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Finfet Structure patents



      
           
This page is updated frequently with new Finfet Structure-related patents. Subscribe to the Finfet Structure RSS feed to automatically get the update: related Finfet RSS feeds.

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Date/App# patent app List of recent Finfet Structure-related patents
04/17/14
20140106528
 Finfet circuits with various fin heights patent thumbnailnew patent Finfet circuits with various fin heights
A method of forming a fin field effect transistor (finfet) includes forming a plurality of fins of varying heights on a substrate and forming a first gate structure on one or more fins of a first height to form a first finfet structure and a second gate structure on one or more fins of a second height to form a second finfet structure. The method includes epitaxially forming an epitaxial fill material on the one or more fins of the first finfet structure and the second finfet structure.
04/17/14
20140103453
 Control fin heights in finfet structures patent thumbnailnew patent Control fin heights in finfet structures
A device includes a substrate, an isolation region at a top surface of the substrate, and a semiconductor fin over the isolation region. The semiconductor fin has a fin height smaller than about 400 Å, wherein the fin height is measured from a top surface of the semiconductor fin to a top surface of the isolation region.
02/27/14
20140054650
 Method for increasing fin density patent thumbnailMethod for increasing fin density
The present disclosure is directed to a method of manufacturing a finfet structure in which at least one initial set of fin structures is formed by photolithographic processes, followed by forming an additional fin structure by epitaxial growth of a semiconductor material between the initial set of fin structures. The method allows for formation of finfet structures having increased fin density..
02/06/14
20140038402
 Dual work function finfet structures and methods for fabricating the same patent thumbnailDual work function finfet structures and methods for fabricating the same
A method for fabricating a dual-workfunction finfet structure includes depositing a first workfunction material in a layer in a plurality of trenches of the finfet structure, depositing a low-resistance material layer over the first workfunction material layer, and etching the low-resistance material layer and the first workfunction material layer from a portion of the finfet structure. The method further includes depositing a second workfunction material in a layer in a plurality of trenches of the portion and depositing a stress material layer over the second workfunction material layer..
01/30/14
20140030876
 Methods for fabricating high carrier mobility finfet structures patent thumbnailMethods for fabricating high carrier mobility finfet structures
A method for fabricating an integrated circuit having a finfet structure includes providing a semiconductor substrate comprising silicon and a high carrier mobility material, forming one or more fin structures on the semiconductor substrate, and subjecting the substrate to a condensation process for the condensation of the high carrier mobility material. The condensation process results in the formation of condensed fin structures formed substantially entirely of the high carrier mobility material and a layer of silicon oxide formed over the condensed fin structures.
01/16/14
20140015055
 Finfet structures and methods for fabricating the same patent thumbnailFinfet structures and methods for fabricating the same
A method is disclosed for fabricating an integrated circuit in a replacement-gate process flow utilizing a dummy-gate structure overlying a plurality of fin structures. The method includes removing the dummy-gate structure to form a first void space, depositing a shaper material to fill the first void space, removing a portion of the plurality of fin structures to form a second void space, epitaxially growing a high carrier mobility material to fill the second void space, removing the shaper material to form a third void space, and depositing a replacement metal gate material to fill the third void space..
01/02/14
20140004692
 Finfet structure with multiple workfunctions and method for fabricating the same patent thumbnailFinfet structure with multiple workfunctions and method for fabricating the same
A method for fabricating a multiple-workfunction finfet structure includes depositing a first workfunction material in a layer in a plurality of trenches of the finfet structure and etching the first workfunction material layer so as to completely remove the first workfunction material layer from all but a first trench of the plurality of trenches. Further, the method includes depositing a second workfunction material in a layer in the plurality of trenches and etching the second workfunction material layer so as to completely remove the second workfunction material layer from all but a second trench of the plurality of trenches.
12/26/13
20130341733
 Plural differential pair employing finfet structure patent thumbnailPlural differential pair employing finfet structure
A plural differential pair may include a first semiconductor fin having first and second drain areas. First and second body areas may be disposed on the fin between the first and second drain areas.
11/07/13
20130295759
 Methods for manufacturing metal gates patent thumbnailMethods for manufacturing metal gates
Provided are methods for making metal gates suitable for finfet structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a pmos work function layer having a positive work function value; depositing an nmos work function layer; depositing an nmos work function cap layer over the nmos work function layer; removing at least a portion of the pmos work function layer or at least a portion of the nmos work function layer; and depositing a fill layer.
10/24/13
20130277760
 Dummy finfet structure and method of making same patent thumbnailDummy finfet structure and method of making same
A finfet device may include a dummy finfet structure laterally adjacent an active finfet structure to reduce stress imbalance and the effects of stress imbalance on the active finfet structure. The finfet device comprises an active finfet comprising a plurality of semiconductor fins, and a dummy finfet comprising a plurality of semiconductor fins.
09/05/13
20130228866
Semiconductor devices and manufacturing and design methods thereof
Semiconductor devices and manufacturing and design methods thereof are disclosed. In one embodiment, a semiconductor device includes an active finfet disposed over a workpiece comprising a first semiconductive material, the active finfet comprising a first fin.
08/08/13
20130200454
Replacement-gate finfet structure and process
A fin field effect transistor (finfet) structure and method of making the finfet including a silicon fin that includes a channel region and source/drain (s/d) regions, formed on each end of the channel region, where an entire bottom surface of the channel region contacts a top surface of a lower insulator and bottom surfaces of the s/d regions contact first portions of top surfaces of a lower silicon germanium (sige) layer. The finfet structure also includes extrinsic s/d regions that contact a top surface and both side surfaces of each of the s/d regions and second portions of top surfaces of the lower sige layer.
08/08/13
20130200449
Finfet structure with novel edge fins
A semiconductor device including field-effect transistors (finfets) formed on a silicon substrate. The device includes a number of active areas each having a number of equally-spaced fins separated into regular fins and at least one edge fin, a gate structure over the regular fins, and a drain region as well as a source region electrically connected to the regular fins and disconnected to the at least one edge fin.
07/18/13
20130181300
Control fin heights in finfet structures
A device includes a substrate, an isolation region at a top surface of the substrate, and a semiconductor fin over the isolation region. The semiconductor fin has a fin height smaller than about 400 Å, wherein the fin height is measured from a top surface of the semiconductor fin to a top surface of the isolation region.
07/11/13
20130175621
Finfet structure and method for making the same
A finfet device includes a substrate, at least a first fin structure disposed on the substrate, a l-shaped insulator surrounding the first fin structure and exposing, at least partially, the sidewalls of the first fin structure, wherein the height of the l-shaped insulator is inferior to the height of the first fin structure in order to expose parts of the sidewalls surface of the first fin structure, and a gate structure disposed partially on the l-shaped insulator and partially on the first fin structure.. .
05/23/13
20130126978
Circuits with linear finfet structures
A first transistor has source and drain regions within a first diffusion fin. The first diffusion fin projects from a surface of a substrate.
04/25/13
20130099313
Finfet structure and method to adjust threshold voltage in a finfet structure
Finfet structures and methods of manufacturing the finfet structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a finfet structure to induce vt shift.
03/14/13
20130062692
Half-finfet semiconductor device and related method
According to one embodiment, a half-finfet semiconductor device comprises a gate structure formed over a semiconductor body. The semiconductor body includes a source region comprised of a plurality of fins extending beyond a first side of the gate structure and a continuous drain region adjacent a second side of the gate structure opposite the plurality of fins.
02/28/13
20130052801
Method to enable compressively strained pfet channel in a finfet structure by implant and thermal diffusion
A method of making a semiconductor device patterns a first fin in a pfet region, and patterns a second fin in an nfet region. A plurality of conformal microlayers containing a straining material are deposited on the first and second fins.
02/21/13
20130043544
Structure having three independent finfet transistors
A semiconductor chip has a finfet structure with three independently controllable fets on a single fin. The three fets are connected in parallel so that current will flow between a common source and a common drain if one or more of the three independently controllable fets is turned on.
01/10/13
20130009249
Finfet devices and methods of manufacture
A finfet structure and method of manufacture such structure is provided with lowered ceff and enhanced stress. The finfet structure includes a plurality of finfet structures and a stress material forming part of a gate stack and in a space between adjacent ones of the plurality of finfet structures..


Popular terms: [SEARCH]

Finfet Structure topics: Finfet Structure, Semiconductor, Semiconductor Device, Transistors, Semiconductor Devices, Disconnect, Field Effect Transistor, Replacement Gate, Common Source, Source Follower

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This listing is a sample listing of patents related to Finfet Structure for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Finfet Structure with additional patents listed. Browse our RSS directory or Search for other possible listings.
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