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Bonded system with coated copper conductor
Copper foil for producing graphene and method of producing graphene using the same
Copper electroplating solution and copper electroplating apparatus
|| List of recent Copper-related patents
| Mirroring high performance and high availablity applications across server computers|
Systems and methods to minor data and otherwise manage memory are provided. A buffer may be coupled to a processor and be configured to write a first copy of data to a first memory located at a first server computer and a second copy of the data to a second memory that is accessible to both the first server computer and a second server computer.
| Chemical mechanical polishing process and slurry containing silicon nanoparticles|
In one aspect, a substrate chemical mechanical polishing (cmp) method for substrates is disclosed. The cmp method includes providing a substrate having a surface of silicon and copper such as through silicon via regions containing copper, and polishing the surface with a slurry containing very small silicon nanoparticles (e.g., having an average diameter less than 8 nanometers).
| Titanium oxynitride hard mask for lithographic patterning|
A vertical stack including a dielectric hard mask layer and a titanium nitride layer is formed over an interconnect-level dielectric material layer such as an organosilicate glass layer. The titanium nitride layer may be partially or fully converted into a titanium oxynitride layer, which is subsequently patterned with a first pattern.
| Bump structural designs to minimize package defects|
A method of forming a chip package includes providing a chip with a plurality of first copper post bumps having a first height of copper post. The method also includes providing a substrate with a plurality of second copper post bumps having a second height of copper post.
| Electrolytic copper foil, method of producing electrolytic copper foil, lithium ion secondary cell using electrolytic copper foil as collector|
The present invention provides an electrodeposited copper foil having a tensile strength of at least 300 mpa and elongation rate of at least 3.0% after heat treatment at 350° c. For 1 hour and provides a copper foil which prevents the breakage of a current collector (copper foil) while maintaining adhesiveness between the current collector (copper foil) and the active material in response to substantial expansion and contraction of a si or sn alloy-based active material.
| Flexible bismaleimide, benzoxazine, epoxy-anhydride adduct hybrid adhesive|
A resin composition which has low stress, and good adhesive property in high temperature and high moisture environments and which is useful in adhesive applications in low stress, high moisture sensitivity level electronic packages. Preferably, a flexible epoxy anhydride adduct modified solid bismaleimide and solid benzoxazine resin composition that can survive high temperature and high moisture conditions and maintain good adhesion strength and minimize the stress resulting from a coefficient of thermal expansion mismatch between a silicon die and a substrate which is ball grid array solder mask or a smart card polyethylene terephthalate or silver or copper metal lead frame..
| Methods for reducing metal oxide surfaces to modified metal surfaces|
Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. Metal oxide surfaces are reduced to form a film integrated with a metal seed layer by contacting a solution with a reducing agent with the metal oxide surfaces.
| Cuprous oxide powder and method for producing same|
There are provided a cuprous oxide powder having a smaller particle diameter than that of conventional cuprous oxide powders, and a method for producing the cuprous oxide powder by a chemical reducing process. In a method for producing a cuprous oxide powder by adding a reducing agent, such as a reducing sugar, to a solution containing copper hydroxide, which is formed by adding one of an alkali solution and a copper ion containing solution to the other thereof, to deposit cuprous oxide particles by reduction, 0.00001 to 0.04 moles (10 to 40000 ppm) of ferrous ions with respect to the amount of copper ions in the copper ion containing solution are added to the copper ion containing solution before forming copper hydroxide, to produce a cuprous oxide powder which has a mean primary particle diameter of not greater than 0.5 micrometers when it is measured by a scanning electron microscope (sem), the cuprous oxide powder having a 50% particle diameter (d50 diameter) of not greater than 0.8 micrometers when it is calculated by a laser diffraction type particle size distribution measurement, the cuprous oxide powder containing 0.30 ppm or more of iron..
| Nickel-based alloy and turbine component having nickel-based alloy|
A nickel-based alloy and a turbine component are disclosed. The alloy includes, by weight, between about 0.8% and about 1.3% hafnium, between about 5.7% and about 6.4% aluminum, between about 7.0% and about 10.0% cobalt, up to about 0.1% carbon, up to about 8.7% chromium, up to about 0.6% molybdenum, up to about 9.7% tungsten, up to about 0.9% titanium, up to about 0.02% boron, up to about 0.1% manganese, up to about 0.06% silicon, up to about 0.01% phosphorus, up to about 0.004% sulfur, up to about 0.02% zirconium, up to about 1.8% niobium, up to about 0.1% vanadium, up to about 0.1% copper, up to about 0.2% iron, up to about 0.003% magnesium, up to about 0.002% oxygen, up to about 0.002% nitrogen, and a balance nickel.
| Telecommunications cable inlet device|
The present invention relates to an inlet device for inserting a plurality of cables containing optical fibers, copper wires or coax cable into port of a telecommunications enclosure. In particular, the exemplary inlet device includes a breakout portion that can be connected to a conduit carrying at least one of the cables to enter the enclosure.
| Bonded system with coated copper conductor|
A semiconductor component includes a semiconductor die and a copper-containing electrical conductor. The semiconductor die has a semiconductor device region, an aluminum-containing metal layer on the semiconductor device region, and at least one additional metal layer on the aluminum-containing metal layer which is harder than the aluminum-containing metal layer.
| Copper etching integration scheme|
The present disclosure is directed to an interconnect structure. The metal interconnect structure has a metal body disposed over a semiconductor substrate and a projection extending from the metal body.
| Positive electrode active material for sodium battery, and method of producing the same|
(wherein m is at least one selected from the group consisting of titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper and zinc; a is at least one selected from the group consisting of aluminum, silicon, phosphorus, sulfur, titanium, vanadium and tungsten; x satisfies the condition 4≧x≧2; y satisfies the condition 4≧y≧1, z satisfies the condition 4≧z≧0; w satisfies the condition 1≧w≧0; and one or both of z and w is 1 or more).. .
| Structure and method of bonding copper and aluminum|
A bonded structure of aluminum and copper is formed by bonding a copper workpiece and an aluminum workpiece together along a joint via an arc welding process. The copper workpiece has a first coating, having a lower melting point than copper, applied to at least a portion of it.
| Copper electroplating solution and copper electroplating apparatus|
An electroplating solution includes an aqueous electrolyte solution including water soluble copper salts, sulfide ions and chloride ions, an accelerator including an organic material having sulfur (s), the accelerator accelerating copper (cu) reduction, a suppressor including a polyether compound, the suppressor selectively suppressing the copper reduction, and a leveler including a water soluble polymer having nitrogen that is dissolved into positive ions in the aqueous electrolyte solution.. .
| Treatment method of electrodeposited copper for wafer-level-packaging process flow|
A method of treating a copper containing structure on a substrate is disclosed. The method includes electrodepositing the copper containing structure on a substrate, annealing the copper containing structure, and forming an interface between a pad of the copper containing structure and a solder structure after anneal.
| Electroplating aid board and electroplating device using same|
An electroplating device includes a plating solution, at least one anode basket located in the plating solution, and a workpiece to be plated. An electroplating aid board is arranged between the anode basket and the workpiece to be plated.
A glazing is provided comprising at least one ply of glass having an electrically conductive component connected to an electrical connector by a soldered joint. The solder has a composition comprising tin and silver, preferably 98sn2ag.
| Copper foil for producing graphene and method of producing graphene using the same|
A copper foil for producing graphene, including oxides and sulfides each having a diameter of 0.5 μm or more having a total number of 15/mm2 or less measured by using a scanning electronic microscope before heating at 1000° c. For 1 hour..
| Synthesis method of cu(in,ga)se2 nanorod or nanowire and materials including the same|
A method of fabricating cigs nanorod or nanowire according to one exemplary embodiment of the present disclosure comprises a deposition preparation step of placing a raw material including copper, indium, gallium and selenium and a substrate, and a deposition step of growing cigs nanorod or nanowire on the substrate by maintaining an internal temperature of a reactor, in which carrier gas flows at a constant flow rate, at a temperature in the range of 850 to 1000° c. According to the method, cu(in,ga)se2 nanorod or nanowire as a direct transition type semiconductor material having substantially uniform composition, high crystallinity and high light absorption ratio can be fabricated..
|Metal-organic framework with optimized open metal sites and pore spaces for high methane storage at room temperature|
A 3d porous metal-organic framework and method of making are described. In some embodiments, a 3d porous metal-organic framework may be based on a trinodal (3,3,4) net of zyg topology by the self-assembly of the nonlinear hexacarboxylate (bhb) with the paddle-wheel cu2(coo)4 cluster.
|Cathode active material, cathode and lithium battery including cathode active material, and method of preparing the cathode active material|
Me includes at least one metal selected from nickel (ni), cobalt (co), manganese (mn), iron (fe), chromium (cr), titanium (ti), copper (cu), aluminum (al), magnesium (mg), zirconium (zr), and boron (b).. .
|Electrolytic copper foil and method for producing the same|
An electrolytic copper foil is provided. The electrolytic copper foil has a shiny side and a matte side opposing to the shiny side, wherein the difference in roughness between the shiny side and the matte side is 0.5 μm or less.
|Copper alloy sheet with excellent heat dissipation and workability in repetitive bending|
Provided is a copper alloy plate that is for an fpc substrate and that has superior heat dissipation, repeated bending workability, shape retaining properties, and heat resistance. The copper alloy plate contains at least 0.01 mass % of the total of at least one element selected from the group consisting of ag, cr, fe, in, ni, p, si, sn, ti, zn, and zr, contains no more than 1.0 mass % of ag, no more than 0.08 mass % of ti, no more than 2.0 mass % of ni, no more than 3.5 mass % of zn, and no more than 0.5 mass % of cr, fe, in, p, si, sn, and zr by the total of the at least one element selected from the group, the remainder comprising cu and impurities, has a conductivity of at least 60% iacs, has a tensile strength of at least 350 mpa, and has i(311)/io(311) determined by x-ray diffraction in the thickness direction of the plate surface that satisfies the formula i(311)/io(311)≧0.5..
Disclosed is a copper alloy containing 1.0% to 3.6% of ni, 0.2% to 1.0% of si, 0.05% to 3.0% of sn, 0.05% to 3.0% of zn, with the remainder including copper and inevitable impurities. The copper alloy has an average grain size of 25 pm or less and has a texture having an average area percentage of cube orientation of 20% to 60% and an average total area percentage of brass orientation, s orientation and copper orientation of 20% to 50%.
|Copper alloy sheet and method of manufacturing copper alloy sheet|
A copper alloy sheet according to one aspect contains 28.0 mass % to 35.0 mass % of zn, 0.15 mass % to 0.75 mass % of sn, 0.005 mass % to 0.05 mass % of p, and a balance consisting of cu and unavoidable impurities, in which relationships of 44≧[zn]+20×[sn]≧37 and 32≦[zn]+9×([sn]−0.25)1/2≦37 are satisfied. The copper alloy sheet according to the aspect is manufactured by a manufacturing process including a finish cold-rolling process of cold-rolling a copper alloy material, an average grain size of the copper alloy material is 2.0 μm to 7.0 μm, and a sum of an area ratio of a β phase and an area ratio of a γ phase in a metallographic structure of the copper alloy material is 0% to 0.9%..
|Cable assembly with electrical-optical hybrid cable|
A cable assembly comprises: an insulative housing; a plurality of contacts received into the insulative housing; a printed circuit board located behind the insulative housing and electrically connected with the plurality of contacts; a metallic shell enclosing the insulative housing and the printed circuit board; an insulative shell enclosing a rear portion of the metallic shell; and a cable having a plurality of optical fibers coupled to a top surface of the printed circuit board and a plurality of copper wires electrically connected to a bottom surface of the printed circuit board.. .
|Power module substrate, power module substrate with heat sink, power module, and method of manufacturing power module substrate|
A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate.
|High efficiency permanent magnet machine|
The present invention is a high efficiency permanent magnet machine capable of maintaining high power density. The machine is operable over a wide range of power output.
|Copper-tipped slats for laser cutting|
Improved slats for cutting tables are provided by forming from steel elongate receiver plates having a plurality of receiver slats and forming from copper a plurality of insert members. The insert members each have an interlocking section and a tip section.
|Barrier layer for copper interconnect|
A device including a dielectric layer overlying a substrate, a conductive line with a sidewall in the dielectric layer, a ta layer adjoining the sidewall of the conductive line, and a metal oxide formed between the ta layer and the dielectric layer.. .
|Airgap interconnect with hood layer and method of formiing|
An airgap interconnect structure with hood layer and methods for forming such an airgap interconnect structure are disclosed. A substrate having a dielectric layer with a plurality of interconnects formed therein is provided.
|Wiring material and semiconductor module using the same|
There is provided a wiring material including a core layer made of metal and a clad layer made of metal and a fiber in which the core layer is copper or an alloy containing copper and the clad layer is formed of copper or the alloy containing copper and the fiber having a thermal expansion coefficient lower than that of copper, the wiring material having a stacked structure in which at least one surface of the core layer is closely adhered to the clad layer, and the fiber in the clad layer is arranged so as to be parallel to the surface of the core layer.. .
|Method of fabricating land grid array semiconductor package|
A fan-out wafer level package is provided with a semiconductor die embedded in a reconstituted wafer. A redistribution layer is positioned over the semiconductor die, and includes a land grid array on a face of the package.
|Methods and systems for point of use removal of sacrificial material|
A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemfets), depositing a dielectric layer over the chemfets in the array, depositing a protective layer over the dielectric layer, etching the dielectric layer and the protective layer to form cavities corresponding to sensing surfaces of the chemfets, and removing the protective layer. The method further includes, etching the dielectric layer and the protective layer together to form cavities corresponding to sensing surfaces of the chemfets.
|Nuclear fusion reactor first wall component and production process thereof|
A nuclear fusion reactor first wall component includes a copper alloy element, an intermediate metal layer made from niobium and a beryllium element, directly in contact with the intermediate metal layer. The intermediate niobium layer is further advantageously associated with a mechanical stress-reducing layer formed by a metal chosen from copper and nickel.
|Copper alloy and method of manufacturing copper alloy|
Disclosed is a beryllium-free copper alloy having high strength, high electric conductivity and good bending workability and a method of manufacturing the copper alloy. Provided is a copper alloy having a composition represented by the composition formula by atom %: cu100-a-b-c(zr, hf)a(cr, ni, mn, ta)b(ti, al)c [wherein 2.5≦a≦4.0, 0.1<b≦1.5 and 0≦c≦0.2; (zr, hf) means one or both of zr and hf; (cr, ni, mn, ta) means one or more of cr, ni, mn and ta; and (ti, al) means one or both of ti and al], and having cu primary phases in which the mean secondary dendrite arm spacing is 2 μm or less and eutectic matrices in which the lamellar spacing between a metastable cu5(zr, hf) compound phase and a cu phase is 0.2 μm or less..
|Apparatus and method for edge bevel removal of copper from silicon wafers|
Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer.
|Field coil winding assembly|
A method for preparing a field coil winding assembly including cleaning a plurality of copper coils followed by developing, after the cleaning, a copper oxide layer on each of the copper coils by oxidizing each of the copper coils in a solution. After the developing, each of the copper coils is rinsed followed by drying.
|Prepreg, method for manufacturing the same, and copper clad laminate using the same|
Disclosed herein are a prepreg, including: an inorganic fiber, an organic fiber, or a hybrid fiber obtained by mix-weaving the inorganic fiber and the organic fiber, coated with a thermally conductive component or impregnated with a thermally conductive component; and a cross-linkable resin for impregnating the fiber therewith, a method for manufacturing the same, and a copper clad laminate using the same, so that the prepreg and the copper clad laminate can maintain a low coefficient of thermal expansion and a high modulus of elasticity and have excellent heat radiation property.. .
|Conductive base for forming wiring pattern of collector sheet for solar cells, and method for producing collector sheet for solar cells|
Provided are: a conductive base for forming a wiring pattern of a collector sheet for solar cells, which has good rust inhibiting properties and solderability without using an organic rust inhibitor that may harm a solar cell element; and a method for producing a collector sheet for solar cells, said method using the conductive base. A conductive base for forming a wiring pattern of a collector sheet for solar cells, which is a conductive base (30) wherein a zinc layer (320) composed of zinc is formed on the surface of a copper foil (310), is used.
|Composite anode of lithium-ion batteries|
The present invention provides a composite anode for a battery comprising a copper current collector working electrode, at least one anode material comprising at least one of a carbon, a silicon, a conductive agent, and combinations thereof, wherein at least one anode material is deposited on a surface of the copper current collector working electrode to form the composite anode for a battery. An electrophoretic method for making this anode is provided.
|Printed circuit board having copper plated layer with roughness and method of manufacturing the same|
Disclosed herein are a printed circuit board having a copper plated layer with an anchor shaped surface and roughness by forming the copper plated layer having an anisotropic crystalline orientation structure using a plating inhibitor at the time of forming the copper plated layer serving as a circuit wiring and using composite gas plasma and a dilute acid solution, and a method of manufacturing the same.. .
|Primer-coated copper foil having superior adhesive strength and method for producing the same|
Disclosed herein are a primer-coated copper foil and a method for producing the same. The primer-coated copper foil includes a copper foil layer; and a primer resin layer having a first surface on which the copper foil layer is coated and a second surface as a counter side on which a roughness is formed, so that the primer-coated copper foil can exhibit excellent adhesive strength..
|Synthesis of cyclohexane derivatives useful as sensates in consumer products|
The present invention provides synthetic routes for preparing various isomers of cyclohexane-based coolants, such as menthyl esters and menthanecarboxamide derivatives, in particular those substituted at the amide nitrogen, for example with an aromatic ring or aryl moiety. Such structures have high cooling potency and long lasting sensory effect, which make them useful in a wide variety of consumer products.
|Anti-tumor agent and anti-tumor kit|
An anti-tumor agent comprising combination of a radioactive diacetyl-bis(n4-methylthiosemicarbazone) copper complex and a metabolic inhibitor.. .
|Radiopharmaceutical and pharmaceutical kit|
A radiopharmaceutical comprising combination of a particular radioactive dithiosemicarbazone copper complex, and a chelating agent comprising a multidentate ligand having a maximum dentate number of 2 or more to 4 or less.. .
A loudspeaker includes a shell, a circuit arranged within the shell, a negative pin electrically connected with the circuit, a positive pin electrically connected with the circuit, a flexible printed circuit board, and two spaced copper pads electrically attached on the flexible printed circuit board. Each of the negative and positive pins has a bent portion exposed outside the shell.
|Piezoelectric material, piezoelectric element, and electronic apparatus|
A piezoelectric material includes, as a main component, a perovskite-type metal oxide represented by a general formula (ba1-xcax)a(ti1-y-zsnyzrz)o3 where 1.00≦a≦1.01, 0.125≦x≦0.300, 0≦y≦0.020, and 0.041≦z≦0.074, the perovskite-type metal oxide containing copper (cu) and manganese (mn). A cu content relative to 100 parts by weight of the metal oxide is 0.02 parts by weight or more and 0.60 parts by weight or less on a metal basis, and a mn content relative to 100 parts by weight of the metal oxide is 0.12 parts by weight or more and 0.40 parts by weight or less on a metal basis..
An antenna formed on a semiconductor structure having a substrate with electrical circuits thereon operationally related to the functionality of an antenna and one or more metallic structures formed by a through silicon via, microbump, copper pillar, or redistribution layer proximate to the substrate. The one or more metallic structures form a radiating element of the antenna.
Embodiments of the present invention include diffusion barriers, methods for forming the barriers, and semiconductor devices utilizing the barriers. The diffusion barrier comprises a self-assembled monolayer (sam) on a semiconductor substrate, where one surface of the sam is disposed in contact with and covalently bonded to the semiconductor substrate, and one surface of the monolayer is disposed in contact with and covalently bonded to a metal layer.
|Copper(i) complexes, in particular for optoelectronic components|
The copper(i) complexes may be used in optoelectronic components, particularly in organic light emitting diodes (oleds).. .
|Fire extinguishing composition of copper salts|
Disclosed is a fire extinguishing composition of copper salts, which comprises a compound of copper salts and a fire retardant component with the content of 30 wt %--95 wt % for the former and 5 wt %-70 wt % for the latter respectively. A pyrotechnic agent in the composition serves as heat source and power source, and through being ignited, the pyrotechnic agent is burnt to generate high temperature to enable the composition to perform decomposition reaction so that a large quantity of the resulting fire extinguishing substances can be spouted out with the pyrotechnic agent to achieve an object of fire extinguishing.
|Copper foil for producing graphene and method of producing graphene using the same|
A copper foil for producing graphene, including oxides and sulfides each having a diameter of 0.5 μm or more having a total number of 15/mm2 or less measured by using a scanning electronic microscope before heating at 1000° c. For 1 hour in an atmosphere containing 20% by volume or more of hydrogen and balance argon..
|Copper electroplating solution and method of copper electroplating|
A copper electroplating solution which contains compounds with the structure —x—s—y— wherein x and y are, independently atoms selected from a group consisting of hydrogen, carbon, sulfur, nitrogen, and oxygen, and x and y can be the same only if they are carbon atoms and ninhydrin. By using this copper electroplating solution, it is possible to form good filled vias without worsening the appearance of the plating..
|Lower melting point binder metals|
A copper, manganese, nickel, zinc and tin binder metal composition having a melting point of 1500° f. Or less that includes zinc and tin at a sum weight of about 26.5% to about 30.5% in which zinc is at least about 12% and sn is at least about 6.5%.
|Embedded multilayer ceramic electronic component and printed circuit board having embedded multilayer ceramic electronic component|
There is provided an embedded multilayer ceramic electronic component including: a ceramic body including dielectric layers, having first and second lateral surfaces opposing one another, and having a thickness equal to or less than 250 μm; a first internal electrode and a second internal electrode disposed to face one another with the dielectric layer interposed therebetween; a first external electrode formed on the first lateral surface of the ceramic body and electrically connected to the first internal electrode and a second external electrode formed on the second lateral surface and electrically connected to the second internal electrode; and metal layers formed on the first external electrode and the second external electrode, respectively, and including copper (cu), wherein when a thickness of the metal layers is tp, tp≧5 μm may be satisfied.. .
|Back contact having selenium blocking layer for photovoltaic devices such as copper-indium-diselenide solar cells|
A photovoltaic device (e.g., solar cell) includes: a front substrate (e.g., glass substrate); a semiconductor absorber film; a back contact including a first conductive layer of or including copper (cu) and a second conductive layer of or including molybdenum (mo); and a rear substrate (e.g., glass substrate). A selenium blocking layer is provided between at least the cu inclusive layer and the mo inclusive layer..
|Methods and systems for abrasive cleaning and barrier coating/sealing of pipes|
Methods for abrasive cleaning, deburring pipes, providing barrier coatings and sealing leaks in existing pipes, in a single operation. Pipes can be cleaned in one pass set up by intermittent bursts of dry particulates that are forced and pulled by air throughout the piping system by a generator and a vacuum.
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Copper topics: Molybdenum, Nitrous Oxide, Carbon Dioxide, Semiconductor, Conductive Layer, Copper Alloy, Sulfuric Acid, Sodium Hydroxide, Essential Oil, Mineral Oil, Carbon Monoxide, Electronic Device, Epoxy Resin, Copper Clad Laminate, Benzoxazine
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