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Electric Conversion patents

      

This page is updated frequently with new Electric Conversion-related patent applications.




 Image sensor, imaging method, and electronic apparatus patent thumbnailImage sensor, imaging method, and electronic apparatus
The present technology relates to an image sensor, an imaging method, and an electronic apparatus that are capable of improving the image quality. It includes a plurality of signal lines for reading signals from pixels including a photoelectric conversion element, each of the plurality of signal lines being provided for one column of pixels, and a fixing unit configured to fix the potential of the plurality of signal lines to a predetermined potential, is started.
Sony Corporation


 Photoelectric conversion device and imaging system patent thumbnailPhotoelectric conversion device and imaging system
A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit, a reset transistor, and an amplifier transistor that outputs a signal from the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode.
Canon Kabushiki Kaisha


 Transport apparatus and transport method patent thumbnailTransport apparatus and transport method
A transport apparatus includes: a client signal transceiving unit which transceives a client signal; a line signal transceiving unit which performs electric-optic conversion on a line signal to be transmitted, transmits an optical line signal, performs optic-electric conversion on a received line signal, and outputs an electrical line signal; and a plurality of signal processing units which perform signal processing on the client signal to generate the line signal to be transmitted and perform signal processing on the electrical line signal to generate the client signal. Each of the plurality of signal processing units includes a signal transceiving unit which performs transfer of a branched signal obtained by branching a signal to be transmitted and a merged signal obtained by merging received signals with another signal processing unit, and the signal transceiving unit of each of the plurality of signal processing units and the signal transceiving unit of the other signal processing unit are coupled via an inter-chip wiring..
Nippon Telegraph And Telephone Corporation


 Photoelectric conversion device and imaging device patent thumbnailPhotoelectric conversion device and imaging device
Rings a, b, c, and d in the formula (1) are pyridine rings. Each of r1 to r11 in the formula (1) is one selected from the group consisting of hydrogen, a straight-chain alkyl group, a branched alkyl group, an aryl group, and an electron-withdrawing heteroaryl group..

 Solid-state imaging device,  manufacturing the same, and electronic apparatus patent thumbnailSolid-state imaging device, manufacturing the same, and electronic apparatus
A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged..
Sony Corporation


 Semiconductor device patent thumbnailSemiconductor device
A plurality of pixel regions are aligned in a matrix in a semiconductor substrate, and each of the plurality of pixel regions includes an active region, two photoelectric conversion elements, two floating capacitance regions, and a first transistor. Each of the plurality of pixel regions includes two transfer transistors each having each of the two photoelectric conversion elements and each of the two floating capacitance regions.
Renesas Electronics Corporation


 Apparatus and  acquiring image patent thumbnailApparatus and acquiring image
An image acquisition apparatus includes a color filter on which a plurality of types of color filter elements are arranged, an optical path modulation optical element configured to shift an incident position of an image on the color filter by electrically modulating an optical path of the image, and a photoelectric conversion cell array configured to acquire image information for each color by detecting, in pixel units, light which has passed through the color filter. A color image is obtained by acquiring, in a time division manner, the image information for each color of the image of which a position is changed by the optical path modulation optical element by using a detection signal of the photoelectric conversion cell array, and combining the acquired image information for each color..
Samsung Electronics Co., Ltd.


 Wind direction meter, wind direction/flow meter, and movement direction meter patent thumbnailWind direction meter, wind direction/flow meter, and movement direction meter
A wind direction meter has the following plurality of sensors and a control unit. Each sensor has a first surface and has first and second interlayer connection members made of different metals or semiconductors.
Denso Corporation


 Radiation imaging apparatus and  controlling radiation imaging apparatus patent thumbnailRadiation imaging apparatus and controlling radiation imaging apparatus
A radiation imaging apparatus that has a plurality of pixels capable of outputting an image signal in accordance with an irradiation of radiation comprises a photoelectric conversion unit which has a first capacitance and a second capacitance as charge accumulation capacitances and a gain correction unit configured to correct a pixel value in relation to a dose of the irradiated radiation based on an image signal outputted in accordance with a charge accumulated by the photoelectric conversion unit. The gain correction unit changes an interval of gain correction points at which to perform correction in accordance with a switch from a first capacitance to a second capacitance..
Canon Kabushiki Kaisha


 Imaging device patent thumbnailImaging device
An imaging device according to an aspect of the invention includes an imaging optical system (12) having a wide-angle optical system and a telephoto optical system which are provided in different regions, a directional sensor (17) that has a plurality of pixels including photoelectric conversion elements which are two-dimensionally arranged, pupil-divides light beams which are incident through the wide-angle optical system and the telephoto optical system, and selectively receives the beams, a pan/tilt mechanism (32) that moves a direction of an imaging optical axis of the telephoto optical system with respect to a direction of an imaging optical axis of the wide-angle optical system, and an image acquisition unit (22) that acquires a wide-angle image received from the directional sensor (17) through the wide-angle optical system and a telephoto image received from the directional sensor (17) through the telephoto optical system.. .
Fujifilm Corporation


Image pickup apparatus and image pickup system

An image pickup apparatus performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with one another. In a first period in which a photoelectric conversion unit of at least one of the pixels stores charge, signals based on charges stored in holding units of the pixels are successively output to output lines.
Canon Kabushiki Kaisha

Imaging device and imaging method

Provided is an imaging device including an imaging element having a first photoelectric conversion unit and a second photoelectric conversion unit, in which a light-receiving efficiency of the second photoelectric conversion unit is lower than a light-receiving efficiency of the first photoelectric conversion unit; an optics that guides a light flux from an object to the imaging element; and a control unit that selects a combination of the first photoelectric conversion unit and the second photoelectric conversion unit used for a motion image capturing and a static image capturing in accordance with a brightness of the object.. .
Canon Kabushiki Kaisha

Perylene-based materials for organic photoelectric conversion layers

The present disclosure relates to perylene-based molecules and their use in photoelectric conversion layer(s) and/or an organic or hybrid image sensor. The present disclosure also relates to absorption layer(s) and photoelectric conversion layer(s) comprising a molecule according to the present disclosure.
Sony Corporation

Thermoelectric conversion element and producing the same

A thermoelectric conversion element includes a p-type film having a perovskite structure, the p-type film including co; an n-type film having a perovskite structure, the n-type film including ti; first and second i-type films configured to be arranged to face each other across the n-type film, the first and second i-type films having a perovskite structure and including ti; and a barrier film configured to be interposed between a multilayer body and the p-type film, the barrier film having a perovskite structure and including zr, the multilayer body including the n-type film and the first and second i-type films.. .
Fujitsu Limited

Thermoelectric conversion element, producing thermoelectric conversion element and thermoelectric conversion apparatus

A thermoelectric conversion element includes: a first film including a perovskite structure; a second film and a third film, including a perovskite structure, disposed in such a manner that the first film is interposed between the second film and the third film; a fourth film, including a perovskite structure, disposed so as to interpose the second film with the first film; and a fifth film, including a perovskite structure, disposed so as to interpose the third film with the first film, wherein an offset in conduction band between the first film and the second film and an offset in conduction band between the first film and the third film is less than 0.25 ev, and an offset in conduction band between the second film and the fourth film and an offset in conduction band between the third film and the fifth film is more than 1 ev.. .
Fujitsu Limited

Imaging device, module, and electronic device

An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels.
Semiconductor Energy Laboratory Co., Ltd.

Image sensors

An image sensor includes a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer in the substrate, a floating diffusion region in the substrate at an edge of the active region, and a transfer gate on the active region. The transfer gate is in contact with a portion of the device isolation layer adjacent the active region..
Samsung Electronics Co., Ltd.

Image sensors using different photoconversion region isolation structures for different types of pixel regions

An image sensor includes a semiconductor substrate, a first pair of photoelectric conversion regions in a first pixel region of the substrate and a first isolation structure between the photoelectric conversion regions of the first pair of photoelectric conversion regions. The sensor further includes a second pair of photoelectric conversion regions in a second pixel region of the substrate adjacent the first pixel region and a second isolation structure between the photoelectric conversion regions of the second pair of photoelectric conversion regions and having different optical properties than the first isolation structure.
Samsung Electronics Co., Ltd.

Imaging device

In a preferred aspect of the invention, an imaging optical system having a wide-angle optical system and a telephoto optical system which are provided in different regions is provided. A directional sensor that has a plurality of pixels including photoelectric conversion elements which are two-dimensionally arranged pupil-divides light beams which are incident through the wide-angle optical system and the telephoto optical system, and selectively receives the light beams.
Fujifilm Corporation

Image sensor and fabricating the same

Provided is an image sensor having improved characteristics. An image sensor in accordance with an embodiment of the present invention may include first and second photoelectric conversion elements formed in a substrate, wherein the first photoelectric conversion element has a first impurity region; a device isolation trench formed in the substrate and between the first and the second photoelectric conversion elements, wherein a sidewall of the device isolation trench is in contact with the first impurity region; and an epitaxial layer filling the device isolation trench, and having different conductivity from the first impurity region..
Sk Hynix Inc.

Stacked image sensor

A stacked image sensor includes a first photoelectric conversion layer including a plurality of first photoelectric conversion regions; a second photoelectric conversion layer disposed on the first photoelectric conversion layer, and including a plurality of second photoelectric conversion regions; and a plurality of color filters disposed on the plurality of second photoelectric conversion regions, wherein at least one of the plurality of first photoelectric conversion regions includes a plurality of third photoelectric conversion regions that perform auto-focusing.. .
Samsung Electronics Co., Ltd.

Solid-state image pickup apparatus, and image pickup system using solid-state image pickup apparatus

A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit.
Canon Kabushiki Kaisha

Imaging element and imaging device

An imaging element according to the present disclosure includes: a first pixel and a second pixel each including a light receiving section and a light condensing section, in which the light receiving section includes a photoelectric conversion element, and the light condensing section is configured to allow entering light to be condensed toward the light receiving section; a trench provided between the first pixel and the second pixel; a first light shielding film embedded in the trench; and a second light shielding film provided on part of a light receiving surface of the light receiving section of the second pixel, in which the second light shielding film is continuous with the first light shielding film.. .
Sony Corporation

Solid-state imaging device, manufacturing method thereof, and electronic apparatus

A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.. .
Sony Corporation

Image sensor and manufacturing the same

An image sensor including a color splitter and a method of manufacturing the image sensor is provided. The image sensor includes a photoelectric conversion layer; a plurality of color filters disposed on the photoelectric conversion layer; a light transmission layer disposed on the photoelectric conversion layer and the plurality of color filters; and a color splitter that is disposed on the light transmission layer, comprises a top surface and a side surface exposed to ambient air, and is configured to transmit a portion of light incident on the color splitter toward a first pixel region and refract a remaining portion of the incident light toward second pixel regions adjacent to the first pixel region, according to a difference between a refractive index of the color splitter and a refractive index of the ambient air..
Samsung Electronics Co., Ltd.

Optical module

An optical module includes: a board configured to be equipped with an optical element that carries out photoelectric conversion; a flexible optical waveguide configured to guide light output from the optical element or light to be input to the optical element; and a chassis including: a housing part configured to house the board, and a passage configured to lead the flexible optical waveguide to outside of the housing part and bend in such a manner that one or more steps are formed along a wave guiding direction of the flexible optical waveguide.. .
Fujitsu Limited

Focus detection apparatus, controlling the same, and storage medium

A focus detection apparatus comprises a line sensor including a photoelectric conversion element and an integrating capacitor, a storage unit configured to store information concerning a defective pixel, a first comparison unit configured to compare a signal from the defective pixel with a predetermined threshold, a switching unit configured to switch between a first accumulation mode and a second accumulation mode, and a control unit configured to control the switching unit so as to set the line sensor in the first accumulation mode if the first comparison unit determines that a signal from the defective pixel is not more than the predetermined threshold and set the line sensor in the second accumulation mode if the first comparison unit determines that a signal from the defective pixel is larger than the threshold.. .
Canon Kabushiki Kaisha

Solid-state image sensor and electronic information device

Provided are a solid-state image sensor and an electronic information device capable of effectively reducing the occurrence of pseudo-smear by adopting a simple configuration and operation. A solid-state image sensor 1 includes multiple pixel circuit units pn and pob, each including a photoelectric conversion unit that generates charges via photoelectric conversion and accumulates the generated charges, a floating diffusion unit that retains charges transferred from the photoelectric conversion unit, a transfer unit through which charges accumulated by the photoelectric conversion unit are transferred to the floating diffusion unit, an output unit that outputs a signal corresponding to the amount of charges retained by the floating diffusion unit, and a reset unit that discharges charges retained by the floating diffusion unit to the outside; and an a/d conversion unit 23 that acquires a signal output from the output unit and performs a/d conversion on the acquired signal using a set gain.
Sharp Kabushiki Kaisha



Electric Conversion topics:
  • Electric Conversion
  • Photoelectric Conversion
  • Semiconductor
  • Electronic Device
  • Semiconductor Material
  • Surfactant
  • Conversion Efficiency
  • Conductive Layer
  • Transport Layer
  • Sensitizer
  • Silicon Oxynitride
  • Incident Light
  • Semiconductor Substrate
  • Image Processing


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    This listing is a sample listing of patent applications related to Electric Conversion for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Electric Conversion with additional patents listed. Browse our RSS directory or Search for other possible listings.


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