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This page is updated frequently with new Germ-related patent applications. Subscribe to the Germ RSS feed to automatically get the update: related Germ RSS feeds. RSS updates for this page: Germ RSS RSS


Silicon-germanium heterojunction tunnel field effect transistor and preparation method thereof

Multi-junction iii-v solar cell

Multi-junction iii-v solar cell

Date/App# patent app List of recent Germ-related patents
07/17/14
20140200384
 Dehydrogenation manganese-containing catalyst, its use and method of preparation patent thumbnailnew patent Dehydrogenation manganese-containing catalyst, its use and method of preparation
A catalyst composition useful for the dehydrogenation of hydrocarbon comprises components (a)-(g). Component (a) is a catalyst substrate.
07/17/14
20140199841
 Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si1-xgex material in the presence of a cmp composition having a ph value of 3.0 to 5.5 patent thumbnailnew patent Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si1-xgex material in the presence of a cmp composition having a ph value of 3.0 to 5.5
A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si1-xgex material with 0.1≦x<1 in the presence of a chemical mechanical polishing (cmp) composition having a ph value in the range of from 3.0 to 5.5 and comprising: (a) inorganic particles, organic particles, or a mixture or composite thereof (b) at least one type of an oxidizing agent, and (c) an aqueous medium.. .
07/17/14
20140199825
 Silicon-germanium heterojunction tunnel field effect transistor and preparation method thereof patent thumbnailnew patent Silicon-germanium heterojunction tunnel field effect transistor and preparation method thereof
A silicon/germanium (sige) heterojunction tunnel field effect transistor (tfet) and a preparation method thereof are provided, in which a source region of a device is manufactured on a silicon germanium (sige) or ge region, and a drain region of the device is manufactured in a si region, thereby obtaining a high on-state current while ensuring a low off-state current. Local ge oxidization and concentration technique is used to implement a silicon germanium on insulator (sgoi) or germanium on insulator (goi) with a high ge content in some area.
07/17/14
20140199813
 Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation patent thumbnailnew patent Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation
Processes for making field effect transistors relax a buried stressor layer to induce strain in a silicon surface layer above the buried stressor layer. The buried stressor layer is relaxed and the surface layer is strained by implantation into at least the buried stressor layer, preferably on both sides of a portion of the surface layer that is to be stressed.
07/17/14
20140199614
 Composite, and electrode and fuel cell including the composite patent thumbnailnew patent Composite, and electrode and fuel cell including the composite
Wherein m1 is silicon (si), germanium (ge), molybdenum (mo), or a combination thereof, and 0≦x≦0.3 and 0≦y≦3; and a yttria-stabilized zirconia including cerium (ce), titanium (ti), or a combination thereof.. .
07/17/14
20140197507
 Buried waveguide photodetector patent thumbnailnew patent Buried waveguide photodetector
A method of forming an integrated photonic semiconductor structure having a photodetector and a cmos device may include forming the cmos device on a first silicon-on-insulator region, forming a silicon optical waveguide on a second silicon-on-insulator region, and forming a shallow trench isolation (sti) region surrounding the silicon optical waveguide such that the shallow trench isolation electrically isolating the first and second silicon-on-insulator region. Within a first region of the sti region, a first germanium material is deposited adjacent a first side wall of the semiconductor optical waveguide.
07/17/14
20140197458
 Finfet device and method of fabricating same patent thumbnailnew patent Finfet device and method of fabricating same
An integrated circuit structure includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate, wherein the isolation regions have opposite sidewalls facing each other. A fin structure includes a silicon fin higher than top surfaces of the isolation regions, a germanium-containing semiconductor region overlapped by the silicon fin, silicon oxide regions on opposite sides of the germanium-containing semiconductor region, and a germanium-containing semiconductor layer between and in contact with the silicon fin and one of the silicon oxide regions..
07/17/14
20140196774
 Multi-junction iii-v solar cell patent thumbnailnew patent Multi-junction iii-v solar cell
A multi junction solar cell structure includes a top photovoltaic cell including iii-v semiconductor materials and a silicon-based bottom photovoltaic cell. A thin, germanium-rich silicon germanium buffer layer is provided between the top and bottom cells.
07/17/14
20140196773
 Multi-junction iii-v solar cell patent thumbnailnew patent Multi-junction iii-v solar cell
A multi junction solar cell structure includes a top photovoltaic cell including iii-v semiconductor materials and a silicon-based bottom photovoltaic cell. A thin, germanium-rich silicon germanium buffer layer is provided between the top and bottom cells.
07/10/14
20140196167
 New sources of aphid resistance in soybean plants patent thumbnailNew sources of aphid resistance in soybean plants
The present invention relates to compositions and methods for identifying and using new germplasm providing aphid resistant in soybean plants, particularly for use in breeding soybean plant lines and cultivars representing specific set(s) of germplasm. In particular, aphid resistant soybean plants comprising new sources of germplasm and stacked germplasm/genes conferring enhanced aphid resistance are provided.
07/10/14
20140193912
Method for increasing the efficiency of inducing pluripotent stem cells
The present invention relates to a method for increasing the efficiency of inducing pluripotent stem cells by utilizing genes jhdm1a that modify histone. By utilizing jhdm1a, and a stem cell inducing factor, the present invention increases the efficiency of inducing pluripotent stem cells and increases the quality of induced pluripotent stem cells.
07/10/14
20140193831
Seed trait prediction by activity-based protein profiling
The present invention relates to a method of predicting a plant seed trait, such as germination rate, vigour, aging and priming, by determining the presence of a target protein, i.e. Diagnostic marker, in its active state in a protein sample derived from a plant seed or plant seed lot.
07/10/14
20140193551
Method of processing seeds to nutritionally enhance food
A method of processing seed to nutritionally enhance food where after seeds are sanitized, washing and hydrated, the seeds are allowed a period of germination before the seeds are dried and cooled.. .
07/10/14
20140193384
Use of lactobacillus for liver protection
A method for liver protection of a mammal is provided and includes administering an effective amount of isolated lactobacillus plantarum cmu995 thereto. Providing a new use of lactobacillus plantarum cmu995, which is deposited at the food industry research and development institute (firdi) in taiwan under accession number bcrc 910472 and in the german collection of microorganisms and cell cultures (dsmz) under accession number dsm 23780..
07/10/14
20140193321
Method for producing higher silanes
The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds.
07/10/14
20140191332
Pfet devices with different structures and performance characteristics
Disclosed herein is a device that includes a first pfet transistor formed in and above a first active region of a semiconducting substrate, a second pfet transistor formed in and above a second active region of the semiconducting substrate, wherein at least one of a thickness of the first and second channel semiconductor materials or a concentration of germanium in the first and second channel semiconductor materials are different.. .
07/10/14
20140191326
Photonics device and cmos device having a common gate
A semiconductor chip having a photonics device and a cmos device which includes a photonics device portion and a cmos device portion on a semiconductor chip; a metal or polysilicon gate on the cmos device portion, the metal or polysilicon gate having a gate extension that extends toward the photonics device portion; a germanium gate on the photonics device portion such that the germanium gate is coplanar with the metal or polysilicon gate, the germanium gate having a gate extension that extends toward the cmos device portion, the germanium gate extension and metal or polysilicon gate extension joined together to form a common gate; spacers formed on the germanium gate and the metal or polysilicon gate; and nitride encapsulation formed on the germanium gate.. .
07/10/14
20140191302
Photonics device and cmos device having a common gate
A semiconductor chip having a photonics device and a cmos device which includes a photonics device portion and a cmos device portion on a semiconductor chip; a metal or polysilicon gate on the cmos device portion, the metal or polysilicon gate having a gate extension that extends toward the photonics device portion; a germanium gate on the photonics device portion such that the germanium gate is coplanar with the metal or polysilicon gate, the germanium gate having a gate extension that extends toward the cmos device portion, the germanium gate extension and metal or polysilicon gate extension joined together to form a common gate; spacers formed on the germanium gate and the metal or polysilicon gate; and nitride encapsulation formed on the germanium gate. A method is also disclosed pertaining to fabricating the semiconductor chip..
07/10/14
20140191252
Complementary metal oxide semiconductor device, optical apparatus including the same, and method of manufacturing the same
A complementary metal oxide semiconductor (cmos) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a group iii-v compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate.. .
07/10/14
20140191180
Low temperature p+ polycrystalline silicon material for non-volatile memory device
A method of forming a non-volatile memory device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region of the substrate.
07/03/14
20140187021
Method of healing defect at junction of semiconductor device using germanium
This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-ge layer on a substrate, performing ion implantation on the p-ge layer to form an n+ ge region or performing in-situ doping on the p-ge layer and then etching to form an n+ ge region or depositing an oxide film on the p-ge layer and performing patterning, etching and in-situ doping to form an n+ ge layer, forming a capping oxide film, performing annealing at 600˜700° c. For 1˜3 hr, and depositing an electrode, and in which annealing enables ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device..
07/03/14
20140186956
Methods of sorting plant embryos
Methods of sorting plant somatic embryos according to germination potential are provided.. .
07/03/14
20140186944
Use of cellular extracts for obtaining pluripotent stem cells
The use of a composition including at least one permeabilized nucleus of a first cell, or at least one permeabilized first cell including the nucleus and an extract of female germinal cells, or eggs, of a multicellular organism, the eggs being blocked in the metaphase ii of meiosis, the extract including egta, for carrying out a method for obtaining pluripotent stem cells, or tissues derived from the pluripotent stem cells, or of cloning, provided that the process is not for cloning human beings.. .
07/03/14
20140185981
Silicon photonics photodetector integration
A method of forming an integrated photonic semiconductor structure having a photonic device and adjacent cmos devices may include depositing a first silicon nitride layer over the adjacent cmos devices and depositing an oxide layer over the first silicon nitride layer, wherein the oxide layer conformally covers the first silicon nitride layer and the underlying adjacent cmos devices to form a substantially planarized surface over the adjacent cmos devices. A second silicon nitride layer is then deposited over the oxide layer and a region corresponding to forming the photonic device.
07/03/14
20140185926
Demographic analysis of facial landmarks
A facial image may be annotated with the plurality of facial landmarks. These facial landmarks may be points or regions of the face that are indicative, either alone or in combination with other facial landmarks, of at least one demographic characteristic.
07/03/14
20140183666
Flourine-stabilized interface
Methods for forming an electronic device having a fluorine-stabilized semiconductor substrate surface are disclosed. In an exemplary embodiment, a layer of a high-κ dielectric material is formed together with a layer containing fluorine on a semiconductor substrate.
07/03/14
20140183637
Structure for self-aligned silicide contacts to an upside-down fet by epitaxial source and drain
An upside-down p-fet is provided on a donor substrate. The upside-down p-fet includes: self-terminating e-sige source and drain regions; a cap of self-aligning silicide/germanide over the e-sige source and drain regions; a silicon channel region connecting the e-sige source and drain regions; buried oxide above the silicon channel region; and a gate controlling current flow from the e-sige source region to the e-sige drain region..
07/03/14
20140183231
Compositions and methods for arrangement of survival materials
A survival kit to include a specially designed and arranged backpack with emergency contents is disclosed. The backpack is configured with a plurality of compartments wherein a hydration bladder having a tube for accessing water therein is provided in the first compartment.
06/26/14
20140182010
Yield traits for maize
Methods for introgressing an allele of interest of a locus associated with a yield trait into zea mays germplasm are provided. In some embodiments, the methods include providing a zea mays plant that contains an allele of interest of a locus associated with a yield trait, wherein the locus associated with the yield trait is identifiable by pcr amplification of a zea mays nucleic acid with a pair of oligonucleotides primers as disclosed herein, and introgressing the allele of interest into zea mays germplasm that lacks the allele.
06/26/14
20140182009
Genetic loci associated with soybean cyst nematode resistance and methods of use
Various methods and compositions are provided for identifying and/or selecting soybean plants or soybean germplasm with improved resistance to soybean cyst nematode. In certain embodiments, the method comprises detecting at least one marker locus that is associated with resistance to soybean cyst nematode.
06/26/14
20140179973
Method of olefin metathesis using a catalyst based on a spherical material comprising oxidised metal particles trapped in a mesostructured matrix
A process for metathesis of olefins, bringing olefins into contact with a catalyst activated by heating to a temperature in the range 100° c. To 1000° c.
06/26/14
20140179958
Catalysts and processes for producing butanol
In one embodiment, the invention is to a process for producing a catalyst composition for converting ethanol to higher alcohols, such as butanol. The process comprises contacting magnesium carbonate with one or more metal precursors to form a catalyst intermediate and calcining the catalyst intermediate to form the catalyst composition that comprises the one or more metals and magnesium oxide.
06/26/14
20140179110
Methods and apparatus for processing germanium containing material, a iii-v compound containing material, or a ii-vi compound containing material disposed on a substrate using a hot wire source
Methods and apparatus for processing a germanium containing material, a iii-v compound containing material, or a ii-vi compound containing material disposed on a substrate using a hot wire source are provided herein. In some embodiments, a method for processing a material disposed on a substrate, wherein the material is at least one of a germanium containing material, a iii-v compound containing material, or a ii-vi compound containing material, includes providing a hydrogen containing gas to a first process chamber having a plurality of filaments; flowing a current through the plurality of filaments to raise a temperature of the plurality of filaments to a first temperature sufficient to decompose at least a portion of the hydrogen containing gas to form hydrogen atoms; and treating a surface of an exposed material on a substrate by exposing the material to hydrogen atoms formed by the decomposition of the hydrogen containing gas..
06/26/14
20140179095
Methods and systems for controlling gate dielectric interfaces of mosfets
Embodiments provided herein describe methods and systems for forming gate dielectrics for field effect transistors. A substrate including a germanium channel and a germanium oxide layer on a surface of the germanium channel is provided.
06/26/14
20140179049
Silicon/germanium-based nanoparticle pastes with ultra low metal contamination
Silicon based nanoparticle inks are described with very low metal contamination levels. In particular, metal contamination levels can be established in the parts-per-billion range.
06/26/14
20140178919
Device having an internal and an external functional element and method for the production thereof
The present invention provides a device having an internal and an external functional element for producing a fluid stream having a core stream and an sheath stream. The device having an internal and an external functional element is distinguished by an internal component for shaping a core stream, an external functional element having a section for guiding an sheath stream and a section for focusing the sheath stream having core stream at the free end of the functional element, wherein the device having an internal and an external functional element is formed in such a manner that the functional element for shaping the core stream is spatially separated from the external functional element having a section for focusing the sheath stream and/or the section for guiding the sheath stream.
06/26/14
20140178867
Genetic loci associated with phytophthora tolerance in soybean and methods of use
Various methods and compositions are provided for identifying and/or selecting soybean plants or soybean germplasm with tolerance or improved tolerance to phytophthora infection. In certain embodiments, the method comprises detecting at least one marker locus that is associated with tolerance to phytophthora infection.
06/26/14
20140178866
Genetic loci associated with soybean cyst nematode resistance and methods of use
Various methods and compositions are provided for identifying and/or selecting soybean plants or soybean germplasm with resistance or improved resistance to soybean cyst nematode. In certain embodiments, the method comprises detecting at least one marker locus that is associated with resistance to soybean cyst nematode.
06/26/14
20140178777
Protected anode, lithium air battery including the same, and method of preparing ion conductive protective layer
Wherein m is at least one element selected from titanium (ti), zirconium (zr), and germanium (ge), 0≦a≦1, 0≦b≦1, 0≦c≦1, 0≦d≦0.5, 0≦e≦0.1, and 0≦f≦1.. .
06/26/14
20140175676
Method for bonding of group iii-nitride device-on-silicon and devices obtained thereof
A method for flip chip bonding a gan device formed on a silicon substrate is described. The method includes providing a silicon substrate having a gan device thereon, the gan device comprising at least one gallium-nitride layer near the silicon substrate and remote from the silicon substrate a dielectric layer comprising at least one via configured to electrically contact the at least one gallium-nitride layer, forming a stiffener layer over the gan device leaving the at least one via exposed, flip chip bonding the gan device to a submount, wherein the stiffener layer physically contacts the submount and the submount is electrically connected to the at least gallium-nitride layer through the via, and completely removing the silicon substrate exposing the gan device.
06/26/14
20140175618
Transition metal aluminate and high k dielectric semiconductor stack
Methods of forming a high k dielectric semiconductor stack are described. A semiconductor substrate is provided, in which the native oxide layer is removed.
06/26/14
20140175556
Semiconductor device having v-shaped region
Among other things, a semiconductor device or transistor and a method for forming the semiconductor device are provided for herein. The semiconductor device comprises one or more v-shaped recesses in which stressed monocrystalline semiconductor material, such as silicon germanium, is grown, to form at least one of a source or a drain of the semiconductor device.
06/26/14
20140175543
Conversion of thin transistor elements from silicon to silicon germanium
Embodiments of the present disclosure provide techniques and configurations associated with conversion of thin transistor elements from silicon (si) to silicon germanium (sige). In one embodiment, a method includes providing a semiconductor substrate having a channel body of a transistor device disposed on the semiconductor substrate, the channel body comprising silicon, forming a cladding layer comprising germanium on the channel body, and annealing the channel body to cause the germanium to diffuse into the channel body.
06/26/14
20140175513
Structure and method for integrated devices on different substartes with interfacial engineering
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first semiconductor material and a first reactivity; and a low reactivity capping layer of disposed on the semiconductor substrate, wherein the low reactivity capping layer includes a second semiconductor material and a second reactivity less than the first reactivity, the low reactivity capping layer includes silicon germanium si1−xgex and x is less than about 30%..
06/26/14
20140175510
Germanium photodetector and method of fabricating the same
Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate.
06/26/14
20140175490
Silicon-germanium light-emitting element
Provided is an element structure whereby it is possible to produce a silicon-germanium light-emitting element enclosing an injected carrier within a light-emitting region. Also provided is a method of manufacturing the structure.


Popular terms: [SEARCH]

Germ topics: Semiconductor, Transistors, Semiconductor Material, Ion Source, Optical Fiber, Photodiode, Electrical Signal, Level Shift, Source Follower, Transimpedance Amplifier, Movable Barrier, Prophylactic, Immunoglobulin, Immunoglobulins, Evaporator

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