|| List of recent Bipolar-related patents
| Circuit and method for sensing temperature|
The present invention relates to a circuit and a method for sensing a temperature. In accordance with an embodiment of the present invention, a circuit for sensing a temperature including: a bipolar transistor unit connected to a current source to output an output voltage which is inversely proportional to temperature; a variable reference voltage unit for providing a variable reference voltage which varies according to setting; a first amplifying unit for receiving the output voltage of the bipolar transistor unit and the variable reference voltage and performing differential amplification to output the amplified voltage; and a second amplifying unit for variably amplifying a variation of the output voltage of the first amplifying unit using a feedback variable resistor is provided.
| Electrosurgical scissors|
Embodiments are directed to various monopolar and bipolar electrosurgical scissor instruments. A monopolar electrosurgical scissor instrument includes one scissor blade that has an electrically conductive tapered edge, where the tapered edge is insufficiently sharp to shear or otherwise mechanically cut tissue.
| Semiconductor element and operating method thereof|
A semiconductor element and an operating method thereof are provided. The semiconductor element comprises a first metal oxide semiconductor (mos) and a second mos.
| Diode substitute with low drop and minimal loading|
A voltage rectifier circuit having a storage element and a switching stage that is switchable to enable the storage element to capture a peak voltage of an alternating power source. The switching stage includes transistors arranged in a back-to-back configuration.
| Bipolar magnetic junction transistor with magnetoamplification and applications of same|
In one aspect of the present invention, the semiconductor device is a bipolar magnetic junction transistor (mjt), and includes a first non-magnetic semiconductor layer, a second non-magnetic semiconductor layer, and a magnetic semiconductor layer. The first non-magnetic semiconductor layer has majority charge carriers of a first polarity.
| A bipolar semiconductor component with a fully depletable channel zone|
A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.. .
| Low voltage protection devices for precision transceivers and methods of forming the same|
A bi-directional protection device includes a bi-directional npn bipolar transistor including an emitter/collector formed from a first n-well region, a base formed from a p-well region, and a collector/emitter formed from a second n-well region. P-type active regions are formed in the first and second n-well regions to form a pnpnp structure, which is isolated from the substrate using dual-tub isolation consisting of an n-type tub and a p-type tub.
| Epitaxial base layers for heterojunction bipolar transistors|
An exemplary embodiment of the present invention provides a heterojunction bipolar transistor comprising an emitter, a collector, and a base. The base can be disposed substantially between the emitter and collector.
| Phemt hbt integrated epitaxial structure and a fabrication method thereof|
An improved pseudomorphic high electron mobility transistor (phemt) and heterojunction bipolar transistor (hbt) integrated epitaxial structure and the fabrication method thereof, in which the structure comprises a substrate, a phemt structure, an etching-stop spacer layer, and an hbt structure. The phemt's structure comprises a buffer layer, a barrier layer, a first channel spacer layer, a channel layer, a second channel spacer layer, a schottky barrier layer, an etching-stop layer, and at least one cap layer.
| Fully isolated ligbt and methods for forming the same|
A device includes a dielectric layer, and a heavily doped semiconductor layer over the dielectric layer. The heavily doped semiconductor layer is of a first conductivity type.
| Electroluminescent organic transistor|
The present invention relates to a field effect electroluminescent ambipolar organic transistor in which there are two couples of control electrodes, a layer of ambipolar organic semiconductor in direct contact with the source and the drain electrode and two separate dielectric layers, and wherein said dielectric layers are each arranged between the ambipolar organic semiconductor layer and a couple of control electrodes.. .
|New uses for amino acid anticonvulsants|
For treating pain, in particular neuropathic pain, bipolar disease and migraine headaches.. .
|Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode|
In a method of manufacturing a semiconductor device, a semiconductor substrate of a first conductivity type having first and second surfaces is prepared. Second conductivity type impurities for forming a collector layer are implanted to the second surface using a mask that has an opening at a portion where the collector layer will be formed.
|Bipolar resistive-switching memory with a single diode per memory cell|
According to various embodiments, a resistive-switching memory element and memory element array that uses a bipolar switching includes a select element comprising only a single diode that is not a zener diode. The resistive-switching memory elements described herein can switch even when a switching voltage less than the breakdown voltage of the diode is applied in the reverse-bias direction of the diode.
|Metal silicide self-aligned sige heterojunction bipolar transistor and method of forming the same|
The present invention discloses a metal silicide self-aligned sige heterojunction bipolar transistor, which is designed to overcome the shortcomings such as the large base resistance rb of the prior art products. The metal silicide self-aligned sige heterojunction bipolar transistor of the present invention mainly comprises an si collector region, a local dielectric region, a base region, a base-region low-resistance metal silicide layer, a polysilicon emitter region, an emitter-base spacer dielectric region composed of a liner silicon oxide layer and a silicon nitride inner sidewall, a monocrystalline emitter region, a contact hole dielectric layer, an emitter metal electrode and a base metal electrode.
A layer in which the potential level difference normally unrequired for device operation is generated is positively inserted in a device structure. The potential level difference has such a function that even if a semiconductor having a small bandgap is exposed on a mesa side surface, a potential drop amount of the portion is suppressed, and a leakage current inconvenient for device operation can be reduced.
|Silicon carbide bipolar junction transistor comprising shielding regions and methods of manufacturing the same|
A silicon carbide (sic) bipolar junction transistor (bjt) and a method of manufacturing such a sic bjt is provided. The sic bjt can include a collector region having a first conductivity type, a base region having a second conductivity type opposite the first conductivity type, and an emitter region having the first conductivity type, the collector region, the base region and the emitter region being arranged as a stack.
|Heterojunction bipolar transistors with thin epitaxial contacts|
Heterojunction bipolar transistors are provided that include at least one contact (e.g., collector, and/or emitter, and/or base) formed by a heterojunction between a crystalline semiconductor material and a doped non-crystalline semiconductor material layer. A highly doped epitaxial semiconductor layer comprising a highly doped hydrogenated crystalline semiconductor material layer portion is present at the heterojunction between the crystalline semiconductor material and the doped non-crystalline semiconductor material layer.
|Heterojunction bipolar transistors with intrinsic interlayers|
Heterojunction bipolar transistors are provided that include at least one contact (e.g., collector, emitter, and/or base) formed by a heterojunction between a crystalline semiconductor material and a doped non-crystalline semiconductor material layer. An interfacial intrinsic non-crystalline semiconductor material layer is present at the heterojunction between the crystalline semiconductor material and the doped non-crystalline semiconductor material layer.
|Ambipolar silicon nanowire field effect transistor|
This invention describes a novel electronic device consisting of one—or more—vertically stacked gate-all-around silicon nanowire field effect transistor (snwfet) with two independent gate electrodes. One of the two gate electrodes, acting on the central section of the transistor channel, controls on/off behavior of the channel.
|Bipolar multistate nonvolatile memory|
Embodiments generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching capacity by using multiple layers of variable resistance layers. In one embodiment, the resistive switching element comprises at least three layers of variable resistance materials to increase the number of logic states.
|Learning method of neural network circuit|
A neuron circuit in a neural network circuit element includes a waveform generating circuit for generating a bipolar sawtooth pulse voltage, and a first input signal has a bipolar sawtooth pulse waveform. For a period during which the first input signal is permitted to be input to a first electrode of a variable resistance element, the bipolar sawtooth pulse voltage generated within the neural network circuit element including the variable resistance element which is applied with the first input signal from another neural network circuit element is input to a control electrode of the variable resistance element.
|Lead-acid battery with high specific power and specific energy|
The present disclosure includes a lead-acid battery having higher specific power and specific energy than prior known lead-acid batteries. A lead-acid electrochemical storage device is provided, comprising a specific power of between about 650 and about 3,050 watts/kilogram; and a specific energy of between about 10 and about 80 watt-hours/kilogram.
|Battery sealing structure, electrolyte circulation type battery cell frame, electrolyte circulation type battery cell stack, and electrolyte circulation type battery|
An easy-to-assemble battery sealing structure is provided. A cell frame includes a battery plate-like member (bipolar plate), a pair of frames for holding a peripheral portion of bipolar plate therebetween and pressing the peripheral portion from the front and the rear, and an annular packing made of an elastic material.
|Compositions comprising a prostaglandin for treating neuropsychiatric conditions|
The present invention relates to methods and compositions for the treatment of neuropsychiatric conditions (e.g., bipolar disorder) by administration of prostaglandin or prostaglandin derivatives (e.g., latanoprost) to a subject (e.g., a human).. .
|Low-voltage band-gap voltage reference circuit|
The present application discusses low voltage band-gap voltage reference circuit and methods. In an example the circuit can include a current mirror, an operational amplifier adopting an n-metal-oxide-semiconductor (nmos) input pair structure, a band-gap output circuit, an adaptive adjustment circuit; and two branches of bipolar junction transistor (bjt).
|Bandgap reference circuit|
A bandgap reference circuit including two sets of bipolar junction transistors (bjts). A first set of two or more bjts configured to electrically connect in a parallel arrangement.
|Bipolar transistor with embedded epitaxial external base region and method of forming the same|
The present invention discloses a bipolar transistor with an embedded epitaxial external base region, which is designed to solve the problem of the ted effect with the prior art structures. The bipolar transistor with an embedded epitaxial external base region of the present invention comprises at least a collector region, a base region and an external base region on the collector region, an emitter on the base region, and sidewalls at both sides of the emitter.
|Electronic device comprising rf-ldmos transistor having improved ruggedness|
The invention relates to an electronic device comprising an rf-ldmos transistor (1) and a protection circuit (2) for the rf-ldmos transistor. The protection circuit (2) comprises: i) an input terminal (ni) coupled to a drain terminal (drn) of the rf-ldmos transistor (1); ii) a clipping node (nc); iii) a clipping circuit (3) coupled to the clipping node (nc) for substantially keeping the voltage on the clipping node (nc) below a predefined reference voltage, wherein the predefined reference voltage is designed to be larger than the operation voltage on the drain terminal (drn) and lower than a trigger voltage of a parasitic bipolar transistor (100) that is inherently present in the rf-ldmos transistor; iv) a capacitance (ct) coupled between the clipping node (nc) and a further reference voltage terminal (gnd), and v) a rectifying element (d1, d2) connected with its anode terminal to the input terminal (ni) and with its cathode terminal to the clipping node (nc).