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Electrode patents

      

This page is updated frequently with new Electrode-related patent applications.




Date/App# patent app List of recent Electrode-related patents
08/18/16
20160242286 
 Wiring board and  manufacturing same patent thumbnailWiring board and manufacturing same
A wiring board is provided with: an insulating layer; a base electrode layer layered on one primary surface of the insulating layer in predetermined regions; an insulating covering layer layered on one primary surface of the insulating layer in a state covering parts of edges of the base electrode layer; and a surface electrode layer plated on exposed portions of the base electrode layer not covered by the insulating covering layer, the thickness of covered portions of the base electrode layer covered by the insulating covering layer being less than the thickness of the exposed portions. The surface electrode layer is formed only on the exposed portions of the base electrode layer..
Murata Manufacturing Co., Ltd.


08/18/16
20160242269 
 Device for treating a surface with a plasma patent thumbnailDevice for treating a surface with a plasma
A device for treating a surface with a dielectric barrier plasma, wherein the surface functions as a return electrode, having a housing (1), in which a high-voltage feed line, an electrode (8) which is connected to the high-voltage feed line, and a dielectric (9), which screens the electrode (8) with respect to the surface, are located, permits the plasma treatment of highly curved surfaces and of relatively large surface areas by virtue of the fact that the electrode (8) has the shape of a circle which is mounted in the housing (1) so as to be rotatable at least to a limited degree, and projects with a spherical section from an end-side opening (5) in the housing (1), and in that the electrode (8) is coated with the dielectric (9) in such a way that its spherical section projecting out of the housing (1) is covered by the dielectric (9) in every possible rotational position.. .
Cinogy Gmbh


08/18/16
20160241942 
 Bluetooth communication bracelet patent thumbnailBluetooth communication bracelet
A bluetooth communication bracelet includes a main body and a bluetooth earphone. The main body includes a wearing member, a charging plate, an usb interface, and an audio jack.
1more Inc.


08/18/16
20160241217 
 Counter electrode device,  varying the permittivity of a liquid crystal device patent thumbnailCounter electrode device, varying the permittivity of a liquid crystal device
Techniques and mechanisms for changing a permittivity of a liquid crystal (lc) cell that is to facilitate a radiating or guiding of a radio frequency electromagnetic wave. In an embodiment, a device includes electrodes coupled to variously apply different electrical fields to the lc cell at different times.

08/18/16
20160241155 
 Power conversion apparatus patent thumbnailPower conversion apparatus
A power conversion apparatus includes a capacitor and a heat dissipation member for cooling the capacitor. The capacitor and the heat dissipation member are pressed in an arranging direction in which the capacitor and the heat dissipation member are arranged.
Denso Corporation


08/18/16
20160240999 
 Densely-spaced laser diode configurations patent thumbnailDensely-spaced laser diode configurations
A densely-spaced single-emitter laser diode configuration is created, by using a laser bar (or similar array configuration) attached to a submount component of a size sufficient to adequately support the enter laser structure. The surface of the submount component upon which the laser structure is attached is metallized and used to form the individual electrical contacts to the laser diodes within the integrated laser structure.
Ii-vi Incorporated


08/18/16
20160240992 
 Gas laser oscillation apparatus of orthogonal excitation type patent thumbnailGas laser oscillation apparatus of orthogonal excitation type
A gas laser oscillation apparatus of orthogonal excitation type includes an electric discharge region having a pair of electric discharge electrodes, an axial flow blower having a plurality of rotor vanes and working by a permanent magnet motor, a first heat exchanger having a plurality of cooling fins, the cooling fins arranged on a plane perpendicular to an optical axis, a second heat exchanger having a plurality of cooling fins, the cooling fins arranged on a plane perpendicular to the optical axis, a gas duct having a gas passageway and arranged between the electric discharge region and the first heat exchanger, the axial flow blower being arranged on the gas passageway. The axial flow blower is arranged on a windward side of the first heat exchanger.
Mitsubishi Electric Corporation


08/18/16
20160240913 
 Antenna device and electronic timepiece patent thumbnailAntenna device and electronic timepiece
An antenna device housed in a metallic case body of an electronic timepiece includes: a first substrate which is provided on the side of a back over of the metallic case body and on which a ground pattern and an wireless communication unit as a power feeding circuit are formed; a second substrate which is arranged on the opposite side of the movement and on which a chip antenna is formed; and a conductive electrode which is arranged inside the movement and has one end connected to the wireless communication unit and the other end connected to the chip antenna.. .
Seiko Epson Corporation


08/18/16
20160240906 
 Non-reciprocal circuit element patent thumbnailNon-reciprocal circuit element
In a non-reciprocal circuit element, the characteristics variation with respect to temperature is suppressed with a simple configuration without changing a magnetic material or the material of a magnet. A non-reciprocal circuit element includes: a magnetic material (32) to which a dc magnetic field (g) is applied; a plurality of center electrodes (35, 36) disposed on the magnetic material (32) so as to intersect each other in an insulated state; a terminal resistor (r) connected between input and output ports (p1, p2) and in in parallel with one of the center electrodes (35, 36); a variable capacitance element (c11) connected between the input and output ports (p1, p2) and in parallel with the terminal resistor (r); and a thermistor element (s) connected to a control power supply circuit (e) of the variable capacitance element (c11) and in series with the variable capacitance element (c11)..
Murata Manufacturing Co., Ltd.


08/18/16
20160240897 
 Battery cell structure with limited cell penetrations patent thumbnailBattery cell structure with limited cell penetrations
Light is transmitted from a light source through or from a separator of a battery cell and received by one or more light detectors. The light that is normally transmitted through the separator is scattered, absorbed, wavelength-shifted or otherwise distorted by an impending fault in the vicinity of or within the separator.
Battelle Memorial Institute


08/18/16
20160240895 

Switching device for an electrochemical energy store and energy storage system


The embodiments relate to a switch device for an electrochemical energy store having: a film transistor device that comprises at least one organic transistor, can be mounted in a planar manner on at least one electrode of the electrochemical energy store, can be controlled by an external voltage source, and is designed in the form of a controllable electrical resistor that is connected, in series, to an internal resistor of said electrochemical energy store.. .
Airbus Operations Gmbh


08/18/16
20160240892 

Battery pack having pcm case


Disclosed herein is a battery pack configured to have a structure in which a protection circuit module (pcm) is mounted at a sealed surplus part of a battery cell at which electrode terminals of the battery cell are located, wherein the pcm includes a protection circuit board (pcb), a safety element, and an electrically insulative module case for surrounding the pcb and the safety element, the module case includes an upper case and a lower case coupled to each other through an assembly type fastening structure for receiving the pcb and the safety element, the module case, the pcb, and the electrode terminals are provided with first openings and second openings having a sufficient size to allow a first joint fastening member and a second joint fastening member to extend therethrough, and the pcb is received between the upper case and the lower case such that the pcb is electrically connected to the electrode terminals of the battery cell in a state in which the pcb is coupled to the electrode terminals of the battery cell by the first joint fastening member and the second joint fastening member.. .
Lg Chem, Ltd.


08/18/16
20160240889 

Electrolyte formulations for electrochemical cells containing a silicon electrode


Additives to electrolytes that enable the formation of comparatively more robust sei films on silicon anodes. The sei films in these embodiments are seen to be more robust in part because the batteries containing these materials have higher coulombic efficiency and longer cycle life than comparable batteries without such additives..
Wildcat Discovery Technologies, Inc.


08/18/16
20160240884 

Amorphous cathode material for battery device


A method of fabricating a multilayered thin film solid state battery device. The method steps include, but are not limited to, the forming of the following layers: substrate member, a barrier material, a first electrode material, a thickness of cathode material, an electrolyte, an anode material, and a second electrode material.
Sakti3, Inc.


08/18/16
20160240883 

Secondary battery


A secondary battery includes an electrode assembly comprising a first electrode plate, a separator, and a second electrode plate stacked together and folded about a folding part; an outer case surrounding the electrode assembly; and an electrode lead electrically connected to the electrode assembly and extending to the outside of the outer case.. .
Samsung Sdi Co., Ltd.


08/18/16
20160240880 

Flow battery start-up and recovery management


A start-up plating process for a flow cell battery is disclosed. Upon start-up of the flow-cell stack, catalysts may have deplated from the electrodes.
Imergy Power Systems, Inc.


08/18/16
20160240875 

Anode bleed control in a fuel cell stack


An electrochemical fuel cell assembly comprises a fuel cell stack having a fuel delivery inlet and a fuel delivery outlet. The fuel cell stack further includes a number of fuel cells each having a membrane-electrode assembly and a fluid flow path coupled between the fuel delivery inlet and the fuel delivery outlet for delivery of fuel to the membrane-electrode assembly.
Intelligent Energy Limited


08/18/16
20160240874 

Fuel cell generator and operating fuel cell generator


A fuel cell generator 1 of the present invention includes a fuel cell module 10 formed by disposing multiple power generation elements, in which fuel electrode, a solid electrolyte, and an air electrode are sequentially stacked together, at predetermined intervals, the multiple power generation elements being connected to each other through an interconnector, a fuel supply unit 12 that supplies fuel gas to the fuel electrode; an air supply unit 11 that supplies oxidizing gas to the air electrode; and a repairing particle supply unit 14 that supplies repairing particles 14a to the damaged portion in at least one of the interconnector and the solid electrolyte.. .

08/18/16
20160240862 

Fuel-cell electrode catalyst, and production method therefor


An object of the present invention is to provide a fuel-cell electrode catalyst in which a catalyst metal is uniformly supported on a support. This object can be achieved by a fuel-cell electrode catalyst comprising a support having pores and a catalyst metal uniformly supported on the support, wherein at least 80% of the support has a primary particle size within ±75% of the mean primary particle size of the support..
Cataler Corporation


08/18/16
20160240859 

Manufacturing electrode


A manufacturing method of an electrode according to the present invention includes: manufacturing an electrode mixture including granules containing an electrode active material, a binder, a water-soluble polymer having an acidic functional group, and a dispersion medium containing water; and forming the electrode mixture on a current collector through rolling. The manufacturing of the electrode mixture includes forming granules containing the electrode active material, the binder, and the dispersion medium, and adding the water-soluble polymer having the acidic functional group to the granules..
Toyota Jidosha Kabushiki Kaisha


08/18/16
20160240858 

Nonaqueous electrolyte secondary battery


An object is to provide a nonaqueous electrolyte secondary battery that has an sei coating with a special structure and has excellent battery characteristics. As an electrolytic solution of the nonaqueous electrolyte secondary battery, an electrolytic solution containing: a salt whose cation is an alkali metal, an alkaline earth metal, or aluminum and whose cation is an alkali metal, an alkaline earth metal, or aluminum; and an organic solvent having a heteroelement is used, wherein, is>io is satisfied, and an s,o-containing coating having an s═o structure is formed on the surface of a positive electrode and/or a negative electrode.
The University Of Tokyo


08/18/16
20160240857 

Lead-acid battery


A lead-acid battery includes a negative electrode material containing graphite or carbon fiber. The ratio of the mass of the negative electrode material to the mass of a positive electrode material is 0.62 or more..
Gs Yuasa International Ltd.


08/18/16
20160240855 

Alkaline battery and manufacturing alkaline battery


A method for manufacturing an alkaline battery includes assembling an alkaline battery with a positive electrode, a negative electrode, a separator, and an electrolyte. The positive electrode includes cobalt and a positive electrode active material particle, which has a main component that is nickel hydroxide.
Primearth Ev Energy Co., Ltd.


08/18/16
20160240852 

Lead-acid battery


A lead-acid battery includes a negative electrode material containing graphite and barium sulfate. A ratio s/w of an average plate interval s between a negative electrode plate and a positive electrode plate, to a mass w of the negative electrode material per one negative electrode plate is 0.01 mm/g or more..
Gs Yuasa International Ltd.


08/18/16
20160240849 

Nonaqueous electrolyte battery and battery pack


The nonaqueous electrolyte battery according to one embodiment includes a positive electrode and a negative electrode. The positive electrode contains a positive electrode active material containing manganese-containing composite oxide.
Kabushiki Kaisha Toshiba


08/18/16
20160240848 

Positive electrode material and lithium ion battery


A positive electrode material includes an active material represented by li2mn(1-2x)nixmoxo3 (where 0<x<0.4).. .
Panasonic Intellectual Property Management Co., Ltd.


08/18/16
20160240847 


A method of manufacturing a negative electrode for a nonaqueous electrolyte secondary battery, the method includes mixing negative electrode active material particles and ferroelectric particles with each other to form first composite particles in which the ferroelectric particles are attached to the negative electrode active material particles; mixing the first composite particles and a binder with each other to form granulated particles; applying pressure to an aggregate of the granulated particles to form a sheet-shaped negative electrode mixture layer; and arranging the negative electrode mixture layer on a main surface of a negative electrode current collector foil.. .
Toyota Jidosha Kabushiki Kaisha


08/18/16
20160240846 

Positive active material for lithium secondary battery, producing the same, electrode for lithium secondary battery, lithium secondary battery and energy storage apparatus


A positive active material for a lithium secondary battery containing a lithium transition metal composite oxide having a hexagonal crystal structure in which the transition metal (me) includes ni, co and mn, wherein in the lithium transition metal composite oxide, a molar ratio of ni to the transition metal (me) (ni/me) is 0.5 or more and 0.9 or less, a molar ratio of co to the transition metal (me) (co/me) is 0.1 or more and 0.3 or less, a molar ratio of mn to the transition metal (me) (mn/me) is 0.03 or more and 0.3 or less, and a value obtained by dividing a half width ratio f(003)/f(104) at a potential of 4.3 v (vs. Li/li+) by a half width ratio f(003)/f(104) at a potential of 2.0 v (vs.
Gs Yuasa International Ltd.


08/18/16
20160240844 

Lead-acid battery, negative electrode plate thereof and producing lead-acid battery


A lead-acid battery includes a negative electrode plate; a positive electrode plate; and an electrolyte solution, the negative electrode plate including a negative electrode material containing an inorganic sulfate and an anti-shrink agent, the inorganic sulfate having a 111 crystal plane or an average secondary particle size of 3.8 μm or more, the anti-shrink agent being adsorbed to the inorganic sulfate.. .
Gs Yuasa International Ltd.


08/18/16
20160240843 

Negative electrode active material for non-aqueous electrolyte secondary battery, non-aqueous electrolyte secondary battery, and producing negative electrode material for a non-aqueous electrolyte secondary battery


The present invention provides a negative electrode active material for a non-aqueous electrolyte secondary battery, including negative electrode active material particles containing a silicon compound expressed by sio where 0.55≦x≦1.6, the negative electrode active material particles at least partially coated with a carbon coating, the carbon coating exhibiting a peak at 2θ=25.5° having a half width of 1.5° to 4.5° in an x-ray diffraction spectrum measured after separating the carbon coating from the negative electrode active material particles, the carbon coating exhibiting scattering peaks at 1330 cm−1 and 1580 cm−1 in raman spectrum obtained by raman spectrometry measured after separating the carbon coating from the negative electrode active material particles, wherein a ratio of an intensity of the scattering peak at 1330 cm−1 to that at 1580 cm−1 satisfies 0.7<i1330/i1580<2.0. This negative electrode active material can increase the battery capacity and improve the cycle performance and battery initial efficiency..
Shin-etsu Chemical Co., Ltd.


08/18/16
20160240839 

Manufacturing non-aqueous electrolyte secondary battery


A manufacturing method for a non-aqueous electrolyte secondary battery includes: forming a powder; forming a sheet-like green compact; and forming a heat-resistant layer. The powder contains composite particles and a solvent.
Toyota Jidosha Kabushiki Kaisha


08/18/16
20160240838 

Solution for forming layer that contains solid electrolyte for all-solid-state alkali metal secondary batteries, coated active material particles, electrode, all-solid-state alkali metal secondary battery and manufacturing same


A forming solution for forming a layer containing a solid electrolyte for an all-solid-state alkali metal secondary battery comprising a component derived from a2s and mxsy (a is selected from li and na; m is selected from p, si, ge, b, al and ga; and x and y are a number that gives a stoichiometric ratio in accordance with a species of m) as a starting material for manufacturing the solid electrolyte, a nonpolar organic solvent and a polar organic solvent having a polarity value higher than that of the nonpolar organic solvent by 0.3 or more.. .
Japan Science And Technology Agency


08/18/16
20160240837 

Stepwise-stacked seawater battery assembly


A stepwise-stacked seawater battery assembly comprises a first battery chamber, a second battery chamber, a seawater electrolytic liquid, and an electric-conduction set. The first battery chamber includes a first accommodation room and a first electrode group.
Taiwan Carbon Nano Technology Corporation


08/18/16
20160240833 

Positive locking confirmation mechanism for battery contact of electric vehicle and positive locking confirmation device for electrode of battery pack


A positive locking confirmation mechanism is provided for confirming a locking state of a terminal bolt of a battery pack of an electric vehicle. A vehicular controlling unit monitors whether a voltage signal detected by a voltage sensor of a battery management unit is stable.
Aleees Eco Ark Co. Ltd.


08/18/16
20160240831 

Dendrite-resistant battery


An apparatus includes a first electrode, a second electrode, and a porous layer positioned between the first electrode and the second electrode. The porous layer resists dendrite growth from the first electrode through the porous layer to the second electrode.
Apple Inc.


08/18/16
20160240829 

System and fabricating an electrode with separator


A system and method for providing a ceramic-based separator onto an electrode is disclosed. A separator is formed on the electrode via a dry, solvent-free application of a ceramic-based separator to the electrode.
Eskra Technical Products, Inc.


08/18/16
20160240828 

Electrode group and electricity storage device using the same


An electrode group includes a plurality of first electrodes including sheet-shaped first current collectors and a first active material carried on the first current collectors, a plurality of second electrodes including sheet-shaped second current collectors and a second active material carried on the second current collectors, and sheet-shaped separators disposed between the first electrodes and the second electrodes. The first electrodes and the second electrodes are alternately stacked with the separators disposed between the first electrodes and the second electrodes, and the first current collectors each include a first metal porous body..
Sumitomo Electric Industries, Ltd.


08/18/16
20160240826 

Battery holder


The purpose of the present invention is to realize a battery holder, which can suppress occurrence of an instantaneous interruption in outputting direct-current power to the outside due to continuous strong external vibrations or impacts and have good attachability and detachability of battery. The battery holder includes electrode contact portions 13 (14) configured to be electrically connected to a battery bat to be housed therein, wherein the electrode contact portions include a metal plate 132 (142) attached to a base 131 (141) having elasticity..
Yokogawa Electric Corporation


08/18/16
20160240825 

Battery pack


A battery pack includes a battery cell including an electrode assembly including a first electrode plate, a second electrode plate, and a separator that are wrapped, a case that receives the electrode assembly, a cap assembly including a cap up located on an upper part of the case and coupled to the case to be electrically connected to the electrode assembly, a first connection member electrically connected to the cap up of the battery cell, a joining portion on one area of an outer surface of the case, and a second connection member electrically connected to the joining portion at the one area of the outer surface of the case.. .
Samsung Sdi Co., Ltd.


08/18/16
20160240824 

Flexible secondary battery


A flexible secondary battery includes an electrode assembly having a first electrode plate, a second electrode plate, and a separator between the first and second electrode plates; and a pouch comprising a plurality of outwardly extending protrusions, the pouch sealing the electrode assembly and an electrolyte therein, wherein the pouch is configured such that a degree of strain of the electrode assembly resulting from bending of the pouch is lower than a degree of strain on the pouch from formation of the protrusions.. .
Samsung Sdi Co., Ltd.


08/18/16
20160240822 

Method for manufacturing light-emitting device


A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover.
Semiconductor Energy Laboratory Co., Ltd.


08/18/16
20160240821 

Frequency dependent light emitting devices


An electroluminescent device described herein, in one aspect, comprises a first electrode and second electrode and a light emitting layer positioned between the first and second electrodes. A current injection gate is positioned between the first electrode and the light emitting layer or the second electrode and the light emitting layer.
Wake Forest University


08/18/16
20160240819 

Organic light-emitting display apparatus and manufacturing the same


An organic light-emitting display apparatus includes a substrate, an optical layer formed over the substrate and a light emitting pixel formed over the optical layer. The optical layer includes a first refractive index layer portion having a first refractive index, a second refractive index layer portion having a second refractive index greater than the first refractive index.
Samsung Display Co., Ltd.


08/18/16
20160240811 

Display device and manufacturing the same


A display device including a first substrate and a pixel defining layer disposed on the first substrate. The pixel defining layer is configured to define an emissive area and a transmissive area.
Samsung Display Co., Ltd.


08/18/16
20160240810 

Organic light emitting display device and manufacturing an organic light emitting display device


An organic light emitting display device may include a substrate, an anode, an auxiliary electrode, a light emitting structure, a lower cathode, and an upper cathode. The substrate may include a pixel region, a transparent region, and a boundary region between the pixel region and the transparent region.
Samsung Display Co., Ltd.


08/18/16
20160240806 

Devices for emitting and/or receiving electromagnetic radiation, and providing same


The invention describes a device for emitting or detecting electromagnetic radiation. The device has a first and a second electrode which are connected to each other via an electrically conductive nanostructure.
Technische Universitaet Chemnitz


08/18/16
20160240805 

Perovskite and other solar cell materials


Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive.
Hunt Energy Enterprises, L.l.c.


08/18/16
20160240803 

Printable nanoparticle conductor ink with improved charge injection


A transistor has a substrate, source and drain electrodes on the substrate, the source and drain electrodes formed of a conductor ink having silver nanoparticles with integrated dipolar surfactants, an organic semiconductor forming a channel between the source and drain electrodes, the organic semiconductor in contact with the source and drain electrodes, a gate dielectric layer having a first surface in contact with the organic semiconductor, and a gate electrode in contact with a second surface of the gate dielectric layer, the gate electrode formed of silver nanoparticles with integrated dipolar surfactants.. .
Palo Alto Research Center Incorporated


08/18/16
20160240801 

Display device


A display device, including a substrate having a first region and second regions; transistors on the substrate in the first region and the second regions; first electrodes each connected to the transistors; an organic emission layer on the first electrodes; and second electrodes on the organic emission layer, molecular weights of organic materials of the organic emission layer in the first region and the organic emission layer in the second regions being different from each other.. .
Samsung Display Co., Ltd.


08/18/16
20160240797 

Solar cell and manufacturing the same


Disclosed is a solar cell including a first electrode, a second electrode, and a first conversion layer disposed therebetween. The first electrode is closer to a light incident side than the second electrode.
Industrial Technology Research Institute


08/18/16
20160240796 

Perovskite and other solar cell materials


Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive.
Hunt Energy Enterprises, L.l.c.


08/18/16
20160240780 

Magnetoresistive tunnel junction


A magnetoresistive tunnel junction (mtj) includes a magnetic reference layer disposed between a first electrode and a resistive layer. The junction also includes a magnetic free layer disposed between the resistive layer and a second electrode.
Taiwan Semiconductor Manufacturing Company, Ltd.


08/18/16
20160240779 

Multilayer-stacked resistive random access memory device


A multilayer-stacked resistive random access memory device includes: first and second electrode layers; a resistive oxide layer which is electrically coupled to the first and second electrode layers, which exhibits resistive switching characteristics and which includes a metal oxide containing a first metal selected from the group consisting of w, ti, zr, sn, ta, ni, ag, cu, co, hf, ru, mo, cr, fe, al, and combinations thereof; and a sulfide layer contacting the resistive oxide layer and including a metal sulfide that contains a second metal that is the same as the first metal.. .
National Tsing Hua University


08/18/16
20160240778 

Multi-value nonvolatile organic resistive random access memory and preparing the same


Disclosed are a multi-value nonvolatile organic resistive random access memory and a method for preparing the same. The resistive random access memory comprises a top electrode, a bottom electrode and a middle functional layer located between the top electrode and the bottom electrode, the middle functional layer is at least two layers of parylene.
Peking University


08/18/16
20160240777 

Resistive random access memory having stable forming voltage


A resistive random access memory including a first electrode, a separating medium, a resistance changing layer and a second electrode is disclosed. The first electrode has a mounting face.
National Sun Yat-sen University


08/18/16
20160240776 

Memory device and fabricating the same


A memory device comprises a substrate, a first electrode layer, a spacer, a memory layer and a second electrode layer. The substrate has a recess.
Macronix International Co., Ltd.


08/18/16
20160240774 

Semiconductor device and producing the same


A memory device includes memory elements arranged in two or more rows and two or more columns. Each memory element includes a pillar-shaped insulator layer, a phase change film around an upper portion of the pillar-shaped insulator layer, a lower electrode formed around a lower portion of the pillar-shaped insulator layer and connected to the phase change film, a reset gate insulating film surrounding the phase change film, and a reset gate surrounding the reset gate insulating film.
Unisantis Electronics Singapore Pte. Ltd.


08/18/16
20160240768 

Piezoelectric element and manufacturing piezoelectric element


Provided are a piezoelectric element having high stability, which operates with high efficiency, and a method for manufacturing the piezoelectric element. The piezoelectric element (10) has a laminate structure in which a first electrode (14), a first piezoelectric film (16), a second electrode (18), an adhesion layer (20), an interlayer (22), a third electrode (24), a second piezoelectric film (26), and a fourth electrode (28) are laminated in this order on a silicon substrate (12).
Fujifilm Corporation


08/18/16
20160240766 

Piezoelectric thin-film based flexible sensing device, fabrication thereof and operating the same


A sensing device, a method for fabrication thereof, and a method for operating the same are disclosed. The sensing device includes a flexible substrate, a first metallisation layer, a piezoelectric thin film layer, a second metallisation layer, and an insulating layer.
Masdar Institute Of Science And Technology


08/18/16
20160240760 

Flip-chip light emitting diode and manufacturing the same


This invention relates to a flip-chip light-emitting diode and a method for manufacturing the same. The flip-chip light-emitting diode comprises a packaging body and a conductor layer.

08/18/16
20160240758 

Light emitting diode


Provided is a light emitting diode (led) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate.
Genesis Photonics Inc.


08/18/16
20160240757 

Light-emitting element


A light-emitting element includes a semiconductor stacked body, a light transmissive conductive film disposed on the semiconductor stacked body, the light transmissive conductive film including a plurality of through holes, insulation films disposed in the plurality of through holes, the plurality of through holes being disposed on the semiconductor stacked body; and a pad electrode disposed on the light transmissive conductive film and the insulation films.. .
Nichia Corporation


08/18/16
20160240752 

Light emitting diode package and method thereof


The present disclosure provides a light emitting diode package including a substrate, a first electrode and a second electrode located on a first surface of the substrate, a plurality of light emitting diodes (leds) located between the first electrode and the second electrode, a plurality of retaining ring located on the first surface of the substrate. The leds are surrounded by the retaining ring therein.
Advanced Optoelectronic Technology, Inc.


08/18/16
20160240751 

Light emitting device and manufacturing method thereof


A light-emitting device including a light-emitting unit, a packaging sealant, a transparent layer, and a reflective structure is provided. The light-emitting unit has at least one epitaxial layer and two electrodes correspondingly formed on the epitaxial layer.
Genesis Photonics Inc.


08/18/16
20160240746 

Semiconductor light-emitting device


A semiconductor light-emitting device includes: a package substrate having a mounting surface on which a first circuit pattern and a second circuit pattern are disposed; a semiconductor led chip mounted on the mounting surface, having a first surface which faces the mounting surface and on which a first electrode and a second electrode are disposed, a second surface opposing the first surface, and side surfaces located between the first surface and the second surface, the first electrode and the second electrode being connected to the first circuit pattern and the second circuit pattern, respectively; a wavelength conversion film disposed on the second surface; and a side surface inclined portion disposed on the side surfaces of the semiconductor led chip, providing inclined surfaces, and including a light-transmitting resin containing a wavelength conversion material.. .
Samsung Electronics Co., Ltd.


08/18/16
20160240742 

Method of manufacturing light emitting element


A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer.. .
Nichia Corporation


08/18/16
20160240741 

Light emitting component


A light emitting component includes an epitaxial structure, a first electrode, a conducting layer and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer.
Genesis Photonics Inc.


08/18/16
20160240740 

Led package having an array of light emitting cells coupled in series


A light emitting diode (led) package includes a package body having a recessed portion, a first lead electrode and a second lead electrode spaced apart from each other, and a light emitting device arranged in the recessed portion and electrically connected to the first lead electrode and the second lead electrode. The led package is configured to be driven by an alternating current (ac) and by a voltage higher than that for driving one light emitting diode..
Seoul Semiconductor Co., Ltd.


08/18/16
20160240732 

Light emitting component


A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer.
Genesis Photonics Inc.


08/18/16
20160240728 

Optical device and a fabricating an optical device


An optical device comprising: a photonic crystal structure, comprising: a layer of a first material, the layer comprising a quantum emitter; and a plurality of regions of a second material in the layer of the first material, the regions arranged in a regular lattice having at least one region missing from the lattice so that a defect is formed, wherein the quantum emitter is located in the defect part of the photonic crystal structure; wherein the second material has a different refractive index to the first material; and an electrode which is electrically contacted to only the defect part of the photonic crystal structure.. .
Kabushiki Kaisha Toshiba


08/18/16
20160240725 

Method of fabricating a solar cell


A method for fabricating a solar cell includes the steps of providing a substrate, forming a transparent conductive layer on a surface of the substrate, forming a plurality of photoresist patterns on the transparent conductive layer, forming a dielectric layer on the photoresist patterns and the transparent conductive layer, in which a part of a sidewall of the photoresist pattern is exposed from the dielectric layer, removing the photoresist patterns and a part of the dielectric layer covering the photoresist pattern so that a plurality of openings are defined in the remaining part of the dielectric layer, and forming plural electrodes in the openings respectively. A solar cell fabricated by the method is also disclosed..
Au Optronics Corporation


08/18/16
20160240717 

Solar cell and manufacturing method therefor


A solar cell, according to one embodiment, comprises: a support substrate; a rear electrode layer arranged on the support substrate; an optical absorption layer arranged on the rear electrode layer; a buffer layer arranged on the optical absorption layer; and a front electrode layer arranged on the buffer layer, wherein a first through-groove penetrating through the rear electrode layer and the optical absorption layer is formed on the rear electrode layer and the optical absorption layer, and the optical absorption layer comprises: a first optical absorption layer arranged on the rear electrode layer; and a second optical absorption layer arranged to make contact with an inner side surface of the rear electrode layer exposed by the first through-groove.. .
Lg Innotek Co., Ltd.


08/18/16
20160240714 

Solar cell, concentrator photovoltaic unit, concentrator photovoltaic module, and producing concentrator photovoltaic module


In a solar cell 23, a plurality of grid electrodes 31 each formed in a linear shape are arrayed on a light receiving surface 23a along the width direction of the light receiving surface 23a. The plurality of grid electrodes 31 include a first center grid electrode 31a forming a cross portion 34 exhibiting a center-specific geometry caused by electrodes crossing each other at the center of the light receiving surface 23a..

08/18/16
20160240710 

Photodetection semiconductor device having light receiving element


In order to provide a photodetection semiconductor device including a light receiving element configured to reduce afterimages, a photodiode is formed by a pn junction into a circular shape so that a uniform distance from an end portion of a light receiving element to an electrode serving as a carrier outlet is realized, to thereby enable carriers to be uniformly taken out from all directions.. .
Sii Semiconductor Corporation


08/18/16
20160240709 

Solar cell having three-dimensional p-n junction structure and manufacturing same


The present invention provides a 3-dimensional p-n junction solar cell composed of a base board coated with a back plate on the upper face of the same; a p type semiconductor thin film formed on the top side of the back plate which has a 3-dimensional porous structure and is composed of p type semiconductor crystal grains; a n type buffer layer formed on the surface of the crystal grains of the said p type semiconductor thin film with playing a role of coating the thin film; and a transparent electrode formed on the surface of the crystal grains of the p type semiconductor thin film on which the n type buffer layer is formed. The solar cell of the present invention is a p-n junction solar cell including a 3-dimensional photo catalytic thin film, which can provide an improved photoelectric conversion efficiency, compared with the conventional p-n junction solar cell, owing to the formation of the n-type buffer layer on the surface of the crystal grains of the 3-dimensional p type semiconductor thin film..
Daegu Gyeongbuk Institute Of Science And Technology


08/18/16
20160240706 

Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells


An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° c. And containing 11 to 33 wt.-% of sio2, >0 to 7 wt.-% of al2o3 and 2 to 10 wt.-% of b2o3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° c.
E I Du Pont De Nemours And Company


08/18/16
20160240705 

Solar cell, solar cell module, and manufacturing solar cell


A solar cell includes a photoelectric converter having n-type regions and p-type regions alternately arranged in a first direction on a back surface and an electrode layer provided on the back surface. The photoelectric converter includes a plurality of sub-cells arranged in a second direction intersecting with the first direction and an isolation region provided on a boundary between adjacent sub-cells.
Panasonic Intellectual Property Management Co., Ltd.


08/18/16
20160240704 

Solar cell


A solar cell according to an embodiment comprises: a support substrate; a rear electrode layer formed on the support substrate; a first through groove formed on the rear electrode layer; an optical absorption layer formed on the rear electrode layer; and a front electrode layer formed on the optical absorption layer, wherein the average surface roughness (ra1) of the support substrate, which is exposed by the first through groove, is in a range of 28 nm to 100 nm.. .
Lg Innotek Co., Ltd.


08/18/16
20160240700 

Solar battery


A solar battery according to an embodiment comprises: a support substrate; a rear electrode layer arranged on the support substrate; a light absorbing layer arranged on the rear electrode layer; a buffer layer arranged on the light absorbing layer; and a front electrode layer arranged on the buffer layer, wherein the buffer layer comprises zn(o,s), and the content of sulfur (s) in the buffer layer increases towards the front electrode layer starting from the light absorbing layer. .
Lg Innotek Co., Ltd.


08/18/16
20160240697 

Solar cell module


The solar cell module according to the present invention includes: a supporting substrate; a back electrode layer arranged on the supporting substrate; a light absorbing layer arranged on the back electrode layer; a front electrode layer arranged on the light absorbing layer; and a bus bar arranged to be in contact with the top and side surfaces of the back electrode layer. In the solar cell according to an embodiment, the bus bar is arranged to be in contact with the top and side surfaces of the back electrode layer, which enables charge transfer both in the direction of the top surface and in the direction of the side surface, thereby facilitating the transfer of charge moving on the back electrode layer in the direction of the bus bar.
Lg Innotek Co., Ltd.


08/18/16
20160240691 

Thin film transistor array substrate and manufacturing the same


A thin film transistor array substrate includes a first conductive pattern group including a gate line extending along a first direction, data lines extending along a second direction crossing the first direction and spaced apart from each other along the second direction with the gate line there between, and a gate electrode protruding from the gate line, an active pattern disposed on the gate electrode to overlap the gate electrode, a second conductive pattern group including a bridge pattern coupling the data lines, a source electrode extending to an upper portion of the active pattern from the bridge pattern and a drain electrode spaced apart from the source electrode, facing the source electrode and disposed on the active pattern and metal patterns each stacked between the active pattern and the source electrode and between the active pattern and the drain electrode.. .
Samsung Display Co., Ltd.


08/18/16
20160240690 

Semiconductor device


A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided.
Semiconductor Energy Laboratory Co., Ltd.


08/18/16
20160240689 

Thin film transistor


A thin film transistor is provided, and includes a gate electrode, a first gate dielectric layer, a second gate dielectric layer, a channel layer, a source electrode and a drain electrode. The gate electrode is disposed on a substrate.
Hannstar Display Corporation


08/18/16
20160240688 

Thin film transistor, display apparatus including the thin film transistor, and manufacturing the thin film transistor


A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on the semiconductor layer, a gate insulating layer disposed between the semiconductor layer and the first and second gate electrodes and having a first through hole between the first and second gate electrodes and a capping layer covering the first gate electrode and contacting the semiconductor layer via the first through hole. The capping layer includes a conductive material..
Samsung Display Co., Ltd.


08/18/16
20160240685 

Semiconductor device and electronic device including the semiconductor device


In a semiconductor device including a transistor, an oxygen release type oxide insulating film is formed in contact with a channel formation region of the transistor. The channel formation region is formed in an oxide semiconductor film.
Semiconductor Energy Laboratory Co., Ltd.


08/18/16
20160240683 

Semiconductor device and display device including the semiconductor device


To reduce parasitic capacitance in a semiconductor device having a transistor including an oxide semiconductor. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide semiconductor film over the first gate insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film.
Semiconductor Energy Laboratory Co., Ltd.


08/18/16
20160240681 

Stacked gate-all-around finfet and ming the same


A device includes a first semiconductor strip, a first gate dielectric encircling the first semiconductor strip, a second semiconductor strip overlapping the first semiconductor strip, and a second gate dielectric encircling the second semiconductor strip. The first gate dielectric contacts the first gate dielectric.
Taiwan Semiconductor Manufacturing Company, Ltd.


08/18/16
20160240676 

Reacted conductive gate electrodes and methods of making the same


A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium.
Taiwan Semiconductor Manufacturing Company, Ltd.


08/18/16
20160240674 

Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion


A semiconductor device including a gate electrode disposed on a semiconductor substrate and source/drain regions disposed at both sides of the gate electrode, the source/drain regions being formed by implanting impurities. The source/drain regions include an epitaxial layer formed by epitaxially growing a semiconductor material having a different lattice constant from that of the semiconductor substrate in a recessed position at a side of the gate electrode, and a diffusion layer disposed in a surface layer of the semiconductor substrate..
Sony Corporation


08/18/16
20160240667 

Medium high voltage mosfet device


A semiconductor device includes a medium voltage mosfet having a vertical drain drift region between resurf trenches containing field plates which are electrically coupled to a source electrode of the mosfet. A split gate with a central opening is disposed above the drain drift region between the resurf trenches.
Texas Instruments Incorporated


08/18/16
20160240666 

Semiconductor device and manufacturing method thereof


A device includes a first and a second semiconductor-layer. The second semiconductor-layer is on the first semiconductor-layer, and has a first and a second side-surface.
Kabushiki Kaisha Toshiba


08/18/16
20160240664 

Semiconductor device


There is provided a semiconductor device having ldmos transistors embedded in a semiconductor substrate to boost source-drain breakdown voltage, with arrangements to prevent fluctuations of element characteristics caused by electric field concentration so that the reliability of the semiconductor device is improved. A trench is formed over the upper surface of a separation insulating film of each ldmos transistor, the trench having a gate electrode partially embedded therein.
Renesas Electronics Corporation


08/18/16
20160240662 

Power integrated devices, electronic devices and electronic systems including the same


A power integrated device includes a channel region, a source region, a drift region, and a drain region. A stacked gate includes a gate insulation layer and a gate electrode.
Sk Hynix Inc.


08/18/16
20160240661 

Semiconductor device comprising a transistor array and a termination region and manufacturing such a semiconductor device


A semiconductor device formed in a semiconductor substrate having a first main surface comprises a transistor array and a termination region. The transistor array comprises a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region.

08/18/16
20160240659 

Laterally diffused metal oxide semiconductor device and manufacturing method therefor


An ldmos device, comprising a substrate (202), a gate electrode (211) on the substrate (202), a buried layer area in the substrate (202), and a diffusion layer on the buried layer area, wherein the buried layer area comprises a first buried layer (201) and a second buried layer (203), wherein the conduction types of impurities doped in the first buried layer (201) and the second buried layer (203) are opposite; the diffusion layer comprises a first diffusion area (205) and a second diffusion area (206), wherein the first diffusion area (205) is located on the first buried layer (201) and abuts against the first buried layer (201), and the second diffusion area (206) is located on the second buried layer (203) and abuts against the second buried layer (203); and the conduction types of impurities doped in the first buried layer (201) and the first diffusion area (205) are the same, and the conduction types of impurities doped in the second buried layer (203) and the second diffusion area (206) are the same. Additionally, also disclosed is a manufacturing method for the ldmos device.
Csmc Technologies Fab1 Co., Ltd.


08/18/16
20160240656 

Silicon carbide semiconductor device and manufacturing the same


A silicon carbide semiconductor device includes a silicon carbide semiconductor layer having a main surface, the main surface of the silicon carbide semiconductor layer being provided with a trench having a closed shape when seen in plan view, the trench including a bottom, a plurality of sidewalls continuous with the bottom, and a sidewall-connecting corner portion at a connection portion between two adjacent sidewalls of the plurality of sidewalls, the silicon carbide semiconductor device further including a gate insulating film covering the bottom and the sidewalls of the trench, and a gate electrode provided on the gate insulating film, between the bottom and an upper end of the trench, the thickness of the gate insulating film at the sidewall-connecting corner portion of the trench being greater than the thickness of the gate insulating film at a portion other than the sidewall-connecting corner portion.. .
Sumitomo Electric Industries, Ltd.


08/18/16
20160240653 

Medium high voltage mosfet device


A semiconductor device includes a medium voltage mosfet having a vertical drain drift region between resurf trenches containing field plates which are electrically coupled to a source electrode of the mosfet. A split gate with a central opening is disposed above the drain drift region between the resurf trenches.
Texas Instruments Incorporated


08/18/16
20160240648 

Semiconductor device and manufacturing the same


A semiconductor device includes a first nitride semiconductor layer formed above a substrate, a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a band gap larger than that of the first nitride semiconductor layer, a trench passing through the second nitride semiconductor layer and into the first nitride semiconductor layer, a gate insulation film formed in the trench, and a gate electrode disposed by way of the gate insulation film in an inside of the trench. The corner of the trench between a side wall of the trench and a bottom of the trench includes a rounded shape, and a corner of the gate insulation film in contact with the corner of the trench includes a rounded shape..
Renesas Electronics Corporation


08/18/16
20160240647 

Multi-finger large periphery alinn/aln/gan metal-oxide-semiconductor heterostructure field effect transistors on sapphire substrate


Moshfet devices are provided, along with their methods of fabrication. The moshfet device can include a substrate; a multilayer stack on the substrate; a ultra-thin barrier layer on the multilayer stack, wherein the ultra-thin barrier layer has a thickness of about 0.5 nm to about 10 nm; a dielectric, discontinuous thin film layer on portions of the ultra-thin barrier layer, wherein the dielectric, discontinuous thin film layer comprises sio2; a plurality of source electrodes and drain electrodes formed directly on the ultra-thin barrier layer in an alternating pattern such that the dielectric, discontinuous thin film layer is positioned between adjacent source electrodes and drain electrodes; a plurality of gate electrodes on the dielectric, discontinuous thin film layer; and a gate interconnect electrically connecting the plurality of gate electrodes..
University Of South Carolina


08/18/16
20160240646 

Low damage passivation layer for iii-v based devices


The present disclosure relates to a structure and method of forming a low damage passivation layer for iii-v hemt devices. In some embodiments, the structure has a bulk buffer layer disposed over a substrate and a device layer of iii-v material disposed over the bulk buffer layer.
Taiwan Semiconductor Manufacturing Co., Ltd.


08/18/16
20160240645 

Semiconductor device


In an embodiment, a semiconductor device includes a substrate, a group iii nitride-based semiconductor layer formed on the substrate, a first current electrode and a second current electrode formed on the group iii nitride-based semiconductor layer and spaced from each other, and a control electrode formed on the group iii nitride-based semiconductor layer between the first current electrode and the second current electrode. The control electrode includes at least a middle portion, configured to switch off a channel below the middle portion when a first voltage is applied to the control electrode, and second portions adjoining the middle portion.
Infineon Technologies Austria Ag


08/18/16
20160240643 

Semiconductor device


A switching loss is prevented from being deteriorated by suppressing increase in a gate capacitance due to a cell shrink of an ie type trench gate igbt. A cell formation region is configured of a linear active cell region, a linear hole collector cell region, and a linear inactive cell region between them.
Renesas Electronics Corporation


08/18/16
20160240641 

Semiconductor device and manufacturing the semiconductor device


A semiconductor device includes: a semiconductor substrate, an upper electrode, a lower electrode and a gate electrode. In the semiconductor substrate, a body region, a pillar region, and a barrier region are formed.
Toyota Jidosha Kabushiki Kaisha


08/18/16
20160240640 

Power semiconductor device


A semiconductor substrate has a first surface and a second surface. A gate electrode has a part buried in a first trench.
Mitsubishi Electric Corporation


08/18/16
20160240639 

Semiconductor device


A semiconductor device includes: metal collector layer on backside, p-type collector layer, n-type field stop layer, n-drift layer and n-type cs layer within the n-drift layer near the top side. Multiple trench structures are formed by polysilicon core and gate oxide layer near the front side.
Changzhou Zhongmin Semi-tech Co. Ltd.


08/18/16
20160240638 

Semiconductor device


Provided is a semiconductor device including a plurality of trenches, including an emitter electrode; a floating layer of a first conduction type provided between adjacent trenches; and a low-dielectric-constant film provided between the floating layer and the emitter electrode, in which a dielectric constant of the low-dielectric-constant film is less than 3.9. Also provided is a semiconductor device further including a gate electrode formed in the trenches, in which capacitance between the gate electrode and the floating layer is greater than capacitance between the emitter electrode and the floating layer..
Fuji Electric Co., Ltd.


08/18/16
20160240637 

Semiconductor device and semiconductor module


In a semiconductor device, an element forming region formed with a semiconductor element for controlling a current is defined on a surface of a semiconductor substrate. A termination region is defined so as to surround the element forming region.
Mitsubishi Electric Corporation


08/18/16
20160240635 

Semiconductor device


A semiconductor device includes a first main electrode; a second main electrode; a first semiconductor region of a first conductivity type; a second semiconductor region of the first conductivity type; a third semiconductor region of a second conductivity type arranged between the first semiconductor region and the second semiconductor region; and a depletion layer suppression region arranged inside of the third semiconductor region and being configured to suppress a spread of a depletion layer extending in the third semiconductor region when a reverse bias voltage is applied between the second semiconductor region and the third semiconductor region. The third semiconductor region includes a shortest region where a distance between a first boundary surface and a second boundary surface is shortest, and the shortest region includes a region where the depletion layer suppression region does not exist between the first boundary surface and the second boundary surface..
Toyota Jidosha Kabushiki Kaisha


08/18/16
20160240633 

Semiconductor device


A p-type well is formed in a semiconductor substrate, and an n+-type semiconductor region and a p+-type semiconductor region are formed in the p-type well to be spaced apart from each other. The n+-type semiconductor region is an emitter semiconductor region of a bipolar transistor, and the p-type well and the p+-type semiconductor region are base semiconductor regions of the bipolar transistor.
Renesas Electronics Corporation


08/18/16
20160240630 

Semiconductor devices and methods for fabricating the same


The inventive concept relates to a semiconductor device and a method for fabricating the same. The semiconductor device comprises active patterns protruding from a substrate, an interlayer dielectric layer disposed on the substrate and including grooves exposing the active patterns, and gate electrodes in the grooves.

08/18/16
20160240625 

Semiconductor device


The present invention makes it possible to lower the on resistance of a semiconductor element without hindering the function of a diffusion prevention film in a semiconductor device having the semiconductor element that uses a wire in a wiring layer as a gate electrode and has a gate insulation film in an identical layer to the diffusion prevention film. A first wire and a gate electrode are embedded into the surface layer of an insulation layer comprising a first wiring layer.
Renesas Electronics Corporation


08/18/16
20160240621 

Insulating block in a semiconductor trench


A semiconductor device is produced by: creating an opening in a mask formed on a semiconductor body; creating, underneath the opening, a trench in the semiconductor body which has a side wall and a trench bottom; creating, while the mask is on the semiconductor body, an insulating layer covering the trench bottom and the side wall; depositing a spacer layer including a first electrode material on the insulating layer; removing the spacer layer from at least a portion of the insulating layer that covers the trench bottom; filling at least a portion of the trench with an insulating material; removing the part of the insulating material laterally confined by the spacer layer so as to leave an insulating block in the trench; and filling at least a portion of the trench with a second electrode material so as to form an electrode within the trench.. .
Infineon Technologies Austria Ag


08/18/16
20160240615 

Semiconductor device and a forming a semiconductor device


A semiconductor device comprises at least one strip-shaped cell compensation region of a vertical electrical element arrangement, at least one strip-shaped edge compensation region and a bridge structure. The at least one strip-shaped cell compensation regions extends into a semiconductor substrate and comprises a first conductivity type.
Infineon Technologies Austria Ag


08/18/16
20160240614 

Semiconductor device and semiconductor package


A semiconductor device according to an embodiment includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a first electrode, a gate electrode, a third insulating layer, a second electrode, a third electrode, and a fourth electrode. The third insulating layer is provided between the gate electrode and the first semiconductor region, between the gate electrode and the second semiconductor region, and between the gate electrode and the third semiconductor region.
Kabushiki Kaisha Toshiba


08/18/16
20160240612 

Non-planar semiconductor device having group iii-v material active region with multi-dielectric gate stack


Non-planar semiconductor devices having group iii-v material active regions with multi-dielectric gate stacks are described. For example, a semiconductor device includes a hetero-structure disposed above a substrate.

08/18/16
20160240604 

Organic light emitting display devices and methods of manufacturing organic light emitting display devices


An inter-layer bridging connection is provided in an organic light emitting display and a method of manufacturing the same is provided. The organic light emitting display device is subdivided into a major interior, first region i, an auxiliary power coupling region ii and a peripheral power line region iii where the second region (ii) extends at least partially around the first region, and the third region (iii) extends at least partially around the second region.
Samsung Display Co., Ltd.


08/18/16
20160240600 

Light emitting device


A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line.
Semiconductor Energy Laboratory Co., Ltd.


08/18/16
20160240599 

Manufacturing method and structure of thin film transistor backplane


The present invention provides a manufacture method of a thin film transistor backplane, comprising steps of: providing a substrate (20) with a gate (21), an insulation layer (22) and a semiconducting layer (23); sequentially forming a second metal layer, a reflecting electrode layer and a conductive oxide layer on the substrate (20); implementing one photolithographic process to the second metal layer, the reflecting electrode layer and the conductive oxide layer to pattern the second metal layer, the reflecting electrode layer and the conductive oxide layer for respectively forming a source/a drain (253), a reflecting electrode (252) and a pixel electrode (251), and the source/the drain (253) are connected to the semiconducting layer (23; forming a protective layer on the source/the drain (253), the reflecting electrode (252) and the pixel electrode (251; forming a flat and pixel defining layer (27) on the protective layer (26); forming a photospacer (28) on the flat and pixel defining layer (27).. .
Shenzhen China Star Optoelectronics Technology Co., Ltd.


08/18/16
20160240598 

Organic light-emitting diode display and manufacturing the same


An organic light-emitting diode (oled) display and a method of manufacturing an oled display are disclosed. In one aspect, the display includes a display substrate including a display area and a non-display area surrounding the display area.
Samsung Display Co., Ltd.


08/18/16
20160240595 

Organic light-emitting diode display


An organic light-emitting diode (oled) display is disclosed. In one aspect, the oled display includes a substrate including a pixel region including a plurality of pixels.
Samsung Display Co., Ltd.


08/18/16
20160240591 

Display device and electrical device using the same


A display device includes: a substrate comprising a first region and a second region bent relative to the first region; a plurality of first pixels at the first region, each of the first pixels comprising a first light-emitting diode (led), the first led comprising a pixel electrode, an emission layer for emitting light of a first color, and a counter electrode; a plurality of second pixels at the second region, each of the second pixels comprising a second led, the second led comprising a pixel electrode, an emission layer configured to emit the first color, and a counter electrode; and an optical resonance layer at the second region corresponding to the second led.. .
Samsung Display Co., Ltd.


08/18/16
20160240589 

Organic light emitting diode display device


An organic light emitting diode (oled) display device includes: a first substrate comprising red, green, and blue pixel areas; a first electrode on the first substrate; red, green, and blue organic light emitting layers on the first electrode at the red, green, and blue pixel areas, respectively; a second electrode on the red, green, and blue organic light emitting layers; a capping layer on the second electrode, and having a greater thickness at the red and green pixel areas than a thickness at the blue pixel area; a thin film encapsulation layer on the capping layer; and a red color filter on the thin film encapsulation layer at the red pixel area.. .
Samsung Display Co., Ltd.


08/18/16
20160240587 

Horizontally oriented and vertically stacked memory cells


Horizontally oriented and vertically stacked memory cells are described herein. One or more method embodiments include forming a vertical stack having a first insulator material, a first memory cell material on the first insulator material, a second insulator material on the first memory cell material, a second memory cell material on the second insulator material, and a third insulator material on the second memory cell material, forming an electrode adjacent a first side of the first memory cell material and a first side of the second memory cell material, and forming an electrode adjacent a second side of the first memory cell material and a second side of the second memory cell material..
Micron Technology, Inc.


08/18/16
20160240580 

Photodetecting device and manufacturing method thereof, and image sensor and manufacturing method thereof


A photodetecting device, a method of manufacturing the photodetecting device, an image sensor, and a method of manufacturing the image sensor are provided. The photodetecting device includes a first insulation layer, a silicon layer disposed on the first insulation layer, a metal plug disposed through the first insulation layer and the silicon layer, a silicon wire disposed on the silicon layer, and an electrode connected to the silicon wire..
Samsung Electronics Co., Ltd.


08/18/16
20160240564 

Semiconductor device and semiconductor device manufacturing method


A semiconductor device has a p-type metal oxide semiconductor layer; a source electrode connected with the p-type metal oxide semiconductor layer; a drain electrode connected with the p-type metal oxide semiconductor layer; and a gate electrode arranged to oppose to a part of the p-type metal oxide semiconductor layer. The gate electrode and the drain electrode are separated from each other in a top view..
Renesas Electronics Corporation


08/18/16
20160240562 

Semiconductor device and manufacturing the same


An object is to provide a display device with high productivity by reducing the number of masks and the number of steps. Another object is to provide a display device with high yield.
Semiconductor Energy Laboratory Co., Ltd.


08/18/16
20160240561 

Semiconductor light emitting device


According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer. The third semiconductor is provided between the first semiconductor layer and the second semiconductor layer.
Kabushiki Kaisha Toshiba


08/18/16
20160240560 

Thin film transistor substrate and in-cell touch display panel using same


The present disclosure provides a thin film transistor (tft) substrate. The tft substrate includes a first metal layer, a second metal layer, a first transparent layer, a third metal layer, and a second transparent layer.
Hon Hai Precision Industry Co., Ltd.


08/18/16
20160240559 

Thin film transistor substrate and display panel comprising the same


A display panel is provided, which includes a substrate and a first metal layer on the substrate. The first metal layer includes a gate electrode and a gate line connecting to the gate electrode.
Innolux Corporation


08/18/16
20160240557 

Array substrate and manufacturing method thereof, and display device including the array substrate


An array substrate and manufacturing method thereof and a display device having the array substrate are provided. The array substrate includes a non-pixel region distributed in the form of a grid and a plurality of sub-pixel regions formed by being surrounded by the non-pixel region, a plurality of scan lines (12) and data lines (16) disposed in a crossing manner are provided within the non-pixel region, and a common electrode (20) is provided in the sub-pixel regions and the non-pixel region.
Boe Technology Group Co., Ltd.


08/18/16
20160240556 

Nonvolatile semiconductor memory device and manufacturing the same


A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.. .
Kabushiki Kaisha Toshiba


08/18/16
20160240554 

Non-volatile semiconductor storage device and manufacturing the same


A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer.
Kabushiki Kaisha Toshiba


08/18/16
20160240553 

Nonvolatile memory device and manufacturing the same


A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern.. .
Samsung Electronics Co., Ltd.


08/18/16
20160240552 

Semiconductor memory device and manufacturing same


According to one embodiment, a semiconductor memory device includes a substrate; a conductive layer provided on the substrate; a stacked body provided on the conductive layer and including a plurality of electrode layers separately stacked each other; a coupling portion provided in the conductive layer; a semiconductor portion provided integrally in the stacked body and in the coupling portion; a charge storage film provided between the semiconductor portion and the plurality of electrode layers; and an interconnect portion provided integrally in the stacked body and in the conductive layer and extending in a stacking direction of the stacked body. The interconnect portion includes a side surface provided in the conductive layer, and the side surface is in contact with an entire side surface of the semiconductor portion in the coupling portion..
Kabushiki Kaisha Toshiba


08/18/16
20160240550 

Non-volatile memory devices including charge storage layers


A non-volatile memory device includes gate electrodes stacked on a substrate, a semiconductor pattern penetrating the gate electrodes and connected to the substrate, and a charge storage layer between the semiconductor pattern and the gate electrodes. The charge storage layer includes a first charge storage layer between the semiconductor pattern and the gate electrodes, a second charge storage layer between the first charge storage layer and the semiconductor pattern, and a third charge storage layer between the first charge storage layer and the gate electrodes.

08/18/16
20160240545 

Memory cells


A memory cell includes a select device and a capacitor electrically coupled in series with the select device. The capacitor includes two conductive capacitor electrodes having ferroelectric material there-between.
Micron Technology, Inc.


08/18/16
20160240543 

Semiconductor device manufacturing method and semiconductor device


A semiconductor device manufacturing method includes: forming an element isolation insulating film in a semiconductor substrate; forming a first film on a surface of the semiconductor substrate; forming a second film on the element isolation insulating film and on the first film; forming a first resist pattern that includes a first open above the element isolation insulating film in a first region; removing the second film on the element isolation insulating film in the first region to separate the second film in the first region into a plurality of parts by performing first etching; forming a third film on the second film in the first region; forming a first gate electrode on the third film in the first region; and forming a first insulating film that includes the first to third films under the first gate electrode by patterning the first to third films.. .
Fujitsu Semiconductor Limited


08/18/16
20160240538 

Semiconductor device having buried gate, fabricating the same, and module and system having the same


A semiconductor device includes junction regions formed in upper portions of both sidewalls of a trench formed in a semiconductor substrate, a first gate electrode buried in the trench and having a stepped upper surface, and a second gate electrode formed on the first gate electrode to overlap a junction region.. .
Sk Hynix Inc.


08/18/16
20160240537 

Semiconductor device including fin structures and manufacturing method thereof


A semiconductor device includes a fin fet transistor. The fin fet transistor includes a first fin structure extending in a first direction, a gate stack and a source and a drain.
Taiwan Semiconductor Manufacturing Co., Ltd.


08/18/16
20160240517 

Display device using semiconductor light emitting devices


A display device including a wiring substrate having a wiring electrode; a plurality of semiconductor light emitting devices which form pixels; and a conductive adhesive layer configured to electrically connect the wiring electrode with the plurality of semiconductor light emitting devices. Further, the conductive adhesive layer includes a body provided with a resin having an adhesive property; and a metallic aggregation part disposed in the body, and formed as metallic atoms precipitated from a metal-organic compound and aggregated with each other..
Lg Electronics Inc.


08/18/16
20160240504 

Method for manufacturing semiconductor device


A method for manufacturing a semiconductor device includes a first step of forming a first electrode on one main surface side of a semiconductor wafer; a second step of bonding a first film to another main surface side of the semiconductor wafer; a third step of bonding a second film to an outer peripheral portion of the semiconductor wafer by applying pressure to the second film on the semiconductor wafer using a plurality of cylindrical rollers, after the second step; and a fourth step of forming a plating layer on the first electrode on the one main surface side of the semiconductor wafer by a plating process, after the third step.. .
Fuji Electric Co., Ltd.


08/18/16
20160240499 

Semiconductor device and manufacturing the same


The semiconductor device includes a plurality of wiring layers formed on a semiconductor substrate, a pad formed on an uppermost wiring layer of the plurality of wiring layers, a surface protection film which includes an opening on the pad and is made of an inorganic insulating film, a rewiring formed on the surface protection film; a pad electrode formed on the rewiring, and a wire connected to the pad electrode. The rewiring includes a pad electrode mounting portion on which the pad electrode is mounted, a connection portion which is connected to the pad, and an extended wiring portion which couples the pad electrode mounting portion and the connection portion, and the pad electrode mounting portion has a rectangular shape when seen in a plan view..

08/18/16
20160240490 

Method for fabricating semiconductor devices having reinforcing elements


The present disclosure provides a method for fabricating semiconductor devices having reinforcing elements. The method includes steps of providing a first wafer having a lower electrode layer and an insulation layer; forming a device layer; etching the device layer and the insulation layer to form recesses; etching the device layer to form separation trenches and upper electrodes; forming reinforcing elements; and depositing metal pads.
Asia Pacific Microsystems, Inc.


08/18/16
20160240484 

Semiconductor device and manufacturing same


To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a cu film, an ni film, and a pd film which have been formed successively from the side of a semiconductor substrate.
Renesas Electronics Corporation


08/18/16
20160240450 

Semiconductor device


A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces.
Rohm Co., Ltd.


08/18/16
20160240426 

Substrate support with improved rf return


Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a body having a support surface; an rf electrode disposed in the body proximate the support surface to receive rf current from an rf source; a shaft to support the body; a conductive element having an interior volume and extending through the shaft, wherein the conductive element is coupled to the rf electrode; and an rf gasket; wherein the conductive element includes features that engage the rf gasket to return the rf current to ground..
Applied Materials, Inc.


08/18/16
20160240422 

Electrostatic chuck device


Provided is an electrostatic chuck device in which breakdown between an electrostatic chuck portion and a cooling base portion can be prevented, voltage endurance can be improved, uniformity in the in-plane temperature of a mounting surface of the electrostatic chuck portion where a plate-shaped sample is mounted can be improved, and voltage endurance of a heating member can be improved by applying a uniform voltage between the electrostatic chuck portion and the cooling base portion. An electrostatic chuck device (10) includes: an electrostatic chuck portion (11) that includes a ceramic plate-shaped body and an internal electrode 18 for electrostatic adsorption; and a cooling base portion (12) that adjusts a temperature of the internal electrode (18) for electrostatic adsorption, in which a first insulating member (20) is adhered to a second main surface of the ceramic plate-shaped body through a first adhesive (19) so as to cover a periphery of the internal electrode for electrostatic adsorption (18), a second insulating member (14) is adhered to a top surface of the cooling base portion (12) through a second adhesive (13), a heating member (15) is provided on a top surface of the second insulating member (14), and the electrostatic chuck portion (11) and the cooling base portion (12) are adhered to each other and integrated through an organic adhesive layer (16)..
Sumitomo Osaka Cement Co., Ltd.


08/18/16
20160240394 

Semiconductor device manufacturing method


A method for producing a semiconductor device includes: a step a of preparing a chip with sheet-shaped resin composition in which a sheet-shaped resin composition is pasted onto a bump formation surface of a semiconductor chip, a step b of preparing a substrate for mounting on which an electrode is formed, a step c of pasting the chip with resin composition to the substrate for mounting so that the resin composition serves as a pasting surface with the bump formed on the semiconductor chip facing toward the electrode formed on the substrate for mounting, a step d of heating the resin composition to semi-cure the resin composition after the step c, and a step e of heating the resin composition at a higher temperature than that in the step d to cure the resin composition after the step d while bonding the bump and the electrode.. .
Nitto Denko Corporation


08/18/16
20160240385 

Gate electrode material residual removal process


The present disclosure provides methods for removing gate electrode residuals from a gate structure after a gate electrode patterning process. In one example, a method for forming high aspect ratio features in a gate electrode layer in a gate structure includes performing an surface treatment process on gate electrode residuals remaining on a gate structure disposed on a substrate, selectively forming a treated residual in the gate structure on the substrate with some untreated regions nearby in the gate structure, and performing a remote plasma residual removal process to remove the treated residual from the substrate..
Applied Materials, Inc.


08/18/16
20160240365 

Light-emitting sealed body


In a light-emitting sealed body, a metal structure (electron emission structure) containing an easily electron-emitting material is used, so that it is not necessary to perform feeding for discharge between electrodes. Therefore, a feeding member does not need to be connected to the metal structure from the outside of a bulb.
Hamamatsu Photonics K.k.


08/18/16
20160240364 

Mass spectrometer


A mass spectrometer includes: an ionization unit configured to ionize an analyte gas; a filter unit configured to allow passage of only a target ion which is a component of the analyte gas ionized in the ionization unit and which has a specific mass-to-charge ratio; and an ion detection unit configured to detect an ion detection value based on the target ion having passed through the filter unit, wherein the ion detection unit includes a faraday electrode which includes an electrode portion disposed along a centerline of the filter unit and a bottom electrode provided at a position downstream of the electrode portion in a flow of the target ion, the electrode portion and the bottom electrode being connected to each other, a secondary electron multiplier provided to face the electrode portion with the centerline located therebetween, and a blocking portion connected to the bottom electrode.. .
Canon Anelva Corporation


08/18/16
20160240347 

Signal charged particle deflection device, signal charged particle detection system, charged particle beam device and detection of a signal charged particle beam


A signal charged particle deflection device for a charged particle beam device is provided. The signal charged particle deflection device includes a beam bender configured for deflecting the signal charged particle beam, wherein the beam bender includes a first electrode and a second electrode providing an optical path for the signal charged particle beam therebetween, wherein the first electrode has a first cross section in a plane perpendicular to the optical path, and the second electrode has a second cross section in the plane perpendicular to the optical path, and wherein a first part of the first cross section and a second part of the second cross section provide the optical path therebetween, and wherein the first part and the second part are different in shape..
Ict Integrated Circuit Testing Gesellschaft Für Halbleiterprüftechnik Mbh


08/18/16
20160240346 

Plasma ion source and charged particle beam apparatus


A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; an insulation member provided in the gas introduction chamber; a plasma generation chamber connected to the gas introduction chamber; a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; and an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein, wherein a size of the through-holes is smaller than a length of a plasma sheath.. .
Hitachi High-technologies Corporation


08/18/16
20160240328 

Titanium oxide-based supercapacitor electrode material and manufacturing same


A titanium oxide-based supercapacitor electrode material and a method of manufacturing same. A reactive substance of the titanium oxide-based supercapacitor electrode material is a conductive titanium oxide.
Shanghai Institute Of Ceramics, Chinese Academy Of Sciences


08/18/16
20160240327 

Capacitor unit with high-energy storage


The present invention provides a capacitor unit with high-energy storage which includes an electrolyte, a positive electrode, and a negative electrode. The electrolyte includes an electrically conductive polymer composition.
Apaq Technology Co., Ltd.


08/18/16
20160240326 

Electrodes for electrochemical cells


The electrode (10) includes an electrically conductive surface (14) with a galvanic pellicle, or carbon nanotube mat (18), secured to the conductive surface (14). The pellicle (18) has a first surface (20) and an opposed outer surface (22) and defines an uncompressed thickness dimension (24) as a longest length of a straight axis (26) extending from the first surface (20) to the outer surface (22) of an uncompressed section (28) of the galvanic pellicle (18).

08/18/16
20160240325 

Power storage device and electronic device


A power storage device having flexibility is provided. A power storage device of which the capacity is not likely to deteriorate even when being curved is provided.
Semiconductor Energy Laboratory Co., Ltd.


08/18/16
20160240324 

Process for manufacturing an alkaline-based hybrid supercapacitor type battery, battery obtained by this process and process for recycling an anode material of an alkali-ion battery


A process is provided for manufacturing an alkaline-based hybrid supercapacitor type battery, to an alkaline-based hybrid supercapacitor type battery, and to a process for recycling a negative electrode of an alkali-ion battery. The process for manufacturing the alkaline-based hybrid supercapacitor type battery comprises forming a negative electrode a from an electrode material b originating from a used alkali-ion battery having lost at least some of its initial capacity.
Commissariat A L'energie Atomique Et Aux Energies Alternatives


08/18/16
20160240320 

Curved rf electrode for improved cmax


The present invention generally relates to a mems device and a method of manufacture thereof. The rf electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface as of the movable plate.
Cavendish Kinetics, Inc.


08/18/16
20160240319 

Multilayer feedthrough capacitor


An element body includes principal surfaces opposing each other in a first direction, first side surfaces opposing each other in a second direction perpendicular to the first direction, and second side surfaces opposing each other in a third direction perpendicular to the first and second directions. A length in the first direction of the element body is smaller than a length in the second direction of the element body and a length in the third direction of the element body.
Tdk Corporation


08/18/16
20160240317 

Multilayer ceramic electronic component


A multilayer ceramic electronic component includes a ceramic body having a plurality of dielectric layers and internal electrodes having lead portions narrower than capacitance portions, the first and second external electrodes and dummy electrodes, wherein the first and second external electrodes disposed on both end surfaces of the ceramic body in the length direction, to be connected to the first and second lead portions, respectively, and dummy electrodes disposed on positions of margin portions of the dielectric layers corresponding to the first and second lead portions, to be spaced apart from the first and second internal electrodes, in a width direction of the ceramic body.. .
Samsung Electro-mechanics Co., Ltd.


08/18/16
20160240316 

Multilayer capacitor


A length in a first direction of an element body is smaller than a length in a second direction of the element body and smaller than a length in a third direction of the element body, the second direction being perpendicular to the first direction, the third direction being perpendicular to the first and second direction. A difference between a maximum thickness and a minimum thickness of a first electrode portion is smaller than a difference between a maximum thickness and a minimum thickness of a second electrode portion.
Tdk Corporation


08/18/16
20160240315 

Multilayer capacitor


A length in a first direction of the element body is smaller than a length in a second direction of the element body and smaller than a length in a third direction of the element body, the second direction being perpendicular to the first direction, the third direction being perpendicular to the first and second direction. Each of a first terminal electrode and a second terminal electrode includes a sintered conductor layer formed on the element body, a first plated layer formed on the sintered conductor layer, and a second plated layer formed on the first plated layer.
Tdk Corporation


08/18/16
20160240313 

Cog dielectric composition for use with nickel electrodes


Multilayer ceramic chip capacitors which satisfy cog requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys may be used for internal and external electrodes are disclosed. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown.
Ferro Corporation


08/18/16
20160240312 

Low temperature multilayer dielectric film for passivation and capacitor


The present disclosure generally relates to capacitors having a multilayer dielectric material between two electrodes. The multilayer dielectric material can have a small thickness with little to no breakdown strength reduction.
Applied Materials, Inc.


08/18/16
20160240311 

Multilayer ceramic electronic component and board having the same


A multilayer ceramic electronic component includes: a ceramic body including a capacitance forming part in which first and second dielectric layers are alternately disposed; and external electrodes disposed on both end surfaces of the ceramic body. The capacitance forming part includes first and second internal electrodes, first floating electrodes, and second floating electrodes.
Samsung Electro-mechanics Co., Ltd.


08/18/16
20160240310 

Multilayer ceramic electronic component and board having the same


A multilayer ceramic electronic component includes a capacitance forming part in which a plurality of first and second dielectric layers are alternately disposed. The capacitance forming part includes first and second internal electrodes disposed to be spaced apart from each other.
Samsung Electro-mechanics Co., Ltd.


08/18/16
20160240306 

Coil component


A coil component has a core having a winding core portion and a flange portion disposed on each of both ends of the winding core portion, the flange portion including a foot portion; a wire wound around the winding core portion; an electrode portion disposed on a bottom surface of the foot portion of the flange portion and connected to the wire; a metal terminal to be connected via a mounting solder to a mounting substrate; and a joining member connecting the metal terminal to the electrode portion. The joining member has a heat resistance property retaining a connection state between the electrode portion and the metal terminal at least at the melting point of the mounting solder..
Murata Manufacturing Co., Ltd.


08/18/16
20160240305 

Coil component


A coil component has a core having a winding core portion and first and second flange portions, a plurality of wires wound around the winding core portion, and a plurality of electrode portions disposed on the first and second flange portions. The first wire and the third wire cross each other on the first flange portion.
Murata Manufacturing Co., Ltd.


08/18/16
20160240291 

Chip resistor and manufacturing the same


A chip resistor includes: a resistor body having a front surface and a mounting surface which face in opposite directions; a pair of electrodes which are disposed on both sides of the resistor body with the resistor body sandwiched therebetween and are in electrical conduction with the resistor body; and a protective film covering a portion of the resistor body, wherein a plurality of grooves, which does not penetrate through the resistor body, is formed in the front surface of the resistor body.. .
Rohm Co., Ltd.


08/18/16
20160240161 

Liquid crystal display


A liquid crystal display according to an exemplary embodiment includes a first substrate, a gate line and a data line disposed on the first substrate, a first thin film transistor (“tft”) and a second tft connected to the gate line and the data line, a first subpixel electrode connected to the first tft, a first resistor connected to the second tft, and a second subpixel electrode connected to the first resistor.. .
Samsung Display Co., Ltd.


08/18/16
20160240159 

Shift register and display device


A shift register includes a plurality of unit circuits connected in cascade, each of the unit circuits including: a first output transistor having a current path connected between an output terminal and a clock terminal, the clock terminal being configured to be supplied with a first clock signal; a second output transistor having a current path connected between the output terminal and a predetermined potential node; a setting unit configured to set a signal level of the output terminal to a predetermined signal level in a case where a control signal is active; a first output controller configured to turn off the first output transistor in response to the control signal in the case where the control signal is active, supply a control electrode of the first output transistor with an input signal in response to one of a second clock signal in a case where the control signal is inactive; and a second output controller configured to turn off the second output transistor in the case where the control signal is active.. .
Sharp Kabushiki Kaisha


08/18/16
20160240158 

Goa unit for co-driving gate and common electrodes, drive circuit and array


The present disclosure discloses a goa unit for co-driving a gate electrode and a common electrode, including: a trigger; a first selective input circuit; a second selective input circuit which is used to respectively gate the high level input for common electrode and the high level input for gate electrode to the clock end of the trigger in different time sequences to pull up the voltage on the trigger output end; a third selective input circuit which is used to select level signals or edge signals on gate line n+1 and gate line n+4 to serve as the reset signal of the trigger; a fourth selective input circuit which is used to pull down the voltage thereon; a selective output circuit with the input being connected to the trigger output end, for selectively outputting a gate electrode driving signal or a common electrode driving signal.. .
Shenzhen China Star Optoelectronics Technology Co., Ltd.


08/18/16
20160240136 

Pixel driving circuit and pixel driving organic light-emitting diode


The present invention provides a pixel driving circuit and a pixel driving method of an organic light emitting diode, the pixel driving circuit comprises: a first transistor (t1), a second transistor (t2), a third transistor (t3), a fourth transistor (t4), a fifth transistor (t5), a sixth transistor (t6), a storage capacitor (c1) and an organic light-emitting diode (oled); which also comprises a scanning control terminal (scan), a data signal terminal (data), a constant current source (iref), a control light emitting signal terminal (em), a power supply voltage (vdd) and a power supply negative electrode (vss); the first transistor (t1) is a driving transistor. The present invention uses 6t1c compensation circuit to compensate the threshold voltage of the driving transistor of each pixel, grabbing the threshold voltage through the constant current source, and the data writing and the threshold voltage (vth) grabbing are simultaneous, which effectively compensate the threshold voltage (vth) variation of the driving transistor, improving the display quality..
Shenzhen China Star Optoloelectronis Technology Co., Ltd.


08/18/16
20160240133 

Electro-optical unit, electro-optical device and operating an electro-optical device


An electro-unit (1) is provided comprising a photodiode (2), a light-emitting diode (3) and a programmable resistive memory element (4). The electro-optical unit further has first (12), second (13) and third (14) control terminals, wherein the photodiode (2) and the programmable resistive element (4) are coupled in series between the first (12) and third (14) control terminals and m wherein the light emitting diode (3) and the programmable resistive element (4) are coupled between the second (13) and third (14) control terminals.
Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno


08/18/16
20160240120 

Test circuit and display panel


The embodiments of the present invention disclose a test circuit and a display panel, the test circuit comprises a test circuit first terminal, a test circuit second terminal, a test signal line, a voltage signal line, a switching transistor and a first electrostatic discharge protection circuit; the test signal line transmits the test signal, one end is connected with the first terminal, the other end is respectively connected with the switching transistor and the common electrode; the switching transistor is connected with the signal line, according to the received voltage signal on or off to conduct or cut off the test signal with signal line; the first electrostatic discharge protection circuit is respectively connected with the test signal line and signal line. To implement the embodiments, providing a test circuit and a display panel which occupy small space, it is conducive to the narrow border display panel design..
Shenzhen China Star Optoelectronics Technology Co. ,ltd.




Electrode topics: Phosphoric Acid, Internal Combustion Engine, Carbon Atoms, Porous Carbon, Double Layer Capacitor, Graphene Oxide, Aqueous Solution, Lithium Ion, Exhaust Gas, Soot Sensor, Combustion, Calibration, Electronic Apparatus, Electrical Signal, Electric Conversion

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