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Diode patents

      

This page is updated frequently with new Diode-related patent applications.




 Ultrathin lcd module and liquid crystal display patent thumbnailUltrathin lcd module and liquid crystal display
An ultrathin lcd module and a liquid crystal display are provided. The ultrathin lcd module has a printed circuit board, a liquid crystal panel connected with the printed circuit board through at least one flexible circuit board, and an array light source of light emitting diodes disposed between the printed circuit board and the liquid crystal panel, which has a plurality of light emitting diodes and a substrate to carry the light emitting diodes.
Shenzhen China Star Optoelectronics Technology Co., Ltd.


 Light-emitting diode (led) light sets patent thumbnailLight-emitting diode (led) light sets
Apparatuses and systems are provided for changing the spectrum of light emission from a light-emitting diode (led) light set. The led light set may include leds, each of which having at least a first led chip and a second led chip configured to emit light at differing wavelengths.

 Light-emitting diode (led) driving device and led lighting device containing the same patent thumbnailLight-emitting diode (led) driving device and led lighting device containing the same
The present disclosure provides a light-emitting diode (led) driving device, including a control unit and a power unit integrated on a packaging substrate to form an integrated circuit (ic). The control unit is electrically connected to the power unit for controlling the power unit to convert an ac current to a dc current for an led load to emit light.
Sengled Co., Ltd.


 Devices and systems having ac led circuits and methods of driving the same patent thumbnailDevices and systems having ac led circuits and methods of driving the same
A lighting device and system having at least one circuit, the circuit having at least two leds connected in series, parallel or anti-parallel configuration and at least one current limiting diode. The device or system may be driven with ac or dc power and may further include a sensor and polarity switching circuit to utilize all leds within the circuit when drive by dc power..
Lynk Labs, Inc.


 X-ray detector and x-ray apparatus patent thumbnailX-ray detector and x-ray apparatus
An x-ray detector includes a plurality of photodiodes arranged in a matrix shape and respectively connected to switching devices, a plurality of gate lines formed in a first direction and connected to the switching devices; a plurality of data lines, wherein n data lines are formed in each second-direction column of the matrix shape, wherein n is greater than 1; and a read-out circuit connected to the plurality of data lines and configured to read out photocurrents from the plurality of photodiodes and convert the photocurrents into x-ray image data, wherein each of switching devices included in each second-direction column of the matrix shape is connected to one of the n data lines.. .
Samsung Electronics Co., Ltd.


 Digital unit cell with analog counter element patent thumbnailDigital unit cell with analog counter element
According to one aspect, embodiments herein provide a digital unit cell comprising a photodiode, an integration capacitor, a comparator configured to compare a voltage across the integration capacitor with a threshold voltage and to generate a control signal at a first level each time the voltage across the integration capacitor is greater than the threshold voltage, a charge subtraction circuit configured to receive the control signal at the first level and to discharge accumulated charge on the integration capacitor each time the control signal at the first level is received, at least one analog counter configured to receive the control signal at the first level from the comparator and to decrease a count voltage by a fixed amount each time the control signal at the first level is received from the comparator, and a counter readout circuit configured to provide the count voltage to an image processing circuit.. .
Raytheon Company


 Electronic device with substrate current management patent thumbnailElectronic device with substrate current management
An electronic device with substrate current management. The electronic device has a semiconductor substrate in which a schottky diode is formed.
Monolithic Power Systems, Inc.


 Power conversion device including primary inverter, transformer, secondary converter patent thumbnailPower conversion device including primary inverter, transformer, secondary converter
A power conversion device includes first and second terminals connected to a dc power source, third and fourth terminals connected to a commercial power system or a load, a transformer including a primary winding having seventh and eighth terminals and a secondary winding having fifth and sixth terminals, an inverter circuit connected between the first and second terminals and the seventh and eighth terminals, a converter circuit connected between the fifth and sixth terminals and the third and fourth terminals, a diode bridge including first and second ac input terminals connected to the fifth and sixth terminals, respectively, and first and second dc output terminals, a first capacitor connected between the first and second dc output terminals, and a first resistor connected in parallel with the first capacitor between the first and second dc output terminals.. .
Panasonic Intellectual Property Management Co., Ltd.


 Power conversion device including primary inverter, transformer, secondary converter, and controller patent thumbnailPower conversion device including primary inverter, transformer, secondary converter, and controller
A power converter includes first to fourth terminals, a transformer including primary and secondary windings, an inverter connected between the first and second terminals and the primary winding, a converter connected between fifth and sixth terminals, and a controller. The converter includes first to eighth switch circuits each including a diode and a switch connected in parallel.
Panasonic Intellectual Property Management Co., Ltd.


 Dc-dc voltage conversion device patent thumbnailDc-dc voltage conversion device
In a dc-dc voltage conversion device, overheat of a diode element connected in anti-parallel with a semiconductor switching element is a problem, and in order to resolve this, a temperature of a semiconductor switching element of a main conversion circuit is detected, a temperature of a diode element connected in parallel with the semiconductor switching element is calculated using a correction calculation of the detected semiconductor switching element temperature value in accordance with a step-up ratio of the dc-dc voltage conversion device, and diode element overheat protection is carried out in accordance with the calculated temperature value.. .
Mitsubishi Electric Corporation


Laser diode

A laser diode with an improved kink level in the l-i characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride iii-v compound semiconductor containing at least gallium (ga) in 3b-group elements and at least nitrogen (n) in 5b-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer.
Sony Corporation

Optical amplifier

An erbium doped block of glass has input port and reflective end faces arranged such that a signal is launched into the block and is amplified as it traverses the block following a zig-zag path. A laser diode pump is focused to excite erbium ions within the block thereby amplifying the input signal light traversing the block numerous times.

Phased-array antenna with in-plane optical feed and manufacture

A phased antenna array comprises a plurality of antennas and photodiodes arranged on a substrate. Each antenna is driven by an electrical signal output by the photodiode.
Phase Sensitive Innovations, Inc.

Organic light emitting diode and light emitting diode display

In equation 1, n*k (λ=405 nm) represents an optical value that is a product of a refractive index and an absorption coefficient in a 405 nanometer wavelength.. .

Organic light emitting diode

The described technology relates to an organic light emitting diode including: a first electrode; a second electrode overlapping the first electrode; an organic emission layer between the first electrode and the second electrode; and a capping layer on the second electrode, wherein the capping layer has an absorption rate of 0.25 or more for light having a wavelength of 405 nm, thereby preventing degradation of the organic emission layer by blocking the light of the harmful wavelength region and providing the organic light emitting diode in which a blue emission efficiency is not deteriorated.. .
Samsung Display Co., Ltd

Method of manufacturing light scattering layer and organic light-emitting diode

A method of manufacturing a light scattering layer and an organic light-emitting diode are provided. The manufacturing method includes: depositing a material having a low refractive index value in hole structures of a mask on a base; removing the mask, and forming a plurality of raised structures on the base; depositing a material having a high refractive index value between the raised structures to form a planarization layer, thereby manufacturing a light scattering layer constituted by the raised structures and the planarization layer on the base.
Wuhan China Star Optoelectronics Technology Co., Ltd.

Organic light-emitting diode structure and fabrication method thereof, related display panel, and related display device

The present disclosure provides an organic light-emitting diode device (oled) structure for compensating blue light emission. The oled structure in a substrate with a thin-film transistor layer, the substrate being substantially transparent; and a first electrode layer on the substrate, the alit electrode being substantially transparent; a first light-emitting layer on the first electrode layer with one or more light-emitting portions for emitting light for compensating blue light.
Boe Technology Group Co., Ltd

Color filter substrate and fabrication method thereof, oled structure, related display panel, and related display device

The present disclosure provides a color filter substrate used in an organic light-emitting diode (oled) or liquid crystal (lc) display structure for improving a contrast ratio and light output. The color filter substrate includes a substrate; a color filter layer comprising a plurality of pixel units; and a reflective metallic matrix comprising a plurality of reflective metallic matrix elements surrounding each pixel unit..
Boe Technology Group Co., Ltd

Iridium complex, manufacturing same, and organic light-emitting devices using same

An iridium complex is disclosed. The iridium complex with a new type of primary ligand and (4-trifluoromethyl) tetraphenylphosphorane as an auxiliary ligand takes any one of 2-(4,6-bi trifluoromethyl-3-) pyridine, 2-(4,6-bi trifluoromethyl-4-) pyridine, 2-(4,6-bi trifluoromethyl-3-) pyrimidine, 2-(4,6-bi trifluoromethyl-4-) pyrimidine, 2-(4,6-bi trifluoromethyl-3-) pyrazinyl, 2-(4,6-bi trifluoromethyl-4-) pyrazinyl, 2-(4,6-bi trifluoromethyl-3-) triazine, 2-(4,6-bi trifluoromethyl-4-) triazine derivatives as primary ligands in its molecule.
Aac Technologies Pte, Ltd.

Iridium complex, manufacturing same, and organic light-emitting devices using same

An iridium complex is disclosed. The iridium complex with a new type of primary ligand and (4-trifluoromethyl) tetraphenylphosphorane as an auxiliary ligand takes any one of 2-(4,6-bi trifluoromethyl-3-) pyridine, 2-(4,6-bi trifluoromethyl-4-) pyridine, 2-(4,6-bi trifluoromethyl-3-) pyrimidine, 2-(4,6-bi trifluoromethyl-4-) pyrimidine, 2-(4,6-bi trifluoromethyl-3-) pyrazinyl, 2-(4,6-bi trifluoromethyl-4-) pyrazinyl, 2-(4,6-bi trifluoromethyl-3-) triazine, 2-(4,6-bi trifluoromethyl-4-) triazine derivatives as primary ligands in its molecule.
Aac Technologies Pte, Ltd.

Iridium complex, manufacturing same, and organic light-emitting devices using same

An iridium complex is disclosed. The iridium complex with tetra(4-fluorophenyl) phosphorane as an auxiliary ligand, the series of iridium complex takes any one of 2-(4,6-bi trifluoromethyl)pyridine, 2-(4,6-bi trifluoromethyl)pyrimidine, 2-(4,6-bi trifluoromethyl)pyrazinyl and 2-(4,6-bi trifluoromethyl) triazine derivatives as primary ligands in its molecule.
Aac Technologies Pte, Ltd.

Iridium complex, manufacturing same, and organic light-emitting devices using same

An iridium complex is disclosed. The iridium complex with tetraphenylphosphorane as an auxiliary ligand takes any one of 2-(4,6-bi trifluoromethyl)pyridine, 2-(4,6-bi trifluoromethyl)pyrimidine, 2-(4,6-bi trifluoromethyl)pyrazinyl and 2-(4,6-bi trifluoromethyl) triazine derivatives as primary ligands in its molecule.
Aac Technologies Pte, Ltd.

Display apparatus

A display apparatus includes a substrate, a light-emitting diode (“led”) provided above the substrate, an insulating layer provided above the led, and a wire grid polarizer (“wgp”) provided above the insulating layer.. .
Samsung Display Co., Ltd.

Light-emitting diode chips with enhanced brightness

According to at least some embodiments of the present disclosure, a light-emitting diode (led) chip includes a semiconductor material portion, a transparent conductive layer disposed above the semiconductor material portion, a current blocking layer disposed above the transparent conductive layer, one or more electrodes disposed above the current blocking layer, and a plurality of electron outflow channels that electrically interconnect at least one electrode and the semiconductor material portion across the transparent conductive layer and the current blocking layer.. .
Xiamen Changelight Co., Ltd.

Light emitting diode and manufacturing the same

A light emitting diode and a method of manufacturing the light emitting diode are provided. The light emitting diode includes an n-type semiconductor layer, an inclined type superlattice thin film layer, an active layer, and a p-type semiconductor layer.
Industry Foundation Of Chonnam National University

Thermo-electrically pumped light-emitting diodes

Contrary to conventional wisdom, which holds that light-emitting diodes (leds) should be cooled to increase efficiency, the leds disclosed herein are heated to increase efficiency. Heating an led operating at low forward bias voltage (e.g., v<kbt/q) can be accomplished by injecting phonons generated by non-radiative recombination back into the led's semiconductor lattice.

Semiconductor layered structure, photodiode and sensor

A semiconductor layered structure includes a base layer, a quantum well structure, and a contact layer. The base layer, the quantum well structure, and the contact layer are disposed so as to be stacked in this order.
Sumitomo Electric Industries, Ltd.

Semiconductor devices with integrated schotky diodes and methods of fabrication

An embodiment of a semiconductor device includes a semiconductor substrate that includes an upper surface and a channel, a gate electrode disposed over the substrate electrically coupled to the channel, and a schottky metal layer disposed over the substrate adjacent the gate electrode. The schottky metal layer includes a schottky contact electrically coupled to the channel which provides a schottky junction and at least one alignment mark disposed over the semiconductor substrate.
Nxp Usa, Inc.

Organic light emitting diode display

An organic light emitting diode display includes a plurality of pixels. At least one pixel is connected to a scan line receive a scan signal, a data line to receive a data signal, and voltage line to receive a driving voltage.
Samsung Display Co., Ltd.

Organic light-emitting diode display device and manufacturing the same

An organic light emitting device includes: a substrate; a first electrode provided on the substrate; a metal pattern provided along an edge of the first electrode; and a pixel definer provided on the metal pattern. The pixel definer covers an end portion of the first electrode and an end portion of the metal pattern.
Samsung Display Co., Ltd.

Display device

A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor layer; a first top gate electrode disposed above the first semiconductor layer; a first bottom gate electrode disposed under the first semiconductor layer; a first source electrode electrically connected to the first semiconductor layer; and a first drain electrode electrically connected to the first semiconductor layer, wherein the first drain electrode is electrically connected to the light emitting diode.
Innolux Corporation

Image sensor, manufacturing the same, and image processing device having the image sensor

An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.. .
Samsung Electronics Co., Ltd.

Light emitting diode module, display panel having the same and manufacturing the same

In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode.
Samsung Electronics Co., Ltd.

Display device

A display device includes a display substrate; a thin film transistor over the display substrate; a bank layer covering the thin film transistor, where an opening is defined through the bank layer; an emission layer in the opening and including a micro p-n diode; a first electrode electrically connected between the thin film transistor and the emission layer; a second electrode over the emission layer; and a sealing layer covering the second electrode. The thin film transistor and the emission layer are adjacent to each other in a horizontal direction of the display substrate..
Samsung Display Co., Ltd.

Display apparatus and manufacturing the same

A display apparatus includes: a display substrate; a light-emitting diode (“led”) disposed on the display substrate and which emits light; a passivation layer disposed on the display substrate and surrounding the led; a first conductive layer disposed on the led and the passivation layer; and a capping layer disposed on the led and which adjusts a proceeding path of light emitted from the led, where the first conductive layer includes a first region which overlaps the capping layer and a second region which does not overlap the capping layer, and the first region and the second region of the first conductive layer have different light characteristics from each other.. .
Samsung Display Co., Ltd.

Nonvolatile memory cells having lateral coupling structures and nonvolatile memory cell arrays including the same

A nonvolatile memory (nvm) cell includes a selection transistor configured to have a selection gate terminal coupled to a word line and a source terminal coupled to a source line, a cell transistor configured to have a floating gate electrically isolated, a drain terminal coupled to a bit line and sharing a junction terminal with the selection transistor, a first coupling capacitor disposed in a first connection line coupled between the word line and the floating gate, and a p-n diode and a second coupling capacitor disposed in series in a second connection line coupled between the word line and the floating gate. An anode and a cathode of the p-n diode are coupled to the second coupling capacitor and the word line, respectively.
Sk Hynix Inc.

Five-transistor-one-capacitor amoled pixel driving circuit and pixel driving method based on the circuit

An amoled pixel driving circuit has a 5t1c structure, which includes a first, a second, a third, a fourth, and a fifth thin film transistors, a capacitor, and an organic light emitting diode (oled). The first thin film transistor is a drive thin film transistor.
Shenzhen China Star Optoelectronics Technology Co. Ltd.

Amoled pixel driving circuit and pixel driving method

An amoled pixel driving circuit involves a 4t2c structure, including first to fourth thin film transistors, first and second capacitors, and an organic light emitting diode. First and second global signals and a reference voltage are supplied to the circuit.
Shenzhen China Star Optoelectronics Technology Co., Ltd.

Pixel circuit and driving method therefor, and organic light-emitting display

A pixel circuit and a method therefor, and an organic light-emitting display. The pixel circuit initializes an anode of an organic light-emitting diode (oled) by means of a first thin-film transistor, a second thin-film transistor and a seventh thin-film transistor, and initializes a gate and a drain of a sixth thin-film transistor serving as a driving element by means of the first thin-film transistor, a third thin-film transistor and the seventh thin-film transistor so that the service life of the oled and the service life of the sixth thin-film transistor are prolonged.
Kunshan Go-visionox Opto-electronics Co., Ltd.

Video capturing device for predicting special driving situations

A video device for predicting driving situations while a person drives a car is presented. The video device includes multi-modal sensors and knowledge data for extracting feature maps, a deep neural network trained with training data to recognize real-time traffic scenes (tss) from a viewpoint of the car, and a user interface (ui) for displaying the real-time tss.
Nec Laboratories America, Inc.

Systems and methods to provide reference voltage or current

A current mirroring circuit including: a first portion having a first resistor and a first transistor, the first transistor having a control terminal coupled to a control terminal of a first diode-connected transistor; and a second portion having a second resistor and a second transistor, the second transistor having a control terminal coupled to a control terminal of a second diode-connected transistor, the first portion being in electrical communication with a first power level and the second portion being in electrical communication with a second power level, the first portion being coupled to the second portion.. .
Qualcomm Incorporated

High power visible laser with a laser-fabricated non-linear waveguide

Novel methods and systems for waveguide fabrication and design are disclosed. Designs are described for fabricating ridge, buried and hybrid waveguides by a femtosecond pulsed laser.
Dolby Laboratories Licensing Corporation

Optical transmitter assembly for vertical coupling

The invention relates to an optical transmitter assembly (ota) for vertical coupling of light into a chip, and to a method for manufacturing the ota. The ota includes a laser diode, a microlens and a turning mirror mounted at a top face of a supporting substrate within a sealed enclosure, and an optical component, such as an optical isolator, a polarizer, or a microlens disposed in a substrate cavity that opens to the back face of the substrate.
Lumentum Operations Llc

Light guide for display light enhancement

A display in a portable information handling system may have a narrow or no border. A light guide for display light enhancement used to illuminate the display may be formed with concave indentations at a first face that receives light from a light source, such as a string of light emitting diodes.
Dell Products L.p.

Diode array-based digitized miniature ultra-low-power-consumption impact monitoring system

The present invention discloses a diode array-based digitized miniature ultra-low-power-consumption impact monitoring system, which belongs to the technical field of aircraft structural health monitoring. The impact monitoring system consists of a miniature sensor array interface, a passive band-pass filter array, a diode array, a digital conversion and management module, an on-board bus communication module, a monitoring data storage module, a self-powering module, and a miniature communication and power supply interface.
Nanjing University Of Aeronautics And Astronautics

Light detection module for oct device and oct device

A light detecting module that detects interference light that has exited an exit end surface of an optical fiber in an oct instrument includes: a ball lens including an incident surface entered by the interference light that has exited the exit end surface, and an exit surface exited by the interference light that has entered the incident surface; and a photodiode including a detecting surface entered by the interference light that has exited the exit surface. The interference light obliquely enters the incident surface with respect to a perpendicular line at an incident position of the interference light.
Hamamatsu Photonics K.k.

Vehicle sunroof with switchable glazing and side-firing light emitting diodes and/or methods of making the same

Certain example embodiments relate to a vehicle window (e.g., sunroof). Side-firing leds are provided between first and second substantially parallel substrates and emit light towards central regions of the window.
Guardian Industries Corp.

Sheet metal processing method using laser beams and direct diode laser processing device for carrying it out

Using a transmission fiber for transmitting laser beams of multiple wavelengths oscillated by a ddl module, and a laser processing machine for cutting a sheet metal with a processing head that condenses the laser beams of multiple wavelengths and irradiates them onto the sheet metal, a mild steel plate or an aluminum plate is cut, and by cutting a mild steel plate with a thickness greater than or equal to 1 mm and less than or equal to 5 mm, a surface roughness (ra) of a cut surface of the cut mild steel plate is less than or equal to 0.4 μm, and when an aluminum plate with a thickness greater than or equal to 1 mm and less than or equal to 5 mm is cut, a surface roughness (ra) of a cut surface of the cut aluminum plate is less than or equal to 2.5 μm.. .
Amada Holdings Co., Ltd.

Fetal pulse oximeters and methods of using the same

One aspect of the invention provides a fetal pulse oximeter including: a shape-memory member adapted and configured to expand outward and define a loop when advanced out of a cannula; one or more light sources mounted on the shape memory member and facing toward a center of the loop, the one or more light sources adapted and configured to generate red and infrared light; and a photodiode mounted on the shape memory member and facing toward a center of the loop. Another aspect of the invention provides a method for measuring recording pulse and blood oxygen saturation.
Baylor College Of Medicine

Insect trap using uv led lamp

The present disclosure relates to an insect trap using an ultraviolet light-emitting diode (uv led) lamp, and more particularly, to an insect trap using, in place of a conventional uv light source lamp, a uv led lamp that significantly increases the insect trapping efficiency. The insect trap according to the present disclosure includes: a uv led lamp disposed in an air inlet portion of the duct, and including a printed circuit board (pcb) that has a uv led chip mounted thereon; an installing portion for installing the uv led lamp on; and a trapping portion provided near the installing portion..
Seoul Viosys Co., Ltd.

Method and assembly for knotting and splicing a line

A method and assembly for knotting a line restrains a fishing line in a loose knot pattern while a knot or splice is formed in the fishing line to enable tightening the knot by stretching the line. The assembly includes a pair of cylinders having an external surface, a first end, and a second end.

Daylight harvesting light fixture and control system for same

A daylight harvesting light fixture has a housing defining a light aperture, a light emitting diode (led) in the housing for providing illumination through the aperture, a power supply for supplying drive current to the led; a photosensor for sensing ambient illumination through the housing aperture, and a control circuit programmed and connected for a) turning off current to the led for a dark interval imperceptible to the human eye; b) deriving an ambient illumination level signal based on the photosensor output while the led is turned off; c) calculating an led light output complementary to measured ambient illumination to achieve a target ambient illumination; and d) restoring drive current to the led at a level adjusted to produce the calculated complementary led light output. This sequence may be repeated periodically to maintain a target ambient illumination..
Dmf, Inc.

Light emitting diode lamp receiving contactless burning signal and system for the same and burning address the same

A light emitting diode lamp receiving a contactless burning signal includes at least a light emitting diode and a light emitting diode driving apparatus. The light emitting diode driving apparatus includes a burning signal detector, an address burning controller, an address memory and a light emitting diode driving circuit.
Semisilicon Technology Corp.

Illumination device having a light emitting source operated via a clamped series resonator converter

An illumination device is provided. The illumination device includes a light emitting source and a clamped series resonant converter (csrc) coupled thereto.
General Electric Company

Led powering circuit

A circuit to provide power to a load includes a first diode having a cathode connectable to a second terminal of a ptc thermistor and an anode connectable to a first node of the load. The anode of a second diode is connectable to the second terminal of the ptc thermistor and the cathode thereof is connectable to a second node of the load.
Lighting Science Group Corporation

Embedded active matrix organic light emitting diode (amoled) fingerprint sensor and self-compensating amoled

Various embodiments provide a computing device that includes a self-compensating system embedded in the device's display active area. The self-compensating system is composed of a series of pin diode circuits that include pin diodes that are formed as active matrix organic light emitting diodes (amoleds) at least partially within the gap between pixels in the display active area..
Motorola Mobility Llc

Sensing pixel having sampling circuitry to sample photodiode signal multiple times before reset of photodiode

An electronic device disclosed herein includes a photodiode, and a plurality of storage components each configured to independently sample and hold charges from the photodiode during each of a plurality of integration periods without discharging the held charge between successive integration periods of the plurality thereof. Each storage component accumulates the charges from the photodiode for a given time window during each integration period, with the given time window for each storage component being different than the given time window for each other storage component.
Stmicroelectronics (grenoble 2) Sas

Line sensor, image reading device, and image forming apparatus

In a cmos sensor 107 including a light-receiving-element row in which a plurality of photodiodes 1204 are disposed side by side in a main scanning direction and a plurality of color filters 1202 that are disposed in correspondence with the plurality of photodiodes 1204, the center of each color filter 1202 is displaced in a direction of the center of the light-receiving-element row from the center of the photodiode 1204 corresponding to the color filter.. .

Host-equalized optical links

An embodiment includes a host-equalized optical transceiver. The host-equalized optical transceiver includes a driver analog interface, a linear laser diode driver (lldd), and an optical transmitter.
Finisar Corporation

Half bridge circuit, operating a half bridge circuit and a half bridge circuit package

A half bridge circuit includes an input connection configured to supply an electric input, an output connection configured to supply an electric output to a load to be connected to the output connection, a switch and a diode arranged between the input connection and the output connection and a voltage limiting inductance arranged in series between the switch and the diode. The voltage limiting inductance is configured to limit, upon switching the switch, a maximum voltage across the switch to below a breakdown voltage of the switch.
Infineon Technologies Austria Ag

Double balanced mixer

A fet based double balanced mixer (dbm) that exhibits good conversion gain and iip3 values and provides improved linearity and wide bandwidth. In one embodiment, a first balun is configured to receive a local oscillator (lo) signal and generate two balanced lo signals that are coupled to two corresponding opposing nodes of a four-node fet ring.
Peregrine Semiconductor Corporation

Balanced unilateral frequency quadrupler

An integrated frequency quadruplet consists of a pair of balanced frequency doublers that are driven in phase quadrature using a hybrid coupler. This approach results, effectively, in a “unilateral” multiplier that presents a match to the input-driving source, irrespective of the impedance of the doubler stages.
University Of Virginia

Power supply system

A converter includes one chip constituted a switching device and a diode. An electronic control unit is configured to calculate a temperature estimated value of the switching device from control conditions of the converter, restrict a control upper-limit value of charge power or discharge power of a battery, when a detection value of a temperature sensor is higher than the temperature estimated value of the switching device, and the detection value of the temperature sensor exceeds a protection temperature of the diode, and restrict a control upper-limit value of charge power or discharge power of the battery, when the detection value of the temperature sensor is lower than the temperature estimated value of the switching device, and the detection value of the temperature sensor exceeds a protection temperature of the switching device..
Toyota Jidosha Kabushiki Kaisha

Chopper circuit

A chopper circuit includes a controller that performs control of turning on a second switching device when a short circuit detector detects a short circuit of a first diode, and performs control of turning on a first switching device when the short circuit detector detects a short circuit of a second diode.. .
Fuji Electric Co., Ltd.

Self-generating power generation system

A self-generating power generation system is a generating system that is designed to use a portion of the incoming power to generate additional power to make the system highly efficient. The system may be used in a motor vehicle and take advantage of the available kinetic energy of the turning wheels regenerate power to multiply the efficiency.

Integrated gate driver for motor control

An integrated gate driver for motor control includes a first diode coupled to an upper rail and providing a voltage on a first connector and a power amplifier coupled between the first connector and a second connector that can be coupled to a source of a high-side power transistor. The power amplifier receives a control signal and provides an output signal to a second pin for driving a gate of the high-side power transistor.
Texas Instruments Incorporated

Switching power supply device

A switching power supply device has: a switching output stage configured to generate from an input voltage an output voltage to feed it to a load; a controller ic configured to control the switching output stage such that a feedback voltage applied to an output feedback terminal of the controller ic remains equal to a predetermined reference voltage; a first resistor connected between the output terminal of the output voltage and the output feedback terminal; a second resistor connected between the output feedback terminal and a ground terminal; a sense resistor configured to convert the output current passing between the load and the ground terminal into a sense voltage; and a first diode whose anode is connected to the application terminal of the sense voltage and whose cathode is connected to the output feedback terminal.. .
Rohm Co., Ltd.

High brightness coherent multi-junction diode lasers

Laser diodes formed on a common substrate with layers of suitable thickness and refractive indices produce output beams that are coherently coupled. A phase mask can be situated to produce phase differences in one or more of the output beams to produce a common wavefront phase.
Nlight, Inc.

Dual closed loop for laser power control

A modulation control path, that processes a monitor photodiode signal and a reference signal, including at least one filter and at least one mixer. The modulation control path generates a modulation control signal.

Laser module

A laser module according to the present disclosure includes a laser diode, a first collimating lens, and a beam twister. The laser diode includes a plurality of emitters and emits laser light from each of the plurality of emitters through a light emission surface.
Panasonic Intellectual Property Management Co., Ltd.

Diode laser packages with flared laser oscillator waveguides

A high brightness diode laser package includes a plurality of flared laser oscillator waveguides arranged on a stepped surface to emit respective laser beams in one or more emission directions, a plurality of optical components situated to receive the laser beams from the plurality of flared laser oscillator waveguides and to provide the beams in a closely packed relationship, and an optical fiber optically coupled to the closely packed beams for coupling the laser beams out of the diode laser package.. .
Nlight, Inc.

Light-emitting diode device

An optoelectronic device includes a printed circuit board, and a light source arranged on a surface of the printed circuit board, said light source comprising at least one luminous face formed by at least one light-emitting diode wherein the light-emitting diode is electrically connected to the printed circuit board, wherein the light-emitting diode is at least partly enclosed by molding by a potting compound.. .
Osram Opto Semiconductors Gmbh

Light emitting diodes with n-polarity and associated methods of manufacturing

Light emitting diodes (“leds”) with n-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate.
Micron Technology, Inc.

Uv light emitting diode package and light emitting diode module having the same

A uv led package and an led module including the same. The uv led package includes an upper semiconductor layer; a mesa disposed under the upper semiconductor layer, having an inclined side surface, and comprising an active layer and a lower semiconductor layer; a first insulation layer covering the mesa and having an opening exposing the upper semiconductor layer; a first contact layer contacting the upper semiconductor layer through the opening of the first insulation layer; a second contact layer formed between the mesa and the first insulation layer and contacting the lower semiconductor layer; a first electrode pad and a second electrode pad disposed under the first contact layer and electrically connected to the first contact layer and second contact layer, respectively; and a second insulation layer located between the first contact layer and the first and second electrode pads, wherein the active layer emits uv light having a wavelength of 405 nm or less.
Seoul Viosys Co., Ltd.

Light emitting device and fabricating the same

A method of fabricating a light-emitting device including the steps of forming a first resin including a phosphor on a light-emitting diode chip mounted on a package body, measuring color coordinates of light emitted by combination of the light-emitting diode chip and the phosphor, correcting the color coordinates by forming a second resin on the first resin, and curing the first resin and the second resin after correcting the color coordinates, in which the first resin is not fully cured before measuring and correcting the color coordinates.. .
Seoul Semiconductor Co., Ltd.

Diode structures with controlled injection efficiency for fast switching

This invention discloses a semiconductor device disposed in a semiconductor substrate. The semiconductor device includes a first semiconductor layer of a first conductivity type on a first major surface.
Alpha And Omega Semiconductor Incorporated

Photosensor and display device having the same

A photosensor includes a first light-shielding layer provided on an insulating surface; a first insulating layer covering the first light-shielding layer; a semiconductor layer provided on the first insulating layer, the semiconductor layer being connected to a first electrode and a second electrode, and the semiconductor layer configuring a diode; a second insulating layer covering the semiconductor layer; an opening provided in the second insulating layer so as to surround the semiconductor layer as viewed from a planar direction and the opening reaching at least the first insulating layer; and a second light-shielding layer covering at least a side wall of the opening.. .
Japan Display Inc.

Image pickup element, image pickup apparatus, and manufacturing image pickup element

In an image pickup element, an interval between adjacent light receiving elements on a light receiving surface is changed depending on a position on the light receiving surface. Further, the image pickup element is manufactured by a method of manufacturing the image pickup element including layering photodiodes by repeatedly performing a silicon epitaxial process and an ion injection process.

Image sensors including conductive pixel separation structures

An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench.
Samsung Electronics Co., Ltd.

Method for manufacturing semiconductor device, and semiconductor device

Provided is a semiconductor device with improved performance. In a method for manufacturing a semiconductor device, after forming a gate electrode of a transfer transistor over a p-type well, a photodiode is formed in one part of the p-type well positioned on one side with respect to the gate electrode.
Renesas Electronics Corporation

Image sensor contact enhancement

A method of image sensor fabrication includes providing a plurality of photodiodes disposed in a semiconductor material and a floating diffusion disposed in the semiconductor material. The method also includes providing peripheral circuitry disposed in the semiconductor material, including a first electrical contact to the semiconductor material, and forming a transfer gate disposed to transfer image charge from the photodiode to the floating diffusion.
Omnivision Technologies, Inc.

Solid-state imaging device, manufacturing the same, and electronic apparatus

The present disclosure relates to a solid-state imaging device that can achieve a higher image quality by reducing image quality degradation, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes: a semiconductor substrate having photodiodes formed for respective pixels, the photodiodes performing photoelectric conversion; color filters that pass light in the colors corresponding to the respective pixels, the color filters being stacked on the light incident surface side of the semiconductor substrate; and a light shielding film provided between the color filters of the respective pixels, the light shielding film being formed by stacking a first light shielding film and a second light shielding film, the first light shielding film and the second light shielding film being formed with two different materials from each other.
Sony Semiconductor Solutions Corporation

Co-fabrication of vertical diodes and fin field effect transistors on the same substrate

A method of forming a vertical finfet and vertical diode device on the same substrate, including forming a channel layer stack on a heavily doped layer; forming fin trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the fin trenches to form a dummy layer liner; forming a vertical fin in the fin trenches with the dummy layer liner; forming diode trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the diode trenches to form a dummy layer liner; forming a first semiconductor segment in a lower portion of the diode trenches with the dummy layer liner; and forming a second semiconductor segment in an upper portion of the diode trenches with the first semiconductor segment, where the second semiconductor segment is formed on the first semiconductor segment to form a p-n junction.. .
International Business Machines Corporation

Co-fabrication of vertical diodes and fin field effect transistors on the same substrate

A method of forming a vertical finfet and vertical diode device on the same substrate, including forming a channel layer stack on a heavily doped layer; forming fin trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the fin trenches to form a dummy layer liner; forming a vertical fin in the fin trenches with the dummy layer liner; forming diode trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the diode trenches to form a dummy layer liner; forming a first semiconductor segment in a lower portion of the diode trenches with the dummy layer liner; and forming a second semiconductor segment in an upper portion of the diode trenches with the first semiconductor segment, where the second semiconductor segment is formed on the first semiconductor segment to form a p-n junction.. .
International Business Machines Corporation

Co-fabrication of vertical diodes and fin field effect transistors on the same substrate

A method of forming a vertical finfet and vertical diode device on the same substrate, including forming a channel layer stack on a heavily doped layer; forming fin trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the fin trenches to form a dummy layer liner; forming a vertical fin in the fin trenches with the dummy layer liner; forming diode trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the diode trenches to form a dummy layer liner; forming a first semiconductor segment in a lower portion of the diode trenches with the dummy layer liner; and forming a second semiconductor segment in an upper portion of the diode trenches with the first semiconductor segment, where the second semiconductor segment is formed on the first semiconductor segment to form a p-n junction.. .
International Business Machines Corporation

Devices with an embedded zener diode

In one aspect, a silicon-controlled rectifier (scr) includes a zener diode embedded in the scr. In another aspect, a laterally diffused metal oxide semiconductor (ldmos) includes a zener diode embedded in the ldmos.
Allegro Microsystems, Llc

Electrostatic discharge protection device having an adjustable triggering threshold

An electrostatic discharge protection device includes first and second diodes series-connected between first and second connection terminals. A third connection terminal is coupled to a junction of the first and second diodes.
Stmicroelectronics (tours) Sas

Schottky-cmos asynchronous logic cells

Integrated circuits described herein implement an x-input logic gate. The integrated circuit includes a plurality of schottky diodes that includes x schottky diodes and a plurality of source-follower transistors that includes x source-follower transistors.
Schottky Lsi, Inc.

Display apparatus and manufacturing method thereof

A display apparatus including a first substrate including a plurality of light emitting diodes regularly disposed thereon, a second substrate including a thin-film transistor (tft) panel part including a plurality of tfts configured to drive the light emitting diodes, and a third substrate including a light converter configured to convert light emitted from the first substrate, in which the first substrate and the second substrate are coupled to face each other, the light emitting diodes are electrically connected to the tfts, respectively, the first substrate and the third substrate are coupled to face each other, and light emitted from the light emitting diodes is converted into at least one of blue light, green light, and red light through the light converter.. .
Seoul Semiconductor Co., Ltd.

Light-emitting device and manufacturing the same

A method of manufacturing a light-emitting device includes steps of: preparing at least one substrate having a plurality of through holes; providing an electric wire on a rear surface side of the substrate so that a plurality of portions of the electric wire communicates with a front surface side of the substrate at the plurality of through holes of the substrate; and respectively mounting a plurality of light-emitting diodes to the respective portions of the electric wire that communicate with the front surface side of the substrate.. .
Nichia Corporation

Semiconductor device and an electronic device

A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a sealing body, and signal terminals protrude from a second sides of the sealing body.
Renesas Electronics Corporation

Semiconductor device and semiconductor apparatus

A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode..
Renesas Electronics Corporation

Organic light emitting display panel, driving method thereof and organic light emitting display apparatus

The present application discloses an organic light emitting display panel, a driving method thereof and an organic light emitting display apparatus. The organic light emitting display panel comprises: a pixel array, comprising pixel regions in m rows and n columns; a plurality of pixel driving circuits each comprising a light emitting diode and a driving transistor for driving the light emitting diode, the light emitting diode being arranged in one of the pixel regions; and a plurality of pixel compensation circuits, each configured to provide a compensated light emitting control signal for a gate of the driving transistor to correct brightness of the light emitting diode in one of the plurality of pixel driving circuits.
Shanghai Tianma Am-oled Co., Ltd.

Micro led display pixel architecture

A light emitting diode (led) display is described. The led display includes a plurality of pixel circuits, each including an led and a non-volatile memory cell to adjust current to the led..
Intel Corporation

Organic light emitting diode display having photodiodes

Systems, methods, and devices are provided in which photodetectors disposed throughout a display are used to control the display brightness. The photodetectors are to be used for ambient light sensing, proximity sensing, or to compensate for aging oleds.
Apple Inc.

Wear compensation for a display

Techniques for implementing aging compensation for a display are described. An example of an electronic device includes a display with a plurality of pixels, each pixel including one or more light emitting diodes (leds).
Intel Corporation

Organic light-emitting diode display and driving the same

An oled display includes: a plurality of pixel lines each connected to a plurality of pixels, including at least two adjacent pixel lines, each pixel including: a driving thin film transistor (tft), a first switching tft, a second switching tft, and an emission control tft connected to the driving tft, a first scan driver controlling a plurality of first switching tfts for the two pixel lines, a second scan driver controlling a plurality of second switching tfts for the two pixel lines, and a third scan driver configured so all of a plurality of emission control tfts for the two pixel lines: are turned on in a programming period, maintain a turn-on state for a particular time of an emission period, and can adjust an on-time duty of the emission period after the particular time.. .
Lg Display Co., Ltd.

Compositions and image making media

The invention relates to compositions for forming an aesthetic work of art, design or architecture made as, from, with and/or on an image support medium. Compositions of the image support mediums generally include one or more light-emitting devices, one or more non-light-emissive devices capable of change, a form that is partially or entirely transparent or translucent, or a combination of these.

System and displaying content on disposable packaging

A system and method for displaying content on disposable packaging includes a display board, such as a light emitting diode display board, embedded within or on the product package. While the product package will include various electronic components, the packaging itself is without an integrated power source sufficient to provide power throughout the life of the product package.
International Culinary Chefsbest, Llc

Drive scheme for ultrasonic transducer pixel readout

This disclosure provides some implementations of systems, methods and apparatus associated with a drive scheme for ultrasonic transducer pixel readout. In some implementations, a piezoelectric ultrasonic transducer has a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes.
Qualcomm Incorporated

Bandgap reference circuit with capacitive bias

An apparatus is described having a reference voltage circuit. The reference voltage circuit includes a diode to receive first and second currents having first and second respective current densities, where, the first and second current densities are different and determined by circuitry that precisely controls the respective amount of time the first and second currents flow into the diode.
Intel Corporation

Passive optical diode on semiconductor substrate

A method of fabricating an optical device includes forming on a semiconductor substrate a first optical cavity, a second optical cavity, a first light guide and a second light guide. The first light guide has an input, and is optically coupled to the first optical cavity by a first coupling strength.
Purdue Research Foundation

Organic light emitting diode device

An organic light emitting diode device includes an organic light emitting display panel and a circular polarizing plate disposed on the organic light emitting display panel and including a polarizer and a compensation film, where a retardation of the compensation film in a first direction is determined based on a retardation of the organic light emitting display panel in the first direction.. .
Samsung Electronics Co., Ltd.

Apparatus with device with fault detection protection

A device such as a laser diode is provided with a monitoring arrangement. The monitoring arrangement has voltage to current convertors arranged to provide respectively currents which are proportional to the respective voltages on an anode and on a cathode of the laser diode.
Stmicroelectronics (research & Development) Limited

Circuits and methods for artifact elimination

Disclosed are apparatus and methods that provide the ability to electrical stimulate a physical system, and actively eliminate interference with signal acquisition (artifacts) that arises from the stimulation. The technique implemented in the circuits and methods for eliminating interference connects a discharge path to a physical interface to the system to remove charge that is built-up during stimulation.
Georgia Tech Research Corporation

Multifunctional infrared module

A multifunctional infrared (ir) module is configured for multiple ir applications without an additional microcontroller to be integrated into a computing device and is able to utilize voltage control instead of current control. The multifunctional ir module includes an ir light emitting diode (led), and an ir receiver (e.g., photodiode or phototransistor).
Peel Technologies, Inc.

Light emitting diode lamps with heat-dispersing construction and mechanism

An led lamp with a built-in means of dissipating working heat includes top and bottom covers, a connector between the two, and an integrated device which is received by the top and bottom covers. The integrated device includes a radiator, a control circuit, and a plurality of led chips.
Shunsin Technology (zhong Shan) Limited

Led substrate and light illuminating apparatus with the same

Provided is a light emitting diode (led) substrate. The led substrate includes a substrate of a rectangular shape having sides in a first direction and a second direction, a plurality of led devices placed on a surface of the substrate, and a plurality of conducting member which electrically connects the plurality of led devices on the surface of the substrate and forms 2n circuits independent from each other in the first direction.
Hoya Candeo Optronics Corporation

Projection light source structure with bat-wing candle power distribution

A projection light source structure having the bat-wing candle power distribution is described. The projection light source structure includes a light-emitting diode, a prism sheet and/or a reflection structure.
Arex(twn) International Co., Ltd.

Light emitting diode based daylight running light

Light emitting diode (led) based daylight running light (drl) comprising a carrier, comprising a polymer composition comprising polyethylene terephthalate and glass fibers, the surface of the carrier comprises conductor tracks for mounting one or more led's.. .
Dsm Ip Assets B.v.

Illuminated rotating dance pole

A dance pole effective to bear the weight of a dancer has a rigid inner core and a transparent outer tube circumscribing the rigid inner core. A first portion of an outer surface of the rigid inner core contacts an inner wall of the transparent outer tube and a second portion of the outer surface is recessed from the inner wall.
Flickerpole Llc

Battery protection and zero-volt battery recovery system for an implantable medical device

Circuitry useable to protect and reliably charge a rechargeable battery, even from a zero-volt state, is disclosed, and is particularly useful when employed in an implantable medical device. The circuit includes two charging paths, a first path for trickle charging the battery at a relatively low current when the battery voltage is below a threshold, and a second path for charging the battery at relatively higher currents that the battery voltage is above a certain threshold.
Boston Scientific Neuromodulation Corporation

Countertop decontaminating device

The present invention disinfects countertop surfaces using high intensity ultraviolet energy causing photolysis. The light is directed to the working area of an office countertop or the countertop used in food preparation such as in a residential or commercial kitchen.

Optical arrangement for power-efficient, low noise photoplethysmographic sensor module

According to one embodiment, a power-efficient, low noise photoplethysmographic (ppg) sensor module is provided herein comprising at least one light emitting diode (led) and at least one photodetector. The led is generally configured for emitting light, and is positioned on the ppg sensor module for transmitting the emitted light into biological tissue.
Silicon Laboratories Inc.

Multi-section portable electronic torch

An electronic torch is disclosed which includes at least one light emitting diode disposed in each one of a plurality of sections of the electronic torch. In one embodiment, each one of the plurality of sections of the electronic torch is independently selectable to activate the at least one light emitting diode disposed in each one of the plurality of sections of the electronic torch.
Zyntony, Inc.

Led driving circuit and led lighting device

A light emitting diode (led) driving circuit including a dimmer modulating an ac voltage input depending on a selected dimming level, a rectifying unit performing a full-wave rectification for an ac voltage to generate and output a driving voltage, first and second dimming level detecting units receiving the driving voltage of the rectifying unit to detect the selected dimming level, and outputting first and second dimming level signals depending on the detected dimming level, a first driving module controlling a first led light emitting unit using the first dimming level signal of the first dimming level detecting unit, and a second driving module controlling a second led light emitting unit using the second dimming level signal of the second dimming level detecting unit, in which the first and second driving modules control the first and second led light emitting units, respectively.. .
Seoul Semiconductor Co., Ltd.

Optoelectronic circuit comprising light-emitting diodes

The invention relates to an optoelectronic circuit (20) intended to receive, between a first node (a1) and a second node (a2), a variable voltage (vrect), the optoelectronic circuit including: a plurality of light-emitting diodes (di) series-assembled between the first node and a third node; a first current limitation/regulation circuit (14) assembled between the third node and the second node; a switching circuit (16) coupling the third node to at least certain light-emitting diodes of the plurality of light-emitting diodes; a capacitor (cap) including first and second plates; a first diode (d0d) having its cathode connected to the second plate and having its anode coupled to the second node; and a second diode (d0c) having its anode connected to the second plate and having its cathode coupled to the third node or to a second current limitation/regulation circuit (38).. .
Easii Ic

Led driver circuits

In some implementations, a circuit includes a first diode and a second diode that are coupled in series. The device is configured to couple an alternating current (ac) power source to a first node between the first diode and the second diode.
New Energies & Alternative Technologies, Inc.

Single-stage multi-string led driver with dimming

A driver circuit for light emitting diodes (leds) and a driving method for leds. The driver circuit comprises a single stage dc-dc converter with multiple output channels, the converter comprising one set of switches on a primary side of the converter, a rectifier and voltage multiplier component at the secondary side; and a dimming control component configured to control the respective switches on the primary side of the converter for controlling an output current in the multiple output channels..
National University Of Singapore

Optoelectronic circuit comprising light-emitting diodes

The invention relates to an optoelectronic circuit intended to receive, between a first node and a second node, a variable voltage, the optoelectronic circuit including: a plurality of light-emitting diodes series-assembled between the first node and a third node; a first current limitation/regulation circuit assembled between the third node and the second node; a switching circuit coupling the third node to at least certain light-emitting diodes of the plurality of light-emitting diodes; a capacitor including first and second plates; a first diode having its cathode connected to the second plate and having its anode coupled to the second node; and a second diode having its anode connected to the second plate and having its cathode coupled to the third node or to a second current limitation/regulation circuit.. .
Easii Ic

Imaging device, camera system, and imaging method

In order to provide an imaging device suitable for suppressing a reduction of the frame rate without deteriorating the image quality, a sensor includes two photodiodes for receiving incident light through a microlens, a first transfer transistor that transfers the output electric charges of the first photodiode when a first transfer control signal becomes active, a second transfer transistor that transfers the output electric charges of the second photodiode when a second transfer control signal becomes active, a first output signal line that transmits a first pixel signal depending on the transferred electric charges by the first transfer transistor, and a second output signal line that transmits a second pixel signal depending on the transferred electric charges by the second transfer transistor.. .
Renesas Electronics Corporation

Current-voltage converter, photoelectric conversion device, and camera

A current-voltage converter, comprising an operational amplifier having an input terminal and an output terminal, a first resistor portion connected to the input terminal, and a second resistor portion provided between the input and output terminals, the input terminal and the first and second resistor portions being connected to each other, the first resistor portion being connected to a current source on a side opposite to the input terminal, the second resistor portion including a diode, the first resistor portion having a first resistance value when a current of a first current amount is supplied to the first resistor portion, and having a second resistance value smaller than the first resistance value when a current of a second current amount larger than the first current amount is supplied to the first resistor portion.. .
Canon Kabushiki Kaisha

Solid-state image sensor, imaging device, and electronic device

The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching fd conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light.
Sony Corporation

High dynamic range and global shutter image sensor pixels having charge overflow signal detecting structures

An image sensor may include an array of image sensor pixels. Each pixel may have a photodiode, a charge storage region, and a charge overflow circuit.
Semiconductor Components Industries, Llc

Embedded active matrix organic light emitting diode (amoled) fingerprint sensor

Various embodiments provide a handheld computing device, such as a cellular phone, that includes a fingerprint sensor embedded in the device's display active area. The fingerprint sensor is composed of a series of pin diodes that are configured to operate in a photo-receiving mode.
Motorola Mobility Llc

Systems, devices, and methods for photonic to radio frequency downconversion

A system, method, and device for rf upconversion. The system can include a laser, two eams, a photonic filter, a photonic service filter, two photodiodes, and a mixer.
Lockheed Martin Corporation

Optical module

Some embodiments of the present application provide an optical module, including: a master control chip, a laser transmitter, and a laser receiver; the laser transmitter and the laser receiver being connected to the master control chip, respectively; where the laser receiver includes: a pin photodiode, a trans-impedance amplifier with a transimpedance of no less than 43k ohms, a lens, and a shell; the pin photodiode being electrically connected to the trans-impedance amplifier; the pin photodiode, the trans-impedance amplifier and the lens being encapsulated within the shell in a manner of transistor out-line; and the lens being coated with an antireflection film.. .
Hisense International Co., Ltd.

Solar power manufacturing the same

A solar power system and a method for manufacturing the same are provided. The solar power system includes at least one solar power module and a bypass diode module.
Eterbright Solar Corporation

Power module

A power module includes an inverter circuit and a pair of conductors that sandwich the inverter circuit. The inverter circuit includes a positive bus bar, a negative bus bar, output bus bars, and element pairs.
Toyota Jidosha Kabushiki Kaisha

Charge pump effect compensation for high frequency isolation transformer in lighting device power supplies

An apparatus (400a, 400b, 400c, 400d, 500a, 500b, 800) supplies power to an output thereof. The apparatus includes: an isolation transformer (110) and a rectifier (120).
Philips Lighting Holding B.v.

Sealed making the same

Disclosed herein are sealed devices comprising a first glass substrate; a second glass substrate; an optional sealing layer between the first and second glass substrates; and at least one seal between the first and second glass substrates. The sealed devices may comprise at least one cavity containing at least one component chosen from laser diodes, light emitting diodes, organic light emitting diodes, quantum dots, and combinations thereof.
Corning Incorporated

Laser system and tuning the output power of the laser system

A power control method for a laser system comprising laser diodes arranged in diode banks is provided. Each diode bank comprises at least one of the laser diodes and has a maximum power.
Amada Holdings Company Ltd.

Semiconductor laser oscillator

A semiconductor laser oscillator includes a diode unit configured from a plurality of banks, in which one bank is configured from a plurality of laser diodes connected in series. The diode unit includes a wavelength locking mechanism for locking to a plurality of wavelengths.
Lumentum Operations Llc

Organic light-emitting diode element and display device

An organic light-emitting diode (oled) element and a display device are provided. The oled element includes a base substrate and an anode, an organic functional layer and a cathode sequentially stacked on the base substrate.
Hefei Xinsheng Optoelectronics Technology Co., Ltd

Organic light-emitting diode including an electron transport layer stack comprising different lithium compounds and elemental metal

The present invention relates to a an organic light-emitting diode (oled, 100) comprising at least one emission layer (150), and an electron transport layer stack (160) of at least two electron transport layers, wherein a first electron transport layer (161, 162) and a second electron transport layer (162, 161) comprises at least one matrix compound and in addition, —the at least first electron transport layer comprises a lithium halide or a lithium organic complex; and the at least second electron transport layer comprises an elemental metal selected from the group of lithium, magnesium and/or ytterbium; or —the at least first electron transport layer comprises an elemental metal selected from the group of lithium, magnesium and/or ytterbium; and the at least second electron transport layer comprises a lithium halide or a lithium organic complex; wherein the electron transport layer or layers comprising a lithium halide or a lithium organic complex is free of an elemental metal, and the electron transport layer or layers that comprises an elemental metal is free of a metal salt and/or a metal organic complex.. .
Novaled Gmbh

Organic light emitting diode substrate and manufacturing the same

The present disclosure discloses an organic light emitting diode substrate and a method for manufacturing the same. In one embodiment of the present disclosure, an organic light emitting diode substrate includes a display region in which an organic film layer that is formed by curing an ink layer is provided, and a border region located outside the display region and including an exposed area in which no organic film layer is provided.
Boe Technology Group Co., Ltd.

Package support, fabrication method and led package

A light-emitting diode (led) package includes a substrate with upper and lower surfaces, including: a metal block; an electrically insulating region surrounding at least a portion of the metal block; an led chip mounted on the substrate and in electrical communication with the metal block; and an encapsulant covering at least an upper surface of the led chip. A light-emitting system includes a plurality of light-emitting diode (led) chips; and a package support for the plurality of led chips..
Xiamen Sanan Optoelectronics Technology Co., Ltd.

Light emitting diode apparatus and manufacturing method thereof

An led apparatus is provided. The led apparatus includes a plurality of substrate layers, each substrate layer corresponding to one of a plurality of sub-pixels of a pixel; a heat sink plate provided on a first side of each substrate layer, the heat sink plate including a patterned area provided between adjacent substrate layers of the plurality of substrates layers; a fluorescence provided on the heat sink plate overlapping at least a portion of one of the plurality of substrate layers; and a plurality of light emitting diodes, each light emitting diode formed on a second side opposite to the first side of each substrate layer..
Samsung Electronics Co., Ltd.

Light emitting diode and manufacturing method thereof

A light emitting diode includes a support substrate; a light emitting structure including a second semiconductor layer, an active layer, and a first semiconductor layer; at least one groove formed on the lower surface of the light emitting structure; a second electrode located on at least the lower surface of the second semiconductor layer, and electrically connected with the second semiconductor layer; an insulating layer partially covering the second electrode and the lower surface of the light emitting structure, and including at least one opening corresponding to the at least one groove; and a first electrode electrically connected to the first semiconductor layer exposed to the at least one groove, and at least partially covering the insulating layer, wherein the second electrode includes a second contact layer including an ohmic contact layer, and the ohmic contact layer is disposed in the shape of a plurality of islands.. .
Seoul Viosys Co., Ltd.

Unguarded schottky barrier diodes

One embodiment of the disclosure relates to an unguarded schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region.
Texas Instruments Incorporated

Semiconductor device

A schottky barrier diode (semiconductor device) includes at least: a semiconductor substrate of an n type (first conductivity type); a semiconductor portion (first portion) of a p type (second conductivity type) opposite to the n type, the semiconductor portion being formed on a part of a one main surface side of the semiconductor substrate; a metal portion (second portion) with conductivity formed on the one main surface of the semiconductor substrate so as to be electrically connected to a part of the p type semiconductor portion; and a high resistance portion (third portion) formed so as to be electrically connected to a part of the p type semiconductor portion and to be in contact with a side surface and a bottom surface connected thereto of the p type semiconductor portion.. .
Shindengen Electric Manufacturing Co., Ltd.

Diode

A diode includes an n type semiconductor layer including an n type cathode layer and an n type drift layer that has an impurity concentration lower than the n type cathode layer and that is disposed on the n type cathode layer, a p type anode layer disposed at a surface part of the n type drift layer, a p type hole implantation layer selectively disposed at the n type cathode layer, an anode electrode electrically connected to the p type anode layer, and a cathode electrode electrically connected to the n type cathode layer and to the p type hole implantation layer, and the p type hole implantation layer has a diameter of 20 μm or more.. .
Rohm Co., Ltd.

Schottky barrier diode and manufacturing method thereof

A technique stabilizing properties of sbds is provided. An sbd is provided with a p-type contact region in contact with an anode electrode, and an n-type drift region in schottky contact with the anode electrode.
Denso Corporation

Organic light-emitting display device

A display device includes a switching transistor, a driving transistor, a storage capacitor connected to the switching and driving transistors, and an organic light-emitting diode connected to the driving transistor. The driving transistor is connected to the switching transistor.
Samsung Display Co., Ltd.

Pixel element structure, array structure and display device

A pixel element structure is disclosed. The pixel element structure includes first, second, and third sub-pixel elements, each including a light-emitting region.
Tianma Micro-electronics Co., Ltd.

Organic light emitting display device

An organic light emitting diode (oled) display device includes a substrate, reflection structure, and a sub-pixel structure. The substrate includes a plurality of sub-pixel regions and a reflection region surrounding the sub-pixel regions.
Samsung Display Co., Ltd

Image sensor and fabricating the same

A method for fabricating an image sensor in accordance with an embodiment of the inventive concepts may include forming first and second photodiodes within a substrate, forming first and second gate electrodes over the substrate, the first gate electrode vertically partially overlapping the first photodiode and the second gate electrode vertically partially overlapping the second photodiode, forming an impurity injection region comprising first and second type impurities between the first and the second gate electrodes, and performing an annealing process to form a floating diffusion region comprising the first type impurities and a channel region comprising the second type impurities. The channel region surrounds lateral surfaces and a bottom surface of the floating diffusion region..
Sk Hynix Inc.

Large area diode co-integrated with vertical field-effect-transistors

An integrated circuit is provided having a semiconductor structure, the semiconductor structure including a vertical field-effect transistor; and a diode wherein the vertical field-effect transistor and the diode are co-integrated in the semiconductor structure.. .
International Business Machines Corporation

Sensor device

In conventional sensor devices, it has been difficult to achieve both emc resistance and esd resistance, which are required at the output terminals of an automobile sensor device. A sensor device 1 of the present embodiment comprises: a power supply terminal 2 that supplies power; a ground terminal 3; a sensor element 4, the electrical characteristics of which change in accordance with a physical quantity; a signal processing integrated circuit 5 that processes an output signal output from the sensor element 4; and an output terminal that outputs the output signal processed by the signal processing integrated circuit 5.
Hitachi Automotive Systems, Ltd.

Semiconductor power device having shielded gate structure and esd clamp diode manufactured with less mask process

A semiconductor power device having shielded gate structure in an active area and having esd clamp diode with two poly-silicon layer process is disclosed, wherein: the shielded gate structure comprises a first poly-silicon layer to serve as a shielded electrode and a second poly-silicon layer to serve as a gate electrode, and the esd clamp diode formed between two protruding electrodes is also formed by the first poly-silicon layer. A mask specially used to define the esd clamp diode portion is saved..
Force Mos Technology Co., Ltd

Led chip mounting apparatus and manufacturing display apparatus by using the led chip mounting apparatus

A light emitting diode chip mounting apparatus includes a guide plate including a first surface and a second surface opposite to the first surface, the second surface including at least one first tunnel that extends in a first direction, wherein the first tunnel defines a concave portion and the second surface includes a convex portion adjacent to the concave portion. The first tunnel is sized to accommodate a light emitting diode chip flowing therethrough..
Samsung Display Co., Ltd.

Array substrate of organic light-emitting diodes and packaging the same

An array substrate of organic light-emitting diodes and a method for fabricating the same are provided to narrow an edge frame of product device of organic light-emitting diodes, to shorten the package process time, and to improve the substrate utilization and the production efficiency. The array substrate of organic light-emitting diodes includes a plurality of display panels disposed in an array of rows and columns, wherein at least two adjacent display panels are connected through a frame adhesive, and there is no cutting headroom between at least one side of the at least two adjacent display panels..
Tianma Micro-electronics Co., Ltd.

Temperature-based control of inductor demagnetization

An integrated circuit for demagnetizing an inductive load includes a first switch to control current supplied by a voltage supply to the inductive load. A zener diode includes an anode connected to a control terminal of the first switch and a cathode connected to the voltage supply.
Maxim Integrated Products, Inc.

Pixel and an organic light-emitting display apparatus

A pixel includes a storage capacitor connected between a first power line and a first node, a first transistor configured to control current flowing from a second node to a third node in response to a voltage of the first node, a second transistor configured to apply a data signal to the second node in response to a scan signal, a third transistor configured to connect the first node and the third node in response to the scan signal, a fourth transistor configured to connect the first power line and the second node in response to a control signal, and an organic light-emitting diode connected between the third node and a second power line. A level of a voltage applied to the second power line during an initialization period is greater than the level of the voltage applied to the second power line during an emission period..
Samsung Diaplay Co., Ltd.

Power supply circuit for powering organic light emitting diode and display panel

Embodiments of the disclosure provide a power supply circuit for powering an oled panel and a display panel, for mitigating or solving the problem of a relatively high power consumption and a decreased efficiency with the dc-dc conversion circuit when the current outputted by the dc-dc conversion circuit to the oled panel is relatively small due to the fact that the voltage outputted by the dc-dc conversion circuit is a constant value while the current outputted by the dc-dc conversion circuit to the oled panel may vary with the load. The power supply circuit for powering the oled panel reduces the voltage outputted by the dc-dc conversion circuit in the power supply circuit based on a target current.
Ordos Yuansheng Optoelectronics Co., Ltd.

Light assembly for a projector

Disclosed is a light assembly configured to be installed in a movie projector. The light assembly includes an adaptor configured to mechanically couple with a bulb mount of the movie theatre projector.

Photonic elements driven by common electrical driver

A hybrid electronic optical chip has a first photonic element with which a first diode is associated, a second photonic element with which a second diode is associated and a common electrical driver connected to the first and second diodes by a common electrical connection with opposite polarity. The electrical driver generates a common electrical drive signal divided in time into first and second drive signal components for independently driving the first and second photonic elements through the common electrical connection..
Huawei Technologies Canada Co., Ltd.

Turbidimeter

Various turbidimeters are described that can detect light directly in a substantially circular, e.g., encompassing, manner such that an increased amount of scattered light from a sample vial may be detected by a light detector, e.g., a photodiode or photodiode array. In an embodiment, a substantially circular photodiode array is provided to directly detect scattered light in an arc about the sample vial.
Hach Company

Led disposed in a body including a socket

A device according to embodiments of the invention includes a light emitting diode (led) mounted on an electrically conducting substrate. A lens is disposed over the led.
Koninklijke Philips N.v.

Variable voltage convert system with reduced bypass diode conduction

A vehicle powertrain includes a bypass diode and a controller. The bypass diode is configured to clamp an inverter dc terminal voltage to a battery voltage.
Ford Global Technologies, Llc

Systems and methods of communicating centrifuge status by led illuminator of centrifuge housing

A centrifuge includes light sources to provide different illumination states depending on the status of the centrifuge to communicate the status of the centrifuge. The light sources, when activated, project light in the centrifuge chamber and through the centrifuge lid.
The Drucker Company, Llc

Pose recovery of an ultrasound transducer

Pose of an ultrasound transducer is recovered. In one approach, inertial measurement units are positioned on the ultrasound transducer.
Siemens Medical Solutions Usa, Inc.

Smart light

Systems and methods are disclosed with one or more light emitting diodes (leds) with at least one optical transmitter and receiver optically coupled to an optical network over 1 mbps using at least one led with a first mode to communicate using infrared (ir) light and a second mode to communicate using broadband optical transmission; and a controller coupled to the leds, the controller communicating with the optical network using the optical transmitter and receiver.. .

Apparatus for controlling light emitting diode module having light intensity compensation function and lighting system including the same

An apparatus for controlling a light emitting diode (led) module having a light intensity compensation function includes a light intensity sensor measuring intensity of light irradiated by the led module depending on a current value, based on a predetermined light intensity signal; a compensation signal generating unit generating a compensated light intensity signal to compensate for an error between measured light intensity and predetermined light intensity; and a pulse width modulation signal generating unit allowing the led module to irradiate light having uniform brightness in such a manner that a pulse width modulation signal depending on the compensated light intensity signal is applied to an led driver, in an apparatus for controlling led lighting including an led driver.. .
Uver Corporation Ltd.

Projector and projecting an image pixel by pixel

A method and a projector for projecting an image pixel by pixel includes a control unit controlling a light diode device for emitting visible light, pixel by pixel, in accordance with the image to be projected and controlling an infrared diode device for emitting infrared radiation pixel by pixel based on the image to be projected and on a back radiation model, in such a way that a setpoint back radiation intensity measuring signal to be expected pixel by pixel for the actual back radiation intensity measuring signal has a predetermined value for predetermined pixels; and a radiation intensity detection device detecting pixel by pixel a back radiation intensity of reflected visible light and reflected infrared radiation and generating pixel by pixel an actual back radiation intensity measuring signal based on the detected back radiation intensities.. .
Robert Bosch Gmbh

Phase-detection auto-focus pixel array and associated imaging system

A phase-detection auto-focus (pdaf) pixel array includes a first pixel and a second pixel. The first pixel, located at a first distance from a center of the pdaf pixel array, includes a first inner photodiode and a first outer photodiode with respect to the center.
Omnivision Technologies, Inc.

Display circuit and control method therefor

A display circuit and a control method therefor are shown. The display circuit includes: a lamp bead array, a column-oriented drive switch array, a row-oriented drive switch array and a common-anode discharge control circuit, wherein one end of the common-anode discharge control circuit is connected to second ends of lamp beads, in a row direction, in the lamp bead array, and the other end of the common-anode discharge control circuit is grounded; the common-anode discharge control circuit includes a constant current source, a diode and a resistor; a first end of the diode is connected to the second ends of the lamp beads, in the row direction, in the lamp bead array, a second end of the diode is connected to a first end of the constant current source, and the second end of the diode is connected to a first end of the resistor; and a second end of the resistor and a second end of the constant current source are connected to a power supply, and a grounded end of the constant current source is grounded..
Leyard Optoelectronic Co., Ltd.

Reading apparatus, reading method, and reading program

A reading apparatus that reads a sheet includes: a first light emitting diode (led) configured to emit light with a specific wavelength; a light emitting element including a second led configured to emit light with the specific wavelength and a phosphor configured to be excited by the light emitted from the second led; a line sensor configured to generate a reference signal according to a quantity of received light emitted from the first led and reflected off the sheet, and also generate an image signal according to a quantity of received light emitted from the light emitting element and reflected off the sheet; and a controller configured to generate an image representing the sheet from a differential result obtained by removing a component corresponding to the reference signal from the image signal.. .
Konica Minolta, Inc.

Electronic dispersion compensation methods and implementations using rlc filter synthesis

A method and apparatus for compensating optical dispersion over an optical fiber are provided in fiber optic communications to increase a transmission distance by overcoming the optical dispersion caused by wavelength changes of light sources and dispersion effects of a fiber. In one implementation, the present technology may be implemented in the form of a rlc passive microwave filter with no extra power consumption.
Oe Solutions America, Inc.

Power supplies having synchronous and asynchronous modes of operation

The present disclosure relates to power supplies and control methods for power supplies. Example power supplies include an output terminal, a transformer having a secondary winding including a first terminal and a second terminal, first and second diodes coupled between the output terminal and the first and second terminals, respectively, first and second switches coupled between the output terminal and the first and second terminals, respectively, and a controller coupled to the first switch and the second switch.
Emerson Network Power, Energy Systems, North America, Inc.

Module, and power conversion apparatus and motor using the module

A circuit element includes an upper switching device, a lower switching device, an upper diode device, and a lower diode device. An upper drain is connected to a first terminal connected to a positive electrode of a power supply, and an upper source is connected to a third terminal.
Rohm Co., Ltd.

A controlling a load

A method and apparatus for switching ac power to a lamp (or other load) via a two terminal switch device. The switch device comprises a first electrically controlled switch, such as a triac or relay, and a second electrically controlled resistance or switch connected in series to the first switch.
Switchbee Ltd.

Photovoltaic module

A photovoltaic module includes a solar cell module including multiple solar cells, and first and second conductive lines connected respectively to first and second solar cells among the solar cells, and a junction box attached to the solar cell module. The junction box includes a power conversion unit including a capacitor unit located between the first and second conductive lines, a converter unit to change the level of a dc voltage at opposite ends of the capacitor unit and to output the dc voltage, and a controller to control the converter unit.
Lg Electronics Inc.

Method and protecting a polarity sensitive load

Provided herein are improved apparatuses and methods for protecting polarity sensitive loads in dc power circuits that include a power source, a relay coupled to the power source, and a polarity sensitive load coupled to the relay. A diode can be coupled between the power source and the relay.
Littelfuse, Inc.

Nanolasers for solid-state lighting

Nanolaser arrays have certain advantages over leds and conventional laser diodes for solid-state lighting applications. In particular, nanocavities can channel spontaneous emission entirely into the lasing mode, so that all the emissions (spontaneous and stimulated) contribute to usable light output over a large range of current..
Sandia Corporation

Laser diode driving systems and methods

A laser diode driving method that reliably maintains average optical power and extinction ratio is disclosed. The present invention for laser driving uses a preloaded laser diode characteristic curve/table and/or mathematical equations to create a programmable bias and modulation current range.
Litrinium, Inc.

Spectrally multiplexing diode pump modules to improve brightness

A method of spectrally multiplexing diode pump modules to increase brightness includes generating one or more pump beams from respective diode lasers at a first wavelength in a diode laser package, generating one or more pump beams from respective diode lasers at a second wavelength different from the first wavelength in the diode laser package, wavelength combining at least one of the pump beams at the first wavelength with at least one of the pump beams at the second wavelength to form one or more combined pump beams, and receiving the combined pump beams in a pump fiber coupled to the diode laser package. Laser systems can include multi-wavelength pump modules and a gain fiber having a core actively doped so as to have an absorption spectrum corresponding to the multiple wavelength, the gain fiber situated to receive the pump light and to produce an output beam at an output wavelength..
Nlight, Inc.

Cognitive radio antenna assembly

The cognitive radio antenna assembly includes two boards, a main board that has an ultra-wideband antenna (uwb) and also serves as a ground plane for the reconfigurable antenna, and an elevated mimo board having two planar inverted-f antennas (pifas) that are reconfigurable to selectively operate on different frequency bands. Each pifa has a radiating patch having a slot bridged by pin diodes and dc blocking capacitors on opposite sides of the slot.
King Fahd University Of Petroleum And Minerals

Smart antenna and wireless device having the same

A smart antenna comprises a dipole antenna, a first reflector unit, a first diode, a first rf choke unit and a second rf choke unit. The dipole antenna has a first radiating portion and a second radiating portion.
Wistron Neweb Corporation

Method for forming display substrate for display panel

The present disclosure provides a method for fabricating a display substrate for a display panel. The method includes providing a flexible organic light-emitting diode (flexible oled) substrate with a thin-film transistor (tft) layer on the flexible oled substrate and a patterned adhesive layer on the tft layer, wherein the tft layer includes at least one testing area; providing a barrier film (bf) with a patterned laser barrier layer on a surface of the bf, the surface of the bf facing the tft layer; and bonding the bf onto the flexible oled substrate such that at least a portion of the patterned laser barrier corresponds to the at least one testing area.
Boe Technology Group Co., Ltd.

Organic light-emitting diodes with fluorescent and phosphorescent emitters

A light emitting device includes a first electrode, a hole transporting layer in contact with the first electrode, a second electrode, an electron transporting layer in contact with the second electrode; and an emissive layer between the hole transporting layer and the electron transporting layer. The emissive layer includes a phosphorescent emitter, a fluorescent emitter, and a host, and the phosphorescent emitter harvests electrogenerated excitons and transfers energy to the fluorescent emitter..
Arizona Board Of Regents On Behalf Of Arizona State University

Organic light-emitting diode materials

Described herein are molecules for use in organic light emitting diodes. Example molecules comprise at least one moiety a and at least one moiety d.
Massachusetts Institute Of Technology

Light emitting package having a guiding member guiding an optical member

A light emitting device package can include a base including a flat top surface; first and second electrical circuit layers on the flat top surface; a light emitting diode on a region of the flat top surface; an optical member to pass light; and a guiding member having a closed loop shape surrounding the region for guiding the optical member, in which the first and second electrical circuit layers respectively include first and second portions disposed between the flat top surface and a bottom surface of the guiding member, in which the first and second electrical circuit layers respectively include first and second extension portions that respectively extend from the first and second portions to locations outside of an outer edge of the guiding member in different directions.. .
Lg Innotek Co., Ltd.

Wafer level packaging of multiple light emitting diodes (leds) on a single carrier die

An led wafer includes led dies on an led substrate. The led wafer and a carrier wafer are joined.
Cree, Inc.

Light emitting diode die and manufacturing method thereof

An led die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order.
Advanced Optoelectronic Technology, Inc.

Light emitting diode

Disclosed is a light emitting diode using light of a short wavelength band. The light emitting diode includes a first conductivity type semiconductor layer having a front side and a back side, a second conductivity type semiconductor layer having a front side and a back side, an active layer formed between the back side of the first conductivity type semiconductor layer and the front side of the second conductivity type semiconductor layer, a first electrode electrically connected to the first conductivity type semiconductor layer, a second conductivity type reflective layer formed on the back side of the second conductivity type semiconductor layer, and a reflective part formed on the second conductivity type reflective layer to reflect light of a short wavelength band and light of a blue wavelength band and electrically connected to the second conductivity type semiconductor layer.
Lumens Co., Ltd.

Light emitting diode chip having temperature compensation of the wavelength

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region.
Osram Opto Semiconductors Gmbh

Deep ultraviolet light-emitting diode chip and package structure containing the same

A deep uv led chip includes a light-emitting unit, an electrode unit, an electron blocking layer, and an optical layer. The electron blocking layer is disposed between a multiple quantum well layer and a p-type aluminum gallium nitride layer of the light-emitting unit.
Lite-on Technology Corp.

Semiconductor device

An nchmosfet of a level-raising circuit is arranged in a high voltage junction termination region (hvjt), to be integrated with a parasitic diode formed by an n−-type diffusion region and a second p-type separation region. On a high potential side of the hvjt, a first field plate (fp) also acting as a drain electrode of the nchmosfet and a second fp also acting as a cathode electrode of a parasitic diode are arranged away from each other.
Fuji Electric Co., Ltd.

Trench-based diode and manufacturing such a diode

A semiconductor system including a planar anode contact, a planar cathode contact, and a volume of n-conductive semiconductor material, which has an anode-side end and a cathode-side end and extends between the anode contact and the cathode contact. A p-conductive area extends from the anode-side end of the volume toward the cathode-side end of the volume without reaching the cathode-side end.
Robert Bosch Gmbh

Method of producing semiconductor chips

A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.. .
Osram Opto Semiconductors Gmbh

Top emission device and organic light-emitting diode display device

An organic light-emitting diode display device includes a first substrate that includes a display region with a plurality of pixels and a non-display region in a periphery of the display region, a first electrode disposed on the first substrate, a second electrode opposed to the first electrode, an organic light-emitting layer disposed between the first electrode and the second electrode, and at least one light sensing member disposed on a rear surface of the first substrate that overlaps the display region.. .
Samsung Display Co., Ltd.

Polymer light-emitting diode structure, related display substrate and display apparatus, and fabrication method thereof

The present disclosure provides a polymer light-emitting diode (pled) structure. The structure includes a substrate; an anode layer on the substrate; and a pixel defining layer for defining a display region with a plurality of pixels.
Boe Technology Group Co., Ltd.

Organic light-emitting diode double-sided display panel, its manufacturing method and display device

The present disclosure provides an oled double-sided display panel, its manufacturing method and a display device. The oled double-sided display panel includes a base substrate, a plurality of oleds formed on the base substrate, and a light control unit arranged at at least one side of the oleds.
Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Organic light-emitting display and an electronic apparatus including the same

An organic light-emitting diode display includes a substrate including an active area and a dead area surrounding the active area. The organic light-emitting diode display further includes a first organic light-emitting device disposed in the active area.
Samsung Display Co., Ltd.

Pixel structure, organic light emitting display panel and fabricating the same, and display device

The present invention discloses a pixel structure, an organic light emitting display panel and a method for fabricating the same, and a display device. The pixel structure includes a plurality of organic light emitting diodes capable of emitting light of multiple colors and a plurality of light filtering portions provided at a light emitting side of the plurality of organic light emitting diodes, wherein each light filtering portion is provided in correspondence with each of a part of the organic light emitting diodes, such that light emitted from each of the part of the organic light emitting diodes passes through corresponding light filtering portion while light emitted from the remaining of the organic light emitting diodes does not pass through any light filtering portion, and the light filtering portions each process light having a color corresponding to the color of light emitted by corresponding organic light emitting diode..
Boe Technology Group Co., Ltd.

Semiconductor constructions, electronic systems, and methods of forming cross-point memory arrays

Some embodiments include vertical stacks of memory units, with individual memory units each having a memory element, a wordline, a bitline and at least one diode. The memory units may correspond to cross-point memory, and the diodes may correspond to band-gap engineered diodes containing two or more dielectric layers sandwiched between metal layers.
Micron Technology, Inc.

Stretchable display apparatus

A display apparatus includes a plurality of light-emitting diodes (“led”s); a stretchable substrate including a flat portion, and a plurality of protrusions protruding from the flat portion, where each of the protrusions has bent surfaces, and at least some of the light-emitting diodes are disposed on the protrusions; and a plurality of thin film transistors in the stretchable substrate and connected to the leds.. .
Samsung Display Co., Ltd.

Composite image sensor and device comprising the composite image sensor

One embodiment provides a device, including: a composite image sensor, including: a wiring layer that processes electrical signals; a first photodiode layer configured to convert a first light wave signal into an electrical signal; and a second photodiode layer configured to convert a second light wave signal into an electrical signal; wherein the first photodiode layer and the second photodiode layer are separated by a predetermined distance. Other aspects are described and claimed..
Lenovo (beijing) Limited

Front-side imager having a reduced dark current on a soi substrate

A front-side image sensor may include a substrate in a semiconductor material and an active layer in the semiconductor material. The front side image sensor may also include an array of photodiodes formed in the active layer and an insulating layer between the substrate and the active layer..
Stmicroelectronics Sa

Image sensor having improved dicing properties, manufacturing apparatus, and manufacturing the same

Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor..

Biased deep trench isolation

An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes.
Omnivision Technologies, Inc.

Double-base-connected bipolar transistors with passive components preventing accidental turn-on

The present application discloses new approaches to providing “passive-off” protection for a b-tran-like device. Even if the control circuitry is inactive, ac coupling uses transient voltage on the external terminals to prevent forward biasing an emitter junction.
Ideal Power Inc.

Semiconductor device

A semiconductor device includes a substrate, a plurality of transistors formed on a transistor region of the substrate, a plurality of diodes formed on a diode region of the substrate, the transistors and the diodes being arranged in a first direction, a first line formed over the substrate and extending between the transistors and the diodes, a plurality of first branch lines extending from the first line in the first direction to form a drain electrode of the transistors, and a plurality of second branch lines extending from the first line in the first direction to form an anode electrode of the diodes.. .
Renesas Electronics Corporation

High speed interface protection apparatus

The disclosed technology relates to electronics, and more particularly, to protection devices that protect circuits from transient electrical events such as electrical overstress/electrostatic discharge. A protection device includes a semiconductor substrate having formed therein at least two wells and a deep well underlying and contacting the at least two wells.
Analog Devices, Inc.

Display apparatus and a manufacturing the same

A display apparatus includes a flexible substrate, a light-emitting diode (led), and a partitioning wall pattern. The flexible substrate includes a concavo-convex portion.
Samsung Display Co., Ltd.

Method for manufacturing a wide bandgap junction barrier schottky diode

A method for manufacturing a wide bandgap junction harrier schottky diode (1) having an anode side (10) and a cathode side (15) is provided, wherein an (n±) doped cathode layer (2) is arranged on the cathode side (15), at least one p doped anode layer (3) is arranged on the anode side (10), an (n−) doped drift layer (4) is arranged between the cathode layer (2) and the at least one anode layer (3), which drift layer (4) extends to the anode side (10), wherein the following manufacturing steps are performed: a) providing an (n+) doped wide bandgap substrate(100), b) creating the drift layer (4) on the cathode layer (2), c) creating the at least one anode layer (3) on the drift layer (4), d) applying a first metal layer (5) on the anode side (10) on top of the drift layer (4) for forming a schottky contact (55), characterized in, that e) creating a second metal layer (6) on top of at least one anode layer (3), wherein after having created the first and the second metal layer (5, 6), a metal layer on top of the at least one anode layer (3) has a second thickness (64) and a metal layer on top of the drift layer (4) has a first thickness (54), wherein the second thickness (64) is smaller than the first thickness (54), 1) then performing a first heating step (63) at a first temperature, by which due the second thickness (64) being smaller than the first thickness (54) an ohmic contact (65) is formed at the interface between the second metal layer (6) and the at least one anode layer (3), wherein performing the first healing step (63) such that a temperature below the first metal layer (5) is kept below a temperature for forming an ohmic contact.. .
Abb Schweiz Ag

On-load voltage regulation tap switch for transformer and switch control method

Disclosed is an on-load voltage regulation tap switch for a transformer, comprising a main switch group, a switch contact protection branch and a switch control circuit, wherein the main switch group comprises a plurality of switch contacts, one end of the switch group is connected to a corresponding transformer winding tap, and the other end of the switch group is connected in parallel and is then connected to a power source; the switch contact protection branch is a series circuit formed by a plurality of groups of diodes and auxiliary switch contacts, and is respectively connected to both ends of a corresponding main switch in parallel; and the switch control circuit is composed of a power source, a single chip microcomputer and a peripheral circuit, and controls all of the main switches and auxiliary switches to act in a certain time sequence to complete the switching of the transformer windings.. .





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