|| List of recent Dielectric Constant-related patents
|Low dielectric glass and fiber glass|
Glass compositions are provided that are useful in a variety of applications including, for example, electronics applications, reinforcement applications, and others. Some embodiments of glass compositions can provide desirable dielectric constants, desirable dissipation factors, and/or desirable mechanical properties while also having desirable fiber forming properties..
|Method for manufacturing a metal-insulator-semiconductor (mis) structure for an electroluminescent diode|
A method for manufacturing a structure comprising a substrate made of at least one n-type semiconducting metal oxide is disclosed. In one aspect, the method comprises providing a substrate made of at least one n-type semiconducting metal oxide selected from the group consisting of: zno, cdo, mgo, znmgo, and zncdo, wherein the doping rate of which is less than or equal to 1018/cm3.
|Combiner for an rf power amplifier|
Embodiments of the invention include a combiner for an rf amplifier comprising wiring and a transmission line transformer. The transmission line transformer may include a ferrite core having a hole defined therein; a coaxial cable having a first dielectric constant and routed through the hole of the ferrite core; and a stripline having a second dielectric constant and routed around the ferrite core.
|Semiconductor arrangement and formatin thereof|
A semiconductor arrangement and methods of formation are provided. The semiconductor arrangement includes conductive lines having sidewalls angled between about 45° to about 90° relative to a plane in which bottom surfaces of the conductive lines lie.
|Thermoplastic liquid crystal polymer film, and laminate and circuit board using same|
Where ∈r1 denotes the relative dielectric constant before the heating, ∈r2 denotes the relative dielectric constant after the heating. These relative dielectric constants are measured at the same frequency in a range of 1 to 100 ghz..
|Real-time soot measurement in a diesel particulate filter|
Methods and apparatus for detecting the filtering state of a filter, such as a particulate filter. Some embodiments include one or more capacitive sensors that provide a signal corresponding to the filtered state of the filter with a change in measured capacitance.
|Changing effective work function using ion implantation during dual work function metal gate integration|
Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (fet) region and a second-type fet region; forming a metal layer having a first effective work function compatible for a first-type fet over the first-type fet region and the second-type fet region; and changing the first effective work function to a second, different effective work function over the second-type fet region by implanting a species into the metal layer over the second-type fet region..
|Treatment of biological tissues using subnanosecond electric pulses|
A system for treatment of biological tissues is provided. The system includes a lens having a hollow, substantially hemispherical shape with an outer surface and an inner surface, the inner surface defining a substantially hemispherical cavity for inserting the biological tissues.
|Prepregs and laminates having homogeneous dielectric properties|
Resin compositions including one or more base resins and one or more high dielectric constant materials wherein the one or more high dielectric constant materials are present in the resin composition in an amount sufficient to impart the resin composition with a cured dk that matches the dk of the reinforcing material to which the resin composition is to be applied to within plus or minus (±) 15% as well as prepregs and laminates made using the resin compositions.. .
|Dielectric ceramic composition, electronic element, and composite electric element|
In order to provide a dielectric ceramic composition capable of sintering at a low temperature, implementing a low relative dielectric constant, providing other excellent properties (such as a relative density and an insulation resistance), performing co-firing of different materials, and suppressing dispersion of ag in the sintered body when the internal electrode is formed, the dielectric ceramic composition includes a main ingredient containing sio2—k2o—b2o3-based glass of 40 to 65 weight %, quartz of 35 to 50 weight %, and amorphous silica of remaining weight %; and a subsidiary ingredient containing alumina of 1.5 to 4 weight %, k2o-mo—sio2—b2o3-based glass (where “mo” denotes at least any one selected from a group consisting of cao and sro) of 5 to 20 weight % relative to the main ingredient of 100 weight %.. .
|Polymer resin composition, polyimide resin film, preparation method of polyimide resin film, flexible metal laminate, and circuit board|
The present invention is related to a polymer resin composition capable of providing an insulating material having a low dielectric constant and excellent mechanical properties, a polyimide resin film obtained by using the polymer resin composition, a preparation method of a polyimide resin film, and a circuit board and a metal laminate including the polyimide resin film.. .
A semiconductor device includes a first conductivity-type drain layer, a first conductivity-type drift layer formed on the drain layer, a second conductivity-type base layer formed on the drift layer, a first conductivity-type source layer which is selectively formed on a surface of the base layer, a trench region formed through a surface of the source layer such that the trench region reaches the drift layer from the surface of the source layer, a gate electrode formed adjacent to the base layer and inside the trench region, and surrounded by a first insulation film, a field plate electrode formed in the trench region below the gate electrode and surrounded by a second insulation film having a higher dielectric constant than the first insulation film, a drain electrode which is electrically connected to the drain layer, and a source electrode electrically connected to the source layer.. .
|Methods of forming a poruous insulator, and related methods of forming semiconductor device structures|
Semiconductor devices with porous insulative materials are disclosed. The porous insulative materials may include a consolidated material with voids dispersed therethrough.
|Complementary metal oxide heterojunction memory devices and methods for cycling robustness and data retention|
A memory device is disclosed. The memory device comprises a first metal layer and a first metal oxide layer coupled to the first metal layer.
A reflection controller for modifying electromagnetic reflections from a surface includes a conducting patch being positioned proximate to an electromagnetically reflecting surface. The floating conducting patch includes an electrical conductor at a floating potential positioned on a dielectric substrate where at least one of a dielectric thickness, dielectric constant, or the dimensions of the electrical conductor are chosen to reduces retro-reflection of incident radiation..
|Method of producing a high-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure|
A high-voltage-resistant semiconductor component (1) has vertically conductive semiconductor areas (17) and a trench structure (5). These vertically conductive semiconductor areas are formed from semiconductor body areas (10) of a first conductivity type and are surrounded by a trench structure (5) on the upper face (6) of the semiconductor component.
|Ink, ink cartridge and ink jet recording method|
Wherein n means a kind of water or the water-soluble organic solvent, ∈n is a dielectric constant of water or the water-soluble organic solvent represented by n, and rn is a content of water or the water-soluble organic solvent represented by n based on the total mass of the ink.. .
A patch antenna includes a dielectric substrate having a body that extends a thickness from a first side to a second side that is opposite the first side. The body of the substrate has a perimeter that is defined by at least one side wall that extends along the thickness of the substrate from the first side to the second side.
|Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch stop materials|
Upon forming a complex metallization system, the parasitic capacitance between metal lines of adjacent metallization layers may be reduced by providing a patterned etch stop material. In this manner, the patterning process for forming the via openings may be controlled in a highly reliable manner, while, on the other hand, the resulting overall dielectric constant of the metallization system may be reduced, thereby also significantly reducing the parasitic capacitance between stacked metal lines..
|Process for curing low-dielectric constant material|
Provided is a low-dielectric constant material curing process including irradiating a low-dielectric constant material on a semiconductor substrate with ultraviolet rays. In the low-dielectric constant material curing process, the ultraviolet light source is a fluorescent lamp including: a light-emitting tube sealed and filled with a discharge gas containing xenon gas; a pair of electrodes for inducing a discharge in the interior space of the light-emitting tube; a dielectric material being interposed between the interior space and at least one of the pair of electrodes; and a phosphor layer formed on a surface of the light-emitting tube and containing a phosphor that is excited by light generated from the discharge gas by a discharge in the interior space.
|Organic electroluminescence element|
An organic electroluminescent element includes a light-emitting layer between an anode and a cathode. The light-emitting layer contains a phosphorescent light-emitting organic metal complex and at least one host compound.
|Microwave transmission device and microwave transmission system|
There is provided a microwave transmission device including two or more antennas impedance-matched with a contact target having a predetermined dielectric constant. When the impedance matching is achieved, microwaves for tumor detection between the two or more antennas are transmitted via the contact target..
|Electrostatic energy storage device and preparation method thereof|
The present invention discloses an electrostatic energy storage device and a preparation method thereof. The device comprises at least one electrostatic energy storage unit, wherein each electrostatic energy storage unit is provided with a five-layer structure and comprises two metal film electrodes which form a capacitor, composite nano insulating film layers attached to the inner sides of the two metal film electrodes, and a ceramic nano crystalline film arranged between the composite nano insulating film layers.
|Semi-conductive media transport for electrostatic tacking of media|
A semi-conductive media transport is used with an ink jet printing system. A belt is held flat and slides across a conductive platen, causing electrostatic charges on the belt.
Disclosed herein is an inductor including: a substrate; an insulating part provided on the substrate; and a conductive pattern part provided in the insulating part, wherein the insulating part includes first and second insulating parts that are provided at regions physically separated from each other, the first and second insulating parts being made of materials of which at least one of dielectric constant and heat resistance are different. In the inductor according to the present invention, high q and l values may be implemented, and deformation by heat treatment may also be decreased, thereby making it possible to improve reliability..
|Dielectric films comprising silicon and methods for making same|
Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer..
|Organic field-effect transistor|
An organic transistor including at least one lower substrate made of plastic material, two electrodes, respectively a source electrode and a drain electrode, deposited on the plastic substrate, a semiconductor layer made of an organic semiconductor material and deposited on the electrodes and the plastic substrate, a dielectric layer deposited on the semiconductor layer, and a gate electrode formed on said dielectric layer. It further includes a porous layer extending between the plastic substrate and the semiconductor layer, said porous layer extending at least between the source and drain electrodes, to decrease the dielectric constant of the surface of said plastic substrate..
|Advanced low k cap film formation process for nano electronic devices|
A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % c and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen.
|Halogen-free resin composition, copper clad laminate using the same, and printed circuit board using the same|
A halogen-free resin composition includes (a) 100 parts by weight of epoxy resin; (b) 2 to 15 parts by weight of oxydianiline (oda); and (c) 2 to 20 parts by weight of amino triazine novolac (atn) resin. The halogen-free resin composition includes specific ingredients, and is characterized by specific proportions thereof, to thereby achieve a low dielectric constant, a low dielectric dissipation factor, high heat resistance, and high flame retardation, and thus is suitable for producing a prepreg or resin film to thereby be applicable to copper clad laminates and printed circuit boards..
|Resin composition, copper-clad laminate and printed circuit board for use therewith|
A resin composition includes (a) an epoxy resin; (b) a benzoxazine (bz) resin; (c) a styrene maleic anhydride (sma) copolymer; and (d) a polyester. The resin composition includes specific ingredients of a polyester and is characterized by specific proportions thereof so as to achieve a low delta tg value of copper clad laminates manufactured in accordance with the resin composition and attain a low dielectric constant, a low dielectric dissipation factor, high heat resistance, and high fire retardation of the copper clad laminates and printed circuit boards manufactured in accordance with the resin composition..
|Waveguide apparatuses and methods|
Optical fiber waveguides and related approaches are implemented to facilitate communication. As may be implemented in accordance with one or more embodiments, a waveguide has a substrate including a lattice structure having a plurality of lattice regions with a dielectric constant that is different than that of the substrate, a defect in the lattice, and one or more deviations from the lattice.
|Antenna, electronic apparatus with the same, and antenna manufacturing method|
An antenna includes a sintered body block with a predetermined magnetic permeability or a predetermined dielectric constant, the sintered body block having at least one air cavity; and an antenna pattern formed on a surface of the sintered body block.. .
|Semiconductor device having a high-k gate dielectric layer|
A method of fabricating a semiconductor device includes forming a lower interfacial layer on a semiconductor layer, the lower interfacial layer being a nitride layer, forming an intermediate interfacial layer on the lower interfacial layer, the intermediate interfacial layer being an oxide layer, and forming a high-k dielectric layer on the intermediate interfacial layer. The high-k dielectric layer has a dielectric constant that is higher than dielectric constants of the lower interfacial layer and the intermediate interfacial layer..
|Converting a high dielectric spacer to a low dielectric spacer|
A dielectric constant of spacer material in a transistor is changed from a high-κ dielectric material to a low-κ dielectric material. The process uses oxidation treatments to enable the transformation of the high-κ dielectric material to a low-κ dielectric material..
|Deposition of rutile films with very high dielectric constant|
Anisotropic materials, such as rutile tio2, can exhibit dielectric constant of 170 along the tetragonal axis of (001) direction, and dielectric constant of 86 along directions perpendicular to the tetragonal axis. Layer of anisotropic material nanorods, such as tio2 nanorods, can form a seed layer to grow a dielectric layer that can exhibit the higher dielectric constant value in a direction parallel to the substrate surface.
|Lowdielectric resin composition, copper clad laminate using the same, and printed circuit board using the same|
A halogen-free resin composition includes (a) 100 parts by weight of naphthalene epoxy resin; (b) 10 to 100 parts by weight of styrene maleic anhydride copolymer; and (c) 30 to 70 parts by weight of dopo-containing bisphenol f novolac resin. The halogen-free resin composition includes specific ingredients, and is characterized by specific proportions thereof, to thereby attain a low dielectric constant, a low dielectric dissipation factor, high heat resistance, and high flame retardation, and thus is suitable for producing a prepreg or a resin film to thereby be applicable to copper clad laminates and printed circuit boards..
|Insulated ultrafine powder, method for producing same, and high dielectric constant resin composite material|
Provided are an insulated ultrafine powder obtained by adding liquid metal alkoxide to a methanol-containing organic solvent in which a conductive ultrafine powder comprising a carbon material is dispersed and further adding water thereto and a method for producing the same. Also, provided are an insulated ultrafine powder obtained by adding liquid metal alkoxide to a methanol-containing organic solvent in which a conductive ultrafine powder comprising a carbon material is dispersed, further adding a coupling agent having an alkoxide group and then adding water thereto and a method for producing the same.
|Rf filter for an active medical device (amd) for handling high rf power induced in an associated implanted lead from an external rf field|
An rf filter for an active medical device (amd), for handling rf power induced in an associated lead from an external rf field at a selected mri frequency or range frequencies includes a capacitor having a capacitance of between 100 and 10,000 picofarads, and a temperature stable dielectric having a dielectric constant of 200 or less and a temperature coefficient of capacitance (tcc) within the range of plus 400 to minus 7112 parts per million per degree centigrade. The capacitor's dielectric loss tangent in ohms is less than five percent of the capacitor's equivalent series resistance (esr) at the selected mri rf frequency or range of frequencies..
|Interconnect structure and forming method thereof|
An interconnect structure and a forming method thereof are provided. The method includes: providing a semiconductor substrate which has semiconductor devices formed therein; forming a conductive layer on the semiconductor substrate; forming a mask layer on the conductive layer; forming a groove in the mask layer and the conductive layer, the groove having a depth-to-width ratio greater than 0.8; and depositing an intermetallic dielectric layer to cover the mask layer and fill the groove, wherein an air gap is formed in a portion of the intermetallic dielectric layer in the groove.
A semiconductor device and a method of forming the same are disclosed, which forms a low-dielectric-constant oxide film only at a peripheral part of a bit line conductive material, resulting in reduction in parasitic capacitance of the bit line. The semiconductor device includes a bit line formed over a semiconductor substrate, a first spacer formed over sidewalls of the bit line, and a second spacer formed over sidewalls of the first spacer, configured to have a dielectric constant lower than that of the first spacer..
|Electronic chip and method of fabricating the same|
Provided are an electronic chip and a method of fabricating the same. The semiconductor chip may include a substrate, an active device integrated on the substrate, a lower interlayered insulating layer covering the resulting structure provided with the active device, a passive device provided on the lower interlayered insulating layer, an upper interlayered insulating layer covering the resulting structure provided with the passive device, and a ground electrode provided on the upper interlayered insulating layer.
The present invention relates to an improved insulated conductor with a low dielectric constant and reduced materials costs. The conductor (12) extends along a longitudinal axis and an insulation (14, 14<1>) surrounds the conductor (12).
|Semiconductor device with metal gates and method for fabricating the same|
A semiconductor device includes a gate insulation layer formed over a substrate and having a high dielectric constant, a gate electrode formed over the gate insulation layer and a work function control layer formed between the substrate and the gate insulation layer and inducing a work function shift of the gate electrode.. .
|Ceramic filled fluoropolymer compositions, methods and applications thereof|
The present disclosure is in the field of electrical circuits and particularly to circuits characterized by plural conductive paths supported on a non-conductive substrate. The disclosure relates to ceramic filler compositions and methods for preparing said compositions.
|Mobile electronic device comprising a modified sapphire|
An electronic device comprising a cover plate is disclosed. The cover plate comprises at least one layer of modified sapphire having a dielectric constant that is higher than the dielectric constant of sapphire,.
|Touch sensor mechanism and manufacturing method thereof|
A touch sensor mechanism for a touch display device, includes a cover lens made by a transparent material having a dielectric constant greater than 4.5 and a compression strength greater than 700 mpa for generating a finger's touching capacitance (cf) while a user's finger of a user touch thereon; and a sensor device module including a plurality of sensor devices having a sensor parasitic capacitance (cp). The cover lens and the sensor device module are disposed in the touch display device in such a manner that a ratio of a standard deviation value (σu) of the finger's touching capacitance (cf) of the cover lens to the sensor parasitic capacitance (cp) of the sensor device module is a signal-to-noise ratio (snr).
|Gate structure in non-volatile memory device|
A gate structure of a non-volatile memory device and a method of forming the same including a tunnel oxide layer pattern, a charge trap layer pattern, a blocking dielectric layer pattern having the uppermost layer including a material having a first dielectric constant greater than that of a material included in the tunnel oxide layer pattern, and first and second conductive layer patterns. The gate structure includes a first spacer to cover at least the sidewall of the second conductive layer pattern.
|Crosstalk polarity reversal and cancellation through substrate material tuning|
Transmission lines with a first dielectric material separating signal traces and a second dielectric material separating the signal traces from a ground plane. In embodiments, mutual capacitance is tuned relative to self-capacitance to reverse polarity of far end crosstalk between a victim and aggressor channel relative to that induced by other interconnect portions along the length of the channels, such as inductively coupled portions.
|Chip module, an insulation material and a method for fabricating a chip module|
The chip module includes a carrier, a semiconductor chip arranged on or embedded inside the carrier, and an insulation layer that at least partly covers a face of the carrier. The dielectric constant ∈r and the thermal conductivity λ of the insulation layer satisfy the condition λ·∈r<4.0 w·m−1·k−1..
A semiconductor device comprises: a memory cell region having a first transistor and a peripheral circuit region having a second transistor. The first transistor has a first source electrode and a first drain electrode, a first buried gate insulating film which is formed along an inner wall of a trench and whose relative dielectric constant is higher than a relative dielectric constant of silicon oxide, and a buried gate electrode.
|High dielectric nanosheet laminate, high dielectric element and method for producing the same|
A high dielectric nanosheet laminate is produced by laminating nanosheets, each of which has a thickness of 10 nm or less and is formed of an oxide that has a perovskite structure wherein at least four nbo6 octahedrons, tao6 octahedrons or tio6 octahedrons are included in a unit lattice. Consequently, the high dielectric nanosheet laminate is capable of achieving a high dielectric constant and a satisfactory insulation property, which are preferable for high dielectric nanosheet multilayer capacitors or the like, at the same time even if formed very thin..
|Transmitted light control device|
A transmitted light control device 10 includes: a grating substrate 1; a metal thin film 2; a conducting polymer layer 3 made by depositing a conducting polymer on the metal thin film 2; a cell 4 filled with a liquid medium 5 composed of an electrolyte or a buffer solution and configured such that a part of the liquid medium 5 is in contact with the conducting polymer layer 3; and a metal thin film potential control means 6 having a working electrode w connected to the metal thin film 2 and having a counter electrode c and a reference electrode r each connected to the liquid medium 5. The substrate 1 and at least a part of the cell 4 are made of a light transmitting material.
|Method and apparatus for setting gamma reference voltage, driving circuit and display apparatus|
A method and an apparatus for setting a gamma reference voltage, and a driving circuit are provided, which decrease a driving voltage of a display apparatus and reduce power consumption by resetting the gamma reference voltage of the display apparatus. The method comprises: acquiring a dielectric constant of a liquid crystal capacitor according to a first gamma reference voltage (101); acquiring a value of the liquid crystal capacitor according to the dielectric constant of the liquid crystal capacitor(102); acquiring a feedback voltage according to the value of the liquid crystal capacitor, acquiring a second gamma reference voltage according to the feedback voltage, and updating the first gamma reference voltage to the second gamma reference voltage(103).
|Multilayered ceramic capacitor and mounting structure of circuit board having multilayered ceramic capacitor mounted thereon|
There is provided a multilayered ceramic capacitor, including a ceramic body, an active layer including a plurality of first and second internal electrodes alternately exposed through both end surfaces of the ceramic body while having the dielectric layer therebetween, to form capacitance; upper and lower cover layers formed above and below the active layer; first and second external electrodes covering both end surfaces of the ceramic body; a plurality of first and second dummy electrodes extended from the first and second external electrodes; and a plurality of piezoelectric members connecting the first internal electrode and the first dummy electrode or the second internal electrode and the second dummy electrode, inside the active layer, the piezoelectric members having a higher dielectric constant than the dielectric layer.. .
|Sintering of high temperature conductive and resistive pastes onto temperature sensitive and atmospheric sensitive materials|
An method of forming a metal foil coated ceramic and a metal foil capacitor is provided in a method of making a metal foil coated ceramic comprising providing a metal foil; applying a ceramic precursor to the metal foil wherein the ceramic precursor comprises at least one susceptor and a high dielectric constant oxide and an organic binder, and sintering the ceramic precursor with a high intensity, high pulse frequency light energy to form the metal foil ceramic.. .
|Optical element, light source apparatus, and projection-type display apparatus|
An optical element that can reduce the etendue of emitted light emitted from the optical element without having depend on the etendue of light-emitting elements is provided with a plasmon-excitation layer that is interposed between two layers having dielectric properties wherein, taking the plasmon-excitation layer as a border, the effective dielectric constant of the emission-side portion that is the emission layer side is higher than the effective dielectric constant of the incident-side portion that is the side of a carrier-generating layer, and the dielectric constant between the plasmon-excitation layer and the carrier-generating layer is higher than the dielectric constant between the carrier-generating layer and the light-incident surface.. .
|Copper interconnect structure and method for manufacturing the same|
A method is disclosed for manufacturing a semiconductor device with a copper interconnect structure. The method includes providing a substrate, forming a first interconnect dielectric layer on the substrate, and forming a second interconnect dielectric layer on a surface of the first interconnect dielectric layer.
|Dielectric equivalent thickness and capacitance scaling for semiconductor devices|
A device and method for fabricating a capacitive component includes forming a high dielectric constant material over a semiconductor substrate and forming a scavenging layer on the high dielectric constant material. An anneal process forms oxide layer between the high dielectric constant layer and the scavenging layer such that oxygen in the high dielectric constant material is drawn out to reduce oxygen content..
|Apparatus and method for formation dielectric constant and resistivity measurements|
An apparatus for measuring formation resistivity and dielectric constant used with a logging tool includes a tool pad coupled to the logging tool, a pair of receivers deployed on the tool pad including a first receiver and a second receiver, a measuring transmitter deployed on the tool pad and at an axial distance from the pair of receivers, and a compensating transmitter deployed on the tool pad and positioned substantially at the midpoint of the pair of receivers. The compensating transmitter transmits compensating signals to the pair of receivers and the measuring transmitter transmits measuring signals to the pair of receivers.
|Method and apparatus for forming dielectric film of low-dielectric constant and method for detaching porogen|
A method for forming a porous low-k film having an si—o structure includes irradiating infrared light upon a film including a material having an si—o structure, and irradiating ultraviolet light upon the film including the material having the si—o structure such that a porous low-k film including the material having the si—o structure is formed. The irradiating of the infrared light has an irradiation period of infrared light which is set shorter than an irradiation period of ultraviolet light in the irradiating of the ultraviolet light..
|Adhesive agent composition, adhesive agent layer, and adhesive sheet|
A pressure-sensitive adhesive composition of the invention includes a (meth)acryl-based polymer obtained by polymerization of a monomer component including 25% by weight to 99.5% by weight of a cyclic structure-containing monomer and 0.5% by weight to 70% by weight of a branched structure-containing (meth)acryl-based monomer having a branched alkyl group of 3 to 18 carbon atoms at an ester end. The pressure-sensitive adhesive composition has a satisfactory level of adhesive performance and can form a pressure-sensitive adhesive layer with a lower dielectric constant..
|Liquid crystal display device|
A novel liquid crystal display device without a decrease in display quality. The liquid crystal display device includes a pixel for displaying a still image at a frame frequency of less than or equal to 1 hz, and a liquid crystal layer in the pixel has a dielectric constant anisotropy of greater than or equal to 2 and less than or equal to 5.
|Manufacturing method of non-volatile memory|
The present invention provides a manufacturing method of a non-volatile memory including forming a gate dielectric layer on a substrate; forming a floating gate on the gate dielectric layer; forming a first charge blocking layer on the floating gate; forming a nitride layer on the first charge blocking layer; forming a second charge blocking layer on the nitride layer; forming a control gate on the second charge blocking layer; and performing a treatment to the nitride layer to get a higher dielectric constant.. .
|Polyimide porous body and method for producing same|
An object of the present invention is to provide a polyimide porous body having an excellent heat resistance, a fine cell structure, and a low relative dielectric constant, and a method for producing the polyimide porous body. The present invention relates to a method for producing a polyimide porous body, comprising a step for applying a polymer solution containing a polyamide acid, a phase separation agent for separating the phases of the polyamide acid, an imidization catalyst, and a dehydrating agent, on a substrate, and drying the polymer solution to produce a phase-separated structure body having a microphase-separated structure; a step for producing a porous body by removing the phase separation agent from the phase-separated structure body; and a step for subjecting the polyamide acid in the porous body to imidization to synthesize a polyimide..
|Semiconductor device including low-k dielectric cap layer for gate electrodes and related methods|
A semiconductor device may include a substrate, source and drain regions in the substrate, a recessed epitaxial channel layer in the substrate between the source and drain regions, and a high-k gate dielectric layer overlying the recessed epitaxial channel layer. The semiconductor device may further include a gate electrode overlying the high-k gate dielectric layer, a dielectric cap layer in contact with top and sidewall portions of the gate electrode, the dielectric cap layer having a lower dielectric constant than the high-k gate dielectric layer, and source and drain contacts coupled to the source and drain regions..
|Compositions of low-k dielectric sols containing nonmetallic catalysts|
A sol composition for producing a porous low-k dielectric material is provided. The composition can include at least one silicate ester, a polar solvent, water, an acid catalyst for silicate ester hydrolysis, an amphiphilic block copolymer surfactant, and a nonmetallic catalyst that reduces dielectric constant in the produced material.
|Radar absorbing material compatible with lightning protection systems|
A wind turbine component incorporating radar-absorbing material having increased compatibility with lightning protection systems is described. The radar absorbing material includes a ground plane having an electrical conductivity and/or a dielectric constant that is higher in the presence of an electric field having a frequency of 1 ghz and above than in the presence of an electric field having a frequency of 10 mhz and below.
|Semiconductor structure incorporating a contact sidewall spacer with a self-aligned airgap and a method of forming the semiconductor structure|
Disclosed is a semiconductor structure incorporating a contact sidewall spacer with a self-aligned airgap and a method of forming the semiconductor structure. The structure comprises a semiconductor device (e.g., a two-terminal device, such as a pn junction diode or schottky diode, or a three-terminal device, such as a field effect transistor (fet), a bipolar junction transistor (bjt), etc.) and a dielectric layer that covers the semiconductor device.
A semiconductor device includes: a first semiconductor layer formed on a substrate and formed of a nitride-based semiconductor; a second semiconductor layer formed on a surface of the first semiconductor layer and formed of a nitride-based semiconductor having a wider band-gap than the first semiconductor layer; first and second electrodes formed on a surface of the second semiconductor layer; an inter-electrode insulator film that is formed between the first and second electrodes on the surface of the second semiconductor layer; and a dielectric constant adjustment layer formed on the inter-electrode insulator film and formed of an electric insulator. The first electrode has a field plate portion formed so as to ride on the inter-electrode insulator film, and the dielectric constant adjustment layer has a first layer that contacts a lateral end portion of the field plate portion and a second layer formed on the first layer..
|Method of manufacturing semiconductor device|
Provided is a method of manufacturing a semiconductor device in which a via hole and a trench are formed in a low dielectric constant film using a hard mask film having at least three layers. In a process of forming the hard mask film having at least three layers, the hard mask film formed of an insulating material and the hard mask film formed of a metal material, amorphous silicon or polycrystalline silicon are alternately laminated..
|Halogen-free resin composition and application thereof|
A halogen-free resin composition including (a) 100 parts by weight of polyphenylene ether resin containing an alkenyl group; (b) 10 to 50 parts by weight of cyclo olefin copolymer (coc); (c) 5 to 50 parts by weight of 1,2,4-trivinylcyclohexane resin and/or 1,3,5-triethyloxymethyl cyclohexane resin; and (d) 5 to 150 parts by weight of polyphenylene ether pre-polymerized branch cyanate ester. The halogen-free resin composition can manifest low dielectric constant, low dielectric dissipation factor, high heat resistance, and high glass transition temperature by using the specified ingredient in the specified ratio, thus can be used in preparing a prepreg or a resin film, which is applicable to copper clad laminates and printed circuit boards..