surface; removing excess oxygen precursor and any gaseous by-products, and repeating the contacting and removing steps until a germanium oxide thin film of the desired thickness has been formed..
| Method and apparatus for forming gate stack on si, sige or ge channels|
Provided are methods and apparatus for functionalizing a substrate surface used as the channel in a gate stack. Silicon, germanium and silicon germanium substrates surfaces are functionalized with one or more of sulfur and selenium by plasma processing..
| Sprouted cereal, method for manufacturing same, food product containing same, and bdnf production accelerator|
The invention relates to a novel technique for germinating a sproutable food such as rice, other types of cereals, or seeds. Provided is a novel germination technique capable of increasing a content of glutamate, accelerating an enrichment of gamma-aminobutyric acid, and exerting excellent functionality for the body, and a novel functional food material or pharmaceutical agent.
| Use of lactobacillus for liver protection|
A method for liver protection of a mammal is provided and includes administering an effective amount of isolated lactobacillus plantarum cmu995 thereto. Providing a new use of lactobacillus plantarum cmu995, which is deposited at the food industry research and development institute (firdi) in taiwan under accession number bcrc 910472 and in the german collection of microorganisms and cell cultures (dsmz) under accession number dsm 23780..
| Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for cmos devices|
A semiconductor device including a germanium containing substrate including a gate structure on a channel region of the semiconductor substrate. The gate structure may include a silicon oxide layer that is in direct contact with an upper surface of the germanium containing substrate, at least one high-k gate dielectric layer in direct contact with the silicon oxide layer, and at least one gate conductor in direct contact with the high-k gate dielectric layer.
| Semiconductor structures and fabrication method|
A method is provided for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, and forming a shallow trench isolation structure in the semiconductor substrate.
| Semiconductor device having buried bit lines and method for fabricating the same|
A semiconductor device includes semiconductor bodies formed substantially perpendicular to a semiconductor substrate, buried bit lines formed in the semiconductor bodies and including a metal silicide; and barrier layers formed under and over the buried bit lines and containing germanium.. .
| Semiconductor device having buried bit lines and method for fabricating the same|
A semiconductor device includes body lines, formed substantially perpendicular to a substrate, and having recessed sidewalls, buried bit lines, buried in the recessed sidewalls, and including a metal silicide, and a barrier layer interposed between each of the buried bit lines and the body lines corresponding thereto, and containing germanium.. .
| Semiconductor device and method of manufacturing thereof|
A method for manufacturing a transistor device is provided, the transistor device comprising a germanium based channel layer, the method comprising providing a gate structure on the germanium comprising channel layer provided on a substrate, the gate structure being provided between a germanium based source area and a germanium based drain area at opposite sides of the germanium comprising channel layer; providing a capping layer on the germanium based source and the germanium based drain area, the capping layer comprising si and ge; depositing a metal layer on the capping layer; performing a temperature step, thereby transforming at least part of the capping layer into a metal germano-silicide which is not soluble in a predetermined etchant adapted for dissolving the metal; selectively removing non-consumed metal from the substrate by means of the predetermined etchant; and providing a premetal dielectric layer.. .
| Germanium-based quantum well devices|
A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel.
| Touch screen barrier system|
A touch screen barrier system having a multiple layer touch screen barrier and dispenser. The touch screen barrier adheres to a user's forger or thumb to provide a barrier to the touch screen or other public device, such as elevator buttons, to prevent the transfer of oils, germs or other debris that cause smudges on the screen during use or transfer germs.
|Methods of forming a layer of silicon on a layer of silicon/germanium|
Disclosed herein are various methods of forming a layer of silicon on a layer of silicon/germanium. In one example, a method disclosed herein includes forming a silicon/germanium material on a semiconducting substrate, after forming the silicon/germanium material, performing a heating process to raise a temperature of the substrate to a desired silicon formation temperature while flowing a silicon-containing precursor and a chlorine-containing precursor into the deposition chamber during the heating process, and, after the temperature of the substrate reaches the desired silicon formation temperature, forming a layer of silicon on the silicon/germanium material..
|Using fast anneal to form uniform ni(pt)si(ge) contacts on sige layer|
Techniques for forming a smooth silicide without the use of a cap layer are provided. In one aspect, a cap layer-free method for forming a silicide is provided.
|Iii-v photovoltaic element and fabrication method|
A solar cell structure includes stacked layers in reverse order on a germanium substrate. A heterostructure including an (in)gaas absorbing layer and a disordered emitter layer is provided in the solar cell structures.
A compound represented by the formula (i) (one of substituents represented by r1 is a trapping group for an object substance for measurement; r2 and r3 represent hydrogen, alkyl, or halogen; r4 and r5 represent alkyl or aryl; r6 and r7 represent hydrogen, alkyl, or halogen; r8 represents hydrogen, alkylcarbonyl, or alkylcarbonyloxymethyl, and x represents silicon, germanium, or tin, which can be used as a fluorescent probe that enables red color bioimaging using intramolecular photoinduced electron transfer.. .
|Germanate-containing thermal barrier coating|
A thermal barrier coating having a reduced high temperature thermal conductivity includes group ii germanate constructs. This thermal barrier coating may be applied directly to a substrate, applied to a bond-coated substrate, and/or incorporated into a protective coating including one or more other thermal barrier coating layers.
|Reduction of proximity effects in field-effect transistors with embedded silicon-germanium source and drain regions|
An integrated circuit and method of fabricating the same utilizing embedded silicon-germanium (sige) source/drain regions, and in which the proximity effect of nearby shallow trench isolation structures is reduced. Embedded sige source/drain structures are formed by selective epitaxy into recesses etched into the semiconductor surface, on either side of each gate electrode.
|Silicon germanium channel with silicon buffer regions for fin field effect transistor device|
A fin field effect transistor (finfet) device includes a substrate; first and second source/drain regions located on the substrate; and a fin located on the substrate between the first and second source/drain regions. The fin includes a silicon germanium channel region and first and second silicon buffer regions located in the fin adjacent to and on either side of the silicon germanium channel region.
|Using fast anneal to form uniform ni(pt)si(ge) contacts on sige layer|
Techniques for forming a smooth silicide without the use of a cap layer are provided. In one aspect, a fet device is provided.
|Techniques for forming non-planar germanium quantum well devices|
Techniques are disclosed for forming a non-planar germanium quantum well structure. In particular, the quantum well structure can be implemented with group iv or iii-v semiconductor materials and includes a germanium fin structure.
|Method and structure of monolithically integrated ic and resistive memory using ic foundry-compatible processes|
The present invention relates to integrating a resistive o y device on top of an ic substrate monolithically using ic-foundry compatible processes. A method for forming an integrated circuit includes receiving a semiconductor substrate having a cmos ic device formed on a surface region, forming a dielectric layer overlying the cmos ic device, forming first electrodes over the dielectric layer in a first direction, forming second electrodes over the first electrodes in along a second direction different from the first direction, and forming a two-terminal resistive memory cell at each intersection of the first electrodes and the second electrodes using foundry-compatible processes, including: forming a resistive switching material having a controllable resistance, disposing an interface material including p-doped polycrystalline silicon germanium—containing material between the resistive switching material and the first electrodes, and disposing an active metal material between the resistive switching material and the second electrodes..
|Method of and system for producing oil and valuable byproducts from grains in dry milling systems with a back-end dewater milling unit|
A method of and system for producing oil and valuable byproducts from grains, such as corn, in dry mills are disclosed. The method and system include dewater milling process after fermenting.
|Methods and apparatus for facilitating the germination of seeds and growth of seedlings|
The present invention relates to methods and apparatus for facilitating the germination of seeds and growth of seedlings. One aspect of the invention provides a seed kit.
|Systems, methods, and devices for insulated grain germination|
An insulated grain germination unit is disclosed. The insulated grain germination unit is comprised of a plurality of insulated doors, each insulated door corresponding to a particular tray, or set of trays, and pivoting to permit access to the tray(s) housed within the unit thus minimizing impact to the internal growing environment for the remaining trays.
|Method of preparing regenerated hair follicle germ for transplantation in which hair color is controlled, composition including regenerated hair follicle germ for transplantation, and method of transplanting regenerated hair follicle germ|
A method for producing a regenerative hair follicle germ for transplantation, in which a color of hair that grows after transplantation is controlled, includes preparing a first cell mass containing mesenchymal cells; preparing a second cell mass containing epithelial cells; preparing a cell mass containing pigment stem cells; binding the cell mass containing the pigment stem cells to at least one among the first cell mass and the second cell mass, and closely contacting the first cell mass and the second cell mass, at least one of which has been bound to the cell mass containing the pigment stem cells, and culturing them within a support.. .
|Method for controlling coniferous plants|
A method for controlling coniferous plants, in particular naturally seeded coniferous plants (wildling conifers), wherein an effective amount of at least one herbicide selected from the group consisting of sulfentrazone, carfentrazone, their agriculturally acceptable salts and their agriculturally acceptable derivatives is applied to the coniferous plants to be controlled or to their parts, such as roots, leaves, seeds or germinants.. .
|Negative electrode active material for lithium secondary battery and lithium secondary battery comprising the same|
Provided is a negative electrode active material comprising (a) a core including one or more non-carbon-based materials selected from the group consisting of silicon, nickel, germanium, and titanium, and (b) an organic polymer coating layer formed of a polymer compound having a content of a fluorine component of 50 wt % or more on a surface of the core.. .
|Seed classification using spectral analysis to determine existence of a seed structure|
This disclosure relates to a method and system that models a seed structure and uses a spectral analysis to identify which morphological seed structures are existent in the seed/seedling. Additionally, this disclosure relates to a method and system that applies multi-spectral analysis using predetermined models of a seed/seedling to identify which morphological structures are existent in the seed/seedling.
|Cmos-compatible gold-free contacts|
A semiconductor metallurgy includes a ratio of germanium and palladium that provides low contact resistance to both n-type material and p-type material. The metallurgy allows for a contact that does not include gold and is compatible with mass-production cmos techniques.
|Low-voltage high-gain high-speed germanium photo detector and method of fabricating the same|
Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer.
|Heterostructure germanium tandem junction solar cell|
A photovoltaic device that includes an upper cell that absorbs a first range of wavelengths of light and a bottom cell that absorbs a second range of wavelengths of light. The bottom cell includes a heterojunction comprising a crystalline germanium containing (ge) layer.
|Method of supercritical fluid fractionation of oil seed extraction materials|
Generally, a method of pressure regulated supercritical fluid fractionation of oil seed extraction materials which can be utilized to refine oil seed extraction material established in an amount of supercritical fluid. Specifically, a method of pressure regulated supercritical fluid fractionation of corn germ extraction material to produce a refined corn oil extraction material..
|Reducing risk of contracting clostridium-difficile associated disease|
A method of treating a patient to reduce risk of developing clostridium difficile-associated disease or reducing existing clostridium difficile-associated disease in a mammalian subject involves administering to a mammalian subject an effective amount of a germination-inhibiting compound derived from taurocholate. Novel compounds of this class are also provided..
|Laser device for emitting waves in the terahertz range|
A laser device for emitting waves in a frequency range belonging to the terahertz range, includes the following, in combination: a wave guide extending longitudinally along an axis a-a′; a superconducting coil arranged coaxially to the wave guide and arranged at a first end of the wave guide; a p-ge p-doped germanium crystal arranged inside the coil such that the turns of the superconducting coil at least partially surround the p-ge crystal; a cooling device containing a coolant, the superconducting coil and the p-ge crystal being arranged in the cooling device, and the wave guide partially extending outside the cooling device; and removing the coolant from the wave guide.. .
|Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor|
A high order silane having a formula of sinh2n+2, in which n is an integer greater than 3, in combination with a germanium precursor gas is employed to deposit an epitaxial semiconductor alloy material including at least silicon and germanium on a single crystalline surface. The germanium precursor gas effectively reduces the gas phase reaction of the high order silane, thereby improving the thickness uniformity of the deposited epitaxial semiconductor alloy material.
|Methods for manufacturing a field-effect semiconductor device|
A method of fabricating a field-effect transistor is disclosed. In one aspect, the method includes forming a channel layer comprising germanium over a substrate.
|Device and method for measuring temperature of heat-treated workpiece|
A device is provided with a measurement window, which is provided in a heat treat furnace and which permits direct visual observation of a surface to be measured of a heat-treated workpiece, and a temperature sensor, which is provided outside the measurement window and which is capable of carrying out noncontact measurement of the surface temperature of the surface to be measured through the measurement window. The temperature sensor has a measurement wavelength range in which the absorptivity by water is low (e.g., 1.95 μm to 2.5 μm).
|Methods and compositions for producing watermelon plants with selected seed sizes|
The present disclosure provides for unique watermelon plants with a desired seed size phenotype and their progeny. Such plants may comprise an introgressed qtl associated with a desired seed size phenotype.
|Solid germicidal composition and disinfection method|
Wherein, r1 represents a saturated linear alkyl group having 1 to 3 carbon atoms, r2 represents a saturated linear alkyl group having 8 to 12 carbon atoms, x− represents a halogen ion and y represents a saturated linear alkylene group having 8 to 12 carbon atoms is disclosed. A method for disinfecting an object, which comprises contacting an aqueous solution of the composition with the object, is also disclosed.
|Use of prolines for improving growth and/or yield|
The present invention describes a composition including a mixture of l- and d-pyroglutamate stereoisomers in a ratio of l to d of from about 80:20 to about 97:3, and, a carrier medium for application of the l- and d-pyroglutamate stereoisomers to a target plant. The composition can also be used as a germination medium and may be incorporated into a seed coat for assisting in germination.
|Embedded silicon germanium n-type filed effect transistor for reduced floating body effect|
A method for fabricating a semiconductor device includes forming a gate stack on an active region of a silicon-on-insulator substrate. The active region is within a semiconductor layer and is doped with an p-type dopant.