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Germ patents

      

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new patent Solar cell and manufacturing the same
A solar cell and a method of manufacturing the same are provided. The method comprises: forming a first electrode layer on a substrate; forming a semiconductor film of first conduction type on the first electrode layer; forming a germanium film on the semiconductor film of first conduction type, and topologizing the germanium film by using a functionalization element so as to obtain a semiconductor film of second conduction type having characteristics of topological insulator, the semiconductor film of first conduction type mating with the semiconductor film of second conduction type having characteristics of topological insulator to form a p-n junction; and forming a second electrode layer on the semiconductor film of second conduction type.
Boe Technology Group Co., Ltd.


new patent Germanium dual-fin field effect transistor
In one example, a field effect transistor includes a pair of fins positioned in a spaced apart relation. Each of the fins includes germanium.
International Business Machines Corporation


new patent Silicon germanium-on-insulator formation by thermal mixing
A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent formation of a silicon germanium-on-insulator material..
International Business Machines Corporation


new patent Germanium dual-fin field effect transistor
In one example, a field effect transistor includes a pair of fins positioned in a spaced apart relation. Each of the fins includes germanium.
International Business Machines Corporation


new patent Strain release in pfet regions
A method for fabricating a semiconductor device, includes providing a strained silicon on insulator (ssoi) structure, the ssoi structure comprises, a dielectric layer disposed on a substrate, a silicon germanium layer disposed on the dielectric layer, and a strained semiconductor material layer disposed directly on the silicon germanium layer, forming a plurality of fins on the ssoi structure, forming a gate structure over a portion of at least one fin in a nfet region, forming a gate structure over a portion of at least one fin in a pfet region, removing the gate structure over the portion of the at least one fin in the pfet region, removing the silicon germanium layer exposed by the removing, and forming a new gate structure over the portion of the at least one fin in the pfet region, such that the new gate structure surrounds the portion on all four sides.. .
International Business Machines Corporation


new patent Silicon germanium fin
A method includes forming a multilayered stack on a surface of a supporting layer. The multilayered stack is composed of alternating layers of compressively strained silicon germanium (si1-xgex) and tensily strained carbon-doped silicon (si:c).
Globalfoundries U.s. 2 Llc


new patent Method and structure to form tensile strained sige fins and compressive strained sige fins on a same substrate
A method of forming a semiconductor structure that includes compressive strained silicon germanium alloy fins having a first germanium content and tensile strained silicon germanium alloy fins having a second germanium content that is less than the first germanium content is provided. The different strained and germanium content silicon germanium alloy fins are located on a same substrate.
Globalfoundries Inc.


new patent Integration of hybrid germanium and group iii-v contact epilayer in cmos
A trench contact epilayer in a semiconductor device is provided. Embodiments include forming trenches through an interlayer dielectric (ild) over source/drain regions in nfet and pfet regions; depositing a conformal silicon nitride (sin) layer over the ild and in the trenches; removing the sin layer in the pfet region; growing a germanium (ge) epilayer over the source/drain regions in the pfet region; depositing metal over the ild and in the trenches in the nfet and pfet regions; etching the metal in the nfet region to expose the conformal sin layer; removing the sin layer in the nfet region; growing a group iii-v epilayer over the source/drain regions in the nfet region; and depositing metal over the ild and in the trenches in the nfet region..
Globalfoundries Inc.


new patent Germanium dual-fin field effect transistor
In one example, a field effect transistor includes a pair of fins positioned in a spaced apart relation. Each of the fins includes germanium.
International Business Machines Corporation


new patent Silicon germanium-on-insulator formation by thermal mixing
A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent formation of a silicon germanium-on-insulator material..
International Business Machines Corporation


new patent

Visible-light photoinitiators and uses thereof

Described herein are acyl germanium photoinitiator for cost-effective and time-efficient method for producing uv-absorbing contact lenses capable of blocking ultra-violet (“uv”) radiation and optionally (but preferably) violet radiation with wavelengths from 380 nm to 440 nm, thereby protecting eyes to some extent from damages caused by uv radiation and potentially from violet radiation. This invention also provides a method for making uv-absorbing contact lenses made by using an acyl germanium photoinitiator of the invention..
Novartis Ag

new patent

Optical component, infrared camera, and manufacturing optical component

The invention provides an optical component, an infrared camera including the optical component, and a method for manufacturing the optical component. Antireflection materials 3a are formed on a chalcogenide glass 2 of which a compositional ratio of germanium and selenium is 60 percent or greater.
Fujifilm Corporation

new patent

Tomato plants with improved disease resistance

The present disclosure provides tomato plants exhibiting resistance to leveillula taurica (lt) and lacking traits associated with linkage drag such as an undesirable orange fruit exocarp color. Such plants may comprise novel introgressed genomic regions associated with disease resistance from s.
Seminis Vegetable Seeds, Inc.

new patent

Anaerobic germination-tolerant plants and related materials and methods

The present invention provides methods and materials useful for improving early vigor of plants during germination. The methods and materials described herein are useful for improving early vigor of plants grown under either aerobic or anaerobic conditions.
International Rice Research Institute

new patent

Cancer therapy using cldn6 target-directed antibodies in vivo

The invention relates to the treatment and/or prevention of tumor diseases associated with cells expressing cldn6, in particular cancer and cancer metastasis using antibodies which bind to cldn6. The present application demonstrates that the binding of antibodies to cldn6 on the surface of tumor cells is sufficient to inhibit growth of the tumor and to prolong survival and extend the lifespan of tumor patients.
Johannes Gutenberg-universitat Mainz

Method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors integrated in a cmos soi wafer

A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (hpts) integrated in a wafer are disclosed and may include receiving optical signals via optical fibers operably coupled to a top surface of the chip. Electrical signals may be generated utilizing hpts that detect the optical signals.
Luxtera, Inc.

Semiconductor devices, a fluid sensor and a forming a semiconductor device

A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure.
Infineon Technologies Ag

High mobility strained channels for fin-based nmos transistors

Techniques are disclosed for incorporating high mobility strained channels into fin-based nmos transistors (e.g., finfets such as double-gate, trigate, etc), wherein a stress material is cladded onto the channel area of the fin. In one example embodiment, a germanium or silicon germanium film is cladded onto silicon fins in order to provide a desired tensile strain in the core of the fin, although other fin and cladding materials can be used.
Intel Corporation

Silicon germanium heterojunction bipolar transistor structure and method

Disclosed is an improved semiconductor structure (e.g., a silicon germanium (sige) hetero-junction bipolar transistor) having a narrow essentially interstitial-free sic pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the sic pedestal to produce both a narrow sic pedestal and an essentially interstitial-free collector.
Ultratech, Inc.

Finfets with high quality source/drain structures

A semiconductor structure is provided that includes a silicon germanium alloy fin located on a portion of a topmost surface of an insulator layer. A functional gate structure straddles a portion of the silicon germanium alloy fin and is located on other portions of the topmost surface of the insulator layer.
International Business Machines Corporation

Low reflectance back-side imager

A back-side imager includes a matrix of photosites in an active layer. An interconnect layer covers the active layer.
Stmicroelectronics (crolles 2) Sas

Silicon-germanium fin formation

Forming a set of semiconductor fins is disclosed. Forming the set of semiconductor fins can include forming a base structure including a silicon substrate, an insulator layer stacked on the silicon substrate, and a plurality of silicon semiconductor fins each stacked directly on the insulator layer.
International Business Machines Corporation

Systems and methods for annealing semiconductor structures

Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure.
Taiwan Semiconductor Manufacturing Company Limited

Semiconductor element manufacturing method

Disclosed is a method of manufacturing a semiconductor element by implanting a dopant to a substrate to be processed. High frequency plasma is generated within a processing container by using microwaves.
Tokyo Electron Limited

Silicon germanium-on-insulator formation by thermal mixing

A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent formation of a silicon germanium-on-insulator material..
International Business Machines Corporation

Multipiece near field transducers (nfts)

Devices having air bearing surfaces (abs), the devices including a near field transducer (nft) that includes a disc configured to convert photons incident thereon into plasmons; and a peg configured to couple plasmons coupled from the disc into an adjacent magnetic storage medium, wherein at least one of a portion of the peg, a portion of the disc, or a portion of both the peg and the disc include a multilayer structure including at least two layers including at least one layer of a first material and at least one layer of a second material, wherein the first material and the second material are not the same and wherein the first and the second materials independently include aluminum (al), antimony (sb), bismuth (bi), boron (b), barium (ba), calcium (ca), cerium (ce), chromium (cr), cobalt (co), copper (cu), erbium (er), gadolinium (gd), gallium (ga), germanium (ge), gold (au), hafnium (hf), indium (in), iridium (ir), iron (fe), lanthanum (la), magnesium (mg), manganese (mn), molybdenum (mo), nickel (ni), niobium (nb), osmium (os), palladium (pd), platinum (pt), rhenium (re), rhodium (rh), ruthenium (ru), scandium (sc), silicon (si), silver (ag), strontium (sr), tantalum (ta), thorium (th), tin (sn), titanium (ti), vanadium (v), tungsten (w), ytterbium (yb), yttrium (y), zirconium (zr), or combinations thereof.. .
Seagate Technology Llc



Germ topics:
  • Semiconductor
  • Transistors
  • Semiconductor Material
  • Ion Source
  • Optical Fiber
  • Photodiode
  • Electrical Signal
  • Level Shift
  • Source Follower
  • Transimpedance Amplifier
  • Movable Barrier
  • Prophylactic
  • Immunoglobulin
  • Immunoglobulins
  • Evaporator


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    This listing is a sample listing of patent applications related to Germ for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Germ with additional patents listed. Browse our RSS directory or Search for other possible listings.


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