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Method for manufacturing corrosion resistant and conductive nano carbon coating layer and fuel cell bipolar plate…
Apparatus for transceiver signal isolation and voltage clamp and methods of forming the same
|| List of recent Bipolar-related patents
|Vessel sealer and divider for use with small trocars and cannulas|
An endoscopic bipolar forceps includes a housing and a shaft affixed to the housing. The shaft includes a longitudinal axis defined therethrough and a pair of jaw members attached to a distal end thereof.
|Quinoxaline derivative, and light emitting element, light emitting device, and electronic device using the quinoxaline derivative|
To provide a new bipolar organic compound. In particular, to provide a bipolar organic compound having excellent heat resistance and to provide a bipolar organic compound which is electrochemically stable.
|Method for manufacturing corrosion resistant and conductive nano carbon coating layer and fuel cell bipolar plate thereby using stainless steel substrate|
The present invention proposed manufacturing method of coating layers with good conductivity and corrosion resistance at high productivity comprising etching the oxide layer on the stainless steel substrate by plasma etching to activate the surface and prevent from decreasing it's conductivity, coating metal nitrides like crn or tin in nano size thickness on the etched surface and coating carbon layer at nano size thickness on top of it. According to the present invention, it is possible to produce manufacture fuel cell bipolar plate, electrode material and stainless steel with reinforced conductivity and corrosion resistance in mass..
|Apparatus for transceiver signal isolation and voltage clamp and methods of forming the same|
An apparatus for transceiver signal isolation and voltage clamp from transient electrical events includes a bi-directional protection device comprising a bipolar pnpnp device assembly, a first parasitic pnpn device assembly, and a second parasitic pnpn device assembly. The bipolar pnpnp device assembly includes an npn bi-directional bipolar transistor, a first pnp bipolar transistor, and a second pnp bipolar transistor, and is configured to receive a transient voltage signal through first and second pads.
|Methods and apparatus for esd protection circuits|
Methods and apparatus are disclosed for esd protection circuits. An esd protection circuit may comprise a lateral silicon controlled rectifier (scr) circuit and a lateral pnp bipolar junction transistor (bjt) circuit.
An electrosurgical forceps is provided with a shaft that extends from a housing of the electrosurgical forceps. An end effector assembly is operably coupled to a distal end of the shaft and includes a pair of first and second jaw members.
|Deuterium-enriched alkyl sulfonamides and uses thereof|
The present invention is concerned with deuterium-enriched sulfonamides of formula 1, their pharmaceutically acceptable salts and methods of use thereof for the treatment of anxiety disorders including, general anxiety disorder (gad), panic disorder (pd), post-traumatic stress disorder (ptsd), social phobia (sp), health anxiety (hypochondriasis), depression, major depressive disorders, unipolar depression, bipolar i depression disorder, bipolar ii depression disorder, treatment-resistant depression, single episodic and recurrent major depressive disorders, depression in the medically ill, attention deficit hyperactivity disorder (adhd), attention deficit disorder (add), obsessive-compulsive disorder (ocd), obsessive-compulsive personality disorder (ocpd), autism spectrum disorder (asd), schizophrenia, psychosis, epilepsy, seizures, hot flashes due to menopause, age-related macular degeneration (amd), premature ejaculation, male erectile dysfunction, sexual dysfunction, obesity, eating disorders, bulimia nervosa, anorexia nervosa, angina, migraine, pain, nociception, sleep disorders, insomnia, fibromyalgia, alcohol withdrawal, autism, rett's syndrome, cyclothymic disorder, neural injury, neurodegenerative diseases, parkinson's disease, parkinson's disease psychosis, huntington disease, alzheimer's disease, frontotemporal dementia, cognitive impairment associated with age-related dementia, alzheimer's disease, schizophrenia, psychosis, depression, pain or discomfort associated with surgery and pain or discomfort associated with medical illness.. .
|Method for fabricating complementary tunneling field effect transistor based on standard cmos ic process|
Disclosed herein is a method for fabricating a complementary tunneling field effect transistor based on a standard cmos ic process, which belongs to the field of logic devices and circuits of field effect transistors in ultra large scaled integrated (ulsi) circuits. In the method, an intrinsic channel and body region of a tfet are formed by means of complementary p-well and n-well masks in the standard cmos ic process to form a well doping, a channel doping and a threshold adjustment by implantation.
|Fully isolated ligbt and methods for forming the same|
A method includes growing an epitaxy semiconductor layer over a semiconductor substrate. The epitaxy semiconductor layer is of a first conductivity type.
|Fuel cell having a modular base active area|
A fuel cell stack includes a plurality of fuel cells arranged in a stack configuration extending along a z-axis, wherein each fuel cell includes a membrane electrode assembly interposed between a pair of bipolar plates, and each membrane electrode assembly has a total active area measured in an x-y plane that is generally perpendicular to the z-axis. Each bipolar plate includes a plurality of common passages extending generally parallel to the z-axis.
|System and method for cooling a fuel cell-powered vehicle|
A fuel cell system, including a plurality of bipolar plate assemblies, each assembly including a first plate and a second plate with an internal coolant flow path disposed therebetween, a flow path for a first reactant gas on a side of the first plate opposite the internal coolant flow path, and a flow path for a second reactant gas on a side of the second plate opposite the internal coolant flow path, and a cooling system configured to place coolant in thermal communication with the plurality of bipolar plate assemblies, wherein cycling pressure differentials between the internal coolant flow path and the external reactant gas flow paths cause expansion and contraction of a volume of coolant disposed within the bipolar plate assembly, thereby pumping coolant through the cooling system. A method of cooling a fuel cell-powered vehicle is also provided..
|Orally disintegrating tablet compositions of lamotrigine|
The compositions of the present invention composition comprise a therapeutically effective amount of particles comprising lamotrigine, in combination with granules comprising a disintegrant, and a sugar alcohol and/or a saccharide. These compositions are useful in treating epilepsy and bipolar disorder, particularly for patients with dysphagia, and to improve compliance with bipolar patients..
|Short circuit protection circuit and method for insulated gate bipolar transistor|
An assembly includes an insulated gate bipolar transistor (igbt), a gate driver and a short-circuit protection circuit. The gate driver is adapted to supply voltage to a gate terminal of the igbt.
|Trench isolation for bipolar junction transistors in bicmos technology|
Device structures, fabrication methods, and design structures for a bipolar junction transistor. A first isolation structure is formed in a substrate to define a boundary for a device region.
|Bipolar semiconductor switch and a manufacturing method therefor|
A bipolar semiconductor switch having a semiconductor body is provided. The semiconductor body includes a first p-type semiconductor region, a second p-type semiconductor region, and a first n-type semiconductor region forming a first pn-junction with the first p-type semiconductor region and a second pn-junction with the second p-type semiconductor region.
|Implantable electroacupuncture device and method for treating depression, bipolar disorder and anxiety|
An implantable electroacupuncture device (iead) treats depression, bipolar disorder or anxiety through application of stimulation pulses applied at acupoints gv20 and/or exhn3. The iead comprises an implantable, coin-sized, self-contained, leadless electroacupuncture device having at least two electrodes attached to an outside surface of its housing.
|Bipolar electrosurgical hand shears|
An apparatus comprises a first jaw, a second jaw, a first handle, and a second handle. The second jaw is pivotally coupled with the first jaw.
|Unsaturated nitrogen heterocyclic compounds useful as pde10 inhibitors|
As defined in the specification, compositions containing them, and processes for preparing such compounds. Provided herein also are methods of treating disorders or diseases treatable by inhibition of pde10, such as obesity, huntington's disease, non-insulin dependent diabetes, schizophrenia, bipolar disorder, obsessive-compulsive disorder, and the like..
|Forming structures on resistive substrates|
A substrate includes a first region having a first resistivity, for optimizing a field effect transistor, a second region having a second resistivity, for optimizing an npn subcollector of a bipolar transistor device and triple well, a third region having a third resistivity, with a high resistivity for a passive device, a fourth region, substantially without implantation, to provide low perimeter capacitance for devices.. .
|Production of multiple semiconductor devices using a semiconductor process|
In one general aspect, a method can include implanting a first dopant, simultaneously, in a portion of a laterally diffused metal oxide semiconductor (ldmos) device and in a portion of a resistor device included in a semiconductor device. The method can also include implanting a second dopant, simultaneously, in a portion of the ldmos device and in a portion of a bipolar junction transistor (bjt) device in the semiconductor device..
|Area-efficient high voltage bipolar-based esd protection targeting narrow design windows|
An area-efficient, high voltage, single polarity esd protection device (300) is provided which includes an p-type substrate (303); a first p-well (308-1) formed in the substrate and sized to contain n+ and p+ contact regions (310, 312) that are connected to a cathode terminal; a second, separate p-well (308-2) formed in the substrate and sized to contain only a p+ contact region (311) that is connected to an anode terminal; and an electrically floating n-type isolation structure (304, 306, 307-2) formed in the substrate to surround and separate the first and second semiconductor regions. When a positive voltage exceeding a triggering voltage level is applied to the cathode and anode terminals, the esd protection device triggers an inherent thyristor into a snap-back mode to provide a low impedance path through the structure for discharging the esd current..
|Method for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications|
A method and structures are provided for implementing deep trench enabled high current capable bipolar transistor for current switching and output driver applications. A deep oxygen implant is provided in a selected region of substrate.
|Insulated gate bipolar transistor|
Embodiments of the present invention provide an igbt, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the igbt is turned off. The igbt includes a cell region on a front surface, a terminal region surrounding the cell region, an igbt drift region of a first conductivity type, and an igbt collector region on a back surface.
Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands.
|Portable igbt arc welding machine|
A portable igbt (insulated gate bipolar transistor) of high reliability, compact size, and low cost includes a main circuit to which a control circuit and an auxiliary power supply circuit are connected. The main circuit includes, in sequence, an input rectifier filter circuit, an inverter circuit, a high-frequency primary transformer, and a secondary output rectifier circuit.
|Compliant bipolar micro device transfer head with silicon electrodes|
A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an soi substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate.
|Bipolar diode having an optical quantum structure absorber|
Therein, the layer is preferably deposited by a cvd or the like method. High efficiencies of above 30% were initially measured on small samples on silicon..
|Methods and compositions for treating schizophrenia|
The invention relates to methods and compositions for treating schizophrenia or bipolar disorder (in particular, mania) by using a combination of a synaptic vesicle protein 2a (sv2a) inhibitor and an antipsychotic or their pharmaceutically acceptable salts, hydrates, solvates, polymorphs thereof. In some embodiments, the methods and the compositions are for treating one or more positive and/or negative symptoms, as well as cognitive impairment, associated with schizophrenia or bipolar disorder (in particular, mania)..
|Current balance control for non-interleaved parallel bridge circuits in power converter|
Systems and methods for reducing current imbalance between parallel bridge circuits used in a power converter of a power generation system, such as a wind driven doubly fed induction generator (dfig) system, are provided. The power converter can include a plurality of bridge circuits coupled in parallel to increase the output power capability of the system.
|Systems and methods for driving a bipolar junction transistor by adjusting base current with time|
System and method for driving a bipolar junction transistor for a power converter. The system includes a current generator configured to output a drive current signal to a bipolar junction transistor to adjust a primary current flowing through a primary winding of a power converter.
There is disclosed a semiconductor device. The device comprises: a silicon layer; a tapered insulating layer formed on the silicon layer; and a plurality of bipolar cmos dmos device layers formed above the tapered insulating layer.
|Electrolyser and assembly comprising same, in particular for the production of h2 and o2|
The present invention relates to an electrolyser for the production of at least one chemical substance, such as hydrogen, oxygen, chlorine or hypochlorous acid, or sodium hydroxide, by electrolysis of pure water or of water containing at least one salt, base and/or acid such as nacl, h2so4, koh or naoh, comprising a stack of at least a first and a second consecutive electrolytic cells, each electrolytic cell (10) comprising; —an anode, —a cathode, —an ion exchange membrane (11) positioned between the anode and the cathode, the ion exchange membrane (11) of the first electrolytic cell and of the second electrolytic cell being separated by a bipolar electrode (15) constituting on the one hand, the anode of the first electrolytic cell and, on the other hand, the cathode of the second electrolytic cell.. .
|Electrodeionization apparatus for producing deionized water|
Provided is an electrodeionization apparatus for producing deionized water, capable of removing or reducing a biased flow of electric current in a deionization chamber. In the electrodeionization apparatus for producing deionized water, at least one deionization treatment unit including the deionization chamber and a pair of concentration chambers adjacent to both sides of the deionization chamber is disposed between a cathode and an anode.
|Directional mesh and associated systems|
Woven structures and associated systems for weaving such structures are disclosed. Some disclosed innovations pertain to braided structures, such as braided wire structures, with axially asymmetric woven structures (or “directional meshes”) being examples.
A bipolar forceps may include a first forceps arm having a first forceps arm aperture, a first forceps jaw, and a first forceps arm conductor tip; a second forceps arm having a first forceps arm aperture, a second forceps jaw, and a second forceps arm conductor tip; and an input conductor isolation mechanism having a first forceps arm housing and a second forceps arm housing. The first forceps arm may be disposed in the first forceps arm housing and the second forceps arm may be disposed in the second forceps arm housing.
The invention relates to a method of differentially diagnosing schizophrenia, bipolar disorder and major depressive disorder.. .
|Fuel cell limiting the phenomenon of corrosion|
A fuel cell includes three membrane-electrode assemblies. And first and second bipolar metal plates interposed between the membrane-electrode assemblies.
The disclosure provides a power converter and method for controlling same, comprising a plurality of switch elements, an inductive reactor, and at least two ports for the movement of electrical energy. Any energy-moving port may be made unipolar, bidirectional, bipolar, or bidirectionally bipolar.
|Bidirectional power conversion with fault-handling capability|
A power conversion system includes a unipolar bidirectional power converter with dc terminals and a first controller, and a bipolar bidirectional power converter with dc terminals connected in series with the dc terminals of the unipolar bidirectional power converter and a second controller. The first controller is operable to cause only a positive-valued dc voltage across the dc terminals.
An insulated gate bipolar transistor having a gate electrode (7) and an emitter electrode (9) is provided in a transistor region. A termination region is arranged around the transistor region.
|In-line vessel sealer and divider|
An endoscopic forceps includes a housing having a shaft attached thereto, the shaft including a pair of jaw members disposed at a distal end thereof. The forceps also includes a drive assembly disposed in the housing which moves the jaw members relative to one another from a first position wherein the jaw members are disposed in spaced relation relative to one another to a second position wherein the jaw members are closer to one another for manipulating tissue.
|Dual irrigating bipolar forceps|
Bipolar electrosurgical forceps are provided with dual irrigating tubes that deliver irrigating liquid to the opposed surfaces of the tips of the forceps to prevent the sticking of body tissue to the tips. To reduce the manufacturing costs of the forceps and enable the forceps to be single use, disposable forceps, each tube of the dual irrigating tools is a plastic tube adhered along one of the opposing surfaces of the pair of forceps arms.
|Exo-s-mecamylamine formulation and use in treatment|
A pharmaceutical composition includes a therapeutically effective amount of exo-s-mecamylamine or a pharmaceutically acceptable salt thereof, substantially free of exo-r-mecamylamine in combination with a pharmaceutically acceptable carrier. Preferably the amount is about 0.5 mg to about 20 mg.
|Combination treatments for bipolar disorders|
The invention relates generally to novel compositions and methods comprising a scyllo-inositol compound and one or both of valproic acid compound and lamotrigine. The compositions and methods provide beneficial effects in the treatment of bipolar disorders..
|Bicmos gate driver for class-s radio frequency power amplifier|
The invention may be embodied in a resynchronizing, push-pull drive circuit for driving the gate electrodes of a digital class-s radio frequency power amplifier (rf-pa). A binary bitstream received from a bitstream generator, such as a sigma-delta modulator, viterbi-based optimal-bit-pattern modulator sigma-delta, or other suitable modulator, is resynchronized to a low-jitter master clock, then converted to fast-rise, high-swing complementary digital signals to drive the gates of the class-s rf-pa.
|Bipolar compound and organic electroluminescent device employing the same|
Ra, rb, and rc are independently selected from a group consisting of a hydrogen, a halo, a cyano, a trifluoromethyl, an amino, a c1-c10 alkyl, a c2-c10 alkenyl, a c2-c10 alkynyl, a c3-c20 cycloalkyl, a c3-c20 cycloalkenyl, a c1-c20 heterocyclic alkyl, a c1-c20 hetercyclic alkenyl, an aryl, and a heteroaryl groups.. .
|Vertical bipolar transistor|
The disclosure relates to an integrated circuit comprising a transistor comprising first and second conduction terminals and a control terminal. The integrated circuit further comprises a stack of a first dielectric layer, a conductive layer, and a second dielectric layer, the first conduction terminal comprising a first semiconductor region formed in the first dielectric layer, the control terminal comprising a second semiconductor region formed in the conductive layer, and the second conduction terminal comprising a third semiconductor region formed in the second dielectric layer..
A bipolar sphincterotome may include an elongate tubular member, a cutting wire, and a return path. The return path may include a conductive ink portion disposed on an outer surface at a distal portion of the tubular member.
|Bipolar electrosurgical device|
A bipolar electrosurgical device is disclosed. The bipolar electrosurgical device includes a handle having a shaft and a distal end.
|Methods for forming bipolar transistors|
Methods are provided for forming a device that includes merged vertical and lateral transistors with collector regions of a first conductivity type between upper and lower base regions of opposite conductivity type that are ohmically coupled via intermediate regions of the same conductivity type and to the base contact. The emitter is provided in the upper base region and the collector contact is provided in outlying sinker regions extending to the thin collector regions and an underlying buried layer.
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Bipolar topics: Bipolar Transistor, Semiconductor, Transistors, Semiconductor Material, Bridge Rectifier, Semiconductor Switch, Microprocessor, Solid Electrolyte, Random Access, Memory Cell, Memory Cells, Electrolyte, Electrodialysis, Dialysis System, Crystallin
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