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Electrode patents



      

This page is updated frequently with new Electrode-related patent applications.




Date/App# patent app List of recent Electrode-related patents
04/07/16
20160100487 
 Manufacturing method and structure of circuit board with very fine conductive circuit lines patent thumbnailManufacturing method and structure of circuit board with very fine conductive circuit lines
A circuit board manufacturing method includes the steps of providing a conductive motherboard; forming a masking layer on the conductive motherboard, and the masking layer having a plurality of recessed portions that form a predetermined circuit pattern; forming a conductive electrode in each recessed portion, and the conductive electrodes together forming a conductive layer; providing a substrate having an adhesive layer provided thereon for sticking to a top of the masking layer and the conductive layer; and separating the substrate, the adhesive layer and the conductive layer from the conductive motherboard and the masking layer to provide a circuit board. The conductive motherboard is repeatedly usable and presents the predetermined circuit pattern through electroforming process, and the circuit pattern can be transferred to the substrate.
T-kingdom Co., Ltd.


04/07/16
20160100456 
 Hand-held multi-function heating device patent thumbnailHand-held multi-function heating device
A hand-held multi-function heating device includes a body receiving a power connection member and a battery. A power connector is mounted to the power connection member and includes first and second electrodes electrically connected to first and second electrodes of the power connection member respectively.
Pro-iroda Industries, Inc.


04/07/16
20160100246 
 Unidirectional condenser microphone unit patent thumbnailUnidirectional condenser microphone unit
A unidirectional condenser microphone includes a first and second condenser elements each having a diaphragm and a fixed electrode disposed opposite the diaphragm, an insulating base having an opening at the center thereof and supporting the respective fixed electrodes of the first and second condenser elements at opposite sides of the insulating base, acoustic resistance materials covering both ends of the opening, and air chambers formed respectively between each of the fixed electrodes and the insulating base, such that respective back sides of the diaphragms of the first and the second condenser elements are acoustically in communication with each other, wherein the diaphragm of the second condenser elements is formed to be an annular-shape having a central opening, and the second condenser element has a rear acoustic terminal hole communicating with the central opening.. .
Kabushiki Kaisha Audio-technica


04/07/16
20160099705 
 Acoustic wave device patent thumbnailAcoustic wave device
An acoustic wave device includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; a silicon oxide film located at an opposite side of at least one of the lower electrode and the upper electrode from the piezoelectric film; a non-oxygen-containing insulating film located between the at least one of the lower electrode and the upper electrode and the silicon oxide film; and an additional film located at an opposite side of the silicon oxide film from the non-oxygen-containing insulating film and made of a material different from a material of the silicon oxide film.. .
Taiyo Yuden Co., Ltd.


04/07/16
20160099701 
 Nano- and micro-electromechanical resonators patent thumbnailNano- and micro-electromechanical resonators
A resonator includes a piezoelectric plate and interdigitated electrode(s). The interdigitated electrode includes a plurality of conductive strips disposed over a top surface of the piezoelectric plate.
Northeastern University


04/07/16
20160099663 
 Electrostatic machine system and  operation patent thumbnailElectrostatic machine system and operation
An illustrative electrostatic machine includes a shaft that is configured to rotate about an axis, a rotor electrode, and a stator electrode. The rotor electrode and the stator electrode are separated by a gap and form a capacitor.
C-motive Technologies Inc.


04/07/16
20160099551 
 Spark plug for internal combustion engine patent thumbnailSpark plug for internal combustion engine
A spark plug includes a tubular housing, a tubular insulator, a center electrode, a ground electrode, a resistor, and a stem. The insulator is supported inside the housing.
Denso Corporation


04/07/16
20160099485 
 Non-aqueous secondary battery and  producing same patent thumbnailNon-aqueous secondary battery and producing same
An easier method is provided for producing a battery comprising an oxalato complex-derived coating on the negative electrode. This invention provides a method for producing a non-aqueous secondary battery, the method comprising: preparing a negative electrode paste comprising a negative electrode active material, a binder, and a polycarboxylic acid-based gas formation inhibitor; fabricating a negative electrode by applying the negative electrode paste to a negative current collector surface; constructing an assembly with a positive electrode, the negative electrode, and a non-aqueous electrolyte solution comprising an oxalato complex; and subjecting the assembly to activation thereby to decompose the oxalato complex and forming a coating derived from the oxalato complex on the negative electrode surface while inhibiting gas formation with the gas formation inhibitor..
Toyota Jidosha Kabushiki Kaisha


04/07/16
20160099483 
 Electrode having a dual layer structure,  manufacturing thereof, and lithium secondary battery comprising the same patent thumbnailElectrode having a dual layer structure, manufacturing thereof, and lithium secondary battery comprising the same
The present invention relates to an electrode having a dual layer structure, a method for manufacturing the same, and a lithium secondary battery comprising the same, the electrode comprising: an electrode current collector; a middle layer formed on at least one side of the electrode current collector; and an electrode active material layer formed on the middle layer, wherein the middle layer comprises a first binder, wherein the electrode active material layer comprises an electrode active material and a second binder, and wherein the first binder and the second binder are the same kind of material but have different crystalline phases.. .
Lg Chem, Ltd.


04/07/16
20160099482 
 Solid-state batteries with improved electrode conductivity and methods for forming the same patent thumbnailSolid-state batteries with improved electrode conductivity and methods for forming the same
Embodiments provided herein describe solid-state lithium batteries and methods for forming such batteries. A first current collector is provided.
Intermolecular, Inc.


04/07/16
20160099481 

Method for manufacturing a non-aqueous electrolyte secondary battery


An opening of a packaging member containing a positive electrode, a negative electrode, and a non-aqueous electrolyte solution is temporarily sealed to produce a temporarily sealed battery. The temporarily sealed battery is initially charged so that a negative electrode potential becomes higher than 0.8 v and 1.4 v or lower (versus li/li+), and is stored in an atmosphere of 50° c.
Ishihara Sangyo Kaisha, Ltd.


04/07/16
20160099475 

Fuel cell


A fuel cell includes a membrane electrode assembly and a metal separator. The membrane electrode assembly includes an electrolyte membrane, first and second electrodes, and a resin frame member.
Honda Motor Co., Ltd.


04/07/16
20160099473 

Catalyst particle, support-type catalyst particle, and uses thereof


A catalyst particle including platinum and palladium, and having a proportion of palladium in the surface of the particle, measured by x-ray photoelectron spectroscopy (xps), of 45 to 55 atom % with respect to a total amount of platinum and palladium of 100 atom %. Also disclosed is a support-type catalyst particle, a fuel cell catalyst layer, an electrode including the fuel cell catalyst layer and a membrane electrode assembly including the electrode..
Showa Denko K.k.


04/07/16
20160099471 

Positive electrode having enhanced conductivity and secondary battery including the same


Disclosed is a positive electrode for secondary batteries including a positive electrode mix coated on a current collector. More particularly, disclosed are a positive electrode for secondary batteries including a positive electrode mix coated on a current collector and a secondary battery including the same, wherein the current collector includes carbon nanotubes (cnts) vertically grown from a surface of the current collector, the positive electrode mix contact the current collector in a state that at least a portion of the positive electrode mix is interposed in a space between the carbon nanotubes, and the positive electrode has high conductivity and safety..
Lg Chem, Ltd.


04/07/16
20160099470 

Electrode having enhanced adhesion for lithium secondary batteries


Disclosed is an electrode for secondary batteries including an electrode mix, which includes an electrode active material and a binder, coated on a current collector. More particularly, the electrode includes a first electrode mix layer including a first binder, a glass transition temperature (tg) of which is lower than that of a second binder, and an electrode active material, and coated on the current collector; and a second electrode mix layer including the second binder, a glass transition temperature (tg) of which is higher than that of the first binder, and an electrode active material, and coated on the first electrode mix layer..
Lg Chem, Ltd.


04/07/16
20160099468 

Solid-state batteries and methods for forming the same


Embodiments provided herein describe solid-state lithium batteries and methods for forming such batteries. A first current collector is provided.
Intermolecular, Inc.


04/07/16
20160099467 

Stabilized lithium powder


Stabilized lithium powder according to an embodiment of this disclosure includes powder particles satisfying a relation of c≦0.90, where c represents average circularity of the powder particles. And a lithium secondary battery according to an embodiment of this disclosure comprises a negative electrode doped with lithium from the stabilized lithium powder for a lithium ion second battery according to an embodiment of this disclosure, a positive electrode, and an electrolyte..
Tdk Corporation


04/07/16
20160099465 

Stabilized lithium powder, and negative electrode and lithium ion secondary battery using the same


Stabilized lithium powder according to an embodiment of this disclosure includes lithium particles. Each lithium particle includes an inorganic compound on a surface thereof, the inorganic compound contains lithium hydroxide, and the lithium hydroxide is contained by 2.0 wt % or less relative to the entire stabilized lithium powder..
Tdk Corporation


04/07/16
20160099463 

Composite negative active material and preparing the same, negative electrode including composite negative active material, and lithium secondary battery including negative electrode


A composite negative active material including a piezoelectric material; and a negative active material. Also a negative electrode including the composite negative active material, and a lithium secondary battery including the negative electrode..
Samsung Sdi Co., Ltd.


04/07/16
20160099462 

Novel secondary battery


Disclosed herein is a lithium secondary battery including a positive electrode including lithium iron phosphate and layered lithium nickel manganese cobalt oxide as a positive electrode active material and a negative electrode including a negative electrode active material having a potential difference of 3.10 v or higher from the lithium iron phosphate at a point of 50% state of charge (soc) afforded by the entirety of the lithium iron phosphate.. .
Lg Chem, Ltd.


04/07/16
20160099461 

Electrode paste production method


Provided is an electrode paste production method that can produce a low-viscosity electrode paste which can be readily applied even if the solid content concentration is high, for example in excess of 65% by mass. The electrode paste production method, in which the paste contains an active material and a solvent, includes a micromixing treatment step in which a mixture of a solid fraction containing an active material blended at a high solid content concentration and a solvent is kneaded using a micromixer..
Toyota Jidosha Kabushiki Kaisha


04/07/16
20160099460 

Positive electrode active material for lithium ion secondary battery, and positive electrode for lithium ion secondary battery and lithium ion secondary battery comprising the same


A positive electrode active material includes a primary particle represented by compositional formula (1): li1+xniycozm1−x−y−zo2 (1), where x is a number satisfying a relation represented by an expression −0.12≦x≦0.2; y is a number satisfying a relation represented by an expression 0.7≦y≦0.9; z is a number satisfying a relation represented by an expression 0.05≦z≦0.3; and m is at least one element selected from the group consisting of mg, al, ti, mn, zr, mo, and nb; or a secondary particle into which the primary particle aggregates. The primary particle or the secondary particle includes a free lithium compound in a weight proportion of 0.1% or more and 2.0% or less, and the weight of lithium hydroxide in the free lithium compound is 60% or less of the weight of lithium carbonate in the free lithium compound..
Hitachi Metals, Ltd.


04/07/16
20160099457 

Rechargeable battery and manufacturing method thereof


A rechargeable battery includes: a first electrode assembly and a second electrode assembly, each of the first and second electrode assemblies including a first electrode and a second electrode, each of the first and second electrodes including an electrode plate and an electrode uncoated region; a case accommodating the first and second electrode assemblies; a cap assembly sealing the case; a first current collecting member electrically connecting the first electrode of the first electrode assembly and the first electrode of the second electrode assembly; and a second current collecting member electrically connecting the second electrode of the first electrode assembly and the second electrode of the second electrode assembly. Each of the first and second current collecting members includes a first current collecting plate coupled with a connecting terminal, and a second current collecting plate, one surface of the second current collecting plate contacting at least one of the electrode uncoated regions..
Samsung Sdi Co., Ltd.


04/07/16
20160099456 

Complex electrode assembly including plurality of electrode assemblies and electrochemical device comprising the complex electrode assembly


A complex electrode assembly includes a first sheet-type wiring which extends in a lengthwise direction of the first sheet-type wiring and comprises a sheet region of which a width that is perpendicular to the lengthwise direction is greater than a thickness that is perpendicular to the lengthwise direction and a width direction of the first sheet-type wiring, and electrode assemblies which are arranged separate from each other in the lengthwise direction of the first sheet-type wiring and are electrically connected to the first sheet-type wiring. The first sheet-type wiring may be disposed to face an outer surface of each of the electrode assemblies..
Samsung Electronics Co., Ltd.


04/07/16
20160099455 

Energy storage device and energy storage apparatus


An energy storage device includes: an electrode assembly; current collectors connected to the electrode assembly; terminal plates to which bus bars for connecting energy storage devices to each other are fixed; and metal-made rivets which fasten the terminal plates and the current collectors to each other. The rivet includes: a body portion fixed to the current collector; a first shaft portion extending from the body portion and passing through a first through hole formed in the terminal plate; and a first swaged portion formed on a distal end of the first shaft portion, and fixing the terminal plate between the first swaged portion and the body portion in a sandwiching manner.
Gs Yuasa International Ltd.


04/07/16
20160099454 

Flexible electrochemical device including electrically connected electrode assemblies


A flexible electrochemical device in which a plurality of electrode assemblies is electrically connected to each other so that the flexible electrochemical device may be repeatedly bent, includes at least two electrode assemblies that are arranged separate from each other and a casing member that packs the at least two electrode assemblies and includes at least two accommodation portions in which electrode assemblies are individually received, and a connecting portion that connects the at least two adjacent accommodation portions where a path between a conductive line that electrically connects at least two electrode assemblies together and an electrolyte is defined in the connecting portion.. .
Samsung Electronics Co., Ltd.


04/07/16
20160099446 

Resin film, metal terminal member, and secondary cell


A resin film, which is adapted for use in a packaging material for secondary cell having a sealant layer formed of a polyolefin resin and is disposed between the sealant layer and leads, respectively, connected to a positive electrode and a negative electrode, includes a first layer at a position close to the leads and a second layer disposed at a position close to the sealant layer, a heat quantity of the second layer, measured according to jis k 7122, being larger than a heat quantity of fusion of the first layer.. .
Toppan Printing Co., Ltd.


04/07/16
20160099445 

Rechargeable battery


A rechargeable battery includes an electrode assembly comprising electrodes having coated and uncoated regions, being located on opposite sides of a separator and spirally wound together with the separator; a case accommodating the electrode assembly; an insulating plate on the electrode assembly and having a protruding portion and internal terminal holes; and a cap plate sealing the case and having terminal holes, wherein each of the electrode terminals passes through a respective one of the internal terminal holes to protrude from that terminal hole.. .
Samsung Sdi Co., Ltd.


04/07/16
20160099444 

Rechargeable battery


A rechargeable battery includes an electrode assembly comprising electrodes having coated and uncoated regions and being located at opposite sides of a separator; a case accommodating the electrode assembly; a cap plate sealing the case and having terminal holes through which electrode terminals coupled to the uncoated regions extend; a gasket between each electrode terminal and the cap plate; and a first insulating plate between the cap plate and the electrode assembly and fastened to the gaskets.. .
Samsung Sdi Co., Ltd.


04/07/16
20160099441 

Sealed battery


A sealed battery 10 is provided, which has a seam 45 between a case main body 21 and a lid 22 on an outer surface 22a side of the lid 22, and in which this seam 25 is laser welded. A terminal 40 connected to an electrode assembly in the battery 10 is led to the outside from a through hole in the lid 22 and is separated from the lid outer surface 22a by an outside resin member 60.
Toyota Jidosha Kabushiki Kaisha


04/07/16
20160099440 

Rechargeable battery


A rechargeable battery according to an exemplary embodiment of the present invention includes: an electrode assembly including electrodes at opposite sides of a separator, each of the electrodes having a coated region and an uncoated region, and the electrodes and the separator being spirally wound; an insulating case for accommodating the electrode assembly and allowing the uncoated regions to be drawn out through respective uncoated region holes; a case for accommodating the insulating case; and a cap plate coupled to an opening of the case and allowing electrode terminals respectively coupled to the uncoated regions to be drawn out through respective terminal holes.. .

04/07/16
20160099438 

Organic light-emitting diode (oled) display


An organic light-emitting diode (oled) display is disclosed. In one aspect, the oled display includes a plurality of pixels and each pixel includes a first area configured to emit light and a second area configured to transmit external light therethrough.
Samsung Display Co., Ltd.


04/07/16
20160099436 

Quasi-crystal organic light-emitting display panel and simulating optical efficiency of the same


A quasi-crystal organic light-emitting display panel including a first electrode layer, an organic light-emitting layer, a second electrode layer, a buffer layer, a 10-fold quasi-crystal layer and a package cover is provided. The organic light-emitting layer is located on the first electrode layer.
Winbond Electronics Corp.


04/07/16
20160099431 

Organic light emitting diode and organic light emitting display device including the same


An organic light emitting element is provided. An organic light emitting element according to an exemplary embodiment includes: a first electrode and a second electrode that face each other; an emission layer provided between the first electrode and the second electrode; and an electron injection layer provided between the second electrode and the emission layer, wherein the electron injection layer includes ca, and the second electrode includes a first material including at least one of ag, al, and mg and a second material including at least one of yb, ca, sm, eu, tb, sr, ba, la, and ce..
Samsung Display Co., Ltd.


04/07/16
20160099430 

Organic photoelectronic device and image sensor


Provided is an organic photoelectronic device including a first light-transmitting electrode positioned at a light incidence side, a second light-transmitting electrode facing the first light-transmitting electrode, a photoactive layer positioned between the first light-transmitting electrode and the second light-transmitting electrode and selectively absorbing light in a given (or, alternatively, desired or predetermined) wavelength region, and a selective light transmittance layer positioned between the first light-transmitting electrode and the photoactive layer, between the second light-transmitting electrode and the photoactive layer, or between the first light-transmitting electrode and the photoactive layer and between the second light-transmitting electrode and the photoactive layer and increasing transmittance of the light in a wavelength region other than the given (or, alternatively, desired or predetermined) wavelength region absorbed by the photoactive layer, and an electronic device including the image sensor is also provided.. .
Snu R&db Foundation


04/07/16
20160099429 

Optical detector and manufacturing the same


An optical detector (110) is disclosed. The optical detector (110) comprises: —an optical sensor (112), having a substrate (116) and at least one photosensitive layer setup (118) disposed thereon, the photosensitive layer setup (118) having at least one first electrode (120), at least one second electrode (130) and at least one photovoltaic material (140) sandwiched in between the first electrode (120) and the second electrode (130), wherein the photovoltaic material (140) comprises at least one organic material, wherein the first electrode (120) comprises a plurality of first electrode stripes (124) and wherein the second electrode (130) comprises a plurality of second electrode stripes (134), wherein the first electrode stripes (124) and the second electrode stripes (134) intersect such that a matrix (142) of pixels (144) is formed at intersections of the first electrode stripes (124) and the second electrode stripes (134); and —at least one readout device (114), the readout device (114) comprising a plurality of electrical measurement devices (154) being connected to the second electrode stripes (134) and a switching device (160) for subsequently connecting the first electrode stripes (124) to the electrical measurement devices (154)..
Basf Se


04/07/16
20160099402 

Electromechanical conversion element, liquid drop discharge head and image forming apparatus


An electromechanical conversion element includes a lower electrode formed directly or indirectly on a substrate or a base film; an electromechanical conversion film formed on the lower electrode and including a piezoelectric body having a perovskite crystal structure preferentially oriented with a {n00} plane where n is a positive integer; and an upper electrode formed on the electromechanical conversion film. A diffraction peak at a position 2θ at which a diffraction intensity has a maximum value and which corresponds to a (x00) plane or a (00x) plane, x being 1 or 2, obtained by θ-2θ measurement in x-ray diffraction measurement, shows a trapezoidal peak shape and has two or more bending points..
Ricoh Company, Ltd.


04/07/16
20160099401 

Resonator, oscillator, electronic apparatus, and mobile object


A resonator includes a resonator element including a substrate gradually increasing in thickness from an outer edge toward a center, excitation electrodes respectively disposed on both principal surfaces of the substrate, and a pair of electrode pads electrically connected to the excitation electrodes, disposed on at least one of the both principal surfaces, and disposed on one end side of the substrate, and a second substrate as a base, the pair of electrode pads are bonded to the second substrate via respective first bonding members, two places of the other end of the substrate on the opposite side to the one end are bonded to the second substrate via respective second bonding members, and a distance s1 between the two first bonding members, and a distance s2 between the two second bonding members fulfill s1<s2.. .
Seiko Epson Corporation


04/07/16
20160099400 

Ceramic device and piezoelectric device


A piezoelectric device is a fired body including a body part 10 and external electrodes 21 and 22. A surface of the side electrode 22 is comprised only of a material for the side electrode 22.
Ngk Insulators, Ltd.


04/07/16
20160099386 

Light emitting diode and manufacturing method thereof


A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a to work function of the second electrode.. .
Electronics And Telecommunications Research Institute


04/07/16
20160099385 

Method for manufacturing vertical type light emitting diode, vertical type light emitting diode, manufacturing ultraviolet ray light emitting diode, and ultraviolet ray light emitting diode


A vertical type light emitting diode includes a nitride semiconductor having a p-n conjunction structure with a transparent material layer formed on a p type clad layer, the transparent material layer having a refractive index different from that of the p type clad layer and having a pattern structure of mesh, punched plate, or one-dimensional grid form, etc. A reflective metal electrode layer is formed on the transparent material layer as a p-electrode.
Korea Polytechnic University Industry Academic Cooperation Foundation


04/07/16
20160099384 

Light emitting device


A light emitting device includes a light emitting structure having a plurality of light emitting regions including a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode in one of the light emitting regions, a second electrode in another of the light emitting regions, and at least one connection electrode to sequentially connect the light emitting regions in series. The light emitting regions connected in series are divided into 1st to ith light emitting region groups.
Lg Innotek Co., Ltd.


04/07/16
20160099383 

Semiconductor device and manufacturing the same


A semiconductor device including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer which are sequentially stacked; a first conductivity type upper electrode portion and a first conductivity type lower electrode portion disposed to correspond to each other with the first conductivity type semiconductor layer interposed therebetween; a second conductivity type upper electrode portion and a second conductivity type lower electrode portion disposed to correspond to each other with the first and second conductivity type semiconductor layers interposed therebetween; and a second conductivity type electrode connection portion electrically connecting the second conductivity type upper electrode portion and the second conductivity type lower electrode portion.. .
Lg Electronics Inc.


04/07/16
20160099377 

Light-emitting element


Wherein λ is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.. .

04/07/16
20160099365 

Collector grid and interconnect structures for photovoltaic arrays and modules


An interconnected arrangement of photovoltaic cells is achieved using laminating current collector electrodes. The electrodes comprise a pattern of conductive material extending over a first surface of sheetlike substrate material.

04/07/16
20160099361 

Element and photovoltaic cell


The invention provides an element including a semiconductor substrate and an electrode disposed on the semiconductor substrate, the electrode being a sintered product of a composition for an electrode that includes phosphorus-containing copper alloy particles, glass particles and a dispersing medium, and the electrode includes a line-shaped electrode having an aspect ratio, which is defined as electrode short length : electrode height, of from 2:1 to 250:1.. .
Hitachi Chemical Company, Ltd.


04/07/16
20160099358 

Method of manufacturing semiconductor device


A semiconductor device including a nonvolatile memory cell and a field effect transistor together is improved in performance. In a method of manufacturing a semiconductor device, a hydrogen-containing insulating film is formed before heat treatment of a semiconductor wafer, the hydrogen-containing insulating film covering a gate electrode and agate insulating film in a region that will have a memory cell therein, and exposing a region that will have therein a misfet configuring a peripheral circuit.
Renesas Electronics Corporation


04/07/16
20160099351 

Self-aligned slotted accumulation-mode field effect transistor (accufet) structure and method


This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device includes trenched gates each having a stick-up gate segment extended above a top surface of the semiconductor substrate surrounded by sidewall spacers.

04/07/16
20160099350 

Semiconductor device


A semiconductor device includes a fin-shaped semiconductor layer on a semiconductor substrate and extends in a first direction with a first insulating film around the fin-shaped semiconductor layer. A pillar-shaped semiconductor layer resides on the fin-shaped semiconductor layer.
Unisantis Electronics Singapore Pte. Ltd.


04/07/16
20160099336 

Opc enlarged dummy electrode to eliminate ski slope at esige


Enlarging the dummy electrode to the sti top width size by opc cut mask correction and the resulting device are disclosed. Embodiments include forming an sti region in a silicon substrate, the sti region having a top width; and forming a dummy electrode on the sti region and a gate electrode on the silicon substrate, the dummy electrode having a width greater than or equal to the sti region top width..
Globalfoundries Inc.


04/07/16
20160099335 

Semiconductor device and manufacturing the same


A semiconductor device includes: a first electrode; a second electrode; an interlayer insulating film made of a porous insulating material and formed above the first electrode and the second electrode; and connection parts electrically connected to the first electrode and the second electrode respectively, wherein a cavity is formed between the interlayer insulating film and a surface of the first electrode, a surface of the second electrode, and parts of surfaces of the connection parts.. .
Fujitsu Limited


04/07/16
20160099333 

Field effect transistor and fabrication


An improved field effect transistor and method of fabrication are disclosed. A barrier layer stack is formed in the base and sidewalls of a gate cavity.
Globalfoundries Inc.


04/07/16
20160099329 

Suspended body field effect transistor


A semiconductor fin including a vertical stack, from bottom to top, of a second semiconductor material and a first semiconductor material is formed on a substrate. A disposable gate structure straddling the semiconductor fin is formed.
Globalfoundries Inc.


04/07/16
20160099327 

Thin film transistor array panel


A thin film transistor array panel is capable of increasing an aperture ratio and decreasing parasitic capacitance between a gate electrode and a drain electrode by reducing an area of a thin film transistor. The thin film transistor array panel includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a gate insulating layer on the gate line; a semiconductive island on the gate insulating layer; a circular drain electrode on the semiconductive island; and a source electrode disposed on the semiconductive island and shaped like a circular band bent in a direction from which the drain electrode is disposed.
Samsung Display Co., Ltd.


04/07/16
20160099326 

Method for making an integrated circuit


A method includes making a gate stack on the surface of an active zone, including depositing a first dielectric layer; depositing a gate conductive layer; depositing a first metal layer; depositing a second metal layer; depositing a second dielectric layer; partially etching the gate stack for the formation of a gate zone on the active zone; making insulating spacers on either side of the gate zone on the active zone; making source and drain electrodes zones; making silicidation zones on the surface of the source and drain zones; etching, in the gate zone on the active zone, the second dielectric layer and the second metal layer with stopping on the first metal layer, so as to form a cavity between the insulating spacers; making a protective plug at the surface of the first metal layer of the gate zone on the active zone, where the protective plug fills the cavity.. .
Stmicroelectronics (crolles 2) Sas


04/07/16
20160099324 

Structure and formation semiconductor device with gate stack


A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a first gate electrode over the semiconductor substrate.
Taiwan Semiconductor Manufacturing Co., Ltd


04/07/16
20160099308 

Oxide terminated trench mosfet with three or four masks


An oxide termination semiconductor device may comprise a plurality of gate trenches, a gate runner, and an insulator termination trench. The gate trenches are located in an active region.
Alpha And Omega Semiconductor Incorporated


04/07/16
20160099307 

Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area


This invention discloses a semiconductor power device formed in a semiconductor substrate of a first conductivity type comprises an active cell area and a termination area surrounding the active cell area and disposed near edges of the semiconductor substrate. The termination area includes a plurality of trenches filled with a conductivity material forming a shield electrode and insulated by a dielectric layer along trench sidewalls and trench bottom surface wherein the trenches extending vertically through a body region of a second conductivity type near a top surface of the semiconductor substrate and further extending through a surface shield region of the first conductivity type.
Alpha And Omega Semiconductor Incorporated


04/07/16
20160099304 

Monx as a top electrode for tiox based dram applications


A capacitor stack includes a base bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer.
Intermolecular, Inc.


04/07/16
20160099303 

Doped electrode for dram capacitor stack


In some embodiments, a metal oxide second electrode material is formed as part of a mim dram capacitor stack. The second electrode material is doped with one or more dopants.
Intermolecular, Inc.


04/07/16
20160099302 

Embedded metal-insulator-metal capacitor


A method of manufacturing a semiconductor device comprising a capacitor structure is provided, including the steps of forming a first metallization layer comprising a first dielectric layer and a first conductive layer functioning as a lower electrode for the capacitor structure over a semiconductor substrate, forming a barrier layer functioning as a capacitor insulator for the capacitor structure on the first metallization layer, forming a metal layer on the barrier layer and etching the metal layer to form an upper electrode of the capacitor structure.. .
Globalfoundries Inc.


04/07/16
20160099300 

Thin film transistor array substrate and organic light-emitting diode display including the same


A thin film transistor (tft) array substrate and organic light-emitting diode (oled) display including the same are disclosed. In one aspect, the array substrate includes a substrate, a driving tft formed over the substrate and including a driving gate electrode, and a storage capacitor including a first electrode electrically connected to the driving gate electrode and a second electrode formed over and insulated from the first electrode.
Samsung Display Co., Ltd.


04/07/16
20160099298 

Organic light-emitting display apparatus


An organic light-emitting display apparatus includes a thin film transistor including an active layer, gate, source and drain electrodes, a first insulating layer disposed between the active layer and the gate electrode, and a second insulating layer disposed between the gate electrode and the source and drain electrodes; a pad electrode including a first pad layer disposed on the same layer as the source and drain electrodes and a second pad layer disposed on the first pad layer; a third insulating layer covering the source electrode and the drain electrode and an end portion of the pad electrode; a pixel electrode including a semi-transmissive metal layer and disposed in an opening formed in the third insulating layer; and a fourth insulating layer having an opening formed in a location corresponding to an opening formed in the third insulating layer and covering the end portion of the pixel electrode.. .
Samsung Display Co., Ltd.


04/07/16
20160099296 

Organic light-emitting display apparatus


An organic light-emitting display apparatus includes a substrate; a plurality of pixels provided on a first surface of the substrate and each comprising a first area configured to emit light and a second area configured to have external light transmit therethrough; a pixel circuit unit provided in the first area of each of the plurality of pixels and comprising at least one thin-film transistor (tft); a first electrode provided in the first area of each of the plurality of pixels and electrically connected to the pixel circuit unit; a second electrode facing the plurality of first electrodes, electrically connected throughout the plurality of pixels, and provided in at least in the first area of each of the plurality of pixels; an intermediate layer disposed between the first electrode and the second electrode and comprising an organic emission layer; and an inorganic insulating film provided in the second area of each of the plurality of pixels, and comprising a plurality of layers having different refractive indices, wherein at least one of the plurality of layers has a moth eye structure.. .
Samsung Display Co., Ltd.


04/07/16
20160099290 

Memory device


According to one embodiment, a memory device includes a first gate electrode, a second gate electrode, a third gate electrode, a first active area and a second active area on a substrate. The first to the third gate electrodes extend in a first direction.
Kabushiki Kaisha Toshiba


04/07/16
20160099286 

Semiconductor device including image pick up device


The performance of a semiconductor device is improved by preventing 1/f noise from being generated in a peripheral transistor, in the case where the occupation area of photodiodes, which are included in each of a plurality of pixels that form an image pickup device, is expanded. In the semiconductor device, the gate electrode of an amplification transistor is formed by both a gate electrode part over an active region and a large width part that covers the boundary between the active region and an element isolation region and the active region near the boundary and that has a gate length larger than that of the gate electrode part..
Renesas Electronics Corporation


04/07/16
20160099278 

Back-illuminated integrated imaging device with simplified interconnect routing


A back-illuminated integrated imaging device is formed from a semiconductor substrate including a zone of pixels bounded by capacitive deep trench isolations. A peripheral zone is located outside the zone of pixels.
Stmicroelectronics (crolles 2) Sas


04/07/16
20160099265 

Display apparatus and manufacturing the same


A display apparatus includes a base substrate, a pixel on the base substrate, and a color filter part between the base substrate and the pixel. The pixel includes a cover layer defining a tsc (tunnel shaped cavity) on the base substrate, an image display part provided in the tsc, and first and second electrodes which apply an electric field to the image display part..
Samsung Display Co., Ltd.


04/07/16
20160099264 

System and manufacturing a thin film transistor substrate


In a method of manufacturing a thin film transistor substrate, a first metal layer is formed on a first surface of a base substrate. The base substrate is cooled by contacting the first metal layer with a first cooling plate and by contacting a second surface of the base substrate with a second cooling plate.
Samsung Display Co., Ltd.


04/07/16
20160099261 

Metal wiring and manufacturing the same, and metal wiring substrate and manufacturing the same


A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the icp power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas.
Semiconductor Energy Laboratory Co., Ltd .


04/07/16
20160099257 

Thin film transistor and manufacturing the same


A thin film transistor includes an active pattern formed on a substrate; a gate pattern formed on the active pattern and comprising a gate electrode and a gate line; a gate insulating layer disposed between the gate pattern and the active pattern; a source electrode that overlaps a first side of the active pattern and contacts a data line; a drain electrode that overlaps a second side of the active pattern and is separated from the source electrode; a channel area formed in an area where the gate line and an active line of the active pattern overlap each other; and a gate line modifying unit formed in the channel area by changing a linear shape of the gate line.. .
Samsung Display Co., Ltd.


04/07/16
20160099256 

Semiconductor memory device and manufacturing same


According to one embodiment, a semiconductor memory device includes a substrate; a memory cell array including a plurality of memory cells and stacked on the substrate; a first transistor; an interlayer insulating layer covering the first transistor; and a first contact portion. The first transistor includes a first gate insulating film which is disposed on the substrate, a first gate electrode which is disposed on the first gate insulating film, and a first semiconductor layer which includes an upper surface at a higher position than an interface between the substrate and the first gate insulating film and a bottom surface at a deeper position than the interface between the substrate and the first gate insulating film.
Kabushiki Kaisha Toshiba


04/07/16
20160099251 

Semiconductor device


An insulating film, which is sandwiched between a gate electrode formed on an soi layer constituting an soi substrate and an epitaxial layer formed on the soi layer and including a high-concentration diffusion region and is formed in contact with a side wall of the gate electrode, is set as a target of dielectric breakdown in a write operation in an anti-fuse element.. .
Renesas Electronics Corporation


04/07/16
20160099249 

Integrated fin and strap structure for an access transistor of a trench capacitor


At least one dielectric pad layer is formed on a semiconductor-on-insulator (soi) substrate. A deep trench is formed in the soi substrate, and a combination of an outer electrode, a node dielectric, and an inner electrode are formed such that the top surface of the inner electrode is recessed below the top surface of a buried insulator layer of the soi substrate.
International Business Machines Corporation


04/07/16
20160099247 

Semiconductor devices with capacitors


A semiconductor device includes bottom electrodes two-dimensionally arranged on a substrate and transistors connected to the bottom electrodes, respectively. Each of the bottom electrodes may include first side surfaces facing each other in a first direction and second side surfaces facing each other in a second direction crossing the first direction.

04/07/16
20160099238 

Embedded package and method thereof


The present invention discloses anew embedded package comprising: a pre-mold lead frame with a plurality of chips attached thereon, where the molding material fills the voids of the lead frame, no that the lead frame is entirely solid; a plurality of pins arranged around the lead frame; a metal clip attached on and electrically connecting the chips together; first laminate layer which covers the chips, the lead frame, a metal clip and pins; conductive plug and extension formed to connect an electrode of a chip to a corresponding pin or to connect the chips together. The new embedded package of the invention with a three-dimensional stack capacity improves the thickness, thermal and electrical properties and the flexible power and logic hybrid design..
Alpha And Omega Semiconductor Incorporated


04/07/16
20160099229 

Semiconductor devices having through electrodes, semiconductor packages including the same, methods of manufacturing the same, electronic systems including the same, and memory cards including the same


A semiconductor device includes a substrate having a first surface and a second surface that are opposite to each other, a plurality of through electrodes penetrating the substrate and extending from the first surface to the second surface, front-side bumps disposed on the first surface and connected to odd-numbered through electrodes among the plurality of through electrodes, and backside bumps disposed on the second surface and connected to even-numbered through electrodes among the plurality of through electrodes. Related semiconductor packages, fabrication methods, electronic systems and memory cards are also provided..
Sk Hynix Inc.


04/07/16
20160099224 

Semiconductor device and manufacturing the same


A semiconductor device according to the present invention includes an insulating substrate having a circuit pattern, semiconductor elements bonded on the circuit pattern with a brazing material, and a wiring terminal bonded with a brazing material on an electrode provided on each of the semiconductor elements on an opposite side of the circuit pattern, in which a part of the wiring terminal is in contact with the insulating substrate, and insulated from the circuit pattern.. .
Mitsubishi Electric Corporation


04/07/16
20160099198 

Semiconductor package apparatus


A semiconductor package apparatus includes a lead frame, a first semiconductor chip, a second semiconductor chip, a first connecting element, and a second connecting element. The lead frame includes a power input plate, a ground plate, a phase plate, and a phase detection plate.
Ubiq Semiconductor Corp.


04/07/16
20160099193 

Semiconductor device


A semiconductor device includes: a semiconductor substrate having a main plane; a semiconductor element provided on the main plane of the semiconductor substrate; an electrode pad provided on the main plane of the semiconductor substrate and connected to the semiconductor element; a guard ring surrounding the semiconductor element and the electrode pad, and provided on the main plane of the semiconductor substrate; and an insulating film covering all region of a semiconductor of the main plane of the semiconductor substrate exposed inside the guard ring, wherein the insulating film is made of a water impermeable material.. .
Mitsubishi Electric Corporation


04/07/16
20160099188 

Semiconductor device with sensor potential in the active region


A semiconductor device includes semiconductor body region and a surface region, the semiconductor body region including a first conductivity type first semiconductor region type and a second conductivity type second semiconductor region. The semiconductor device further includes: a first load contact structure included in the surface region and arranged for feeding a load current into the semiconductor body region; a first trench extending into the semiconductor body region and having a sensor electrode and a first dielectric, the first dielectric electrically insulating the sensor electrode from the second semiconductor region; an electrically conductive path electrically connecting the sensor electrode to the first semiconductor region; a first semiconductor path, wherein the first semiconductor region is electrically coupled to the first load contact structure by at least the first semiconductor path; a sensor contact structure included in the surface region and arranged for receiving an electrical potential of the sensor electrode..
Infineon Technologies Ag


04/07/16
20160099180 

Method for manufacturing a semiconductor switching device with different local cell geometry


A method for manufacturing a semiconductor device includes providing a semiconductor substrate having an outer rim, an active area, and an edge termination region arranged between the active area and the outer rim, and forming a plurality of switchable cells in the active area. Each of the switchable cells includes a body region, a gate electrode structure, and a source region.
Infineon Technologies Austria Ag


04/07/16
20160099175 

Semiconductor structure including a through electrode, and forming the same


A semiconductor structure including a through electrode includes a lamination body including at least three layers, including respective vertically aligned electrode parts, the electrode part on the surface of an uppermost layer and including an aperture, the electrode part of the intermediate layer having an aperture smaller than the aperture of the uppermost layer; a through-hole extending from the aperture of the electrode part on the uppermost layer to the surface of the electrode part on a lowermost layer, the through-hole having a depressed part on a side wall thereof between the electrode parts therein; an insulating layer disposed on the entire side wall in the through-hole at a part other than on surfaces of the electrode parts; and a conductive material filling the through-hole from the surface of the electrode part on the lowermost layer to the surface of the electrode part on the uppermost layer.. .
International Business Machines Corporation


04/07/16
20160099170 

Methods of forming a stack of electrodes and three-dimensional semiconductor devices fabricated thereby


Provided are methods of forming a stack of electrodes and three-dimensional semiconductor devices fabricated thereby. The device may include electrodes sequentially stacked on a substrate to constitute an electrode structure.

04/07/16
20160099161 

Plasma etching method and plasma etching apparatus


A plasma etching method includes a holding step of holding a substrate, a processing gas supplying step of supplying processing gas to a space between the holding unit and an electrode plate facing the holding unit within the processing chamber, and a high frequency power supplying step of converting the processing gas supplied to the space from the plurality of supply parts into plasma by supplying a high frequency power from a high frequency power supply to at least one of the holding unit and the electrode plate. The processing gas supplying step includes controlling an adjustment unit configured to adjust a supply condition for supplying processing gas with respect to each of the plurality of supply parts such that the supply condition that is adjusted varies between a first position and a second position..
Tokyo Electron Limited


04/07/16
20160099132 

Ultra-high speed anisotropic reactive ion etching


A system and method for reactive ion etching (rie) system of a material is provided. The system includes a plasma chamber comprising a plasma source and a gas inlet, a diffusion chamber comprising a substrate holder for supporting a substrate with a surface comprising the material and a gas diffuser, and a source of a processing gas coupled to the gas diffuser.
The Penn State Research Foundation


04/07/16
20160099129 

Blanking aperture array and charged particle beam writing apparatus


In one embodiment, a blanking aperture array includes a substrate including an upper surface on which an insulating film is provided, a plurality of blanking aperture portions provided in the substrate, each of the plurality of blanking aperture portions including one of penetration holes, through which a predetermined beam passes, and one of blanking electrodes and one of ground electrodes which are provided on the insulating film, and the blanking electrodes and the ground electrodes configured to perform blanking deflection of the predetermined beam, and a high-resistivity film provided so as to cover the insulating film and at least part of the ground electrodes, the high-resistivity film having an electric resistance that is higher than an electric resistance of the ground electrodes and lower than an electric resistance of the insulating film.. .
Nuflare Technology, Inc.


04/07/16
20160099128 

X-ray tube


According to one embodiment, an x-ray tube includes an elongated anode target, a cathode, and a vacuum envelope. The cathode includes an electron emission source and a converging electrode including a trench portion.
Toshiba Electron Tubes & Devices Co., Ltd.


04/07/16
20160099124 

Planar cavity mems and related structures, methods of manufacture and design structures


A method of forming a micro-electro-mechanical system (mems) includes forming a lower electrode on a first insulator layer within a cavity of the mems. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode.
International Business Machines Corporation


04/07/16
20160099116 

Methods and the production of capacitor with electrodes made of interconnected corrugated carbon-based network


The present invention provides a digital lighting processer (“dlp”) based light treatment system (“dlp-lts”) and methods to reduce portions of the carbon-based oxide film to an interconnected corrugated carbon-based network (iccn), in order to produce supercapacitors.. .

04/07/16
20160099112 

Systems, devices, and methods to reduce dielectric charging in micro-electro-mechanical systems devices


The present subject matter relates to devices, systems, and methods for isolation of electrostatic actuators in mems devices to reduce or minimize dielectric charging. A tunable component can include a fixed actuator electrode positioned on a substrate, a movable actuator electrode carried on a movable component that is suspended over the substrate, one or more isolation bumps positioned between the fixed actuator electrode and the movable actuator electrode, and a fixed isolation landing that is isolated within a portion of the fixed actuator electrode that is at, near, and/or substantially aligned with each of the one or more isolation bumps.
Wispry, Inc. .


04/07/16
20160099111 

Multilayer ceramic capacitor


In a multilayer ceramic capacitor, a ceramic body includes dielectric layers and inner electrodes stacked in a stacking direction, outer electrodes on the ceramic body and connected to the plurality of inner electrodes. When viewing a first cross section of the ceramic body parallel or substantially parallel to first and second side surfaces of the ceramic body and having the plurality of inner electrodes exposed, a connection proportion is about 30% to about 70% and is a proportion of a number of the inner electrodes connected to the outer electrodes to a number of all of the plurality of inner electrodes exposed at the first cross section, and when the first cross section is viewed, glass is present between one of the inner electrodes not connected to each of the outer electrodes, and each of the outer electrodes..
Murata Manufacturing Co., Ltd.


04/07/16
20160099110 

Conductive paste for external electrode, multilayer ceramic electronic component using the same, and manufacturing method thereof


A conductive paste for an external electrode, a multilayer ceramic electronic component using the same, and a manufacturing method of a multilayer ceramic electronic component are provided. The conductive paste for an external electrode includes first conductive particles containing a metal, second conductive particles formed of ceramic particles coated with silver (ag), and a thermosetting resin..
Samsung Electro-mechanics Co., Ltd.


04/07/16
20160099109 

Film capacitor


A film capacitor includes a stacked body formed by stacking metalized films in each of which a metal electrode is formed on a surface of a dielectric film, at least one of the dielectric films containing a high thermal conductive filler; and external electrodes formed at electrode forming ends provided at opposed positions in the stacked body. The stacked body includes a high thermal conductive portion in which a content of the high thermal conductive filler in the at least one dielectric film is relatively high, and a low thermal conductive portion in which the content of the high thermal conductive filler in the at least one dielectric film is relatively low, or the high thermal conductive filler is not contained.
Toyota Jidosha Kabushiki Kaisha


04/07/16
20160099108 

Multilayer ceramic capacitor


A multilayer ceramic capacitor has a capacitor body of laminate structure and a pair of external electrodes, and shaped roughly as a rectangular solid defined by length l, width w, and height h. This multilayer ceramic capacitor is such that the width w and height h meet the condition of “1.10≦h/w≦1.70.”.
Taiyo Yuden Co., Ltd.


04/07/16
20160099107 

Multilayer ceramic electronic component and board having the same


A multilayer ceramic electronic component may includes: a ceramic body including dielectric layers; an active layer including first and second internal electrodes disposed to be exposed to both end surfaces of the ceramic body in a length direction of the ceramic body, respectively, first floating electrodes overlapping the first and second internal electrodes while being spaced apart from each other in the thickness direction of the ceramic body, second floating electrodes each disposed to be spaced apart from the first and second internal electrodes, and first and second dummy electrodes disposed to be spaced apart from the first floating electrodes; upper and lower cover layers disposed upwardly and downwardly of the active layer, respectively; third and fourth dummy electrodes disposed to be exposed to both end surfaces of the ceramic body in the length direction of the ceramic body, respectively; and fifth dummy electrodes.. .
Samsung Electro-mechanics Co., Ltd.


04/07/16
20160099106 

Ceramic electronic component


A ceramic electronic component includes a laminated body including ceramic layers and conductor layers stacked alternately; and first and second external electrodes provided on portions of the laminated body. Each of the first and second external electrodes includes a sintered metal layer provided on the laminated body, a conductive resin layer covering the sintered metal layer, and a plated layer covering the conductive resin layer.
Murata Manufacturing Co., Ltd.


04/07/16
20160099105 

Multilayer ceramic electronic component and board having the same


A multilayer ceramic electronic component includes: a ceramic body including dielectric layers; an active part including first and second internal electrodes which are exposed to both end surfaces of the ceramic body in a length direction thereof, and floating electrodes which are partially overlapped with the first and second internal electrodes; upper and lower cover parts including the dielectric layers and disposed above and below the active part; dummy electrodes disposed in the upper and lower cover parts to be overlapped with the floating electrodes; and first and second external electrodes.. .
Samsung Electro-mechanics Co., Ltd.


04/07/16
20160099102 

Electronic component


An electronic component has a laminated body, a circuit element disposed in the laminated body, an electrostatic discharge element disposed in the laminated body, a circuit-element external electrode electrically connecting the electrostatic discharge element and the circuit element, and a grounding external electrode connected to the electrostatic discharge element for electrically connecting the electrostatic discharge element to the ground. The electrostatic discharge element is disposed closer to a first end surface of the laminated body as compared to the circuit element.
Murata Manufacturing Co., Ltd.


04/07/16
20160099100 

Chip component and manufacturing method thereof


There are provided a chip component and a manufacturing method thereof. The chip component includes: a ceramic body including a plurality of ceramic layers, each of which including external electrode patterns provided by filling intagliated recess portions with a conductive material, the intagliated recess portions being disposed to be spaced apart from one another; an internal coil unit positioned within the ceramic body and including internal conductive patterns disposed on the plurality of ceramic layers; and external electrodes, each of which is provided by connecting the external electrode patterns to each other..
Samsung Electro-mechanics Co., Ltd.


04/07/16
20160099051 

Resistance change memory and forming the resistance change device


A resistance change memory has a resistance change device and a control circuit for controlling application of voltage to the resistance change device. The resistance change device has a first electrode, a second electrode, and a resistance change layer interposed between the first electrode and the second electrode.
Renesas Electronics Corporation


04/07/16
20160099036 

Magnetic tunnel junction memory device


A magnetic-assist, spin-torque transfer magnetic tunnel junction device and a method for performing a magnetic-assist, spin-torque-transfer write to the device are disclosed. In an exemplary embodiment, the magnetic tunnel junction device includes a first electrode, a pinned layer disposed on the first electrode, a free layer disposed on the pinned layer, and a barrier layer disposed between the pinned layer and the free layer.
Taiwan Semiconductor Manufacturing Company, Ltd.




Electrode topics: Phosphoric Acid, Internal Combustion Engine, Carbon Atoms, Porous Carbon, Double Layer Capacitor, Graphene Oxide, Aqueous Solution, Lithium Ion, Exhaust Gas, Soot Sensor, Combustion, Calibration, Electronic Apparatus, Electrical Signal, Electric Conversion

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