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Diode

Diode-related patent applications - as published by the U.S. Patent and Trademark Office (USPTO).


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Light emitting diode light structures
Austin Ip Partners
February 15, 2018 - N°20180049289

A light emitting diode (led) light includes a bridge rectifier configured to be powered by an alternating current power source and to produce a rectified output. Control circuitry couples to the bridge rectifier and is configured to produce a shunt signal when the rectified output is less than a threshold voltage. A series connected light emitting diode (led) string includes ...
Light emitting device and led light bulb
Phoenix Electric Co., Ltd.
February 15, 2018 - N°20180049285

A light emitting device includes: a first white light source which includes n pieces of first white light emitting diodes and emits a first white light; and a second white light source which includes m pieces of second white light emitting diodes and a first resistance element electrically connected in series to the second white light emitting diodes and having ...
Global shutter image sensor pixels having improved shutter efficiency
Semiconductor Components Industries, Llc
February 15, 2018 - N°20180048841

An image sensor may be provided with an array of image sensor pixels formed on a substrate having front and back surfaces. Each pixel may have a photodiode that receives light through the back surface, a floating diffusion node, a charge transfer gate, and first and second reset transistor gates. A source follower transistor may have a gate coupled to ...
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Method and system for reliable bootstrapping switches
Maxlinear, Inc.
February 15, 2018 - N°20180048301

Methods and systems for reliable bootstrapping switches may comprise sampling a received signal with a bootstrapping switch, where the bootstrapping switch comprises a switching metal-oxide semiconductor (mos) transistor having a pull-down path coupled to a gate terminal of the switching mos transistor, wherein: source terminals of both a diode-connected transistor and a second mos transistor are coupled to the gate ...
Amplifier circuit with overshoot suppression
Novatek Microelectronics Corp.
February 15, 2018 - N°20180048266

An amplifier circuit including an input amplifier, an output amplifier and a diode device is provided. The output amplifier is coupled to the input amplifier and outputting an output voltage. The diode device is coupled between an output end and an input end of the output amplifier. When a voltage difference between the output end and the input end of ...
Temperature-compensated rectifying component
Thermo Fisher Scientific (bremen) Gmbh
February 15, 2018 - N°20180048245

A temperature-compensated rectifying component is configured to receive an input signal and comprises: a diode part, for rectifying the received input signal and providing a rectified output signal thereby, the diode part having an operational temperature; and a temperature compensation controller, configured to control a power dissipated by the diode part over a predetermined period of time, such that an ...
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Method to tune emission wavelength of wavelength tunable laser apparatus and laser apparatus
Sumitomo Electric Device Innovations, Inc.
February 15, 2018 - N°20180048117

A method to tune an emission wavelength of a wavelength tunable laser apparatus is disclosed. The laser apparatus implements, in addition to a wavelength tunable laser diode (t-ld) integrating with a semiconductor optical amplifier (soa), a wavelength monitor including an etalon filter. The current emission wavelength is determined by a ratio of the magnitude of a filtered beam passing the ...
Ruby laser pumped ultrashort pulse laser
Wfk Lasers, Llc.
February 15, 2018 - N°20180048111

An apparatus and method are provided for producing an ultrashort pulsed output beam. A 694 nm pump beam from a first gan semiconductor laser diode pumped, q-switched ruby laser is directed into at least one amplifier that includes a broadband gain element doped with trivalent chromium ions (cr3+). A spectrally linearly chirped low-intensity seed pulse from a master oscillator is directed ...
Light emitting diode and display device including the same
Samsung Display Co., Ltd.
February 15, 2018 - N°20180047929

An exemplary embodiment of the present disclosure provides a light emitting diode including: a first electrode; a second electrode configured to overlap the first electrode; an emission layer between the first electrode and the second electrode; and an electron-injection layer between the emission layer and the first electrode, wherein the electron-injection layer includes a compound xin, in xin the subscript ...
Multi-material led heat sinks
Gm Global Technology Operations Llc
February 15, 2018 - N°20180047885

A number of variations may include a product that may include a first heat sink that may include a first face opposite a second face, a plurality of fins disposed on the second face, and a recess that may be defined by the first face; a second heat sink may be disposed within the recess and may have a third ...
Package structure for ultraviolet light-emitting diode
Institute Of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, R.o.c.
February 15, 2018 - N°20180047881

The present embodiment discloses a package structure for ultraviolet led, which comprises a substrate, an ultraviolet light-emitting diode (led), and an optical device. The wavelength of the light emitted by the ultraviolet led is between 200 and 400 nm. The optical device includes amorphous silicon dioxide, and thus enabling the transmittivity of ultraviolet light greater than 80%. In addition, by including a reflective ...
Micro-light-emitting diode device
Au Optronics Corporation
February 15, 2018 - N°20180047865

A micro-light-emitting diode device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer has a first bottom surface. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer. The second semiconductor layer and the active layer have an interface. A surface of ...
Method of manufacturing a semiconductor device
Sii Semiconductor Corporation
February 15, 2018 - N°20180047858

Provided is a method of manufacturing a semiconductor device having a photodiode that has a shallow p-n junction and thus achieves high sensitivity to an ultraviolet ray, in which an oxide containing impurities at high concentration is deposited on the surface of the silicon substrate, and thereafter a diffusion region is formed to have a shallow junction by performing thermal ...
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Bidirectional zener diode
Rohm Co., Ltd.
February 15, 2018 - N°20180047854

A bidirectional zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode which are defined on the semiconductor substrate, and a plurality of diffusion regions of a second conductivity type, which are defined at intervals from one another on a surface portion of the semiconductor substrate, to define ...
Semi-floating gate fet
Stmicroelectronics, Inc.
February 15, 2018 - N°20180047849

A semi-floating gate transistor is implemented as a vertical fet built on a silicon substrate, wherein the source, drain, and channel are vertically aligned, on top of one another. Current flow between the source and the drain is influenced by a control gate and a semi-floating gate. Front side contacts can be made to each one of the source, drain, ...
Power mosfet, an igbt, and a power diode
Renesas Electronics Corporation
February 15, 2018 - N°20180047843

Super-junction mosfets by trench fill system requires void-free filling epitaxial growth. This may require alignment of plane orientations of trenches in a given direction. Particularly, when column layout at chip corner part is bilaterally asymmetrical with a diagonal line between chip corners, equipotential lines in a blocking state are curved at corner parts due to column asymmetry at chip corner. ...
Metallization and its use in, in particular, an igbt or a diode
Infineon Technologies Ag
February 15, 2018 - N°20180047815

A vertical power semiconductor component includes a semiconductor chip, the semiconductor chip having a top main surface and a bottom main surface. Each of said top main surface and said bottom main surface is in a heat exchanging relationship with a top metallization layer and a bottom metallization each of which serving as a heat sink. Each of said top ...
Organic light emitting display device
Samsung Display Co., Ltd.
February 15, 2018 - N°20180047800

Provided is an organic light emitting display device including a base substrate, a pixel layer, a quantum dot layer, and a thin film encapsulation part. The pixel layer includes a plurality of organic light emitting diodes on the base substrate. The quantum dot layer includes quantum dots on the pixel layer. The thin film encapsulation part is between the quantum ...
Organic light emitting diode display, optical unit, and method for manufacturing optical unit
Samsung Display Co., Ltd.
February 15, 2018 - N°20180047797

An organic light emitting diode display includes: a display module including a first organic light emitting diode to emit light with a first wavelength, a second organic light emitting diode to emit light with a second wavelength, and a third organic light emitting diode to emit light with a third wavelength; a phase difference layer including a first liquid crystal ...
Memory devices and memory device forming methods
Micron Technology, Inc.
February 15, 2018 - N°20180047783

Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive states, and a diode configured to allow a current to flow from the wordline through the memory element to the bitline responsive to a voltage being applied across the wordline and the bitline and to decrease the ...
Dot matrix light-emitting diode light source for a wafer-level microdisplay and method for fabricating the ...
Trend Lighting Corp.
February 15, 2018 - N°20180047781

A dot matrix light-emitting diode (led) backlighting light source for a wafer-level microdisplay includes a substrate, multiple led sets arranged at spaced intervals, a first electrode assembly, and a second electrode assembly. The multiple led sets have multiple leds spaced apart and aligned in a first direction. The first electrode assembly and the second electrode assembly are formed on the ...
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