| Patent Application Title
||Patent App Num.
| Methods of producing human rpe cells and pharmaceutical preparations of human rpe cells|| 20130149284 || 20130613 |
| The present invention provides improved methods for producing retinal pigmented epithelial (RPE) cells from human embryonic stem cells, human induced pluripotent stem (iPS), human adult stem cells, human hematopoietic stem cells, human fetal stem cells, human mesenchymal stem cells, human postpartum stem cells, human multipotent stem cells, or human embryonic germ cells. The RPE cells derived from embryonic stem cells are molecularly distinct from adult and fetal-derived RPE cells, and are also distinct from embryonic stem cells. The RPE cells described herein are useful for treating retinal degenerative conditions including retinal detachment and macular degeneration.
|Method of inducing differentiation from pluripotent stem cells to germ cells|| 20130143321 || 20130606 |
| This invention provides a method of producing an epiblast-like cell (EpiLC) from a pluripotent stem cell, which comprises culturing the pluripotent stem cell in the presence of activin A; a method of producing a primordial germ cell-like (PGC-like) cell a pluripotent stem cell, which comprises culturing the EpiLC obtained by the method above in the presence of BMP4 and LIF. Also provided are a cell population containing PGC-like cells as obtained by the method, and reagent kits for the EpiLC- and PGC-like cell-induction from a pluripotent stem cell.
|Food-grade flour from dry fractionated corn germ and collet composition and method for producing same|| 20130136845 || 20130530 |
| A nutrient rich food-grade defatted corn germ flour derived from a dry-milled corn germ fraction is provided. The flour produced contains high levels of protein, dietary fiber, and amino acids and is low in fat. Furthermore, a method for preparing the flour by forming collets and removing oil from the dry-milled corn germ fraction is provided. The method includes: providing a dry-milled corn germ fraction; conditioning the fraction; flaking the fraction to increase surface area; adding water and steam to the flaked fraction; forming the flaked fraction into collets; removing oil from the collets by solvent-extraction; drying the collets; and processing the collets in a food-grade flourmill to obtain food-grade defatted corn germ flour with a desired consistency. The solvent-extraction process produces a miscella, a mixture...|
|Multipotent stem cell cultures|| 20130108588 || 20130502 |
| The invention provides methods for propagation of multipotent stem cells from human skin fibroblast samples using an appropriate medium, such as an amniotic fluid medium (AFM), and subsequent differentiation of the cells into cells of any of the three germ layers. The invention also provides methods of differentiating and making various tissues from multipotent cells in skin fibroblasts cultures that are capable of in vitro differentiation and that the cells are useful as a source of in vivo gene and/or autologous cell therapy. Isolated multipotent stem cells, cultures of multipotent stem cells, and differentiated cells derived from the cultures of multipotent stem cells that are obtained by the methods disclosed herein also are provided. The methods, cells, cultures, media, banks, batches, and collections so provided can...|
|Water system for a vehicle and method for reducing germs in a water system|| 20130094994 || 20130418 |
| A water system for a vehicle is provided. The water system comprises at least one water supply source, at least one water-conducting device, at least one closing valve and at least one germ reduction connection. The germ reduction connection and the water supply source are connected to the water-conducting device. The germ reduction connection is designed to introduce a germ-reducing fluid into the water-conducting device. The closing valve is arranged between the water supply source and the germ reduction connection and is designed to be fully closed thus preventing the ingress of germ-reducing fluid into the water supply source. By means of such a water system it is possible to carry out sterilization or disinfection very easily and quickly without this requiring any major maintenance work.
Subscribe to updates on this page: Germ RSS
|Stem cell secreted product derived compositions for wound treatment|| 20130089514 || 20130411 |
| Compositions including formulations comprising secreted products obtained from the culture medium of stem cells, such as umbilical cord blood stem cells, or embryonic germ cell derivatives, or embryonic stem cells, are provided for enhancement of wound healing. Further compositions contain components identified in such culture medium to enhance wound healing. Methods for using the compositions and formulations for enhancing wound healing are also provided. Wounds to both soft and bony tissues are encompassed, and include wounds created by surgical procedures.
|Methods for manufacturing a regenerated tooth unit|| 20130089827 || 20130411 |
| A method for manufacturing a regenerated tooth unit comprising a step of disposing and culturing a regenerated tooth germ inside a spacer in vivo in the body of a mammal is provided, wherein said spacer is configured so as to enable prevention of said regenerated tooth germ being extended to more than the maximum tolerance; and configured such that the regenerated tooth germ disposed inside is communicatable with the exterior of the spacer.
|Identification, proliferation in situ, harvesting, separation, and transplantation of adult-derived regenerative pluripotent transitional blastomere-like stem cells and methods of treatment thereof|| 20130071357 || 20130321 |
| Non-embryonic transitional blastomere-like stem cells are disclosed. Most preferably, such cells are obtained from the blood after induction by a plant-based compound to proliferate and reverse diapadese into the vasculature or from various tissues of postnatal mammals or humans (using tissue biopsied from the mammal or human), are in the range of 3-5 microns, have a normal karyotype, and do not spontaneously differentiate in situ (in vivo) or in serum-free medium without differentiation inhibitors. These non-embryonic transitional blastomere-like stem cells typically express CD66e, CEA-CAM-1, CD10, SSEA (SSEA-1, SSEA-3, and SSEA-4), telomerase, Sonic hedgehog, but do not typically express Nanog, Nanos, BCl-2 or CXCR-4. Such transitional blastomere-like pluripotent stem cells can be differentiated into epiblast-like stem cells, ectodermal, mesodermal, and endodermal tissues, but NOT placental tissues or...|
|Compositions and methods for growing human embryonic cells|| 20130071926 || 20130321 |
| Methods for deriving and cultivating human embryonic stem (ES) cells and maintaining their pluripotency in culture is provided by utilizing secreted products obtained from the culture medium of human embryonic germ (EG) cell derivatives, such as embryoid body-derived cells. Substrates include compounds such as collagen I, fibronectin, or superfibronectin, or extracellular matrix, typically human derived.
|Composition for preventing and improving metabolic syndrome|| 20130065821 || 20130314 |
| A method for improving blood HDL/LDL cholesterol ratio, reducing blood triglyceride level, reducing blood sugar level, and/or reducing body weight, that includes ingesting a composition containing a concentrated soybean germ product. The soybean germ product includes soybean germ protein; 1.0% by weight or less of saponin relative to the total weight of the soybean germ product; and 0.5% by weight or less of isoflavone relative to the total weight of the soybean germ product.
|Method for facilitating the production of differentiated cell types and tissues from embryonic and adult pluripotent and multipotent cells|| 20130058900 || 20130307 |
| The invention is concerned with producing differentiated cells, tissues and organs from pluripotent and mutlipotent cells. The methods of the invention are particularly useful for producing differentiated cells from pluripotent cells wherein communication between the cells of more than one embryonic germ layer or more than one organ system are required for development along a specific cell lineage. The invention methods are effected by in vivo or in vitro culturing of embryonic and developing or developed allogeneic or xenogeneic cells.
|Method for the production of an aqueous glucose solution|| 20130059332 || 20130307 |
| The present invention relates to a process for the production of an aqueous glucose solution from maize or maize kernels. The invention also relates to a glucose solution obtainable by this process, and to its use for the production of organic compounds. The process according to the invention comprises: a) fractionating dry milling of maize kernels, where the maize kernels are separated into a maize-starch-comprising endosperm fraction and a high-oil germ fraction and, if appropriate, a bran fraction; b) enzymatic liquefaction and saccharification of the maize starch in an aqueous suspension of the endosperm fraction, which gives an aqueous glucose solution comprising maize gluten; and c) depletion of the maize gluten and, if appropriate, any bran present from the aqueous glucose solution.
|Compositions and methods for enhancing bioenergetic status in female germ cells|| 20130059384 || 20130307 |
| Compositions and methods comprising bioenergetic agents for restoring the quality of aged oocytes, enhancing oogonial stem cells or improving derivatives thereof (e.g., cytoplasm or isolated mitochondria) for use in fertility-enhancing procedures, are described.
Subscribe to updates on this page: Germ RSS
|Cell free translation system for compound screening and related uses|| 20130053267 || 20130228 |
| The invention provides a cell-free system comprising not more than about 5% wheat germ extract for expressing proteins such as viral proteins and proteins required for viral capsid assembly, and proteins that assemble into multiprotein complexes in a manner analogous to viral capsids, are provided. Further provided are methods for expressing proteins such as viral proteins, proteins required for capsid assembly, and proteins that assemble into multiprotein complexes in a manner analogous to viral capsids using a cell-free system comprising not more than about 5% wheat germ extract. Further provided are methods to assay for compounds that modulate viral protein, viral capsid assembly, and assembly of proteins into multiprotein complexes whose disruption can ameliorate bacterial, parasitic, metabolic, oncologic, immunologic, or CNS disease in a cell-free system...|
|Method and kit for determining sensitivity to decitabine treatment|| 20130023439 || 20130124 |
| The present invention is a gene expression panel of chemotherapeutic drug-resistant cancer stem cells comprising RIN1, SOX15 and TLR4. In one embodiment the cancer stem cells are testicular cancer germ cells. The present invention provides for a kit and method for determining response to treatment with decitabine at low doses.
|Sterilization effects of acidic ozone water|| 20130011306 || 20130110 |
| The present invention relates to an apparatus for sterilization of various microbes including toxic biological agents, by abundantly producing the acidic ozone water that very effectively kills spores of Bacillus atrophaeus. The sterilization effectiveness of the acidic ozone water is due to synergic benefits derived from the combination of ozone and acidity in water. The acidic ozone water produced from the apparatus of the present invention can effectively kill most of the microbes of viruses, bacteria, and fungi, hence being applicable to agriculture, seafood and livestock industries for the preservation of various products as well as being useful in hospitals or other germ infested areas for disinfections. After the decontamination process, the acidic ozone water produced from the apparatus of the present invention disintegrates into water...|
|Primate embryonic stem cells|| 20120328582 || 20121227 |
| A purified preparation of primate embryonic stem cells is disclosed. This preparation is characterized by the following cell surface markers: SSEA-1 (−); SSEA-4 (+); TRA-1-60 (+); TRA-1-81 (+); and alkaline phosphatase (+). In a particularly advantageous embodiment, the cells of the preparation are human embryonic stem cells, have normal karyotypes, and continue to proliferate in an undifferentiated state after continuous culture for eleven months. The embryonic stem cell lines also retain the ability, throughout the culture, to form trophoblast and to differentiate into all tissues derived from all three embryonic germ layers (endoderm, mesoderm and ectoderm). A method for isolating a primate embryonic stem cell line is also disclosed.
|Method for increasing the activity of superoxide dismutase|| 20120329131 || 20121227 |
| A method for increasing the activity of superoxide dismutase comprises steps of: liquid culture, by providing a strain of Bacillus subtilis and a liquid medium to carry out a fed-batch fermentation and to obtain a primary fermentation broth, wherein the liquid medium has 8 wt % to 10 wt % of maltose, 10 wt % to 15 wt % of soya powder and rest of water; and solid culture, by culturing the primary fermentation broth in a solid medium, which has solid substrate and maltose in a ratio of 10:1 to 20:1, to obtain a secondary fermentation broth with SOD in high activity, wherein the solid substrate contains wheat germ and water.
|Grain fraction endosperm recovery system|| 20120312905 || 20121213 |
| Generally, a dry-wet grain fractionation system which provides a dry mill process (26) for the production of grain fractions (14) (15) (16) and a wet mill process (18) for the production of purified bran (19), endosperm (20) and germ (21) from the mixture of grain particles in a grain fraction (14) (15) or (16) or combinations thereof. Specifically, a dry-wet grain fractionation system for production of corn germ (21) having increased protein and oil content and an endosperm (20) having increased starch and sugar content.
|Method for acquiring genetically identical gamete from lethal fish haploid-derived germ cell via germ line chimera|| 20120304322 || 20121129 |
| Disclosed are a method for acquiring a germ line chimeric fish having fish haploid germ cells, a germ line chimeric fish having haploid germ cells obtained by the aforesaid method, and a genetically identical gamete, said gamete having been derived from a donor haploid germ cell, produced by a germ line chimeric fish obtained by the aforesaid method.
|Maternally induced sterility in animals|| 20120304323 || 20121129 |
| The present invention provides Maternal Sterility Constructs (MSC) and methods of producing sterile progeny lacking germ cells. Female animals carrying the MSC transgene will give rise to a sterile generation, as the MSC specifically eliminates Progenitor Germ Cells (PGCs) of her progeny. These females are called lineage ending females. Male animals carrying the MSC transgene, however, give rise to fertile progeny (assuming the male is not derived from an MSC-transgenic female). Thus, MSC transgenic males can be used to propagate the transgenic line. The invention can be advantageously applied to eliminate pest or invasive species, or to provide effective population control and improve culture performance of farmed species, such as fish and shellfish.
|Animal litter, process for preparing animal litter, and method for removal of animal waste|| 20120288468 || 20121115 |
| Disclosed are animal litters, processes for preparing animal litters, and methods for removal of animal waste. The disclosed animal litters are made from ingredients including virgin germ and have a total fat content of about 0.5 to about 15 based on the weight of the litter. The litters are provided in the form of discrete plural particles which tend to agglomerate when wetted.
|Phasor method to fluorescence lifetime microscopy to discriminate metabolic state of cells in living tissue|| 20120276578 || 20121101 |
| “A label-free imaging method to monitor stem cell metabolism discriminates different states of stem cell as they differentiate in a living tissues. We use intrinsic fluorescence biomarkers and the phasor approach to Fluorescence Lifetime Imaging Microscopy (FLIM). We identify and map intrinsic fluorophores such as collagen, retinol, retinoic acid, flavins, nicotinamide adenine dinucleotide (NADH) and porphyrin. We measure the phasor values of germ cells in C. Elegans germ line. Their metabolic fingerprint cluster according to their differentiation state, reflecting changes in FAD concentration and NADH binding during the differentiation pathway. The phasor approach to lifetime imaging provides a label-free, fit-free and sensitive method to identify different metabolic state of cells during differentiation, to sense small changes in the redox state of cells and may identify symmetric...|
|Dry grind ethanol production process and system with front end milling method|| 20120244590 || 20120927 |
| A dry grind ethanol production process and system with front end milling method is provided for improving alcohol and/or by-product yields, such as oil and/or protein yields. In one example, the process includes grinding corn kernels into particles then mixing the corn particles with a liquid to produce a slurry including oil, protein, starch, fiber, germ, and grit. Thereafter, the slurry is subjected to a front end milling method, which includes separating the slurry into a solids portion, including fiber, grit, and germ, and a liquid portion, including oil, protein, and starch, then milling the separated solids portion to reduce the size of the germ and grit and release bound starch, oil, and protein from the solids portion. The starch is converted to sugar, and alcohol...|
|Novel pacemaker cell|| 20120231450 || 20120913 |
| The present invention provides a pacemaker cell which possesses HCN4 channel and Na channel, the beating rate of which can be controlled by regulation of Na channel, wherein the cell is derived from embryonic stem (ES) cells, induced pluripotent stem (iPS) cells, or primordial germ cell-derived versatile cells. The present invention also provides a cardiac pacemaker comprising the pacemaker cell.
|Induction of germ cells from pluripotent cells|| 20120231451 || 20120913 |
| Methods and compositions are provided for promoting germ cell differentiation from pluripotent cells, and for identifying agents that modulate germ cell differentiation.
|Methods and compositions for producing germ cells from peripheral blood derived germline stem cells|| 20120195861 || 20120802 |
| Described herein are the use of peripheral blood derived germline stem cells and their progenitors, methods of isolation thereof, and methods of use thereof.
|Production of stabilized whole grain wheat flour and products thereof|| 20120196013 || 20120802 |
| A stabilized bran component and stabilized whole grain wheat flour containing the component are produced by subjecting a bran-enriched coarse fraction which contains bran, germ and starch to grinding or milling to reduce grittiness of the coarse fraction without substantially damaging the starch due to abrasion. The coarse fraction may be stabilized by heating to substantially reduce the lipase and lipoxygenase activity of the coarse fraction without substantial starch gelatinization. High levels of natural antioxidants and vitamins are retained while avoiding substantial acrylamide formation during the stabilization. The stabilized coarse fraction or stabilized bran component may be combined with a fine fraction which contains predominantly endosperm to obtain a stabilized whole grain wheat flour. The stabilized whole grain wheat flours and stabilized bran component exhibit extended...|
|Method for producing transgenic surface layer chimeric plant|| 20120198589 || 20120802 |
| A rose is produced in which an introduced gene is only present in a part of the cells thereof, such as cells of the L1 layer of flower petals, but is not present in germ cells such as pollen cells or ovule cells. Since the introduced gene is not propagated to other roses even when this rose is crossed with other roses, the possibility of dispersal of the introduced gene can be completely negated.
|Production of stabilized whole grain flour and products thereof|| 20120189757 || 20120726 |
| A stabilized bran component and a stabilized whole grain flour containing the component are produced by subjecting a bran-enriched coarse fraction which contains bran, germ and starch to grinding or milling to reduce grittiness of the coarse fraction without substantially damaging the starch due to abrasion. The coarse fraction may be stabilized by heating to substantially reduce the lipase and lipoxygenase activity of the coarse fraction without substantial gelatinization of the starch. High levels of natural antioxidants and vitamins are retained while avoiding substantial acrylamide formation during the stabilization. The stabilized coarse fraction or stabilized bran component may be combined with a fine fraction which contains predominantly endosperm to obtain a stabilized whole grain flour. The stabilized whole grain flours and the stabilized bran component exhibit...|
| Control of endogenous dnmt1 gene expression by exogenous binary regulatory systems|| 20110016548 || 20110120 |
| Provided are methods for controlling endogenous gene expression comprising control of the DNA methyltransferase (Dnmt1) for modulation of DNA methylation and epigenetic mechanisms. Provided are transcriptional regulatory systems involving multiple (e.g., three) exogenous binary systems, lacI, tetR and Gal4, for reversible up/down regulation of endogenous target genes Provided are lac operator and repressor modifications for improved repression relative to wild type (WT) lac and tet systems. Provided are endogenous Dnmt1 promoter modifications, comprising targeted lac operator sequences that do not significantly alter promoter activity absent repressors, yet show substantially reduced expression of the targeted allele upon lac repressor introduction. The lacO targeted Dnmt1 allele is introducible into the mouse germline, to provide a respective upregulatable transcriptional control system in vivo (e.g., two binary systems, tet operator/tetVP16...|
| Composite material consisting of a metal matrix in which synthetic lamellar phyllosilicated nanoparticles are distributed|| 20110015102 || 20110120 |
| A composite material includes a metal matrix in which synthetic lamellar phyllosilicated mineral particles are distributed. The lamellar phyllosilicated mineral particles are particles also called synthetic phyllosilicated nanoparticles (6) that are mineral, silico/germano-metal, lamellar, synthetic and hydrophilic, and have an average size of between 10 nm and 1 μm. A substrate that includes a lubricating coating consisting of such a material, and an electrolytic deposition preparation method are also described.
| Method of fabricating semiconductor device|| 20110014781 || 20110120 |
| According to one embodiment, a method of fabricating a semiconductor device includes forming a first insulator on a semiconductor substrate, forming a first groove on the insulator to expose at least a part of the semiconductor substrate at a bottom of the first groove, forming a first embedding film including at least germanium in the groove, melting the first embedding film by heat treatment, and crystallizing the first embedding film being melted to a single-crystalline film using the semiconductor substrate as a seed.
| Toner and toner manufacturing method|| 20110014561 || 20110120 |
| Provided are a toner and a toner manufacturing method with which high image density and a broad range of color reproduction are obtained, and with which high-quality images are also obtained. The toner is composed of toner particles that comprise a binding resin containing a polyester resin and a colorant, and contains 10-1,500 ppm of a metal element selected from titanium, germanium, and aluminum, and a cyclic phenol sulfide represented by general formula (1) selected from thiacalixarene, sulfinyl thiacalixarene and sulfonyl thiacalixarene.
| Semiconductor device and method for manufacturing the same|| 20110012207 || 20110120 |
| A semiconductor device includes a PMOS transistor of a peripheral circuit region. The PMOS transistor is formed over a silicon germanium layer to have a compressive strain structure, thereby increasing hole mobility of a channel region in operation of the device. The semiconductor device may include a second active region including a silicon layer connected to a first active region of a semiconductor substrate, a silicon germanium layer formed over the silicon layer expected to be a PMOS region, and a PMOS gate formed over the silicon germanium layer.
| Structure and method for forming field effect transistor with low resistance channel region|| 20110012174 || 20110120 |
| A trench-gate field effect transistor includes trenches extending into a silicon region of a first conductivity type, and a gate electrodes in each trench. Body regions of second conductivity type extend over the silicon region between adjacent trenches. Each body region forms a PN junction with the silicon region. A gate dielectric layer lines at least upper sidewalls of each trench, and insulates the gate electrode from the body region. Source regions of the first conductivity flank the trenches. A silicon-germanium region vertically extends through each source region and through a corresponding body region, and terminates within the corresponding body region before reaching the PN junction.
| Silicon-germanium nanowire structure and a method of forming the same|| 20110012090 || 20110120 |
| A silicon-germanium nanowire structure arranged on a support substrate is disclosed, The silicon-germanium nanowire structure includes at least one germanium-containing supporting portion arranged on the support substrate, at least one germanium-containing nanowire disposed above the support substrate and arranged adjacent the at least one germanium-containing supporting portion, wherein germanium concentration of the at least one germanium-containing nanowire is higher than the at least one germanium-containing supporting portion. A transistor comprising the silicon-germanium nanowire structure arranged on a support substrate is also provided. A method of forming a silicon-germanium nanowire structure arranged on a support substrate and a method of forming a transistor comprising forming the silicon-germanium nanowire structure arranged on a support substrate are also disclosed.
| Im-18 crystalline solid and process for its preparation|| 20110011810 || 20110120 |
| The invention concerns a crystalline solid designated IM-18 which has the X-ray diffraction diagram given below. Said solid has a chemical composition expressed by the empirical formula: mXO2:nGeO2:pZ2O3:qR:sF:wH2O, in which R represents one or more organic species, X represents one or more tetravalent element(s) other than germanium, Z represents at least one trivalent element and F is fluorine.
| Starch branching enzyme|| 20110010807 || 20110113 |
| This invention relates to a new starch branching enzyme, and to the gene encoding the enzyme. In particular, the invention provides a new starch branching enzyme type II from wheat, the nucleic acid encoding the enzyme, and constructs comprising the nucleic acid. The invention also relates to a novel method for identification of branching enzyme type II proteins, which is useful for screening wheat germplasm for null or altered alleles of wheat branching enzyme IIb. The novel gene, protein and methods of the invention are useful in production of plants which produce grain with novel properties for food and industrial applications, for example wheat grain containing high amylose or low amylopectin starch.
| Methods and compositions for increased yield|| 20110010793 || 20110113 |
| The invention overcomes the deficiencies of the art by providing methods for breeding soybean plants containing genomic regions associated with the pubescence alleles, T and Td, associated with increased grain yield. In addition, the invention provides the locus for Td. Moreover, the invention includes germplasm and the use of germplasm containing genomic regions conferring increased yield for introgression into elite germplasm in a breeding program. Moreover, the invention provides methods of purifying soybean breeding lines for such traits as flower color and pubescence color at early stages, such as seed. The invention also provides derivatives, and plant parts of these plants and uses thereof.
| Method for reprogramming in vitro stem cells and somatic cells into germinal cells|| 20110010783 || 20110113 |
| Germinal cells such as obtained and chimeric animals are also an object of this invention.
| Methods and systems for sequence-directed molecular breeding|| 20110010102 || 20110113 |
| The present invention provides breeding methods and compositions to enhance the germplasm of a plant by the use of direct nucleic acid sequence information. The methods describe the identification and accumulation of preferred nucleic acid sequences in the germplasm of a breeding population of plants.
| Thin film and method for manufacturing semiconductor device using the thin film|| 20110008938 || 20110113 |
| Disclosed is a thin film which is used in the production process of a semiconductor device. The thin film contains germanium, silicon, nitrogen and hydrogen.
| Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications|| 20110008937 || 20110113 |
| A method to provide a transistor or memory cell structure. The method comprises: providing a substrate including a lower Si substrate and an insulating layer on the substrate; providing a first projection extending above the insulating layer, the first projection including an Si material and a Si1-xGex material; and exposing the first projection to preferential oxidation to yield a second projection including a center region comprising Ge/Si1-yGey and a covering region comprising SiO2 and enclosing the center region.
| Antimicrobial composition and methods and apparatus for use thereof|| 20110008469 || 20110113 |
| There is presented an alkaline disinfectant in the form of a multi-component composition, with each component being relatively benign until mixed with the other components in a ready-to-use solution. The invention further relates to the use of the composition in a variety of applications and apparatus for mixing and dispensing thereof. Furthermore, the invention relates to the use of components that synergistically provide effective biocidal activity in a broad spectrum of organisms, including germs, molds, viruses, bacteria, bacteria spores, or other microbes or pathogens. The composition provides a chemical system that kills all known plants, animals and microbes by raising pH and rapidly, but indirectly, transporting hydroxide into cells by use of ammonia compounds and/or amine compounds as neutral transporters. The composition components synergistically operate together...|
| Production of a viable, storable worm egg suspension|| 20110008390 || 20110113 |
| The present application describes a novel, advantageous purification method which guarantees the embryonation capability and the viability of a worm egg suspension. The T. suis worm eggs are first treated in a non-embryonated condition in a sulfuric acid solution at about=ph 2. Bacteria and viruses are thereby killed successfully. The germination number of yeasts and fungi is reduced. In a second step, the pH-value is increased and an orally tolerated preservative is added. Yeasts and fungi are thereby killed successfully. The suspension medium used in the second purification step can then be used as a culture medium for additional production (embryonation) and storage.
| Non-porous material as sterilization barrier|| 20110008206 || 20110113 |
| The invention provides a device comprising a sealed interior portion with at least one opening covered by a sterilization barrier formed from a non-porous material allowing a sterilization gas to penetrate but prevents germs from penetrating. The size and configuration of the at least one sterilization barrier formed from a non-porous material are adapted to allow at least 50% of the sterilization gas, that would pass between a sterilization gas-containing exterior and the sealed interior portion when a pressure difference is created there between, to pass through the non-porous material.
| Process, apparatus, and material for making silicon germanium core fiber|| 20110006398 || 20110113 |
| A process and apparatus for making silicon or silicon/germanium core fiber is described, which uses a plasma process with reducing agent to make preform. The process also makes the recommendations in selecting the adequate cladding tube for better fiber properties. An improved fiber drawing apparatus is also disclosed in order to draw this new type of preforms.
| Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping|| 20110006370 || 20110113 |
| The invention relates to a method for selective deposition of Si or SiGe on a Si or SiGe surface. The method exploits differences in physico-chemical surface behaviour according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake step at a temperature lower or equal than 800° C., a subsequent deposition step of Si or SiGe will not lead to a layer deposition in the first surface region. This effect is used for selective deposition of Si or SiGe in the second surface region, which is not doped with Boron in the suitable...|
| Field effect transistor having channel silicon germanium|| 20110006349 || 20110113 |
| Field effect transistors and methods of making field effect transistors are provided. The field effect transistor can contain a semiconductor substrate containing shallow trench isolations; a silicon germanium layer in a trench at an upper surface of the semiconductor substrate between the shallow trench isolations; a gate feature on the silicon germanium layer; and metal silicides on the upper potions of silicon germanium layer and semiconductor substrate that are not covered by the gate feature. The silicon germanium layer has a bottom surface and a top surface having a (100) plane and side surfaces having two or more planes.
| Rounded three-dimensional germanium active channel for transistors and sensors|| 20110006348 || 20110113 |
| A process is provided for fabricating rounded three-dimensional germanium active channels for transistors and sensors. For forming sensors, the process comprises providing a crystalline silicon substrate; depositing an oxide mask on the crystalline silicon substrate; patterning the oxide mask with trenches to expose linear regions of the silicon substrate; epitaxially grow germanium selectively in the trenches, seeded from the silicon wafer; optionally etching the SiO2 mask partially, so that the cross section resembles a trapezoid on a stem; and annealing at an elevated temperature. The annealing process forms the rounded channel. For forming transistors, the process further comprises depositing and patterning a gate oxide and gate electrode onto this structure to form the gate stack of a MOSFET device; and after patterning the gate, implanting dopants...|
| Method for improving transistor performance through reducing the salicide interface resistance|| 20110006344 || 20110113 |
| An embodiment of the invention reduces the external resistance of a transistor by utilizing a silicon germanium alloy for the source and drain regions and a nickel silicon germanium self-aligned silicide (i.e., salicide) layer to form the contact surface of the source and drain regions. The interface of the silicon germanium and the nickel silicon germanium silicide has a lower specific contact resistivity based on a decreased metal-semiconductor work function between the silicon germanium and the silicide and the increased carrier mobility in silicon germanium versus silicon. The silicon germanium may be doped to further tune its electrical properties. A reduction of the external resistance of a transistor equates to increased transistor performance both in switching speed and power consumption.
| Photovoltaic device and manufacturing method thereof|| 20110005588 || 20110113 |
| A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer; wherein the light absorbing layer includes the first sub-layer and the second sub-layer, the first sub-layer including hydrogenated micro-crystalline silicon germanium (μc-SiGe:H) and an amorphous silicon germanium network (a-SiGe:H) formed among the hydrogenated micro-crystalline silicon germaniums, the second sub-layer including hydrogenated micro-crystalline silicon (μc-Si:H) and an amorphous silicon network (a-Si:H) formed among the hydrogenated micro-crystalline silicons.
| Atomizer, and filter|| 20110005517 || 20110113 |
| Disclosed are an atomizer for a fluid, especially for medical aerosol therapy, and a filter for said atomizer in order to prevent germs from spreading. The atomizer comprises a protective device for preventing germs from infesting the preferably preservative-free fluid. Particularly the filter can be used as a protective device. This prevents germs from infesting the fluid during the service life of the atomizer even when the atomizer is used several times.
| Disposable scrub gloves|| 20110005017 || 20110113 |
| A disposable glove or mitten made of plastic material having a scrub pad attached in the center. This glove is disposed or after each use to help fight bacteria and germs. The glove is one hundred percent water proof The gloves protect from water, chemicals, and other matter that can harm the hands. The pad has a cleaning agent that is activated when mixed with water. (Wet and Wipe) The pad comes in three separate abrasions (Soft, Medium, and hard). The soft pad which is towel like is used to clean house hold items such as spots on floors, decks, etc. The hard pad is used on very rough surfaces such as barb-b-que grills, cooking surfaces, brick walls and commercial use.
| Crystalline composition, preparation and use|| 20110004042 || 20110106 |
| A porous crystalline composition having a molar composition as follows: YO2:mX2O3:nZO, wherein Y is a tetravalent element selected from the group consisting of silicon, germanium, tin, titanium and combinations thereof, X is a trivalent element selected from the group consisting of aluminum, gallium, boron, iron and combinations thereof, Z is a divalent element selected from the group consisting of magnesium, zinc, cobalt, manganese, nickel and combinations thereof, m is between about 0 and about 0.5, n is between about 0 and about 0.5; and the composition has an x-ray diffraction pattern which distinguishes it from the materials. A process for making the composition, and a process using the composition to treat an organic compound are also provided.
| Use of solutions of mint oil or of l-carvone for the fungicidal and/or anti-germinating treatment of bulbs and/or tubers|| 20110003694 || 20110106 |
| The present invention relates to a novel method of treating bulbs or tubers with L-carvone and/or mint oil by thermal fogging.
| Germanium-containing dielectric barrier for low-k process|| 20110003474 || 20110106 |
| A semiconductor structure and methods of forming the same are provided. The semiconductor structure includes a semiconductor substrate; a first dielectric layer over the semiconductor substrate; a conductive wiring in the first dielectric layer; and a copper germanide nitride layer over the conductive wiring.
| Sealing arrangement for high-temperature fuel cell stack|| 20110003228 || 20110106 |
| Disclosed is a sealing assembly for metal components, wherein the sealing assembly has an electrical insulating effect, and wherein the sealing assembly comprises a ceramic layer and a base brazing material disposed thereon, to which germanium is added. The addition of germanium advantageously ranges from 0.1 to 5.0 mol %, and preferably between 0.5 and 2.5 mol %. A particular embodiment provides for the use of a brazing material which additionally comprises silicon in the range of>0 to 2.5 mol %, and preferably between 0.1 and 0.9 mol %. Furthermore, a brazing material having a further addition of 10 to 40% by volume of Al2TiO5, and preferably between 20 and 30% by volume of Al2TiO5, has proven to be particularly suited for the sealing assembly. The...|
| Soybeans having high germination rates and ultra-low raffinose and stachyose content|| 20110003045 || 20110106 |
| Soybean seeds having an ultra-low raffinose and stachyose phenotype. Also disclosed is a mutant allele of soybean designated SG-ULRFO which results in an ultra-low raffinose and stachyose phenotype. The present invention also relates to a soybean seed, a soybean plant and parts of a soybean plant and a soybean hybrid which comprises the mutant allele. Also disclosed are ultra-low raffinose and stachyose soybean seeds having unexpectedly increased germination rates when compared with soybean lines not having a low raffinose and stachyose seed content. Also disclosed are mutant RS3 and RS4 genes with polymorphisms which contribute to the ultra-low raffinose and stachyose phenotype as described in the present invention. The present invention also relates for method of using the soybean seeds and plants of the present invention,...|
| Klf6 alternative splice forms and a germline klf6 dna polymorphism associated with increased cancer risk|| 20090325150 || 20091231 |
| Disclosed are methods of identifying and diagnosing certain types of cancers and pre-stages thereof in a patient by identifying alternatively spliced isoforms of wild type KLF6 (KLFwt), in particular anyone of the isoforms selected from the group consisting of: KLF6 splice variant-1 (KLF6SV1), KLF6 splice variant-2 (KLF6SV2), and KLF6 splice variant-3 (KLF6SV3). Also disclosed are methods diagnosing cancer using the polypeptides and polynucleotides identified herein, as well as methods of treating certain types of cancers by inhibiting polynucleotides and polypeptides identified herein.
| Antimicrobial and sporicidal composition|| 20090324737 || 20091231 |
| Germicidal compositions with enhanced activity towards killing microbiological spores and vegetative cells comprising certain quaternary ammonium compounds (QACs), phenolic compounds, monohydric alcohols, hydrogen peroxide, iodine, triclocarban, triclosan or combinations thereof with one or more spore coat opening agents. The invention also provides for the application of the germicidal compositions to animate and inanimate surfaces to help kill germs and protect against the risk of infection from bacteria, molds, yeasts, fungi, viruses, and microbiological spores.
| Sterilization system and method and orifice inlet control apparatus therefor|| 20090324445 || 20091231 |
| A chemical vapor sterilization process is enhanced by concentrating a germicide via exploitation of the difference between the vapor pressures of the germicide and its solvent. A diffusion restriction can be placed into the diffusion path to assist this process and the path then opened to provide rapid diffusion of the thus concentrated germicide. The path through the diffusion restriction can be closed to allow the pressure in a sterilization chamber to be lowered prior to receiving the concentrated germicide.
| Semiconductor device|| 20090321880 || 20091231 |
| A semicoductor device includes: a collector layer made of a first conductivity type semiconductor; an intrinsic base layer formed on the collector layer and including a second conductivity type monocrystalline silicon germanium layer; a base extraction electrode formed around the intrinsic base layer and including a second conductivity type polycrystalline silicon layer and a second conductivity type polycrystalline silicon germanium layer; and a first conductivity type emitter layer formed in an upper portion of the intrinsic base layer. A silicon layer is formed in the upper portion of the intrinsic base layer and the emitter layer includes an upper emitter region formed in an upper portion of the silicon layer and a lower emitter region formed below and in contact with the upper emitter region.
| Cmos device comprising mos transistors with recessed drain and source areas and a si/ge material in the drain and source areas of the pmos transistor|| 20090321843 || 20091231 |
| The present disclosure relates to semiconductor devices and a process sequence in which a semiconductor alloy, such as silicon/germanium, may be formed in an early manufacturing stage, wherein other performance-increasing mechanisms, such as a recessed drain and source configuration, possibly in combination with high-k dielectrics and metal gates, may be incorporated in an efficient manner while still maintaining a high degree of compatibility with conventional process techniques.
| Selective formation of dielectric etch stop layers|| 20090321795 || 20091231 |
| Methods to selectively form a dielectric etch stop layer over a patterned metal feature. Embodiments include a transistor incorporating such an etch stop layer over a gate electrode. In accordance with certain embodiments of the present invention, a metal is selectively formed on the surface of the gate electrode which is then converted to a silicide or germanicide. In other embodiments, the metal selectively formed on the gate electrode surface enables a catalytic growth of a silicon or germanium mesa over the gate electrode. At least a portion of the silicide, germanicide, silicon mesa or germanium mesa is then oxidized, nitridized, or carbonized to form a dielectric etch stop layer over the gate electrode only.
| Fir anion automobile and ship tank|| 20090320944 || 20091231 |
| This is a FIR (Far Infrared Ray) anion tank for automobile and ship, and its raw materials are plastic and material that generate FIR anion under normal temperature, such as tourmaline, germanium ore powder, and other ore powders that generate FIR and anion under normal temperature. Automobile and Ship Tanks are tanks of automobiles, motorcycles and ships that consume gasoline or diesel oil as fuel. This kind of fuel tank has the advantages of saving fuel consumption and reducing the emission of exhaust. On the other hand, it is feasible to manufacture FIR and anion plastic, rubber or metal patch, sticking them on the outer or inner shell of the gasoline tank; it is also feasible to paste anticorrosive FIR anion coating on the on the...|
| Full-face germproof respirator|| 20090320835 || 20091231 |
| The present invention relates to a full-face germproof respirator, which comprises a respirator body and a three-dimensional mask. The three-dimensional mask is assembled on the respirator body. The full-face germproof respirator is disposable owing to its adoption of low-cost materials and fabrication. All joints of the full-face germproof respirator are heat-sealed, achieving excellent germproof effects. Besides, the full-face germproof respirator adopts the three-dimensional mask, and thereby mists produced by a user are reduced.
| Plant cultivation method and apparatus|| 20090320367 || 20091231 |
| Embodiments provide methods and apparatuses for supporting various stages of plant growth through layered soils. In embodiments, a soil adapted for supporting a first plant growth phase (e.g. germination) may be proximal, adjacent, or partially surrounded by a second soil adapted for supporting a subsequent growth phase (e.g. a vegetative phase) such that the roots of the plant encounter the second soil as the plant progresses from the first growth phase to the second growth phase. Some embodiments may provide one or more additional soil layers positioned proximal to the second soil, with the additional soil layers adapted to support additional subsequent plant growth phases. Apparatuses suitable for practicing embodiments of such methods are further provided.
| Synthesis and use of mse-framework type molecular sieves|| 20090318696 || 20091224 |
| in which R1 is hydrogen or an alkyl group, and R2 and R3 are alkyl groups.
| Antibacterial compositions comprising quaternary ammonium germicides and alkamine oxides having reduced irritation potential|| 20090318322 || 20091224 |
| Antibacterial compositions having antibacterial effectiveness and reduced eye irritation potential are disclosed. The antibacterial compositions contain a quaternary ammonium compound, an alkamine oxide, a nonionic compound, optional adjuvant materials known in the art, and water. The eye irritation is decreased by decreasing the amount, by weight, of alkamine oxide present in the composition and alternatively, or in combination therewith, increasing the ratio of nonionic material to alkamine oxide present in the composition.
| Fabric with a moistureproof, dustproof, and antibacterial|| 20090318046 || 20091224 |
| The present invention relates to a fabric having a three-layered structure: a fiber substrate, a parylene layer, and an antibacterial layer. The fiber substrate is the fiber part of the fabric; the parylene layer is capable of providing a moistureproof and dustproof effect as well as preventing the fiber substrate from being catalyzed by photocatalyst and decomposed thereby; the antibacterial layer, which comprises nano-photocatalyst and/or nano-silver particles, is used to kill pathogenic germs.
| Material with core-shell structure|| 20090317719 || 20091224 |
| Disclosed is a material having a composite particle. The composite particle includes an outer shell containing an element such as carbon, nitrogen, oxygen or sulfur and an inner core made from a lithium alloying material such as tin, silicon, aluminum and/or germanium. If the outer shell is made from carbon, the outer shell of the composite particle has an average thickness of less than 20 nanometers and the composite particle has an outer mean diameter of less than 100 nanometers. In some instances, the inner core is made from tin, a tin binary alloy, a tin tertiary alloy or a tin quaternary alloy.
| Hyperphosphatemia in domestic animals: compositions and methods of treatment|| 20090317352 || 20091224 |
| The present invention is generally related to the treatment of hyperphosphatemia in domestic animals. It is specifically directed to compositions containing phosphate binders that are palatable to domestic animals and methods using such compositions. In a composition aspect, the present invention provides a composition that includes: a rare earth compound (e.g., lanthanum oxycarbonate or lanthanum carbonate hydroxide), calcium salts (e.g, calcium carbonate or calcium acetate), aluminum salts (e.g., aluminum hydroxide or a hydrophilic exchange resin; and an ingredient of domestic animal food, wherein the ingredient is selected from a group consisting of chicken, beef, lamb, chicken meal or lamb meal, corn, rice, bone meal, fish meal, fish, egg product, beef, beef meal, corn gluten meal, poultry by-product meal, wheat flour, beef tallow, maple syrup, honey, apple,...|
| Variable karat gold alloys|| 20090317291 || 20091224 |
| A gold alloy that is usable for jewelry and other applications. The gold alloy is made by combining Y % gold with Z % of a master alloy, wherein Y+Z=100. The master alloy includes 16% silver, 71.771% copper, 12% zinc and 0.229% X, wherein X being selected from the group consisting of silicon, germanium, or mixtures thereof. The gold alloy may be made by first forming the master alloy and then mixing the gold with the master alloy. The gold alloy may also be made by mixing gold with the elements of the master alloy without first forming the master alloy.
| Transistor gate electrode having conductor material layer|| 20090315076 || 20091224 |
| Various embodiments of the invention relate to a PMOS device having a transistor channel of silicon germanium material on a substrate, a gate dielectric having a dielectric constant greater than that of silicon dioxide on the channel, a gate electrode conductor material having a work function in a range between a valence energy band edge and a conductor energy band edge for silicon on the gate dielectric, and a gate electrode semiconductor material on the gate electrode conductor material.
| Germicidal floor, germicidal foot, and hand cleaning system|| 20090314308 || 20091224 |
| A device for simultaneously cleaning hands and feet comprises a first housing and a second housing connected by a pole. An ultraviolet light source and a light reflector is disposed within each of the first and second housings. The ultraviolet light sources and light reflectors are adapted to direct ultraviolet light waves onto the hands and feet of an individual user of the device. The light waves kill or deactivate harmful germs or transmissible diseases disposed on the hands and/or carried by the feet or the socks of the individual, thereby preventing the harmful germs or transmissible diseases from spreading and causing harm to other individuals or animals.
| E.z. lift|| 20090313749 || 20091224 |
| The E-Z Lift would protect the user from coming into contact with germs and bacteria that are often found on the underside and top of the toilet seat. The E-Z Lift could be secured to the underside of the seat by way of self-adhesive gluestrips, or fasteners included for sale with the device.
| Gibberellin 2-oxidase genes and uses thereof|| 20090313725 || 20091217 |
| Novel gibberellin 2-oxidase (GA2ox) genes were identified. Differential expression of GA2ox genes correlated with flower development, seed germination, tiller growth and other developmental processes. In addition, the early and increased growth of tiller and adventitious root and altered root architecture caused by overexpression of GA2oxs further suggest the pleiotropic role of GA2oxs in controlling growth and architecture in plants such as rice. GA2ox5, GA2ox6 and GA2ox9 were three genes encoding class C20 GA2oxs in rice. Mutants or transgenic rice overexpressing class C20 GA2oxs exhibited a broad range of mutant phenotypes, including semi-dwarfism, increased root system and higher tiller numbers that may favor grain yield. Mutations in the conserved domain III were found to affect the physiological activity of class C20 GA2oxs.
| Selective activation of hydrogen passivated silicon and germanium surfaces|| 20090311875 || 20091217 |
| A method of selectively attaching a capping agent to an H-passivated Si or Ge surface is disclosed. The method includes providing the H-passivated Si or Ge surface, the H-passivated Si or Ge surface including a set of covalently bonded Si or Ge atoms and a set of surface substitutional atoms, wherein the set of surface substitutional atoms includes at least one of boron atoms, aluminum atoms, gallium atoms, indium atoms, tin atoms, lead atoms, phosphorus atoms, arsenic atoms, sulfur atoms, and bismuth atoms. The method also includes exposing the set of surface functional atoms to a set of capping agents, each capping agent of the set of capping agents having a set of functional groups bonded to a pair of carbon atoms, wherein the pair of...|
| Combination of avian cell markers|| 20090311682 || 20091217 |
| The present invention relates to a novel combination of avian cell markers which make it possible to characterize the said cells according to their phenotype, whether they are StX cells, stem cells or germ cells. The present invention also relates to a method for characterizing avian cells with the said markers, and to a method for culturing avian cells, in which the cells are characterized by the method according to the invention.
| Process for edible protein extraction from corn germ|| 20090311397 || 20091217 |
| A process for extraction of edible protein from corn germ. The process includes providing a defatted corn germ with a fat concentration of less than about 5% by weight, milling the corn germ to a granulation of less than about 100 US mesh at less than 180° F., preparing a slurry from the milled corn germ, extracting a edible protein solution from the slurry, recovering the edible protein by precipitating agents (ethanol, acids), and drying the edible protein. The resulting food is 80% to 90% protein.
| Uv sanitizer for tethered and untethered mouthguards|| 20090311149 || 20091217 |
| A portable, battery-powered UV sanitizer kills germs and bacteria on the mouthpieces of tethered mouthguards of a wide variety of tether sizes and configurations and on the mouthpieces of untethered mouthguards. It doubles as a protective case when not in antimicrobial use. It includes a dishwasher safe detachable tray. It may be used with other dental appliances.
| Semiconductor processing|| 20090309190 || 20091217 |
| A semiconductor product comprises an insulator layer and a SOI (Silicon On Insulator) layer on the insulator layer, wherein the SOI layer contains implanted Germanium (Ge) at or near the interface with the insulator layer so as to form gettering sites. The semiconductor product can be manufactured by ion implanting Germanium (Ge) into silicon material and bonding the silicon material onto a handle so as to form a SOI substrate.
| Germanium-enriched silicon material for making solar cells|| 20090308455 || 20091217 |
| Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. Common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, mainly increased material strength. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. A silicon material with a germanium concentration in the range (50-200) ppmw demonstrates an increased material strength, where best practical ranges depend on the material quality generated.
| Heterojunction with intrinsically amorphous interface|| 20090308453 || 20091217 |
| The invention relates to a structure (100) for photovoltaic applications including: a first layer (10) of a crystalline semiconductor material having a front face (1) for receiving and/or emitting photons and a back face (2); a back contact (40) of a conductive material provided on the side of the back face (2); characterised in that it further comprises a second layer (50) of hydrogenated amorphous silicon-germanium (a-SiGe:H) between the back face (2) of the first layer (10) and the back contact (40). The invention also relates to a method for realising said structure (100).
| Surface treatment system|| 20090308311 || 20091217 |
| A surface treatment system, particularly for painting, coating, drying and the associated preparation of metallic or nonmetallic objects, contains a circuit, in which a liquid is circulated. In order to sterilize the liquid, the invention provides that a device for mechanically/physically opening cell membranes is integrated in the circuit. The germs can be removed while not creating strains resistant to the sterilization.
| Method to identify disease resistant quantitative trait loci in soybean and compositions thereof|| 20090307799 || 20091210 |
| The present invention is in the field of plant breeding and genetics, particularly as it pertains to the genus, Glycine. More specifically, the invention relates to a method for screening soybean plants containing one or more quantitative trait loci for disease resistance, species of Glycine having such loci and methods for breeding for and screening of Glycine with such loci. The invention further relates to the use of exotic germplasm in a breeding program.
| Isolation of the t-complex distorters and applications thereof|| 20090307790 || 20091210 |
| The present invention relates to a method for producing a transgenic non human male animal, preferably a mammal, fish, bird or insect, wherein the transgene(s) confer(s) a change in the transmission ratio of (a) genetic trait(s) to the offspring of said non human male animal, preferably mammal, fish, bird or insect to a non-Mendelian ratio, said method comprising introducing (a) a first nucleic acid molecule encoding an expression product with a Responder function into a chromosome of a non-human germ cell, (fertilized) egg cell, embryonic cell or a cell derived therefrom, of the same species as the transgenic male to be prepared, said chromosome containing or conferring said genetic trait(s), thereby linking on said chromosome said Responder function to the genetic trait(s); and (b) at least...|
| Isoflavonoid compounds and use thereof|| 20090305895 || 20091210 |
| The use of a one or more Isoflavonoid compound Signals which may be with an agriculturally acceptable carrier, applied prior to planting, up to 365 days or more, either directly to the seed or transplant of a non-legume crop or a legume crop, or applied to the soil that will be planted either to a non-legume crop or a legume crop, for the purpose of increasing yield and/or improving seed germination and/or improving carrier seed emergence and/or improving modulation and/or increasing crop stand density and/or improving plant vigour and/or improving plant growth, and/or increasing biomass, and/or earlier fruiting, all including in circumstances of seeding and plant transplanting.
|Thermal expansion transition buffer layer for gallium nitride on silicon|| 20080315255 || 20081225 |
| A method is provided for forming a matching thermal expansion interface between silicon (Si) and gallium nitride (GaN) films. The method provides a (111) Si substrate with a first thermal expansion coefficient (TEC), and forms a silicon-germanium (SiGe) film overlying the Si substrate. A buffer layer is deposited overlying the SiGe film. The buffer layer may be aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN). A GaN film is deposited overlying the buffer layer having a second TEC, greater than the first TEC. The SiGe film has a third TEC, with a value in between the first and second TECs. In one aspect, a graded SiGe film may be formed having a Ge content ratio in a range of about 0% to 50%, where the Ge content...|
|Method of making nonvolatile memory device containing carbon or nitrogen doped diode|| 20080316795 || 20081225 |
| A method of making a nonvolatile memory device includes forming a first electrode, forming at least one nonvolatile memory cell comprising a silicon, germanium or silicon-germanium diode, doping the diode with at least one of nitrogen or carbon, and forming a second electrode over the at least one nonvolatile memory cell.
|Nonvolatile memory device containing carbon or nitrogen doped diode|| 20080316808 || 20081225 |
| A nonvolatile memory device includes at least one nonvolatile memory cell which comprises a silicon, germanium or silicon-germanium diode which is doped with at least one of carbon or nitrogen in a concentration greater than an unavoidable impurity level concentration.
|Human artificial chromosome containing human antibody lambda light chain gene and non-human animal containing the human artificial chromosome capable of genetic transmission|| 20080317743 || 20081225 |
| The present invention relates to a human artificial chromosome which is genetically transmissible to the next generation with high efficiency and the method for using the same. More specifically, the present invention relates to: a human artificial chromosome in which an about 3.5 Mb to about 1 Mb region containing an antibody λ light chain gene derived from human chromosome 22 is bound to a chromosome fragment which is transmissible to a progeny through a germ line of a non-human animal, said chromosome fragment is derived from another human chromosome; a non-human animal carrying the human artificial chromosome and an offspring thereof; a method for producing the non-human animal; a method for producing a human antibody using the nonhuman animal or an offspring thereof; and a...|
|Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions|| 20080318385 || 20081225 |
| The present invention relates to a Tunnel Field Effect Transistor (TFET), which utilizes angle implantation and amorphization to form asymmetric source and drain regions. The TFET further comprises a silicon germanium alloy epitaxial source region with a conductivity opposite that of the drain.
|Metal oxide semiconductor field effect transistor and method of fabricating the same|| 20080318386 || 20081225 |
| There are provided a MOSFET and a method for fabricating the same. The MOSFET includes a semiconductor substrate, a germanium layer formed by implanting germanium (Ge) ions into the semiconductor substrate, an epitaxial layer doped with high concentration impurities over the germanium layer, a gate structure on the epitaxial layer, and source/drain regions with lightly doped drain (LDD) regions in the semiconductor substrate. The germanium layer supplies carriers into the epitaxial layer so that short channel effects are reduced.
|Junction diode with reduced reverse current|| 20080318397 || 20081225 |
| A method for annealing a diode formed of a silicon-germanium alloy that minimizes leakage current is disclosed. The method includes the steps of forming semiconductor pillars of an alloy of silicon and germanium; heating the pillars at a first temperature for at least 30 minutes, and then heating the pillars at a second temperature higher than the first temperature of the alloy for up to 120 seconds. The invention further includes a monolithic three dimensional memory array of a plurality of p-i-n diodes, the p-i-n diodes being formed of a silicon-germanium alloy that have been subjected to a two-stage heating process.
|Germination acceleration|| 20080318782 || 20081225 |
| A composition comprising an effective amount of GA4/7 (gibberellin 4 and gibberellin 7) or GA3 (gibberellic acid) and 6BA (benzyladenine) is used as a seed treatment on sweet and field corn (Zea mays) to accelerate plant establishment and to promote low temperature germination and emergence.
|Seed germination acceleration|| 20080318789 || 20081225 |
| The present invention is generally directed to the use of gibberellin 4/7 (GA4/7) in the field of seed treatment, specifically to accelerate crop germination.
|Diagnostic and therapeutic use of a novel growth factor, neublasmin|| 20080318853 || 20081225 |
| The present invention relates to the field of diagnostic and therapeutic use of proteins and genes, in particular to the diagnostic and therapeutic use of a secreted human hormone/growth factor, Neublasmin, and use or the gene coding for Neublasmin in the diagnosis and treatment of testicular disorders, in particular diagnosis and treatment of germ cell tumours and infertility. The invention also relates to use of Neublasmin in the treatment of CNS disorders. Neublasmin is expressed at high levels in human adult testicles and in developing mouse testicles from pn 22 and onwards. Expression or Neublasmin is strongly up-regulated in carcinoma in situ. Expression is also seen in foetal and adult brain.
|System for transmitting syndicated programs over the internet|| 20080319828 || 20081225 |
| A system and method are provided for exposing Internet users to advertisements together with the distribution of media content in a manner which is germane to conventional syndicated broadcast agreements. The system includes a processor coupled to a memory device. The system further includes software means operable on the processor and memory device. The software means is operable on the processor for obtaining a user specific set of data prior to distributing a media package. The software means is operable for selecting a number of advertisements from a data bank containing a plurality of advertisements based on the user specific set of data. The software means is operable for combining the selected number of advertisements with a requested set of media content to form the media...|
|Forming silicides with reduced tailing on silicon germanium and silicon|| 20080308842 || 20081218 |
| A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; an epitaxial region having at least a portion in the semiconductor substrate and adjacent to the gate stack, wherein the epitaxial region comprises an impurity of a first conductivity type; a first portion of the semiconductor substrate adjoining the epitaxial region, wherein the first portion of the semiconductor substrate is of the first conductivity type; and a second portion of the semiconductor substrate adjoining the first portion. The second portion of the semiconductor substrate is of a second conductivity type opposite the first conductivity type. A silicide region is formed on the epitaxial region and the first and the second portions of the semiconductor substrate.
|Heterogeneous group iv semiconductor substrates|| 20080308845 || 20081218 |
| Embodiments of the present invention include heterogeneous substrates, integrated circuits formed on such heterogeneous substrates. The heterogeneous substrates according to certain embodiments of the present invention include a first Group IV semiconductor layer (e.g., silicon), a second Group IV pattern (e.g., a silicon-germanium pattern) that includes a plurality of individual elements on the first Group IV semiconductor layer, and a third Group IV semiconductor layer (e.g., a silicon epitaxial layer) on the second Group IV pattern and on a plurality of exposed portions of the first Group IV semiconductor layer. The second Group IV pattern may be removed in embodiments of the present invention. In these and other embodiments of the present invention, the third Group IV semiconductor layer may be planarized.
|Polycrystalline thin film bipolar transistors|| 20080308903 || 20081218 |
| A semiconductor device comprising a bipolar transistor having a base region, an emitter region and a collector region, wherein the base region comprises polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide is described. The emitter region and collector region also may comprise polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide forming metal. The polycrystalline semiconductor material is preferably silicided polysilicon, which is formed in contact with C49 phase titanium silicide.
|Organic electroluminescent device|| 20080309228 || 20081218 |
| Provided is an organic electroluminescent device that brings together a high efficiency, high durability, and a high color purity. The organic electroluminescent device includes an anode, a cathode, and a layer including an organic compound interposed between the anode and the cathode, in which the layer contains at least one organic germanium compound having two or more fluorenyl groups per one germanium atom.
|Germicidal floor system (gfs)|| 20080310996 || 20081218 |
| A device for cleaning feet, socks, or shoes comprises a housing, a target surface, and at least one ultraviolet light source. The target surface is supported by the housing and is adapted to be walked upon by an individual. The at least one ultraviolet light source is supported by the housing and adapted to direct ultraviolet light waves onto the target surface such that the ultraviolet light waves interact with the feet of the individual walking upon the target surface. The light waves kill or deactivate harmful germs or transmissible diseases disposed on the target surface, or carried by the feet or the socks of the individual, thereby preventing the harmful germs from spreading and causing harm to other individuals or animals.
|Process for the production of ge by reduction of gecl4 with liquid metal|| 20080311027 || 20081218 |
| The invention relates to the manufacture of high purity germanium for the manufacture of e.g. infra red optics, radiation detectors and electronic devices. GeCl4 is converted to Ge metal by contacting gaseous GeCl4 with a liquid metal M containing one of Zn, Na and Mg, thereby obtaining a Ge-bearing alloy and a metal M chloride, which is removed by evaporation or skimming. The Ge-bearing alloy is then purified at a temperature above the boiling point of metal M. This process does not require complicated technologies and preserves the high purity of the GeCl4 in the final Ge metal, as the only reactant is metal M, which can be obtained in very high purity grades and continuously recycled.
|Cyanoacrylate adhesive compositions and devices and process for sterilization thereof|| 20080311323 || 20081218 |
| Disclosed are processes for sterilization of cyanoacrylate adhesive compositions; the compositions, comprising 2-cyanoacrylate ester monomers, so produced and a method for assaying the effectiveness of the sterilization process. A typical process comprises heating the adhesive composition to from about 70° C. to about 140° C. for an effective amount of time. The effectiveness of a process can be assayed by disposing bacterial spores in the cyanoacrylate monomer, exposing the composition to a dry heat sterilization process, transferring the cyanoacrylate composition to a sterile aldose solution, transferring and exposing the sample to a nutrient medium which supports germination and growth of viable spores, incubating the samples, and determining the presence or absence of growth.
|Methods and kits for detecting germ cell genomic instability|| 20080311565 || 20081218 |
| Disclosed are methods for detecting microsatellite instability in the germ line of males, methods of assessing risk for developing testicular cancer, methods of evaluating the microsatellite stability of putative cancer or precancerous cells or a tumor, methods for evaluating germ cells for exposure to mutagens, and kits for use in the methods of the invention.
|Method to form low-defect polycrystalline semiconductor material for use in a transistor|| 20080311710 || 20081218 |
| A method is described for forming a thin film transistor having its current-switching region in polycrystalline semiconductor material which has been crystallized in contact with titanium silicide, titanium silicide-germanide, or titanium germanide. The titanium silicide, titanium silicide-germanide, or titanium germanide is formed having feature size no more than 0.25 micron in the smallest dimension. The small feature size tends to inhibit the phase transformation from C49 to C54 phase titanium silicide. The C49 phase of titanium silicide has a very close lattice match to silicon, and thus provides a crystallization template for the silicon as it forms, allowing formation of large-grain, low-defect silicon. Titanium does not tend to migrate through the silicon during crystallization, limiting the danger of metal contamination. In preferred embodiments, the transistors thus...|
|Method for forming polycrystalline thin film bipolar transistors|| 20080311722 || 20081218 |
| A method is described for forming a semiconductor device comprising a bipolar transistor having a base region, an emitter region and a collector region, wherein the base region comprises polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide. The emitter region and collector region also may be formed from polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide forming metal. The polycrystalline semiconductor material is preferably silicided polysilicon, which is formed in contact with C49 phase titanium silicide.
|Metal-germanium physical vapor deposition for semiconductor device defect reduction|| 20080311747 || 20081218 |
| The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130) to form a metal-germanium alloy layer (140) on a semiconductor substrate (150). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400).
|Agent for treating oil-polluted ground, and for cleaning oil-contaminated surfaces and containers|| 20080312122 || 20081218 |
| The invention relates to a concentrate for the effective, environmentally friendly treatment of oil-polluted stretches of ground and the cleaning of oil-contaminated surfaces, said concentrate containing an emulsifier, a vegetable oil and ethanol. The emulsifier is preferably a non-ionic surfactant with an HLB value between 7 and 8. The vegetable oil is preferably selected so that it is liquid at temperatures above 5 DEG C. Oils containing unsaturated fatty acids, in particular germ oils are especially suitable. For its application as a treatment for stretches of ground, the inventive concentrate is diluted with water to form a cleaning solution and is applied to the oil-contaminated surface that is to be treated. The oil is emulsified in the inventive cleaning solution and is detached from the particles...|
|Tiolet seat with sanitary system|| 20080301867 || 20081211 |
| The invention presents a reversible (two sided) toilet seat with a sanitary system. The toilet seat, placed on top of a washing chamber, has two sides and, in the lifted position, can be rotated to allow use and washing of each side. The washing chamber is equipped with washing nozzles supplying washing fluid and a dryer/blower supplying drying air. After each use, the seat can be is lifted, rotated and placed back with the washed surface in seating position on the washing chamber and the used surface in the washing position. The lifting apparatus may be operated manually, by foot or power operated. In the reversed position, the washed side is ready to be used and the underside can be washed. Drying/blowing apparatus supplies air, preferably...|
|Method and container for substrate-free cultivation of a germination product|| 20080302006 || 20081211 |
| A method for substrate-free cultivation of a germination product, comprising the steps of accommodating a bean or seed in a chamber, for example in a container; setting the conditions in the chamber, such as humidity and temperature, in such a way that the bean is made to sprout; providing the chamber with a restraining means, wherein the restraining means interact with the shell of the bean or the seed in such a way that the shell is kept in the chamber while a shoot of the bean or the seed or emerges from the chamber.
|Environmental parquet and strip/plank system for flooring, walls and ceilings|| 20080302042 || 20081211 |
| Parquet and strip/plank is unfinished 7/16″ thick solid straight edge construction assembled with a pressure-sensitive adhesive covered transparent non-shrinkable or non-expandable plastic tape on the top. It takes at least 6.6 times less amount of timber to produces this product versus traditional ¾″ thick tongue-and-grooved solid flooring. Strait edged (no tongue-and-grooved) construction is installed with rigid adhesive. The spaces between the floor and walls are filled with adhesive as well. Jobsite finish provides a product with a barrier against water, germs, bacteria and other micro organisms' penetration, creating a healthy indoor air quality conditions. Installed parquet or strip/plank flooring system is non-destructible and eliminates landfill waste. Installation over radiant heated floor provides a significant saving in energy consumption. Proposed distribution system: developer/customer-parquet or strip/plank flooring manufacturer—and...|
|Apparatus and method for removing arsenic and inorganic compositions from water|| 20080302735 || 20081211 |
| Simultaneous application of ozone and ultraviolet light (UV185 and UV254) in water to be purified will create hydroxyl radicals, which combination will cause conversion of AS (III) that may be present to As (V), oxidation of inorganic matter such as manganese, sulfur, phosphorus and organic matter and provide virucidal and germicidal effects to purify the water.
|Apparatus and method for purifying water in a storage tank|| 20080302737 || 20081211 |
| A pressurized water tank having a head space includes a pump for recirculating the water through a nozzle disposed in the head space. The outflowing stream of water will entrain air and cause mixing of air entrained water with the remaining water in the tank. To enhance air entrainment and convey the air entrained water to a location well below the water level, the stream of water is injected into a vertical venturi tube. The entrained air will have an oxidizing effect upon organic matter and also cause circulation of the water within the tank. To enhance oxidation of organic and inorganic matter, a UV lamp may be located in the head space to convert oxygen molecules in the air into ozone molecules. Such ozone molecules...|
|Semiconductor devices and methods of manufacture thereof|| 20080303096 || 20081211 |
| Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes forming a transistor, the transistor including a fin having a first side and a second side opposite the first side. The transistor includes a first gate electrode disposed on the first side of the fin and a second gate electrode disposed on the second side of the fin. The method includes forming a silicide or germanide of a metal on the first gate electrode and the second gate electrode of the transistor. The amount of the metal of the silicide or germanide is substantially homogeneous over the first gate electrode and the second gate electrode proximate the fin.
|Shopping cart handle protector|| 20080303230 || 20081211 |
| A wrap or cover is shown for a handle to protect against germs or bacteria on the handle. The wrap or cover includes a pair of layers of a soft washable material having a length greater than the width and joined at their periphery by a stitching of the respective materials that comprise the layers so as to form a unitary wrap layer. A set of fasteners is attached respectively to opposite sides of the wrap layer. Each fastener includes a strip of fastener material having a length greater than its width. Each fastener comprises a Velcro material that includes a Velcro loop and a Velcro hook material.
|Virucidal/germicidal mask|| 20070295334 || 20071227 |
| The present invention provides a mask, suitable for wearing, that inhibits the passage of viruses and germs there through. Briefly, the mask comprises a number of individual layers. Each of these layers is treated with a compound designed to destroy viruses and germs, thus retarding the passage of viruses and germs to the next layer, and ultimately to the user. In one embodiment, a layer of acidic material and a separate layer of basic material are utilized in a form suitable to be placed over the user's nose and mouth.
|Germanium phototransistor with floating body|| 20070295953 || 20071227 |
| A floating body germanium (Ge) phototransistor and associated fabrication process are presented. The method includes: providing a silicon (Si) substrate; selectively forming an insulator layer overlying the Si substrate; forming an epitaxial Ge layer overlying the insulator layer using a liquid phase epitaxy (LPE) process; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers overlying the channel region; and, forming source/drain regions in the Ge layer. The LPE process involves encapsulating the Ge with materials having a melting temperature greater than a first temperature, and melting the Ge using a temperature lower than the first temperature. The LPE process includes: forming a dielectric layer overlying deposited Ge; melting the Ge; and, in response to cooling the Ge, laterally...|
|Strained semiconductor device and method of making same|| 20070295989 || 20071227 |
| A semiconductor body is formed from a first semiconductor material, e.g., silicon. A compound semiconductor region, e.g., silicon germanium, is embedded in the semiconductor body. The compound semiconductor region includes the first semiconductor material and a second semiconductor material. The compound semiconductor region has a concentration of the second semiconductor material that varies along an interface between the side portion of the compound semiconductor region and the side portion of the semiconductor body
|Semiconductor device|| 20070296043 || 20071227 |
| A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide and actinide series and of one selected from boride, silicide and germanide compounds of the one metal element, and a pMISFET formed on the substrate, the pMISFET including a second dielectric formed on the substrate and a second metal gate electrode formed on the second dielectric and made of the same material as that of the first metal gate electrode, at least a portion of the second dielectric facing the second metal gate electrode being made...|
|Hydride compounds with silicon and germanium core atoms and method of synthesizing same|| 20070297967 || 20071227 |
| A method is provided for synthesizing silicon-germanium hydride compounds of the formula (H3Ge)4-XSiHX, wherein x=0, 1, 2 or 3. The method includes combining a silane triflate with a compound having a GeH3 ligand under conditions whereby the silicon-germanium hydride is formed. The compound having the GeH3 ligand is selected from the group consisting of KGeH3, NaGeH3 and MR3GeH3, wherein M is a Group IV element and R is an organic ligand. The silane triflate can be HXSi O(OSO2CF3)4-x or HxSi(OSO2C4F9)4-x. The method can be used to synthesize trisilane, (H3Si)2SiH2, and the iso-tetrasilane analog, (H3Si)3SiH, by combining a silane triflate with a compound comprising a SiH3 ligand under conditions whereby the silicon hydride is formed. The silane triflate can include HXSi(OSO2CF3)4-x or HXSi(OSO2C4F9)4-x wherein x=1 or 2....|
|Method for identification and verification of products containing titanium dioxide pigment particles|| 20070298059 || 20071227 |
| A method for marking titanium dioxide pigment particles, as well as a method for identifying and verifying products via the marked titanium dioxide pigment particles contained in these products. The marker substance(s) is/are added during titanium dioxide production, preferably during surface treatment, drying or steam-milling. Particularly suitable as marker substances are the lanthanides, yttrium, zinc, molybdenum, tungsten, germanium, tin and scandium. The method is used to verify authentic product, to identify product forgeries (product piracy), to track distribution channels, or to identify the pigment used in order to counter unjustified complaints. It can be used in the product segments: fibres for textiles, papers for documents, pharmaceuticals, and also for plastics and coatings.
|Single-crystal metal nanocrystals|| 20070298536 || 20071227 |
| Methods for producing nanocrystals comprising metallic materials utilizing an inverse micelle solvothermal process are disclosed. Nanocrystals comprising well-ordered, single-crystalline germanium (Ge) materials with predeterminable morphologies in relatively high purity are produced by suspending a Ge salt material comprising a metal ion in a non-aqueous inverse micelle solvent comprising at least one surfactant, and introducing a reducing agent to the non-aqueous inverse micelle solvent to reduce a plurality of metal ions to form a ordered single-crystalline Ge nanocrystal.
|Semiconductor device|| 20070298560 || 20071227 |
| A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide and actinide series and of one selected from boride, silicide and germanide compounds of the one metal element, and a pMISFET formed on the substrate, the pMISFET including a second dielectric formed on the substrate and a second metal gate electrode formed on the second dielectric and made of the same material as that of the first metal gate electrode, at least a portion of the second dielectric facing the second metal gate electrode being made...|
|Integrated sige nmos and pmos transistors|| 20070298561 || 20071227 |
| A method of fabricating an integrated BiCMOS circuit is provided, the circuit including bipolar transistors 10 and CMOS transistors 12 on a substrate. The method comprises the step of forming an epitaxial layer 28 to form a channel region of a MOS transistor and a base region of a bipolar transistor. Growing of the epitaxial layer includes growing a first sublayer of silicon 28a, a first sublayer of silicon-germanium 28b onto the first sublayer of silicon, a second sublayer of silicon 28c onto the first sublayer of silicon-germanium, and a second sublayer of silicon-germanium 28d onto the second sublayer of silicon. Furthermore, an integrated BiCMOS circuit is provided, which includes an epitaxial layer 28 as described above.
|Apparatus and processes for preventing or delaying one or more symptoms of presbyopia|| 20070299430 || 20071227 |
| The present invention generally relates to an apparatus and processes for preventing or delaying presbyopia. More particularly, the present invention relates to processes and apparatus for ablating epithelial cells in the germinative zone or the pregerminative zone of the crystalline lens of the eye so that onset or progression of presbyopia or one or more symptoms is delayed or prevented.
|Method and apparatus for no-touch door opener|| 20070289101 || 20071220 |
| This invention is a method and apparatus by which potentially germ and virus infected doors can be safely and affectively opened without the user physically touching the potentially contaminated surface. The invention affectively hooks or grasps the preexisting door handle and allows the user to pull the door open. This invention also can be used to push doors open without physically touching potentially germ infected surfaces as well.
|Process for fabricating a strained channel mosfet device|| 20070290277 || 20071220 |
| A process for fabricating a MOSFET device featuring a channel region comprised with a silicon-germanium component is provided. The process features employ an angled ion implantation procedure to place germanium ions in a region of a semiconductor substrate underlying a conductive gate structure. The presence of raised silicon shapes used as a diffusion source for a subsequent heavily-doped source/drain region, the presence of a conductive gate structure, and the removal of dummy insulator previously located on the conductive gate structure allow the angled implantation procedure to place germanium ions in a portion of the semiconductor substrate to be used for the MOSFET channel region. An anneal procedure results in the formation of the desired silicon-germanium component in the portion of semiconductor substrate to be used for...|
|Floating body germanium phototransistor having a photo absorption threshold bias region|| 20070290288 || 20071220 |
| A floating body germanium (Ge) phototransistor with a photo absorption threshold bias region, and an associated fabrication process are presented. The method includes: providing a p-doped Silicon (Si) substrate; selectively forming an insulator layer overlying a first surface of the Si substrate; forming an epitaxial Ge layer overlying the insulator layer; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers; forming source/drain (S/D) regions in the Ge layer; and, forming a photo absorption threshold bias region in the Ge layer, adjacent the channel region. In one aspect, the second S/D region has a length, longer than the first S/D length. The photo absorption threshold bias region underlies the second S/D region. Alternately, the second S/D region is separated...|
|Method for producing organically-bound vitamin b|| 20070292541 || 20071220 |
| The present invention relates to a method for producing organically-bound vitamin B, preferably vitamin B1, B2, B3, B5, B6, B7, B9, B12, or mixtures thereof, in plants, wherein plant seeds are soaked in the solution of the respective vitamin and are cultured to vitamin-B-enriched germ buds by subsequent sprinkling.
|Production of stabilized whole grain wheat flour and products thereof|| 20070292583 || 20071220 |
| A stabilized bran component and a stabilized whole grain wheat flour containing the component are produced by subjecting a bran-enriched coarse fraction which contains bran, germ and starch to grinding or milling to reduce grittiness of the coarse fraction without substantially damaging the starch due to abrasion. The coarse fraction may be stabilized by heating to substantially reduce the lipase and lipoxygenase activity of the coarse fraction without substantial gelatinization of the starch. High levels of natural antioxidants and vitamins are retained while avoiding substantial acrylamide formation during the stabilization. The stabilized coarse fraction or stabilized bran component may be combined with a fine fraction which contains predominantly endosperm to obtain a stabilized whole grain wheat flour. The stabilized whole grain wheat flours and the stabilized...|
|Methods for sorting undifferentiated cells and uses thereof|| 20070292836 || 20071220 |
| A method of sorting undifferentiated cells is provided. Subpopulations of cells contained in a single line of ES cells can be sorted using cell-surface markers. The sorted undifferentiated cells have ability to produce chimera with high contribution and germ line transmission efficiently. These undifferentiated cells can be used as a valuable vehicle for the production of transgenic animals and also knockout animals.
|Nose air-filter|| 20070283963 || 20071213 |
| Nose Air-Filter consists of a clip for the interior of the nose and two filters connected thereto. The clip is simply attached to a user's septum and the two circular filters are situated just inside a user's nostrils. The user can then breathe normally through the filters without fear of inhaling harmful germs, bacteria, second hand smoke or other deleterious particles.
|Strained si formed by anneal|| 20070284579 || 20071213 |
| A semiconductor structure includes a silicon substrate layer, a relaxed silicon-germanium layer on the silicon substrate layer and a strained single crystal silicon layer on the silicon-germanium layer. The silicon-germanium layer may include a thickness of 500 angstroms or less. The method for forming the semiconductor structure includes epitaxially forming the silicon-germanium layer and the single crystal silicon layer. The silicon-germanium layer is stressed upon formation. After the single crystal silicon layer is formed over the silicon-germanium layer, an RTA or laser heat treatment process selectively melts the silicon-germanium layer but not the single crystal silicon layer. The substantially molten silicon-germanium relaxes the compressive stresses in the silicon-germanium layer and yields a relaxed silicon-germanium layer and a strained single crystal silicon layer upon cooling.
|Method for producing si1-ygey based zones with different contents in ge on a same substrate by condensation of germanium|| 20070284625 || 20071213 |
| b) oxidation of the semi-conducting zones of the said plurality of semi-conducting zones through said mask.
|Germicide composition|| 20070286907 || 20071213 |
| A method and composition for removing biofilm, disinfecting and inactivating endotoxin which generates a safe level of molecular iodine that is free of persulfate ions. The composition can be used in households, industry, on medical equipment and skin surfaces.
|Method and structure of strain control of sige based photodetectors and modulators|| 20070286952 || 20071213 |
| A SiGe or Ge structure comprises a substrate and a SiGe or Ge layer that is formed on a first surface of the substrate. A silicidation or germanide layer is formed on a second surface of the substrate so to increase the tensile strain of the SiGe or Ge layer on the first surface.
|Methods of forming variable resistance memory cells, and methods of etching germanium, antimony, and tellurium-comprising materials|| 20070287252 || 20071213 |
| A method of etching a material that includes comprising germanium, antimony, and tellurium encompasses exposing said material to a plasma-enhanced etching chemistry comprising Cl2 and CH2F2. A method of forming a variable resistance memory cell includes forming a conductive inner electrode material over a substrate. A variable resistance chalcogenide material comprising germanium, antimony, and tellurium is formed over the conductive inner electrode material. A conductive outer electrode material is formed over the chalcogenide material. The germanium, antimony, and tellurium-comprising material is plasma etched using a chemistry comprising Cl2 and CH2F2.
|Method for producing si1-ygey based zones with different contents in ge on a same substrate by condensation of germanium|| 20070287257 || 20071213 |
| b) oxidation of the Si1-yGey based semi-conductor layer.
|Vapor-phase growth method, semicondutor manufacturing method and semiconductor device manufacturing method|| 20070287268 || 20071213 |
| In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third...|
|Selective epitaxial formation of semiconductor films|| 20070287272 || 20071213 |
| Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material over insulating regions, such as field oxide, and the selective etch phases preferentially remove non-epitaxial material while deposited epitaxial material builds up cycle-by-cycle. Quality of the epitaxial material improves relative to selective processes where no deposition occurs on insulators. Use of a germanium catalyst during the etch phases of the process aid etch rates and facilitate economical maintenance of isothermal and/or isobaric conditions throughout the cycles. Throughput and quality are improved by use of trisilane, formation of amorphous material over the insulating regions and minimizing the thickness ratio of amorphous:epitaxial material in each deposition phase.
|Method for forming a semiconductor structure having a strained silicon layer|| 20070277728 || 20071206 |
| A wafer having a silicon layer that is strained is used to form transistors. The silicon layer is formed by first forming a silicon germanium (SiGe) layer of at least 30 percent germanium that has relaxed strain on a donor wafer. A thin silicon layer is epitaxially grown to have tensile strain on the relaxed SiGe layer. The amount tensile strain is related to the germanium concentration. A high temperature oxide (HTO) layer is formed on the thin silicon layer by reacting dichlorosilane and nitrous oxide at a temperature of preferably between 800 and 850 degrees Celsius. A handle wafer is provided with a supporting substrate and an oxide layer that is then bonded to the HTO layer. The HTO layer, being high density, is able...|
|Animal litter, process for preparing animal litter, and method of removal of animal waste|| 20070277739 || 20071206 |
| Disclosed is an animal litter that includes a palm oil residue, possibly in combination with another absorbent material such as whole ground grain, virgin germ, seed meal, spent germ or clay. The palm oil residue may be palm kernel cake, palm oil sludge, or palm pressed fiber. Also disclosed are a method for removing animal waste and a process for preparing an animal litter. The method for removal of animal waste includes allowing an animal to excrete waste into a container that includes a litter, the litter comprising a palm oil residue. The process for preparing an animal litter comprises combining the materials that make up the litter to form the litter.
|Single-crystal layer on a dielectric layer|| 20070278494 || 20071206 |
| The process relates to the production of a layer of a single-crystal first material on a second material. The second material has at least one aperture exposing a surface portion of a single-crystal third material. The process generally includes forming an at least partially crystalline first layer of said first material on said surface portion of the third material. Then, an amorphous or partially crystalline second layer of the first material is formed on the at least partially crystalline first layer of the first material and on one part of the second material that is around said aperture. Finally, the process includes recrystallization annealing of the first material. Thus, it is possible to produce, within one and the same wafer, either transistors on a germanium-on-insulator substrate...|
|Adult bone marrow cell transplantation to testes creation of transdifferentiated testes germ cells, leydig cells and sertoli cells|| 20070280907 || 20071206 |
| This invention pertains to the discovery that stem cells (e.g., bone marrow stem cells) transplanted directly into a testicular environment are transdifferentiated into bona fide Sertoli cells, and/or Leydig cells, and/or and germ cells. This provides a mechanism for the treatment of male infertility and/or testosterone deficiency. Thus, in one embodiment, this invention provides a method of treating infertility or testosterone deficiency in a male mammal. The method typically involves implanting stem cells into the testes of the mammal whereby the stem cells differentiate into germ cells and/or Sertoli cells and/or Leydig cells thereby reducing infertility and/or testosterone deficiency.
|High fiber, reduced effective carbohydrate corn-based food formulations|| 20070281064 || 20071206 |
| High fiber, reduced effective carbohydrate formulations useful for preparing food products such as tortillas, tortilla chips, taco shells, corn based snacks, breakfast cereal, and the like comprising about 10-80% masa corn flour; about 10-60% ground corn bran; about 1-20% pre-gelatinized flour and/or pre-gelatinized starch; about 0-60% ground corn germ; about 0-50% corn gluten meal; and about 0-30% vital wheat gluten or wheat protein isolate.
|Laptop cover with handles|| 20060289260 || 20061228 |
| The concept of this idea is wholly owned by Chandra Germaine Elliott. I thought of the idea when I noticed how others and myself were attending meetings and having to carry our laptops in our hands along with other items. Currently there are rough drawings that exist. I believe the product to be a completely new product idea and will come in multiple colors. The needs the product fulfills for the consumer is the elimination of unwanted tension on the back from carrying heavier briefcases. It also serves as a protector from minor scratches.
|Publicly-accessible moist hand cleaning wipe station|| 20060289558 || 20061228 |
| An integrated, self-contained hand sanitizer station is provided by this invention. The enclosure of the station may be located in a public venue, and conveniently dispenses wet wipe towelettes for people to clean their hands with a trash receptacle contained within the station for ready disposal of the towelettes by the patrons after their use. By making a good hand hygiene available to customers, a merchant or public authority can help to reduce germs, viruses, and bacteria that can otherwise cause the spread of infectious illnesses.
|Infrared radiation detector|| 20060289764 || 20061228 |
| Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structural layer has a stress in a predetermined range, where the predetermined range for the stress is selected prior to deposition of the structural layer. Also, the structural layer is deposited on the substrate subsequent to formation of the transistor such that deposition of the structural layer does not substantially adversely affect the operation of the transistor.
|Germanium/silicon avalanche photodetector with separate absorption and multiplication regions|| 20060289957 || 20061228 |
| A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
|Yield improvement in silicon-germanium epitaxial growth|| 20060289959 || 20061228 |
| A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting...|
|Method of depositing germanium films|| 20060292301 || 20061228 |
| A chemical vapor deposition method provides a smooth continuous germanium film layer, which is deposited on a metallic substrate at a sufficiently lower temperature to provide a germanium device suitable for use with temperature sensitive materials such as aluminum and copper. Another chemical vapor deposition method provides a smooth continuous silicon germanium film layer, which is deposited on a silicon dioxide substrate at a sufficiently low temperature to provide a germanium device suitable for use with temperature sensitive materials such as aluminum, copper and chalcogenides memory materials.
|Replacement gate field effect transistor with germanium or sige channel and manufacturing method for same using gas-cluster ion irradiation|| 20060292762 || 20061228 |
| A self-aligned MISFET transistor (500H) on a silicon substrate (502), but having a graded SiGe channel or a Ge channel. The channel (526) is formed using gas-cluster ion beam (524) irradiation and provides higher channel mobility than conventional silicon channel MISFETs. A manufacturing method for such a transistor is based on a replacement gate process flow augmented with a gas-cluster ion beam processing step or steps to form the SiGe or Ge channel. The channel may also be doped by gas-cluster ion beam processing either as an auxiliary step or simultaneously with formation of the increased mobility channel.
|Dense pitch bulk finfet process by selective epi and etch|| 20060292772 || 20061228 |
| Disclosed is a method of forming a pair of transistors by epitaxially growing a pair of silicon fins on a silicon germanium fin on a bulk wafer. In one embodiment a gate conductor between the fins is isolated from a conductor layer on the bulk wafer so a front gate may be formed. In another embodiment a gate conductor between the fins contacts a conductor layer on the bulk wafer so a back gate may be formed. In yet another embodiment both of the previous structures are simultaneously formed on the same bulk wafer. The method allow the pairs of transistors to be formed with a variety of features (e.g., strained fins, a space between two fins that is approximately 0.5 to 3 times greater than...|
|Strained field effect transistors|| 20060292776 || 20061228 |
| An NMOS transistor may be formed with a biaxially strained silicon upper layer having a thickness of greater than 500 Angstroms. The resulting NMOS transistor may have good performance and may exhibit reduced self-heating. A PMOS transistor may be formed with both a biaxially and uniaxially strained silicon germanium layer. A source substrate bias applied to both NMOS and PMOS transistors can enhance their performance.
|Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound|| 20060292790 || 20061228 |
| A dielectric layer (50) is formed over a semiconductor (10) that contains a first region (20) and a second region (30). A polysilicon layer is formed over the dielectric layer (50) and over the first region (20) and the second region (30). The polysilicon layer can comprise 0 to 50 atomic percent of germanium. A metal layer is formed over the polysilicon layer and one of the regions and reacted with the underlying polysilicon layer to form a metal silicide or a metal germano silicide. The polysilicon and metal silicide or germano silicide regions are etched to form transistor gate regions (60) and (90) respectively. If desired a cladding layer (100) can be formed above the metal gate structures.
|Atomic layer deposition of thin films on germanium|| 20060292872 || 20061228 |
| Germanium has higher mobility than silicon and therefore is considered to be a good alternative semiconductor for CMOS technology. Surface treatments a can facilitate atomic layer deposition (ALD) of thin films, such as high-k dielectric layers, on germanium substrates. Surface treatment can comprise the formation of a thin layer of GeOx or GeOxNy. After surface treatment and prior to deposition of the desired thin film, a passivation layer may be deposited on the substrate. The passivation layer may be, for example, a metal oxide layer deposited by ALD.
|Methods of fabricating p-type transistors including germanium channel regions and related devices|| 20060292880 || 20061228 |
| A method of fabricating a transistor device includes forming a non-crystalline germanium layer on a seed layer. The non-crystalline germanium layer is selectively locally heated to about a melting point thereof to form a single-crystalline germanium layer on the seed layer. The non-crystalline germanium layer may be selectively locally heated, for example, by applying a laser to a portion of the non-crystalline germanium layer. Related devices are also discussed.
|Polyester resins with a special co-catalyst for high melt poly and ssp reactivity with enhanced color values|| 20060293493 || 20061228 |
| The present invention relates to a PET resin and a process for producing polyethylene terephthalate (PET) resin having conventional catalysts such as antimony, titanium, tin or germanium compounds and a glycol insoluble tungsten compound or tungsten trioxide or tungsten carbide as co-catalyst. The tungsten compound as a co catalyst increases the rates of solid state polymerization and improves the ‘L’ color value.
|Soil processing method|| 20060283364 || 20061221 |
| In a soil processing method of the present invention, a microwave radiator is made to move into soil, and microwaves are thereafter radiated from the microwave radiator to soil to be processed. As a method for making the microwave radiator move into soil, a method in which an underground mover incorporating the microwave radiator is made to move underground while making a cultivator move underground by means of a underground-moving claw mechanism similar to a chisel or subsoiler, a method in which the microwave radiator is vertically thrust into and drawn out from soil by a power arm, or a method in which the microwave radiator is vertically thrust into and drawn out from soil by using one of various vertical excavation devices may be used....|
|Semiconductor device and method of manufacturing the same|| 20060283380 || 20061221 |
| A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer is formed on a single crystalline silicon substrate; a second silicon germanium layer is formed on the first silicon germanium layer, the second silicon germanium layer having a concentration of germanium in a range of about 1 percent by weight to about 15 percent by weight based on the total weight of the second silicon germanium layer; a strained silicon layer is formed on the second silicon germanium layer; an isolation layer is formed at a first portion of the strained silicon layer; a gate structure is formed on the strained silicon layer; and, source/drain regions...|
|Mobile germicidal system|| 20060284109 || 20061221 |
| There is disclosed a mobile germicidal system and a process of decontaminating a wall and a ceiling of a room of undesirable substances. The system comprises a frame, a displacement device and an germicidal lamp. The displacement device is selected from the group comprising a wheel, a castor, a ball, a disk, a drum, a roller, and a traction belt. The displacement device is affixed to the frame. The germicidal lamp is affixed to the frame at a non-vertical incline. The process comprises providing a mobile germicidal system comprising an germicidal lamp having an enclosure having an exposed portion, at least a portion of the exposed portion disposed non-vertically and emitting ultraviolet radiation from the germicidal lamp at a wavelength substantially at 253.7 nm through all...|
|Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminiscence device|| 20060284143 || 20061221 |
| A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten...|
|Strained germanium field effect transistor and method of making the same|| 20060284164 || 20061221 |
| A strained germanium field effect transistor (FET) and method of making the same, comprise forming a germanium layer on a substrate, then forming a Si protective layer on the germanium layer, next forming a gate insulation layer on the Si protective layer, and fmally positioning a gate on the gate insulation layer. The germanium layer is used as a carrier transport channel of the strained germanium FET to improve the drive current and the carrier mobility, and to increase the devices performance effectively. And because the Si protective layer is on the germanium layer, the interface property between the germanium layer and the gate insulation layer is improved.
|Common-aperture multispectral objective|| 20060285201 || 20061221 |
| The disclosure describes a common-aperture, multispectral device that uses folded beamsplitters in the sensor to provide the capability to simultaneously image the near infrared (NIR) and long wave infrared (LWIR) spectral bands. The folded-path optical design makes the sensor extremely compact and lightweight without compromising the F/# or field of view. The design is split into two channels a NIR channel and a LWIR channel. A Zinc Sulfide (ZnS) environmental window provides the input to the device. The input first is split into the two channels via a Germanium (Ge) beam-splitter. For the NIR Channel, the input is focused directly onto a faceplate through a series of optics. For the LWIR Channel, the input is focused onto to Ge window via a folded design including a...|
|Veterinary composition and method of using same|| 20060286185 || 20061221 |
| This invention relates to a topical veterinary composition and method of using for the treatment of minor flesh wounds or lacerations in animal and to promote the healing thereof The composition comprises of the active ingredients of tall oil, wheat germ oil and myristic acid either per se or as a topical veterinary ointment comprising the active ingredient in admixture with a suitable carrier and/or antiseptic.
|Establishment of a human embryonic stem cell line using mammalian cells|| 20060286544 || 20061221 |
| Purified preparations of human embryonic stem cells with certain population-specific characteristics are disclosed. This preparation is characterized by the positive expression of the following pluripotent cell surface markers: SSEA-1 (−); SSEA-4 (+); TRA-1-60 (+); TRA-1-81 (+); alkaline phosphatase (+), as well as a set of ES cell markers including Oct-4, Nanog, Rex1, Sox2, Thy1, FGF4, ABCG2, Dppa5, UTF1, Criptol, hTERT, Connexin-43 and Connexin-45. The cells of the preparation are negative for lineage specific markers like Keratin 8, Sox-1, NFH (ectoderm), MyoD, brachyury, cardiac-actin (mesoderm), HNF-3 beta, albumin, and PDX1 (endoderm). The cells of the preparation are human embryonic stem cells, have normal karyotypes, exhibit high telomerase activity and continue to proliferate in an undifferentiated state after continuous culture for over 40 passages. The embryonic stem cell...|
|Methods for diagnosing epigenetic, transgenerational effects of environmental toxicants on mammalian germ-lines and treating associated diseases|| 20060286585 || 20061221 |
| The present invention provides methods for detecting epigenetic, multigenerational DNA alterations caused by toxicants such as endocrine disruptor agents in a subject. The practice of the present invention can be used to diagnose and/or treat a subject having the identified DNA alterations by developing therapeutics, to prevent or delay the onset of associated diseases and/or dysfunctions.
|Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate|| 20060286729 || 20061221 |
| A complementary metal oxide semiconductor integrated circuit may be formed with a PMOS device formed using a replacement metal gate and a raised source drain. The raised source drain may be formed of epitaxially deposited silicon germanium material that is doped p-type. The replacement metal gate process results in a metal gate electrode and may involve the-removal of a nitride etch stop layer.
|Gate electrode dopant activation method for semiconductor manufacturing|| 20060286763 || 20061221 |
| Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from...|
|Expression of active human factor ix in mammary tissue of transgenic animals|| 20060287228 || 20061221 |
| Recombinant Factor IX characterized by a high percentage of active protein can be obtained in the milk of transgenic animals that incorporate chimeric DNA molecules according to the present invention. Transgenic animals of the present invention are produced by introducing into developing embryos DNA that encodes Factor IX, such that the foreign DNA is stably incorporated in the DNA of germ line cells of the mature animal. Particularly efficient expression was accomplished using a chimeric construct comprising a mammary gland specific promoter, Factor IX cDNA that lacked the complete or any portion of the 5′-untranslated and 3′-untranslated region, which is substituted with a 5-′ and 3′-end of the mouse whey acidic protein gene. In vitro cell cultures of cells explanted from the transgenic mammal of the...|
|Plant n-acylethanolamine binding proteins|| 20060288450 || 20061221 |
| The invention provides plant binding proteins of N-acylethanolamines. Also provided are constructs comprising coding sequences for the binding proteins, plants transformed therewith and methods of use thereof. The invention allows the modification of plant signaling by N-acylethanolamines. Such modification may be used to produce plants that are improved with respect to growth, seed germination, pathogen response and stress tolerance.
|Combi-supersonic-adjusting-nozzle|| 20060277914 || 20061214 |
| The filed application is a supplement to my U.S. application Ser. No. 10/757,596 and to my German application No.: 103 02 041.1-13, which represent a basic conception for a novel internal combustion engine with the name: Injector-Centrifuge-Turbine-Engine (ICT-Engine) for road vehicles, and injector-Centrifuge-Jet-Engine (ICJ-Engine) for aircraft. New is the introduction of a supersonic injector in place of the turbine and the rotary compressor, and the introduction of a gas-centrifuge for decomposing of the mixed gases. In particular for aircraft, our presently used turbine-engines suffer from fatal turbine-blades crackings, which often results in aircraft crashes, with hundreds of burnt people. This can be eliminated by the novel engine. But also the automobilists would have a profit, by ca. 30% reduction in fuel consumption, arising from removal of...|
|Protective temple covering|| 20060279691 || 20061214 |
| Disclosed are systems and methods for manufacturing sleeves, a sleeve dispenser, and a method of manufacturing inexpensive, throwaway sleeves that may be used to protect temples from chemicals, germs, bacteria, and the like. Sleeves may be inexpensively manufactured using a single inexpensive raw material as well as an inexpensive manufacturing process in which no waste material is produced. Furthermore, sleeves may be produced as a compact roll of sleeves to accommodate unobtrusive placement in areas with limited space, thereby facilitating distribution in space-limited facilities such as hair salons, spas, optometrist or ophthalmologist offices, sunglass shops, and the like. In some embodiments, the sleeves include latitudinal and longitudinal perforations that facilitate removal of pairs of sleeves from the sleeve roll and removal of each of the pair...|
|Anti-infective iodine based compositions for otic and nasal use|| 20060280809 || 20061214 |
| Otic and nasal compositions containing any iodine-containing derivatives, including, free iodine and iodoform, are disclosed. lodoform is a potent germicidal agent which provides anti-infective benefits. The composition also contains one or more anti-inflammatory agents and one or more natural or synthetic compounds which provide analgesic benefits. The composition preferably also contains one or more natural or synthetic compounds which provides aromatic benefits. The composition may be utilized to treat otic and nasal conditions, including otitis media, by topically applying the composition to the affected tissue.
|Food grade antioxidant and flavorant from roasted wheat malt|| 20060280851 || 20061214 |
| A food grade antioxidant and a baked food flavorant is isolated from roasted wheat malt containing bran. The germinated wheat is roasted until the malt's naturally occurring enzymes are substantially destroyed. The roasted wheat malt is milled into fine particles that may be physically separated into a fraction that is primarily homogeneous bran particles and into a fraction that is primarily heterogeneous endosperm and germ particles. The bran fraction is useful as a food flavorant and the endosperm and germ fraction may be used directly as an antioxidant for oils and fats, or foods, pharmaceuticals and cosmetics containing oils and/or fats or the antioxidant may be chemically extracted. The milled homogeneous bran and heterogeneous endosperm and germ particles may be recombined in customized proportions and thus...|