Popular terms

Electrode topics
Phosphoric Acid
Internal Combustion Engine
Carbon Atoms
Porous Carbon
Double Layer Capacitor
Graphene Oxide
Aqueous Solution
Lithium Ion
Exhaust Gas
Soot Sensor
Combustion
Calibration
Electronic Apparatus
Electrical Signal
Electric Conversion

Follow us on Twitter
twitter icon@FreshPatents

Web & Computing
Cloud Computing
Ecommerce
Search patents
Smartphone patents
Social Media patents
Video patents
Website patents
Web Server
Android patents
Copyright patents
Database patents
Programming patents
Wearable Computing
Webcam patents

Web Companies
Apple patents
Google patents
Adobe patents
Ebay patents
Oracle patents
Yahoo patents

[SEARCH]

Electrode patents



      

This page is updated frequently with new Electrode-related patent applications.




Date/App# patent app List of recent Electrode-related patents
02/04/16
20160037682 
 Auto-compensating temperature valve controller for electro-rheological fluid micro-channel cooled integrated circuit patent thumbnailnew patent Auto-compensating temperature valve controller for electro-rheological fluid micro-channel cooled integrated circuit
A structure and method of using the structure. The structure including an integrated circuit chip having a set of micro-channels; an electro-rheological coolant fluid filling the micro-channels; first and second parallel channel electrodes on opposite sides of at least one micro-channel, the first channel electrode connected to an output of an auto-compensating temperature control circuit, the second channel electrode connected to ground; the auto-compensating temperature control circuit comprising a temperature stable current source connected between a positive voltage rail and the output and having a temperature sensitive circuit connected between ground and the output, a leakage current of the temperature stable current source being essentially insensitive to temperature and a leakage current of the temperature sensitive circuit increasing with temperature..
International Business Machines Corporation


02/04/16
20160037643 
 Array resistor and semiconductor module patent thumbnailnew patent Array resistor and semiconductor module
A semiconductor module includes: a module board, a plurality of chips mounted on the module board, and a plurality of array resistors mounted on the module board, the plurality of array resistors including at least a first array resistor. The first array resistor may include a substrate comprising a top surface, a bottom surface opposite the top surface, and first to fourth side surfaces connecting the top surface to the bottom surface, the first and third side surfaces being opposite each other, and the second and fourth side surfaces being opposite each other; a plurality of first electrodes disposed on the first side surface of the substrate, each first electrode including at least a first portion on the first side surface of the substrate and a second portion on the bottom surface of the substrate; a plurality of second electrodes disposed on the third side surface of the substrate, each second electrode opposite a respective first electrode and including at least a first portion on the third side surface of the substrate and a second portion on the bottom surface of the substrate; for each pair of respective first and second electrodes opposite each other, a resistor disposed on the substrate between the respective first and second electrodes; and at least one third electrode disposed on the second side surface of the substrate, the third electrode including at least a first portion on the second side surface of the substrate and a second portion on the bottom surface of the substrate.
Samsung Electronics Co., Ltd.


02/04/16
20160037640 
 High-frequency component and high-frequency module including the same patent thumbnailnew patent High-frequency component and high-frequency module including the same
In a method for mounting a filter circuit component to obtain desired frequency characteristics of the filter circuit component without receiving the influence of a parasitic inductance and a parasitic capacitance, and to increase the packing density of components, since the ground terminal of the filter circuit component connected to the mounting electrode is connected to the ground electrode through the via conductors at the shortest distance, the occurrence of an unnecessary parasitic inductance and an unnecessary parasitic capacitance is prevented. The filter circuit component is mounted on the high-frequency component to obtain the desired frequency characteristics of the filter circuit component without the influence of a parasitic inductance and a parasitic capacitance.
Murata Manufacturing Co., Ltd.


02/04/16
20160037617 
 Plasma confinement device patent thumbnailnew patent Plasma confinement device
A device and method for the magnetic confinement of plasma is formed by a cylindrically stacked column of current-carrying magnetic field coils with electrodes interior to each magnetic field coil so as to induce plasma fluid rotation about an annular confinement region formed of cusped-geometry magnetic fields. Electrodes are formed such that the electric fields produced are tangential to the magnetic fields, and so as to maintain consistent azimuthal direction of plasma rotation, electric field electrodes alternate accordingly in polarity along the axial length of the device..

02/04/16
20160037266 
 Capacitance type sensor, acoustic sensor, and microphone patent thumbnailnew patent Capacitance type sensor, acoustic sensor, and microphone
A chamber that penetrates vertically is formed in a silicon substrate. A diaphragm is arranged on the upper surface of the silicon substrate so as to cover the upper opening of the chamber.
Omron Corporation


02/04/16
20160037117 
 Solid-state image pickup element and image pickup system patent thumbnailnew patent Solid-state image pickup element and image pickup system
At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode.
Canon Kabushiki Kaisha


02/04/16
20160037116 
 Photoelectric conversion apparatus and photoelectric conversion system patent thumbnailnew patent Photoelectric conversion apparatus and photoelectric conversion system
A photoelectric conversion apparatus including a plurality of photoelectric conversion units each of which includes a first electrode, a second electrode, a photoelectric conversion layer which accumulates signal charges and which is disposed between the first and second electrodes, and an insulating layer disposed between the photoelectric conversion layer and the second electrode, an amplification unit configured to receive optical signals and output signals each based on one of the optical signals, each of the optical signals being based on one of the signal charges, each of the signal charges being accumulated in one of the plurality of photoelectric conversion units, and a capacitive element having a first node and a second node, the first node being connected to the second electrodes of the plurality of photoelectric conversion units and the amplification unit and the second node selectively receiving each one of a plurality of potentials having different values.. .
Canon Kabushiki Kaisha


02/04/16
20160037114 
 Scaling down pixel sizes in image sensors patent thumbnailnew patent Scaling down pixel sizes in image sensors
In various embodiments, methods and related apparatuses for scaling down pixel sizes in quantum film-based image sensors are disclosed. In one embodiment, an image sensor circuit is disclosed that includes circuit includes an optically sensitive layer, a first pixel having a first electrode coupled to a first region of optically sensitive layer, a second pixel having a second electrode coupled to a second region of optically sensitive layer, and a readout circuit having at least one transistor that is shared among the first pixel and the second pixel.

02/04/16
20160037107 
 Imaging device, imaging apparatus, and imaging system patent thumbnailnew patent Imaging device, imaging apparatus, and imaging system
An imaging device includes a substrate, a plurality of pixel electrodes, a conductive line that is disposed between the substrate and the plurality of pixel electrodes, a common electrode portion facing the plurality of pixel electrodes, a plurality of photoelectric conversion portions each of which is disposed between a corresponding one of the plurality of pixel electrodes and the common electrode portion, and a pad portion that is used for supplying an electric potential to the common electrode portion from the outside. The pad portion includes an electroconductive film that is included in the common electrode portion..
Canon Kabushiki Kaisha


02/04/16
20160037099 
 Image sensors with noise reduction patent thumbnailnew patent Image sensors with noise reduction
In various embodiments, image sensors and methods of operating the image sensors are disclosed. In an example embodiment, a pixel circuit having a first electrode is coupled to a reset transistor and to a first region of an optically sensitive layer, and a second electrode is coupled to a pixel sense node and to a second region of an optically sensitive layer.
Invisage Technologies, Inc.


02/04/16
20160037098 
new patent

Image sensors including semiconductor channel patterns


The inventive concepts relate to image sensors. The image sensor includes a substrate including a floating diffusion region and a pixel circuit, an interlayer insulating layer on the substrate, a contact node and a first electrode on the interlayer insulating layer, a dielectric layer on a top surface of the first electrode, a channel semiconductor pattern on the dielectric layer and connected to the contact node, and a photoelectric conversion layer on the channel semiconductor pattern.
Samsung Electronics Co., Ltd.


02/04/16
20160037070 
new patent

Multi-mode power-efficient light and gesture sensing in image sensors


Various embodiments comprise apparatuses and methods including an image sensor. In one example, the image sensor includes a read-out integrated circuit, a plurality of pixel electrodes, an optically sensitive layer, and a top electrical contact.
Invisage Technologies, Inc.


02/04/16
20160037054 
new patent

Solid-state imaging device with autofocus and electronic apparatus


There is provided a solid-state imaging device which includes a focus detection pixel that has a light shielding film, which is formed on a light receiving surface of a photoelectric conversion portion and shields light in a part of the light receiving surface, performs pupil division and photoelectric conversion of a received light flux and acquires a phase difference detection signal, where the light shielding film is formed avoiding a gate electrode of a reading gate portion to read a signal charge from the photoelectric conversion portion.. .
Sony Corporation


02/04/16
20160036433 
new patent

Driving device and switching circuit control method


A driving device includes a switching circuit configured to have switching elements disposed on a high side and a low side, the switching element including a first electrode, a second electrode, and a reverse conducting element disposed between the first electrode and the second electrode; and a determination part configured to determine whether to permit the switching element to turn on, based on a result obtained by detecting a voltage between the first electrode and the second electrode, in a period during which the switching elements on both sides are off.. .
Toyota Jidosha Kabushiki Kaisha


02/04/16
20160036416 
new patent

Elastic wave device with integrated inductor


An elastic wave device includes an interdigital transducer (idt) electrode disposed on an upper surface of a piezoelectric substrate, a wiring electrode disposed on the upper surface of the piezoelectric substrate and connected to the idt electrode, and a first insulator layer disposed on the upper surface of the piezoelectric substrate. The first insulator layer seals the idt electrode and the wiring electrode and includes a first resin and a first filler.
Skyworks Panasonic Filter Solutions Japan Co., Ltd.


02/04/16
20160036414 
new patent

Elastic wave devices


An elastic wave device that can be downsized. Certain examples of the elastic wave device include a substrate, an idt electrode provided above the substrate, a wiring electrode provided above the substrate and connected to the idt electrode, a sealing body sealing an excitation space in which the idt electrode excites an elastic wave, and a sealing wall provided above the wiring electrode and forming a part of the sealing body.
Skyworks Panasonic Filter Solutions Japan Co., Ltd.


02/04/16
20160036412 
new patent

Ultrasonic device and probe as well as electronic apparatus and ultrasonic imaging apparatus


An acoustic matching layer is formed on individual ultrasonic transducer elements on a base. Electric conductors are arranged between adjacent ultrasonic transducer elements, the electric conductors being connected to electrodes of the ultrasonic transducer elements.
Seiko Epson Corporation


02/04/16
20160036410 
new patent

Surface acoustic wave device


A surface acoustic wave device includes, on a substrate, functional electrode units each including at least one idt electrode, wiring electrodes connected to the functional electrode units, insulation films provided between the wiring electrode and the substrate, and a support member that surrounds the functional electrode units and at least a portion of the wiring electrodes. A thickness of the support member is larger than a thickness of the insulation films, and the insulation films and the support member are made of the same material..
Murata Manufacturing Co., Ltd.


02/04/16
20160036355 
new patent

Electrostatic chuck device


Provided is an electrostatic chuck device in which the attachment of particles to the rear surface of a plate-like specimen can be further suppressed by suppressing the generation source of the particles and, furthermore, an effect of cooling the plate-like specimen using a cooling gas can be improved. The electrostatic chuck device is formed by including an electrostatic chuck portion in which an upper surface (2a) of a ceramic plate-like body (2) is used as a placement surface on which a wafer is placed and an electrostatic adsorption electrode is provided inside the ceramic plate-like body (2) or on the rear surface thereof, multiple protrusions (11) are formed on the upper surface (2a), and multiple fine protrusions (13) are formed in regions (12) excluding the multiple protrusions (11) in the upper surface (2a)..
Smitomo Osaka Cement Co., Ltd.


02/04/16
20160036353 
new patent

Increased force generation in electroactive polymers


Methods and systems are provided for combined direct current and alternating current activation of electroactive polymer devices. The combined direct current and alternating current activation may increase force generation compared to activation using direct current alone.
Battelle Memorial Institute


02/04/16
20160036248 
new patent

Parallel monitoring circuit for capacitor


A capacitor charging-discharging system, including a plurality of serially connected capacitors, a voltage source for setting an equalization potential, and a plurality of parallel monitoring circuit. Each parallel monitoring circuit is connected to the two ends electrodes of one capacitor, and includes: a voltage dividing circuit configured to resistively divide and attenuate two voltages respectively on the two end electrodes of the one capacitor, a differential amplifier configured to amplify a difference between the two divided voltages to thereby detecting a charge potential of the one capacitor, a comparator configured to compare the charge potential with the equalization potential, and a charge current bypass circuit configured to control charge current of the one capacitor, based on an output of the comparator, so that the charge potential of the one capacitor matches the equalization potential..
Fuji Electric Co., Ltd.


02/04/16
20160036246 
new patent

Power transmission device and wireless power transmission system


In a stand-by state where a power receiving device is not mounted on a power transmission device, on/off of a switching element that applies an ac voltage to an active electrode and a passive electrode is controlled. A controller detects a potential difference between the active electrode and the passive electrode, and determines that the power receiving device is mounted on the power transmission device when the potential difference has changed.
Murata Manufacturing Co., Ltd.


02/04/16
20160036233 
new patent

Series-parallel conversion power device


A series-parallel conversion device includes n cell series connection units and a plurality of inter-unit connection switches. Each connection unit has n−1 cells and one intra-unit switch.
Samsung Sdi Co. Ltd.


02/04/16
20160036107 
new patent

Lithium-air battery with sodium salt as mediator


A lithium air battery is provided. The battery comprises: an anode compartment; a cathode compartment supplied with an o2 source; and a lithium ion conductive membrane separating the anode compartment from the cathode compartment.
Toyota Motor Engineering & Manufacturing North America, Inc.


02/04/16
20160036093 
new patent

Nonaqueous electrolyte battery and battery pack


According to one embodiment, a nonaqueous electrolyte battery that includes a positive electrode, a negative electrode, and a nonaqueous electrolyte is provided. The positive electrode includes a positive electrode active material.
Kabushiki Kaisha Toshiba


02/04/16
20160036090 
new patent

Nonaqueous electrolyte battery and battery pack


According to one embodiment, a nonaqueous electrolyte battery includes a container, a positive electrode housed in the container, a negative electrode housed in the container, and a nonaqueous electrolyte housed in the container. The positive electrode includes a positive electrode active material represented by a general formula limo2 (m is one or more elements selected from a group consisting of ni, co, and mn).
Kabushiki Kaisha Toshiba


02/04/16
20160036088 
new patent

Power source module


Provided is a power source module which includes: a plurality of energy storage devices stacked in a stacking direction; end plates sandwiching the plurality of energy storage devices therebetween; and a plurality of fastening bars connecting the end plates to each other; wherein the energy storage device includes: a terminal surface on which an electrode terminal is mounted; a bottom surface; and first and second side surfaces. Each of the fastening bars includes an extending portion extending parallel to the stacking direction and fastening portions extending parallel to the end plates.
Gs Yuasa International Ltd.


02/04/16
20160036087 
new patent

Method for manufacturing electrode assembly


Provided is an electrode assembly manufacturing method including a radical unit manufacturing stage in which a radical unit having a four-layer structure is manufactured by sequentially stacking a first electrode, a first separator, a second electrode, and a second separator, and a radical unit stacking stage in which the radical unit as a unit is repeatedly stacked to manufacture an electrode assembly, and whenever a predetermined number of radical units are stacked, the radical units are adhered to each other by heating and pressing an outermost one of the radical units.. .
Lg Chem, Ltd.


02/04/16
20160036085 
new patent

Device for winding electrode plate


A device for winding an electrode plate includes a feed roller configured to guide a first electrode plate or a second electrode plate, each of the first electrode plate and the second electrode plate including a plurality of electrode tabs protruding from one side, a deformation reducing member spaced apart from an outer circumferential surface of one end of the feed roller and configured to guide the electrode tabs fed to the feed roller to be brought into close contact with the outer circumferential surface of the one end of the feed roller to reduce deformation of the electrode tabs, and a winding unit configured to wind together the first electrode plate or the second electrode plate transferred by the feed roller and a separator interposed between the first electrode plate and the second electrode plate.. .
Samsung Sdi Co., Ltd.


02/04/16
20160036083 
new patent

Electroactive cultures and apparatuses therefor


Disclosed herein are methods, systems, and devices for generating electricity from an effluent source. In the presence of electrogenic bacteria and substrate electrodes, an electroactive biofilm is produced which possesses bioconductive capacity for efficiently producing an electric current while treating an effluent source such as, e.g., wastewater.

02/04/16
20160036076 
new patent

Method of operating fuel cell system


An operation method of a fuel cell system includes the step of determining whether or not performance recovery control of a fuel cell stack should be started. This operation method includes the step of, if it is determined that the performance recovery control should be started, supplying water content to a membrane electrode assembly by a water content adjusting device, while maintaining power generation voltage of the fuel cell stack at 0.3 v or lower in a state where an oxygen-containing gas is circulated through a closed circulation channel..
Honda Motor Co., Ltd.


02/04/16
20160036066 
new patent

Metal phthalocyanine polymer and electrode catalyst produced using the same, and producing methods thereof


(wherein m is a divalent or trivalent metal ion belonging to group 3 to group 5 on the long-form periodic table.). .

02/04/16
20160036060 
new patent

Composite electrode for flow battery


A composite electrode adapted for use in a flow battery stack system has a carbon felt stratum forming a semi-porous reaction zone and a carbon foam stratum forming a porous flow path zone. The composite electrode is less compressible than prior art electrodes having similar conductivity and specific surface areas.
Concurrent Technologies Corporation


02/04/16
20160036059 
new patent

Current collector also serving as electrode for battery, and battery including the same


A current collector also serving as an electrode for a battery includes a three-dimensional fiber composite in which a plurality of conductors are disposed in a three-dimensional void of a three-dimensional fiber assembly skeleton, the three-dimensional fiber assembly skeleton being formed by intersecting and assembling a plurality of irregular shaped carbon nano-tubes. An active material that is carried on the carbon nano-tubes or an active material that is carried on the conductors is accommodated in the three-dimensional void inside the three-dimensional fiber composite, and the three-dimensional fiber composite is shaped in a sheet shape..
Honda Motor Co., Ltd.


02/04/16
20160036056 
new patent

Binder composition for rechargeable lithium battery, preparing same, electrode for rechargeable lithium battery and rechargeable lithium battery including same


In chemical formulae 1 and 2, r1 to r3, r11 to r16, and n and m are the same as defined in the detailed description.. .

02/04/16
20160036055 
new patent

Slurry composition for negative electrode for lithium-ion secondary battery, negative electrode for lithium-ion secondary battery, and lithium-ion secondary battery


A slurry composition includes a negative electrode active material, a particulate binder, a water soluble polymer, and water. The particulate binder includes a first particulate binder and a second particulate binder.
Zeon Corporation


02/04/16
20160036053 
new patent

Vanadium solid-salt battery and manufacturing same


There is provided a vanadium solid-salt battery including: a positive electrode and a negative electrode each containing vanadium of which oxidation number in an initial state is trivalent or tetravalent; and a separator which separates the positive electrode from the negative electrode and which allows hydrogen ions to pass therethrough, wherein maximum valence change in initial charging of the vanadium contained in one of the positive and negative electrodes is divalent, and maximum valence change in the initial charging of the vanadium contained in the other of the positive and negative electrodes is monovalent; and mole number of the vanadium of which maximum valence change is monovalent is not less than 1.5 times mole number of the vanadium of which maximum valence change is divalent.. .
Tohoku Techno Arch Co., Ltd.


02/04/16
20160036052 
new patent

Non-aqueous electrolyte secondary battery


The present invention provides a non-aqueous electrolyte secondary battery including a positive electrode, a negative electrode having a negative active material, and a non-aqueous electrolyte, characterized in that the negative active material contains composite particle (c), which has silicon-containing particle (a) and electronic conductive additive (b), the silicon-containing particle (a) has a content of carbon, and when measured at a temperature rising rate of 10±2° c./min by thermogravimetry, said composite particle (c) exhibits two stages of weight loss in the range of 30 to 1000° c.. .
Gs Yuasa International Ltd.


02/04/16
20160036051 
new patent

Lithium secondary battery


The present invention relates to a lithium secondary battery, wherein a peak at 167 to 171 ev and a peak at 162 to 166 ev are present in xps analysis of sulfur (s2p) of a positive electrode surface, and p169/p164 is in the range of 0.7 to 2.0 wherein the p 169/p 164 is the ratio between the intensity of the peak at 167 to 171 ev (p169) and the intensity of the peak at 162 to 166 ev (p164). The present invention can provide a lithium secondary battery having excellent cycle characteristics..
Nec Corporation


02/04/16
20160036050 
new patent

Compositions, layerings, electrodes and methods for making


There is a composition comprising 1 to 17.5 wt. % ionomer composition comprising halogen ionomer and 50 to 99 wt.
E I Du Pont De Nemours And Company


02/04/16
20160036049 
new patent

Lithium ion battery electrode material with composite functional coating


A method of coating electrode material, for a lithium ion battery, that involves chemically grafting an organic layer to the electrode material. The method includes carbonizing the organic layer to form a doped carbon layer chemically bonded to the electrode material.
Hong Kong Applied Science And Technology Research Institute Co., Ltd.


02/04/16
20160036046 
new patent

Lithium ion secondary battery


A lithium ion secondary battery includes a positive electrode that includes a positive electrode active material layer; a negative electrode that includes a negative electrode active material layer; and a nonaqueous electrolyte. The positive electrode active material layer contains an inorganic phosphate compound and a high-potential positive electrode active material that causes an open-circuit voltage to be 4.3 v or higher with respect to lithium metal.
Toyota Jidosha Kabushiki Kaisha


02/04/16
20160036044 
new patent

Positive electrode for non-aqueous electrolyte secondary battery and non-aqueous electrolyte secondary battery using the same


B/(a+b)≧0.05  mathematical formula 2. .

02/04/16
20160036041 
new patent

Positive electrode active substance, positive electrode material, positive electrode, and non-aqueous electrolyte secondary battery


[solving means] disclosed is a positive electrode active substance for a non-aqueous electrolyte secondary battery, in which the true density/tap density of secondary particles of a lithium composite oxide containing nickel as the main component is within the range of 1.6 to 2.3, and in the secondary particles, the average porosity on the center side of the half (r/2 [μm]) of the particle radius (r) of d50 of the secondary particles is larger than the average porosity on the surface side.. .

02/04/16
20160036040 
new patent

Nonaqueous electrolyte battery, battery module, and battery pack


According to one embodiment, there is provided a nonaqueous electrolyte battery including a nonaqueous electrolyte, a positive electrode and a negative electrode. The positive electrode includes a positive electrode current collector containing al, and a positive electrode active material containing layer.
Kabushiki Kaisha Toshiba


02/04/16
20160036039 
new patent

Nonaqueous electrolyte battery and battery pack


According to one embodiment, there is provided a nonaqueous electrolyte battery. The nonaqueous electrolyte battery includes a negative electrode, a positive electrode, and a nonaqueous electrolyte.
Kabushiki Kaisha Toshiba


02/04/16
20160036038 
new patent

Nonaqueous electrolyte battery and battery pack


According to one embodiment, there is provided a nonaqueous electrolyte battery. The nonaqueous electrolyte battery includes a negative electrode, a positive electrode, and a nonaqueous electrolyte.
Kabushiki Kaisha Toshiba


02/04/16
20160036037 
new patent

Batteries prepared by spinning


A method of forming a lithium-ion battery by spinning and a battery formed thereby are disclosed. The spinning may include electrospinning a first anode layer may be spun, followed by a first separator layer, a first cathode layer, and a second separator layer.
Ford Global Technologies, Llc


02/04/16
20160036036 
new patent

Alkali metal oxyanion electrode material having a carbon deposited by pyrolysis and process for making same


An alkali metal oxyanion cathode material comprising particles, where the particles carry, on at least a portion of the particle surface, carbon deposit by pyrolysis is described. The particles have the general formula a: m:m′:x04 where the average valency of m is −2 or greater; a is at least one alkali metal selected from li, na and k; m is at least fe and/or mn; and m′ is a metal of valency of 2+ or more..
Johnson Matthey Public Limited Company


02/04/16
20160036035 
new patent

Carbon containing binderless electrode formation


An anode or negative electrode having a material matrix of carbon, graphene and an active element such as silicon or tin is described. The electrode is fabricated from an electrode slurry that does not utilize an organic binder.
Sinode Systems, Inc.


02/04/16
20160036034 
new patent

Method for injecting electrolyte


A method for injecting an electrolyte includes heating a case in which an electrode assembly is accommodated, and injecting an electrolyte into the case after the heating of the case. Here, the heating of the case may include heating the case through high-frequency induction heating using a coil.
Lg Chem, Ltd.


02/04/16
20160036031 
new patent

Battery cell and battery pack using the same


A battery cell includes a first electrode terminal, a second electrode terminal spaced from the first electrode terminal, and at least one sub terminal coupled to one of the first electrode terminal or the second electrode terminal. The at least one sub terminal includes at least one convex area and at least two concave areas.
Samsung Sdi Co., Ltd.


02/04/16
20160036028 
new patent

Energy storage apparatus


An energy storage apparatus provided with a plurality of energy storage devices arranged in a row in a first direction. The energy storage apparatus includes: a bus bar connected to electrode terminals of at least two energy storage devices out of the plurality of energy storage devices; and a bus bar frame including a pressing portion that is brought into contact with the bus bar from a side opposite to the plurality of energy storage devices.
Gs Yuasa International Ltd.


02/04/16
20160036027 
new patent

Separator for nonaqueous secondary battery, and nonaqueous secondary battery


An object of the invention is to provide a separator for a nonaqueous secondary battery, which has good adhesion to electrodes and is also capable of ensuring sufficient ion permeability even after attachment to electrodes. The separator for a nonaqueous secondary battery of the invention includes a porous substrate and an adhesive porous layer that is formed on at least one side of the porous substrate and contains a polyvinylidene-fluoride-based resin.
Teijin Limited


02/04/16
20160036026 
new patent

Nonaqueous electrolyte battery and battery pack


According to one embodiment, there is provided a nonaqueous electrolyte battery. The nonaqueous electrolyte battery includes a negative electrode, a positive electrode, and a nonaqueous electrolyte.
Kabushiki Kaisha Toshiba


02/04/16
20160036015 
new patent

Rechargeable battery having edge bonding portion


An exemplary embodiment of the present invention provides a rechargeable battery including an electrode assembly for performing charging and discharging operations, and a pouch case including a receiving portion into which the electrode assembly is accommodated and an edge bonding portion formed outside of the receiving portion. The edge bonding portion is formed to be inclined at an angle of 5° to 70° with respect to a bottom surface of the pouch case..
Samsung Sdi Co., Ltd.


02/04/16
20160036014 
new patent

Secondary battery


A secondary battery includes an electrode assembly having a curved shape and comprising a first electrode plate, a second electrode plate, and a separator located between the first electrode plate and the second electrode plate, an exterior member comprising a first exterior member on a first surface of the electrode assembly, a second exterior member on a second surface of the electrode assembly, and wings providing a sealing surface by coupling the first exterior member and the second exterior member, and a label covering an outer surface of the exterior member, wherein the label comprises a label body sheet that is attached to the first exterior member, and a plurality of label wings that are folded from a first edge of the label body sheet in a first direction, cover the exterior member from side surfaces of the exterior member to the second exterior member, and have at least one cutting slot.. .
Samsung Sdi Co., Ltd.


02/04/16
20160036010 
new patent

Nonaqueous electrolyte battery and battery pack


According to one embodiment, a nonaqueous electrolyte battery includes a container, a positive electrode, and a negative electrode. The container satisfies formula (1) of 0.15≦(tmin/tmax)≦1.
Kabushiki Kaisha Toshiba


02/04/16
20160036009 
new patent

Rechargeable battery and manufacturing method thereof


A rechargeable battery and a manufacturing method of the same are provided, which can aid in preventing an electric short from occurring between electrode plates by forming a cutting portion of each on the electrode plates in the shape of a curved surface or a bead having a uniform thickness and/or a diameter sufficient to prevent or substantially prevent the cutting portion from piercing a separator separating the electrode plates from each other. In a present embodiment, the electrode assembly includes an electrode plate having a current collector plate, a coating portion having an electrically active material coated on the current collector plate, a non-coating portion formed at an edge of the current collector plate and not coated with the electrically active material, a cutting portion inwardly formed from the non-coating portion, and a curved portion formed along the cutting portion in a thickness direction of the non-coating portion..
Samsung Sdi Co., Ltd.


02/04/16
20160036006 
new patent

Organic light-emitting module


An organic light-emitting module including a light-transmissive substrate, a light extracting structure, a first electrode, an organic light-emitting stack, a second electrode, and a transparent carrying board is provided. The light-transmissive substrate has an index of refraction greater than 1.5 and has a first surface and a second surface opposite to the first surface.
Industrial Technology Research Institute


02/04/16
20160036004 
new patent

Electroluminescence display device and fabrication method thereof


Embodiments of the disclosure disclose an electroluminescence display device and a fabrication method thereof. The device comprises a color filter substrate.
Boe Technology Group Co., Ltd.


02/04/16
20160035999 
new patent

Gas barrier film, producing gas barrier film, and organic electroluminescent element


An organic electroluminescent element provided with a gas barrier film includes a pair of electrodes and an organic functional layer having at least one light-emitting layer between the electrodes. The gas barrier film includes a base material; a vapor deposition layer that is of a surface-treated silicon compound including at least one element selected from carbon (c), nitrogen (n), and oxygen (o), and has a continuous change in composition from a surface toward a direction of thickness; and a polysilazane modified layer..
Konica Minolta, Inc.


02/04/16
20160035994 
new patent

Organic light emitting device


An organic light emitting device (oled) is provided, may comprise a first organic electroluminescent cell, a second organic electroluminescent cell, a charge generation layer, disposed between the first and second organic electroluminescent cells, a first electrode and a second electrode formed at the first and second organic electroluminescent cells. The first organic electroluminescent cell comprises a fluorescent light emitting layer having a fluorescent emitting element and a phosphorescent light emitting layer having a phosphorescent emitting element.
Industrial Technology Research Institute


02/04/16
20160035980 
new patent

Display panel and manufacturing method thereof, and display device


The invention provides a display panel and a manufacturing method thereof, and a display device, belongs to the field of display device manufacturing technology, which can solve the following problem in the existing display device: when light transmits the cathode layer which is thin, has high resistance and thus poor conductivity, the display effect is nonuniform. The display panel of the invention comprises a first substrate and a second substrate which are assembled, wherein the second substrate is provided with an organic electroluminescent device thereon, an anode layer of the organic electroluminescent device is far away from the first substrate and an cathode layer thereof is close to the first substrate; and the cathode layer is electrically connected to an auxiliary electrode on a light entering surface of the first substrate through a plurality of conductive spacers spaced at certain intervals, wherein the cathode layer is a transparent electrode layer..
Boe Technology Group Co., Ltd.


02/04/16
20160035979 
new patent

Inverse-structure organic light emitting diode and manufacturing method therefor


An organic light emitting diode comprises: a first electrode; an electronic injection layer disposed on the first electrode and containing a metallic oxide; an electronic injection interface layer disposed on the electronic injection layer and including a polymer containing a nitrogen atom; a light emitting layer disposed on the electronic injection interface layer; and a second electrode disposed on the light emitting layer. Accordingly, the electronic injection interface layer is formed between the electronic injection layer and the light emitting layer, so that an element efficiency can be improved, and as the thickness of the electronic injection interface layer becomes thicker, the work function of the electronic injection layer below the electronic injection interface layer increases, and an efficiency of injection of an electron to the light emitting layer is lowered..
Postech Academy - Industry Foundation


02/04/16
20160035977 
new patent

Memory elements using self-aligned phase change material layers and methods of manufacturing same


A memory element and method of forming the same. The memory element includes a first electrode within a via in a first dielectric material.
Micron Technology, Inc.


02/04/16
20160035976 
new patent

Semiconductor memory device and manufacturing the same


Provided are a variable resistance semiconductor memory device which changes its resistance without being affected by an underlying layer and is suitable as a memory device of increased capacity, and a method of manufacturing the same. The semiconductor memory device in the present invention includes: a first contact plug formed inside a first contact hole penetrating through a first interlayer insulating layer; a lower electrode having a flat top surface and is thicker above the first interlayer insulating layer than above the first contact plug; a variable resistance layer; and an upper electrode.
Panasonic Intellectual Property Management Co., Ltd.


02/04/16
20160035975 
new patent

Top electrode for device structures in interconnect


Some embodiments relate to an integrated circuit device. The integrated circuit device includes a resistive random access memory (rram) cell, which includes a top electrode and a bottom electrode that are separated by a rram dielectric layer.
Taiwan Semiconductor Manufacturing Co., Ltd.


02/04/16
20160035974 
new patent

Memory cells and methods of forming memory cells


Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron.
Micron Technology, Inc.


02/04/16
20160035973 
new patent

Directly heated rf phase change switch


An rf switch is provided with a direct heating method. The rf switch is comprised of two rf electrodes disposed on opposing sides of a phase change element.
The Regents Of The University Of Michigan


02/04/16
20160035972 
new patent

Electronic device comprising semiconductor memory using metal electrode and metal compound layer surrounding sidewall of the metal electrode


This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a lower electrode, a variable resistance element over the lower electrode, an upper electrode disposed over the variable resistance element and including metal, and a metal compound layer configured to surround a side of the upper electrode.
Sk Hynix Inc.


02/04/16
20160035967 
new patent

Implantable wireless accoustic stimulators with high energy conversion efficiencies


Receiver-stimulator with folded or rolled up assembly of piezoelectric components, causing the receiver-stimulator to operate with a high degree of isotropy are disclosed. The receiver-stimulator comprises piezoelectric components, rectifier circuitry, and at least two stimulation electrodes.
Ebr Systems, Inc.


02/04/16
20160035966 
new patent

Manufacturing piezoelectric element, manufacturing liquid discharging head, and manufacturing liquid discharging apparatus


A manufacturing method of a piezoelectric element includes forming an adhesive layer of a lead electrode on a piezoelectric element main body of a vibration plate, forming a metallic layer of the lead electrode on the adhesive layer, removing the metallic layer to leave the adhesive layer in a portion that corresponds to an extended electrode of the lead electrode using etching, patterning the remaining adhesive layer as individual extended electrodes that correspond to the piezoelectric element main body using etching, joining a protective substrate onto the vibration plate in a state in which the piezoelectric element main body is accommodated inside an accommodation hollow section and the extended electrode is positioned further on an outer side of the vibration plate than the protective substrate, layering and forming a section of the wiring on the protective substrate and the extended electrode, and patterning the wiring as individual wiring for each extended electrode using etching.. .
Seiko Epson Corporation


02/04/16
20160035962 
new patent

Resonator device, electronic device, and mobile object


A quartz crystal resonator includes a quartz crystal resonator element, a thermistor, and a package base having a first principal surface and a second principal surface having an opposed surface relationship with each other, the quartz crystal resonator element is mounted on the first principal surface side, the thermistor is housed in a recessed section of the second principal surface side of the package base, a plurality of electrode terminals connected to the quartz crystal resonator element or the thermistor is disposed on the second principal surface side of the package base, and a distance in a first direction perpendicular to the first principal surface from a mounting surface of the electrode terminals to the thermistor is equal to or longer than 0.05 mm.. .
Seiko Epson Corporation


02/04/16
20160035961 
new patent

Dielectric element and piezoelectric element


A dielectric element includes a substrate, a first electrode layer on this substrate, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer. The first electrode layer contains lanthanum nickelate.
Panasonic Corporation


02/04/16
20160035960 
new patent

Acoustic resonator and manufacturing the same


An acoustic resonator is provided in which loss of acoustic waves in a transverse direction may be reduced through a cavity formed in an acoustic resonance unit including a first electrode, a piezoelectric layer, and a second electrode, and in which acoustic waves in a longitudinal direction may be reduced by forming an air gap between the acoustic resonance unit and a substrate. Whereby, a quality factor may be improved..
Samsung Electro-mechanics Co., Ltd.


02/04/16
20160035959 
new patent

Manufacturing a piezoelectric layer arrangement and corresponding piezoelectric layer arrangement


A manufacturing method is provided for a piezoelectric layer arrangement and a corresponding piezoelectric layer arrangement. The manufacturing method includes the steps: depositing a first electrode layer on a substrate; depositing a first insulating layer on the first electrode layer; forming a through opening in the first insulating layer to expose the first electrode layer within the through opening; depositing a piezoelectric layer on the first insulating layer and on the first electrode layer within the through opening; back-polishing the resulting structure to form a planar surface, on which a piezoelectric layer area, surrounded by the first insulating layer, is exposed; and depositing and structuring a second electrode layer on the first insulating layer, which contacts the piezoelectric layer area..
Robert Bosch Gmbh


02/04/16
20160035953 
new patent

Light emitting device and manufacturing the same


Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes..
Lg Innotek Co., Ltd.


02/04/16
20160035951 
new patent

Optical semiconductor element mounting package, and optical semiconductor device using the same


An optical semiconductor element mounting package that has good adhesion between the resin molding and the lead electrodes and has excellent reliability is provided, as well as an optical semiconductor device using the package is also provided. The optical semiconductor element mounting package having a recessed part that serves as an optical semiconductor element mounting region, wherein the package is formed by integrating: a resin molding composed of a thermosetting light-reflecting resin composition, which forms at least the side faces of the recessed part; and at least a pair of positive and negative lead electrodes disposed opposite each other so as to form part of the bottom face of the recessed part, and there is no gap at a joint face between the resin molding and the lead electrodes..
Hitachi Chemical Company, Ltd.


02/04/16
20160035945 
new patent

White led chip and manufacture


The present invention discloses a white led chip and method of manufacturing the same. The white led chip includes a flip blue led chip and a preformed conversion layer for light conversion, the method of manufacturing the white led chip includes the steps of preparing for a preformed conversion layer for light conversion, setting up at least one cavity on the conversion layer, for receiving a blue led chip(s), attaching the blue led chip into the cavity; and cutting the conversion layer into a single white led chip based on each cavity that received a blue led chip.
Apt Electronics Ltd.


02/04/16
20160035940 
new patent

Light emitting apparatus, manufacturing light emitting apparatus, light receiving and emitting apparatus, and electronic equipment


A manufacturing method is a method for manufacturing a light emitting apparatus including a translucent substrate, and a light emitting section and an optical filer section that are arranged in a first region of the substrate when viewed in a normal direction of a first surface of the substrate. The manufacturing method includes: forming a dielectric multilayer film over the first region of the substrate; forming a first electrode on the dielectric multilayer film included in the light emitting section; forming a functional layer with a light emitting layer over the first electrode and the dielectric multilayer film included in the optical filter section; and forming a second electrode having semi-transmissive reflectivity on the functional layer over the first region of the substrate..
Seiko Epson Corporation


02/04/16
20160035932 
new patent

Nano-structured light-emitting manufacturing the same


A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized.
Samsung Electronics Co., Ltd.


02/04/16
20160035926 
new patent

Solar cell panel


A solar cell panel is discussed, which includes a plurality of solar cells, each solar cell including a substrate having a first surface and a second surface opposite the first surface, and a plurality of first electrodes extending in a first direction; an interconnector that is positioned in a second direction crossing the plurality of first electrodes and electrically connects adjacent ones of the plurality of solar cells to one another; and a conductive adhesive film including a resin and a plurality of conductive particles dispersed in the resin, the conductive adhesive film being positioned between the plurality of first electrodes and the interconnector in the second direction crossing the plurality of first electrodes to electrically connect the plurality of first electrodes to the interconnector.. .
Lg Electronics Inc.


02/04/16
20160035925 
new patent

Connected structure and manufacture thereof


A method for electrically connecting a surface electrode of a solar battery cell and a wiring member via a conductive adhesive film, wherein the conductive adhesive film contains an insulating adhesive and conductive particles, and wherein when the ten point height of roughness profile and maximum height of the surface of the surface electrode in contact with the conductive adhesive film are rz (μm) and ry (μm) respectively, the average particle diameter r (μm) of the conductive particles is equal to or greater than the ten point height of roughness profile rz, and the thickness t (μm) of the conductive adhesive film is equal to or greater than the maximum height ry.. .
Hitachi Chemical Company, Ltd.


02/04/16
20160035924 
new patent

Configurable backplane interconnecting led tiles


Relatively small, electrically isolated led tiles or pv tiles are fabricated having an anode electrode and a cathode electrode. The led tiles contain microscopic printed leds that are connected in parallel by two conductive layers sandwiching the leds.
Nthdegree Technologies Worldwide Inc.


02/04/16
20160035921 
new patent

Photoelectric conversion apparatus and image pickup system


A photoelectric conversion apparatus includes a photoelectric conversion unit having a light incident surface and including: a first electrode; a second electrode disposed further toward the light incident surface; and a photoelectric conversion layer disposed between the first and second electrodes. The photoelectric conversion apparatus includes a member in contact with the photoelectric conversion layer and constituting a light guide together with the layer.
Canon Kabushiki Kaisha


02/04/16
20160035920 
new patent

Photoelectric conversion device and imaging system


A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit and an amplifier transistor configured to output a signal generated by the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode electrically connected to the amplifier transistor, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode.
Canon Kabushiki Kaisha


02/04/16
20160035916 
new patent

Multifunctional nanostructured metal-rich metal oxides


A transparent conductive oxide (tco) material includes a metal-rich metal oxide having an average formula (m1, m2 . .
The Trustees Of Dartmouth College


02/04/16
20160035907 
new patent

Solar cell module


A solar cell module includes a plurality of solar cells each including a semiconductor substrate and first and second electrode parts each having a different polarity, a plurality of interconnectors for electrically connecting the plurality of solar cells, a conductive adhesive for electrically connecting each of the plurality of interconnectors to the corresponding electrode part of each of the plurality of solar cells, and at least one insulating adhesive portion for temporarily fixing the plurality of interconnectors to the corresponding electrode part. The at least one insulating adhesive portion includes an adhesive having adhesiveness to attach the interconnector to the corresponding electrode part at the room temperature..
Lg Electronics Inc.


02/04/16
20160035905 
new patent

Semiconductor devices


Provided are semiconductor devices. A semiconductor device includes a first well formed in a substrate; an element isolation layer formed on the first well; a second well formed in the first well on a first side of the element isolation layer; a third well formed in the second well, the third well has a higher concentration of impurities than the second well; a first electrode electrically connected to the third well; a fourth well formed in the first well on a second side of the element isolation layer; a fifth well formed in the fourth well, the fifth well has a different conductivity type from the fourth well; a second electrode electrically connected to the fifth well; and a sixth well overlapping the fourth well, the sixth well has a lower concentration of impurities than the fourth well..
Samsung Electronics Co., Ltd.


02/04/16
20160035903 
new patent

Thin-film transistor


Thin-film transistor includes column-shaped protrusion portion having a side surface and protruding from a main surface of the substrate, a gate insulating layer including a first layer and a second layer, at least part of the gate insulating layer being in a channel region extending along the side surface, a gate electrode in contact with the gate insulating layer, a source electrode and a drain electrode isolated from one another, at least part of one of the source electrode and the drain electrode overlap the protrusion portion and the other being in a region that does not overlap the protrusion portion or the one electrode, and a semiconductor layer in contact with at least part of the source electrode, at least part of the drain electrode, and at least part of the gate insulating layer in the channel region directly or with a functional layer interposed.. .
Sumitomo Chemical Company, Limited


02/04/16
20160035902 
new patent

Transistor and display device


It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material.
Semiconductor Energy Laboratory Co., Ltd.


02/04/16
20160035900 
new patent

Thin film transistor substrate and display panel using the same


A thin film transistor includes a gate electrode, a semiconductor layer, a source electrode, a drain electrode, a first protective layer, and a second protective layer. The gate electrode is disposed on a substrate.
Innolux Corporation


02/04/16
20160035896 
new patent

Semiconductor device, manufacturing method thereof, and electronic device


A gate insulating film is formed over an oxide semiconductor film. A gate electrode is formed over the gate insulating film.
Semiconductor Energy Laboratory Co., Ltd.


02/04/16
20160035894 
new patent

Oxide thin film transistor, array substrate, methods of manufacturing the same and display device


An oxide thin film transistor, an array substrate, methods of manufacturing the same and a display device are disclosed. The oxide thin film transistor includes: a base substrate; and a gate electrode, a gate insulating layer, an oxide active layer, drain/source electrodes sequentially disposed on the base substrate.
Boe Technology Group Co., Ltd.


02/04/16
20160035893 
new patent

Pixel structure and manufacturing method thereof


A manufacturing method of a pixel structure is provided, which includes following steps. A gate and a gate insulating layer are formed on a substrate.
Chunghwa Picture Tubes, Ltd.


02/04/16
20160035888 
new patent

Junction fet semiconductor device with dummy mask structures for improved dimension control and forming the same


A method for semiconductor devices on a substrate includes using gate structures which serve as active gate structures in a mosfet region, as dummy gate structures in a jfet region of the device. The dummy gate electrodes are used as masks and determine the spacing between gate regions and source/drain regions, the width of the gate regions, and the spacing between adjacent gate regions according to some embodiments, thereby forming an accurately dimensioned transistor channel..
Taiwan Semiconductor Manufacturing Co., Ltd.


02/04/16
20160035887 
new patent

Semiconductor device and multiple gate field effect transistor


The present invention provides a semiconductor device, which includes a substrate, a first gate electrode, a second gate electrode, a source region and a drain region, wherein the first gate electrode and the second gate electrode are embedded in the substrate respectively; the source region is formed in the substrate, and at least a portion of the source region is disposed between the first gate electrode and the second gate electrode; and the drain region is formed in the substrate, and at least a portion of the drain region is disposed between the first gate electrode and the second gate electrode.. .
Realtek Semiconductor Corp.


02/04/16
20160035879 
new patent

Semiconductor device


In general, according to one embodiment, a semiconductor device includes, a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, a fourth semiconductor region, a fifth semiconductor region, and a gate electrode. The third semiconductor region includes a first portion and a second portion.
Kabushiki Kaisha Toshiba


02/04/16
20160035871 
new patent

Lateral/vertical semiconductor device


A lateral semiconductor device and/or design including a space-charge generating layer and a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel..
Sensor Electronic Technology, Inc.


02/04/16
20160035869 
new patent

Semiconductor device


A semiconductor device formed on a substrate of a first conductivity type, including a base layer of a second conductivity disposed on a first face of the substrate, an anode layer with a higher dopant amount in a portion of the base layer, an igbt region formed on the base layer, a diode region formed on the anode layer, a trench extending from the top of the igbt and diode regions in to the substrate. The area occupied by the diode region is different from the area occupied by the igbt region, but they share collector and emitter electrodes.
Kabushiki Kaisha Toshiba


02/04/16
20160035867 
new patent

Reverse-conducting igbt


A reverse-conducting igbt includes a semiconductor body having a drift region arranged between first and second surfaces. The semiconductor body further includes first collector regions arranged at the second surface and in ohmic contact with a second electrode, backside emitter regions and in ohmic contact with the second electrode.
Infineon Technologies Ag


02/04/16
20160035866 
new patent

Semiconductor device and manufacturing method thereof


An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and electric characteristics are stabilized. Another object is to provide a method for manufacturing the thin film transistor.
Semiconductor Energy Laboratory Co., Ltd.


02/04/16
20160035862 
new patent

Field plate trench transistor and producing it


A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure.
Infineon Technologies Austria Ag


02/04/16
20160035859 
new patent

Igbt and manufacturing the same


An igbt has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face of the trench, and a gate electrode that is arranged inside the trench. When a distribution of a concentration of p-type impurities in the top body region and the floating region, which are located below the emitter region, is viewed along a thickness direction of a semiconductor substrate, the concentration of the p-type impurities decreases as a downward distance increases from an upper end of the top body region that is located below the emitter region, and assumes a local minimum value at a predetermined depth in the floating region..
Toyota Jidosha Kabushiki Kaisha


02/04/16
20160035856 
new patent

Semiconductor structure including a ferroelectric transistor and the formation thereof


An illustrative semiconductor structure described herein includes a substrate including a logic transistor region, a ferroelectric transistor region and an input/output transistor region. A logic transistor is provided at the logic transistor region.
Globalfoundries Inc.


02/04/16
20160035853 
new patent

Semiconductor device


In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion.
Panasonic Intellectual Property Management Co., Ltd.


02/04/16
20160035845 
new patent

Vertical semiconductor device having semiconductor mesas with side walls and a pn-junction extending between the side walls


A vertical semiconductor device includes a semiconductor body having a backside and extending, in a peripheral area and in a vertical direction substantially perpendicular to the backside, from the backside to a first surface of the semiconductor body, the body including in an active area spaced apart semiconductor mesas extending, in the vertical direction, from the first surface to a main surface arranged above the first surface, in a vertical cross-section the peripheral area extending between the active area and an edge that extends between the back-side and the first surface, in the vertical cross-section each of the mesas including first and second side walls, a first pn-junction extending between the first and second side walls, and a conductive region in ohmic contact with the mesa and extending from the main surface into the mesa. Gate electrodes are arranged between adjacent mesas and extend across the first pn-junctions..
Infineon Technologies Ag


02/04/16
20160035844 
new patent

Semiconductor device and manufacturing the same


A semiconductor device with enhanced reliability in which a gate electrode for a trench-gate field effect transistor is formed through a gate insulating film in a trench made in a semiconductor substrate. The upper surface of the gate electrode is in a lower position than the upper surface of the semiconductor substrate in an area adjacent to the trench.
Renesas Electronics Corporation


02/04/16
20160035841 
new patent

Multi-composition gate dielectric field effect transistors


A first gate structure and a second gate structure are formed over a semiconductor material layer. The first gate structure includes a planar silicon-based gate dielectric, a planar high-k gate dielectric, a metallic nitride portion, and a first semiconductor material portion, and the second gate structure includes a silicon-based dielectric material portion and a second semiconductor material portion.
International Business Machines Corporation


02/04/16
20160035840 
new patent

Semiconductor device


According to one embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer provided in a portion on the first semiconductor layer, a first insulating layer provided on the first semiconductor layer on a terminal region side of the second semiconductor layer, a third semiconductor layer provided on the first semiconductor layer on the terminal region side of the first insulating layer, a second insulating layer provided on the first semiconductor layer on the terminal region side of the third semiconductor layer, a fourth semiconductor layer provided between the first semiconductor layer and the second insulating layer, and a plurality of field plate electrodes provided inside an inter-layer insulating film, the plurality of field plate electrodes having mutually-different distances from the first semiconductor layer.. .
Kabushiki Kaisha Toshiba


02/04/16
20160035837 
new patent

Frequency multiplier based on a low dimensional semiconductor structure


A frequency multiplier based on a low dimensional semiconductor structure, including an insulating substrate layer, a semiconductor conducting layer arranged on the surface of the insulating substrate layer, an insulating protective layer arranged on the surface of the semiconductor conducting layer, an insulating carving groove penetrating the semiconductor conducting layer, an inlet electrode arranged on the side surface of the semiconductor conducting layer, and an outlet electrode arranged on the side surface corresponding to the access electrode is provided. The semiconductor conducting layer comprises two two-dimensional, quasi-one-dimensional, or one-dimensional current carrying channels near to and parallel to each other.
South China Normal University


02/04/16
20160035831 
new patent

Channel region dopant control in fin field effect transistor


A dummy gate structure straddling at least one semiconductor fin is formed on a substrate. Active semiconductor regions and raised active semiconductor regions may be formed.
International Business Machines Corporation


02/04/16
20160035830 
new patent

Thin film transistor and display device using the same


A display panel including an oxide thin film transistor is disclosed. In the oxide thin film transistor, a part of the active layer between a source region and a drain region is covered with an etch stopper layer, and the etch stopper layer is partially covered by the first electrode and the second electrode of the oxide thin film transistor.
Lg Display Co., Ltd.


02/04/16
20160035824 
new patent

Semiconductor device, manufacturing the same, and power module


A semiconductor device includes an n-type drain layer, an n-type base layer provided on the n-type drain layer, a p-type base layer and an n-type source layer partially formed in surface layer portions of the n-type base layer and the p-type base layer, respectively, a gate insulation film formed on a surface of the p-type base layer between the n-type source layer and the n-type base layer, a gate electrode formed on the gate insulation film facing the p-type base layer across the gate insulation film, a p-type column layer formed within the n-type base layer to extend from the p-type base layer toward the n-type drain layer, a depletion layer alleviation region arranged between the p-type column layer and the n-type drain layer and including first baryons converted to donors, a source electrode connected to the n-type source layer, and a drain electrode connected to the n-type drain layer.. .
Rohm Co., Ltd.


02/04/16
20160035821 
new patent

Power semiconductor device


A semiconductor device includes an active region and a semiconductor substrate layer having a lower part semiconductor layer of a second conductivity type. The active region includes a drift region formed by at least a part of the substrate layer, a body region of the second conductivity type formed on at least a part of the drift region, a source region of a first conductivity type disposed in the body region, and a first doped region of the first conductivity type at least partially disposed under the body region.
Infineon Technologies Ag


02/04/16
20160035817 
new patent

Process to improve performance for metal-insulator-metal (mim) capacitors


Some embodiments relate to a metal-insulator-metal (mim) capacitor, which includes a capacitor a capacitor bottom metal (cbm) electrode, a high k dielectric layer arranged over the cbm electrode, and a capacitor top metal (ctm) electrode arranged over the high k dielectric layer. In some embodiments, the mim capacitor comprises ctm protective sidewall regions, which extend along vertical sidewall surfaces of the ctm electrode, and protect the ctm electrode from leakage, premature voltage breakdown, or burn out, due to metallic residue or etch damage formed on the sidewalls during one or more etch process(es) used to form the ctm electrode.
Taiwan Semiconductor Manufacturing Co., Ltd.


02/04/16
20160035815 
new patent

Display unit, manufacturing the same, and electronic apparatus


A display unit includes: a display layer including a pixel electrode; a semiconductor layer provided in a layer below the display layer, the semiconductor layer including a wiring layer that includes a material removable by an etchant by which the pixel electrode is also removable; and a terminal section configured to electrically connect the semiconductor layer to an external circuit, the terminal section including a first electrically-conductive layer made of a material same as a material of the wiring layer.. .
Sony Corporation


02/04/16
20160035814 
new patent

Organic light emitting diode display and manufacturing the same


An organic light emitting device includes a switching transistor and a driving transistor. A semiconductor layer is commonly used by the switching and driving transistors.
Samsung Display Co., Ltd.


02/04/16
20160035813 
new patent

Organic light-emitting display apparatus and manufacturing the same


An organic light-emitting display apparatus includes: a substrate; a thin film transistor formed on the substrate; a pixel electrode connected to at least one of the source or drain electrodes; a pixel-defining layer having a first opening exposing at least a portion of the pixel electrode and a second opening adjacent to the first opening; an intermediate layer formed on the pixel electrode, including an organic emission layer, and having a first hole corresponding to the second opening; an opposite electrode formed on the intermediate layer; and first and second auxiliary electrodes formed below the pixel-defining layer, at least portions of the first and second auxiliary electrodes are exposed through the second opening, where ends of the first and second auxiliary electrodes are spaced apart from each other, and where the opposite electrode contacts the ends of the and second first auxiliary electrodes which are exposed through the first hole.. .
Samsung Display Co., Ltd.


02/04/16
20160035810 
new patent

Organic light emitting display


An organic light emitting display can include a substrate, a first capacitor formed on the substrate, the first capacitor including a first capacitor lower electrode, a first capacitor upper electrode, and a gate insulating layer between the first capacitor lower upper electrodes, a first passivation layer over the first capacitor, a second capacitor on the first passivation layer, the second capacitor including a second capacitor lower electrode, a second capacitor upper electrode, and a second passivation layer interposed between the second capacitor lower upper electrodes, an organic insulating layer over the second capacitor, a pixel electrode on the organic insulating layer, an organic layer on the pixel electrode, the organic layer including at least a light emitting layer, and an opposite electrode on the organic layer, and the width of the second capacitor lower electrode is greater than that of the second capacitor upper electrode.. .
Lg Display Co., Ltd.


02/04/16
20160035809 
new patent

Organic light emitting display device


An organic light emitting display device includes a substrate, a first insulating layer, a power supply electrode, a second insulating layer, a first electrode, an emission layer, and a second electrode. The substrate has a display region and a transparent region.
Samsung Display Co., Ltd.


02/04/16
20160035808 
new patent

Organic light emitting display panel and manufacturing the same


Provided are an organic light emitting display panel and a method of manufacturing the same. The organic light emitting display panel includes: a pixel defined by an intersection of one of a plurality of data lines and one of a plurality of gate lines, the pixel including: a transistor, a storage capacitor including: a first electrode, and a second electrode, and a semiconductor layer, a first plate partially overlapping the semiconductor layer in the pixel, the first plate including: a gate portion of the transistor, and a capacitor-forming portion including the first electrode of the storage capacitor, and a second plate on the first plate in the pixel, the second plate including the second electrode of the storage capacitor, the second plate not overlapping the semiconductor layer..
Lg Display Co., Ltd.


02/04/16
20160035807 
new patent

Oled pixel structure and oled display device


The present invention belongs to the technical field of display, and specifically relates to an oled pixel structure and an oled display device. The oled pixel structure comprises a thin film transistor and an oled device, the thin film transistor being provided with a driving electrode for controlling whether the oled device emits light or not, wherein the pixel structure comprises a transmission region and a reflection region in which a reflection layer formed by extending the driving electrode is provided.
Boe Technology Group Co., Ltd.


02/04/16
20160035804 
new patent

Electroluminescence display device and fabrication method thereof


Embodiments of the disclosure disclose an electroluminescence display device and a fabrication method thereof the electroluminescence display device comprises an opposed substrate (20) and an array substrate (10). The array substrate (10) comprises: a first substrate (11), and a thin film transistor (12), a first protective layer (131) and a first connection electrode (141) sequentially disposed on the first substrate (11).
Boe Technology Group Co., Ltd.


02/04/16
20160035803 
new patent

Organic light emitting display device and manufacturing the same


An organic light emitting display device according to an embodiment includes a lower substrate; a bank layer disposed on the lower substrate; a connection assistance unit disposed on the bank layer; a cathode disposed on the lower substrate so as to cover the bank layer; an auxiliary electrode disposed on the bank layer and electrically connected with the cathode; and an upper substrate provided to face the lower substrate.. .
Lg Display Co., Ltd.


02/04/16
20160035802 
new patent

Light-emitting device, array substrate, display device and manufacturing light-emitting device


The present invention discloses a light-emitting device, array substrate, display device and manufacturing method of light-emitting device. The light-emitting device comprises a substrate and a pixel define layer provided on the substrate, the pixel define layer defines at least one pixel unit, each of which comprises a plurality of first electrodes, an organic layer provided on the plurality of first electrodes, and a second electrode provided on the organic layer.
Boe Technology Group Co., Ltd.


02/04/16
20160035800 
new patent

Flexible display substrate and manufacturing the same


Disclosed is a flexible display substrate and a method for manufacturing the same which can avoid break and peeling of film layers disposed on a flexible base and further reduce degree of a warpage occurred in the flexible base when separating the support substrate from the flexible base located above the support substrate. The flexible display substrate comprises the flexible base, a first buffer layer and a second buffer layer disposed on an upper surface and a lower surface of the flexible base, respectively, and a plurality of display modules disposed on the first buffer layer, each display module includes at least one thin film transistor and at least one electrode corresponding to the thin film transistor..
Boe Technology Group Co., Ltd.


02/04/16
20160035796 
new patent

Light-emitting element and display device


There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element.
Semiconductor Energy Laboratory Co., Ltd.


02/04/16
20160035794 
new patent

Photocharge storage element and devices including the same


A photocharge storage element includes a gate insulator formed on a gate electrode, a channel formed on the gate insulator between a source electrode and a drain electrode, and an organic photoelectric conversion element formed on the channel. The organic photoelectric conversion element generates photocharges in response to light.
Dong-a University Research Foundation For Industry-academy Cooperation


02/04/16
20160035790 
new patent

Semiconductor device and producing semiconductor device


The present invention provides a memory structure including a resistance-changing storage element, which enables a reset operation with a reset gate and in which cross-sectional areas of a resistance-changing film and a lower electrode in a current-flowing direction can be decreased. The semiconductor device of the present invention comprises a first pillar-shaped semiconductor layer, a gate insulating film formed around the first pillar-shaped semiconductor layer, a gate electrode made of a metal and formed around the gate insulating film, a gate line made of a metal and connected to the gate electrode, a second gate insulating film formed around an upper portion of the first pillar-shaped semiconductor layer, a first contact made of a second metal and formed around the second gate insulating film, a second contact which is made of a third metal and which connects an upper portion of the first contact to an upper portion of the first pillar-shaped semiconductor layer, a second diffusion layer formed in a lower portion of the first pillar-shaped semiconductor layer, a pillar-shaped insulating layer formed on the second contact, a resistance-changing film formed around an upper portion of the pillar-shaped insulating layer, a lower electrode formed around a lower portion of the pillar-shaped insulating layer and connected to the resistance-changing film, a reset gate insulating film that surrounds the resistance-changing film, and a reset gate that surrounds the reset gate insulating film..
Unisantis Electronics Singapore Pte. Ltd.


02/04/16
20160035781 
new patent

Solid-state imaging device and electronic instrument


A solid-state imaging device including, a first semiconductor region of the first conduction type, a photoelectric conversion part having a second semiconductor region of the second conduction type formed in the region separated by the isolation dielectric region of the first semiconductor region, pixel transistors formed in the first semiconductor region, a floating diffusion region of the second conduction type which is formed in the region separated by the isolation dielectric region of the first semiconductor region, and an electrode formed on the first semiconductor region existing between the floating diffusion region and the isolation dielectric region and is given a prescribed bias voltage.. .
Sony Corporation


02/04/16
20160035780 
new patent

Solid-state image sensing element and imaging system


Each of a plurality of pixels arranged in two dimensions includes a photoelectric conversion unit including a pixel electrode, a photoelectric conversion layer provided above the pixel electrode, and a counter electrode provided so as to sandwich the photoelectric conversion layer between the counter electrode and the pixel electrode, and a microlens arranged above the photoelectric conversion unit. The plurality of pixels includes a first pixel and a plurality of second pixels.
Canon Kabushiki Kaisha


02/04/16
20160035779 
new patent

Imaging apparatus and imaging system


Provided is an imaging apparatus includes: a substrate; a photoelectric conversion unit configured to generate a signal charge by photoelectric conversion; a contact wiring of a conductor electrically connected to the photoelectric conversion unit; a transistor including a control electrode, a first main electrode electrically connected to the contact wiring, and a second main electrode; a charge accumulating unit provided in the substrate and electrically connected to the second main electrode of the transistor; and a first switching unit configured to switch connection and disconnection between the control electrode and the first main electrode of the transistor.. .
Canon Kabushiki Kaisha


02/04/16
20160035777 
new patent

Semiconductor device and manufacturing method


A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.. .
Sony Corporation


02/04/16
20160035773 
new patent

Semiconductor image sensors having channel stop regions and methods of fabricating the same


A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.. .
Samsung Electronics Co., Ltd.


02/04/16
20160035772 
new patent

Imaging device and imaging system


An imaging device includes a plurality of pixels arranged in a pixel region, each of the plurality of pixels including a photoelectric conversion element including a first electrode provided above a substrate, a second electrode provided above the first electrode and a photoelectric conversion layer provided between the first electrode and the second electrode, an interconnection layer provided between the substrate and the first electrode, the interconnection layer including a first conductive member extending in a first direction, and a second conductive member arranged at a level lower than the first conductive member and extending in a second direction intersecting the first direction, a first contact portion provided in the pixel region, the first contact portion electrically connecting the second electrode and the first conductive member, and a second contact portion electrically connecting the first conductive member and the second conductive member.. .
Canon Kabushiki Kaisha


02/04/16
20160035769 
new patent

Imaging apparatus and imaging system


The present invention reduces the leakage of the electric charge, which occurs at an end of a pixel electrode. An imaging apparatus includes: a plurality of pixel electrodes arranged separately from each other; an insulating film arranged on the pixel electrode; a pixel isolating film of an insulating member arranged between the pixel electrodes; and a photoelectric conversion film arranged on the insulating film, wherein the pixel isolating film contacts the pixel electrode..
Canon Kabushiki Kaisha


02/04/16
20160035768 
new patent

Image pickup apparatus, image pickup system, and manufacturing image pickup apparatus


An image pickup apparatus includes a first pixel electrode connected to a pixel circuit, a second pixel electrode adjoining the first pixel electrode and connected to the pixel circuit, a photoelectric conversion film continuously covering the first and second pixel electrodes, and an opposite electrode facing the first and second pixel electrodes via the film. The film includes a recessed portion recessed toward a portion between the first and second pixel electrodes on a surface opposite to the first and second pixel electrodes.
Canon Kabushiki Kaisha


02/04/16
20160035767 
new patent

Photoelectric transducer and imaging system


A photoelectric transducer includes a wiring structure and a photoelectric conversion section provided on a substrate. The photoelectric conversion section includes a first electrode and a photoelectric conversion layer provided on the first electrode.
Canon Kabushiki Kaisha


02/04/16
20160035761 
new patent

Display device and manufacturing the same


A display device including a substrate including a display area and a non-display area, a common electrode line in the non-display area, and a protective layer coating at least a part of an end portion of the common electrode line.. .
Samsung Display Co., Ltd.


02/04/16
20160035760 
new patent

Array substrate and manufacturing the same, and display device


The invention belongs to the field of display technology, and particularly provides an array substrate and a method for manufacturing the same, and a display device. The array substrate includes a base substrate, and a thin film transistor and driving electrodes provided on the base substrate, the thin film transistor includes a gate, a gate insulating layer, an active layer, a source and a drain, the driving electrodes include a slit-shaped electrode and a plate-shaped electrode which are located in different layers and at least partially overlap with each other in the orthographic projection direction, the source, the drain and the active layer are formed so that part of their bottom surfaces are located in the same plane, and a resin layer is further provided between the thin film transistor and the plate-shaped electrode..
Boe Technology Group Co., Ltd.


02/04/16
20160035758 
new patent

Semiconductor device and manufacturing the same


A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer.
Semiconductor Energy Laboratory Co., Ltd.


02/04/16
20160035756 
new patent

Thin film transistor, manufacturing thin film transistor, array substrate, manufacturing array substrate, and display device


The present disclosure relates to the field of display technology, and provides a tft, a method for manufacturing the tft, an array substrate, a method for manufacturing the array substrate, and a display device. The method for manufacturing the tft includes a step of forming a pattern including a source electrode, a drain electrode and an active layer by a single patterning process, wherein the source electrode, the drain electrode and the active layer are arranged at an identical layer, and the active layer is arranged between the source electrode and the drain electrode..
Boe Technology Group Co., Ltd.


02/04/16
20160035754 
new patent

Semiconductor device, manufacturing method thereof, and display apparatus


Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.. .
Samsung Display Co., Ltd.


02/04/16
20160035752 
new patent

Display device and manufacturing the same


A display device and a method of manufacturing the same are disclosed, in which a sensing electrode for sensing a touch of a user is built in a display panel, whereby a separate touch screen is not required on an upper surface of the display panel and thus thickness and manufacturing cost are reduced.. .
Lg Display Co., Ltd.


02/04/16
20160035750 
new patent

Thin film transistor array panel and manufacturing method thereof


A thin film transistor array panel is provided. A thin film transistor is positioned on a substrate.
Samsung Display Co., Ltd.


02/04/16
20160035746 
new patent

Array substrate, manufacturing the same and display device


Disclosed is an array substrate, a method of manufacturing the same, and a display device in use of the array substrate. The array substrate includes a gate electrode layer and a pixel electrode layer on a substrate.
Boe Technology Group Co., Ltd.


02/04/16
20160035745 
new patent

Display substrate and fabricating method thereof, display panel, and display device


The present invention provides a display substrate and a fabricating method thereof, a display panel, and a display device. The display substrate comprises a base substrate, gate lines and data lines formed on the base substrate, and at least one pixel unit defined by the gate lines and the date lines, wherein, each pixel unit comprises a thin film transistor and a pixel electrode, and in each pixel unit, a drain electrode of the thin film transistor is electrically connected with the pixel electrode by at least part of an edge region of at least one side of the drain electrode.
Boe Technology Group Co., Ltd.


02/04/16
20160035741 
new patent

Non-volatile memory device


According to an embodiment, a non-volatile memory device includes first electrodes arranged in a first direction, a second electrode disposed on a side of the first electrodes in the first direction, a semiconductor layer extending in the first direction through the first electrodes and the second electrode, and a memory film provided between the semiconductor layer and each of the first electrodes. The semiconductor layer includes crystal grains and has a first portion and a second portion, the first portion being adjacent to the first electrodes, and the second portion being adjacent to at least a part of the second electrode, wherein the first portion includes a larger crystal grain than a crystal grain in the second portion..
Kabushiki Kaisha Toshiba


02/04/16
20160035740 
new patent

Non-volatile memory device and manufacturing same


According to an embodiment, a non-volatile memory device includes electrodes, an inter-layer insulating film between the electrodes and at least one semiconductor layer extending through the electrodes and the inter-layer insulating film. The device includes a charge storage layer between the semiconductor layer and each electrode, a first insulating film between the charge storage layer and the semiconductor layer, and a second insulating film.
Kabushiki Kaisha Toshiba


02/04/16
20160035739 
new patent

Semiconductor device and a manufacturing method thereof


The performances of a semiconductor device are improved. The semiconductor device has a first control gate electrode and a second control gate electrode spaced along the gate length direction, a first cap insulation film formed over the first control gate electrode, and a second cap insulation film formed over the second control gate electrode.
Renesas Electronics Corporation


02/04/16
20160035734 
new patent

Method for manufacturing a semiconductor device


The performances of a semiconductor device are improved. In a method for manufacturing a semiconductor device, in a memory cell region, a control gate electrode formed of a first conductive film is formed over the main surface of a semiconductor substrate.
Renesas Electronics Corporation


02/04/16
20160035730 
new patent

Semiconductor device


A semiconductor device according to this invention includes a support film that supports a lower electrode of a capacitor at an upper portion, and the support film includes a first insulating material having a stress within a range of +700 mpa to −700 mpa. Use of such a support film prevents a phenomenon in which the capacitor lower electrode is twisted.
Ps4 Luxco S.a.r.l.


02/04/16
20160035726 
new patent

Fin sidewall removal to enlarge epitaxial source/drain volume


A finfet device includes a dielectric layer formed over a semiconductor substrate and having an upper dielectric layer surface. A fin of semiconductor material extends upwards from the substrate through an opening in the dielectric layer.
Taiwan Semiconductor Manufacturing Co., Ltd.


02/04/16
20160035725 
new patent

Tungsten gates for non-planar transistors


The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar nmos transistors, wherein an nmos work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar nmos transistor gate..
Intel Corporation


02/04/16
20160035724 
new patent

Tungsten gates for non-planar transistors


The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar nmos transistors, wherein an nmos work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar nmos transistor gate..
Intel Corporation


02/04/16
20160035719 
new patent

Semiconductor device and manufacturing the same


Both a hemt and a sbd are formed on a nitride semiconductor substrate. The nitride semiconductor substrate comprises a hemt gate structure region and an anode electrode region.
Toyota Jidosha Kabushiki Kaisha


02/04/16
20160035710 
new patent

Light-emitting device and lighting device provided with the same


A light-emitting device capable of ensuring an electric connection between a light-emitting element and an electrode without generating any problem in practical use, by both connecting methods with a solder and a connector, and a lighting device provided with the light-emitting device are provided. The light-emitting device according to the present invention has a plurality of led chips, and a soldering electrode land and a connector connecting electrode land electrically connected to the chips, on a ceramic substrate.
Sharp Kabushiki Kaisha


02/04/16
20160035705 
new patent

Semiconductor device and manufacturing method therefor


A chip laminate in this semiconductor device has a structure consisting of a first semiconductor chip and a second semiconductor chip laminated together. The first semiconductor chip has a circuit-forming layer and a first bump electrode formed on one surface and a second bump electrode formed on the other surface.
Ps4 Luxco S.a.r.l.


02/04/16
20160035697 
new patent

Miniaturized smd diode package and process for producing the same


A process for producing a miniaturized smd diode package involves using a diode chip whose bottom surface has a positive electrode and a negative electrode, using a circuit board instead of a conventional lead frame during packaging, and using charge-coupled device (ccd) image registration technology to perform chip bonding; the beneficial advantages brought from the process for producing the same including to simplify producing process and reduce manufacturing cost, to improve accuracy and precision of producing the miniaturized smd diode package due to using a circuit board instead of conventionally used lead frame, and to ensure the produced miniaturized smd diode package possesses excellent diode characteristics without distortion or defect.. .
Sfi Electronics Technology Inc.


02/04/16
20160035695 
new patent

Method of manufacturing semiconductor device


A semiconductor device includes a common wire that sequentially connects three or more pads; bonding portions at which a side surface of the wire is bonded to the pads; and looping portions looped from the bonding portions onto the other pads adjacent to the pads, the bonding portions and the looping portions are formed alternately. When the pads are recessed from the surface of semiconductor chips, the common wire is crushed to a thickness greater than the recess depth of the pads to be made into a flat shape.
Shinkawa Ltd.


02/04/16
20160035685 
new patent

Tin alloy electroplating solution for solder bumps including perfluoroalkyl surfactant


Disclosed is a tin-based electroplating solution for forming solder bumps of a flip chip package. The tin-based electroplating solution includes tin methanesulfonate, silver methanesulfonate, methanesulfonic acid, a fluorinated surfactant, an aromatic polyoxyalkylene ether, and water.
Apct Co., Ltd


02/04/16
20160035683 
new patent

Semiconductor device


A highly reliable semiconductor device capable of heavy current conduction and high temperature operation has a module structure in which a semiconductor chip and a circuit pattern are electrically connected via a wire. A front surface metal film is formed on a front surface electrode of the chip, and the wire is bonded to the front surface metal film by wire bonding.
Fuji Electric Co., Ltd.


02/04/16
20160035674 
new patent

Autobahn interconnect in ic with multiple conduction lanes


A topological insulator is grown on an ic wafer in a vacuum chamber as a thin film interconnect between two circuits in the ic communicating with each other. As the ti is being grown, magnetic doping of the various ti sub-layers is varied to create different edge states in the stack of sub-layers.
The Board Of Trustees Of The Leland Stanford Junior University


02/04/16
20160035655 
new patent

Semiconductor package having etched foil capacitor integrated into leadframe


A packaged semiconductor device including a leadframe and a plurality of angularly shaped capacitors. The leadframe includes structures with surfaces and sidewalls.
Texas Instruments Incorporated


02/04/16
20160035647 
new patent

Semiconductor device having heat dissipation structure and laminate of semiconductor devices


A semiconductor device includes a semiconductor substrate, an electrode arranged on a first surface of the semiconductor substrate, a circuit formed on a second surface, of the semiconductor substrate, on an opposite side from the first surface, a conductor connecting the circuit and the electrode, a first lead arranged on an outer periphery of the semiconductor substrate, a connection member connecting the electrode and the first lead, and a sealing material sealing the semiconductor substrate, the first lead, and the connection member, where the second surface of the semiconductor substrate is exposed from the sealing material.. .
Panasonic Corporation


02/04/16
20160035637 
new patent

Semiconductor device and manufacturing semiconductor device


A semiconductor device includes: a substrate; a semiconductor element disposed on the substrate; a plurality of electrodes disposed on the substrate separately from one another and arranged so as to surround the semiconductor element in a plan view; a lid that cover the semiconductor element, the lid including an inner portion and a periphery portion that is outer than the inner portion in a plan view, the lid including a plurality of first protruding members that is provided separately from one another, the first protruding members being disposed in the inner portion; and conductive members disposed between the plurality of electrodes and the plurality of protruding members disposed in positions opposed to the plurality of electrodes respectively, the conductive members being joined to the plurality of electrodes and the plurality of protruding members respectively.. .
Socionext Inc.


02/04/16
20160035627 
new patent

High performance cmos device design


A semiconductor device includes a gate, which comprises a gate electrode and a gate dielectric underlying the gate electrode, a spacer formed on a sidewall of the gate electrode and the gate dielectric, a buffer layer having a first portion underlying the gate dielectric and the spacer and a second portion adjacent the spacer wherein the top surface of the second portion of the buffer layer is recessed below the top surface of the first portion of the buffer layer, and a source/drain region substantially aligned with the spacer. The buffer layer preferably has a greater lattice constant than an underlying semiconductor substrate.
Taiwan Semiconductor Manufacturing Company, Ltd.


02/04/16
20160035611 
new patent

Carrier wafer, holding a flexible substrate and the manufacture of a carrier wafer


Carrier wafers are used to hold thin and ultra-thin substrates such as semiconductor components, for example. The carrier wafer of the invention has a plurality of electrodes insulated on all sides (floating electrodes).
Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.


02/04/16
20160035610 
new patent

Electrostatic chuck assemblies having recessed support surfaces, semiconductor fabricating apparatuses having the same, and plasma treatment methods using the same


An electrostatic chuck apparatus includes a base and a dielectric layer on the base. The dielectric layer includes a support surface opposite the base and a clamping electrode laterally extending along the support surface.

02/04/16
20160035573 
new patent

Array substrate, display device, and manufacturing array substrate


An array substrate is provided, wherein a pixel electrode has the same material as a source/drain and has a thickness less than that of the source/drain, or a common electrode has the same material as a gate and has a thickness less than that of the gate, which guarantees transmittance of the array substrate while reducing the process complexity. A display device and a manufacturing method of the array substrate are also provided..
Boe Technology Group Co., Ltd.


02/04/16
20160035567 
new patent

Semiconductor device


A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween.
Semiconductor Energy Laboratory Co., Ltd.


02/04/16
20160035556 
new patent

Ion funnel for efficient transmission of low mass-to-charge ratio ions with reduced gas flow at the exit


A sample inlet device and methods for use of the sample inlet device are described that include an ion funnel having a plurality of electrodes with apertures arranged about an axis extending from an inlet of the ion funnel to an outlet of the ion funnel, the ion funnel including a plurality of spacer elements disposed coaxially with the plurality of electrodes, each of the plurality of spacer elements being positioned between one or two adjacent electrodes, each of the plurality of spacer elements having an aperture with a diameter that is greater than a diameter of each adjacent electrode. The ion funnel is configured to pass an ion sample through the apertures of the electrodes and the spacer elements to additional portions of a detection system, such as to a mass analyzer system and detector..
Smiths Detection Inc.


02/04/16
20160035555 
new patent

Ion trap mass analyzer apparatus, methods, and systems utilizing one or more multiple potential ion guide (mpig) electrodes


In one aspect of the invention, an ion trap mass analyzer includes a variable- or multi-potential type ion guide (mpig) assembly which has been pre-configured to produce a parabolic-type potential field. Each mpig electrode has a resistive coating of designed characteristics.
University Of Northern Iowa Research Foundation


02/04/16
20160035537 
new patent

Charged particle beam specimen inspection operation thereof


A charged particle beam specimen inspection system is described. The system includes an emitter for emitting at least one charged particle beam, a specimen support table configured for supporting the specimen, an objective lens for focusing the at least one charged particle beam, a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam, and a flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening..
Applied Materials Israel, Ltd.


02/04/16
20160035529 
new patent

Combined surge protection device with integrated spark gap


With the combined surge protection device having another connector in the region of the auxiliary fuse element that can be contacted at substantially the same potential to the first main electrode, so that, in the case of overloading, an electric arc forms between the auxiliary fuse element and the other connector, which leads to the triggering of the fuse.. .

02/04/16
20160035519 
new patent

Vacuum valve


A coil electrode has a ring section provided on a plane perpendicular to the axis line of fixed-side and movable-side electrode rods on which the coil electrodes are mounted and concentrically with the axis line, a plurality of arm sections extended outward from the outer circumference of the ring section, circular-arc-shaped coil sections that are formed in such a way as to be bent in the circumferential direction from the respective front ends of the arm sections, and slits that separate the coil sections; the arm section of the coil electrode and the arm section of the coil electrode are arranged in the same direction so as to be superimposed on each other when viewed along the axis direction of the fixe-side electrode rod and the movable-side electrode rod.. .
Mitsubishi Electric Corporation


02/04/16
20160035513 
new patent

Mems switches with reduced switching voltage and methods of manufacture


Mems switches and methods of manufacturing mems switches is provided. The mems switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode..
International Business Machines Corporation


02/04/16
20160035512 
new patent

Mems switches with reduced switching voltage and methods of manufacture


Mems switches and methods of manufacturing mems switches is provided. The mems switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode..
International Business Machines Corporation


02/04/16
20160035511 
new patent

Mems switches with reduced switching voltage and methods of manufacture


Mems switches and methods of manufacturing mems switches is provided. The mems switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode..
International Business Machines Corporation


02/04/16
20160035510 
new patent

Mems switches with reduced switching voltage and methods of manufacture


Mems switches and methods of manufacturing mems switches is provided. The mems switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode..
International Business Machines Corporation


02/04/16
20160035501 
new patent

Power switchgear


Disclosed is a power switch gear that includes: a fixed electrode and a movable electrode disposed opposite to each other in a tank filled with insulting gas; and a movable conductor electrically connecting the fixed electrode and the movable electrode together. The fixed electrode and the movable electrode have a contactor through which current flows to the movable conductor.
Hitachi, Ltd.


02/04/16
20160035500 
new patent

Ionic electron conductive polymer capacitor


Technologies are generally described for an electron conductive polymer capacitor may incorporate a conductive polymer mixture embedded with carbon nanoparticles between electrodes to rapidly charge and store large amounts of charge compared to conventional electrolytic capacitors. Such a capacitor may be constructed with a laminate sheet including layers of inner and outer electrodes, an electrolyte mixture between the electrodes, a conductive polymer mixture, and a composite mixture of carbon nanoparticles embedded in the conductive polymer between the inner electrodes.
Empire Technology Development Llc


02/04/16
20160035498 
new patent

Electricity storage device and electrode material therefor


An electrode material for electricity storage devices includes: an active material including at least one of quinone having a halogen group and hydroquinone having a halogen group; and a porous body supporting the active material.. .
Tohoku University


02/04/16
20160035493 
new patent

Multilayered structure, capacitor element, and fabrication the capacitor element


The capacitor element (20) including the multilayered structure includes: a substrate (10); a buffer layer (12) disposed on the substrate (10); a lower electrode (14) disposed on the buffer layer (12), and a dielectric layer (16) disposed on the lower electrode (14), the dielectric layer composed of nitrides. Furthermore, the capacitor element includes: an upper electrode (18) disposed on the dielectric layer (16), a first terminal electrode connected to the lower electrode (14), and a second terminal electrode connected to the upper electrode (18).
Rohm Co., Ltd.


02/04/16
20160035491 
new patent

Multilayer ceramic capacitor and board having the same


A multilayer ceramic capacitor may include: a ceramic body including a plurality of dielectric layers and having first and second end surfaces, third and fourth side surfaces, and upper and lower surfaces; a first unit disposed in the ceramic body and including first internal electrodes exposed to the first and second end surfaces of the ceramic body in the length direction and second internal electrodes having lead portions exposed to the third and fourth side surfaces of the ceramic body in the width direction; a second unit disposed in the ceramic body and including a plurality of first internal electrodes; and first and second external electrodes disposed on the first and second end surfaces of the ceramic body in the length direction, respectively, and fourth external electrodes disposed on the third and fourth side surfaces of the ceramic body in the width direction, respectively.. .
Samsung Electro-mechanics Co., Ltd.


02/04/16
20160035489 
new patent

Multi-layered aluminum oxide capacitor


The present invention relates to a multi-layered aluminum oxide capacitor comprising an aluminum substrate; a plurality of aluminum oxide layer formed in at least a portion of on both sides or one side of the substrate with respect to the aluminum substrate; and a plurality of electrode layers formed on the aluminum oxide layers. According to the present invention, manufacturing process is more simplified since al2o3 insulation layer is formed by anodizing the aluminum layer without forming an extra insulation layer after forming the aluminum layer, so that the manufacturing cost can be reduced, and also a multi-layered capacitor having a high capacitance and a high reliability can be provided by stacking capacitors comprising a plurality of aluminum oxide layers using a more simplified process according to the present invention..
Point Engineering Co., Ltd.


02/04/16
20160035482 
new patent

Coil component and electronic device equipped with the same


A coil component includes: a pillar part; first and second rectangular planar parts, each having long sides l, short sides s, and thickness t; a coil formed around the pillar part; two terminal electrodes electrically connected to both ends of the coil; and an outer sheath containing magnetic grains and resin material and covering the coil at least partially; wherein the thickness pl in the l direction and thickness ps in the s direction, of the outer sheath, in a section cut across the center of the pillar part and in parallel with the ls planes, satisfy the relationship of pl<ps.. .
Taiyo Yuden Co., Ltd.


02/04/16
20160035476 
new patent

Coil component, manufacturing the same, and electronic device


A coil component includes an air-core coil embedded in a magnetic body constituted by resin and metal magnetic grains. Both ends of the coil are exposed on the surface of the magnetic body, and the side on which both ends are exposed is polished and etched to form terminal electrodes.
Taiyo Yuden Co., Ltd.


02/04/16
20160035468 
new patent

Positive temperature coefficient device


A ptc device comprises two electrode layers and a ptc material layer laminated therebetween. The ptc material layer has a volumetric resistivity less than 0.2 Ω-cm, and comprises a crystalline polymer, conductive ceramic fillers and crystalline low molecular weight organic compound.
Polytronics Technology Corp.


02/04/16
20160035466 
new patent

Electrode component with pretreated layers


An electrode component with pretreated layers includes a ceramic substrate, two pretreated layers formed on two opposite surfaces of the ceramic substrate, two electrode layers respectively formed on the two pretreated layers, two pins respectively connected to the electrode layers, and an insulating layer enclosing the ceramic substrate, the pretreated layers, the electrode layers, and portions of the two pins. The pretreated layer formed between the ceramic substrate and the electrode layer replaces the fabrication means for conventional silver electrode layer to provide good binding strength between the ceramic substrate and the electrode layer.
Thinking Electronic Industrial Co., Ltd.


02/04/16
20160035457 
new patent

Field effect transistor


There is provided a field effect transistor which comprises a gate insulating layer, a gate electrode, a semiconductor layer, a source electrode and a drain electrode. The gate insulating layer contains an organic compound that contains a silicon-carbon bond and a metal compound that contains a bond between a metal atom and an oxygen atom; and the metal atoms are contained in the gate insulating layer in an amount of 10 to 180 parts by weight with respect to 100 parts by weight of the total of carbon atoms and silicon atoms.
Toray Industries, Inc.


02/04/16
20160035452 
new patent

Aluminum electrode, forming an aluminum electrode and electronic device therewith


The present disclosure relates to an aluminum electrode, a method of forming an aluminum electrode and an electronic device therewith. An aluminum electrode according to one aspect of the present disclosure comprises: a bottom layer consisting of molybdenum; a top layer consisting of molybdenum; and an aluminum layer located between the bottom layer and the top layer, wherein the bottom layer, the top layer and the aluminum layer are formed at a temperature below 120° c.
Boe Technology Group Co., Ltd.


02/04/16
20160035418 
new patent

Memory device architecture


Row electrode drivers and column electrode drivers for a memory device are distributed within a footprint share by a memory cell array.. .
Micron Technology, Inc.


02/04/16
20160035415 
new patent

Non-volatile memory using bi-directional resistive elements


A memory cell includes a single bi-directional resistive memory element (brme) having a first terminal directly connected to a first power rail and a second terminal coupled to an internal node; and a first transistor having a control electrode coupled to the internal node, and a first current electrode coupled to a first bitline, and a second current electrode coupled to one of a group consisting of: a read wordline and the first power rail.. .
Freescale Semiconductor, Inc.


02/04/16
20160035377 
new patent

Spin-valve element, hard disk head, and hard disk head assembly


According to one embodiment, a spin-valve element includes a nonmagnetic unit, a first magnetic unit, a second magnetic unit, a third magnetic unit, a current source, and a voltage sensor. The current source is connected to the second magnetic unit and the third magnetic unit.
Kabushiki Kaisha Toshiba


02/04/16
20160035322 
new patent

Liquid crystal display device and driving method thereof


Provided is an ffs mode liquid crystal display device capable of preventing the occurrence of flicker when the frame frequency is reduced to 30 to 1 hz from the conventional frame frequency of 60 hz in order to reduce the power consumption. In the ffs mode liquid crystal display device, a comb-shaped second electrode is placed on a planar first electrode through an insulating film.
Japan Display Inc.


02/04/16
20160035295 
new patent

Level shift circuit, electro-optical apparatus, and electronic equipment


To realize a level shift circuit with the small occupation area and capable of performing high-speed operation, a level shift circuit includes an electric potential converting unit that converts a first electric potential of an input signal to a third electric potential and converts a second electric potential of an input signal to a fourth electric potential. A capacitor includes first and second electrodes, the first electrode being electrically connected to the input unit, and the second electrode being electrically connected to an output node of the electric potential converting unit.
Seiko Epson Corporation


02/04/16
20160035294 
new patent

Display device


A display device includes a first substrate; a plurality of gate lines arranged in a row direction on the first substrate; a plurality of data lines arranged in a column direction intersecting the row direction; and a plurality of pixels formed in a plurality of pixel areas defined by the gate and data lines, the plurality of pixels comprising at least a first pixel and a second pixel repectively disposed in a first pixel area and a second pixel area that are immediately adjacent to each other. Each of the first and second pixels comprises a thin film transistor electrically connected to the gate and data lines, and a pixel electrode electrically connected to the thin film transistor.
Samsung Display Co., Ltd.


02/04/16
20160035290 
new patent

Smartphone


A smartphone includes: a cover layer; a display module, and comprises a component configured to cause the lcd panel to perform a display function; a pressure electrode which is located under the display module; and a shielding member which is located under the pressure electrode. At least a portion of a touch sensor which senses touch in a capacitive manner is located in the display module..
Hideep Inc.


02/04/16
20160035283 
new patent

Display device


A display device includes dummy pixels adjacent to active pixels, and a controller to control pixel driving circuits in the active pixels and dummy driving circuits in the dummy pixels. The dummy driving circuit includes a pumping capacitor, and first and second transistors to connect an initialization voltage terminal to a dummy anode terminal.
Samsung Display Co., Ltd.


02/04/16
20160035278 
new patent

Display device and electronic equipment


A display device including: a pixel array section; power supply lines; and auxiliary electrodes, wherein each pixel has an auxiliary capacitance, and one of electrodes of the auxiliary capacitance is connected to the source electrode of the drive transistor, and another electrode is connected to the auxiliary electrode for the pixel.. .
Sony Corporation


02/04/16
20160035274 
new patent

Display device and manufacturing the same


A display device includes a substrate including a display area and a non-display area, and a common electrode line at the non-display area of the substrate. The common electrode line may include a line unit and a plurality of protrusions that protrude from the line unit in a direction opposite from the display area..
Samsung Display Co., Ltd.




Electrode topics: Phosphoric Acid, Internal Combustion Engine, Carbon Atoms, Porous Carbon, Double Layer Capacitor, Graphene Oxide, Aqueous Solution, Lithium Ion, Exhaust Gas, Soot Sensor, Combustion, Calibration, Electronic Apparatus, Electrical Signal, Electric Conversion

Follow us on Twitter
twitter icon@FreshPatents

###

This listing is a sample listing of patent applications related to Electrode for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Electrode with additional patents listed. Browse our RSS directory or Search for other possible listings.


3.082

9398

1 - 1 - 206