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This page is updated frequently with new Gallium-related patents. Subscribe to the Gallium RSS feed to automatically get the update: related Gallium RSS feeds.

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Date/App# patent app List of recent Gallium-related patents
04/10/14
20140097900
 Circuit and method for biasing a gallium arsenide (gaas) power amplifier patent thumbnailnew patent Circuit and method for biasing a gallium arsenide (gaas) power amplifier
A circuit for biasing a gallium arsenide (gaas) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (gaas) material system, a field effect transistor (fet) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (rf) amplifier stage.. .
04/10/14
20140097446
 Gallium nitride devices with gallium nitride alloy intermediate layer patent thumbnailnew patent Gallium nitride devices with gallium nitride alloy intermediate layer
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer.
04/10/14
20140097442
 Nitride semiconductor device patent thumbnailnew patent Nitride semiconductor device
A nitride semiconductor device includes a silicon substrate, a nucleation layer, a first buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate.
04/03/14
20140094094
 Modified microgrinding process patent thumbnailModified microgrinding process
A method of forming a substrate is performed by grinding a substrate using abrasives so that both major surfaces of the substrate achieve desired flatness, smoothness, or both. In an embodiment, a coarser abrasive is used to grind one major surface, while a finer abrasive is simultaneously used to grind the other major surface.
04/03/14
20140093451
 Coupled identification and treatment of cancer patent thumbnailCoupled identification and treatment of cancer
Provided are methods to treat cancer, in which (1) a patient is first identified as having a cancer that is likely to be susceptible to gallium therapy, by the use of a gallium scan or other procedure that shows whether the cancer is gallium-avid, and (2) the patient is then treated with a pharmaceutically acceptable gallium composition.. .
04/03/14
20140091222
 Neutron detection apparatus including a gadolinium yttrium gallium aluminum garnet and methods to use same patent thumbnailNeutron detection apparatus including a gadolinium yttrium gallium aluminum garnet and methods to use same
A neutron detection apparatus can include a scintillator having a formula of gd3(1-x)y3aal5(1-y)ga5yo12. In an embodiment, x is at least approximately 0.05 and no greater than approximately 0.5 and y is at least approximately 0.05 and no greater than approximately 0.95.
04/03/14
20140090710
 Ink deposition processes for thin film cigs absorbers patent thumbnailInk deposition processes for thin film cigs absorbers
Efficient processes for making thin film cigs photovoltaic light absorber materials on a substrate. The processes involve depositing cigs polymeric precursor inks in combination with depositing indium gallium selenide molecular precursor inks onto a substrate..
03/27/14
20140087004
 Gallium-doped phosphocalcic compounds patent thumbnailGallium-doped phosphocalcic compounds
The invention further relates to a solid state process and a process in solution for the manufacture of such compounds and the use thereof for the preparation of a biomaterial, in particular a self-setting calcium-phosphate cement (cpc).. .
03/27/14
20140086539
 Laser package having multiple emitters configured on a support member patent thumbnailLaser package having multiple emitters configured on a support member
A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as gan, aln, inn, ingan, algan, and alingan, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate..
03/20/14
20140077222
 Gallium nitride devices with aluminum nitride alloy intermediate layer patent thumbnailGallium nitride devices with aluminum nitride alloy intermediate layer
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer.
03/20/14
20140077158
Light emitting diode (led) using three-dimensional gallium nitride (gan) pillar structures
A method is provided for fabricating a light emitting diode (led) using three-dimensional gallium nitride (gan) pillar structures with planar surfaces. The method forms a plurality of gan pillar structures, each with an n-doped gan (n-gan) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family.
03/20/14
20140077153
Photonic devices with embedded hole injection layer to improve efficiency and droop rate
The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-gan) layer located over a substrate.
03/20/14
20140076402
Controlled deposition of photovoltaic thin films using interfacial wetting layers
A method for forming a photovoltaic device by depositing at least one wetting layer onto a substrate where the wetting layer is ≦100 nm and sputtering a photovoltaic material onto the wetting layer where the wetting layer interacts with the photovoltaic material. Also disclosed is the related photovoltaic device made by this method.
03/13/14
20140073120
Method of fabricating gallium nitride based semiconductor device
Exemplary embodiments of the present invention disclose a method of fabricating a gallium nitride (gan) based semiconductor device. The method includes growing gan based semiconductor layers on a first surface of a gan substrate to form a semiconductor stack, and separating at least a first portion of the gan substrate from the semiconductor stack using a wire cutting technique..
03/13/14
20140073115
Method of manufacturing large area gallium nitride substrate
A method of manufacturing a large area gallium nitride (gan) substrate includes forming a buffer layer on a silicon substrate, forming an insulation layer pattern on a rim of a top surface of the buffer layer, growing a gan layer on the buffer layer, and removing the insulation layer pattern and a portion of the gan layer and the silicon substrate.. .
03/13/14
20140073082
Method of manufacturing light - absorbtion layer of solar cell through selenization process under elemental selenium vapor atmosphere and thermal processing apparatus for manufacturing light - absorbing layer
The method of manufacturing a light absorbing layer for a solar cell by performing thermal treatment on a specimen configured to include thin films of one or more of copper, indium, and gallium on a substrate and element selenium, includes steps of: (a) heating a wall of a chamber up to a predefined thin film formation temperature in order to maintain a selenium vapor pressure; (b) mounting the specimen and the element selenium on the susceptor at the room temperature and loading the susceptor in the chamber; and (c) heating the specimen in the lower portion of the susceptor and, at the same time, heating the element selenium in the upper portion of the susceptor, wherein, in the step (c), in order for liquefied selenium not to be condensed on the specimen which is loaded at the room temperature and is not yet heated, the temperature of the element selenium and the specimen loaded in the chamber are individually controlled, so that the selenium vapor pressure of an inner space of the chamber does not exceed a saturation vapor pressure corresponding to the temperature of the specimen.. .
03/13/14
20140070347
Methods for producing chalcopyrite compound thin films for solar cells using multi-stage paste coating
Disclosed are methods for producing chalcopyrite compound (e.g., copper indium selenide (cis), copper indium gallium selenide (cigs), copper indium sulfide (cis) or copper indium gallium sulfide (cigs)) thin films. The methods are based on solution processes, such as printing, particularly, multi-stage coating of pastes or inks of precursors having different physical properties.
03/13/14
20140070226
Bondable top metal contacts for gallium nitride power devices
An embodiment of a semiconductor device includes a gallium nitride (gan) substrate having a first surface and a second surface. The second surface is substantially opposite the first surface, at least one device layer is coupled to the first surface, and a backside metal is coupled to the second surface.
03/06/14
20140066674
Uzm-39 aluminosilicate zeolite
Where “n” is the mole ratio of na to (al+e), m represents a metal or metals from zinc, group 1, group 2, group 3 and or the lanthanide series of the periodic table, “m” is the mole ratio of m to (al+e), “k” is the average charge of the metal or metals m, t is the organic structure directing agent or agents, and e is a framework element such as gallium. These zeolites are similar to tnu-9 and im-5 but are characterized by unique compositions and synthesis procedures and have catalytic properties for carrying out various hydrocarbon conversion processes and separation properties for carrying out various separations..
03/06/14
20140065360
Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators..
03/06/14
20140065037
Treatment of indium gallium alloys and recovery of indium and gallium
There is provided a hydrometallurgical process of recovering indium and gallium values from mixtures thereof with other metal values for example recycled and scrap solar panel cells which comprises subjecting the mixture to strongly oxidizing acid conditions, preferably via the simultaneous addition of sulfuric acid and hydrogen peroxide to the leach vessel, so as to form indium and gallium salt species of at least the major proportion of the indium and gallium values in the mixture, extracting the indium and gallium values with an organic extractant by adjusting the ph so as to extract individually the indium and gallium values with the organic extractant, stripping indium and gallium values from the extractant using an acid and an alkaline solution respectively and recovering the indium and gallium values.. .
03/06/14
20140061982
Extraction of gallium and/or arsenic from gallium arsenide
Extracting gallium and/or arsenic from materials comprising gallium arsenide is generally disclosed. In some example embodiments, a material comprising gallium arsenide may be exposed to a first heating condition to form a first exhaust.
03/06/14
20140061663
Semiconductor buffer structure, semiconductor device including the same, and manufacturing method thereof
A semiconductor structure including a first nitride semiconductor layer, a second nitride semiconductor layer, and a third layer between the first nitride semiconductor layer and the second nitride semiconductor layer. The first nitride semiconductor layer has a first gallium composition ratio, the second nitride semiconductor layer has a second gallium composition ratio different from the first metal composition ratio, and the third layer has a third gallium composition ratio greater than at least one of the first gallium composition ratio or the second gallium composition ratio.
03/06/14
20140061660
Semiconductor light emitting device and manufacturing method thereof
A semiconductor light emitting device includes a supporting substrate, a light emitting layer including a nitride semiconductor, and a nitride multilayer film. The nitride multilayer film includes a first layer including a first nitride semiconductor containing aluminum nitride, a second layer including a second nitride semiconductor containing gallium nitride, and a third layer including the first nitride semiconductor containing aluminum nitride..
03/06/14
20140061658
High electron mobility transistor and manufacturing method thereof
The present invention discloses an enhanced mode high electron mobility transistor (hemt) which includes: a p-type gallium nitride (gan) layer; a barrier layer, which is formed on and connected to the gan layer; a dielectric layer, which is formed on and connected to the gan layer, wherein the barrier layer does not overlap at least part of the dielectric layer; a gate, which is formed on the dielectric layer for receiving a gate voltage; and a source and a drain, which are formed at two sides of the gate on the gan layer respectively; wherein a two dimensional electron gas (2deg) is formed at a junction of the gan layer and the barrier layer which does not include a portion of the junction below the gate, and the 2deg does not electrically connect the source to the drain when there is no voltage applied to the gate.. .
03/06/14
20140061507
Broadband artificial dielectric with dynamically optical control
A material is provided for switching dielectric constant between distinct first and second values responsive to electromagnetic radiation having a specified energy. The material includes a medium transparent to the radiation and a plurality of particulates.
02/27/14
20140054619
Method and apparatus for packaging phosphor-coated leds
The present disclosure involves a method of packaging light-emitting diodes (leds). According to the method, a plurality of leds is provided over an adhesive tape.
02/27/14
20140054605
Composite substrates, light emitting devices and a method of producing composite substrates
A plurality of protrusions 3 are provided on a c-face 2a of a sapphire body 2. An underlying layer 5 made of gallium nitride is then grown by vapor phase epitaxy process on the c-face 2a.
02/27/14
20140054601
Gallium nitride (gan) device with leakage current-based over-voltage protection
A gallium nitride (gan) device with leakage current-based over-voltage protection is disclosed. The gan device includes a drain and a source disposed on a semiconductor substrate.
02/27/14
20140054595
Composite substrate of gallium nitride and metal oxide
The present invention discloses a novel composite substrate which solves the problem associated with the quality of substrate surface. The composite substrate has at least two layers comprising the first layer composed of gaxalyin1-x-yn (0≦x≦1, 0≦x+y≦1) and the second layer composed of metal oxide wherein the second layer can be removed with in-situ etching at elevated temperature.
02/27/14
20140053903
Photoelectric conversion element and solar cell
A photoelectric conversion element of an embodiment includes: a light absorbing layer containing copper (cu), at least one group iiib element selected from the group including aluminum (al), indium (in) and gallium (ga), and sulfur (s) or selenium (se), and having a chalcopyrite structure; and a buffer layer formed from zinc (zn) and oxygen (o) or sulfur (s), wherein the molar ratio represented by s/(s+o) of the buffer layer is equal to or greater than 0.7 and equal to or less than 1.0, and the crystal grain size is equal to or greater than 10 nm and equal to or less than 100 nm.. .
02/20/14
20140051335
Abrasive and polishing composition
Provided is a polishing composition containing an abrasive and water. The abrasive content in the polishing composition is no less than 0.1% by mass.


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Gallium topics: Gallium Nitride, Semiconductor, Semiconductor Device, Microfabrica, Transistors, Treatments, Buffer Layer, Phthalocyanine, Crystallin, Fatty Acid, Exothermic, Unmanned Vehicle, Gallium Arsenide, Semiconductor Wafer, Hydrogen Peroxide

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