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Duc patents



      

This page is updated frequently with new Duc-related patent applications.




Date/App# patent app List of recent Duc-related patents
05/26/16
20160150662 
 Electrical circuit and  producing an electrical circuit for activating a load patent thumbnailnew patent Electrical circuit and producing an electrical circuit for activating a load
The current embodiments provide an electrical circuit for controlling an electric motor for a vehicle. The electrical circuit may have a circuit board with a first surface and a second surface opposite the first surface, an intermediate circuit capacitor arranged on the first surface, and a power semiconductor arranged on the second surface and electrically connected with the intermediate circuit capacitor for providing electrical energy to the electric motor.
Zf Friedrichshafen Ag


05/26/16
20160150651 
 Circuit board with embedded passive component and manufacturing method thereof patent thumbnailnew patent Circuit board with embedded passive component and manufacturing method thereof
The present disclosure relates to a semiconductor device substrate and a method for making the same. The semiconductor device substrate includes a first dielectric layer, a second dielectric layer and an electronic component.
Advanced Semiconductor Engineering, Inc.


05/26/16
20160150650 
 Printed circuit board with electronic component embedded therein and  manufacturing the same patent thumbnailnew patent Printed circuit board with electronic component embedded therein and manufacturing the same
Disclosed are an electronic component-embedded printed circuit board and a method of manufacturing the same. An electronic component-embedded printed circuit board includes a laminated structure comprising resin insulation layers and conductive layers laminated alternately, a via formed in the resin insulation layers and electrically connecting the conductive layers to one another, a plurality of connection terminals formed on one surface of the laminated structure, a cavity formed on the other surface of the laminated structure, and an electronic component inserted in the cavity, and a depressed portion in which a surface of the electronic component exposed through an opening of the cavity is depressed in comparison to the other surface of the laminated structure..
Samsung Electro-mechanics Co., Ltd.


05/26/16
20160150649 
 Integrated passive module, semiconductor device and manufacturing method thereof patent thumbnailnew patent Integrated passive module, semiconductor device and manufacturing method thereof
An integrated passive module comprises a ceramic substrate, a planar layer and a thin film laminate. At least one first passive component is embedded in ceramic substrate.

05/26/16
20160150647 
 Printed circuit board copper plane repair patent thumbnailnew patent Printed circuit board copper plane repair
A device has a base with a mounting surface with a length and a stack, the stack having a diameter smaller than the length and fastened to the mounting surface. The stack may have a plurality of stack conductive layers in addition to a plurality of insulating layers that separate each of the plurality of stack conductive layers.
International Business Machines Corporation


05/26/16
20160150643 
 Circuit board patent thumbnailnew patent Circuit board
A circuit board includes a multi-layer structure, a ceramic member, and a first conductive layer. The multi-layer structure has a thru-hole penetrating two opposite board surfaces thereof.
Boardtek Electronics Corporation


05/26/16
20160150642 
 Wiring board and mounting structure using same patent thumbnailnew patent Wiring board and mounting structure using same
A wiring board includes: an inorganic insulating layer having a via hole formed so as to penetrate the inorganic insulating layer in a thickness direction thereof; a conductive layer disposed on the inorganic insulating layer; and a via conductor which adheres to an inner wall of the via hole and is connected with the conductive layer. The inorganic insulating layer includes a first section including a plurality of inorganic insulating particles partly connected to each other, and a resin portion located in gaps between the inorganic insulating particles, and a second section which is interposed between the first section and the via conductor, including a plurality of inorganic insulating particles partly connected to each other, and a conducting portion composed of part of the via conductor which is located in gaps between the inorganic insulating particles..
Kyocera Corporation


05/26/16
20160150640 
 Planar illumination device patent thumbnailnew patent Planar illumination device
A planar illumination device includes: a light guide plate; a point light source disposed to face a light incident surface of the light guide plate; and a circuit substrate on which the point light source is mounted. The circuit substrate includes: a base film; a first conductive layer and a first coverlay film stacked in sequence on a first surface of the base film, the first conductive layer including a pair of lands to which a pair of electrode terminals of the point light source are electrically connected; and a second conductive layer and a second coverlay film stacked in sequence on a second surface of the base film the second coverlay film including a light absorber.
Minebea Co., Ltd.


05/26/16
20160150629 
 Antenna structure and plasma generating device patent thumbnailnew patent Antenna structure and plasma generating device
An antenna structure includes four induction antennas which have the same structure, are connected in parallel and are disposed to be overlapped. The induction antennas include an external upper section arranged on a first quadrant of a first layer, an internal upper section connected to the external upper section and arranged on a second quadrant of the first layer, an internal lower section connected to the internal upper section and arranged on a third quadrant of a second layer arranged on a lower part of the first layer, and an external lower section connected to the internal lower section and arranged on a fourth quadrant of the second layer.
Semes Co., Ltd.


05/26/16
20160150628 
 Antenna structure and plasma generating device patent thumbnailnew patent Antenna structure and plasma generating device
An antenna structure includes four induction antennas which have the same structure, are connected in parallel and are disposed to be overlapped. The induction antennas include an external upper section arranged on a first quadrant of a first layer, an internal upper section connected to the external upper section and arranged on a second quadrant of the first layer, an internal lower section connected to the internal upper section and arranged on a third quadrant of a second layer arranged on a lower part of the first layer, and an external lower section connected to the internal lower section and arranged on a fourth quadrant of the second layer.
Semes Co., Ltd.


05/26/16
20160150600 
new patent

Induction hob and controlling an induction hob


An induction hob has a hob plate, a plurality of induction heating coils arranged under the hob plate and a plurality of sensor coils arranged under the hob plate. The induction heating coils are rectangular, wherein at least two induction heating coils are arranged one behind the other and at least three induction heating coils are arranged one next to the other.
E.g.o. Elektro-geraetebau Gmbh


05/26/16
20160150599 
new patent

Connecting part for mounting on two housing parts and arrangement of two housing parts


A connecting part for mounting on two housing parts of an induction hob has a u-shaped cross section overall, as a channel, as seen in the longitudinal direction and has two segments. The two segments are connected together in a displaceable manner in the longitudinal direction and are secured captively to one another.
E.g.o. Elektro-geraetebau Gmbh


05/26/16
20160150597 
new patent

Cooking controlling the same


A cooking apparatus and a method for controlling the cooking apparatus are provided. The cooking apparatus includes induction heating coils that include a high power burner in which a first heating coil and a second heating coil are concentric.
Samsung Electronics Co., Ltd.


05/26/16
20160150596 
new patent

Power saving induction cooking plate, cooking vessel and induction cooking arrangement


The inventors of the instant invention have realized that blocking the thermal flow from a cooking vessel to the surface of the cooking area can provide power savings up to 4% according to energy measurements. According to embodiments of the invention, spacers (110, .
Electrolux Appliance Aktiebolag


05/26/16
20160150350 
new patent

Method and pairing a wearable device and a smart device


The present disclosure relates to a communication method and system for converging a 5th-generation (5g) communication system for supporting higher data rates beyond a 4th-generation (4g) system with a technology for internet of things (iot). The present disclosure may be applied to intelligent services based on the 5g communication technology and the iot-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services.
Samsung Electronics Co., Ltd.


05/26/16
20160150344 
new patent

Surround sound effects provided by cell phones


Systems and methods that reproduce surround sound effects from an audio source are described. Wireless communication devices form a wireless network in which music, for example, can be played on the speakers of the wireless communication devices to reproduce surround sound effects from a selected audio source.
Google Inc.


05/26/16
20160150332 
new patent

A operating a hearing device as well as a hearing device


A method for operating a hearing device for a user having tinnitus includes converting an acoustic input signal into a corresponding converted input signal, applying a transfer function to the converted input signal for generating a processed input signal, generating a stimulation signal depending on characteristics of a perceived disturbing internal signal resulting from a tinnitus perceived by a prospective user of the hearing device, limiting the stimulation signal by applying a predefined limiting scheme thereby generating a limited stimulation signal, superimposing the limited stimulation signal onto the processed signal thereby generating an output signal, and feeding the output signal to an output transducer for generating a hearing device output signal.. .
Sonova Ag


05/26/16
20160150322 
new patent

Acoustic transducer assembly


Driver for an acoustic transducer having a moving coil of substantially equal length to the air gap. The air gap may itself be extended in length using an upper or lower lip, or both.
Harman Becker Gepkocsirendszer Gyarto Korlatolt Felelossegu Tarsasag


05/26/16
20160150319 
new patent

Method of manufacturing microphone, microphone, and control method therefor


Disclosed are a method of manufacturing a microphone, a microphone, and a control method thereof. The method includes forming a sound sensing module on a main substrate including a first sound aperture such that the sound sensing module is connected to the first sound aperture.
Hyundai Motor Company


05/26/16
20160150312 
new patent

Bone-conduction anvil and diaphragm


Disclosed herein are methods and apparatuses for the transmission of audio information from a bone-conduction headset to a user. The bone-conduction headset may be mounted on a glasses-style support structure.
Google Inc.


05/26/16
20160150311 
new patent

Methods and systems for processing sound waves


One or more specific embodiments disclosed herein includes a headphone device comprising a first ear cup, a speaker transducer capable of producing sound waves, and a first disc comprising a non-woven felt. The first disc comprises a surface.
Peak Audio Llc


05/26/16
20160150308 
new patent

Flexible transducer for soft-tissue and acoustic audio production


The present embodiments relate to techniques (300) and apparatuses (100, 500) for implementing a flexible transducer for soft-tissue audio production. These techniques (300) and apparatuses (100, 500) enable an audio-production device (102) having a flexible transducer (116, 402) conformed to a person's pinna to create audio within the person's external ear canal..
Google Inc.


05/26/16
20160150304 
new patent

Magnetic levitation audio device


A magnetic levitation audio device is disclosed. The magnetic levitation audio device comprises a magnetic levitation base capable of generating a magnetic field and a sound box levitated above the magnetic levitation base through a magnetic force.
Atake Digital Technology (shenzhen) Co., Ltd.


05/26/16
20160150227 
new patent

Minimum-spacing circuit design and layout for pica


Methods for testing the resolution of an imaging device include forming a plurality of semiconductor devices having proximal light emitting regions, such that the light emitting regions are grouped into distinct shapes separated by a distance governed by a target resolution size. The semiconductor devices are activated by providing an input signal.
International Business Machines Corporation


05/26/16
20160149573 
new patent

Logic circuit and semiconductor device including logic circuit


A logic circuit that can retain a state even without power supply is provided. The logic circuit includes a first circuit, a pair of retention circuits, and a second circuit.
Semiconductor Energy Laboratory Co., Ltd.


05/26/16
20160149567 
new patent

Semiconductor device and electronic device


In a configuration including a first circuit for retaining a plurality of analog voltages and a second circuit capable of reading one of the analog voltages as a digital signal, correct data can be read even when characteristics of transistors in the first and second circuits vary with the temperature change. A reference voltage is applied to a gate of a transistor in the second circuit whose threshold voltage varies with the temperature change, and a corrected reference voltage is generated by adding a threshold voltage variation of the transistor in the second circuit to the reference voltage.
Semiconductor Energy Laboratory Co., Ltd.


05/26/16
20160149565 
new patent

Semiconductor device and operating method thereof


A semiconductor device may include: a variable delay circuit configured to delay a data strobe signal according to a delay control signal and output a delayed data strobe signal; a data sampler configured to compare a level of a reference voltage and a value of a data signal in synchronization with the delayed data strobe signal, and determine a logic level of the value of the data signal, the data signal having a training pattern; and a control circuit configured to determine a delay amount of the data strobe signal and generate the delay control signal and the reference voltage according to an output signal of the data sampler.. .
Seoul National University R&db Foundation


05/26/16
20160149563 
new patent

Semiconductor device


A semiconductor device includes a first variable delay circuit that delays inputted multiphase signals according to a delay control signal, a selection circuit that selects and outputs two signals of signals output from the first variable delay circuit, a second variable delay circuit that delays one of the two signals according to the delay control signal, a phase comparison circuit that compares a phase of a signal outputted by the second variable delay circuit with a phase of the other of the two signals, a filter that updates the delay control signal according to a signal outputted by the phase comparison circuit, and a delay control signal selection circuit that provides the delay control signal to the first variable delay circuit or the second variable delay circuit.. .
Korea Advanced Institute Of Science And Technology


05/26/16
20160149553 
new patent

Electroacoustic transducer with improved suppression of unwanted modes


An improved electroacoustic transducer with an improved mode profile is provided. The transducer comprises a velocity profile with a periodic structure and an edge structure flanking the periodic structure.
Epcos Ag


05/26/16
20160149543 
new patent

Linear row array integrated power combiner for rf power amplifiers


A novel and useful radio frequency (rf) front end module (fem) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 wlan, 3g and 4g cellular standards, bluetooth, zigbee, etc. The configuration of the fem circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard cmos processes.
Dsp Group Ltd.


05/26/16
20160149514 
new patent

Device and safe control of a semiconductor switch of an inverter


A device for safe control of at least one driver module for controlling a semiconductor switch of an inverter, wherein the driver module controls the semiconductor switch in dependence on a pulse signal, wherein a switching arrangement which is connected with the driver module is provided and that this has a switching connection for applying an inhibition signal and a first connection for applying the pulse signal, in order to either inhibit or switch the pulse signal applied to the first connection through to the driver module, depending on the inhibition signal.. .
Bernecker + Rainer Industrie-elektronik Ges.m.b.h.


05/26/16
20160149434 
new patent

Opportunistic charging of an electronic device


One embodiment of the present invention sets forth a technique for charging an electronic device. The technique includes determining that the electronic device is proximate to a first induction coil that is included in a plurality of induction coils that are disposed in a steering wheel.
Harman International Industries, Inc.


05/26/16
20160149403 
new patent

Electrostatic protection circuit and semiconductor integrated circuit apparatus


This electrostatic protection circuit makes it possible for a discharge operation to be started only in the case where a rise in an applied voltage is steep, and for static electricity to be sufficiently released. This electrostatic protection circuit includes a discharge circuit that is connected between a first node and a second node and discharges charge produced by static electricity, a latch circuit that is connected between the first node and the second node and outputs a signal that controls operation of the discharge circuit to the discharge circuit, a switch circuit that is connected to the latch circuit and changes the signal that controls operation of the discharge circuit, and a control circuit that is connected between the first node and the second node and outputs a signal that controls operation of the switch circuit to the switch circuit..
Seiko Epson Corporation


05/26/16
20160149379 
new patent

Semiconductor laser and optical integrated light source including the same


A semiconductor laser according to the present invention includes an active layer, a guide layer laminated on the active layer, a diffraction grating formed along a light emission direction in the guide layer, an upper electrode provided above the guide layer, and a lower electrode provided below the active layer. The diffraction grating includes a current-injection diffraction grating and current-non-injection diffraction gratings provided both in front of and in back of the current-injection diffraction grating.
Mitsubishi Electric Corporation


05/26/16
20160149378 
new patent

Optical amplification device


An optical amplification device includes: a semiconductor optical amplifier; a first detector that detects an input optical power of the semiconductor optical amplifier; a second detector that detects an output optical power of the semiconductor optical amplifier; and a controller that controls a driving current of the semiconductor optical amplifier, wherein the controller supplies a predetermined driving current to the semiconductor optical amplifier when an optical signal is not input to the semiconductor optical amplifier, the second detector detects an optical power of amplified spontaneous emission (ase) output from the semiconductor optical amplifier when the predetermined driving current is supplied to the semiconductor optical amplifier, and the controller controls the driving current of the semiconductor optical amplifier based on the input optical power of the semiconductor optical amplifier detected by the first detector, and the optical power of the ase.. .
Fujitsu Limited


05/26/16
20160149377 
new patent

Optoelectronic oscillator


An optoelectronic oscillator for generating an optical and/or electric pulse comb, comprising a monolithically integrated passively mode-coupled semiconductor laser and an optical feedback loop which guides a part of the optical radiation of the semiconductor laser and feeds said part back into the semiconductor laser as feedback pulses. Without the influence of the feedback pulses, the semiconductor laser would emit comb-like optical pulses, hereafter referred to as primary pulses, and in the event of an influence, emits comb-like output pulses which have been influenced by the feedback pulses, said output pulses having a lower temporal jitter or less phase noise than the primary pulses.
Technische Universität Berlin


05/26/16
20160149320 
new patent

Center conductor tip


A tip end conductor for an inner conductor of a coaxial cable, comprising a first portion engaging a first region of the outermost tip to mechanically engage the inner conductor and a second portion, axially inboard of the first portion, engaging a second region of the outermost tip to electrically engage the inner conductor. The first and second portions define first and second diameter dimensions, respectively, wherein the first diameter dimension is less than the second diameter dimension, and wherein the first portion of the tip end conductor includes a mechanically irregular surface for being press fit onto, and producing, a mechanical interlock along a first region of the terminal end of the inner conductor..
John Mezzalingua Associates, Llc


05/26/16
20160149318 
new patent

Matable and dematable electrical connecting structure and connector for electrical connection which includes same, semiconductor package assembly, and electronic device


The present invention discloses a matable and dematable electrical connecting structure characterized by comprising: a female coupling member having a first connecting portion; a male coupling member having a second connecting portion; and a connecting unit coupling the female coupling member and the male coupling member and electrically connecting the first and second connecting portions, wherein the connecting unit includes an inner conductive material which is electrically connected to the first connecting portion and is provided on the inner wall of an insert hole formed in the female connecting member, a column including a conductive material which is electrically connected to the second connecting portion, protruding from the male connecting member, and can be inserted in the insert hole, and one or more elastic pin including a surface of a conductive material which is extending in an outward direction from the column and elastically contacting the inner conductive material.. .
Oci Corporation


05/26/16
20160149314 
new patent

Dual band multi-layer dipole antennas for wireless electronic devices


A wireless electronic device includes a printed circuit board (pcb) with first, second, and third conductive layers separated from one another by dielectric layers. A stripline is included in the first conductive layer.
Sony Corporation


05/26/16
20160149313 
new patent

Electromagnetic field induction for inter-body and transverse body communication


A electromagnetic induction wireless communication system including: a magnetic antenna; an electric antenna; a tuning capacitor coupled to the antenna combination configured to tune the antenna combination; a controller configured to control the operation of the communication system; a signal source coupled to the controller configured to produce a communication signal used to drive the magnetic antenna and the electric antenna; a voltage control unit coupled to the signal source configured to produce one of an amplitude difference, phase difference, and an amplitude and a phase difference between the communication signal used to drive the magnetic antenna and electric antenna.. .
Nxp, B.v.


05/26/16
20160149304 
new patent

Semiconductor device and transmission-reception system


An object of the invention is to transmit a waveform suitable for the reception of signals, while suppressing an increase in man-hours needed for design. A transmission-reception device (2) includes: an antenna element (21) which is terminated at a virtual ground point side of the antenna element by a terminating element (213); a conductor plane (23) which has a predetermined potential and surrounds the antenna element (21); and a transmission circuit (25) that outputs a differential signal to both ends of the antenna element (21).
Renesas Electronics Corporation


05/26/16
20160149281 
new patent

Coplanar waveguide structure


A coplanar waveguide structure is provided, which includes a transparent substrate, a center conductor, a first ground conductor and a second ground conductor. The center conductor is disposed on the transparent substrate.
Metal Industries Research & Development Centre


05/26/16
20160149271 
new patent

Battery management system


An isolation apparatus includes isolation circuitry that includes multiple semiconductor switches arranged electrically in parallel to isolate, from an electrical system, a plurality of battery cells of a battery capable of providing high levels of current. The apparatus includes a microcontroller operatively coupled to the isolation circuitry, wherein the battery cells are isolated from the electrical system to which the battery is connected when the microcontroller switches off the multiple semiconductor switches.
Rocketship, Inc.


05/26/16
20160149227 
new patent

Metal gas diffusion layer for fuel cells, and manufacturing the same


A method for manufacturing a metal gas diffusion layer made of a metal porous body, the method includes forming a conductive layer of carbon film layer on the metal porous body, and forming a water-repellent layer on the metal porous body formed with the conductive layer. The forming a water-repellent layer includes coating a solution containing a fluorine resin which constitutes the water-repellent layer and a volatile component which does not constitute the water-repellent layer on the metal porous body, and heat-treating the metal porous body coated with the solution at or above a temperature at which a component which contains the volatile component and which does not constitute the water-repellent layer contained in the solution and less than a temperature at which an electrical resistance of the conductive layer is increased and electron conductivity is deteriorated to thereby form the water-repellent layer composed of the fluorine resin..
Nissan Motor Co., Ltd.


05/26/16
20160149225 
new patent

Oxygen reduction catalyst and use thereof


An oxygen reduction catalyst which includes composite particles including a portion including an inorganic metal compound and a portion containing carbon. The composite particles include a metal element m1, carbon, and oxygen as constituent elements; the amount of carbon atoms is 1 to 10 mol, and the amount of oxygen atoms is 1 to 3 mol, assuming that the total amount of atoms in the metal element m1 is 1 mol; a g-band and a d-band are present in a raman spectrum, and a v/g ratio defined in an expression described below is 0.10 to 0.35: v/g ratio=(minimum value of spectral intensity in region v which is a region between g-band and d-band)/(peak intensity in g-band)..
Show Denko K.k.


05/26/16
20160149154 
new patent

Organic light emitting diode display device and manufacturing the same


An oled display device includes a driving semiconductor layer on a substrate, a gate insulating layer covering the driving semiconductor layer, a driving gate electrode and etching preventing layer on the gate insulating layer, a passivation layer on the gate insulating layer, driving gate electrode, and etching preventing layer, and including a plurality of protruding and depressed patterns, driving source and drain electrodes on the passivation layer, a pixel electrode on the protruding and depressed pattern, and exposed etching preventing layer, the pixel electrode having a protruding and depressed shape, a pixel definition layer on the passivation layer, and the driving source and drain electrodes, and having a pixel opening exposing the pixel electrode, an organic emission layer on the exposed pixel electrode, and a common electrode on the organic emission layer and pixel definition layer. The protruding and depressed pattern partially exposes the etching preventing layer..
Samsung Display Co., Ltd.


05/26/16
20160149149 
new patent

Organic thin-film solar cell and organic thin-film solar cell manufacturing method


Provided is an organic thin-film solar cell, including: a substrate, an anode, an organic thin-film layer that includes an organic semiconductor layer, and a cathode. The anode, the organic thin-film layer that includes the organic semiconductor layer, and the cathode are layered in order on top of the substrate.
Oji Holdings Corporation


05/26/16
20160149146 
new patent

Method for making thin film transistor


A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, an insulating layer and a gate electrode.
Hon Hai Precision Industry Co., Ltd.


05/26/16
20160149143 
new patent

Organic semiconductor compound, organic thin film including same, and electronic device including the organic thin film


An organic semiconductor compound represented by chemical formula 1 is highly fused due to fusion of greater than or equal to 4 rings, and has smooth intermolecular charge transfer due to relatively high planarity.. .
Samsung Electronics Co., Ltd.


05/26/16
20160149138 
new patent

Bithiophene sulfonamide-based molecular and polymeric semiconductors


The present invention relates to new semiconducting compounds having at least one optionally substituted bithiophene sulfonamide moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions..
Polyera Corporation


05/26/16
20160149137 
new patent

Conductive organic semiconductor compound, preparing the same and organic thin-film transistor including the same


The present disclosure provides an organic semiconductor compound, which has superior charge mobility, low band gap, wide light absorption area and adequate molecular energy level. The conductive organic semiconductor compound of the present disclosure can be used as a material for various organic optoelectric devices such as an organic photodiode (opd), an organic light-emitting diode (oled), an organic thin-film transistor (otft), an organic solar cell, etc.
Korea Institute Of Science And Technology


05/26/16
20160149129 
new patent

Using metal silicides as electrodes for msm stack in selector for non-volatile memory application


Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching.
Intermolecular, Inc.


05/26/16
20160149128 
new patent

Diamond like carbon (dlc) as a thermal sink in a selector stack for non-volatile memory application


Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching.
Intermolecular, Inc.


05/26/16
20160149125 
new patent

Resistive memory device and fabrication method thereof


A semiconductor integrated circuit device and a fabrication method thereof are disclosed. The resistive memory device includes a lower electrode, a resistive layer formed in a resistance change region on the lower electrode, an upper electrode formed on the resistive layer, and an insertion layer configured to allow a reset current path of the resistive layer, which is formed from the upper electrode to the lower electrode, to be bypassed in a direction perpendicular to or parallel to a surface of the lower electrode..
Sk Hynix Inc.


05/26/16
20160149122 
new patent

Methods for fabricating magnetic devices and associated systems and devices


A method for exposing a photoresist material to light includes the following steps: (1) optically coupling the light to an optical mask via a prism and a first liquid layer joining the prism and the optical mask, (2) masking the light using the optical mask, and (3) optically coupling the masked light to the photoresist material. The method is used, for example, to fabricate a magnetic device on a semiconductor substrate.
The Trustees Of Dartmouth College


05/26/16
20160149121 
new patent

Electronic device and fabricating the same


This technology provides an electronic device and method for fabricating the same. A method for fabricating an electronic device comprising a transistor includes forming a junction region which is partially amorphized in the semiconductor substrate at a side of the gate; forming a metal layer over the junction region; and performing a heat treatment process on the metal layer into a metal-semiconductor compound layer while crystallizing the junction region..
Sk Hynix Inc.


05/26/16
20160149120 
new patent

Electronic device and fabricating the same


This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes an interlayer dielectric layer formed over a substrate and having a hole; a conductive pattern filled in the hole and having a top surface located at a level substantially same as a top surface of the interlayer dielectric layer; and an mtj (magnetic tunnel junction) structure formed over the conductive pattern to be coupled to the conductive pattern and including a free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein an upper portion of the conductive pattern includes a first amorphous region..
Sk Hynix Inc.


05/26/16
20160149118 
new patent

Compound semiconductor device and manufacturing the same


A compound semiconductor device includes: a flexible part; a first nitride semiconductor layer above a surface of the flexible part, the first nitride semiconductor layer including a first polar plane and a second polar plane intersecting the surface; a second nitride semiconductor layer in contact with the first nitride semiconductor layer on the first polar plane, a lattice constant of the second nitride semiconductor layer being different from that of the first nitride semiconductor layer; a third nitride semiconductor layer in contact with the first nitride semiconductor layer on the second polar plane, a lattice constant of the third nitride semiconductor layer being different from that of the first nitride semiconductor layer; a first ohmic electrode above an interface between the first nitride semiconductor layer and the second nitride semiconductor layer; and a second ohmic electrode above an interface between the first nitride semiconductor layer and the third nitride semiconductor layer.. .
Fujitsu Limited


05/26/16
20160149111 
new patent

Magnetic flux-to-voltage transducer based on josephson junction arrays


A device and method for converting magnetic flux to voltage uses a fraunhofer pattern of a 1d array of long josephson junctions. The 1d array of josephson junctions may include from 1 to 109 junctions formed in a planar geometry with a bridge width within the range of 4-10 μm..
The Regents Of The University Of California


05/26/16
20160149110 
new patent

P-type semiconductor composed of magnesium, silicon, tin, and germanium, and manufacturing the same


A manufacturing method for a p-type semiconductor formed by sintering a compound represented by the general chemical formula: mg2sixsnygez (where x+y+z=1, x>0, and y>0, z>0). The p-type semiconductor has a composition in which x is in the range of 0.00<x≦0.25, and z satisfies the relationship: −1.00x+0.40≧z≧−2.00x+0.10, where z>0.00, and y is in the range of 0.60≦y≦0.95, and z satisfies either of the relationships: −1.00y+1.00≧z≧−1.00y+0.75, where 0.60≦y≦0.90 and z>0.00, and −2.00y+1.90≧z≧−1.00y+0.75, where 0.90≦y≦0.95 and z>0.00..
Mitsuba Corporation


05/26/16
20160149101 
new patent

Optoelectronic semiconductor component


In at least one embodiment, the optoelectronic semiconductor component (1) comprises a cast body (4). At least one optoelectronic semiconductor chip (3) is designed to generate radiation and is situated in a recess (43) in the cast body (4).
Osram Opto Semicouductors Gmbh


05/26/16
20160149092 
new patent

Optoelectronic component


An optoelectronic component includes a semiconductor chip that emits a primary radiation in the short-wave blue spectral range at a dominant wavelength of less than approximately 465 nm; and a phosphor that converts at least part of the primary radiation into a longer-wave secondary radiation in the green spectral range at a dominant wavelength of between approximately 490 nm and approximately 550 nm and at least partly surrounds the semiconductor chip, wherein a mixed light composed of primary radiation and secondary radiation has a dominant wavelength at wavelengths of approximately 460 nm to approximately 480 nm such that a luminous flux of the mixed light is up to 130% greater than a luminous flux in an optoelectronic component without a phosphor having the same dominant wavelength in a range of 460 nm to 480 nm, and the phosphor is arranged in a lamina that bears directly on the semiconductor chip.. .
Osram Opto Semiconductors Gmbh


05/26/16
20160149091 
new patent

Light-emitting material, producing same, optical film, and light-emitting device


The purpose of the invention is to provide a high-transparency light-emitting material of sufficient durability to minimize long-term degradation of semiconductor nanoparticles due to oxygen, etc.; and a method for producing said material. This light-emitting material is characterized in containing semiconductor nanoparticles, a metal alkoxide, and a silicon compound..
Konica Minolta, Inc.


05/26/16
20160149090 
new patent

Radiation-emitting optoelectronic device


A radiation-emitting optoelectronic device is provided. The radiation-emitting optoelectronic device includes a semiconductor chip that, when the device is in operation, emits primary radiation of a wavelength of between 600 nm and 1000 nm.
Osram Opto Semiconductors Gmbh


05/26/16
20160149089 
new patent

Semiconductor light emitting apparatus


A semiconductor light emitting apparatus comprised of a semiconductor light emitting device (100) having a layered semiconductor layer (110) configured by layering at least two or more semiconductor layers (103), (105) and a light emitting layer (104) to emit first light, and a wavelength conversion member that covers at least apart of the semiconductor light emitting device (100), absorbs at least a part of the first light and that emits second light with a wavelength different from that of the first light, characterized in that the semiconductor light emitting device (100) is provided with a fine structure layer, as a component, including dots comprised of a plurality of convex portions or concave portions extending in the out-of-plane direction on one of main surfaces forming the semiconductor light emitting device (100), the fine structure layer forms a two-dimensional photonic crystal (102) controlled by at least one of a pitch among the dots, a dot diameter and a dot height, and that the two-dimensional photonic crystal (102) has at least two or more periods each of 1 μm or more.. .
Asahi Kasei E-materials Corporation


05/26/16
20160149088 
new patent

Compact emitter for warm dimming and color tunable lamp


A substrate for an led emitter includes a body with a recess region formed therein. Bonding pads are disposed within the recess region, including led bonding pads for leds and supporting chip bonding pads for one or more semiconductor chips that provide supporting circuitry (e.g., driver and/or controller circuitry) to support operation of the leds.
Ledengin, Inc.


05/26/16
20160149086 
new patent

Semiconductor light emitting device and semiconductor light emitting apparatus having the same


Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked..

05/26/16
20160149085 
new patent

Method of manufacturing light emitting element


A method of manufacturing a semiconductor light emitting element includes forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body including a first semiconductor layer and a second semiconductor layer; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion.. .
Nichia Corporation


05/26/16
20160149083 
new patent

Semiconductor material including different crystalline orientation zones and related production process


The intermediate layer being intended to be vaporised spontaneously during the step consisting of growing the layer of element iii nitride via epitaxy.. .

05/26/16
20160149081 
new patent

Semiconductor light emitting element


According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light.
Kabushiki Kaisha Toshiba


05/26/16
20160149080 
new patent

Light emitting diode


A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate.
Hon Hai Precision Industry Co., Ltd.


05/26/16
20160149079 
new patent

Pattern wafer for leds, epitaxial wafer for leds and manufacturing the epitaxial wafer for leds


A pattern wafer (10) for leds is provided with an uneven structure a (20) having an arrangement with n-fold symmetry substantially on at least a part of the main surface, where in at least a part of the uneven structure a (20), a rotation shift angle Θ meets 0°<Θ≦(180/n)° in which Θ is the rotation shift angle of an arrangement axis a of the uneven structure a (20) with respect to a crystal axis direction in the main surface, and a top of the convex-portion of the uneven structure a (20) is a corner portion with a radius of curvature exceeding “0”. A first semiconductor layer (30), light emitting semiconductor layer (40) and second semiconductor layer (50) are layered on the uneven structure a (20) to constitute an epitaxial wafer (100) for leds.
Asahi Kasei E-materials Corporation


05/26/16
20160149078 
new patent

Nitride semiconductor light-emitting device


An object is to improve a positive hole injection efficiency into an active layer in a nitride semiconductor light-emitting device. The nitride semiconductor light-emitting device is formed by stacking nitride semiconductor crystals each of which contains al and has a polar or semipolar surface either serving as a growth face.
Meijo University


05/26/16
20160149077 
new patent

Light-emitting diode and manufacturing the same


The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a n-type metal electrode, a n-type semiconductor layer contacted with the n-type metal electrode, a p-type semiconductor layer, a light-emitting layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, a low-contact-resistance material layer positioned on the p-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the p-type semiconductor layer, and a p-type metal electrode positioned on the transparent conductive layer..
Lextar Electronics Corporation


05/26/16
20160149076 
new patent

Led element and manufacturing the same


An led element comprises a semiconductor lamination part that includes a light-emitting layer, a diffractive surface on which light emitted from the light-emitting layer is incident and on which projection parts are formed with a period larger than an optical wavelength of the light and smaller than a coherence length of the light and which reflects the incident light in a plurality of modes according to a bragg diffraction condition and transmits the incident light in a plurality of modes according to the bragg diffraction condition, and a reflecting surface that reflects light refracted by the diffractive surface so that the reflected light is incident on the diffractive surface again, wherein the semiconductor lamination part is formed on the diffractive surface without any void around the projection parts and a proportion of a flat part in the diffractive surface is 40% or more in a plan view thereof.. .

05/26/16
20160149075 
new patent

Optoelectronic device


An optoelectronic device comprising a semiconductor structure includes a p-type active region and an n-type active region. The semiconductor structure is comprised solely of one or more superlattices, where each superlattice is comprised of a plurality of unit cells.
The Silanna Group Pty Ltd.


05/26/16
20160149074 
new patent

Advanced electronic device structures using semiconductor structures and superlattices


Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed.
The Silanna Group Pty Ltd.


05/26/16
20160149072 
new patent

Method for making light-emitting device


A method for making a light-emitting device comprises the steps of: providing a growth substrate; forming a first light-emitting semiconductor stack on the growth substrate by epitaxial growth, and the first light-emitting semiconductor stack comprises a first active layer; forming a distributed bragg reflector on the first light-emitting semiconductor stack by epitaxial growth; forming a second light-emitting semiconductor stack on the distributed bragg reflector by epitaxial growth, and the second light-emitting semiconductor stack comprises a second active layer; and wherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength.. .
Epistar Corporation


05/26/16
20160149070 
new patent

Light-receiving element and production method therefor


A light-receiving element includes a semiconductor layer with a pn junction part and a pair of electrodes that interpose the pn junction part. Near field light is generated in the vicinity of the pn junction part by applying a forward bias voltage between the pair of electrodes and irradiating the pn junction with light that has a specific wavelength, and an electrode of the irradiated pair of electrodes is configured with a wire grid polarizer that transmits the light that has the specific wavelength..
V Technology Co., Ltd.


05/26/16
20160149057 
new patent

Semiconductor device


A semiconductor device includes a substrate including a first impurity diffusion region having a first doping concentration and at least one second impurity diffusion region having a second doping concentration different from the first doping concentration, the at least one second impurity region being surrounded by the first impurity diffusion region; at least one electrode facing the first impurity diffusion region and the at least one second impurity diffusion region; and at least one insulating layer between the first impurity diffusion region and the at least one electrode, and between the at least one second impurity diffusion region and the at least one electrode.. .
Samsung Electronics Co., Ltd.


05/26/16
20160149056 
new patent

Semiconductor device manufacturing method, and semiconductor device


A semiconductor device manufacturing method according to an embodiment includes: forming an n-type sic layer on a sic substrate; forming a p-type impurity region at one side of the sic layer; exposing other side of the sic layer by removing at least part of the sic substrate; implanting carbon (c) ions into exposed part of the sic layer; performing a heat treatment; forming a first electrode on the p-type impurity region; and forming a second electrode on the exposed part of the sic layer.. .
Kabushiki Kaisha Toshiba


05/26/16
20160149055 
new patent

Semiconductor device and memory device


The present invention provides a transistor having a high on-state current. The transistor includes a plurality of fins, a first oxide semiconductor, a gate insulating film, and a gate electrode.
Semiconductor Energy Laboratory Co., Ltd.


05/26/16
20160149054 
new patent

Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts


An approach to forming a semiconductor structure for a vertical field effect transistor with a controlled gate overlap. The approach includes forming on a semiconductor substrate, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a fifth semiconductor layer, and a first dielectric layer.
International Business Machines Corporation


05/26/16
20160149052 
new patent

Thin film transistor, organic light-emitting diode display including the same, and manufacturing method thereof


A tft, oled display including the same, and manufacturing method thereof are disclosed. In one aspect, the tft includes a first gate electrode formed over a substrate and a first insulating layer formed over the substrate and the first gate electrode.
Samsung Display Co., Ltd


05/26/16
20160149051 
new patent

Transistors incorporating small metal elements into doped source and drain regions


Metal quantum dots are incorporated into doped source and drain regions of a mosfet array to assist in controlling transistor performance by altering the energy gap of the semiconductor crystal. In a first example, the quantum dots are incorporated into ion-doped source and drain regions.
Stmicroelectronics, Inc.


05/26/16
20160149050 
new patent

Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels


An approach to providing a barrier in a vertical field effect transistor with low effective mass channel materials wherein the forming of the barrier includes forming a first source/drain contact on a semiconductor substrate and forming a channel with a first channel layer on the first source/drain contact. The approach further includes forming the barrier on the first channel layer, and a second channel layer on the barrier followed by forming a second source/drain contact on the second channel layer..
International Business Machines Corporation


05/26/16
20160149049 
new patent

Ruthenium nucleation layer for control gate electrodes in a memory structure


A memory film and a semiconductor channel can be formed within each memory opening that extends through a stack including an alternating plurality of insulator layers and sacrificial material layers. After formation of backside recesses through removal of the sacrificial material layers selective to the insulator layers, a ruthenium portion can be formed in each backside recess, and a polycrystalline conductive material portion can be formed on each ruthenium portion.
Sandisk Technologies, Inc.


05/26/16
20160149048 
new patent

Oxide semiconductor film and formation method thereof


To provide a crystalline oxide semiconductor film, an ion is made to collide with a target including a crystalline in—ga—zn oxide, thereby separating a flat-plate-like in—ga—zn oxide in which a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including an indium atom and an oxygen atom, and a third layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order; and the flat-plate-like in—ga—zn oxide is irregularly deposited over a substrate while the crystallinity is maintained.. .
Semiconductor Energy Laboratory Co., Ltd.


05/26/16
20160149047 
new patent

Thin-film transistor and manufacturing the same field


According to one embodiment, a thin-film transistor and a method of manufacturing the same achieve size reduction of the thin-film transistor while using an oxide semiconductor layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region.
Japan Display Inc.


05/26/16
20160149046 
new patent

Thin-film transistor and manufacturing the same


According to one embodiment, a thin-film transistor and a method of manufacturing the thin-film transistor provided herein achieve enhanced reliability by preventing a disconnection in a gate insulating film at a position corresponding to an end surface of an oxide semiconductor layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region.
Japan Display Inc.


05/26/16
20160149045 
new patent

Semiconductor device


A semiconductor device includes a first conductor, a second conductor, a first insulator, a second insulator, a third insulator, a semiconductor, and an electron trap layer. The semiconductor includes a channel formation region.
Semiconductor Energy Laboratory Co., Ltd.


05/26/16
20160149044 
new patent

Semiconductor device and electronic device


To provide a highly reliable semiconductor device that is suitable for miniaturization and higher density. A semiconductor device includes a first electrode including a protruding portion, a first insulator over the protruding portion, a second insulator covering the first electrode and the first insulator, and a second electrode over the second insulator.
Semiconductor Energy Laboratory Co., Ltd.


05/26/16
20160149042 
new patent

Semiconductor device and manufacturing the same, and display unit and electronic apparatus


Provided is a semiconductor device, including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode are stacked in order, in which the oxide semiconductor film includes a first region portion and a second region portion. The oxide semiconductor film includes indium (in), zinc (zn), and one or more of tin (sn), gallium (ga), and aluminum (al).
Sony Corporation


05/26/16
20160149041 
new patent

Semiconductor devices and finfets


Semiconductor devices and fin field effect transistors (finfets) are disclosed. In some embodiments, a representative semiconductor device includes a group iii material over a substrate, the group iii material comprising a thickness of about 2 monolayers or less, and a group iii-v material over the group iii material..
Taiwan Semiconductor Manufacturing Company, Ltd.


05/26/16
20160149035 
new patent

Semiconductor device and fabricating same


A semiconductor device and method of fabricating the semiconductor device are disclosed. The method includes forming a plurality of gate electrodes at a predetermined interval on a surface of a semiconductor substrate, forming spacers on sidewalls of the gate electrodes, depositing an interconnection layer conformally on the surface of the semiconductor substrate over the gate electrodes and the spacers, selectively etching the interconnection layer, wherein at least a portion of the interconnection layer that is formed on the surface of the semiconductor substrate and sidewalls of the spacers and located between adjacent gate electrodes remains after the selective etch, and forming an electrical contact on the etched interconnection layer located between the adjacent gate electrodes..
Semiconductor Manufacturing International (shanghai) Corporation


05/26/16
20160149034 
new patent

Power semiconductor device having low on-state resistance


A power semiconductor device having low on-state resistance includes a substrate having an epitaxial layer formed thereon, a gate structure, a termination structure, and a patterned conductive layer. The epitaxial layer has at least a first trench and a second trench.
Sinopower Semiconductor, Inc.


05/26/16
20160149032 
new patent

Power transistor with field-electrode


A semiconductor device includes at least two transistor cells. Each of these at least two transistor cells includes: a drain region, a drift region, and a body region in a semiconductor fin of a semiconductor body; a source region adjoining the body region; a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric; and a field electrode dielectrically insulated from the drift region by a field electrode dielectric, and connected to the source region.
Infineon Technologies Dresden Gmbh


05/26/16
20160149031 
new patent

Semiconductor devices including patterns in a source region


Semiconductor devices are provided. A semiconductor device includes a substrate including a well region.

05/26/16
20160149030 
new patent

Semiconductor device using three dimensional channel


According to example embodiments, a semiconductor device includes a first fin, a second fin that is separated from the first fin, and a gate on the first fin and the second fin. The gate crosses the first fin and the second fin.

05/26/16
20160149029 
new patent

Semiconductor device and manufacturing semiconductor device


A semiconductor device includes a semiconductor substrate including a trench, a gate insulating layer, and a gate electrode. A step is arranged in a side surface of the trench.
Toyota Jidosha Kabushiki Kaisha


05/26/16
20160149028 
new patent

Semiconductor device with charge compensation region underneath gate trench


A semiconductor substrate has a main surface and a rear surface vertically spaced apart from the main surface, a first doped region, a second doped region and a third doped region. The third doped region is interposed between the first and second doped regions beneath the main surface.
Infineon Technologies Austria Ag


05/26/16
20160149027 
new patent

Asymmetrical finfet structure and manufacturing same


A method of fabricating an asymmetric finfet is provided in the invention, comprising: a. Providing a substrate (101); b.
Institute Of Microelectronics, Chinese Academy Of Sciences


05/26/16
20160149026 
new patent

Vertical dmos transistor


A transistor includes a semiconductor body; a body region of a first conductivity type formed in the semiconductor body; a gate electrode formed partially overlapping the body region and insulated from the semiconductor body by a gate dielectric layer; a source diffusion region of a second conductivity type formed in the body region on a first side of the gate electrode; a trench formed in the semiconductor body on a second side, opposite the first side, of the gate electrode, the trench being lined with a sidewall dielectric layer; and a doped sidewall region of the second conductivity type formed in the semiconductor body along the sidewall of the trench where the doped sidewall region forms a vertical drain current path for the transistor.. .
Alpha And Omega Semiconductor Incorporated


05/26/16
20160149025 
new patent

Semiconductor device and manufacturing the same


Provided is a technique of securing reliability of a gate insulating film, as much as in a si power mosfet, in a semiconductor device in which a semiconductor material having a larger band gap than silicon is used, and which is typified by, for example, an sic power mosfet. In order to achieve this object, in the in the sic power mosfet, the gate electrode ge is formed in contact with the gate insulating film gox, and is formed of the polycrystalline silicon film pf1 having the thickness equal to or smaller than 200 nm, and the polycrystalline silicon film pf2 formed in contact with the polycrystalline silicon film pf1, and having any thickness..
Hitachi Ltd.


05/26/16
20160149024 
new patent

High-electron mobility transistor and process to form the same


An electron device formed by primarily nitrides semiconductor materials and a method to form the electron device are disclosed. The electron device includes, on the sic substrate, a buffer layer of aln, a channel layer of gan, and an electron supplying layer of algan.
Sumitomo Electric Industries, Ltd.


05/26/16
20160149023 
new patent

Semiconductor device including a superlattice and replacement metal gate structure and related methods


A semiconductor device may include a substrate having a channel recess therein, a plurality of spaced apart shallow trench isolation (sti) regions in the substrate, and source and drain regions spaced apart in the substrate and between a pair of the sti regions. A superlattice channel may be in the channel recess of the substrate and extend between the source and drain regions, with the superlattice channel including a plurality of stacked group of layers, and each group of layers of the superlattice channel including stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
Mears Technologies, Inc.


05/26/16
20160149022 
new patent

Heterojunction field effect transistor (hfet) variable gain amplifier having variable transconductance


A heterojunction semiconductor field effect transistor hfet having a pair of layers of different semiconductor materials forming a quantum well within the structure to support the 2deg. Source, drain and gate electrodes are disposed above the channel.
Raytheon Company


05/26/16
20160149021 
new patent

Vertically integrated semiconductor device and manufacturing method


A vertically integrated semiconductor device in accordance with various embodiments may include: a first semiconducting layer; a second semiconducting layer disposed over the first semiconducting layer; a third semiconducting layer disposed over the second semiconducting layer; and an electrical bypass coupled between the first semiconducting layer and the second semiconducting layer.. .
Infineon Technologies Ag


05/26/16
20160149020 
new patent

Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels


An approach to providing a barrier in a vertical field effect transistor with low effective mass channel materials wherein the forming of the barrier includes forming a first source/drain contact on a semiconductor substrate and forming a channel with a first channel layer on the first source/drain contact. The approach further includes forming the barrier on the first channel layer, and a second channel layer on the barrier followed by forming a second source/drain contact on the second channel layer..
International Business Machines Corporation


05/26/16
20160149019 
new patent

Semiconductor device and method


Vertical gate all around devices are formed by initially forming a first doped region and a second doped region that are planar with each other. A channel layer is formed over the first doped region and the second doped region, and a third doped region is formed over the channel layer.
Taiwan Semiconductor Manufacturing Company, Ltd.


05/26/16
20160149014 
new patent

Semiconductor device and fabrication method thereof


A semiconductor device and a method for fabricating the same are disclosed. In the method, a substrate structure is provided, including a substrate and a fin-shaped buffer layer formed on the surface of the substrate.
Semiconductor Manufacturing International (shanghai) Corporation


05/26/16
20160149012 
new patent

Very high aspect ratio contact


A semiconductor device with a very high aspect ratio contact has a deep trench in the substrate. A dielectric liner is formed on sidewalls and a bottom of the deep trench.
Texas Instruments Incorporated


05/26/16
20160149011 
new patent

Poly sandwich for deep trench fill


A semiconductor device is formed by forming a deep trench in a substrate and a dielectric liner on sidewalls of the deep trench. A first undoped polysilicon layer is formed on the semiconductor device, extending into the deep trench on the dielectric liner, but not filling the deep trench.
Texas Instruments Incorporated


05/26/16
20160149010 
new patent

Vertical cell-type semiconductor device having protective pattern


According to example embodiments of inventive concepts, a semiconductor device includes: a substrate, and a stacked structure including interlayer insulating layers and gate electrodes alternately stacked on the substrate. The stacked structure defines a through-hole over the substrate.

05/26/16
20160149009 
new patent

Semiconductor device and manufacturing method thereof


A semiconductor device according to an embodiment includes a semiconductor substrate, and a gate dielectric film is provided on the semiconductor substrate. A first gate electrode is provided on the gate dielectric film.
Kabushiki Kaisha Toshiba


05/26/16
20160149006 
new patent

Semiconductor structures having a gate field plate and methods for forming such structure


A field effect transistor structure having a semiconductor having a source region, a drain region, and a gate contact region disposed between the source region and the drain region; and a gate electrode having a stem section extending from a top section of the gate electrode to, and in schottky contact with, the gate contact region. The stem section has an upper portion terminating at the top portion of the gate electrode and a bottom portion narrower than the upper portion, the bottom portion terminating at the gee contact region.
Raytheon Company


05/26/16
20160149005 
new patent

Semiconductor device and manufacturing same, crystal, and manufacturing same


A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice..
Flosfia Inc.


05/26/16
20160149004 
new patent

3d nand with oxide semiconductor channel


Disclosed herein are 3d nand memory devices having an oxide semiconductor vertical nand channel and methods for forming the same. The oxide semiconductor may have a crystalline structure.
Sandisk Technologies Inc.


05/26/16
20160149003 
new patent

Methods of manufacturing semiconductor devices


In methods of manufacturing a semiconductor device, a stress channel layer is formed on a semiconductor substrate. A first ion-implantation process is performed on the semiconductor substrate or the stress channel layer at a temperature ranging from about 100° c.
Samsung Electronics Co., Ltd.


05/26/16
20160149002 
new patent

Memory device containing stress-tunable control gate electrodes


A memory film and a semiconductor channel are formed within each memory opening that extends through a stack including an alternating plurality of insulator layers and sacrificial material layers. After formation of backside recesses through removal of the sacrificial material layers selective to the insulator layers, electrically conductive layers are formed in the backside recesses.
Sandisk Technologies Inc.


05/26/16
20160149001 
new patent

Graded heterojunction nanowire device


A device includes a source region, a drain region, and a semiconductor channel connecting the source region to the drain region. The semiconductor channel includes a source-side channel portion adjoining the source region, wherein the source-side channel portion has a first bandgap, and a drain-side channel portion adjoining the drain region.
Taiwan Semiconductor Manufacturing Company, Ltd.


05/26/16
20160149000 
new patent

Semiconductor wafer and producing semiconductor wafer


A semiconductor wafer includes first and second superlattice layers. The first superlattice layer includes first unit layers each of which includes first and second layers, the second superlattice layer includes second unit layers each of which includes third and fourth layers, the first layer is made of alx1ga1-x1n (0<x1≦1), the second layer is made of aly1ga1-y1n (0≦y1<1, x1>y1), the third layer is made of alx2ga1-x2n (0<x2≦1), the fourth layer is made of aly2ga1-y2n (0≦y2<1, x2>y2), an average lattice constant of the first superlattice layer is different from that of the second superlattice layer, and one or more layers selected from the first and second superlattice layers contain impurity atoms that improve a breakdown voltage and that have a concentration higher than 7×1018 [atoms/cm3]..
Sumitomo Chemical Company, Limited






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