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Germ-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Source and drain stressors with recessed top surfaces
Taiwan Semiconductor Manufacturing Company, Ltd.
January 11, 2018 - N°20180012997

An integrated circuit structure includes a gate stack over a semiconductor substrate, and a silicon germanium region extending into the semiconductor substrate and adjacent to the gate stack. The silicon germanium region has a top surface, with a center portion of the top surface recessed from edge portions of the top surface to form a recess. The edge portions are ...
Germanium-silicon light sensing apparatus
Artilux Corporation
January 11, 2018 - N°20180012918

A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon ...
Germanium-silicon light sensing apparatus
Artilux Corporation
January 11, 2018 - N°20180012917

A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including growing a germanium-silicon layer on a semiconductor donor wafer; defining pixels of the image sensor array on the germanium-silicon layer; defining a first interconnect ...
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Semiconductor structure with self-aligned wells and multiple channel materials
Globalfoudries Inc.
January 11, 2018 - N°20180012805

Embodiments of the present invention provide a semiconductor structure having a strain relaxed buffer, and method of fabrication. A strain relaxed buffer is disposed on a semiconductor substrate. A silicon region and silicon germanium region are disposed adjacent to each other on the strain relaxed buffer. An additional region of silicon or silicon germanium provides quantum well isolation.
Method for preparing a nanometric zeolite y
Ifp Energies Nouvelles
January 11, 2018 - N°20180009670

Preparation of a fau-structural-type nanometric zeolite y having a crystal size of less than 100 nm and an si/al ratio that is greater than 2: mixing, in aqueous medium, of at least one ao2 source of at least one tetravalent element a that is silicon, germanium, and/or titanium, at least one bob source of at least one trivalent element b ...
Sanitizing apparatus support
Sanitizall Corp.
January 11, 2018 - N°20180008735

The present disclosure presents sanitization devices and methods. More particularly, the disclosure presents devices and methods that significantly reduce or eliminate the activity of germs, bacteria and/or other infectious microorganisms from a variety of objects. The disclosure describes a flexible support for holding and suspending objects in the sanitizing device which improves the level and intensity of the sanitization ...
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Vertical cmos devices with common gate stacks
International Business Machines Corporation
January 04, 2018 - N°20180005904

A semiconductor structure includes a first nanowire of a first material formed on a substrate, at least a second nanowire of a second material different than the first material formed on the substrate and a common gate stack surrounding the first nanowire and the second nanowire. The first nanowire and the second nanowire are vertical with respect to a horizontal ...
Preparation of silicon-germanium-on-insulator structures
Sunedison Semiconductor Limited (uen201334164h)
January 04, 2018 - N°20180005872

Donor structures having a germanium buffer layer for preparing silicon-germanium-on-insulator structures by layer transfer are disclosed. Bonded structures and methods for preparing silicon-germanium-on-insulator structures by a layer transfer method are also disclosed.
Cyclical deposition of germanium
Asm Ip Holding B.v.
January 04, 2018 - N°20180005823

In some aspects, methods for forming a germanium thin film using a cyclical deposition process are provided. In some embodiments, the germanium thin film is formed on a substrate in a reaction chamber, and the process includes one or more deposition cycles of alternately and sequentially contacting the substrate with a vapor phase germanium precursor and a nitrogen reactant. In ...
Methods, apparatuses, and systems for facilitating management and/or automation of direct mail campaigns and ...
Kleermail Corporation
January 04, 2018 - N°20180005336

Methods, apparatuses, and systems for facilitating and/or automating project specification, vendor/supplier selection, packaging/processing, and/or mailing for bulk or direct mail campaigns are described herein. Via computer-facilitated techniques, a project manager (or other authorized user) of a mail campaign electronically provides various project information (e. G., project type, design specifications and quantities of materials, mailing list(s), ...
Methods for sequence-directed molecular breeding
Monsanto Technology Llc
January 04, 2018 - N°20180004894

The present invention provides breeding methods and compositions to enhance the germplasm of a plant by the use of direct nucleic acid sequence information. The methods describe the identification and accumulation of preferred nucleic acid sequences in the germplasm of a breeding population of plants.
Purification of germ stem cells by targeting mrp9
President And Fellows Of Harvard College
January 04, 2018 - N°20180002662

Provided herein are methods and compositions for the purification and detection of germ stem cells (e. G., oogonial stem cells) based on expression of mrp9.
Method for fabricating metallic micro-nanostructures
Wuhan University
January 04, 2018 - N°20180001382

A method for fabricating metallic micro-nanostructures, the method including: 1) heating a metal and a micro-nanostructure mold to a temperature t, where the metal is a pure metal or an alloy thereof selected from indium (in), germanium (ge), tin (sn), bismuth (bi), lead (pb), zinc (zn), aluminum (al), copper (cu), gold (au), silver (ag), platinum (pt) and palladium (pd), t is ...
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Inhibiting germination of clostridium perfringens spores to reduce necrotic enteritis
Bio Agens Research And Development - Bard S.r.o.
January 04, 2018 - N°20180000793

Provided herein are materials and methods useful for reducing, preventing, and/or inhibiting germination of c. Perfringens spores, including methods for inhibiting c. Perfringens germination to reduce necrotizing enteritis (ne, also referred to as necrotic enteritis) in animals. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be ...
Method and system for feeding an animal a consumable feed product and vegetation from a ...
Purina Animal Nutrition Llc
January 04, 2018 - N°20180000051

Consumable feed products and vegetation are delivered to animals using a single container in which the container holds the feed product and is used to deliver the feed and which includes ungerminated seeds embedded in the container body. The seeds are caused to germinate and produce vegetation from the container body, and the germinated seeds and/or vegetation is fed ...
Enhanced mycelium growth medium and method
Functional Fungi, Llc
January 04, 2018 - N°20180000013

The invention is a method for enhanced growth of mycelium in culture including the key steps of seed blend choice from among corn, rice, quinoa, chia, canihua, cumin and flax seed, germinating the seed blend prior to inoculating the mycelium starter, and conducting the mushroom cultivation with orp enhanced water and particular transmissions of sound and particularly colored light. Mushrooms ...
Continuous ultrasonic treatment of seeds
Bkr Ip Holdco Llc
January 04, 2018 - N°20180000004

A process and an apparatus continuously treat seeds with ultrasonic transmission. The process includes mixing seeds with a flowable medium to create a flowable slurry of seeds; continuously moving the flowable slurry of seeds for a length of a flow pipe through a helical path within the flow pipe; and as the flowable slurry flows through the helical path within ...
Selective germanium p-contact metalization through trench
Intel Corporation
December 28, 2017 - N°20170373147

Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be implemented, for example, using a standard contact stack such as a series of metals on, for example, silicon or silicon germanium (sige) source/drain regions. In accordance with one example such embodiment, an intermediate boron doped germanium layer is provided ...
Integrated structures containing vertically-stacked memory cells
Micron Technology, Inc.
December 28, 2017 - N°20170373081

Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, and having vertically-stacked memory cells within the conductive levels. An opening extends through the stack. Channel material is within the opening and along the memory cells. At least some of the channel material contains germanium.
Method of making a fully depleted semiconductor-on-insulator programmable cell and structure thereof
Broadcom Corporation
December 28, 2017 - N°20170373074

A programmable cell includes a semiconductor-on-insulator substrate, a program gate, and a word line gate. The semiconductor-on-insulator substrate includes a semiconductor layer. The semiconductor layer includes a first doped source/drain region, a second doped source/drain region and a region comprising germanium. The program gate is disposed above the region comprising germanium and includes a first gate dielectric layer ...
Method and structure for finfet device
Taiwan Semiconductor Manufacturing Company, Ltd.
December 28, 2017 - N°20170373066

The present disclosure describes a fin-like field-effect transistor (finfet). The device includes one or more fin structures over a substrate, each with source/drain (s/d) features and a high-k/metal gate (hk/mg). A first hk/mg in a first gate region wraps over an upper portion of a first fin structure, the first fin structure including an epitaxial ...
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