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Buffer Layer patents



      
           
This page is updated frequently with new Buffer Layer-related patents. Subscribe to the Buffer Layer RSS feed to automatically get the update: related Buffer RSS feeds.

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Date/App# patent app List of recent Buffer Layer-related patents
04/10/14
20140099750
 Solution containment during buffer layer deposition patent thumbnailnew patent Solution containment during buffer layer deposition
Improved methods and apparatus for forming thin-film layers of chalcogenide on a substrate web. Solutions containing the reactants for the chalcogenide layer may be contained substantially to the front surface of the web, controlling the boundaries of the reaction and avoiding undesired deposition of chalcogenide upon the back side of the web..
04/10/14
20140097447
 Semiconductor device and method of manufacturing the same patent thumbnailnew patent Semiconductor device and method of manufacturing the same
Disclosed herein is a semiconductor device and method of manufacturing the semiconductor, including an n type buffer layer disposed on a first surface of an n+ type silicon carbide substrate, an n− type epitaxial layer disposed on the n type buffer layer, a first type of trench disposed on each side of a second type of trench, wherein the trenches are disposed in the n− type epitaxial layer, an n+ region disposed on the n− type epitaxial layer, a p+ region disposed in each first type of trench, a gate insulating layer disposed in the second trench, a gate material disposed on the gate insulating layer, an oxidation layer disposed on the gate material, a source electrode disposed on the n+ region, oxidation layer, and p+ region, and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate.. .
04/10/14
20140097445
 Semiconductor device patent thumbnailnew patent Semiconductor device
A transistor sel is formed by using a compound semiconductor layer (channel layer cnl). The channel layer cnl is formed over a buffer layer buf.
04/10/14
20140097444
 Nitride semiconductor device patent thumbnailnew patent Nitride semiconductor device
A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate.
04/10/14
20140097443
 Nitride semiconductor device patent thumbnailnew patent Nitride semiconductor device
A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor stacked layer, a light-emitting layer and a second type nitride semiconductor layer. The nucleation layer is disposed on the silicon substrate.
04/10/14
20140097442
 Nitride semiconductor device patent thumbnailnew patent Nitride semiconductor device
A nitride semiconductor device includes a silicon substrate, a nucleation layer, a first buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate.
04/10/14
20140097425
 Organic el element, organic el panel having organic el element, organic el light-emitting apparatus, and organic el display apparatus patent thumbnailnew patent Organic el element, organic el panel having organic el element, organic el light-emitting apparatus, and organic el display apparatus
An organic el element comprises: an anode; a cathode; a buffer layer; and a hole injection layer between the anode and the buffer layer. The hole injection layer includes a nickel oxide that includes both nickel atoms with a valence of three and nickel atoms with a valence of two.
04/03/14
20140094223
 Epitaxial buffer layers for group iii-n transistors on silicon substrates patent thumbnailEpitaxial buffer layers for group iii-n transistors on silicon substrates
Embodiments include epitaxial semiconductor stacks for reduced defect densities in iii-n device layers grown over non-iii-n substrates, such as silicon substrates. In embodiments, a metamorphic buffer includes an alxin1-xn layer lattice matched to an overlying gan device layers to reduce thermal mismatch induced defects.
04/03/14
20140094022
 Method for making epitaxial structure patent thumbnailMethod for making epitaxial structure
A method for making an epitaxial structure is provided. The method includes the following steps.
04/03/14
20140091318
 Semiconductor apparatus patent thumbnailSemiconductor apparatus
A semiconductor apparatus includes: a substrate; a buffer layer formed on the substrate; a strained layer superlattice buffer layer formed on the buffer layer; an electron transit layer formed of a semiconductor material on the strained layer superlattice buffer layer; and an electron supply layer formed of a semiconductor material on the electron transit layer; the strained layer superlattice buffer layer being an alternate stack of first lattice layers including aln and second lattice layers including gan; the strained layer superlattice buffer layer being doped with one, or two or more impurities selected from fe, mg and c.. .
04/03/14
20140091314
Semiconductor apparatus
A semiconductor apparatus includes a buffer layer formed on a substrate; an sls (strained layer supperlattice) buffer layer formed on the buffer layer; an electron transit layer formed on the sls buffer layer and formed of a semiconductor material; and an electron supply layer formed on the electron transit layer and formed of a semiconductor material. Further, the buffer layer is formed of algan and includes two or more layers with different al composition ratios, the sls buffer layer is formed by alternately laminating a first lattice layer including aln and a second lattice layer including gan, and the al composition ratio in one of the layers of the buffer layer being in contact with the sls buffer layer is greater than or equal to an al effective composition ratio in the sls buffer layer..
04/03/14
20140091313
Semiconductor apparatus
A semiconductor apparatus includes a substrate; a buffer layer formed on the substrate; a first semiconductor layer formed on the buffer layer; and a second semiconductor layer formed on the first semiconductor layer. Further, the buffer layer is formed of algan and doped with fe, the buffer layer includes a plurality of layers having different al component ratios from each other, and the al component ratio of a first layer is greater than the al component ratio of a second layer and a fe concentration of the first layer is less than the fe concentration of the second layer, the first and second layers being included in the plurality of layers, and the first layer being formed on a substrate side of the second layer..
04/03/14
20140091309
Predisposed high electron mobility transistor
A predisposed high electron mobility transistor (hemt) is disclosed. The predisposed hemt includes a buffer layer, a hemt channel layer on the buffer layer, a first hemt barrier layer over the hemt channel layer, and a hemt cap layer on the first hemt barrier layer.
04/03/14
20140091307
Laser power and energy sensor utilizing anisotropic thermoelectric material
A laser-radiation sensor includes a copper substrate on which is grown an oriented polycrystalline buffer layer surmounted by an oriented polycrystalline sensor-element of an anisotropic transverse thermoelectric material. An absorber layer, thermally connected to the sensor -element, is heated by laser-radiation to be measured and communicates the heat to the sensor-element, causing a thermal gradient across the sensor-element.
04/03/14
20140091304
Laser power and energy sensor utilizing anisotropic thermoelectric material
A laser-radiation sensor includes a copper substrate on which is grown an oriented polycrystalline buffer layer surmounted by an oriented polycrystalline sensor-element of an anisotropic transverse thermoelectric material. An absorber layer, thermally connected to the sensor-element, is heated by laser-radiation to be measured and communicates the heat to the sensor-element, causing a thermal gradient across the sensor-element.
04/03/14
20140090706
Solar cell apparatus and method of fabricating the same
A solar cell apparatus according to the embodiment includes a substrate; a back electrode layer on the substrate; a light absorbing layer on the back electrode layer; a first buffer layer including cds on the light absorbing layer; a second buffer layer including zn on the first buffer layer; and a window layer on the second buffer layer.. .
03/27/14
20140087545
Method for producing a group iii nitride semiconductor
The surface of a sapphire substrate having a c-plane main surface is patterned by icp dry etching. The patterned sapphire substrate is thermally treated in a hydrogen or nitrogen atmosphere at a temperature of less than 700° c.
03/27/14
20140087522
Reducing delamination between an underfill and a buffer layer in a bond structure
A die includes a metal pad, a passivation layer, and a patterned buffer layer over the passivation layer. The patterned buffer layer includes a plurality of discrete portions separated from each other.
03/27/14
20140084471
Interconnect structures comprising flexible buffer layers
A structure includes a substrate, a low-k dielectric layer over the substrate, and a conductive barrier layer extending into the low-k dielectric layer. The conductive barrier layer includes a sidewall portion.
03/27/14
20140084464
Passivation scheme
A method includes forming a passivation layer over an electrically conductive pad. A stress buffer layer is formed over the passivation layer.
03/27/14
20140084338
Semiconductor wafer, semiconductor device, and method for manufacturing nitride semiconductor layer
According to one embodiment, a semiconductor wafer includes a substrate, an aln buffer layer, a foundation layer, a first high ga composition layer, a high al composition layer, a low al composition layer, an intermediate unit and a second high ga composition layer. The first layer is provided on the foundation layer.
03/27/14
20140084298
Nitride compound semiconductor device and manufacturing method thereof
A nitride compound semiconductor device includes: a substrate; a buffer layer formed on the substrate and including a plurality of composite layers each layered of: a first layer formed of a nitride compound semiconductor; and a second layer formed of a nitride compound semiconductor containing aluminum and having a lattice constant smaller than a lattice constant of the first layer; a semiconductor operating layer formed on the buffer layer; and a plurality of electrodes formed on the semiconductor operating layer. At least one of the second layers has oxygen added therein..
03/27/14
20140084296
Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer
A nitride semiconductor wafer includes a silicon substrate, a stacked multilayer unit, a silicon-containing unit, and an upper layer unit. The silicon substrate has a major surface.
03/27/14
20140084266
Semi-transparent, transparent, stacked and top-illuminated organic photovoltaic devices
An electro-optic device includes a first electrode, an active layer formed over and electrically connected with the first electrode, a buffer layer formed over and electrically connected with the active layer, and a second electrode formed directly on the buffer layer. The second electrode includes a plurality of nanowires interconnected into a network of nanowires.
03/27/14
20140084246
Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
Semiconductor devices having germanium active layers with underlying parasitic leakage barrier layers are described. For example, a semiconductor device includes a first buffer layer disposed above a substrate.
03/27/14
20140084241
Group iii nitride semiconductor light-emitting device and method for producing the same
The invention provides a group iii nitride semiconductor light-emitting device in which the strain in the light-emitting layer is relaxed, thereby attaining high light emission efficiency, and a method for producing the device. The light-emitting device of the present invention has a substrate, a low-temperature buffer layer, an n-type contact layer, a first esd layer, a second esd layer, an n-side superlattice layer, a light-emitting layer, a p-side superlattice layer, a p-type contact layer, an n-type electrode n1, a p-type electrode p1, and a passivation film f1.
03/20/14
20140078077
Organic light emitting display
Disclosed is an organic light emitting display an organic light emitting display that can efficiently prevent permeation of moisture in a structure including an in-cell touch electrode array, the uppermost layer of the second buffer layer contacting the sealant between the dead region adjacent to the touch pad portion and the touch pads is an inorganic film.. .
03/20/14
20140077259
Semiconductor device
A carrier is prevented from being stored in a guard ring region in a semiconductor device. The semiconductor device has an igbt cell including a base region and an emitter region formed in an n− type drift layer, and a p type collector layer arranged under the drift layer with a buffer layer interposed therebetween.
03/20/14
20140077255
Semiconductor device
A semiconductor device has semiconducting layers forming a collector layer, a buffer layer, a drift layer, a base layer, and an emitter layer. The drift layer has alternating regions of n-type and p-type semiconductor material arrayed along a first direction.
03/13/14
20140073115
Method of manufacturing large area gallium nitride substrate
A method of manufacturing a large area gallium nitride (gan) substrate includes forming a buffer layer on a silicon substrate, forming an insulation layer pattern on a rim of a top surface of the buffer layer, growing a gan layer on the buffer layer, and removing the insulation layer pattern and a portion of the gan layer and the silicon substrate.. .
03/13/14
20140073077
Method for epitaxial growth of light emitting diode
A method for epitaxial growth of a light emitting diode, includes following steps: providing a substrate; forming a buffer layer on the substrate; forming a first epitaxial layer on the buffer layer in a first temperature; forming a second epitaxial layer on the first epitaxial layer in a second temperature lower than the first temperature, thereby forming a first rough surface on the second epitaxial layer; etching the second epitaxial layer and the first epitaxial layer until a second rough surface is formed on the first epitaxial layer; forming a mask layer on the rough surface of the first epitaxial layer; partly etching the mask layer to form a plurality of protrusions with the first epitaxial layer exposed thereamong; and forming an n-type epitaxial layer, an active layer and a p-type epitaxial layer on the first epitaxial layer in sequence.. .
03/13/14
20140070410
Semiconductor device and method of forming multi-layered ubm with intermediate insulating buffer layer to reduce stress for semiconductor wafer
A semiconductor wafer has a contact pad. A first insulating layer is formed over the wafer.
03/13/14
20140070268
Semiconductor device and semiconductor device manufacturing method
In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an n− type drift layer. Also, the n-type field-stop layer can have a concentration gradient such that the impurity concentration of the n-type field-stop layer decreases from a p+ type collector layer toward a p-type base layer, and the diffusion depth is 20 μm or more.
03/06/14
20140065814
Manufacturing method for micro bump structure
A manufacturing method for a micro bump structure includes the following steps as follows. A substrate is provided and a under bump metallurgy (ubm) is formed on the substrate for accommodating a solder ball.
03/06/14
20140065804
Low temperature polysilicon thin film and manufacturing method thereof
An embodiment of the present invention relates to a low temperature polysilicon thin film and a manufacturing method thereof. The manufacturing method comprises: forming a buffer layer on a substrate (s11); forming a seed layer comprising a plurality of uniformly distributed crystal nuclei on the buffer layer by using a patterning process (s12); forming an amorphous silicon layer on the seed layer (s13); and performing an excimer laser annealing process on the amorphous silicon layer (s14)..
03/06/14
20140065743
Method of manufacturing light emitting diode die
An exemplary method of manufacturing a light emitting diode (led) die includes steps: providing a preformed led structure, the led structure including a first substrate, and a nucleation layer, a buffer layer, an n-type layer, a muti-quantum well layer and an p-type layer formed successively on the first substrate; forming at least one insulation block on the p-type layer; forming a mirror layer on the on the p-type layer and covering the insulation block; forming a conductive second substrate on the mirror layer; removing the first substrate, the nucleation layer and the buffer layer and exposing a bottom surface of the n-type layer; and disposing one n-electrode on the exposed surface of the n-type layer. The n-electrode is located corresponding to the insulation block..
03/06/14
20140062909
Organic light emitting display and method for manufacturing the same
A organic light emitting display includes a plurality of touch pads spaced from one another in the touch pad portion, each of the touch pads including a metal pad layer and a transparent electrode pad layer connected to the metal pad layer via a plurality of first contact holes in a first insulating film, a dummy pad portion formed in the dead region of the first buffer layer, the dummy pad portion comprising a plurality of dummy pads corresponding to the touch pads, and a sealant comprising a plurality of conductive balls between the touch pad portion and the dummy pad portion.. .
03/06/14
20140061695
Light-emitting diode with a mirror protection layer
A light-emitting diode (led) with a mirror protection layer includes sequentially stacked an n-type electrode, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a p-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer.
03/06/14
20140061693
Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer
According to one embodiment, a nitride semiconductor wafer includes: a silicon substrate; a buffer section provided on the silicon substrate; and a functional layer provided on the buffer section and contains nitride semiconductor. The buffer section includes first to n-th buffer layers (n being an integer of 4 or more) containing nitride semiconductor.
03/06/14
20140061665
Nitride semiconductor wafer
A nitride semiconductor wafer includes a substrate, and a buffer layer formed on the substrate and including an alternating layer of alxga1-xn (0≦x≦0.05) and alyga1-yn (0<y≦1 and x<y) layers. Only the alyga1-yn layer in the alternating layer is doped with an acceptor..
03/06/14
20140061597
Organic light emitting display and method for manufacturing the same
Disclosed are an organic light emitting display that has a configuration excluding a polarizing plate and exhibits improved flexibility and visibility, and a method for manufacturing the same, the organic light emitting display includes a touch electrode array facing the organic light emitting diode on the second buffer layer, the touch electrode array including first and second touch electrodes intersecting each other and an exterior light shielding layer including at least a color filter layer, an adhesive layer formed between the organic light emitting diode and the touch electrode array.. .
03/06/14
20140060631
Compound semiconductor solar battery and method for manufacturing compound semiconductor solar battery
A compound semiconductor solar battery including a first compound semiconductor photoelectric conversion cell (40a), a second compound semiconductor photoelectric conversion cell (40b) provided on the first compound semiconductor photoelectric conversion cell (40a), and a compound semiconductor buffer layer (41) provided between the first compound semiconductor photoelectric conversion cell (40a) and the second compound semiconductor photoelectric conversion cell (40b), the first compound semiconductor photoelectric conversion cell (40a) and the compound semiconductor buffer layer (41) being provided adjacent to each other, and a ratio of a difference in lattice constant between the first compound semiconductor photoelectric conversion cell (40a) and a compound semiconductor layer (30) provided in a position closest to the first compound semiconductor photoelectric conversion cell (40a) among compound semiconductor layers constituting the compound semiconductor buffer layer (41) being not less than 0.15% and not more than 0.74%, and a method for manufacturing the same are provided.. .
03/06/14
20140060603
Device for converting thermal energy into electrical energy
A current source and method of producing the current source are provided. The current source includes a metal source, a buffer layer, a filter and a collector.
02/27/14
20140057428
Buffer layer for sintering
A layer of material having a low thermal conductivity is coated over a substrate. A film of conductive ink is then coated over the layer of material having the low thermal conductivity, and then sintered.
02/27/14
20140057419
Method for forming low temperature polysilicon thin film
Embodiments of the present invention provide a method for forming a low temperature polysilicon thin film. The method for forming the low temperature polysilicon thin film can comprise: depositing a buffer layer and an amorphous silicon layer on a substrate in this order; heating the amorphous silicon layer; performing an excimer laser annealing process on the amorphous silicon layer to form a polysilicon layer; oxidizing partially the polysilicon layer so as to form an oxidation portion at an upper portion of the polysilicon layer; and removing the oxidation portion of the polysilicon layer to form a polysilicon thin film..
02/27/14
20140057418
Method for manufacturing a semiconductor device
The present invention discloses a method for manufacturing a high mobility material layer, comprising: forming a plurality of precursors in/on a substrate; and performing a pulse laser processing such that the plurality of precursors react with each other to produce a high mobility material layer. Furthermore, the present invention also provides a method for manufacturing a semiconductor device, comprising: forming a buffer layer on an insulating substrate; forming a first high mobility material layer on the buffer layer using the method for manufacturing the high mobility material layer; forming a second high mobility material layer on the first high mobility material layer using the method for manufacturing the high mobility material layer; and forming trench isolations and defining active regions in the first and second high mobility material layers..
02/27/14
20140054648
Needle-shaped profile finfet device
Structures and methods are presented relating to formation of finfet semiconducting devices. A finfet device is presented comprising fin(s) formed on a substrate, wherein the fin(s) has a needle-shaped profile.
02/27/14
20140054610
Semiconductor device and method for growing semiconductor crystal
A semiconductor device comprises a base substrate, a pattern on the base substrate, a buffer layer on the base substrate, and an epitaxial layer on the buffer. The pattern is a self-assembled pattern.
02/27/14
20140054609
Large high-quality epitaxial wafers
Large high-quality epitaxial wafers are disclosed. Embodiments of the invention provide silicon carbide epitaxial wafers with low basal plane dislocation (bpd) densities.
02/27/14
20140054599
Flexible semiconductor devices and methods of manufacturing the same
A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer.
02/27/14
20140054568
Semiconductor device, method of manufacturing the same, and electronic apparatus
A semiconductor device includes: a gate electrode; an organic semiconductor film forming a channel; and a pair of source-drain electrodes formed on the organic semiconductor film, the pair of source-drain electrodes each including a connection layer, a buffer layer, and a wiring layer that are laminated in order.. .
02/27/14
20140054547
Device with strained layer for quantum well confinement and method for manufacturing thereof
The disclosed technology relates to transistors having a strained quantum well for carrier confinement, and a method for manufacturing thereof. In one aspect, a finfet or a planar fet device comprises a semiconductor substrate, a strain-relaxed buffer layer comprising ge formed on the semiconductor substrate, a channel layer formed on the strain-relaxed buffer layer, and a strained quantum barrier layer comprising sige interposed between and in contact with the strain-relaxed buffer layer and the channel layer.
02/27/14
20140053904
Photoelectric conversion element and solar cell
A photoelectric conversion element of an embodiment includes: a light absorbing layer containing cu, at least one group iiib element selected from the group including al, in and ga, and s or se, and having a chalcopyrite structure; and a buffer layer formed from zn and o or s, in which the ratio s/(s+o) in the area extending in the buffer layer up to 10 nm from the interface between the light absorbing layer and the buffer layer, is equal to or greater than 0.7 and equal to or less than 1.0.. .
02/27/14
20140053903
Photoelectric conversion element and solar cell
A photoelectric conversion element of an embodiment includes: a light absorbing layer containing copper (cu), at least one group iiib element selected from the group including aluminum (al), indium (in) and gallium (ga), and sulfur (s) or selenium (se), and having a chalcopyrite structure; and a buffer layer formed from zinc (zn) and oxygen (o) or sulfur (s), wherein the molar ratio represented by s/(s+o) of the buffer layer is equal to or greater than 0.7 and equal to or less than 1.0, and the crystal grain size is equal to or greater than 10 nm and equal to or less than 100 nm.. .
02/20/14
20140051210
Nonvolatile memory elements
Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer.
02/20/14
20140050845
Preparation of hollow polymer microspheres
The present invention of three-stage process relates to preparing hollow particles with a buffer layer, exhibiting integrity of particle structure and uniformity of particle size, used in plastic or paper coating, and showing superior characteristics of gloss, whiteness, high opacity, high printing color density and good water resistance.. .
02/20/14
20140048997
Device for assembling camera module with high quality
A device for assembling a camera module includes a base and a buffer layer. The camera module includes a flexible printed circuit board (fpcb), a lens module positioned on the fpcb, and a stiffener adhering to the fpcb, opposite to the lens module.
02/20/14
20140048933
Semiconductor device including a buffer layer structure for reducing stress
A semiconductor device includes a semiconductor chip, wiring that is included in the semiconductor chip and has a coupling part between parts with different widths, a pad being formed above the wiring and in a position overlapping the coupling part, a bump being formed on the pad, a buffer layer being formed in a position between the coupling part and the pad so as to cover the entire coupling part, and inorganic insulating layers being formed between the wiring and the buffer layer and between the buffer layer and the pad, respectively. The buffer layer is made of a material other than resin and softer than the inorganic insulating layer.
02/20/14
20140048823
Semiconductor stacked body, method for manufacturing same, and semiconductor element
A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a ga203 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an ain buffer layer formed on the ga203 substrate, and a nitride semiconductor layer formed on the ain buffer layer.. .
02/20/14
20140048801
Semiconductor device and manufacturing method thereof
A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved.
02/20/14
20140048199
Adhesive tape and method for producing substrate using the same
There are provided an adhesive tape and a method for producing a substrate using the same. The adhesive tape including: a reinforcement layer supporting the adhesive tape; a buffer layer formed on one surface of the reinforcement layer and performing a buffering operation; and an adhesive layer formed on one surface of the buffer layer..
02/20/14
20140048132
Solar cell and method of preparing the same
A solar cell includes a substrate, a back electrode layer provided on the substrate, a light absorbing layer provided on the back electrode layer, a buffer layer including zns and provided on the light absorbing layer, and a window layer provided on the buffer layer.. .
02/13/14
20140045284
Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure
A method of manufacturing a semiconductor device includes forming a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer.
02/13/14
20140042558
Method of fabrication of semiconductor device
The invention relates to a method of fabricating a semiconductor device, the method including: providing a stacked semiconductor structure having a substrate, a buffer layer and one or more device layers; depositing a layer of alsb on one or more regions of the upper surface of the stacked structure; and oxidising the alsb layer in the presence of water to form a layer of aluminium oxide on the one or more regions of the upper surface. The semiconductor device is preferably a field effect transistor, and the method preferably includes the additional step of depositing source, drain and/or gate electrodes.
02/13/14
20140042492
Semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the semiconductor buffer structure
A semiconductor buffer structure may include a silicon substrate and a buffer layer that is formed on the silicon substrate. The buffer layer may include a first layer, a second layer formed on the first layer, and a third layer formed on the second layer.
02/13/14
20140042455
Field effect transistor device
A field effect transistor device is provided by the invention. The field effect transistor device includes: a substrate; a buffer layer, a channel layer, and a first barrier layer sequentially disposed on the substrate; a two-dimensional electron gas controlling layer disposed on the first barrier layer; a second barrier layer disposed on the two-dimensional electron gas controlling layer, wherein the second barrier layer has a recess passing through the second barrier layer; and a gate electrode filled into the recess and separated from the second barrier layer and the two-dimensional electron gas controlling layer by an insulating layer..
02/13/14
20140042454
Semiconductor light emtting device
A semiconductor light emitting device includes a substrate, a buffer layer disposed on the substrate, the buffer layer comprising aluminum nitride, a composition grading layer disposed on the buffer layer, the composition grading layer comprising first aluminum nitride and second aluminum nitride, a capping layer disposed on the composition grading layer, and a cladding layer disposed on the capping layer. A composition of the first aluminum nitride and a composition of the second aluminum nitride change gradually in an alternating manner..
02/13/14
20140042428
Display apparatus and method of manufacturing the display apparatus
A display apparatus includes a base substrate and a buffer layer disposed on the base substrate. The display apparatus further includes an oxide semiconductor layer disposed on the buffer layer and including a source electrode, a drain electrode, and a channel portion.
02/13/14
20140042403
Organic light emitting diode display
An organic light emitting diode display according to an exemplary embodiment includes a substrate, a pixel electrode on the substrate, an organic emission layer on the pixel electrode, a common electrode on the organic emission layer, a cover layer on the common electrode, an oxidation reducing layer on the cover layer, and a thin film encapsulation layer covering the oxidation reducing layer, the oxidation reducing layer being configured to reduce oxidation of the common electrode, the oxidation reducing layer being separated from the common electrode. The oxidation reducing layer may include at least one of a dummy common electrode, an ultraviolet ray (uv) blocking layer, and a buffer layer..
02/13/14
20140041517
Defence system
A defence system 2, 60, 70, 100 comprising a net layer 4, 62, 72 and a buffer layer 6, 64, 74 wherein the buffer layer 6, 64, 74 is provided in front of the net layer 4, 62, 72.. .
02/06/14
20140038349
Doner substrates and methods of manufacturing organic light emitting display devices using donor substrates
A donor substrate may include a base layer, a light to heat conversion layer disposed on the base layer, a buffer layer disposed on the light to heat conversion layer, an organic transfer layer disposed on the buffer layer, and a tightening member disposed on a peripheral portion of the organic transfer layer. The tightening member may include an adhesive film having an adhesion strength controlled by an irradiation of an ultraviolet ray.
02/06/14
20140038344
Thin film solar cells
Embodiments relate to a method including forming a layer of copper zinc tin sulfide (czts) on a first layer of molybdenum (mo) and annealing the czts layer and the first mo layer to form a layer of molybdenum disulfide (mos2) between the layer of czts and the first layer of mo. The method includes forming a back contact on a first surface of the czts layer opposite the first mo layer and separating the first mo layer and the mos2 layer from the czts layer to expose a second surface of the czts layer opposite the first surface.
02/06/14
20140038088
Method of fabricating a lithography mask
A method of fabricating an extreme ultraviolet (euv) mask is disclosed. The method includes providing a substrate, forming a reflective multilayer (ml) over the substrate, forming a buffer layer over the reflective ml, forming an absorption layer over the buffer layer and forming a capping layer over the absorption layer.


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Buffer Layer topics: Buffer Layer, Semiconductor, Gallium Nitride, Nanoparticle, Treatments, Semiconductor Material, Silicon Nitride, Offset Spacer, Shallow Trench Isolation, Semiconductor Substrate, Mim Capacitor, Memory Cells, Memory Cell, Integrated Circuit, Epitaxial Growth

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This listing is a sample listing of patents related to Buffer Layer for is only meant as a recent sample of applications filed, not a comprehensive history. There may be associated servicemarks and trademarks related to these patents. Please check with patent attorney if you need further assistance or plan to use for business purposes. This patent data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Buffer Layer with additional patents listed. Browse our RSS directory or Search for other possible listings.
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