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Germ patents



      
           
This page is updated frequently with new Germ-related patent applications. Subscribe to the Germ RSS feed to automatically get the update: related Germ RSS feeds. RSS updates for this page: Germ RSS RSS


Ge-si p-i-n photodiode with reduced dark current and fabrication method thereof

Sifotonics Technologies

Ge-si p-i-n photodiode with reduced dark current and fabrication method thereof

Finfet structures having silicon germanium and silicon channels

International Business Machines

Finfet structures having silicon germanium and silicon channels

Finfet structures having silicon germanium and silicon channels

Grain crushing apparatuses and processes

Date/App# patent app List of recent Germ-related patents
01/29/15
20150033406
 Genetic markers associated with drought tolerance in maize patent thumbnailnew patent Genetic markers associated with drought tolerance in maize
The presently disclosed subject matter relates to methods and compositions for identifying, selecting, and/or producing drought tolerant maize plants or germplasm. Maize plants or germplasm that have been identified, selected, and/or produced by any of the methods of the presently disclosed subject matter are also provided..
Syngenta Participations Ag
01/29/15
20150033305
 Methods and systems for secure and reliable identity-based computing patent thumbnailnew patent Methods and systems for secure and reliable identity-based computing
The embodiments herein provide a secure computing resource set identification, evaluation, and management arrangement, employing in various embodiments some or all of the following highly reliable identity related means to establish, register, publish and securely employ user computing arrangement resources in satisfaction of user set target contextual purposes. Systems and methods may include, as applicable, software and hardware implementations for identity firewalls; awareness managers; contextual purpose firewall frameworks for situationally germane resource usage related security, provisioning, isolation, constraining, and operational management; liveness biometric, and assiduous environmental, evaluation and authentication techniques; repute systems and methods assertion and fact ecosphere; standardized and interoperable contextual purpose related expression systems and methods; purpose related computing arrangement resource and related information management systems and methods, including situational contextual identity management systems and methods; and/or the like..
Advanced Elemental Technologies, Inc.
01/29/15
20150031188
 Method for isolating active regions in germanium-based mos device patent thumbnailnew patent Method for isolating active regions in germanium-based mos device
Disclosed herein is a method for isolating active regions in a germanium-based mos device. A surface of a germanium-based substrate is covered by a thin polysilicon layer or a poly-sige layer, and an isolation structure of germanium dioxide covered by a silicon dioxide layer or a sige oxide layer on top is formed by means of two steps of oxidation in a case of the active regions are protected.
Peking University
01/29/15
20150031183
 Semiconductor devices including silicide regions and methods of fabricating the same patent thumbnailnew patent Semiconductor devices including silicide regions and methods of fabricating the same
A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or carbon. In the method, a gate electrode is formed on a semiconductor substrate with a gate insulating layer interposed therebetween.
Samsung Electronics Co., Ltd.
01/29/15
20150030739
 Dry processing technique  and device for corn patent thumbnailnew patent Dry processing technique and device for corn
A dry processing technique for corn includes the stages of cleaning, conditioning, debranning, degerming and grits breaking, and germ screening and grits extracting. The debranning stage includes first stirred debranning, dampening and second stirred debranning in sequence.
01/29/15
20150028454
 Finfet structures having silicon germanium and silicon channels patent thumbnailnew patent Finfet structures having silicon germanium and silicon channels
Silicon and silicon germanium fins are formed on a semiconductor wafer or other substrate in a manner that facilitates production of closely spaced nfet and pfet devices. A patterned mandrel layer is employed for forming one or more recesses in the wafer prior to the epitaxial growth of a silicon germanium layer that fills the recess.
International Business Machines Corporation
01/29/15
20150028443
 A ge-si avalanche photodiode with silicon buffer layer and edge electric field buffer region patent thumbnailnew patent A ge-si avalanche photodiode with silicon buffer layer and edge electric field buffer region
Various embodiments of a germanium-on-silicon (ge—si) avalanche photodiode are provided. In one aspect, the ge—si avalanche photodiode utilizes a silicon buffer layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode.
Sifotonics Technologies Co., Ltd.
01/29/15
20150028426
 Buried sige oxide finfet scheme for device enhancement patent thumbnailnew patent Buried sige oxide finfet scheme for device enhancement
The present disclosure relates to a fin field effect transistor (finfet) device having a buried silicon germanium oxide structure configured to enhance performance of the finfet device. In some embodiments, the finfet device has a three-dimensional fin of semiconductor material protruding from a substrate at a position located between first and second isolation regions.
Taiwan Semiconductor Manufacturing Co., Ltd.
01/29/15
20150028386
 Ge-si p-i-n photodiode with reduced dark current and fabrication method thereof patent thumbnailnew patent Ge-si p-i-n photodiode with reduced dark current and fabrication method thereof
Various embodiments of a germanium-on-silicon (ge—si) photodiode are provided along with the fabrication method thereof. In one aspect, a ge—si photodiode includes a doped bottom region at the bottom of a germanium layer, formed by thermal diffusion of donors implanted into a silicon layer.
Sifotonics Technologies Co., Ltd.
01/29/15
20150028348
 Forming embedded source and drain regions to prevent bottom leakage in a dielectrically isolated fin field effect transistor (finfet) device patent thumbnailnew patent Forming embedded source and drain regions to prevent bottom leakage in a dielectrically isolated fin field effect transistor (finfet) device
Approaches for isolating source and drain regions in an integrated circuit (ic) device (e.g., a fin field effect transistor (finfet)) are provided. Specifically, the finfet device comprises a gate structure formed over a finned substrate; an isolation oxide beneath an active fin channel of the gate structure; an embedded source and a drain (s/d) formed adjacent the gate structure and the isolation oxide; and an epitaxial (epi) bottom region of the embedded s/d, the epi bottom region counter doped to a polarity of the embedded s/d.
Globalfoundries Inc.
01/29/15
20150028286
new patent

Method for growing germanium/silicon-germanium superlattice


A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (sls) using an ultra-high vacuum-chemical vapor deposition (uhv-cvd) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth.
Bae Systems Information & Electronic Systems Integration Inc.
01/29/15
20150028268
new patent

Method for manufacturing highly pure silicon, highly pure silicon obtained by this method, and silicon raw material for manufacturing highly pure silicon


Provided are a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon..
Silicio Ferrosolar S.l.
01/29/15
20150028139
new patent

Grain crushing apparatuses and processes


Disclosed are grain crushing apparatuses and processes for processing grain. In one embodiment, a grain crushing apparatus includes a first and second sidewall spaced apart from one another a throat dimension in a first direction, and a first and second support shaft positioned transverse to the first and sidewall.
01/22/15
20150026839

Maize plants with improved disease resistance


The present invention is in the field of plant breeding and disease resistance. More specifically, the invention includes a method for breeding corn plants containing one or more markers that are associated with resistance to fungi.
Monsanto Technology Llc
01/22/15
20150026108

Managing computer server capacity


Systems and methods are disclosed for using machine learning (e.g., neural networks and/or combinatorial learning) to solve the non-linear problem of predicting the provisioning of a server farm (e.g., cloud resources). The machine learning may be performed using commercially available products, such as the snns product from the university of stuttgard of germany.
Citrix Systems, Inc.
01/22/15
20150024579

Method of improving ion beam quality in an implant system


The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane..
01/22/15
20150024281

Method for manufacturing sulfide-based solid electrolyte


Provided is a method for manufacturing a sulfide-based solid electrolyte including preparing a precursor comprising lithium sulfide, germanium sulfide, aluminum sulfide, phosphorus sulfide, and sulfur, conducting a mixing process of the precursor to prepare a mixture, and crystallizing the mixture to form a compound represented by li9.7al0.3ge0.7p2s12. The sulfide-based solid electrolyte may have high ionic conductivity..
Electronics And Telecommunications Research Institute
01/22/15
20150024096

Method and means for extending the shelf life of food products


A method and means is provided for extending the shelf life of a food product by successively subjecting the food product to uv germicidal irradiation and an ozone/water or ozone/air treatment. The uv unit and the ozone unit may be reversed so that the food product is first treated with the ozone and then subjected to the uv germicidal irradiation treatment..
01/22/15
20150023644

Isotopically altered optical fiber


An optical waveguide having a cladding layer formed of high-purity glass, or a cladding layer formed of high-purity isotope-proportion modified glass, and with a core of high-purity isotope-proportion-modified glass with the index of refraction of the core glass greater than the index of refraction of the cladding glass, said high-purity isotope-proportion-modified core material having a si-29-isotope proportion at most 4.447% si-29 (atom/atom) of all silicon atoms in said core, or at least 4.90% of si-29 (atom/atom) atoms in said core, or having a ge-73 isotope proportion of at most 7.2% ge-73 (atom/atom) of all germanium atoms in said core, or at least 8.18% of ge-73 (atom/atom) of germanium atoms in said core region.. .
01/22/15
20150021703

Gate oxide quality for complex mosfet devices


In various aspects, methods of forming a semiconductor device and semiconductor devices are provided. In some illustrative embodiments herein, a silicon/germanium layer is provided on a semiconductor substrate.
Globalfoundries Inc.
01/22/15
20150021697

Thermally tuning strain in semiconductor devices


A method includes performing a first epitaxy to grow a silicon germanium layer over a semiconductor substrate, performing a second epitaxy to grow a silicon layer over the silicon germanium layer, and performing a first oxidation to oxidize the silicon germanium layer, wherein first silicon germanium oxide regions are generated. A strain releasing operation is performed to release a strain caused by the first silicon germanium oxide regions.
Taiwan Semiconductor Manufacturing Company, Ltd.
01/22/15
20150021696

Mos devices having epitaxy regions with reduced facets


An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage.
Taiwan Semiconductor Manufacturing Company, Ltd.
01/22/15
20150021692

Method of localized modification of the stresses in a substrate of the soi type, in particular fd soi type, and corresponding device


A substrate of the silicon on insulator type includes a semi-conducting film disposed on a buried insulating layer which is disposed on an unstressed silicon support substrate. The semi-conducting film includes a first film zone of tensile-stressed silicon and a second film zone of tensile-relaxed silicon.
Stmicroelectronics (crolles 2) Sas
01/22/15
20150021688

Mos devices with non-uniform p-type impurity profile


An integrated circuit structure include a semiconductor substrate, a gate stack over the semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A silicon germanium region is disposed in the opening, wherein the silicon germanium region has a first p-type impurity concentration.
Taiwan Semiconductor Manufacturing Company, Ltd.
01/22/15
20150020729

Germanium enriched silicon material for making solar cells


Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials.
Silicor Materials Inc.
01/22/15
20150020698

Method and means for extending the shelf life of food products


A method and means is provided for extending the shelf life of a food product by successively subjecting the food product to uv germicidal irradiation and an ozone/water or ozone/air treatment. The uv unit and the ozone unit may be reversed so that the food product is first treated with the ozone and then subjected to the uv germicidal irradiation treatment..
01/15/15
20150020240

Genetic markers associated with drought tolerance in maize


The presently disclosed subject matter relates to methods and compositions for identifying, selecting, and/or producing drought tolerant maize plants or germplasm. Maize plants or germplasm that have been identified, selected, and/or produced by any of the methods of the presently disclosed subject matter are also provided..
Syngenta Participations Ag
01/15/15
20150018590

Catalyst for conversion of hydrocarbons, process of making and process of using thereof - ge zeolite


In an embodiment a catalyst comprises a medium or large pore zeolite having germanium incorporated into the zeolite framework. The zeolite can have a pore structure that is one dimensional, two dimensional or three dimensional.
Saudi Basic Industries Corporation
01/15/15
20150017800

Interconnect structure for semiconductor devices


A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a conductive material is embedded within a dielectric layer, the conductive material comprising a first material and having either a recess, a convex surface, or is planar.
Taiwan Semiconductor Manufacturing Company, Ltd.
01/15/15
20150017788

Method for making silicon-germanium absorbers for thermal sensors


A system and method for growing polycrystalline silicon-germanium film that includes mixing a geh4 gas and a sih4 gas to coat and grow polycrystalline silicon-germanium film on a silicon wafer. The geh4 gas and the sih4 gas are also heated and the pressure around the wafer is reduced to at least 2.5*10−3 mbar to produce the polycrystalline silicon-germanium film.
Bae Systems Information And Electronic Systems Integration Inc.
01/15/15
20150017433

Composite plasmonic nanostructure for enhanced extinction of electromagnetic waves


The present disclosure explores and fabricates coupled plasmonic nanoparticles of gold (au), silver (ag), or aluminum (al) onto nanorods or nanowires of zinc telluride (znte), silicon (si), germanium (ge), or other semiconductor materials. Full-wave simulation is performed to obtain an optimum design for maximum light absorption.
The University Of North Carolina At Charlotte
01/15/15
20150016888

System and irrigation


A method for subsurface irrigation having the steps of; providing one or more hydrophobic porous uncoated tubes having a hydro head (hh), locating the tubes with at least a portion of their length within the rhizosphere of plants to be irrigated, and passing an aqueous irrigation liquid into the tubes during the growth phase of the plants to be irrigated at an applied pressure at or below hh. The tubes may be located in the proximity of seeds which become the plants to be irrigated following their germination.
E I Du Pont De Nemours And Company
01/15/15
20150016809

Warming bag for neonate nutritional liquid


A sterilized system component is disclosed for holding a container of neonate nutritional liquid during a warming of the nutritional liquid. Structurally, the system component includes a pouch-shaped receptacle having a water-filled enclosure.
Angele Innovations, Llc
01/15/15
20150016792

Highly nonlinear optical fiber with imporved sbs threshold and moderate attenuation


A highly nonlinear optical fiber having an improved stimulated brillouin scattering threshold is provided. The fiber includes a central core region made substantially from silica doped with aluminum, a trench region surrounding the central core region, and a silica cladding surrounding the trench region.
Ofs Fitel, Llc
01/15/15
20150016769

Semiconductor devices including photodetectors integrated on waveguides and methods for fabricating the same


Semiconductor devices and methods for fabricating semiconductor devices are provided. In one example, a method for fabricating a semiconductor device includes etching a waveguide layer in a detector region of a semiconductor substrate to form a recessed waveguide layer section.
Globalfoundries Singapore Pte. Ltd.
01/15/15
20150014771

Dual l-shaped drift regions in an ldmos device and making the same


A semiconductor device comprising dual l-shaped drift regions in a lateral diffused metal oxide semiconductor (ldmos) and a method of making the same. The ldmos in the semiconductor device comprises a trench isolation region or a deep trench encapsulated by a liner, a first l-shaped drift region, and a second l-shaped drift region.
International Business Machines Corporation
01/15/15
20150013717

Disposable absorbent liquid impermeable coverings


A single use, disposable system for cleaning that protects the individual's hands that avoids direct skin and hand contact with the material being cleaned, reducing the likelihood of transmission of pathogens, germs, dirt, odiferous material, noxious material, and allowing the individual to then progress forward without having to wash, cleanse or dry their hands, has been developed. The system includes an absorbent material such as a paper towel, baby wipe, surface cleaning wipe, or medical wipe, adhered on at least one surface to a flexible liquid or waste impermeable covering such as a glove, mitt, or baggie..
Freesetec
01/08/15
20150011523

Complexes of germanium with amino acids and carboxylic acids and preparing same


The invention relates to complexes of germanium with amino acids and carboxylic acids of the general formula ge[oh]a[aa]b[ca]c (i), where aa is an amino acid, ca is a carboxylic acid, a=0-3, b=1-3, c=0-3, and 1<b+c≦4, wherein aa and ac in the complex can be identical or different, and to a method for preparing same. The method preparing an aqueous suspension of germanium dioxide, adding an amino acid and a carboxylic acid to the aqueous suspension of germanium oxide produced, heating the mixture produced with agitation at a temperature of 40-100° c.
Obschestvo S Ogranichennoi Otvetstvennostyu "wds Farma"
01/08/15
20150011060

Dual epi cmos integration for planar substrates


Silicon germanium regions are formed adjacent gates electrodes over both n-type and p-type regions in an integrated circuit. A hard mask patterned by lithography then protects structures over the p-type region while the silicon germanium is selectively removed from over the n-type region, even under remnants of the hard mask on sidewall spacers on the gate electrode.
International Business Machines Corporation


Popular terms: [SEARCH]

Germ topics: Semiconductor, Transistors, Semiconductor Material, Ion Source, Optical Fiber, Photodiode, Electrical Signal, Level Shift, Source Follower, Transimpedance Amplifier, Movable Barrier, Prophylactic, Immunoglobulin, Immunoglobulins, Evaporator

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