|| List of recent Duc-related patents
|Vertical embedded sensor and process of manufacturing thereof|
A scanning probe assembly having a nanometer sensor element defined at a tip apex and its method of fabrication using micro-electromechanical systems (mems) processing techniques. The assembly comprises a probe body, a cantilever extending outward, and a hollow tip at the end of the cantilever.
|Systems and methods for receiving and transferring video information|
Devices and methods for receiving and/or processing digital data. The devices may include a satellite modem, a transport module, and/or a processing module.
|Method for forming semiconductor layout patterns, semiconductor layout patterns, and semiconductor structure|
A method for forming semiconductor layout patterns providing a pair of first layout patterns being symmetrical along an axial line, each of the first layout patterns comprising a first side proximal to the axial line and a second side far from the axial line; shifting a portion of the first layout patterns toward a direction opposite to the axial line to form at least a first shifted portion in each first layout pattern, and outputting the first layout patterns and the first shifted portions on a first mask.. .
|Display apparatus and user interface screen displaying method using the same|
A display apparatus includes an input unit receiving a user command for configuring a main user interface (ui) screen for controlling content reproduction, and a controller configuring the main ui screen including at least one ui element selected by the user command and display the main ui screen configured according to the user command on a display, wherein the at least one ui element is a graphic element to which a function associated with the content reproduction is mapped.. .
|Method for copy-protected storage of information on a data carrier|
A method for storing digital data information on a data carrier and for reading the information therefrom uses a disk having an individual digital identifier. A signature is formed, and the information includes information items, which can be processed by a first electronic data processing device only if the identifier and the signature are in a predefined relation to one another.
|Content reproducing device, content reproducing method, and content reproducing system|
According to one embodiment, a content reproducing device is provided with connection unit and reproducing unit. The connection unit connects a license server and removable medium to each other in such a manner that mutual authentication can be carried out between the license server and removable medium, and rights information can be downloaded from the license server to the removable medium.
An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix.
|Memory system, semiconductor memory device and operating method thereof|
Disclosed are a memory system, a semiconductor memory device and a method of operating the same. The memory system includes: a memory controller to output a command, address and data; and a semiconductor memory device to store at least one page data in each memory cell in response to the command, the address and the data, the memory controller to separately output first address used for determining the at least one page data from the data and second address used for determining a word line coupled to at least one memory cell..
|Storage device including flash memory and capable of predicting storage device performance based on performance parameters|
A storage device includes a semiconductor memory storing data. A controller instructs to write data to the semiconductor memory in accordance with a request the controller receives.
|Content providing method and device|
A content reproduction device includes: a communicator that requests a server for recommended content information, and receives from the server the recommended content information as a response to the request; a controller that is configured to select content based on the received recommended content information; and a display that outputs the selected content, wherein the recommended content information is information for selecting the content according to a viewing information.. .
|Semiconductor memory device and random number generator|
According to one embodiment, semiconductor memory device and a random number generator includes a semiconductor memory device includes: a semiconductor memory 30, a random number generator 10 generating a random number sequence, and a data writing unit 20 storing data in the semiconductor memory 30 using the random number sequence. The random number generator 10 includes: a random number generating unit generating an m-bit random number sequence; a coefficient selecting unit outputs a first coefficient or a second coefficient to the random number generating unit; and a bit selecting unit which outputs the random number sequence obtained by selecting n bits from m-bit random number sequence output from the random number generating unit..
|Reproduction of file series|
Disclosed are a method and an apparatus for managing a series of files. A series of files may be grouped and a reproduction progress of a most recently reproduced file may be tracked.
A position-measuring device includes a measuring transducer configured to carry out a position measurement. The position-measuring device has at least one memory having stored parameter data defining an active configuration under which the position-measuring device is operable.
|Gas discriminating semiconductor sensors|
Sensing particular gases in a mixture uses precise modulated heating. Sensor relative responses are compared at different temperatures and compared with known relative responses to identify gases and concentrations.
|Electronic device and system for controlling applications implementing at least one piezoelectric, electrostrictive or magnetostrictive transducer|
The electronic device (1) for controlling comprises an electric power generator (10) suitable for supplying at least one piezoelectric, electrostrictive or magnetostrictive transducer (2), with a control signal (s), electronic controlling means (11) capable of automatically controlling the electric power generator by using a control macro-function (m), and an electronic memory (112) in which the following are stored: a first family (a) of control functions comprising one or a plurality of different elementary control functions (an), making it possible to adjust the amplitude of the control signal (s), a second family (t) of control functions comprising one or a plurality of different elementary control functions (tn), making it possible to adjust the duration of the control signal (s), a third family (c) of control functions comprising a plurality of different elementary control functions (cn), making it possible to adjust the control signal (s) cycle, at least said control macro-function (m), which is made up of the assembly of at least three elementary control functions chosen respectively from among the three families of control functions (a, t, c) recorded in the memory.. .
|Device for performing diagnostics and/or therapy|
The disclosure relates to a device for performing diagnostics and/or therapy and related kit, system, computer program, methods and computer readable mediums. The device of this disclosure has the advantages that the device does not need access to the pericardium and that the whole system including kit and device can be removed after diagnostics/therapy.
|Delivery catheter including collapsible sleeve and method of operating same|
A catheter system includes an introducer sheath and a delivery catheter having an external surface. A sleeve connector is supported on and axially movable relative to the external surface of the delivery catheter.
A surgical device. The surgical device may comprise a transducer configured to provide vibrations along a longitudinal axis and an end effector coupled to the transducer and extending from the transducer along the longitudinal axis.
|High frequency, high frame-rate ultrasound imaging system|
A system for producing an ultrasound image comprises a scan head having a transducer capable of generating ultrasound energy at a frequency of at least 20 megahertz (mhz), and a processor for receiving ultrasound energy and for generating an ultrasound image at a frame rate of at least 15 frames per second (fps).. .
|Hybrid communication system for implantable devices and ultra-low power sensors|
Aspects of the present disclosure are directed toward apparatuses, systems, and methods that include a base unit and a communication circuit that communicate, while implanted in a patient, signals between the patient and at least one device located external to the patient. The base unit also includes a transducer that communicates ultrasound (us) signals between the base unit and the at least one device located external to the patient, and harvests energy carried by the us signals..
|Expansion devices and methods of use thereof|
Devices, systems, and methods for facilitating access to and visualization of the pancreaticobiliary system are disclosed. In particular, the present disclosure relates to devices used to expand and/or maintain the papilla opening to facilitate access therethrough, e.g., to visualize, examine, diagnose, and/or treat the bile duct and pancreatic ducts.
|Production of saturated fatty alcohols from engineered microorganisms|
Recombinant bacterial microorganisms are provided which comprise heterologous fatty acyl reductases (“far”) polypeptides wherein said microorganisms have been engineered to produce increased amounts of saturated fatty alcohols and methods of making saturated fatty alcohols using the recombinant bacterial microorganisms.. .
|Recombinant nel-like (nell) protein production|
The present invention provides a method and system for producing a nell protein. The method and system comprise a cell encoding a nell protein or peptide and a non-insect secretory signal peptide..
|Epoxy resin production|
A process comprising: a) contacting a polyhydric phenol and an epihalohydrin in the presence of a catalyst under reaction conditions to form an organic feed comprising a bishalohydrin ether; b) contacting the organic feed and an aqueous feed comprising an inorganic hydroxide with a high shear mixer to produce a first mixed feed; c) contacting the first mixed feed with a phase separator to form a first organic product comprising an epoxy resin and a first aqueous product; and d) recovering the first organic product, is disclosed.. .
|Molecular signatures of invasive cancer subpopulations|
Carcinomas typically invade as a cohesive multicellular unit, a process termed collective invasion. It remains unclear how different subpopulations of cancer cells contribute to this process.
|Modulation of signal transducer and activator of transcription 3 (stat3) expression|
Disclosed herein are antisense compounds and methods for decreasing stat3 mrna and protein expression. Such methods, compounds, and compositions are useful to treat, prevent, or ameliorate hyperproliferative diseases..
The present invention relates to novel bipyridyl derivatives of formula (i) and to the use of such compounds in which the inhibition, regulation and/or modulation of signal transduction by atp consuming proteins like kinases plays a role, particularly to inhibitors of tgf-beta receptor kinases, and to the use of such compounds for the treatment of kinase-induced diseases, in particular for the treatment of tumors.. .
|Semiconductor device, antenna switch circuit, and radio communication apparatus|
A semiconductor device includes: a laminated body including a channel layer that is configured of a compound semiconductor; and at least one gate electrode that is provided on a top surface side of the laminated body, wherein the laminated body includes a first low-resistance region that is provided on the top surface side of the laminated body, the first low-resistance region facing the at least one gate electrode, and a second low-resistance region that is provided externally of the first low resistance region on the top surface side of the laminated body, the second low-resistance region being continuous with the first low-resistance region.. .
|Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium|
A thin film containing boron and a borazine ring structure is formed on a substrate by performing a cycle a predetermined number of times under a condition where the borazine ring structure is preserved in a borazine compound. The cycle includes: supplying a source gas containing boron and a halogen element to the substrate; and supplying a reactive gas including a borazine compound to the substrate..
|Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface|
A component of a plasma processing chamber having a protective liquid layer on a plasma exposed surface of the component. The protective liquid layer can be replenished by supplying a liquid to a liquid channel and delivering the liquid through liquid feed passages in the component.
|External uv light sources to minimize asymmetric resist pattern trimming rate for three dimensional semiconductor chip manufacture|
Embodiments of the present invention provide an apparatus and methods for forming stair-like structures in manufacturing three dimensional (3d) stacking of semiconductor chips. In one embodiment, a method of forming stair-like structures on a substrate includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process, wherein the trimming process further comprises supplying a trimming gas mixture including at least an oxygen containing gas, and providing a light energy in the trimming gas mixture to an edge of the substrate during the trimming process..
|Semiconductor device and method for manufacturing the same|
A semiconductor device includes: a contact hole formed over a structure including a conductive pattern; a contact plug formed in the contact hole; a first metal silicide film surrounding the contact plug; and a second metal silicide film formed over the contact plug.. .
|Method of fabricating a semiconductor interconnect structure|
A method for forming a semiconductor interconnect structure includes forming a dielectric layer on a substrate and patterning the dielectric layer to form an opening therein. A metal layer fills the opening and covers the dielectric layer.
|Method of making a conductive pillar bump with non-metal sidewall protection structure|
A method of making a semiconductor device includes forming an under bump metallurgy (ubm) layer over a substrate, the ubm layer comprising sidewalls and a surface region. The method further includes forming a conductive pillar over the ubm layer, the conductive pillar includes sidewalls, wherein the conductive pillar exposes the surface region of the ubm layer.
|Manufacturing method and manufacturing apparatus of semiconductor device|
A manufacturing method for a semiconductor device includes implanting dopants into a silicon carbide substrate, applying a carbon-containing material on at least one surface of the silicon carbide substrate, and heating the silicon carbide substrate having the carbon-containing material applied thereon to form a carbon layer on surfaces of the silicon carbide substrate. The heating is performed in a non-oxidizing atmosphere, and is followed by another heating step for activating the dopants..
|Semiconductor device and manufacturing method thereof|
A semiconductor device according to an embodiment includes a first-conductive-type semiconductor substrate; a first-conductive-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductive-type second semiconductor layer epitaxially formed on the first semiconductor layer; and a second-conductive-type third semiconductor layer epitaxially formed on the second semiconductor layer, and having an impurity concentration higher than that of the second semiconductor layer. The semiconductor device also includes a recess formed in the third semiconductor layer, and at least a corner portion of a side face and a bottom surface is located in the second semiconductor layer.
|Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core|
According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.. .
|Manufacturing method of semiconductor device|
A manufacturing method of a semiconductor device is provided. The method includes at least the following steps.
|Methods of manufacturing finfet semiconductor devices using sacrificial gate patterns and selective oxidization of a fin|
A method of manufacturing a semiconductor device includes patterning a substrate to form an active fin, forming a sacrificial gate pattern crossing over the active fin on the substrate, forming an interlayer insulating layer on the sacrificial gate pattern, removing the sacrificial gate pattern to form a gap region exposing the active fin in the interlayer insulating layer, and oxidizing a portion of the active fin exposed by the gap region to form an insulation pattern between the active fin and the substrate.. .
|Process for manufacturing semiconductor transistor device|
A process for manufacturing a semiconductor transistor device is provided. The process comprises steps of providing a substrate; forming a patterned hard mask on the substrate; forming a spacer on a sidewall of the patterned hard mask; forming a trench by removing a portion of the substrate not being covered by the patterned hard mask and the spacer; and filling a conductive material into the trench..
|Non-volatile memory having 3d array of read/write elements with vertical bit lines and select devices and methods thereof|
A three-dimensional memory is formed as an array of memory elements that are formed across multiple layers of planes positioned at different distances above a semiconductor substrate. The memory elements reversibly change a level of electrical conductance in response to a voltage difference being applied across them.
|Semiconductor device including finfet and diode having reduced defects in depletion region|
A semiconductor device comprises a first substrate portion and a second substrate portion disposed a distance away from the first substrate portion. The first substrate portion includes a first active semiconductor layer defining at least one semiconductor fin and a first polycrystalline layer formed directly on the fin.
|Contact landing pads for a semiconductor device and methods of making same|
A method of forming a conductive contact landing pad and a transistor includes forming first and second spaced-apart active regions in a semiconducting substrate, forming a layer of gate insulation material on the first and second active regions, and performing an etching process to remove the layer of gate insulation material formed on the second active region so as to thereby expose the second active region. The method further includes performing a common process operation to form a gate electrode structure above the layer of gate insulation material on the first active region for the transistor and the conductive contact landing pad that is conductively coupled to the second active region, and forming a contact to the conductive contact landing pad..
A semiconductor device includes an active area having a source and a gate. A gate metal contact is deposited above and forms an electrical contact with the gate and a source metal contact is deposited above and forms an electrical contact with the source.
|Low extension resistance iii-v compound fin field effect transistor|
A gate stack including a gate dielectric and a gate electrode is formed over at least one compound semiconductor fin provided on an insulating substrate. The at least one compound semiconductor fin is thinned employing the gate stack as an etch mask.
|Method of making a transitor|
A method for manufacturing a transistor includes forming a stack of semiconductor on insulator type layers including at least one substrate, surmounted by a first insulating layer and an active layer to form a channel for the transistor; forming a gate stack on the active layer; producing a source and a drain including forming, on either side of the gate stack, cavities by at least one step of etching the active layer, the first insulating layer, and part of the substrate selectively to the gate stack to remove the active layer, the first insulating layer, and a portion of the substrate outside regions situated below the gate stack; forming a second insulating layer on the bared surfaces of the substrate, to form a continuous insulating layer with the first insulating layer; baring of the lateral ends of the channel; and the filling of the cavities by epitaxy.. .
|Method of manufacturing semiconductor device|
A semiconductor device includes a first semiconductor chip including a first surface, a second surface and a first terminal arranged on the first surface, a second semiconductor chip including a first surface, a second surface and a second terminal arranged on the first surface of the second semiconductor chip, a support substrate including a first surface bonded to the second surfaces of the first semiconductor chip and the second semiconductor chip, and an isolation groove formed on the first surface of the support substrate. The isolation includes a pair of side surfaces continuously extending from opposing side surfaces of the first semiconductor chip and the second semiconductor chip, respectively, and the isolation groove is formed into the support substrate to extend from the first surface of the support substrate.
|Semiconductor device and method of land grid array packaging with bussing lines|
A semiconductor device and method of making a semiconductor device is described. An embedded die panel comprising a plurality of semiconductor die separated by saw streets is provided.
|Stack packages having fastening element and halogen-free inter-package connector|
A stack package includes a lower package including a lower package substrate and a lower semiconductor chip disposed on the lower package substrate, an upper package including an upper package substrate and an upper semiconductor chip disposed on the upper package substrate, a fastening element formed between a top surface of the lower semiconductor chip and a bottom surface of the upper package substrate, and a halogen-free inter-package connector connecting the lower package substrate to the upper package substrate.. .
|Semiconductor stack packages and methods of fabricating the same|
Semiconductor chip stacks are provided. The semiconductor chip stack includes a semiconductor chip stack including a plurality of first semiconductor chips vertically stacked on a top surface of the interposer, a second semiconductor chip stacked on a bottom surface of the interposer opposite to the semiconductor chip stack, and an external electrode attached to a top surface of the second semiconductor chip opposite to the interposer.
|Method and apparatus for semiconductor device fabrication using a reconstituted wafer|
Method and apparatus for semiconductor device fabrication using a reconstituted wafer is described. In one embodiment, diced semiconductor chips are placed within openings on a frame.
|Transistor, liquid crystal display device, and manufacturing method thereof|
Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity.
|Semiconductor device and method for manufacturing the same|
A miniaturized semiconductor device including a transistor in which a channel formation region is formed using an oxide semiconductor film and variation in electric characteristics due to a short-channel effect is suppressed is provided. In addition, a semiconductor device whose on-state current is improved is provided.
|Inks and pastes for solar cell fabrication|
A silicon solar cell is formed with an n-type silicon layer on a p-type silicon semiconductor substrate. An aluminum ink composition is printed on the back of the silicon wafer to form back contact electrodes.
|Compound semiconductor precursor ink composition, method for forming a chalcogenide semiconductor film, and method for forming a photovoltaic device|
A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film..
|Method for producing spot size converter|
A method for producing a spot size converter includes the steps of forming a first insulator mask on a stacked semiconductor layer; forming first and second terraces, and a waveguide mesa disposed between the first and second terraces by etching the stacked semiconductor layer using the first insulator mask, the first terrace having first to fourth terrace portions, the second terrace having fifth to eighth terrace portions, the waveguide mesa having first to fourth mesa portions; forming a second insulator mask including a first pattern on the first terrace portion, a second pattern on the fifth terrace portion, a third pattern on the third and fourth mesa portions, and a fourth pattern that integrally covers a region extending from the fourth terrace portion to the eighth terrace portion through the fourth mesa portion; and selectively growing a semiconductor layer by using the second insulator mask.. .
|Mold release film and method of process for producing a semiconductor device using the same|
A mold release film, which is adapted to be disposed on the cavity surface of a mold to form a resin-encapsulated portion by encapsulating a semiconductor element of a semiconductor device with a curable encapsulation resin, has a tensile modulus of elasticity of from 10 to 24 mpa at 132° c. As measured in accordance with jis k 7127, and a peak peel resistance of at most 0.8 n/25 mm..
|Manufacturing method of semiconductor device, and semiconductor device|
Provided is a semiconductor device that suppresses the occurrence of defects due to photocorrosion. A method for manufacturing the semiconductor device includes the steps of: forming an insulating layer with a concave portion over a substrate; forming a conductive film over the insulating film and the inside of the concave portion; polishing and removing the conductive film positioned over the insulating layer; and cleaning the insulating layer in a light-shielded state.
|Semiconductor defect characterization|
The defect-containing die identified from an inspection layer analysis subsequent to a manufacturing step for a wafer including a plurality of die and as well as the faulty die identified from a fault testing of the wafer are processed to identify a subset of the die that both contain a defect and are faulty. A probability analysis is performed to determine a confidence level of whether the die in the subset are faulty due to their defects..
|Increased production of secreted proteins by recombinant eukaryotic cells|
Described herein are methods for increasing the amount of protein secreted by a cell. In one case, a cell is provided which contains a heterologous nucleic acid encoding a protein having unfolded protein response modulating activity and a heterologous nucleic acid encoding a protein of interest to be secreted.
|Method and apparatus for evaluating educational performance|
An improved method and apparatus for evaluating the performance of an individual. In one aspect, the invention includes a method of encoding questions used in an examination in order to accurately identify and evaluate deficiencies in an individual's knowledge.
|System, device, and method of adaptive teaching and learning|
Device, system, and method of adaptive teaching and learning. A computerized method includes operations performed in order to dynamically group and re-group students based on their monitored progress of interacting with digital educational learning objects; performing dynamic layout of components and elements of a digital learning object by taking into account pedagogic goals, pedagogic priorities or pedagogic significance or elements; allowing a teacher to define differential stop-lines for different groups of students; allowing a teacher to command that all student devices temporarily present a uniform learning object; allowing a content publisher to receive aggregated feedback based on monitored progress; and allowing a content publisher to package the objects as portable stand-alone playback modules..
|Method for producing resist composition|
Provided by the present invention is a method for producing a resist composition, especially a silicon-containing resist underlayer film composition, with fewer film defects, the composition used in immersion exposure, double patterning, development by an organic solvent, and so forth. Specifically, provided is a method for producing a resist composition to be used for manufacturing a semiconductor device, wherein the resist composition is filtered using a filter which filters through 5 mg or less of an eluate per unit surface area (m2) in an extraction using an organic solvent..
|Composition for hardmask, method of forming patterns using the same, and semiconductor integrated circuit device including the patterns|
A composition for a hardmask including copolymer including repeating units represented by chemical formulae 1 and 2 and a solvent, a method of forming a pattern using the same, and a semiconductor integrated circuit device including a pattern formed using the method are provided.. .
|Polymer ion exchange membrane and method of preparing same|
Disclosed are a polymer ion exchange membrane having a self-hydration capability at a high temperature under low humidity, a method of preparing the polymer ion exchange membrane, and a polymer electrolyte fuel cell system including the polymer ion exchange membrane. The polymer electrolyte membrane includes a hydrocarbon-based proton conductive polymercoating layer, and has a nano-crack on the hydrophobic surface and thus may secure ion conductivity and self-hydration capability under low humidity and remarkably improve electrochemical performance of an electrolyte..
|Substrate film for manufacturing transparent electrode film|
A transparent electrode film is manufactured by applying a transparent electrode material such as a conductive polymer, carbon nanotubes, graphene or metallic nanowires on the surface of a transparent substrate such as polyester, etc., wherein, in order to reduce changes in the surface resistance of the transparent electrode film during edge testing, photocurable resin layers are formed on both surfaces of the substrate film, and a transparent electrode layer is formed on the surface of either of the resin layers. This technique involves adjusting the degree of photocuring of the photocurable layers formed on both surfaces of the substrate film such that the degree of curing of the photocurable layer on one surface is at least 85%, and the degree of curing of the photocurable resin layer on the other surface falls in the range of 45 to 85% and then the transparent electrode layer is formed thereon..
|Food processing in metal cans|
A method of canning and processing a particulate edible product, the method comprising: providing a metal can body with one open end; filling the metal can body through said open end with the particulate edible product and a volume of liquid, the volume of liquid comprising no more than 30% of the internal volume of the metal can; fixing a lid to the metal can body to close the open end; and using an induction heating process to heat the liquid in the can and thereby process the product.. .
|System and methods for continuous production of proteinaceous patties dressed with food grade particulate|
Provided herein is a continuous production line for a dressed proteinaceous patties with a solid food grade particulate using a coordinated volumetric toothed dispensing cylinder and variable speed conveyor for precisely controlled introduction of the particulate to a stream of proteinaceous material which is then formed into a patty.. .
|Compositions and methods for the diagnosis and therapy of bcl2-associated cancers|
Provided are methods and compositions for the treatment of cancers associated with overexpression of a bcl2 gene and/or gene product in a subject, and methods and compositions for the improvement of anti-cancer therapy, such as chemotherapy and radiation therapy. Also provided are methods for determining the efficacy of a cancer therapy in a subject, methods for diagnosing cancer, methods for assessing patient prognosis, and methods for inducing apoptosis of a cell..
|Non-digestible oligosaccharides for oral induction of tolerance against dietary proteins|
Compositions and methods for providing infant nutrition with partially hydrolysed proteins and non-digestible oligosaccharides for use in induction of oral tolerance against native dietary proteins.. .
|Scr catalyst for removal of nitrogen oxides|
The present invention provides for catalysts for selective catalytic reduction of nitrogen oxides. The catalysts comprise metal oxide supporters, vanadium, an active material, and antimony, a promoter that acts as a catalyst for reduction of nitrogen oxides, and at the same time, can promote higher sulfur poisoning resistance and low temperature catalytic activity.