|| List of recent Buffer Layer-related patents
| Manufacturing method for micro bump structure|
A manufacturing method for a micro bump structure includes the following steps as follows. A substrate is provided and a under bump metallurgy (ubm) is formed on the substrate for accommodating a solder ball.
| Low temperature polysilicon thin film and manufacturing method thereof|
An embodiment of the present invention relates to a low temperature polysilicon thin film and a manufacturing method thereof. The manufacturing method comprises: forming a buffer layer on a substrate (s11); forming a seed layer comprising a plurality of uniformly distributed crystal nuclei on the buffer layer by using a patterning process (s12); forming an amorphous silicon layer on the seed layer (s13); and performing an excimer laser annealing process on the amorphous silicon layer (s14)..
| Method of manufacturing light emitting diode die|
An exemplary method of manufacturing a light emitting diode (led) die includes steps: providing a preformed led structure, the led structure including a first substrate, and a nucleation layer, a buffer layer, an n-type layer, a muti-quantum well layer and an p-type layer formed successively on the first substrate; forming at least one insulation block on the p-type layer; forming a mirror layer on the on the p-type layer and covering the insulation block; forming a conductive second substrate on the mirror layer; removing the first substrate, the nucleation layer and the buffer layer and exposing a bottom surface of the n-type layer; and disposing one n-electrode on the exposed surface of the n-type layer. The n-electrode is located corresponding to the insulation block..
| Organic light emitting display and method for manufacturing the same|
A organic light emitting display includes a plurality of touch pads spaced from one another in the touch pad portion, each of the touch pads including a metal pad layer and a transparent electrode pad layer connected to the metal pad layer via a plurality of first contact holes in a first insulating film, a dummy pad portion formed in the dead region of the first buffer layer, the dummy pad portion comprising a plurality of dummy pads corresponding to the touch pads, and a sealant comprising a plurality of conductive balls between the touch pad portion and the dummy pad portion.. .
| Light-emitting diode with a mirror protection layer|
A light-emitting diode (led) with a mirror protection layer includes sequentially stacked an n-type electrode, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a p-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer.
| Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer|
According to one embodiment, a nitride semiconductor wafer includes: a silicon substrate; a buffer section provided on the silicon substrate; and a functional layer provided on the buffer section and contains nitride semiconductor. The buffer section includes first to n-th buffer layers (n being an integer of 4 or more) containing nitride semiconductor.
| Nitride semiconductor wafer|
A nitride semiconductor wafer includes a substrate, and a buffer layer formed on the substrate and including an alternating layer of alxga1-xn (0≦x≦0.05) and alyga1-yn (0<y≦1 and x<y) layers. Only the alyga1-yn layer in the alternating layer is doped with an acceptor..
| Organic light emitting display and method for manufacturing the same|
Disclosed are an organic light emitting display that has a configuration excluding a polarizing plate and exhibits improved flexibility and visibility, and a method for manufacturing the same, the organic light emitting display includes a touch electrode array facing the organic light emitting diode on the second buffer layer, the touch electrode array including first and second touch electrodes intersecting each other and an exterior light shielding layer including at least a color filter layer, an adhesive layer formed between the organic light emitting diode and the touch electrode array.. .
| Compound semiconductor solar battery and method for manufacturing compound semiconductor solar battery|
A compound semiconductor solar battery including a first compound semiconductor photoelectric conversion cell (40a), a second compound semiconductor photoelectric conversion cell (40b) provided on the first compound semiconductor photoelectric conversion cell (40a), and a compound semiconductor buffer layer (41) provided between the first compound semiconductor photoelectric conversion cell (40a) and the second compound semiconductor photoelectric conversion cell (40b), the first compound semiconductor photoelectric conversion cell (40a) and the compound semiconductor buffer layer (41) being provided adjacent to each other, and a ratio of a difference in lattice constant between the first compound semiconductor photoelectric conversion cell (40a) and a compound semiconductor layer (30) provided in a position closest to the first compound semiconductor photoelectric conversion cell (40a) among compound semiconductor layers constituting the compound semiconductor buffer layer (41) being not less than 0.15% and not more than 0.74%, and a method for manufacturing the same are provided.. .
| Device for converting thermal energy into electrical energy|
A current source and method of producing the current source are provided. The current source includes a metal source, a buffer layer, a filter and a collector.
|Buffer layer for sintering|
A layer of material having a low thermal conductivity is coated over a substrate. A film of conductive ink is then coated over the layer of material having the low thermal conductivity, and then sintered.
|Method for forming low temperature polysilicon thin film|
Embodiments of the present invention provide a method for forming a low temperature polysilicon thin film. The method for forming the low temperature polysilicon thin film can comprise: depositing a buffer layer and an amorphous silicon layer on a substrate in this order; heating the amorphous silicon layer; performing an excimer laser annealing process on the amorphous silicon layer to form a polysilicon layer; oxidizing partially the polysilicon layer so as to form an oxidation portion at an upper portion of the polysilicon layer; and removing the oxidation portion of the polysilicon layer to form a polysilicon thin film..
|Method for manufacturing a semiconductor device|
The present invention discloses a method for manufacturing a high mobility material layer, comprising: forming a plurality of precursors in/on a substrate; and performing a pulse laser processing such that the plurality of precursors react with each other to produce a high mobility material layer. Furthermore, the present invention also provides a method for manufacturing a semiconductor device, comprising: forming a buffer layer on an insulating substrate; forming a first high mobility material layer on the buffer layer using the method for manufacturing the high mobility material layer; forming a second high mobility material layer on the first high mobility material layer using the method for manufacturing the high mobility material layer; and forming trench isolations and defining active regions in the first and second high mobility material layers..
|Needle-shaped profile finfet device|
Structures and methods are presented relating to formation of finfet semiconducting devices. A finfet device is presented comprising fin(s) formed on a substrate, wherein the fin(s) has a needle-shaped profile.
|Semiconductor device and method for growing semiconductor crystal|
A semiconductor device comprises a base substrate, a pattern on the base substrate, a buffer layer on the base substrate, and an epitaxial layer on the buffer. The pattern is a self-assembled pattern.
|Large high-quality epitaxial wafers|
Large high-quality epitaxial wafers are disclosed. Embodiments of the invention provide silicon carbide epitaxial wafers with low basal plane dislocation (bpd) densities.
|Flexible semiconductor devices and methods of manufacturing the same|
A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer.
|Semiconductor device, method of manufacturing the same, and electronic apparatus|
A semiconductor device includes: a gate electrode; an organic semiconductor film forming a channel; and a pair of source-drain electrodes formed on the organic semiconductor film, the pair of source-drain electrodes each including a connection layer, a buffer layer, and a wiring layer that are laminated in order.. .
|Device with strained layer for quantum well confinement and method for manufacturing thereof|
The disclosed technology relates to transistors having a strained quantum well for carrier confinement, and a method for manufacturing thereof. In one aspect, a finfet or a planar fet device comprises a semiconductor substrate, a strain-relaxed buffer layer comprising ge formed on the semiconductor substrate, a channel layer formed on the strain-relaxed buffer layer, and a strained quantum barrier layer comprising sige interposed between and in contact with the strain-relaxed buffer layer and the channel layer.
|Photoelectric conversion element and solar cell|
A photoelectric conversion element of an embodiment includes: a light absorbing layer containing cu, at least one group iiib element selected from the group including al, in and ga, and s or se, and having a chalcopyrite structure; and a buffer layer formed from zn and o or s, in which the ratio s/(s+o) in the area extending in the buffer layer up to 10 nm from the interface between the light absorbing layer and the buffer layer, is equal to or greater than 0.7 and equal to or less than 1.0.. .
|Photoelectric conversion element and solar cell|
A photoelectric conversion element of an embodiment includes: a light absorbing layer containing copper (cu), at least one group iiib element selected from the group including aluminum (al), indium (in) and gallium (ga), and sulfur (s) or selenium (se), and having a chalcopyrite structure; and a buffer layer formed from zinc (zn) and oxygen (o) or sulfur (s), wherein the molar ratio represented by s/(s+o) of the buffer layer is equal to or greater than 0.7 and equal to or less than 1.0, and the crystal grain size is equal to or greater than 10 nm and equal to or less than 100 nm.. .
|Nonvolatile memory elements|
Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer.
|Preparation of hollow polymer microspheres|
The present invention of three-stage process relates to preparing hollow particles with a buffer layer, exhibiting integrity of particle structure and uniformity of particle size, used in plastic or paper coating, and showing superior characteristics of gloss, whiteness, high opacity, high printing color density and good water resistance.. .
|Device for assembling camera module with high quality|
A device for assembling a camera module includes a base and a buffer layer. The camera module includes a flexible printed circuit board (fpcb), a lens module positioned on the fpcb, and a stiffener adhering to the fpcb, opposite to the lens module.
|Semiconductor device including a buffer layer structure for reducing stress|
A semiconductor device includes a semiconductor chip, wiring that is included in the semiconductor chip and has a coupling part between parts with different widths, a pad being formed above the wiring and in a position overlapping the coupling part, a bump being formed on the pad, a buffer layer being formed in a position between the coupling part and the pad so as to cover the entire coupling part, and inorganic insulating layers being formed between the wiring and the buffer layer and between the buffer layer and the pad, respectively. The buffer layer is made of a material other than resin and softer than the inorganic insulating layer.
|Semiconductor stacked body, method for manufacturing same, and semiconductor element|
A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a ga203 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an ain buffer layer formed on the ga203 substrate, and a nitride semiconductor layer formed on the ain buffer layer.. .
|Semiconductor device and manufacturing method thereof|
A semiconductor device having a novel structure or a method for manufacturing the semiconductor device is provided. For example, the reliability of a transistor which is driven at high voltage or large current is improved.
|Adhesive tape and method for producing substrate using the same|
There are provided an adhesive tape and a method for producing a substrate using the same. The adhesive tape including: a reinforcement layer supporting the adhesive tape; a buffer layer formed on one surface of the reinforcement layer and performing a buffering operation; and an adhesive layer formed on one surface of the buffer layer..
|Solar cell and method of preparing the same|
A solar cell includes a substrate, a back electrode layer provided on the substrate, a light absorbing layer provided on the back electrode layer, a buffer layer including zns and provided on the light absorbing layer, and a window layer provided on the buffer layer.. .
|Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure|
A method of manufacturing a semiconductor device includes forming a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer.
|Method of fabrication of semiconductor device|
The invention relates to a method of fabricating a semiconductor device, the method including: providing a stacked semiconductor structure having a substrate, a buffer layer and one or more device layers; depositing a layer of alsb on one or more regions of the upper surface of the stacked structure; and oxidising the alsb layer in the presence of water to form a layer of aluminium oxide on the one or more regions of the upper surface. The semiconductor device is preferably a field effect transistor, and the method preferably includes the additional step of depositing source, drain and/or gate electrodes.
|Semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the semiconductor buffer structure|
A semiconductor buffer structure may include a silicon substrate and a buffer layer that is formed on the silicon substrate. The buffer layer may include a first layer, a second layer formed on the first layer, and a third layer formed on the second layer.
|Field effect transistor device|
A field effect transistor device is provided by the invention. The field effect transistor device includes: a substrate; a buffer layer, a channel layer, and a first barrier layer sequentially disposed on the substrate; a two-dimensional electron gas controlling layer disposed on the first barrier layer; a second barrier layer disposed on the two-dimensional electron gas controlling layer, wherein the second barrier layer has a recess passing through the second barrier layer; and a gate electrode filled into the recess and separated from the second barrier layer and the two-dimensional electron gas controlling layer by an insulating layer..
|Semiconductor light emtting device|
A semiconductor light emitting device includes a substrate, a buffer layer disposed on the substrate, the buffer layer comprising aluminum nitride, a composition grading layer disposed on the buffer layer, the composition grading layer comprising first aluminum nitride and second aluminum nitride, a capping layer disposed on the composition grading layer, and a cladding layer disposed on the capping layer. A composition of the first aluminum nitride and a composition of the second aluminum nitride change gradually in an alternating manner..
|Display apparatus and method of manufacturing the display apparatus|
A display apparatus includes a base substrate and a buffer layer disposed on the base substrate. The display apparatus further includes an oxide semiconductor layer disposed on the buffer layer and including a source electrode, a drain electrode, and a channel portion.
|Organic light emitting diode display|
An organic light emitting diode display according to an exemplary embodiment includes a substrate, a pixel electrode on the substrate, an organic emission layer on the pixel electrode, a common electrode on the organic emission layer, a cover layer on the common electrode, an oxidation reducing layer on the cover layer, and a thin film encapsulation layer covering the oxidation reducing layer, the oxidation reducing layer being configured to reduce oxidation of the common electrode, the oxidation reducing layer being separated from the common electrode. The oxidation reducing layer may include at least one of a dummy common electrode, an ultraviolet ray (uv) blocking layer, and a buffer layer..
A defence system 2, 60, 70, 100 comprising a net layer 4, 62, 72 and a buffer layer 6, 64, 74 wherein the buffer layer 6, 64, 74 is provided in front of the net layer 4, 62, 72.. .
|Doner substrates and methods of manufacturing organic light emitting display devices using donor substrates|
A donor substrate may include a base layer, a light to heat conversion layer disposed on the base layer, a buffer layer disposed on the light to heat conversion layer, an organic transfer layer disposed on the buffer layer, and a tightening member disposed on a peripheral portion of the organic transfer layer. The tightening member may include an adhesive film having an adhesion strength controlled by an irradiation of an ultraviolet ray.
|Thin film solar cells|
Embodiments relate to a method including forming a layer of copper zinc tin sulfide (czts) on a first layer of molybdenum (mo) and annealing the czts layer and the first mo layer to form a layer of molybdenum disulfide (mos2) between the layer of czts and the first layer of mo. The method includes forming a back contact on a first surface of the czts layer opposite the first mo layer and separating the first mo layer and the mos2 layer from the czts layer to expose a second surface of the czts layer opposite the first surface.
|Method of fabricating a lithography mask|
A method of fabricating an extreme ultraviolet (euv) mask is disclosed. The method includes providing a substrate, forming a reflective multilayer (ml) over the substrate, forming a buffer layer over the reflective ml, forming an absorption layer over the buffer layer and forming a capping layer over the absorption layer.
|Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same|
In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (mlc) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material.
|Thin film stack with surface-conditioning buffer layers and related methods|
This disclosure provides systems, methods and apparatus for a thin film stack with surface-conditioning buffer layers. In one aspect, the thin film stack includes a plurality of thin film layers each having a thickness greater than about 10 nm and a plurality of surface-conditioning buffer layers each having a thickness between about 1 nm and about 10 nm.
|Device and methods for small trench patterning|
A semiconductor device and methods for small trench patterning are disclosed. The device includes a plurality of gate structures and sidewall spacers, and an etch buffer layer disposed over the sidewall spacers.
|Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device|
A method for manufacturing a bipolar punch-through semiconductor device is disclosed, which includes providing a wafer having a first and a second side, wherein on the first side a high-doped layer of the first conductivity type having constant high doping concentration is arranged; epitaxially growing a low-doped layer of the first conductivity type on the first side; performing a diffusion step by which a diffused inter-space region is created at the inter-space of the layers; creating at least one layer of the second conductivity type on the first side; and reducing the wafer thickness within the high-doped layer on the second side so that a buffer layer is created, which can include the inter-space region and the remaining part of the high-doped layer, wherein the doping profile of the buffer layer decreases steadily from the doping concentration of the high-doped region to the doping concentration of the drift layer.. .
|Organic el element, organic el panel having organic el element, organic el light-emitting apparatus, and organic el display apparatus|
An organic el element includes: an anode; a cathode; a buffer layer; and a hole injection layer between the anode and the buffer layer, the hole injection layer including a nickel oxide including both nickel atoms with a valence of three and nickel atoms with a valence of two. In the hole injection layer, a ratio of the number of nickel atoms with a valence of three to the number of nickel atoms with a valence of two, expressed in percentage, is equal to or greater than 60%..
|Solar cell and method of fabricating the same|
Provided is a solar cell and a method of fabricating the same. The solar cell according to an embodiment includes a supporting substrate; a transparent electrode layer on the supporting substrate; a buffer layer on the transparent electrode layer; a light absorption layer on the buffer layer; a backside electrode layer on the light absorption layer; and a plurality of recesses formed on a top surface of the transparent electrode layer and having a first slope and a second slope..
|Thin film solar cells|
Embodiments relate to a solar cell apparatus including a molybdenum (mo) contact layer and an annealed absorber layer including zinc and sulfur directly adjacent to the mo contact layer. The apparatus has no molybdenum disulfide (mos2) layer located between the mo contact layer and the annealed absorber layer.
|Split-element optical hydrophone|
There is provided a solid seismic streamer cable for use in seismic surveying in marine environments. The streamer is characterised by a buffer layer 2 which is provided with a cut-out 50 and a sensor element arranged in the cut-out 50.
|Amorphous alloy spacer for perpendicular mtjs|
A perpendicular magnetic tunnel junction (mtj) apparatus includes a tunnel magnetoresistance (tmr) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers an amorphous alloy spacer is deposited between the tmr enhancement buffer layer and the reference layers to enhance tmr the amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the tmr enhancement buffer layer to ensure full perpendicular magnetization.. .
|Semiconductor optoelectronic structure with increased light extraction efficiency|
A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.. .
|Growing of gallium-nitrade layer on silicon substrate|
Embodiments relate to growing an epitaxy gallium-nitride (gan) layer on a porous silicon (si) substrate. The porous si substrate has a larger surface area compared to non-porous si substrate to distribute and accommodate stress caused by materials deposited on the substrate.
|Semiconductor laminate and process for production thereof, and semiconductor element|
A semiconductor laminate having small electric resistivity in the thickness direction; a process for producing the semiconductor laminate; and a semiconductor element equipped with the semiconductor laminate. Include a semiconductor laminate including a ga203 substrate; an algalnn buffer layer which is formed on the ga203 substrate; a nitride semiconductor layer which is formed on the algalnn buffer layer and contains si; and an si-rich region which is formed in an area located on the algalnn buffer layer side in the nitride semiconductor layer and has an si concentration of 5×1018/cm3 or more..
|Solar cell and manufacturing method thereof|
A solar cell according to an embodiment includes a substrate; a barrier layer of a nano rod structure on the substrate; a back electrode layer disposed on the barrier layer; a light absorbing layer disposed on the back electrode layer; a buffer layer disposed on the light absorbing layer, and a window layer disposed on the buffer layer.. .
|Solar cell and method for manufacturing the same|
Disclosed are a solar cell and a method for manufacturing the same. The solar cell includes a support substrate; a back electrode layer on the support substrate, the back electrode layer being formed with at least one first through hole to expose a part of a top surface of the support substrate; a light absorbing layer on the back electrode layer; a buffer layer on the light absorbing layer; a window layer on the buffer layer; and a high-resistance region on a lateral side of the back electrode layer forming the first through hole.
|High throughput epitaxial lift off for flexible electronics|
A method of removing a semiconductor device layer from an underlying base substrate is provided in which a sacrificial phosphide-containing layer is formed between a semiconductor device layer and a base substrate. In some embodiments, a semiconductor buffer layer can be formed on an upper surface of the base substrate prior to forming the sacrificial phosphide-buffer layer.
|Interface adhesion improvement method|
Embodiments of the invention provide methods of an interface adhesion improvement methods used on a transparent substrate for oled or thin film transistor applications. In one embodiment, a method of forming a buffer layer on a surface of a substrate includes providing a substrate having an planarization material disposed thereon in a processing chamber, supplying a buffer layer gas mixture including a silicon containing gas into the processing chamber, controlling a substrate temperature less than about 100 degrees celsius, forming a buffer layer on the planarization material, supplying an encapsulating barrier layer deposition gas mixture including a silicon containing gas and a nitrogen containing gas into the processing chamber, and forming an encapsulating barrier layer on the buffer layer..
|Method for manufacturing array substrate with embedded photovoltaic cell|
A method for manufacturing array substrate with embedded photovoltaic cell includes: providing a substrate; forming a buffer layer on the substrate; forming an amorphous silicon layer on the buffer layer; converting the amorphous silicon layer into a polysilicon layer; forming a pattern on the polysilicon layer; forming a first photoresist pattern on the polysilicon layer and injecting n+ ions; forming a gate insulation layer on the polysilicon layer; forming a second photoresist pattern on the gate insulation layer and injecting n− ions; forming a third photoresist pattern on the gate insulation layer and injecting p+ ions; forming a metal layer on the gate insulation layer so as to form a gate terminal; forming a hydrogenated insulation layer on the metal layer; forming a first ditch in the first insulation layer; and forming a second metal layer on the first insulation layer.. .
|Plastic fiber ribbon and cover removal method thereof|
A plastic fiber ribbon includes a plastic fiber, a buffer layer formed to surround an outer circumference of the plastic fiber, a spacer arranged substantially in parallel with the plastic fiber, and a cover part covering the plastic fiber, the buffer layer, and the spacer. A diameter l of the spacer is set to be larger than an inner diameter l1 of the buffer layer and smaller than an outer diameter l2 of the buffer layer, so that blades used to cut into the plastic fiber ribbon remain spaced from the plastic fiber by engaging the blades against the spacer..
|Nitride-based semiconductor device and manufacturing method thereof|
A nitride-based semiconductor device includes a buffer layer on a substrate, a nitride-based semiconductor layer on the buffer layer, at least one ion implanted layer within the nitride-based semiconductor layer, and a channel layer on the nitride-based semiconductor layer.. .
|Magnetic device and method of manufacturing the same|
A magnetic device comprises a memory cell comprising a magnetic resistance device and lower and upper electrodes with the magnetic resistance device interposed therebetween to apply current to the magnetic resistance device. The magnetic resistance device includes: a buffer layer for controlling a crystalline axis for inducing perpendicular magnetic anisotropy (pma) in the magnetic resistance device, the buffer layer being in contact with the lower electrode; a seed layer being in contact with the buffer layer and being oriented to a hexagonal close-packed lattice (hcp) (0001) crystal plane; and a perpendicularly magnetized pinned layer being in contact with the seed layer and having an l11 type ordered structure..
|Using amorphous zinc-tin oxide alloys in the emitter structure of cigs pv devices|
A device includes a back contact, an absorber layer coupled to the back contact, a buffer layer coupled to the absorber layer; and an amorphous transparent conductive layer coupled to the buffer layer, wherein the amorphous transparent conductive phase is characterized by, as a function of composition, i) a range of band gaps and ii) a range of work functions.. .
|Optical semiconductor device having ridge structure formed on active layer containing p-type region and its manufacture method|
A p-type cladding layer (3) of p-type semiconductor is formed over a substrate. An active layer (5) including a p-type semiconductor region is disposed over the p-type cladding layer.
|Nitride-based light-emitting device|
A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group iii element, and optionally, a second group iii element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.. .
|Method for making light emitting diode|
A method of making a led includes steps of providing a substrate having an epitaxial growth surface. A buffer layer and an intrinsic semiconductor layer are grown thereon in that order.
|Touch screen panels and methods of fabricating the same|
Provided are touch screen panels with improved transmittance and methods of fabricating the same. The method may include preparing a substrate including a cell region and an interconnection region provided around the cell region, sequentially forming a first buffer layer and a second buffer layer on the substrate, the second buffer layer having a refractive index less than that of the first buffer layer, and forming a transparent electrode on the second buffer layer.
|Compound semiconductor device, method for producing the same, power-supply unit, and high-frequency amplifier|
A compound semiconductor device includes: a compound semiconductor multilayer structure including a first buffer layer composed of aln; and a second buffer layer composed of algan and formed above the first buffer layer, wherein the second buffer layer contains carbon, and wherein the concentration of carbon in the second buffer layer increases with increasing distance from a lower surface of the second buffer layer toward an upper surface of the second buffer layer.. .
|Flat display device and method of manufacturing the same|
A flat display device includes a substrate, a light-emitting diode on the substrate, and a sealing layer on the light-emitting diode, the sealing layer including at least one sealing unit that includes an organic film, an oxygen-free buffer layer on the organic film, and an inorganic film on the oxygen-free buffer layer.. .
|Method of fabricating single-layer graphene|
A method of fabricating a single-layer graphene on a silicon carbide (sic) wafer includes forming a plurality of graphene layers on the sic wafer such that the plurality of graphene layers are on a buffer layer of the sic wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene.. .
High field-effect mobility of a transistor including an oxide semiconductor is achieved. Further, a highly reliable semiconductor device including the transistor is provided.
|Semiconductor light emitting device with doped buffer layer and method of manufacturing the same|
According to example embodiments, a semiconductor light emitting device including a doped buffer layer includes a substrate and a buffer layer on the substrate. The doping layer may include aluminum nitride (aln) and the buffer layer may include a doping layer.
|Method for producing gallium nitride layer and seed crystal substrate used in same|
A gallium nitride layer is produced using a seed crystal substrate by flux method. The seed crystal substrate 8a includes a supporting body 1, a plurality of seed crystal layers 4a each comprising gallium nitride single crystal and separated from one another, a low temperature buffer layer 2 provided between the seed crystal layers 4a and the supporting body and made of a nitride of a group iii metal element, and an exposed layer 3 exposed to spaces between the adjacent seed crystal layers 4a and made of aluminum nitride single crystal or aluminum gallium nitride single crystal.