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Duc patents



      
           
This page is updated frequently with new Duc-related patent applications. Subscribe to the Duc RSS feed to automatically get the update: related Duc RSS feeds. RSS updates for this page: Duc RSS RSS


Device including interposer between semiconductor and substrate

Telefonaktiebolaget L M Ericsson (publ)

A printed circuit board arrangement and a method for forming electrical connection at a printed circuit board


Date/App# patent app List of recent Duc-related patents
07/23/15
20150208524 
 Semiconductor device patent thumbnailSemiconductor device
A connecting terminal includes an external terminal connecting portion, having an end surface to connect an external terminal thereto and located at a second principal surface side of a second circuit board faces, and a substrate-fixed portion which is securely connected to a first circuit board. A seal attachment portion is provided on a portion of the external terminal connecting portion including the end surface to attach thereto a seal member to seal a gap between the portion and the case.
Kabushiki Kaisha Toyota Jidoshokki


07/23/15
20150208517 
 Embedded trace substrate and  forming the same patent thumbnailEmbedded trace substrate and forming the same
In one embodiment, a method for forming an embedded trace substrate includes forming a conductive layer on a carrier. A dielectric film is provided on the conductive layer.
Amkor Technology, Inc.


07/23/15
20150208507 
 Device including interposer between semiconductor and substrate patent thumbnailDevice including interposer between semiconductor and substrate
A device including a semiconductor, a substrate, and an interposer. The interposer is attached between the semiconductor and the substrate to absorb stresses between the semiconductor and the substrate..
Hewlett-packard Development Company, L.p.


07/23/15
20150208506 
 A printed circuit board arrangement and a  forming electrical connection at a printed circuit board patent thumbnailA printed circuit board arrangement and a forming electrical connection at a printed circuit board
The present invention relates to a printed circuit board arrangement and a method for forming an electrical connection at a printed circuit board. The printed circuit board arrangement comprises a printed circuit board having an electrical connection electrically connecting a first conductive layer on a first side of the printed circuit board and a second conductive layer on a second side of the printed circuit board.
Telefonaktiebolaget L M Ericsson (publ)


07/23/15
20150208504 
 Test structure and  testing electrical characteristics of through vias patent thumbnailTest structure and testing electrical characteristics of through vias
A method and apparatus for testing the electrical characteristics, such as electrical continuity, is provided. A substrate, such as a wafer or an interposer, having a plurality of through vias (tvs) is provided.
Taiwan Semiconductor Manufacturing Company, Ltd.


07/23/15
20150208501 
 Wiring board and  manufacturing same patent thumbnailWiring board and manufacturing same
To provide a wiring board excellent in connection reliability with a semiconductor chip. A first buildup layer 31 where resin insulating layers 21 and 22 and a conductor layer 24 are laminated is formed at a substrate main surface 11 side of an organic wiring board 10.
Ngk Spark Plug Co., Ltd.


07/23/15
20150208500 
 Semiconductor device patent thumbnailSemiconductor device
A semiconductor device includes a terminal electrode and a terminal electrode placement member. The terminal electrode includes a substrate-fixed portion secured to the circuit substrate through a fastening member, and an external wiring connection portion to which an external wiring is connected.
Kabushiki Kaishi Toyota Jidoshokki


07/23/15
20150208476 
 Light source control device patent thumbnailLight source control device
A semiconductor light source control device includes a driver circuit, which generates a drive current iout flowing through a plurality of leds connected in series and which performs control such that the amount of the drive current is brought close to a target value, and bypass switches, which are on-off controlled by a control signal, the bypass switches being connected in parallel with the corresponding leds. The semiconductor light source control device is configured such that when the control signal indicates the off-state of the bypass switches, a voltage across the corresponding leds is clamped at an upper limit by using the bypass switches..
Koito Manufacturing Co., Ltd.


07/23/15
20150208468 
 Adjustable conveyance curing system patent thumbnailAdjustable conveyance curing system
Adjustable system and methods are provided that are used in curing a foam item. Induction heating assemblies, cooling mechanisms and a dynamic conveyance mechanism may be used in combination to heat and cool a mold containing the foam item as it is conveyed.
Nike, Inc.


07/23/15
20150208467 
 Induction heating generator and an induction cooking hob patent thumbnailInduction heating generator and an induction cooking hob
The present invention relates to an induction heating generator. The induction heating generator comprises or corresponds with a rectifier circuit (10).
Electrolux Home Products Corporation N. V.


07/23/15
20150208346 

Apparatus and support of additional maximum power reduction by user equipment


According to an example embodiment of this application, a method may include by a processor, receiving an indication of the version of an additional maximum power reduction table supported by a user equipment (401). According to an example embodiment of this application, a method may include by a processor, allocating different resources to a user equipment, receiving power headroom reports generated by the user equipment based on the allocated resources, and determining based on the received power headroom reports whether the user equipment supports an additional maximum power reduction table..
Nokia Corporation


07/23/15
20150208183 

Hearing aid device using dual electromechanical vibrator


According to an embodiment, a transcutaneous active bone anchored hearing aid device is disclosed. The transcutaneous active bone anchored hearing aid device comprises an audio processor comprising means for being externally worn by a hearing aid user and an implantable part comprising transducer means for providing a structure-borne acoustic signal to the skull bone of the hearing aid user.
Oticon Medical A/s


07/23/15
20150208178 

Electrically conductive membrane pump/transducer and methods to make and use same


An improved electrically conductive membrane pump/transducer. The electrically conductive pump/transducer includes an array of electrically conductive membrane pumps that combine to move a larger membrane (such as a membrane of pdms).
Clean Energy Labs, Llc


07/23/15
20150208177 

Electrically conductive membrane pump/transducer and methods to make and use same


An improved electrically conductive membrane pump/transducer. The electrically conductive pump/transducer includes an array of electrically conductive membrane pumps that combine to move a larger membrane (such as a membrane of pdms).
Clean Energy Labs, Llc


07/23/15
20150208175 

Electrically conductive membrane pump/transducer and methods to make and use same


An improved electrically conductive membrane pump/transducer. The electrically conductive pump/transducer includes an array of electrically conductive membrane pumps that combine to generate a desired sound by moving a membrane (such as a membrane of pdms), a piston, and/or by the use of pressurized airflow in the absence of such a membrane or piston.
Clean Energy Labs, Llc


07/23/15
20150208174 

Electrically conductive membrane pump/transducer and methods to make and use same


An improved electrically conductive membrane pump/transducer. The electrically conductive pump/transducer includes an array of electrically conductive membrane pumps that combine to generate a desired sound by moving a membrane (such as a membrane of pdms), a piston, and/or by the use of pressurized airflow in the absence of such a membrane or piston.
Clean Energy Labs, Llc


07/23/15
20150208166 

Enhanced spatial impression for home audio


Technologies pertaining to provision of customized audio to each listener in a plurality of listeners are described herein. A sensor outputs data that is indicative of locations of multiple listeners in an environment.
Microsoft Corporation


07/23/15
20150208149 

Housing, a support, an assembly, and a manufacture


A loudspeaker (130) comprises an electro-acoustic transducer such as a loudspeaker driver (135) mounted to a housing. The housing has side walls (132) subjected to a compressive force by bolts (50), which may extend between rigid end plates (133, 134).
Flare Audio Holdings Limited


07/23/15
20150208112 

Remote management system for at least one audiovisual information reproduction device


Method for remote management of at least one audiovisual information reproduction device comprising a host server connected to each audiovisual information reproduction device, the host server comprising a database containing management information for each audiovisual information reproduction device, wherein the host server also comprises a site manager communicating with the database, and comprising a number of screens, at least one first screen comprising a menu displaying the list of audiovisual information reproduction systems, validating the choice of each audiovisual information reproduction device causing the display of a first series of screens that the operator can use to modify the operating parameters of at least one selected audiovisual information reproduction device and/or a second series of screens that the operator can use to order at least one song for downloading onto the audiovisual information reproduction systems from a chosen list of devices or to delete at least one song, and/or a third series of screens displaying information about the use of an audiovisual information reproduction device.. .
Touchtunes Music Corporation


07/23/15
20150208102 

File generation apparatus, file generating method, file reproduction apparatus, and file reproducing method


Hdr information designated by hdr designating information is acquired from a file storing a track of a stream including the hdr information which is configured with feature information representing features of luminance of an hdr (high dynamic range) image having a dynamic range higher than that of an std (standard) image and conversion information representing a conversion rule of converting the one of the std image and the hdr image into the other and a target track including the hdr designating information designating the hdr information which is to be applied to the target track of interest in the hdr information of the track. The present technique can be applied to the case of acquiring hdr information which is to be applied to an image of a subtitle or the like stored in, for example, an mp4 file..

07/23/15
20150208078 

File generation apparatus, file generating method, file reproduction apparatus, and file reproducing method


Hdr information designated by hdr designating information is acquired from a file storing a track of a stream including the hdr information which is configured with feature information representing features of luminance of an hdr (high dynamic range) image having a dynamic range higher than that of an std (standard) image and conversion information representing a conversion rule of converting the one of the std image and the hdr image into the other and a target track including the hdr designating information designating the hdr information which is to be applied to the target track of interest in the hdr information of the track. The present technique can be applied, for example, to the case of storing data of images of a subtitle or the like and hdr information which is to be applied to the images in an mp4 file or the like..

07/23/15
20150208024 

Data generation apparatus, data generating method, data reproduction apparatus, and data reproducing method


Hdr information designated by hdr designating information is acquired from a file storing a track of a stream including the hdr information which is configured with feature information representing features of luminance of an hdr (high dynamic range) image having a dynamic range higher than that of an std (standard) image and conversion information representing a conversion rule of converting the one of the std image and the hdr image into the other and a target track including the hdr designating information designating the hdr information which is to be applied to the target track of interest in the hdr information of the track. The present technique can be applied, for example, to the case of applying hdr information to a subtitle having an smpte-tt format using xml..

07/23/15
20150208011 

Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode


In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate.
Invisage Technologies, Inc.


07/23/15
20150207958 

Apparatus, method, and medium


An apparatus that creates a color profile includes: a color reproduction target value acquiring unit that acquires a plurality of color reproduction target values; an output device color reproduction region acquiring unit that acquires a color reproduction region of an output device; a condition acquiring unit that acquires a condition to select the color reproduction target value; a color reproduction target value selecting unit that selects the color reproduction target value that satisfies the condition out of the plurality of color reproduction target values; and color profile creating units that create, based on the acquired color reproduction region of the output device and the selected color reproduction target value, the color profile in which the color reproduction target value is present in the color reproduction region of the output device.. .
Canon Kabushiki Kaisha


07/23/15
20150207629 

Semiconductor device and writing data to semiconductor device


A semiconductor device in related art has a problem that security at the time of writing data cannot be sufficiently assured. A semiconductor device of the present invention has: a unique code generating unit generating an initial unique code which is a value unique to a device and includes an error in a random bit; a first error correcting unit correcting an error in the initial unique code to generate an intermediate unique code; a second error correcting unit correcting an error in the intermediate unique code to generate a first determinate unique code; and a decrypting unit decrypting, with the first determinate unique code, transmission data obtained by encrypting confidential information with key information generated on the basis of the intermediate unique code by an external device to generate confidential information..
Renesas Electronics Corporation


07/23/15
20150207627 

Semiconductor integrated circuit, authentication system, and authentication method


A semiconductor integrated circuit includes a first circuit configured to provide a predetermined function and a second circuit configured to have a physically unclonable function, wherein the second circuit is incorporated into the first circuit such that a signal value of at least one node in the first circuit varies in response to an output of the second circuit, and the output of the second circuit is set such that the first circuit provides the predetermined function.. .
Fujitsu Limited


07/23/15
20150207565 

Interface circuit for transmitting and receiving signals between electronic devices, and semiconductor memory chip and operation processing device including the same


An interface circuit configured to transmit and receive signals between electronic devices is provided. The interface circuit includes an optical connection protocol manager configured to serialize a parallel transmission packet electrical signal generated based on output data to generate a serialized transmission packet electrical signal, parallelize a serial reception packet electrical signal to generate a parallelized reception packet electrical signal, and parse the parallelized reception packet electrical signal according to whether there is an error in the parallelized reception packet electrical signal to generate input data; and an electro-optical converter configured to convert the serialized transmission packet electrical signal into a transmission packet optical signal to output the transmission packet optical signal, receive a reception packet optical signal, and convert the reception packet optical signal into the serial reception packet electrical signal to provide the serial reception packet electrical signal to the optical connection protocol manager..
Electronics And Telecommunications Research Institute


07/23/15
20150207557 

Signal reproduction apparatus and signal reproduction method


A signal reproduction apparatus reproduces, from an input signal containing a weak signal which is a piece of transmission information and noise superimposed thereon, the weak signal through use of a stochastic resonance phenomenon. The apparatus includes n nonlinear elements nl1-nln (n is a natural number equal to or greater than 2) which receive n reception signals r (split signals) split to n branch lines l1-ln, and output nonlinear output signals nlo1-nlon; n delay elements d1-dn which delay the nonlinear output signals by different times, respectively; and a combiner which combines delay signals ds1-dsn output from the delay elements d1-dn.
National University Corporation Hokkaido University


07/23/15
20150207541 

Directional coupling communication apparatus


The invention relates to a directional coupling communication apparatus where the coupling impedance can be easily matched to reduce reflections, and thus, the speed of communication channels is increased as compared to that with inductive coupling, and at the same time, the reliability of communication is improved by increasing the signal intensity. Modules having a coupler where an input/output connection line is connected to a first end, and either a ground line or an input/output connection line to which an inverse signal of a signal to be inputted into the input/output connection line connected to the above-described first end is inputted is connected are layered on top of each other so that the couplers are couplers to each other using capacitive coupling and inductive coupling..
Keio University


07/23/15
20150207505 

Semiconductor device including enhanced variability


A physical unclonable function (puf) semiconductor device includes a semiconductor substrate, and a well formed in the semiconductor substrate. The well includes a first region having a first concentration of ions, and at least one second region having a second concentration that is less than the first concentration.
International Business Machines Corporation


07/23/15
20150207494 

Semiconductor circuit and operating the circuit


Provided is a semiconductor circuit which includes a first circuit configured to determine a voltage level of a feedback node based on a voltage level of input data, a voltage level of a latch input node, and a voltage level of a clock signal, a second circuit configured to pre-charge the latch input node based on the voltage level of the clock signal, a third circuit configured to pull down the latch input node based on the voltage level of the feedback node and the voltage level of the clock signal, a latch configured to output output data based on the voltage level of the clock signal and the voltage level of the latch input node, and a control circuit included in at least one of the first to third circuits and the latch and configured to receive the control signal.. .

07/23/15
20150207482 

Area-efficient degenerative inductance for a low noise amplifier (lna)


A device includes a first and a second low noise amplifier (lna), a first degenerative inductance coupled between the first lna and ground by a first ground connection, and a second degenerative inductance coupled between the second lna and ground by a second ground connection, the first and second degenerative inductances configured to establish negative inductive coupling between the first and second degenerative inductances.. .
Qualcomm Incorporated


07/23/15
20150207445 

Semiconductor device and driving apparatus


In a drive system using a single synchronous motor which is not paired with a synchronous generator, even if a failure occurs in an analog angle data converter for detecting the rotation angle of the synchronous motor, the driving of the synchronous motor can be continued in a temporal emergency manner. In addition to an analog angle data converter for converting an analog sense signal which is output from a rotation angle sensor of a synchronous motor to digital angle data, a digital angle data converter for converting digital data generated by an analog-to-digital converter to digital angle data is provided.
Renesas Electronics Corporation


07/23/15
20150207407 

Semiconductor device, semiconductor module, and electronic circuit


According to one embodiment, in semiconductor device, first semiconductor region is provided between first electrode and second electrode. Second semiconductor region is provided between first semiconductor region and second electrode.
Kabushiki Kaisha Toshiba


07/23/15
20150207392 

Electromechanical transducer and electroacoustic transducer


An electromechanical transducer of the invention comprises a structural unit, an armature, and two elastic units. The structural unit includes magnets, a yoke and a coil.
Rion Co., Ltd.


07/23/15
20150207377 

Electrical induction motor having a rotor with a bevel gear arrangement for driving a pair of opposite gear rings


An induction motor or generator assembly for converting either of an electrical input or rotating work input to a mechanical/rotating work or electrical output. An outer annular arrayed component is rotatable in a first direction and includes a plurality of magnets arranged in a circumferentially extending and inwardly facing fashion according to a first perimeter array, the outer component further incorporating a rotating shaft projecting from a central location.
Maestra Energy, Llc


07/23/15
20150207365 

Superconducting power generation system and associated generating power


A system includes a generator unit coupleable to a hydro turbine. The generator unit includes a casing having a first stationary support coupleable to a base disposed within water and a superconducting generator disposed within the casing.
General Electric Company


07/23/15
20150207364 

Microwave energy converter


A microwave energy converter, including at least one semiconductor and ohmic contact electrodes. The semiconductor acts as both a microwave receiving unit and a microwave rectifying unit of the microwave energy converter.
Sichuan University


07/23/15
20150207333 

Wireless power control


A remote device in accordance with the present invention includes an adaptive power receiver that receives wireless power from the wireless power supply by induction. The adaptive power receiver may be switched among two or more modes of operation, including, for example, a high-q mode and a low-q mode.
Access Business Group International Llc


07/23/15
20150207310 

Direct current voltage switch for switching a direct current in a branch of a direct current voltage network node


A device switches a direct current in a branch of a direct current voltage network node. The device contains a constant current path extending between two connection terminals, in which a mechanical switch is disposed.
Siemens Aktiengesellschaft


07/23/15
20150207298 

Method for producing semiconductor optical device


A method for producing a semiconductor optical device includes the steps of forming a first semiconductor substrate having a stacked semiconductor layer; adjusting a proportion of h2o molecules in a process chamber, the process chamber having an inner surface on which an alumite film is formed by anodizing; and, after the step of adjusting the proportion of h2o molecules, forming a substrate product by arranging the first semiconductor substrate in the process chamber and etching the stacked semiconductor layer using a dry etching method in which a halogen-based gas is used as an etching gas. In addition, the step of adjusting the proportion of h2o molecules in the process chamber includes a first substep of evacuating the process chamber; a second substep of dry-cleaning the inner surface of the process chamber; and a third substep of generating a plasma in the process chamber using a halogen-based gas..
Sumitomo Electric Industries, Ltd.


07/23/15
20150207296 

Tunable soi laser


A wavelength tunable silicon-on-insulator (soi) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end; and a phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium; wherein the phase-tunable waveguide platform includes a first distributed bragg reflector (dbr) and a second distributed bragg reflector (dbr); at least one of the distributed bragg reflectors having a comb reflectance spectrum; and wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium.. .
Rockley Photonics Limited


07/23/15
20150207293 

Method of producing a semiconductor laser element, and semiconductor laser element


A method of producing a semiconductor laser element includes a) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, c) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, d) fitting the laser bar on a top side of the carrier assemblage, and e) singulating to form the semiconductor laser elements after d).. .
Osram Opto Semiconductors Gmbh


07/23/15
20150207291 

Tunable soi laser


A wavelength tunable silicon-on-insulator (soi) laser comprising: a laser cavity including: a semiconductor gain medium having a front end and a back end, wherein a mirror of the laser cavity is located at the back end of the semiconductor gain medium; and a phase-tunable waveguide platform coupled to the front end of the semiconductor gain medium, the phase-tunable waveguide platform comprising: a first resonator and a second resonator; at least one resonator being a phase-tunable resonator; wherein the first resonator is any one of: an mmi device including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a fabry-perot filter; a ring resonator; or a waveguide fabry-perot filter; and wherein the second resonator is any one of: an mmi device including a pair of reflective surfaces defining a resonator cavity therebetween such that the device is configured to act as a fabry-perot filter; a ring resonator; or a waveguide fabry-perot filter.. .
Rockley Photonics Limited


07/23/15
20150207278 

Coaxial connector plug


A coaxial connector plug includes a first outer conductor with a cylinder shape extending in a first direction, a first center conductor that has a cylinder shape extending in the first direction and is provided inside the first outer conductor, and an insulation member that fixes the first center conductor to the first outer conductor. In the coaxial connector plug, a communication section to cause the inside and the outside of the first center conductor to communicate with each other is provided in an end portion of the first center conductor on one side in the first direction.
Murata Manufacturing Co., Ltd.


07/23/15
20150207229 

Full-band antenna


A full-band antenna includes a dielectric layer, and a first and a second patterned conductive layer provided on the dielectric layer. The first patterned conductive layer includes a feed portion and a loop portion outwardly extended from the feed portion.
Luxshare-ict Co., Ltd.


07/23/15
20150207221 

Antenna device


An antenna device includes a center substrate including a dielectric substrate and a center conductor on the dielectric substrate, and two ground plates sandwiching via an air layer the center substrate therebetween to form a feeder line. A hole is formed in the dielectric substrate on at least one side of the center conductor along a longitudinal direction of the center conductor..
Hitachi Metals, Ltd.


07/23/15
20150207106 

High efficiency organic light emitting devices


A method for producing high efficiency organic light emitting devices, that have an organic semiconductor active layer sandwiched between electrodes where at least one of the electrodes is a film of conductive nanowires, carbon nanoparticles, light scattering nanoparticles and a polymer support. The light scattering nanoparticles can be incorporated in the conductive nanowires, carbon nanoparticle or polymer support elements of the electrode.
The Regents Of The University Of California


07/23/15
20150207103 

Light-emitting device


Organic semiconductor layers comprise between a first electrode and a photoelectric converting layer a light extraction improving layer that contains at least silver or gold in part as a component, partially reflects light, and has transparency. The light extraction improving layer is in contact with or is inserted into a functional layer containing, for example, an organic semiconductor material, an oxide, a fluoride, or an inorganic compound having strong acceptor properties or strong donor properties with an ionization potential of 5.5 ev or higher, within the organic semiconductor layers..
Pioneer Corporation


07/23/15
20150207095 

Organic light-emitting display apparatus and manufacturing the same


Provided is an organic light-emitting display apparatus. The organic light-emitting display apparatus includes: a substrate; an organic light-emitting device provided on the substrate and comprising a first electrode, a second electrode, and an intermediate layer provided between the first electrode and the second electrode; an encapsulation layer covering the organic light-emitting device; a base layer disposed under the substrate and having a pin hole formed therein; and a thermal conductive layer filling the pin hole..
Samsung Display Co., Ltd.


07/23/15
20150207094 

Display panel and display device


A display panel and a display device, such as an organic light emitting panel that includes a spacer. The display panel and the display device include a semiconductor element including a first electrode; a passivation layer arranged on the semiconductor element and including a via hole exposing the first electrode; a second electrode arranged on the passivation layer and connected to the first electrode through the via hole; and a spacer arranged on the second electrode and adjacent to the via hole, wherein the spacer exposes at least a portion of a region where the via hole is formed..
Samsung Display Co., Ltd.


07/23/15
20150207087 

Photoelectric conversion element, imaging device, and optical sensor


The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes.

07/23/15
20150207076 

Polymers of benzodithiophene and their use as organic semiconductors


The invention relates to novel polymers of benzodithiophene, methods and materials for their preparation, their use as semiconductors in organic electronic (oe) devices, and to oe devices comprising these polymers.. .
Merck Patent Gmbh


07/23/15
20150207074 

Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing the same


A deposition method of fine particles, includes the steps of irradiating a fine particle beam formed by size-classified fine particles to an irradiated subject under a vacuum state, and depositing the fine particles on a bottom part of a groove structure formed at the irradiated subject.. .
Fujitsu Limited


07/23/15
20150207073 

Semiconductor memory apparatus and fabrication method thereof


Semiconductor memory apparatus and a method of fabricating the same are provided. The semiconductor memory apparatus includes a semiconductor substrate in which a cell area and a peripheral area are defined, a plurality of pillars formed in the a cell area of the semiconductor substrate to a first depth, a stepped part formed in the peripheral area to a height corresponding to the first depth, a recessed part formed in the stepped part to a second depth, and a core switching device formed in the recessed part..
Sk Hynix Inc.


07/23/15
20150207072 

Memory device and manufacturing memory device


According to one embodiment, a memory device includes a first conductive line extending in a first direction, second conductive lines each extending in a second direction intersect with the first direction, a third conductive line extending in a third direction intersect with the first and second directions, an insulating layer disposed between the second conductive lines and the third conductive line, resistance change elements each disposed on one of first and second surfaces of each of the second conductive lines in the third direction, and each connected to the third conductive line, a semiconductor layer connected between the first conductive line and one end of the third conductive line, and a select fet having a select gate electrode, and using the semiconductor layer as a channel.. .
Kabushiki Kaisha Toshiba


07/23/15
20150207063 

Semiconductor device


The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer mfr, the magnetization free layer mfr has a magnetic wall mw1 on the side of a magnetization fixed layer mfx1.
Renesas Electronics Corporation


07/23/15
20150207053 

Apparatus and harvesting energy in an electronic device


An apparatus, a method, and a computer program product are provided. The apparatus may be an electronic component.
Qualcomm Incorporated


07/23/15
20150207051 

Semiconductor light emitting device


A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively.

07/23/15
20150207050 

Semiconductor package and manufacturing method thereof


For a semiconductor package mounted on a mounting member with wiring which connects an electrode on the upper surface of an led device (semiconductor device) and an electrode at the mounting member side formed by a droplet discharge method or printing method, a stress relaxation film to reduce stresses applied to the wiring due to the difference in expansion/contraction between a land at the level difference sections and the wiring is formed at least at the level difference sections in the land which forms wiring, and the wiring is formed by a droplet discharge method or printing method on the stress relaxation film. The stress relaxation film may be formed of an insulating material for which the difference of the linear expansion coefficient from wiring is as small as possible and for which the young's modulus is as large as possible..
Fuji Machine Mfg Co., Ltd.


07/23/15
20150207046 

Light emitting device and manufacturing light emitting device


Provided is a light emitting device having a phosphor layer on a surface of a semiconductor light emitting element and reducing unevenness in light distribution color, and a method of manufacturing the same. A light emitting device 100 includes a light emitting element 20 with a supporting body which is composed of a semiconductor light emitting element 1 and a supporting body 10, and a phosphor layer 7 which continuously covers an upper surface and side surfaces of the semiconductor light emitting element 1, and side surfaces of the supporting body 10.
Nichia Corporation


07/23/15
20150207044 

Method for producing an optoelectronic component


A method for producing a plurality of optoelectronic components (100) comprises the steps: providing a semiconductor body (101) that is arranged on a carrier (114); and applying a converter material (105) to the semiconductor body (101) by means of a photoconductive transfer element (120).. .
Osram Opto Semiconductors Gmbh


07/23/15
20150207042 

Light emitting device and manufacturing light emitting device


A method of manufacturing a light emitting device includes preparing wafer with a plurality of light emitting elements arrayed on a growth substrate, on a first side of a semiconductor stacked layer body, forming a resin layer which includes metal wires respectively connected to a p-side electrode and an n-side electrode, forming a groove by removing at least portion of the resin layer from an upper surface side in a boundary region between the light emitting elements and exposing end surfaces of metal wires which are internal conductive members on an inner side surface defining a groove, forming electrodes for external connection respectively connecting to exposed end surfaces of metal wires, and singulating the wafer into a plurality of singulated light emitting elements.. .
Nichia Corporation


07/23/15
20150207041 

Phosphor separated from led by transparent spacer


To reduce absorption by an led die (12) of light emitted by a phosphor layer (48), the absorbing semiconductor layers of the led die (12) are separated from the phosphor layer by a relatively thick glass plate (44) affixed to the led die or by the led die transparent growth substrate. Therefore, phosphor light emitted at a sufficient angle towards the led die will pass through the transparent spacer (44) and exit the sidewalls of the spacer, preventing the light from being absorbed by the led die.
Koninklijke Philips N.v.


07/23/15
20150207039 

Light emitting diode chip having distributed bragg reflector and fabricating the same


A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, including a substrate, a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure including an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and configured to emit light of the first wavelength range, and first and second distributed bragg reflectors (dbrs) disposed on a second surface of the substrate. The first dbr is disposed closer to the substrate than the second dbr, the first wavelength range comprises a blue wavelength range, the first dbr comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength range, and the second dbr comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength range..
Seoul Viosys Co., Ltd.


07/23/15
20150207038 

Semiconductor light-emitting device


A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures.
Samsung Electronics Co., Ltd.


07/23/15
20150207037 

Nanowire sized opto-electronic structure and manufacturing the same


An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a mirror provided on a second conductivity type semiconductor side of the structure..
Glo Ab


07/23/15
20150207035 

Light-emitting element having a tunneling structure


A light-emitting element includes a first light-emitting stacked structure including a first active layer; and a tunneling structure on the light-emitting stacked structure including a first doped semiconductor layer; a first undoped semiconductor layer on the first doped semiconductor layer; a second undoped semiconductor layer on the first undoped semiconductor layer; a third undoped semiconductor layer between the first undoped semiconductor layer and the second undoped semiconductor layer, wherein the third undoped semiconductor layer includes a material different from that of the first undoped semiconductor layer; and a second doped semiconductor layer on the second undoped semiconductor layer, having a different conductivity from that of the first doped semiconductor layer; wherein the tunneling structure has a polarization field enhanced by the third undoped semiconductor layer.. .
Epistar Corporation


07/23/15
20150207034 

Semiconductor light emitting device


A semiconductor light emitting device may include a base semiconductor layer formed on a substrate and having defect regions therein; cavities disposed in regions corresponding to the defect regions on the base semiconductor layer; a capping layer disposed to cover at least one region of the base semiconductor layer and the cavities; and a light emitting structure disposed on the capping layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Lattice defects formed in the light emitting structure may be reduced to enhance luminous efficiency..
Samsung Electronics Co., Ltd.


07/23/15
20150207033 

Nanopyramid sized opto-electronic structure and manufacturing of same


Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, leds and transistors.
Glo Ab


07/23/15
20150207031 

Semiconductor light emitting structure


A semiconductor light emitting structure is provided. The semiconductor light emitting structure comprises a substrate, a first semiconductor layer, an active layer and a second semiconductor layer.
Lextar Electronics Corporation


07/23/15
20150207030 

Semiconductor light emitting structure


A semiconductor light emitting structure comprising a substrate, a patterned structure, a first semiconductor layer, an active layer and a second semiconductor layer is provided. The substrate has a first surface and a second surface opposite to the first surface.
Lextar Electronics Corporation


07/23/15
20150207028 

Iii-nitride nanowire led with strain modified surface active region and making thereof


A light emitting diode (led) device includes a semiconductor nanowire core, and an in(al)gan active region quantum well shell located radially around the semiconductor nanowire core. The active quantum well shell contains indium rich regions having at least 5 atomic percent higher indium content than indium poor regions in the same shell.
Glo Ab


07/23/15
20150207027 

Semiconductor component and process for fabricating a semiconductor component


A semi-conducting component including a semi-conducting layer of a first conductivity type including a plurality of semi-conducting zones of a second conductivity type opposite that of the semi-conducting layer, and an insulating layer. The component further includes a first bias mechanism configured to bias the semi-conducting layer and a second bias mechanism configured to bias a semi-conducting zone.
Commissariat A L'energie Atomique Et Aux Ene Alt


07/23/15
20150207026 

Method of manufacturing semiconductor light emitting device


A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature.
Samsung Electronics Co., Ltd.


07/23/15
20150207025 

Method of manufacturing semiconductor light emitting device and manufacturing semiconductor light emitting device package


A method of manufacturing a semiconductor light emitting device includes forming, on a substrate, a first region of a light emitting structure and the light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A protective layer is formed on the first region in a first chamber.

07/23/15
20150207023 

A fabricating pixelated silicon device cells


A method, apparatus and system for flexible, ultra-thin, and high efficiency pixelated silicon or other semiconductor photovoltaic solar cell array fabrication is disclosed. A structure and method of creation for a pixelated silicon or other semiconductor photovoltaic solar cell array with interconnects is described using a manufacturing method that is simplified compared to previous versions of pixelated silicon photovoltaic cells that require more microfabrication steps..
Sandia Corporation


07/23/15
20150207022 

System for the production of single crystal semiconductors and solar panels using the single crystal semiconductors


A process and the required technical arrangement has been developed to produce single crystal solar panels or otherwise used semiconductors, which starts with the raw material to produce single crystal copper ribbons, extruded directly from the melt, with unharmed and optical surfaces onto which in the next unit a silicon or germanium film will be deposited. In the next unit the copper ribbon will be removed from the silicon film, whilst a hard plastic support or ceramic support is mounted, leaving copper contours on the silicon film to be used as electrical conductors or contacts.
Grain Free Products, Inc.


07/23/15
20150207015 

Apparatus and optically initiating collapse of a reverse biased p-type-n-type junction


An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased pn junction causes a semiconductor switch to transition from a current blocking mode to a current conduction mode in a planar electron avalanche. This switch structure and the method of optically initiating the switch closure is applicable to conventional semiconductor switch configurations that employ a reverse-biased pn junction, including, but not limited to, thyristors, bipolar transistors, and insulated gate bipolar transistors..
Applied Physical Electronics, L.c.


07/23/15
20150207013 

Inverted metamorphic multijunction solar cells having a permanent supporting substrate


The present disclosure provides a method of manufacturing a solar cell that includes providing a semiconductor growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell; applying a metal contact layer over said sequence of layers; affixing the adhesive polyimide surface of a permanent supporting substrate directly over said metal contact layer and permanently bonding it thereto by a thermocompressive technique; and removing the semiconductor growth substrate.. .
Solaero Technologies Corp.




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