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 Semiconductor device and  fabricating the same patent thumbnailnew patent Semiconductor device and fabricating the same
A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium..
Samsung Electronics Co., Ltd.


 Method for making iii-v nanowire quantum well transistor patent thumbnailnew patent Method for making iii-v nanowire quantum well transistor
The present invention provides a filed effect transistor and the method for preparing such a filed effect transistor. The filed effect transistor comprises a semiconductor, germanium nanowires, a first iii-v compound layer surrounding the germanium nanowires, a semiconductor barrier layer, a gate dielectric layer and a gate electrode sequentially formed surrounding the first iii-v compound layer, and source/drain electrodes are respectively located at each side of the gate electrode and on the first iii-v compound layer.
Zing Semiconductor Corporation


 Complementary metal-oxide-semiconductor field-effect transistor and method thereof patent thumbnailnew patent Complementary metal-oxide-semiconductor field-effect transistor and method thereof
This invention application provides a complementary metal-oxide-semiconductor field-effect transistor and method thereof. The transistor comprises a semiconductor substrate, a n-type field-effect transistor positioned in the semiconductor substrate, and a p-type field-effect transistor positioned in the semiconductor substrate and spaced apart the n-type field-effect transistor.
Zing Semiconductor Corporation


 Germanium smoothing and chemical mechanical planarization processes patent thumbnailnew patent Germanium smoothing and chemical mechanical planarization processes
Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one ph modulator, and an oxidizer, the at least one ph modulator including an acidic ph modulator, and lacking a basic ph modulator.. .
Jsr Corporation


 Optical fiber patent thumbnailnew patent Optical fiber
An optical fiber having a reduced attenuation includes a silica glass core and a silica glass cladding. The silica glass core has substantially no germanium and includes a first core and a second core.
Sumitomo Electric Industries, Ltd.


 Symbiotic aquaponic growth system patent thumbnailnew patent Symbiotic aquaponic growth system
A symbiotic aquaponic growth system is a system for growing plants. An aquaculture reservoir holds water and aquatic animals.

 Germanium metal-contact-free near-ir photodetector patent thumbnailGermanium metal-contact-free near-ir photodetector
A ge-on-si photodetector constructed without doping or contacting germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 a/w, corresponding to 99.2% quantum efficiency.
Elenion Technologies, Llc


 Method and  source-drain junction formation in a finfet with in-situ doping patent thumbnailMethod and source-drain junction formation in a finfet with in-situ doping
A portion of a bulk silicon (si) is formed into a fin, having a fin base and, on the fin base, an in-process fin. The fin base is doped si and the in-process fin is silicon germanium (sige).
Qualcomm Incorporated


 Finfet semiconductor device with germanium diffusion over silicon fins patent thumbnailFinfet semiconductor device with germanium diffusion over silicon fins
A method for manufacturing a semiconductor device is described that comprises providing a substrate, forming a plurality of fins having a first semiconductor material, replacing a first portion of at least one of the fins with a second semiconductor material, and distributing the second semiconductor material from the first portion to a second portion of the at least one of the fins.. .
Taiwan Semiconductor Manufacturing Company, Ltd.


 Selector elements patent thumbnailSelector elements
Provided are selector elements with active components comprising insulating matrices and mobile ions disposed within these insulating matrices. Also provided are methods of operating such selector elements.
Intermolecular, Inc.


Integrated circuit with heterogeneous cmos integration of strained silicon germanium and group iii-v semiconductor materials and method to fabricate same

A structure includes an off-axis si substrate with an overlying s-si1-xgex layer and a box between the off-axis si substrate and the s-si1-xgex layer. The structure further includes pfet fins formed in the s-si1-xgex layer and a trench formed through the s-si1-xgex layer, the box and partially into the off-axis si substrate.
International Business Machines Corporation

Method for growing parallel elongate elements (nanowires, microwires) from a substrate comprising, for each elongate element, a seed formed in a cavity of a nucleation layer or a nucleation pad

The method for growing an elongate element (5), notably a wire of nanowire or microwire type, includes forming a nucleation surface (3) having at least one germination site adopting the form of a germination hollow (7) and delimited at least partly by a mask (2), the at least one germination hollow (7) being situated at a distance from the mask (2), performing nucleation of a seed (4) intended to participate in the growth of the elongate element (5) on the at least one germination hollow (7), and growing the elongate element (5) from the seed (4).. .
Commissariat A L'energie Atomique Et Aux Energies Alternatives

Process for the preparation of pure octachlorotrisilanes and decachlorotetrasilanes

The invention relates to a process for producing trimeric and/or quaternary silicon compounds or trimeric and/or quaternary germanium compounds, where a mixture of silicon compounds or a mixture of germanium compounds is exposed to a nonthermal plasma, and the resulting phase is subjected at least once to a vacuum rectification and filtration.. .
Evonik Degussa Gmbh

Removal of phytate

The present invention relates to a steeping process for reducing the phytate in kernels of cereals and/or pulses using endogenous phythase. The kernels are steeped in water whilst avoiding germination and then dried.
Cargill, Incorporated

Human artificial chromosome containing human antibody lambda light chain gene and non-human animal containing the human artificial chromosome capable of genetic transmission

The present invention relates to a human artificial chromosome which is genetically transmissible to the next generation with high efficiency and the method for using the same. More specifically, the present invention relates to: a human artificial chromosome in which an about 3.5 mb to about 1 mb region containing an antibody λ light chain gene derived from human chromosome 22 is bound to a chromosome fragment which is transmissible to a progeny through a germ line of a non-human animal, said chromosome fragment is derived from another human chromosome; a non-human animal carrying the human artificial chromosome and an offspring thereof; a method for producing the non-human animal; a method for producing a human antibody using the nonhuman animal or an offspring thereof; and a human antibody-producing mouse carrying the human artificial chromosome..
Kyowa Hakko Kirin Co. Ltd.

Slurry composition for chemical mechanical polishing of ge-based materials and devices

A cmp slurry composition which provides for a high ge- or sige-to-dielectric material selectivity a low rate of ge or sige recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor.
Uwiz Technology Co., Ltd.

Fluorescent probe

A compound represented by the formula (i) (r1 represents hydrogen atom or a monovalent substituent; r2 and r3 represent hydrogen atom, an alkyl group, or a halogen atom; r4 and r5 represent an alkyl group or an aryl group; r6 and r7 represent hydrogen atom, an alkyl group, or a halogen atom; r8 represent hydroxy group or a dialkoxyboranetriyl group; and x represents silicon atom, germanium atom, or tin atom), which is a novel fluorophore usable as a mother nucleus of an off/on type fluorescent probe not utilizing the intramolecular photoinduced electron transfer.. .
The University Of Tokyo

Anti-inflammatory compounds and methods of use

Disclosed herein are methods of treating or inhibiting inflammation in a subject by administering an anti-inflammatory protein to the subject. In some embodiments, the protein has at least 80% sequence identity to the amino acid sequence set forth as seq id no: 1 or fragments thereof.
University Of Oregon

One piece flat device of for the drainage of aqueous humor from the eye

The invention relates to a stainless steel device for permanent insertion into the sclerocorneal limbus, with different drainage and anchorage systems, enabling the aqueous humour to discharge through one or more virtual spaces from the anterior chamber to an intrascleral space in cases of simple glaucoma or to the equatorial episclera in cases of complex glaucoma, such as neovascular glaucoma. The space is virtual, not real, as in the case of the tubular device.

Dry aging portable device

A method and system for dry aging the meat product uses a 12 volt dc powered portable unit comprising a plastic box configured for housing the primal cut of meat and placed inside a refrigeration system. The box is further equipped with an internal and external blower to control the air circulation and humidity respectively inside the box.

Combinations of lipo-chitooligosaccharides and methods for use in enhancing plant growth

Disclosed are methods of enhancing plant growth, comprising treating plant seed or the plant that germinates from the seed with an effective amount of at least two lipo-chitooligosaccharides, wherein upon harvesting the plant exhibits at least one of increased plant yield measured in terms of bushels/acre, increased root number, increased root length, increased root mass, increased root volume and increased leaf area, compared to untreated plants or plants harvested from untreated seed.. .
Novozymes Bioag A/s

Method for forming a semiconducting portion by epitaxial growth on a strained portion

The invention pertains to formation of a semiconducting portion (60) by epitaxial growth on a strained germination portion (40), comprising the steps in which a cavity (21) is produced under a structured part (11) by rendering free a support layer (30) situated facing the structured part (11), a central portion (40), termed the strained germination portion, then being strained; and a semiconducting portion (60) is formed by epitaxial growth on the strained germination portion (40), wherein the structured part (11) is furthermore placed in contact with the support layer (30) in such a way as to bind the structured part (11) of the support layer.. .
Commissariat A I'energie Atomique Et Aux Energies Alternatives

Photodetector with integrated temperature control element

A temperature-controlled photodetector sub-system is described. The temperature control element allows the operation of the photodetector at a desired temperature.
Coriant Advanced Technology, Llc

Tensile strained high percentage silicon germanium alloy finfets

A thermal mixing process is employed to convert a portion of a silicon germanium alloy fin having a first germanium content and an overlying non-doped epitaxial silicon source material into a silicon germanium alloy source structure having a second germanium content that is less than the first germanium content, to convert another portion of the silicon germanium alloy fin and an overlying non-doped epitaxial silicon drain material into a silicon germanium alloy drain structure having the second germanium content, and to provide a tensile strained silicon germanium alloy fin portion having the first germanium content. A dopant is then introduced into the silicon germanium alloy source structure and into the silicon germanium alloy drain structure..
International Business Machines Corporation

Heterojunction field-effect transistor

A process for fabricating a heterojunction field-effect transistor including a semiconductor structure made up of superposed layers, including: providing on a substrate layer (1) a buffer layer (2), a channel layer (3) and a barrier layer (4), the layers being made of materials having hexagonal crystal structures of the ga(1-p-q)al(p)in(q)n type; forming an opening in a dielectric masking layer (5) deposited on the barrier layer; growing by high-temperature epitaxy a semiconductor material (6, 6′) having a hexagonal crystal structure, namely ga(1-x′-y′)al(x′)in(y′)n, doped with germanium, on a growth zone defined by the opening formed in the masking layer; and depositing a source or drain contact electrode (15, 16) on the material thus deposited by epitaxy, and a gate electrode (13) in a location outside of the growth zone.. .
Ommic

Iii-v mosfet with self-aligned diffusion barrier

A method is presented for forming a diffusion barrier in a field effect transistor with a source. A raised source is formed at least partially on the source with the raised source comprising iii-v material.
International Business Machines Corporation

Iii-v mosfet with self-aligned diffusion barrier

A method is presented for forming a diffusion barrier in a field effect transistor with a source. A raised source is formed at least partially on the source with the raised source comprising iii-v material.
International Business Machines Corporation

Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction

A semiconductor device that includes at least one germanium containing fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane. The semiconductor device also includes at least one germanium free fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane.
International Business Machines Corporation

Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction

A semiconductor device that includes at least one germanium containing fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane. The semiconductor device also includes at least one germanium free fin structure having a length along a <100> direction and a sidewall orientated along the (100) plane.
International Business Machines Corporation

Improved plasmonic structures and devices

A plasmonic structure (10) comprising a layer of metal (14) in which the metal is selected from: a group 8 to group 11 transition metal, aluminium, germanium, antimony or bismuth, and a barrier layer (16) formed from a 2-d material disposed on a surface of the layer of metal (14). The metal layer has a roughness that permits the propagation of running plasmons along the interface of the metal layer and the barrier layer..
The University Of Manchester



Germ topics:
  • Semiconductor
  • Transistors
  • Semiconductor Material
  • Ion Source
  • Optical Fiber
  • Photodiode
  • Electrical Signal
  • Level Shift
  • Source Follower
  • Transimpedance Amplifier
  • Movable Barrier
  • Prophylactic
  • Immunoglobulin
  • Immunoglobulins
  • Evaporator


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    This listing is a sample listing of patent applications related to Germ for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Germ with additional patents listed. Browse our RSS directory or Search for other possible listings.


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