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Electrode patents

      

This page is updated frequently with new Electrode-related patent applications.




new patent Component-mounted board, manufacturing component-mounted board and component-embedded board
A component-mounted board includes: a substrate; an electronic component disposed over the substrate; and a conductive via formed in the substrate to be in contact with a bottom surface and a side surface of an electrode of the electronic component in a state where the electronic component is disposed over the substrate.. .
Fujitsu Limited


new patent Electronic component and component-embedded substrate
An electronic component includes: a component body into which elements are built; and a metal plate electrode that is joined to the component body by conductive paste so as to be electrically coupled to the elements, wherein the metal plate electrode exceeds in size a surface of the component body onto which the conductive paste is deposited.. .
Fujitsu Limited


new patent Transparent pane having a heatable coating
A transparent pane having an electrically heatable coating and at least one coating-free zone that can be used, for example, as communication window, is presented. The electrically heatable coating is connected to two collecting electrodes, such that a supply voltage applied to the electrodes generates a heating current that flows via a heating field formed between the collecting electrodes, the heating field containing the coating-free zone whose zone-edge is formed, at least in sections, by the heatable coating.
Saint-gobain Glass France


new patent Electrical heating device and electrical heating method
An electrical heating device electrically heats a material to be heated by supplying an electric current flowing between a plurality of electrodes. The electrical heating device includes temperature detection means for detecting temperature information of a plurality of areas of the material to be heated, supplemental heating means for heating each of the plurality of areas of the material to be heated, and control means for controlling heating of the material to be heated.
Toyota Jidosha Kabushiki Kaisha


new patent Monolithic ceramic transducers with embedded electrodes
Transducers and processes of forming the transducers are described. The transducers are produced as a monolithic body of a ceramic material and electrodes embedded in and encased by the ceramic material, with the ceramic material and the electrodes being co-fired to produce the monolithic body.
Lockheed Martin Corporation


new patent Protection of a telephone line against overvoltages
A structure protects a slic telephone line interface against overvoltages lower than a negative threshold or higher than a positive threshold. The structure includes at least one thyristor connected between each conductor of the telephone line and a reference potential.
Stmicroelectronics (tours) Sas


new patent Frequency domain multiplex optical transmission
A transmitter comprises a complex mixer to generate a single i analog drive signal and a single q analog drive signal, and a single multi-dimensional optical modulator configured to modulate an optical carrier light using the single i analog drive signal and the single q analog drive signal to produce a modulated optical signal for transmission. Alternatively, a transmitter comprises a complex mixer to generate two i analog drive signals and two q analog drive signals, and a single multi-dimensional multiple-electrode optical modulator configured to modulate an optical carrier light using the analog drive signals to produce a modulated optical signal for transmission.
Ciena Corporation


new patent Acoustic wave filter, duplexer, and module
An acoustic wave filter includes: series resonators connected in series; and one or more parallel resonators connected in parallel, wherein at least two series resonators and a parallel resonator therebetween are divided into a first divided resonator, which includes a piezoelectric substance sandwiched between a pair of electrodes in a c-axis orientation direction, and a second divided resonator, which includes another piezoelectric substance sandwiched between another pair of electrodes so that the another pair of electrodes in the c-axis orientation direction has an electric potential opposite to that of the electrodes of the first divided resonator in the c-axis orientation direction, a first group including the first divided resonators and a second group including the second divided resonators are interconnected in parallel between two nodes, and the first divided resonators and the second divided resonators of the at least two series resonators are not electrically interconnected at the two nodes.. .
Taiyo Yuden Co., Ltd.


new patent Vibration-driven energy harvester
A vibration-driven energy harvester includes: a fixed electrode; a movable electrode that is disposed so as to face opposite the fixed electrode and is allowed to move relative to the fixed electrode; and an ionic liquid disposed between the fixed electrode and the movable electrode which face opposite each other, wherein: power is generated as an external vibration moves the movable electrode, causing a change in at least one of an area of an electrical double layer formed on two sides of an interface of the fixed electrode and the ionic liquid and an area of an electrical double layer formed on two sides of an interface of the movable electrode and the ionic liquid.. .
The University Of Tokyo


new patent Switched-capacitor dc-to-dc converters and methods of fabricating the same
A switched-capacitor dc-to-dc converter includes a logic cell and a capacitor cell vertically overlapping with the logic cell. The logic cell has a plurality of active elements disposed over a first substrate.
Sk Hynix Inc.


new patent

Power feeding unit, power receiving unit, and feed system

A power feeding unit includes: a power feeding electrode configured to be coupled through an electric field with a power receiving electrode of a power receiving unit; a power feeding section configured to feed the power receiving unit with power through the power feeding electrode; and a power feeding side communication section configured to communicate with the power receiving unit through the power feeding electrode.. .
Sony Corporation

new patent

Semiconductor device, battery monitoring device, and voltage detection battery cell

The present disclosure provides a semiconductor device including: plural first switches, each provided so as to correspond to one of plural battery cells connected in series, each first switch including one end connected to a corresponding battery cell and another end connected to one electrode of a corresponding charge storage section of plural charge storage sections, each of the charge storage sections being provided so as to correspond to one of the plural battery cells, and another electrode of each charge storage section being connected to a fixed potential; plural second switches, each provided so as to correspond to one of the plural first switches, each second switch including one end connected to the other end of the corresponding first switch; and processing section connected to each other end of the plural second switches, that processes voltages supplied via the second switches.. .
Lapis Semiconductor Co., Ltd.

new patent

Cable connection structure and cable arranging part

A cable arranging part of the present invention has a fixed shape and comprises a position determining portion, a plurality of cable through holes, and an opening. In a state in which the position determining portion is secured to a position reference portion, the cable arranging part is in a predetermined position on a substrate.
Japan Aviation Electronics Industry, Limited

new patent

Antenna and timepiece

An antenna-equipped cover glass for a wristwatch includes: a first insulating layer that includes a transparent insulator; a first electrode layer connected to a bottom surface of the first insulating layer, the first electrode layer having a first transparent electrode surrounded by an insulating pattern formed in a region therein; a second insulating layer connected to a bottom surface of the first electrode layer; and a second electrode layer connected to a bottom surface of the second insulating layer, the second electrode layer having a second transparent electrode surrounded by an insulating pattern formed in a region therein.. .
Casio Computer Co., Ltd.

new patent

Lithium ion battery and electronic device using same

A nonaqueous electrolytic solution lithium ion battery comprises a positive electrode terminal, a negative electrode terminal and a battery case, and an electrode body is contained within the battery case. The electrode body comprises a positive electrode collector, an electrode plate for positive electrodes, a negative electrode collector and an electrode plate for negative electrodes.
Kurita Water Industries Ltd.

new patent

Polymer battery cell and electronic device comprising same

Disclosed are a polymer battery cell capable of increasing cell capacity due to efficient use of space by efficiently placing a protection circuit device, and thus of effectively protecting the protection circuit device from an external environment, and an electronic device including the polymer battery cell. The polymer battery cell includes an electrode body including a positive plate, a negative plate, and a separator provided between the positive and negative plates, cell taps including a positive tap connected to and protruding from the positive plate, and a negative tap connected to and protruding from the negative plate, and a battery protection circuit module electrically connected to the cell taps.
Itm Semiconductor Co., Ltd.

new patent

Protective layers for electrochemical cells

Articles and methods including layers for protection of electrodes in electrochemical cells are provided. As described herein, a layer, such as a protective layer for an electrode, may comprise a plurality of particles (e.g., crystalline inorganic particles, amorphous inorganic particles).
Basf Se

new patent

Rechargeable battery

A rechargeable battery includes a terminal, a connector, and an insulator. The terminal protrudes from a cap plate and electrically connected to an electrode.
Samsung Sdi Co., Ltd.

new patent

Nonaqueous electrolyte secondary battery

Provided is a nonaqueous electrolyte secondary battery in which the structural change of a positive electrode active material is suppressed at high voltage and which can achieve high capacity and long life. The nonaqueous electrolyte secondary battery includes a positive electrode containing a positive electrode active material storing and releasing lithium ions, a negative electrode containing a negative electrode active material storing and releasing lithium ions, and a nonaqueous electrolyte.
Sanyo Electric Co., Ltd.

new patent

Nonaqueous electrolyte secondary battery and battery pack

A nonaqueous electrolyte solution secondary battery of the embodiment includes an exterior material, a nonaqueous electrolyte solution, a positive electrode, a negative electrode and a separator sandwiched between the positive electrode and the negative electrode. The nonaqueous electrolyte solution is charged in the exterior material.
Kabushiki Kaisha Toshiba

new patent

Flame-resistant electrolyte for rechargeable lithium secondary batteries and rechargeable lithium secondary battery including the same

The present disclosure provides a flame-resistant electrolyte for rechargeable lithium secondary batteries, and a rechargeable lithium secondary battery including the same. The flame-resistant electrolyte for rechargeable lithium secondary batteries can reduce volatility of an organic solvent, and inhibit flammability to improve stability of a battery when a flame-resistant solvent, which includes a fluorinated phosphazene-based phosphorus compound and a phosphite-based compound for forming protective films on surfaces of negative and positive electrodes, is mixed with a lithium salt and a carbonate-based solvent, and thus has good lifespan characteristics and high battery charge/discharge efficiency even under high-temperature and high-voltage environments, and also has improved battery performance since an electrode interface is stabilized to inhibit side reaction with an electrolyte..
Ulsan National Institute Of Science And Technology

new patent

Electrolyte and magnesium secondary battery

To provide an electrolyte and a magnesium secondary battery that can embody a magnesium secondary battery having room-temperature operability and satisfactory cyclability. An electrolyte 13 including an organic solvent, magnesium salt and cyclic acid anhydride is provided.
Saitama Prefecture

new patent

Asymmetric battery having a semi-solid cathode and high energy density anode

Embodiments described herein relate generally to devices, systems and methods of producing high energy density batteries having a semi-solid cathode that is thicker than the anode. An electrochemical cell can include a positive electrode current collector, a negative electrode current collector and an ion-permeable membrane disposed between the positive electrode current collector and the negative electrode current collector.
24m Technologies, Inc.

new patent

Nonaqueous electrolyte battery and battery pack

According to one embodiment, a nonaqueous electrolyte battery includes a negative electrode, a positive electrode, and a nonaqueous electrolyte. When the nonaqueous electrolyte battery is discharged at a constant current of 0.5 c until a voltage becomes 1.5 v, a curve obtained by taking dq/dv during the discharge as a vertical axis and voltage as a horizontal axis has a first peak and a second peak.
Kabushiki Kaisha Toshiba

new patent

Rechargeable battery and rechargeable battery module using the same

A rechargeable battery includes an electrode assembly including a first electrode and a second electrode; a case receiving the electrode assembly; a cap plate coupled to the case and defining a terminal hole; a first electrode terminal at the cap plate; a second electrode terminal at the cap plate; a first current collecting tab electrically connecting the electrode assembly to the first electrode terminal; and a second current collecting tab electrically connecting the electrode assembly to the second electrode terminal, wherein at least one of the first electrode terminal or the second electrode terminal protrudes outside the cap plate as a rivet terminal.. .
Samsung Sdi Co., Ltd.

new patent

Polymer electrolyte membrane, catalyst coated membrane, membrane electrode assembly, and polymer electrolyte fuel cell

A polymer electrolyte composition is excellent in practicality which has such an excellent chemical stability as to be able to withstand a strong oxidizing atmosphere during operation of a fuel cell and is capable of achieving excellent proton conductivity under a low-humidified condition and excellent mechanical strength and physical durability as well as a polymer electrolyte membrane, a membrane electrode assembly, and a polymer electrolyte fuel cell which use the polymer electrolyte composition. The polymer electrolyte membrane is a polymer electrolyte membrane that contains at least an ionic group-containing polymer electrolyte and a polyazole, which is a polymer electrolyte membrane in which a phase separation of 2 nm or larger in which the polyazole is a main component is not observed in transmission type electron microscopic observation..
Toray Industries, Inc.

new patent

Resin frame equipped membrane electrode assembly for fuel cell

A resin frame equipped membrane electrode assembly includes an mea having different sizes of components and a resin frame member. A clearance is formed between an outer end of a second gas diffusion layer and an inner expansion.
Honda Motor Co., Ltd.

new patent

Nitrogen-containing carbon material and process for producing nitrogen-containing carbon material, and slurry, ink, and electrode for fuel cell

A nitrogen-containing carbon material containing a nitrogen atom, a carbon atom, and a metal element x, in which the atomic ratio (n/c) of the nitrogen atom to the carbon atom is 0.005 to 0.3, the content of the metal element x is 0.1 to 20% by mass, and the average particle diameter is 1 to 300 nm.. .
Asahi Kasei Kabushiki Kaisha

new patent

Membrane-electrodes assembly for proton exchange fuel cells (pemfc), and manufacturing method

A membrane-electrode assembly (mea) including a membrane and two electrodes, and further at least one layer located at the interface of the membrane and of an electrode. The layer contains a proton conductive polymer which has a glass transition temperature lower than or equal to, advantageously lower than, that of the proton conductive polymer contained in the membrane..
Commissariat A L'energie Atomique Et Aux Energies Alternatives

new patent

Method for manufacturing electrode sheet and electrode sheet

A method for manufacturing an electrode sheet includes the steps of forming a granulated material containing a plurality of granules; forming an electrode mixture layer by molding the granulated material into a sheet; and placing the electrode mixture layer on electrode current collector foil. The step of forming the granulated material includes the steps of forming a granule containing at least an electrode active material and a binder; and adhering a polyglycerol fatty acid ester to a surface of the granule..
Toyota Jidosha Kabushiki Kaisha

new patent

Binder for power storage device electrode

The present invention aims to provide a binder for an electrode of a power storage device which is excellent in dispersibility of an active material and adhesion, capable of improving the electrode density of an electrode to be obtained, provided with high resistance against an electrolyte, and capable of producing a high-capacity lithium secondary battery even when the amount thereof is small. The present invention also aims to provide a composition for an electrode of a power storage device, an electrode of a power storage device, and a power storage device each produced using the binder for an electrode of a power storage device.
Sekisui Chemical Co., Ltd.

new patent

Method for manufacturing electrode sheet

A method for manufacturing an electrode sheet includes the steps of forming a granulated material by mixing an electrode active material, a cellulose derivative, a binder, and an aqueous solvent, and placing the granulated material in the form of a sheet on electrode current collector foil. The cellulose derivative is at least one selected from the group consisting of hydroxyethyl cellulose, hydroxypropyl cellulose, hydroxyethyl methylcellulose, and hydroxypropyl methylcellulose, and has 3.0 or more moles of substitution, which is an average number of hydroxy groups substituted per glucose unit..
Toyota Jidosha Kabushiki Kaisha

new patent

Electrochemical cell with melanin electrode

An electrochemical cell includes an anode configured to produce multivalent cations during a discharge process, and a cathode comprising a catechol-bearing melanin. The cathode is configured to reversibly oxidize a catechol of the catechol-bearing melanin into a quinone by an extraction of the multivalent cation during a recharge process and reduce the quinone to the catechol by an insertion of the multivalent cation during the discharge process.
Carnegie Mellon University

new patent

Negative electrode material for non-aqueous electrolyte secondary battery, negative electrode mixture for non-aqueous electrolyte secondary battery, negative electrode for non-aqueous electrolyte secondary battery, non-aqueous electrolyte secondary battery, and vehicle

The negative electrode material for a non-aqueous electrolyte secondary battery of the present invention comprises, as an active material, a carbon material mixture including a non-graphitic carbon material and a graphitic material. In this carbon material mixture, the non-graphitic carbon material has an atom ratio (h/c) of hydrogen atoms to carbon atoms determined by elemental analysis of 0.10 or less, and an average particle size (dv50) of from 1 to 8 μm; and the graphitic material has a true density (ρbt) determined by a pycnometer method using butanol of 2.15 g/cm3 or greater.

new patent

Positive electrode active material and lithium secondary battery including the same

Disclosed herein are a positive electrode active material including at least one selected from among compounds represented by formula 1 below and a lithium secondary battery including the same that is capable of improving lifetime characteristics and rate characteristics while exhibiting excellent safety: xli2mymn(1-y)o3-zaz*(1−x)lim′o2-z′a′z′ (1), where m is at least one element selected from a group consisting of ru, mo, nb, te, re, ir, pt, cr, s, w, os, and po, m′ is at least one element selected from a group consisting of ni, ti, co, al, mn, fe, mg, b, cr, zr, zn, and second row transition metals, a and a′ are each independently a negative monovalent or divalent anion, and 0<x<1, 0.3<y<1, 0≦z<0.5, and 0≦z′<0.5.. .
Research Affairs Of Snu & Snu R&db Foundation

new patent

Positive electrode active material for nonaqueous electrolyte secondary battery and positive electrode for nonaqueous electrolyte secondary battery

Dissolution of cobalt from a positive electrode active material is suppressed. Disclosed is a positive electrode active material for a nonaqueous electrolyte secondary battery that contains a lithium transition metal oxide.
Sanyo Electric Co., Ltd.

new patent

Positive electrode material, positive electrode for nonaqueous-electrolyte secondary battery, and nonaqueous-electrolyte secondary battery

A positive electrode material includes li2niαm1ηm2βo4-γ, where 0<(α+η)≦2; 0≦η<0.5; 0<β≦2; 0≦γ≦1; 1≦(α+η+β)≦2.1; 0.8<β/(α+η); m1 is mn; m2 is at least one selected from ge and sn; and ni and m1 has a local structure of six-coordination. The positive electrode material is used for a positive electrode for nonaqueous-electrolyte secondary battery and a nonaqueous-electrolyte secondary battery..
Denso Corporation

new patent

Method for manufacturing a positive electrode sheet for a lithium ion secondary battery and a positive electrode sheet for a lithium ion secondary battery

Where α is an additive amount of the first binder in pts. Wt.

new patent

Bcc metal hydride alloys for electrochemical applications

Bcc metal hydride alloys historically have limited electrochemical capabilities. Provided are a new examples of these alloys useful as electrode active materials.
Ovonic Battery Company, Inc.

new patent

Stable lithium fluoride-based cathodes for metal and metal-ion batteries

A battery electrode composition is provided that comprises composite particles. Each composite particle may comprise, for example, active lithium fluoride/metal nanocomposite material optionally embedded into a nanoporous, electrically-conductive skeleton matrix material particle(s), where each of these composite particles is further encased in a li-ion permeable, chemically and mechanically robust, protective outer shell that is impermeable to electrolyte solvent molecules.
Sila Nanotechnologies Inc.

new patent

Electrode structure, fabricating the same, and lithium battery

An electrode structure is provided. The electrode structure includes a substrate, a buffer layer, and a nano-material layer.
National Taiwan University Of Science And Technology

new patent

Composite anode of lithium-ion batteries

The present invention provides a composite anode for a battery comprising a copper current collector working electrode, at least one anode material comprising at least one of a carbon, a silicon, a conductive agent, and combinations thereof, wherein at least one anode material is deposited on a surface of the copper current collector working electrode to form the composite anode for a battery. An electrophoretic method for making this anode is provided.
West Virginia University

new patent

Positive electrode active material layer including first positive electrode active material and second positive electrode active material, and producing positive electrode including said positive electrode active material layer

A parameter for producing a positive electrode having excellent safety, and a positive electrode active material layer satisfying the parameter. The positive electrode active material layer includes a first positive electrode active material, a second positive electrode active material having a lower charge/discharge potential than the first positive electrode active material, and an additive.
Kabushiki Kaisha Toyota Jidoshokki

new patent

Negative electrode material for secondary battery and secondary battery using the same

A negative electrode active material is provided, which can reduce and suppress ratio of expansion of silicon, provide enhanced conductivity, and realize superior charge/discharge cycle characteristic. The negative electrode material for secondary battery capable of occluding and releasing lithium consists of alloy particles having a silicon phase and a metal phase, and a carbonaceous material, in which crystallite size of the silicon phase is 10 nm or less, and the metal phase includes two or more kinds of metals alloying with silicon but not with lithium, and the carbonaceous material has crystallite size of 30 nm or more, and the carbonaceous material is present on the surface of, or within the alloy particles..
Lg Chem, Ltd.

new patent

Nonaqueous electrolyte secondary battery and manufacturing the same

A method of manufacturing a nonaqueous electrolyte secondary battery includes a positive electrode paste preparation step, a positive electrode sheet preparation step, a construction step, and an initial charging step. In the positive electrode paste preparation step, a positive electrode paste is prepared by dispersing a positive electrode active material, a binder, and a metal phosphate in a solvent.
Toyota Jidosha Kabushiki Kaisha

new patent

Electrode, storage battery, power storage device, and electronic device

A power storage device with high capacity is provided. A power storage device with high energy density is provided.
Semiconductor Energy Laboratory Co., Ltd.

new patent

Active cathode material for secondary lithium cells and batteries

A cathode material, and a method of producing same, includes particles made of lithium metal oxide having a coating, wherein the coating consists of a solid lithium ion conductor having a granite-like crystal structure and has been deposited onto the lithium metal oxide by a physical process. The cathode material is used in an electrode and in an electrochemical apparatus..
Bayerische Motoren Werke Aktiengesellschaft

new patent

Rechargeable secondary battery

A rechargeable secondary battery includes: a case; an electrode assembly in the case; and a cap plate coupled to the case and protecting the electrode assembly, wherein the cap plate comprises a fuse part electrically connected to the electrode assembly.. .
Samsung Sdi Co., Ltd.

new patent

Secondary battery

Provided is a secondary battery which is capable of more reliably cutting off current by increasing a deformation amount of a member, which is deformed by a rise of an internal pressure of a battery container and cuts off current. The secondary battery is provided with a current cut-off mechanism in a current path between an external terminal and an electrode inside a battery container.
Hitachi Automotive Systems, Ltd.

new patent

Secondary battery

A secondary battery includes: an electrode assembly, a case accommodating the electrode assembly, a cap plate sealing the case and including an inversion plate, an insulation plate including a short-circuit hole corresponding to the inversion plate and a first air hole spaced apart from the short-circuit hole and formed along a top surface of the cap plate, the insulation plate being coupled to the top surface of the cap plate, and a terminal plate coupled to a top surface of the insulation plate and electrically coupled to the electrode assembly. The first air hole is a hole coupling from a top portion of the inversion plate to the outside of the insulation plate..
Samsung Sdi Co., Ltd.

new patent

Secondary battery

A secondary battery includes: an electrode assembly; a case accommodating the electrode assembly; an electrode tab extending from the electrode assembly; a sealing part for insulating the electrode tab from the case; and an insulation film around the electrode tab and between the sealing part and the electrode assembly.. .
Samsung Sdi Co., Ltd.

new patent

Electric accumulation device

Immobilization tapes include first immobilization tapes disposed across an electrode assembly upper edge, second immobilization tapes disposed across the electrode assembly lower edge, and third immobilization tapes disposed across the electrode assembly side edges. The first immobilization tapes are disposed on the outer sides of two protrusion positions from a positive electrode tab and a negative electrode tab within the electrode assembly upper edge.
Kabushiki Kaisha Toyota Jidoshokki

new patent

Method of manufacturing secondary battery

A method of manufacturing a secondary battery includes: ultrasonic-welding a first electrode plate of an electrode assembly and a first electrode tab to each other by using a first horn including a first protruding tip; ultrasonic-welding a second electrode plate of the electrode assembly and a second electrode tab to each other by using a second horn including a second protruding tip, the second protruding tip having a positioning direction different from a positioning direction of the first protruding tip; and preparing the electrode assembly by arranging a separator between the first and second electrode plates.. .
Samsung Sdi Co., Ltd.

new patent

Organic light emitting device

Provided is an organic light emitting device, including: a plurality of pixels arranged on a substrate in at least one row along a longitudinal direction of the substrate, each of the plurality of pixels including a light emitting element part including, from the substrate side, a first electrode, an organic compound layer, and a second electrode in the stated order; and a sealing layer formed on the light emitting element part, the sealing layer covering an end of an inorganic material layer formed on a surface of the substrate or above the substrate, and formed below the organic compound layer, the sealing layer having an end formed on an inner side with respect to an end of the substrate at least in a transverse direction of the substrate.. .
Canon Kabushiki Kaisha

new patent

Organic light-emitting element

An organic light-emitting element, including a substrate, a first electrode, a light-emitting layer containing one organic or more layer film, and a light-emitting element of a second electrode are disclosed. The light-emitting element is provided with a covering layer.
Toray Industries, Inc.

new patent

Organic optoelectronic device and manufacturing an organic optoelectronic device

In at least one embodiment, an organic optoelectronic component, which is preferably an organic light emitting diode, includes a first electrode layer, a second electrode layer and an organic layer sequence situated between the electrode layers. Furthermore, the component includes a light-transmissive current confinement layer, which is fitted over the whole area between the first electrode layer and the organic layer sequence, such that the organic layer sequence is spaced apart from the first electrode layer.
Osram Oled Gmbh

new patent

Organic light emitting diode and manufacturing method thereof, display apparatus

An organic light emitting diode, which includes a substrate, a first electrode, at least one of red and green emissive layers, a blue emissive layer, a second electrode, and an exciplex elimination layer that is formed between at least one of the red and green emissive layers and the blue emissive layer; the exciplex elimination layer acts to confine carriers in at least one of the red and green emissive layers.. .
Boe Technology Group Co., Ltd.

new patent

Electronic device and manufacturing method thereof

A electronic device includes: a control electrode 11 formed on a base substrate 10; an insulation layer 21 adapted to cover the control electrode 11 and formed of an organic insulation material; an active layer 12 formed on the insulation layer 21, formed of an organic semiconductor material, and subjected to patterning; and a first electrode 13a and a second electrode 13b formed on the active layer 12, in which a chemical composition of a surface of a region a (21a) that is a region of the insulation layer 21 not formed with the active layer 12 differs from a chemical composition of a region b (21b) that is a region of the insulation layer 21 located under the active layer 12.. .
Sony Corporation

new patent

Organic light emitting diode for high efficiency

Disclosed herein is an organic light-emitting diode, comprising: a first electrode, a second electrode opposite the first electrode, and a light-emitting layer and an electron-density-controlling layer in that order between the first electrode and the second electrode, wherein the electron-density-controlling layer includes at least one selected from among compounds represented by chemical formulas a to d, and the light-emitting layer includes at least one anthracene compound represented by chemical formula h. The electron-density-controlling layer may be disposed between the light-emitting layer and an electron transport layer..
Sfc Co., Ltd.

new patent

Spiro compound having azafluorene ring structure, light-emitting material, and organic electroluminescent device

A compound that emits fluorescence and delayed fluorescence is provided as a material for an organic electroluminescent device of high efficiency, and an organic photoluminescent device and an organic electroluminescent device of high efficiency and high luminance are provided using this compound. The spiro compound of a general formula (1) having an azafluorene ring structure is used as a constituent material of at least one organic layer in an organic electroluminescent device that includes a pair of electrodes, and one or more organic layers sandwiched between the pair of electrodes..
Kyushu University, National University Corporation

new patent

An electrode and manufacturing method thereof, an array substrate and manufacturing method thereof

The present invention provides an electrode and manufacturing method thereof, and an array substrate and manufacturing method thereof. The manufacturing method of the electrode comprises: forming a znon material layer on a metal electrode layer; etching the formed znon material layer to form a microlens structure layer; forming a transparent electrode layer on the microlens structure layer.
Boe Technology Group Co., Ltd.

new patent

Light-emitting device and manufacturing the same

The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel..
Semiconductor Energy Laboratory Co., Ltd.

new patent

Memory device and manufacturing the same

The invention provides a memory device and a manufacturing method thereof. The memory device includes a substrate, a capacitor, a protection device, a first metal interconnect, and a second metal interconnect.
Winbond Electronics Corp.

new patent

Magnetic tunnel junctions

Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having a conductive first magnetic electrode which contains magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and which contains magnetic reference material, and a non-magnetic insulator material between the first and second electrodes.
Micron Technology, Inc.

new patent

Manufacturing techniques and corresponding devices for magnetic tunnel junction devices

Some embodiments relate to a magnetoresistive random-access memory (mram) cell. The cell includes a bottom electrode having a central bottom electrode portion surrounded by a peripheral bottom electrode portion.
Taiwan Semiconductor Manufacturing Co., Ltd.

new patent

Light emitting element and light emitting device

Provided are a light emitting element and a light emitting device with improved light emission intensity distribution. A light emitting element includes a light-transmissive substrate, an n-type semiconductor layer, a first p-type semiconductor layer, a first p-side electrode, a first n-side electrode, a second p-type semiconductor layer, a second p-side electrode, and a second n-side electrode.
Nichia Corporation

new patent

Method of manufacturing light-emitting diode

A method of manufacturing a light-emitting diode (led) includes preparing a substrate, forming a plurality of semiconductor light-emitting units on the substrate, each of the plurality of semiconductor light-emitting units protruding from the substrate and including a first conductive semiconductor layer, and an active layer and a second conductive semiconductor layer, the active layer and the second conductive semiconductor layer sequentially covering the first conductive semiconductor layer, dipping the semiconductor light-emitting units into an aqueous solution containing metal salt and an alkaline ligand compound, and forming an electrode layer on the plurality of semiconductor light-emitting units, wherein the forming the electrode layer includes maintaining a temperature of the aqueous solution between about 40° c. And about 200° c..
Samsung Electronics Co., Ltd.

new patent

Light-emitting element

A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.. .
Epistar Corporation

new patent

Composite substrate for light emitting device and led module with the same

The invention relates to a composite substrate for light emitting device and a led module equipped with the composite substrate for light emitting device. The composite substrate for light emitting device includes a metal substrate, an insulating carrier and an electrode, the metal substrate and the insulating carrier respectively have a front side and a back side that are opposite, the insulating carrier is disposed on the periphery of the metal substrate and connected to the metal substrate, the electrode is disposed on the insulating carrier, the electrode penetrates the insulating carrier, the electrode has a front side and a back side that are opposite, the heights of the back sides of the insulating carrier and the electrode are less than that of the back side of the metal substrate.
Kaistar Lighting (xiamen) Co., Ltd.

new patent

Light emitting diode and data transmission and reception apparatus

A light emitting diode, including a semiconductor epitaxial structure, a first electrode and a second electrode is provided. The semiconductor epitaxial structure includes a plurality stacked light-emitting layers, and each of the light-emitting layers respectively emits different range of wavelength of light.
Southern Taiwan University Of Science And Technology

new patent

Method for manufacturing a photovoltaic cell with selective doping

A method for creating a photovoltaic cell, includes forming a first doped region in a semiconductor substrate having a first concentration of doping elements; forming, by ion implantation, alignment units, the largest size of which is smaller than one millimeter, and a second doped region, adjacent to the first region with a second concentration of doping elements; heat-treating the substrate to activate the doping elements and to form an oxide layer at the surface of the substrate, the second concentration and the heat treatment conditions being selected such that the oxide layer has a thickness above the alignment units that is larger, by at least 10 nm, than the thickness of the oxide layer above an area of the substrate adjacent to the alignment units; depositing an antireflection layer onto the oxide layer; and depositing an electrode onto the antireflection coating, through a screen, opposite the second region.. .
Commissariat A L'energie Atomique Et Aux Energies Alternatives

new patent

Uranium oxide solar cells

Solar cells including thin film depleted uranium oxide (duo) may be produced using an ion beam assisted deposition (ibad) process, for example. P-type duo film and n-type duo film may form a p/n junction.
Los Alamos National Security, Llc

new patent

Solar cell and solar cell module

A solar cell and a solar cell module are disclosed. The solar cell includes a semiconductor substrate, an emitter region extending in a first direction, a back surface field region extending in the first direction in parallel with the emitter region, a first electrode connected to the emitter region and extending in the first direction, and a second electrode connected to the back surface field region and extending in the first direction.
Lg Electronics Inc.

new patent

Solar cell and manufacturing the same, and solar cell module

A solar cell module includes a plurality of solar cells comprising a first solar cell and a second solar cell adjacent to each other; a conductive ribbon, wherein each of the plurality of solar cells comprises: a substrate; an emitter layer of positioned on the substrate; a plurality of finger electrodes formed in a first direction, each finger electrode being electrically connected to the emitter layer; and at least one first collector formed in a second direction crossing the first direction, the at least one first collector being electrically connected to the plurality of finger electrodes, wherein the conductive ribbon is attached to the at least one first collector in the second direction by a conductive adhesive, and wherein the conductive ribbon is attached on a collector region where the at least one first collector is formed and a deletion where the at least one first collector is not formed.. .
Lg Electronics Inc.

new patent

Solar cell and manufacturing the same

A solar cell includes a substrate; a first passivation layer on a first surface of the substrate; a first field region on the first surface of the substrate; an anti-reflection layer on the first passivation layer; a second passivation layer on a second surface of the substrate; an emitter region on the second passivation layer, the emitter region forming a p-n junction and a hetero-junction junction with the substrate; a second field region on the second passivation layer, the second field region forming a hetero-junction with the substrate; a first electrode contacted to the emitter region; a second electrode contacted to the second field region; a spacing between the emitter region and the second field region; and a third passivation layer on the second surface of the substrate at the spacing.. .
Lg Electronics Inc.

new patent

Method of manufacturing a circuit board by punching

A method of manufacturing a circuit board includes: forming a plurality of metal electrodes so as to be separated from each other on a holding sheet by cutting a metal foil held on the holding sheet to remove a portion of the metal foil; forming adhesive layers on surfaces of the plurality of metal electrodes; adhering the adhesive layers to a base material by closely contacting the adhesive layers with the base material; and transcribing the adhesive layers and the plurality of metal electrodes onto the base material by detaching the holding sheet from the plurality of metal electrodes.. .
Dsm Ip Assets B.v.

new patent

Semiconductor device

For enhancing a reverse-recovery immunity of a diode element, a semiconductor device includes a first conductivity-type drift layer, a second conductivity-type anode region provided in an upper portion of the drift layer, an insulating film provided on the drift layer, an anode electrode having an ohmic contact portion ohmically contacted to the anode region through a contact hole penetrating the insulating film, and a schottky electrode schottky-contacted to a peripheral portion of the anode region.. .
Fuji Electric Co., Ltd.

new patent

P-si tft and fabricating the same, array substrate and fabricating the same, and display device

A method for fabricating a polysilicon thin-film transistor is provided. The method includes forming a polysilicon active layer, forming a first gate insulation layer and a first gate electrode sequentially on the active layer, conducting a first ion implantation process on the active layer by using the first gate electrode as a mask to form two doped regions at ends of the active layer, forming a second gate insulation layer and a second gate electrode sequentially on the first gate insulation layer and the first gate electrode, and conducting a second ion implantation process on the active layer by using the second gate electrode as another mask to form two source/drain implantation regions at two outer sides of the doped regions of the active layer.
Boe Technology Group Co., Ltd.

new patent

Field-effect transistor, display element, image display device, and system

A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer formed between the substrate and the passivation layer; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed at least between the source electrode and the drain electrode and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first complex oxide containing an alkaline earth metal and a rare-earth element, and wherein the gate insulating layer contains a second complex oxide containing an alkaline earth metal and a rare-earth element.. .
Ricoh Company, Ltd.

new patent

Semiconductor device, manufacturing the same, and electronic device

A semiconductor device with reduced parasitic capacitance is provided. A stack is formed on an insulating layer, the stack comprising a first oxide insulating layer, an oxide semiconductor layer over the first oxide insulating layer, and a second oxide insulating layer on the oxide semiconductor layer; a gate electrode layer and a gate insulating layer are formed on the second oxide insulating layer; a first low-resistance region is formed by adding a first ion to the second oxide semiconductor layer using the gate electrode layer as a mask; a sidewall insulating layer is formed on an outer side of the gate electrode layer; a second conductive layer is formed over the gate electrode layer, the sidewall insulating layer, and the second insulating layer; and an alloyed region in the second oxide semiconductor layer is formed by performing heat treatment..
Semiconductor Energy Laboratory Co., Ltd.

new patent

Semiconductor device and manufacturing same

A semiconductor device includes a thin film transistor (100), the thin film transistor (100) including: a substrate (1); a gate electrode (3) provided on the substrate (1); a gate dielectric layer (5) formed on the gate electrode (3); an island-shaped oxide semiconductor layer (7) formed on the gate dielectric layer (5); a protective layer (9) provided so as to cover an upper face (7u) and an entire side face (7e) of the oxide semiconductor layer (7), the protective layer (9) having a single opening (9p) through which the upper face (7u) of the oxide semiconductor layer (7) is only partially exposed; and a source electrode (11) and a drain electrode (13) which are in contact with the oxide semiconductor layer (7) within the single opening (9p).. .
Sharp Kabushiki Kaisha

new patent

Semiconductor device

A semiconductor device includes a first conductivity type region provided to at least one of a second conductivity type column region and a second conductivity type layer located on the second conductivity type column region. The first conductivity type region has a non-depletion layer region when a voltage between a first electrode and a second electrode is 0v.
Denso Corporation

new patent

Semiconductor device with multiple carrier channels

A semiconductor device includes a layered structure forming multiple carrier channels including at least one n-type channel formed in a first layer made of a first material and at least one p-type channel formed in a second layer made of a second material and a set of electrodes for providing and controlling carrier charge in the carrier channels. The first material is different than the second material, and the first and the second materials are selected such that the n-type channel and the p-type channel have comparable switching frequency and current capability..
Mitsubishi Electric Research Laboratories, Inc.

new patent

Semiconductor device with multiple-functional barrier layer

A semiconductor device includes a semiconductor structure forming a carrier channel, a barrier layer arranged in proximity with the semiconductor structure, and a set of electrodes for providing and controlling carrier charge in the carrier channel. The barrier layer is at least partially doped by impurities having a conductivity type opposite to a conductivity type of the carrier channel.
Mitsubishi Electric Research Laboratories, Inc.

new patent

Semiconductor device and manufacturing the same

A semiconductor device includes: a drift layer of a first conductivity type, implementing a main semiconductor layer; a base region of a second conductivity type provided on an top surface side of the drift layer; a first main electrode region of the first conductivity type provided in an upper part of the base region, having an impurity concentration higher than the main semiconductor layer; a gate electrode buried in a trench penetrating the first main electrode region and the base region through a gate insulating film; a gate screening semiconductor layer of the second conductivity type, being buried under a bottom of the trench; an intermediate semiconductor layer of the first conductivity type sandwiched between the base region and the gate screening semiconductor layer; and a second main electrode region of the second conductivity type provided on a bottom surface side of the drift layer.. .
Fuji Electric Co., Ltd.

new patent

Semiconductor device

An improvement is achieved in the reliability of a semiconductor device having an igbt. In an active cell region, in a portion of a semiconductor substrate which is interposed between first and second trenches in which first and second trench gate electrodes are embedded, an n+-type emitter region, a p-type body region located thereunder, and a first n-type hole barrier region located thereunder are formed.
Renesas Electronics Corporation

new patent

Desaturable semiconductor device with transistor cells and auxiliary cells

A semiconductor device includes transistor cells that connect a first load electrode with a drift structure forming first pn junctions with body zones when a gate voltage applied to a gate electrode exceeds a first threshold voltage. First auxiliary cells in a vertical projection of and electrically connected with the first load electrode are configured to inject charge carriers into the drift structure at least in a forward biased mode of the first pn junctions.
Infineon Technologies Ag

new patent

Semiconductor device, manufacturing semiconductor device, and forming oxide film

One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween. The oxide semiconductor film has a spin density lower than 9.3×1016 spins/cm3 and a carrier density lower than 1×1015/cm3.
Semiconductor Energy Laboratory Co., Ltd.

new patent

Semiconductor device

A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film.
Semiconductor Energy Laboratory Co., Ltd.

new patent

Transistor including topological insulator

Disclosed is a transistor including a topological insulator. The transistor includes: a substrate; a topological insulator provided on the substrate; a drain electrode provided on the topological insulator; a source electrode separated from the drain electrode, provided on the topological insulator, and including a ferromagnetic substance; a tunnel junction layer provided on the source electrode; and a gate electrode provided on the tunnel junction layer.
Korea Institute Of Science And Technology

new patent

Semiconductor device and fabricating the same

The semiconductor device includes a first wire pattern formed on a substrate and spaced apart from the substrate, the first wire pattern extending in a first direction. A gate electrode surrounds a circumference of the first wire pattern and extends in a second direction.
Samsung Electronics Co., Ltd.

new patent

Semiconductor device and manufacturing semiconductor device

A semiconductor device includes an n-type silicon carbide substrate, an n-type silicon carbide layer formed on the n-type silicon carbide substrate, a p-type region selectively formed in a surface layer of the n-type silicon carbide layer, an n-type source region formed in the p-type region, a p contact region formed in the p-type region, a gate insulating film formed on a portion of a region from the n-type source region, through the p-type region, to the n-type silicon carbide layer, a gate electrode formed on the gate insulating film, an interlayer insulating film covering the gate electrode, and a first source electrode electrically connected to a surface of the p contact region and the n-type source region. An end of the interlayer insulating film covering the gate electrode has a slope of a predetermined angle..
Fuji Electric Co., Ltd.

new patent

Split-gate devices

A semiconductor device includes a substrate having a source region and a drain region implanted with a second dopant by a second ion implantation. The substrate includes a first well region implanted with a first dopant by a first ion implantation and a second well region blocked from the first ion implantation forming a native section.
Broadcom Corporation

new patent

Semiconductor device and manufacturing the same

A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the soi substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed.

new patent

Semiconductor device having a fin

Provided is a semiconductor device. The semiconductor device includes a fin disposed on a substrate along a first direction.
Samsung Electronics Co., Ltd.

new patent

Organic light emitting device

An organic light emitting display device including: a plurality of pixel electrodes disposed on a substrate; pixel defining layers provided on the plurality of pixel electrodes, and including a plurality of openings respectively exposing the pixel electrodes; and a plurality of organic emission layers respectively formed on the plurality of pixel electrodes. The pixel defining layer includes a resin, and light transmittance of the resin is in a range of about 15% to about 50% with respect to light of a wavelength range of about 380 nm to about 780 nm..
Samsung Display Co., Ltd.

new patent

Image pickup device and manufacturing the same

An image pickup device capable of completely transmit charges generated at a photodiode to a floating diffusion region is provided. In a pixel region, a plurality of fin-like structures are so formed as to loin a photodiode formation region with the floating diffusion region.
Renesas Electronics Corporation

new patent

Apparatus for radiation detection in a digital imaging system

The disclosure is directed at a method and apparatus for producing a detector element. The detector element includes first and second electrodes located on opposites sides of a semiconductor layer.

new patent

Method for manufacturing array substrate and array substrate manufactured therefor

A method for manufacturing an array substrate is disclosed and includes steps of: sequentially forming a first metal layer, an insulating layer and a second metal layer on a glass substrate; forming a passivation layer on the second metal layer; performing a first etching process on the passivation layer to obtain a first groove and a second groove; performing a second etching process on the passivation layer to obtain a third groove; and forming a pixel electrode layer on the passivation layer. The method saves one photomask and a photolithography step, thereby reducing the cost and improving the efficiency..
Shenzhen China Star Optoelectronics Technology Co. Ltd.

new patent

Manufacturing tft substrate structure

The present invention provides a manufacturing method of a tft substrate structure, which includes sequentially forming a first passivation layer, a planarization layer, and a first transparent conductive film and then first subjecting the first transparent conductive film to patterning to form a first pixel electrode and thereafter, a photolithographic process is applied to the planarization layer for exposure and thus forming a first via located above and corresponding to a drain terminal, followed by using the planarization layer as a self-aligning mask to apply dry etching to the first passivation layer for etching to form a second via that corresponds to the first via, whereby residues of the first transparent conductive film in the first and second vias can be effectively prevented and product yield is enhanced. Further, on mask can be saved to prevent reduction of aperture ratio caused by misalignment thereby improving the production efficiency, reducing production cost, and increasing cost-related competition power of products..
Shenzhen China Star Optoelectronics Technology Co. Ltd.

new patent

Semiconductor device

A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, and a pixel electrode electrically connected to the transistor.
Semiconductor Energy Laboratory Co., Ltd.

new patent

Display device and manufacturing the same

A display device capable of reducing the number of manufacturing processes and manufacturing costs and a method of manufacturing the display device are provided, the display device including: a first substrate; a gate transmission member and a pixel electrode on the first substrate; a gate insulating layer on the gate transmission member and the pixel electrode; a semiconductor layer on the gate insulating layer, the semiconductor layer overlapping a gate electrode of the gate transmission member; and a source electrode and a drain electrode on the semiconductor layer, wherein the gate transmission member includes a first conductive layer pattern and a second conductive layer pattern on the first conductive layer pattern, the first conductive layer pattern including a material the same as a material forming the pixel electrode.. .
Samsung Display Co., Ltd.

new patent

Ultrahigh density vertical nand memory device and making thereof

Monolithic, three dimensional nand strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to the major surface of the substrate, the blocking dielectric comprising a plurality of blocking dielectric segments, a plurality of discrete charge storage segments, and a tunnel dielectric located between each one of the plurality of the discrete charge storage segments and the semiconductor channel.. .
Sandisk Technologies Llc

new patent

Semiconductor memory device and manufacturing the same

According to an embodiment, a semiconductor memory device includes a plurality of control gate electrodes, a semiconductor layer, and a charge accumulation layer. The plurality of control gate electrodes are provided as a stack above a substrate.
Kabushiki Kaisha Toshiba

new patent

Semiconductor memory device and manufacturing the same

According to an embodiment, a semiconductor memory device includes a plurality of control gate electrodes, a semiconductor layer, and a charge accumulation layer. The plurality of control gate electrodes are provided as a stack above a substrate.
Kabushiki Kaisha Toshiba

new patent

Semiconductor memory device and manufacturing the same

Manufactured in a method of manufacturing according to an embodiment is a semiconductor memory device including: control gate electrodes; a semiconductor layer; and a charge accumulation layer. In this method of manufacturing, inter-layer insulating layers and sacrifice layers are stacked alternately, an opening that penetrates the inter-layer insulating layers and sacrifice layers is formed, a first insulating layer, the charge accumulation layer, and the semiconductor layer are formed in the opening, the sacrifice layer and part of the first insulating layer are removed, and the control gate electrodes are formed.
Kabushiki Kaisha Toshiba

new patent

Semiconductor memory device and manufacturing the same

According to an embodiment, a semiconductor memory device comprises a plurality of control gate electrodes, a semiconductor layer, and a first insulating layer. The plurality of control gate electrodes are stacked above a substrate.
Kabushiki Kaisha Toshiba

new patent

Semiconductor memory device and manufacturing same

According to one embodiment, a semiconductor memory device includes a substrate, a stacked body provided on the substrate and including multiple electrode layers separately stacked with each other, a semiconductor film, a charge storage film provided between the semiconductor film and the multiple electrode layers, and a first insulating film provided between the semiconductor film and the charge storage film, extending in the stacking direction, and having a bottom surface contacting the substrate. The semiconductor film is provided integrally with the substrate in the stacked body, and extends in a stacking direction of the stacked body.
Kabushiki Kaisha Toshiba

new patent

Semiconductor memory device and manufacturing the same

According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode films and a plurality of insulating films, the plurality of electrode films and the plurality of insulating films being alternately stacked on each other, a semiconductor pillar extending in a stacking direction of the stacked body, and a charge storage film provided between the electrode films and the semiconductor pillar and extending linearly in the stacking direction of the stacked body. A stacking-direction width of an edge portion of the electrode films on side of the semiconductor pillar is shorter than a stacking-direction width of the electrode films other than the edge portion of the electrode films..
Kabushiki Kaisha Toshiba

new patent

Semiconductor device

An object is to provide a semiconductor device having a novel structure with a high degree of integration. A semiconductor device includes a semiconductor layer having a channel formation region, a source electrode and a drain electrode electrically connected to the channel formation region, a gate electrode overlapping with the channel formation region, and a gate insulating layer between the channel formation region and the gate electrode.
Semiconductor Energy Laboratory Co., Ltd.

new patent

Method for manufacturing a nonvolatile memory device

A method for manufacturing a nonvolatile memory device in accordance with an embodiment of the present invention may include providing a substrate comprising a cell region and a peripheral region, wherein the peripheral region comprises an nmos region and a pmos region; performing a well forming ion implantation over the substrate in the cell region and the nmos region; performing a threshold voltage adjusting ion implantation over a surface of the substrate in the cell region and the nmos region; forming a gate pattern comprising a floating gate electrode in the cell region and the peripheral region; and performing a junction ion implantation over a surface of the cell region, wherein the floating gate electrode may have p-type conductivity.. .
Sk Hynix Inc.

new patent

Semiconductor device

Provided is a semiconductor device having improved performance. Over a semiconductor substrate, a dummy control gate electrode is formed via a first insulating film.
Renesas Electronics Corporation

new patent

Semiconductor device including capacitor and manufacturing the same

A method for manufacturing a semiconductor device may include forming contact pads spaced apart from each other in a first direction on a substrate and between first insulating patterns; forming first holes between the first insulating patterns and having bottom ends adjacent top surfaces of the contact pads; forming second holes between second insulating patterns and overlapping with partial portions of the first holes in a second direction perpendicular to the first direction; and forming a bottom electrode layer including first portions to cover the bottom ends of the first holes and sidewalls of the second holes. In forming the first and second holes, the first and second holes are formed simultaneously..
Samsung Electronics Co., Ltd.

new patent

Transistor

A transistor includes: a semiconductor substrate; a plurality of gate electrodes, a plurality of source electrodes, and a plurality of drain electrodes on the semiconductor substrate; a drain pad on the semiconductor substrate and connected to the plurality of drain electrodes; a metal wiring on the semiconductor substrate and arranged spaced apart from, adjacent to and parallel to the drain pad; and a ground pad on the semiconductor substrate and connected to both ends of the metal wiring.. .
Mitsubishi Electric Corporation

new patent

Light emitting diode (led) package having short circuit (vled) die, lens support dam and same side electrodes and fabrication

A light emitting diode (led) package includes a main vled die; a short circuit vled die; a lens support dam; a transparent lens attached to the lens support dam; a first electrode in electrical communication with a first semiconductor layer of the main vled die and a second electrode in electrical communication with a second semiconductor layer of the main vled die.. .
Semileds Optoelectronics Co., Ltd.

new patent

Semiconductor device for electric power

Herein provided are: a ceramic board; a semiconductor element for electric power, on one surface of which an electrode is formed, and the other surface of which is bonded to the ceramic board; a lead terminal, one end side of which is bonded to the electrode, and the other end side of which is to be electrically connected to an outside thereof; and a sealing member by which the semiconductor element for electric power is sealed together with a part, in the lead terminal, bonded to the electrode; wherein, near an end in said one end side of the lead terminal, an inclined surface is formed which becomes farther from the circuit board as it becomes closer to the end.. .
Mitsubishi Electric Corporation

new patent

Interposer and circuit substrate

An interposer includes an insulating plate including insulating layers and having first, second, third and fourth surfaces such that the second surface is on the opposite side of the first surface, the third surface is perpendicular to the first surface, the fourth surface is on the opposite side of the third surface, and the insulating layers are laminated on the third surface, and conductor layers formed in the insulating plate such that each conductor layer is interposed between adjacent insulating layers and includes straight conductors having first electrodes exposed from the first surface and second electrodes exposed from the second surface, respectively. The insulating layers include second insulating layers each sandwiched by adjacent conductor layers such that each second insulating layer integrally has an inter-conductor-layer insulating layer portion formed between the adjacent conductor layers and inter-conductor insulating layer portions formed between adjacent straight conductors in a respective conductor layer..
Ibiden Co., Ltd.

new patent

Semiconductor package and manufacturing method thereof

A semiconductor package and a method of manufacturing a semiconductor package. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and method of manufacturing thereof, that comprises a substrate having a first surface and a second surface opposite to the first surface, and comprising at least one first recess portion formed in a direction ranging from the first surface toward the second surface, a plurality of first recess conductive patterns formed in the first recess portion, and a first passive element inserted into the first recess portion of the substrate and having a first electrode and a second electrode electrically connected to the plurality of first recess conductive patterns..
Amkor Technology, Inc.

new patent

Interposers, semiconductor devices, manufacturing interposers, and manufacturing semiconductor devices

An interposer which can better prevent detachment of a conductive layer pattern due to thermal expansion and thermal contraction. The interposer includes a substrate having a through hole; an insulative resin layer formed on a surface of the substrate and including a conductive via; a wiring layer disposed on the substrate with the insulative resin layer interposed therebetween; an inorganic adhesive layer formed only on a side surface of the through hole; and a through electrode filled in a connection hole which is formed by the inorganic adhesive layer in the through hole so as to penetrate between both surfaces of the substrate, wherein the through electrode is electrically connected to the wiring layer via the conductive via, and a thermal expansion coefficient of the inorganic adhesive layer is larger than a thermal expansion coefficient of the substrate and smaller than a thermal expansion coefficient of the through electrode..
Toppan Printing Co., Ltd.

new patent

Semiconductor device

The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material.
Denso Corporation

new patent

Semiconductor device

A semiconductor device includes a substrate, a thermal conduction layer on the substrate, a first wire pattern on the thermal conduction layer, a first semiconductor pattern a second semiconductor pattern, and a gate electrode between the first semiconductor pattern and the second semiconductor pattern. The gate electrode surrounds a periphery of the first wire pattern.
Samsung Electronics Co., Ltd.

new patent

Semiconductor device and fabricating method thereof

A semiconductor device is provided. A substrate includes a first region and a second region.

new patent

Semiconductor device including at least one lateral igfet and at least one vertical igfet and corresponding manufacturing method

A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface, first trenches and second trenches extending from the first surface into the semiconductor body, at least one lateral igfet including a first load terminal at the first surface, a second load terminal at the first surface and a gate electrode within the first trenches, and at least one vertical igfet including a first load terminal at the first surface, a second load terminal at the second surface and a gate electrode within the second trenches. The first trenches extend from the first surface into the semiconductor body deeper than a channel zone of the lateral igfet and confine the channel zone..
Infineon Technologies Ag

new patent

Method for manufacturing semiconductor device

There are prepared a semiconductor substrate having a first main surface and a second main surface, and an adhesive tape having a third main surface and a fourth main surface, the first main surface having a maximum diameter of not less than 100 mm. The semiconductor substrate fixed to the third main surface of the adhesive tape is placed in an accommodation chamber.
Sumitomo Electric Industries, Ltd.

new patent

Process and measuring an organic solid sample by glow discharge spectrometry

A system and a process for measuring, by glow discharge spectrometry, the elemental and/or molecular chemical composition of an organic solid sample (10). The sample (10) is positioned so as to seal a glow discharge plasma reactor (2), a gaseous mixture including at least one inert gas and gaseous oxygen is injected into the reactor (2), the concentration of gaseous oxygen being between 0.1% and 15% by weight of the gaseous mixture, an electric discharge of radiofrequency type is applied to the electrodes of the plasma reactor (2) in order to generate a glow discharge plasma, and the solid sample (10) is exposed to the plasma so as to etch an erosion crater in the solid sample (10); at least one signal representative of an ionized species of negative charge is selected and measured using a mass spectrometer (4)..
Horiba Jobin Yvon Sas

new patent

Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation

An edge ring assembly for a plasma processing chamber is provided, including: an edge ring configured to surround an electrostatic chuck (esc) that is configured for electrical connection to a first rf power supply, the esc having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface; an annular electrode disposed below the edge ring in the annular step and above the annular shelf; a dielectric ring disposed below the annular electrode for isolating the annular electrode from the esc, the dielectric ring positioned in the annular step over the annular shelf; and, a plurality of insulated connectors disposed through the esc and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second rf power supply and the annular electrode.. .
Lam Research Corporation

new patent

Apparatus and methods for generating reactive gas with glow discharges

An apparatus for generating a flow of reactive gas for decontaminating a material, surface or area, comprises a first electrode member comprising a first plurality of conductive surfaces and a second electrode member comprising a second plurality of conductive surfaces. The second electrode member is arranged in spaced relationship with the first electrode member to define a reactor channel.
Centralesupélec

new patent

Plasma induced flow electrode structure, plasma induced flow generation device, and manufacturing plasma induced flow electrode structure

In one embodiment, a plasma induced flow electrode structure has an electrode block, an insulating layer and an electrode layer. The electrode block has first and second surfaces and through holes penetrating between these first and second surfaces.
Kabushiki Kaisha Toshiba.

new patent

Plasma processing apparatus and plasma processing method

Disclosed is a plasma processing apparatus for performing a processing on a processing target substrate by applying of plasma of a processing gas to the processing target substrate. The plasma processing apparatus includes: a processing container configured to removably accommodate the processing target substrate; a lower electrode provided in the processing container to place the processing target substrate thereon; an upper electrode provided in the processing container to face the lower electrode; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; and an electromagnet having one or more annular coils around a central axis that passes through a center of the lower electrode vertically in an upper portion or at an upper side of the processing container..
Tokyo Electron Limited

new patent

Composite electronic component and board having the same

A composite electronic component includes a multilayer ceramic capacitor including a ceramic body in which dielectric layers and internal electrodes are alternately disposed, and first and second external electrodes disposed on a lower surface of the ceramic body; a tantalum capacitor including a body portion containing a sintered material of a tantalum powder and a tantalum wire having a portion embedded in the body portion, and disposed on the multilayer ceramic capacitor; and an encapsulant part enclosing the tantalum capacitor and the multilayer ceramic capacitor, wherein the internal electrodes are led to the lower surface of the ceramic body.. .
Samsung Electro-mechanics Co., Ltd.

new patent

Solar cell including compound having perovskite structure

A solar cell includes a first electrode; a light-absorbing layer, on the first electrode, containing a first compound and a second compound different from the first compound, the first compound having a perovskite structure represented by a compositional formula abx3 where a represents a monovalent cation, b represents a divalent cation, and x represents a halogen anion, the second compound containing the divalent cation; and a second electrode on the light-absorbing layer. The light-absorbing layer satisfies 0.05≦[a]/[b]≦0.99, where [a] is a number of moles of the monovalent cation in the light-absorbing layer, and [b] is a number of moles of the divalent cation in the light-absorbing layer..
Panasonic Corporation

new patent

Perovskite solar cell

A perovskite solar cell includes: a first electrode; an electron transport layer on the first electrode, containing a semiconductor; a porous layer on the electron transport layer, containing a porous material; a light-absorbing layer on the porous layer, containing a first compound and a second compound different from the first compound, the first compound having a perovskite structure represented by a compositional formula abx3 where a represents a monovalent cation, b represents a divalent cation, and x represents a halogen anion, the second compound containing the divalent cation; and a second electrode on the light-absorbing layer. A ratio of a number of moles of the monovalent cation in the light-absorbing layer to a number of moles of the divalent cation in the light-absorbing layer is 0.5 or more and 0.9 or less..
Panasonic Corporation

new patent

Energy storage dye-sensitized solar cell

Provided is an energy storage dye-sensitized solar cell having a simple structure. An energy storage dye-sensitized solar cell (1) of the present invention has a photoelectrode (2) and a charge storage electrode (3) on the same surface of a conductive substrate (5) such that the photoelectrode (2) and the charge storage electrode (3) act as one electrode.
The University Of Tokyo

new patent

Capacitor

A capacitor that includes a conductive porous base material; a dielectric layer; and an electrode. The conductive porous base material, the dielectric layer, and the upper electrode are laminated together to constitute an effective part that accumulates charges in the dielectric layer when a voltage is applied between the conductive porous base material and the electrode.
Murata Manufacturing Co., Ltd.

new patent

Multilayer ceramic capacitor

A multilayer ceramic capacitor includes a laminated body and first and second external electrodes respectively on both end surfaces of the laminated body. When regions where first internal electrodes or second internal electrodes are not present are regarded as side margin portions in a cross section of the laminated body as viewed from the laminating direction, the side margin portions include multiple side margin layers, and the content of si in the side margin layer closest to the internal electrode is lower than that in the side margin layer other than the side margin layer closest to the internal electrode..
Murata Manufacturing Co., Ltd.

new patent

Laminated ceramic electronic component and manufacturing same

A laminated ceramic electronic component that includes a laminate having a plurality of dielectric layers and a plurality of internal electrode layers laminated together. External electrodes having underlying electrode layers and plating layers are formed on both end surfaces of the laminate.
Murata Manufacturing Co., Ltd.

new patent

Multilayer ceramic capacitor

In a multilayer ceramic capacitor, each outer electrode includes a first outer electrode layer that contains ni and that is disposed on each main surface of a multilayer body and a second outer electrode layer that contains a glass component and cu and that covers one end portion of the first outer electrode layer which is closer to an end surface of the multilayer body, the first and second outer electrode layers are joined together in a region including an edge shared by the main surface and the end surface, the other end portion of the first outer electrode layer is exposed from the second outer electrode layer, and ni of the first outer electrode layer is diffused in the second outer electrode layer and is dissolved in cu of the second outer electrode layer to define a solid solution in the region including the edge.. .
Murata Manufacturing Co., Ltd.

new patent

Electronic component

An electronic component capable of suppressing variations in dimension of plating growth of a plating film serving as an external electrode. The external electrodes include plating films formed so as to extend from each of end surfaces to side surfaces of an electronic component body by electrolytic plating.
Murata Manufacturing Co., Ltd.

new patent

Multilayer ceramic capacitor and making multilayer ceramic capacitor

A multilayer ceramic capacitor includes a multilayer body that includes ceramic layers and inner conductor layers arranged in a stacking direction and that includes a first surface in which the inner conductor layers are exposed, and an outer electrode on the first surface of the multilayer body. The inner conductor layers contain ni.
Murata Manufacturing Co., Ltd.

new patent

Multilayer ceramic capacitor

A multilayer ceramic capacitor that includes a laminate which has a plurality of dielectric layers and a plurality of internal electrode layers respectively laminated. The dielectric layers are a perovskite type structure containing ba, sr, zr, ti and hf, and optionally ca, and further include v, wherein (number of moles of sr)/(number of moles of ba+number of moles of ca+number of moles of sr) is 0.6 to 0.95, (number of moles of zr)/(number of moles of zr+number of moles of ti+number of moles of hf) is 0.9 to 0.98, thicknesses of the dielectric layers are 1 μm or less, and an average particle size of dielectric particles constituting the dielectric layers is 0.8 μm or less..
Murata Manufacturing Co., Ltd.

new patent

Chip-type electronic component

A chip-type electronic component 1a mounted on a board includes a chip element assembly 2 having an upper surface, a lower surface, and a side surface; inner electrodes 3a, 3b, and 3c formed inside the chip element assembly 2; and a cover layer 5 that is formed with an insulation material having a lower permittivity than the chip element assembly 2 and is so provided as to cover at least part of the side surface of the chip element assembly 2. With this structure, unnecessary stray capacitance between the inner electrodes 3a, 3b, and 3c formed inside the chip element assembly 2 and other electrode members arranged outside the cover layer 5 in a direction orthogonal to a thickness direction of the chip element assembly 2 can be reduced, whereby the chip-type electronic component 1a capable of realizing the desired characteristics can be provided..
Murata Manufacturing Co., Ltd.

new patent

Inductor and printed circuit board

One object is to compensate the reduction of the q value due to reduction of core sectional area of a coil of an inductor, and the reduction of positional accuracy and adhesive strength of components mounted on a printed circuit board due to reduction of area of external electrodes, both caused by downsizing of component sizes. An inductor is provided which includes: a coil formed in an insulator and having one end and the other end thereof formed in a direction away from a mounting surface; and lead-out portions connected to the coil at positions more distant from the mounting surface than a portion of the coil closest to the mounting surface..
Taiyo Yuden Co., Ltd.

new patent

Coil module

A coil component is provided with only first and second columnar conductors that are a part of a coil electrode. This can simplify the manufacturing process and reduce the cost of the coil component.
Murata Manufacturing Co., Ltd.

new patent

Microresistor

A micro-resistor includes a resistor material layer, an electrode set and a first protective layer. The electrode set includes a first electrode and a second electrode to define an opening which exposes the resistor material layer.
Cyntec Co., Ltd.

new patent

Non-volatile memory with adjustable cell bit shape

Embodiments of the present disclosure generally relate to non-volatile memory and, in particular, non-volatile memory with adjustable cell bit shapes. In one embodiment, an adjustable memory cell is provided.
Hgst Netherlands B.v.

new patent

Skyrmion based universal memory operated by electric current

A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an fm phase background.. .
The Johns Hopkins University

new patent

Pixel cell circuits of compensation feedback voltage

The present disclosure relates to a pixel cell circuit of compensation feedback voltage. The pixel cell circuit is provided with the compensation capacitance (c_co), one end of the compensation capacitance (c_co) electrically connects to the compensation level wirings g(m)_co, and the other end of the compensation capacitance (c_co) electrically connects to the drain of the tft (t1) and the pixel electrode (p).
Shenzhen China Star Optoelectronics Technology Co. Ltd.

new patent

Display panel, display apparatus having the same and driving the same

A display panel includes a gate line, first and second data lines, first and second gate control lines, and first and second pixels. The first pixel includes a double-gate switching element including a gate electrode connected to the gate line, a source electrode connected to the first data line, and another gate electrode connected to the first gate control line.
Samsung Display Co., Ltd.

new patent

Electrophoretic display control device, electrophoretic display, electronic apparatus, and control method

An electrophoretic display control device applies a first voltage to a first electrode and applies a second voltage to a second electrode during a display rewriting period in a display unit in which a dispersion liquid containing particles are arranged between the first electrode and the second electrode that is a pixel electrode, and applies a third voltage that is lower than the first voltage to the first electrode and applies a fourth voltage that is lower than the second voltage to the second electrode during a display retention period.. .
Seiko Epson Corporation

new patent

Pixel driving circuit, pixel driving method, and display device

The present invention provides a pixel driving circuit, a pixel driving method, and a display device. The pixel driving circuit comprises a driving transistor, a light-emitting device and a threshold compensation unit; a control electrode, a first electrode and a second electrode of the driving transistor are all connected with the threshold compensation unit; the threshold compensation unit is connected with a data line, a first power supply terminal, and a first terminal of the light-emitting device.
Beijing Boe Optoelectronics Technology Co., Ltd.



Electrode topics:
  • Phosphoric Acid
  • Internal Combustion Engine
  • Carbon Atoms
  • Porous Carbon
  • Double Layer Capacitor
  • Graphene Oxide
  • Aqueous Solution
  • Lithium Ion
  • Exhaust Gas
  • Soot Sensor
  • Combustion
  • Calibration
  • Electronic Apparatus
  • Electrical Signal
  • Electric Conversion


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