|| List of recent Diffusion-related patents
| Method and system for evaluating stability of cardiac propagation reserve|
A method of determining the susceptibility to ventricular arrhythmias in a subject, comprises the steps of: (a) collecting (e.g., by surface ekg or intracardiac ekg) at least one qt and di interval data set from the subject during a stage of gradually increasing heart rate or a stage of gradually decreasing heart rate; (b) determining (e.g., by applying low- and high pass filtering) low-frequency qt-di interval trends and high-frequency qt-di fluctuation signals in said at least one qt and di interval data set; (c) finding a plurality of correlated and anti-correlated portions between said high-frequency qt-di fluctuation signals; (d) determining corresponding regression lines for said correlated and anti-correlated portions; (e) finding a plurality of (or in some embodiments all) steady state qt-di points designated by intersections between said low frequency qt-di trends and said corresponding regression lines; (f) fitting action potential durations computed from a rate dependent reaction-diffusion model to corresponding ones of said steady state qt-di points to give (i) a model excitation threshold and (ii) a minimal level of refractoriness at a plurality of (or in some embodiments all of) said steady state qt-di points; (g) at the steady state qt-di point corresponding to the highest heart rate in said qt and di interval data set, determining the difference between said minimal level of refractoriness and a model critical excitation threshold for a stable solitary pulse corresponding to the rate dependent reaction diffusion model of step (f) to give a reserve of refractoriness (ror); (h) fitting action potential durations computed from a rate dependent reaction-diffusion model to said correlated and anti-correlated portions to give a rate of adaptation of each model excitation threshold to a corresponding steady state value at a plurality of (or in some embodiments all of) said steady state qt-di points; (i) at the steady state qt-di point corresponding to the highest heart rate in said qt and di interval data set, determining the inverse of said rate of adaptation to give a reserve of memory (rom); (j) combining said reserve of refractoriness (ror) and said reserve of memory (rom) to produce a metric of stability-of-propagation reserve (sopr) in said subject, a higher value of sopr indicating lower susceptibility to ventricular arrhythmias in said subject. Systems and apparatus for carrying out the method are also described..
| Method for manufacturing semiconductor device and semiconductor device|
A manufacturing method includes forming a fin-shaped silicon layer on a silicon substrate, forming a first insulating film around the fin-shaped silicon layer, and forming a pillar-shaped silicon layer on the fin-shaped silicon layer; forming diffusion layers in an upper portion of the pillar-shaped silicon layer, an upper portion of the fin-shaped silicon layer, and a lower portion of the pillar-shaped silicon layer; forming a gate insulating film, a polysilicon gate electrode, and a polysilicon gate wiring; forming a silicide in an upper portion of the diffusion layer in the upper portion of the fin-shaped silicon layer; depositing an interlayer insulating film, exposing the polysilicon gate electrode and the polysilicon gate wiring, etching the polysilicon gate electrode and the polysilicon gate wiring, and then depositing a metal to form a metal gate electrode and a metal gate wiring; and forming a contact.. .
| Thin film deposition of materials by external induced release from a ribbon tape|
A process where a printed ink is placed onto a sacrificial ribbon. The ink is then converted to a metal film and transferred to a substrate, such as a silicon solar cell at very low temperatures.
| Solid-state imaging device, method of manufacturing same, and electronic apparatus|
A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain.
| I-line photoresist composition and method for forming fine pattern using same|
An i-line photoresist composition, having excellent thermal stability at high temperature of 200-250° c., by which fine photoresist patterns form using an acid diffusion layer and a method for forming a fine pattern using the same, comprising: a polymer containing 1-99 mol % of repeating unit selected from a group consisting of 1-99 mol % of repeating unit represented by formula 1, repeating unit represented by formula 2, repeating unit represented by formula 3 and mixture thereof; a photo active compound containing at least two diazonaphtoquinone (dnq) groups; and an organic solvent. Formulas 1-3 are located in the specification.
| Encapsulation film with thin layer composed of graphene oxide and reduced graphene oxide and method for forming the same|
Provided are an encapsulation film formed by stacking at least one bilayer including a thin layer composed of graphene oxide or reduced graphene oxide and an organic polymer layer and a method for forming the same. Since the encapsulation film is formed by stacking at least one bilayer including a thin layer composed of graphene oxide or reduced graphene oxide, the encapsulation film can represent an excellent blocking property with respect to oxygen and moisture.
| Controlled drug delivery|
A medical device for placement in a body of a mammal is provided. The medical device comprises (1) a polymeric matrix forming the device and defining a lumen through the device, the matrix comprising polymer macromolecules and defining spaces between the polymer macromolecules; (2) a drug contained within at least some of the spaces of the matrix; and (3) a material contained within at least some of the spaces of the matrix to affect diffusion of the drug out of the polymeric matrix when the medical device is placed in the body of the mammal..
| Method and system for calculating a quantification indicator for quantifying a dermal reaction on the skin of a living being|
This method is designed for calculating a quantification indicator for quantifying a dermal reaction on a skin having several chromophores. The method includes illumination of a zone to be characterized on the skin, the skin reaction being included in the zone to be characterized; and measurement of the spectrum of a back scattered radiation coming from the skin after illumination of said zone to be characterized.
| Optical substrates having light collimating and diffusion structures|
An optical substrate having a structured prismatic surface and an opposing structured lenticular surface. The structured lenticular surface includes shallow-curved lens structures.
| Multicomponent optical device having a space|
The present disclosure relates generally to multicomponent optical devices having a space within the device. In various embodiments, an optical device comprises a first posterior component having an anterior surface, a posterior support component, and an anterior component having a posterior surface.
| Illumination unit, display, and electronic apparatus|
Provided is an illumination unit capable of utilizing back light. Also provided are a display and an electronic apparatus each including this illumination unit.
| Bioleaching bioreactor with a system for injection and diffusion of air|
The present invention is related to a bioleaching bioreactor having an air injection and diffusion system, which allows to control the air bubble fine size, improving the oxygen and carbon dioxide distribution required by the microorganisms promoting the bioleaching process, in order to maintain the cellular concentration during the process. The bioleaching bioreactor comprises a reactor body to contain the pulp to be processed and to allow the reaction to proceed; a support base to secure the reactor body; a pulp feeding device, protruding inwards the reactor body; an air injection and diffusion system to mix and to supply the air required by the reaction process; at least four vortex breaking elements located inside the reactor body; at least a heating element surrounding the reactor body to maintain the reaction temperature; a pulp outlet port to deliver the pulp already processed; an inlet port for the pulp to be processed; an air inlet port, located at the upper end of the reactor body; and, a vapor outlet port, located at the upper end of the reactor body..
| Bonded structure with enhanced adhesion strength|
A first bonding material layer is formed on a first substrate and a second bonding material layer is formed on a second substrate. The first and second bonding material layers include a metal.
| Semiconductor device and manufacturing method of semiconductor device|
A technique for improving characteristics of a semiconductor device (dmosfet) is provided. A semiconductor device is configured so as to include: an n-type source layer (102) disposed on an upper portion of a first surface side of an sic substrate (106); a p body layer (103) which surrounds the source layer and has a channel region; an n−-type drift layer (107) which is in contact with the p body layer (103); a gate electrode (116) which is disposed on an upper portion of the channel region via a gate insulating film; and a first p+ layer (109) which is disposed in the p body layer (103), extends to a portion below the n+ source layer (102), and serves as a buried semiconductor region having an impurity concentration higher than that of the p body layer (103).
| Semi conductor device having elevated source and drain|
Semiconductor layers on active areas for transistors in a memory cell region (region a) and a peripheral circuit region (region b) are simultaneously epitaxially grown in the same thickness in which the adjacent semiconductor layers in region a do not come into contact with each other. Only semiconductor layer (10) in region b is also grown from the surface of a substrate which is exposed when only the surface of sti (2) in region b is drawn back, so that a facet (f) of the semiconductor layer 10 is formed outside the active area, followed by ion-implantation to form a high density diffusion layer (11) in region b.
| High electron mobility transistor and method of forming the same|
A semiconductor structure includes a first iii-v compound layer. A second iii-v compound layer is disposed on the first iii-v compound layer and is different from the first iii-v compound layer in composition.
| Photoelectronic device and image sensor|
Disclosed are a photoelectronic device including a first electrode including a first metal; an active layer disposed between the first electrode and a second electrode; and a diffusion barrier layer disposed between the first electrode and the active layer; the diffusion barrier layer including a second metal, wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and wherein the first electrode and the diffusion barrier layer are configured to transmit light, and an image sensor including the photoelectronic device.. .
| Systems and methods for monitoring materials|
The present disclosure provides sensing systems and methods that are useful for monitoring materials (e.g., cement) via light diffusion to identify characteristics thereof and changes therein. The systems can utilize a light source, a light sensor, and light transmitting members combined with the material to be monitored.
| Bright source protection for low light imaging sensors|
This invention relates to a low light imaging sensors and particularly image intensification and cmos sensors. To overcome issues of dazzle and halo when operating in areas where the scene encompasses bright light sources, the invention provides material layers in contact with the detector material to spatially limit the generation or subsequent diffusion of electrons in said detector material.
| High dynamic range pixel having a plurality of amplifier transistors|
A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode.
| Image sensor with pixel units having mirrored transistor layout|
An image sensor includes a first pixel unit horizontally adjacent to a second pixel unit. Each pixel unit includes plurality of photodiodes and a shared floating diffusion region.
| Systems and methods for regenerating liquid solvents used in the removal of organic contaminants from gaseous mixtures|
A method is provided of regenerating solvents used to remove gaseous contaminants from gaseous mixtures of various compositions with significantly reduced energy required, where one exemplary method includes directing a solution with the solvents and the preferentially absorbed and/or dissolved gaseous contaminants through a filter comprising a membrane having pre-determined diffusion rates so that a substantial portion of the gaseous contaminants pass through the filter, permitting the passage of the gaseous contaminants through the membrane for further processing, and recirculating the separated solvent so that it may be used again to remove new gaseous contaminants. In some cases, it may be desired to permit some of the solvent to pass through the membrane along with the gaseous contaminant..
| Ceramic showerhead with embedded rf electrode for capacitively coupled plasma reactor|
A showerhead assembly for a substrate processing system includes a back plate connected to a gas channel. A face plate is connected adjacent to a first surface of the back plate and includes a gas diffusion surface.
| Photoelectric conversion device and manufacturing method thereof, and photoelectric conversion module|
A photoelectric conversion device in which a substantially intrinsic i-type amorphous hydrogen-containing semiconductor layer, a p-type amorphous hydrogen-containing semiconductor layer, and a first transparent conductive layer are stacked in this order on a first surface of an n-type semiconductor substrate that generates a photogenerated carrier by receiving light, wherein the first transparent conductive layer includes a hydrogen-containing area formed of a transparent conductive material that contains hydrogen and a hydrogen-diffusion suppression area that is present on a side of the p-type amorphous hydrogen-containing semiconductor layer with respect to the hydrogen-containing area and that is formed of a transparent conductive material that does not substantially contain hydrogen, and the hydrogen-diffusion suppression area has a hydrogen concentration distribution in which a hydrogen content on a side of the p-type amorphous hydrogen-containing semiconductor layer is lower than that on a side of the hydrogen-containing area.. .
| Lyotropic liquid crystal coated analyte monitoring device and methods of use|
The present invention is directed to membranes composed liquid crystals having continuous aqueous channels, such as a lyotropic liquid crystal, including a cubic phase lyotropic liquid crystal, and to electrochemical sensors equipped with such membranes. The membranes are useful in limiting the diffusion of an analyte to a working electrode in an electrochemical sensor so that the sensor does not saturate and/or remains linearly responsive over a large range of analyte concentrations.
|Content virality determination and visualization|
Various techniques of content virality determination and visualization are disclosed herein. For example, a method of determining network content virality metric includes constructing a diffusion cascade for a computer network content based on a plurality of time points at which individual users adopt the network content and connection information of the users.
|Option pricing model for event driven call and put options|
Systems and methods are provided for valuing event driven option contracts. A jump diffusion based model, such as a merton jump diffusion based model, is modified to assume arithmetic movement of an underlying price and a single jump.
|Drug delivery system and method of manufacturing thereof|
A medical device for surgical implantation adapted to serve as a drug delivery system has one or more drug loaded holes with barrier layers to control release or elution of the drug from the holes or to control inward diffusion of fluids into the holes. The barrier layers are non-polymers and are formed from the drug material itself by beam processing.
|Display device, and game console including same|
A display device includes: a first liquid crystal display device; a second liquid crystal display device which is disposed behind the first liquid crystal display device to be overlapped in a forward/rearward direction; and a light diffusion plate which is disposed between the first and second liquid crystal display devices. The first liquid crystal display device includes: a liquid crystal panel; a color filter plate which is disposed in front of the liquid crystal panel, a predetermined region of the color filter plate being removed; a polarizer plate which is disposed at a front and/or a rear of the liquid crystal panel; and a light source which is disposed behind the liquid crystal panel.
|Junction field effect transistor structure with p-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure|
Disclosed are embodiments of a junction field effect transistor (jfet) structure with one or more p-type silicon germanium (sige) or silicon germanium carbide (sigec) gates (i.e., a sige or sigec based heterojunction jfet). The p-type sige or sigec gate(s) allow for a lower pinch off voltage (i.e., lower voff) without increasing the on resistance (ron).
|Semiconductor lighting devices and methods|
Lighting device embodiments having a housing enclosing one or more interior volumes, along with a serviceable port in the housing to allow venting of one or more of the interior volumes, are disclosed. The lighting devices may further include internal venting paths to allow transfer of contaminating gases to the serviceable port, and a gas permeable pressure valve to allow transfer of contaminants from the interior of the lighting device.
|Pointer-type display device|
Disclosed is a pointer-type display device having a high degree of design freedom, with which a design can be efficiently illuminated. Said device is provided with a light guide letter board (10), a light guide body (20), and a pointer (30), and a first light source (51).
|System for semiconductor device characterization using reflectivity measurement|
A system includes a computer-readable medium that stores a plurality of instructions for execution by at least one computer processor. The instructions include receiving a reflectivity measurement on a semiconductor wafer and generating a reflectivity map based on the received reflectivity measurement.
|Light source apparatus and projector|
A light source apparatus includes a light source unit, a light diffusion element that is provided so as to be rotated about a predetermined rotation shaft and includes a plurality of diffusion regions which are consecutively formed around the rotation shaft, and a motor that rotates the light diffusion element so that a region on which light from the light source unit is incident in the light diffusion element is moved between the plurality of diffusion regions. The plurality of diffusion regions include a first diffusion region, and a second diffusion region which has diffusion characteristics different from diffusion characteristics of the first diffusion region and is provided so as to be adjacent to the first diffusion region..
|Solid state image pick-up device, and pixel|
A pixel 10 includes a photodiode pd which is provided between a first barrier region 21 forming a first potential barrier b1 and a second barrier region 27 forming a second potential barrier b2, a first floating diffusion region f1 which is provided adjacent to the first barrier region 21, and to which a first electric charge generated in the photodiode pd is transferred, and a second floating diffusion region f2 which is provided adjacent to the second barrier region 27, and into which a second electric charge generated in the photoelectric conversion region pd flows, and in which a part of the flowing-in second electric charge is accumulated. The second potential barrier b2 is lower than the first potential barrier b1..
|Vision testing device with enhanced image clarity|
The vision testing device with an enhanced image clarity for determining good or bad of a testing object by photographing a testing object assembled or mounted during the component assembly process and comparing the photographed image with a previously inputted target image, comprising: a stage part for fixing or transferring the testing object to a testing location; a lighting part for providing lighting to the testing object located on an upper portion of the stage part; a first camera part for obtaining a 2-dimensional image of the testing object located in a center of the lighting part; a plurality of second camera parts placed on a side section of the first camera part; a plurality of grid pattern irradiating parts placed between cameras of the second camera parts; a vision processing unit for reading the image photographed by the first camera part and the second camera parts and determining good or bad of the testing object; a control unit for controlling the stage part, the grid pattern irradiating parts, and the first and second camera parts; and a light diffusion part. The present invention enhances the uniformity of light being irradiated on the surface of the testing object.
|Rotating frame pulsed nuclear magnetic resonance spectroscopy|
An nmr method and apparatus for analyzing a sample of interest applies a static magnetic field together with rf pulses of oscillating magnetic field across a sample volume that encompasses the sample of interest. The rf pulses are defined by a pulse sequence that includes a plurality of measurement segments configured to characterize a plurality of relaxation parameters related to relaxation of nuclear magnetization of the sample of interest.
|Solid-state image pickup device and method for producing the same|
A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.. .
Provided is a semiconductor device in which on-resistance is largely reduced. In a region (2a) of an n type epitaxial layer (2) of the semiconductor device 20, each region between neighboring trenches (3) is blocked with a depletion layer (14) formed around a trench (3) so that a current passage (12) is interrupted, while a part of the depletion layer (14) formed around the trench (3) is deleted so that the current passage (12) is opened.
|Optical analysis device, optical analysis method and computer program for optical analysis using single light-emitting particle detection|
There is provided a way of enabling the discrimination or identification of the kind of a light-emitting particle corresponding to each pulse form signal in the scanning molecule counting method using the optical measurement by the confocal or multiphoton microscope. In the inventive technique, the position of a light detection region in a sample solution periodically along a predetermined route is moved in measuring the light intensity from the light detection region; and a signal of light from a light-emitting particle is detected individually.
|Lead-free electrochemical galvanic oxygen sensor|
A lead-free, self-corrosion-free electrochemical galvanic oxygen sensor is provided. The preferred sensor includes a container, the container including a lead-free anode, an alkali electrolyte, a carbon platinized with platinum cathode and a nickel wire current collector, wherein the container further includes a diffusion barrier that causes the sensor to operate in the limiting current region..
|Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition|
Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate.
|Water vapour control, which is arranged facing the inside of a building|
Water vapour control, which is arranged facing the inside of a building, comprising a first layer having a water vapour diffusion resistance (sd-value) of 1-5 meters diffusion-equivalent air space width, measured at a relative humidity of an atmosphere surrounding the layer of 30-50%, and having a sd-value of <1 meters diffusion-equivalent air space width, measured at a relative humidity of 60-80%, and a second layer having a sd-value of >0.6 meters diffusion-equivalent air space width, measured at a relative humidity of 80-100%.. .
|Fabric having improved diffusion moisture capability and garments made therefrom|
A fabric is provided having a defined pattern of hydrophobic and hydrophilic regions that extend entirely through the thickness of the fabric so that the defined pattern is identical on the inner and outer surfaces of the fabric. The defined pattern is configured so that the hydrophilic regions are all in communication or interconnected so that moisture, such as perspiration, can wick not only from the inner to the outer surface of the fabric but also throughout the surface of the fabric and in several directions on the fabric so that the surface area of the wetted hydrophilic regions increases.
|State of charge detection device|
The present invention pertains to the detection of the state of charge of a battery, whereby the complex impedance in the diffusion region of the battery is used. An arithmetic device such as a computer determines the slope of the complex impedance at least two different frequencies in the diffusion region of a rechargeable battery when a straight-line approximation has been made.
|Intraocular lens with a proofed surface|
Methods and apparatus for an intraocular lens with a proofed surface are disclosed. The proofed surface functions as a barrier to fluid diffusion inside the material and within vacuoles.
|Intracorporeal gas exchange devices, systems and methods|
A system for intracorporeal gas exchange includes a flexible, rotatable shaft; a plurality of axially spaced agitation mechanisms positioned on the rotatable shaft, such that the rotatable shaft can flex between the axially spaced agitation mechanisms; a plurality of hollow gas permeable fibers adapted to permit diffusion of gas between intracorporeal fluid and an interior of the hollow fibers. The plurality of hollow fibers is positioned radially outward from the agitation mechanisms.
|Semiconductor circuit, d/a converter, mixer circuit, radio communication device, method for adjusting threshold voltage, and method for determining quality of transistor|
According to an embodiment, a semiconductor circuit includes a substrate, a tunnel oxide film, a charge storage film, a blocking layer, and plural nodes. The substrate is made of a semiconductor in which two diffusion layers each serving as either a source or a drain are formed.
|Diffusion-agent composition, method for forming impurity-diffusion layer, and solar cell|
A diffusion-agent composition including a borate ester (a); a polyhydric alcohol (b) represented by general formula (1); and an alkoxysilane compound (c). In general formula (1), k represents an integer from 0 to 3, m represents an integer of 1 or more, and r2 and r3 each independently represent a hydrogen atom, a hydroxyl group, a c1-5 alkyl group, or a c1-5 hydroxyalkyl group.
|Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using cmos wells|
Integrated circuits and manufacturing methods are presented for creating diffusion resistors (101, 103) in which the diffusion resistor well is spaced from oppositely doped wells to mitigate diffusion resistor well depletion under high biasing so as to provide reduced voltage coefficient of resistivity and increased breakdown voltage for high-voltage applications.. .
|Methods of trimming nanowire structures|
One illustrative method disclosed herein includes forming an initial nanowire structure having an initial cross-sectional size, performing a doping diffusion process to form an n-type doped region in the initial nanowire structure and performing an etching process to remove at least a portion of the doped region and thereby define a final nanowire structure having a final cross-sectional size, wherein the final cross-sectional size is smaller than the initial cross-sectional size.. .
|3d structured memory devices and methods for manufacturing thereof|
A 3d structured nonvolatile semiconductor memory devices and methods for manufacturing are disclosed. One such device includes an n+ region at a source/drain region; a p+ region at the source/drain region; and a diffusion barrier material between the n+ region and the p+ region.
|P-type diffusion layer forming composition|
The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment..
The invention relates to a gas-diffusion electrode provided with a sintered and cast gas-diffusion layer having a high elastic modulus. The electrode is useful as hydrogen-consuming anode or oxygen-consuming cathode of depolarised electrolytic cells such as electrowinning, chlor-alkali or electrodialysis cells..
|Diffusion globe led lighting device|
Disclosed is a lighting fixture that provides approximately even illumination across a planar surface. Also enclosed is an led light for producing the same.
|Light unit and a lcd liquid crystal display comprising the light unit|
Provided is a light unit including a plurality of led light sources formed on a pcb, a resin layer stacked on the pcb to diffuse and guide emitted light forwards, and a diffusion plate having an optical pattern printed thereon to shield light emitted from the led light sources. The optical pattern is composed of a diffusion pattern implemented as at least one layer, or a combination of the diffusion pattern layer and a light shielding pattern.
|Direct backlight module and liquid crystal display module using the backlight module|
The present invention provides a direct backlight module and a liquid crystal display module using the backlight module. The backlight module includes a backplane, a diffusion platen arranged inside the backplane, and backlight sources mounted to the backplane and located under the diffusion plate.
|Shared readout low noise global shutter image sensor method|
A method for operating a global shutter image sensor includes performing both a global shutter (image capture) operation and a rolling shutter (readout) operation. During the global shutter operation, image information (charges) are captured by photodiodes in every pixel, and then simultaneously transferred to charge coupled gate (ccg) devices provided in each pixel.
|Shared readout low noise global shutter image sensor|
A global shutter image sensor includes an array of pixel groups arranged in rows and columns, each pixel group including four pixels and a shared readout circuit having a floating diffusion. Each pixel includes a photodiode, a transfer gate and a charge coupled gate (ccg) device.
|Methods and apparatus to render colors to a binary high-dimensional output device|
Disclosed are methods and apparatus for color rendering in a binary high-dimensional output device, for example. The methods and apparatus are configured to receive color space data, and then map the received data to an intermediate color space.
|Estimating molecular size distributions in formation fluid samples using a downhole nmr fluid analyzer|
A method for estimating a property of subsurface material includes extracting a sample of the material using a downhole formation tester and performing a plurality of nuclear magnetic resonance (nmr) measurements on a sensitive volume in the sample where each measurement in the plurality is performed in a static homogeneous magnetic field with a pulsed magnetic field gradient that is different in magnitude from other nmr measurements to provide a waveform signal. The method further includes transforming each received waveform signal from a time domain into a frequency domain and comparing the frequency domain signal to a reference to provide proton chemical-shift information related to a chemical property of one or more molecules in the sample and transforming the frequency domain signals into a complex number domain that quantifies waveform signal amplitude changes to provide one or more diffusion rates with each diffusion rate being associated with a corresponding frequency..
|Method for producing microcellular foam polypropylene thick board|
Disclosed is a method for producing a microcellular foam polypropylene thick board, by foaming a polypropylene motherboard by a flat foaming equipment, wherein the polypropylene motherboard bears a core structure and a pore canal structure in the core of the foam polypropylene motherboard, shortening a diffusion path of supercritical carbon dioxide into a polypropylene matrix, thus reducing the saturation time required for diffusion equilibrium and significantly increasing the production efficiency. Also provided is a method for preparing the foam polypropylene motherboard bearing the pore canal structure in the core, by extrusion molding, from general polypropylene as the raw material.
|Semiconductor device and method for manufacturing semiconductor device|
During the production of a semiconductor device having a cu wiring line of a damascene structure, diffusion of fluorine from a cf film that serves as an interlayer insulating film is prevented in cases where a heat treatment is carried out, thereby suppressing increase in the leakage current. A semiconductor device of the present invention having a damascene wiring structure is provided with: an interlayer insulating film (2) that is formed of, for example, a fluorine-added carbon film; and a copper wiring line (4) that is embedded in the interlayer insulating film.
|Substrate having a charged zone in an insulating buried layer|
A substrate comprises a base wafer, an insulating layer over the base wafer, and a top semiconductor layer over the insulating layer on a side thereof opposite the base wafer. The insulating layer comprises a charge-confining layer confined on one or both sides with diffusion barrier layers, wherein the charge-confining layer has a density of charges in absolute value higher than 1010 charges/cm2.
|Depth pixel included in three-dimensional image sensor, three-dimensional image sensor including the same and method of operating depth pixel included in three-dimensional image sensor|
A depth pixel of a three-dimensional image sensor includes a first photo gate which is turned on/off in response to a first photo control signal, a first photo detection area configured to generate first charges based on a received light reflected from a subject when the first photo gate is turned on, a first transmission gate which is turned on/off in response to a first transmission control signal, a first floating diffusion area configured to accumulate the first charges generated from the first photo detection area when the first transmission gate is turned on, and a first compensation unit configured to generate second charges which are different from the first charges based on ambient light components included in the received light to supply the second charges to the first floating diffusion area.. .
|Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device|
Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device are disclosed. The techniques may be realized as a semiconductor memory device.
|Semiconductor device and method of manufacturing the same|
In one embodiment, a semiconductor device includes a first diffusion layer of a first conductivity type and a second diffusion layer of a second conductivity type that are provided in a semiconductor layer at a distance, the second conductivity type being an opposite conductivity type of the first conductivity type, a first insulating film and a second insulating film that are provided on the semiconductor layer between the first diffusion layer and the second diffusion layer at a distance, a gate electrode provided on the first insulating film, and a threshold regulating electrode provided on the second insulating film.. .
A standard cell has gate patterns extending in y direction and arranged at an equal pitch in x direction. End portions of the gate patterns are located at the same position in y direction, and have an equal width in x direction.
|Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor light emitting element|
A nitride semiconductor light emitting element is provided with: a substrate; a nitride semiconductor laminate section on the substrate; a current diffusion layer that is provided on the nitride semiconductor laminate section; a first protection film that is provided on the current diffusion layer; and a first electrode. The nitride semiconductor laminate section has: a first conductivity-type nitride semiconductor layer that is provided on the substrate; an active layer that is provided on the first conductivity-type nitride semiconductor layer; and a second conductivity-type nitride semiconductor layer that is provided on the active layer.