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Dielectric Constant patents



      
           
This page is updated frequently with new Dielectric Constant-related patent applications. Subscribe to the Dielectric Constant RSS feed to automatically get the update: related Dielectric RSS feeds. RSS updates for this page: Dielectric Constant RSS RSS


Process for curing low-dielectric constant material

Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch…

Date/App# patent app List of recent Dielectric Constant-related patents
07/17/14
20140198151
 Ink, ink cartridge and ink jet recording method patent thumbnailnew patent Ink, ink cartridge and ink jet recording method
Wherein n means a kind of water or the water-soluble organic solvent, ∈n is a dielectric constant of water or the water-soluble organic solvent represented by n, and rn is a content of water or the water-soluble organic solvent represented by n based on the total mass of the ink.. .
07/17/14
20140198014
 Patch antenna patent thumbnailnew patent Patch antenna
A patch antenna includes a dielectric substrate having a body that extends a thickness from a first side to a second side that is opposite the first side. The body of the substrate has a perimeter that is defined by at least one side wall that extends along the thickness of the substrate from the first side to the second side.
07/17/14
20140197544
 Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch stop materials patent thumbnailnew patent Semiconductor device comprising metallization layers of reduced interlayer capacitance by reducing the amount of etch stop materials
Upon forming a complex metallization system, the parasitic capacitance between metal lines of adjacent metallization layers may be reduced by providing a patterned etch stop material. In this manner, the patterning process for forming the via openings may be controlled in a highly reliable manner, while, on the other hand, the resulting overall dielectric constant of the metallization system may be reduced, thereby also significantly reducing the parasitic capacitance between stacked metal lines..
07/17/14
20140196303
 Process for curing low-dielectric constant material patent thumbnailnew patent Process for curing low-dielectric constant material
Provided is a low-dielectric constant material curing process including irradiating a low-dielectric constant material on a semiconductor substrate with ultraviolet rays. In the low-dielectric constant material curing process, the ultraviolet light source is a fluorescent lamp including: a light-emitting tube sealed and filled with a discharge gas containing xenon gas; a pair of electrodes for inducing a discharge in the interior space of the light-emitting tube; a dielectric material being interposed between the interior space and at least one of the pair of electrodes; and a phosphor layer formed on a surface of the light-emitting tube and containing a phosphor that is excited by light generated from the discharge gas by a discharge in the interior space.
07/10/14
20140191227
 Organic electroluminescence element patent thumbnailOrganic electroluminescence element
An organic electroluminescent element includes a light-emitting layer between an anode and a cathode. The light-emitting layer contains a phosphorescent light-emitting organic metal complex and at least one host compound.
07/03/14
20140187930
 Microwave transmission device and microwave transmission system patent thumbnailMicrowave transmission device and microwave transmission system
There is provided a microwave transmission device including two or more antennas impedance-matched with a contact target having a predetermined dielectric constant. When the impedance matching is achieved, microwaves for tumor detection between the two or more antennas are transmitted via the contact target..
07/03/14
20140185187
 Electrostatic energy storage device and preparation method thereof patent thumbnailElectrostatic energy storage device and preparation method thereof
The present invention discloses an electrostatic energy storage device and a preparation method thereof. The device comprises at least one electrostatic energy storage unit, wherein each electrostatic energy storage unit is provided with a five-layer structure and comprises two metal film electrodes which form a capacitor, composite nano insulating film layers attached to the inner sides of the two metal film electrodes, and a ceramic nano crystalline film arranged between the composite nano insulating film layers.
07/03/14
20140184712
 Semi-conductive media transport for electrostatic tacking of media patent thumbnailSemi-conductive media transport for electrostatic tacking of media
A semi-conductive media transport is used with an ink jet printing system. A belt is held flat and slides across a conductive platen, causing electrostatic charges on the belt.
07/03/14
20140184377
 Inductor patent thumbnailInductor
Disclosed herein is an inductor including: a substrate; an insulating part provided on the substrate; and a conductive pattern part provided in the insulating part, wherein the insulating part includes first and second insulating parts that are provided at regions physically separated from each other, the first and second insulating parts being made of materials of which at least one of dielectric constant and heat resistance are different. In the inductor according to the present invention, high q and l values may be implemented, and deformation by heat treatment may also be decreased, thereby making it possible to improve reliability..
07/03/14
20140183706
 Dielectric films comprising silicon and methods for making same patent thumbnailDielectric films comprising silicon and methods for making same
Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer..
07/03/14
20140183507
Organic field-effect transistor
An organic transistor including at least one lower substrate made of plastic material, two electrodes, respectively a source electrode and a drain electrode, deposited on the plastic substrate, a semiconductor layer made of an organic semiconductor material and deposited on the electrodes and the plastic substrate, a dielectric layer deposited on the semiconductor layer, and a gate electrode formed on said dielectric layer. It further includes a porous layer extending between the plastic substrate and the semiconductor layer, said porous layer extending at least between the source and drain electrodes, to decrease the dielectric constant of the surface of said plastic substrate..
06/26/14
20140179119
Advanced low k cap film formation process for nano electronic devices
A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % c and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen.
06/26/14
20140178697
Halogen-free resin composition, copper clad laminate using the same, and printed circuit board using the same
A halogen-free resin composition includes (a) 100 parts by weight of epoxy resin; (b) 2 to 15 parts by weight of oxydianiline (oda); and (c) 2 to 20 parts by weight of amino triazine novolac (atn) resin. The halogen-free resin composition includes specific ingredients, and is characterized by specific proportions thereof, to thereby achieve a low dielectric constant, a low dielectric dissipation factor, high heat resistance, and high flame retardation, and thus is suitable for producing a prepreg or resin film to thereby be applicable to copper clad laminates and printed circuit boards..
06/26/14
20140178696
Resin composition, copper-clad laminate and printed circuit board for use therewith
A resin composition includes (a) an epoxy resin; (b) a benzoxazine (bz) resin; (c) a styrene maleic anhydride (sma) copolymer; and (d) a polyester. The resin composition includes specific ingredients of a polyester and is characterized by specific proportions thereof so as to achieve a low delta tg value of copper clad laminates manufactured in accordance with the resin composition and attain a low dielectric constant, a low dielectric dissipation factor, high heat resistance, and high fire retardation of the copper clad laminates and printed circuit boards manufactured in accordance with the resin composition..
06/26/14
20140178022
Waveguide apparatuses and methods
Optical fiber waveguides and related approaches are implemented to facilitate communication. As may be implemented in accordance with one or more embodiments, a waveguide has a substrate including a lattice structure having a plurality of lattice regions with a dielectric constant that is different than that of the substrate, a defect in the lattice, and one or more deviations from the lattice.
06/26/14
20140176370
Antenna, electronic apparatus with the same, and antenna manufacturing method
An antenna includes a sintered body block with a predetermined magnetic permeability or a predetermined dielectric constant, the sintered body block having at least one air cavity; and an antenna pattern formed on a surface of the sintered body block.. .
06/26/14
20140175569
Semiconductor device having a high-k gate dielectric layer
A method of fabricating a semiconductor device includes forming a lower interfacial layer on a semiconductor layer, the lower interfacial layer being a nitride layer, forming an intermediate interfacial layer on the lower interfacial layer, the intermediate interfacial layer being an oxide layer, and forming a high-k dielectric layer on the intermediate interfacial layer. The high-k dielectric layer has a dielectric constant that is higher than dielectric constants of the lower interfacial layer and the intermediate interfacial layer..
06/26/14
20140175566
Converting a high dielectric spacer to a low dielectric spacer
A dielectric constant of spacer material in a transistor is changed from a high-κ dielectric material to a low-κ dielectric material. The process uses oxidation treatments to enable the transformation of the high-κ dielectric material to a low-κ dielectric material..
06/26/14
20140175422
Deposition of rutile films with very high dielectric constant
Anisotropic materials, such as rutile tio2, can exhibit dielectric constant of 170 along the tetragonal axis of (001) direction, and dielectric constant of 86 along directions perpendicular to the tetragonal axis. Layer of anisotropic material nanorods, such as tio2 nanorods, can form a seed layer to grow a dielectric layer that can exhibit the higher dielectric constant value in a direction parallel to the substrate surface.
06/26/14
20140174802
Lowdielectric resin composition, copper clad laminate using the same, and printed circuit board using the same
A halogen-free resin composition includes (a) 100 parts by weight of naphthalene epoxy resin; (b) 10 to 100 parts by weight of styrene maleic anhydride copolymer; and (c) 30 to 70 parts by weight of dopo-containing bisphenol f novolac resin. The halogen-free resin composition includes specific ingredients, and is characterized by specific proportions thereof, to thereby attain a low dielectric constant, a low dielectric dissipation factor, high heat resistance, and high flame retardation, and thus is suitable for producing a prepreg or a resin film to thereby be applicable to copper clad laminates and printed circuit boards..
06/19/14
20140170305
Insulated ultrafine powder, method for producing same, and high dielectric constant resin composite material
Provided are an insulated ultrafine powder obtained by adding liquid metal alkoxide to a methanol-containing organic solvent in which a conductive ultrafine powder comprising a carbon material is dispersed and further adding water thereto and a method for producing the same. Also, provided are an insulated ultrafine powder obtained by adding liquid metal alkoxide to a methanol-containing organic solvent in which a conductive ultrafine powder comprising a carbon material is dispersed, further adding a coupling agent having an alkoxide group and then adding water thereto and a method for producing the same.
06/19/14
20140168850
Rf filter for an active medical device (amd) for handling high rf power induced in an associated implanted lead from an external rf field
An rf filter for an active medical device (amd), for handling rf power induced in an associated lead from an external rf field at a selected mri frequency or range frequencies includes a capacitor having a capacitance of between 100 and 10,000 picofarads, and a temperature stable dielectric having a dielectric constant of 200 or less and a temperature coefficient of capacitance (tcc) within the range of plus 400 to minus 7112 parts per million per degree centigrade. The capacitor's dielectric loss tangent in ohms is less than five percent of the capacitor's equivalent series resistance (esr) at the selected mri rf frequency or range of frequencies..
06/19/14
20140167271
Interconnect structure and forming method thereof
An interconnect structure and a forming method thereof are provided. The method includes: providing a semiconductor substrate which has semiconductor devices formed therein; forming a conductive layer on the semiconductor substrate; forming a mask layer on the conductive layer; forming a groove in the mask layer and the conductive layer, the groove having a depth-to-width ratio greater than 0.8; and depositing an intermetallic dielectric layer to cover the mask layer and fill the groove, wherein an air gap is formed in a portion of the intermetallic dielectric layer in the groove.
06/19/14
20140167250
Semiconductor device
A semiconductor device and a method of forming the same are disclosed, which forms a low-dielectric-constant oxide film only at a peripheral part of a bit line conductive material, resulting in reduction in parasitic capacitance of the bit line. The semiconductor device includes a bit line formed over a semiconductor substrate, a first spacer formed over sidewalls of the bit line, and a second spacer formed over sidewalls of the first spacer, configured to have a dielectric constant lower than that of the first spacer..
06/19/14
20140167070
Electronic chip and method of fabricating the same
Provided are an electronic chip and a method of fabricating the same. The semiconductor chip may include a substrate, an active device integrated on the substrate, a lower interlayered insulating layer covering the resulting structure provided with the active device, a passive device provided on the lower interlayered insulating layer, an upper interlayered insulating layer covering the resulting structure provided with the passive device, and a ground electrode provided on the upper interlayered insulating layer.
06/19/14
20140166328
Communication wire
The present invention relates to an improved insulated conductor with a low dielectric constant and reduced materials costs. The conductor (12) extends along a longitudinal axis and an insulation (14, 14<1>) surrounds the conductor (12).
06/12/14
20140162448
Semiconductor device with metal gates and method for fabricating the same
A semiconductor device includes a gate insulation layer formed over a substrate and having a high dielectric constant, a gate electrode formed over the gate insulation layer and a work function control layer formed between the substrate and the gate insulation layer and inducing a work function shift of the gate electrode.. .
06/12/14
20140162065
Ceramic filled fluoropolymer compositions, methods and applications thereof
The present disclosure is in the field of electrical circuits and particularly to circuits characterized by plural conductive paths supported on a non-conductive substrate. The disclosure relates to ceramic filler compositions and methods for preparing said compositions.
06/12/14
20140160649
Mobile electronic device comprising a modified sapphire
An electronic device comprising a cover plate is disclosed. The cover plate comprises at least one layer of modified sapphire having a dielectric constant that is higher than the dielectric constant of sapphire,.
06/12/14
20140160059
Touch sensor mechanism and manufacturing method thereof
A touch sensor mechanism for a touch display device, includes a cover lens made by a transparent material having a dielectric constant greater than 4.5 and a compression strength greater than 700 mpa for generating a finger's touching capacitance (cf) while a user's finger of a user touch thereon; and a sensor device module including a plurality of sensor devices having a sensor parasitic capacitance (cp). The cover lens and the sensor device module are disposed in the touch display device in such a manner that a ratio of a standard deviation value (σu) of the finger's touching capacitance (cf) of the cover lens to the sensor parasitic capacitance (cp) of the sensor device module is a signal-to-noise ratio (snr).
06/12/14
20140159137
Gate structure in non-volatile memory device
A gate structure of a non-volatile memory device and a method of forming the same including a tunnel oxide layer pattern, a charge trap layer pattern, a blocking dielectric layer pattern having the uppermost layer including a material having a first dielectric constant greater than that of a material included in the tunnel oxide layer pattern, and first and second conductive layer patterns. The gate structure includes a first spacer to cover at least the sidewall of the second conductive layer pattern.
06/05/14
20140151875
Crosstalk polarity reversal and cancellation through substrate material tuning
Transmission lines with a first dielectric material separating signal traces and a second dielectric material separating the signal traces from a ground plane. In embodiments, mutual capacitance is tuned relative to self-capacitance to reverse polarity of far end crosstalk between a victim and aggressor channel relative to that induced by other interconnect portions along the length of the channels, such as inductively coupled portions.
06/05/14
20140151856
Chip module, an insulation material and a method for fabricating a chip module
The chip module includes a carrier, a semiconductor chip arranged on or embedded inside the carrier, and an insulation layer that at least partly covers a face of the carrier. The dielectric constant ∈r and the thermal conductivity λ of the insulation layer satisfy the condition λ·∈r<4.0 w·m−1·k−1..
06/05/14
20140151791
Semiconductor device
A semiconductor device comprises: a memory cell region having a first transistor and a peripheral circuit region having a second transistor. The first transistor has a first source electrode and a first drain electrode, a first buried gate insulating film which is formed along an inner wall of a trench and whose relative dielectric constant is higher than a relative dielectric constant of silicon oxide, and a buried gate electrode.
06/05/14
20140150966
High dielectric nanosheet laminate, high dielectric element and method for producing the same
A high dielectric nanosheet laminate is produced by laminating nanosheets, each of which has a thickness of 10 nm or less and is formed of an oxide that has a perovskite structure wherein at least four nbo6 octahedrons, tao6 octahedrons or tio6 octahedrons are included in a unit lattice. Consequently, the high dielectric nanosheet laminate is capable of achieving a high dielectric constant and a satisfactory insulation property, which are preferable for high dielectric nanosheet multilayer capacitors or the like, at the same time even if formed very thin..
05/29/14
20140146393
Transmitted light control device
A transmitted light control device 10 includes: a grating substrate 1; a metal thin film 2; a conducting polymer layer 3 made by depositing a conducting polymer on the metal thin film 2; a cell 4 filled with a liquid medium 5 composed of an electrolyte or a buffer solution and configured such that a part of the liquid medium 5 is in contact with the conducting polymer layer 3; and a metal thin film potential control means 6 having a working electrode w connected to the metal thin film 2 and having a counter electrode c and a reference electrode r each connected to the liquid medium 5. The substrate 1 and at least a part of the cell 4 are made of a light transmitting material.
05/29/14
20140146096
Method and apparatus for setting gamma reference voltage, driving circuit and display apparatus
A method and an apparatus for setting a gamma reference voltage, and a driving circuit are provided, which decrease a driving voltage of a display apparatus and reduce power consumption by resetting the gamma reference voltage of the display apparatus. The method comprises: acquiring a dielectric constant of a liquid crystal capacitor according to a first gamma reference voltage (101); acquiring a value of the liquid crystal capacitor according to the dielectric constant of the liquid crystal capacitor(102); acquiring a feedback voltage according to the value of the liquid crystal capacitor, acquiring a second gamma reference voltage according to the feedback voltage, and updating the first gamma reference voltage to the second gamma reference voltage(103).
05/29/14
20140144687
Multilayered ceramic capacitor and mounting structure of circuit board having multilayered ceramic capacitor mounted thereon
There is provided a multilayered ceramic capacitor, including a ceramic body, an active layer including a plurality of first and second internal electrodes alternately exposed through both end surfaces of the ceramic body while having the dielectric layer therebetween, to form capacitance; upper and lower cover layers formed above and below the active layer; first and second external electrodes covering both end surfaces of the ceramic body; a plurality of first and second dummy electrodes extended from the first and second external electrodes; and a plurality of piezoelectric members connecting the first internal electrode and the first dummy electrode or the second internal electrode and the second dummy electrode, inside the active layer, the piezoelectric members having a higher dielectric constant than the dielectric layer.. .
05/22/14
20140139971
Sintering of high temperature conductive and resistive pastes onto temperature sensitive and atmospheric sensitive materials
An method of forming a metal foil coated ceramic and a metal foil capacitor is provided in a method of making a metal foil coated ceramic comprising providing a metal foil; applying a ceramic precursor to the metal foil wherein the ceramic precursor comprises at least one susceptor and a high dielectric constant oxide and an organic binder, and sintering the ceramic precursor with a high intensity, high pulse frequency light energy to form the metal foil ceramic.. .
05/22/14
20140139809
Optical element, light source apparatus, and projection-type display apparatus
An optical element that can reduce the etendue of emitted light emitted from the optical element without having depend on the etendue of light-emitting elements is provided with a plasmon-excitation layer that is interposed between two layers having dielectric properties wherein, taking the plasmon-excitation layer as a border, the effective dielectric constant of the emission-side portion that is the emission layer side is higher than the effective dielectric constant of the incident-side portion that is the side of a carrier-generating layer, and the dielectric constant between the plasmon-excitation layer and the carrier-generating layer is higher than the dielectric constant between the carrier-generating layer and the light-incident surface.. .
05/22/14
20140138835
Copper interconnect structure and method for manufacturing the same
A method is disclosed for manufacturing a semiconductor device with a copper interconnect structure. The method includes providing a substrate, forming a first interconnect dielectric layer on the substrate, and forming a second interconnect dielectric layer on a surface of the first interconnect dielectric layer.
05/22/14
20140138781
Dielectric equivalent thickness and capacitance scaling for semiconductor devices
A device and method for fabricating a capacitive component includes forming a high dielectric constant material over a semiconductor substrate and forming a scavenging layer on the high dielectric constant material. An anneal process forms oxide layer between the high dielectric constant layer and the scavenging layer such that oxygen in the high dielectric constant material is drawn out to reduce oxygen content..
05/15/14
20140136113
Apparatus and method for formation dielectric constant and resistivity measurements
An apparatus for measuring formation resistivity and dielectric constant used with a logging tool includes a tool pad coupled to the logging tool, a pair of receivers deployed on the tool pad including a first receiver and a second receiver, a measuring transmitter deployed on the tool pad and at an axial distance from the pair of receivers, and a compensating transmitter deployed on the tool pad and positioned substantially at the midpoint of the pair of receivers. The compensating transmitter transmits compensating signals to the pair of receivers and the measuring transmitter transmits measuring signals to the pair of receivers.
05/15/14
20140134852
Method and apparatus for forming dielectric film of low-dielectric constant and method for detaching porogen
A method for forming a porous low-k film having an si—o structure includes irradiating infrared light upon a film including a material having an si—o structure, and irradiating ultraviolet light upon the film including the material having the si—o structure such that a porous low-k film including the material having the si—o structure is formed. The irradiating of the infrared light has an irradiation period of infrared light which is set shorter than an irradiation period of ultraviolet light in the irradiating of the ultraviolet light..
05/15/14
20140134432
Adhesive agent composition, adhesive agent layer, and adhesive sheet
A pressure-sensitive adhesive composition of the invention includes a (meth)acryl-based polymer obtained by polymerization of a monomer component including 25% by weight to 99.5% by weight of a cyclic structure-containing monomer and 0.5% by weight to 70% by weight of a branched structure-containing (meth)acryl-based monomer having a branched alkyl group of 3 to 18 carbon atoms at an ester end. The pressure-sensitive adhesive composition has a satisfactory level of adhesive performance and can form a pressure-sensitive adhesive layer with a lower dielectric constant..
05/15/14
20140132870
Liquid crystal display device
A novel liquid crystal display device without a decrease in display quality. The liquid crystal display device includes a pixel for displaying a still image at a frame frequency of less than or equal to 1 hz, and a liquid crystal layer in the pixel has a dielectric constant anisotropy of greater than or equal to 2 and less than or equal to 5.
05/08/14
20140127894
Manufacturing method of non-volatile memory
The present invention provides a manufacturing method of a non-volatile memory including forming a gate dielectric layer on a substrate; forming a floating gate on the gate dielectric layer; forming a first charge blocking layer on the floating gate; forming a nitride layer on the first charge blocking layer; forming a second charge blocking layer on the nitride layer; forming a control gate on the second charge blocking layer; and performing a treatment to the nitride layer to get a higher dielectric constant.. .
05/08/14
20140127494
Polyimide porous body and method for producing same
An object of the present invention is to provide a polyimide porous body having an excellent heat resistance, a fine cell structure, and a low relative dielectric constant, and a method for producing the polyimide porous body. The present invention relates to a method for producing a polyimide porous body, comprising a step for applying a polymer solution containing a polyamide acid, a phase separation agent for separating the phases of the polyamide acid, an imidization catalyst, and a dehydrating agent, on a substrate, and drying the polymer solution to produce a phase-separated structure body having a microphase-separated structure; a step for producing a porous body by removing the phase separation agent from the phase-separated structure body; and a step for subjecting the polyamide acid in the porous body to imidization to synthesize a polyimide..
05/08/14
20140124865
Semiconductor device including low-k dielectric cap layer for gate electrodes and related methods
A semiconductor device may include a substrate, source and drain regions in the substrate, a recessed epitaxial channel layer in the substrate between the source and drain regions, and a high-k gate dielectric layer overlying the recessed epitaxial channel layer. The semiconductor device may further include a gate electrode overlying the high-k gate dielectric layer, a dielectric cap layer in contact with top and sidewall portions of the gate electrode, the dielectric cap layer having a lower dielectric constant than the high-k gate dielectric layer, and source and drain contacts coupled to the source and drain regions..
05/01/14
20140120739
Compositions of low-k dielectric sols containing nonmetallic catalysts
A sol composition for producing a porous low-k dielectric material is provided. The composition can include at least one silicate ester, a polar solvent, water, an acid catalyst for silicate ester hydrolysis, an amphiphilic block copolymer surfactant, and a nonmetallic catalyst that reduces dielectric constant in the produced material.
05/01/14
20140118177
Radar absorbing material compatible with lightning protection systems
A wind turbine component incorporating radar-absorbing material having increased compatibility with lightning protection systems is described. The radar absorbing material includes a ground plane having an electrical conductivity and/or a dielectric constant that is higher in the presence of an electric field having a frequency of 1 ghz and above than in the presence of an electric field having a frequency of 10 mhz and below.
05/01/14
20140117420
Semiconductor structure incorporating a contact sidewall spacer with a self-aligned airgap and a method of forming the semiconductor structure
Disclosed is a semiconductor structure incorporating a contact sidewall spacer with a self-aligned airgap and a method of forming the semiconductor structure. The structure comprises a semiconductor device (e.g., a two-terminal device, such as a pn junction diode or schottky diode, or a three-terminal device, such as a field effect transistor (fet), a bipolar junction transistor (bjt), etc.) and a dielectric layer that covers the semiconductor device.
05/01/14
20140117410
Semiconductor device
A semiconductor device includes: a first semiconductor layer formed on a substrate and formed of a nitride-based semiconductor; a second semiconductor layer formed on a surface of the first semiconductor layer and formed of a nitride-based semiconductor having a wider band-gap than the first semiconductor layer; first and second electrodes formed on a surface of the second semiconductor layer; an inter-electrode insulator film that is formed between the first and second electrodes on the surface of the second semiconductor layer; and a dielectric constant adjustment layer formed on the inter-electrode insulator film and formed of an electric insulator. The first electrode has a field plate portion formed so as to ride on the inter-electrode insulator film, and the dielectric constant adjustment layer has a first layer that contacts a lateral end portion of the field plate portion and a second layer formed on the first layer..
04/24/14
20140113438
Method of manufacturing semiconductor device
Provided is a method of manufacturing a semiconductor device in which a via hole and a trench are formed in a low dielectric constant film using a hard mask film having at least three layers. In a process of forming the hard mask film having at least three layers, the hard mask film formed of an insulating material and the hard mask film formed of a metal material, amorphous silicon or polycrystalline silicon are alternately laminated..
04/24/14
20140113118
Halogen-free resin composition and application thereof
A halogen-free resin composition including (a) 100 parts by weight of polyphenylene ether resin containing an alkenyl group; (b) 10 to 50 parts by weight of cyclo olefin copolymer (coc); (c) 5 to 50 parts by weight of 1,2,4-trivinylcyclohexane resin and/or 1,3,5-triethyloxymethyl cyclohexane resin; and (d) 5 to 150 parts by weight of polyphenylene ether pre-polymerized branch cyanate ester. The halogen-free resin composition can manifest low dielectric constant, low dielectric dissipation factor, high heat resistance, and high glass transition temperature by using the specified ingredient in the specified ratio, thus can be used in preparing a prepreg or a resin film, which is applicable to copper clad laminates and printed circuit boards..
04/24/14
20140111752
Liquid crystal display device and method of manufacturing the same
There is provided a liquid crystal display device including a liquid crystal display element including a first alignment film and a second alignment film provided on opposing surfaces of a pair of substrates, and a liquid crystal layer arranged between the first alignment film and the second alignment film and including crystal molecules having negative dielectric constant anisotropy. At least the first alignment film includes a compound in which a polymer compound having a first side chain and a second side chain is crosslinked or polymerized.
04/17/14
20140107256
Thermoset resin composition and its use
The present invention discloses a thermoset resin composition including epoxy resin other than brominated epoxy resin, styrene maleic anhydride copolymer and additive-type flame retardant. The thermoset resin composition also includes an active ester.
04/17/14
20140106557
Manufacturing method for semiconductor device having metal gate
A manufacturing method for semiconductor device having metal gate includes providing a substrate having a first semiconductor device and a second semiconductor device formed thereon, the first semiconductor device having a first gate trench and the second semiconductor device having a second gate trench; sequentially forming a high dielectric constant (high-k) gate dielectric layer and a multiple metal layer on the substrate; forming a first work function metal layer in the first gate trench; performing a first pull back step to remove a portion of the first work function metal layer from the first gate trench; forming a second work function metal layer in the first gate trench and the second gate trench; and performing a second pull back step to remove a portion of the second work function metal layer from the first gate trench and the second gate trench.. .
04/17/14
20140104531
Liquid crystal display and manufacturing method thereof
A liquid crystal display, including: a first substrate and a second substrate; a liquid crystal layer; a first data line disposed on the first substrate; a pixel electrode disposed on the first substrate; and a common electrode disposed on the first substrate and overlapping at least a portion of the pixel electrode and the first data line. One of the pixel electrode and the common electrode includes a plurality of branch electrodes spaced apart from each other and the other of has an at least approximately planar shape that is substantially parallel to a surface of at least one of the first substrate and the second substrate.
04/17/14
20140103508
Encapsulating package for an integrated circuit
An apparatus is provided. An integrated circuit or ic is secured to a package housing.
04/17/14
20140102754
Structure of a networking cable
A structure of a networking cable includes a plurality of transmission wires and a plastic outer sheath being a hollow tube for sleeving the transmission wires therein. The plastic outer sheath is formed with at least one hollow compartment extending along a longitudinal length thereof.
04/10/14
20140099796
Method for developing low dielectric constant film and devices obtained thereof
A method for porogen removal of porous sioch film is provided, as well as devices obtained thereof. The devices and associated methods are in the field of advanced semiconductor interconnect technology, and more in particular in the development of dielectric films with low-k value..
04/10/14
20140099445
Method for producing a film having a nano-structure on the surface of the film
A method is provided for producing easily a membrane (film) having a micro surface structure (porous structure, fibrous structure and the like) in nano-order. The method for producing a film having a nano-structure on the surface of the film, includes the steps of: (1) coating a substrate with a solution containing a copolymer including two or more homopolymer segments and an organic solvent having boiling point of 82° c.
04/10/14
20140098457
Dielectric composition and multilayer ceramic electronic component manufactured using the same
There are provided a dielectric composition and a multilayer ceramic electronic component manufactured using the same, the dielectric composition including a dielectric grain having a perovskite structure represented by abo3, wherein the dielectric grain has a core-shell structure in which a content of an additive in a shell is 15% or less, based on an average content of the additive distributed throughout the dielectric grain, so that the multilayer ceramic electronic component manufactured using the dielectric composition can have excellent reliability and secure a high dielectric constant.. .
04/10/14
20140098455
Dielectric composition and multilayer ceramic electronic component manufactured using the same
There are provided a dielectric composition and a multilayer ceramic electronic component manufactured using the same, the dielectirc composition including dielectric grains having a perovskite structure represented by abo3, a portion of the dielectric grains having a core-shell structure, wherein dielectric grains having an average length of a core equal to or less than 250 nm and a ratio of the average length of the core to an average length of the dielectric grain below 0.8 may be 50% or more of the portion of dielectric grains having a core-shell structure, so that the multilayer ceramic electronic component manufactured using the dielectric composition can have excellent reliability and secure a high dielectric constant.. .
04/10/14
20140097989
Plate antenna module and method of manufacturing the same
A plate antenna module includes a first substrate unit, a second substrate unit, an adhesive unit and a pin unit. The first substrate unit including a first substrate body and a first electrode layer disposed on the top side of the first substrate body.
04/10/14
20140097918
Printed circuit board having dc blocking dielectric waveguide vias
A printed circuit board is disclosed. The printed circuit board includes a first signal transmission layer, a via and a second signal transmission layer.
04/10/14
20140097916
High-frequency signal transmission line
Unwanted radiation is reduced in a high-frequency signal transmission line that includes a ground conductor provided with an opening that overlaps a signal line. A dielectric element assembly has a relative dielectric constant ∈1 and has a first principal surface and a second principal surface.
04/03/14
20140094551
Compositions incorporating dielectric additives for particle formation, and methods of particle formation using same
A method of forming particles that includes performing a strong force attenuation of a mixture to form pre-particles. The mixture including a base compound and a dielectric additive having an elevated dielectric constant dispersed therein.
04/03/14
20140093933
Microbial cell and particle selection system and method of use
The invention comprises two key components: dielectrophoresis (dep) and reversible binding surfaces. Dep has become an important tool for trapping dielectric particles.
04/03/14
20140093726
Adhesive composition, adhesive layer, and adhesive sheet
Provided is a pressure-sensitive adhesive composition capable of realizing a pressure-sensitive adhesive layer having satisfactory adhesion performance and a low dielectric constant. This pressure-sensitive adhesive composition is characterized by containing a methacrylic polymer with a glass transition temperature (tg) of 0° c.


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Dielectric Constant topics: Dielectric Constant, Semiconductor, Memory Device, Contiguous, Integrated Circuit, Magnetic Field, Field Effect Transistor, Liquid Crystal Lens, Liquid Crystal, Downsizing, Computer Readable, Fluoropolymer, Volatile Memory, Conductive Layer, Mim Capacitor

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