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Germ patents



      

This page is updated frequently with new Germ-related patent applications.




Date/App# patent app List of recent Germ-related patents
06/23/16
20160181598 
 Negative active material and lithium battery including negative active material patent thumbnailnew patent Negative active material and lithium battery including negative active material
A negative active material includes a silicon-based alloy, wherein the silicon-based alloy includes silicon (si); a first metal (m1) selected from titanium (ti), vanadium (v), chromium (cr), iron (fe), cobalt (co), nickel (ni), copper (cu), zinc (zn), gallium (ga), and germanium (ge), and at least one additional element (a), which is included in the silicon-based alloy and on a surface of silicon-based alloy, selected from carbon (c), boron (b), sodium (na), nitrogen (n), phosphorous (p), sulfur (s), and chlorine (cl), and the silicon-based alloy has an internal porosity of about 35% or less. A lithium battery including the negative active material may have improved lifespan characteristics..

06/23/16
20160181521 
 Variable resistance material layers and variable resistance memory devices including the same patent thumbnailnew patent Variable resistance material layers and variable resistance memory devices including the same
A variable resistance material layer including germanium (ge), antimony (sb), tellurium (te), and at least one type of impurities x. The variable resistance material layer having a composition represented by a chemical formula of xp(geasb(1-a-b)teb)(1-p), wherein an atomic concentration of the impurities x is in a range of 0<p≦0.2, an atomic concentration of ge is in a range of 0.05≦a<0.19, and an atomic concentration of te is in a range of 0.42≦b≦0.56..

06/23/16
20160181515 
 Embedded phase change memory devices and related methods patent thumbnailnew patent Embedded phase change memory devices and related methods
A method for making an integrated circuit (ic) including embedded phase change memory (pcm) may include forming an array of heating elements above a substrate including processing circuitry thereon, and forming a respective pcm chalcogenide glass layer above each heating element. This may be done by forming a tellurium-rich, germanium-antimony-tellurium (gst) layer above the heating element, and forming a germanium-rich gst layer above the tellurium-rich gst layer.

06/23/16
20160181403 
 Finfets and methods for forming the same patent thumbnailnew patent Finfets and methods for forming the same
A finfet includes a semiconductor fin including an inner region, and a germanium-doped layer on a top surface and sidewall surfaces of the inner region. The germanium-doped layer has a higher germanium concentration than the inner region.

06/23/16
20160181395 
 Finfet device having a high germanium content fin structure and  making same patent thumbnailnew patent Finfet device having a high germanium content fin structure and making same
A fin of silicon-germanium material is formed and covered with an epitaxially grown layer of silicon material. A dummy transistor gate is then formed to extend over a channel of the fin.

06/23/16
20160181105 
 Silicon-germanium (sige) fin formation patent thumbnailnew patent Silicon-germanium (sige) fin formation
Constructing an sige fin by: (i) providing an intermediate sub-assembly including a silicon-containing base layer and a silicon-containing first fin structure extending in an upwards direction from the base layer; (ii) refining the sub-assembly by covering at least a portion of the top surface of the base layer and at least a portion of the first and second lateral surfaces of the first fin structure with a pre-thermal-oxidation layer that includes silicon-germanium (sige); and (iii) further refining the sub-assembly by thermally oxidizing the pre-thermal oxidation layer to migrate ge content from the pre-thermal-oxidation layer into at least a portion of the base layer and at least a portion of first fin structure.. .

06/23/16
20160181099 
 Methods and structures to prevent sidewall defects during selective epitaxy patent thumbnailnew patent Methods and structures to prevent sidewall defects during selective epitaxy
Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type iii-v or germanium (ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls.

06/23/16
20160181096 
 Method for growing germanium epitaxial films patent thumbnailnew patent Method for growing germanium epitaxial films
A method for growing germanium epitaxial films is disclosed. Initially, a silicon substrate is preconditioned with hydrogen gas.

06/23/16
20160181095 
 Silicon-germanium fin of height above critical thickness patent thumbnailnew patent Silicon-germanium fin of height above critical thickness
Embodiments of the invention include a method for fabricating a sige fin and the resulting structure. A soi substrate is provided, including at least a silicon layer on top of a box.

06/23/16
20160181087 
 Particle removal with minimal etching of silicon-germanium patent thumbnailnew patent Particle removal with minimal etching of silicon-germanium
Particle-clean formulations and methods for semiconductor substrates use aqueous solutions of tetraethylammonium hydroxide (“teah,” c8h21no) with or without hydrogen peroxide (h2o2). The solution ph ranges from 8-12.5.

06/23/16
20160175475 
new patent

Ultraviolet light germicidal sanitizing system ulitilizing various room sanitizing modes


An ultraviolet (uv) light germicidal sanitizing system for use in an enclosed space comprises a room occupancy sensor, a door sensor, a uv light generating unit, and a control software application. The room occupancy sensor is positioned in the enclosed space and generates a first signal indicating that the enclosed space is either occupied or unoccupied.

06/23/16
20160174570 
new patent

Endophytic microbial symbionts in plant prenatal care


The present disclosure provides compositions comprising novel endophytes capable of promoting germination endophytes that have a symbiotic relationship with plants. The present disclosure further provides methods of improving seed vitality, biotic and abiotic stress resistance, plant health and yield under both stressed and unstressed environmental conditions, comprising inoculating a seed with the novel endophyte strains and cultivating a plant therefrom..

06/23/16
20160174566 
new patent

Methods, formulations, and kits for bacterial degradation


Methodologies, formulations, and kits suitable for decontaminating environments containing bacterial spores by degrading the spores. Formulations contain papain, at least one germinant, and optionally one or more additional enzymes.

06/23/16
20160174502 
new patent

Buglossoides 'fitzroy'


A new and distinct buglossoides arvensis plant named ‘fitzroy’ characterized by vigorous plant growth and abundant side shoot development. Seeds are distinctively well retained on the plant.

06/23/16
20160174456 
new patent

Method and estimating a seed germination ability


A apparatus and method for estimating a germination ability of a seed comprises a terahertz signal source for emitting a terahertz signal towards the seed, a detector for detecting at least part of the terahertz signal having interacted with the seed, a scanner for moving the support relative to the terahertz signal to provide a scan of the seed, a data processing device for forming an image data from the detected terahertz signal as obtained for a plurality of positions during the scan of the seed, and a decision support system for providing an estimate of the germination ability from the image data. In an embodiment, the terahertz signal source is arranged for emitting a continuous or pulse wave signal, and wherein the detector is arranged for detecting an amplitude and a phase of the terahertz signal having interacted with the seed.

06/16/16
20160172549 

Phosphor compositions and lighting apparatus thereof


A phosphor composition is disclosed. A phosphor composition, comprises at least 10 atomic % bromine; silicon, germanium or combination thereof; oxygen; a metal m, wherein m comprises zinc (zn), magnesium (mg), calcium (ca), strontium (sr), barium (ba), or combinations thereof; and an activator comprising europium.
General Electric Company


06/16/16
20160172525 

High-speed germanium on silicon avalanche photodiode


A high-speed germanium on silicon (ge/si) avalanche photodiode may include a substrate layer, a bottom contact layer disposed on the substrate layer, a buffer layer disposed on the bottom contact layer, an electric field control layer disposed on the buffer layer, an avalanche layer disposed on the electric field control layer, a charge layer disposed on the avalanche layer, an absorption layer disposed on the charge layer, and a top contact layer disposed on the absorption layer. The electric field contact layer may be configured to control an electric field in the avalanche layer..
Sifotonics Technologies Co., Ltd.


06/16/16
20160172472 

Techniques for forming non-planar germanium quantum well devices


Techniques are disclosed for forming a non-planar germanium quantum well structure. In particular, the quantum well structure can be implemented with group iv or iii-v semiconductor materials and includes a germanium fin structure.
Intel Corporation


06/16/16
20160172448 

Finfet with a silicon germanium alloy channel and fabrication thereof


A gate cavity is formed exposing a portion of a silicon fin by removing a sacrificial gate structure that straddles the silicon fin. An epitaxial silicon germanium alloy layer is formed within the gate cavity and on the exposed portion of the silicon fin.
International Business Machines Corporation


06/16/16
20160172361 

Methods of forming field effect transistors having silicon-germanium source/drain regions therein


Methods of forming field effect transistors include selectively etching source and drain region trenches into a semiconductor region using a gate electrode as an etching mask. An epitaxial growth process is performed to fill the source and drain region trenches.

06/16/16
20160172208 

Chemical mechanical planarization topography control via implant


Systems and methods for chemical mechanical planarization topography control via implants are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes increasing the content of at least one of silicon or germanium in at least select regions of a dielectric material thereby reducing the material removal rate for a chemical mechanical polishing (cmp) process at the select regions, and removing material from the dielectric material using the cmp process.
Micron Technology, Inc.


06/16/16
20160172192 

Cyclical deposition of germanium


In some aspects, methods for forming a germanium thin film using a cyclical deposition process are provided. In some embodiments, the germanium thin film is formed on a substrate in a reaction chamber, and the process includes one or more deposition cycles of alternately and sequentially contacting the substrate with a vapor phase germanium precursor and a nitrogen reactant.
Asm Ip Holding B.v.


06/16/16
20160168015 

Glasses for the correction of chromatic and thermal optical aberations for lenses transmitting in the near, mid, and far-infrared spectrums


The invention relates to chalcogenide glass compositions for use in a lens system to balance thermal effects and chromatic effects and thereby provide an achromatic and athermal optical element that efficiently maintains achromatic performance across a broad temperature range. The glass composition is based on sulfur compounded with germanium, arsenic and/or gallium, and may further comprise halides of, for example, silver, zinc, or alkali metals.
Schott Corporation


06/16/16
20160167124 

Fireproof ceramic impact pad


The invention relates to a fireproof (refractory) ceramic impact pad (also called impact pot, german: pralltopf), which is typically installed along the bottom of a vessel treating metallurgical melts at an area where the metal melt, poured into the vessel, normally hits the vessel bottom. Insofar the impact pot has the task to protect the refractory bottom of the metallurgical vessel (to reduce its wear) and/or to distribute the metal melt within the vessel..
Refractory Intellectual Property Gmbh & Co., Kg


06/16/16
20160166549 

Bcl6 inhibitors as anticancer agents


The invention provides compositions and methods for blocking the bcl6 btb domain with small molecule, non-peptide compounds as disclosed and claimed herein. Bcl6 is a transcriptional repressor of the btb-poz (brie a brae, tramtrack, broad complex/pox virus zincfinger) family of proteins.
University Of Maryland, Baltimore


06/16/16
20160165836 

Recirculating pet fountain with pet food holder


A recirculating pet fountain includes a pet food holder receiving pet food providing material that can be a growable pet food that provides food edible by a pet using the fountain. The holder receives water from the fountain at least wetting and preferably watering growable pet food causing germination or growth that produces pet edible food.
Pioneer Pet Products, Llc


06/09/16
20160163707 

Epitaxially grown silicon germanium channel finfet with silicon underlayer


Embodiments of the present invention provide a method for epitaxially growing a finfet. One method may include providing a semiconductor substrate including an insulator and an underlayer; forming a channel layer on the semiconductor substrate using epitaxial growth; etching a recess into the channel layer and epitaxially regrowing a portion on the channel layer; etching the channel layer and the underlayer to form fins; forming a gate structure and a set of spacers; etching a source drain region into the channel layer; and forming a source drain material in the source drain region..
Globalfoundries Inc.


06/09/16
20160163649 

Semiconductor device and fabrication the same


The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer..
Pannova Semic, Llc


06/09/16
20160163648 

Method for forming an electrical contact


A method for forming an electrical contact to a semiconductor structure is provided. The method includes providing a semiconductor structure, providing a metal on an area of said semiconductor structure, wherein said area exposes a semiconductor material and is at least a part of a contact region, converting said metal to a si-comprising or a ge-comprising alloy, thereby forming said electrical contact on said area, wherein said converting is done by performing a vapor-solid reaction, whereby said semiconductor structure including said metal is subjected to a silicon-comprising precursor gas or a germanium-comprising precursor gas..
Imec Vzw


06/09/16
20160158122 

Microbicidal personal care compositions comprising metal ions


Animate surface treatment compositions comprise (or in certain preferred embodiments may consist essentially of, or may consist of): a metal ion source material which releases copper ions and/or zinc ions into the treatment composition, in certain embodiments at least one alcohol which independently of other constituents present exhibits a microbicidal effect, in certain embodiments at least one quaternary ammonium compound which provides a microbicidal benefit, optionally but very preferably also at least one detersive surfactant, further optionally one or more further constituents which impart one or more advantageous technical or aesthetic benefits to the compositions, including one or more detersive surfactants, and water, wherein the compositions are at a ph such that the animate surface treatment compositions, exhibit a microbicidal or germicidal or antimicrobial effect on treated surfaces, which compositions are characterized in exhibiting a microbicidal benefit when tested against one or more challenge microorganisms according to one or more standardized test protocols.. .
Reckitt & Colman (overseas) Limited


06/09/16
20160157490 

Compositions comprising a germinant and an antimicrobial agent


The present invention provides an antiseptic composition comprising a germinant and an antimicrobial agent, wherein the germinant increases a pathogen's susceptibility to attack from the antimicrobial agent and wherein the antimicrobial agent does not inhibit the germinant. The present invention also provides an antiseptic wipe, handwash or paint comprising such antiseptic composition and a method of sterilizing a surface using such a composition..
Insight Health Limited


06/02/16
20160155884 

Method and system for germanium-on-silicon photodetectors without germanium layer contacts


Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers.
Luxtera, Inc.


06/02/16
20160155863 

Germanium metal-contact-free near-ir photodetector


A ge-on-si photodetector constructed without doping or contacting germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 a/w, corresponding to 99.2% quantum efficiency.
Coriant Advanced Technology, Llc


06/02/16
20160155819 

Transistor strain-inducing scheme


A transistor device includes a gate structure disposed over a channel region of a semiconductor substrate. A source/drain recess is arranged in the semiconductor substrate alongside the gate structure.
Taiwan Semiconductor Manufacturing Co., Ltd.


06/02/16
20160155799 

Increased surface area of epitaxial structures in a mixed n/p type fin semiconductor structure with multiple epitaxial heads


A non-planar semiconductor structure includes mixed n-and-p type raised semiconductor structures, e.g., fins, having epitaxial structures grown on top surfaces thereof, for example, epitaxial silicon and silicon germanium, naturally growing into a diamond shape. The surface area of the epitaxial structures is increased by removing portion(s) thereof, masking each type as the other type is grown and then subsequently modified by the removal.
Globalfoundries Inc.


06/02/16
20160155740 

Cmos devices having dual high-mobility channels


A method for forming a semiconductor structure includes providing a semiconductor substrate including a first region and a second region; and forming a first and a second metal-oxide-semiconductor (mos) device. The step of forming the first mos device includes forming a first silicon germanium layer over the first region of the semiconductor substrate; forming a silicon layer over the first silicon germanium layer; forming a first gate dielectric layer over the silicon layer; and patterning the first gate dielectric layer to form a first gate dielectric.
Taiwan Semiconductor Manufacturing Company, Ltd.


06/02/16
20160155676 

Methods for depositing films on sensitive substrates


Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties.
Novellus Systems, Inc.


06/02/16
20160155668 

Germanium finfets with metal gates and stressors


An integrated circuit structure includes an n-type fin field effect transistor (finfet) and a p-type finfet. The n-type finfet includes a first germanium fin over a substrate; a first gate dielectric on a top surface and sidewalls of the first germanium fin; and a first gate electrode on the first gate dielectric.
Taiwan Semiconductor Manufacturing Co., Ltd.


06/02/16
20160155637 

Method for producing structured coatings, structured coatings produced according to said method and use thereof


The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a substrate of at least one coating composition, the partial activation of the resulting coating on the coated substrate, and oxidation of non-activated coating on the substrate, to the coats produced by the process and to their use.. .
Evonik Industries Ag


06/02/16
20160155635 

Atomic layer deposition of geo2


Atomic layer deposition processes for forming germanium oxide thin films are provided. In some embodiments the ald processes can include the following: contacting the substrate with a vapor phase tetravalent ge precursor such that at most a molecular monolayer of the ge precursor is formed on the substrate surface; removing excess ge precursor and reaction by products, if any; contacting the substrate with a vapor phase oxygen precursor that reacts with the ge precursor on the substrate surface; removing excess oxygen precursor and any gaseous by-products, and repeating the contacting and removing steps until a germanium oxide thin film of the desired thickness has been formed..
Asm Ip Holding B.v.


06/02/16
20160153117 

Method of growing germanium crystals


In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber.
South Dakota Board Of Regents


06/02/16
20160153055 

Floury 2 gene-specific assay in maize for floury (fl2) trait introgression


The disclosure concerns compositions and methods for determining the zygosity of corn plants containing one or more floury2 (fl2) mutations. In embodiments, the disclosure concerns a gene specific pcr-based molecular (kaspar®) assay for identifying the floury2 trait in plants.
Dow Agrosciences Llc


06/02/16
20160152896 

Composition for optical film and films and display device


A composition for an optical film, including a homeotropic liquid crystal, a silane or germane compound including at least one fluorine at a terminal end thereof, and a polymerizable compound.. .
Samsung Electronics Co., Ltd.


06/02/16
20160152703 

Anti-cdh3 humanized antibody, drug conjugate thereof, and use thereof


It is an object of the present invention to produce an anti-cdh3 humanized antibody having lower immunogenicity, and to provide an anti-cdh3 humanized antibody drug conjugate comprising the aforementioned anti-cdh3 humanized antibody that more efficiently kills cancer cells expressing cdh3. The present invention provides a conjugate of an anti-cdh3 humanized antibody and a drug by conjugating a drug having cytotoxicity to an anti-cdh3 humanized antibody which comprises complementarity determining region sequences derived from the heavy chain variable region of an antibody produced by cells having accession no.
Perseus Proteomics Inc.


06/02/16
20160152649 

Metal amides of cyclic amines


Compounds, and oligomers of the compounds, are synthesized with cyclic amine ligands attached to a metal atom. These compounds are useful for the synthesis of materials containing metals.
President And Fellows Of Harvard College


06/02/16
20160151805 

Granulated seeds


The invention relates to a process for the production of granulated seed comprising seed kernels which are coated with a coating layer, the process comprising the following steps: providing seed kernels, applying a binder to the seed kernels, giving rise to seed kernels coated with a binder, and applying a coating composition comprising silica to the seed kernels coated with binder, giving rise to seed kernels coated with a coating layer. The invention furthermore relates to the use of silica as component of the coating layer of granulated seed for improving the germination ability of the seed.
Evonik Degussa Gmbh


06/02/16
20160151300 

Method of producing and introducing a far infrared device by way of adhesive tape


The present invention relates to a safe, dermatologically safe device in the form of tape containing far-infrared generating particles and a method for producing such a product. The method for producing the far-infrared tape consists of mixing fine particles of far-infrared emitting substances into an adhesive or the tape backing material prior to or following further processing such as, but not limited to forming, molding, filling, pressing, dipping or extruding the material.

06/02/16
20160151214 

Isolating structure for external skeletal fixator


The present invention relates to an external skeletal fixator, which comprises a fixing member and a stereoscopic hood. The fixing member is disposed on a first end surface of the stereoscopic hood.
Metal Industries Research & Development Centre


06/02/16
20160150839 

Glove with hand-coloring marking area


A glove having a hand-coloring marking area for encouraging user's to wash their hands is provided. The glove includes a hand receiving portion and individual finger compartments.

06/02/16
20160150749 

Rag-based selection methods for improving aphid resistance in soybeans


This invention relates to methods of improving resistance to aphids in soybean plants, as well as methods for identifying and/or selecting soybean plants or germplasm that display improved resistance to one or more biotypes of soybean aphid. In certain examples, the method comprises selecting a first and second soybean plant or germplasm, each of which has a different favorable rag1, rag2, or rag3, allele, haplotype, or marker profile, and crossing those first and second soybean plants to produce a progeny plant with improved soybean aphid resistance.
Pioneer Hi Bred International Inc


06/02/16
20160150748 

Rag-based selection methods for improving aphid resistance in soybeans


This invention relates to methods of improving resistance to aphids in soybean plants, as well as methods for identifying and/or selecting soybean plants or germplasm that display improved resistance to one or more biotypes of soybean aphid. In certain examples, the method comprises selecting a first and second soybean plant or germplasm, each of which has a different favorable rag1, rag2, or rag3, allele, haplotype, or marker profile, and crossing those first and second soybean plants to produce a progeny plant with improved soybean aphid resistance.
Pioneer Hi Bred International Inc


05/26/16
20160149110 

P-type semiconductor composed of magnesium, silicon, tin, and germanium, and manufacturing the same


A manufacturing method for a p-type semiconductor formed by sintering a compound represented by the general chemical formula: mg2sixsnygez (where x+y+z=1, x>0, and y>0, z>0). The p-type semiconductor has a composition in which x is in the range of 0.00<x≦0.25, and z satisfies the relationship: −1.00x+0.40≧z≧−2.00x+0.10, where z>0.00, and y is in the range of 0.60≦y≦0.95, and z satisfies either of the relationships: −1.00y+1.00≧z≧−1.00y+0.75, where 0.60≦y≦0.90 and z>0.00, and −2.00y+1.90≧z≧−1.00y+0.75, where 0.90≦y≦0.95 and z>0.00..
Mitsuba Corporation


05/26/16
20160146806 

Receptors for b7-h4


Isolated cell surface receptors for b7-h4 have been identified based on function. B7-h4 receptor activation by b7-h4 on the dendritic cell, t follicular helper cell and germinal center b cell membrane stimulates inhibitory signaling in those leukocytes.
Amplimmune, Inc.


05/26/16
20160144358 

Dynamic lab on a chip based point-of-care device for analysis of pluripotent stem cells, tumor cells, drug metabolites, immunological response, glucose monitoring, hospital based infectious diseases, and drone delivery point-of-care systems


The invention provides for a novel dynamically configurable point-of-care device for clinical diagnostics and research for analysis of activity associated with pluripotent stem cells, tumor cells, drug metabolites, immunological response, glucose monitoring, cardiovascular diseases, liver cell therapy, cell-cell signaling, epidemic outbreaks, hospital based infectious diseases, pathogens, germ cells, pharmacological compounds, oxidation reduction, microscopy, tomography, flow cytometry, clinical lab testing, and for providing immunoassays, elisa, electrophoresis, pcr, chromatography, and other laboratory functions. The device comprises a biochemical processing module further comprising a processor and at least one controller, receiving microfluidic elements, sensors, software scripts, an electrically operated interface, flow ports, a user interface, memory, and a communications link, configurable based on analysis of patient data.

05/26/16
20160143343 

Method and injector for introducing a vaporous heat carrier into a liquid product


A method for introducing a vaporous heat carrier into a liquid product, in particular a food product or beverage, and more particularly viscous products, for example desserts, sauces or concentrates, includes using the carrier to heat the product to form a germ-free product. An injector for carrying out the method is also described.
Gea Tds Gmbh


05/26/16
20160143276 

Surface disinfectant with residual biocidal property


A disinfectant formulation is provided imparting a residual biocidal property. The disinfectant formulation is used to treat a surface to impart a film having a capacity to quickly kill bacteria and other germs for at least 24 hours after deposit of the film on a treated surface.
W.m. Barr & Company, Inc.


05/26/16
20160143275 

Surface disinfectant with residual biocidal property


A disinfectant formulation is provided imparting a residual biocidal property. The disinfectant formulation is used to treat a surface to impart a film having a capacity to quickly kill bacteria and other germs for at least 24 hours after deposit of the film on a treated surface.
W.m. Barr & Company, Inc.


05/19/16
20160142525 

Germ barrier for a telecommunication device, and use thereof


A germ protector for a telecommunications device comprising a body portion having at least one open end for receiving the telecommunications device, the body portion being flexible to conform to the telecommunications device; wherein at least a portion of an inner surface of the body portion is coated with a decontaminant.. .

05/19/16
20160141612 

Anodes comprising germanium for lithium-ion devices


An anode material for a lithium ion device includes an active material including germanium and boron. The weight percentage of the germanium is between about 45 to 80 weight % of the total weight of the anode material and the weight percentage of the boron is between about 2 to 20 weight % of the total weight of the anode material.
Storedot Ltd.


05/19/16
20160141520 

Germanium-centered dendrimer compound, and organic optoelectric element comprising same


Germanium-centered dendrimer compounds and organic optoelectronic devices comprising the same are provided. The organic optoelectronic device comprising the compound is capable of implementing high light-emitting ability and light-emitting efficiency, and improving thermal stability (heat resistance) of the organic optoelectronic devices, thereby increasing the lifetime thereof..
Chung-ang University Industry-academic Cooperation Foundation


05/19/16
20160141423 

Contacts for highly scaled transistors


A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (s/d) regions, a channel between the first and second s/d regions, a gate engaging the channel, and a contact feature connecting to the first s/d region.
Taiwan Semiconductor Manufacturing Company, Ltd.


05/19/16
20160141398 

Tunnel field-effect transistor (tfet) with supersteep sub-threshold swing


Technologies are generally described herein generally relate to tunnel field-effect transistor (tfets) structures with a gate-on-germanium source (goges) on bulk silicon substrate for sub 0.5v (vdd) operations. In some examples, the goges structure may include an increase in tunneling area and, thereby, a corresponding increases in the on-state current ion.
University Of Calcutta


05/19/16
20160141395 

Sige and si finfet structures and methods for making the same


Finfet structures and methods for making the same. A method includes: creating a plurality of silicon fins on a first region of a substrate, creating a plurality of silicon-germanium fins on a second region of the substrate, adjusting a silicon fin pitch of the plurality of silicon fins to a predetermined value, and adjusting a silicon-germanium fin pitch of the plurality of silicon-germanium fins to a predetermined value, where the creating steps are performed in a manner that silicon material and silicon-germanium material used in making the plurality of fins will be on the semiconductor structure at a same time..
International Business Machines Corporation


05/19/16
20160141377 

Low temperature spacer for advanced semiconductor devices


Embodiments of the present invention provide semiconductor structures and methods for making the same that include a boron nitride (bn) spacer on a gate stack, such as a gate stack of a planar fet or finfet. The boron nitride spacer is fabricated using atomic layer deposition (ald) and/or plasma enhanced atomic layer deposition (peald) techniques to produce a boron nitride spacer at relatively low temperatures that are conducive to devices made from materials such as silicon (si), silicon germanium (sige), germanium (ge), and/or iii-v compounds.
International Business Machines Corporation


05/19/16
20160141368 

Tall strained high percentage silicon-germanium fins


The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming one or more tall strained silicon germanium (sige) fins on a semiconductor on insulator (soi) substrate. The fins have a germanium (ge) concentration which may differ from the ge concentration within the top layer of the soi substrate.
Globalfoundries Inc.


05/19/16
20160141182 

Slurry compositions and methods of fabricating semiconductor devices using the same


Provided are slurry compositions for polishing a germanium-containing layer and methods of fabricating a semiconductor device using the same. The slurry composition may include a polishing particle, an oxidizing agent, a polishing accelerator, and a selectivity control agent.
Samsung Electronics Co., Ltd.




Germ topics: Semiconductor, Transistors, Semiconductor Material, Ion Source, Optical Fiber, Photodiode, Electrical Signal, Level Shift, Source Follower, Transimpedance Amplifier, Movable Barrier, Prophylactic, Immunoglobulin, Immunoglobulins, Evaporator

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