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Germ-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Compact 3d receiver architecture using silicon germanium thru silicon via technology
Gm Global Technology Operations Llc
June 14, 2018 - N°20180167095

A wide bandwidth radio system designed to adapt to various global radio standards and, more particularly, to a system and method incorporate a compact receiver array design to support the demand for increased mobile broadband services using a through-silicon vias to interconnect front-end analog functions in sige bicmos to backend circuitry in cmos.. .
Method of forming conformal epitaxial semiconductor cladding material over a fin field effect transistor (finfet) ...
Applied Materials, Inc.
June 14, 2018 - N°20180166570

The present disclosure generally relates to devices having conformal semiconductor cladding materials, and methods of forming the same. The cladding material is a silicon germanium epitaxial material.
Lateral bipolar junction transistor with controlled junction
International Business Machines Corporation
June 14, 2018 - N°20180166563

A method of forming a lateral bipolar junction transistor (lbjt) that includes providing a germanium containing layer on a crystalline oxide layer, and patterning the germanium containing layer stopping on the crystalline oxide layer to form a base region. The method may further include forming emitter and collector extension regions on opposing sides of the base region using ion implantation, ...
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Methods for detecting mutation load from a tumor sample
Life Technologies Corporation
June 14, 2018 - N°20180165410

A targeted panel with low sample input requirements from a tumor only sample may be processed to estimate mutation load in a tumor sample. The method, including detecting variants in nucleic acid sequence reads corresponding to targeted locations in the tumor sample genome; annotating detected variants with an annotation information from a population database; filtering the detected variants, wherein the ...
Systems and methods for converting, delaying, and measuring electromagnetic energy or wave(s) input within ...
The United States Of America As Represented By The Secretary Of The Navy
June 14, 2018 - N°20180164153

An electromagnetic (em) energy conversion and measurement system and related methods are provided for converting a first em energy (e.g., infrared) to a second em energy (e.g., visible light) having at least a different wavelength or frequency than the first em energy then using a detector to detect or measure the second em energy. An array of conversion ...
Etching composition and method for fabricating semiconductor device by using the same
Soulbrain Co., Ltd.
June 14, 2018 - N°20180163130

An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (sige)..
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Low power barrier modulated cell for storage class memory
Sandisk Technologies Llc
June 07, 2018 - N°20180159033

Systems and methods for providing a barrier modulated cell (bmc) structure that may comprise a reversible resistance-switching memory element within a memory array are described. The bmc structure may include a barrier layer comprising a layer of amorphous germanium or amorphous silicon germanium paired with a conductive metal oxide, such as titanium dioxide (tio2), strontium titanate (srtio3), or a binary ...
Self-aligned silicon germanium finfet with relaxed channel region
Stmicroelectronics, Inc.
June 07, 2018 - N°20180158945

A self-aligned sige finfet device features a relaxed channel region having a high germanium concentration. Instead of first introducing germanium into the channel and then attempting to relax the resulting strained film, a relaxed channel is formed initially to accept the germanium.
Semiconductor memory devices
Samsung Electronics Co., Ltd.
June 07, 2018 - N°20180158826

A semiconductor memory device includes a substrate having an active region, word lines extending across the active region, a bit line on the active region between the word lines, a bit line node contact between the bit line and the active region, and a storage node contact on an end portion of the active region, wherein one or more of ...
Method and system for producing gallium-68 radioisotope by solid targeting in a cyclotron
Ncm Usa Bronx Llc
June 07, 2018 - N°20180158559

In a system and a method for making carrier-free radioactive isotopic gallium-68, stable enriched zinc-68 is formed into a solid target of very high purity. The solid target of enriched zinc-68 is exposed to a proton beam provided by irradiation in a cyclotron to change the enriched zinc-68 into gallium-68.
Infrared optical system, imaging optical device, and digital appliance
Konica Minolta, Inc.
June 07, 2018 - N°20180157012

This infrared optical system using the wavelength range of 3 to 5 μm comprises, in the order from an object side, a first lens having a negative power and formed with a convex meniscus toward an object, a second lens that is convex on both sides, and a cold aperture. A bandpass filter is provided between the second lens and ...
System separation device
June 07, 2018 - N°20180155903

A system separation device with at least one pressure-proof tank for containing a liquid that forms a predetermined liquid level in the tank, above which level there is a gas cushion. The device contains an inlet in the upper region of the tank for fluidly feeding the tank from a first fluid system, and an outlet in the lower region ...
Carbon-based interface for epitaxially grown source/drain transistor regions
Intel Corporation
May 31, 2018 - N°20180151733

Techniques are disclosed for forming p-mos transistors having one or more carbon-based interface layers between epitaxially grown s/d regions and the channel region. In some cases, the carbon-based interface layer(s) may comprise a single layer having a carbon content of greater than 20% carbon and a thickness of 0.5-8 nm.
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Finfet devices and methods of forming
Taiwan Semiconductor Manufacturing Company, Ltd.
May 31, 2018 - N°20180151704

A finfet device and methods of forming a finfet device are provided. The method includes forming a capping layer over a fin of a fin field effect transistor (finfet), where the fin is formed of a material comprising germanium.
N-type doping of strained epitaxial germanium films through co-implantation and nanosecond pulsed laser melting
President And Fellows Of Harvard College
May 31, 2018 - N°20180151361

In one aspect a method of fabricating an n-doped strained germanium (ge) film is disclosed, which includes depositing a strained ge film on an underlying substrate, implanting at least one electron-donating dopant in the ge film, and exposing the implanted ge film to one or more laser pulses having a pulsewidth in a range of about 1 ns to about 100 ms ...
Structured inquiry language
May 31, 2018 - N°20180150508

The present invention is a system application software for creation and execution of structured query language (sql) statements in different languages. Currently, all sql statements are only in the english language.
Electro-absorption modulator with local temperature control
Futurewei Technologies, Inc.
May 31, 2018 - N°20180149890

Methods, apparatus, and systems are provided including an electro-absorption modulator (eam) with local temperature control for optical communication. One aspect provides an optical eam including a semiconductor portion configured to modulate light for transmission or reception of an optical signal.
Silicon-germanium based optical filter
Viavi Solutions Inc.
May 31, 2018 - N°20180149781

An optical filter may include a substrate. An optical filter may include a set of optical filter layers disposed onto the substrate.
Plant germplasm resistant to rna viruses
Kansas State University Research Foundation
May 31, 2018 - N°20180148736

Disclosed is a dsrna construct used to silencing specific eukaryotic translation initiation factor in plants to produce a plant resistant to viruses such as potyviruses, luteoviruses, and furoviruses. More specifically, the plant would be resistant to viruses such as wheat streak mosaic virus, triticum mosaic virus, soil bourne mosaic virus, or barley yellow dwarf virus.
Method for producing hypoallergenic peanut products
Molecular Epidemiology Inc.
May 31, 2018 - N°20180148671

A peanut food product with reduced levels of allergenic proteins such as ala h1/h2/h3 is produced by initiating the germination process in raw peanuts, holding the peanuts in moist conditions to initiate germination, and then treating with bromelain.. .
Use of an aminoglycoside for nonsense mutation suppression and the treatment of disease
Ptc Therapeutics, Inc.
May 31, 2018 - N°20180147228

Methods of using and pharmaceutical compositions comprising (2r,3s,4r,5r,6s)-5-amino-6-(((1r,2s,3s,4r,6s)-4,6-diamino-3-(((2r,3r,4r,5r)-3,5-dihydroxy-5-methyl-4-(methylamino)tetrahydro-2h-pyran-2-yl)oxy)-2-hydroxycyclohexyl)oxy)- 2-(hydroxymethyl)tetrahydro-2h-pyran-3,4-diol are disclosed, including methods of treating or preventing a nonsense mutation mediated disease associated with ...
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