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Crystallin patents



      
           
This page is updated frequently with new Crystallin-related patent applications. Subscribe to the Crystallin RSS feed to automatically get the update: related Crystallin RSS feeds. RSS updates for this page: Crystallin RSS RSS


Process for converting gaseous alkanes to liquid hydrocarbons

Date/App# patent app List of recent Crystallin-related patents
08/14/14
20140228938
 Implantable medical device having reduced chance of late inflammatory response patent thumbnailImplantable medical device having reduced chance of late inflammatory response
The invention provides a method for fabricating an implantable medical device to increase biocompatibility of the device, the method comprising: heat setting a polymer construct, wherein the polymer construct is at a temperature range of from about tg to about 0.6(tm−tg)+tg such that the set polymer construct comprises a crystalline structure having crystals at a size less than about 2 microns; and fabricating an implantable medical device from the heat set polymer construct.. .
08/14/14
20140228603
 Process for converting gaseous alkanes to liquid hydrocarbons patent thumbnailProcess for converting gaseous alkanes to liquid hydrocarbons
Embodiments disclose a process for converting gaseous alkanes to higher molecular weight hydrocarbons, olefins or mixtures thereofs wherein a gaseous feed containing alkanes may be reacted with a dry bromine vapor to form alkyl bromides and hydrobromic acid vapor. The mixture of alkyl bromides and hydrobromic acid then may be reacted over a synthetic crystalline alumino-silicate catalyst, such as a zsm-5 or an x or y type zeolite, at a temperature of from about 250° c.
08/14/14
20140228574
 Processes and intermediates for preparing a macrocyclic protease inhibitor of  hcv patent thumbnailProcesses and intermediates for preparing a macrocyclic protease inhibitor of hcv
Disclosed is a process for the preparation of a cinchonidine salt of formula (iv) via an aqueous solution of a racemic 4-hydroxy-1,2-cyclopentanedicarboxylic acid, which is subjected to cyclization without removing water, by the addition of a water-miscible organic solvent to the aqueous solution and, again without removing water, adding cinchonidine to the aqueous-organic solvent solution so as to obtain the cinchonidine salt of the lactone acid. The cinchonidine salt is allowd to crystallize so as to obtain the enantiomerically purified crystalline lactone acid cinchonidine salt (iv).
08/14/14
20140228369
 Crystalline (8s,9r)-5-fluoro-8-(4-fluorophenyl)-9-(1-methyl-1h-1,2,4-triazol-5-yl)-8,9-dihydro-2h-pyrido[4,3,2-de]phthalazin-3(7h)-one tosylate salt patent thumbnailCrystalline (8s,9r)-5-fluoro-8-(4-fluorophenyl)-9-(1-methyl-1h-1,2,4-triazol-5-yl)-8,9-dihydro-2h-pyrido[4,3,2-de]phthalazin-3(7h)-one tosylate salt
Provided herein are (8s,9r)-5-fluoro-8-(4-fluorophenyl)-9-(1-methyl-1h-1,2,4-triazol-5-yl)-8,9-dihydro-2h-pyrido[4,3,2-de]phthalazin-3(7h)-one tosylate salt forms, including crystalline forms, and methods of their preparation. Pharmaceutical compositions comprising a (8s,9r)-5-fluoro-8-(4-fluorophenyl)-9-(1-methyl-1h-1,2,4-triazol-5-yl)-8,9-dihydro-2h-pyrido[4,3,2-de]phthalazin-3(7h)-one tosylate salt are also provided, as are methods of using (8s,9r)-5-fluoro-8-(4-fluorophenyl)-9-(1-methyl-1h-1,2,4-triazol-5-yl)-8,9-dihydro-2h-pyrido[4,3,2-de]phthalazin-3(7h)-one tosylate salt to treat a disease or condition, such as a cancer..
08/14/14
20140228311
 Crystallization of idarubicin hydrochloride patent thumbnailCrystallization of idarubicin hydrochloride
A method is provided for production of crystalline idarubicin hydrochloride, the method including the steps of: (i) producing a mixture containing (a) idarubicin hydrochloride, (b) at least one alcohol selected from 1-butanol, 2-butanol, and 1-pentanol, and (c) water; and (ii) crystallizing idarubicin hydrochloride from this mixture. A crystalline idarubicin hydrochloride is also provided characterized by a powder x-ray diffraction pattern in which at least reflexes at diffraction angles occur in the following ranges (in 2Θ): 7.2-7.7; 11.7-12.2; 16.2-16.7; 16.7-17.2; 19.6-20.1; 19.8-20.3; 22.2-22.7, and 22.9-23.4..
08/14/14
20140227845
 Methods of forming multiple n-type semiconductor devices with different threshold voltages on a semiconductor substrate patent thumbnailMethods of forming multiple n-type semiconductor devices with different threshold voltages on a semiconductor substrate
One illustrative method disclosed herein involves forming an integrated circuit product comprised of first and second n-type transistors formed in and above first and second active regions, respectively. The method generally involves performing a common threshold voltage adjusting ion implantation process on the first and second active regions, forming the first and second transistors, performing an amorphization ion implantation process to selectively form regions of amorphous material in the first active region but not in the second active region, after performing the amorphization ion implantation process, forming a capping material layer above the first and second transistors and performing a re-crystallization anneal process to convert at least portions of the regions of amorphous material to a crystalline material.
08/14/14
20140227825
 Interdigitated back contact heterojunction photovoltaic device patent thumbnailInterdigitated back contact heterojunction photovoltaic device
A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer.
08/14/14
20140227824
 Interdigitated back contact heterojunction photovoltaic device with a floating junction front surface field patent thumbnailInterdigitated back contact heterojunction photovoltaic device with a floating junction front surface field
A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer.
08/14/14
20140227805
 Adhesion of ferroelectric material to underlying conductive capacitor plate patent thumbnailAdhesion of ferroelectric material to underlying conductive capacitor plate
Deposition of lead-zirconium-titanate (pzt) ferroelectric material over iridium metal, in the formation of a ferroelectric capacitor in an integrated circuit. The capacitor is formed by the deposition of a lower conductive plate layer having iridium metal as a top layer.
08/14/14
20140227604
 Apparatus for manufacturing a fine porous film for a separation film of a battery and method for manufacturing a film using the same patent thumbnailApparatus for manufacturing a fine porous film for a separation film of a battery and method for manufacturing a film using the same
The present invention relates to an apparatus and method for manufacturing a fine porous film to be used as a separation film of a secondary battery. The apparatus for manufacturing the fine porous film of the present invention includes: a t-shaped die (20) for molding a precursor film by extruding a molten resin generated by melting a partially crystalline resin through the front end of a nozzle; a guide roller (50) arranged at a downstream side of the extrusion direction of the t-shaped die (20) so as to move and guide the precursor film (f1) at a predetermined draft ratio; a precursor film cooling unit (40) for providing, in the moving direction of the precursor film, a flow of cooling air over either or both of the front and back surfaces of the precursor film so as to cool the precursor film; and a film stretching unit for applying a tensile force, in an axial direction or in biaxial directions, to the cooled film while same is passing through the precursor film cooling means (40)..
08/14/14
20140227560
Conductive layer and preparation method for conductive layer
Provided are a conductive layer and a method of manufacturing the same. The conductive layer is formed without, so called, a high temperature process but has suitable crystallinity, excellent transparency and excellent resistance characteristic, and the method of manufacturing the same is also provided..
08/14/14
20140227516
Carbon fiber sizing agent, carbon fiber strand, and fiber-reinforced composite
A carbon fiber sizing agent imparts good bonding performance to carbon fiber, is used to reinforce a thermoplastic matrix resin, and provides a carbon fiber strand applied with the sizing agent and a fiber-reinforced composite reinforced with the carbon fiber strand. The sizing agent for carbon fiber is used to reinforce thermoplastic matrix resin.
08/14/14
20140227492
Thermally conductive polymer composite material and an article comprising same
A thermally conductive polymer composite material and an article including the same. The thermally conductive polymer composite material includes 15 to 20 parts by weight of a wholly aromatic liquid crystalline polyester resin; and 80 to 85 parts by weight of a thermally conductive additive..
08/14/14
20140227034
Drill reamer
A drill reamer (20) comprises an elongate body (21) disposed about a longitudinal axis. The elongate body comprises flutes (22a-22d) having separate hard cutting sections (27a, 28′a, 28″a, 28′b, 28″b) and a soft cutting section (24a, 24b).
08/14/14
20140226257
Capacitor and method of manufacturing capacitor
A capacitor according to the present invention includes a dielectric layer, a first external electrode layer, a second external electrode layer, a first internal electrode, and a second internal electrode. The dielectric layer is formed of a metal oxide having a crystalline structure and includes a first surface, a second surface on the opposite side to the first surface, and a plurality of through holes communicating with the first surface and the second surface.
08/14/14
20140225956
Solid inks comprising liquid crystalline materials
A solid ink composition used for ink jet printing. In particular, the solid inks comprise a liquid crystalline material that can be jetted in a molten, amorphous state at elevated temperatures, electrically poled to align the molecules in an intermediate liquid crystalline state at lower temperatures, and then frozen into a robust, high quality image upon cooling..
08/14/14
20140225703
Magnetic material and coil component
A magnetic material includes a grain compact in which metal grains having oxide films are compacted, wherein the metal grains are constituted by fe—si-m soft magnetic alloy (where m represents a metal element that oxidizes more easily than iron), the metal grains in the grain compact are mutually bonded with adjacent metal grains by inter-bonding of their oxide films, and at least some of this bonding of oxide films takes the form of bonding of crystalline oxides, or preferably at least some of the bonding of oxides is based on continuous lattice bond. A coil component has a coil on an interior or surface of an element body wherein the element body uses the magnetic material..
08/14/14
20140225127
Monocrystalline sic substrate with a non-homogeneous lattice plane course
A method is used for producing an sic volume monocrystal by sublimation growth. During growth, by sublimation of a powdery sic source material and by transport of the sublimated gaseous components into the crystal growth region, an sic growth gas phase is produced there.
08/14/14
20140225115
Tensile polycrystalline silicon film having stable resistivity and method of fabricating thereof
Tensile polycrystalline silicon films having improved resistivity and less variability or more stable resistivity in finished semiconductors are provided. The methods of manufacturing such polycrystalline silicon films include application of protective film or film layer prior to annealing the semiconductor.
08/14/14
20140225109
Semiconductor device
The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved.
08/14/14
20140225055
Resistive switching device for a non-volatile memory device
A method for forming a non-volatile memory device configured with a resistive switching element includes providing a substrate having a surface region, depositing a first dielectric material overlying the surface region, forming a first wiring structure overlying the first dielectric material, forming a contact layer of doped polycrystalline silicon containing material overlying the first wiring structure, forming a switching layer of resistive switching material over the contact layer, removing native oxide formed on a top surface of the switching layer, if any, depositing a metal layer of an active metal directly upon the top surface of the switching layer, and depositing a second wiring structure overlying the metal layer, wherein the top surface of the switching layer is cleaned of the native oxide, if any, to reduce agglomeration of the active metal.. .
08/14/14
20140225030
Method of controlling the crystallinity of a silicon powder
A method of controlling the crystallinity of a silicon powder may include heating a reactor to a temperature of no more than 650° c., and flowing a feed gas comprising silane and a carrier gas into the reactor at a molar gas flux of from about 5 mol/min/m2 to about 25 mol/min/m2. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon.
08/14/14
20140224550
Cutting elements and tools comprising interbonded grains of diamond and related compositions
Cutting elements include at least one metal diffused into interbonded grains of diamond. Earth-boring tools include at least one such cutting element.
08/14/14
20140224539
Pdc sensing element fabrication process and tool
A polycrystalline diamond compact (pdc) cutter for a rotary drill bit is provided with an integrated sensor and circuitry for making measurements of a property of a fluid in the borehole and/or an operating condition of the drill bit. A method of manufacture of the pdc cutter and the rotary drill bit is discussed..
08/14/14
20140224333
Photoelectric conversion device
A photoelectric converter is disclosed. The photoelectric converter includes a light-absorbing layer.
08/14/14
20140224317
Optoelectronic devices with thin barrier films with crystalline characteristics that are conformally coated onto complex surfaces to provide protection against moisture
The present invention provides optoelectronic devices containing at least one conforming, thin film barrier coating provided on a nonplanar surface comprising a plurality of junctures. The barrier coating has a hybrid morphology including crystalline domains distributed in an amorphous matrix.
08/14/14
20140224307
Interdigitated back contact heterojunction photovoltaic device
A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer.
08/14/14
20140224306
Interdigitated back contact heterojunction photovoltaic device with a floating junction front surface field
A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer.
08/14/14
20140224172
Device for manufacturing a crystalline material from a crucible having non-uniform heat resistance
The device forming a crucible for fabrication of crystalline material by directional solidification comprises a bottom and at least one side wall. The bottom presents a first portion having a first thermal resistance and a second portion having a second thermal resistance that is lower than the first thermal resistance.
08/14/14
20140224156
Cement compositions containing nano sized boehmite crystallites
A composition comprising cement and nano-sized crystalline particles of boehmite alumina or nano-sized crystalline particles of boehmite alumina which have been modified by the inclusion of silicon oxide, calcium oxide, or magnesium oxide. The boehmite alumina has an average crystallite size from about 2 nm to about 80 nm and a content of non-crystalline alumina of less than about 25 mol percent based on total aluminum..
08/14/14
20140223836
Composite cutter substrate to mitigate residual stress
A cutting element may include a polycrystalline diamond layer and a reduced-cte substrate comprising diamond particles disposed in a matrix material, wherein the diamond particles have a contiguity of 15% or less. Also, a cutting element may include a polycrystalline diamond layer and a reduced-cte substrate comprising a matrix material, at least one diamond-filled region, and embedded diamond particles..
08/14/14
20140223763
Vacuum storage method and device for crystalline material
The present invention provides a method for storing a raw material inside a mold or a crucible, comprising the steps of: closing an opening of the mold filled with the raw material of a sintered metal or an opening of the crucible filled with the raw material for encouraging growth of a crystal for a semiconductor of a gallium arsenide crystal and a silicon single crystal or a polycrystalline silicon by a cap provided with a supply pipe and a vacuum evacuation pipe; vacuuming the inside the mold or crucible to a high vacuum state of 10−4 torr or less via the vacuum evacuation pipe; drying by heating the raw material in the mold or crucible filled with a heated inert gas in the range of 50 c to 200 c via the supply pipe; and storing the raw material in the mold or the crucible covered with the cap.. .
08/07/14
20140223394
Methods for manufacturing integrated circuit devices having features with reduced edge curvature
A structure, such as an integrated circuit device, is described that includes a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in etching the line. Techniques are described for processing a line of crystalline phase material which has already been etched using the mask element, in a manner which straightens an etched sidewall surface of the line.
08/07/14
20140221922
Absorbable crystalline polyether-ester-urethane-based bioactive luminal liner compositions
Bioactive hydroforming luminal liner compositions are formed of an absorbable crystalline amphiphilic polyether-ester-urethane dissolved in a liquid derivative of a polyether glycol that undergoes transformation into a tissue-adhering, resilient interior cover or liner for the controlled release of its bioactive payload at clinically compromised conduits in humans as in the case of bacteria- and yeast-infected vaginal canals, esophagi, and arteries following angioplasty.. .
08/07/14
20140221690
Process for the preparation of crystalline forms of agomelatine and novel polymorph thereof
The invention concerns a new process for the preparation of two crystalline forms of agomelatine, in particular a process for preparation of form i and a new form of agomelatine, here called form vii.. .
08/07/14
20140221656
Crystalline solvates of 6-(piperidin-4-yloxy)-2h-isoquinolin-1-one hydrochloride
The present invention relates to crystalline solvates of 6-(piperidin-4-yloxy)-2h-isoquinolin-1-one hydrochloride, processes for their preparation and the use thereof.. .
08/07/14
20140221595
High purity diphenyl sulfone, preparation and use thereof for the preparation of a poly(aryletherketone)
The presence of certain impurities in diphenyl sulfone have a deleterious effect on the properties of the poly(aryletherketone)s produced therein, including one or more of color, melt stability, molecular weight, crystallinity, etc. And here identify those impurities and provide processes for the recovery of the diphenyl sulfone..
08/07/14
20140221566
Polyester powder compositions, methods and articles
Powder compositions and articles and methods of forming articles from powder compositions are provided. In one embodiment the powder compositions include at least one polyester polymer powder and an amount of reinforcing particles having an aspect ratio of preferably at least about 5:1.
08/07/14
20140221443
Novel hydrogen sulfate salt
The present invention relates to compound 1 hydrogen sulfate salt and solvates, crystalline forms and amorphous forms thereof, and to processes for their preparation.. .
08/07/14
20140221438
Novel solid forms of epalrestat
The invention relates to novel crystalline salts of 5-[(1z,2e)-2-methyl-3-phenylpropenylidene]-4-oxo-2-thioxo-3-thiazolidineacetic acid and a novel betaine cocrystal of 5-[(1z,2e)-2-methyl-3-phenylpropenylidene]-4-oxo-2-thioxo-3-thiazolidineacetic acid. The preparation and characterization of the novel crystalline salts and cocrystal according to various embodiments of the invention is described.
08/07/14
20140221190
Crystalline glass composition and adhesive material using same
Provided is a crystallizable glass composition which exhibits a high coefficient of thermal expansion after undergoing thermal treatment, has excellent fluidity during the thermal treatment, and is less likely to deteriorate the hermeticity and adhesiveness at bonded portions and volatilize glass components even when exposed to high temperatures for a long period after the thermal treatment. A crystallizable glass composition capable of precipitating mgo-based crystals as main crystals by thermal treatment, the crystallizable glass composition containing, in terms of % by mole in glass component composition, 0.1 to 30% la2o3+nb2o5+y2o3+ta2o5+yb2o3..
08/07/14
20140220779
Surface selective polishing compositions
The disclosure provides polishing compositions that show a high polishing rate ratio of a silicon nitride (sin) surface to a silicon oxide surface, and/or of a sin surface to a polycrystalline silicon (poly si) surface. Such compositions comprise, in certain aspects, of colloidal silica, and one or more water soluble polymers, and has a ph of 6 or less, wherein the colloidal silica comprises one or more organic acids bound to its surface, and the water soluble polymer is a polyoxyalkylene hydrocarbyl ether which hydrocarbyl moiety has 12 or more carbon atoms..
08/07/14
20140220766
Planar semiconductor growth on iii-v material
A semiconductor structure includes a iii-v monocrystalline layer and a germanium surface layer. An interlayer is formed directly between the iii-v monocrystalline layer and the germanium surface layer from a material selected to provide stronger nucleation bonding between the interlayer and the germanium surface layer than nucleation bonding that would be achievable directly between the iii-v monocrystalline layer and the germanium surface layer such that a continuous, relatively defect-free germanium surface layer is provided..
08/07/14
20140220764
Thin film wafer transfer and structure for electronic devices
A method for wafer transfer includes forming a spreading layer, including graphene, on a single crystalline sic substrate. A semiconductor layer including one or more layers is formed on and is lattice matched to the crystalline sic layer.
08/07/14
20140220486
Toner
Provided is a toner containing toner particles, each of which includes a binder resin containing a polyester as a main component, a colorant, and a wax, in which the binder resin includes a block polymer in which a segment capable of forming a crystalline structure and a segment incapable of forming a crystalline structure are bonded, the toner has a maximum endothermic peak from the binder resin, as determined by differential scanning calorimetry measurement, with a peak temperature in a specific range and with an endothermic quantity in a specific range, and the wax is an ester wax having a functionality of 3 or more.. .
08/07/14
20140220347
Electrode composition comprising a silicon powder and method of controlling the crystallinity of a silicon powder
An electrode composition comprises a silicon powder comprising non-crystalline and crystalline silicon, where the crystalline silicon is present in the silicon powder at a concentration of no more than about 20 wt. %.
08/07/14
20140220329
Clear graphic cling films
The instant invention provides a polymer composition suitable for clear graphic cling film applications, method of producing the same, articles made therefrom, and methods for making such articles. The polymer composition suitable for clear graphic cling film applications, according to the present invention, comprises: (a) a polyolefin composition selected from the group consisting of a propylene-based composition, and an ethylene-based composition, wherein the propylene-based composition has an melt flow rate in the range of from 2 to 8 g/10 minutes, a dynamic mechanical spectroscopy (dms) value in the range of from 3700 to 10100 pascal-seconds at 0.1 radian per second, and from 650 to 1200 pascal-seconds at 100 radian per second measured at 190° c., and having a crystallinity in the range of from at least 4 percent by weight to 11 percent by weight, and a heat of fusion of in the range of from 6 to 19 joules/gram, and a dsc melting point of less than 110° c.
08/07/14
20140220301
Epitaxial substrate having nano-rugged surface and fabrication thereof
The invention provides an epitaxial substrate and fabrication thereof. The epitaxial substrate according to the invention includes a crystalline substrate.
08/07/14
20140220261
Microwave plasma reactors
Microwave plasma assisted reactors, for example chemical vapor deposition (mpcvd) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 torr) and high power densities (>150 w/cm3), and thereby enable high deposition rate cvd processes that rapidly deposit materials.
08/07/14
20140220123
Pharmaceutical compositions comprising niacin and a process for their preparation
A process for the manufacture of compositions containing niacin, the process including a first compaction step of niacin or a pharmaceutically acceptable salt thereof, then a second compaction step of a dry blend comprising niacin and microcrystalline cellulose and a further compression step into tablets. Stable tablet compositions including niacin are capable of extended release of niacin..
08/07/14
20140220120
Crystal entecavir, crystal entecavir formulation and methods for the preparation thereof
The present invention relates to a pharmaceutical composition for treating hepatitis b virus infection comprising crystalline entecavir as the pharmaceutically active ingredient and one or more pharmaceutically acceptable excipients. The tablet and capsule of the pharmaceutical composition have improved stability compared to that of amorphous entecavir under the conditions of light, high temperature and high humidity..
08/07/14
20140219967
Poly (3-hydroxybutyrate/3-hydroxyvalerate) of lowered crystallinity for use in animal feed
Animal feed conversion ratio can be increased and blood glucose levels can be decreased by feeding an efficacious amount of dispersible amorphous poly(3-hydroxybutyrate/3-hydroxyvalerate).. .
08/07/14
20140219954
Dry powder formulations of organic macromolecules
The present invention relates to methods for making a stabilized powder formulation for inhalation comprising a macromolecule in lyophilized form, a crystalline carrier material, and magnesium stearate.. .
08/07/14
20140219935
Topical bioadhesive formulations
The present invention relates to topical bioadhesive formulations comprising low viscosity, non-liquid crystalline, mixtures of: a) at least one neutral diacyl lipid and/or at least one tocopherol; b) at least one phospholipid; c) at least one biocompatible, oxygen containing, low viscosity organic solvent; wherein at least one bioactive agent is dissolved or dispersed in the low viscosity mixture and wherein the pre-formulation forms, or is capable of forming, at least one liquid crystalline phase structure upon contact with an aqueous fluid. The invention additionally relates to a method of delivery of an active agent comprising administration of a preformulation of the invention, a method of treatment comprising administration of a preformulation of the invention and the use of a preformulation of the invention in a method for the manufacture of a medicament..
08/07/14
20140219722
Method and apparatus for forming and applying retroreflective pavement markings
A method for forming and applying retroreflective pavement markings comprising the steps of a) spraying the area with a hot epoxy binder, b) depositing particles of a microcrystalline ceramic element having a high refractive index onto the fresh epoxy binder, c) depositing relatively large spherical glass beads onto the fresh epoxy binder, and d) depositing relatively small spherical glass beads onto the fresh epoxy binder. The small beads provide high reflectivity in daytime and at night on dry pavement.
08/07/14
20140218674
Liquid crystalline polymer lens structure
A liquid crystalline polymer lens structure includes a refractive index distribution film, a lens and a flexible substrate. The flexible substrate is laminated on the surface of the lens, and the refractive index distribution film is encapsulated inside the flexible substrate.
08/07/14
20140217553
Template layers for heteroepitaxial deposition of iii nitride semiconductor materials using hvpe processes
Methods of depositing iii-nitride semiconductor materials on substrates include depositing a layer of iii-nitride semiconductor material on a surface of a substrate in a nucleation hvpe process stage to form a nucleation layer having a microstructure comprising at least some amorphous iii-nitride semiconductor material. The nucleation layer may be annealed to form crystalline islands of epitaxial nucleation material on the surface of the substrate.
08/07/14
20140217489
A method of making a split gate non-volatile floating gate memory cell having a separate erase gate, and a memory cell made thereby
A non-volatile memory cell has a single crystalline substrate of a first conductivity type with a top surface. A first region of a second conductivity type is in the substrate along the top surface.
08/07/14
20140217468
Planar semiconductor growth on iii-v material
A semiconductor structure includes a iii-v monocrystalline layer and a germanium surface layer. An interlayer is formed directly between the iii-v monocrystalline layer and the germanium surface layer from a material selected to provide stronger nucleation bonding between the interlayer and the germanium surface layer than nucleation bonding that would be achievable directly between the iii-v monocrystalline layer and the germanium surface layer such that a continuous, relatively defect-free germanium surface layer is provided..
08/07/14
20140217458
Method for manufacturing light-emitting element, and light-emitting element
Provided are a method of manufacturing a light-emitting element by which a light-emitting element (80) is manufactured through the following steps and a light-emitting element manufactured by employing the method. A light-emitting element layer (40) is formed on one face (32t) of a monocrystalline substrate (30a) for a light-emitting element.
08/07/14
20140217356
Thin film wafer transfer and structure for electronic devices
An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material.
08/07/14
20140217325
Liquid-crystalline medium and high-frequency components comprising same
The present invention relates to liquid-crystalline media and to high-frequency components comprising same, especially microwave components for high-frequency devices, such as devices for shifting the phase of microwaves, in particular for microwave phased-array antennas.. .
08/07/14
20140216925
Single target sputtering of copper zinc tin sulfide selenide, czt(s, se)
A method of forming a czt(s,se) thin film from a quaternary target involves sputtering a quaternary target onto a substrate, wherein the quaternary target comprises (a) copper, (b) zinc, (c) tin, and (d) selenium and/or sulfur, wherein each component (a) through (d) is present in the quaternary target within ±50% of a 2:1:1:4 molar ratio, respectively, thereby forming a czt(s,se) thin film on the substrate, wherein the czt(s,se) thin film has a kesterite crystalline phase and a band gap of about 1.0 to 1.5 ev. In an embodiment, a ternary target is employed..
08/07/14
20140216539
Interdigitated electrical contacts for low electronic mobility semiconductors
Structures useful for forming contacts to materials having low charge carrier mobility are described. Methods for their formation and use are also described.


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Crystallin topics: Crystallin, Interstitial, Crystallinity, Binder Material, Electrolyte, Hydrocracking Process, Phase Shift, Semiconductor, Semiconductor Device, Nutritional Supplement, Alkali Metal, Tocopherol, Magnetic Field, Compliance, Anisotropy

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0.4183

3346

449590 - 0 - 72