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Germ patents



      

This page is updated frequently with new Germ-related patent applications.




Date/App# patent app List of recent Germ-related patents
07/21/16
20160211649 
 Tensile strained semiconductor photon emission and detection devices and integrated photonics system patent thumbnailTensile strained semiconductor photon emission and detection devices and integrated photonics system
Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions.
Acorn Technologies, Inc.


07/21/16
20160211346 
 Epitaxial channel transistors and die with diffusion doped channels patent thumbnailEpitaxial channel transistors and die with diffusion doped channels
Semiconductor structures can be fabricated by implanting a screen layer into a substrate, with the screen layer formed at least in part from a low diffusion dopant species. An epitaxial channel of silicon or silicon germanium is formed above the screen layer, and the same or different dopant species is diffused from the screen layer into the epitaxial channel layer to form a slightly depleted channel (sdc) transistor.
Mie Fujitsu Semiconductor Limited


07/21/16
20160211328 
 Complementary metal-oxide silicon having silicon and silicon germanium channels patent thumbnailComplementary metal-oxide silicon having silicon and silicon germanium channels
A silicon germanium on insulator (sgoi) wafer having nfet and pfet regions is accessed, the sgoi wafer having a silicon germanium (sige) layer having a first germanium (ge) concentration, and a first oxide layer over nfet and pfet and removing the first oxide layer over the pfet. Then, increasing the first ge concentration in the sige layer in the pfet to a second ge concentration and removing the first oxide layer over the nfet.
International Business Machines Corporation


07/21/16
20160211327 
 Complementary metal-oxide silicon having silicon and silicon germanium channels patent thumbnailComplementary metal-oxide silicon having silicon and silicon germanium channels
A silicon germanium on insulator (sgoi) wafer having nfet and pfet regions is accessed, the sgoi wafer having a silicon germanium (sige) layer having a first germanium (ge) concentration, and a first oxide layer over nfet and pfet and removing the first oxide layer over the pfet. Then, increasing the first ge concentration in the sige layer in the pfet to a second ge concentration and removing the first oxide layer over the nfet.
International Business Machines Corporation


07/21/16
20160211265 
 Single source/drain epitaxy for co-integrating nfet semiconductor fins and pfet semiconductor fins patent thumbnailSingle source/drain epitaxy for co-integrating nfet semiconductor fins and pfet semiconductor fins
A plurality of gate structures are formed straddling nfet semiconductor fins and pfet semiconductor fins which extend upwards from a surface of a semiconductor substrate. A boron-doped silicon germanium alloy material is epitaxially grown from exposed surfaces of both the nfet semiconductor fins and the pfet semiconductor fins not protected by the gate structures.
International Business Machines Corporation


07/21/16
20160208411 
 N-type sic single crystal and  its production patent thumbnailN-type sic single crystal and its production
A n-type sic single crystal with low resistivity and low threading dislocation density is provided, which is achieved by a n-type sic single crystal containing germanium and nitrogen, wherein the density ratio of the germanium and the nitrogen [ge/n] satisfies the relationship 0.17<[ge/n]<1.60.. .
Toyota Jidosha Kabushiki Kaisha


07/21/16
20160208327 
 Systems and methods for determining impact of age related changes in sperm epigenome on offspring phenotype patent thumbnailSystems and methods for determining impact of age related changes in sperm epigenome on offspring phenotype
Methods, systems, and diagnostic tests, including test kits for assessing an offspring's risk of developing a disease or condition known or suspected to have a causal or contributing relationship to an age related epigenetic event in a paternal germ line are disclosed and described. .

07/21/16
20160206863 
 Method and apparatus using music therapy or resonant book to remove asbestos and mercury from the human body patent thumbnailMethod and apparatus using music therapy or resonant book to remove asbestos and mercury from the human body
A method and apparatus using a music therapy or a resonant book to remove or excrete asbestos from the human body is described. The music therapy comprises a set of one or more vibrational energy songs.

07/21/16
20160205951 
 Processes for making sprouted whole grains and products comprising sprouted whole grains patent thumbnailProcesses for making sprouted whole grains and products comprising sprouted whole grains
Disclosed herein is a process for producing a sprouted grain comprising steeping at least one grain at a temperature from about 2° c. To about 29° c.
Cargill, Incorporated


07/14/16
20160204298 
 Integrated avalanche germanium photodetector patent thumbnailIntegrated avalanche germanium photodetector
An integrated avalanche photodetector and a method for fabrication thereof. The integrated avalanche photodetector comprises a ge body adapted to conduct an optical mode.
Universiteit Gent


07/14/16
20160204290 

Buffer layer for high performing and low light degraded solar cells


Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material.
International Business Machines Corporation


07/14/16
20160204256 

Methods of forming dislocation enhanced strain in nmos structures


Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material.

07/14/16
20160204199 

Mosfet structure and manufacturing method thereof


A mosfet structure and a method for manufacturing the same are disclosed. The method comprises: a.
Institute Of Microelectronics, Chinese Academy Of Sciences


07/14/16
20160204198 

High mobility transistors


An integrated circuit containing an n-channel finfet and a p-channel finfet has a dielectric layer over a silicon substrate. The fins of the finfets have semiconductor materials with higher mobilities than silicon.
Texas Instruments Incorporated


07/14/16
20160204131 

Strain release in pfet regions


A method for fabricating a semiconductor device, includes providing a strained silicon on insulator (ssoi) structure, the ssoi structure comprises, a dielectric layer disposed on a substrate, a silicon germanium layer disposed on the dielectric layer, and a strained semiconductor material layer disposed directly on the silicon germanium layer, forming a plurality of fins on the ssoi structure, forming a gate structure over a portion of at least one fin in a nfet region, forming a gate structure over a portion of at least one fin in a pfet region, removing the gate structure over the portion of the at least one fin in the pfet region, removing the silicon germanium layer exposed by the removing, and forming a new gate structure over the portion of the at least one fin in the pfet region, such that the new gate structure surrounds the portion on all four sides.. .
International Business Machines Corporation


07/14/16
20160201222 

Magnetooptical material, manufacturing method therefor, and magnetooptical device


(in formula (1), r represents one or more elements selected from among the group consisting of silicon, germanium, titanium, tantalum, tin, hafnium, and zirconium (but not silicon only, germanium only, or tantalum only).). .

07/14/16
20160201006 

Methods for obtaining corn oil from milled corn germ


Methods for obtaining corn oil from milled corn germ (e.g., dry milled corn germ), involving adding water, at least one acidic cellulase, at least one acidic protease, and at least one phytase to milled corn germ to obtain corn oil.. .
Dupont Industrial Bioscience


07/14/16
20160200341 

Transportable and washable sanitary cover for a shopping cart handle


The present sanitary handle cover relates to a shopping cart, pushcart, or stroller handle cover that prevents the passage of germs bacteria, dirt, bodily fluids, infectious agents, disease organisms, contaminants, or particles of debris from previous users to new users; additionally, the cover is able to be detached from a handle, folded for size reduction and storage, easily transported, and does not cross-contaminate itself during storage or transport.. .

07/14/16
20160199423 

Compositions and methods


Disclosed herein are therapeutic compositions containing non-pathogenic, germination-competent bacterial spores, for the prevention, control, and treatment of gastrointestinal diseases, disorders and conditions and for general nutritional health.. .
Seres Therapeutics, Inc.


07/14/16
20160198654 

Growth of cryo-sprouts


The present description relates to cryo-sprouts that have been germinated, grown and shipped in the same container. Seeds are placed on a membrane in the container with sufficient water.
The Vista Institute Llc


07/07/16
20160197274 

Thin film transistor and manufacturing method thereof, array substrate, display device


A thin film transistor and manufacturing method thereof, an array substrate and a display device are provided. In the manufacturing method of the thin film transistor, manufacturing an active layer includes: forming a germanium thin film, and forming pattern of the active layer through a patterning process; conducting a topological treatment on the germanium thin film with a functionalized element, so as to obtain the active layer (4) with topological semiconductor characteristics.
Boe Technology Group Co., Ltd.


07/07/16
20160197189 

Method to controllably etch silicon recess for ultra shallow junctions


A method of forming a semiconductor device that includes forming a germanium including material on source and drain region portions of a silicon containing fin structure, and annealing to drive germanium into the source and drain region portions of the fin structure. The alloyed portions of fin structures composed of silicon and germanium are then removed using a selective etch.
International Business Machines Corporation


07/07/16
20160197187 

Method to controllably etch silicon recess for ultra shallow junctions


A method of forming a semiconductor device that includes forming a germanium including material on source and drain region portions of a silicon containing fin structure, and annealing to drive germanium into the source and drain region portions of the fin structure. The alloyed portions of fin structures composed of silicon and germanium are then removed using a selective etch.
International Business Machines Corporation


07/07/16
20160197147 

High germanium content silicon germanium fins


Thermal condensation is employed to obtain a finned structure including strained silicon germanium fins having vertical side walls and a germanium content that may be high relative to silicon. A hard mask is used directly on a low-germanium content silicon germanium layer.
International Business Machines Corporation


07/07/16
20160197111 

Integrated photonics including germanium


A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride..
The Research Foundation For The State University Of New York


07/07/16
20160197018 

Integrated circuit comprising pmos transistors with different voltage thresholds


There is provided a method for the manufacture of an integrated circuit, including a substrate and an insulating layer formed on the substrate; a first pmos transistor formed on the insulating layer and including a channel formed in a first layer of a silicon-germanium alloy, having a first thickness and first average germanium density; a gate oxide layer having a first equivalent oxide thickness; a second pmos transistor formed on the insulating layer and further including a channel formed in a second layer of a silicon-germanium alloy, having a second thickness which is greater than the first and a second average germanium density which is lower than the first; and a gate oxide layer having a second equivalent oxide thickness which is greater than the first.. .
International Business Machines Corporation


07/07/16
20160196984 

Isotropic atomic layer etch for silicon and germanium oxides


Methods for controlled isotropic etching of layers of silicon oxide and germanium oxide with atomic scale fidelity are provided. The methods make use of a reaction of anhydrous hf with an activated surface of an oxide, with an emphasis on removal of water generated in the reaction.
Lam Research Corporation


07/07/16
20160196969 

Isotropic atomic layer etch for silicon oxides using no activation


Methods for controlled isotropic etching of layers of silicon oxide and germanium oxide with atomic scale fidelity are provided. The methods make use of no activation of an oxide surface.
Lam Research Corporation


07/07/16
20160194627 

Combinatorial antibody libraries and uses thereof


Methods for making a combinatorial antibody library from human germline segments are provided. Also provided are libraries of nucleic acid molecules compiled from germline segments encoding vl chains and libraries of nucleic acid molecules encoding vh chains, and resulting antibody libraries.
Fabrus, Inc.


07/07/16
20160193378 

Ophthalmic lens disinfecting base


The present invention provides for a disinfecting radiation base with a germicidal bulb for providing disinfecting radiation to a storage case for an ophthalmic lens, such as a contact lens. The disinfecting radiation base provides disinfecting radiation for disinfecting a contact lens.
Johnson & Johnson Vision Care, Inc.


07/07/16
20160193263 

Reaction platform and making pollen based materials in combination with beeswax and uses thereof


A two stage reaction platform is provided to produce a pollen-based extract material, comprising the steps of a first stage including: opening and/or germinating pollen grains, reacting the treated pollen grains with one or more beehive components, selected from beeswax, honey, or enzyme-containing material, and stirring to form a jelly; and a second stage including heating the jelly in a closed container to product an extract. The extract may be a fermented extract.
Decima Health Limited


07/07/16
20160192606 

Hydroponic plant kit


A self-contained hydroponic plant system which can be easily packaged as a kit containing a plurality of plant seeds, at least one plant cube for holding seedlings within, a germination tray to allow the plant cubes having seeds within to germinate, a vertically collapsible reservoir for holding water and nutrients therein having an open top end and a sealed bottom end, a solar powered aerator for circulating oxygen to the water in the reservoir through a flexible hose, and a net pot supported by the top end of the reservoir having a slotted bottom wall for supporting the plant cups with germinated seedlings within, whereby the plant's roots grow and access the plant nutrients within the aerated water-filled reservoir. The kit further includes a media to support/stabilize the plant cup within the net pot, a frame assembly sized to hold the reservoir, and support hangers to suspend the frame assembly and reservoir..
Innovations World Wide, Llc


06/30/16
20160192502 

Germanium oxide pre-clean module and process


In some embodiments, a method for integrated circuit fabrication includes removing oxide material from a surface of a substrate, where the surface includes silicon and germanium. Removing the oxide material includes depositing a halogen-containing pre-clean material on a silicon oxide-containing surface and sublimating a portion of the halogen-containing pre-clean material to expose the silicon on the surface.

06/30/16
20160192301 

Beacons for wireless communication


A system and method for wireless devices to efficiently receive communications by transmitting and receiving specialized beacon messages. Particularly, a wireless device may await reception of a synchronizing beacon message from a transmitting device.

06/30/16
20160190600 

Interconnected hollow nanostructures containing high capacity active materials for use in rechargeable batteries


Provided are electrode layers for use in rechargeable batteries, such as lithium ion batteries, and related fabrication techniques. These electrode layers have interconnected hollow nanostructures that contain high capacity electrochemically active materials, such as silicon, tin, and germanium.

06/30/16
20160190317 

Hetero-channel finfet


A hetero-channel finfet device provides enhanced switching performance over a finfet device having a silicon channel, and is easier to integrate into a fabrication process than is a finfet device having a germanium channel. A finfet device featuring the heterogeneous si/sige channel includes a fin having a central region made of silicon and sidewall regions made of sige.

06/30/16
20160190303 

Silicon germanium-on-insulator finfet


A method of making a structurally stable sige-on-insulator finfet employs a silicon nitride liner to prevent de-stabilizing oxidation at the base of a sige fin. The silicon nitride liner blocks access of oxygen to the lower corners of the fin to facilitate fabrication of a high-concentration sige fin.

06/30/16
20160190286 

Surface passivation for germanium-based semiconductor structure


The present disclosure provides a method forming a semiconductor device in accordance with some embodiments. The method includes receiving a substrate having a fin protruding through the substrate, wherein the fin is formed of a first semiconductor material, exposing the substrate in an environment including hydrogen radicals, thereby passivating the protruded fin using the hydrogen radicals, and epitaxially growing a cap layer of a second semiconductor material to cover the protruded fin..

06/30/16
20160190168 

Silicon-germanium fin formation


Forming a set of semiconductor fins is disclosed. Forming the set of semiconductor fins can include forming a base structure including a silicon substrate, an insulator layer stacked on the silicon substrate, and a plurality of silicon semiconductor fins each stacked directly on the insulator layer.

06/30/16
20160189958 

Heteroepitaxial growth of ge-sn alloys


Heteroepitaxial methods are described herein for the growth of germanium-tin alloy layers directly on silicon substrates. A method of heteroeptiaxial growth of a germanium-tin alloy layer comprises placing a silicon substrate in a cold wall ultra-high vacuum chemcial vapor deposition chamber and depositing the germanium-tin alloy layer directly on the silicon substrate from a gaseous mixture in the deposition chamber, the gaseous mixture comprising a germanium source and a tin source..

06/30/16
20160189880 

Electrode plate, manufacturing method thereof, and energy storage device


An electrode plate, a manufacturing method thereof, and an energy storage device are disclosed. The method for manufacturing an electrode plate includes: forming a germanium film on a metal substrate; carrying out a topology treatment on the germanium film by using a functionalization element, to obtain the electrode plate with a topological semiconductor characteristic.

06/30/16
20160185825 

Engineered outer domain (eod) of hiv gp120 and mutants thereof


The invention relates to an engineered outer domain (eod) of hiv gp120 and mutants thereof and methods of making and using the same. The mutant eods may be advantageous for the elicitation of cd4-binding site (cd4bs)-directed broadly-neutralizing antibodies (bnabs) and/or improve binding to mature vrc01 and/or improve binding to germline vrc01 and the germlines of other vh1-2 derived broadly-neutralizing antibodies.

06/30/16
20160184370 

Compositions and methods


Disclosed herein are therapeutic compositions containing non-pathogenic, germination-competent bacterial spores, for the prevention, control, and treatment of gastrointestinal diseases, disorders and conditions and for general nutritional health.. .

06/30/16
20160184347 

Medicine for preventing or suppressing engraftment of cancer cells including an organic acid polymer as active ingredient


Pharmaceutical uses of an organic acid polymer, specifically a 3-oxygermylpropionic acid polymer.. .

06/23/16
20160181598 

Negative active material and lithium battery including negative active material


A negative active material includes a silicon-based alloy, wherein the silicon-based alloy includes silicon (si); a first metal (m1) selected from titanium (ti), vanadium (v), chromium (cr), iron (fe), cobalt (co), nickel (ni), copper (cu), zinc (zn), gallium (ga), and germanium (ge), and at least one additional element (a), which is included in the silicon-based alloy and on a surface of silicon-based alloy, selected from carbon (c), boron (b), sodium (na), nitrogen (n), phosphorous (p), sulfur (s), and chlorine (cl), and the silicon-based alloy has an internal porosity of about 35% or less. A lithium battery including the negative active material may have improved lifespan characteristics..

06/23/16
20160181521 

Variable resistance material layers and variable resistance memory devices including the same


A variable resistance material layer including germanium (ge), antimony (sb), tellurium (te), and at least one type of impurities x. The variable resistance material layer having a composition represented by a chemical formula of xp(geasb(1-a-b)teb)(1-p), wherein an atomic concentration of the impurities x is in a range of 0<p≦0.2, an atomic concentration of ge is in a range of 0.05≦a<0.19, and an atomic concentration of te is in a range of 0.42≦b≦0.56..

06/23/16
20160181515 

Embedded phase change memory devices and related methods


A method for making an integrated circuit (ic) including embedded phase change memory (pcm) may include forming an array of heating elements above a substrate including processing circuitry thereon, and forming a respective pcm chalcogenide glass layer above each heating element. This may be done by forming a tellurium-rich, germanium-antimony-tellurium (gst) layer above the heating element, and forming a germanium-rich gst layer above the tellurium-rich gst layer.

06/23/16
20160181403 

Finfets and methods for forming the same


A finfet includes a semiconductor fin including an inner region, and a germanium-doped layer on a top surface and sidewall surfaces of the inner region. The germanium-doped layer has a higher germanium concentration than the inner region.

06/23/16
20160181395 

Finfet device having a high germanium content fin structure and making same


A fin of silicon-germanium material is formed and covered with an epitaxially grown layer of silicon material. A dummy transistor gate is then formed to extend over a channel of the fin.

06/23/16
20160181105 

Silicon-germanium (sige) fin formation


Constructing an sige fin by: (i) providing an intermediate sub-assembly including a silicon-containing base layer and a silicon-containing first fin structure extending in an upwards direction from the base layer; (ii) refining the sub-assembly by covering at least a portion of the top surface of the base layer and at least a portion of the first and second lateral surfaces of the first fin structure with a pre-thermal-oxidation layer that includes silicon-germanium (sige); and (iii) further refining the sub-assembly by thermally oxidizing the pre-thermal oxidation layer to migrate ge content from the pre-thermal-oxidation layer into at least a portion of the base layer and at least a portion of first fin structure.. .

06/23/16
20160181099 

Methods and structures to prevent sidewall defects during selective epitaxy


Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type iii-v or germanium (ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls.

06/23/16
20160181096 

Method for growing germanium epitaxial films


A method for growing germanium epitaxial films is disclosed. Initially, a silicon substrate is preconditioned with hydrogen gas.

06/23/16
20160181095 

Silicon-germanium fin of height above critical thickness


Embodiments of the invention include a method for fabricating a sige fin and the resulting structure. A soi substrate is provided, including at least a silicon layer on top of a box.

06/23/16
20160181087 

Particle removal with minimal etching of silicon-germanium


Particle-clean formulations and methods for semiconductor substrates use aqueous solutions of tetraethylammonium hydroxide (“teah,” c8h21no) with or without hydrogen peroxide (h2o2). The solution ph ranges from 8-12.5.

06/23/16
20160175475 

Ultraviolet light germicidal sanitizing system ulitilizing various room sanitizing modes


An ultraviolet (uv) light germicidal sanitizing system for use in an enclosed space comprises a room occupancy sensor, a door sensor, a uv light generating unit, and a control software application. The room occupancy sensor is positioned in the enclosed space and generates a first signal indicating that the enclosed space is either occupied or unoccupied.

06/23/16
20160174570 

Endophytic microbial symbionts in plant prenatal care


The present disclosure provides compositions comprising novel endophytes capable of promoting germination endophytes that have a symbiotic relationship with plants. The present disclosure further provides methods of improving seed vitality, biotic and abiotic stress resistance, plant health and yield under both stressed and unstressed environmental conditions, comprising inoculating a seed with the novel endophyte strains and cultivating a plant therefrom..

06/23/16
20160174566 

Methods, formulations, and kits for bacterial degradation


Methodologies, formulations, and kits suitable for decontaminating environments containing bacterial spores by degrading the spores. Formulations contain papain, at least one germinant, and optionally one or more additional enzymes.

06/23/16
20160174502 

Buglossoides 'fitzroy'


A new and distinct buglossoides arvensis plant named ‘fitzroy’ characterized by vigorous plant growth and abundant side shoot development. Seeds are distinctively well retained on the plant.

06/23/16
20160174456 

Method and estimating a seed germination ability


A apparatus and method for estimating a germination ability of a seed comprises a terahertz signal source for emitting a terahertz signal towards the seed, a detector for detecting at least part of the terahertz signal having interacted with the seed, a scanner for moving the support relative to the terahertz signal to provide a scan of the seed, a data processing device for forming an image data from the detected terahertz signal as obtained for a plurality of positions during the scan of the seed, and a decision support system for providing an estimate of the germination ability from the image data. In an embodiment, the terahertz signal source is arranged for emitting a continuous or pulse wave signal, and wherein the detector is arranged for detecting an amplitude and a phase of the terahertz signal having interacted with the seed.



Germ topics: Semiconductor, Transistors, Semiconductor Material, Ion Source, Optical Fiber, Photodiode, Electrical Signal, Level Shift, Source Follower, Transimpedance Amplifier, Movable Barrier, Prophylactic, Immunoglobulin, Immunoglobulins, Evaporator

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