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Germ patents



      
           
This page is updated frequently with new Germ-related patent applications.



Date/App# patent app List of recent Germ-related patents
02/04/16
20160035872 
 Method for the formation of silicon and silicon-germanium fin structures for finfet devices patent thumbnailnew patent Method for the formation of silicon and silicon-germanium fin structures for finfet devices
A substrate layer formed of a first semiconductor material includes adjacent first and second regions. Fin structures are formed from the substrate layer in both the first and second regions.
International Business Machines Corporation


02/04/16
20160035852 
 Metal silicide, metal germanide, methods for making the same patent thumbnailnew patent Metal silicide, metal germanide, methods for making the same
In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate.
Asm International N.v.


02/04/16
20160035728 
 Retrograde doped layer for device isolation patent thumbnailnew patent Retrograde doped layer for device isolation
Embodiments herein provide device isolation in a complimentary metal-oxide fin field effect transistor. Specifically, a semiconductor device is formed with a retrograde doped layer over a substrate to minimize a source to drain punch-through leakage.
Globalfoundries Inc.


02/04/16
20160035727 
 Cmos structure with  beneficial nmos and pmos band offsets patent thumbnailnew patent Cmos structure with beneficial nmos and pmos band offsets
A cmos structure with beneficial nmos and pmos band offsets is disclosed. A first silicon germanium layer is formed on a semiconductor substrate.
Globalfoundries Inc.


02/04/16
20160035562 
 Silicon-containing substrate cleaning procedure patent thumbnailnew patent Silicon-containing substrate cleaning procedure
A method for cleaning a substrate, such as a silicon substrate, a silicon-germanium substrate, or other silicon-containing substrate is disclosed. The method includes exposing the substrate to a first plasma configured to attack a sub-oxide on the substrate.
Applied Materials, Inc.


02/04/16
20160032481 
 Method and system for producing crystalline calcium carbonate by the combined use of two gases with different co2 content patent thumbnailnew patent Method and system for producing crystalline calcium carbonate by the combined use of two gases with different co2 content
The invention relates to a particularly energy efficient, two-step method and to a system for the continuous or semi-continuous production of crystalline calcium carbonate (precipitated calcium carbonate, pcc) by reacting calcium hydroxide with co2, the calcium hydroxide being lime milk. In the first step of the germination, the co2-source is exclusively flue gas having a co2-content of between 4-25% <sb/><sb/>.
Papierfabrik August Koehler Se


02/04/16
20160032436 
 Process for making finished or semi-finished articles of silver alloy patent thumbnailnew patent Process for making finished or semi-finished articles of silver alloy
A process for making a finished or semi-finished article of silver alloy, said process comprising the steps of providing a silver alloy containing silver in an amount of at least 77 wt %, copper and an amount of germanium that is preferably at least 0.5 wt % and is effective to reduce tarnishing and/or firestain, making or processing the finished or semi-finished article of the alloy by heating at least to an annealing temperature, gradually cooling the article; and reheating the article to effect precipitation hardening thereof. The avoidance of quenching reduces the risk of damage to the article..

02/04/16
20160032409 
 Genetic loci associated with frogeye leaf spot resistance and brown stem rot resistance and methods of use patent thumbnailnew patent Genetic loci associated with frogeye leaf spot resistance and brown stem rot resistance and methods of use
Various methods and compositions are provided for identifying and/or selecting soybean plants or soybean germplasm with improved resistance to frogeye leaf spot and/or brown stem rot. In certain embodiments, the method comprises detecting at least one marker locus that is associated with resistance to frogeye leaf spot and/or brown stem rot.
Pioneer Hi-bred Internationl, Inc.


02/04/16
20160032397 
 Mast cell cancer-associated germ-line risk markers and uses thereof patent thumbnailnew patent Mast cell cancer-associated germ-line risk markers and uses thereof
Provided herein are methods and compositions for identifying subjects, including canine subjects, as having an elevated risk of developing cancer or having an undiagnosed cancer. These subjects are identified based on the presence of germ-line risk markers..
Animal Health Trust


02/04/16
20160031695 
 Ultraviolet disinfecting device for food and beverage dispensers patent thumbnailnew patent Ultraviolet disinfecting device for food and beverage dispensers
Disinfecting devices and related methods are provided that apply germicidal ultraviolet light to disinfect dispensing components of food and beverage dispensers. A disinfecting holster for a bar gun includes a support surface configured to interface with a bar gun to support the bar gun when stowed in the holster, a housing coupled with the support surface and surrounding a dispensing nozzle of the bar gun when the bar gun is stowed in the holster, and an ultraviolet light source configured to emit germicidal ultraviolet light onto the nozzle.
Automatic Bar Controls, Inc.


02/04/16
20160029686 
new patent

Ultraviolet disinfecting device for food and beverage dispensers


Disinfecting devices and related methods are provided that apply germicidal ultraviolet light to disinfect dispensing components of food and beverage dispensers. A disinfecting holster for a bar gun includes a support surface configured to interface with a bar gun to support the bar gun when stowed in the holster, a housing coupled with the support surface and surrounding a dispensing nozzle of the bar gun when the bar gun is stowed in the holster, and an ultraviolet light source configured to emit germicidal ultraviolet light onto the nozzle.
Automatic Bar Controls, Inc.


02/04/16
20160029584 
new patent

Methods and compositions for watermelon with improved processing qualities and firmness


A watermelon plant that produces fruit having (i) ultra-firm flesh and/or liquid-retaining flesh and (ii) soluble solids of at least about 6 brix. The invention further provides for unique watermelon plants with an ultra-firm flesh phenotype and their progeny.
Monsanto Technology Llc


01/28/16
20160027950 

Methods of low-temperature fabrication of crystalline semiconductor alloy on amorphous substrate


Methods are discussed for producing single-crystal shapes on amorphous materials. A first method deposits a layer of germanium-tin (gesn) alloy comprising between three and sixteen atomic-percent tin on material incapable of seeding crystal formation, the layer is photolithographically defined into a shape having a point having radius less than 100 nanometers; and the shape is annealed by heating to a temperature below 450 degrees celsius.
The Trustees Of Dartmouth College


01/28/16
20160027918 

Semiconductor device


A semiconductor device may include: a semiconductor substrate, a device isolating layer embedded within the semiconductor substrate and defining an active region, a channel region formed in the active region, a gate electrode disposed above the channel region, a gate insulating layer provided between the channel region and the gate electrode, and a silicon germanium epitaxial layer adjacent to the channel region within the active region and including a first epitaxial layer containing a first concentration of germanium, a second epitaxial layer containing a second concentration of germanium, higher than the first concentration, and a third epitaxial layer containing a third concentration of germanium, lower than the second concentration, the first to third epitaxial layers being sequentially stacked on one another in that order.. .

01/28/16
20160027897 

Method of making a strained structure of a semiconductor device


A method of fabricating a field effect transistor (fet) includes forming a channel portion over a first surface of a substrate, wherein the channel portion comprises germanium and defines a second surface above the first surface. The method further includes forming cavities that extend through the channel portion and into the substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.


01/28/16
20160027780 

Method for forming a germanium channel layer for an nmos transistor device, nmos transistor device and cmos device


The disclosed technology generally relates to complementary metal-oxide-silicon (cmos) devices, and more particularly to a transistor device comprising a germanium channel layer, such as an n-channel metal-oxide-silicon (nmos) transistor device. In one aspect, a method of forming a germanium channel layer for an nmos transistor device comprises providing a trench having sidewalls defined by a dielectric material structure and abutting on a silicon substrate's surface, and growing a seed layer in the trench on the surface, where the seed layer has a front surface comprising facets having a (111) orientation.
Imec Vzw


01/28/16
20160027779 

Method for providing an nmos device and a pmos device on a silicon substrate and silicon substrate comprising an nmos device and a pmos device


The disclosed technology generally relates to complementary metal-oxide-silicon (cmos) devices, and more particularly to an n-channel metal-oxide-silicon (nmos) device and a p-channel metal-oxide-silicon (pmos) device that are under different types of strains. In one aspect, a method comprises providing trenches in a dielectric layer on a semiconductor substrate, where at least a first trench defines an nmos region and a second trench defines a pmos region, and where the trenches extend through the dielectric layer and abut a surface of the substrate.
Imec Vzw


01/28/16
20160027640 

Hydroxyl group termination for nucleation of a dielectric metallic oxide


A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination of the surface. A dielectric metal oxide is subsequently deposited by atomic layer deposition.
International Business Machines Corporation


01/28/16
20160026752 

Systems and methods for comprehensive analysis of molecular profiles across multiple tumor and germline exomes


Omics patient data are analyzed using sequences or diff objects of tumor and matched normal tissue to identify patient and disease specific mutations, using transcriptomic data to identify expression levels of the mutated genes, and pathway analysis based on the so obtained omic data to identify specific pathway characteristics for the diseased tissue. Most notably, many different tumors have shared pathway characteristics, and identification of a pathway characteristic of a tumor may thus indicate effective treatment options ordinarily not considered when tumor analysis is based on anatomical tumor type only..
Five3 Genomics, Llc


01/28/16
20160025914 

Dielectric metasurface optical elements


A dielectric gradient metasurface optical device provides optical wavefront shaping using an ultrathin (less than 100 nm thick) layer of nanoscale geometric pancharatnam-berry phase optical elements deposited on a substrate layer. The optical elements are nanobeams composed of high refractive index dielectric material.
The Board Of Trustees Of The Leland Stanford Junior University


01/28/16
20160024687 

Confined lateral growth of crystalline germanium material


There is provided a substrate with a lower growth confinement layer disposed thereon. An upper growth confinement layer is disposed above and vertically separated from the lower growth confinement layer.
Massachusetts Institute Of Technology


01/28/16
20160024588 

Osteosarcoma-associated risk markers and uses thereof


Provided herein are methods and compositions for identifying subjects, including canine subjects, as having an elevated risk of developing cancer or having an undiagnosed osteosarcoma. These subjects are identified based on the presence of germ-line risk markers..
President And Fellows Of Harvard College


01/28/16
20160024527 

Compositions and methods for enhancing bioenergetic status in female germ cells


Compositions and methods comprising bioenergetic agents for restoring the quality of aged oocytes, enhancing oogonial stem cells or improving derivatives thereof (e.g., cytoplasm or isolated mitochondria) for use in fertility-enhancing procedures, are described.. .
President And Fellows Of Harvard College


01/28/16
20160023988 

Fluorescent probe


A compound represented by the formula (i) (r1 represents hydrogen atom or a monovalent substituent; r2 and r3 represent hydrogen atom, an alkyl group, or a halogen atom; r4 and r5 represent an alkyl group or an aryl group; r6 and r7 represent hydrogen atom, an alkyl group, or a halogen atom; r8 represent hydroxy group or a dialkoxyboranetriyl group; and x represents silicon atom, germanium atom, or tin atom), which is a novel fluorophore usable as a mother nucleus of an off/on type fluorescent probe not utilizing the intramolecular photoinduced electron transfer.. .
The University Of Tokyo


01/28/16
20160023309 

Lead-free and antimony-free tin solder reliable at high temperatures


A lead-free, antimony-free tin solder which is reliable at high temperatures and comprises from 3.5 to 4.5 wt. % of silver, 2.5 to 4 wt.
Alpha Metals, Inc.


01/28/16
20160022849 

Ultraviolet disinfecting device for food and beverage dispensers


Disinfecting devices and related methods are provided that apply germicidal ultraviolet light to disinfect dispensing components of food and beverage dispensers. A disinfecting holster for a nozzle of a beverage dispensing handle includes a housing adapted to receive a nozzle of a beverage dispensing handle and an ultraviolet light source bent around the housing to surround at least a portion of the housing.
Automatic Bar Controls, Inc.


01/28/16
20160021899 

Bran and germ flavor and texture improvement


The flavor and texture of a ground bran and germ component or fraction is improved by subjecting the ground bran and germ component to heating while conveying and mixing the ground bran and germ component in a conveying and mixing device. The heating may be conducted to heat the bran and germ component or fraction to a temperature of from about 285° f.
Intercontinental Great Brands Llc


01/28/16
20160021841 

Methods to identify soybean aphid resistant quantitative trait loci in soybean and compositions thereof


The present invention is in the field of plant breeding and aphid resistance. More specifically, the invention includes a method for breeding soybean plants containing quantitative trait loci that are associated with resistance to aphids, aphis glycines.
University Of Georgia Research Foundation, Inc.


01/21/16
20160020154 

Simplified multi-threshold voltage scheme for fully depleted soi mosfets


A method for semiconductor fabrication includes providing channel regions on a substrate including at least one silicon germanium (sige) channel region, the substrate including a plurality of regions including a first region and a second region. Gate structures are formed for a first n-type field effect transistor (nfet) and a first p-type field effect transistor (pfet) in the first region and a second nfet and a second pfet in the second region, the gate structure for the first pfet being formed on the sige channel region.
Globalfoundries Inc.


01/21/16
20160019820 

Decorative and protective molded label


A decorative molded foam or molded gel protective label configured to partially or entirely encase glass or fragile plastic container. The molded label may be film coated on an exterior facing surface for improved feel.
Pwe, Llc


01/21/16
20160016496 

Sanitized protective seat cover kit with disinfecting agent


The protective seat cover kit is a specially fabricated sanitary and protective seat covering comprising a back section, a seat section, left and right wings, and a pouch containing a sani-pac. The sani-pac contains fumigant particles secured in place by a fine mesh overlaid by an airtight flap.

01/21/16
20160015844 

Sanitizing floor mat


A sanitizing floor mat for sanitizing a user's shoes when the user steps thereon in order to prevent the spread of germs and bacteria on the user's shoes. The sanitizing floor mat includes a body that is substantially planar so that it can be placed flush on the floor, wherein the mat is preferably placed in the threshold of a doorway.

01/21/16
20160015157 

Compositions and methods for arrangement of survival materials


A survival kit to include a specially designed and arranged backpack with emergency contents is disclosed. The backpack is configured with a plurality of compartments wherein a hydration bladder having a tube for accessing water therein is provided in the first compartment.

01/21/16
20160015055 

Process for preparing fermented soybean meal


An improved method for producing fermented soybean meal which performs fermentation process and drying process separately in the production of the fermented soybean meal. The method for preparing fermented soybean meal enables prevention of contamination by various germs while shortening the time required for its preparation compared to the conventional method.
Cj Cheiljedang Corporation


01/14/16
20160013336 

Compound-semiconductor photovoltaic cell and manufacturing compound-semiconductor photovoltaic cell


A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell, which includes an absorption layer made of a first compound-semiconductor material which lattice matches with gallium arsenide (gaas) or germanium (ge); and a window layer made of aluminum indium phosphide (alx1in1-x1p (0<x1≦1)), arranged on an incident side of the absorption layer in a light incident direction, having a lattice constant less than a lattice constant of the absorption layer, and having a band gap greater than a band gap of the absorption layer.. .
Ricoh Company, Ltd.


01/14/16
20160013308 

Finfet device with gate oxide layer


The present disclosure provides a semiconductor structure. In accordance with some embodiments, the semiconductor structure includes a substrate, one or more fins each including a first semiconductor layer formed over the substrate, an oxide layer formed wrapping over an upper portion of each of the one or more fins, and a gate stack including a high-k (hk) dielectric layer and a metal gate (mg) electrode formed wrapping over the oxide layer.
Taiwan Semiconductor Manufacturing Company, Ltd.


01/14/16
20160013283 

Method for manufacturing gate stack structure in insta-metal-oxide-semiconductor field-effect-transistor


A method for manufacturing a metal-oxide-semiconductor (mos) gate stack structure in an insta-mos field-effect-transistor (i-mosfet) includes the following steps of: forming a silicon nitride layer over a silicon substrate; forming a nanopillar structure including a silicon-germanium alloy layer in contact with the silicon nitride layer; and performing a thermal oxidation process on the nanopillar structure to cause germanium atoms in the silicon-germanium alloy layer to penetrate the underneath silicon nitride layer to form a silicon-germanium shell layer in contact with the silicon substrate and a germanium nanosphere located over the silicon germanium shell layer, and to form a separating layer between the silicon-germanium shell layer and the germanium nanosphere by oxidizing silicon atoms from the silicon nitride layer or the silicon substrate, thereby forming a germanium/silicon dioxide/silicon-germanium i-mos gate stack structure capable of solving interfacial issues between silicon and germanium and between germanium and the gate dielectric.. .
National Central University


01/14/16
20160013189 

Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures


A method of forming a semiconductor device that includes forming an at least partially relaxed semiconductor material, and forming a plurality of fin trenches in the partially relaxed semiconductor material. At least a portion of the plurality of fin trenches is filled with a first strained semiconductor material that is formed using epitaxial deposition.
International Business Machines Corporation


01/14/16
20160013066 

Chemical mechanical polishing (cmp) composition


Use of a chemical mechanical polishing (cmp) composition (q) for chemical mechanical polishing of a substrate (s) comprising (i) elemental germanium or (ii) si1-xgex with 0.1≦x<1, wherein the cmp composition (q) consists essentially of (a) aluminum particles in an amount of from 0.01 to 3 wt. % based on the total weight of the cmp composition (b) at least one oxidizer, (m) an aqueous medium and (n) optionally at least one ph adjusting agent wherein the cmp composition (q) has a ph of from 2 to 6..
Basf Se


01/14/16
20160013048 

Gas phase oxide removal and passivation of germanium-containing semiconductors and compound semiconductors


A method for gas phase oxide removal and passivation of germanium-containing semiconductors and compound semiconductors are disclosed in various embodiments. According to one embodiment of the invention, a method is provided for processing a semiconductor substrate.
Tokyo Electron Limited


01/14/16
20160010056 

Method of inducing differentiation from pluripotent stem cells to germ cells


This invention provides a method of producing a primordial germ cell-like cell (pgclc) from an epiblast isolated from an embryo or an epiblast-like cell (epilc) induced from a pluripotent stem cell (psc), which comprises allowing the epiblast or epilc to express exogenous transcription factor(s) selected from the group consisting of: (i) blimp1, prdm14 and tfap2c; (ii) blimp1 and prdm14; (iii) blimp1 and tfap2c; (iv) prdm14 and tfap2c; and (v) prdm14; thereby inducing the epiblast or epilc into a pgc state without acquiring transient mesodermal program.. .
Kyoto University


01/14/16
20160009753 

Reducing risk of contracting clostridium-difficile associated disease


A method of treating a patient to reduce risk of developing clostridium difficile-associated disease or reducing existing clostridium difficile-associated disease in a mammalian subject involves administering to a mammalian subject an effective amount of a germination-inhibiting compound derived from taurocholate. Novel compounds of this class are also provided..
The Board Of Regents Of The Nevada System Of Higher Education On Behalf Of The University Of


01/14/16
20160007613 

Clonostachys rosea inoculated plant materials with fungicides and adjuvants


Clonostachys rosea strains have novel usefulness as inoculants of plants promoting plant vigor, health, growth, yield and a reduction of competitive stress caused by other fungi when used alone or sequentially with many fungicides in an integrated pest management system (ipm). Seed and foliar uses are shown to inoculate and subsequently achieve endophytic colonization of the portion of the plant treated.
Adjuvants Plus Usa, Inc.


01/07/16
20160005852 

Semiconductor devices having lower and upper fins and fabricating the same


Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (ge) is included in a portion of the oxide film located between the lower fin and the upper fin..

01/07/16
20160005831 

Field effect transistors having multiple effective work functions


Selective deposition of a silicon-germanium surface layer on semiconductor surfaces can be employed to provide two types of channel regions for field effect transistors. Anneal of an adjustment oxide material on a stack of a silicon-based gate dielectric and a high dielectric constant (high-k) gate dielectric can be employed to form an interfacial adjustment oxide layer contacting a subset of channel regions.
International Business Machines Corporation


01/07/16
20160005813 

Fin structures and methods of manfacturing the fin structures, and fin transistors having the fin structures and methods of manufacturing the fin transistors


Fin structures and methods of forming the fin structure are provided. Fin structures may include a semiconductor fin that is on a silicon layer and includes a group iv semiconductor material that includes germanium, an isolation insulation layer at two lower sides of the semiconductor fin and a bottom insulation layer under the semiconductor fin and the isolation insulation layer.

01/07/16
20160005734 

Integrated circuit product comprised of multiple p-type semiconductor devices with different threshold voltages


Disclosed is an integrated circuit product comprised of a semiconductor substrate with a first pmos active region and a second pmos active region, of which only the second pmos active region has a silicon germanium layer formed thereon, a first pmos device formed in and above the first pmos active region, the first pmos device having a first gate structure, and a second pmos device formed in and above the second pmos active region, the second pmos device having a second gate structure disposed on the silicon germanium layer.. .
Globalfoundries Inc.


01/07/16
20160005656 

Fin spacer protected source and drain regions in finfets


A method includes forming shallow trench isolation (sti) regions in a semiconductor substrate and a semiconductor strip between the sti regions. The method also include replacing a top portion of the semiconductor strip with a first semiconductor layer and a second semiconductor layer over the first semiconductor layer.
Taiwan Semiconductor Manufacturing Company, Ltd.


01/07/16
20160004756 

Interface including graphic representation of relationships between search results


A multi-dimensional graphic user interface displays selected types of information regarding items included in one or more databases or returned by a search in accordance with locations on a two-dimensional display area or projection of a three-dimensional space on a two-dimensional area and provides for selective display of information about respective items in a database (e.g. Metadata) as additional dimensions of the display which may be suppressed and/or selectively introduced to avoid user distraction or obscuring information or for comparison between screens which may indicate to a user the degree to which a particular item may or may not be germane to an issue or particular subject matter of interest.
Fastcase, Inc.


01/07/16
20160003844 

Screening and engineering super-stable immunoglobulin variable domains and their uses


There are provided a method named tat-associated protein engineering (tape), of screening a target protein having higher solubility and excellent thermostability, in particular, an immunoglobulin variable domain (vh or vl) derived from human germ cells, by preparing a gene construct where the target protein and an antibiotic-resistant protein are linked to a tat signal sequence, and then expressing this within e. Coli, and human or engineered vh and vl domain antibodies and human or engineered vh and vl domain antibody scaffolds having solubility and excellent thermostability, which are screened by the tape method.
Mogam Biotechnology Research Institute


01/07/16
20160002577 

Beverage and method relating to same


Provided are a beverage having an effectively improved flavor, and methods for the same. A method of producing a beverage according to the present invention is a method of producing a beverage using a raw material solution, the method including: washing barley without germinating the barley; discarding a wash solution after the washing of the barley; and preparing the raw material solution using a raw material containing the washed and ungerminated barley..
Sapporo Breweries Limited


01/07/16
20160002161 

Plant growth regulating compounds


The present invention relates to novel strigolactam derivatives, to processes and intermediates for preparing them, to plant growth regulator compositions comprising them and to methods of using them for controlling the growth of plants and/or promoting the germination of seeds.. .
Syngenta Participations Ag


01/07/16
20160002029 

Method of fabrication of ai/ge bonding in a wafer packaging environment and a product produced therefrom


A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry cmos process.
Invensense, Inc.


01/07/16
20160000032 

Zoysia japonica steud gin gi


A turfgrass variety, gin gi, characterized in that the plant length is 1-3 cm, leaf sheath length is 0.5-1.2 cm, leaf sheath color is rhs green group 134a, leaf blade length is 1-3 cm, leaf blade color is rhs green group 141a, and length of root grown from underground stolon is 30-50 cm, in which the leaf sheath and leaf blade have no trichome, green color is maintained until early december, intense propagation occurs without showing any symptom of diseases even under two irrigations per day during summer months due to high humidity resistance, main propagation is based on vegetative propagation of stolon or underground stolon, and propagation is also possible by seed germination. Due to an excellent mat-forming property, it can be used for an area in which covering or greening is required..
Zoysia Gingi Limited Liability Company


01/07/16
20160000002 

Memorial flower planting product made with or without human or pet cremated remains


A process for creating a shaped seed wafer is described. Ingredients for a growth medium are selected and mixed together.
Cherished Ones, Llc


12/31/15
20150380559 

Germanium-containing finfet and methods for forming the same


A method includes forming isolation regions in a semiconductor substrate, forming a first semiconductor strip between opposite portions of isolation regions, forming a second semiconductor strip overlying and contacting the first semiconductor strip, and performing a first recessing to recess the isolation regions. A portion of the second semiconductor strip over top surfaces of remaining portions of the isolation regions forms a semiconductor fin.
Taiwan Semiconductor Manufacturing Company, Ltd.


12/31/15
20150380509 

Improved formation of silicide contacts in semiconductor devices


Methods of forming silicide contacts in semiconductor devices are presented. An exemplary method comprises providing a semiconductor substrate having an n-type field effect transistor (nfet) region and on a p-type field effect transistor (pfet) region; performing a pre-amorphized implantation (pai) process to an n-type doped silicon (si) feature in on the nfet region and a p-type doped silicon germanium (sige) feature in the pfet region, thereby forming an n-type amorphous silicon (a-si) feature and a p-type amorphous silicon germanium (a-sige) feature; depositing a metal layer over each of the a-si and a-sige features; performing an annealing process on the semiconductor device with a temperature ramp-up rate tuned according to a silicide growth rate difference between the n-type a-si and the p-type a-sige features.
Taiwan Semiconductor Manufacturing Company, Ltd.


12/31/15
20150380410 

Structure and sram finfet device


The present disclosure provides an embodiment of a fin-like field-effect transistor (finfet) device. The device includes a first fin structure disposed over an n-type finfet (nfet) region of a substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.


12/31/15
20150380409 

Threshold voltage control for mixed-type non-planar semiconductor devices


A range of lowest, low and regular threshold voltages are provided to three p-type devices and three n-type devices co-fabricated on a same substrate. For the p-type devices, the range is achieved for the lowest using an additional thick layer of a p-type work function metal in a gate structure and oxidizing it, the low vt is achieved with the thick p-type work function metal alone, and the regular vt is achieved with a thinner layer of the p-type work function metal.
Globalfoundries Inc.


12/31/15
20150380309 

Metal-insulator-semiconductor (mis) contact with controlled defect density


Metal-insulator-semiconductor (mis) contacts for germanium and its alloys include insulator layers of oxygen-deficient metal oxide deposited by atomic layer deposition (ald). The oxygen deficiency reduces the tunnel barrier resistance of the insulator layer while maintaining the layer's ability to prevent fermi-level pinning at the metal/semiconductor interface.
Globalfoundries, Inc.




Germ topics: Semiconductor, Transistors, Semiconductor Material, Ion Source, Optical Fiber, Photodiode, Electrical Signal, Level Shift, Source Follower, Transimpedance Amplifier, Movable Barrier, Prophylactic, Immunoglobulin, Immunoglobulins, Evaporator

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