|| List of recent Duc-related patents
| Use of plant-derived dhar or mdhar gene as a modulator for crop yield and environmental stress|
The present invention relates to a method for increasing crop yield or enhancing resistance of a plant to environmental stress by using dhar (dehydroascorbate reductase) gene derived from rice (oryza sativa) or mdhar (monodehydroascorbate reductase) derived from chinese cabbage (brassica rapa), a method of producing a transgenic plant with increased crop yield or enhanced resistance to environmental stress by using dhar gene or mdhar gene, a transgenic plant with increased crop yield or enhanced resistance to environmental stress that is produced by the aforementioned method, and a seed thereof, and a composition for increasing crop yield or enhanced resistance to environmental stress containing dhar gene or mdhar gene.. .
| Device and method for providing content by accessing content stream in hybrid 3d tv, and device and method for reproducing content|
A content providing apparatus and method, and a content reproduction apparatus and method for accessing a content stream in a hybrid three-dimensional television (3dtv) are disclosed. The content providing apparatus may include a content stream generation unit to generate a first content stream corresponding to a reference image and a second content stream corresponding to a supplementary image, a descriptor generation unit to generate a descriptor associated with the first content stream and the second content stream, and a data transmission unit to transmit the first content stream, the second content stream, and the descriptor to a content reproduction apparatus..
| Adaptive task scheduling of hadoop in a virtualized environment|
A control module is introduced to communicate with an application workload scheduler of a distributed computing application, such as a job tracker node of a hadoop cluster, and with the virtualized computing environment underlying the application. The control module periodically queries for resource consumption data, such as cpu utilization, and uses the data to calculate how mapreduce task slots should be allocated on each task node of the hadoop cluster.
| Cell and macro placement on fin grid|
A die includes at least one standard cell, which includes a first boundary and a second boundary opposite to the first boundary. The first boundary and the second boundary are parallel to a first direction.
| Detection and removal of self-aligned double patterning artifacts|
Mask design techniques for detection and removal of undesirable artifacts in sadp processes using multiple patterns are disclosed. Artifacts or spurs result from lithographic and chemical processing of semiconducting wafers.
| Systems and methods for content analysis to support navigation and annotation in expository videos|
Online educational videos are often difficult to navigate. Furthermore, most video interfaces do not lend themselves to note-taking.
| Semiconductor memory devices including error correction circuits and methods of operating the semiconductor memory devices|
A memory controller includes a controller input/output circuit configured to output a first command to read first data, and output a second command to read an error corrected portion of the first data. A memory device includes: an error detector, a data storage circuit and an error correction circuit.
| Semiconductor memory|
According to one embodiment, a semiconductor memory includes a memory cell unit, an encoding circuit that generates a first parity and a second parity for data, and a decoding circuit that performs error correction by using the data, the first parity, and the second parity, the first parity is generated by using a first generation polynomial for the data, the second parity is generated by using a second generation polynomial for the input data and the first parity, the second generation polynomial is selected based on the first generation polynomial, the data and the first parity is output to the outside, and the second parity is not output to the outside.. .
| Semiconductor memory device|
A crc code is generated from an original data, a bch code is generated with respect to the original data and the crc code, and the original data, the crc code, and the bch code are recorded in pages selected from different planes of a plurality of memory chips. An rs code is generated from the original data across pages, a crc code is generated with respect to the rs code, a bch code is generated with respect to the rs code and the crc code, and the rs code, the crc code, the bch code are recorded in a memory chip different from a memory chip including the original data.
| Semiconductor memory device|
According to one embodiment, a semiconductor memory device includes memory cells each given one of threshold voltages to store data, and a controller configured to use read voltages to determine threshold voltages of the memory cells. The controller is configured to use voltages over a window to read data from the memory cells to determine distribution of the threshold voltages of the memory cells to estimate a read voltage.
| Semiconductor test device and semiconductor test method|
There is provided a semiconductor test device, including: a test information acquisition unit acquiring test information; a test information conversion unit converting the acquired test information into test vector information including a plurality of test vectors; and a test signal generation unit generating a test input signal based on the test vector information.. .
| Semiconductor integrated circuit with bist circuit|
According to an embodiment, a semiconductor integrated circuit includes a memory, a bypass circuit, a first selection unit, a compression unit, and a comparison unit. The bypass circuit bypasses the test signal to output a bypass signal.
| Electronic device and method for operating electronic device|
An electronic device comprising a semiconductor memory unit that may a variable resistance element configured to be changed in its resistance value in response to current flowing through both ends thereof; an information storage unit configured to store switching frequency information corresponding to a switching frequency which minimizes an amplitude of a voltage to be applied to both ends of the variable resistance element to change the resistance value of the variable resistance element and switching amplitude information corresponding to a minimum amplitude; and a driving unit configured to generate a driving voltage with the switching frequency and the minimum amplitude in response to the switching frequency information and the switching amplitude information and apply the driving voltage to both ends of the variable resistance element.. .
| Electronic device|
An electronic device comprising a semiconductor memory unit that may include a cell array including a plurality of storage cells; a first line connected to one ends of the plurality of storage cells; a second line connected to the other ends of the plurality of storage cells; a first driver connected to one end of the first line at a first contact location on one side of the cell array, and configured to apply a first electrical signal to the one end of the first line; and a second driver connected to one end of the second line at a second contact location on a side of the cell array opposing the side of the cell array where the first contact location is located, and configured to apply a second electrical signal to the one end of the second line.. .
| Electronic devices having semiconductor magnetic memory units|
An electronic device comprising a semiconductor memory unit that includes a resistance variable element configured to be changed in a resistance value according to a value of data stored therein; a first reference resistance element having a first resistance value; a second reference resistance element having a second resistance value larger than the first resistance value; and a comparison unit configured to receive a voltage corresponding to the resistance value of the resistance variable element through a first input terminal and a second input terminal thereof, a voltage corresponding to the first resistance value of the first reference resistance element through a third input terminal, and a voltage corresponding to the second resistance value of the second reference resistance element through a fourth input terminal, the comparison unit configured to output a result of comparing inputs to the first input terminal and the second input terminal and inputs to the third input terminal and fourth input terminal.. .
| Semiconductor memory device|
According to one embodiment, a semiconductor memory device includes: string units including a plurality of memory cells stacked above a semiconductor substrate; and a control circuit configured to perform an erase operation per a block, the block including the string units, the control circuit being configured to perform an erase verify operation per string unit.. .
| Controller, semiconductor storage device and method of controlling data writing|
According to one embodiment, a memory controller includes a mode selection part that selects one of a mlc-mode and a slc-mode, after a write command is decoded by a command decode part, and a write part that executes a data writing to a storage memory by using one of the mlc-mode and the slc-mode selected by the mode selection part. The mode selection part is configured to check whether a first data wrote from a host to a buffer memory is a time-continuous data that is wrote continuously during a predetermined period, execute the data writing of a second data from the buffer memory to the storage memory in the mlc-mode, when the first data is the time-continuous data, and execute the data writing of the second data from the buffer memory to the storage memory in the slc-mode, when the first data is not the time-continuous data..
| Semiconductor memory device capable of testing signal integrity|
According to one embodiment, a semiconductor memory device includes a memory cell array, a first buffer, a second buffer, an interface unit and a controller. Data is transferred between the interface unit and the first buffer.
| Information-provision control method, information reproduction system, information-provision apparatus, information reproduction apparatus and information-presentation control program|
When the information-provision apparatus is providing an audio signal to the specific information reproduction apparatus, the user enters an operation input to the specific information reproduction apparatus to switch processing to reproduce an audio content from the specific information reproduction apparatus to another information reproduction apparatus. In this case, the specific information reproduction apparatus requests the information-provision apparatus to start an operation of providing the audio content to the other information reproduction apparatus specified in the operation input as an apparatus to newly reproduce the audio content.
| System and method for collecting and assessing wildfire hazard data*|
A computer-implemented system for collecting and assessing wildfire hazard data comprising a mobile device with an application installed on the mobile device for on-site collection of wildfire hazard data and a wildfire risk assessment provider server. The data collected on the mobile device is merged with data at the wildfire risk assessment provider server to produce underwriting risk scores and reports for insurers, education-aimed recommendations and reports for policyholders, wildfire risk alerts for mobile device application users, strategies for client-to-policyholder wildfire awareness communication, and strategies for wildfire response teams used to drive pre-suppression and active fire actions.
| Physician prescription processing|
Physicians providing education about prescriptions, storing this information for patient access, and adjudicating prescriptions can be compensated by patients for their efforts avoiding stark and anti-kickback laws if the compensation is paid separately from a prescription. Additional compensation can be paid to physicians from pharmacies for patient education and adjudication.
| Speech recognition device and method, and semiconductor integrated circuit device|
A semiconductor integrated circuit device for speech recognition includes a conversion candidate setting unit that receives text data indicating words or sentences together with a command and sets the text data in a conversion list in accordance with the command; a standard pattern extracting unit that extracts, from a speech recognition database, a standard pattern corresponding to at least a part of the words or sentences indicated by the text data that is set in the conversion list; a signal processing unit that extracts frequency components of an input speech signal and generates a feature pattern indicating distribution of the frequency components; and a match detecting unit that detects a match between the feature pattern generated from at least a part of the speech signal and the standard pattern and outputs a speech recognition result.. .
| Systems and methods for dynamic re-configurable speech recognition|
Speech recognition models are dynamically re-configurable based on user information, background information such as background noise and transducer information such as transducer response characteristics to provide users with alternate input modes to keyboard text entry. The techniques of dynamic re-configurable speech recognition provide for deployment of speech recognition on small devices such as mobile phones and personal digital assistants as well environments such as office, home or vehicle while maintaining the accuracy of the speech recognition..
| Compact opc model generation using virtual data|
A method, system or computer usable program product for building a fast lithography opc model that predicts semiconductor manufacturing process outputs on silicon wafers including providing a first principles model of the semiconductor manufacturing process, providing a set of empirical data for storage in memory, utilizing a processor to develop a rigorous model for a process condition from the first principles model and the set of empirical data, and utilizing the processor running the rigorous model to generate emulated data for the process condition to develop a virtual model for predicting the semiconductor manufacturing process outputs.. .
| Characterization of interface resistance in a multi-layer conductive structure|
Disclosed is a test structure that can be used to characterize a specific interface resistance within a multi-layer conductive structure, such as a multi-layer ohmic contact. In the test structure first and second transmission line model (tlm) structures both incorporate a row of essentially identical contact pads separated by spaces with progressively increasing lengths.
| Information processing apparatus, information processing method, and program|
There is provided an information processing apparatus including: a link information acquisition unit which acquires link information obtained by associating a reproduction location of contents with geographic information regarding geography associated with a story of the contents at the reproduction location; and a display control unit which performs control for displaying a geographic image based on the geographic information associated with the story of the contents being reproduced, based on the acquired link information and a reproduction location of the contents being reproduced.. .
| Anomaly detection method, computer-readable non-transitory storage medium, and anomaly detection apparatus|
In accordance with an embodiment, an anomaly detection method includes acquiring coordinate data of defects or particles generated on a wafer during a semiconductor manufacturing process, calculating an eberhardt's index from the acquired data, calculating a first probability point, comparing the calculated eberhardt's index with the first probability point, and judging presence/absence in state of a spatial point distribution relative to the defects or the particles. The first probability point is calculated based on a sample distribution of the eberhardt's index..
| Medical devices for use along the biliary and/or pancreatic tract|
Medical devices and method for making and using the same are disclosed. An example medical device may include implantable medical device for use along the biliary and/or pancreatic tract.
| Ultrasonic surgical instruments|
In one general aspect, various embodiments are directed to an ultrasonic surgical instrument that comprises a transducer configured to produce vibrations along a longitudinal axis at a predetermined frequency. In various embodiments, an ultrasonic blade extends along the longitudinal axis and is coupled to the transducer.
| Catheter assembly for treatment of hypertrophic tissue|
The present invention teaches a new apparatus and process of selective ablation of the hypertrophic tissue to treat hypertrophic cardiomyopathy. The apparatus and process involve percutaneously delivering radiofrequency energy through a manipulable catheter to irradiate the thickened septum to reduce tissue volume of the septum and enhance myocardial function.
| Apparatus and methods for accessing the lymphatic system|
Systems and methods are provided for performing a medical procedure within a patient's body that involves a thoracic duct including an ostium communicating with the patient's venous system. An apparatus is provided that includes a catheter including proximal and distal ends and a lumen extending therebetween.
| Method and apparatus for reducing intraocular pressure of an eye|
A method and shunt device for treating glaucoma includes positioning a first end portion of a tube body into the retrobulbar space of an eye. The method also includes positioning a second end portion of the tube body into the anterior chamber of the eye.
| Pressure sensing pad, method of making the same, pressure sensing system, and pressure map display|
A pressure sensing pad or mat comprises a piezoresistive layer, a top electrically conductive layer comprising a plurality of electrically conductive top strips extending in a first direction along one side of the piezoresistive layer, a bottom electrically conductive layer comprising a plurality of electrically conductive bottom strips extending in a second direction, nonparallel to the first direction, along the other side of the piezoresistive layer, and top and bottom adhesive layers holding the top and bottom strips against the piezoresistive layer so as to inhibit relative displacement of the strips relative to the piezoresistive layer and relative to each other. Also disclosed are a method of manufacturing the pressure sensor pad, a pressure sensing system that employs the a sensor mat, and a pressure map display for displaying a pressure distribution of an object resting on the pressure sensing mat..
| Imaging devices with an array of transducers and methods of manufacture and use|
A medical imaging assembly includes an elongated catheter having a connector at the proximal end; an array of transducers on the distal end of the catheter; conductors electrically coupled to the array of transducers and in electrical communication with the connector of the catheter; and a control unit coupleable to the catheter to send and receive electrical signals between the control unit and the array of transducers through the connector of the catheter. The control unit has a processor to execute instructions including 1) selecting a first subset of m transmitting transducers and a second subset of n receiving transducers from the array of transducers, where n>m; and 2) for each of at least n transmit/receive cycles, a) directing the first subset of m transmitting transducers to transmit an acoustic signal; and b) directing the second subset of n receiving transducers to receive corresponding echo signals..
| Delta delay approach for ultrasound beamforming on an asic|
Systems are disclosed for ultrasound beamforming on an application specific integrated circuit (asic). In certain embodiments, the system includes an ultrasound probe that includes a plurality of transducer elements electrically coupled to an asic.
| Excitation schemes for low-cost transducer arrays|
A device images time-wise in parallel using transducer elements of a group (428, 432, 436, 440). In some embodiments, the elements are of a current group and imaging is time-wise sequential by group.
| Transesophageal ultrasound using a narrow probe|
Transesophageal echocardiography is implemented using a miniature transversely oriented transducer that is preferably small enough to fit in a 7.5 mm diameter probe, and most preferably small enough to fit in a 5 mm diameter probe. Signal processing techniques improve the depth of penetration to the point where the complete trans-gastric short axis view of the left ventricle can be obtained, despite the fact that the transducer is so small.
| Method and system for pda-based ultrasound|
A method and system are disclosed for a compact, inexpensive ultrasound system using an off-the--shelf personal digital assistant (pda) device interfacing to a hand-held probe assembly through a standard digital interface. The hand-held probe assembly comprises a detachable transducer head attached to a beamforming module that performs digital beamforming.
| Implantable medical device for minimally-invasive insertion|
In one aspect, containment devices are provided that include a microchip element having one or more containment reservoirs that are configured to be electrically activated to open; an electronic printed circuit board (pcb) or a silicon substrate positioned adjacent to the microchip element; one or more electronic components associated with the microchip element or the pcb/silicon substrate; and a first inductive coupling device associated with the microchip element or the pcb/silicon substrate, wherein the first inductive coupling device is in operable communication with the one or more electronic components. In another aspect, implantable drug delivery devices are provided that include a body housing at least one drug payload for actively controlled release, wherein the ratio of the volume of the at least one drug payload to the total volume of the implantable drug delivery device is from about 75 μl/cc to about 150 μl/cc..
| Topical antiandrogen therapy for the treatment of becker's nevus|
This invention relates to the treatment of beckers nevus with antiandrogenic topical agents, including 5-alpha reductase inhibitors, non-steroidal antiandrongens and steroidal antiandrogens.. .
| Gamma-diketones as wnt/beta -catenin signaling pathway activators|
The present disclosure provides γ-diketones or analogs thereof, that activate wnt/β-catenin signaling and thus treat or prevent diseases related to signal transduction, such as osteoporosis and osteoarthropathy; osteogenesis imperfecta, bone defects, bone fractures, periodontal disease, otosclerosis, wound healing, craniofacial defects, oncolytic bone disease, traumatic brain injuries or spine injuries, brain atrophy/neurological disorders related to the differentiation and development of the central nervous system, including parkinson's disease, strokes, ischemic cerebral disease, epilepsy, alzheimer's disease, depression, bipolar disorder, schizophrenia; otic disorders like cochlear hair cell loss; eye diseases such as age related macular degeneration, diabetic macular edema or retinitis pigmentosa and diseases related to differentiation and growth of stem cell, such as hair loss, hematopoiesis related diseases and tissue regeneration related diseases.. .
| Pyrrolopyrimidine compounds for the treatment of cancer|
The ectopic expression of mer receptor tyrosine kinase (mer) has been identified as a tumor cell survival gene product in acute lymphoblastic leukemia (all) cells and a potential cause of all chemoresistance. Hence, we investigated whether the development of small molecule mer inhibitors was possible.
| Compositions and methods for co-amplifying subsequences of a nucleic acid fragment sequence|
The present invention is related to genomic nucleotide sequencing. In particular, the invention describes a single reaction method to co-amplify multiple subsequences of a nucleic acid fragment sequence (i.e., for example, at least two read pairs from a single library insert sequence).
| Photo based game development system and products|
An entertainment, educational and merchandizing method for creating games through computer-based integration of user-uploaded photos and textual information into board and card games that feature such user-uploaded materials, and generate, from administrator-hosted templates, games and entertainment devices involving identification, reference and/or query based-response to such materials.. .
| Handheld electronic device with cable grounding|
A handheld electronic device may be provided that contains a conductive housing and other conductive elements. The conductive elements may form an antenna ground plane.
| Method and apparatus for voice conferencing|
A method, apparatus computer program product provide acoustical echo control for distributed voice conferencing including distributed voice conferencing that utilizes spatial audio processing. In the context of a method, a reference signal and one or more other reference signals may be received by a mobile terminal.
| Polishing pad and method for producing same|
Provided are: a polishing pad which is capable of alleviating a scratch problem that occurs when a conventional hard (dry) polishing pad is used, and which is excellent in polishing rate and polishing uniformity and is usable not only for primary polishing but also for finish polishing; and a method for producing the polishing pad. The polishing pad is for polishing a semiconductor device and includes a polishing layer having a polyurethane-polyurea resin molded body containing cells of a substantially spherical shape.
| Chitosan and/or chitin composite having reinforced physical properties and use thereof|
The present invention relates to a composite including chitosan and/or chitin and a catechol-based compound, an organic reinforcing material composition including the composite, a product manufactured by using the organic reinforcing material composition, and a method for preparing a chitosan and/or chitin composite with improved strength, including the step of adding the catechol-based compound to chitosan and/or chitin. The chitosan and/or chitin composite including the catechol-based compound is advantageous in that it is able to maintain high strength in a wet-swollen state by improving the problem of strength reduction due to moisture, compared to the composites containing no catechol-based compound..
| Method of manufacturing semiconductor device|
A method of manufacturing a semiconductor device according to the present invention includes the steps of (b) forming, on a back face of a dummy substrate and back faces of a plurality of semiconductor substrates, inorganic films having such thicknesses as to be resistant to a temperature of a thermal oxidizing treatment or a heat treatment and to sufficiently decrease an amount of oxidation or reducing gaseous species to reach the back faces of the dummy substrate and the plurality of semiconductor substrates, (c) disposing the dummy substrate and the plurality of semiconductor substrates in a lamination with surfaces turned in the same direction at an interval from each other, and (d) carrying out a thermal oxidizing treatment or post annealing over the surfaces of the semiconductor substrates in an oxidation gas atmosphere or a reducing gas atmosphere after the steps (b) and (c).. .
| Method of forming dielectric films, new precursors and their use in semiconductor manufacturing|
Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of zr(mecp)(nme2)3, zr(etcp)(nme2)3, zrcp(nme2)3, zr(mecp)(netme)3, zr(etcp)(netme)3, zrcp(netme)3, zr(mecp)(net2)3, zr(etcp)(net2)3, zrcp(net2)3, zr(ipr2cp)(nme2)3, zr(tbu2cp)(nme2)3, hf(mecp)(nme2)3, hf(etcp)(nme2)3, hfcp(nme2)3, hf(mecp)(netme)3, hf(etcp)(netme)3, hfcp(netme)3, hf(mecp)(net2)3, hf(etcp)(net2)3, hfcp(net2)3, hf(ipr2cp)(nme2)3, hf(tbu2cp)(nme2)3, and mixtures thereof; and depositing the dielectric film on the substrate.. .
| Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium|
A method of manufacturing a semiconductor device is disclosed. The method includes forming a film containing a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times.
| Semiconductor device manufacturing method and substrate processing system|
A semiconductor device manufacturing method includes forming a first high-k insulating film on a processing target object; performing a crystallization heat-treatment process on the first high-k insulating film at a temperature equal to or higher than about 650° c. For a time less than about 60 seconds; and forming, on the first high-k insulating film, a second high-k insulating film containing a metal element having an ionic radius smaller than that of a metal element of the first high-k insulating film and having a relative permittivity higher than that of the first high-k insulating film..
| Integrated platform for improved wafer manufacturing quality|
The present disclosure relates to a method and apparatus for performing a dry plasma procedure, while mitigating internal contamination of a semiconductor substrate. In some embodiments, the apparatus includes a semiconductor processing tool having a dry process stage with one or more dry process elements that perform a dry plasma procedure on a semiconductor substrate received from an input port.
| Semiconductor process|
A semiconductor process includes the following steps. A wafer on a pedestal is provided.
| Methods of forming layer patterns of a semiconductor device|
A method of manufacturing a layer pattern of a semiconductor device, the method including forming an anti-reflective coating (arc) layer on an etching object layer such that the arc layer includes a polymer having an imide group; forming a photoresist pattern on the arc layer; wet etching portions of the arc layer exposed by the photoresist pattern to form an arc layer pattern; and etching the etching object layer using the photoresist pattern as an etch mask to form the layer pattern.. .
| Pattern formation method and method for manufacturing semiconductor device|
According to one embodiment, a pattern formation method includes forming a first mask layer including a first and a second concave pattern on a first surface of a substrate. The method can include providing a protection film in the first concave pattern.
| Semiconductor fabrication method using stop layer|
A method of making a semiconductor assembly including the steps of: (i) providing an initial-state assembly including: (a) a fin layer, and (b) a hard mask layer located on top of at least a portion of the fin layer; (ii) performing a first material removal on the initial-state assembly, by cmp, to yield a second-state assembly; and (iii) performing a second material removal on the second-state assembly to yield a third-state assembly. In the first material-removal step: (i) any remaining portion of the soft sacrificial layer is removed, (ii) a portion of the fin layer is removed, and (iii) the lower portion of the hard mask layer is used as a stop layer for the second material removal..
| Method of manufacturing semiconductor device|
To improve a semiconductor device having a nonvolatile memory. A first misfet, a second misfet, and a memory cell are formed, and a stopper film made of a silicon oxide film is formed thereover.
| Pattern forming method and method of manufacturing semiconductor device|
According to one embodiment, a core material is ejected onto an object using an inkjet method to form a core pattern on the object, a mask pattern is formed on the object so as to embed the core pattern, and the core pattern which is embedded in the mask pattern is removed.. .
| Method for forming semiconductor device|
A method for forming a semiconductor device is provided, which may include: providing an interlayer dielectric layer, a metal layer formed on the interlayer dielectric layer, an etch stop layer formed on the metal layer, and a first opening extending through the etch stop layer and the metal layer, wherein the interlayer dielectric layer is exposed from the first opening; forming a protecting layer on the sidewall of the first opening to cover the metal layer; after forming the protecting layer, forming a second opening by etching a portion of the interlayer dielectric layer; and forming an isolating layer by filling up the second opening, wherein the isolating layer includes an air gap. The semiconductor device is more stable in performance..
| Method of manufacturing semiconductor device|
A metal-containing film capable of adjusting a work function is formed. A first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and an amino group are alternately supplied onto a substrate having a high-k dielectric film to form a composite metal nitride film on the high-k dielectric film..
| Semiconductor device manufacturing method|
A semiconductor device manufacturing method includes forming a dielectric film on a semiconductor substrate; performing a heat treatment on the dielectric film; forming an electrode on a first region of the dielectric film; irradiating an ionized gas cluster to a second region of the dielectric film where the electrode is not formed; and removing the second region of the dielectric film where the ionized gas cluster is irradiated by a wet etching after the irradiating of the ionized gas cluster.. .
| Method of forming a high quality interfacial layer for a semiconductor device by performing a low temperature ald process|
One illustrative method disclosed herein includes performing an atomic layer deposition (ald) process at a temperature of less than 400° c. To deposit a layer of silicon dioxide on a germanium-containing region of semiconductor material and forming a gate structure of a transistor device above the layer of silicon dioxide..
| Photosensitive resin composition and method for producing semiconductor device|
Disclosed is a photosensitive resin composition which exhibits positive or negative photosensitivity and is used as a mask in an ion implantation step, the photosensitive resin composition including, as a resin, (a) a polysiloxane. The photosensitive resin composition of the present invention has high heat resistance and is capable of controlling a pattern shape, and also has excellent ion implantation mask performance, thus enabling application to a low-cost high-temperature ion implantation process..
| Method of manufacturing nonvolatile semiconductor memory device|
According to one embodiment, a method includes forming first and second gate patterns each including a structure stacked in order of a first insulating layer, a floating gate layer, a charge trap layer, a second insulating layer and a dummy layer on a semiconductor layer, implanting impurities in the semiconductor layer by an ion implantation using the first and second gate patterns as a mask, forming a third insulating layer on the semiconductor layer, the third insulating layer covering side surfaces of the first and second gate patterns, and forming first and second concave portions, the first concave portion formed by removing the dummy layer of the first gate pattern, the second concave portion formed by removing the dummy layer, the second insulating layer, the charge trap layer and the floating gate layer of the second gate pattern.. .
| Semiconductor films on sapphire glass|
A method is disclosed for growing large grain to single crystalline semiconductor films on inexpensive glass substrates. The method comprises deposition of semiconductor films from a eutectic melt on sapphire glass.
| Methods of transferring semiconductor elements and manufacturing semiconductor devices|
The present disclosure relates to a method of transferring semiconductor elements from a non-flexible substrate to a flexible substrate. The present disclosure also relates to a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements.
| Coating adhesives onto dicing before grinding and micro-fabricated wafers|
A method for preparing a semiconductor wafer into individual semiconductor dies uses both a dicing before grinding step and/or via hole micro-fabrication step, and an adhesive coating step.. .
| Semiconductor device manufacturing method and manufacturing apparatus|
According to one embodiment, a semiconductor device manufacturing method includes: bonding a first wafer and a second wafer to each other, to form a stack; rubbing a film attached with a fill material in a thin-film shape into a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material; and thinning the first wafer.. .
| Methods of forming strained-semiconductor-on-insulator device structures|
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.. .
| Method for bonding semiconductor devices|
A method of attaching first and second semiconductor devices to one another includes applying plating gel over a surface of a first semiconductor device, positioning bonding regions of a second semiconductor device in contact with the plating gel on corresponding bonding regions on the first semiconductor device, and reacting at least some the plating gel to bond the second semiconductor device to the first semiconductor device.. .
| Strained isolation regions|
A method of forming an isolation trench having localized stressors is provided. In accordance with embodiments of the present invention, a trench is formed in a substrate and partially filled with a dielectric material.
| Method of fabricating finfets|
The disclosure relates to a method of fabricating a semiconductor device including forming a patterned hardmask layer over a substrate comprising a major surface. The method further includes forming a plurality of first trenches and a plurality of second trenches performed at an electrostatic chuck (esc) temperature between about 90° c.
| Phase change memory device having self-aligned bottom electrode and fabrication method thereof|
A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor memory device includes an access device formed in a pillar shape on a semiconductor substrate, a first conductive layer formed over the access device, a protection layer formed on an edge of the first conductive layer to a predetermined thickness, and a lower electrode connected to the first conductive layer..
| Method for fabricating semiconductor device|
A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a iv group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer..
| Method for manufacturing a semiconductor device|
A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer.
| Semiconductor process|
A semiconductor process includes the following step. A stacked structure is formed on a substrate.
| Method of manufacturing a super-junciton semiconductor device|
A method of manufacturing a super-junction semiconductor device is disclosed that allows forming a high concentration layer with high precision and improves the trade-off relationship between the eoff and the dv/dt using a trench embedding method. The method comprises a step of forming a parallel pn layer using a trench embedding method and a step of forming a proton irradiated layer in the upper region of the pn layer.
| Reducing wafer distortion through a high cte layer|
Provided is a method of fabricating a semiconductor device. The method includes providing a silicon substrate having opposite first and second sides.
| Method of manufacturing a semiconductor device|
After forming a first film over the main surface of a semiconductor substrate, the first film is patterned, thereby forming a control gate electrode for a non-volatile memory, a dummy gate electrode, and a first film pattern. Subsequently, a memory gate electrode for the non-volatile memory adjacent to the control gate electrode is formed.
| Method for manufacturing semiconductor device and semiconductor device|
A manufacturing method includes forming a fin-shaped silicon layer on a silicon substrate, forming a first insulating film around the fin-shaped silicon layer, and forming a pillar-shaped silicon layer on the fin-shaped silicon layer; forming diffusion layers in an upper portion of the pillar-shaped silicon layer, an upper portion of the fin-shaped silicon layer, and a lower portion of the pillar-shaped silicon layer; forming a gate insulating film, a polysilicon gate electrode, and a polysilicon gate wiring; forming a silicide in an upper portion of the diffusion layer in the upper portion of the fin-shaped silicon layer; depositing an interlayer insulating film, exposing the polysilicon gate electrode and the polysilicon gate wiring, etching the polysilicon gate electrode and the polysilicon gate wiring, and then depositing a metal to form a metal gate electrode and a metal gate wiring; and forming a contact.. .
| Three dimensional non-volatile storage with asymmetrical vertical select devices|
A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate.
| Method for fabricating nonvolatile memory structure|
A nonvolatile memory structure includes a semiconductor substrate having thereon a first oxide define (od) region, a second od region and a third od region arranged in a row. The first, second, and third od regions are separated from one another by an isolation region.
| Tunable schottky diode with depleted conduction path|
A method of fabricating a schottky diode having an integrated junction field-effect transistor (jfet) device includes forming a conduction path region in a semiconductor substrate along a conduction path of the schottky diode. The conduction path region has a first conductivity type.
| High electron mobility transistor and method of forming the same|
A method of forming a semiconductor structure, the method includes epitaxially growing a second iii-v compound layer on a first iii-v compound layer. A carrier channel is located between the first iii-v compound layer and the second iii-v compound layer.
| Semiconductor radio frequency switch with body contact|
The present disclosure relates to a radio frequency (rf) switch that includes multiple body-contacted field effect transistor (fet) elements coupled in series. The fet elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die.
| Reducing wafer distortion through a high cte layer|
Provided is a method of fabricating a semiconductor device. The method includes providing a silicon substrate having opposite first and second sides.
| Method for preparing semiconductor devices applied in flip chip technology|
A method for preparing semiconductor devices in a flip chip process comprises forming deep grooves surrounding each of the semiconductor chips; depositing a first plastic package material to form a first plastic package layer covering front surface of the semiconductor wafer and filling the deep grooves; depositing a metal layer at back surface of the semiconductor wafer after grinding; grinding an outermost portion of the metal layer thus forming a ring area located at back surface around edge of the semiconductor wafer not covered by the metal layer; cutting the first plastic package layer, the semiconductor wafer, the metal layer and the first plastic package material filled in the deep grooves along a straight line formed by two ends of each of the deep grooves filled with the first plastic package material; and picking up the semiconductor devices and mounting on a substrate without flipping the semiconductor devices.. .
| Multi-chip package and method of manufacturing the same|
A multi-chip package may include a package substrate, a first semiconductor chip, a second semiconductor chip and a supporting member. The first semiconductor chip may be arranged on an upper surface of the package substrate.
| Method of fabricating semiconductor package|
A method of fabricating a semiconductor package includes providing a wafer which includes an upper area having through silicon vias (tsvs) and a lower area not having the tsvs; mounting a semiconductor chip on the upper area of the wafer; forming a passivation layer to a predetermined thickness to cover the semiconductor chip; exposing the tsvs by removing the lower area of the wafer in a state where no support is attached to the wafer; and exposing a top surface of the semiconductor chip by partially removing the passivation layer.. .
| Method for manufacturing semiconductor device|
Electrical characteristics of transistors using an oxide semiconductor are greatly varied in a substrate, between substrates, and between lots, and the electrical characteristics are changed due to heat, bias, light, or the like in some cases. In view of the above, a semiconductor device using an oxide semiconductor with high reliability and small variation in electrical characteristics is manufactured.
| Solid-state imaging device, method of manufacturing same, and electronic apparatus|
A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain.
| Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same|
The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group..
| Method for aligning a biochip|
A method of aligning a semiconductor chip includes forming a semiconductor chip with a light-activated circuit including at least one photosite, positioning the semiconductor chip relative to a device, and illuminating the positioned semiconductor chip. The method further includes generating an rf signal with an rf circuit based upon illumination of the at least one photosite, and determining the position of the photosite with respect to the device based upon the generated rf signal..
| Leadframe, semiconductor device, and method of manufacturing the same|
A method of manufacturing a semiconductor device includes mounting at least one of a first semiconductor chip and a second semiconductor chip over a die pad of a leadframe, and inspecting a mounting position of at least one of the first semiconductor chip and the second semiconductor chip, wherein the leadframe includes first mark formed to the die pad, for indicating a first mounting region for the first semiconductor chip, and second mark formed to the die pad, for indicating a second mounting region for the second semiconductor chip, the first mark is different from the second mark, in at least either one of size and geometry, wherein, in the inspecting a mounting position of at least one of the first semiconductor chip and the second semiconductor chip, a mounting position of the first semiconductor chip is inspected when the first semiconductor chip is mounted.. .
| Reflective mask, method of monitoring the same, and method of manufacturing semiconductor device|
According to one embodiment, provided is a reflective mask having a substrate, a reflection layer that reflects euv light formed above the substrate, and an absorption layer that absorbs the euv light formed above the reflection layer. The reflective mask further includes a monitor pattern monitoring an attachment amount of contamination attached during exposure..
| Compositions and methods for diagnosing hypercoagulability and hypocoagulability|
The present invention provides a method for diagnosing hypercoagulability associated with carbon monoxide exposure in a subject. The method comprises obtaining a plasma sample from the subject, dividing the sample into at least two portions, and determining the clot strength of the first portion.
| Apparatus and method for a lysis of a sample, in particular for an automated and/or controlled lysis of a sample|
The present invention provides an apparatus and a method for a lysis procedure, in particular for an automated and/or controlled lysis procedure of a sample, in particular a biological sample. The apparatus comprises at least one rotation disc (31), at least one vial holder (90) which is configured to receive a vial (100), wherein the vial holder (90) is arranged on the disc (31), at least one driving device (20) which is configured to rotate the disc (31) and the vial holder (90), at least one heating device (60) which is configured to heat the sample to a determined incubation temperature, and—at least one control device (70) which is configured to control the driving device (20) and/or the heating device (60) by means of a timing and/or step control, and/or—at least one transmitting device (80) for inductive coupling for energy and signal transmission, which is configured to transmit the energy for heating to the heating device (60), and/or—wherein the driving device (20) is configured to rotate the disc (31) in a first direction (a1) and/or with a first speed, and to rotate the vial holder (90) in a second direction (a3) and/or with a second speed.
| Nitrite-reductase (nirb) as potential anti-tubercular target and a method to detect the severity of tuberculosis disease|
The present invention discloses functional nitrite reductase as a potential drug target for anti-tubercular drug development. The present invention also relates to the development of an easy method for identification of nitrite in clinical samples as well as its correlation with the severity of the disease.
| Drug, surgical, and medical education processes|
A national standardized protocol developed by interfacing the fda, medical societies, pharmaceutical companies, surgical companies, and patient focus groups for education patients about medications and surgical procedures which can be modified as new risks are discovered is desirable. Linking patient metadata to received information and then being able to identify patients about new risks and communicate to each patient is also desirable.
| System for enabling a visually impaired or blind person to use an input device having at least one key|
System for enabling a visually impaired or blind person to use an input device having at least one key, comprising: at least one tactile sensor array, in particular a pressure sensor array, attachable to a fingertip of a visually impaired or blind person for acquiring a pressure distribution image of a key slightly touched by a finger of said person when attached to said finger, a pressure distribution image processing and character recognition unit that is connected to said tactile sensor array for processing said pressure distribution image and for recognizing the key label of the touched key and an audio output device that is connected to said unit for outputting and acoustic reproduction of said key label.. .
| Radiation source and light guiding device|
The invention relates to a radiation source, in particular a light curing device, for the polymerization of dental materials, comprising a light conductor and a light generation device which has at least two light sources, preferably semiconductor light sources, in particular light diodes, and the radiation of which is bundled by a reflector and fed into the light conductor. The light sources differ from one another with respect to their light color and/or their emission spectrum and are controllable separately for changing the light color and/or the emission spectrum and/or the spectral radiant power of the radiation emitted.
| Positive tone organic solvent developed chemically amplified resist|
Provided is a method for developing positive-tone chemically amplified resists with an organic developer solvent having at least one polyhydric alcohol, such as ethylene glycol and/or glycerol, alone or in combination with an additional organic solvent, such as isopropyl alcohol, and/or water. The organic solvent developed positive tone resists described herein are useful for lithography pattern forming processes; for producing semiconductor devices, such as integrated circuits (ic); and for applications where basic solvents are not suitable, such as the fabrication of chips patterned with arrays of biomolecules or deprotection applications that do not require the presence of acid moieties..
| Patterning of transparent conductive coatings|
A method of patterning a conductive polymer includes providing a conductive polymer layer coated over a first support followed by pattern-wise transferring a layer containing polyvinyl acetal from a second support onto the conductive polymer to form a mask with at least one opening. The masked conductive polymer is subjected to treatment through the opening that changes the conductivity of the conductive polymer by at least one order of magnitude in areas not covered by the mask..
| Electrophotographic photoreceptor and image forming apparatus including the same|
An electrophotographic photoreceptor includes a cylindrical base and a photosensitive layer disposed on the cylindrical base. The photosensitive layer has a photoconductive layer disposed on the cylindrical base, a charge injection blocking layer disposed on the photoconductive layer, and a surface layer disposed on the charge injection blocking layer.
| Electrophotographic photosensitive member, method for manufacturing the same, and electrophotographic apparatus|
A surface layer of the electrophotographic photosensitive member has a change region in which a ratio of the number of carbon atoms with respect to the sum of the number of silicon atoms and the number of carbon atoms gradually increases toward a surface side of the electrophotographic photosensitive member from a photoconductive layer side, wherein the change region has an upper charge injection prohibiting portion containing a group 13 atom, and a surface-side portion which is positioned closer to the surface side of the electrophotographic photosensitive member than the upper charge injection prohibiting portion and does not contain the group 13 atom, and the distribution of the group 13 atom in a boundary portion between the surface-side portion and the upper charge injection prohibiting portion is precipitous.. .
| Method of manufacturing a color filter|
A color filter is manufactured on each of a plurality of light-receiving elements of an rgb sensor using a plurality of kinds of light-transmitting films having different transmission colors. In such a case, the light-transmitting film that is to be coated next does not uniformly spread across the entire semiconductor wafer, and coating nonuniformities readily occur when a pattern of the light-transmitting film formed earlier on a certain optical element has a right angle portion.
| Light-reflective photomask and mask blank for euv exposure, and manufacturing method of semiconductor device|
According to one embodiment, a light-reflective photomask including a circuit pattern area, and an outside area positioned outside the circuit pattern area includes a substrate, a low-reflectivity layer provided in both the circuit pattern area, and the outside area, formed on the substrate, including at least a conductive layer, and comprising a first reflectivity for deep ultraviolet light, a multilayer reflection layer provided in the circuit pattern area, and formed on the low-reflectivity layer, and a light-absorber provided in the circuit pattern area, formed on the multilayer reflection layer, including a circuit pattern, and comprising a second reflectivity for deep ultraviolet light. The first reflectivity is lower than or equal to the second reflectivity..
| Scalable magnetoresistive element|
One embodiment of a magnetoresistive element comprises: a free ferromagnetic layer comprising a reversible magnetization direction directed substantially perpendicular to a film surface in its equilibrium state; a pinned ferromagnetic layer comprising a fixed magnetization direction directed substantially perpendicular to the film surface; a nonmagnetic tunnel barrier layer disposed between the free ferromagnetic layer and the pinned ferromagnetic layer and having a direct contact with the free and pinned ferromagnetic layers; a first nonmagnetic conductive layer disposed adjacent to and having a direct contact with a side of a free ferromagnetic layer opposite to the tunnel barrier layer; and a second nonmagnetic conductive layer disposed adjacent to a side of the pinned ferromagnetic layer opposite to the tunnel barrier layer, wherein the free ferromagnetic layer and the pinned ferromagnetic layers comprise at least one element selected from the group consisting of fe, co, and ni, at least one element selected from the group consisting from v, cr, and mo, and at least one element selected from the group consisting of b, p, c, and si, and wherein the first nonmagnetic conductive layer comprises an oxide. Other embodiments are described as shown..
| Process for the production of a layered body and layered bodies without masking obtainable therefrom|
A process for the production of a layered body s2 (1), comprising the process steps: i) provision of a layered body s1 (2) comprising a substrate (3) and an electrically conductive layer (4) which is applied to the substrate (3) and comprises an electrically conductive polymer p1; ii) bringing of at least a first region du (7) of the electrically conductive layer (4) into contact with a composition z1 for reduction of the electrical conductivity of this first region du (7), wherein the electrically conductive layer (4) has a temperature in a range of from more than 40 to 100° c. During the bringing into contact..
| Continuous cheese production process|
Processes and equipment for continuously making a substitute or imitation cheese by feeding a heated first liquid stream including emulsifying salt, water and cheese powder into a cooker which is a twin screw mixer, feeding a heated second liquid stream including oil and casein or a non-dairy protein into the cooker, processing the first liquid stream and the second liquid stream through the cooker to form a cheese composition, and cooling the cheese composition. The cheese composition may be continuously extruded in a desired shape such as sheets or ropes and/or may be continuously cooled and cut into pieces having a reduced size such as a size to approximate shredded cheese..
| Compositions with thermally-regulating material|
Cosmetic compositions for topical application to the skin comprising at least one phase change material (pcm) in combination with a cosmetically compatible carrier, and methods for maintaining the skin of a wearer of a cosmetic product at a comfortable temperature, are provided.. .
| Mutant ctla4 gene transfected t cell and composition including same for anticancer immunotherapy|
A transformed t-cell for t-cell therapy, and a composition including the same for anticancer immunotherapy. More particularly, the transformed t-cell is characterized by the transfection of a gene for coding a chimera protein.
| Apc-mediated tolerance induction for therapy of multiple sclerosis|
The invention relates to transgene expression constructs—particularly self inactivating lentiviral vectors—comprising a dendritic cell specific promoter controlling the expression of autoantigen proteins, namely myelin basic protein, proteolipid protein and myelin oligodendrocyte glycoprotein, for use in the therapy of multiple sclerosis.. .
| Adeno-associated virus virions with variant capsid and methods of use thereof|
The present disclosure provides adeno-associated virus (aav) virions with altered capsid protein, where the aav virions exhibit greater infectivity of retinal cells compared to wild-type aav. The present disclosure further provides methods of delivering a gene product to a retinal cell in an individual, and methods of treating ocular disease..
| Cosmetic compositions, method for preparing a cosmetic composition, cosmetic use of the composition and cosmetic method for straightening and/or shaping keratinous materials|
The present invention relates to a new cosmetic product for treating keratinous materials, particularly hair, to the method for preparing the cosmetic product, and to a cosmetic method for the care of keratinous material using these compositions.. .