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Electric Conversion patents

      

This page is updated frequently with new Electric Conversion-related patent applications.




 Imaging device and imaging system patent thumbnailImaging device and imaging system
The imaging device performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with each other. In a first period during which a photoelectric conversion portion of at least one of the pixels accumulates an electric charge, signals based on electric charges held in holding portions of the plurality of pixels are sequentially output to an output line.
Canon Kabushiki Kaisha


 Image device, image system, and control  image device patent thumbnailImage device, image system, and control image device
An image device transfers charges of a previous frame from the holding units to the amplification units, during a read-out period of each frame, the read-out period includes a period in which a plurality of overflow transistors are in an on-state and a first period in which a plurality of photoelectric conversion units accumulate charges, and, during a second period following the first period, the plurality of photoelectric conversion units of the plurality of pixels accumulate charges while the plurality of holding units of the plurality of pixels hold the charges accumulated during the first period. During the first and second periods, each of the plurality of pixels performs a plurality of times of charge transfers from the photoelectric conversion unit to the holding unit.
Canon Kabushiki Kaisha


 Imaging device and imaging system patent thumbnailImaging device and imaging system
An imaging device includes pixels including a photoelectric conversion unit, a holding unit that holds charge, and an amplifier unit. The pixels include a first group outputting a signal based on charge generated during a first exposure period, and a second group outputting a signal based on charge generated during a second exposure period longer than the first exposure period.
Canon Kabushiki Kaisha


 Imaging device and imaging system patent thumbnailImaging device and imaging system
An imaging device includes pixels including a photoelectric conversion unit, a holding unit holding charge transferred from the photoelectric conversion unit, and an amplifier unit outputting signal based on the charge. The pixels output a first signal based on charge generated in a first exposure period and a second signal based on charge generated in a second exposure period of different length.
Canon Kabushiki Kaisha


 Thermal emission source and two-dimensional photonic crystal for use in the same emission source patent thumbnailThermal emission source and two-dimensional photonic crystal for use in the same emission source
A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer..
Japan Science And Technology Agency


 Active antenna associated device and system, and transmitting and receiving calibration method patent thumbnailActive antenna associated device and system, and transmitting and receiving calibration method
An active antenna associated device and system, and a transmitting and receiving calibration method, used for implementing extensible design of an antenna array, reducing construction implementation difficulty, and ensuring construction implementation reliability. The active antenna unit comprises: n active antenna arrays, a main calibration coupling circuit unit, a transmitting and receiving calibrating unit, a calibration parameter storage unit, and a radio over fiber (rof) photoelectric conversion unit, wherein n is larger than 1.
China Academy Of Telecommunications Technology


 Photovoltaic cell module patent thumbnailPhotovoltaic cell module
In accordance with one embodiment, there is provided a photovoltaic cell module including a plurality of photovoltaic cell structures including a hole transport layer and an electron transport layer which are disposed on a common photoelectric conversion layer so that electromotive force polarities are alternately different, wherein the photovoltaic cell structures are electrically connected in series.. .
Kabushiki Kaisha Toshiba


 Organic photoelectric conversion device patent thumbnailOrganic photoelectric conversion device
According to one embodiment, an organic photoelectric conversion device includes: an organic photoelectric conversion layer, a metal-oxide layer, and a buffer layer. The metal-oxide layer includes metal oxide.
Kabushiki Kaisha Toshiba


 Photoelectric conversion element, solid-state imaging device, and organic light-absorbing material patent thumbnailPhotoelectric conversion element, solid-state imaging device, and organic light-absorbing material
A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode and the second electrode. The photoelectric conversion material layer contains a substance formed of the following structural formula (1)..
Sony Corporation


 Photoelectric conversion material dispersion liquid and producing method thereof, producing method and producing apparatus of photoelectric conversion film, and photoelectric conversion device patent thumbnailPhotoelectric conversion material dispersion liquid and producing method thereof, producing method and producing apparatus of photoelectric conversion film, and photoelectric conversion device
A photoelectric conversion material dispersion liquid of an embodiment includes: perovskite crystal particles having a composition represented as abx3, where a is a monovalent cation of an amine compound, b is a divalent cation of a metal element, and x is a monovalent anion of a halogen element, and having an average particle diameter of not less than 10 nm nor more than 10000 nm; and a dispersion medium which is composed of a poor solvent to the perovskite crystal particles, and in which the perovskite crystal particles are dispersed.. .
Kabushiki Kaisha Toshiba


Thermoelectric generator

A thermoelectric generator includes: a substrate; a thermoelectric conversion film on the substrate; a thermally insulating film that covers the thermoelectric conversion film; a first heat transfer material that transfers a first heat above the thermally insulating film to a first portion of the thermoelectric conversion film; and a second heat transfer material that transfers a second heat below the substrate to a second portion of the thermoelectric conversion film, the second portion being separated from the first portion.. .
Fujitsu Limited

Compound-semiconductor photovoltaic cell and manufacturing compound-semiconductor photovoltaic cell

A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell made of a first compound-semiconductor material which lattice matches with gaas or ge; a first tunnel junction layer arranged on a deep side farther than the first photoelectric conversion cell in a light incident direction, and including a first p-type (alx1ga1-x1)y1in1-y1as (0≦x1<1, 0<y1≦1) layer and a first n-type (alx2ga1-x2)y2in1-y2p (0≦x2<1, 0<y2<1) layer; and a second photoelectric conversion cell arranged on a deep side farther than the first tunnel junction layer in the light incident direction, and made of a second compound-semiconductor material which is a gaas-based semiconductor material. The first photoelectric conversion cell and the second photoelectric conversion cell are joined via the first tunnel junction layer, and a lattice constant of the first n-type (alx2ga1-x2)y2in1-y2p layer is greater than a lattice constant of the first photoelectric conversion cell..
Rich Company, Ltd.

Photoelectric conversion element, solar cell, solar cell module, and solar power generating system

A photoelectric conversion element of an embodiment includes a substrate, a transparent first electrode on the substrate, a second electrode, and a light absorbing layer of a homo-junction type interposed between the first electrode and the second electrode. The light absorbing layer includes a p-type region on the second electrode side and an n-type region on the first electrode side.
Kabushiki Kaisha Toshiba

Photoelectric conversion element, solar battery, solar battery module, and solar power generation system

A photoelectric conversion element of an embodiment includes a first electrode, a second electrode, and a light-absorbing layer containing a chalcopyrite-type compound containing a group ib element, a group iiib element, and a group vib element between the first electrode and the second electrode. A region in which concentration of the group ib element in the light-absorbing layer is from 0.1 to 10 atom %, both inclusive, is included in a region up to a depth of 10 nm in a direction from a principal plane of the light-absorbing layer on a side of the second electrode to a side of the first electrode..
Kabushiki Kaisha Toshiba

Image sensor device

Image sensor devices of related art have a problem that an auto-focus accuracy deteriorates due to crosstalk of electrons between a plurality of photodiodes formed below one microlens. According to one embodiment, at least some of a plurality of pixels in an image sensor device include: first and second photoelectric conversion elements (pd_l, pd_r) that are formed on a semiconductor substrate below one microlens (45); and a potential barrier (34) that inhibits transfer of electric charges between at least a part of a lower region of the first photoelectric conversion element (pd_l) and at least a part of a lower region of the second photoelectric conversion element (pd_r) in a depth direction of the semiconductor substrate..
Renesas Electronics Corporation

Solid-state image sensor and image pickup apparatus

A solid-state image sensor comprising a plurality of pixels including photoelectric conversion elements arranged in matrix and an microlens array in which a plurality of microlenses respectively corresponding to the plurality of pixels are arranged, wherein a first group including microlenses each having a first shape and a second group including microlenses each having a second shape different from the first shape are arranged in the microlens array, and a center of a region in which the microlenses constituting the first group is shifted from a center of an effective pixel region of the image sensor, and a region in which the microlenses constituting the second group are arranged includes two portions arranged to sandwich the entire first group.. .
Canon Kabushiki Kaisha

Image pickup device and manufacturing image pickup device

An image pickup device having a pixel region in which pixels are arranged, and in which a multilayer wiring structure is disposed. Each pixel includes a photoelectric conversion unit, a charge accumulation unit, a floating diffusion, a light shielding portion covering the charge accumulation unit and opening above the photoelectric conversion unit, and a waveguide which overlaps at least partially a portion at which the light shielding portion opens in a plan view.
Canon Kabushiki Kaisha

Solid-state image pickup device and image pickup system

A solid-state image pickup device has an image pickup pixel including a first photoelectric conversion portion and a first transistor and a focus detection pixel including a second photoelectric conversion portion, a second transistor, and a light shielding portion, in which a reflection preventing portion is provided on the underface side of the light shielding portion.. .
Canon Kabushiki Kaisha

Image sensor and image pickup apparatus including the same

An image sensor includes a plurality of pixels. Each of the plurality of pixels includes a microlens, a waveguide unit having a core and a cladding and capable of propagating light transmitted through the microlens, and a pair of photo diodes and configured to carry out photoelectric conversion of light guided by the waveguide unit.
Canon Kabushiki Kaisha

Photovoltaic cell and manufacturing the same, manufacture device and production line for photovoltaic cell

The present invention provides a photovoltaic cell and a method of manufacturing the same, a manufacture device and a production line for a photovoltaic cell. The method of manufacturing a photovoltaic cell includes steps of: forming an anode layer on a substrate; forming, by spin coating, a donor-acceptor polymer mixed film layer on the substrate; and forming a cathode layer on the substrate.
Hefei Boe Optoelectronics Technology Co., Ltd.

Organic photoelectric conversion device and solid-state imaging device

In the general formula (1), a1, a2 and a3 respectively represent a different substituent group.. .

Thermoelectric conversion module and manufacturing method thereof

Provided is a thermoelectric conversion module having a high heat resistance. The thermoelectric conversion module includes a first substrate, a second substrate, a thermoelectric element, and a bonding layer.
Yamaha Corporation

Thermoelectric conversion material-containing resin composition and film formed from thermoelectric conversion material-containing resin composition

Provided are a resin composition that enables simple formation of a film having excellent thermoelectric conversion characteristics and flexibility, and a film that is formed using the resin composition and that has excellent thermoelectric conversion characteristics and flexibility. A thermoelectric conversion material-containing resin composition contains (a) an insulating resin, (b) an inorganic thermoelectric conversion material, and (c) a charge transport material.
Zeon Corporation

Thermoelectric conversion material and thermoelectric conversion module

The present invention provides a thermoelectric conversion material that has low thermal conductivity and that is stable at a high temperature, and a thermoelectric conversion module using the same. The thermoelectric conversion material includes a granular base material including a semiconductor, a fine particle with a guest material distributed in the granular base material, and a binder with the guest material on a grain boundary of the granular base material.
Hitachi, Ltd.

Image pickup device, manufacturing image pickup device, and electronic apparatus

An image pickup device includes: a photodiode provided in a silicon substrate, and configured to generate electric charge corresponding to an amount of received light, by performing photoelectric conversion; and a transfer transistor provided at an epitaxial layer on the silicon substrate, and configured to transfer the electric charge generated in the photodiode, wherein the transfer transistor includes a gate electrode and a channel region, the gate electrode being embedded in the epitaxial layer, and the channel region surrounding the gate electrode, and the channel region has, in a thickness direction, a concentration gradient in which a curvature of a potential gradient is free from a mixture of plus and minus signs.. .
Sony Semiconductor Solutions Corporation

Imaging device, operating the same, module, and electronic device

An imaging device which can perform imaging with a global shutter system and in which transistors are shared by pixels is provided. The imaging device includes first and second photoelectric conversion elements and first to sixth transistors.
Semiconductor Energy Laboratory Co., Ltd.

Image sensors including non-uniformly doped transfer gate in recess

An image sensor includes a photoelectric conversion portion providing a recessed region, a transfer gate provided in the recessed region, and a floating diffusion region adjacent the transfer gate. The transfer gate includes a first pattern and a second pattern, which are sequentially stacked in the recessed region and have different conductivity types from each other..
Samsung Electronics Co., Ltd.

Photoelectric conversion element and solar cell

Where in the formula (1a) or (1b), r1 and r2 represent a substituted or unsubstituted alkyl group or aromatic hydrocarbon group and may be identical or different, and r1 and r2 may bind with each other to form a substituted or unsubstituted heterocyclic group containing a nitrogen atom.. .



Electric Conversion topics:
  • Electric Conversion
  • Photoelectric Conversion
  • Semiconductor
  • Electronic Device
  • Semiconductor Material
  • Surfactant
  • Conversion Efficiency
  • Conductive Layer
  • Transport Layer
  • Sensitizer
  • Silicon Oxynitride
  • Incident Light
  • Semiconductor Substrate
  • Image Processing


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    This listing is a sample listing of patent applications related to Electric Conversion for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Electric Conversion with additional patents listed. Browse our RSS directory or Search for other possible listings.


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