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Electrode patents



      
           
This page is updated frequently with new Electrode-related patent applications. Subscribe to the Electrode RSS feed to automatically get the update: related Electrode RSS feeds. RSS updates for this page: Electrode RSS RSS


Method for manufacturing touch panel

Hon Hai Precision Industry

Method for manufacturing touch panel

Semiconductor package module

Samsung Electro-mechanics

Semiconductor package module

Semiconductor package module

Snu R&db Foundation

Circuit board including aligned nanostructures

Date/App# patent app List of recent Electrode-related patents
06/25/15
20150181716
 Method for manufacturing touch panel patent thumbnailMethod for manufacturing touch panel
A method for manufacturing a touch panel includes the following procedures. A base plate is provided.
Hon Hai Precision Industry Co., Ltd.
06/25/15
20150181715
 Method for manufacturing touch panel patent thumbnailMethod for manufacturing touch panel
A method for manufacturing a touch panel includes the following procedures. A first conductive layer and a shielding layer surrounding the first conductive layer are formed on a base plate.
Hon Hai Precision Industry Co., Ltd.
06/25/15
20150181708
 Semiconductor package module patent thumbnailSemiconductor package module
There is provided a semiconductor package module including: a substrate having one or more connection terminals formed thereon; first electronic components mounted on a first surface of the substrate; second electronic components mounted on a second surface of the substrate; and third electronic components formed on the substrate and including connection electrodes connecting the one or more connection terminals and external terminals to each other.. .
Samsung Electro-mechanics Co., Ltd.
06/25/15
20150181704
 Circuit board including aligned nanostructures patent thumbnailCircuit board including aligned nanostructures
Circuit boards having a polymer substrate, a first electrode and a second electrode disposed on a surface of the polymer substrate, and at least one nanostructure electrically connected to the first and second electrodes are generally disclosed.. .
Snu R&db Foundation
06/25/15
20150181688
 Neutron generator patent thumbnailNeutron generator
A neutron generator includes a sealed envelope providing a low pressure environment for a gas of hydrogen isotope(s). One end of the envelope defines an ion source chamber.
Schlumberger Technology Corporation
06/25/15
20150181683
 Electrostatic chuck including declamping electrode and  declamping patent thumbnailElectrostatic chuck including declamping electrode and declamping
A semiconductor wafer processing apparatus for processing semiconductor wafers comprises a semiconductor wafer processing chamber in which a semiconductor wafer is processed, a process gas source in fluid communication with the processing chamber adapted to supply process gas into the processing chamber, a vacuum source adapted to exhaust process gas and byproducts of the processing from the processing chamber, and an electrostatic chuck assembly. The electrostatic chuck assembly comprises a support surface in a layer of ceramic material on which the semiconductor wafer is supported during processing of the wafer in the chamber, at least one electrostatic clamping electrode embedded in the layer of ceramic material, the at least one electrostatic clamping electrode operable to apply an electrostatic clamping force to the wafer on the support surface when an electrostatic clamping voltage is applied to the clamping electrode, and at least one declamping electrode embedded in the layer of ceramic material above the at least one electrostatic clamping electrode operable to provide a path for draining any residual charge between the wafer and the support surface when the electrostatic clamping voltage is no longer applied to the clamping electrode..
Lam Research Corporation
06/25/15
20150181650
 Graphene microheater and  manufacturing the same patent thumbnailGraphene microheater and manufacturing the same
A microheater and a method of manufacturing the same are disclosed. The microheater includes a substrate, graphene disposed on the substrate and formed in a pattern; and a passivation layer disposed on the graphene.
Research & Business Foundation Sungkyunkwan University
06/25/15
20150181354
 Speech processor headpiece patent thumbnailSpeech processor headpiece
A cochlear implant system includes: an electrode array implanted within a cochlea; an internal processor in communication with the electrode array; an implanted antenna which is electrically coupled to the internal processor; and a modular external headpiece which is removably positioned over the implanted antenna, the modular external headpiece including a core containing a sound processor for processing sound and providing a corresponding signal to the implanted antenna; and a modular component configured to releasably engage the core and supply electrical power to the core. A modular speech processor headpiece includes a core comprising a microphone and sound processor for producing a signal representing ambient sound to be transmitted to a cochlear implant, the core further comprising a number of electrical contacts; and a modular component containing a number of electrical contacts corresponding to the electrical contacts of the core; wherein the core is configured to engage with the modular component such that electrical communication is made between the core and the modular component..
Advanced Bionics Ag
06/25/15
20150181350
 Flexible, shapeable free-form electrostatic speakers patent thumbnailFlexible, shapeable free-form electrostatic speakers
An embodiment provides a free-form electrostatic speaker, including: a three dimensional object body; at least a portion of the three dimensional object body having a free-form electrode layer disposed thereon; the free-form electrode layer being shaped to substantially match the at least a portion of the three dimensional object body; a free-form diaphragm positioned proximate to, and being shaped to substantially match, the free-form electrode layer; and an input element coupled to the free-form electrode layer that accepts input from an external source. Other embodiments are described and claimed..
Disney Enterprises, Inc.
06/25/15
20150181347
 Spatial free-form interactive speakers patent thumbnailSpatial free-form interactive speakers
An embodiment provides a free-form speaker. In an embodiment, an array type electrostatic speaker is provided.
Disney Enterprises, Inc.
06/25/15
20150181324

Bluetooth communication bracelet


A bluetooth communication bracelet includes a main body and a bluetooth earphone. The main body includes a wearing member, a charging plate, an usb interface, and an audio jack.
1more Inc.
06/25/15
20150181320

Volume reduction filling member for microphone and unidirectional condenser microphone incorporating the same


A microphone includes a volume reduction filling member therein. The volume reduction filling member includes an elastic body having an insertion hole for inserting an electrode extraction member which extracts a generated current to a back end side by contacting a front end side thereof to a fixed electrode of a microphone unit, and reducing a volume inside a unit case.
Kabushiki Kaisha Audio-technica
06/25/15
20150180545

Data transmission structure


A data transmission structure comprises a system and a visual interface display apparatus. The system includes a host, a receiving unit and at least a transmission module.
06/25/15
20150180462

Device for controlling at least one transistor


A device for controlling at least one transistor is disclosed. The device includes the transistor, which includes a control electrode and two other electrodes, a main control circuit connected to the control electrode of the transistor and configured to control the state of the transistor in a main operating mode, and an auxiliary control circuit configured to inject, in an auxiliary operating mode.
Valeo Systems De Controle Moteur
06/25/15
20150180451

Surface acoustic wave device and filter


A surface acoustic wave device includes: a pair of comb-type electrodes that are provided on a piezoelectric substrate and include electrode fingers and dummy electrode fingers, the electrode fingers of one of the pair of comb-type electrodes facing the dummy electrode fingers of the other comb-type electrode; and additional films that are provided to cover gaps between tip ends of the electrode fingers and tip ends of the dummy electrode fingers and to overlap with at least one of first through third groups in which the first and second groups respectively include the electrode fingers and the dummy electrode fingers located at opposite sides of the gaps in a first direction in which the electrode fingers extend, and the third group includes the electrode fingers located at sides of the gaps in a second direction that crosses the first direction.. .
Taiyo Yuden Co., Ltd.
06/25/15
20150180449

Vibrating device and manufacturing method therfor


A vibrating device having vibrating arms connected to a supporter. The vibrating arms have an n-type si layer which is a degenerated semiconductor and an exciter provided on the n-type si layer.
Murata Manufacturing Co., Ltd.
06/25/15
20150180419

High-frequency amplifier


There is provided a high-frequency amplifier including a divider, a plurality of amplifiers for amplifying a high-frequency signal distributed by the divider and outputting the amplified high-frequency signal, a combiner for combining amplified high-frequency signals, a base substrate, a conductor pattern that is connected to a ground end of each of the amplifiers, and a ground electrode. Each of the conductor patterns has a first conductive portion.
Tdk Corporation
06/25/15
20150180370

Micro-electro-mechanical transducer having an optimized non-flat surface


A capacitive micromachined ultrasound transducer (cmut) is provided. The cmut has a first layer having a first electrode and a second layer having a second electrode opposing the first electrode to define a gap width therebetween.
Kolo Technologies, Inc.
06/25/15
20150180346

Dc power supply device, and control dc power supply device


A phase of the pulse control signal upon restarting is synchronized with the phase of the pulse control signal upon suspending, thereby suppressing fluctuations of output voltage in each phase of the inverter upon restarting and further suppressing fluctuations of voltage supplied to the load. Upon supplying dc power to a plasma generator, when arc discharge occurs in the plasma generator, supplying of the dc power is suspended to reduce damage on the electrodes and substrate, and further upon extinguishing of the arc discharge, supplying of the dc power is restarted.
Kyosan Electric Mfg. Co., Ltd.
06/25/15
20150180214

Vertical cavity surface emitting laser and atomic oscillator


A vertical cavity surface emitting laser includes: a substrate; a first mirror layer; an active layer; a second mirror layer; a first electrode which is electrically connected to the first mirror layer; a second electrode which is electrically connected to the second mirror layer; and a pad which is electrically connected to the second electrode, in which the first mirror layer, the active layer, and the second mirror layer configure a laminated body, the laminated body includes a resonance portion, an insulation layer is provided on a side surface of the laminated body, in a plan view, the insulation layer has a shape line-symmetrical with respect to a virtual straight line passing through a center of the resonance portion, the pad is provided over the insulation layer, and in the plan view, the pad is only provided on one side of the virtual straight line.. .
Seiko Epson Corporation
06/25/15
20150180213

Vertical cavity surface emitting laser and atomic oscillator


A vertical cavity surface emitting laser includes: a laminated body; an insulation layer which is provided over at least a portion of the laminated body; an electrode of which at least a portion is provided over the laminated body; a pad; and a wiring which connects the electrode and the pad, wherein the laminated body includes a first mirror layer, an active layer, and a second mirror layer, the laminated body includes a first distortion imparting portion, a second distortion imparting portion, and a resonance portion which is provided between the first distortion imparting portion and the second distortion imparting portion, in a plan view, the electrode is provided so as to cover at least a portion of the resonance portion, in the plan view, a width of the wiring is greater than a width of the first distortion imparting portion and is smaller than a width of the electrode.. .
Seiko Epson Corporation
06/25/15
20150180209

Vertical cavity surface emitting laser and atomic oscillator


A vertical cavity surface emitting laser includes: a substrate; a first mirror layer which is provided over the substrate; an active layer which is provided over the first mirror layer; a second mirror layer which is provided over the active layer; a first electrode and a second electrode which are electrically connected to the first mirror layer and are separated from each other; and a third electrode which is electrically connected to the second mirror layer, wherein the first mirror layer, the active layer, and the second mirror layer configure a laminated body, the laminated body includes a resonance portion which resonates light generated in the active layer, in a plan view, an insulation layer surrounding the laminated body is provided, and in the plan view, the insulation layer is provided between the first electrode and the second electrode.. .
Seiko Epson Corporation
06/25/15
20150180204

Vertical cavity surface emitting laser and atomic oscillator


A vertical cavity surface emitting laser includes: a substrate; a laminated body which is provided over the substrate; an electrode of which at least a portion is provided over the laminated body; and a pad which is connected to the electrode, wherein the laminated body includes a first mirror layer provided over the substrate, an active layer provided over the first mirror layer, and a second mirror layer provided over the active layer, in a plan view, the laminated body includes a first distortion imparting portion, a second distortion imparting portion, and a resonance portion which is provided between the first distortion imparting portion and the second distortion imparting portion and resonates light generated in the active layer, and in the plan view, the pad is provided in a position that is not overlapped with at least one of the first distortion imparting portion and the second distortion imparting portion.. .
Seiko Epson Corporation
06/25/15
20150180199

Light-emitting element module, quantum interference apparatus, atomic oscillator, electronic apparatus and moving object


A light-emitting element module includes a temperature adjustment element, a light-emitting element arranged on a temperature adjustment surface of the temperature adjustment element, a metal layer arranged on the temperature adjustment surface, a relay member arranged on the temperature adjustment surface through the metal layer, a wiring layer arranged on a surface of the relay member at an opposite side to the temperature adjustment surface, a wiring to electrically connect the light-emitting element and the wiring layer, and a wiring to electrically connect a connection electrode and the wiring layer. The wiring layer has an area smaller than an area of a region where the metal layer overlaps the relay member in a plan view..
Seiko Epson Corporation
06/25/15
20150180192

Laser apparatus and controlling laser apparatus


A laser apparatus may comprise: a laser chamber configured to include a laser gain medium; a pair of electrodes disposed in the laser chamber; an energy detector configured to measure pulse energy of laser beams outputted by discharging between the pair of the electrodes; an optical element disposed on a light path of the laser beams; and a controller configured to calculate an integration value of absorption energy at the optical element, and determine whether the integration value exceeds a lifetime integration value of the optical element based on the pulse energy of the laser beams.. .
Gigaphoton Inc.
06/25/15
20150180101

Storage cell system


An alkaline storage battery comprises a nickel positive electrode having nickel hydroxide as the main positive electrode active material, a hydrogen absorbing alloy negative electrode having a hydrogen absorbing alloy as the negative electrode active material, a separator, an alkaline electrolyte, and an outer can storing the nickel positive electrode, the hydrogen absorbing alloy negative electrode, the separator, and the alkaline electrolyte, and the hydrogen absorbing alloy is expressed by general formula laxreymg1-x-ynin-ama (re is at least one element selected from rare earth elements including y, re is not la, m is at least one element selected from elements other than co and mn), and the alkaline electrolyte contains at least one type of compound selected from a tungsten compound, a molybdenum compound, and a niobium compound, and in a system, the alkaline storage battery and a lead battery are connected in parallel.. .
Sanyo Electric Co., Ltd.
06/25/15
20150180093

Battery pack


A battery pack is disclosed. One aspect includes a battery pack module having a housing and a plurality of battery packs, each pack housing a case in which a plurality of batteries are received, an electrode tab to connect the batteries to form one unit, and a data wire having a first end connected to the electrode tab, to act as a signal transmitting line of the plurality of batteries..
Samsung Sdl Co., Ltd.
06/25/15
20150180092

Method and device for adjusting battery module


A method for adjusting a battery module including a plurality of connected cells is provided. Each cell is a nickel-metal hydride battery including a positive electrode containing an active material of which the main component is nickel hydroxide, a negative electrode containing a hydrogen adsorption alloy, and an electrolytic solution that is an alkali solution.
Primearth Ev Energy Co., Ltd.
06/25/15
20150180089

High-voltage battery for vehicle


A high-voltage battery for a vehicle is provided. The high-voltage battery includes an electrode assembly that includes a cathode plate, an anode plate, and a separator disposed between the cathode plate and the anode plate.
Hyundai Motor Company
06/25/15
20150180088

Electrochemical lead battery including a specific additive


The present invention relates to an electrochemical lead battery comprising at least one electrochemical cell comprising a positive electrode comprising lead oxide pbo2 and a negative electrode comprising lead metal separated by an electrolyte comprising methanesulfonic acid and at least one lead salt, characterized in that said electrolyte further comprises fluoride ions.. .
Institute Polytechnique De Grenoble
06/25/15
20150180086

Battery half cell, a battery and their manufacture


There is provided a battery and battery half cell comprising at least one carbon fiber as negative electrode, said carbon fiber comprising a plurality of layers with carbon atoms having graphite structure, said plurality of layers having an ability of intercalating metal ions, said carbon fiber at least partially coated with at least one electrically insulating polymer layer acting as an electrolyte, wherein said insulating polymer layer has been applied with an electro-driven polymerization reaction, wherein said insulating polymer layer is permeable for metal ions, said insulating polymer layer having a stiffness of at least 0.5 mpa, said insulating polymer layer having an ionic conductivity of at least 10−10 s/m and an electrical resistivity of at least 1010Ω m, said insulating layer has a thickness in the interval 10-200 nm. Advantages include possibility to utilize thin layers of electrolytes without creating large ohmic losses, structural batteries can comprise carbon fibers..
Swerea Sicomp Ab
06/25/15
20150180083

Cylindrical battery


A cylindrical battery comprises a spiral electrode assembly having a positive electrode plate being provided with a porous nickel sintered substrate using a nickel coated steel plate as a conductive core substrate, and containing a positive electrode active material mainly including a nickel hydroxide, a negative electrode plate, and a separator, and the positive electrode plate and the negative electrode plate are wound into a spiral form interposing the separator therebetween, and the positive electrode plate has a positive core substrate tab portion in which the conductive core substrate is exposed without the porous nickel sintered substrate at one end portion in the height direction, and in in a finally wound end portion of the spiral electrode assembly, a corner tip portion of the positive core substrate tab portion is bent in a direction toward an axis of the spiral electrode assembly.. .
Santo Electric Co., Ltd.
06/25/15
20150180082

Electrode assembly and manufacturing method thereof


An electrode assembly includes at least one first unit cell obtained by stacking a first electrode, a separator, a second electrode, a separator and a first electrode one by one, and at least one second unit cell obtained by stacking a second electrode, a separator, a first electrode, a separator and a second electrode one by one. The first unit cell and the second unit cell are alternately and repeatedly disposed between a separator sheet folded in zigzags..
Lg Chem, Ltd.
06/25/15
20150180081

Traction battery


The disclosure relates to a battery, in particular a traction battery, comprising a battery casing providing connecting poles on the upper side thereof and having arranged therein alternating negative and positive electrodes connected to the connecting poles, the positive electrodes being configured as tubular plates and each including a current-collecting strip and a plurality of cores extending parallel to each other from the current-collecting strip, the cores being oriented in such a manner as to run transversely and preferably orthogonally to the height direction of the battery casing.. .
Hoppecke Batterien Gmbh & Co. Kg
06/25/15
20150180076

Manufacturing all-solid battery


A manufacturing method of an all-solid battery includes fabricating a single battery including a positive electrode layer, a negative electrode layer, and a solid electrolyte layer arranged between the positive electrode layer and the negative electrode layer; fabricating a plurality of battery packs including the plurality of single batteries; confining a plurality of battery packs by an equal confining pressure; measuring the electrical characteristics of the plurality of confined battery packs; determining the battery pack whose measured electrical characteristics are the worst of the plurality of battery packs; reducing the confining pressures of the other battery packs so that the electrical characteristics of the other battery packs are equal to that of the battery pack whose electrical characteristics have been determined to be the worst; and electrically connecting in parallel the battery packs.. .
Toyota Jidosha Kabushiki Kaisha
06/25/15
20150180074

Manifold for redox flow battery for reducing shunt current and redox flow battery comprising same


A manifold for a redox flow battery capable of effectively suppressing a shunt current has a supply flow pathway and an exhaust flow pathway respectively formed at a left side and a right side of an anode or cathode electrode electrolyte reaction unit so as to include a u-shaped curved portion, and the u-shaped curved portion is formed to be positioned on the upper part of the top or the lower part of the bottom of the first electrode electrolyte reaction unit. When the manifold is applied to a redox flow battery, the supply flow pathway and the exhaust flow pathway having the u-shaped curved portion are formed on the upper part of the top or the lower part of the bottom of the electrode electrolyte reaction unit to prevent an electrolyte existing in the inside of a stack and a pipe from passing through the u-shaped curved portion..
Korea Institute Of Energy Research
06/25/15
20150180072

Manufacture membrane electrode assembly for fuel cell


A manufacturing system and method of an membrane electrode assembly (mea) for a fuel cell is provided which increases performance and durability of an mea and ensures productivity of the mea therein. In particular, electrodes and an electrolyte membrane are bonded together and the membrane electrode assembly manufactured in the bonding process is pressed at a predetermined temperature..
Hyundai Motor Company
06/25/15
20150180070

Fuel cell system


A fuel cell system according to the present invention comprises: a fuel cell including a membrane-electrode assembly in which electrodes, each having a catalyst layer, are arranged on both surfaces of a polymer electrolyte membrane; and a control apparatus which controls an output voltage of the fuel cell. If a target voltage of the fuel cell is set so as to be equal to or higher than a catalyst dissolution voltage at which a catalyst in the catalyst layer is dissolved and the amount of an oxide film formed on the catalyst layer is estimated to be less than a first predetermined amount, the control apparatus controls the output voltage of the fuel cell so as to be equal to an oxide film formation voltage, being lower than the catalyst dissolution voltage, until the amount of the oxide film is estimated to be equal to or greater than the first predetermined amount and then controls the output voltage so as to be equal to the target voltage..
Toyota Jidosha Kabushiki Kaisha
06/25/15
20150180067

Method for controlling startup of fuel cell system


A method for controlling a startup of a fuel cell system is provided. The method includes comparing a voltage generated in a fuel cell stack when hydrogen is supplied to a fuel electrode of the fuel cell stack for a set period of time with a first reference voltage.
Kia Motors Corporation
06/25/15
20150180054

Fuel cell


A fuel cell that includes a membrane electrode assembly having an electrolyte, an anode catalyst, and a cathode catalyst; and a plurality of frame-gaskets is provided. Each of the frame-gaskets may be disposed between an anode-side separator and the membrane electrode assembly or between a cathode-side separator and the membrane electrode assembly.
Hyundai Motor Company
06/25/15
20150180049

Systems and methods for generating electric power from salts and minerals in bodies of water


An electricity generating system includes a first electrode located at a first location in a body of salt water and a second electrode located at a second location in the body of salt water. The first and second electrodes may be of the same or different materials and are designed to present a large surface area to the body of water.
06/25/15
20150180047

Electrode for fuel cell and production electrode for fuel cell, membrane electrode assembly and fuel cell


This electrode for fuel cell comprises: carbon nanotubes; a catalyst for fuel cell supported on the carbon nanotubes; and an ionomer provided to coat the carbon nanotubes and the catalyst for fuel cell, wherein when a length of the carbon nanotubes is represented by la [μm] and an inter-core pitch of the carbon nanotubes is represented by pa [nm], the length la and the inter-core pitch pa satisfy two expressions given below: 30≦la≦240; and 0.351×la+75≦pa≦250.. .
Toyota Jidosha Kabushiki Kaisha
06/25/15
20150180045

Non-platinum group metal electrocatalysts using metal organic framework materials and preparation


A method of preparing a nitrogen containing electrode catalyst by converting a high surface area metal-organic framework (mof) material free of platinum group metals that includes a transition metal, an organic ligand, and an organic solvent via a high temperature thermal treatment to form catalytic active sites in the mof. At least a portion of the contained organic solvent may be replaced with a nitrogen containing organic solvent or an organometallic compound or a transition metal salt to enhance catalytic performance.
Uchicago Argonne, Llc
06/25/15
20150180044

Method for manufacturing an electrode/proton-exchange membrane assembly


A method for manufacturing a membrane/electrode assembly, including depositing an electrocatalyst ink on one face of a support so as to form an electrode on the support and fixedly attaching the support and the electrode formed on a proton-exchange membrane by adhesion. The method also includes withdrawing a part of the support so as to uncover at least one median part of the formed electrode..
Commissariat à I'énergie Atomique Et Aux énergies Alternatives
06/25/15
20150180043

Method of manufacturing fuel cell anode


Disclosed is a method of manufacturing an anode for a fuel cell. The method includes: synthesizing a fuel cell catalyst used to oxidize a fuel for the anode in an electrochemical manner; forming an electrode for the anode by use of the synthesized fuel cell catalyst; and synthesizing an electrolysis catalyst, which is used to electrolyze water, on the electrode as the electrolysis catalyst is loaded into the anode.
Kia Motors Corporation
06/25/15
20150180040

Lead-acid storage battery grid and lead-acid storage battery


A lead-acid battery grid used for an electrode of a lead-acid battery, wherein the lead-acid battery grid is made of a pb alloy containing at least one of sn or ca, and includes an upper frame constituting an upper side of the lead-acid battery grid, a lower frame constituting a lower side of the lead-acid battery grid, and a meshed part being present between the upper frame and the lower frame and including intersecting strands, a ratio wu/w of a mass wu of an upper half of the meshed part to a total mass w of the meshed part is 62.5% or higher and 67% or lower, and a cover layer containing a larger amount of sn than the strands is formed on at least part of a surface of the strands, and the cover layer is not formed on a surface of the lower frame.. .
Panasonic Intellectual Property Management Co., Ltd.
06/25/15
20150180039

Sustainable current collectors for lithium batteries


The claimed invention relates to a current collector product for one or more galvanic battery cells. Currently, the metal considered as current collector for the negative electrode is copper.
Lifesize Ab
06/25/15
20150180036

Nonaqueous electrolyte secondary battery


A nonaqueous electrolyte secondary battery includes: a positive electrode having a positive electrode mixture layer, a negative electrode, and a nonaqueous electrolyte. The positive electrode mixture layer includes a positive electrode active material (1) and an inorganic phosphate.
Toyota Jidosha Kabushiki Kaisha
06/25/15
20150180035

Carbon material for power storage device electrode, producing the same and power storage device using the same


A method for producing a vitreous carbon material which can serve as a carbon material for a power storage device in the method, a polymer material, having six-membered ring structures in its basic carbon skeleton and having a nitrogen atom, is heated at a temperature of 1000° c. To 2100° c.
Panasonic Intellectual Property Management Co., Ltd.
06/25/15
20150180034

Lithium ion secondary battery


[problem] to provide a lithium ion secondary battery having excellent high-rate discharge characteristics. [solution] excellent high-rate discharge characteristics are obtained by a lithium ion secondary battery in which a compound represented by lia(nixcoyal1-x-y)o2 (where 0.95≦a≦1.05, 0.5≦x≦0.9, 0.05≦y≦0.2, and 0.7≦x+y≦1.0) is used as a positive electrode active material in a positive electrode, the positive electrode has an electrode density of 3.75 to 4.1 g/cm3, and the positive electrode has a bet specific surface area of 1.3 to 3.5 m2/g as an electrode..
Tdk Corporation
06/25/15
20150180033

Sealed nonaqueous electrolyte secondary battery and producing same


The sealed nonaqueous electrolyte secondary battery includes a nonaqueous electrolyte containing a gas generator that is decomposed to generate a gas when a prescribed battery voltage is exceeded, and a battery case that includes a current interrupt device that operates when the pressure within the battery case rises accompanying the gas generation. A positive electrode (10) has a positive electrode mixture layer (14) that contains at least a positive electrode active material (16).
Toyota Jidosha Kabushiki Kaisha
06/25/15
20150180032

Cobalt-stabilized lithium metal oxide electrodes for lithium batteries


Y[xli2mo3.(1-x)lim′o2].(1-y)li1+dmn2-z-dm″zo4; wherein 0≦x≦1; 0.75≦y<1; 0<z≦2; 0≦d≦0.2; and z-d≦2. M comprises one or more metal ions that together have an average oxidation state of +4; m′ comprises one or more metal ions that together have an average oxidation state of +3; and m″ comprises one or more metal ions that together with the mn and any excess proportion of lithium, “d”, have a combined average oxidation state between +3.5 and +4.
06/25/15
20150180031

Lithium metal oxide electrodes for lithium batteries


A lithium-rich spinel metal oxide electrode material has the formula: li1+dmn2−y−dmyo4, wherein 0<d≦0.2; 0.2<y≦0.6, and m comprises ni. The electrode material provides, in many cases, improved capacity retention on cycling and superior capacity when utilized in the positive electrode of a lithium cell relative to conventional electrode materials.
Uchicago Argonne, Llc
06/25/15
20150180028

Structural battery half cell, a structural battery and their manufacture


There is provided a battery and battery half cell comprising at least one carbon fiber as negative electrode, said carbon fiber comprising a plurality of layers with carbon atoms having graphite structure, and ability of intercalating metal ions, said carbon fiber having a strength of at least 1 gpa and a stiffness of at least 100 gpa in the longitudinal direction of said carbon fiber, said carbon fiber at least partially coated with at least one electrically insulating polymer layer acting as an electrolyte, wherein said insulating polymer layer is permeable for metal ions, and has a stiffness of at least 0.5 mpa, an ionic conductivity of at least 10−10 s/m and an electrical resistivity of at least 1010 Ωm, said insulating layer a thickness in the interval 10-200 nm. Advantages include possibility to utilize thin layers of electrolytes without creating large ohmic losses, structural batteries can comprise carbon fibers..
Swerea Sicomp Ab
06/25/15
20150180027

Multi-component intermetallic electrodes for lithium batteries


Multi-component intermetallic negative electrodes prepared by electrochemical deposition for non-aqueous lithium cells and batteries are disclosed. More specifically, the invention relates to composite intermetallic electrodes comprising two or more compounds containing metallic or metaloid elements, at least one element of which can react with lithium to form binary, ternary, quaternary or higher order compounds, these compounds being in combination with one or more other metals that are essentially inactive toward lithium and act predominantly, but not necessarily exclusively, to the electronic conductivity of, and as current collection agent for, the electrode.
Uchicago Argonne, Llc
06/25/15
20150180026

Positive electrode active material for non-aqueous electrolyte secondary battery and producing the same


A positive electrode active material for a non-aqueous electrolyte secondary battery, the positive electrode active material including: core particles containing a lithium-transition metal composite oxide represented by the formula: liani1-x-ycoxm1ym2zo2, wherein a, x, y, and z satisfy the respective relationships: 1.00≦a≦1.50, 0.00≦x≦0.50, 0.00≦y≦0.50, 0.00≦z≦0.02, and 0.00≦x+y≦0.70, m1 represents at least one element selected from the group consisting of mn and al, and m2 represents at least one element selected from the group consisting of zr, w, ti, mg, ta, nb, and mo; and a coating layer formed over at least a portion of the surface of the core particles, the coating layer contains magnesium, phosphorus, and oxygen, wherein the coating layer is obtained by individually supplying a first solution containing a magnesium salt of an organic acid and a second solution containing phosphorus and oxygen to the surface of the core particles and subjecting the resultant particles to heat treatment.. .
Nichia Corporation
06/25/15
20150180024

Positive electrode material for sodium batteries and producing same


The invention is to provide a positive electrode material for sodium batteries, which has high operating potential and enable charging and discharging at high potential, and a method for producing thereof. Disclosed is a positive electrode material for sodium batteries, comprising positive electrode active material particles represented by the following general formula (1), and an electroconductive carbonaceous material that coats at least part of the surface of the positive electrode active material particles: general formula (1): naxmy(ao4)z(p2o7)w wherein m is at least one selected from the group consisting of ti, v, cr, mn, fe, co, ni, cu and zn; a is at least one selected from the group consisting of al, si, p, s, ti, v and w; x is a value that satisfies 4≧x≧2; y is a value that satisfies 4≧y≧1; z is a value that satisfies 4≧x≧0; w is a value that satisfies 1≧w≧0; and at least one of z and w is 1 or more..
Toyota Jidosha Kabushiki Kaisha
06/25/15
20150180023

Multifunctional hybrid coatings for electrodes made by atomic layer deposition techniques


An electroactive material for use in an electrochemical cell, like a lithium ion battery, is provided. The electroactive material comprises a multifunctional hybrid protective coating system formed over an electroactive material.
Gm Global Technology Operations Llc
06/25/15
20150180022

High power electrode materials


An lfp electrode material is provided which has improved impedance, power during cold cranking, rate capacity retention, charge transfer resistance over the current lfp based cathode materials. The electrode material comprises crystalline primary particles and secondary particles, where the primary particle is formed from a plate-shaped single-phase spheniscidite precursor and a lithium source.
A123 Systems, Llc
06/25/15
20150180021

Electrode materials for rechargeable batteries


An electrode includes selenium, a selenium-containing compound, selenium-carbon composite, a selenium-containing compound-carbon composite, or a mixture thereof; a carbon electronic conductor; a binder; and a current collector; wherein: the electrode is a solid electrode.. .
Uchicago Argonne, Llc
06/25/15
20150180019

Negative active material for lithium secondary battery, preparing the same, negative electrode comprising the same, and lithium secondary battery comprising same


The present invention relates to a negative active material for a rechargeable lithium battery, a method of manufacturing the negative active material, and a rechargeable lithium battery including the negative active material. The negative active material includes a first graphite particle including graphite pieces; and at least one second particle selected from the group consisting of an element particle, an element compound particle, a composite particle, and a carbon composite particle, and a combination particle thereof, wherein the element particle, the element compound particle, the composite particle, and the carbon composite particle are selected from the group consisting of si, sn, al, ge, pb, and combinations thereof; wherein each of the graphite pieces has a thickness ranging from 0.01 μm to 0.1 μm and the graphite pieces are linked to one another forming a curved side; and wherein the at least one second particle is dispersed between the graphite pieces..
Knu-industry Cooperation Foundation
06/25/15
20150180018

Method for producing electrode, and battery


Disclosed is a technique capable of minimizing defects, such as pinholes, in an electrode. A negative electrode forming step includes a mixture preparing step for preparing a paste-like negative electrode mixture containing a negative electrode active material, and an applying step for applying the electrode mixture onto the surface of a sheet-like negative electrode current collector.
Toyota Jidosha Kabushiki Kaisha
06/25/15
20150180015

High voltage battery for vehicles


A high voltage battery for vehicles includes an electrode tab that is divided into a first part placed near a battery cell, and a second part placed near a terminal. A first part extension extends from the first part and is fixed to a lower pouch.
Hyundai Motor Company
06/25/15
20150180013

High voltage battery for vehicles


A high voltage battery for vehicles is provided and includes an electrode tab that is divided into a first part disposed substantially adjacent to a battery cell and a second part disposed substantially adjacent to a terminal. A first part extension extends from the first part and is fixed to a lower pouch and a second part extension extends from the second part and is fixed to an upper pouch.
Hyundai Motor Company
06/25/15
20150180012

Power storage apparatus


Two or more module batteries are arranged in an array and connected through wiring. The outer surface of a first side wall of a case faces in a first direction without facing the others of the two or more module batteries.
Ngk Insulators, Ltd.
06/25/15
20150180008

Secondary battery and secondary battery module


A secondary battery of a secondary battery module includes an electrode assembly including a first electrode plate, a second electrode plate, and a separator between the first and second electrode plates, a case accommodating the electrode assembly, a cap plate coupled to the case, and first and second terminals each having a flat shape and each coupled to the cap plate. The first terminal may include a first terminal plate electrically coupled to the first electrode plate and formed of a first material.
Samsung Sdi Co., Ltd.
06/25/15
20150180004

Battery pack


A battery pack has a plurality of series-connected batteries each having an electrode body, a battery case, a positive extending member, a positive external terminal mechanically joined and electrically connected to a positive external extending part of the positive extending member, by caulking deformation thereof, a negative extending member, and a negative external terminal mechanically joined and electrically connected to a negative external extending part of the negative extending member, by caulking deformation thereof. Among the positive and negative external extending parts, the positive and negative external terminals, the metal making up the positive external extending part has the lowest tensile strength.
Toyota Jidosha Kabushiki Kaisha
06/25/15
20150180000

Separator enclosures for electrodes and electrochemical cells


The disclosure provides electrochemical cells including a separator enclosure which encloses at least a portion of a positive or negative electrode. In an embodiment, the separator generates a contact force or pressure on at least a portion of the electrode which can improve the performance of the cell.
California Institute Of Technology
06/25/15
20150179998

Electrode, secondary battery, battery pack, electric vehicle, electric power storage system, electric power tool, and electronic apparatus


(r1 to r6 are each one of a hydrogen group (—h), a monovalent hydrocarbon group, a monovalent hydroxyl-group-containing hydrocarbon group, a monovalent group obtained by bonding one or more monovalent hydrocarbon groups and one or more oxygen bonds (—o—), a monovalent group obtained by bonding one or more monovalent hydroxyl-group-containing hydrocarbon groups and one or more oxygen bonds, and a monovalent group obtained by bonding two or more thereof.). .
06/25/15
20150179996

Method for producing resin film for non-aqueous electrolyte secondary battery and resin film for non-aqueous electrolyte secondary battery


An object of the present invention is to provide a method for producing a resin film for a non-aqueous electrolyte secondary battery that does not inhibit the movement of ions such as lithium ions and that is arranged between a separator and a positive or negative electrode; and a resin film for a non-aqueous electrolyte secondary battery obtained by the production method. The method for producing a resin film for a non-aqueous electrolyte secondary battery comprises the steps of: coating a separator with a resin composition containing a solvent and a vinylidene fluoride copolymer obtained by copolymerizing vinylidene fluoride and a compound represented by formula (1) below (coating step); and drying the separator on which the resin composition has been coated (drying step).
Kureha Corporation
06/25/15
20150179993

Battery cell and closing the battery cell


The invention relates to a battery cell (10) having a cell housing (12) which comprises a housing container (14) and a housing cover (16), two electrodes that are arranged in an inner region of the housing container (14), an electrolyte material that is arranged in the inner region of the housing container (14) and that surrounds the electrodes, and two electrical contacts which in each case are electrically coupled to one of the electrodes and which extend from the inner region of the housing container (14) through the housing cover (16) into a region outside of the cell housing (12), wherein the housing cover (16) has an overlap area (18) at an outer edge, in which overlap area the housing cover (16) and an edge region of the housing container (14) are arranged parallel to each other, wherein in the overlap area (18) a flanged seam (20) is formed, in order to close the cell housing (12).. .
Robert Bosch Gmbh
06/25/15
20150179991

Power storage module and power storage device


A battery module has a first power generating element (20) and a second power generating element (20) that are electrically connected in series to perform charging and discharging, a case (10) that houses the first power generating element and the second power generating element in a sealed state, a positive electrode terminal (52) that is electrically connected to a positive electrode of the first power generating element, a negative electrode terminal (53) that is electrically connected to a negative terminal of the second power generating element, and a valve (12d) that releases a gas generated in the case to the outside. The positive electrode terminal, the negative electrode terminal, and the case are provided in an installation area of the case that faces a specified direction, and the positive electrode terminal and the negative electrode terminal are disposed in one end side of the installation area while the valve is disposed in the other end side of the installation area..
Toyota Jidosha Kabushiki Kaisha
06/25/15
20150179983

Light emitting element and light emitting device


According to one embodiment, a light emitting element includes a first electrode, a second electrode, a light emitting layer, and a conductive section. The second electrode is provided opposite to the first electrode.
Kabushiki Kaisha Toshiba
06/25/15
20150179982

Organic electroluminescent element and light emitting device


According to one embodiment, an organic electroluminescent element includes a first electrode, a reflective layer provided opposite to the first electrode, an organic light emitting layer provided between the first electrode and the reflective layer, a second electrode provided between the organic light emitting layer and the reflective layer, an optical buffer layer provided between the second electrode and the reflective layer, and a plurality of light extraction portions. The plurality of light extraction portions are provided between the second electrode and the organic light emitting layer.
Kabushiki Kaisha Toshiba
06/25/15
20150179980

Luminescence element, lighting device including the same, and manufacturing the same


A luminescence element includes a substrate, a first electrode layer located on the substrate, a second electrode layer located above the first electrode layer and arranged to oppose the first electrode layer, and an emitting layer between the first electrode layer and the second electrode layer. The second electrode layer includes a light-transmitting conductive layer that contains a conductive polymer and a cured resin in which constituent molecules are crosslinked with one another..
Panasonic Intellectual Property Management Co., Ltd.
06/25/15
20150179978

Display device


A display device related to one embodiment of the present invention includes a first substrate arranged with a plurality of pixels in the shape of a matrix, an insulation film arranged above the first substrate, a first electrode arranged above the insulation film, a second electrode arranged on an upper layer of the first electrode, and an organic el layer arranged between the first electrode and the second electrode, wherein the insulation film includes a plurality of concave parts arranged corresponding to each of the plurality of pixels on the side of the first electrode, the first electrode, the organic el layer and the second electrode are stacked in order above the insulation film and the concave part, and the an insulation layer is covering an end part of the first electrode arranged above the concave part is arranged on an interface part sectioning each of the plurality of pixels.. .
Japan Display Inc.
06/25/15
20150179977

Light-emitting device


A light-emitting device includes: a light-emitting element including a transparent electrode, a reflecting electrode, and an organic layer that includes a light-emitting layer; a transparent multilayer body including a low-refractive-index layer and a high-refractive-index layer, the high-refractive-index layer being provided in contact with the transparent electrode; a first uneven structure at an interface between the low-refractive-index layer and the high-refractive-index layer, the first uneven structure including depressions and projections, a height of each of the projections relative to the depressions being 400 nm or more; and a second uneven structure at an interface between the reflecting electrode and the organic layer, the second uneven structure including depressions and projections, a height of each of the projections relative to the depressions in the second uneven structure being 20 nm or more and 100 nm or less.. .
Panasonic Intellectual Property Management Co., Ltd.
06/25/15
20150179974

Organic electroluminescence display device


An organic electroluminescence (el) display device, includes a lower electrode on a substrate; an assistant electrode on the substrate and spaced apart from the lower electrode; an organic material layer on the lower electrode and the assistant electrode, the organic material layer including a light-emitting layer on the lower electrode; an upper electrode on the organic material layer; and aa carrier generation material layer between the assistant electrode and the upper electrode, the organic material layer being between one or more of the carrier generation material layer and the assistant electrode, or the carrier generation material layer and the upper electrode.. .
Samsung Display Co., Ltd.
06/25/15
20150179972

Electrode contacts


A device structure providing contact to conductive layers via a deep trench structure is disclosed. The device includes a first dielectric layer including a first opening.
Ignis Innovation Inc.
06/25/15
20150179971

Organic electroluminescent element


The organic electroluminescent element includes: a substrate; a first electrode on a surface of the substrate; a second electrode opposite the first electrode; and a functional layer that is between the first electrode and the second electrode and includes at least a light emission layer. In this organic electroluminescent element, the first electrode is a metal electrode and also is a light-reflective electrode, the second electrode is a light-transmissive electrode, and thus light is allowed to emerge outside from the second electrode.
Sumitomo Chemical Company, Limited
06/25/15
20150179965

Inverted organic electronic device and manufacturing the same


Disclosed is a method for manufacturing an inverted organic electronic device. The method includes preparing a substrate having a first electrode; depositing a mixture of a cathode interface material and a photo active material onto the first electrode to form a bilayer or composite layer of a cathode interface layer and a photo active layer, followed by forming an anode interface layer on the bilayer or composite layer; and forming a second electrode on the anode interface layer.
Gwangju Institute Of Science And Technology
06/25/15
20150179958

Organic electroluminescent element, lighting device and display device


Provided is an organic el element configured to have at least one organic layer including a light emitting layer interposed between a positive electrode and a negative electrode, in which the light emitting layer contains an iridium complex compound represented by any one of formulas (1) to (4), and the maximum emission wavelength of the iridium complex compound is 470 nm or less.. .
Konica Minolta Inc.
06/25/15
20150179946

Method for making organic light emitting diode array


The disclosure relates to a method of making organic light emitting diode array. A base defining a plurality of convexities is provided.
Hon Hai Precision Industry Co., Ltd.
06/25/15
20150179945

Method for making organic light emitting diode array


The disclosure relates to a method of making organic light emitting diode array. A base defining a number of convexities is provided.
Hon Hai Precision Industry Co., Ltd.
06/25/15
20150179944

Method for making organic light emitting diode array


The disclosure relates to a method of making organic light emitting diode array. A base defining a plurality of convexities is provided.
Hon Hai Precision Industry Co., Ltd.
06/25/15
20150179936

Memory cells and methods of forming memory cells


Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron.
Micron Technology, Inc.
06/25/15
20150179932

Phase change memory cell with heat shield


A method for fabricating the phase change memory cells. The method includes forming an electrically conductive bottom electrode within a substrate.
International Business Machines Corporation
06/25/15
20150179930

Schottky barriers for resistive random access memory cells


Provided are resistive random access memory (reram) cells having schottky barriers and methods of fabricating such reram cells. Specifically, a reram cell includes two schottky barriers, one barrier limiting an electrical current through the variable resistance layer in one direction and the other barrier limiting a current in the opposite direction.
Intermolecular Inc.
06/25/15
20150179926

Magnetoresistive element


According to one embodiment, a magnetoresistive element comprises a storage layer having perpendicular magnetic anisotropy with respect to a film plane and having a variable direction of magnetization, a reference layer having perpendicular magnetic anisotropy with respect to the film plane and having an invariable direction of magnetization, a tunnel barrier layer formed between the storage layer and the reference layer and containing o, and an underlayer formed on a side of the storage layer opposite to the tunnel barrier layer. The reference layer comprises a first reference layer formed on the tunnel barrier layer side and a second reference layer formed opposite the tunnel barrier layer.
06/25/15
20150179921

Piezoelectric transformer


A piezoelectric transformer that includes a piezoelectric body having driving portions and a power generating portion, an input electrode, and an output electrode. The driving portions and the power generating portion are arranged in the lengthwise direction of the piezoelectric body.
Murata Manufacturing Co., Ltd.
06/25/15
20150179918

Plasma cleaning of superconducting layers


In a “window-junction” formation process for josephson junction fabrication, a spacer dielectric is formed over the first superconducting electrode layer, then an opening (the “window” is formed to expose the part of the electrode layer to be used for the junction. In an atomic layer deposition (ald) chamber (or multi-chamber sealed system) equipped with direct or remote plasma capability, the exposed part of the electrode is sputter-etched with ar, h2, or a combination to remove native oxides, etch residues, and other contaminants.
Intermolecular Inc.
06/25/15
20150179917

Atomic layer deposition of metal-oxide tunnel barriers using optimized oxidants


Metal oxide tunnel barrier layers for superconducting tunnel junctions are formed by atomic layer deposition. Both precursors include a metal (which may be the same metal or may be different).
Intermolecular Inc.
06/25/15
20150179916

Catalytic growth of josephson junction tunnel barrier


A tunnel barrier layer in a superconducting device, such as a josephson junction, is made from catalytically grown silicon dioxide at a low temperature (<100 c, e.g., 20-30 c) that does not facilitate oxidation or silicide formation at the superconducting electrode interface. The tunnel barrier begins as a silicon layer deposited on a superconducting electrode and covered by a thin, oxygen-permeable catalytic layer.
Intermolecular, Inc.
06/25/15
20150179908

Substrate for semiconductor device, semiconductor device having the substrate, and manufacturing method thereof


A substrate for a semiconductor device is provided. The substrate includes a first metal line, a second metal line, a metal support part, a first insulating part, and a second insulating part.
Research & Business Foundation Sungkyunkwan University
06/25/15
20150179907

Semiconductor light emitting device


A semiconductor light emitting device includes a semiconductor layer including a light emitting layer, a p-side electrode provided on a second surface of the semiconductor layer, and an n-side electrode provided on the semiconductor layer to be separated from the p-side electrode. The p-side electrode includes a plurality of contact metal selectively provided on the semiconductor layer in contact with the second surface, a transparent film provided on the semiconductor layer in contact with the second surface between the plurality of contact metal, and a reflective metal provided on the contact metal and on the transparent film in contact with the contact metal, the reflective metal including silver.
Kabushiki Kaisha Toshiba
06/25/15
20150179905

Light emitting device, display device, and manufacturing light emitting device


A light emitting device in which a plurality of led chips are arranged. Each of the plurality of led chips include a light emitting region that is formed on a substrate, a first pad electrode that is formed on the substrate, and a through-hole that penetrates the substrate.
Panasonic Intellectual Property Management Co., Ltd.
06/25/15
20150179902

Led package


The present invention is related to a light emitting diode (led) package. The led package includes a blue led chip, a first electrode, a second electrode and a phosphor layer.
Advanced Optoelectronic Technology, Inc.
06/25/15
20150179901

Method of fabricating white led devices


A light emitting device and a method of fabricating the same is provided. The device includes an led chip having a first main surface, a second main surface opposing the first main surface, and one or more side surfaces extending between the first and second main surfaces.
06/25/15
20150179896

Package structure of light emitting diode


A package structure of light emitting diode includes a substrate and a light emitting diode die. The substrate has an upper surface and a lower surface opposite to each other.
Genesis Photonics Inc.
06/25/15
20150179890

Semiconductor light emitting element


A semiconductor light emitting element includes a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer disposed in this order. The semiconductor light emitting element includes first and second electrodes, a first insulating film and a translucent electrode.
Nichia Corporation
06/25/15
20150179889

Light-emitting device with reflecting electrode


An electrode structure for effectively improving the stability of a semiconductor led includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the led contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability.
Xiamen Sanan Optoelectronics Technology Co., Ltd.
06/25/15
20150179888

Semiconductor light emitting structure and semiconductor package structure


A semiconductor light emitting structure includes an epitaxial structure, an n-type electrode pad, a p-type electrode pad and an insulation layer. The n-type electrode pad and the p-type electrode pad are disposed on the epitaxial structure apart, wherein the p-type electrode pad has a first upper surface.
Genesis Photonics Inc.
06/25/15
20150179887

Light emitting diode


A light emitting diode includes an epitaxial substrate, an active layer, a tunneling layer, a current spreading layer, and an electrode unit. The active layer includes a first conductive type film, a quantum well structure, and a second conductive type film that is made from alyinzga(1-y-z)n, wherein 0<y<1, 0≦z<1, and 0<(y+z)≦1.
National Chung-hsing University
06/25/15
20150179886

Diode having vertical structure


A light emitting diode includes a conductive layer, an n-gan layer on the conductive layer, an active layer on the n-can layer, a p-gan layer on the active layer, and a p-electrode on the p-gan layer. The conductive layer is an n-electrode..
Lg Innotek Co., Ltd.
06/25/15
20150179884

Light emitting device and light emitting apparatus having the same


A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer, under the transmissive substrate; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode. A transmissive resin layer is on the transmissive substrate and an insulating layer is between the insulating support member and the reflective electrode layer..
Lg Innotek Co., Ltd.
06/25/15
20150179879

Light emitting diode with improved light extraction efficiency


Disclosed is a light emitting diode (led) having improved light extraction efficiency. The led includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer.
Seoul Viosys Co., Ltd.
06/25/15
20150179877

Nanowire device


A nanowire device and a method of forming a nanowire device that is poised for pick up and transfer to a receiving substrate are described. In an embodiment, the nanowire device includes a base layer and a nanowire on and protruding away from a first surface of the base layer.
Luxvue Technology Corporation
06/25/15
20150179869

Amorphous silicon photoelectric device and fabricating method thereof


An amorphous-silicon photoelectric device and a fabricating method thereof are disclosed. The amorphous-silicon photoelectric device includes: a substrate; a thin-film transistor and a photosensor with the photodiode structure, which are provided at different positions on the substrate; and a contact layer; in which the contact layer is located below the photosensor, and the contact layer is partially covered by the photosensor, moreover, the contact layer and the gate-electrode layer in the thin-film transistor are provided in a same layer and of a same material.
Beijing Boe Optoelectronics Technology Co., Ltd.
06/25/15
20150179863

Avalanche photodiode utilizing interfacial misfit array


According to some embodiments of the present invention, an avalanche photodiode includes a first electrode, a second electrode spaced apart from the first electrode, a photon absorber layer formed to be in electrical connection with the first electrode, and a charge-carrier multiplication layer formed to be in electrical connection with the second electrode. The photon absorber layer is a semiconducting material that has a first lattice constant, and the charge-carrier multiplication layer is a semiconducting material that has a second lattice constant that is different from the first lattice constant.
Lancaster University Business Enterprises Ltd
06/25/15
20150179858

Solar cell and manufacturing method thereof


A solar cell includes a crystalline silicon semiconductor substrate, an intrinsic amorphous silicon semiconductor layer, an amorphous silicon semiconductor layer and a transparent conductive layer. The crystalline silicon semiconductor substrate possesses a first doped type and a trench is formed thereon to form an enclosed area to define a first electrode region in the enclosed area and a second electrode region out of the enclosed area.
Neo Solar Power Corp.
06/25/15
20150179840

Light receiving/emitting element, solar cell, optical sensor, light emitting diode, and surface emitting laser element technical field


A light receiving/emitting element 11 includes: a light receiving/emitting layer 21 in which a plurality of compound semiconductor layers are stacked; and an electrode 30 having a first surface 30a and a second surface 30b and made of a transparent conductive material, in which the second surface faces the first surface 30a, and the electrode is in contact, at the first surface 30a, with the light receiving/emitting layer 21. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surface 30a of the electrode 30 is higher than concentration of the additive contained in the transparent conductive material near the second surface 30b of the electrode 30..
Suzhou Institute Of Nano-tech And Nano-bionics, Chinese Academy Of Sciences
06/25/15
20150179837

Solar cell and manufacturing the same


A solar cell is discussed. The solar cell includes a semiconductor substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type, which is positioned at a front surface of the semiconductor substrate, a front passivation part positioned on a front surface of the emitter region, a front electrode part which passes through the front passivation part and is electrically connected to the emitter region, a back passivation part positioned on a back surface of the semiconductor substrate, and a back electrode part which passes through the back passivation part and is electrically connected to the semiconductor substrate.
Lg Electronics Inc.
06/25/15
20150179835

Solar cell


A solar cell includes an opto-electrical conversion structure, a first electrically-conductive structure, and a second electrically-conductive structure. The opto-electrical conversion structure has a light receiving surface and a back surface opposite to the light receiving surface.
Au Optronics Corporation
06/25/15
20150179833

Photodetector and manufacturing the same


A photodetector includes a substrate and an insulating arrangement formed in the substrate. The insulating arrangement electrically insulates a confined region of the substrate.
Infineon Technologies Ag
06/25/15
20150179832

Photodetectors based on wurtzite mgzno


A photodetector (pd) includes a substrate, and a zno nucleation layer on the substrate. A wurtzite mgxzn1-xo layer is on the zno nucleation layer, wherein x is a mole fraction between 0 and 0.62.
University Of Central Florida Research Foundation, Inc.
06/25/15
20150179823

Electrode structure for nitride semiconductor device, production method therefor, and nitride semiconductor field-effect transistor


According to an electrode structure of an embodiment of the invention, an ohmic electrode is provided from recess to a surface of an insulating film without being in contact with the surface of the nitride semiconductor multilayer body, so that the insulating film covers the surface of the algan barrier layer. Accordingly, during the formation process of the ohmic electrode by dry etching, the surface of the nitride semiconductor multilayer body can be protected by the insulating film..
Sharp Kabushiki Kaisha
06/25/15
20150179822

Semiconductor device capable of reducing influences of adjacent word lines or adjacent transistors and fabricating method thereof


A semiconductor device capable of reducing influences of adjacent word lines is provided in the present invention. The semiconductor device includes: a substrate, and a word line disposed in the substrate.
Nanya Technology Corp.
06/25/15
20150179818

Method of manufacturing nonvolatile semiconductor storage device and nonvolatile semiconductor storage device


A method of nonvolatile semiconductor storage device including forming a tunnel insulating film so as to contact a semiconductor substrate; forming a charge trap layer above the tunnel insulating film including a trap layer configured to trap charge and a block layer configured to block penetration of electrons; forming a control electrode so as to contact the charge trap layer; anisotropically etching the control electrode to expose a sidewall of the control electrode; depositing a deposit so as to be attached to a surface of the sidewall of the control electrode exposed by the etching; and anisotropically etching the charge trap layer using the deposit as a mask so that the charge trap layer projects in a gate-length direction from a lower end of the sidewall of the control electrode and a sidewall of the charge trap layer is exposed.. .
Kabushiki Kaisha Toshiba
06/25/15
20150179815

Quantum well igzo devices and methods for forming the same


Embodiments described herein provide indium-gallium-zinc oxide (igzo) devices, such as igzo thin-film transistors (tfts), and methods for forming such devices. A substrate is provided.
Intermolecular, Inc.
06/25/15
20150179814

Graphene devices and methods of manufacturing the same


A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer.
Samsung Electronics Co., Ltd.
06/25/15
20150179812

Thin film transistor and display device using the same


There is provided a bottom gate channel etched thin film transistor that can suppress initial vth depletion and a vth shift. A thin film transistor is formed, including a gate electrode interconnection disposed on a substrate, a gate insulating film, an oxide semiconductor layer to be a channel layer, a stacked film of a source electrode interconnection and a first hard mask layer, a stacked film of a drain electrode interconnection and a second hard mask layer, and a protective insulating film..
Japan Display Inc.
06/25/15
20150179811

Thin film transistor and manufacturing the same, and display unit and electronic apparatus


There are provided a thin film transistor having a simple structure that allows reduction in leakage current at the time of gate negative bias, and a method of manufacturing the thin film transistor, and a display unit and an electronic apparatus. The thin film transistor includes: a gate electrode; a semiconductor film including a channel region that faces the gate electrode; and an insulating film provided at least at a position near an end portion on the gate electrode side of side walls of the semiconductor film..
Sony Corporation
06/25/15
20150179810

Semiconductor device


A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film.
Semiconductor Energy Laboratory Co., Ltd.
06/25/15
20150179809

Thin film transistor and manufacturing the same, array substrate and display device


A thin film transistor and method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor comprises a substrate; a gate electrode, a source electrode, a drain electrode and a semiconductor layer formed on the substrate; a gate insulating layer between the gate electrode and the semiconductor layer or between the gate electrode and the source and drain electrodes; an etching stop layer between the semiconductor layer and the source and drain electrodes having a source contact hole and a drain contact hole therein; and a source buffer layer between the source electrode and the semiconductor layer and a drain buffer layer between the drain electrode and the semiconductor layer.
Boe Technology Group Co., Ltd.
06/25/15
20150179806

Semiconductor device


A semiconductor device includes a first transistor which includes a first gate electrode below its oxide semiconductor layer and a second gate electrode above its oxide semiconductor layer, and a second transistor which includes a first gate electrode above its oxide semiconductor layer and a second gate electrode below its oxide semiconductor layer and is provided so as to at least partly overlap with the first transistor. In the semiconductor device, a conductive film serving as the second gate electrode of the first transistor and the second gate electrode of the second transistor is shared between the first transistor and the second transistor.
Semiconductor Energy Laboratory Co., Ltd.
06/25/15
20150179804

Semiconductor device


The semiconductor device includes a transistor including an oxide semiconductor film having a channel formation region, a gate insulating film, and a gate electrode layer. In the transistor, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the thickness of the gate insulating film is large (equivalent oxide thickness which is obtained by converting into a thickness of silicon oxide containing nitrogen is 5 nm or more and 50 nm or less, preferably 10 nm or more and 40 nm or less).
Semiconductor Energy Laboratory Co., Ltd.
06/25/15
20150179802

Thin film transistor, display substrate having the same and manufacturing a display substrate


A thin film transistor includes a gate electrode, an active pattern over the gate electrode and including an oxide semiconductor, an etch-stop layer covering the active pattern, a source electrode on the etch-stop layer, a drain electrode on the etch-stop layer and spaced from the source electrode, and an active protection pattern between the etch-stop layer and the active pattern and electrically coupled to the source electrode and the drain electrode.. .
Samsung Display Co., Ltd.
06/25/15
20150179801

Thin film transistor and manufacturing the same


The present disclosure provides a thin film transistor and a method of manufacturing the same. The transistor includes:a substrate; a gate electrode, a source electrode, and a drain electrode; and an oxide semiconductor layer; wherein, the oxide semiconductor includes a source region and a drain region which electrically contact with the source electrode and the drain electrode respectively, and a channel region for providing a conductive channel between the source electrode and the drain electrode, wherein, a gate isolation layer is arranged between the oxide semiconductor layer and the gate region electrically contacting with the gate electrode, and an oxide semiconductor protective layer is arranged on the oxide semiconductor layer.
Shenzhen China Star Optoelectronics Technology Co. Ltd.
06/25/15
20150179794

Semiconductor device and manufacturing the same


Disclosed are a semiconductor device and a method of manufacturing a semiconductor device. The device may include an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate, a p type epitaxial layer disposed on the n− type epitaxial layer, an n+ region disposed on the p type epitaxial layer, a trench passing through the p type epitaxial layer and the n+ region and disposed on the n− type epitaxial layer, a p+ region disposed on the n− type epitaxial layer and separated from the trench, a gate insulating layer positioned in the trench, a gate electrode positioned on the gate insulating layer, an oxide layer positioned on the gate electrode, a source electrode positioned on the n+ region, the oxide layer, and the p+ region, and a drain electrode positioned on a second surface of the n+ type silicon carbide substrate, in which channels are positioned on both sides of the trench..
Hyundai Motor Company
06/25/15
20150179791

Silicon carbide semiconductor device and manufacturing same


This silicon carbide semiconductor device includes: a substrate with a principal surface; a silicon carbide layer which is arranged on a side of the principal surface of the substrate and which includes a first impurity region of a first conductivity type; a trench which is arranged in the silicon carbide layer and which has a bottom located in the first impurity region; a trench bottom impurity layer which is arranged in the trench to contact with at least a portion of the bottom of the trench and which is a silicon carbide epitaxial layer of a second conductivity type; a gate insulating film which covers a side surface of the trench and the trench bottom impurity layer; and a gate electrode which is arranged over at least a portion of the gate insulating film that is located inside the trench.. .
Panasonic Corporation
06/25/15
20150179785

Techniques and configurations to reduce transistor gate short defects


Embodiments of the present disclosure describe techniques and configurations to reduce transistor gate short defects. In one embodiment, a method includes forming a plurality of lines, wherein individual lines of the plurality of lines comprise a gate electrode material, depositing an electrically insulative material to fill regions between the individual lines and subsequent to depositing the electrically insulative material, removing a portion of at least one of the individual lines to isolate gate electrode material of a first transistor device from gate electrode material of a second transistor device.
06/25/15
20150179784

Semiconductor device having schottky junction between substrate and drain electrode


A semiconductor device includes a semiconductor substrate that is made of a semiconductor material with a wider band gap than silicon, a field effect transistor, including a front surface element structure, provided on a front surface of the substrate, and a drain electrode having surface contact with the substrate so as to form a schottky junction between the semiconductor substrate and the drain electrode.. .
Fuji Electric Co., Ltd.
06/25/15
20150179782

Field effect transistor


A field effect transistor includes: a stacked body; a finger source electrode; a finger drain electrode; a finger gate electrode; an insulating layer; and a source field plate. The finger drain electrode is provided on parallel to the finger source electrode.
Kabushiki Kaisha Toshiba
06/25/15
20150179775

Method for manufacturing semiconductor device and semiconductor device


An object is to provide a semiconductor device in which defects are reduced and miniaturization is achieved while favorable characteristics are maintained. A semiconductor layer is formed; a first conductive layer is formed over the semiconductor layer; the first conductive layer is etched with use of a first resist mask to form a second conductive layer having a recessed portion; the first resist mask is reduced in size to form a second resist mask; the second conductive layer is etched with use of the second resist mask to form source and drain electrodes each having a projecting portion with a tapered shape at the peripheries; a gate insulating layer is formed over the source and drain electrodes to be in contact with part of the semiconductor layer; and a gate electrode is formed in a portion over the gate insulating layer and overlapping with the semiconductor layer..
Semiconductor Energy Laboratory Co., Ltd.
06/25/15
20150179774

Method for manufacturing semiconductor device


The semiconductor device is manufactured by the following method. A first oxide semiconductor film is formed over a first gate electrode and a first insulating film, oxygen is added to the first oxide semiconductor film, and then a second oxide semiconductor film is formed over the first oxide semiconductor film.
Semiconductor Energy Laboratory Co., Ltd.
06/25/15
20150179773

Igzo devices with reduced threshhold voltage shift and methods for forming the same


Embodiments described herein provide indium-gallium-zinc oxide (igzo) devices, such as igzo thin-film transistors (tfts), and methods for forming such devices. A substrate is provided.
Intermolecular, Inc.
06/25/15
20150179766

Buried local interconnect in finfet structure


A method for fabricating a finfet with a buried local interconnect and the resulting device are disclosed. Embodiments include forming a silicon fin on a box layer, forming a gate electrode perpendicular to the silicon fin over a portion of the silicon fin, forming a spacer on each of opposite sides of the gate electrode, forming source/drain regions on the silicon fin at opposite sides of the gate electrode, recessing the box layer, undercutting the silicon fin and source/drain regions, at opposite sides of the gate electrode, and forming a local interconnect on a recessed portion of the box layer..
International Business Machines Corporations
06/25/15
20150179765

Semiconductor device and fabrication method thereof


An mosfet includes a silicon carbide substrate, an active layer, a gate oxide film, and a gate electrode. The active layer includes a body region where an inversion layer is formed at a region in contact with the gate oxide film by application of voltage to the gate electrode.
Sumitomo Electric Industries, Ltd.
06/25/15
20150179764

Semiconductor device and manufacturing same


A semiconductor device includes first to fourth semiconductor layers, a gate electrode, a field plate electrode, an insulating film, first and second main electrodes, and an insulating section. The second semiconductor layer has the first conductivity type and is provided on the first semiconductor layer.
Kabushiki Kaisha Toshiba
06/25/15
20150179762

Power semiconductor device having gate electrode coupling portions for etchant control


A general insulated gate power semiconductor active element with many gate electrodes arranged in parallel has a laminated structure including a barrier metal film and a thick aluminum electrode film formed over the gate electrodes via an interlayer insulating film. When the aluminum electrode film is embedded in between the gate electrodes in parallel, voids may be generated with the electrodes.
Renesas Electronics Corporation
06/25/15
20150179761

Methods of manufacturing semiconductor devices


Methods of forming semiconductor devices are disclosed. In some embodiments, a first trench and a second trench are formed in a substrate, and dopants of a first conductivity type are implanted along sidewalls and a bottom of the first trench and the second trench.
Taiwan Semiconductor Manufacturing Company, Ltd.
06/25/15
20150179759

Semiconductor device and manufacturing semiconductor device


A semiconductor device includes an electron transit layer formed on a substrate; an electron supply layer formed on the electron transit layer; a doping layer formed on the electron supply layer, the doping layer being formed with a nitride semiconductor in which an impurity element to become p-type and c are doped; a p-type layer formed on the doping layer, the p-type layer being formed with a nitride semiconductor in which the impurity element to become p-type is doped; a gate electrode formed on the p-type layer; and a source electrode and a drain electrode formed on the doping layer or the electron supply layer. The p-type layer is formed in an area immediately below the gate electrode, and a density of the c doped in the doping layer is greater than or equal to 1×107 cm−3 and less than or equal to 1×1019 cm−3..
Transphorm Japan, Inc.
06/25/15
20150179752

Method and contact structure for coupling a doped body region to a trench electrode of a semiconductor device


A semiconductor body has a first surface, a second opposing surface, an edge, an active device region, and an edge termination region. A trench extends from the first surface into the semiconductor body in the edge termination region and includes sidewalls and an insulated electrode.
Infineon Technologies Austria Ag
06/25/15
20150179747

Semiconductor device


A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a source electrode layer and a drain electrode layer which are electrically connected to an oxide semiconductor layer, a gate insulating film over the oxide semiconductor layer; the source electrode layer, and the drain electrode layer; and a gate electrode layer that overlaps with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer with the gate insulating film positioned therebetween.
Semiconductor Energy Laboratory Co., Ltd.
06/25/15
20150179741

Semiconductor device


A parasitic capacitance and a leak current in a nitride semiconductor device are reduced. For example, a 100 nm-thick buffer layer made of aln, a 2 μm-thick undoped gan layer, and 20 nm-thick undoped algan having an al composition ratio of 20% are epitaxially grown in this order on, for example, a substrate made of silicon, and a source electrode and a drain electrode are formed so as to be in ohmic contact with the undoped algan layer.
Panasonic Intellectual Property Management Co., Ltd.
06/25/15
20150179740

Transistor device with strained layer


A method for forming a transistor device is disclosed that includes forming a first gate electrode on a substrate, forming a nitride layer, in particular an sin layer, over the first gate electrode and forming a first strained layer over the nitride layer, in particular the sin layer. A transistor device is also disclosed that includes a first gate electrode, a nitride layer, in particular an sin layer, formed over the first gate electrode and a first strained layer formed over the nitride layer, in particular the sin layer..
Global Foundries Inc.
06/25/15
20150179736

Semiconductor device with device separation structures


A semiconductor device includes a first gate electrode structure, a second gate electrode structure, a device separation structure, and cell separation structures. The first gate electrode structure is buried in a semiconductor portion in a first cell array at a distance to a first surface of the semiconductor portion.
Infineon Technologies Dresden Gmbh
06/25/15
20150179726

Organic display device


The present inversion provides an organic display device comprising at least infrared display pixel, the infrared display pixel includes a transparent substrate which is deposited with a first electrode layer, an infrared organic light emitting layer and a second electrode layer thereon, and the infrared organic light emitting layer is filled with an infrared light emitting material. The present invention can allow the organic display device to carry out large area of infrared display; and the present invention uses the flexible transparent substrate, so as to conveniently use and carry the organic display device..
Shenzhen China Star Optoelectronics Technology Co. Ltd.
06/25/15
20150179724

Organic light emitting diode display device and fabricating the same


An organic light emitting diode display device comprises a driving thin film transistor including a first semiconductor layer, a gate insulating layer formed on the first semiconductor layer. The device further includes a storage capacitor including a first capacitor electrode electrically coupled to a drain electrode of the driving thin film transistor, a buffer layer formed on the first capacitor electrode, a second semiconductor layer formed on the buffer layer, and a second capacitor electrode formed on the second semiconductor layer and electrically coupled to a gate electrode of the driving thin film transistor.
Lg Display Co., Ltd.
06/25/15
20150179723

Method for making organic light emitting diode array


The disclosure relates to a method of making organic light emitting diode array. A base defining a number of convexities is provided.
Hon Hai Precision Industry Co., Ltd.
06/25/15
20150179719

Organic light emitting display device and repair method thereof


An organic light emitting display device can include a substrate, two or more first electrodes positioned on the substrate and spaced apart from one another, an auxiliary electrode positioned between the first electrodes, a barrier rib positioned on the auxiliary electrode and having a reversely tapered structure including at least two layers, a bank layer exposing portions of the first electrodes to define a light emission region, an organic layer positioned in the light emission region and patterned by the barrier rib, and a second electrode positioned on the organic layer and the barrier rib and disposed to be in contact with the auxiliary electrode.. .
Lg Display Co., Ltd.
06/25/15
20150179718

Organic light emitting diode display device and fabricating the same


An organic light emitting diode display device and a method of fabricating the organic light emitting diode display device are discussed. The organic light emitting diode display device includes, a plurality of first electrodes extending in a first direction and a second direction; a common line to adjacent plurality of first electrodes; a pixel definition layer disposed at boundaries of the plurality of first electrodes; an adhesive pattern disposed on the common line; a wall on the adhesive pattern and overlapping the common line; an organic layer on the plurality of first electrodes and on the wall; and a second electrode on the organic layer and contacting the common line in a portion under an overhang of the wall, wherein the organic layer is spaced apart from the adhesive pattern by a distance, and wherein the distance is covered by a portion of the second electrode..
Lg Display Co., Ltd
06/25/15
20150179715

Organic light emitting diode array


The disclosure relates to an organic light emitting diode array. The organic light emitting diode array includes a number of thin-film transistors arranged to form an array, a first insulative layer, a plurality of first electrodes, a number of electroluminescent layers, a patterned second insulative layer, and at least one second electrode.
Hon Hai Precision Industry Co., Ltd.
06/25/15
20150179712

Method for making organic light emitting diode array


The disclosure relates to a method of making organic light emitting diode array. A base defining a plurality of convexities is provided.
Hon Hai Precision Industry Co., Ltd.
06/25/15
20150179711

Organic light emitting diode array


The disclosure relates to an organic light emitting diode array. The organic light emitting diode array includes a base defining a number of convexities spaced from each other, a number of first electrodes located on the convexities, a number of electroluminescent layers located on the first electrodes, a patterned second insulative layer located among the convexities to cover part of the base and expose the electroluminescent layers, and a number of second electrodes electrically connected to the electroluminescent layers.
Hon Hai Precision Industry Co., Ltd.
06/25/15
20150179708

Self-emissive display and manufacturing method thereof


A self-emissive display and manufacturing method thereof are disclosed. In one aspect, the device includes a substrate, a first electrode formed over the substrate, and a pixel defining layer (pdl) formed above at least an end portion of the first electrode, wherein the pdl defines a light emission area and a non-emission area.
Samsung Display Co., Ltd.
06/25/15
20150179707

Transistor, display, and electric apparatus


A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.. .
Sony Corporation
06/25/15
20150179703

Active matrix display panel with ground tie lines


A display panel and a method of forming a display panel are described. The display panel may include a thin film transistor substrate including a pixel area and a non-pixel area.
Luxvue Technology Corporation
06/25/15
20150179691

Solid-state imaging device and electronic apparatus


A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate.
Sony Corporation
06/25/15
20150179689

Array substrate, manufacturing method thereof and display device


An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a display area and a non-display area.
Beijing Boe Optoelectronics Technology Co., Ltd.
06/25/15
20150179687

Array substrate of liquid crystal display device and fabricating the same


An array substrate of a liquid crystal display device and a method of fabricating the array substrate. A gate electrode of a thin film transistor of the array substrate is formed.
Lg Display Co., Ltd.
06/25/15
20150179686

Method of manufacturing a tft-lcd array substrate


A thin film transistor liquid crystal display (tft-lcd) array substrate comprises a gate line, a data line, a pixel electrode and a thin film transistor. The pixel electrode and the thin film transistor are formed in a pixel region defined by intersecting of the gate line and the data line, and the thin film transistor comprises a gate electrode, a semiconductor layer, a source electrode and a drain electrode.
Beijing Boe Optoelectronics Technology Co., Ltd.
06/25/15
20150179682

Semiconductor device and manufacturing the same


It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor film, a source region, and a drain region; a source wiring which is provided over the substrate and is connected to the source region; a drain electrode which is provided over the substrate and is connected to the drain region; an auxiliary capacitor provided over the substrate; a pixel electrode connected to the drain electrode; and a protective film fanned so as to cover the thin film transistor and the source wiring, where the protective film has an opening, and the auxiliary capacitor is formed in the area where the opening is formed..
Semiconductor Energy Laboratory Co., Ltd.
06/25/15
20150179680

Display device, semiconductor device, and manufacturing display device


A display device according to the present disclosure includes: a transistor section that includes a gate insulating film, a semiconductor layer, and a gate electrode layer, the semiconductor layer being laminated on the gate insulating film, the gate electrode film being laminated on an opposite side to the semiconductor layer of the gate insulating film; a first capacitor section that includes a first metal film and a second metal film, the first metal film being disposed at a same level as wiring layers that are electrically connected to the semiconductor layer and is disposed over the transistor section, the second metal film being disposed over the first metal film with a first interlayer insulating film in between; and a display element that is configured to be controlled by the transistor section.. .
Sony Corporation
06/25/15
20150179679

Array substrate, manufacturing method thereof and display device


Embodiments of the present invention provide an array substrate, a manufacturing method thereof and a display device. The method for manufacturing the array substrate comprises: forming a pattern of an active layer of a switching thin-film transistor (tft) and a pattern of a corresponding pixel electrode on a base substrate, in which the active layer of the switching tft and the pixel electrode are on the same layer..
Boe Technology Group Co., Ltd.
06/25/15
20150179677

Liquid crystal display array substrates and a manufacturing the same


A liquid crystal display array substrate and a method for manufacturing the same are provided herein, wherein, the array substrate comprises, first gate lines, arranged on a substrate in parallel, to transfer a gate signal to a display cell; data lines, arranged on a different layer of the substrate from the first gate line but in a direction perpendicular thereto, to transfer a source driver signal to the cell; buses of common electrode lines forming frame structure and outlet lines extending from the buses; and branches of the common electrode lines intersecting with the buses, wherein, switches are placed at the intersections between the buses and the branches. Such a design can greatly increase the rate of detection of open-circuit failures, so that the failures can be repaired timely, and thus the yield of the display can be increased and the cost be saved..
Shenzhen China Star Optoelectronics Technology Co., Ltd.
06/25/15
20150179675

Display device and manufacturing the same


An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor.
Semiconductor Energy Laboratory Co., Ltd.
06/25/15
20150179672

Thin film transistor and manufacturing the same, array substrate, and electronic apparatus


A thin film transistor and a method for manufacturing the same, an array substrate including the thin film transistor, and an electronic apparatus including the thin film transistor or provided with the array substrate. The thin film transistor includes: a gate electrode, a gate insulating layer, an active layer, and a source electrode and a drain electrode, the active layer is formed of a mixture including a semiconductor nano-material and a photoresist material.
Boe Technology Group Co., Ltd.
06/25/15
20150179671

Pixel array and display panel


A pixel array and a display panel are provided. The pixel array includes a plurality of pixel units.
Au Optronics Corporation
06/25/15
20150179670

Display panel and display device


A display panel includes a first substrate on which an electrode line and a switching element are disposed, a second substrate positioned opposite the first substrate, a seal provided between the first substrate and the second substrate, a pad electrode that vertically overlaps the seal and is electrically connected to the electrode line, and a side electrode which is connected to one end of the pad electrode and includes a portion positioned on an exterior facing side of the seal.. .
Lg Electronics Inc.
06/25/15
20150179669

Method of manufacturing array substrate, array substrate and display device


A method of manufacturing an array substrate, an array substrate and a display device are provided. The method of manufacturing the array substrate includes: forming a pattern of a gate metal layer including a gate line and a gate electrode and preserving photoresist at a position on the pattern of the gate metal layer corresponding to a gate lead hole; sequentially forming a gate insulating thin film, a semiconductor thin film and a source/drain metal thin film; removing the photoresist preserved at the position on the pattern of the gate metal layer corresponding to the gate lead hole, and forming the gate lead hole; forming a pattern of a source/drain metal layer including a source electrode, a drain electrode and a data line and a semiconductor layer; and forming a pattern including a pixel electrode layer and a channel..
Boe Technology Group Co., Ltd.
06/25/15
20150179668

Thin film transistor array substrate, fabricating the same and display


A tft array substrate, a method for fabricating the same and a display are disclosed. The tft array substrate comprises: a plurality of gate lines, a plurality of data lines and a plurality of pixel regions defined by intersecting the plurality of gate lines and the plurality of data lines, a pixel electrode is disposed in each of the pixel regions.
Boe Technology Group Co., Ltd.
06/25/15
20150179667

Tft array substrate, display panel and display device


A tft array substrate includes a first electrode layer and a second electrode layer disposed below the first electrode layer. The first electrode layer includes a strip-like first electrode, and the second electrode layer is a sheet-like electrode.
Tianma Micro-electronics Co., Ltd.
06/25/15
20150179662

Cobalt-containing conductive layers for control gate electrodes in a memory structure


A memory film and a semiconductor channel can be formed within each memory opening that extends through a stack including an alternating plurality of insulator layers and sacrificial material layers. After formation of backside recesses through removal of the sacrificial material layers selective to the insulator layers, a metallic barrier material portion can be formed in each backside recess.
Sandisk Technologies Inc.
06/25/15
20150179661

Vertical channel-type 3d semiconductor memory device and manufacturing the same


A vertical channel-type 3d semiconductor memory device and a method for manufacturing the same are disclosed. In one aspect, the device includes a multi-layer film formed by depositing alternating layers of insulation and an electrode material on a substrate.
Institute Of Microelectronics, Chinese Academy Of Sciences
06/25/15
20150179660

Three dimensional nand device with channel located on three sides of lower select gate and making thereof


A select gate transistor for a nand device includes a select gate electrode having a first side, a second side, and top and a bottom, a semiconductor channel located adjacent to the first side, the second side and the bottom of the select gate electrode, and a gate insulating layer located between the channel and the first side, the second side and the bottom of the select gate electrode.. .
Sandisk Technologies, Inc.
06/25/15
20150179657

Semiconductor storage device


A semiconductor storage device is provided with a semiconductor channel region; a first insulating layer including an oxide film disposed in contact with the semiconductor channel region, an yttrium oxide containing film disposed on the oxide film, and a hafnium oxide film having an orthorhombic phase iii structure disposed on the yttrium oxide containing film; and a control electrode disposed on the first insulating layer.. .
Kabushiki Kaisha Toshiba
06/25/15
20150179646

Flip-flop layout architecture implementation for semiconductor device


A semiconductor device includes a substrate including pmosfet and nmosfet regions. First and second gate electrodes are provided on the pmosfet region, and third and fourth gate electrodes are provided on the nmosfet region.
Samsung Electronics Co., Ltd.
06/25/15
20150179643

Semiconductor component with transistor


One aspect relates to a semiconductor component with a semiconductor body, a first main contact pad, a second main contact pad, a normally-on first transistor monolithically integrated in the semiconductor body and a normally-off second transistor monolithically integrated in the semiconductor body. The first transistor is a high electron mobility transistor having a first gate electrode and a first load path controllable via a first gate electrode, and the second transistor has a second gate electrode and a second load path controllable via the second gate electrode.
Infineon Technologies Austria Ag
06/25/15
20150179637

Semiconductor devices


A semiconductor device includes a first doping region extending from a main surface of a semiconductor substrate into the semiconductor substrate. Further, the semiconductor device includes a second doping region arranged adjacent to the first doping region.
Infineon Technologies Ag
06/25/15
20150179633

Reverse blocking transistor device


A transistor device includes at least one transistor cell. The cell includes a drift region, a source region, a body region arranged between the source region and the drift region, and a drain region.
Infineon Technologies Austria Ag
06/25/15
20150179629

Semiconductor structure for electrostatic discharge protection


A semiconductor structure includes a p well formed on a p type substrate; a first n type electrode area formed on a central region of the p well; a first insulating area formed on the p well and surrounding the first n type electrode area; a second n type electrode area formed on the p well and surrounding the first insulating area; a second insulating area formed on the p well and surrounding the second n type electrode area; and a p type electrode area formed on the p well and surrounding the second insulating area; wherein periphery outlines of the first n type electrode area and the second n type electrode area are both 8k sided polygons or circles, and k is a positive integer.. .
Advanced Analog Technology, Inc.
06/25/15
20150179628

Semiconductor structure for electrostatic discharge protection


A semiconductor structure is arranged on an integrated circuit, the integrated circuit includes a seal ring arranged at outer periphery of the integrated circuit, a metal ring arranged at an inner side of the seal ring and a power bus arranged at a side of the metal ring. The semiconductor structure includes a first p type electrode area, a second p type electrode area and a first n type electrode area.
Advanced Analog Technology, Inc.
06/25/15
20150179626

Method of making stacked multi-chip packaging structure


A stacked multi-chip packaging structure comprises a lead frame, a first semiconductor chip mounted on the lead frame, a second semiconductor chip flipped-chip mounted on the lead frame, a metal clip mounted on top of the first and second semiconductor chips and a third semiconductor chip stacked on the metal clip; bonding wires electrically connecting electrodes on the third semiconductor chip to the first and second semiconductor chips and the pins of the lead frame; plastic molding encapsulating the lead frame, the chips and the metal clip.. .
Alpha And Omega Semiconductor Incorporated
06/25/15
20150179615

Semiconductor device and manufacturing the same


To improve reliability of a semiconductor device. In a conductive material that electrically couples a cu pillar electrode and a lead, an alloy part comprised of an alloy of tin and copper is formed inside this conductive material.
06/25/15
20150179557

Semiconductor chips having heat conductive layer with vias


A heat conductive layer is deposited on a first surface of a wafer of semiconductor chips. The heat conductive layer is etched to form vias that expose through-electrodes on the first surface of each semiconductor chip.
International Business Machines Corporation
06/25/15
20150179551

Semiconductor device


A semiconductor device including a semiconductor chip, a first electrode pad and second electrode pad included on one surface of the semiconductor chip, a first conductive post joined by a joining material to the first electrode pad, a plurality of second conductive posts joined by a joining material to the second electrode pad, and a printed substrate, disposed opposing the one surface of the semiconductor chip, on which is formed an electrical circuit to which the first conductive post and second conductive posts are connected. The second conductive posts on the side near the first conductive post are arrayed avoiding a short-circuit prevention region at a distance such that the joining material of the first conductive post and the joining material of the second conductive posts do not link..
Fuji Electric Co., Ltd.
06/25/15
20150179546

Semiconductor device, manufacturing semiconductor device, and electronic device


There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.. .
Sony Corporation
06/25/15
20150179545

Semiconductor devices and methods of manufacturing the same


A semiconductor device includes a through electrode penetrating a substrate such that a first end portion of the through electrode protrudes from a first surface of the substrate, a passivation layer covering the first surface of the substrate and a sidewall of the first end portion of the through electrode, a bump having a lower portion penetrating the passivation layer and coupled to the first end portion of the through electrode, and a lower metal layer disposed between the bump and the first end portion of the through electrode. The lower metal layer extends onto a sidewall of the bump and has a concave shape..
Sk Hynix, Inc.
06/25/15
20150179526

Anti-fuse array of semiconductor device and forming the same


An anti-fuse array of a semiconductor device and a method for forming the same are disclosed. The anti-fuse array for a semiconductor device includes a first-type semiconductor substrate formed to define an active region by a device isolation region, a second-type impurity implantation region formed in the active region, a first-type channel region isolated from the semiconductor substrate by the second-type impurity implantation region, a gate electrode formed over the channel region, and a first metal contact formed over the second-type impurity implantation region..
Sk Hynix Inc.
06/25/15
20150179525

High voltage three-dimensional devices having dielectric liners


High voltage three-dimensional devices having dielectric liners and methods of forming high voltage three-dimensional devices having dielectric liners are described. For example, a semiconductor structure includes a first fin active region and a second fin active region disposed above a substrate.
06/25/15
20150179492

Electrostatic chuck apparatus


Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater..
Sumitomo Osaka Cement Co., Ltd.
06/25/15
20150179457

Method for fabricating semiconductor device with paterned hard mask


A method for fabricating a semiconductor device includes the following steps. First, a first interlayer dielectric is formed on a substrate.
United Microelectronics Corp.
06/25/15
20150179451

Method for processing graphene, producing graphene nanoribbons, and graphene nanoribbons


A gas comprising h2o molecules is introduced into a cluster-generating unit through a nozzle of a gas cluster ion beam device. The introduced water vapor is aggregated by cooling by adiabatic expansion, and beam-shaped h2o clusters are formed.
Tokyo Electron Limited
06/25/15
20150179422

Discharge lamp and vehicle lamp


According to one embodiment, a discharge lamp includes a light-emitting part including a discharge space therein in which a metal halide and a gas are sealed, and a pair of electrodes which protrude toward an inside of the discharge space and are arranged to face each other while separated by a specified distance. Power consumption at a time of stable lighting is 20 w or more and 30 w or less.
Toshiba Lighting & Technology Corporation
06/25/15
20150179417

Plasma monitoring method and plasma monitoring system


A plasma monitoring method using a sensor, the sensor having a substrate; a first electrode, the first electrode being a conductive electrode and formed on the substrate while being isolated from the substrate; an insulating film formed on the first electrode; a contact hole formed in the insulating film and having a depth from a surface of the insulating film to the first electrode; and a second electrode, the second electrode being a conductive electrode, formed on the surface of the insulating film, and faced to plasma during a plasma process, the plasma monitoring method including measuring and monitoring potentials of the first electrode and the second electrode or a potential difference between the first electrode and the second electrode during the plasma process is disclosed. A plasma monitoring system carrying out the plasma monitoring method is also disclosed..
Tohoku University
06/25/15
20150179416

Adapter plate for polishing and cleaning electrodes


An adapter plate configured to be attachable to a universal platen of a cleaning unit for cleaning upper electrodes from a plasma processing chamber is disclosed, the adapter plate includes a support surface and a mounting surface configured to be fastened to the universal platen of the cleaning unit. The support surface is configured to support an inner electrode or an outer electrode of a showerhead electrode assembly for cleaning upper or lower surfaces thereof.
Lam Research Corporation
06/25/15
20150179411

Apparatus for generating reactive gas with glow discharges and methods of use


An apparatus for generating a flow of reactive gas for decontaminating a material, surface or area, which comprises a first electrode member comprising a first conductive sheet and a first plurality of conductive pins protruding from a surface of the first conductive sheet and a second electrode member comprising a second conductive sheet and a second plurality of conductive pins protruding from a surface of the second conductive sheet. The second electrode member is arranged in spaced relationship with the first electrode member to define a reactor channel between the first conductive sheet and the second conductive sheet the first plurality of conductive pins protrude within the reactor channel towards the second conductive sheet and the second plurality of conductive pins protrude within the reactor channel towards the first conductive sheet so as to form air gaps between the first plurality of conductive pins and the second plurality of conductive pins.
Ecole Centrale Des Arts Et Manufactures
06/25/15
20150179410

Dry etching device and electrode thereof


The invention discloses a dry etching device and an electrode thereof. The electrode comprises an electrode base, an insulation layer arranged on the electrode base, and an edge stage located on a peripheral surface of the insulation layer.
Tianma Micro-electronics Co., Ltd.
06/25/15
20150179409

In situ control of ion angular distribution in a processing apparatus


A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.. .
Varian Semiconductor Equipment Associates, Inc.
06/25/15
20150179407

Plasma processing apparatus and plasma processing method


Disclosed is a plasma processing method for generating plasma between an upper electrode connected with a vf power supply and a susceptor disposed to face the upper electrode to perform a plasma processing on a wafer by the plasma. The plasma processing method includes: providing an auxiliary circuit configured to reduce a difference between a reflection minimum frequency of a first route where a high frequency current generated from the vf power supply flows before ignition of the plasma and a reflection minimum frequency of a second route where the high frequency current generated from the vf power supply flows after the ignition of the plasma; igniting the plasma; and maintaining the plasma..
Tokyo Electron Limited
06/25/15
20150179405

Upper electrode and plasma processing apparatus


In an exemplary embodiment, an upper electrode is disposed in a processing chamber to face a susceptor and provided with a plate-like member and an electrode part. In an exemplary embodiment, the plate-like member is formed with a gas distribution hole that distributes a processing gas used for a plasma processing.
Tokyo Electron Limited
06/25/15
20150179390

Radiation generator adjusting beam focusing based upon a diagnostic electrode


A radiation generator is provided that includes a target, a cathode to emit electrons in a downstream direction toward the target, a first conductive member downstream of the cathode, and a second conductive member downstream of the cathode. The first and second conductive members have a potential difference with the cathode such that a resultant electric field accelerates the electrons toward the target.
Schlumberger Technology Corporation
06/25/15
20150179387

Charged particle beam generating apparatus, charged particle beam apparatus, high voltage generating apparatus, and high potential apparatus


An instrument producing a charged particle beam according to the present invention is provided with: a charged particle source; a plurality of first electrodes disposed along a direction of irradiation of charged particles from the charged particle source; a plurality of insulation members disposed between the first electrodes; and a housing mounted around the plurality of first electrodes. The housing is formed from an insulating solid material, and includes a plurality of second electrodes disposed at positions in proximity to the plurality of first electrodes.
Hitachi High-technologies Corporation
06/25/15
20150179367

Switch manufacturing method and switch


A manufacturing method for a switch includes steps of: arranging a plurality of fixed electrodes so as to be supported by a plurality of pins provided within a metal mold; molding a switch case integrally with the fixed electrodes by injecting a first resin into the metal mold; pulling out the pins to take out the switch case from the metal mold; filling a liquid-state second resin into through holes formed in the switch case as traces of removal of the pins; and curing the liquid-state second resin to form a protection portion.. .
Mitsumi Electric Co., Ltd.
06/25/15
20150179356

Hybrid electrochemical capacitor


Hybrid electrochemical capacitors, electronic devices using such capacitors, and associated methods are disclosed. In an example, a hybrid electrochemical capacitor can include a first electrode made from mg, na, zn, al, sn, or li, a second electrode made from a porous material such as porous carbon or passivated porous silicon, and an electrolyte.
06/25/15
20150179355

Stack-type flow energy storage system and charging and discharging energy using the same


Disclosed herein is stack-type flow energy storage system. More particularly, the system includes a stack-type electrode cell composed of fluidic electrode material mixed with an electrolyte and storage tank for the electrode material, thereby remarkably improving stability, output and energy density.
Korea Institute Of Energy Research
06/25/15
20150179353

Photoelectric conversion element


A photoelectric conversion element (100) according to the present disclosure includes: a photoanode (15); a counter electrode (32); a solid compound layer (22) disposed between the photoanode (15) and the counter electrode (32); a charge storage electrode (55) disposed at an interspace from the counter electrode (32); and an electrolyte medium (24) being contained in the solid compound layer (22) and filling the interspace.. .
Panasonic Corporation
06/25/15
20150179352

Dye-sensitized solar cell and preventing elution of catalyst from catalyst electrode


Providing a dye-sensitized solar cell having high durability and thermal resistance, and preventing elution of a platinum group catalyst from a catalytic electrode: by surface-treating the catalytic electrode with (a) a specific sulfur material having a molecular weight of 32 to 10,000 containing a sulfur atom having an oxidation number of −2 to 0, (b) another specific sulfur material containing no sulfur atom having an oxidation number of −2 to 0, but containing a sulfur atom having an oxidation number of +1 to +4 [with the proviso that the sulfur material (b) is such a material that a surface of the surface-treated catalyst electrode has a photoelectron peak within a binding energy range of 161 to 165 ev in an x-ray photoelectron spectrum 1, or (c) a mixture of the sulfur materials (a) and (b); and/or by adding the sulfur material into the electrolyte layer.. .
Shimane Prefectural Government
06/25/15
20150179351

Dye-sensitized solar cell and preventing elution of catalyst from catalyst electrode


Providing a dye-sensitized solar cell having high durability and thermal resistance, and preventing elution of a platinum group catalyst from a catalytic electrode: by surface-treating the catalytic electrode with (a) a specific sulfur material having a molecular weight of 32 to 10,000 containing a sulfur atom having an oxidation number of −2 to 0, (b) another specific sulfur material containing no sulfur atom having an oxidation number of −2 to 0, but containing a sulfur atom having an oxidation number of +1 to +4 [with the proviso that the sulfur material (b) is such a material that a surface of the surface-treated catalyst electrode has a photoelectron peak within a binding energy range of 161 to 165 ev in an x-ray photoelectron spectrum], or (c) a mixture of the sulfur materials (a) and (b); and/or by adding the sulfur material into the electrolyte layer.. .
Shimane Prefectural Government
06/25/15
20150179347

Breakdown inhibitors for electrochemical cells


An electrochemical cell includes a positive electrode, a negative electrode, an electrolyte, and optionally, a separator, wherein at least one of the positive electrode, negative electrode, electrolyte or the optional separator includes a breakdown inhibitor.. .
Refringent Technology Llc
06/25/15
20150179343

Monolithic ceramic electronic component


A method for manufacturing a monolithic ceramic electronic component includes the steps of preparing a first ceramic outer layer, stacking a plurality of inner electrodes and a plurality of ceramic green sheets on the first ceramic outer layer, forming an inner portion, applying first pressing in the stacking direction, forming an outer portion on the inner portion to form a second ceramic outer layer, applying second pressing in the stacking direction to form a multilayer body, cutting the mother multilayer body to obtain individual multilayer bodies, sintering the individual multilayer bodies to obtain ceramic bodies, and forming first and second outer electrodes on the outer surface of each of ceramic bodies.. .
Murata Manufacturing Co., Ltd.
06/25/15
20150179341

Monolithic ceramic electronic component


A method for manufacturing a monolithic ceramic electronic component includes the steps of preparing a first ceramic outer layer, stacking a plurality of inner electrodes and a plurality of ceramic green sheets on the first ceramic outer layer, forming an inner portion, applying first pressing in the stacking direction, forming an outer portion on the inner portion to form a second ceramic outer layer, applying second pressing in the stacking direction to form a multilayer body, cutting the mother multilayer body to obtain individual multilayer bodies, sintering the individual multilayer bodies to obtain ceramic bodies, and forming first and second outer electrodes on the outer surface of each of ceramic bodies.. .
Murata Manufacturing Co., Ltd.
06/25/15
20150179340

Multilayer ceramic capacitor and fabricating the same


There is provided a multilayer ceramic capacitor including: a capacitor main body formed by alternately stacking an internal electrode including an internal electrode-forming material and a dielectric layer; and an external electrode formed on the external surface of the capacitor to be electrically connected to the internal electrode and having an external electrode-forming material, wherein the internal electrode includes a non-diffusion layer including the external electrode-forming material of 2 vol % to 20 vol % and a diffusion layer made of the external electrode-forming material on at least one of the both ends of the non-diffusion layer. The multilayer ceramic capacitor capable of preventing cracking due to the diffusion of electrode materials while stably securing capacitance and the method of fabricating the same can be provided..
Samsung Electro-mechanics Co., Ltd.
06/25/15
20150179339

Multilayer ceramic capacitor


A multilayer ceramic capacitor may include: a ceramic body; first and second external electrodes; first and second internal electrodes; third and fourth internal electrodes being adjacent to the first and second internal electrodes in a thickness direction of the ceramic body, respectively; and first floating electrodes misaligned with the third and fourth internal electrodes in the thickness direction of the ceramic body within the ceramic body and having both end portions overlapped with portions of the third and fourth internal electrodes, respectively. When a distance between the first internal electrode and the third internal electrode or between the second internal electrode and the fourth internal electrode is a and a distance between the third or fourth internal electrode and the first floating electrode is b, b>a may be satisfied..
Samsung Electro-mechanics Co., Ltd.
06/25/15
20150179296

Composition for solar cell electrodes and electrode fabricated using the same


A composition for solar cell electrodes includes a silver (ag) powder, a glass frit containing elemental silver (ag) and at least one element of lead (pb) and bismuth (bi), and an organic vehicle. The glass frit has a mole ratio of ag to pb ranging from about 1:0.1 to about 1:50, or a mole ratio of ag to bi ranging from about 1:0.1 to about 1:20..
Samsung Sdi Co., Ltd.
06/25/15
20150179258

Path isolation in a memory device


Embodiments of the present disclosure describe techniques and configurations for word-line path isolation in a phase change memory (pcm) device. In one embodiment, a memory device includes a memory cell of a memory device, a bit-line coupled to the memory cell, a word-line coupled to the memory cell, a bit-line electrode coupled to the bit-line, a word-line electrode coupled to the word-line, current-limiting circuitry of a selection module coupled to one of the word-line electrode and the bit-line electrode having a lower potential, the current-limiting circuitry to facilitate a selection operation of the memory cell by the selection module, sensing circuitry coupled to the one of the word-line electrode and the bit-line electrode having the lower potential, the sensing circuitry to perform a read operation of the memory cell, and write circuitry coupled to the one of the word-line electrode and the bit-line electrode having the lower potential, the write circuitry to perform a write operation of the memory cell.
Intel Coporation
06/25/15
20150179251

Resistance-change nonvolatile memory device


A selection circuit that selects a memory cell from a memory cell array and a read circuit for reading a resistance state of a resistance change element in the selected memory cell are provided. In memory cells of odd-numbered-layer and even-numbered-layer memory cell arrays that constitute a multilayer memory cell array, each memory cell in any of the layers has a selection element, a first electrode, a first resistance change layer, a second resistance change layer, and a second electrode that are disposed in the same order.
Panasonic Intellectual Property Management Co., Ltd.
06/25/15
20150179201

Devices having electrodes on the trailing edge surface


A slider that includes a slider body, the slider body having a trailing edge surface and an opposing leading edge surface; an air bearing surface (abs) between the trailing edge surface and the leading edge surface; a read/write head located on the trailing edge surface of the slider body; an electrode array located on the trailing edge surface of the slider body, the electrode array including at least a first electrode and at least a second electrode; and first and second bias circuits, wherein the first bias circuit is electrically coupled to the at least first electrode and the second bias circuit is electrically coupled to the at least second electrode.. .
Seagate Technology Llc
06/25/15
20150179133

Display device with integrated touch screen and driving method thereof


A display device with integrated touch screen is provided. The display device includes a panel configured to include a plurality of driving electrodes and a plurality of sensing electrodes and a display driver ic configured to apply a common voltage to the plurality of driving electrodes and the plurality of sensing electrodes when the panel operates in a display driving mode, and when the panel operates in a touch driving mode, generate a pulse-modulated driving pulse according to a timing pulse and a pulse modulation control signal to apply the pulse-modulated driving pulse to the plurality of driving electrodes, and respectively receive a plurality of sensing signals from the plurality of sensing electrodes..
Lg Display Co., Ltd.
06/25/15
20150179132

Display device with integrated touch screen and driving method thereof


Disclosed is a display device with an integrated touch screen. The display device includes a panel configured to operate in a display driving mode and a touch driving mode, the panel including a plurality of driving electrodes and a plurality of sensing electrodes and a display driver integrated circuit (ic) configured to apply a common voltage to the plurality of driving electrodes and the plurality of sensing electrodes during the display driving mode, and the display driver ic is configured to apply a driving pulse to the plurality of driving electrodes during the touch driving mode of the panel and receive one or more sensing signals from the plurality of sensing electrodes responsive to a touch of the integrated touch screen during the touch driving mode of the panel, wherein the display driver ic is configured to adjust a magnitude of the driving pulse from a first level to a second level and subsequently from the second level to a third level during the touch driving mode of the panel, wherein the third level is less than the second level and greater than the first level..
Lg Display Co., Ltd.
06/25/15
20150179122

Discriminative capacitive touch panel


A mutual capacitance touch sensor includes a substrate, and an array of electrode elements formed on the substrate. Each electrode element includes at least one of a first electrode group having at least two drive electrodes and at least one sense electrode, or a second electrode group having at least two sense electrodes and at least one drive electrode.
Sharp Kabushiki Kaisha
06/25/15
20150179121

Liquid crystal display device


Disclosed is a liquid crystal display (lcd) device. The lcd device include first and second gate lines, data lines, a common electrode line formed between adjacent data lines and configured to perpendicularly cross the plurality of first and second gate lines and divide the plurality of pixel areas into first and second areas, first and second thin film transistors (tfts) formed between a corresponding first gate line and a second gate line adjacent to the corresponding first gate line, a protective layer configured to include a first contact hole and a second contact hole, a common electrode formed on the protective layer and coupled to the common electrode line through the first contact hole, an insulation layer formed on the protective layer to cover the common electrode and a pixel electrode formed on the insulation layer..
Lg Display Co., Ltd.
06/25/15
20150179119

Method for driving display device


An object is to provide a convenient display device which consumes sufficiently small amount of power and a method for driving such a display device. The display device can be in an off state with a still image displayed in a still image display mode in which a pixel electrode and a common electrode which are for applying a voltage to the display element are brought into a floating state so that a voltage applied to the display element is held, and a still image is displayed without further supply of a potential.
Semiconductor Energy Laboratory Co., Ltd.
06/25/15
20150179114

Array substrate and liquid crystal display panel and driving method thereof


The present disclosure provides an array substrate and liquid crystal display panel, and a driving method thereof, wherein each pixel unit of the array substrate includes a compensation circuit unit. When proceeding in the direction of scanning and when there is a scanning signal on a scanning line related to a pixel unit in the next row of a present pixel unit, the compensation circuit of the present pixel unit works on a sub electrode of the present pixel unit, such that a ratio of the voltage difference between the sub electrode and a common electrode to the voltage difference between a main electrode and the common electrode during a positive polarity inversion driving period equals a ratio of the voltage difference between the sub electrode and the common electrode to the voltage difference between the main electrode and the common electrode during a negative polarity inversion driving period.
Shenzhen China Star Optoelectronics Technology Co. Ltd.
06/25/15
20150179112

Liquid crystal display device


A liquid crystal display device comprising a backlight and a pixel portion including first to 2n-th scan lines, wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of first to third hues supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first to third hues supplied in a second rotating order, wherein, in a second case of expressing a monochrome image, the first and second pixels controlled by the first to 2n-th scan lines are configured to express the monochrome image by external light reflected by the reflective pixel electrode, and wherein the first rotating order is different from the second rotating order.. .
Semiconductor Energy Laboratory Co., Ltd.
06/25/15
20150179102

Organic light emitting device


Disclosed is an organic light emitting display in which a sensing period during which the source voltage of the driving tft is raised toward a data voltage applied to a gate electrode of the driving tft in order to compensate a change in mobility of the driving tft, a first gate signal is maintained at an on level and a second gate signal is maintained at an off level, and the first and second gate signals are maintained at an off level in a light emission period following the sensing period; and a first falling time of the first gate signal and a second falling time of the second gate signal, which indicate a period of time required to change from the on level to the off level, are set to be longer than a predetermined reference value, respectively.. .
Lg Display Co., Ltd.
06/25/15
20150179095

Light emitting device and driving the same


The present invention specifies the characteristic of a driving transistor provided in a pixel and corrects a video signal to be inputted to the pixel based on the specification. As a result, a light emitting device and its driving method in which influence of fluctuation in characteristic among transistors is removed to obtain clear multi-gray scale are provided.
Semiconductor Energy Laboratory Co., Ltd.
06/25/15
20150179007

Gate apparatus, communication apparatus, communication system, gate control method, and program


Provided is a gate apparatus including a sensor that detects a pedestrian; multiple human body communication electrodes for performing human body communication; and a control unit that determines a position of the pedestrian according to information on the pedestrian detected by the sensor, performs outputting of a connection confirmation request packet through a human body communication electrode corresponding to the determined position, receives a connection confirmation response packet transmitted from a human body communication terminal and performs analysis processing on the received connection confirmation response packet, and performs opening and closing control of a gate opening and closing unit, in which the control unit stores in the connection confirmation request packet an output electrode identifier of a communication electrode that performs packet outputting, and determines whether or not the output electrode identifier and an electrode identifier of the electrode that receives the connection confirmation response packet agree with each other.. .
Felica Networks, Inc.


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Electrode topics: Phosphoric Acid, Internal Combustion Engine, Carbon Atoms, Porous Carbon, Double Layer Capacitor, Graphene Oxide, Aqueous Solution, Lithium Ion, Exhaust Gas, Soot Sensor, Combustion, Calibration, Electronic Apparatus, Electrical Signal, Electric Conversion

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