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This page is updated frequently with new Germ-related patent applications. Subscribe to the Germ RSS feed to automatically get the update: related Germ RSS feeds. RSS updates for this page: Germ RSS RSS


International Business Machines

Cmos protection during germanium photodetector processing

Date/App# patent app List of recent Germ-related patents
02/26/15
20150059022
 Genes controlling plant root growth and development for stress tolerance and  their use patent thumbnailnew patent Genes controlling plant root growth and development for stress tolerance and their use
Microarrays are employed to analyze soybean transcriptome under water stress conditions in different regions of the root at vegetative stage. Drought responsive genes and transcription factors are identified which may be used for enhancing drought tolerance in soybean or other plants through genetic/metabolic engineering.
The Curators Of The University Of Missouri
02/26/15
20150059009
 Methods for making fully human bispecific antibodies using a common light chain patent thumbnailnew patent Methods for making fully human bispecific antibodies using a common light chain
A genetically modified mouse is provided, wherein the mouse expresses an immunoglobulin light chain repertoire characterized by a limited number of light chain variable domains. Mice are provided that express just one or a few immunoglobulin light chain variable domains from a limited repertoire in their germline.
Regeneron Pharmaceuticals, Inc.
02/26/15
20150056698
 Primate embryonic stem cells patent thumbnailnew patent Primate embryonic stem cells
A purified preparation of primate embryonic stem cells is disclosed. This preparation is characterized by the following cell surface markers: ssea-1 (−); ssea-4 (+); tra-1-60 (+); tra-1-81 (+); and alkaline phosphatase (+).
Wisconsin Alumni Research Foundation
02/26/15
20150055923
 Method for connecting multi-core fiber, multi-core fiber, and  manufacturing multi-core fiber patent thumbnailnew patent Method for connecting multi-core fiber, multi-core fiber, and manufacturing multi-core fiber
A multicore fiber 1 includes a plurality of cores 3 disposed at predetermined intervals and surrounded by a cladding 5. The multicore fiber 1 also includes a marker 7 formed apart from the cores 3.
Furukawa Electric Co.,ltd.
02/26/15
20150055438
 Formation stability modeling patent thumbnailnew patent Formation stability modeling
A method can include receiving data that characterizes anisotropy of a formation; receiving a model that models one or more planes of weakness in an anisotropic formation; and, based at least in part on the model and the data, outputting information germane to stability of a bore in an anisotropic formation.. .
Schlumberger Technology Corporation
02/26/15
20150054072
 Late in-situ doped sige junctions for pmos devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations patent thumbnailnew patent Late in-situ doped sige junctions for pmos devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations
A hkmg device with pmos esige source/drain regions is provided. Embodiments include forming first and second hkmg gate stacks on a substrate, forming a nitride liner and oxide spacers on each side of each hkmg gate stack, performing halo/extension implants at each side of each hkmg gate stack, forming an oxide liner and nitride spacers on the oxide spacers of each hkmg gate stack, forming deep source/drain regions at opposite sides of the second hkmg gate stack, forming an oxide hardmask over the second hkmg gate stack, forming embedded silicon germanium (esige) at opposite sides of the first hkmg gate stack, and removing the oxide hardmask..
Globalfoundries Singapore Pte. Ltd.
02/26/15
20150054041
 Cmos protection during germanium photodetector processing patent thumbnailnew patent Cmos protection during germanium photodetector processing
A method of protecting a cmos device within an integrated photonic semiconductor structure is provided. The method may include depositing a conformal layer of germanium over the cmos device and an adjacent area to the cmos device, depositing a conformal layer of dielectric hardmask over the germanium, and forming, using a mask level, a patterned layer of photoresist for covering the cmos device and a photonic device formation region within the adjacent area.
International Business Machines Corporation
02/26/15
20150054031
 Tin doped iii-v material contacts patent thumbnailnew patent Tin doped iii-v material contacts
Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be implemented, for example, using a metal contact such as one or more metals/alloys on silicon or silicon germanium (sige) source/drain regions.
Intel Corporation
02/26/15
20150053928
 Silicon and silicon germanium nanowire formation patent thumbnailnew patent Silicon and silicon germanium nanowire formation
Among other things, one or semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. For example, one or more silicon and silicon germanium stacks are utilized to form pmos transistors comprising germanium nanowire channels and nmos transistors comprising silicon nanowire channels.
Taiwan Semiconductor Manufacturing Company Limited
02/26/15
20150053624
 Portable water purification system using one or more low output power uv light sources patent thumbnailnew patent Portable water purification system using one or more low output power uv light sources
A water purification system includes one or more germicidal uv light sources that operate within an amplifying chamber that contains a given amount of fluid as a batch or as flowing through the chamber at any given time. The amplifying chamber has a highly reflective inner surface that redirects the germicidal uv light that reaches the highly reflective inner surface back through the fluid simultaneously in substantially all directions.
Hydro-photon, Inc.
02/19/15
20150050808

Adhesion layer for through silicon via metallization


To achieve the foregoing and in accordance with the purpose of the present invention, a method for forming copper filled through silicon via features in a silicon wafer is provided. Through silicon vias are etched in the wafer.
Lam Research Corporation
02/19/15
20150050639

Molecular universal detection of citrus viroids


The present invention provides methods for universally detecting citrus viroids in plant material such as germplasm. In particular embodiments, the invention enables the determination of citrus viroid infection and plant resistance.
The Regents Of The University Of California
02/19/15
20150048485

Methods of forming films including germanium tin and structures and devices including the films


Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an epitaxial chemical vapor deposition reactor, wherein a ratio of a tin precursor to germane is less than 0.1.
Asm Ip Holding B.v.
02/19/15
20150048417

Germanium barrier embedded in mos devices


An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is in the opening, wherein the first silicon germanium region has a first germanium percentage.
Taiwan Semiconductor Manufacturing Company, Ltd.
02/12/15
20150047073

Synthetic compounds for vegetative aba responses


The present invention provides agonist compounds that active aba receptors, and agricultural formulations comprising the agonist compounds. The agricultural formulations are useful for inducing aba responses in plant vegetative tissues, reducing abiotic stress in plants, and inhibiting germination of plant seeds.
The Regents Of The University Of California
02/12/15
20150045610

Method of modifying spermatogenesis, spermiogenesis and/or fertility in mammals


Methods and compositions for modifying fertility and/or spermatogenesis or spermiogenesis in a male mammalian subject involve administering to the subject or contacting the subject's testis cells, germ cells or sperm with a composition that modifies the activation, nucleic acid expression, protein expression, signaling or activity of one or more t1r3 receptors or an intermediate in the signaling pathways thereof in the subject's testis cells or germ cells. In another embodiment, the method further involves administering to the subject or contacting the subject's testis cells, germ cells or sperm with a composition that modifies the activation, nucleic acid expression, protein expression, signaling or activity of g-α-gustducin, or an intermediate in the signaling pathways thereof.
Monell Chemical Senses Center
02/12/15
20150045571

Method for preparing an organofunctional compound


Claimed is a method for making an organofunctional compound of formula rbmcxd comprising the following steps: (i) contacting a transition metal catalyst with a mixture including hydrogen gas and a halide of formula mxa to form a m-containing transition metal catalyst; (ii) contacting the m-containing transition metal catalyst with an organohalide to form the organofunctional compound of formula r mcxd. In the above formulae, m is an element selected from antimony, arsenic, bismuth, boron, cadmium, gallium, germanium, indium, lead, mercury, phosphorus, selenium, sulfur, tellurium, and tin.
Dow Corning Corporation
02/12/15
20150041918

Self-aligned dual-metal silicide and germanide formation


A method includes growing an epitaxy semiconductor region at a major surface of a wafer. The epitaxy semiconductor region has an upward facing facet facing upwardly and a downward facing facet facing downwardly.
Taiwan Semiconductor Manufacturing Company, Ltd.
02/12/15
20150041912

Gate stacks including taxsiyo for mosfets


Provided are field effect transistor (fet) assemblies and methods of forming thereof. An fet assembly may include a dielectric layer formed from tantalum silicon oxide and having the atomic ratio of silicon to tantalum and silicon (si/(ta+si)) of less than 5% to provide a low trap density.
Intermolecular, Inc.
02/12/15
20150041853

Bonded epitaxial oxide structures for compound semiconductor on silicon substrates


A structure including a compound semiconductor layer epitaxially grown on an epitaxial oxide layer is provided wherein the lattice constant of the epitaxial oxide layer may be different from the semiconductor substrate on which it is grown. Fabrication of one structure includes growing a graded semiconductor layer stack to engineer a desired lattice parameter on a semiconductor substrate or layer.
International Business Machines Corporation
02/12/15
20150041852

Modulating germanium percentage in mos devices


An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage.
Taiwan Semiconductor Manufacturing Comapny, Ltd.
02/12/15
20150041843

Deep-red light-emitting magnesium fluoro-germanate fluoroescent body and producing same


The deep red light-emitting magnesium fluorogermanate phosphor prepared by calcining a mixture comprising a fine magnesium oxide powder having a bet specific surface area in the range of 5-200 m2/g, a fluorine compound, a germanium compound and a manganese compound gives a light emission having a maximum peak of increased strength in the wavelength region of 640-680 nm upon excitation with a light having a wavelength of 400 nm.. .
Ube Material Industries, Ltd.
02/12/15
20150041747

Phase change material layers


A phase change material layer includes germanium (ge), antimony (sb), tellurium (te) and at least one impurity elements. An atomic concentration of impurity elements ranges from about 0<a≦about 0.25 and an atomic concentration of antimony (sb) ranges from about 0.03<c≦about 0.15..
Samsung Electronics Co., Ltd.
02/12/15
20150041390

Carbon block filter for removal of heavy metals and manufacturing the same


A carbon block filter for removal of heavy metals and a method for manufacturing the same are disclosed. The carbon block filter includes 50 wt % to 60 wt % of activated carbon and 30 wt % to 40 wt % of an ultra-high molecular weight polyethylene binder.
Altwelltech Inc.
02/05/15
20150038330

Chemical compositions and methodology to enhance plant growth and development


Plant seeds, seedlings, or developing plants are treated with aqueous, dry, or appropriately solvated chemical formulations composed of nucleotides or nucleosides buffered with an effective amount of non-toxic biologically compatible agents, simultaneously with an antioxidant and lipoxygenase enzyme inhibitor. The purpose is to improve or optimize seed germination rate, seedling vigor, and ultimately plant growth characteristics and yield performance.
02/05/15
20150038019

Triple extension adaptor


The present invention relates to a triple extension adaptor including a cover forming a plurality of socket ports in different shapes, a bottom assembled with the cover, a receipt compartment within the bottom and with an opening at side, a rotary plug within the receipt compartment wherein a overload tripping switch is used along with a capacitor and a surge arrestor for safety. An earth connection is for effective earthing of german or french plugs while the rotary plug can connect to an electrical wire or a wall socket.
Xyz Science Co., Ltd.
02/05/15
20150037461

Method for producing fermented milk product using sterile full-fat soybean powder as starting material and fermented milk product


Provided are a production method for an edible fermented dairy product using, as a raw material, sterile full fat soy flour, which has a very high nutritional value and has a markedly improved taste evaluation that includes flavor and smooth texture, and a fermented dairy product produced by the method. A production method for a fermented dairy product includes the steps of: producing sterile full fat soy flour having a grain size of from 100 to 1,000 meshes by pulverizing sterile dehulled soybeans prepared so as to have a bacterial count of 300 cells/g or less by using a method of separating whole soybeans into cotyledons, germs, and hulls; adding water to the sterile full fat soy flour to prepare a powdered soy juice, followed by sterilizing the powdered soy juice by heating; homogenizing the powdered soy juice to prepare a homogenized powdered soy juice; and adding a lactic acid bacterium to the homogenized powdered soy juice, followed by fermentation to prepare fermented milk..
Pelican Co., Ltd.
02/05/15
20150035017

Contact structure of semiconductor device


The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface; a fin structure extending upward from the substrate major surface, wherein the fin structure comprises a first fin, a second fin, and a third fin between the first fin and second fin; a first germanide over the first fin, wherein a first bottom surface of the first germanide has a first acute angle to the major surface; a second germanide over the second fin on a side of the third fin opposite to first germanide substantially mirror-symmetrical to each other; and a third germanide over the third fin, wherein a third bottom surface of the third germanide has a third acute angle to the major surface less than the first acute angle..
Taiwan Semiconductor Manufacturing Company, Ltd.
02/05/15
20150034013

Method and system for feeding an animal a consumable feed product and vegetation from a container


Consumable feed products and vegetation are delivered to animals using a single container in which the container holds the feed product and is used to deliver the feed and which includes ungerminated seeds embedded in the container body. The seeds are caused to germinate and produce vegetation from the container body, and the germinated seeds and/or vegetation is fed to the animal.
Purina Animal Nutrition Llc
01/29/15
20150033406

Genetic markers associated with drought tolerance in maize


The presently disclosed subject matter relates to methods and compositions for identifying, selecting, and/or producing drought tolerant maize plants or germplasm. Maize plants or germplasm that have been identified, selected, and/or produced by any of the methods of the presently disclosed subject matter are also provided..
Syngenta Participations Ag
01/29/15
20150033305

Methods and systems for secure and reliable identity-based computing


The embodiments herein provide a secure computing resource set identification, evaluation, and management arrangement, employing in various embodiments some or all of the following highly reliable identity related means to establish, register, publish and securely employ user computing arrangement resources in satisfaction of user set target contextual purposes. Systems and methods may include, as applicable, software and hardware implementations for identity firewalls; awareness managers; contextual purpose firewall frameworks for situationally germane resource usage related security, provisioning, isolation, constraining, and operational management; liveness biometric, and assiduous environmental, evaluation and authentication techniques; repute systems and methods assertion and fact ecosphere; standardized and interoperable contextual purpose related expression systems and methods; purpose related computing arrangement resource and related information management systems and methods, including situational contextual identity management systems and methods; and/or the like..
Advanced Elemental Technologies, Inc.
01/29/15
20150031188

Method for isolating active regions in germanium-based mos device


Disclosed herein is a method for isolating active regions in a germanium-based mos device. A surface of a germanium-based substrate is covered by a thin polysilicon layer or a poly-sige layer, and an isolation structure of germanium dioxide covered by a silicon dioxide layer or a sige oxide layer on top is formed by means of two steps of oxidation in a case of the active regions are protected.
Peking University
01/29/15
20150031183

Semiconductor devices including silicide regions and methods of fabricating the same


A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or carbon. In the method, a gate electrode is formed on a semiconductor substrate with a gate insulating layer interposed therebetween.
Samsung Electronics Co., Ltd.
01/29/15
20150030739

Dry processing technique and device for corn


A dry processing technique for corn includes the stages of cleaning, conditioning, debranning, degerming and grits breaking, and germ screening and grits extracting. The debranning stage includes first stirred debranning, dampening and second stirred debranning in sequence.
01/29/15
20150028454

Finfet structures having silicon germanium and silicon channels


Silicon and silicon germanium fins are formed on a semiconductor wafer or other substrate in a manner that facilitates production of closely spaced nfet and pfet devices. A patterned mandrel layer is employed for forming one or more recesses in the wafer prior to the epitaxial growth of a silicon germanium layer that fills the recess.
International Business Machines Corporation
01/29/15
20150028443

A ge-si avalanche photodiode with silicon buffer layer and edge electric field buffer region


Various embodiments of a germanium-on-silicon (ge—si) avalanche photodiode are provided. In one aspect, the ge—si avalanche photodiode utilizes a silicon buffer layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode.
Sifotonics Technologies Co., Ltd.
01/29/15
20150028426

Buried sige oxide finfet scheme for device enhancement


The present disclosure relates to a fin field effect transistor (finfet) device having a buried silicon germanium oxide structure configured to enhance performance of the finfet device. In some embodiments, the finfet device has a three-dimensional fin of semiconductor material protruding from a substrate at a position located between first and second isolation regions.
Taiwan Semiconductor Manufacturing Co., Ltd.
01/29/15
20150028386

Ge-si p-i-n photodiode with reduced dark current and fabrication method thereof


Various embodiments of a germanium-on-silicon (ge—si) photodiode are provided along with the fabrication method thereof. In one aspect, a ge—si photodiode includes a doped bottom region at the bottom of a germanium layer, formed by thermal diffusion of donors implanted into a silicon layer.
Sifotonics Technologies Co., Ltd.
01/29/15
20150028348

Forming embedded source and drain regions to prevent bottom leakage in a dielectrically isolated fin field effect transistor (finfet) device


Approaches for isolating source and drain regions in an integrated circuit (ic) device (e.g., a fin field effect transistor (finfet)) are provided. Specifically, the finfet device comprises a gate structure formed over a finned substrate; an isolation oxide beneath an active fin channel of the gate structure; an embedded source and a drain (s/d) formed adjacent the gate structure and the isolation oxide; and an epitaxial (epi) bottom region of the embedded s/d, the epi bottom region counter doped to a polarity of the embedded s/d.
Globalfoundries Inc.
01/29/15
20150028286

Method for growing germanium/silicon-germanium superlattice


A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (sls) using an ultra-high vacuum-chemical vapor deposition (uhv-cvd) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth.
Bae Systems Information & Electronic Systems Integration Inc.
01/29/15
20150028268

Method for manufacturing highly pure silicon, highly pure silicon obtained by this method, and silicon raw material for manufacturing highly pure silicon


Provided are a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon..
Silicio Ferrosolar S.l.
01/29/15
20150028139

Grain crushing apparatuses and processes


Disclosed are grain crushing apparatuses and processes for processing grain. In one embodiment, a grain crushing apparatus includes a first and second sidewall spaced apart from one another a throat dimension in a first direction, and a first and second support shaft positioned transverse to the first and sidewall.


Popular terms: [SEARCH]

Germ topics: Semiconductor, Transistors, Semiconductor Material, Ion Source, Optical Fiber, Photodiode, Electrical Signal, Level Shift, Source Follower, Transimpedance Amplifier, Movable Barrier, Prophylactic, Immunoglobulin, Immunoglobulins, Evaporator

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This listing is a sample listing of patent applications related to Germ for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Germ with additional patents listed. Browse our RSS directory or Search for other possible listings.
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