FreshPatents.com Logo
Enter keywords:  

Track companies' patents here: Public Companies RSS Feeds | RSS Feed Home Page
Popular terms

[SEARCH]

Crucible topics
Czochralski
Ion Source
Silicon Nitride
Heating Devices
Semiconductor
Semiconductor Material
Growth Chamber
Electrolysis
Electrolyte
Crystal Growth
Silicon Ingot
Accommodation
Crystallin
Silicon Carbide
Molten Silicon

Follow us on Twitter
twitter icon@FreshPatents

Web & Computing
Cloud Computing
Ecommerce
Search patents
Smartphone patents
Social Media patents
Video patents
Website patents
Web Server
Android patents
Copyright patents
Database patents
Programming patents
Wearable Computing
Webcam patents

Web Companies
Apple patents
Google patents
Adobe patents
Ebay patents
Oracle patents
Yahoo patents

[SEARCH]

Crucible patents



      
           
This page is updated frequently with new Crucible-related patent applications. Subscribe to the Crucible RSS feed to automatically get the update: related Crucible RSS feeds. RSS updates for this page: Crucible RSS RSS


Device for manufacturing a crystalline material from a crucible having non-uniform heat resistance

Vacuum storage method and device for crystalline material

Date/App# patent app List of recent Crucible-related patents
08/14/14
20140227443
 Gas system for reactive deposition process patent thumbnailGas system for reactive deposition process
A gas lance unit configured for a reactive deposition process with a plurality of spaced apart crucibles, wherein spaces are provided between the crucibles, is described. The gas lance unit includes a gas guiding tube having one or more outlets for providing a gas for the reactive deposition process, and a condensate guiding element for guiding a condensate, particularly an aluminum condensate, to one or more positions above the spaces..
08/14/14
20140224446
  patent thumbnail
The present invention relates to a base material for high temperature alloy and a process for manufacturing the same. The base material includes following components (by weight): 10-45% cr, 0.5-12% nb, 0.7-2.5% ti, ≦9.0% mo, ≦8.0% w, ≦2% mn, ≦1.0% si, ≦2.0% al, ≦0.5% c, ≦0.032% o, ≦0.032% n,≦0.01% s, ≦0.02% p, and balance being fe and unavoidable impurities.
08/14/14
20140224172
 Device for manufacturing a crystalline material from a crucible having non-uniform heat resistance patent thumbnailDevice for manufacturing a crystalline material from a crucible having non-uniform heat resistance
The device forming a crucible for fabrication of crystalline material by directional solidification comprises a bottom and at least one side wall. The bottom presents a first portion having a first thermal resistance and a second portion having a second thermal resistance that is lower than the first thermal resistance.
08/14/14
20140223763
 Vacuum storage method and device for crystalline material patent thumbnailVacuum storage method and device for crystalline material
The present invention provides a method for storing a raw material inside a mold or a crucible, comprising the steps of: closing an opening of the mold filled with the raw material of a sintered metal or an opening of the crucible filled with the raw material for encouraging growth of a crystal for a semiconductor of a gallium arsenide crystal and a silicon single crystal or a polycrystalline silicon by a cap provided with a supply pipe and a vacuum evacuation pipe; vacuuming the inside the mold or crucible to a high vacuum state of 10−4 torr or less via the vacuum evacuation pipe; drying by heating the raw material in the mold or crucible filled with a heated inert gas in the range of 50 c to 200 c via the supply pipe; and storing the raw material in the mold or the crucible covered with the cap.. .
08/07/14
20140216348
 Apparatus for fabricating ingot patent thumbnailApparatus for fabricating ingot
An apparatus for fabricating an ingot comprises an inner crucible for receiving a raw material; a seed holder placed on the raw material; and an outer crucible surrounding the inner crucible and comprising an open area in which a part of the raw material is exposed.. .
08/07/14
20140216330
 Apparatus for fabricating ingot and method for fabricating ingot patent thumbnailApparatus for fabricating ingot and method for fabricating ingot
An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material; and a filter part for selectively filtering a specific component in the crucible, wherein the filter part comprises a polymer.. .
07/31/14
20140209712
 Method for large scale synthesis of optically stimulated luminescence grade polycrystalline ceramic material patent thumbnailMethod for large scale synthesis of optically stimulated luminescence grade polycrystalline ceramic material
A method for the synthesis of osl grade polycrystalline mass of ceramic materials with dopant c involving source ceramic material preferably in its readily available powder form comprising the steps of melting of the said ceramic material in graphite environment including a graphite crucible/container in vacuum; and obtaining there from polycrystalline aggregate by rapid solidification of said melt to thereby provide said polycrystalline mass of ceramic materials with dopant c of optically stimulated luminescence grade. The said powder form of the ceramic material is compacted and formed into pellets before subjecting to melting..
07/31/14
20140209218
 Method of alloying reactive components patent thumbnailMethod of alloying reactive components
Metal ingots for forming single-crystal shape-memory alloys (smas) may be fabricated with high reliability and control by alloying thin layers of material together. In this improved method, a reactive layer (e.g., aluminum) is provided in thin flat layers between layers of other materials (e.g., copper and layers of nickel).
07/24/14
20140205837
 Single-crystal ingot, apparatus and method for manufacturing the same patent thumbnailSingle-crystal ingot, apparatus and method for manufacturing the same
Disclosed is a single-crystal ingot manufacturing apparatus, which includes a crucible in which a melt is accommodated, a heater configured to heat the crucible, a heat shield member configured to shield radiant heat from the heater and the melt, and a neck cover configured to encompass a seed crystal unit above the crucible with being introduced into an opening of the heat shield member, the radiant heat being not shielded in the opening, the neck cover being vertically moved in linkage to vertical movement of the seed crystal unit within a predetermined range.. .
07/24/14
20140205527
 Method of producing gaas single crystal and gaas single crystal wafer patent thumbnailMethod of producing gaas single crystal and gaas single crystal wafer
A method of producing a gaas single crystal having high carrier concentration and high crystallinity and to provide a gaas single crystal wafer using such a gaas single crystal. In the method of producing a gaas single crystal, a vertical boat method is performed with a crucible receiving a seed crystal, a si material, a gaas material serving as an impurity, solid silicon dioxide, and a boron oxide material, thereby growing a gaas single crystal..
07/24/14
20140202597
Crucible materials
One embodiment provides an article, comprising: an inner container having a cavity, the inner container comprising a ceramic; and an outer container, the outer container comprising a susceptor; wherein at least a portion of an outer surface of the inner container is in contact with an inner surface of the outer container, and wherein the inner container is removable from the mold. Methods of melting using the present article are also provided..
07/24/14
20140202389
Apparatus for fabricating ingot
Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible receiving a raw material, and comprising an upper portion and a lower portion opposite to each other, and seed holders disposed at the upper and lower portions, respectively..
07/24/14
20140202379
Crucibles made with the cold form process
A crucible for growing crystals, the crucible being formed from molybdenum and rhenium. A crucible for growing crystals, the crucible being formed from a metal selected from group v of the periodic table of the elements.
07/24/14
20140202377
Crucible for producing compound crystal, apparatus for producing compound crystal, and method for producing compound crystal using crucible
A crucible for use in producing a compound crystal in which a pre-treated product is made by melting a powdery or granular compound raw material and then cooling and solidifying it in a pre-treatment furnace, and the compound crystal is grown by melting the pre-treated product and then cooling and solidifying it in a crystal growing furnace, the crucible comprising: a first member having a bottom portion and a cylindrical portion; and a hollow cylindrical second member that is capable to be connected to the cylindrical portion and to be separated therefrom, wherein: in a state in which the first member and the second member are connected together, a large capacity crucible for manufacture of the pre-treated product is formed; and in a state in which the first member and the second member are separated from one another, a small capacity crucible for crystal growth is formed.. .
07/17/14
20140196659
Apparatus for fabricating ingot and method for fabricating ingot
An apparatus for fabricating an ingot includes a crucible for receiving a raw material, wherein the raw material has a shape extending in one direction.. .
07/10/14
20140190413
Apparatus for fabricating ingot
Disclosed is an apparatus for fabricating an ingot. The apparatus comprises a crucible to receive a source material, and a temperature difference compensating part on the source material.
07/10/14
20140190412
Apparatus for fabricating ingot
Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible to receive a raw material, and a filter part to allow a specific component in the crucible to selectively pass through the filter part.
07/10/14
20140190402
Apparatus and method for manufacturing ingot
Disclosed are an apparatus and a method for fabricating an ingot. The apparatus includes a crucible receiving source materials therein; a holder fixing a seed located above the source materials; and an adhesive layer interposed between the holder and the seed and chemically bonded to the seed..
07/10/14
20140190398
System for manufacturing a crystalline material by directional crystallization provided with an additional lateral heat source
The crystallization system includes a crucible provided with a bottom and with side walls designed to contain the material to be solidified and a device for creating a main thermal gradient inside the crucible in a perpendicular direction to the bottom of the crucible. An additional inductive heating device is arranged at the level of the side walls of the crucible facing the liquid material and without overlapping with the solid phase.
07/10/14
20140190397
Ingot growing apparatus and method of manufacturing ingot
Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit.
07/03/14
20140182807
Method for manufacturing titanium ingot
The present invention is a method for manufacturing a titanium ingot (30), the method being characterized by comprising: a step of melting a titanium alloy for a predetermined time by cold crucible induction melting (ccim); a step of supplying molten titanium (6) to a cold hearth (10), and separating high density inclusions (hdis)(8) by precipitation in the cold hearth (10) while spraying a plasma jet or an electron beam onto the bath surface of the molten titanium (6); and a step of supplying a molten titanium starting material from which the hdis (8) are separated by precipitation to a mold (20) to obtain the titanium ingot.. .
07/03/14
20140182803
Method and device for the aluminothermic welding of rails
The invention also concerns a mould (1) adapted to fit over the two rail ends to form a moulding cavity (10), comprising a crucible (4) arranged above the region of the rail head so that it is fed with molten metal from the moulding cavity (10) via a secondary channel (42).. .
07/03/14
20140182516
Apparatus for fabricating ingot
The present invention relates to an apparatus for fabricating ingot including a crucible to accommodate a material, a top cover enclosing the circumference of the temperature difference compensative part, and a heat insulator to be disposed on the top cover.. .
07/03/14
20140182511
Protective coating to prevent reaction between graphite susceptor and quartz crucible
A susceptor for supporting a crucible includes a body with an interior surface defining a cavity. A coating is disposed on the interior surface to provide a barrier for preventing contact between the body of the susceptor and the crucible disposed within the cavity..
06/26/14
20140178286
Device for removing liquid silicon from a crucible
A device for taking up a silicon melt comprises at least one block of a refractory with a capillary structure.. .
06/26/14
20140174341
Crucible for growing crystals
A crucible for growing crystals, in particular a sapphire single crystal, includes a base crucible made of w, mo, re or an alloy of these materials and an inner lining made of w, mo, re or an alloy of these materials. The base crucible has a substantially pot-like form.
06/26/14
20140174339
Method for manufacturing silicon single crystal
There is provided a method for manufacturing a silicon single crystal, the method includes: a raw material melting step of melting polycrystalline silicon accommodated in a crucible to obtain a silicon melt; and bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to grow the silicon single crystal, wherein, after the raw material melting step and before the pulling step, there are performed: a cristobalitizing step of leaving the silicon melt at a predetermined number of rotations of the crucible with a predetermined gas flow rate and a predetermined furnace pressure to generate cristobalite while applying a magnetic field; and a dissolving step of partially dissolving the cristobalite by carrying out any one of an increase in number of rotations of the crucible, an increase in gas flow rate, and a reduction in furnace pressure beyond counterpart figures in the cristobalitizing step.. .
06/26/14
20140174337
Weir for inhibiting melt flow in a crucible
A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein.
06/26/14
20140174129
Support holder for quartz dip stick in directional solidification system furnaces
A support fixture for use in a directional solidification system for the production of multi-crystalline ingots having a housing with a passage that extends into an inner assembly having a crucible includes a collar, an alignment bracket, and an arm. The collar has a mounting structure for attaching the collar to the housing.
06/19/14
20140166502
A process for recovering metals and an electrolytic apparatus for performing the process
A process for recovering at least one metal from a metal containing resource, in particular containing at least one metal oxide. The process including the step: providing a crucible containing a chloride salt melt, at least one cathode and an anode connected to the salt melt, heating means for heating the salt melt, and an aluminum melt present at the bottom of the crucible, said aluminum melt forming a part of the anode..
06/19/14
20140165914
Organic material deposition apparatus
An organic material deposition apparatus includes a chamber, a substrate support unit, a rail, a driving apparatus, a plate heating apparatus, and a plate cooling apparatus. The substrate support unit is disposed in an upper portion of the chamber and supports the substrate.
06/19/14
20140165905
Apparatus for fabricating ingot and method for fabricating ingot
Disclosed are an apparatus for fabricating an ingot and a method for fabricating the ingot. The apparatus comprises a crucible to receive a source material, and a guide member over the source material.
06/12/14
20140158042
Apparatus for fabricating ingot
An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material; and a seed holder for fixing a seed disposed over the raw material, wherein a buffer layer is placed between the seed holder and the seed.. .
06/05/14
20140152980
Inspection device for substrate deformation at high temperatures and inspection method for substrate deformation at high temperatures using the same
There are provided an inspection device for substrate deformation at high temperatures and an inspection method for substrate deformation at high temperatures, the inspection device for substrate deformation at high temperatures, including a crucible including an internal space, an inspection hole disposed in an upper portion thereof so as to inspect the internal space, and a heating unit heating the internal space, an indenter tip disposed in the crucible such that a substrate fixed to the internal space is warped, and an inspection unit disposed above the crucible so as to inspect a cross-section of the substrate.. .
06/05/14
20140150986
Crucible and extrinsic facecoat compositions and methods for melting titanium and titanium aluminide alloys
Crucible compositions and methods of using the crucible compositions to melt titanium and titanium alloys. More specifically, crucible compositions having extrinsic facecoats comprising a rare earth oxide that are effective for melting titanium and titanium alloys for use in casting titanium-containing articles.
06/05/14
20140150717
Device for manufacturing semiconductor or metallic oxide ingot
Provided is an apparatus for manufacturing a semiconductor or metal oxide ingot by sequentially inducing a liquid-to-solid phase transition of a liquid raw material following a solidification direction, the apparatus including: a crucible containing a semiconductor or metal oxide raw material; a cooling unit spaced apart from the crucible at a predetermined distance in a vertical direction, when a height direction of the crucible is designated by the vertical direction and a direction perpendicular to the vertical direction is designated by a horizontal direction; a first heating unit spaced apart from the crucible at a predetermined distance in the horizontal direction and surrounding a circumferential surface of the crucible; and an insulating member provided between the crucible and the cooling unit in the horizontal direction, a position of the insulating member being shifted by a shifting unit.. .
06/05/14
20140150714
Method of coating quartz crucible for growing silicon crystal, and quartz crucible for growing silicon crystal
A coating method for coating a crucible and a quartz crucible for growing a silicon crystal are provided. In the coating method, a bubble-free quartz layer which is 80 μm to 4 mm thick is formed on an inner surface of a crucible for growing a silicon crystal, and the surface of the bubble-free quartz layer is covered with alkaline earth hydroxide, following which heating is performed to a temperature at which the surface becomes devitrified.
05/29/14
20140147992
Method and device for continuously coating substrates
The invention relates to a method for the continuous coating of at least one substrate 14 with a semiconductor material e.g. Cdte.
05/29/14
20140147801
Graphite crucible
There is provided a graphite crucible including a bottom part, a body part, a treatment part including an input port, and a gas discharge part that is closed at a lower end side and is opened at an upper end side of the body part. Since graphite is porous, at the time when graphite is eluted into an object to be treated or is consumed, a gas in the pores of a graphite crucible is released as air bubbles continuously into the molten object to be treated.
05/29/14
20140144372
Weir for improved crystal growth in a continuous czochralski process
An apparatus for growing ingots by the czochralski method includes a growth chamber defining an enclosure configured to circulate a purge gas about the growing ingot and a crucible provided in the growth chamber configured to hold the molten silicon. A weir is supported in the crucible and is configured to separate the molten silicon into an inner growth region surrounding the melt/crystal interface from an outer region configured to receive the crystalline feedstock.
05/29/14
20140144371
Heat shield for improved continuous czochralski process
An apparatus for growing ingots by the czochralski method is described. The ingots are drawn from a melt/crystal interface in a quantity of molten silicon replenished by crystalline feedstock.
05/15/14
20140131911
Cartridge reactor for production of materials via the chemical vapor deposition process
The present invention overcomes the limitations of siemens reactors by providing for the deposition reaction to occur inside of a sealed crucible rather than inside of the overall cavity of a water-cooled reactor. The crucible itself is positioned inside of a cartridge reactor, which can have heat shields between crucible and the reactor walls to significantly reduce radiant energy losses.
05/08/14
20140127124
Graphitization furnace and method for producing graphite
A graphitization furnace (100) includes: split electrodes (122) that are conductive and are provided so as to be freely movable; crucibles (120) that are conductive and that contain carbon powder, with a bottom end portion (122a) of each split electrode (122) being buried in the carbon powder; upper electrodes (190) that are positioned so as to face a split electrode (122); lower electrodes (192) that are positioned so as to face a crucible (120); and a power supply unit (132) that, when a bottom end portion (190a) of an upper electrode (190) is placed in contact with a top end portion (122b) of a split electrode (122) and a top end portion (192a) of a lower electrode (192) is placed in contact with a base portion (120b) of a crucible (120), applies a voltage between the upper electrode (190) and the lower electrode (192).. .
05/08/14
20140123891
Growth determination in the solidification of a crystalline material
A method for producing a crystalline material in a crucible in a crystal growth apparatus is disclosed. The method comprises, in part, the step of determining the amount of solidified material present in a partially solidified melt produced during the growth phase using at least one laser positioned at a height above the crucible.
05/01/14
20140116623
Etching treatment apparatus
Disclosed is an etching treatment apparatus. The etching treatment apparatus includes a crucible to receive a wafer, a wafer jig part having a groove into which the wafer is seated, and a size adjusting part inserted into the groove while making contact with the edge of the wafer..
05/01/14
20140116325
Production apparatus of sic single crystal by solution growth method, method for producing sic single crystal using the production apparatus, and crucible used in the production apparatus
A region of an sic solution in the vicinity of an sic seed crystal is cooled while suppressing the temperature variation in a peripheral region of the sic solution. An apparatus includes a seed shaft and a crucible for an sic solution.
05/01/14
20140116324
Production apparatus and production method of sic single crystal
An apparatus for producing an sic single crystal includes a crucible for accommodating an si—c solution and a seed shaft having a lower end surface where an sic seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage.
04/24/14
20140110077
Casting process and apparatus
A casting method includes coupling a mold to a crucible, the mold having one or more part-defining cavities and one or more feed passageways. A first rotating of the crucible and mold pours molten metal from the crucible through the one or more feed passageways into the one or more part-defining cavities.
04/24/14
20140109829
Linear evaporation source and vacuum deposition apparatus including the same
A linear evaporation source is disclosed. In one aspect, the source includes a crucible storing an evaporated material, a heater unit surrounding the crucible and heating the crucible, and a plurality of lateral reflectors surrounding a lateral surface of the heater unit.
04/24/14
20140109825
Equipment and method for producing crystal by vertical boat method
Equipment for crystal growth by a vertical boat method includes a crucible enclosing a raw material, an ampoule encapsulating the crucible, and a crystal growth heater provided around the ampoule to heat the raw material. The raw material is melted into a raw material melt by the crystal growth heater, and a temperature of the raw material melt is controlled such that a crystal grows in the crucible from a bottom toward a top thereof.
04/17/14
20140103493
Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal
An arrangement for manufacturing a crystal of the melt of a raw material comprises: a furnace having a heating device with one or more heating elements, which are configured to generate a gradient temperature field directed along a first direction, a plurality of crucibles for receiving the melt, which are arranged within the gradient temperature field side by side, and a device for homogenizing the temperature field within a plane perpendicular to the first direction in the at least two crucibles. The arrangement further has a filling material inserted within a space between the crucibles wherein the filling shows an anisotropic heat conductivity.
04/10/14
20140099450
Methods and systems of manufacturing a coated structure on a substrate
A method of manufacturing a coated structure on a substrate includes positioning a substrate in a vapor deposition chamber having a crucible with source material. The method includes evaporating the source material with electron beams from an irradiation source, the evaporated source material being deposited on the substrate as a coating layer.
04/10/14
20140096822
Method for manufacturing a silicon monocrystal seed and a silicon-wafer, silicon-wafer and silicon solar-cell
Within the scope of a silicon-wafer making, in which a silicon monocrystal seed is arranged in the bottom region of a crucible, wherein the silicon monocrystal seed has a seed surface with a {110}-crystal orientation perpendicular to the bottom region of the crucible, in which liquid high-purity silicon is solidified, starting from the seed surface of the silicon monocrystal seed, and in which the silicon block is split into silicon-wafers in such a manner that a wafer surface has a {100}-crystal orientation, wherein the silicon monocrystal seed is manufactured from a silicon monocrystal block, the block axis of which has a [110]-spatial orientation, wherein the silicon monocrystal block is cut-off for forming the seed surface of the silicon monocrystal seed with the {110}-crystal orientation parallel to the block axis.. .
04/10/14
20140096713
Apparatus for float grown crystalline sheets
An apparatus for forming a crystalline sheet from a melt may include a crucible to contain the melt. The apparatus may also include a cold block configured to deliver a cold region proximate a surface of the melt, the cold region operative to generate a crystalline front of the crystalline sheet and a crystal puller configured to draw the crystalline sheet in a pull direction along the surface of the melt, wherein a perpendicular to the pull direction forms an angle with respect to the crystalline front of less than ninety degrees and greater than zero degrees..
04/03/14
20140093658
Methods and systems for joining materials
A method is provided for joining a filler material to a substrate material. The method includes melting the filler material within a melting chamber of a crucible such that the filler material is molten, holding the filler material within the melting chamber of the crucible by electromagnetically levitating the filler material within the melting chamber, and releasing the filler material from the melting chamber of the crucible to deliver the filler material to a target site of the substrate material..
04/03/14
20140093657
Methods and systems for joining materials
A method is provided for joining a filler material to a substrate material. The method includes melting the filler material within a melting chamber of a crucible such that the filler material is molten.
04/03/14
20140090797
Vertical skull melt injection casting
Described herein is a device comprising a crucible, a movable base and a heater; wherein the heater is configured to melt bmg to form molten bmg feedstock in the crucible; wherein the movable base configured to slide along a length of the crucible; wherein the movable base and the crucible are configured to hold the molten bmg feedstock.. .
04/03/14
20140090796
Continuous amorphous feedstock skull melting
Described herein is a method of melting a bulk metallic glass (bmg) feedstock, comprising: feeding the bmg feedstock into a crucible; melting a first portion of the bmg feedstock to form molten bmg, while maintaining a second portion of the bmg feedstock solid; wherein the second portion and the crucible hold the molten bmg.. .
04/03/14
20140090793
Cold chamber die casting of amorphous alloys using cold crucible induction melting techniques
Various embodiments provide systems and methods for casting amorphous alloys. Exemplary casting system may include an insertable and rotatable vessel configured in a non-movable induction heating structure for melting amorphous alloys to form molten materials in the vessel.
04/03/14
20140090592
Continuous sapphire growth
Systems and methods for continuous sapphire growth are disclosed. One embodiment may take the form of a method including feeding a base material into a crucible located within a growth chamber, heating the crucible to melt the base material and initiating crystalline growth in the melted base material to create a crystal structure.
03/27/14
20140083645
Cold chamber die casting with melt crucible under vacuum environment
Exemplary embodiments described herein relate to methods and systems for casting metal alloys into articles such as bmg articles. In one embodiment, processes involved for storing, pre-treating, alloying, melting, injecting, molding, etc.
03/27/14
20140083638
Temperature regulated melt crucible for cold chamber die casting
Disclosed is a vessel for melting and casting meltable materials. The vessel may be a surface temperature regulated vessel for providing a substantially non-wetting interface with the molten materials.
03/27/14
20140083350
Method of producing group iii-v compound semiconductor single crystal
Provided is a method of producing a group iii-v compound, comprising: producing a raw material by housing a group iii-v compound semiconductor crystal containing group iii element and group v element and an impurity in a crucible, and heating and melting the group iii-v compound semiconductor crystal in a state that a surface of the group iii-v compound semiconductor crystal to an atmosphere in the crucible; growing the group iii-v compound semiconductor single crystal by heating the raw material and an encapsulant by adding the encapsulant into the crucible in which the raw material is housed, and making a seed crystal in contact with a melt of the raw material with a liquid surface covered by the encapsulant in a liquid state, and lifting the seed crystal.. .
03/27/14
20140083349
Removable thermal control for ribbon crystal pulling furnaces
A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing a crucible..
03/27/14
20140083250
Crucible and dual frequency control method for semi-liquid metal processing
A semi-liquid metal processing apparatus and method are presented in which a semi-liquid metal and/or semi-solid metal is introduced into a crucible and his electromagnetically stirred at a first frequency while cooling, and thereafter sidewalls of a metal charge formed of the semi-liquid metal and/or semi-solid metal are partially melted prior to tilting the crucible for removal of the metal charge.. .
03/20/14
20140076465
Method of alloying reactive components
Metal ingots for forming single-crystal shape-memory alloys (smas) may be fabricated with high reliability and control by alloying thin layers of material together. In this method, a reactive layer (e.g., aluminum) is provided in thin flat layers between layers of other materials (e.g., copper and layers of nickel).
03/20/14
20140076463
Master alloy production for glassy aluminum-based alloys
Apparatus is provided for forming aluminum alloy ingots in a sealed chamber having a source of inert gas using a crucible positioned inside the chamber for melting aluminum alloy powder. The crucible has a solid top and a source of inert gas therein.
03/20/14
20140075997
Silicon purification method and silicon purification device
The silicon purification method uses a silicon purification device including at least a crucible for loading a silicon metal and a plasma torch, and purifies the silicon metal by injecting a plasma gas from the plasma torch toward a melt surface of the silicon metal loaded in the crucible in a state where an angle formed by the melt surface and the plasma gas is set in the range of 20° to 80°.. .
03/13/14
20140072710
Method for the infiltration of a porous material with a second material related plant
A method for treating a piece (1) made of a first porous material (8) with a second material (2) when this second material is in liquid state, said second material (2) being suitable for infiltration when a predetermined temperature range (dti) and a predetermined field of infiltration pressure (dpi), comprises the steps of: —providing a crucible (4) suitable for containing the piece (1) and the second material (2) and capable of withstanding the temperatures and pressures for the infiltration of the second material (2) in the piece (1); providing a cover (5) for the crucible (4) suitable for closing the crucible creating a chamber (6) inside the crucible; placing the piece (1) and the second material (2) in said crucible chamber (6), when this second material is not yet in liquid state; —subsequently closing the crucible (4) with the cover (5); —at a pressure (pa or pa1)—unsuitable for the infiltrations of the second material in the first porous material, raising the temperature of the piece (1) and the second material (2) contained in the crucible up to a predetermined temperature (t2) suitable for liquefying said second material (2) for making it suitable for infiltration in said piece (1) made of first porous material; —subsequently, lowering the pressure to a predetermined pressure value (p2) lower than the previous pressure (pa or pa1) and allow the infiltration of the second material (2) in said piece (1) made of first porous material (8).. .
03/13/14
20140069327
Process for developing a composite coating of diamond like carbon and graphite on silicon carbide grain by indirect arc plasma heating dissociation
The present invention relates to a process for in situ growth of carbonaceous composite coating of diamond like carbon (dlc) and graphite on silicon carbide (sic) grains by carrying out thermal dissociation of sic by an indirect arc plasma heating and the said process comprising the steps of: (i) providing sic grains in a graphite crucible; (ii) passing inert gas in the arc zone situated below the graphite crucible; (iii) passing a inert gas inside the graphite crucible; (iv) heating the graphite crucible by arc plasma for a period in the range of 15 to 30 minutes; (v) continuing the inert gas flow in arc zone and in graphite crucible for 50 to 70 minutes; (vi) cooling the reactor to obtain a carbonaceous composite coating having diamond like carbon (dlc) and graphite on silicon carbide (sic) grains.. .
03/13/14
20140069324
Crucible and method for producing a silicon block
A crucible for producing a silicon block comprises a crucible wall surrounding an interior and an opening for filling silicon melt into the interior, wherein the crucible wall comprises at least one doping means for providing dopant for the silicon melt.. .


Popular terms: [SEARCH]

Crucible topics: Czochralski, Ion Source, Silicon Nitride, Heating Devices, Semiconductor, Semiconductor Material, Growth Chamber, Electrolysis, Electrolyte, Crystal Growth, Silicon Ingot, Accommodation, Crystallin, Silicon Carbide, Molten Silicon

Follow us on Twitter
twitter icon@FreshPatents

###

This listing is a sample listing of patent applications related to Crucible for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Crucible with additional patents listed. Browse our RSS directory or Search for other possible listings.
     SHARE
  
         


FreshNews promo



0.7838

3121

2 - 1 - 71