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This page is updated frequently with new Germ-related patent applications. Subscribe to the Germ RSS feed to automatically get the update: related Germ RSS feeds. RSS updates for this page: Germ RSS RSS


Selective etching of titanium nitride

Selective etching of titanium nitride

Method for forming components on a silicon-germanium layer

Method for forming components on a silicon-germanium layer

Method for forming components on a silicon-germanium layer

Depletion-mode field-effect transistor-based phototransistor

Date/App# patent app List of recent Germ-related patents
12/11/14
20140366214
 Molecular markers associated with soybean tolerance to low iron growth conditions patent thumbnailMolecular markers associated with soybean tolerance to low iron growth conditions
The present invention provides methods and compositions for identifying soybean plants that are tolerant or have improved tolerance, or those that are susceptible to, iron deficient growth conditions. The methods use molecular markers to identify, select, and/or introgress genetic loci modulating phenotypic expression of an iron deficiency tolerance trait in soybean plant breeding.
12/11/14
20140363981
 Selective etching of titanium nitride patent thumbnailSelective etching of titanium nitride
Provided are methods for processing semiconductor substrates having titanium nitride (tin) structures as well as aluminum (al) structures and, in some embodiments, other structures, such as silicon germanium (sige), tantalum nitride (tan), hafnium oxide (hfox), silicon nitride (sin), and/or silicon oxide (sio2) structures. Etching solutions and processing conditions described herein provide high etching selectivity of titanium nitride relative to these other materials.
12/11/14
20140363953
 Method for forming components on a silicon-germanium layer patent thumbnailMethod for forming components on a silicon-germanium layer
A method for manufacturing components on an soi layer coated with a silicon-germanium layer formed by epitaxial deposition, wherein the heat balance of the anneals performed after the epitaxial deposition is such that the germanium concentration remains higher in the silicon-germanium layer than in the soi layer.. .
12/11/14
20140363917
 Depletion-mode field-effect transistor-based phototransistor patent thumbnailDepletion-mode field-effect transistor-based phototransistor
A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel.
12/11/14
20140363467
 Avian induced pluripotent stem cells and their use patent thumbnailAvian induced pluripotent stem cells and their use
The present invention relates to the production of avian induced pluripotent stem cells from non-pluripotent somatic cells, including embryonic fibroblasts and adult somatic cells. In this method, avian (including quail or chicken) somatic cells are reprogrammed into a state closely resembling embryonic stem cells including the expression of key stem cell markers alkaline phosphatase, etc.
12/11/14
20140361435
 Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device patent thumbnailMethods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device
One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier layer in the trench/via, forming a copper-based seed layer on the barrier layer, converting at least a portion of the copper-based seed layer into a copper-based nitride layer, depositing a bulk copper-based material on the copper-based nitride layer so as to overfill the trench/via and performing at least one chemical mechanical polishing process to remove excess materials positioned outside of the trench/via to thereby define a copper-based conductive structure. A device disclosed herein includes a layer of insulating material, a copper-based conductive structure positioned in a trench/via within the layer of insulating material and a copper-based silicon or germanium nitride layer positioned between the copper-based conductive structure and the layer of insulating material..
12/11/14
20140361377
 Retrograde doped layer for device isolation patent thumbnailRetrograde doped layer for device isolation
Embodiments herein provide device isolation in a complimentary metal-oxide fin field effect transistor. Specifically, a semiconductor device is formed with a retrograde doped layer over a substrate to minimize a source to drain punch-through leakage.
12/11/14
20140361368
 Reduced resistance sige finfet devices and method of forming same patent thumbnailReduced resistance sige finfet devices and method of forming same
A method for forming a fin field-effect transistor (finfet) device, comprises forming a plurality of silicon fins on a substrate, depositing silicon germanium (sige) on the plurality of fins, forming a gate region by forming a dummy gate stack on a predetermined area of the fins including the sige, removing the sige from an area of the fins not covered by the dummy gate stack, forming a merged region in the area of the fins not covered by the dummy gate stack to form a source drain region, removing the dummy gate stack to expose the remaining sige in the gate region, mixing the sige with the silicon fins in the gate region to form sige fins, and depositing a gate dielectric and gate metal on the sige fins.. .
12/11/14
20140361338
 Reduced resistance sige finfet devices and method of forming same patent thumbnailReduced resistance sige finfet devices and method of forming same
A method for forming a fin field-effect transistor (finfet) device, comprises forming a plurality of silicon fins on a substrate, depositing silicon germanium (sige) on the plurality of fins, forming a gate region by forming a dummy gate stack on a predetermined area of the fins including the sige, removing the sige from an area of the fins not covered by the dummy gate stack, forming a merged region in the area of the fins not covered by the dummy gate stack to form a source drain region, removing the dummy gate stack to expose the remaining sige in the gate region, mixing the sige with the silicon fins in the gate region to form sige fins, and depositing a gate dielectric and gate metal on the sige fins.. .
12/11/14
20140360546
 Silicon-based thermoelectric materials including isoelectronic impurities, thermoelectric devices based on such materials, and methods of making and using same patent thumbnailSilicon-based thermoelectric materials including isoelectronic impurities, thermoelectric devices based on such materials, and methods of making and using same
Silicon-based thermoelectric materials including isoelectronic impurities, thermoelectric devices based on such materials, and methods of making and using same are provided. According to one embodiment, a thermoelectric material includes silicon and one or more isoelectronic impurity atoms selected from the group consisting of carbon, tin, and lead disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of the one or more isoelectronic impurity atoms in the silicon.
12/04/14
20140359897
Method for modulating the number of archesporial cells in a developing anther
Certain embodiments provide a method of altering the number of archesporial cells in a developing anther of a plant in certain embodiments, the method comprises exposing the anther to redox-modulatory conditions prior to differentiation of germline cells in the anther, thereby changing the redox potential of cells in the anther and altering the number of archesporial cells in the anther. This method may be employed to increase or decrease the number of archesporial cells in a developing anther, and may be employed to produce male sterile plants..
12/04/14
20140357728
Pesticides based on vicinal diols
Pesticides based on hydroxy-substituted hydrocarbyl compounds, particularly vicinal diols, are available to control arthropod ectoparasites such as pediculus humanus, dermatophagoides pteronyssinus, musca domestica, the blattidae, blatella germanica, and periplaneta americana, by introducing to the locus of an infestation of the pest, a composition containing as active ingredient a vicinal diol.. .
12/04/14
20140357082
High-rate chemical vapor etch of silicon substrates
Methods of etching a silicon substrate at a high rate using a chemical vapor etching process are provided. A silicon substrate may be etched by heating the silicon substrate in a process chamber and then flowing hydrochloric acid and a germanium-carrying compound into the process chamber.
12/04/14
20140357060
Method for the formation of fin structures for finfet devices
A soi substrate layer formed of a silicon semiconductor material includes adjacent first and second regions. A portion of the silicon substrate layer in the second region is removed such that the second region retains a bottom portion made of the silicon semiconductor material.
12/04/14
20140356797
Dental implant and method for producing same
The purpose of the present invention is to provide a dental implant which enables the formation of a functional periodontal tissue around the implant after the implantation of the implant. The dental implant according to the present invention is characterized in that a cell mass originated from a tooth germ tissue or a periodontal ligament tissue is placed on the surface of the implant and the surface of the implant on which the cell mass is to be placed is the whole or a part of a surface that is surrounded by an alveolar bone of a recipient during the implantation of the implant..
12/04/14
20140356386
Immunization protocol for directed expansion and maturation
A first antigen is administered to a subject to select progenitor b cells that are suitable for subsequent production of a desirable affinity-matured antibody, and then a second antigen is administered to stimulate the expansion of b cells that produce that affinity-matured antibody. An immunization protocol is used in which two different antigens are administered (usually in series, but in some embodiment simultaneously), where the first antigen elicits an efficient germline antibody response and the second antigen elicits an efficient and desired affinity-matured antibody response..
12/04/14
20140355636
Semiconductor optical element
In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layer 11 of non-light emission is disposed between a germanium light emitting layer or the light absorption layer 10 and a cladding layer 12 disposed above a substrate. The germanium protective layer 11 has the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer 10..
12/04/14
20140353801
Device isolation in finfet cmos
Embodiments herein provide approaches for device isolation in a complimentary metal-oxide fin field effect transistor. Specifically, a semiconductor device is formed with a retrograde doped layer over a substrate to minimize a source to drain punch-through leakage.
12/04/14
20140353731
Tuning strain in semiconductor devices
A fin field-effect transistor (finfet) includes a semiconductor layer over a substrate, wherein the semiconductor layer forms a channel of the finfet. A first silicon germanium oxide layer is over the substrate, wherein the first silicon germanium oxide layer has a first germanium percentage.
12/04/14
20140353718
Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon-germanium region
An improved transistor with channel epitaxial silicon and methods for fabrication thereof. In one aspect, a method for fabricating a transistor includes: forming a gate stack structure on an epitaxial silicon region, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; encapsulating the epitaxial silicon region under the gate stack structure with sacrificial spacers formed on both sides of the gate stack structure and the epitaxial silicon region; forming a channel of the transistor having a width dimension that approximates that of the epitaxial silicon region and the gate stack structure, the epitaxial silicon region and the gate stack structure formed on the channel of the transistor; removing the sacrificial spacers; and growing a raised epitaxial source and drain from the silicon substrate, with portions of the raised epitaxial source and drain in contact with the epitaxial silicon region..
12/04/14
20140353519
Attached germicidal lamp assembly
An attached germicidal lamp includes a delivery pipe defining therein an axially extending open hole for delivering a fluid, a compartment formed integral with the periphery of the delivery pipe and defining therein a top-open accommodation chamber, a window provided between the axially extending open hole and the top-open accommodation chamber, and a led lamp accommodated in the top-open accommodation chamber of the compartment and adapted to emit light through the window toward the axially extending open hole of the delivery pipe to sterilize a fluid passing through the axially extending open hole.. .
12/04/14
20140352210
Ultrasonically enhanced seed germination system
The invention consists of a sonication and imbedding process for the uptake of water and/or other beneficial substances into a seed for the purposes of reducing the time needed for germination of a plant and the time needed for full maturity growth of the resultant plant. This invention teaches that ultrasound applied to the shell of a seed will develop micro-punctures which enable the faster absorption of water and other liquid nutrients into the seed structure.
11/27/14
20140351996
Soybean seed and oil compositions and methods of making same
Methods for obtaining soybean plants that produce seed with low linolenic acid levels and moderately increased oleic levels are disclosed. Also disclosed are methods for producing seed with low linolenic acid levels, moderately increased oleic levels and low saturated fatty acid levels.
11/27/14
20140351966
Shortcut procedure of transgene integration by hypotonic shock into male germinal cells for gene expression and transgenesis
The present invention relates to a new method of gene integration in cells comprising the steps of: preparation of a suspension of poly nucleotide fragments comprising the desired gene in a hypotonic solution; administration of said suspension to cells or tissues; and maintenance of the cells or tissues in vitro or in its normal physiological condition. The invention also relates to a method of generating transgenic animal..
11/27/14
20140349852
Metabolic control of seed germination
This invention provides methods of conveniently controlling seed germination in genetically modified plants by the administration of a chemical modulator. The plant comprises a hormone-regulating gene placed under the control of a gene switch..
11/27/14
20140349460
Method for producing a silicon-germanium film with variable germanium content
The substrate is provided with a first semiconducting area partially covered by a first masking pattern to define a protected surface and an open surface. A continuous layer of silicon-germanium is deposited in non-selective manner on the first semiconducting area and on the first gate pattern.
11/27/14
20140349434
Internal electrical contact for enclosed mems devices
A method of fabricating electrical connections in an integrated mems device is disclosed. The method comprises forming a mems wafer.
11/27/14
20140348722
Surgical sterilizing container and surgical fluid extraction device
A surgical sterilizing container is provided, having a bottom and a container wall. A through-opening is formed on the sterilizing container for the exchange of media.
11/27/14
20140346612
Bulk semiconductor fins with self-aligned shallow trench isolation structures
A silicon-carbon alloy layer and a silicon-germanium alloy layer are sequentially formed on a silicon-containing substrate with epitaxial alignment. Trenches are formed in the silicon-germanium alloy layer by an anisotropic etch employing a patterned hard mask layer as an etch mask and the silicon-carbon alloy layer as an etch stop layer.
11/27/14
20140346436
Printable inks with silicon/germanium based nanoparticles with high viscosity alcohol solvents
Silicon based nanoparticle inks are formulated with viscous polycyclic alcohols to control the rheology of the inks. The inks can be formulated into pastes with non-newtonian rheology and good screen printing properties.
11/27/14
20140346366
System and method for measuring chlorine concentration in fly ash cement concret
The system for measuring chlorine concentration in fly ash cement concrete utilizes a portable neutron generator and a gamma-ray detector for performing prompt gamma neutron activation analysis of chlorine concentration in a fly ash cement concrete specimen. The system includes a portable neutron generator for generating a pulsed neutron beam having a neutron energy of approximately 2.5 mev and a gamma-ray detector, such as a bismuth germanate (bgo) gamma-ray detector.
11/27/14
20140346067
Toothbrush holder cover
A toothbrush holder cover can fit over a toothbrush holder, such as a conventional countertop toothbrush holder, to protect the toothbrushes stored therein from germ, dust, bathroom sprays, cosmetic and personal hygiene products, and the like. The toothbrush holder cover can include a curved bottom portion to allow for air exchange into and out of the toothbrush holder cover while still providing a balanced surface to rest the toothbrush holder cover upon when placed over a toothbrush holder..
11/27/14
20140345841
Heat dissipation plate
A heat dissipation plate including a heat-conductive material layer, a first metal layer, a metal substrate, and a metal ring frame is provided. The heat-conductive material layer has an upper surface and a lower surface opposite to each other.
11/27/14
20140345679
Multijunction photovoltaic device having sige(sn) and gaasnsb cells
A multijunction tandem photovoltaic device is disclosed having a bottom subcell of silicon germanium or silicon germanium tin material and above that a subcell of gallium nitride arsenide antimonide material. The materials are lattice matched to gallium arsenide, which preferably forms the substrate.
11/27/14
20140345197
Instant tomato growing kit
A kit for cultivating a plant having at least one seed of said plant, an amount of a compressed growing medium for germination and growth of said seed or seeds upon the absorption of water into said compressed medium, said growing medium comprising at least one growing composition; a collapsible container for containing said growing medium and said at least one seed, in which said plaint is to be initially cultivated, said collapsible container being sized so as to snugly accommodate the compressed growing medium when said growing medium has been expanded by the addition of water, wherein during said initial cultivation of said peat, and seed are arranged in said container; and a tray for supporting said collapsible container, wherein the tray includes at least one hole for allowing water to escape from the tray.. .
11/20/14
20140344963
Production and use of rat spermatogonial stem cell lines
A spermatogonial stem cell line that is derived from testes of rats characterized by a desirable genetic background can serve as a source for cells to transplant into male-sterile recipient animals that are immuno-compatible with the spermatogonial line. Rat cells thus transplanted readily develop into fertilization-competent, haploid male gametes, with little or no endogenous sperm competition generated by the testes of the male-sterile recipient.
11/20/14
20140342909
Uses of thaxtomin and thaxtomin compositions as herbicides
There is a need for a selective, low-risk herbicide that can be used to control weeds in cereal cultures and turf. The present invention discloses that a bacterial secondary metabolite, thaxtomin and optionally another herbicide is an effective herbicide on broadleaved, sedge and grass weeds.
11/20/14
20140342575
Method for forming an interfacial layer on a semiconductor using hydrogen plasma
Techniques include a method of forming an interfacial passivation layer between a first semiconductor material (such as germanium) and a high-k gate dielectric. Such techniques include using a hydrogen-based plasma formed using a slotted-plane antenna plasma processing system.
11/20/14
20140342523
Relaxed silicon germanium platform for high speed cmos electronics and high speed analog circuits
Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed sige as the materials platform. The relaxed sige allows for a plethora of strained si layers that possess enhanced electronic properties.
11/20/14
20140342384
Fluorescent probe
A compound represented by the formula (i) (r1 represents a substituent on the benzene ring; r2 represents a monovalent substituent; r3 and r4 represent hydrogen atom, or an alkyl group; r5 and r6 represent an alkyl group, or an aryl group; r7 and r8 represent hydrogen atom, or an alkyl group; r9 and r10 represent hydrogen atom, or a monovalent substituent; and x represents silicon atom, germanium atom, or tin atom), or a salt thereof.. .
11/20/14
20140339702
Metal pvd-free conducting structures
Structures and methods of forming the same are disclosed herein. In one embodiment, a structure can comprise a region having first and second oppositely facing surfaces.
11/20/14
20140339643
Finfet structures having silicon germanium and silicon fins
A finned structure is fabricated using a bulk silicon substrate having a carbon doped epitaxial silicon layer. A pfet region of the structure includes silicon germanium fins.
11/20/14
20140339638
Integrating channel sige into pfet structures
A structure including nfet and pfet devices is fabricated by depositing a germanium-containing layer on a crystalline silicon layer. The crystalline silicon layer is converted to silicon germanium in the pfet region to provide a thin silicon germanium channel for the pfet device fabricated thereon.


Popular terms: [SEARCH]

Germ topics: Semiconductor, Transistors, Semiconductor Material, Ion Source, Optical Fiber, Photodiode, Electrical Signal, Level Shift, Source Follower, Transimpedance Amplifier, Movable Barrier, Prophylactic, Immunoglobulin, Immunoglobulins, Evaporator

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