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This page is updated frequently with new Electrode-related patent applications. Subscribe to the Electrode RSS feed to automatically get the update: related Electrode RSS feeds. RSS updates for this page: Electrode RSS RSS


Circuit board and vehicle brake hydraulic pressure control unit

Nissin Kogyo

Circuit board and vehicle brake hydraulic pressure control unit

Printed wiring board

Fanuc

Printed wiring board

Printed wiring board

Tokyo Electron Limited

Plasma processing apparatus and method for processing object


Date/App# patent app List of recent Electrode-related patents
08/27/15
20150245490 
 Electronic circuit apparatus patent thumbnailElectronic circuit apparatus
For an electronic circuit apparatus including a shunt resistor, provided is a measure for improving the heat dissipation performance of the shunt resistor. The shunt resistor includes electrodes at both ends.
Daikin Industries, Ltd.


08/27/15
20150245483 
 Circuit board and vehicle brake hydraulic pressure control unit patent thumbnailCircuit board and vehicle brake hydraulic pressure control unit
One embodiment provides a circuit board having a substrate and an electrode portion which is provided on the substrate. The electrode portion includes: a quadrangular land which is provided on a front surface of the substrate; a solder layer which is laminated on the whole of a front surface of the land; and a pad which is joined to a front surface of the solder layer.
Nissin Kogyo Co., Ltd.


08/27/15
20150245482 
 Printed wiring board patent thumbnailPrinted wiring board
In a printed wiring board on which an electronic component comprising electrode terminal rows on four peripheral sides or two opposite sides thereof is mounted, each of pads at the both ends of pad rows corresponding to the electrode terminal rows extend outwardly relative to the other pads in the direction of arrangement of the pads and has a shape obtained by diagonally cutting a corner located farthest from the center of the electronic component.. .
Fanuc Corporation


08/27/15
20150245460 
 Plasma processing  processing object patent thumbnailPlasma processing processing object
A plasma processing apparatus includes a processing chamber including a sidewall; a mounting table including a lower electrode and provided in the processing chamber; an upper electrode arranged to face the lower electrode in a first direction; a high frequency power supply configured to apply a high frequency power for plasma generation to the upper electrode; a gas supply system for supplying a processing gas into the processing chamber; and a grounding unit connected to a ground potential. A first space is defined between the mounting table and the sidewall.
Tokyo Electron Limited


08/27/15
20150245458 
 Apparatus for generating plasma patent thumbnailApparatus for generating plasma
Provided herein an apparatus for generating plasma, the apparatus including a nozzle array, first electrode, and housing. The nozzle discharges plasma.
Electronics And Telecommunications Research Institute


08/27/15
20150245455 
 Control system of a balanced micro-pulsed ionizer blower patent thumbnailControl system of a balanced micro-pulsed ionizer blower
In one embodiment of the invention, a method of automatically balancing ionized air stream created in bipolar corona discharge is provided. The method comprises: providing an air moving device with at least one ion emitter and reference electrode connected to a micro-pulsed ac power source, and a control system with at least one ion balance monitor and corona discharge adjustment control; generating variable polarity groups of short duration ionizing micro-pulses: wherein said micro-pulses are predominantly asymmetric in amplitude and duration of both polarity voltages and have a magnitude of at least one polarity ionizing pulses exceed the corona threshold..
Illinois Tool Works Inc.


08/27/15
20150245426 
 Illuminating  making the same patent thumbnailIlluminating making the same
An illuminating device includes an insulative housing, at least two electrodes and a light source. The insulative housing has opposite front and rear surfaces and is formed with at least two through holes.
Taiwan Green Point Enterprises Co., Ltd.


08/27/15
20150245413 
 Glass-melting electrode with cooling device and cooling device for a glass-melting electrode patent thumbnailGlass-melting electrode with cooling device and cooling device for a glass-melting electrode
A glass-melting electrode has a cooling device. The glass-melting electrode has an electrode body with a blind hole, and the cooling device has a cooling tube which can be inserted into the blind hole in order to feed coolant into the blind hole.
Plansee Se


08/27/15
20150245143 
 Condenser microphone patent thumbnailCondenser microphone
In a condenser microphone that has a function of attenuating a low frequency component and can effectively suppress distortion or thermal noise and external noise of a signal, an impedance converter converting a change in capacitance between a diaphragm and a fixed electrode of a condenser microphone unit into an audio signal is included. An output signal of the impedance converter is supplied to a low frequency inversion signal generation circuit including a low-pass filter and a phase inversion circuit.
Kabushiki Kaisha Audio-technica


08/27/15
20150245123 
 Capacitance type sensor, acoustic sensor, and microphone patent thumbnailCapacitance type sensor, acoustic sensor, and microphone
A capacitance type sensor has a substrate, a vibration electrode plate formed over the substrate, a back plate formed over the substrate so as to cover the vibration electrode plate, and a fixed electrode plate provided on the back plate so as to be opposite to the vibration electrode plate. At least one of the vibration electrode plate and the fixed electrode plate is separated into a plurality of regions, each of the plurality of regions being formed with a sensing section including the vibration electrode plate and the fixed electrode plate.
Omron Corporation


08/27/15
20150244951 

Solid-state imaging device and manufacturing solid-state imaging device


A solid-state imaging device includes a semiconductor layer, an insulation film, an electrode, and a voltage application unit. In the semiconductor layer, photodiodes that photoelectrically convert incident light into an electric charge and accumulate the electric charge are disposed in a two-dimensional array.
Kabushiki Kaisha Toshiba


08/27/15
20150244369 

Circuit arrangements and methods of operating the same


In various embodiments, a circuit arrangement may be provided. The circuit arrangement may include a level shifting stage configured to be coupled to a first reference voltage, the level shifting stage having an output node.
Agency For Science, Technology And Research


08/27/15
20150244347 

Bulk acoustic wave resonator having doped piezoelectric layer


In accordance with a representative embodiment, a bulk acoustic wave (baw) resonator comprises: a first electrode having a first electrode thickness; a second electrode having a second electrode thickness; and a piezoelectric layer having a piezoelectric layer thickness and being disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element. For a particular acoustic coupling coefficient (kt2) value and a series resonance frequency (fs) of the baw resonator, the first electrode thickness and the second electrode thickness are each greater than a thickness of a first electrode and a thickness of a second electrode of a baw resonator comprising an undoped piezoelectric layer..
Avago Technologies General Ip (singapore) Pte. Ltd


08/27/15
20150244346 

Bulk acoustic wave resonators having doped piezoelectric material and frame elements


A bulk acoustic wave (baw) resonator includes a first electrode; a second electrode; and a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer includes a piezoelectric material doped with at least one rare earth element.
Avago Technologies General Ip (singapore) Pte. Ltd


08/27/15
20150244345 

Tunable filter structures and design structures


Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure.
International Business Machines Corporation


08/27/15
20150244343 

Laterally-coupled acoustic resonators


An apparatus, comprises a piezoelectric layer, a first acoustic resonator comprising first and second electrodes formed on opposite sides of the piezoelectric layer, and a second acoustic resonator comprising first and second electrodes formed on opposite sides of the piezoelectric layer and acoustically coupled to the first acoustic resonator.. .
Avago Technologies General Ip ( Singapore) Pte. Ltd.


08/27/15
20150244315 

Method and system for applying electric fields to multiple solar panels


A solar cell management system for increasing the efficiency and power output of a solar cell and methods for making and using the same. The management system provides an electric field across one or more solar cells.
Solarlytics, Inc.


08/27/15
20150244313 

System and managing the power output of a photovoltaic cell


A solar cell management system for increasing the efficiency and power output of a solar cell and methods for making and using the same. The management system provides an electric field across an individual solar cell, an array of solar cells configured as a panel, or a group of solar panels.
Solarlytics, Inc.


08/27/15
20150244289 

Vibrator, manufacturing method therefor, and electronic appliance


A vibrator according to the invention includes: a substrate; a lower electrode that is formed on the substrate and has a through hole formed therein; an upper electrode that is disposed above the lower electrode so as to be spaced apart from the lower electrode, and includes a protruding portion that protrudes toward the through hole; and a facing portion that is formed on the substrate, and faces the protruding portion. A distance between the facing portion and the protruding portion is smaller than a distance between the lower electrode and the upper electrode..
Seiko Epson Corporation


08/27/15
20150244258 

Charge pump initialization device, integrated circuit having charge pump initialization device, and operation


In an initialization phase of a charge pump, an input signal is supplied to an input electrode of a capacitor of the charge pump and to an initialization device of the charge pump. An initialization signal is supplied to the initialization device of the charge pump.
Taiwan Semiconductor Manufacturing Company, Ltd.


08/27/15
20150244138 

Gas laser oscillator controlling adjusted level of laser power supply


A gas laser oscillator including discharge tubes, main discharge electrodes, auxiliary electrodes, an output mirror which outputs a laser, and a mechanical shutter which cuts off the laser output from the output mirror. To maintain the auxiliary discharge in the state where the laser output is zero, the base discharge command is set to a first command value when the mechanical shutter is closed, and is set to a second command value smaller than the first command value when the mechanical shutter is opened..
Fanuc Corporation


08/27/15
20150244137 

Air-cooled gas lasers with heat transfer assembly and associated systems and methods


Embodiments of an air-cooled gas laser with a heat transfer assembly are disclosed herein. A laser configured in accordance with one embodiment includes a laser superstructure and a laser superstructure having an opening and a cavity accessible through the opening, and an electrode assembly.
Universal Laser Systems, Inc.


08/27/15
20150244067 

Antenna device


An antenna device includes: a case; a board which is encased in the case and receives a signal from an antenna element; and a base for which closes a bottom face of the case. The base is integrally provided with a metal fastening member, and includes a sheet metal part for conducting earth connection between an earth electrode of the board and a vehicle panel, and the sheet metal part is surrounded with resin to be integrally molded therewith..
Yokowo Co., Ltd.


08/27/15
20150244049 

Dielectric waveguide filter with direct coupling and alternative cross-coupling


A dielectric waveguide filter comprising a block of dielectric material including a plurality of resonators defined by a plurality of slots defined in the block of dielectric material. The resonators are arranged on the block of dielectric material in one or more rows and columns.

08/27/15
20150244032 

Manufacturing nonaqueous electrolyte secondary battery


A manufacturing method according to the present invention is a method for manufacturing a nonaqueous electrolyte secondary battery including graphite as a negative-electrode active material. The manufacturing method includes: a step of assembling the battery including a positive electrode and a negative electrode; and a step of performing an initial charging process of performing first charging on the battery.
Toyota Jidosha Kabushiki Kaisha


08/27/15
20150244031 

Electrochemical cell with divalent cation electrolyte and at least one intercalation electrode


The present invention provides a novel electrochemical cell that comprises a cathode, an anode, and an electrolyte, where an ion species present in the electrolyte intercalates into the cathode upon discharge of the electrochemical cell.. .
Eos Energy Storage, Llc


08/27/15
20150244020 

Method for manufacturing nonaqueous electrolyte battery, and nonaqueous electrolyte battery


A negative electrode active material layer containing at least one selected from silicon and a silicon compound as a negative electrode active material is formed, and an amount of lithium exceeding an amount corresponding to a theoretical capacity of the negative electrode active material layer is brought into contact with the negative electrode active material layer so as to prepare a negative electrode. A positive electrode containing a lithium-absorption material capable of irreversibly absorbing lithium is prepared.
Panasonic Intellectual Property Management Co., Ltd.


08/27/15
20150244019 

Stepped electrode assembly having predetermined a reversible capacitance ratio in the interface between electrode units, battery cell and device comprising the same


There are provided an electrode assembly, and a battery cell, a battery pack, and a device. The electrode assembly includes a combination of two or more types of electrode units having different areas, wherein the electrode units are stacked such that steps are formed, and electrode units are formed such that a positive electrode and a negative electrode face one another at an interface between the electrode units..
Lg Chem, Ltd.


08/27/15
20150244018 

Cable-type secondary battery


Disclosed herein is a cable-type secondary battery having a horizontal cross section of a predetermined shape and extending longitudinally, comprising: a core for supplying lithium ions, which comprises an electrolyte; an inner electrode, comprising an open-structured inner current collector surrounding the outer surface of the core for supplying lithium ions, an inner electrode active material layer formed on the surface of the inner current collector, and a first electrolyte-absorbing layer formed on the outer surface of the inner electrode active material layer; a separation layer surrounding the outer surface of the inner electrode to prevent a short circuit between electrodes; a second electrolyte-absorbing layer formed on the surface of the separator; and an outer electrode surrounding the outer surface of the second electrolyte-absorbing layer and comprising an outer electrode active material layer and an outer current collector.. .
Lg Chem, Ltd.


08/27/15
20150244017 

Electrode plate and secondary battery


In a secondary battery including a large-sized electrode group including stacked positive and negative electrode plates, an electrode plate in which failures such as the separation and cracking of an active material layer and the abrasion and cracking of a current collector are unlikely to occur is provided. An electrode plate 21 includes a coated region cr where active material layers 21a are formed and an uncoated region nc where no active material layer is formed and has a configuration in which a boundary section between the coated region and the uncoated region is provided with a first buffer region c2 having a non-linear irregular shape in plan view..
Sharp Kabushiki Kaisha


08/27/15
20150244008 

Flow cell with shunt current counter electrode


Counter electrodes are used within the context of a flow cell to attract shunt current depositions during operation. The counter electrodes may be electrically connected with an anode of the flow cell to attract the depositions and then electrically connected with a cathode of the flow cell to remove the depositions..
Vizn Energy Systems, Inc.


08/27/15
20150244001 

Method and an electrode produced by infiltration


The present invention relates to electrodes having gd and pr-doped cerium oxide (cgpo) backbones infiltrated with sr-doped lacoo3 (lsc) and a method to manufacture them. Pr ions have been introduced into a prefabricated cgo backbone by infiltrating pr nitrate solution followed by high temperature firing.
Danmarks Tekniske Universitet


08/27/15
20150244000 

Carbon catalyst, manufacturing the carbon catalyst, and electrode and battery using the carbon catalyst


A method of manufacturing a carbon catalyst according to the present invention includes: a first step s2 involving heating a raw material containing a resin and a metal to carbonize the resin so that a carbon catalyst is obtained; a second step s3 involving subjecting the carbon catalyst to a treatment for removing the metal; and a third step s4 involving subjecting the carbon catalyst that has been subjected to the treatment to a heat treatment to improve an activity of the carbon catalyst.. .
Nisshinbo Holdings Inc.


08/27/15
20150243999 

Tantalum-containing tin oxide for fuel cell electrode material


A tantalum-containing tin oxide for a fuel cell electrode material, comprising tin oxide containing tantalum. The tantalum content is 0.001-30 mol %.
Mitsui Mining & Smelting Co., Ltd.


08/27/15
20150243997 

Negative electrode for secondary battery and secondary battery including the negative electrode


A negative electrode for a secondary battery, the negative electrode including: a current collector; an interlayer on the current collector and consisting of at least one first polymer selected from a cation-substituted polycarboxylic acid and a copolymer thereof; a negative electrode active material layer on the interlayer and which includes a negative electrode active material and a binder.. .
Samsung Electronics Co., Ltd.


08/27/15
20150243995 

Cross-linked binder composition for lithium ion batteries and methods for producing the same


The presently disclosed and/or claimed inventive concept(s) relates to a binder composition comprising a cross-linked polymer system. The cross-linked polymer system comprises an ionizable water soluble polymer cross-linked with a component using an esterification catalyst and/or an epoxy resin with two or more epoxide groups.
Hercules Incorporated


08/27/15
20150243994 

Modified guaran binder for lithium ion batteries and methods for producing the same


The presently disclosed and/or claimed inventive concept(s) relates generally to a composition of a slurry for use in preparation of a lithium ion battery. The slurry comprises a binder composition comprising a modified guaran for use in battery electrodes and methods of preparing such.
Hercules Incorporated


08/27/15
20150243993 

Electrode binder for secondary battery providing excellent adhesion strength and life characteristics


Disclosed is a binder for a secondary battery electrode including a copolymer of a hydrophilic monomer and a hydrophobic monomer, wherein, when a concentration of the copolymer is 5% in a solution based upon nmp as a solvent, a viscosity of the solution including the copolymer is 800 cp to 10000 cp. By using the binder, stability of an electrode is fundamentally improved from an electrode preparation process and, as such, a secondary battery having excellent lifespan characteristics is provided..
Lg Chem, Ltd.


08/27/15
20150243992 

Secondary battery and producing secondary battery


A secondary battery that includes a positive electrode active material layer, which is mainly composed of an organic compound having a multi-electron system, on a surface of a positive electrode current collector. The surface of the positive electrode active material layer is covered by an ion-conducting thin film that selectively transmits lithium ions.
Carlit Holdings Co., Ltd.


08/27/15
20150243991 

Small organic molecule based flow battery


The invention provides an electrochemical cell based on a new chemistry for a flow battery for large scale, e.g., grid-scale, electrical energy storage. Electrical energy is stored chemically at an electrochemical electrode by the protonation of small organic molecules called quinones to hydroquinones.
President And Fellows Of Harvard College


08/27/15
20150243989 

Carbon material for non-aqueous electrolyte secondary battery, negative electrode for non-aqueous electrolyte secondary battery, non-aqueous electrolyte secondary battery, and manufacturing carbon material for non-aqueous electrolyte secondary battery


An objet of the invention is to provide a non-aqueous electrolyte secondary battery superior in input-output characteristics even at a low temperature. To achieve the object, hybrid particles (carbon material) satisfying certain conditions, and composed of graphite particles and carbon particles with a primary particle size from 3 nm to 500 nm, preferably as well as amorphous carbon, are used as a negative electrode active material for a non-aqueous electrolyte secondary battery, so that the input-output characteristics of a non-aqueous electrolyte secondary battery at a low temperature can be improved remarkably..
Mitsubishi Chemical Corporation


08/27/15
20150243986 

Electrode active material, producing electrode active material, electrode, battery, and using clathrate compound


Provided is an electrode active material containing a clathrate compound that is more likely to withstand load involved in repetition of penetration and desorption of, e.g., lithium ions compared to no guest substance-encapsulating silicon clathrate compounds. An electrode active material according to the present invention includes a clathrate compound.
Nippon Steel & Sumitomo Metal Corporation


08/27/15
20150243985 

Lithium secondary battery


A lithium secondary battery includes: a positive electrode including a positive-electrode active material layer; a negative electrode including a negative-electrode active material layer; and an ion conductor being lithium ion conductive and interposed between the positive electrode and the negative electrode. The positive-electrode active material layer is composed of lithium cobaltate, and has an α-nafeo2 type crystal structure.
Panasonic Intellectual Property Management Co., Ltd.


08/27/15
20150243983 

Doped nickelate compounds


The invention relates to novel electrodes containing one or more active materials comprising: aa m1v m2w m3x m4y m5z o2-c(formula 1) wherein a comprises either sodium or a mixed alkali metal in which sodium is the constituent; m1 is nickel in oxidation state less than or equal to 4+, m2 comprises a metal in oxidation state less than or equal to 4+, m3 comprises a metal in oxidation state 2+, m4 comprises a metal in oxidation state less than or equal to 4+, and m5 comprises a metal in oxidation state 3+ wherein 0≦a≦1 v>0 at least one of w and y is >0 x≧0 z≧0 c>0.1 where (a, v, w, x, y, z and c) are chosen to maintain electroneutrality. Such materials are useful, for example, as electrode materials in sodium-ion battery applications..
Faradion Ltd


08/27/15
20150243982 

Positive electrode active material for nonaqueous electrolyte secondary batteries, and nonaqueous electrolyte secondary battery


A positive electrode active material for nonaqueous electrolyte secondary batteries, which has high energy density and excellent cycle characteristics. A positive electrode active material for nonaqueous electrolyte secondary batteries of the present invention is represented by general formula linixcoym(1-x-y)o2(wherein m represents at least one element selected from among metal elements, 0.3≦x<1.0 and 0<y≦0.5) and is configured of particles, each of which is an aggregate of crystallites.
Sanyo Electric Co., Ltd.


08/27/15
20150243980 

Positive electrode active material for non-aqueous electrolyte secondary batteries and non-aqueous electrolyte secondary battery


An exemplary embodiment of the present disclosure resides in a positive electrode active material for non-aqueous electrolyte secondary batteries including a li2mno3—limo2 solid solution {m is at least one metal element} which shows two peaks in an x-ray diffraction pattern each having a peak top at a diffraction angle of 18° to 19° and satisfying 0.001<r(b/a)<0.03, the r(b/a) is the ratio of the intensity b of one of the peaks on the higher angle side to the intensity a of the other peak on the lower angle side.. .
Panasonic Intellectual Property Management Co., Ltd.


08/27/15
20150243979 

Titanium-niobium composite oxide-based electrode active material and lithium secondary battery using the same


An electrode active material comprising in major proportions a monoclinic titanium-niobium composite oxide represented by the formula tinbxo(2+5x/2), wherein x is from 1.90 or more to less than 2.00.. .
Kabushiki Kaisha Toshiba


08/27/15
20150243978 

Positive electrode active material, lithium battery containing the same, and manufacturing the positive electrode active material


A positive electrode active material including a lithium transition metal oxide, wherein when a lithium battery including a positive electrode including the lithium transition metal oxide is analyzed by differential capacity analysis, an irreversible peak is present in a graph of differential capacity versus voltage in a range of about 4.5 volts versus lithium to about 4.8 volts versus lithium during a first charge/discharge cycle.. .
Samsung Electronics Co., Ltd.


08/27/15
20150243977 

Active material, electrode, secondary battery, battery pack, electric vehicle, electric power storage system, electric power tool, and electronic apparatus


A secondary battery includes: a cathode; an anode including an active material; and an electrolytic solution, wherein the active material includes a central section and a covering section provided on a surface of the central section, the central section includes silicon (si) as a constituent element, the covering section includes carbon (c) and hydrogen (h) as constituent elements, and one or more of positive ions represented by cxhy (x and y satisfy 2≦x≦6 and 3≦x≦9) are detected by positive ion analysis of the covering section with the use of time-of-flight secondary ion mass spectrometry.. .
Sony Corporation


08/27/15
20150243976 

Hydrogen absorption alloy powder, negative electrode, and nickel-hydrogen secondary cell


Hydrogen storage alloy powder, an anode, and a nickel-hydrogen rechargeable battery are provided, which are excellent in low-temperature characteristics and both in initial activity and cycle life at the same time, which properties are trading-off in conventional nickel-hydrogen rechargeable batteries. The alloy powder has a composition represented by formula (1) r1-amganibalcmd (r: rare earth elements including sc and y, or the like; 0.005≦a≦0.40, 3.00≦b≦4.50, 0≦c≦0.50, 0≦d≦1.00, 3.00≦b+c+d≦4.50), and has an arithmetical mean roughness (ra) of the powder particle outer surface of not less than 2 μm, or a crushing strength of not higher than 35,000 gf/mm2..
Santoku Corporation


08/27/15
20150243975 

Manufacturing electrode material, electrode material, and electric storage device provided with the electrode material


Provided are a manufacturing method for an electrode material and an electric storage device with the electrode material improving its output performance by making a carbon material carry a metal compound which is an unstable crystal through a high-temperature reaction and by conjugating the a composite material under an atmosphere containing oxygen. A precursor of the metal compound is carried on the carbon material while the carbon material is nanoparticulated.
Nippon Chemi-con Corporation


08/27/15
20150243974 

Hybrid electrodes with both intercalation and conversion materials


The disclosure set forth herein is directed to battery devices and methods therefor. More specifically, embodiments of the instant disclosure provide a battery electrode that comprises both intercalation chemistry material and conversion chemistry material, which can be used in automotive applications.
Quantumscape Corporation


08/27/15
20150243972 

Negative electrode active material, battery, battery pack, electronic apparatus, electric vehicle, electrical storage apparatus and electricity system


There is provided a negative electrode active material including a core particle comprising silicon; and at least one metal element selected from the group consisting of: ge, sn, ni, mo, w, ag, pd, cu, bi, fe, co, mn, cr, v, ga, b, sb, in, te, cd, rh, ru, nb, ta, re, os, ir, pt, pb and p. The negative electrode active material has an elemental composition that varies continuously from a center of the core particle to a surface of the core particle.
Sony Corporation


08/27/15
20150243971 

Positive active material, preparing method thereof, positive electrode for lithium secondary battery including the same, and lithium secondary battery employing the same


Provided are a positive active material that has a decreased amount of li-containing impurities that remain on a lithium transition metal composite oxide surface to decrease an amount of gas generation and has improved lifespan properties, a method of preparing the same, a positive electrode for a lithium secondary battery including the positive active material, and a lithium secondary battery including the same.. .
Samsung Sdi Co., Ltd.


08/27/15
20150243970 

Positive active material, positive electrode, and lithium battery including the same and manufacture thereof


A positive active material, a method of preparing the positive active material, a positive electrode including the positive active material, and a lithium battery including the positive active material are disclosed. The positive active material includes a core and a coating layer on the core.
Samsung Sdi Co., Ltd.


08/27/15
20150243966 

Positive electrode for non-aqueous electrolyte secondary battery and non-aqueous electrolyte secondary battery


A positive electrode for a non-aqueous electrolyte secondary battery includes a positive electrode active material layer which contains a first positive electrode active material including a li2mno3-limo2 solid solution and a second positive electrode active material including liam*o2 and in which the ratio of the weight of the first positive electrode active material per unit thickness to the total weight of the first positive electrode active material and the second positive electrode active material is higher in the vicinity of the surface of the positive electrode active material layer than that in the vicinity of the interface between the positive electrode active material layer and a current collector.. .
Panasonic Corporation


08/27/15
20150243965 

Method for forming pattern, structural body, producing comb-shaped electrode, and secondary cell


A method for forming a pattern multiple patterns of identical or different pattern materials can be formed on a support in a short time, a structural body, a method for producing a comb-shaped electrode, and a secondary cell. The pattern forming method, in which n patterns (n≧2) are formed on a support, includes forming a first resist layer on the support surface; repeating: forming a guide hole through all resist layers by exposure and development, filling a kth pattern material into the guide hole by a screen printing process, and forming a (k+1)th resist layer on the kth resist layer and the pattern materials, regarding kth (k=1 to n−1) pattern material and resist layer in order of k=1 to n−1; performing guide hole formation and nth pattern material filling similarly, and removing all of the resist layers..
Tokyo Ohka Kogyo Co., Ltd.


08/27/15
20150243964 

Electrode structure including insulating layer, manufacturing method thereof, and electrochemical device including the electrode


Disclosed is a method for manufacturing an electrode structure including (s1) coating and drying a slurry for an electrode active material layer on an electrode current collector placed on a heated bottom surface, (s2) coating and drying a slurry for an insulating layer including inorganic particles, a binder, and a solvent, on a heated roller located at a predetermined distance from the bottom surface, and (s3) transferring the dried slurry for an insulating layer to the dried slurry for an electrode active material layer on the bottom surface, and thermo-compressing the dried slurry for an insulating layer and the dried slurry for an electrode active material layer, to form an insulating layer on an electrode surface.. .
Lg Chem, Ltd.


08/27/15
20150243962 

Current collector, secondary battery, electronic device, and manufacturing method thereof


An object is to provide a secondary battery suitable for a wearable device. Another object is to provide a novel power storage device.
Semiconductor Energy Laboratory Co., Ltd.


08/27/15
20150243961 

Rectangular secondary battery


A rectangular secondary battery includes a current breaking mechanism with improved rigidity against vibration and impact. The current breaking mechanism is interposed in the middle of a current path electrically connected between an external terminal and a wound electrode group to break the current path by the rise of battery internal pressure.
Hitachi Automotive Systems, Ltd.


08/27/15
20150243960 

Secondary battery comprising current interrupt device


In a secondary battery (10) suggested herein, when a gas pressure in a battery case (12) is increased to or above a specified level and a current interrupt valve (26) is consequently raised to a connecting terminal (21) side, a thinned section (71) is broken around a portion that is joined to the current interrupt valve 26, the connecting terminal (21) and an electrode body are electrically interrupted from each other. An insulant (27) is disposed in a portion where the thinned section (71) is broken, and is interposed between both edges of the broken thinned section (71) after the thinned section (71) is broken..
Toyota Jidosha Kabushiki Kaisha


08/27/15
20150243957 

Rechargeable battery module


A rechargeable battery module includes unit battery cells and a bus bar connecting the unit battery cells in parallel. Each unit battery cell includes a cap plate, a case that accommodates an electrode assembly, lead tabs connected to the electrode assembly, one of the lead tabs including a cell fuse, first and second electrode terminals that penetrate the cap plate and are connected to the lead tabs, and an external short-circuit part including a membrane that seals a short-circuit hole of the cap plate and that is electrically connected to the second electrode terminal and a connection plate that is electrically connected to the first electrode terminal.
Samsung Sdi Co., Ltd.


08/27/15
20150243955 

Secondary battery and manufacturing the same


A secondary battery is disclosed. In one aspect, the secondary battery includes an electrode assembly including a first electrode plate, a second electrode plate and a separator.
Samsung Sdi Co., Ltd.


08/27/15
20150243953 

Secondary battery


A secondary battery includes a first electrode assembly configured to include a first positive electrode plate, a first negative electrode plate, and a first separator interposed between the first positive electrode plate and the first negative electrode plate, a second electrode assembly configured to include a second positive electrode plate, a second negative electrode plate, and a second separator interposed between the second positive electrode plate and the second negative electrode plate, the second separator having a porosity greater than that of the first separator, the first electrode assembly having high capacity, as compared with second electrode assembly, and the second electrode assembly having high power, as compared with the first electrode assembly, and a case configured to accommodate the first and second electrode assemblies therein.. .
Samsung Sdi Co., Ltd.


08/27/15
20150243951 

Battery, battery separator and producing battery separator


A battery includes a positive electrode, a negative electrode, a separator interposed therebetween, and an electrolyte. The separator includes a plurality of nanofibers and has a form of a sheet having a first surface and a second surface opposite thereto.
Panasonic Intellectual Property Management Co., Ltd.


08/27/15
20150243948 

Battery assembly with adhesive stop mechanism


A battery assembly provided with an adhesive stop mechanism is disclosed. The battery assembly includes multiple battery cells, a primary retaining frame, a secondary retaining frame, two common electrodes and a bonding layer.
Atieva, Inc.


08/27/15
20150243947 

Power source device, electric vehicle comprising power source device, accumulator device


A power supply device comprises plural battery cells having electrode portions, and bus bars connecting the electrode portions of the plural battery cells each other. The bus bar comprises a thin portion thinner than the other portion formed in at least one part of the end edge of the bus bar, and are welded to the electrode portion of the battery cell through the thin portion.
Sanyo Electric Co., Ltd.


08/27/15
20150243942 

Non-aqueous electrolyte battery


Provided is a non-aqueous electrolyte battery including: a power-generating element; and a battery container configured to house the power-generating element. The power-generating element includes: a positive electrode; a negative electrode; a separator interposed between the positive and negative electrodes; and a non-aqueous electrolyte.
Panasonic Intellectual Property Management Co., Ltd.


08/27/15
20150243941 

Secondary battery


A secondary battery is disclosed. In one aspect, the secondary battery includes an electrode assembly including a first electrode plate, a second electrode plate and a separator.
Samsung Sdl Co., Ltd.


08/27/15
20150243940 

Rechargeable battery


A rechargeable battery is disclosed. In one aspect, the rechargeable battery includes an electrode assembly including a first electrode plate, a second electrode plate and a separator.
Samsung Sdi Co., Ltd.


08/27/15
20150243939 

Cap assembly for battery


A cap assembly for a battery includes a roll combination member, a terminal combination member, an electrode terminal, a strength reinforcing block, a cap, and a pad assembly. The roll combination member includes at least one opening, so that terminal disposed portions of 2k rolls are capable of passing through the opening and k is an integer greater than 1, wherein one terminal disposed portion is formed by bending portions of central members of two adjacent rolls.
Industrial Technology Research Institute


08/27/15
20150243936 

Lithium secondary batteries and nonaqueous electrolyte for use in the same


A lithium secondary battery comprising a battery case and an electrode group is provided. The electrode group comprises a positive electrode, a negative electrode, a microporous film separator and a nonaqueous electrolyte comprising a lithium salt.
Mitsubishi Chemical Corporation


08/27/15
20150243935 

Electrical storage device


An electrical storage device includes a case, an electrode assembly accommodated in the case, an electrode terminal, a terminal insulating member, and an annular sealing member. The electrode terminal has a base located inside the case and a polar column portion, which projects from the base.
Kabushiki Kaisha Toyota Jidoshokki


08/27/15
20150243927 

Organic el lighting panel substrate, manufacturing organic el lighting panel substrate, organic el lighting panel, and organic el lighting device


Provided is an organic el illumination panel substrate, and a manufacturing method therefor, that improves the manufacturing efficiency and reduces the cost for an organic el illumination panel substrate and that is capable of achieving an organic el illumination panel with superior yields and reliability. The organic el illumination panel substrate has a light transmitting substrate (11), a transparent electrode (12) and an auxiliary electrode (13).
Nec Lighting, Ltd.


08/27/15
20150243924 

Method of manufacturing organic el element and organic el element


An organic el element is provided having a pair of electrodes and an organic functional layer disposed therebetween, the pair of electrodes consisting of an upper electrode and a lower electrode. In the pair of electrodes, the upper electrode includes a first layer and a second layer, the first layer being in contact with the organic functional layer and the second layer being in contact with the first layer.
Joled Inc.


08/27/15
20150243922 

Light emitting apparatus and fabricating the same


Although an ink jet method known as a method of selectively forming a film of a high molecular species organic compound, can coat to divide an organic compound for emitting three kinds (r, g, b) of light in one step, film forming accuracy is poor, it is difficult to control the method and therefore, uniformity is not achieved and the constitution is liable to disperse. In contrast thereto, according to the invention, a film comprising a high molecular species material is formed over an entire face of a lower electrode connected to a thin film transistor by a coating method and thereafter, the film comprising the high molecular species material is etched by etching by plasma to thereby enable to selectively form a high molecular species material layer.
Semiconductor Energy Laboratory Co., Ltd.


08/27/15
20150243920 

Method for manufacturing a light-emitting electrochemical cell


A method for manufacturing a light-emitting electrochemical cell (lec) is disclosed. The lec comprises a first electrode, a second electrode, and a first light-emitting active material in electrical contact with and separating the first and second electrodes.
Lunalec Ab


08/27/15
20150243919 

Organic light emitting diode display


An organic light emitting device includes a pixel electrode, a hole auxiliary layer formed on the pixel electrode, an organic emission layer formed on the hole auxiliary layer, an electron auxiliary layer formed on the organic emission layer, and a common electrode layer formed on the electron auxiliary layer. An electric field dependency of electron mobility is increased by increasing an energetic disorder or decreasing a positional disorder for the organic emission layer..
Samsung Display Co., Ltd.


08/27/15
20150243918 

Light-emitting element, light-emitting device, electronic device, and lighting device


A light-emitting element with a high current efficiency is provided. A low-power consumption light-emitting device is also provided.
Semiconductor Energy Laboratory Co., Ltd.


08/27/15
20150243913 

Organic electroluminescence device


The present invention relates to an electroluminescence device having high luminous efficiency (for example, external quantum efficiency) and high durability and causing little chromaticity shift after device deterioration. The present invention also relates to an organic electroluminescence device material comprising a substrate having thereon a pair of electrode and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein the light emitting layer contains a metal complex having a group represented by formula (i)..
Udc Ireland Limited


08/27/15
20150243892 

Organic compound, light-emitting element, display module, lighting module, light-emitting device, display device, electronic device, and lighting device


A light-emitting element with high emission efficiency. The light-emitting element includes a pair of electrodes and an el layer between the pair of electrodes.
Semiconductor Energy Laboratory Co., Ltd.


08/27/15
20150243888 

Resistive random access memory devices with extremely reactive contacts


A resistive switching device includes a first electrode and a transition metal oxide layer formed on the first electrode. An oxygen scavenging electrode is formed on the transition metal oxide wherein the oxygen scavenging electrode removes oxygen from the transition metal oxide layer to increase formation of oxygen vacancies in the transition metal oxide layer to enable a switching mode when a bias is applied between the first electrode and the oxygen scavenging electrode..
International Business Machines Corporation


08/27/15
20150243887 

Semiconductor memory device and a manufacturing the same


A semiconductor memory device comprises a memory cell array. The memory cell array comprises a plurality of first wiring lines, a plurality of second wiring lines extending crossing the first wiring lines, and a plurality of memory cells disposed at intersections of the first and second wiring lines.
Kabushiki Kaisha Toshiba


08/27/15
20150243884 

Metal nitride keyhole or spacer phase change memory cell structures


Non-volatile memory cell having small programming power and a reduced resistance drift are provided. In one embodiment of the present application, a non-volatile memory cell is provided that includes a layer of dielectric material that has a via opening that exposes a surface of a bottom electrode.
International Business Machines Corporation


08/27/15
20150243880 

Piezoelectric actuator of a multilayer design and fastening an outer electrode in a piezoelectric actuator


A piezoelectric actuator of a multilayer design includes outer electrodes that are fastened by means of a bonding layer applied by thermal spraying. For example, the outer electrodes are formed as a woven wire fabric.
Epcos Ag


08/27/15
20150243877 

Piezoelectric element unit and driving device


A piezoelectric element unit comprises an element body having internal electrodes laminated with piezoelectric layers therebetween and a pair of external electrodes electrically connected to the internal electrodes and an electric connection part for connecting a wiring part to the external electrodes. The electric connection part is composed of a conductive resin adhesive part and the conductive resin adhesive part is covered by a resin part..
Tdk Corporation


08/27/15
20150243873 

Acoustic wave device with suppressed higher order transverse modes


In an acoustic wave device, an unnecessary high-order transverse mode wave is suppressed. The acoustic wave device includes a piezoelectric substrate, at least one pair of interdigital transducer (idt) electrodes formed on the piezoelectric substrate, and a dielectric film which covers at least a part of the piezoelectric substrate and the idt electrodes.
Skyworks Panasonic Filter Solutions Japan Co., Ltd


08/27/15
20150243867 

Device and thermoelectronic energy conversion


A thermoelectronic energy converter device (100) comprises an electron emitter (11) being adapted for a temperature-dependent release of electrons (1), an electron collector (21) being adapted for collecting the electrons (1), wherein the electron collector (21) is spaced from the electron emitter (11) by an evacuated gap (2), a gate electrode (31) being arranged between the electron emitter (11) and the electron collector (21) for subjecting the electrons (1) in the gap (2) to an accelerating electric potential, wherein the gate electrode (31) has a plurality of electrode openings (34) being arranged for transmitting electrons (1) miming from the electron emitter (11) to the electron collector (21), and a magnetic field device (50) being arranged for creating a magnetic field with magnetic field lines extending between the electron emitter and the electron collector (11, 21), wherein the magnetic field device (50) is arranged such that at least a portion of the magnetic field lines pass through the electrode openings (34). Furthermore, a method of converting energy using the thermoelectronic energy converter device (100) is described..
The Board Of Trustees Of The Leland Stanford Junior University


08/27/15
20150243856 

Ultraviolet light emitting device


An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin. The ultraviolet light emitting device is an ultraviolet light emitting device including: an ultraviolet light emitting element (2) formed of a nitride semiconductor; and an ultraviolet-transparent sealing resin (3) covering the ultraviolet light emitting element (2), wherein at least a specific portion (3a) of the sealing resin (3), which is in contact with pad electrodes (18) and (17) of the ultraviolet light emitting element (2), is a first type amorphous fluororesin, and a terminal functional group of a polymer or a copolymer that forms the first type amorphous fluororesin is a nonreactive terminal functional group which is not bondable to a metal that forms the pad electrodes (16) and (17)..
Soko Kagaku Co., Ltd


08/27/15
20150243853 

Method of manufacturing light emitting diode package


A method of manufacturing a light emitting diode (led) package may include forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer on a growth substrate, forming first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, bonding a first surface of a light transmissive substrate opposite to a second surface thereof to the light emitting structure, identifying positions of the first and second electrodes that are seen through the second surface of the light transmissive substrate, forming one or more through holes in the light transmissive substrate to correspond to the first and second electrodes, and forming first and second via electrodes by filling the through holes with a conductive material.. .
Samsung Electronics Co., Ltd.


08/27/15
20150243852 

Led chip-on-board component and lighting module


An object of the present invention is to provide a light emitting diode (led) construction. It is an object of certain embodiments of the present invention to provide an led chip-on-board (cob) construction comprising, a thermally and electrically conductive substrate, at least one semiconductor light emitting die or diode and an electrically insulating material.
Lumichip Limited


08/27/15
20150243849 

Quantum dot light-emitting diode display device


A quantum dot light-emitting diode display device is disclosed which includes: a substrate; a light emission diode layer stacked on the substrate and configured to emit light, the light emission diode layer including a cathode, a quantum dot light-emitting layer formed on the cathode to include quantum dots, and an anode formed on the quantum dot light-emitting layer; at least one electrode of the quantum dot light emission diode layer based on carbon; at least one scan line; at least one data line; at least one power line; and a field-effect transistor connected to the light emission diode layer.. .

08/27/15
20150243847 

High efficiency light emitting diode and fabricating the same


Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (led). The led according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack..
Seoul Viosys Co., Ltd.


08/27/15
20150243846 

Light emitting device package


A light emitting device package including a first electrode pad and a second electrode pad formed to contact a lower surface of a light emitting device; a bonded insulating layer pattern formed to at least partially cover side surfaces and lower surfaces of the first electrode pad and the second electrode pad; a substrate, in which via holes are formed which penetrate the substrate from a first surface of the substrate that contacts a lower surface of the bonded insulating layer pattern to a second surface of the substrate that is opposite to the first surface; a through-electrode disposed in each via hole and contacting the lower surface of one of the respective first electrode pad and the second electrode pad; and a through-electrode insulating layer formed between the through-electrode and the substrate, and having an upper surface that contacts a portion of the lower surface of the bonded insulating layer pattern.. .
Samsung Electronics Co., Ltd.


08/27/15
20150243836 

Method for making light emitting diodes


A method for making a led comprises following steps. A substrate having a surface is provided.
Hon Hai Precision Industry Co., Ltd.


08/27/15
20150243834 

Solar cell module


Provided is a solar cell module comprising a crystalline silicon wafer, at least one amorphous silicon layer provided on at least one of a top and bottom of the crystalline silicon wafer, a transparent conductive film provided on a surface of the at least one amorphous silicon layer, electrodes provided on a surface of the transparent conductive film and a division unit to divide the transparent conductive film into a current-carrying region and a non-current-carrying region, wherein the current-carrying region is electrically connected to the electrodes and the non-current-carrying region is electrically disconnected from the electrodes.. .
Tes, Co., Ltd.


08/27/15
20150243831 

Electrodeposition of thin-film cells containing non-toxic elements


A structure and method of making a thin-film solar cell is provided. A thin-film solar cell includes a substrate, absorber layer and a buffer layer.
International Business Machines Corporation


08/27/15
20150243830 

Method of manufacturing thin-film solar cell


A method of manufacturing a thin-film solar cell includes a first electrode forming step of forming a first electrode on a substrate; a first partition groove forming step of forming a first partition groove for dividing the first electrode and exposing a surface of the substrate in the first partition groove; a semiconductor layer forming step of forming a semiconductor layer on the first electrode and in the first partition groove; a second partition groove forming step of forming a second partition groove for dividing the semiconductor layer and exposing a surface of the first electrode in the second partition groove; a second electrode forming step of forming a second electrode on the semiconductor layer and in the second partition groove; and a third partition groove forming step of forming a third partition groove for dividing the second electrode and the semiconductor layer and exposing the surface of the first electrode in the third partition groove. At least one of the first partition groove forming step, the second partition groove forming step, and the third partition groove forming step includes an opening forming step of forming an opening in a partition groove forming layer where a partition groove is to be formed, by removing beforehand a part of the partition groove forming layer corresponding to a starting point from which the partition groove is formed, and thereby exposing a surface of a lower layer below the partition groove forming layer in the opening, and a partition groove forming step of bringing a needle into contact with the surface of the lower layer exposed in the opening and forming the partition groove by moving the needle in a predetermined direction..
Solar Frontier K.k.


08/27/15
20150243827 

Display substrate, manufacturing the same and touch display apparatus having the same


A display substrate includes a pixel switching element, a pixel electrode, a reference line, a control switching element, a bias line, a light sensing element, a sensing capacitor and a light blocking filter pattern. The pixel switching element is connected to a data line and a gate line, includes a first semiconductor pattern.
Samsung Display Co., Ltd.


08/27/15
20150243826 

Tunable heterojunction for multifunctional electronics and photovoltaics


Provided in one embodiment is a method for operating a photodiode device, which device comprises: at least one layer of an n-doped semiconductor material; two portions of a dielectric material separately disposed over separate regions of the at least one layer of the n-doped semiconductor material; at least one monolayer of a carbon-based material disposed between the two portions of dielectric material and over the at least one layer of the n-doped semiconductor material; two terminal electrodes, each electrode disposed in electrical communication with a respective one of the portions of dielectric material; and a gate electrode in electrical communication with the at least one layer of the n-doped semiconductor material. The method comprises: applying a voltage across the gate electrode and one of the two terminal electrodes; and exposing the photodiode device to electromagnetic radiation..
Northeastern University


08/27/15
20150243820 

Photoelectric conversion apparatus and device


The present disclosure relates to a photoelectric conversion apparatus. The photoelectric conversion apparatus includes a carbon nanotube layer, a first thermoelectric conversion layer, a second thermoelectric conversion layer, a first electrode and a second electrode.
Hon Hai Precision Industry Co., Ltd.


08/27/15
20150243818 

Solar cell module and manufacturing the same


A method for manufacturing a solar cell module includes a cell forming operation of forming a plurality of first and second electrodes on a back surface of a semiconductor substrate to form each a plurality of solar cells, and a tabbing operation including at least one of a connection operation of performing a thermal process to respectively connect a first conductive line and a second conductive line to the first electrodes and the second electrodes of each solar cell using a conductive adhesive and an optional string forming operation of performing a thermal process to connect the first conductive line included in one solar cell and the second conductive line included in other solar cell adjacent to the one solar cell to an interconnect. The tabbing operation includes at least two thermal processes each having a different maximum temperature..
Lg Electronics Inc.


08/27/15
20150243813 

Solar cell, manufacturing the same, and solar cell module


A solar cell, a method for manufacturing the same, and a solar cell module are discussed. The solar cell includes a semiconductor substrate including a plurality of first electrodes and a plurality of second electrodes, which are separated from each other on a back surface of the semiconductor substrate, and an insulating member including a first auxiliary electrode connected to the plurality of first electrodes and a second auxiliary electrode connected to the plurality of second electrodes on a front surface of the insulating member.
Lg Electronics Inc.


08/27/15
20150243806 

Method for fabricating back-contact type solar cell


A method for fabricating back-contact type solar cells is provided. The method comprises forming a plurality of n-type doped zones, a plurality of p-type doped zones, and a back anti-reflection layer on a back surface of a semiconductor substrate.
Au Optronics Corporation


08/27/15
20150243802 

Light receiving and emitting element and sensor device using same


A light receiving and emitting element includes a substrate; a light emitting element formed on an upper face of the substrate; a light receiving element formed on an upper face side of the substrate; a light emitting element-side first electrode pad; and a metal lump joined to the light emitting element-side first electrode pad. The light emitting element-side electrode pad is disposed the upper face of the substrate through an insulating layer so that the metal lump blocks light emitted from the light emitting element and propagating toward the light receiving element..
Kyocera Corporation


08/27/15
20150243801 

Electrode provided with ubm structure and producing same


A problem addressed by an embodiment of the present invention lies in providing a ubm structure which includes thin layers and can prevent diffusion of solder into an electrode. The ubm structure according to an embodiment of the present invention includes: a first ubm layer on an electrode, a second ubm layer on the first ubm layer, and a passivated metal layer between the first ubm layer and the second ubm layer.
Siemens Aktiengesellschaft


08/27/15
20150243798 

Solar cell module


A solar cell module includes first and second solar cells each including a plurality of first and second electrodes formed on a back surface of a semiconductor substrate, a first conductive line connected to the first electrodes, and a second conductive line connected to the second electrodes, and an interconnector connecting the first conductive line of the first solar cell to the second conductive line of the second solar cell. At least one of an area of an overlap portion, an area of a connection portion, a connection position, and a connection shape between the interconnector and the first conductive line of the first solar cell is different from at least one of an area of an overlap portion, an area of a connection portion, a connection position, and a connection shape between the interconnector and the second conductive line of the second solar cell..
Lg Electronics Inc.


08/27/15
20150243794 

Display device and electronic appliance


A display device with low manufacturing cost, with low power consumption, capable of being formed over a large substrate, with a high aperture ratio of a pixel, and with high reliability is provided. The display device includes a transistor electrically connected to a light-transmitting pixel electrode and a capacitor.
Semiconductor Energy Laboratory Co., Ltd.


08/27/15
20150243793 

Thin film transistor and fabricating the same


A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source and drain electrodes. The gate electrode is formed on a substrate.
Samsung Display Co., Ltd.


08/27/15
20150243792 

Semiconductor device


To suppress a decrease in on-state current in a semiconductor device including an oxide semiconductor. A semiconductor device includes an insulating film containing silicon, an oxide semiconductor film over the insulating film, a gate insulating film containing silicon over the oxide semiconductor film, a gate electrode which is over the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film.
Semiconductor Energy Laboratory Co., Ltd.


08/27/15
20150243791 

Circuit board and display device


The present invention provides a circuit substrate exhibiting an excellent transmittance and being capable of suitably repair broken conductive lines; and a display device. In the circuit substrate of the present invention, the first conductive lines are arranged in spaces between electrode rows, with two of the first conductive lines per space between the rows, the second conductive lines are arranged in spaces between electrode columns, with one of the second conductive lines in every other space between the columns, the storage capacitor lines including linear portions that extend in the direction in which the second conductive lines extend, in spaces between the electrode columns where the second conductive lines are not arranged, the pattern film including, in a plan view of main surface of the substrate, first linear portions extending in the direction in which the second conductive lines extend, in the spaces between the electrode rows, the first linear portions each including two end portions each overlapping an end portion of a linear portion of one of the storage capacity lines..
Sharp Kabushiki Kaisha


08/27/15
20150243790 

Semiconductor device and producing same


This tft substrate (100a) includes: a gate connecting layer (3a) formed on a substrate (1) out of a same conductive film as a gate electrode (3) or a transparent connecting layer (2a) formed on the substrate (1) out of a same conductive film as a first transparent electrode (2); an oxide layer (5z) which is formed on an insulating layer (4) and which includes at least one conductor region (5a); and a source connecting layer (6a) formed on the oxide layer (5z) out of a same conductor film as a source electrode (6s). The source connecting layer (6a) is electrically connected to either the gate connecting layer (3a) or the transparent connecting layer (2a) via the at least one conductor region (5a)..
Sharp Kabushiki Kaisha


08/27/15
20150243778 

Semiconductor device


A semiconductor device disclosed herein is provided with: a source electrode; a gate electrode; a drain electrode; a first region of a first conductivity type formed in a range exposed at an upper surface of the semiconductor substrate a second region of a second conductivity type; a third region of the first conductivity type; and a fourth region of the first conductivity type. The fourth region includes: a first drift region formed in a range exposed at the upper surface; a second drift region having a first conductivity type impurity concentration higher than that of the first drift region, and adjacent to the first drift region; and a low concentration drift region having a first conductivity type impurity concentration lower than that of the first drift region.
Toyota Jidosha Kabushiki Kaisha


08/27/15
20150243777 

Semiconductor device


There is provided a semiconductor device having ldmos transistors embedded in a semiconductor substrate to boost source-drain breakdown voltage, with arrangements to prevent fluctuations of element characteristics caused by electric field concentration so that the reliability of the semiconductor device is improved. A trench is formed over the upper surface of a separation insulating film of each ldmos transistor, the trench having a gate electrode partially embedded therein.
Renesas Electronics Corporation


08/27/15
20150243772 

Semiconductor device


An insulated gate bipolar transistor having a gate electrode (7) and an emitter electrode (9) is provided in a transistor region. A termination region is arranged around the transistor region.
Mitsubishi Electric Corporation


08/27/15
20150243771 

Semiconductor device


A semiconductor device according to embodiments includes a semiconductor substrate, first semiconductor layers of a first conductive type provided on a surface of the semiconductor substrate, extend in a first direction, and are surrounded by a gate layer, second semiconductor layers of the first conductive type provided between the first semiconductor layers, a third semiconductor layer of the first conductive type provided at ends of the first direction of the first semiconductor layers and is surrounded by the gate layer, a fourth semiconductor layer of a second conductive type provided in the semiconductor substrate, a sixth semiconductor layer of the first conductive type provided on a back surface of the semiconductor substrate, a seventh semiconductor layer of the second conductive type provided between the sixth semiconductor layer and the first semiconductor layers, an emitter electrode, and a collector electrode.. .
Kabushiki Kaisha Toshiba


08/27/15
20150243769 

Semiconductor device and manufacturing method thereof


A semiconductor device includes a semiconductor layer. A gate dielectric film is provided on the semiconductor layer.
Kabushiki Kaisha Toshiba


08/27/15
20150243764 

Method for manufacturing a semiconductor structure


The present invention discloses a method for manufacturing a semiconductor structure, which comprises the following steps: a) providing an soi substrate, a shallow trench is formed on the soi substrate, with the defined area of the shallow trench corresponding to the active region; b) forming the heavily doped layer on the shallow trench sidewall close to the active region; c) filling the shallow trench to form the shallow trench isolation structure; d) forming the semiconductor device in the active region. In the present disclosure, pn junctions are formed in the source electrode and the body region of the soi, to provide a discharge channel for the charge accumulated in the body region, to reduce the impact of the floating body effect, and to improve the reliability of the device..
Institute Of Microelectronics, Chinese Academy Of Sciences


08/27/15
20150243753 

Semiconductor device


A mosfet cell of a semiconductor device includes a polysilicon gate electrode and an n+-source region formed in an upper portion of an n−-drift layer. An interlayer insulating film covers the gate electrode.
Mitsubishi Electric Corporation


08/27/15
20150243752 

Reacted conductive gate electrodes and methods of making the same


A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium.
Taiwan Semiconductor Manufacturing Co., Ltd.


08/27/15
20150243748 

Vertical access devices, semiconductor device structures, and related methods


A vertical access device comprises a semiconductive base comprising a first source/drain region, a semiconductive pillar extending vertically from the semiconductive base, and a gate electrode adjacent a sidewall of the semiconductive pillar. The semiconductive pillar comprises a channel region overlying the first source/drain region, and a second source/drain region overlying the channel region.
Micron Technology, Inc.


08/27/15
20150243744 

Semiconductor device


A semiconductor device includes a substrate and a plurality of transistors arranged on the substrate in an array. The transistor includes a first electrode, a plurality of second electrodes, and a gate electrode.
Delta Electronics, Inc.


08/27/15
20150243733 

Semiconductor device including multiple nanowire transistor


A semiconductor device comprises at least two nanowire patterns over a substrate, wherein the at least two nanowire patterns have increasingly narrower widths as they extend away from the substrate and have different channel impurity concentrations. A gate electrode surrounds at least a part of the at least two nanowire patterns.
Samsung Electronics Co., Ltd.


08/27/15
20150243731 

Semiconductor device


An isolation region includes an element isolation film and a field plate electrode. The field plate electrode overlaps the element isolation film and surrounds a first circuit when seen in a plan view.
Renesas Electronics Corporation


08/27/15
20150243730 

Multi-step forming a metal film


The present disclosure relates to an integrated chip having a titanium nitride film that provides for a reduced leakage path, and an associated method of formation. In some embodiments, the integrated chip comprises a semiconductor substrate.
Taiwan Semiconductor Manufacturing Co., Ltd.


08/27/15
20150243729 

Mems fixed capacitor comprising a gas-containing gap and process for manufacturing said capacitor


The mems fixed capacitor includes a bottom metal electrode formed onto a substrate, a top metal electrode supported by metal pillars above the bottom metal electrode, and a gas-containing gap forming a non-solid dielectric layer between said top and bottom metal electrodes; the distance between the top and bottom metal electrodes is not more than 1 μm and the thickness of the top metal electrode is not less than 1 μm.. .
Delfmems


08/27/15
20150243727 

Semiconductor devices and methods of fabricating the same


Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate.
Samsung Electronics Co., Ltd.


08/27/15
20150243726 

Circuit for preventing static electricity and display device having the same


A static electricity prevention circuit of a display device including: a driving circuit configured to drive a display unit that displays an image, at least one clock signal wire configured to transmit a clock signal to the driving circuit, at least one transistor electrically coupled to the clock signal wire, and at least one capacitor including a first electrode coupled to a source electrode and to a drain electrode of the transistor, and a second electrode configured to be maintained at a voltage.. .
Samsung Display Co., Ltd.


08/27/15
20150243725 

Organic light emitting display apparatus, manufacturing the same, and mask used in the method


A method of manufacturing an organic light emitting display apparatus is provided. A plurality of first electrodes is formed on a substrate.
Samsung Display Co., Ltd.


08/27/15
20150243724 

Thin film transistor substrate and display using the same


Provided are a thin film transistor (tft) substrate and a display using the same. A display includes: a first tft, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second tft, including: a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer..
Lg Display Co., Ltd.


08/27/15
20150243723 

Thin film transistor substrate and display using the same


Provided are a thin film transistor (tft) substrate and a display using the same. A tft substrate includes: a substrate, a first tft on the substrate, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second tft on the substrate, including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer..
Lg Display Co., Ltd.


08/27/15
20150243721 

Organic light emitting display device


A pixel includes a driving transistor to control an amount of drain-to-source current flowing from a first electrode to a second electrode based on a voltage applied to a first gate electrode. The current is used to control light emitted from an organic light emitting diode.
Samsung Display Co., Ltd.


08/27/15
20150243716 

Organic light emitting display and manufacturing the same


An organic light emitting display includes a substrate, a first electrode, an organic emission layer, a second electrode, an insulating layer, and an auxiliary electrode. The substrate has at least one thin film transistor formed thereon.
Samsung Display Co., Ltd.


08/27/15
20150243715 

Organic light emitting display device


An organic light emitting display device includes: a display panel including data lines, scan lines, a first power voltage line supplying a first power voltage, and pixels, a pixel of the pixels including: a driving transistor configured to control a drain-to-source current flowing from a first electrode of the driving transistor to a second electrode of the driving transistor according to a voltage at a gate electrode of the driving transistor; an organic light emitting diode (oled) configured to emit light in accordance with the drain-to-source current; and a first transistor having a gate electrode coupled to a scan line of the scan lines, a first electrode coupled to the second electrode of the driving transistor, and a second electrode coupled to the gate electrode of the driving transistor, the first power voltage line being between the second electrode of the first transistor and an anode of the oled.. .
Samsung Display Co., Ltd.


08/27/15
20150243713 

Method for manufacturing organic el display and organic el display


A method for manufacturing an organic electroluminescence display including multilayer structures that are each formed in a respective one of pixel areas in an effective area of a substrate and are each formed by a lower electrode, an organic layer, and an upper electrode, the organic electroluminescence display having a common electrode that electrically connects the pixel areas, the method including the steps of: forming a protective electrode and an outer-peripheral electrode that are electrically connected to the common electrode; forming the multilayer structures; and carrying out film deposition treatment involving electrification of the substrate.. .
Sony Corporation


08/27/15
20150243710 

Organic optoelectronic component and operating the organic optoelectronic component


An organic optoelectronic component and a method for operating the organic optoelectronic component are disclosed. In an embodiment the organic optoelectronic component includes at least one organic light emitting element including an organic functional layer stack having at least one organic light emitting layer between two electrodes and at least one organic light detecting element including at least one organic light detecting layer, wherein the at least one organic light detecting element and the at least one organic light emitting element are laterally arranged on a common substrate..
Osram Oled Gmbh


08/27/15
20150243704 

Display device and manufacturing the same


A display device includes a substrate, a first electrode on the substrate, a pixel defining layer on the substrate, the pixel defining layer having an opening exposing the first electrode, a metal layer on the pixel defining layer, a light emission layer on the first electrode exposed by the opening, and a second electrode on the light emission layer in the opening. The metal layer contacts the second electrode..
Samsung Display Co., Ltd.


08/27/15
20150243701 

Cmos image sensors having a transfer gate electrode, and methods of fabricating cmos image sensors having a transfer gate electrode


Complementary metal-oxide-semiconductor (cmos) image sensors are provided. A cmos image sensor includes a substrate including a pixel array and a peripheral circuit region, a photodiode and a floating diffusion region in the pixel array of the substrate, a transfer gate insulating layer and a transfer gate electrode on the substrate between the photodiode and the floating diffusion region, and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region.
Samsung Electronics Co., Ltd.


08/27/15
20150243694 

Image sensors having deep trenches including negative charge material and methods of fabricating the same


Image sensors are provided including a substrate defining a plurality of pixel regions, the substrate having a first surface and a second surface opposite the first surface. The second surface of the substrate is configured to receive light incident thereon and the substrate defines a deep trench extending from the second surface of the substrate toward the first surface substrate and separating the plurality of pixel regions from each other.

08/27/15
20150243693 

Cmos image sensors including vertical transistor and methods of fabricating the same


Provided is a complementary metal-oxide-semiconductor (cmos) image sensor. The cmos image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region.
Samsung Electronics Co., Ltd.


08/27/15
20150243691 

Thin-film transistor array substrate and manufacturing method thereof


The present invention discloses a thin-film transistor array substrate and a manufacturing method thereof. The method includes steps of using a first multi-tone adjustment mask to form a gate electrode and a common electrode after depositing a first transparent conductive layer and a first metallic layer on a substrate; depositing a gate-insulating layer and a semiconductor layer and then using a first mask to retain a part of the semiconductor layer that is on a top of the gate electrode; depositing a second transparent conductive layer and a second metallic layer, and using a second multi-tone adjustment mask to form a source electrode, a drain electrode and a pixel electrode..
Shenzhen China Star Optoelectronics Technology Co. Ltd.


08/27/15
20150243690 

Method for making thin film transistor array


A method for making thin film transistor array includes following steps. A gate electrode is formed on a surface of the insulating substrate.
Hon Hai Precision Industry Co., Ltd.


08/27/15
20150243689 

Thin film transistor substrate and display using the same


The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same. A display includes a first thin film transistor including a poly crystalline semiconductor layer, a first gate electrode on the poly crystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor including a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer..
Lg Display Co., Ltd.


08/27/15
20150243688 

Thin film transistor substrate and display using the same


Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode..
Lg Display Co., Ltd.


08/27/15
20150243687 

Thin film transistor substrate and display using the same


Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed on the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed on the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer..
Lg Display Co., Ltd.


08/27/15
20150243686 

Thin film transistor substrate and display using the same


The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate. A thin film transistor substrate includes a substrate; a first thin film transistor disposed on the substrate, the first thin film transistor including a poly crystalline semiconductor layer, a first gate electrode over the poly crystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor disposed on the substrate, the second thin film transistor including a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed over the first gate electrode and the second gate electrode and under the oxide semiconductor layer..
Lg Display Co., Ltd.


08/27/15
20150243685 

Thin film transistor substrate and display using the same


Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer..
Lg Display Co., Ltd.


08/27/15
20150243684 

Display panel and display device


A display panel includes a tft substrate, an opposite substrate and a display layer. A tft of the tft substrate has a drain.
Innolux Corporation


08/27/15
20150243683 

Thin film transistor substrate and display using the same


Provided are a thin film transistor substrate and a display using the same. A display includes: a first thin film transistor, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer..
Lg Display Co., Ltd.


08/27/15
20150243682 

Thin film transistor and thin film transistor array


A thin film transistor based on carbon nanotubes comprises a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode.
Hon Hai Precision Industry Co., Ltd.


08/27/15
20150243681 

Array substrate and manufacturing the same, and display device


Disclosed is method of manufacturing an array substrate, including steps of: forming a thin film transistor on a substrate through a patterning process; and on the substrate on which the thin film transistor has been formed, forming an organic transparent insulation layer including a first via hole and a first transparent electrode layer disposed above the organic transparent insulation layer and including a second via hole through one patterning process, wherein the centers of the first via hole and the second via hole coincide with each other in a thickness direction of the substrate, and a projection of the first via hole on the substrate is within a projection of the second via hole on the substrate.. .
Boe Technology Group Co., Ltd.


08/27/15
20150243680 

Thin film transistor display panel and manufacturing the same


A thin film transistor array panel includes: a first gate line extending in a first direction; a second gate line extending in the first direction; a data line extending in a different second direction; a first common signal distribution line including a plurality of first branches connected to each other, wherein the first branches extend in the second direction and intersect under or over with the first gate line and the second gate line. The first branches are connected to receive an electrostatic offset voltage of polarity opposite to that of data line voltages supplied on the data line.
Samsung Display Co., Ltd.


08/27/15
20150243676 

Display device


A display device includes a first substrate including a display area and a non-display area, the display area including a pixel including a first electrode, a light emission layer, and a second electrode; a sealing member facing the first substrate; and a first conducting member in the display area, the first conducting member being coupled to the first electrode, where the sealing member includes: a first conductive layer coupled to the first conducting member; an insulating layer on the first conductive layer; and a second conductive layer on the insulating layer, the second conductive layer being coupled to the second electrode.. .
Samsung Display Co., Ltd.


08/27/15
20150243675 

Semiconductor memory device and fabricating the same


Provided are a semiconductor memory device and a fabricating method thereof. The device includes a stack including vertical channel structures that penetrate insulating patterns and gate electrodes that are alternately and repeatedly stacked on each other.

08/27/15
20150243670 

Nonvolatile semiconductor memory device having element isolating region of trench type


Disclosure is semiconductor device of a selective gate region, comprising a semiconductor layer, a first insulating film formed on the semiconductor layer, a first electrode layer formed on the first insulating layer, an element isolating region comprising an element isolating insulating film formed to extend through the first electrode layer and the first insulating film to reach an inner region of the semiconductor layer, the element isolating region isolating a element region and being self-aligned with the first electrode layer, a second insulating film formed on the first electrode layer and the element isolating region, an open portion exposing a surface of the first electrode layer being formed in the second insulating film, and a second electrode layer formed on the second insulating film and the exposed surface of the first electrode layer, the second electrode layer being electronically connected to the first electrode layer via the open portion.. .
Kabushiki Kaisha Toshiba


08/27/15
20150243662 

Low threshold voltage and inversion oxide thickness scaling for a high-k metal gate p-type mosfet


A semiconductor structure has a semiconductor substrate and an nfet and a pfet disposed upon the substrate. The pfet has a semiconductor sige channel region formed upon or within a surface of the semiconductor substrate and a gate dielectric having an oxide layer overlying the channel region and a high-k dielectric layer overlying the oxide layer.
International Business Machines Corporation


08/27/15
20150243661 

Semiconductor device and manufacturing semiconductor device


A semiconductor device includes: a first conductivity type transistor and a second conductivity type transistor, wherein each of the first conductivity type transistor and the second conductivity type includes a gate insulating film formed on a base, a metal gate electrode formed on the gate insulating film, and side wall spacers formed at side walls of the metal gate electrode, wherein the gate insulating film is made of a high dielectric constant material, and wherein offset spacers are formed between the side walls of the metal gate electrode and the inner walls of the side wall spacers in any one of the first conductivity type transistor and the second conductivity type transistor, or offset spacers having different thicknesses are formed in the first conductivity type transistor and the second conductivity type transistor.. .
Sony Corporation


08/27/15
20150243657 

Semiconductor device and semiconductor device package using the same


A semiconductor device includes an active layer, a source electrode, a drain electrode, a gate electrode, an interlayer dielectric, an inter-source layer, an inter-source plug, an inter-drain layer, an inter-drain plug, an inter-gate layer, and an inter-gate plug. The active layer is made of iii-v group semiconductors.
Delta Electronics, Inc.


08/27/15
20150243656 

Semiconductor device


According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode.. .
Kabushiki Kaisha Toshiba


08/27/15
20150243643 

3d ic with serial gate mos device, and making the 3d ic


A die stack comprises a first integrated circuit (ic) die having at least a first device comprising a first source, a first drain and a first gate electrode above a first channel region between the first source and the first drain. A second ic die has at least a second device comprising a second source, a second drain and a second gate electrode above a second channel region between the second source and the second drain.
Taiwan Semiconductor Manufacturing Co., Ltd.


08/27/15
20150243638 

Semiconductor device


According to one embodiment, a semiconductor device includes a semiconductor chip, a package that surrounds the semiconductor chip, a first electrode terminal of which an upper end portion is aligned with and exposed at an upper surface of the package or protrudes from the upper surface of the package on an upper side of the package, and of which a lower end portion is aligned with and exposed at a lower surface of the package, or protrudes from the lower surface of the package on a lower side of the package, and a second electrode terminal of which an upper end portion is aligned with and exposed at the upper surface of the package, or protrudes from the upper surface of the package on the upper side of the package, and of which a lower end portion is aligned with and exposed at the lower surface of the package or protrudes from the lower surface of the package on the lower side of the package.. .
Kabushiki Kaisha Toshiba


08/27/15
20150243623 

Semiconductor device grid array package


A grid array assembly is formed from an electrical insulating material with embedded solder deposits. A first portion of each of the solder deposits is exposed on a first surface of the insulating material and a second portion of each of the solder deposits is exposed on an opposite surface of the insulating material.

08/27/15
20150243612 

Chip parts and manufacturing the same, circuit assembly having the chip parts and electronic device


A chip part according to the present invention includes a substrate having a penetrating hole, a pair of electrodes formed on a front surface of the substrate and including one electrode overlapping the penetrating hole in a plan view and another electrode facing the one electrode, and an element formed on the front surface side of the substrate and electrically connected to the pair of electrodes.. .
Rohm Co., Ltd.


08/27/15
20150243607 

Method of manufacturing semiconductor package having magnetic shield unit


A method of manufacturing a semiconductor package having a magnetic shield function is provided. The method includes forming cracks in a lattice structure on an active surface in which electrode terminals are formed; grinding a back surface of a wafer facing the active surface, bonding a tape on the active surface of the wafer, expanding the tape such that the wafer on the tape is divided as semiconductor chips, forming a shield layer on surfaces of the semiconductor chips and the tape, cutting the shield layer between the semiconductor chips and individualizing as each of the semiconductor chips which has a first shield pattern formed on back surface and sides, bonding the semiconductor chips on a substrate, and forming a second shield pattern on each of the active surfaces of the semiconductor chips, wherein the semiconductor chips and the substrate are physically and electrically connected by a bonding wire..

08/27/15
20150243605 

Method for manufacturing semiconductor device


To improve the assemblability of a semiconductor device. When a memory chip is mounted over a logic chip, a recognition range including a recognition mark formed at a back surface of the logic chip is imaged and a shape of the recognition range is recognized, alignment of a plurality of bumps of the logic chip and a plurality of projection electrodes of the above-described memory chip is performed based on a result of the recognition, and the above-described memory chip is mounted over the logic chip.
Renesas Electronics Corporation


08/27/15
20150243590 

Embedded die redistribution layers for active device


Embedded die packages are described that employ one or more substrate redistribution layers (rdl) to route electrode nodes and/or for current redistribution. In one or more implementations, an integrated circuit die is embedded in a copper core substrate.
Maxim Integrated Products, Inc.


08/27/15
20150243567 

Electron radiation monitoring electrode system to prevent gold spitting and resist cross-linking during evaporation


An electrode system configured to be positioned within a vacuum chamber of an electron-beam metal evaporation and deposition apparatus including a metal slug from which metal is evaporated during operation of the electron-beam metal evaporation and deposition apparatus. The electrode system includes a substantially ring-shaped electrode formed of a conductive material and a plurality of insulating standoffs configured to support the substantially ring-shaped electrode in the vacuum chamber in a position substantially surrounding the metal slug..
Skyworks Solutions, Inc.


08/27/15
20150243562 

Semiconductor device and manufacturing method thereof


A semiconductor device is provided which includes an n-type semiconductor layer and a p-type semiconductor layer coexisting in the same wiring layer without influences on the properties of a semiconductor layer. The semiconductor device includes a first wiring layer with a first wiring, a second wiring layer with a second wiring, and first and second transistors provided in the first and second wiring layers.
Renesas Electronics Corporation


08/27/15
20150243524 

Method of processing target object and plasma processing apparatus


A method of processing a target object includes (a) exposing a resist mask to active species of hydrogen generated by exciting plasma of a hydrogen-containing gas within a processing vessel while the target object is mounted on a mounting table provided in the processing vessel; and (b) etching a hard mask layer by exciting plasma of an etchant gas within the processing vessel after the exposing of the resist mask to the active species of hydrogen. The plasma is excited by applying of a high frequency power for plasma excitation to an upper electrode.
Tokyo Electron Limited


08/27/15
20150243491 

Discharge lamp and light source device


A discharge lamp includes a housing including a dielectric portion having a light transmission area formed of a dielectric material and transmitting light, and a main body portion forming a discharge-gas-filled space together with the dielectric portion, the discharge-gas-filled space being filled with a discharge gas; an electron emission source disposed in the discharge-gas-filled space to face the light transmission area; a discharge path limiting member separating the electron emission source and the light transmission area, in the discharge-gas-filled space, and including an electron passage hole that transmits electrons emitted from the electron emission source; and an external electrode disposed at an outer side of the housing to face the electron emission source across the dielectric portion, and including an opening that passes the light transmitted through the light transmission area.. .
Hamamatsu Photonics K.k.


08/27/15
20150243487 

Compression member for use in showerhead electrode assembly


A compression member for use in a showerhead electrode assembly of a capacitively coupled plasma chamber. The member applies a compression force to a portion of a film heater adjacent a power supply boot on an upper surface of a thermal control plate and is located between the thermal control plate and a temperature-controlled top plate.
Lam Research Corporation


08/27/15
20150243486 

Plasma processing apparatus


In a plasma processing apparatus including an upper electrode arranged above a sample stage on which a sample to be processed in a processing chamber is mounted to supply an electric field, and a high frequency power supply to output first high frequency power to form the electric field to the upper electrode, an insulating layer has an impedance smaller than the impedance of the feeding path for bias or the feeding path for electrostatic chuck and a current of the first high frequency power flows through a circuit that passes through the conductive plate and a member constituting an inner sidewall surface of the processing chamber from the upper electrode via the top surface of the sample stage to return to the high frequency power supply.. .
Hitachi High-technologies Corporation


08/27/15
20150243483 

Tunable rf feed structure for plasma processing


A chamber for plasma processing semiconductor wafers is provided, comprising: a support chuck disposed in the chamber; a top electrode disposed over the support chuck and within the chamber; an rf supply rod electrically connected between an rf power source and the support chuck for providing rf power to the chamber, the rf supply rod having a corrugated surface, the corrugated surface having recessed and protruded regions that are arranged in a lengthwise repeating pattern along a segment of the rf supply rod, the corrugated surface producing a lengthwise minimum surface path along the segment that is greater than a length of the segment, the lengthwise minimum surface path defining a target length of the rf supply rod.. .
Lam Research Corporation


08/27/15
20150243453 

Electricity storage device and manufacturing same


An electricity storage device includes an electricity storage element formed by winding an electrode body of an anode or cathode side along with a separator, an electrode leading section having an inclined edge is formed on an element end-face of the electricity storage element by a part of the electrode body.. .
Nippon Chemi-con Corporation


08/27/15
20150243452 

Charge storage devices containing carbon nanotube films as electrodes and charge collectors


An energy storage device includes a nanostructured network and an electrolyte in contact with the nanostructured network. The nanostructured network is an electrically conducting nanostructured network that provides combined functions of an electrode and a charge collector of the energy storage device.
The Regents Of The University Of California


08/27/15
20150243451 

Method for preparing carbon nanofiber composite and carbon nanofiber composite prepared thereby


The present invention relates to a method for preparing a carbon nanofiber composite, and a carbon nanofiber composite prepared thereby. The method for preparing a carbon nanofiber composite provided by the present invention has reduced costs and is economical and efficient compared with a convention method for preparing a carbon nanofiber composite.
Daegu Gyeongbuk Institute Of Science And Technology


08/27/15
20150243449 

Lithium ion capacitor


Specifically provided is a lithium ion capacitor comprising, accommodated within an outer casing: an electrode stack obtained by stacking a negative electrode in which a negative-electrode active material layer including a carbon material as the negative-electrode active material is disposed on a negative-electrode collector, a separator comprising a polyethylene-containing polyolefin resin, and a positive electrode in which a positive-electrode active material layer including a positive-electrode active material layer comprising a carbon material or a carbonaceous material is disposed on a positive-electrode collector; and a non-aqueous electrolyte solution including a lithium ion-containing electrolyte.. .

08/27/15
20150243448 

Dye-sensitized solar cell element for low illuminance


The dye-sensitized solar cell element includes at least one dye-sensitized solar cell (dsc), a first current extracting portion and a second current extracting portion for extracting current from the at least one dsc. The dsc comprises a first electrode having a transparent substrate and a transparent conductive layer provided on the surface of the substrate, a second electrode facing the first electrode and having a metal substrate, an oxide semiconductor layer provided on the first electrode, and an annular sealing portion bonding the first electrode with the second electrode.
Fujikura Ltd.


08/27/15
20150243445 

Photoelectric conversion element and producing the same


To provide a photoelectric conversion element being excellent in photoelectric conversion efficiency and stability of photoelectric conversion function, a method for producing the photoelectric conversion element, and a solar cell using the photoelectric conversion element. A photoelectric conversion element having a substrate, a first electrode, a photoelectric conversion layer containing a semiconductor and a sensitizing pigment, a hole transport layer having a conductive polymer, and a second electrode, wherein the hole transport layer is formed by bringing the photoelectric conversion layer into contact with a solution containing a conductive polymer precursor and an oxidizer at a ratio of 0.1<[ox]/[m] (wherein [ox] is the molar concentration of the oxidizer; and [m] is the molar concentration of the conductive polymer precursor), and irradiating the photoelectric conversion layer with light..
Konica Minolta, Inc.


08/27/15
20150243444 

Bi- and tri- layer interfacial layers in perovskite material devices


Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The active layer may have perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof.
Hunt Energy Enterprises, L.l.c.


08/27/15
20150243443 

Photosemiconductor electrode, photoelectrochemical cell, and energy system


A photosemiconductor electrode (400) of the present invention includes a conductor (410) and a photosemiconductor layer (first semiconductor layer) (420) provided on the conductor (410). The photosemiconductor layer (420) includes a photosemiconductor (e.g., a photosemiconductor film (421)) and an oxide containing iridium element (e.g., iridium oxide (422)).
Panasonic Intellectual Property Management Co., Ltd.


08/27/15
20150243441 

Method for forming pattern


The invention provides a process and an apparatus for producing a high quality electronic component by reducing sagging at pattern side walls, which may occur when patterns of a wiring, an electrode, etc. Are printed by a screen printing process using an electroconductive paste, an insulation paste, or a semiconductor paste, and reducing a mesh mark on the patterns of a wiring, an electrode, etc., or a full solid surface film, as well as a pattern formation process, by which screen printing can be applied and double face printing can be conducted with the number of process steps less than a conventional process.
National Institute Of Advanced Industrial Science And Technology


08/27/15
20150243440 

Non-uniform dielectric layer capacitor for vibration and acoustics improvement


A non-uniform dielectric layer, multi-layer-ceramic-capacitor (mlcc) has upper and lower dielectric layers separating upper and lower electrode layers, where the lower dielectric layers have a greater vertical thickness than the upper dielectric layers to reduce piezoelectric effect driven capacitor reaction forces on a printed circuit board (pcb) on which the capacitor is mounted. Such an mlcc may include an upper set of dielectric layers that separate adjacent pairs of upper electrode layers in a top portion of the mlcc, and a lower set of dielectric layers that separate adjacent pairs of lower electrode layers in a bottom portion of the mlcc.
Apple Inc.


08/27/15
20150243439 

Multilayer ceramic electronic component and board having the same mounted thereon


A multilayer ceramic electronic component may include: a ceramic body including dielectric layers; an active layer configured to form capacitance by stacking internal electrodes alternately exposed to end surfaces of the ceramic body with the dielectric layers interposed therebetween; upper and lower cover layers formed on and below the active layer; and first and second external electrodes formed on end portions of the ceramic body. In a cross-section of the ceramic body in length-thickness direction, the external electrodes may include conductive layers formed at corner portions of the ceramic body, base electrodes covering the conductive layers, and terminal electrodes formed on the base electrodes, the conductive layers being positioned outside the active layer of the ceramic body..
Samsung Electro-mechanics Co., Ltd.


08/27/15
20150243438 

Multilayer ceramic capacitor and board having the same


A multilayer ceramic capacitor and a board having the same are provided. The multilayer ceramic capacitor includes three external electrodes including a conductive layer, a nickel plating layer, and a tin plating layer sequentially stacked on a mounting surface of the ceramic body, and spaced apart from each other.
Samsung Electro-mechanics Co., Ltd.


08/27/15
20150243437 

Bst capacitor


A capacitor having a capacitance settable by biasing, including: a series association of a plurality of first capacitive elements between two first terminals defining the capacitor electrodes; and two second terminals of application of bias voltages respectively connected, via resistive elements, to the opposite electrodes of each of the first capacitive elements.. .
Stmicroelectronics (tours) Sas


08/27/15
20150243412 

Chip component and production method therefor


A chip part according to the present invention includes a substrate having a front surface and a side surface, an electrode integrally formed on the front surface and the side surface so as to cover an edge portion of the front surface of the substrate, and an insulating film interposed between the electrode and the substrate. A circuit assembly according to the present invention includes the chip part according to the present invention and a mounting substrate having a land, bonded by solder to the electrode, on a mounting surface facing the front surface of the substrate..
Rohm Co., Ltd.


08/27/15
20150243255 

Liquid crystal display device, driving liquid crystal display device, and electronic apparatus


A liquid crystal display device is provided. The liquid crystal including an array of pixels each having a memory function; and a buffer to output a first voltage, wherein a second voltage is supplied to a counter electrode of a liquid crystal capacitor, and wherein each of the pixels supplies one of the first voltage and the second voltage to a pixel electrode of the liquid crystal capacitor according to a data value stored in the each of the pixels..
Japan Display Inc.


08/27/15
20150243241 

Liquid crystal display device


In a liquid crystal display (lcd) device having a touch panel function, power consumption is reduced in the standby state. The display section is divided into blocks each of which is formed of a plurality of display lines.
Japan Display Inc.


08/27/15
20150243240 

Liquid crystal display


A liquid crystal display device includes a plurality of pixels disposed on an insulation substrate in a horizontal direction, and including a thin film transistor region and a display area; and a reference voltage line extended along a center of the display area in a direction perpendicular to the horizontal direction. The display area includes a plurality of domains disposed in two rows, a domain in one of the two rows includes a high-gray subpixel area including a high-gray pixel electrode, and a domain in the other of the two rows includes a low-gray subpixel area including a low-gray pixel electrode.
Samsung Display Co., Lid.


08/27/15
20150243238 

Display device


There is provided a display device. The display device includes a display panel divided into a display region and a non-display region, with the display region having data lines, scan lines, and pixels connected to the data lines and the scan lines.
Samsung Display Co., Ltd.


08/27/15
20150243231 

Display device and electronic apparatus


Disclosed is a display device including a display element and a transistor configured to drive the display element. The transistor has a channel layer, a gate electrode laminated under the channel layer, and wiring connecting the gate electrode and a capacitance electrode together.
Sony Corporation




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Electrode topics: Phosphoric Acid, Internal Combustion Engine, Carbon Atoms, Porous Carbon, Double Layer Capacitor, Graphene Oxide, Aqueous Solution, Lithium Ion, Exhaust Gas, Soot Sensor, Combustion, Calibration, Electronic Apparatus, Electrical Signal, Electric Conversion

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