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Cadmium patents



      
           
This page is updated frequently with new Cadmium-related patent applications. Subscribe to the Cadmium RSS feed to automatically get the update: related Cadmium RSS feeds. RSS updates for this page: Cadmium RSS RSS


Date/App# patent app List of recent Cadmium-related patents
07/03/14
20140183682
 Avalanche photodiode-type semiconductor structure with low response time and process for producing such a structure patent thumbnailAvalanche photodiode-type semiconductor structure with low response time and process for producing such a structure
The invention relates to an avalanche photodiode-type semiconductor structure (1) intended to receive electromagnetic radiation in a given wavelength. The structure comprises a first semiconductor zone (210) with a first type of conductivity with a first longitudinal face (201), said first zone (210) being made of mercury-cadmium telluride of the cdxhg1-xte type with a cadmium proportion x that is varied.
06/19/14
20140170801
 Methods of fabricating a photovoltaic module, and related system patent thumbnailMethods of fabricating a photovoltaic module, and related system
A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly.
05/29/14
20140147962
 Minority carrier based hgcdte infrared detectors and arrays patent thumbnailMinority carrier based hgcdte infrared detectors and arrays
Disclosed are minority carrier based mercury-cadmium telluride (hgcdte) infrared detectors and arrays, and methods of making, are disclosed. The constructions provided by the invention enable the detectors to be used at higher temperatures, and/or be implemented on less expensive semiconductor substrates to lower manufacturing costs.
05/29/14
20140145097
 Radiation shields and methods of making the same patent thumbnailRadiation shields and methods of making the same
Various non-limiting embodiments disclosed herein generally relate to metallurgically dense radiation shields formed from bismuth alloys comprising from 10 weight percent to 60 weight percent tin that are essentially free of toxic heavy metals chosen from lead, cadmium, and uranium; and radiation attenuation devices comprising the same. Other non-limiting embodiments disclosed herein relate to methods of making metallurgically dense radiation shields comprising bismuth alloys comprising from 10 weight percent to 60 weight percent tin.
05/15/14
20140134838
 Methods of annealing a conductive transparent oxide film layer for use in a thin film photovoltaic device patent thumbnailMethods of annealing a conductive transparent oxide film layer for use in a thin film photovoltaic device
Methods are generally provided for forming a conductive oxide layer on a substrate by sputtering a target to deposit a transparent conductive oxide layer (e.g., comprising comprises cadmium, tin, and oxygen) on the substrate; positioning an anneal surface in close proximity to the transparent conductive oxide layer (e.g., about 3 cm or less); and, annealing the transparent conductive oxide layer while the anneal surface is in close proximity to the transparent conductive oxide layer (e.g., at an anneal temperature of about 500° c. To about 700° c.) to create a localized cadmium vapor between the transparent conductive oxide layer and the anneal surface.
05/15/14
20140132221
 Composition, energy storage device, and related process patent thumbnailComposition, energy storage device, and related process
A positive electrode composition is provided. The positive electrode composition includes at least one electroactive metal selected from the group consisting of titanium, vanadium, niobium, molybdenum, nickel, iron, cobalt, chromium, manganese, silver, antimony, cadmium, tin, lead, copper, zinc, and combination thereof, an alkali metal halide, and aluminum, present in an amount of at least 0.5 weight percent, based on the weight of the positive electrode composition.
05/15/14
20140131826
 Spatially distributed cds in thin film photovoltaic devices and their methods of manufacture patent thumbnailSpatially distributed cds in thin film photovoltaic devices and their methods of manufacture
Thin film photovoltaic devices are provided. The device includes a transparent substrate; a transparent conductive oxide layer on the transparent substrate; an n-type window layer on the transparent conductive oxide layer, an absorber layer on the n-type window layer, and a back contact layer on the absorber layer.
05/08/14
20140127889
System and method for depositing a material on a substrate
A method and apparatus for depositing a film on a substrate includes introducing a material and a carrier gas into a heated chamber. The material may be a semiconductor material, such as a cadmium chalcogenide.
04/17/14
20140102891
 Manufacturing apparatus and method for large-scale production of thin-film solar cells patent thumbnailManufacturing apparatus and method for large-scale production of thin-film solar cells
A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (cu(inxga1-x)se2) absorber layer (x ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology.
04/17/14
20140102776
 Alkali silicate glass based coating and method for applying patent thumbnailAlkali silicate glass based coating and method for applying
A coating for reducing interaction between a surface and the environment around the surface includes an alkali silicate glass material configured to protect the surface from environmental corrosion due to water or moisture. The alkali silicate glass material is doped with a first element to affect various forms of radiation passing through the coating.
04/10/14
20140100376
Process for the electrochemical preparation of gamma-hydroxycarboxylic esters and gamma-lactones
γ-hydroxycarboxylic esters and γ-lactones which are suitable as flavors can be prepared by electrochemical reductive cross-coupling of α,β-unsaturated esters with carbonyl compounds in an undivided electrolysis cell having a cathode composed of lead, lead alloys, cadmium, cadmium alloys, mercury, steel, glassy carbon or boron-doped diamonds and a basic aqueous electrolyte comprising an electrolyte salt which suppresses the cathodic formation of hydrogen.. .
04/10/14
20140099748
Hybrid multi-junction photovoltaic cells and associated methods
A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap group ib-iiib-vib2 material solar absorber layer is formed on the back contact layer.
03/27/14
20140083505
Varying cadmium telluride growth temperature during deposition to increase solar cell reliability
A method for forming thin films or layers of cadmium telluride (cdte) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the cdte layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (cds) heterojunction or layer) suspended over a cdte source to remove moisture to a relatively low preheat temperature.
03/06/14
20140065762
Method of controlling the amount of cu doping when forming a back contact of a photovoltaic cell
Methods for preparing an exposed surface of a p-type absorber layer of a p-n junction for coupling to a back contact in the manufacture of a thin film photovoltaic device are provided. The method can include: applying a treatment solution onto the exposed surface defined by the p-type absorber layer of cadmium telluride; and annealing the device with the p-type absorber layer in contact with the treatment solution to form a tellurium-enriched region in the p-type absorber layer at the exposed surface.
03/06/14
20140060634
Use of an inert graphite layer in a back contact of a photovoltaic cell
Photovoltaic devices are provided that include a transparent superstrate; a transparent conductive oxide on the transparent superstrate; an n-type window layer on the transparent superstrate; a p-type absorber layer on the n-type window layer; and an inert conductive paste layer on the back surface of the p-type absorber layer. The p-type absorber layer includes cadmium telluride, and defines a back surface positioned opposite from the n-type window layer that is tellurium enriched.
03/06/14
20140060633
Back contact paste with te enrichment control in thin film photovoltaic devices
Methods for forming a back contact on a thin film photovoltaic device are provided. The method can include: applying a conductive paste onto a surface defined by a p-type absorber layer (of cadmium telluride) of a p-n junction; and, curing the conductive paste to form a conductive coating on the surface such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium but is substantially consumed during curing.
02/27/14
20140057389
Photovoltaic back contact
A method to preparing cadmium telluride surface before forming metal back contact is disclosed. The method can include removing carbon from cadmium telluride surface..
02/27/14
20140056756
Corrosion protection formulation for protection against zinc and cadmium corrosion
Corrosion protection formulation comprising (a) from 0.01 to 5% by weight of alkylamine ethoxylates as surfactant component, (b) from 0.01 to 10% by weight of corrosion inhibitors, (c) from 0 to 0.3% by weight of thickeners, (d) from 5 to <75% by weight of freezing point-lowering alcohols selected from among alkanols, glycols, polyalkylene glycols and glycerol, (e) from 5 to 90% by weight of vegetable and/or fatty oils, (f) from 0 to 5% by weight of water and (g) from 0 to 5% by weight of conventional emulsifiers. The formulation is particularly suitable for protecting zinc or zinc-plated components or surfaces or cadmium or cadmium-plated metallic surfaces against corrosion caused by runway deicing compositions used at airports..
02/27/14
20140053895
Intentionally-doped cadmium oxide layer for solar cells
A method and structure for a solar cell forms and utilizes a low resistivity and high transmission semiconductor in a top and/or bottom layer (e.g., a top or bottom contact). Some embodiments relate to solar cells having a top or bottom transparent contact layer comprising doped cadmium oxide (cdo) or alloys of cdo..
01/30/14
20140030302
Algal biomass fibers laden with metal for consumer product applications
The present invention also relates to substrates such as a nonwoven comprising an algal biomass fiber material comprising at least one metal ion selected from the group consisting of copper, iron, manganese, potassium, silver, nickel, zinc, cadmium and combinations thereof, wherein said metal-laden algal biomass fiber is present in an amount of from about 1% to about 30%, by weight of the substrate.. .
01/23/14
20140024173
Method of making a multicomponent film
Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit germanium tellurium (gete), antimony tellurium (sbte), antimony germanium (sbge), germanium antimony tellurium (gst), indium antimony tellurium (ist), silver indium antimony tellurium (aist), cadmium telluride (cdte), cadmium selenide (cdse), zinc telluride (znte), zinc selenide (znse), copper indium gallium selenide (cigs) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices..
01/23/14
20140023918
Lead alkaline battery
A rechargeable battery is provided such that the positive electrode comprises lead dioxide, the negative electrode comprises a metal selected from the group consisting of iron, zinc, cadmium, lanthanum/nickel alloys and titanium/zirconium alloys, and the electrolyte is an aqueous alkali-metal acetate. Upon discharge, the lead dioxide is reduced to lead oxide, and the electrolyte remains unchanged.
01/23/14
20140021059
System and process for making formic acid
Methods and systems for electrochemical production of formic acid are disclosed. A method may include, but is not limited to, steps (a) to (d).
01/09/14
20140007938
Laser annealing for thin film solar cells
A method for forming copper indium gallium (sulfide) selenide (cigs) solar cells, cadmium telluride (cdte) solar cells, and copper zinc tin (sulfide) selenide (czts) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification.
01/02/14
20140004655
Manufacturing methods for semiconductor devices
Embodiments of the present invention include a method. The method includes heating a layer stack.
01/02/14
20140000701
Back contact electrodes for cadmium telluride photovoltaic cells
A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer.
12/26/13
20130341529
Microwave induced visible luminescence
An indicator device for detecting high-power microwave radiation is provided, including an electrically-insulating substrate; an electrically-conductive portion disposed on the substrate; and an electroluminescence material disposed on the portion. The electroluminescence material can be zinc-cadmium-sulfide ((zncd)s) crystal doped with manganese (mn) and aluminum (al) as (zncd)s:mn2+,al3+, zinc sulfide (zns) crystal doped with manganese (mn) as zns:mn2+, calcium sulfide (cas) doped with europium (eu) as cas:eu2+, or strontium aluminate (sral2o4) doped with europium and dysprosium as (sral2o4):eu2+,dy3+..
12/19/13
20130337600
Method of processing a semiconductor assembly
A method for processing a semiconductor assembly is presented. The method includes thermally processing a semiconductor assembly in a non-oxidizing atmosphere at a pressure greater than about 10 torr.
11/28/13
20130312824
Method of providing chloride treatment for a photovoltaic device and a chloride treated photovoltaic device
A method of manufacturing a photovoltaic device including depositing a cadmium telluride layer onto a substrate; treating the cadmium telluride layer with a compound comprising chlorine and an element from groups 1-11, zinc, mercury, or copernicium or a combination thereof; and annealing the cadmium telluride layer. A chloride-treated photovoltaic device..
10/31/13
20130284979
Synthesis of highly fluorescent gsh-cdte nanoparticles (quantum dots)
The invention relates to a method for the synthesis of glutathione-capped cadmium-telluride (gsh-cdte) quantum dots in an aqueous medium, including the steps of: a) preparing a precursor solution of cadmium in a citrate buffer; b) adding glutathione (gsh) to the preceding mixture via strong agitation; c) adding a telluride (potassium or sodium telluride) oxyanion as a telluride donor to the preceding mixture; d) allowing the preceding mixture to react; and e) stopping the reaction by incubation at low temperature.. .
10/24/13
20130278539
Method and system for performance testing touch-sensitive devices
A method and apparatus for testing a capacitive touch screen of a touch panel as commonly implemented on mobile and other electronic devices (or another touch-sensing device) are disclosed herein. In at least some embodiments, the method involves placing the touch screen in relation to a photoconductive panel (for example, a panel made from cadmium sulfide) so that the device and panel are adjacent to one another.
10/17/13
20130273370
Ultrathin nanowire-based and nanoscale heterostructure-based thermoelectric conversion structures and method of making same
A nanoscale heterostructure tellurium-based nanowire structure, including a rod-like tellurium nanowire structure and a metal telluride agglomeration connected to the rod-like nanowire structure. The metal telluride agglomeration may have an octahedral shape or a platelet shape.
10/17/13
20130269779
Photoelectric conversion device and solar cell having the same
The photoelectric conversion device of the present invention is a photoelectric conversion device which includes a substrate on which the following are layered in the order listed below: a lower electrode layer; a photoelectric conversion semiconductor layer which includes, as a major component, at least one kind of compound semiconductor having a chalcopyrite structure formed of a group ib element, a group iiib element, and a group vib element; a buffer layer; and a transparent conductive layer, in which a carbonyl ion is provided on a surface of the buffer layer on the side of the transparent conductive layer and the buffer layer is a thin film layer having an average film thickness of 10 nm to 70 nm and includes a ternary compound of a cadmium-free metal, oxygen, and sulfur.. .
10/10/13
20130267750
Method and reactor for cracking hydrocarbon and method for coating the reactor
A reactor has an inner surface accessible to the hydrocarbon and comprising a sintered product of at least one of cerium oxide, zinc oxide, tin oxide, zirconium oxide, boehmite and silicon dioxide, and a perovskite material of formula aabbccddo3-δ. 0<a<1.2, 0≦b≦1.2, 0.9<a+b≦1.2, 0<c<1.2, 0≦d≦1.2, 0.9<c+d≦1.2, −0.5<δ<0.5.
10/10/13
20130266863
Positive electrode material and positive electrode for nickel-zinc secondary battery and method for manufacturing positive electrode
The present invention provides a positive electrode material for a nickel-zinc secondary battery, a positive electrode for a nickel-zinc secondary battery and a method for preparing the positive electrode. The positive electrode material for a nickel-zinc secondary battery provided by the present invention includes: 68 wt %˜69 wt % positive electrode active material, 0.6 wt %˜1 wt % yttrium oxide, 0.2 wt %˜0.6 wt % calcium hydroxide, 3.5 wt %˜4 wt % nickel powder, and a binder in balance; the positive electrode active material being a spherical nickel hydroxide coated with co (iii).
09/12/13
20130233374
Monolithically integrated solar modules and methods of manufacture
A monolithically integrated cadmium telluride (cdte) photovoltaic (pv) module includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer.
09/05/13
20130230945
Method and apparatus for forming a transparent conductive oxide using hydrogen
A method and apparatus for forming a crystalline cadmium stannate layer of a photovoltaic device by heating an amorphous layer in the presence of hydrogen gas.. .
09/05/13
20130230944
Doping an absorber layer of a photovoltaic device via diffusion from a window layer
Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper).
08/15/13
20130212738
Composition for phytochelatin transport
A composition for transportation of phytochelatin including two dna molecule encoding two members of abcc (multidrug resistance-associated protein (mrp)) subfamily of atp-binding cassette (abc) transporter protein in a plant is provided. The composition for transportation of phytochelatin can be useful in accumulating and sequestering phytochelatin alone or in combination with a harmful substance by transporting the phytochelatin and/or harmful substance into the vacuole of a cell, thereby reducing a content of the toxic substance from cytosol, and also reducing it from translocation from the root to the shoot of a plant.
08/15/13
20130211116
Salts of 5-sulfoisophthalic acid and method of making same
This invention relates to methods for the production of various metal salts of 5-sulfoisophthalic acid including those where the metal cation is selected from the group consisting of silver (i), sodium, potassium, rubidium, cesium, magnesium, calcium, strontium, barium, manganese (ii), iron (ii), cobalt (ii), nickel (ii), copper (i), copper (ii), zinc, yttrium, and cadmium. The methods utilize a solvent system that comprises acetic acid or water or a mixture of both.
07/18/13
20130183738
Transgenic plants modified for reduced cadmium transport, derivative products, and related methods
Various embodiments are directed to transgenic plants, including transgenic tobacco plants and derivative seeds, genetically modified to impede the transport of cadmium (cd) from the root system to aerial portions of transgenic plants by reducing the expression levels of hma-related transporters. Various embodiments are directed to transgenic tobacco plants genetically modified to stably express a rnai construct encoding rnai polynucleotides that enable the degradation of endogenous nthma rna variants.
07/18/13
20130183442
Methods of producing cadmium selenide multi-pod nanocrystals
A detecting device for assembly position of vehicle body side walls includes a first detecting device for location surface of front position and/or a second detecting device for location surface of reverse position. The first detecting device includes two first rules (22) and a front detecting sample (21), of which the top surface (27) is flat, and the lower surface (26) is a measuring surface.
07/18/13
20130180579
Photovoltaic device having an absorber multilayer and method of manufacturing the same
A photovoltaic device having an absorber multilayer and methods of manufacturing the same are described. The absorber multilayer, which is formed adjacent to a window layer, may include a doped first cadmium telluride layer which contains a first dopant and an intrinsic second cadmium telluride layer.
07/11/13
20130174895
Back contact buffer layer for thin-film solar cells
A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a cdte/back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer.
06/27/13
20130160810
Photovoltaic device and method of making
A photovoltaic device having n-i-p or p-i-n configuration is presented. The device includes a first semiconductor layer, a second semiconductor layer and an intrinsic layer interposed between the first semiconductor layer and the second semiconductor layer.
06/20/13
20130158267
Method of synthesizing the complex [zn(nns)2] active against the malaria parasite plasmodium
Metal complex of zinc(ii) containing a dithio-based ligand have been synthesized and characterized by elemental analysis, mass spectrometry, proton nmr and ft-ir spectrometry. A single crystal x-ray structure of the cadmium complex has been analyzed.
06/20/13
20130155493
Walk-off compensator with tilt function
Techniques and structure are disclosed for implementing a spatial walk-off compensation mechanism having an integral tilt function. In some embodiments, the mechanism may comprise a tilt-ball mount having an integrated walk-off compensation medium.
06/13/13
20130150582
Method of synthesizing the complex [ni (nns)2] active against the malaria parasite plasmodium falciparum
Metal complex of nickel (ii) containing a dithio-based ligand have been synthesized and characterized by elemental analysis, mass spectrometry, proton nmr and ft-ir spectrometry. A single crystal x-ray structure of the cadmium complex has been analyzed.
05/30/13
20130137871
Method of synthesizing a complex [mn (nns)2] active against the malaria parasite plasmodium falciparum
Metal complex of manganese(ii) containing a dithio-based ligand have been synthesized and characterized by elemental analysis, mass spectrometry, proton nmr and ft-ir spectrometry. A single crystal x-ray structure of the cadmium complex has been analyzed.


Popular terms: [SEARCH]

Cadmium topics: Cadmium Telluride, Touch Screen, Window Layer, Electric Conversion, Conductive Layer, Calcium Hydroxide, Zinc Oxide, Silicon Dioxide, Semiconductor, Buffer Layer, Cadmium Sulfide, Quantum Dot, Incubation, Glutathione, Nanoparticle

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This listing is a sample listing of patent applications related to Cadmium for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Cadmium with additional patents listed. Browse our RSS directory or Search for other possible listings.
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