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|| List of recent Electron Spin-related patents
|Dinitroxide-type biradical compounds optimized for dynamic nuclear polarization (dnp)|
The present invention relates to the field of organic chemistry and in particular to organic free radicals used as polarizing agents in the technique of dynamic nuclear polarization (dnp), which involves transferring the polarization of electron spins to the nuclei of a compound whose nuclear magnetic resonance (nmr) is being observed. It concerns dinitroxide-type biradical polarizing agents characterized by a rigid linkage between the aminoxyl groups of said nitroxide units.
|Voltage controlled spin transport channel|
A spin transport channel includes a dielectric layer contacting a conductive layer. The dielectric layer includes at least one of a tantalum oxide, hafnium oxide, titanium oxide, and nickel oxide.
|Devices and methods using recessed electron spin analyzers|
In certain embodiments, an apparatus includes a top shield, bottom shield, polarizer, nonmagnetic conductor layer, and a sensor stack having a first sensor layer. The sensor stack is positioned at a distance recessed from a first plane.
|Electron spin resonance for medical imaging|
A method includes generating, from an integrated oscillator circuit, an oscillating output signal and generating, by an integrated power amplifier (pa) circuit, an amplified oscillating output signal based on the oscillating output signal. The method further includes receiving, by integrated receiver amplifier circuit, an electron spin resonance (esr) signal from biological samples that include a magnetic species and generating, by the integrated receiver amplifier circuit, an amplified esr signal based on the received esr signal.
|Intergrated electron spin resonance spectrometer|
An integrated electron spin resonance (esr) circuit chip includes a chip substrate, a transmitter circuit, and a receiver circuit. The transmitter circuit and receiver circuit are disposed on the chip substrate.
|Diamond sensors, detectors, and quantum devices|
A thin plate of synthetic single crystal diamond material, the thin plate of synthetic single crystal diamond material having: a thickness in a range 100 nm to 50 μιη; a concentration of quantum spin defects greater than 0.1 ppb (parts-per-billion); a concentration of point defects other than the quantum spin defects of below 200 ppm (parts-per-million); and wherein at least one major face of the thin plate of synthetic single crystal diamond material comprises surface termination species which have zero nuclear spin and/or zero electron spin.. .
|Dual-mode microwave resonator device and method of electron spin resonance measurement|
A microwave resonator device (1), being configured in particular for electron spin resonance measurements, comprises a resonator being resonant with first and second microwave field modes and including first and second resonance sections (7, 8) arranged along a longitudinal axis (2) of the resonator, and a coupling unit being arranged between the first and second resonance sections, wherein the coupling unit includes a conducting plate (16) being arranged on the longitudinal axis (2) and covering a central portion of a cross-sectional area of the resonator, the conducting plate (16) is adapted to adjust a first mode frequency of the first microwave field mode, and the conducting plate (16) is arranged at a field minimum of the second microwave field mode. Furthermore, a method of conducting an electron spin resonance measurement with a sample to be investigated is described..
|Isolating active electron spin signals in epr|
A system and method involve performing electron paramagnetic resonance on an object under study. The system comprises a first field generator adapted for generating an orienting magnetic field for orienting the magnetization of the object under study and a second field generator adapted for generating rf excitation waves at a frequency to generate electron paramagnetic resonance (epr) in the object under test.
A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer.
|Graphite material for a lithium ion secondary cell negative electrode, method of manufacturing same, and lithium ion secondary cell|
A graphite material for a negative electrode of a lithium ion secondary cell is capable of suppressing capacity degradation caused by the repetition of charging and discharging cycles, storage in a charged state, floating charging and the like. A graphite material for a negative electrode of a lithium ion secondary cell, in which lc (112), which is a crystallite size in a c-axis direction calculated from a (112) diffraction line measured using powder x-ray diffraction method, is within 4.0 nm to 30 nm, a carbon-derived spectrum appearing in electron spin resonance spectroscopy, which is measured using an x band, is in a range of 3200 gauss (g) to 3400 gauss (g), a relative signal intensity ratio (i4.8k/i40k) of the signal intensity (i4.8k) of the spectrum measured at a temperature of 4.8 k to the signal intensity (i40k) of the spectrum measured at a temperature of 40 k is within 1.5 to 3.0, and Δhpp, which is a line width of the spectrum calculated from a primary derivative spectrum of the temperature of 4.8 k, is within 20 gauss (g) to 40 gauss (g)..
Electric characteristics of a semiconductor device using an oxide semiconductor are improved. Further, a highly reliable semiconductor device in which a variation in electric characteristics with time or a variation in electric characteristics due to a gate bt stress test with light irradiation is small is manufactured.
|Epr methods and systems|
Various systems and methods for detecting electron spins using electron paramagnetic resonance are described. An excitation signal generator configured to generate an excitation signal of varying amplitude and phase as compared to a reference signal may be present.
|Amorphous carbon material for negative electrode of lithium ion secondary battery and nonaqueous secondary battery comprising same|
Provided is an amorphous carbon material for a negative electrode of a lithium ion secondary battery. The amorphous carbon material comprises a size of a crystallite lc(002) in c-axis direction ranging from 2.0 to 8.0 nm, the size being calculated from a (002) diffraction line of the amorphous carbon material measured by powder x-ray diffractometry; a carbon-derived spectrum appearing in a range from 3,200 to 3,400 gauss (g) in an electron spin resonance measured using x band; a relative signal intensity ratio (i4.8k/i40k) of the spectrum ranging from 2.4 to 3.5, wherein the relative signal intensity ratio is a ratio of signal intensity (i4.8k) at temperature of 4.8 k to signal intensity (i40k) at temperature of 40k; and a line width (Δhpp) of the spectrum ranging from 70 to 180 gauss (g), wherein the line width is calculated from a first-order derivative spectrum at temperature of 4.8 k..
|Semiconductor ceramic and method for manufacturing the same, and laminated semiconductor ceramic capacitor with varistor function and method for manufacturing the same|
A semiconductor ceramic contains a donor element solid-solved in crystal grains of a srtio3-based compound, and an acceptor element in a grain boundary layer. The number of tetravalent acceptor elements is 1×1017/g or more, as determined from an electron spin resonance absorption spectrum.
|Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film|
One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween. The oxide semiconductor film has a spin density lower than 9.3×1016 spins/cm3 and a carrier density lower than 1×1015/cm3.
|Device and method for rapid dynamic nuclear polarization|
A method and apparatus for producing a hyperpolarized sample material for use in an nmr investigation provides for a cryogenic region having a target material containing a first hyperpolarizable nuclear species, a second hyperpolarizable nuclear species, and a nuclear spin polarizing agent, wherein the first nuclear species has a higher magnetic moment than the second nuclear species. Microwave energy is used to excite electron spin transitions in the polarizing agent in the presence of a magnetic field.
|Time-of-flight electron energy analyzer|
A time-of-flight (tof) photoemission electron energy analyzer includes a tof spectrometer for measuring an energy spectrum of a beam of electrons photoemitted from a sample and a 90 degree bend bandpass filter for spatially dispersing and filtering electrons according to energy. An exchange scattering electron spin polarimeter for detecting the spin of electrons includes an entrance aperture for admitting an electron beam, a magnetizable target positionable for receiving the electron beam at an angle relative to a target surface normal vector, a pair of helmholtz coils positioned about the target for magnetizing the target in a selected direction, and a high-speed multi-channel plate (mcp) detector facing toward the target for receiving electrons reflected from the target surface, the mcp outputting a signal corresponding to the spin dependent intensity and time of electrons' arrivals..
|Beta-sialon, and light emitting device and applications thereof|
An object of the present invention is to provide a phosphor that is combined with a blue led to achieve white light at a low color temperature as if singly, has a broad fluorescence spectrum for excellent color rendering properties, has a high luminous efficiency, is thermally and chemically stable like conventional nitride-based phosphors, and has a small decrease in luminance at high temperatures. Another object of the present invention is to provide a light emitting device using such a phosphor.
|Image acquiring method and image acquiring apparatus|
The invention relates to a method for acquiring, by use of a continuous-wave electron spin resonance imaging scheme that sweeps a magnetic field, a 14n nitroxy radical distribution image and a 15n nitroxy radical distribution image in a single image capturing operation. This image acquiring method is characterized in that the central one (b) of three absorption peaks derived from 14n nitroxy radical is caused to move to a higher or lower magnetic field side and fourier transform is used to determine a parameter (α), which represents the amplitude of the absorption peak of the higher or lower magnetic field side, and a parameter (γ) which represents the peak position of that absorption peak..
|Semiconductor device and manufacturing method thereof|
Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved.
|System and method for electron spin resonance|
A resonator system for electron spin resonance (esr) is disclosed. The resonator system comprises: a generally planar resonator layer defining an open-loop gapped by a non-conductive gap in the layer, and a microwave feed, positioned configured for transmitting microwave to the resonator layer such as to concentrate, with a quality factor of at least 100, a magnetic field within an effective volume of less than 1 nl above the layer..
|B-sialon and method of manufacturing thereof, and light-emitting device|
β-sialon represented by a general formula si6-zalzozn8-z with eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° c. Obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g.
According to one embodiment, a spin-torque oscillator includes a non-magnetic unit, one or more first magnetic unit, and a second magnetic unit. The non-magnetic unit is formed of a non-magnetic body.
|Devices and methods using recessed electron spin analyzers|
In certain embodiments, a magnetic had includes a top shield and a bottom shield positioned at an air bearing surface. A polarizer and a nonmagnetic layer are positioned between the top and bottom shields.
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Electron Spin topics: Electron Spin, Magnetic Field, Semiconductor, Semiconductor Device, Lithium Ion, Irradiation, Crystallite Size, Absorption Spectrum, Sputtering Method, Wave Energy, Scattering, Spectrometer, Fourier Transform, Fluorescence, Diffusion Length
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