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Duc patents



      
           
This page is updated frequently with new Duc-related patent applications. Subscribe to the Duc RSS feed to automatically get the update: related Duc RSS feeds. RSS updates for this page: Duc RSS RSS


Semiconductor device and manufacturing method of the same

Semiconductor device and manufacturing method of the same

High density field effect transistor design including a broken gate line

International Business Machines

High density field effect transistor design including a broken gate line

High density field effect transistor design including a broken gate line

Livermore Software Technology

Smoothed particle galerkin formulation for simulating physical behaviors in solids mechanics

Date/App# patent app List of recent Duc-related patents
04/23/15
20150113660
 Information processing apparatus and method, program, and information processing system patent thumbnailnew patent Information processing apparatus and method, program, and information processing system
There is provided an information processing apparatus, including a storage section which stores a first image, which is an image of a format requiring license information in reproduction, to which reproduction is performed by a reproduction apparatus after being acquired, a conversion section which converts the first image into a second image of a format not requiring license information in reproduction, which is an image with content the same as content of the first image, and a distribution section which distributes the second image to the reproduction apparatus to be reproduced, during acquisition of the first image.. .
Sony Corporation
04/23/15
20150113494
 Automated residual material detection patent thumbnailnew patent Automated residual material detection
Methods, systems, and structures for detecting residual material on semiconductor wafers are provided. A method includes scanning a test structure including topographic features on a surface of a semiconductor wafer.
International Business Machines Corporation
04/23/15
20150113493
 Method, system and computer program product for generating layout for semiconductor device patent thumbnailnew patent Method, system and computer program product for generating layout for semiconductor device
A method is performed at least in part by at least one processor. In the method, a plurality of circuit elements are placed in a layout for a semiconductor device, the plurality of circuit elements having a plurality of pins.
Taiwan Semiconductor Manufacturing Company, Ltd.
04/23/15
20150113350
 Selective test pattern processor patent thumbnailnew patent Selective test pattern processor
A method, system, and computer program product to test a semiconductor device are described. The system includes an input interface to receive a set of test patterns to test the semiconductor device and a user selection corresponding to a subset of the set of test patterns.
International Business Machines Corporation
04/23/15
20150113349
 Selective test pattern processor patent thumbnailnew patent Selective test pattern processor
A method, system, and computer program product to test a semiconductor device are described. The method includes receiving a set of test patterns for testing the semiconductor device and a user selecting a subset of the set of test patterns.
International Business Machines Corporation
04/23/15
20150113343
 Semiconductor device, test structure of the semiconductor device, and  testing the semiconductor device patent thumbnailnew patent Semiconductor device, test structure of the semiconductor device, and testing the semiconductor device
A semiconductor device, a test structure of the semiconductor device, and a method of testing the semiconductor device are provided. The test structure including a first pad and a second pad being separated from each other, and a first test element and a second test element connected between the first pad and the second pad, a first value of a characteristic parameter of the first test element being different from a second value of the characteristic parameter of the second test element, may be provided..
04/23/15
20150113322
 Data storing system and operating method thereof patent thumbnailnew patent Data storing system and operating method thereof
A data storing system includes a semiconductor device suitable for repeatedly performing a read operation by changing a level of a read voltage according to read voltages listed on a read retry table when a read operation on a selected page is passed, in response to a command and an address, and a controller suitable for controlling the read operation of the semiconductor device by generating the command and the address, wherein a read voltage to be used for performing the read operation is determined among the read voltages listed on the read retry table when the semiconductor device performs the read operation based on data read as a result of a predetermined number of read operations.. .
Sk Hynix Inc.
04/23/15
20150113303
 Semiconductor device predictive dynamic thermal management patent thumbnailnew patent Semiconductor device predictive dynamic thermal management
A semiconductor device includes a memory storing a lookup table including stored values associated with modes of operation of a component of the semiconductor device. A monitor monitors an operating parameter of the component in real-time, and reports a calculated value associated with the same.
Broadcom Corporation
04/23/15
20150112660
 Semiconductor sensor reliability patent thumbnailnew patent Semiconductor sensor reliability
Embodiments of the present invention provide a semiconductor sensor reliability system and method. Specifically, the present invention provides in-situ positioning of a reliability sensor (hereinafter sensors) within each functional block, as well as at critical locations, of a semiconductor system.
Ip Cube Partners Co., Ltd.
04/23/15
20150112653
 Smoothed particle galerkin formulation for simulating physical behaviors in solids mechanics patent thumbnailnew patent Smoothed particle galerkin formulation for simulating physical behaviors in solids mechanics
Methods and systems for conducting numerical simulation of structural behaviors in solid mechanics using smoothed particle galerkin formulation are disclosed. A meshfree model representing a physical domain defined by a plurality of particles is received in a computer system.
Livermore Software Technology Corporation
04/23/15
20150112631
new patent

Filament temperature derivation in hotwire semiconductor process


The present disclosure provides apparatus and methods for monitoring and controlling filaments used in hotwire semiconductor processing and for monitoring integrity of filaments in a hotwire processing chamber. Embodiments of this disclosure may use real time voltage and current feedback signals provided by the power supply, known attributes, for example resistivity, of filament, filament geometries, for example diameter and length, and filament assembly configurations as input, to derive filament temperature in real time.
Applied Materials, Inc.
04/23/15
20150112624
new patent

Metrology through use of feed forward feed sideways and measurement cell re-use


Metrology may be implemented during semiconductor device fabrication by a) modeling a first measurement on a first test cell formed in a layer of a partially fabricated device; b) performing a second measurement on a second test cell in the layer; c) feeding information from the second measurement into the modeling of the first measurement; and after a lithography pattern has been formed on the layer including the first and second test cells, d) modeling a third and a fourth measurement on the first and second test cells respectively using information from a) and b) respectively.. .
Kla-tencor Corporation
04/23/15
20150112542
new patent

Transportation event recorder for vehicle


A device includes a non-transitory computer readable data storage media, a connector configured to receive vehicle data from a vehicle, a sensor module configured to receive dynamic motion data from a motion sensor mounted within the vehicle, and a processor. The processor is configured to record, on the transitory computer readable data storage media during operation of the vehicle, vehicle data received via the connector and motion sensor data received from the motion sensor in combination with chronological information that facilitates a combined chronological reproduction of the vehicle data and the motion sensor data..
Xrs Corporation
04/23/15
20150112535
new patent

Electric vehicle


An electric vehicle includes: a synchronous motor; an induction motor; and a control unit configured to adjust a torque from the synchronous motor and a torque from the induction motor, wherein the control unit includes a torque varying device configured to reduce an output torque from the synchronous motor while maintaining a total drive force of the electric vehicle, and increasing an output torque from the induction motor in the case where the electric vehicle is stopped in a state in which a torque is output from the synchronous motor. Accordingly, there is provided an electric vehicle capable of restraining deterioration of drivability and performing thermal protection of a motor and a control unit..
Toyota Jidosha Kabushiki Kaisha
04/23/15
20150112451
new patent

Ultrasound system for real-time tracking of multiple, in-vivo structures


An ultrasound tracking system for tracking shallow structures by acquiring and processing a sequence of images is provided. The system comprises a transducer, a beamformer, and computational processing hardware, wherein the transducer has a plurality of sub-arrays with a gap between adjacent sub-arrays, the sub-arrays in generally parallel relation to one another, the sub-arrays comprising at least 12 elements, the beamformer in electronic communication with the sub-arrays, and the computational processing hardware comprising instructions for transforming signals from the sub-arrays into a plurality of data sets.
04/23/15
20150112289
new patent

Wearable external ventricular drain system


A wearable evd system having a ventricular catheter and transducer supported proximately to a patient's ear by a mount, such as supporting headband or ear clip. An adjustable orifice valve or a spring-loaded needle valve is used to control the amount of csf that drains into a drip chamber suspended on the patient for periodic measurement and emptying into a similarly located drainage bag, thereby avoiding the need for an iv pole and allowing the patient more mobility without disrupting drainage of csf..
Infinivation Biomedical, Llc
04/23/15
20150112277
new patent

Welded housing components of a drug delivery device


The present invention relates to a drug delivery device for dispensing a dose of a medicament, comprising: a first housing component, and a second housing component welded with the first housing component by means of at least one induction heatable component.. .
Sanofi-aventis Deutschland Gmbh
04/23/15
20150112234
new patent

Devices, systems, and methods for the selective positioning of an intravascular ultrasound neuromodulation device


Devices, systems, and methods for the selective positioning of an intravascular ultrasound neuromodulation device are disclosed herein. One aspect of the present technology is directed to positioning systems for focused ultrasound devices.
Medtronic Ardian Luxembourg S.a.r.i
04/23/15
20150112233
new patent

Apparatus, neurostimulation by high frequency ultrasound


An apparatus, system, and method for neurostimulation by high frequency ultrasound. In one embodiment, an apparatus includes a pulse generator, an ultrasound transducer coupled to the pulse generator, and an implantable stimulator.
Arizona Board Of Regents On Behalf Of Arizona State University
04/23/15
20150112212
new patent

Transducer interface system and method


A transducer interface system/method allowing conversion from an analog sensor input to a standardized analog output interface is disclosed. In some preferred embodiments the system/method permits a fiber optic pressure sensor to be interfaced to a standard patient care monitor (pcm) system using standardized wheatstone bridge analog interface inputs.
Endophys Holdings, Llc
04/23/15
20150112211
new patent

Transducer interface system and method


A transducer interface system/method allowing conversion from an analog sensor input to a standardized analog output interface is disclosed. In some preferred embodiments the system/method permits a fiber optic pressure sensor to be interfaced to a standard patient care monitor (pcm) system using standardized wheatstone bridge analog interface inputs.
Endophys Holdings, Llc
04/23/15
20150112210
new patent

Lumen based pressure measurement guide wire system for measuring pressure in a body lumen


A medical system utilizes a guide wire with a fluid filled internal lumen and a pressure measurement system to measure blood pressure in a body vessel. The guide wire includes an internal lumen with a distal opening for admitting fluid flow.
Abbott Cardiovascular Systems Inc.
04/23/15
20150112199
new patent

Biological testing device


An ultrasonic probe includes an ultrasonic transducer, a liquid filled section filled with a liquid, a contact section, and a flexible section. The contact section includes a deformable resin material, is positioned outside the ultrasonic transducer, and forms a portion of the liquid filled section.
Seiko Epson Corporation
04/23/15
20150112181
new patent

Wideband ultrasonic probe for photoacoustic image and ultrasound image


Provided are a wideband ultrasonic probe for a photoacoustic image and an ultrasound image. The wideband ultrasonic probe includes a first ultrasonic transducer array and a second ultrasonic transducer array that are disposed on a substrate; and a laser apparatus that comprises a laser irradiator configured to irradiate a laser light onto a diagnosis object, wherein the first ultrasonic transducer array receives a first ultrasonic wave which is generated from the diagnosis object on which the laser light is irradiated, and the second ultrasonic transducer array transmits a high frequency bandwidth ultrasonic wave toward the diagnosis object and receives a second ultrasonic wave that is reflected by the diagnosis object..
Samsung Electronics Co., Ltd.
04/23/15
20150112166
new patent

In vivo technology system for human gut research, diagnostics and treatment


A comprehensive system for gut in vivo exploration, discovery, characterization, research, diagnostics, and treatment comprising three different ingestible capsules and their associated methodologies, is provided for medical research and patient care. The system of tools is focused on discovery of causes of gut-based illnesses, treating, and curing them.
04/23/15
20150112081
new patent

Naphthobisthiadiazole derivative


A naphthobisthiadiazole derivative is represented by formula 1. In formula 1, z is selected from a hydrogen atom, a boronic acid group, a boronic acid ester group, a trifluoroborate salt group and a triolborate salt group, and at least one z is a boronic acid group, a boronic acid ester group, a trifluoroborate salt group or a triolborate salt group.
Sankyo Kasei Co., Ltd.
04/23/15
20150112052
new patent

Sequence-determined dna fragments with regulatory functions


The present invention provides dna molecules that constitute fragments of the genome of a plant, and polypeptides encoded thereby. The dna molecules are useful for specifying a gene product in cells, either as a promoter or as a protein coding sequence or as an utr or as a 3′ termination sequence, and are also useful in controlling the behavior of a gene in the chromosome, in controlling the expression of a gene or as tools for genetic mapping, recognizing or isolating identical or related dna fragments, or identification of a particular individual organism, or for clustering of a group of organisms with a common trait..
Ceres, Inc.
04/23/15
20150111975
new patent

Catalyst for methanol production, producing the same and process of methanol production


[solution] the catalyst comprises copper, zinc, aluminum and silicon, and has a molar ratio of zinc to copper of 0.5 to 0.7, a molar ratio of silicon to copper of 0.015 to 0.05, a maximum intensity ratio of a peak derived from zinc to a peak derived from copper of not more than 0.25 and a half-value width (2θ) of the peak derived from copper of 0.75 to 2.5. The process for producing methanol comprises using the catalyst..
04/23/15
20150111948
new patent

Rna-interference-inducing nucleic acid molecule able to penetrate into cells, and use therefor


The present invention relates to a novel, rnai-inducing nucleic acid molecule having cell penetrating ability and the use thereof, and more particularly, to a novel, rnai-inducing double-stranded nucleic acid molecule, which has a replacement of the phosphate backbone of at least one nucleotide with phosphorothioate or phosphorodithioate, and has a lipophilic compound conjugated thereto, and thus has high target gene-silencing efficiency while having the ability to penetrate cells without needing a separate intracellular delivery vehicle, and to a method of silencing a target gene using the nucleic acid molecule. The nucleic acid structure according to the present invention has both cholesterol modification and phosphorothioate modification introduced therein, and thus has high gene silencing efficiency while having the ability to penetrate cells without needing a separate intracellular delivery vehicle.
Bmt, Inc.
04/23/15
20150111825
new patent

Osteocalcin as a treatment for male reproductive disorders


Methods and compositions for treating, preventing, or diagnosing disorders related to reproduction in male mammals, preferably humans, are provided. The methods generally involve modulation of the ost-ptp signaling pathway or the ptp-1b signaling pathway involving gamma-carboxylase and osteocalcin.
The Trustees Of Columbia University In The City Of New York
04/23/15
20150111804
new patent

Cleaning formulations for removing residues on surfaces


This disclosure relates to a cleaning composition that contains 1) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one monocarboxylic acid containing a primary or secondary amino group and at least one additional basic group containing nitrogen; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate..
Fujifilm Electronic Materials U.s.a., Inc.
04/23/15
20150111765
new patent

Biocoated piezoelectric biosensor platform for point-of-care diagnostic use


Biosensor components (chips) are described based on direct biocoating processes that result in the tenacious and stable, noncovalent (believed to be chemisorptive) binding of anchor substances such as avidin(s) other proteins having specific binding partners or oligo- or poly-nucleotides onto any piezo-electrically active crystal surface. The resulting platform technology can be developed for a variety of biosensors with specific applications in biological assays.
Aviana Molecular Technologies, Llc.
04/23/15
20150111754
new patent

Universal adiabatic quantum computing with superconducting qubits


A quantum processor is operable as a universal adiabatic quantum computing system. The quantum processor includes physical qubits, with at least a first and second communicative coupling available between pairs of qubits via an in-situ tunable superconducting capacitive coupler and an in-situ tunable superconducting inductive coupler, respectively.
D-wave Systems Inc.
04/23/15
20150111753
new patent

Superconducting magnet apparatus


A superconducting magnet apparatus is provided, which comprises a superconducting coil, an induction coil to be in inductive coupling with the superconducting coil, a first refrigerant vessel charged with a first refrigerant in which the superconducting coil is installed; and a second refrigerant vessel charged with a second refrigerant having a melting temperature higher than or a boiling temperature higher than a boiling temperature of the first refrigerant, the second refrigerant vessel in which the induction coil is installed, wherein the second refrigerant vessel is thermally isolated from the first refrigerant vessel.. .
Hitachi, Ltd.
04/23/15
20150111537
new patent

Determining a user based on features


A signal may be emitted by an emitter or transducer. The signal may be sensed by a sensor, such as an accelerometer.
04/23/15
20150111396
new patent

Low-k dielectric damage repair by vapor-phase chemical exposure


A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (uv) cure process..
Applied Materials, Inc.
04/23/15
20150111395
new patent

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium


According to the present disclosure, a film containing a predetermined element, carbon and nitrogen is formed with high controllability of a composition thereof. A method of manufacturing a semiconductor device includes forming a film containing a predetermined element, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times.
Hitachi Kokusai Electric Inc.
04/23/15
20150111394
new patent

Mechanisms for forming uniform film on semiconductor substrate


Embodiments of mechanisms for forming a film deposition tool are provided. The film deposition tool includes a plasma source and a substrate processing region connected to the plasma source.
Taiwan Semiconductor Manufacturing Co., Ltd.
04/23/15
20150111393
new patent

Manufacturing semiconductor device and lithography template


In the manufacturing method of a semiconductor device according to the present embodiment, a resist is supplied on a base material. A template including a first template region having a device pattern and a second template region being adjacent to the device pattern and having supporting column patterns is pressed against the resist on the base material.
Kabushiki Kaisha Toshiba
04/23/15
20150111389
new patent

Methods of surface interface engineering


Methods for surface interface engineering in semiconductor fabrication are provided herein. In some embodiments, a method of processing a substrate disposed atop a substrate support in a processing volume of a processing chamber includes: generating an ion species from an inductively coupled plasma formed within the processing volume of the processing chamber from a first process gas; exposing a first layer of the substrate to the ion species to form an ammonium fluoride (nh4f) film atop the first layer, wherein the first layer comprises silicon oxide; and heating the substrate to a second temperature at which the ammonium fluoride film reacts with the first layer to selectively etch the silicon oxide..
Applied Materials, Inc.
04/23/15
20150111385
new patent

Method of forming trench in semiconductor substrate


The present invention provides a method of forming a trench in a semiconductor substrate. First, a first patterned mask layer is formed on a semiconductor substrate.
United Microelectronics Corp.
04/23/15
20150111382
new patent

Polishing composition to be used to polish semiconductor substrate having silicon through electrode structure, and polishing method using polishing composition


Provided is a polishing composition used for polishing a semiconductor substrate having a through-silicon via structure, comprising an oxidizing agent having a standard electrode potential of 350 mv or more and 740 mv or less, a silicon polishing accelerating agent, a through-silicon via material polishing speed increasing agent, a silicon contamination preventing agent, and water.. .
Fujimi Incorporated
04/23/15
20150111381
new patent

Method of fabricating semiconductor device and computing system for implementing the method


Provided are method of fabricating semiconductor device and computing system for implementing the method. The method of fabricating a semiconductor device includes forming a target layer, forming a first mask on the target layer to expose a first region, subsequently forming a second mask on the target layer to expose a second region separated from the first region in a first direction, subsequently forming a third mask in the exposed first region to divide the first region into a first sub region and a second sub region separated from each other in a second direction intersecting the first direction, and etching the target layer using the first through third masks such that the first and second sub regions and the second region are defined in the target layer..
04/23/15
20150111380
new patent

Self-aligned double patterning


A system and method for a semiconductor device are provided. An embodiment comprises a dielectric layer and masking layers over the dielectric layer.
Taiwan Semiconductor Manufacturing Company, Ltd.
04/23/15
20150111379
new patent

Photolithographic, thickness non-uniformity, compensation features for optical photolithographic semiconductor structure formation


A semiconductor structure having a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts; and a photolithographic, thickness non-uniformity, compensation feature, disposed on the surface substrate off of the active semiconductor region. In one embodiment the feature comprises pads on the surface of the substrate and off of the active semiconductor region..
Raytheon Company
04/23/15
20150111378
new patent

Method of manufacturing semiconductor device and substrate processing apparatus


There is provided a method of manufacturing a semiconductor device, the method including: forming an amorphous metal film on a substrate while maintaining the substrate at a first temperature by performing, in a time-divisional manner, supplying in the time-divisional manner a metal-containing gas and a first reducing gas to the substrate a predetermined number of times to form a first amorphous metal film on the substrate; and simultaneously supplying the metal-containing gas and a second reducing gas to the substrate having the first amorphous metal film formed thereon to form a second amorphous metal film on the first amorphous metal film; and heating the substrate having the amorphous metal film formed thereon to a second temperature higher than the first temperature.. .
04/23/15
20150111377
new patent

Memory process


A memory process is described. A substrate is provided, having therein trenches and conductive lines buried in the trenches and having thereon an array area, wherein each of the conductive lines has an array portion in the array area.
Nanya Technology Corporation
04/23/15
20150111374
new patent

Surface treatment in a dep-etch-dep process


Embodiments of present invention provide a method of forming semiconductor devices. The method includes creating an opening in a semiconductor structure; depositing a first layer of metal inside the opening with the first layer of metal partially filling up the opening; modifying a top surface of the first layer of metal in an etching process; passivating the modified top surface of the first layer of metal to form a passivation layer; and depositing a second layer of metal directly on top of the passivation layer..
International Business Machines Corporation
04/23/15
20150111372
new patent

Phosphorus and arsenic doping of semiconductor materials


Provided are methods for preparing a doped silicon material. The methods include contacting a surface of a silicon material with a dopant solution comprising a dopant-containing compound selected from a phosphorus-containing compound and an arsenic-containing compound, to form a layer of dopant material on the surface; and diffusing the dopant into the silicon material, thereby forming the doped silicon material, wherein the doped silicon material has a sheet resistance (rs) of less than or equal to 2,000 Ω/sq..
Sematech, Inc.
04/23/15
20150111369
new patent

Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and manufacturing the semiconductor device using the semiconductor buffer structure


A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer..
04/23/15
20150111368
new patent

Fabrication silicon carbide semiconductor element


A (000-1) c-plane of an n− type silicon carbide substrate having an off-angle θ in a <11-20> direction is defined as a principal plane, and a periphery of a portion of this principal surface layer defined as an alignment mark is selectively removed to leave the convex-shaped alignment mark. The alignment mark has a cross-like plane shape such that two rectangles having longitudinal dimensions tilted by 45 degrees relative to the <11-20> direction are orthogonal to each other.
Fuji Electric Co., Ltd.
04/23/15
20150111367
new patent

High density field effect transistor design including a broken gate line


A design layout includes a set of active region-level design shapes representing semiconductor active regions, and a set of gate-level design shapes representing gate lines straddling the semiconductor active regions. The set of gate-level design shapes include a sub-resolution assist feature (sraf) that connects two gate-level design shapes, and is physically manifested as a gap between two gate lines upon printing employing lithographic methods.
International Business Machines Corporation
04/23/15
20150111364
new patent

Maskless hybrid laser scribing and plasma etching wafer dicing process


Maskless hybrid laser scribing and plasma etching wafer dicing processes are described. In an example, a method of dicing a semiconductor wafer having a front surface with a plurality of integrated circuits thereon and having a passivation layer disposed between and covering metal pillar/solder bump pairs of the integrated circuits involves laser scribing, without the use of a mask layer, the passivation layer to provide scribe lines exposing the semiconductor wafer.
04/23/15
20150111363
new patent

Maskless hybrid laser scribing and plasma etching wafer dicing process


Maskless hybrid laser scribing and plasma etching wafer dicing processes are described. In an example, a method of dicing a semiconductor wafer having a front surface with a plurality of integrated circuits thereon and having a passivation layer disposed between and covering metal pillar/solder bump pairs of the integrated circuits involves laser scribing, without the use of a mask layer, the passivation layer to provide scribe lines exposing the semiconductor wafer.
04/23/15
20150111361
new patent

Integrated circuit resistor


A method of fabricating a semiconductor device is disclosed. The method includes providing a substrate including an isolation region, forming a resistor over the isolation region, and forming a contact over the resistor.
Taiwan Semiconductor Manufacturing Company, Ltd.
04/23/15
20150111360
new patent

Method of manufacturing a semiconductor device


A method of manufacturing a semiconductor device includes forming a first conductive layer on a substrate, partially removing the first conductive layer and an upper portion of the substrate to form a recess, forming a second conductive layer pattern to fill the recess, forming a third conductive layer on the second conductive layer pattern and the first conductive layer, and patterning the third conductive layer and the second conductive layer pattern to form a bit line structure and a bit line contact, respectively.. .
Samsung Electronics Co., Ltd.
04/23/15
20150111359
new patent

Source/drain junction formation


An embodiment method of forming a source/drain region for a transistor includes forming a recess in a substrate, epitaxially growing a semiconductor material in the recess, amorphizing the semiconductor material, and doping the semiconductor material to form a source/drain region. In an embodiment, the doping utilizes either phosphorus or boron as the dopant.
Taiwan Semiconductor Manufacturing Company, Ltd.
04/23/15
20150111357
new patent

Manufacturing semiconductor device


First and second stacked structures in a memory cell formation region are formed so as to have a larger height than a third stacked structure in a transistor formation region, and then an interlayer insulating layer is formed so as to cover these stacked structures and then polished.. .
04/23/15
20150111356
new patent

Mos device with isolated drain and fabricating the same


A method for fabricating a metal-oxide-semiconductor (mos) device with isolated drain. The method performing operations of: forming a first well region embedded in a portion of a semiconductor substrate; forming a first patterned mask layer over the semiconductor substrate, exposing portions of the semiconductor substrate; performing a first ion implant process on the portions of the semiconductor substrate exposed by the first patterned mask layer; performing a second ion implant process to a second well region exposed, forming a fourth well region between the first well region and the second well region; performing a third implant process to the second well region, forming a fifth well region overlying the fourth well region; forming a source region in a portion of the third well region; and forming a drain region in a portion of the fifth well region..
Media Tek Inc
04/23/15
20150111355
new patent

Finfets with different fin heights


An integrated circuit structure includes a semiconductor substrate including a first portion in a first device region, and a second portion in a second device region. A first semiconductor fin is over the semiconductor substrate and has a first fin height.
Taiwan Semiconductor Manufacturing Company, Ltd.
04/23/15
20150111354
new patent

Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates, and methods of manufacturing the devices


Superjunction semiconductor devices having narrow surface layout of terminal structures and methods of manufacturing the devices are provided. The narrow surface layout of terminal structures is achieved, in part, by connecting a source electrode to a body contact region within a semiconductor substrate at a body contact interface comprising at least a first side of the body contact region other than a portion of a first main surface of the semiconductor substrate..
Icemos Technology Ltd.
04/23/15
20150111353
new patent

Semiconductor device and the manufacturing the same


The semiconductor device according to the invention and the method of manufacturing the semiconductor device according to the invention facilitate lowering the on-state voltage, preventing the breakdown voltage from lowering, lowering the gate capacitance, and reducing the manufacturing costs.. .
04/23/15
20150111352
new patent

Semiconductor device and manufacturing the same


A semiconductor device includes word lines and interlayer insulating layers alternately stacked over a substrate, vertical channel layers protruding from the substrate and passing through the word lines and the interlayer insulating layers, a tunnel insulating layer surrounding each of the vertical channel layers, a charge trap layer surrounding the tunnel insulating layer, wherein first regions of the charge trap layer between the tunnel insulating layer and the word lines have a thickness smaller than a thickness of second regions thereof between the tunnel insulating layer and the interlayer insulating layers, and first charge blocking layer patterns surrounding the first regions of the charge trap layer.. .
Sk Hynix Inc.
04/23/15
20150111349
new patent

Semiconductor structure including a semiconductor-on-insulator region and a bulk region, and the formation thereof


A structure comprises a semiconductor substrate, a semiconductor-on-insulator region and a bulk region. The semiconductor-on-insulator region comprises a first semiconductor region, a dielectric layer provided between the semiconductor substrate and the first semiconductor region, and a first transistor comprising an active region provided in the first semiconductor region.
Globalfoundries Inc.
04/23/15
20150111348
new patent

Semiconductor device and manufacturing the same


A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the soi substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed.
04/23/15
20150111347
new patent

Electronic device structure with a semiconductor ledge layer for surface passivation


Electronic device structures including semiconductor ledge layers for surface passivation and methods of manufacturing the same are disclosed. In one embodiment, the electronic device includes a number of semiconductor layers of a desired semiconductor material having alternating doping types.
Cree, Inc.
04/23/15
20150111346
new patent

Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packages


A semiconductor chip including through silicon vias (tsvs), wherein the tsvs may be prevented from bending and the method of fabricating the semiconductor chip may be simplified, and a method of fabricating the semiconductor chip. The semiconductor chip includes a silicon substrate having a first surface and a second surface; a plurality of tsvs which penetrate the silicon substrate and protrude above the second surface of the silicon substrate; a polymer pattern layer which is formed on the second surface of the silicon substrate, surrounds side surfaces of the protruding portion of each of the tsvs, and comprises a flat first portion and a second portion protruding above the first portion; and a plated pad which is formed on the polymer pattern layer and covers a portion of each of the tsvs exposed from the polymer pattern layer..
Samsung Electronics Co., Ltd.
04/23/15
20150111345
new patent

Etch-back type semiconductor package, substrate and manufacturing method thereof


A semiconductor package, a substrate and a manufacturing method thereof are provided. The substrate comprises a conductive carrier, a first metal layer and a second metal layer.
Advanpack Solutions Pte Ltd.
04/23/15
20150111344
new patent

Method of fabricating a circuit


Methods of fabricating integrated circuits are disclosed herein. In one embodiment of a method.
Texas Instruments Incorporated
04/23/15
20150111343
new patent

Electronic component


An electronic component includes an electrically conductive carrier. The electrically conductive carrier includes a carrier surface and a semiconductor chip includes a chip surface.
Infineon Technologies Ag
04/23/15
20150111340
new patent

Method for forming wiring, semiconductor device, and manufacturing semiconductor device


A wiring which is formed using a conductive film containing copper and whose shape is controlled is provided. A transistor including an electrode which is formed in the same layer as the wiring is provided.
Semiconductor Energy Laboratory Co., Ltd.
04/23/15
20150111338
new patent

Method for manufacturing thin-film transistor


The present invention provides a method for manufacturing a thin-film transistor. The thin-film transistor has a bottom gate coplanar structure.
Shenzhen China Star Optoelectronics Technology Co. Ltd.
04/23/15
20150111337
new patent

Phenanthro[9,10-b]furan polymers and small molecules for electronic applications


Phenanthro[9,10-b]furan polymers and small molecules for electronic applications. The present invention relates to polymers comprising a repeating unit of the formula (i), (ii), (viii), (ix) and compounds of formula (viii), or (ix), wherein y, y15, y16 and y17 are independently of each other a group of formula (i), or (ii), and their use as organic semiconductor in organic electronic devices, especially in organic photovoltaics and photodiodes, or in a device containing a diode and/or an organic field effect transistor.
Basf Se
04/23/15
20150111327
new patent

Method for forming semiconductor device package with slanting structures


A method for forming semiconductor device package comprises providing a substrate with via contact pads and via through holes through said substrate, terminal pads on a bottom surface of said substrate and an exposed type through hole through said substrate. A die is provided with bonding pads thereon and an exposed type pad on a bottom surface of said die.
King Dragon International Inc.
04/23/15
20150111325
new patent

Gallium and nitrogen containing laser device having confinement region


In an example, the present invention provides a method for fabricating a laser diode device. The method includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material.
Soraa Laser Diode, Inc.
04/23/15
20150111322
new patent

Manufacturing light-emitting structure


A manufacturing method of a light-emitting structure is provided. The manufacturing method comprises the following steps.
Lextar Electronics Corporation
04/23/15
20150111320
new patent

Integrated circuit combination of a target integrated circuit and a plurality of photovoltaic cells connected thereto using the top conductive layer


A device having a plurality of thin film photovoltaic cells (pv) formed over a passivation layer. The device comprises a plurality of thin film photovoltaic (pv) cells formed over the passivation layer, each pv cell includes at least a lower conducting layer (lcl) and an upper conducting layer (ucl); and a conducting path connecting at least a ucl of a first pv cell to at least a lcl of a second pv cell, wherein at least a first array of pv cells comprised of at least a first portion of the plurality of pv cells is connected by the respective ucl and lcl of each pv cell to provide a first voltage output.
Sol Chip, Ltd.
04/23/15
20150111318
new patent

Heterogeneous integration of memory and split-architecture processor


A method for fabricating a semiconductor device provides a first chip having first terminals, a second chip having second terminals, and a third chip having third terminals. A first silicon interposer having first through silicon vias tsvs and a second silicon interposer having second tsvs is provided.
Texas Instruments Incorporated
04/23/15
20150111317
new patent

Method of manufacturing semiconductor device


Provided is a method of manufacturing a semiconductor device including a step of testing every one of through-electrodes. A second probe test is conducted to check an electrical coupling state between a plurality of copper post bumps formed on the side of the surface of a wafer and electrically coupled to a metal layer and a plurality of bumps formed on the side of the back surface of the wafer and electrically coupled to the metal layer (also another metal layer) via a plurality of through-electrodes by probing to each of the bumps on the side of the back surface while short-circuiting between the copper post bumps (electrodes).
Renesas Electronics Corporation
04/23/15
20150111316
new patent

Method for detecting defects in a diffusion barrier layer


A method of providing a semiconductor structure comprising a diffusion barrier layer and a seed layer, the seed layer comprising an alloy of copper and a metal other than copper, depositing an electrically conductive material on the seed layer, performing an annealing process, wherein at least a first portion of the metal other than copper diffuses away from a vicinity of the diffusion barrier layer through the electrically conductive material, and wherein, in case of a defect in the diffusion barrier layer, a second portion of the metal other than copper indicative of the defect remains in a vicinity of the defect, measuring a distribution of the metal other than copper in at least a portion of the semiconductor structure, and determining, from the measured distribution of the metal other than copper, if the second portion of the metal other than copper is present.. .
Globalfoundries Inc.
04/23/15
20150111314
new patent

A polishing a substrate having a film on a surface of the substrate for semiconductor manufacturing


A method of polishing a substrate having a film is provided. The method includes: performing polishing of the substrate in a polishing section; transporting the polished substrate to a wet-type film thickness measuring device prior to cleaning and drying of the substrate; measuring a thickness of the film by the wet-type film thickness measuring device; comparing the thickness with a predetermined target value; and if the thickness has not reached the predetermined target value, performing re-polishing of the substrate in the polishing section prior to cleaning and drying of the substrate..
Ebara Corporation
04/23/15
20150111310
new patent

Semiconductor device and manufacturing the same


A lower electrode film, a ferroelectric film, and an upper electrode film are formed on an insulation film covering a transistor formed on a semiconductor substrate. Furthermore, a pt film is formed as a cap layer on the upper electrode film.
Fujitsu Semiconductor Limited
04/23/15
20150111309
new patent

Method for fabricating semiconductor device


In a method for fabricating a semiconductor device, a conductive layer is formed on a substrate, where the substrate has a bottom layer formed thereon. A magnetic tunnel junction layer is formed on the conductive layer.
Sk Hynix Inc.
04/23/15
20150111281
new patent

Production of porphyrin-containing polypeptides in the presence of formate


The present compositions and methods relate to the production of polypeptides in submerged culture, and specifically the large-scale production of porphyrin-containing polypeptides, e.g. Catalase, by microbial fermentation in the presence of formate..
Danisco Us Inc.
04/23/15
20150111253
new patent

Enzymatic omega-oxidation and omega-amination of fatty acids


The invention relates to a method for oxidizing a fatty acid or an ester thereof of formula (i) h3c—(ch2)n-coor, wherein r is selected from the group that comprises h, methyl, ethyl, propyl, and butyl, wherein n is 0 to 30, preferably 6 to 24, comprising the step of oxidizing the fatty acid or the ester thereof by contacting the fatty acid or the ester thereof with a cytochrome p450 monooxygenase of the cyp153 family in the presence of molecular oxygen and nad(p)h and a whole-cell catalyst that expresses a recombinant cytochrome p450 monooxygenase of the cyp153 family, a recombinant alcohol dehydrogenase, a recombinant transaminase, and optionally one or more than one recombinant enzyme from the group comprising alanine dehydrogenase, ferredoxin, and ferredoxin reductase, and the use of said whole-cell catalyst to oxidize a fatty acid or an ester thereof.. .
Evonik Industries Ag
04/23/15
20150111191
new patent

Method, system, and computer-readable recording medium for providing education service based on knowledge units


A method for providing education service based on knowledge units includes generating a curriculum based on a user's achievement for at least one knowledge unit when the curriculum includes at least one problem composed based on the at least one knowledge unit, and providing the at least one problem to the user.. .
Knowre Korea Inc.
04/23/15
20150111190
new patent

Educational content search and results


A search request for educational content can be initiated by a user, and the educational content that is relevant to the search request can be identified. The identified educational content can be ranked based on the number of times the content has been referenced as well as the university or other educational institution that referenced the educational content.
04/23/15
20150111169
new patent

Dental ultrasonic cleaning device and cleaning teeth or dentures by using ultrasonic waves


Provided is a dental ultrasonic cleaning device that efficiently cleans teeth or dentures in an oral cavity using ultrasonic waves. A dental ultrasonic cleaning device 1 emits ultrasonic waves through a cleaning-liquid (w1) to the surface of a cleaning-target 26, ultrasonically cleaning it.
Showa University
04/23/15
20150111150
new patent

Tough wear resistant urethane hexaacrylate materials for overcoats


An overcoat layer for an organic photoconductor drum of an electrophotographic image forming device is provided. The overcoat layer is prepared from a curable composition including a urethane resin having at least six radical polymerizable functional groups.
Lexmark International, Inc.
04/23/15
20150111138
new patent

Tough wear resistant urethane hexaacrylate materials for overcoats


An overcoat layer for an organic photoconductor drum of an electrophotographic image forming device is provided. The overcoat layer is prepared from a curable composition including a urethane resin having at least six radical polymerizable functional groups.
Lexmark International, Inc.
04/23/15
20150111119
new patent

Semiconductor photoelectrode, photoelectrochemical cell, hydrogen generation method, and energy system


Provided is a semiconductor photoelectrode comprising a first conductive layer; a first n-type semiconductor layer disposed on the first conductive layer; and a second conductive layer covering the first n-type semiconductor layer. The first n-type semiconductor layer has a first n-type surface region and a second n-type surface region.
Panasonic Intellectual Property Management Co., Ltd.
04/23/15
20150111118
new patent

Photoelectrochemical cell and hydrogen generation method using the same


The present invention provides a photoelectrochemical cell. The photoelectrochemical cell comprises a semiconductor photoelectrode which functions as a cathode electrode; a counter electrode which functions as an anode electrode; an electrolyte aqueous solution which is in contact with surfaces of the semiconductor photoelectrode and the counter electrode; and a container containing the semiconductor photoelectrode, the counter electrode, and the electrolyte aqueous solution.
Panasonic Corporation
04/23/15
20150111100
new patent

Electrode active material of lithium ion battery and making the same


A method for making an electrode active material of a lithium ion battery is provided. A sulfur grafted poly(pyridinopyridine) is synthesized.
Tsinghua University
04/23/15
20150111067
new patent

Biological fuel cell and methods


A fuel cell has an anode and a cathode with anode enzyme disposed on the anode and cathode enzyme is disposed on the cathode. The anode is configured and arranged to electrooxidize an anode reductant in the presence of the anode enzyme.
Abbott Diabetes Care Inc.
04/23/15
20150111048
new patent

Transparent conductor and optical display including the same


A transparent conductor includes a base layer, and a conductive layer on an upper surface of the base layer. The conductive layer includes metal nanowires and a matrix.
Samsung Sdi Co., Ltd.
04/23/15
20150111021
new patent

Thermally conductive substrate article


A thermally conductive article including a polymeric layer comprising a nonwoven polymeric material. In particular, flexible thermally conductive polymeric layer comprising an epoxy resin and a long-strand polymeric nonwoven material embedded in the epoxy resin.
3m Innovative Properties Company


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