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This page is updated frequently with new Copper-related patent applications. Subscribe to the Copper RSS feed to automatically get the update: related Copper RSS feeds. RSS updates for this page: Copper RSS RSS


Thin film solar cell

Multilayer ceramic device

Date/App# patent app List of recent Copper-related patents
08/28/14
20140244878
 Methods and systems for address mapping between host and expansion devices within system-in-package (sip) solutions patent thumbnailnew patent Methods and systems for address mapping between host and expansion devices within system-in-package (sip) solutions
Methods and systems are disclosed for address mapping between die-to-die-port (dtdp) host devices and dtdp expansion devices for combined system-in-package (sip) solutions. Interconnect circuitry having a plurality of ports is configured to provide communication from the host device to the expansion device so that the expansion device appears to be resident on the host device.
08/28/14
20140244873
 Methods and systems for interconnecting host and expansion devices within system-in-package (sip) solutions patent thumbnailnew patent Methods and systems for interconnecting host and expansion devices within system-in-package (sip) solutions
Methods and systems are disclosed for interconnecting die-to-die-port (dtdp) host devices and dtdp expansion devices for combined system-in-package (sip) solutions. Interconnect circuitry having a plurality of ports is configured to provide communication from the host device to the expansion device so that the expansion device appears to be resident on the host device.
08/28/14
20140243494
 Method for preparing a diorganodihalosilane patent thumbnailnew patent Method for preparing a diorganodihalosilane
A method of preparing a diorganodihalosilane, the method comprising the following separate and consecutive steps: (a) treating a metal catalyst comprising a metal selected from the groups consisting of i) gold, ii) gold and copper, iii) gold, copper and magnesium, iv) copper, rhodium and gold, v) copper, rhodium, and rhenium, vi) rhenium and palladium, vii) copper, and viii) copper and magnesium with a mixture comprising hydrogen gas and an organotrihalosilane at a temperature from 500 to 1400° c. To form a silicon-containing metal intermediate; and (b) reacting the silicon-containing metal intermediate with an organohalide according to the formula rx, wherein r is c1-c10 hydrocarbyl and x is halo, at a temperature from 100 to 600° c.
08/28/14
20140243301
 Chlorobis copper (i) complex compositions and methods of manufacture and use patent thumbnailnew patent Chlorobis copper (i) complex compositions and methods of manufacture and use
A method of manufacturing an anhydrous copper complex of formula c12h10cicun2o4 and methods of treating neur-muscular and other diseases, including but not limited to fibromyalgia, multiple sclerosis, muscular dystrophy, rheumatoid arthritis, pain, fatigue, sleeplessness, loss of fine motor control, speech loss, inflexibility, alzheimer's, dementia, amyotrophic lateral sclerosis, depression, lyme disease, lyme disease co-infection, gastroparesis (gp), myopathy, chronic inflammation and/or incontinence. The anhydrous copper complex preferably is administered in a pharmaceutical and/or dietary supplement composition of the invention..
08/28/14
20140243248
 Biological method for preventing rancidity, spoilage and instability of hydrocarbon and water emulsions and also increase the lubricity of the same patent thumbnailnew patent Biological method for preventing rancidity, spoilage and instability of hydrocarbon and water emulsions and also increase the lubricity of the same
A method for preventing degradation of physical and chemical properties, and for increasing lubricity, of a hydrocarbon and water emulsion, comprising adding to the emulsion an effective amount of at least one copper salt of a carboxylic acid for enabling at least one bacterium species from pseudomonas genus to become dominant in the emulsion.. .
08/28/14
20140242407
 In-situ compressed specimen for evaluating mechanical property of copper interconnection micro column and preparation method thereof patent thumbnailnew patent In-situ compressed specimen for evaluating mechanical property of copper interconnection micro column and preparation method thereof
An in-situ compressed specimen of copper interconnection micro column, which is a circular metal column formed in a pdms hole, includes: a specimen part and a fixed end part for fixing the specimen; wherein the fixed end part is a circular or square plate structure, the specimen part is an upper part of the fixed end part; a main body of the present invention is of micron order, a forced direction of the specimen is consistent with a growth direction of the metal column. A method of electroplating copper column by adopting pdms as template substrate is applied to overcome a problem that tsv is corrosive to the copper column during a silicon etching process so as to affect a mechanical property accuracy test, the method is advanced in shortening test process period, achieving good reproducibility and high yield..
08/28/14
20140242404
 Additives for use in wood preservation patent thumbnailnew patent Additives for use in wood preservation
The present invention relates to a wood preservative formulation comprising a biocidal agent which is a copper or zinc ion complexed with an amino compound selected from the group consisting of ammonia, a water soluble amine or alkanolamine and an aminocarboxylic acid and a stabilizer, as well as to aqueous treatment solutions comprising such a formulation and methods of treating wood or other cellulosic material utilising said formulation.. .
08/28/14
20140242361
 Roof-greening sheet patent thumbnailnew patent Roof-greening sheet
Disclosed therein is a sheet for green roof that includes a copper or aluminum thin film or a nonwoven fabric having a predetermined thickness firmly laminated on both sides of a glass fabric having a predetermined area through an adhesive to prevent the root growth of plants and maximizes insulation from moisture, thermal insulation, and reduction of thermal conductivity, thereby extending the lifetimes of the sheet, the waterproof layer and the building structure.. .
08/28/14
20140242265
 Electroless palladium plating bath composition patent thumbnailnew patent Electroless palladium plating bath composition
The present invention concerns an aqueous plating bath composition for electroless deposition of palladium and/or palladium alloys and a method which utilises such aqueous plating bath compositions. The aqueous plating bath comprises a source of palladium ions, a reducing agent, a nitrogenated complexing agent which is free of phosphorous and at least one organic stabilising agent comprising 1 to 5 phosphonate residues.
08/28/14
20140242264
 Formaldehyde-free electroless copper plating solution patent thumbnailnew patent Formaldehyde-free electroless copper plating solution
The invention relates to an electroless aqueous copper plating solution, comprising a source of copper ions, a source of glyoxylic acid as reducing agent, and at least one polyamino disuccinic acid or at least one polyamino monosuccinic acid, or a mixture of at least one polyamino disuccinic acid and at least one polyamino monosuccinic acid as complexing agent, as well as to a method for electroless copper plating utilizing said solution and the use of the solution for the plating of substrates.. .
08/28/14
20140241970
new patent Process and apparatus for improving the operation of wet scrubbers
The description relates to improving the operation of wet scrubbers, especially those based on calcium carbonate, by reducing the quantities of soluble chlorides in the combustion gases fed to the scrubbers. By converting gaseous hcl in the combustion gases to a solid copper chloride and removing it before the chloride reaches the scrubber, the reactivity of the scrubbing slurry will be better maintained.
08/28/14
20140241771
new patent Base for fixing belt, fixing belt, fixing device, and image forming apparatus
A base for a fixing belt comprising at least: a nickel layer; and a copper layer, both laminated each other, wherein an orientation ratio i(200)/i(111) calculated based on a ratio between a peak strength of (200) crystal face and a peak strength of (111) crystal face by x-ray diffraction analysis of the copper layer is 0.1 or less. The base for the fixing belt further includes a protective layer, disposed on a surface of the copper layer opposite a surface on which the nickel layer is laminated, and the protective layer is formed of nickel..
08/28/14
20140240899
new patent Multilayer ceramic device
Disclosed herein is a multilayer ceramic device, including a device body; an inner electrode arranged in the device body; and an external electrode arranged at outside of the device body and being electrically connected to the inner electrode; wherein the external electrode includes: an inner layer covering the device body; an outer layer covering the inner layer and being exposed to the outside; and an intermediate layer arranged between the inner layer and the outer layer, and made of a mixture of a copper metal and a resin, a surface of the copper metal being coated with an oxide film.. .
08/28/14
20140240643
new patent Thermal design for high output led backlights
The present disclosure includes a led illuminator that improves heat conduction through a lcd module's rear cover. The disclosed led illuminator integrates a heat dissipation device for reducing thermal spikes on the lcd glass and in the led packages by dissipating heat generated within the lcd module.
08/28/14
20140239735
new patent Contactless power transfer system for movable object
In an example of a system, power is transferred from a transmission coil to a reception coil by electromagnetic induction. A detecting unit calculates a difference between a standard value and a measured value, detects presence of a metallic foreign object on the transmission coil based on the difference, and outputs a signal when the metallic foreign object is detected.
08/28/14
20140239501
new patent Integrated circuit interconnects and methods of making same
A dielectric layer is formed on a substrate and patterned to form an opening. The opening is filled and the dielectric layer is covered with a metal layer.
08/28/14
20140239439
new patent Electrical fuses and methods of making electrical fuses
A fuse, a method of making the fuse and a circuit containing the fuse. The fuse includes an electrically conductive and conformal liner on sidewalls and the bottom of a trench; a copper layer on the conformal liner, a first thickness of the copper layer over the bottom of the trench in a lower portion of the trench greater than a second thickness of the copper layer over the sidewalls of the trench in an abutting upper portion of the trench; and a dielectric material on the copper layer in the trench, the dielectric material filling remaining space in the upper portion of said trench..
08/28/14
20140238953
new patent Etching agent for copper or copper alloy
The etching solution to be used in a step of selectively etching copper or copper alloy in an electronic substrate having both of copper or copper alloy and nickel has, as essential components thereof, (a) a linear alkanolamine, (b) a chelating agent having an acid group in the molecule thereof, and (c) hydrogen peroxide.. .
08/28/14
20140238873
new patent Modified bubbling transfer method for graphene delamination
In the bb transfer, or so called electrochemical delamination process, a transfer film is firstly spray-coated on a stack formed by two graphene sandwiching a metal (cu or cr) foil as a protection layer. Then, direct current (dc) voltage is applied to the first stack as a cathode and an anode (from be a platinum wire, a carbon rod, or others) in an electrolyte aqueous solution.
08/28/14
20140238868
new patent Electroplating bath
Compositions suitable for the electrodeposition of copper on substrates, such as electronic device substrates, are provided. Methods of depositing copper layers on surfaces and filling apertures with copper are also provided..
08/28/14
20140238847
new patent Light absorbing layer for photoelectrode structure, photoelectrode structure including the same, and photoelectrochemical cell including the photoelectrode structure
A light absorbing layer for a photoelectrode structure, the light absorbing layer including copper oxide, wherein metallic copper (cu) is present at a grain boundary of the copper oxide. Also, a photoelectrode structure including the light absorbing layer, a photoelectrochemical cell including the photoelectrode structure, and a solar cell including the light absorbing layer..
08/28/14
20140238479
new patent Thin film solar cell
Provided is a thin film solar cell including a rear electrode formed on a substrate, a light absorbing layer formed on the rear electrode, a buffer layer formed on the light absorbing layer, and a front transparent electrode formed on the buffer layer. The buffer layer includes copper oxide..
08/21/14
20140235890
Copper-zirconia catalyst and method of use and manufacture
Catalysts and methods for their manufacture and use for the dehydrogenation of alcohols are disclosed. The catalysts and methods utilize a highly dispersible alumina, for example, boehmite or pseudoboehmite, to form catalysts that exhibit high dehydrogenation activities.
08/21/14
20140235866
Process to obtain a trifluoromethylating composition
Process to obtain a trifluoromethylating composition which comprises the reaction between a copper (i) source and a base in the presence of a solvent and between the resulting cuprating reagent with fluoroform.. .
08/21/14
20140235771
Poly(3-hydroxyalkanoate) resin composition
(where r1 and r2 are each independently a hydrogen atom, a c1-10 alkyl group, or a c2-11 alkoxycarbonyl group), wherein the metal salt is at least one selected from the group consisting of a lithium salt, a sodium salt, a potassium salt, a magnesium salt, a calcium salt, a barium salt, a manganese salt, an iron salt, a cobalt salt, a nickel salt, a copper salt, a silver salt, an aluminum salt, and a tin salt.. .
08/21/14
20140235006
Copper(i) complexes for optoelectronic devices
# indicates the atom which mediates the bond with the second chemical unit.. .
08/21/14
20140234548
Cermet powder
A cermet powder includes a) from 50 to 90 wt-% of at least one hard material, and b) from 10 to 50 wt-% of a matrix metal composition. The wt.-% for a) and b) are based on a total weight of the cermet powder.
08/21/14
20140234206
Process for the direct synthesis of cu containing zeolites having cha structure
A process for the preparation of a copper containing zeolitic material having cha framework structure and a composition comprising the molar ratio (n yo2):x2o3 wherein x is a trivalent element, preferably al, y is a tetravalent element, preferably si, and wherein n is preferably at least 20, the process comprising the preparation of an phosphor-free aqueous solution containing at least one source for x2o3 and at least one source for yo2, at least one structure directing agent suitable for the preparation of a zeolitic material having cha framework structure, and at least one cu source, and the process further comprising the hydrothermal crystallization of said aqueous solution obtaining a suspension containing the copper containing zeolitic material having cha framework structure.. .
08/21/14
20140234156
Brass with excellent corrosion resistance
Disclosed is a brass that possesses high corrosion resistance even without undergoing a heat treatment step contemplated for dezincification corrosion suppression. This brass includes 55% by mass to 75% by mass of cu (copper), 0.01% by mass to 1.5% by mass of si (silicon), sn (tin) and al (aluminum) in such amounts as to satisfy a prescribed relationship with an apparent zn content, less than 0.25% by mass of mn (manganese) as an optional ingredient, less than 0.05% by mass of ti (titanium) as an optional ingredient, less than 0.3% by mass of mg (magnesium) as an optional ingredient, less than 0.15% by mass of p (phosphorus) as an optional ingredient, and less than 0.004% by mass of a rare earth metal as an optional ingredient with the balance consisting of zn (zinc) and unavoidable impurities, the apparent zinc content being 37 to 45..
08/21/14
20140234153
Cost reduced steel for hydrogen technology with high resistance to hydrogen-induced embrittlement
A corrosion-resistant, hot and cold formable and weldable steel for use in hydrogen-induced technology with high resistance to hydrogen embrittlement has the following composition: 0.01 to 0.4 percent by mass of carbon, ≦3.0 percent by mass of silicon, 0.3 to 30 percent by mass of manganese, 10.5 to 30 percent by mass of chromium, 4 to 12.5 percent by mass of nickel, ≦1.0 percent by mass of molybdenum, ≦0.2 percent by mass of nitrogen, 0.5 to 8.0 percent by mass of aluminum, ≦4.0 percent by mass of copper, ≦0.1 percent by mass of boron, ≦1.0 percent by mass of tungsten, ≦5.0 percent by mass of cobalt, ≦0.5 percent by mass of tantalum, ≦2.0 percent by mass of at least one of the elements: niobium, titanium, vanadium, hafnium and zirconium, ≦0.3 percent by mass of at least one of the elements: yttrium, scandium, lanthanum, cerium and neodymium, the remainder being iron and smelting-related steel companion elements.. .
08/21/14
20140234152
Sintered bearing and method for manufacturing same
Provided is a sintered bearing that is capable of reducing cost through reduction in usage amount of copper, excellent in initial running-in characteristics and quietness, and is high in durability. Raw material powders including iron powder, flat copper powder, low-melting point metal powder, and graphite are loaded into a mold, and a green compact is formed under a state in which the flat copper powder is caused to adhere onto a molding surface.
08/21/14
20140233673
Apparatus and method for communicating data over a communication channel
For some applications such as high-speed communication over short-reach links, the complexity and associated high latency provided by existing modulators may be unsuitable. According to an aspect, the present disclosure provides a modulator that can reduce latency for applications such as 400/1000 communication over copper cables or smf.
08/21/14
20140233147
Multilayer ceramic electronic component
There is provided a multilayer ceramic electronic component, including a ceramic body including dielectric layers; a plurality of internal electrodes stacked within the ceramic body, and external electrodes formed on external surfaces of the ceramic body and electrically connected to the internal electrodes, wherein the external electrodes include a metal layer and a conductive resin layer formed on the metal layer, the conducive resin layer containing a copper powder and an epoxy resin, the copper powder including a first copper powder having a content of 10 wt % or more and a particle diameter of 2 μm or greater and a second copper powder having a content of 5 wt % or more and a particle diameter of 0.7 μm or smaller, the first copper powder being a mixture of spherical powder particles and flake type powder particles.. .
08/21/14
20140232254
Electrode core material for spark plugs
An electrode core material that may be used in electrodes of spark plugs and other ignition devices to provide increased thermal conductivity to the electrodes. The electrode core material is a precipitate-strengthened copper alloy and includes precipitates dispersed within a copper (cu) matrix such that the electrode core material has a multi-phase microstructure.
08/21/14
20140232003
Semiconductor constructions, semiconductor processing methods, methods of forming contact pads, and methods of forming electrical connections between metal-containing layers
Some embodiments include semiconductor processing methods in which a copper barrier is formed to be laterally offset from a copper component, and in which nickel is formed to extend across both the barrier and the component. The barrier may extend around an entire lateral periphery of the component, and may be spaced from the component by an intervening ring of electrically insulative material.
08/21/14
20140231999
Schemes for forming barrier layers for copper in interconnect structures
A method of forming a semiconductor structure includes providing a substrate; forming a low-k dielectric layer over the substrate; embedding a conductive wiring into the low-k dielectric layer; and thermal soaking the conductive wiring in a carbon-containing silane-based chemical to form a barrier layer on the conductive wiring. A lining barrier layer is formed in the opening for embedding the conductive wiring.
08/21/14
20140231994
Apparatus for lead free solder interconnections for integrated circuits
An apparatus includes an integrated circuit having at least one input/output terminal comprising copper formed thereon. A metal cap layer overlies an upper surface of the at least one input/output terminal.
08/21/14
20140231930
Atomic layer deposition of hafnium or zirconium alloy films
Provided are methods of depositing hafnium or zirconium containing metal alloy films. Certain methods comprise sequentially exposing a substrate surface to alternating flows of an organometallic precursor and a reductant comprising m(bh4)4 to produce a metal alloy film on the substrate surface, wherein m is selected from hafnium and zirconium, and the organometallic precursor contains a metal n.
08/21/14
20140231726
Method for suppressing copper sulfide generation in oil-filled electrical equipment
The present invention is a method for preventing copper sulfide generation in oil-filled electrical equipment having an inhibitor of copper sulfide generation in insulating oil, and the method is characterized in monitoring characteristics of said insulating oil and performing re-addition of said inhibitor at an appropriate moment in accordance with a result of said monitoring.. .
08/21/14
20140231269
Equipment and method for electrolytic recovery of metal
The invention concerns a system of gas ducts (6) for transporting gas, for example, into electrolytic equipment, in connection with which there are means (13) for taking at least gas into the system of gas ducts, whereby there is a suitable number of gas supply holes (7) in the system of gas ducts in a wall (19) limiting the system of gas ducts, whereby the material, such as gas, flowing in the system of gas ducts (6) is prevented at least in part from passing through the wall (19) of the system of gas ducts (6). The invention also concerns equipment and a method for electrolytic recovery of metal, such as copper..
08/21/14
20140231148
Composite materials including inorganic fullerene-like particles and inorganic tubular-like particles in a polymer matrix
A composite including a dispersed phase of an inorganic material of a metal chalcogenide composition with a fullerene-like or tubular-like geometry that is present in a polymeric matrix, wherein the inorganic material of the metal chalcogenide has a molecular formula mx2, where m is a metallic element selected from the group consisting of titanium (ti), vanadium (v), chromium (cr), manganese (mn), iron (fe), cobalt (co), nickel (ni), copper (cu), zinc (zn), zirconium (zr), niobium (nb), molybdenum (mo), technetium (tc), ruthenium (ru), rhodium (rh), palladium (pd), silver (ag), cadmium (cd), hafnium (hf), tantalum (ta), tungsten (w), rhenium (re), osmium (os), iridium (ir), platinum (pt), gold (au), mercury (hg) and combinations thereof, and x is a chalcogen element selected from the group consisting of sulfur (5), selenium (se), tellurium (te), oxygen (o) and combinations thereof.. .
08/21/14
20140231007
Ultrathin laminates
Ultrathin copper clad laminates including a fabric sheet material layer having a first planar surface, a second planar surface and an original thickness of from about 10 to about 30 microns and at least one copper foil sheet that is adhered to a planar surface of the fabric sheet material by a cured resin wherein the base laminate has a thickness of from about 1.0 to about 1.75 mils.. .
08/21/14
20140230510
Methods of maintaining and using a high concentration of dissolved copper on the surface of a useful article
A method for maintaining and using a high concentration of dissolved copper on a surface of a useful article by providing a copper surface without coatings thereon, which increase the wetting angle and which isolate the copper surface and which has a surface roughness between 2 and 50 micro inches ra, so as to kill microbes thereon.. .
08/21/14
20140230207
Lift off process for conductor foil layer
A flex-circuit or a rigid printed circuit board is formed by depositing an adhesive pattern on a top surface of a substrate. The adhesive pattern corresponds to a copper foil pattern to be formed for interconnecting electronic components.
08/14/14
20140228512
Polyimides, coating composition formed therefrom and use thereof
A polyimide (pi) having two —cooh capping groups at each end is provided. A coating composition is further provided, which contains the pi and a hardening agent having 2 to 6 functional groups capable of reacting with —cooh.
08/14/14
20140227870
Method of forming a through-silicon via utilizing a metal contact pad in a back-end-of-line wiring level to fill the through-silicon via
A method for fabricating through-silicon vias (tsvs) for semiconductor devices is provided. Specifically, the method involves utilizing copper contact pads in a back-end-of-line wiring level, wherein the copper contact pads act as cathodes for performing an electroplating technique to fill tsvs with plated-conductive material (e.g., copper) from an electroplating solution.
08/14/14
20140227831
Front side copper post joint structure for temporary bond in tsv application
A method of forming an integrated circuit structure is provided. The method includes providing a substrate, the substrate having a conductive pad thereon.
08/14/14
20140227533
Laminate body and method for producing laminate body
The present invention aims to provide a laminate in which a metal and a fluoropolymer are directly and firmly attached to each other. The present invention relates to a laminate including a layer (a) including a metal, and a layer (b) formed on the layer (a), wherein the layer (b) includes a copolymer containing a polymer unit based on tetrafluoroethylene and a polymer unit based on a perfluoro(alkyl vinyl ether), the copolymer contains a carboxyl group at a terminus of a main chain and has a melt flow rate of not lower than 20 g/10 min and a melting point of not higher than 295° c., and the metal is at least one selected from the group consisting of copper, stainless steel, aluminum, iron, and an alloy thereof..
08/14/14
20140227334
Self adhesive copper or copper alloy push plate
An antimicrobial self-adhesive push plate is disclosed. The push plate includes a copper or copper ahoy.
08/14/14
20140227129
Copper alloy sheet, and method of producing copper alloy sheet
Provided is one aspect of copper alloy sheet containing 4.5% by mass to 12.0% by mass of zn, 0.40% by mass to 0.90% by mass of sn, 0.01% by mass to 0.08% by mass of p, as well as 0.005% by mass to 0.08% by mass of co and/or 0.03% by mass to 0.85% by mass of ni, the remainder being cu and unavoidable impurities. The copper alloy sheet satisfies a relationship of 11≦[zn]+7×[sn]+15×[p]+12×[co]+4.5×[ni]≦17.
08/14/14
20140227128
Copper alloy with high strength and high electrical conductivity
This copper alloy with high strength and high electrical conductivity includes: mg: more than 1.0% by mass to less than 4% by mass; and sn: more than 0.1% by mass to less than 5% by mass, with a remainder including cu and inevitable impurities, wherein a mass ratio mg/sn of a content of mg to a content of sn is in a range of 0.4 or more. This copper alloy with high strength and high electrical conductivity may further include ni: more than 0.1% by mass to less than 7% by mass..
08/14/14
20140226296
Multi-layer wiring board and method for producing multi-layer wiring board
This multi-layer wiring board is provided with an insulating substrate, an inner layer copper sheet, and an outer layer copper foil. The inner layer copper sheet is disposed within the insulating substrate and has been patterned.
08/14/14
20140225263
Semiconductor device and method for manufacturing semiconductor device
During the production of a semiconductor device having a cu wiring line of a damascene structure, diffusion of fluorine from a cf film that serves as an interlayer insulating film is prevented in cases where a heat treatment is carried out, thereby suppressing increase in the leakage current. A semiconductor device of the present invention having a damascene wiring structure is provided with: an interlayer insulating film (2) that is formed of, for example, a fluorine-added carbon film; and a copper wiring line (4) that is embedded in the interlayer insulating film.
08/14/14
20140225255
Copper pillar full metal via electrical circuit structure
An electrical interconnect including a first circuitry layer with a first surface and a second surface. A first liquid dielectric layer is imaged directly on the first surface of the first circuitry layer to form a first dielectric layer with a plurality of first recesses.
08/14/14
20140225130
Light-emitting device
A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) (107) is provided facing a substrate (first substrate) (101) that has a luminous element (102) formed thereon.
08/14/14
20140225119
Liquid crystal display device
In a liquid crystal display (lcd) device having a thin film transistor (tft), the tft includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer.
08/14/14
20140225091
Organic optoelectronic devices incorporating plasmonic electrodes
An organic optoelectronic device that includes a substrate and a plurality of structures disposed thereon, the structures include: (a) a first electrode; vertically separated from (b) a second electrode by (c) an electrode gap that includes an organic photoactive layer disposed within the gap, wherein one of the electrodes includes a plurality of plasmonic nanopores or metal nanostructures, wherein the nanostructures project towards the electrode gap and the metal is selected from gold, aluminum, silver, calcium, copper, and nickel is presented.. .
08/14/14
20140224522
Insulated electric wire and method of manufacturing the same
There is provided an insulated wire, including: a copper conductor containing copper and having an oxide layer on its surface, with a thickness of 5 nm or more and 300 nm or less; and an insulation coating formed on a surface of the oxide layer and made of a resin composition including engineering plastic having a melting point or a softening point of 220° c. Or more..
08/14/14
20140224519
Antimicrobial self-adhesive light switch rocker cover
An antimicrobial self-adhesive switch rocker cover is disclosed. The rocker cover includes a distal end and a base end wherein the switch cover comprises a copper or copper alloy.
08/14/14
20140224387
Method of annealing copper wire for interconnector
A method of annealing a copper wire for an interconnector includes heating a copper wire by a direct resistance heating or by an induction heating, a heating temperature of the heating being in a range of 650° c. To 1020° c., and a heating time of the heating being in a range of 0.3 seconds to 5 seconds..
08/14/14
20140224386
Al-zn-mg-cu alloy with improved damage tolerance-strength combination properties
An al—zn—mg—cu alloy with improved damage tolerance-strength combination properties. The present invention relates to an aluminium alloy product comprising or consisting essentially of, in weight %, about 6.5 to 9.5 zinc (zn), about 1.2 to 2.2% magnesium (mg), about 1.0 to 1.9% copper (cu), preferable (0.9 mg−0.6)≦cu≦(0.9 mg+0.05), about 0 to 0.5% zirconium (zr), about 0 to 0.7% scandium (sc), about 0 to 0.4% chromium (cr), about 0 to 0.3% hafnium (hf), about 0 to 0.4% titanium (ti), about 0 to 0.8% manganese (mn), the balance being aluminium (al) and other incidental elements.


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Copper topics: Molybdenum, Nitrous Oxide, Carbon Dioxide, Semiconductor, Conductive Layer, Copper Alloy, Sulfuric Acid, Sodium Hydroxide, Essential Oil, Mineral Oil, Carbon Monoxide, Electronic Device, Epoxy Resin, Copper Clad Laminate, Benzoxazine

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