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 Semiconductor device patent thumbnailnew patent Semiconductor device
A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor.
Semiconductor Energy Laboratory Co., Ltd.


 Thin-film transistor and manufacturing method thereof patent thumbnailnew patent Thin-film transistor and manufacturing method thereof
A thin-film transistor and a manufacturing method thereof are characterized in that: the active layer is a group iv-vi compound semiconductor film; the group iv-vi compound is one of geranium sulfide (ges), germanium selenide (gese), germanium telluride (gete), tin selenide (snse), and tin telluride (snte) or a ternary, quaternary, or quinary compound thereof; the active layer is deposited by sputtering; and thermal annealing is performed after the active layer is deposited. The thin-film transistor has high carrier mobility and a high current on/off ratio and therefore meets the needs of high-resolution display development..
National Sun Yat-sen University


 Silicon germanium fin channel formation patent thumbnailnew patent Silicon germanium fin channel formation
A method for channel formation in a fin transistor includes removing a dummy gate and dielectric from a dummy gate structure to expose a region of an underlying fin and depositing an amorphous layer including ge over the region of the underlying fin. The amorphous layer is oxidized to condense out ge and diffuse the ge into the region of the underlying fin to form a channel region with ge in the fin..
Stmicroelectronics, Inc.


 Semiconductor device having a fin patent thumbnailnew patent Semiconductor device having a fin
Provided is a semiconductor device. The semiconductor device includes a fin disposed on a substrate along a first direction.
Samsung Electronics Co., Ltd.


 Silicon-germanium finfet device with controlled junction patent thumbnailnew patent Silicon-germanium finfet device with controlled junction
Embodiments of the invention include a method for <something> and the resulting structure. A semiconductor device including a substrate, a silicon-germanium fin formed on the substrate, a dummy gate formed on the fin, and a first set of spacers formed on the exposed sidewalls of the dummy gate is provided.
International Business Machines Corporation


 Silicon germanium and silicon fins on oxide from bulk wafer patent thumbnailnew patent Silicon germanium and silicon fins on oxide from bulk wafer
A method for forming fins includes growing a sige layer and a silicon layer over a surface of a bulk si substrate, patterning fin structures from the silicon layer and the sige layer and filling between the fin structures with a dielectric fill. Trenches are formed to expose end portions of the fin structures.
Stmicroelectronics, Inc.


 Methods for depositing nickel films and for making nickel silicide and nickel germanide patent thumbnailnew patent Methods for depositing nickel films and for making nickel silicide and nickel germanide
In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate.
Asm International N.v.


 Method of selective epitaxy patent thumbnailnew patent Method of selective epitaxy
Embodiments of the present disclosure generally relate to methods for trench filling of high quality epitaxial silicon-containing material without losing selectivity of growth to dielectrics such as silicon oxides and silicon nitrides. The methods include epitaxially growing a silicon-containing material within a trench formed in a dielectric layer by exposing the trench to a gas mixture comprising a halogenated silicon compound and a halogenated germanium compound.
Applied Materials, Inc.


 Inhibition of hypoxia-inducible factor activity with carica papaya extracts patent thumbnailnew patent Inhibition of hypoxia-inducible factor activity with carica papaya extracts
An extract of carica papaya leaves obtained from a plant of age six months and younger from the date of germination of the seed is used as an inhibitor of hif to effectively block hypoxia-inducible factor (hif) function and methods of use thereof. More specifically it relates to the use of the carica papaya plant extract to eliminate unwanted cells by inhibiting hif in the prevention and treatment of hypoxia-related conditions and diseases such as inflammatory diseases, vascular diseases, cancer and infectious diseases.
Universiti Putra Malaysia


 Germanium-containing active material for anodes for lithium-ion devices patent thumbnailGermanium-containing active material for anodes for lithium-ion devices
Active materials for anodes for lithium ion devices are disclosed. An active may comprise germanium nano-particles having a particle size of 20 to 100 nm, wherein the weight percentage of the germanium is between 72 to 96 weight % of the total weight of the active material; boron carbide nano-particles having a particle size of 20 to 100 nm, wherein the weight percentage of boron in the active material is between 3 to 6 weight % of the total weight of the active material; and tungsten carbide nano-particles having a particle size of 20 to 60 nm, wherein the weight percentage of tungsten in the active material is between 6 to 25 weight % of the total weight of the active material..
Storedot Ltd.


Semiconductor device and manufacturing the same

A germanium optical receiver in which a dark current is small is achieved. The germanium optical receiver is formed of a p-type germanium layer, a non-doped i-type germanium layer, and an n-type germanium layer that are sequentially stacked on an upper surface of a p-type silicon core layer, a first cap layer made of silicon is formed on the side surface of the i-type germanium layer, and a second cap layer made of silicon is formed on the upper surface and side surface of the n-type germanium layer.
Renesas Electronics Corporation

Techniques for integration of ge-rich p-mos source/drain contacts

Techniques are disclosed for improved integration of germanium (ge)-rich p-mos source/drain contacts to, for example, reduce contact resistance. The techniques include depositing the p-type ge-rich layer directly on a silicon (si) surface in the contact trench location, because si surfaces are favorable for deposition of high quality conductive ge-rich materials.
Intel Corporation

Germanium-based quantum well devices

A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel.
Intel Corporation

Method for preparing substrate using germanium condensation process and manufacturing semiconductor device using same

The present invention suggests a substrate manufacturing method and a manufacturing method of a semiconductor device comprising: providing a soi structure having an insulation layer and a silicon layer laminated on a substrate; laminating to form a silicon germanium layer and a capping silicon layer on the soi structure; implementing oxidation process at two or more temperatures and heat treatment process at least once during the oxidation process to form a germanium cohesion layer and a silicon dioxide layer; and removing the silicon dioxide layer.. .
Iucf-hyu

Method and structure for finfet device

The present disclosure describes a fin-like field-effect transistor (finfet). The device includes one or more fin structures over a substrate, each with source/drain (s/d) features and a high-k/metal gate (hk/mg).
Taiwan Semiconductor Manufacturing Company, Ltd.

Method for semiconductor device fabrication

A method of forming a semiconductor device includes receiving a substrate with a gate structure and forming a spacer layer over the substrate and the gate structure. The method further includes implanting carbon into the spacer layer at an angle tilted away from a first direction perpendicular to a top surface of the substrate, which increases etch resistance of the spacer layer on sidewalls of the gate structure.
Taiwan Semiconductor Manufacturing Company, Ltd.

Semiconductor assemblies with flexible substrates

Embodiments of semiconductor assemblies, and related integrated circuit devices and techniques, are disclosed herein. In some embodiments, a semiconductor assembly may include a flexible substrate, a polycrystalline semiconductor material, and a polycrystalline dielectric disposed between and adjacent to the flexible substrate and the polycrystalline semiconductor material.
Intel Corporation

Biocontrol

Provided is an arthropod male germline gene expression system suitable for conditional expression of an effector gene in an arthropod male germline. The system comprises a first expression unit comprising an effector gene and a promoter therefor operably linked thereto; and a second expression unit.
Oxitec Limited

Fluoride phosphor, manufacturing the same, and light emitting device

A fluoride phosphor includes fluoride particles represented by axmfy:mnz4+ where a is at least one selected from lithium (li), sodium (na), potassium (k), rubidium (rb), and cesium (cs), m is at least one selected from silicon (si), titanium (ti), zirconium (zr), hafnium (hf), germanium (ge) and tin (sn), a compositional ratio x of a satisfies 2≦x≦3, and a compositional ratio y of f satisfies 4≦y≦7; and an organic material physically adsorbed onto surfaces of the fluoride particles to allow the fluoride particles to have hydrophobicity. The fluoride particles have a concentration of mn4+ gradually reduced from respective centers to respective surfaces of the fluoride particles..

Use of synergistic microorganisms and nutrients to produce signals that facilitate the germination and plant root colonization of mycorrhizal fungi in phosphorus rich environments

A composition of matter comprising: a combination of a phytate and a plurality of microorganisms comprising a trichoderma virens fungus, a bacillus amyloliquefaciens bacterium, and one or a plurality of mycorrhizae fungi that is placed in the vicinity of a plant root in a manner that allows the microorganisms in the composition of matter to colonize said plant root; and a method for increasing plant yield comprising: placing a combination of a phytate and a plurality of microorganisms comprising a trichoderma virens fungus, a bacillus amyloliquefaciens bacterium, and one or a plurality of mycorrhizae fungi in the vicinity of a plant root in a manner that allows the microorganisms in the composition of matter to colonize said plant root.. .
Novozymes Bioag A/s

Subpopulations of spore-like cells and uses thereof

Subpopulations of spore-like cells expressing specific cell surface and gene expression markers are provided. In one embodiment, the cells express at least one cell surface or gene expression marker selected from the group consisting of oct4, nanog, zfp296, cripto, gdf3, utf1, ecat1, esg1, sox2, pax6, nestin, sca-1, cd29, cd34, cd90, b1 integrin, ckit, sp-c, cc10, sf1, dax1, and scg10.
Vbi Technologies, L.l.c.

Methods for making anodes for germanium-containing lithium-ion devices

Methods for making anodes for lithium ion devices are provided. The methods include milling germanium powder, carbon, and boron carbide powder to form a nano-particle mixture having a particle size of 20 to 100 nm; adding an emulsion of tungsten carbide nano-particles having a particle size of 20 to 60 nm to the mixture to form an active material; and adding a polymeric binder to the active material to form the anode, wherein the weight percentage of the germanium in the anode is between 5 to 80 weight % of the total weight of the anode, the weight percentage of boron in the anode is between 2 to 20 weight % of the total weight of the anode and the weight percentage of tungsten in the anode is between 5 to 20 weight % of the total weight of the anode..
Storedot Ltd.

Local germanium condensation for suspended nanowire and finfet devices

A semiconductor wafer is provided, where the semiconductor wafer includes a semiconductor substrate and a hard mask layer formed on the semiconductor substrate. Fins are formed in the semiconductor substrate and the hard mask layer.
International Business Machines Corporation

Method of using a sacrifical gate structure to make a metal gate finfet transistor

A self-aligned sige finfet device features a relaxed channel region having a high germanium concentration. Instead of first introducing germanium into the channel and then attempting to relax the resulting strained film, a relaxed channel is formed initially to accept the germanium.
Stmicroelectronics, Inc.

Implementing a hybrid finfet device and nanowire device utilizing selective sgoi

A silicon-on-insulator substrate which includes a semiconductor substrate, a buried oxide layer, and a semiconductor layer is provided. A hard mask layer is formed over a first region of the silicon-on-insulator substrate.
International Business Machines Corporation

Germanium-based cmos comprising silicon cap formed over pmos region having a thickness less than that over nmos region

A semiconductor structure includes a germanium substrate having a first region and a second region. A first silicon cap is over the first region of the germanium substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.



Germ topics:
  • Semiconductor
  • Transistors
  • Semiconductor Material
  • Ion Source
  • Optical Fiber
  • Photodiode
  • Electrical Signal
  • Level Shift
  • Source Follower
  • Transimpedance Amplifier
  • Movable Barrier
  • Prophylactic
  • Immunoglobulin
  • Immunoglobulins
  • Evaporator


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    This listing is a sample listing of patent applications related to Germ for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Germ with additional patents listed. Browse our RSS directory or Search for other possible listings.


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