|| List of recent Germ-related patents
| Use of the soybean sucrose synthase promoter to increase plant seed lipid content|
Recombinant dna constructs comprising the soybean sucrose synthase promoter operably linked to polynucleotides encoding transcription factors such as odp1, lec1 and fusca3 are disclosed. These constructs are used for increasing oil content while maintaining normal germination in oilseed plants.
Pioneer Hi-bred International Inc
| Haplotypes associated with improved stacked trait performance in transgenic plants|
The present invention provides methods and compositions for the identification and selection of loci modulating phenotypic expression of an herbicide tolerance trait in plant breeding. In addition, methods are provided for screening germplasm entries for the performance and expression of this trait..
Monsanto Tecnology Llc
Provided is an arthropod male germline gene expression system suitable for conditional expression of an effector gene in an arthropod male germline. The system comprises a first expression unit comprising an effector gene and a promoter therefor operably linked thereto; and a second expression unit.
| Systems and methods for coordinating input devices with rendered content being provided to platforms|
Systems, methods, and computer readable media for coordinating inputs received from input devices for interacting with rendered content being transmitted to a platform presenting the rendered content are provided. The input devices may be used in lieu of any user interface that may be germane to the platform to enable an enhanced experience with the rendered content..
| Semiconductor device having buried bit lines and fabricating the same|
A semiconductor device includes body lines, formed substantially perpendicular to a substrate, and having recessed sidewalls, buried bit lines, buried in the recessed sidewalls, and including a metal silicide, and a barrier layer interposed between each of the buried bit lines and the body lines corresponding thereto, and containing germanium.. .
Sk Hynix Inc.
| Precursors for gst films in ald/cvd processes|
The present invention is a process of making a germanium-antimony-tellurium alloy (gst) or germanium-bismuth-tellurium (gbt) film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. The invention is also related to making antimony alloy with other elements using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony or silylbismuth precursor is used as a source of antimony or bismuth..
Air Products And Chemicals, Inc.
| Device isolation in finfet cmos|
Embodiments herein provide approaches for device isolation in a complimentary metal-oxide fin field effect transistor. Specifically, a semiconductor device is formed with a retrograde doped layer over a substrate to minimize a source to drain punch-through leakage.
Renesas Electronics Corporation
| Method for fabricating finfet on germanium or group iii-v semiconductor substrate|
The present invention provides a method for fabricating a finfet on a germanium or group iii-v semiconductor substrate. The process flow of the method mainly includes: forming a pattern structure for a source, a drain and a fine bar connecting the source and the drain; forming an oxide isolation layer; forming a gate structure, a source and a drain structure; and forming metal contacts and metal interconnections.
| Plant growth regulator and use thereof|
A plant growth regulator containing glutathione allows increasing harvest index. This provides a technique for specifying a control factor for a plant, thereby effectively controlling germination, growth, anthesis etc.
Japan Science And Technology Agency
| Method of producing preform for coupled multi-core fiber, producing coupled multi-core fiber, and coupled multi-core fiber|
Provided is a method of producing a preform 10p for a coupled multi-core fiber including: an arranging process p1 for arranging a plurality of core glass bodies 11r and a clad glass body 12r in such a way that the plurality of core glass bodies 11r are surrounded by the clad glass body 12r; and a collapsing process p2 for collapsing a gap between the core glass bodies 11r and the clad glass body 12r, wherein the respective core glass bodies 11r have outer regions 16 having a predetermined thickness from the periphery surfaces and made of silica glass undoped with germanium, and the clad glass body 12r is made of silica glass having a refractive index lower than a refractive index of the outer regions of the core glass bodies 11r.. .
Non-planar sige channel pfet
Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a channel layer formed of a germanium compound having a germanium concentration b formed on a semiconductor substrate having a germanium concentration of a, the germanium concentration of the substrate a being less than the germanium concentration of the channel layer b.
Taiwan Semiconductor Manfacturing Company Limited
Undoped epitaxial layer for junction isolation in a fin field effect transistor (finfet) device
Approaches for isolating source and drain regions in an integrated circuit (ic) device (e.g., a fin field effect transistor (finfet)) are provided. Specifically, the finfet device comprises a gate structure formed over a finned substrate; an isolation oxide beneath an active fin channel of the gate structure; an embedded source and a drain (s/d) formed adjacent the gate structure and the isolation oxide; and an undoped epitaxial (epi) layer between the embedded s/d and the gate structure.
Controlling the shape of source/drain regions in finfets
An integrated circuit structure includes a fin field-effect transistor (finfet) including a semiconductor fin over and adjacent to insulation regions; and a source/drain region over the insulation regions. The source/drain region includes a first and a second semiconductor region.
Taiwan Semiconductor Manufacturing Company, Ltd.
Semiconductor device having v-shaped region
Among other things, a semiconductor device or transistor and a method for forming the semiconductor device are provided for herein. The semiconductor device comprises one or more v-shaped recesses in which stressed monocrystalline semiconductor material, such as silicon germanium, is grown, to form at least one of a source or a drain of the semiconductor device.
Taiwan Semiconductor Manufacturing Company Limited
Solder alloy, solder paste, and electronic circuit board
A solder alloy of a tin-silver-copper solder alloy, containing tin, silver, antimony, bismuth, copper, and nickel, and substantially does not contain germanium, relative to the total amount of the solder alloy, the silver content is more than 1.0 mass % and less than 1.2 mass %, the antimony content is 0.01 mass % or more and 10 mass % or less, and the bismuth content is 0.01 mass % or more and 3.0 mass % or less.. .
Harima Chemicals, Incorporated
Compound semiconductor solar cell
Provided is a compound semiconductor solar cell (2) with improved conversion efficiency. The compound semiconductor solar cell includes a substrate (4), a back electrode (6) disposed on the substrate, a p-type compound semiconductor light absorber layer (8) disposed on the back electrode, an n-type compound semiconductor buffer layer (10) disposed on the p-type compound semiconductor light absorber layer, and a transparent electrode (12) disposed on the n-type compound semiconductor buffer layer.
Apparatus for cleaning and sterilizing interior of shoe
Provided is an apparatus for cleaning and sterilizing an interior of a shoe which generates ultrasonic wind of a whirlwind type in the interior of the shoe to remove foreign substances from the interior of the shoe and which injects ultra fine particles of germicide solution into the interior of the shoe at a high pressure to sterilize the interior of the shoe, so that the interior of shoe may be hygienically and cleanly maintained. The apparatus includes a housing opened or closed with a door; a shoe supporting member mounted on a top end of a support pillar having a predetermined length and vertically installed in an inner space of the housing to support the shoe by hanging the shoe thereto; a vibration guide pipe fixed to an inside of the shoe supporting member; and a nozzle tube having a predetermined length, which is movably installed on a central axis of the vibration guide pipe in a horizontal state and formed of a hose, wherein compressed air and chemical solution are mixed at a rear end of the nozzle tube and sprayed through a front end nozzle of the nozzle tube so that the nozzle tube is subject to a vibration operation, causing the nozzle tube to innumerably collide with an inner wall surface of the vibration guide pipe..
Duremaeul Co., Ltd.
Odor-absorbing materials and processes for their preparation and use
A slightly puffed, low density, moisture-adsorbing and odor-absorbing additive that can readily remove undesirable odors from a confined space is produced from re-purposed spent carbon materials obtained from other processes. The product is particularly suitable as an addition to animal litters and the like with possible uses in human applications.
Kent Pet Group, Inc.
Method to identify asian soybean rust resistance quantitative trait loci in soybean and compositions thereof
The present invention is in the field of plant breeding and disease resistance. More specifically, the invention includes a method for breeding soybean plants containing quantitative trait loci that are associated with resistance to asian soybean rust (asr), a fungal disease associated with phakopsora spp.
Method for depositing metal layers on germanium-containing films using metal chloride precursors
A method is provided for forming a semiconductor device. According to one embodiment, the method includes providing a substrate having a ge-containing film thereon, identifying a first plasma processing recipe that uses a metal chloride precursor to deposit a first metal layer on the ge-containing film at a higher rate than the ge-containing film is etched by the metal chloride precursor, identifying a second plasma processing recipe that uses the metal chloride precursor to etch the ge-containing film at a higher rate than a second metal layer is deposited on the ge-containing film by the metal chloride precursor, performing the first plasma processing recipe to deposit the first metal layer on the ge-containing film, and performing the second plasma processing recipe to deposit the second metal layer on the first metal layer, and where the second metal layer is deposited at a higher rate than the first metal layer..
Method of manufacturing semiconductor device
There is provided a method of manufacturing a semiconductor device including: preparing a semiconductor substrate having an active region; forming a dielectric layer for gate insulation on the active region; forming a curing layer with a material containing germanium (ge) on the dielectric layer; heat-treating the curing layer; and removing the curing layer. The germanium-containing material may be silicon germanium (sige) or germanium (ge)..
Medium for random laser and manufacturing process of the same
A process for fabricating a device capable of random lasing comprising a substrate and a rare earth-doped glass fabricated on the substrate in the form of a waveguide, wherein the glass comprises a germanium glass, a titanium glass or a chalcogenide glass, where the process comprises ablating a target glass with incident radiation from an ultrafast laser in the presence of the substrate to deposit a quantity of the target glass on the substrate and applying rastering to ablate the target glass uniformly. The ultrafast laser emits pulses of 15 ps or less and the relative position of the laser spot on the target glass with respect to the substrate is constant during the ablation and wherein the gaussian intensity profile of the laser beam has a spot area less than 3000 μm2..
Method for manufacturing germanide interconnect structures and corresponding interconnect structures
Method for forming an interconnect structure, comprising the steps of: forming a recessed structure in a dielectric material on a substrate; at least partially filling said recessed structure with a metal chosen from the group consisting of copper, nickel and cobalt; introducing the substrate in a cvd reactor; bringing the substrate in the cvd reactor to a soak temperature and subsequently performing a soak treatment by supplying a germanium precursor gas to the cvd reactor at the soak temperature, thereby substantially completely converting the metal in the recessed structure to a germanide.. .
Strain tunable light emitting diodes with germanium p-i-n heterojunctions
Tunable p-i-n diodes comprising ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes.
Chemical mechanical polishing method using slurry composition containing n-oxide compound
The present disclosure relates to a chemical mechanical polishing (cmp) slurry composition that provides for a high metal to dielectric material selectivity along with a low rate of metal recess formation. In some embodiments, the disclosed slurry composition has an oxidant and an etching inhibitor.
Ultraviolet germicidal irradiation system
A modular germicidal light grid system for use inside an air treatment apparatus that has a plenum in which a stream of air is enclosed. The system comprises at least one elongate member and at least one lamp assembly.
Polysilicon photodetector, methods and applications
A silicon photonic photodetector structure, a method for fabricating the silicon photonic photodetector structure and a method for operating a silicon photonic photodetector device that results from the photonic photodetector structure each use a strip waveguide optically coupled with a polysilicon material photodetector layer that may be contiguous with a semiconductor material slab to which is located and formed a pair of electrical contacts separated by the polysilicon material photodetector layer. Alternatively, the pair of electrical contacts may be located and formed upon separated locations of the polysilicon photodetector layer.
Plasma-free metal etch
Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride.
Selective etch for metal-containing materials
Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride.
Method of accelerating the growth and development of trees and shrubs via enhanced root development
A method and container for developing seedlings includes germinating the seeds and air pruning the seedlings to a depth of about 3 inches.. .
Multi-component system for treating enclosed environments
Described herein is a heating system where air is drawn into a system where hot gas is injected into it. The air is then discharged at a regulated temperature into an environment through ductwork to heat environments to elevated temperatures and employing functional modules to further condition the air to humidify, dehumidify, decontaminate with airborne free-radicals, and filtrate in both stationary and portable applications.
Systems and methods for implementation of a virtual education hospital
A system for and method of facilitating collaboration among medical and healthcare professionals that includes presenting a request for initiating an electronic discussion via a communication network, enabling medical or healthcare professionals to participate in the discussion and to view medical record data germane to the discussion, depersonalizing the medical record data made available to the medical and healthcare professionals to remove any patient-identifying data, and categorizing and tagging discrete medical terms contained in the medical record data to enable association of the electronic medical discussion with an area of expertise of the medical or healthcare professionals.. .
Complex compounds of germanium, methods for producing same, and drugs
Where ad is a derivative of a nitrogenous base of the purine series that has antiviral activity and can be selected from guanine derivatives, such as acyclovir, valacyclovir, gancyclovir and pencyclovir, or from adenine derivatives, such as vidarabine; ca is a hydroxycarboxylic acid which can be selected from acids such as (but not limited to) citric acid, lactic acid and malic acid; aa is an amino acid which can be selected from various a-amino acids, such as arginine, glycine, lysine and threonine, and where x=1-2, y=2-4 and z=0-2. Complex compounds of germanium have a high level of antiviral and immune-stimulating activity and are readily soluble in water.
Germanium-based glass polyalkenoate cement
Disclosed herein are compositions and methods for making germanium-based glass polyalkenoate cements. Also disclosed are methods for their use as bone cements for bone augmentation procedures..
Silicon germanium processing
Methods of selectively etching silicon germanium relative to silicon are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor.
Applied Materials, Inc.
Etch suppression with germanium
Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor.
Applied Materials, Inc.
Method for the formation of fin structures for finfet devices
A soi substrate layer formed of a silicon semiconductor material includes adjacent first and second regions. A portion of the silicon substrate layer in the second region is removed such that the second region retains a bottom portion made of the silicon semiconductor material.
Method for producing lactic acid
It is intended to provide a fungus of the genus rhizopus having improved ability to produce lactic acid and a method for producing lactic acid using the fungus. The present invention provides a method for improving the lactate dehydrogenase activity of a fungus of the genus rhizopus, comprising germinating a spore of a fungus of the genus rhizopus in a culture medium containing a surfactant under specific conditions to obtain a mycelium, and a method for producing lactic acid using the mycelium of the fungus of the genus rhizopus..
Epitaxial structure and process thereof for non-planar transistor
An epitaxial structure for a non-planar transistor is provided. A substrate has a fin-shaped structure.
United Microelectronics Corp.
Conductivity improvements for iii-v semiconductor devices
Conductivity improvements in iii-v semiconductor devices are described. A first improvement includes a barrier layer that is not coextensively planar with a channel layer.
Methods of forming finfet devices with alternative channel materials
Are methods and devices that involve formation of alternating layers of different semiconductor materials in the channel region of finfet devices. The methods and devices disclosed herein involve forming a doped silicon substrate fin and thereafter forming a layer of silicon/germanium around the substrate fin.
Melt stabilization and vapor-phase synthesis of cesium germanium halides
The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt.
The Government Of The United States Of America, As Represented By The Secretary Of The Navy