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Electrode patents

      

This page is updated frequently with new Electrode-related patent applications.




 Noise reducing electronic component patent thumbnailNoise reducing electronic component
A noise reducing electronic component is used as mounted on a circuit board. The noise reducing electronic component includes: a floating electrode disposed so as to be capacitively coupled to a ground conductor of the circuit board; a radiation element connected to the floating electrode; and a shielding member to shield electromagnetic waves radiated from the radiation element.
Murata Manufacturing Co., Ltd.


 Charged particle beam radiation system, synchrotron, and beam ejection method therefor patent thumbnailCharged particle beam radiation system, synchrotron, and beam ejection method therefor
When controlling the ejection of a charged particle beam from a synchrotron, a radiofrequency voltage is applied, which serves as the radio-frequency voltage to be applied to an ejection radio-frequency electrode equipping the synchrotron, and which is constituted by a first radio-frequency voltage for increasing an oscillation amplitude in such a way as to exceed a stable limit in order to eject to the exterior of the synchrotron a beam that circles inside the synchrotron, and a second radio-frequency voltage for preferentially ejecting a charged particle beam that circles in the vicinity of the stable limit, with the amplitude value of the second radio-frequency voltage being controlled in such a way that the amplitude value is 0 prior to the beam ejection start, the amplitude value increases gradually from the beam ejection start, and, once a predetermined amplitude value has been reached, this value is maintained.. .
Hitachi, Ltd.


 Method to set up a wireless communication connection and electronic device utilizing the same patent thumbnailMethod to set up a wireless communication connection and electronic device utilizing the same
An electronic device includes a processor and a wireless communication module, the processor transmits one or more touch link messages via at least one transmitting electrode of a touch panel device to another electronic device in proximity to the electronic device and receives one or more touch link messages via at least one receiving electrode of the touch panel device from the other electronic device to obtain essential information for establishing a wireless communication connection with the other electronic device. The wireless communication module establishes a wireless communication connection with the other electronic device according to the essential information..
Mediatek Inc.


 Displacement detecting apparatus, lens barrel, and image pickup apparatus patent thumbnailDisplacement detecting apparatus, lens barrel, and image pickup apparatus
A displacement detecting apparatus includes a first electrode having a base electrode segment and a plurality of detecting electrode segments, a second electrode having a plurality of periodically arranged electrode segments, and displaceable relative to the first electrode, and a detector configured to detect a displacement of the second electrode relative to the first electrode based on a capacitance between the first electrode segment and the second electrode. An area of an overlapping region between the base electrode segment and the electrode segments in the second electrode is constant..
Canon Kabushiki Kaisha


 Proximity sensor assembly having interleaved electrode configuration patent thumbnailProximity sensor assembly having interleaved electrode configuration
A proximity switch assembly and method for detecting activation of a proximity switch assembly is provided. The assembly includes a plurality of proximity switches each having a proximity sensor providing a sense activation field.
Ford Global Technologies, Llc


 Elastic wave device patent thumbnailElastic wave device
An elastic wave device includes an idt electrode disposed on a linbo3 substrate and an aluminum nitride film or a silicon nitride film is stacked to cover the idt electrode and utilizes a leaky elastic wave. The idt electrode includes a metal selected from a group consisting of cu, al, au, pt, and ni.
Murata Manufacturing Co., Ltd.


 Resonator package and  manufacturing the same patent thumbnailResonator package and manufacturing the same
A resonator package and a method of manufacturing the same are provided. The method of manufacturing a resonator package involves etching a lower electrode with a hardmask, in which only a portion of a thickness of the lower electrode is etched to shape the lower electrode..
Samsung Electro-mechanics Co., Ltd.


 Rf amplifier output circuit device with integrated current path, and methods of manufacture thereof patent thumbnailRf amplifier output circuit device with integrated current path, and methods of manufacture thereof
A device includes multiple ceramic capacitors and a current path structure. A first ceramic capacitor includes a first ceramic material between first and second electrodes.
Freescale Semiconductor, Inc.


 Instrumentation amplifier with digitally programmable input capacitance cancellation patent thumbnailInstrumentation amplifier with digitally programmable input capacitance cancellation
An instrumentation amplifier that includes input capacitance cancellation is provided. The architecture includes programmable capacitors between the input stage and a current feedback loop of the instrumentation amplifier to cancel input capacitances from electrode cables and a printed circuit board at the front end.
Northeastern University


 Electricity-generating element unit, electric generator, footwear, and flooring material patent thumbnailElectricity-generating element unit, electric generator, footwear, and flooring material
An electricity-generating element unit including a plurality of electricity-generating elements, each of the plurality of electricity-generating elements including a first electrode, an intermediate layer, and a second electrode disposed with the intermediate layer being between the first electrode and the second electrode, and a coupling unit coupling the plurality of electricity-generating elements to each other, wherein when an external force is applied to at least one of the plurality of electricity-generating elements to bring the first electrode and the second electrode of the at least one of the plurality of electricity-generating elements close to each other, a distance between the first electrode and the second electrode of the electricity-generating element or each of the electricity-generating elements to which an external force is not applied is increased by the coupling unit.. .

Frictional electricity-generating device and a manufacturing the same, electronic apparatus and wearable apparatus

The present disclosure provides a frictional electricity-generating device and a method for manufacturing the same, an electronic apparatus and a wearable apparatus. The frictional electricity-generating device comprises at least one friction unit, which comprises a first conductive electrode, an organic friction unit and a second conductive electrode.
Boe Technology Group Co., Ltd.

Switching device

A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an sic semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the sic semiconductor layer, and a second electrode arranged to be in contact with the sic semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.. .
Rohm Co., Ltd.

Magnetic sheet for wireless power charging system

A magnetic sheet for a wireless power charging system includes an electrode layer, first and second magnetic layers disposed on the electrode layer, and first and second adhesive layers disposed on the electrode layer. The first adhesive layer is disposed between the electrode layer and the first magnetic layer, and the second adhesive layer is disposed between the first and second magnetic layers.
Samsung Electro-mechanics Co., Ltd.

Battery protection integrated circuit, battery protection apparatus and battery pack

A battery protection integrated circuit for protecting a secondary battery by controlling a charge or discharge operation of the secondary battery includes a power supply terminal connected to a positive electrode of the secondary battery; a ground terminal connected to a negative electrode of the secondary battery; an input terminal connected to a negative terminal coupled to ground of a load; a control terminal at which a control signal is input, wherein the control signal has a voltage level with reference to a potential at the negative terminal; a signal detection circuit configured to detect a relative voltage level of the control signal input at the control terminal with reference to a potential at the input terminal; and a control circuit configured to control open/close of a switching circuit connected to a charge or discharge path between the negative electrode and the negative terminal based on the control signal.. .
Mitsumi Electric Co., Ltd.

Composite electronic component

A coil portion providing a common mode choke coil and a protection element portion providing esd protection elements are disposed so as to be aligned in a lamination direction of a component body. The esd protection elements are composed of a ground electrode and discharge electrodes each located so as to be spaced apart from the ground electrode at a predetermined interval.
Murata Manufacturing Co., Ltd.

Connectors for smart windows

This disclosure provides connectors for smart windows. A smart window may incorporate an optically switchable pane.
View, Inc.

Window glass for vehicle and glass antenna

There is provided a window glass for a vehicle, the window glass including a glass antenna for transmitting and receiving communication waves. The glass antenna includes a pair of electrodes that are a ground electrode and a power feeding electrode; a first antenna element connected to the power feeding electrode; a second antenna element connected to the power feeding electrode, the second antenna element extending downward; a third antenna element connected to the power feeding electrode, the third antenna element extending in a direction that differs from that of the second antenna element; a fourth antenna element, one end of the fourth antenna element being connected to an end portion of the third antenna element; and a fifth antenna element, one end of the fifth antenna element being connected to the end portion of the third antenna element and the one end of the fourth antenna element..
Asahi Glass Company, Limited

Lithium air battery and manufacturing the same

A lithium air battery includes: a lithium negative electrode; a positive electrode; and an ion conductive oxygen-blocking film which is disposed on the lithium negative electrode, wherein the ion conductive oxygen-blocking film includes a first polymer including a polyvinyl alcohol or a polyvinyl alcohol blend, and a lithium salt, and wherein the ion conductive oxygen-blocking film has an oxygen transmission rate of about 10 milliliters per square meter per day to about 10,000 milliliters per square meter per day. Also a method of manufacturing a lithium air battery is disclosed..
Samsung Electronics Co., Ltd.

Immersible gaseous oxidant cathode for electrochemical cell system

An electrochemical cell system is configured to utilize an oxidant reduction electrode module containing an oxidant reduction electrode mounted to a housing to form a gaseous oxidant space therein that is immersed into the ionically conductive medium. A fuel electrode is spaced from the oxidant reduction electrode, such that the ionically conductive medium may conduct ions between the fuel and oxidant reduction electrodes to support electrochemical reactions at the fuel and oxidant reduction electrodes.
Fluidic, Inc.

Charge-free mixing entropy battery

Described herein is a mixing entropy battery including a cationic electrode for sodium ion exchange and an anionic electrode for chloride ion exchange, where the cationic electrode includes at least one prussian blue material, and where the mixing entropy battery is configured to convert salinity gradient into electricity.. .
The Board Of Trustees Of The Leland Stanford Junior University

Protective layers for electrochemical cells

Articles and methods including layers for protection of electrodes in electrochemical cells are provided. As described herein, a layer, such as a protective layer for an electrode, may comprise a plurality of particles (e.g., crystalline inorganic particles, amorphous inorganic particles).
Basf Se

Wound electrode group and nonaqueous electrolyte battery

In general, according to one embodiment, a wound electrode group wound in a flat-shape is provided. The laminate includes a positive electrode, a negative electrode, and a separator provided between the positive electrode and the negative electrode.
Kabushiki Kaisha Toshiba

Porous separator for fuel cell

A porous separator for a fuel cell is provided and features the shape of a passage aperture formed in a flow field plate. The modified shape of the passage aperture minimizes destruction of a gas diffusion layer or a membrane electrode assembly attributable to stress concentration.
Kia Motors Corporation

Separator for fuel cell and manufacturing fuel cell stack

A separator for fuel cell is used for a fuel cell and is placed to face a membrane electrode assembly. The separator includes a separator center area placed to face a power generation area of the membrane electrode assembly; a peripheral region extended from the separator center area toward an outer edge; a cooling medium supply manifold and a cooling medium discharge manifold provided in the peripheral region; a fluid flow path area extended from the cooling medium supply manifold through the separator center area to the cooling medium discharge manifold; a sealing gasket provided in the peripheral region and placed to surround the fluid flow path area; and a gasket for peel test provided outside of the fluid flow path area and configured to receive an external force applied as a test for evaluation of an adhesive state of the gasket.
Toyota Jidosha Kabushiki Kaisha

Lithium primary battery

A lithium primary battery including a negative electrode including metal lithium and/or a lithium alloy, a positive electrode including a positive electrode active material, a separator interposed between the negative electrode and the positive electrode, and a nonaqueous electrolyte. The positive electrode active material includes fe2(so4)3.
Panasonic Intellectual Property Management Co., Ltd.

Carbon-supported catalyst

The present invention is to provide such a carbon-supported catalyst that an activity expected from a catalytic activity by rotating disk electrode (rde) evaluation is maintained even after the formation of a membrane electrode assembly (mea). Disclosed is a carbon-supported catalyst wherein the carbon-supported catalyst includes fine catalyst particles that have a palladium-containing particle and a platinum-containing outermost layer covering at least part of the palladium-containing particle, and a carbon support supporting the fine catalyst particles, and wherein, in a cyclic voltammogram that is obtained by measuring, in an acid solution, the carbon-supported catalyst applied to a measurement electrode made of an electroconductive material, the proportion of the area of a hydrogen adsorption region that appears in a reduction current region to the total area of the hydrogen adsorption region and a hydrogen occlusion region that appears in the reduction current region, is 29% to 36%..
Toyota Jidosha Kabushiki Kaisha

Catalyst for air electrode for metal-air secondary battery and air electrode

Where a represents ca, sr, ba, or a rare earth element(re), b1 is a metal atom that forms a tetrahedral structure together with oxygen atoms, and b2 is a metal atom that forms an octahedral structure together with oxygen atoms. Disclosed are an air electrode for a metal-air secondary battery that includes the catalyst, and a metal-air secondary battery that includes an air electrode including the catalyst, a negative electrode including a negative electrode active material, and an electrolyte intervening between the air electrode and the negative electrode..

Lithium secondary battery and conductive assistant used in same

A lithium secondary battery, including: a hydrofluoric acid-containing electrolytic solution; an electrode; and a conductive assistant, in which the conductive assistant (1) contains a substance that is poorly soluble in the hydrofluoric acid-containing electrolytic solution, the substance including one or more kinds selected from transition metal compounds, and (2) contains a substance that is soluble in the hydrofluoric acid-containing electrolytic solution, the substance having a total metal mass of 0 mass % or more and 0.003 mass % or less with respect to a total mass of the electrode; and a conductive assistant, including: a substance that is poorly soluble in a hydrofluoric acid-containing electrolytic solution; and a substance that consumes hydrofluoric acid, the conductive assistant being substantially free, or including 1 mass % or less with respect to a total mass thereof, of a substance that is soluble in the hydrofluoric acid-containing electrolytic solution.. .
Showa Denko K. K.

Negative electrode for non-aqueous electrolyte secondary cell

Adhesion between particles in a negative electrode for non-aqueous secondary cells is improved for better cycle characteristics. A negative electrode for non-aqueous secondary cells contains silicon-containing particles and graphite particles as negative electrode active materials.
Sanyo Electric Co., Ltd.

Electrode, producing the same, battery, and electronic device

A battery is provided including a positive electrode, a negative electrode, and an electrolyte layer between the positive electrode and the negative electrode. At least one of the positive electrode and the negative electrode includes at least one kind of an inorganic binder that includes an oxide of at least one kind of element selected from the group including bismuth (bi), zinc (zn), boron (b), silicon (si) and vanadium (v)..
Sony Corporation

Organic active materials for rechargeable battery

An organic active material, having good energy density and electrochemical stability, for use in an electrochemical cell is disclosed. Electrochemical cells that employ the organic active material are also disclosed.
Toyota Motor Engineering & Manufacturing North America, Inc.

Electrode material, manufacturing electrode material, electrode, and lithium ion secondary battery

An electrode material includes electrode material primary particles including first electrode material primary particles having a particle size in a range of 400 nm to 900 nm, and second electrode material primary particles having a particle size in a range of equal to or greater than 300 nm and less than 400 nm. In a case where the number of the first electrode material primary particles is set as a, and the number of the second electrode material primary particles is set as b when observing a visual field of the electrode material in a range of 3.0 μm×2.4 μm at a magnification of 30,000 times by using a scanning electron microscope, a value of b/a is 3 to 12.
Sumitomo Osaka Cement Co., Ltd

Nonaqueous electrolyte secondary battery

A nonaqueous electrolyte secondary battery according to an embodiment of the present disclosure includes: a negative electrode including, as a negative electrode active material, amorphous carbon coated graphite with charge-discharge efficiency of 93.5% or more; and a positive electrode including a positive electrode active material including a mixture containing a lithium manganese oxide (lmo) and a lithium nickel oxide (lno) at a mass ratio (lmo:lno) of 20:80 to 90:10.. .
Automotive Energy Supply Corporation

Positive electrode active material for secondary batteries and lithium ion secondary battery using the same

Provided is a positive electrode active material for lithium ion secondary batteries, having a crystal structure containing a layered li2mno2 structure with a high theoretical electrical capacity as a basic skeleton, and having both a high theoretical electrical capacity and a high open-circuit voltage by increasing an open-circuit voltage to a value of more than 2 v by replacing a part of manganese ions with calcium ions by adding the calcium ions. That is, a positive electrode active material for secondary batteries mainly containing a compound represented by a chemical composition formula li2-xmn1-ycayo2, and an electrode and a battery including the same are realized.
Hitachi, Ltd.

Titanate compound, alkali metal titanate compound and producing same, and power storage device using titanate compound and alkali metal titanate compound as active material

Provided is a titanate compound capable of further increasing the capacity of a power storage device when used as an electrode active material thereof. The titanate compound according to the present invention includes at least 60%, based on the number thereof, of particles having an anisotropic shape and a specific surface area of 10-30 m2/g as measured by a nitrogen adsorption bet one-point method, and having a long-axis diameter (l) in the range of 0.1<l≦0.9 μm as measured by electron microscopy.
Ishihara Sangyo Kaisha, Ltd.

Electrode active material, electrode and energy storage device including the same, and preparing the electrode active material

Disclosed is an electrode active material including nanostructures including boron-doped alumina. An electrode including the nanostructures, an energy storage device including the electrode, and a method of preparing the electrode active material are also disclosed..
Samsung Electronics Co., Ltd.

Metal hydride alloys with improved rate performance

Methods of preparing improved metal hydride alloy materials are provided. The alloys include a mixture of at least four of vanadium, titanium, nickel, chromium, and iron.
California Institute Of Technology

Electrode structure for lithium secondary battery and lithium secondary battery having the electrode structure

There is provided an electrode for a lithium secondary battery. The electrode include a current collector; nanoparticles distributed on a surface of the current collector, each of the nanoparticles including a transition metal or an oxide of the transition metal; and an active material layer disposed on a surface of the current collector having the nanoparticles distributed thereon.
Research & Business Foundation Sungkyunkwan University

Composite electrode material and manufacturing the same

A composite electrode material and a method for manufacturing the same, a composite electrode comprising the said composite electrode material and a method for manufacturing the same, and a lithium-based battery comprising the said composite electrode are disclosed. Specifically, a composite electrode material of the present invention comprises a core or a core with a surface covered by a buffer layer, preferably a conductive diamond film, wherein a material of the core is at least one selected from the group consisting of graphite, sn, sb, si, and ge; and a graphene nano-wall layer grown from the core or the conductive diamond film covering the core..
National Cheng Kung University

Negative electrode active material for negative electrode material of non-aqueous electrolyte secondary battery, negative electrode for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery

A negative electrode active material for a negative electrode material of a non-aqueous electrolyte secondary battery, includes a silicon-based material expressed by siox where 0.5≦x≦1.6 and either or both of a crystalized fluorine compound and a compound containing —cf2—cf2— units in at least a part of a surface layer of the negative electrode active material, the silicon-based material containing at least one of li6si2o7, li2si3o5, and li4sio4. There can be provided a negative electrode active material that can increase the battery capacity and improve the cycle performance and initial charge and discharge performance when used for a lithium-ion secondary battery, as well as a lithium-ion secondary battery having a negative electrode using this negative electrode active material..
Shin-etsu Chemical Co., Ltd.

Electrode, power storage device, and electronic device

To provide a power storage device with a high capacity. To provide a power storage device with a high energy density.
Semicondudor Energy Laboratory Co., Ltd.

Power storage device manufacturing method, manufacturing device, liquid injection device, and liquid injection method

A power storage device manufacturing method that seals a case housing an electrode assembly of a power storage device and injects an electrolyte into the case after sealing, the method includes a step accompanied by a pressure operation of increasing or reducing a pressure inside the case after sealing the case, and a process performed in a state of turning the inside of the case to the pressure higher or lower than an atmospheric pressure, and an internal space capacity of the case is measured based on a change with time of the pressure inside the case caused by the pressure operation inside the case.. .
Kabushiki Kaisha Toyota Jidoshokki

Battery pack

Provided is a battery pack. The battery pack includes a battery module including first and second battery cells that are disposed adjacent to each other, wherein first and second electrode terminals are disposed on each of the first and second electrode terminals, a fuse part including a first fuse connecting the second electrode terminal of the first battery cell to the first electrode terminal of the second battery cell, and a switching device including a first switch disposed outside a top surface of the first battery cell of the battery module and connected to the first fuse and a second switch disposed below the first switch and connected to the second electrode terminal of the second battery cell..
Lg Chem, Ltd.

Wiring module and electrical storage module

An insulating cover 47 of a wiring module 20 includes a first cover portion 48 displaceable between a first closing position for covering an inter-electrode connecting member 21 and a first opening position for exposing the inter-electrode connecting member 21 and a second cover portion 57 connected to the first cover portion 48 and rotatable between a second closing position for covering an end connecting member 23 and a second opening position for exposing the end connecting member 23 with the first cover portion 48 set at the first closing position. The first cover portion 48 includes an engaging portion 55 and the second cover portion 57 includes an engaged portion 61 for holding the second cover portion 57 in position with respect to the first cover portion 48 by being engaged with the engaging portion 55..
Sumitomo Electric Industries, Ltd.

Multi-phase electrolyte lithium batteries

electrode assemblies for use in electrochemical cells are provided. The negative electrode assembly includes negative electrode active material and an electrolyte chosen specifically for its useful properties in the negative electrode.
Seeo, Inc

Mechanical providing edge support and protection in semi-solid electrodes

Embodiments described herein relate generally to electrodes for electrochemical cells, the electrodes including an electrode material disposed on a current collector. In some embodiments, an electrode includes an edge protection barrier member on a perimeter of a surface of the current collector.

Rechargeable battery

Disclosed is a rechargeable battery including: an electrode assembly; a case having an opening at one side and including the electrode assembly; and a cap assembly including a cap plate for closing and sealing an opening of the case, wherein the cap assembly includes a vent portion that is welded with weaker welding strength in at least some of a boundary between the cap plate and the case than the rest.. .
Samsung Sdi Co., Ltd.

Method of manufacturing organic light emitting display panel

A method of manufacturing an organic light emitting display panel, the method including: providing a pixel defined by an intersection of one of a plurality of data lines and one of a plurality of gate lines, the providing the pixel including: providing a transistor, providing a storage capacitor including: a first electrode, and a second electrode, and providing a semiconductor layer, providing a first plate partially overlapping the semiconductor layer in the pixel, the providing a first plate including: providing a gate portion of the transistor, and providing a capacitor-forming portion including the first electrode of the storage capacitor, and providing a second plate on the first plate in the pixel, the second plate including the second electrode of the storage capacitor, the second plate not overlapping the semiconductor layer.. .
Lg Display Co., Ltd.

Organic light-emitting display device

An organic light-emitting display device that includes a substrate, first and second electrodes facing each other on the substrate, an organic light-emitting layer between the first and second electrodes, a thin-film encapsulation (tfe) film on the second electrode, a reflection reduction layer on the tfe film, and a refraction adjustment layer between the reflection reduction layer and the organic light-emitting layer.. .
Samsung Display Co., Ltd.

Light-emitting element, lighting device, light-emitting device, and electronic device

A light-emitting element includes a first electrode; a first light-emitting layer over the first electrode, containing a first phosphorescent compound and a first host material; a second light-emitting layer over the first light-emitting layer, containing a second phosphorescent compound and a second host material; a third light-emitting layer over the second light-emitting layer, containing a third phosphorescent compound and a third host material; and a second electrode over the third light-emitting layer. Between peaks of emission spectra of the first, second, and third phosphorescent compounds, the peak of the emission spectrum of the second phosphorescent compound is on the longest wavelength side and that of the emission spectrum of the third phosphorescent compound is on the shortest wavelength side.
Semiconductor Energy Laboratory Co., Ltd.

Top-emitting white organic light emitting diode device, manufacturing the same, and display apparatus

The present disclosure provides a top-emitting white organic light emitting diode (oled) device, a method for manufacturing the same and a display apparatus. The oled device includes a plurality of pixel units on a substrate, wherein each pixel unit includes a first electrode layer, an organic layer and a second electrode layer arranged subsequently on the substrate from bottom up, and the organic layer in each pixel unit includes a gradually-varied cavity length, and the gradually-varied cavity length corresponds to a range from a wavelength of red light to a wavelength of blue light..
Boe Technology Group Co., Ltd.

Light-emitting element, light-emitting device, electronic device, lighting device, and heterocyclic compound

A light-emitting element with high heat resistance and high emission efficiency is provided. A novel heterocyclic compound that can be used in such a light-emitting element is provided.
Semiconductor Energy Laboratory Co., Ltd.

Oled curved-surface display panel and manufacturing method thereof, and display device

An oled curved-surface display panel is provided. The display panel includes a second transparent electrode, an organic luminescent layer, a first transparent electrode, and a reflective electrode, wherein the second transparent electrode is closer to a display side than the first transparent electrode, and wherein a thickness of the first transparent electrode increases from a middle portion of the first transparent electrode to an edge portion of the first transparent electrode..
Boe Technology Group Co., Ltd.

Light-emitting element, light-emitting device, electronic device, and lighting device

A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided.
Semiconductor Energy Laboratory Co., Ltd.

Method of manufacturing light-emitting display device and light-emitting display device manufactured using the method

A method of manufacturing a light-emitting display device, the method including forming a first electrode on a substrate, the substrate including a plurality of pixel regions divided by a non-pixel region, in each of the pixel regions; forming a pixel defining layer, the pixel defining layer having a plurality of pixel openings, each of the pixel openings exposing the first electrode, on the substrate; forming a hole injection layer on the first electrode; forming a lyophilic layer on the hole injection layer to completely overlap the hole injection layer; forming a hole transport layer on the lyophilic layer; forming a light-emitting layer on the hole transport layer; and forming a second electrode on the light-emitting layer.. .
Samsung Display Co., Ltd.

Memristor devices with a thermally-insulating cladding

A memristor device with a thermally-insulating cladding includes a first electrode, a second electrode, a memristor, and a thermally-insulating cladding. The memristor is coupled in electrical series between the first electrode and the second electrode.
Hewlett Packard Enterprise Development Lp

Non-stoichiometric resistive switching memory device and fabrication methods

Providing for a resistive switching memory device is described herein. By way of example, the resistive switching memory device can comprise a bottom electrode, a conductive layer, a resistive switching layer, and a top electrode.
Crossbar, Inc.

Sacrificial shorting straps for superconducting qubits

A technique relates to protecting a tunnel junction. A first electrode paddle and a second electrode paddle are on a substrate.
International Business Machines Corporation

Sacrificial shorting straps for superconducting qubits

A technique relates to protecting a tunnel junction. A first electrode paddle and a second electrode paddle are on a substrate.
International Business Machines Corporation

Light-emitting element

A light-emitting element includes a semiconductor layered body comprising: an n-type semiconductor layer, and p-type semiconductor layer; an insulating film disposed on the semiconductor layered body and defining at least one p-side opening above the p-type semiconductor layer and a plurality of n-side openings exposing the n-type semiconductor layer; an n-side electrode disposed on the insulating film and comprising a plurality of first n-contact portions each electrically connected to the n-type semiconductor layer through one of the plurality of n-side openings; a p-side electrode electrically connected to the p-type semiconductor layer through the at least one p-side opening; a p-side post electrode disposed on the p-side electrode; and an n-side post electrode disposed on the n-side electrode. A total area of one or more first n-contact portions located on the second side is smaller than a total area of one or more first n-contact portion located on the first side..
Nichia Corporation

Light-emitting diode and manufacturing light-emitting diode

Disclosed are a light-emitting diode and a method for manufacturing a light-emitting diode. The method includes: a base layer; a circuit layer formed on the base layer; a light-emitting chip formed on the circuit layer; electrode pads formed on the base layer and electrically connected to the light-emitting chip so that the electrode pads and the circuit layer and the light-emitting chip are spaced from each other by first spacing distances and the electrode pads and the circuit layer and the light-emitting chip define therebetween first grooves, where an altitude of the electrode pad is equal to an altitude of the light-emitting chip; and a phosphor powder contained package layer formed on the light-emitting chip and the electrode pads and filled into the first grooves between the electrode pads and the circuit layer to form a uniform dome shape..
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Semiconductor light emitting device

Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; and a first electrode which is formed on an exposed region of the first semiconductor layer created by mesa etching portions of the second semiconductor layer, the active layer and the first semiconductor layer, and includes a contact layer in contact with the first semiconductor layer, a reflective layer formed on the contact layer, while facing an exposed region of the active layer created by mesa etching and reflecting light, and an anti-rupture layer formed on the reflective layer.. .
Semicon Light Co., Ltd.

Light emitting diode and light emitting diode package

A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer..
Seoul Viosys Co., Ltd.

Light-emitting device

A light-emitting device includes: a light-emitting stack including a first side, a second side opposite to the first side, a third side connecting the first side and the second side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, wherein the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode including a first section extended from the first electrode pad in a direction away from the third side, and a second section connecting to the first section and perpendicular to the first side; wherein a distance between the first electrode pad and the third side is smaller than a distance between the second electrode pad and the third side.. .
Epistar Corporation

Semiconductor light-emitting element and semiconductor light-emitting device

A semiconductor light-emitting element comprises: a semiconductor structure layer including a first semiconductor layer having a first conductivity type, a light-emitting layer and a second semiconductor layer having a second conductivity type opposite to the first conductivity type being laminated in sequence; a first electrode including a first electrode layer formed on the first semiconductor layer and a first contact electrode connected to the first electrode layer at a position displaced from a center of the first electrode layer in an intra-layer direction of the first electrode layer; and a second electrode extending through the first electrode layer, the first semiconductor layer and the light-emitting layer and being connected to the second semiconductor layer.. .
Stanley Electric Co., Ltd.

Semiconductor light emitting device

A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat.
Nichia Corporation

Solar cell module and solar cell module manufacturing method

A solar cell module is provided with: a plurality of solar cell elements each having a surface; a light diffusion portion provided in an outer peripheral area of the surface; and connection members which connect the plurality of solar cell elements. The outer peripheral area has restricted areas where formation of the light diffusion portion is restricted, in a part thereof, and the restricted areas are provided in positions where the outer peripheral area and the connection members intersect.
Panasonic Intellectual Property Management Co., Ltd.

Solar cell structure and manufacturing the same

A solar cell structure is disclosed, which includes a solar cell array, including multiple solar cells arranged in parallel, wherein each solar cell includes a first semiconductor layer, a second semiconductor layer under the first semiconductor layer, top electrodes and bottom electrodes formed on surfaces of the first and second semiconductor layers, respectively; a top wire group on top of the solar cell array wherein each wire connects each of the multiple solar cells; a bottom wire group under the solar cell array wherein each wire connects each of the multiple solar cells and is placed away from the wires of the top wire group; and conductive adhesive on top of the top electrodes and on top of the bottom electrodes, being sandwiched between the top wire group and the solar cell array as well as between the bottom wire group and the solar cell array.. .
Sunovel Suzhou Technologies Ltd.

Solar cell module and solar cell module manufacturing method

A solar cell element includes a plurality of finger electrodes and a bus bar electrode on a surface thereof. A light diffuser is provided in an outer circumferential region of the surface.
Panasonic Intellectual Property Management Co., Ltd.

Solar cell and solar cell module

A solar cell and a solar cell module are disclosed. The solar cell includes a semiconductor substrate containing a crystalline silicon material, a first conductive region on a back surface of the semiconductor substrate, a second conductive region positioned in a portion except the first conductive region from the back surface of the semiconductor substrate and having a conductive type opposite the first conductive region, a first electrode connected to the first conductive region, and a second electrode connected to the second conductive region.
Lg Electronics Inc.

Method for manufacturing thin-film solar cell and thin-film solar cell

The present disclosure provides a method for manufacturing a thin-film solar cell, and the thin-film solar cell. The method includes steps of: forming a first electrode on a substrate; forming an n-type doped layer and an intrinsic semiconductor film on the first electrode; doping ions into the intrinsic semiconductor film, and subjecting the ion-doped intrinsic semiconductor film to activation treatment using an excimer laser annealing (ela) process, so as to form a p-type doped layer at an upper layer of the intrinsic semiconductor film; and forming a second electrode on the p-type doped layer..
Boe Technology Group Co., Ltd.

Semiconductor device including two-dimensional material, and manufacturing the semiconductor device

Example embodiments relate to semiconductor devices including two-dimensional (2d) materials, and methods of manufacturing the semiconductor devices. A semiconductor device may be an optoelectronic device including at least one doped 2d material.
Samsung Electronics Co., Ltd.

Solar cell

A solar cell is provided which includes: a photoelectric converter having a p-type surface on a major surface and an n-type surface on the major surface; a p-side electrode disposed on the p-type surface and formed from a plating film; an n-side electrode disposed on the n-type surface and formed from a plating film; a p-side seed layer disposed between the p-type surface and the p-side electrode; and an n-side seed layer disposed between the n-type surface and the n-side electrode, wherein a width w1 between the two closest points of the p-side electrode and the n-side electrode that are adjacent one another is greater than a width w2 between the two closest points of an end of the p-side seed layer and an end of the n-side seed layer that are adjacent one another.. .
Panasonic Intellectual Property Management Co., Ltd.

Silver nanoparticles on conducting electrode as plasmonic scattering nanomaterial and related photovoltaic cells

A plasmonic scattering nanomaterial comprising a substrate layer, a metal oxide layer in continuous contact with the substrate layer and silver nanoparticles with a diameter of 25-300 nm deposited on the metal oxide layer is disclosed. The silver nanoparticles have a broad size distribution and interparticle distances such that the silver nanoparticles plasmonically scatter light throughout the metal oxide layer with a near electric field strength of 1-30 v/m when excited by a light source having a wavelength in the range of 300-500 nm and/or 1000-1200 nm.
King Fahd University Of Petroleum And Minerals

Photoelectric conversion device

Provided is a photoelectric conversion device with an excellent conversion efficiency in which a series resistance between a semiconductor substrate and an electrode is reduced. The photoelectric conversion device includes a semiconductor substrate; a first conductivity region formed on the semiconductor substrate; and an electrode electrically connected to the first conductivity region, in which the first conductivity region includes an electrode region which faces the electrode, and crystal defects in the semiconductor substrate which faces the electrode region..
Sharp Kabushiki Kaisha

Semiconductor device

A semiconductor device includes a fin-shaped silicon layer on a silicon substrate. A first insulating film is around the fin-shaped silicon layer and a pillar-shaped silicon layer is on the fin-shaped silicon layer.
Unisantis Electronics Singapore Pte. Ltd.

Method for producing semiconductor device and semiconductor device

A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film; a second step of forming a pillar-shaped semiconductor layer and a first dummy gate; a third step of forming a second dummy gate on side walls of the first dummy gate and the pillar-shaped semiconductor layer; a fourth step of forming a fifth insulating film and a sixth insulating film around the second dummy gate; a fifth step of depositing a first interlayer insulating film, removing the second dummy gate and the first dummy gate, forming a gate insulating film around the pillar-shaped semiconductor layer, depositing metal, and performing etch back to form a gate electrode and a gate line; and a sixth step of forming a first diffusion layer in an upper portion of the pillar-shaped semiconductor layer.. .
Unisantis Electronics Singapore Pte. Ltd.

Thin film transistor substrate having high reliability metal oxide semiconductor material

The present disclosure relates to a thin film transistor substrate having a high reliability oxide semiconductor material including a metal oxide semiconductor material. A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a semiconductor layer including an oxide semiconductor material combining one or more of indium, gallium and zinc, oxygen, and a doping material.
Industry-academic Cooperation Foundation, Yonsei University

Manufacture dual gate oxide semiconductor tft substrate and structure thereof

The present invention provides a manufacture method of an oxide semiconductor tft substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor tft substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (52′) with ion doping process, and the oxide conductor layer (52′) is employed as being the pixel electrode of the lcd to replace the ito pixel electrode in prior art; the method manufactures the source (81), the drain (82) and the top gate (71) at the same time with one photo process; the method implements patterning process to the passivation layer (8) and the top gate isolation layer (32) together with one photo process, to reduce the number of the photo processes to nine for shortening the manufacture procedure, raising the production efficiency and lowering the production cost..
Shenzhen China Star Optoelectronics Technology Co. Ltd.

Semiconductor device and manufacturing semiconductor device

A semiconductor device in which the threshold is adjusted is provided. In a transistor including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the semiconductor, the electron trap layer includes crystallized hafnium oxide.
Semiconductor Energy Laboratory Co., Ltd.

Semiconductor device and manufacturing same

A semiconductor device includes a substrate; a gate electrode provided on the substrate; a first insulating layer formed on the gate electrode; an island-shaped oxide semiconductor layer formed on the first insulating layer; a source electrode electrically connected to the oxide semiconductor layer; and a drain electrode electrically connected to the oxide semiconductor layer, wherein the first insulating layer has a recess in the surface, wherein the oxide semiconductor layer is formed on a bottom surface and side walls of said recess and on an upper face of the first insulating layer, and wherein at least one of the source electrode and the drain electrode is disposed on a portion of the oxide semiconductor layer over the side walls of said recess, and is not formed on a portion of the oxide semiconductor layer over the upper face of the first insulating layer.. .
Sharp Kabushiki Kaisha

Semiconductor device and electronic device including the semiconductor device

A semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, a source electrode in contact with the second oxide semiconductor film, a drain electrode in contact with the second oxide semiconductor film, a metal oxide film over the second oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the metal oxide film, and a gate electrode over the gate insulating film. The metal oxide film contains m (m represents ti, ga, y, zr, la, ce, nd, or hf) and zn.
Semiconductor Energy Laboratory Co., Ltd.

Thin-film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, and display apparatus

A thin-film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display apparatus are provided. The method for manufacturing the tft includes: forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate; the forming the metal oxide semiconductor active layer includes: forming the metal oxide semiconductor active layer by electrochemical reaction.
Boe Technology Group Co., Ltd.

Oxide thin film transistor and manufacturing method thereof

The invention provides an oxide thin film transistor and a manufacturing method thereof. The manufacturing method includes sequentially forming a gate electrode, a gate insulating layer and an oxide semiconductor film on a first substrate; sequentially forming a first metal layer and a second metal layer on the oxide semiconductor film, and forming a drain electrode and a source electrode on the second metal layer, the drain electrode and the source electrode being separated by a channel and the channel exposing a portion of the first metal layer; oxidizing the exposed portion of the first metal layer; forming an insulating passivation layer and disposing contact electrodes.
Shenzhen China Star Optoelectronics Technology Co. Ltd.

Semiconductor device and fabricating the same

A semiconductor device and a method of fabricating the same are provided. The semiconductor device comprises a first multi-channel active pattern which is defined by a field insulating layer, extends along a first direction, and includes a first portion and a second portion; a gate electrode which extends along a second direction different from the first direction and is formed on the first portion; and a first source/drain region which is formed around the second portion protruding further upward than a top surface of the field insulating layer and contacts the field insulating layer, wherein the second portion is disposed on both sides of the first portion in the first direction and is more recessed than the first portion, a top surface of the first portion and a top surface of the second portion protrude further upward than the top surface of the field insulating layer, and a profile of sidewalls of the second portion is continuous..
Samsung Electronics Co., Ltd.

Semiconductor device and manufacturing method thereof

A method of manufacturing a fin fet includes forming a fin structure over a substrate. The fin structure includes an upper layer, and part of the upper layer is exposed from an isolation insulating layer.
Taiwan Semiconductor Manufacturing Co., Ltd.

Semiconductor device

A semiconductor device includes a fin-shaped semiconductor layer on a semiconductor substrate. A first insulating film is around the fin-shaped semiconductor layer and a pillar-shaped semiconductor layer is on the fin-shaped semiconductor layer.
Unisantis Electronics Singapore Pte. Ltd.

Vertical transistor with improved robustness

A transistor is disclosed that includes a semiconductor body having a first horizontal surface. A drift region is arranged in the semiconductor body.
Infineon Technologies Austria Ag

Method for producing semiconductor device and semiconductor device

A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film; a second step of forming a pillar-shaped semiconductor layer and a first dummy gate; a third step of forming a second dummy gate; a fourth step of forming a fifth insulating film and a sixth insulating film; a fifth step of depositing a first interlayer insulating film, removing the second dummy gate and the first dummy gate, forming a gate insulating film, depositing metal, and performing etch back to form a gate electrode and a gate line; a seventh step of forming a seventh insulating film; and an eighth step of forming insulating film sidewalls, forming a first epitaxially grown layer on the fin-shaped semiconductor layer, and forming a second epitaxially grown layer on the pillar-shaped semiconductor layer.. .
Unisantis Electronics Singapore Pte. Ltd.

(110) surface orientation for reducing fermi-level-pinning between high-k dielectric and group iii-v compound semiconductor device

A device with improved device performance, and method of manufacturing the same, are disclosed. An exemplary device includes a group iii-v compound semiconductor substrate that includes a surface having a (110) crystallographic orientation, and a gate stack disposed over the group iii-v compound semiconductor substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.

Semiconductor device and manufacturing method thereof

A semiconductor device includes an electron transit layer configured to be formed on a substrate; an electron supply layer configured to be formed on the electron transit layer; an upper surface layer configured to be formed on the electron supply layer; a gate electrode configured to be formed on the electron supply layer or the upper surface layer; a source electrode and a drain electrode configured to be formed on the upper surface layer; and first conductivity-type regions configured to be formed in the upper surface layer and the electron supply layer immediately below regions where the source electrode and the drain electrode are formed. The electron supply layer is formed of a nitride semiconductor including in.
Fujitsu Limited

Hetero-junction semiconductor device and manufacturing a hetero-junction semiconductor device

A hetero-junction semiconductor device includes: a channel layer that includes a first semiconductor; a barrier layer that is provided on the channel layer and includes a semiconductor having a band gap larger than a band gap of the first semiconductor; a source electrode and a drain electrode that are provided on the barrier layer and are ohmic contacted to the barrier layer; a p-type semiconductor layer provided on the barrier layer, the p-type semiconductor layer being provided in a region between the source electrode and the drain electrode on the barrier layer; an n-type semiconductor layer that is provided on the p-type semiconductor layer; and a gate electrode that is joined to the n-type semiconductor layer. A joint interface between the p-type semiconductor layer and the n-type semiconductor layer has a concavo-convex structure..
Toyota Jidosha Kabushiki Kaisha

Method for manufacturing semiconductor device

In a transistor including an oxide semiconductor film, a metal oxide film for preventing electrification which is in contact with the oxide semiconductor film and covers a source electrode and a drain electrode is formed. Then, oxygen is introduced (added) to the oxide semiconductor film through the metal oxide film and heat treatment is performed.
Semiconductor Energy Laboratory Co., Ltd.

Method for manufacturing thin-film transistor

A method for manufacturing a thin-film transistor includes: forming a first metal layer of a pattern including a gate on a substrate through pattern formation operations; forming a gate insulation layer on the substrate and the first metal layer and forming an oxide semiconductor layer, of which an orthogonal projection is cast on the gate, on the gate insulation layer within a thin-film transistor area and an etch stop layer on the oxide semiconductor layer, in which two etching operations are applied to the patternized oxide semiconductor layer and etch stop layer; forming a patternized second metal layer on the thin-film transistor area and an exposed portion of the gate insulation layer, forming a patternized insulation protection layer on the substrate and the patternized second metal layer, and forming a patternized pixel electrode on the insulation protection layer.. .
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Transistor with charge enhanced field plate structure and method

Transistors and methods of fabricating are described herein. These transistors include a field plate (108) and a charged dielectric layer (106) overlapping at least a portion of a gate electrode (102).
Freescale Semiconductor, Inc.

Manufacturing low temperature polysilicon thin film transistor

The invention provides a manufacturing method of a low temperature polysilicon thin film transistor, including: providing a substrate; forming a buffer layer on the substrate; simultaneously forming a polysilicon layer and a photoresist layer on the buffer layer; implanting ions into a source region and a drain region; removing the photoresist layer; forming an insulating layer on the polysilicon layer; forming a gate electrode on the insulating layer; and forming a passivation layer on the insulating layer. The passivation layer covers the gate electrode.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Method for manufacturing amoled backplane

The present invention provides a method for manufacturing an amoled backplane, in which after a first metal layer is patternized to form a first gate terminal (61), a second gate terminal (63), and an electrode plate (65), with the patternized first metal layer as a shielding layer, a patternized polysilicon layer is subjected to n-type light doping; and then, an insulation layer (7) is deposited and the insulation layer (7) is subjected to non-isotropic etching to form spacers (71), and with patternized first metal layer and the spacers (71) as a shielding layer, the patternized polysilicon layer is subjected to n-type heavy doping to form light-doping drain areas (n−) exactly below the spacers (71) on the opposite sides of the first gate terminal (61), whereby light-doping drain areas (n−) on opposite sides of a channel area of a switching tft are made symmetric to each other and the length of the light-doping drain areas (n−) is shorten; a conduction current is increased; a photoelectric current can be effectively reduced; one photo mask can be saved; and the cost can be lowered down.. .
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Method for fabricating semiconductor device having a silicide layer

A method for fabricating a semiconductor device is provided. The method includes forming a gate electrode and a source or drain disposed at opposite sides of the gate electrode, forming an interlayer insulating layer covering the gate electrode and the source or drain, forming a contact hole exposing the source or drain in the interlayer insulating layer, forming a silicide layer on a bottom surface of the contact hole, and forming a spacer on sidewalls of the contact hole and an upper surface of the silicide layer..
Samsung Electronics Co., Ltd.

Hybrid gate dielectrics for semiconductor power devices

In a general aspect, a power semiconductor device can include a silicon carbide (sic) substrate and a sic epi-layer disposed on the sic substrate. The device can also include a well region disposed in the sic epi-layer and a source region disposed in the well region.
Fairchild Semiconductor Corporation

Silicon carbide semiconductor device and manufacturing same

A silicon carbide substrate includes a first impurity region, a well region in contact with the first impurity region, and a second impurity region separated from the first impurity region by the well region. A first main surface includes a first region in contact with a channel region, and a second region different from the first region.
Sumitomo Electric Industries, Ltd.

Semiconductor devices including field effect transistors and methods of fabricating the same

A semiconductor device includes a fin structure on a substrate, device isolation patterns on the substrate at opposite sides of the fin structure, a gate electrode intersecting the fin structure and the device isolation patterns, a gate dielectric pattern between the gate electrode and the fin structure and between the gate electrode and the device isolation patterns, and gate spacers on opposite sidewalls of the gate electrode, wherein, on each of the device isolation patterns, a bottom surface of the gate dielectric pattern is at a higher level than bottom surfaces of the gate spacers.. .
Samsung Electronics Co., Ltd.

Transistor with a low-k sidewall spacer and making same

A transistor is formed by defining a gate stack on top of a semiconductor layer. The gate stack includes a gate dielectric and a gate electrode.
Stmicroelectronics (crolles 2) Sas

Semiconductor device having reduced drain-to-source capacitance

A semiconductor device includes a source finger electrode coupled to a source region in a semiconductor die, a drain finger electrode coupled to a drain region in the semiconductor die, where the source finger electrode includes at least one isolated segment and a main segment having a first portion and a second portion narrower than the first portion, whereby the source finger electrode reduces a drain-to-source capacitance of the semiconductor device. A common source rail is electrically coupled to the at least one isolated segment and the main segment of the source finger electrode.
Newport Fab, Llc Dba Jazz Semiconductor

Semiconductor device

A semiconductor device includes a semiconductor chip formed with an sic-igbt including an sic semiconductor layer, a first conductive-type collector region formed such that the collector region is exposed on a second surface of the sic semiconductor layer, a second conductive-type base region formed such that the base region contacts the collector region, a first conductive-type channel region formed such that the channel region contacts the base region, a second conductive-type emitter region formed such that the emitter region contacts the channel region to define a portion of a first surface of the sic semiconductor layer, a collector electrode connected to the collector region, and an emitter electrode connected to the emitter region. A mosfet of the device is connected in parallel to the sic-igbt, and includes a second conductive-type source region electrically connected to the emitter electrode and a second conductive-type drain region electrically connected to the collector electrode..
Rohm Co., Ltd.

Oxide film, integrated circuit device, and methods of forming the same

A doped mold film is formed with a dopant concentration gradient in the doped mold film that continuously varies in a thickness direction and a portion of the doped mold film is etched in the thickness direction to form a hole so that an electrode can be formed along an inner wall of the hole. The electrode thus formed includes a first outer wall surface, a second outer wall surface, and a third outer wall surface wherein the first outer wall surface is in contact with a sidewall of an insulating pattern formed on a substrate within a through hole formed in the insulating pattern; the second outer wall surface is in contact with a top surface of the insulating pattern and extends in a lateral direction; the third outer wall surface is spaced apart from the first outer wall surface with the second outer wall surface therebetween; and the third outer wall surface extends on the insulating pattern in a direction away from the substrate..
Samsung Electronics Co., Ltd.

Light emitting device and manufacturing the same

The present invention is directed to a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, and a method of manufacturing this light emitting device. An upper end portion of an insulating material 19 that covers an end portion of a first electrode 18 is formed to have a curved surface having a radius of curvature, a second electrode 23a is formed to have a slant face as going from its center portion toward its end portion along the curved surface.
Semiconductor Energy Laboratory Co., Ltd.

Oled display device and manufacture method thereof

The present invention provides an oled display device and a manufacture method thereof. By locating a thickness of a part of the second insulative layer correspondingly positioned above the bottom layer wiring in the white sub pixel area is larger than a thickness of other part of the second insulative layer in the white sub pixel area, increase a vertical distance from the bottom layer wiring to the first electrode in the white sub pixel area, and thus, the short circuit, the overcurrent between the first electrode and the bottom layer wiring of the white sub pixel area can be prevented.
Shenzhen China Star Optoelectronics Technology Co. Ltd.

Oled display substrate and manufacture method thereof

The present invention provides an oled display substrate and a manufacture method thereof. The oled display substrate comprises a substrate (10), a tft (90) located on the substrate (10), a passivation layer (50) located on the tft (90), a flat layer (60) located on the passivation layer (50), a connecting electrode (80) being located on the flat layer (60) and contacting the tft (90), an anode (70) being located on the flat layer (60) and covering the connecting electrode (80), an organic emitting layer (71) located on the anode (70) and a cathode (72) located on the organic emitting layer (71); the connecting electrode (80) contacts the tft (90) via the contact hole (81) penetrating the flat layer (60) and the passivation layer (50); the anode (70) is electrically connected to the tft (90) via the connecting electrode (80); the short circuit between the cathode and anode of the oled display substrate can be prevented for avoiding the current concentration and ensuring the normal illumination of the oled..
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Light emitting display device

A light emitting display device includes: a first substrate; a plurality of pixels arranged on the first substrate in a matrix and divided into a plurality of unit pixels arranged in a row direction and in a column direction, each of the unit pixels comprising a first pixel and a second pixel are arranged along the row direction, and a third pixel arranged in the column direction with respect to the first pixel and the second pixel; a first electrode corresponding to each of the pixels; a pixel defining layer partitioning the respective pixels on the substrate and having openings exposing the first electrode through the pixel defining layer; first light emitting layers consecutively on the first electrode of the first pixel and the second pixel of the unit pixels arranged in the same row line; second light emitting layers consecutively on the first electrode of the third pixel of the unit pixels arranged in the same row line; and a second electrode on the first light emitting layer and the second light emitting layer.. .
Samsung Display Co., Ltd.

Woled display device and manufacture method thereof

The present invention provides a woled display device and a manufacture method thereof. By locating a thickness of a part of the insulative layers correspondingly positioned above the bottom layer wiring in the white sub pixel area is larger than a thickness of other part of the insulative layers in the white sub pixel area to increase a vertical distance from the first electrode to the bottom layer wiring in the white sub pixel area, and meanwhile, by locating the first electrode and the bottom layer wiring in the white sub pixel area to be spaced with a distance in the horizontal direction to make a larger space between the first electrode and the bottom layer wiring, and thus, the bad phenomenon of the short circuit, the overcurrent caused by impurity substance between the first electrode and the bottom layer wiring can be avoided.
Shenzhen China Star Optoelectronics Technology Co. Ltd.

Severable organic light-emitting diode module

A severable organic light-emitting diode module includes a substrate, a first electrode located on the substrate, an organic light-emitting element layer, an electric connection element, an insulation wall and a second electrode. The organic light-emitting element layer is located on the first electrode and includes a bottom surface, a top surface and a through hole run through the bottom surface and the top surface.
Wisechip Semiconductor Inc.

Organic light emitting device

Provided is an organic light emitting device. The organic light emitting device includes a plurality of light emitting units laminated between a first electrode and a second electrode and each including an organic emitting layer, and a charge generation layer between the light emitting units.
Lg Display Co., Ltd.

Sensor

According to one embodiment, a sensor includes a light emitter and a light sensor. The light emitter includes a first electrode, a second electrode, and a first light emitting layer.
Kabushiki Kaisha Toshiba

Solid state image pickup device and producing solid state image pickup device

Forming a back-illuminated type cmos image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark.
Sony Corporation

Method for manufacturing solid-state image pickup apparatus, solid-state image pickup apparatus, and image pickup system including the same

A method for manufacturing a solid-state image pickup apparatus includes forming a first insulating film over a substrate after forming a gate electrode of a first transfer transistor and a gate electrode of a second transfer transistor, forming a second insulating film on the first insulating film, forming a first structure and a second structure on side surfaces of the gate electrodes of the first and second transfer transistors, respectively, via the first insulating film by etching the second insulating film in such a manner that the first insulating film remains on a semiconductor region of a photoelectric conversion unit and a semiconductor region of a charge holding unit, and forming a light shielding film that covers the gate electrode of the first transfer transistor, the semiconductor region of the charge holding unit, and the gate electrode of the second transfer transistor.. .
Canon Kabushiki Kaisha

Semiconductor device, fabrication a semiconductor device and electronic apparatus

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.. .
Sony Corporation

Semiconductor device, fabrication a semiconductor device and electronic apparatus

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.. .
Sony Corporation

Solid state imaging device, manufacturing solid state imaging device, and imaging system

A manufacturing method of a solid state imaging device according to one embodiment includes the steps of forming, on a substrate, a gate electrode of a first transistor and a gate electrode of a second transistor adjacent to the first transistor; forming an insulator film covering the gate electrode of the first transistor and the gate electrode of the second transistor such that a void is formed between the gate electrode of the first transistor and the gate electrode of the second transistor; forming a film on the insulator film; and forming a light shielding member by removing a part of the film by an etching.. .
Canon Kabushiki Kaisha

Ltps array substrate

An ltps array substrate includes a plurality of ltps thin-film transistors and a bottom transparent conductive layer, a protective layer, and a top transparent conductive layer. Each ltps thin-film transistor includes a substrate, a patternized light shield layer, a buffering layer, a patternized poly-silicon layer, a gate insulation layer, a gate line, and a common electrode line, an insulation layer, a drain and a source, and a planarization layer that are formed to sequentially stack on each other.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Liquid crystal display panel, array substrate and manufacturing thin-film transistor

An lcd panel, an array substrate and a manufacturing method for tft are disclosed. The method includes: providing a substrate; forming a first metal layer on the substrate, wherein the first metal layer includes an aluminum metal layer, an aluminum oxide layer and a molybdenum metal layer stacked sequentially; patterning the first metal layer to form a gate electrode of a tft; sequentially forming a gate insulation layer, a semiconductor layer and an ohmic contact layer on the gate electrode; forming a second metal layer on the ohmic contact layer; and patterning the second metal layer to form a source electrode and a drain electrode of the tft.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Thin-film transistor, display device, and manufacturing thin-film transistor

A thin-film transistor includes a substrate, a gate electrode formed on a surface of the substrate, a gate protection layer and a semiconductor layer stacked on the gate electrode, and an etch stop layer, source terminal metal, and drain terminal metal formed on a surface of the semiconductor layer in such a way that the source terminal metal and the drain terminal metal are respectively located on two opposite sides of the etch stop layer. The thin-film transistor further includes a light shielding layer, an insulation medium layer, and a pixel electrode.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Semiconductor device and manufacturing the semiconductor device

An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An in—sn—o-based oxide semiconductor layer including siox is used for a channel formation region.
Semiconductor Energy Laboratory Co., Ltd.

Thin film transistor, manufacturing thin film transistor, array substrate and display device

Embodiments of the present invention disclose a thin film transistor, a method of manufacturing a thin film transistor, an array substrate and a display device, which may ensure electrical connection between source and drain electrodes and an active layer without configuring any through hole due to providing an etch stop layer between the active layer and the source and drain electrodes, a portion of the etch stop layer being in contact with the source and drain electrode is made of metal or metal alloy; and may ensure insulation between the source and the drain electrodes when the thin film transistor is turned-off, ensuring normal operation of the thin film transistor, by oxidating the portion of the etch stop layer at the position between the source and the drain electrodes as an insulating material. The etch stop layer may not only prevent the active layer from being damaged when etching the source and drain electrodes, but also prevent the active layer from other adverse effects from subsequent processes, such as adverse effects from water, hydrogen and oxygen, etc., thereby enhancing performance of the thin film transistor, just because of providing the etch stop layer between the active layer and the source and drain electrodes in the thin film transistor..
Boe Technology Group Co., Ltd.

Array substrate, fabricating the same, display panel and display device

An array substrate, a method for fabricating the same, a display panel and a display device are disclosed. The array substrate comprises a display area and a non-display area that is outside the display area.
Boe Technology Group Co., Ltd.

Array substrate, its manufacturing method and display device

An array substrate, a method for manufacturing the array substrate and a display device are provided. The array substrate includes a gate electrode, a gate line, a gate insulation layer, a source electrode, a drain electrode, a data line, a common electrode and a common electrode line arranged on base substrate.
Hefei Boe Optoelectronics Technology Co., Ltd.

Three dimensional flash memory using electrode layers and/or interlayer insulation layers having different properties, and preparation method therefor

Embodiments of the present invention enable threshold voltage distribution of a plurality of electrode layers to be improved by configuring each of the plurality of electrode layer maintains to have different physical structures or materials, etc., thereby enhancing credibility during a process of maintaining stores data and a reading process.. .
Industry-university Cooperation Foundation Hanyang University

Memory devices including blocking layers

A memory device includes a cell region and a peripheral circuit region adjacent the cell region. A plurality of gate electrode layers and insulating layers are stacked on the substrate in the cell region, and a plurality of circuit devices are in the peripheral circuit region.

Method for producing one-time-programmable memory cells and corresponding integrated circuit

An integrated circuit includes a silicon on insulator substrate having a semiconductor film located above a buried insulating layer. At least one memory cell of the one-time-programmable type includes an mos capacitor having a first electrode region including a gate region at least partially silicided and flanked by an insulating lateral region, a dielectric layer located between the gate region and the semiconductor film, and a second electrode region including a silicided zone of the semiconductor film, located alongside the insulating lateral region and extending at least partially under the dielectric layer..
Stmicroelectronics Sa

Semiconductor device having buried gate structure and fabricating the same

A semiconductor device includes a device isolation region defining an active region in a substrate, and gate structures buried in the active region of the substrate. At least one of the gate structures includes a gate trench, a gate insulating layer conformally formed on an inner wall of the gate trench, a gate barrier pattern conformally formed on the gate insulating layer disposed on a lower portion of the gate trench, a gate electrode pattern formed on the gate barrier pattern and filling the lower portion of the gate trench, an electrode protection layer conformally formed on the gate insulating layer disposed on an upper portion of the gate trench to be in contact with the gate barrier pattern and the gate electrode pattern, a buffer oxide layer conformally formed on the electrode protection layer, and a gate capping insulating layer formed on the buffer oxide layer to fill the upper portion of the gate trench..
Samsung Electronics Co,. Ltd.

Semiconductor devices having fins

A semiconductor device includes a first fin on a substrate, a gate electrode on the substrate to intersect the first fin, an epitaxial layer on both sides of the gate electrode to contact side surfaces of the first fin, and a metal alloy layer which contacts an upper surface of the first fin and part of the epitaxial layer, wherein a first region of the first fin has a higher doping concentration than a second region of the first fin which is located under the first region.. .
Samsung Electronics Co., Ltd.

Semiconductor device and manufacturing the same

A semiconductor device is capable of accurately sensing a temperature of a semiconductor element incorporated in a semiconductor substrate. The semiconductor device includes a temperature sensor.
Toyota Jidosha Kabushiki Kaisha

Semiconductor device

A capacitive component region is formed below a temperature detecting diode or below a protective diode. In addition, the capacitive component region is formed below an anode metal wiring line connecting the temperature detecting diode and an anode electrode pad and below a cathode metal wiring line connecting the temperature detecting diode and a cathode electrode pad.
Fuji Electric Co., Ltd.

Flexible device having flexible interconnect layer using two-dimensional materials

A flexible device includes an electronic device having an electrode and a flexible interconnect layer formed on the electrode. The flexible interconnect layer includes a two-dimensional (2d) material and a conductive polymer to have high electric conductivity and flexibility.
Samsung Electronics Co., Ltd.

Semiconductor device, metal member, and manufacturing semiconductor device

A flange on first open end of a tubular contact member is soldered to a conductive plate of an insulating substrate. An external electrode terminal is fitted into a main body tube portion of the tubular contact member.
Fuji Electric Co., Ltd.

Semiconductor device

A purpose of the present invention is to provide a semiconductor device that can restrain occurrence of partial discharge in evaluation of electric characteristics and can carry out failure analysis from the upper side of a measurement object. A semiconductor device according to the present invention includes: at least one electrode; a protective layer having at least one opening part provided such that a portion of the electrode is exposed at the opening part, and being formed to cover the other portion of the electrode excluding the portion of the electrode exposed at the opening part, the protective layer being insulative; and a conductive layer formed so as to cover the protective layer and the opening part and be directly connected to the electrode at the opening part..
Mitsubishi Electric Corporation

Semiconductor device having electrode made of high work function material, manufacturing the same

Provided is a semiconductor device including a metal film which can be formed with lower costs but still manage to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed on the insulating film.
Hitachi Kokusai Electric Inc.

Substrate cleaning removing oxide film

It was found out that when radicals generated by plasma are fed to a treatment chamber via a plurality of holes (111) formed on a partition plate which separates a plasma-forming chamber (108) from the treatment chamber, and the radicals are mixed with a treatment gas which is separately fed to the treatment chamber, the excitation energy of the radicals is suppressed and thereby the substrate surface treatment at high si-selectivity becomes possible, which makes it possible to conduct the surface treatment of removing native oxide film and organic matter without deteriorating the flatness of the substrate surface. The radicals in the plasma are fed to the treatment chamber via radical-passing holes (111) of a plasma-confinement electrode plate (110) for plasma separation, the treatment gas is fed to the treatment chamber (121) to be mixed with the radicals in the treatment chamber, and then the substrate surface is cleaned by the mixed atmosphere of the radicals and the treatment gas..
Canon Anelva Corporation

Ion trap with variable pitch electrodes

Methods, apparatuses, and systems for design, fabrication, and use of an ion trap with variable pitch electrodes are described herein. One apparatus includes an ion trap and a plurality of variable pitch electrodes disposed on the ion trap.
Honeywell International Inc.

Deposition of solid state electrolyte on electrode layers in electrochemical devices

Methods and apparatus are described for improving the fabrication of thin film electrochemical devices such as thin film batteries and electrochromic devices, with respect to deposition of lipon, or other lithium ion conducting electrolyte, thin films on electrodes such as li metal, li—coo2, wo3, nio, etc. A method of fabricating an electrochemical device in a deposition system may comprise: configuring an electrically conductive layer substantially peripherally to a portion of the surface of an electrode layer of the electrochemical device; electrically connecting the electrically conductive layer to an electrically conductive, but electrically floating, surface; and depositing a lithium ion conducting solid state electrolyte layer on the portion of the surface of the electrode layer of the electrochemical device within the deposition chamber, wherein the depositing comprises forming a plasma within the deposition chamber; wherein during the depositing, the electrically conductive, but electrically floating, surface is within the deposition chamber..
Applied Materials, Inc.

End block assembly, bearing assembly, and manufacturing a bearing assembly

In various embodiments, an end block assembly for rotatably mounting a tubular electrode in a processing chamber is provided. The end block assembly includes a receptacle region for receiving a bearing assembly which has a coupling region for coupling the tubular electrode thereto, the bearing assembly of which the coupling region is supported by a sleeve of the bearing assembly.
Von Ardenne Gmbh

Apparatus for manufacturing template and manufacturing template

According to one embodiment, an apparatus for manufacturing a template includes a vacuum chamber, an electrode and an adjustor. The vacuum chamber includes an inlet and an exhaust port of a reactive gas.
Kabushiki Kaisha Toshiaba

Electron beam microscope with improved imaging gas and use

Charged particle beam imaging and measurement systems are provided using gas amplification with an improved imaging gas. The system includes a charged particle beam source for directing a charged particle beam to work piece, a focusing lens for focusing the charged particles onto the work piece, and an electrode for accelerating secondary electrons generated from the work piece irradiation by the charged practice beam, or another gas cascade detection scheme.
Fei Company

Conductive resin molded body, structure, aluminum porous body, producing aluminum porous body, current collector, electrode, non-aqueous electric double layer capacitor, and lithium ion capacitor

Provided is a conductive resin molded body that has a three-dimensional network structure and is suitable for producing an aluminum porous body in which the water adsorption amount is small. The conductive resin molded body includes a resin molded body having a three-dimensional network structure and a conductive layer at least containing carbon black and carboxymethylcellulose on the surface of the skeleton of the resin molded body.
Sumitomo Electric Industries, Ltd.

Capacitor

Provided herein is a capacitor in which an electrolyte is infiltrated into a wound electrode group faster than conventionally. A negative current collecting member 9 has one slit 57 formed to extend across a protruded portion 49 and a negative current collecting member body (first welding portion) 53 and to penetrate the protruded portion 49 and the negative current collecting member body 53 in a thickness direction.
Hitachi Chemical Company, Ltd.

Dye-sensitized solar cell and manufacturing thereof

A dye-sensitized solar cell formed by layering a conductive layer; a photoelectric conversion layer in which a dye is adsorbed in a porous semiconductor layer and the layer is filled with a carrier transporting material; and a counter electrode including only a counter electrode conductive layer or including a catalyst layer and a counter electrode conductive layer on a support made of a light transmitting material, in which the photoelectric conversion layer is brought into contact with the counter electrode; the porous semiconductor layer forming the photoelectric conversion layer has two or more layers with different light scattering properties; and the two or more porous semiconductor layers are layered in an order of from a layer with lower light scattering property to a layer with higher light scattering property from a light receiving face side of the dye-sensitized solar cell.. .
Sharp Kabushiki Kaisha

Photovoltaic device comprising porous titanium oxide layer, first hole transport layer, and second hole transport layer

A photovoltaic device according to an aspect of the present disclosure includes a first electrode, a second electrode positioned to face the first electrode, a porous titanium oxide layer on a surface of the first electrode facing the second electrode, a first hole transport layer between the porous titanium oxide layer and the second electrode, and a second hole transport layer between the first hole transport layer and the second electrode. The porous titanium oxide layer contains a porous titanium oxide that supports a photosensitizer.
Panasonic Corporation

Patterned electrode contacts for optoelectronic devices

A micropillar array structure includes a substrate; and an array of micropillars provided on a surface of the substrate, wherein the micropillars are substantially transparent to light, and the height of micropillars is at most 500 μm. The micropillar array structures can be used in optoelectronic devices such as solar cells..
Toyota Motor Europe Nv/sa

Capacitor with various capacitances

The present invention relates to a capacitor with various capacitances, comprising dielectric sheets, outer electrodes, and inner electrodes, printed on said dielectric sheets, wherein said dielectric sheets are overlapped, the odd layers of said dielectric sheets are first dielectric sheets, and the even layers of said dielectric sheets are second dielectric sheets, an inner electrode on said first dielectric sheet and/or an inner electrode on said second dielectric sheet is divided into at least two isolated electrodes, each electrode on said first dielectric sheet and said second dielectric sheet is leaded respectively to form terminal electrodes, and said terminal electrodes are encapsulated to form the outer electrodes. Thus, different outer electrodes for wiring can be selected according to the needs for capacitor capacitances, in order to provide various capacitances, only by changing wiring on one capacitor, which can meet the requirements of customers for different capacitances, with a good versatility, and a wide application range; meanwhile, such a capacitor can replace several capacitors in a circuit, which greatly reducing the size of the circuit board and the user's inventory pressure..
Beijing Yuan Liu Hong Yuan Electronic Technology Co., Ltd.

Composite electronic component

A composite electronic component includes a composite body in which a capacitor and an inductor are coupled to each other, the capacitor including a ceramic body in which a plurality of dielectric layers and first and second internal electrodes disposed to face each other with at least one among the plurality of dielectric layers interposed therebetween are stacked, and the inductor including a magnetic body including a coil part. The inductor and the capacitor are coupled to each other by an adhesive containing a first epoxy resin including a urethane modified epoxy (ume) resin, a second epoxy resin including a bisphenol a type resin, and a latent curing agent..
Samsung Electro-mechanics Co., Ltd.

Method of manufacturing stacked ceramic capacitor including identifying direction of stacking in stacked ceramic capacitor

In a method of identifying a direction of stacking in a stacked ceramic capacitor, while density of magnetic flux generated from a magnetism generation apparatus is measured with a magnetic flux density measurement instrument, a stacked ceramic capacitor is caused to pass between a magnetism generation apparatus and the magnetic flux density measurement instrument and variation in magnetic flux density at least at the time of passage of the stacked ceramic capacitor is measured. Based on a result of measurement of magnetic flux density, a direction in which a plurality of internal electrodes are stacked in the stacked ceramic capacitor is identified..
Murata Manufacturing Co., Ltd.

Multilayer ceramic electronic component and board having the same

A multilayer ceramic electronic component may include first and second metal frames connected to different external electrodes of a multilayer ceramic capacitor, respectively, and disposed to be spaced apart from a mounting surface of the multilayer ceramic capacitor; and an insulating layer disposed on a surface of the multilayer ceramic capacitor opposing the mounting surface thereof.. .
Samsung Electro-mechanics Co., Ltd.

Electronic component

A first metal terminal includes a first connection portion connected to an electrode portion of a second external electrode, and a first leg portion extending from the first connection portion. A second metal terminal includes a second connection portion connected to a conductor portion of a connection conductor, and a second leg portion extending from the second connection portion.
Tdk Corporation

Electronic component

A coil is formed by winding an electrically-conductive wire, and is buried in a molded body formed from a composite magnetic material containing a magnetic powder and a resin. Each of led-out ends of the coil has a cut surface formed by obliquely cutting an electrically-conductive wire with respect to a surface thereof.
Toko, Inc.

Chip electronic component

A chip electronic component includes a magnetic main body including an insulating substrate and a coil conductor pattern disposed on at least one surface of the insulating substrate, and external electrodes formed on opposite ends of the magnetic main body so as to be connected to an end of the coil conductor pattern. The coil conductor pattern includes a pattern plating layer and a first plating layer disposed on the pattern plating layer, and a thickness of the first plating layer of innermost and outermost coil conductor patterns of the coil conductor pattern is greater than a thickness of the first plating layer of an inner coil conductor pattern disposed between the innermost and outermost coil conductor patterns..
Samsung Electro-mechanics Co., Ltd.

Inductor and manufacturing same

An inductor includes a coil substrate, an encapsulation material containing a magnetic material and selectively covering the coil substrate, and first and second external electrodes formed on the exterior of the encapsulation material. The coil substrate includes a laminate of stacked structures each including a conductive track and first and second connection parts on opposite sides of the conductive track in a single wiring layer.
Tokyo Coil Engineering Co., Ltd.

Chip resistor and manufacturing method thereof

There is provided a chip resistor suitable for power detection. The chip resistor includes a resistor having a resistor lower surface and a resistor upper surface which face mutually opposite sides in a thickness direction, a pair of resistor first side surfaces spaced apart from each other in a first direction perpendicular to the thickness direction, and a pair of resistor second side surfaces spaced apart from each other in a second direction perpendicular to both the thickness direction and the first direction, a first electrode formed along one resistor first side surface, and a second electrode formed along the other resistor first side surface, and spaced apart from the first electrode..
Rohm Co., Ltd.

Chip resistor

A chip resistor includes a resistive element, a pair of electrodes, and heat radiator plates. The resistive element is made of a plate-shaped metal.
Panasonic Intellectual Property Management Co., Ltd.

Charge trapping memristor

A charge trapping memristor is disclosed. An example charge trapping memristor includes a first electrode and second electrode configured on opposite sides of a channel to generate an electric potential across the channel, and a charge barrier.
Hewlett Packard Enterprise Development Lp

Method and system for adjusting gamma voltage, and electronic device

The method for adjusting a gamma voltage comprises: applying a reference common electrode voltage and a to-be-adjusted gamma voltage to a display module; collecting first light intensity data when the display module displays a grayscale test pattern after the reference common electrode voltage and the to-be-adjusted gamma voltage are applied; plotting a testing gamma curve in accordance with the first light intensity data; when the testing gamma curve is not located within the acceptable range of the standard gamma curve, adjusting the to-be-adjusted gamma voltage currently applied to the display module, until the testing gamma curve is located within the acceptable range of the standard gamma curve; and when the testing gamma curve is located within the acceptable range of the standard gamma curve, determining the to-be-adjusted gamma voltage currently applied to the display module as a final gamma voltage.. .
Hefei Boe Optoelectronics Technology Co., Ltd.

Method and display improving uniformity of displayed image

The present application provides a method and display apparatus for improving uniformity of displayed image, the method comprises inputting a first image signal to a display apparatus; compensating the first image signal in accordance with an image compensation data to obtain a third image signal, wherein the image compensation data is an amount of shift in a voltage of a common electrode of an array substrate of the display apparatus determined in accordance with a difference value between a grey level information of the first image signal and the grey level information of an original second image signal corresponding to the first image signal; and displaying the third image signal. Through the method above, the present invention effectively improves the uniformity of the displayed image without decreasing the displayed brightness of the image..
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Display device

A display device includes pixel electrodes formed in an image display area of a substrate, a common electrode formed in the image display area, inside signal lines formed inside the image display area, and electrically connected to the pixel electrodes, outside signal lines formed outside the image display area, and electrically connected to the inside signal lines, and a common line formed inside and outside the image display area, and electrically connected to the common electrode. An image is displayed under a control of a light using an electric field developed between the pixel electrodes and the common electrode.
Japan Display Inc.

Method and dislay device for uniform image display

A method and a display device for uniform image display are provided. The method is used for a full in-cell display device and includes steps of: a display device inputting a first image signal, compensating the first image signal according to image compensation data to obtain a third image signal and displaying the third image signal.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Liquid crystal display device

According to one embodiment, a liquid crystal display device includes pixel electrodes arranged in matrix, gate lines, source lines, pixel switches, gate drivers allocated at both ends of a display region, a source driver, image signal transmit lines arranged along the columns in which the pixel electrodes are arranged, each image signal transmit line supplying an image signal to each source line, switches arranged along the row direction, each switch configured to switch a connection between the source line and the image signal transmit line, and control lines configured to output source control signals to switch the switches, each control line outputting a source control signal to switch a plurality of the switches at the same time, wherein each source control signal is input to each control line at a position substantially the center of the gate line in the row direction.. .
Japan Display Inc.

Driving apparatus, display apparatus, and electronic apparatus

A driving apparatus includes a contrast controller configured to repeat a bright display and a dark display having a display tone lower than the bright display every one frame in the plurality of pixels. In a driving mode in which the contrast controller repeats the bright display and the dark display, the common voltage controller provides different values to the common voltage in applying the voltage to the same pixel electrode between a first bright display frame that provides the bright display just before a frame for the dark display and a second bright display frame that provides the bright display just after the frame for the dark display..
Canon Kabushiki Kaisha

Liquid crystal display panel and grayscale voltage compensating method thereof

A liquid crystal display panel and a grayscale voltage compensating method thereof are provided. The compensating method includes: obtaining an actual voltage distribution of a common voltage on a common electrode; and compensating positive polarity grayscale voltages as well as negative polarity grayscale voltages of respective pixel electrodes according to the actual voltage distribution to make that: for a same grayscale value, a difference value between the compensated positive polarity grayscale voltage of each pixel electrode and the common voltage on an opposing position of the pixel electrode on the common electrode is equal to a difference value between the compensated negative polarity grayscale voltage of the pixel electrode and the common voltage on the opposing position.
Shenzhen China Star Optoelectronics Technology Co. Ltd.

E-paper imaging via addressable electrode array

An e-paper imaging system includes a writing unit and a support surface to support a passive e-paper media in a position spaced apart from the writing unit. The writing unit includes a charge generator and an electrode array.
Hewlett-packard Development Company, L.p.

Organic el display device and driving method

A plurality of display pixels each include: an organic el element; a capacitance element that holds a first voltage used to cause the organic el element to emit light; a drive transistor that supplies a current corresponding to the first voltage to the organic el element; and a capacitance element that holds a second voltage that is a next voltage to be held in the capacitance element. A power line is connected to a drain electrode of the drive transistor or a cathode of the organic el element.
Joled Inc.

Organic light emitting diode display and manufacturing the same

An organic light emitting diode display includes a pixel portion displaying an image and a peripheral portion surrounding the pixel portion, a semiconductor layer including a pixel switching semiconductor layer on the pixel portion on the substrate, a being driving semiconductor layer, and a peripheral switching semiconductor layer on the peripheral portion, a first gate insulating layer on the semiconductor layer, a peripheral switching gate electrode on the first gate insulating layer of the peripheral portion, a second gate insulating layer covering the peripheral switching gate electrode and the first gate insulating layer, a pixel switching gate electrode and a driving gate electrode on the second gate insulating layer of the pixel portion, and a third gate insulating layer covering the pixel switching gate electrode, the driving gate electrode, and the second gate insulating layer.. .
Samsung Display Co., Ltd.

Pixel circuit, driving method thereof, display panel and display device

The present invention provides a pixel circuit, a driving method thereof, a display panel and a display device. The pixel circuit comprises a first charging module, a storage capacitor, a second charging module, a reset module, a drive transistor, a light-emitting control module and a light-emitting device; the first charging module and the second charging module are respectively connected to two ends of the storage capacitor; the reset module is connected to both ends of the storage capacitor; a control electrode of the drive transistor is connected to the end of the storage capacitor connected to the second charging module, a first electrode thereof is connected to a high-voltage terminal, and a second electrode thereof is connected to the second charging module; and the light-emitting control module is connected between the drive transistor and the light-emitting device..
Ordos Yuansheng Optoelectronics Co., Ltd

Pixel driving circuit of organic light emitting display

An oled pixel driving circuit includes a first transistor controlled by a scan driving signal to control transmission of a data signal and a reference voltage signal to a first electrode plate of a capacitor; a second transistor electrically connected to a second electrode plate of the capacitor to determine magnitude of a driving current, where the driving current is determined by a voltage difference between a gate and a drain of the second transistor; a third transistor electrically connected to the second electrode plate of the capacitor and the second transistor and controlled by a first driving signal to control conduction or cut-off between the gate and the drain of the second transistor; and a fourth transistor electrically connected to the second transistor and the third transistor and controlled by a second driving signal to control transmission of the driving current to an organic light emitting element.. .
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Driving circuit for a display panel and liquid crystal display device using the same

A driving circuit is provided to reduce threshold voltage shifting of a driving switch thereof, and includes a capacitor, a pre-charging switch, a scanning switch, a driving switch, three stabilizing switches, and a light emitting device. A gate electrode of the pre-charging switch receives a first control signal, a drain electrode thereof receives a second control signal, and a source electrode thereof is connected to the capacitor, so as to pre-charge the capacitor to switch on the driving switch.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Array substrate and driving method thereof and display apparatus

There are provided an array substrate and a driving method thereof, and a display apparatus. Multiple gate lines are arranged on the array substrate, two ends of the gate lines are connected to a first gate driving circuit and a second gate driving circuit respectively, each of the gate lines is divided into a first gate line portion connected to the first gate driving circuit and a second gate line portion connected to the second gate driving circuit, and a switch element is arranged between the first gate line portion and the second gate line portion.
Hefei Xinsheng Optoelectronics Technology Co., Ltd

Water leak warning device

An easy-to-use, installation-free water leak warning device having a sturdy hollow body enclosing essential functioning elements including a power source, an amplifier, a speaker, and portions of two electrodes. The water leak warning device is preferably small in size and may be placed at potential water leak or flooding spots.
Widget Lab Inc



Electrode topics:
  • Phosphoric Acid
  • Internal Combustion Engine
  • Carbon Atoms
  • Porous Carbon
  • Double Layer Capacitor
  • Graphene Oxide
  • Aqueous Solution
  • Lithium Ion
  • Exhaust Gas
  • Soot Sensor
  • Combustion
  • Calibration
  • Electronic Apparatus
  • Electrical Signal
  • Electric Conversion


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