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Germ patents



      

This page is updated frequently with new Germ-related patent applications.




Date/App# patent app List of recent Germ-related patents
04/07/16
20160099370 
 Multi-junction solar cell patent thumbnailMulti-junction solar cell
A multi-junction solar cell comprising a high-crystalline silicon solar cell and a high-crystalline germanium solar cell. The high-crystalline silicon solar including a first p-doped layer and a n+ layer and the high-crystalline germanium solar cell including a second p layer and a heavily doped layer.
International Business Machines Corporation


04/07/16
20160099334 
 Bipolar transistor manufacturing method patent thumbnailBipolar transistor manufacturing method
A method for manufacturing a bipolar transistor, including the steps of: forming a first surface-doped region of a semiconductor substrate having a semiconductor layer extending thereon with an interposed first insulating layer; forming, at the surface of the device, a stack of a silicon layer and of a second insulating layer; defining a trench crossing the stack and the semiconductor layer opposite to the first doped region, and then an opening in the exposed region of the first insulating layer; forming a single-crystal silicon region in the opening; forming a silicon-germanium region at the surface of single-crystal silicon region, in contact with the remaining regions of the semiconductor layer and of the silicon layer; and forming a second doped region at least in the remaining space of the trench.. .
Stmicroelectronics Sa


04/07/16
20160099331 
 Self-aligned dual-metal silicide and germanide formation patent thumbnailSelf-aligned dual-metal silicide and germanide formation
A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a downward facing facet.
Taiwan Semiconductor Manufacturing Company, Ltd.


04/07/16
20160099250 
 Three dimensional nand device with silicon germanium heterostructure channel patent thumbnailThree dimensional nand device with silicon germanium heterostructure channel
A method of making a monolithic three dimensional nand string including forming a stack of alternating layers of a first material and a second material different from the first material over a substrate, forming an at least one opening in the stack, forming at least a portion of a memory film in the at least one opening and forming a first portion of a semiconductor channel followed by forming a second portion of the semiconductor channel in the at least one opening. The second portion of the semiconductor channel comprises silicon and germanium and contains more germanium than a first portion of the semiconductor channel which is located closer to the memory film than the second portion..
Sandisk Technologies Inc.


04/07/16
20160098515 
 Methods for sequence-directed molecular breeding patent thumbnailMethods for sequence-directed molecular breeding
The present invention provides breeding methods and compositions to enhance the germplasm of a plant by the use of direct nucleic acid sequence information. The methods describe the identification and accumulation of preferred nucleic acid sequences in the germplasm of a breeding population of plants..
Monsanto Technology Llc


04/07/16
20160097058 
 Soy gene cluster regions and methods of use patent thumbnailSoy gene cluster regions and methods of use
Methods for conveying pathogen resistance into non-resistant soybean germplasm are provided. In some embodiments, the methods include introgressing pathogen resistance into a non-resistant soybean using one or more nucleic acid markers for marker-assisted breeding among soybean lines to be used in a soybean breeding program, wherein the markers are linked to and/or associated with pathogen resistance.
Syngenta Participations Ag


03/31/16
20160093735 
 Embedded carbon-doped germanium as stressor for germanium nfet devices patent thumbnailEmbedded carbon-doped germanium as stressor for germanium nfet devices
Carbon-doped germanium stressor regions are formed in an nfet device region of a germanium substrate and at a footprint of a functional gate structure. The carbon-doped germanium stressor regions are formed by an epitaxial growth process utilizing monomethylgermane (geh3—ch3) as the carbon source.
International Business Machines Corporation


03/31/16
20160093619 
 Iii-v finfet cmos with iii-v and germanium-containing channel closely spaced patent thumbnailIii-v finfet cmos with iii-v and germanium-containing channel closely spaced
Closely spaced iii-v compound semiconductor fins and germanium-containing semiconductor fins are provided by utilizing mandrel structures for iii-v compound semiconductor material epitaxial growth and subsequent fin formation. Mandrel structures are formed on a semiconductor material stack that includes an uppermost layer of a relaxed germanium-containing material layer.
International Business Machines Corporation


03/31/16
20160093618 
 Single source/drain epitaxy for co-integrating nfet semiconductor fins and pfet semiconductor fins patent thumbnailSingle source/drain epitaxy for co-integrating nfet semiconductor fins and pfet semiconductor fins
A plurality of gate structures are formed straddling nfet semiconductor fins and pfet semiconductor fins which extend upwards from a surface of a semiconductor substrate. A boron-doped silicon germanium alloy material is epitaxially grown from exposed surfaces of both the nfet semiconductor fins and the pfet semiconductor fins not protected by the gate structures.
International Business Machines Corporation


03/31/16
20160093497 
 Salicide formation using a cap layer patent thumbnailSalicide formation using a cap layer
A method of forming a semiconductor device includes forming a gate stack over a first portion of a source and a first portion of a drain. The method includes depositing a first cap layer comprising silicon over a second portion of the source and depositing a second cap layer comprising silicon over a second portion of the drain.
Taiwan Semiconductor Manufacturing Company, Ltd.


03/31/16
20160089684 

Built-in liquid dispensing device


A built-in liquid dispensing device for maintaining a germ-free environment within a vehicle. The built-in liquid dispensing device includes a compartment having an upper wall, a lower wall, one or more sidewalls, and an open front wall that provides access to the interior thereof.

03/31/16
20160089359 

Composition for preventing or treating climacteric symptoms comprising soybean extract comprising coumestrol as an active ingredient


The present invention relates to a composition for, inter alia, preventing or treating a climacteric disease, or preventing or improving a climacteric skin symptom comprising a soybean extract comprising coumestrol as an active ingredient, and more specifically relates to a composition for, inter alia, preventing or treating a climacteric disease, or preventing or improving a climacteric skin symptom comprising a germinated and fermented soybean extract comprising coumestrol as an active ingredient.. .
Amorepacific Corporation


03/24/16
20160087207 

Method of making a multicomponent film


Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as germanium tellurium, antimony germanium, and germanium antimony tellurium (gst) films via an atomic layer deposition (ald) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.
Air Products And Chemicals, Inc.


03/24/16
20160087098 

Semiconductor devices having gate structures and methods of manufacturing the same


Semiconductor devices are provided including an active layer, a gate structure, a spacer, and a source/drain layer. The active layer is on the substrate and includes germanium.

03/24/16
20160087078 

Mos devices having epitaxy regions with reduced facets


An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage.
Taiwan Semiconductor Manufacturing Company, Ltd.


03/24/16
20160087070 

Method and apparatis for source-drain junction formation finfet with quantum barrier and ground plane doping


A portion of a bulk silicon (si) is formed into a fin, having a fin base and, on the fin base, an in-process fin. The fin base is doped si and the in-process fin is silicon germanium (sige).
Qualcomm Incorporated


03/24/16
20160087041 

Method and structure for finfet device


The present disclosure describes a fin-like field-effect transistor (finfet). The device includes one or more fin structures over a substrate, each with source/drain (s/d) features and a high-k/metal gate (hk/mg).
Taiwan Semiconductor Manufacturing Company, Ltd.


03/24/16
20160087040 

Methods for high-k metal gate cmos with sic and sige source/drain regions


A method of manufacturing a semiconductor device includes forming a pmos region and an nmos region in a semiconductor substrate, forming dummy gate structures in the pmos and nmos regions, and forming a gate hard mask layer overlying top portions and sidewalls of the dummy gate structures. The method includes forming silicon carbon regions embedded in the semiconductor substrate on both sides of the dummy gate structure in the nmos region, removing the hard mask layer on top of the dummy gate in the nmos region, and forming silicon germanium regions embedded in the semiconductor substrate on both sides of the dummy gate structure in the pmos region.
Semiconductor Manufacturing International (shanghai) Corporation


03/24/16
20160086800 

Tunneling field effect transistors and transistor circuitry employing same


A p-channel tunneling field effect transistor (tfet) is selected from a group consisting of (i) a multi-layer structure of group iv layers and (ii) a multi-layer structure of group iii-v layers. The p-channel tfet includes a channel region comprising one of a silicon-germanium alloy with non-zero germanium content and a ternary iii-v alloy.
The Ohio State University


03/24/16
20160083755 

Clostridium cadaveris strain and uses of the same


An isolated clostridium cadaveris itri04005 and its uses are provided. The isolated clostridium cadaveris itri04005 was deposited at german collection of microorganisms and cell cultures (deutsche sammlung von mikroorganismen and zellkulturen gmbh, dsmz) under the accession number dsm 32078..
Green Cellulosity Corporation


03/24/16
20160081375 

Whole grain composition comprising hydrolyzed starch


A composition comprising a whole grain with hydrolyzed starch. Although the starch can shift from relatively higher molecular weight moieties to relatively lower molecular weight moieties during hydrolysis, the relative proportions of the principal anatomical components of the caryopses of the grain—the starchy endosperm, germ and bran—remain approximately the same as evinced, for example, by the weight percentages and relative mass ratios of starch, fat, protein, dietary fiber, beta-glucan, and sugar in the composition.
The Quaker Oats Company


03/24/16
20160081336 

Medium with a plant non-metabolizable sugar for improving seed germination


What is described is a nutritive media for a manufactured seed comprising a plant non-metabolizable sugar and a manufactured seed comprising plant non-metabolizable sugar in its nutritive medium. .
Weyerhaeuser Nr Company


03/17/16
20160079427 

Structure and sram finfet device


The present disclosure provides an embodiment of a fin-like field-effect transistor (finfet) device. The device includes a first fin structure disposed over an n-type finfet (nfet) region of a substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.


03/17/16
20160079357 

Oriented bottom-up growth of armchair graphene nanoribbons on germanium


Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (cvd) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium..
Wisconsin Alumni Research Foundation


03/17/16
20160079062 

Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high k at channel


The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species..
Applied Materials, Inc.


03/17/16
20160076111 

Fusants capable of fixing carbon oxides and performing fermentation and the preparation method and use of the same


The target strain is useful in the production of an organic compound such as an organic acid and an alcohol, and one embodiment of the target strain is clostridium tyrobutyricum itri02001, deposited at german collection of microorganisms and cell cultures (deutsche sammlung von mikroorganismen and zellkulturen gmbh, dsmz) under the accession number dsm 32077.. .

03/17/16
20160074546 

Mobile ultraviolet sterilization systems and methods


Sterilization units and systems and related assemblies, devices, and methods are disclosed. The sterilization units may be mobile and used in a variety of locations.

03/17/16
20160073661 

Organic livestock feed, making and methods of use thereof


Disclosed herein are organic livestock feeds, specifically organic poultry feeds, in which organic corn germ is used as an organic methionine supplement. Also described are methods of supplementing organic livestock feeds with methionine and methods of feeding organic livestock..

03/17/16
20160073616 

Method for producing chimeric animal


The method for producing a chimeric animal according to the present invention comprises introducing a mammal-derived cell into the embryo of a mammal, the cell being primed pluripotent stem cell, tissue stem cell, progenitor cell, somatic cell, or germ cell.. .

03/17/16
20160073598 

Markers associated with soybean rust resistance and methods of use therefor


Methods for conveying soybean rust (sbr) resistance into non-resistant soybean germplasm are provided. In some embodiments, the methods include introgressing sbr resistance into a non-resistant soybean using one or more nucleic acid markers for marker-assisted breeding among soybean lines to be used in a soybean breeding program, wherein the markers are linked to and/or associated with sbr resistance.
Syngenta Participations Ag


03/10/16
20160072325 

Station for disinfecting and charging multiple portable electronic devices


Provided is a system for holding a plurality of chargeable portable electronic devices having an enclosure providing a compartment. At least one tray is positioned in the compartment, wherein each tray includes a plurality of slots for receiving the portable electronic devices.
Afc Trident, Inc.


03/10/16
20160071956 

High germanium content silicon germanium fins


Thermal condensation is employed to obtain a finned structure including strained silicon germanium fins having vertical side walls and a germanium content that may be high relative to silicon. A hard mask is used directly on a low-germanium content silicon germanium layer.
International Business Machine Corporation


03/10/16
20160071934 

High mobility strained channels for fin-based transistors


Techniques are disclosed for incorporating high mobility strained channels into fin-based transistors (e.g., finfets such as double-gate, trigate, etc), wherein a stress material is cladded onto the channel area of the fin. In one example embodiment, silicon germanium (sige) is cladded onto silicon fins to provide a desired stress, although other fin and cladding materials can be used.
Intel Corporation


03/10/16
20160071931 

Method of formation of germanium nanowires on bulk substrates


A material stack comprising alternating layers of a silicon etch stop material and a germanium nanowire template material is formed on a surface of a bulk substrate. The material stack and a portion of the bulk substrate are then patterned by etching to provide an intermediate fin structure including a base semiconductor portion and alternating portions of the silicon etch stop material and the germanium nanowire template material.
International Business Machines Corporation


03/10/16
20160071737 

Slurry composition for chemical mechanical polishing of ge-based materials and devices


A cmp slurry composition which provides for a high ge- or sige-to-dielectric material selectivity a low rate of ge or sige recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor.
Uwiz Technology Co., Ltd.


03/10/16
20160071718 

Fluorescent lighting with aluminum nitride phosphors


A fluorescent lamp includes a glass envelope; at least two electrodes connected to the glass envelope; mercury vapor and an inert gas within the glass envelope; and a phosphor within the glass envelope, wherein the phosphor blend includes aluminum nitride. The phosphor may be a wurtzite (hexagonal) crystalline structure al(1-x)mxn phosphor, where m may be drawn from beryllium, magnesium, calcium, strontium, barium, zinc, scandium, yttrium, lanthanum, cerium, praseodymium, europium, gadolinium, terbium, ytterbium, bismuth, manganese, silicon, germanium, tin, boron, or gallium is synthesized to include dopants to control its luminescence under ultraviolet excitation.
Ge Electric Company


03/10/16
20160068602 

Sequence dependent aggregation


Herein is reported a method for reducing the aggregation of an immunoglobulin in solution comprising the steps of i) comparing the amino acid sequence of the fourth framework region of the heavy chain of an antibody with a reference or germline sequence and determining whether one or more threonine residues and/or serine residues have been replaced by a different amino acid residue, and ii) modifying the amino acid sequence of the immunoglobulin by reverting the exchanged threonine residues and/or serine residues back to threonine or serine of the reference or germline sequence and thereby reducing the aggregation of an immunoglobulin in solution.. .
Hoffmann-la Roche Inc.


03/10/16
20160067297 

Eye-refreshing agent to eliminate and alleviate eye fatigue and discomfort


An eye-refreshing agent, the raw materials of which include mung bean germs, eucalyptus leaves, mint leaves, clove leaves, camphor leaves and borneol. The plant cells thereof are respectively subjected to crushing, low-temperature freezing and centrifugation and sound membrane separation to prepare a water-soluble preparation.

03/03/16
20160064580 

Back contact substrate for a photovoltaic cell or module


A back contact substrate for a photovoltaic cell includes a carrier substrate and an electrode, the electrode including an alloy thin film based on at least two elements, at least one first element ma chosen among copper (cu), silver (ag) and gold (au), and at least one second element mb chosen among zinc (zn), titanium (ti), tin (sn), silicon (si), germanium (ge), zirconium (zr), hafnium (hf), carbon (c) and lead (pb).. .
Saint-gobain Glass France


03/03/16
20160064563 

Pfet and cmos containing same


A p-type field effect transistor includes: a gate area; an insulated area, adjacent to the gate area; a source region and a drain region made by silicon germanium, respectively, adjacent to the second side of the insulated area; a channel area, adjacent to the insulated area and formed between the source region and the drain region; a conductive layer, electrically connected to the source region and the drain region, respectively; and a plurality of capping layers, connected between the conductive layer and the source/drain regions, wherein the silicon layer(s) and the silicon germanium layer(s) are stacked alternately, and of which a silicon layer contacts the source/drain silicon germanium regions, while a silicon germanium layer contacts the conductive layer. The present invention also provides a complementary metal oxide semiconductor transistor including the p-type field effect transistor mentioned above..
United Microelectronics Corporation


03/03/16
20160064543 

Finfet with a silicon germanium alloy channel and fabrication thereof


A gate cavity is formed exposing a portion of a silicon fin by removing a sacrificial gate structure that straddles the silicon fin. An epitaxial silicon germanium alloy layer is formed within the gate cavity and on the exposed portion of the silicon fin.
International Business Machines Corporation


03/03/16
20160064531 

Method to form a cylindrical germanium nanowire device on bulk silicon substrate


A method for manufacturing a semiconductor device includes providing a substrate structure having a substrate and a cavity in the substrate, epitaxially growing a sige nanowire in the cavity, and removing a portion of the substrate surrounding the sige nanowire to substantially expose a surface of the sige nanowire. The method further includes oxidizing the exposed surface of the sige nanowire to form an oxide layer, removing the oxide layer by etching, and repeating the oxidizing and removing steps to form a suspended germanium nanowire in the cavity..
Semiconductor Manufacturing International (shanghai) Corporation


03/03/16
20160064526 

Methods of forming alternative channel materials on finfet semiconductor devices


One illustrative method disclosed herein includes forming a recessed fin structure and a replacement fin cavity in a layer of insulating material above the recessed fin structure, forming at least first and second individual layers of epi semiconductor material in the replacement fin cavity, wherein each of the first and second layers have different concentrations of germanium, performing an anneal process on the first and second layers so as to form a substantially homogeneous sige replacement fin in the fin cavity, and forming a gate structure around at least a portion of the replacement fin.. .
Globalfoundries Inc.


03/03/16
20160064520 

Germanium-based quantum well devices


A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel.
Intel Corporation


03/03/16
20160064511 

Finfet with a silicon germanium alloy channel and fabricaton thereof


A gate cavity is formed exposing a portion of a silicon fin by removing a sacrificial gate structure that straddles the silicon fin. An epitaxial silicon germanium alloy layer is formed within the gate cavity and on the exposed portion of the silicon fin.
International Business Machines Corporation


03/03/16
20160064288 

Dual channel material for finfet for high performance cmos


Silicon fins are formed in a bulk silicon substrate and thereafter trench isolation regions are formed between each silicon fin. The silicon fins in nfet and pfet device regions are then recessed.
International Business Machines Corporation


03/03/16
20160064287 

Formation of nickel silicon and nickel germanium structure at staggered times


A method includes providing a first source/drain contact, providing a second source/drain contact, and surrounding the first and second source/drain contacts with a dielectric material layer. The providing a first source/drain contact and the providing a second source/drain contact are performed one after the other..
Taiwan Semiconductor Manufacturing Company Limited


03/03/16
20160064210 

P-fet with graded silicon-germanium channel


A method of forming a semiconductor structure includes etching a semiconductor region of a substrate to form a thinned semiconductor region, and forming a silicon-germanium layer on the thinned semiconductor region, the silicon-germanium layer having a graded concentration profile of germanium atoms.. .
International Business Machines Corporation


03/03/16
20160064068 

Silicon germanium read port for a static random access memory register file


A static random access memory (sram) circuit includes a write port and a read port coupled to the write port. The read port includes a read bit line and a first p-type metal oxide semiconductor (pmos) transistor having a silicon germanium (sige) channel.
Qualcomm Incorporated


03/03/16
20160060715 

Systems and methods for genotyping seed components


The invention provides methods for obtaining genetic material from plant embryos while preserving their viability as well as methods for performing a molecular analysis of plant embryos, particularly with small quantities of genetic material. The methods may include the steps of collecting shed cellular material from one or more plant embryos; obtaining dna from the shed cellular material; performing a molecular analysis of the dna; and germinating at least one of said one or more plant embryos.
Pioneer Hi Bred International Inc


03/03/16
20160060714 

Systems and methods for genotyping seed components


The invention provides methods for obtaining genetic material from plant embryos while preserving their viability as well as methods for performing a molecular analysis of plant embryos, particularly with small quantities of genetic material. The methods may include the steps of collecting shed cellular material from one or more plant embryos; obtaining dna from the shed cellular material; performing a molecular analysis of the dna; and germinating at least one of said one or more plant embryos.
Pioneer Hi Bred International Inc


03/03/16
20160060713 

Systems and methods for genotyping seed components


The invention provides methods for obtaining genetic material from plant embryos while preserving their viability as well as methods for performing a molecular analysis of plant embryos, particularly with small quantities of genetic material. The methods may include the steps of collecting shed cellular material from one or more embryos; obtaining dna from the shed cellular material; performing a molecular analysis of the dna; and germinating at least one of said one or more embryos.
Pioneer Hi Bred International Inc


03/03/16
20160060657 

Methods and compositions for the targeted modification of a genome


Compositions and methods are provided for modifying a genomic locus of interest in a eukaryotic cell, a mammalian cell, a human cell or a non-human mammalian cell using a large targeting vector (ltvec) comprising various endogenous or exogenous nucleic acid sequences as described herein. Further methods combine the use of the ltvec with a crispr/cas system.
Regeneron Pharmaceuticals, Inc.


03/03/16
20160060651 

Expression systems


A gene expression system is provided. The system comprises at least one coding sequence to be expressed in an organism, and at least one promoter operably linked thereto.
Oxitec Limited


03/03/16
20160060650 

Potato fertility restoration


A family 1 cellulose-binding-domain (cbd) encoding gene from phytophthora infestans was used to develop transgenic bintje potato plants. Tests with detached leaflets showed no evidence of increased or decreased resistance to p.
The United States Of America, As Represented By The Secretary Of Agriculture


03/03/16
20160060218 

Strigolactam derivatives as plant growth regulating compounds


The present invention relates to novel strigolactam derivatives, to processes and intermediates for preparing them, to plant growth regulator compositions comprising them and to methods of using them for controlling the growth of plants and/or promoting the germination of seeds.. .
Syngenta Participations Ag


03/03/16
20160060183 

Gibberellic acid (ga3) free kappaphycus alvarezii sap and its application thereof


The present invention relates to a product kappaphycus alvarezii seaweed sap free of gibberellic acid (ga3) and its method of preparation. Kappaphycus alvarezii seaweed sap is a plant stimulant found to enhance yield and quality of a number of crops.
Council Of Scientific & Industrial Research


03/03/16
20160060021 

Seed vault, organizer, manipulator, and seed germinator


A seed vault and organizer to store seeds and organize them for distribution, and having a transport container that can open and close, and contains therein various items that are typically used by person who works with plant seeds, including airtight containers, tube holders, and envelopes for distribution.. .

03/03/16
20160058889 

Prevention of muscular dystrophy by crispr/cas9-mediated gene editing


Duchenne muscular dystrophy (dmd) is an inherited x-linked disease caused by mutations in the gene encoding dystrophin, a protein required for muscle fiber integrity. The disclosure reports crispr/cas9-mediated gene editing (myo-editing) is effective at correcting the dystrophin gene mutation in the mdx mice, a model for dmd.
The Board Of Regents Of The University Of Texas System


03/03/16
20160058847 

Is100- a highly effective enzyme principle for use in dermal therapeutics, and for health and beauty


A aqueous preparation called is 100 consisting of at least a hundred of proteins prepared from wheat germ lysate is provided. The preparation shows protease activity and is considerably stable.
Issar Pharmaceuticals Pvt. Ltd.


03/03/16
20160058789 

Clostridium difficile sporicidal compositions


Disclosed are sporicidal compositions, and methods of use thereof. The sporicidal compositions contain water, an organic solvent, and a spore-germinating agent containing an iodide source, a citrate source or both.
Microdermis Corporation


02/25/16
20160056269 

Method of fabricating a semiconductor device


A method of fabricating a semiconductor device includes forming a channel layer on a substrate, forming a sacrificial layer on the channel layer, forming a hardmask pattern on the sacrificial layer, and performing a patterning process using the hardmask pattern as an etch mask to form a channel portion with an exposed top surface. The channel and sacrificial layers may be formed of silicon germanium, and the sacrificial layer may have a germanium content higher than that of the channel layer..
Samsung Electronics Co., Ltd.


02/25/16
20160056261 

Embedded sigma-shaped semiconductor alloys formed in transistors


A method of forming a semiconductor device is disclosed wherein sigma-shaped cavities are formed in alignment with a gate structure such that a cavity tip of the sigma-shaped cavities has a small lateral distance to the channel region, while a lateral distance from the silicon-germanium material filled into the cavity and extending along the sidewall of the gate structure above the active region is at least maintained, if not increased. A semiconductor device is formed wherein the semiconductor device comprises a gate structure disposed over an active region of a semiconductor substrate.
Globalfoundries Inc.


02/25/16
20160056236 

Silicon and silicon germanium nanowire formation


Among other things, one or semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. For example, one or more silicon and silicon germanium stacks are utilized to form pmos transistors comprising germanium nanowire channels and nmos transistors comprising silicon nanowire channels.
Taiwan Semiconductor Manufacturing Company Limited


02/25/16
20160056054 

Etching method, etching liquid and etching liquid kit to be used in said method, and semiconductor substrate product manufacturing method


There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (ge) and a second layer containing at least one metal element selected from nickel platinum (nipt), titanium (ti), nickel (ni), and cobalt (co), the method including: bringing an etching liquid which contains a specific acid compound into contact with the second layer and selectively removing the second layer.. .
Fujifilm Corporation




Germ topics: Semiconductor, Transistors, Semiconductor Material, Ion Source, Optical Fiber, Photodiode, Electrical Signal, Level Shift, Source Follower, Transimpedance Amplifier, Movable Barrier, Prophylactic, Immunoglobulin, Immunoglobulins, Evaporator

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