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Bismuth patents



      
           
This page is updated frequently with new Bismuth-related patent applications. Subscribe to the Bismuth RSS feed to automatically get the update: related Bismuth RSS feeds. RSS updates for this page: Bismuth RSS RSS


Reflective optical limiter

Liquid-ejecting head and liquid-ejecting apparatus

High zt bismuth-doped perovskite thermoelectrics

Date/App# patent app List of recent Bismuth-related patents
08/28/14
20140243185
 Method and apparatus for manufacturing a low melting point nano glass powder patent thumbnailnew patent Method and apparatus for manufacturing a low melting point nano glass powder
Disclosed is a method for manufacturing a low melting point nano glass powder. The method includes the steps of: preparing a bismuth-based low melting point glass powder precursor of a micro size, having bismuth (bi) as the main ingredient; injecting the glass powder precursor into a reaction chamber of a plasma treatment device; applying thermal plasma via a direct current power source to the glass powder precursor injected into the reaction chamber, to vaporize the glass powder precursor; and generating nano glass powder having a nano size by quenching the gas generated by vaporizing the glass powder precursor..
08/21/14
20140233085
 Reflective optical limiter patent thumbnailReflective optical limiter
An optical limiter comprises a glass backing, a glass cover, and a layer of a phase changing material placed between said glass backing and said glass cover, the phase changing material comprising a transparent matrix having embedded particles of material that changes its optical properties due to temperature induced phase change of said material. The optical properties may change from transparent to reflective, from transparent to refractive or from transparent to scattering.
08/21/14
20140232794
 Liquid-ejecting head and liquid-ejecting apparatus patent thumbnailLiquid-ejecting head and liquid-ejecting apparatus
A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening and includes a piezoelectric element including a piezoelectric layer and electrodes. The piezoelectric layer contains bismuth sodium potassium titanate and satisfies the inequality 0≦pr/pm≦0.25 at 25° c., where pm and pr are the saturation polarization and remanent polarization, respectively, of the piezoelectric layer..
08/21/14
20140231696
 High zt bismuth-doped perovskite thermoelectrics patent thumbnailHigh zt bismuth-doped perovskite thermoelectrics
A bismuth-doped perovskite thermoelectric, comprising (bix, la0.1-x)srtio3, wherein x is between 0.01 and 0.1, can have a high figure-of-merit, zt.. .
08/14/14
20140228527
 Solution phase processing of polyarylene sulfide patent thumbnailSolution phase processing of polyarylene sulfide
Provided are methods for obtaining modified polyarylene sulfide compositions having improved thermal and thermo-oxidative stability, the compositions so obtained, and articles comprising the compositions. The method comprises the steps of contacting, in the presence of a suitable solvent, a polyarylene sulfide with at least one reducing agent and at least base to form a first mixture.
08/14/14
20140227592
 Zinc anode alkaline electrochemical cells containing bismuth patent thumbnailZinc anode alkaline electrochemical cells containing bismuth
A negative electrode active material for a zinc anode alkaline electrochemical cell includes (i) particles, comprising bismuth, and (ii) powder, comprising zinc. The particles have an average particle size of at most 135 nm..
08/14/14
20140227534
 Method for forming coating film and coated article patent thumbnailMethod for forming coating film and coated article
An object of the present invention is to provide a method for forming a multilayer coating film, the method making it possible to obtain, with excellent curability at low temperatures and in a short period of time, a multilayer coating film exhibiting an excellent finished appearance. The present invention provides a method for forming a multilayer coating film, wherein a substrate is sequentially coated with at least one layer of one or more base coating compositions, and with one or more clear coating compositions, the method being characterized by utilizing a clear coating composition containing a hydroxy-containing acrylic resin (a) having a hydroxy value in a specific range; a polyisocyanate compound (b) having a viscosity in a specific range; and an organometallic catalyst (c) containing a metallic compound (c1) in which the metal is a member selected from the group consisting of zinc, tin, zirconium, bismuth, lead, cobalt, manganese, titanium, aluminum, and molybdenum, and an amidine compound (c2)..
08/14/14
20140226774
 Production of actinium-227 and thorium-228 from radium-226 to supply alpha-emitting isotopes radium-223, thorium-227, radium-224, bismuth-212 patent thumbnailProduction of actinium-227 and thorium-228 from radium-226 to supply alpha-emitting isotopes radium-223, thorium-227, radium-224, bismuth-212
An actinium-227 production device having a plurality of metallic or ceramic caplets, each enclosing a radium-226 compound in redundantly nested sealed cylinders. The radium-226 compound is compacted into a disk and diluted with heat transporting ceramic materials.
08/07/14
20140218023
 Nmr flowmeter with superconducting polarizer patent thumbnailNmr flowmeter with superconducting polarizer
A fluid flowmeter which uses nuclear magnetic resonance to determine quantities of flowing fluid(s) has a polarizing magnet system with magnets which are high temperature superconductors such as yttrium barium copper oxide (ybco) or bismuth strontium calcium copper oxide (bscco) which are superconducting at liquid nitrogen temperature and provide a greater magnetic field strength than conventional magnets. This may allow the flowmeter to accept higher through flow rate and/or may allow observation of 23na in an aqueous phase as well as 1h..
07/31/14
20140210086
 Semiconductor device and method of manufacturing the semiconductor device patent thumbnailSemiconductor device and method of manufacturing the semiconductor device
A method of manufacturing a semiconductor device includes forming a barrier metal film on a surface of at least one of a first electrode of a wiring board and a second electrode of a semiconductor element, providing a connection terminal between the first and second electrodes, the connection terminal being made of solder containing tin, bismuth and zinc, and bonding the connection terminal to the barrier metal film by heating the connection terminal and maintaining the temperature of the connection terminal at a constant temperature not lower than a melting point of the solder for a certain period of time.. .
07/31/14
20140209140
Stacked thermoelectric conversion module
A stacked thermoelectric conversion module has a structure in which the following are stacked: a module for use in a high-temperature portion which is a thermoelectric conversion module in which a metal oxide is used as each thermoelectric conversion material or a thermoelectric conversion module in which a silicon-based alloy is used as each thermoelectric conversion material; and a module for use in a low-temperature portion which is a thermoelectric conversion module in which a bismuth-tellurium-based alloy is used as each thermoelectric conversion material. The stacked thermoelectric conversion module disposes a flexible heat-transfer material and, if necessary, a metal sheet between the module for use in a high-temperature portion and the module for use in a low-temperature portion.
07/24/14
20140205682
Method based on bismuth ion for the treatment and prevention of a disease caused by a shiga toxin
The present invention relates to the a bismuth-based composition, particularly involving the use of bismuth ions, particularly the bi+3 ion, for prevention and/or treatment of the haemolytic uremic syndrome, with the invention also relating to the use of a bismuth ion in the manufacture of a medicament for the prevention and/or treatment of an infection caused by a shiga-toxin producing escherichia coli strain, as well as to a method for preventing and/or treating the haemolytic uremic syndrome comprising administering bismuth ions to a patient in need thereof, and a method for inhibiting dissemination of the gene encoding virulence factors of a shiga-toxin producing escherichia coli strain in animals and humans.. .
07/24/14
20140203211
Scintillator
An afterglow property of cesium iodide: thallium (csi:tl), in which csi is a host material and doped with thallium, is improved. It is possible to improve the afterglow property of a scintillator by doping a crystal material including csi (cesium iodide), as a host material, and thallium (tl), as a luminescent center, with bismuth (bi)..
07/17/14
20140200305
Coating composition and coated article
An object of the present invention is to provide a coating composition that has excellent curability at low temperatures and in a short period of time, and that also has satisfactory pot life (usable life) and makes it possible to obtain a cured coating film with an excellent finished appearance. The present invention provides a coating composition comprising a secondary hydroxy-containing acrylic resin (a), which is a copolymer of monomer components comprising 20 to 50% by mass of secondary hydroxy-containing polymerizable unsaturated monomer (a) and 50 to 80% by mass of at least one other polymerizable unsaturated monomer (b); a polyisocyanate compound (b); and an organometallic catalyst (c) containing a metallic compound (c1) in which the metal is a member selected from the group consisting of zinc, tin, zirconium, bismuth, lead, cobalt, manganese, titanium, aluminum and molybdenum, and an amidine compound (c2)..
07/17/14
20140196781
Method of manufacturing thick-film electrode
A method of manufacturing a thick-film electrode comprising steps of: (a) applying a conductive paste onto a substrate comprising, (i) 100 parts by weight of a conductive powder, wherein the conductive powder is 16 to 49 weight percent based on the weight of the conductive paste; (ii) 0.5 to 10 parts by weight of a metal additive comprising bismuth (bi); (iii) 1 to 25 parts by weight of a glass frit; and (iv) 50 to 300 parts by weight of an organic medium; and (b) firing the applied conductive paste to form the thick-film electrode, wherein thickness of the thick-film electrode is 0.5 to 15 μm.. .
07/17/14
20140196274
Thermoelectric evaluation and manufacturing methods
A means for determining the electrical resistance and resistivity of thermoelectric material allows quality control at all steps in the construction of a bismuth telluride and antimony telluride thermoelectric generator. The method involves measuring negative thermoelectric voltage with no current flowing and then a measure of negative thermoelectric voltage while forcing known current through the material in the same direction as shorted to accurately determine thermoelectric resistance.
07/10/14
20140194733
Bismuth particle x-ray contrast agents
Radiopaque bismuth particles and methods of making and using the radiopaque bismuth particles are disclosed. The radiopaque bismuth particles include an elemental bismuth core and an outer coating comprising one or more coating agents.
07/03/14
20140186711
Alkaline secondary battery
In an alkaline secondary battery including a gelled negative electrode containing zinc alloy powder, an aspect ratio of a particle of the zinc alloy powder is within a range of 2.0-2.4, and the zinc alloy contains 150-350 ppm of bismuth, and 600-1500 ppm of indium.. .
06/26/14
20140178290
Bismuth iron oxide powder, manufacturing method for the bismuth iron oxide powder, dielectric ceramics, piezoelectric element, liquid discharge head, and ultrasonic motor
Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (a) grains including a bismuth iron oxide having a perovskite-type crystal structure; (b) grains including a bismuth iron oxide having a crystal structure classified to a space group pbam; and (c) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group i23.
06/26/14
20140175340
Glass frit, composition for solar cell electrodes including the same, and electrode fabricated using the same
A glass frit includes at least three metal oxides selected from the group of lead oxide, silicon oxide, tellurium oxide, bismuth oxide, zinc oxide, and tungsten oxide, wherein the glass frit exhibits a phase transition peak in the range of about 300° c. To about 600° c.
06/26/14
20140175327
Effective substitutions for rare earth metals in compositions and materials for electronic applications
Embodiments disclosed herein include methods of modifying synthetic garnets used in rf applications to reduce or eliminate yttrium or other rare earth metals in the garnets without adversely affecting the magnetic properties of the material. Some embodiments include substituting bismuth for some of the yttrium on the dodecahedral sites and introducing one or more high valency ions to the octahedral and tetrahedral sites.
06/26/14
20140174952
Potentiometric device and method selective for pioglitazone
The potentiometric device and method selective for pioglitazone relates to the detection of pioglitazone in urine, in other liquid biological samples, and in pharmaceutical preparations for quality control testing and the like, and particularly to the use of a potentiometric sensor for potentiometric detection and measurement of the concentration of pioglitazone. The potentiometric sensor includes a plasticized polyvinyl chloride (pvc) matrix membrane having an ionophore impregnated or embedded therein.
06/26/14
20140174527
Photovoltaic devices with base metal buss bars
A photovoltaic cell such as a solar cell is disclosed. The cell comprises (a) a semiconductor substrate having a front surface, (b) one or more anti-reflection coating layers on the front surface of the semiconductor substrate, (c) a plurality of silver-containing fingers in contact with the one or more anti-reflection coating layers and in electrical contact with the semiconductor substrate; and (d) one or more base metal containing buss bars each in contact with the one or more anti-reflection coating layers and the silver-containing fingers.
06/19/14
20140171547
Bismuth containing complex and condensation reaction curable compositions and methods for the preparation and use of the compositions
A composition is capable of curing via condensation reaction. The composition uses a new condensation reaction catalyst.
06/19/14
20140171525
Polyurethane foam premixes containing halogenated olefin blowing agents and foams made from same
Disclosed are polyol premix compositions, and foams formed therefrom, which comprise a combination of a hydrohaloolefin blowing agent, a polyol, a silicone surfactant, and a catalyst system that includes a bismuth-based metal catalyst. Such catalysts may be used alone or in combination with an amine catalyst and/or other non-amine catalysts..
06/19/14
20140171303
Oxide catalyst
An oxide catalyst for use in an oxidation reaction of an olefin and/or an alcohol, the oxide catalyst comprising: the oxide catalyst contains molybdenum, bismuth, iron, cobalt, and cerium; an atomic ratio a of bismuth to 12 atoms of molybdenum is 2≦a≦6, an atomic ratio b of iron to 12 atoms of molybdenum is 2.5<b≦5, an atomic ratio c of cobalt to 12 atoms of molybdenum is 2≦c≦8, an atomic ratio d of cerium to 12 atoms of molybdenum is 0.5≦d≦6, and an atomic ratio of iron/cobalt is 0.4≦b/c≦2.5; wherein when a spacing d of a complex oxide of cerium and molybdenum showing a peak at 33.50° in a x-ray diffraction is taken as a reference, a change rate of d is 5000 to 9000 ppm.. .
06/19/14
20140170481
Lithium ion battery
It is an object of this exemplary embodiment to provide a lithium ion battery using a lithium manganese complex oxide, in which the dissolution of manganese and resistance increase are inhibited, and which is excellent in life characteristics at high temperature. One aspect of this exemplary embodiment is a lithium ion battery comprising at least a positive electrode comprising a positive electrode active material, and an electrolytic solution, wherein the positive electrode active material is a lithium manganese complex oxide, the positive electrode comprises a bismuth oxide, and a metal compound attached to part of a surface of the lithium manganese complex oxide, and a dissolution rate of a metal of the metal compound in the electrolytic solution is lower than a dissolution rate of manganese of the lithium manganese complex oxide..
06/12/14
20140163714
Thermoelectric evaluation and manufacturing methods
A means for determining the electrical resistance and resistivity of thermoelectric material allows quality control at all steps in the construction of a bismuth telluride and antimony telluride thermoelectric generator. The method involves measuring negative thermoelectric voltage with no current flowing and then a measure of negative thermoelectric voltage while forcing known current through the material in the same direction as shorted to accurately determine thermoelectric resistance.
06/12/14
20140157586
Pasted zinc electrode for rechargeable nickel-zinc batteries
Active material for a negative electrode of a rechargeable zinc alkaline electrochemical cell is made with zinc metal particles coated with tin and/or lead. The zinc particles may be coated by adding lead and tin salts to a slurry containing zinc particles, a thickening agent and water.
06/05/14
20140151584
Nuclear radiation shields, shielding systems and associated methods
A radiation shield, which may attenuate nuclear radiation or ionizing particles, may include a non-toxic, radioactivity-attenuating material based on an element or an elemental species having an atomic number of 56 or more. Examples of such materials include barium sulfate and bismuth oxide.
05/29/14
20140146111
Liquid ejection head
A liquid ejection head, comprises a pressure generation chamber communicating with a nozzle opening and a piezoelectric element having a piezoelectric layer and an electrodes. The piezoelectric layer is a perovskite type complex oxide containing bismuth, iron, and cerium.
05/29/14
20140145097
Radiation shields and methods of making the same
Various non-limiting embodiments disclosed herein generally relate to metallurgically dense radiation shields formed from bismuth alloys comprising from 10 weight percent to 60 weight percent tin that are essentially free of toxic heavy metals chosen from lead, cadmium, and uranium; and radiation attenuation devices comprising the same. Other non-limiting embodiments disclosed herein relate to methods of making metallurgically dense radiation shields comprising bismuth alloys comprising from 10 weight percent to 60 weight percent tin.
05/22/14
20140138253
Composition and method for the deposition of conductive polymers on dielectric substrates
The invention relates to a composition and a process for the deposition of conductive polymers on dielectric substrates. In particular, the invention relates to a composition for the formation of electrically conductive polymers on the surface of a dielectric substrate, the composition comprising at least one polymerizable monomer which is capable to form a conductive polymer, an emulsifier and an acid, characterized in that the composition comprises at least one metal-ion selected from the group consisting of lithium-ions, sodium-ions, aluminum-ions, beryllium-ions, bismuth-ions, boron-ions, indium-ions and alkyl imidazolium-ions..
05/22/14
20140137917
Thermoelectric module with bi-tapered thermoelectric pins
The thermoelectric module with bi-tapered thermoelectric pins is a semiconductor device configured as a thermoelectric power generator that has pins made of bismuth telluride that attach to a ceramic hot plate and a ceramic cold plate to form a thermoelectric module (tem). The pins will include at least one n-doped pin and one p-doped pin.
05/15/14
20140130698
Ecological ammunition
The present invention relates to a composite material for the production of ecological ammunition characterized in that it comprises a) a metal matrix formed by a zinc and bismuth alloy, zinc and aluminum alloy, tin and bismuth alloy or zinc and tin alloy and a metal selected from aluminum, bismuth and the combination thereof and b) reinforcing metal particles distributed therein selected from wolframium, ferro-wolframium, ferro-wolframium carbides, wolframium carbides, wolframium oxides and ferro-wolframium oxides, subjected to oxidation before being added to the metal matrix.. .
05/08/14
20140127468
Optical information recording medium and method for manufacturing same
An optical information recording medium includes a recording film, which contains germanium, bismuth, and at least 50 at % tellurium, and has a first recording film component formed in the planar direction and having a bismuth content of at least 15 at %, a second recording film component formed in the planar direction on the side to be irradiated with a light beam and having a bismuth content that is at least 10 at % lower than that of the first recording film component, and an intermediate recording film component provided between the first and second recording film component to moderate the change in the bismuth content in the film thickness direction between the first and second recording film component, and having a bismuth content greater than the bismuth content of the second recording film component and less than the bismuth content of the first recording film component.. .
05/08/14
20140126866
D1378 ca radiation curable primary coating for optical fiber
A photoinitiator; an antioxidant; and an adhesion promoter; wherein said oligomer is the reaction product of: a hydroxyethyl acrylate; an aromatic isocyanate; an aliphatic isocyanate; a polyol; a catalyst; and an inhibitor, wherein said catalyst is an organo bismuth catalyst; wherein said oligomer has a number average molecular weight of from at least about 4000 g/mol to less than or equal to about 15,000 g/mol; and wherein a cured film of said radiation curable coating composition has a peak tan delta tg of from about −25° c. To about −45° c.; and a modulus of from about 0.50 mpa to about 1.2 mpa..
05/01/14
20140121403
Integrated process for the production of acrylic acids and acrylates
A process for producing an acrylate product from methanol and acetic acid, in which, in a reaction zone a, the methanol is partially oxidized to formaldehyde in a catalyzed gas phase reaction, the product gas mixture a obtained and an acetic acid source are combined to form a reaction gas input mixture b which comprises acetic acid in excess over formaldehyde, and the formaldehyde in reaction gas input mixture b is aldol-condensed to acrylic acid in the presence of a catalyst in a reaction zone b to form an acrylic acid-containing product gas mixture b from which an acrylate product stream may be separated. Suitable aldol condensation catalysts include vanadium-bismuth, vanadium-titanium-bismuth, vanadium-bismuth-tungsten, vanadium-titanium-tungsten, vanadium-titanium and vanadium-tungsten..
05/01/14
20140120278
Color-strikable glass containers
Latent colorant material compositions, soda-lime-silica glass compositions, and related methods of manufacturing color-strikable glass containers. The latent colorant material compositions may be introduced into a plurality of base glass compositions having redox numbers in the range of −40 to +20 to produce color-strikable glass compositions and color-strikable glass containers.
05/01/14
20140120032
Piezoceramic lead-free material
The invention relates to a piezoelectric lead-free material based on bismuth sodium titanate, to a method for the production thereof, and to the use thereof.. .
05/01/14
20140119981
Constructing bismuth antimony thin films with anisotropic single-dirac cones
A bi1-xsbx thin film is provided that includes a dirac-cone with different degrees of anisotropy in their electronic band structure by controlling the stoichiometry, film thickness, and growth orientation of the thin film, so as to result in a consistent inverse-effective mass tensor including non-parabolic or linear dispersion relations.. .
05/01/14
20140117848
Electrodeless lamp
An electrodeless discharge lamp suitable for the use in solar simulators, with an emission spectrum following, as much as possible, the am1.5g standard. According to a preferred embodiment the lamp has a quartz bulb is filled with a composition comprising an inert gas, for example n2, he, ne, ar, kr, xe or a mixture thereof, and a first and a second active components, the first active component being an antimony or bismuth halide or a mixture of antimony halides; while the second component is sni2 a mixture of halides of: in, sn, ag, bi, cu.
05/01/14
20140117240
Inspectable black glass containers
A soda-lime-silica glass container and related methods of manufacturing. A black-strikable glass composition having a base glass portion and a latent colorant portion is prepared.
04/24/14
20140112821
Lead-free brass alloy for hot working
Provided is a lead-free brass alloy for hot working provided with good hot-working properties and mechanical characteristics. A lead-free brass alloy for hot working, comprising: 28.0 to 35.0 wt % zinc, 0.5 to 2.0 wt % silicon, 0.5 to 1.5 wt % tin, 0.5 to 1.5 wt % bismuth, 0.10 wt % or less lead, and the remainder being copper and unavoidable impurities, the zinc equivalent being in a range of 40.0 to 43.0, and the area ratio of the κ phase after hot working being 20% or less..
04/24/14
20140110153
Wiring board and method for manufacturing the same
A wiring board includes an insulating resin layer, wirings, and a via-hole conductor. The wirings are disposed through the insulating resin layer therebetween and formed of copper foils.
04/10/14
20140097134
Solution phase processing of polyarylene sulfide
Provided are methods for obtaining modified polyarylene sulfide compositions having improved thermal and thermo-oxidative stability, the compositions so obtained, and articles comprising the compositions. The method comprises the steps of contacting, in the presence of a suitable solvent, a polyarylene sulfide with at least one reducing agent and at least base to form a first mixture.
04/03/14
20140094394
High density weight materials for oil field servicing operations
A wellbore treatment fluid comprising one or more high-density weighting materials selected from the group consisting of tungsten-containing materials, bismuth-containing materials, and tin-containing materials.. .
04/03/14
20140092176
Liquid ejection head, liquid ejection device
A liquid ejection head including a piezoelectric element having a piezoelectric layer and electrodes the piezoelectric layer is 3 μm or less in thickness. The piezoelectric layer is made of a piezoelectric material including bismuth manganate ferrate and barium titanate.
04/03/14
20140090977
Lead-free oxygen sensor
An electrochemical sensor cell is disclosed. The cell comprised of a diffusion membrane, a cathode, an anode, an electrolyte, electronic circuit board with electronic leads contained in housing.
04/03/14
20140090714
Lead-free high temperature/pressure piping components and methods of use
A piping component for controlling the flow of high-temperature fluids that includes a piping body having an inlet end and an outlet end, including methods of operating such components within a piping system. The piping body may be sized for fluids operating at temperatures from approximately 350° f.
03/27/14
20140087117
Polyphenylene sulfide compositions
Provided are polyphenylene sulfide compositions having improved thermo-oxidative stability, methods for obtaining them, and articles comprising the compositions. The compositions comprise polyphenylene sulfide and a bismuth additive.
03/06/14
20140062263
Piezoelectric actuator unit
A piezoelectric actuator unit includes a plurality of laminated piezoelectric elements, a first external electrode positioned on a first side surface of each piezoelectric element, and a conductive member connected to each first external electrode with a solder including indium, bismuth, or a mixture thereof, and some of the indium and/or bismuth in the solder is diffused into the soldered portions of the conductive member.. .
03/06/14
20140060252
Method of producing tin emitted low alpha radiation by using vacuum refining
A method of producing a purified tin, which emits low alpha radiation by using a vacuum refining has developed: the steps are comprising: preparing a crude tin; containing the crude tin in a crucible and placing it in a vacuum furnace; and removing the impurities, which have higher vapor pressures and low boiling points than that of the tin from the vacuum furnace. The impurities, such as a lead and bismuth can be removed as much as possible by utilizing the difference of the vapor pressure of the elements in the tin.
02/27/14
20140057112
Copper containing infrared reflective pigment compositions
Pigment compositions are described that advantageously increase total solar reflectance. Also described are methods of making pigment compositions.
02/27/14
20140055531
Liquid ejecting head and liquid ejecting apparatus
A liquid ejecting head includes a plate which is composed of a material containing silicon, a titanium oxide layer which is disposed above the plate, a bismuth-containing layer which is disposed above the titanium oxide layer and contains bismuth, a first electrode which is disposed above the bismuth-containing layer and composed of platinum, a piezoelectric layer which is disposed above the first electrode and composed of a piezoelectric material containing at least bismuth, and a second electrode which is disposed above the piezoelectric layer.. .
02/27/14
20140054589
Bismuth-doped semi-insulating group iii nitride wafer and its production method
The present invention discloses a semi-insulating wafer of gaxalyin1-x-yn (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more.
02/06/14
20140037568
Hair care composition comprising pyrithione and a pearliser system based on bismuth oxychloride
Hair care composition comprising a metal pyrithione and a pearliser system characterized by a bismuth oxychloride component.. .
01/30/14
20140031198
Process for preparing olefins from synthesis gas using a cobalt and manganese containing catalyst
The invention relates to a process for preparing a supported catalyst, wherein the catalyst contains cobalt, manganese and a third element selected from the group consisting of aluminium, gallium, indium, thallium, tin, lead and bismuth, and is prepared by co-precipitation of a manganese salt and a cobalt salt on a support, followed by impregnation with a salt of the third element. Further, the invention relates to the catalyst so obtained..
01/23/14
20140024525
Catalyst, method of manufacture and use thereof
A catalyst is provided, the catalyst comprising rods having mean length of 100 microns or less, the rods comprising a metal molybdate or tungstate, the metal being selected from the group consisting of iron, manganese, nickel, chromium, vanadium, aluminium, silver, titanium, copper, bismuth, and cobalt. A method of making such a catalyst is also provided..
01/23/14
20140021059
System and process for making formic acid
Methods and systems for electrochemical production of formic acid are disclosed. A method may include, but is not limited to, steps (a) to (d).


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Bismuth topics: Sulfuric Acid, Lead Dioxide, Piezoelectric, Perovskite, Semiconductor Devices, Semiconductor, Semiconductor Device, Conversion Efficiency, Hydrogenation, Fixed Bed Reactor, Fixed Bed Reactors, Zinc Oxide, Antimony Trioxide, Electrolyte, Hydrogen Peroxide

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