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This page is updated frequently with new Electrode-related patent applications.




 Discharge lamp driving device, projector, and discharge lamp driving method patent thumbnailnew patent Discharge lamp driving device, projector, and discharge lamp driving method
A discharge lamp driving device includes a discharge lamp driving unit; and a control unit, in which the control unit controls the discharge lamp driving unit so that a first driving current which causes a first electrode to serve as an anode and a second driving current which causes a second electrode to serve as an anode are alternately supplied to the discharge lamp, a period of the first driving current is changed according to a periodic first pattern, and a period of the second driving current is changed according to a periodic second pattern, in which the first pattern and the second pattern are patterns in which the length of the periods over which the respective driving current is supplied decrease over time within each cycle of the pattern, and in which the cycle of the first pattern is phase-shifted relative to the cycle of the second pattern.. .
Seiko Epson Corporation


 Multi-purpose eyewear article patent thumbnailnew patent Multi-purpose eyewear article
An eyewear article for performing viewing functions is provided. The viewing functions supported include viewing different types of 3d displays, emulating the pulfrich effect, and viewing a loaded 3d image sequence.
3nd Technology Limited


 Switch patent thumbnailnew patent Switch
A switch is envisaged in the present disclosure. The switch includes a plunger that has one of a push action and a slide action to actuate the switch.

 Semiconductor switch patent thumbnailnew patent Semiconductor switch
In an embodiment, semiconductor switch includes first switches switching conduction between input-output nodes and a common node. One of the first switches includes a plurality of first transistors connected in series between an input and output node and the common node.
Kabushiki Kaisha Toshiba


 Resonator element, resonator, resonator device, oscillator, electronic apparatus, and moving object patent thumbnailnew patent Resonator element, resonator, resonator device, oscillator, electronic apparatus, and moving object
A resonator element includes: a substrate which includes a first region performing thickness shear vibration, a second region located in a periphery of the first region and having a smaller thickness than the first region, a fixed end, and a free end opposite to the fixed end in the first region in a plan view; and excitation electrodes which are disposed on a front and a rear of the first region and have regions overlapping each other in the plan view. A center of the first region and a center of the regions overlapping each other are located between a center of the substrate and the free end in the plan view.
Seiko Epson Corporation


 Elastic wave device patent thumbnailnew patent Elastic wave device
An elastic wave device includes a multilayer film provided on a support substrate and including a piezoelectric thin film and a layer other than the piezoelectric thin film, an interdigital transducer electrode provided on one surface of the piezoelectric thin film, and an external connection terminal electrically connected to the interdigital transducer electrode. In a plan view, the multilayer film is partially absent or omitted in a region outside a region where the interdigital transducer electrode is provided, and the elastic wave device further includes a first insulating layer provided on the support substrate in at least a portion of a region where the multilayer film is absent or omitted..
Murata Manufacturing Co., Ltd.


 Laminated chip device patent thumbnailnew patent Laminated chip device
Provided is a laminated chip device including a first laminate in which a plurality of conductor patterns formed on a plurality of sheets are connected to each other through a via formed to penetrate at least a sheet, and a second laminate provided over or below the first laminate and having a plurality of internal electrode patterns formed on a plurality of sheets, and the internal electrode patterns have a non-conductive region in at least a portion of an area corresponding to the via.. .
Innochips Technology Co., Ltd.


 Converter for converting a variation in energy to be recovered into a potential difference patent thumbnailnew patent Converter for converting a variation in energy to be recovered into a potential difference
A converter including a first transducer that can lengthen inside at least a first deformation zone and simultaneously shrink inside at least a different second deformation zone. Inner faces of second and third electromechanical transducers are secured respectively, with no degree of freedom, substantially to the first and second deformation zones of the layer of the first transducer.
Institut Polytechnique De Grenoble


 Electric generating element and electric generator patent thumbnailnew patent Electric generating element and electric generator
To provide an electric generating element including a first electrode; an intermediate layer; and a second electrode, the first electrode, the intermediate layer, and the second electrode being disposed in this order, the intermediate layer being in contact with at least one of the first electrode and the second electrode, wherein the intermediate layer microscopically moves in a horizontal direction relative to a surface of the first electrode and a surface of the second electrode, when the intermediate layer is pressed in a vertical direction relative to the surface of the first electrode and the surface of the second electrode in a state that the intermediate layer is not secured with at least one of the first electrode and the second electrode.. .

 Apparatus for transmitting data and energy between two objects moving relative to one another patent thumbnailnew patent Apparatus for transmitting data and energy between two objects moving relative to one another
The invention relates to an apparatus for the transmission of data and energy between two objects moving relative to one another about a common axis of rotation. The objects each comprise coils which are disposed opposite and are spaced apart axially with respect to the axis of rotation such that an energy transmission between the coils is possible by inductive coupling.
Sick Ag


new patent

Spark plug


A spark plug having a tip provided on at least one of a center electrode and a ground electrode. The spark plug includes a center electrode and a ground electrode disposed providing a gap with the center electrode.
Ngk Spark Plug Co., Ltd.


new patent

Optical semiconductor device and manufacturing the same


A semiconductor light-emitting device according to one embodiment includes a substrate, a first light reflection structure provided in contact with the substrate, a buried layer surrounding the first light reflection structure, an optical semiconductor structure including an active layer, provided above the first light reflection structure, a second light reflection structure provided above the optical semiconductor structure, and a pair of electrodes which supply current to the optical semiconductor structure. The surface of the first light reflection structure and the surface of the buried layer are included in the same plane..
Kabushiki Kaisha Toshiba


new patent

Die for terminalized electric wire


A die for a terminalized electric wire is provided with a first electrode, a hole forming jig, an electric wire pressing jig which surrounds a periphery of the first electrode, a second electrode and conductor accommodation parts. The conductor accommodation parts are recessed in molded inner wall surfaces at both sides of the electric wire pressing jig which holds a superposed configuration part in which the end side is superposed on the root side of the annular conductor in the vertical direction.
Yazaki Corporation


new patent

Connection device and reception device


A connection device includes a rod-shaped electrode, a plurality of cylindrical electrodes through which the rod-shaped electrode passes, the plurality of cylindrical electrodes being sequentially exposed on a surface in order from a front end side of the rod-shaped electrode, an insulation section configured to insulate the rod-shaped electrode and the plurality of cylindrical electrodes from each other, and a plurality of connection terminals electrically connected to the rod-shaped electrode and the plurality of cylindrical electrodes in a vicinity of a rear end of the rod-shaped electrode, the plurality of connection terminals being protruded from a rear side.. .
Sony Corporation


new patent

Patch antenna


A surface-layer conductive plate having an opening is disposed on a first surface of a dielectric substrate. A radiation electrode is disposed inside the opening on the first surface of the dielectric substrate.
Murata Manufacturing Co., Ltd.


new patent

Electrochemical cell comprising an electrodeposited fuel


Provided is a rechargeable electrochemical cell system for generating electrical current using a fuel and an oxidant. The system includes a plurality of electrochemical cells.
Fluidic, Inc.


new patent

Nickel-zinc battery


Provided is a highly reliable nickel-zinc battery including a separator exhibiting hydroxide ion conductivity and water impermeability. The nickel-zinc battery includes a positive electrode containing nickel oxide and/or nickel oxyhydroxide; a positive-electrode electrolytic solution in which the positive electrode is immersed, the electrolytic solution containing an alkali metal hydroxide; a negative electrode containing zinc and/or zinc oxide; a negative-electrode electrolytic solution in which the negative electrode is immersed, the electrolytic solution containing an alkali metal hydroxide; a hermetic container accommodating the positive electrode, the positive-electrode electrolytic solution, the negative electrode, and the negative-electrode electrolytic solution; the separator exhibiting hydroxide ion conductivity and water impermeability and disposed in the hermetic container to separate a positive-electrode chamber accommodating the positive electrode and the electrolytic solution from a negative-electrode chamber accommodating the negative electrode and the electrolytic solution; and a porous substrate on a surface of the separator facing toward the positive electrode..
Ngk Insulators, Ltd.


new patent

Laminated secondary battery


A stacked secondary battery with having a positive electrode member and a negative electrode member. At least one of the positive electrode member and the negative electrode member is sandwiched between a pair of sheet-like separators.
Murata Manufacturing Co., Ltd.


new patent

Laminating method


The invention relates to a method for forming a monocell or a bi-cell for a lithium-ion electric energy accumulating device, wherein it is provided to first laminate, in a first laminating unit, a first arrangement comprising a first electrode and two separating elements, so as to obtain a multilayered laminated element. In the first arrangement, the electrode is interposed between the two separating elements without yet being laminated to either of the two separating elements.
Manz Italy S.r.l.


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new patent

Secondary battery and manufacturing the same


Provided is a secondary battery being superior to a conventional secondary battery with respect to volume (energy density) and manufacturing (manufacturing workload). The present invention provides a secondary battery including a sheet-shaped first-electrode-functioning base material having a function as a first electrode and a function as a base material, a front-side storage layer formed on a front side of the first-electrode-functioning base material, a front-side second electrode layer layered on the front-side storage layer, a rear-side storage layer formed on a rear side of the first-electrode-functioning base material, and a rear-side second electrode layer layered on the rear-side storage layer..
Guala Technology Co., Ltd.


new patent

Power storage device


A power storage device with reduced initial irreversible capacity is provided. The power storage device includes a positive electrode including a positive electrode current collector and a positive electrode active material layer, a negative electrode including a negative electrode current collector and a negative electrode active material layer, and an electrolyte solution.
Semiconductor Energy Laboratory Co., Ltd.


new patent

Nonaqueous electrolyte secondary battery


A nonaqueous electrolyte secondary battery includes a positive electrode, a negative electrode and an electrolyte solution, wherein the negative electrode includes a negative active material layer, the electrolyte solution contains fluoroethylene carbonate, and when a content (mg) of the fluoroethylene carbonate is denoted as x and a reaction area (m2) of the negative active material layer is denoted as y, x and y satisfy a relation of 10≦(x/y)≦100.. .
Gs Yuasa International Ltd.


new patent

Rechargeable electrochemical lithium cell with sulfur dioxide-containing electrolyte


The invention relates to a rechargeable, non-aqueous electrochemical battery cell which has a negative electrode, a positive electrode and a sulfur dioxide-containing electrolyte.. .
Fortu New Battery Technology Gmbh


new patent

Energy storage device


Provided is an energy storage device which includes an electrode assembly in which electrode plates are stacked; and a current collector connected to an end portion of the electrode assembly, wherein the end portion of the electrode assembly includes: an electrode plate welded portion at which the stacked electrode plates are welded to each other in a stacking direction and not joined to the current collector; and a current collector joined portion which is joined to the current collector and is arranged adjacently to the electrode plate welded portion in a current collector extending direction that intersects with the stacking direction.. .
Gs Yuasa International Ltd.


new patent

Hybrid-type secondary battery including electrodes having different output and capacity properties


Disclosed herein is a battery cell having an electrode assembly, including a positive electrode, a negative electrode, and a separator interposed between the positive electrode and the negative electrode, mounted in a receiving part of a battery case, wherein a positive electrode terminal and a negative electrode terminal protrude from at least one side of the electrode assembly, and an insulative material is provided between the electrode assembly and the battery case.. .
Lg Chem, Ltd.


new patent

Energy storage device


An energy storage device includes: an electrode assembly which includes: an approximately rectangular positive electrode; an approximately rectangular negative electrode which is stacked alternately with the positive electrode; and a strip-like elongated separator having a base material layer and an inorganic layer which is made to overlap with the first base material layer, wherein the elongated separator is arranged between the positive electrode and the negative electrode, and the base material layer of the elongated separator faces the negative electrode in an opposed manner between the positive electrode and the negative electrode.. .
Gs Yuasa International Ltd.


new patent

Laminating apparatus


There is described a laminating apparatus for coupling electrodes of non-rectangular shape with a separating film for the manufacture of electric energy accumulating devices, wherein a pair of laminating rollers has a roller driven by an elastic arrangement loaded with a variable force adjusted by an endless screw conveyor controlled by a brushless motor, during the passage of the electrodes, so as to vary the laminating force according to the width of the electrode laminated instant by instant, in order for the laminating pressure to remain almost constant. .
Manz Italy S.r.l.


new patent

Electrode assemblies including insulative portions


An electrode assembly for use in a battery may include a mandrel and one or more insulative portions. The insulative portions may be formed about and may extend from one or more end regions of a battery mandrel.
Medtronic, Inc.


new patent

Release film, laminate and manufacturing same, and manufacturing fuel cell


A release layer of a release film for producing a membrane electrode assembly of a polymer electrolyte fuel cell comprises a cyclic olefin polymer comprising an olefin unit having a c3-10alkyl group as a side chain thereof. The release layer may have a glass transition temperature of about 210 to 350° c.
Daicel Value Coating Ltd.


new patent

Point-of-use-activated microbattery and biocompatible electronic device incorporating the same


A biocompatible electronic device incorporating a point-of-use-activated microbattery, the biocompatible electronic device comprising: a housing; a sealed control electronics chamber formed within the housing; control electronics contained within the sealed control electronics chamber for controlling the operation of the biocompatible electronic device; a sealed electrode chamber formed within the housing; a plurality of electrodes contained within the sealed electrode chamber and connected to the control electronics; an access port formed within the housing for providing fluid access to the interior of the sealed electrode chamber; and a removable tab for selectively sealing the access port; such that, upon removal of the removable tab, a contacting fluid can contact the electrodes and act as an electrolyte for activating the microbattery, whereby to enable the microbattery to power the control electronics for the biocompatible electronic device.. .
Quantum Medical Innovations, Llc


new patent

Sheet for thin layer transfer, electrode catalyst layer-carrying sheet for thin layer transfer, producing sheet for thin layer transfer, and producing membrane electrode assembly


The present invention provides a sheet for thin layer transfer (10) including: a substrate (1) including a thin metal film or a thin heat-resistant resin film; and a fluorine resin layer (2) provided on at least one side of the substrate (1). The sheet for thin layer transfer thus provided can have reduced surface irregularities and be less prone to deteriorate even when subjected to repeated thermal transfer by thermocompression bonding..
Nitto Denko Corporation


new patent

Electrocatalyst layer, membrane electrode assembly and fuel cell


The electrocatalyst layer includes an electrocatalyst that is formed of a metal oxide obtained by thermally decomposing a metal organic compound. The metal element forming the electrocatalyst is preferably one selected from the group consisting of niobium, titanium, tantalum and zirconium..

new patent

Current collector, electrode structure, nonaqueous electrolyte battery, and electricity storage component


A manufacturing method for a current collector includes dispersing and agitating a fluorine-based resin and conductive particles for 5 to 60 minutes at 1000 to 5000 rpm, dispersing and agitating the fluorine-based resin and conductive particles for 10 to 120 minutes at 2000 to 7000 rpm. The resin layer includes a fluorine-based resin and conductive particles, has a thickness of 0.3 to 20 μm.
Uacj Foil Corporation


new patent

Negative electrode active material and producing the same


It is an object of an exemplary embodiment of the present invention to provide a negative electrode active material having excellent rate characteristics and cycle characteristics. One embodiment according to the present invention is a negative electrode active material comprising a carbon-containing composite, wherein, in the carbon-containing composite, an active material capable of intercalating and deintercalating lithium, conductive nanofibers and conductive carbon particles are coated with a carbon material and are integrated..
Nec Corporation


new patent

Method of manufacturing electrode slurry for lithium secondary battery, and electrode slurry


Slurry is prepared by dispersing a solvent containing fibrous carbon (carbon nanotube, vapor grown carbon fiber (vgcf (registered trademark))) by using a media-type disperser, and the slurry to be applied to a collector is obtained by kneading the prepared slurry and an electrode active material. As a media-type disperser, for example, a ball mill disperser or a bead mill disperser is used.
Fdk Corporation


new patent

Carbon material for negative electrode of non-aqueous secondary battery, negative electrode for non-aqueous secondary battery, and non-aqueous secondary battery


The present invention relates to a carbon material for negative electrodes of non-aqueous secondary batteries, the carbon material comprising: (1) a composite carbon particles (a) containing elemental silicon, and (2) amorphous composite graphite particles (b) in which graphite particles (c) and amorphous carbon are composited.. .

new patent

Energy storage device


An energy storage device includes a positive electrode, a negative electrode, and a nonaqueous electrolyte solution. The negative electrode includes an active material layer, and the active material layer has pores having a pore size of 0.1 μm or more and 1.0 μm or less, and a total volume of the pores is 0.26 cm3/g or more and 0.46 cm3/g or less..
Gs Yuasa International Ltd.


new patent

High capacity positive electrodes for use in lithium-ion electrochemical cells and methods of making same


Positive electrode for lithium-ion electrochemical cells are provided that have capacity retentions of greater than about 95% after 50 charge-discharge cycles when comparing the capacity after cycle 52 with the capacity after cycle 2 when cycled between 2.5 v and 4.7 v vs. Li/li+ at 30° c.
3m Innovative Properties Company


new patent

Spinel-type lithium metal composite oxide


Provided is a spinel-type lithium metal composite oxide that makes it possible to achieve excellent high-temperature storage characteristics when used as a positive electrode active material of a lithium battery. The spinel-type (fd-3m) lithium metal composite oxide is characterized by the oxygen occupancy (occ) thereof as determined by the rietveld method being 0.965-1.000, the lattice strain thereof as determined by the williamson-hall method being 0.015-0.090, and the ratio (na/mn) of the molar content of na to the molar content of mn satisfying 0.00<na/mn<1.00×10−2..
Mitsui Mining & Smelting Co., Ltd.


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new patent

Positive electrode active material for lithium ion secondary batteries, producing same and lithium ion secondary battery


An object of the present invention is to provide lithium ion secondary batteries having cycle characteristics as well as high energy density and rate characteristics during high-potential charging of a layered compound. The following is provided, a positive electrode active material for lithium ion secondary batteries, comprising particles each having: a core part comprising a lithium metal composite oxide; and a surface layer part comprising a lithium metal composite oxide having a composition differing from that in the core part, the surface layer part being formed on the surface of the core part, wherein both the core part and the surface layer part have a layered structure, the surface layer part contains ni, mn, and li, and ni/mn mole ratio in the surface is less than 1..
Hitachi Metals, Ltd.


new patent

Electrode, nonaqueous electrolyte battery, and battery pack


In general, according to one embodiment, there is provided an electrode. The electrode includes a current collector, a first electrode mixture layer formed on the current collector, and a second electrode mixture layer formed on the first electrode mixture layer.
Kabushiki Kaisha Toshiba


new patent

Electrode alloy powder, negative electrode for nickel-metal hydride storage batteries using the same, and nickel-metal hydride storage battery


Provided is an electrode alloy powder that is useful to obtain a nickel-metal hydride storage battery having a high battery capacity and a reduced self-discharge. The alloy powder is: a mixture including particles of a first hydrogen storage alloy having an ab5-type crystal structure, and particles of at least one second hydrogen storage alloy selected from the group consisting of a hydrogen storage alloy a having an ab2-type crystal structure and a hydrogen storage alloy b having an ab3-type crystal structure, wherein an amount of the first hydrogen storage alloy included in the mixture is greater than 50 mass %..
Panasonic Intellectual Property Management Co., Ltd.


new patent

Secondary graphite particle and secondary lithium battery comprising the same


The present disclosure relates to a secondary graphite particle comprising an initial natural graphite particle of excellent high capacity and output characteristic, aggregated, bonded or assembled with an initial artificial graphite particle of excellent cycle characteristic and swelling characteristic, thus having superior rollability that leads into increased density, a negative electrode using the secondary graphite particle as a negative electrode active material, and a secondary lithium battery comprising the negative electrode. Accordingly, the secondary lithium battery comprising the secondary graphite particle as described above as the negative electrode active material has an effect of enhanced high rate charging and discharging capability, cycle characteristic and swelling characteristic..
Lg Chem, Ltd.


new patent

Positive electrode for lithium-ion secondary battery and production process for the same, and lithium-ion secondary battery


A positive electrode for lithium-ion secondary battery is provided, the positive electrode being able to endure high-temperature and high-voltage driving modes or operations. At least parts of the surface of positive-electrode active-material particles are covered by a polymer coating layer, and an amino group and phosphoric-acid group are included in the polymer coating layer.
Kabushiki Kaisha Toyota Jidoshokki


new patent

Aluminum alloy foil for current collector of electrode, and manufacturing method thereof


An aluminum alloy foil for a current collector of an electrode is provided which has not only high electric conductivity but also high strength before and after a drying step, and is low in manufacturing cost. Provided is an aluminum alloy foil for a current collector of an electrode, containing 1.0 to 2.0 mass % (hereafter, simply referred to as “%”) of fe, 0.01 to 0.2% of si, 0.0001 to 0.2% of cu, and 0.005 to 0.3% of ti, the remainder being al and inevitable impurities, wherein an amount of fe contained as a solid solution is 300 ppm or more, and particles of intermetallic compounds having an equivalent circle diameter of 0.1 to 1.0 μm exist at 1.0×105 particles/mm2 or more..
Uacj Foil Corporation


new patent

Electrode, nonaqueous electrolyte battery, and battery pack


According to one embodiment, an electrode is provided. The electrode includes a current collector and an electrode layer formed on the current collector.
Kabushiki Kaisha Toshiba


new patent

Method of manufacturing anode for thermally activated reserve battery using thin metal foam and cup


Disclosed is a method of manufacturing an anode for a thermally activated reserve battery using a thin metal foam and a cup, which includes rolling a metal foam, coating the metal foam with a molten eutectic salt, impregnating the metal foam with lithium, and providing the metal foam with an electrode cup and a conductive separation membrane, and in which lithium having excellent capacity and output characteristics is employed in an anode for a thermal battery operating at high temperature.. .
Agency For Defense Development


new patent

Rechargeable battery having short-circuit member


A rechargeable battery including an electrode assembly including a first electrode and a second electrode; a case in which the electrode assembly is accommodated, the case including an opening; a first terminal electrically coupled to the first electrode; a second terminal electrically coupled to the second electrode; a cap plate coupled to the opening, the cap plate including a short-circuit hole and being electrically coupled to the first electrode; a short-circuit member in the short-circuit hole, the short-circuit member electrically coupling the cap plate and the second terminal when deformed; and an upper cover including a first barrier wall covering the short-circuit hole, the first barrier wall protruding toward the short-circuit member, the first barrier wall including a first exhaust hole, and a top surface of the upper cover including an external hole connected to the first exhaust hole.. .
Samsung Sdi Co., Ltd.


new patent

Rechargeable battery


A rechargeable battery includes an electrode assembly, a case accommodating the electrode assembly, a cap plate coupled to the case, an electrode terminal within a terminal hole of the cap plate, and a lead tab connecting the electrode assembly to the electrode terminal, wherein the electrode terminal includes a plate terminal located outside of the cap plate and having a through-hole corresponding to the terminal hole, a sub-terminal extending into the through-hole and coupled to the plate terminal, and a rivet terminal penetrating the terminal hole, the rivet terminal being connected to the lead tab and being compression-molded to the sub-terminal.. .
Samsung Sdi Co., Ltd.


new patent

Nonaqueous electrolyte secondary battery


A nonaqueous electrolyte secondary battery includes a fiber layer, which contains fiber composed of a synthetic resin, between a separator and a positive electrode and/or between the separator and a negative electrode. The fiber layer contains at least pvdf and ptfe as components of the synthetic resin configuring the fiber.
Toyota Jidosha Kabushiki Kaisha


new patent

Battery cell having means for preventing short-circuit


Disclosed herein is a battery cell configured such that an electrode assembly, including a positive electrode, a negative electrode, and a separator interposed between the positive electrode and the negative electrode, is mounted in a receiving part formed in a battery case, a positive electrode terminal and a negative electrode terminal protrude from at least one side of the electrode assembly, and an insulative material is provided between the electrode assembly and the battery case.. .
Lg Chem, Ltd.


new patent

Electrical connection of an oled device


Disclosed is a method for the production of an organic light emitting device of the oled type, the method including the following sequences of steps: a step of forming a stack of layers on a substrate; the stack including, successively and in the following order, a first electrode, an organic layer and a second electrode; a step of positioning a cover; a step of forming a connection pad. The method also includes: a step of fixing a first end of at least one elongated electrical connection member to an area of the connection pad covering a portion of the second face of the cover and a step of forming a layer of resist, the layer of resist being so configured as to preserve an electrical access to a second end of the elongated electrical connection member above the layer of resist..
Astron Fiamm Safety


new patent

Oled display device and preparation method thereof, display apparatus


An organic light emitting diode (oled) display device and a preparation method thereof, and a display apparatus are disclosed. The oled display device includes: a thin layer transistor (22), a first electrode (23′), a second electrode (26′) and an organic functional layer (25) located between the first electrode (23′) and the second electrode (26′).
Boe Technology Group Co., Ltd.


new patent

Opposed substrate of an oled array substrate and preparing the same, and display device


The present relates to the field of display technologies and discloses an opposed substrate of an oled array substrate and a method for preparing the same, and a display device. In the embodiments of the invention, the layer structure of the opposed substrate of an oled array substrate can be simplified, and the preparation difficulty of the opposed substrate can be lowered, thereby the yield rate of the opposed substrate can be improved.
Boe Technology Group Co., Ltd.


new patent

Photoelectric conversion device and manufacturing method thereof


A photoelectric conversion device of an embodiment includes: a first photoelectric conversion part including a first transparent electrode, a first organic active layer, and a first counter electrode; and a second photoelectric conversion part including a second transparent electrode, a second organic active layer, and a second counter electrode, which are provided on a transparent substrate. A conductive layer is formed on a partial region, of the second transparent electrode, which is adjacent to the first transparent electrode.
Kabushiki Kaisha Toshiba


new patent

Dye-sensitized solar cell


A dye-sensitized solar cell, which contains: a transparent electroconductive film substrate; a first electrode provided with a layer of an electron-transporting compound, which is composed of nano particles each coated with a sensitizing dye; a charge transfer layer; a hole transport layer; and a second electrode, wherein the first electrode, the charge transfer layer, the hole transport layer, and the second electrode are provided in this order on the transparent electroconductive film substrate, and wherein the charge transfer layer contains a metal complex salt, and the hole transport layer contains a polymer.. .
Ricoh Company, Ltd.


new patent

Photoelectric conversion element and manufacturing the same


According to one embodiment, a photoelectric conversion element includes a first electrode, a second electrode, a photoelectric conversion layer, and a first layer. The second electrode includes a base member and a first material portion.
Kabushiki Kaisha Toshiba


new patent

Thin film transistor and its manufacturing method, array substrate, and display device


A thin film transistor and its manufacturing method, an array substrate and a display device are disclosed, the thin film transistor is of a gate bottom contact type, and includes a gate electrode (3) and a gate insulation layer (2), the gate insulation layer (2) is provided with a recess (4) at a position corresponding to the gate electrode (3). With the thin film transistor, the problem of wire breakage in the active layer at the channel between the source/drain electrodes can be avoided, the performance and stability of the thin film transistor is improved, and the production cost is lowered down..
Boe Technology Group Co., Ltd.


new patent

Organic light emitting device and display device having the same


An organic light emitting device includes a first electrode, a hole transport region provided on the first electrode, an emission layer provided on the hole transport region, an electron transport region provided on the emission layer, and a second electrode provided on the electron transport region. The electron transport region includes an electron transport layer provided on the emission layer, a first mixed electron transport layer provided on the electron transport layer, and a second mixed electron transport layer provided on the first mixed electron transport layer.
Samsung Display Co., Ltd.


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new patent

Heterocyclic compound and organic light emitting device using the same


The present specification provides a heterocyclic compound, and an organic light emitting device including: a first electrode, a second electrode, and organic material layers formed of one or more layers including a light emitting layer disposed between the first electrode and the second electrode, in which one or more layers of the organic material layers include the heterocyclic compound or a compound in which a heat-curable or photo-curable functional group is introduced into the heterocyclic compound.. .
Lg Chem, Ltd.


new patent

Compound for organic electric element, organic electric element comprising the same and electronic device thereof


Provided are a compound of formula 1 and an organic electric element including a first electrode, a second electrode, and an organic material layer between the first and the second electrodes, where the organic material layer contains the compound of formula 1 and improves luminous efficiency, stability, and life span of the element.. .
Samsung Display Co., Ltd.


new patent

Porous siox materials for improvement in siox switching device performances


A porous memory device, such as a memory or a switch, may provide a top and bottom electrodes with a memory material layer (e.g. Siox) positioned between the electrodes.
William Marsh Rice University


new patent

Memory cell structures


The present disclosure includes memory cell structures and method of forming the same. One such memory cell includes a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode, a second electrode, including an electrode contact portion of the second electrode, having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode, wherein the second electrode is over the first electrode, and a storage element between the first electrode and the electrode contact portion of the second electrode..
Micron Technology, Inc.


new patent

Resistive random access memory (rram) cell with a composite capping layer


A resistive random access memory (rram) cell with a composite capping layer is provided. A tantalum oxide based layer is arranged over a bottom electrode layer.
Taiwan Semiconductor Manufacturing Co., Ltd.


new patent

Graphene-inserted phase change memory device and fabricating the same


Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer.
The Board Of Trustees Of The Leland Stanford Junior University


new patent

Bottom electrode for magnetic memory to increase tmr and thermal budget


Magnetic tunnel junction (mtj) storage unit of a memory cell and method of forming thereof are disclosed. The method includes forming a composite bottom electrode on a substrate.
Globalfoundries Singapore Pte. Ltd.


new patent

Method of forming an on-pitch self-aligned hard mask for contact to a tunnel junction using ion beam etching


A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction.
Crocus Technology


new patent

Stt-mram design enhanced by switching current induced magnetic field


A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (mtj) structure and an elongated second electrode aligned with the elongated first electrode coupled to the mtj structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the mtj.
Qualcomm Incorporated


new patent

Magnetoresistive random access memory devices and methods of manufacturing the same


In a method of manufacturing an mram device, a lower electrode, a first pinning layer pattern, a tunnel barrier layer pattern and a free layer pattern sequentially stacked on a substrate may be formed. A first insulating interlayer may be formed on the substrate to cover the lower electrode, the first pinning layer pattern, the tunnel barrier layer pattern and the free layer pattern.

new patent

Magnetic memory element and magnetic memory


According to one embodiment, a magnetic memory element includes a first magnetic layer, a second magnetic layer, a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, an electrode disposed on a side surface of the first magnetic layer, and a first insulation layer disposed between the first magnetic layer and the electrode, and including a first region with a first film thickness and a second region with a second film thickness which is less than the first film thickness.. .
Kabushiki Kaisha Toshiba


new patent

Electronic device


An electronic device includes a sealing plate including a first surface connected to a pressure chamber formation substrate, and a second surface having a drive ic provided thereon. The sealing plate includes a first region in which a plurality of individual connection terminals are arranged, and a second region in a position different from the first region.
Seiko Epson Corporation


new patent

Method of manufacturing light emitting device with exposed wire end portions


A light emitting device is constituted with a semiconductor light emitting element on which a support member is disposed on one surface provided with a p-side electrode and an n-side electrode and a fluorescent material layer is disposed on the other surface which is an opposite side of the one surface. The support member includes a resin layer, an electrode for p-side external connection and an electrode for n-side external connection disposed exposed at a surface opposite side of a surface where the resin layer is in touch with a light emitting element, and internal wirings disposed in the resin layer and electrically connecting between a p-side electrode and the electrode for p-side external connection respectively.
Nichia Corporation


new patent

Light emitting device and manufacturing method thereof


A light emitting device includes a first light transmissive supportive substrate having a first light transmissive insulator and a conductive circuitry layer provided on a surface of the first light transmissive insulator, a second light transmissive supportive substrate having a second light transmissive insulator and disposed in such a way that a surface of the second light transmissive insulator faces the conductive circuitry layer and so as to have a predetermined gap from the first light transmissive supportive substrate, a light emitting diode having a main body, and first and second electrodes provided on a surface of the main body and electrically connected to the conductive circuitry layer via a conductive bump, and laid out between the first and second light transmissive supportive substrates, and a third light transmissive insulator embedded in a space between the first light transmissive supportive substrate and the second light transmissive supportive substrate.. .
Toshiba Hokuto Electronics Corporation


new patent

Light emitting diode structure and manufacturing the same


An edge lighting light emitting diode (led) structure and a method of manufacturing the same are provided. The edge lighting led structure includes a substrate, an electrode pattern, a chip, an encapsulation layer and a fluorescent layer.
Genesis Photonics Inc.


new patent

Light emitting diode package structure and manufacturing method thereof


A light emitting diode package structure and a manufacturing method thereof are disclosed. The light emitting diode package structure includes a carrier substrate, a electrostatic protection component, and a light-emitting diode (led).
Genesis Photonics Inc.


new patent

Light emitting diodes with current injection enhancement from the periphery


A light emitting diode (led) assembly with current injection enhancement from the periphery of the led is disclosed. In one embodiment, the led assembly includes an led comprising a light emitting layer disposed between a first layer having a first conductivity type and a second layer having a second conductivity type.
Toshiba Corporation


new patent

Semiconductor light-emitting element


A semiconductor light-emitting element includes a substrate having a convex portion protruding therefrom. A first semiconductor layer having a first conductivity type is separated from the substrate in a first direction.
Kabushiki Kaisha Toshiba


new patent

Semiconductor light-emitting element


A semiconductor light-emitting element includes a first layer having a first conductivity. A second layer having a second conductivity is provided between the first layer and a substrate.
Kabushiki Kaisha Toshiba


new patent

Light emitting diodes with current spreading material over perimetric sidewalls


A vertical light emitting diode (led) assembly with current spreading material over one or more sidewalls of the led is disclosed. In one embodiment, the vertical led assembly includes an led comprising a light emitting layer disposed between a first layer having a first conductivity type and a second layer have a second conductivity type.
Toshiba Corporation


new patent

Light emitting device package and manufacturing method therof


A light emitting device (led) package and a manufacturing method thereof are provided. The led package includes an led including a first electrode pad and a second electrode pad disposed on one surface thereof; a bonding insulating pattern layer configured to expose the first electrode pad and the second electrode pad; a substrate including a via hole bored from a first surface to a second surface and a wiring metal layer formed on an inner surface of the via hole to extend to a part of the second surface; and a bonding metal pattern layer bonded to the wiring metal layer exposed through the via hole at the first surface of the substrate and also bonded to the first electrode pad and the second electrode pad..
Samsung Electronics Co., Ltd.


new patent

Semiconductor light emitting element, manufacturing same, and light emitting device


According to one embodiment, semiconductor light emitting element includes: a substrate having a first surface and a second surface on an opposite side of the first surface; an insulating layer provided on the second surface of the substrate; a first metal layer provided on the insulating layer; a semiconductor light emitting unit provided on the first metal layer, the semiconductor light emitting unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the second semiconductor layer being electrically connected to the first metal layer; and a first electrode layer provided on the first surface of the substrate, the first electrode layer extending in the substrate and in the insulating layer, and the first electrode layer being electrically connected to the first metal layer.. .
Kabushiki Kaisha Toshiba


new patent

Insulated-gate photoconductive semiconductor switch


This present invention provides a novel photoconductive semiconductor switch (pcss) comprising: a semi-insulating substrate, an anode formed on the upper surface of said semi-insulating substrate, a first n-type doped layer formed on the lower surface of said semi-insulating substrate, a p-type doped layer formed on said first n-type doped layer, a second n-type doped layer formed on said p-type doped layer, a cathode formed on said second n-type doped layer, several recesses facing towards said first n-type doped layer and vertically extending into a part of said first n-type doped layer, an insulating layer formed on said second n-type doped layer and on the walls and the bottoms of said recesses, a gate electrode consisting of two parts, one part of the which formed on said insulating layer on the walls and the bottoms of recesses, and the other part of the which formed on a part of the insulating layer on the second n-type doped layer for electrically connecting the part of the gate electrode on the recesses, wherein the cathode and the gate electrode are electrically isolated.. .
The Board Of Trustees Of The University Of Illinois


new patent

Semiconductor photoreceiving device


According to one embodiment, a semiconductor photoreceiving device includes a substrate, a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically, a semiconductor layer provided on the first structural layer and including an optical absorption layer, a reflective layer provided on the semiconductor layer, and a pair of electrodes configured to apply voltage to the optical absorption layer.. .
Kabushiki Kaisha Toshiba


new patent

Solar cell


Disclosed is a solar cell including a semiconductor substrate, a first conductive area disposed on one surface of the semiconductor substrate, the first conductive area being of a first conductive type, a second conductive area of a second conductive type opposite to the first conductive type, a first electrode connected to the first conductive area, and a second electrode connected to the second conductive area. At least one of the first conductive area and the second conductive area is formed of a metal compound layer..
Lg Electronics Inc.


new patent

Semiconductor device


According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region. The first semiconductor region is provided between the first and second electrodes.
Kabushiki Kaisha Toshiba


new patent

Semiconductor device and manufacturing method thereof


A semiconductor device includes a sic substrate having first and second surfaces, p-type first sic areas on the first surface of the sic substrate, an n-type second sic area between the first sic areas and the second surface, a third sic area having an n-type dopant concentration higher than that of the second sic area, on the second surface of the sic substrate, a first electrode on the first surface and electrically connected to the first sic areas, and a second electrode on the second surface and electrically connected to the third sic area. Where the area between the first sic areas and the second surface is a first area, and the area between a portion between adjacent first sic areas and the second surface is set as a second area, a z1/2 level density of the first area is higher than that of the second area..
Kabushiki Kaisha Toshiba


new patent

Nonvolatile semiconductor memory device


A nonvolatile semiconductor memory device includes a charge storage layer on a first insulating film, a second insulating film which is provided on the charge storage layer, formed of layers, and a control gate electrode on the second insulating film. The second insulating film includes a bottom layer (a) provided just above the charge storage layer, a top layer (c) provided just below the control gate electrode, and a middle layer (b) provided between the bottom layer (a) and the top layer (c).
Kabushiki Kaisha Toshiba


new patent

Semiconductor device and manufacturing method thereof


An object is to achieve high electrical characteristics (a high on-state current value, an excellent s value, and the like) and a highly reliable semiconductor device. A high on-state current value is achieved, whereby a further reduction in channel width (w) is achieved.
Semiconductor Energy Laboratory Co., Ltd.


new patent

Semiconductor device and manufacturing method thereof


An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode 304, a gate insulating film 306 formed over the gate electrode, an oxide semiconductor film 308 over the gate insulating film, and a source electrode 310a and a drain electrode 310b formed over the oxide semiconductor film.
Sharp Kabushiki Kaisha


new patent

Semiconductor device, manufacturing the same, or display device including the same


To suppress a change in electrical characteristics and improve reliability in a transistor including an oxide semiconductor film. Provided is a semiconductor device including a transistor including a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film as a second gate electrode over the second insulating film, and a third insulating film over the second oxide semiconductor film.
Semiconductor Energy Laboratory Co., Ltd.


new patent

Non-planar semiconductor device having hybrid geometry-based active region


Non-planar semiconductor devices having hybrid geometry-based active regions are described. For example, a semiconductor device includes a hybrid channel region including a nanowire portion disposed above an omega-fet portion disposed above a fin-fet portion.
Intel Corporation


new patent

Method and structure of making enhanced utbb fdsoi devices


An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of semiconductor material, and a second layer of semiconductor material on the layer of dielectric material. An extended channel region of a transistor is positioned in the second layer of semiconductor material, interacting with a top surface, side surfaces, and potentially portions of a bottom surface of the second layer of semiconductor material.
Stmicroelectronics (crolles 2) Sas


new patent

Method and structure of making enhanced utbb fdsoi devices


An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of semiconductor material, and a second layer of semiconductor material on the layer of dielectric material. An extended channel region of a transistor is positioned in the second layer of semiconductor material, interacting with a top surface, side surfaces, and potentially portions of a bottom surface of the second layer of semiconductor material.
Stmicroelectronics (crolles 2) Sas


new patent

Ldmos device and fabrication method thereof


The disclosed subject matter provides an ldmos device and fabrication method thereof. In an ldmos device, a drift region and a body region are formed in a substrate.
Semiconductor Manufacturing International (shanghai) Corporation


new patent

Semiconductor device


A semiconductor device according to an embodiment includes a first active region and a second active region. The first active region includes a n-type first source region at a first surface of the sic substrate having the first surface and a second surface, a n-type first drain region, a first gate insulating film, a first gate electrode, a p-type second source region at the first surface and electrically connected to the first source region, a p-type second drain region, a second gate insulating film, and a second gate electrode electrically connected to the first gate electrode.
Kabushiki Kaisha Toshiba


new patent

Semiconductor device


According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a first electrode, a first insulating layer, and a second electrode. The first semiconductor region includes a first region and a second region.
Kabushiki Kaisha Toshiba


new patent

Electrical conduction element, electronic device, and operating electrical conduction element


A nonvolatile three-terminal element is provided that operates by controlling a bandgap in an electron state of a graphene-based material. An ion conductor (5) having hydrogen ion or oxygen ion conductivity is provided between graphene oxide or graphene (hereinafter, referred to as go) (6), and a gate electrode (1).
National Institute For Materials Science


new patent

Semiconductor device


A semiconductor device includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type adjacent to the first semiconductor region in a first direction. A third semiconductor region of the first conductivity type is disposed on the second semiconductor region and separated from the first semiconductor region in the first direction by the second semiconductor region.
Kabushiki Kaisha Toshiba


new patent

Semiconductor device


A semiconductor device according to an embodiment includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate includes an element region and a termination region provided around the element region.
Kabushiki Kaisha Toshiba


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new patent

Semiconductor device


According to one embodiment, a semiconductor device includes: a first semiconductor region; a second semiconductor region on the first semiconductor region; a third semiconductor region on the second semiconductor region; an fourth insulating film on the second semiconductor region and the third semiconductor region; a first electrode under the first semiconductor region; a second electrode on the fourth insulating film; a plurality of first contact regions extending in a first direction from the first electrode toward the second electrode in the fourth insulating film, and the plurality of first contact regions electrically connecting the third semiconductor region to the second electrode; a plurality of second contact regions extending in the first direction in the fourth insulating film, and one of the plurality of second contact regions between adjacent ones of the first contact regions; and a third electrode in the second semiconductor region via a first insulating film.. .
Kabushiki Kaisha Toshiba


new patent

Semiconductor device


A semiconductor device according to an embodiment includes a cell region, a gate connection region, and a cell end region between the cell region and the gate connection region. The cell region includes, an n-type first sic region, a p-type second sic region, a n-type third sic region, a p-type fourth sic region, a gate insulating film, a gate electrode, a first electrode contacting with the first and fourth sic regions, a second electrode.
Kabushiki Kaisha Toshiba


new patent

Semiconductor device and manufacturing the same


A semiconductor device according to an embodiment includes a first-conductivity-type sic substrate, a first-conductivity-type sic layer provided on the sic substrate, having a first surface, and having a lower first-conductivity-type impurity concentration than the sic substrate, first second-conductivity-type sic regions provided in the first surface of the sic layer, second second-conductivity-type sic regions provided in the first sic regions and having a higher second-conductivity-type impurity concentration than the first sic region, silicide layers provided on the second sic regions and having a second surface, a difference between a distance from the sic substrate to the second surface and a distance from the sic substrate to the first surface being equal to or less than 0.2 μm, a first electrode provided to contact with the sic layer and the silicide layers, and a second electrode provided to contact with the sic substrate.. .
Kabushiki Kaisha Toshiba


new patent

Semiconductor device


A semiconductor device includes an sic substrate including a first surface and a second surface, the sic substrate having a first sic region of a first conductivity type at the first surface, and a second sic region of a second conductivity type between the first sic region and the second surface, an insulating film on the first surface around an element region of the semiconductor device and in contact with the first sic region, a first electrode on the insulating film and comprising a contact electrically connected to the first sic region, and a second electrode in contact with the second surface. A first conductivity type impurity concentration of the first sic region that is directly under a center portion of the contact is greater than a first conductivity type impurity concentration of the first sic region that is directly under a peripheral portion of the contact..
Kabushiki Kaisha Toshiba


new patent

Wire-last gate-all-around nanowire fet


A nanowire field effect transistor (fet) device includes a first source/drain region and a second source/drain region. Each of the first and second source/drain regions are formed on an upper surface of a bulk semiconductor substrate.
International Business Machines Corporation


new patent

High-voltage transistor device


A semiconductor device is provided including a substrate, a buried oxide layer formed over the substrate, a semiconductor layer formed over the buried oxide layer, and a transistor device including a gate electrode, a gate insulation layer and a channel region, wherein the gate insulation layer comprises a part of the buried oxide layer.. .
Globalfoundries Inc.


new patent

Semiconductor device


A semiconductor device according to an embodiment includes a first semiconductor layer of a first conductivity type, second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, a gate electrode, an insulating layer, and a first electrode. The first semiconductor layer includes first semiconductor regions.
Kabushiki Kaisha Toshiba


new patent

Mim capacitor and ming the same


A package includes an inorganic dielectric layer, and a capacitor. The capacitor includes a bottom electrode having a top surface in contact with a top surface of the inorganic dielectric layer, an insulator over the bottom electrode, and a top electrode over the insulator.
Taiwan Semiconductor Manufacturing Company, Ltd.


new patent

Light-emitting device and electronic apparatus


A light-emitting device includes a drive transistor for controlling the quantity of current supplied to a light-emitting element, a capacitor element electrically connected to a gate electrode of the drive transistor, and an electrical continuity portion for electrically connecting the drive transistor and the light-emitting element, these elements being disposed on a substrate. The electrical continuity portion is disposed on the side opposite to the capacitor element with the drive transistor disposed therebetween..
Seiko Epson Corporation


new patent

Organic electroluminescence display device


Provided is an organic electroluminescence display device. The organic electroluminescence display device includes a bank that is provided so as to surround a central portion of a pixel electrode, an organic electroluminescence layer that is provided on the pixel electrode, a common electrode that is formed so as to extend from the organic electroluminescence layer to the bank, a color filter layer that overlaps the organic electro luminescence layer, a black matrix layer that overlaps the bank, a spacer that is provided on the black matrix layer, and a wiring that is provided on the black matrix layer so as to be placed on the spacer.
Japan Display Inc.


new patent

Solar cell module


A solar cell module according to an embodiment includes: a light transmissive first substrate; a second substrate; at least one cell array disposed between the first substrate and the second substrate, the cell array including a plurality of cells arranged, each of the cells including a first electrode disposed on the first substrate, an organic photoelectric conversion film disposed on the first electrode, and a second electrode disposed on the organic photoelectric conversion film; a plurality of light transmissive partition walls disposed at portions on the first substrate, the portions being located between adjacent ones of the cells and at both end portions of the cell array; and a first resin film disposed between the second substrate and each of the cells between adjacent ones of the partition walls, the cells being connected in series.. .
Kabushiki Kaisha Toshiba


new patent

Addressable siox memory array with incorporated diodes


Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of siox, sioxny, sioxnyh, sioxcz, sioxczh, and combinations thereof, wherein each of x, y and z are equal or greater than 1 or equal or less than 2.
Nanyang Technological University


new patent

Memory device


According to one embodiment, a memory device includes a first layer, a second layers, a third layer provided between the first layer and the second layer, and first electrodes. The first layer includes first interconnections and a first insulating portion provided between the first interconnections.
Kabushiki Kaisha Toshiba


new patent

Resistive random access memory (rram) structure


A resistive random access memory (rram) cell comprises a transistor having a gate and a source/drain region, a bottom electrode coplanar with the gate, a resistive material layer over the bottom electrode, a top electrode over the resistive material layer, and a conductive material electrically connecting the bottom electrode to the source/drain region.. .
Taiwan Semiconductor Manufacturing Company, Ltd.


new patent

High thermal budget magnetic memory


Semiconductor devices and methods for forming a semiconductor device are disclosed. The method includes forming a storage unit of a magnetic memory cell.
Globalfoundries Singapore Pte. Ltd.


new patent

Photodetector


According to an embodiment, a photodetector includes a photodetecting element and first electrodes. In the photodetecting element, a plurality of pixel regions including a plurality of photodetection portions that detects light are arrayed on a first plane on which the light is incident.
Kabushiki Kaisha Toshiba


new patent

Solid-state imaging device and manufacturing method thereof


A solid-state imaging device includes a p-well, a gate insulating film, a gate electrode, a p+-type pinning layer that is located in the p-well so as to be outside the gate electrode and start from a first end portion of the gate electrode, a p−-type impurity region that is located in the p-well so as to extend under the gate electrode from a first end portion side and be in contact with the pinning layer, an n−-type impurity region that is located in the p-well so as to extend under the pinning layer and the p−-type impurity region and be in contact with the p−-type impurity region and the gate insulating film, and an n+-type impurity region that is located in the p-well and includes a portion that is under a second end portion of the gate electrode.. .
Seiko Epson Corporation


new patent

Solid-state imaging device and manufacturing method thereof


A solid-state imaging device includes a p-well, a gate insulating film, a gate electrode, a p+-type pinning layer that is located in the p-well so as to be outside the gate electrode and start from a first end portion of the gate electrode, a p−-type impurity region that is located in the p-well so as to extend under the gate electrode from a first end portion side and be in contact with the pinning layer, an n−-type impurity region that is in contact with the p−-type impurity region and the gate insulating film, and an n−−-type impurity region that surrounds at least a portion of the n−-type impurity region in plan view.. .
Seiko Epson Corporation


new patent

Solid-state imaging device and manufacturing method thereof


A solid-state imaging device includes a p-well, a gate insulating film, a gate electrode, a p+-type pinning layer that is located in the p-well so as to be outside the gate electrode and start from a first end portion of the gate electrode, a p−-type impurity region that is located in the p-well so as to extend under the gate electrode from a first end portion side and be in contact with the pinning layer, an n−-type impurity region that is located in the semiconductor layer under the p−-type impurity region and includes a portion that is under the pinning layer, and an n−-type impurity region that is in contact with the gate insulating film and the p−-type impurity region and is located so as to surround the n−-type impurity region in plan view.. .
Seiko Epson Corporation


new patent

Semiconductor device and manufacturing the same


A semiconductor device including a semiconductor substrate having oppositely facing first and second surfaces, the first surface being an active surface and provided with an electronic element thereon, a pad electrode to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening formed to reach the pad electrode from a bottom surface of the first opening and having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.. .
Sony Corporation


new patent

Photosensitive capacitor pixel for image sensor


An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network.
Omnivision Technologies, Inc.


new patent

Array substrate, manufacturing method thereof and display device


A method for manufacturing an array substrate, comprising forming a pattern of a gate electrode by one pattering process; forming a gate insulating layer on a substrate provided with the pattern of the gate electrode; forming first and second patterns thereon, in which the first pattern corresponds to a pattern of a semiconductor active layer and the second pattern corresponds to a source electrode and a drain electrode; forming a pattern layer including an opening area on the substrate provided with the second pattern, in which the opening area corresponds to a gap between the source electrode and the drain electrode, the minimum width thereof being greater than the width of the gap between the source electrode and the drain electrode, and at least forming a pattern of the source electrode and the drain electrode and a pixel electrode electrically connected with the drain electrode through the opening area.. .
Boe Technology Group Co., Ltd.


new patent

Array substrate, fabricating the same, and display device


An array substrate, a method for fabricating the same, and a display device are provided. A metal shielding layer is electrically connected with a common electrode.
Ordos Yuansheng Optoelecronics Co., Ltd.


new patent

Array substrate and manufacturing the same, and display device


Disclosed is method of manufacturing an array substrate, including steps of: forming a thin film transistor on a substrate through a patterning process; and on the substrate on which the thin film transistor has been formed, forming an organic transparent insulation layer including a first via hole and a first transparent electrode layer disposed above the organic transparent insulation layer and including a second via hole through one patterning process, wherein the centers of the first via hole and the second via hole coincide with each other in a thickness direction of the substrate, and a projection of the first via hole on the substrate is within a projection of the second via hole on the substrate.. .
Boe Technology Group Co., Ltd.


new patent

Active matrix substrate, display apparatus and manufacturing active matrix substrate


A gate electrode and a capacitance wiring are formed on the insulating substrate in the active matrix substrate, and an interlayer insulating film is formed to cover the insulating substrate. On the gate electrode and the capacitance wiring, contact holes ca and cb are formed.

new patent

Semiconductor device


Provided is a semiconductor device including a transistor having excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) or a semiconductor device including a transistor with high reliability. In the channel width direction of a channel-etched transistor in which an oxide semiconductor film is between first and second gate electrodes, the first and second gate electrodes are connected to each other through an opening portion in first and second gate insulating films.
Semiconductor Energy Laboratory Co., Ltd.


new patent

Semiconductor device


A semiconductor device includes a first pillar-shaped semiconductor layer, a first selection gate insulating film, a first selection gate, a first gate insulating film, a first contact electrode, a first bit line connected to an upper portion of the first pillar-shaped semiconductor layer and an upper portion of the first contact electrode, a second pillar-shaped semiconductor layer, a layer including a first charge storage layer, a first control gate, a layer including a second charge storage layer and formed above the first control gate, a second control gate, a second gate insulating film, a second contact electrode having an upper portion connected to an upper portion of the second pillar-shaped semiconductor layer, and a first lower internal line that connects a lower portion of the first pillar-shaped semiconductor layer and a lower portion of the second pillar-shaped semiconductor layer.. .
Unisantis Electronics Singapore Pte. Ltd.


new patent

Three-dimensional semiconductor memory device and fabricating the same


A semiconductor memory device includes a stack including gate electrodes sequentially stacked on a substrate, a vertical insulating structure penetrating the stack vertically with respect to the gate electrodes, a vertical channel portion disposed on an inner side surface of the vertical insulating structure, and a common source region formed in the substrate and spaced apart from the vertical channel portion. A bottom region of the vertical channel portion has a protruding surface in contact with a bottom region of the vertical insulating structure..

new patent

Semiconductor memory device and manufacturing the same


According to an embodiment, a semiconductor memory device comprises: a memory string comprising memory cells; and a contact electrically connected to one end of the memory string. The memory string comprises: control gate electrodes stacked above a first semiconductor layer; a second semiconductor layer having one end connected to the first semiconductor layer and having as its longitudinal direction a direction perpendicular to the first semiconductor layer, the second semiconductor layer facing the control gate electrodes; and a charge accumulation layer positioned between the control gate electrode and the second semiconductor layer.
Kabushiki Kaisha Toshiba


new patent

Metallic etch stop layer in a three-dimensional memory structure


A dielectric liner, a bottom conductive layer, and a stack of alternating layers including insulator layers and spacer material layers are sequentially formed over a substrate. A memory opening extending through the stack can be formed by an anisotropic etch process that employs the bottom conductive layer as an etch stop layer.
Sandisk Technologies Inc.


new patent

Semiconductor device and semiconductor memory device


According to one embodiment, a semiconductor device includes a first region having a first conductivity type in a semiconductor region; a second region having a second conductivity type in the semiconductor region; a gate electrode above a first part of the semiconductor region between the first region and the second region; a gate insulating layer between the first part and the gate electrode; a third region having the first conductivity type below the second region; and a fourth region across the second region and the third region and including a first impurity.. .
Kabushiki Kaisha Toshiba


new patent

Field-effect transistors having transition metal dichalcogenide channels and methods of manufacture


A transistor that is formed with a transition metal dichalcogenide material is provided. The transition metal dichalcogenide material is formed using a direct deposition process and patterned into one or more fins.
Taiwan Semiconductor Manufacturing Company, Ltd.


new patent

Semiconductor devices including shallow trench isolation (sti) liners


Semiconductor devices including sti liners are provided. The semiconductor devices may include a sti trench that defines an active region in a substrate, a sti liner that extends conformally along side walls and a bottom surface of the sti trench, a device isolation film that is on the sti liner and fills up at least a part of the sti trench, a first gate structure that is disposed on the active region, and a second gate structure that is spaced apart from the first gate structure.
Samsung Electronics Co., Ltd.


new patent

Semiconductor device


A semiconductor device is provided. The semiconductor device may include a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film.

new patent

Electronic component


An electric component comprising a terminal electrode and a hot-melt polymer layer formed on the terminal electrode, wherein the hot-melt polymer layer comprises (i) 100 parts by weight of a metal powder and (ii) 1 to 30 parts by weight of a polymer, wherein melt mass-flow rate (mfr) of the polymer is 0.5 to 20 g/10 min. At 120 to 200° c.
E I Du Pont De Nemours And Company


new patent

Electronic device, and manufacturing electronic device


An electronic device includes a drive substrate (a pressure chamber substrate and a vibration plate) including a piezoelectric element and electrode wirings related to driving of the piezoelectric element formed thereon, and a sealing plate bonded thereto, the electrode wirings are made of wiring metal containing gold (au) on the drive substrate through an adhesion layer which is a base layer, and has a removed portion in which a portion of the wiring metal in a region containing a part bonded to a bonding resin is removed and the adhesion layer is exposed.. .
Seiko Epson Corporation


new patent

Array substrate and fabricating method thereof as well as display device


This disclosure relates to an array substrate and fabricating method thereof as well as a display device, the array substrate comprising: a plurality of scanning lines and a plurality of signal lines, the plurality of scanning lines and plurality of signal lines defining a plurality of pixel regions; and a shielding electrode line arranged above the signal line between adjacent pixel regions, for shielding signal interference between pixel electrodes in the adjacent pixel regions. By means of the technical solution of this disclosure, the shielding electrode line arranged between adjacent pixels can shield crosstalk between the pixel electrodes of adjacent pixels, and can form a transverse storage capacitance with the pixel electrode in the pixel, thereby increasing the total storage capacitance, and maintaining voltage difference between the pixel electrode and a common electrode, so as to diminish the influence of the leakage current and prevent image flicker effectively..
Hefei Boe Optoelectronics Technology Co., Ltd.


new patent

Light-emitting device and backlight module using the same


A light-emitting device is provided. The light-emitting device includes a substrate having a long edge and a short edge, at least one electrode pad assembly, and at least one light-emitting element.
Genesis Photonics Inc.


new patent

Semiconductor device


A semiconductor device capable of achieving a reduction of noise is provided. For example, the semiconductor device includes a first region for forming a core circuit block crbk, a power-source voltage line lnvd1 disposed in the first region, a power-source voltage line lnvd2 disposed on the outside of the first region, and an on-chip capacitor cc.
Renesas Electronics Corporation


new patent

Chip part and making the same


A chip part includes a substrate, an element formed on the substrate, and an electrode formed on the substrate. A recess and/or projection expressing information related to the element is formed at a peripheral edge portion of the substrate..
Rohm Co., Ltd.


new patent

Semiconductor device


A semiconductor device which can achieve a reduction of emi noises is provided. For example, a first region which is used for forming a core circuit block crbk, a first power-source voltage line (lnvd1) in the first region, a first power-source voltage generating circuit (vreg), a first power source pad (pdvcl) outside the first region, a second power-source voltage line lnvd2 which connects the lnvd1 and the pdvcl, and an on-chip capacitor cc are provided.
Renesas Electronics Corporation


new patent

Semiconductor device


A semiconductor device includes a first memory block and a second memory block in a cell region and a first transistor and a second transistor, respectively corresponding to the first and second memory blocks, in a pass transistor region located below the cell region, wherein each of the first and second transistors includes: a first gate electrode coupled to the first memory block and a second gate electrode coupled to the second memory block.. .
Sk Hynix Inc.


new patent

Through electrode substrate and semiconductor device using through electrode substrate


A through-hole electrode substrate includes a substrate including a through-hole extending from a first aperture of a first surface to a second aperture of a second surface, an area of the second aperture being larger than that of the first aperture, the through-hole having a minimum aperture part between the first aperture and the second aperture, wherein an area of the minimum aperture part in a planer view is smallest among a plurality of areas of the through-hole in a planer view, a filler arranged within the through-hole, and at least one gas discharge member contacting the filler exposed to one of the first surface and the second surface.. .
Dai Nippon Printing Co., Ltd.


new patent

Decompression processing apparatus


In a state in which a wafer held by a holding portion contacts with an attraction face of an electrostatic chuck after a loading unit loads the wafer into a chamber, the holding portion is connected to ground and a dc voltage is applied to a lower electrode. Then, the holding portion cancels the attraction of the wafer and is spaced away from the wafer thereby to charge the electrostatic chuck and the wafer with electric charge different in polarity from each other such that the wafer is attracted and held by the attraction face..
Disco Corporation


new patent

Semiconductor device, manufacturing the same and power converter


An object is to avoid an increase in contact resistance of an ohmic electrode by etching in a semiconductor device. There is provided a method of manufacturing a semiconductor device.
Toyoda Gosei Co., Ltd.


new patent

Contact formation for split gate flash memory


An integrated circuit structure includes a plurality of flash memory cells forming a memory array, wherein each of the plurality of flash memory cells includes a select gate and a memory gate. A select gate electrode includes a first portion including polysilicon, wherein the first portion forms select gates of a column of the memory array, and a second portion electrically connected to the first portion, wherein the second portion includes a metal.
Taiwan Semicoductor Manufacturing Company, Ltd.


new patent

Flat gas discharge tube devices and methods


Devices and methods related to flat discharge tubes. In some embodiments, a gas discharge tube (gdt) device can include a first insulator substrate having first and second sides and defining an opening.
Bourns, Inc.


new patent

Elongated capacitively coupled plasma source for high temperature low pressure environments


A modular plasma source assembly for use with a processing chamber is described. The assembly includes an rf hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode.
Applied Materials, Inc.


new patent

X-ray tube


According to one embodiment, an x-ray tube includes a cathode, an anode target and an envelope. The cathode includes an insulating member, a conductive line, a pin assembly, a filament, a focusing electrode, and a terminal assembly.
Toshiba Electron Tubes & Devices Co., Ltd.


new patent

Electrochemical energy storage device and methods of fabrication


An embodiment of an electrochemical energy storage device has been disclosed. The device includes a housing, an electrolyte contained within the housing, and an electrode arrangement at least partially submerged in the electrolyte.
Cooper Technologies Company


new patent

Alkali metal ion capacitor, producing the same and charging and discharging the same


An alkali metal ion capacitor includes a positive electrode containing a positive electrode active material, a negative electrode containing a negative electrode active material, a separator disposed between the positive electrode and the negative electrode, and an electrolyte. The electrolyte contains an alkali metal salt and an ionic liquid.
Sumitomo Electric Industries, Ltd.


new patent

Electrochemical device


An electrochemical device (100) according to an embodiment of the present disclosure includes: a first substrate (12); a second substrate (52) arranged so that a gap is formed between the first substrate and the second substrate; an electrolytic medium (24) including an electrolyte solution filling the gap; a sealing portion (46) formed between the first substrate and the second substrate for sealing the electrolytic medium (24) in the gap; and a first electrode (15), a second electrode (35) and a third electrode (55) being in contact with the electrolytic medium (24) and each having an electrochemically different function, wherein at least a portion of each of the first electrode (15), the second electrode (35) and the third electrode (55) is formed on the first substrate (12) or on the second substrate (52).. .
Panasonic Corporation


new patent

Method of making graphene electrolytic capacitors


The disclosure describes an improved electrolytic capacitor, more specifically, a method of making an electrolytic capacitor with a graphene-based energy storage layer and dielectric. The electrode with layered graphene energy storage and dielectric layers may be used in a variety of electrolytic capacitor configurations..
Custom Electronics, Inc.


new patent

Electronic component and electronic component series including the same


An electronic component includes a component main body including an embedded internal conductor and an outer electrode. The component main body includes an end surface on which the internal conductor is exposed, and a main surface that is continuous with the end surface and intersects with the end surface.
Murata Manufacturing Co., Ltd.


new patent

Electronic component and producing the same


An outer electrode includes sintered layers each containing a sintered metal, an electrically insulating glass layer, and metal layers each containing at least one of sn and cu. Each sintered layer covers a respective end surface of a body and extends from the end surface to at least one main surface of the body.
Murata Manufacturing Co., Ltd.


new patent

High capacitance single layer capacitor and manufacturing method thereof


A capacitor including a dielectric base, a metallization layer, and a very thin dielectric layer formed on one portion of the metallization layer, with an electrode formed on the dielectric layer. The method of the present invention allows for an array of capacitors to be formed so as to provide a very thin functional dielectric layer supported on a thicker dielectric substrate.
Knowles Cazenovia, Inc.


new patent

Multilayer ceramic capacitor and manufacturing multilayer ceramic capacitor


A multilayer ceramic capacitor that includes an internal electrode containing at least one kind of metal a selected from the group consisting of in, ga, zn, bi, and pb and dissolved in ni to form a solid solution. The internal electrode has a ratio of a of 1.4 atomic percent or more to a total amount of a and ni in a near-interface region located to a depth of 2 nm from a surface of the internal electrode facing a corresponding ceramic dielectric layer.
Murata Manufacturing Co., Ltd.


new patent

Power inductor


A power inductor may include: an insulating substrate; first and second coil layers disposed on both surfaces of the insulating substrate; an inductor body having a coil part including the insulating substrate and the first and second coil layers and a cover part including upper and lower cover parts, and having end portions of the first and second coil layers exposed to both end surfaces thereof; and first and second external electrodes electrically connected to the end portions of the first and second coil layers, respectively, wherein each of the upper and lower cover parts includes a metal composite plate. Therefore, the power inductor has excellent dc-bias characteristics..
Samsung Electro-mechanics Co., Ltd.


new patent

Electronic component and manufacturing electronic component


An electronic component includes a body made of an insulator, a coating film covering the body, a conductor located in the body, and outer electrodes each of which is connected to the conductor. The insulator contains a magnetic metal powder.
Murata Manufacturing Co., Ltd.


new patent

Coating composition for transparent electrode passivation layer and transparent electrode having passivation layer


Provided is a coating composition for a transparent electrode passivation layer, the coating composition including a metal oxide and at least one selected from the group consisting of ethylene glycol, propylene glycol, diethylene glycol, triethylene glycol, and tetraethylene glycol. When a passivation layer formed using the coating composition for a transparent electrode passivation layer according to the present invention is applied to a transparent electrode, the passivation layer is capable of ensuring the heat resistance and durability of the transparent electrode while maintaining the transmittance of the transparent electrode.
Korea Institute Of Machinery And Materials


new patent

Stable compositions of carbon nanotubes - electrolytic polymers


The invention relates to stable compositions of carbon nanotubes and of electrolytic polymers, these electrolytic polymers being characterized by the presence of phosphonyl imide or sulfonyl imide functions or alternatively phosphoric acid functions. The invention also relates to the manufacture of transparent electrodes comprising these compositions of carbon nanotubes and of electrolytic polymers..
Institut Polytechnique De Bordeaux


new patent

Dispersions for nanoplatelets of graphene-like materials and methods for preparing and using same


A dispersion of nanoplatelet graphene-like material, such as graphene nanoplatelets, in a solid or liquid dispersion media wherein the nanoplatelet graphene-like material is dispersed substantially uniformly in the dispersion media with a graphene-like material dispersant. Such dispersions may be used to prepare articles by three-dimensional (3d) printing, as well as to provide electrically conductive inks and coatings, chemical sensors and biosensors, electrodes, energy storage devices, solar cells, etc.
Graphene 3d Lab Inc.


new patent

Systems and methods for forming and maintaining a high performance frc


A high performance field reversed configuration (frc) system includes a central confinement vessel, two diametrically opposed reversed-field-theta-pinch formation sections coupled to the vessel, and two divertor chambers coupled to the formation sections. A magnetic system includes quasi-dc coils axially positioned along the frc system components, quasi-dc mirror coils between the confinement chamber and the formation sections, and mirror plugs between the formation sections and the divertors.
Tri Alpha Energy, Inc.


new patent

Ferroelectric mechanical memory based on remanent displacement and method


A ferroelectric mechanical memory structure comprising a substrate, a mems switch element movable between a first position and at least one second position, the mems switch element comprising first and second electrodes, a layer of ferroelectric material positioned between the first and second electrodes so that upon application of voltage between the first and second electrodes the mems switch element moves between the first position and the second position, and a switch contact which contacts the first electrode only when the mems switch element is in the first position, wherein the ferroelectric material is selected so that the remanent strain within the layer of ferroelectric material is controlled by the history of the voltage potential applied to the ferroelectric material by the first and second electrodes, and wherein the remanent strain is sufficient to retain the mems switch element in the first or second position upon removal of the voltage.. .
U.s. Army Research Laboratory Attn: Rdrl-loc-i




Electrode topics:
  • Phosphoric Acid
  • Internal Combustion Engine
  • Carbon Atoms
  • Porous Carbon
  • Double Layer Capacitor
  • Graphene Oxide
  • Aqueous Solution
  • Lithium Ion
  • Exhaust Gas
  • Soot Sensor
  • Combustion
  • Calibration
  • Electronic Apparatus
  • Electrical Signal
  • Electric Conversion


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