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This page is updated frequently with new Germ-related patent applications. Subscribe to the Germ RSS feed to automatically get the update: related Germ RSS feeds. RSS updates for this page: Germ RSS RSS


Sandia

Hydrothermal synthesis of bismuth germanium oxide


Date/App# patent app List of recent Germ-related patents
07/30/15
20150214426 
 Light-emitting device patent thumbnailnew patent Light-emitting device
A light-emitting device including a first type doped semiconductor layer, a second type doped semiconductor layer, and a light-emitting layer is provided. The light-emitting layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer.
Rigidcrystal Technology Co., Ltd


07/30/15
20150214351 
 Semiconductor device including superlattice sige/si fin structure patent thumbnailnew patent Semiconductor device including superlattice sige/si fin structure
A semiconductor device includes a semiconductor-on-insulator substrate having an insulator layer, and at least one silicon germanium (sige) fin having a superlattice structure. The sige fin is formed on an upper surface of the insulator layer.
International Business Machines Corporation


07/30/15
20150214338 
 Finfet with silicon germanium stressor and  forming patent thumbnailnew patent Finfet with silicon germanium stressor and forming
The present disclosure generally provides for a method of forming a finfet with a silicon germanium (sige) stressor, in addition to a finfet structure obtained from embodiments of the method. The method can include forming a semiconductor fin on a buried insulator layer; forming a gate structure on the semiconductor fin; forming a silicon germanium (sige) layer on the buried insulator layer, wherein the sige layer contacts the semiconductor fin; and heating the sige layer, wherein the heating diffuses germanium (ge) into the semiconductor fin..
Renesas Electronics Corporation


07/30/15
20150214333 
 Tuning strain in semiconductor devices patent thumbnailnew patent Tuning strain in semiconductor devices
A fin field-effect transistor (finfet) includes a semiconductor layer over a substrate, wherein the semiconductor layer forms a channel of the finfet. A first silicon germanium oxide layer is over the substrate, wherein the first silicon germanium oxide layer has a first germanium percentage.
Taiwan Semiconductor Manufacturing Company, Ltd.


07/30/15
20150214159 
 Interconnect structure for semiconductor devices patent thumbnailnew patent Interconnect structure for semiconductor devices
A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a conductive material is embedded within a dielectric layer, the conductive material comprising a first material and having either a recess, a convex surface, or is planar.
Taiwan Semiconductor Manufacturing Company, Ltd.


07/30/15
20150214117 
 Finfet structures having silicon germanium and silicon channels patent thumbnailnew patent Finfet structures having silicon germanium and silicon channels
Silicon and silicon germanium fins are formed on a semiconductor wafer or other substrate in a manner that facilitates production of closely spaced nfet and pfet devices. A patterned mandrel layer is employed for forming one or more recesses in the wafer prior to the epitaxial growth of a silicon germanium layer that fills the recess.
International Business Machines Corporation


07/30/15
20150214051 
 Semiconductor devices and methods of manufacturing the same patent thumbnailnew patent Semiconductor devices and methods of manufacturing the same
A method of manufacturing a semiconductor device includes partially removing an upper portion of an active fin of a substrate loaded in a chamber to form a trench; and forming a source/drain layer in the trench, which includes providing a silicon source gas, a germanium source gas, an etching gas and a carrier gas into the chamber to perform a selective epitaxial growth (seg) process using a top surface of the active fin exposed by the trench as a seed so that a silicon-germanium layer is grown; and purging the chamber by providing the carrier gas into the chamber to etch the silicon-germanium layer.. .
Samsung Electronics Co., Ltd.


07/30/15
20150212219 
 Phantom and  verifying the calibration of pet scanners patent thumbnailnew patent Phantom and verifying the calibration of pet scanners
Phantom for verifying the calibration of pet scanners, comprising a substantially cylindrical body having a cross section with a convex curvilinear profile, and a plurality of spheres placed within said body, comprising a solid matrix of germanium-68, the phantom being characterized in that it further comprises a reference sphere filled with a solid matrix of germanium-68, said reference sphere being connected to the phantom in such a way that it can be removed and replaced in the same position.. .
Dixit S.r.l.


07/30/15
20150212073 
 Fluorescent probe patent thumbnailnew patent Fluorescent probe
A compound represented by the formula (i) [r1 represents hydrogen atom or a substituent; r2, r3, r6, and r7 represent hydrogen atom, an alkyl group, a halogen atom, or a hydrophilic substituent; r4 and r5 represent an alkyl group or an aryl group; r8 and r9 represent a group cleaved by contact with an object substance for measurement; and x represents silicon atom, germanium atom, or tin atom] or a salt thereof, which is useful as a fluorescent probe that emits red fluorescence by contact with an object substance for measurement.. .
The University Of Tokyo


07/30/15
20150210560 
 Hydrothermal synthesis of bismuth germanium oxide patent thumbnailnew patent Hydrothermal synthesis of bismuth germanium oxide
A method for the hydrothermal synthesis of bismuth germanium oxide comprises dissolving a bismuth precursor (e.g., bismuth nitrate pentahydrate) and a germanium precursor (e.g., germanium dioxide) in water and heating the aqueous solution to an elevated reaction temperature for a length of time sufficient to produce the eulytite phase of bismuth germanium oxide (e-bgo) with high yield. The e-bgo produced can be used as a scintillator material.
Sandia Corporation


07/30/15
20150208572 
new patent

Methods to differentiate and improve germplasm for seed emergence under stress


The present invention provides methods for testing seed germination and predicting seed emergence in stressful field conditions, such as cold and flooding stress. Cold soak test and ultra-drying methods are provided herein.
Pioneer Hi-breed International, Inc.


07/23/15
20150208231 

Over-the-air content management of wireless equipment in confined-coverage wireless networks


Content of wireless equipment (we) is managed over-the-air (ota). Content is germane to feature(s) of the we and is related to operation thereof.
At&t Mobility Ii Llc


07/23/15
20150207022 

System for the production of single crystal semiconductors and solar panels using the single crystal semiconductors


A process and the required technical arrangement has been developed to produce single crystal solar panels or otherwise used semiconductors, which starts with the raw material to produce single crystal copper ribbons, extruded directly from the melt, with unharmed and optical surfaces onto which in the next unit a silicon or germanium film will be deposited. In the next unit the copper ribbon will be removed from the silicon film, whilst a hard plastic support or ceramic support is mounted, leaving copper contours on the silicon film to be used as electrical conductors or contacts.
Grain Free Products, Inc.


07/23/15
20150206965 

High performance finfet


A finfet is described having first, second, and third pluralities of fins with gate structures and source and drain regions formed on the fins so that pmos transistors are formed on the first plurality of fins, nmos transistors are formed on the second plurality and pmos transistors are formed on the third plurality. In one embodiment, the first and second pluralities of fins are made of strained silicon; and the third plurality of fins is made of a material such as germanium or silicon germanium that has a higher hole mobility than strained silicon.
Altera Corporation


07/23/15
20150206953 

Method and structure to enhance gate induced strain effect in multigate device


A finfet formed by depositing a thin layer of polycrystalline silicon followed by depositing a stress containing material, including a high ge percentage silicon germanium film and/or a high stress w film on top of a polycrystalline silicon film. Freeing space between fins allows stressor films to be deposited closer to the transistor channel, improving the proximity of the stress containing material to the transistor channel and enhancing the stress coupling efficiency by defining a ratio between stress level in the stressor film and stress transferred to the channel for a mobility enhancement.
International Business Machines Corporation


07/23/15
20150206942 

Contact resistance reduction employing germanium overlayer pre-contact metalization


Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be implemented, for example, using a standard contact stack such as a series of metals on, for example, silicon or silicon germanium (sige) source/drain regions.
Intel Corporation


07/23/15
20150206904 

Finfet structures having silicon germanium and silicon fins


A finned structure is fabricated using a bulk silicon substrate having a carbon doped epitaxial silicon layer. A pfet region of the structure includes silicon germanium fins.
International Business Machines Corporation


07/23/15
20150206881 

Formation of silicide contacts in semiconductor devices


Methods of forming silicide contacts in semiconductor devices are presented. An exemplary method comprises providing a semiconductor substrate having an n-type field effect transistor (nfet) region and a p-type field effect transistor (pfet) region; performing a pre-amorphized implantation (pai) process to an n-type doped silicon (si) feature in on the nfet region and a p-type doped silicon germanium (sige) feature in the pfet region, thereby forming an n-type amorphous silicon (a-si) feature and a p-type amorphous silicon germanium (a-sige) feature; depositing a metal layer over each of the a-si and a-sige features; performing an annealing process on the semiconductor device with a temperature ramp-up rate tuned according to a silicide growth rate difference between the n-type a-si and the p-type a-sige features.
Taiwan Semiconductor Manufacturing Company, Ltd.


07/23/15
20150206875 

Finfet semiconductor device with germanium diffusion over silicon fins


A method for manufacturing a semiconductor device is described that comprises providing a substrate, forming a plurality of fins having a first semiconductor material, replacing a first portion of at least one of the fins with a second semiconductor material, and distributing the second semiconductor material from the first portion to a second portion of the at least one of the fins.. .
Taiwan Semiconductor Manufacturing Company, Ltd.


07/23/15
20150206744 

Finfet structures having silicon germanium and silicon fins


A finned structure is fabricated using a bulk silicon substrate having a carbon doped epitaxial silicon layer. A pfet region of the structure includes silicon germanium fins.
International Business Machines Corporation


07/23/15
20150205078 

Infrared objective for use in a remote sensor platform


Objective lens (10) for focusing infrared images in a remote sensor platform and comprising an athermalised triplet (20) consisting of a doublet (30) and a rear lens (40), the doublet (30) consisting of a first lens (50) made of a chalcogenide and a second lens (60) made of germanium.. .
Mbda Uk Limited


07/23/15
20150203923 

Molecular markers associated with chloride tolerant soybeans


The present invention provides methods and compositions for the identification and selection of loci modulating phenotypic expression of a chloride tolerant trait in plant breeding. In addition, methods are provided for screening germplasm entries for the performance and expression of this trait..
Monsanto Technology Llc


07/16/15
20150200287 

Doped gallium nitride high-electron mobility transistor


Embodiments include high electron mobility transistors (hemts) comprising a substrate and a barrier layer including a doped component. The doped component may be a germanium doped layer or a germanium doped pulse.
Triquint Semiconductor, Inc.


07/16/15
20150200223 

Image sensor device


An image sensor device includes a silicon-based substrate, a silicon-germanium epitaxy layer, an isolation feature, an active pixel cell and a logic circuit. The silicon-germanium epitaxy layer is on the silicon-based substrate, in which the silicon-germanium epitaxy layer has a composition of si1-xgex, where 0<x<1.
Taiwan Semiconductor Manufacturing Co., Ltd.


07/16/15
20150200205 

Simplified multi-threshold voltage scheme for fully depleted soi mosfets


A method for semiconductor fabrication includes providing channel regions on a substrate including at least one silicon germanium (sige) channel region, the substrate including a plurality of regions including a first region and a second region. Gate structures are formed for a first n-type field effect transistor (nfet) and a first p-type field effect transistor (pfet) in the first region and a second nfet and a second pfet in the second region, the gate structure for the first pfet being formed on the sige channel region.
Globalfoundries Inc.


07/16/15
20150200128 

Methods of forming isolated germanium-containing fins for a finfet semiconductor device


Forming a plurality of initial trenches that extend through a layer of silicon-germanium and into a substrate to define an initial fin structure comprised of a portion of the layer of germanium-containing material and a first portion of the substrate, forming sidewall spacers adjacent the initial fin structure, performing an etching process to extend the initial depth of the initial trenches, thereby forming a plurality of final trenches having a final depth that is greater than the initial depth and defining a second portion of the substrate positioned under the first portion of the substrate, forming a layer of insulating material over-filling the final trenches and performing a thermal anneal process to convert at least a portion of the first or second portions of the substrate into a silicon dioxide isolation material that extends laterally under an entire width of the portion of the germanium-containing material.. .
Globalfoundries Inc.


07/16/15
20150199883 

Hand sanitation dispensing and tracking systems and methods


A hand sanitation dispensing and tracking system is disclosed that encourages proper hand sanitization to maintain cleanliness and limit the spread of harmful pathogens. More specifically, a system is provided that detects the approach of a person to an area where it is desirous to limit the spread of germs, provides escalating notifications to the person to sanitize their hands, tracks whether the person uses the sanitizer, and records the information for later statistical analysis.

07/16/15
20150197813 

Method for determining sensitivity to decitabine treatment


The present invention is a gene expression panel of chemotherapeutic drug-resistant cancer stem cells comprising rin1, sox15 and tlr4. In one embodiment the cancer stem cells are testicular cancer germ cells.
Trustees Of Dartmouth College


07/16/15
20150196016 

Mmtv-sv40-spy1a and spy1a-ptre transgenic mouse models


In one aspect, the invention provides a transgenic non-human animal model having germ cells and somatic cells containing an endogenous mmtv-sv40-spy1a gene sequence introduced into said animal model or an ancestor of said animal model at an embryonic stage, wherein said gene sequence comprises a mouse mammary tumor virus gene (mmtv), a functionally disrupted sv40 gene (sv40) and a human spy1a gene. In another aspect, the present invention provides a transgenic non-human animal model whose germ cells and somatic cells contain an endogenous spy1a-ptre-tight gene sequence introduced into said animal model or an ancestor of said animal model at an embryonic stage.

07/09/15
20150194525 

Silicon germanium finfet formation by ge condensation


A method of forming a semiconductor fin of a finfet device includes conformally depositing an amorphous or polycrystalline thin film of silicon-germanium (sige) on the semiconductor fin. The method also includes oxidizing the amorphous or polycrystalline thin film to diffuse germanium from the amorphous or polycrystalline thin film into the semiconductor fin.
Qualcomm Incorporated


07/09/15
20150194416 

Single-chip field effect transistor (fet) switch with silicon germanium (sige) power amplifier and methods of forming


Various embodiments include field effect transistors (fets) and methods of forming such fets. One method includes: forming a first set of openings in a precursor structure having: a silicon substrate having a crystal direction, the silicon substrate substantially abutted by a first oxide; a silicon germanium (sige) layer overlying the silicon substrate; a silicon layer overlying the sige layer; a second oxide overlying the silicon layer; and a sacrificial layer overlying the second oxide, wherein the first set of openings each expose the silicon substrate; undercut etching the silicon substrate in a direction perpendicular to the crystal direction of the silicon substrate to form a trench corresponding with each of the first set of openings; passivating exposed surfaces of at least one of the sige layer or the silicon layer in the first set of openings; and at least partially filling each trench with a dielectric..
International Business Machines Corporation


07/09/15
20150191833 

Systems and methods for generating germicidal compositions


The present invention relates to systems and methods for generating germicidal compositions for use in a wide variety of settings, including agricultural settings, food production settings, hospitality settings, health care settings, health club settings, exercise facility settings, research based settings, veterinarian settings, medical settings, hydraulic fracturing settings, and/or any setting requiring disinfection.. .
Zurex Pharmagra Llc


07/09/15
20150191797 

Systems and methods for diagnosing a predisposition to colon cancer


Systems and methods for diagnosing or characterizing a predisposition to colon cancer are provided. Cell nuclei may be evaluated for the presence or quantity of gamma-h2ax foci or their total gamma-h2ax levels.
Institute For Cancer Research D/b/a The Research Institute Of Fox Chase Cancer Center


07/09/15
20150191616 

Silicon/germanium nanoparticles and inks having low metal contamination


Laser pyrolysis reactor designs and corresponding reactant inlet nozzles are described to provide desirable particle quenching that is particularly suitable for the synthesis of elemental silicon particles. In particular, the nozzles can have a design to encourage nucleation and quenching with inert gas based on a significant flow of inert gas surrounding the reactant precursor flow and with a large inert entrainment flow effectively surrounding the reactant precursor and quench gas flows.
Nanogram Corporation


07/09/15
20150190537 

Sanitizing apparatus


The present disclosure presents sanitization devices and methods. More particularly, the disclosure presents devices and methods that significantly reduce or eliminate the activity of germs, bacteria and/or other infectious microorganisms from objects such as tv remotes, cell phones, electronic devices and personal and other handheld devices.

07/09/15
20150189888 

Aqueous alcoholic microbicidal compositions comprising zinc ions


Compositions which impart a microbicidal benefit to treated surfaces which compositions comprise (or in certain preferred embodiments may consist essentially of, or may consist of): a zinc ion source material which releases zinc ions into the treatment composition, preferably a source of zn++ ions; preferably at least from about 20% wt. Of at least one alcohol, which is preferably a lower alkyl monohydric alcohol) and water, optionally one or more further surfactants, further optionally one or more constituents which impart one or more advantageous technical or aesthetic benefits to the compositions, including one or more detersive surfactants; and water, wherein the composition has a ph of at least 4, preferably at least 5, wherein the surface treatment compositions, exhibit a microbicidal or germicidal or antimicrobial effect on treated inanimate surfaces, characterized in exhibiting a microbicidal benefit when tested against one or more challenge microorganisms, according to one or more of the following standardized test protocols: astm e1052 standard test method for efficacy of antimicrobial agents against viruses in suspension, or astm e1053 standard test method to assess virucidal activity of chemicals intended for disinfection of inanimate, nonporous environmental surfaces, or european standard surface test, en13697, or aoac germicidal spray products as disinfectant test method, aoac index.
Reckitt Benckiser Llc


07/09/15
20150189871 

Control of arthropod infestation using particles comprising an entomopathogen and wax


Composite particles containing hydrophobic particles and spores of an entomopathogenic fungus that are capable of germinating on the cuticle of a grain storage arthropod, dry powder compositions comprising such composite particles, methods of producing such compositions and methods and uses thereof.. .
Exosect Limited


07/02/15
20150187947 

Finfet with active region shaped structures and channel separation


A semiconductor structure in fabrication includes a n-finfet and p-finfet. Stress inducing materials such as silicon and silicon germanium are epitaxially grown into naturally diamond-shaped structures atop the silicon fins of the n-finfet and p-finfet areas.
Globalfoundries Inc.


07/02/15
20150187773 

High mobility transistors


An integrated circuit containing an n-channel finfet and a p-channel finfet has a dielectric layer over a silicon substrate. The fins of the finfets have semiconductor materials with higher mobilities than silicon.
Texas Instruments Incorporated


07/02/15
20150187755 

Npn heterojunction bipolar transistor in cmos flow


An integrated circuit formed on a silicon substrate includes an nmos transistor with n-channel raised source and drain (nrsd) layers adjacent to a gate of the nmos transistor, a pmos transistor with sige stressors in the substrate adjacent to a gate of the pmos transistor, and an npn heterojunction bipolar transistor (nhbt) with a p-type sige base formed in the substrate and an n-type silicon emitter formed on the sige base. The sige stressors and the sige base are formed by silicon-germanium epitaxy.
Texas Instruments Incorporated


07/02/15
20150187584 

Tunneling field effect transistor (tfet) formed by asymmetric ion implantation and making same


An embodiment integrated circuit device and a method of making the same. The embodiment method includes forming a first nitride layer over a gate stack supported by a substrate, implanting germanium ions in the first nitride layer in a direction forming an acute angle with a top surface of the substrate, etching away germanium-implanted portions of the first nitride layer to form a first asymmetric nitride spacer confined to a first side of the gate stack, the first asymmetric nitride spacer protecting a first source/drain region of the substrate from a first ion implantation, and implanting ions in a second source/drain region of the substrate on a second side of the gate stack unprotected by the first asymmetric nitride spacer to form a first source/drain..
Taiwan Semiconductor Manufacturing Company, Ltd.


07/02/15
20150187571 

Germanium-containing finfet and methods for forming the same


A method includes forming isolation regions in a semiconductor substrate, forming a first semiconductor strip between opposite portions of isolation regions, forming a second semiconductor strip overlying and contacting the first semiconductor strip, and performing a first recessing to recess the isolation regions. A portion of the second semiconductor strip over top surfaces of remaining portions of the isolation regions forms a semiconductor fin.
Taiwan Semiconductor Manufacturing Company, Ltd.


07/02/15
20150184191 

Yield and stress tolerance in transgenic plants iv


Polynucleotides and polypeptides incorporated into expression vectors have been introduced into plants and were ectopically expressed. The polypeptides of the invention have been shown to confer at least one regulatory activity and confer increased yield, greater height, greater early season growth, greater canopy coverage, greater stem diameter, greater late season vigor, increased secondary rooting, more rapid germination, greater cold tolerance, greater tolerance to water deprivation, reduced stomatal conductance, altered c/n sensing, increased low nitrogen tolerance, increased low phosphorus tolerance, or increased tolerance to hyperosmotic stress as compared to the control plant as compared to a control plant..
Monsanto Technology Llc


07/02/15
20150183853 

Methods and compositions for generation of germline human antibody genes


The present invention relates to a method for in vitro producing polynucleotides encoding human germline antibody v-regions. Also disclosed is a library of human germline antibody v-region genes..
Integrigen, Inc.


07/02/15
20150183062 

Solder alloy, solder paste, and electronic circuit board


A solder alloy is a tin-silver-copper solder alloy containing tin, silver, copper, nickel, antimony, bismuth, and indium, and substantially does not contain germanium, wherein relative to the total amount of the solder alloy, the silver content is more than 0.05 mass % and less than 0.2 mass %, and the antimony content is 0.01 mass % or more and less than 2.5 mass %.. .
Harima Chemicals, Incorporated


07/02/15
20150182490 

Methods for treating tyrosine-kinase-inhibitor-resistant malignancies in patients with genetic polymorphisms or ahi1 dysregulations or mutations employing dianhydrogalactitol, diacetyldianhydrogalactitol, dibromodulcitol, or analogs or derivatives thereof


Methods and compositions suitable for the treatment of malignancies in subjects with a germline deletion polymorphism that blocks the activity of thymidine kinase inhibitors in triggering apoptosis in tumor cells or in subjects having a mutation in or a dysregulation of the ahi1 gene are disclosed. These methods employ an alkylating hexitol derivative such as dianhydrogalactitol, a derivative or analog of dianhydrogalactitol, diacetyldianhydrogalactitol, a derivative or analog of diacetyldianhydrogalactitol, dibromodulcitol, and a derivative or analog of dibromodulcitol.
Del Mar Pharmaceuticals


07/02/15
20150182448 

Traditional chinese medicine composition for dispelling wringles and black eye and its preparation method


The invention provides a composition and method for preparing medicine for eye bags and dark circles fade, wherein said composition comprises the following parts by weight ratio of raw material composition: 10-15 parts water, ganoderma lucidum extract 2-3 copies, black ganoderma extract 3-4, 5-6 parts wheat germ oil, sucrose laurate 2-3 parts, 3-5 parts chamomile extract, 3-5 parts of milk protein, yeast ferment filtrate 3-5 copies, dextran 2-3 copies, copies tremella 2-4, 2-3 parts angelica root extract, astragalus extract 2-3 parts. The above described method for preparing a composition according to the present invention, without any side effects, can be soft smooth skin around the eyes, remove free radicals, enhance the resilience of the skin, thereby improving eye skin color, to get rid of dark circles effect..
Shang Chen Mei Bang (beijing) Biotechnology Co., Ltd.


07/02/15
20150182442 

Traditional chinese medicine composition that has the effect of soothing and cleaning face


The invention provides a traditional chinese medicine composition that has the effect of soothing and cleaning face, wherein said composition comprises the following servings by weight of the composition ratio of raw material: 5 to 15 servings of water, 2 to 4 servings of decyl glucoside, 1 to 2 servings of lotus extract, 3 to 5 servings of rose oil, 2 to 3 servings of calendula extract, 1 to 2 servings of witch hazel extract, 4 to 5 servings of glycerin, 3 to 5 servings of wheat germ extract, 2 to 3 servings of glycoproteins, 1 to 3 servings of citric acid, 2 to 3 servings peony root extract. The compositions can wash the face makeup and impurities, the skin to bring fresh and comfortable feeling, soft, smooth skin feel more compact, soft and moist..
Shang Chen Mei Bang (beijing) Biotechnology Co., Ltd.




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