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 Formation of finfet junction patent thumbnailnew patent Formation of finfet junction
A finfet structure, and method of forming such structure, in which a germanium enriched nanowire is located in the channel region of the fet, while simultaneously having silicon-germanium fin in the source/drain region of the finfet.. .
International Business Machines Corporation


 Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treated patent thumbnailnew patent Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treated
A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×1016 cm−3 or greater in a reducing gas atmosphere at 700° c. Or greater.
Japan Science And Technology Agency


 Nanowire and  fabricating the same patent thumbnailnew patent Nanowire and fabricating the same
A method of forming a nanowire includes providing a substrate. The substrate is etched to form at least one fin.
United Microelectronics Corp.


 Non-destructive, wafer scale method to evaluate defect density in heterogeneous epitaxial layers patent thumbnailnew patent Non-destructive, wafer scale method to evaluate defect density in heterogeneous epitaxial layers
A semiconductor material stack of, from bottom to top, a first semiconductor material having a first lattice constant and a second semiconductor material having a second lattice constant that may or may not differ from the first lattice constant and is selected from an iii-v compound semiconductor and germanium is provided. The second semiconductor material of the semiconductor material stack is then scanned using an atomic force microscope (afm) operating in a tapping mode to provide an afm image of the second semiconductor material of the semiconductor material stack.
International Business Machines Corporation


 Stem canker tolerant soybeans and methods of use patent thumbnailnew patent Stem canker tolerant soybeans and methods of use
Soybean plants, germplasm and seed comprising at least one native locus conferring improved stem canker tolerance, molecular markers useful for identifying and, optionally, selecting soybean plants displaying tolerance, improved tolerance, or susceptibility to stem canker, and methods of their use are provided. Also provided are isolated polynucleotides, probes, kits, systems, and the like, useful for carrying out the methods described herein..
Pioneer Hi-bred International, Inc.


 Polycyclohexylenedimethylene terephthalate resin composition patent thumbnailnew patent Polycyclohexylenedimethylene terephthalate resin composition
The present invention relates to a polycyclohexylenedimethylene terephthalate resin composition having improved reflectivity, heat resistance, and yellowing resistance. The resin composition according to one embodiment of the present invention includes 40 to 95 wt % of polycyclohexylenedimethylene terephthalate resin; 1 to 50 wt % of a white pigment; and 1 to 50 wt % of a filler, and the amount of germanium (ge) atoms remaining in the resin is 30 to 1,000 ppm based on the weight of the resin..
Sk Chemicals Co., Ltd.


 Method of inducing the production of protective anti-hiv-1 antibodies patent thumbnailnew patent Method of inducing the production of protective anti-hiv-1 antibodies
The present invention relates, in general, to an immunogen for hiv vaccination and, in particular, to a method of inducing the production of protective anti-hiv antibodies by targeting b cell germline and clone intermediates using a combination of hiv envelope and non-hiv immunogens. The invention also relates to compositions suitable for use in such a method..
Duke University


 Structure for integration of an iii-v compound semiconductor on soi patent thumbnailStructure for integration of an iii-v compound semiconductor on soi
A semiconductor-on-insulator (soi) substrate is provided that includes a silicon or germanium handle substrate that is miscut from 2 degrees to 8 degrees towards the <111> crystallographic direction or the <100> crystallographic direction. The topmost semiconductor layer is removed from a portion of the soi substrate, and then a trench having a high aspect ratio is formed within the insulator layer of the soi substrate and along the <111> crystallographic direction or the <100> crystallographic direction.
International Business Machines Corporation


 Gene associated with non-biological stress resistance, and transformed plant patent thumbnailGene associated with non-biological stress resistance, and transformed plant
The present invention relates to a composition for enhancing non-biological stress resistance in plants and a composition for accelerating germination. A nucleotide sequence of the present invention is involved in the resistance against the drying stresses in plants, and a transformed plant in which the nucleotide sequence is overexpressed has prominent resistance against various kinds of non-biological stress, including drought stress.
Industry-academic Cooperation Foundation, Yonsei University


 Surface disinfectant with residual biocidal property patent thumbnailSurface disinfectant with residual biocidal property
A biofilm sealant is provided imparting a residual biocidal property. The biofilm sealant is used to treat a surface to impart a film having a capacity to quickly kill bacteria and other germs for at least 24 hours after deposit of the film on a treated surface.
W.m. Barr & Company, Inc.


A protective packaging delivery and growing system for seeds


Protective seed case (a) comprising two casing sections (1, 3) interposed with a water soluble and/or hydrolytically degradable layer (2), said case (a) being biodegradable, hygroscopic and water soluble, and encasing seed articles (4) that are self-contained. The seed case (a) packages and protects the seeds (4) prior to planting, the seed case (a) is inserted at the normal to the surface of the growing medium (5) and once in contact with water moisture it provides an ideal moist environment for germination, the moisture then opens the seed case (a) up for root and shoot growth.
Green Digit Limited


Etsoi with reduced extension resistance


A semiconductor is formed on an soi substrate, such as an extremely thin soi (etsoi) substrate, with increased extension thickness. Embodiments include semiconductor devices having an epitaxially formed silicon-containing layer, such as embedded silicon germanium (esige), on the soi substrate.
Globalfoundries Inc.


Reduced variation mosfet using a drain-extension-last process


A mosfet structure and method of manufacture that minimize threshold variations associated with statistical uncertainties of implanted source and drain extensions. The source and drain extensions are fabricated very late in the process using a material added to etched recesses immediately adjacent to the transistor's channel.
Semi Solutions Llc


Germanium-on-insulator substrate and forming the same


Provided is a germanium-on-insulator substrate. The germanium-on-insulator substrate includes a bulk silicon substrate, an oxide film which is disposed on the bulk silicon substrate and has a first region exposing a portion of the bulk silicon substrate, a silicon layer which covers a portion of the top surface of the oxide film and does not cover the first region, a germanium layer which contacts the bulk silicon substrate exposed through the first region and is disposed on the oxide film, and an insulating layer which covers the oxide film and the silicon layer and exposes the top surface of the germanium layer..
Electronics And Telecommunications Research Institute


Method for fabricating image sensor device


An image sensor device includes a silicon-based substrate, a silicon-germanium epitaxy layer, an isolation feature, an active pixel cell and a logic circuit. The silicon-germanium epitaxy layer is on the silicon-based substrate, in which the silicon-germanium epitaxy layer has a composition of si1-xgex, where 0<x<1.
Taiwan Semiconductor Manufacturing Co., Ltd.


Valve apparatus; arrangement with valve operating an arrangement


The invention relates to a valve apparatus having a housing (100), which housing has a first port (102), which can be connected to a tank (200), and a second port (106), having a closing element (110) which is provided in the housing and which can be placed into an open position, in which a fluid connection is produced between the first port and second port, and which can be placed into a closed position, in which the first and second ports are separated from one another in fluid-tight fashion, having a first (120) and a second (130) seal arrangement between closing element and housing, wherein the first and the second seal arrangement (120, 130) are spaced apart from one another and wherein each seal arrangement interacts with a corresponding seat (126, 136). To create a valve device for the aseptic transport of filling material, it is proposed that a chamber (140) be provided which, in the closed position, is delimited by the seal arrangements, the closing element and the housing, and that a reservoir (142) is provided which can be connected to the chamber and which serves to accommodate a bactericidal fluid, and that the chamber (140) and the reservoir (142) are adapted to form a germ barrier that is created in the closed position with the bactericidal fluid.

Disinfection compositions and methods


Provided herein are disinfection compositions, devices, systems and methods useful for decontamination and/or disinfection of water and other liquid solutions. The disclosed composite materials can comprise a germicidal surface comprising a support substrate, one or more micrometric aggregates of titanium oxide on the support substrate, the titanium oxide aggregates comprising chloride atoms, and one or more micrometric aggregates of silver attached to the chloride atoms of the titanium oxide aggregates, wherein the micrometric aggregates of titanium oxide with silver atoms have a germicidal activity.
Claire, Llc


Seed growing device, method, and system


A seed growing device, method, and system are described. The seed growing device may comprise a solid-shape and a seed-enclosure located within the solid-shape.
Bloombabies Inc.


Integrated circuits with fets having nanowires and methods of manufacturing the same


Integrated circuits and methods for producing the same are provided. A method for producing an integrated circuit includes forming a stack overlying a substrate.
Globalfoundries, Inc.


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Modulating germanium percentage in mos devices


An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage.
Taiwan Semiconductor Manufacturing Company, Ltd.


Mos device having source and drain regions with embedded germanium-containing diffusion barrier


An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is in the opening, wherein the first silicon germanium region has a first germanium percentage.
Taiwan Semiconductor Manufacturing Company, Ltd.


Method of formation of germanium nanowires on bulk substrates


A material stack comprising alternating layers of a silicon etch stop material and a germanium nanowire template material is formed on a surface of a bulk substrate. The material stack and a portion of the bulk substrate are then patterned by etching to provide an intermediate fin structure including a base semiconductor portion and alternating portions of the silicon etch stop material and the germanium nanowire template material.
International Business Machines Corporation


Iii-v finfet cmos with iii-v and germanium-containing channel closely spaced


Closely spaced iii-v compound semiconductor fins and germanium-containing semiconductor fins are provided by utilizing mandrel structures for iii-v compound semiconductor material epitaxial growth and subsequent fin formation. Mandrel structures are formed on a semiconductor material stack that includes an uppermost layer of a relaxed germanium-containing material layer.
International Business Machines Corporation


Methods for fabricating semiconductor structure with condensed silicon germanium layer


Methods of forming condensed first layer and semiconductor structures formed from the methods are provided. The methods include, for instance providing at least one layer disposed over a substrate structure of a semiconductor structure, wherein the substrate structure includes an upper silicon region; and performing at least one oxidation process of the semiconductor structure, the at least one oxidation process reducing a thickness of the upper region, wherein the performing facilitates diffusing to form a condensed layer over the substrate structure..
Globalfoundries Inc.


Semiconductor substrate treatment liquid, treatment method, and manufacturing semiconductor-substrate product using these


Provided is a semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a ge-containing layer that includes germanium (ge) or cleans the surface thereof, and the treatment liquid includes a liquid chemical component which adjusts the ph of the treatment liquid to be in a range of 5 to 16 and an anticorrosive component which is used to prevent the ge-containing layer.. .
Fujifilm Corporation


Methods and kits for monitoring the effects of immunomodulators on adaptive immunity


The invention provides for noninvasive assessment of immunocompetence in various situations, for example, when modified by disease or by immunomodulators. The assessment determines the functional activity of germinal centers via measuring levels of immunogolublin isotype class switching.
Millennium Pharmaceuticals, Inc.


Method of making and processing cheese in dome containers


Processes, methods, systems, containers, and apparatus for making and processing pasta filata cheese in dome containers that are packaged in plastic. The novel invention uses a rigid see through plastic dome to safely store the cheese within and can be heat sealed in a bag with a plastic film across the top of the bag and open end of the dome.

Containment curtains as well as systems and apparatuses including same


Curtains are provided which have fastener/s and, in some cases, strut/s arranged along a screen. The strut/s extend to elevation/s below and/or above the fastener/s.
Xenex Disinfection Services Llc.


Method for generation of broadly neutralizing anti-pathogen antibodies


Methods and composition for potentiating germinal centers are disclosed herein. The methods include potentiating germinal centers to enhance antibody production in response to a vaccine, to increase antibody titer in response to a vaccine, and to enhance b cell class switching..
Northeastern University


Containment curtains as well as systems and apparatuses including same


Curtains are provided which have fastener/s and, in some cases, strut/s arranged along a screen. The strut/s extend to elevation/s below and/or above the fastener/s.
Xenex Disinfection Services Llc.


Antimicrobial, antibacterial and spore germination inhibiting activity from an avocado extract enriched in bioactive compounds


The present disclosure relates to extracts from persea sp. (avocado) enriched in bioactive compounds which can be used as antimicrobial, antibacterial or spore germination inhibiting agents, the process for obtaining the extracts, acetogenins and isolated molecules and methods for using the extracts enriched in bioactive compounds for providing antimicrobial, antibacterial or spore germination inhibiting effect..
Avomex, Inc.


Paddle sealer


A paddle sealer used for planting having closing wheels that are drawn by a motive power source such as a tractor and used to close seed trenches to prevent the seed trench from reopening and provide the proper soil conditioning to promote uniform germination and emergence. The paddle sealer with closing wheels includes an adjustable frame structure including a tensioned arm assembly and an attachment mechanism for attaching the paddle sealer to seeding equipment, and a paddle closing wheel assembly carried by the arm assembly..
Yetter Manufacturing Company


Seed tape, seed tape system and greening or planting system


A seed tape has seeds embedded at a spacing distance from one another in a tubular sleeve. There is provided a seed tape, a seed tape system, and a greening or planting system, which can be provided easily, which are environmentally friendly and with which various objects can be greened easily, efficiently and durably.
B + M Textil Gmbh & Co. Kg


Semiconductor devices


A method of manufacturing a semiconductor device includes partially removing an upper portion of an active fin of a substrate loaded in a chamber to form a trench; and forming a source/drain layer in the trench, which includes providing a silicon source gas, a germanium source gas, an etching gas and a carrier gas into the chamber to perform a selective epitaxial growth (seg) process using a top surface of the active fin exposed by the trench as a seed so that a silicon-germanium layer is grown; and purging the chamber by providing the carrier gas into the chamber to etch the silicon-germanium layer.. .
Samsung Electronics Co., Ltd.


Epitaxial silicon germanium fin formation using sacrificial silicon fin templates


A method of forming semiconductor fins includes forming a plurality of sacrificial template fins from a first semiconductor material; epitaxially growing fins of a second semiconductor material on exposed sidewall surfaces of the sacrificial template fins; and removing the plurality of sacrificial template fins.. .
International Business Machines Corporation


Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures


A method of forming a semiconductor device that includes forming an at least partially relaxed semiconductor material, and forming a plurality of fin trenches in the partially relaxed semiconductor material. At least a portion of the plurality of fin trenches is filled with a first strained semiconductor material that is formed using epitaxial deposition.
International Business Machines Corporation


Multiple threshold voltage trigate devices using 3d condensation


A method of forming a multiple threshold voltage p-channel silicon germanium trigate device using (3d) condensation. The method may include forming a first and second fin in a single semiconductor layer, where the first and second fin have similar initial widths; thinning the second fin; performing a (3d) condensation process to condense the germanium within the first and second fin; and thinning the first fin to a similar width as the second fin..
International Business Machines Corporation


Epitaxial silicon germanium fin formation using sacrificial silicon fin templates


A method of forming semiconductor fins includes forming a plurality of sacrificial template fins from a first semiconductor material; epitaxially growing fins of a second semiconductor material on exposed sidewall surfaces of the sacrificial template fins; and removing the plurality of sacrificial template fins.. .
International Business Machines Corporation


Culture medium containing a spore germination inhibiting or delaying compound


A medium for the culture and detection of target microorganisms, having at least one natural or synthetic specific substrate configured to detect at least one enzyme activity or metabolic activity of the target microorganisms and at least one compound that inhibits or delays the germination of spores of microorganisms, other than the target microorganisms, that are capable of interfering with the culture and detection of the target microorganisms.. .
Biomerieux


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Controlled germination apparatus


Embodiments herein disclosed relate to a computer-controlled germination system built around a rotating vessel within which a germinating process takes place. The system includes automatable controls over air flow, water flow, temperature, and vessel rotation..
Salish Coast Enterprises, Inc.


Device for generating and supplying germanium ionic water


The present invention can supply a pulse to a pure germanium rod made of germanium so as to significantly increase concentration in a short period of time and shorten dissolving time, and relates to a device for generating and supplying germanium ionic water, which can promote the ionization of germanium.. .

Shoe deodorizing degerming dehumidifier and shoe deodorizing degerming dehumidifying method


A shoe deodorizing degerming dehumidifier includes a housing, a main control circuit installed in the housing, a fan and an ozonizer. The housing is detachable from the shoes and is in a shape suitable for putting into and out from the shoe cavity.
Shenzhen Lifen Tech Co., Ltd


Flexible polyurethane foams comprising plant seeds


The invention relates to a flexible polyurethane foam comprising viable and/or germinated plant seeds. The flexible polyurethane foam may comprise a reinforcing fabric composed of fibers, for example synthetic-polymer fibers or rottable natural fibers.
Basf Se


Garden planting template and weed barrier


Embodiments of a system and method for planting vegetables in raised beds are disclosed, the system includes a landscape fabric having clearly visible planting sites on the surface where a gardener can easily tear pre-formed perforated sites to create access holes to the soil. The access holes provide the proper spacing for the selected plant or seed type.
Torrinella Farm, Llc


Semiconductor device having a silicon and germanium material filling a cavity region comprising a notch region formed within a semiconductor substrate


The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a shaped cavity formed from two trench structures, and the shaped cavity is filled with silicon and germanium material.
Shanghai Huali Microelectronics Corporation


Reacted conductive gate electrodes and methods of making the same


A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium.
Taiwan Semiconductor Manufacturing Company, Ltd.


Semiconductor devices with shaped cavities for embedding germanium material and manufacturing processes thereof


The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a shaped cavity that this later to be filled with sige material.
Shanghai Huali Microelectronics Corporation


Vertical cmos structure and method


A method for forming stacked, complementary transistors is disclosed. Selective deposition techniques are used to form a column having a lower portion that includes one type of semiconductor (e.g.
Taiwan Semiconductor Manufacturing Company, Ltd.


Process for molecular layer doping of germanium substrates


A method of molecular layer doping of a germanium substrate comprises the steps of cleaning a surface of the germanium substrate to remove oxides, reacting the cleaned surface with a dopant solution comprising dopant material and a suitable solvent for the dopant at low temperature for a suitable period of time while irradiating the substrate with uv light, and thermal annealing of the germanium substrate.. .
University College Cork, National University Of Ireland, Cork


Method for forming oxide layer by oxidizing semiconductor substrate with hydrogen peroxide


In some embodiments, an oxide layer is grown on a semiconductor substrate by oxidizing the semiconductor substrate by exposure to hydrogen peroxide at a process temperature of about 500° c. Or less.
Asm Ip Holding B.v.


Germanium-bearing ferritic stainless steels


Germanium-bearing ferritic stainless steels are provided. A raw stainless steel-based material may have trace amount of germanium added.
National Tsing Hua University


Methods and compositions for ex vivo generation of developmentally competent eggs from germ line cells using autologous cell systems


The present technology provides for methods for the directed differentiation of multi-potent cells, female germ line stem cells, or oogonial stem cells into oocytes, granulosa cells and/or granulosa precursor cells, i.e.,“synthetic granulosa cells.” the synthetic granulosa cells are useful in methods for growth and maturation of follicles or follicle-like structures and immature oocytes. Additionally, the synthetic granulosa cells are useful in methods of increasing ovarian derived hormones and growth factors in a subject in need thereof..
Northeastern University


Oxidation catalyst for treating a natural gas emission


A catalytic material for treating an exhaust gas produced by a natural gas engine, which catalytic material comprises a molecular sieve and a platinum group metal (pgm) supported on the molecular sieve, wherein the molecular sieve has a framework comprising silicon, oxygen and optionally germanium, and has a content of heteroatom t-atoms is ≦about 0.20 mol %.. .
Johnson Matthey Public Limited Company


Germanium-based glass polyalkenoate cement


Disclosed herein are compositions and methods for making germanium-based glass polyalkenoate cements. Also disclosed are methods for their use as bone cements for bone augmentation procedures..
Dalhousie University


Aeroponic cultivation system


A vertical aeroponic garden utilizes removable growing panels that support plants undisturbed from germination through harvest. The panels are removable, with the supported plants, and can be delivered to a grocery location for harvest by a consumer.
Azoth Solutions, Llc


Deep gate-all-around semiconductor device having germanium or group iii-v active layer


Deep gate-all-around semiconductor devices having germanium or group iii-v active layers are described. For example, a non-planar semiconductor device includes a hetero-structure disposed above a substrate.

Strained channel region transistors employing source and drain stressors and systems including the same


Embodiments of the present invention provide transistor structures having strained channel regions. Strain is created through lattice mismatches in the source and drain regions relative to the channel region of the transistor.
Intel Corporation


Formation of strained fins in a finfet device


In an aspect of the present invention, a field-effect transistor (fet) structure is formed. The fet structure comprises a plurality of fins formed on a semiconductor substrate, wherein the plurality of fins includes a set of fins that include a base portion that is comprised of relaxed silicon-germanium (sige) and an upper portion that is comprised of semiconductor material.
International Business Machines Corporation


Dual isolation on ssoi wafer


A method of forming fins in a dual isolation complimentary-metal-oxide-semiconductor (cmos) device that includes a p-type field effect transistor device (pfet) and an n-type field effect transistor (nfet) device and a cmos device with dual isolation are described. The cmos device includes an n-type field effect transistor (nfet) region, the nfet region including one or more fins comprised of strained silicon, the one or fins in the nfet region being formed on an insulator.
International Business Machines Corporation


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Dual isolation on ssoi wafer


A method of forming fins in a dual isolation complimentary-metal-oxide-semiconductor (cmos) device that includes a p-type field effect transistor device (pfet) and an n-type field effect transistor (nfet) device and a cmos device with dual isolation are described. The cmos device includes an n-type field effect transistor (nfet) region, the nfet region including one or more fins comprised of strained silicon, the one or fins in the nfet region being formed on an insulator.
International Business Machines Corporation


Tungsten for wordline applications


Disclosed herein are methods and related apparatus for formation of tungsten wordlines in memory devices. Also disclosed herein are methods and related apparatus for deposition of fluorine-free tungsten (ffw).
Lam Research Corporation


Method for manufacturing germanium epitaxial layer and manufacturing device using the same


A method for manufacturing a germanium (ge) epitaxial layer is provided. First, a substrate is provided.
United Microelectronics Corp.




Germ topics:
  • Semiconductor
  • Transistors
  • Semiconductor Material
  • Ion Source
  • Optical Fiber
  • Photodiode
  • Electrical Signal
  • Level Shift
  • Source Follower
  • Transimpedance Amplifier
  • Movable Barrier
  • Prophylactic
  • Immunoglobulin
  • Immunoglobulins
  • Evaporator


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    This listing is a sample listing of patent applications related to Germ for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Germ with additional patents listed. Browse our RSS directory or Search for other possible listings.


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