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Date/App# patent app List of recent Dielectric Film-related patents
04/17/14
20140105647
 Surface-emitting laser device, surface-emitting laser array, optical scanning apparatus and image forming apparatus patent thumbnailnew patent Surface-emitting laser device, surface-emitting laser array, optical scanning apparatus and image forming apparatus
A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions..
04/17/14
20140103540
 Cooling channels in 3dic stacks patent thumbnailnew patent Cooling channels in 3dic stacks
An integrated circuit structure includes a die including a semiconductor substrate; dielectric layers over the semiconductor substrate; an interconnect structure including metal lines and vias in the dielectric layers; a plurality of channels extending from inside the semiconductor substrate to inside the dielectric layers; and a dielectric film over the interconnect structure and sealing portions of the plurality of channels. The plurality of channels is configured to allow a fluid to flow through..
04/17/14
20140103383
 Light emitting device patent thumbnailnew patent Light emitting device
A light emitting device is provided with a base member, an interconnect pattern disposed on an upper surface of the base member, a light reflecting layer comprising a first layer disposed on a part of the interconnect pattern and formed from a metal material, and a second layer made of a dielectric multilayer reflecting film made with stacked layers of dielectric films having different refractive indices and covering an upper surface and side surfaces of the first layer, a light emitting element chip fixed so as to face at least a part of the light reflecting layer, and a light transmissive sealing member sealing the light reflecting layer and the light emitting element chip.. .
04/10/14
20140099796
 Method for developing low dielectric constant film and devices obtained thereof patent thumbnailMethod for developing low dielectric constant film and devices obtained thereof
A method for porogen removal of porous sioch film is provided, as well as devices obtained thereof. The devices and associated methods are in the field of advanced semiconductor interconnect technology, and more in particular in the development of dielectric films with low-k value..
04/10/14
20140096824
 Process and structures for fabrication of solar cells patent thumbnailProcess and structures for fabrication of solar cells
Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness.
04/03/14
20140092353
 Display device and electronic equipment patent thumbnailDisplay device and electronic equipment
In this display device, an electrode layer for an upper electrode and a lower electrode is formed on an array substrate via a dielectric film, one of the upper electrode and the lower electrode is a pixel electrode, the other thereof is a common electrode, and an opening portion for generating horizontal electric field in a liquid crystal layer is formed in accordance with a shape of the electrode layer in a plan view. A cf substrate has a light-shielding film (bm) including a lateral bm portion.
03/27/14
20140087089
 Methods for hardening amorphous dielectric films in a magnetic head and other structures patent thumbnailMethods for hardening amorphous dielectric films in a magnetic head and other structures
A method in one embodiment includes exposing a side of a dielectric layer to a beam of charged particles for converting an amorphous component of at least a portion of a dielectric layer to a crystalline state, wherein the side of the dielectric layer of extends between adjacent layers. Another method includes forming a dielectric overcoat on a media facing side of a plurality of thin films, the thin films having at least one transducer formed therein; and exposing at least a portion of the overcoat to a beam of charged particles for converting an amorphous component of the dielectric overcoat of the thin films to a crystalline state.
03/20/14
20140080324
 Multi-station sequential curing of dielectric films patent thumbnailMulti-station sequential curing of dielectric films
The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which uv intensity, wafer substrate temperature and other conditions may be independently modulated in each operation.
03/13/14
20140073144
 Low cost flowable dielectric films patent thumbnailLow cost flowable dielectric films
A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma.
03/13/14
20140073136
 Semiconductor device manufacturing method patent thumbnailSemiconductor device manufacturing method
According to one embodiment, a semiconductor device manufacturing method comprises forming an interlayer dielectric film on a semiconductor substrate, forming a film on the interlayer dielectric film to cover a recess and projection formed on a surface of the interlayer dielectric film, polishing the film by cmp to expose the interlayer dielectric film, and etching the film and the interlayer dielectric film such that etching rates of the film and the interlayer dielectric film are equal.. .
03/13/14
20140073090
Semiconductor device having low dielectric insulating film and manufacturing method of the same
A semiconductor device includes a semiconductor substrate on which a structure portion is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films and wiring lines, the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° c. Or higher.
03/13/14
20140070325
Semiconductor device and method for fabricating the same
A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film.. .
03/13/14
20140070209
Semiconductor device
A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided.
03/06/14
20140065784
Methods of fabricating a semiconductor device with capacitors using mold structure and protection layer
A method of fabricating a semiconductor device with capacitors may include forming a mold structure on a lower structure, patterning the mold structure to form a plurality of holes exposing the lower structure, forming a protection layer on sidewalls of the mold structure exposed by the holes, forming lower electrodes in the holes provided with the protection layer, removing the mold structure to expose the protection layer, removing the protection layer to expose sidewalls of the lower electrodes, and sequentially forming a dielectric film and an upper electrode on the lower electrodes.. .
03/06/14
20140061929
Semiconductor device and manufacturing method thereof
A semiconductor device according to the present embodiment includes a semiconductor substrate. A lower-layer wiring is provided above a surface of the semiconductor substrate.
03/06/14
20140061813
Semiconductor device and method for fabricating the same
A semiconductor device includes a semiconductor substrate including a first region and a second region, a first high-k dielectric film pattern on the first region, a second high-k dielectric film pattern on the second region and having the same thickness as the first high-k dielectric film pattern. First and second work function control film patterns are positioned on the high-k dielectric film patterns of the first region.
03/06/14
20140061654
Semiconductor device
A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, and a pixel electrode electrically connected to the transistor.
03/06/14
20140061636
Semiconductor device
A semiconductor device having a high aperture ratio, including a capacitor with increased capacitance, and consuming low power is provided. The semiconductor device includes pixels defined by x (x is an integer of 2 or more) scan lines and y (y is an integer of 1 or more) signal lines, and each of the pixels includes a transistor, and a capacitor.
02/27/14
20140057432
Semiconductor device including copper wiring and via wiring having length longer than width thereof and method of manufacturing the same
A method for manufacturing a semiconductor device includes forming a first interconnect over the semiconductor substrate; forming an interlayer dielectric film over the first interconnect; forming a hole in the interlayer dielectric film such that the hole reaches the first interconnect; forming a trench in the interlayer dielectric film; and embedded a conductive film in the hole and the trench, thereby a via is formed in the hole and a second interconnect in the trench, wherein, in a planar view, the first interconnect extends in a first direction, wherein, in a planar view, the second interconnect extends in a second direction which is perpendicular to the first direction, and wherein a maximum width of the via in the second direction is larger than a maximum width of the via in the first direction.. .
02/27/14
20140054782
Method for fabricating semiconductor device and semiconductor device
A method for fabricating a semiconductor device according to an embodiment, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a high melting metal film on a side wall and a bottom surface of the opening; forming a seed film of copper (cu) on the high melting metal film; performing nitriding process after the seed film is formed; and performing electroplating process, in which a cu film is buried in the opening while energizing the seed film after performing nitriding process.. .
02/20/14
20140051264
Flowable films using alternative silicon precursors
Methods of depositing initially flowable dielectric films on substrates are described. The methods include introducing silicon-containing precursor to a deposition chamber that contains the substrate.
02/20/14
20140050032
Semiconductor memory device
A semiconductor memory device according to one embodiment of the present invention includes a dielectric film configured to store information depending on presence or absence of a conductive path therein, and a plurality of electrodes provided to contact a first surface of the dielectric film. The conductive path can be formed between two electrodes arbitrarily selected form the plurality of electrodes.
02/20/14
20140048885
Dual workfunction semiconductor devices and methods for forming thereof
Embodiments of the invention provide dual workfunction semiconductor devices and methods for manufacturing thereof. According to one embodiment, the method includes providing a substrate containing first and second device regions, depositing a dielectric film on the substrate, and forming a first metal-containing gate electrode film on the dielectric film, wherein a thickness of the first metal-containing gate electrode film is less over the first device region than over the second device region.
02/20/14
20140048863
Semiconductor device and method for fabricating semiconductor device
A semiconductor device including a first dielectric film, a floating gate portion, second and third dielectric films, a control gate portion, and a recess on the side face of the floating gate portion. The second dielectric film for element isolation is embedded between a height position of a lower portion of the side face of the floating gate portion and a height position inside the semiconductor substrate.
02/20/14
20140048862
Semiconductor device and method for fabricating semiconductor device
A semiconductor device according to an embodiment, includes a first dielectric film, a floating gate, a second dielectric film, and a third dielectric film. The first dielectric film is formed above a semiconductor substrate.
02/13/14
20140045291
Solid-state image pick-up device and manufacturing method thereof, image-pickup apparatus, semiconductor device and manufacturing method thereof, and semiconductor substrate
A solid-state image pick-up device is provided which includes a semiconductor substrate main body which has an element forming layer and a gettering layer provided on an upper layer thereof; photoelectric conversion elements, each of which includes a first conductive type region, provided in the element forming layer; and a dielectric film which is provided on an upper layer of the gettering layer and which induces a second conductive type region in a surface of the gettering layer.. .
02/13/14
20140042443
Semiconductor device
A semiconductor device including a capacitor with increased charge capacity and having a high aperture ratio and low power consumption is provided for a semiconductor device including a driver circuit. The semiconductor device includes a driver circuit which includes a first transistor including gate electrodes above and below a semiconductor film so as to overlap with the semiconductor film; a pixel which includes a second transistor including a semiconductor film; a capacitor which includes a dielectric film between a pair of electrodes in the pixel; and a capacitor line electrically connected to one of the pair of electrodes.
02/13/14
20140042432
Semiconductor device
A semiconductor device in which charge capacity of a capacitor is increased without a reduction in aperture ratio is provided. In a transistor including a light-transmitting semiconductor film and a capacitor in which a dielectric film is provided between a pair of electrodes, the pair of electrodes and the dielectric film are formed using a light-transmitting material.
02/06/14
20140035086
Solid-state image sensor
A solid-state image sensor includes a semiconductor layer having photoelectric conversion portions, and a wiring structure arranged on a side of a first face of the semiconductor layer, and receives light from a side of a second face of the semiconductor layer. The wiring structure includes a reflection portion having a reflection surface reflecting light transmitted through the semiconductor layer from the second face toward the first face, toward the semiconductor layer, and an insulation film located between the reflection surface and the first face.
02/06/14
20140034954
Semiconductor device
To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film.
01/30/14
20140030865
Method of manufacturing semiconductor device having cylindrical lower capacitor electrode
To provide a semiconductor device including: plural capacitors each including a cylindrical lower electrode having an internal wall and an external wall, and an upper electrode that covers the external wall of the lower electrode via a capacitance dielectric film; and a supporting film having a buried portion buried in an internal region surrounded by the internal wall of the lower electrode, and a supporting portion a part of which is positioned within the internal region and remaining parts of which are positioned at outside of the internal region. The supporting portion sandwiches an upper end of the lower electrode at both ends of the upper end by covering the internal wall and the external wall of the upper end of the lower electrode..
01/30/14
20140027150
High speed transmission cable
The present invention relates to a high speed transmission cable (100a) that includes a first conductor set (110), a dielectric film (120a) at least partially concentrically disposed around the first conductor set (110) and a pinched portion (150a) forming an insulating envelope (140a) around the first conductor set (110). The dielectric film (120a) includes a base layer (122) having a plurality of first protrusions (124) formed on a first major surface of the base layer (122), wherein the dielectric film (120a) is disposed such that the base layer (122) is partially concentric with the conductor set (110) and wherein a portion of the first protrusions (124) is disposed between the first conductor set (110) and the base layer (122) in a region where the base layer (122) is concentric with the first conductor set (110)..
01/23/14
20140024220
Method of fabricating an ultra low-k dielectric self-aligned via
Methods of fabricating ultra low-k dielectric self-aligned vias are described. In an example, a method of forming a self-aligned via (sav) in a low-k dielectric film includes forming a trench pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate.
01/23/14
20140022697
Metallized film and metallized film capacitor using same
A metallized film composed of a dielectric film, a metal thin film layer and a dielectric layer, the metal thin film layer being formed on at least one surface of the dielectric film, the dielectric layer being formed on the metal thin film layer, and the dielectric layer being composed of acrylic acid ester resin as a main component being composed of dimethylol tricyclodecane diacrylate and monoacrylate containing a heterocycle. .
01/23/14
20140021556
Spacer shaper formation with conformal dielectric film for void free pmd gap fill
An integrated circuit may be formed by removing source/drain spacers from offset spacers on sidewalls of mos transistor gates, forming a contact etch stop layer (cesl) spacer layer on lateral surfaces of the mos transistor gates, etching back the cesl spacer layer to form sloped cesl spacers on the lateral surfaces of the mos transistor gates with heights of ¼ to ¾ of the mos transistor gates, forming a cesl over the sloped cesl spacers, the mos transistor gates and the intervening substrate, and forming a pmd layer over the cesl.. .
01/23/14
20140021555
Manufacturing method of semiconductor device and semiconductor device
A manufacturing method of a semiconductor device according to an embodiment includes forming element isolation regions and active areas on a surface of a semiconductor substrate. A plurality of gate electrodes are formed above the active areas.
01/16/14
20140017908
Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment
A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and/or holes and a portion of the film deposited on top and bottom surfaces of the trenches and/or holes.. .
01/16/14
20140017898
Method of patterning a low-k dielectric film
Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer.
01/16/14
20140017895
Method to reduce dielectric constant of a porous low-k film
Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent.
01/16/14
20140017493
High speed transmission cable
The present invention relates to a high speed transmission cable (100) that includes a first inner conductor (110) and a dielectric film (120) that is concentrically arranged around at least a portion of the first conductor (110). The dielectric film (120) has a base layer (122) including a plurality of first protrusions (124) and second protrusions (126) formed on a first major surface of the base layer (122), wherein the first protrusions (124) and the second protrusions (126) are different from one another.
01/16/14
20140016176
Hydrophobic dielectric film for electrowetting
A hydrophobic dielectric film for electrowetting, which can drive a conductive liquid by using a low voltage and containing a vinylidene fluoride based polymer.. .
01/09/14
20140011349
Method for manufacturing semiconductor device
The present invention relates to a method for manufacturing a heterojunction semiconductor device including an algan layer, the method including the steps of (a) forming a dummy electrode in a region where a gate electrode is arranged on the algan layer, (b) depositing a dielectric film on the algan layer by exposing side surfaces of the dummy electrode, using a device having anisotropy, (c) forming an opening in the dielectric film by removing the dummy electrode, and (d) forming the gate electrode that extends from inside the opening onto the dielectric film in a vicinity of the opening.. .
01/09/14
20140010708
Plasma generator, and plasma generating method
The present invention obtains both the feature of deodorizing by means of active species and the feature of killing floating and attached bacteria by releasing the active species to the exterior of a device. The present invention is provided with a pair of electrodes (21, 22), electrode (21) being arranged with the dielectric film (21a) on the surface facing electrode (22) and electrode (22) being arranged with dielectric film (22a) on the surface facing electrode (21), wherein plasma is discharged when a predetermined voltage is applied between the electrodes (21, 22).
01/09/14
20140009865
Metallized film capacitor and case mold type capacitor including same
A metallized film capacitor includes a dielectric film and two metal vapor-deposition electrodes facing each other across the dielectric film. At least one of the metal vapor-deposition electrodes is made of substantially only aluminum and magnesium.
01/09/14
20140009036
Piezoelectric device and method for manufacturing piezoelectric device
In a method for manufacturing a piezoelectric device, a silicon oxide film is deposited by sputtering on a surface of a single-crystal piezoelectric substrate closer to an ion-implanted region, and a silicon nitride film is deposited by sputtering on a surface of the dielectric film opposite to a side thereof closer to the single-crystal piezoelectric substrate. The silicon oxide film has a composition that is deficient in oxygen relative to the stoichiometric composition.
01/02/14
20140004711
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes forming a first-conductivity-type well and a second-conductivity-type well in a silicon substrate; stacking a first high-dielectric-constant insulating film and a first cap dielectric film above the silicon substrate; removing at least the first cap dielectric film from above the second-conductivity-type well; conducting a first annealing at a first temperature to cause an element included in the first cap dielectric film to diffuse into the first high-dielectric-constant insulating film disposed above the first-conductivity-type well; after the first annealing, stacking a second high-dielectric-constant insulating film and a second cap dielectric film above the silicon substrate; removing the second cap dielectric film disposed above the first-conductivity-type well; and conducting a second annealing at a second temperature lower than the first temperature to cause an element included in the second cap dielectric film to diffuse into the second high-dielectric-constant insulating film disposed above the second-conductivity-type well.. .
01/02/14
20140004364
Dielectric film and transducer including the same
A dielectric film of the present invention includes an elastomer and barium titanate particles with a crystallinity of 80% or more. The elastomer and each of the barium titanate particles each have a functional group, the functional groups can react with each other, and through the reaction of the functional groups, a cross-linked structure with the elastomer and the barium titanate particles is formed.
01/02/14
20140004358
Low k carbosilane films
Low k dielectric films/layers can be produced by cross-linking oligomers made from cyclic carbosilane monomers. The films may exhibit high porosity and strong resistance to chemical attack while also exhibiting improved hydrophobicity.
01/02/14
20140003994
Plasma generating device, plasma generating method, and method for suppressing ozone generation
The purpose of the present invention is to minimize ozone production while increasing the production of an active species. The plasma generating device (100) comprises: a pair of electrodes (21, 22) in which dielectric films (21a, 21b) are disposed on at least one opposing face; voltage application means (4) for applying a pulse voltage across the electrodes (21, 22) to bring about a plasma discharger; and fluid circulation holes (21b, 22b) that are disposed in locations corresponding to the electrodes (21, 22), respectively, and that are configured to pass entirely therethrough.
01/02/14
20140002976
Recessed bottom-electrode capacitors and methods of assembling same
A capacitor-over-bitline structure includes a bottom electrode that has an open vessel form factor. The bottom-electrode form factor includes a floor, rectilinear sidewalls, and a rim that defines the topmost feature.
01/02/14
20140002954
Humidity resistant electronic components
A capacitor having improved tolerance to humidity. The capacitor includes a packaging material and/or a dielectric material comprising a film having a water vapor transmission rate significantly lower than the dielectric films and/or packaging films used in conventional capacitors..
01/02/14
20140002790
Multiple state electroactive ophthalmic device
A variable focus ophthalmic device is described. The device comprises a front curve optical portion of the variable focus ophthalmic device comprising a front curve top optical surface and a front curve bottom optical surface and a back curve optical portion of the variable focus ophthalmic device comprising a back curve top optical surface and a back curve bottom optical surface.
01/02/14
20140002789
Variable focus electroactive ophthalmic device
A variable focus ophthalmic device is described. The device comprises a front curve optical portion of the variable focus ophthalmic device comprising a front curve top optical surface and a front curve bottom optical surface and a back curve optical portion of the variable focus ophthalmic device comprising a back curve top optical surface and a back curve bottom optical surface.
01/02/14
20140001919
Elastic wave element
An elastic wave element includes a piezoelectric substrate, an idt electrode, and a first dielectric film. The idt electrode includes a first bus bar electrode, a second bus bar electrode, first electrode fingers, and second electrode fingers.
01/02/14
20140001154
Plasma processing apparatus and plasma processing method
In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.. .
12/26/13
20130344704
Enhancement in uv curing efficiency using oxygen-doped purge for ultra low-k dielectric film
Embodiments of the invention provide methods for curing an ultra low-k dielectric film within a uv processing chamber. In one embodiment, the method includes depositing an ultra low-k dielectric layer on a substrate in a deposition chamber, and subjecting the deposited ultra low-k dielectric layer to a uv curing processes in a uv processing chamber.
12/26/13
20130344703
Film forming method and film forming apparatus
In a film forming method, a coating composition containing film components is coated on a plastic substrate to form a coating film. By irradiating electromagnetic waves to the coating film, the coating film is dried and/or modified to form a film.
12/26/13
20130344248
Method for depositing dielectric films
A method is provided for depositing a dielectric film on a substrate. According to one embodiment, the method includes providing the substrate in a process chamber, exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate, exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate, generating a hydrogen halide gas in the process chamber by a decomposition reaction of a hydrogen halide precursor gas, and exposing the dielectric film to the hydrogen halide gas to remove contaminants from the dielectric film..
12/26/13
20130342966
Solid electrolytic capacitor and method of producing same
To provide a solid electrolytic capacitor capable of high performance, the capacitor including: an anode element made of tantalum or niobium; a dielectric film disposed on the anode element; and a solid electrolytic layer disposed on the dielectric film, the dielectric film including: a first dielectric film made of an oxide of the tantalum or niobium, formed on a surface of the anode element; and a second dielectric film made of a composite metal oxide having a perovskite structure, formed on the first dielectric film.. .
12/26/13
20130341760
Semiconductor device
A semiconductor device includes first and second wells formed side by side as impurity diffusion regions of a first conductive type in a semiconductor substrate, below an intermediate dielectric film that covers a major surface of the substrate. A conductive layer formed above the intermediate dielectric film is held at a potential.
12/19/13
20130337586
Polishing method
A method of polishing a substrate includes: performing a first polishing process of bringing the substrate into sliding contact with a polishing pad on a first polishing table to polish a metal film; performing a second polishing process of bringing the substrate into sliding contact with a polishing pad on a second polishing table to polish the metal film until a conductive film is exposed; performing a third polishing process of bringing the substrate into sliding contact with a polishing pad on a third polishing table to polish at least the conductive film; and performing a fourth polishing process of bringing the substrate into sliding contact with a polishing pad on a fourth polishing table to polish at least a dielectric film.. .
12/19/13
20130337583
Method for repairing damage of dielectric film by cyclic processes
A method for repairing process-related damage of a dielectric film includes: (i) adsorbing a first gas containing silicon on a surface of the damaged dielectric film without depositing a film in the absence of reactive species, (ii) adsorbing a second gas containing silicon on a surface of the dielectric film, followed by applying reactive species to the surface of the dielectric film, to form a monolayer film thereon, and (iii) repeating step (ii). The duration of exposing the surface to the first gas in step (i) is longer than the duration of exposing the surface to the second gas in step (ii)..
12/19/13
20130334661
Semiconductor device, manufacturing method of the semiconductor device
A two-layered polysilicon capacitive element is manufactured to enable suppression of both of an increase in the applied electric field dependence of the capacitance value and the initial defect of the dielectric film. Included are a lower electrode into which phosphorous ions are implanted, a dielectric film formed on the lower electrode, and an upper electrode formed on the dielectric film.
12/12/13
20130330933
Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control
A method of forming a dielectric film having si—c bonds and/or si—n bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a si-containing precursor and a reactant gas; and (ii) before or after step (i), applying a pulse of rf power to the reaction space while supplying a rare gas and a treatment gas without supplying a si-containing precursor, whereby a dielectric film having si—c bonds and/or si—n bonds is formed on the semiconductor substrate.. .
12/12/13
20130329335
Capacitor
A capacitor is provided, which allows a user to readily change or adjust its capacitance value. The capacitor includes a dielectric film, which includes first and second conductor layers disposed on opposite surfaces thereof, and which is wound into a rod shape.
12/05/13
20130320813
Dielectric device
A dielectric device has a first electrode film having a non-oriented or amorphous structure, a dielectric film provided on the first electrode film and having a preferentially oriented structure, and a second electrode film provided on the dielectric film and having a non-oriented or amorphous structure.. .
11/28/13
20130314839
Film capacitor element, film capacitor, and method of producing the film capacitor element
A film capacitor element including a base dielectric film layer 12, a vapor-deposition metal film layer 14 formed on the base dielectric film layer 12 and consisting of a first film portion 20 and a second film portion 22 that are spaced apart from each other by a margin portion 18, and a dielectric covering film layer 16 which is formed integrally on the second film portion 22 by vapor-deposition polymerization or coating and which has a covering portion 30 which fills the margin portion 18 and covers an entire area of an end face of the second film portion 22 on the side of the margin portion 18. The first film portion 20 including a non-covered portion 34 which is not covered by the dielectric covering film layer 16..
11/28/13
20130314838
Capacitive device and method for fabricating the same
A capacitive device includes a first capacitor including a first wiring layer, a first dielectric film, a first conductive layer, a first insulating layer on the first capacitor, a second capacitor on the first insulating layer including a second conductive layer, a second dielectric film, and a third conductive layer, a second insulating layer on the second capacitor, a second wiring layer on the second insulating layer including first and second connection wires, a first via connecting the first wiring layer to the second conductive layer, a second via connecting the third conductive layer to the second wiring layer, a third via connecting the first connection wire to the first conductive layer, and a fourth via connecting the second connection wire to the first wiring layer.. .
11/14/13
20130300001
Semiconductor device
The semiconductor device according to the present invention includes a semiconductor layer, an interlayer dielectric film formed on the semiconductor layer, a wire formed on the interlayer dielectric film with a metallic material to have a width of not more than 0.4 μm, and a broad portion integrally formed on the wire to extend from the wire in the width direction thereof.. .
11/14/13
20130299948
Semiconductor device
A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in which an interconnect and a plug connected to the interconnect are integrated is formed in at least one of the dielectric films in the chip region.
11/07/13
20130293062
Dielectric film, method for manufacturing the same, and transducer including the same
A dielectric film includes an elastomer, and metallic oxide particles having a particle diameter of 100 nm or less that are chemically bonded to the elastomer and are dispersed in the elastomer in a state of primary particles. A method for manufacturing the dielectric film includes: a chelating process of adding a chelating agent to an organometallic compound to produce a chelate compound of the organometallic compound; a sol manufacturing process of adding an organic solvent and water to the chelate compound to obtain a sol of metallic oxide particles produced by the hydrolytic reaction of the organometallic compound; a mixed solution preparing process of mixing the sol of the metallic oxide particles and a polymer solution containing a rubber polymer having functional groups that optionally react with hydroxy groups; and a film forming process of applying the mixed solution onto a substrate, and curing the resultant coating film..


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Dielectric Film topics: Dielectric Film, Semiconductor Device, Semiconductor, Electronic Apparatus, Laser Array, Transistors, Memory Cells, Display Panel, Random Access, Memory Cell, Flash Memory, Sequencing, Field Effect Transistor, Phase Change Memory, Memory Device

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