|| List of recent Diode-related patents
| Designing photonic switching systems utilizing equalized drivers|
Designing a photonics switching system is provided. A photonic switch diode is designed to attain each performance metric in a plurality of performance metrics associated with a photonic switching system based on a weighted value corresponding to each of the plurality of performance metrics.
| Partially-blocked well implant to improve diode ideality with sige anode|
A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an n-well in a selected portion of a p-type substrate adjacent an anode region of the substrate.
| Nonvolatile semiconductor memory device and manufacturing method thereof|
In a nonvolatile semiconductor memory device, there is provided a technique which promotes microfabrication by reducing a thickness of the device as suppressing an off current of a polysilicon diode which is a selective element. A polysilicon layer to which an impurity is doped at low concentration and which becomes an electric-field relaxation layer of the polysilicon diode which is a selective element of a resistance variable memory is formed so as to be divided into two or more layers such as polysilicon layers.
| Integrated circuit including vertical diode|
An integrated circuit includes a substrate including isolation regions, a first conductive line formed in the substrate between isolation regions, and a vertical diode formed in the substrate. The integrated circuit includes a contact coupled to the vertical diode and a memory element coupled to the contact.
| Method for manufacturing light emitting diode|
A manufacturing method for an led (light emitting diode) includes following steps: providing a substrate; disposing a transitional layer on the substrate, the transitional layer comprising a planar area with a flat top surface and a patterned area with a rugged top surface; coating an aluminum layer on the transitional layer; using a nitriding process on the aluminum layer to form an aln material on the transitional layer; disposing an epitaxial layer on the transitional layer and covering the aln material, the epitaxial layer contacting the planar area and the patterned area of the transitional layer, a plurality of gaps being defined between the epitaxial layer and the slugs of the second part of the aln material in the patterned area of the transitional layer.. .
| Method of manufacturing light emitting diode die|
An exemplary method of manufacturing a light emitting diode (led) die includes steps: providing a preformed led structure, the led structure including a first substrate, and a nucleation layer, a buffer layer, an n-type layer, a muti-quantum well layer and an p-type layer formed successively on the first substrate; forming at least one insulation block on the p-type layer; forming a mirror layer on the on the p-type layer and covering the insulation block; forming a conductive second substrate on the mirror layer; removing the first substrate, the nucleation layer and the buffer layer and exposing a bottom surface of the n-type layer; and disposing one n-electrode on the exposed surface of the n-type layer. The n-electrode is located corresponding to the insulation block..
| Method for making light emitting diode|
A method for making a light emitting diode includes the following steps. A first epitaxial substrate having a first epitaxial growth surface is provided.
| Method and apparatus for accurate die-to-wafer bonding|
A method of light-emitting diode (led) packaging includes coupling a number of led dies to corresponding bonding pads on a sub-mount. A mold apparatus having concave recesses housing led dies is placed over the sub-mount.
| Method for hybrid encapsulation of an organic light emitting diode|
Methods and apparatus for encapsulating organic light emitting diode (oled) structures disposed on a substrate using a hybrid layer of material are provided. The encapsulation methods may be performed as single or multiple chamber processes.
| Methods and devices for multi-color, out-of-phase detection in electrophoresis|
The disclosure provides methods and devices for separating and detecting nucleic acid fragments labeled with a plurality of spectrally resolvable dyes using a single light source or multiple light sources. Use of a greater number of light sources increases the number of spectrally resolvable dyes that can be interrogated.
| Method and apparatus for treatment of solid material including hard tissue|
An apparatus for treatment of dental tissue has a first laser source optically connected to a first channel and the same first laser source optically connected to a second channel. The second laser source is optically connected to the first channel.
| Large area, low-defect gallium-containing nitride crystals, method of making, and method of use|
An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators..
| Lamp system for curing resin in laminated safety glass|
An apparatus for uniformly curing resin is described herein. The apparatus includes at least a lamp system that is to emit ultraviolet (“uv”) light.
| Single-fiber subassembly|
A single-fiber subassembly includes a first photodiode for receiving incident light, a laser diode for transmitting emergent light, and a same-wavelength optical splitter having a positive direction. The splitter includes a first birefringent plate, a half-wave plate, a 45° faraday rotator, and a second birefringent plate arranged in sequence along and vertical to the positive direction.
| Surface-emission laser diode and fabrication process thereof|
In a surface-emission laser diode, there is provided, between an active layer and a semiconductor layer that contains ai, ga and as as major components, a semiconductor layer containing ai, in and p as major components such that the semiconductor layer containing ai, in and p as major components is provided adjacent to the semiconductor layer that contains ai, ga and as as major components. Further, an interface between the semiconductor layer containing ai, ga and as as major components and the semiconductor layer containing ai, in and p as major components is coincident to a location of a node of electric field strength distribution..
| Efficient generation of intense laser light from multiple laser light sources using misaligned collimating optical elements|
A system is provided for combining laser light sources. The system includes: a stack of laser diode bar arrays, comprising two or more laser diode bar arrays, each laser diode bar array having multiple laser diodes; a multimode optical fiber; and a plurality of optical elements disposed between the stack of laser diode bar arrays and the multimode optical fiber, configured to direct light from the stack of laser diode bar arrays to the multimode optical fibers, the plurality of optical elements further including: a plurality of fast-axis collimating (fac) lenses, wherein at least one fac lens of the plurality of fac lenses corresponds to each laser diode bar array.
| Diode segmentation in memory|
Memory devices, memory arrays, and methods of operation of memory arrays with segmentation. Segmentation elements can scale with the memory cells, and may be uni-directional or bi-directional diodes.
| Reflector for light-emitting diode and housing|
Provided is a reflector for a light-emitting diode which has a small decrease in reflectance in a range from the ultraviolet region to visible region, and has excellent heat resistance, light resistance, and weather resistance, and a housing having this reflector. The reflector for a light-emitting diode is obtained by molding a fluororesin composition containing a filler with an average particle diameter of smaller than 1 μm, wherein the difference between the maximum value and the minimum value of the reflectance at a wavelength of 240-700 nm is within 25%..
| Wall-wash fixture for directional light sources|
A downlight reflector assembly for a light-emitting diode (led) light source includes a kicker reflector and an upper scoop. The kicker reflector has a reflector wall extending between a small top opening and a large bottom opening along a transverse axis.
| Illumination grille and assembly method|
Embodiments of the invention provide an illumination grille assembly comprising a frame and a ventilation grille coupled to the frame, and a plurality of light-emitting diodes coupled with the frame and at least partially covered with a light transparent cover. Some embodiments of the invention provide a lighting and ventilating system including a main housing including an inlet through which air can be received within the main housing and an outlet through which the air can exit the main housing.
| Headlight comprising light-emitting diodes|
For a headlight comprising a plurality of light-emitting diode arrangements (lg) arranged in a manner distributed in planar fashion on a carrier plate (tp), a cooling device for dissipating thermal power losses arising in the individual light-emitting diode arrangements, in which cooling device a plurality of flow channels extending parallel in terms of flow engineering are provided. The individual flow channels each contain a heat sink (kk), around which flows the partial air flow through the flow channel (fr) for the transfer of heat and which is connected to the relevant assigned light-emitting diode arrangement in a manner exhibiting good thermal conductivity..
| Hyperbolic ceiling-reflector for directional light sources|
A downlight fixture includes an optic housing, a light-emitting diode (led) array, and a lens-less reflector. The led array emits directional light rays in a downward direction towards an illuminated target.
| Power-rail electro-static discharge (esd) clamp circuit|
A power-rail esd clamp circuit with a silicon controlled rectifier and a control module is provided. The silicon controlled rectifier is connected to a high voltage level and a low voltage level for bearing a current flow.
| Capacitor discharge pulse drive circuit with fast recovery|
A circuit apparatus for driving short current pulses through a laser diode is disclosed. The circuit allow fast recovery time, comparable to the pulse duration.
| Copier with detachable image scanner|
A copier including a printing unit and a detachable image scanner that is physically detachable from the printing unit and communicably connectable to the printing unit. The image scanner includes a substrate; a microprocessor mounted on the substrate; a digital camera module mounted on the substrate and connected to the microprocessor; and a light-emitting diode (led) array mounted on the substrate and connected to the microprocessor.
| Apparatus, method, and computer program for a resolution-enhanced pseudo-noise code technique|
An apparatus, method, and computer program for a resolution enhanced pseudo-noise coding technique for 3d imaging is provided. In one embodiment, a pattern generator may generate a plurality of unique patterns for a return to zero signal.
| Liquid crystal display device|
A liquid crystal display device includes a liquid crystal display panel, a backlight including at least one light-emitting diode, a booster circuit part which includes a smoothing capacitor made of a ceramic capacitor at an output end, boosts a power supply voltage and applies the boosted voltage to the at least one light-emitting diode, a constant current circuit to drive the at least one light-emitting diode at a constant current based on a pwm signal inputted from outside, and a ripple reducing circuit to reduce an electric potential change of the smoothing capacitor based on the pwm signal inputted from the outside.. .
| Antiglare device|
Electro-optical glare protection device for protective glasses, protective helmets or protective masks comprising at least two optical sensors, which are equipped to detect the luminance of an object field and which have a different characteristic for the angle-dependent relative sensitivity (s0). In particular, at least a first sensor comprises a first photodiode (1) having a narrow detection angle θ1<45° and a second sensor comprises a second photodiode (2) with a wide detection angle θ2>45°.
| Organic light emitting diode display and driving method thereof|
An organic light emitting diode display includes at least one pixel circuit, a scanning drive unit connected to the pixel circuit through a scan line and generating a selection signal to be applied to the pixel circuit, and a data drive unit connected to the pixel circuit through a data line and applying a data voltage to the pixel circuit. The data drive unit includes a first line to which the data voltage is applied and a demultiplexer connected between the first line and a first end of the data line, the demultiplexer time-divisionally applying the data voltage applied to the first line to the data line according to a demultiplexing signal.
| Pixel and organic light emitting display using the same|
A pixel capable of realizing desired brightness and of displaying a uniform image is disclosed. In one aspect, the pixel includes an organic light emitting diode (oled), a first transistor having a second electrode thereof coupled to an anode electrode of the oled to control an amount of current supplied to the oled in response to a voltage applied to a gate electrode thereof.
| Pixel and organic light emitting display using the same|
A pixel capable of displaying an image with uniform brightness is disclosed. In one aspect, the pixel includes an organic light emitting diode (oled), a first transistor for controlling an amount of current that flows from a first power supply to a second power supply via the oled in response to a voltage applied to a first node.
| Helicopter collision-avoidance system using light fixture mounted radar sensors|
A helicopter collision-avoidance system is disclosed. An exemplary system includes at least one lamp, such as a light emitting diode (led) lamp, an incandescent lamp, a halogen lamp, an infrared lamp, or the like; a radar emitter configured to emit a radar signal; a radar detector configured to receive a radar return signal associated with reflections of the emitted radar signal that are reflected from an object; and a radio frequency (rf) system configured to wirelessly transmit radar information associated with the received radar return signal to a radar information receiver configured to receive the wirelessly transmitted radar information.
| Light beacon assembly|
The present application relates to a light beacon, light beacon assembly, and methods of its construction. In one aspect, a light beacon assembly includes a housing including a base and a lens cooperating to enclose an interior volume, the lens having a generally cylindrical shape.
| Temperature compensation circuit and electronic device with temperature compensation|
A temperature compensation circuit is adapted to be used in an electronic device including a processing circuit. The temperature compensation circuit includes a thermistor, a compensation capacitor and a compensation diode.
| Diode formed of pmosfet and schottky diodes|
A p-type metal-oxide-semiconductor field effect transistor (pmosfet) includes a gate, a first source/drain region connected to the gate, and a second source/drain region on an opposite side of the gate than the first source/drain region. A first schottky diode includes a first anode connected to the first source/drain region, and a first cathode connected to a body of the pmosfet.
| Semiconductor device|
The semiconductor device includes first and second output terminals each coupled to one end side and another end side of an inductive or capacitive load, a first mos transistor coupled between a first voltage and the first output terminal, a second mos transistor coupled between a second voltage and the first output terminal, a third mos transistor coupled between the first voltage and the second output terminal, a fourth mos transistor coupled between the second voltage and the second output terminal, and a drive circuit driving the first to fourth mos transistors for controlling the inductive or capacitive load, and further includes first and second bypass transistors for bypassing a forward current of a parasitic diode of a pn-junction formed in the mos transistor in the dead-off period.. .
| Lighting device|
A technology is provided for communicating with a microprocessor that is powering a plurality of light emitting diodes (leds). Information bits may be received at a microprocessor circuit coupled to the plurality of leds.
| Led drive circuit|
In aspects of the invention, a flyback converter configuration led drive circuit, by adopting a configuration such that anode voltages of leds smoothed by a smoothing capacitor on the secondary side of a transformer and a terminal of a drive ic circuit are used as a node common. Current can be supplied to the primary side of the smoothing capacitor by a start-up circuit when starting, the need for an auxiliary winding, smoothing capacitor, and rectifier diode which have heretofore been necessary to supply a power source to the drive ic circuit is eliminated.
| Organic light emitting display and driving method thereof|
An organic light emitting display comprises: a driving tft comprising a gate connected to a node b, a drain connected to an input terminal of high-potential cell driving voltage, and a source connected to the organic light emitting diode through a node c; a first switching tft for switching the current path between a node a and the node b in response to a light emission control signal; a second switching tft for initializing the node c in response to an initialization signal; a third switching tft for initializing either the node a or the node b in response to the initialization signal; a fourth switching tft for switching the current path between a data line and the node b in response to a scan signal; a compensation capacitor connected between the node b and the node c.. .
| Scr dimming circuit and method|
The present invention relates to a silicon-controlled rectifier (scr) dimming circuit and method for regulating the luminance of a light-emitting diode (led) load. In one embodiment, an scr dimming circuit can include: an scr rectifying circuit having an scr element that receives an ac power supply, and generates a lack-phase ac voltage; a rectifier bridge that converts the lack-phase ac voltage to a lack-phase dc voltage, where the lack-phase dc voltage is filtered through a filter capacitor to generate a smooth dc voltage; a conduction phase angle signal generator that receives the lack-phase dc voltage and generates a controlling signal indicating a conduction phase angle range of the scr element; and a dimming signal generator that compares the controlling signal and a slope reference signal to output a dimming signal to control the luminance of the led load..
| Signal detection circuit, igniter, and vehicle using the same|
There are provided a signal detection circuit and an igniter capable of enhancing a capability of withstanding breakdown by noise. The signal detection circuit includes an input terminal sin configured to receive a control signal from an ecu and a bidirectional floating diode provided between the input terminal and a ground.
| Linear light-emitting diode driving circuit with voltage-lowering serial capacitor|
A linear light-emitting diode (led) driving circuit with voltage-lowering serial capacitor has a rectification unit, an led unit, a constant current controller, a series and parallel voltage divider and a controller. The controller is built in with a safe voltage threshold, controls the series and parallel voltage divider to be connected in series to the led unit when an output voltage of the rectification unit exceeds the safe voltage threshold, ensuring that an average voltage across the led unit and the constant current controller is stable, and controls the series and parallel voltage divider to be parallelly connected across the led unit and the ground when the output voltage of the rectification unit does not exceed the safe voltage threshold.
| Controlled-silicon adapting led driving circuit, method and switch mode power supply|
Disclosed are light-emitting diode (led) driver circuits, methods, and a switch mode power supply. In one embodiment, an led driver can include: (i) a silicon-controlled rectifier (scr) and a rectifier bridge configured to receive an ac voltage, and to generate a phase-loss half sine wave voltage signal; (ii) a threshold voltage control circuit configured to receive a threshold voltage and an input voltage signal that represents the phase-loss half sine wave voltage signal, and to determine whether to output the threshold voltage based on angle information of the input voltage signal; (iii) a first control circuit configured to compare the input voltage signal against the threshold voltage output by the threshold voltage control circuit, and to generate a first control signal; and (iv) a power switch controllable by the first control signal to be off until an absolute value of the ac voltage is reduced to zero..
| Light-emitting diode driving apparatus|
A light emitting diode driving apparatus suitable for driving a light emitting diode string is provided. The light emitting diode driving apparatus includes a buck power conversion circuit and a control chip.
| Lighting systems and devices including multiple light-emitting diode units and associated methods|
Lighting systems including lighting fixtures having multiple light-emitting diode units and associated devices, systems, and methods are disclosed herein. A lighting system configured in accordance with a particular embodiment includes a plurality of lighting fixtures individually including first and second light-emitting diode units.
| Lumen depreciation management|
A monitoring system is configured to manage lumen depreciation in a lighting fixture and includes an optic housing, a light source with a light-emitting diode (led), a processor, and a memory device. The memory device stores instructions that cause the monitoring system to measure elapsed time during which the led light source emits the light and, based on the elapsed time, determine a current level of the emitted light.
| Wireless lighting control system|
A lighting device includes a ac/dc or dc/dc power converter, a controller/processor electrically connected to the ac/dc or dc/dc power converter, a light emitting diode (led) current control circuit communicably coupled to the controller/processor and electrically connected to the ac/dc or dc/dc power converter, and one or more leds electrically connected to the led current control circuit.. .
| Organic light emitting display apparatus and method of manufacturing the same|
An organic light emitting display apparatus includes a substrate, a display portion on the substrate, the display portion including a plurality of emission regions, each including an organic light emitting diode (oled), and a plurality of non-emission regions protruding from between the plurality of emission regions, an encapsulation substrate facing the substrate, a sealing material bonding the substrate and the encapsulation substrate and sealing the display portion, and a filling material on a surface of the encapsulation substrate facing the display portion, the filling material being spaced apart from the oled and being formed of a cured polyimide (pi).. .
| Method of manufacturing vertical pin diodes|
Disclosed is a vertical pin diode having: an n-type layer; a cathode contact formed on a first portion of the n-type layer defining a cathode region; an intrinsic layer formed on a second portion of the n-type layer; a portion of a p-type layer formed on a first portion of the intrinsic layer and defining an anode region; an anode contact formed on the portion of the p-type layer defining the anode region; and a protection structure formed on a second portion of the intrinsic layer to laterally protect the portion of the p-type layer defining the anode region from an etching intended to expose the first portion of the n-type layer defining the cathode region, wherein the protection structure is formed by implanting ions in a further portion of the p-type layer, which laterally surrounds the portion of the p-type layer defining the anode region.. .
| Partially-blocked well implant to improve diode ideality with sige anode|
A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an n-well in a selected portion of a p-type substrate adjacent an anode region of the substrate.
| Semiconductor device comprising a schottky barrier diode|
The present invention aims to enhance the reliability of a semiconductor device equipped with a schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a p-type semiconductor substrate, an n-type cathode region formed in part thereof and higher in impurity concentration than the n-well region, a p-type guard ring region formed so as to surround the n-type cathode region, an anode conductor film formed so as to integrally cover the n-type cathode region and the p-type guard ring region and to be electrically coupled thereto, n-type cathode conduction regions formed outside the p-type guard ring region with each separation portion left therebetween, and a cathode conductor film formed so as to cover the n-type cathode conduction regions and to be electrically coupled thereto.
| Diode and method of manufacturing diode|
A diode includes a first semiconductor layer configured by a compound semiconductor containing impurities of a first conductivity type; a high dislocation density region; a second semiconductor layer which is laminated on the first semiconductor layer, which is lower in a concentration of impurities in a region of a side of an interface with the first semiconductor layer than that of the first semiconductor layer, and which has an opening in which a portion which corresponds to the high dislocation density region is removed; an insulating film pattern which is provided to cover an inner wall of the opening; an electrode which is provided so as to cover the insulating film pattern and to contact the second semiconductor layer; and an opposing electrode which is provided to interpose the first semiconductor layer, the second semiconductor layer and the insulating film pattern between the electrode and the opposing electrode.. .
| High speed backside illuminated, front side contact photodiode array|
The present specification discloses front-side contact back-side illuminated (fsc-bsl) photodiode array having improved characteristics such as high speed of each photodiode, uniformity of the bias voltage applied to different photodiode, low bias voltage, reduced resistance of each photodiode, and an associated reduction in noise. The photodiode array is made of photodiodes with front metallic cathode pads, front metallic anode pad, back metallic cathode pads, n+ doped regions and a p+ doped region.
| Manufacturing method for edge illuminated type photodiode and semiconductor wafer|
A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions. .
| High sensitivity, solid state neutron detector|
An apparatus (200) for detecting slow or thermal neutrons (160). The apparatus (200) includes an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure.
| Electrostatic discharge (esd) device and method of fabricating|
A structure and method of fabricating electrostatic discharge (eds) circuitry in an integrated circuit chip by integrating a lateral bipolar, either a p-n-p with a nmosfet or a n-p-n with a pmosfet within a triple well. The lateral bipolar preferably includes diodes at the i/o and/or the vdds of the circuitry..
| Drain extended cmos with counter-doped drain extension|
An integrated circuit containing a diode with a drift region containing a first dopant type plus scattering centers. An integrated circuit containing a demos transistor with a drift region containing a first dopant type plus scattering centers.
| Semiconductor device and semiconductor package|
A semiconductor device capable of ensuring a withstand voltage of a transistor and reducing a forward voltage of a schottky barrier diode in a package with the transistor and the schottky barrier diode formed on chip, and a semiconductor package formed by a resin package covering the semiconductor device are provided. The semiconductor device 1 includes a semiconductor layer 22, a transistor area d formed on the semiconductor layer 22 and constituting the transistor 11, and a diode area c formed on the semiconductor layer 22 and constituting the schottky barrier diode 10.
| Semiconductor device and driving method thereof|
A transistor a gate of which, one of a source and a drain of which, and the other are electrically connected to a selection signal line, an output signal line, and a reference signal line, respectively and a photodiode one of an anode and a cathode of which and the other are electrically connected to a reset signal line and a back gate of the transistor, respectively are included. The photodiode is forward biased to initialize the back-gate potential of the transistor, the back-gate potential is changed by current of the inversely-biased photodiode flowing in an inverse direction in accordance with the light intensity, and the transistor is turned on to change the potential of the output signal line, so that a signal in accordance with the intensity is obtained..
| Tunable schottky diode|
A device includes a semiconductor substrate, first and second electrodes supported by the semiconductor substrate, laterally spaced from one another, and disposed at a surface of the semiconductor substrate to form an ohmic contact and a schottky junction, respectively. The device further includes a conduction path region in the semiconductor substrate, having a first conductivity type, and disposed along a conduction path between the first and second electrodes, a buried region in the semiconductor substrate having a second conductivity type and disposed below the conduction path region, and a device isolating region electrically coupled to the buried region, having the second conductivity type, and defining a lateral boundary of the device.
| Zener diode device and fabrication|
A disclosed zener diode includes, in one embodiment, an anode region and a cathode region that form a shallow sub-surface latitudinal zener junction. The zener diode may further include an anode contact region interconnecting the anode region with a contact located away from the zener junction region and a silicide blocking structure overlying the anode region.
| P-n separation metal fill for flip chip leds|
A light emitting diode (led) structure (10) has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted.
| Side view light emitting diode package and method for manufacturing the same|
A side view light emitting diode (led) package includes an electrode structure, an led die disposed on the electrode structure and an encapsulation layer covering the led die. The encapsulation layer includes a light outputting surface.
| Wafer level led package and method of fabricating the same|
Disclosed are a light emitting diode (led) package and a method of fabricating the same. The led package includes a first substrate, a semiconductor stack disposed on a front surface of the first substrate, a second substrate including a first lead electrode and a second lead electrode, a plurality of connectors electrically connecting the semiconductor stack to the first and second lead electrodes, and a wavelength converter covering a rear surface of the first substrate.
| Ultraviolet light emitting diode package|
An ultraviolet light emitting diode package for emitting ultraviolet light is disclosed. The ultraviolet light emitting diode package comprises an led chip emitting light with a peak wavelength of 350 nm or less, and a protective member provided so that surroundings of the led chip is covered to protect the led chip, the protective member having a non-yellowing property to energy from the led chip..
| Flip-chip light-emitting diode structure and manufacturing method thereof|
A flip-chip light-emitting diode structure comprises a carrier substrate, a light-emitting die structure, a reflective layer, an aperture, a dielectric layer, a first contact layer and a second contact layer. The light-emitting die structure, located on the carrier substrate, comprises a first type semiconductor layer, a second type semiconductor layer and a light emitting layer.
| Light emitting diode package and method for manufacturing the same|
An led package includes a first electrode, a second electrode adjacent to the first electrode, a molded body surrounding and encapsulating the first and second electrodes, and an led die mounted on the second electrode. The molded body includes a reflecting cup located over the first and second electrodes and the reflecting cup defines a receiving cavity in a top face to receive the led die.
| Light emitting diode package and method for manufacturing the same|
An led package includes adjacent first and second electrodes, first and second extension electrodes protruding sideward from the first and second electrodes, a molded body surrounding the first and second electrodes and an led die. The molded body forms a reflecting cup located over the first and second electrodes, with each reflecting cup defining a receiving cavity in a top face thereof to receive the led die.
| Light-emitting diode with a mirror protection layer|
A light-emitting diode (led) with a mirror protection layer includes sequentially stacked an n-type electrode, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a p-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer.
| Light emitting device having surface-modified quantum dot luminophores|
Exemplary embodiments of the present invention relate to a light emitting device including a light emitting diode and a surface-modified luminophore. The surface-modified luminophore includes a quantum dot luminophore and a fluorinated coating arranged on the quantum dot luminophore..
| Led structure|
A light emitting diode (led) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an led layer having a first led region and a second led region. The bond pad layer is electrically connected to the first dopant region.
| Led array|
A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes.
| Light-emitting device and method of manufacturing the same|
A light-emitting device may comprise a substrate, an electric wire fixed to the substrate, and a plurality of light-emitting diodes mounted to the electric wire. According to one embodiment, each of the plurality of light-emitting diodes is an led chip, and the light-emitting diodes on the substrate are sealed individually or collectively by one or more sealing members.
| Light emitting diode package and method for manufcturing the same|
An led package includes a substrate, an led chip mounted on the substrate, and a lens formed on the substrate and encapsulating the led chip therein. The lens includes a top surface and a bottom surface connecting a bottom end of the top surface.
| Super-junction semiconductor device|
An sj-mosfet can include an active region serving as a main current path and a temperature detection region including a temperature detecting diode. Main sj cells in which n drift regions and p partition regions are alternately adjacent to each other are arranged in a drift layer in the active region.
| Organic light-emitting diode and method for manufacturing same|
The present invention provides an organic light emitting diode comprising a first electrode, a second electrode and an organic material layer of one or more layers disposed between the first electrode and the second electrode, in which the organic material layer comprises a light emitting layer, an organic material layer comprising the compound represented by formula 1 is comprised between the first electrode and the light emitting layer, and the light emitting layer comprises a host comprising the compound represented by formula 1 and a dopant.. .
| Organic light emitting diode display and manufacturing method thereof|
An organic light emitting diode display and a manufacturing method thereof, and more particularly, an organic light emitting diode display having improved light extraction efficiency by forming both a first electrode and a second electrode as reflective electrodes to guide generated light to the side of a pixel, and a manufacturing method thereof.. .
| Anthracene compound and organic light emitting diode including the same|
An anthracene compound and organic light emitting diode including the same are disclosed. The organic light emitting diode includes, at least two stacks formed between a first electrode and a second electrode and a charge generation layer (cgl) including an n-type cgl and a p-type cgl formed between the stacks, wherein the n-type cgl is formed of the anthracene compound..
| Pyrene compound and organic light emitting diode device including the same|
A pyrene compound and an organic light emitting diode device including the same are disclosed. The organic light emitting diode device includes at least two stacks provided between a first electrode and a second electrode, and a charge generation layer provided between the stacks and including an n type charge generation layer and a p type charge generation layer, wherein the n type charge generation layer is made of the pyrene compound..
| Organic light emitting display and method for manufacturing the same|
Disclosed are an organic light emitting display that has a configuration excluding a polarizing plate and exhibits improved flexibility and visibility, and a method for manufacturing the same, the organic light emitting display includes a touch electrode array facing the organic light emitting diode on the second buffer layer, the touch electrode array including first and second touch electrodes intersecting each other and an exterior light shielding layer including at least a color filter layer, an adhesive layer formed between the organic light emitting diode and the touch electrode array.. .
| Organic light-emitting diode display panel and manufacturing method for the same|
The present invention discloses an oled display panel which includes a first tft array substrate, a first cover and a structural stiffening glue. A first frit and a second frit of the first cover have the structural stiffening glue provided at an outer side thereof, and the structural stiffening glue is in contact with the first tft array substrate and the first cover.
| Organic light emitting diode display device and method of manufacturing the same|
An oled display device is provided. The oled display device includes a substrate segmented into a plurality sub-pixel regions, a thin film transistor formed in each of the sub-pixel regions, an insulating layer and a planarizion layer formed on the thin film transistor, a semitransparent reflective layer selectively formed in each sub-pixel region on the planarizion layer, a protective layer formed on the semitransparent reflective layer, an anode electrode formed in a region corresponding to the semitransparent reflective layer on the protective layer and connected to the thin film transistor, an organic light emitting layer connected to the anode electrode, and emitting light, and a cathode electrode formed on the organic light emitting layer..
| High efficiency and brightness fluorescent organic light emitting diode by triplet-triplet fusion|
A first device is provided. The first device further comprises an organic light emitting device.
| Nitride nanowires and method of producing such|
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, leds and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a cvd based selective area growth technique.
| Light emitting diode|
The present invention provides a light emitting diode, which comprises a first led die and a second led die, each die comprising a first semi-conductive layer, a second semi-conductive layer, and a multiple quantum well layer disposed between the first and the second semi-conductive layers, wherein the first semi-conductive layer of the first led die is coupled to the second semi-conductive layer of the second led die so as to form a serially connected structure whereby the consuming current and heat generation of the light emitting diode are lowered so that the size of heat dissipating device for the light emitting diode can be reduced and illumination of the light emitting diode can be enhanced.. .
| Bis(sulfonyl)biaryl derivatives as electron transporting and/or host materials|
The inventions disclosed, described, and/or claimed herein relate to bis(sulfonyl)biaryl compounds that are useful as electron transporting materials useful for making novel organic electronic devices, including the electron transport layers of organic light-emitting diodes (“oleds”), or as an electron transporting guest for phosphorescent guests in the emissive layer of oleds.. .
| Two-state negative feedback avalanche diode|
A negative feedback avalanche diode for detecting the receipt of a single photon is described. The photodetector comprises a load element having two load states, one characterized by high impedance and the other characterized by low impedance.