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Crystallin patents

      

This page is updated frequently with new Crystallin-related patent applications.




 Acoustic resonator structure with inclined c-axis piezoelectric bulk and crystalline seed layers patent thumbnailAcoustic resonator structure with inclined c-axis piezoelectric bulk and crystalline seed layers
Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential.
Qorvo Us, Inc.


 Methods for producing piezoelectric bulk and crystalline seed layers of different c-axis orientation distributions patent thumbnailMethods for producing piezoelectric bulk and crystalline seed layers of different c-axis orientation distributions
Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential.
Qorvo Us, Inc.


 Methods for fabricating acoustic structure with inclined c-axis piezoelectric bulk and crystalline seed layers patent thumbnailMethods for fabricating acoustic structure with inclined c-axis piezoelectric bulk and crystalline seed layers
Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential.
Qorvo Us, Inc.


 Olivine-type cathode active material precursor for lithium battery, olivine-type cathode active material for lithium battery,  preparing the same and lithium battery with the same patent thumbnailOlivine-type cathode active material precursor for lithium battery, olivine-type cathode active material for lithium battery, preparing the same and lithium battery with the same
The present invention provides an olivine-type positive active material precursor for a lithium battery that includes mxo4-zbz (wherein m is one element selected from the group consisting of fe, ni, co, mn, cr, zr, nb, cu, v, ti, zn, al, ga, mg, b, and a combination thereof, x is one element selected from the group consisting of p, as, bi, sb, and a combination thereof, b is one element selected from the group consisting of f, s, and a combination thereof, and 0≦z≦0.5) particles, and the precursor has a particle diameter of 1 to 20 μm, a tap density of 0.8 to 2.1 g/cm3, and a specific surface area of 1 to 10 m2/g. The olivine-type positive active material prepared using the olivine-type positive active material precursor has excellent crystallinity of particles, a large particle diameter, and a high tap density, and therefore shows excellent electrochemical characteristics and capacity per unit volume..
Iuc F-hyu (industry-university Cooperation Foundation Hanyang Unversity)


 Composition of, and  forming, a semiconductor structure with multiple insulator coatings patent thumbnailComposition of, and forming, a semiconductor structure with multiple insulator coatings
A semiconductor structure includes a nanocrystalline core comprising a first semiconductor material, and at least one nanocrystalline shell comprising a second, different, semiconductor material that at least partially surrounds the nanocrystalline core. The nanocrystalline core and the nanocrystalline shell(s) form a quantum dot.
Pacific Light Technologies Corp.


 Light emitting device and  manufacturing light emitting device patent thumbnailLight emitting device and manufacturing light emitting device
A method for manufacturing a light emitting device includes a) forming a first light confinement layer having a plurality of openings on or above one main surface of an oriented polycrystalline substrate, said oriented polycrystalline substrate including a plurality of oriented crystal grains; b) stacking an n-type layer, an active layer, and a p-type layer; c) forming a second light confinement layer on said first light confinement layer so that said second light confinement layer covers said plurality of first columnar structures and said second columnar structure; d) forming a transparent conductive film on said second light confinement layer; e) forming a pad electrode on said transparent conductive film; and f) forming a cathode electrode electrically connected to ends of said plurality of first columnar structures closer to said oriented polycrystalline substrate.. .
Ngk Insulators, Ltd.


 Hole blocking, electron transporting and window layer for optimized culn (1-x)ga(x)se2 solar cells patent thumbnailHole blocking, electron transporting and window layer for optimized culn (1-x)ga(x)se2 solar cells
Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline cuin(1-x)gaxse2 (cigs) based thin-film photovoltaic devices having independently tunable sublayers are disclosed.
The Research Foundation For The State University Of New York


 Method of manufacturing photovoltaic device having ultra-shallow junction layer patent thumbnailMethod of manufacturing photovoltaic device having ultra-shallow junction layer
The present invention relates to a method of manufacturing a photovoltaic device having an ultra-shallow junction layer. In the method, a crystalline silicon substrate is cleaned and a first doped semiconductor layer with 1.12 ev bandgap and 5˜80 nm of thickness is grown on the crystalline silicon substrate by high density plasma electron cyclotron resonance cvd in a preparation condition of a temperature of the crystalline silicon substrate ranging from 50° c.
National Central University


 In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers patent thumbnailIn-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers
A method for forming a memory device that includes providing a free layer of an alloy of cobalt (co), iron (fe) and boron (b) overlying a reference layer; and forming metal layer comprising a boron (b) sink composition atop the free layer. Boron (b) may be diffused from the free layer to the metal layer comprising the boron sink composition.
International Business Machines Corporation


 Lift off process for chip scale package solid state devices on engineered substrate patent thumbnailLift off process for chip scale package solid state devices on engineered substrate
A method of processing an engineered substrate structure includes providing an engineered substrate structure including a polycrystalline substrate and an engineered layer encapsulating the polycrystalline substrate, forming a sacrificial layer coupled to the engineered layer, joining a solid state device structure to the sacrificial layer, forming one or more channels in the solid state device structure by removing one or more portions of the solid state device structure to expose one or more portions of the sacrificial layer, flowing an etching chemical through the one or more channels to the one or more exposed portions of the sacrificial layer, and dissolving the sacrificial layer by interaction between the etching chemical and the sacrificial layer, thereby separating the engineered substrate structure from the solid state device structure.. .
Quora Technology, Inc.


Grating, display device, and manufacturing grating

A grating, a manufacturing method of grating and a display device are disclosed. The grating comprises a first substrate (21) and a second substrate (22) which are oppositely disposed; a first transparent electrode (23) which has a grating structure and is disposed on a side of the first substrate (21) facing towards the second substrate (22); a second transparent electrode (24) which is disposed on a side of the second substrate (22) facing towards the first substrate (21) and is disposed to be opposite to the first transparent electrode (23); and a polymer layer (25) which is disposed between the first transparent electrode (23) and the second transparent electrode (24), the polymer layer containing therein nano-sized material converting electromagnetic energy into heat energy and liquid crystalline elastomers.
Beijing Boe Optoelectronics Technology Co., Ltd.

Optical manufacturing the same

Provided are an optical device and a manufacturing method thereof. The method of manufacturing an optical device may include providing a substrate structure, and depositing an array including curved structures on the substrate structure.
Electronics And Telecommunications Research Institute

Method for classifying a defect in a component intended to have a monocrystalline structure

Method and apparatus for classifying defect in component having a monocrystalline structure. The method includes: illuminating surface of component containing defect with beam of light from plurality of different spherical directions; each illumination direction, measuring intensity of light reflected by surface and received by detector; determining contrast value between region with higher intensity and a region with lower intensity for each illumination direction; analysing contrast values by performing tests selected from the following: (a) determining whether region with higher intensity exceeds predetermined width; (b) identifying illumination direction which produces maximum contrast value, and determining whether illumination direction falls outside of predetermined region; (c) identifying peak in contrast values and determining whether peak extends over range of illumination directions which exceeds predetermined threshold; and (d) determining whether contrast values contain plurality of discontinuous peaks; and determining type of defect based on of tests..
Rolls-royce Plc

Systems and devices using hard bearings

Aspects of the disclosure can relate to an apparatus including a first member having a first bearing surface formed from a hard material (e.g., a diamond-based material, such as a polycrystalline diamond material), and a second member coupled to an input shaft to translate (e.g., rotate, slide, etc.) with respect to the first member. The second member has a second bearing surface formed from a hard material, and the second bearing surface is to bear against the first bearing surface.
Schlumberger Techology Corporation

Polycrystalline diamond compacts and methods of manufacture

An example polycrystalline diamond compact includes a substrate and a diamond table attached to the substrate. A multilayer joint interposes the substrate and the diamond table and comprises at least two component parts selected from the group consisting of a base layer, one or more intermediate layers, and a braze layer.
Halliburton Energy Services, Inc.

Method for forming monocrystalline silicon ingot and wafers

The present invention relates to a method for forming monocrystalline silicon ingot and wafers. At first, silica is doped with deuterium atoms which is retained in interstices therein.
Zing Semiconductor Corporation

Crystal pulling producing monocrystalline ingots with reduced edge band defects

A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system.
Sunedison Semiconductor Limited (uen201334164h)

Method for forming monocrystalline silicon ingot and wafer

The present invention relates to a method for forming monocrystalline silicon ingot and wafer. When forming a monocrystalline silicon ingot, melted silicon is introduced with a gas comprising deuterium atoms to receive the deuterium atoms at interstice sites, and thus the oxygen, carbon and other impurity contained therein are decreased.
Zing Semiconductor Corporation

Nanocrystalline cellulose and polymer-grafted nanocrystalline cellulose as rheology modifying agents for magnesium oxide and lime slurries

Rheology modifying agents and methods of modifying the rheology of a slurry are disclosed. Methods for the prevention of fouling and methods for monitoring the rheology of a slurry are also provided.
Ecolab Usa Inc.

Latent heat cold storage material

Provided is a latent heat cold storage material containing: water; a crystalline powder; and at least one inorganic salt. The crystalline powder is formed of a compound having a saturated concentration of less than 7.0 wt % to an aqueous solution of the inorganic salt having a concentration of 25 wt % at 25 c.
Panasonic Intellectual Property Management Co., Ltd.

Cellulose nanocrystal polymer composite

A reinforced polymer composite includes a polymer matrix and a strengthening agent. The strengthening agent includes highly crystalline cellulose nanocrystals (cnc) and a stabilizing agent.

Crystalline lenalidomide process

The invention further relates to pharmaceutical compositions comprising crystalline form-sl of lenalidomide, which may be useful for the treatment of cancer.. .

Crystalline diacylhydrazine and the use thereof

The present disclosure provides crystalline polymorphic and amorphous forms of (r)-3,5-dimethyl-benzoic acid n-(1-tert-butyl-butyl)-n′-(2-ethyl-3-methoxy-benzoyl)-hydrazide (compound 1) or (s)-3,5-dimethyl-benzoic acid n-(1-tert-butyl-butyl)-n′-(2-ethyl-3-methoxy-benzoyl)-hydrazide (compound 2). The present disclosure further provides compositions comprising crystalline polymorphic and amorphous forms of compound 1 or compound 2 and an excipient, methods of making crystalline polymorphic or amorphous forms of compound 1 or compound 2, and methods of using crystalline polymorphic or amorphous forms of compound 1 or compound 2 to regulate gene expression in a cell or in a subject..
Intrexon Corporation

Method for making molecular sieve ssz-105

A method for making a new crystalline molecular sieve designated ssz-105 is disclosed. Ssz-105 is synthesized using n,n-dimethylpiperidinium cations as a structure directing agent.
Chevron U.s.a. Inc.

Molecular sieve ssz-105

A new crystalline molecular sieve designated ssz-105 is disclosed. Ssz-105 is synthesized using n,n-dimethylpiperidinium cations as a structure directing agent.
Chevron U.s.a. Inc.

Oxygen-generating compositions comprising thermally treated (fe,mg)o

The present disclosure provides an oxygen-generating composition comprising an oxygen source and mixed-metal oxide of formula: (fe,mg)o, wherein said mixed-metal oxide is in at least partially crystalline form.. .
Goodrich Lighting Systems Gmbh

Oxygen-generating compositions comprising thermally treated (li,fe,mg)o

The present disclosure provides an oxygen-generating composition comprising an oxygen source and mixed-metal oxide of formula: (li,fe,mg)o, wherein said mixed-metal oxide is in at least partially crystalline form.. .
Goodrich Lighting Systems Gmbh

Rotary cutting tool including polycrystalline diamond material

A rotary cutting tool including a polycrystalline diamond material of the invention includes: a tool body rotated about an axis with a carbide substrate made of cemented carbide and a flute provided at a tip portion thereof; a pcd layer sintered integrally with the carbide substrate, provided on an inside face of the flute facing in a rotation direction; and a cutting edge provided on the pcd layer to have the inside face as a rake face, in which a margin portion continuous with a rear side of the flute in the rotation direction is formed on an outer periphery of the tip portion, the cutting edge is formed at a ridge portion of the rake face, and a thickness of the pcd layer is 1/3 to 1 times a width of the margin portion.. .
Mitsubishi Materials Corporation

R, r, c method and equipment for casting amorphous, ultra-microcrystalline, microcrystalline and the like metal profiles

An r, r, c method and equipment for continuously casting amorphous, ultra-microcrystalline, microcrystalline and the like, metal profiles is provided. A working chamber of an exhaust hood with a powerful exhaust hood, and a working cold source of liquid nitrogen at a temperature of t=−190° c.

Processes using molecular sieve ssz-105

Uses for a new crystalline molecular sieve designated ssz-105 are disclosed. Ssz-105 is synthesized using n,n-dimethylpiperidinium cations as a structure directing agent.
Chevron U.s.a. Inc.

Crystalline forms of tyrosine kinase inhibitors and their salts

The invention relates to various polymorphic forms and amorphous form of sodium 4-((3-(4-cyclohexylpiperazin-1-yl)-6-oxo-6h-anthra[1,9-cd]isoxazol-5-yl)amino)benzate, including the polymorphic form a, mixtures of the polymorphs, process for the preparation thereof and the use thereof in a pharmaceutical composition containing thereof.. .
Purdue Pharma L.p.

Anterior eye tomographic image capturing apparatus

An anterior eye tomographic image capturing apparatus determining a power of an iol (intraocular lens) is configured to acquire a tomographic image of an anterior eye along a straight line passing through a corneal apex of the anterior eye; identify a corneal apex position of the anterior eye, an equator position of a crystalline lens of the anterior eye, and a ss (scleral spur) position of the anterior eye based on the tomographic image; calculate an elp (estimated lens position) based on a first distance from the corneal apex position to the ss position in a direction of a visual axis and a second distance from the ss position to the equator position in the direction of the visual axis; and determine the power of the iol by using the elp.. .
Tomey Corporation

Sweetener compositions

A sweetener composition comprising xylose, a sugar alcohol and brown seaweed extract in solid form, preferably powdered or crystalline form. The sugar alcohol is preferably an erythritol and the brown seaweed extract is preferably obtained from laminaria japonica.
Baxco Pharmaceutical, Inc.

Low-sugar dairy beverages

Ready to drink low sugar flavored dairy beverages are provided, and methods for making such beverages are also provided. The beverage can include a dairy component, a flavor component, and a stabilizing system comprising a first stabilizing component and a second stabilizing component.
Nestec S.a.

Fuel cell catalyst layer, and fuel cell

The fuel cell catalyst layer has: a catalyst including a highly crystalline carbon support and a catalyst metal supported by the highly crystalline carbon support; and an ionomer having a glass transition temperature equal to or greater than 160° c.. .
Toyota Jidosha Kabushiki Kaisha

Light emitting devices with built-in chromaticity conversion and methods of manufacturing

Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission.
Micron Technology, Inc.

Metal-oxide-semiconductor field-effect phototransistors based on single-crystalline semiconductor thin films

Mosfet phototransistors, methods of operating the mosfet phototransistors and methods of making the mosfet phototransistors are provided. The phototransistors have a buried electrode configuration, which makes it possible to irradiate the entire surface areas of the radiation-receiving surfaces of the phototransistors..
Wisconsin Alumni Research Foundation

Ion implantation and annealing for thin-film crystalline solar cells

A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon.
Solexel, Inc.

Thin-film transistor, fabricating thin-film transistor, and display device

Methods of fabricating a thin-film transistor are provided. The methods include forming a gate electrode above a substrate, a gate insulating layer above the gate electrode, a non-crystalline silicon layer above the gate insulating layer, and a channel protective layer above the non-crystalline silicon layer.
Panasonic Liquid Crystal Display Co., Ltd

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and manufacturing the same

A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nmos transistor are provided on a silicon substrate. Using the gate electrode as a mask, n-type dopants having a relatively large mass number (70 or more) such as as ions or sb ions are implanted, to form a source/drain region of the nmos transistor, whereby the gate electrode is amorphized.
Renesas Electronics Corporation

Surface treatment and passivation for high electron mobility transistors

A high electron mobility transistor (hemt) and a method of forming the same are disclosed. The method includes epitaxially growing a first iii-v compound layer and epitaxially growing a second iii-v compound layer over the first iii-v compound layer, wherein a first native oxide layer is formed on the second iii-v compound layer.
Taiwan Semiconductor Manufacturing Company, Ltd.

Manufacturing thin film transistor array panel and thin film transistor array panel

A manufacturing method of a thin film transistor array panel according to an exemplary embodiment of the present invention includes forming an amorphous silicon thin film on a substrate. A lower region of the amorphous silicon thin film is crystallized to form a polycrystalline silicon thin film by irradiating a laser beam with an energy density of from about 150 mj/cm2 to about 250 mj/cm2 to the amorphous silicon thin film..
Samsung Display Co., Ltd.

Doped ferroelectric hafnium oxide film devices

Techniques for forming an electronic device having a ferroelectric film are described. The electronic device comprises a ferroelectric material having one or more crystalline structures.
University Of Florida Research Foundation, Inc.

Method for manufacture of a semiconductor wafer suitable for the manufacture of an soi substrate, and soi substrate wafer thus obtained

A semiconductor wafer suitable for fabricating an soi substrate is provided by: producing a first layer of polycrystalline semiconductor on a top side of a semiconductor carrier; then forming an interface zone on a top side of the first layer, wherein the interface zone has a structure different from a crystal structure of the first layer; and then producing a second layer of polycrystalline semiconductor on the interface zone.. .
Stmicroelectronics Sa

Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions

A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench.
Infineon Technologies Ag

Polycrystalline semiconductor layer and fabricating method thereof

The present application discloses a method of fabricating a polycrystalline semiconductor layer, comprising forming a heat storage layer; forming a buffer layer on the heat storage layer; forming a first amorphous semiconductor layer on a side of the buffer layer distal to the heat storage layer; and crystallizing the first amorphous semiconductor layer to form a first polycrystalline semiconductor layer.. .
Boe Technology Group Co., Ltd.

Plasma generator, annealing device, deposition crystallization apparatus and annealing process

A plasma generator, a plasma annealing device, a deposition crystallization apparatus and a plasma annealing process are disclosed. The plasma generator includes: a gas chamber; a gas intake member configured to introduce a gas into the gas chamber; a cathode and an anode that are configured to apply an electric field to the gas introduced into the gas chamber to ionize the gas into plasma; a cooling water circulation member configured to control a temperature of the plasma generator; and a plasma beam outlet disposed on a top face of the gas chamber.
Boe Technology Group Co., Ltd.



Crystallin topics:
  • Crystallin
  • Interstitial
  • Crystallinity
  • Binder Material
  • Electrolyte
  • Hydrocracking Process
  • Phase Shift
  • Semiconductor
  • Semiconductor Device
  • Nutritional Supplement
  • Alkali Metal
  • Tocopherol
  • Magnetic Field
  • Compliance
  • Anisotropy


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    This listing is a sample listing of patent applications related to Crystallin for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Crystallin with additional patents listed. Browse our RSS directory or Search for other possible listings.


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