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Electrode patents

      

This page is updated frequently with new Electrode-related patent applications.




 Control system of a balanced micro-pulsed ionizer blower patent thumbnailnew patent Control system of a balanced micro-pulsed ionizer blower
In one embodiment of the invention, a method of automatically balancing ionized air stream created in bipolar corona discharge is provided. The method comprises: providing an air moving device with at least one ion emitter and reference electrode connected to a micro-pulsed ac power source, and a control system with at least one ion balance monitor and corona discharge adjustment control; generating variable polarity groups of short duration ionizing micro-pulses: wherein said micro-pulses are predominantly asymmetric in amplitude and duration of both polarity voltages and have a magnitude of at least one polarity ionizing pulses exceed the corona threshold..
Illinois Tool Works Inc.


 Electronic device, earphone, and electronic device system patent thumbnailnew patent Electronic device, earphone, and electronic device system
A third terminal of a five-electrode plug is connected to a power supply terminal of a first differential amplifier and a power supply terminal of a second differential amplifier in an earphone. The first differential amplifier and the second differential amplifier supply amplified voltages to a first piezoelectric element and a second piezoelectric element, respectively.
Kyocera Corporation


 Unidirectional condenser microphone unit, unidirectional condenser microphone, and  manufacturing unidirectional condenser microphone unit patent thumbnailnew patent Unidirectional condenser microphone unit, unidirectional condenser microphone, and manufacturing unidirectional condenser microphone unit
A unidirectional condenser microphone unit is provided that have directionality unaffected by the external environment, and a method of manufacturing the unidirectional condenser microphone. The unidirectional condenser microphone unit having an interior and an exterior, the unidirectional condenser microphone includes a diaphragm, a fixed electrode facing the diaphragm, the fixed electrode constituting a capacitor with the diaphragm, an insulating base disposed in a back face side of the fixed electrode, the insulating base supporting the fixed electrode, an air chamber disposed in the back face side of the fixed electrode, and a gap disposed between the fixed electrode and the insulating base.
Kabushiki Kaisha Audio-technica


 Modulator for stereoscopic image device and stereoscopic image device using same patent thumbnailnew patent Modulator for stereoscopic image device and stereoscopic image device using same
The present invention relates to a modulator for a stereoscopic image device, comprising: two spaced substrates; two electrodes provided between the substrates; and a liquid crystal unit provided between the electrodes, wherein at least one of the two substrates is divided into a plurality of electrodes, each of which is formed to be insulted, such that a plurality of different voltages can be applied.. .
Masterimage 3d Asia, Llc.


 Solid-state image pickup element, and image pickup system patent thumbnailnew patent Solid-state image pickup element, and image pickup system
Provided is a solid-state image pickup element including: a plurality of pixels arranged in a pixel well region; a readout circuit arranged in a peripheral well region, having a first input terminal for receiving the pixel signals from the plurality of pixels and a second input terminal for receiving a reference signal; and a reference signal circuit arranged in the peripheral well region, having a first electrode to which a ground voltage is supplied, and being configured to output the reference signal to the second input terminal of the readout circuit, wherein a resistance value r1 of an electrical path from one of a plurality of pixel well contacts to the first electrode and a resistance value r2 of an electrical path from one of a plurality of peripheral well contacts closest to the first electrode to the first electrode satisfy a relationship of r1<r2.. .
Canon Kabushiki Kaisha


 Mobile terminal patent thumbnailnew patent Mobile terminal
A mobile terminal comprises: a case having an electric mounting portion with electronic components installed therein and having an ear jack holder part on the outer surface thereof; and ear jack connected to the ear jack holder part and having a plug hole into which a connecting plug is inserted; a plurality of first terminals equipped inside the plug hole; a second terminal connected to the first terminal and exposed to the outside of the ear jack; an antenna carrier connected to the back side of the case and having an antenna pattern formed on the surface thereof; and an ear jack electrode pattern formed in the antenna carrier, one end thereof being connected to the second terminal, wherein the mobile terminal has an ear jack structure outside the case, and thereby can prevent water from flowing into the mobile terminal through the ear jack.. .
Lg Electronics Inc.


 Semiconductor device patent thumbnailnew patent Semiconductor device
According to embodiments, a semiconductor device includes a field-effect transistor; a switch; and a controller. The field-effect transistor includes a substrate; a nitride semiconductor layer on the substrate; a drain electrode and a source electrode on the nitride semiconductor layer; and a gate electrode between the drain electrode and the source electrode.
Kabushiki Kaisha Toshiba


 Elastic wave device and ladder filter patent thumbnailnew patent Elastic wave device and ladder filter
An elastic wave device includes an idt electrode including first electrode fingers and second electrode fingers. In an intersecting portion, in which the first electrode fingers and the second electrode fingers interdigitate with each other, low-acoustic-velocity regions are disposed on both sides of a central region, high-acoustic-velocity regions are disposed outside of the low-acoustic-velocity regions, and the dimension of each of the low-acoustic-velocity regions in the electrode finger direction is not uniform in the elastic-wave propagation direction..
Murata Manufacturing Co., Ltd.


 Acoustic wave resonator and filter including the same patent thumbnailnew patent Acoustic wave resonator and filter including the same
An acoustic wave resonator includes a substrate; a resonating part disposed on a first surface of the substrate and including a first electrode, a piezoelectric layer, and a second electrode; and a cap disposed on the first surface of the substrate and including an accommodating part accommodating the resonating part. The resonating part is configured to be operated by either one or both of a signal output from a first device substrate disposed facing a second surface of the substrate on an opposite side of the substrate from the first surface of the substrate and a signal output from a second device substrate disposed on the cap..
Samsung Electro-mechanics Co., Ltd.


 Elastic composite filter patent thumbnailnew patent Elastic composite filter
Disclosed is a technology that enables an elastic composite filter to have a capacitor to remove noise. The elastic composite includes a functional material layer; electrode patterns disposed on top and bottom surfaces of the material layer, respectively; and a conductive elastic member adhered onto the top electrode pattern, wherein the elastic member is coupled electrically and mechanically to the top electrode pattern to be used as an electrode, and the elastic member is in direct contact with a conductive object to provide elasticity..
Joinset Co., Ltd.


new patent

Energy harvesting apparatus and electronic apparatus having the same

An energy harvesting apparatus includes a housing that includes an internal portion filled with dielectric liquid in a vacuum state, first and second electrode portions that are disposed to face each other in the housing and configured to be polarized with different polarities, a first layer that forms a path along the internal portion of the housing to allow the dielectric liquid and bubbles generated from the dielectric liquid to flow through the path, and a second layer configured to insulate the first and second electrode portions from the housing. The bubbles are generated from the dielectric liquid when thermal energy is applied to the housing.
Samsung Electronics Co., Ltd.

new patent

Method for producing thermal and electrical energy and device for implementing said method

The invention relates to electrical power engineering and can be used for the production of autonomous sources of thermal and electrical energy. The required technical result, which consists in increasing the effectiveness of the generation of thermal energy whilst at the same time producing electrical energy, is achieved in a method based on the generation of a high-voltage electrical discharge between an anode electrode and a cathode electrode which are mounted in series, said electrical discharge being formed from a hydride-forming metal, and forming a vortex flow of inert gas along the axis between the anode electrode and the cathode electrode in the direction of the cathode electrode with hot steam being injected into this flow, wherein the high-voltage electric discharge between the anode electrode and the cathode electrode is generated by means of the supply of a combined voltage to said electrodes, said combined voltage comprising a dc component and a radio-frequency component, the cathode electrode is in the form of a nozzle with an opening for the hot vapour outflow, and at least one pair of electrode probes for drawing electrical energy is mounted between the electrodes, one of said electrode probes being arranged on the axis of the vortex flow, and the other being arranged at the periphery thereof.
Limited Liability Company "new Inflow"

new patent

Cylindrical and spherical triboelectric generators

A generator includes a first member, a second member and a sliding mechanism. The first member includes a first electrode and a first dielectric layer affixed to the first electrode.
Georgia Tech Research Corporation

new patent

High power driver

A transistor circuit includes a transistor having a control electrode, a first current electrode, and a second current electrode. A turn off mode change circuit has a signal input that receives a series of pulses, an output coupled to the control electrode of the transistor, and a control input.
Freescale Semiconductor, Inc.

new patent

All-solid-state battery system and manufacturing the same

An all-solid-state battery system comprising an all-solid-state battery comprising a positive electrode active material layer, a solid electrolyte layer, and a negative electrode active material layer, and a control device configured to control a charge-discharge voltage during use of the all-solid-state battery. The negative electrode active material layer includes alloy negative electrode active material particles.
Toyota Jidosha Kabushiki Kaisha

new patent

Battery system with overcharge and/or exhaustive-discharge protection

Battery system with overcharge and/or exhaustive-discharge protection, comprising at least one electrical energy store having a first pole which is electrically connected to a first electrode of the electrical energy store, having a second pole which is electrically connected to a second electrode of the electrical energy store, having a rapid-discharge unit for electrically discharging the electrical energy store having a first connection which is electrically connected to the first pole, having a second connection which is electrically connected to the second pole, characterized in that the battery system comprises a tripping unit for tripping the rapid-discharge unit.. .
Lithium Energy And Power Gmbh & Co. Kg

new patent

Spark plug for internal combustion engine and production method thereof

A spark plug for an internal combustion engine is provided which includes a housing, a porcelain insulator, a center electrode, and an annular ground electrode. The housing has a small-diameter portion which has a smaller inner diameter and defines a front end thereof.
Denso Corporation

new patent

Spark plug

A spark plug includes an insulator having an axial hole formed therethrough in the direction of an axis of the spark plug, a center electrode disposed in a front side of the axial hole and a metal shell disposed around an outer circumference of the insulator and having a collar-shaped tool engagement portion and a crimp portion located on a rear side of the tool engagement portion and reduced in diameter toward the rear, wherein the crimp portion of the metal shell is made of a carbon steel material having a grain size number equal to or greater than no. 11 as measured according to jis g 0551..
Ngk Spark Plug Co., Ltd.

new patent

Multi-electrode spark plug

A multi-electrode spark plug having a large spark target volume is disclosed. The spark plugs have a plurality of ground electrode rods which extend from the base of the spark plug and are twisted around center electrode to provide a plurality of substantially equidistant spark points relative to the center electrode.

new patent

Spark plug for internal combustion engine

A spark plug for an internal combustion engine is provided which includes a housing, a porcelain insulator, a center electrode, and an annular ground electrode. The housing has a small-diameter portion which has a smaller inner diameter and defines a front end thereof.
Denso Corporation

new patent

Surge protection element

The invention specifies a surge protection element (100) comprising a first electrode (1), a second electrode (2) and a gas discharge chamber (10). The gas discharge chamber (10) is arranged between the first electrode (1) and the second electrode (2), wherein the surge protection element (100) comprises an intermediate electrode structure (3), which is arranged in the gas discharge chamber (10) and is electrically isolated from the first electrode and the second electrode (1, 2)..
Epcos Ag

new patent

Thermal emission source and two-dimensional photonic crystal for use in the same emission source

A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer..
Japan Science And Technology Agency

new patent

Semiconductor laser element and making semiconductor laser device

A semiconductor laser element includes an inclined substrate, a semiconductor layer formed on one surface of the substrate, a first electrode (n-type electrode) formed on an opposite surface of the substrate, a second electrode (p-type electrode) formed on the semiconductor layer, and a current constriction part formed in the semiconductor layer. The semiconductor layer has a multi-layer structure including at least an active layer.
Ushio Denki Kabushiki Kaisha

new patent

Electronic device

An electronic device includes a substrate, and a press-fit terminal. The substrate includes a first surface, a second surface opposite to the first surface in a thickness direction of the substrate, a through hole, and an electrode formed in the first surface, the second surface, and a wall of the through hole.
Denso Corporation

new patent

Vehicular antenna apparatus and connector for vehicular antenna apparatus

The present invention relates to a vehicular antenna apparatus including: a dielectric substrate; an antenna provided to the dielectric substrate; and a connector electrically connected to a feeding cable of a receiving apparatus, in which the antenna includes an antenna conductor provided to the dielectric substrate, and a feeding electrode electrically connected to the antenna conductor and provided on a first surface of the dielectric substrate, the connector includes a connector main body supporting the feeding cable, and a terminal electrode provided to the connector main body and electrically connected to the feeding cable, and the feeding electrode and the terminal electrode are joined via an insulating adhesive, thereby being capacitively coupled with each other.. .
Asahi Glass Company, Limited

new patent

Power storage unit and solar power generation unit

Disclosed is a power storage unit which can safely operate over a wide temperature range. The power storage unit includes: a power storage device; a heater for heating the power storage device; a temperature sensor for sensing the temperature of the power storage device; and a control circuit configured to inhibit charge of the power storage device when its temperature is lower than a first temperature or higher than a second temperature.
Semiconductor Energy Laboratory Co., Ltd.

new patent

Battery module including voltage sensing member having receptacle structure

Disclosed herein is a battery module including a battery cell stack configured to have a structure in which a plurality of battery cells or unit modules connected to each other in series and/or in parallel is stacked in the state in which each of the battery cells or the unit modules is stood on one side thereof, voltage sensing members provided with connecting terminals electrically connected to electrode terminal connection parts of the battery cells, which are located at the front and the rear of the battery cell stack, for detecting voltages of the battery cells or the unit modules, an upper case configured to have a structure for covering the end of one side of the battery cell stack and portions of upper and lower ends of the battery cell stack, the upper case being provided with mounting parts, into which the voltage sensing members are inserted and mounted, and a lower case configured to have a structure that is coupled to the upper case while covering the end of the other side of the battery cell stack and portions of the upper and lower ends of the battery cell stack, the lower case being provided at the front thereof with external input and output terminals, wherein each of the voltage sensing members is configured to have a receptacle structure in which each of the voltage sensing members is fitted onto a corresponding one of the electrode terminal connection parts from the upper part of each of the voltage sensing members, and each of the mounting parts is configured to have a structure in which the width of the mounting part is decreased in the direction in which a corresponding one of the electrode terminal connection parts is inserted.. .
Lg Chem, Ltd.

new patent

Nickel-zinc battery

Provided is a highly reliable nickel-zinc battery including a separator exhibiting hydroxide ion conductivity and water impermeability. The nickel-zinc battery includes a positive electrode containing nickel hydroxide and/or nickel oxyhydroxide; a positive-electrode electrolytic solution in which the positive electrode is immersed, the electrolytic solution containing an alkali metal hydroxide; a negative electrode containing zinc and/or zinc oxide; a negative-electrode electrolytic solution in which the negative electrode is immersed, the electrolytic solution containing an alkali metal hydroxide; a hermetic container accommodating the positive electrode, the positive-electrode electrolytic solution, the negative electrode, and the negative-electrode electrolytic solution; and the separator exhibiting hydroxide ion conductivity and water impermeability and disposed in the hermetic container so as to separate a positive-electrode chamber from a negative-electrode chamber.
Ngk Insulators, Ltd.

new patent

Nickel-zinc battery

Provided is a highly reliable nickel-zinc battery, which includes a separator exhibiting hydroxide ion conductivity and water impermeability. The separator is disposed in a hermetic container to separate a positive-electrode chamber from a negative-electrode chamber.
Ngk Insulators, Ltd.

new patent

Non-aqueous electrolyte secondary battery

The nonaqueous electrolyte secondary battery includes a positive electrode, a negative electrode, and a nonaqueous electrolytic solution and is characterized in that the nonaqueous electrolytic solution contains propylene carbonate and fluoroethylene carbonate, the positive electrode contains an oxide that contains lithium and one or more metallic elements m as a positive electrode active material, the one or more metallic elements m include at least one selected from the group consisting of cobalt and nickel, the negative electrode contains graphite as an active material, the negative electrode active material includes lithium and a lithium carbonate layer with a thickness of 1 μm or less on the surface thereof, and the ratio of the total lithium content a of the positive and negative electrodes to the metallic element m content mm of the oxide, a/mm, is greater than 1.01.. .
Sanyo Electric Co., Ltd.

new patent

Nonaqueous electrolyte battery, battery pack, and vehicle

According to one embodiment, a nonaqueous electrolyte battery includes a positive electrode, a negative electrode and a nonaqueous electrolyte. The negative electrode includes a titanium and niobium-containing composite oxide.
Kabushiki Kaisha Toshiba

new patent

Method of manufacturing all-solid-state battery

A method of manufacturing an all-solid-state battery includes a lamination step of laminating a deactivated lithium-containing negative electrode active material layer containing deactivated lithium, a solid electrolyte layer for the all-solid-state battery, and a positive electrode active material layer for the all-solid-state battery such that the solid electrolyte layer for the all-solid-state battery is disposed between the deactivated lithium-containing negative electrode active material layer and the positive electrode active material layer for the all-solid-state battery.. .
Toyota Jidosha Kabushiki Kaisha

new patent

Reinforced bipolar battery assembly

An article having (a) one or more stacks of a plurality of electrode plates include: (i) one or more bipolar plates having a substrate having an anode on one surface and a cathode on an opposing surface; (ii) a separator and a liquid electrolyte located between each of the electrode plates; (b) a first end plate having a first end plate internal reinforcement structure, attached at an end of the one or more stacks; (c) a second end plate having a second end plate internal reinforcement structure, attached at an opposing end of the one or more stacks as the first end plate; wherein the first end plate and the second end plate reinforce the plurality of electrode plates during a charge cycle, a discharge cycle, or both the charge cycle and the discharge cycle.. .
Advanced Battery Concepts, Llc

new patent

Microbial fuel cell

By a microbial fuel cell including: an anode electrode that includes, as a catalyst, current-generating bacteria supplied from soil or mud, and oxidizes an organic fuel supplied from soil or mud; and a cathode electrode that reduces oxygen supplied from air or water, the microbial fuel cell having an oxygen permeation restricting layer between the anode electrode and the cathode electrode facing each other, it is possible to provide, at low cost, a microbial fuel cell having high power generation performance due to direct power generation from soil or mud and capable of being thinned and miniaturized.. .
Sharp Kabushiki Kaisha

new patent

Membrane electrode assembly and electrochemical cell

In one embodiment, a membrane electrode assembly comprises a catalyst layer being porous and containing a catalyst material, the catalyst layer comprising a plurality of catalyst units each having a porous body structure or a laminated structure containing a void layer, and an electrolyte membrane adjacent to the porous catalyst layer. The catalyst unit bites into the electrolyte membrane, and an average biting ratio is not less than 10%, and not more than 80% of a thickness of the catalyst layer..
Kabushiki Kaisha Toshiba

new patent

Bipolar plate for low pressure feed electrode operation

A bipolar plate having side ports is described for use with an electrochemical cell. A side port having a high aspect ratio will have an effect on the partial pressure of the reactant gasses and prevent high pressure drop of the working fluid transport to the electrodes.
Xergy Inc.

new patent

Gas decomposition device and power generation device

A gas decomposition device 100 includes one or two or more membrane electrode assemblies 5, each including a solid electrolyte layer 2, an anode layer 3 stacked on a first side of the solid electrolyte layer 2, and a cathode layer 4 stacked on a second side of the solid electrolyte layer; and porous current collectors 8a, 8b, and 8c including continuous pores 1b, the membrane electrode assemblies being stacked with the porous current collector, the solid electrolyte layer being composed of a proton-conducting solid electrolyte, the porous current collectors including porous metal bodies 1, each of the porous metal bodies 1 including an alloy layer 12a having corrosion resistance on at least a surface of the porous metal body 1 facing the continuous pores, and the porous metal bodies forming gas channels 9a, 9b, and 9c that supply gases to the anode layer and the cathode layer.. .
Sumitomo Electric Industries, Ltd.

new patent

Nanotubular intermetallic compound catalyst for positive electrode of lithium air battery and preparing the same

Disclosed is a nanotubular intermetallic compound catalyst for a positive electrode of a lithium air battery and a method of preparing the same. In particular, a porous nanotubular intermetallic compound is simply prepared using electrospinning in which a dual nozzle is used, and, by using the same as a catalyst, a lithium air battery having enhanced discharge capacity, charge/discharge efficiency and lifespan is provided..
Postech Academy-industry Foundation

new patent

Positive electrode including discrete aluminum oxide nanomaterials and forming aluminum oxide nanomaterials

A positive electrode includes a lithium-based active material, a binder, a conductive filler, and discrete aluminum oxide nanomaterials. The aluminum oxide nanomaterials are mixed, as an additive, throughout the positive electrode with the lithium-based active material, the binder, and the conductive filler.
Gm Global Technology Operations Llc

new patent

Conductive carbon, electrode material including said conductive carbon, and electrode using said electrode material

Provided is conductive carbon that gives an electrical storage device having a high energy density. This conductive carbon includes a hydrophilic part, and the contained amount of the hydrophilic part is 10 mass % or more of the entire conductive carbon.
Nippon Chemi-con Corporation

new patent

Charge storage material, electrode active material and secondary battery

In the formulas, ar1 and ar2 are each independently a pyridine ring that forms together with two carbon atoms on a benzoquinone skeleton, or a derivative thereof. When used as electrode active materials, these charge storage materials are capable of providing high-performance batteries possessing a high capacity, high rate characteristics and high cycle characteristics..

new patent

Ion-conductive fused-ring quinone polymer, electrode active material and secondary battery

Wherein each x is independently a single bond or a divalent group, and a1 and a2 are each independently an aromatic hydrocarbon ring or an oxygen atom or sulfur atom-containing aromatic heterocycle that forms together with two carbon atoms on a benzoquinone skeleton. This polymer is a material having charge-storing properties which, when used as an electrode active material, is capable of providing a high-performance battery possessing high capacity, high rate characteristics and high cycle characteristics..

new patent

Nanostructured carbon electrode, methods of fabricating and applications of the same

Nanostructured carbon electrode usable for electrochemical devices and methods of fabricating the same. The method of fabricating a nanostructured carbon electrode includes providing a carbon material of polyaromatic hydrocarbon (pah), mixing the carbon material of pah with a surfactant in a solution to form a suspension thereof; depositing the suspension onto a substrate to form a layered structure; and sintering the layered structure at a temperature for a period of time to form a nanostructured carbon electrode having a film of pah..
Northwestern University

new patent

Electrode for nonaqueous electrolyte battery, nonaqueous electrolyte battery and battery pack

An electrode for a nonaqueous electrolyte battery according to the present embodiment includes: a current collector; and an active material layer that is formed on one surface or both surfaces of the current collector. The active material layer contains a fluorine-containing aromatic compound, in which at least one of hydrogen atoms bonded to the aromatic ring has been substituted by fluorine, at 0.01 mass % or more and 1.0 mass % or less..
Kabushiki Kaisha Toshiba

new patent

Lithium secondary battery

A lithium secondary battery includes a cathode electrode, an anode electrode, and a separation film installed between the cathode electrode and the anode electrode, wherein the cathode electrode includes a cathode active material containing lithium-metal oxide of which at least one of metals has a concentration gradient region between a core part and a surface part thereof, and the separation film includes a base film and a ceramic coating layer formed on at least one surface of the base film, such that it is possible to achieve a significantly improved effect in both of the lifespan property and penetration durability.. .
Sk Innovation Co., Ltd.

new patent

Electrode, nonaqueous electrolyte battery, battery pack and vehicle

According to one embodiment, an electrode is provided. The electrode includes an active material.
Kabushiki Kaisha Toshiba

new patent

Electrode, nonaqueous electrolyte battery, battery pack and vehicle

According to one embodiment, there is provided an electrode. The electrode includes an orthorhombic na-containing niobium titanium composite oxide as a first composite oxide and a second composite oxide represented by a general formula of li2+ana2+bti6o14, wherein −0.2≦a≦2 and −0.2≦b≦0.2..
Kabushiki Kaisha Toshiba

new patent

Porous electrode active material and secondary battery including the same

Provided are an electrode active material having a plurality of pores and a secondary battery including the same, and more particularly, a porous electrode active material including silicon-based oxide expressed by siox (0.5≦x≦1.2) and having a brunauer, emmett, and teller (bet) specific surface area ranging from 2 m2/g to 100 m2/g, and a secondary battery including a cathode including a cathode active material, a separator, an anode including an anode active material, and an electrolyte, in which the anode active material includes a porous electrode active material including silicon-based oxide expressed by siox (0.5≦x≦1.2) and having a bet specific surface area ranging from 2 m2/g to 100 m2/g.. .
Unist (ulsan National Institute Of Science And Technology)

new patent

Composite electrodes

The present invention pertains to an electrode-forming composition, to use of said electrode-forming composition in a process for the manufacture of a composite electrode, to said composite electrode and to a secondary battery comprising said composite electrode.. .
Commissariat A L' Energie Atomique Et Aux Energies Alternatives

new patent

Multivalent metal salts for lithium ion cells having oxygen containing electrode active materials

A material and method for a surface-treated electrode active material for use in a lithium ion battery is provided. The surface-treated electrode active material includes an ionically conductive layer comprising a multivalent metal present as a direct conformal layer on at least a portion of the outer surface of the electrode active material.
A123 Systems, Llc

new patent

Positive electrode of lithium ion secondary battery, and manufacturing lithium ion secondary battery

In a method of manufacturing a lithium ion secondary battery, first, lithium nickel manganese oxide which is a positive electrode active material is exposed to fluorine-based gas to form a coating film containing amorphous lithium fluoride on a surface of the positive electrode active material. Next, a phosphate compound is added to the positive electrode active material on which the coating film containing the lithium fluoride is formed.
Toyota Jidosha Kabushiki Kaisha

new patent

Negative electrode for lithium ion secondary cell, lithium-ion secondary cell, mixture paste for negative electrode for lithium-ion secondary cell, and manufacturing negative electrode for lithium-ion secondary cell

A negative electrode for a lithium-ion secondary cell, the negative electrode including a layered body of a collector and a negative electrode active material layer containing an alloy-based material (a) containing silicon or tin as a constituent element, a carbon coating (c) that covers the surface of the alloy-based material (a), carbon particles (b), and a binder (d), wherein the negative electrode for a lithium-ion secondary cell is characterized in that the total pore volume and average pore diameter of the carbon particles (b), as measured by nitrogen gas adsorption, satisfy the ranges of 1.0×10−2 to 1.0×10−1 cm3/g and 20 to 50 nm, respectively. The negative electrode for a lithium-ion secondary cell, and a lithium-ion secondary cell in which such a negative electrode for a lithium-ion secondary cell is used, have a high capacity and excellent cycle characteristics..
Shin-etsu Chemical Co., Ltd.

new patent

Electrode for nonaqueous electrolyte battery, nonaqueous electrolyte battery including the same, and battery pack

An electrode for a nonaqueous electrolyte battery of the embodiment includes a current collector; and an active material layer which includes an active material and is formed on the current collector. The active material layer includes at least one of a silicon particle and a silicon oxide particle.
Kabushiki Kaisha Toshiba

new patent

Electrode active material, electrode and secondary battery including the same, and preparing the electrode active material

An electrode active material including a secondary particle, the secondary particle including: a plurality of primary particles including a silicon-containing material; an electrically conductive material; and a chemically cross-linked water-insoluble polymer. Also an electrode, and a secondary battery, both of which include the electrode active material, and a method of preparing the electrode active material..
Samsung Sdi Co., Ltd.

new patent

Electrode, nonaqueous electrolyte battery, battery pack, automobile, and vehicle

According to one embodiment, an electrode is provided. The electrode includes an active material containing-layer.
Kabushiki Kaisha Toshiba

new patent

Method for forming positive electrode for thin film lithium-ion rechargeable battery, positive electrode for thin film lithium-ion rechargeable battery, and thin film lithium-ion rechargeable battery

A method for forming a positive electrode for a thin film lithium-ion rechargeable battery includes forming a positive electrode power collection layer, forming a first positive electrode active material layer by covering the positive electrode power collection layer with a first positive electrode active material that contains lithium cobalt oxide, forming a second positive electrode active material layer that has a thickness of 20 nm or greater and 60 nm or less by covering the first positive electrode active material layer with a second positive electrode active material that contains aluminum and lithium cobalt oxide, and heating a lamination body that includes the positive electrode power collection layer, the first positive electrode active material layer, and the second positive electrode active material layer.. .
Ulvac, Inc.

new patent

Positive electrode for non-aqueous electrolyte secondary battery and non-aqueous electrolyte secondary battery using the same

Provided is a positive electrode for a non-aqueous electrolyte secondary battery, with which the increase in dc resistance of a non-aqueous electrolyte secondary battery after cycles is suppressed. According to one aspect of the present invention, a positive electrode for a non-aqueous electrolyte secondary battery includes a lithium transition metal oxide that contains an element that belongs to group 6 of the periodic table and a boron-containing carbon material as a conductive agent.
Sanyo Electric Co., Ltd.

new patent

Apparatus and processing battery electrodes

An apparatus for processing battery electrodes includes: a microwave applicator cavity with slots on opposite ends to allow a continuous sheet to move through the cavity in a first direction; a processing chamber constructed of microwave-transparent material, disposed within the applicator cavity and surrounding the continuous sheet, the processing chamber having slots to allow the continuous sheet to pass through it; a microwave power supply to deliver power to the applicator cavity; a source of heated gas providing a controlled gas flow through the processing chamber in a direction opposite the first direction; and, at least one non-contacting temperature measuring device positioned to measure a surface temperature at a selected location on the continuous sheet as it passes through the processing chamber. The apparatus is particularly suited for removing polar solvents from porous electrode coatings.

new patent

Lithiated transition metal oxides

Process for the fabrication of an electrode structure comprising an electrochemically active material suitable for use in an energy storage device. The method includes electrodepositing the electrochemically active material onto an electrode in electrodeposition bath containing a non-aqueous electrolyte.
Xerion Advanced Battery Corporation

new patent

Nonaqueous secondary battery

In a nonaqueous secondary battery including a pressure-operated current interrupt device, a ratio (vt/cr) of a sum vt (cm3) of an effective pore volume vp of the positive electrode active material layer, an effective pore volume vn of the negative electrode active material layer, and a pore volume vs of the separator to a volume cr (cm3) of a remaining space in the battery case is 0.92 to 1.05. The volume cr of the remaining space in the battery case is calculated by subtracting a volume ce of the electrode body, a volume cna of the nonaqueous electrolytic solution, and a volume cc of auxiliary components from a volume ct of the battery case.
Toyota Jidosha Kabushiki Kaisha

new patent

Nonaqueous electrolyte secondary battery

A nonaqueous electrolyte secondary battery includes a conductive outer can, an electrode body in the outer can, a conductive seal plate tightly closing an open end of the outer can, and a cathode external terminal on the seal plate. The battery further includes a current cutoff mechanism (cid).
Panasonic Corporation

new patent

Current interruption device and electricity storage device including same

A current interruption device includes: a first conducting plate 90 configured to be electrically connected to a terminal; and a second conducting plate 88 disposed to face the first conducting plate and configured to be electrically connected to the electrode assembly. A center portion of the first conducting plate 90 and a center portion of the second conducting plate 88 are joined by a first welding portion.
Kabushiki Kaisha Toyota Jidoshokki

new patent

Electrode stack structure and battery having electrode stack structure

An electrode stack structure including a plurality of stacked electrode layers including electrode layers having multiple tabs, wherein the multiple tabs include a first tab connected to a first lead; and a second tab that is spaced apart from the first tab, and wherein second tabs of electrode layers having a same polarity are electrically connected to each other.. .
Samsung Electronics Co., Ltd.

new patent

Non-aqueous electrolyte secondary battery

A separator includes a base material layer and a heat resistance layer. The heat resistance layer includes, in a direction of thickness of the heat resistance layer, a central portion and a first end portion and a second end portion between which the central portion lies.
Toyota Jidosha Kabushiki Kaisha

new patent

Separator structure body for use in zinc secondary battery

Provided is a separator structure for use in a zinc secondary battery. The separator structure includes a ceramic separator composed of an inorganic solid electrolyte and having hydroxide ion conductivity and water impermeability, and a peripheral member disposed along the periphery of the ceramic separator and composed of at least one of a resin frame and a resin film.
Ngk Insulators, Ltd.

new patent

High voltage battery submodule

Provided are a high voltage battery submodule capable of protecting a high voltage battery cell from external force and preventing a contact failure from occurring between an electrode tab and a voltage sensing terminal. A frame includes an upper frame which accommodates a pair of high voltage battery cells therein, a plurality of intermediate frames which are disposed under the upper frame and accommodate a pair of high voltage battery cells therein, and a lower frame which are disposed under a lowermost intermediate frame and accommodate a pair of high voltage battery cells, and a cell cover is disposed on only any one of an upper side or a lower side of each of a plurality of high voltage battery cells in the frame..
Hyundai Mobis Co., Ltd.

new patent

Electrochemical cells and methods of manufacturing the same

Electrochemical cells and methods of making electrochemical cells are described herein. In some embodiments, an apparatus includes a multi-layer sheet for encasing an electrode material for an electrochemical cell.
24m Technologies, Inc.

new patent

Methods for fabricating an organic electro-luminescence device and flexible electric device

A method for fabricating an organic electro-luminescence device, comprising: forming a first conductive layer comprising a first electrode and a contact pattern on a substrate; forming a first mask on the first conductive layer, the first mask comprising an opening for exposing a portion of the first electrode and a portion of the contact pattern; forming a patterned organic functional layer by shielding of a second mask, the patterned organic functional layer covering the first mask and the first electrode exposed by the first mask, and the second mask being disposed over the first mask to shield the portion of the contact pattern exposed by the opening; forming a second conductive layer and patterning the second conductive layer by removing the first mask and a portion of the second conductive layer on the first mask to form a second electrode electrically connected to the contact pattern.. .
Industrial Technology Research Institute

new patent

Display device

A display device includes: pixel electrodes corresponding to pixels; an insulating layer provided so as to overlie peripheral edge portions of the pixel electrodes; a light-emitting layer provided so as to be stacked on and in contact with each of the pixel electrodes; a first common electrode stacked on the light-emitting layer so as to be in contact therewith and provided so as to overlie the insulating layer; a light transmissive layer stacked on the first common electrode above the pixel electrodes, the light transmissive layer avoiding stacking thereof on the first common electrode above the insulating layer; and a second common electrode stacked on the light transmissive layer above the pixel electrodes and stacked on the first common electrode so as to be in contact therewith above the insulating layer.. .
Japan Display Inc.

new patent

Light-emitting device and lighting device

A highly reliable light-emitting device which includes an organic el element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer.
Semiconductor Energy Laboratory Co., Ltd.

new patent

Display device and manufacturing the same

A display device a display region arranged with a plurality of pixels in a matrix shape, wherein each of the plurality of pixels includes a first electrode including a first conducting layer on the first conducting layer and comprised from mo or a mo alloy, a second conducting layer comprised from ag or an ag alloy, and a third conducting layer on the second conducting layer and comprised from a metal oxide having conducting properties, the first electrode being arranged corresponding to each of the pixels respectively, a light emitting layer above the third conducting layer and emitting light according to a current supply, and a second electrode above the light emitting layer and allowing at least a part of the light from the light emitting layer to pass through.. .
Japan Display Inc.

new patent

Organic light emitting display device and lighting vehicles using the same

Discussed is an organic light emitting display device. The organic light emitting display device according to an embodiment includes a first emission part between a first electrode and a second electrode and a second emission part on the first emission part.
Lg Display Co., Ltd.

new patent

Method and manufacturing semiconductor elements

The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure.
Kabushiki Kaisha Toshiba

new patent

Photoelectric conversion element, solid-state imaging device, and organic light-absorbing material

A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode and the second electrode. The photoelectric conversion material layer contains a substance formed of the following structural formula (1)..
Sony Corporation

new patent

Light emitting diode

A light emitting diode includes an insulating substrate, a first mgo layer, a semiconductor carbon nanotube layer, a second mgo layer, a functional dielectric layer, a first electrode, and a second electrode. The semiconductor carbon nanotube layer has a first surface and a second surface.
Hon Hai Precision Industry Co., Ltd.

new patent

Method of manufacturing organic light emitting display device

An organic light emitting display device having high transmittance with respect to external light and a method of manufacturing the same. The organic light emitting display device includes a substrate; a plurality of pixels formed on the substrate, each of the pixels including a first region that emits light and a second region that transmits external light; a plurality of thin film transistors disposed in the first region of each pixel; a plurality of first electrodes disposed in the first region of each pixel and electrically connected to the thin film transistors, respectively; a second electrode formed opposite to the plurality of first electrodes and comprising a plurality of transmission windows corresponding to the second regions; and an organic layer formed between the first electrodes and the second electrode.
Samsung Display Co., Ltd.

new patent

Method for fabricating large metal nanofiber electrode array using aligned metal nanofiber

Disclosed is a largescale nanofiber electrode array using aligned metal nanofiber, which includes preparing a metal precursor/organic polymer complex solution, forming an aligned metal/polymer complex nanofiber pattern with a continuously connected shape on a substrate to by injecting the solution with an electric field aided robotic nozzle printer and moving the substrate, and performing thermal treatment on the complex nanofiber pattern to form an aligned nanofiber metal pattern. Accordingly, the position and direction of the metal nanofiber pattern can be accurately controlled, and the metal nanofiber pattern can be aligned in a desired direction..
Postech Academy- Industry Foundation

new patent

Socket structure for three-dimensional memory

Socket structures that are configured to use area efficiently, and methods for providing socket regions that use area efficiently, are provided. The staircase type contact area or socket region includes dielectric layers between adjacent planar electrodes that partially cover a portion of a planar electrode that does directly underlie an adjacent planar electrode.
Sony Corporation

new patent

Semiconductor device, related manufacturing method, and related electronic device

A method for manufacturing a semiconductor device may include the following steps: preparing a substrate; preparing a first insulating layer on the substrate; preparing an electrode in the first insulating layer; preparing a second insulating layer on the first insulating layer; removing (e.g., using a dry etching process or a wet etching process) a portion of the second insulating layer to form a hole that at least partially exposes the electrode; providing a phase change material layer that may cover the electrode; and removing (e.g., using a sputtering process such as an argon sputtering process), a portion of the phase change material layer positioned inside the hole to form a phase change member that may expose a first portion of (a top side of) the electrode and may directly contact a second portion of (the top side of) the electrode.. .
Semiconductor Manufacturing International (shanghai) Corporation

new patent

Magnetic tunnel junctions, methods used while forming magnetic tunnel junctions, and methods of forming magnetic tunnel junctions

A method used while forming a magnetic tunnel junction comprises forming non-magnetic tunnel insulator material over magnetic electrode material. The tunnel insulator material comprises mgo and the magnetic electrode material comprises co and fe.
Micron Technology, Inc.

new patent

Method of manufacture for single crystal capacitor dielectric for a resonance circuit

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material.
Akoustis, Inc.

new patent

Air gap in baw top metal stack for reduced resistive and acoustic loss

Embodiments of a bulk acoustic wave (baw) device including a high conductivity electrode are disclosed. In some embodiments, a baw device includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, and a second electrode on a second surface of the piezoelectric layer opposite the first electrode.
Triquint Semiconductor, Inc.

new patent

Trilayer josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits

A technique relates to a trilayer josephson junction structure. A dielectric layer is on a base electrode layer that is on a substrate.
International Business Machines Corporation

new patent

Mechanically tunable superconducting qubit

A system for adjusting qubit frequency includes a qubit device having a josephson junction and a shunt capacitor coupled to electrodes of the josephson junction. A cantilevered conductor is separated from the shunt capacitor by a spacing.
International Business Machines Corporation

new patent

Thermoelectric module

A thermoelectric module mounted on a non-flat surface of a heating source component to reduce thermal resistance to enhance thermoelectric generation efficiency is provided. The thermoelectric module includes at least one electrode component having a first electrode plate and a second electrode plate connected to be pivoted with respect to each other.
Hyundai Motor Company

new patent

Semiconductor light emitting device and manufacturing same

According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; a p-side electrode; an n-side electrode; a first p-side pillar; a first n-side pillar; a first insulating layer; a fluorescer layer; a second insulating layer; a p-side interconnect; and an n-side interconnect. The second insulating layer is provided as one body in at least a portion of an outer side of a side surface of the first insulating layer and at least a portion of an outer side of a side surface of the fluorescer layer..
Kabushiki Kaisha Toshiba

new patent

Semiconductor light emitting device

A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween.
Kabushiki Kaisha Toshiba

new patent

Light-emitting diode with improved light extraction efficiency

According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an n-layer, a light-emitting layer, and a p-layer formed on a substrate; an n-type electrode formed on the n-layer; and a p-type electrode formed on the p-layer, wherein the n-type electrode and the p-type electrode include a pad electrode and a dispersion electrode, and the n-type electrode and/or the p-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency.
Seoul Viosys Co., Ltd.

new patent

Light emitting device

One embodiment provides a light emitting device comprising: a substrate; a first electrode arranged on the substrate; a light emitting structure arranged on the first electrode and including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers; and a second electrode arranged on the second semiconductor layer, wherein the second electrode includes: a pad electrode; and a branch electrode extending from the pad electrode and having a hexagonal structure for enabling an upper surface of the second semiconductor layer to be exposed in a hexagonal shape.. .
Lg Innotek Co., Ltd.

new patent

Semiconductor light emitting device

A semiconductor light emitting device includes a semiconductor stack including a first conductive semiconductor layer including a first surface, a second conductive semiconductor layer including a second surface opposite to the first surface, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a through hole disposed through the semiconductor stack. The semiconductor light emitting device further includes a contact layer connected to the first conductive semiconductor layer, disposed in the through hole, and disposed through the semiconductor stack, a first electrode layer connected to the contact layer, and a second electrode layer disposed on the second surface, and including a pad forming portion on which the semiconductor stack is not disposed.
Samsung Electronics Co., Ltd.

new patent

Light-emitting device

A light-emitting device includes a substrate that is capable of transmitting light, a conductive layer that includes a first conductive portion provided on the substrate and a second conductive portion which is provided on the substrate so as to be adjacent to the first conductive portion, the second conductive portion is thinner than the first conductive portion. A light emitting layer is provided on the first conductive portion.
Kabushiki Kaisha Toshiba

new patent

Light-emitting diode device

A light-emitting element, includes a substrate; a light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, having three sides and three vertexes; a first electrode formed on the light-emitting stack and located near a first vertex of the three vertexes of the triangular upper surface; and a second electrode formed on the light-emitting stack; including two second electrode pads respectively located near other two vertexes of the three vertexes; and a second electrode extending part extending from the second electrode pads, disposed along the three sides of the triangular upper surface.. .
Epistar Corporation

new patent

Semiconductor light-emitting device

A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a magnetic layer on the light-emitting structure. The magnetic layer may have at least one magnetization direction that is parallel to an upper surface of the active layer.
Samsung Electronics Co., Ltd.

new patent

Solar cell

This solar cell is provided with a substrate (11), a first electrode layer (12) which is arranged on the substrate (11), a p-type czts light absorption layer (13) which is arranged on the first electrode layer (12) and which contains copper, zinc, tin, and group vi elements including sulfur and selenium, and an n-type second electrode layer (15) which is arranged on the czts light absorption layer (13), wherein the sulfur concentration in the group vi elements in the czts light absorption layer (13) increases, in the depth direction, from the side facing the second electrode layer (15) towards the side facing the first electrode layer (12).. .
Solar Frontier K.k.

new patent

Solar cell module

A solar cell module includes first and second solar cells each including a semiconductor substrate, and first electrodes and second electrodes that have different polarities on the semiconductor substrate and extend in a first direction, and a plurality of conductive lines extended in the second direction, disposed on the semiconductor substrate of each of the first and second solar cells, and connected to the first electrodes or the second electrodes of each of the first and second solar cells, thereby connecting in series the first and second solar cells in the second direction. Each conductive line includes an uneven portion, in a thickness direction of the semiconductor substrate, a remaining portion except a portion of the conductive line connected to the first electrodes or the second electrodes..
Lg Electronics Inc.

new patent

Photoelectric conversion element, solar cell, solar cell module, and solar power generating system

A photoelectric conversion element of an embodiment includes a substrate, a transparent first electrode on the substrate, a second electrode, and a light absorbing layer of a homo-junction type interposed between the first electrode and the second electrode. The light absorbing layer includes a p-type region on the second electrode side and an n-type region on the first electrode side.
Kabushiki Kaisha Toshiba

new patent

Photoelectric conversion element, solar battery, solar battery module, and solar power generation system

A photoelectric conversion element of an embodiment includes a first electrode, a second electrode, and a light-absorbing layer containing a chalcopyrite-type compound containing a group ib element, a group iiib element, and a group vib element between the first electrode and the second electrode. A region in which concentration of the group ib element in the light-absorbing layer is from 0.1 to 10 atom %, both inclusive, is included in a region up to a depth of 10 nm in a direction from a principal plane of the light-absorbing layer on a side of the second electrode to a side of the first electrode..
Kabushiki Kaisha Toshiba

new patent

Semiconductor device and manufacturing the same

A semiconductor device is provided. The semiconductor device includes a substrate; a well region disposed in the substrate; an isolation structure surrounding an active region in the well region; a source region disposed in the well region; a drain region disposed in the well region; a second conductive type first doped region disposed in the well region and disposed along a periphery of the active region; a second conductive type second doped region disposed in the well region and under the source region, the drain region and the second conductive type first doped region, wherein the second conductive type second doped region is in direct contact with the second conductive type first doped region; a source electrode; a drain electrode and a gate electrode.
Vanguard International Semiconductor Corporation

new patent

Semiconductor device

A semiconductor device includes a first pillar-shaped semiconductor layer, a first selection gate insulating film, a first selection gate, a first gate insulating film, a first contact electrode, a first bit line connected to an upper portion of the first pillar-shaped semiconductor layer and an upper portion of the first contact electrode, a second pillar-shaped semiconductor layer, a layer including a first charge storage layer, a first control gate, a layer including a second charge storage layer and formed above the first control gate, a second control gate, a second gate insulating film, a second contact electrode having an upper portion connected to an upper portion of the second pillar-shaped semiconductor layer, and a first lower internal line that connects a lower portion of the first pillar-shaped semiconductor layer and a lower portion of the second pillar-shaped semiconductor layer.. .
Unisantis Electronics Singapore Pte. Ltd.

new patent

Display device

According to one embodiment, a display device includes a first light shielding layer, a second light shielding layer, a first semiconductor layer, a second semiconductor layer, a gate line, a first source line, a second source line, a switching element, and a pixel electrode, wherein an area in which the first light shielding layer and the pixel electrode are opposed to each other and an area in which the second light shielding layer and the pixel electrode are opposed to each other are equal in size.. .
Japan Display Inc.

new patent

Amplifiers including tunable tunnel field effect transistor pseudo resistors and related devices

Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a tunnel field effect transistor (“tfet”) pseudo resistor that exhibits bi-directional conductivity.
Samsung Electronics Co., Ltd.

new patent

Field-effect transistor, and memory and semiconductor circuit including the same

Provided is a field-effect transistor (fet) having small off-state current, which is used in a miniaturized semiconductor integrated circuit. The field-effect transistor includes a thin oxide semiconductor which is formed substantially perpendicular to an insulating surface, a gate insulating film formed to cover the oxide semiconductor, and a gate electrode which is formed to cover the gate insulating film.
Semiconductor Energy Laboratory Co., Ltd.

new patent

Vertical slit transistor with optimized ac performance

A vertical slit transistor includes raised source, drain, and channel regions in a semiconductor substrate. Two gate electrodes are positioned adjacent respective sidewalls of the semiconductor substrate.
International Business Machines Corporation

new patent

Semiconductor device

According to one embodiment, a semiconductor device includes a first element isolating area, a first element area surrounding the first element isolating area, a second element isolating area surrounding the first element area a first gate electrode provided on and across the first element isolating area, the first element area, and the second element isolating area, and a second gate electrode isolated from the first gate electrode and provided on and across the first element isolating area, the first element area, and the second element isolating area.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device

A semiconductor device of an embodiment includes an sic layer having a first and a second plane, an n-type first sic region in the sic layer, p-type second sic regions between the first sic region and the first plane, n-type third sic regions between the second sic regions and the first plane, a gate electrode provided between two p-type second sic regions, a gate insulating film provided between the gate electrode and the second sic regions, a metal layer provided between two p-type second sic regions, and having a work function of 6.5 ev or more, and a first electrode electrically connected to the metal layer, and a second electrode, the sic layer provided between the first electrode and the second electrode, and a part of the first sic region is disposed between the gate insulating film and the metal layer.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device

A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type that is between the first electrode and the second electrode. A second semiconductor region is adjacent to the first semiconductor region along a first direction and includes a second conductivity type material.
Kabushiki Kaisha Toshiba

new patent

Semiconductor device and a making a semiconductor device

A semiconductor device and a method of making a semiconductor device. The device includes a semiconductor substrate having a first conductivity type, a layer of doped silicon located on the substrate, a trench extending into the layer of silicon, and a gate electrode and gate dielectric located in the trench.
Nxp B.v.

new patent

Semiconductor device

A semiconductor device according to an embodiment includes a sic layer having a first plane and a second plane, a first sic region of a first conductivity type which is provided in the sic layer, first and second pillar regions of a second conductivity type, third and fourth pillar regions of a second conductivity type which are provided between the first and second pillar regions and the first plane, a gate electrode provided between the third pillar region and the fourth pillar region, first and second body regions of the second conductivity type, a gate insulating film, fifth and sixth pillar regions provided between the third and fourth pillar regions and the gate electrode, first and second source regions of the first conductivity type.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device

A semiconductor device according to an embodiment includes a conductive region including titanium (ti), oxygen (o), at least one first element from zirconium (zr) and hafnium (hf), and at least one second element from vanadium (v), niobium (nb), and tantalum (ta), an n-type first sic region, a p-type second sic region provided between the conductive region and the n-type first sic region, a gate electrode, and a gate insulating layer provided between the conductive region, the p-type second sic region, the n-type first sic region, and the gate electrode.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device

A semiconductor device includes a sic layer having a first surface, a gate insulating film on the first surface, a gate electrode on the gate insulating film, a first sic region of a first conductivity type in the sic layer, a second sic region of a second conductivity type in the first sic region, a third sic region of the first conductivity type in the second sic region, wherein a boundary between the second sic region and the third sic region, and the first surface forms a first angle, and a fourth sic region of the first conductivity type in the third sic region, having an impurity concentration of the first conductivity type higher than that of the third sic region, wherein a boundary between the third sic region and the fourth sic region, and the first surface forms a second angle that is smaller than the first angle.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device

A semiconductor device includes a first nitride semiconductor layer, a source electrode on the first nitride semiconductor layer, a drain electrode on the first nitride semiconductor layer, a gate electrode on the first nitride semiconductor layer and between the source electrode and the drain electrode, a gate field plate electrode that is separated from the first nitride semiconductor layer, and includes one end in direct contact with the gate electrode, and the other end positioned between the gate electrode and the drain electrode, a first interlayer insulating film that is separated from the gate electrode and is between the gate field plate electrode and the first nitride semiconductor layer, and a second interlayer insulating film that is between the gate electrode and the first interlayer insulating film and has a dielectric constant higher than a dielectric constant of the first interlayer insulating film.. .
Kabushiki Kaisha Toshiba

new patent

High electron mobility transistor and forming the same using atomic layer deposition technique

A hemt made of nitride semiconductor materials is disclosed. The hemt includes the gan channel layer, the inaln barrier layer, and the n-type gan regions formed beneath the source electrode and the drain electrode at a temperature such that the inaln barrier layer in the crystal quality thereof is not degraded, lower than 800° c.
Sumitomo Electric Industries, Ltd.

new patent

Electronical device

Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer.
Electronics And Telecommunications Research Institute

new patent

Semiconductor device and manufacturing a semiconductor device

A semiconductor device includes a substrate, a first layer above the substrate and including a nitride semiconductor layer of a first conductivity type, a second layer on the first layer and including a nitride semiconductor layer of the first conductivity type containing al, an insulating film on the upper surface of the second layer in a first region of the upper surface of the second layer, a third layer on the upper surface of the second layer in a second region of the upper surface of the second layer, the third layer including a nitride semiconductor layer of a second conductivity type, the third layer including a first portion in contact with the second layer and a second portion on the first portion, and an electrode on the second portion. A width of the first portion is larger than that of the second region and that of the first portion..
Kabushiki Kaisha Toshiba

new patent

Semiconductor device

A semiconductor device includes a semiconductor substrate which includes a first surface, a second surface, and an end portion, the semiconductor substrate including a first region of a p-type and a second region of an n-type provided in a corner portion of the semiconductor substrate between the first surface and the end surface, a nitride semiconductor layer on the first surface, and an electrode on the nitride semiconductor layer.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device

A semiconductor device according to an embodiment includes a first nitride semiconductor layer; a source electrode provided on the first nitride semiconductor layer; a drain electrode provided on the first nitride semiconductor layer; a gate electrode provided between the source electrode and the drain electrode; a first film provided between the source electrode and the gate electrode and between the gate electrode and the drain electrode; and a second film provided on the first film. The first film is provided on the first nitride semiconductor layer.
Kabushiki Kaisha Toshiba

new patent

Field effect transistor

A field-effect transistor (a gan-based hfet) includes a gate electrode, a gate electrode pad, a first wiring line connecting one end of the gate electrode and the gate electrode pad, a second wiring line connecting the other end of the gate electrode and the gate electrode pad, and a resistance element that is connected to the first wiring line and is capable of adjusting the impedance of the first wiring line.. .
Sharp Kabushiki Kaisha

new patent

Semiconductor device and manufacturing the same

A semiconductor device includes: a substrate; a nitride semiconductor film on the substrate; a schottky electrode on the nitride semiconductor film; a first insulating film on the nitride semiconductor film, contacting at least part of a side surface of the schottky electrode, forming an interface with the nitride semiconductor film and formed of sin; and a second insulating film covering the schottky electrode and the first insulating film and formed of alo whose atomic layers are alternately disposed.. .
Mitsubishi Electric Corporation

new patent

Semiconductor device and driving same

A semiconductor device according to an embodiment includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type, a first electrode connected to the second semiconductor layer and the fourth semiconductor layer, a second electrode facing the second semiconductor layer with an insulating film interposed, a fifth semiconductor layer of the second conductivity type, a sixth semiconductor layer of the first conductivity type, a seventh semiconductor layer of the second conductivity type, a third electrode connected to the fifth semiconductor layer and the seventh semiconductor layer, and a fourth electrode facing the fifth semiconductor layer with an insulating film interposed.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device and inverter including the semiconductor device

A semiconductor device includes a conductivity type drain layer, a conductivity type drift layer, conductivity type base regions located in an upper surface of the drift layer, a conductivity type source region which is disposed inside each of the base regions and is spaced apart from the periphery of the base region, and a channel region is formed between the source region and the periphery of the base region. The semiconductor device further includes a gate insulating layer covering the channel region, a gate electrode which is located on the gate insulating layer and faces the channel region, a plurality of conductivity type column regions, each extends from the plurality of base regions to the drain layer in the drift layer, a trap level forming region in the drift layer, a drain electrode electrically connected to the drain layer, and a source electrode electrically connected to the source region..
Rohm Co., Ltd.

new patent

Array substrate for liquid crystal display device and manufacturing the same

An array substrate for a liquid crystal display device includes a substrate; a semiconductor layer on the substrate; a gate electrode on the semiconductor layer; source and drain electrodes that are on and contact the semiconductor layer; and an oxide layer that corresponds to the semiconductor layer and is on the gate electrode.. .
Lg Display Co., Ltd.

new patent

Semiconductor device

A semiconductor device includes a fin-shaped semiconductor layer and a pillar-shaped semiconductor layer on the fin-shaped semiconductor layer. A metal gate line is connected to a metal gate electrode and extends in a direction perpendicular to a direction that of the fin-shaped semiconductor layer.
Unisantis Electronics Singapore Pte. Ltd.

new patent

Trench schottky rectifier device and manufacturing the same

A method for fabricating a trench schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity type.
Pfc Device Holdings Ltd

new patent

Semiconductor device

A semiconductor device according to an embodiment includes a semiconductor region, a gate electrode, and a first gate insulating film provided between the semiconductor region and the gate electrode and containing a material having a chemical composition expressed by (sio2)n(si3n4)m (where n and m are positive integers), in the material, at least one silicon atom being bonded with at least one oxygen atom and at least one nitrogen atom.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor structure

A semiconductor structure is disclosed. The semiconductor structure includes a substrate, and an interlayer dielectric disposed on the substrate which has agate structure therein.
United Microelectronics Corp.

new patent

Method of forming high electron mobility transistor

A high electron mobility transistor (hemt) includes a first iii-v compound layer. A second iii-v compound layer is disposed on the first iii-v compound layer and is different from the first iii-v compound layer in composition.
Taiwan Semiconductor Manufacturing Company, Ltd.

new patent

Semiconductor device

A semiconductor device includes a silicon carbide layer having first and second surfaces, a first insulating film on the first surface, a first electrode on the first insulating film, a first silicon carbide region of a first conductivity type in the silicon carbide layer, a second silicon carbide region of a second conductivity type in the first silicon carbide region, a third silicon carbide region of the first conductivity type in the second silicon carbide region, a second electrode on the second surface, which contains metal, silicon, and carbon, and a third electrode in contact with the third silicon carbide region, which contains metal, silicon, and carbon, and has a carbon concentration higher than a carbon concentration of the second electrode.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device with stripe-shaped trench gate structures and gate connector structure

A semiconductor device includes a transistor cell with a stripe-shaped trench gate structure that extends from a first surface into a semiconductor body. A gate connector structure at a distance to the first surface is electrically connected to a gate electrode in the trench gate structure.
Infineon Technologies Ag

new patent

Thin film transistor panel having an etch stopper on semiconductor

A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.. .
Samsung Display Co., Ltd.

new patent

Semiconductor device

According to embodiments, a semiconductor device includes a first laminated nitride semiconductor layer in which first nitride semiconductor layers and second nitride semiconductor layers are alternately laminated; a third nitride semiconductor layer; a fourth nitride semiconductor layer; a drain electrode; a source electrode; and a gate electrode. The first nitride semiconductor layer is carbon-containing gallium nitride.
Kabushiki Kaisha Toshiba

new patent

Semiconductor device and manufacturing the same

A semiconductor device according to embodiments includes a p-type sic region, a gate insulating film disposed on the p-type sic region, and a gate electrode disposed on the gate insulating film and including a p-type impurity and 3c-sic.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device and manufacturing the same

Provided is a semiconductor device according to an embodiment including: a first electrode; a second electrode; a third electrode provided between the first electrode and the second electrode; a first insulating film provided between the third electrode and the second electrode; a silicon carbide layer provided between the first insulating film and the second electrode; a first silicon carbide region provided between the third electrode and the second electrode, the first silicon carbide region being provided in the silicon carbide layer; a second silicon carbide region provided between the third electrode and the first silicon carbide region, the second silicon carbide region being provided in the silicon carbide layer; a third silicon carbide region provided between the third electrode and the second silicon carbide region, the third. Silicon carbide region being provided in the silicon carbide layer; a fourth silicon carbide region provided between the third silicon carbide region and the second silicon carbide region, the fourth silicon carbide region being provided in the silicon carbide layer; and a fourth electrode provided between the first electrode and the fourth silicon carbide region, the fourth electrode being provided laterally adjacent to the third silicon carbide region, the fourth electrode containing a metal silicide, a first distance between the first electrode and a first interface between the fourth electrode and the fourth silicon carbide region being longer than a second distance between the first electrode and a second interface between the third silicon carbide region and the fourth silicon carbide region, and a third distance between a third interface between the fourth electrode and the first electrode and a fourth interface between the third silicon carbide region and the fourth silicon carbide region being shorter than a fourth distance between the fourth interface and a fifth interface between the third silicon carbide region and the first electrode..
Kabushiki Kaisha Toshiba

new patent

Semiconductor device

A semiconductor device according to an embodiment includes a sic layer having a first plane and a second plane, a gate insulating film provided on the first plane, a gate electrode provided on the gate insulating film, a first sic region of a first conductivity type provided in the sic layer, a second sic region of a second conductivity type provided in the first sic region, a third sic region of the first conductivity type provided in the second sic region, and a fourth sic region of the first conductivity type provided between the second sic region and the gate insulating film, the fourth sic region interposed between the second sic regions, and the fourth sic region provided between the first sic region and the third sic region.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device

A semiconductor device includes a semiconductor layer having a first surface and a second surface, a first electrode on the first surface, a second electrode on the second surface, a first semiconductor region of a first conductivity type in the semiconductor layer, a second semiconductor region of a second conductivity type in an element region of the semiconductor layer between the first semiconductor region and the first electrode, a third semiconductor region of the second conductivity type between the second semiconductor region and the first electrode, and a fourth semiconductor region of the second conductivity type in a termination region of the semiconductor layer inwardly of the first surface. A distance between the fourth semiconductor region and the second surface is greater than a distance between the second semiconductor region and the second surface..
Kabushiki Kaisha Toshiba

new patent

Multi-gate semiconductor devices with improved hot-carrier injection immunity

A semiconductor device includes a substrate having a first dopant type, a first gate electrode and second gate electrode formed over the substrate and spatially separated from each other, a first region of a second dopant type, having a pocket of the first dopant type, formed in the substrate between the first and second gate electrodes, the pocket being spaced apart from the first and second gate electrodes, a silicide block over the first region, a source region formed in the substrate on an opposing side of the first gate electrode from the first region and having the second dopant type, a drain region formed in the substrate on an opposing side of the second gate electrode from the first region, the drain region having the second dopant type, and a second pocket of the first dopant type formed in the drain region adjacent to the second gate electrode.. .
Freescale Semiconductor Inc.

new patent

Semiconductor device

This semiconductor device comprises a plurality of first conductive layers arranged above a substrate in a first direction intersecting an upper surface of the substrate. The conductive layers includes a portion in which positions of ends of the first conductive layers made different from each other in a second direction intersecting the first direction.
Kabushiki Kaisha Toshiba

new patent

Semiconductor device

A semiconductor device includes a sic layer that has a first surface and a second surface, a first electrode in contact with the first surface, a first sic region of a first conductivity type in the sic layer, a second sic region of a second conductivity type in the sic layer and surrounding a portion of the first sic region, a third sic region of the second conductivity type in the sic layer and surrounding the second sic region, the third sic region having an impurity concentration of the second conductivity type lower than that of the second sic region, and a fourth sic region of the second conductivity type in the sic layer between the second sic region and the third sic region, the fourth sic region having an impurity concentration of the second conductivity type higher than that of the second sic region.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device

Provided is a semiconductor device including a first electrode, a second electrode, a semiconductor substrate having a first plane, a second plane, a first conductivity-type first region, and a plurality of second conductivity-type second regions provided around the first electrode, the second regions being in contact with the first plane, at least a portion of the semiconductor substrate being provided between the first electrode and the second electrode, a first insulating film provided on or above the second regions, the first insulating film including positive charges, and a second insulating film provided on or above the second regions, second insulating film including negative charges.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device

To improve withstand capability of a semiconductor device during reverse recovery, provided is a semiconductor device including a semiconductor substrate having a first conduction type; a first region having a second conduction type that is formed in a front surface of the semiconductor substrate; a second region having a second conduction type that is formed adjacent to the first region in the front surface of the semiconductor substrate and has a higher concentration than the first region; a third region having a second conduction type that is formed adjacent to the second region in the front surface of the semiconductor substrate and has a higher concentration than the second region; an insulating film that covers a portion of the second region and the third region; and an electrode connected to the second region and the first region that are not covered by the insulating film.. .
Fuji Electric Co., Ltd.

new patent

Organic light-emitting diode display and manufacturing the same

An organic light-emitting diode (oled) display and a method of manufacturing the same are disclosed. In one aspect, the oled display includes a pixel disposed over a substrate, the pixel including a first region configured to generate an image and a second region configured to transmit external light.
Samsung Display Co., Ltd.

new patent

Display apparatus

A display apparatus includes a plurality of pixels disposed over a substrate. Each pixel includes a scan line extending along a first direction, a data line extending along a second direction which is different from the first direction.
Samsung Display Co., Ltd.

new patent

Organic light-emitting component and producing an organic light-emitting component

In various embodiments, an organic light-emitting organic is provided. The organic light-emitting component may include a first electrode layer, an organic functional layer structure over the first electrode layer, and a second electrode layer over the organic functional layer structure.
Osram Oled Gmbh

new patent

Organic light emitting diode display and manufacturing method thereof

An organic light emitting diode (oled) display includes: a substrate; a scan line on the substrate, extending in a first direction, and configured to transmit a scan signal; a data line on the substrate, extending in a second direction crossing the first direction, and configured to transmit a data voltage; a common voltage line in the same layer as the data line and configured to transmit a common voltage; a first electrode on the data line and an assistance member on the common voltage line, the first electrode and the assistance member being separated from each other in the first direction or the second direction; a second electrode on the first electrode and the assistance member; and an organic emission layer between the first electrode and the second electrode. The assistance member is separated from the data line in the first direction..
Samsung Display Co., Ltd.

new patent

Double-sided display substrate and manufacturing method thereof and display device

The present invention provides a double-sided display substrate and a manufacturing method thereof and a display device. The double-sided display substrate includes several sub-pixel units, the sub-pixel unit includes a front side light-emitting layer provided for front side displaying, a back side light-emitting layer provided for back side displaying, a pixel electrode layer, a common electrode layer, and a driving transistor, and the front side light-emitting layer and the back side light-emitting layer are interposed between a corresponding pixel electrode layer and the common electrode layer, respectively, the common electrode layer corresponding to the back side light-emitting layer and/or the front side light-emitting layer is disposed in the same layer as a gate electrode layer of the driving transistor.
Chengdu Boe Optoelectronics Technology Co., Ltd.

new patent

Display apparatus and manufacturing the same

A display apparatus includes a substrate having a plurality of pixel areas, and a pixel circuit including a storage capacitor and a plurality of thin film transistors (tfts) which are disposed in each pixel area. At least one of the plurality of tfts includes a semiconductor layer disposed on the substrate and including a first ion impurity, a source area and a drain area, which are spaced apart from each other, have a first depth from a surface of the semiconductor layer, and include a second ion impurity, a gate electrode disposed on the semiconductor layer between the source area and the drain area, and a bias wiring electrically connected to the semiconductor layer and disposed adjacent to at least one of the source area and the drain area..
Samsung Display Co., Ltd.

new patent

Array substrate and manufacturing the same

Embodiments of the invention provide an array substrate and a method of manufacturing the same. The method comprises: forming a gate electrode pattern, a gate insulation layer, an active layer pattern and an etching stopping layer on a substrate; forming a photoresist layer on the etching stopping layer; performing a single patterning process on the photoresist layer, such that photoresist in the first region is partially etched off, photoresist in the second region is completely etched off, and photoresist in the third region is completely remained; and performing a single etching process, such that residual photoresist in the first region and a portion of the etching stopping layer in the first region are etched off, and at the same time, a portion of the etching stopping layer and a portion of the gate insulation layer in the second region are etched off..
Boe Technology Group Co., Ltd.

new patent

Display device and manufacturing the same

A display device and a method of manufacturing the same are disclosed. In one aspect, the display device includes a flexible substrate, a thin film transistor (tft) disposed over the flexible substrate, a first electrode disposed over the tft, and a second electrode disposed over the first electrode.
Samsung Display Co., Ltd.

new patent

Flexible organic electroluminescent device and fabricating the same

A flexible organic electroluminescent device and a method for fabricating the same includes a substrate defined with a display area including a plurality of pixel regions and a non-display area at the outside thereof; a switching thin film transistor and a drive thin film transistor formed at the each pixel region on the substrate; an organic insulating layer deposited on the substrate including the switching thin film transistor and drive thin film transistor to expose a drain electrode of the drive thin film transistor; a first electrode formed in each pixel region on the inorganic insulating layer, and connected to the drain electrode of the drive thin film transistor; banks formed around each pixel region on the substrate including the first electrode and separated from one another; an organic light emitting layer separately formed for each pixel region on the first electrode; a second electrode formed on an entire surface of the display area on the organic light emitting layer; and an organic layer formed on an entire surface of the substrate including the second electrode.. .
Lg Display Co., Ltd.

new patent

Display device

A display device includes a display region arranged with a plurality of pixels in a matrix shape, a pixel electrode including at least a first conductive layer and a second conductive layer, an end part of the second conductive layer existing further to the exterior than an end part of the first conductive layer, a protective layer covering a region spreading further to the exterior than an end part of the first conductive layer of the second conductive layer so as to expose a part of a surface of the second conductive layer of a region stacked with the first conductive layer and the second conductive layer, and a bank layer covering an end part of the pixel electrode and an end part of the protective layer so as to expose a part of the second conductive layer.. .
Japan Display Inc.

new patent

Organic light-emitting diode display and manufacturing the same

An organic light-emitting diode (oled) display and a method of manufacturing the same are disclosed. In one aspect, the oled display includes an oled formed over a substrate, the oled including a first electrode, a second electrode formed over the first electrode and an intermediate layer interposed between the first and second electrodes.
Samsung Display Co., Ltd.

new patent

Organic el display panel and organic el display device

Pixels include red sub-pixels, green sub-pixels, first blue sub-pixels that emit dark blue light, and second blue sub-pixels that emit light blue light. Above a substrate, first blue pixel electrodes and first blue organic light-emitting layers are layered in regions of the first blue sub-pixels and second blue pixel electrodes and second blue organic light-emitting layers are layered in regions of the second blue sub-pixels.
Joled Inc.

new patent

Organic light-emitting display apparatus

An organic light-emitting display apparatus including: a pixel including a first region realizing an image and a second region through which external light is transmitted, a driving circuit unit disposed in the first region, a wire area including a third region and a fourth region, a wire for transferring a signal to the driving circuit unit, a first electrode disposed in the first region and electrically connected to the driving circuit unit, a pixel defining layer disposed in the first region and including a first opening and a second opening, a second electrode disposed in the first region opposite the first electrode, an organic emission layer disposed between the first electrode and the second electrode, and an insulating structure disposed between the substrate and the pixel defining layer and including at least one insulating layer that includes a third opening corresponding to the second region and the fourth region.. .
Samsung Display Co., Ltd.

new patent

Matrix detection device incorporating a metal mesh in a detection layer, and manufacturing method

A matrix-array detecting device including a stack comprising a matrix array of detecting-element pixels, and an active matrix array comprising a network of rows and columns for controlling the pixels and produced on the surface of a substrate, wherein the detecting-element pixels comprise: a common top electrode; a detecting layer; and discrete bottom electrodes; the device comprising a metallic mesh that is connected to the top electrode; that includes pads comprising at least one metal portion, the pads being incorporated into the detecting layer; and that is positioned in correspondence with the network of controlling rows and columns. A process for fabricating the matrix-array detecting device is also provided..
Commissariat A L'energie Atomique Et Aux Energies Alternatives

new patent

Memristors and fabricating memristors

There are disclosed memristors and memristor fabrication methods. A memristor may include a stack of four functional elements including, in sequence, a first electrode, a barrier layer, an oxygen-deficient switching layer, and a second electrode..
The Regents Of The University Of California

new patent

Electronic device

An electronic device includes a transistor. The transistor includes a body including a metal oxide; a gate electrode; and a gate insulating layer interposed between the body and the gate electrode, wherein the transistor is turned on or turned off by movement of oxygen vacancies in the body according to voltages applied to the gate electrode and the body..
Sk Hynix Inc.

new patent

Magnetic memory and manufacturing same

According to one embodiment, a magnetic memory includes a structure body including a first magnetic layer and a conductive layer, a second magnetic layer, a first electrode, a second electrode, a third magnetic layer, an intermediate layer, a third electrode, a fourth magnetic layer, and a circuit element. The first magnetic layer is disposed between the second magnetic layer and the conductive layer.
Kabushiki Kaisha Toshiba

new patent

Light-emitting unit

To provide a light-emitting unit having a semiconductor light-emitting device with a good responsiveness and a sufficient light emission quantity. The light-emitting unit comprises a plurality of semiconductor light-emitting devices, an n-wiring electrode and a p-wiring electrode respectively connecting the semiconductor light-emitting devices in parallel, an n-pad electrode connected to the n-wiring electrode, and a p-pad electrode connected to the p-wiring electrode.
Toyoda Gosei Co., Ltd.

new patent

Solid state imaging element and manufacturing method thereof, and electronic apparatus

A solid state imaging element according to the invention includes: a semiconductor layer of a first conductivity type; a gate insulation film on the semiconductor layer; a gate electrode on the gate insulation film; a first impurity region of a second conductivity type in the semiconductor layer and in a region outside the gate electrode on a first end portion side; a second impurity region of the second conductivity type in the semiconductor layer and in a region outside the gate electrode on a second end portion side that is opposite to the first end portion of the gate electrode; and a third impurity region of the first conductivity type over the second impurity region in the semiconductor layer at a position separate from the second end portion of the gate electrode as viewed in plan view, and is in contact with the second impurity region.. .
Seiko Epson Corporation

new patent

Power storage element, manufacturing method thereof, and power storage device

Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer.
Semiconductor Energy Laboratory Co., Ltd.

new patent

Semiconductor device and manufacturing the same

A semiconductor device includes a pixel electrode and a transistor which includes a first gate electrode, a first insulating layer over the first gate electrode, a semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, and a second gate electrode. The pixel electrode and the second gate electrode are provided over the second insulating layer.
Semiconductor Energy Laboratory Co., Ltd.

new patent

Display device and the manufacturing the same

Provided are a reliable high performance thin film transistor and a reliable high performance display device. The display device has: a gate electrode which is formed on a substrate; a gate insulating film which is formed to cover the substrate and the gate electrode; an oxide semiconductor layer which is formed on the gate electrode through the gate insulating film; a channel protective layer which is in contact with the oxide semiconductor layer and formed on the oxide semiconductor layer; and source/drain electrodes which are electrically connected to the oxide semiconductor layer and formed to cover the oxide semiconductor layer.
Japan Display Inc.

new patent

Semiconductor device, electro-optical device, manufacturing semiconductor device, manufacturing electro-optical device, and electronic apparatus

A first insulation layer includes a concave portion. A semiconductor layer includes a source area and a drain area, and a channel area disposed at the concave portion of the first insulation layer.
Seiko Epson Corporation

new patent

Thin film transistor array substrate and manufacturing method thereof

A substrate including gate wirings including gate line and a gate electrode disposed on the substrate, a storage line disposed on the same layer as the gate wirings, a gate insulating layer disposed on the gate wirings and the storage line, an oxide semiconductor layer pattern disposed on the gate insulating layer, data wirings including a data line crossing the gate line, a source electrode disposed on one side of the oxide semiconductor layer pattern, and a drain electrode disposed on another side of the oxide semiconductor layer, and an etch stopper including a first etch stopper portion disposed between the storage line and the data line and partially overlapping both the data line and the storage line.. .
Samsung Display Co., Ltd.

new patent

Pixel array, display panel and display device

The present invention provides a pixel array, a display panel and a display device, and the pixel array includes a plurality of gate lines and a plurality of data lines intersecting and insulated from each other, and a plurality of pixel units defined by the plurality of gate lines and the plurality of data lines intersecting each other. Each of the plurality of pixel units includes a thin-film transistor and a strip-shaped electrode, the strip-shaped electrodes of two adjacent pixel units in a same column have different inclination directions, the thin-film transistors of the two adjacent pixel units are in inclination angle regions of the two adjacent pixel units, respectively, and the inclination angle region is a region corresponding to a position at which extending directions of the strip-shaped electrode and the gate line intersect to form an acute angle in a pixel unit..
Beijing Boe Optoelectronics Technology Co., Ltd.

new patent

Semiconductor memory device and manufacturing same

According to one embodiment, a semiconductor memory device includes a substrate; an insulating layer provided on the substrate; a conductive layer provided on the insulating layer; a stacked body provided on the conductive layer and including a plurality of electrode layers and a plurality of insulating layers respectively provided among the plurality of electrode layers; a columnar section piercing through the stacked body to reach the conductive layer and extending in a first direction in which the stacked body is stacked; and a source layer. The columnar section includes a channel body and a charge storage film provided between the channel body and the respective electrode layers.
Kabushiki Kaisha Toshiba

new patent

Memory device and manufacturing the same

A memory device includes a plurality of gate electrode layers, an interlayer insulating layer, a plurality of contact plugs, and at least one contact insulating layer. The gate electrode layers extend in a first direction and have different lengths to form a step structure.

new patent

Semiconductor device

A semiconductor device includes gate electrodes vertically stacked on a substrate, and channel holes passing through the gate electrodes to extend perpendicularly to the substrate and including a gate dielectric layer and a channel area. The gate dielectric layer may be formed of a plurality of layers, and at least one layer among the plurality of layers may have different thicknesses in different locations..

new patent

Semiconductor device

According to one embodiment, a semiconductor device includes a substrate; a first structure; a second structure; a step; an insulating layer; a first pillar; a second pillar; a first contact portion; and a second contact. The first structure includes a first electrode layer and a first insulator.
Kabushiki Kaisha Toshiba

new patent

Non-volatile memory device and manufacturing same

A non-volatile memory device comprises a first electrode, a second electrode stacked on the first electrode, a semiconductor layer extending in a first direction through the first electrode and the second electrode, charge storage parts respectively provided between the first electrode and the semiconductor layer and between the second electrode and the semiconductor layer, and a barrier body arranged with the first electrode and the second electrode in a second direction orthogonal to the first direction and extending in the first direction. A distance between the second electrode and the barrier body is wider in the second direction than a distance between the first electrode and the barrier body..
Kabushiki Kaisha Toshiba

new patent

Semiconductor memory device and manufacturing the same

According to one embodiment, a semiconductor memory device includes a stacked body, a semiconductor pillar, a memory film and a conductive member. The stacked body includes a plurality of electrode layers arranged in a first direction.
Kabushiki Kaisha Toshiba

new patent

Semiconductor memory device

According to one embodiment, a semiconductor memory device includes a stacked body; a semiconductor body; a charge storage layer; a first conductor; a second conductor; and a third conductor. The stacked body includes a plurality of electrode layers stacked with an insulator interposed.
Kabushiki Kaisha Toshiba

new patent

Semiconductor memory device and manufacturing the same

According to one embodiment, a semiconductor memory device includes a stacked body, a semiconductor pillar, a memory film and a first contact portion. The stacked body includes a first electrode film, a second electrode film and an inter-electrode insulating film.
Kabushiki Kaisha Toshiba

new patent

Semiconductor memory device

According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and at least one columnar member. The stacked body is provided on the substrate.
Kabushiki Kaisha Toshiba

new patent

Semiconductor device and manufacturing the same

According to one embodiment, a semiconductor device includes a substrate, a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer, a first gate electrode layer, a second gate electrode layer, a gate insulating film, a first interlayer insulating film, a second interlayer insulating film. The first electrode layer is separated from the substrate in a first direction.
Kabushiki Kaisha Toshiba

new patent

Semiconductor integrated circuit device and a manufacturing the same

A semiconductor device including a memory cell featuring a first gate insulating film over a semiconductor substrate, a control gate electrode over the first gate insulating film, a second gate insulating film over the substrate and a side wall of the control gate electrode, a memory gate electrode over the second gate insulating film arranged adjacent with the control gate electrode through the second gate insulating film, first and second semiconductor regions in the substrate positioned on a control gate electrode side and a memory gate side, respectively, the second gate insulating film featuring a first film over the substrate, a charge storage film over the first film and a third film over the second film, the first film having a first portion between the substrate and memory gate electrode and a thickness greater than that of a second portion between the control gate electrode and the memory gate electrode.. .
Renesas Electronics Corporation

new patent

Nonvolatile semiconductor memory device

A nonvolatile semiconductor memory device according to an embodiment comprises a memory cell, the memory cell comprising: a semiconductor layer; a control gate electrode; a charge accumulation layer disposed between the semiconductor layer and the control gate electrode; a first insulating layer disposed between the semiconductor layer and the charge accumulation layer; and a second insulating layer disposed between the charge accumulation layer and the control gate electrode, the charge accumulation layer including an insulator that includes silicon and nitrogen, and the insulator further including: a first element or a second element, the second element being different from the first element; and a third element different from the first element and the second element.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device and manufacturing the same

According to one embodiment, the first separation film separates the control electrode, the first insulating layer, the charge storage layer, the intermediate insulating layer, the floating electrode layer, and the second insulating layer in a first direction. The second separation film separates a first stacked unit in a second direction.
Kabushiki Kaisha Toshiba

new patent

Nonvolatile semiconductor memory device and manufacturing the same

A semiconductor memory device according to an embodiment includes a plurality of channel layers, a gate-insulating film disposed on the channel layer, a floating gate electrode disposed on the gate-insulating film, a block insulating film disposed over the floating gate electrode, the block insulating film including at least a first insulating film and a second insulating film, the second insulating film including lanthanum and aluminum, and a control gate electrode disposed on the block insulating film. The second insulating film includes an upwardly convex curved portion in a region between the channel layers..
Kabushiki Kaisha Toshiba

new patent

Semiconductor memory device and manufacturing the same

According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode members and a plurality of insulating members, each of the electrode members and each of the insulating members being stacked alternately in a first direction on the substrate. The semiconductor memory device also includes a memory hole that extends in the stacked body in the first direction and a semiconductor member that is disposed to extend in the memory hole in the first direction.
Kabushiki Kaisha Toshiba

new patent

Semiconductor arrangement with capacitor

A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device.
Taiwan Semiconductor Manufacturing Company Limited

new patent

Semiconductor device and manufacturing the same

A method of manufacturing a semiconductor device includes: preparing a wafer in which a first cell area and a second cell area are defined; forming a bottom electrode structure in the first cell area and a dummy structure located in the second cell area; and sequentially forming a dielectric layer and a top electrode on the bottom electrode structure and the dummy structure, wherein the bottom electrode structure includes a plurality of bottom electrodes extending in a first direction in the first cell area and first and second supporters to support the plurality of bottom electrodes, wherein the dummy structure includes a first mold film, a first supporter film, a second mold film, and a second supporter film that are sequentially formed to cover the second cell area, and the second supporter and the second supporter film are at a same level relative to the wafer.. .
Samsung Electronics Co., Ltd.

new patent

Semiconductor device having supporters and manufacturing the same

A semiconductor device includes storage electrodes on a substrate and one or more supporters configured to couple one or more portions of the storage electrodes. The semiconductor device may include multiple non-intersecting supporters extending in parallel to a surface of the substrate.
Samsung Electronics Co., Ltd.

new patent

Semiconductor device and driving method thereof

A semiconductor device including a nonvolatile memory cell in which a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor are included is provided. Data is written to the memory cell by turning on the writing transistor and applying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor, so that the predetermined amount of charge is held in the node.
Semiconductor Energy Laboratory Co., Ltd.

new patent

Semiconductor device having first and second gate electrodes and manufacturing the same

Provided is a semiconductor device having first and second gate electrodes. The semiconductor device includes a substrate, an active region extending in a first direction on the substrate, a first gate electrode crossing the active region and extending in a second direction, and a second gate electrode extending in the second direction on the first gate electrode, wherein the first gate electrode has a first width in the first direction, and wherein the second gate electrode has a second width in the first direction, the second width being less than the first width..

new patent

Semiconductor integrated circuit

A semiconductor integrated circuit includes a substrate, a multi-gate transistor device positioned on the substrate, and an ldmos device positioned on the substrate. The substrate includes a plurality of first isolation structures and a plurality of second isolation structures.
United Microelectronics Corp.

new patent

Semiconductor device

According to one embodiment, in a semiconductor device, the first semiconductor region is provided between the first and the second electrode. The second semiconductor region is provided between the first semiconductor region and the second electrode.
Kabushiki Kaisha Toshiba

new patent

Silicon carbide semiconductor device

A silicon carbide semiconductor device includes a transistor region, a diode region, a gate line region, and a gate pad region. The gate pad region and the gate line region are each disposed to be sandwiched between the diode region and the diode region, and a gate electrode on the gate pad region and the gate line region is formed on an insulating film formed on an epitaxial layer.
Panasonic Intellectual Property Management Co., Ltd.

new patent

Passive-on-glass (pog) device and method

A device includes a glass substrate and a capacitor. The capacitor includes a first metal coupled to a first electrode, a dielectric structure, and a via structure comprising a second electrode of the capacitor.
Qualcomm Incorporated

new patent

Making electrical components in handle wafers of integrated circuit packages

A method for making an integrated circuit package includes providing a handle wafer having a first region defining a cavity. A capacitor is formed in the first region.
Invensas Corporation

new patent

Semiconductor device

A semiconductor device includes an insulating substrate having an insulating plate and a circuit plate; a semiconductor chip having a front surface provided with a gate electrode and a source electrode, and a rear surface fixed to the circuit plate; a printed circuit board facing the insulating substrate, and including a first metal layer and a second metal layer; a first conductive post having two ends electrically and mechanically connected to the gate electrode and the first metal layer; a second conductive post having two ends electrically and mechanically connected to the source electrode and the second metal layer; and a circuit impedance reducing element electrically connected between the gate electrode and the source electrode through the first conductive post and the second conductive post.. .
Fuji Electric Co., Ltd.

new patent

Semiconductor device, inverter circuit, and drive device

A semiconductor device of an embodiment includes a first electrode, a second electrode facing the first electrode, an alternating-current electrode, a first switching element provided between the first electrode and the alternating-current electrode, and a second switching element provided between the second electrode and the alternating-current electrode. The first switching element and the second switching element are electrically connected in series between the first electrode and the second electrode, and the alternating-current electrode is electrically connected between the first switching element and the second switching element..
Kabushiki Kaisha Toshiba

new patent

Semiconductor apparatus, stacked semiconductor apparatus, encapsulated stacked-semiconductor apparatus, and manufacturing the same

A semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second insulating layer, wherein the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from its upper surface and is electrically connected to the through electrode at an lower surface of the second insulating layer. This semiconductor apparatus can be easily placed on a circuit board and stacked, and can reduce its warpage even with dense metal interconnects..
Shin-etsu Chemical Co., Ltd.

new patent

Semiconductor device and manufacturing the same

A semiconductor device includes a first gate electrode provided in a jumper region of a substrate and extending in a first direction, first source/drain regions provided at both sides of the first gate electrode, and a connecting contact electrically connecting the first gate electrode and the first source/drain regions to each other. The connecting contact includes first sub-contacts disposed at both sides of the first gate electrode and connected to the first source/drain regions, and a second sub-contact extending in a second direction intersecting the first direction.
Samsung Electronics Co., Ltd.

new patent

Semiconductor device

A semiconductor device includes: a semiconductor substrate, a first portion and a second portion of an upper layer portion of the semiconductor substrate being conductive; an insulating member electrically isolating the first portion from the second portion; a first stacked body provided in a region directly above the second portion, the first stacked body including first insulating films and electrode films stacked alternately; a semiconductor pillar provided inside the first stacked body and extending in a stacking direction; a charge storage film provided between the semiconductor pillar and the electrode films; a second stacked body provided in a region directly above the first portion, the second stacked body including second insulating films and third insulating films stacked alternately; and two first conductive pillars provided inside the second stacked body extending in the stacking direction, lower ends thereof being connected to the first portion.. .
Kabushiki Kaisha Toshiba

new patent

Semiconductor device, embedded capacitor unit, semiconductor package, and manufacturing embedded capacitor unit

Jitter that becomes a problem in a semiconductor part which performs high-speed signal processing is reduced. A semiconductor device includes a heat-resistant metal plate, a capacitor part having a lower electrode, a sintered dielectric part, and an upper electrode that are formed on one or more surfaces of the heat-resistant metal plate, a semiconductor chip fixed on the capacitor part, a wire for electrically connecting a lead frame to the semiconductor chip and the upper electrode, and a mold part in which at least the capacitor part and the semiconductor chip are buried.
Panasonic Intellectual Property Management Co., Ltd.

new patent

Semiconductor device

Disclosed is a semiconductor device in which a resistance component resulting from wiring is reduced. A plurality of transistor units are arranged side by side in a first direction, each of which has a plurality of transistors.
Renesas Electronics Corporation

new patent

Semiconductor device

For a purpose of raising the breakdown voltage of a semiconductor device, the creepage distance and clearance between an electrode terminal and another metallic portion are preferably increased. A semiconductor device is provided, the semiconductor device including: a semiconductor element; a case portion that houses the semiconductor element; and an external terminal provided to a front surface of the case portion, wherein the front surface of the case portion has, formed thereon: a wall portion that protrudes from the front surface; and a hollow portion that is provided to a region surrounded by the wall portion and is depressed relative to the front surface, and the external terminal is arranged on a floor surface of the hollow portion..
Fuji Electric Co., Ltd.

new patent

Semiconductor device

Provided is a semiconductor device including a semiconductor substrate; a dummy trench that is formed on a front surface side of the semiconductor substrate; an emitter electrode that is formed above a front surface of the semiconductor substrate and includes a recessed portion that is a recess in an outer periphery thereof, as seen in a planar view; a dummy pad that is electrically connected to the dummy trench and has at least a portion thereof formed within the recessed portion, as seen in the planar view; and a dummy wire that electrically connects the emitter electrode and the dummy pad.. .
Fuji Electric Co., Ltd.



Electrode topics:
  • Phosphoric Acid
  • Internal Combustion Engine
  • Carbon Atoms
  • Porous Carbon
  • Double Layer Capacitor
  • Graphene Oxide
  • Aqueous Solution
  • Lithium Ion
  • Exhaust Gas
  • Soot Sensor
  • Combustion
  • Calibration
  • Electronic Apparatus
  • Electrical Signal
  • Electric Conversion


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