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This page is updated frequently with new Germ-related patent applications. Subscribe to the Germ RSS feed to automatically get the update: related Germ RSS feeds. RSS updates for this page: Germ RSS RSS


Electrically isolated sige fin formation by local oxidation

International Business Machines

Electrically isolated sige fin formation by local oxidation

Electrically isolated sige fin formation by local oxidation

International Business Machines

Base profile of self-aligned bipolar transistors for power amplifier applications

Date/App# patent app List of recent Germ-related patents
04/23/15
20150111213
 Rad51c as a human cancer susceptibility gene patent thumbnailRad51c as a human cancer susceptibility gene
The invention discloses in vitro methods and a system for determining a predisposition of a subject for developing a cancer on the basis of analyzing a sample of the subject for an alteration of at least one allele of the rad51c gene. Further disclosed are in vitro methods for assessing clinical features or a pathological progression of a cancer and for assessing at least one rad51 c gene alteration in a cell.
Heinrich- Heine-universitÄt DÜsseldorf
04/23/15
20150110958
 Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films patent thumbnailGermanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films
Wherein each r1, r2, r3, r4, r5, r6, r7, r8, r9 and r10 is independently selected from h; a c1-c5 linear, branched, or cyclic alkyl group; and a c1-c5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit zirconium-containing films on substrates via vapor deposition processes..
04/23/15
20150108572
 Electrically isolated sige fin formation by local oxidation patent thumbnailElectrically isolated sige fin formation by local oxidation
A silicon germanium alloy layer is formed on a semiconductor material layer by epitaxy. An oxygen impermeable layer is formed on the silicon germanium alloy layer.
International Business Machines Corporation
04/23/15
20150108548
 Base profile of self-aligned bipolar transistors for power amplifier applications patent thumbnailBase profile of self-aligned bipolar transistors for power amplifier applications
According to a bipolar transistor structure having a transistor top and a transistor bottom herein, a silicon substrate located at the transistor bottom has a collector region of a first conductivity type. An epitaxial base layer of a second conductivity type overlies, relative to the transistor top and bottom, a portion of the collector region.
International Business Machines Corporation
04/23/15
20150108546
 Method for improving transistor performance through reducing the salicide interface resistance patent thumbnailMethod for improving transistor performance through reducing the salicide interface resistance
An embodiment of the invention reduces the external resistance of a transistor by utilizing a silicon germanium alloy for the source and drain regions and a nickel silicon germanium self-aligned silicide (i.e., salicide) layer to form the contact surface of the source and drain regions. The interface of the silicon germanium and the nickel silicon germanium silicide has a lower specific contact resistivity based on a decreased metal-semiconductor work function between the silicon germanium and the silicide and the increased carrier mobility in silicon germanium versus silicon.
Lntel Corporation
04/23/15
20150108544
 Fin spacer protected source and drain regions in finfets patent thumbnailFin spacer protected source and drain regions in finfets
An integrated circuit device includes a semiconductor substrate, insulation regions extending into the semiconductor substrate, and a semiconductor fin protruding above the insulation regions. The insulation regions include a first portion and a second portion, with the first portion and second portion on opposite sides of the semiconductor fin.
Taiwan Semiconductor Manufacturing Company, Ltd.
04/23/15
20150107862
 Furrow closing system and method patent thumbnailFurrow closing system and method
Agricultural planter row units feature soil finishing assemblies for closing a seed groove after seed is placed in the soil. An adjustable furrow closing assembly enhances upper seed groove coverage and closure with soil resulting in sustained relative humidity levels and optimum seed-to-soil contact for faster seed germination.
04/16/15
20150106975
 Molecular markers associated with aphid resistance in soybean patent thumbnailMolecular markers associated with aphid resistance in soybean
The present invention provides methods and compositions for the identification and selection of loci modulating phenotypic expression of an aphid resistance trait in plant breeding. In addition, methods are provided for screening germplasm entries for the performance and expression of this trait..
Monsanto Technology Llc
04/16/15
20150104914
 Semiconductor process patent thumbnailSemiconductor process
A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate.
United Microelectronics Corp.
04/16/15
20150102385
 Hybrid silicon germanium substrate for device fabrication patent thumbnailHybrid silicon germanium substrate for device fabrication
Systems and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first buffer layer, a second buffer layer, a n-type transistor structure, and a p-type transistor structure.
Taiwan Semiconductor Manufacturing Company Limited
04/16/15
20150102257

Sub-stoichiometric, chalcogen-containing-germanium, tin, or lead anodes for lithium or sodium ion batteries


The disclosure relates to an anode or an electrolytic capacitor electrode including an active anode material containing a chalcogen-containing-germanium composition in which the germanium:chalcogen atom ratio is between 80:20 and 98:2. The disclosure also relates to an anode including an active anode material containing a lithium and germanium-containing alloy wherein the lithium:germanium atom ratio is 22:5 or less.
04/09/15
20150101073

Methods and compositions for peronospora resistance in spinach


The present disclosure provides for unique spinach plants with broad-spectrum resistance to downy mildew and their progeny. Such plants may comprise an introgressed qtl associated with the broad-spectrum resistance to downy mildew.
Seminis Vegetable Seeds, Inc.
04/09/15
20150099648

Soybean transformation method


The present disclosure relates in part to a method for identifying a soybean germline transformant from a population of soybean transformants by incorporating a selection agent within rooting medium used in tissue culture during the soybean transformation process. The soybean germline transformants are selected from a population of soybean transformants which are comprised of a combination of non-germline and germline soybean transformants.
Dow Agrosciences Llc
04/09/15
20150099629

Chitooligosaccharides and methods for use in enhancing soybean growth


Disclosed are methods of enhancing growth of soybean plants, comprising treating soybean seed or the soybean plant that germinates from the seed with an effective amount of at least one chitooligosaccharide, wherein upon harvesting the soybean plant exhibits at least one of increased plant yield measured in terms of bushels/acre, increased root number, increased root length, increased root mass, increased root volume and increased leaf area, compared to untreated soybean plants or soybean plants harvested from untreated soybean seed.. .
Novozymes Bioag A/s
04/09/15
20150099349

Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications


A method to provide a transistor or memory cell structure. The method comprises: providing a substrate including a lower si substrate and an insulating layer on the substrate; providing a first projection extending above the insulating layer, the first projection including an si material and a si1−xgex material; and exposing the first projection to preferential oxidation to yield a second projection including a center region comprising ge/si1−ygey and a covering region comprising sio2 and enclosing the center region..
Intel Corporation
04/09/15
20150099106

Polycarbonate resin composition with superior fluidity and molding thereof


A resin composition including 40 parts by weight or more and less than 95 parts by weight of a polycarbonate resin and 5 parts by weight or more and less than 60 parts by weight of a polyester-polyether copolymer as a base resin, wherein the polyester-polyether copolymer is a copolymer which is obtained by a polymerization using a germanium compound catalyst, includes aromatic polyester units and modified polyether units represented by the following general formula 1, and has an iv value within a range of 0.30 to 1.00 can be well-balanced in moldability, heat resistance, impact resistance, and low linear expansion property, without deteriorating a surface appearance of a molding obtained therefrom.. .
Kaneka Corporation
04/09/15
20150097270

Finfet with relaxed silicon-germanium fins


A method of forming a semiconductor structure includes forming a first fin in a p-fet device region of a semiconductor substrate and a second fin in an n-fet device region of the semiconductor substrate substantially parallel to the first fin. The first fin and the second fin each comprise a strained semiconductor material.
International Business Machines Corporation
04/09/15
20150097217

Semiconductor attenuated fins


A semiconductor device includes a semiconductor substrate and attenuated semiconductor fins (e.g. Finfet fins) that include an outer portion that is a composite of a first material and a second material, an inner portion that is the second material, and an attenuation portion that is an attenuated composite of the first and second materials.
International Business Machines Corporation
04/09/15
20150096265

Apparatus for automatically adhering seeds to biodegradable mulching film having anti-blocking function and adhering seeds by using same


The present invention relates to an apparatus for automatically adhering seeds (hereinafter “seeds” shall refer to pre-germination seed rice when adhered to the mulching film, and to seeds which have germinated and divided after being planted and growing deeper roots in a rice paddy) to a biodegradable mulching film having an anti-blocking function, and to a method for adhering the seeds by using the apparatus. More specifically, the present invention relates to the apparatus for automatically adhering the seeds, which forms by means of a cutting means or a punching means through-holes or germination gaps on the mulching film on which germination holes have not been punched, can process adhesive coating and seed adhering in an accurate, swift, and automatic manner, and which is provided with a releasing agent so as to coat the releasing agent after coating the adhesive, thereby preventing blocking due to overlapping of the mulching film when winding same..
04/02/15
20150094255

Lectin conjugates for mucin hydration


The invention provides, inter alia, conjugates of a hydratable polymer (such as peg, polyethylene glycol) and a lectin (such as wheat germ agglutinin, wga), compositions comprising these conjugates, as well as methods and targeted uses of these conjugates and compositions for, e.g., lubricating, maintaining hydration of rehydrating, and/or inhibiting microorganism colonization of a biological surface in need thereof.. .
Massachusetts Institute Of Technology
04/02/15
20150093914

Methods for depositing an aluminum oxide layer over germanium susbtrates in the fabrication of integrated circuits


Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate comprising a geox layer formed thereon and exposing the semiconductor substrate to first and second atomic layer deposition (ald) processes.
Globalfoundries, Inc.
04/02/15
20150093890

Cobalt metal precursors


A metal precursor and a method comprising decomposing a metal precursor on an integrated circuit device; and forming a metal from the metal precursor, wherein the metal precursor is selected from the group consisting of (i) a co2(co)6(r1c≡cr2), wherein r1 and r2 are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms that may be interrupted and substituted; (ii) a mononuclear cobalt carbonyl nitrosyl; (iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety; (iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and (v) a cobalt (ii) complex comprising nitrogen-based supporting ligands.. .
04/02/15
20150093889

Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuits


Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate comprising a geox layer formed thereon having a first thickness, removing a portion of the geox layer by exposing the semiconductor substrate to a hydrogen-plasma dry etch so as to reduce the first thickness of the geox layer to a second thickness, and depositing a high-k material over the geox layer of the semiconductor substrate..
Globalfoundries, Inc.
04/02/15
20150093887

Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuitsi


Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate including a geox layer formed thereon having a first thickness, removing a portion of the geox layer by exposing the semiconductor substrate to a nf3/nh3 plasma dry etch so as to reduce the first thickness of the geox layer to a second thickness, and depositing a high-k material over the geox layer of the semiconductor substrate..
Globalfoundries, Inc.
04/02/15
20150093868

Integrated circuit devices including finfets and methods of forming the same


Integrated circuit devices including fin field-effect transistors (finfets) and methods of forming the same are provided. The methods may include forming a fin-shaped channel region including germanium on a substrate and forming a source/drain region adjacent the channel region on the substrate.
04/02/15
20150093653

Additive for lithium ion rechargeable battery cells


A lithium ion rechargeable battery cell includes an anode having electroactive material-containing particles wherein the electroactive material is selective from one or more of silicon, germanium, and tin. A cathode includes an active material adapted to incorporate lithium and also to liberate lithium electrochemically.
Nexeon Ltd.
04/02/15
20150093360

Compositions and methods


Disclosed herein are therapeutic compositions containing non-pathogenic, germination-competent bacterial spores, for the prevention, control, and treatment of gastrointestinal diseases, disorders and conditions and for general nutritional health.. .
Seres Health, Inc.
04/02/15
20150091099

Finfets with gradient germanium-containing channels


A method includes forming a semiconductor fin, forming a dummy gate on a top surface and sidewalls of the semiconductor fin, and removing the dummy gate to form a recess. The semiconductor fin is exposed to the recess.
Taiwan Semiconductor Manufacturing Company, Ltd.
04/02/15
20150090903

Uv germicidal system, method, and device thereof


A germicidal system for use in disinfecting a human interface device includes at least one human interface device. One or more ultra-violet (uv) light sources are used in proximity to the at least one human interface device for disinfecting a touch surface of the human interface device below a surgical grade sterilization.
Uv Partners Llc
04/02/15
20150090121

Humidifier with ultraviolet disinfection


A humidifier for treating humidified air with germicidal light is provided. The humidifier includes a water reservoir, an atomizer to atomize a supply of water, and an ultraviolet light source to expose the atomized water to germicidal light.
Access Business Group International Llc
03/26/15
20150089686

Plant germplasm resistant to rna viruses


Disclosed is a dsrna construct used to silencing specific eukaryotic translation initiation factor in plants to produce a plant resistant to viruses such as potyviruses, luteoviruses, and furoviruses. More specifically, the plant would be resistant to viruses such as wheat streak mosaic virus, triticum mosaic virus, soil bourne mosaic virus, or barley yellow dwarf virus.
Kansas State University Research Foundation
03/26/15
20150087841

Synthesis of mse-framework type molecular sieves


A method of synthesizing a crystalline molecular sieve having an mse framework type comprises crystallizing a reaction mixture comprising a source of water, a source of an oxide of a tetravalent element, y, selected from at least one of silicon, tin, titanium, vanadium, and germanium, optionally a source of a trivalent element, x, a source of an alkali or alkaline earth metal, m, and a source of organic dications, q, such as 3-hydroxy-1-(4-(1-methylpiperidin-1-ium-1-yl)butyl)quinuclidin-1-ium, 3-hydroxy-1-(5-(1-methylpiperidin-1-ium-1-yl)pentyl)quinuclidin-1-ium, 1,1′-(butane-1,4-diyl)bis(1-methylpiperidin-1-ium), 1,1′-(pentane-1,5-diyl)bis(1-methylpiperidin-1-ium), 1,1′-(hexane-1,6-diyl)bis(1-methylpiperidin-1-ium), and 1,1′-((3as,6as)-octahydropentalene-2,5-diyl)bis(1-methylpiperidin-1-ium).. .
Exxonmobil Research And Engineering Company
03/26/15
20150087610

Method of modifying fertility


The present invention provides methods and compositions for modifying fertility in a male mammalian subject by contacting the subject's testis cells, germ cells or sperm with a sufficient amount of a composition comprising a ligand that binds, activates, or inhibits activation of, a tas2r receptor expressed on the cells. Also described are methods for screening a test molecule for its effect on fertility by examining changes in male germ cells, testis cells or sperm resulting from contact with a molecule that binds, activates, or inhibits activation of, a tas2r receptor expressed on the cells.
Monell Chemcial Senses Center
03/26/15
20150087508

Plant growth regulating compounds


The present invention relates to novel strigolactam derivatives, to processes and intermediates for preparing them, to plant growth regulator compositions comprising them and to methods of using them for controlling the growth of plants and/or promoting the germination of seeds.. .
Syngenta Participations Ag
03/26/15
20150086879

Anode and manufacturing the same, and battery and manufacturing the same


An anode in which an anode active material layer is arranged on an anode current collector. The anode active material layer includes anode active material particles made of an anode active material including at least one of silicon and tin as an element.
Sony Corporation
03/26/15
20150085353

Optical system for an infrared ray


An object of the present invention is to provide an optical system for an infrared ray which can provide a bright image, and can be applied to fixed focal length lenses among wide-angle to medium-telephoto. To achieve the object, the optical system for an infrared ray is constituted by a first lens having negative refractive power and a second lens having positive refractive power, these are arranged sequentially from an object side, wherein both the first lens and the second lens are made of an infrared transmitting material that transmits a light beam in an infrared wavelength range of 3 micron-meters or more to 14 micron-meters or less, and at least one of the lenses is made of an infrared transmitting material excluding germanium..
Tamron Co., Ltd.
03/19/15
20150082469

Humanized il-7 rodents


Genetically modified non-human animals comprising a human or humanized interleukin-7 (il-7) gene. Cells, embryos, and non-human animals comprising a human or humanized il-7 gene.
Regeneron Pharmaceuticals, Inc.
03/19/15
20150079767

Semiconductor device having buried bit lines and fabricating the same


A semiconductor device includes semiconductor bodies formed substantially perpendicular to a semiconductor substrate, buried bit lines formed in the semiconductor bodies and including a metal silicide; and barrier layers formed under and over the buried bit lines and containing germanium.. .
Sk Hynix Inc.
03/19/15
20150079230

Method for increasing yield in the malting process


Processes for increasing yield in the malting process are described. Utilization of an extract in the germination stage of the malting process can result in an increased malt yield without substantially affecting the quality of the resulting malt..
Cargill, Incorporated
03/19/15
20150079200

Systems and methods for generating germicidal compositions


The present invention relates to systems and methods for generating germicidal compositions for use in a wide variety of settings, including agricultural settings (e.g., animal bedding), food production settings, hospitality settings, health care settings, health club settings, exercise facility settings, research based settings, veterinarian settings, medical settings, hydraulic fracturing settings, and/or any setting requiring disinfection.. .
Zurex Pharmagra, Llc
03/19/15
20150076561

Silicon-on-nothing finfets


A semiconductor device includes an insulator formed within a void to electrically isolate a fin from an underlying substrate. The void is created by removing a doped sacrificial layer formed between the substrate and a fin layer.
International Business Machines Corporation
03/19/15
20150076559

Integrated circuits with strained silicon and methods for fabricating such circuits


Integrated circuits with strained silicon and methods for fabricating such integrated circuits are provided. An integrated circuit includes a stack with a surface layer, an intermediate layer, and a base layer, where the surface layer overlies the intermediate layer, and the intermediate layer overlies the base layer.
Globalfoundries, Inc.
03/19/15
20150076558

Semiconductor structure and the manufacturing method thereof


The present disclosure provides a finfet. The finfet includes a silicon-on-insulator (soi) with an insulator; a plurality of fin structures on the insulator; an isolation on the insulator, and between two adjacent fin structures in the plurality of fin structures; and an oxide layer between each of the plurality of fin structures and the insulator, wherein the insulator comprises silicon germanium oxide.
Taiwan Semiconductor Manufacturing Company Ltd.
03/19/15
20150076369

Footwear sanitizing and deodorizing system


Introducing ultraviolet (uv) light to activate a light sensitive chemical compound applied to interior portions of footwear alters the environment inside a shoe or other footwear to destroy microorganisms or inhibit their growth. Visible light can also be used to prevent further microorganism growth.
Shoe Care Innovations, Inc.


Popular terms: [SEARCH]

Germ topics: Semiconductor, Transistors, Semiconductor Material, Ion Source, Optical Fiber, Photodiode, Electrical Signal, Level Shift, Source Follower, Transimpedance Amplifier, Movable Barrier, Prophylactic, Immunoglobulin, Immunoglobulins, Evaporator

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This listing is a sample listing of patent applications related to Germ for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Germ with additional patents listed. Browse our RSS directory or Search for other possible listings.
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