This page is updated frequently with new Germ-related patent applications.
|Contacts for highly scaled transistors|
A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain(s/d) regions, a channel between the first and second s/d regions, a gate engaging the channel, and a contact feature connecting to the first s/d region.
Taiwan Semiconductor Manufacturing Co., Ltd.
|Semiconductor device and forming the same|
A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate.
Taiwan Semiconductor Manufacturing Co., Ltd.
|Devices and methods of creating elastic relaxation of epitaxially grown lattice mismatched films|
Devices and methods of creating elastic relaxation of epitaxially grown lattice mismatched films for semiconductor devices are provided. One method includes, for instance: obtaining a wafer including a substrate; epitaxially growing at least one first silicon germanium (sige) layer over the wafer; and epitaxially growing at least one second sige layer over the at least one first sige layer.
|Strained stacked nanowire field-effect transistors (fets)|
A method for manufacturing a semiconductor device comprises epitaxially growing a plurality of silicon layers and compressively strained silicon germanium (sige) layers on a substrate in a stacked configuration, wherein the silicon layers and compressively strained sige layers are alternately stacked on each other starting with a silicon layer on a bottom of the stacked configuration, patterning the stacked configuration to a first width, selectively removing a portion of each of the silicon layers in the stacked configuration to reduce the silicon layers to a second width less than the first width, forming an oxide layer on the compressively strained sige layers of the stacked configuration, wherein forming the oxide layer comprises fully oxidizing the silicon layers so that portions of the oxide layer are formed in place of each fully oxidized silicon layer, and removing part of the oxide layer while maintaining at least part of the portions of the oxide layer formed in place of each fully oxidized silicon layer, wherein the compressively strained sige layers are anchored to one another and a compressive strain is maintained in each of the compressively strained sige layers.. .
International Business Machines Corporation
|Method of forming nanostructure, manufacturing semiconductor device using the same, and semiconductor device including nanostructure|
Provided are methods of forming nanostructures, methods of manufacturing semiconductor devices using the same, and semiconductor devices including nanostructures. A method of forming a nanostructure may include forming an insulating layer and forming a nanostructure on the insulating layer.
Samsung Electronics Co., Ltd.
|Semiconductor device and manufacturing method thereof|
A semiconductor device and a method of manufacturing the same, the semiconductor device includes a fin shaped structure, a gate structure, an epitaxial layer, a germanium layer, an interlayer dielectric layer and a first plug. The fin shaped structure is disposed on a substrate.
United Microelectronics Corp.
|Method of preventing accidental shootings with a firearm safety beacon|
A method of preventing accidental shooting requires a safety beacon and a firearm that has a computing device and a wireless receiver. The method begins by continuously transmitting a warning signal with the safety beacon and by continuously monitoring for the warning signal with the wireless receiver.
|Methods for producing corn plants with downy mildew resistance and compositions thereof|
The present disclosure is in the field of plant breeding and disease resistance. The disclosure provides methods for breeding corn plants having downy mildew (dm) resistance using marker-assisted selection.
Monsanto Technology Llc
|Humanized monoclonal antibodies and methodsof use|
The present invention comprises a humanized monoclonal antibody that binds to the human immunoglobulin heavy chain variable region germline gene vh1-69. This antibody is derived from mab g6 and recognizes the same epitope.
Dana-farber Cancer Institute, Inc.
Disclosed herein are humanized antibodies in which human germline residues are introduces to the complementarity determining regions (cdrs) of a non-human donor antibody. Also described herein are libraries of antibody variable domains (e.g., phage-display libraries) and methods for screening for humanized antibodies..
Method of fabrication of al/ge bonding in a wafer packaging environment and a product produced therefrom
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry cmos process.
Ultraviolet disinfecting device for food and beverage dispensers
Disinfecting devices and related methods are provided that apply germicidal ultraviolet light to disinfect dispensing components of food and beverage dispensers. A disinfecting holster for a bar gun includes a support surface configured to interface with a bar gun to support the bar gun when stowed in the holster, a housing coupled with the support surface and surrounding a dispensing nozzle of the bar gun when the bar gun is stowed in the holster, and an ultraviolet light source configured to emit germicidal ultraviolet light onto the nozzle.
Automatic Bar Controls, Inc.
Hydrogen free amorphous silicon as insulating dielectric material for superconducting quantum bits
A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature tsub under high vacuum and at a controlled low deposition rate.
The Government Of The United States Of America, As Represented By The Secretary Of The Navy
Semiconductor device and manufacturing the same
A performance of a semiconductor device is improved. In a method of manufacturing a semiconductor device, a first semiconductor portion and a second semiconductor portion made of silicon are formed on a base body via an insulation layer, and a third semiconductor portion including a semiconductor layer made of germanium is formed on the second semiconductor portion.
Photonics Electronics Technology Research Association
Method of forming a semiconductor device
In a first aspect, the present disclosure provides a method of forming a semiconductor device, including providing an soi structure comprising a base substrate, a buried insulating material layer formed on the base substrate and an active semiconductor layer formed on the buried insulating structure, forming a germanium-comprising layer on an exposed surface of the active semiconductor layer, forming a trench isolation structure, the trench isolation structure extending through the germanium-comprising layer and the active semiconductor layer, performing an annealing process after the trench isolation structure is formed, the annealing process resulting in an oxide layer disposed on a germanium-comprising active layer which is formed on the buried insulating material layer, and removing the oxide layer for exposing an upper surface of the germanium-comprising active layer.. .
Formation of nickel silicon and nickel germanium structure at staggered times
A semiconductor device includes a substrate, first and second metals, and a second semiconductor material. The substrate includes a first semiconductor material and has first and second substrate portions.
Taiwan Semiconductor Manufacturing Company Limited
Atomic layer deposition of germanium or germanium oxide
A process of depositing germanium on a substrate includes sequentially exposing in at least one deposition cycle the substrate inside a chamber with a ge-containing precursor and a reducing or oxidizing precursor.. .
Materials for near field transducers, near field tranducers containing same, and methods of forming
A device including a near field transducer, the near field transducer including gold (au), silver (ag), copper (cu), or aluminum (al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (b), bismuth (bi), indium (in), sulfur (s), silicon (si), tin (sn), manganese (mn), tellurium (te), holmium (ho), lutetium (lu), praseodymium (pr), scandium (sc), uranium (u), barium (ba), chlorine (cl), cesium (cs), dysprosium (dy), europium (eu), fluorine (f), germanium (ge), hydrogen (h), iodine (i), rubidium (rb), selenium (se), terbium (tb), nitrogen (n), oxygen (o), carbon (c), antimony (sb), gadolinium (gd), samarium (sm), thallium (tl), cadmium (cd), neodymium (nd), phosphorus (p), lead (pb), hafnium (hf), niobium (nb), erbium (er), zinc (zn), magnesium (mg), palladium (pd), vanadium (v), zinc (zn), chromium (cr), iron (fe), lithium (li), nickel (ni), platinum (pt), sodium (na), strontium (sr), calcium (ca), yttrium (y), thorium (th), beryllium (be), thulium (tm), erbium (er), ytterbium (yb), promethium (pm), neodymium (nd cobalt (co), cerium (ce), lanthanum (la), praseodymium (pr), or combinations thereof.. .
Seagate Technology Llc
Atms bank emergency response system
The atms network is a security platform built on atm technology implementing a new atms terminal booth enclosure, adaptable sensor array technology, plaza surveillance technologies that provide live audio/video streaming 24/7 to the atms bers cloud service and new security protocols. The banking customer now has a means of protection with the new berspa and bersda pin numbers added to their emv cards that implement immediate assistance when used at an atms terminal.
Drinking and service water supply device of a building, and regulating valve therefor
The present invention relates to a drinking and service water supply device (1) of a building with at least one circulation pipe (3) leading to at least one consumer (12) and with a regulating valve installed in the circulation pipe, and in a coordinated aspect to a regulating valve (18) for hot-water circulation systems, comprising a valve housing (20) into which a thermostatic element (25) which is controlled by water temperature is installed as a setting member for a regulation member (30) which cooperates with a valve seat (34) with a flow opening (35) between inlet and outlet channel (21, 22) of the valve housing (20) for regulating the water flow rate. It is desired in drinking and service water supply devices that strongly cooled-down hot water is replaced as rapidly as possible by heated water to avoid, if possible, germ formation in the water and a drop of the water temperature at the consumer.
Gebr. Kemper Gmbh + Co. Kg Metallwerke
Methods and compositions for the targeted modification of a genome
Compositions and methods are provided for modifying a genomic locus of interest in a eukaryotic cell, a mammalian cell, a human cell or a non-human mammalian cell using a large targeting vector (ltvec) comprising various endogenous or exogenous nucleic acid sequences as described herein. Further methods combine the use of the ltvec with a crispr/cas system.
Regeneron Pharmaceuticals, Inc.
Biochar and fly ash germination accelerant system
A biochar and fly ash germination accelerant system for improving soil conditions for seed germination and growth. The biochar and fly ash germination accelerant system generally includes a base material comprised of activated carbon in a granular material state and a liming material combined with the base material.
Ag Energy Solutions, Inc.
Ozone-assisted fluid treatment apparatus and method
An apparatus for treating fluid in a main reservoir includes an auxiliary reservoir and filter located outside the main reservoir. Ozonated air bubbles are injected by a diffuser into a lift tube containing fluid from the main reservoir.
Process for the continuous preparation of phyllomineral synthetic particles
A process for preparing phyllomineral synthetic particles formed from constituent chemical elements in stoichiometric proportions including at least one chemical element selected from the group formed from silicon and germanium, and at least one chemical element selected from the group formed from divalent metals and trivalent metals, by a continuous solvothermal treatment at a pressure above 1 mpa and at a temperature between 100° c. And 600° c., by making the reaction medium circulate continuously in a solvothermal treatment zone of a continuous reactor (15) with a residence time of the reaction medium in the solvothermal treatment zone that is suitable for continuously obtaining, at the outlet of the solvothermal treatment zone, a suspension including the phyllomineral synthetic particles..
Universite Paul Sabatier Toulouse Iii
Humanized il-7 rodents
Genetically modified non-human animals comprising a human or humanized interleukin-7 (il-7) gene. Cells, embryos, and non-human animals comprising a human or humanized il-7 gene.
Regeneron Pharmaceuticals, Inc.
Downy mildew resistant lettuce plants
The present disclosure provides lettuce plants exhibiting resistance to downy mildew. Such plants may comprise novel introgressed genomic regions associated with disease resistance from l.
Seminis Vegetable Seeds, Inc.
Non-aqueous electrolyte secondary battery
A non-aqueous electrolyte secondary battery having a high capacity and a long life is provided by eliminating or reducing the structural change of a positive electrode active material at high voltages. The non-aqueous electrolyte secondary battery includes a positive electrode having a positive electrode active material that intercalates and deintercalates lithium ions, a negative electrode having a negative electrode active material that intercalates and deintercalates lithium ions, and a non-aqueous electrolyte.
Sanyo Electric Co., Ltd.
Crystal orientation layer laminated structure, electronic memory and manufacturing crystal orientation layer laminated structure
A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of sbte, sb2te3, bite, bi2te3, bise and bi2se3 as a main component, and which is oriented in a certain crystal orientation.
National Institute Of Advanced Industrial Science And Technology
Combining materials in different components of selector elements of integrated circuits
Provided are selector elements having snapback characteristics and non-volatile memory cells comprising such selector elements. To achieve its snapback characteristic, a selector element may include a dielectric layer comprising an alloy of two or more materials.
Cmos-based thermopile with reduced thermal conductance
In described examples, an embedded thermoelectric device is formed by forming isolation trenches in a substrate, concurrently between cmos transistors and between thermoelectric elements of the embedded thermoelectric device. Dielectric material is formed in the isolation trenches to provide field oxide which laterally isolates the cmos transistors and the thermoelectric elements.
Texas Instruments Incorporated
Co-integration of tensile silicon and compressive silicon germanium
Integrated circuits are disclosed in which the strain properties of adjacent pfets and nfets are independently adjustable. The pfets include compressive-strained sige on a silicon substrate, while the nfets include tensile-strained silicon on a strain-relaxed sige substrate.
Method of improving ion beam quality in an implant system
A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece.
Varian Semiconductor Equipment Associates, Inc.
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