|| List of recent Germ-related patents
|Resistance to gray leaf spot in maize|
The present invention is in the field of plant breeding and disease resistance. More specifically, the invention includes a method for breeding corn plants containing quantitative trait loci that are associated with resistance to gray leaf spot, a fungal disease associated with cercospora spp.
|Rat embryonic stem cell|
The present invention provides a rat embryonic stem cell characterized by having the following properties of (a) expressing oct3/4 gene and nanog gene, (b) positive for alkaline phosphatase activity, (c) having an embryoid body forming ability, (d) expressing ssea (stage-specific embryonic antigen)-1 and ssea-4, (e) having the same number of chromosomes as does a normal rat cell, (f) capable of being subcultured and holding the undifferentiated state, (g) having in vitro pluripotency, (h) having a potential to differentiate for cells of three embryonic germ lineages, (i) having teratoma formation ability, and (j) having an ability to produce a chimeric rat, a method of establishing the aforementioned rat embryonic stem cell and the like.. .
|Mmtv-sv40-spy1a and spy1a-ptre transgenic mouse models|
In one aspect, the invention provides a transgenic non-human animal model havings germ cells and somatic cells containing an endogenous mmtv-sv40-spy1a gene sequence introduced into said animal model, or an ancestor of said animal model at an embryonic stage, wherein said gene sequence comprises a mouse mammary tumor virus gene (mmtv), a functionally disrupted sv40 gene (sv40) and a human spy1a gene. In another aspect, the present invention provides a transgenic non-human animal model whose germ cells and somatic cells contain an endogenous spy1a-ptre-tight gene sequence introduced into said animal model or an ancestor of said animal model at an embryonic stage.
|Back contact solar cells with effective and efficient designs and corresponding patterning processes|
Laser based processes are used alone or in combination to effectively process doped domains for semiconductors and/or current harvesting structures. For example, dopants can be driven into a silicon/germanium semiconductor layer from a bare silicon/germanium surface using a laser beam.
|Protocols for making hepatocytes from embryonic stem cells|
This disclosure provides a newly developed strategy and particular options for differentiating pluripotent stem cells into cells of the hepatocyte lineage. Many of the protocols are based on a strategy in which the cells are first differentiated into early germ layer cells, then into hepatocyte precursors, and then into mature cells.
|Plating design and process for improved hermeticity and thermal conductivity of gold-germanium solder joints|
A solder joint and method of soldering are disclosed. Formation is controlled of atomic vacancies in a surface layer of a component to be soldered.
|Stabilized whole grain flour and method of making|
Stabilized whole grain flours having a fine particle size and which exhibit good baking functionality are produced with high throughput using two bran and germ fractions and an endosperm fraction. One bran and germ fraction is a coarse fraction which is subjected to two stage grinding, but the second bran and germ fraction is a low ash, fine bran and germ fraction which is sufficiently fine so that it does not need to be subjected to grinding thereby reducing starch damage and increasing production with reduced grinding equipment load.
|Semiconductor laser and method of manufacturing the same|
Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate..
|Method and structure to boost mosfet performance and nbti|
The present disclosure provides one embodiment of a method forming a p-type field effect transistor (pfet) structure. The method includes forming a mask layer on a semiconductor substrate, the mask layer including an opening that exposes a semiconductor region of the semiconductor substrate within the opening; forming a n-type well (n-well) in the semiconductor region by performing an ion implantation of a n-type dopant to the semiconductor substrate through the opening of the mask layer; and performing a germanium (ge) channel implantation to the semiconductor substrate through the opening of the mask layer, forming a ge channel implantation region in the n-well..
|Techniques for forming non-planar germanium quantum well devices|
Techniques are disclosed for forming a non-planar germanium quantum well structure. In particular, the quantum well structure can be implemented with group iv or iii-v semiconductor materials and includes a germanium fin structure.
|Compositions for the in vitro derivation and culture of embryonic stem (es) cell lines with germline transmission capability and for the culture of adult stem cells|
The present invention is directed to a method of deriving pluripotent embryonic stem cells from mouse blastocysts or from primordial germ cells from a post-implantation mouse embryo, or of maintaining or growing pluripotent embryonic stem cells from a mouse, or of expanding human hematopoietic stem cells or human hematopoietic precursor cells. The methods include the step of cultivating the stem cells or precursor cells for at least one passage in a culture medium preconditioned by the rabbit fibroblast cell line rab9 (atcc catalogue crl1414) and containing less than 0.1 ng/ml leukemia inhibitory factor (lif)..
|Method for producing stabilized whole wheat flour|
A stabilized flour, such as stabilized whole grain wheat flour, exhibiting unexpectedly superior extended shelf life and superior biscuit baking functionality, may be produced with or without heating to inhibit lipase by subjecting whole grains or a bran and germ fraction or component to treatment with a lipase inhibitor, such as an acid or green tea extract. Treatment with the lipase inhibitor may be performed during tempering of the whole grains or berries or during hydration of the bran and germ fraction or component..
|Antimicrobial haloalkyl heterocycle compounds|
This application describes compounds useful as anti-microbial agents, including as antibacterial, disinfectant, antifungal, germicidal or antiviral agents.. .
|High-temperature resistant carbon monofluoride batteries having lithiated anode|
Disclosed are carbon monofluoride cathode batteries suitable for use at highly elevated temperatures. Rather than using a pure lithium anode, the anode has a base material selected from the group consisting of silicon, germanium and tin, where the base material is lithiated.
|Integrated circuit transistor structure with high germanium concentration sige stressor|
An integrated circuit transistor structure includes a semiconductor substrate, a first sige layer in at least one of a source area or a drain area on the semiconductor substrate, and a channel between the source area and the drain area. The first sige layer has a ge concentration of 50 percent or more..
|Non-planar semiconductor device having germanium-based active region with release etch-passivation surface|
Non-planar semiconductor devices having germanium-based active regions with release etch-passivation surfaces are described. For example, a semiconductor device includes a vertical arrangement of a plurality of germanium-rich nanowires disposed above a substrate.
|Promotion of plant growth using collagen based gelatin|
Compositions and related methods for promoting plant growth using irreversibly denatured collagen-based gelatin are described. In one embodiment, a covered plant propagation source comprises a plant propagation source covered by a covering material, the covering material comprising irreversibly denatured collagen-based gelatin.
|Semiconductor devices with silicon-germanium channels including hydrogen|
A semiconductor device is fabricated by providing a substrate including a silicon channel layer and a silicon-germanium channel layer, forming gate structures disposed on the silicon channel layer and on the silicon-germanium channel layer, forming a first protection layer to cover the resultant structure including the gate structures, and injecting hydrogen and/or its isotopes into the silicon-germanium channel layer. The silicon and silicon-germanium channel layers may be oriented along a <100> direction.
|Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates|
Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate.
|Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer|
Semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers are described. For example, a semiconductor device includes a first buffer layer disposed above a substrate.
|Pi-electron conjugated block copolymer and photoelectric conversion element|
Provided is a conjugated block copolymer that is capable of morphology control and that can achieve superior conversion efficiency. A π-electron conjugated block copolymer contiguously or non-contiguously bonding polymer block (a) involving a monomer unit having in a portion of a chemical structure at least one heteroaryl skeleton selected from a thiophene, a fluorine, a carbazole, a dibenzosilole and a dibenzogermole; and a polymer block (b) involving a monomer unit similarly having at least one heteroaryl skeleton; wherein the polymer block (a) comprises a homopolymer block of a monomer unit having a substituent rna that is an alkoxy group or an alkyl group having 1-18 carbon atoms, and the polymer block (b) comprises a copolymer block of at least two different each other types of monomer units having substituent rnb selected from an alkoxy group or an alkyl group having 1-18 carbon atoms, which may be substituted with an alkoxy group, a halogen atom, a hydroxyl group, an amino group, a thiole group, a silyl group, an ester group, an aryl group, hetero aryl group..
|Reflector for ultraviolet sterilizer fixture|
An ultraviolet (uv) germicidal or sterilization fixture having a dual parabolic reflecting assembly for collimating and redirecting uv light. The first pair of parabolic reflectors are positioned to collimate and reflect light emanating from the sides of the uv light source and spaced apart proximately to the rear surface of the uv source to allow light to pass through.
|Matrix assisted laser desorption ionisation mass spectrometry imaging (maldi-msi)|
A method of preparing a sample for matrix assisted laser desorption ionisation mass spectrometry imaging analysis by a two-step process. Firstly, a maldi matrix is dusted on to the sample followed by a spray of a suitable solvent onto the dusted sample.
|Method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors integrated in a cmos soi wafer|
A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (hpts) integrated in a cmos soi wafer are disclosed and may include receiving optical signals via a top surface of a photonically-enabled cmos chip; and generating electrical signals in the chip utilizing one or more hpts that detect optical signals. The hpts may comprise a base and a split collector, with the split collector comprising a silicon-on-insulator (soi) layer and a germanium layer.
|Apparatus for generating fine bubbles having a positive charge and water treatment apparatus using same|
Provided is a water treatment apparatus using an apparatus for generating fine bubbles having a positive charge. The water treatment apparatus comprises: an apparatus for generating fine bubbles having a positive charge; a treatment bath into which the fine bubbles generated in the apparatus for generating fine bubbles are supplied and in which raw water is stored; and an ultrasonic oscillator for generating ultrasonic waves having a predetermined intensity when power is applied to explode the fine bubbles floating up to a water level after the fine bubbles are supplied into said treatment bath.
|Soybean seed and oil compositions and methods of making same|
Methods for obtaining soybean plants that produce seed with low linolenic acid levels and moderately increased oleic levels are disclosed. Also disclosed are methods for producing seed with low linolenic acid levels, moderately increased oleic levels and low saturated fatty acid levels.
|Non-human animals expressing ph-sensitive immunoglobulin sequences|
Genetically modified non-human animals are provided that express an immunoglobulin variable domain that comprises at least one histidine, wherein the at least one histidine is encoded by a substitution of a non-histidine codon in the germline of the animal with a hisidine codon, or the insertion of a histidine codon in a germline immunoglobulin nucleic acid sequence. Immunoglobulin genes comprising histidines in one or more cdrs, in an n-terminal region, and or in a loop 4 region are also provided.
|Process for making linear long chain alkanes using renewable feedstocks|
A hydrodeoxygenation process for producing a linear alkane from a feedstock comprising a saturated or unsaturated c10-18 oxygenate that comprises an ester group, carboxylic acid group, carbonyl group and/or alcohol group is disclosed. The process comprises contacting the feedstock with a catalyst comprising (i) about 0.1% to 10% by weight of a metal selected from group ib or viii of the periodic table, and (ii) about 0.5% to 15% by weight of tungsten, rhenium, molybdenum, vanadium, manganese, zinc, chromium, germanium, tin, titanium, gold, and/or zirconium, at a temperature between about 150° c.
|Fabricating photonics devices fully integrated into a cmos manufacturing process|
Disclosed are process enhancements to fully integrate the processing of a photonics device into a cmos manufacturing process flow. A cmos wafer may be divided into different portions.
|Systems and methods for diagnosing a predisposition to develop colon cancer|
Systems and methods for diagnosing or characterizing a predisposition to colon cancer are provided. Cell nuclei may be evaluated for the presence or quantity of gamma-h2ax foci.
|Embedded multifunctional air purifier used in kitchen|
An embedded multifunctional air purifier used in a kitchen is installed in a predetermined space of a cupboard and includes a casing, a front filter, an electrostatic dust collector, an air extraction module, a photocatalyst module and a vitamin c filter. An air inlet and an air outlet are formed on a front side of the casing; an air channel is formed in the casing; the front filter is installed at the air inlet; the electrostatic dust collector id installed at a front section of the air channel; the air extraction module and the photocatalyst module are installed at a rear section of the air channel; and the vitamin c filter is installed at the air outlet, so as to eliminate fume odor and germs in the kitchen and provides the function of producing vitamin c..
|Delta doping at si-ge interface|
A iv or iii-v device is fabricated on a germanium template on a silicon substrate and includes a thin layer of ge epitaxially grown on a silicon substrate. The thin layer includes ge delta doped with sn at the silicon substrate.
|Iv material photonic device on dbr|
A photonic structure including a substrate of either crystalline silicon or germanium and a multilayer distributed bragg reflector (dbr) positioned on the substrate. The dbr includes material substantially crystal lattice matching the dbr to the substrate.
|Plants with altered phytochromes|
Polynucleotides encoding polypeptides that increase the light sensitivity of plants were identified. Introduction of the polynucleotides into plants produces plants having altered characteristics, such as decreased height, decreased diameter, decreased petiole length, decreased internode length, decreased hypocotyl length, increased hyponasty or enhanced germination..
|Germanium-containing camptothecin analogues|
The present invention discloses: (i) the novel germanium-containing camptothecin compound, 7[2′-trimethylgermanyl]ethyl-20(s) camptothecin, and pharmaceutically-acceptable salts thereof; (ii) methods of synthesis of said novel germanium-containing camptothecin compound, 7[2′-trimethylgermanyl]ethyl-20(s) camptothecin, and pharmaceutically-acceptable salts; (iii) pharmaceutically-acceptable formulations comprising said novel germanium-containing camptothecin compound, 7[2′-trimethylgermanyl]ethyl-20(s) camptothecin, and pharmaceutically-acceptable salts thereof; and (iv) methods of administration of said novel germanium-containing camptothecin compound, 7[2′-trimethylgermanyl]ethyl-20(s) camptothecin, and pharmaceutically-acceptable salts thereof to subjects in need thereof, including subjects with cancer.. .
|Methods of forming phase change materials and methods of forming phase change memory circuitry|
A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium.
|Integrated circuits having boron-doped silicon germanium channels and methods for fabricating the same|
Integrated circuits and methods for fabricating integrated circuits are provided. One method includes recessing a pfet active region to form a recessed pfet surface region.
|Epitaxial growth of smooth and highly strained germanium|
A smooth germanium layer which can be grown directly on a silicon semiconductor substrate by exposing the substrate to germanium precursor in the presence of phosphine at temperature of about 350 c. The germanium layer formation can be achieved with or without a sige seed layer.
|Lamination, conductive material, and method for manufacturing lamination|
A lamination includes: a substrate formed of aluminum or aluminum alloy; an intermediate layer formed of any one metal or nonmetal selected from the group consisting of silver, gold, chromium, iron, germanium, manganese, nickel, silicon, and zinc, or an alloy containing the any one metal, on a surface of the substrate; and a film layer formed by accelerating powder material of copper or copper alloy together with gas heated to a temperature lower than a melting point of the powder material and spraying and depositing a solid-phase powder material onto a surface of the intermediate layer.. .
The swing cradle is designed to allow users to transform conventional belt swings into baby safe swings. This innovative product features a cloth assembly that is secured by straps and snaps around the existing swing.
|Multi-standard socket adaptor|
The present invention provides a multi-standard socket adaptor, comprising at least one socket interface and a housing attached to the socket interface. The internal of the housing comprises a first terminal set and a second terminal set conforming to the 125-volt and 250-volt socket specifications respectively; wherein the socket adaptor further comprises a first socket set and a second socket set corresponding to the first and second terminal sets respectively as well as confirming to the 125-volt and 250-volt socket specifications.
|Methods and apparatus for forming tantalum silicate layers on germanium or iii-v semiconductor devices|
Described are apparatus and methods for forming tantalum silicate layers on germanium or iii-v materials. Such tantalum silicate layers may have si/(ta+si) atomic ratios from about 0.01 to about 0.15.
|Atomic layer deposition of geo2|
Atomic layer deposition processes for forming germanium oxide thin films are provided. In some embodiments the ald processes can include the following: contacting the substrate with a vapor phase tetravalent ge precursor such that at most a molecular monolayer of the ge precursor is formed on the substrate surface; removing excess ge precursor and reaction by products, if any; contacting the substrate with a vapor phase oxygen precursor that reacts with the ge precursor on the substrate surface; removing excess oxygen precursor and any gaseous by-products, and repeating the contacting and removing steps until a germanium oxide thin film of the desired thickness has been formed..
|Method and apparatus for forming gate stack on si, sige or ge channels|
Provided are methods and apparatus for functionalizing a substrate surface used as the channel in a gate stack. Silicon, germanium and silicon germanium substrates surfaces are functionalized with one or more of sulfur and selenium by plasma processing..
|Sprouted cereal, method for manufacturing same, food product containing same, and bdnf production accelerator|
The invention relates to a novel technique for germinating a sproutable food such as rice, other types of cereals, or seeds. Provided is a novel germination technique capable of increasing a content of glutamate, accelerating an enrichment of gamma-aminobutyric acid, and exerting excellent functionality for the body, and a novel functional food material or pharmaceutical agent.
|Use of lactobacillus for liver protection|
A method for liver protection of a mammal is provided and includes administering an effective amount of isolated lactobacillus plantarum cmu995 thereto. Providing a new use of lactobacillus plantarum cmu995, which is deposited at the food industry research and development institute (firdi) in taiwan under accession number bcrc 910472 and in the german collection of microorganisms and cell cultures (dsmz) under accession number dsm 23780..