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Diode

Diode-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Ultrathin lcd module and liquid crystal display
Shenzhen China Star Optoelectronics Technology Co., Ltd.
October 12, 2017 - N°20170295678

An ultrathin lcd module and a liquid crystal display are provided. The ultrathin lcd module has a printed circuit board, a liquid crystal panel connected with the printed circuit board through at least one flexible circuit board, and an array light source of light emitting diodes disposed between the printed circuit board and the liquid crystal panel, which has a ...
Light-emitting diode (led) light sets
Shenzhen China Star Optoelectronics Technology Co., Ltd.
October 12, 2017 - N°20170295622

Apparatuses and systems are provided for changing the spectrum of light emission from a light-emitting diode (led) light set. The led light set may include leds, each of which having at least a first led chip and a second led chip configured to emit light at differing wavelengths. The first and second led chips may be connected in series with ...
Light-emitting diode (led) driving device and led lighting device containing the same
Sengled Co., Ltd.
October 12, 2017 - N°20170295617

The present disclosure provides a light-emitting diode (led) driving device, including a control unit and a power unit integrated on a packaging substrate to form an integrated circuit (ic). The control unit is electrically connected to the power unit for controlling the power unit to convert an ac current to a dc current for an led load to emit light. ...
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X-ray detector and x-ray apparatus
Samsung Electronics Co., Ltd.
October 12, 2017 - N°20170295336

An x-ray detector includes a plurality of photodiodes arranged in a matrix shape and respectively connected to switching devices, a plurality of gate lines formed in a first direction and connected to the switching devices; a plurality of data lines, wherein n data lines are formed in each second-direction column of the matrix shape, wherein n is greater than 1; and ...
Digital unit cell with analog counter element
Raytheon Company
October 12, 2017 - N°20170295333

According to one aspect, embodiments herein provide a digital unit cell comprising a photodiode, an integration capacitor, a comparator configured to compare a voltage across the integration capacitor with a threshold voltage and to generate a control signal at a first level each time the voltage across the integration capacitor is greater than the threshold voltage, a charge subtraction circuit ...
Electronic device with substrate current management
Monolithic Power Systems, Inc.
October 12, 2017 - N°20170294902

An electronic device with substrate current management. The electronic device has a semiconductor substrate in which a schottky diode is formed. A parasitic pn diode is also formed in the semiconductor substrate, and coexisted with the schottky diode in parallel. The forward voltage of the schottky diode is limited to be larger than the forward conduction threshold voltage of the ...
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Power conversion device including primary inverter, transformer, secondary converter, and controller
Panasonic Intellectual Property Management Co., Ltd.
October 12, 2017 - N°20170294843

A power converter includes first to fourth terminals, a transformer including primary and secondary windings, an inverter connected between the first and second terminals and the primary winding, a converter connected between fifth and sixth terminals, and a controller. The converter includes first to eighth switch circuits each including a diode and a switch connected in parallel. When a voltage ...
Dc-dc voltage conversion device
Mitsubishi Electric Corporation
October 12, 2017 - N°20170294838

In a dc-dc voltage conversion device, overheat of a diode element connected in anti-parallel with a semiconductor switching element is a problem, and in order to resolve this, a temperature of a semiconductor switching element of a main conversion circuit is detected, a temperature of a diode element connected in parallel with the semiconductor switching element is calculated using a ...
Laser diode
Sony Corporation
October 12, 2017 - N°20170294761

A laser diode with an improved kink level in the l-i characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride iii-v compound semiconductor containing at least gallium (ga) in 3b-group elements and at least nitrogen (n) in 5b-group elements, an n-type compound semiconductor ...
Optical amplifier
Sony Corporation
October 12, 2017 - N°20170294756

An erbium doped block of glass has input port and reflective end faces arranged such that a signal is launched into the block and is amplified as it traverses the block following a zig-zag path. A laser diode pump is focused to excite erbium ions within the block thereby amplifying the input signal light traversing the block numerous times. A ...
Phased-array antenna with in-plane optical feed and method of manufacture
Phase Sensitive Innovations, Inc.
October 12, 2017 - N°20170294720

A phased antenna array comprises a plurality of antennas and photodiodes arranged on a substrate. Each antenna is driven by an electrical signal output by the photodiode. The photodiodes each receive an optical signal via an optical fiber. The optical fibers conform to the sheet-like shape of the antenna array (which may be planar or curved) and optically communicate with ...
Organic light emitting diode and light emitting diode display
Phase Sensitive Innovations, Inc.
October 12, 2017 - N°20170294628

In equation 1, n*k (λ=405 nm) represents an optical value that is a product of a refractive index and an absorption coefficient in a 405 nanometer wavelength.
Organic light emitting diode
Samsung Display Co., Ltd
October 12, 2017 - N°20170294627

The described technology relates to an organic light emitting diode including: a first electrode; a second electrode overlapping the first electrode; an organic emission layer between the first electrode and the second electrode; and a capping layer on the second electrode, wherein the capping layer has an absorption rate of 0. 25 or more for light having a wavelength of 405 nm, thereby ...
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Organic light-emitting diode structure and fabrication method thereof, related display panel, and related display device
Boe Technology Group Co., Ltd
October 12, 2017 - N°20170294624

The present disclosure provides an organic light-emitting diode device (oled) structure for compensating blue light emission. The oled structure in a substrate with a thin-film transistor layer, the substrate being substantially transparent; and a first electrode layer on the substrate, the alit electrode being substantially transparent; a first light-emitting layer on the first electrode layer with one or more light-emitting ...
Color filter substrate and fabrication method thereof, oled structure, related display panel, and related display ...
Boe Technology Group Co., Ltd
October 12, 2017 - N°20170294614

The present disclosure provides a color filter substrate used in an organic light-emitting diode (oled) or liquid crystal (lc) display structure for improving a contrast ratio and light output. The color filter substrate includes a substrate; a color filter layer comprising a plurality of pixel units; and a reflective metallic matrix comprising a plurality of reflective metallic matrix elements surrounding ...
Iridium complex, method for manufacturing same, and organic light-emitting devices using same
Aac Technologies Pte, Ltd.
October 12, 2017 - N°20170294603

An iridium complex is disclosed. The iridium complex with a new type of primary ligand and (4-trifluoromethyl) tetraphenylphosphorane as an auxiliary ligand takes any one of 2-(4,6-bi trifluoromethyl-3-) pyridine, 2-(4,6-bi trifluoromethyl-4-) pyridine, 2-(4,6-bi trifluoromethyl-3-) pyrimidine, 2-(4,6-bi trifluoromethyl-4-) pyrimidine, 2-(4,6-bi trifluoromethyl-3-) pyrazinyl, 2-(4,6-bi trifluoromethyl-4-) pyrazinyl, 2-(4,6-bi trifluoromethyl-3-) ...
Iridium complex, method for manufacturing same, and organic light-emitting devices using same
Aac Technologies Pte, Ltd.
October 12, 2017 - N°20170294602

An iridium complex is disclosed. The iridium complex with a new type of primary ligand and (4-trifluoromethyl) tetraphenylphosphorane as an auxiliary ligand takes any one of 2-(4,6-bi trifluoromethyl-3-) pyridine, 2-(4,6-bi trifluoromethyl-4-) pyridine, 2-(4,6-bi trifluoromethyl-3-) pyrimidine, 2-(4,6-bi trifluoromethyl-4-) pyrimidine, 2-(4,6-bi trifluoromethyl-3-) pyrazinyl, 2-(4,6-bi trifluoromethyl-4-) pyrazinyl, 2-(4,6-bi trifluoromethyl-3-) ...
Iridium complex, method for manufacturing same, and organic light-emitting devices using same
Aac Technologies Pte, Ltd.
October 12, 2017 - N°20170294601

An iridium complex is disclosed. The iridium complex with tetra(4-fluorophenyl) phosphorane as an auxiliary ligand, the series of iridium complex takes any one of 2-(4,6-bi trifluoromethyl)pyridine, 2-(4,6-bi trifluoromethyl)pyrimidine, 2-(4,6-bi trifluoromethyl)pyrazinyl and 2-(4,6-bi trifluoromethyl) triazine derivatives as primary ligands in its molecule. The new type of iridium complex covered by the present invention ...
Iridium complex, method for manufacturing same, and organic light-emitting devices using same
Aac Technologies Pte, Ltd.
October 12, 2017 - N°20170294600

An iridium complex is disclosed. The iridium complex with tetraphenylphosphorane as an auxiliary ligand takes any one of 2-(4,6-bi trifluoromethyl)pyridine, 2-(4,6-bi trifluoromethyl)pyrimidine, 2-(4,6-bi trifluoromethyl)pyrazinyl and 2-(4,6-bi trifluoromethyl) triazine derivatives as primary ligands in its molecule. The new type of iridium complex covered by the present invention has not only such advantages as high ...
Display apparatus
Samsung Display Co., Ltd.
October 12, 2017 - N°20170294565

A display apparatus includes a substrate, a light-emitting diode (“led”) provided above the substrate, an insulating layer provided above the led, and a wire grid polarizer (“wgp”) provided above the insulating layer.
Light-emitting diode chips with enhanced brightness
Xiamen Changelight Co., Ltd.
October 12, 2017 - N°20170294557

According to at least some embodiments of the present disclosure, a light-emitting diode (led) chip includes a semiconductor material portion, a transparent conductive layer disposed above the semiconductor material portion, a current blocking layer disposed above the transparent conductive layer, one or more electrodes disposed above the current blocking layer, and a plurality of electron outflow channels that electrically interconnect ...
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