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Electrode patents

      

This page is updated frequently with new Electrode-related patent applications.




 Harmonic cold plasma device and associated methods patent thumbnailnew patent Harmonic cold plasma device and associated methods
A method for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonics. The unit includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors.
Plasmology4, Inc.


 System,  recovering mining fluids from mining byproducts patent thumbnailnew patent System, recovering mining fluids from mining byproducts
A system, method and apparatus for recovering mining fluids from mining byproducts uses a plasma arc torch and a screw feed unit. The plasma arc torch includes a cylindrical vessel, a first tangential inlet/outlet connected to or proximate to a first end, a second tangential inlet/outlet connected to or proximate to a second end, an electrode housing connected to the first end such that a first electrode is (a) aligned with a longitudinal axis of the cylindrical vessel, and (b) extends into the cylindrical vessel, and a hollow electrode nozzle is connected to the second end such that the hollow electrode nozzle is aligned with the longitudinal axis, the hollow electrode nozzle is partially disposed within the cylindrical vessel and outside the cylindrical vessel.
Foret Plasma Labs, Llc


 Cartridge-type x-ray source apparatus and x-ray emission apparatus using same patent thumbnailnew patent Cartridge-type x-ray source apparatus and x-ray emission apparatus using same
Disclosed are a cartridge-type x-ray source apparatus and an x-ray emission apparatus using the same. The x-ray source includes: a cathode electrode provided with an electron emission source by using a nanostructure; an anode electrode having a target emitting x-rays by electron collision; and a housing forming an external appearance, and exposing a cathode electrode terminal connected to the cathode electrode and an anode electrode terminal connected to the anode electrode to an outside thereof, wherein the cathode electrode terminal and the anode electrode terminal differ from each other in at least one of exposure direction, height, size, and shape..
Vatech Ewoo Holdings Co., Ltd.


 Electro-acoustic conversion film and digital speaker patent thumbnailnew patent Electro-acoustic conversion film and digital speaker
Provided is an electro-acoustic conversion film that is suitably used for a digital speaker or the like, and that includes a polymer composite piezoelectric body formed by dispersing piezoelectric particles in a viscoelastic matrix formed of a polymer material having viscoelasticity at room temperature, and thin-film electrodes provided on both surfaces of the polymer composite piezoelectric body, and at least one of the thin-film electrodes is divided into a plurality of regions of which an area increases by 2n times (n is a natural number including 0). Thus, a digital speaker in which reverberation or crosstalk between segments is suppressed is obtained..
Fujifilm Corporation


 Electro-acoustic conversion film and digital speaker patent thumbnailnew patent Electro-acoustic conversion film and digital speaker
Provided is an electro-acoustic conversion film that is suitably used for a digital speaker or the like, and that includes a polymer composite piezoelectric body formed by dispersing piezoelectric particles in a viscoelastic matrix formed of a polymer material having viscoelasticity at room temperature, and thin-film electrodes provided on both surfaces of the polymer composite piezoelectric body, in which at least one of the thin-film electrodes is divided into a plurality of regions having the same area, and the respective regions are coupled in parallel and grouped to correspond to a weight of each bit digit of a parallel pcm digital signal. Thus, an electro-acoustic conversion film by which a digital speaker in which reverberation or crosstalk between segments is suppressed is obtained is provided..
Fujifilm Corporation


 Photoelectric conversion device and imaging system patent thumbnailnew patent Photoelectric conversion device and imaging system
A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit, a reset transistor, and an amplifier transistor that outputs a signal from the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode.
Canon Kabushiki Kaisha


 Semiconductor device and driving system patent thumbnailnew patent Semiconductor device and driving system
A semiconductor device includes a high side driver, in which the high side driver has an output transistor configured to supply a power voltage to an output terminal based on a driving voltage applied to a gate electrode of the output transistor; a short circuit transistor configured to couple the gate electrode of the output transistor with the output terminal; and a switch transistor connected in series between the gate electrode of the output transistor and a drain electrode of the short circuit transistor. The switch transistor is controlled by a back gate of the switch transistor..
Renesas Electronics Corporation


 Semiconductor device and  manufacturing semiconductor device patent thumbnailnew patent Semiconductor device and manufacturing semiconductor device
A semiconductor device includes a plurality of semiconductor switching elements disposed on a single semiconductor substrate comprising a semiconductor having a bandgap that is wider than that of silicon; and a plurality of electrode pads that are disposed in a predetermined planar layout on a front surface of the semiconductor substrate, the plurality of electrode pads each being electrically connected to the plurality of semiconductor switching elements. A plurality of terminal pins to externally carry out voltage of the electrode pads is bonded through a plated film to all of the plurality of electrode pads by solder..
Fuji Electric Co., Ltd.


 Delay cell and delay line having the same patent thumbnailnew patent Delay cell and delay line having the same
A delay cell includes first through fifth inversion circuits. The first inversion circuit inverts an input signal, and an output electrode of the first inversion circuit is coupled to a first node.
Samsung Electronics Co., Ltd.


 Piezoelectric vibrator, electronic apparatus, and vehicle patent thumbnailnew patent Piezoelectric vibrator, electronic apparatus, and vehicle
A piezoelectric vibrator includes a piezoelectric substrate including a first surface, a second surface that is opposites to the first surface, and a connection part that connects the first surface and the second surface to each other, and a pair of excitation electrodes disposed respectively on the first surface and the second surface. The connection part includes a plurality of protruding parts disposed in an area between the excitation electrode and an outer edge of the piezoelectric substrate.
Seiko Epson Corporation


new patent

Piezoelectric vibrator element, piezoelectric vibrator, electronic apparatus, and vehicle

A piezoelectric vibrator element includes a piezoelectric substrate including a vibrating part and a fixation part, a first excitation electrode including a first foundation electrode layer disposed on a first surface of the vibrating part, and a first upper electrode layer disposed on the first foundation electrode layer, and a second excitation electrode including a second foundation electrode layer disposed on a second surface of the vibrating part, opposed to the first surface, and a second upper electrode layer disposed on the second foundation electrode layer, wherein a ratio ta2/t1 between a thickness ta2 of the second upper electrode layer and a thickness t1 of the vibrating part is not lower than 1.4% and not higher than 2.4%.. .
Seiko Epson Corporation

new patent

Lc-tank oscillator having intrinsic low-pass filter

An oscillator for generating oscillation signals at two output terminals includes an inductor coupled between the two output terminals, a capacitor coupled between the two output terminals, two p-type transistors and two n-type transistors. Source electrodes of the two p-type transistors are coupled to a supply voltage, and gate electrodes of the two p-type transistors are coupled to the two output terminals, respectively.
Mediatek Inc.

new patent

Power generating element

There is provided a power generating element which is capable of converting vibration energy in various directions into electric energy without waste and less likely to be damaged even upon application of excessive vibration. Made available is a main generating structure (mgs) in which a first layer (100), a second layer (200) and a third layer (300) are laminated.
Tri-force Management Corporation

new patent

Electrostatic induction power generator

A board arrangement structure includes a housing, a first board fastened to the housing, a second board arranged in parallel enabling, relative movement with respect to the first board, an electrically charged film, a counter electrode, and an output part outputting electric power generated between the electrically charged film and the counter electrode, at least one of the electrically charged film and the counter electrode being arranged at a first facing surface of the first board and the other being arranged at a second facing surface of the second board facing the first facing surface, and the first facing surface of the first board being, fastened to a reference mounting surface provided at the housing.. .
Citizen Holdings Co., Ltd.

new patent

Power module

A power module includes a substrate, a first sub-module, a second sub-module and a circuit board. The semiconductor switches and the diodes of the first sub-module and the second sub-module are embedded within insulation layers.
Delta Electronics Int'l (singapore) Pte Ltd

new patent

Dc/dc converter and electrical storage system

A dc/dc converter is able to step down a voltage value of a high-voltage battery, and is able to step up a voltage value of a low-voltage battery. The low-voltage battery is a battery that provides a lower voltage value than the high-voltage battery.
Toyota Jidosha Kabushiki Kaisha

new patent

Power conversion apparatus

A power conversion apparatus is provided with a plurality of dc-dc converters. Each of the dc-dc converters includes at least one gate resistor and a gate driver.
Toyota Jidosha Kabushiki Kaisha

new patent

Galvanic charging and data transfer of remote devices in a personal area network system and method

A method includes providing a first device, the first device having an electrode for placement at skin of a user, conveying power between the electrode of the first device and an electrode of a second device, wherein both the first device and the second device are associated with a personal area network and the second device is remote from the first device. The conveying power is performed through galvanic coupling..
Bragi Gmbh

new patent

Semiconductor light emitting element

A semiconductor light-emitting element includes a multilayer body including a first end surface and a second end surface which are opposed to each other, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are stacked; a pair of recesses that are formed on the second semiconductor layer, separated from the second end surface, and separated from each other in the direction parallel to the first and second end surfaces; a ridge portion that is a protrusion between the pair of recesses and extends along the direction perpendicular to the first and second end surfaces; a band-shaped electrode disposed on the ridge portion; and a light guide layer formed on the second semiconductor layer between the ridge portion and the second end surface and guides light from the light emitting layer.. .
Stanley Electric Co., Ltd.

new patent

Biometric belt connector

A belt connector is provided. The belt connector is configured to electrically connect a conductor of an electrode belt to a male portion of a snap connector electrode connected to a biometric device.
Nox Medical

new patent

Sensor and manufacturing the sensor

A sensor according to the present disclosure may include a substrate, an antenna pattern formed to transmit and receive a wireless signal to and from an external device, a sensing unit configured to be driven when the wireless signal is received through the antenna pattern and to generate a signal when in contact with a sensing target material, and a circuit line electrically connected between the antenna pattern and the sensing unit, wherein the antenna pattern and the circuit line are formed of a same material and on a same layer. A fabrication method of a sensor according to the present disclosure may include printing a conductive layer having an antenna pattern, a sensing electrode and a circuit line on one surface of a substrate with a single layer, heat-drying the conductive layer, printing, on a single layer, a circuit insulating layer that covers part of the circuit line and an antenna insulating layer that covers part of the antenna pattern, curing the insulating layer, printing an antenna bridge on the antenna insulating layer, heat-drying the antenna bridge, and bonding a device electrically connected to the circuit line to the substrate..
Lg Electronics Inc.

new patent

High-frequency module

An inductor component is disposed outside a multilayer substrate, and thus a directional coupler defined by an internal wiring electrode and a coil electrode within the inductor component that is mounted on a pair of land electrodes, the multilayer substrate significantly reduces or prevents interference with other high-frequency circuit elements disposed in or on the multilayer substrate. Additionally, if a plurality of inductor components having different inductor characteristics are prepared, a high-frequency module including the multilayer substrate capable of defining the directional coupler whose characteristics are able to adjusted with ease is able to be provided simply by selecting the desired inductor component from the inductor components and replacing that inductor component..
Murata Manufacturing Co., Ltd.

new patent

Electrode for photobattery

An electrode comprising an electrode material of the same type as electrode materials used in li-ion batteries and a dye is provided. The electrode may further comprise a semiconductor material.
Hydro-quÉbec

new patent

Nickel hydrogen secondary battery

A nickel hydrogen secondary battery accommodates an electrode group including a positive electrode and a negative electrode which are stacked one on top of another through a separator, together with an alkaline electrolyte. The battery contains li, with a total amount of li in the battery 2 of 15 to 50 mg/ah, as determined as the mass in terms of lioh per ah of the positive electrode capacity.
Fdk Corporation

new patent

Rechargeable battery

A rechargeable battery includes an electrode assembly including a first electrode, a separator, and a second electrode, a case that accommodates the electrode assembly, a first lead terminal and a second lead terminal that are respectively connected to the first electrode and the second electrode of the electrode assembly, the first and second lead terminals being drawn out of the case, and a fixing member that surrounds the first lead terminal and the second lead terminal, wherein each of the first lead terminal and the second lead terminal includes a first region and a second region on opposite sides of the fixing member, a width of the first region and a width of the second region being different.. .
Samsung Sdi Co., Ltd.

new patent

Battery, battery pack, electronic equipment, electric vehicle, power storage device, and power system

A battery includes a positive electrode formed with a positive electrode active material layer containing a positive electrode active material at least on one side of a positive electrode current collector, a negative electrode formed with a negative electrode active material layer containing a negative electrode active material at least on one side of a negative electrode current collector, a separator, and an electrolyte containing solid particles. The capacity area density (mah/cm2) of the negative electrode active material layer is equal to or higher than 2.2 mah/cm2 and equal to or lower than 10 mah/cm2, and the capacity area density (mah/cm2) of a gap in the negative electrode active material layer is equal to or higher than 5.9 mah/cm2 and equal to or lower than 67 mah/cm2..
Sony Corporation

new patent

Sodium ion secondary battery

A sodium ion secondary battery includes a positive electrode containing a positive electrode active material, a negative electrode containing a negative electrode active material, a separator provided between the positive electrode and the negative electrode, and an electrolyte, the positive electrode active material containing a sodium-containing transition metal oxide that reversibly intercalates and deintercalates sodium ions, in the sodium-containing transition metal oxide in a fully charged state, the ratio of sodium atoms to transition metal atoms, i.e., na/mt, satisfying na/mt≦0.3, and the ratio of the total cnt of the reversible capacity and the irreversible capacity of the negative electrode to the total cpt of the reversible capacity and the irreversible capacity of the positive electrode, i.e., cnt/cpt, satisfying 1≦cnt/cpt.. .
Sumitomo Electric Industries, Ltd.

new patent

Microbial fuel cell

A microbial fuel cell includes a container unit and an electrode unit. The container unit includes an electrolytic cell and a communication port.
Panasonic Corporation

new patent

Fuel cell stack

A fuel cell stack includes a stacked body, a first insulator and a second insulator. The stacked body includes power generation cells.
Honda Motor Co., Ltd.

new patent

Membrane-seal assembly

Disclosed is a reinforced membrane-seal assembly, the reinforced membrane-seal assembly including: an inner region and a border region and wherein the inner region includes ion-conducting component and the border region includes seal component; wherein first and second planar porous reinforcing components each extend across the inner region into the border region and wherein the pores of each of the first and second planar porous reinforcing components in the inner region are impregnated with ion-conducting component and the pores of each of the first and second planar porous reinforcing components in the border region are impregnated with seal component is disclosed. Also disclosed is a catalyst-coated reinforced membrane-seal assembly, a reinforced membrane-seal electrode assembly and an electrochemical device including the reinforced membrane-seal assembly..
Johnson Matthey Fuel Cells Limited

new patent

Porous electrode substrate, manufacturing same, membrane electrode assembly, polymer electrolyte fuel cell, precursor sheet, and fibrillar fibers

Provided is a porous electrode substrate having excellent thickness precision, gas permeability and conductivity, handling efficiency, low production costs and a high carbonization rate during carbonization. Also provided are a method for manufacturing such a substrate, a precursor sheet and fibrillar fiber used for forming such a substrate, along with a membrane electrode assembly and a polymer electrolyte fuel cell that contain such a substrate.
Mitsubishi Rayon Co., Ltd.

new patent

Slurry for lithium ion secondary battery positive electrode-use, producing slurry for lithium ion secondary battery positive electrode-use, producing positive electrode for lithium ion secondary battery-use, and lithium ion secondary battery

Provided is a slurry for lithium ion secondary battery positive electrode-use that includes a positive electrode active material, a binding material, a conductive material, and an organic solvent. The positive electrode active material is a lithium cobalt-based composite oxide particle having an oxide of at least one metal selected from the group consisting of mg, ca, al, b, ti, and zr on its surface.
Zeon Corporation

new patent

Graphite-based active material, negative electrode, and lithium ion secondary battery

A graphite-based active material including: a first composite particle including a first graphite core particle and a first non-graphite-based carbon material covering the surface of the first graphite core particle; and a second composite particle including a second graphite core particle and a second non-graphite-based carbon material covering the surface of the second graphite core particle, wherein the mass fraction of the second non-graphite-based carbon material in the second composite particle, mass fraction b, is 5% by mass or more and more than the mass fraction of the first non-graphite-based carbon material in the first composite particle, mass fraction a, and the proportion of the second composite particle to the total of the first composite particle and the second composite particle is 1% by mass or more.. .
Nec Energy Devices, Ltd.

new patent

Negative electrode material for lithium-ion secondary battery, manufacturing negative electrode material for lithium-ion secondary battery, negative electrode material slurry for lithium-ion secondary battery, negative electrode for lithium-ion secondary battery, and lithium-ion secondary battery

A negative electrode material for a lithium-ion secondary battery, in which the negative electrode material includes a composite particle including a spherical graphite particle and plural graphite particles that have a compressed shape and that aggregate or are combined so as to have nonparallel orientation planes, and the negative electrode material has an r-value in a raman measurement of from 0.03 to 0.10, and has a pore volume as obtained by mercury porosimetry of from 0.2 ml/g to 1.0 ml/g in a pore diameter range of from 0.1 μm to 8 μm.. .
Hitachi Chemical Company, Ltd.

new patent

Carbonaceous molded article for electrodes and manufacturing the same

The above object can be achieved by the carbonaceous molded article for electrodes of the present invention comprising a carbon fiber nonwoven fabric, the article having a thickness of not greater than 1 mm, an atomic ratio (h/c) of hydrogen atoms and carbon atoms according to elemental analysis of not greater than 0.1, a porosity determined from a bulk density and a butanol true density of the molded article of 25 to 80%, and a volatile content of not greater than 5.0 wt %.. .

new patent

Precursor of positive electrode active material for nonaqueous electrolyte secondary batteries and production method thereof and positive electrode active material for nonaqueous electrolyte secondary batteries and production method thereof

Provided is a precursor of a positive electrode active material containing, in a reduced amount, impurities which do not contribute to a charge/discharge reaction but rather corrode a firing furnace and peripheral equipment and thus having excellent battery characteristics and safety, and production method thereof. A method for producing a precursor of a positive electrode active material for nonaqueous electrolyte secondary batteries having a hollow structure or porous structure includes obtaining the precursor by washing nickel-manganese composite hydroxide particles having a particular composition ratio and a pore structure in which pores are present within the particles with an aqueous carbonate solution having a carbonate concentration of 0.1 mol/l or more..
Sumitomo Metal Mining Co., Ltd.

new patent

Secondary battery, battery pack, electronic device, electrically driven vehicle, storage device, and power system

A secondary battery includes a positive electrode including a positive electrode active material layer having a positive electrode active material, a negative electrode including a negative electrode active material layer having a negative electrode active material, and an electrolyte. The positive electrode active material contains either a lithium iron phosphate compound having an olivine structure or lithium-manganese composite oxide having a spinel structure.
Sony Corporation

new patent

Secondary battery, battery pack, electronic device, electrically driven vehicle, storage device, and power system

A secondary battery includes a positive electrode including a positive electrode active material layer having a positive electrode active material, a negative electrode including a negative electrode active material layer having a negative electrode active material, and an electrolyte. The positive electrode active material contains at least either a lithium iron phosphate compound having an olivine structure or lithium-manganese composite oxide having a spinel structure.
Sony Corporation

new patent

Nonaqueous electrolyte battery and battery pack, and vehicle

According to one embodiment, a nonaqueous electrolyte battery is a provided. The nonaqueous electrolyte battery includes a positive electrode, a negative electrode and a nonaqueous electrolyte.
Kabushiki Kaisha Toshiba

new patent

Lithium-ion secondary battery

A lithium-ion secondary battery (100a) includes a positive electrode current collector (221a) and a positive electrode active material layer (223a) retained on the positive electrode current collector (221a). The positive electrode active material layer (223a) contains positive electrode active material particles, a conductive agent, and a binder.
Toyota Jidosha Kabushiki Kaisha

new patent

Porous carbon nanotube microsphere and preparation method and use thereof, lithium metal -skeleton carbon composite and preparation method thereof, negative electrode, and battery

Disclosed is a porous carbon nanotube microsphere material and the preparation method and use thereof, a lithium metal-skeleton carbon composite and the preparation method thereof, a negative electrode of a secondary battery, a secondary battery, and a metal-skeleton carbon composite. The porous carbon nanotube microsphere material is spherical or spheroidal particles composed of carbon nanotubes.
Suzhou Institute Of Nano-tech And Nano-bionics (sinano), Chinese Academy Of Sciences

new patent

Nanoporous tin powder for energy applications

A nanoporous tin is disclose, along with a method of fabrication thereof, the tin having a hierarchical nanoporous and mesoporous ligament morphology that exhibits long-term cyclability, particularly when used as anode material in li-ion. One embodiment of the present technology is a fabrication method to directly produce nanoporous tin in powder form, rather than a monolithic piece of nanoporous metal, so that the np-sn powder can be directly integrated into composite electrodes using commercial battery electrode processing techniques..
The Regents Of The University Of California

new patent

Battery

Wherein s is the area density of the positive electrode active material layer [mg/cm2] and ln is natural logarithm.. .

new patent

Lithium ion secondary battery

A lithium ion secondary battery having excellent input characteristics and safety is provided. The lithium ion secondary battery includes an electrode group made up of a positive electrode, a negative electrode, and a separator and an electrolytic solution provided in a battery container, the positive electrode has a current collector and a positive electrode composite applied to both surfaces of the current collector, the positive electrode composite contains layered lithium nickel manganese cobalt composite oxide as a positive electrode active material, an application quantity of the positive electrode composite to one surface is 110 to 170 g/m2, a density of the positive electrode composite is 2.5 to 2.8 g/cm3, the negative electrode has a current collector and a negative electrode composite applied to both surfaces of the current collector, and the negative electrode composite contains easily graphitizable carbon as a negative electrode active material..
Hitachi Chemical Company, Ltd.

new patent

Method of manufacturing electrical storage device and manufacturing electrode

A method of manufacturing an electrical storage device that includes an electrode including a cutout part in which a terminal unit including no active material layer is provided. The electrical storage device is manufactured by forming an active material layer having a partially cut-out rectangular shape on a surface of a collector base material to form an electrode base material.
Murata Manufacturing Co., Ltd.

new patent

Battery cell

A battery cell is provided that includes an electrode assembly and a pouch case that accommodates the electrode assembly therein. Additionally, an electrode lead including an outer lead that protrudes outside the pouch case is provided and an inner lead is disposed between the outer lead and the electrode assembly, accommodated in the pouch case, and cut by tension applied when the pouch case expands..
Hyundai Motor Company

new patent

Battery cell

A battery cell includes: an electrode assembly; a pouch case accommodating the electrode assembly therein; and an electrode lead including an outer lead protruding to an outside of the pouch case and an inner lead disposed between the outer lead and the electrode assembly, accommodated in the pouch case, and cut by expansion force of the pouch case.. .
Hyundai Motor Company

new patent

Lithium-ion secondary battery and producing the same

In a lithium-ion secondary battery, as for a distance from a connection section between a positive electrode tab and the positive electrode terminal to a boundary section between applying and non-applying sections of positive-electrode active material in a direction perpendicular to a stacking direction, compared with a reference positive electrode having the boundary section that is located farthest to the connection section by straight-line distance, a layer of a positive electrode that is stacked in such a way as to be farthest from the reference positive electrode has a smaller distance from a boundary of the applying and non-applying sections of the positive-electrode active material to a connection section with the positive electrode tab in a direction perpendicular to a stacking direction.. .

new patent

Connector for battery and battery comprising the same

The present disclosure provides a connector for battery and a battery having the same. The connector includes: a terminal connecting part configured to be connected with an electrode terminal of the battery; an electrode core connecting part configured to be connected with a winding electrode core of the battery, and having a first connecting plate and a second connecting plate opposite to each other; and a transition part connected between the terminal connecting part and the electrode core connecting part, configured to be fitted within a gap between two tabs of two adjacent winding electrode cores, and having a shape matched with that of the gap..
Byd Company Limited

new patent

Lithium ion secondary battery

A stacked lithium ion secondary battery is characterized in that separators, which are stacked with positive and negative electrodes, are a flat bag or flat tube with at least one side of an outer periphery thereof intermittently heat-sealed; the heat-sealed side is provided with concave and convex portions made up of straight lines or curves or a combination of straight lines and curves; the outer periphery of the separator made with the concave and convex portions is positioned outside the outer periphery of the negative electrode along with the concave and convex portions; and the outer periphery of the negative electrode is positioned outside the outer periphery of the positive electrode housed in the bag-shape or tubular separator.. .

new patent

Battery separator for extending the cycle life of a battery

A battery separator for extending the cycle life of a battery has a separator and a conductive layer. The conductive layer is disposed upon the separator.
Daramic Llc

new patent

Integrated electrode assembly

The disclosed technology relates to electrodes with a polyurethane based melt coating present in the electrode. When the electrode is used in an electrochemical cell, the polyurethane based melt coating acts as a separator in the cell.
Lubrizol Advanced Materials, Inc.

new patent

Cylindrical sealed battery

A nonaqueous electrolyte secondary battery representing an embodiment of a sealed battery of the present invention includes a bottomed cylindrical exterior case (15), a sealing member (20), a cylindrical wound electrode assembly (14) including a positive electrode plate (11) and a negative electrode plate (12) wound together via a separator (13), and an electrolyte. The cylindrical wound electrode assembly (14) and the electrolyte are accommodated in the exterior case (15).
Sanyo Electric Co., Ltd.

new patent

Method of manufacturing organic light emitting diode with light-scattering layer

Provided is an organic light emitting diodes (oled) and method of manufacturing the oled. The oled includes: a substrate; a light scattering layer having an uneven shape on the substrate; a transparent electrode film provided directly on and in contact with the light scattering layer; an organic light emitting layer on the transparent electrode film; and an electrode on the organic light emitting layer.
Electronics And Telecommunications Research Instit Ute

new patent

Semiconductor device and manufacturing method thereof

As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film..
Semiconductor Energy Laboratory Co., Ltd.

new patent

Vertical-type organic light-emitting transistors with reduced leakage current and fabricating the same

A vertical-type organic light-emitting transistor for reducing the off-state leakage current to improve the current and on-off ratio includes a gate electrode, a lower semiconductor layer disposed on the gate electrode, a source electrode disposed on the lower semiconductor layer, and a source insulation film disposed on the source electrode and covering top and sides of the source electrode, wherein the lower semiconductor layer is configured such that an electric charge is injected into the lower semiconductor layer from the source electrode when voltage is applied to the gate electrode.. .
Seoul National University R&db Foundation

new patent

Organic el display device

Due to insufficient moisture inside a panel it may take a long time for a screening. An organic el display device includes a light emitting region including a lower electrode, an organic el layer, and an upper electrode, a barrier film formed so as to cover the light emitting region, and a moisture retaining film which is formed on the barrier film and is moisture retentive..
Japan Display Inc.

new patent

Organic electroluminescent device, preparing the same and display panel

An organic electroluminescent device, a method for preparing an organic electroluminescent device, and a display panel are disclosed. The organic electroluminescent device comprises a conductive layer formed by transparent magnetic conductive particles which are mixed in the sealing layer and stacked on a surface of the first transparent electrode layer.
Boe Technology Group Co., Ltd.

new patent

Dual-gate chemical field effect transistor sensor

A chemical sensing field effect transistor device is disclosed. The device can include a control gate structure interfacing a control side of a semiconductor channel region, a source region, and a drain region.
University Of Utah Research Foundation

new patent

Organic electroluminescent element and manufacturing same

An organic electroluminescent element contains, on a base, at least a pair of electrodes that are arranged so as to face each other and a group of organic function layers including a light emitting layer, the group of organic function layers being held between the pair of electrodes. The base is a resin base having a thickness within the range of 3-50 μm, and the resin base-side electrode is a transparent positive electrode that is mainly composed of silver and has a thickness within the range of 2-20 nm..
Konica Minolta, Inc.

new patent

Compound and organic light-emitting device including the same

An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer comprises a compound represented by formula 1. An organic light-emitting device including the compound may have high efficiency, low voltage, high luminance, and a long lifespan..
Samsung Display Co., Ltd.

new patent

Resistive random access memory

A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face.
National Sun Yat-sen University

new patent

Semiconductor memory device

A semiconductor memory device includes a selection transistor on a semiconductor substrate, a lower contact plug connected to a drain region of the selection transistor, and a magnetic tunnel junction pattern on the lower contact plug, the magnetic tunnel junction pattern including a bottom electrode in contact with the lower contact plug, the bottom electrode being an amorphous tantalum nitride layer, a top electrode on the bottom electrode, first and second magnetic layers between the top and bottom electrodes, and a tunnel barrier layer between the first and second magnetic layers.. .

new patent

Magnetic tunnel junction with reduced damage

A method includes patterning a metal layer to form a plurality of bottom electrode features, forming a magnetic tunnel junction (mtj) stack by a line-of-sight deposition process such that a first portion of the mtj stack is formed on the bottom electrode features, and a second portion of the mtj stack is formed on a level that is different than a top surface of the bottom electrode features, and performing a removal process to remove the second portion of the mtj stack while leaving the first portion of the mtj stack substantially intact.. .
Taiwan Semiconductor Manufacturing Company, Ltd.

new patent

Semiconductor device, semiconductor device package, and lightning apparatus

A semiconductor device includes a light emitting structure, and an interconnection bump including an under bump metallurgy (ubm) layer disposed on an electrode of at least one of the first and second conductivity-type semiconductor layers, and having a first surface disposed opposite to a surface of the electrode and a second surface extending from an edge of the first surface to be connected to the electrode, an intermetallic compound (imc) disposed. On the first surface of the ubm layer, a solder bump bonded to the ubm layer with the imc therebetween, and a barrier layer disposed on the second surface of the ubm layer and substantially preventing the solder bump from being diffused into the second surface of the ubm layer..
Samsung Electronics Co., Ltd.

new patent

Light emitting element package and manufacturing the same

There is provided a light emitting element package including: a light emitting laminate having a structure in which semiconductor layers are laminated and having a first main surface and a second main surface opposing the first main surface; a terminal unit disposed on an electrode disposed on the second main surface; a molded unit disposed on the second main surface of the light emitting laminate and allowing a portion of the terminal unit to be exposed; and a wavelength conversion unit disposed on the first main surface of the light emitting laminate.. .
Samsung Electronics Co., Ltd.

new patent

Lighting device having sealing member covering inside of wall member surrounding light emitting elements

A lighting device includes a body section; a substrate provided in the body section; a wiring pattern provided on a surface of the substrate and including wiring pads; and light emitting elements provided on the wiring pattern and including electrodes in the vicinity of a circumferential edge of a surface opposite to a side on which the wiring pattern is provided. The lighting device also includes wirings that respectively connect the wiring pads and a plurality of electrodes; a surrounding wall member provided to surround the light emitting elements and having an annular shape; and a sealing section provided to cover the inside of the surrounding wall member.
Toshiba Lighting & Technology Corporation

new patent

Light-emitting-device package and production method therefor

A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. Uv reflectance of the first surface of the metal body is higher than uv reflectance of the pair of electrodes..
Lumens Co., Ltd.

new patent

Light emitting element

The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.. .
Seoul Viosys Co., Ltd.

new patent

Light emitting device and manufacturing light emitting device

A method for manufacturing a light emitting device includes a) forming a first light confinement layer having a plurality of openings on or above one main surface of an oriented polycrystalline substrate, said oriented polycrystalline substrate including a plurality of oriented crystal grains; b) stacking an n-type layer, an active layer, and a p-type layer; c) forming a second light confinement layer on said first light confinement layer so that said second light confinement layer covers said plurality of first columnar structures and said second columnar structure; d) forming a transparent conductive film on said second light confinement layer; e) forming a pad electrode on said transparent conductive film; and f) forming a cathode electrode electrically connected to ends of said plurality of first columnar structures closer to said oriented polycrystalline substrate.. .
Ngk Insulators, Ltd.

new patent

Apparatus for electroplating of electrodes on photovoltaic structures

A wafer-holding apparatus for electroplating of a solar cell wafer is provided. The wafer has chamfered corners and comprises a plurality of busbar areas, wherein at least one busbar area is near an edge of the wafer.
Solarcity Corporation

new patent

Solar cell reflector / back electrode structure

A photovoltaic or light detecting device is provided that includes a periodic array of dome or dome-like protrusions at the light impingement surface and three forms of reflector/back electrode at the device back. The beneficial interaction between an appropriately designed top protrusion array and these reflector/electrode back contacts (r/ebcs) serve (1) to refract the incoming light thereby providing photons with an advantageous larger momentum component parallel to the plane of the back (r/ebc) contact and (2) to provide optical impedance matching for the short wavelength incoming light.

new patent

Forming front metal contact on solar cell with enhanced resistance to stress

System and method of providing a photovoltaic (pv) cell having a cushion layer to alleviate stress impact between a front metal contact and a thin film pv layer. A cushion layer is disposed between an extraction electrode and a photovoltaic (pv) surface.
Alta Devices, Inc.

new patent

Thin film transistor array substrate and fabricating method thereof, and liquid crystal display

A thin film transistor array substrate includes a pixel electrode layout area, a data electrode layout area, a transparent pixel electrode layer formed in the pixel electrode layout area, a first metal layer, a first dielectric layer, an amorphous silicon layer, a second metal layer, a second dielectric layer formed in the pixel electrode layout area and the data electrode layout area. The first dielectric layer covers the first metal layer.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

new patent

Array substrate and fabricating the same

A method of manufacturing an array substrate is discussed. The method includes forming a gate line on a substrate including a pixel region, forming a gate electrode on the substrate and connected to the gate line, and forming a gate insulating layer on the gate line and the gate electrode.
Lg Display Co., Ltd.

new patent

Thin film transistor array panel and manufacturing the same

One or more exemplary embodiments disclose a thin film transistor array panel and a manufacturing method thereof including a substrate, a gate line on the substrate, the gate line including a gate electrode, a gate insulating layer on the gate electrode, a semiconductor layer on the gate insulating layer, and the semiconductor layer including an oxide semiconductor, a data wire layer above the semiconductor layer, the data wire layer including a data line, a source electrode coupled to the data line, and a drain electrode facing the source electrode, and a metal phosphorus oxide layer configured to cover the source electrode and the drain electrode.. .
Samsung Display Co., Ltd.

new patent

Semiconductor device and manufacturing the same

A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, and an oxide insulating film covering the transistor. The multilayer film includes an oxide semiconductor film and an oxide film containing in or ga, the oxide insulating film contains more oxygen than that in the stoichiometric composition, and in the transistor, by a bias-temperature stress test, threshold voltage does not change or the amount of the change in a positive direction or a negative direction is less than or equal to 1.0 v, preferably less than or equal to 0.5 v..
Semiconductor Energy Laboratory Co., Ltd.

new patent

Array substrate and manufacturing method thereof, display panel, display device

An array substrate and a manufacturing method thereof, a display panel, and a display device are provided. The array substrate includes a substrate; a source-drain metallic layer and a first passivation metallic protective layer formed in sequence on the substrate, the source-drain metallic layer including a source electrode and a drain electrode not contacted with each other; a conductive protection layer formed on the substrate on which the first passivation metallic protection layer has been formed; and a pixel electrode formed on the substrate on which the conductive protection layer has been formed, the pixel electrode contacting the conductive protection layer..
Beijing Boe Display Technology Co., Ltd.

new patent

Semiconductor device and manufacturing the same

An oxide semiconductor layer is formed, a gate insulating layer is formed over the oxide semiconductor layer, a gate electrode layer is formed to overlap with the oxide semiconductor layer with the gate insulating layer interposed therebetween, a first insulating layer is formed to cover the gate insulating layer and the gate electrode layer, an impurity element is introduced through the insulating layer to form a pair of impurity regions in the oxide semiconductor layer, a second insulating layer is formed over the first insulating layer, the first insulating layer and the second insulating layer are anisotropically etched to form a sidewall insulating layer in contact with a side surface of the gate electrode layer, and a source electrode layer and a drain electrode layer in contact with the pair of impurity regions are formed.. .
Semiconductor Energy Laboratory Co., Ltd.

new patent

Semiconductor device and manufacturing method thereof

A semiconductor device includes a substrate, an insulating structure, and a gate stack. The substrate has at least one semiconductor fin.
Taiwan Semiconductor Manufacturing Co., Ltd.

new patent

Semiconductor device and fabricating the same

A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium..
Samsung Electronics Co., Ltd.

new patent

Semiconductor device and manufacturing semiconductor device

In a front surface of a semiconductor base body, a gate trench is disposed penetrating an n+-type source region and a p-type base region to a second n-type drift region. In the second n-type drift region, a p-type semiconductor region is selectively disposed.
National Institute Of Advanced Industrial Science And Technology

new patent

Thin film transistor and manufacturing method thereof

A thin film transistor includes a substrate, a gate electrode disposed on the substrate, a channel layer located on the gate electrode, a gate insulation layer disposed between the gate electrode and the channel layer, an etching stop layer disposed on the channel layer, and a source electrode and a drain electrode disposed on the etching stop layer. The gate electrode has multiple through holes, the etching stop layer has multiple contact holes overlapped with the through holes in a direction perpendicular to the substrate, and the source and drain electrodes are respectively electrically connected to the channel layer through the contact holes.
Au Optronics Corporation

new patent

Semiconductor device

A semiconductor device includes: a substrate; a semiconductor stack including a first nitride semiconductor layer and a second nitride semiconductor layer formed above the substrate; a source electrode and a drain electrode formed above a lower surface of the semiconductor stack; a gate electrode; in plan view, a current-drift area; a non-current-drift area; and a collapse reducing electrode formed on the non-current-drift area in the second nitride semiconductor layer, the collapse reducing electrode being formed to have a substantially same potential as the gate electrode. In the semiconductor device, the collapse reducing electrode and the second nitride semiconductor layer have a junction surface functioning as an energy barrier having a rectifying effect in a forward direction from the collapse reducing electrode to the second nitride semiconductor layer..
Panasonic Intellectual Property Management Co., Ltd.

new patent

Semiconductor device including two-dimensional material

A semiconductor device includes a substrate, a two-dimensional (2d) material layer formed on the substrate and having a first region and a second region adjacent to the first region, and a source electrode and a drain electrode provided to be respectively in contact with the first region and the second region of the 2d material layer, the second region of the 2d material layer including an oxygen adsorption material layer in which oxygen is adsorbed on a surface of the second region.. .
Research & Business Foundation Sungkyunkwan University

new patent

Trench-type insulated gate semiconductor device including an emitter trench and an overlapped floating region

A semiconductor device of the present invention includes a semiconductor layer, a plurality of gate trenches formed in the semiconductor layer, a gate electrode filled via a gate insulating film in the plurality of gate trenches, an n+-type emitter region, a p-type base region, and an n−-type drift region disposed, lateral to each gate trench, in order in a depth direction of the gate trench from a front surface side of the semiconductor layer, a p+-type collector region disposed on a back surface side of the semiconductor layer with respect to the n−-type drift region, a plurality of emitter trenches formed between the plurality of gate trenches adjacent to each other, a buried electrode filled via an insulating film in the plurality of emitter trenches, and electrically connected with the n+-type emitter region, and a p-type floating region formed between the plurality of emitter trenches, and the p-type floating region is formed deeper than the p-type base region, and includes an overlap portion that goes around to a lower side of an emitter trench closest to the gate trench out of the plurality of emitter trenches and has an end portion positioned on a side closer to the gate trench with respect to a center in a width direction of the emitter trench.. .
Rohm Co., Ltd.

new patent

Semiconductor device

To provide a semiconductor device in which an edge termination structure can be made smaller easily. A semiconductor device is provided, the semiconductor device including an active region and an edge termination structure formed on a front surface side of a semiconductor substrate, wherein an edge termination structure has a guard ring provided surrounding an active region on a front surface side of a semiconductor substrate, a first field plate provided on a front surface side of a guard ring, an electrode unit provided on a front surface side of a first field plate, a second field plate provided between a first field plate and a electrode unit, and a conductive connecting unit which mutually electrically connects a first field plate, an electrode unit, a second field plate, and a guard ring..
Fuji Electric Co., Ltd.

new patent

Method and device for metal gate stacks

A method for manufacturing a semiconductor device includes providing a substrate structure including a substrate, a high-k dielectric layer on the substrate, a capping layer on the high-k dielectric layer, forming a first n-type work function metal layer on the capping layer, forming a second n-type work function metal layer on the first n-type work function metal layer, and forming a metal electrode layer on the second n-type work function metal layer. The second n-type work function metal layer has a ti/al atomic ratio greater than the ti/al atomic ratio of the first n-type work function metal layer.
Semiconductor Manufacturing International (shanghai) Corporation

new patent

Gate structure, semiconductor device and the forming semiconductor device

A gate structure, a semiconductor device, and the method of forming a semiconductor device are provided. In various embodiments, the gate structure includes a gate stack and a doped spacer overlying a sidewall of the gate stack.
Taiwan Semiconductor Manufacturing Co., Ltd.

new patent

Nitride semiconductor device using insulating films having different bandgaps to enhance performance

The semiconductor device includes: a channel layer, a barrier layer, a first insulating film, and a second insulating film, each of which is formed above a substrate; a trench that penetrates the second insulating film, the first insulating film, and the barrier layer to reach the middle of the channel layer; and a gate electrode arranged in the trench and over the second insulating film via a gate insulating film. The bandgap of the second insulating film is smaller than that of the first insulating film, and the bandgap of the second insulating film is smaller than that of the gate insulating film gi.
Renesas Electronics Corporation

new patent

Semiconductor device

According to the present invention, a semiconductor device includes a first conductivity type sic layer, an electrode that is selectively formed upon the sic layer, and an insulator that is formed upon the sic layer and that extends to a timing region that is set at an end part of the sic layer. The insulator includes an electrode lower insulating film that is arranged below the electrode, and an organic insulating layer that is arranged so as to cover the electrode lower insulating film.
Rohm Co., Ltd.

new patent

Semiconductor device and manufacturing semiconductor device

A semiconductor device includes a wide-bandgap semiconductor substrate of a first conductivity type, a wide-bandgap semiconductor deposition layer of the first conductivity type, semiconductor regions of a second conductivity type, a wide-bandgap semiconductor layer of the second conductivity type, first regions of the first conductivity type, and second regions of the first conductivity type. The width w of a plating film formed on a source electrode of the semiconductor device is greater than or equal to 10 μm.
Fuji Electric Co., Ltd.

new patent

Three-dimensional semiconductor devices

A three-dimensional (3d) semiconductor device includes a plurality of gate electrodes stacked on a substrate in a direction normal to a top surface of the substrate, a channel structure passing through the gate electrodes and connected to the substrate, and a void disposed in the substrate and positioned below the channel structure.. .

new patent

Semiconductor device having multi-channel and forming the same

A semiconductor device includes an isolation pattern on a substrate, the isolation pattern having a lower insulating pattern on the substrate, and a spacer to cover side surfaces of the lower insulating pattern, a vertical structure through the isolation pattern to contact the substrate, the vertical structure having a first semiconductor layer on the substrate, a lower end of the first semiconductor layer being at a lower level than a lower surface of the isolation pattern, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer, and a gate electrode crossing the vertical structure and extending over the isolation pattern.. .

new patent

Method for making iii-v nanowire quantum well transistor

The present invention provides a filed effect transistor and the method for preparing such a filed effect transistor. The filed effect transistor comprises a semiconductor, germanium nanowires, a first iii-v compound layer surrounding the germanium nanowires, a semiconductor barrier layer, a gate dielectric layer and a gate electrode sequentially formed surrounding the first iii-v compound layer, and source/drain electrodes are respectively located at each side of the gate electrode and on the first iii-v compound layer.
Zing Semiconductor Corporation

new patent

Mim/rram structure with improved capacitance and reduced leakage current

Some embodiments of the present disclosure provide an integrated circuit (ic) device including a metal-insulator-metal (mim) capacitor structure. The mim capacitor structure includes a lower metal capacitor electrode, an upper metal capacitor electrode, and a capacitor dielectric separating the lower metal capacitor electrode from the upper metal capacitor electrode.
Taiwan Semiconductor Manufacturing Co., Ltd.

new patent

Organic light emitting display

An organic light emitting display includes a driving transistor, an organic light emitting diode, an interlayer insulating layer, and a connection electrode. The interlayer insulating layer covers the driving transistor, and first and second via holes are formed in the interlayer insulating layer.
Samsung Display Co., Ltd.

new patent

Thin film transistor substrate and organic light-emitting display using the same

A thin film transistor substrate that includes a substrate, a lower gate electrode arranged on the substrate, a semiconductor layer arranged on the substrate and overlapping the lower gate electrode, the semiconductor layer including a channel region interposed between a source region and a drain region, and an upper gate electrode arranged on the substrate and overlapping the semiconductor layer, the upper gate electrode being arranged on an opposite side of the semiconductor layer than the lower gate electrode, wherein at least one of the lower gate electrode and the upper gate electrode is perforated by an aperture to reduce a parasitic capacitance between the upper and lower gate electrodes.. .
Samsung Display Co., Ltd.,

new patent

Display device with separation member including steps

A display device includes: a substrate; a plurality of light-emission elements arranged, on the substrate, in a first direction and a second direction intersecting each other, each of the light-emission elements having a first electrode layer, an organic layer including a luminous layer, and a second electrode layer which are laminated in that order; and a separation section disposed, on the substrate, between the light-emission elements adjacent to each other in the first direction, the separation section having two or more pairs of steps. The first electrode layers in the light-emission elements are separated from each other, and the organic layers as well as the second electrode layers in the light-emission elements adjacent to each other in the first direction are separated from each other by the steps included in the separation section..
Sony Corporation

new patent

Organic el element and lighting device

An organic el element includes: a substrate that is light-transmissive; a pair of electrode layers (first electrode layer and second electrode layer) disposed above the substrate, at least one of the pair of electrode layers being light-transmissive; and a planar light-emitting layer disposed between the first electrode layer and second electrode layer. The first electrode layer is disposed in a first region in a plan view.
Panasonic Intellectual Property Management Co., Ltd.

new patent

Organic radiation-emitting component

An organic radiation-emitting component and a method for manufacturing an organic radiation-emitting component are disclosed. In an embodiment, the component includes a base substrate and a plurality of light-emitting units disposed on the base substrate, wherein the light-emitting units are arranged laterally offset with respect to one another, wherein the plurality of light-emitting units is divided into light-emitting units of a first type and light-emitting units of a second type, wherein a current flow through the light-emitting units of the first type is directed in an opposite direction to a current flow through the light-emitting units of the second type during operation, and wherein the light-emitting units are grouped in neighboring pairs, each neighboring pair consists of a light-emitting unit of a first type and a light-emitting unit of a second type, both first electrodes or both second electrodes of which are electrically connected to one another..
Osram Oled Gmbh

new patent

Array substrate, display device having the same, and manufacturing method thereof

The present application discloses an array substrate comprising a sub-pixel having a first light emitting area and a second light emitting area structurally different from the first light emitting area. The sub-pixel comprises a first electrode on a base substrate; a first light emitting layer in the first light emitting area and a second light emitting layer in the second light emitting area, the first light emitting layer and the second light emitting layer made of a same material and on a side of the first electrode distal to the base substrate; and a first tuning layer between the first light emitting layer and the first electrode in the first light emitting area..
Boe Technology Group Co., Ltd.

new patent

Production of transistor arrays

A method of producing a transistor array, comprising an array of addressing conductors each providing the source electrodes of a respective set of transistors and at least part of a conductive connection between a respective driver terminal and said source electrodes; wherein the method comprises: forming a conductor layer on a support; and displacing a plurality of portions of said conductor layer relative to other portions of said conductor layer to create from said conductor layer at least (i) said array of addressing conductors and an array of drain conductors at said first level, (ii) conductor element islands in transistor channel regions at a second level, and (iii) one or more further conductor elements at a third level.. .
Flexenable Limited

new patent

1-selector n-resistor memristive devices

A 1-selector n-resistor memristive device includes a first electrode, a selector, a plurality of memristors, and a plurality of second electrodes. The selector is coupled to the first electrode via a first interface of the selector.
Hewlett Packard Enterprise Development Lp

new patent

Integrated piezoelectric micromechanical ultrasonic transducer pixel and array

An ultrasonic sensor pixel includes a substrate, a piezoelectric micromechanical ultrasonic transducer (pmut) and a sensor pixel circuit. The pmut includes a piezoelectric layer stack including a piezoelectric layer disposed over a cavity, the cavity being disposed between the piezoelectric layer stack and the substrate, a reference electrode disposed between the piezoelectric layer and the cavity, and one or both of a receive electrode and a transmit electrode disposed on or proximate to a first surface of the piezoelectric layer, the first surface being opposite from the cavity.
Qualcomm Incorporated

new patent

Preparation poly-silicon tft array substrate and array substrate thereof

A preparation method of a poly-silicon thin film transistor (tft) array substrate and an array substrate thereof are provided. The preparation method includes: forming a photoresist layer on a poly-silicon layer, and exposing and developing the photoresist layer with a gray tone mask to form patterns of a photoresist completely-reserved region, a photoresist partially-reserved regions and a photoresist completely-removed region; removing part of the poly-silicon layer located in the photoresist completely-removed region, to form patterns of active layers; ashing the photoresist so as to expose part of the active layer located in the photoresist partially-reserved regions and inject p+ions of high concentration into the part of the active layer, to form doping regions of patterns of source-drain electrodes of a p-type tft; and stripping off remaining photoresist..
Boe Technology Group Co., Ltd.

new patent

Manufacture dual gate oxide semiconductor tft substrate and structure thereof

The present invention provides a manufacture method of an oxide semiconductor tft substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor tft substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (52′) with ion doping process, and the oxide conductor layer (52′) is employed as being the pixel electrode of the lcd to replace the ito pixel electrode in prior art; the method manufactures the source (81), the drain (82) and the top gate (71) at the same time with one photo process; the method implements patterning process to the passivation layer (8) and the top gate isolation layer (32) together with one photo process, to reduce the number of the photo processes to nine for shortening the manufacture procedure, raising the production efficiency and lowering the production cost..
Shenzhen China Star Optoelectronics Technology Co., Ltd.

new patent

Liquid crystal display device and manufacturing the same

Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer..
Samsung Display Co., Ltd.

new patent

Semiconductor device

According to one embodiment, a semiconductor device includes a stacked body; a columnar portion; a plate portion; and a blocking insulating film. The stacked body includes a plurality of electrode layers.
Kabushiki Kaisha Toshiba

new patent

Semiconductor device and manufacturing same

According to one embodiment, the stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction through the stacked body.
Kabushiki Kaisha Toshiba

new patent

Low power embedded one-time programmable (otp) structures

Devices and methods for forming a device are presented. The method includes providing a substrate prepared with at least a first region for accommodating an anti-fuse based memory cell.
Globalfoundries Singapore Pte. Ltd.

new patent

Semiconductor device

At least one of a plurality of transistors which are highly integrated in an element is provided with a back gate without increasing the number of manufacturing steps. In an element including a plurality of transistors which are longitudinally stacked, at least a transistor in an upper portion includes a metal oxide having semiconductor characteristics, a same layer as a gate electrode of a transistor in a lower portion is provided to overlap with a channel formation region of the transistor in an upper portion, and part of the same layer as the gate electrode functions as a back gate of the transistor in an upper portion.
Semiconductor Energy Laboratory Co., Ltd.

new patent

Transistor, fabricating the same, and electronic device including the same

A semiconductor device includes a stressed substrate stressed by a first stress, a first stressed channel formed in the substrate and having the first stress, and a first strained gate electrode strained by a first strain generating element. A first strained gate electrode is formed over the first stressed channel, the first strained gate electrode including a first lattice-mismatched layer to induce a second stress to the first stressed channel..
Sk Hynix Inc.

new patent

Semiconductor device and semiconductor integrated circuit using the same

A semiconductor device includes a channel region of a first conductivity type, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film, a first region of a second conductivity type and a second region of the second conductivity type, which are formed along the gate electrode while facing each other with the gate electrode interposed between the first region and the second region, a semiconductor region of the second conductivity type on which the first region, the second region and the channel region are formed, and an element isolation region which surrounds the semiconductor region. The gate electrode extends beyond a boundary portion between the channel region and the element isolation region.
Rohm Co., Ltd.

new patent

Semiconductor device and manufacturing method thereof

A semiconductor device includes first and second fin fet and a separation plug made of an insulating material and disposed between the first and second fin fets. The first fin fet includes a first fin structure extending in a first direction, a first gate dielectric formed over the first fin structure and a first gate electrode formed over the first gate dielectric and extending a second direction perpendicular to the first direction.
Taiwan Semiconductor Manufacturing Co., Ltd.

new patent

Semiconductor device and manufacturing semiconductor device

A second electrode provided on the fifth semiconductor region and the seventh semiconductor region.. .

new patent

Semiconductor devices having hybrid stacking structures and methods of fabricating the same

A semiconductor device having a chip stack and an interconnection terminal is provided. The chip stack includes a first semiconductor chip, a second semiconductor chip and a third semiconductor chip stacked on each other.

new patent

Stacked package structure and stacked packaging chip

A stacked package structure for a chip, can include: a substrate having a first surface and a second surface opposite thereto; a first die having an active and back faces, where the active face of the first die includes pads; a first enclosure that covers the first die; an interlinkage that extends to the first enclosure to electrically couple with the pads; a first redistribution body electrically coupled to the interlinkage, and being partially exposed on a surface of the stacked package structure to provide outer pins for electrically coupling to external circuitry; a penetrating body that penetrates the first enclosure and substrate; a second die having an electrode electrically coupled to a first terminal of the penetrating body; and a second terminal of the penetrating body that is exposed on the surface of the stacked package structure to provide outer pins for electrically coupling to the external circuitry.. .
Silergy Semiconductor Technology (hangzhou) Ltd

new patent

Trench mosfet with self-aligned body contact with spacer

Trench mosfet with self-aligned body contact with spacer. In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor substrate, and at least two gate trenches formed in the semiconductor substrate.
Vishay-siliconix

new patent

Integrated circuit with replacement gate stacks and forming same

A first aspect of the invention provides for a method including: forming an interfacial layer in a first opening in a pfet region and a second opening in an nfet region, each opening being in a dielectric layer in the pfet region and the nfet region; forming a high-k layer over the interfacial layer in each of the first and second openings; forming a wetting layer over the high-k layer in each of the first and second openings; forming a first metal layer in each of the first and second openings, the first metal layer including tungsten; and forming a first gate electrode layer over the first metal layer to substantially fill each of the first and second openings, thereby forming a first replacement gate stack over the pfet region and a second replacement gate stack over the nfet region.. .
International Business Machines Corporation

new patent

Pixelated capacitance controlled esc

Implementations described herein provide a chucking circuit for a pixilated electrostatic chuck which enables both lateral and azimuthal tuning of the rf coupling between an electrostatic chuck and a substrate placed thereon. In one embodiment, a chucking circuit for an electrostatic chuck (esc) has one or more chucking electrodes disposed in a dielectric body of the esc, a plurality of pixel electrodes disposed in the dielectric body, and a chucking circuit having the one or more chucking electrodes and the plurality of pixel electrodes, the chucking circuit operable to electrostatically chuck a substrate to a workpiece support surface of the esc, the chucking circuit having a plurality of secondary circuits, wherein each secondary circuit includes at least one capacitor of a plurality of capacitors, each secondary circuit is configured to independently control an impedance between one of the pixel electrodes and a ground..
Applied Materials, Inc.

new patent

Electrostatic chuck design for cooling-gas light-up prevention

An electrostatic chuck (esc) in a chamber of a semiconductor manufacturing apparatus is presented for eliminating cooling-gas light-up. One wafer support includes a baseplate connected to a radiofrequency power source, a dielectric block, gas supply channels for cooling the wafer bottom, and first and second electrodes.
Lam Research Corporation

new patent

Method of fabricating semiconductor device

Methods for fabricating semiconductor devices include forming a fin-type pattern protruding on a substrate, forming a gate electrode intersecting the fin-type pattern, forming a first recess adjacent to the gate electrode and within the fin-type pattern by using dry etching, forming a second recess by treating a surface of the first recess with a surface treatment process including a deposit process and an etch process, and forming an epitaxial pattern in the second recess.. .
Samsung Electronics Co., Ltd.

new patent

Ion implantation system and process

Ion implantation systems and processes are disclosed. An exemplary ion implantation system may include an ion source, an extraction manipulator, a magnetic analyzer, and an electrode assembly.
Advanced Ion Beam Technology, Inc.

new patent

Controlling an ion beam in a wide beam current operation range

Provided herein are approaches for controlling an ion beam within an accelerator/decelerator. In an exemplary approach, an ion implantation system includes an ion source for generating an ion beam, and a terminal suppression electrode coupled to a terminal, wherein the terminal suppression electrode is configured to conduct the ion beam through an aperture of the terminal suppression electrode and to apply a first potential to the ion beam from a first voltage supply.
Varian Semiconductor Equipment Associates, Inc.

new patent

Capacitors having engineered electrodes with very high energy density

An apparatus and associated method for an energy-storage device (e.g., a capacitor) having a plurality of electrically conducting electrodes including a first electrode and a second electrode separated by a non-electrically conducting region, and wherein the non-electrically conducting region further includes a non-uniform permittivity (k) value. In some embodiments, the method includes providing a substrate; fabricating a first electrode on the substrate; and fabricating a second electrode such that the second electrode is separated from the first electrode by a non-electrically conducting region, wherein the non-electrically conducting region has a non-uniform permittivity (k) value.
Granbluetech, L.l.c.

new patent

Flexible ti-in-zn-o transparent electrode for dye-sensitized solar cell, and metal-inserted three-layer transparent electrode with high conductivity using same and manufacturing method therefor

A flexible ti—in—zn—o transparent electrode for a dye-sensitized solar cell includes a flexible transparent substrate, and a ti—in—zn—o thin-film on the flexible transparent substrate. The ti—in—zn—o thin-film has an amorphous structure.
Korea Institute Of Industrial Technology

new patent

Solid electrolytic capacitor package structure and manufacturing the same

The instant disclosure provides a solid electrolytic capacitor package structure and method of manufacturing the same. The solid electrolytic capacitor package structure includes a capacitor assembly, at least one electrode pin and a package body enclosing the capacitor assembly and the electrode pin.
Apaq Technology Co., Ltd.

new patent

Electronic device sheet

The electronic device sheet comprises a pair of electrode layers, a dielectric layer provided between the pair of electrode layers, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the number of the insulation patch members is 1 or more and 1000 or less per 1 cm2 of the principal surface, and the total area of the insulation patch members is 10 μm2 or larger and 3 mm2 or smaller per 1 cm2 of the principal surface.. .
Tdk Corporation

new patent

Three-terminal capacitor

A three-terminal capacitor includes a capacitor element including first through sixth surfaces, first-side and second-side outer electrodes, a center outer electrode between the first-side and second-side outer electrodes, and conductor layers within the capacitor element. A height h2 is greater than a height h3, where the height h2 represents a higher one of a height at a center of a portion of the first-side outer electrode on the fifth surface and a height at a center of a portion of the first-side outer electrode on the sixth surface, and the height h3 represents a height at a center of a portion of the first-side outer electrode on the third surface, wherein the height h2 and the height h3 extend in the thickness direction..
Murata Manufacturing Co., Ltd.

new patent

Electronic component

An electronic component includes a main body, an inner conductor inside the main body, one or more outer electrodes on a bottom surface of the main body and not provided on four side surfaces of the main body, and a shield electrode covering the four side surfaces of the main body and having a cylindrical or substantially cylindrical shape, the shield electrode not being physically connected to any of the one or more outer electrodes at a surface of the main body and being connected to the inner conductor at a surface of the main body.. .
Murata Manufacturing Co., Ltd.

new patent

Multilayer electronic component and manufacturing the same

A multilayer electronic component includes: a multilayer body includes stacked insulating layers and internal coil parts disposed on the insulating layers; external electrodes disposed on an outer portion of the multilayer body and connected to the internal coil parts; and a material layer disposed on an outermost coil part among the internal coil parts and having a specific resistance that is lower than a specific resistance of the internal coil parts.. .
Samsung Electro-mechanics Co., Ltd.

new patent

A second electrode of the tfet transistor is connected to the read bit line.. .

new patent

Pixel array

A pixel array including first signal lines, second signal lines, active elements, pixel electrodes and selection lines is provided. The second signal lines and the selection lines are intersected with the first signal lines respectively.
E Ink Holdings Inc.

new patent

Liquid crystal display device

A liquid crystal display device includes a gate driving unit connected to an ith gate line and a first compensation line, a data driving unit connected to a jth data line and a pixel unit including a first switching element including a first electrode connected to the jth data line, a pixel electrode connected to second electrode of the first switching element, and a compensation capacitor including a first electrode connected to the first compensation line and a second electrode connected to the pixel electrode, where the gate driving unit includes a second switching element including a gate electrode connected to an i−1th gate line, a first electrode connected to a reset line, and a second electrode connected to the first compensation line, and a third switching element including a gate electrode connected to an i+1th gate line and a first electrode connected to the first compensation line.. .
Samsung Display Co., Ltd.

new patent

Array substrate and driving the same

An array substrate and a method for driving the array substrate are provided. The array substrate comprises a plurality of scan lines formed on a substrate in parallel, a plurality of data lines, which are formed on the substrate in a direction perpendicular to the respective scan lines, but disposed in a different layer from the scan lines, a plurality of pixel units respectively disposed in areas formed by the scan lines and the data lines, each pixel unit comprising at least one pixel electrode and at least two tft switches, wherein a first tft switch is used for pre-charging the pixel electrode, and a second tft switch is used for charging the pixel electrode with gray scale voltage.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

new patent

Pixel circuit and driving method thereof, organic light- emitting display device

A pixel circuit, a driving method of a pixel circuit and an organic light-emitting display device are provided. The pixel circuit includes a first transistor having a gate electrode receiving a first light-emitting signal, a first terminal receiving a first reference voltage, and a second terminal connected to a first node; a second transistor having a gate electrode receiving a first scanning signal, a first terminal receiving a second reference voltage, and a second terminal connected to a second node; a third transistor having a gate electrode connected to the second node, a first terminal connected to a third node and a second terminal connected to a fourth node; a fourth transistor having a gate electrode receiving a second scanning signal, a first terminal receiving a data signal, and a second terminal connected to the third node; a fifth transistor having a gate electrode receiving the second scanning signal, a first terminal connected to the fourth node, and a second terminal connected to the second node; a sixth transistor having a gate electrode receiving a second light-emitting signal, a first terminal receiving a first power supply voltage, and a second terminal connected to the third node; a seventh transistor having a gate electrode receiving the second light-emitting signal, a first terminal receiving the first power supply voltage, and a second terminal connected to the first node; an eighth transistor having a gate electrode receiving the second light-emitting signal and a first terminal connected to the fourth node; a light-emitting element having a first terminal connected to the second terminal of the eighth transistor and a second terminal receiving a second power supply voltage; and a first capacitor having a first terminal connected to the first node and a second terminal connected to the second node..
Tianma Microelectronics Co., Ltd.

new patent

Organic light-emitting display apparatus

An organic light-emitting display apparatus includes a substrate and an active layer disposed on the substrate. The active layer includes a source region, a drain region, and a channel region disposed between the source region and the drain region.
Samsung Display Co., Ltd.



Electrode topics:
  • Phosphoric Acid
  • Internal Combustion Engine
  • Carbon Atoms
  • Porous Carbon
  • Double Layer Capacitor
  • Graphene Oxide
  • Aqueous Solution
  • Lithium Ion
  • Exhaust Gas
  • Soot Sensor
  • Combustion
  • Calibration
  • Electronic Apparatus
  • Electrical Signal
  • Electric Conversion


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