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This page is updated frequently with new Germ-related patent applications. Subscribe to the Germ RSS feed to automatically get the update: related Germ RSS feeds. RSS updates for this page: Germ RSS RSS


Deposition method and deposition apparatus

Date/App# patent app List of recent Germ-related patents
09/25/14
20140289880
 Transgenic chickens patent thumbnailnew patent Transgenic chickens
The present invention is transgenic chickens obtained from long-term cultures of avian pgcs and techniques to produce and transgenic birds derived from prolonged pgc cultures. In some embodiments, these pgcs can be transfected with genetic constructs to modify the dna of the pgc, specifically to introduce a transgene encoding an exogenous protein.
09/25/14
20140289001
 System and method for recruiting subjects for research studies and clinical trials over the internet patent thumbnailnew patent System and method for recruiting subjects for research studies and clinical trials over the internet
A system and method for managing private records and other confidential information is provided, including a patient interface that allows patients to configure privileges for various parties to access various private records or portions thereof. A database can be accessed via a privacy engine, which respects the configured privileges and allows searching for private records.
09/25/14
20140288260
 Organometallic monomers and high refractive index polymers derived therefrom patent thumbnailnew patent Organometallic monomers and high refractive index polymers derived therefrom
Synthesis of thianthrene moiety containing silane and germane monomers and their polymerization is presented. The polymers show high refractive index, high transparency and excellent thermal stability.
09/25/14
20140287925
 Solutions of cipc and of a terpene or of a terpene oil and their uses for the antigerminative treatment of bulbs or tubers patent thumbnailnew patent Solutions of cipc and of a terpene or of a terpene oil and their uses for the antigerminative treatment of bulbs or tubers
The present invention relates to solutions of cipc and of one or more terpenes or terpene oils, such as eugenol, clove oil, their salts, and mixtures thereof, for use in methods for the antigerminative treatment of bulbs and tubers. This use is particularly appropriate for the treatment of potato tubers.
09/25/14
20140287924
 Novel strigolactone analogues and their use patent thumbnailnew patent Novel strigolactone analogues and their use
Novel compounds of formula (i) their use as germination trap for parasitic weeds, for the regulation of branching, tillering and root development, for enhancement of cambium growth, for the regulation of hyphal growth of mycorrhizal fungi and compositions comprising compounds of formula (i) and insecticides and/or fungicides.. .
09/25/14
20140287588
 Deposition method and deposition apparatus patent thumbnailnew patent Deposition method and deposition apparatus
[solving means] a deposition method according to an embodiment of the present invention includes a process of etching a natural oxide film formed on a surface of a silicon substrate. The surface of the silicon substrate is cleaned.
09/25/14
20140287070
 Dirty dog anti-bacterial paw spritz patent thumbnailnew patent Dirty dog anti-bacterial paw spritz
Dirty dog anti-bacterial paw spritz is an all-natural way to cut down on germs and bacteria found on dogs paws. It is sprayed on the dog's paws after being exposed to dirt, germs and bacteria.
09/25/14
20140285443
 Method and system for keyglove fingermapping an input device of a computing device patent thumbnailnew patent Method and system for keyglove fingermapping an input device of a computing device
An input device and system for a computing device. The input device includes a plurality of touch-sensitive registration elements for positioning at various locations of at least one finger of at least one hand of a user of the computing device.
09/25/14
20140284769
 Method of forming a strained silicon layer patent thumbnailnew patent Method of forming a strained silicon layer
The present disclosure concerns a method involving: forming a strained silicon germanium layer by epitaxial growth over a silicon layer disposed on a substrate; implanting atoms to amorphize the silicon layer and a lower portion of the silicon germanium layer, without amorphizing a surface portion of the silicon germanium layer; and annealing, to at least partially relax the silicon germanium layer and to re-crystallize the lower portion of the silicon germanium layer and the silicon layer, so that the silicon layer becomes a strained silicon layer.. .
09/25/14
20140283447
 Seed pellets and soils for growing plants patent thumbnailnew patent Seed pellets and soils for growing plants
The invention relates to the field of seed germination and growing of plants. A composition comprising a clay, an inert material, optionally a fibrous material, and a fourth component is provided, characterized in that said fourth component comprises a cation selected from the group consisting of al, zr and ti and an anion selected from the group consisting of oxyhydroxide, oxychloride, nitrate, sulfate, chloride, hydroxide and alkoxide, and wherein the concentration of said fourth component ranges from 0.1 to 70 percent by weight (w %), preferably 0.5-25 w %, more preferably 1-10 w %, of the total weight of the clay, the inert material, and optionally the fibrous material, together..
09/25/14
20140283302
new patent Device for the insertion in bedsteads, bedding boxes or bed frames for use as a lying surface with a mattress on top of it for primarily a single person
Device for insertion in bedsteads for use as lying surface with mattress on top. Prior art according to, e.g., german product testing institute stiftung warentest almost don't accomplish lying profile adaptation to human body as function of changing between supine or lateral position.
09/18/14
20140283225
Early detection and elimination of non germ-line events in the soybean transformation process
The present disclosure relates in part to a method for identifying a soybean germline transformant from a population of soybean transformants which are comprised of a combination of soybean non-germline transformants and soybean germline transformants. The soybean non-germline transformants are identified and eliminated early in the transformation process.
09/18/14
20140283223
High temperature germinating lettuce seeds
The present invention relates to lettuce plants (lactuca sativa l.) which may comprise a genetic determinant, which when homozygously present in a seed, provides the seed in an unprimed state with the capability to germinate at a high temperature, which genetic determinant is obtainable from a lettuce plant which may comprise said genetic determinant, representative seed which was deposited with the ncimb under accession number ncimb 41914, ncimb 41915, ncimb 41916, ncimb 41917, ncimb 41918, ncimb 41919, ncimb 41922, ncimb 41923, and ncimb 41926.. .
09/18/14
20140283213
Markers linked to reniform nematode resistance
This disclosure concerns methods and compositions for identifying cotton plants that have a reniform nematode resistance trait. Some embodiments concern molecular markers to identify, select, and/or construct reniform nematode resistant plants and germplasm, or to identify and counter-select relatively susceptible plants.
09/18/14
20140283212
Markers linked to reniform nematode resistance
This disclosure concerns methods and compositions for identifying cotton plants that have a reniform nematode resistance trait. Some embodiments concern molecular markers to identify, select, and/or construct reniform nematode resistant plants and germplasm, or to identify and counter-select relatively susceptible plants.
09/18/14
20140275512
Preparation of malto-oligosaccharides
Disclosed is a method for preparing a mixture of malto-oligosaccharides. Generally, a dry-milled corn fraction, such as a corn flour from which germ and fiber have been removed, is subjected to hydrolysis, typically catalyzed with acid or an enzyme such as an α-amylase enzyme, under conditions suitable to form a mixture of malto-oligosaccharides.
09/18/14
20140273493
Hydrogen plasma cleaning of germanium oxide surfaces
Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead.
09/18/14
20140273423
Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process
One method disclosed herein includes forming a layer of silicon/germanium having a germanium concentration of at least 30% on a semiconducting substrate, forming a plurality of spaced-apart trenches that extend through the layer of silicon/germanium and at least partially into the semiconducting substrate, wherein the trenches define a fin structure for the device comprised of a portion of the substrate and a portion of the layer of silicon/germanium, the portion of the layer of silicon/germanium having a first cross-sectional configuration, forming a layer of insulating material in the trenches and above the fin structure, performing an anneal process on the device so as to cause the first cross-sectional configuration of the layer of silicon/germanium to change to a second cross-sectional configuration that is different from the first cross-sectional configuration, and forming a final gate structure around at least a portion of the layer of silicon/germanium having the second cross-sectional configuration.. .
09/18/14
20140273382
Methods of fabricating semiconductor devices
A substrate including an nmos transistor region and a pmos transistor region is prepared. A silicon-germanium layer is formed on the pmos transistor region.
09/18/14
20140273381
Method and structure for pfet junction profile with sige channel
A semiconductor structure including a p-channel field effect transistor (pfet) device located on a surface of a silicon germanium (sige) channel is provided in which the junction profile of the source/drain region is abrupt. The abrupt source/drain junctions for pfet devices are provided by forming an n- or c-doped si layer directly beneath a sige channel layer which is located above a si substrate.
09/18/14
20140273366
Semiconductor devices and methods of manufacture thereof
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a workpiece including an n-type field effect transistor (n-fet) region, a p-type fet (p-fet) region, and an insulating material disposed over the n-fet region and the p-fet region.
09/18/14
20140272990
Silicon and germanium dyes for use in genetic identity
Si- and ge-based dyes and methods of using same.. .
09/18/14
20140272706
Resist composition and method for forming pattern
A resist composition includes: a solvent; and a resin in the solvent, the resin being prepared by the hydrolysis and condensation of an alkoxy group-containing compound that contains an alkoxy group bound to a silicon atom or a germanium atom in the presence of an acid or an alkali, wherein a portion of the resist composition irradiated with an energy radiation is insoluble in a developing solution.. .
09/18/14
20140272043
Method for producing fresh milk having a longer shelf life
A method for producing fresh milk having a longer shelf life involves providing raw milk and performing an at least two-step centrifugal germ removal process of the raw milk before a standardization process of the raw milk is carried out. A method may also include performing a first step of a two-step centrifugal germ removal process before a skimming process separating skimmed milk is carried out and performing a second step of the two-step centrifugal germ removal process during the carrying out of the skimming process separating skimmed milk..
09/18/14
20140271823
Inhibition of hypoxia-inducible factor activity with carica papaya extracts
An extract of carica papaya leaves obtained from a plant of age six months and younger from the date of germination of the seed is used as an inhibitor of hif to effectively block hypoxia-inducible factor (hif) function and methods of use thereof. More specifically it relates to the use of the carica papaya plant extract to eliminate unwanted cells by inhibiting hif in the prevention and treatment of hypoxia-related conditions and diseases such as inflammatory diseases, vascular diseases, cancer and infectious diseases.
09/18/14
20140271343
Lead-free solder composition
A solder composition includes about 4% to about 25% by weight tin, about 0.1% to about 8% by weight antimony, about 0.03% to about 4% by weight copper, about 0.03% to about 4% by weight nickel, about 66% to about 90% by weight indium, and about 0.5% to about 9% by weight silver. The composition can further include about 0.2% to about 6% by weight zinc, and, independently, about 0.01% to about 0.3% by weight germanium.
09/18/14
20140271340
Silver alloy
A silver alloy with exceptional resistance to both tarnishing and firestain includes at least 92.50% silver, from 0.70 to 1.65% germanium, from 1.30 to 1.80% indium, from 0.000 to 0.015% boron, not more than 1.0% palladium and not more than 0.20% copper.. .
09/18/14
20140264755
Strained silicon nfet and silicon germanium pfet on same wafer
Various embodiments form silicon and silicon germanium fins on a semiconductor wafer. In one embodiment a semiconductor wafer is obtained.
09/18/14
20140264617
Hk/mg process flows for p-type semiconductor devices
The present disclosure provides semiconductor device structures with a first pmos active region and a second pmos active region provided within a semiconductor substrate. A silicon germanium channel layer is only formed over the second pmos active region.
09/18/14
20140264602
Forming strained and relaxed silicon and silicon germanium fins on the same wafer
Various embodiments form strained and relaxed silicon and silicon germanium fins on a semiconductor wafer. In one embodiment a semiconductor wafer is formed.
09/18/14
20140264601
Strained silicon nfet and silicon germanium pfet on same wafer
Various embodiments form silicon and silicon germanium fins on a semiconductor wafer. In one embodiment a semiconductor wafer is obtained.
09/18/14
20140264600
Formation of bulk sige fin with dielectric isolation by anodization
A method of fabricating a semiconductor device is provided that includes providing a material stack that includes a silicon layer, a doped semiconductor layer, and an undoped silicon germanium layer. At least one fin structure is formed from the material stack by etching through the undoped silicon germanium layer, the doped semiconductor layer, and etching a portion of the silicon-containing layer.
09/18/14
20140264595
Forming strained and relaxed silicon and silicon germanium fins on the same wafer
Various embodiments form strained and relaxed silicon and silicon germanium fins on a semiconductor wafer. In one embodiment a semiconductor wafer is formed.
09/18/14
20140264594
Formation of bulk sige fin with dielectric isolation by anodization
A method of fabricating a semiconductor device is provided that includes providing a material stack that includes a silicon layer, a doped semiconductor layer, and an undoped silicon germanium layer. At least one fin structure is formed from the material stack by etching through the undoped silicon germanium layer, the doped semiconductor layer, and etching a portion of the silicon-containing layer.
09/18/14
20140264555
Silicon on germanium
A monolayer or partial monolayer sequencing processing, such as atomic layer deposition (ald), can be used to form a semiconductor structure of a silicon film on a germanium substrate. Such structures may be useful in high performance electronic devices.
09/18/14
20140264517
Semiconductor devices having a silicon-germanium channel layer and methods of forming the same
Semiconductor devices having a silicon-germanium channel layer and methods of forming the semiconductor devices are provided. The methods may include forming a silicon-germanium channel layer on a substrate in a peripheral circuit region and sequentially forming a first insulating layer and a second insulating layer on the silicon-germanium channel layer.
09/18/14
20140264501
Depletion-mode field-effect transistor-based phototransitor
A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel.
09/18/14
20140264484
Fluorine-doped channel silicon-germanium layer
Methods for forming p-type channel metal-oxide-semiconductor field effect transistors (pmosfets) with improved interface roughness at the channel silicon-germanium (csige) layer and the resulting devices are disclosed. Embodiments may include designating a region in a substrate as a channel region, forming a csige layer above the designated channel region, and implanting fluorine directly into the csige layer.
09/18/14
20140264458
Heterojunction bipolar transistor having a germanium extrinsic base utilizing a sacrificial emitter post
Disclosed is a method for fabricating a heterojunction bipolar transistor (“hbt”), and the resulting structure. The method includes forming a germanium layer over a sige layer, the sige layer including an intrinsic base.
09/18/14
20140264457
Heterojunction bipolar transistor having a germanium raised extrinsic base
Disclosed is a heterojunction bipolar transistor (“hbt”) including an intrinsic base in a sige layer. The hbt has a raised germanium extrinsic base over the sige layer.
09/18/14
20140264443
Sige surface passivation by germanium cap
The present disclosure relates to a transistor device having a germanium cap layer that is able to provide for a low interface trap density, while meeting effective oxide thickness scaling requirements, and a related method of fabrication. In some embodiments, the disclosed transistor device has a channel layer disposed within a semiconductor body at a location between a source region and a drain region.
09/18/14
20140264439
Semiconductor structure
A semiconductor structure is provided. The semiconductor structure includes a substrate, at least a first n-type germanium (ge) structure and at least a first p-type ge structure.
09/18/14
20140264385
Manufacture of wafers of wide energy gap semiconductor material for the integration of electronic and/or optical and/or optoelectronic devices
A method is provided for fabricating a wafer of semiconductor material intended for use for the integration of electronic and/or optical and/or optoelectronic devices. The method comprises: providing a starting wafer of crystalline silicon (205); on the starting wafer of crystalline silicon, epitaxially growing a buffer layer (210) consisting of a sub-stoichiometric alloy of silicon and germanium; epitaxially growing on the buffer layer a layer (225) of a semiconductor material having an energy gap greater than that of the crystalline silicon constituting the starting wafer, wherein the layer of semiconductor material having an energy gap greater than that of the crystalline silicon is grown so to have a thickness capable of constituting a substrate for the integration therein of electronic and/or optical and/or optoelectronic devices..
09/18/14
20140264362
Method and apparatus for forming a cmos device
A method and apparatus for forming a cmos device are provided. The cmos device may include an n-type channel region formed of an iii-v material and a p-type channel region formed of a germanium material.
09/18/14
20140264049
Small anode germanium (sage) well radiation detector system and method
A small anode germanium well (sage well) radiation detector system/method providing for low capacitance, short signal leads, small area bottom-oriented signal contacts, enhanced performance independent of well diameter, and ability to determine radiation directionality is disclosed. The system incorporates a p-type bulk germanium volume (pgev) having an internal well cavity void (iwcv).
09/18/14
20140264030
Methods and apparatus for mid-infrared sensing
A chip-scale, air-clad semiconductor pedestal waveguide can be used as a mid-infrared (mid-ir) sensor capable of in situ monitoring of organic solvents and other analytes. The sensor uses evanescent coupling from a silicon or germanium waveguide, which is highly transparent in the mid-ir portion of the electromagnetic spectrum (e.g., between λ=1.3 μm and λ=6.5 μm for silicon and λ=1.3 μm and λ=12.0 μm for germanium), to probe the absorption spectrum of the fluid surrounding the waveguide.


Popular terms: [SEARCH]

Germ topics: Semiconductor, Transistors, Semiconductor Material, Ion Source, Optical Fiber, Photodiode, Electrical Signal, Level Shift, Source Follower, Transimpedance Amplifier, Movable Barrier, Prophylactic, Immunoglobulin, Immunoglobulins, Evaporator

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