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Germ-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Metal-contact-free photodetector
Elenion Technologies, Llc
April 12, 2018 - N°20180102447

A ge-on-si photodetector constructed without doping or contacting germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1. 24 a/w, corresponding to 99. 2% quantum efficiency. Dark current is 40 na at −4 v reverse bias. 3-db bandwidth is 30 ghz.
Photodetector with integrated temperature control element
Elenion Technologies, Llc
April 12, 2018 - N°20180102440

A temperature-controlled photodetector sub-system is described. The temperature control element allows the operation of the photodetector at a desired temperature. The temperature control element can be a heater or a cooler. In some cases, the photodetector is a germanium photodetector. In some cases a temperature measuring device is provided. In some cases, a control circuit is used to control the ...
Land-use sustainability analysis toolbox
April 12, 2018 - N°20180101919

The toolbox has been modeled within arcgis™ 10. 3, using python language, and adjusted according to the german standards, as default values, but in the same time, it can be easily readjusted by the users to any country standards.
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Apparatus and process for producing sausage products
Deutsches Institut Fuer Lebensmitteltechnik E.v.
April 12, 2018 - N°20180098562

Process and an apparatus adapted to carry out the process steps for producing sausage products, which includes the following steps: comminuting raw meat with fat, adding seasoning, salt and further additives, mixing in order to produce a raw sausage mass, forming the raw sausage mass, warming and fermenting the formed raw sausage mass, warming the formed fermented sausage mass to ...
Electroactive materials
April 05, 2018 - N°20180097193

In formula i: ar1 and ar2 are the same or different and are aryl, heteroaryl, or deuterated analogs thereof; l1 and l2 are the same or different and are h, d, halogen, aryl, arylamino, crosslinkable groups, deuterated aryl, deuterated arylamino, or deuterated crosslinkable groups; r1-r4 are the same or different at each occurrence and are d, f, cn, hydrocarbon ...
Finfet device and method of fabricating same
Taiwan Semiconductor Manufacturing Company, Ltd.
April 05, 2018 - N°20180097097

An integrated circuit structure includes a semiconductor substrate, and isolation regions extending into the semiconductor substrate, wherein the isolation regions have opposite sidewalls facing each other. A fin structure includes a silicon fin higher than top surfaces of the isolation regions, a germanium-containing semiconductor region overlapped by the silicon fin, silicon oxide regions on opposite sides of the germanium-containing semiconductor ...
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Method of gas-phase deposition by epitaxy
Stmicroelectronics (crolles 2) Sas
April 05, 2018 - N°20180096844

A gas phase epitaxial deposition method deposits silicon, germanium, or silicon-germanium on a single-crystal semiconductor surface of a substrate. The substrate is placed in an epitaxy reactor swept by a carrier gas. The substrate temperature is controlled to increase to a first temperature value. Then, for a first time period, at least a first silicon precursor gas and/or a ...
Melon plants with improved traits
Seminis Vegetable Seeds, Inc.
April 05, 2018 - N°20180094276

The present disclosure provides melon plants exhibiting resistance to powdery mildew, aphids, and cucumber vein yellowing virus (cvyv). In certain embodiments, the invention provides melon plants with powdery mildew, aphid, and cvyv resistance loci located in cis linkage on chromosome 5. In certain aspects, compositions, including novel polymorphic markers and methods for producing, breeding, identifying, and selecting plants or germplasm with ...
Media compositions for promoting bacterial and fungal growth
Texas Tech University System
April 05, 2018 - N°20180094234

Methods and compositions for enhancing or promoting germination of bacterial spores, and yeasts are disclosed herein. The composition of the present invention comprises an extract obtained from banana or any member belonging to the genus musa that may be used alone or in a growth medium to promote and enhance germination of bacterial spores, growth of bacterial, yeast, and fungal ...
Methods to identify soybean aphid resistant quantitative trait loci in soybean and compositions thereof
University Of Georgia Research Foundation, Inc.
April 05, 2018 - N°20180092323

The present invention is in the field of plant breeding and aphid resistance. More specifically, the invention includes a method for breeding soybean plants containing quantitative trait loci that are associated with resistance to aphids, aphis glycines. The invention further includes method for monitoring the introgression quantitative trait loci (qtl) conferring aphid resistance into elite germplasm in a breeding program.
Xanthomonas resistant brassica oleracea plants
Seminis Vegetable Seeds, Inc.
April 05, 2018 - N°20180092318

The present disclosure provides brassica oleracea plants exhibiting broad spectrum resistance to xanthomonas campestris pv. Campestris. Such plants may comprise novel introgressed genomic regions associated with disease resistance from brassica oleracea var. Capitata. In certain aspects, compositions, including novel polymorphic markers and methods for producing, breeding, identifying, and selecting plants or germplasm with a disease resistance phenotype are provided.
Pretreatment method for directly seeding in vitro microtuber
E Green Global Co., Ltd.
April 05, 2018 - N°20180092317

Provided is a pretreatment method for directly seeding an in vitro microtuber in an open field including: sterilizing a washed in vitro microtuber with chlorine dioxide and drying the sterilized in vitro microtuber; irradiating the dried in vitro microtuber with light and greening the dried in vitro microtuber; putting the greened in vitro microtuber in a storage container and storing ...
Semiconductor device and method of manufacturing the same
Renesas Electronics Corporation
March 29, 2018 - N°20180090636

A provided semiconductor device includes a ge photodiode having proper diode characteristics. A groove is provided on a germanium growth protective film, a p-type silicon layer, and a first insulating film from the top surface of the germanium growth protective film without reaching the major surface of a semiconductor substrate. An i-type germanium layer and an n-type germanium layer are ...
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Low resistivity wrap-around contacts
International Business Machines Corporation
March 29, 2018 - N°20180090582

Low resistivity, wrap-around contact structures are provided in nanosheet devices, vertical fets, and finfets. Such contact structures are obtained by delivering dopants to source/drain regions using a highly conformal, doped metal layer. The conformal, doped metal layer may be formed by ald or cvd using a titanium tetraiodide precursor. Dopants within the conformal, doped metal layer are delivered during ...
Tensile strained nfet and compressively strained pfet formed on strain relaxed buffer
International Business Machines Corporation
March 29, 2018 - N°20180090573

A tensile strained silicon layer and a compressively strained silicon germanium layer are formed on a strain relaxed silicon germanium buffer layer substrate. A relaxed silicon layer is formed on the substrate and the compressively strained silicon germanium layer is formed on the relaxed silicon layer. The compressively strained silicon germanium layer can accordingly have approximately the same concentration of ...
Semiconductor device and method of forming the semiconductor device
International Business Machines Corporation
March 29, 2018 - N°20180090494

A method of forming a semiconductor device, includes forming first and second sige fins on a substrate, forming a protective layer on the first sige fin, forming a germanium-containing layer on the second sige fin and on the protective layer on the first sige fin, and performing an anneal to react the germanium-containing layer with a surface of the second ...
Soybean seed and oil compositions and methods of making same
Monsanto Technology Llc
March 29, 2018 - N°20180087066

Methods for obtaining soybean plants that produce seed with low linolenic acid levels and moderately increased oleic levels are disclosed. Also disclosed are methods for producing seed with low linolenic acid levels, moderately increased oleic levels and low saturated fatty acid levels. These methods entail the combination of transgenes that provide moderate oleic acid levels with soybean germplasm that contains ...
Phosphor and light emitting device
Chi-mei Corporation
March 29, 2018 - N°20180086974

The present invention provides a phosphor, including a constituent having the formula capsrqmm-aa-bb—ot—nn:zr, in which m selected from the group consisting of magnesium, barium, beryllium and zinc; a selected from the group consisting of aluminum, gallium, indium, scandium, yttrium, lanthanum, gadolinium and lutetium; b selected from the group consisting of silicon, germanium, tin, titanium, zirconium ...
System and apparatus for sanitizing a door opening device or other point of contact
March 29, 2018 - N°20180085481

An apparatus for sanitizing a point-of-contact surface may include a housing configured to be affixed about at least a portion of said point of contact. The housing may have an interior in or through which the point of contact may be accessed and an anterior opening for access to the interior. The apparatus may further include one or more sources ...
Handmats
March 29, 2018 - N°20180084847

A hand protection device, keeps hands clean, protect against germs, viruses, cuts, abrasions, heat, cold+grip property. The handmat protects the inside of a person hands. It sits directly in the palm of the user's hand. It can be used whenever and however a person wants. It attaches to a person's body or a bag to be conveniently used.
Thermoelectric material, manufacturing method of thermoelectric material, and thermoelectric converter
Hakusan, Inc.
March 22, 2018 - N°20180083177

A thermoelectric material contains as a major ingredient a magnesium silicon alloy, a magnesium silicon tin alloy, a silicon or a silicon germanium alloy, and includes a porous body with a large number of pores.
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