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Electrode patents

      

This page is updated frequently with new Electrode-related patent applications.




 Wiring module patent thumbnailWiring module
A wiring module includes: an insulating protector that has connection member holding portions for holding connection members that electrically connect adjacent electrode terminals; and a temperature detection member that detects the temperature of one of the connection members. The temperature detection member has a temperature detection element, electrical wires that are connected to the temperature detection element, an element accommodating portion that accommodates the temperature detection element and from which the electrical wires extend, and a detection portion that is continuous with the element accommodating portion and is arranged to be in contact with the connection member.
Sumitomo Electric Industries, Ltd.


 Detection  electronic devices and electronic device transfer module having detecting elements patent thumbnailDetection electronic devices and electronic device transfer module having detecting elements
A detection method for electronic devices including steps as follows is provided. The detection method includes: providing an electronic device substrate; attaching a portion of electronic devices of the electronic device substrate through an electronic device transfer module, wherein the electronic device transfer module includes a plurality of detecting elements corresponding to the portion of the electronic devices, and each of the detecting elements includes at least one pair of electrodes; detecting whether a conducting path between the at least one pair of electrodes is generated or not to confirm a status of contact between the portion of the electronic devices and a contact target; and transferring the portion of the electronic devices attached to the electronic device transfer module to a target substrate.
Industrial Technology Research Institute


 Method for manufacturing circuit board and circuit board patent thumbnailMethod for manufacturing circuit board and circuit board
The present invention relates to a method for manufacturing a circuit board including the steps of preparing a substrate containing silicon at least at a surface, applying a paste containing aluminum particles onto the substrate, forming a conductor layer on the substrate by firing the substrate to which the paste has been applied, forming a resist film having a specific pattern on the conductor layer, and removing with an etchant, the conductor layer in a portion where the resist film has not been formed, the etchant containing fluoride ions and metal ions of a metal m of which standard electrode potential is higher in value than a standard electrode potential of aluminum, and to a circuit board which can be manufactured with such a method.. .
Toyo Aluminium Kabushiki Kaisha


 Ceramic circuit board, electronic circuit module, and  manufacturing electronic circuit module patent thumbnailCeramic circuit board, electronic circuit module, and manufacturing electronic circuit module
A ceramic circuit board that includes a ceramic insulator layer, grounding pattern conductors, connection lands disposed on a first surface of the ceramic circuit board, and grounding electrodes disposed on a second surface of the ceramic circuit board and connected to the grounding pattern conductors. Each of the grounding pattern conductors contains a metal and an oxide and includes a pattern main portion disposed inside the ceramic circuit board and an extended portion in which a first end thereof is connected to the pattern main portion and a second end thereof is exposed at a side surface of the ceramic circuit board.
Murata Manufacturing Co., Ltd.


 Multi-chip module and  manufacturing same patent thumbnailMulti-chip module and manufacturing same
A multi-chip module includes a plurality of chip parts with each chip part having an electrode, a sealing resin for sealing the plurality of chip parts, and an external connection terminal secured to the sealing resin so as to be exposed from the outer surface of the sealing resin and electrically connected to the electrode of at least one of the chip parts.. .
Rohm Co., Ltd.


 Electronic component-use package and piezoelectric device patent thumbnailElectronic component-use package and piezoelectric device
An electronic component-use package includes a base that holds an electronic component element, and terminal electrodes formed on a bottom surface of the base. The terminal electrodes have chamfered parts facing corner parts of the base bottom surface and having angles of chamfer ranging in ±10 degrees to a reference line.
Daishinku Corporation


 Dc plasma torch electrical power design method and apparatus patent thumbnailDc plasma torch electrical power design method and apparatus
A method and apparatus for operating a dc plasma torch. The power supply used is at least two times the average operating voltage used, resulting in a more stable operation of the torch.
Monolith Materials, Inc.


 Apparatus and method to electrically power an electric arc furnace patent thumbnailApparatus and method to electrically power an electric arc furnace
An electric power apparatus for an electric arc furnace comprises at least one electrode and is connectable to a power network to supply to the electrode the electric energy to generate an electric arc to melt a metal mass. The apparatus comprises an electric regulation unit interposed and connected to the power network and to the electrode and configured to regulate at least one electric quantity for powering the electrode.
Danieli Automation Spa


 Sound transducer structure and  manufacturing a sound transducer structure patent thumbnailSound transducer structure and manufacturing a sound transducer structure
A sound transducer structure includes a membrane and a counter electrode. The membrane includes a first main surface in a sound transducing region made of a membrane material, and an edge region.
Infineon Technologies Ag


 One-port surface elastic wave resonator on high permittivity substrate patent thumbnailOne-port surface elastic wave resonator on high permittivity substrate
A surface elastic wave resonator comprises a piezoelectric material to propagate the surface elastic waves and a transducer inserted between a pair of reflectors comprising combs of interdigitated electrodes and having a number nc of electrodes connected to a hot spot and an acoustic aperture w wherein the relative permittivity of the piezoelectric material is greater than about 15, a product of nc·w/fa for the transducer being greater than 100 μm·mhz−1, where fa is the antiresonance frequency of the resonator. A circuit comprises a load impedance and a resonator according to the invention and having an electrical response manifesting as a peak in the coefficient of reflection s11 at a frequency of a minimum value of the parameter s11 that is lower than −10 db, the antiresonance peak of the resonator being matched to the impedance of the load..
Senseor


Semiconductor device for radio frequency switch, radio frequency switch, and radio frequency module

Provided is a semiconductor device for radio frequency switch that includes an soi substrate and a gate electrode. The soi substrate includes a buried oxide film and a semiconductor layer on a carrier substrate.
Sony Corporation

Piezoelectric thin film resonator, filter, and duplexer

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate and having a poisson's ratio of 0.33 or less; a lower electrode and an upper electrode facing each other across the piezoelectric film; and an insertion film that is located in the piezoelectric film or on a lower surface or an upper surface of the piezoelectric film in an outer peripheral region within a resonance region, in which the lower electrode and the upper electrode face each other across the piezoelectric film, and is not located in a center region of the resonance region, wherein at least one of the lower electrode, the piezoelectric film, and the upper electrode in the outer peripheral region within the resonance region is thinner than the at least one of the lower electrode, the piezoelectric film, and the upper electrode in the center region of the resonance region.. .
Taiyo Yuden Co., Ltd.

Stealth-dicing compatible devices and methods to prevent acoustic backside reflections on acoustic wave devices

Stealth-dicing-compatible devices and methods to prevent acoustic backside reflections on acoustic wave devices are disclosed. An acoustic wave device comprises a substrate having opposing top and bottom surfaces, where a first portion of the bottom surface has a higher roughness than a second portion of the bottom surface, and an acoustic resonator over the top surface of the substrate.
Rf Micro Devices, Inc.

Bulk acoustic wave (baw) device having roughened bottom side

A bulk acoustic wave (baw) resonator includes a substrate having a top side surface and a bottom side surface. A bragg mirror is on the top side surface of the substrate.
Texas Instruments Incorporated

Acoustic wave device and module

An acoustic wave device includes: a support substrate; a piezoelectric substrate bonded on an upper surface of the support substrate at room temperature and made of a different material from the support substrate; a comb-shaped electrode formed on an upper surface of the piezoelectric substrate and exciting an acoustic wave; and an amorphous layer formed between the support substrate and the piezoelectric substrate.. .
Taiyo Yuden Co., Ltd.

Bonded wafers and surface acoustic wave devices using same

A bonded wafer with low carrier lifetime in silicon comprises a silicon substrate having opposing top and bottom surfaces, the structure of the silicon in a top portion of the silicon substrate having been modified to reduce the carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion; a piezoelectric layer bonded over the top surface of the silicon substrate and having opposing top and bottom surfaces separated by a distance t; and a pair of electrodes having fingers that are inter-digitally dispersed on the top surface of the piezoelectric layer in a pattern having a center-to-center distance d between adjacent fingers of the same electrode, the electrodes comprising a portion of a surface acoustic wave (saw) device. Modification of the top portion of the silicon substrate prevents the creation of a parasitic conductance within the top portion of the silicon substrate during operation of the saw device..
Rf Micro Devices, Inc.

Electronic component and manufacturing method therefor

An electronic component includes a functional electrode provided on a first substrate that has a rectangular or substantially rectangular plate shape and a support layer including resin that surrounds the functional electrode. A cover member closes an opening of the support layer.
Murata Manufacturing Co., Ltd.

Methods for fabrication of bonded wafers and surface acoustic wave devices using same

A method of fabricating a bonded wafer with low carrier lifetime in silicon comprises providing a silicon substrate having opposing top and bottom surfaces, modifying a top portion of the silicon substrate to reduce carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion, bonding a piezoelectric layer having opposing top and bottom surfaces separated by a distance t over the top surface of the silicon substrate, and providing a pair of electrodes having fingers that are inter-digitally dispersed on a top surface of the piezoelectric layer, the electrodes comprising a portion of a surface acoustic wave (saw) device. The modifying and bonding steps may be performed in any order.
Rf Micro Devices, Inc.

Power conversion apparatus

A power conversion apparatus includes a power conversion circuit, a choke coil, an auxiliary coil, and a rectifier element. The choke coil is disposed between the power conversion circuit and an input side direct current power source.
Denso Corporation

Battery balancing apparatus and battery balancing method thereof

A battery balancing apparatus configured to perform a battery balancing for a battery pack is provided. The battery balancing apparatus includes n energy storage elements connected in series, n resistors connected in series and a switch unit.
Acer Incorporated

Spark plug

Disclosed is a spark plug with improved lifetime. The spark plug includes a first electrode and a second electrode having an electrode base and an electrode tip joined to the electrode base with a gap defined between the first electrode and the electrode tip.
Ngk Spark Plug Co., Ltd.

Spark plug

A spark plug wherein least one of a center electrode and ground electrode includes a shaft portion and an electrode tip joined to one surface of the shaft portion. The shaft portion includes a first core formed of a material containing copper and a first outer layer that is formed of a material having higher corrosion resistance than the first core and covers at least part of the first core.
Ngk Spark Plug Co., Ltd.

Light emitting element

A light emitting element includes at least a first light reflecting layer 41 formed on a surface of a substrate 11, a laminated structural body 20 made of a first compound semiconductor layer 21, an active layer 23 and a second compound semiconductor layer 22 formed on the first light reflecting layer 41, and a second electrode 32 and a second light reflecting layer 42 formed on the second compound semiconductor layer 22, the laminated structural body 20 is configured from a plurality of laminated structural body units 20a, a light emitting element unit 10a is configured from each of the laminated structural body units 20a, and a resonator length in the light emitting element unit 10a is different in every light emitting element unit.. .
Sony Corporation

Optical module, optical apparatus, fabricating optical module

An optical module includes a bench part and a cap on the bench part. The bench part includes a bench, an electrode, a semiconductor optical device and a lens.
Sumitomo Electric Industries, Ltd.

Gas laser device and condenser

A gas laser device may include: a laser chamber containing laser gas; a first discharge electrode disposed in the laser chamber; a second discharge electrode disposed to face the first discharge electrode in the laser chamber; and a condenser including a polyimide dielectric and configured to supply power to between the first discharge electrode and the second discharge electrode.. .
Gigaphoton Inc.

Non-aqueous electrolyte secondary battery

A non-aqueous electrolyte secondary battery includes a power generating element having a positive electrode having a positive electrode active material layer containing lithium-nickel-manganese-cobalt composite oxide on a surface of a current collector, an electrolyte layer, and a negative electrode. At least one of the following conditions (1) to (4) is satisfied.
Nissan Motor Co., Ltd.

Secondary cell state detector

A condenser is connected to both electrodes of a secondary cell. A first switch is provided between a positive electrode of the secondary cell and a one-side plate of the condenser.
Yazaki Corporation

Secondary cell state detector

One-side plates of first and second condensers are connected to a one-side electrode of one of a plurality of secondary cells. First switches connect the other-side electrode of the secondary cell to the other-side plate of one of the first condenser and the second condenser.
Yazaki Corporation

Hybrid electrode assembly of stair-like structure

Disclosed herein is an electrode assembly including unit cells, each of which is constituted by an electrode plate stack configured to have a structure in which a separator is disposed between electrode plates comprising positive electrodes or negative electrodes, wherein the electrode assembly includes a combination of two or more kinds of unit cells having different sizes, the unit cells are stacked in a height direction on the basis of a plane, two or more of the unit cells located at a lower part of the electrode assembly, i.e. Two or more base unit cells, are wound using a single sheet-type separation film to constitute an integrated base structure, and the others of the unit cells excluding the base unit cells, i.e.
Lg Chem, Ltd.

Secondary battery and manufacturing the same

A secondary battery includes an laminated electrode in which positive electrode (1) and a negative electrode are arranged with a separator interposed therebetween. Positive electrode collector foil (3) is made of aluminum or an aluminum alloy.
Nec Energy Devices, Ltd.

Electrode assembly, all-solid state secondary battery, and producing electrode assembly

A positive electrode layer as an electrode assembly includes an active material portion which contains a transition metal oxide as an active material and a solid electrolyte portion which is in contact with the active material portion and contains an ion conductive solid, and the crystal plane orientation of a crystal plane of the transition metal oxide and the crystal plane orientation of a crystal plane of the ion conductive solid substantially coincide with each other and are oriented in the thickness direction of the positive electrode layer.. .
Seiko Epson Corporation

Cable-type secondary battery

The present disclosure provides a cable-type secondary battery, comprising: an inner electrode; a separation layer surrounding the outer surface of the inner electrode to prevent a short circuit between electrodes; and a sheet-form outer electrode spirally wound to surround the separation layer or the inner electrode.. .
Lg Chem, Ltd.

Semi-solid electrodes having high rate capability

Embodiments described herein relate generally to electrochemical cells having high rate capability, and more particularly to devices, systems and methods of producing high capacity and high rate capability batteries having relatively thick semi-solid electrodes. In some embodiments, an electrochemical cell includes an anode, a semi-solid cathode that includes a suspension of an active material and a conductive material in a liquid electrolyte, and an ion permeable membrane disposed between the anode and the cathode.
24m Technologies, Inc.

Semi-solid electrodes having high rate capability

Embodiments described herein relate generally to electrochemical cells having high rate capability, and more particularly to devices, systems and methods of producing high capacity and high rate capability batteries having relatively thick semi-solid electrodes. In some embodiments, an electrochemical cell includes an anode and a semi-solid cathode.
24m Technologies, Inc.

Polymer electrolyte composition and polymer electrolyte membrane, polymer electrolyte membrane with catalyst layer, membrane electrode assembly, and polymer electrolyte fuel cell each using the same

An excellent polymer electrolyte composition has excellent chemical stability of being resistant to strong oxidizing atmosphere during operation of fuel cell, and achieves excellent proton conductivity under low-humidification conditions, excellent mechanical strength and physical durability. A polymer electrolyte membrane, a membrane electrode assembly, and a polymer electrolyte fuel cell each use the same.
Ford Motor Company

Device and manufacturing membrane-electrode assembly of fuel cell

A manufacturing device of a membrane-electrode assembly for a fuel cell bonds each of anode and cathode catalyst electrode layers continuously formed in upper and lower electrode films to upper and lower surfaces of an electrolyte membrane. The device includes: upper and lower bonding rolls respectively installed to upper and lower sides of a transport path of the electrolyte membrane and of the upper and lower electrode films, the bonding rolls pressing the catalyst electrode layers to the upper surface and the lower surface of the electrolyte membrane at a predetermined temperature to be transferred, and upper and lower adsorbents respectively disposed at the upper and lower sides of the transport path in an entry side of the upper and lower bonding rolls, installed to be reciprocally moved along the transport path, and selectively adsorbing the upper and lower electrode films..
Hyundai Motor Company

Aqueous all-copper redox flow battery

The present disclosure relates to aqueous all-copper redox flow batteries. This battery comprises at least one first and second half-cell compartments including the first and second aqueous electrolyte solutions comprising a copper compound and supporting electrolytes and a first and second electrodes.
Aalto University Foundation

Resin-framed membrane electrode assembly and fuel cell

A solid polymer electrolyte membrane is made from a solid polymer electrolyte membrane roll in which a solid polymer electrolyte membrane sheet is wound in a winding direction. A first electrode is disposed on a first surface of the solid polymer electrolyte membrane in a stacking direction.
Honda Motor Co., Ltd.

High energy and power electrochemical device and making and using same

An electrolyte is introduced into an electrochemical device, passed, via a first corrugation feature, through a first electrode of the electrochemical device, passed through an ion permeable separator, and contacted with a second electrode. The first or second electrode comprises a second corrugation feature in fluid communication with the first corrugation feature to contact the electrolyte across a portion of an active surface of the first or second electrode..
Ada Technologies, Inc.

Electrode catalyst ink composition

An electrode catalyst ink composition which includes metal oxide-based electrode catalyst particles, an electrolyte, and a mixed liquid medium, wherein the mixed liquid medium contains 40 to 85% by mass of water; 5 to 30% by mass of an aqueous solvent (a) that has an evaporation rate of 2.0 or lower when the evaporation rate of water at 25° c. Is 1, and a solubility parameter (sp value) of not less than 9; and 10 to 30% by mass of a monoalcohol (b) that has an evaporation rate of higher than 2.0 when the evaporation rate of water at 25° c.
Showa Denko K.k.

Method for producing fuel cell catalyst

The present invention is to provide a method for producing a fuel cell catalyst that is configured to be able to increase the power generation performance of a membrane-electrode assembly. Disclosed is a method for producing a fuel cell catalyst, wherein the method comprises: a mixing step in which, by mixing a platinum-containing solution, a titanium-containing solution and an electroconductive support in a solvent, a catalyst precursor in which a platinum ion compound and a titanium ion compound are supported on the electroconductive support, is formed; a solvent removing step in which, by removing the solvent from a mixture thus obtained after the mixing step, the catalyst precursor is obtained; a firing step in which, by firing the catalyst precursor at a temperature of 500 to 900° c.
Toyota Jidosha Kabushiki Kaisha

Electrode assembly comprising fiber-shaped structures

The present invention relates to an electrode assembly comprising fiber-shaped structures. The electrode assembly for a battery according to one embodiment of the present invention comprises: a first electrode including a plurality of first fiber-shaped structures extending in a first direction; a second electrode including a plurality of second fiber-shaped structures which extend in a second direction other than the first direction, and the polarities of which are different from the polarities of the first structures; and a first separator film interposed between the first structures and the second structures which intersect with each other, so as to separate the first structures and the second structures from each other..
Jenax Inc.

Method for producing an electrode of a lithium-ion battery

A method for producing an electrode of a lithium-ion battery having the steps of providing a precursor including an electrode active material and lif, of providing a metal foil and of joining the precursor and the metal foil. Furthermore, a method for producing a lithium-ion battery is provided as well as electrodes and lithium-ion batteries that are producible according to the method..
Robert Bosch Gmbh

Bisphenol-based resin, electrode, lead storage battery, production methods for these, and resin composition

A bisphenol-based resin obtained by a reaction of (a) a bisphenol-based compound, (b) at least one selected from the group consisting of aminobenzenesulfonic acids and aminobenzenesulfonic acid derivatives, and (c) at least one selected from the group consisting of formaldehyde and formaldehyde derivatives, wherein a content of a structural unit that is obtained by the reaction of the component (a), the component (b) and the component (c) and also has a benzoxazine ring is 15 mass % or less.. .
Hitachi Chemical Company, Ltd.

Amorphous carbon coating of carbonaceous particles from dispersions including amphiphilic organic compounds

The present disclosure relates to a process for preparing surface-modified carbonaceous particles, wherein said carbonaceous particles are coated with a surface layer of amorphous carbon by dispersing carbonaceous material with an amphiphilic compound, spray drying of the dispersion and subsequent calcination of the dried material. The disclosure also pertains to surface-modified carbonaceous particles coated with amorphous carbon, which can for example be obtained by the process of the invention.
Imerys Graphite & Carbon Switzerland Ltd.

Secondary battery

A secondary battery in which the difference between the voltage at the time of discharging and the voltage at the time of charging is small, ensuring good energy efficiency, and the charge/discharge life is long. Therefore, in order to attain the above-described object, a secondary battery containing a positive electrode, a negative electrode, and an electrolytic solution, wherein at least one of the positive electrode and the negative electrode contains, as the active material, at least one selected from the group consisting of a metal ion-containing fluoride, a metal oxide, a metal sulfide, a metal nitride, and a metal phosphide; the electrolytic solution contains an anion receptor; and the anion receptor forms a salt or a complex with an anion contained in the active material, thereby enabling the active material to dissolve in the electrolytic solution..
Honda Motor Co., Ltd.

Negative electrode active material for secondary battery and manufacturig same

Provided is an anode active material for a secondary battery and a method of fabricating the anode active material. A silicon-based active material composite according to an embodiment of the inventive concept includes silicon and silicon oxide obtained by oxidizing at least a part of the silicon, and an amount of oxygen with respect to a total weight of the silicon and the silicon oxide is restricted to 9 wt % to 20 wt %..
Orange Power Ltd.

Negative electrode active material, producing same, and electrical storage device

Provided is a negative electrode active material including complex particles formed of: nano silicon aggregated particles produced by heating a layered polysilane represented by a composition formula of (sih)n and having a structure in which multiple six-membered rings formed from silicon atoms are connected; and a composited carbon layer formed from an amorphous carbon and at least covering one portion of the aggregated particles. A mean particle diameter d50 of the aggregated particles is within a range of 0.2 μm to 30 μm, and a mean particle diameter d50 of the complex particles is within a range of 0.5 μm to 40 μm..
Kabushiki Kaisha Toyota Jidoshokki

Positive electrode material, preparing the same and li-ion battery containing the positive electrode material

The present application provides a positive electrode material, a method for preparing the same and a li-ion battery containing the positive electrode material, wherein, the positive electrode material is represented as li1+xniacobmncmdo2, in which m is selected from one or more of mg, ti, zn, zr, al and nb. The positive electrode material provided by the present application has a small crystal volume and a small li—ni synchysis degree.
Ningde Contemporary Amperex Technology Limited

Alkaline storage battery

An alkaline storage battery contains: a positive electrode; a negative electrode containing, as an active material, at least one of a metal capable of forming a dendrite and a metal compound thereof; and an alkaline electrolyte. The alkaline electrolyte contains a compound which is a chain saturated hydrocarbon at least partially having a hydrophilic functional group other than a hydroxyl group and having a molecular weight of 400 or more and less than 220000 in an amount of less than 15 g per 100 ml of the electrolyte..
Kyoto University

Electrode for lithium-ion cell, lithium-ion cell, and manufacturing electrode for lithium-ion cell

The present invention aims to provide an electrode for lithium ion batteries which exhibits excellent electrical conductivity even if its thickness is large. The electrode for lithium ion batteries of the present invention includes a first main surface to be located adjacent to a separator of a lithium ion battery and a second main surface to be located adjacent to a current collector of the lithium ion battery.
Nissan Motor Co., Ltd.

Connector from the tab of an electrode current collector to the terminal pin of a feedthrough in an electrochemical cell

A process for creating a laser braze weld joint between a current collector and a terminal pin in the construction of electrochemical cells is described. The laser braze welding process utilizes a laser weld instrument to create a braze-like joint between two work pieces.
Greatbatch Ltd.

Laminated multilayer membranes, separators, batteries, and methods

Disclosed herein are novel or improved microporous battery separator membranes, separators, batteries including such separators, methods of making such membranes, separators, and/or batteries, and/or methods of using such membranes, separators and/or batteries. Further disclosed are laminated multilayer polyolefin membranes with exterior layers comprising one or more polyethylenes, which exterior layers are designed to provide an exterior surface that has a low pin removal force.
Celgard, Llc

Storage battery

A storage battery includes a negative electrode including, as an active material, at least one of a metal capable of forming a dendrite and a metal compound thereof, a positive electrode, a separator, and an electrolyte containing an additive. In the storage battery, a concentration of the additive in the electrolyte in a region on a side of the negative electrode defined by the separator is higher than a concentration of the additive in a region on a side of the positive electrode..
Kyoto University

Electricity storage device

An electricity storage device includes: an electrode group that includes a first electrode, a second electrode, and a separator electrically insulating the first electrode from the second electrode; an electrolyte; a case that accommodates the electrode group and the electrolyte and has an opening; and a sealing plate that seals the opening of the case. The sealing plate has a degassing valve.
Sumitomo Electric Industries, Ltd.

Electricity storage system

An electricity storage system includes a plurality of electricity storage elements, a partition member, a pair of end plates, and a plurality of coupling members. The case includes a flat surface that has a first region opposed to a positive-electrode active material layer and a negative-electrode active material layer of a power generation element, and a second region other than the first region.
Toyota Jidosha Kabushiki Kaisha

Battery pack having fixing part for pcm

Disclosed herein is a battery pack configured to have a structure including a plate-shaped battery cell having electrode terminals formed at one side thereof including a sealed surplus part and a protection circuit module (pcm) mounted at the sealed surplus part, wherein each of the electrode terminals of the battery cell is made of a plate-shaped conductive member, the pcm includes a protection circuit board (pcb), a safety element electrically connected between one of the electrode terminals of the battery cell and the pcb or loaded on the pcb, an external input and output terminal electrically connected to a protection circuit of the pcb, and an electrically insulative module case in which the pcb and the safety element are mounted in a state in which the external input and output terminal extends outside, the module case includes a pcb receiving part open outward at one side thereof and at least one fixing part to mount the module case to the sealed surplus part of the battery cell, and the pcm is loaded on the sealed surplus part of the battery cell while being received in the module case in a state in which the pcm is electrically connected to the electrode terminals of the battery cell.. .
Lg Chem, Ltd.

Heat-sealable insulating film for secondary battery

A heat-sealable insulating film for installation in a secondary battery including a positive electrode member and a negative electrode member being formed from a collector foil and an active material layer formed to cover one end on the collector foil, wherein an adhesive layer is adhered by heat-sealing to cover at least a boundary of an exposed part of the collector foil and the active material layer of the positive electrode member or the negative electrode member, a peripheral edge of the positive electrode member or the negative electrode member has a cross-sectional surface including the collector foil and the insulating film, and the insulating film consists of at least two layers of a base material layer made of a polyolefin resin and the adhesive layer made of a polyolefin resin modified with an unsaturated carboxylic acid or a derivative thereof. .
Automotive Energy Supply Corporation

Power storage device, battery management unit, and electronic device

A repeatedly bendable power storage device. A highly reliable power storage device.
Semiconductor Energy Laboratory Co., Ltd.

Rechargeable battery including multiple cases

A rechargeable battery includes a battery cell having an inner case housing an electrode assembly and a cap plate combined with the inner case, and an outer case housing the battery cell, the outer case including an upper case having an opening at a first side of the upper case, and a lower case having an opening at a side facing the opening of the upper case.. .
Samsung Sdi Co., Ltd.

Light-emitting element, light-emitting device, electronic device, and lighting device

Provided is a light-emitting device which can emit monochromatic light with high purity due to a microcavity effect and which can emit white light in the case of a combination of monochromatic light. Provided is a high-definition light-emitting device.
Semiconductor Energy Laboratory Co., Ltd.

Photoactive birefringent materials in oleds

The invention relates to an organic light-emitting diode (oled) system comprising a multi-layered structure having at least two reflective interfaces, and a semiconducting organic layer sandwiched between first and second electrodes; wherein at least one of the reflective interfaces is semi-transparent to form a microcavity in between the two reflective interfaces; wherein a layer is provided in the microcavity between an electrode and a reflective interface that is formed of a photoactive birefringent material; and wherein the photoactive birefringent material is selectively activated.. .
Nederlandse Organisatie Voor Toegepast-natuurwe- Tenschappelijk Onderzoek Tno

Organic light emitting display device

Disclosed is an organic light emitting display device. The organic light emitting display device includes a first emission part between a first electrode and a second electrode, a second emission part on the first emission part, and a first charge generation layer and a second charge generation layer between the first emission part and the second emission part.
Lg Display Co., Ltd.

Organic light-emitting element

In which a refractive index of a first charge transport layer (51) formed between a light extraction electrode (4) and the first emission layer (52) at the wavelength λ1 is 1.70 or less.. .

Method of manufacturing display device

A method of manufacturing a display device includes forming an electrode layer including a first metallic element on a substrate; sequentially forming an insulating layer including a first material and a photosensitive pattern layer including a first pattern on the electrode layer; forming a plurality of fine patterns including a first layer that includes the first material and a second layer by etching the photosensitive pattern layer and the insulating layer; and forming a plurality of scattering bumps by removing the second layer of each of the plurality of fine patterns.. .
Samsung Display Co., Ltd.

Organic light emitting display device

Disclosed is an organic light emitting display device that comprises a first light emitting unit between a first electrode and a second electrode, the first light emitting unit including a first hole transporting layer and a first light emitting layer; and a second light emitting unit between the first light emitting unit and the second electrode, the second light emitting unit including a second hole transporting layer and a second light emitting layer that emits a light of the same color as a light emitted by the first light emitting layer. An increase in driving voltage caused by a shift of an emission zone in the first light emitting layer or the second light emitting layer by prolonged driving is minimized which solves a problem of increased power consumption and improves the lifetime of the organic light emitting display device..
Lg Display Co., Ltd.

Organic light-emitting device

An organic light-emitting device is provided to have high efficiency and long lifespan. The organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a host and a dopant; an electron blocking layer disposed between the first electrode and the emission layer; and an electron transport region disposed between the emission layer and the second electrode, in which the electron blocking layer includes a metal halide, a metal oxide, or a combination thereof, and the actually measured lowest unoccupied molecular orbital (lumo) value of the electron blocking layer is greater than the actually measured lumo value of the host in the emission layer..
Samsung Display Co., Ltd.

Light-emitting element

Provided is a light-emitting element with high external quantum efficiency and a low drive voltage. The light-emitting element includes a light-emitting layer which contains a phosphorescent compound and a material exhibiting thermally activated delayed fluorescence between a pair of electrodes, wherein a peak of a fluorescence spectrum and/or a peak of a phosphorescence spectrum of the material exhibiting thermally activated delayed fluorescence overlap(s) with a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound, and wherein the phosphorescent compound exhibits phosphorescence in the light-emitting layer by voltage application between the pair of electrodes..
Semiconductor Energy Laboratory Co., Ltd.

Organic el display panel production method

A method for manufacturing an organic el display panel, including: forming first electrodes over a substrate; defining, above the substrate, pixel formation regions lining up in a row direction and a column direction, by forming banks over the substrate; applying ink to each pixel formation region by causing a plurality of nozzles lining up in a straight line to discharge the ink to the pixel formation regions while displacing the nozzles relative to the substrate in a scanning direction; drying the ink to form functional layers in the pixel formation regions; and forming a second electrode at a position covering the pixel formation regions. In the application of ink, an angle θ between the scanning direction and the row direction is set to more than 0° and less than 90° and each nozzle applies the ink across a plurality of rows of the pixel formation regions..
Joled Inc.

Method for manufacturing display device and manufacturing electronic device

Provided is a method for manufacturing a highly reliable display device. The method includes steps of providing a first layer, a first insulating layer, an electrode, and a second insulating layer over a first surface of a first substrate; removing a part of the second insulating layer to provide a first opening; providing a display element and a second layer over the second insulating layer; providing a third layer and a third insulating layer over a second surface of a second substrate; removing part of the third layer and part of the third insulating layer to provide a second opening; overlapping the first substrate and the second substrate with a bonding layer positioned therebetween such that the first surface and the second surface face each other and the first opening and the second opening have an overlap region; separating the first substrate and the first layer from the first insulating layer; providing a third substrate such that the first insulating layer and the third substrate overlap with each other; separating the second substrate, part of the bonding layer, part of the second layer, and the third layer from the third insulating layer; and providing a fourth substrate such that the third insulating layer and the fourth substrate overlap with each other..
Semiconductor Energy Laboratory Co., Ltd.

Physical cleaning with in-situ dielectric encapsulation layer for spintronic device application

A method for etching a magnetic tunneling junction (mtj) structure is described. A stack of mtj layers is provided on a bottom electrode in a substrate.
Headway Technologies, Inc.

Button device using piezoelectric element

A button device includes a piezoelectric element which includes a piezoelectric body with one surface on which a first external electrode and a second external electrode are formed and a plate with one surface attached to the other surface of the piezoelectric body, a supporting plate disposed on the one surface of the piezoelectric body, a cover disposed on the other surface of the plate, a first spacer provided between an edge portion of the one surface of the plate and the supporting plate, a second spacer provided between at least a part of an edge portion of the other surface of the plate and the cover to provide a separation space between the plate and the cover, and a dot provided in the separation space to transfer an external force to the piezoelectric element or to transfer a vibration of the piezoelectric element to the cover.. .
Wisol Co., Ltd.

Microelectromechanical generating a physical effect

A microelectromechanical apparatus for generating a physical effect, including an array of moving elements, each coupled to a mechanical support by at least one flexure which is associated with at least one piezoelectric member which is operable to be strained by an electrical field applied to the piezoelectric member, thereby flexing the flexure to which the piezoelectric member is coupled; an electrical wiring, including a group of electrodes, wherein each electrode out of the group of electrodes is coupled to at least one of the piezoelectric members; wherein the electrical wiring is operable to concurrently transfer different sequences of electric fields to different piezoelectric members, thereby controllably inducing movement of moving elements of the array for creating the physical effect; and a motion restriction mechanism for maintaining a maximal motion distance for each of the moving elements when actuated via the corresponding flexure and piezoelectric member.. .
Audio Pixels Ltd.

Trilayer josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits

A technique relates to a trilayer josephson junction structure. A dielectric layer is on a base electrode layer that is on a substrate.
International Business Machines Corporation

Light-emitting diode (led) package

A light-emitting diode (led) package includes a light-emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; an isolating insulation layer; a first connection electrode portion and a second connection electrode portion electrically connected to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, respectively; a first electrode pad and a second electrode pad electrically connected to the first connection electrode portion and the second connection electrode portion, respectively; a first molding resin layer provided between the first electrode pad and the second electrode pad; a first pillar electrode and a second pillar electrode electrically connected to the first electrode pad and the second electrode pad, respectively; and a second molding resin layer provided on the first molding resin layer, the first electrode pad, and the second electrode pad, and between the first pillar electrode and the second pillar electrode.. .
Samsung Electronics Co., Ltd.

Substrate for light emitting device, light emitting device, and manufacturing substrate for light emitting device

There is provided a substrate excellent in high reflectance, high heat dissipation, withstand voltage property, and thermal and light stability. A substrate (5) includes an aluminum base (10), a reflective layer (17) which is formed between the aluminum base (10) and an electrode pattern (20) for electrical connection with a light emitting element to contain ceramic and reflects light from the light emitting element, and an intermediate layer (16) containing resin and having high thermal conductibility which is formed to reinforce withstand voltage performance of the reflective layer (17)..
Sharp Kabushiki Kaisha

Light-emitting device

A light-emitting device includes a substrate including an upper surface; a light-emitting stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the light-emitting stack includes a first surface and a second surface opposite to the first surface toward to the upper surface; a plurality of depressions formed in the light-emitting stack and penetrating the second semiconductor layer, the active layer and a portion of the first semiconductor layer; an insulative layer covering the second surface of the light-emitting stack; a connector including a first portion and a second portion; and an electrode disposed at a side of the light-emitting stack and electrically connecting the connector, wherein the first portion of the connector is formed in the plurality of depressions, the second portion of the connector is between the insulative layer and the light-emitting stack.. .
Epistar Corporation

Light emitting element and light emitting device

A light emitting element with a hexagonal planar shape, has: an n-side semiconductor layer; a p-side semiconductor layer provided on the n-side semiconductor layer; a plurality of holes that are provided to an area excluding three corners at mutually diagonal positions of the p-side semiconductor layer in plan view, and expose the n-side semiconductor layer; a first p-electrode provided in contact with the p-side semiconductor layer; second p-electrodes provided to three corners on the first p-electrode; and an n-electrode that is provided on the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.. .
Nichia Corporation

Method for manufacturing light absorption layer of thin film solar cell and thin film solar cell using the same

A method for manufacturing a light absorption layer of a thin film solar cell includes: manufacturing a ib group element-via group element binary system nano particle; manufacturing a binary system nano particle slurry of the ib group element-via group element by adding a solution precursor including a solvent, binder and va group element to the ib group element-via group element binary system nano particle; distributing and mixing the binary system nano particle slurry of the ib group element-via group element; coating the binary system nano particle slurry of the ib group element-via group element on the rear electrode layer; and performing a heat treatment process on the coated nano particle slurry by supplying the via group element.. .
Korea Institute Of Energy Research

Solar cell and manufacturing the same

A solar cell and a method for manufacturing the solar cell are discussed. The method for manufacturing the solar cell includes applying an electrode paste on a semiconductor substrate and sintering the electrode paste using a light sintering device to form an electrode.
Lg Electronics Inc.

Solar cell metal-less reflector / back electrode structure

A photovoltaic or light detecting device is provided that includes a periodic array of dome or dome-like protrusions at the light impingement surface and a metal-less reflector/back electrode at the device back. The beneficial interaction between an appropriately designed top protrusion array and metal-less reflector/electrode back contact (r/ebc) serves (1) to refract the incoming light thereby providing photons with an advantageous larger momentum component parallel to the plane of the back (r/ebc) contact and (2) to provide optical impedance matching for the short wavelength incoming light.

Solar cell and solar cell panel including the same

Disclosed is a solar cell including a semiconductor substrate, a first conductive area formed on one surface of the semiconductor substrate, a second conductive area formed on a remaining surface of the semiconductor substrate, a first electrode connected to the first conductive area, and a second electrode connected to the second conductive area. The second electrode includes a pad portion and an electrode portion that include different conductive materials as main components.
Lg Electronics Inc.

Solar cell

Disclosed is a solar cell including a semiconductor substrate, a conductive area including first and second conductive areas disposed on one surface of the semiconductor substrate, and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area. The electrode includes an adhesive layer disposed on the semiconductor substrate or the conductive area, an electrode layer disposed on the adhesive layer and including a metal as a main component, and a barrier layer disposed on the electrode layer and including a metal that is different from the metal of the electrode layer as a main component.
Lg Electronics Inc.

Schottky barrier diode and manufacturing the same

A schottky barrier diode includes: an n+ type of silicon carbide substrate; an n-type of epitaxial layer formed on a first surface of the n+ type of silicon carbide substrate; a plurality of p+ regions formed inside the n-type of epitaxial layer; a schottky electrode formed in an upper portion of the n-type of epitaxial layer of an electrode region; and an ohmic electrode formed on a second surface of the n+ type of silicon carbide substrate, wherein the plurality of p+ regions are formed to be spaced apart from each other at a predetermined interval within the n-type of epitaxial layer.. .
Hyundai Motor Company

Semiconductor device and imaging device

A semiconductor device includes a substrate having a major surface and a thin film transistor on the substrate. The thin film transistor includes an oxynitride semiconductor layer, first and second conductive layers, a first gate electrode and a first insulating layer.
Kabushiki Kaisha Toshiba

Semiconductor device

The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode.
Semiconductor Energy Laboratory Co., Ltd.

Field-effect transistor, display element, image display device, and system

A field-effect transistor including: a gate electrode; a source electrode and a drain electrode; an active layer disposed to be adjacent to the source electrode and the drain electrode and including a n-type oxide semiconductor; and a gate insulating layer disposed between the gate electrode and the active layer, wherein the n-type oxide semiconductor undergoes substitutional doping with at least one dopant selected from divalent, trivalent, tetravalent, pentavalent, hexavalent, heptavalent, and octavalent cations, valence of the dopant is greater than valence of a metal ion constituting the n-type oxide semiconductor, provided that the dopant is excluded from the metal ion, and the source electrode and the drain electrode include a material selected from au, pt, and pd and alloys including at least any one of au, pt, and pd, in at least contact regions of the source electrode and the drain electrode with the active layer.. .
Ricoh Company, Ltd.

Pixel structure and fabricating the same

A pixel structure including an active device, a first protection layer, a first electrode, an isolator, a second protection layer and a second electrode is provided. The active device includes a gate, a source and a drain.
Au Optronics Corporation

Semiconductor device and display device including the semiconductor device

In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a gate electrode over the second insulating film; a metal oxide film in contact with a side surface of the second insulating film; and a third insulating film over the oxide semiconductor film, the gate electrode, and the metal oxide film.
Semiconductor Energy Laboratory Co., Ltd.

Semiconductor device and manufacturing the same

It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer.
Semiconductor Energy Laboratory Co., Ltd.

Semiconductor device

A highly reliable semiconductor device including an oxide semiconductor is provided by preventing a change in its electrical characteristics. A semiconductor device which includes a first oxide semiconductor layer which is in contact with a source electrode layer and a drain electrode layer and a second oxide semiconductor layer which serves as a main current path (channel) of a transistor is provided.
Semiconductor Energy Laboratory Co., Ltd.

Selective growth for high-aspect ratio metal fill

An improved conductive feature for a semiconductor device and a technique for forming the feature are provided. In an exemplary embodiment, the semiconductor device includes a substrate having a gate structure formed thereupon.
Taiwan Semiconductor Manufacturing Company, Ltd.

Semiconductor devices and methods of manufacturing the same

A semiconductor device includes a gate structure on a substrate. The gate structure includes a first gate insulation pattern, a conductive pattern for controlling a threshold voltage, a first gate electrode and a first mask sequentially stacked.
Samsung Electronics Co., Ltd.

Semiconductor device and fabrication method thereof

The present disclosure provides a method for forming a semiconductor device, including: providing a semiconductor substrate; forming a well region and a drift region in the semiconductor substrate; and forming one or more counter-doped regions in the drift region, the one or more counter-doped regions being aligned along a direction vertical to the semiconductor substrate to divide the drift region into a plurality of parts. The semiconductor fabrication method also includes: forming a gate structure on the semiconductor substrate, the gate structure covering a portion of the well region and a portion of the drift region; and forming a source electrode in the well region on one side of the gate structure and a drain electrode in the drift region on another side of the gate structure..
Semiconductor Manufacturing International (shanghai) Corporation

Turn-off power semiconductor device with improved centering and fixing of a gate ring, and manufacturing the same

The present application relates to a turn-off power semiconductor device having a wafer with an active region and a termination region surrounding the active region, a rubber ring as an edge passivation for the wafer and a gate ring placed on a ring-shaped gate contact on the termination region for contacting the gate electrodes of a thyristor cell formed in the active region of the wafer. In the turn-off power semiconductor device, the outer circumferential surface of the gate ring is in contact with the rubber ring to define the inner border of the rubber ring.
Abb Schweiz Ag

Semiconductor device

The performance of a semiconductor device is improved. An emitter electrode is coupled to a p-type body region and an n+-type emitter region of a linear active cell region via a contact groove formed on an interlayer insulating film and is coupled to a p-type body region of a linear hole connector cell region via a contact groove.
Renesas Electronics Corporation

Semiconductor device and manufacturing semiconductor device

In a top-gate transistor in which an oxide semiconductor film, a gate insulating film, a gate electrode layer, and a silicon nitride film are stacked in this order and the oxide semiconductor film includes a channel formation region, nitrogen is added to regions of part of the oxide semiconductor film and the regions become low-resistance regions by forming a silicon nitride film over and in contact with the oxide semiconductor film. A source and drain electrode layers are in contact with the low-resistance regions.
Semiconductor Energy Laboratory Co., Ltd.

Semiconductor device and manufacturing the same

A first source electrode is formed in contact with a semiconductor layer; a first drain electrode is formed in contact with the semiconductor layer; a second source electrode which extends beyond an end portion of the first source electrode to be in contact with the semiconductor layer is formed; a second drain electrode which extends beyond an end portion of the first drain electrode to be in contact with the semiconductor layer is formed; a first sidewall is formed in contact with a side surface of the second source electrode and the semiconductor layer; a second sidewall is formed in contact with a side surface of the second drain electrode and the semiconductor layer; and a gate electrode is formed to overlap the first sidewall, the second sidewall, and the semiconductor layer with a gate insulating layer provided therebetween.. .
Semiconductor Energy Laboratory Co., Ltd.

Semiconductor device manufacturing method and semiconductor device

Technique disclosed herein can suppress performance variation among semiconductor devices to be manufactured upon manufacturing each semiconductor device by forming diffusion layer by ion implantation to semiconductor substrate after etching. A semiconductor device includes a semiconductor substrate.
Toyota Jidosha Kabushiki Kaisha

Thin film transistor and manufacturing method thereof, display device

A thin film transistor, a manufacturing method thereof, and a display device are provided. The thin film transistor includes a gate electrode (21), an active layer (23), a source electrode (241) and a drain electrode (242).
Boe Technology Group Co., Ltd.

Semiconductor device comprising a gradually increasing field dielectric layer and manufacturing a semiconductor device

A semiconductor device is provided that includes a transistor in a semiconductor body having a main surface. The transistor includes a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region.
Infineon Technologies Ag

Semiconductor device

A semiconductor device of an embodiment includes a sic layer having a surface inclined with respect to a {000-1} face at an angle of 0° to 10° or a surface a normal line direction of which is inclined with respect to a <000-1> direction at an angle of 80° to 90°, a gate electrode, an insulating layer at least a part of which is provided between the surface and the gate electrode, and a region, at least apart of which is provided between the surface and the insulating layer, including a bond between carbon and carbon.. .
Kabushiki Kaisha Toshiba

Semiconductor device

According to one embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a first electrode. The third semiconductor layer is provided between the first semiconductor layer and the second semiconductor layer.
Kabushiki Kaisha Toshiba

Electrode for a metal-insulator-metal structure, capacitor of metal-insulator-metal type, and fabricating one such electrode and one such capacitor.

The electrode is used to fabricate a capacitor of metal-insulator-metal type.. .

Organic light-emitting diode display

An organic light-emitting diode display is disclosed. In one aspect, the display includes a substrate that includes a first sub-pixel region and a second sub-pixel region adjacent to the first sub-pixel region, and a first driving circuit and a second driving circuit respectively disposed in the first sub-pixel region and the second sub-pixel region.
Samsung Display Co., Ltd.

Organic light emitting diode and organic light emitting diode display including the same

An organic light emitting element according to an example embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; an emission layer between the first electrode and the second electrode; an electron transport layer between the emission layer and the second electrode; and a buffer layer between the emission layer and the electron transport layer, wherein the buffer layer includes a first material having a higher lumo level than that of the electron transport layer.. .
Samsung Display Co., Ltd.

Organic electroluminescent device and repairing method thereof

An organic electroluminescent device includes a substrate including a plurality of pixel regions each having a light emission region and an element region; a plurality of thin film transistors (tfts) including at least one switching tft and at least one driving tft in each element region; a planarization layer on the plurality of tfts; a first electrode on the planarization layer and including first to third portions connected to one another, wherein the first and second portions are at each pixel region, and the third portion is at a neighboring pixel region; an organic light emitting layer on the first electrode; and a second electrode on the organic light emitting layer, wherein an end of the third portion overlaps the driving tft of the neighboring pixel region.. .
Lg Display Co., Ltd.

Organic light emitting device

Disclosed is an organic light emitting device, (oled) comprising a substrate on which a driving transistor is formed, a bank formed on the substrate providing a boundary for a pixel region, a first electrode formed on the substrate and electrically connected with the driving transistor, the first electrode comprising a first and second cross sectional area both oriented in a direction perpendicular to a vertical direction of the substrate, the first area adjacent to the bank, the second area surrounded by the first area, an organic layer formed on the first electrode within the boundary provided by the bank, and a second electrode formed on the organic layer, wherein during operation of the oled a first electric field between the first area of the first electrode and the second electrode is greater than a second electric field between the second area of the first electrode and the second electrode.. .
Lg Display Co., Ltd.

Organic light emitting display device

An organic light emitting display device can include a substrate; a first electrode and an auxiliary electrode disposed on the substrate; a bank pattern disposed on a part of an upper surface of the first electrode and the auxiliary electrode, in which the bank pattern is divided into a first area and a second area disposed under the first area; a barrier rib disposed on a part of the upper surface of the auxiliary electrode, in which the barrier rib is divided into a third area having a reverse-tapered shape and a fourth area disposed under the third area and having a tapered shape; an organic emission layer disposed on the substrate; and a second electrode disposed on the organic emission layer.. .
Lg Display Co., Ltd.

Memory device

A memory device, containing a first electrode, a second electrode and an oxide layer arranged between the first electrode and the second electrode, is produced. The oxide layer has a first zone and a second zone, with the first zone surrounding or being located on either side of the second zone, with the minimum distance d2 separating the two electrodes on the second zone of the oxide layer being less than the minimum distance d1 separating the two electrodes on the first zone of the oxide layer..
Commissariat A L'energie Atomique Et Aux Energies Alternatives

Resistive switching random access memory with asymmetric source and drain

A resistive random access memory (rram) structure includes a resistive memory element formed on a semiconductor substrate and designed for data storage. The resistive element includes a resistive material layer.
Taiwan Semiconductor Manufacturing Company., Ltd.

Image sensor and manufacturing method therefor

Disclosed is an improvement of strength of adhesion between a photoconductive layer and a substrate. The image sensor includes a first electrode and a protruding pattern formed around the first electrode on the substrate, a protective film having an protruded surface formed on the protruding pattern, the photoconductive layer formed on the protective film, and a second electrode formed on the photoconductive layer..
Vatech Ewoo Holdings Co., Ltd.

Method of manufacturing solid-state image sensor

A method of manufacturing a solid-state image sensor, including a first transistor for transferring charges from a charge accumulation region to a first charge holding region and a second transistor for transferring charges from the first charge holding region to a second charge holding region, the method comprising forming, on the semiconductor substrate, a resist pattern having a opening on the first charge holding region, and injecting a impurity via the opening so as to make the first charge holding region be a buried type, wherein the impurity is injected such that an impurity region, which makes the first charge holding region be a buried type, is formed at a position away from an end of the gate electrode of the second transistor.. .
Canon Kabushiki Kaisha

Solid-state imaging device, manufacturing same, and electronic device

The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic device capable of increasing utilization efficiency of a substrate. The solid-state imaging device includes a first semiconductor substrate provided with a sensor circuit having a photoelectric conversion part, and a second semiconductor substrate and a third semiconductor substrate provided with respective circuits different from the sensor circuit.
Sony Corporation

Light receiving device

A light receiving device includes: a photoelectric converter including a photodiode and a first pixel electrode disposed on a lower surface of the photodiode; a scanning circuit connected to the first pixel electrode; an electrode pad disposed on a periphery of the scanning circuit; a transparent conductive film extending from an upper surface of the photodiode to the electrode pad, the transparent conductive film having an inclination relative to the upper surface of the photodiode, between the photodiode and the electrode pad; and a sealing resin filled in a space between the photoelectric converter and the scanning circuit, and in a space under the transparent conductive film around the photoelectric converter.. .
Panasonic Intellectual Property Management Co., Ltd.

Method of manufacturing pixel structure and pixel structure

A method of manufacturing a pixel structure includes: forming a source, a drain and a first capacitor electrode; forming a semiconductor layer in contact with a portion of the source and a portion of the drain; forming a gate and a second capacitor electrode, and the second capacitor electrode substantially aligned with the first capacitor electrode; forming a gate insulating layer between the semiconductor layer, the source, the drain and the first capacitor electrode, and the gate and the second capacitor electrode; forming a passivation layer over the source, the drain, the first capacitor electrode, the semiconductor layer, the gate and the second capacitor electrode; and forming a pixel electrode over the passivation layer, and the pixel electrode substantially aligned with the first capacitor electrode.. .
E Ink Holdings Inc.

Array substrate, manufacturing method thereof and display device

An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises a gate electrode layer, an active layer and a source-drain electrode layer that are disposed on a substrate.
Boe Technology Group Co., Ltd.

Semiconductor device

A semiconductor device includes a first transistor which includes a first gate electrode below its oxide semiconductor layer and a second gate electrode above its oxide semiconductor layer, and a second transistor which includes a first gate electrode above its oxide semiconductor layer and a second gate electrode below its oxide semiconductor layer and is provided so as to at least partly overlap with the first transistor. In the semiconductor device, a conductive film serving as the second gate electrode of the first transistor and the second gate electrode of the second transistor is shared between the first transistor and the second transistor.
Semiconductor Energy Laboratory Co., Ltd.

Control circuit of thin film transistor

A control circuit of a thin film transistor, comprising: a substrate; a silicon nitride layer disposed on the substrate; a silicon dioxide layer disposed on the silicon nitride layer; a light shielding layer disposed inside the silicon nitride layer, which comprising a first light shielding region and a second light shielding region; at least one n type metal oxide semiconductor disposed on the silicon dioxide layer at a position corresponding to the first light shielding region; at least one p type metal oxide semiconductor disposed on the silicon dioxide layer at a position corresponding to the second light shielding region; each of the n type metal oxide semiconductor and the p type metal oxide semiconductor has a gate electrode layer, a first control signal received by voltage pulses of the gate electrode layer synchronized with a second control signal received by the light shielding layer in voltage variation.. .
Wuhan China Star Optoelectronics Technology Co., Ltd.

Display device

To provide a display device including a flexible panel that can be handled without seriously damaging a driver circuit or a connecting portion between circuits. The display device includes a bent portion obtained by bending an element substrate.
Semiconductor Energy Laboratory Co., Ltd.

Semiconductor device and display device

According to one embodiment, a semiconductor device includes first and second gate electrodes, a semiconductor layer, an output electrode, and an insulating layer. The semiconductor layer includes first source and drain areas, a first channel area facing the first gate electrode, second source and drain areas, and a second channel area facing the second gate electrode.
Japan Display Inc.

Vertical neuromorphic devices stacked structure and array of the structure

Provided is a vertical neuromorphic devices stacked strticture comprising a main gate which is formed on a substrate and has a vertical pillar shape, a main gate insulating layer stack formed on outer side surface of the main gate; a semiconductor region formed on outer side surface of the main gate insulating layer stack, a plurality of electrode layers formed on the side surface of the semiconductor retnon, a plurality of control gates formed on the side surface of the semiconductor region; and a plurality of control gate insulating layer stacks which are surrounding surfaces of the control gates and are formed between the control gate and the semiconductor region, and between the control gate and the electrode layer, and wherein the electrode layers and the control gates surrounded by the control gate insulating layer stack are stacked sequentially and alternately on the side surface of the semiconductor region.. .
Snu R&db Foundation

Vertical non-volatile semiconductor devices

Semiconductor device are provided including a stacked structure having gate electrodes and interlayer insulating layers alternately stacked on a substrate; channel holes extending perpendicular to the substrate through the stacked structure and including channel regions therein; and horizontal parts at lower portions of the stacked structure and including areas in which the channel regions are horizontally elongated from the channel holes. The horizontal parts surround respective channel holes and are connected to each other between at a least portion of the channel holes..

Memory cell and an array of memory cells

A memory cell includes a first electrode and a second electrode. A select device and a programmable device are in series with each other between the first and second electrodes.
Micron Technology, Inc.

Semiconductor device having embedded strain-inducing pattern and forming the same

In a semiconductor device, a first active region has a first Σ-shape, and the second active region has a second Σ-shape. When a line that is perpendicular to the substrate and passes a side surface of a first gate electrode in the first region is defined as a first vertical line, when a line that is perpendicular to the substrate and passes a side surface of a second gate electrode in the second region is defined as a second vertical line, when a shortest distance between the first vertical line and the first trench is defined as a first horizontal distance, and when a shortest distance between the second vertical line and the second trench is defined as a second horizontal distance, a difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm..
Samsung Electronics Co., Ltd.

Semiconductor device, circuit board, and electronic device

A novel semiconductor device or memory device is provided. Alternatively, a semiconductor device or memory device in which storage capacity per unit area is large is provided.
Semiconductor Energy Laboratory Co., Ltd.

Memory device and semiconductor device

It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device.
Semiconductor Energy Laboratory Co., Ltd.

Method for manufacturing semiconductor device and semiconductor device

A semiconductor device includes a first and second fin-shaped semiconductor layers on a substrate. A first insulating film is around the first and second fin-shaped layers.
Unisantis Electronics Singapore Pte. Ltd.

Semiconductor device and manufacturing the same

A semiconductor device includes a substrate including at least one metal-oxide-semiconductor field-effect transistor (mosfet) region defined by a device isolation layer and having an active pattern extending in a first direction on the mosfet region, a gate electrode intersecting the active pattern on the substrate and extending in a second direction intersecting the first direction, and a first gate separation pattern adjacent to the mosfet region when viewed from a plan view and dividing the gate electrode into segments spaced apart from each other in the second direction. The first gate separation pattern has a tensile strain when the mosfet region is a p-channel.
Samsung Electronics Co., Ltd.

Semiconductor device

A semiconductor device includes a plurality of active regions including channel regions extending in a first direction on a semiconductor substrate and source/drain regions connected to the channel regions, a plurality of gate electrodes extending in a second direction different from the first direction to intersect the channel regions, a plurality of conductive lines electrically connected to at least one of the source/drain regions and the plurality of gate electrodes through a plurality of vias, and a power line disposed between the semiconductor substrate and the plurality of conductive lines and configured to supply a power supply voltage.. .
Samsung Electronics Co., Ltd.

Semiconductor device and manufacturing method thereof

A semiconductor device includes an interlayer insulating film in which first contact holes and second contact holes are provided. Each of the second contact holes has a width narrower than a width of the corresponding first contact hole.
Toyota Jidosha Kabushiki Kaisha

Gan-based schottky diode rectifier

The present disclosure involves a gan-based schottky diode rectifier and a method of manufacturing the same. The gan-based schottky diode rectifier includes: a substrate, on which a gan intrinsic layer and a barrier layer are grown in turn; a p-type two-dimension electron gas depletion layer located on an upper surface of the barrier layer; a cathode electrode located at a position on the upper surface of the barrier layer where is different from the position where the p-type two-dimension electron gas depletion layer is formed; and an anode electrode including a first part and a second part electrically connected to each other..
Institute Of Semiconductors, Chinese Academy Of Scinces

Electrostatic discharge protection device and manufacturing the same

An esd protection device includes an insulative substrate, first and second discharge electrodes contacting the insulative substrate, the first and second discharge electrodes being spaced apart from and opposed to each other, first and second outer electrodes provided on an outside surface of the insulative substrate and electrically connected to the first and second discharge electrodes, respectively; and a discharge auxiliary electrode extending from the first discharge electrode to the second discharge electrode in a region where the first and second discharge electrodes oppose each other. The discharge auxiliary electrode includes semiconductor particles and metal particles having an average particle diameter of about 0.3 μm to about 1.5 μm, and a density of the metal particles at a random cross-section of the discharge auxiliary electrode is greater than or equal to about 20 particles/50 μm2..
Murata Manufacturing Co., Ltd.

Light-emitting device and lighting device provided with the same

A light-emitting device capable of ensuring an electric connection between a light-emitting element and an electrode without generating any problem in practical use, by both connecting methods with a solder and a connector, and a lighting device provided with the light-emitting device are provided. The light-emitting device according to the present invention has a plurality of led chips, and a soldering electrode land and a connector connecting electrode land electrically connected to the chips, on a ceramic substrate.
Sharp Kabushiki Kaisha

Semiconductor device and a manufacturing the same

To provide a technique capable of positioning of a semiconductor chip and a mounting substrate with high precision by improving visibility of an alignment mark. In a semiconductor chip constituting an lcd driver, a mark is formed in an alignment mark formation region over a semiconductor substrate.
Renesas Electronics Corporation

Semiconductor device

Object is to provide a semiconductor device with fewer malfunctions. The semiconductor device has a semiconductor chip having a first-signal-output circuit operating at a first-power-supply voltage, a second-signal-output circuit operating at a second power supply voltage, and a plurality of bump electrodes; and a wiring board including a first main surface facing the main surface of the semiconductor chip, a second main surface opposite to the first main surface with a wiring layer therebetween, first external terminals on the first main surface, and second ones on the second main surface; the former being mounted on the latter to couple the bump electrodes to the first external terminals.
Renesas Electronics Corporation

Semiconductor device and fabricating the same

A semiconductor device is provided. The semiconductor device includes a stack structure comprising insulating patterns and electrode structures alternately stacked on a substrate, and a vertical channel structure vertically penetrating the stack structure.

Connections for memory electrode lines

Subject matter disclosed herein may relate to word line electrodes and/or digit line electrodes in a cross-point array memory device. One or more word line electrodes may be configured to form a socket area to provide connection points to drivers and/or other circuitry that may be located within a footprint of an array of memory cells..
Micron Technology, Inc.

Semiconductor device and manufacturing the same

A semiconductor device includes a wiring substrate including wiring layers, a semiconductor chip including electrode pads and mounted on the wiring substrate, and a first capacitor including a first electrode and a second electrode, and mounted on the wiring substrate. The wiring layers include a first wiring layer including a first terminal pad electrically connected with the first electrode of the first capacitor and a second terminal pad electrically connected with the second electrode of the first capacitor; and a second wiring layer on an inner side by one layer from the first wiring layer of the wiring substrate and including a first conductor pattern having a larger area than each of the first terminal pad and the second terminal pad.
Renesas Electronics Corporation

Semiconductor device

To improve the reliability of a semiconductor device. A chip mounting portion tab5 is arranged to be shifted to the +x direction side.
Renesas Electronics Corporation

Semiconductor device

A semiconductor device includes: a semiconductor element which includes semiconductor substrate, an insulating film formed on a front surface of the semiconductor substrate and having an opening, and an electrode formed in the opening on the front surface of the semiconductor substrate; and a first protective film disposed to cover the semiconductor element. The insulating film has a thickness of not less than 1/500 of a thickness of the semiconductor substrate and not more than 4 μm.
Mitsubishi Electric Corporation

Integrated circuit devices and methods of manufacturing the same

An integrated circuit device may include a gate insulation layer covering a top surface and opposite sidewalls of a fin-shaped active region, a gate electrode covering the gate insulation layer and a hydrogen atomic layer disposed along an interface between the fin-shaped active region and the gate insulation layer. A method of manufacturing the integrated circuit device may include forming an insulating layer covering a lower portion of a preliminary fin-shaped active region, forming a fin-shaped active region having an outer surface with an increased smoothness through annealing an upper portion of the preliminary fin-shaped active region in a hydrogen atmosphere and forming a hydrogen atomic layer covering the outer surface of the fin-shaped active region.
Samsung Electronics Co., Ltd.

Method and plasma dicing a semi-conductor wafer

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma..
Plasma-therm Llc



Electrode topics:
  • Phosphoric Acid
  • Internal Combustion Engine
  • Carbon Atoms
  • Porous Carbon
  • Double Layer Capacitor
  • Graphene Oxide
  • Aqueous Solution
  • Lithium Ion
  • Exhaust Gas
  • Soot Sensor
  • Combustion
  • Calibration
  • Electronic Apparatus
  • Electrical Signal
  • Electric Conversion


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