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This page is updated frequently with new Germ-related patent applications. Subscribe to the Germ RSS feed to automatically get the update: related Germ RSS feeds. RSS updates for this page: Germ RSS RSS


Method for forming germanium-based layer

Germicidal heating apparatus using superheated vapor


Date/App# patent app List of recent Germ-related patents
08/27/15
20150243787 
 Method for a uniform compressive strain layer and device thereof patent thumbnailMethod for a uniform compressive strain layer and device thereof
A methodology for forming a compressive strain layer with increased thickness that exhibits improved device performance and the resulting device are disclosed. Embodiments may include forming a recess in a source or drain region of a substrate, implanting a high-dose impurity in a surface of the recess, and depositing a silicon-germanium (sige) layer in the recess..
Globalfoundries Inc.


08/27/15
20150243752 
 Reacted conductive gate electrodes and methods of making the same patent thumbnailReacted conductive gate electrodes and methods of making the same
A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium.
Taiwan Semiconductor Manufacturing Co., Ltd.


08/27/15
20150243506 
 Method for forming germanium-based layer patent thumbnailMethod for forming germanium-based layer
A method for forming a germanium-based layer is provided. The method includes: providing a substrate having a ge or gesi surface layer; and implanting atoms, molecules, ions or plasmas containing an element sn into the ge surface layer to form a ge-based gesn layer, or implanting atoms, molecules, ions or plasmas containing an element sn into the gesi surface layer to form a ge-based gesnsi layer, or co-implanting atoms, molecules, ions or plasmas containing elements sn and si into the ge surface layer to form a ge-based gesnsi layer..
Tsinghua University


08/27/15
20150241053 
 Germicidal heating apparatus using superheated vapor patent thumbnailGermicidal heating apparatus using superheated vapor
A germicidal heating apparatus comprising a water supply part for supplying water, an superheated vapor generation part for generating superheated vapor by using the water supplied from the water supply part, and a blower for blowing the superheated vapor generated by the superheated vapor generation part through a discharge opening, characterized in that the superheated vapor generation part includes an annular vessel for receiving the water from the water supply part, and a spiral sheath heater arranged on the whole inside peripheral surface of the annular vessel, the upper end of the inside wall of the annular vessel being bent closely contacting the outside wall so as both to prevent leakage of the water contained in the annular vessel and to discharge the vapor generated by the heat of the sheath heater.. .

08/27/15
20150240266 
 Dry grind ethanol production process and system with front end milling method patent thumbnailDry grind ethanol production process and system with front end milling method
A dry grind ethanol production process and system with front end milling method is provided for improving alcohol and/or by-product yields, such as oil and/or protein yields. In one example, the process includes grinding corn kernels into particles then mixing the corn particles with a liquid to produce a slurry including oil, protein, starch, fiber, germ, and grit.
Lee Tech Llc


08/27/15
20150240256 
 Compositions and methods for peronospora resistance in spinach patent thumbnailCompositions and methods for peronospora resistance in spinach
The invention provides for spinach plants with broad-spectrum resistance to downy mildew disease and their progeny. Such plants may comprise unique combinations of alleles resulting in the broad-spectrum resistance to downy mildew.
Seminis Vegetable Seeds, Inc.


08/27/15
20150240255 
 Modulation of seed vigor patent thumbnailModulation of seed vigor
The present invention provides a polynucleotide which enables the modulation of the seed vigour, and in particular enhances the seed vigour, and more particularly enables the modification of the speed of germination. A plant seed comprising the said polynucleotide is also provided.
Syngenta Participations Ag


08/27/15
20150237867 
 Aqueous alcoholic microbicidal compositions comprising zinc ions patent thumbnailAqueous alcoholic microbicidal compositions comprising zinc ions
Treatment compositions which impart a microbicidal benefit to treated surfaces which compositions comprise (or in certain preferred embodiments may consist essentially of, or may consist of) as constituents: a zinc source material which releases zinc ions into the treatment composition, preferably a source of zn++ ions; at least one lower alkyl monohydric alcohol (preferably at least about 25% wt. Of a lower alkyl monohydric alcohol); at least one quaternary ammonium compound which provides a microbicidal benefit; optionally one or more further optional constituents which impart one or more advantageous technical or aesthetic benefits to the compositions, including one or more detersive surfactants; wherein the composition has a ph of at least 5, wherein the surface treatment compositions are characterized in exhibiting a microbicidal benefit, especially preferably against poliovirus type 1 sabin (“pv1”), when tested according to one or more of the following standardized test protocols: astm e1052 standard test method for efficacy of antimicrobial agents against viruses in suspension, or astm e1053 standard test method to assess virucidal activity of chemicals intended for disinfection of inanimate, nonporous environmental surfaces, or european standard surface test, en13697, or aoac germicidal spray products as disinfectant test method, aoac index, 17th ed.
Reckitt Benckiser Llc


08/27/15
20150237856 
 Chitooligosaccharides and methods for use in enhancing corn growth patent thumbnailChitooligosaccharides and methods for use in enhancing corn growth
Disclosed are methods of enhancing growth of corn plants, comprising treating corn seed or the corn plant that germinates from the seed with an effective amount of at least one chitooligosaccharide, wherein upon harvesting the corn plant exhibits at least one of increased plant yield measured in terms of bushels/acre, increased root number, increased root length, increased root mass, increased root volume and increased leaf area, compared to untreated corn plants or corn plants harvested from untreated corn seed.. .
Novozymes Bioag A/s


08/27/15
20150237820 
 Method of creating a spring brassica napus patent thumbnailMethod of creating a spring brassica napus
Crossing a winter b. Napus line with a rapid-cycle b.
Cargill, Incorporated


08/27/15
20150237806 

Method of internal seed disinfection by combining seed priming with vacuum infiltration


Embodiments of the disclosed technology are directed to a method for combining seed priming and vacuum infiltration to facilitate deep penetration of chemicals or other substances into seeds. By combining the two processes, the germination process of seeds can be started allowing a relatively lengthy period of disinfection.

08/27/15
20150237792 

Seed testing method and apparatus


To provide an accelerated aging seed testing kit system, a single sheet of plastic or other suitable formable sheet material is pressed into the shape of a compartment base having recesses for mounting a seed holder. A seed holder that includes a seed support and a seed support holder is formed.
Kamterter Products, Llc


08/20/15
20150236343 

Coated electrodes for lithium batteries


A coated electrode includes a negative electrode and a carbon coating adhered to a surface of the negative electrode. The negative electrode includes an active material selected from the group consisting of lithium, silicon, silicon oxide, a silicon alloy, graphite, germanium, tin, antimony, or a metal oxide; a conductive filler; and a polymer binder.
Gm Global Technology Operations Llc


08/20/15
20150236259 

Switching components and memory units


Some embodiments include a switching component which includes a selector region between a pair of electrodes. The selector region contains silicon doped with one or more of nitrogen, oxygen, germanium and carbon.
Micron Technology, Inc.


08/20/15
20150236157 

Transistor strain-inducing scheme


A transistor device includes a gate structure disposed over a channel region of a semiconductor substrate. A source/drain recess is arranged in the semiconductor substrate alongside the gate structure.
Taiwan Semiconductor Manufacturing Co., Ltd.


08/20/15
20150236125 

Semiconductor device and manufacturing method thereof


A method of manufacturing a semiconductor device is provided. The method includes forming a plurality of trenches in a semiconductor substrate, on opposite sides of a gate electrode of a p-type metal-oxide-semiconductor (pmos) disposed on the semiconductor substrate.
Semiconductor Manufacturing International (shanghai) Corporation


08/20/15
20150236117 

Reduced variation mosfet using a drain-extension-last process


A mosfet structure and method of manufacture that minimize threshold variations associated with statistical uncertainties of implanted source and drain extensions. The source and drain extensions are fabricated very late in the process using a material added to etched recesses immediately adjacent to the transistor's channel.
Semi Solutions Llc


08/20/15
20150236115 

Low temperature spacer for advanced semiconductor devices


Embodiments of the present invention provide semiconductor structures and methods for making the same that include a boron nitride (bn) spacer on a gate stack, such as a gate stack of a planar fet or finfet. The boron nitride spacer is fabricated using atomic layer deposition (ald) and/or plasma enhanced atomic layer deposition (peald) techniques to produce a boron nitride spacer at relatively low temperatures that are conducive to devices made from materials such as silicon (si), silicon germanium (sige), germanium (ge), and/or iii-v compounds.
International Business Machines Corporation


08/20/15
20150236021 

Structure to enhance gate induced strain effect in multigate devices


A finfet device structure provided with a thin layer of polycrystalline silicon having stress containing material, including a high ge percentage silicon germanium film and/or a high stress w film on top of a polycrystalline silicon film. Space between the fins enables the stressor films to be positioned closer to the transistor channel.
International Business Machines Corporation


08/20/15
20150236016 

Contact structure of semiconductor device


A method of fabricating a semiconductor device comprises forming a fin structure extending from a substrate, the fin structure comprising a first fin, a second fin, and a third fin between the first fin and the second fin. The method further comprises forming germanide over a first facet of the first fin, a second facet of the second fin, and a substantially planar surface of the third fin, wherein the first facet forms a first acute angle with a major surface of the substrate and is substantially mirror symmetric with the second facet, and wherein the substantially planar surface of the third fin forms a second acute angle smaller than the first acute angle with the major surface of the substrate..
Taiwan Semiconductor Manufacturing Company, Ltd.


08/20/15
20150230478 

Endophytic microbial symbionts in plant prenatal care


The present disclosure provides compositions comprising novel endophytes capable of promoting germination endophytes that have a symbiotic relationship with plants. The present disclosure further provides methods of improving seed vitality, biotic and abiotic stress resistance, plant health and yield under both stressed and unstressed environmental conditions, comprising inoculating a seed with the novel endophyte strains and cultivating a plant therefrom..
University Of Saskatchewan


08/20/15
20150230462 

Methods for improving germination and stress tolerance characteristics with jasmonates


Methods of seed treatment with one or more jasmonates are described. One method comprises exposing a seed to a formulation containing methyl dihydrojasmonate (mdhj) at an amount and duration effective for improving a germination characteristic of the seed.
New Biology, Inc.


08/20/15
20150230395 

Biodegrading mulching film seed attachment automating device having cutting open and adhesive coating means, and seed attachment method using said device


The present invention concerns a biodegrading mulching film seed attachment automating device having a cutting open and adhesive coating means, and a seed attachment method using said device. More specifically, the present invention relates to a biodegrading mulching film seed attachment automating device having a cutting open and adhesive coating means, the device comprising: an unwinder which winds the mulching film so as to store same in the form of a roll; a moving means for moving the mulching film, which has been wound on the unwinder, to a working area; a cutting open and adhesive coating means which is provided in the working area, forms a plurality of germination slits of specific length in the mulching film that has been moved to the working area, and, at the same time, coats an adhesive onto the mulching film in which the germination slits have been formed; a seed attachment means which attaches seeds in positions where the adhesive has been coated; a re-winder which winds the mulching film, to which the seeds have been attached, so as to store same in the form of a roll; and a control unit which controls the unwinder, the moving means, the cutting open and adhesive coating means, the seed attachment means and the re-winder..
Green & Seed Corp.


08/13/15
20150228971 

Positive active material, positive electrode and lithium battery including the positive active material, and manufacturing the positive active material


In formula 1, m comprises at least one selected from aluminum (al), titanium (ti), scandium (sc), vanadium (v), yttrium (y), niobium (nb), hafnium (hf), tantalum (ta), silicon (si), gallium (ga), and germanium (ge), and −1≦a≦1, 0≦b≦2, 0≦c≦2, 0≦d≦2, and 0≦e≦1.. .

08/13/15
20150228894 

Low temperature deposition for silicon-based conductive film


Providing for low temperature deposition of silicon-based electrical conductor for solid state memory is described herein. In various disclosed embodiments, the silicon-based conductor can form an electrode of a memory cell, an interconnect between conductive components of an electronic device, a conductive via, a wire, and so forth.
Crossbar, Inc.


08/13/15
20150228826 

Semiconductor gamma ray detector element configuration of axially series multi-chamber structure for improving detector depletion plan


A high purity germanium (hpge) radiation detector has been specially machined to be this invented series multi-chamber coaxial configuration. So extra-large volume hpge detectors can be easily produced with current available hpge crystal, and the entire detector body structure can be uniquely optimized in accordance with the exact semiconductor crystal ingot situation so the overall detector can be easier depleted and the photo-induced carriers can be better collected as the signal output.

08/13/15
20150228765 

Method of finfet formation


A method of fabricating a fin for a finfet device includes providing a semiconductor substrate, forming a patterned silicon germanium layer on the semiconductor substrate, epitaxially growing a silicon layer on a top surface and sidewalls of the patterned silicon germanium layer, forming a sacrificial layer covering the patterned silicon germanium layer, and removing the sacrificial layer and a portion of the silicon layer disposed on the top surface of the patterned silicon germanium layer until a top surface of the sacrificial layer is co-planar with the top surface of the patterned silicon germanium layer. The method further includes removing the patterned silicon germanium layer and removing the sacrificial layer to form the fin.
Semiconductor Manufacturing International (shanghai) Corporation


08/13/15
20150228755 

Integrated circuits with relaxed silicon / germanium fins


Integrated circuits with relaxed silicon and germanium fins and methods for fabricating such integrated circuits are provided. The method includes a forming a crystalline silicon and germanium composite layer overlying a crystalline silicon substrate, where a composite layer crystal lattice is relaxed.
Globalfoundries, Inc.


08/13/15
20150228724 

Modulating germanium percentage in mos devices


An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage.

08/13/15
20150228653 

Sige and si finfet structures and methods for making the same


Finfet structures and methods for making the same. A method includes: creating a plurality of silicon fins on a first region of a substrate, creating a plurality of silicon-germanium fins on a second region of the substrate, adjusting a silicon fin pitch of the plurality of silicon fins to a predetermined value, and adjusting a silicon-germanium fin pitch of the plurality of silicon-germanium fins to a predetermined value, where the creating steps are performed in a manner that silicon material and silicon-germanium material used in making the plurality of fins will be on the semiconductor structure at a same time..
International Business Machines Corporation


08/13/15
20150228652 

Semiconductor device including nanowire transistors with hybrid channels


A semiconductor device is provided that includes an n-type field effect transistor including a plurality of vertically stacked silicon-containing nanowires located in one region of a semiconductor substrate, and a p-type field effect transistor including a plurality of vertically stacked silicon germanium alloy nanowires located in another region of a semiconductor substrate. Each vertically stacked silicon-containing nanowire of the n-type field effect transistor has a different shape than the shape of each vertically stacked silicon germanium alloy nanowire of the p-type field effect transistor..
International Business Machines Corporation


08/13/15
20150228501 

Silicon germanium-on-insulator formation by thermal mixing


A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent formation of a silicon germanium-on-insulator material..
International Business Machines Corporation


08/13/15
20150228492 

Semiconductor structure having film including germanium oxide on germanium layer and fabricating the same


A semiconductor structure includes: a germanium layer 30; and an insulating film that has a film 32 that includes a germanium oxide and is formed on the germanium layer and a high dielectric oxide film 34 that is formed on the film including the germanium oxide and has a dielectric constant higher than that of a silicon oxide, wherein: an eot of the insulating film is 2 nm or less; and on a presumption that an au acting as a metal film is formed on the insulating film, a leak current density is 10−5×eot+4 a/cm2 or less in a case where a voltage of the metal film with respect to the germanium layer is applied from a flat band voltage to an accumulation region side by 1 v.. .
Japan Science And Technology Agency


08/13/15
20150228485 

Methods and systems for dopant activation using microwave radiation


A semiconductor structure includes a substrate and a source/drain (s/d) junction. The s/d junction is associated with the substrate and includes a semiconductor material.
Taiwan Semiconductor Manufacturing Company Limited


08/13/15
20150228483 

Method of forming mosfet structure


A method of forming a mosfet structure is provided. In the method, an epitaxial layer is formed.
Taiwan Semiconductor Manufacturing Company Limited


08/13/15
20150225812 

Method for concentrating metal compound


To concentrate metals such as gallium from ore which is extracted from mines or used electronic components while suppressing the quantity of waste liquid generated is difficult. A first solid metal compound which contains a metal selected from a group consisting of gallium, indium, germanium, tellurium, and cesium at a first metal content in a mixture of the first solid metal compound is reduced to form a gaseous metal compound, the gaseous metal compound is oxidized to form a second solid metal compound, and the second solid metal compound is collected at a second metal content which is higher than the first metal content..
Hosei University


08/13/15
20150225378 

Homopiperony lamine compound and use thereof


Wherein definitions of substituents in the formula are as shown in the specification. The compound shown as the general formula i has broad-spectrum bactericidal and insecticidal activity in the field of agriculture.

08/13/15
20150224232 

Medical material for long-term in vivo implantation use which is made from ultrafine fiber


A medical material for in vivo implantation use, characterized in that a polyethylene terephthalate ultrafine fiber is provided in at least a part of the medical material, wherein the polyethylene terephthalate ultrafine fiber is produced by spinning a polyethylene terephthalate chip, which is produced using germanium or titanium oxide as a catalyst, by a direct spinning method and then stretching the spun product and has a single fiber fineness of 0.8 dtex or less.. .
Nicem Ltd.


08/06/15
20150222093 

Optical devices including resonant cavity structures


An electro-optical device includes: (1) a first electrode layer; (2) a second electrode layer; and (3) a middle layer disposed between the first electrode layer and the second electrode layer. The middle layer includes a material having the formula: [aabbxxx′x′x″x″], where a is selected from potassium, rubidium, and cesium; b is selected from germanium, tin, and lead; x, x′, and x″ are independently selected from fluorine, chlorine, bromine, and iodine; a is in the range of 1 to 9; b is in the range of 1 to 5; a sum of x, x′, and x″ is in the range of 1 to 9; and the material is at least one of n-doped and p-doped..
Omnipv, Inc.


08/06/15
20150222081 

Walk-off compensator with tilt function


Techniques and structure are disclosed for implementing a spatial walk-off compensation mechanism having an integral tilt function. In some embodiments, the mechanism may comprise a tilt-ball mount having an integrated walk-off compensation medium.
Bae Systems Information And Electronic Systems Integration Inc.


08/06/15
20150222080 

Walk-off compensator with tilt function


Techniques and structure are disclosed for implementing a spatial walk-off compensation mechanism having an integral tilt function. In some embodiments, the mechanism may comprise a tilt-ball mount having an integrated walk-off compensation medium.
Bae Systems Information And Electronic Systems Integration Inc.


08/06/15
20150219773 

High purity germanium detector


The present disclosure provides a high-purity germanium (hpge) detector, comprising: a hpge single crystal having an intrinsic region exposed surface; a first electrode and a second electrode connected to a first contact electrode and a second contact electrode of the hpge single crystal respectively; and a conductive guard ring arranged in the intrinsic region exposed surface around the first electrode to separate the intrinsic region exposed surface into an inner region and an outer region. A leakage current derived from the intrinsic region exposed surface of the hpge detector can be separated from the current of the hpge detector by the conductive guard ring provided in the surface, thereby suppressing the interference of the surface leakage current..
Nuctech Company Limited




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Germ topics: Semiconductor, Transistors, Semiconductor Material, Ion Source, Optical Fiber, Photodiode, Electrical Signal, Level Shift, Source Follower, Transimpedance Amplifier, Movable Barrier, Prophylactic, Immunoglobulin, Immunoglobulins, Evaporator

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