|| List of recent Duc-related patents
|Persistent inheritance of hyperdominant traits in a perennial lineage|
The present invention provides a perennial lineage engendered with hyperdominant traits that express consistent penetrance in all descendants of a founder organism. A genetic construct containing one or more genetic elements encoding a self-regulating feedback loop generates a regulatory rna, polypeptide, or other gene product at or below a trigger level of concentration in a zygote and indicates with respect to the concentration level whether one or two copies of a genetic construct conferring a hyperdominant trait exist in said zygote..
|Method and apparatus for reproducing contents in multimedia system|
A method and an apparatus for reproducing content by a terminal in a multimedia system are provided. The method includes receiving segment information from a first content provider for providing a first content, and reproducing a second content at a specific time point in a reproduction period of the first content based on the received segment information.
|Revising layout design through opc to reduce corner rounding effect|
The present disclosure provides a method of fabricating a semiconductor device. A first layout design for a semiconductor device is received.
|Encoder, decoder and semiconductor device including the same|
Provided is a semiconductor device configured to encode input data into a codeword including m different symbols, each of which includes nm symbols. The semiconductor device including a first storage unit configured to store a first state value which is reset according to m and nm; a second storage unit corresponding to any one of the m different symbols and configured to store m second state values determined through the corresponding symbol and the first state value; a third storage unit configured to store a third state value..
|Semiconductor memory devices including separately disposed error-correcting code (ecc) circuits|
A semiconductor memory device may comprise: at least one bank, each of the at least one bank including a plurality of memory cells; an error-correcting code (ecc) calculator configured to generate syndrome data for detecting an error bit from among parallel data bits read out from the plurality of memory cells of each of the at least one bank; an ecc corrector separated from the ecc calculator, the ecc corrector configured to correct the error bit from among the parallel data bits by using the syndrome data and configured to output error-corrected parallel data bits; and/or a data serializer configured to receive the error-corrected parallel data bits and configured to convert the error-corrected parallel data bits into serial data bits.. .
|Encoder, decoder and semiconductor device including the same|
A semiconductor device may include a first encoding unit configured to encode first data into an anti-drift code, and a second encoding unit configured to add parity information to the anti-drift code.. .
A semiconductor device may include a storage unit configured to store a number of times a first command has been provided to a memory cell array, a control unit configured to generate a second command operable to activate at least one word line in the memory cell array based on a comparison of the number stored at the storage unit with a threshold value, when the first command is received, and a selection unit configured to select one of the first command and the second command based on a result of the comparison and transmit the selected command to the memory cell array.. .
|Semiconductor device for performing test and repair operations|
A semiconductor device may include: a storage unit configured to store program codes provided through control of a processor core; and a control unit configured to perform a control operation on a semiconductor memory device according to the program codes.. .
|Personnel recrutment system using fuzzy criteria|
A data search system provides access to information about potential job candidates, in particular, their professional skills, work experience, education, professional activity and other aspects, which are of importance to a recruiter. The invention can be employed by recruiting agencies, hr departments, independent experts and other staffing agencies, as well as managers looking for new employees.
|Controlled inventory refrigerated dispensing system|
A vending refrigerator for dispensing pharmaceutical products, such as vials, bottles, syringes, and the like, at a point of distribution, e.g., a doctor's office or pharmacy. The vending refrigerator comprises a first product dispenser for one type of packaging and a second product dispenser for a second type of packaging.
Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure.
|Vending machine controller with innovative display features|
A vending having a vending machine controller for calculating credit acceptance, calculating credit return, signaling product dispensing, displaying information on a display, monitoring environmental conditions, and controlling lighting. Coin and bill acceptors are also included that receive and validate coins and bills and, optionally, pay coins and bills back as change.
|Parylene-based microelectrode array implant for spinal cord stimulation|
An implantable electrode array assembly configured to apply electrical stimulation to the spinal cord. A substantially electrically nonconductive layer of the device has a first portion positionable alongside the spinal cord that includes a plurality of first openings.
Methods and devices for stimulating nerves are disclosed. In one embodiment adapted for stimulating excitable tissue, the invention includes drive circuitry, an acoustic transducer and a pair of electrodes..
|Ultrasound treatment device and methods of use|
In some embodiments, an ultrasound treatment system can comprise: a ultrasound transducer comprising a subdivided surface comprising a plurality of electronically isolated pieces; a power source coupled to at least two of the pieces, wherein the power supply is configured to independently shape a temporal delay or a spatial delay, as compared to each other, of acoustic energy emitted from the at least two pieces; wherein each of the at least two pieces shape the acoustic energy, independently, into a thermal zone in subcutaneous tissue.. .
|Noise subtraction for intra-body fiber optic sensor|
An optical source can generally provide optical energy having phase noise. Such phase noise, when demodulated using an intravascularly-deliverable optical fiber transducer, can be indistinguishable from a signal of interest.
|High frequency ultrasonic convex array transducers and tissue imaging|
A high frequency ultrasonic transducer may include a plurality of adjacent ultrasonic transducer elements. The adjacent transducer elements may be sized and configured so as to resonate at a frequency that is at least 15 mhz.
|Acoustic image generation apparatus and progress display method in generating an image using the apparatus|
In an acoustic image generation apparatus with a probe having an ultrasonic transducer, providing a scanning length setting part that sets a target scanning length in a scanning process of the probe, a coordinate obtaining part that sequentially obtains a coordinate of the probe in real space, a scanned length calculation part that calculates a scanned length based on the coordinate obtained by the coordinate obtaining part, a progress level display generation part that generates a progress level display that indicates progress of the scanning process based on the target scanning length and the scanned length, and a display part that displays the progress level display.. .
|Transducers, systems, and manufacturing techniques for focused ultrasound therapies|
A system to apply ultrasound energy to a region surrounding blood flow in a blood vessel from a position outside a patient includes: a therapeutic ultrasound transducer comprising a plurality of transducer elements; and a processor configured to control the plurality of transducer elements; wherein the processor is configured to change phase inputs to the transducer elements to move a focus of the transducer at least 1 cm in a first plane which is substantially along a plane of the transducer elements of the therapeutic ultrasound transducer and at least 1 cm in a second plane orthogonal to the first plane; and wherein the processor is further configured to position the focus of the transducer in sequential positions offset from the blood flow in the blood vessel according to a pattern pre-determined by an operator of the system.. .
|Non-invasive assessment of liver fat by crawling wave dispersion with emphasis on attenuation|
Using a modified ultrasound device, crawling waves are applied to the liver over a range of shear wave frequencies. Dispersion measurements are obtained that reflect tissue viscosity and these correlate with the degree of steatosis.
|Method for continuous production of polycarbonate-polyorganosiloxane copolymer|
The present invention provides a method for producing a polycarbonate-polyorganosiloxane copolymer economically and stably, in particular, the present invention is concerned with a method for continuous production of a polycarbonate-polyorganosiloxane copolymer including (a) a step of withdrawing a polymerization reaction solution obtained by polymerizing a dihydric phenol compound, a carbonate precursor, and a polyorganosiloxane in the presence of an alkaline compound aqueous solution and a water-insoluble organic solvent continuously or intermittently from a reactor; (b) a step of separating the polymerization reaction solution withdrawn in the step (a) into an aqueous phase and a water-insoluble organic solvent phase; and (c) a step of after washing the water-insoluble organic solvent phase separated in the step (b) with an acidic aqueous solution, separating the resultant into an aqueous phase and a water-insoluble organic solvent phase, wherein the content of the polycarbonate-polyorganosiloxane copolymer in the aqueous phase separated in the step (c) is controlled to not more than 2% by mass, and a part or the whole of an extract obtained by extracting the aqueous phase separated in the step (c) with a water-insoluble organic solvent is reused for the step (a).. .
|Design, synthesis and evaluation of procaspase activating compounds as personalized anti-cancer drugs|
Compositions and methods are disclosed in embodiments relating to induction of cell death such as in cancer cells. Compounds and related methods for synthesis and use thereof, including the use of compounds in therapy for the treatment of cancer and selective induction of apoptosis in cells are disclosed.
|Connector with air extraction|
An electrical connector a semiconductor processing tool is provided. The electrical connector comprises a male connector part having pins and a first holder in which the pins are mounted and a female connector part having sockets and a second holder in which the sockets are mounted.
|Process for smoothing a surface via heat treatment|
The process for smoothing a rough surface of a first substrate made of a semiconductor alloy based on at least two elements chosen from ga, as, al, in, p and n is implemented by placing a second substrate facing the first substrate so that the rough surface is placed facing a surface of the second substrate. The first and second substrates are separated by a distance d of at least 10 μm, the facing portions of the two substrates defining a confinement space.
|Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium|
A method of manufacturing a semiconductor device includes: pre-treating a surface of a substrate by supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate heated in a process chamber under a pressure less than atmospheric pressure; and forming a film on the pre-treated substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas to the substrate in the process chamber; and supplying a reaction gas to the substrate in the process chamber..
|Cold spray barrier coated component of a plasma processing chamber and method of manufacture thereof|
A cold spray barrier coated component of a semiconductor plasma processing chamber comprises a substrate having at least one metal surface wherein a portion of the metal surface is configured to form an electrical contact. A cold spray barrier coating is formed from a thermally and electrically conductive material on at least the metal surface configured to form the electrical contact of the substrate.
|Method of manufacturing a semiconductor device including a stress relief layer|
A method of manufacturing a semiconductor device includes providing a layered structure having a hard dielectric layer containing a first dielectric material having a young's modulus greater than 10 gpa in a central portion of a main surface of a main body comprising a single crystalline semiconductor body, and providing a dielectric stress relief layer containing a second dielectric material having a lower young's modulus than the first dielectric material, the stress relief layer covering the layered structure and extending beyond an outer edge of the layered structure.. .
|Method of manufacturing semiconductor device|
A method of manufacturing a semiconductor device includes forming a second insulating layer over a first insulating layer, forming a mask over the second insulating layer, after the forming the mask, a first etching of the second insulating layer which is not covered by the mask, and after the first etching, a second etching of the second insulating layer and the first insulating layer which are not covered by the mask. At the first etching, the second insulating layer left over the first insulating layer and the first insulating layer is not exposed.
|Interconnection wires of semiconductor devices|
A method of forming a semiconductor device includes forming a plurality of substantially equal-spaced first spacers having a first pitch over a substrate and forming first metal interconnecting wires utilizing the first spacers. The method also includes forming a plurality of substantially equal-spaced second spacers in such a way to abut, respectively, the plurality of first metal interconnecting wires and define a plurality of substantially equal-spaced trenches.
|Interconnect fabrication at an integrated semiconductor processing station|
A stand-alone processing station of a semiconductor manufacturing system may be configured to fabricate interconnects on a semiconductor wafer. The stand-alone processing station may include a chemical mechanical polishing (cmp) module and an electro-chemical deposition (ecd) module.
|Nonvolatile semiconductor memory device and method of manufacturing|
A nonvolatile semiconductor memory device includes a first insulating layer on a semiconductor layer, a charge storage layer on the first insulating layer, a second insulating layer on the charge storage layer, and a control gate electrode on the second insulating layer. The charge storage layer includes a floating gate layer on the first insulating layer, an interface insulating layer on the floating gate layer, and a charge trap layer on the interface insulating layer, and a lower end of a conduction band of the interface insulating layer is higher than a trap level of the charge trap layer and is lower than a lower end of a conduction band of the charge trap layer..
|Work function adjustment with the implant of lanthanides|
Semiconductor devices and fabrication methods are provided, in which fully silicided gates are provided. A lanthanide series metal is implanted into the gate electrode layer prior to silicidation and diffuses into the gate dielectric during an activation anneal.
|Selective epitaxial growth of semiconductor materials with reduced defects|
A semiconductor device includes a substrate formed of a first semiconductor material; two insulators on the substrate; and a semiconductor region having a portion between the two insulators and over the substrate. The semiconductor region has a bottom surface contacting the substrate and having sloped sidewalls.
|Methods of forming isolation regions for bulk finfet semiconductor devices|
One method disclosed herein includes forming a plurality of fin-formation trenches in a semiconductor substrate that define a plurality of spaced-apart fins, forming a patterned liner layer that covers a portion of the substrate positioned between the fins while exposing portions of the substrate positioned laterally outside of the patterned liner layer, and performing at least one etching process on the exposed portions of the substrate through the patterned liner layer to define an isolation trench in the substrate, wherein the isolation trench has a depth that is greater than a depth of the fin-formation trenches.. .
|Resistive random access memory cells having metal alloy current limiting layers|
Provided are semiconductor devices, such as resistive random access memory (reram) cells, that include current limiting layers formed from alloys of transition metals. Some examples of such alloys include chromium containing alloys that may also include nickel, aluminum, and/or silicon.
|Semiconductor device and method of making|
The present disclosure is related to semiconductor technologies and discloses a semiconductor device and its method of making. In the present disclosure, a transistor's source and drain are led out by concurrently formed metal-semiconductor compound contact regions at the source and drain and metal-semiconductor compounds in vias formed at positions corresponding to the source and drain.
|Method of forming semiconductor device|
A method of forming a semiconductor device is provided. At least one gate structure including a dummy gate is formed on a substrate.
|6t sram architecture for gate-all-around nanowire devices|
A memory device includes a first plurality of semiconductor nanowires tethered between landing pads and suspended over a substrate. A first gate electrode surrounds each of the first plurality of semiconductor nanowires, making them gate-all-around, (gaa) semiconductor nanowires.
|Replacement metal gate process for cmos integrated circuits|
A complementary metal-oxide-semiconductor (cmos) integrated circuit structure, and method of fabricating the same according to a replacement metal gate process. P-channel and n-channel mos transistors are formed with high-k gate dielectric material that differ from one another in composition or thickness, and with interface dielectric material that differ from one another in composition or thickness.
|Method of scavenging impurities in forming a gate stack having an interfacial layer|
A multi-layer scavenging metal gate stack, and methods of manufacturing the same, are disclosed. In an example, a gate stack disposed over a semiconductor substrate includes an interfacial dielectric layer disposed over the semiconductor substrate, a high-k dielectric layer disposed over the interfacial dielectric layer, a first conductive layer disposed over the high-k dielectric layer, and a second conductive layer disposed over the first conductive layer.
|Semiconductor device manufacturing method|
A semiconductor device includes a p-type semiconductor layer, n-type column regions formed of columnar thermal donors exhibiting an n-type property, a p-type column region interposed between the n-type column regions, the n-type column regions configured to form a super-junction structure in cooperation with the p-type column region, a channel region formed in the semiconductor layer, a source region formed in the channel region, a gate insulator film formed on the semiconductor layer, and a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film.. .
|Semiconductor device and method for manufacturing the same|
In a manufacturing method of a semiconductor device, a semiconductor chip is sealed with a resin, and then a laser is applied to remove the resin so that a part of the semiconductor chip is exposed. The semiconductor chip is made of a material that has a lower absorptivity of the laser than the resin and is not melted by the laser.
|Manufacturing method of wafer level package|
The present invention provides a method for manufacturing a semiconductor package structure, including (i) providing a carrier plate; (ii) disposing a die on the carrier plate; (iii) forming a plurality of bonding wires having a first end and a second end; (iv) forming an encapsulant covering the die and the bonding wires and exposing a portion of each of the bonding wires from a first surface thereof; (v) removing the carrier plate; (vi) forming a patterned conductive layer on a second surface of the encapsulant opposite to the first surface; (vii) electrically connecting the second ends of the bonding wires to the active surface of the die via the patterned conductive layer; and (viii) forming a plurality of first external connection terminals on the first surface of the encapsulant respectively covering the portions of the bonding wires exposed from the encapsulant.. .
|Fabrication method of packaging substrate, and fabrication method of semiconductor package|
A fabrication method of a packaging substrate includes: providing a metal board having a first surface and a second surface opposite to the first surface, wherein the first surface has a plurality of first openings for defining a first core circuit layer therebetween, the second surface has a plurality of second openings for defining a second core circuit layer therebetween, each of the first and second openings has a wide outer portion and a narrow inner portion, and the inner portion of each of the second openings is in communication with the inner portion of a corresponding one of the first openings; a first encapsulant in the first openings; a second encapsulant in the second openings; and forming a surface circuit layer on the first encapsulant and the first core circuit layer.. .
|Semiconductor device fabricating method|
A semiconductor device fabricating method includes forming device chip regions and a monitor chip region for processing management, on a substrate surface layer on one main surface side of a semiconductor substrate wafer, each device chip region having an active region and an edge region; after forming metal films on front surface of the device chip regions and the monitor chip region by vapor deposition and photolithography, forming protective films on the front surfaces of the device chip regions and monitor chip region; and grinding and polishing another main surface side of the semiconductor substrate wafer to thin the semiconductor substrate wafer. A difference between an area of one chip occupied by the protective film of the monitor chip region and an area of one chip occupied by the protective film of the device chip region is 20% or less..
|Fabrication method of semiconductor package without chip carrier|
A semiconductor package without a chip carrier formed thereon and a fabrication method thereof. A metallic carrier is half-etched to form a plurality of grooves and metal studs corresponding to the grooves.
|Semiconductor device and method for manufacturing the same|
A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region.
|Methods for thick films thermoelectric device fabrication|
Solid state thermoelectric energy conversion devices can provide electrical energy from heat flow, creating energy, or inversely, provide cooling through applying energy. Thick film methods are applied to fabricate thermoelectric device structures using microstructures formed through deposition and subsequent thermal processing conditions.
|Light-emitting device and method for manufacturing same|
Disclosed is a light-emitting device comprising a light-emitting element (10) composed of a gallium nitride compound semiconductor having an emission peak wavelength of not less than 430 nm; a molded body (40) provided with a recessed portion having a bottom surface on which the light-emitting element (10) is mounted and a lateral surface; and a sealing member (50) containing an epoxy resin including a triazine derivative epoxy resin, or a silicon-containing resin. The molded body (40) is obtained by using a cured product of a thermosetting epoxy resin composition essentially containing an epoxy resin including a triazine derivative epoxy resin, and has a reflectance of not less than 70% at the wavelengths of not less than 430 nm..
|Semiconductor device and method for manufacturing the same|
According to one embodiment, a semiconductor device includes first, second, and third molded bodies. The first molded body covers a first light emitting element, a part of a lead electrically connected to the first light emitting element, a first light receiving element configured to detect a light emitted from the first light emitting element, and a part of a lead electrically connected to the first light receiving element with a first resin.
|Measurement device, measurement method, and method for manufacturing semiconductor device|
There is provided a measuring apparatus including: an illuminator configured to illuminate, with an illumination light, a substrate having a pattern formed by exposure on a surface; a detector configured to detect the illumination light modulated by the pattern to output a detection signal; and a measuring unit configured to measure an exposure condition of the pattern of a desired portion by using the detection signals detected at a plurality of portions of the pattern.. .
|Method of manufacturing a magnetoresistive-based device|
A method of manufacturing a magnetoresistive-based device having magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer, including removing the first electrically conductive layer and the first magnetic materials layer unprotected by a first hard mask, to form a first electrode and a first magnetic materials, respectively; and removing the tunnel barrier layer, second magnetic materials layer, and second electrically conductive layer unprotected by the second hard mask to form a tunnel barrier, second magnetic materials, and a second electrode.. .
|Method for producing corneal endothelial cell|
The invention provides a method of efficiently producing corneal endothelial cells, particularly from corneal stroma or ips cell-derived neural crest stem cells, a method of producing corneal endothelial cells stably in a large amount by inducing more efficient differentiation of stem cells into corneal endothelial cells, and a medicament containing corneal endothelial cells. The method of inducing differentiation of stem cells into corneal endothelial cells includes a step of culturing the stem cells in a differentiation induction medium containing a gsk3 inhibitor (preferably a gsk3β inhibitor) and retinoic acid, with the differentiation induction medium preferably further containing one or more of tgfb2, insulin, a rock inhibitor, and the like..
|Isoprene synthase variants with improved solubility for production of isoprene|
The present invention provides methods and compositions of variant polypeptides having isoprene synthase activity with improved solubility. In particular, the present invention provides isoprene synthase variant for increased isoprene production in recombinant host cells..
|Tailored oils produced from recombinant heterotrophic microorganisms|
Methods and compositions for the production of oil, fuels, oleochemicals, and other compounds in recombinant microorganisms are provided, including oil-bearing microorganisms and methods of low cost cultivation of such microorganisms. Microalgal cells containing exogenous genes encoding, for example, a lipase, a sucrose transporter, a sucrose invertase, a fructokinase, a polysaccharide-degrading enzyme, a keto acyl-acp synthase enzyme, a fatty acyl-acp thioesterase, a fatty acyl-coa/aldehyde reductase, a fatty acyl-coa reductase, a fatty aldehyde reductase, a fatty aldehyde decarbonylase, and/or an acyl carrier protein are useful in manufacturing transportation fuels such as renewable diesel, biodiesel, and renewable jet fuel, as well as oleochemicals such as functional fluids, surfactants, soaps and lubricants..
|Protein production method using transformed plant cells|
An object of this invention is to produce a protein by efficiently culturing plant cells while escaping mrna translational repression in cultured plant cells under stress caused by lack of conditions essentially required for the growth (e.g., nutrient-starvation stress and hypoxic stress). This invention provides a method for escaping translational repression of a protein encoded by mrna, the repression being induced by stress due to absence of conditions required for the growth, the method comprising the step of culturing a plant cell transformed with a recombinant dna molecule encoding mrna containing 5′ utr defined in (a) or (b) below, the culturing being carried out under stress due to absence of conditions required for the growth: (a) 5′ utr having a base sequence of seq id no: 1, 2, 3, 4, 5, or 6; or (b) 5′ utr having the base sequence of the 5′ utr of (a) in which one or more bases are replaced, deleted, or added, and which escapes translational repression induced by stress due to absence of conditions required for the growth..
|Educational content and/or dictionary entry with complementary related trivia|
A fast convenient process for understanding a word or phrase displayed on a computer screen. A user selects the word and instantly triggers the display of an educational content such as a definition for the word.
An object of the present invention is to provide an implant structure assuring that substances accelerating breeding of bacteria are hard to be induced. The implant structure comprises: an artificial tooth root including an artificial tooth root main body having a distal end portion and a proximal end portion and a thread being formed at least on the distal end portion side and an induction portion for inducing a soft tissue provided on an outer periphery of the proximal end portion of the artificial tooth root main body; and a support base having a covering portion at the proximal end portion side of the support base covering the whole surface of the proximal end portion side of the induction portion, wherein the support base is provided with a step portion along its outer periphery from the covering portion toward a distal end side of the support base..
|Composite conductive electrode and manufacturing method thereof|
The present disclosure relates to a composite conductive electrode and a manufacturing method thereof, belonging to the field of vanadium battery manufacturing. The method comprises: selecting a carbon felt as a conductive substrate, selecting a conductive resin as the connecting substance for spaces in the carbon felt so as to enhance the conductive properties of the carbon felt; the conductive resin comprises a conductive plastic material or an epoxy resin..
|Composite electrode material for lithium ion battery and preparation method thereof|
The invention provides a composite electrode material for a lithium ion battery. The composite electrode material includes an electrode material and a conductive polymer.