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Electrode patents



      

This page is updated frequently with new Electrode-related patent applications.




Date/App# patent app List of recent Electrode-related patents
05/19/16
20160143150 
 Method of manufacturing a flexible printed circuit board including a solder resist layer patent thumbnailMethod of manufacturing a flexible printed circuit board including a solder resist layer
A method for manufacturing a flexible printed circuit module includes discharging an insulating material from an inkjet head towards a surface of a flexible printed circuit board, such that an electrode on the surface of the flexible printed circuit board is exposed, and curing the insulating material to be formed.. .
Kabushiki Kaisha Toshiba


05/19/16
20160143147 
 Electronic device module and  manufacturing the same patent thumbnailElectronic device module and manufacturing the same
The electronic device module and method thereof includes a board, an electronic device, a sealing part, and a connection conductor. The board includes external connection electrodes.
Samsung Electro-mechanics Co., Ltd.


05/19/16
20160143145 
 Electrical device patent thumbnailElectrical device
An electrical device comprising: a substrate; an electrical circuit formed on the substrate; an electrical component mounted on the substrate; solder physically and electrically joining the electrical circuit and the electrical component; wherein the electrical component comprises an outer electrode comprising (i) 100 parts by weight of a conductive powder comprising a copper-nickel-zinc (cu—ni—zn) alloy powder, and (ii) 1 to 40 parts by weight of an organic polymer.. .
E I Du Pont De Nemours And Company


05/19/16
20160143142 
 Element embedded printed circuit board and  manufacturing the same patent thumbnailElement embedded printed circuit board and manufacturing the same
An element embedded printed circuit board includes: a substrate including an insulation layer, a first circuit layer formed on a first surface of the insulation layer, and a second circuit layer formed on a second surface of the insulation layer; and an element including an electrode part and embedded in the insulation layer, wherein the electrode part is in contact with the first circuit layer.. .
Samsung Electro-mechanics Co., Ltd.


05/19/16
20160143124 
 High current cyclotron patent thumbnailHigh current cyclotron
Cyclotron for accelerating charged particles around an axis, comprising an electromagnet with an upper pole and a lower pole, producing a magnetic field in the direction of said axis; a dee electrode assembly and a counter dee electrode assembly separated from each other by a gap for accelerating said charged particles and a pair of ion sources located in a central region of the cyclotron. Said ion sources are located at a distance of said axis such that the particles emitted from the first ion source pass between said first and second ion sources after a path of half a turn, and radially outwards of the second ion source after a path of three half-turns, and reciprocally..
Ion Beam Applications S.a.


05/19/16
20160143123 
 Method and apparatus to identify functional issues of a neutron radiation generator patent thumbnailMethod and apparatus to identify functional issues of a neutron radiation generator
Systems, methods, and apparatuses to identify functional issues of a neutron radiation generator are described. In certain aspects, a method includes receiving an operation extractor signal from an extractor electrode of a radiation generator, determining a calculated extractor signal of the radiation generator, and comparing the operation extractor signal to the calculated extractor signal.
Schlumberger Technology Corporation


05/19/16
20160143112 
 Electronic control of oleds with distributed electrodes patent thumbnailElectronic control of oleds with distributed electrodes
At least one sensor (200), the sensor (200) being adapted to measure data being relevant for the brightness distribution of the organic light emitting device (1), and the controller (110) being adapted to adapt the electrical parameters based on the data measured by the sensor (200). The invention further describes a corresponding method of controlling the brightness distribution of an organic light emitting device (1) and a method of driving the organic light emitting device (1).

05/19/16
20160143091 
 Heated underbody warming systems with electrosurgical grounding patent thumbnailHeated underbody warming systems with electrosurgical grounding
Embodiments include a heated underbody support with electrosurgical grounding, such as a heated mattress, heated mattress overlay, or heated pad for supporting a person. The heated underbody support may include a flexible heating element formed of a sheet of conductive or semi-conductive material, a first bus bar along a first edge of the heating element adapted to receive a supply of electrical power, a second bus bar extending along the second edge of the heating element, and a temperature sensor.
Augustine Temperature Management Llc


05/19/16
20160142831 
 Binaural cochlear implant processing patent thumbnailBinaural cochlear implant processing
A sound processing arrangement is described for a patient with a bilateral cochlear implant system having implanted electrode arrays in each ear. There is a left-side sensing microphone and a right-side sensing microphone, each configured for sensing the sound environment surrounding the patient and generating corresponding microphone signals.
Med-el Elektromedizinische Geraete Gmbh


05/19/16
20160142529 
 Mobile communication device patent thumbnailMobile communication device
A mobile communication device includes: a first sound transceiver including a first lower electrode, a first upper electrode, and a first vibration plate between the first lower electrode and the first upper electrode; a second sound transceiver including a second lower electrode, a second upper electrode, and a second vibration plate between the second lower electrode and the second upper electrode; a position sensor configured to perform a detection of a relative positional relationship between the first and second sound transceivers; and a controller configured to apply a sound signal to one of the first and second sound transceivers and detect a sound signal from the other one thereof, based on the detection result provided from the position sensor.. .
Samsung Display Co., Ltd.


05/19/16
20160142106 

Portable device including means for transmitting data by inductive coupling and intracorporeal current


The present invention relates to a device for transmitting data by intracorporeal current comprising a first electrode intended to be capacitively coupled with the body of a subject or with the environment, and a circuit for biasing the first electrode comprising an electric coil arranged near the first electrode so as to generate, from an ac signal, an alternating magnetic field having field lines which interfere with the first electrode and therein induce currents which, in turn, induce an electric field generating intracorporeal current.. .
Inside Secure


05/19/16
20160142041 

Acoustic wave device, transceiver device, and mobile communication device


An acoustic wave device includes: an acoustic wave chip including an acoustic wave element formed therein; a multilayered substrate including the acoustic wave chip mounted on an upper surface thereof; a first ground terminal formed on a lower surface of the multilayered substrate and electrically coupled to a ground electrode of the acoustic wave chip; a second ground terminal formed on the lower surface; a signal terminal formed on the lower surface and electrically coupled to a signal electrode of the acoustic wave chip; and a shield layer formed at least on the upper surface, on the lower surface, or between the lower surface and the upper surface of the multilayered substrate so as to overlap with at least a part of the acoustic wave chip, not electrically coupled to the first ground terminal in the multilayered substrate, and electrically coupled to the second ground terminal.. .
Taiyo Yuden Co., Ltd.


05/19/16
20160142040 

Demultiplexing apparatus


An elastic wave filter includes a transmission circuit provided on a first main surface of a first piezoelectric substrate and a reception circuit provided on a second main surface of a second piezoelectric substrate. A mounting board on which the elastic wave filter is mounted includes a first ground electrode opposed to the transmission circuit; a first rear surface ground electrode overlapped with the transmission circuit in plan view of a rear surface; a second ground electrode opposed to the reception circuit; a second rear surface ground electrode overlapped with the reception circuit in plan view of the rear surface; a line electrode used for connection between the first ground electrode and the second ground electrode; and a first via electrode and a second via electrode passing through the mounting board.
Murata Manufacturing Co., Ltd.


05/19/16
20160142039 

Contour-mode piezoelectric micromechanical resonators


A contour mode micromechanical piezoelectric resonator. The resonator has a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom electrode and the top electrode.
The Regents Of The University Of California


05/19/16
20160142038 

Piezoelectric thin film resonator, filter, and duplexer


A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and an insertion film inserted in the piezoelectric film, located in at least a part of an outer peripheral region within a resonance region where the lower electrode and the upper electrode face each other across the piezoelectric film, and not located in a center region of the resonance region, wherein a difference between a total film thickness of the piezoelectric film and the insertion film in a first region, in which the insertion film is inserted, within the resonance region and a film thickness of the piezoelectric film in a second region, in which the insertion film is not inserted, is less than a film thickness of the insertion film.. .
Taiyo Yuden Co., Ltd.


05/19/16
20160141943 

Method and station for the construction of a stator winding with rigid bars for a rotary electrical machine


Method and station for the construction of a stator winding with rigid bars for a rotary electrical machine; an insulated wire of electrically conductor material and provided on the outside with an insulating layer is unwound from a coil; a final end of the insulated wire is bent in a “u” shape so as to create a bar having two legs connected to one another by a cusp; the insulated wire is transversely cut to separate the rigid bar from the remaining part of the wire; and the bar is inserted into a stator slot of a magnetic core of a stator; furthermore, the electrical conductivity is measured between the core and the outer surface of the insulated wire by means of a first electrode electrically and permanently connected to the core of the insulated wire and a second electrode, which rubs against the outer surface of the insulated wire.. .
Magneti Marelli S.p.a.


05/19/16
20160141858 

Method for producing a multiplicity of surge arresters in an assembly, surge arrester and surge arrester assembly


A method is provided for manufacturing a plurality of arresters as a composite structure. A ceramic carrier having a plurality of holes and two electrode bodies are provided.
Epcos Ag


05/19/16
20160141856 

Mushroom-shaped high voltage electrode


A high voltage electrode arrangement includes a dome-shaped top portion, a toroid-shaped bottom portion, and an intermediate portion for connecting the top portion and the bottom portion. The intermediate portion includes a lead-trough for receiving high voltage equipment to be interconnected..
Abb Technology Ltd.


05/19/16
20160141842 

Method of manufacturing an ignition plug


A method for producing a spark plug for internal combustion engines, having a metallic shell, a ceramic insulator held in the shell, a center electrode embedded in the insulator, and a ground electrode implemented as a bridge attached to the front end of the shell, wherein an end piece made of a precious metal is attached to the front end of the center electrode and a counterpart is attached to the bridge opposite the end piece, between which is formed a spark gap. A cylindrical body made fully or partially of the precious metal or precious metal alloy intended for the end piece and that is longer than the end piece is welded onto the front end of the center electrode.
Federal-mogul Ignition Gmbh


05/19/16
20160141841 

Corona ignition system for an internal combustion engine


A corona ignition system is described for igniting fuel in a combustion chamber of an internal combustion engine, with a resonant circuit, which contains an ignition electrode, a high frequency generator connected to the resonant circuit, in order to generate an ac voltage for exciting the resonant circuit, and a direct current voltage source, in order to generate an input voltage for the high frequency generator. According to this disclosure, provision is made that parallel to the direct current voltage source a capacitor is connected to the high frequency generator, which capacitor on transient oscillation of the resonant circuit compensates mismatches between the resonant circuit and the direct current voltage source..
Borgwarner Ludwigsburg Gmbh


05/19/16
20160141840 

Spark plug


A spark plug (1) includes an insulator (2) having an axial hole (4), a center electrode (5) inserted into the axial hole (4), a metallic shell (3) provided around the insulator (2), a ground electrode (27) whose base end portion is fixed to the metallic shell (3) and which has an annular portion (27a) formed at a forward end portion thereof, the center electrode (5) being disposed radially inward of the annular portion (27a), and an annular tip (32) which is joined to the inner circumference of the annular portion (27a) and which forms a spark discharge gap (28) between the center electrode (5) and the inner circumferential surface of the annular tip (32). Recesses (35) are provided on at least one of the inner and outer circumferences of the annular portion (27a)..
Ngk Spark Plug Co., Ltd.


05/19/16
20160141835 

Layer arrangement and fabricating thereof


According to various embodiments, there is provided a layer arrangement including a graphene layer; a gating electrode layer configured to provide a tuning voltage to the graphene layer; a laser layer configured to provide an electromagnetic wave; and a concentric-circular grating layer configured to couple the electromagnetic wave to the graphene layer.. .
Nanyang Technological University


05/19/16
20160141830 

To-type optical element package for high-speed communication


A to-type optical element package for high-speed communication which is used for an optical module for high-speed communication of at least 10 gigabits per sec (gbps) and enables thermoelectric elements to be embedded in an upper part of a stem. The to-type optical element package for high-speed communication can transmit high-quality signals in a high-speed operation of the optical element by inserting and fixing an electrode pin (120) in a through-hole formed on a stem base (100), surrounding a lateral surface of the electrode pin (120) protruding to an upper part of the stem base (100), with a metallic instrument (400) having a through-hole so as to enable the impedance of an electrode pin (120) part, surrounded with the stem base (100), to correspond to the impedance of an electrode pin (120) part protruding to the upper part of the stem base (100)..
Phovel.co.ltd.


05/19/16
20160141795 

Systems and leads with a radially segmented electrode array and methods of manufacture


A method of making a lead for a stimulation device includes forming at least one pre-electrode in the shape of a ring, the at least one pre-electrode comprises at least two thin-walled portions separated by at least two thick-walled portions; disposing the at least one pre-electrode near a distal end of a lead body; joining at least one conductor to each thick-walled portion of the at least one pre-electrode; and grinding the lead body and the at least one pre-electrode to remove the thin-walled portions of the at least one pre-electrode to form segmented electrodes from the thick-walled portions of the at least one pre-electrode.. .
Boston Scientific Neuromodulation Corporation


05/19/16
20160141736 

Electrochemical device and manufacturing the same


Disclosed are an electrochemical device and a method for manufacturing the same. The electrochemical device includes an electrode assembly that is formed in such a manner that a first electrode, a separator, and a second electrode are wound in the form of a jelly-roll shape, and includes a hollow portion in a center thereof, a first tap plate that is installed on an upper surface of the electrode assembly to be electrically connected to the first electrode, and includes a first through-hole corresponding to the hollow portion in a center thereof, and a second tap plate that is installed on a lower surface of the electrode assembly to be electrically connected to the second electrode, and includes a second through-hole corresponding to the hollow portion in a center thereof..
Orange Power Ltd.


05/19/16
20160141727 

Electrolytes and metal hydride batteries


A metal hydride battery comprising at least one negative electrode, at least one positive electrode, a casing having said electrodes positioned therein and an electrolyte composition, where the electrolyte composition comprises an ionic compound selected from the group consisting of protic acids, protic ammonium compounds, protic oxonium compounds, aprotic ammonium compounds, aprotic oxonium compounds, aprotic phosphonium compounds and alkali or alkali earth metal salts; or where the electrolyte composition comprises an ionic compound selected from the group consisting of alkali or alkali earth metal hydroxides and alkali or alkali earth metal alkoxides and an organic solvent; or where the electrolyte composition comprises an alkali metal hydroxide, water and one or more further components selected from the group consisting of organic solvents, further ionic compounds and additives; or where the electrolyte composition comprises an ionic compound selected from the group consisting of carboxylate compounds and carboxylic acids. Ionic compounds include ionic liquids and salts.
Basf Corporation


05/19/16
20160141726 

Electrolytes and metal hydride batteries


A metal hydride battery comprising at least one negative electrode, at least one positive electrode, a casing having said electrodes positioned therein and an electrolyte composition, where the electrolyte composition comprises an ionic compound selected from the group consisting of protic acids, protic ammonium compounds, protic oxonium compounds, aprotic ammonium compounds, aprotic oxonium compounds, aprotic phosphonium compounds and alkali or alkali earth metal salts; or where the electrolyte composition comprises an ionic compound selected from the group consisting of alkali or alkali earth metal hydroxides and alkali or alkali earth metal alkoxides and an organic solvent; or where the electrolyte composition comprises an alkali metal hydroxide, water and one or more further components selected from the group consisting of organic solvents, further ionic compounds and additives; or where the electrolyte composition comprises an ionic compound selected from the group consisting of carboxylate compounds and carboxylic acids. Ionic compounds include ionic liquids and salts.
Basf Corporation


05/19/16
20160141725 

Electrolytes and metal hydride batteries


A metal hydride battery comprising at least one negative electrode, at least one positive electrode, a casing having said electrodes positioned therein and an electrolyte composition, where the electrolyte composition comprises an ionic compound selected from the group consisting of protic acids, protic ammonium compounds, protic oxonium compounds, aprotic ammonium compounds, aprotic oxonium compounds, aprotic phosphonium compounds and alkali or alkali earth metal salts; or where the electrolyte composition comprises an ionic compound selected from the group consisting of alkali or alkali earth metal hydroxides and alkali or alkali earth metal alkoxides and an organic solvent; or where the electrolyte composition comprises an alkali metal hydroxide, water and one or more further components selected from the group consisting of organic solvents, further ionic compounds and additives; or where the electrolyte composition comprises an ionic compound selected from the group consisting of carboxylate compounds and carboxylic acids. Ionic compounds include ionic liquids and salts.
Basf Corporation


05/19/16
20160141724 

Electrolytes and metal hydride batteries


A metal hydride battery comprising at least one negative electrode, at least one positive electrode, a casing having said electrodes positioned therein and an electrolyte composition, where the electrolyte composition comprises an ionic compound selected from the group consisting of protic acids, protic ammonium compounds, protic oxonium compounds, aprotic ammonium compounds, aprotic oxonium compounds, aprotic phosphonium compounds and alkali or alkali earth metal salts; or where the electrolyte composition comprises an ionic compound selected from the group consisting of alkali or alkali earth metal hydroxides and alkali or alkali earth metal alkoxides and an organic solvent; or where the electrolyte composition comprises an alkali metal hydroxide, water and one or more further components selected from the group consisting of organic solvents, further ionic compounds and additives; or where the electrolyte composition comprises an ionic compound selected from the group consisting of carboxylate compounds and carboxylic acids. Ionic compounds include ionic liquids and salts.
Basf Corporation


05/19/16
20160141721 

Secondary battery and electrode production method


Secondary battery includes a battery assembly configured by alternately stacking positive electrodes 1 and negative electrodes 6 via separators 20, in which the positive electrode and the negative electrode respectively include collectors 3 and 8, and active materials 2 and 7 applied on the collectors. On each surface of the collector, a coated portion coated with the active material and an uncoated portion not coated with any active material are provided.
Nec Energy Devices, Ltd.


05/19/16
20160141716 

All-solid-state secondary battery and manufacturing same


An all-solid-state secondary battery, including: a solid electrolyte layer; a positive electrode layer including a positive electrode active material layer and a first current collector layer; a negative electrode layer including a second current collector layer, the positive electrode layer and the negative electrode layer sandwiching the solid electrolyte layer; and external electrodes connected respectively to the first current collector layer and the second current collector layer, wherein the positive electrode active material layer is formed of an olivine-type active material, wherein the solid electrolyte layer is formed of a phosphate having a nasicon-type structure, and wherein the solid electrolyte layer contains particulate precipitate having an olivine-type crystal structure that includes a same element as an element forming the positive electrode active material layer.. .
Taiyo Yuden Co., Ltd.


05/19/16
20160141715 

Method for producing electrode for lithium ion batteries


A binder layer formation step of forming a binder layer of which an initial sticking strength of a surface is 1 or more on a current collector; a sticking step of sticking a powder having an angle of repose of 45° or less onto the surface of the binder layer by bringing the powder into contact with the surface; and a compression step of compressing the powder stuck in the sticking step into a predetermined density are included.. .
Toyota Jidosha Kabushiki Kaisha


05/19/16
20160141711 

Method of manufacturing rechargeable battery with curved surface


A method of manufacturing a rechargeable battery with a curved surface is disclosed. In one aspect, the method includes winding a plurality of electrodes and a separator together so as to form an electrode assembly, wherein the electrode assembly has first and second sides and two lateral ends connected to each other by the first and second sides, and wherein the first side is longer than the second side.
Samsung Sdi Co., Ltd.


05/19/16
20160141710 

Mandrel for spiral-winding electrode


The mandrel that is configured to wind an electrode of a rechargeable battery includes: a first reel and a second reel with a gap therebetween, wherein the first reel includes a gap surface facing the second reel, a first front surface and a second front surface that are connected by the gap surface, and a first inclined surface and a second inclined surface that connect the first front surface and the second front surface, wherein the first inclined surface is longer than the second inclined surface.. .

05/19/16
20160141709 

Method of manufacturing secondary battery and secondary battery manufactured by the method


A method of manufacturing a secondary battery and a secondary battery manufactured by the method are disclosed. In one aspect, the method includes providing an electrode assembly including first and second electrode plates, wherein the first electrode plate includes a plurality of first multi-tabs outwardly extending from an end thereof, and wherein the second electrode plate includes a plurality of second multi-tabs outwardly extending from an end thereof.
Samsung Sdi Co., Ltd.


05/19/16
20160141698 

Redox flow battery


A redox flow battery includes a charge/discharge cell (11), a first tank (23) for storing a positive-electrode electrolyte (22), and a second tank (33) for storing a negative-electrode electrolyte (32). The positive-electrode electrolyte (22) contains, for example, an iron redox-based substance and citric acid.
Nissin Electric Co., Ltd.


05/19/16
20160141697 

Redox flow battery


The present invention relates to a redox flow battery, and is to provide a redox flow battery having high battery potential and high energy efficiency and providing a stable charge-discharge performance. The present invention provides a redox flow battery including: a stack arranged to separate a negative electrode unit and a positive electrode unit with respect to a separator; pumps configured to supply electrolytes including polythiophene to the stack; and tanks storing the polythiophene..
Korea Institute Of Energy Research


05/19/16
20160141696 

Electrolyte solution and producing same, continuously dissolving facility, electrolyte membrane, electrode catalyst layer, membrane electrode assembly and fuel cell


A method for producing an electrolyte solution including a supply step of continuously supplying an emulsion based a polymer electrolyte and a solvent into a dissolution facility, and a dissolution step of continuously dissolving the polymer electrolyte in the solvent by heating the interior of the dissolution facility to obtain the electrolyte solution.. .
Daikin Industries, Ltd.


05/19/16
20160141695 

Membrane electrode assembly and fuel cell


An object is to prevent an increase in overall thickness of a membrane electrode assembly. There is provided a membrane electrode assembly.
Toyota Jidosha Kabushiki Kaisha


05/19/16
20160141686 

Fuel cell system


The present invention provides a fuel cell system capable of suppressing the accumulation of impurities in a hydrogen system even when a hydrogen pump stops. A fuel cell system 100 includes a hydrogen pump 4, which is provided in a hydrogen gas circulation flow path 3 and which circulates a hydrogen off-gas discharged from the outlet side of a hydrogen electrode 1a of a fuel cell 1 to the inlet side of the hydrogen electrode 1a, a discharge valve 61, through which the hydrogen off-gas flowing in the hydrogen gas circulation flow path 3 is discharged out of the hydrogen gas circulation flow path 3, a determination section 81, which determines whether the hydrogen pump 4 is stopped, and a control unit 80, which controls the opening/closing of the discharge valve 61.
Toyota Jidosha Kabushiki Kaisha


05/19/16
20160141639 

Fuel cell


In a fuel cell, a cathode passage extends from an oxidizing gas supply hole to an oxidizing gas discharge hole. A turn interval at which a flow direction of an oxidizing gas returns to an original direction in an upstream-side passage region is different from the turn interval in a downstream-side passage region.
Toyota Jidosha Kabushiki Kaisha


05/19/16
20160141636 

Separator for fuel cell, fuel cell, and manufacturing separator


A separator for a fuel cell, to be disposed opposing to a membrane electrode assembly, is provided. The separator includes a separator central area portion opposing to a center area of the membrane electrode assembly that concerns generating power, an outer edge portion located in an outer edge of the separator central area portion, a rubber molded body made of rubber, the rubber molded body being formed in the outer edge portion by die-casting a die-casting rubber material using die, and an adhesive layer formed in the outer edge portion, for adhering the rubber molded body to the outer edge portion.
Sumitomo Riko Company Limited


05/19/16
20160141633 

Fuel cell stack


The fuel cell stack formed by arranging a terminal on both ends of a cell stacked body in which a plurality of cells including a membrane electrode assembly and separators interposing the membrane electrode assembly therebetween is stacked, includes a rust preventive plate which is arranged between a metal separator and a positive electrode terminal on a high potential side of the cell stacked body, and includes a material more noble than that of the separator in the surface.. .

05/19/16
20160141631 

Catalyst layer, membrane electrode assembly, and electrochemical cell


A method of manufacturing a membrane electrode assembly, including: forming a catalyst layer precursor containing a mixture of a catalyst material and a pore-forming material on a substrate having a flatness of 60% or more; removing the pore-forming material from the catalyst layer precursor on the substrate, thereby forming a catalyst layer containing the catalyst material and having a porosity of 20 to 90% by volume; transferring the catalyst layer from the substrate to a gas diffusion layer, to provide an electrode; and bonding the catalyst layer of the electrode to an electrolyte membrane, to provide a membrane electrode assembly.. .
Kabushiki Kaisha Toshiba


05/19/16
20160141629 

Gas diffusion electrode and process for making same


Disclosed is a process for making a gas diffusion electrode that comprises an electrically conductive substrate, a gas diffusion layer (gdl) and an active layer (al). The process comprises forming the gdl and/or the al by pressing and/or rolling a mass obtained by subjecting electrically conductive carbon material and polymeric binder and, in the case of the al, electroactive catalyst to high energy mixing in a liquid medium, followed by the separation of solid matter from the liquid medium and, optionally, drying of the separated solid matter..
Gencell Ltd.


05/19/16
20160141628 

Nonaqueous electrolyte secondary battery and manufacturing the same


A nonaqueous electrolyte secondary battery includes: a negative electrode current collector foil; and a negative electrode mixture layer that is arranged on the negative electrode current collector foil. The negative electrode mixture layer contains a plurality of granulated particles.
Toyota Jidosha Kabushiki Kaisha


05/19/16
20160141627 

Positive electrode for rechargeable lithium battery and rechargeable lithium battery including same


A positive electrode for a rechargeable lithium battery includes a positive active material and a binder including polyvinylidene fluoride, a carboxyl group-containing polyvinylidene fluoride, and poly(vinylidenefluoride-tetrafluoroethylene). The positive electrode may have an improved binding force and increased flexibility.
Samsung Sdi Co., Ltd.


05/19/16
20160141626 

Negative electrode for lithium ion secondary battery, and lithium ion secondary battery using the same


A negative electrode for a lithium ion secondary battery, which has high energy density and which can suppress a crease (form change) of a negative electrode active material layer and a negative electrode current collector caused by the expansion and contraction occurring along with the quick charging and discharging and also suppress the falloff of the negative electrode active material layer after the quick charging and discharging cycle, and a lithium ion secondary battery using the negative electrode. The negative electrode for a lithium ion secondary battery and the lithium ion secondary battery include: a negative electrode active material including 5% or more of silicon or silicon oxide; a binder that is polyacrylate whose carboxylic groups at terminals of side chains of polyacrylic acid are cross-linked with magnesium or alkaline earth metal; and a negative electrode current collector..
Tdk Corporation


05/19/16
20160141625 

Coating agent composition for battery electrodes or separator


A coating agent composition for battery electrode or separator, comprises a vinyl alcohol copolymer having a structural unit represented by the general formula (1), and an aqueous emulsion of a synthetic resin obtained by polymerizing a copolymerizable monomer having an acrylic monomer as a main component, or an aqueous emulsion of a styrene thermoplastic elastomer.. .
The Nippon Synthetic Chemical Industry Co., Ltd.


05/19/16
20160141624 

Negative electrode slurry composition, and negative electrode and lithium battery including the negative electrode slurry composition


A negative electrode slurry composition includes a negative active material, a binder, and a dispersant. The dispersant includes a polyacrylic acid (paa) having a weight average molecular weight (mw) greater than 10 and less than 10,000.
Samsung Sdi Co., Ltd.


05/19/16
20160141623 

Bipolar electrode, bipolar all-solid battery manufactured by using the same, and manufacturing method thereof


Disclsoed are a bipolar electrode, a bipolar all-solid battery manufactured by using the same, and a manufacturing method thereof. The bipolar electrode includes: a solid electrolyte; an anode slurry and a cathode slurry, each of which is provided on a first surface and a second surface of the solid electrolyte; spacers provided in the anode slurry and the cathode slurry; and a metal substrate provided in the anode slurry and the cathode slurry.
Hyundai Motor Company


05/19/16
20160141622 

Battery


The present invention relates to a battery that includes at least one electrochemical cell. The at least one electrochemical cell includes a first electrode, a second electrode, a first electroactive material, a second electroactive material, and an electrolyte which is in contact with both electrodes, and at least one of the first electroactive material and the second electroactive material includes a radialene compound.
Novaled Gmbh


05/19/16
20160141621 

Power storage device electrode, manufacturing same, and power storage device including same


For achievement of a power storage device electrode having a high capacity density and a high energy density, a method of manufacturing the same and a power storage device including the same, there is provided a power storage device electrode serving as at least one of a positive electrode and a negative electrode which constitute a power storage device. The power storage device electrode contains an active material including: (a) an electrically conductive polymer; and (b) an anthraquinone compound having at least two amino groups and a structure represented by formula (1) below..
Nitto Denko Corporation


05/19/16
20160141614 

Negative active material for secondary battery, negative electrode and lithium battery each including negative active material, and preparing negative active material


Provided is a negative active material for a secondary battery which provides high capacity, high efficiency charging-discharging characteristics. The negative active material includes: a silicon single phase; and a silicon-metal alloy phase interfaced with the silicon single phase and surrounding the silicon single phase, wherein an x-ray diffraction spectrum of the negative active material has first and second peaks that are originated from the silicon-metal alloy phase, and the first peak is located at 49.1+/−0.5 degrees (°) and the second peak is located at 38.0+/−0.5 degrees (°), and a diffraction intensity of the first peak is 2 or less times that of to the second peak..
Snu R&db Foundation, Seoul National University


05/19/16
20160141613 

Negative electrode active material for electric device and electric device using same


(in the chemical formula (1), m is at least one metal selected from the group consisting of ti, zn, c, and combinations thereof, a is unavoidable impurities, x, y, z, and a represent % by mass values, and in that case, 0<x<100, 0<y<100, 0<z<100, 0≦a<0.5, and x+y+z+a=100), in which the half width of the diffraction peak of the (111) surface of si in the range of 2θ=24 to 33° by x ray diffraction measurement of the alloy using the cukα ray is 0.7° or more.. .

05/19/16
20160141611 

Use of novel compounds as negative electrode active material in a sodium-ion battery


Precursor compounds of sodium alloy(s), for use as negative electrode active material in a sodium-ion battery, as well as to a negative electrode have the precursor compound of sodium alloy(s), as well as a sodium-ion battery having a negative electrode of this kind.. .
Universite Montpellier Ii Sciences Et Techniques


05/19/16
20160141609 

Aluminum silicate composite, electroconductive material, electroconductive material for lithium ion secondary battery, composition for forming negative electrode for lithium ion secondary battery, composition for forming positive electrode for lithium ion secondary battery, negative electrode for lithium ion secondary battery, positive electrode for lithium ion secondary battery, and lithium ion secondary battery, composition for forming positive


An aluminum silicate complex that comprises an aluminum silicate and carbon that is disposed on a surface of the aluminum silicate.. .
Hitachi Chemical Company, Ltd.


05/19/16
20160141605 

Transition metal hydroxy-anion electrode materials for lithium-ion battery cathodes


A transition metal hydroxy-anion electrode material for lithium-ion battery cathodes includes the charge-neutral structure mx(oh)n(xo4)m, where m is one or more transition metals, x is the total number of transition metal atoms, x is sulfur or phosphorus, and x, n, and m are integers. The polyanion material has a nanostructured morphology.

05/19/16
20160141604 

Surface treated silicon containing active materials for electrochemical cells


Provided are active materials for electrochemical cells. The active materials include silicon containing structures and treatment layers covering at least some surface of these structures.
Nexeon Limited


05/19/16
20160141602 

Surface modifications for electrode compositions and their methods of making


Compositions and methods of making are provided for surface modified electrodes and batteries comprising the same. The compositions may comprise a base composition having an active material capable of intercalating the metal ions during a discharge cycle and deintercalating the metal ions during a charge cycle, wherein the active material is selected from the group consisting of licoo2, limn2o4, li2mno3, linio2, limn1.5ni0.5o4, lifepo4, li2fepo4f, li3conimno6, li(lianixmnycoz)o2, liamn1.5-bni0.5-cmdo4-x, and mixtures thereof.
Ut-battelle, Llc


05/19/16
20160141601 

High energy materials for a battery and methods for making and use


A method of forming an electrode active material by reacting a metal fluoride and a reactant. The method includes a coating step and a comparatively low temperature annealing step.
Wildcat Discovery Technologies, Inc.


05/19/16
20160141600 

Method of producing negative electrode material for non-aqueous electrolyte secondary battery, negative electrode material for non-aqueous electrolyte secondary battery, negative electrode for non-aqueous electrolyte secondary battery, and lithium-ion secondary battery


Where r is a rotation rate (rpm) of the furnace tube of the rotary kiln, w is a mass (kg/h) of the particles that are put in the furnace tube per hour, and t is an inner diameter (m) of the furnace tube. This method can not only efficiently produce a negative electrode material that is coated with a uniform carbon coating and crystallinity, but also mass-produce negative electrode materials having a high capacity and a high cycle performance..

05/19/16
20160141599 

Rotary tubular furnace, producing negative electrode active material for non-aqueous electrolyte secondary battery, negative electrode active material for non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery


The invention provides a rotary tubular furnace including a rotatable furnace tube having an inlet end through which silicon compound particles (siox where 0.5≦x<1.6) are put therein and an outlet end through which the particles coated with carbon are taken out therefrom; and a heating chamber having a heater to heat the furnace tube, wherein the furnace tube is composed of a heat portion inside the heating chamber and a non-heat portion outside the heating chamber, a length b of the heat portion and an overall length a of the furnace tube satisfy 0.4≦b/a<1, and a distance c between the heat portion and the outlet end and the overall length a satisfy 0.04≦c/a≦0.35. This furnace can inhibit clogging of the furnace tube and mass-produce a negative electrode active material for a non-aqueous electrolyte secondary battery having a high capacity with inhibited variations in the amount of carbon coating and crystallinity..
Shin-etsu Chemical Co., Ltd.


05/19/16
20160141598 

Methods for making a solid electrolyte interface layer on a surface of an electrode


In an example of the method for making a solid electrolyte interface (sei) layer on a surface of an electrode, the electrode is exposed to an electrolyte solution in an electrochemical cell. The electrolyte solution includes either i) an organo-polysulfide additive having a formula rsnr′ (n>2), wherein r and r′ are independently selected from a methyl group, an unsaturated chain, a 3-(trimethoxysilyl)-1-propyl group, or a 4-nitrophenyl group, or ii) a fluorinated organo-polysulfide additive having a formula rsnr′ (n>2), wherein r and r′ can be the same or different, and wherein r and r′ each have a general formula of cxhyf(2x−y+1), where x is at least 1 and y ranges from 0 to 2x.
Gm Global Technology Operations Llc


05/19/16
20160141597 

Method of manufacturing negative electrode for nonaqueous electrolyte secondary battery


A method of manufacturing a negative electrode for a nonaqueous electrolyte secondary battery includes: preparing a copper foil having a first main surface and a second main surface that are opposite sides of the copper foil; obtaining a granulated body by mixing a negative electrode active material, a thickener, a binder, and a solvent with each other to obtain a mixture and by granulating the mixture; obtaining a first negative electrode mixture layer by pressing the granulated body; arranging the first negative electrode mixture layer on the first main surface; and softening the copper foil by bringing the second main surface into contact with a heated roller in a state where the first negative electrode mixture layer is arranged on the first main surface. A temperature of the heated roller is a recrystallization temperature of the copper foil or higher..
Toyota Jidosha Kabushiki Kaisha


05/19/16
20160141596 

Method of pre-lithiating negative electrode


Disclosed is a method of pre-lithiating a negative electrode. More particularly, provided is a method of pre-lithiating a negative electrode, a surface of the negative electrode being lithiated by submerging a roll that is formed by rolling together a negative electrode, and copper (cu) foil, both sides of which are rolled with metallic lithium (li), in an electrolyte solution..
Lg Chem, Ltd.


05/19/16
20160141594 

Battery protection circuit module package, battery pack and electronic device including same


Provided are a battery protection circuit module package capable of achieving high integration and size reduction, and a battery pack and an electronic device including the same. The battery protection circuit module package includes a lead frame including a plurality of leads space apart from each other, and capable of being coupled and electrically connected to electrode tabs of a battery cell, battery protection circuit devices mounted on the lead frame and including a positive temperature coefficient (ptc) structure, and an encapsulant for encapsulating the battery protection circuit devices to expose a part of the lead frame..
Itm Semiconductor Co., Ltd


05/19/16
20160141592 


A terminal component includes an external terminal that is provided above a cover covering an electrode body; and an internal terminal that is provided below the cover and extends through a through-hole of the external terminal. A part of the internal terminal protrudes above the external terminal.
Toyota Jidosha Kabushiki Kaisha


05/19/16
20160141591 

Rechargeable battery having terminal


A rechargeable battery having a terminal is disclosed. In one aspect, the rechargeable battery includes an electrode assembly including a first electrode, a second electrode, and a separator interposed between the first electrode and the second electrode.
Samsung Sdi Co., Ltd.


05/19/16
20160141590 

Battery


A battery includes an electrode assembly; a positive electrode tab and a negative electrode tab both extending from the electrode assembly; an insulation spacer having openings through which the positive and negative electrode tabs extend, and a positive electrode lead and a negative electrode lead coupled to the respective positive and negative electrode tabs in the insulation spacer, wherein each opening has a first opening and a second opening, and wherein the first opening is at a lower region of the insulation spacer and the second opening is at a side region of the insulation spacer.. .
Samsung Sdi Co., Ltd.


05/19/16
20160141589 

Electrode assembly and battery pack having the same


The present invention relates to an electrode assembly and a battery pack having the same, which can reinforce strength of an electrode tab by a protection layer formed on at least one surface of each of a plurality of electrode tabs. The electrode assembly includes a first electrode plate having a plurality of first electrode tabs extending and protruding to one side, a second electrode plate having a plurality of second electrode tabs extending and protruding to one side, and a separator interposed between the first electrode plate and the second electrode plate.
Samsung Sdi Co., Ltd.


05/19/16
20160141588 

Secondary battery


A secondary battery includes: an electrode assembly; an electrode lead attached to an electrode tab extending from the electrode assembly, the electrode lead having a through-hole formed therein; a case accommodating the electrode assembly and the electrode lead; and a cap plate coupled to the case to seal an opening of the case and including a protrusion part protruding to the inside of the case, the protrusion part being coupled to the electrode lead through the through-hole by riveting, and the cap plate has at least one rivet groove formed around a periphery of the protrusion part.. .
Samsung Sdi Co., Ltd


05/19/16
20160141587 

Rechargeable battery


Disclosed herein is a rechargeable battery capable of maintaining alignment among a positive electrode, a negative electrode, and a separator of an electrode assembly even in the case in which a form thereof is changed or bent. The rechargeable battery includes: an electrode assembly formed by stacking a first electrode, a separator, and a second electrode, and having an alignment groove formed therein; a case having flexibility and accommodating the electrode assembly therein; and an alignment guide protruding from the case and partially coupled to the alignment groove so as to accommodate and guide a change in a length of the electrode assembly depending on bending..
Samsung Sdi Co., Ltd.


05/19/16
20160141583 

Battery module comprising connecting member composed of dissimilar metals


Disclosed herein is a battery module including battery cells, electrode terminals of which are electrically connected to each other via a connecting member, wherein each of the battery cells is configured to have a structure in which an electrode assembly is mounted in a battery case made of a laminate sheet including a metal layer and a resin layer, and plate-shaped electrode terminals protrude from the battery case, the electrode terminals include a first electrode terminal and a second electrode terminal made of dissimilar metals, the connecting member includes a main connecting part, to which the first electrode terminal is welded, the main connecting part including the metal of the first electrode terminal, and a buried connecting part, to which the second electrode terminal is welded, the buried connecting part including the metal of the second electrode terminal, the buried connecting part is buried in the main connecting part in a state in which the buried connecting part is exposed at one surface of the main connecting part such that the buried connecting part has the same height as the main connecting part to form an even surface, and the first electrode terminal and the second electrode terminal are welded respectively to the main connecting part and the buried connecting part at one surface of the main connecting part at which the buried connecting part is exposed.. .
Lg Chem, Ltd.


05/19/16
20160141577 

Energy storage device with an encapsulated electrode


Aspects of the disclosure can relate to an energy storage device including at least two electrodes (e.g., an anode and a cathode). At least one of the two electrodes can be formed from lithium or a lithium alloy.
Schlumberger Technology Corporation


05/19/16
20160141575 

Porous film composition for lithium ion secondary batteries, separator for lithium ion secondary batteries, electrode for lithium ion secondary batteries, and lithium ion secondary battery


A porous membrane composition for a lithium ion secondary battery, including a first particulate polymer, wherein the first particulate polymer has a core-shell structure including a core portion and a shell portion that partially covers an outer surface of the core portion, the core portion is formed from a polymer having a swelling degree in an electrolytic solution of 5 times or more and 30 times or less, and the shell portion is formed from a polymer having a swelling degree in the electrolytic solution of 1 time or more and 4 times or less.. .
Zeon Corporation


05/19/16
20160141573 

Battery pack


Battery pack includes the following elements: large number of battery cells; lower holding member provided to hold the lower parts of large number of battery cells aligned by battery holding parts, and having lower openings for exposing the negative electrode terminal side of the battery cells; a positive electrode current collecting plate and a negative electrode current collecting plate connected to the corresponding terminals of the battery cells; and holder formed of upper holding member and lower holding member. In holder, upper gas channel for guiding the gas jetted from battery cells to the front side is formed.
Sanyo Electric Co., Ltd.


05/19/16
20160141570 

Electric storage apparatus


An electric storage apparatus includes a plurality of electric storage devices, each electric storage device including a cell case in which an electrode assembly is accommodated, the cell case having a substantially hexahedral shape, the cell case being formed with an external terminal on one surface thereof, a first external housing for housing the electric storage devices, the first external housing comprising a pair of first main wall portions that are opposed to each other and a pair of first side wall portions that are opposed to each other, the pair of first main wall portions and the pair of first side wall portions defining a first opening at at least one end in a first direction thereof, and a second external housing for housing the first external housing.. .
Gs Yuasa International Ltd.


05/19/16
20160141565 

Secondary battery to which electrolyte can be additionally supplied


Disclosed is a secondary battery to which an electrolyte can be additionally supplied. More particularly, provided is a secondary battery including an electrode assembly that includes a positive electrode, a negative electrode, and a separator disposed between the positive electrode and the negative electrode, and a porous elastic body that can contain an electrolyte, which are installed in a battery case..
Lg Chem, Ltd.


05/19/16
20160141564 

Rechargeable battery


A rechargeable battery includes an electrode assembly having a first electrode and a second electrode of different polarities, a case with an opening that houses the electrode assembly, the case having a pair of opposing first side walls, each first side wall of the pair of first side walls including at least one groove extending from the opening of the case to an opposite side of the case, a cap assembly coupled to the opening of the case to seal the case, a first current collecting member and a second current collecting member inside the case, the first and second current collecting members being connected to the first electrode and the second electrode, respectively, and a first terminal and a second terminal on the cap assembly, the first and second terminals being connected to the first current collecting member and the second current collecting member, respectively.. .
Samsung Sdi Co., Ltd.


05/19/16
20160141563 

Lithium secondary battery


The present application relates to the field of energy storage devices, in particular to a lithium secondary battery. The battery comprises a shell having a bottom, a cap assembly, a positive terminal, a negative terminal, an electrode assembly and electrolyte, wherein a side wall of the shell comprises a pair of main planes and a pair of side faces, and the opening is arranged opposite to the bottom; the electrode assembly is formed by winding a positive plate, a negative plate and a composite separation film comprising a polymer microporous film layer and a ceramic composite material layer; a first extension portion extends from one end of the positive plate facing the cap assembly and is electrically connected with the positive terminal; a second extension portion extends from one end of the positive plate facing the cap assembly and is electrically connected with the negative terminal; and the air permeability of the composite separation film and the thickness of the side faces satisfy the relationship of 0.05 s/(100 ml·μm)≦a/b≦1.0 s/(100 ml·μm).
Ningde Amperex Technology Limited


05/19/16
20160141561 

Electrochemical cell and manufacturing electrochemical cell


To provide an electrochemical cell and a method of manufacturing the electrochemical cell capable of securing the electric reliability while simplifying the structure and reducing manufacturing man-hours and costs. The electrochemical cell includes an electrode group in which a positive electrode and a negative electrode are overlapped through a separator, a positive electrode container to which a positive electrode projecting portion of the positive electrode which projects from an overlapping portion with respect to the negative electrode is electrically connected and a negative electrode container to which a negative electrode projecting portion of the negative electrode which projects from the overlapping portion is electrically connected as well as demarcating a housing space which houses the electrode group with the positive electrode container, in which a conductive material containing a carbon-based material is interposed between the positive electrode projecting portion and the positive electrode container..
Seiko Instruments Inc.


05/19/16
20160141560 

Rechargeable battery


A rechargeable battery includes: an electrode assembly having first and second electrodes of different polarities; a finishing tape that covers a side and a lower end of the electrode assembly with respect to a virtual longitudinal center line perpendicular to a bottom face of the electrode assembly; a case that holds the electrode assembly and has an opening; a cap assembly coupled to the opening and sealing the case; a first current collecting member and a second current collecting member located within the case and connected to the first electrode and the second electrode, respectively; and a first terminal and a second terminal located on top of the cap assembly and connected to the first current collecting member and the second current collecting member, respectively.. .
Samsung Sdi Co., Ltd.


05/19/16
20160141559 

Organic light emitting diode display device and fabricating the same


An organic light emitting diode display device comprises: first and second substrates facing and spaced apart from each other; a gate line and a data line on the first substrate, the gate line and the data line crossing each other to define a plurality of pixel regions; at least one thin film transistor coupled to the gate line and the data line; a light emitting diode coupled to the at least one thin film transistor, the light emitting diode including a first electrode, an emitting layer and a second electrode; and a passivation layer on the light emitting diode, the passivation layer having a smaller area than the second electrode.. .
Lg Display Co., Ltd.


05/19/16
20160141558 

Organic light-emitting diode display and manufacturing method thereof


An oled display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage.
Samsung Display Co., Ltd.


05/19/16
20160141555 

Organic light emitting display device


Discussed is an organic light emitting display device for reducing a color defect or a color difference which occurs in the front or side of the organic light emitting display device. The organic light emitting display device can include a first electrode, a second electrode and an organic layer between the first electrode and the second electrode, the organic layer including at least one emission part.
Lg Display Co., Ltd.


05/19/16
20160141554 

Light emitting apparatus


An illuminator includes a light-emitting element and a light extraction sheet which transmits light occurring from the light-emitting element. The light-emitting element includes a first electrode having a light transmitting property, a second electrode, and an emission layer between the first and second electrodes.
Panasonic Intellectual Property Management Co., Ltd.


05/19/16
20160141553 

Organic light-emitting apparatus


An organic light-emitting apparatus includes a flexible substrate, an organic light-emitting device on the flexible substrate, the light emitting device including a first electrode, an emission layer, and a second electrode sequentially disposed on the flexible substrate, and an anisotropic film on the second electrode of the organic light-emitting device. The anisotropic film includes an anisotropic material horizontally oriented with respect to a surface of the flexible substrate..
Samsung Display Co., Ltd.


05/19/16
20160141546 

Display panel


An organic light emitting diode (oled) display device and a manufacturing method thereof are provided. The oled display device includes a first substrate, an organic light emitting element disposed on the first substrate, a first inorganic layer, and a second inorganic layer.
Innolux Corporation


05/19/16
20160141545 

Narrow bezel large area organic light emitting diode display


The present disclosure relates to a narrow bezel large area organic light emitting diode display. An organic light emitting diode display includes a substrate having a display area and a non-display area; a gate driver disposed in the non-display area; a ground line overlapping on the gate driver with a passivation layer; an anode electrode disposed in the display area; an organic light emission layer disposed in the display area and stacked on the anode electrode; and a cathode electrode stacked on the organic light emission layer and contacting the ground line..
Lg Display Co., Ltd.


05/19/16
20160141544 

Organic light-emitting display apparatus and manufacturing the same


An organic light-emitting display apparatus includes a substrate, and a thin-film transistor and a capacitor formed over the substrate. The apparatus further includes an interlayer insulation layer, a first organic insulating layer and a second organic insulation layer sequentially stacked over the substrate and covering the thin-film transistor and a capacitor.
Samsung Display Co., Ltd.


05/19/16
20160141543 

Blue light organic light-emitting diode and display including same


The present disclosure provides a blue light organic light-emitting diode, which includes a first electrode layer; a first hole injection layer disposed on the first electrode layer; a second hole injection layer disposed on first hole injection layer; a hole transport layer disposed on the second hole injection layer; a blue light emitting material layer disposed on the hole transport layer; an electron transport layer disposed on the blue light emitting material layer; and a second electrode layer disposed on the electron transport layer, wherein the second hole injection layer has a thickness of 85 nm˜105 nm. The present disclosure further provides a display including the device.
Everdisplay Optronics(shanghai) Limited


05/19/16
20160141541 

Organic el element, and organic el element manufacturing method


An organic el element 1 according to one embodiment of the present invention is an organic el element comprising: a continuous first electrode 20; a continuous second electrode 70; and a light emitting layer 50 arranged between the first electrode 20 and the second electrode 70, wherein the light emitting layer 50 has two light emitting regions 51, 52 and wherein the two light emitting regions 51, 52 are different in at least one of emission color and emission luminance.. .
Sumitomo Chemical Company, Limited


05/19/16
20160141538 

Organic light emitting diode display


An organic light emitting diode display includes: a substrate; a first electrode on the substrate; a second electrode opposed to the first electrode; a first light emitting unit and a second light emitting unit between the first electrode and the second electrode; and a charge generation layer between the first light emitting unit and the second light emitting unit. The first light emitting unit includes a blue fluorescent light emitting layer.
Samsung Display Co., Ltd.


05/19/16
20160141537 

Nanostructured anode-cathode array for optoelectronic devices


The nanostructured anode-cathode array for optoelectronic devices is an interdigitated electrode assembly for organic optoelectronic devices. The electrode assembly provides efficiency enhancement in metal oxide (zno) and metal (ag) electrodes for organic optoelectronic devices.
King Fahd University Of Petroleum And Minerals


05/19/16
20160141531 

Thin film transistor


A thin film transistor includes: a gate electrode; a gate insulating layer that covers the gate electrode; a source electrode and a drain electrode that are provided on the gate insulating layer; and an organic semiconductor layer that has a channel region between the source electrode and the drain electrode. The source electrode and the drain electrode each include a first conductive layer that increases adhesion with the gate insulating layer; a second conductive layer that has low electrical resistance; and a third conductive layer that make ohmic contact with the organic semiconductor layer.
Sharp Kabushiki Kaisha


05/19/16
20160141530 

Semiconductor element and semiconductor element manufacturing method


In an organic tft (1), a material used for uppermost layers (14b, 15b) of a source electrode (14) and a drain electrode (15) has a smaller difference in work function relative to a material used for a semiconductor layer (16) than does a material used for layers of the source electrode (14) and the drain electrode (15) other than the uppermost layers (14a, 14b). The top surfaces and side faces of the uppermost layers of the source electrode (14) and the drain electrode (15) contact the semiconductor layer (16) directly, and the layers of the source electrode (14) and the drain electrode (15) other than the uppermost layers are separated from the semiconductor layer (16) by a second gate insulating layer (12)..
Sharp Kabushiki Kaisha


05/19/16
20160141513 

Organic light-emitting device


An organic light-emitting device including a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer includes a hole transport region between the first electrode and the emission layer, the hole transport region including at least one selected from a hole transport layer, a hole injection layer, and a buffer layer, and an electron transport region between the emission layer and the second electrode, the electron transport region including at least one selected from a hole blocking layer, an electron transport layer, and an electron injection layer, wherein the electron transport region includes a compound represented by formula 1 and a compound represented by formula 2. .
Samsung Display Co., Ltd.


05/19/16
20160141512 

Organic light-emitting device


An organic light-emitting device including a first electrode; a second electrode facing the first electrode; an emission layer between the first electrode and the second electrode; and an electron transport region between the emission layer and the second electrode; wherein the electron transport region includes a condensed cyclic compound represented by formula 1 below:. .
Samsung Display Co., Ltd.


05/19/16
20160141511 

Organic light-emitting device


An organic light-emitting device including a first electrode; a second electrode facing the first electrode; an emission layer between the first electrode and the second electrode; and an electron transport region between the second electrode and the emission layer, wherein the electron transport region includes at least one first compound represented by the following formula 1, at least one second compound represented by the following formula 2, and at least one third compound represented by the following formula 30:. .
Samsung Display Co., Ltd.


05/19/16
20160141500 

Solar cell


An solar cell of an embodiment includes a first electrode, an electron transport layer containing a metal oxide, a self-assembled monolayer, a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and a second electrode. The self-assembled monolayer includes a fullerene-containing compound having a fullerene portion including a fullerene or a fullerene derivative, an absorption group to the metal oxide, and a bond group bonding the fullerene portion and the absorption group.
Kabushiki Kaisha Toshiba


05/19/16
20160141494 

Resistive memory device having field enhanced features


A resistive memory device includes a bottom electrode and a top electrode sandwiching a switching layer. The device also includes a field enhancement (fe) feature that extends from the bottom electrode either into the switching layer or is covered by switching layer and that is to enhance an electric field generated by the two electrodes to thereby confine a switching area of the device at the fe feature.
Hewlett-packard Development Company, L.p.


05/19/16
20160141492 

Memristor and methods for making the same


An example of the memristor includes a bottom electrode, a switchable material positioned on the bottom electrode, and a cured negative or positive resist that forms an interlayer dielectric positioned on the switchable material. An open area is formed in the interlayer dielectric.
Hewlett-packard Development Company, L.p.


05/19/16
20160141489 

Topological method to build self-aligned mtj without a mask


A method of forming a self-aligned mtj without using a photolithography mask and the resulting device are provided. Embodiments include forming a first electrode over a metal layer, the metal layer recessed in a low-k dielectric layer; forming a mtj layer over the first electrode; forming a second electrode over the mtj layer; removing portions of the second electrode, the mtj layer, and the first electrode down to the low-k dielectric layer; forming a silicon nitride-based layer over the second electrode and the low-k dielectric layer; and planarizing the silicon nitride-based layer down to the second electrode..
Globalfoundries Inc.


05/19/16
20160141488 

Method for electrically contacting a piezoelectric ceramic


A method for electrically contacting a piezoelectric ceramic includes: providing the piezoelectric ceramic having electrodes for electrically contacting the piezoelectric ceramic and having a flexible, electrically conductive film; producing a composite by applying the flexible, electrically conductive film at least partially to an electrode of the piezoelectric ceramic; forming a durable, electrically conductive connection between the flexible, electrically conductive film and the electrode of the piezoelectric ceramic. Also a sound transducer, as well as a sound transducer array produced using the method for electrically contacting a piezoelectric ceramic..
Robert Bosch Gmbh


05/19/16
20160141487 

Manufacturing high-temperature piezoelectric element electrode and piezoelectric element structure


A manufacturing method for an electrode of a high-temperature piezoelectric element, comprises: coating traditional conductive slurry on surfaces of a molded piezoelectric material (1); then polarizing the piezoelectric material (1); and then removing the coating of conductive slurry (2) on the surfaces there of, and connecting the piezoelectric material to outside electrode lead wires (3) to output a signal generated by piezoelectric effect thereof. A structure of a high-temperature piezoelectric element, comprises polarized piezoelectric material (1), wherein the coating of metallic conductive slurry (2) is removed from the surfaces of the polarized piezoelectric material (1) and the surfaces of the polarized piezoelectric material (1) is connected to electrode lead wires (3) to output a signal generated by piezoelectric effect thereof.
Xiamen Niell Electronics Co., Ltd.


05/19/16
20160141479 

Thermoelectric power module


A thermoelectric power module capable of suppressing increase of heat-leakage between a heat exchanger at a higher temperature part and another heat exchanger at a lower temperature part while effectively preventing oxidation of a thermoelectric element, an electrode, and a joint layer for joining the thermoelectric element to the electrode, and preventing a short circuit due to extraneous materials, dew condensation, and so on. The thermoelectric power module includes: a thermoelectric element employing a bismuss-tellurium (bi—te) based thermoelectric material; at least one barrier layer disposed on the thermoelectric element; an electrode; an electrode protection layer disposed at least on one principal surface of the electrode; a solder layer having a side surface formed with a recess, the solder layer joining a first region of the electrode protection layer to the at least one barrier layer; and a coating film disposed on a side surface of the thermoelectric element, a side surface of the at least one barrier layer, and the side surface of the solder layer, the coating film covering a second region adjacent to the first region of the electrode protection layer and being filled into the recess of the solder layer..
Kelk Ltd.


05/19/16
20160141478 

Laminated thermoelectric conversion element and manufacturing method therefor


A laminated thermoelectric conversion element is configured to generate electricity from a difference in temperature with respect to a heat-transfer direction. The thermoelectric conversion element includes opposed first and second surfaces which extend in the heat-transfer direction.
Murata Manufacturing Co., Ltd.


05/19/16
20160141475 

Composite substrate, light emitting device, and manufacturing the light emitting device


A composite substrate includes a plate-like lead frame having a plurality of supporting leads and a plurality of element containers supported by the supporting leads. The plurality of element containers each has a first electrode lead, a second electrode lead, and a resin molded body integrated with the first electrode lead and the second electrode lead, and within the resin molded body, the first electrode lead, the second electrode lead, and the supporting lead are held spaced apart from one another.
Nichia Corporation


05/19/16
20160141474 

Light emitting device


A light emitting device includes a substrate, an electrode connection layer, an epitaxial structure and a plurality of pads. The substrate has an upper surface, a lower surface and a plurality of conductive through holes.
Playnitride Inc.


05/19/16
20160141471 

Process for forming ultra-micro leds


A flexible light sheet includes a bottom conductor layer overlying a flexible substrate. An array of vertical light emitting diodes (vleds) is printed as an ink over the bottom conductor layer so that bottom electrodes of the vleds electrically contact the bottom conductor layer.
Nthdegree Technologies Worldwide Inc.


05/19/16
20160141470 

Light emitting device


A light emitting device includes a substrate, an electrode connection layer, an epitaxial structure and a plurality of pads. The substrate has an upper surface, a lower surface and a plurality of conductive through holes.
Playnitride Inc.


05/19/16
20160141466 

Thin film light emitting diode


Light emitting devices comprise a substrate having a surface and a side surface; a semiconductor structure on the surface of the substrate, the semiconductor structure having a first surface, a second surface and a side surface, wherein the second surface is opposite the first surface, wherein the first surface, relative to the second surface, is proximate to the substrate, and wherein the semiconductor structure comprises a first-type layer, a light emitting layer and a second-type layer; a first and a second electrodes; and a wavelength converting element arranged on the side surface of the semiconductor structure, wherein the wavelength converting element has an open space, and wherein the open space is a portion not covered by the wavelength converting element.. .
Lg Innotek Co., Ltd.


05/19/16
20160141459 

Light-emitting device


A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer; an electrode structure on the light-emitting stack and comprising a first electrode and an extension electrode protruding from the first electrode toward an edge of the light-emitting device in a first extending direction; a transparent insulating layer between the light-emitting stack and the electrode structure, wherein the transparent insulating layer comprises a first part and an extension part protruding from the first part toward the edge of the light-emitting device in a second extending direction; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the first electrode is right above the first part, and a part of the extension electrode is right above the extension part..
Epistar Corporation


05/19/16
20160141458 

Light-emitting device


A light-emitting device comprises a light-emitting stack comprising a first surface and a second surface opposite to the first surface; a first electrode formed on the second surface of the light-emitting stack; a current blocking layer formed on the first surface of the light-emitting stack and corresponding to a location of the first electrode; and a second electrode covering the current blocking layer and comprising a plurality of first metal layers and a plurality of second metal layers alternating with the plurality of first metal layers, wherein the plurality of first metal layers is discontinuous.. .
Epistar Corporation


05/19/16
20160141457 

Light-emitting device


A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.. .
Samsung Electronics Co., Ltd.


05/19/16
20160141456 

Electrode structure of light emitting device


An electrode structure of a light emitting device includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes electrically contact with the light emitting device and are separated from one other.
Playnitride Inc.


05/19/16
20160141454 

Light-emitting diode device


A light-emitting element, includes a substrate; a first light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, and wherein the triangular upper surface has three sides and three vertexes; a first electrode formed on the first light-emitting stack and located near a first side of the three sides of the triangular upper surface; and a second electrode formed on the first light-emitting stack; including a second electrode pad near a first vertex of the three vertexes; and a second electrode extending part extending from the second electrode pad in two directions, disposed along other two sides of the three sides to surround the first electrode and stopping at the first side to form an opening.. .
Epistar Corporation


05/19/16
20160141453 

Lattice-matched light emitting element


A light emitting element and its manufacturing method are disclosed. A larger end face of a gallium nitride pyramid contacts with a mounting face of a gallium nitride layer disposed on a substrate, with c-axes of the gallium nitride layer and the gallium nitride pyramid coaxial to each other, and with m-planes of the gallium nitride layer and the gallium nitride pyramid parallel to each other.
National Sun Yat-sen University


05/19/16
20160141446 

Method for manufacturing light emitting device


A method for manufacturing a light emitting device is provided. Step (a): a semiconductor wafer having a substrate and at least one epitaxial structure is provided.
Playnitride Inc.


05/19/16
20160141439 

Light detection device


A semiconductor light detection element includes a plurality of avalanche photodiodes operating in geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side.
Hamamatsu Photonics K.k.


05/19/16
20160141433 

Composition for solar cell electrode and electrode prepared using the same


Wherein r1 is na+, k+, nh4+, or ph3+; r2 is a hydrogen atom or a c1 to c2 alkyl group; and n is an integer of 1 to 3,500.. .

05/19/16
20160141425 

Thin film transistor assembly, array substrate manufacturing the same, and display device


The present disclosure discloses a thin film transistor assembly, an array substrate and a method of manufacturing the same, and a display device including the array substrate. The array substrate includes a substrate; a plurality of thin film transistors formed on the substrate; and a plurality of light shielding layers, each of the light shielding layers being arranged between a source electrode and a drain electrode of the thin film transistor and configured to block light from the exterior from illuminating an active layer of the thin film transistor.
Boe Technology Group Co., Ltd.


05/19/16
20160141422 

Semiconductor device


A semiconductor device in which deterioration of electrical characteristics which becomes more noticeable as the transistor is miniaturized can be suppressed is provided. The semiconductor device includes an oxide semiconductor stack in which a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer are stacked in this order from the substrate side over a substrate; a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor stack; a gate insulating film over the oxide semiconductor stack, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating film.
Semiconductor Energy Laboratory Co., Ltd.


05/19/16
20160141419 

Three dimensional nand device having reduced wafer bowing and making thereof


A monolithic three dimensional nand string includes a plurality of control gate electrodes extending substantially parallel to a major surface of a substrate, and at least one trench extending substantially perpendicular to the major surface of the substrate. The trench is filled with at least a first trench material and a second trench material.
Sandisk Technologies, Inc.


05/19/16
20160141415 

Semiconductor device and fabrication method thereof


A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a p type well region and an n type well region formed in a substrate, a gate insulating layer having a non-uniform thickness and formed on the p type well region and the n type well region, a gate electrode formed on the gate insulating layer, a p type well pick-up region formed in the p type well region, and a field relief oxide layer formed in the n type well region between the gate electrode and the drain region..
Magnachip Semiconductor, Ltd.


05/19/16
20160141413 

Semiconductor devices


Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice constant of the substrate, a first gate electrode on the channel layer, a first source region of a first conductivity type at a first side of the first gate electrode, a first body region of a second conductivity type under the first source region and contacting the first source region, a first drain region of the first conductivity type disposed at a second side of the first gate electrode, a first drift region of the first conductivity type under the first drain region and contacting the first drain region, and a first stud region in the channel layer and the first drift region. The first stud region has an impurity concentration higher than an impurity concentration of the first drift region..

05/19/16
20160141410 

Semiconductor component with dynamic behavior


One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor zone doped complementarily to the drift zone and adjacent to the drift zone in a direction of the first side; a second semiconductor zone of the same conduction type as the drift zone adjacent to the drift zone in a direction of the second side; at least two trenches arranged in the semiconductor body and extending into the semiconductor body and arranged at a distance from one another; and a field electrode arranged in the at least two trenches adjacent to the drift zone. The at least two trenches are arranged at a distance from the second semiconductor zone in the vertical direction, a distance between the trenches and the second semiconductor zone is greater than 1.5 times the mutual distance between the trenches, and a doping concentration of the drift zone in a section between the trenches and the second semiconductor zone differs by at most 35% from a minimum doping concentration in a section between the trenches..
Infineon Technologies Ag


05/19/16
20160141409 

Semiconductor device and manufacturing semiconductor device


A semiconductor device provided herein includes a trench in which a gate insulating layer (gil) and a gate electrode are located. A step is provided in a lateral surface of the trench.
Toyota Jidosha Kabushiki Kaisha


05/19/16
20160141403 

Semiconductor device and insulated gate bipolar transistor with transistor cells and sensor cell


A transistor cell region of a semiconductor device includes transistor cells that are electrically connected to a first load electrode. An idle region includes a gate wiring structure that is electrically connected to gate electrodes of the transistor cells.
Infineon Technologies Ag


05/19/16
20160141397 

Semiconductor device and manufacturing the same


A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment..
Semiconductor Energy Laboratory Co., Ltd.


05/19/16
20160141396 

Semiconductor device and manufacturing same


To provide a semiconductor device having a nonvolatile memory improved in characteristics. In the semiconductor device, a nonvolatile memory has a high-k insulating film (high dielectric constant film) between a control gate electrode portion and a memory gate electrode portion and a transistor of a peripheral circuit region has a high-k/metal configuration.
Renesas Electronics Corporation


05/19/16
20160141390 

Method for manufacturing display panel


A method for manufacturing display panel is disclosed, which comprises: (a) providing a substrate, an oxide semiconductor layer disposed on the substrate, and a gate electrode disposed on the substrate and corresponding to the oxide semiconductor layer; (b) forming a metal layer on the oxide semiconductor layer; (c) forming a photoresist on the metal layer, and etching the metal layer to form a source electrode and a drain electrode; (d) heating the photoresist and the photoresist covers at least partial of side walls of the source electrode and the drain electrode; (e) applying an alkaline solution on the substrate; and (f) removing the photoresist to expose the source electrode and the drain electrode.. .
Innolux Corporation


05/19/16
20160141385 

Method of manufacturing nitride semiconductor device


A method of manufacturing a nitride semiconductor device includes: forming a transistor having a gate electrode schottky-joined to a nitride semiconductor layer; performing high-temperature annealing at a temperature of 200 to 360° c. For 8 to 240 hours on the transistor; and after the high-temperature annealing, performing rf burn-in by applying radiofrequency power to the transistor at a channel temperature of 180 to 360° c..
Mitsubishi Electric Corporation


05/19/16
20160141382 

Fabrication of nanoscale vacuum grid and electrode structure with high aspect ratio dielectric spacers between the grid and electrode


Some embodiments of vacuum electronics call for a grid that is fabricated in close proximity to an electrode, where, for example, the grid and electrode are separated by nanometers or microns. Methods and apparatus for fabricating a nanoscale vacuum grid and electrode structure are described herein..
Elwha Llc


05/19/16
20160141381 

Semiconductor devices and methods for fabricating the same


Semiconductor devices and methods for fabricating the same are provided. The semiconductor devices include a fin active pattern formed to project from a substrate, a gate electrode formed to cross the fin active pattern on the substrate, a gate spacer formed on a side wall of the gate electrode and having a low dielectric constant and an elevated source/drain formed on both sides of the gate electrode on the fin active pattern.
Samsung Electronics Co., Ltd.


05/19/16
20160141380 

Method for manufacturing a semiconductor device, and semiconductor device


A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a main surface and a gate electrode which is within a trench between neighboring semiconductor mesas. The gate electrode is electrically insulated from the neighboring semiconductor mesas by respective dielectric layers.
Infineon Technologies Austria Ag


05/19/16
20160141378 

Thin film transistor substrate


A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction lc(002) that ranges from 67 Å or more to 144 Å or less..
Samsung Display Co., Ltd.


05/19/16
20160141373 

Semiconductor devices including field effect transistors and methods of forming the same


A semiconductor device includes an active pattern provided on a substrate and a gate electrode crossing over the active pattern. The active pattern includes a first buffer pattern on the substrate, a channel pattern on the first buffer pattern, a doped pattern between the first buffer pattern and the channel pattern, and a second buffer pattern between the doped pattern and the channel pattern.

05/19/16
20160141372 

Ga2o3 semiconductor element


Provided is a ga2o3-based semiconductor element having less leak current and a large on/off ratio. In one embodiment, provided is a ga2o3-based misfet having a β-ga2o3 single crystal layer formed on a high-resistance β-ga2o3 substrate, a source electrode and drain electrode formed on the β-ga2o3 single crystal layer, a gate electrode formed between the source electrode and drain electrode on the β-ga2o3 single crystal layer, and an insulating film that has an oxide insulator as the primary component and that covers the surface of the β-ga2o3 single crystal layer at the region between the drain electrode and the gate electrode and the region between the gate electrode and the source electrode..
National Institute Of Information And Communicatio Ns Technology


05/19/16
20160141367 

Semiconductor devices including channel dopant layer


A semiconductor device includes a semiconductor substrate including a well dopant layer having a first conductivity type, a gate electrode on the well dopant layer, a channel dopant layer in the well dopant layer and spaced apart from a top surface of the semiconductor substrate, a channel region between the gate electrode and the channel dopant layer, and source/drain regions in the well dopant layer at both sides of the gate electrode. The channel dopant layer and the channel region have the first conductivity type.
Samsung Electronics Co., Ltd.


05/19/16
20160141364 

Semiconductor device and manufacturing semiconductor device


Provided is a semiconductor device comprising: a first conductivity type base layer having a mos gate structure formed on its front surface side; a second conductivity type first collector layer formed on a rear surface side of the base layer; a second conductivity type second collector layer formed on a rear surface side of the first collector layer with a material the same with that of the base layer, the second collector layer formed to be thinner than the first collector layer and having a higher impurity concentration than that of the first collector layer; a collector electrode formed on a rear surface side of the second collector layer; and a second conductivity type separation layer surrounding the mos gate structure on a front surface side of the base layer and formed from a front surface of the base layer to a front surface of the first collector layer.. .
Fuji Electric Co., Ltd.


05/19/16
20160141359 

Semiconductor structure with silicon oxide layer having a top surface in the shape of continuous hills and fabricating the same


A semiconductor structure is provided. The semiconductor structure includes a substrate, a silicon oxide layer disposed on the substrate, and at least part of a gate electrode covering the silicon oxide layer.
United Microelectronics Corp.


05/19/16
20160141351 

Organic light emitting display device and manufacturing the same


An organic light emitting display device includes a substrate including a plurality of pixel regions each including a light emitting region and a transparent region, a gate electrode in the light emitting region, a first insulating interlayer covering the gate electrode and extending from the light emitting region to the transparent region, a drain electrode on the first insulating interlayer and constituting a transistor in conjunction with the gate electrode, a planarization layer covering the transistor and exposing a top surface of the first insulating interlayer in the transparent region, and a first electrode on the planarization layer.. .
Samsung Display Co., Ltd.


05/19/16
20160141350 

Organic light emitting diode display


An organic light emitting diode display includes a plurality of pixels. At least one pixel is connected to a scan line receive a scan signal, a data line to receive a data signal, and voltage line to receive a driving voltage.
Samsung Display Co., Ltd.


05/19/16
20160141349 

Organic light-emitting diode display having high aperture ratio and manufacturing the same


An organic light-emitting diode display can include a substrate in which an emission area and a non-emission area are defined; a first transparent conductive layer, a light shielding layer, a buffer layer and a semiconductor layer sequentially laminated on the non-emission area; a gate electrode superposed on the center region of the semiconductor layer, having a gate insulating layer interposed therebetween; a drain electrode coming into contact with one side of the semiconductor layer, having an interlevel insulating layer covering the gate electrode interposed therebetween, and formed of a second transparent conductive layer and a metal layer laminated thereon; a first storage capacitor electrode disposed under the interlevel insulating layer in the emission area and formed of the first transparent conductive layer; and a second storage capacitor electrode superposed on the first storage capacitor electrode, having the interlevel insulating layer interposed therebetween, and formed of the second transparent conductive layer.. .
Lg Display Co., Ltd.


05/19/16
20160141346 

Organic light-emitting display apparatus and manufacturing the same


An organic light-emitting display apparatus includes a substrate, an active layer of a thin film transistor formed over the substrate, a gate insulating layer formed over the active layer, a gate electrode of the thin film transistor formed over the gate insulating layer, an interlayer insulating layer formed over the gate electrode and the first electrode, a source electrode and a drain electrode formed over the interlayer insulating layer, a pixel electrode including a first region in direct contact with an upper surface of the interlayer insulating layer and a second region in direct contact with an upper surface of one of the source electrode and the drain electrode, a pixel defining layer covering the source and drain electrodes and including an opening which exposes the first region of the pixel electrode in an area that does not overlap the thin film transistor.. .
Samsung Display Co., Ltd.


05/19/16
20160141344 

Light-emitting element display device


A light-emitting element display device includes a substrate, one or a plurality of thin film transistors, a light-emitting element, a first electrode, and a second electrode. The substrate includes an insulating material.
Japan Display Inc.


05/19/16
20160141343 

Oled and fabrication method thereof, and display apparatus


An oled and a fabrication method thereof, and a display apparatus are provided. The oled comprises: a base substrate; a first electrode, an organic functional layer and a transparent or semi-transparent second electrode sequentially disposed on the base substrate; and a covering layer provided on a side of the second electrode away from the base substrate.
Boe Technology Group Co., Ltd.


05/19/16
20160141342 

Array substrate and manufacturing method thereof, and display apparatus


An array substrate and a manufacturing method thereof, and a display apparatus are provided. The array substrate may include a base substrate, a scan line, a data line arranged to cross each other on the base substrate, pixel units arranged in a matrix and defined by the scan lines and data lines, wherein a thin film transistor, a pixel electrode and a light emitting structure are disposed in the pixel unit, the pixel electrode is disposed above the layer where the thin film transistor is located, the region covered by the pixel electrode includes a region over the thin film transistor; the light emitting structure is disposed above the layer where the thin film transistor is located, and its covered region corresponds to the region covered by the pixel electrode..
Beijing Boe Optoeletronics Technology Co., Ltd.


05/19/16
20160141341 

Display device


A sub-pixel is provided in a display area of an organic el display device. A bank layer surrounds an outer periphery of the sub-pixel.
Japan Display Inc.


05/19/16
20160141340 

Organic el display device and manufacturing the same


An organic el display device includes a display area, a measurement area provided outside the display area, an organic layer that is formed in the display area and in the measurement area and includes a light-emitting layer, and a conductive film that is formed on the organic layer in the display area and functions as the upper electrode. The conductive film covers the organic layer in the measurement area..
Japan Display Inc.


05/19/16
20160141339 

Organic light emitting display device


An organic light emitting display device includes a substrate extending along a first direction, the substrate comprising a pixel region having a plurality of pixels and a transparent region that is located adjacent to the pixel region, a lower electrode disposed on the substrate in the pixel region, the lower electrode extending along the first direction, a light emitting layer disposed on the lower electrode, the light emitting layer extending along the first direction, and an upper electrode disposed on the light emitting layer in the pixel region, the upper electrode extending along the first direction. The upper electrode exposes the transparent region..
Samsung Display Co., Ltd.


05/19/16
20160141338 

Tandem-type organic light-emitting diode and display device


A tandem-type organic light-emitting diode (oled) and a display device are provided. The tandem-type oled includes a substrate, a first electrode, a first light-emitting unit, a charge generate layer, a second light-emitting unit and a second electrode.
Shenzhen China Star Optoelectronics Technology Co. Ltd.


05/19/16
20160141333 

Magneto-elastic non-volatile multiferroic logic and memory with ultralow energy dissipation


Memory cells, non-volatile logic gates, and combinations thereof have magneto-tunneling junctions (mtjs) which are switched using potential differences across a piezoelectric layer in elastic contact with a magnetostrictive nanomagnet of an mtj. One or more pairs of electrodes are arranged about the mtj for supplying voltage across the piezoelectric layer for switching.
Virginia Commonwealth University


05/19/16
20160141331 

Light-emitting diode


A light-emitting diode is provided. The light-emitting diode comprises: a first light-emitting structure, comprising: a first area; a second area; a first isolation path having an electrode isolation layer between the first area and the second area; an electrode contact layer covering the first area; and an electrical connecting structure covering the second area; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and the electrode contact layer covers a sidewall of the first area..
Epistar Corporation


05/19/16
20160141324 

Semiconductor image sensor module, manufacturing the same as well as camera and manufacturing the same


A semiconductor image sensor module 1 at least includes a semiconductor image sensor chip 2 having a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chip 3 for processing image signals formed in the semiconductor image sensor chip 2, wherein a plurality of bump electrodes 15a are formed on a first main surface, a plurality of bump electrodes 15b are formed on the image signal processing chip 3, both the chips 2 and 3 are formed to be laminated through heat dissipating means 4 and the plurality of bump electrodes 15a of the semiconductor image sensor chip 2 and the plurality of bump electrodes 15b on the image signal processing chip 3 are electrically connected.. .
Sony Corporation


05/19/16
20160141312 

Display device


A display device includes: a pixel electrode; a switching element that is connected to the pixel electrode and charges the pixel electrode; a reference potential terminal set at a reference potential; and a resistive element that is connected to the pixel electrode and the reference potential terminal so as to be interposed therebetween, the resistive element forming a resistance component against electric charges moving between the pixel electrode and the reference potential terminal.. .
Sharp Kabushiki Kaisha


05/19/16
20160141310 

Thin film transistor substrate and manufacturing the same


A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode..
Samsung Display Co., Ltd.


05/19/16
20160141309 

Display device and electronic device


An object of the invention is to provide a circuit technique which enables reduction in power consumption and high definition of a display device. A switch controlled by a start signal is provided to a gate electrode of a transistor, which is connected to a gate electrode of a bootstrap transistor.
Semiconductor Energy Laboratory Co., Ltd.


05/19/16
20160141308 

Display device


By applying an ac pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an ac pulse.
Semiconductor Energy Laboratory Co., Ltd.


05/19/16
20160141307 

Array substrate and manufacturing method thereof


A method of manufacturing an array substrate includes applying a first color filter and a second color filter over a first and second pixel regions respectively and the color filters have an overlapped portion in wiring region; and forming a contact hole, which partially exposes the drain electrode therethrough, by etching at least one of the overlapping first and the second color filters, and the forming the contact hole includes selectively etching an upper part of the overlapped portion during etching a photoresist layer covering the overlapped portion, the overlapped portion of first and second color filters is etched without requiring an additional masking process, preventing a decrease of liquid crystal margin due to large height difference of the overlapped color filters, preventing misalignment of color filters and mixing of colors.. .
Samsung Display Co., Ltd.


05/19/16
20160141306 

Method for manufacturing array substrate, array substrate thereor and display device


The present disclosure provides a method for manufacturing an array substrate, an array substrate and a display device. The method includes: forming a gate line, a gate electrode and an insulating layer which covers the gate line and the gate electrode on a first surface of a substrate; forming a semiconductive film on the insulating layer; patterning the semiconductive film using the gate electrode and the gate line as a mask, so as to form an source semiconductive layer at a region where the gate line and the gate electrode are located; and manufacturing a target semiconductive layer using the source semiconductive layer..
Boe Technology Group Co., Ltd.


05/19/16
20160141293 

Semiconductor memory device and manufacturing same


According to one embodiment, a semiconductor memory device includes a memory cell; and a peripheral transistor. The memory cell includes a first channel, a first insulating film provided on the first channel, a charge storage film provided on the first insulating film, a second insulating film provided on the charge storage film, a first semiconductor film provided on the second insulating film, and a first electrode film provided on the first semiconductor film and containing a metal.
Kabushiki Kaisha Toshiba


05/19/16
20160141290 

Method of forming a memory capacitor structure using a self-assembly pattern


A capacitor structure and method of forming thereof on a substrate is described. The capacitor structure includes a substrate having a plurality of capacitor electrodes formed within an insulative retaining material, and a collar layer structure in contact with the plurality of capacitor electrodes, wherein the collar layer structure interconnects the plurality of capacitor electrodes and exposes the underlying insulative retaining material through openings having an unguided, random self-assembly pattern.
Tokyo Electron Limited


05/19/16
20160141289 

Semiconductor device and manufacturing same


To provide a semiconductor device having improved reliability. An element isolation region comprised mainly of silicon oxide is buried in a trench formed in a semiconductor substrate.
Renesas Electronics Corporation


05/19/16
20160141284 

Semiconductor device


A transistor (2) is provided on a semiconductor substrate (8). A temperature detection diode (4) for monitoring temperature of an upper surface of the semiconductor substrate (8) is provided on the semiconductor substrate (8).
Mitsubishi Electric Corporation


05/19/16
20160141273 

Semiconductor device


This semiconductor device is formed by stacking a plurality of semiconductor chips that each have a plurality of bump electrodes, each of the plurality of semiconductor chips being provided with an identification section formed on a respective side face. Each semiconductor chip has a similar arrangement for its respective plurality of bump electrodes, and each identification section is formed so that the positional relationship with a respective reference bump electrode provided at a specific location among the respective plurality of bump electrodes is the same in each semiconductor chip.
Ps4 Luxco S.a.r.l.


05/19/16
20160141272 

Semiconductor device and manufacturing same


A semiconductor device which is provided with: a wiring substrate which has a first region, and a relay pad and a connection pad that are arranged outside the first region; a first semiconductor chip which has an electrode pad that is formed on one surface, and which is mounted on the first region of the wiring substrate; a first wire that connects the electrode pad and the relay pad with each other; and a second wire that connects the relay pad and the connection pad with each other.. .
Ps4 Luxco S.a.r.l.


05/19/16
20160141269 

Multi-chip semiconductor device


A multi-chip semiconductor device includes a plate-shaped first semiconductor chip having a first connection portion in which a first semiconductor chip electrode is formed on a first main surface of the first semiconductor chip or on a first side surface vertical to the first main surface, and a plate-shaped second semiconductor chip having a second connection portion in which a second semiconductor chip electrode is formed on a second side surface vertical to a second main surface of the second semiconductor chip. Each of the first and second connection portions includes at least an inclined surface that is inclined with respect to each of the first and second main surfaces.
Olympus Corporation


05/19/16
20160141267 

Semiconductor device, manufacturing semiconductor device, and electronic apparatus


There is provided a semiconductor device, including a semiconductor substrate, an interlayer insulating layer formed on the semiconductor substrate, a bonding electrode formed on a surface of the interlayer insulating layer, and a metal film which covers an entire surface of a bonding surface including the interlayer insulating layer and the bonding electrode.. .
Sony Corporation


05/19/16
20160141253 

Display substrate and manufacturing method thereof as well as display device


The embodiments of the present invention provide a display substrate and a manufacturing method thereof, as well as a display device including the display substrate. The display substrate may include a base substrate and a thin film transistor arranged on the base substrate, the thin film transistor having a gate, a gate insulating layer, an oxide semiconductor active layer as well as a source electrode and a drain electrode arranged on the base substrate sequentially; the display substrate may further include an ultraviolet blocking layer, the ultraviolet blocking layer having a first portion arranged between the base substrate and the oxide semiconductor active layer.
Boe Technology Group Co., Ltd.


05/19/16
20160141247 

Semiconductor device and manufacturing method thereof


A method of manufacturing a semiconductor device includes forming an opening in a first substrate and filling the opening with a metal to form a first connection electrode. The first substrate is then polished by chemical mechanical polishing under conditions such that a polishing rate of the metal is less that of the region surrounding the metal.
Kabushiki Kaisha Toshiba


05/19/16
20160141240 

Field-effect transistor, manufacturing the same, and radio-frequency device


There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.. .
Sony Corporation


05/19/16
20160141220 

Hetero-bipolar transistor and producing the same


A semiconductor device provided with a substrate made of material except for semiconductors and having thermal conductivity greater than that of the semiconductor material. The semiconductor device provides, on the support, a metal layer, a primary mesa, and electrodes formed on the primary mesa.
Sumitomo Electric Industries, Ltd.


05/19/16
20160141218 

Circuit module and manufacturing method thereof


There is provided a circuit module where a sufficient amount of underfill resin may be supplied to corner portions of a semiconductor chip. A circuit module includes a circuit board provided with a plurality of electrode pads on a surface of the board, a semiconductor chip arranged on the board, the chip including a surface and a back surface, where each of a plurality of solder bumps and provided on the back surface is solder joined to a corresponding one of the plurality of electrode pads, and an underfill provided between the surface of the board and the back surface of the chip.
International Business Machines Corporation


05/19/16
20160141217 

Electronic package and fabrication method thereof


A method for fabricating an electronic package, including the steps of: providing a substrate having a plurality of electronic elements and a plurality of separation portions formed between the electronic elements, wherein each of the electronic elements has an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; forming at least an opening in each of the separation portions from a side corresponding to the inactive surfaces of the electronic elements, wherein the at least an opening does not penetrate the separation portion; forming an encapsulant in the opening; and singulating the electronic elements along the opening from a side corresponding to the active surfaces of the electronic elements. As such, each of the electronic elements has a side surface adjacent to and connecting the active and inactive surfaces of the electronic element and the side surface is partially covered by the encapsulant for protection..
Siliconware Precision Industries Co., Ltd.


05/19/16
20160141214 

Method for manufacturing semiconductor module and intermediate assembly unit of the same


A method for manufacturing a semiconductor module includes the step of soldering two or more semiconductor elements having substrate materials and heights different from each other to a metal foil disposed at one side of an insulating substrate; connecting a plurality of wiring members, not interconnecting the semiconductor elements, to front face electrodes of the semiconductor elements through solder so that heights from a surface of the insulating substrate to top faces of the wiring members become same level with each other; inspecting a leakage current while applying electricity on each one of semiconductor elements individually through the wiring members; and connecting the top faces of the wiring members with a bus bar.. .
Fuji Electric Co., Ltd.


05/19/16
20160141212 

Techniques and configurations to reduce transistor gate short defects


Embodiments of the present disclosure describe techniques and configurations to reduce transistor gate short defects. In one embodiment, a method includes forming a plurality of lines, wherein individual lines of the plurality of lines comprise a gate electrode material, depositing an electrically insulative material to fill regions between the individual lines and subsequent to depositing the electrically insulative material, removing a portion of at least one of the individual lines to isolate gate electrode material of a first transistor device from gate electrode material of a second transistor device.
Intel Corporation


05/19/16
20160141211 

Semiconductor device including power and logic devices and related fabrication methods


Semiconductor device structures and related fabrication methods are provided. An exemplary fabrication method involves forming a layer of gate electrode material overlying a semiconductor substrate, forming a layer of masking material overlying the gate electrode material, and patterning the layer of masking material to define a channel region within a well region in the semiconductor substrate that underlies the gate electrode material.

05/19/16
20160141183 

Dry etching apparatus and method


There is provided dry etching apparatus including a stage on which a wafer is placed, an antenna electrode, a high frequency power supply, a shower plate, and an rf bias power supply. Further, a bias path controller is provided on the side of the antenna electrode.
Hitachi High-technologies Corporation


05/19/16
20160141181 

Semiconductor device, fabricating the same, and apparatus used in fabrication thereof


A semiconductor device includes a substrate, upper impurity regions in upper portions of the substrate, metal electrodes electrically connected to the upper impurity regions, metal silicide layers between the metal electrodes and the upper impurity regions, and a lower impurity region in a lower portion of the substrate. A method of fabricating the semiconductor device and an apparatus used in fabricating the semiconductor device is also provided..

05/19/16
20160141179 

Selective growth for high-aspect ration metal fill


An improved conductive feature for a semiconductor device and a technique for forming the feature are provided. In an exemplary embodiment, the semiconductor device includes a substrate having a gate structure formed thereupon.
Taiwan Semiconductor Manufacturing Company, Ltd.


05/19/16
20160141168 

Miniature charged particle trap with elongated trapping region for mass spectrometry


A miniature electrode apparatus is disclosed for trapping charged particles, the apparatus including, along a longitudinal direction: a first end cap electrode; a central electrode having an aperture; and a second end cap electrode. The aperture is elongated in the lateral plane and extends through the central electrode along the longitudinal direction and the central electrode surrounds the aperture in a lateral plane perpendicular to the longitudinal direction to define a transverse cavity for trapping charged particles..
The University Of North Carolina At Chapel Hill


05/19/16
20160141167 

Collision cell


A method of operating a gas-filled collision cell in a mass spectrometer is provided. The collision cell has a longitudinal axis.
Thermo Fisher Scientific (bremen) Gmbh


05/19/16
20160141162 

Projection-type charged particle optical system and imaging mass spectrometry apparatus


Provided is a projection-type charged particle optical system in which a projection magnification can be changed while a decrease in the accuracy in measuring a mass-to-charge ratio is being suppressed. A projection-type charged particle optical system according to the present invention includes a first electrode disposed so as to face a sample and having an opening formed therein for allowing a charged particle to pass, a second electrode disposed on a side of the first electrode opposite to where the sample is disposed and having an opening formed therein for allowing the charged particle to pass, and a flight-tube electrode disposed such that the charged particle that has been emitted from the sample and has passed through the second electrode enters the flight-tube electrode and being configured to form a substantially equipotential space thereinside.
Canon Kabushiki Kaisha


05/19/16
20160141154 

Measurement system and measurement method


A measurement system for measuring a consumption amount of a focus ring in a plasma etching apparatus including a processing chamber, a lower electrode and the focus ring surrounding a periphery of the lower electrode, comprises a sensor substrate having a distance sensor and a measurement unit configured to measure a consumption amount of the focus ring. The measurement unit includes a transfer instruction unit, an acquisition unit and a measurement unit.
Tokyo Electron Limited


05/19/16
20160141152 

Method and system for modifying a substrate using a plasma


A method and system of modifying a substrate using a plasma are described comprising providing a first electrode and a second electrode; arranging the substrate such that a portion of the substrate is between the electrodes; supplying a voltage to at least one of the electrodes so as to create a plasma discharge between the electrodes which contacts at least said portion of the substrate, moving either the substrate and/or said second electrode such that said substrate and said second electrode are being linearly displaced relative to each other along an axis of linear displacement during said movement; and wherein said second electrode is arranged relative to said axis of linear displacement such that said linear movement causes a first section of the portion of substrate to have a greater residence time between the electrodes during said linear displacement than a second section of said portion of the substrate. A method and system of modifying a substrate using a plasma is also described comprising providing a first electrode and a second electrode; arranging the substrate such that a portion of the substrate is between the electrodes; supplying a voltage to at least one of the electrodes so as to create a plasma discharge between the electrodes which contacts at least said portion of the substrate, moving either the substrate and/or said second electrode such that said substrate and said second electrode are being linearly displaced relative to each other along an axis of linear displacement during said movement; and further comprising the step of rotating either the substrate or said second electrode about an axis of rotation during said relative linear displacement along said axis, so that a first section of the portion of substrate has a greater residence time between the electrodes than a second section of said portion of substrate..
Innovation Ulster Limited


05/19/16
20160141143 

Electron beam writing apparatus and output control method


An output control method according to an embodiment is to control an output by a deflection amplifier that outputs a voltage signal to a deflection electrode of an electron beam writing apparatus. The voltage signal is proportional to input data, and the method includes: performing, for the voltage signal generated by synthesizing respective outputs by a plurality of d/a converters to which a control range of the voltage signal is assigned, the respective outputs by the plurality of d/a converters being proportional to respective inputs, sampling on at least either a lower limit value of the voltage signal within the control range or an upper limit value thereof; and generating a correction value to correct the output by the d/a converter based on the sampling result..
Nuflare Technology, Inc.


05/19/16
20160141142 

Blanking system for multi charged particle beams, and multi charged particle beam writing apparatus


A blanking system for multi charged particle beams includes a blanking aperture array device to include a first substrate where a plurality of openings corresponding to passage positions of multi-beams are formed in a penetrating manner from the upper surface, and a plurality of electrode groups each having a pair of electrodes which are close to a corresponding one of the plurality of openings and are at opposite sides, on a same surface, of the corresponding one of the plurality of openings are arranged on the first substrate, a second substrate whose lower surface is electrically connected through a bump to the upper surface of the first substrate, and a mounting substrate whose upper surface is electrically connected through a bump to the lower surface of the second substrate.. .
Nuflare Technology, Inc.


05/19/16
20160141133 

Capacitive microelectromechanical switches with dynamic soft-landing


A microelectromechanical system (mems)-based electrical switch. The electrical switch includes a moveable electrode, a dielectric layer positioned adjacent the moveable electrode on a first side of the dielectric layer and spaced apart from the moveable electrode when the moveable electrode is in an inactivated position and in contact with the moveable electrode when the moveable electrode is in an activated position, and a substrate attached to the dielectric layer on a second side opposite to the first side, the moveable electrode is configured to brake prior to coming in contact with the dielectric layer when the moveable electrode is switched between the inactivated state and the activated state..
Purdue Research Foundation


05/19/16
20160141119 

Vacuum switching apparatus, and contact assembly and securing an electrical contact to an electrode therefor


A contact assembly is for a vacuum switching apparatus. The vacuum switching apparatus includes a vacuum envelope.
Eaton Corporation


05/19/16
20160141116 

Metal powder, electronic component and producing the same


There is provided an electronic component including: a ceramic body; internal electrodes formed within the ceramic body; and external electrodes electrically connected to the internal electrodes, formed on external surfaces of the ceramic body, and including a metal powder having nano protrusions formed of an organic metal on a surface of a metal particle.. .
Samsung Electro-mechanics Co., Ltd.


05/19/16
20160141115 

Solid ion capacitor


A positive electrode and a negative electrode are formed on both main surfaces of a solid electrolyte. Preferably, the solid electrolyte is a thin film body with a thickness of less than or equal to 200 μm, and contains an ion conductive compound such as li ions.
Energy Storage Materials Llc


05/19/16
20160141108 

Method for drying electrode pair, manufacturing lithium-ion secondary battery, manufacturing electric double-layer capacitor, and manufacturing lithium-ion capacitor


A method for drying an electrode pair is disclosed. In at least one embodiment, the method includes preparing a positive electrode by applying a positive electrode material to a current collector; preparing a negative electrode by applying a negative electrode material to a current collector; preparing one set of an electrode pair made up of a positive electrode, a separator, and a negative electrode which are laminated in this order or preparing sets of electrode pairs, the sets being laminated, a separator being provided between the respective sets, each of the electrode pairs being made up of a positive electrode, a separator, and a negative electrode which are laminated in this order; accommodating the electrode pair(s) in a container; and drying the container in which the electrode pair(s) has been accommodated by use of the freeze-drying method..

05/19/16
20160141105 

Three-terminal capacitor


A three-terminal capacitor includes a capacitor element including first through sixth surfaces, first-side and second-side outer electrodes, a center outer electrode between the first-side and second-side outer electrodes, and conductor layers within the capacitor element. A height h2 is greater than a height h3, where the height h2 represents a higher one of a height at a center of a portion of the first-side outer electrode on the fifth surface and a height at a center of a portion of the first-side outer electrode on the sixth surface, and the height h3 represents a height at a center of a portion of the first-side outer electrode on the third surface, wherein the height h2 and the height h3 extend in the thickness direction..
Murata Manufacturing Co., Ltd.


05/19/16
20160141104 

Three-terminal capacitor


A three terminal capacitor includes a capacitor element including first through sixth surfaces, first-side and second-side outer electrodes, a center outer electrode between the first-side and second-side outer electrodes, and conductor layers. The conductor layers include a pair of outermost conductor layers that are respectively nearest to the fifth and sixth surfaces, and thicknesses of the pair of outermost conductor layers are greater than a thickness of a center conductor layer nearest to a center of the capacitor element in a width direction..
Murata Manufacturing Co., Ltd.


05/19/16
20160141103 

Multilayer ceramic electronic component


A multilayer ceramic capacitor includes a ceramic element body including internal electrodes therein. External electrodes are provided on end surfaces of the ceramic element body and electrically connected to exposed portions of respective ones of the internal electrodes.
Murata Manufacturing Co., Ltd.


05/19/16
20160141096 

Transfer layer for wireless capacitive power


A power receiver device including: a pair of receiver electrodes (341, 342) for capacitively coupling with the pair of transmitter electrodes (321, 322) placed on one side of a surface; and a deformable transfer layer (371, 372) placed between each of the pair of the receiver electrodes and another side of the surface. A power signal generated by the power driver (110) is wirelessly transferred from the pair of transmitter electrodes (321, 322) to the pair of receiver electrodes (341, 342) to power a load (150) in the power receiver device..
Koninklijke Philips N.v.


05/19/16
20160141093 

Electronic component and board having the same


An electronic component includes a body including internal electrodes; an insulating layer disposed on side surfaces of the body and at least one of an upper surface of the body and a lower surface of the body; and an external electrode disposed on an end surface of the body and connected to the internal electrodes. The external electrode extends to at least one of the upper surface of the body, the lower surface of the body, and the side surfaces of the body, and partially overlaps the insulating layer..
Samsung Electro-mechanics Co., Ltd.


05/19/16
20160141068 

Paste for forming solar cell electrode and electrode prepared using the same


A paste for solar cell electrodes includes a conductive powder, a glass frit, and an organic vehicle. The glass frit includes bismuth (bi), tellurium (te), and antimony (sb), and has a mole ratio of bismuth (bi) to tellurium (te) of about 1:1 to about 1:30..
Samsung Sdi Co., Ltd.


05/19/16
20160141065 

Porous substrate electrode body and producing same


The object of the present invention is to provide an electrode member with the hydrogel substrate, capable of producing a high-voltage pulse. Further, the other object of the present invention is to provide an electrode member which is not broken due to a deformation of the hydrogel.
Tohoku University


05/19/16
20160141003 

Semiconductor memory device


According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a memory cell array disposed on the semiconductor substrate, a capacitor and a control circuit. The memory cell array includes a plurality of memory cells.
Kabushiki Kaisha Toshiba




Electrode topics: Phosphoric Acid, Internal Combustion Engine, Carbon Atoms, Porous Carbon, Double Layer Capacitor, Graphene Oxide, Aqueous Solution, Lithium Ion, Exhaust Gas, Soot Sensor, Combustion, Calibration, Electronic Apparatus, Electrical Signal, Electric Conversion

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